The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors

PubMed Central

Lutz, Gerhard; Porro, Matteo; Aschauer, Stefan; Wölfel, Stefan; Strüder, Lothar

2016-01-01

Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell. PMID:27136549

QLog Solar-Cell Mode Photodiode Logarithmic CMOS Pixel Using Charge Compression and Readout †

PubMed Central

Ni, Yang

2018-01-01

In this paper, we present a new logarithmic pixel design currently under development at New Imaging Technologies SA (NIT). This new logarithmic pixel design uses charge domain logarithmic signal compression and charge-transfer-based signal readout. This structure gives a linear response in low light conditions and logarithmic response in high light conditions. The charge transfer readout efficiently suppresses the reset (KTC) noise by using true correlated double sampling (CDS) in low light conditions. In high light conditions, thanks to charge domain logarithmic compression, it has been demonstrated that 3000 electrons should be enough to cover a 120 dB dynamic range with a mobile phone camera-like signal-to-noise ratio (SNR) over the whole dynamic range. This low electron count permits the use of ultra-small floating diffusion capacitance (sub-fF) without charge overflow. The resulting large conversion gain permits a single photon detection capability with a wide dynamic range without a complex sensor/system design. A first prototype sensor with 320 × 240 pixels has been implemented to validate this charge domain logarithmic pixel concept and modeling. The first experimental results validate the logarithmic charge compression theory and the low readout noise due to the charge-transfer-based readout. PMID:29443903

QLog Solar-Cell Mode Photodiode Logarithmic CMOS Pixel Using Charge Compression and Readout.

PubMed

Ni, Yang

2018-02-14

In this paper, we present a new logarithmic pixel design currently under development at New Imaging Technologies SA (NIT). This new logarithmic pixel design uses charge domain logarithmic signal compression and charge-transfer-based signal readout. This structure gives a linear response in low light conditions and logarithmic response in high light conditions. The charge transfer readout efficiently suppresses the reset (KTC) noise by using true correlated double sampling (CDS) in low light conditions. In high light conditions, thanks to charge domain logarithmic compression, it has been demonstrated that 3000 electrons should be enough to cover a 120 dB dynamic range with a mobile phone camera-like signal-to-noise ratio (SNR) over the whole dynamic range. This low electron count permits the use of ultra-small floating diffusion capacitance (sub-fF) without charge overflow. The resulting large conversion gain permits a single photon detection capability with a wide dynamic range without a complex sensor/system design. A first prototype sensor with 320 × 240 pixels has been implemented to validate this charge domain logarithmic pixel concept and modeling. The first experimental results validate the logarithmic charge compression theory and the low readout noise due to the charge-transfer-based readout.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Becker, Julian; Tate, Mark W.; Shanks, Katherine S.

Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we describe the hybridization of CdTe sensors to two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame,more » in-pixel storage elements with framing periods <150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128×128 pixel array with (150 µm){sup 2} pixels.« less

Integrated readout electronics for Belle II pixel detector

NASA Astrophysics Data System (ADS)

Blanco, R.; Leys, R.; Perić, I.

2018-03-01

This paper describes the readout components for Belle II that have been designed as integrated circuits. The ICs are connected to DEPFET sensor by bump bonding. Three types of ICs have been developed: SWITCHER for pixel matrix control, DCD for readout and digitizing of sensor signals and DHP for digital data processing. The ICs are radiation tolerant and use several novel features, such as the multiple-input differential amplifiers and the fast and radiation hard high-voltage drivers. SWITCHER and DCD have been developed at University of Heidelberg, Karlsruhe Institute of Technology (KIT) and DHP at Bonn University. The IC-development started in 2009 and was accomplished in 2016 with the submissions of final designs. The final ICs for Belle II pixel detector and the related measurement results will be presented in this contribution.

Room temperature 1040fps, 1 megapixel photon-counting image sensor with 1.1um pixel pitch

NASA Astrophysics Data System (ADS)

Masoodian, S.; Ma, J.; Starkey, D.; Wang, T. J.; Yamashita, Y.; Fossum, E. R.

2017-05-01

A 1Mjot single-bit quanta image sensor (QIS) implemented in a stacked backside-illuminated (BSI) process is presented. This is the first work to report a megapixel photon-counting CMOS-type image sensor to the best of our knowledge. A QIS with 1.1μm pitch tapered-pump-gate jots is implemented with cluster-parallel readout, where each cluster of jots is associated with its own dedicated readout electronics stacked under the cluster. Power dissipation is reduced with this cluster readout because of the reduced column bus parasitic capacitance, which is important for the development of 1Gjot arrays. The QIS functions at 1040fps with binary readout and dissipates only 17.6mW, including I/O pads. The readout signal chain uses a fully differential charge-transfer amplifier (CTA) gain stage before a 1b-ADC to achieve an energy/bit FOM of 16.1pJ/b and 6.9pJ/b for the whole sensor and gain stage+ADC, respectively. Analog outputs with on-chip gain are implemented for pixel characterization purposes.

Pixel electronic noise as a function of position in an active matrix flat panel imaging array

NASA Astrophysics Data System (ADS)

Yazdandoost, Mohammad Y.; Wu, Dali; Karim, Karim S.

2010-04-01

We present an analysis of output referred pixel electronic noise as a function of position in the active matrix array for both active and passive pixel architectures. Three different noise sources for Active Pixel Sensor (APS) arrays are considered: readout period noise, reset period noise and leakage current noise of the reset TFT during readout. For the state-of-the-art Passive Pixel Sensor (PPS) array, the readout noise of the TFT switch is considered. Measured noise results are obtained by modeling the array connections with RC ladders on a small in-house fabricated prototype. The results indicate that the pixels in the rows located in the middle part of the array have less random electronic noise at the output of the off-panel charge amplifier compared to the ones in rows at the two edges of the array. These results can help optimize for clearer images as well as help define the region-of-interest with the best signal-to-noise ratio in an active matrix digital flat panel imaging array.

New results on diamond pixel sensors using ATLAS frontend electronics

NASA Astrophysics Data System (ADS)

Keil, M.; Adam, W.; Berdermann, E.; Bergonzo, P.; de Boer, W.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Dulinski, W.; Doroshenko, J.; Doucet, M.; van Eijk, B.; Fallou, A.; Fischer, P.; Fizzotti, F.; Kania, D.; Gan, K. K.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Koeth, T.; Krammer, M.; Logiudice, A.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L. S.; Pernicka, M.; Perera, L.; Riester, J. L.; Roe, S.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Trischuk, W.; Tromson, D.; Vittone, E.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

2003-03-01

Diamond is a promising sensor material for future collider experiments due to its radiation hardness. Diamond pixel sensors have been bump bonded to an ATLAS pixel readout chip using PbSn solder bumps. Single chip devices have been characterised by lab measurements and in a high-energy pion beam at CERN. Results on charge collection, spatial resolution, efficiency and the charge carrier lifetime are presented.

An asynchronous data-driven readout prototype for CEPC vertex detector

NASA Astrophysics Data System (ADS)

Yang, Ping; Sun, Xiangming; Huang, Guangming; Xiao, Le; Gao, Chaosong; Huang, Xing; Zhou, Wei; Ren, Weiping; Li, Yashu; Liu, Jianchao; You, Bihui; Zhang, Li

2017-12-01

The Circular Electron Positron Collider (CEPC) is proposed as a Higgs boson and/or Z boson factory for high-precision measurements on the Higgs boson. The precision of secondary vertex impact parameter plays an important role in such measurements which typically rely on flavor-tagging. Thus silicon CMOS Pixel Sensors (CPS) are the most promising technology candidate for a CEPC vertex detector, which can most likely feature a high position resolution, a low power consumption and a fast readout simultaneously. For the R&D of the CEPC vertex detector, we have developed a prototype MIC4 in the Towerjazz 180 nm CMOS Image Sensor (CIS) process. We have proposed and implemented a new architecture of asynchronous zero-suppression data-driven readout inside the matrix combined with a binary front-end inside the pixel. The matrix contains 128 rows and 64 columns with a small pixel pitch of 25 μm. The readout architecture has implemented the traditional OR-gate chain inside a super pixel combined with a priority arbiter tree between the super pixels, only reading out relevant pixels. The MIC4 architecture will be introduced in more detail in this paper. It will be taped out in May and will be characterized when the chip comes back.

Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors.

PubMed

Ge, Xiaoliang; Theuwissen, Albert J P

2018-02-27

This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique has been proposed to provide a way to efficiently embed a tunable conversion gain along the read-out path. Such readout topology, however, operates in a non-stationery large-signal behavior, and the statistical properties of its temporal noise are a function of time. Conventional noise analysis methods for CMOS image sensors are based on steady-state signal models, and therefore cannot be readily applied for Gm-cell-based pixels. In this paper, we develop analysis models for both thermal noise and flicker noise in Gm-cell-based pixels by employing the time-domain linear analysis approach and the non-stationary noise analysis theory, which help to quantitatively evaluate the temporal noise characteristic of Gm-cell-based pixels. Both models were numerically computed in MATLAB using design parameters of a prototype chip, and compared with both simulation and experimental results. The good agreement between the theoretical and measurement results verifies the effectiveness of the proposed noise analysis models.

Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors †

PubMed Central

Theuwissen, Albert J. P.

2018-01-01

This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique has been proposed to provide a way to efficiently embed a tunable conversion gain along the read-out path. Such readout topology, however, operates in a non-stationery large-signal behavior, and the statistical properties of its temporal noise are a function of time. Conventional noise analysis methods for CMOS image sensors are based on steady-state signal models, and therefore cannot be readily applied for Gm-cell-based pixels. In this paper, we develop analysis models for both thermal noise and flicker noise in Gm-cell-based pixels by employing the time-domain linear analysis approach and the non-stationary noise analysis theory, which help to quantitatively evaluate the temporal noise characteristic of Gm-cell-based pixels. Both models were numerically computed in MATLAB using design parameters of a prototype chip, and compared with both simulation and experimental results. The good agreement between the theoretical and measurement results verifies the effectiveness of the proposed noise analysis models. PMID:29495496

Report of the sensor readout electronics panel

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Carson, J.; Kleinhans, W.; Kosonocky, W.; Kozlowski, L.; Pecsalski, A.; Silver, A.; Spieler, H.; Woolaway, J.

1991-01-01

The findings of the Sensor Readout Electronics Panel are summarized in regard to technology assessment and recommended development plans. In addition to two specific readout issues, cryogenic readouts and sub-electron noise, the panel considered three advanced technology areas that impact the ability to achieve large format sensor arrays. These are mega-pixel focal plane packaging issues, focal plane to data processing module interfaces, and event driven readout architectures. Development in each of these five areas was judged to have significant impact in enabling the sensor performance desired for the Astrotech 21 mission set. Other readout issues, such as focal plane signal processing or other high volume data acquisition applications important for Eos-type mapping, were determined not to be relevant for astrophysics science goals.

CVD diamond pixel detectors for LHC experiments

NASA Astrophysics Data System (ADS)

Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A. M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J. C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N.; RD42 Collaboration

1999-08-01

This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described.

Large Format CMOS-based Detectors for Diffraction Studies

NASA Astrophysics Data System (ADS)

Thompson, A. C.; Nix, J. C.; Achterkirchen, T. G.; Westbrook, E. M.

2013-03-01

Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at reasonable cost.

Germanium ``hexa'' detector: production and testing

NASA Astrophysics Data System (ADS)

Sarajlić, M.; Pennicard, D.; Smoljanin, S.; Hirsemann, H.; Struth, B.; Fritzsch, T.; Rothermund, M.; Zuvic, M.; Lampert, M. O.; Askar, M.; Graafsma, H.

2017-01-01

Here we present new result on the testing of a Germanium sensor for X-ray radiation. The system is made of 3 × 2 Medipix3RX chips, bump-bonded to a monolithic sensor, and is called ``hexa''. Its dimensions are 45 × 30 mm2 and the sensor thickness was 1.5 mm. The total number of the pixels is 393216 in the matrix 768 × 512 with pixel pitch 55 μ m. Medipix3RX read-out chip provides photon counting read-out with single photon sensitivity. The sensor is cooled to -126°C and noise levels together with flat field response are measured. For -200 V polarization bias, leakage current was 4.4 mA (3.2 μ A/mm2). Due to higher leakage around 2.5% of all pixels stay non-responsive. More than 99% of all pixels are bump bonded correctly. In this paper we present the experimental set-up, threshold equalization procedure, image acquisition and the technique for bump bond quality estimate.

Design and Optimization of Multi-Pixel Transition-Edge Sensors for X-Ray Astronomy Applications

NASA Technical Reports Server (NTRS)

Smith, Stephen J.; Adams, Joseph S.; Bandler, Simon R.; Chervenak, James A.; Datesman, Aaron Michael; Eckart, Megan E.; Ewin, Audrey J.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.;

Improved charge injection device and a focal plane interface electronics board for stellar tracking

NASA Technical Reports Server (NTRS)

Michon, G. J.; Burke, H. K.

1984-01-01

An improved Charge Injection Device (CID) stellar tracking sensor and an operating sensor in a control/readout electronics board were developed. The sensor consists of a shift register scanned, 256x256 CID array organized for readout of 4x4 subarrays. The 4x4 subarrays can be positioned anywhere within the 256x256 array with a 2 pixel resolution. This allows continuous tracking of a number of stars simultaneously since nine pixels (3x3) centered on any star can always be read out. Organization and operation of this sensor and the improvements in design and semiconductor processing are described. A hermetic package incorporating an internal thermoelectric cooler assembled using low temperature solders was developed. The electronics board, which contains the sensor drivers, amplifiers, sample hold circuits, multiplexer, analog to digital converter, and the sensor temperature control circuits, is also described. Packaged sensors were evaluated for readout efficiency, spectral quantum efficiency, temporal noise, fixed pattern noise, and dark current. Eight sensors along with two tracker electronics boards were completed, evaluated, and delivered.

Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Pain, Bedabrata

2005-01-01

A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would be fabricated separately.

Low noise WDR ROIC for InGaAs SWIR image sensor

NASA Astrophysics Data System (ADS)

Ni, Yang

2017-11-01

Hybridized image sensors are actually the only solution for image sensing beyond the spectral response of silicon devices. By hybridization, we can combine the best sensing material and photo-detector design with high performance CMOS readout circuitry. In the infrared band, we are facing typically 2 configurations: high background situation and low background situation. The performance of high background sensors are conditioned mainly by the integration capacity in each pixel which is the case for mid-wave and long-wave infrared detectors. For low background situation, the detector's performance is mainly limited by the pixel's noise performance which is conditioned by dark signal and readout noise. In the case of reflection based imaging condition, the pixel's dynamic range is also an important parameter. This is the case for SWIR band imaging. We are particularly interested by InGaAs based SWIR image sensors.

Development of Kilo-Pixel Arrays of Transition-Edge Sensors for X-Ray Spectroscopy

NASA Technical Reports Server (NTRS)

Adams, J. S.; Bandler, S. R.; Busch, S. E.; Chervenak, J. A.; Chiao, M. P.; Eckart, M. E.; Ewin, A. J.; Finkbeiner, F. M.; Kelley, R. L.; Kelly, D. P.;

Development of n-in-p pixel modules for the ATLAS upgrade at HL-LHC

NASA Astrophysics Data System (ADS)

Macchiolo, A.; Nisius, R.; Savic, N.; Terzo, S.

2016-09-01

Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100-200 μm thick sensors, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements are reported for devices before and after irradiation up to a fluence of 14 ×1015 neq /cm2 . The charge collection and tracking efficiency of the different sensor thicknesses are compared. The outlook for future planar pixel sensor production is discussed, with a focus on sensor design with the pixel pitches (50×50 and 25×100 μm2) foreseen for the RD53 Collaboration read-out chip in 65 nm CMOS technology. An optimization of the biasing structures in the pixel cells is required to avoid the hit efficiency loss presently observed in the punch-through region after irradiation. For this purpose the performance of different layouts have been compared in FE-I4 compatible sensors at various fluence levels by using beam test data. Highly segmented sensors will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. In order to reproduce the performance of 50×50 μm2 pixels at high pseudo-rapidity values, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle (80°) with respect to the short pixel direction. Results on cluster shapes, charge collection and hit efficiency will be shown.

Macro Pixel ASIC (MPA): the readout ASIC for the pixel-strip (PS) module of the CMS outer tracker at HL-LHC

NASA Astrophysics Data System (ADS)

Ceresa, D.; Marchioro, A.; Kloukinas, K.; Kaplon, J.; Bialas, W.; Re, V.; Traversi, G.; Gaioni, L.; Ratti, L.

2014-11-01

The CMS tracker at HL-LHC is required to provide prompt information on particles with high transverse momentum to the central Level 1 trigger. For this purpose, the innermost part of the outer tracker is based on a combination of a pixelated sensor with a short strip sensor, the so-called Pixel-Strip module (PS). The readout of these sensors is carried out by distinct ASICs, the Strip Sensor ASIC (SSA), for the strip layer, and the Macro Pixel ASIC (MPA) for the pixel layer. The processing of the data directly on the front-end module represents a design challenge due to the large data volume (30720 pixels and 1920 strips per module) and the limited power budget. This is the reason why several studies have been carried out to find the best compromise between ASICs performance and power consumption. This paper describes the current status of the MPA ASIC development where the logic for generating prompt information on particles with high transverse momentum is implemented. An overview of the readout method is presented with particular attention on the cluster reduction, position encoding and momentum discrimination logic. Concerning the architectural studies, a software test bench capable of reading physics Monte-Carlo generated events has been developed and used to validate the MPA design and to evaluate the MPA performance. The MPA-Light is scheduled to be submitted for fabrication this year and will include the full analog functions and a part of the digital logic of the final version in order to qualify the chosen VLSI technology for the analog front-end, the module assembly and the low voltage digital supply.

On Certain New Methodology for Reducing Sensor and Readout Electronics Circuitry Noise in Digital Domain

NASA Technical Reports Server (NTRS)

Kizhner, Semion; Miko, Joseph; Bradley, Damon; Heinzen, Katherine

2008-01-01

NASA Hubble Space Telescope (HST) and upcoming cosmology science missions carry instruments with multiple focal planes populated with many large sensor detector arrays. These sensors are passively cooled to low temperatures for low-level light (L3) and near-infrared (NIR) signal detection, and the sensor readout electronics circuitry must perform at extremely low noise levels to enable new required science measurements. Because we are at the technological edge of enhanced performance for sensors and readout electronics circuitry, as determined by thermal noise level at given temperature in analog domain, we must find new ways of further compensating for the noise in the signal digital domain. To facilitate this new approach, state-of-the-art sensors are augmented at their array hardware boundaries by non-illuminated reference pixels, which can be used to reduce noise attributed to sensors. There are a few proposed methodologies of processing in the digital domain the information carried by reference pixels, as employed by the Hubble Space Telescope and the James Webb Space Telescope Projects. These methods involve using spatial and temporal statistical parameters derived from boundary reference pixel information to enhance the active (non-reference) pixel signals. To make a step beyond this heritage methodology, we apply the NASA-developed technology known as the Hilbert- Huang Transform Data Processing System (HHT-DPS) for reference pixel information processing and its utilization in reconfigurable hardware on-board a spaceflight instrument or post-processing on the ground. The methodology examines signal processing for a 2-D domain, in which high-variance components of the thermal noise are carried by both active and reference pixels, similar to that in processing of low-voltage differential signals and subtraction of a single analog reference pixel from all active pixels on the sensor. Heritage methods using the aforementioned statistical parameters in the digital domain (such as statistical averaging of the reference pixels themselves) zeroes out the high-variance components, and the counterpart components in the active pixels remain uncorrected. This paper describes how the new methodology was demonstrated through analysis of fast-varying noise components using the Hilbert-Huang Transform Data Processing System tool (HHT-DPS) developed at NASA and the high-level programming language MATLAB (Trademark of MathWorks Inc.), as well as alternative methods for correcting for the high-variance noise component, using an HgCdTe sensor data. The NASA Hubble Space Telescope data post-processing, as well as future deep-space cosmology projects on-board instrument data processing from all the sensor channels, would benefit from this effort.

Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Cavicchioli, C.; Chalmet, P. L.; Giubilato, P.; Hillemanns, H.; Junique, A.; Kugathasan, T.; Mager, M.; Marin Tobon, C. A.; Martinengo, P.; Mattiazzo, S.; Mugnier, H.; Musa, L.; Pantano, D.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Van Hoorne, J. W.; Yang, P.

2014-11-01

Within the R&D activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget ( 0.3 %X0 in total for each inner layer) and higher granularity ( 20 μm × 20 μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity (ρ > 1 kΩ cm) and 18 μm thick epitaxial layer. The chip is organized in two sub-matrices with different pixel pitches (20 μm and 30 μm), each of them containing several pixel designs. The collection electrode size and shape, as well as the distance between the electrode and the surrounding electronics, are varied; the chip also offers the possibility to decouple the charge integration time from the readout time, and to change the sensor bias. The charge collection properties of the different pixel variants implemented in Explorer0 have been studied using a 55Fe X-ray source and 1-5 GeV/c electrons and positrons. The sensor capacitance has been estimated, and the effect of the sensor bias has also been examined in detail. A second version of the Explorer0 chip (called Explorer1) has been submitted for production in March 2013, together with a novel circuit with in-pixel discrimination and a sparsified readout. Results from these submissions are also presented.

JPL CMOS Active Pixel Sensor Technology

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

A new 9T global shutter pixel with CDS technique

NASA Astrophysics Data System (ADS)

Liu, Yang; Ma, Cheng; Zhou, Quan; Wang, Xinyang

2015-04-01

Benefiting from motion blur free, Global shutter pixel is very widely used in the design of CMOS image sensors for high speed applications such as motion vision, scientifically inspection, etc. In global shutter sensors, all pixel signal information needs to be stored in the pixel first and then waiting for readout. For higher frame rate, we need very fast operation of the pixel array. There are basically two ways for the in pixel signal storage, one is in charge domain, such as the one shown in [1], this needs complicated process during the pixel fabrication. The other one is in voltage domain, one example is the one in [2], this pixel is based on the 4T PPD technology and normally the driving of the high capacitive transfer gate limits the speed of the array operation. In this paper we report a new 9T global shutter pixel based on 3-T partially pinned photodiode (PPPD) technology. It incorporates three in-pixel storage capacitors allowing for correlated double sampling (CDS) and pipeline operation of the array (pixel exposure during the readout of the array). Only two control pulses are needed for all the pixels at the end of exposure which allows high speed exposure control.

Data Processing for a High Resolution Preclinical PET Detector Based on Philips DPC Digital SiPMs

NASA Astrophysics Data System (ADS)

Schug, David; Wehner, Jakob; Goldschmidt, Benjamin; Lerche, Christoph; Dueppenbecker, Peter Michael; Hallen, Patrick; Weissler, Bjoern; Gebhardt, Pierre; Kiessling, Fabian; Schulz, Volkmar

2015-06-01

In positron emission tomography (PET) systems, light sharing techniques are commonly used to readout scintillator arrays consisting of scintillation elements, which are smaller than the optical sensors. The scintillating element is then identified evaluating the signal heights in the readout channels using statistical algorithms, the center of gravity (COG) algorithm being the simplest and mostly used one. We propose a COG algorithm with a fixed number of input channels in order to guarantee a stable calculation of the position. The algorithm is implemented and tested with the raw detector data obtained with the Hyperion-II D preclinical PET insert which uses Philips Digital Photon Counting's (PDPC) digitial SiPMs. The gamma detectors use LYSO scintillator arrays with 30 ×30 crystals of 1 ×1 ×12 mm3 in size coupled to 4 ×4 PDPC DPC 3200-22 sensors (DPC) via a 2-mm-thick light guide. These self-triggering sensors are made up of 2 ×2 pixels resulting in a total of 64 readout channels. We restrict the COG calculation to a main pixel, which captures most of the scintillation light from a crystal, and its (direct and diagonal) neighboring pixels and reject single events in which this data is not fully available. This results in stable COG positions for a crystal element and enables high spatial image resolution. Due to the sensor layout, for some crystals it is very likely that a single diagonal neighbor pixel is missing as a result of the low light level on the corresponding DPC. This leads to a loss of sensitivity, if these events are rejected. An enhancement of the COG algorithm is proposed which handles the potentially missing pixel separately both for the crystal identification and the energy calculation. Using this advancement, we show that the sensitivity of the Hyperion-II D insert using the described scintillator configuration can be improved by 20-100% for practical useful readout thresholds of a single DPC pixel ranging from 17-52 photons. Furthermore, we show that the energy resolution of the scanner is superior for all readout thresholds if singles with a single missing pixel are accepted and correctly handled compared to the COG method only accepting singles with all neighbors present by 0-1.6% (relative difference). The presented methods can not only be applied to gamma detectors employing DPC sensors, but can be generalized to other similarly structured and self-triggering detectors, using light sharing techniques, as well.

Design and standalone characterisation of a capacitively coupled HV-CMOS sensor chip for the CLIC vertex detector

NASA Astrophysics Data System (ADS)

Kremastiotis, I.; Ballabriga, R.; Campbell, M.; Dannheim, D.; Fiergolski, A.; Hynds, D.; Kulis, S.; Peric, I.

2017-09-01

The concept of capacitive coupling between sensors and readout chips is under study for the vertex detector at the proposed high-energy CLIC electron positron collider. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is an active High-Voltage CMOS sensor, designed to be capacitively coupled to the CLICpix2 readout chip. The chip is implemented in a commercial 180 nm HV-CMOS process and contains a matrix of 128×128 square pixels with 25μm pitch. First prototypes have been produced with a standard resistivity of ~20 Ωcm for the substrate and tested in standalone mode. The results show a rise time of ~20 ns, charge gain of 190 mV/ke- and ~40 e- RMS noise for a power consumption of 4.8μW/pixel. The main design aspects, as well as standalone measurement results, are presented.

High-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array

NASA Astrophysics Data System (ADS)

Guss, Paul; Rabin, Michael; Croce, Mark; Hoteling, Nathan; Schwellenbach, David; Kruschwitz, Craig; Mocko, Veronika; Mukhopadhyay, Sanjoy

2017-09-01

We demonstrate very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor (TES) array. The readout circuit consists of superconducting microwave resonators coupled to radio frequency superconducting-quantum-interference devices (RF-SQUIDs) and transduces changes in input current to changes in phase of a microwave signal. We used a flux-ramp modulation to linearize the response and avoid low-frequency noise. The result is a very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array. We performed and validated a small-scale demonstration and test of all the components of our concept system, which encompassed microcalorimetry, microwave multiplexing, RF-SQUIDs, and software-defined radio (SDR). We shall display data we acquired in the first simultaneous combination of all key innovations in a 4-pixel demonstration, including microcalorimetry, microwave multiplexing, RF-SQUIDs, and SDR. We present the energy spectrum of a gadolinium-153 (153Gd) source we measured using our 4-pixel TES array and the RF-SQUID multiplexer. For each pixel, one can observe the two 97.4 and 103.2 keV photopeaks. We measured the 153Gd photon source with an achieved energy resolution of 70 eV, full width half maximum (FWHM) at 100 keV, and an equivalent readout system noise of 90 pA/pHz at the TES. This demonstration establishes a path for the readout of cryogenic x-ray and gamma ray sensor arrays with more elements and spectral resolving powers. We believe this project has improved capabilities and substantively advanced the science useful for missions such as nuclear forensics, emergency response, and treaty verification through the explored TES developments.

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Pain, B.; Norton, T. J.; Haas, P.; Fisher, Richard R. (Technical Monitor)

2001-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution for the readout while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest or by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Pain, Bedabrata; Norton, Timothy J.; Haas, J. Patrick; Oegerle, William R. (Technical Monitor)

2002-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest of by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors.

PubMed

Kawahito, Shoji; Seo, Min-Woong

2016-11-06

This paper discusses the noise reduction effect of multiple-sampling-based signal readout circuits for implementing ultra-low-noise image sensors. The correlated multiple sampling (CMS) technique has recently become an important technology for high-gain column readout circuits in low-noise CMOS image sensors (CISs). This paper reveals how the column CMS circuits, together with a pixel having a high-conversion-gain charge detector and low-noise transistor, realizes deep sub-electron read noise levels based on the analysis of noise components in the signal readout chain from a pixel to the column analog-to-digital converter (ADC). The noise measurement results of experimental CISs are compared with the noise analysis and the effect of noise reduction to the sampling number is discussed at the deep sub-electron level. Images taken with three CMS gains of two, 16, and 128 show distinct advantage of image contrast for the gain of 128 (noise(median): 0.29 e - rms ) when compared with the CMS gain of two (2.4 e - rms ), or 16 (1.1 e - rms ).

Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors

PubMed Central

Kawahito, Shoji; Seo, Min-Woong

2016-01-01

This paper discusses the noise reduction effect of multiple-sampling-based signal readout circuits for implementing ultra-low-noise image sensors. The correlated multiple sampling (CMS) technique has recently become an important technology for high-gain column readout circuits in low-noise CMOS image sensors (CISs). This paper reveals how the column CMS circuits, together with a pixel having a high-conversion-gain charge detector and low-noise transistor, realizes deep sub-electron read noise levels based on the analysis of noise components in the signal readout chain from a pixel to the column analog-to-digital converter (ADC). The noise measurement results of experimental CISs are compared with the noise analysis and the effect of noise reduction to the sampling number is discussed at the deep sub-electron level. Images taken with three CMS gains of two, 16, and 128 show distinct advantage of image contrast for the gain of 128 (noise(median): 0.29 e−rms) when compared with the CMS gain of two (2.4 e−rms), or 16 (1.1 e−rms). PMID:27827972

Progress on the FDM Development at SRON: Toward 160 Pixels

NASA Astrophysics Data System (ADS)

den Hartog, R. H.; Bruijn, M. P.; Clenet, A.; Gottardi, L.; Hijmering, R.; Jackson, B. D.; van der Kuur, J.; van Leeuwen, B. J.; van der Linden, A. J.; van Loon, D.; Nieuwenhuizen, A.; Ridder, M.; van Winden, P.

2014-08-01

SRON is developing the electronic read-out for arrays of transition edge sensors using frequency domain multiplexing in combination with base-band feedback. The astronomical applications of this system are the read-out of soft X-ray micro-calorimeters in a potential instrument on the European X-ray mission-under-study Athena+ and far-IR bolometers for the Safari instrument on the Japanese mission SPICA. In this paper we demonstrate the simultaneous read-out of 38 bolometer pixels at a 12 aW/Hz dark NEP level. The stability of the read-out is assessed over 400 s. time spans. Although some 1/f noise is present, there are several bolometers for which 1/f-free read-out can be demonstrated.

A time-resolved image sensor for tubeless streak cameras

NASA Astrophysics Data System (ADS)

Yasutomi, Keita; Han, SangMan; Seo, Min-Woong; Takasawa, Taishi; Kagawa, Keiichiro; Kawahito, Shoji

2014-03-01

This paper presents a time-resolved CMOS image sensor with draining-only modulation (DOM) pixels for tube-less streak cameras. Although the conventional streak camera has high time resolution, the device requires high voltage and bulky system due to the structure with a vacuum tube. The proposed time-resolved imager with a simple optics realize a streak camera without any vacuum tubes. The proposed image sensor has DOM pixels, a delay-based pulse generator, and a readout circuitry. The delay-based pulse generator in combination with an in-pixel logic allows us to create and to provide a short gating clock to the pixel array. A prototype time-resolved CMOS image sensor with the proposed pixel is designed and implemented using 0.11um CMOS image sensor technology. The image array has 30(Vertical) x 128(Memory length) pixels with the pixel pitch of 22.4um. .

ALICE inner tracking system readout electronics prototype testing with the CERN "Giga Bit Transceiver''

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schambach, Joachim; Rossewij, M. J.; Sielewicz, K. M.

The ALICE Collaboration is preparing a major detector upgrade for the LHC Run 3, which includes the construction of a new silicon pixel based Inner Tracking System (ITS). The ITS readout system consists of 192 readout boards to control the sensors and their power system, receive triggers, and deliver sensor data to the DAQ. To prototype various aspects of this readout system, an FPGA based carrier board and an associated FMC daughter card containing the CERN Gigabit Transceiver (GBT) chipset have been developed. Furthermore, this contribution describes laboratory and radiation testing results with this prototype board set.

ALICE inner tracking system readout electronics prototype testing with the CERN "Giga Bit Transceiver''

DOE PAGES

Schambach, Joachim; Rossewij, M. J.; Sielewicz, K. M.; ...

2016-12-28

The ALICE Collaboration is preparing a major detector upgrade for the LHC Run 3, which includes the construction of a new silicon pixel based Inner Tracking System (ITS). The ITS readout system consists of 192 readout boards to control the sensors and their power system, receive triggers, and deliver sensor data to the DAQ. To prototype various aspects of this readout system, an FPGA based carrier board and an associated FMC daughter card containing the CERN Gigabit Transceiver (GBT) chipset have been developed. Furthermore, this contribution describes laboratory and radiation testing results with this prototype board set.

ALICE inner tracking system readout electronics prototype testing with the CERN ``Giga Bit Transceiver''

NASA Astrophysics Data System (ADS)

Schambach, J.; Rossewij, M. J.; Sielewicz, K. M.; Aglieri Rinella, G.; Bonora, M.; Ferencei, J.; Giubilato, P.; Vanat, T.

2016-12-01

The ALICE Collaboration is preparing a major detector upgrade for the LHC Run 3, which includes the construction of a new silicon pixel based Inner Tracking System (ITS). The ITS readout system consists of 192 readout boards to control the sensors and their power system, receive triggers, and deliver sensor data to the DAQ. To prototype various aspects of this readout system, an FPGA based carrier board and an associated FMC daughter card containing the CERN Gigabit Transceiver (GBT) chipset have been developed. This contribution describes laboratory and radiation testing results with this prototype board set.

Single Pixel Characterization of X-Ray TES Microcalorimeter Under AC Bias at MHz Frequencies

NASA Technical Reports Server (NTRS)

Gottardi, L.; Blandler, S. R.; Porter, F. S.; Sadleir, J. E.; Kilbourne, C. A.; Bailey, C. N.; Finkbeiner, F. M.; Chervenak, J. A.; Adams, J. S.; Eckart, M. E.;

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

NASA Astrophysics Data System (ADS)

Wang, T.; Barbero, M.; Berdalovic, I.; Bespin, C.; Bhat, S.; Breugnon, P.; Caicedo, I.; Cardella, R.; Chen, Z.; Degerli, Y.; Egidos, N.; Godiot, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Krüger, H.; Kugathasan, T.; Hügging, F.; Marin Tobon, C. A.; Moustakas, K.; Pangaud, P.; Schwemling, P.; Pernegger, H.; Pohl, D.-L.; Rozanov, A.; Rymaszewski, P.; Snoeys, W.; Wermes, N.

2018-03-01

Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. DMAPS integrating fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-Monopix and TJ-Monopix, are presented. LF-Monopix was fabricated in the LFoundry 150 nm CMOS technology, and TJ-Monopix has been designed in the TowerJazz 180 nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The paper makes a joint description of the two prototypes, so that their technical differences and challenges can be addressed in direct comparison. First measurement results for LF-Monopix will also be shown, demonstrating for the first time a fully functional fast readout DMAPS prototype implemented in the LFoundry technology.

CMOS Active Pixel Sensors as energy-range detectors for proton Computed Tomography.

PubMed

Esposito, M; Anaxagoras, T; Evans, P M; Green, S; Manolopoulos, S; Nieto-Camero, J; Parker, D J; Poludniowski, G; Price, T; Waltham, C; Allinson, N M

2015-06-03

Since the first proof of concept in the early 70s, a number of technologies has been proposed to perform proton CT (pCT), as a means of mapping tissue stopping power for accurate treatment planning in proton therapy. Previous prototypes of energy-range detectors for pCT have been mainly based on the use of scintillator-based calorimeters, to measure proton residual energy after passing through the patient. However, such an approach is limited by the need for only a single proton passing through the energy-range detector in a read-out cycle. A novel approach to this problem could be the use of pixelated detectors, where the independent read-out of each pixel allows to measure simultaneously the residual energy of a number of protons in the same read-out cycle, facilitating a faster and more efficient pCT scan. This paper investigates the suitability of CMOS Active Pixel Sensors (APSs) to track individual protons as they go through a number of CMOS layers, forming an energy-range telescope. Measurements performed at the iThemba Laboratories will be presented and analysed in terms of correlation, to confirm capability of proton tracking for CMOS APSs.

Development of radiation tolerant monolithic active pixel sensors with fast column parallel read-out

NASA Astrophysics Data System (ADS)

Koziel, M.; Dorokhov, A.; Fontaine, J.-C.; De Masi, R.; Winter, M.

2010-12-01

Monolithic active pixel sensors (MAPS) [1] (Turchetta et al., 2001) are being developed at IPHC—Strasbourg to equip the EUDET telescope [2] (Haas, 2006) and vertex detectors for future high energy physics experiments, including the STAR upgrade at RHIC [3] (T.S. Collaboration, 2005) and the CBM experiment at FAIR/GSI [4] (Heuser, 2006). High granularity, low material budget and high read-out speed are systematically required for most applications, complemented, for some of them, with high radiation tolerance. A specific column-parallel architecture, implemented in the MIMOSA-22 sensor, was developed to achieve fast read-out MAPS. Previous studies of the front-end architecture integrated in this sensor, which includes in-pixel amplification, have shown that the fixed pattern noise increase consecutive to ionizing radiation can be controlled by means of a negative feedback [5] (Hu-Guo et al., 2008). However, an unexpected rise of the temporal noise was observed. A second version of this chip (MIMOSA-22bis) was produced in order to search for possible improvements of the radiation tolerance, regarding this type of noise. In this prototype, the feedback transistor was tuned in order to mitigate the sensitivity of the pixel to ionizing radiation. The performances of the pixels after irradiation were investigated for two types of feedback transistors: enclosed layout transistor (ELT) [6] (Snoeys et al., 2000) and "standard" transistor with either large or small transconductance. The noise performance of all test structures was studied in various conditions (expected in future experiments) regarding temperature, integration time and ionizing radiation dose. Test results are presented in this paper. Based on these observations, ideas for further improvement of the radiation tolerance of column parallel MAPS are derived.

An inverter-based capacitive trans-impedance amplifier readout with offset cancellation and temporal noise reduction for IR focal plane array

NASA Astrophysics Data System (ADS)

Chen, Hsin-Han; Hsieh, Chih-Cheng

2013-09-01

This paper presents a readout integrated circuit (ROIC) with inverter-based capacitive trans-impedance amplifier (CTIA) and pseudo-multiple sampling technique for infrared focal plane array (IRFPA). The proposed inverter-based CTIA with a coupling capacitor [1], executing auto-zeroing technique to cancel out the varied offset voltage from process variation, is used to substitute differential amplifier in conventional CTIA. The tunable detector bias is applied from a global external bias before exposure. This scheme not only retains stable detector bias voltage and signal injection efficiency, but also reduces the pixel area as well. Pseudo-multiple sampling technique [2] is adopted to reduce the temporal noise of readout circuit. The noise reduction performance is comparable to the conventional multiple sampling operation without need of longer readout time proportional to the number of samples. A CMOS image sensor chip with 55×65 pixel array has been fabricated in 0.18um CMOS technology. It achieves a 12um×12um pixel size, a frame rate of 72 fps, a power-per-pixel of 0.66uW/pixel, and a readout temporal noise of 1.06mVrms (16 times of pseudo-multiple sampling), respectively.

The 160 TES bolometer read-out using FDM for SAFARI

NASA Astrophysics Data System (ADS)

Hijmering, R. A.; den Hartog, R. H.; van der Linden, A. J.; Ridder, M.; Bruijn, M. P.; van der Kuur, J.; van Leeuwen, B. J.; van Winden, P.; Jackson, B.

2014-07-01

For the read out of the Transition Edge Sensors (TES) bolometer arrays of the SAFARI instrument on the Japanese background-limited far-IR SPICA mission SRON is developing a Frequency Domain Multiplexing (FDM) read-out system. The next step after the successful demonstration of the read out of 38 TES bolometers using FDM was to demonstrate the FDM readout of the required 160 TES bolometers. Of the 160 LC filter and TES bolometer chains 151 have been connected and after cooldown 148 of the resonances could be identified. Although initial operation and locking of the pixels went smoothly the experiment revealed several complications. In this paper we describe the 160 pixel FDM set-up, show the results and discuss the issues faced during operation of the 160 pixel FDM experiment.

Characterisation of Vanilla—A novel active pixel sensor for radiation detection

NASA Astrophysics Data System (ADS)

Blue, A.; Bates, R.; Laing, A.; Maneuski, D.; O'Shea, V.; Clark, A.; Prydderch, M.; Turchetta, R.; Arvanitis, C.; Bohndiek, S.

2007-10-01

Novel features of a new monolithic active pixel sensor, Vanilla, with 520×520 pixels ( 25 μm square) has been characterised for the first time. Optimisation of the sensor operation was made through variation of frame rates, integration times and on-chip biases and voltages. Features such as flushed reset operation, ROI capturing and readout modes have been fully tested. Stability measurements were performed to test its suitablility for long-term applications. These results suggest the Vanilla sensor—along with bio-medical and space applications—is suitable for use in particle physics experiments.

Status of HVCMOS developments for ATLAS

NASA Astrophysics Data System (ADS)

Perić, I.; Blanco, R.; Casanova Mohr, R.; Ehrler, F.; Guezzi Messaoud, F.; Krämer, C.; Leys, R.; Prathapan, M.; Schimassek, R.; Schöning, A.; Vilella Figueras, E.; Weber, A.; Zhang, H.

2017-02-01

This paper describes the status of the developments made by ATLAS HVCMOS and HVMAPS collaborations. We have proposed two HVCMOS sensor concepts for ATLAS pixels—the capacitive coupled pixel detector (CCPD) and the monolithic detector. The sensors have been implemented in three semiconductor processes AMS H18, AMS H35 and LFoundry LFA15. Efficiency of 99.7% after neutron irradiation to 1015 neq/cm2W has been measured with the small area CCPD prototype in AMS H18 technology. About 84% of the particles are detected with a time resolution better than 25 ns. The sensor was implemented on a low resistivity substrate. The large area demonstrator sensor in AMS H35 process has been designed, produced and successfully tested. The sensor has been produced on different high resistivity substrates ranging from 80 Ωcm to more than 1 kΩ. Monolithic- and hybrid readout are both possible. In August 2016, six different monolithic pixel matrices for ATLAS with a total area of 1 cm2 have been submitted in LFoundry LFA15 process. The matrices implement column drain and triggered readout as well as waveform sampling capability on pixel level. Design details will be presented.

Module and electronics developments for the ATLAS ITk pixel system

NASA Astrophysics Data System (ADS)

Muñoz, F. J.

2018-03-01

The ATLAS experiment is preparing for an extensive modification of its detectors in the course of the planned HL-LHC accelerator upgrade around 2025. The ATLAS upgrade includes the replacement of the entire tracking system by an all-silicon detector (Inner Tracker, ITk). The five innermost layers of ITk will be a pixel detector built of new sensor and readout electronics technologies to improve the tracking performance and cope with the severe HL-LHC environment in terms of occupancy and radiation. The total area of the new pixel system could measure up to 14 m2, depending on the final layout choice, which is expected to take place in 2018. In this paper an overview of the ongoing R&D activities on modules and electronics for the ATLAS ITk is given including the main developments and achievements in silicon planar and 3D sensor technologies, readout and power challenges.

Monolithic pixel development in TowerJazz 180 nm CMOS for the outer pixel layers in the ATLAS experiment

NASA Astrophysics Data System (ADS)

Berdalovic, I.; Bates, R.; Buttar, C.; Cardella, R.; Egidos Plaja, N.; Hemperek, T.; Hiti, B.; van Hoorne, J. W.; Kugathasan, T.; Mandic, I.; Maneuski, D.; Marin Tobon, C. A.; Moustakas, K.; Musa, L.; Pernegger, H.; Riedler, P.; Riegel, C.; Schaefer, D.; Schioppa, E. J.; Sharma, A.; Snoeys, W.; Solans Sanchez, C.; Wang, T.; Wermes, N.

2018-01-01

The upgrade of the ATLAS tracking detector (ITk) for the High-Luminosity Large Hadron Collider at CERN requires the development of novel radiation hard silicon sensor technologies. Latest developments in CMOS sensor processing offer the possibility of combining high-resistivity substrates with on-chip high-voltage biasing to achieve a large depleted active sensor volume. We have characterised depleted monolithic active pixel sensors (DMAPS), which were produced in a novel modified imaging process implemented in the TowerJazz 180 nm CMOS process in the framework of the monolithic sensor development for the ALICE experiment. Sensors fabricated in this modified process feature full depletion of the sensitive layer, a sensor capacitance of only a few fF and radiation tolerance up to 1015 neq/cm2. This paper summarises the measurements of charge collection properties in beam tests and in the laboratory using radioactive sources and edge TCT. The results of these measurements show significantly improved radiation hardness obtained for sensors manufactured using the modified process. This has opened the way to the design of two large scale demonstrators for the ATLAS ITk. To achieve a design compatible with the requirements of the outer pixel layers of the tracker, a charge sensitive front-end taking 500 nA from a 1.8 V supply is combined with a fast digital readout architecture. The low-power front-end with a 25 ns time resolution exploits the low sensor capacitance to reduce noise and analogue power, while the implemented readout architectures minimise power by reducing the digital activity.

Radiation hardness and timing studies of a monolithic TowerJazz pixel design for the new ATLAS Inner Tracker

NASA Astrophysics Data System (ADS)

Riegel, C.; Backhaus, M.; Van Hoorne, J. W.; Kugathasan, T.; Musa, L.; Pernegger, H.; Riedler, P.; Schaefer, D.; Snoeys, W.; Wagner, W.

2017-01-01

A part of the upcoming HL-LHC upgrade of the ATLAS Detector is the construction of a new Inner Tracker. This upgrade opens new possibilities, but also presents challenges in terms of occupancy and radiation tolerance. For the pixel detector inside the inner tracker, hybrid modules containing passive silicon sensors and connected readout chips are presently used, but require expensive assembly techniques like fine-pitch bump bonding. Silicon devices fabricated in standard commercial CMOS technologies, which include part or all of the readout chain, are also investigated offering a reduced cost as they are cheaper per unit area than traditional silicon detectors. If they contain the full readout chain, as for a fully monolithic approach, there is no need for the expensive flip-chip assembly, resulting in a further cost reduction and material savings. In the outer pixel layers of the ATLAS Inner Tracker, the pixel sensors must withstand non-ionising energy losses of up to 1015 n/cm2 and offer a timing resolution of 25 ns or less. This paper presents test results obtained on a monolithic test chip, the TowerJazz 180nm Investigator, towards these specifications. The presented program of radiation hardness and timing studies has been launched to investigate this technology's potential for the new ATLAS Inner Tracker.

Development of n+-in-p planar pixel quadsensor flip-chipped with FE-I4 readout ASICs

NASA Astrophysics Data System (ADS)

Unno, Y.; Kamada, S.; Yamamura, K.; Yamamoto, H.; Hanagaki, K.; Hori, R.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Takashima, R.; Tojo, J.; Kono, T.; Nagai, R.; Saito, S.; Sugibayashi, K.; Hirose, M.; Jinnouchi, O.; Sato, S.; Sawai, H.; Hara, K.; Sato, Kz.; Sato, Kj.; Iwabuchi, S.; Suzuki, J.

2017-01-01

We have developed flip-chip modules applicable to the pixel detector for the HL-LHC. New radiation-tolerant n+-in-p planar pixel sensors of a size of four FE-I4 application-specific integrated circuits (ASICs) are laid out in a 6-in wafer. Variation in readout connection for the pixels at the boundary of ASICs is implemented in the design of quadsensors. Bump bonding technology is developed for four ASICs onto one quadsensor. Both sensors and ASICs are thinned to 150 μm before bump bonding, and are held flat with vacuum chucks. Using lead-free SnAg solder bumps, we encounter deficiency with large areas of disconnected bumps after thermal stress treatment, including irradiation. Surface oxidation of the solder bumps is identified as a critical source of this deficiency after bump bonding trials, using SnAg bumps with solder flux, indium bumps, and SnAg bumps with a newly-introduced hydrogen-reflow process. With hydrogen-reflow, we establish flux-less bump bonding technology with SnAg bumps, appropriate for mass production of the flip-chip modules with thin sensors and thin ASICs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fahim, Farah; Deptuch, Grzegorz; Shenai, Alpana

The Vertically Integrated Photon Imaging Chip - Large, (VIPIC-L), is a large area, small pixel (65μm), 3D integrated, photon counting ASIC with zero-suppressed or full frame dead-time-less data readout. It features data throughput of 14.4 Gbps per chip with a full frame readout speed of 56kframes/s in the imaging mode. VIPIC-L contain 192 x 192 pixel array and the total size of the chip is 1.248cm x 1.248cm with only a 5μm periphery. It contains about 120M transistors. A 1.3M pixel camera module will be developed by arranging a 6 x 6 array of 3D VIPIC-L’s bonded to a largemore » area silicon sensor on the analog side and to a readout board on the digital side. The readout board hosts a bank of FPGA’s, one per VIPIC-L to allow processing of up to 0.7 Tbps of raw data produced by the camera.« less

A 4MP high-dynamic-range, low-noise CMOS image sensor

NASA Astrophysics Data System (ADS)

Ma, Cheng; Liu, Yang; Li, Jing; Zhou, Quan; Chang, Yuchun; Wang, Xinyang

2015-03-01

In this paper we present a 4 Megapixel high dynamic range, low dark noise and dark current CMOS image sensor, which is ideal for high-end scientific and surveillance applications. The pixel design is based on a 4-T PPD structure. During the readout of the pixel array, signals are first amplified, and then feed to a low- power column-parallel ADC array which is already presented in [1]. Measurement results show that the sensor achieves a dynamic range of 96dB, a dark noise of 1.47e- at 24fps speed. The dark current is 0.15e-/pixel/s at -20oC.

Optical and x-ray characterization of two novel CMOS image sensors

NASA Astrophysics Data System (ADS)

Bohndiek, Sarah E.; Arvanitis, Costas D.; Venanzi, Cristian; Royle, Gary J.; Clark, Andy T.; Crooks, Jamie P.; Prydderch, Mark L.; Turchetta, Renato; Blue, Andrew; Speller, Robert D.

2007-02-01

A UK consortium (MI3) has been founded to develop advanced CMOS pixel designs for scientific applications. Vanilla, a 520x520 array of 25μm pixels benefits from flushed reset circuitry for low noise and random pixel access for region of interest (ROI) readout. OPIC, a 64x72 test structure array of 30μm digital pixels has thresholding capabilities for sparse readout at 3,700fps. Characterization is performed with both optical illumination and x-ray exposure via a scintillator. Vanilla exhibits 34+/-3e - read noise, interactive quantum efficiency of 54% at 500nm and can read a 6x6 ROI at 24,395fps. OPIC has 46+/-3e - read noise and a wide dynamic range of 65dB due to high full well capacity. Based on these characterization studies, Vanilla could be utilized in applications where demands include high spectral response and high speed region of interest readout while OPIC could be used for high speed, high dynamic range imaging.

Theory and Development of Position-Sensitive Quantum Calorimeters. Degree awarded by Stanford Univ.

NASA Technical Reports Server (NTRS)

Figueroa-Feliciano, Enectali; White, Nicholas E. (Technical Monitor)

2001-01-01

Quantum calorimeters are being developed as imaging spectrometers for future X-ray astrophysics observatories. Much of the science to be done by these instruments could benefit greatly from larger focal-plane coverage of the detector (without increasing pixel size). An order of magnitude more area will greatly increase the science throughput of these future instruments. One of the main deterrents to achieving this goal is the complexity of the readout schemes involved. We have devised a way to increase the number of pixels from the current baseline designs by an order of magnitude without increasing the number of channels required for readout. The instrument is a high energy resolution, distributed-readout imaging spectrometer called a Position-Sensitive Transition-Edge Sensor (POST). A POST is a quantum calorimeter consisting of two Transition-Edge Sensors (TESS) on the ends of a long absorber capable of one-dimensional imaging spectroscopy. Comparing rise time and energy information from the two TESS, the position of the event in the POST is determined. The energy of the event is inferred from the sum of the two pulses. We have developed a generalized theoretical formalism for distributed-readout calorimeters and apply it to our devices. We derive the noise theory and calculate the theoretical energy resolution of a POST. Our calculations show that a 7-pixel POST with 6 keV saturation energy can achieve 2.3 eV resolution, making this a competitive design for future quantum calorimeter instruments. For this thesis we fabricated 7- and 15-pixel POSTS using Mo/Au TESs and gold absorbers, and moved from concept drawings on scraps of napkins to a 32 eV energy resolution at 1.5 keV, 7-pixel POST calorimeter.

Development of N+ in P pixel sensors for a high-luminosity large hadron collider

NASA Astrophysics Data System (ADS)

Kamada, Shintaro; Yamamura, Kazuhisa; Unno, Yoshinobu; Ikegami, Yoichi

2014-11-01

Hamamatsu Photonics K. K. is developing an N+ in a p planar pixel sensor with high radiation tolerance for the high-luminosity large hadron collider (HL-LHC). The N+ in the p planar pixel sensor is a candidate for the HL-LHC and offers the advantages of high radiation tolerance at a reasonable price compared with the N+ in an n planar sensor, the three-dimensional sensor, and the diamond sensor. However, the N+ in the p planar pixel sensor still presents some problems that need to be solved, such as its slim edge and the danger of sparks between the sensor and readout integrated circuit. We are now attempting to solve these problems with wafer-level processes, which is important for mass production. To date, we have obtained a 250-μm edge with an applied bias voltage of 1000 V. To protect against high-voltage sparks from the edge, we suggest some possible designs for the N+ edge.

A high sensitivity 20Mfps CMOS image sensor with readout speed of 1Tpixel/sec for visualization of ultra-high speed phenomena

NASA Astrophysics Data System (ADS)

Kuroda, R.; Sugawa, S.

2017-02-01

Ultra-high speed (UHS) CMOS image sensors with on-chop analog memories placed on the periphery of pixel array for the visualization of UHS phenomena are overviewed in this paper. The developed UHS CMOS image sensors consist of 400H×256V pixels and 128 memories/pixel, and the readout speed of 1Tpixel/sec is obtained, leading to 10 Mfps full resolution video capturing with consecutive 128 frames, and 20 Mfps half resolution video capturing with consecutive 256 frames. The first development model has been employed in the high speed video camera and put in practical use in 2012. By the development of dedicated process technologies, photosensitivity improvement and power consumption reduction were simultaneously achieved, and the performance improved version has been utilized in the commercialized high-speed video camera since 2015 that offers 10 Mfps with ISO16,000 photosensitivity. Due to the improved photosensitivity, clear images can be captured and analyzed even under low light condition, such as under a microscope as well as capturing of UHS light emission phenomena.

Silicon pixel R&D for CLIC

NASA Astrophysics Data System (ADS)

Munker, M.

2017-01-01

Challenging detector requirements are imposed by the physics goals at the future multi-TeV e+ e- Compact Linear Collider (CLIC). A single point resolution of 3 μm for the vertex detector and 7 μm for the tracker is required. Moreover, the CLIC vertex detector and tracker need to be extremely light weighted with a material budget of 0.2% X0 per layer in the vertex detector and 1-2% X0 in the tracker. A fast time slicing of 10 ns is further required to suppress background from beam-beam interactions. A wide range of sensor and readout ASIC technologies are investigated within the CLIC silicon pixel R&D effort. Various hybrid planar sensor assemblies with a pixel size of 25×25 μm2 and 55×55 μm2 have been produced and characterised by laboratory measurements and during test-beam campaigns. Experimental and simulation results for thin (50 μm-500 μm) slim edge and active-edge planar, and High-Voltage CMOS sensors hybridised to various readout ASICs (Timepix, Timepix3, CLICpix) are presented.

Advanced testing of the DEPFET minimatrix particle detector

NASA Astrophysics Data System (ADS)

Andricek, L.; Kodyš, P.; Koffmane, C.; Ninkovic, J.; Oswald, C.; Richter, R.; Ritter, A.; Rummel, S.; Scheirich, J.; Wassatsch, A.

2012-01-01

The DEPFET (DEPleted Field Effect Transistor) is an active pixel particle detector with a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) integrated in each pixel, providing first amplification stage of readout electronics. Excellent signal over noise performance is gained this way. The DEPFET sensor will be used as a vertex detector in the Belle II experiment at SuperKEKB, electron-positron collider in Japan. The vertex detector will be composed of two layers of pixel detectors (DEPFET) and four layers of strip detectors. The DEPFET sensor requires switching and current readout circuits for its operation. These circuits have been designed as ASICs (Application Specific Integrated Circuits) in several different versions, but they provide insufficient flexibility for precise detector testing. Therefore, a test system with a flexible control cycle range and minimal noise has been designed for testing and characterizing of small detector prototypes (Minimatrices). Sensors with different design layouts and thicknesses are produced in order to evaluate and select the one with the best performance for the Belle II application. Description of the test system as well as measurement results are presented.

Three-dimensional cross point readout detector design for including depth information

NASA Astrophysics Data System (ADS)

Lee, Seung-Jae; Baek, Cheol-Ha

2018-04-01

We designed a depth-encoding positron emission tomography (PET) detector using a cross point readout method with wavelength-shifting (WLS) fibers. To evaluate the characteristics of the novel detector module and the PET system, we used the DETECT2000 to perform optical photon transport in the crystal array. The GATE was also used. The detector module is made up of four layers of scintillator arrays, the five layers of WLS fiber arrays, and two sensor arrays. The WLS fiber arrays in each layer cross each other to transport light to each sensor array. The two sensor arrays are coupled to the forward and left sides of the WLS fiber array, respectively. The identification of three-dimensional pixels was determined using a digital positioning algorithm. All pixels were well decoded, with the system resolution ranging from 2.11 mm to 2.29 mm at full width at half maximum (FWHM).

Hit efficiency study of CMS prototype forward pixel detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Dongwook; /Johns Hopkins U.

2006-01-01

In this paper the author describes the measurement of the hit efficiency of a prototype pixel device for the CMS forward pixel detector. These pixel detectors were FM type sensors with PSI46V1 chip readout. The data were taken with the 120 GeV proton beam at Fermilab during the period of December 2004 to February 2005. The detectors proved to be highly efficient (99.27 {+-} 0.02%). The inefficiency was primarily located near the corners of the individual pixels.

Backside illuminated CMOS-TDI line scan sensor for space applications

NASA Astrophysics Data System (ADS)

Cohen, Omer; Ofer, Oren; Abramovich, Gil; Ben-Ari, Nimrod; Gershon, Gal; Brumer, Maya; Shay, Adi; Shamay, Yaron

2018-05-01

A multi-spectral backside illuminated Time Delayed Integration Radiation Hardened line scan sensor utilizing CMOS technology was designed for continuous scanning Low Earth Orbit small satellite applications. The sensor comprises a single silicon chip with 4 independent arrays of pixels where each array is arranged in 2600 columns with 64 TDI levels. A multispectral optical filter whose spectral responses per array are adjustable per system requirement is assembled at the package level. A custom 4T Pixel design provides the required readout speed, low-noise, very low dark current, and high conversion gains. A 2-phase internally controlled exposure mechanism improves the sensor's dynamic MTF. The sensor high level of integration includes on-chip 12 bit per pixel analog to digital converters, on-chip controller, and CMOS compatible voltage levels. Thus, the power consumption and the weight of the supporting electronics are reduced, and a simple electrical interface is provided. An adjustable gain provides a Full Well Capacity ranging from 150,000 electrons up to 500,000 electrons per column and an overall readout noise per column of less than 120 electrons. The imager supports line rates ranging from 50 to 10,000 lines/sec, with power consumption of less than 0.5W per array. Thus, the sensor is characterized by a high pixel rate, a high dynamic range and a very low power. To meet a Latch-up free requirement RadHard architecture and design rules were utilized. In this paper recent electrical and electro-optical measurements of the sensor's Flight Models will be presented for the first time.

Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

NASA Technical Reports Server (NTRS)

Gee, R.; Kemeny, S.; Kim, Q.; Mendis, S.; Nakamura, J.; Nixon, R.; Ortiz, M.; Pain, B.; Staller, C.; Zhou, Z;

The Simbol-X Low Energy Detector

NASA Astrophysics Data System (ADS)

Lechner, Peter

2009-05-01

For the Low Energy Detector of Simbol-X a new type of active pixel sensor based on the integrated amplifier DEPFET has been developed. This concept combines large area, scalable pixel size, low noise, and ultra-fast readout. Flight representative prototypes have been processed with a performance matching the Simbol-X specifications and demonstrating the technology readiness.

Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Nakamura, Junichi (Inventor); Kemeny, Sabrina E. (Inventor)

2005-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

Front-end multiplexing—applied to SQUID multiplexing: Athena X-IFU and QUBIC experiments

NASA Astrophysics Data System (ADS)

Prele, D.

2015-08-01

As we have seen for digital camera market and a sensor resolution increasing to "megapixels", all the scientific and high-tech imagers (whatever the wave length - from radio to X-ray range) tends also to always increases the pixels number. So the constraints on front-end signals transmission increase too. An almost unavoidable solution to simplify integration of large arrays of pixels is front-end multiplexing. Moreover, "simple" and "efficient" techniques allow integration of read-out multiplexers in the focal plane itself. For instance, CCD (Charge Coupled Device) technology has boost number of pixels in digital camera. Indeed, this is exactly a planar technology which integrates both the sensors and a front-end multiplexed readout. In this context, front-end multiplexing techniques will be discussed for a better understanding of their advantages and their limits. Finally, the cases of astronomical instruments in the millimeter and in the X-ray ranges using SQUID (Superconducting QUantum Interference Device) will be described.

Silicon pixel-detector R&D for CLIC

NASA Astrophysics Data System (ADS)

Nürnberg, A.

2016-11-01

The physics aims at the future CLIC high-energy linear e+e- collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The principal challenges are: a point resolution of a few μm, ultra-low mass (~ 0.2%X0 per layer for the vertex region and ~ 1%X0 per layer for the outer tracker), very low power dissipation (compatible with air-flow cooling in the inner vertex region) and pulsed power operation, complemented with ~ 10 ns time stamping capabilities. A highly granular all-silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints. For the vertex-detector region, hybrid pixel detectors with small pitch (25 μm) and analog readout are explored. For the outer tracking region, both hybrid concepts and fully integrated CMOS sensors are under consideration. The feasibility of ultra-thin sensor layers is validated with Timepix3 readout ASICs bump bonded to active edge planar sensors with 50 μm to 150 μm thickness. Prototypes of CLICpix readout ASICs implemented in 6525 nm CMOS technology with 25 μm pixel pitch have been produced. Hybridisation concepts have been developed for interconnecting these chips either through capacitive coupling to active HV-CMOS sensors or through bump-bonding to planar sensors. Recent R&D achievements include results from beam tests with all types of hybrid assemblies. Simulations based on Geant4 and TCAD are used to validate the experimental results and to assess and optimise the performance of various detector designs.

Tests of UFXC32k chip with CdTe pixel detector

NASA Astrophysics Data System (ADS)

Maj, P.; Taguchi, T.; Nakaye, Y.

2018-02-01

The paper presents the performance of the UFXC32K—a hybrid pixel detector readout chip working with CdTe detectors. The UFXC32K has a pixel pitch of 75 μm and can cope with both input signal polarities. This functionality allows operating with widely used silicon sensors collecting holes and CdTe sensors collecting electrons. This article describes the chip focusing on solving the issues connected to high-Z sensor material, namely high leakage currents, slow charge collection time and thick material resulting in increased charge-sharring effects. The measurements were conducted with higher X-ray energies including 17.4 keV from molybdenum. Conclusions drawn inside the paper show the UFXC32K's usability for CdTe sensors in high X-ray energy applications.

Multiple-Event, Single-Photon Counting Imaging Sensor

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Cunningham, Thomas J.; Sun, Chao; Wang, Kang L.

2011-01-01

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

High dynamic range pixel architecture for advanced diagnostic medical x-ray imaging applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Izadi, Mohammad Hadi; Karim, Karim S.

2006-05-15

The most widely used architecture in large-area amorphous silicon (a-Si) flat panel imagers is a passive pixel sensor (PPS), which consists of a detector and a readout switch. While the PPS has the advantage of being compact and amenable toward high-resolution imaging, small PPS output signals are swamped by external column charge amplifier and data line thermal noise, which reduce the minimum readable sensor input signal. In contrast to PPS circuits, on-pixel amplifiers in a-Si technology reduce readout noise to levels that can meet even the stringent requirements for low noise digital x-ray fluoroscopy (<1000 noise electrons). However, larger voltagesmore » at the pixel input cause the output of the amplified pixel to become nonlinear thus reducing the dynamic range. We reported a hybrid amplified pixel architecture based on a combination of PPS and amplified pixel designs that, in addition to low noise performance, also resulted in large-signal linearity and consequently higher dynamic range [K. S. Karim et al., Proc. SPIE 5368, 657 (2004)]. The additional benefit in large-signal linearity, however, came at the cost of an additional pixel transistor. We present an amplified pixel design that achieves the goals of low noise performance and large-signal linearity without the need for an additional pixel transistor. Theoretical calculations and simulation results for noise indicate the applicability of the amplified a-Si pixel architecture for high dynamic range, medical x-ray imaging applications that require switching between low exposure, real-time fluoroscopy and high-exposure radiography.« less

Fully depleted CMOS pixel sensor development and potential applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baudot, J.; Kachel, M.; CNRS, UMR7178, 67037 Strasbourg

CMOS pixel sensors are often opposed to hybrid pixel sensors due to their very different sensitive layer. In standard CMOS imaging processes, a thin (about 20 μm) low resistivity epitaxial layer acts as the sensitive volume and charge collection is mostly driven by thermal agitation. In contrast, the so-called hybrid pixel technology exploits a thick (typically 300 μm) silicon sensor with high resistivity allowing for the depletion of this volume, hence charges drift toward collecting electrodes. But this difference is fading away with the recent availability of some CMOS imaging processes based on a relatively thick (about 50 μm) highmore » resistivity epitaxial layer which allows for full depletion. This evolution extents the range of applications for CMOS pixel sensors where their known assets, high sensitivity and granularity combined with embedded signal treatment, could potentially foster breakthrough in detection performances for specific scientific instruments. One such domain is the Xray detection for soft energies, typically below 10 keV, where the thin sensitive layer was previously severely impeding CMOS sensor usage. Another application becoming realistic for CMOS sensors, is the detection in environment with a high fluence of non-ionizing radiation, such as hadron colliders. However, when considering highly demanding applications, it is still to be proven that micro-circuits required to uniformly deplete the sensor at the pixel level, do not mitigate the sensitivity and efficiency required. Prototype sensors in two different technologies with resistivity higher than 1 kΩ, sensitive layer between 40 and 50 μm and featuring pixel pitch in the range 25 to 50 μm, have been designed and fabricated. Various biasing architectures were adopted to reach full depletion with only a few volts. Laboratory investigations with three types of sources (X-rays, β-rays and infrared light) demonstrated the validity of the approach with respect to depletion, keeping a low noise figure. Especially, an energy resolution of about 400 eV for 5 keV X-rays was obtained for single pixels. The prototypes have then been exposed to gradually increased fluences of neutrons, from 10{sup 13} to 5x10{sup 14} neq/cm{sup 2}. Again laboratory tests allowed to evaluate the signal over noise persistence on the different pixels implemented. Currently our development mostly targets the detection of soft X-rays, with the ambition to develop a pixel sensor matching counting rates as affordable with hybrid pixel sensors, but with an extended sensitivity to low energy and finer pixel about 25 x 25 μm{sup 2}. The original readout architecture proposed relies on a two tiers chip. The first tier consists of a sensor with a modest dynamic in order to insure low noise performances required by sensitivity. The interconnected second tier chip enhances the read-out speed by introducing massive parallelization. Performances reachable with this strategy combining counting and integration will be detailed. (authors)« less

Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector

DTIC Science & Technology

2013-02-21

telescope consists of six Mimosa tracking planes, the readout data acquisition system and the trigger hardware, and provides a ≈ 3µm track point- ing...is larger than the Mimosa sensors of the telescope, separate sets of data were taken to cover the irradiated and non-irradiated regions of the sensors

Zero suppression logic of the ALICE muon forward tracker pixel chip prototype PIXAM and associated readout electronics development

NASA Astrophysics Data System (ADS)

Flouzat, C.; Değerli, Y.; Guilloux, F.; Orsini, F.; Venault, P.

2015-05-01

In the framework of the ALICE experiment upgrade at HL-LHC, a new forward tracking detector, the Muon Forward Tracker (MFT), is foreseen to overcome the intrinsic limitations of the present Muon Spectrometer and will perform new measurements of general interest for the whole ALICE physics. To fulfill the new detector requirements, CMOS Monolithic Active Pixel Sensors (MAPS) provide an attractive trade-off between readout speed, spatial resolution, radiation hardness, granularity, power consumption and material budget. This technology has been chosen to equip the Muon Forward Tracker and also the vertex detector: the Inner Tracking System (ITS). Since few years, an intensive R&D program has been performed on the design of MAPS in the 0.18 μ m CMOS Image Sensor (CIS) process. In order to avoid pile up effects in the experiment, the classical rolling shutter readout system of MAPS has been improved to overcome the readout speed limitation. A zero suppression algorithm, based on a 3 by 3 cluster finding (position and data), has been chosen for the MFT. This algorithm allows adequate data compression for the sensor. This paper presents the large size prototype PIXAM, which represents 1/3 of the final chip, and will focus specially on the zero suppression block architecture. This chip is designed and under fabrication in the 0.18 μ m CIS process. Finally, the readout electronics principle to send out the compressed data flow is also presented taking into account the cluster occupancy per MFT plane for a single central Pb-Pb collision.

Tracking Efficiency And Charge Sharing of 3D Silicon Sensors at Different Angles in a 1.4T Magnetic Field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gjersdal, H.; /Oslo U.; Bolle, E.

2012-05-07

A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400 {micro}m long pixel side, this resulting in a p-n inter-electrode distance of {approx} 71 {micro}m. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, chargemore » sharing and tracking efficiency data were collected at zero and 15{sup o} angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.« less

Transparent Fingerprint Sensor System for Large Flat Panel Display.

PubMed

Seo, Wonkuk; Pi, Jae-Eun; Cho, Sung Haeung; Kang, Seung-Youl; Ahn, Seong-Deok; Hwang, Chi-Sun; Jeon, Ho-Sik; Kim, Jong-Uk; Lee, Myunghee

2018-01-19

In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (TFT) sensor panel, based on a self-capacitive sensing scheme. An armorphousindium gallium zinc oxide (a-IGZO) TFT sensor array and associated custom Read-Out IC (ROIC) are implemented for the system. The sensor panel has a 200 × 200 pixel array and each pixel size is as small as 50 μm × 50 μm. The ROIC uses only eight analog front-end (AFE) amplifier stages along with a successive approximation analog-to-digital converter (SAR ADC). To get the fingerprint image data from the sensor array, the ROIC senses a capacitance, which is formed by a cover glass material between a human finger and an electrode of each pixel of the sensor array. Three methods are reviewed for estimating the self-capacitance. The measurement result demonstrates that the transparent fingerprint sensor system has an ability to differentiate a human finger's ridges and valleys through the fingerprint sensor array.

Transparent Fingerprint Sensor System for Large Flat Panel Display

PubMed Central

Seo, Wonkuk; Pi, Jae-Eun; Cho, Sung Haeung; Kang, Seung-Youl; Ahn, Seong-Deok; Hwang, Chi-Sun; Jeon, Ho-Sik; Kim, Jong-Uk

2018-01-01

In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (TFT) sensor panel, based on a self-capacitive sensing scheme. An armorphousindium gallium zinc oxide (a-IGZO) TFT sensor array and associated custom Read-Out IC (ROIC) are implemented for the system. The sensor panel has a 200 × 200 pixel array and each pixel size is as small as 50 μm × 50 μm. The ROIC uses only eight analog front-end (AFE) amplifier stages along with a successive approximation analog-to-digital converter (SAR ADC). To get the fingerprint image data from the sensor array, the ROIC senses a capacitance, which is formed by a cover glass material between a human finger and an electrode of each pixel of the sensor array. Three methods are reviewed for estimating the self-capacitance. The measurement result demonstrates that the transparent fingerprint sensor system has an ability to differentiate a human finger’s ridges and valleys through the fingerprint sensor array. PMID:29351218

A review of advances in pixel detectors for experiments with high rate and radiation

NASA Astrophysics Data System (ADS)

Garcia-Sciveres, Maurice; Wermes, Norbert

2018-06-01

The large Hadron collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the high luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.

Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources

NASA Astrophysics Data System (ADS)

Veale, M. C.; Adkin, P.; Booker, P.; Coughlan, J.; French, M. J.; Hart, M.; Nicholls, T.; Schneider, A.; Seller, P.; Pape, I.; Sawhney, K.; Carini, G. A.; Hart, P. A.

2017-12-01

The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 105 12 keV photons per image readout at 4.5 MHz. In this paper results from the testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. The performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.

Design of an ultra low power CMOS pixel sensor for a future neutron personal dosimeter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y.; Hu-Guo, C.; Husson, D.

2011-07-01

Despite a continuously increasing demand, neutron electronic personal dosimeters (EPDs) are still far from being completely established because their development is a very difficult task. A low-noise, ultra low power consumption CMOS pixel sensor for a future neutron personal dosimeter has been implemented in a 0.35 {mu}m CMOS technology. The prototype is composed of a pixel array for detection of charged particles, and the readout electronics is integrated on the same substrate for signal processing. The excess electrons generated by an impinging particle are collected by the pixel array. The charge collection time and the efficiency are the crucial pointsmore » of a CMOS detector. The 3-D device simulations using the commercially available Synopsys-SENTAURUS package address the detailed charge collection process. Within a time of 1.9 {mu}s, about 59% electrons created by the impact particle are collected in a cluster of 4 x 4 pixels with the pixel pitch of 80 {mu}m. A charge sensitive preamplifier (CSA) and a shaper are employed in the frond-end readout. The tests with electrical signals indicate that our prototype with a total active area of 2.56 x 2.56 mm{sup 2} performs an equivalent noise charge (ENC) of less than 400 e - and 314 {mu}W power consumption, leading to a promising prototype. (authors)« less

Recent progress and development of a speedster-EXD: a new event-triggered hybrid CMOS x-ray detector

NASA Astrophysics Data System (ADS)

Griffith, Christopher V.; Falcone, Abraham D.; Prieskorn, Zachary R.; Burrows, David N.

2015-08-01

We present the characterization of a new event-driven X-ray hybrid CMOS detector developed by Penn State University in collaboration with Teledyne Imaging Sensors. Along with its low susceptibility to radiation damage, low power consumption, and fast readout time to avoid pile-up, the Speedster-EXD has been designed with the capability to limit its readout to only those pixels containing charge, thus enabling even faster effective frame rates. The threshold for the comparator in each pixel can be set by the user so that only pixels with signal above the set threshold are read out. The Speedster-EXD hybrid CMOS detector also has two new in-pixel features that reduce noise from known noise sources: (1) a low-noise, high-gain CTIA amplifier to eliminate crosstalk from interpixel capacitance (IPC) and (2) in-pixel CDS subtraction to reduce kTC noise. We present the read noise, dark current, IPC, energy resolution, and gain variation measurements of one Speedster-EXD detector.

A system for characterization of DEPFET silicon pixel matrices and test beam results

NASA Astrophysics Data System (ADS)

Furletov, Sergey; DEPFET Collaboration

2011-02-01

The DEPFET pixel detector offers first stage in-pixel amplification by incorporating a field effect transistor in the high resistivity silicon substrate. In this concept, a very small input capacitance can be realized thus allowing for low noise measurements. This makes DEPFET sensors a favorable technology for tracking in particle physics. Therefore a system with a DEPFET pixel matrix was developed to test DEPFET performance for an application as a vertex detector for the Belle II experiment. The system features a current based, row-wise readout of a DEPFET pixel matrix with a designated readout chip, steering chips for matrix control, a FPGA based data acquisition board, and a dedicated software package. The system was successfully operated in both test beam and lab environment. In 2009 new DEPFET matrices have been characterized in a 120 GeV pion beam at the CERN SPS. The current status of the DEPFET system and test beam results are presented.

The first bump-bonded pixel detectors on CVD diamond

NASA Astrophysics Data System (ADS)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Palmieri, V. G.; Pan, L. S.; Peitz, A.; Pernicka, M.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Steuerer, J.; Stone, R.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Turchetta, R.; Vittone, E.; Wagner, A.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Zeuner, W.; Ziock, H.; Zoeller, M.; Charles, E.; Ciocio, A.; Dao, K.; Einsweiler, K.; Fasching, D.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Milgrome, O.; Palaio, N.; Richardson, J.; Sinervo, P.; Zizka, G.; RD42 Collaboration

1999-11-01

Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 μm was observed, consistent with expectations given the detector pitch.

A 128×96 Pixel Stack-Type Color Image Sensor: Stack of Individual Blue-, Green-, and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin Film Transistor Readout Circuit

NASA Astrophysics Data System (ADS)

Seo, Hokuto; Aihara, Satoshi; Watabe, Toshihisa; Ohtake, Hiroshi; Sakai, Toshikatsu; Kubota, Misao; Egami, Norifumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Mamoru; Hirao, Takashi

2011-02-01

A color image was produced by a vertically stacked image sensor with blue (B)-, green (G)-, and red (R)-sensitive organic photoconductive films, each having a thin-film transistor (TFT) array that uses a zinc oxide (ZnO) channel to read out the signal generated in each organic film. The number of the pixels of the fabricated image sensor is 128×96 for each color, and the pixel size is 100×100 µm2. The current on/off ratio of the ZnO TFT is over 106, and the B-, G-, and R-sensitive organic photoconductive films show excellent wavelength selectivity. The stacked image sensor can produce a color image at 10 frames per second with a resolution corresponding to the pixel number. This result clearly shows that color separation is achieved without using any conventional color separation optical system such as a color filter array or a prism.

A Dual-Mode Large-Arrayed CMOS ISFET Sensor for Accurate and High-Throughput pH Sensing in Biomedical Diagnosis.

PubMed

Huang, Xiwei; Yu, Hao; Liu, Xu; Jiang, Yu; Yan, Mei; Wu, Dongping

2015-09-01

The existing ISFET-based DNA sequencing detects hydrogen ions released during the polymerization of DNA strands on microbeads, which are scattered into microwell array above the ISFET sensor with unknown distribution. However, false pH detection happens at empty microwells due to crosstalk from neighboring microbeads. In this paper, a dual-mode CMOS ISFET sensor is proposed to have accurate pH detection toward DNA sequencing. Dual-mode sensing, optical and chemical modes, is realized by integrating a CMOS image sensor (CIS) with ISFET pH sensor, and is fabricated in a standard 0.18-μm CIS process. With accurate determination of microbead physical locations with CIS pixel by contact imaging, the dual-mode sensor can correlate local pH for one DNA slice at one location-determined microbead, which can result in improved pH detection accuracy. Moreover, toward a high-throughput DNA sequencing, a correlated-double-sampling readout that supports large array for both modes is deployed to reduce pixel-to-pixel nonuniformity such as threshold voltage mismatch. The proposed CMOS dual-mode sensor is experimentally examined to show a well correlated pH map and optical image for microbeads with a pH sensitivity of 26.2 mV/pH, a fixed pattern noise (FPN) reduction from 4% to 0.3%, and a readout speed of 1200 frames/s. A dual-mode CMOS ISFET sensor with suppressed FPN for accurate large-arrayed pH sensing is proposed and demonstrated with state-of-the-art measured results toward accurate and high-throughput DNA sequencing. The developed dual-mode CMOS ISFET sensor has great potential for future personal genome diagnostics with high accuracy and low cost.

Bonding techniques for hybrid active pixel sensors (HAPS)

NASA Astrophysics Data System (ADS)

Bigas, M.; Cabruja, E.; Lozano, M.

2007-05-01

A hybrid active pixel sensor (HAPS) consists of an array of sensing elements which is connected to an electronic read-out unit. The most used way to connect these two different devices is bump bonding. This interconnection technique is very suitable for these systems because it allows a very fine pitch and a high number of I/Os. However, there are other interconnection techniques available such as direct bonding. This paper, as a continuation of a review [M. Lozano, E. Cabruja, A. Collado, J. Santander, M. Ullan, Nucl. Instr. and Meth. A 473 (1-2) (2001) 95-101] published in 2001, presents an update of the different advanced bonding techniques available for manufacturing a hybrid active pixel detector.

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

2003-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

2000-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Investigation of CMOS pixel sensor with 0.18 μm CMOS technology for high-precision tracking detector

NASA Astrophysics Data System (ADS)

Zhang, L.; Fu, M.; Zhang, Y.; Yan, W.; Wang, M.

2017-01-01

The Circular Electron Positron Collider (CEPC) proposed by the Chinese high energy physics community is aiming to measure Higgs particles and their interactions precisely. The tracking detector including Silicon Inner Tracker (SIT) and Forward Tracking Disks (FTD) has driven stringent requirements on sensor technologies in term of spatial resolution, power consumption and readout speed. CMOS Pixel Sensor (CPS) is a promising candidate to approach these requirements. This paper presents the preliminary studies on the sensor optimization for tracking detector to achieve high collection efficiency while keeping necessary spatial resolution. Detailed studies have been performed on the charge collection using a 0.18 μm CMOS image sensor process. This process allows high resistivity epitaxial layer, leading to a significant improvement on the charge collection and therefore improving the radiation tolerance. Together with the simulation results, the first exploratory prototype has bee designed and fabricated. The prototype includes 9 different pixel arrays, which vary in terms of pixel pitch, diode size and geometry. The total area of the prototype amounts to 2 × 7.88 mm2.

A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity

PubMed Central

Zhang, Fan; Niu, Hanben

2016-01-01

In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 107 when illuminated by a 405-nm diode laser and 1/1.4 × 104 when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e− rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena. PMID:27367699

A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity.

PubMed

Zhang, Fan; Niu, Hanben

2016-06-29

In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 10⁷ when illuminated by a 405-nm diode laser and 1/1.4 × 10⁴ when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e(-) rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena.

Electron imaging with Medipix2 hybrid pixel detector.

PubMed

McMullan, G; Cattermole, D M; Chen, S; Henderson, R; Llopart, X; Summerfield, C; Tlustos, L; Faruqi, A R

2007-01-01

The electron imaging performance of Medipix2 is described. Medipix2 is a hybrid pixel detector composed of two layers. It has a sensor layer and a layer of readout electronics, in which each 55 microm x 55 microm pixel has upper and lower energy discrimination and MHz rate counting. The sensor layer consists of a 300 microm slab of pixellated monolithic silicon and this is bonded to the readout chip. Experimental measurement of the detective quantum efficiency, DQE(0) at 120 keV shows that it can reach approximately 85% independent of electron exposure, since the detector has zero noise, and the DQE(Nyquist) can reach approximately 35% of that expected for a perfect detector (4/pi(2)). Experimental measurement of the modulation transfer function (MTF) at Nyquist resolution for 120 keV electrons using a 60 keV lower energy threshold, yields a value that is 50% of that expected for a perfect detector (2/pi). Finally, Monte Carlo simulations of electron tracks and energy deposited in adjacent pixels have been performed and used to calculate expected values for the MTF and DQE as a function of the threshold energy. The good agreement between theory and experiment allows suggestions for further improvements to be made with confidence. The present detector is already very useful for experiments that require a high DQE at very low doses.

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

NASA Astrophysics Data System (ADS)

Benoit, M.; Braccini, S.; Casse, G.; Chen, H.; Chen, K.; Di Bello, F. A.; Ferrere, D.; Golling, T.; Gonzalez-Sevilla, S.; Iacobucci, G.; Kiehn, M.; Lanni, F.; Liu, H.; Meng, L.; Merlassino, C.; Miucci, A.; Muenstermann, D.; Nessi, M.; Okawa, H.; Perić, I.; Rimoldi, M.; Ristić, B.; Barrero Pinto, M. Vicente; Vossebeld, J.; Weber, M.; Weston, T.; Wu, W.; Xu, L.; Zaffaroni, E.

2018-02-01

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1× 1014 and 5× 1015 1-MeV- neq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1× 1015 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.

Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources

DOE PAGES

Veale, M. C.; Adkin, P.; Booker, P.; ...

2017-12-04

The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 10 5 12 keV photons per image readout at 4.5 MHz. In this paper results from themore » testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. As a result, the performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.« less

Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veale, M. C.; Adkin, P.; Booker, P.

The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 10 5 12 keV photons per image readout at 4.5 MHz. In this paper results from themore » testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. As a result, the performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.« less

The ATLAS Diamond Beam Monitor: Luminosity detector at the LHC

NASA Astrophysics Data System (ADS)

Schaefer, D. M.; ATLAS Collaboration

2016-07-01

After the first three years of the LHC running, the ATLAS experiment extracted its pixel detector system to refurbish and re-position the optical readout drivers and install a new barrel layer of pixels. The experiment has also taken advantage of this access to install a set of beam monitoring telescopes with pixel sensors, four each in the forward and backward regions. These telescopes are based on chemical vapor deposited (CVD) diamond sensors to survive in this high radiation environment without needing extensive cooling. This paper describes the lessons learned in construction and commissioning of the ATLAS Diamond Beam Monitor (DBM). We show results from the construction quality assurance tests and commissioning performance, including results from cosmic ray running in early 2015.

Optimization of CMOS image sensor utilizing variable temporal multisampling partial transfer technique to achieve full-frame high dynamic range with superior low light and stop motion capability

NASA Astrophysics Data System (ADS)

Kabir, Salman; Smith, Craig; Armstrong, Frank; Barnard, Gerrit; Schneider, Alex; Guidash, Michael; Vogelsang, Thomas; Endsley, Jay

2018-03-01

Differential binary pixel technology is a threshold-based timing, readout, and image reconstruction method that utilizes the subframe partial charge transfer technique in a standard four-transistor (4T) pixel CMOS image sensor to achieve a high dynamic range video with stop motion. This technology improves low light signal-to-noise ratio (SNR) by up to 21 dB. The method is verified in silicon using a Taiwan Semiconductor Manufacturing Company's 65 nm 1.1 μm pixel technology 1 megapixel test chip array and is compared with a traditional 4 × oversampling technique using full charge transfer to show low light SNR superiority of the presented technology.

The Phase-II ATLAS ITk pixel upgrade

NASA Astrophysics Data System (ADS)

Terzo, S.

2017-07-01

The entire tracking system of the ATLAS experiment will be replaced during the LHC Phase-II shutdown (foreseen to take place around 2025) by an all-silicon detector called the ``ITk'' (Inner Tracker). The innermost portion of ITk will consist of a pixel detector with five layers in the barrel region and ring-shaped supports in the end-cap regions. It will be instrumented with new sensor and readout electronics technologies to improve the tracking performance and cope with the HL-LHC environment, which will be severe in terms of occupancy and radiation levels. The new pixel system could include up to 14 m2 of silicon, depending on the final layout, which is expected to be decided in 2017. Several layout options are being investigated at the moment, including some with novel inclined support structures in the barrel end-cap overlap region and others with very long innermost barrel layers. Forward coverage could be as high as |eta| <4. Supporting structures will be based on low mass, highly stable and highly thermally conductive carbon-based materials cooled by evaporative carbon dioxide circulated in thin-walled titanium pipes embedded in the structures. Planar, 3D, and CMOS sensors are being investigated to identify the optimal technology, which may be different for the various layers. The RD53 Collaboration is developing the new readout chip. The pixel off-detector readout electronics will be implemented in the framework of the general ATLAS trigger and DAQ system. A readout speed of up to 5 Gb/s per data link will be needed in the innermost layers going down to 640 Mb/s for the outermost. Because of the very high radiation level inside the detector, the first part of the transmission has to be implemented electrically, with signals converted for optical transmission at larger radii. Extensive tests are being carried out to prove the feasibility of implementing serial powering, which has been chosen as the baseline for the ITk pixel system due to the reduced material in the servicing cables foreseen for this option.

3D-FBK Pixel Sensors: Recent Beam Tests Results with Irradiated Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Micelli, A.; /INFN, Trieste /Udine U.; Helle, K.

2012-04-30

The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology ismore » an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.« less

MiniDSS: a low-power and high-precision miniaturized digital sun sensor

NASA Astrophysics Data System (ADS)

de Boer, B. M.; Durkut, M.; Laan, E.; Hakkesteegt, H.; Theuwissen, A.; Xie, N.; Leijtens, J. L.; Urquijo, E.; Bruins, P.

2017-11-01

A high-precision and low-power miniaturized digital sun sensor has been developed at TNO. The single-chip sun sensor comprises an application specific integrated circuit (ASIC) on which an active pixel sensor (APS), read-out and processing circuitry as well as communication circuitry are combined. The design was optimized for low recurrent cost. The sensor is albedo insensitive and the prototype combines an accuracy in the order of 0.03° with a mass of just 72 g and a power consumption of only 65 mW.

3D track reconstruction capability of a silicon hybrid active pixel detector

NASA Astrophysics Data System (ADS)

Bergmann, Benedikt; Pichotka, Martin; Pospisil, Stanislav; Vycpalek, Jiri; Burian, Petr; Broulim, Pavel; Jakubek, Jan

2017-06-01

Timepix3 detectors are the latest generation of hybrid active pixel detectors of the Medipix/Timepix family. Such detectors consist of an active sensor layer which is connected to the readout ASIC (application specific integrated circuit), segmenting the detector into a square matrix of 256 × 256 pixels (pixel pitch 55 μm). Particles interacting in the active sensor material create charge carriers, which drift towards the pixelated electrode, where they are collected. In each pixel, the time of the interaction (time resolution 1.56 ns) and the amount of created charge carriers are measured. Such a device was employed in an experiment in a 120 GeV/c pion beam. It is demonstrated, how the drift time information can be used for "4D" particle tracking, with the three spatial dimensions and the energy losses along the particle trajectory (dE/dx). Since the coordinates in the detector plane are given by the pixelation ( x, y), the x- and y-resolution is determined by the pixel pitch (55 μm). A z-resolution of 50.4 μm could be achieved (for a 500 μm thick silicon sensor at 130 V bias), whereby the drift time model independent z-resolution was found to be 28.5 μm.

Beam test results of the BTeV silicon pixel detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gabriele Chiodini et al.

2000-09-28

The authors have described the results of the BTeV silicon pixel detector beam test. The pixel detectors under test used samples of the first two generations of Fermilab pixel readout chips, FPIX0 and FPIX1, (indium bump-bonded to ATLAS sensor prototypes). The spatial resolution achieved using analog charge information is excellent for a large range of track inclination. The resolution is still very good using only 2-bit charge information. A relatively small dependence of the resolution on bias voltage is observed. The resolution is observed to depend dramatically on the discriminator threshold, and it deteriorates rapidly for threshold above 4000e{sup {minus}}.

Further applications for mosaic pixel FPA technology

NASA Astrophysics Data System (ADS)

Liddiard, Kevin C.

2011-06-01

In previous papers to this SPIE forum the development of novel technology for next generation PIR security sensors has been described. This technology combines the mosaic pixel FPA concept with low cost optics and purpose-designed readout electronics to provide a higher performance and affordable alternative to current PIR sensor technology, including an imaging capability. Progressive development has resulted in increased performance and transition from conventional microbolometer fabrication to manufacture on 8 or 12 inch CMOS/MEMS fabrication lines. A number of spin-off applications have been identified. In this paper two specific applications are highlighted: high performance imaging IRFPA design and forest fire detection. The former involves optional design for small pixel high performance imaging. The latter involves cheap expendable sensors which can detect approaching fire fronts and send alarms with positional data via mobile phone or satellite link. We also introduce to this SPIE forum the application of microbolometer IR sensor technology to IoT, the Internet of Things.

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

DOE PAGES

Benoit, M.; Braccini, S.; Casse, G.; ...

2018-02-08

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4 th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×10 14 and 5×10 15 1–MeV– n eq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured atmore » the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×10 15 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.« less

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benoit, M.; Braccini, S.; Casse, G.

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4 th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×10 14 and 5×10 15 1–MeV– n eq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured atmore » the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×10 15 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.« less

Very-large-area CCD image sensors: concept and cost-effective research

NASA Astrophysics Data System (ADS)

Bogaart, E. W.; Peters, I. M.; Kleimann, A. C.; Manoury, E. J. P.; Klaassens, W.; de Laat, W. T. F. M.; Draijer, C.; Frost, R.; Bosiers, J. T.

2009-01-01

A new-generation full-frame 36x48 mm2 48Mp CCD image sensor with vertical anti-blooming for professional digital still camera applications is developed by means of the so-called building block concept. The 48Mp devices are formed by stitching 1kx1k building blocks with 6.0 µm pixel pitch in 6x8 (hxv) format. This concept allows us to design four large-area (48Mp) and sixty-two basic (1Mp) devices per 6" wafer. The basic image sensor is relatively small in order to obtain data from many devices. Evaluation of the basic parameters such as the image pixel and on-chip amplifier provides us statistical data using a limited number of wafers. Whereas the large-area devices are evaluated for aspects typical to large-sensor operation and performance, such as the charge transport efficiency. Combined with the usability of multi-layer reticles, the sensor development is cost effective for prototyping. Optimisation of the sensor design and technology has resulted in a pixel charge capacity of 58 ke- and significantly reduced readout noise (12 electrons at 25 MHz pixel rate, after CDS). Hence, a dynamic range of 73 dB is obtained. Microlens and stack optimisation resulted in an excellent angular response that meets with the wide-angle photography demands.

Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

DTIC Science & Technology

2016-01-20

Figure 7 4×4 GMAPD array wire bonded to CMOS timing circuits Figure 8 Low‐fill‐factor APD design used in lidar sensors The APD doping...epitaxial growth and the pixels are isolated by mesa etch. 128×32 lidar image sensors were built by bump bonding the APD arrays to a CMOS timing...passive image sensor with this large a format based on hybridization of a GMAPD array to a CMOS readout. Fig. 14 shows one of the first images taken

Improved Signal Chains for Readout of CMOS Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Hancock, Bruce; Cunningham, Thomas

2009-01-01

An improved generic design has been devised for implementing signal chains involved in readout from complementary metal oxide/semiconductor (CMOS) image sensors and for other readout integrated circuits (ICs) that perform equivalent functions. The design applies to any such IC in which output signal charges from the pixels in a given row are transferred simultaneously into sampling capacitors at the bottoms of the columns, then voltages representing individual pixel charges are read out in sequence by sequentially turning on column-selecting field-effect transistors (FETs) in synchronism with source-follower- or operational-amplifier-based amplifier circuits. The improved design affords the best features of prior source-follower-and operational- amplifier-based designs while overcoming the major limitations of those designs. The limitations can be summarized as follows: a) For a source-follower-based signal chain, the ohmic voltage drop associated with DC bias current flowing through the column-selection FET causes unacceptable voltage offset, nonlinearity, and reduced small-signal gain. b) For an operational-amplifier-based signal chain, the required bias current and the output noise increase superlinearly with size of the pixel array because of a corresponding increase in the effective capacitance of the row bus used to couple the sampled column charges to the operational amplifier. The effect of the bus capacitance is to simultaneously slow down the readout circuit and increase noise through the Miller effect.

Recent X-ray hybrid CMOS detector developments and measurements

NASA Astrophysics Data System (ADS)

Hull, Samuel V.; Falcone, Abraham D.; Burrows, David N.; Wages, Mitchell; Chattopadhyay, Tanmoy; McQuaide, Maria; Bray, Evan; Kern, Matthew

2017-08-01

The Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors (TIS), have progressed their efforts to improve soft X-ray Hybrid CMOS detector (HCD) technology on multiple fronts. Having newly acquired a Teledyne cryogenic SIDECARTM ASIC for use with HxRG devices, measurements were performed with an H2RG HCD and the cooled SIDECARTM. We report new energy resolution and read noise measurements, which show a significant improvement over room temperature SIDECARTM operation. Further, in order to meet the demands of future high-throughput and high spatial resolution X-ray observatories, detectors with fast readout and small pixel sizes are being developed. We report on characteristics of new X-ray HCDs with 12.5 micron pitch that include in-pixel CDS circuitry and crosstalk-eliminating CTIA amplifiers. In addition, PSU and TIS are developing a new large-scale array Speedster-EXD device. The original 64 × 64 pixel Speedster-EXD prototype used comparators in each pixel to enable event driven readout with order of magnitude higher effective readout rates, which will now be implemented in a 550 × 550 pixel device. Finally, the detector lab is involved in a sounding rocket mission that is slated to fly in 2018 with an off-plane reflection grating array and an H2RG X-ray HCD. We report on the planned detector configuration for this mission, which will increase the NASA technology readiness level of X-ray HCDs to TRL 9.

Dedicated multichannel readout ASIC coupled with single crystal diamond for dosimeter application

NASA Astrophysics Data System (ADS)

Fabbri, A.; Falco, M. D.; De Notaristefani, F.; Galasso, M.; Marinelli, M.; Orsolini Cencelli, V.; Tortora, L.; Verona, C.; Verona Rinati, G.

2013-02-01

This paper reports on the tests of a low-noise, multi-channel readout integrated circuit used as a readout electronic front-end for a diamond multi-pixel dosimeter. The system is developed for dose distribution measurement in radiotherapy applications. The first 10-channel prototype chip was designed and fabricated in a 0.18 um CMOS process. Every channel includes a charge integrator with a 10 pF capacitor and a double slope A/D converter. The diamond multi-pixel detector, based on CVD synthetic single crystal diamond Schottky diodes, is made by a 3 × 3 sensor matrix. The overall device has been tested under irradiation with 6 MeV radio therapeutic photon beams at the Policlinico ``Tor Vergata'' (PTV) hospital. Measurements show a 20 fA RMS leakage current from the front-end input stage and a negligible dark current from the diamond detector, a stable temporal response and a good linear behaviour as a function of both dose and dose rate. These characteristics were common to each tested channel.

A PFM-based MWIR DROIC employing off-pixel fine conversion of photocharge to digital using integrated column ADCs

NASA Astrophysics Data System (ADS)

Abbasi, S.; Galioglu, A.; Shafique, A.; Ceylan, O.; Yazici, M.; Gurbuz, Y.

2017-02-01

A 32x32 prototype of a digital readout IC (DROIC) for medium-wave infrared focal plane arrays (MWIR IR-FPAs) is presented. The DROIC employs in-pixel photocurrent to digital conversion based on a pulse frequency modulation (PFM) loop and boasts a novel feature of off-pixel residue conversion using 10-bit column SAR ADCs. The remaining charge at the end of integration in typical PFM based digital pixel sensors is usually wasted. Previous works employing in-pixel extended counting methods make use of extra memory and counters to convert this left-over charge to digital, thereby performing fine conversion of the incident photocurrent. This results in a low quantization noise and hence keeps the readout noise low. However, focal plane arrays (FPAs) with small pixel pitch are constrained in pixel area, which makes it difficult to benefit from in-pixel extended counting circuitry. Thus, in this work, a novel approach to measure the residue outside the pixel using column -parallel SAR ADCs has been proposed. Moreover, a modified version of the conventional PFM based pixel has been designed to help hold the residue charge and buffer it to the column ADC. In addition to the 2D array of pixels, the prototype consists of 32 SAR ADCs, a timing controller block and a memory block to buffer the residue data coming out of the ADCs. The prototype has been designed and fabricated in 90nm CMOS.

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Geronimo, G.; Fried, J.; Rehak, P.

We present an application-specific integrated circuit (ASIC) for high-resolution x-ray spectrometers (XRS). The ASIC reads out signals from pixelated silicon drift detectors (SDDs). The pixel does not have an integrated field effect transistor (FET); rather, readout is accomplished by wire-bonding the anodes to the inputs of the ASIC. The ASIC dissipates 32 mW, and offers 16 channels of low-noise charge amplification, high-order shaping with baseline stabilization, discrimination, a novel pile-up rejector, and peak detection with an analog memory. The readout is sparse and based on custom low-power tristatable low-voltage differential signaling (LPT-LVDS). A unit of 64 SDD pixels, read outmore » by four ASICs, covers an area of 12.8 cm{sup 2} and dissipates with the sensor biased about 15 mW/cm{sup 2}. As a tile-based system, the 64-pixel units cover a large detection area. Our preliminary measurements at -44 C show a FWHM of 145 eV at the 5.9 keV peak of a {sup 55}Fe source, and less than 80 eV on a test-pulse line at 200 eV.« less

Preliminary Assessment of Microwave Readout Multiplexing Factor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Croce, Mark Philip; Koehler, Katrina Elizabeth; Rabin, Michael W.

2017-01-23

Ultra-high resolution microcalorimeter gamma spectroscopy is a new non-destructive assay technology for measurement of plutonium isotopic composition, with the potential to reduce total measurement uncertainty to a level competitive with destructive analysis methods [1-4]. Achieving this level of performance in practical applications requires not only the energy resolution now routinely achieved with transition-edge sensor microcalorimeter arrays (an order of magnitude better than for germanium detectors) but also high throughput. Microcalorimeter gamma spectrometers have not yet achieved detection efficiency and count rate capability that is comparable to germanium detectors, largely because of limits from existing readout technology. Microcalorimeter detectors must bemore » operated at low temperature to achieve their exceptional energy resolution. Although the typical 100 mK operating temperatures can be achieved with reliable, cryogen-free systems, the cryogenic complexity and heat load from individual readout channels for large sensor arrays is prohibitive. Multiplexing is required for practical systems. The most mature multiplexing technology at present is time-division multiplexing (TDM) [3, 5-6]. In TDM, the sensor outputs are switched by applying bias current to one SQUID amplifier at a time. Transition-edge sensor (TES) microcalorimeter arrays as large as 256 pixels have been developed for X-ray and gamma-ray spectroscopy using TDM technology. Due to bandwidth limits and noise scaling, TDM is limited to a maximum multiplexing factor of approximately 32-40 sensors on one readout line [8]. Increasing the size of microcalorimeter arrays above the kilopixel scale, required to match the throughput of germanium detectors, requires the development of a new readout technology with a much higher multiplexing factor.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dragone, A; /SLAC; Pratte, J.F.

An ASIC for the readout of signals from X-ray Active Matrix Pixel Sensor (XAMPS) detectors to be used at the Linac Coherent Light Source (LCLS) is presented. The X-ray Pump Probe (XPP) instrument, for which the ASIC has been designed, requires a large input dynamic range on the order of 104 photons at 8 keV with a resolution of half a photon FWHM. Due to the size of the pixel and the length of the readout line, large input capacitance is expected, leading to stringent requirement on the noise optimization. Furthermore, the large number of pixels needed for a goodmore » position resolution and the fixed LCLS beam period impose limitations on the time available for the single pixel readout. Considering the periodic nature of the LCLS beam, the ASIC developed for this application is a time-variant system providing low-noise charge integration, filtering and correlated double sampling. In order to cope with the large input dynamic range a charge pump scheme implementing a zero-balance measurement method has been introduced. It provides an on chip 3-bit coarse digital conversion of the integrated charge. The residual charge is sampled using correlated double sampling into analog memory and measured with the required resolution. The first 64 channel prototype of the ASIC has been fabricated in TSMC CMOS 0.25 {micro}m technology. In this paper, the ASIC architecture and performances are presented.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses atmore » megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. Lastly, we detail the characteristics, operation, testing and application of the detector.« less

A FPGA-based Cluster Finder for CMOS Monolithic Active Pixel Sensors of the MIMOSA-26 Family

NASA Astrophysics Data System (ADS)

Li, Qiyan; Amar-Youcef, S.; Doering, D.; Deveaux, M.; Fröhlich, I.; Koziel, M.; Krebs, E.; Linnik, B.; Michel, J.; Milanovic, B.; Müntz, C.; Stroth, J.; Tischler, T.

2014-06-01

CMOS Monolithic Active Pixel Sensors (MAPS) demonstrated excellent performances in the field of charged particle tracking. Among their strong points are an single point resolution few μm, a light material budget of 0.05% X0 in combination with a good radiation tolerance and high rate capability. Those features make the sensors a valuable technology for vertex detectors of various experiments in heavy ion and particle physics. To reduce the load on the event builders and future mass storage systems, we have developed algorithms suited for preprocessing and reducing the data streams generated by the MAPS. This real-time processing employs remaining free resources of the FPGAs of the readout controllers of the detector and complements the on-chip data reduction circuits of the MAPS.

Characterisation of GaAs:Cr pixel sensors coupled to Timepix chips in view of synchrotron applications

NASA Astrophysics Data System (ADS)

Ponchut, C.; Cotte, M.; Lozinskaya, A.; Zarubin, A.; Tolbanov, O.; Tyazhev, A.

2017-12-01

In order to meet the needs of some ESRF beamlines for highly efficient 2D X-ray detectors in the 20-50 keV range, GaAs:Cr pixel sensors coupled to TIMEPIX readout chips were implemented into a MAXIPIX detector. Use of GaAs:Cr sensor material is intended to overcome the limitations of Si (low absorption) and of CdTe (fluorescence) in this energy range The GaAs:Cr sensor assemblies were characterised with both laboratory X-ray sources and monochromatic synchrotron X-ray beams. The sensor response as a function of bias voltage was compared to a theoretical model, leading to an estimation of the μτ product of electrons in GaAs:Cr sensor material of 1.6×10-4 cm2/V. The spatial homogeneity of X-ray images obtained with the sensors was measured in different irradiation conditions, showing a particular sensitivity to small variations in the incident beam spectrum. 2D-resolved elemental mapping of the sensor surface was carried out to investigate a possible relation between the noise pattern observed in X-ray images and local fluctuations in chemical composition. A scanning of the sensor response at subpixel scale revealed that these irregularities can be correlated with a distortion of the effective pixel shapes.

SpectraCAM SPM: a camera system with high dynamic range for scientific and medical applications

NASA Astrophysics Data System (ADS)

Bhaskaran, S.; Baiko, D.; Lungu, G.; Pilon, M.; VanGorden, S.

2005-08-01

A scientific camera system having high dynamic range designed and manufactured by Thermo Electron for scientific and medical applications is presented. The newly developed CID820 image sensor with preamplifier-per-pixel technology is employed in this camera system. The 4 Mega-pixel imaging sensor has a raw dynamic range of 82dB. Each high-transparent pixel is based on a preamplifier-per-pixel architecture and contains two photogates for non-destructive readout of the photon-generated charge (NDRO). Readout is achieved via parallel row processing with on-chip correlated double sampling (CDS). The imager is capable of true random pixel access with a maximum operating speed of 4MHz. The camera controller consists of a custom camera signal processor (CSP) with an integrated 16-bit A/D converter and a PowerPC-based CPU running a Linux embedded operating system. The imager is cooled to -40C via three-stage cooler to minimize dark current. The camera housing is sealed and is designed to maintain the CID820 imager in the evacuated chamber for at least 5 years. Thermo Electron has also developed custom software and firmware to drive the SpectraCAM SPM camera. Included in this firmware package is the new Extreme DRTM algorithm that is designed to extend the effective dynamic range of the camera by several orders of magnitude up to 32-bit dynamic range. The RACID Exposure graphical user interface image analysis software runs on a standard PC that is connected to the camera via Gigabit Ethernet.

Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging.

PubMed

Esposito, M; Anaxagoras, T; Konstantinidis, A C; Zheng, Y; Speller, R D; Evans, P M; Allinson, N M; Wells, K

2014-07-07

Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this detector compared to FPIs. Optical characterization, x-ray contrast measurements and theoretical DQE evaluation suggest that a trade off can be found between the need of a large imaging area and the requirement of a uniform imaging performance, making the DynAMITe large area CMOS APS suitable for a range of bio-medical applications.

AC Read-Out Circuits for Single Pixel Characterization of TES Microcalorimeters and Bolometers

NASA Technical Reports Server (NTRS)

Gottardi, L.; van de Kuur, J.; Bandler, S.; Bruijn, M.; de Korte, P.; Gao, J. R.; den Hartog, R.; Hijmering, R. A.; Hoevers, H.; Koshropanah, P.;

Infrared sensors for Earth observation missions

NASA Astrophysics Data System (ADS)

Ashcroft, P.; Thorne, P.; Weller, H.; Baker, I.

2007-10-01

SELEX S&AS is developing a family of infrared sensors for earth observation missions. The spectral bands cover shortwave infrared (SWIR) channels from around 1μm to long-wave infrared (LWIR) channels up to 15μm. Our mercury cadmium telluride (MCT) technology has enabled a sensor array design that can satisfy the requirements of all of the SWIR and medium-wave infrared (MWIR) bands with near-identical arrays. This is made possible by the combination of a set of existing technologies that together enable a high degree of flexibility in the pixel geometry, sensitivity, and photocurrent integration capacity. The solution employs a photodiode array under the control of a readout integrated circuit (ROIC). The ROIC allows flexible geometries and in-pixel redundancy to maximise operability and reliability, by combining the photocurrent from a number of photodiodes into a single pixel. Defective or inoperable diodes (or "sub-pixels") can be deselected with tolerable impact on the overall pixel performance. The arrays will be fabricated using the "loophole" process in MCT grown by liquid-phase epitaxy (LPE). These arrays are inherently robust, offer high quantum efficiencies and have been used in previous space programs. The use of loophole arrays also offers access to SELEX's avalanche photodiode (APD) technology, allowing low-noise, highly uniform gain at the pixel level where photon flux is very low.

TES Detector Noise Limited Readout Using SQUID Multiplexers

NASA Technical Reports Server (NTRS)

Staguhn, J. G.; Benford, D. J.; Chervenak, J. A.; Khan, S. A.; Moseley, S. H.; Shafer, R. A.; Deiker, S.; Grossman, E. N.; Hilton, G. C.; Irwin, K. D.

2004-01-01

The availability of superconducting Transition Edge Sensors (TES) with large numbers of individual detector pixels requires multiplexers for efficient readout. The use of multiplexers reduces the number of wires needed between the cryogenic electronics and the room temperature electronics and cuts the number of required cryogenic amplifiers. We are using an 8 channel SQUID multiplexer to read out one-dimensional TES arrays which are used for submillimeter astronomical observations. We present results from test measurements which show that the low noise level of the SQUID multiplexers allows accurate measurements of the TES Johnson noise, and that in operation, the readout noise is dominated by the detector noise. Multiplexers for large number of channels require a large bandwidth for the multiplexed readout signal. We discuss the resulting implications for the noise performance of these multiplexers which will be used for the readout of two dimensional TES arrays in next generation instruments.

Distributed Antenna-Coupled TES for FIR Detectors Arrays

NASA Technical Reports Server (NTRS)

Day, Peter K.; Leduc, Henry G.; Dowell, C. Darren; Lee, Richard A.; Zmuidzinas, Jonas

2007-01-01

We describe a new architecture for a superconducting detector for the submillimeter and far-infrared. This detector uses a distributed hot-electron transition edge sensor (TES) to collect the power from a focal-plane-filling slot antenna array. The sensors lay directly across the slots of the antenna and match the antenna impedance of about 30 ohms. Each pixel contains many sensors that are wired in parallel as a single distributed TES, which results in a low impedance that readily matches to a multiplexed SQUID readout These detectors are inherently polarization sensitive, with very low cross-polarization response, but can also be configured to sum both polarizations. The dual-polarization design can have a bandwidth of 50The use of electron-phonon decoupling eliminates the need for micro-machining, making the focal plane much easier to fabricate than with absorber-coupled, mechanically isolated pixels. We discuss applications of these detectors and a hybridization scheme compatible with arrays of tens of thousands of pixels.

Capacitively coupled hybrid pixel assemblies for the CLIC vertex detector

NASA Astrophysics Data System (ADS)

Tehrani, N. Alipour; Arfaoui, S.; Benoit, M.; Dannheim, D.; Dette, K.; Hynds, D.; Kulis, S.; Perić, I.; Petrič, M.; Redford, S.; Sicking, E.; Valerio, P.

2016-07-01

The vertex detector at the proposed CLIC multi-TeV linear e+e- collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. A prototype of such an assembly, using two custom designed chips (CCPDv3 as active sensor glued to a CLICpix readout chip), has been characterised both in the lab and in beam tests at the CERN SPS using 120 GeV/c positively charged hadrons. Results of these characterisation studies are presented both for single and dual amplification stages in the active sensor, where efficiencies of greater than 99% have been achieved at -60 V substrate bias, with a single hit resolution of 6.1 μm . Pixel cross-coupling results are also presented, showing the sensitivity to placement precision and planarity of the glue layer.

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation

DOE PAGES

Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull; ...

2016-01-28

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses atmore » megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. Lastly, we detail the characteristics, operation, testing and application of the detector.« less

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation

PubMed Central

Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull; Shanks, Katherine S.; Weiss, Joel T.; Gruner, Sol M.

2016-01-01

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed. PMID:26917125

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation.

PubMed

Philipp, Hugh T; Tate, Mark W; Purohit, Prafull; Shanks, Katherine S; Weiss, Joel T; Gruner, Sol M

2016-03-01

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8-12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10-100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed.

LAMBDA 2M GaAs—A multi-megapixel hard X-ray detector for synchrotrons

NASA Astrophysics Data System (ADS)

Pennicard, D.; Smoljanin, S.; Pithan, F.; Sarajlic, M.; Rothkirch, A.; Yu, Y.; Liermann, H. P.; Morgenroth, W.; Winkler, B.; Jenei, Z.; Stawitz, H.; Becker, J.; Graafsma, H.

2018-01-01

Synchrotrons can provide very intense and focused X-ray beams, which can be used to study the structure of matter down to the atomic scale. In many experiments, the quality of the results depends strongly on detector performance; in particular, experiments studying dynamics of samples require fast, sensitive X-ray detectors. "LAMBDA" is a photon-counting hybrid pixel detector system for experiments at synchrotrons, based on the Medipix3 readout chip. Its main features are a combination of comparatively small pixel size (55 μm), high readout speed at up to 2000 frames per second with no time gap between images, a large tileable module design, and compatibility with high-Z sensors for efficient detection of higher X-ray energies. A large LAMBDA system for hard X-ray detection has been built using Cr-compensated GaAs as a sensor material. The system is composed of 6 GaAs tiles, each of 768 by 512 pixels, giving a system with approximately 2 megapixels and an area of 8.5 by 8.5 cm2. While the sensor uniformity of GaAs is not as high as that of silicon, its behaviour is stable over time, and it is possible to correct nonuniformities effectively by postprocessing of images. By using multiple 10 Gigabit Ethernet data links, the system can be read out at the full speed of 2000 frames per second. The system has been used in hard X-ray diffraction experiments studying the structure of samples under extreme pressure in diamond anvil cells. These experiments can provide insight into geological processes. Thanks to the combination of high speed readout, large area and high sensitivity to hard X-rays, it is possible to obtain previously unattainable information in these experiments about atomic-scale structure on a millisecond timescale during rapid changes of pressure or temperature.

10000 pixels wide CMOS frame imager for earth observation from a HALE UAV

NASA Astrophysics Data System (ADS)

Delauré, B.; Livens, S.; Everaerts, J.; Kleihorst, R.; Schippers, Gert; de Wit, Yannick; Compiet, John; Banachowicz, Bartosz

2009-09-01

MEDUSA is the lightweight high resolution camera, designed to be operated from a solar-powered Unmanned Aerial Vehicle (UAV) flying at stratospheric altitudes. The instrument is a technology demonstrator within the Pegasus program and targets applications such as crisis management and cartography. A special wide swath CMOS imager has been developed by Cypress Semiconductor Cooperation Belgium to meet the specific sensor requirements of MEDUSA. The CMOS sensor has a stitched design comprising a panchromatic and color sensor on the same die. Each sensor consists of 10000*1200 square pixels (5.5μm size, novel 6T architecture) with micro-lenses. The exposure is performed by means of a high efficiency snapshot shutter. The sensor is able to operate at a rate of 30fps in full frame readout. Due to a novel pixel design, the sensor has low dark leakage of the memory elements (PSNL) and low parasitic light sensitivity (PLS). Still it maintains a relative high QE (Quantum efficiency) and a FF (fill factor) of over 65%. It features an MTF (Modulation Transfer Function) higher than 60% at Nyquist frequency in both X and Y directions The measured optical/electrical crosstalk (expressed as MTF) of this 5.5um pixel is state-of-the art. These properties makes it possible to acquire sharp images also in low-light conditions.

Implementation of an Optical Readout System for High-Sensitivity Terahertz Microelectromechanical Sensor Array

DTIC Science & Technology

2014-09-01

rod moves about the illumination scene, the pixels in the detector start to flicker . The ‘ flickering ’ effect is due to the metal rod blocking THz...still possible to mitigate convective heat exchange between the sensor and the ambient surroundings. To mitigate the effects of convective heat...detector start to flicker . The ‘ flickering ’ effect is due to the metal rod blocking THz radiation. This effect is more apparent in the video

Improved Space Object Observation Techniques Using CMOS Detectors

NASA Astrophysics Data System (ADS)

Schildknecht, T.; Hinze, A.; Schlatter, P.; Silha, J.; Peltonen, J.; Santti, T.; Flohrer, T.

2013-08-01

CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contain their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. Presently applied and proposed optical observation strategies for space debris surveys and space surveillance applications had to be analyzed. The major design drivers were identified and potential benefits from using available and future CMOS sensors were assessed. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, the characteristics of a particular CMOS sensor available at the Zimmerwald observatory were analyzed by performing laboratory test measurements.

MT3250BA: a 320×256-50µm snapshot microbolometer ROIC for high-resistance detector arrays

NASA Astrophysics Data System (ADS)

Eminoglu, Selim; Akin, Tayfun

2013-06-01

This paper reports the development of a new microbolometer readout integrated circuit (MT3250BA) designed for high-resistance detector arrays. MT3250BA is the first microbolometer readout integrated circuit (ROIC) product from Mikro-Tasarim Ltd., which is a fabless IC design house specialized in the development of monolithic CMOS imaging sensors and ROICs for hybrid photonic imaging sensors and microbolometers. MT3250BA has a format of 320 × 256 and a pixel pitch of 50 µm, developed with a system-on-chip architecture in mind, where all the timing and biasing for this ROIC are generated on-chip without requiring any external inputs. MT3250BA is a highly configurable ROIC, where many of its features can be programmed through a 3-wire serial interface allowing on-the-fly configuration of many ROIC features. MT3250BA has 2 analog video outputs and 1 analog reference output for pseudo-differential operation, and the ROIC can be programmed to operate in the 1 or 2-output modes. A unique feature of MT3250BA is that it performs snapshot readout operation; therefore, the image quality will only be limited by the thermal time constant of the detector pixels, but not by the scanning speed of the ROIC, as commonly found in the conventional microbolometer ROICs performing line-by-line (rolling-line) readout operation. The signal integration is performed at the pixel level in parallel for the whole array, and signal integration time can be programmed from 0.1 µs up to 100 ms in steps of 0.1 µs. The ROIC is designed to work with high-resistance detector arrays with pixel resistance values higher than 250 kΩ. The detector bias voltage can be programmed on-chip over a 2 V range with a resolution of 1 mV. The ROIC has a measured input referred noise of 260 µV rms at 300 K. The ROIC can be used to build a microbolometer infrared sensor with an NETD value below 100 mK using a microbolometer detector array fabrication technology with a high detector resistance value (≥ 250 KΩ), a high TCR value (≥ 2.5 % / K), and a sufficiently low pixel thermal conductance (Gth ≤ 20 nW / K). The ROIC uses a single 3.3 V supply voltage and dissipates less than 75 mW in the 1-output mode at 60 fps. MT3250BA is fabricated using a mixed-signal CMOS process on 200 mm CMOS wafers, and tested wafers are available with test data and wafer map. A USB based compact test electronics and software are available for quick evaluation of this new microbolometer ROIC.

CMOS VLSI Active-Pixel Sensor for Tracking

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

2004-01-01

An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The diagonal-switch and memory addresses would be generated by the on-chip controller. The memory array would be large enough to hold differential signals acquired from all 8 windows during a frame period. Following the rapid sampling from all the windows, the contents of the memory array would be read out sequentially by use of a capacitive transimpedance amplifier (CTIA) at a maximum data rate of 10 MHz. This data rate is compatible with an update rate of almost 10 Hz, even in full-frame operation

A Dynamic Range Enhanced Readout Technique with a Two-Step TDC for High Speed Linear CMOS Image Sensors.

PubMed

Gao, Zhiyuan; Yang, Congjie; Xu, Jiangtao; Nie, Kaiming

2015-11-06

This paper presents a dynamic range (DR) enhanced readout technique with a two-step time-to-digital converter (TDC) for high speed linear CMOS image sensors. A multi-capacitor and self-regulated capacitive trans-impedance amplifier (CTIA) structure is employed to extend the dynamic range. The gain of the CTIA is auto adjusted by switching different capacitors to the integration node asynchronously according to the output voltage. A column-parallel ADC based on a two-step TDC is utilized to improve the conversion rate. The conversion is divided into coarse phase and fine phase. An error calibration scheme is also proposed to correct quantization errors caused by propagation delay skew within -T(clk)~+T(clk). A linear CMOS image sensor pixel array is designed in the 0.13 μm CMOS process to verify this DR-enhanced high speed readout technique. The post simulation results indicate that the dynamic range of readout circuit is 99.02 dB and the ADC achieves 60.22 dB SNDR and 9.71 bit ENOB at a conversion rate of 2 MS/s after calibration, with 14.04 dB and 2.4 bit improvement, compared with SNDR and ENOB of that without calibration.

Comparison of a CCD and an APS for soft X-ray diffraction

NASA Astrophysics Data System (ADS)

Stewart, Graeme; Bates, R.; Blue, A.; Clark, A.; Dhesi, S. S.; Maneuski, D.; Marchal, J.; Steadman, P.; Tartoni, N.; Turchetta, R.

2011-12-01

We compare a new CMOS Active Pixel Sensor (APS) to a Princeton Instruments PIXIS-XO: 2048B Charge Coupled Device (CCD) with soft X-rays tested in a synchrotron beam line at the Diamond Light Source (DLS). Despite CCDs being established in the field of scientific imaging, APS are an innovative technology that offers advantages over CCDs. These include faster readout, higher operational temperature, in-pixel electronics for advanced image processing and reduced manufacturing cost. The APS employed was the Vanilla sensor designed by the MI3 collaboration and funded by an RCUK Basic technology grant. This sensor has 520 x 520 square pixels, of size 25 μm on each side. The sensor can operate at a full frame readout of up to 20 Hz. The sensor had been back-thinned, to the epitaxial layer. This was the first time that a back-thinned APS had been demonstrated at a beam line at DLS. In the synchrotron experiment soft X-rays with an energy of approximately 708 eV were used to produce a diffraction pattern from a permalloy sample. The pattern was imaged at a range of integration times with both sensors. The CCD had to be operated at a temperature of -55°C whereas the Vanilla was operated over a temperature range from 20°C to -10°C. We show that the APS detector can operate with frame rates up to two hundred times faster than the CCD, without excessive degradation of image quality. The signal to noise of the APS is shown to be the same as that of the CCD at identical integration times and the response is shown to be linear, with no charge blooming effects. The experiment has allowed a direct comparison of back thinned APS and CCDs in a real soft x-ray synchrotron experiment.

ALPIDE: the Monolithic Active Pixel Sensor for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Šuljić, M.

2016-11-01

The upgrade of the ALICE vertex detector, the Inner Tracking System (ITS), is scheduled to be installed during the next long shutdown period (2019-2020) of the CERN Large Hadron Collider (LHC) . The current ITS will be replaced by seven concentric layers of Monolithic Active Pixel Sensors (MAPS) with total active surface of ~10 m2, thus making ALICE the first LHC experiment implementing MAPS detector technology on a large scale. The ALPIDE chip, based on TowerJazz 180 nm CMOS Imaging Process, is being developed for this purpose. A particular process feature, the deep p-well, is exploited so the full CMOS logic can be implemented over the active sensor area without impinging on the deposited charge collection. ALPIDE is implemented on silicon wafers with a high resistivity epitaxial layer. A single chip measures 15 mm by 30 mm and contains half a million pixels distributed in 512 rows and 1024 columns. In-pixel circuitry features amplification, shaping, discrimination and multi-event buffering. The readout is hit driven i.e. only addresses of hit pixels are sent to the periphery. The upgrade of the ITS presents two different sets of requirements for sensors of the inner and of the outer layers due to the significantly different track density, radiation level and active detector surface. The ALPIDE chip fulfils the stringent requirements in both cases. The detection efficiency is higher than 99%, fake-hit probability is orders of magnitude lower than the required 10-6 and spatial resolution within the required 5 μm. This performance is to be maintained even after a total ionising does (TID) of 2.7 Mrad and a non-ionising energy loss (NIEL) fluence of 1.7 × 1013 1 MeV neq/cm2, which is above what is expected during the detector lifetime. Readout rate of 100 kHz is provided and the power density of ALPIDE is less than 40 mW/cm2. This contribution will provide a summary of the ALPIDE features and main test results.

COUGAR: a liquid nitrogen cooled InGaAs camera for astronomy and electro-luminescence

NASA Astrophysics Data System (ADS)

Van Bogget, Urbain; Vervenne, Vincent; Vinella, Rosa Maria; van der Zanden, Koen; Merken, Patrick; Vermeiren, Jan

2014-06-01

A SWIR FPA was designed and manufactured with 640*512 pixels, 20 μm pitch and InGaAs detectors for electroluminescence characterization and astronomical applications in the [0.9 - 1.55 μm] range. The FPA is mounted in a liquid nitrogen dewar and is operated by a low noise frontend electronics. One of the biggest problem in designing sensors and cameras for electro-luminescence measurements is the autoillumination of the detectors by the readout circuit. Besides of proper shielding of the detectors, the ROIC shall be optimized for minimal electrical activity during the integration time of the very-weak signals coming from the circuit under test. For this reason a SFD (or Source Follower per Detector) architecture (like in the Hawaii sensor) was selected, resulting in a background limited performance of the detector. The pixel has a (somewhat arbitrary) full well capacity of 400 000 e- and a sensitivity of 2.17 μV/e-. The dark signal is app. 1 e-/pixel/sec and with the appropriate Fowler sampling the dark noise lowers below 5 e-rms. The power consumption of the circuit is limited 2 mW, allowing more than 24 hours of operation on less than 1 l of liquid nitrogen. The FPA is equipped with 4 outputs (optional readout on one single channel) and is capable of achieving 3 frames per second. Due to the non-destructive readout it is possible to determine in a dynamic way the optimal integration time for each observation. The Cougar camera is equipped with ultra-low noise power supply and bias lines; the electronics contain also a 24 bit AD converter to fully exploit the sensitivity of the FPA and the camera.

An EUDET/AIDA Pixel Beam Telescope for Detector Development

NASA Astrophysics Data System (ADS)

Rubinskiy, I.; EUDET Consortium; AIDA Consortium

Ahigh resolution(σ< 2 μm) beam telescope based on monolithic active pixel sensors (MAPS) was developed within the EUDET collaboration. EUDET was a coordinated detector R&D programme for the future International Linear Collider providing test beam infrastructure to detector R&D groups. The telescope consists of six sensor planes with a pixel pitch of either 18.4 μm or 10 μmand canbe operated insidea solenoidal magnetic fieldofupto1.2T.Ageneral purpose cooling, positioning, data acquisition (DAQ) and offine data analysis tools are available for the users. The excellent resolution, readout rate andDAQintegration capabilities made the telescopea primary beam tests tool also for several CERN based experiments. In this report the performance of the final telescope is presented. The plans for an even more flexible telescope with three differentpixel technologies(ATLASPixel, Mimosa,Timepix) withinthenew European detector infrastructure project AIDA are presented.

CMOS minimal array

NASA Astrophysics Data System (ADS)

Janesick, James; Cheng, John; Bishop, Jeanne; Andrews, James T.; Tower, John; Walker, Jeff; Grygon, Mark; Elliot, Tom

2006-08-01

A high performance prototype CMOS imager is introduced. Test data is reviewed for different array formats that utilize 3T photo diode, 5T pinned photo diode and 6T photo gate CMOS pixel architectures. The imager allows several readout modes including progressive scan, snap and windowed operation. The new imager is built on different silicon substrates including very high resistivity epitaxial wafers for deep depletion operation. Data products contained in this paper focus on sensor's read noise, charge capacity, charge transfer efficiency, thermal dark current, RTS dark spikes, QE, pixel cross- talk and on-chip analog circuitry performance.

Overview of the Micro Vertex Detector for the P bar ANDA experiment

NASA Astrophysics Data System (ADS)

Calvo, Daniela; P¯ANDA MVD Group

2017-02-01

The P bar ANDA experiment is devoted to study interactions between cooled antiproton beams and a fixed target (the interaction rate is of about 107 events/s), hydrogen or heavier nuclei. The innermost tracker of P bar ANDA is the Micro Vertex Detector (MVD), specially designed to ensure the secondary vertex resolution for the discrimination of short-lived charmonium states. Hybrid epitaxial silicon pixels and double-sided silicon microstrips will equip four barrels, arranged around the interaction point, and six forward disks. The experiment features a triggerless architecture with a master clock of 160 MHz, therefore the MVD has to run with a continuous data transmission where the hits need precise timestamps. The energy loss of the particles in the sensor will be measured as well. The challenging request of a triggerless readout suggested to develop custom readout chips for both pixel (ToPix) and microstrip (PASTA) devices. To validate components and the triggerless readout architecture, prototypes have been built and tested. After an overview of the MVD, the technological aspects and performances of some prototypes will be reported.

A Medipix3 readout system based on the National Instruments FlexRIO card and using the LabVIEW programming environment

NASA Astrophysics Data System (ADS)

Horswell, I.; Gimenez, E. N.; Marchal, J.; Tartoni, N.

2011-01-01

Hybrid silicon photon-counting detectors are becoming standard equipment for many synchrotron applications. The latest in the Medipix family of read-out chips designed as part of the Medipix Collaboration at CERN is the Medipix3, which while maintaining the same pixel size as its predecessor, offers increased functionality and operating modes. The active area of the Medipix3 chip is approx 14mm × 14mm (containing 256 × 256 pixels) which is not large enough for many detector applications, this results in the need to tile many sensors and chips. As a first step on the road to develop such a detector, it was decided to build a prototype single chip readout system to gain the necessary experience in operating a Medipix3 chip. To provide a flexible learning and development tool it was decided to build an interface based on the recently released FlexRIOTM system from National Instruments and to use the LabVIEWTM graphical programming environment. This system and the achieved performance are described in this paper.

Fully 3D-Integrated Pixel Detectors for X-Rays

DOE PAGES

Deptuch, Grzegorz W.; Gabriella, Carini; Enquist, Paul; ...

2016-01-01

The vertically integrated photon imaging chip (VIPIC1) pixel detector is a stack consisting of a 500-μm-thick silicon sensor, a two-tier 34-μm-thick integrated circuit, and a host printed circuit board (PCB). The integrated circuit tiers were bonded using the direct bonding technology with copper, and each tier features 1-μm-diameter through-silicon vias that were used for connections to the sensor on one side, and to the host PCB on the other side. The 80-μm-pixel-pitch sensor was the direct bonding technology with nickel bonded to the integrated circuit. The stack was mounted on the board using Sn–Pb balls placed on a 320-μm pitch,more » yielding an entirely wire-bond-less structure. The analog front-end features a pulse response peaking at below 250 ns, and the power consumption per pixel is 25 μW. We successful completed the 3-D integration and have reported here. Additionally, all pixels in the matrix of 64 × 64 pixels were responding on well-bonded devices. Correct operation of the sparsified readout, allowing a single 153-ns bunch timing resolution, was confirmed in the tests on a synchrotron beam of 10-keV X-rays. An equivalent noise charge of 36.2 e - rms and a conversion gain of 69.5 μV/e - with 2.6 e - rms and 2.7 μV/e - rms pixel-to-pixel variations, respectively, were measured.« less

Results on 3D interconnection from AIDA WP3

NASA Astrophysics Data System (ADS)

Moser, Hans-Günther; AIDA-WP3

2016-09-01

From 2010 to 2014 the EU funded AIDA project established in one of its work packages (WP3) a network of groups working collaboratively on advanced 3D integration of electronic circuits and semiconductor sensors for applications in particle physics. The main motivation came from the severe requirements on pixel detectors for tracking and vertexing at future Particle Physics experiments at LHC, super-B factories and linear colliders. To go beyond the state-of-the-art, the main issues were studying low mass, high bandwidth applications, with radiation hardness capabilities, with low power consumption, offering complex functionality, with small pixel size and without dead regions. The interfaces and interconnects of sensors to electronic readout integrated circuits are a key challenge for new detector applications.

Hard-X-Ray/Soft-Gamma-Ray Imaging Sensor Assembly for Astronomy

NASA Technical Reports Server (NTRS)

Myers, Richard A.

2008-01-01

An improved sensor assembly has been developed for astronomical imaging at photon energies ranging from 1 to 100 keV. The assembly includes a thallium-doped cesium iodide scintillator divided into pixels and coupled to an array of high-gain avalanche photodiodes (APDs). Optionally, the array of APDs can be operated without the scintillator to detect photons at energies below 15 keV. The array of APDs is connected to compact electronic readout circuitry that includes, among other things, 64 independent channels for detection of photons in various energy ranges, up to a maximum energy of 100 keV, at a count rate up to 3 kHz. The readout signals are digitized and processed by imaging software that performs "on-the-fly" analysis. The sensor assembly has been integrated into an imaging spectrometer, along with a pair of coded apertures (Fresnel zone plates) that are used in conjunction with the pixel layout to implement a shadow-masking technique to obtain relatively high spatial resolution without having to use extremely small pixels. Angular resolutions of about 20 arc-seconds have been measured. Thus, for example, the imaging spectrometer can be used to (1) determine both the energy spectrum of a distant x-ray source and the angular deviation of the source from the nominal line of sight of an x-ray telescope in which the spectrometer is mounted or (2) study the spatial and temporal development of solar flares, repeating - ray bursters, and other phenomena that emit transient radiation in the hard-x-ray/soft- -ray region of the electromagnetic spectrum.

TES-Based X-Ray Microcalorimeter Performances Under AC Bias and FDM for Athena

NASA Technical Reports Server (NTRS)

Akamatsu, H.; Gottardi, L.; de Vries, C. P.; Adams, J. S.; Bandler, S. R.; Bruijn, M. P.; Chervenak, J. A.; Eckart, M. E.; Finkbeiner, F. M.; Gao, J. R.;

Digital radiography using amorphous selenium: photoconductively activated switch (PAS) readout system.

PubMed

Reznik, Nikita; Komljenovic, Philip T; Germann, Stephen; Rowlands, John A

2008-03-01

A new amorphous selenium (a-Se) digital radiography detector is introduced. The proposed detector generates a charge image in the a-Se layer in a conventional manner, which is stored on electrode pixels at the surface of the a-Se layer. A novel method, called photoconductively activated switch (PAS), is used to read out the latent x-ray charge image. The PAS readout method uses lateral photoconduction at the a-Se surface which is a revolutionary modification of the bulk photoinduced discharge (PID) methods. The PAS method addresses and eliminates the fundamental weaknesses of the PID methods--long readout times and high readout noise--while maintaining the structural simplicity and high resolution for which PID optical readout systems are noted. The photoconduction properties of the a-Se surface were investigated and the geometrical design for the electrode pixels for a PAS radiography system was determined. This design was implemented in a single pixel PAS evaluation system. The results show that the PAS x-ray induced output charge signal was reproducible and depended linearly on the x-ray exposure in the diagnostic exposure range. Furthermore, the readout was reasonably rapid (10 ms for pixel discharge). The proposed detector allows readout of half a pixel row at a time (odd pixels followed by even pixels), thus permitting the readout of a complete image in 30 s for a 40 cm x 40 cm detector with the potential of reducing that time by using greater readout light intensity. This demonstrates that a-Se based x-ray detectors using photoconductively activated switches could form a basis for a practical integrated digital radiography system.

Performance of a Medipix3RX spectroscopic pixel detector with a high resistivity gallium arsenide sensor.

PubMed

Hamann, Elias; Koenig, Thomas; Zuber, Marcus; Cecilia, Angelica; Tyazhev, Anton; Tolbanov, Oleg; Procz, Simon; Fauler, Alex; Baumbach, Tilo; Fiederle, Michael

2015-03-01

High resistivity gallium arsenide is considered a suitable sensor material for spectroscopic X-ray imaging detectors. These sensors typically have thicknesses between a few hundred μm and 1 mm to ensure a high photon detection efficiency. However, for small pixel sizes down to several tens of μm, an effect called charge sharing reduces a detector's spectroscopic performance. The recently developed Medipix3RX readout chip overcomes this limitation by implementing a charge summing circuit, which allows the reconstruction of the full energy information of a photon interaction in a single pixel. In this work, we present the characterization of the first Medipix3RX detector assembly with a 500 μm thick high resistivity, chromium compensated gallium arsenide sensor. We analyze its properties and demonstrate the functionality of the charge summing mode by means of energy response functions recorded at a synchrotron. Furthermore, the imaging properties of the detector, in terms of its modulation transfer functions and signal-to-noise ratios, are investigated. After more than one decade of attempts to establish gallium arsenide as a sensor material for photon counting detectors, our results represent a breakthrough in obtaining detector-grade material. The sensor we introduce is therefore suitable for high resolution X-ray imaging applications.

Development of Position-Sensitive Magnetic Calorimeters for X-Ray Astronomy

NASA Technical Reports Server (NTRS)

Bandler, SImon; Stevenson, Thomas; Hsieh, Wen-Ting

2011-01-01

Metallic magnetic calorimeters (MMC) are one of the most promising devices to provide very high energy resolution needed for future astronomical x-ray spectroscopy. MMC detectors can be built to large detector arrays having thousands of pixels. Position-sensitive magnetic (PoSM) microcalorimeters consist of multiple absorbers thermally coupled to one magnetic micro calorimeter. Each absorber element has a different thermal coupling to the MMC, resulting in a distribution of different pulse shapes and enabling position discrimination between the absorber elements. PoSMs therefore achieve the large focal plane area with fewer number of readout channels without compromising spatial sampling. Excellent performance of PoSMs was achieved by optimizing the designs of key parameters such as the thermal conductance among the absorbers, magnetic sensor, and heat sink, as well as the absorber heat capacities. Micro fab ri - cation techniques were developed to construct four-absorber PoSMs, in which each absorber consists of a two-layer composite of bismuth and gold. The energy resolution (FWHM full width at half maximum) was measured to be better than 5 eV at 6 keV x-rays for all four absorbers. Position determination was demonstrated with pulse-shape discrimination, as well as with pulse rise time. X-ray microcalorimeters are usually designed to thermalize as quickly as possible to avoid degradation in energy resolution from position dependence to the pulse shapes. Each pixel consists of an absorber and a temperature sensor, both decoupled from the cold bath through a weak thermal link. Each pixel requires a separate readout channel; for instance, with a SQUID (superconducting quantum interference device). For future astronomy missions where thousands to millions of resolution elements are required, having an individual SQUID readout channel for each pixel becomes difficult. One route to attaining these goals is a position-sensitive detector in which a large continuous or pixilated array of x-ray absorbers shares fewer numbers of temperature sensors. A means of discriminating the signals from different absorber positions, however, needs to be built into the device for each sensor. The design concept for the device is such that the shape of the temperature pulse with time depends on the location of the absorber. This inherent position sensitivity of the signal is then analyzed to determine the location of the event precisely, effectively yielding one device with many sub-pixels. With such devices, the total number of electronic channels required to read out a given number of pixels is significantly reduced. PoSMs were developed that consist of four discrete absorbers connected to a single magnetic sensor. The design concept can be extended to more than four absorbers per sensor. The thermal conductance between the sensor and each absorber is different by design and consequently, the pulse shapes are different depending upon which absorber the xrays are received, allowing position discrimination. A magnetic sensor was used in which a paramagnetic Au:Er temperature-sensitive material is located in a weak magnetic field. Deposition of energy from an x-ray photon causes an increase in temperature, which leads to a change of magnetization of the paramagnetic sensor, which is subsequently read out using a low noise dc-SQUID. The PoSM microcalorimeters are fully microfabricated: the Au:Er sensor is located above the meander, with a thin insulation gap in between. For this position-sensitive device, four electroplated absorbers are thermally linked to the sensor via heat links of different thermal conductance. One pixel is identical to that of a single-pixel design, consisting of an overhanging absorber fabricated directly on top of the sensor. It is therefore very strongly thermally coupled to it. The three other absorbers are supported directly on a silicon-nitride membrane. These absorbers are thermally coupled to the sensor via Ti (5 nm)/Au250 nm) metal links. The strength of the links is parameterized by the number of gold squares making up the link. For detector performance, experimentally different pulse-shapes were demonstrated with 6 keV x-rays, which clearly show different rise times for different absorber positions. For energy resolution measurement, the PoSM was operated at 32 mK with an applied field that was generated using a persistent current of 50 mA. Over the four pixels, energy resolution ranges from 4.4 to 4.7 eV were demonstrated.

Code-division-multiplexed readout of large arrays of TES microcalorimeters

NASA Astrophysics Data System (ADS)

Morgan, K. M.; Alpert, B. K.; Bennett, D. A.; Denison, E. V.; Doriese, W. B.; Fowler, J. W.; Gard, J. D.; Hilton, G. C.; Irwin, K. D.; Joe, Y. I.; O'Neil, G. C.; Reintsema, C. D.; Schmidt, D. R.; Ullom, J. N.; Swetz, D. S.

2016-09-01

Code-division multiplexing (CDM) offers a path to reading out large arrays of transition edge sensor (TES) X-ray microcalorimeters with excellent energy and timing resolution. We demonstrate the readout of X-ray TESs with a 32-channel flux-summed code-division multiplexing circuit based on superconducting quantum interference device (SQUID) amplifiers. The best detector has energy resolution of 2.28 ± 0.12 eV FWHM at 5.9 keV and the array has mean energy resolution of 2.77 ± 0.02 eV over 30 working sensors. The readout channels are sampled sequentially at 160 ns/row, for an effective sampling rate of 5.12 μs/channel. The SQUID amplifiers have a measured flux noise of 0.17 μΦ0/√Hz (non-multiplexed, referred to the first stage SQUID). The multiplexed noise level and signal slew rate are sufficient to allow readout of more than 40 pixels per column, making CDM compatible with requirements outlined for future space missions. Additionally, because the modulated data from the 32 SQUID readout channels provide information on each X-ray event at the row rate, our CDM architecture allows determination of the arrival time of an X-ray event to within 275 ns FWHM with potential benefits in experiments that require detection of near-coincident events.

Investigation of image distortion due to MCP electronic readout misalignment and correction via customized GUI application

NASA Astrophysics Data System (ADS)

Vitucci, G.; Minniti, T.; Tremsin, A. S.; Kockelmann, W.; Gorini, G.

2018-04-01

The MCP-based neutron counting detector is a novel device that allows high spatial resolution and time-resolved neutron radiography and tomography with epithermal, thermal and cold neutrons. Time resolution is possible by the high readout speeds of ~ 1200 frames/sec, allowing high resolution event counting with relatively high rates without spatial resolution degradation due to event overlaps. The electronic readout is based on a Timepix sensor, a CMOS pixel readout chip developed at CERN. Currently, a geometry of a quad Timepix detector is used with an active format of 28 × 28 mm2 limited by the size of the Timepix quad (2 × 2 chips) readout. Measurements of a set of high-precision micrometers test samples have been performed at the Imaging and Materials Science & Engineering (IMAT) beamline operating at the ISIS spallation neutron source (U.K.). The aim of these experiments was the full characterization of the chip misalignment and of the gaps between each pad in the quad Timepix sensor. Such misalignment causes distortions of the recorded shape of the sample analyzed. We present in this work a post-processing image procedure that considers and corrects these effects. Results of the correction will be discussed and the efficacy of this method evaluated.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

1995-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2003-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2004-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

A pixelated charge readout for Liquid Argon Time Projection Chambers

NASA Astrophysics Data System (ADS)

Asaadi, J.; Auger, M.; Ereditato, A.; Goeldi, D.; Hänni, R.; Kose, U.; Kreslo, I.; Lorca, D.; Luethi, M.; von Rohr, C. Rudolf; Sinclair, J.; Stocker, F.; Tognina, C.; Weber, M.

2018-02-01

Liquid Argon Time Projection Chambers (LArTPCs) are ideally suited to perform long-baseline neutrino experiments aiming to measure CP violation in the lepton sector, and determine the ordering of the three neutrino mass eigenstates. LArTPCs have used projective wire readouts for charge detection since their conception in 1977. However, wire readouts are notoriously fragile and therefore a limiting factor in the design of any large mass detectors. Furthermore, a wire readout also introduces intrinsic ambiguities in event reconstruction. Within the ArgonCube concept—the liquid argon component of the DUNE near detector—we are developing a pixelated charge readout for LArTPCs. Pixelated charge readout systems represent the single largest advancement in the sensitivity of LArTPCs. They are mechanically robust and provide direct 3D readout, serving to minimise reconstruction ambiguities, enabling more advanced triggers, further reducing event pile-up and improving background rejection. This article presents first results from a pixelated LArTPC prototype built and operated in Bern.

A noiseless, kHz frame rate imaging detector for AO wavefront sensors based on MCPs read out with the Medipix2 CMOS pixel chip

NASA Astrophysics Data System (ADS)

Vallerga, J. V.; McPhate, J. B.; Tremsin, A. S.; Siegmund, O. H. W.; Mikulec, B.; Clark, A. G.

2004-12-01

Future wavefront sensors in adaptive optics (AO) systems for the next generation of large telescopes (> 30 m diameter) will require large formats (512x512) , kHz frame rates, low readout noise (<3 electrons) and high optical QE. The current generation of CCDs cannot achieve the first three of these specifications simultaneously. We present a detector scheme that can meet the first three requirements with an optical QE > 40%. This detector consists of a vacuum tube with a proximity focused GaAs photocathode whose photoelectrons are amplified by microchannel plates and the resulting output charge cloud counted by a pixelated CMOS application specific integrated circuit (ASIC) called the Medipix2 (http://medipix.web.cern.ch/MEDIPIX/). Each 55 micron square pixel of the Medipix2 chip has an amplifier, discriminator and 14 bit counter and the 256x256 array can be read out in 287 microseconds. The chip is 3 side abuttable so a 512x512 array is feasible in one vacuum tube. We will present the first results with an open-faced, demountable version of the detector where we have mounted a pair of MCPs 500 microns above a Medipix2 readout inside a vacuum chamber and illuminated it with UV light. The results include: flat field response, spatial resolution, spatial linearity on the sub-pixel level and global event counting rate. We will also discuss the vacuum tube design and the fabrication issues associated with the Medipix2 surviving the tube making process.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deptuch, Grzegorz W.; Gabriella, Carini; Enquist, Paul

The vertically integrated photon imaging chip (VIPIC1) pixel detector is a stack consisting of a 500-μm-thick silicon sensor, a two-tier 34-μm-thick integrated circuit, and a host printed circuit board (PCB). The integrated circuit tiers were bonded using the direct bonding technology with copper, and each tier features 1-μm-diameter through-silicon vias that were used for connections to the sensor on one side, and to the host PCB on the other side. The 80-μm-pixel-pitch sensor was the direct bonding technology with nickel bonded to the integrated circuit. The stack was mounted on the board using Sn–Pb balls placed on a 320-μm pitch,more » yielding an entirely wire-bond-less structure. The analog front-end features a pulse response peaking at below 250 ns, and the power consumption per pixel is 25 μW. We successful completed the 3-D integration and have reported here. Additionally, all pixels in the matrix of 64 × 64 pixels were responding on well-bonded devices. Correct operation of the sparsified readout, allowing a single 153-ns bunch timing resolution, was confirmed in the tests on a synchrotron beam of 10-keV X-rays. An equivalent noise charge of 36.2 e - rms and a conversion gain of 69.5 μV/e - with 2.6 e - rms and 2.7 μV/e - rms pixel-to-pixel variations, respectively, were measured.« less

Flagging and Correction of Pattern Noise in the Kepler Focal Plane Array

NASA Technical Reports Server (NTRS)

Kolodziejczak, Jeffery J.; Caldwell, Douglas A.; VanCleve, Jeffrey E.; Clarke, Bruce D.; Jenkins, Jon M.; Cote, Miles T.; Klaus, Todd C.; Argabright, Vic S.

2010-01-01

In order for Kepler to achieve its required less than 20 PPM photometric precision for magnitude 12 and brighter stars, instrument-induced variations in the CCD readout bias pattern (our "2D black image"), which are either fixed or slowly varying in time, must be identified and the corresponding pixels either corrected or removed from further data processing. The two principle sources of these readout bias variations are crosstalk between the 84 science CCDs and the 4 fine guidance sensor (FGS) CCDs and a high frequency amplifier oscillation on less than 40% of the CCD readout channels. The crosstalk produces a synchronous pattern in the 2D black image with time-variation observed in less than 10% of individual pixel bias histories. We will describe a method of removing the crosstalk signal using continuously-collected data from masked and over-clocked image regions (our "collateral data"), and occasionally-collected full-frame images and reverse-clocked readout signals. We use this same set to detect regions affected by the oscillating amplifiers. The oscillations manifest as time-varying moir pattern and rolling bands in the affected channels. Because this effect reduces the performance in only a small fraction of the array at any given time, we have developed an approach for flagging suspect data. The flags will provide the necessary means to resolve any potential ambiguity between instrument-induced variations and real photometric variations in a target time series. We will also evaluate the effectiveness of these techniques using flight data from background and selected target pixels.

NGST fine guidance sensor

NASA Astrophysics Data System (ADS)

Rowlands, Neil; Hutchings, John; Murowinski, Richard G.; Alexander, Russ

2003-03-01

Instrumentation for the Next Generation Space Telescope (NGST) is currently in the Phase A definition stage. We have developed a concept for the NGST Fine Guidance Sensor or FGS. The FGS is a detector array based imager which resides in the NGST focal plane. We report here on tradeoff studies aimed at defining an overall configuration of the FGS which will meet the performance and interface requirements. A key performance requirement is a noise equivalent angle of 3 milli-arcseconds to be achieved with 95% probability for any pointing of the observatory in the celestial sphere. A key interface requirement is compatibility with the architecture of the Integrated Science Instrument Module (ISIM). The concept developed consists of two independent and redundant FGS modules, each with a 4' x 2' field of view covered by two 2048 x 2048 infrared detector arrays, providing 60 milli-arcsecond sampling. Performance modeling supporting the choice of this architecture and the trade space considered is presented. Each module has a set of readout electronics which perform star detection, pixel-by-pixel correction, and in fine guiding mode, centroid calculation. These readout electronics communicate with the ISIM Command &Data Handling Units where the FGS control software is based. Rationale for this choice of architecture is also presented.

Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process

NASA Astrophysics Data System (ADS)

Zhang, Ying; Zhu, Hongbo; Zhang, Liang; Fu, Min

2016-09-01

The proposed Circular Electron Positron Collider (CEPC) will be primarily aimed for precision measurements of the discovered Higgs boson. Its innermost vertex detector, which will play a critical role in heavy-flavor tagging, must be constructed with fine-pitched silicon pixel sensors with low power consumption and fast readout. CMOS pixel sensor (CPS), as one of the most promising candidate technologies, has already demonstrated its excellent performance in several high energy physics experiments. Therefore it has been considered for R&D for the CEPC vertex detector. In this paper, we present the preliminary studies to improve the collected signal charge over the equivalent input capacitance ratio (Q / C), which will be crucial to reduce the analog power consumption. We have performed detailed 3D device simulation and evaluated potential impacts from diode geometry, epitaxial layer properties and non-ionizing radiation damage. We have proposed a new approach to improve the treatment of the boundary conditions in simulation. Along with the TCAD simulation, we have designed the exploratory prototype utilizing the TowerJazz 0.18 μm CMOS imaging sensor process and we will verify the simulation results with future measurements.

Optimising the multiplex factor of the frequency domain multiplexed readout of the TES-based microcalorimeter imaging array for the X-IFU instrument on the Athena x-ray observatory

NASA Astrophysics Data System (ADS)

van der Kuur, J.; Gottardi, L. G.; Akamatsu, H.; van Leeuwen, B. J.; den Hartog, R.; Haas, D.; Kiviranta, M.; Jackson, B. J.

2016-07-01

Athena is a space-based X-ray observatory intended for exploration of the hot and energetic universe. One of the science instruments on Athena will be the X-ray Integrated Field Unit (X-IFU), which is a cryogenic X-ray spectrometer, based on a large cryogenic imaging array of Transition Edge Sensors (TES) based microcalorimeters operating at a temperature of 100mK. The imaging array consists of 3800 pixels providing 2.5 eV spectral resolution, and covers a field of view with a diameter of of 5 arc minutes. Multiplexed readout of the cryogenic microcalorimeter array is essential to comply with the cooling power and complexity constraints on a space craft. Frequency domain multiplexing has been under development for the readout of TES-based detectors for this purpose, not only for the X-IFU detector arrays but also for TES-based bolometer arrays for the Safari instrument of the Japanese SPICA observatory. This paper discusses the design considerations which are applicable to optimise the multiplex factor within the boundary conditions as set by the space craft. More specifically, the interplay between the science requirements such as pixel dynamic range, pixel speed, and cross talk, and the space craft requirements such as the power dissipation budget, available bandwidth, and electromagnetic compatibility will be discussed.

Modeling and analysis of hybrid pixel detector deficiencies for scientific applications

NASA Astrophysics Data System (ADS)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

2015-08-01

Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long. A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to clock distribution etc. can be accurately analyzed to determine ROIC architectural viability and bottlenecks. Hence the impact of the detector parameters on the scientific application can be studied.

A bio-image sensor for simultaneous detection of multi-neurotransmitters.

PubMed

Lee, You-Na; Okumura, Koichi; Horio, Tomoko; Iwata, Tatsuya; Takahashi, Kazuhiro; Hattori, Toshiaki; Sawada, Kazuaki

2018-03-01

We report here a new bio-image sensor for simultaneous detection of spatial and temporal distribution of multi-neurotransmitters. It consists of multiple enzyme-immobilized membranes on a 128 × 128 pixel array with read-out circuit. Apyrase and acetylcholinesterase (AChE), as selective elements, are used to recognize adenosine 5'-triphosphate (ATP) and acetylcholine (ACh), respectively. To enhance the spatial resolution, hydrogen ion (H + ) diffusion barrier layers are deposited on top of the bio-image sensor and demonstrated their prevention capability. The results are used to design the space among enzyme-immobilized pixels and the null H + sensor to minimize the undesired signal overlap by H + diffusion. Using this bio-image sensor, we can obtain H + diffusion-independent imaging of concentration gradients of ATP and ACh in real-time. The sensing characteristics, such as sensitivity and detection of limit, are determined experimentally. With the proposed bio-image sensor the possibility exists for customizable monitoring of the activities of various neurochemicals by using different kinds of proton-consuming or generating enzymes. Copyright © 2017 Elsevier B.V. All rights reserved.

Characterisation of novel thin n-in-p planar pixel modules for the ATLAS Inner Tracker upgrade

NASA Astrophysics Data System (ADS)

Beyer, J.-C.; La Rosa, A.; Macchiolo, A.; Nisius, R.; Savic, N.; Taibah, R.

2018-01-01

In view of the high luminosity phase of the LHC (HL-LHC) to start operation around 2026, a major upgrade of the tracker system for the ATLAS experiment is in preparation. The expected neutron equivalent fluence of up to 2.4×1016 1 MeV neq./cm2 at the innermost layer of the pixel detector poses the most severe challenge. Thanks to their low material budget and high charge collection efficiency after irradiation, modules made of thin planar pixel sensors are promising candidates to instrument these layers. To optimise the sensor layout for the decreased pixel cell size of 50×50 μm2, TCAD device simulations are being performed to investigate the charge collection efficiency before and after irradiation. In addition, sensors of 100-150 μm thickness, interconnected to FE-I4 read-out chips featuring the previous generation pixel cell size of 50×250 μm2, are characterised with testbeams at the CERN-SPS and DESY facilities. The performance of sensors with various designs, irradiated up to a fluence of 1×1016 neq./cm2, is compared in terms of charge collection and hit efficiency. A replacement of the two innermost pixel layers is foreseen during the lifetime of HL-LHC . The replacement will require several months of intervention, during which the remaining detector modules cannot be cooled. They are kept at room temperature, thus inducing an annealing. The performance of irradiated modules will be investigated with testbeam campaigns and the method of accelerated annealing at higher temperatures.

Development of a 750x750 pixels CMOS imager sensor for tracking applications

NASA Astrophysics Data System (ADS)

Larnaudie, Franck; Guardiola, Nicolas; Saint-Pé, Olivier; Vignon, Bruno; Tulet, Michel; Davancens, Robert; Magnan, Pierre; Corbière, Franck; Martin-Gonthier, Philippe; Estribeau, Magali

2017-11-01

Solid-state optical sensors are now commonly used in space applications (navigation cameras, astronomy imagers, tracking sensors...). Although the charge-coupled devices are still widely used, the CMOS image sensor (CIS), which performances are continuously improving, is a strong challenger for Guidance, Navigation and Control (GNC) systems. This paper describes a 750x750 pixels CMOS image sensor that has been specially designed and developed for star tracker and tracking sensor applications. Such detector, that is featuring smart architecture enabling very simple and powerful operations, is built using the AMIS 0.5μm CMOS technology. It contains 750x750 rectangular pixels with 20μm pitch. The geometry of the pixel sensitive zone is optimized for applications based on centroiding measurements. The main feature of this device is the on-chip control and timing function that makes the device operation easier by drastically reducing the number of clocks to be applied. This powerful function allows the user to operate the sensor with high flexibility: measurement of dark level from masked lines, direct access to the windows of interest… A temperature probe is also integrated within the CMOS chip allowing a very precise measurement through the video stream. A complete electro-optical characterization of the sensor has been performed. The major parameters have been evaluated: dark current and its uniformity, read-out noise, conversion gain, Fixed Pattern Noise, Photo Response Non Uniformity, quantum efficiency, Modulation Transfer Function, intra-pixel scanning. The characterization tests are detailed in the paper. Co60 and protons irradiation tests have been also carried out on the image sensor and the results are presented. The specific features of the 750x750 image sensor such as low power CMOS design (3.3V, power consumption<100mW), natural windowing (that allows efficient and robust tracking algorithms), simple proximity electronics (because of the on-chip control and timing function) enabling a high flexibility architecture, make this imager a good candidate for high performance tracking applications.

Self-amplified CMOS image sensor using a current-mode readout circuit

NASA Astrophysics Data System (ADS)

Santos, Patrick M.; de Lima Monteiro, Davies W.; Pittet, Patrick

2014-05-01

The feature size of the CMOS processes decreased during the past few years and problems such as reduced dynamic range have become more significant in voltage-mode pixels, even though the integration of more functionality inside the pixel has become easier. This work makes a contribution on both sides: the possibility of a high signal excursion range using current-mode circuits together with functionality addition by making signal amplification inside the pixel. The classic 3T pixel architecture was rebuild with small modifications to integrate a transconductance amplifier providing a current as an output. The matrix with these new pixels will operate as a whole large transistor outsourcing an amplified current that will be used for signal processing. This current is controlled by the intensity of the light received by the matrix, modulated pixel by pixel. The output current can be controlled by the biasing circuits to achieve a very large range of output signal levels. It can also be controlled with the matrix size and this permits a very high degree of freedom on the signal level, observing the current densities inside the integrated circuit. In addition, the matrix can operate at very small integration times. Its applications would be those in which fast imaging processing, high signal amplification are required and low resolution is not a major problem, such as UV image sensors. Simulation results will be presented to support: operation, control, design, signal excursion levels and linearity for a matrix of pixels that was conceived using this new concept of sensor.

MAPS development for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Yang, P.; Aglieri, G.; Cavicchioli, C.; Chalmet, P. L.; Chanlek, N.; Collu, A.; Gao, C.; Hillemanns, H.; Junique, A.; Kofarago, M.; Keil, M.; Kugathasan, T.; Kim, D.; Kim, J.; Lattuca, A.; Marin Tobon, C. A.; Marras, D.; Mager, M.; Martinengo, P.; Mazza, G.; Mugnier, H.; Musa, L.; Puggioni, C.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Siddhanta, S.; Usai, G.; van Hoorne, J. W.; Yi, J.

2015-03-01

Monolithic Active Pixel Sensors (MAPS) offer the possibility to build pixel detectors and tracking layers with high spatial resolution and low material budget in commercial CMOS processes. Significant progress has been made in the field of MAPS in recent years, and they are now considered for the upgrades of the LHC experiments. This contribution will focus on MAPS detectors developed for the ALICE Inner Tracking System (ITS) upgrade and manufactured in the TowerJazz 180 nm CMOS imaging sensor process on wafers with a high resistivity epitaxial layer. Several sensor chip prototypes have been developed and produced to optimise both charge collection and readout circuitry. The chips have been characterised using electrical measurements, radioactive sources and particle beams. The tests indicate that the sensors satisfy the ALICE requirements and first prototypes with the final size of 1.5 × 3 cm2 have been produced in the first half of 2014. This contribution summarises the characterisation measurements and presents first results from the full-scale chips.

Modeling Charge Collection in Detector Arrays

NASA Technical Reports Server (NTRS)

Hardage, Donna (Technical Monitor); Pickel, J. C.

2003-01-01

A detector array charge collection model has been developed for use as an engineering tool to aid in the design of optical sensor missions for operation in the space radiation environment. This model is an enhancement of the prototype array charge collection model that was developed for the Next Generation Space Telescope (NGST) program. The primary enhancements were accounting for drift-assisted diffusion by Monte Carlo modeling techniques and implementing the modeling approaches in a windows-based code. The modeling is concerned with integrated charge collection within discrete pixels in the focal plane array (FPA), with high fidelity spatial resolution. It is applicable to all detector geometries including monolithc charge coupled devices (CCDs), Active Pixel Sensors (APS) and hybrid FPA geometries based on a detector array bump-bonded to a readout integrated circuit (ROIC).

Backside illuminated CMOS-TDI line scanner for space applications

NASA Astrophysics Data System (ADS)

Cohen, O.; Ben-Ari, N.; Nevo, I.; Shiloah, N.; Zohar, G.; Kahanov, E.; Brumer, M.; Gershon, G.; Ofer, O.

2017-09-01

A new multi-spectral line scanner CMOS image sensor is reported. The backside illuminated (BSI) image sensor was designed for continuous scanning Low Earth Orbit (LEO) space applications including A custom high quality CMOS Active Pixels, Time Delayed Integration (TDI) mechanism that increases the SNR, 2-phase exposure mechanism that increases the dynamic Modulation Transfer Function (MTF), very low power internal Analog to Digital Converters (ADC) with resolution of 12 bit per pixel and on chip controller. The sensor has 4 independent arrays of pixels where each array is arranged in 2600 TDI columns with controllable TDI depth from 8 up to 64 TDI levels. A multispectral optical filter with specific spectral response per array is assembled at the package level. In this paper we briefly describe the sensor design and present some electrical and electro-optical recent measurements of the first prototypes including high Quantum Efficiency (QE), high MTF, wide range selectable Full Well Capacity (FWC), excellent linearity of approximately 1.3% in a signal range of 5-85% and approximately 1.75% in a signal range of 2-95% out of the signal span, readout noise of approximately 95 electrons with 64 TDI levels, negligible dark current and power consumption of less than 1.5W total for 4 bands sensor at all operation conditions .

Increasing Linear Dynamic Range of a CMOS Image Sensor

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2007-01-01

A generic design and a corresponding operating sequence have been developed for increasing the linear-response dynamic range of a complementary metal oxide/semiconductor (CMOS) image sensor. The design provides for linear calibrated dual-gain pixels that operate at high gain at a low signal level and at low gain at a signal level above a preset threshold. Unlike most prior designs for increasing dynamic range of an image sensor, this design does not entail any increase in noise (including fixed-pattern noise), decrease in responsivity or linearity, or degradation of photometric calibration. The figure is a simplified schematic diagram showing the circuit of one pixel and pertinent parts of its column readout circuitry. The conventional part of the pixel circuit includes a photodiode having a small capacitance, CD. The unconventional part includes an additional larger capacitance, CL, that can be connected to the photodiode via a transfer gate controlled in part by a latch. In the high-gain mode, the signal labeled TSR in the figure is held low through the latch, which also helps to adapt the gain on a pixel-by-pixel basis. Light must be coupled to the pixel through a microlens or by back illumination in order to obtain a high effective fill factor; this is necessary to ensure high quantum efficiency, a loss of which would minimize the efficacy of the dynamic- range-enhancement scheme. Once the level of illumination of the pixel exceeds the threshold, TSR is turned on, causing the transfer gate to conduct, thereby adding CL to the pixel capacitance. The added capacitance reduces the conversion gain, and increases the pixel electron-handling capacity, thereby providing an extension of the dynamic range. By use of an array of comparators also at the bottom of the column, photocharge voltages on sampling capacitors in each column are compared with a reference voltage to determine whether it is necessary to switch from the high-gain to the low-gain mode. Depending upon the built-in offset in each pixel and in each comparator, the point at which the gain change occurs will be different, adding gain-dependent fixed pattern noise in each pixel. The offset, and hence the fixed pattern noise, is eliminated by sampling the pixel readout charge four times by use of four capacitors (instead of two such capacitors as in conventional design) connected to the bottom of the column via electronic switches SHS1, SHR1, SHS2, and SHR2, respectively, corresponding to high and low values of the signals TSR and RST. The samples are combined in an appropriate fashion to cancel offset-induced errors, and provide spurious-free imaging with extended dynamic range.

DEPFET pixel detector for future e-e+ experiments

NASA Astrophysics Data System (ADS)

Boronat, M.; DEPFET Collaboration

2016-04-01

The DEPFET Collaboration develops highly granular, ultra-thin pixel detectors for outstanding vertex reconstruction at future e+e- collider experiments. A DEPFET sensor provides, simultaneously, position sensitive detector capabilities and in-pixel amplification by the integration of a field effect transistor on a fully depleted silicon bulk. The characterization of the latest DEPFET prototypes has proven that a comfortable signal to noise ratio and excellent single point resolution can be achieved for a sensor thickness of 50 μm. A complete detector concept is being developed for the Belle II experiment at the new Japanese super flavor factory. The close to Belle related final auxiliary ASICs have been produced and found to operate a DEPFET pixel detector of the latest generation with the Belle II required read-out speed. DEPFET is not only the technology of choice for the Belle II vertex detector, but also a solid candidate for the International Linear Collider (ILC). Therefore, in this paper, the status of DEPFET R&D project is reviewed in the light of the requirements of the vertex detector at a future e+e- collider.

Angular sensitivity of modeled scientific silicon charge-coupled devices to initial electron direction

NASA Astrophysics Data System (ADS)

Plimley, Brian; Coffer, Amy; Zhang, Yigong; Vetter, Kai

2016-08-01

Previously, scientific silicon charge-coupled devices (CCDs) with 10.5-μm pixel pitch and a thick (650 μm), fully depleted bulk have been used to measure gamma-ray-induced fast electrons and demonstrate electron track Compton imaging. A model of the response of this CCD was also developed and benchmarked to experiment using Monte Carlo electron tracks. We now examine the trade-off in pixel pitch and electronic noise. We extend our CCD response model to different pixel pitch and readout noise per pixel, including pixel pitch of 2.5 μm, 5 μm, 10.5 μm, 20 μm, and 40 μm, and readout noise from 0 eV/pixel to 2 keV/pixel for 10.5 μm pixel pitch. The CCD images generated by this model using simulated electron tracks are processed by our trajectory reconstruction algorithm. The performance of the reconstruction algorithm defines the expected angular sensitivity as a function of electron energy, CCD pixel pitch, and readout noise per pixel. Results show that our existing pixel pitch of 10.5 μm is near optimal for our approach, because smaller pixels add little new information but are subject to greater statistical noise. In addition, we measured the readout noise per pixel for two different device temperatures in order to estimate the effect of temperature on the reconstruction algorithm performance, although the readout is not optimized for higher temperatures. The noise in our device at 240 K increases the FWHM of angular measurement error by no more than a factor of 2, from 26° to 49° FWHM for electrons between 425 keV and 480 keV. Therefore, a CCD could be used for electron-track-based imaging in a Peltier-cooled device.

Pixel sensors with slim edges and small pitches for the CMS upgrades for HL-LHC

DOE PAGES

Vernieri, Caterina; Bolla, Gino; Rivera, Ryan; ...

2016-06-07

Here, planar n-in-n silicon detectors with small pitches and slim edges are being investigated for the innermost layers of tracking devices for the foreseen upgrades of the LHC experiments. Sensor prototypes compatible with the CMS readout, fabricated by Sintef, were tested in the laboratory and with a 120 GeV/c proton beam at the Fermilab test beam facility before and after irradiation with up to 2 × 10 15 neq/cm 2 fluence. Preliminary results of the data analysis are presented.

SiPM based readout system for PbWO4 crystals

NASA Astrophysics Data System (ADS)

Berra, A.; Bolognini, D.; Bonfanti, S.; Bonvicini, V.; Lietti, D.; Penzo, A.; Prest, M.; Stoppani, L.; Vallazza, E.

2013-08-01

Silicon PhotoMultipliers (SiPMs) consist of a matrix of small passively quenched silicon avalanche photodiodes operated in limited Geiger-mode (GM-APDs) and read out in parallel from a common output node. Each pixel (with a typical size in the 20-100 μm range) gives the same current response when hit by a photon; the SiPM output signal is the sum of the signals of all the pixels, which depends on the light intensity. The main advantages of SiPMs with respect to photomultiplier tubes (PMTs) are essentially the small dimensions, the insensitivity to magnetic fields and a low bias voltage. This contribution presents the performance of a SiPM based readout system for crystal calorimeters developed in the framework of the FACTOR/TWICE collaboration. The SiPM used for the test is a new device produced by FBK-irst which consists in a matrix of four sensors embedded in the same silicon substrate, called QUAD. The SiPM has been coupled to a lead tungstate crystal, an early-prototype version of the crystals developed for the electromagnetic calorimeter of the CMS experiment. New tests are foreseen using a complete module consisting of nine crystals, each one readout by two QUADs.

CCD image sensor induced error in PIV applications

NASA Astrophysics Data System (ADS)

Legrand, M.; Nogueira, J.; Vargas, A. A.; Ventas, R.; Rodríguez-Hidalgo, M. C.

2014-06-01

The readout procedure of charge-coupled device (CCD) cameras is known to generate some image degradation in different scientific imaging fields, especially in astrophysics. In the particular field of particle image velocimetry (PIV), widely extended in the scientific community, the readout procedure of the interline CCD sensor induces a bias in the registered position of particle images. This work proposes simple procedures to predict the magnitude of the associated measurement error. Generally, there are differences in the position bias for the different images of a certain particle at each PIV frame. This leads to a substantial bias error in the PIV velocity measurement (˜0.1 pixels). This is the order of magnitude that other typical PIV errors such as peak-locking may reach. Based on modern CCD technology and architecture, this work offers a description of the readout phenomenon and proposes a modeling for the CCD readout bias error magnitude. This bias, in turn, generates a velocity measurement bias error when there is an illumination difference between two successive PIV exposures. The model predictions match the experiments performed with two 12-bit-depth interline CCD cameras (MegaPlus ES 4.0/E incorporating the Kodak KAI-4000M CCD sensor with 4 megapixels). For different cameras, only two constant values are needed to fit the proposed calibration model and predict the error from the readout procedure. Tests by different researchers using different cameras would allow verification of the model, that can be used to optimize acquisition setups. Simple procedures to obtain these two calibration values are also described.

Studies of Avalanche Photodiodes (APDS) as Readout Devices for Scintillating Fibers for High Energy Gamma-Ray Astronomy Telescopes

NASA Technical Reports Server (NTRS)

Vasile, Stefan; Shera, Suzanne; Shamo, Denis

1998-01-01

New gamma ray and charged particle telescope designs based on scintillating fiber arrays could provide low cost, high resolution, lightweight, very large area and multi radiation length instrumentation for planned NASA space exploration. The scintillating fibers low visible light output requires readout sensors with single photon detection sensitivity and low noise. The sensitivity of silicon Avalanche Photodiodes (APDS) matches well the spectral output of the scintillating fibers. Moreover, APDs have demonstrated single photon capability. The global aim of our work is to make available to NASA a novel optical detector concept to be used as scintillating fiber readouts and meeting the requirements of the new generations of space-borne gamma ray telescopes. We proposed to evaluate the feasibility of using RMD's small area APDs ((mu)APD) as scintillating fiber readouts and to study possible alternative (mu)APD array configurations for space borne readout scintillating fiber systems, requiring several hundred thousand to one million channels. The evaluation has been conducted in accordance with the task description and technical specifications detailed in the NASA solicitation "Studies of Avalanche Photodiodes (APD as readout devices for scintillating fibers for High Energy Gamma-Ray Astronomy Telescopes" (#8-W-7-ES-13672NAIS) posted on October 23, 1997. The feasibility study we propose builds on recent developments of silicon APD arrays and light concentrators advances at RMD, Inc. and on more than 5 years of expertise in scintillating fiber detectors. In a previous program we carried out the initial research to develop a high resolution, small pixel, solid-state, silicon APD array which exhibited very high sensitivity in the UV-VIS spectrum. This (mu)APD array is operated in Geiger mode and results in high gain (greater than 10(exp 8)), extremely low noise, single photon detection capability, low quiescent power (less than 10 (mu)W/pixel for 30 micrometers sensitive area diameter) and output in the 1-5 volt range. If successful, this feasibility study will make possible the development of a scintillating fiber detector with unsurpassed sensitivity, extremely low power usage, a crucial factor of merit for space based sensors and telescopes.

Cameras for digital microscopy.

PubMed

Spring, Kenneth R

2013-01-01

This chapter reviews the fundamental characteristics of charge-coupled devices (CCDs) and related detectors, outlines the relevant parameters for their use in microscopy, and considers promising recent developments in the technology of detectors. Electronic imaging with a CCD involves three stages--interaction of a photon with the photosensitive surface, storage of the liberated charge, and readout or measurement of the stored charge. The most demanding applications in fluorescence microscopy may require as much as four orders of greater magnitude sensitivity. The image in the present-day light microscope is usually acquired with a CCD camera. The CCD is composed of a large matrix of photosensitive elements (often referred to as "pixels" shorthand for picture elements, which simultaneously capture an image over the entire detector surface. The light-intensity information for each pixel is stored as electronic charge and is converted to an analog voltage by a readout amplifier. This analog voltage is subsequently converted to a numerical value by a digitizer situated on the CCD chip, or very close to it. Several (three to six) amplifiers are required for each pixel, and to date, uniform images with a homogeneous background have been a problem because of the inherent difficulties of balancing the gain in all of the amplifiers. Complementary metal oxide semiconductor sensors also exhibit relatively high noise associated with the requisite high-speed switching. Both of these deficiencies are being addressed, and sensor performance is nearing that required for scientific imaging. Copyright © 1998 Elsevier Inc. All rights reserved.

Overview of the ATLAS Insertable B-Layer (IBL) Project

NASA Astrophysics Data System (ADS)

Kagan, M. A.

2014-06-01

The first upgrade for the Pixel Detector will be a new pixel layer which is currently under construction and will be installed during the first shutdown of the LHC machine, in 2013-14. The new detector, called the Insertable B-layer (IBL), will be installed between the existing Pixel Detector and a new, smaller radius beam-pipe. Two different silicon sensor technologies, planar n-in-n and 3D, will be used, connected with the new generation 130nm IBM CMOS FE-I4 readout chip via solder bump-bonds. A production quality control test bench was set up in the ATLAS inner detector assembly clean room to verify and rate the performance of the detector elements before integration around the beam-pipe. An overview of the IBL project, of the module design, the qualification for these sensor technologies, the integration quality control setups and recent results in the construction of this full scale new concept detector is discussed.

DEPFET detectors for future electron-positron colliders

NASA Astrophysics Data System (ADS)

Marinas, C.

2015-11-01

The DEPFET Collaboration develops highly granular, ultra-thin pixel detectors for outstanding vertex reconstruction at future electron-positron collider experiments. A DEPFET sensor, by the integration of a field effect transistor on a fully depleted silicon bulk, provides simultaneous position sensitive detector capabilities and in pixel amplification. The characterization of the latest DEPFET prototypes has proven that a adequate signal-to-noise ratio and excellent single point resolution can be achieved for a sensor thickness of 50 micrometers. The close to final auxiliary ASICs have been produced and found to operate a DEPFET pixel detector of the latest generation with the required read-out speed. A complete detector concept is being developed for the Belle II experiment at the new Japanese super flavor factory. DEPFET is not only the technology of choice for the Belle II vertex detector, but also a prime candidate for the ILC. Therefore, in this contribution, the status of DEPFET R&D project is reviewed in the light of the requirements of the vertex detector at a future electron-positron collider.

Indium antimonide large-format detector arrays

NASA Astrophysics Data System (ADS)

Davis, Mike; Greiner, Mark

2011-06-01

Large format infrared imaging sensors are required to achieve simultaneously high resolution and wide field of view image data. Infrared sensors are generally required to be cooled from room temperature to cryogenic temperatures in less than 10 min thousands of times during their lifetime. The challenge is to remove mechanical stress, which is due to different materials with different coefficients of expansion, over a very wide temperature range and at the same time, provide a high sensitivity and high resolution image data. These challenges are met by developing a hybrid where the indium antimonide detector elements (pixels) are unconnected islands that essentially float on a silicon substrate and form a near perfect match to the silicon read-out circuit. Since the pixels are unconnected and isolated from each other, the array is reticulated. This paper shows that the front side illuminated and reticulated element indium antimonide focal plane developed at L-3 Cincinnati Electronics are robust, approach background limited sensitivity limit, and provide the resolution expected of the reticulated pixel array.

CMOS Imaging of Pin-Printed Xerogel-Based Luminescent Sensor Microarrays.

PubMed

Yao, Lei; Yung, Ka Yi; Khan, Rifat; Chodavarapu, Vamsy P; Bright, Frank V

2010-12-01

We present the design and implementation of a luminescence-based miniaturized multisensor system using pin-printed xerogel materials which act as host media for chemical recognition elements. We developed a CMOS imager integrated circuit (IC) to image the luminescence response of the xerogel-based sensor array. The imager IC uses a 26 × 20 (520 elements) array of active pixel sensors and each active pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. The imager includes a correlated double sampling circuit and pixel address/digital control circuit; the image data is read-out as coded serial signal. The sensor system uses a light-emitting diode (LED) to excite the target analyte responsive luminophores doped within discrete xerogel-based sensor elements. As a prototype, we developed a 4 × 4 (16 elements) array of oxygen (O 2 ) sensors. Each group of 4 sensor elements in the array (arranged in a row) is designed to provide a different and specific sensitivity to the target gaseous O 2 concentration. This property of multiple sensitivities is achieved by using a strategic mix of two oxygen sensitive luminophores ([Ru(dpp) 3 ] 2+ and ([Ru(bpy) 3 ] 2+ ) in each pin-printed xerogel sensor element. The CMOS imager consumes an average power of 8 mW operating at 1 kHz sampling frequency driven at 5 V. The developed prototype system demonstrates a low cost and miniaturized luminescence multisensor system.

Thin hybrid pixel assembly with backside compensation layer on ROIC

NASA Astrophysics Data System (ADS)

Bates, R.; Buttar, C.; McMullen, T.; Cunningham, L.; Ashby, J.; Doherty, F.; Gray, C.; Pares, G.; Vignoud, L.; Kholti, B.; Vahanen, S.

2017-01-01

The entire ATLAS inner tracking system will be replaced for operation at the HL-LHC . This will include a significantly larger pixel detector of approximately 15 m2. For this project, it is critical to reduce the mass of the hybrid pixel modules and this requires thinning both the sensor and readout chips to about 150 micrometres each. The thinning of the silicon chips leads to low bump yield for SnAg bumps due to bad co-planarity of the two chips at the solder reflow stage creating dead zones within the pixel array. In the case of the ATLAS FEI4 pixel readout chip thinned to 100 micrometres, the chip is concave, with the front side in compression, with a bow of +100 micrometres at room temperature which varies to a bow of -175 micrometres at the SnAg solder reflow temperature, caused by the CTE mismatch between the materials in the CMOS stack and the silicon substrate. A new wafer level process to address the issue of low bump yield be controlling the chip bow has been developed. A back-side dielectric and metal stack of SiN and Al:Si has been deposited on the readout chip wafer to dynamically compensate the stress of the front side stack. In keeping with a 3D process the materials used are compatible with Through Silicon Via (TSV) technology with a TSV last approach which is under development for this chip. It is demonstrated that the amplitude of the correction can be manipulated by the deposition conditions and thickness of the SiN/Al:Si stack. The bow magnitude over the temperature range for the best sample to date is reduced by almost a factor of 4 and the sign of the bow (shape of the die) remains constant. Further development of the backside deposition conditions is on-going with the target of close to zero bow at the solder reflow temperature and a minimal bow magnitude throughout the temperature range. Assemblies produced from FEI4 readout wafers thinned to 100 micrometres with the backside compensation layer have been made for the first time and demonstrate bond yields close to 100%.

A novel source-drain follower for monolithic active pixel sensors

NASA Astrophysics Data System (ADS)

Gao, C.; Aglieri, G.; Hillemanns, H.; Huang, G.; Junique, A.; Keil, M.; Kim, D.; Kofarago, M.; Kugathasan, T.; Mager, M.; Marin Tobon, C. A.; Martinengo, P.; Mugnier, H.; Musa, L.; Lee, S.; Reidt, F.; Riedler, P.; Rousset, J.; Sielewicz, K. M.; Snoeys, W.; Sun, X.; Van Hoorne, J. W.; Yang, P.

2016-09-01

Monolithic active pixel sensors (MAPS) receive interest in tracking applications in high energy physics as they integrate sensor and readout electronics in one silicon die with potential for lower material budget and cost, and better performance. Source followers (SFs) are widely used for MAPS readout: they increase charge conversion gain 1/Ceff or decrease the effective sensing node capacitance Ceff because the follower action compensates part of the input capacitance. Charge conversion gain is critical for analog power consumption and therefore for material budget in tracking applications, and also has direct system impact. This paper presents a novel source-drain follower (SDF), where both source and drain follow the gate potential improving charge conversion gain. For the inner tracking system (ITS) upgrade of the ALICE experiment at CERN, low material budget is a primary requirement. The SDF circuit was studied as part of the effort to optimize the effective capacitance of the sensing node. The collection electrode, input transistor and routing metal all contribute to Ceff. Reverse sensor bias reduces the collection electrode capacitance. The novel SDF circuit eliminates the contribution of the input transistor to Ceff, reduces the routing contribution if additional shielding is introduced, provides a way to estimate the capacitance of the sensor itself, and has a voltage gain closer to unity than the standard SF. The SDF circuit has a somewhat larger area with a somewhat smaller bandwidth, but this is acceptable in most cases. A test chip, manufactured in a 180 nm CMOS image sensor process, implements small prototype pixel matrices in different flavors to compare the standard SF to the novel SF and to the novel SF with additional shielding. The effective sensing node capacitance was measured using a 55Fe source. Increasing reverse substrate bias from -1 V to -6 V reduces Ceff by 38% and the equivalent noise charge (ENC) by 22% for the standard SF. The SDF provides a further 9% improvement for Ceff and 25% for ENC. The SDF circuit with additional shielding provides 18% improvement for Ceff, and combined with -6 V reverse bias yields almost a factor 2.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.

Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long.more » A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to clock distribution etc. can be accurately analyzed to determine ROIC architectural viability and bottlenecks. Hence the impact of the detector parameters on the scientific application can be studied.« less

Stacked color image sensor using wavelength-selective organic photoconductive films with zinc-oxide thin film transistors as a signal readout circuit

NASA Astrophysics Data System (ADS)

Seo, Hokuto; Aihara, Satoshi; Namba, Masakazu; Watabe, Toshihisa; Ohtake, Hiroshi; Kubota, Misao; Egami, Norifumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Mamoru; Nitta, Hiroshi; Hirao, Takashi

2010-01-01

Our group has been developing a new type of image sensor overlaid with three organic photoconductive films, which are individually sensitive to only one of the primary color components (blue (B), green (G), or red (R) light), with the aim of developing a compact, high resolution color camera without any color separation optical systems. In this paper, we firstly revealed the unique characteristics of organic photoconductive films. Only choosing organic materials can tune the photoconductive properties of the film, especially excellent wavelength selectivities which are good enough to divide the incident light into three primary colors. Color separation with vertically stacked organic films was also shown. In addition, the high-resolution of organic photoconductive films sufficient for high-definition television (HDTV) was confirmed in a shooting experiment using a camera tube. Secondly, as a step toward our goal, we fabricated a stacked organic image sensor with G- and R-sensitive organic photoconductive films, each of which had a zinc oxide (ZnO) thin film transistor (TFT) readout circuit, and demonstrated image pickup at a TV frame rate. A color image with a resolution corresponding to the pixel number of the ZnO TFT readout circuit was obtained from the stacked image sensor. These results show the potential for the development of high-resolution prism-less color cameras with stacked organic photoconductive films.

Readout and DAQ for Pixel Detectors

NASA Astrophysics Data System (ADS)

Platkevic, Michal

2010-01-01

Data readout and acquisition control of pixel detectors demand the transfer of significantly a large amounts of bits between the detector and the computer. For this purpose dedicated interfaces are used which are designed with focus on features like speed, small dimensions or flexibility of use such as digital signal processors, field-programmable gate arrays (FPGA) and USB communication ports. This work summarizes the readout and DAQ system built for state-of-the-art pixel detectors of the Medipix family.

High speed wide field CMOS camera for Transneptunian Automatic Occultation Survey

NASA Astrophysics Data System (ADS)

Wang, Shiang-Yu; Geary, John C.; Amato, Stephen M.; Hu, Yen-Sang; Ling, Hung-Hsu; Huang, Pin-Jie; Furesz, Gabor; Chen, Hsin-Yo; Chang, Yin-Chang; Szentgyorgyi, Andrew; Lehner, Matthew; Norton, Timothy

2014-08-01

The Transneptunian Automated Occultation Survey (TAOS II) is a three robotic telescope project to detect the stellar occultation events generated by Trans Neptunian Objects (TNOs). TAOS II project aims to monitor about 10000 stars simultaneously at 20Hz to enable statistically significant event rate. The TAOS II camera is designed to cover the 1.7 degree diameter field of view (FoV) of the 1.3m telescope with 10 mosaic 4.5kx2k CMOS sensors. The new CMOS sensor has a back illumination thinned structure and high sensitivity to provide similar performance to that of the backillumination thinned CCDs. The sensor provides two parallel and eight serial decoders so the region of interests can be addressed and read out separately through different output channels efficiently. The pixel scale is about 0.6"/pix with the 16μm pixels. The sensors, mounted on a single Invar plate, are cooled to the operation temperature of about 200K by a cryogenic cooler. The Invar plate is connected to the dewar body through a supporting ring with three G10 bipods. The deformation of the cold plate is less than 10μm to ensure the sensor surface is always within ±40μm of focus range. The control electronics consists of analog part and a Xilinx FPGA based digital circuit. For each field star, 8×8 pixels box will be readout. The pixel rate for each channel is about 1Mpix/s and the total pixel rate for each camera is about 80Mpix/s. The FPGA module will calculate the total flux and also the centroid coordinates for every field star in each exposure.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shanks, Katherine S.; Philipp, Hugh T.; Weiss, Joel T.

Experiments at storage ring light sources as well as at next-generation light sources increasingly require detectors capable of high dynamic range operation, combining low-noise detection of single photons with large pixel well depth. XFEL sources in particular provide pulse intensities sufficiently high that a purely photon-counting approach is impractical. The High Dynamic Range Pixel Array Detector (HDR-PAD) project aims to provide a dynamic range extending from single-photon sensitivity to 10{sup 6} photons/pixel in a single XFEL pulse while maintaining the ability to tolerate a sustained flux of 10{sup 11} ph/s/pixel at a storage ring source. Achieving these goals involves themore » development of fast pixel front-end electronics as well as, in the XFEL case, leveraging the delayed charge collection due to plasma effects in the sensor. A first prototype of essential electronic components of the HDR-PAD readout ASIC, exploring different options for the pixel front-end, has been fabricated. Here, the HDR-PAD concept and preliminary design will be described.« less

Active pixel sensor array with multiresolution readout

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Kemeny, Sabrina E. (Inventor); Pain, Bedabrata (Inventor)

1999-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate, and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit to provide images of varying resolution. The multiresolution circuit could also be employed in an array where the photosensitive portion of each pixel cell is a photodiode. This latter embodiment could further be modified to facilitate low light imaging.

Phonon-mediated superconducting transition-edge sensor X-ray detectors for use in astronomy

NASA Astrophysics Data System (ADS)

Leman, Steven W.; Martinez-Galarce, Dennis S.; Brink, Paul L.; Cabrera, Blas; Castle, Joseph P.; Morse, Kathleen; Stern, Robert A.; Tomada, Astrid

2004-09-01

Superconducting Transition-Edge Sensors (TESs) are generating a great deal of interest in the areas of x-ray astrophysics and space science, particularly to develop them as large-array, imaging x-ray spectrometers. We are developing a novel concept that is based on position-sensitive macro-pixels placing TESs on the backside of a silicon or germanium absorber. Each x-ray absorbed will be position (X/δX and Y/δY ~ 100) and energy (E/δE ~ 1000) resolved via four distributed TES readouts. In the future, combining such macropixels with advances in multiplexing could lead to 30 by 30 arrays of close-packed macro-pixels equivalent to imaging instruments of 10 megapixels or more. We report on our progress to date and discuss its application to a plausible solar satellite mission and plans for future development.

Developments of Highly Multiplexed, Multi-chroic Pixels for Balloon-Borne Platforms

NASA Astrophysics Data System (ADS)

Aubin, F.; Hanany, S.; Johnson, B. R.; Lee, A.; Suzuki, A.; Westbrook, B.; Young, K.

2018-02-01

We present our work to develop and characterize low thermal conductance bolometers that are part of sinuous antenna multi-chroic pixels (SAMP). We use longer, thinner and meandered bolometer legs to achieve 9 pW/K thermal conductance bolometers. We also discuss the development of inductor-capacitor chips operated at 4 K to extend the multiplexing factor of the frequency domain multiplexing to 105, an increase of 60% compared to the factor currently demonstrated for this readout system. This technology development is motivated by EBEX-IDS, a balloon-borne polarimeter designed to characterize the polarization of foregrounds and to detect the primordial gravity waves through their B-mode signature on the polarization of the cosmic microwave background. EBEX-IDS will operate 20,562 transition edge sensor bolometers spread over 7 frequency bands between 150 and 360 GHz. Balloon and satellite platforms enable observations at frequencies inaccessible from the ground and with higher instantaneous sensitivity. This development improves the readiness of the SAMP and frequency domain readout technologies for future satellite applications.

Comparison of two optimized readout chains for low light CIS

NASA Astrophysics Data System (ADS)

Boukhayma, A.; Peizerat, A.; Dupret, A.; Enz, C.

2014-03-01

We compare the noise performance of two optimized readout chains that are based on 4T pixels and featuring the same bandwidth of 265kHz (enough to read 1Megapixel with 50frame/s). Both chains contain a 4T pixel, a column amplifier and a single slope analog-to-digital converter operating a CDS. In one case, the pixel operates in source follower configuration, and in common source configuration in the other case. Based on analytical noise calculation of both readout chains, an optimization methodology is presented. Analytical results are confirmed by transient simulations using 130nm process. A total input referred noise bellow 0.4 electrons RMS is reached for a simulated conversion gain of 160μV/e-. Both optimized readout chains show the same input referred 1/f noise. The common source based readout chain shows better performance for thermal noise and requires smaller silicon area. We discuss the possible drawbacks of the common source configuration and provide the reader with a comparative table between the two readout chains. The table contains several variants (column amplifier gain, in-pixel transistor sizes and type).

Development of 4-Sides Buttable CdTe-ASIC Hybrid Module for X-ray Flat Panel Detector

NASA Astrophysics Data System (ADS)

Tamaki, Mitsuru; Mito, Yoshio; Shuto, Yasuhiro; Kiyuna, Tatsuya; Yamamoto, Masaya; Sagae, Kenichi; Kina, Tooru; Koizumi, Tatsuhiro; Ohno, Ryoichi

2009-08-01

A 4-sides buttable CdTe-ASIC hybrid module suitable for use in an X-ray flat panel detector (FPD) has been developed by applying through silicon via (TSV) technology to the readout ASIC. The ASIC has 128 times 256 channels of charge integration type readout circuitry and an area of 12.9 mm times 25.7 mm. The CdTe sensor of 1 mm thickness, having the same area and pixel of 100 mum pitch, was fabricated from the Cl-doped CdTe single crystal grown by traveling heater method (THM). Then the CdTe pixel sensor was hybridized with the ASIC using the bump-bonding technology. The basic performance of this 4-sides buttable module was evaluated by taking X-ray images, and it was compared with that of a commercially available indirect type CsI(Tl) FPD. A prototype CdTe FPD was made by assembling 9 pieces of the 4-sides buttable modules into 3 times 3 arrays in which the neighboring modules were mounted on the interface board. The FPD covers an active area of 77 mm times 39 mm. The results showed the great potential of this 4-sides buttable module for the new real time X-ray FPD with high spatial resolution.

MT3825BA: a 384×288-25µm ROIC for uncooled microbolometer FPAs

NASA Astrophysics Data System (ADS)

Eminoglu, Selim; Gulden, M. Ali; Bayhan, Nusret; Incedere, O. Samet; Soyer, S. Tuncer; Ustundag, Cem M. B.; Isikhan, Murat; Kocak, Serhat; Turan, Ozge; Yalcin, Cem; Akin, Tayfun

2014-06-01

This paper reports the development of a new microbolometer Readout Integrated Circuit (ROIC) called MT3825BA. It has a format of 384 × 288 and a pixel pitch of 25μm. MT3825BA is Mikro-Tasarim's second microbolometer ROIC product, which is developed specifically for resistive surface micro-machined microbolometer detector arrays using high-TCR pixel materials, such as VOx and a-Si. MT3825BA has a system-on-chip architecture, where all the timing, biasing, and pixel non-uniformity correction (NUC) operations in the ROIC are applied using on-chip circuitry simplifying the use and system integration of this ROIC. The ROIC is designed to support pixel resistance values ranging from 30 KΩ to 100 KΩ. MT3825BA is operated using conventional row based readout method, where pixels in the array are read out in a row-by-row basis, where the applied bias for each pixel in a given row is updated at the beginning of each line period according to the applied line based NUC data. The NUC data is applied continuously in a row-by-row basis using the serial programming interface, which is also used to program user configurable features of the ROIC, such as readout gain, integration time, and number of analog video outputs. MT3825BA has a total of 4 analog video outputs and 2 analog reference outputs, placed at the top and bottom of the ROIC, which can be programmed to operate in the 1, 2, and 4-output modes, supporting frames rates well above 60 fps at a 3 MHz pixel output rate. The pixels in the array are read out with respect to reference pixels implemented above and below actual array pixels. The bias voltage of the pixels can be programmed over a 1.0 V range to compensate for the changes in the detector resistance values due to the variations coming from the manufacturing process or changes in the operating temperature. The ROIC has an on-chip integrated temperature sensor with a sensitivity of better than 5 mV / K, and the output of the temperature sensor can be read out the output as part of the analog video stream. MT3825BA can be used to build a microbolometer FPAs with an NETD value below 100 mK using a microbolometer detector array fabrication technology with a detector resistance value up to 100 KΩ, a high TCR value (< 2 % / K), and a sufficiently low pixel thermal conductance (Gth ≤ 20 nW / K). MT3825BA measures 13.0 mm × 13.5 mm and is fabricated on 200 mm CMOS wafers. The microbolometer ROIC wafers are engineered to have flat surface finish to simplify the wafer level detector fabrication and wafer level vacuum packaging (WLVP). The ROIC runs on 3.3 V analog and 1.8 V digital supplies, and dissipates less than 85 mW in the 2-output mode at 30 fps. Mikro-Tasarim provides tested ROIC wafers and offers compact test electronics and software for its ROIC customers to shorten their FPA and camera development cycles.

Magnetically-coupled microcalorimeter arrays for x-ray astrophysics

NASA Astrophysics Data System (ADS)

Bandler, Simon

The "X-ray Surveyor" has been listed by NASA as one of the four major large mission concepts to be studied in the next Astrophysics Decadal Review in its preliminary list of large concepts. One of the key instruments on such a mission would be a very large format X-ray microcalorimeter array, with an array size of greater than 100 thousand pixels. Magnetically-coupled microcalorimeters (MCC) are one of the technologies with the greatest potential to meet the requirements of this mission, and this proposal is one to carry out research specifically to reach the goals of this vision. The "X-ray Surveyor" is a concept for a future mission that will make X-ray observations that are instrumental to understanding the quickly emerging population of galaxies and supermassive black holes at z ~10. The observations will trace the formation of galaxies and their assembly into large-scale structures starting from the earliest possible epochs. This mission would be observing baryons and large-scale physical processes outside of the very densest regions in the local Universe. This can be achieved with an X-ray observatory with similar angular resolution as Chandra but with significantly improved optic area and detector sensitivity. Chandra-scale angular resolution (1" or better) is essential in building more powerful, higher throughput observatories to avoid source confusion and remain photon-limited rather than background-limited. A prime consideration for the microcalorimeter camera on this type of mission is maintaining ~ 1 arcsec spatial resolution over the largest possible field of view, even if this means a slight trade-off against the spectral resolution. A uniform array of 1" pixels covering at least 5'x5' field of view is desired. To reduce the number of sensors read out, in geometries where extremely fine pitch (~50 microns) is desired, the most promising technologies are those in which a thermal sensor such an MCC can read out a sub-array of 20-25 individual 1'• pixels. Projections based on the current state of this technology indicate that less than 5 eV energy resolution can be achieved with this sort of geometry. Theoretically, magnetically-coupled microcalorimeters are well-equipped to achieve the very highest energy resolutions, especially when several absorbers are attached to each sensor, increasing the heat capacity. This program will build upon the work carried out by our group on metallic magnetic calorimeters (MMC) and Magnetic penetration thermometers (MPT) in the antecedent program. In this program we will carry out development in three main areas. First, we will develop sensor geometries that are optimized for reading out sub-arrays of pixels with a single sensor of the type that is likely desired by the "X-ray Surveyor". Second, we will further develop large-format arraying prototypes with the engineering of wiring-pixel approaches that are scalable to the large-format arrays that are needed. Third, we will develop the read-out technology that will be necessary, which utilizes the next generation of X-ray microcalorimeter read-out approach, a microwave multiplexing readout.

Development of a novel direct X-ray detector using photoinduced discharge (PID) readout for digital radiography

NASA Astrophysics Data System (ADS)

Heo, D.; Jeon, S.; Kim, J.-S.; Kim, R. K.; Cha, B. K.; Moon, B. J.; Yoon, J.

2013-02-01

We developed a novel direct X-ray detector using photoinduced discharge (PID) readout for digital radiography. The pixel resolution is 512 × 512 with 200 μm pixel and the overall active dimensions of the X-ray imaging panel is 10.24 cm × 10.24 cm. The detector consists of an X-ray absorption layer of amorphous selenium, a charge accumulation layer of metal, and a PID readout layer of amorphous silicon. In particular, the charge accumulation is pixelated because image charges generated by X-ray should be stored pixel by pixel. Here the image charges, or holes, are recombined with electrons generated by the PID method. We used a 405 nm laser diode and cylindrical lens to make a line beam source with a width of 50 μm for PID readout, which generates charges for each pixel lines during the scan. We obtained spatial frequencies of about 1.0 lp/mm for the X-direction (lateral direction) and 0.9 lp/mm for the Y-direction (scanning direction) at 50% modulation transfer function.

Results from the NA62 Gigatracker Prototype: A Low-Mass and sub-ns Time Resolution Silicon Pixel Detector

NASA Astrophysics Data System (ADS)

Fiorini, M.; Rinella, G. Aglieri; Carassiti, V.; Ceccucci, A.; Gil, E. Cortina; Ramusino, A. Cotta; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Marchetto, F.; Mapelli, A.; Martin, E.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Petagna, P.; Petrucci, F.; Perktold, L.; Riedler, P.; Rivetti, A.; Statera, M.; Velghe, B.

The Gigatracker (GTK) is a hybrid silicon pixel detector developed for NA62, the experiment aimed at studying ultra-rare kaon decays at the CERN SPS. Three GTK stations will provide precise momentum and angular measurements on every track of the high intensity NA62 hadron beam with a time-tagging resolution of 150 ps. Multiple scattering and hadronic interactions of beam particles in the GTK have to be minimized to keep background events at acceptable levels, hence the total material budget is fixed to 0.5% X0 per station. In addition the calculated fluence for 100 days of running is 2×1014 1 MeV neq/cm2, comparable to the one expected for the inner trackers of LHC detectors in 10 years of operation. These requirements pose challenges for the development of an efficient and low-mass cooling system, to be operated in vacuum, and on the thinning of read-out chips to 100 μm or less. The most challenging requirement is represented by the time resolution, which can be achieved by carefully compensating for the discriminator time-walk. For this purpose, two complementary read-out architectures have been designed and produced as small-scale prototypes: the first is based on the use of a Time-over-Threshold circuit followed by a TDC shared by a group of pixels, while the other uses a constant-fraction discriminator followed by an on-pixel TDC. The readout pixel ASICs are produced in 130 nm IBM CMOS technology and bump-bonded to 200 μm thick silicon sensors. The Gigatracker detector system is described with particular emphasis on recent experimental results obtained from laboratory and beam tests of prototype bump-bonded assemblies, which show a time resolution of less than 200 ps for single hits.

Noise Reduction Techniques and Scaling Effects towards Photon Counting CMOS Image Sensors

PubMed Central

Boukhayma, Assim; Peizerat, Arnaud; Enz, Christian

2016-01-01

This paper presents an overview of the read noise in CMOS image sensors (CISs) based on four-transistors (4T) pixels, column-level amplification and correlated multiple sampling. Starting from the input-referred noise analytical formula, process level optimizations, device choices and circuit techniques at the pixel and column level of the readout chain are derived and discussed. The noise reduction techniques that can be implemented at the column and pixel level are verified by transient noise simulations, measurement and results from recently-published low noise CIS. We show how recently-reported process refinement, leading to the reduction of the sense node capacitance, can be combined with an optimal in-pixel source follower design to reach a sub-0.3erms- read noise at room temperature. This paper also discusses the impact of technology scaling on the CIS read noise. It shows how designers can take advantage of scaling and how the Metal-Oxide-Semiconductor (MOS) transistor gate leakage tunneling current appears as a challenging limitation. For this purpose, both simulation results of the gate leakage current and 1/f noise data reported from different foundries and technology nodes are used.

Advances in detector technologies for visible and infrared wavefront sensing

NASA Astrophysics Data System (ADS)

Feautrier, Philippe; Gach, Jean-Luc; Downing, Mark; Jorden, Paul; Kolb, Johann; Rothman, Johan; Fusco, Thierry; Balard, Philippe; Stadler, Eric; Guillaume, Christian; Boutolleau, David; Destefanis, Gérard; Lhermet, Nicolas; Pacaud, Olivier; Vuillermet, Michel; Kerlain, Alexandre; Hubin, Norbert; Reyes, Javier; Kasper, Markus; Ivert, Olaf; Suske, Wolfgang; Walker, Andrew; Skegg, Michael; Derelle, Sophie; Deschamps, Joel; Robert, Clélia; Vedrenne, Nicolas; Chazalet, Frédéric; Tanchon, Julien; Trollier, Thierry; Ravex, Alain; Zins, Gérard; Kern, Pierre; Moulin, Thibaut; Preis, Olivier

2012-07-01

The purpose of this paper is to give an overview of the state of the art wavefront sensor detectors developments held in Europe for the last decade. The success of the next generation of instruments for 8 to 40-m class telescopes will depend on the ability of Adaptive Optics (AO) systems to provide excellent image quality and stability. This will be achieved by increasing the sampling, wavelength range and correction quality of the wave front error in both spatial and time domains. The modern generation of AO wavefront sensor detectors development started in the late nineties with the CCD50 detector fabricated by e2v technologies under ESO contract for the ESO NACO AO system. With a 128x128 pixels format, this 8 outputs CCD offered a 500 Hz frame rate with a readout noise of 7e-. A major breakthrough has been achieved with the recent development by e2v technologies of the CCD220. This 240x240 pixels 8 outputs EMCCD (CCD with internal multiplication) has been jointly funded by ESO and Europe under the FP6 programme. The CCD220 and the OCAM2 camera that operates the detector are now the most sensitive system in the world for advanced adaptive optics systems, offering less than 0.2 e readout noise at a frame rate of 1500 Hz with negligible dark current. Extremely easy to operate, OCAM2 only needs a 24 V power supply and a modest water cooling circuit. This system, commercialized by First Light Imaging, is extensively described in this paper. An upgrade of OCAM2 is foreseen to boost its frame rate to 2 kHz, opening the window of XAO wavefront sensing for the ELT using 4 synchronized cameras and pyramid wavefront sensing. Since this major success, new developments started in Europe. One is fully dedicated to Natural and Laser Guide Star AO for the E-ELT with ESO involvement. The spot elongation from a LGS Shack Hartman wavefront sensor necessitates an increase of the pixel format. Two detectors are currently developed by e2v. The NGSD will be a 880x840 pixels CMOS detector with a readout noise of 3 e (goal 1e) at 700 Hz frame rate. The LGSD is a scaling of the NGSD with 1760x1680 pixels and 3 e readout noise (goal 1e) at 700 Hz (goal 1000 Hz) frame rate. New technologies will be developed for that purpose: advanced CMOS pixel architecture, CMOS back thinned and back illuminated device for very high QE, full digital outputs with signal digital conversion on chip. In addition, the CMOS technology is extremely robust in a telescope environment. Both detectors will be used on the European ELT but also interest potentially all giant telescopes under development. Additional developments also started for wavefront sensing in the infrared based on a new technological breakthrough using ultra low noise Avalanche Photodiode (APD) arrays within the RAPID project. Developed by the SOFRADIR and CEA/LETI manufacturers, the latter will offer a 320x240 8 outputs 30 microns IR array, sensitive from 0.4 to 3.2 microns, with 2 e readout noise at 1500 Hz frame rate. The high QE response is almost flat over this wavelength range. Advanced packaging with miniature cryostat using liquid nitrogen free pulse tube cryocoolers is currently developed for this programme in order to allow use on this detector in any type of environment. First results of this project are detailed here. These programs are held with several partners, among them are the French astronomical laboratories (LAM, OHP, IPAG), the detector manufacturers (e2v technologies, Sofradir, CEA/LETI) and other partners (ESO, ONERA, IAC, GTC). Funding is: Opticon FP6 and FP7 from European Commission, ESO, CNRS and Université de Provence, Sofradir, ONERA, CEA/LETI and the French FUI (DGCIS).

High dynamic range CMOS (HDRC) imagers for safety systems

NASA Astrophysics Data System (ADS)

Strobel, Markus; Döttling, Dietmar

2013-04-01

The first part of this paper describes the high dynamic range CMOS (HDRC®) imager - a special type of CMOS image sensor with logarithmic response. The powerful property of a high dynamic range (HDR) image acquisition is detailed by mathematical definition and measurement of the optoelectronic conversion function (OECF) of two different HDRC imagers. Specific sensor parameters will be discussed including the pixel design for the global shutter readout. The second part will give an outline on the applications and requirements of cameras for industrial safety. Equipped with HDRC global shutter sensors SafetyEYE® is a high-performance stereo camera system for safe three-dimensional zone monitoring enabling new and more flexible solutions compared to existing safety guards.

PFM2: a 32 × 32 processor for X-ray diffraction imaging at FELs

NASA Astrophysics Data System (ADS)

Manghisoni, M.; Fabris, L.; Re, V.; Traversi, G.; Ratti, L.; Grassi, M.; Lodola, L.; Malcovati, P.; Vacchi, C.; Pancheri, L.; Benkechcache, M. E. A.; Dalla Betta, G.-F.; Xu, H.; Verzellesi, G.; Ronchin, S.; Boscardin, M.; Batignani, G.; Bettarini, S.; Casarosa, G.; Forti, F.; Giorgi, M.; Paladino, A.; Paoloni, E.; Rizzo, G.; Morsani, F.

2016-11-01

This work is concerned with the design of a readout chip for application to experiments at the next generation X-ray Free Electron Lasers (FEL). The ASIC, named PixFEL Matrix (PFM2), has been designed in a 65 nm CMOS technology and consists of 32 × 32 pixels. Each cell covers an area of 110 × 110 μm2 and includes a low-noise charge sensitive amplifier (CSA) with dynamic signal compression, a time-variant shaper used to process the preamplifier output signal, a 10-bit successive approximation register (SAR) analog-to-digital converter (ADC) and digital circuitry for channel control and data readout. Two different solutions for the readout channel, based on different versions of the time-variant filter, have been integrated in the chip. Both solutions can be operated in such a way to cope with the high frame rate (exceeding 1 MHz) foreseen for future X-ray FEL machines. The ASIC will be bump bonded to a slim/active edge pixel sensor to form the first demonstrator for the PixFEL X-ray imager. This work has been carried out in the frame of the PixFEL project funded by Istituto Nazionale di Fisica Nucleare (INFN), Italy.

Self-adjusting threshold mechanism for pixel detectors

NASA Astrophysics Data System (ADS)

Heim, Timon; Garcia-Sciveres, Maurice

2017-09-01

Readout chips of hybrid pixel detectors use a low power amplifier and threshold discrimination to process charge deposited in semiconductor sensors. Due to transistor mismatch each pixel circuit needs to be calibrated individually to achieve response uniformity. Traditionally this is addressed by programmable threshold trimming in each pixel, but requires robustness against radiation effects, temperature, and time. In this paper a self-adjusting threshold mechanism is presented, which corrects the threshold for both spatial inequality and time variation and maintains a constant response. It exploits the electrical noise as relative measure for the threshold and automatically adjust the threshold of each pixel to always achieve a uniform frequency of noise hits. A digital implementation of the method in the form of an up/down counter and combinatorial logic filter is presented. The behavior of this circuit has been simulated to evaluate its performance and compare it to traditional calibration results. The simulation results show that this mechanism can perform equally well, but eliminates instability over time and is immune to single event upsets.

A fast embedded readout system for large-area Medipix and Timepix systems

NASA Astrophysics Data System (ADS)

Brogna, A. S.; Balzer, M.; Smale, S.; Hartmann, J.; Bormann, D.; Hamann, E.; Cecilia, A.; Zuber, M.; Koenig, T.; Zwerger, A.; Weber, M.; Fiederle, M.; Baumbach, T.

2014-05-01

In this work we present a novel readout electronics for an X-ray sensor based on a Si crystal bump-bonded to an array of 3 × 2 Medipix ASICs. The pixel size is 55 μm × 55 μm with a total number of ~ 400k pixels and a sensitive area of 42 mm × 28 mm. The readout electronics operate Medipix-2 MXR or Timepix ASICs with a clock speed of 125 MHz. The data acquisition system is centered around an FPGA and each of the six ASICs has a dedicated I/O port for simultaneous data acquisition. The settings of the auxiliary devices (ADCs and DACs) are also processed in the FPGA. Moreover, a high-resolution timer operates the electronic shutter to select the exposure time from 8 ns to several milliseconds. A sophisticated trigger is available in hardware and software to synchronize the acquisition with external electro-mechanical motors. The system includes a diagnostic subsystem to check the sensor temperature and to control the cooling Peltier cells and a programmable high-voltage generator to bias the crystal. A network cable transfers the data, encapsulated into the UDP protocol and streamed at 1 Gb/s. Therefore most notebooks or personal computers are able to process the data and to program the system without a dedicated interface. The data readout software is compatible with the well-known Pixelman 2.x running both on Windows and GNU/Linux. Furthermore the open architecture encourages users to write their own applications. With a low-level interface library which implements all the basic features, a MATLAB or Python script can be implemented for special manipulations of the raw data. In this paper we present selected images taken with a microfocus X-ray tube to demonstrate the capability to collect the data at rates up to 120 fps corresponding to 0.76 Gb/s.

CMOS imager for pointing and tracking applications

NASA Technical Reports Server (NTRS)

Sun, Chao (Inventor); Pain, Bedabrata (Inventor); Yang, Guang (Inventor); Heynssens, Julie B. (Inventor)

2006-01-01

Systems and techniques to realize pointing and tracking applications with CMOS imaging devices. In general, in one implementation, the technique includes: sampling multiple rows and multiple columns of an active pixel sensor array into a memory array (e.g., an on-chip memory array), and reading out the multiple rows and multiple columns sampled in the memory array to provide image data with reduced motion artifact. Various operation modes may be provided, including TDS, CDS, CQS, a tracking mode to read out multiple windows, and/or a mode employing a sample-first-read-later readout scheme. The tracking mode can take advantage of a diagonal switch array. The diagonal switch array, the active pixel sensor array and the memory array can be integrated onto a single imager chip with a controller. This imager device can be part of a larger imaging system for both space-based applications and terrestrial applications.

Downsampling Photodetector Array with Windowing

NASA Technical Reports Server (NTRS)

Patawaran, Ferze D.; Farr, William H.; Nguyen, Danh H.; Quirk, Kevin J.; Sahasrabudhe, Adit

2012-01-01

In a photon counting detector array, each pixel in the array produces an electrical pulse when an incident photon on that pixel is detected. Detection and demodulation of an optical communication signal that modulated the intensity of the optical signal requires counting the number of photon arrivals over a given interval. As the size of photon counting photodetector arrays increases, parallel processing of all the pixels exceeds the resources available in current application-specific integrated circuit (ASIC) and gate array (GA) technology; the desire for a high fill factor in avalanche photodiode (APD) detector arrays also precludes this. Through the use of downsampling and windowing portions of the detector array, the processing is distributed between the ASIC and GA. This allows demodulation of the optical communication signal incident on a large photon counting detector array, as well as providing architecture amenable to algorithmic changes. The detector array readout ASIC functions as a parallel-to-serial converter, serializing the photodetector array output for subsequent processing. Additional downsampling functionality for each pixel is added to this ASIC. Due to the large number of pixels in the array, the readout time of the entire photodetector is greater than the time between photon arrivals; therefore, a downsampling pre-processing step is done in order to increase the time allowed for the readout to occur. Each pixel drives a small counter that is incremented at every detected photon arrival or, equivalently, the charge in a storage capacitor is incremented. At the end of a user-configurable counting period (calculated independently from the ASIC), the counters are sampled and cleared. This downsampled photon count information is then sent one counter word at a time to the GA. For a large array, processing even the downsampled pixel counts exceeds the capabilities of the GA. Windowing of the array, whereby several subsets of pixels are designated for processing, is used to further reduce the computational requirements. The grouping of the designated pixel frame as the photon count information is sent one word at a time to the GA, the aggregation of the pixels in a window can be achieved by selecting only the designated pixel counts from the serial stream of photon counts, thereby obviating the need to store the entire frame of pixel count in the gate array. The pixel count se quence from each window can then be processed, forming lower-rate pixel statistics for each window. By having this processing occur in the GA rather than in the ASIC, future changes to the processing algorithm can be readily implemented. The high-bandwidth requirements of a photon counting array combined with the properties of the optical modulation being detected by the array present a unique problem that has not been addressed by current CCD or CMOS sensor array solutions.

Development of CMOS pixel sensors for the upgrade of the ALICE Inner Tracking System

NASA Astrophysics Data System (ADS)

Molnar, L.

2014-12-01

The ALICE Collaboration is preparing a major upgrade of the current detector, planned for installation during the second long LHC shutdown in the years 2018-19, in order to enhance its low-momentum vertexing and tracking capability, and exploit the planned increase of the LHC luminosity with Pb beams. One of the cornerstones of the ALICE upgrade strategy is to replace the current Inner Tracking System in its entirety with a new, high resolution, low-material ITS detector. The new ITS will consist of seven concentric layers equipped with Monolithic Active Pixel Sensors (MAPS) implemented using the 0.18 μm CMOS technology of TowerJazz. In this contribution, the main key features of the ITS upgrade will be illustrated with emphasis on the functionality of the pixel chip. The ongoing developments on the readout architectures, which have been implemented in several fabricated prototypes, will be discussed. The operational features of these prototypes as well as the results of the characterisation tests before and after irradiation will also be presented.

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Zheng, Xinyu (Inventor)

2002-01-01

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

NASA Technical Reports Server (NTRS)

Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

2005-01-01

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Extended focal-plane array development for the International X-ray Observatory

NASA Astrophysics Data System (ADS)

Smith, Stephen J.; Bandler, Simon R.; Beyer, Joern; Chervenak, James A.; Drung, Dietmar; Eckart, Megan E.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.; Scott Porter, F.; Sadleir, John E.

2009-12-01

We are developing arrays of transition-edge sensors (TES's) for the International X-ray observatory (IXO). The IXO microcalorimeter array will consist of a central 40×40 core of 300 μm pitch pixels with a resolution of 2.5 eV from 0.3-10 keV. To maximize the science return from the mission, an outer extended array is also required. This 52×52 array (2304 elements surrounding the core) of 600 μm pitch pixels increases the field-of-view from 2' to 5.4' with a resolution of 10 eV. However, significantly increasing the number of readout channels is unfavorable due to the increase in mass and power of the readout chain as well as adding complexity at the focal plane. Consequently, we are developing position-sensitive devices which maintain the same plate scale but at a reduced number of readout channels. One option is to use multiple absorber elements with different thermal conductances to a single TES. Position discrimination is achieved from differences in the pulse rise-time. Another new option is to inductively couple several TES's to a single SQUID. Position discrimination can be achieved by using different combinations of coupling polarity, inductive couplings and heat sink conductances. We present first results demonstrating <9 eV across four 500 μm pixels coupled to a single SQUID. A further possibility is to increase the number of channels to be time-division multiplexed in a single column at some expense in resolution. In this paper we discuss experimental results and trade-offs for these extended array options.

iPadPix—A novel educational tool to visualise radioactivity measured by a hybrid pixel detector

NASA Astrophysics Data System (ADS)

Keller, O.; Schmeling, S.; Müller, A.; Benoit, M.

2016-11-01

With the ability to attribute signatures of ionising radiation to certain particle types, pixel detectors offer a unique advantage over the traditional use of Geiger-Müller tubes also in educational settings. We demonstrate in this work how a Timepix readout chip combined with a standard 300μm pixelated silicon sensor can be used to visualise radioactivity in real-time and by means of augmented reality. The chip family is the result of technology transfer from High Energy Physics at CERN and facilitated by the Medipix Collaboration. This article summarises the development of a prototype based on an iPad mini and open source software detailed in ref. [1]. Appropriate experimental activities that explore natural radioactivity and everyday objects are given to demonstrate the use of this new tool in educational settings.

A MAPS Based Micro-Vertex Detector for the STAR Experiment

DOE PAGES

Schambach, Joachim; Anderssen, Eric; Contin, Giacomo; ...

2015-06-18

For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector’s vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensormore » (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m 2. Each sensor of this PiXeL (“PXL”) sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ~3.8 cm 2. This sensor architecture features 185.6 μs readout time and 170 mW/cm 2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schambach, Joachim; Anderssen, Eric; Contin, Giacomo

For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector’s vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensormore » (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m 2. Each sensor of this PiXeL (“PXL”) sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ~3.8 cm 2. This sensor architecture features 185.6 μs readout time and 170 mW/cm 2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.« less

The Quanta Image Sensor: Every Photon Counts

PubMed Central

Fossum, Eric R.; Ma, Jiaju; Masoodian, Saleh; Anzagira, Leo; Zizza, Rachel

2016-01-01

The Quanta Image Sensor (QIS) was conceived when contemplating shrinking pixel sizes and storage capacities, and the steady increase in digital processing power. In the single-bit QIS, the output of each field is a binary bit plane, where each bit represents the presence or absence of at least one photoelectron in a photodetector. A series of bit planes is generated through high-speed readout, and a kernel or “cubicle” of bits (x, y, t) is used to create a single output image pixel. The size of the cubicle can be adjusted post-acquisition to optimize image quality. The specialized sub-diffraction-limit photodetectors in the QIS are referred to as “jots” and a QIS may have a gigajot or more, read out at 1000 fps, for a data rate exceeding 1 Tb/s. Basically, we are trying to count photons as they arrive at the sensor. This paper reviews the QIS concept and its imaging characteristics. Recent progress towards realizing the QIS for commercial and scientific purposes is discussed. This includes implementation of a pump-gate jot device in a 65 nm CIS BSI process yielding read noise as low as 0.22 e− r.m.s. and conversion gain as high as 420 µV/e−, power efficient readout electronics, currently as low as 0.4 pJ/b in the same process, creating high dynamic range images from jot data, and understanding the imaging characteristics of single-bit and multi-bit QIS devices. The QIS represents a possible major paradigm shift in image capture. PMID:27517926

Single-photon imaging in complementary metal oxide semiconductor processes

PubMed Central

Charbon, E.

2014-01-01

This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image sensors, are outlined, such as fluorescence-based microscopy, three-dimensional time-of-flight imaging and biomedical imaging, to name just a few. The paper focuses on architectures that are best suited to those applications and the trade-offs they generate. In this context, architectures are described that efficiently collect the output of single pixels when designed in large arrays. Off-chip readout circuit requirements are described for a variety of applications in physics, medicine and the life sciences. Owing to the dynamic nature of SPADs, designs featuring a large number of SPADs require careful analysis of the target application for an optimal use of silicon real estate and of limited readout bandwidth. The paper also describes the main trade-offs involved in architecting such chips and the solutions adopted with focus on scalability and miniaturization. PMID:24567470

e2v CMOS and CCD sensors and systems for astronomy

NASA Astrophysics Data System (ADS)

Jorden, P. R.; Jerram, P. A.; Fryer, M.; Stefanov, K. D.

2017-07-01

e2v designs and manufactures a wide range of sensors for space and astronomy applications. This includes high performance CCDs for X-ray, visible and near-IR wavelengths. In this paper we illustrate the maturity of CMOS capability for these applications; examples are presented together with performance data. The majority of e2v sensors for these applications are back-thinned for highest spectral response and designed for very low read-out noise; the combination delivers high signal to noise ratio in association with a variety of formats and package designs. The growing e2v capability in delivery of sub-systems and cryogenic cameras is illustrated—including the 1.2 Giga-pixel J-PAS camera system.

Which Photodiode to Use: A Comparison of CMOS-Compatible Structures

PubMed Central

Murari, Kartikeya; Etienne-Cummings, Ralph; Thakor, Nitish; Cauwenberghs, Gert

2010-01-01

While great advances have been made in optimizing fabrication process technologies for solid state image sensors, the need remains to be able to fabricate high quality photosensors in standard CMOS processes. The quality metrics depend on both the pixel architecture and the photosensitive structure. This paper presents a comparison of three photodiode structures in terms of spectral sensitivity, noise and dark current. The three structures are n+/p-sub, n-well/p-sub and p+/n-well/p-sub. All structures were fabricated in a 0.5 μm 3-metal, 2-poly, n-well process and shared the same pixel and readout architectures. Two pixel structures were fabricated—the standard three transistor active pixel sensor, where the output depends on the photodiode capacitance, and one incorporating an in-pixel capacitive transimpedance amplifier where the output is dependent only on a designed feedback capacitor. The n-well/p-sub diode performed best in terms of sensitivity (an improvement of 3.5 × and 1.6 × over the n+/p-sub and p+/n-well/p-sub diodes, respectively) and signal-to-noise ratio (1.5 × and 1.2 × improvement over the n+/p-sub and p+/n-well/p-sub diodes, respectively) while the p+/n-well/p-sub diode had the minimum (33% compared to other two structures) dark current for a given sensitivity. PMID:20454596

Which Photodiode to Use: A Comparison of CMOS-Compatible Structures.

PubMed

Murari, Kartikeya; Etienne-Cummings, Ralph; Thakor, Nitish; Cauwenberghs, Gert

2009-07-01

While great advances have been made in optimizing fabrication process technologies for solid state image sensors, the need remains to be able to fabricate high quality photosensors in standard CMOS processes. The quality metrics depend on both the pixel architecture and the photosensitive structure. This paper presents a comparison of three photodiode structures in terms of spectral sensitivity, noise and dark current. The three structures are n(+)/p-sub, n-well/p-sub and p(+)/n-well/p-sub. All structures were fabricated in a 0.5 mum 3-metal, 2-poly, n-well process and shared the same pixel and readout architectures. Two pixel structures were fabricated-the standard three transistor active pixel sensor, where the output depends on the photodiode capacitance, and one incorporating an in-pixel capacitive transimpedance amplifier where the output is dependent only on a designed feedback capacitor. The n-well/p-sub diode performed best in terms of sensitivity (an improvement of 3.5 x and 1.6 x over the n(+)/p-sub and p(+)/n-well/p-sub diodes, respectively) and signal-to-noise ratio (1.5 x and 1.2 x improvement over the n(+)/p-sub and p(+)/n-well/p-sub diodes, respectively) while the p(+)/n-well/p-sub diode had the minimum (33% compared to other two structures) dark current for a given sensitivity.

12 -μ m -Pitch Electromechanical Resonator for Thermal Sensing

NASA Astrophysics Data System (ADS)

Laurent, Ludovic; Yon, Jean-Jacques; Moulet, Jean-Sébastien; Roukes, Michael; Duraffourg, Laurent

2018-02-01

We provide here a demonstration of 12 -μ m -pitch nanoelectromechanical resonant infrared sensors with fully integrated capacitive transduction. A low-temperature fabrication process is used to manufacture torsional resonator arrays. An H -shaped pixel with 9 -μ m -long nanorods and (250 ×30 )-nm2 cross section is designed to provide high thermal response whose experimental measurements reach up to 1024 Hz /nW . A mechanical dynamic range of over 113 dB is obtained, which leads to an Allan deviation of σA=3 ×10-7 at room temperature and 50-Hz noise bandwidth (σA=1.5 ×10-7 over 10 Hz). These features allow us to reach a sensitivity of (8 - 12 )-μ m radiation of 27 pW / √{Hz } leading to a noise-equivalent temperature difference (NETD) of 2 K for a 50-Hz noise bandwidth (NETD =1.5 K at 10 Hz). We demonstrate that the resolution is no more set by the phonon noise but by the anomalous phase noise already encountered in flexural nanoresonators. By both improving the temperature coefficient of frequency of a factor 10 and using a readout electronics at the pixel level, these resonators will lead to a breakthrough for uncooled infrared detectors. We expect that the NETD will rapidly drop to 180 mK with electronics close to the pixel. As a result of the features of our torsional resonators, an alternative readout scheme of pixels is suggested.

Integration of the ATLAS FE-I4 Pixel Chip in the Mini Time Projection Chamber

NASA Astrophysics Data System (ADS)

Lopez-Thibodeaux, Mayra; Garcia-Sciveres, Maurice; Kadyk, John; Oliver-Mallory, Kelsey

2013-04-01

This project deals with development of readout for a Time Projection Chamber (TPC) prototype. This is a type of detector proposed for direct detection of dark matter (WIMPS) with direction information. The TPC is a gaseous charged particle tracking detector composed of a field cage and a gas avalanche detector. The latter is made of two Gas Electron Multipliers in series, illuminating a pixel readout integrated circuit, which measures the distribution in position and time of the output charge. We are testing the TPC prototype, filled with ArCO2 gas, using a Fe-55 x-ray source and cosmic rays. The present prototype uses an FE-I3 chip for readout. This chip was developed about 10 years ago and is presently in use within the ATLAS pixel detector at the LHC. The aim of this work is to upgrade the TPC prototype to use an FE-I4 chip. The FE-I4 has an active area of 336 mm^2 and 26880 pixels, over nine times the number of pixels in the FE-I3 chip, and an active area about six times as much. The FE-I4 chip represents the state of the art of pixel detector readout, and is presently being used to build an upgrade of the ATLAS pixel detector.

Characterization study of an intensified complementary metal-oxide-semiconductor active pixel sensor.

PubMed

Griffiths, J A; Chen, D; Turchetta, R; Royle, G J

2011-03-01

An intensified CMOS active pixel sensor (APS) has been constructed for operation in low-light-level applications: a high-gain, fast-light decay image intensifier has been coupled via a fiber optic stud to a prototype "VANILLA" APS, developed by the UK based MI3 consortium. The sensor is capable of high frame rates and sparse readout. This paper presents a study of the performance parameters of the intensified VANILLA APS system over a range of image intensifier gain levels when uniformly illuminated with 520 nm green light. Mean-variance analysis shows the APS saturating around 3050 Digital Units (DU), with the maximum variance increasing with increasing image intensifier gain. The system's quantum efficiency varies in an exponential manner from 260 at an intensifier gain of 7.45 × 10(3) to 1.6 at a gain of 3.93 × 10(1). The usable dynamic range of the system is 60 dB for intensifier gains below 1.8 × 10(3), dropping to around 40 dB at high gains. The conclusion is that the system shows suitability for the desired application.

Characterization study of an intensified complementary metal-oxide-semiconductor active pixel sensor

NASA Astrophysics Data System (ADS)

Griffiths, J. A.; Chen, D.; Turchetta, R.; Royle, G. J.

2011-03-01

An intensified CMOS active pixel sensor (APS) has been constructed for operation in low-light-level applications: a high-gain, fast-light decay image intensifier has been coupled via a fiber optic stud to a prototype "VANILLA" APS, developed by the UK based MI3 consortium. The sensor is capable of high frame rates and sparse readout. This paper presents a study of the performance parameters of the intensified VANILLA APS system over a range of image intensifier gain levels when uniformly illuminated with 520 nm green light. Mean-variance analysis shows the APS saturating around 3050 Digital Units (DU), with the maximum variance increasing with increasing image intensifier gain. The system's quantum efficiency varies in an exponential manner from 260 at an intensifier gain of 7.45 × 103 to 1.6 at a gain of 3.93 × 101. The usable dynamic range of the system is 60 dB for intensifier gains below 1.8 × 103, dropping to around 40 dB at high gains. The conclusion is that the system shows suitability for the desired application.

Tracking performance of a single-crystal and a polycrystalline diamond pixel-detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menasce, D.; et al.

2013-06-01

We present a comparative characterization of the performance of a single-crystal and a polycrystalline diamond pixel-detector employing the standard CMS pixel readout chips. Measurements were carried out at the Fermilab Test Beam Facility, FTBF, using protons of momentum 120 GeV/c tracked by a high-resolution pixel telescope. Particular attention was directed to the study of the charge-collection, the charge-sharing among adjacent pixels and the achievable position resolution. The performance of the single-crystal detector was excellent and comparable to the best available silicon pixel-detectors. The measured average detection-efficiency was near unity, ε = 0.99860±0.00006, and the position-resolution for shared hits was aboutmore » 6 μm. On the other hand, the performance of the polycrystalline detector was hampered by its lower charge collection distance and the readout chip threshold. A new readout chip, capable of operating at much lower threshold (around 1 ke $-$), would be required to fully exploit the potential performance of the polycrystalline diamond pixel-detector.« less

Simulations of radiation-damaged 3D detectors for the Super-LHC

NASA Astrophysics Data System (ADS)

Pennicard, D.; Pellegrini, G.; Fleta, C.; Bates, R.; O'Shea, V.; Parkes, C.; Tartoni, N.

2008-07-01

Future high-luminosity colliders, such as the Super-LHC at CERN, will require pixel detectors capable of withstanding extremely high radiation damage. In this article, the performances of various 3D detector structures are simulated with up to 1×1016 1 MeV- neq/cm2 radiation damage. The simulations show that 3D detectors have higher collection efficiency and lower depletion voltages than planar detectors due to their small electrode spacing. When designing a 3D detector with a large pixel size, such as an ATLAS sensor, different electrode column layouts are possible. Using a small number of n+ readout electrodes per pixel leads to higher depletion voltages and lower collection efficiency, due to the larger electrode spacing. Conversely, using more electrodes increases both the insensitive volume occupied by the electrode columns and the capacitive noise. Overall, the best performance after 1×1016 1 MeV- neq/cm2 damage is achieved by using 4-6 n+ electrodes per pixel.

Silicon technologies for the CLIC vertex detector

NASA Astrophysics Data System (ADS)

Spannagel, S.

2017-06-01

CLIC is a proposed linear e+e- collider designed to provide particle collisions at center-of-mass energies of up to 3 TeV. Precise measurements of the properties of the top quark and the Higgs boson, as well as searches for Beyond the Standard Model physics require a highly performant CLIC detector. In particular the vertex detector must provide a single point resolution of only a few micrometers while not exceeding the envisaged material budget of around 0.2% X0 per layer. Beam-beam interactions and beamstrahlung processes impose an additional requirement on the timestamping capabilities of the vertex detector of about 10 ns. These goals can only be met by using novel techniques in the sensor and ASIC design as well as in the detector construction. The R&D program for the CLIC vertex detector explores various technologies in order to meet these demands. The feasibility of planar sensors with a thickness of 50-150 μm, including different active edge designs, are evaluated using Timepix3 ASICs. First prototypes of the CLICpix readout ASIC, implemented in 65 nm CMOS technology and with a pixel size of 25×25μm 2, have been produced and tested in particle beams. An updated version of the ASIC with a larger pixel matrix and improved precision of the time-over-threshold and time-of-arrival measurements has been submitted. Different hybridization concepts have been developed for the interconnection between the sensor and readout ASIC, ranging from small-pitch bump bonding of planar sensors to capacitive coupling of active HV-CMOS sensors. Detector simulations based on Geant 4 and TCAD are compared with experimental results to assess and optimize the performance of the various designs. This contribution gives an overview of the R&D program undertaken for the CLIC vertex detector and presents performance measurements of the prototype detectors currently under investigation.

New amorphous-silicon image sensor for x-ray diagnostic medical imaging applications

NASA Astrophysics Data System (ADS)

Weisfield, Richard L.; Hartney, Mark A.; Street, Robert A.; Apte, Raj B.

1998-07-01

This paper introduces new high-resolution amorphous Silicon (a-Si) image sensors specifically configured for demonstrating film-quality medical x-ray imaging capabilities. The devices utilizes an x-ray phosphor screen coupled to an array of a-Si photodiodes for detecting visible light, and a-Si thin-film transistors (TFTs) for connecting the photodiodes to external readout electronics. We have developed imagers based on a pixel size of 127 micrometer X 127 micrometer with an approximately page-size imaging area of 244 mm X 195 mm, and array size of 1,536 data lines by 1,920 gate lines, for a total of 2.95 million pixels. More recently, we have developed a much larger imager based on the same pixel pattern, which covers an area of approximately 406 mm X 293 mm, with 2,304 data lines by 3,200 gate lines, for a total of nearly 7.4 million pixels. This is very likely to be the largest image sensor array and highest pixel count detector fabricated on a single substrate. Both imagers connect to a standard PC and are capable of taking an image in a few seconds. Through design rule optimization we have achieved a light sensitive area of 57% and optimized quantum efficiency for x-ray phosphor output in the green part of the spectrum, yielding an average quantum efficiency between 500 and 600 nm of approximately 70%. At the same time, we have managed to reduce extraneous leakage currents on these devices to a few fA per pixel, which allows for very high dynamic range to be achieved. We have characterized leakage currents as a function of photodiode bias, time and temperature to demonstrate high stability over these large sized arrays. At the electronics level, we have adopted a new generation of low noise, charge- sensitive amplifiers coupled to 12-bit A/D converters. Considerable attention was given to reducing electronic noise in order to demonstrate a large dynamic range (over 4,000:1) for medical imaging applications. Through a combination of low data lines capacitance, readout amplifier design, optimized timing, and noise cancellation techniques, we achieve 1,000e to 2,000e of noise for the page size and large size arrays, respectively. This allows for true 12-bit performance and quantum limited images over a wide range of x-ray exposures. Various approaches to reducing line correlated noise have been implemented and will be discussed. Images documenting the improved performance will be presented. Avenues for improvement are under development, including higher resolution 97 micrometer pixel imagers, further improvements in detective quantum efficiency, and characterization of dynamic behavior.

75 FR 82372 - Application(s) for Duty-Free Entry of Scientific Instruments

Federal Register 2010, 2011, 2012, 2013, 2014

2010-12-30

..., Argonne LLC, 9700 South Cass Ave., Lemont, IL 60439. Instrument: Pilatus 100K Pixel Detector System... efficiency (no readout noise and direct detection scheme), high dynamic range (20-bits), and fast readout.... Instrument: Pilatus 300K Pixel Detector System. Manufacturer: Dectris Ltd., Switzerland. Intended Use: The...

Innovative monolithic detector for tri-spectral (THz, IR, Vis) imaging

NASA Astrophysics Data System (ADS)

Pocas, S.; Perenzoni, M.; Massari, N.; Simoens, F.; Meilhan, J.; Rabaud, W.; Martin, S.; Delplanque, B.; Imperinetti, P.; Goudon, V.; Vialle, C.; Arnaud, A.

2012-10-01

Fusion of multispectral images has been explored for many years for security and used in a number of commercial products. CEA-Leti and FBK have developed an innovative sensor technology that gathers monolithically on a unique focal plane arrays, pixels sensitive to radiation in three spectral ranges that are terahertz (THz), infrared (IR) and visible. This technology benefits of many assets for volume market: compactness, full CMOS compatibility on 200mm wafers, advanced functions of the CMOS read-out integrated circuit (ROIC), and operation at room temperature. The ROIC houses visible APS diodes while IR and THz detections are carried out by microbolometers collectively processed above the CMOS substrate. Standard IR bolometric microbridges (160x160 pixels) are surrounding antenna-coupled bolometers (32X32 pixels) built on a resonant cavity customized to THz sensing. This paper presents the different technological challenges achieved in this development and first electrical and sensitivity experimental tests.

Studies of prototype DEPFET sensors for the Wide Field Imager of Athena

NASA Astrophysics Data System (ADS)

Treberspurg, Wolfgang; Andritschke, Robert; Bähr, Alexander; Behrens, Annika; Hauser, Günter; Lechner, Peter; Meidinger, Norbert; Müller-Seidlitz, Johannes; Treis, Johannes

2017-08-01

The Wide Field Imager (WFI) of ESA's next X-ray observatory Athena will combine a high count rate capability with a large field of view, both with state-of-the-art spectroscopic performance. To meet these demands, specific DEPFET active pixel detectors have been developed and operated. Due to the intrinsic amplification of detected signals they are best suited to achieve a high speed and low noise performance. Different fabrication technologies and transistor geometries have been implemented on a dedicated prototype production in the course of the development of the DEPFET sensors. The main modifications between the sensors concern the shape of the transistor gate - regarding the layout - and the thickness of the gate oxide - regarding the technology. To facilitate the fabrication and testing of the resulting variety of sensors the presented studies were carried out with 64×64 pixel detectors. The detector comprises a control ASIC (Switcher-A), a readout ASIC (VERITAS- 2) and the sensor. In this paper we give an overview on the evaluation of different prototype sensors. The most important results, which have been decisive for the identification of the optimal fabrication technology and transistor layout for subsequent sensor productions are summarized. It will be shown that the developments result in an excellent performance of spectroscopic X-ray DEPFETs with typical noise values below 2.5 ENC at 2.5 μs/row.

Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation

NASA Astrophysics Data System (ADS)

Choi, Byoung-Soo; Jo, Sung-Hyun; Bae, Myunghan; Kim, Sang-Hwan; Shin, Jang-Kyoo

2016-05-01

In this paper, a binary complementary metal oxide semiconductor (CMOS) image sensor with a gate/body-tied (GBT) metal oxide semiconductor field effect transistor (MOSFET)-type photodetector is presented. The sensitivity of the GBT MOSFET-type photodetector, which was fabricated using the standard CMOS 0.35-μm process, is higher than the sensitivity of the p-n junction photodiode, because the output signal of the photodetector is amplified by the MOSFET. A binary image sensor becomes more efficient when using this photodetector. Lower power consumptions and higher speeds of operation are possible, compared to the conventional image sensors using multi-bit analog to digital converters (ADCs). The frame rate of the proposed image sensor is over 2000 frames per second, which is higher than those of the conventional CMOS image sensors. The output signal of an active pixel sensor is applied to a comparator and compared with a reference level. The 1-bit output data of the binary process is determined by this level. To obtain a video signal, the 1-bit output data is stored in the memory and is read out by horizontal scanning. The proposed chip is composed of a GBT pixel array (144 × 100), binary-process circuit, vertical scanner, horizontal scanner, and readout circuit. The operation mode can be selected from between binary mode and multi-bit mode.

Review of the development of diamond radiation sensors

NASA Astrophysics Data System (ADS)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-09-01

Diamond radiation sensors produced by chemical vapour deposition are studied for the application as tracking detectors in high luminosity experiments. Sensors with a charge collection distance up to 250 μm have been manufactured. Their radiation hardness has been studied with pions, proton and neutrons up to fluences of 1.9×10 15 π cm -2, 5×10 15 p cm -2 and 1.35×10 15 n cm -2, respectively. Diamond micro-strip detectors with 50 μm pitch have been exposed in a high-energy test beam in order to investigate their charge collection properties. The measured spatial resolution using a centre-of-gravity position finding algorithm corresponds to the digital resolution for this strip pitch. First results from a strip tracker with a 2×4 cm 2 surface area are reported as well as the performance of a diamond tracker read out by radiation-hard electronics with 25 ns shaping time. Diamond pixel sensors have been prepared to match the geometries of the recently available read-out chip prototypes for ATLAS and CMS. Beam test results are shown from a diamond detector bump-bonded to an ATLAS prototype read-out. They demonstrate a 98% bump-bonding efficiency and a digital resolution in both dimensions.

The E and B EXperiment: EBEX

NASA Astrophysics Data System (ADS)

Helson, Kyle

2014-03-01

We report on the status of the E and B Experiment (EBEX) a balloon-borne polarimeter designed to measure the polarization of the cosmic microwave background radiation. The instrument employs a 1.5 meter Gregorian Mizuguchi-Dragone telescope providing 8 arc-minute resolution at three bands centered on 150, 250, and 410 GHz. A continuously rotating achromatic half wave plate, mounted on a superconducting magnetic bearing, and a polarizing grid give EBEX polarimetric capabilities. Radiation is detected with a kilo-pixel array of transition edge sensor (TES) bolometers that are cooled to 0.25 K. The detectors are readout using SQUID current amplifiers and a digital frequency-domain multiplexing system in which 16 detectors are readout simultaneously with two wires. EBEX is the first instrument to implement TESs and such readout system on board a balloon-borne platform. EBEX was launched from the Antarctic in December 2012 on an 11-day long-duration balloon flight. This presentation will provide an overview of the instrument and discuss the flight and status of the data analysis.

Readout architecture for sub-nanosecond resolution TDC

NASA Astrophysics Data System (ADS)

Marteau, J.; Carlus, B.; Gardien, S.; Girerd, C.; Ianigro, J.-C.; Montorio, J.-L.; Gibert, D.; Nicollin, F.

2012-04-01

The DIAPHANE project is pluri-disciplinary collaboration between particle physicists and geophysicists to perform the tomography of large geological structure mainly devoted to the study of active volcanoes. The detector used for this tomography, hereafter referred to as telescope, uses a standard, robust, cost-effective and well-known technology based on solid plastic scintillator readout by photomultiplier(s) (either multichannel pixelized PM or silicon PM). The electronics system is built on the concept of autonomous, triggerless, smart sensor directly connected on a standard fast Ethernet network. First radiographies have been performed on the Mont-Terri underground laboratory (St-Ursanne, Switzerland) and on the active volcano of La Soufrière (Guadeloupe, Lesser Antilles, France). We present an upgrade of the readout architecture allowing to embed a sub-nanosecond resolution TDC within the existing programmable logic to help in the background rejection (rear flux, random coincidences) and to improve the detection purity and the radiography quality. First results obtained are also presented and briefly discussed.

Improved Space Object Orbit Determination Using CMOS Detectors

NASA Astrophysics Data System (ADS)

Schildknecht, T.; Peltonen, J.; Sännti, T.; Silha, J.; Flohrer, T.

2014-09-01

CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contains their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, we simulated several observation scenarios for ground- and space-based sensor by assuming different observation and sensor properties. We will introduce the analyzed end-to-end simulations of the ground- and space-based strategies in order to investigate the orbit determination accuracy and its sensitivity which may result from different values for the frame-rate, pixel scale, astrometric and epoch registration accuracies. Two cases were simulated, a survey using a ground-based sensor to observe objects in LEO for surveillance applications, and a statistical survey with a space-based sensor orbiting in LEO observing small-size debris in LEO. The ground-based LEO survey uses a dynamical fence close to the Earth shadow a few hours after sunset. For the space-based scenario a sensor in a sun-synchronous LEO orbit, always pointing in the anti-sun direction to achieve optimum illumination conditions for small LEO debris, was simulated. For the space-based scenario the simulations showed a 20 130 % improvement of the accuracy of all orbital parameters when varying the frame rate from 1/3 fps, which is the fastest rate for a typical CCD detector, to 50 fps, which represents the highest rate of scientific CMOS cameras. Changing the epoch registration accuracy from a typical 20.0 ms for a mechanical shutter to 0.025 ms, the theoretical value for the electronic shutter of a CMOS camera, improved the orbit accuracy by 4 to 190 %. The ground-based scenario also benefit from the specific CMOS characteristics, but to a lesser extent.

Studies for a 10 μs, thin, high resolution CMOS pixel sensor for future vertex detectors

NASA Astrophysics Data System (ADS)

Voutsinas, G.; Amar-Youcef, S.; Baudot, J.; Bertolone, G.; Brogna, A.; Chon-Sen, N.; Claus, G.; Colledani, C.; Dorokhov, A.; Dozière, G.; Dulinski, W.; Degerli, Y.; De Masi, R.; Deveaux, M.; Gelin, M.; Goffe, M.; Hu-Guo, Ch.; Himmi, A.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Müntz, C.; Orsini, F.; Santos, C.; Schrader, C.; Specht, M.; Stroth, J.; Valin, I.; Wagner, F. M.; Winter, M.

2011-06-01

Future high energy physics (HEP) experiments require detectors with unprecedented performances for track and vertex reconstruction. These requirements call for high precision sensors, with low material budget and short integration time. The development of CMOS sensors for HEP applications was initiated at IPHC Strasbourg more than 10 years ago, motivated by the needs for vertex detectors at the International Linear Collider (ILC) [R. Turchetta et al, NIM A 458 (2001) 677]. Since then several other applications emerged. The first real scale digital CMOS sensor MIMOSA26 equips Flavour Tracker at RHIC, as well as for the microvertex detector of the CBM experiment at FAIR. MIMOSA sensors may also offer attractive performances for the ALICE upgrade at LHC. This paper will demonstrate the substantial performance improvement of CMOS sensors based on a high resistivity epitaxial layer. First studies for integrating the sensors into a detector system will be addressed and finally the way to go to a 10 μs readout sensor will be discussed.

A novel digital image sensor with row wise gain compensation for Hyper Spectral Imager (HySI) application

NASA Astrophysics Data System (ADS)

Lin, Shengmin; Lin, Chi-Pin; Wang, Weng-Lyang; Hsiao, Feng-Ke; Sikora, Robert

2009-08-01

A 256x512 element digital image sensor has been developed which has a large pixel size, slow scan and low power consumption for Hyper Spectral Imager (HySI) applications. The device is a mixed mode, silicon on chip (SOC) IC. It combines analog circuitry, digital circuitry and optical sensor circuitry into a single chip. This chip integrates a 256x512 active pixel sensor array, a programming gain amplifier (PGA) for row wise gain setting, I2C interface, SRAM, 12 bit analog to digital convertor (ADC), voltage regulator, low voltage differential signal (LVDS) and timing generator. The device can be used for 256 pixels of spatial resolution and 512 bands of spectral resolution ranged from 400 nm to 950 nm in wavelength. In row wise gain readout mode, one can set a different gain on each row of the photo detector by storing the gain setting data on the SRAM thru the I2C interface. This unique row wise gain setting can be used to compensate the silicon spectral response non-uniformity problem. Due to this unique function, the device is suitable for hyper-spectral imager applications. The HySI camera located on-board the Chandrayaan-1 satellite, was successfully launched to the moon on Oct. 22, 2008. The device is currently mapping the moon and sending back excellent images of the moon surface. The device design and the moon image data will be presented in the paper.

Large area thinned planar sensors for future high-luminosity-LHC upgrades

NASA Astrophysics Data System (ADS)

Wittig, T.; Lawerenz, A.; Röder, R.

2016-12-01

Planar hybrid silicon sensors are a well proven technology for past and current particle tracking detectors in HEP experiments. However, the future high-luminosity upgrades of the inner trackers at the LHC experiments pose big challenges to the detectors. A first challenge is an expected radiation damage level of up to 2ṡ 1016 neq/cm2. For planar sensors, one way to counteract the charge loss and thus increase the radiation hardness is to decrease the thickness of their active area. A second challenge is the large detector area which has to be built as cost-efficient as possible. The CiS research institute has accomplished a proof-of-principle run with n-in-p ATLAS-Pixel sensors in which a cavity is etched to the sensor's back side to reduce its thickness. One advantage of this technology is the fact that thick frames remain at the sensor edges and guarantee mechanical stability on wafer level while the sensor is left on the resulting thin membrane. For this cavity etching technique, no handling wafers are required which represents a benefit in terms of process effort and cost savings. The membranes with areas of up to ~ 4 × 4 cm2 and thicknesses of 100 and 150 μm feature a sufficiently good homogeneity across the whole wafer area. The processed pixel sensors show good electrical behaviour with an excellent yield for a suchlike prototype run. First sensors with electroless Ni- and Pt-UBM are already successfully assembled with read-out chips.

A 65k pixel, 150k frames-per-second camera with global gating and micro-lenses suitable for fluorescence lifetime imaging

NASA Astrophysics Data System (ADS)

Burri, Samuel; Powolny, François; Bruschini, Claudio E.; Michalet, Xavier; Regazzoni, Francesco; Charbon, Edoardo

2014-05-01

This paper presents our work on a 65k pixel single-photon avalanche diode (SPAD) based imaging sensor realized in a 0.35μm standard CMOS process. At a resolution of 512 by 128 pixels the sensor is read out in 6.4μs to deliver over 150k monochrome frames per second. The individual pixel has a size of 24μm2 and contains the SPAD with a 12T quenching and gating circuitry along with a memory element. The gating signals are distributed across the chip through a balanced tree to minimize the signal skew between the pixels. The array of pixels is row-addressable and data is sent out of the chip on 128 lines in parallel at a frequency of 80MHz. The system is controlled by an FPGA which generates the gating and readout signals and can be used for arbitrary real-time computation on the frames from the sensor. The communication protocol between the camera and a conventional PC is USB2. The active area of the chip is 5% and can be significantly improved with the application of a micro-lens array. A micro-lens array, for use with collimated light, has been designed and its performance is reviewed in the paper. Among other high-speed phenomena the gating circuitry capable of generating illumination periods shorter than 5ns can be used for Fluorescence Lifetime Imaging (FLIM). In order to measure the lifetime of fluorophores excited by a picosecond laser, the sensor's illumination period is synchronized with the excitation laser pulses. A histogram of the photon arrival times relative to the excitation is then constructed by counting the photons arriving during the sensitive time for several positions of the illumination window. The histogram for each pixel is transferred afterwards to a computer where software routines extract the lifetime at each location with an accuracy better than 100ps. We show results for fluorescence lifetime measurements using different fluorophores with lifetimes ranging from 150ps to 5ns.

Preliminary Results of 3D-DDTC Pixel Detectors for the ATLAS Upgrade

DOE Office of Scientific and Technical Information (OSTI.GOV)

La Rosa, Alessandro; /CERN; Boscardin, M.

2012-04-04

3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180 GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200 {mu}m, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110 {mu}m to 150 {mu}m. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3)more » at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am{sup 241} {gamma}-ray sources, charge collection tests with Sr90 {beta}-source and an overview of preliminary results from the CERN beam test.« less

A kilo-pixel imaging system for future space based far-infrared observatories using microwave kinetic inductance detectors

NASA Astrophysics Data System (ADS)

Baselmans, J. J. A.; Bueno, J.; Yates, S. J. C.; Yurduseven, O.; Llombart, N.; Karatsu, K.; Baryshev, A. M.; Ferrari, L.; Endo, A.; Thoen, D. J.; de Visser, P. J.; Janssen, R. M. J.; Murugesan, V.; Driessen, E. F. C.; Coiffard, G.; Martin-Pintado, J.; Hargrave, P.; Griffin, M.

2017-05-01

Aims: Future astrophysics and cosmic microwave background space missions operating in the far-infrared to millimetre part of the spectrum will require very large arrays of ultra-sensitive detectors in combination with high multiplexing factors and efficient low-noise and low-power readout systems. We have developed a demonstrator system suitable for such applications. Methods: The system combines a 961 pixel imaging array based upon Microwave Kinetic Inductance Detectors (MKIDs) with a readout system capable of reading out all pixels simultaneously with only one readout cable pair and a single cryogenic amplifier. We evaluate, in a representative environment, the system performance in terms of sensitivity, dynamic range, optical efficiency, cosmic ray rejection, pixel-pixel crosstalk and overall yield at an observation centre frequency of 850 GHz and 20% fractional bandwidth. Results: The overall system has an excellent sensitivity, with an average detector sensitivity < NEPdet> =3×10-19 WHz measured using a thermal calibration source. At a loading power per pixel of 50 fW we demonstrate white, photon noise limited detector noise down to 300 mHz. The dynamic range would allow the detection of 1 Jy bright sources within the field of view without tuning the readout of the detectors. The expected dead time due to cosmic ray interactions, when operated in an L2 or a similar far-Earth orbit, is found to be <4%. Additionally, the achieved pixel yield is 83% and the crosstalk between the pixels is <-30 dB. Conclusions: This demonstrates that MKID technology can provide multiplexing ratios on the order of a 1000 with state-of-the-art single pixel performance, and that the technology is now mature enough to be considered for future space based observatories and experiments.

The TT-PET project: a thin TOF-PET scanner based on fast novel silicon pixel detectors

NASA Astrophysics Data System (ADS)

Bandi, Y.; Benoit, M.; Cadoux, F. R.; Forshaw, D. C.; Hänni, R.; Hayakawa, D.; Iacobucci, G.; Michal, S.; Miucci, A.; Paolozzi, L.; Ratib, O.; Ripiccini, E.; Tognina, C.; Valerio, P.; Weber, M.

2018-01-01

The TT-PET project aims at developing a compact Time-of-flight PET scanner with 30ps time resolution, capable of withstanding high magnetic fields and allowing for integration in a traditional MRI scanner, providing complimentary real-time PET images. The very high timing resolution of the TT-PET scanner is achieved thanks to a new generation of Silicon-Germanium (Si-Ge) amplifiers, which are embedded in monolithic pixel sensors. The scanner is composed of 16 detection towers as well as cooling blocks, arranged in a ring structure. The towers are composed of multiple ultra-thin pixel modules stacked on top of each other. Making it possible to perform depth of interaction measurements and maximize the spatial resolution along the line of flight of the two photons emitted within a patient. This will result in improved image quality, contrast, and uniformity while drastically reducing backgrounds within the scanner. Allowing for a reduction in the amount of radioactivity delivered to the patient. Due to an expected data rate of about 250 MB/s a custom readout system for high data throughput has been developed, which includes noise filtering and reduced data pressure. The realisation of a first scanner prototype for small animals is foreseen by 2019. A general overview of the scanner will be given including, technical details concerning the detection elements, mechanics, DAQ readout, simulation and results.

Report on recent results of the PERCIVAL soft X-ray imager

NASA Astrophysics Data System (ADS)

Khromova, A.; Cautero, G.; Giuressi, D.; Menk, R.; Pinaroli, G.; Stebel, L.; Correa, J.; Marras, A.; Wunderer, C. B.; Lange, S.; Tennert, M.; Niemann, M.; Hirsemann, H.; Smoljanin, S.; Reza, S.; Graafsma, H.; Göttlicher, P.; Shevyakov, I.; Supra, J.; Xia, Q.; Zimmer, M.; Guerrini, N.; Marsh, B.; Sedgwick, I.; Nicholls, T.; Turchetta, R.; Pedersen, U.; Tartoni, N.; Hyun, H. J.; Kim, K. S.; Rah, S. Y.; Hoenk, M. E.; Jewell, A. D.; Jones, T. J.; Nikzad, S.

2016-11-01

The PERCIVAL (Pixelated Energy Resolving CMOS Imager, Versatile And Large) soft X-ray 2D imaging detector is based on stitched, wafer-scale sensors possessing a thick epi-layer, which together with back-thinning and back-side illumination yields elevated quantum efficiency in the photon energy range of 125-1000 eV. Main application fields of PERCIVAL are foreseen in photon science with FELs and synchrotron radiation. This requires high dynamic range up to 105 ph @ 250 eV paired with single photon sensitivity with high confidence at moderate frame rates in the range of 10-120 Hz. These figures imply the availability of dynamic gain switching on a pixel-by-pixel basis and a highly parallel, low noise analog and digital readout, which has been realized in the PERCIVAL sensor layout. Different aspects of the detector performance have been assessed using prototype sensors with different pixel and ADC types. This work will report on the recent test results performed on the newest chip prototypes with the improved pixel and ADC architecture. For the target frame rates in the 10-120 Hz range an average noise floor of 14e- has been determined, indicating the ability of detecting single photons with energies above 250 eV. Owing to the successfully implemented adaptive 3-stage multiple-gain switching, the integrated charge level exceeds 4 · 106 e- or 57000 X-ray photons at 250 eV per frame at 120 Hz. For all gains the noise level remains below the Poisson limit also in high-flux conditions. Additionally, a short overview over the updates on an oncoming 2 Mpixel (P2M) detector system (expected at the end of 2016) will be reported.

Development of a cylindrical tracking detector with multichannel scintillation fibers and pixelated photon detector readout

NASA Astrophysics Data System (ADS)

Akazawa, Y.; Miwa, K.; Honda, R.; Shiozaki, T.; Chiga, N.

2015-07-01

We are developing a cylindrical tracking detector for a Σp scattering experiment in J-PARC with scintillation fibers and the Pixelated Photon Detector (PPD) readout, which is called as cylindrical fiber tracker (CFT), in order to reconstruct trajectories of charged particles emitted inside CFT. CFT works not only as a tracking detector but also a particle identification detector from energy deposits. A prototype CFT consisting of two straight layers and one spiral layer was constructed. About 1100 scintillation fibers with a diameter of 0.75 mm (Kuraray SCSF-78 M) were used. Each fiber signal was read by Multi-Pixel Photon Counter (MPPC, HPK S10362-11-050P, 1×1 mm2, 400 pixels) fiber by fiber. MPPCs were handled with Extended Analogue Silicon Photomultipliers Integrated ReadOut Chip (EASIROC) boards, which were developed for the readout of a large number of MPPCs. The energy resolution of one layer was 28% for a 70 MeV proton where the energy deposit in fibers was 0.7 MeV.

Characterization of a 512x512-pixel 8-output full-frame CCD for high-speed imaging

NASA Astrophysics Data System (ADS)

Graeve, Thorsten; Dereniak, Eustace L.

1993-01-01

The characterization of a 512 by 512 pixel, eight-output full frame CCD manufactured by English Electric Valve under part number CCD13 is discussed. This device is a high- resolution Silicon-based array designed for visible imaging applications at readout periods as low as two milliseconds. The characterization of the device includes mean-variance analysis to determine read noise and dynamic range, as well as charge transfer efficiency, MTF, and quantum efficiency measurements. Dark current and non-uniformity issues on a pixel-to-pixel basis and between individual outputs are also examined. The characterization of the device is restricted by hardware limitations to a one MHz pixel rate, corresponding to a 40 ms readout time. However, subsections of the device have been operated at up to an equivalent 100 frames per second. To maximize the frame rate, the CCD is illuminated by a synchronized strobe flash in between frame readouts. The effects of the strobe illumination on the imagery obtained from the device is discussed.

The CHROMA focal plane array: a large-format, low-noise detector optimized for imaging spectroscopy

NASA Astrophysics Data System (ADS)

Demers, Richard T.; Bailey, Robert; Beletic, James W.; Bernd, Steve; Bhargava, Sidharth; Herring, Jason; Kobrin, Paul; Lee, Donald; Pan, Jianmei; Petersen, Anders; Piquette, Eric; Starr, Brian; Yamamoto, Matthew; Zandian, Majid

2013-09-01

The CHROMA (Configurable Hyperspectral Readout for Multiple Applications) is an advanced Focal Plane Array (FPA) designed for visible-infrared imaging spectroscopy. Using Teledyne's latest substrateremoved HgCdTe detector, the CHROMA FPA has very low dark current, low readout noise and high, stable quantum efficiency from the deep blue (390nm) to the cutoff wavelength. CHROMA has a pixel pitch of 30 microns and is available in array formats ranging from 320×480 to 1600×480 pixels. Users generally disperse spectra over the 480 pixel-length columns and image spatially over the n×160 pixellength rows, where n=2, 4, 8, 10. The CHROMA Readout Integrated Circuit (ROIC) has Correlated Double Sampling (CDS) in pixel and generates its own internal bias signals and clocks. This paper presents the measured performance of the CHROMA FPA with 2.5 micron cutoff wavelength including the characterization of noise versus pixel gain, power dissipation and quantum efficiency.

X-ray imaging using amorphous selenium: a photoinduced discharge readout method for digital mammography.

PubMed

Rowlands, J A; Hunter, D M; Araj, N

1991-01-01

A new digital image readout method for electrostatic charge images on photoconductive plates is described. The method can be used to read out images on selenium plates similar to those used in xeromammography. The readout method, called the air-gap photoinduced discharge method (PID), discharges the latent image pixel by pixel and measures the charge. The PID readout method, like electrometer methods, is linear. However, the PID method permits much better resolution than scanning electrometers while maintaining quantum limited performance at high radiation exposure levels. Thus the air-gap PID method appears to be uniquely superior for high-resolution digital imaging tasks such as mammography.

3-D readout-electronics packaging for high-bandwidth massively paralleled imager

DOEpatents

Kwiatkowski, Kris; Lyke, James

2007-12-18

Dense, massively parallel signal processing electronics are co-packaged behind associated sensor pixels. Microchips containing a linear or bilinear arrangement of photo-sensors, together with associated complex electronics, are integrated into a simple 3-D structure (a "mirror cube"). An array of photo-sensitive cells are disposed on a stacked CMOS chip's surface at a 45.degree. angle from light reflecting mirror surfaces formed on a neighboring CMOS chip surface. Image processing electronics are held within the stacked CMOS chip layers. Electrical connections couple each of said stacked CMOS chip layers and a distribution grid, the connections for distributing power and signals to components associated with each stacked CSMO chip layer.

Frequency-multiplexed bias and readout of a 16-pixel superconducting nanowire single-photon detector array

NASA Astrophysics Data System (ADS)

Doerner, S.; Kuzmin, A.; Wuensch, S.; Charaev, I.; Boes, F.; Zwick, T.; Siegel, M.

2017-07-01

We demonstrate a 16-pixel array of microwave-current driven superconducting nanowire single-photon detectors with an integrated and scalable frequency-division multiplexing architecture, which reduces the required number of bias and readout lines to a single microwave feed line. The electrical behavior of the photon-sensitive nanowires, embedded in a resonant circuit, as well as the optical performance and timing jitter of the single detectors is discussed. Besides the single pixel measurements, we also demonstrate the operation of a 16-pixel array with a temporal, spatial, and photon-number resolution.

The DCU: the detector control unit for SPICA-SAFARI

NASA Astrophysics Data System (ADS)

Clénet, Antoine; Ravera, Laurent; Bertrand, Bernard; den Hartog, Roland H.; Jackson, Brian D.; van Leeuven, Bert-Joost; van Loon, Dennis; Parot, Yann; Pointecouteau, Etienne; Sournac, Anthony

2014-08-01

IRAP is developing the warm electronic, so called Detector Control Unit" (DCU), in charge of the readout of the SPICA-SAFARI's TES type detectors. The architecture of the electronics used to readout the 3 500 sensors of the 3 focal plane arrays is based on the frequency domain multiplexing technique (FDM). In each of the 24 detection channels the data of up to 160 pixels are multiplexed in frequency domain between 1 and 3:3 MHz. The DCU provides the AC signals to voltage-bias the detectors; it demodulates the detectors data which are readout in the cold by a SQUID; and it computes a feedback signal for the SQUID to linearize the detection chain in order to optimize its dynamic range. The feedback is computed with a specific technique, so called baseband feedback (BBFB) which ensures that the loop is stable even with long propagation and processing delays (i.e. several µs) and with fast signals (i.e. frequency carriers at 3:3 MHz). This digital signal processing is complex and has to be done at the same time for the 3 500 pixels. It thus requires an optimisation of the power consumption. We took the advantage of the relatively reduced science signal bandwidth (i.e. 20 - 40 Hz) to decouple the signal sampling frequency (10 MHz) and the data processing rate. Thanks to this method we managed to reduce the total number of operations per second and thus the power consumption of the digital processing circuit by a factor of 10. Moreover we used time multiplexing techniques to share the resources of the circuit (e.g. a single BBFB module processes 32 pixels). The current version of the firmware is under validation in a Xilinx Virtex 5 FPGA, the final version will be developed in a space qualified digital ASIC. Beyond the firmware architecture the optimization of the instrument concerns the characterization routines and the definition of the optimal parameters. Indeed the operation of the detection and readout chains requires to properly define more than 17 500 parameters (about 5 parameters per pixel). Thus it is mandatory to work out an automatic procedure to set up these optimal values. We defined a fast algorithm which characterizes the phase correction to be applied by the BBFB firmware and the pixel resonance frequencies. We also defined a technique to define the AC-carrier initial phases in such a way that the amplitude of their sum is minimized (for a better use of the DAC dynamic range).

New concept of a submillimetric pixellated Silicon detector for intracerebral application

NASA Astrophysics Data System (ADS)

Benoit, M.; Märk, J.; Weiss, P.; Benoit, D.; Clemens, J. C.; Fougeron, D.; Janvier, B.; Jevaud, M.; Karkar, S.; Menouni, M.; Pain, F.; Pinot, L.; Morel, C.; Laniece, P.

2011-12-01

A new beta+ radiosensitive microprobe implantable in rodent brain dedicated to in vivo and autonomous measurements of local time activity curves of beta radiotracers in a volume of brain tissue of a few mm3 has been developed recently. This project expands the concept of the previously designed beta microprobe, which has been validated extensively in neurobiological experiments performed on anesthetized animals. Due to its limitations considering recordings on awake and freely moving animals, we have proposed to develop a wireless setup that can be worn by an animal without constraining its movements. To that aim, we have chosen a highly beta sensitive Silicon-based detector to devise a compact pixellated probe. Miniaturized wireless electronics is used to read-out and transfer the measurement data. Initial Monte-Carlo simulations showed that high resistive Silicon pixels are appropriate for this purpose, with their dimensions to be adapted to our specific signals. More precisely, we demonstrated that 200 μm thick pixels with an area of 200 μm×500 μm are optimized in terms of beta+sensitivity versus relative transparency to the gamma background. Based on this theoretical study, we now present the development of the novel sensor, including the system simulations with technology computer-assisted design (TCAD) to investigate specific configurations of guard rings and their potential to increase the electrical isolation and stabilization of the pixel, as well as the corresponding physical tests to validate the particular geometries of this new sensor.

SOI CMOS Imager with Suppression of Cross-Talk

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Zheng, Xingyu; Cunningham, Thomas J.; Seshadri, Suresh; Sun, Chao

2009-01-01

A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

Digital radiology using active matrix readout: amplified pixel detector array for fluoroscopy.

PubMed

Matsuura, N; Zhao, W; Huang, Z; Rowlands, J A

1999-05-01

Active matrix array technology has made possible the concept of flat panel imaging systems for radiography. In the conventional approach a thin-film circuit built on glass contains the necessary switching components (thin-film transistors or TFTs) to readout an image formed in either a phosphor or photoconductor layer. Extension of this concept to real time imaging--fluoroscopy--has had problems due to the very low noise required. A new design strategy for fluoroscopic active matrix flat panel detectors has therefore been investigated theoretically. In this approach, the active matrix has integrated thin-film amplifiers and readout electronics at each pixel and is called the amplified pixel detector array (APDA). Each amplified pixel consists of three thin-film transistors: an amplifier, a readout, and a reset TFT. The performance of the APDA approach compared to the conventional active matrix was investigated for two semiconductors commonly used to construct active matrix arrays--hydrogenated amorphous silicon and polycrystalline silicon. The results showed that with amplification close to the pixel, the noise from the external charge preamplifiers becomes insignificant. The thermal and flicker noise of the readout and the amplifying TFTs at the pixel become the dominant sources of noise. The magnitude of these noise sources is strongly dependent on the TFT geometry and its fabrication process. Both of these could be optimized to make the APDA active matrix operate at lower noise levels than is possible with the conventional approach. However, the APDA cannot be made to operate ideally (i.e., have noise limited only by the amount of radiation used) at the lowest exposure rate required in medical fluoroscopy.

SAPHIRA detector for infrared wavefront sensing

NASA Astrophysics Data System (ADS)

Finger, Gert; Baker, Ian; Alvarez, Domingo; Ives, Derek; Mehrgan, Leander; Meyer, Manfred; Stegmeier, Jörg; Weller, Harald J.

2014-08-01

The only way to overcome the CMOS noise barrier of near infrared sensors used for wavefront sensing and fringe tracking is the amplification of the photoelectron signal inside the infrared pixel by means of the avalanche gain. In 2007 ESO started a program at Selex to develop near infrared electron avalanche photodiode arrays (eAPD) for wavefront sensing and fringe tracking. In a first step the cutoff wavelength was reduced from 4.5 micron to 2.5 micron in order to verify that the dark current scales with the bandgap and can be reduced to less than one electron/ms, the value required for wavefront sensing. The growth technology was liquid phase epitaxy (LPE) with annular diodes based on the loophole interconnect technology. The arrays required deep cooling to 40K to achieve acceptable cosmetic performance at high APD gain. The second step was to develop a multiplexer tailored to the specific application of the GRAVITY instrument wavefront sensors and the fringe tracker. The pixel format is 320x256 pixels. The array has 32 parallel video outputs which are arranged in such a way that the full multiplex advantage is available also for small subwindows. Nondestructive readout schemes with subpixel sampling are possible. This reduces the readout noise at high APD gain well below the subelectron level at frame rates of 1 KHz. The third step was the change of the growth technology from liquid phase epitaxy to metal organic vapour phase epitaxy (MOVPE). This growth technology allows the band structure and doping to be controlled on a 0.1μm scale and provides more flexibility for the design of diode structures. The bandgap can be varied for different layers of Hg(1-x)CdxTe. It is possible to make heterojunctions and apply solid state engineering techniques. The change to MOVPE resulted in a dramatic improvement in the cosmetic quality with 99.97 % operable pixels at an operating temperature of 85K. Currently this sensor is deployed in the 4 wavefront sensors and in the fringe tracker of the VLT instrument GRAVITY. Initial results will be presented. An outlook will be given on the potential of APD technology to be employed in large format near infrared science detectors. Several of the results presented here have also been shown to a different audience at the Scientific Detector Workshop in October 2013 in Florence but this paper has been updated with new results [1].

Design of the low area monotonic trim DAC in 40 nm CMOS technology for pixel readout chips

NASA Astrophysics Data System (ADS)

Drozd, A.; Szczygiel, R.; Maj, P.; Satlawa, T.; Grybos, P.

2014-12-01

The recent research in hybrid pixel detectors working in single photon counting mode focuses on nanometer or 3D technologies which allow making pixels smaller and implementing more complex solutions in each of the pixels. Usually single pixel in readout electronics for X-ray detection comprises of charge amplifier, shaper and discriminator that allow classification of events occurring at the detector as true or false hits by comparing amplitude of the signal obtained with threshold voltage, which minimizes the influence of noise effects. However, making the pixel size smaller often causes problems with pixel to pixel uniformity and additional effects like charge sharing become more visible. To improve channel-to-channel uniformity or implement an algorithm for charge sharing effect minimization, small area trimming DACs working in each pixel independently are necessary. However, meeting the requirement of small area often results in poor linearity and even non-monotonicity. In this paper we present a novel low-area thermometer coded 6-bit DAC implemented in 40 nm CMOS technology. Monte Carlo simulations were performed on the described design proving that under all conditions designed DAC is inherently monotonic. Presented DAC was implemented in the prototype readout chip with 432 pixels working in single photon counting mode, with two trimming DACs in each pixel. Each DAC occupies the area of 8 μm × 18.5 μm. Measurements and chips' tests were performed to obtain reliable statistical results.

Photon counting readout pixel array in 0.18-μm CMOS technology for on-line gamma-ray imaging of 103palladium seeds for permanent breast seed implant (PBSI) brachytherapy

NASA Astrophysics Data System (ADS)

Goldan, A. H.; Karim, K. S.; Reznik, A.; Caldwell, C. B.; Rowlands, J. A.

2008-03-01

Permanent breast seed implant (PBSI) brachytherapy technique was recently introduced as an alternative to high dose rate (HDR) brachytherapy and involves the permanent implantation of radioactive 103Palladium seeds into the surgical cavity of the breast for cancer treatment. To enable accurate seed implantation, this research introduces a gamma camera based on a hybrid amorphous selenium detector and CMOS readout pixel architecture for real-time imaging of 103Palladium seeds during the PBSI procedure. A prototype chip was designed and fabricated in 0.18-μm n-well CMOS process. We present the experimental results obtained from this integrated photon counting readout pixel.

Development of a Real-Time Pulse Processing Algorithm for TES-Based X-Ray Microcalorimeters

NASA Technical Reports Server (NTRS)

Tan, Hui; Hennig, Wolfgang; Warburton, William K.; Doriese, W. Bertrand; Kilbourne, Caroline A.

2011-01-01

We report here a real-time pulse processing algorithm for superconducting transition-edge sensor (TES) based x-ray microcalorimeters. TES-based. microca1orimeters offer ultra-high energy resolutions, but the small volume of each pixel requires that large arrays of identical microcalorimeter pixe1s be built to achieve sufficient detection efficiency. That in turn requires as much pulse processing as possible must be performed at the front end of readout electronics to avoid transferring large amounts of data to a host computer for post-processing. Therefore, a real-time pulse processing algorithm that not only can be implemented in the readout electronics but also achieve satisfactory energy resolutions is desired. We have developed an algorithm that can be easily implemented. in hardware. We then tested the algorithm offline using several data sets acquired with an 8 x 8 Goddard TES x-ray calorimeter array and 2x16 NIST time-division SQUID multiplexer. We obtained an average energy resolution of close to 3.0 eV at 6 keV for the multiplexed pixels while preserving over 99% of the events in the data sets.

Dual-gate photo thin-film transistor: a “smart” pixel for high- resolution and low-dose X-ray imaging

NASA Astrophysics Data System (ADS)

Wang, Kai; Ou, Hai; Chen, Jun

2015-06-01

Since its emergence a decade ago, amorphous silicon flat panel X-ray detector has established itself as a ubiquitous platform for an array of digital radiography modalities. The fundamental building block of a flat panel detector is called a pixel. In all current pixel architectures, sensing, storage, and readout are unanimously kept separate, inevitably compromising resolution by increasing pixel size. To address this issue, we hereby propose a “smart” pixel architecture where the aforementioned three components are combined in a single dual-gate photo thin-film transistor (TFT). In other words, the dual-gate photo TFT itself functions as a sensor, a storage capacitor, and a switch concurrently. Additionally, by harnessing the amplification effect of such a thin-film transistor, we for the first time created a single-transistor active pixel sensor. The proof-of-concept device had a W/L ratio of 250μm/20μm and was fabricated using a simple five-mask photolithography process, where a 130nm transparent ITO was used as the top photo gate, and a 200nm amorphous silicon as the absorbing channel layer. The preliminary results demonstrated that the photocurrent had been increased by four orders of magnitude due to light-induced threshold voltage shift in the sub-threshold region. The device sensitivity could be simply tuned by photo gate bias to specifically target low-level light detection. The dependence of threshold voltage on light illumination indicated that a dynamic range of at least 80dB could be achieved. The "smart" pixel technology holds tremendous promise for developing high-resolution and low-dose X-ray imaging and may potentially lower the cancer risk imposed by radiation, especially among paediatric patients.

The X-ray Integral Field Unit (X-IFU) for Athena

NASA Technical Reports Server (NTRS)

Ravera, Laurent; Barret, Didier; Willem den Herder, Jan; Piro, Luigi; Cledassou, Rodolphe; Pointecouteau, Etienne; Peille, Philippe; Pajot, Francois; Arnaud, Monique; Pigot, Claude;

CMOS sensors for atmospheric imaging

NASA Astrophysics Data System (ADS)

Pratlong, Jérôme; Burt, David; Jerram, Paul; Mayer, Frédéric; Walker, Andrew; Simpson, Robert; Johnson, Steven; Hubbard, Wendy

2017-09-01

Recent European atmospheric imaging missions have seen a move towards the use of CMOS sensors for the visible and NIR parts of the spectrum. These applications have particular challenges that are completely different to those that have driven the development of commercial sensors for applications such as cell-phone or SLR cameras. This paper will cover the design and performance of general-purpose image sensors that are to be used in the MTG (Meteosat Third Generation) and MetImage satellites and the technology challenges that they have presented. We will discuss how CMOS imagers have been designed with 4T pixel sizes of up to 250 μm square achieving good charge transfer efficiency, or low lag, with signal levels up to 2M electrons and with high line rates. In both devices a low noise analogue read-out chain is used with correlated double sampling to suppress the readout noise and give a maximum dynamic range that is significantly larger than in standard commercial devices. Radiation hardness is a particular challenge for CMOS detectors and both of these sensors have been designed to be fully radiation hard with high latch-up and single-event-upset tolerances, which is now silicon proven on MTG. We will also cover the impact of ionising radiation on these devices. Because with such large pixels the photodiodes have a large open area, front illumination technology is sufficient to meet the detection efficiency requirements but with thicker than standard epitaxial silicon to give improved IR response (note that this makes latch up protection even more important). However with narrow band illumination reflections from the front and back of the dielectric stack on the top of the sensor produce Fabry-Perot étalon effects, which have been minimised with process modifications. We will also cover the addition of precision narrow band filters inside the MTG package to provide a complete imaging subsystem. Control of reflected light is also critical in obtaining the required optical performance and this has driven the development of a black coating layer that can be applied between the active silicon regions.

A back-illuminated megapixel CMOS image sensor

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Cunningham, Thomas; Nikzad, Shouleh; Hoenk, Michael; Jones, Todd; Wrigley, Chris; Hancock, Bruce

2005-01-01

In this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.

Development of Position-sensitive Transition-edge Sensor X-ray Detectors

NASA Technical Reports Server (NTRS)

Smith, S. J.; Bandler, S. R.; Brekosky, R. P.; Brown, A.-D.; Chervenak, J. A.; Eckard, M. E.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Porter, F. s.;

Flight Qualified Micro Sun Sensor

NASA Technical Reports Server (NTRS)

Liebe, Carl Christian; Mobasser, Sohrab; Wrigley, Chris; Schroeder, Jeffrey; Bae, Youngsam; Naegle, James; Katanyoutanant, Sunant; Jerebets, Sergei; Schatzel, Donald; Lee, Choonsup

2007-01-01

A prototype small, lightweight micro Sun sensor (MSS) has been flight qualified as part of the attitude-determination system of a spacecraft or for Mars surface operations. The MSS has previously been reported at a very early stage of development in NASA Tech Briefs, Vol. 28, No. 1 (January 2004). An MSS is essentially a miniature multiple-pinhole electronic camera combined with digital processing electronics that functions analogously to a sundial. A micromachined mask containing a number of microscopic pinholes is mounted in front of an active-pixel sensor (APS). Electronic circuits for controlling the operation of the APS, readout from the pixel photodetectors, and analog-to-digital conversion are all integrated onto the same chip along with the APS. The digital processing includes computation of the centroids of the pinhole Sun images on the APS. The spacecraft computer has the task of converting the Sun centroids into Sun angles utilizing a calibration polynomial. The micromachined mask comprises a 500-micron-thick silicon wafer, onto which is deposited a 57-nm-thick chromium adhesion- promotion layer followed by a 200-nm-thick gold light-absorption layer. The pinholes, 50 microns in diameter, are formed in the gold layer by photolithography. The chromium layer is thin enough to be penetrable by an amount of Sunlight adequate to form measurable pinhole images. A spacer frame between the mask and the APS maintains a gap of .1 mm between the pinhole plane and the photodetector plane of the APS. To minimize data volume, mass, and power consumption, the digital processing of the APS readouts takes place in a single field-programmable gate array (FPGA). The particular FPGA is a radiation- tolerant unit that contains .32,000 gates. No external memory is used so the FPGA calculates the centroids in real time as pixels are read off the APS with minimal internal memory. To enable the MSS to fit into a small package, the APS, the FPGA, and other components are mounted on a single two-sided board following chip-on-board design practices

Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners.

PubMed

Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

2013-08-01

VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event's time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μ m mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μ W from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e - RMS at room temperature.

Design and characterization of the ePix10k: a high dynamic range integrating pixel ASIC for LCLS detectors

NASA Astrophysics Data System (ADS)

Caragiulo, P.; Dragone, A.; Markovic, B.; Herbst, R.; Nishimura, K.; Reese, B.; Herrmann, S.; Hart, P.; Blaj, G.; Segal, J.; Tomada, A.; Hasi, J.; Carini, G.; Kenney, C.; Haller, G.

2015-05-01

ePix10k is a variant of a novel class of integrating pixel ASICs architectures optimized for the processing of signals in second generation LINAC Coherent Light Source (LCLS) X-Ray cameras. The ASIC is optimized for high dynamic range application requiring high spatial resolution and fast frame rates. ePix ASICs are based on a common platform composed of a random access analog matrix of pixel with global shutter, fast parallel column readout, and dedicated sigma-delta analog to digital converters per column. The ePix10k variant has 100um×100um pixels arranged in a 176×192 matrix, a resolution of 140e- r.m.s. and a signal range of 3.5pC (10k photons at 8keV). In its final version it will be able to sustain a frame rate of 2kHz. A first prototype has been fabricated and characterized. Performance in terms of noise, linearity, uniformity, cross-talk, together with preliminary measurements with bump bonded sensors are reported here.

Study of a GaAs:Cr-based Timepix detector using synchrotron facility

NASA Astrophysics Data System (ADS)

Smolyanskiy, P.; Kozhevnikov, D.; Bakina, O.; Chelkov, G.; Dedovich, D.; Kuper, K.; Leyva Fabelo, A.; Zhemchugov, A.

2017-11-01

High resistivity gallium arsenide compensated by chromium fabricated by Tomsk State University has demonstrated a good suitability as a sensor material for hybrid pixel detectors used in X-ray imaging systems with photon energies up to 60 keV. The material is available with a thickness up to 1 mm and due to its Z number a high absorption efficiency in this energy region is provided. However, the performance of thick GaAs:Cr-based detectors in spectroscopic applications is limited by readout electronics with relatively small pixels due to the charge sharing effect. In this paper, we present the experimental investigation of the charge sharing effect contribution in the GaAs:Cr-based Timepix detector. By means of scanning the detector with a pencil photon beam generated by the synchrotron facility, the geometrical mapping of pixel sensitivity is obtained, as well as the energy resolution of a single pixel. The experimental results are supported by numerical simulations. The observed limitation of the GaAs:Cr-based Timepix detector for the high flux X-ray imaging is discussed.

The Belle-II Depfet Pixel Detector at the Superkekb Flavour Factory

NASA Astrophysics Data System (ADS)

Heindl, Stefan

2012-08-01

The ongoing upgrade of the asymmetric electron positron collider KEKB also requires extensive detector upgrades to cope with the new design luminosity of 8 · 1035 cm-2 · s-1 · Of critical importance is the new silicon pixel vertex tracker, which will significantly improve the decay vertex resolution, crucial for time dependent CP violation measurements. This new detector will consist of two layers of DEPFET pixel seii8ors very close to the interaction point. These sensors combine both particle detection and amplification of the signal by embedding a field effect transistor into a 75 μm thick fully depleted silicon substrate, providing very high signal to noise ratios and excellent spatial resolution. Using this technology satisfies the given requirements of extremely low material and high radiation tolerance at the new Belle II experiment. The power dissipation due to continuous readout at high rate and spatial constraints also give strict requirements for the mechanical support and cooling of the new detector. We will discuss the overall concept of the pixel vertex tracker, its expected performance and the challenging mechanical integration.

Column-parallel correlated multiple sampling circuits for CMOS image sensors and their noise reduction effects.

PubMed

Suh, Sungho; Itoh, Shinya; Aoyama, Satoshi; Kawahito, Shoji

2010-01-01

For low-noise complementary metal-oxide-semiconductor (CMOS) image sensors, the reduction of pixel source follower noises is becoming very important. Column-parallel high-gain readout circuits are useful for low-noise CMOS image sensors. This paper presents column-parallel high-gain signal readout circuits, correlated multiple sampling (CMS) circuits and their noise reduction effects. In the CMS, the gain of the noise cancelling is controlled by the number of samplings. It has a similar effect to that of an amplified CDS for the thermal noise but is a little more effective for 1/f and RTS noises. Two types of the CMS with simple integration and folding integration are proposed. In the folding integration, the output signal swing is suppressed by a negative feedback using a comparator and one-bit D-to-A converter. The CMS circuit using the folding integration technique allows to realize a very low-noise level while maintaining a wide dynamic range. The noise reduction effects of their circuits have been investigated with a noise analysis and an implementation of a 1Mpixel pinned photodiode CMOS image sensor. Using 16 samplings, dynamic range of 59.4 dB and noise level of 1.9 e(-) for the simple integration CMS and 75 dB and 2.2 e(-) for the folding integration CMS, respectively, are obtained.

Microwave SQUID Multiplexing of Metallic Magnetic Calorimeters: Status of Multiplexer Performance and Room-Temperature Readout Electronics Development

NASA Astrophysics Data System (ADS)

Wegner, M.; Karcher, N.; Krömer, O.; Richter, D.; Ahrens, F.; Sander, O.; Kempf, S.; Weber, M.; Enss, C.

2018-02-01

To our present best knowledge, microwave SQUID multiplexing (μ MUXing) is the most suitable technique for reading out large-scale low-temperature microcalorimeter arrays that consist of hundreds or thousands of individual pixels which require a large readout bandwidth per pixel. For this reason, the present readout strategy for metallic magnetic calorimeter (MMC) arrays combining an intrinsic fast signal rise time, an excellent energy resolution, a large energy dynamic range, a quantum efficiency close to 100% as well as a highly linear detector response is based on μ MUXing. Within this paper, we summarize the state of the art in MMC μ MUXing and discuss the most recent results. This particularly includes the discussion of the performance of a 64-pixel detector array with integrated, on-chip microwave SQUID multiplexer, the progress in flux ramp modulation of MMCs as well as the status of the development of a software-defined radio-based room-temperature electronics which is specifically optimized for MMC readout.

Readout electronics for LGAD sensors

NASA Astrophysics Data System (ADS)

Alonso, O.; Franch, N.; Canals, J.; Palacio, F.; López, M.; Vilà, A.; Diéguez, A.; Carulla, M.; Flores, D.; Hidalgo, S.; Merlos, A.; Pellegrini, G.; Quirion, D.

2017-02-01

In this paper, an ASIC fabricated in 180 nm CMOS technology from AMS with the very front-end electronics used to readout LGAD sensors is presented as well as its experimental results. The front-end has the typical architecture for Si-strip readout, i.e., preamplification stage with a Charge Sensitive Amplifier (CSA) followed by a CR-RC shaper. Both amplifiers are based on a folded cascode structure with a PMOS input transistor and the shaper only uses passive elements for the feedback stage. The CSA has programmable gain and a configurable input stage in order to adapt to the different input capacitance of the LGAD sensors (pixelated, short and long strips) and to the different input signal (depending on the gain of the LGAD). The fabricated prototype has an area of 0.865 mm × 0.965 mm and includes the biasing circuit for the CSA and the shaper, 4 analog channels (CSA+shaper) and programmable charge injection circuits included for testing purposes. Noise and power analysis performed during simulation fixed the size of the input transistor to W/L = 860 μm/0.2 μm. The shaping time is fixed by design at 1 us and, in this ASIC version, the feedback elements of the shaper are passive, which means that the area of the shaper can be reduced using active elements in future versions. Finally, the different gains of the CSA have been selected to maintain an ENC below 400 electrons for a detector capacitor of 20 pF, with a power consumption of 150 μ W per channel.

A radiation-tolerant electronic readout system for portal imaging

NASA Astrophysics Data System (ADS)

Östling, J.; Brahme, A.; Danielsson, M.; Iacobaeus, C.; Peskov, V.

2004-06-01

A new electronic portal imaging device, EPID, is under development at the Karolinska Institutet and the Royal Institute of Technology. Due to considerable demands on radiation tolerance in the radiotherapy environment, a dedicated electronic readout system has been designed. The most interesting aspect of the readout system is that it allows to read out ˜1000 pixels in parallel, with all electronics placed outside the radiation beam—making the detector more radiation resistant. In this work we are presenting the function of a small prototype (6×100 pixels) of the electronic readout board that has been tested. Tests were made with continuous X-rays (10-60 keV) and with α particles. The results show that, without using an optimised gas mixture and with an early prototype only, the electronic readout system still works very well.

Development of a Liquefied Noble Gas Time Projection Chamber

NASA Astrophysics Data System (ADS)

Lesser, Ezra; White, Aaron; Aidala, Christine

2015-10-01

Liquefied noble gas detectors have been used for various applications in recent years for detecting neutrinos, neutrons, photons, and potentially dark matter. The University of Michigan is developing a detector with liquid argon to produce scintillation light and ionization electrons. Our data collection method will allow high-resolution energy measurement and spatial reconstruction of detected particles by using multi-pixel silicon photomultipliers (SiPM) and a cylindrical time projection chamber (TPC) with a multi-wire endplate. We have already designed a liquid argon condenser and purification unit surrounded by an insulating vacuum, constructed circuitry for temperature and pressure sensors, and created software to obtain high-accuracy sensor readouts. The status of detector development will be presented. Funded through the Michigan Memorial Phoenix Project.

Verification of Dosimetry Measurements with Timepix Pixel Detectors for Space Applications

NASA Technical Reports Server (NTRS)

Kroupa, M.; Pinsky, L. S.; Idarraga-Munoz, J.; Hoang, S. M.; Semones, E.; Bahadori, A.; Stoffle, N.; Rios, R.; Vykydal, Z.; Jakubek, J.;

High-speed high-resolution epifluorescence imaging system using CCD sensor and digital storage for neurobiological research

NASA Astrophysics Data System (ADS)

Takashima, Ichiro; Kajiwara, Riichi; Murano, Kiyo; Iijima, Toshio; Morinaka, Yasuhiro; Komobuchi, Hiroyoshi

2001-04-01

We have designed and built a high-speed CCD imaging system for monitoring neural activity in an exposed animal cortex stained with a voltage-sensitive dye. Two types of custom-made CCD sensors were developed for this system. The type I chip has a resolution of 2664 (H) X 1200 (V) pixels and a wide imaging area of 28.1 X 13.8 mm, while the type II chip has 1776 X 1626 pixels and an active imaging area of 20.4 X 18.7 mm. The CCD arrays were constructed with multiple output amplifiers in order to accelerate the readout rate. The two chips were divided into either 24 (I) or 16 (II) distinct areas that were driven in parallel. The parallel CCD outputs were digitized by 12-bit A/D converters and then stored in the frame memory. The frame memory was constructed with synchronous DRAM modules, which provided a capacity of 128 MB per channel. On-chip and on-memory binning methods were incorporated into the system, e.g., this enabled us to capture 444 X 200 pixel-images for periods of 36 seconds at a rate of 500 frames/second. This system was successfully used to visualize neural activity in the cortices of rats, guinea pigs, and monkeys.

The E and B EXperiment: EBEX

NASA Astrophysics Data System (ADS)

Helson, Kyle R.

2015-08-01

We report on the status of the E and B Experiment (EBEX) a balloon-borne polarimeter designed to measure the polarization of the cosmic microwave background radiation. The instrument employs a 1.5 meter Gregorian Mizuguchi-Dragone telescope providing 8 arc-minute resolution at three bands centered on 150, 250, and 410 GHz. A continuously rotating achromatic half wave plate, mounted on a superconducting magnetic bearing, and a polarizing grid give EBEX polarimetric capabilities. Radiation is detected with a kilo-pixel array of transition edge sensor (TES) bolometers that are cooled to 0.25 K. The detectors are readout using SQUID current amplifiers and a digital frequency-domain multiplexing system in which 16 detectors are readout simultaneously with two wires. EBEX is the first instrument to implement TESs and such readout system on board a balloon-borne platform. EBEX was launched from the Antarctic in December 2012 on an 11-day long-duration balloon flight. This presentation will provide an overview of the instrument and discuss the flight and status of the data analysis. We also discuss the next generation of EBEX called EBEX10k, currently in development.

A low-power CMOS readout IC design for bolometer applications

NASA Astrophysics Data System (ADS)

Galioglu, Arman; Abbasi, Shahbaz; Shafique, Atia; Ceylan, Ömer; Yazici, Melik; Kaynak, Mehmet; Durmaz, Emre C.; Arsoy, Elif Gul; Gurbuz, Yasar

2017-02-01

A prototype of a readout IC (ROIC) designed for use in high temperature coefficient of resistance (TCR) SiGe microbolometers is presented. The prototype ROIC architecture implemented is based on a bridge with active and blind bolometer pixels with a capacitive transimpedance amplifier (CTIA) input stage and column parallel integration with serial readout. The ROIC is designed for use in high (>= 4 %/K) TCR and high detector resistance Si/SiGe microbolometers with 17x17 μm2 pixel sizes in development. The prototype has been designed and fabricated in 0.25- μm SiGe:C BiCMOS process.

Light-Addressable Potentiometric Sensors for Quantitative Spatial Imaging of Chemical Species.

PubMed

Yoshinobu, Tatsuo; Miyamoto, Ko-Ichiro; Werner, Carl Frederik; Poghossian, Arshak; Wagner, Torsten; Schöning, Michael J

2017-06-12

A light-addressable potentiometric sensor (LAPS) is a semiconductor-based chemical sensor, in which a measurement site on the sensing surface is defined by illumination. This light addressability can be applied to visualize the spatial distribution of pH or the concentration of a specific chemical species, with potential applications in the fields of chemistry, materials science, biology, and medicine. In this review, the features of this chemical imaging sensor technology are compared with those of other technologies. Instrumentation, principles of operation, and various measurement modes of chemical imaging sensor systems are described. The review discusses and summarizes state-of-the-art technologies, especially with regard to the spatial resolution and measurement speed; for example, a high spatial resolution in a submicron range and a readout speed in the range of several tens of thousands of pixels per second have been achieved with the LAPS. The possibility of combining this technology with microfluidic devices and other potential future developments are discussed.

A low-noise 15-μm pixel-pitch 640×512 hybrid InGaAs image sensor for night vision

NASA Astrophysics Data System (ADS)

Guellec, Fabrice; Dubois, Sébastien; de Borniol, Eric; Castelein, Pierre; Martin, Sébastien; Guiguet, Romain; Tchagaspanian, Micha"l.; Rouvié, Anne; Bois, Philippe

2012-03-01

Hybrid InGaAs focal plane arrays are very interesting for night vision because they can benefit from the nightglow emission in the Short Wave Infrared band. Through a collaboration between III-V Lab and CEA-Léti, a 640x512 InGaAs image sensor with 15μm pixel pitch has been developed. The good crystalline quality of the InGaAs detectors opens the door to low dark current (around 20nA/cm2 at room temperature and -0.1V bias) as required for low light level imaging. In addition, the InP substrate can be removed to extend the detection range towards the visible spectrum. A custom readout IC (ROIC) has been designed in a standard CMOS 0.18μm technology. The pixel circuit is based on a capacitive transimpedance amplifier (CTIA) with two selectable charge-to-voltage conversion gains. Relying on a thorough noise analysis, this input stage has been optimized to deliver low-noise performance in high-gain mode with a reasonable concession on dynamic range. The exposure time can be maximized up to the frame period thanks to a rolling shutter approach. The frame rate can be up to 120fps or 60fps if the Correlated Double Sampling (CDS) capability of the circuit is enabled. The first results show that the CDS is effective at removing the very low frequency noise present on the reference voltage in our test setup. In this way, the measured total dark noise is around 90 electrons in high-gain mode for 8.3ms exposure time. It is mainly dominated by the dark shot noise for a detector temperature settling around 30°C when not cooled. The readout noise measured with shorter exposure time is around 30 electrons for a dynamic range of 71dB in high-gain mode and 108 electrons for 79dB in low-gain mode.

Film cameras or digital sensors? The challenge ahead for aerial imaging

USGS Publications Warehouse

Light, D.L.

1996-01-01

Cartographic aerial cameras continue to play the key role in producing quality products for the aerial photography business, and specifically for the National Aerial Photography Program (NAPP). One NAPP photograph taken with cameras capable of 39 lp/mm system resolution can contain the equivalent of 432 million pixels at 11 ??m spot size, and the cost is less than $75 per photograph to scan and output the pixels on a magnetic storage medium. On the digital side, solid state charge coupled device linear and area arrays can yield quality resolution (7 to 12 ??m detector size) and a broader dynamic range. If linear arrays are to compete with film cameras, they will require precise attitude and positioning of the aircraft so that the lines of pixels can be unscrambled and put into a suitable homogeneous scene that is acceptable to an interpreter. Area arrays need to be much larger than currently available to image scenes competitive in size with film cameras. Analysis of the relative advantages and disadvantages of the two systems show that the analog approach is more economical at present. However, as arrays become larger, attitude sensors become more refined, global positioning system coordinate readouts become commonplace, and storage capacity becomes more affordable, the digital camera may emerge as the imaging system for the future. Several technical challenges must be overcome if digital sensors are to advance to where they can support mapping, charting, and geographic information system applications.

The charge pump PLL clock generator designed for the 1.56 ns bin size time-to-digital converter pixel array of the Timepix3 readout ASIC

NASA Astrophysics Data System (ADS)

Fu, Y.; Brezina, C.; Desch, K.; Poikela, T.; Llopart, X.; Campbell, M.; Massimiliano, D.; Gromov, V.; Kluit, R.; van Beauzekom, M.; Zappon, F.; Zivkovic, V.

2014-01-01

Timepix3 is a newly developed pixel readout chip which is expected to be operated in a wide range of gaseous and silicon detectors. It is made of 256 × 256 pixels organized in a square pixel-array with 55 μm pitch. Oscillators running at 640 MHz are distributed across the pixel-array and allow for a highly accurate measurement of the arrival time of a hit. This paper concentrates on a low-jitter phase locked loop (PLL) that is located in the chip periphery. This PLL provides a control voltage which regulates the actual frequency of the individual oscillators, allowing for compensation of process, voltage, and temperature variations.

Proton irradiation of the CIS115 for the JUICE mission

NASA Astrophysics Data System (ADS)

Soman, M. R.; Allanwood, E. A. H.; Holland, A. D.; Winstone, G. P.; Gow, J. P. D.; Stefanov, K.; Leese, M.

2015-09-01

The CIS115 is one of the latest CMOS Imaging Sensors designed by e2v technologies, with 1504x2000 pixels on a 7 μm pitch. Each pixel in the array is a pinned photodiode with a 4T architecture, achieving an average dark current of 22 electrons pixel-1 s-1 at 21°C measured in a front-faced device. The sensor aims for high optical sensitivity by utilising e2v's back-thinning and processing capabilities, providing a sensitive silicon thickness approximately 9 μm to 12 μm thick with a tuned anti-reflective coating. The sensor operates in a rolling shutter mode incorporating reset level subtraction resulting in a mean pixel readout noise of 4.25 electrons rms. The full well has been measured to be 34000 electrons in a previous study, resulting in a dynamic range of up to 8000. These performance characteristics have led to the CIS115 being chosen for JANUS, the high-resolution and wide-angle optical camera on the JUpiter ICy moon Explorer (JUICE). The three year science phase of JUICE is in the harsh radiation environment of the Jovian magnetosphere, primarily studying Jupiter and its icy moons. Analysis of the expected radiation environment and shielding levels from the spacecraft and instrument design predict the End Of Life (EOL) displacement and ionising damage for the CIS115 to be equivalent to 1010 10 MeV protons cm-2 and 100 krad(Si) respectively. Dark current and image lag characterisation results following initial proton irradiations are presented, detailing the initial phase of space qualification of the CIS115. Results are compared to the pre-irradiation performance and the instrument specifications and further qualification plans are outlined.

Thermal Design and Characterization of Transition-Edge Sensor (TES) Bolometers for Frequency-Domain Multiplexing

NASA Astrophysics Data System (ADS)

Lueker, Martin; Benson, Bradford A.; Chang, Clarence L.; Cho, Hsiao-Mei; Dobbs, Matt; Holzapfel, William L.; Lanting, Trevor; Lee, Adrian T.; Mehl, Jared; Plagge, Thomas; Shirokoff, Erik; Spieler, Helmuth G.; Vieira, Joaquin D.

2009-06-01

In contemporary cosmic microwave background experiments, bolometric detectors are often background limited, and in this case the sensitivity of instruments can only be improved by increasing the number of background-limited detectors, and so contemporary TES receivers contain as many pixels as possible. Frequency-domain multiplexing (fMUX) is one strategy for reading out many detectors with one SQUID. For any readout system, it is important to carefully evaluate the thermal design of detector, in conjunction with the readout bandwidth, in order to ensure stable electro-thermal feedback (ETF). We demonstrate a novel technique for characterizing the thermal circuit of our detectors, using am AC-bias and the fMUX electronics. This technique is used to study the internal thermal coupling of a TES bolometer. We illustrate how the insights gathered by this technique have been instrumental in improving the stability of our multiplexed detectors for the south pole telescope (SPT).

New readout integrated circuit using continuous time fixed pattern noise correction

NASA Astrophysics Data System (ADS)

Dupont, Bertrand; Chammings, G.; Rapellin, G.; Mandier, C.; Tchagaspanian, M.; Dupont, Benoit; Peizerat, A.; Yon, J. J.

2008-04-01

LETI has been involved in IRFPA development since 1978; the design department (LETI/DCIS) has focused its work on new ROIC architecture since many years. The trend is to integrate advanced functions into the CMOS design to achieve cost efficient sensors production. Thermal imaging market is today more and more demanding of systems with instant ON capability and low power consumption. The purpose of this paper is to present the latest developments of fixed pattern noise continuous time correction. Several architectures are proposed, some are based on hardwired digital processing and some are purely analog. Both are using scene based algorithms. Moreover a new method is proposed for simultaneous correction of pixel offsets and sensitivities. In this scope, a new architecture of readout integrated circuit has been implemented; this architecture is developed with 0.18μm CMOS technology. The specification and the application of the ROIC are discussed in details.

Theoretical Noise Analysis on a Position-sensitive Metallic Magnetic Calorimeter

NASA Technical Reports Server (NTRS)

Smith, Stephen J.

2007-01-01

We report on the theoretical noise analysis for a position-sensitive Metallic Magnetic Calorimeter (MMC), consisting of MMC read-out at both ends of a large X-ray absorber. Such devices are under consideration as alternatives to other cryogenic technologies for future X-ray astronomy missions. We use a finite-element model (FEM) to numerically calculate the signal and noise response at the detector outputs and investigate the correlations between the noise measured at each MMC coupled by the absorber. We then calculate, using the optimal filter concept, the theoretical energy and position resolution across the detector and discuss the trade-offs involved in optimizing the detector design for energy resolution, position resolution and count rate. The results show, theoretically, the position-sensitive MMC concept offers impressive spectral and spatial resolving capabilities compared to pixel arrays and similar position-sensitive cryogenic technologies using Transition Edge Sensor (TES) read-out.

Application of low-noise CID imagers in scientific instrumentation cameras

NASA Astrophysics Data System (ADS)

Carbone, Joseph; Hutton, J.; Arnold, Frank S.; Zarnowski, Jeffrey J.; Vangorden, Steven; Pilon, Michael J.; Wadsworth, Mark V.

1991-07-01

CIDTEC has developed a PC-based instrumentation camera incorporating a preamplifier per row CID imager and a microprocessor/LCA camera controller. The camera takes advantage of CID X-Y addressability to randomly read individual pixels and potentially overlapping pixel subsets in true nondestructive (NDRO) as well as destructive readout modes. Using an oxy- nitride fabricated CID and the NDRO readout technique, pixel full well and noise levels of approximately 1*10(superscript 6) and 40 electrons, respectively, were measured. Data taken from test structures indicates noise levels (which appear to be 1/f limited) can be reduced by a factor of two by eliminating the nitride under the preamplifier gate. Due to software programmability, versatile readout capabilities, wide dynamic range, and extended UV/IR capability, this camera appears to be ideally suited for use in spectroscopy and other scientific applications.

Reducing the Read Noise of HAWAII-2RG Detector Systems with Improved Reference Sampling and Subtraction (IRS2)

NASA Technical Reports Server (NTRS)

Rauscher, Bernard J.; Arendt, Richard G.; Fixsen, D. J.; Lander, Matthew; Lindler, Don; Loose, Markus; Moseley, S. H.; Wilson, Donna V.; Xenophontos, Christos

2012-01-01

IRS2 is a Wiener-optimal approach to using all of the reference information that Teledyne's HAWAII-2RG detector arrays provide. Using a new readout pattern, IRS2 regularly interleaves reference pixels with the normal pixels during readout. This differs from conventional clocking, in which the reference pixels are read out infrequently, and only in a few rows and columns around the outside edges of the detector array. During calibration, the data are processed in Fourier space, which is <;:lose to the noise's eigenspace. Using IRS2, we have reduced the read noise of the James Webb Space Telescope Near Infrared Spectrograph by 15% compared to conventional readout. We are attempting to achieve further gains by calibrating out recently recognized non-stationary noise that appears at the frame rate.

Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method.

PubMed

Chao, Calvin Yi-Ping; Tu, Honyih; Wu, Thomas Meng-Hsiu; Chou, Kuo-Yu; Yeh, Shang-Fu; Yin, Chin; Lee, Chih-Lin

2017-11-23

A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in this paper. A noise decomposition scheme is used to pinpoint the noise source. The long tail of the random noise (RN) distribution is directly linked to the RTN from the pixel source follower (SF). The full 8.3 Mpixels are classified into four categories according to the observed RTN histogram peaks. A theoretical formula describing the RTN as a function of the time difference between the two phases of the correlated double sampling (CDS) is derived and validated by measured data. An on-chip time constant extraction method is developed and applied to the RTN analysis. The effects of readout circuit bandwidth on the settling ratios of the RTN histograms are investigated and successfully accounted for in a simulation using a RTN behavior model.

MOCCA: A 4k-Pixel Molecule Camera for the Position- and Energy-Resolving Detection of Neutral Molecule Fragments at CSR

NASA Astrophysics Data System (ADS)

Gamer, L.; Schulz, D.; Enss, C.; Fleischmann, A.; Gastaldo, L.; Kempf, S.; Krantz, C.; Novotný, O.; Schwalm, D.; Wolf, A.

2016-08-01

We present the design of MOCCA, a large-area particle detector that is developed for the position- and energy-resolving detection of neutral molecule fragments produced in electron-ion interactions at the Cryogenic Storage Ring at the Max Planck Institute for Nuclear Physics in Heidelberg. The detector is based on metallic magnetic calorimeters and consists of 4096 particle absorbers covering a total detection area of 44.8 mathrm {mm} × 44.8 mathrm {mm}. Groups of four absorbers are thermally coupled to a common paramagnetic temperature sensor where the strength of the thermal link is different for each absorber. This allows attributing a detector event within this group to the corresponding absorber by discriminating the signal rise times. A novel readout scheme further allows reading out all 1024 temperature sensors that are arranged in a 32 × 32 square array using only 16+16 current-sensing superconducting quantum interference devices. Numerical calculations taking into account a simplified detector model predict an energy resolution of Δ E_mathrm {FWHM} le 80 mathrm {eV} for all pixels of this detector.

Accounting for Dark Current Accumulated during Readout of Hubble's ACS/WFC Detectors

NASA Astrophysics Data System (ADS)

Ryon, Jenna E.; Grogin, Norman A.; Coe, Dan A.; ACS Team

2018-06-01

We investigate the properties of excess dark current accumulated during the 100-second full-frame readout of the Advanced Camera for Surveys (ACS) Wide Field Channel (WFC) detectors. This excess dark current, called "readout dark", gives rise to ambient background gradients and hot columns in each ACS/WFC image. While readout dark signal is removed from science images during the bias correction step in CALACS, the additional noise from the readout dark is currently not taken into account. We develop a method to estimate the readout dark noise properties in ACS/WFC observations. We update the error (ERR) extensions of superbias images to include the appropriate noise from the ambient readout dark gradient and stable hot columns. In recent data, this amounts to about 5 e-/pixel added variance in the rows farthest from the WFC serial registers, and about 7 to 30 e-/pixel added variance along the stable hot columns. We also flag unstable hot columns in the superbias data quality (DQ) extensions. The new reference file pipeline for ACS/WFC implements these updates to our superbias creation process.

The wide field imager instrument for Athena

NASA Astrophysics Data System (ADS)

Meidinger, Norbert; Nandra, Kirpal; Plattner, Markus; Porro, Matteo; Rau, Arne; Santangelo, Andrea E.; Tenzer, Chris; Wilms, Jörn

2014-07-01

The "Hot and Energetic Universe" has been selected as the science theme for ESA's L2 mission, scheduled for launch in 2028. The proposed Athena X-ray observatory provides the necessary capabilities to achieve the ambitious goals of the science theme. The X-ray mirrors are based on silicon pore optics technology and will have a 12 m focal length. Two complementary camera systems are foreseen which can be moved in and out of the focal plane by an interchange mechanism. These instruments are the actively shielded micro-calorimeter spectrometer X-IFU and the Wide Field Imager (WFI). The WFI will combine an unprecedented survey power through its large field of view of 40 arcmin with a high countrate capability (approx. 1 Crab). It permits a state-of-the-art energy resolution in the energy band of 0.1 keV to 15 keV during the entire mission lifetime (e.g. FWHM <= 150 eV at 6 keV). This performance is accomplished by a set of DEPFET active pixel sensor matrices with a pixel size matching the angular resolution of 5 arcsec (on-axis) of the mirror system. Each DEPFET pixel is a combined detector-amplifier structure with a MOSFET integrated onto a fully depleted 450 micron thick silicon bulk. The signal electrons generated by an X-ray photon are collected in a so-called internal gate below the transistor channel. The resulting change of the conductivity of the transistor channel is proportional to the number of electrons and thus a measure for the photon energy. DEPFETs have already been developed for the "Mercury Imaging X-ray Spectrometer" on-board of ESA's BepiColombo mission. For Athena we develop enhanced sensors with integrated electronic shutter and an additional analog storage area in each pixel. These features improve the peak-to-background ratio of the spectra and minimize dead time. The sensor will be read out with a new, fast, low-noise multi-channel analog signal processor with integrated sequencer and serial analog output. The architecture of sensor and readout ASIC allows readout in full frame mode and window mode as well by addressing selectively arbitrary sub-areas of the sensor allowing time resolution in the order of 10 μs. The further detector electronics has mainly the following tasks: digitization, pre-processing and telemetry of event data as well as supply and control of the detector system. Although the sensor will already be equipped with an on-chip light blocking filter, a filter wheel is necessary to provide an additional external filter, an on-board calibration source, an open position for outgassing, and a closed position for protection of the sensor. The sensor concept provides high quantum efficiency over the entire energy band and we intend to keep the instrumental background as low as possible by designing a graded Z-shield around the sensor. All these properties make the WFI a very powerful survey instrument, significantly surpassing currently existing observatories and in addition allow high-time resolution of the brightest X-ray sources with low pile-up and high efficiency. This manuscript will summarize the current instrument concept and design, the status of the technology development, and the envisaged baseline performance.

Achieving subpixel resolution with time-correlated transient signals in pixelated CdZnTe gamma-ray sensors using a focused laser beam (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ocampo Giraldo, Luis A.; Bolotnikov, Aleksey E.; Camarda, Giuseppe S.; Cui, Yonggang; De Geronimo, Gianluigi; Gul, Rubi; Fried, Jack; Hossain, Anwar; Unlu, Kenan; Vernon, Emerson; Yang, Ge; James, Ralph B.

2017-05-01

High-resolution position-sensitive detectors have been proposed to correct response non-uniformities in Cadmium Zinc Telluride (CZT) crystals by virtually subdividing the detectors area into small voxels and equalizing responses from each voxel. 3D pixelated detectors coupled with multichannel readout electronics are the most advanced type of CZT devices offering many options in signal processing and enhancing detector performance. One recent innovation proposed for pixelated detectors is to use the induced (transient) signals from neighboring pixels to achieve high sub-pixel position resolution while keeping large pixel sizes. The main hurdle in achieving this goal is the relatively low signal induced on the neighboring pixels because of the electrostatic shielding effect caused by the collecting pixel. In addition, to achieve high position sensitivity one should rely on time-correlated transient signals, which means that digitized output signals must be used. We present the results of our studies to measure the amplitude of the pixel signals so that these can be used to measure positions of the interaction points. This is done with the processing of digitized correlated time signals measured from several adjacent pixels taking into account rise-time and charge-sharing effects. In these measurements we used a focused pulsed laser to generate a 10-micron beam at one milliwatt (650-nm wavelength) over the detector surface while the collecting pixel was moved in cardinal directions. The results include measurements that present the benefits of combining conventional pixel geometry with digital pulse processing for the best approach in achieving sub-pixel position resolution with the pixel dimensions of approximately 2 mm. We also present the sub-pixel resolution measurements at comparable energies from various gamma emitting isotopes.

Simulation and Measurement of Absorbed Dose from 137 Cs Gammas Using a Si Timepix Detector

NASA Technical Reports Server (NTRS)

Stoffle, Nicholas; Pinsky, Lawrence; Empl, Anton; Semones, Edward

2011-01-01

The TimePix readout chip is a hybrid pixel detector with over 65k independent pixel elements. Each pixel contains its own circuitry for charge collection, counting logic, and readout. When coupled with a Silicon detector layer, the Timepix chip is capable of measuring the charge, and thus energy, deposited in the Silicon. Measurements using a NIST traceable 137Cs gamma source have been made at Johnson Space Center using such a Si Timepix detector, and this data is compared to simulations of energy deposition in the Si layer carried out using FLUKA.

Demonstration of Time Domain Multiplexed Readout for Magnetically Coupled Calorimeters

NASA Technical Reports Server (NTRS)

Porst, J.-P.; Adams, J. S.; Balvin, M.; Bandler, S.; Beyer, J.; Busch, S. E.; Drung, D.; Seidel, G. M.; Smith, S. J.; Stevenson, T. R.

2012-01-01

Magnetically coupled calorimeters (MCC) have extremely high potential for x-ray applications due to the inherent high energy resolution capability and being non-dissipative. Although very high energy-resolution has been demonstrated, until now there has been no demonstration of multiplexed read-out. We report on the first realization of a time domain multiplexed (TDM) read-out. While this has many similarities with TDM of transition-edge-sensors (TES), for MGGs the energy resolution is limited by the SQUID read-out noise and requires the well established scheme to be altered in order to minimize degradation due to noise aliasing effects. In cur approach, each pixel is read out by a single first stage SQUID (SQ1) that is operated in open loop. The outputs of the SQ1 s are low-pass filtered with an array of low cross-talk inductors, then fed into a single-stage SQUID TD multiplexer. The multiplexer is addressed from room temperature and read out through a single amplifier channel. We present results achieved with a new detector platform. Noise performance is presented and compared to expectations. We have demonstrated multiplexed X-ray spectroscopy at 5.9keV with delta_FWHM=10eV. In an optimized setup, we show it is possible to multiplex 32 detectors without significantly degrading the Intrinsic detector resolution.

MKID digital readout tuning with deep learning

NASA Astrophysics Data System (ADS)

Dodkins, R.; Mahashabde, S.; O'Brien, K.; Thatte, N.; Fruitwala, N.; Walter, A. B.; Meeker, S. R.; Szypryt, P.; Mazin, B. A.

2018-04-01

Microwave Kinetic Inductance Detector (MKID) devices offer inherent spectral resolution, simultaneous read out of thousands of pixels, and photon-limited sensitivity at optical wavelengths. Before taking observations the readout power and frequency of each pixel must be individually tuned, and if the equilibrium state of the pixels change, then the readout must be retuned. This process has previously been performed through manual inspection, and typically takes one hour per 500 resonators (20 h for a ten-kilo-pixel array). We present an algorithm based on a deep convolution neural network (CNN) architecture to determine the optimal bias power for each resonator. The bias point classifications from this CNN model, and those from alternative automated methods, are compared to those from human decisions, and the accuracy of each method is assessed. On a test feed-line dataset, the CNN achieves an accuracy of 90% within 1 dB of the designated optimal value, which is equivalent accuracy to a randomly selected human operator, and superior to the highest scoring alternative automated method by 10%. On a full ten-kilopixel array, the CNN performs the characterization in a matter of minutes - paving the way for future mega-pixel MKID arrays.

Small, Fast TES Microcalorimeters with Unprecedented X-ray Spectral Performance

NASA Technical Reports Server (NTRS)

Eckart, M. E.; Adams, J. S.; Bailey, C. N.; Bandler, S. R.; Chervenak, J. A.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Porter, F. S.; Sadleir, J. E.;

Multiscale multichroic focal planes for measurements of the cosmic microwave background

NASA Astrophysics Data System (ADS)

Cukierman, Ari; Lee, Adrian T.; Raum, Christopher; Suzuki, Aritoki; Westbrook, Benjamin

2018-01-01

We report on the development of multiscale multichroic focal planes for measurements of the cosmic microwave background (CMB). A multichroic focal plane, i.e., one that consists of pixels that are simultaneously sensitive in multiple frequency bands, is an efficient architecture for increasing the sensitivity of an experiment as well as for disentangling the contamination due to galactic foregrounds, which is increasingly becoming the limiting factor in extracting cosmological information from CMB measurements. To achieve these goals, it is necessary to observe across a broad frequency range spanning roughly 30-350 GHz. For this purpose, the Berkeley CMB group has been developing multichroic pixels consisting of planar superconducting sinuous antennas coupled to extended hemispherical lenslets, which operate at sub-Kelvin temperatures. The sinuous antennas, microwave circuitry and the transition-edge-sensor (TES) bolometers to which they are coupled are integrated in a single lithographed wafer.We describe the design, fabrication, testing and performance of multichroic pixels with bandwidths of 3:1 and 4:1 across the entire frequency range of interest. Additionally, we report on a demonstration of multiscale pixels, i.e., pixels whose effective size changes as a function of frequency. This property keeps the beam width approximately constant across all frequencies, which in turn allows the sensitivity of the experiment to be optimal in every frequency band. We achieve this by creating phased arrays from neighboring lenslet-coupled sinuous antennas, where the size of each phased array is chosen independently for each frequency band. We describe the microwave circuitry in detail as well as the benefits of a multiscale architecture, e.g., mitigation of beam non-idealities, reduced readout requirements, etc. Finally, we discuss the design and fabrication of the detector modules and focal-plane structures including cryogenic readout components, which enable the integration of our devices in current and future CMB experiments.

Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

NASA Astrophysics Data System (ADS)

Fadeyev, V.; Galloway, Z.; Grabas, H.; Grillo, A. A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J.; Affolder, A.; Buckland, M.; Meng, L.; Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I.; Vigani, L.; Bates, R.; Blue, A.; Buttar, C.; Kanisauskas, K.; Maneuski, D.; Benoit, M.; Di Bello, F.; Caragiulo, P.; Dragone, A.; Grenier, P.; Kenney, C.; Rubbo, F.; Segal, J.; Su, D.; Tamma, C.; Das, D.; Dopke, J.; Turchetta, R.; Wilson, F.; Worm, S.; Ehrler, F.; Peric, I.; Gregor, I. M.; Stanitzki, M.; Hoeferkamp, M.; Seidel, S.; Hommels, L. B. A.; Kramberger, G.; Mandić, I.; Mikuž, M.; Muenstermann, D.; Wang, R.; Zhang, J.; Warren, M.; Song, W.; Xiu, Q.; Zhu, H.

2016-09-01

ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

A Pixel Readout Chip in 40 nm CMOS Process for High Count Rate Imaging Systems with Minimization of Charge Sharing Effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maj, Piotr; Grybos, P.; Szczgiel, R.

2013-11-07

We present a prototype chip in 40 nm CMOS technology for readout of hybrid pixel detector. The prototype chip has a matrix of 18x24 pixels with a pixel pitch of 100 μm. It can operate both in single photon counting (SPC) mode and in C8P1 mode. In SPC the measured ENC is 84 e ₋rms (for the peaking time of 48 ns), while the effective offset spread is below 2 mV rms. In the C8P1 mode the chip reconstructs full charge deposited in the detector, even in the case of charge sharing, and it identifies a pixel with the largestmore » charge deposition. The chip architecture and preliminary measurements are reported.« less

A pixel read-out architecture implementing a two-stage token ring, zero suppression and compression

NASA Astrophysics Data System (ADS)

Heuvelmans, S.; Boerrigter, M.

2011-01-01

Increasing luminosity in high energy physics experiments leads to new challenges in the design of data acquisition systems for pixel detectors. With the upgrade of the LHCb experiment, the data processing will be changed; hit data from every collision will be transported off the pixel chip, without any trigger selection. A read-out architecture is proposed which is able to obtain low hit data loss on limited silicon area by using the logic beneath the pixels as a data buffer. Zero suppression and redundancy reduction ensure that the data rate off chip is minimized. A C++ model has been created for simulation of functionality and data loss, and for system development. A VHDL implementation has been derived from this model.

Prototype AEGIS: A Pixel-Array Readout Circuit for Gamma-Ray Imaging.

PubMed

Barber, H Bradford; Augustine, F L; Furenlid, L; Ingram, C M; Grim, G P

2005-07-31

Semiconductor detector arrays made of CdTe/CdZnTe are expected to be the main components of future high-performance, clinical nuclear medicine imaging systems. Such systems will require small pixel-pitch and much larger numbers of pixels than are available in current semiconductor-detector cameras. We describe the motivation for developing a new readout integrated circuit, AEGIS, for use in hybrid semiconductor detector arrays, that may help spur the development of future cameras. A basic design for AEGIS is presented together with results of an HSPICE ™ simulation of the performance of its unit cell. AEGIS will have a shaper-amplifier unit cell and neighbor pixel readout. Other features include the use of a single input power line with other biases generated on-board, a control register that allows digital control of all thresholds and chip configurations and an output approach that is compatible with list-mode data acquisition. An 8×8 prototype version of AEGIS is currently under development; the full AEGIS will be a 64×64 array with 300 μm pitch.

CCD imaging sensors

NASA Technical Reports Server (NTRS)

Janesick, James R. (Inventor); Elliott, Stythe T. (Inventor)

1989-01-01

A method for promoting quantum efficiency (QE) of a CCD imaging sensor for UV, far UV and low energy x-ray wavelengths by overthinning the back side beyond the interface between the substrate and the photosensitive semiconductor material, and flooding the back side with UV prior to using the sensor for imaging. This UV flooding promotes an accumulation layer of positive states in the oxide film over the thinned sensor to greatly increase QE for either frontside or backside illumination. A permanent or semipermanent image (analog information) may be stored in a frontside SiO.sub.2 layer over the photosensitive semiconductor material using implanted ions for a permanent storage and intense photon radiation for a semipermanent storage. To read out this stored information, the gate potential of the CCD is biased more negative than that used for normal imaging, and excess charge current thus produced through the oxide is integrated in the pixel wells for subsequent readout by charge transfer from well to well in the usual manner.

Direct Detection Electron Energy-Loss Spectroscopy: A Method to Push the Limits of Resolution and Sensitivity.

PubMed

Hart, James L; Lang, Andrew C; Leff, Asher C; Longo, Paolo; Trevor, Colin; Twesten, Ray D; Taheri, Mitra L

2017-08-15

In many cases, electron counting with direct detection sensors offers improved resolution, lower noise, and higher pixel density compared to conventional, indirect detection sensors for electron microscopy applications. Direct detection technology has previously been utilized, with great success, for imaging and diffraction, but potential advantages for spectroscopy remain unexplored. Here we compare the performance of a direct detection sensor operated in counting mode and an indirect detection sensor (scintillator/fiber-optic/CCD) for electron energy-loss spectroscopy. Clear improvements in measured detective quantum efficiency and combined energy resolution/energy field-of-view are offered by counting mode direct detection, showing promise for efficient spectrum imaging, low-dose mapping of beam-sensitive specimens, trace element analysis, and time-resolved spectroscopy. Despite the limited counting rate imposed by the readout electronics, we show that both core-loss and low-loss spectral acquisition are practical. These developments will benefit biologists, chemists, physicists, and materials scientists alike.

The Microwave SQUID Multiplexer

NASA Astrophysics Data System (ADS)

Mates, John Arthur Benson

2011-12-01

This thesis describes a multiplexer of Superconducting Quantum Interference Devices (SQUIDs) with low-noise, ultra-low power dissipation, and great scalability. The multiplexer circuit measures the magnetic flux in a large number of unshunted rf SQUIDs by coupling each SQUID to a superconducting microwave resonator tuned to a unique resonance frequency and driving the resonators from a common feedline. A superposition of microwave tones measures each SQUID simultaneously using only two coaxial cables between the cryogenic device and room temperature. This multiplexer will enable the instrumentation of arrays with hundreds of thousands of low-temperature detectors for new applications in cosmology, materials analysis, and nuclear non-proliferation. The driving application of the Microwave SQUID Multiplexer is the readout of large arrays of superconducting transition-edge sensors, by some figures of merit the most sensitive detectors of electromagnetic signals over a span of more than nine orders of magnitude in energy, from 40 GHz microwaves to 200 keV gamma rays. Modern transition-edge sensors have noise-equivalent power as low as 10-20 W / Hz1/2 and energy resolution as good as 2 eV at 6 keV. These per-pixel sensitivities approach theoretical limits set by the underlying signals, motivating a rapid increase in pixel count to access new science. Compelling applications, like the non-destructive assay of nuclear material for treaty verification or the search for primordial gravity waves from inflation use arrays of these detectors to increase collection area or tile a focal plane. We developed three generations of SQUID multiplexers, optimizing the first for flux noise 0.17 muPhi0 / Hz1/2, the second for input current noise 19 pA / Hz1/2, and the last for practical multiplexing of large arrays of cosmic microwave background polarimeters based on transition-edge sensors. Using the last design we demonstrated multiplexed readout of prototype polarimeters with the performance required for the future development of a large-scale astronomical instrument.

Array-scale performance of TES X-ray Calorimeters Suitable for Constellation-X

NASA Technical Reports Server (NTRS)

Kilbourne, C. A.; Bandler, S. R.; Brown, A. D.; Chervenak, J. A.; Eckart, M. E.; Finkbeiner, F. M.; Iyomoto, N.; Kelley, R. L.; Porter, F. S.; Smith, S. J.;

Submillisecond X-ray photon correlation spectroscopy from a pixel array detector with fast dual gating and no readout dead-time

DOE PAGES

Zhang, Qingteng; Dufresne, Eric M.; Grybos, Pawel; ...

2016-04-19

Small-angle scattering X-ray photon correlation spectroscopy (XPCS) studies were performed using a novel photon-counting pixel array detector with dual counters for each pixel. Each counter can be read out independently from the other to ensure there is no readout dead-time between the neighboring frames. A maximum frame rate of 11.8 kHz was achieved. Results on test samples show good agreement with simple diffusion. Lastly, the potential of extending the time resolution of XPCS beyond the limit set by the detector frame rate using dual counters is also discussed.

Submillisecond X-ray photon correlation spectroscopy from a pixel array detector with fast dual gating and no readout dead-time

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Qingteng; Dufresne, Eric M.; Grybos, Pawel

Small-angle scattering X-ray photon correlation spectroscopy (XPCS) studies were performed using a novel photon-counting pixel array detector with dual counters for each pixel. Each counter can be read out independently from the other to ensure there is no readout dead-time between the neighboring frames. A maximum frame rate of 11.8 kHz was achieved. Results on test samples show good agreement with simple diffusion. Lastly, the potential of extending the time resolution of XPCS beyond the limit set by the detector frame rate using dual counters is also discussed.

Submillisecond X-ray photon correlation spectroscopy from a pixel array detector with fast dual gating and no readout dead-time.

PubMed

Zhang, Qingteng; Dufresne, Eric M; Grybos, Pawel; Kmon, Piotr; Maj, Piotr; Narayanan, Suresh; Deptuch, Grzegorz W; Szczygiel, Robert; Sandy, Alec

2016-05-01

Small-angle scattering X-ray photon correlation spectroscopy (XPCS) studies were performed using a novel photon-counting pixel array detector with dual counters for each pixel. Each counter can be read out independently from the other to ensure there is no readout dead-time between the neighboring frames. A maximum frame rate of 11.8 kHz was achieved. Results on test samples show good agreement with simple diffusion. The potential of extending the time resolution of XPCS beyond the limit set by the detector frame rate using dual counters is also discussed.

Circuit models applied to the design of a novel uncooled infrared focal plane array structure

NASA Astrophysics Data System (ADS)

Shi, Shali; Chen, Dapeng; Li, Chaobo; Jiao, Binbin; Ou, Yi; Jing, Yupeng; Ye, Tianchun; Guo, Zheying; Zhang, Qingchuan; Wu, Xiaoping

2007-05-01

This paper describes a circuit model applied to the simulation of the thermal response frequency of a novel substrate-free single-layer bi-material cantilever microstructure used as the focal plane array (FPA) in an uncooled opto-mechanical infrared imaging system. In order to obtain a high detection of the IR object, gold (Au) is coated alternately on the silicon nitride (SiNx) cantilevers of the pixels (Shi S et al Sensors and Actuators A at press), whereas the thermal response frequency decreases (Zhao Y 2002 Dissertation University of California, Berkeley). A circuit model for such a cantilever microstructure is proposed to be applied to evaluate the thermal response performance. The pixel's thermal frequency (1/τth) is calculated to be 10 Hz under the optimized design parameters, which is compatible with the response of optical readout systems and human eyes.

Uncooled infrared focal plane array imaging in China

NASA Astrophysics Data System (ADS)

Lei, Shuyu

2015-06-01

This article reviews the development of uncooled infrared focal plane array (UIFPA) imaging in China in the past decade. Sensors based on optical or electrical read-out mechanism were developed but the latter dominates the market. In resistive bolometers, VOx and amorphous silicon are still the two major thermal-sensing materials. The specifications of the IRFPA made by different manufactures were collected and compared. Currently more than five Chinese companies and institutions design and fabricate uncooled infrared focal plane array. Some devices have sensitivity as high as 30 mK; the largest array for commercial products is 640×512 and the smallest pixel size is 17 μm. Emphasis is given on the pixel MEMS design, ROIC design, fabrication, and packaging of the IRFPA manufactured by GWIC, especially on design for high sensitivities, low noise, better uniformity and linearity, better stabilization for whole working temperature range, full-digital design, etc.

Advanced Code-Division Multiplexers for Superconducting Detector Arrays

NASA Astrophysics Data System (ADS)

Irwin, K. D.; Cho, H. M.; Doriese, W. B.; Fowler, J. W.; Hilton, G. C.; Niemack, M. D.; Reintsema, C. D.; Schmidt, D. R.; Ullom, J. N.; Vale, L. R.

2012-06-01

Multiplexers based on the modulation of superconducting quantum interference devices are now regularly used in multi-kilopixel arrays of superconducting detectors for astrophysics, cosmology, and materials analysis. Over the next decade, much larger arrays will be needed. These larger arrays require new modulation techniques and compact multiplexer elements that fit within each pixel. We present a new in-focal-plane code-division multiplexer that provides multiplexing elements with the required scalability. This code-division multiplexer uses compact lithographic modulation elements that simultaneously multiplex both signal outputs and superconducting transition-edge sensor (TES) detector bias voltages. It eliminates the shunt resistor used to voltage bias TES detectors, greatly reduces power dissipation, allows different dc bias voltages for each TES, and makes all elements sufficiently compact to fit inside the detector pixel area. These in-focal plane code-division multiplexers can be combined with multi-GHz readout based on superconducting microresonators to scale to even larger arrays.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew

The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 x 48 pixels, each 130 mu m x 130 mu m x 520 mu m thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gatingmore » time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements.« less

The FE-I4 Pixel Readout Chip and the IBL Module

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barbero, Marlon; Arutinov, David; Backhaus, Malte

2012-05-01

FE-I4 is the new ATLAS pixel readout chip for the upgraded ATLAS pixel detector. Designed in a CMOS 130 nm feature size process, the IC is able to withstand higher radiation levels compared to the present generation of ATLAS pixel Front-End FE-I3, and can also cope with higher hit rate. It is thus suitable for intermediate radii pixel detector layers in the High Luminosity LHC environment, but also for the inserted layer at 3.3 cm known as the 'Insertable B-Layer' project (IBL), at a shorter timescale. In this paper, an introduction to the FE-I4 will be given, focusing on testmore » results from the first full size FE-I4A prototype which has been available since fall 2010. The IBL project will be introduced, with particular emphasis on the FE-I4-based module concept.« less

The Level 0 Pixel Trigger system for the ALICE experiment

NASA Astrophysics Data System (ADS)

Aglieri Rinella, G.; Kluge, A.; Krivda, M.; ALICE Silicon Pixel Detector project

2007-01-01

The ALICE Silicon Pixel Detector contains 1200 readout chips. Fast-OR signals indicate the presence of at least one hit in the 8192 pixel matrix of each chip. The 1200 bits are transmitted every 100 ns on 120 data readout optical links using the G-Link protocol. The Pixel Trigger System extracts and processes them to deliver an input signal to the Level 0 trigger processor targeting a latency of 800 ns. The system is compact, modular and based on FPGA devices. The architecture allows the user to define and implement various trigger algorithms. The system uses advanced 12-channel parallel optical fiber modules operating at 1310 nm as optical receivers and 12 deserializer chips closely packed in small area receiver boards. Alternative solutions with multi-channel G-Link deserializers implemented directly in programmable hardware devices were investigated. The design of the system and the progress of the ALICE Pixel Trigger project are described in this paper.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chumacero, E. Miguel; De Celis Alonso, B.; Martínez Hernández, M. I.

The development in semiconductor CMOS technology has enabled the creation of sensitive detectors for a wide range of ionizing radiation. These devices are suitable for photon counting and can be used in imaging and tomography X-ray diagnostics. The Medipix[1] radiation detection system is a hybrid silicon pixel chip developed for particle tracking applications in High Energy Physics. Its exceptional features (high spatial and energy resolution, embedded ultra fast readout, different operation modes, etc.) make the Medipix an attractive device for applications in medical imaging. In this work the energy characterization of a third-generation Medipix chip (Medipix3) coupled to a siliconmore » sensor is presented. We used different radiation sources (strontium 90, iron 55 and americium 241) to obtain the response curve of the hybrid detector as a function of energy. We also studied the contrast of the Medipix as a measure of pixel noise. Finally we studied the response to fluorescence X rays from different target materials (In, Pd and Cd) for the two data acquisition modes of the chip; single pixel mode and charge summing mode.« less

X-ray characterization of a multichannel smart-pixel array detector.

PubMed

Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew; Kline, David; Lee, Adam; Li, Yuelin; Rhee, Jehyuk; Tarpley, Mary; Walko, Donald A; Westberg, Gregg; Williams, George; Zou, Haifeng; Landahl, Eric

2016-01-01

The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 × 48 pixels, each 130 µm × 130 µm × 520 µm thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gating time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements.

Sensor readout detector circuit

DOEpatents

Chu, Dahlon D.; Thelen, Jr., Donald C.

1998-01-01

A sensor readout detector circuit is disclosed that is capable of detecting sensor signals down to a few nanoamperes or less in a high (microampere) background noise level. The circuit operates at a very low standby power level and is triggerable by a sensor event signal that is above a predetermined threshold level. A plurality of sensor readout detector circuits can be formed on a substrate as an integrated circuit (IC). These circuits can operate to process data from an array of sensors in parallel, with only data from active sensors being processed for digitization and analysis. This allows the IC to operate at a low power level with a high data throughput for the active sensors. The circuit may be used with many different types of sensors, including photodetectors, capacitance sensors, chemically-sensitive sensors or combinations thereof to provide a capability for recording transient events or for recording data for a predetermined period of time following an event trigger. The sensor readout detector circuit has applications for portable or satellite-based sensor systems.

Sensor readout detector circuit

DOEpatents

Chu, D.D.; Thelen, D.C. Jr.

1998-08-11

A sensor readout detector circuit is disclosed that is capable of detecting sensor signals down to a few nanoamperes or less in a high (microampere) background noise level. The circuit operates at a very low standby power level and is triggerable by a sensor event signal that is above a predetermined threshold level. A plurality of sensor readout detector circuits can be formed on a substrate as an integrated circuit (IC). These circuits can operate to process data from an array of sensors in parallel, with only data from active sensors being processed for digitization and analysis. This allows the IC to operate at a low power level with a high data throughput for the active sensors. The circuit may be used with many different types of sensors, including photodetectors, capacitance sensors, chemically-sensitive sensors or combinations thereof to provide a capability for recording transient events or for recording data for a predetermined period of time following an event trigger. The sensor readout detector circuit has applications for portable or satellite-based sensor systems. 6 figs.

LinoSPAD: a time-resolved 256×1 CMOS SPAD line sensor system featuring 64 FPGA-based TDC channels running at up to 8.5 giga-events per second

NASA Astrophysics Data System (ADS)

Burri, Samuel; Homulle, Harald; Bruschini, Claudio; Charbon, Edoardo

2016-04-01

LinoSPAD is a reconfigurable camera sensor with a 256×1 CMOS SPAD (single-photon avalanche diode) pixel array connected to a low cost Xilinx Spartan 6 FPGA. The LinoSPAD sensor's line of pixels has a pitch of 24 μm and 40% fill factor. The FPGA implements an array of 64 TDCs and histogram engines capable of processing up to 8.5 giga-photons per second. The LinoSPAD sensor measures 1.68 mm×6.8 mm and each pixel has a direct digital output to connect to the FPGA. The chip is bonded on a carrier PCB to connect to the FPGA motherboard. 64 carry chain based TDCs sampled at 400 MHz can generate a timestamp every 7.5 ns with a mean time resolution below 25 ps per code. The 64 histogram engines provide time-of-arrival histograms covering up to 50 ns. An alternative mode allows the readout of 28 bit timestamps which have a range of up to 4.5 ms. Since the FPGA TDCs have considerable non-linearity we implemented a correction module capable of increasing histogram linearity at real-time. The TDC array is interfaced to a computer using a super-speed USB3 link to transfer over 150k histograms per second for the 12.5 ns reference period used in our characterization. After characterization and subsequent programming of the post-processing we measure an instrument response histogram shorter than 100 ps FWHM using a strong laser pulse with 50 ps FWHM. A timing resolution that when combined with the high fill factor makes the sensor well suited for a wide variety of applications from fluorescence lifetime microscopy over Raman spectroscopy to 3D time-of-flight.

The Mammographic Head Demonstrator Developed in the Framework of the “IMI” Project:. First Imaging Tests Results

NASA Astrophysics Data System (ADS)

Bisogni, Maria Giuseppina

2006-04-01

In this paper we report on the performances and the first imaging test results of a digital mammographic demonstrator based on GaAs pixel detectors. The heart of this prototype is the X-ray detection unit, which is a GaAs pixel sensor read-out by the PCC/MEDIPIXI circuit. Since the active area of the sensor is 1 cm2, 18 detectors have been organized in two staggered rows of nine chips each. To cover the typical mammographic format (18 × 24 cm2) a linear scanning is performed by means of a stepper motor. The system is integrated in mammographic equipment comprehending the X-ray tube, the bias and data acquisition systems and the PC-based control system. The prototype has been developed in the framework of the integrated Mammographic Imaging (IMI) project, an industrial research activity aiming to develop innovative instrumentation for morphologic and functional imaging. The project has been supported by the Italian Ministry of Education, University and Research (MIUR) and by five Italian High Tech companies in collaboration with the universities of Ferrara, Roma “La Sapienza”, Pisa and the INFN.

Strategic options towards an affordable high-performance infrared camera

NASA Astrophysics Data System (ADS)

Oduor, Patrick; Mizuno, Genki; Dutta, Achyut K.; Lewis, Jay; Dhar, Nibir K.

2016-05-01

The promise of infrared (IR) imaging attaining low-cost akin to CMOS sensors success has been hampered by the inability to achieve cost advantages that are necessary for crossover from military and industrial applications into the consumer and mass-scale commercial realm despite well documented advantages. Banpil Photonics is developing affordable IR cameras by adopting new strategies to speed-up the decline of the IR camera cost curve. We present a new short-wave IR (SWIR) camera; 640x512 pixel InGaAs uncooled system that is high sensitivity low noise (<50e-), high dynamic range (100 dB), high-frame rates (> 500 frames per second (FPS)) at full resolution, and low power consumption (< 1 W) in a compact system. This camera paves the way towards mass market adoption by not only demonstrating high-performance IR imaging capability value add demanded by military and industrial application, but also illuminates a path towards justifiable price points essential for consumer facing application industries such as automotive, medical, and security imaging adoption. Among the strategic options presented include new sensor manufacturing technologies that scale favorably towards automation, multi-focal plane array compatible readout electronics, and dense or ultra-small pixel pitch devices.

Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD

DOE PAGES

Tiffenberg, Javier; Sofo-Haro, Miguel; Drlica-Wagner, Alex; ...

2017-09-26

Here, we have developed ultralow-noise electronics in combination with repetitive, nondestructive readout of a thick, fully depleted charge-coupled device (CCD) to achieve an unprecedented noise level of 0.068 e - rms/pixel. This is the first time that discrete subelectron readout noise has been achieved reproducible over millions of pixels on a stable, large-area detector. This enables the contemporaneous, discrete, and quantized measurement of charge in pixels, irrespective of whether they contain zero electrons or thousands of electrons. Thus, the resulting CCD detector is an ultra-sensitive calorimeter. It is also capable of counting single photons in the optical and near-infrared regime.more » Implementing this innovative non-destructive readout system has a negligible impact on CCD design and fabrication, and there are nearly immediate scientific applications. As a particle detector, this CCD will have unprecedented sensitivity to low-mass dark matter particles and coherent neutrino-nucleus scattering, while future astronomical applications may include direct imaging and spectroscopy of exoplanets.« less

Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD

NASA Astrophysics Data System (ADS)

Tiffenberg, Javier; Sofo-Haro, Miguel; Drlica-Wagner, Alex; Essig, Rouven; Guardincerri, Yann; Holland, Steve; Volansky, Tomer; Yu, Tien-Tien

2017-09-01

We have developed ultralow-noise electronics in combination with repetitive, nondestructive readout of a thick, fully depleted charge-coupled device (CCD) to achieve an unprecedented noise level of 0.068 e- rms /pixel . This is the first time that discrete subelectron readout noise has been achieved reproducible over millions of pixels on a stable, large-area detector. This enables the contemporaneous, discrete, and quantized measurement of charge in pixels, irrespective of whether they contain zero electrons or thousands of electrons. Thus, the resulting CCD detector is an ultra-sensitive calorimeter. It is also capable of counting single photons in the optical and near-infrared regime. Implementing this innovative non-destructive readout system has a negligible impact on CCD design and fabrication, and there are nearly immediate scientific applications. As a particle detector, this CCD will have unprecedented sensitivity to low-mass dark matter particles and coherent neutrino-nucleus scattering, while future astronomical applications may include direct imaging and spectroscopy of exoplanets.

Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD.

PubMed

Tiffenberg, Javier; Sofo-Haro, Miguel; Drlica-Wagner, Alex; Essig, Rouven; Guardincerri, Yann; Holland, Steve; Volansky, Tomer; Yu, Tien-Tien

2017-09-29

We have developed ultralow-noise electronics in combination with repetitive, nondestructive readout of a thick, fully depleted charge-coupled device (CCD) to achieve an unprecedented noise level of 0.068  e^{-} rms/pixel. This is the first time that discrete subelectron readout noise has been achieved reproducible over millions of pixels on a stable, large-area detector. This enables the contemporaneous, discrete, and quantized measurement of charge in pixels, irrespective of whether they contain zero electrons or thousands of electrons. Thus, the resulting CCD detector is an ultra-sensitive calorimeter. It is also capable of counting single photons in the optical and near-infrared regime. Implementing this innovative non-destructive readout system has a negligible impact on CCD design and fabrication, and there are nearly immediate scientific applications. As a particle detector, this CCD will have unprecedented sensitivity to low-mass dark matter particles and coherent neutrino-nucleus scattering, while future astronomical applications may include direct imaging and spectroscopy of exoplanets.

NbN A/D Conversion of IR Focal Plane Sensor Signal at 10 K

NASA Technical Reports Server (NTRS)

Eaton, L.; Durand, D.; Sandell, R.; Spargo, J.; Krabach, T.

1994-01-01

We are implementing a 12 bit SFQ counting ADC with parallel-to-serial readout using our established 10 K NbN capability. This circuit provides a key element of the analog signal processor (ASP) used in large infrared focal plane arrays. The circuit processes the signal data stream from a Si:As BIB detector array. A 10 mega samples per second (MSPS) pixel data stream flows from the chip at a 120 megabit bit rate in a format that is compatible with other superconductive time dependent processor (TDP) circuits being developed. We will discuss our planned ASP demonstration, the circuit design, and test results.

Detector Arrays for the James Webb Space Telescope Near-Infrared Spectrograph

NASA Technical Reports Server (NTRS)

Rauscher, Bernard J.; Alexander, David; Brambora, Clifford K.; Derro, Rebecca; Engler, Chuck; Fox, Ori; Garrison, Matthew B.; Henegar, Greg; Hill, robert J.; Johnson, Thomas;

Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Multi-MGy Total Ionizing Dose Environments

NASA Astrophysics Data System (ADS)

Goiffon, Vincent; Rolando, Sébastien; Corbière, Franck; Rizzolo, Serena; Chabane, Aziouz; Girard, Sylvain; Baer, Jérémy; Estribeau, Magali; Magnan, Pierre; Paillet, Philippe; Van Uffelen, Marco; Mont Casellas, Laura; Scott, Robin; Gaillardin, Marc; Marcandella, Claude; Marcelot, Olivier; Allanche, Timothé

2017-01-01

The Total Ionizing Dose (TID) hardness of digital color Camera-on-a-Chip (CoC) building blocks is explored in the Multi-MGy range using 60Co gamma-ray irradiations. The performances of the following CoC subcomponents are studied: radiation hardened (RH) pixel and photodiode designs, RH readout chain, Color Filter Arrays (CFA) and column RH Analog-to-Digital Converters (ADC). Several radiation hardness improvements are reported (on the readout chain and on dark current). CFAs and ADCs degradations appear to be very weak at the maximum TID of 6 MGy(SiO2), 600 Mrad. In the end, this study demonstrates the feasibility of a MGy rad-hard CMOS color digital camera-on-a-chip, illustrated by a color image captured after 6 MGy(SiO2) with no obvious degradation. An original dark current reduction mechanism in irradiated CMOS Image Sensors is also reported and discussed.

Tuning fork enhanced interferometric photoacoustic spectroscopy: a new method for trace gas analysis

NASA Astrophysics Data System (ADS)

Köhring, M.; Pohlkötter, A.; Willer, U.; Angelmahr, M.; Schade, W.

2011-01-01

A photoacoustic trace gas sensor based on an optical read-out method of a quartz tuning fork is shown. Instead of conventional piezoelectric signal read-out, as applied in well-known quartz-enhanced photoacoustic spectroscopy (QEPAS), an interferometric read-out method for measurement of the tuning fork's oscillation is presented. To demonstrate the potential of the optical read-out of tuning forks in photoacoustics, a comparison between the performances of a sensor with interferometric read-out and conventional QEPAS with piezoelectric read-out is reported. The two sensors show similar characteristics. The detection limit (L) for the optical read-out is determined to be L opt=(2598±84) ppm (1 σ) compared to L elec=(2579±78) ppm (1 σ) for piezoelectric read-out. In both cases the detection limit is defined by the thermal noise of the tuning fork.

Swap intensified WDR CMOS module for I2/LWIR fusion

NASA Astrophysics Data System (ADS)

Ni, Yang; Noguier, Vincent

2015-05-01

The combination of high resolution visible-near-infrared low light sensor and moderate resolution uncooled thermal sensor provides an efficient way for multi-task night vision. Tremendous progress has been made on uncooled thermal sensors (a-Si, VOx, etc.). It's possible to make a miniature uncooled thermal camera module in a tiny 1cm3 cube with <1W power consumption. For silicon based solid-state low light CCD/CMOS sensors have observed also a constant progress in terms of readout noise, dark current, resolution and frame rate. In contrast to thermal sensing which is intrinsic day&night operational, the silicon based solid-state sensors are not yet capable to do the night vision performance required by defense and critical surveillance applications. Readout noise, dark current are 2 major obstacles. The low dynamic range at high sensitivity mode of silicon sensors is also an important limiting factor, which leads to recognition failure due to local or global saturations & blooming. In this context, the image intensifier based solution is still attractive for the following reasons: 1) high gain and ultra-low dark current; 2) wide dynamic range and 3) ultra-low power consumption. With high electron gain and ultra low dark current of image intensifier, the only requirement on the silicon image pickup device are resolution, dynamic range and power consumption. In this paper, we present a SWAP intensified Wide Dynamic Range CMOS module for night vision applications, especially for I2/LWIR fusion. This module is based on a dedicated CMOS image sensor using solar-cell mode photodiode logarithmic pixel design which covers a huge dynamic range (> 140dB) without saturation and blooming. The ultra-wide dynamic range image from this new generation logarithmic sensor can be used directly without any image processing and provide an instant light accommodation. The complete module is slightly bigger than a simple ANVIS format I2 tube with <500mW power consumption.

Taking Advantage of Selective Change Driven Processing for 3D Scanning

PubMed Central

Vegara, Francisco; Zuccarello, Pedro; Boluda, Jose A.; Pardo, Fernando

2013-01-01

This article deals with the application of the principles of SCD (Selective Change Driven) vision to 3D laser scanning. Two experimental sets have been implemented: one with a classical CMOS (Complementary Metal-Oxide Semiconductor) sensor, and the other one with a recently developed CMOS SCD sensor for comparative purposes, both using the technique known as Active Triangulation. An SCD sensor only delivers the pixels that have changed most, ordered by the magnitude of their change since their last readout. The 3D scanning method is based on the systematic search through the entire image to detect pixels that exceed a certain threshold, showing the SCD approach to be ideal for this application. Several experiments for both capturing strategies have been performed to try to find the limitations in high speed acquisition/processing. The classical approach is limited by the sequential array acquisition, as predicted by the Nyquist–Shannon sampling theorem, and this has been experimentally demonstrated in the case of a rotating helix. These limitations are overcome by the SCD 3D scanning prototype achieving a significantly higher performance. The aim of this article is to compare both capturing strategies in terms of performance in the time and frequency domains, so they share all the static characteristics including resolution, 3D scanning method, etc., thus yielding the same 3D reconstruction in static scenes. PMID:24084110

Development of a long wave infrared detector for SGLI instrument

NASA Astrophysics Data System (ADS)

Dariel, Aurélien; Chorier, P.; Reeb, N.; Terrier, B.; Vuillermet, M.; Tribolet, P.

2007-10-01

The Japanese Aerospace Exploration Agency (JAXA) will be conducting the Global Change Observation Mission (GCOM) for monitoring of global environmental change. SGLI (Second Generation Global Imager) is an optical sensor on board GCOM-C (Climate), that includes a Long Wave IR Detector (LWIRD) sensitive up to about 13 μm. SGLI will provide high accuracy measurements of the atmosphere (aerosol, cloud ...), the cryosphere (glaciers, snow, sea ice ...), the biomass and the Earth temperature (sea and land). Sofradir is a major supplier of Space industry based on the use of a Space qualified MCT technology for detectors from 0.8 to 15 μm. This mature and reproducible technology has been used for 15 years to produce thousands of LWIR detectors with cut-off wavelengths between 9 and 12 μm. NEC Toshiba Space, prime contractor for the Second Generation Global Imager (SGLI), has selected SOFRADIR for its heritage in space projects and Mercury Cadmium Telluride (MCT) detectors to develop the LWIR detector. This detector includes two detection circuits for detection at 10.8 μm and 12.0 μm, hybridized on a single CMOS readout circuit. Each detection circuit is made of 20x2 square pixels of 140 μm. In order to optimize the overall performance, each pixel is made of 5x5 square sub-pixels of 28 μm and the readout circuit enables sub-pixel deselection. The MCT material and the photovoltaic technology are adapted to maximize response for the requested bandwidths: cut-off wavelengths of the 2 detection circuits are 12.6 and 13.4 μm at 55K. This detector is packaged into a sealed housing for full integration into a Dewar at 55K. This paper describes the main technical requirements, the design features of this detector, including trade-offs regarding performance optimization, and presents preliminary electro-optical results.

High performance digital read out integrated circuit (DROIC) for infrared imaging

NASA Astrophysics Data System (ADS)

Mizuno, Genki; Olah, Robert; Oduor, Patrick; Dutta, Achyut K.; Dhar, Nibir K.

2016-05-01

Banpil Photonics has developed a high-performance Digital Read-Out Integrated Circuit (DROIC) for image sensors and camera systems targeting various military, industrial and commercial Infrared (IR) imaging applications. The on-chip digitization of the pixel output eliminates the necessity for an external analog-to-digital converter (ADC), which not only cuts costs, but also enables miniaturization of packaging to achieve SWaP-C camera systems. In addition, the DROIC offers new opportunities for greater on-chip processing intelligence that are not possible in conventional analog ROICs prevalent today. Conventional ROICs, which typically can enhance only one high performance attribute such as frame rate, power consumption or noise level, fail when simultaneously targeting the most aggressive performance requirements demanded in imaging applications today. Additionally, scaling analog readout circuits to meet such requirements leads to expensive, high-power consumption with large and complex systems that are untenable in the trend towards SWaP-C. We present the implementation of a VGA format (640x512 pixels 15μm pitch) capacitivetransimpedance amplifier (CTIA) DROIC architecture that incorporates a 12-bit ADC at the pixel level. The CTIA pixel input circuitry has two gain modes with programmable full-well capacity values of 100K e- and 500K e-. The DROIC has been developed with a system-on-chip architecture in mind, where all the timing and biasing are generated internally without requiring any critical external inputs. The chip is configurable with many parameters programmable through a serial programmable interface (SPI). It features a global shutter, low power, and high frame rates programmable from 30 up 500 frames per second in full VGA format supported through 24 LVDS outputs. This DROIC, suitable for hybridization with focal plane arrays (FPA) is ideal for high-performance uncooled camera applications ranging from near IR (NIR) and shortwave IR (SWIR) to mid-wave IR (MWIR) and long-wave IR (LWIR) spectral bands.

The Detector and Readout Systems of the Micro-X High Resolution Microcalorimeter X-Ray Imaging Rocket

NASA Astrophysics Data System (ADS)

Wikus, P.; Doriese, W. B.; Eckart, M. E.; Adams, J. S.; Bandler, S. R.; Brekosky, R. P.; Chervenak, J. A.; Ewin, A. J.; Figueroa-Feliciano, E.; Finkbeiner, F. M.; Galeazzi, M.; Hilton, G.; Irwin, K. D.; Kelley, R. L.; Kilbourne, C. A.; Leman, S. W.; McCammon, D.; Porter, F. S.; Reintsema, C. D.; Rutherford, J. M.; Trowbridge, S. N.

2009-12-01

The Micro-X sounding rocket experiment will deploy an imaging transition-edge-sensor (TES) microcalorimeter spectrometer to observe astrophysical sources in the 0.2-3.0 keV band. The instrument has been designed at a systems level, and the first items of flight hardware are presently being built. In the first flight, planned for January 2011, the spectrometer will observe a recently discovered Silicon knot in the Puppis-A supernova remnant. Here we describe the design of the Micro-X science instrument, focusing on the instrument's detector and detector assembly. The current design of the 2-dimensional spectrometer array contains 128 close-packed pixels with a pitch of 600 μm. The conically approximated Wolter-1 mirror will map each of these pixels to a 0.95 arcmin region on the sky; the field of view will be 11.4 arcmin. Targeted energy resolution of the TESs is about 2 eV over the full observing band. A SQUID time-division multiplexer (TDM) will read out the array. The detector time constants will be engineered to approximately 2 ms to match the TDM, which samples each pixel at 32.6 kHz, limited only by the telemetry system of the rocket. The detector array and two SQUID stages of the TDM readout system are accommodated in a lightweight Mg enclosure, which is mounted to the 50 mK stage of an adiabatic demagnetization refrigerator. A third SQUID amplification stage is located on the 1.6 K liquid He stage of the cryostat. An on-board 55-Fe source will fluoresce a Ca target, providing 3.69 and 4.01 keV calibration lines that will not interfere with the scientifically interesting energy band.

The Focal Plane Assembly for the Athena X-Ray Integral Field Unit Instrument

NASA Technical Reports Server (NTRS)

Jackson, B. D.; Van Weers, H.; van der Kuur, J.; den Hartog, R.; Akamatsu, H.; Argan, A.; Bandler, S. R.; Barbera, M.; Barret, D.; Bruijn, M. P.;

Power pulsing of the CMOS sensor Mimosa 26

NASA Astrophysics Data System (ADS)

Kuprash, Oleg

2013-12-01

Mimosa 26 is a monolithic active pixel sensor developed by IPHC (Strasbourg) & IRFU (Saclay) as a prototype for the ILC vertex detector studies. The resolution requirements for the ILC tracking detector are very extreme, demanding very low material in the detector, thus only air cooling can be considered. Power consumption has to be reduced as far as possible. The beam structure of the ILC allows the possibility of power pulsing: only for about the 1 ms long bunch train full power is required, and during the 199 ms long pauses between the bunch trains the power can be reduced to a minimum. Not being adapted for the power pulsing, the sensor shows in laboratory tests a good performance under power pulsing. The power pulsing allows to significantly reduce the heating of the chip and divides power consumption approximately by a factor of 6. In this report a summary of power pulsing studies using the digital readout of Mimosa 26 is given.

Readout of a 176 pixel FDM system for SAFARI TES arrays

NASA Astrophysics Data System (ADS)

Hijmering, R. A.; den Hartog, R.; Ridder, M.; van der Linden, A. J.; van der Kuur, J.; Gao, J. R.; Jackson, B.

2016-07-01

In this paper we present the results of our 176-pixel prototype of the FDM readout system for SAFARI, a TES-based focal-plane instrument for the far-IR SPICA mission. We have implemented the knowledge obtained from the detailed study on electrical crosstalk reported previously. The effect of carrier leakage is reduced by a factor two, mutual impedance is reduced to below 1 nH and mutual inductance is removed. The pixels are connected in stages, one quarter of the array half of the array and the full array, to resolve intermediate technical issues. A semi-automated procedure was incorporated to find all optimal settings for all pixels. And as a final step the complete array has been connected and 132 pixels have been read out simultaneously within the frequency range of 1-3.8MHz with an average frequency separation of 16kHz. The noise was found to be detector limited and was not affected by reading out all pixels in a FDM mode. With this result the concept of using FDM for multiplexed bolometer read out for the SAFARI instrument has been demonstrated.

A low-noise wide-dynamic-range event-driven detector using SOI pixel technology for high-energy particle imaging

NASA Astrophysics Data System (ADS)

Shrestha, Sumeet; Kamehama, Hiroki; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Takeda, Ayaki; Tsuru, Takeshi Go; Arai, Yasuo

2015-08-01

This paper presents a low-noise wide-dynamic-range pixel design for a high-energy particle detector in astronomical applications. A silicon on insulator (SOI) based detector is used for the detection of wide energy range of high energy particles (mainly for X-ray). The sensor has a thin layer of SOI CMOS readout circuitry and a thick layer of high-resistivity detector vertically stacked in a single chip. Pixel circuits are divided into two parts; signal sensing circuit and event detection circuit. The event detection circuit consisting of a comparator and logic circuits which detect the incidence of high energy particle categorizes the incident photon it into two energy groups using an appropriate energy threshold and generate a two-bit code for an event and energy level. The code for energy level is then used for selection of the gain of the in-pixel amplifier for the detected signal, providing a function of high-dynamic-range signal measurement. The two-bit code for the event and energy level is scanned in the event scanning block and the signals from the hit pixels only are read out. The variable-gain in-pixel amplifier uses a continuous integrator and integration-time control for the variable gain. The proposed design allows the small signal detection and wide dynamic range due to the adaptive gain technique and capability of correlated double sampling (CDS) technique of kTC noise canceling of the charge detector.

A zirconium dioxide ammonia microsensor integrated with a readout circuit manufactured using the 0.18 μm CMOS process.

PubMed

Lin, Guan-Ming; Dai, Ching-Liang; Yang, Ming-Zhi

2013-03-15

The study presents an ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated sensor chip consists of a heater, an ammonia sensor and a readout circuit. The ammonia sensor is constructed by a sensitive film and the interdigitated electrodes. The sensitive film is zirconium dioxide that is coated on the interdigitated electrodes. The heater is used to provide a working temperature to the sensitive film. A post-process is employed to remove the sacrificial layer and to coat zirconium dioxide on the sensor. When the sensitive film adsorbs or desorbs ammonia gas, the sensor produces a change in resistance. The readout circuit converts the resistance variation of the sensor into the output voltage. The experiments show that the integrated ammonia sensor has a sensitivity of 4.1 mV/ppm.

The Solid State Image Sensor's Contribution To The Development Of Silicon Technology

NASA Astrophysics Data System (ADS)

Weckler, Gene P.

1985-12-01

Until recently, a solid-state image sensor with full television resolution was a dream. However, the dream of a solid state image sensor has been a driving force in the development of silicon technology for more than twenty-five years. There are probably many in the main stream of semiconductor technology who would argue with this; however, the solid state image sensor was conceived years before the invention of the semi conductor RAM or the microprocessor (i.e., even before the invention of the integrated circuit). No other potential application envisioned at that time required such complexity. How could anyone have ever hoped in 1960 to make a semi conductor chip containing half-a-million picture elements, capable of resolving eight to twelve bits of infornation, and each capable of readout rates in the tens of mega-pixels per second? As early as 1960 arrays of p-n junctions were being investigated as the optical targets in vidicon tubes, replacing the photoconductive targets. It took silicon technology several years to catch up with these dreamers.

Implementation of Complex Signal Processing Algorithms for Position-Sensitive Microcalorimeters

NASA Technical Reports Server (NTRS)

Smith, Stephen J.

2008-01-01

We have recently reported on a theoretical digital signal-processing algorithm for improved energy and position resolution in position-sensitive, transition-edge sensor (POST) X-ray detectors [Smith et al., Nucl, lnstr and Meth. A 556 (2006) 2371. PoST's consists of one or more transition-edge sensors (TES's) on a large continuous or pixellated X-ray absorber and are under development as an alternative to arrays of single pixel TES's. PoST's provide a means to increase the field-of-view for the fewest number of read-out channels. In this contribution we extend the theoretical correlated energy position optimal filter (CEPOF) algorithm (originally developed for 2-TES continuous absorber PoST's) to investigate the practical implementation on multi-pixel single TES PoST's or Hydras. We use numerically simulated data for a nine absorber device, which includes realistic detector noise, to demonstrate an iterative scheme that enables convergence on the correct photon absorption position and energy without any a priori assumptions. The position sensitivity of the CEPOF implemented on simulated data agrees very well with the theoretically predicted resolution. We discuss practical issues such as the impact of random arrival phase of the measured data on the performance of the CEPOF. The CEPOF algorithm demonstrates that full-width-at- half-maximum energy resolution of < 8 eV coupled with position-sensitivity down to a few 100 eV should be achievable for a fully optimized device.

Development of arrays of position-sensitive microcalorimeters for Constellation-X

NASA Astrophysics Data System (ADS)

Smith, Stephen J.; Bandler, Simon R.; Brekosky, Regis P.; Brown, Ari-D.; Chervenak, James A.; Eckart, Megan E.; Figueroa-Feliciano, Enectali; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.; Porter, F. Scott; Sadleir, John E.

2008-07-01

We are developing arrays of position-sensitive transition-edge sensor (PoST) X-ray detectors for future astronomy missions such as NASA's Constellation-X. The PoST consists of multiple absorbers thermally coupled to one or more transition-edge sensor (TES). Each absorber element has a different thermal coupling to the TES. This results in a distribution of different pulse shapes and enables position discrimination between the absorber elements. PoST's are motivated by the desire to achieve the largest possible focal plane area with the fewest number of readout channels and are ideally suited to increasing the Constellation-X focal plane area, without comprising on spatial sampling. Optimizing the performance of PoST's requires careful design of key parameters such as the thermal conductances between the absorbers, TES and the heat sink, as well as the absorber heat capacities. Our new generation of PoST's utilizes technology successfully developed on high resolution (~ 2.5 eV) single pixels arrays of Mo/Au TESs, also under development for Constellation-X. This includes noise mitigation features on the TES and low resistivity electroplated absorbers. We report on the first experimental results from new one-channel, four-pixel, PoST's or 'Hydras', consisting of composite Au/Bi absorbers. We have achieved full-width-at-half-maximum energy resolution of between 5-6 eV on all four Hydra pixels with an exponential decay time constant of 620 μs. Straightforward position discrimination by means of rise time is also demonstrated.

Characterization of Pixelated Cadmium-Zinc-Telluride Detectors for Astrophysical Applications

NASA Technical Reports Server (NTRS)

Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

2003-01-01

Comparisons of charge sharing and charge loss measurements between two pixelated Cadmium-Zinc-Telluride (CdZnTe) detectors are discussed. These properties along with the detector geometry help to define the limiting energy resolution and spatial resolution of the detector in question. The first detector consists of a 1-mm-thick piece of CdZnTe sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). Signal readout is via discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). This crystal is bonded to a custom-built readout chip (ASIC) providing all front-end electronics to each of the 256 independent pixels. These detectors act as precursors to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giraldo, L. Ocampo; Bolotnikov, A. E.; Camarda, G. S.

For this study, we evaluated the X-Y position resolution achievable in 3D pixelated detectors by processing the signal waveforms readout from neighboring pixels. In these measurements we used a focused light beam, down to 10 μm, generated by a ~1 mW pulsed laser (650 nm) to carry out raster scans over selected 3×3 pixel areas, while recording the charge signals from the 9 pixels and the cathode using two synchronized digital oscilloscopes.

A microfabricated fringing field capacitive pH sensor with an integrated readout circuit

NASA Astrophysics Data System (ADS)

Arefin, Md Shamsul; Bulut Coskun, M.; Alan, Tuncay; Redoute, Jean-Michel; Neild, Adrian; Rasit Yuce, Mehmet

2014-06-01

This work presents a microfabricated fringe-field capacitive pH sensor using interdigitated electrodes and an integrated modulation-based readout circuit. The changes in capacitance of the sensor result from the permittivity changes due to pH variations and are converted to frequency shifts using a crossed-coupled voltage controlled oscillator readout circuit. The shift in resonant frequency of the readout circuit is 30.96 MHz for a change in pH of 1.0-5.0. The sensor can be used for the measurement of low pH levels, such as gastric acid, and can be integrated with electronic pills. The measurement results show high repeatability, low noise, and a stable output.

A 256 pixel magnetoresistive biosensor microarray in 0.18μm CMOS

PubMed Central

Hall, Drew A.; Gaster, Richard S.; Makinwa, Kofi; Wang, Shan X.; Murmann, Boris

2014-01-01

Magnetic nanotechnologies have shown significant potential in several areas of nanomedicine such as imaging, therapeutics, and early disease detection. Giant magnetoresistive spin-valve (GMR SV) sensors coupled with magnetic nanotags (MNTs) possess great promise as ultra-sensitive biosensors for diagnostics. We report an integrated sensor interface for an array of 256 GMR SV biosensors designed in 0.18 μm CMOS. Arranged like an imager, each of the 16 column level readout channels contains an analog front- end and a compact ΣΔ modulator (0.054 mm2) with 84 dB of dynamic range and an input referred noise of 49 nT/√Hz. Performance is demonstrated through detection of an ovarian cancer biomarker, secretory leukocyte peptidase inhibitor (SLPI), spiked at concentrations as low as 10 fM. This system is designed as a replacement for optical protein microarrays while also providing real-time kinetics monitoring. PMID:24761029

Evaluation of a hybrid pixel detector for electron microscopy.

PubMed

Faruqi, A R; Cattermole, D M; Henderson, R; Mikulec, B; Raeburn, C

2003-04-01

We describe the application of a silicon hybrid pixel detector, containing 64 by 64 pixels, each 170 microm(2), in electron microscopy. The device offers improved resolution compared to CCDs along with faster and noiseless readout. Evaluation of the detector, carried out on a 120 kV electron microscope, demonstrates the potential of the device.

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

NASA Astrophysics Data System (ADS)

Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including: the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half-maximum (FWHM) across the entire dynamic range, and a noise floor about 20 keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications.

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

PubMed Central

Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

2014-01-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including; the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor about 20keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications. PMID:25937684

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications.

PubMed

Barber, W C; Wessel, J C; Nygard, E; Iwanczyk, J S

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including; the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor about 20keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications.

Performance of the QWIP Focal Plane Arrays for NASA's Landsat Data Continuity Mission

NASA Technical Reports Server (NTRS)

Jhabvala, M.; Choi, K.; Waczynski, A.; La, A.; Sundaram, M.; Costard, E.; Jhabvala, C.; Kan, E.; Kahle, D.; Foltz, R.;

First Tests of Prototype SCUBA-2 Superconducting Bolometer Array

NASA Astrophysics Data System (ADS)

Woodcraft, Adam L.; Ade, Peter A. R.; Bintley, Dan; Hunt, Cynthia L.; Sudiwala, Rashmi V.; Hilton, Gene C.; Irwin, Kent D.; Reintsema, Carl D.; Audley, Michael D.; Holland, Wayne S.; MacIntosh, Mike

2006-09-01

We present results of the first tests on a 1280 pixel superconducting bolometer array, a prototype for SCUBA-2, a sub-mm camera being built for the James Clerk Maxwell Telescope in Hawaii. The bolometers are TES (transition edge sensor) detectors; these take advantage of the large variation of resistance with temperature through the superconducting transition. To keep the number of wires reasonable, a multiplexed read-out is used. Each pixel is read out through an individual DC SQUID; room temperature electronics switch between rows in the array by biasing the appropriate SQUIDs in turn. Arrays of 100 SQUIDs in series for each column then amplify the output. Unlike previous TES arrays, the multiplexing elements are located beneath each pixel, making large arrays possible, but construction more challenging. The detectors are constructed from Mo/Cu bi-layers; this technique enables the transition temperature to be tuned using the proximity effect by choosing the thickness of the normal and superconducting materials. To achieve the required performance, the detectors are operated at a temperature of approximately 120 mK. We describe the results of a basic characterisation of the array, demonstrating that it is fully operational, and give the results of signal to noise measurements.

Opto-mechanical design of PANIC

NASA Astrophysics Data System (ADS)

Fried, Josef W.; Baumeister, Harald; Huber, Armin; Laun, Werner; Rohloff, Ralf-Rainer; Concepción Cárdenas, M.

2010-07-01

PANIC, the Panoramic Near-Infrared Camera, is a new instrument for the Calar Alto Observatory. A 4x4 k detector yields a field of view of 0.5x0.5 degrees at a pixel scale of 0.45 arc sec/pixel at the 2.2m telescope. PANIC can be used also at the 3.5m telescope with half the pixel scale. The optics consists of 9 lenses and 3 folding mirrors. Mechanical tolerances are as small as 50 microns for some elements. PANIC will have a low thermal background due to cold stops. Read-out is done with MPIA's own new electronics which allows read-out of 132 channels in parallel. Weight and size limits lead to interesting design features. Here we describe the opto-mechanical design.

Status and Plan for The Upgrade of The CMS Pixel Detector

NASA Astrophysics Data System (ADS)

Lu, Rong-Shyang; CMS Collaboration

2016-04-01

The silicon pixel detector is the innermost component of the CMS tracking system and plays a crucial role in the all-silicon CMS tracker. While the current pixel tracker is designed for and performing well at an instantaneous luminosity of up to 1 ×1034cm-2s-1, it can no longer be operated efficiently at significantly higher values. Based on the strong performance of the LHC accelerator, it is anticipated that peak luminosities of two times the design luminosity are likely to be reached before 2018 and perhaps significantly exceeded in the running period until 2022, referred to as LHC Run 3. Therefore, an upgraded pixel detector, referred to as the phase 1 upgrade, is planned for the year-end technical stop in 2016. With a new pixel readout chip (ROC), an additional fourth layer, two additional endcap disks, and a significantly reduced material budget the upgraded pixel detector will be able to sustain the efficiency of the pixel tracker at the increased requirements imposed by high luminosities and pile-up. The main new features of the upgraded pixel detector will be an ultra-light mechanical design, a digital readout chip with higher rate capability and a new cooling system. These and other design improvements, along with results of Monte Carlo simulation studies for the expected performance of the new pixel detector, will be discussed and compared to those of the current CMS detector.

Direct reading of charge multipliers with a self-triggering CMOS analog chip with 105 k pixels at 50 μm pitch

NASA Astrophysics Data System (ADS)

Bellazzini, R.; Spandre, G.; Minuti, M.; Baldini, L.; Brez, A.; Cavalca, F.; Latronico, L.; Omodei, N.; Massai, M. M.; Sgro', C.; Costa, E.; Soffitta, P.; Krummenacher, F.; de Oliveira, R.

2006-10-01

We report on a large area (15×15 mm2), high channel density (470 pixel/mm2), self-triggering CMOS analog chip that we have developed as a pixelized charge collecting electrode of a Micropattern Gas Detector. This device represents a big step forward both in terms of size and performance, and is in fact the last version of three generations of custom ASICs of increasing complexity. The top metal layer of the CMOS pixel array is patterned in a matrix of 105,600 hexagonal pixels with a 50 μm pitch. Each pixel is directly connected to the underlying full electronics chain which has been realized in the remaining five metal and single poly-silicon layers of a 0.18 μm VLSI technology. The chip, which has customizable self-triggering capabilities, also includes a signal pre-processing function for the automatic localization of the event coordinates. Thanks to these advances it is possible to significantly reduce the read-out time and the data volume by limiting the signal output only to those pixels belonging to the region of interest. In addition to the reduced read-out time and data volume, the very small pixel area and the use of a deep sub-micron CMOS technology has allowed bringing the noise down to 50 electrons ENC. Results from in depth tests of this device when coupled to a fine pitch (50 μm on a triangular pattern) Gas Electron Multiplier are presented. It was found that matching the read-out and gas amplification pitch allows getting optimal results. The experimental detector response to polarized and unpolarized X-ray radiation when working with two gas mixtures and two different photon energies is shown and the application of this detector for Astronomical X-ray Polarimetry is discussed. Results from a full Monte-Carlo simulation for several galactic and extragalactic astronomical sources are also reported.

The IBL readout system

NASA Astrophysics Data System (ADS)

Dopke, J.; Falchieri, D.; Flick, T.; Gabrielli, A.; Kugel, A.; Mättig, P.; Morettini, P.; Polini, A.; Schroer, N.

2011-01-01

The first upgrade for the ATLAS Pixel Detector will be an additional layer, which is called IBL (Insertable B-Layer). To readout this new layer, built from new electronics, an update of the readout electronics is necessary. The aim is to develop a system which is capable to read out at a higher bandwidth, but also compatible with the existing system to be integrated into it. This paper describes the necessary development to reach a new readout system, concentrating on the requirements of a newly designed Back of Crate card as the optical interface in the counting room.

Twenty-four-micrometer-pitch microelectrode array with 6912-channel readout at 12 kHz via highly scalable implementation for high-spatial-resolution mapping of action potentials.

PubMed

Ogi, Jun; Kato, Yuri; Matoba, Yoshihisa; Yamane, Chigusa; Nagahata, Kazunori; Nakashima, Yusaku; Kishimoto, Takuya; Hashimoto, Shigeki; Maari, Koichi; Oike, Yusuke; Ezaki, Takayuki

2017-12-19

A 24-μm-pitch microelectrode array (MEA) with 6912 readout channels at 12 kHz and 23.2-μV rms random noise is presented. The aim is to reduce noise in a "highly scalable" MEA with a complementary metal-oxide-semiconductor integration circuit (CMOS-MEA), in which a large number of readout channels and a high electrode density can be expected. Despite the small dimension and the simplicity of the in-pixel circuit for the high electrode-density and the relatively large number of readout channels of the prototype CMOS-MEA chip developed in this work, the noise within the chip is successfully reduced to less than half that reported in a previous work, for a device with similar in-pixel circuit simplicity and a large number of readout channels. Further, the action potential was clearly observed on cardiomyocytes using the CMOS-MEA. These results indicate the high-scalability of the CMOS-MEA. The highly scalable CMOS-MEA provides high-spatial-resolution mapping of cell action potentials, and the mapping can aid understanding of complex activities in cells, including neuron network activities.

5A Zirconium Dioxide Ammonia Microsensor Integrated with a Readout Circuit Manufactured Using the 0.18 μm CMOS Process

PubMed Central

Lin, Guan-Ming; Dai, Ching-Liang; Yang, Ming-Zhi

2013-01-01

The study presents an ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated sensor chip consists of a heater, an ammonia sensor and a readout circuit. The ammonia sensor is constructed by a sensitive film and the interdigitated electrodes. The sensitive film is zirconium dioxide that is coated on the interdigitated electrodes. The heater is used to provide a working temperature to the sensitive film. A post-process is employed to remove the sacrificial layer and to coat zirconium dioxide on the sensor. When the sensitive film adsorbs or desorbs ammonia gas, the sensor produces a change in resistance. The readout circuit converts the resistance variation of the sensor into the output voltage. The experiments show that the integrated ammonia sensor has a sensitivity of 4.1 mV/ppm. PMID:23503294

CCDiode: an optimal detector for laser confocal microscopes

NASA Astrophysics Data System (ADS)

Pawley, James B.; Blouke, Morley M.; Janesick, James R.

1996-04-01

The laser confocal microscope (LCM) is now an established research tool in biology and materials science. In biological applications, it is usually employed to detect the location of fluorescent market molecules and, under these conditions, signal levels from bright areas are often < 20 photons/pixel (from the specimen, assuming a standard 512 X 768, 1 sec. scan). Although this data rate limits the speed at which information can be derived from the specimen, saturation of the fluorophor, photobleaching of the dye, and phototoxicity prevent it being increased. Currently, most LCMs use photomultiplier tubes (PMT, QE equals 1 - 30% 400 - 900 nm). By contrast, rear-illuminated, scientific charge-coupled devices (CCD) now routinely readout the signal from square sensors approximately 30 micrometers on a side with a QE of 80 - 90%, a noise of only +/- 3 e-/pix and with no multiplicative noise. For this reason, in 1989, one of us (JJ) developed a rear-illuminated, single-channel Si sensor, called the Turbodiode, employing some of the sophisticated readout techniques used to measure charge in a scientific CCD. We are now extending this work to a device in which a single 36 X 36 micrometers sensor is read out through a low-noise FET charge amplifier with a reset circuit and then passed to a correlated, double-sampling digitizer. To maintain the desired +/- 3 e noise level at the relatively high data rate of 1 MHz, our new device utilizes 64 separate readout amplifier/digitizer systems, operating in sequence. The resulting detector is more compact, efficient and reliable than the PMT it replaces but as its sensitive area is smaller than that of a PMT, it will require auxiliary optics when used with any LCM having a large (mm) pinhole. As the signal light is parallel, a simple lens mounted axially and with the CCDiode at its focus would suffice. Future versions may use 3 X 3 or 5 X 5 arrays of sensors to `track' the confocal spot as it is deflected by inhomogeneities of the specimen, change its effective size or shape or detect system misalignment.

Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

NASA Astrophysics Data System (ADS)

Jungmann-Smith, J. H.; Bergamaschi, A.; Brückner, M.; Cartier, S.; Dinapoli, R.; Greiffenberg, D.; Jaggi, A.; Maliakal, D.; Mayilyan, D.; Medjoubi, K.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Ruder, Ch.; Schädler, L.; Schmitt, B.; Shi, X.; Tinti, G.

2015-12-01

JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 104 photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm2 pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm2. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

Multicolor Detectors for Ultrasensitive Long-Wave Imaging Cameras

NASA Technical Reports Server (NTRS)

Brown, Ari; Benford, Dominic; Chervenak, James; Wollack, Edward

2012-01-01

A document describes a zeptobolometer for ultrasensitive, long-wavelength sensors. GSFC is developing pixels based on the zeptobolometer design that sense three THz wavelengths simultaneously. Two innovations are described in the document: (1) a quasiparticle (QO) filter arrangement that enables a compact multicolor spectrum at the focal plane, and (2) a THz antenna readout by up to three bolometers. The innovations enable high efficiency by greatly reducing high, frequency-dependent microstrip losses, and pixel compactness by eliminating the need for bulky filters in the focal plane. The zeptobolometer is a small TES bolometer, on the scale of a few microns, which can be readily coupled through an impedance-matching resistor to a metal or dielectric antenna. The bolometer is voltage-biased in its superconducting transition, allowing the use of superconducting RF multiplexers to read out large arrays. The antenna is geometrically tapped at three locations so as to efficiently couple radiation of three distinct wavelengths to the individual TESs. The transition edge hot electrons in metals offer a simple, compact arrangement for antenna readout, which can be crucial in the THz where line losses at high frequencies can be substantial. A metallic grill filter acts as a high-pass filter and directs the low-frequency components to a location where they will be absorbed. The absorption spectrum shows that three well-separated THz bands are feasible. The filters can be made from high-purity dielectrics such as float zone silicon or sapphire.

The Binary Offset Effect in CCDs: an Anomalous Readout Artifact Affecting Most Astronomical CCDs in Use

NASA Astrophysics Data System (ADS)

Boone, Kyle Robert; Aldering, Gregory; Copin, Yannick; Dixon, Samantha; Domagalski, Rachel; Gangler, Emmanuel; Pecontal, Emmanuel; Perlmutter, Saul; Nearby Supernova Factory Collaboration

2018-01-01

We discovered an anomalous behavior of CCD readout electronics that affects their use in many astronomical applications, which we call the “binary offset effect”. Due to feedback in the readout electronics, an offset is introduced in the values read out for each pixel that depends on the binary encoding of the previously read-out pixel values. One consequence of this effect is that a pathological local background offset can be introduced in images that only appears where science data are present on the CCD. The amplitude of this introduced offset does not scale monotonically with the amplitude of the objects in the image, and can be up to 4.5 ADU per pixel for certain instruments. Additionally, this background offset will be shifted by several pixels from the science data, potentially distorting the shape of objects in the image. We tested 22 instruments for signs of the binary offset effect and found evidence of it in 16 of them, including LRIS and DEIMOS on the Keck telescopes, WFC3-UVIS and STIS on HST, MegaCam on CFHT, SNIFS on the UH88 telescope, GMOS on the Gemini telescopes, HSC on Subaru, and FORS on VLT. A large amount of archival data is therefore affected by the binary offset effect, and conventional methods of reducing CCD images do not measure or remove the introduced offsets. As a demonstration of how to correct for the binary offset effect, we have developed a model that can accurately predict and remove the introduced offsets for the SNIFS instrument on the UH88 telescope. Accounting for the binary offset effect is essential for precision low-count astronomical observations with CCDs.

MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes

NASA Astrophysics Data System (ADS)

Jang, Munseon; Yun, Kwang-Seok

2017-12-01

In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100-400 kPa.

Practical Considerations for Optimizing Position Sensitivity in Arrays of Position-sensitive TES's

NASA Technical Reports Server (NTRS)

Smith, Stephen J.; Bandler, Simon R.; Figueroa-Feliciano, Encetali; Iyomoto, Naoko; Kelley, Richard L.; Kilbourne, Caroline A.; Porder, Frederick S.; Sadleir, John E.

2007-01-01

We are developing Position-Sensitive Transitions-Edge Sensors (PoST's) for future X-ray astronomy missions such as NASA's Constellation-X. The PoST consists of one or more Transitions Edge Sensors (TES's) thermally connected to a large X-ray absorber, which through heat diffusion, gives rise to position dependence. The development of PoST's is motivated by the desire to achieve the largest the focal-plan coverage with the fewest number of readout channels. In order to develop a practical array, consisting of an inner pixellated core with an outer array of large absorber PoST's, we must be able to simultaneously read out all (-1800) channels in the array. This is achievable using time division multiplexing (TDM), but does set stringent slew rate requirements on the array. Typically, we must damp the pulses to reduce the slew rate of the input signal to the TDM. This is achieved by applying a low-pass analog filter with large inductance to the signal. This attenuates the high frequency components of the signal, essential for position discrimination in PoST's, relative to the white noise of the readout chain and degrades the position sensitivity. Using numerically simulated data, we investigate the position sensing ability of typical PoST designs under such high inductance conditions. We investigate signal-processing techniques for optimal determination of the event position and discuss the practical considerations for real-time implementation.

Read-out electronics for DC squid magnetic measurements

DOEpatents

Ganther, Jr., Kenneth R.; Snapp, Lowell D.

2002-01-01

Read-out electronics for DC SQUID sensor systems, the read-out electronics incorporating low Johnson noise radio-frequency flux-locked loop circuitry and digital signal processing algorithms in order to improve upon the prior art by a factor of at least ten, thereby alleviating problems caused by magnetic interference when operating DC SQUID sensor systems in magnetically unshielded environments.

Using a pulsed laser beam to investigate the feasibility of sub-pixel position resolution with time-correlated transient signals in 3D pixelated CdZnTe detectors

DOE PAGES

Giraldo, L. Ocampo; Bolotnikov, A. E.; Camarda, G. S.; ...

2017-04-20

For this study, we evaluated the X-Y position resolution achievable in 3D pixelated detectors by processing the signal waveforms readout from neighboring pixels. In these measurements we used a focused light beam, down to 10 μm, generated by a ~1 mW pulsed laser (650 nm) to carry out raster scans over selected 3×3 pixel areas, while recording the charge signals from the 9 pixels and the cathode using two synchronized digital oscilloscopes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allman, M. S., E-mail: shane.allman@boulder.nist.gov; Verma, V. B.; Stevens, M.

We demonstrate a 64-pixel free-space-coupled array of superconducting nanowire single photon detectors optimized for high detection efficiency in the near-infrared range. An integrated, readily scalable, multiplexed readout scheme is employed to reduce the number of readout lines to 16. The cryogenic, optical, and electronic packaging to read out the array as well as characterization measurements are discussed.

3D reconstruction of nuclear reactions using GEM TPC with planar readout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bihałowicz, Jan Stefan

2015-02-24

The research program of the Extreme Light Infrastructure – Nuclear Physics (ELI-NP) laboratory under construction in Magurele, Romania facilities the need of developing a gaseous active-target detector providing 3D reconstruction of charged products of nuclear reactions induced by gamma beam. The monoenergetic, high-energy (E{sub γ} > 19 MeV) gamma beam of intensity 10{sup 13}γ/s allows studying nuclear reactions in astrophysics. A Time Projection Chamber with crossed strip readout (eTPC) is proposed as one of the imaging detectors. The special feature of the readout electrode structure is a 2D reconstruction based on the information read out simultaneously from three arrays ofmore » strips that form virtual pixels. It is expected to reach similar spatial resolution as for pixel readout at largely reduced cost of electronics. The paper presents the current progress and first results of the small scale prototype TPC which is a one of implementation steps towards eTPC detector proposed in the Technical Design Report of Charged Particles Detection at ELI-NP.« less

Nanosecond monolithic CMOS readout cell

DOEpatents

Souchkov, Vitali V.

2004-08-24

A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

Operational characteristics of Wedge and Strip image readout systems

NASA Technical Reports Server (NTRS)

Siegmund, O. H. W.; Lampton, M.; Bixler, J.; Bowyer, S.; Malina, R. F.

1986-01-01

Application of the Wedge and Strip readout system in microchannel plate detectors for the Extreme Ultraviolet Explorer and FAUST space astronomy programs is discussed. Anode designs with high resolution (greater than 600 x 600 pixels) in imaging and spectroscopy applications have been developed. Extension of these designs to larger formats (100 mm) with higher resolution (3000 x 3000 pixels) are considered. It is shown that the resolution and imaging are highly stable, and that the flat field performance is essentially limited by photon statistics. Very high speed event response has also been achieved with output pulses having durations of less than 10 nanoseconds.

JUNGFRAU 0.2: prototype characterization of a gain-switching, high dynamic range imaging system for photon science at SwissFEL and synchrotrons

NASA Astrophysics Data System (ADS)

Jungmann-Smith, J. H.; Bergamaschi, A.; Cartier, S.; Dinapoli, R.; Greiffenberg, D.; Johnson, I.; Maliakal, D.; Mezza, D.; Mozzanica, A.; Ruder, Ch; Schaedler, L.; Schmitt, B.; Shi, X.; Tinti, G.

2014-12-01

JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional pixel detector for photon science applications at free electron lasers and synchrotron light sources. It is developed for the SwissFEL currently under construction at the Paul Scherrer Institute, Switzerland. Characteristics of this application-specific integrating circuit readout chip include single photon sensitivity and low noise over a dynamic range of over four orders of magnitude of photon input signal. These characteristics are achieved by a three-fold gain-switching preamplifier in each pixel, which automatically adjusts its gain to the amount of charge deposited on the pixel. The final JUNGFRAU chip comprises 256 × 256 pixels of 75 × 75 μm2 each. Arrays of 2 × 4 chips are bump-bonded to monolithic detector modules of about 4 × 8 cm2. Multi-module systems up to 16 Mpixels are planned for the end stations at SwissFEL. A readout rate in excess of 2 kHz is anticipated, which serves the readout requirements of SwissFEL and enables high count rate synchrotron experiments with a linear count rate capability of > 20 MHz/pixel. Promising characterization results from a 3.6 × 3.6 mm2 prototype (JUNGFRAU 0.2) with fluorescence X-ray, infrared laser and synchrotron irradiation are shown. The results include an electronic noise as low as 100 electrons root-mean-square, which enables single photon detection down to X-ray energies of about 2 keV. Noise below the Poisson fluctuation of the photon number and a linearity error of the pixel response of about 1% are demonstrated. First imaging experiments successfully show automatic gain switching. The edge spread function of the imaging system proves to be comparable in quality to single photon counting hybrid pixel detectors.

User-interactive electronic skin for instantaneous pressure visualization

NASA Astrophysics Data System (ADS)

Wang, Chuan; Hwang, David; Yu, Zhibin; Takei, Kuniharu; Park, Junwoo; Chen, Teresa; Ma, Biwu; Javey, Ali

2013-10-01

Electronic skin (e-skin) presents a network of mechanically flexible sensors that can conformally wrap irregular surfaces and spatially map and quantify various stimuli. Previous works on e-skin have focused on the optimization of pressure sensors interfaced with an electronic readout, whereas user interfaces based on a human-readable output were not explored. Here, we report the first user-interactive e-skin that not only spatially maps the applied pressure but also provides an instantaneous visual response through a built-in active-matrix organic light-emitting diode display with red, green and blue pixels. In this system, organic light-emitting diodes (OLEDs) are turned on locally where the surface is touched, and the intensity of the emitted light quantifies the magnitude of the applied pressure. This work represents a system-on-plastic demonstration where three distinct electronic components—thin-film transistor, pressure sensor and OLED arrays—are monolithically integrated over large areas on a single plastic substrate. The reported e-skin may find a wide range of applications in interactive input/control devices, smart wallpapers, robotics and medical/health monitoring devices.

User-interactive electronic skin for instantaneous pressure visualization.

PubMed

Wang, Chuan; Hwang, David; Yu, Zhibin; Takei, Kuniharu; Park, Junwoo; Chen, Teresa; Ma, Biwu; Javey, Ali

2013-10-01

Electronic skin (e-skin) presents a network of mechanically flexible sensors that can conformally wrap irregular surfaces and spatially map and quantify various stimuli. Previous works on e-skin have focused on the optimization of pressure sensors interfaced with an electronic readout, whereas user interfaces based on a human-readable output were not explored. Here, we report the first user-interactive e-skin that not only spatially maps the applied pressure but also provides an instantaneous visual response through a built-in active-matrix organic light-emitting diode display with red, green and blue pixels. In this system, organic light-emitting diodes (OLEDs) are turned on locally where the surface is touched, and the intensity of the emitted light quantifies the magnitude of the applied pressure. This work represents a system-on-plastic demonstration where three distinct electronic components--thin-film transistor, pressure sensor and OLED arrays--are monolithically integrated over large areas on a single plastic substrate. The reported e-skin may find a wide range of applications in interactive input/control devices, smart wallpapers, robotics and medical/health monitoring devices.

Updates on the Transition-Edge Sensors and Multiplexed Readout for HOLMES

NASA Astrophysics Data System (ADS)

Puiu, A.; Becker, D.; Bennett, D.; Biasotti, M.; Borghesi, M.; Ceriale, V.; De Gerone, M.; Faverzani, M.; Ferri, E.; Fowler, J.; Gallucci, G.; Gard, J.; Hays-Wehle, J.; Hilton, G.; Giachero, A.; Mates, J.; Nucciotti, A.; Orlando, A.; Pessina, G.; Schmidt, D.; Swetz, D.; Ullom, J.; Vale, L.

2018-05-01

Measuring the neutrino mass is one of the most compelling issues in particle physics. HOLMES is an experiment for a direct measurement of the neutrino mass. HOLMES will perform a precise measurement of the end point of the electron capture decay spectrum of ^{163}Ho in order to extract information on the neutrino mass with a sensitivity as low as 1 eV. HOLMES, in its final configuration, will deploy a 1000-pixel array of low-temperature microcalorimeters: each calorimeter is made of an absorber, where the Ho atoms will be implanted, coupled to a transition-edge sensor (TES) thermometer. The detectors will be operated at the working temperature of 100 mK provided by a dilution refrigerator. In order to read out the 1000-detector array of HOLMES, a multiplexing system is necessary: the choice is to couple the transition-edge sensors to a multiplexed rf-SQUID. In this contribution we outline the progress made towards the final configuration of HOLMES regarding both the performances of the TES detectors and the characteristics of the multiplexing system.

An energy-efficient readout circuit for resonant sensors based on ring-down measurement

NASA Astrophysics Data System (ADS)

Zeng, Z.; Pertijs, M. A. P.; Karabacak, D. M.

2013-02-01

This paper presents an energy-efficient readout circuit for resonant sensors that operates based on a transient measurement method. The resonant sensor is driven at a frequency close to its resonance frequency by an excitation source that can be intermittently disconnected, causing the sensor to oscillate at its resonance frequency with exponentially decaying amplitude. By counting the zero crossings of this ring-down response, the interface circuit can detect the resonance frequency. In contrast with oscillator-based readout, the presented readout circuit is readily able to detect quality factor (Q) of the resonator from the envelope of the ring-down response, and can be used even in the presence of large parasitic capacitors. A prototype of the readout circuit has been integrated in 0.35 μm CMOS technology, and consumes only 36 μA from a 3.3 V supply during a measurement time of 2 ms. The resonance frequency and quality factor of a micro-machined SiN resonator obtained using this prototype are in good agreement with results obtained using impedance analysis. Furthermore, a clear transient response is observed to ethanol flow using the presented readout, demonstrating the use of this technique in sensing applications.

A study of timing properties of Silicon Photomultipliers

NASA Astrophysics Data System (ADS)

Avella, Paola; De Santo, Antonella; Lohstroh, Annika; Sajjad, Muhammad T.; Sellin, Paul J.

2012-12-01

Silicon Photomultipliers (SiPMs) are solid-state pixelated photodetectors. Lately these sensors have been investigated for Time of Flight Positron Emission Tomography (ToF-PET) applications, where very good coincidence time resolution of the order of hundreds of picoseconds imply spatial resolution of the order of cm in the image reconstruction. The very fast rise time typical of the avalanche discharge improves the time resolution, but can be limited by the readout electronics and the technology used to construct the device. In this work the parameters of the equivalent circuit of the device that directly affect the pulse shape, namely the quenching resistance and capacitance and the diode and parasitic capacitances, were calculated. The mean rise time obtained with different preamplifiers was also measured.

ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

NASA Technical Reports Server (NTRS)

Vasile, Stefan; Lipson, Jerold

2012-01-01

The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

A frequency-sensing readout using piezoelectric sensors for sensing of physiological signals.

PubMed

Buxi, Dilpreet; Redouté, Jean-Michel; Yuce, Mehmet Rasit

2014-01-01

Together with a charge or voltage amplifier, piezoelectric sensors are commonly used to pick up physiological vibrations from the body. As an alternative to chopper or auto-zero amplifiers, frequency sensing is known in literature to provide advantages of noise immunity, interfacing to digital readout systems as well as tunable range of sensing. A frequency-sensing readout circuit for sensing low voltage signals from piezoelectric sensors is successfully developed and tested in this work. The output voltage of a piezoelectric sensor is fed to a varactor, which is part of an Colpitts LC oscillator. The oscillation frequency is converted into a voltage using a phase locked loop. The circuit is compared to a reference design in terms of linearity, noise and transfer function. The readout has a input-referred noise voltage of 2.24μV/√Hz and consumes 15 mA at 5V supply. Arterial pulse wave signals and the cardiac vibrations from the chest are measured from one subject to show the proof of concept of the proposed readout. The results of this work are intended to contribute towards alternative low noise analog front end designs for piezoelectric sensors.

Fast Low-Cost Multiple Sensor Readout System

DOEpatents

Carter-Lewis, David; Krennich, Frank; Le Bohec, Stephane; Petry, Dirk; Sleege, Gary

2004-04-06

A low resolution data acquisition system is presented. The data acquisition system has a plurality of readout modules serially connected to a controller. Each readout module has a FPGA in communication with analog to digital (A/D) converters, which are connected to sensors. The A/D converter has eight bit or lower resolution. The FPGA detects when a command is addressed to it and commands the A/D converters to convert analog sensor data into digital data. The digital data is sent on a high speed serial communication bus to the controller. A graphical display is used in one embodiment to indicate if a sensor reading is outside of a predetermined range.

Spectral contents readout of birefringent sensor

NASA Technical Reports Server (NTRS)

Redner, Alex S.

1989-01-01

The technical objective of this research program was to develop a birefringent sensor, capable of measuring strain/stress up to 2000 F and a readout system based on Spectral Contents analysis. As a result of the research work, a data acquisition system was developed, capable of measuring strain birefringence in a sensor at 2000 F, with multi-point static and dynamic capabilities. The system uses a dedicated spectral analyzer for evaluation of stress-birefringence and a PC-based readout. Several sensor methods were evaluated. Fused silica was found most satisfactory. In the final evaluation, measurements were performed up to 2000 F and the system performance exceeded expectations.

High-Sensitivity X-ray Polarimetry with Amorphous Silicon Active-Matrix Pixel Proportional Counters

NASA Technical Reports Server (NTRS)

Black, J. K.; Deines-Jones, P.; Jahoda, K.; Ready, S. E.; Street, R. A.

2003-01-01

Photoelectric X-ray polarimeters based on pixel micropattern gas detectors (MPGDs) offer order-of-magnitude improvement in sensitivity over more traditional techniques based on X-ray scattering. This new technique places some of the most interesting astronomical observations within reach of even a small, dedicated mission. The most sensitive instrument would be a photoelectric polarimeter at the focus of 2 a very large mirror, such as the planned XEUS. Our efforts are focused on a smaller pathfinder mission, which would achieve its greatest sensitivity with large-area, low-background, collimated polarimeters. We have recently demonstrated a MPGD polarimeter using amorphous silicon thin-film transistor (TFT) readout suitable for the focal plane of an X-ray telescope. All the technologies used in the demonstration polarimeter are scalable to the areas required for a high-sensitivity collimated polarimeter. Leywords: X-ray polarimetry, particle tracking, proportional counter, GEM, pixel readout

Direct imaging detectors for electron microscopy

NASA Astrophysics Data System (ADS)

Faruqi, A. R.; McMullan, G.

2018-01-01

Electronic detectors used for imaging in electron microscopy are reviewed in this paper. Much of the detector technology is based on the developments in microelectronics, which have allowed the design of direct detectors with fine pixels, fast readout and which are sufficiently radiation hard for practical use. Detectors included in this review are hybrid pixel detectors, monolithic active pixel sensors based on CMOS technology and pnCCDs, which share one important feature: they are all direct imaging detectors, relying on directly converting energy in a semiconductor. Traditional methods of recording images in the electron microscope such as film and CCDs, are mentioned briefly along with a more detailed description of direct electronic detectors. Many applications benefit from the use of direct electron detectors and a few examples are mentioned in the text. In recent years one of the most dramatic advances in structural biology has been in the deployment of the new backthinned CMOS direct detectors to attain near-atomic resolution molecular structures with electron cryo-microscopy (cryo-EM). The development of direct detectors, along with a number of other parallel advances, has seen a very significant amount of new information being recorded in the images, which was not previously possible-and this forms the main emphasis of the review.

Characterization of Kilopixel TES detector arrays for PIPER

NASA Astrophysics Data System (ADS)

Datta, Rahul; Ade, Peter; Benford, Dominic; Bennett, Charles; Chuss, David; Costen, Nicholas; Coughlin, Kevin; Dotson, Jessie; Eimer, Joseph; Fixsen, Dale; Gandilo, Natalie; Halpern, Mark; Essinger-Hileman, Thomas; Hilton, Gene; Hinshaw, Gary; Irwin, Kent; Jhabvala, Christine; Kimball, Mark; Kogut, Al; Lazear, Justin; Lowe, Luke; Manos, George; McMahon, Jeff; Miller, Timothy; Mirel, Paul; Moseley, Samuel Harvey; Pawlyk, Samuel; Rodriguez, Samelys; Sharp, Elmer; Shirron, Peter; Staguhn, Johannes G.; Sullivan, Dan; Switzer, Eric; Taraschi, Peter; Tucker, Carole; Walts, Alexander; Wollack, Edward

2018-01-01

The Primordial Inflation Polarization ExploreR (PIPER) is a balloon-borne instrument optimized to measure the polarization of the Cosmic Microwave Background (CMB) at large angular scales. It will map 85% of the sky in four frequency bands centered at 200, 270, 350, and 600 GHz to characterize dust foregrounds and constrain the tensor-to-scalar ratio, r. The sky is imaged on to 32x40 pixel arrays of time-domain multiplexed Transition-Edge Sensor (TES) bolometers operating at a bath temperature of 100 mK to achieve background-limited sensitivity. Each kilopixel array is indium-bump-bonded to a 2D superconducting quantum interference device (SQUID) time-domain multiplexer (MUX) chip and read out by warm electronics. Each pixel measures total incident power over a frequency band defined by bandpass filters in front of the array, while polarization sensitivity is provided by the upstream Variable-delay Polarization Modulators (VPMs) and analyzer grids. We present measurements of the detector parameters from the laboratory characterization of the first kilopixel science array for PIPER including transition temperature, saturation power, thermal conductivity, time constant, and noise performance. We also describe the testing of the 2D MUX chips, optimization of the integrated readout parameters, and the overall pixel yield of the array. The first PIPER science flight is planned for June 2018 from Palestine, Texas.

High throughput reconfigurable data analysis system

NASA Technical Reports Server (NTRS)

Bearman, Greg (Inventor); Pelletier, Michael J. (Inventor); Seshadri, Suresh (Inventor); Pain, Bedabrata (Inventor)

2008-01-01

The present invention relates to a system and method for performing rapid and programmable analysis of data. The present invention relates to a reconfigurable detector comprising at least one array of a plurality of pixels, where each of the plurality of pixels can be selected to receive and read-out an input. The pixel array is divided into at least one pixel group for conducting a common predefined analysis. Each of the pixels has a programmable circuitry programmed with a dynamically configurable user-defined function to modify the input. The present detector also comprises a summing circuit designed to sum the modified input.

Design and test of data acquisition systems for the Medipix2 chip based on PC standard interfaces

NASA Astrophysics Data System (ADS)

Fanti, Viviana; Marzeddu, Roberto; Piredda, Giuseppina; Randaccio, Paolo

2005-07-01

We describe two readout systems for hybrid detectors using the Medipix2 single photon counting chip, developed within the Medipix Collaboration. The Medipix2 chip (256×256 pixels, 55 μm pitch) has an active area of about 2 cm 2 and is bump-bonded to a pixel semiconductor array of silicon or other semiconductor material. The readout systems we are developing are based on two widespread standard PC interfaces: parallel port and USB (Universal Serial Bus) version 1.1. The parallel port is the simplest PC interface even if slow and the USB is a serial bus interface present nowadays on all PCs and offering good performances.

Charged particle detection performances of CMOS pixel sensors produced in a 0.18 μm process with a high resistivity epitaxial layer

NASA Astrophysics Data System (ADS)

Senyukov, S.; Baudot, J.; Besson, A.; Claus, G.; Cousin, L.; Dorokhov, A.; Dulinski, W.; Goffe, M.; Hu-Guo, C.; Winter, M.

2013-12-01

The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50 μm thin CMOS Pixel Sensors (CPS) covering either the three innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35 μm CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJazz 0.18 μm CMOS process were studied with the help of the first prototype chip MIMOSA 32. The beam tests performed with negative pions of 120 GeV/c at the CERN-SPS allowed to measure a signal-to-noise ratio (SNR) for the non-irradiated chip in the range between 22 and 32 depending on the pixel design. The chip irradiated with the combined dose of 1 MRad and 1013neq /cm2 was observed to yield an SNR ranging between 11 and 23 for coolant temperatures varying from 15 °C to 30 °C. These SNR values were measured to result in particle detection efficiencies above 99.5% and 98% before and after irradiation, respectively. These satisfactory results allow to validate the TowerJazz 0.18 μm CMOS process for the ALICE ITS upgrade.

PantherPix hybrid pixel γ-ray detector for radio-therapeutic applications

NASA Astrophysics Data System (ADS)

Neue, G.; Benka, T.; Havránek, M.; Hejtmánek, M.; Janoška, Z.; Kafka, V.; Korchak, O.; Lednický, D.; Marčišovská, M.; Marčišovský, M.; Popule, J.; Şmarhák, J.; Şvihra, P.; Tomášek, L.; Vrba, V.; Konček, O.; Semmler, M.

2018-02-01

This work focuses on the design of a semiconductor pixelated γ-ray camera with a pixel size of 1 mm2. The cost of semiconductor manufacturing is mainly driven by economies of scale, which makes silicon the cheapest semiconductor material due to its widespread utilization. The energy of γ-photons used in radiation therapy are in a range, in which the dominant interaction mechanism is Compton scattering in every conceivable sensor material. Since the Compton scattering cross section is linearly dependent upon Z, it is less rewarding to utilize high Z sensor materials, than it is in the case of X-ray detectors (X-rays interact also via the photoelectric effect whose cross section scales proportional to Zn, where n is ≈ 4,5). For the stated reasons it was decided to use the low Z material silicon (Z = 14) despite its worse detection efficiency. The proposed detector is designed as a portal detector to be used in radiation cancer therapy. The purpose of the detector is to ensure correct patient alignment, spatial dose monitoring and to provide the feedback necessary for an emergency shutdown should the spatial dose rate profile deviate from the treatment plan. Radiation therapy equipment is complex and thus failure prone and the consequences of malfunction are often life threatening. High spatial resolution and high detection efficiency are not a high design priority. The detector design priorities are focused up on radiation hardness, robustness and the ability to cover a large area cost efficiently. The quintessential idea of the PanterPix detector exploits the relaxed spatial resolution requirement to achieve the stated goals. The detector is composed of submodules, each submodule consisting of a Si sensor with an array of fully depleted detection diodes and 8 miniature custom design readout ASICs collecting and measuring the minuscule charge packets generated due to ionization in the PN junctions.

The Belle II DEPFET pixel detector

NASA Astrophysics Data System (ADS)

Moser, Hans-Günther; DEPFET Collaboration

2016-09-01

The Belle II experiment at KEK (Tsukuba, Japan) will explore heavy flavour physics (B, charm and tau) at the starting of 2018 with unprecedented precision. Charged particles are tracked by a two-layer DEPFET pixel device (PXD), a four-layer silicon strip detector (SVD) and the central drift chamber (CDC). The PXD will consist of two layers at radii of 14 mm and 22 mm with 8 and 12 ladders, respectively. The pixel sizes will vary, between 50 μm×(55-60) μm in the first layer and between 50 μm×(70-85) μm in the second layer, to optimize the charge sharing efficiency. These innermost layers have to cope with high background occupancy, high radiation and must have minimal material to reduce multiple scattering. These challenges are met using the DEPFET technology. Each pixel is a FET integrated on a fully depleted silicon bulk. The signal charge collected in the 'internal gate' modulates the FET current resulting in a first stage amplification and therefore very low noise. This allows very thin sensors (75 μm) reducing the overall material budget of the detector (0.21% X0). Four fold multiplexing of the column parallel readout allows read out a full frame of the pixel matrix in only 20 μs while keeping the power consumption low enough for air cooling. Only the active electronics outside the detector acceptance has to be cooled actively with a two phase CO2 system. Furthermore the DEPFET technology offers the unique feature of an electronic shutter which allows the detector to operate efficiently in the continuous injection mode of superKEKB.

A statistical evaluation of effective time constants of random telegraph noise with various operation timings of in-pixel source follower transistors

NASA Astrophysics Data System (ADS)

Yonezawa, A.; Kuroda, R.; Teramoto, A.; Obara, T.; Sugawa, S.

2014-03-01

We evaluated effective time constants of random telegraph noise (RTN) with various operation timings of in-pixel source follower transistors statistically, and discuss the dependency of RTN time constants on the duty ratio (on/off ratio) of MOSFET which is controlled by the gate to source voltage (VGS). Under a general readout operation of CMOS image sensor (CIS), the row selected pixel-source followers (SFs) turn on and not selected pixel-SFs operate at different bias conditions depending on the select switch position; when select switch locate in between the SF driver and column output line, SF drivers nearly turn off. The duty ratio and cyclic period of selected time of SF driver depends on the operation timing determined by the column read out sequence. By changing the duty ratio from 1 to 7.6 x 10-3, time constant ratio of RTN (time to capture <τc<)/(time to emission <τe<) of a part of MOSFETs increased while RTN amplitudes were almost the same regardless of the duty ratio. In these MOSFETs, <τc< increased and the majority of <τe< decreased and the minority of <τe< increased by decreasing the duty ratio. The same tendencies of behaviors of <τc< and <τe< were obtained when VGS was decreased. This indicates that the effective <τc< and <τe< converge to those under off state as duty ratio decreases. These results are important for the noise reduction, detection and analysis of in pixel-SF with RTN.

DOE Office of Scientific and Technical Information (OSTI.GOV)

DE GERONIMO,G.; CHEN, W.; FRIED, J.

We present an application specific integrated circuit (ASIC) for high-resolution x-ray spectrometers. The ASIC is designed to read out signals from a pixelated silicon drift detector (SDD). Each hexagonal pixel has an area of 15 mmz and an anode capacitance of less than 100 fF. There is no integrated Field Effect transistor (FET) in the pixel, rather, the readout is done by wirebonding the anodes to the inputs of the ASIC. The ASIC provides 14 channels of low-noise charge amplification, high-order shaping with baseline stabilization, and peak detection with analog memory. The readout is sparse and based on low voltagemore » differential signaling. An interposer provides all the interconnections required to bias and operate the system. The channel dissipates 1.6 mW. The complete 14-pixel unit covers an area of 210 mm{sup 2}, dissipates 12 mW cm{sup -2}, and can be tiled to cover an arbitrarily large detection area. We measured a preliminary resolution of 172 eV at -35 C on the 6 keV peak of a {sup 55}Fe source.« less

Prototypes and system test stands for the Phase 1 upgrade of the CMS pixel detector

DOE PAGES

Hasegawa, S.

2016-04-23

The CMS pixel phase-1 upgrade project replaces the current pixel detector with an upgraded system with faster readout electronics during the extended year-end technical stop of 2016/2017. New electronics prototypes for the system have been developed, and tests in a realistic environment for a comprehensive evaluation are needed. A full readout test stand with either the same hardware as used in the current CMS pixel detector or the latest prototypes of upgrade electronics has been built. The setup enables the observation and investigation of a jitter increase in the data line associated with trigger rate increases. This effect is duemore » to the way in which the clock and trigger distribution is implemented in CMS. A new prototype of the electronics with a PLL based on a voltage controlled quartz crystal oscillator (QPLL), which works as jitter filter, in the clock distribution path was produced. With the test stand, it was confirmed that the jitter increase is not seen with the prototype, and also good performance was confirmed at the expected detector operation temperature ($-$20 °C).« less

Timing Results Using an FPGA-Based TDC with Large Arrays of 144 SiPMs

NASA Astrophysics Data System (ADS)

Aguilar, A.; González, A. J.; Torres, J.; García-Olcina, R.; Martos, J.; Soret, J.; Conde, P.; Hernández, L.; Sánchez, F.; Benlloch, J. M.

2015-02-01

Silicon photomultipliers (SiPMs) have become an alternative to traditional tubes due to several features. However, their implementation to form large arrays is still a challenge especially due to their relatively high intrinsic noise, depending on the chosen readout. In this contribution, two modules composed of 12 ×12 SiPMs with an area of roughly 50 mm×50 mm are used in coincidence. Coincidence resolving time (CRT) results with a field-programmable gate array, in combination with a time to digital converter, are shown as a function of both the sensor bias voltage and the digitizer threshold. The dependence of the CRT on the sensor matrix temperature, the amount of SiPM active area and the crystal type is also analyzed. Measurements carried out with a crystal array of 2 mm pixel size and 10 mm height have shown time resolutions for the entire 288 SiPM two-detector set-up as good as 800 ps full width at half maximum (FWHM).

BAE Systems' 17μm LWIR camera core for civil, commercial, and military applications

NASA Astrophysics Data System (ADS)

Lee, Jeffrey; Rodriguez, Christian; Blackwell, Richard

2013-06-01

Seventeen (17) µm pixel Long Wave Infrared (LWIR) Sensors based on vanadium oxide (VOx) micro-bolometers have been in full rate production at BAE Systems' Night Vision Sensors facility in Lexington, MA for the past five years.[1] We introduce here a commercial camera core product, the Airia-MTM imaging module, in a VGA format that reads out in 30 and 60Hz progressive modes. The camera core is architected to conserve power with all digital interfaces from the readout integrated circuit through video output. The architecture enables a variety of input/output interfaces including Camera Link, USB 2.0, micro-display drivers and optional RS-170 analog output supporting legacy systems. The modular board architecture of the electronics facilitates hardware upgrades allow us to capitalize on the latest high performance low power electronics developed for the mobile phones. Software and firmware is field upgradeable through a USB 2.0 port. The USB port also gives users access to up to 100 digitally stored (lossless) images.

Amorphous In–Ga–Zn–O thin-film transistor active pixel sensor x-ray imager for digital breast tomosynthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Chumin; Kanicki, Jerzy, E-mail: kanicki@eecs.umich.edu

Purpose: The breast cancer detection rate for digital breast tomosynthesis (DBT) is limited by the x-ray image quality. The limiting Nyquist frequency for current DBT systems is around 5 lp/mm, while the fine image details contained in the high spatial frequency region (>5 lp/mm) are lost. Also today the tomosynthesis patient dose is high (0.67–3.52 mGy). To address current issues, in this paper, for the first time, a high-resolution low-dose organic photodetector/amorphous In–Ga–Zn–O thin-film transistor (a-IGZO TFT) active pixel sensor (APS) x-ray imager is proposed for next generation DBT systems. Methods: The indirect x-ray detector is based on a combination of a novelmore » low-cost organic photodiode (OPD) and a cesium iodide-based (CsI:Tl) scintillator. The proposed APS x-ray imager overcomes the difficulty of weak signal detection, when small pixel size and low exposure conditions are used, by an on-pixel signal amplification with a significant charge gain. The electrical performance of a-IGZO TFT APS pixel circuit is investigated by SPICE simulation using modified Rensselaer Polytechnic Institute amorphous silicon (a-Si:H) TFT model. Finally, the noise, detective quantum efficiency (DQE), and resolvability of the complete system are modeled using the cascaded system formalism. Results: The result demonstrates that a large charge gain of 31–122 is achieved for the proposed high-mobility (5–20 cm{sup 2}/V s) amorphous metal-oxide TFT APS. The charge gain is sufficient to eliminate the TFT thermal noise, flicker noise as well as the external readout circuit noise. Moreover, the low TFT (<10{sup −13} A) and OPD (<10{sup −8} A/cm{sup 2}) leakage currents can further reduce the APS noise. Cascaded system analysis shows that the proposed APS imager with a 75 μm pixel pitch can effectively resolve the Nyquist frequency of 6.67 lp/mm, which can be further improved to ∼10 lp/mm if the pixel pitch is reduced to 50 μm. Moreover, the detector entrance exposure per projection can be reduced from 1 to 0.3 mR without a significant reduction of DQE. The signal-to-noise ratio of the a-IGZO APS imager under 0.3 mR x-ray exposure is comparable to that of a-Si:H passive pixel sensor imager under 1 mR, indicating good image quality under low dose. A threefold reduction of current tomosynthesis dose is expected if proposed technology is combined with an advanced DBT image reconstruction method. Conclusions: The proposed a-IGZO APS x-ray imager with a pixel pitch <75 μm is capable to achieve a high spatial frequency (>6.67 lp/mm) and a low dose (<0.4 mGy) in next generation DBT systems.« less

Amorphous In-Ga-Zn-O thin-film transistor active pixel sensor x-ray imager for digital breast tomosynthesis.

PubMed

Zhao, Chumin; Kanicki, Jerzy

2014-09-01

The breast cancer detection rate for digital breast tomosynthesis (DBT) is limited by the x-ray image quality. The limiting Nyquist frequency for current DBT systems is around 5 lp/mm, while the fine image details contained in the high spatial frequency region (>5 lp/mm) are lost. Also today the tomosynthesis patient dose is high (0.67-3.52 mGy). To address current issues, in this paper, for the first time, a high-resolution low-dose organic photodetector/amorphous In-Ga-Zn-O thin-film transistor (a-IGZO TFT) active pixel sensor (APS) x-ray imager is proposed for next generation DBT systems. The indirect x-ray detector is based on a combination of a novel low-cost organic photodiode (OPD) and a cesium iodide-based (CsI:Tl) scintillator. The proposed APS x-ray imager overcomes the difficulty of weak signal detection, when small pixel size and low exposure conditions are used, by an on-pixel signal amplification with a significant charge gain. The electrical performance of a-IGZO TFT APS pixel circuit is investigated by SPICE simulation using modified Rensselaer Polytechnic Institute amorphous silicon (a-Si:H) TFT model. Finally, the noise, detective quantum efficiency (DQE), and resolvability of the complete system are modeled using the cascaded system formalism. The result demonstrates that a large charge gain of 31-122 is achieved for the proposed high-mobility (5-20 cm2/V s) amorphous metal-oxide TFT APS. The charge gain is sufficient to eliminate the TFT thermal noise, flicker noise as well as the external readout circuit noise. Moreover, the low TFT (<10(-13) A) and OPD (<10(-8) A/cm2) leakage currents can further reduce the APS noise. Cascaded system analysis shows that the proposed APS imager with a 75 μm pixel pitch can effectively resolve the Nyquist frequency of 6.67 lp/mm, which can be further improved to ∼10 lp/mm if the pixel pitch is reduced to 50 μm. Moreover, the detector entrance exposure per projection can be reduced from 1 to 0.3 mR without a significant reduction of DQE. The signal-to-noise ratio of the a-IGZO APS imager under 0.3 mR x-ray exposure is comparable to that of a-Si:H passive pixel sensor imager under 1 mR, indicating good image quality under low dose. A threefold reduction of current tomosynthesis dose is expected if proposed technology is combined with an advanced DBT image reconstruction method. The proposed a-IGZO APS x-ray imager with a pixel pitch<75 μm is capable to achieve a high spatial frequency (>6.67 lp/mm) and a low dose (<0.4 mGy) in next generation DBT systems.

Evaluation of slim-edge, multi-guard, and punch-through-protection structures before and after proton irradiation

NASA Astrophysics Data System (ADS)

Mitsui, S.; Unno, Y.; Ikegami, Y.; Takubo, Y.; Terada, S.; Hara, K.; Takahashi, Y.; Jinnouchi, O.; Nagai, R.; Kishida, T.; Yorita, K.; Hanagaki, K.; Takashima, R.; Kamada, S.; Yamamura, K.

2013-01-01

Planar geometry silicon pixel and strip sensors for the high luminosity upgrade of the LHC (HL-LHC) require a high bias voltage of 1000 V in order to withstand a radiation damage caused by particle fluences of 1×1016 1 MeV neq/cm2 and 1×1015 1 MeV neq/cm2 for pixel and strip detectors, respectively. In order to minimize the inactive edge space that can withstand a bias voltage of 1000 V, edge regions susceptible to microdischarge (MD) should be carefully optimized. We fabricated diodes with various edge distances (slim-edge diodes) and with 1-3 multiple guard rings (multi-guard diodes). AC coupling insulators of strip sensors are vulnerable to sudden heavy charge deposition, such as an accidental beam splash, which may destroy the readout AC capacitors. Thus various types of punch-through-protection (PTP) structures were implemented in order to find the most effective structure to protect against heavy charge deposition. These samples were irradiated with 70 MeV protons at fluences of 5×1012 1 MeV neq/cm2-1×1016 1 MeV neq/cm2. Their performances were evaluated before and after irradiation in terms of an onset voltage of the MD, a turn-on voltage of the PTP, and PTP saturation resistance.

Early Results from the First Year of Observations by the Atacama B-mode Search (ABS)

NASA Astrophysics Data System (ADS)

Simon, Sara M.; ABS Collaboration

2013-06-01

The Atacama B-mode Search (ABS) instrument, which began observation in February of 2012, is a crossed-Dragone telescope located at an elevation of 5100 m in the Atacama Desert in Chile. The primary scientific goal of ABS is to measure the B-mode polarization spectrum of the Cosmic Microwave Background (CMB) from multipole moments of about l=50 to l=500, a range that includes the primordial B-mode peak. Unlike most current polarization experiments, ABS features a cryogenic telescope and a warm half-wave plate used to modulate the polarization of the incoming light. The ABS focal plane array consists of 240 pixels designed for observation at 150 GHz by the TRUCE collaboration. Each pixel has its own individual, single-moded feedhorn and contains two transition-edge sensor (TES) bolometers sensitive to orthogonal polarizations. The detectors are read out using time domain multiplexing so that the thermal loading of the readout electronics does not heat the focal plane. I will present early results from the first year of ABS data.

LSI-based amperometric sensor for bio-imaging and multi-point biosensing.

PubMed

Inoue, Kumi Y; Matsudaira, Masahki; Kubo, Reyushi; Nakano, Masanori; Yoshida, Shinya; Matsuzaki, Sakae; Suda, Atsushi; Kunikata, Ryota; Kimura, Tatsuo; Tsurumi, Ryota; Shioya, Toshihito; Ino, Kosuke; Shiku, Hitoshi; Satoh, Shiro; Esashi, Masayoshi; Matsue, Tomokazu

2012-09-21

We have developed an LSI-based amperometric sensor called "Bio-LSI" with 400 measurement points as a platform for electrochemical bio-imaging and multi-point biosensing. The system is comprised of a 10.4 mm × 10.4 mm CMOS sensor chip with 20 × 20 unit cells, an external circuit box, a control unit for data acquisition, and a DC power box. Each unit cell of the chip contains an operational amplifier with a switched-capacitor type I-V converter for in-pixel signal amplification. We successfully realized a wide dynamic range from ±1 pA to ±100 nA with a well-organized circuit design and operating software. In particular, in-pixel signal amplification and an original program to control the signal read-out contribute to the lower detection limit and wide detection range of Bio-LSI. The spacial resolution is 250 μm and the temporal resolution is 18-125 ms/400 points, which depends on the desired current detection range. The coefficient of variance of the current for 400 points is within 5%. We also demonstrated the real-time imaging of a biological molecule using Bio-LSI. The LSI coated with an Os-HRP film was successfully applied to the monitoring of the changes of hydrogen peroxide concentration in a flow. The Os-HRP-coated LSI was spotted with glucose oxidase and used for bioelectrochemical imaging of the glucose oxidase (GOx)-catalyzed oxidation of glucose. Bio-LSI is a promising platform for a wide range of analytical fields, including diagnostics, environmental measurements and basic biochemistry.

Large Format, Background Limited Arrays of Kinetic Inductance Detectors for Sub-mm Astronomy

NASA Astrophysics Data System (ADS)

Baselmans, Jochem

2018-01-01

We present the development of large format imaging arrays for sub-mm astronomy based upon microwave Kinetic Inductance detectors and their read-out. In particular we focus on the arrays developed for the A-MKID instrument for the APEX telescope. AMKID contains 2 focal plane arrays, covering a field of view of 15?x15?. One array is optimized for the 350 GHz telluric window, the other for the 850 GHz window. Both arrays are constructed from four 61 x 61 mm detector chips, each of which contains up to 3400 detectors and up to 880 detectors per readout line. The detectors are lens antenna coupled MKIDs made from NbTiN and Aluminium that reach photon noise limited sensitivity in combination with a high optical coupling. The lens-antenna radiation coupling enables the use of 4K optics and Lyot stop due to the intrinsic directivity of the detector beam, allowing a simple cryogenic architecture. We discuss the pixel design and verification, detector packaging and the array performance. We will also discuss the readout system, which is a combination of a digital and analog back-end that can read-out up to 4000 pixels simultaneously using frequency division multiplexing.

YARR - A PCIe based Readout Concept for Current and Future ATLAS Pixel Modules

NASA Astrophysics Data System (ADS)

Heim, Timon

2017-10-01

The Yet Another Rapid Readout (YARR) system is a DAQ system designed for the readout of current generation ATLAS Pixel FE-I4 and next generation chips. It utilises a commercial-off-the-shelf PCIe FPGA card as a reconfigurable I/O interface, which acts as a simple gateway to pipe all data from the Pixel modules via the high speed PCIe connection into the host system’s memory. Relying on modern CPU architectures, which enables the usage of parallelised processing in threads and commercial high speed interfaces in everyday computers, it is possible to perform all processing on a software level in the host CPU. Although FPGAs are very powerful at parallel signal processing their firmware is hard to maintain and constrained by their connected hardware. Software, on the other hand, is very portable and upgraded frequently with new features coming at no cost. A DAQ concept which does not rely on the underlying hardware for acceleration also eases the transition from prototyping in the laboratory to the full scale implementation in the experiment. The overall concept and data flow will be outlined, as well as the challenges and possible bottlenecks which can be encountered when moving the processing from hardware to software.

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang; Wu, Chyan-Chyi

2011-01-01

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process was investigated. The structure of the ammonia sensor is composed of a sensitive film and polysilicon electrodes. The ammonia sensor requires a post-process to etch the sacrificial layer, and to coat the sensitive film on the polysilicon electrodes. The sensitive film that is prepared by a hydrothermal method is made of zinc oxide. The sensor resistance changes when the sensitive film adsorbs or desorbs ammonia gas. The readout circuit is used to convert the sensor resistance into the voltage output. Experiments show that the ammonia sensor has a sensitivity of about 1.5 mV/ppm at room temperature.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jungmann-Smith, J. H., E-mail: jsmith@magnet.fsu.edu; Bergamaschi, A.; Brückner, M.

JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10{sup 4} photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm{sup 2} pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 ×more » 4 chips cover an area of about 4 × 8 cm{sup 2}. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.« less

A high-speed pnCCD detector system for optical applications

NASA Astrophysics Data System (ADS)

Hartmann, R.; Buttler, W.; Gorke, H.; Herrmann, S.; Holl, P.; Meidinger, N.; Soltau, H.; Strüder, L.

2006-11-01

Measurements of a frame-store pnCCD detector system, optimized for high-speed applications in the optical and near infrared (NIR) region, will be presented. The device with an image area of 13.5 mm by 13.5 mm and a pixelsize of 51 μm by 51 μm exhibits a readout time faster than 1100 frames per second with an overall electronic noise contribution of less than three electrons. Variable operation modes of the detector system allow for even higher readout speeds by a pixel binning in transfer direction or, at slightly slower readout speeds, a further improvement in noise performance. We will also present the concept of a data acquisition system being able to handle pixel rates of more than 75 megapixel per second. The application of an anti-reflective coating on the ultra-thin entrance window of the back illuminated detector together with the large sensitive volume ensures a high and uniform detection efficiency from the ultra violet to the NIR.

Development of HgCdTe large format MBE arrays and noise-free high speed MOVPE EAPD arrays for ground based NIR astronomy

NASA Astrophysics Data System (ADS)

Finger, G.; Baker, I.; Downing, M.; Alvarez, D.; Ives, D.; Mehrgan, L.; Meyer, M.; Stegmeier, J.; Weller, H. J.

2017-11-01

Large format near infrared HgCdTe 2Kx2K and 4Kx4K MBE arrays have reached a level of maturity which meets most of the specifications required for near infrared (NIR) astronomy. The only remaining problem is the persistence effect which is device specific and not yet fully under control. For ground based multi-object spectroscopy on 40 meter class telescopes larger pixels would be advantageous. For high speed near infrared fringe tracking and wavefront sensing the only way to overcome the CMOS noise barrier is the amplification of the photoelectron signal inside the infrared pixel by means of the avalanche gain. A readout chip for a 320x256 pixel HgCdTe eAPD array will be presented which has 32 parallel video outputs being arranged in such a way that the full multiplex advantage is also available for small sub-windows. In combination with the high APD gain this allows reducing the readout noise to the subelectron level by applying nondestructive readout schemes with subpixel sampling. Arrays grown by MOVPE achieve subelectron readout noise and operate with superb cosmetic quality at high APD gain. Efforts are made to reduce the dark current of those arrays to make this technology also available for large format focal planes of NIR instruments offering noise free detectors for deep exposures. The dark current of the latest MOVPE eAPD arrays is already at a level adequate for noiseless broad and narrow band imaging in scientific instruments.

Characterization of multiport solid state imagers at megahertz data rates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yates, G.J.; Pena, C.R.; Turko, B.T.

1994-08-01

Test results obtained from two recently developed multiport Charge-Coupled Devices (CCDs) operated at pixel rates in the 10-to-100 MHz range will be presented . The CCDs were evaluated in Los Alamos National Laboratory`s High Speed Solid State Imager Test Station (HSTS) which features PC-based programmable clock waveform generation (Tektronix DAS 9200) and synchronously clocked Digital Sampling Oscilloscopes (DSOs) (LeCroy 9424/9314 series) for CCD pixel data acquisition, analysis and storage. The HSTS also provided special designed optical pinhole array test patterns in the 5-to-50 micron diameter range for use with Xenon Strobe and pulsed laser light sources to simultaneously provide multiplemore » single-pixel illumination patterns to study CCD point-spread-function (PSF) and pixel smear characteristics. The two CCDs tested, EEV model CCD-13 and EG&G Reticon model HSO512J, are both 512 {times} 512 pixel arrays with eight (8) and sixteen (16) video output ports respectively. Both devices are generically Frame Transfer CCDs (FT CCDs) designed for parallel bi-directional vertical readout to augment their multiport design for increased pixel rates over common single port serial readout architecture. Although both CCDs were tested similarly, differences in their designs precluded normalization or any direct comparisons of test results. Rate dependent parameters investigated include S/N, PSF, and MTF. The performance observed for the two imagers at various pixel rates from selected typical output ports is discussed.« less

Small-angle solution scattering using the mixed-mode pixel array detector.

PubMed

Koerner, Lucas J; Gillilan, Richard E; Green, Katherine S; Wang, Suntao; Gruner, Sol M

2011-03-01

Solution small-angle X-ray scattering (SAXS) measurements were obtained using a 128 × 128 pixel X-ray mixed-mode pixel array detector (MMPAD) with an 860 µs readout time. The MMPAD offers advantages for SAXS experiments: a pixel full-well of >2 × 10(7) 10 keV X-rays, a maximum flux rate of 10(8) X-rays pixel(-1) s(-1), and a sub-pixel point-spread function. Data from the MMPAD were quantitatively compared with data from a charge-coupled device (CCD) fiber-optically coupled to a phosphor screen. MMPAD solution SAXS data from lysozyme solutions were of equal or better quality than data captured by the CCD. The read-noise (normalized by pixel area) of the MMPAD was less than that of the CCD by an average factor of 3.0. Short sample-to-detector distances were required owing to the small MMPAD area (19.2 mm × 19.2 mm), and were revealed to be advantageous with respect to detector read-noise. As predicted by the Shannon sampling theory and confirmed by the acquisition of lysozyme solution SAXS curves, the MMPAD at short distances is capable of sufficiently sampling a solution SAXS curve for protein shape analysis. The readout speed of the MMPAD was demonstrated by continuously monitoring lysozyme sample evolution as radiation damage accumulated. These experiments prove that a small suitably configured MMPAD is appropriate for time-resolved solution scattering measurements.

Fast Imaging Detector Readout Circuits with In-Pixel ADCs for Fourier Transform Imaging Spectrometers

NASA Technical Reports Server (NTRS)

Rider, D.; Blavier, J-F.; Cunningham, T.; Hancock, B.; Key, R.; Pannell, Z.; Sander, S.; Seshadri, S.; Sun, C.; Wrigley, C.

2011-01-01

Focal plane arrays (FPAs) with high frame rates and many pixels benefit several upcoming Earth science missions including GEO-CAPE, GACM, and ACE by enabling broader spatial coverage and higher spectral resolution. FPAs for the PanFTS, a high spatial resolution Fourier transform spectrometer and a candidate instrument for the GEO-CAPE mission are the focus of the developments reported here, but this FPA technology has the potential to enable a variety of future measurements and instruments. The ESTO ACT Program funded the developed of a fast readout integrated circuit (ROIC) based on an innovative in-pixel analog-to-digital converter (ADC). The 128 X 128 pixel ROIC features 60 ?m pixels, a 14-bit ADC in each pixel and operates at a continuous frame rate of 14 kHz consuming only 1.1 W of power. The ROIC outputs digitized data completely eliminating the bulky, power consuming signal chains needed by conventional FPAs. The 128 X 128 pixel ROIC has been fabricated in CMOS and tested at the Jet Propulsion Laboratory. The current version is designed to be hybridized with PIN photodiode arrays via indium bump bonding for light detection in the visible and ultraviolet spectral regions. However, the ROIC design incorporates a small photodiode in each cell to permit detailed characterization of the ROICperformance without the need for hybridization. We will describe the essential features of the ROIC design and present results of ROIC performance measurements.

Development and characterization of high-resolution neutron pixel detectors based on Timepix read-out chips

NASA Astrophysics Data System (ADS)

Krejci, F.; Zemlicka, J.; Jakubek, J.; Dudak, J.; Vavrik, D.; Köster, U.; Atkins, D.; Kaestner, A.; Soltes, J.; Viererbl, L.; Vacik, J.; Tomandl, I.

2016-12-01

Using a suitable isotope such as 6Li and 10B semiconductor hybrid pixel detectors can be successfully adapted for position sensitive detection of thermal and cold neutrons via conversion into energetic light ions. The adapted devices then typically provides spatial resolution at the level comparable to the pixel pitch (55 μm) and sensitive area of about few cm2. In this contribution, we describe further progress in neutron imaging performance based on the development of a large-area hybrid pixel detector providing practically continuous neutron sensitive area of 71 × 57 mm2. The measurements characterising the detector performance at the cold neutron imaging instrument ICON at PSI and high-flux imaging beam-line Neutrograph at ILL are presented. At both facilities, high-resolution high-contrast neutron radiography with the newly developed detector has been successfully applied for objects which imaging were previously difficult with hybrid pixel technology (such as various composite materials, objects of cultural heritage etc.). Further, a significant improvement in the spatial resolution of neutron radiography with hybrid semiconductor pixel detector based on the fast read-out Timepix-based detector is presented. The system is equipped with a thin planar 6LiF convertor operated effectively in the event-by-event mode enabling position sensitive detection with spatial resolution better than 10 μm.

A Reconfigurable Readout Integrated Circuit for Heterogeneous Display-Based Multi-Sensor Systems

PubMed Central

Park, Kyeonghwan; Kim, Seung Mok; Eom, Won-Jin; Kim, Jae Joon

2017-01-01

This paper presents a reconfigurable multi-sensor interface and its readout integrated circuit (ROIC) for display-based multi-sensor systems, which builds up multi-sensor functions by utilizing touch screen panels. In addition to inherent touch detection, physiological and environmental sensor interfaces are incorporated. The reconfigurable feature is effectively implemented by proposing two basis readout topologies of amplifier-based and oscillator-based circuits. For noise-immune design against various noises from inherent human-touch operations, an alternate-sampling error-correction scheme is proposed and integrated inside the ROIC, achieving a 12-bit resolution of successive approximation register (SAR) of analog-to-digital conversion without additional calibrations. A ROIC prototype that includes the whole proposed functions and data converters was fabricated in a 0.18 μm complementary metal oxide semiconductor (CMOS) process, and its feasibility was experimentally verified to support multiple heterogeneous sensing functions of touch, electrocardiogram, body impedance, and environmental sensors. PMID:28368355

A Reconfigurable Readout Integrated Circuit for Heterogeneous Display-Based Multi-Sensor Systems.

PubMed

Park, Kyeonghwan; Kim, Seung Mok; Eom, Won-Jin; Kim, Jae Joon

2017-04-03

This paper presents a reconfigurable multi-sensor interface and its readout integrated circuit (ROIC) for display-based multi-sensor systems, which builds up multi-sensor functions by utilizing touch screen panels. In addition to inherent touch detection, physiological and environmental sensor interfaces are incorporated. The reconfigurable feature is effectively implemented by proposing two basis readout topologies of amplifier-based and oscillator-based circuits. For noise-immune design against various noises from inherent human-touch operations, an alternate-sampling error-correction scheme is proposed and integrated inside the ROIC, achieving a 12-bit resolution of successive approximation register (SAR) of analog-to-digital conversion without additional calibrations. A ROIC prototype that includes the whole proposed functions and data converters was fabricated in a 0.18 μm complementary metal oxide semiconductor (CMOS) process, and its feasibility was experimentally verified to support multiple heterogeneous sensing functions of touch, electrocardiogram, body impedance, and environmental sensors.

Crosstalk-free operation of multielement superconducting nanowire single-photon detector array integrated with single-flux-quantum circuit in a 0.1 W Gifford-McMahon cryocooler.

PubMed

Yamashita, Taro; Miki, Shigehito; Terai, Hirotaka; Makise, Kazumasa; Wang, Zhen

2012-07-15

We demonstrate the successful operation of a multielement superconducting nanowire single-photon detector (SSPD) array integrated with a single-flux-quantum (SFQ) readout circuit in a compact 0.1 W Gifford-McMahon cryocooler. A time-resolved readout technique, where output signals from each element enter the SFQ readout circuit with finite time intervals, revealed crosstalk-free operation of the four-element SSPD array connected with the SFQ readout circuit. The timing jitter and the system detection efficiency were measured to be 50 ps and 11.4%, respectively, which were comparable to the performance of practical single-pixel SSPD systems.

a Novel Technique for Precision Geometric Correction of Jitter Distortion for the Europa Imaging System and Other Rolling-Shutter Cameras

NASA Astrophysics Data System (ADS)

Kirk, R. L.; Shepherd, M.; Sides, S. C.

2018-04-01

We use simulated images to demonstrate a novel technique for mitigating geometric distortions caused by platform motion ("jitter") as two-dimensional image sensors are exposed and read out line by line ("rolling shutter"). The results indicate that the Europa Imaging System (EIS) on NASA's Europa Clipper can likely meet its scientific goals requiring 0.1-pixel precision. We are therefore adapting the software used to demonstrate and test rolling shutter jitter correction to become part of the standard processing pipeline for EIS. The correction method will also apply to other rolling-shutter cameras, provided they have the operational flexibility to read out selected "check lines" at chosen times during the systematic readout of the frame area.

Recent advances in superconducting nanowire single photon detectors for single-photon imaging

NASA Astrophysics Data System (ADS)

Verma, V. B.; Allman, M. S.; Stevens, M.; Gerrits, T.; Horansky, R. D.; Lita, A. E.; Marsili, F.; Beyer, A.; Shaw, M. D.; Stern, J. A.; Mirin, R. P.; Nam, S. W.

2016-05-01

We demonstrate a 64-pixel free-space-coupled array of superconducting nanowire single photon detectors optimized for high detection efficiency in the near-infrared range. An integrated, readily scalable, multiplexed readout scheme is employed to reduce the number of readout lines to 16. The cryogenic, optical, and electronic packaging to read out the array, as well as characterization measurements are discussed.

SPIDR, a general-purpose readout system for pixel ASICs

NASA Astrophysics Data System (ADS)

van der Heijden, B.; Visser, J.; van Beuzekom, M.; Boterenbrood, H.; Kulis, S.; Munneke, B.; Schreuder, F.

2017-02-01

The SPIDR (Speedy PIxel Detector Readout) system is a flexible general-purpose readout platform that can be easily adapted to test and characterize new and existing detector readout ASICs. It is originally designed for the readout of pixel ASICs from the Medipix/Timepix family, but other types of ASICs or front-end circuits can be read out as well. The SPIDR system consists of an FPGA board with memory and various communication interfaces, FPGA firmware, CPU subsystem and an API library on the PC . The FPGA firmware can be adapted to read out other ASICs by re-using IP blocks. The available IP blocks include a UDP packet builder, 1 and 10 Gigabit Ethernet MAC's and a "soft core" CPU . Currently the firmware is targeted at the Xilinx VC707 development board and at a custom board called Compact-SPIDR . The firmware can easily be ported to other Xilinx 7 series and ultra scale FPGAs. The gap between an ASIC and the data acquisition back-end is bridged by the SPIDR system. Using the high pin count VITA 57 FPGA Mezzanine Card (FMC) connector only a simple chip carrier PCB is required. A 1 and a 10 Gigabit Ethernet interface handle the connection to the back-end. These can be used simultaneously for high-speed data and configuration over separate channels. In addition to the FMC connector, configurable inputs and outputs are available for synchronization with other detectors. A high resolution (≈ 27 ps bin size) Time to Digital converter is provided for time stamping events in the detector. The SPIDR system is frequently used as readout for the Medipix3 and Timepix3 ASICs. Using the 10 Gigabit Ethernet interface it is possible to read out a single chip at full bandwidth or up to 12 chips at a reduced rate. Another recent application is the test-bed for the VeloPix ASIC, which is developed for the Vertex Detector of the LHCb experiment. In this case the SPIDR system processes the 20 Gbps scrambled data stream from the VeloPix and distributes it over four 10 Gigabit Ethernet links, and in addition provides the slow and fast control for the chip.

Development and Operation of Arrays of TES x-ray Microcalorimeters Suitable for Constellation-X

NASA Technical Reports Server (NTRS)

Kilbourne, C. A.; Bandler, S. R.; Brown, A. D.; Chervenak, J. A.; Eckart, M. E.; Finkbeiner, F. M.; Iyomoto, N.; Kelley, R. L.; Porter, F. S.; Smith, S. J.;

FIR Detector Sensitivity, Dynamic Range, and Multiplexing Requirements for the Origins Space Telescope (OST)

NASA Astrophysics Data System (ADS)

Staguhn, Johannes G.

2018-05-01

Spectroscopic, cold, space-based mid-to-far-infrared (FIR) missions, such as the Origins Space Telescope, will require large (tens of kilopixels), ultra-sensitive FIR detector arrays with sufficient dynamic range and high-density multiplexing schemes for the readout, in order to optimize the scientific return while staying within a realistic cost range. Issues like power consumption of multiplexers and their readout are significantly more important for space missions than they are for ground-based or suborbital applications. In terms of the detectors and their configuration into large arrays, significant development efforts are needed even for both of the most mature candidate superconducting detector technologies, namely transition edge sensors and (microwave) kinetic inductance detectors. Here we explore both practical and fundamental limits for those technologies in order to lay out a realistic path forward for both technologies. We conclude that beyond the need to enhance the detector sensitivities and pixel numbers by about an order of magnitude over currently existing devices, improved concepts for larger dynamic range and multiplexing density will be needed in order to optimize the scientific return of future cold FIR space missions. Background-limited, very high spectral resolution instruments will require photon-counting detectors.

Systems approach to the design of the CCD sensors and camera electronics for the AIA and HMI instruments on solar dynamics observatory

NASA Astrophysics Data System (ADS)

Waltham, N.; Beardsley, S.; Clapp, M.; Lang, J.; Jerram, P.; Pool, P.; Auker, G.; Morris, D.; Duncan, D.

2017-11-01

Solar Dynamics Observatory (SDO) is imaging the Sun in many wavelengths near simultaneously and with a resolution ten times higher than the average high-definition television. In this paper we describe our innovative systems approach to the design of the CCD cameras for two of SDO's remote sensing instruments, the Atmospheric Imaging Assembly (AIA) and the Helioseismic and Magnetic Imager (HMI). Both instruments share use of a custom-designed 16 million pixel science-grade CCD and common camera readout electronics. A prime requirement was for the CCD to operate with significantly lower drive voltages than before, motivated by our wish to simplify the design of the camera readout electronics. Here, the challenge lies in the design of circuitry to drive the CCD's highly capacitive electrodes and to digitize its analogue video output signal with low noise and to high precision. The challenge is greatly exacerbated when forced to work with only fully space-qualified, radiation-tolerant components. We describe our systems approach to the design of the AIA and HMI CCD and camera electronics, and the engineering solutions that enabled us to comply with both mission and instrument science requirements.

Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2006-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

VizieR Online Data Catalog: BVRI photometry of S5 0716+714 (Liao+, 2014)

NASA Astrophysics Data System (ADS)

Liao, N. H.; Bai, J. M.; Liu, H. T.; Weng, S. S.; Chen, L.; Li, F.

2016-04-01

The variability of S5 0716+714 was photometrically monitored in the optical bands at Yunnan Observatories, making use of the 2.4m telescope (http://www.gmg.org.cn/) and the 1.02m telescope (http://www1.ynao.ac.cn/~omt/). The 2.4m telescope, which began working in 2008 May, is located at the Lijiang Observatory of Yunnan Observatories, where the longitude is 100°01'51''E and the latitude is 26°42'32''N, with an altitude of 3193m. There are two photometric terminals. The PI VersArry 1300B CCD camera with 1340*1300 pixels covers a field of view 4'48''*4'40'' at the Cassegrain focus. The readout noise and gain are 6.05 electrons and 1.1 electrons ADU-1, respectively. The Yunnan Faint Object Spectrograph and Camera (YFOSC) has a field of view of about 10'*10' and 2000*2000 pixels for photometric observation. Each pixel corresponds to 0.283'' of the sky. The readout noise and gain of the YFOSC CCD are 7.5 electrons and 0.33 electrons ADU-1, respectively. The 1.02m telescope is located at the headquarters of Yunnan Observatories and is mainly used for photometry with standard Johnson UBV and Cousins RI filters. An Andor CCD camera with 2048*2048 pixels has been installed at its Cassegrain focus since 2008 May. The readout noise and gain are 7.8 electrons and 1.1 electrons ADU-1, respectively. (1 data file).

Manufacture of a Polyaniline Nanofiber Ammonia Sensor Integrated with a Readout Circuit Using the CMOS-MEMS Technique

PubMed Central

Liu, Mao-Chen; Dai, Ching-Liang; Chan, Chih-Hua; Wu, Chyan-Chyi

2009-01-01

This study presents the fabrication of a polyaniline nanofiber ammonia sensor integrated with a readout circuit on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The micro ammonia sensor consists of a sensing resistor and an ammonia sensing film. Polyaniline prepared by a chemical polymerization method was adopted as the ammonia sensing film. The fabrication of the ammonia sensor needs a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the ammonia sensing film is coated on the sensing resistor. The ammonia sensor, which is of resistive type, changes its resistance when the sensing film adsorbs or desorbs ammonia gas. A readout circuit is employed to convert the resistance of the ammonia sensor into the voltage output. Experimental results show that the sensitivity of the ammonia sensor is about 0.88 mV/ppm at room temperature. PMID:22399944

Manufacture of a Polyaniline Nanofiber Ammonia Sensor Integrated with a Readout Circuit Using the CMOS-MEMS Technique.

PubMed

Liu, Mao-Chen; Dai, Ching-Liang; Chan, Chih-Hua; Wu, Chyan-Chyi

2009-01-01

This study presents the fabrication of a polyaniline nanofiber ammonia sensor integrated with a readout circuit on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The micro ammonia sensor consists of a sensing resistor and an ammonia sensing film. Polyaniline prepared by a chemical polymerization method was adopted as the ammonia sensing film. The fabrication of the ammonia sensor needs a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the ammonia sensing film is coated on the sensing resistor. The ammonia sensor, which is of resistive type, changes its resistance when the sensing film adsorbs or desorbs ammonia gas. A readout circuit is employed to convert the resistance of the ammonia sensor into the voltage output. Experimental results show that the sensitivity of the ammonia sensor is about 0.88 mV/ppm at room temperature.

Active-Pixel Image Sensor With Analog-To-Digital Converters

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Mendis, Sunetra K.; Pain, Bedabrata; Nixon, Robert H.

1995-01-01

Proposed single-chip integrated-circuit image sensor contains 128 x 128 array of active pixel sensors at 50-micrometer pitch. Output terminals of all pixels in each given column connected to analog-to-digital (A/D) converter located at bottom of column. Pixels scanned in semiparallel fashion, one row at time; during time allocated to scanning row, outputs of all active pixel sensors in row fed to respective A/D converters. Design of chip based on complementary metal oxide semiconductor (CMOS) technology, and individual circuit elements fabricated according to 2-micrometer CMOS design rules. Active pixel sensors designed to operate at video rate of 30 frames/second, even at low light levels. A/D scheme based on first-order Sigma-Delta modulation.

Cobalt Oxide Nanosheet and CNT Micro Carbon Monoxide Sensor Integrated with Readout Circuit on Chip

PubMed Central

Dai, Ching-Liang; Chen, Yen-Chi; Wu, Chyan-Chyi; Kuo, Chin-Fu

2010-01-01

The study presents a micro carbon monoxide (CO) sensor integrated with a readout circuit-on-a-chip manufactured by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The sensing film of the sensor is a composite cobalt oxide nanosheet and carbon nanotube (CoOOH/CNT) film that is prepared by a precipitation-oxidation method. The structure of the CO sensor is composed of a polysilicon resistor and a sensing film. The sensor, which is of a resistive type, changes its resistance when the sensing film adsorbs or desorbs CO gas. The readout circuit is used to convert the sensor resistance into the voltage output. The post-processing of the sensor includes etching the sacrificial layers and coating the sensing film. The advantages of the sensor include room temperature operation, short response/recovery times and easy post-processing. Experimental results show that the sensitivity of the CO sensor is about 0.19 mV/ppm, and the response and recovery times are 23 s and 34 s for 200 ppm CO, respectively. PMID:22294897

Cobalt oxide nanosheet and CNT micro carbon monoxide sensor integrated with readout circuit on chip.

PubMed

Dai, Ching-Liang; Chen, Yen-Chi; Wu, Chyan-Chyi; Kuo, Chin-Fu

2010-01-01

The study presents a micro carbon monoxide (CO) sensor integrated with a readout circuit-on-a-chip manufactured by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The sensing film of the sensor is a composite cobalt oxide nanosheet and carbon nanotube (CoOOH/CNT) film that is prepared by a precipitation-oxidation method. The structure of the CO sensor is composed of a polysilicon resistor and a sensing film. The sensor, which is of a resistive type, changes its resistance when the sensing film adsorbs or desorbs CO gas. The readout circuit is used to convert the sensor resistance into the voltage output. The post-processing of the sensor includes etching the sacrificial layers and coating the sensing film. The advantages of the sensor include room temperature operation, short response/recovery times and easy post-processing. Experimental results show that the sensitivity of the CO sensor is about 0.19 mV/ppm, and the response and recovery times are 23 s and 34 s for 200 ppm CO, respectively.

A Novel Two-Wire Fast Readout Approach for Suppressing Cable Crosstalk in a Tactile Resistive Sensor Array

PubMed Central

Wu, Jianfeng; Wang, Yu; Li, Jianqing; Song, Aiguo

2016-01-01

For suppressing the crosstalk problem due to wire resistances and contacted resistances of the long flexible cables in tactile sensing systems, we present a novel two-wire fast readout approach for the two-dimensional resistive sensor array in shared row-column fashion. In the approach, two wires are used for every driving electrode and every sampling electrode in the resistive sensor array. The approach with a high readout rate, though it requires a large number of wires and many sampling channels, solves the cable crosstalk problem. We also verified the approach’s performance with Multisim simulations and actual experiments. PMID:27213373

ePix: a class of architectures for second generation LCLS cameras

DOE PAGES

Dragone, A.; Caragiulo, P.; Markovic, B.; ...

2014-03-31

ePix is a novel class of ASIC architectures, based on a common platform, optimized to build modular scalable detectors for LCLS. The platform architecture is composed of a random access analog matrix of pixel with global shutter, fast parallel column readout, and dedicated sigma-delta analog-to-digital converters per column. It also implements a dedicated control interface and all the required support electronics to perform configuration, calibration and readout of the matrix. Based on this platform a class of front-end ASICs and several camera modules, meeting different requirements, can be developed by designing specific pixel architectures. This approach reduces development time andmore » expands the possibility of integration of detector modules with different size, shape or functionality in the same camera. The ePix platform is currently under development together with the first two integrating pixel architectures: ePix100 dedicated to ultra low noise applications and ePix10k for high dynamic range applications.« less

Design of a CCD Camera for Space Surveillance

DTIC Science & Technology

2016-03-05

Laboratory fabricated CCID-51M, a 2048x1024 pixel Charge Couple Device (CCD) imager. [1] The mission objective is to observe and detect satellites in...phased to transfer the charge to the outputs. An electronic shutter is created by having an equal area of pixels covered by an opaque metal mask. The...Figure 4 CDS Timing Diagram By design the CCD readout rate is 400 KHz. This rate was chosen so reading the 2E6 pixels from one output is less than

The wide field imager instrument for Athena

NASA Astrophysics Data System (ADS)

Meidinger, Norbert; Eder, Josef; Eraerds, Tanja; Nandra, Kirpal; Pietschner, Daniel; Plattner, Markus; Rau, Arne; Strecker, Rafael

2016-07-01

The WFI (Wide Field Imager) instrument is planned to be one of two complementary focal plane cameras on ESA's next X-ray observatory Athena. It combines unprecedented survey power through its large field of view of 40 amin x 40 amin together with excellent count rate capability (>= 1 Crab). The energy resolution of the silicon sensor is state-of-the-art in the energy band of interest from 0.2 keV to 15 keV, e.g. the full width at half maximum of a line at 7 keV will be <= 170 eV until the end of the nominal mission phase. This performance is accomplished by using DEPFET active pixel sensors with a pixel size of 130 μm x 130 μm well suited to the on-axis angular resolution of 5 arcsec half energy width (HEW) of the mirror system. Each DEPFET pixel is a combined sensor-amplifier structure with a MOSFET integrated onto a fully depleted 450 μm thick silicon bulk. Two detectors are planned for the WFI instrument: A large-area detector comprising four sensors with a total of 1024 x 1024 pixels and a fast detector optimized for high count rate observations. This high count rate capable detector permits for bright point sources with an intensity of 1 Crab a throughput of more than 80% and a pile-up of less than 1%. The fast readout of the DEPFET pixel matrices is facilitated by an ASIC development, called VERITAS-2. Together with the Switcher-A, a control ASIC that allows for operation of the DEPFET in rolling shutter mode, these elements form the key components of the WFI detectors. The detectors are surrounded by a graded-Z shield, which has in particular the purpose to avoid fluorescence lines that would contribute to the instrument background. Together with ultra-thin coating of the sensor and particle identification by the detector itself, the particle induced background shall be minimized in order to achieve the scientific requirement of a total instrumental background value smaller than 5 x 10-3 cts/cm2/s/keV. Each detector has its dedicated detector electronics (DE) for supply and data acquisition. Due to the high frame rate in combination with the large pixel array, signal correction and event filtering have to be done on-board and in real-time as the raw data rate would by far exceed the feasible telemetry rate. The data streams are merged and compressed in the Instrument Control and Power distribution Unit (ICPU). The ICPU is the data, control and power interface of the WFI to the Athena spacecraft. The WFI instrument comprises in addition a filter wheel (FW) in front of the camera as well as an optical stray-light baffle. In the current phase A of the Athena project, the technology development is performed. At its end, breadboard models will be developed and tested to demonstrate a technical readiness level (TRL) of at least 5 for the various WFI subsystems before mission adoption in 2020.

Photodiode area effect on performance of X-ray CMOS active pixel sensors

NASA Astrophysics Data System (ADS)

Kim, M. S.; Kim, Y.; Kim, G.; Lim, K. T.; Cho, G.; Kim, D.

2018-02-01

Compared to conventional TFT-based X-ray imaging devices, CMOS-based X-ray imaging sensors are considered next generation because they can be manufactured in very small pixel pitches and can acquire high-speed images. In addition, CMOS-based sensors have the advantage of integration of various functional circuits within the sensor. The image quality can also be improved by the high fill-factor in large pixels. If the size of the subject is small, the size of the pixel must be reduced as a consequence. In addition, the fill factor must be reduced to aggregate various functional circuits within the pixel. In this study, 3T-APS (active pixel sensor) with photodiodes of four different sizes were fabricated and evaluated. It is well known that a larger photodiode leads to improved overall performance. Nonetheless, if the size of the photodiode is > 1000 μm2, the degree to which the sensor performance increases as the photodiode size increases, is reduced. As a result, considering the fill factor, pixel-pitch > 32 μm is not necessary to achieve high-efficiency image quality. In addition, poor image quality is to be expected unless special sensor-design techniques are included for sensors with a pixel pitch of 25 μm or less.

A High Stability Time Difference Readout Technique of RTD-Fluxgate Sensors

PubMed Central

Pang, Na; Cheng, Defu; Wang, Yanzhang

2017-01-01

The performance of Residence Times Difference (RTD)-fluxgate sensors is closely related to the time difference readout technique. The noise of the induction signal affects the quality of the output signal of the following circuit and the time difference detection, so the stability of the sensor is limited. Based on the analysis of the uncertainty of the RTD-fluxgate using the Bidirectional Magnetic Saturation Time Difference (BMSTD) readout scheme, the relationship between the saturation state of the magnetic core and the target (DC) magnetic field is studied in this article. It is proposed that combining the excitation and induction signals can provide the Negative Magnetic Saturation Time (NMST), which is a detection quantity used to measure the target magnetic field. Also, a mathematical model of output response between NMST and the target magnetic field is established, which analyzes the output NMST and sensitivity of the RTD-fluxgate sensor under different excitation conditions and is compared to the BMSTD readout scheme. The experiment results indicate that this technique can effectively reduce the noise influence. The fluctuation of time difference is less than ±0.1 μs in a target magnetic field range of ±5 × 104 nT. The accuracy and stability of the sensor are improved, so the RTD-fluxgate using the readout technique of high stability time difference is suitable for detecting weak magnetic fields. PMID:29023409

A time-based front-end ASIC for the silicon micro strip sensors of the bar PANDA Micro Vertex Detector

NASA Astrophysics Data System (ADS)

Di Pietro, V.; Brinkmann, K.-Th.; Riccardi, A.; Ritman, J.; Rivetti, A.; Rolo, M. D.; Stockmanns, T.; Zambanini, A.

2016-03-01

The bar PANDA (Antiproton Annihilation at Darmstadt) experiment foresees many detectors for tracking, particle identification and calorimetry. Among them, the innermost is the MVD (Micro Vertex Detector) responsible for a precise tracking and the reconstruction of secondary vertices. This detector will be built from both hybrid pixel (two inner barrels and six forward disks) and double-sided micro strip (two outer barrels and outer rim of the last two disks) silicon sensors. A time-based approach has been chosen for the readout ASIC of the strip sensors. The PASTA (bar PANDA Strip ASIC) chip aims at high resolution time-stamping and charge information through the Time over Threshold (ToT) technique. It benefits from a Time to Digital Converter (TDC) allowing a time bin width down to 50 ps. The analog front-end was designed to serve both n-type and p-type strips and the performed simulations show remarkable performances in terms of linearity and electronic noise. The TDC consists of an analog interpolator, a digital local controller, and a digital global controller as the common back-end for all of the 64 channels.

The Gigatracker: An ultra-fast and low-mass silicon pixel detector for the NA62 experiment

NASA Astrophysics Data System (ADS)

Fiorini, M.; Carassiti, V.; Ceccucci, A.; Cortina, E.; Cotta Ramusino, A.; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Mapelli, A.; Marchetto, F.; Martin, E.; Martoiu, S.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Petrucci, F.; Riedler, P.; Aglieri Rinella, G.; Rivetti, A.; Tiuraniemi, S.

2011-02-01

The Gigatracker is a hybrid silicon pixel detector developed to track the highly intense NA62 hadron beam with a time resolution of 150 ps (rms). The beam spectrometer of the experiment is composed of three Gigatracker stations installed in vacuum in order to precisely measure momentum, time and direction of every traversing particle. Precise tracking demands a very low mass of the detector assembly ( <0.5% X0 per station) in order to limit multiple scattering and beam hadronic interactions. The high rate and especially the high timing precision requirements are very demanding: two R&D options are ongoing and the corresponding prototype read-out chips have been recently designed and produced in 0.13 μm CMOS technology. One solution makes use of a constant fraction discriminator and on-pixel analogue-based time-to-digital-converter (TDC); the other comprises a delay-locked loop based TDC placed at the end of each pixel column and a time-over-threshold discriminator with time-walk correction technique. The current status of the R&D program is overviewed and results from the prototype read-out chips test are presented.

Low-noise readout circuit for SWIR focal plane arrays

NASA Astrophysics Data System (ADS)

Altun, Oguz; Tasdemir, Ferhat; Nuzumlali, Omer Lutfi; Kepenek, Reha; Inceturkmen, Ercihan; Akyurek, Fatih; Tunca, Can; Akbulut, Mehmet

2017-02-01

This paper reports a 640x512 SWIR ROIC with 15um pixel pitch that is designed and fabricated using 0.18um CMOS process. Main challenge of SWIR ROIC design is related to input circuit due to pixel area and noise limitations. In this design, CTIA with single stage amplifier is utilized as input stage. The pixel design has three pixel gain options; High Gain (HG), Medium Gain (MG), and Low Gain (LG) with corresponding Full-Well-Capacities of 18.7ké, 190ké and 1.56Mé, respectively. According to extracted simulation results, 5.9é noise is achieved at HG mode and 200é is achieved at LG mode of operation. The ROIC can be programmed through an SPI interface. It supports 1, 2 and 4 output modes which enables the user to configure the detector to work at 30, 60 and 120fps frame rates. In the 4 output mode, the total power consumption of the ROIC is less than 120mW. The ROIC is powered from a 3.3V analog supply and allows for an output swing range in excess of 2V. Anti-blooming feature is added to prevent any unwanted blooming effect during readout.

First qualification and selection of the eROSITA PNCCDs

NASA Astrophysics Data System (ADS)

Schächner, G.; Andritschke, R.; Hälker, O.; Herrmann, S.; Kimmel, N.; Meidinger, N.; Strüder, L.

2010-12-01

For the X-ray astronomy instrument eROSITA a framestore PNCCD was developed by the MPI Halbleiterlabor. The PNCCD has an image area of 384×384 pixels with a size of 75 μm×75 μm. Each channel of the PNCCD has an own readout anode which allows parallel amplification and signal processing of the CCD signals of one row. The first measurements for the spectroscopic characterization of the PNCCDs are made with a special measurement setup—the so-called Cold Chuck Probe Station. The Cold Chuck Probe Station allows to fully operate the CCD without mounting and bonding the chip on a PCB as the CCD is contacted only with needles. Thus all eROSITA PNCCDs can be qualified under the same measurement conditions and with an identical electronic setup. Therefore the results can be compared directly. The spectroscopic properties of the PNCCDs, like the charge transfer efficiency and the energy resolution are measured. Also pixel defects such as bright pixels or non-transferring pixels are detected. With the Cold Chuck Probe Station a readout noise of 2.7 e - ENC can be achieved and reliable measurement results obtained. Based on these results the best PNCCDs will be selected for eROSITA.

Plasmonic trace sensing below the photon shot noise limit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pooser, Raphael C.; Lawrie, Benjamin J.

Plasmonic sensors are important detectors of biochemical trace compounds, but those that utilize optical readout are approaching their absolute limits of detection as defined by the Heisenberg uncertainty principle in both differential intensity and phase readout. However, the use of more general minimum uncertainty states in the form of squeezed light can push the noise floor in these sensors below the shot noise limit (SNL) in one analysis variable at the expense of another. Here, we demonstrate a quantum plasmonic sensor whose noise floor is reduced below the SNL in order to perform index of refraction measurements with sensitivities unobtainablemore » with classical plasmonic sensors. The increased signal-to-noise ratio can result in faster detection of analyte concentrations that were previously lost in the noise. As a result, these benefits are the hallmarks of a sensor exploiting quantum readout fields in order to manipulate the limits of the Heisenberg uncertainty principle.« less

Plasmonic trace sensing below the photon shot noise limit

DOE PAGES

Pooser, Raphael C.; Lawrie, Benjamin J.

2015-12-09

Plasmonic sensors are important detectors of biochemical trace compounds, but those that utilize optical readout are approaching their absolute limits of detection as defined by the Heisenberg uncertainty principle in both differential intensity and phase readout. However, the use of more general minimum uncertainty states in the form of squeezed light can push the noise floor in these sensors below the shot noise limit (SNL) in one analysis variable at the expense of another. Here, we demonstrate a quantum plasmonic sensor whose noise floor is reduced below the SNL in order to perform index of refraction measurements with sensitivities unobtainablemore » with classical plasmonic sensors. The increased signal-to-noise ratio can result in faster detection of analyte concentrations that were previously lost in the noise. As a result, these benefits are the hallmarks of a sensor exploiting quantum readout fields in order to manipulate the limits of the Heisenberg uncertainty principle.« less

IRAC test report. Gallium doped silicon band 2: Read noise and dark current

NASA Technical Reports Server (NTRS)

Lamb, Gerald; Shu, Peter; Mather, John; Ewin, Audrey; Bowser, Jeffrey

1987-01-01

A direct readout infrared detector array, a candidate for the Space Infrared Telescope Facility (SIRTF) Infrared Array Camera (IRAC), has been tested. The array has a detector surface of gallium doped silicon, bump bonded to a 58x62 pixel MOSFET multiplexer on a separate chip. Although this chip and system do not meet all the SIRTF requirements, the critically important read noise is within a factor of 3 of the requirement. Significant accomplishments of this study include: (1) development of a low noise correlated double sampling readout system with a readout noise of 127 to 164 electrons (based on the detector integrator capacitance of 0.1 pF); (2) measurement of the readout noise of the detector itself, ranging from 123 to 214 electrons with bias only (best to worst pixel), and 256 to 424 electrons with full clocking in normal operation at 5.4 K where dark current is small. Thirty percent smaller read noises are obtained at a temperature of 15K; (3) measurement of the detector response versus integration time, showing significant nonlinear behavior for large signals, well below the saturation level; and (4) development of a custom computer interface and suitable software for collection, analysis and display of data.

SAPHIRE (scintillator avalanche photoconductor with high resolution emitter readout) for low dose x-ray imaging: Spatial resolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li Dan; Zhao Wei

2008-07-15

An indirect flat panel imager (FPI) with programmable avalanche gain and field emitter array (FEA) readout is being investigated for low-dose and high resolution x-ray imaging. It is made by optically coupling a structured x-ray scintillator, e.g., thallium (Tl) doped cesium iodide (CsI), to an amorphous selenium (a-Se) avalanche photoconductor called high-gain avalanche rushing amorphous photoconductor (HARP). The charge image created by the scintillator/HARP (SHARP) combination is read out by the electron beams emitted from the FEA. The proposed detector is called scintillator avalanche photoconductor with high resolution emitter readout (SAPHIRE). The programmable avalanche gain of HARP can improve themore » low dose performance of indirect FPI while the FEA can be made with pixel sizes down to 50 {mu}m. Because of the avalanche gain, a high resolution type of CsI (Tl), which has not been widely used in indirect FPI due to its lower light output, can be used to improve the high spatial frequency performance. The purpose of the present article is to investigate the factors affecting the spatial resolution of SAPHIRE. Since the resolution performance of the SHARP combination has been well studied, the focus of the present work is on the inherent resolution of the FEA readout method. The lateral spread of the electron beam emitted from a 50 {mu}mx50 {mu}m pixel FEA was investigated with two different electron-optical designs: mesh-electrode-only and electrostatic focusing. Our results showed that electrostatic focusing can limit the lateral spread of electron beams to within the pixel size of down to 50 {mu}m. Since electrostatic focusing is essentially independent of signal intensity, it will provide excellent spatial uniformity.« less

A Multi-Modality CMOS Sensor Array for Cell-Based Assay and Drug Screening.

PubMed

Chi, Taiyun; Park, Jong Seok; Butts, Jessica C; Hookway, Tracy A; Su, Amy; Zhu, Chengjie; Styczynski, Mark P; McDevitt, Todd C; Wang, Hua

2015-12-01

In this paper, we present a fully integrated multi-modality CMOS cellular sensor array with four sensing modalities to characterize different cell physiological responses, including extracellular voltage recording, cellular impedance mapping, optical detection with shadow imaging and bioluminescence sensing, and thermal monitoring. The sensor array consists of nine parallel pixel groups and nine corresponding signal conditioning blocks. Each pixel group comprises one temperature sensor and 16 tri-modality sensor pixels, while each tri-modality sensor pixel can be independently configured for extracellular voltage recording, cellular impedance measurement (voltage excitation/current sensing), and optical detection. This sensor array supports multi-modality cellular sensing at the pixel level, which enables holistic cell characterization and joint-modality physiological monitoring on the same cellular sample with a pixel resolution of 80 μm × 100 μm. Comprehensive biological experiments with different living cell samples demonstrate the functionality and benefit of the proposed multi-modality sensing in cell-based assay and drug screening.

CCD sensors in synchrotron X-ray detectors

NASA Astrophysics Data System (ADS)

Strauss, M. G.; Naday, I.; Sherman, I. S.; Kraimer, M. R.; Westbrook, E. M.; Zaluzec, N. J.

1988-04-01

The intense photon flux from advanced synchrotron light sources, such as the 7-GeV synchrotron being designed at Argonne, require integrating-type detectors. Charge-coupled devices (CCDs) are well suited as synchrotron X-ray detectors. When irradiated indirectly via a phosphor followed by reducing optics, diffraction patterns of 100 cm 2 can be imaged on a 2 cm 2 CCD. With a conversion efficiency of ˜ 1 CCD electron/X-ray photon, a peak saturation capacity of > 10 6 X-rays can be obtained. A programmable CCD controller operating at a clock frequency of 20 MHz has been developed. The readout rate is 5 × 10 6 pixels/s and the shift rate in the parallel registers is 10 6 lines/s. The test detector was evaluated in two experiments. In protein crystallography diffraction patterns have been obtained from a lysozyme crystal using a conventional rotating anode X-ray generator. Based on these results we expect to obtain at a synchrotron diffraction images at a rate of ˜ 1 frame/s or a complete 3-dimensional data set from a single crystal in ˜ 2 min. In electron energy-loss spectroscopy (EELS), the CCD was used in a parallel detection mode which is similar to the mode array detectors are used in dispersive EXAFS. With a beam current corresponding to 3 × 10 9 electron/s on the detector, a series of 64 spectra were recorded on the CCD in a continuous sequence without interruption due to readout. The frame-to-frame pixel signal fluctuations had σ = 0.4% from which DQE = 0.4 was obtained, where the detector conversion efficiency was 2.6 CCD electrons/X-ray photon. These multiple frame series also showed the time-resolved modulation of the electron microscope optics by stray magnetic fields.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meng, Ling-Jian

A gamma ray detector apparatus comprises a solid state detector that includes a plurality of anode pixels and at least one cathode. The solid state detector is configured for receiving gamma rays during an interaction and inducing a signal in an anode pixel and in a cathode. An anode pixel readout circuit is coupled to the plurality of anode pixels and is configured to read out and process the induced signal in the anode pixel and provide triggering and addressing information. A waveform sampling circuit is coupled to the at least one cathode and configured to read out and processmore » the induced signal in the cathode and determine energy of the interaction, timing of the interaction, and depth of interaction.« less

Composite x-ray image assembly for large-field digital mammography with one- and two-dimensional positioning of a focal plane array

NASA Technical Reports Server (NTRS)

Halama, G.; McAdoo, J.; Liu, H.

1998-01-01

To demonstrate the feasibility of a novel large-field digital mammography technique, a 1024 x 1024 pixel Loral charge-coupled device (CCD) focal plane array (FPA) was positioned in a mammographic field with one- and two-dimensional scan sequences to obtain 950 x 1800 pixel and 3600 x 3600 pixel composite images, respectively. These experiments verify that precise positioning of FPAs produced seamless composites and that the CCD mosaic concept has potential for high-resolution, large-field imaging. The proposed CCD mosaic concept resembles a checkerboard pattern with spacing left between the CCDs for the driver and readout electronics. To obtain a complete x-ray image, the mosaic must be repositioned four times, with an x-ray exposure at each position. To reduce the patient dose, a lead shield with appropriately patterned holes is placed between the x-ray source and the patient. The high-precision motorized translation stages and the fiber-coupled-scintillating-screen-CCD sensor assembly were placed in the position usually occupied by the film cassette. Because of the high mechanical precision, seamless composites were constructed from the subimages. This paper discusses the positioning, image alignment procedure, and composite image results. The paper only addresses the formation of a seamless composite image from subimages and will not consider the effects of the lead shield, multiple CCDs, or the speed of motion.

BAW sensor readout circuit based on Pierce oscillator architecture

NASA Astrophysics Data System (ADS)

Gao, Yang; Yin, Xi-Yang; Han, Bin; Wang, Yu-Hang

2017-10-01

Bulk Acoustic Wave Resonators (BAWRs) have been well developed both as filters and as high sensitivity sensors in recent years. In contrast to traditional megahertz quartz resonators, BAWRs offer significant increases in resonant frequency, typically operating in gigahertz regimes. This translates into a potential sensitivity increase of more than three orders of magnitude over traditional QCM (Quartz Crystal Microbalance) devices. Given the micrometer-scale size of BAW sensor-head, read-out circuitry can monolithic integrated with this GHz transducer is urgently needed to produce small, robust, and inexpensive sensor systems. A BAW sensor read-out circuit prototype based on Pierce oscillator architecture is fulfilled in this paper. Based on the differential measurement scheme, two uniform BAWRs are used to constitute two BAW oscillators as a reference and a measurement branch respectively. The resonant frequency shift caused by the measurand is obtained by mixing and filtering the two oscillator signals. Then, the intermediate signal is amplified, shaped and converted to a digital one. And a FPGA is used for frequency detection. Taking 2 GHz BAW mass sensor as a case study, deign procedure are given in details. Simulation and experimental results reveal a 0-99 MHz frequency shift measurement range. Main factors affecting phase noise of the BAW oscillator (i.e. mainly frequency stability of the BAW sensor readout circuit) are also discussed for further optimizations.

First light from a very large area pixel array for high-throughput x-ray polarimetry

NASA Astrophysics Data System (ADS)

Bellazzini, R.; Spandre, G.; Minuti, M.; Baldini, L.; Brez, A.; Cavalca, F.; Latronico, L.; Omodei, N.; Massai, M. M.; Sgrò, C.; Costa, E.; Soffitta, P.; Krummenacher, F.; de Oliveira, R.

2006-06-01

We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which represents a big step forward both in terms of size and performance, is the last version of three generations of custom ASICs of increasing complexity. The CMOS pixel array has the top metal layer patterned in a matrix of 105600 hexagonal pixels at 50μm pitch. Each pixel is directly connected to the underneath full electronics chain which has been realized in the remaining five metal and single poly-silicon layers of a standard 0.18μm CMOS VLSI technology. The chip has customizable self-triggering capability and includes a signal pre-processing function for the automatic localization of the event coordinates. In this way it is possible to reduce significantly the readout time and the data volume by limiting the signal output only to those pixels belonging to the region of interest. The very small pixel area and the use of a deep sub-micron CMOS technology has brought the noise down to 50 electrons ENC. Results from in depth tests of this device when coupled to a fine pitch (50μm on a triangular pattern) Gas Electron Multiplier are presented. The matching of readout and gas amplification pitch allows getting optimal results. The application of this detector for Astronomical X-Ray Polarimetry is discussed. The experimental detector response to polarized and unpolarized X-ray radiation when working with two gas mixtures and two different photon energies is shown. Results from a full MonteCarlo simulation for several galactic and extragalactic astronomical sources are also reported.

Small-angle solution scattering using the mixed-mode pixel array detector

PubMed Central

Koerner, Lucas J.; Gillilan, Richard E.; Green, Katherine S.; Wang, Suntao; Gruner, Sol M.

2011-01-01

Solution small-angle X-ray scattering (SAXS) measurements were obtained using a 128 × 128 pixel X-ray mixed-mode pixel array detector (MMPAD) with an 860 µs readout time. The MMPAD offers advantages for SAXS experiments: a pixel full-well of >2 × 107 10 keV X-rays, a maximum flux rate of 108 X-rays pixel−1 s−1, and a sub-pixel point-spread function. Data from the MMPAD were quantitatively compared with data from a charge-coupled device (CCD) fiber-optically coupled to a phosphor screen. MMPAD solution SAXS data from lysozyme solutions were of equal or better quality than data captured by the CCD. The read-noise (normalized by pixel area) of the MMPAD was less than that of the CCD by an average factor of 3.0. Short sample-to-detector distances were required owing to the small MMPAD area (19.2 mm × 19.2 mm), and were revealed to be advantageous with respect to detector read-noise. As predicted by the Shannon sampling theory and confirmed by the acquisition of lysozyme solution SAXS curves, the MMPAD at short distances is capable of sufficiently sampling a solution SAXS curve for protein shape analysis. The readout speed of the MMPAD was demonstrated by continuously monitoring lysozyme sample evolution as radiation damage accumulated. These experiments prove that a small suitably configured MMPAD is appropriate for time-resolved solution scattering measurements. PMID:21335900

Challenges and trends in magnetic sensor integration with microfluidics for biomedical applications

NASA Astrophysics Data System (ADS)

Cardoso, S.; Leitao, D. C.; Dias, T. M.; Valadeiro, J.; Silva, M. D.; Chicharo, A.; Silverio, V.; Gaspar, J.; Freitas, P. P.

2017-06-01

Magnetoresistive (MR) sensors have been successfully applied in many technologies, in particular readout electronics and smart systems for multiple signal addressing and readout. When single sensors are used, the requirements relate to spatial resolution and localized field sources. The integration of MR sensors in adaptable media (e.g. flexible, stretchable substrates) offers the possibility to merge the magnetic detection with mechanical functionalities. In addition, the precision of a micrometric needle can benefit greatly from the integration of MR sensors with submicrometric resolution. In this paper, we demonstrate through several detailed examples how advanced MR sensors can be integrated with the systems described above, and also with microfluidic technologies. Here, the challenges of handling liquids over a chip combine with those for miniaturization of microelectronics for MR readout. However, when these are overcome, the result is an integrated system with added functionalities, capable of answering the demand in biomedicine and biochemistry for lab-on-a-chip devices.

Improved radiation tolerance of MAPS using a depleted epitaxial layer

NASA Astrophysics Data System (ADS)

Dorokhov, A.; Bertolone, G.; Baudot, J.; Brogna, A. S.; Colledani, C.; Claus, G.; De Masi, R.; Deveaux, M.; Dozière, G.; Dulinski, W.; Fontaine, J.-C.; Goffe, M.; Himmi, A.; Hu-Guo, Ch.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Santos, C.; Specht, M.; Valin, I.; Voutsinas, G.; Wagner, F. M.; Winter, M.

2010-12-01

Tracking performance of Monolithic Active Pixel Sensors (MAPS) developed at IPHC (Turchetta, et al., 2001) [1] have been extensively studied (Winter, et al., 2001; Gornushkin, et al., 2002) [2,3]. Numerous sensor prototypes, called MIMOSA, were fabricated and tested since 1999 in order to optimise the charge collection efficiency and power dissipation, to minimise the noise and to increase the readout speed. The radiation tolerance was also investigated. The highest fluence tolerable for a 10 μm pitch device was found to be ˜1013 neq/cm2, while it was only 2×1012 neq/cm2 for a 20 μm pitch device. The purpose of this paper is to show that the tolerance to non-ionising radiation may be extended up to O(10 14) n eq/cm 2. This goal relies on a fabrication process featuring a 15 μm thin, high resistivity ( ˜1 kΩ cm) epitaxial layer. A sensor prototype (MIMOSA-25) was fabricated in this process to explore its detection performance. The depletion depth of the epitaxial layer at standard CMOS voltages ( <5 V) is similar to the layer thickness. Measurements with m.i.p.s show that the charge collected in the seed pixel is at least twice larger for the depleted epitaxial layer than for the undepleted one, translating into a signal-to-noise ratio (SNR) of ˜50. Tests after irradiation have shown that this excellent performance is maintained up to the highest fluence considered ( 3×1013 neq/cm2), making evidence of a significant extension of the radiation tolerance limits of MAPS. Standing for minimum ionising particle.

Particle tracking with a Timepix based triple GEM detector

NASA Astrophysics Data System (ADS)

George, S. P.; Murtas, F.; Alozy, J.; Curioni, A.; Rosenfeld, A. B.; Silari, M.

2015-11-01

This paper details the response of a triple GEM detector with a 55 μmetre pitch pixelated ASIC for readout. The detector is operated as a micro TPC with 9.5 cm3 sensitive volume and characterized with a mixed beam of 120 GeV protons and positive pions. A process for reconstruction of incident particle tracks from individual ionization clusters is described and scans of the gain and drift fields are performed. The angular resolution of the measured tracks is characterized. Also, the readout was operated in a mixed mode where some pixels measure drift time and others charge. This was used to measure the energy deposition in the detector and the charge cloud size as a function of interaction depth. The future uses of the device, including in microdosimetry are discussed.

Microlens performance limits in sub-2mum pixel CMOS image sensors.

PubMed

Huo, Yijie; Fesenmaier, Christian C; Catrysse, Peter B

2010-03-15

CMOS image sensors with smaller pixels are expected to enable digital imaging systems with better resolution. When pixel size scales below 2 mum, however, diffraction affects the optical performance of the pixel and its microlens, in particular. We present a first-principles electromagnetic analysis of microlens behavior during the lateral scaling of CMOS image sensor pixels. We establish for a three-metal-layer pixel that diffraction prevents the microlens from acting as a focusing element when pixels become smaller than 1.4 microm. This severely degrades performance for on and off-axis pixels in red, green and blue color channels. We predict that one-metal-layer or backside-illuminated pixels are required to extend the functionality of microlenses beyond the 1.4 microm pixel node.

An NFC-Enabled CMOS IC for a Wireless Fully Implantable Glucose Sensor.

PubMed

DeHennis, Andrew; Getzlaff, Stefan; Grice, David; Mailand, Marko

2016-01-01

This paper presents an integrated circuit (IC) that merges integrated optical and temperature transducers, optical interface circuitry, and a near-field communication (NFC)-enabled digital, wireless readout for a fully passive implantable sensor platform to measure glucose in people with diabetes. A flip-chip mounted LED and monolithically integrated photodiodes serve as the transduction front-end to enable fluorescence readout. A wide-range programmable transimpedance amplifier adapts the sensor signals to the input of an 11-bit analog-to-digital converter digitizing the measurements. Measurement readout is enabled by means of wireless backscatter modulation to a remote NFC reader. The system is able to resolve current levels of less than 10 pA with a single fluorescent measurement energy consumption of less than 1 μJ. The wireless IC is fabricated in a 0.6-μm-CMOS process and utilizes a 13.56-MHz-based ISO15693 for passive wireless readout through a NFC interface. The IC is utilized as the core interface to a fluorescent, glucose transducer to enable a fully implantable sensor-based continuous glucose monitoring system.

A novel radiation hard pixel design for space applications

NASA Astrophysics Data System (ADS)

Aurora, A. M.; Marochkin, V. V.; Tuuva, T.

2017-11-01

We have developed a novel radiation hard photon detector concept based on Modified Internal Gate Field Effect Transistor (MIGFET) wherein a buried Modified Internal Gate (MIG) is implanted underneath a channel of a FET. In between the MIG and the channel of the FET there is depleted semiconductor material forming a potential barrier between charges in the channel and similar type signal charges located in the MIG. The signal charges in the MIG have a measurable effect on the conductance of the channel. In this paper a radiation hard double MIGFET pixel is investigated comprising two MIGFETs. By transferring the signal charges between the two MIGs Non-Destructive Correlated Double Sampling Readout (NDCDSR) is enabled. The radiation hardness of the proposed double MIGFET structure stems from the fact that interface related issues can be considerably mitigated. The reason for this is, first of all, that interface generated dark noise can be completely avoided and secondly, that interface generated 1/f noise can be considerably reduced due to a deep buried channel readout configuration. Electrical parameters of the double MIGFET pixel have been evaluated by 3D TCAD simulation study. Simulation results show the absence of interface generated dark noise, significantly reduced interface generated 1/f noise, well performing NDCDSR operation, and blooming protection due to an inherent vertical anti-blooming structure. In addition, the backside illuminated thick fully depleted pixel design results in low crosstalk due to lack of diffusion and good quantum efficiency from visible to Near Infra-Red (NIR) light. These facts result in excellent Signal-to-Noise Ratio (SNR) and very low crosstalk enabling thus excellent image quality. The simulation demonstrates the charge to current conversion gain for source current read-out to be 1.4 nA/e.

Hot pixel generation in active pixel sensors: dosimetric and micro-dosimetric response

NASA Technical Reports Server (NTRS)

Scheick, Leif; Novak, Frank

2003-01-01

The dosimetric response of an active pixel sensor is analyzed. heavy ions are seen to damage the pixel in much the same way as gamma radiation. The probability of a hot pixel is seen to exhibit behavior that is not typical with other microdose effects.

Assembly and Integration Process of the First High Density Detector Array for the Atacama Cosmology Telescope

NASA Technical Reports Server (NTRS)

Li, Yaqiong; Choi, Steve; Ho, Shuay-Pwu; Crowley, Kevin T.; Salatino, Maria; Simon, Sara M.; Staggs, Suzanne T.; Nati, Federico; Wollack, Edward J.

2016-01-01

The Advanced ACTPol (AdvACT) upgrade on the Atacama Cosmology Telescope (ACT) consists of multichroicTransition Edge Sensor (TES) detector arrays to measure the Cosmic Microwave Background (CMB) polarization anisotropies in multiple frequency bands. The first AdvACT detector array, sensitive to both 150 and 230 GHz, is fabricated on a 150 mm diameter wafer and read out with a completely different scheme compared to ACTPol. Approximately 2000 TES bolometers are packed into the wafer leading to both a much denser detector density and readout circuitry. The demonstration of the assembly and integration of the AdvACT arrays is important for the next generation CMB experiments, which will continue to increase the pixel number and density. We present the detailed assembly process of the first AdvACT detector array.

CCD developments for particle colliders

NASA Astrophysics Data System (ADS)

Stefanov, Konstantin D.

2006-09-01

Charge Coupled Devices (CCDs) have been successfully used in several high-energy physics experiments over the last 20 years. Their small pixel size and excellent precision provide superb tool for studying of short-lived particles and understanding the nature at fundamental level. Over the last years the Linear Collider Flavour Identification (LCFI) collaboration has developed Column-Parallel CCDs (CPCCD) and CMOS readout chips to be used for the vertex detector at the International Linear Collider (ILC). The CPCCDs are very fast devices capable of satisfying the challenging requirements imposed by the beam structure of the superconducting accelerator. First set of prototype devices have been designed, manufactured and successfully tested, with second-generation chips on the way. Another idea for CCD-based device, the In-situ Storage Image Sensor (ISIS) is also under development and the first prototype is in production.

CCD-based vertex detector for ILC

NASA Astrophysics Data System (ADS)

Stefanov, Konstantin D.

2006-12-01

Charge Coupled Devices (CCDs) have been successfully used in several high-energy physics experiments over the last 20 years. Their small pixel size and excellent precision provide a superb tool for studying of short-lived particles and understanding the nature at fundamental level. Over the last few years the Linear Collider Flavour Identification (LCFI) collaboration has developed Column-Parallel CCDs (CPCCD) and CMOS readout chips, to be used for the vertex detector at the International Linear Collider (ILC). The CPCCDs are very fast devices capable of satisfying the challenging requirements imposed by the beam structure of the superconducting accelerator. The first set of prototype devices have been successfully designed, manufactured and tested, with second generation chips on the way. Another idea for CCD-based device, the In-situ Storage Image Sensor (ISIS) is also under development and the first prototype has been manufactured.

Sub-electron read noise and millisecond full-frame readout with the near infrared eAPD array SAPHIRA

NASA Astrophysics Data System (ADS)

Finger, Gert; Baker, Ian; Alvarez, Domingo; Dupuy, Christophe; Ives, Derek; Meyer, Manfred; Mehrgan, Leander; Stegmeier, Jörg; Weller, Harald J.

2016-07-01

In 2007 ESO started a program at SELEX (now LEONARDO) to develop noiseless near infrared HgCdTe electron avalanche photodiode arrays (eAPD)[1][2][3]. This eAPD technology is only way to overcome the limiting CMOS noise barrier of near infrared sensors used for wavefront sensing and fringe tracking. After several development cycles of solid state engineering techniques which can be easily applied to the chosen growth technology of metal organic vapour phase epitaxy (MOVPE), the eAPD arrays have matured and resulted in the SAPHIRA arrays. They have a format of 320x256 pixels with a pitch of 24 μm. They now offer an unmatched combination of sub-electron read noise at millisecond frame readout rates. The first generation of SAPHIRA arrays were only sensitive in H and K-band. With the removal of a wide bandgap buffer layer the arrays are now sensitive from λ=0.8 μm to 2.5 μm with high quantum efficiency over the entire wavelength range. The high temperature anneal applied during the growth process produces material with superb cosmetic quality at an APD gain of over 600. The design of the SAPHIRA ROIC has also been revised and the new ME1000 ROIC has an optimized analogue chain and more flexible readout modes. The clock for the vertical shift register is now under external control. The advantage of this is that correlated-double-sampling and uncorrelated readout in the rolling shutter mode now have a duty cycle of 100% at the maximum frame rate. Furthermore, to reduce the readout noise rows can be read several times before and after row reset. Since the APD gain is sufficiently high that one photon produces many more electrons than the square root of kTC which is the charge uncertainty after reset, signals of one photon per exposure can be easily detected without the need for double correlated sampling. First results obtained with the fringe tracker in GRAVITY and the four SAPHIRA wavefront sensors installed in the CIAO adaptive optics systems of the four 8 meter telescopes of the VLTI have proven the unrivaled performance of the SAPHIRA eAPD technology. A future program is being assembled to develop eAPD arrays having a larger format of 1Kx1K capable of frame rates of 1.2 KHz. There are also good prospects to offer low dark current eAPD technology for large format science focal planes as well.

Design, optimization and evaluation of a "smart" pixel sensor array for low-dose digital radiography

NASA Astrophysics Data System (ADS)

Wang, Kai; Liu, Xinghui; Ou, Hai; Chen, Jun

2016-04-01

Amorphous silicon (a-Si:H) thin-film transistors (TFTs) have been widely used to build flat-panel X-ray detectors for digital radiography (DR). As the demand for low-dose X-ray imaging grows, a detector with high signal-to-noise-ratio (SNR) pixel architecture emerges. "Smart" pixel is intended to use a dual-gate photosensitive TFT for sensing, storage, and switch. It differs from a conventional passive pixel sensor (PPS) and active pixel sensor (APS) in that all these three functions are combined into one device instead of three separate units in a pixel. Thus, it is expected to have high fill factor and high spatial resolution. In addition, it utilizes the amplification effect of the dual-gate photosensitive TFT to form a one-transistor APS that leads to a potentially high SNR. This paper addresses the design, optimization and evaluation of the smart pixel sensor and array for low-dose DR. We will design and optimize the smart pixel from the scintillator to TFT levels and validate it through optical and electrical simulation and experiments of a 4x4 sensor array.

CMOS Active Pixel Sensor Star Tracker with Regional Electronic Shutter

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly; Pain, Bedabrata; Staller, Craig; Clark, Christopher; Fossum, Eric

1996-01-01

The guidance system in a spacecraft determines spacecraft attitude by matching an observed star field to a star catalog....An APS(active pixel sensor)-based system can reduce mass and power consumption and radiation effects compared to a CCD(charge-coupled device)-based system...This paper reports an APS (active pixel sensor) with locally variable times, achieved through individual pixel reset (IPR).

The QWIP Focal Plane Assembly for NASA's Landsat Data Continuity Mission

NASA Technical Reports Server (NTRS)

Jhabvala, M; Choi, K.; Reuter, D.; Sundaram, M.; Jhabvala, C; La, Anh; Waczynski, Augustyn; Bundas, Jason

2010-01-01

The Thermal Infrared Sensor (TIRS) is a QWIP based instrument intended to supplement the Operational Land Imager (OLI) for the Landsat Data Continuity Mission (LDCM). The TIRS instrument is a dual channel far infrared imager with the two bands centered at 10.8[mu]m and 12.0[mu]m. The focal plane assembly (FPA) consists of three 640x512 GaAs Quantum Well Infrared Photodetector (QWIP) arrays precisely mounted to a silicon carrier substrate that is mounted on an invar baseplate. The two spectral bands are defined by bandpass filters mounted in close proximity to the detector surfaces. The focal plane operating temperature is 43K. The QWIP arrays are hybridized to Indigo ISC9803 readout integrated circuits (ROICs). Two varieties of QWIP detector arrays are being developed for this project, a corrugated surface structure QWIP and a grating surface structure QWIP. This paper will describe the TIRS system noise equivalent temperature difference sensitivity as it affects the QWIP focal plane performance requirements: spectral response, dark current, conversion efficiency, read noise, temperature stability, pixel uniformity, optical crosstalk and pixel yield. Additional mechanical constraints as well as qualification through Technology Readiness Level 6 (TRL 6) will also be discussed.

The QWIP Focal Plane Assembly for NASA's Landsat Data Continuity Mission

NASA Technical Reports Server (NTRS)

Jhabvala, M.; Reuter, D.; Choi, K.; Sundaram, M.; Jhabvala, C.; La, A.; Waczynski, A.; Bundas, J.

2011-01-01

The Thermal Infrared Sensor (TIRS) is a QWIP based instrument intended to supplement the Operational Land Imager (OLI) for the Landsat Data Continuity Mission (LDCM). The TIRS instrument is a dual channel far infrared imager with the two bands centered at 10.8 m and 12.0 m. The focal plane assembly (FPA) consists of three 640x512 GaAs Quantum Well Infrared Photodetector (QWIP) arrays precisely mounted to a silicon carrier substrate that is mounted on an invar baseplate. The two spectral bands are defined by bandpass filters mounted in close proximity to the detector surfaces. The focal plane operating temperature is 43K. The QWIP arrays are hybridized to Indigo ISC9803 readout integrated circuits (ROICs). Two varieties of QWIP detector arrays are being developed for this project, a corrugated surface structure QWIP and a grating surface structure QWIP. This paper will describe the TIRS system noise equivalent temperature difference sensitivity as it affects the QWIP focal plane performance requirements: spectral response, dark current, conversion efficiency, read noise, temperature stability, pixel uniformity, optical crosstalk and pixel yield. Additional mechanical constraints as well as qualification through Technology Readiness Level 6 (TRL 6) will also be discussed.

CMOS foveal image sensor chip

NASA Technical Reports Server (NTRS)

Scott, Peter (Inventor); Sridhar, Ramalingam (Inventor); Bandera, Cesar (Inventor); Xia, Shu (Inventor)

2002-01-01

A foveal image sensor integrated circuit comprising a plurality of CMOS active pixel sensors arranged both within and about a central fovea region of the chip. The pixels in the central fovea region have a smaller size than the pixels arranged in peripheral rings about the central region. A new photocharge normalization scheme and associated circuitry normalizes the output signals from the different size pixels in the array. The pixels are assembled into a multi-resolution rectilinear foveal image sensor chip using a novel access scheme to reduce the number of analog RAM cells needed. Localized spatial resolution declines monotonically with offset from the imager's optical axis, analogous to biological foveal vision.

MOS Circuitry Would Detect Low-Energy Charged Particles

NASA Technical Reports Server (NTRS)

Sinha, Mahadeva; Wadsworth, Mark

2003-01-01

Metal oxide semiconductor (MOS) circuits for measuring spatially varying intensities of beams of low-energy charged particles have been developed. These circuits are intended especially for use in measuring fluxes of ions with spatial resolution along the focal planes of mass spectrometers. Unlike prior mass spectrometer focal-plane detectors, these MOS circuits would not be based on ion-induced generation of electrons, and photons; instead, they would be based on direct detection of the electric charges of the ions. Hence, there would be no need for microchannel plates (for ion-to-electron conversion), phosphors (for electron-to-photon conversion), and photodetectors (for final detection) -- components that degrade spatial resolution and contribute to complexity and size. The developmental circuits are based on linear arrays of charge-coupled devices (CCDs) with associated readout circuitry (see figure). They resemble linear CCD photodetector arrays, except that instead of a photodetector, each pixel contains a capacitive charge sensor. The capacitor in each sensor comprises two electrodes (typically made of aluminum) separated by a layer of insulating material. The exposed electrode captures ions and accumulates their electric charges during signal-integration periods.

Continuous-time ΣΔ ADC with implicit variable gain amplifier for CMOS image sensor.

PubMed

Tang, Fang; Bermak, Amine; Abbes, Amira; Benammar, Mohieddine Amor

2014-01-01

This paper presents a column-parallel continuous-time sigma delta (CTSD) ADC for mega-pixel resolution CMOS image sensor (CIS). The sigma delta modulator is implemented with a 2nd order resistor/capacitor-based loop filter. The first integrator uses a conventional operational transconductance amplifier (OTA), for the concern of a high power noise rejection. The second integrator is realized with a single-ended inverter-based amplifier, instead of a standard OTA. As a result, the power consumption is reduced, without sacrificing the noise performance. Moreover, the variable gain amplifier in the traditional column-parallel read-out circuit is merged into the front-end of the CTSD modulator. By programming the input resistance, the amplitude range of the input current can be tuned with 8 scales, which is equivalent to a traditional 2-bit preamplification function without consuming extra power and chip area. The test chip prototype is fabricated using 0.18 μm CMOS process and the measurement result shows an ADC power consumption lower than 63.5 μW under 1.4 V power supply and 50 MHz clock frequency.

NeuroSeek dual-color image processing infrared focal plane array

NASA Astrophysics Data System (ADS)

McCarley, Paul L.; Massie, Mark A.; Baxter, Christopher R.; Huynh, Buu L.

1998-09-01

Several technologies have been developed in recent years to advance the state of the art of IR sensor systems including dual color affordable focal planes, on-focal plane array biologically inspired image and signal processing techniques and spectral sensing techniques. Pacific Advanced Technology (PAT) and the Air Force Research Lab Munitions Directorate have developed a system which incorporates the best of these capabilities into a single device. The 'NeuroSeek' device integrates these technologies into an IR focal plane array (FPA) which combines multicolor Midwave IR/Longwave IR radiometric response with on-focal plane 'smart' neuromorphic analog image processing. The readout and processing integrated circuit very large scale integration chip which was developed under this effort will be hybridized to a dual color detector array to produce the NeuroSeek FPA, which will have the capability to fuse multiple pixel-based sensor inputs directly on the focal plane. Great advantages are afforded by application of massively parallel processing algorithms to image data in the analog domain; the high speed and low power consumption of this device mimic operations performed in the human retina.

Method and apparatus of high dynamic range image sensor with individual pixel reset

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Pain, Bedabrata (Inventor); Fossum, Eric R. (Inventor)

2001-01-01

A wide dynamic range image sensor provides individual pixel reset to vary the integration time of individual pixels. The integration time of each pixel is controlled by column and row reset control signals which activate a logical reset transistor only when both signals coincide for a given pixel.

Optical Demonstration of a Medical Imaging System with an EMCCD-Sensor Array for Use in a High Resolution Dynamic X-ray Imager

PubMed Central

Qu, Bin; Huang, Ying; Wang, Weiyuan; Sharma, Prateek; Kuhls-Gilcrist, Andrew T.; Cartwright, Alexander N.; Titus, Albert H.; Bednarek, Daniel R.; Rudin, Stephen

2011-01-01

Use of an extensible array of Electron Multiplying CCDs (EMCCDs) in medical x-ray imager applications was demonstrated for the first time. The large variable electronic-gain (up to 2000) and small pixel size of EMCCDs provide effective suppression of readout noise compared to signal, as well as high resolution, enabling the development of an x-ray detector with far superior performance compared to conventional x-ray image intensifiers and flat panel detectors. We are developing arrays of EMCCDs to overcome their limited field of view (FOV). In this work we report on an array of two EMCCD sensors running simultaneously at a high frame rate and optically focused on a mammogram film showing calcified ducts. The work was conducted on an optical table with a pulsed LED bar used to provide a uniform diffuse light onto the film to simulate x-ray projection images. The system can be selected to run at up to 17.5 frames per second or even higher frame rate with binning. Integration time for the sensors can be adjusted from 1 ms to 1000 ms. Twelve-bit correlated double sampling AD converters were used to digitize the images, which were acquired by a National Instruments dual-channel Camera Link PC board in real time. A user-friendly interface was programmed using LabVIEW to save and display 2K × 1K pixel matrix digital images. The demonstration tiles a 2 × 1 array to acquire increased-FOV stationary images taken at different gains and fluoroscopic-like videos recorded by scanning the mammogram simultaneously with both sensors. The results show high resolution and high dynamic range images stitched together with minimal adjustments needed. The EMCCD array design allows for expansion to an M×N array for arbitrarily larger FOV, yet with high resolution and large dynamic range maintained. PMID:23505330

A thermal sensor and switch based on a plasma polymer/ZnO suspended nanobelt bimorph structure

NASA Astrophysics Data System (ADS)

He, -Hau, Jr.; Singamaneni, Srikanth; Ho, Chih H.; Lin, Yen-Hsi; McConney, Michael E.; Tsukruk, Vladimir V.

2009-02-01

The combination of design and subsequent fabrication of organic/inorganic nanostructures creates an effective way to combine the favorable traits of both to achieve a desired device performance. We demonstrate a miniature electrical read-out, and a sensitive temperature sensor/switch, based on a ZnO nanobelt/plasma-polymerized benzonitrile bimorph structure. A new read-out technique based on the change in the electric current flowing through the bimorph and the contact pad has been employed, replacing the conventional cumbersome piezoresistive method or tedious optical alignment. The thermal sensor demonstrated here has great prospects for thermal switching and triggered detection owing to the relative ease in the fabrication of arrays and the direct electrical read-out.

Ground calibration of the spatial response and quantum efficiency of the CdZnTe hard x-ray detectors for NuSTAR

NASA Astrophysics Data System (ADS)

Grefenstette, Brian W.; Bhalerao, Varun; Cook, W. Rick; Harrison, Fiona A.; Kitaguchi, Takao; Madsen, Kristin K.; Mao, Peter H.; Miyasaka, Hiromasa; Rana, Vikram

2017-08-01

Pixelated Cadmium Zinc Telluride (CdZnTe) detectors are currently flying on the Nuclear Spectroscopic Telescope ARray (NuSTAR) NASA Astrophysics Small Explorer. While the pixel pitch of the detectors is ≍ 605 μm, we can leverage the detector readout architecture to determine the interaction location of an individual photon to much higher spatial accuracy. The sub-pixel spatial location allows us to finely oversample the point spread function of the optics and reduces imaging artifacts due to pixelation. In this paper we demonstrate how the sub-pixel information is obtained, how the detectors were calibrated, and provide ground verification of the quantum efficiency of our Monte Carlo model of the detector response.

Developments in Time-Division Multiplexing of X-ray Transition-Edge Sensors

NASA Astrophysics Data System (ADS)

Doriese, W. B.; Morgan, K. M.; Bennett, D. A.; Denison, E. V.; Fitzgerald, C. P.; Fowler, J. W.; Gard, J. D.; Hays-Wehle, J. P.; Hilton, G. C.; Irwin, K. D.; Joe, Y. I.; Mates, J. A. B.; O'Neil, G. C.; Reintsema, C. D.; Robbins, N. O.; Schmidt, D. R.; Swetz, D. S.; Tatsuno, H.; Vale, L. R.; Ullom, J. N.

2016-07-01

Time-division multiplexing (TDM) is a mature scheme for the readout of arrays of transition-edge sensors (TESs). TDM is based on superconducting-quantum-interference-device (SQUID) current amplifiers. Multiple spectrometers based on gamma-ray and X-ray microcalorimeters have been operated with TDM readout, each at the scale of 200 sensors per spectrometer, as have several astronomical cameras with thousands of sub-mm or microwave bolometers. Here we present the details of two different versions of our TDM system designed to read out X-ray TESs. The first has been field-deployed in two 160-sensor (8 columns × 20 rows) spectrometers and four 240-sensor (8 columns × 30 rows) spectrometers. It has a three-SQUID-stage architecture, switches rows every 320 ns, and has total readout noise of 0.41 μ Φ 0 / surd Hz. The second, which is presently under development, has a two-SQUID-stage architecture, switches rows every 160 ns, and has total readout noise of 0.19 μ Φ 0 / surd Hz. Both quoted noise values are non-multiplexed and referred to the first-stage SQUID. In a demonstration of this new architecture, a multiplexed 1-column × 32-row array of NIST TESs achieved average energy resolution of 2.55± 0.01 eV at 6 keV.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hasegawa, S.

The CMS pixel phase-1 upgrade project replaces the current pixel detector with an upgraded system with faster readout electronics during the extended year-end technical stop of 2016/2017. New electronics prototypes for the system have been developed, and tests in a realistic environment for a comprehensive evaluation are needed. A full readout test stand with either the same hardware as used in the current CMS pixel detector or the latest prototypes of upgrade electronics has been built. The setup enables the observation and investigation of a jitter increase in the data line associated with trigger rate increases. This effect is duemore » to the way in which the clock and trigger distribution is implemented in CMS. A new prototype of the electronics with a PLL based on a voltage controlled quartz crystal oscillator (QPLL), which works as jitter filter, in the clock distribution path was produced. With the test stand, it was confirmed that the jitter increase is not seen with the prototype, and also good performance was confirmed at the expected detector operation temperature ($-$20 °C).« less

Ethanol Microsensors with a Readout Circuit Manufactured Using the CMOS-MEMS Technique

PubMed Central

Yang, Ming-Zhi; Dai, Ching-Liang

2015-01-01

The design and fabrication of an ethanol microsensor integrated with a readout circuit on-a-chip using the complementary metal oxide semiconductor (CMOS)-microelectro-mechanical system (MEMS) technique are investigated. The ethanol sensor is made up of a heater, a sensitive film and interdigitated electrodes. The sensitive film is tin dioxide that is prepared by the sol-gel method. The heater is located under the interdigitated electrodes, and the sensitive film is coated on the interdigitated electrodes. The sensitive film needs a working temperature of 220 °C. The heater is employed to provide the working temperature of sensitive film. The sensor generates a change in capacitance when the sensitive film senses ethanol gas. A readout circuit is used to convert the capacitance variation of the sensor into the output frequency. Experiments show that the sensitivity of the ethanol sensor is 0.9 MHz/ppm. PMID:25594598

Ethanol microsensors with a readout circuit manufactured using the CMOS-MEMS technique.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang

2015-01-14

The design and fabrication of an ethanol microsensor integrated with a readout circuit on-a-chip using the complementary metal oxide semiconductor (CMOS)-microelectro -mechanical system (MEMS) technique are investigated. The ethanol sensor is made up of a heater, a sensitive film and interdigitated electrodes. The sensitive film is tin dioxide that is prepared by the sol-gel method. The heater is located under the interdigitated electrodes, and the sensitive film is coated on the interdigitated electrodes. The sensitive film needs a working temperature of 220 °C. The heater is employed to provide the working temperature of sensitive film. The sensor generates a change in capacitance when the sensitive film senses ethanol gas. A readout circuit is used to convert the capacitance variation of the sensor into the output frequency. Experiments show that the sensitivity of the ethanol sensor is 0.9 MHz/ppm.

A Binary Offset Effect in CCD Readout and Its Impact on Astronomical Data

NASA Astrophysics Data System (ADS)

Boone, K.; Aldering, G.; Copin, Y.; Dixon, S.; Domagalski, R. S.; Gangler, E.; Pecontal, E.; Perlmutter, S.

2018-06-01

We have discovered an anomalous behavior of CCD readout electronics that affects their use in many astronomical applications. An offset in the digitization of the CCD output voltage that depends on the binary encoding of one pixel is added to pixels that are read out one, two, and/or three pixels later. One result of this effect is the introduction of a differential offset in the background when comparing regions with and without flux from science targets. Conventional data reduction methods do not correct for this offset. We find this effect in 16 of 22 instruments investigated, covering a variety of telescopes and many different front-end electronics systems. The affected instruments include LRIS and DEIMOS on the Keck telescopes, WFC3 UVIS and STIS on HST, MegaCam on CFHT, SNIFS on the UH88 telescope, GMOS on the Gemini telescopes, HSC on Subaru, and FORS on VLT. The amplitude of the introduced offset is up to 4.5 ADU per pixel, and it is not directly proportional to the measured ADU level. We have developed a model that can be used to detect this “binary offset effect” in data, and correct for it. Understanding how data are affected and applying a correction for the effect is essential for precise astronomical measurements.

An Efficient, FPGA-Based, Cluster Detection Algorithm Implementation for a Strip Detector Readout System in a Time Projection Chamber Polarimeter

NASA Technical Reports Server (NTRS)

Gregory, Kyle J.; Hill, Joanne E. (Editor); Black, J. Kevin; Baumgartner, Wayne H.; Jahoda, Keith

2016-01-01

A fundamental challenge in a spaceborne application of a gas-based Time Projection Chamber (TPC) for observation of X-ray polarization is handling the large amount of data collected. The TPC polarimeter described uses the APV-25 Application Specific Integrated Circuit (ASIC) to readout a strip detector. Two dimensional photoelectron track images are created with a time projection technique and used to determine the polarization of the incident X-rays. The detector produces a 128x30 pixel image per photon interaction with each pixel registering 12 bits of collected charge. This creates challenging requirements for data storage and downlink bandwidth with only a modest incidence of photons and can have a significant impact on the overall mission cost. An approach is described for locating and isolating the photoelectron track within the detector image, yielding a much smaller data product, typically between 8x8 pixels and 20x20 pixels. This approach is implemented using a Microsemi RT-ProASIC3-3000 Field-Programmable Gate Array (FPGA), clocked at 20 MHz and utilizing 10.7k logic gates (14% of FPGA), 20 Block RAMs (17% of FPGA), and no external RAM. Results will be presented, demonstrating successful photoelectron track cluster detection with minimal impact to detector dead-time.

A UVM simulation environment for the study, optimization and verification of HL-LHC digital pixel readout chips

NASA Astrophysics Data System (ADS)

Marconi, S.; Conti, E.; Christiansen, J.; Placidi, P.

2018-05-01

The operating conditions of the High Luminosity upgrade of the Large Hadron Collider are very demanding for the design of next generation hybrid pixel readout chips in terms of particle rate, radiation level and data bandwidth. To this purpose, the RD53 Collaboration has developed for the ATLAS and CMS experiments a dedicated simulation and verification environment using industry-consolidated tools and methodologies, such as SystemVerilog and the Universal Verification Methodology (UVM). This paper presents how the so-called VEPIX53 environment has first guided the design of digital architectures, optimized for processing and buffering very high particle rates, and secondly how it has been reused for the functional verification of the first large scale demonstrator chip designed by the collaboration, which has recently been submitted.

CMOS Active Pixel Sensor Technology and Reliability Characterization Methodology

NASA Technical Reports Server (NTRS)

Chen, Yuan; Guertin, Steven M.; Pain, Bedabrata; Kayaii, Sammy

2006-01-01

This paper describes the technology, design features and reliability characterization methodology of a CMOS Active Pixel Sensor. Both overall chip reliability and pixel reliability are projected for the imagers.

Katherine: Ethernet Embedded Readout Interface for Timepix3

NASA Astrophysics Data System (ADS)

Burian, P.; Broulím, P.; Jára, M.; Georgiev, V.; Bergmann, B.

2017-11-01

The Timepix3—the latest generation of hybrid particle pixel detectors of Medipix family—yields a lot of new possibilities, i.e. a high hit-rate, a time resolution of 1.56 ns, event data-driven readout mode, and the capability of measuring the Time-over-Threshold (ToT - energy) and the Time-of-Arrival (ToA) simultaneously. This paper introduces a newly developed readout device for the Timepix3, called "Katherine", featuring a Gigabit Ethernet interface. The primary benefit of the Katherine is the operation of Timepix3 at long distance (up to 100 m) from computer or server, which is advantageous for the installation at beam lines, where the access is difficult or where radiation levels are too high for human interventions. The maximal hit-rate is limited by the bandwidth of the Ethernet connection (peer-to-peer connection; up to 16 Mhit/s). Since the Katherine interface is equipped with a processor of high computational power (ARM Cortex-A9 dual-core processor), it permits the use as a stand-alone (autonomous) radiation detector. The key features of the device are described in detail. These are the implemented high voltage power supply offering both polarities of bias voltage (up to ± 300 V), the automatic data sending to a sever via SSH, the automatic compensation of ToA values from columns with shifted matrix clock, etc. A dedicated control software was developed, which can be used for the detector preparation (sensor equalization, the DACs dependency scan, and the THL scan) and measurement control. Measured energy spectra from photon fields are shown.

Workshop proceedings: Sensor systems for space astrophysics in the 21st century

NASA Technical Reports Server (NTRS)

1991-01-01

This proceedings provides a summary of the Astrotech 21 Sensor Technology Workshop. Topics covered include: high energy sensors, ultraviolet and visible sensors, direct infrared sensors, heterodyne submillimeter wave sensors, sensor readout electronics, and sensor cooler technology.

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

NASA Astrophysics Data System (ADS)

Poley, L.; Bloch, I.; Edwards, S.; Friedrich, C.; Gregor, I.-M.; Jones, T.; Lacker, H.; Pyatt, S.; Rehnisch, L.; Sperlich, D.; Wilson, J.

2016-05-01

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive used initially between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). However, this glue has several disadvantages, which motivated the search for an alternative. This paper presents a study of six ultra-violet (UV) cure glues and a glue pad for possible use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, thermal conduction and shear strength. Samples were thermally cycled, radiation hardness and corrosion resistance were also determined. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives than silver loaded glue. Results from electrical tests of first prototype modules constructed using these glues are presented.

New simulation and measurement results on gateable DEPFET devices

NASA Astrophysics Data System (ADS)

Bähr, Alexander; Aschauer, Stefan; Hermenau, Katrin; Herrmann, Sven; Lechner, Peter H.; Lutz, Gerhard; Majewski, Petra; Miessner, Danilo; Porro, Matteo; Richter, Rainer H.; Schaller, Gerhard; Sandow, Christian; Schnecke, Martina; Schopper, Florian; Stefanescu, Alexander; Strüder, Lothar; Treis, Johannes

2012-07-01

To improve the signal to noise level, devices for optical and x-ray astronomy use techniques to suppress background events. Well known examples are e.g. shutters or frame-store Charge Coupled Devices (CCDs). Based on the DEpleted P-channel Field Effect Transistor (DEPFET) principle a so-called Gatebale DEPFET detector can be built. Those devices combine the DEPFET principle with a fast built-in electronic shutter usable for optical and x-ray applications. The DEPFET itself is the basic cell of an active pixel sensor build on a fully depleted bulk. It combines internal amplification, readout on demand, analog storage of the signal charge and a low readout noise with full sensitivity over the whole bulk thickness. A Gatebale DEPFET has all these benefits and obviates the need for an external shutter. Two concepts of Gatebale DEPFET layouts providing a built-in shutter will be introduced. Furthermore proof of principle measurements for both concepts are presented. Using recently produced prototypes a shielding of the collection anode up to 1 • 10-4 was achieved. Predicted by simulations, an optimized geometry should result in values of 1 • 10-5 and better. With the switching electronic currently in use a timing evaluation of the shutter opening and closing resulted in rise and fall times of 100ns.

An Electronic-Nose Sensor Node Based on a Polymer-Coated Surface Acoustic Wave Array for Wireless Sensor Network Applications

PubMed Central

Tang, Kea-Tiong; Li, Cheng-Han; Chiu, Shih-Wen

2011-01-01

This study developed an electronic-nose sensor node based on a polymer-coated surface acoustic wave (SAW) sensor array. The sensor node comprised an SAW sensor array, a frequency readout circuit, and an Octopus II wireless module. The sensor array was fabricated on a large K2 128° YX LiNbO3 sensing substrate. On the surface of this substrate, an interdigital transducer (IDT) was produced with a Cr/Au film as its metallic structure. A mixed-mode frequency readout application specific integrated circuit (ASIC) was fabricated using a TSMC 0.18 μm process. The ASIC output was connected to a wireless module to transmit sensor data to a base station for data storage and analysis. This sensor node is applicable for wireless sensor network (WSN) applications. PMID:22163865

An electronic-nose sensor node based on a polymer-coated surface acoustic wave array for wireless sensor network applications.

PubMed

Tang, Kea-Tiong; Li, Cheng-Han; Chiu, Shih-Wen

2011-01-01

This study developed an electronic-nose sensor node based on a polymer-coated surface acoustic wave (SAW) sensor array. The sensor node comprised an SAW sensor array, a frequency readout circuit, and an Octopus II wireless module. The sensor array was fabricated on a large K(2) 128° YX LiNbO3 sensing substrate. On the surface of this substrate, an interdigital transducer (IDT) was produced with a Cr/Au film as its metallic structure. A mixed-mode frequency readout application specific integrated circuit (ASIC) was fabricated using a TSMC 0.18 μm process. The ASIC output was connected to a wireless module to transmit sensor data to a base station for data storage and analysis. This sensor node is applicable for wireless sensor network (WSN) applications.

Characterization of pixel sensor designed in 180 nm SOI CMOS technology

NASA Astrophysics Data System (ADS)

Benka, T.; Havranek, M.; Hejtmanek, M.; Jakovenko, J.; Janoska, Z.; Marcisovska, M.; Marcisovsky, M.; Neue, G.; Tomasek, L.; Vrba, V.

2018-01-01

A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices were integrated into the prototype chip, which differ by the pixel pitch of 50 μm and 100 μm. The X-CHIP-02 contains several test structures, which are useful for characterization of individual blocks. The sensitive part of the pixel integrated in the handle wafer is one of the key structures designed for testing. The purpose of this structure is to determine the capacitance of the sensitive part (diode in the MAPS pixel). The measured capacitance is 2.9 fF for 50 μm pixel pitch and 4.8 fF for 100 μm pixel pitch at -100 V (default operational voltage). This structure was used to measure the IV characteristics of the sensitive diode. In this work, we report on a circuit designed for precise determination of sensor capacitance and IV characteristics of both pixel types with respect to X-ray irradiation. The motivation for measurement of the sensor capacitance was its importance for the design of front-end amplifier circuits. The design of pixel elements, as well as circuit simulation and laboratory measurement techniques are described. The experimental results are of great importance for further development of MAPS sensors in this technology.

A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

NASA Technical Reports Server (NTRS)

Mendis, Sunetra K.; Kemeny, Sabrina E.; Fossum, Eric R.

1993-01-01

A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

The phase 1 upgrade of the CMS Pixel Front-End Driver

NASA Astrophysics Data System (ADS)

Friedl, M.; Pernicka, M.; Steininger, H.

2010-12-01

The pixel detector of the CMS experiment at the LHC is read out by analog optical links, sending the data to 9U VME Front-End Driver (FED) boards located in the electronics cavern. There are plans for the phase 1 upgrade of the pixel detector (2016) to add one more layer, while significantly cutting down the overall material budget. At the same time, the optical data transmission will be replaced by a serialized digital scheme. A plug-in board solution with a high-speed digital optical receiver has been developed for the Pixel-FED readout boards and will be presented along with first tests of the future optical link.

Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line

NASA Astrophysics Data System (ADS)

Pohl, D.-L.; Hemperek, T.; Caicedo, I.; Gonella, L.; Hügging, F.; Janssen, J.; Krüger, H.; Macchiolo, A.; Owtscharenko, N.; Vigani, L.; Wermes, N.

2017-06-01

Pixel sensors using 8'' CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 × 1015 neq cm-2. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.

Fast, High-Precision Readout Circuit for Detector Arrays

NASA Technical Reports Server (NTRS)

Rider, David M.; Hancock, Bruce R.; Key, Richard W.; Cunningham, Thomas J.; Wrigley, Chris J.; Seshadri, Suresh; Sander, Stanley P.; Blavier, Jean-Francois L.

2013-01-01

The GEO-CAPE mission described in NASA's Earth Science and Applications Decadal Survey requires high spatial, temporal, and spectral resolution measurements to monitor and characterize the rapidly changing chemistry of the troposphere over North and South Americas. High-frame-rate focal plane arrays (FPAs) with many pixels are needed to enable such measurements. A high-throughput digital detector readout integrated circuit (ROIC) that meets the GEO-CAPE FPA needs has been developed, fabricated, and tested. The ROIC is based on an innovative charge integrating, fast, high-precision analog-to-digital circuit that is built into each pixel. The 128×128-pixel ROIC digitizes all 16,384 pixels simultaneously at frame rates up to 16 kHz to provide a completely digital output on a single integrated circuit at an unprecedented rate of 262 million pixels per second. The approach eliminates the need for off focal plane electronics, greatly reducing volume, mass, and power compared to conventional FPA implementations. A focal plane based on this ROIC will require less than 2 W of power on a 1×1-cm integrated circuit. The ROIC is fabricated of silicon using CMOS technology. It is designed to be indium bump bonded to a variety of detector materials including silicon PIN diodes, indium antimonide (InSb), indium gallium arsenide (In- GaAs), and mercury cadmium telluride (HgCdTe) detector arrays to provide coverage over a broad spectral range in the infrared, visible, and ultraviolet spectral ranges.