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Sample records for plasma deposited heparin-like

  1. Plasma deposition of tungsten

    SciTech Connect

    Greenberg, K.E.

    1986-12-01

    Tungsten films were plasma-deposited using an abnormal glow discharge through a mixture of tungsten hexafluoride, hydrogen, and argon. The films adhered well to silicon, silicon dioxide, gallium arsenide, and aluminum substrates placed directly on the discharge cathode. Typical deposition rates were on the order of 160 Angstroms/minute with as-deposited film resistivities of 40 to 70 microohm-cm. The tungsten was analyzed using a number of techniques including x-ray diffraction, scanning electron microscopy, and Auger spectroscopy. Low-resistivity (<10 microohm-cm) films that adhered well to silicon dioxide were obtained with a two-step process utilizing plasma deposition and conventional chemical vapor deposition.

  2. Dynamic properties of biologically active synthetic heparin-like hexasaccharides.

    PubMed

    Angulo, Jesús; Hricovíni, Milos; Gairi, Margarida; Guerrini, Marco; de Paz, José Luis; Ojeda, Rafael; Martín-Lomas, Manuel; Nieto, Pedro M

    2005-10-01

    A complete study of the dynamics of two synthetic heparin-like hexasaccharides, D-GlcNHSO3-6-SO4-alpha-(1-->4)-L-IdoA-2-SO4-alpha-(1-->4)-D-GlcNHSO3-6-SO4-alpha-(1-->4)-L-IdoA-2-SO4-alpha-(1-->4)-D-GlcNHSO3-6-SO4-alpha-(1-->4)-L-IdoA-2-SO4-alpha-1-->iPr (1) and -->4)-L-IdoA-2-SO4-alpha-(1-->4)-D-GlcNHAc-6-SO4-alpha-(1-->4)-L-IdoA-alpha-(1-->4)-D-GlcNHSO3-alpha-(1-->4)-L-IdoA-2-SO4-alpha-1-->iPr (2), has been performed using 13C-nuclear magnetic resonance (NMR) relaxation parameters, T1, T2, and heteronuclear nuclear Overhauser effect (NOEs). Compound 1 is constituted from sequences corresponding to the major polysaccharide heparin region, while compound 2 contains a sequence never found in natural heparin. They differ from each other only in sulphation patterns, and are capable of stimulating fibroblast growth factors (FGFs)-1 induced mitogenesis. Both oligosaccharides exhibit a remarkable anisotropic overall motion in solution as revealed by their anisotropic ratios (tau /tau||), 4.0 and 3.0 respectively. This is a characteristic behaviour of natural glycosaminoglycans (GAG) which has also been observed for the antithrombin (AT) binding pentasaccharide D-GlcNHSO3-6-SO4-alpha-(1-->4)-D-GlcA-beta-(1-->4)-D-GlcNHSO3-(3,6-SO4)-alpha-(1-->4)-L-IdoA-2-SO4-alpha-(1-->4)-D-GlcNHSO3-6-SO4-alpha-1-->Me (3) (Hricovíni, M., Guerrini, M., Torri, G., Piani, S., and Ungarelli, F. (1995) Conformational analysis of heparin epoxide in aqueous solution. An NMR relaxation study. Carbohydr. Res., 277, 11-23). The motional properties observed for 1 and 2 provide additional support to the suitability of these compounds as heparin models in agreement with previous structural (de Paz, J.L., Angulo, J., Lassaletta, J.M., Nieto, P.M., Redondo-Horcajo, M., Lozano, R.M., Jiménez-Gallego, G., and Martín-Lomas, M. (2001) The activation of fibroblast growth factors by heparin: synthesis, structure and biological activity of heparin-like oligosaccharides. Chembiochem, 2, 673-685; Ojeda, R

  3. Synthesis of heparin-like oligosaccharides on polymer supports.

    PubMed

    Ojeda, Rafael; Terentí, Olimpia; de Paz, José-Luis; Martín-Lomas, Manuel

    2004-01-01

    The biological functions of a variety of proteins are regulated by heparan sulfate glycosaminoglycans. In order to facilitate the elucidation of the molecular basis of glycosaminoglycan-protein interactions we have developed syntheses of heparin-like oligosaccharides on polymer supports. A completely stereoselective strategy previously developed by us for the synthesis of these oligosaccharides in solution has been extended to the solid phase using an acceptor-bound approach. Both a soluble polymer support and a polyethylene glycol-grafted polystyrene resin have been used and different strategies for the attachment of the acceptor to the support have been explored. The attachment of fully protected disaccharide building blocks to a soluble support through the carboxylic group of the uronic acid unit by a succinic ester linkage, the use of trichloroacetimidates as glycosylating agents and of a functionalized Merryfield type resin for the capping process allowed for the construction of hexasaccharide and octasaccharide fragments containing the structural motif of the regular region of heparin. This strategy may facilitate the synthesis of glycosaminoglycan oligosaccharides by using the required building blocks in the glycosylation sequence.

  4. [Endogenous heparin-like syndrome: analysis of clinical observations].

    PubMed

    Bulanov, A Iu; Iatskov, K V; Shulutko, E M; Glukhova, T E; Andreĭchenko, S A

    2012-01-01

    One of the reasons for non-surgical bleeding is heparin-like syndrome (HLS), under which is understanded presence of heparin effect in the absence of it's exogenous application. The role of endogenous heparins perform glycosaminoglycans -- biologically active substances. HLS is accompanied by endothelium damage and discussed in the network of the systemic inflammatory response syndrome (SIRS). HLS is described in liver future, sepsis, pregnancy and a number of hemoblastosis. Hypocoagulation effect of endogenous heparin localizates in X coagulation factor. The main method of diagnosis - thromboelastography. The use of a specific heparin antidote - Protamine sulfate has not confirmed clinical efficacy. Priority direction in the therapy of - methods of "shunt hemostasis". In this paper, we present the analysis of observations of 4 patients with developed endogenous HLS. In 2 cases (combination of sepsis with hepatic failure in one patient and initial thrombophilia in other) HLS has been accompanied by massive bleeding (massive hemothoraxc with haemorrhagic shock, a massive intraoperative blood loss). For HLS relief in these cases was used prothrombine complex concentrate (PCC) (in the 1st case), recombinant VIIa factor (in the 2nd case). In other cases, HLS (in a patient with multiple myeloma and childbirth in the postpartum period), haemorrhagic syndrome was not so expressed, the treatment was carried out with FFP transfusion.

  5. Synthesis and structural study of two new heparin-like hexasaccharides.

    PubMed

    Lucas, Ricardo; Angulo, Jesús; Nieto, Pedro M; Martín-Lomas, Manuel

    2003-07-07

    Two new heparin-like hexasaccharides, 5 and 6, have been synthesised using a convergent block strategy and their solution conformations have been determined by NMR spectroscopy and molecular modelling. Both hexasaccharides contain the basic structural motif of the regular region of heparin but with negative charge distributions which have been designed to get insight into the mechanism of fibroblast growth factors (FGFs) activation.

  6. Liquid injection plasma deposition method and apparatus

    DOEpatents

    Kong, P.C.; Watkins, A.D.

    1999-05-25

    A liquid injection plasma torch deposition apparatus for depositing material onto a surface of a substrate may comprise a plasma torch for producing a jet of plasma from an outlet nozzle. A plasma confinement tube having an inlet end and an outlet end and a central bore therethrough is aligned with the outlet nozzle of the plasma torch so that the plasma jet is directed into the inlet end of the plasma confinement tube and emerges from the outlet end of the plasma confinement tube. The plasma confinement tube also includes an injection port transverse to the central bore. A liquid injection device connected to the injection port of the plasma confinement tube injects a liquid reactant mixture containing the material to be deposited onto the surface of the substrate through the injection port and into the central bore of the plasma confinement tube. 8 figs.

  7. Liquid injection plasma deposition method and apparatus

    DOEpatents

    Kong, Peter C.; Watkins, Arthur D.

    1999-01-01

    A liquid injection plasma torch deposition apparatus for depositing material onto a surface of a substrate may comprise a plasma torch for producing a jet of plasma from an outlet nozzle. A plasma confinement tube having an inlet end and an outlet end and a central bore therethrough is aligned with the outlet nozzle of the plasma torch so that the plasma jet is directed into the inlet end of the plasma confinement tube and emerges from the outlet end of the plasma confinement tube. The plasma confinement tube also includes an injection port transverse to the central bore. A liquid injection device connected to the injection port of the plasma confinement tube injects a liquid reactant mixture containing the material to be deposited onto the surface of the substrate through the injection port and into the central bore of the plasma confinement tube.

  8. Plasma deposited rider rings for hot displacer

    DOEpatents

    Kroebig, Helmut L.

    1976-01-01

    A hot cylinder for a cryogenic refrigerator having two plasma spray deposited rider rings of a corrosion and abrasion resistant material provided in the rider ring grooves, wherein the rider rings are machined to the desired diameter and width after deposition. The rider rings have gas flow flats machined on their outer surface.

  9. On coating adhesion during impulse plasma deposition

    NASA Astrophysics Data System (ADS)

    Nowakowska-Langier, Katarzyna; Zdunek, Krzysztof; Chodun, Rafal; Okrasa, Sebastian; Kwiatkowski, Roch; Malinowski, Karol; Składnik-Sadowska, Elzbieta; Sadowski, Marek J.

    2014-05-01

    The impulse plasma deposition (IPD) technique is the only method of plasma surface engineering (among plasma-based technologies) that allows a synthesis of layers upon a cold unheated substrate and which ensures a good adhesion. This paper presents a study of plasma impacts upon a copper substrate surface during the IPD process. The substrate was exposed to pulsed N2/Al plasma streams during the synthesis of AlN layers. For plasma-material interaction diagnostics, the optical emission spectroscopy method was used. Our results show that interactions of plasma lead to sputtering of the substrate material. It seems that the obtained adhesion of the layers is the result of a complex surface mechanism combined with the effects of pulsed plasma energy impacts upon the unheated substrate. An example of such a result is the value of the critical load for the Al2O3 layer, which was measured by the scratch-test method to be above 40 N.

  10. Monitoring particle growth in deposition plasmas

    NASA Astrophysics Data System (ADS)

    Schlebrowski, T.; Bahre, H.; Böke, M.; Winter, J.

    2013-12-01

    Plasma-enhanced chemical vapor deposition methods are frequently used to deposit barrier layers, e.g. on polymers for food packaging. These plasmas may suffer from particle (dust) formation. We report on a flexible monitoring system for dust. It is based on scanning a 3D plasma volume for particles by laser light scattering. The lower size limit of particles detected in the presented system is 20 nm. We report on existence diagrams for obtaining dust free or dust loaded capacitively or inductively coupled rf-plasmas in C2H2 depending on pressure, flow and rf-power. We further present growth rates for dust in these plasmas and show that monodisperse particles are only obtained during the first growth cycle.

  11. Plasma distribution of cathodic ARC deposition system

    SciTech Connect

    Anders, S.; Raoux, S.; Krishnan, K.; MacGill, R.A.; Brown, I.G.

    1996-08-01

    The plasma distribution using a cathodic arc plasma source with and without magnetic macroparticle filter has been determined by depositing on a transparent plastic substrate and measuring the film absorption. It was found that the width of the distribution depends on the arc current, and it also depends on the cathode material which leads to a spatial separation of the elements when an alloy cathode is used. By applying a magnetic multicusp field near the exit of the magnetic filter, it was possible to modify the plasma distribution and obtain a flat plasma profile with a constant and homogeneous elemental distribution.

  12. Plasma forces on deposited particles

    NASA Astrophysics Data System (ADS)

    Heijmans, Lucas; Nijdam, Sander

    2016-09-01

    A plasma can have many effects on a substrate. In this contribution we focus on its effects on micrometer sized particles on the substrate. We are especially interested in forces acting on these particles. These have been suggested to be responsible for the lunar glow observed by the Apollo mission astronauts. They have recently also attracted interest as a possible cleaning mechanism for the high-tech industry. We will present experimental measurements of the forces acting on a particle on a substrate under influence of a plasma. To this extend we have developed two specialised experimental setups. They use extreme accelerations (up to one million times the earth gravitational acceleration) to balance forces on the particle. We will show quantitative measurements of the plasma force effects, and show what underlying physical effects cause them.

  13. Plasma deposition of amorphous metal alloys

    DOEpatents

    Hays, Auda K.

    1986-01-01

    Amorphous metal alloy coatings are plasma-deposited by dissociation of vapors of organometallic compounds and metalloid hydrides in the presence of a reducing gas, using a glow discharge. Tetracarbonylnickel, phosphine, and hydrogen constitute a typical reaction mixture of the invention, yielding a NiPC alloy.

  14. Plasma deposition of amorphous metal alloys

    DOEpatents

    Hays, A.K.

    1979-07-18

    Amorphous metal alloy coatings are plasma-deposited by dissociation of vapors of organometallic compounds and metalloid hydrides in the presence of a reducing gas, using a glow discharge. Tetracarbonylnickel, phosphine, and hydrogen constitute a typical reaction mixture of the invention, yielding a NiPC alloy.

  15. Diagnostics in ? helicon plasmas for ? deposition

    NASA Astrophysics Data System (ADS)

    Granier, A.; Nicolazo, F.; Vallée, C.; Goullet, A.; Turban, G.; Grolleau, B.

    1997-05-01

    0963-0252/6/2/008/img3 and 0963-0252/6/2/008/img4 helicon plasmas used for plasma enhanced chemical vapour deposition of 0963-0252/6/2/008/img5 films are investigated in the 1 - 10 mTorr pressure and 0 - 800 W rf power ranges. The positive oxygen ions are analysed by energy selective mass spectrometry and Langmuir probes. The oxygen atom concentration is monitored by actinometry and ionization threshold mass spectrometry. In oxygen plasmas it is shown that 0963-0252/6/2/008/img6 is the major positive ion, and that the oxygen molecules are far from being completely dissociated, due to a very high oxygen atom recombination frequency on the reactor walls. The dissociation degree increases with the rf power reaching 10% at 500 W. In 0963-0252/6/2/008/img4 plasmas, the plasma density and electron temperature decrease as the TEOS fraction increases. In contrast, the degree of oxygen dissociation increases sharply with the addition of a few per cent TEOS, is maximum for about 5% TEOS and decreases as TEOS fraction is further increased. In a 95:5 0963-0252/6/2/008/img4 plasma (5 mTorr, 300 W) the fluxes of oxygen positive ions and atoms impinging onto a floating substrate are estimated to be 0963-0252/6/2/008/img9 and 0963-0252/6/2/008/img10 respectively. Under these plasma conditions, near-stoichiometric 0963-0252/6/2/008/img11 films, with low OH content, are deposited at ambient temperature. The corresponding atom to ion flux ratio is about 250, which suggests the dominant role of oxygen atoms in the deposition kinetics. The comparison of the compositions of layers grown in a 5 mTorr 95:5 0963-0252/6/2/008/img4 plasma at two rf powers confirms the major role of oxygen atoms.

  16. Plasma-Modified Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Larrabee, Thomas; Prokes, Sharka

    2015-09-01

    PEALD is known to grow thin films with differing properties from those grown purely via chemical reactions, or thermal ALD processes. However, material properties are still limited when compared to films grown by other deposition techniques. We have used non-growth plasma steps in each ALD cycle to modify properties, in a technique we refer to as plasma-modified ALD. To study how non-growth plasma steps modify properties, we have grown metal oxides with various plasma processing steps from CCPs of Ar, O2, N2, and H2 gases at relatively high pressures of 1-2 mbar. A grid is used to screen ion bombardment of the samples within a commercial Beneq TFS-200 reactor, making this plasma configuration indirect, but not remote. Several properties show significant differences between the films grown with and without these additional steps. These altered properties include crystalline orientation as indicated by XRD, plasmon resonances, photoluminescence, electron paramagnetic resonance, optical dispersion, mobilities, carrier concentrations, and resistivities. Selected plasma-initiated modifications to ALD-grown oxides of zinc, vanadium, and hafnium, and their anticipated applications in novel materials systems will be presented. NRC Postdoc at the Naval Research Laboratory.

  17. Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition.

    NASA Astrophysics Data System (ADS)

    Sharma, Uttam; Chauhan, Sachin S.; Sharma, Jayshree; Sanyasi, A. K.; Ghosh, J.; Choudhary, K. K.; Ghosh, S. K.

    2016-10-01

    The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS.

  18. Plasma-enhanced chemical vapor deposition of tungsten films

    NASA Astrophysics Data System (ADS)

    Chu, J. K.; Tang, C. C.; Hess, D. W.

    1982-07-01

    High-purity films of tungsten are deposited from tungsten hexafluoride and hydrogen using plasma-enhanced deposition (PED). At 400 °C deposition temperature, resistivities of ˜40 μΩ cm are attained. After annealing at 1100 °C, the resistivity falls to ˜7 μΩ cm. Below 400 °C, the as-deposited film stress is <6×109 dynes/cm2. Tensile, unlike tungsten, molybdenum films deposited by PED displayed high resistivities.

  19. Plasma deposition of organic thin films: Control of film chemistry

    SciTech Connect

    Ratner, B.D.

    1993-12-31

    Plasma deposition of thin, polymeric films represent a versatile surface modification technology. Although these thin films are exploited for many applications, complaints heard about plasma deposited films are that their structures are uncharacterizable, that organic functionality is lost in their production and that reproducibility is difficult. Recently, new methods for film production, reactor control and surface characterization have led to well characterized plasma deposited thin polymeric films (PDTPF) with defined structure and organic functionality. Such PDTPF often closely resemble conventionally prepared homopolymers. Methods that can be used to control the chemistry of PDTPF are the minimization of the plasma power, pulsing the RF field to reduce the {open_quotes}plasma on{close_quotes} time, use of a Faraday cage to reduce electron bombardment, positioning the sample downfield from the glow zone, the use of monomers containing polymerizable double bonds and the use of a cold substrate to condense vapor simultaneously with plasma deposition.

  20. Plasma reactor for deposition of carbon nanowalls at atmospheric pressure

    NASA Astrophysics Data System (ADS)

    Dimitrov, Zh; Mitev, D.; Kiss'ovski, Zh

    2016-10-01

    In this study a novel plasma reactor for deposition of carbon nanowalls at atmospheric pressure is constructed and characterized. A low power microwave discharge is used as a plasma source and working gas of Ar/H2/CH4 gas mixture. The substrate is heated by plasma flame and its temperature is in the range 600-700 C. The chemical composition of the plasma and the gas mixture effect on the concentration of the various particles in the plasma is investigated by optical emission spectroscopy. The emission spectrum of the plasma jet in Ar/H2/CH4 mixture shows the presence of carbon (Swan band) and an intensive line of CH (388 nm), which are necessary species for deposition of carbon nanostructures. Additional voltage in the range from -20 V to -100 V is applied in order to ensure the vertical growth of graphene walls. Results of deposited carbon nanostructures on metal substrate are shown.

  1. Plasma sprayed and electrospark deposited zirconium metal diffusion barrier coatings

    SciTech Connect

    Hollis, Kendall J; Pena, Maria I

    2010-01-01

    Zirconium metal coatings applied by plasma spraying and electrospark deposition (ESD) have been investigated for use as diffusion barrier coatings on low enrichment uranium fuel for research nuclear reactors. The coatings have been applied to both stainless steel as a surrogate and to simulated nuclear fuel uranium-molybdenum alloy substrates. Deposition parameter development accompanied by coating characterization has been performed. The structure of the plasma sprayed coating was shown to vary with transferred arc current during deposition. The structure of ESD coatings was shown to vary with the capacitance of the deposition equipment.

  2. Modified drug release using atmospheric pressure plasma deposited siloxane coatings

    NASA Astrophysics Data System (ADS)

    Dowling, D. P.; Maher, S.; Law, V. J.; Ardhaoui, M.; Stallard, C.; Keenan, A.

    2016-09-01

    This pilot study evaluates the potential of atmospheric plasma polymerised coatings to modify the rate of drug release from polymeric substrates. The antibiotic rifampicin was deposited in a prototype multi-layer drug delivery system, consisting of a nebulized layer of active drug between a base layer of TEOS deposited on a plastic substrate (polystyrene) and an overlying layer of plasma polymerised PDMS. The polymerised TEOS and PDMS layers were deposited using a helium atmospheric plasma jet system. Elution of rifampicin was measured using UV-VIS spectroscopy, in addition to a antimicrobial well diffusion assay with an established indicator organism. The multi-layered plasma deposited coatings significantly extended the duration of release of the rifampicin from 24 h for the uncoated polymer to 144 h for the coated polymer.

  3. Vapor Phase Deposition Using Plasma Spray-PVD™

    NASA Astrophysics Data System (ADS)

    von Niessen, K.; Gindrat, M.; Refke, A.

    2010-01-01

    Plasma spray—physical vapor deposition (PS-PVD) is a low pressure plasma spray technology to deposit coatings out of the vapor phase. PS-PVD is a part of the family of new hybrid processes recently developed by Sulzer Metco AG (Switzerland) on the basis of the well-established low pressure plasma spraying (LPPS) technology. Included in this new process family are plasma spray—chemical vapor deposition (PS-CVD) and plasma spray—thin film (PS-TF) processes. In comparison to conventional vacuum plasma spraying and LPPS, these new processes use a high energy plasma gun operated at a work pressure below 2 mbar. This leads to unconventional plasma jet characteristics which can be used to obtain specific and unique coatings. An important new feature of PS-PVD is the possibility to deposit a coating not only by melting the feed stock material which builds up a layer from liquid splats, but also by vaporizing the injected material. Therefore, the PS-PVD process fills the gap between the conventional PVD technologies and standard thermal spray processes. The possibility to vaporize feedstock material and to produce layers out of the vapor phase results in new and unique coating microstructures. The properties of such coatings are superior to those of thermal spray and EB-PVD coatings. This paper reports on the progress made at Sulzer Metco to develop functional coatings build up from vapor phase of oxide ceramics and metals.

  4. A study of reactive plasma deposited thin films

    NASA Technical Reports Server (NTRS)

    Gilchrist, J.; Williams, E.

    1986-01-01

    A state-of-the-art research laboratory was established to grow and characterize amorphous thin films that are useful in semi-conductor devices. Two film systems, nitride films and silicon dioxide films were studied. Over seventy deposition runs for nitride films were made. The films were deposited on silicon substrate using plasma enhanced chemical vapor deposition. It was found that the uniformity of the films were affected by the location of the film on the platen.

  5. Reactive deposition of tungsten and titanium carbides by induction plasma

    NASA Astrophysics Data System (ADS)

    Jiang, X. L.; Gitzhofer, F.; Boulos, M. I.; Tiwari, R.

    1995-05-01

    A study is reported on the use of induction plasma technology for the preparation of dense free-standing deposits of tungsten carbide and titanium carbide from metallic powders and methane. Phase analysis by X-ray diffraction indicates that primary carburization of the particles takes place in-flight giving rise to the formation of W2C and TiC(1 - x). Secondary carburization occurs in the deposits resulting in the formation of tungsten and titanium carbides. Microstructures revealed by optical and scanning electron microscopy show uniform small grains of the carbides. The reactive plasma spray-formed tungsten carbide shows transgranular fracture, while pure tungsten deposits show intergranular fracture.

  6. Staphylococcus epidermidis adhesion to films deposited from hydroxyethylmethacrylate plasma.

    PubMed

    Morra, M; Cassinelli, C

    1996-06-01

    The adhesion of S. epidermidis ATCC 35984 strain on polystyrene (PS) disks coated by films deposited from hydroxyethylmethacrylate (HEMA) plasma was evaluated and compared to adhesion on untreated PS and oxygen-plasma-treated PS. Films were deposited keeping constant the monomer flow rate while the discharge power ranged from 40-100 W in order to obtain coating with different surface properties. Surface chemistry, energetics, and morphology were evaluated by Electron Spectroscopy for Chemical Analysis (ESCA), contact angle measurement, and Atomic Force Microscopy (AFM), respectively. Bacteria adhered more to the plasma-deposited or plasma-treated surfaces than to untreated PS, but no significant difference was recorded among the samples obtained using different deposition conditions. According to the surface energetic analysis, plasma-deposited and plasma-treated surfaces bear a strong Lewis-base character, so it is possible to hypothesize a marked contribution of electron donor-electron acceptor interactions to the mechanism(s) controlling adhesion between synthetic and bacterial surfaces.

  7. Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane

    SciTech Connect

    Weeks, Stephen Nowling, Greg; Fuchigami, Nobi; Bowes, Michael; Littau, Karl

    2016-01-15

    Progress in transistor scaling has increased the demands on the material properties of silicon nitride (SiN{sub x}) thin films used in device fabrication and at the same time placed stringent restrictions on the deposition conditions employed. Recently, low temperature plasma enhanced atomic layer deposition has emerged as a viable technique for depositing these films with a thermal budget compatible with semiconductor processing at sub-32 nm technology nodes. For these depositions, it is desirable to use precursors that are free from carbon and halogens that can incorporate into the film. Beyond this, it is necessary to develop processing schemes that minimize the wet etch rate of the film as it will be subjected to wet chemical processing in subsequent fabrication steps. In this work, the authors introduce low temperature deposition of SiN{sub x} using neopentasilane [NPS, (SiH{sub 3}){sub 4}Si] in a plasma enhanced atomic layer deposition process with a direct N{sub 2} plasma. The growth with NPS is compared to a more common precursor, trisilylamine [TSA, (SiH{sub 3}){sub 3 }N] at identical process conditions. The wet etch rates of the films deposited with NPS are characterized at different plasma conditions and the impact of ion energy is discussed.

  8. Diamond film deposition using microwave plasmas under low pressures

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Pool, F. S.; Rich, D. H.

    1991-01-01

    Microwave plasma depositions of diamond films have been investigated under low pressures of 10 mTorr to 10 Torr, at low substrate temperatures of 400 to 750 C, using high methane concentrations of 5 to 15 percent and oxygen concentrations of 5 to 10 percent in hydrogen plasmas. The deposition system consists of a microwave plasma chamber, a downstream deposition chamber, and a RF induction-heated sample stage. The deposition system can be operated in either high-pressure microwave or electron cyclotron resonance (ECR) modes by varying the sample stage position. Cathodoluminescence (CL) studies on diamond films deposited at 10 Torr pressure show that CL emissions at 430, 480, 510, 530, 560, 570 and 740 nm can be employed to characterize the quality of diamond films. High-quality, well-faceted diamond films have been deposited at 10 Torr and 600 C using 5 percent CH4 and 5 percent O2 in H2 plasmas; CL measurements on these films show very low N impurities and no detectable Si impurities. Diamond nucleation on SiC has been demonstrated by depositing well-faceted diamond crystallites on SiC-coated Si substrates.

  9. Nanoparticle formation and thin film deposition in aniline containing plasmas

    NASA Astrophysics Data System (ADS)

    Pattyn, Cedric; Dias, Ana; Hussain, Shahzad; Strunskus, Thomas; Stefanovic, Ilija; Boulmer-Leborgne, Chantal; Lecas, Thomas; Kovacevic, Eva; Berndt, Johannes

    2016-09-01

    This contribution deals with plasma based polymerization processes in mixtures of argon and aniline. The investigations are performed in a capacitively coupled RF discharge (in pulsed and continuous mode) and concern both the observed formation of nanoparticles in the plasma volume and the deposition of films. The latter process was used for the deposition of ultra-thin layers on different kind of nanocarbon materials (nanotubes and free standing graphene). The analysis of the plasma and the plasma chemistry (by means of mass spectroscopy and in-situ FTIR spectroscopy) is accompanied by several ex-situ diagnostics of the obtained materials which include NEXAFS and XPS measurements as well as Raman spectroscopy and electron microscopy. The decisive point of the investigations concern the preservation of the original monomer structure during the plasma polymerization processes and the stability of the thin films on the different substrates.

  10. Film synthesis on powders by cathodic arc plasma deposition

    SciTech Connect

    Anders, A.; Anders, S.; Brown, I.G.; Ivanov, I.C.

    1995-04-01

    Cathodic arc plasma deposition was used to coat Al{sub 2}O{sub 3} powder (mesh size 60) with platinum. The power particles were moved during deposition using a mechanical system operating at a resonance frequency of 20 Hz. Scanning electron microscopy and Auger electron microscopy show that all particles are completely coated with a platinum film having a thickness of about 100 nm. The actual deposition time was only 20 s, thus the deposition rate was very high (5 nm/s).

  11. Heparin-like properties of sulfated alginates with defined sequences and sulfation degrees.

    PubMed

    Arlov, Øystein; Aachmann, Finn Lillelund; Sundan, Anders; Espevik, Terje; Skjåk-Bræk, Gudmund

    2014-07-14

    Sulfated glycosaminoglycans have a vast range of protein interactions relevant to the development of new biomaterials and pharmaceuticals, but their characterization and application is complicated mainly due to a high structural variability and the relative difficulty to isolate large quantities of structurally homogeneous samples. Functional and versatile analogues of heparin/heparan sulfate can potentially be created from sulfated alginates, which offer structure customizability through targeted enzymatic epimerization and precise tuning of the sulfation degree. Alginates are linear polysaccharides consisting of β-D-mannuronic acid (M) and α-L-guluronic acid (G), derived from brown algae and certain bacteria. The M/G ratio and distribution of blocks are critical parameters for the physical properties of alginates and can be modified in vitro using mannuronic-C5-epimerases to introduce sequence patterns not found in nature. Alginates with homogeneous sequences (poly-M, poly-MG, and poly-G) and similar molecular weights were chemically sulfated and structurally characterized by the use of NMR and elemental analysis. These sulfated alginates were shown to bind and displace HGF from the surface of myeloma cells in a manner similar to heparin. We observed dependence on the sulfation degree (DS) as well as variation in efficacy based on the alginate monosaccharide sequence, relating to relative flexibility and charge density in the polysaccharide chains. Co-incubation with human plasma showed complement compatibility of the alginates and lowering of soluble terminal complement complex levels by sulfated alginates. The sulfated polyalternating (poly-MG) alginate proved to be the most reproducible in terms of precise sulfation degrees and showed the greatest relative degree of complement inhibition and HGF interaction, maintaining high activity at low DS values.

  12. Deposition of electrochromic tungsten oxide thin films by plasma-enhanced chemical vapor deposition

    SciTech Connect

    Henley, W.B.; Sacks, G.J.

    1997-03-01

    Use of plasma-enhanced chemical vapor deposition (PECVD) for electrochromic WO{sub 3} film deposition is investigated. Oxygen, hydrogen, and tungsten hexafluoride were used as source gases. Reactant gas flow was investigated to determine the effect on film characteristics. High quality optical films were obtained at deposition rates on the order of 100 {angstrom}/s. Higher deposition rates were attainable but film quality and optical coherence degraded. Atomic emission spectroscopy (AES), was used to provide an in situ assessment of the plasma deposition chemistry. Through AES, it is shown that the hydrogen gas flow is essential to the deposition of the WO{sub 3} film. Oxygen gas flow and tungsten hexafluoride gas flow must be approximately equal for high quality films.

  13. A high temperature, plasma-assisted chemical vapor deposition system

    SciTech Connect

    Brusasco, R.M.; Britten, J.A.; Thorsness, C.B.; Scrivener, M.S.; Unites, W.G.; Campbell, J.H. ); Johnson, W.L. )

    1990-02-01

    We have designed and built a high-temperature, plasma-assisted, chemical vapor deposition system to deposit multilayer optical coatings of SiO{sub 2} and doped-SiO{sub 2} flat substrates. The coater concept and design is an outgrowth of our recent work with Schott Glasswerke demonstrating the use of plasma assisted CVD to prepare very high damage threshold optical coatings. The coater is designed to deposit up to several thousand alternating quarterwave layers of SiO{sub 2} and doped SiO{sub 2} substrate at deposition rates up to several microns per minute. The substrate is resistively heated to about 1000{degree}C during the deposition phase of the process. The plasma is driven by a 13.56 MHz RF unit capable of producing power densities of up to 140 W cm{sup {minus}3} in the reaction zone. The coater is designed to be adaptable to microwave generated plasmas, as well as RF. Reactant gas flow rates of up to 10 slm can be achieved at a 10 tar operating pressure. Reactants consist of O{sub 2}, SiCl{sub 4} and a volatile halogenated dopant. These gases react in the plasma volume producing SiO{sub 2} with dopant concentrations of up to a few percent. A variable dopant concentration is used to produce index differences between adjacent optical layers.

  14. The activation of fibroblast growth factors by heparin: synthesis, structure, and biological activity of heparin-like oligosaccharides.

    PubMed

    de Paz, J L; Angulo, J; Lassaletta, J M; Nieto, P M; Redondo-Horcajo, M; Lozano, R M; Giménez-Gallego, G; Martín-Lomas, M

    2001-09-03

    An effective strategy has been designed for the synthesis of oligosaccharides of different sizes structurally related to the regular region of heparin; this is illustrated by the preparation of hexasaccharide 1 and octasaccharide 2. This synthetic strategy provides the oligosaccharide sequence containing a D-glucosamine unit at the nonreducing end that is not available either by enzymatic or chemical degradation of heparin. It may permit, after slight modifications, the preparation of oligosaccharide fragments with different charge distribution as well. NMR spectroscopy and molecular dynamics simulations have shown that the overall structure of 1 in solution is a stable right-hand helix with four residues per turn. Hexasaccharide 1 and, most likely, octasaccharide 2 are, therefore, chemically well-defined structural models of naturally occurring heparin-like oligosaccharides for use in binding and biological activity studies. Both compounds 1 and 2 induce the mitogenic activity of acid fibroblast growth factor (FGF1), with the half-maximum activating concentration of 2 being equivalent to that of heparin. Sedimentation equilibrium analysis with compound 2 suggests that heparin-induced FGF1 dimerization is not an absolute requirement for biological activity.

  15. Oligomeric self-association of basic fibroblast growth factor in the absence of heparin-like glycosaminoglycans.

    PubMed Central

    Davis, J C; Venkataraman, G; Shriver, Z; Raj, P A; Sasisekharan, R

    1999-01-01

    Basic fibroblast growth factor (FGF-2) represents a class of heparin-binding growth factors that are stored in the extracellular matrix attached to heparin-like glycosaminoglycans (HLGAGs). It has been proposed that cell surface HLGAGs have a central role in the biological activity of FGF-2, presumably by inducing dimers or oligomers of FGF-2 and leading to the dimerization or oligomerization of FGF receptor and hence signal transduction. We have previously proposed that FGF-2 possesses a natural tendency to self-associate to form FGF-2 dimers and oligomers; HLGAGs would enhance FGF-2 self-association. Here, through a combination of spectroscopic, chemical cross-linking and spectrometric techniques, we provide direct evidence for the self-association of FGF-2 in the absence of HLGAGs, defying the notion that HLGAGs induce FGF-2 oligomerization. Further, the addition of HLGAGs seems to enhance significantly the FGF-2 oligomerization process without affecting the relative percentages of FGF-2 dimers, trimers or oligomers. FGF-2 self-association is consistent with FGF-2's possessing biological activity both in the presence and in the absence of HLGAGs; this leads us to propose that FGF-2 self-association enables FGF-2 to signal both in the presence and in the absence of HLGAGs. PMID:10417324

  16. Solid coatings deposited from liquid methyl methacrylate via Plasma Polymerization

    NASA Astrophysics Data System (ADS)

    Wurlitzer, Lisa; Maus-Friedrichs, Wolfgang; Dahle, Sebastian

    2016-09-01

    The polymerization of methyl methacrylate via plasma discharges is well known today. Usually, plasma-enhanced chemical vapor deposition (PECVD) is used to deposit polymer coatings. Solid coatings are formed out of the liquid phase from methyl methacrylate via dielectric barrier discharge. The formation of the coating proceeds in the gas and the liquid phase. To learn more about the reactions in the two phases, the coatings from MMA monomer will be compared to those from MMA resin. Finally, attenuated total reflection infrared spectroscopy, confocal laser scanning microscopy and X-ray photoelectron spectroscopy are employed to characterize the solid coatings. In conclusion, the plasma enhanced chemical solution deposition is compared to the classical thermal polymerization of MMA.

  17. Plasma deposited silicon nitride for indium phosphide encapsulation

    NASA Technical Reports Server (NTRS)

    Valco, G. J.; Kapoor, V. J.; Biedenbender, M. D.; Williams, W. D.

    1989-01-01

    The composition and the annealing characteristics of plasma-deposited silicon-nitride encapsulating films on the ion-implanted InP substrates were investigated, using two different substrate-cleaning procedures (organic solvents and HF or HIO3 solutions) prior to encapsulation. The effect of plasma deposition of silicon nitride on the InP substrates was assessed through the current-voltage characteristics of Schottky diodes. Results of XPS analyses showed that the cleaning procedure that employed HF solution left less oxygen on the InP surface than the procedure involving HIO3. No chemical interaction between the film and the substrate was observed before or after annealing.

  18. Basic fibroblast growth factor binds to subendothelial extracellular matrix and is released by heparitinase and heparin-like molecules

    SciTech Connect

    Bashkin, P.; Doctrow, S.; Klagsbrun, M.; Svahn, C.M.; Folkman, J.; Vlodavsky, I. )

    1989-02-21

    Basic fibroblast growth factor (bFGF) exhibits specific binding to the extracellular matrix (ECM) produced by cultured endothelial cells. Binding was saturable as a function both of time and of concentration of {sup 125}I-bFGF. Scatchard analysis of FGF binding revealed the presence of about 1.5 x 10{sup 12} binding sites/mm{sup 2} ECM with an apparent k{sub D} of 610 nM. FGF binds to heparan sulfate (HS) in ECM as evidenced by (i) inhibition of binding in the presence of heparin or HS at 0.1-1 {mu}g/mL, but not by chondroitin sulfate, keratan sulfate, or hyaluronic acid at 10 {mu}g/mL, (ii) lack of binding to ECM pretreated with heparitinase, but not with chondroitinase ABC, and (iii) rapid release of up to 90% of ECM-bound FGF by exposure to heparin, HS, or heparitinase, but not to chondroitin sulfate, keratan sulfate, hyaluronic acid, or chondroitinase ABC. Oligosaccharides derived from depolymerized heparin, and as small as the tetrasaccharide, released the ECM-bound FGF, but there was little or no release of FGF by modified nonanticoagulant heparins such as totally desulfated heparin, N-desulfated heparin, and N-acetylated heparin. FGF released from ECM was biologically active, as indicated by its stimulation of cell proliferation and DNA synthesis in vascular endothelial cells and 3T3 fibroblasts. Similar results were obtained in studies on release of endogenous FGF-like mitogenic activity from Descement's membranes of bovine corneas. It is suggested that ECM storage and release of bFGF provide a novel mechanism for regulation of capillary blood vessel growth. Whereas ECM-bound FGF may be prevented from acting on endothelial cells, its displacement by heparin-like molecules and/or HS-degrading enzymes may elicit a neovascular response.

  19. Plasma-Powder Feedstock Interaction During Plasma Spray-Physical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Anwaar, Aleem; Wei, Lianglinag; Guo, Hongbo; Zhang, Baopeng

    2017-01-01

    Plasma spray-physical vapor deposition is a new process developed to produce coatings from the vapor phase. To achieve deposition from the vapor phase, the plasma-feedstock interaction inside the plasma torch, i.e., from the powder injection point to the nozzle exit, is critical. In this work, the plasma characteristics and the momentum and heat transfer between the plasma and powder feedstock at different torch input power levels were investigated theoretically to optimize the net plasma torch power, among other important factors such as the plasma gas composition, powder feed rate, and carrier gas. The plasma characteristics were calculated using the CEA2 code, and the plasma-feedstock interaction was studied inside the torch nozzle at low-pressure (20-25 kPa) conditions. A particle dynamics model was introduced to compute the particle velocity, coupled with Xi Chen's drag model for nonevaporating particles. The results show that the energy transferred to the particles and the coating morphology are greatly influenced by the plasma gas characteristics and the particle dynamics inside the nozzle. The heat transfer between the plasma gas and feedstock material increased with the net torch power up to an optimum at 64 kW, at which a maximum of 3.4% of the available plasma energy was absorbed by the feedstock powder. Experimental results using agglomerated 7-8 wt.% yttria-stabilized zirconia (YSZ) powder as feedstock material confirmed the theoretical predictions.

  20. Plasma-Powder Feedstock Interaction During Plasma Spray-Physical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Anwaar, Aleem; Wei, Lianglinag; Guo, Hongbo; Zhang, Baopeng

    2017-02-01

    Plasma spray-physical vapor deposition is a new process developed to produce coatings from the vapor phase. To achieve deposition from the vapor phase, the plasma-feedstock interaction inside the plasma torch, i.e., from the powder injection point to the nozzle exit, is critical. In this work, the plasma characteristics and the momentum and heat transfer between the plasma and powder feedstock at different torch input power levels were investigated theoretically to optimize the net plasma torch power, among other important factors such as the plasma gas composition, powder feed rate, and carrier gas. The plasma characteristics were calculated using the CEA2 code, and the plasma-feedstock interaction was studied inside the torch nozzle at low-pressure (20-25 kPa) conditions. A particle dynamics model was introduced to compute the particle velocity, coupled with Xi Chen's drag model for nonevaporating particles. The results show that the energy transferred to the particles and the coating morphology are greatly influenced by the plasma gas characteristics and the particle dynamics inside the nozzle. The heat transfer between the plasma gas and feedstock material increased with the net torch power up to an optimum at 64 kW, at which a maximum of 3.4% of the available plasma energy was absorbed by the feedstock powder. Experimental results using agglomerated 7-8 wt.% yttria-stabilized zirconia (YSZ) powder as feedstock material confirmed the theoretical predictions.

  1. Plasma deposited diamond-like carbon films for large neutralarrays

    SciTech Connect

    Brown, I.G.; Blakely, E.A.; Bjornstad, K.A.; Galvin, J.E.; Monteiro, O.R.; Sangyuenyongpipat, S.

    2004-07-15

    To understand how large systems of neurons communicate, we need to develop methods for growing patterned networks of large numbers of neurons. We have found that diamond-like carbon thin films formed by energetic deposition from a filtered vacuum arc carbon plasma can serve as ''neuron friendly'' substrates for the growth of large neural arrays. Lithographic masks can be used to form patterns of diamond-like carbon, and regions of selective neuronal attachment can form patterned neural arrays. In the work described here, we used glass microscope slides as substrates on which diamond-like carbon was deposited. PC-12 rat neurons were then cultured on the treated substrates and cell growth monitored. Neuron growth showed excellent contrast, with prolific growth on the treated surfaces and very low growth on the untreated surfaces. Here we describe the vacuum arc plasma deposition technique employed, and summarize results demonstrating that the approach can be used to form large patterns of neurons.

  2. Plasma deposition of polymer composite films incorporating nanocellulose whiskers

    NASA Astrophysics Data System (ADS)

    Samyn, P.; Airoudj, A.; Laborie, M.-P.; Mathew, A. P.; Roucoules, V.

    2011-11-01

    In a trend for sustainable engineering and functionalization of surfaces, we explore the possibilities of gas phase processes to deposit nanocomposite films. From an analysis of pulsed plasma polymerization of maleic anhydride in the presence of nanocellulose whiskers, it seems that thin nanocomposite films can be deposited with various patterns. By specifically modifying plasma parameters such as total power, duty cycle, and monomer gas pressure, the nanocellulose whiskers are either incorporated into a buckled polymer film or single nanocellulose whiskers are deposited on top of a polymeric film. The density of the latter can be controlled by modifying the exact positioning of the substrate in the reactor. The resulting morphologies are evaluated by optical microscopy, AFM, contact angle measurements and ellipsometry.

  3. Characterization of the WC coatings deposited by plasma spraying

    NASA Astrophysics Data System (ADS)

    Benea, M. L.; Benea, L. P.

    2015-06-01

    Tungsten monocarbide (WC) is deposited using a plasma jet on the martensitic noncorrosive steel support (Z12CNDV12), in three different thicknesses.The characteristics of the coatings are determined by: its chemical composition, optical microscopy, RX analysis, tensile adhesion strength, Vickers hardness, the nature and the processing degree of the substrate and the deposition conditions.The method used for determining the behaviour in a corrosive environment of the WC coatings deposited by plasma spraying consists in measuring the electrochemical potential difference between the coating and the substrate, which are immersed in a solution containing NaCl as a corrosive agent. The experimental results are then mathematically processed in order to determine a law and the mechanisms involved.

  4. Plasma and Ion Assistance in Physical Vapor Deposition: AHistorical Perspective

    SciTech Connect

    Anders, Andre

    2007-02-28

    Deposition of films using plasma or plasma-assist can betraced back surprisingly far, namely to the 18th century for arcs and tothe 19th century for sputtering. However, only since the 1960s thecoatings community considered other processes than evaporation for largescale commercial use. Ion Plating was perhaps the first importantprocess, introducing vapor ionization and substrate bias to generate abeam of ions arriving on the surface of the growing film. Ratherindependently, cathodic arc deposition was established as an energeticcondensation process, first in the former Soviet Union in the 1970s, andin the 1980s in the Western Hemisphere. About a dozen various ion-basedcoating technologies evolved in the last decades, all characterized byspecific plasma or ion generation processes. Gridded and gridless ionsources were taken from space propulsion and applied to thin filmdeposition. Modeling and simulation have helped to make plasma and ionseffects to be reasonably well understood. Yet--due to the complex, oftennon-linear and non-equilibrium nature of plasma and surfaceinteractions--there is still a place for the experience plasma"sourcerer."

  5. Caracterisation of Titanium Nitride Layers Deposited by Reactive Plasma Spraying

    NASA Astrophysics Data System (ADS)

    Roşu, Radu Alexandru; Şerban, Viorel-Aurel; Bucur, Alexandra Ioana; Popescu, Mihaela; Uţu, Dragoş

    2011-01-01

    Forming and cutting tools are subjected to the intense wear solicitations. Usually, they are either subject to superficial heat treatments or are covered with various materials with high mechanical properties. In recent years, thermal spraying is used increasingly in engineering area because of the large range of materials that can be used for the coatings. Titanium nitride is a ceramic material with high hardness which is used to cover the cutting tools increasing their lifetime. The paper presents the results obtained after deposition of titanium nitride layers by reactive plasma spraying (RPS). As deposition material was used titanium powder and as substratum was used titanium alloy (Ti6Al4V). Macroscopic and microscopic (scanning electron microscopy) images of the deposited layers and the X ray diffraction of the coatings are presented. Demonstration program with layers deposited with thickness between 68,5 and 81,4 μm has been achieved and presented.

  6. Very high frequency plasma reactant for atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Oh, Il-Kwon; Yoo, Gilsang; Yoon, Chang Mo; Kim, Tae Hyung; Yeom, Geun Young; Kim, Kangsik; Lee, Zonghoon; Jung, Hanearl; Lee, Chang Wan; Kim, Hyungjun; Lee, Han-Bo-Ram

    2016-11-01

    Although plasma-enhanced atomic layer deposition (PE-ALD) results in several benefits in the formation of high-k dielectrics, including a low processing temperature and improved film properties compared to conventional thermal ALD, energetic radicals and ions in the plasma cause damage to layer stacks, leading to the deterioration of electrical properties. In this study, the growth characteristics and film properties of PE-ALD Al2O3 were investigated using a very-high-frequency (VHF) plasma reactant. Because VHF plasma features a lower electron temperature and higher plasma density than conventional radio frequency (RF) plasma, it has a larger number of less energetic reaction species, such as radicals and ions. VHF PE-ALD Al2O3 shows superior physical and electrical properties over RF PE-ALD Al2O3, including high growth per cycle, excellent conformality, low roughness, high dielectric constant, low leakage current, and low interface trap density. In addition, interlayer-free Al2O3 on Si was achieved in VHF PE-ALD via a significant reduction in plasma damage. VHF PE-ALD will be an essential process to realize nanoscale devices that require precise control of interfaces and electrical properties.

  7. Plasma deposition of antimicrobial coating on organic polymer

    NASA Astrophysics Data System (ADS)

    Rżanek-Boroch, Zenobia; Dziadczyk, Paulina; Czajkowska, Danuta; Krawczyk, Krzysztof; Fabianowski, Wojciech

    2013-02-01

    Organic materials used for packing food products prevent the access of microorganisms or gases, like oxygen or water vapor. To prolong the stability of products, preservatives such as sulfur dioxide, sulfites, benzoates, nitrites and many other chemical compounds are used. To eliminate or limit the amount of preservatives added to food, so-called active packaging is sought for, which would limit the development of microorganisms. Such packaging can be achieved, among others, by plasma modification of a material to deposit on its surface substances inhibiting the growth of bacteria. In this work plasma modification was carried out in barrier discharge under atmospheric pressure. Sulfur dioxide or/and sodium oxide were used as the coating precursors. As a result of bacteriological studies it was found that sulfur containing coatings show a 16% inhibition of Salmonella bacteria growth and 8% inhibition of Staphylococcus aureus bacteria growth. Sodium containing coatings show worse (by 10%) inhibiting properties. Moreover, films with plasma deposited coatings show good sealing properties against water vapor. Contribution to the Topical Issue "13th International Symposium on High Pressure Low Temperature Plasma Chemistry (Hakone XIII)", Edited by Nicolas Gherardi, Henryca Danuta Stryczewska and Yvan Ségui.

  8. Investigations on the Nature of Ceramic Deposits in Plasma Spray-Physical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    He, W.; Mauer, G.; Gindrat, M.; Wäger, R.; Vaßen, R.

    2017-01-01

    In Plasma Spray-Physical Vapor Deposition (PS-PVD) process, major fractions of the feedstock powder can be evaporated so that coatings are deposited mainly from the vapor phase. In this work, Computational Fluid Dynamics (CFD) results indicate that such evaporation occurs significantly in the plasma torch nozzle and even nucleation and condensation of zirconia is highly possible there. Experimental work has been performed to investigate the nature of the deposits in the PS-PVD process, in particular coatings from condensate vapor and nano-sized clusters produced at two spraying distances of 1000 mm and 400 mm. At long spraying distance, columns in the coatings have pyramidal tops and very sharp faceted microstructures. When the spraying distance is reduced to 400 mm, the tops of columns become relatively flat and a faceted structure is not recognizable. XRD patterns show obvious preferred orientations of (110) and (002) in the coatings sprayed at 400 mm but only limited texture in the coatings sprayed at 1000 mm. Meanwhile, a non-line of sight coating was also investigated, which gives an example for pure vapor deposition. Based on these analyses, a vapor and cluster depositions are suggested to further explain the formation mechanisms of high-quality columnar-structured PS-PVD thermal barrier coatings which have already shown excellent performance in cyclic lifetime test.

  9. Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

    NASA Technical Reports Server (NTRS)

    Cappelli, Mark A.

    1999-01-01

    In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species

  10. Deposition of plasma-polymerized hydroxyethyl methacrylate (HEMA) on silicon in presence of argon plasma

    NASA Astrophysics Data System (ADS)

    Bodas, Dhananjay S.; Desai, Shrojal M.; Gangal, S. A.

    2005-05-01

    2-hydroxyethyl methacrylate (HEMA) has been deposited onto the surface of silicon substrate (thickness = 500 μm) using plasma polymerization technique. Polymerization process was carried out in an in-house developed inductively coupled plasma polymerization setup. The depositions were carried out using RF power supply (13.56 MHz) at power of 75 W for 10 and 40 min. The RF supply was coupled to the inductance through a matching network. The effect of plasma polymerization (surface grafting) on the degree of surface modification has been investigated. The chemical changes on the polymer backbone are followed from the results of Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS), which show the peaks corresponding to the functional groups of the HEMA polymerized onto the silicon surface. The morphology of the modified surfaces has also been investigated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The hydrophilicity was determined from the water contact angle measurements.

  11. Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition

    SciTech Connect

    Hoffmann, Lukas Theirich, Detlef; Hasselmann, Tim; Räupke, André; Schlamm, Daniel; Riedl, Thomas

    2016-01-15

    This paper reports on aluminum oxide (Al{sub 2}O{sub 3}) thin film gas permeation barriers fabricated by atmospheric pressure atomic layer deposition (APPALD) using trimethylaluminum and an Ar/O{sub 2} plasma at moderate temperatures of 80 °C in a flow reactor. The authors demonstrate the ALD growth characteristics of Al{sub 2}O{sub 3} films on silicon and indium tin oxide coated polyethylene terephthalate. The properties of the APPALD-grown layers (refractive index, density, etc.) are compared to that deposited by conventional thermal ALD at low pressures. The films films deposited at atmospheric pressure show water vapor transmission rates as low as 5 × 10{sup −5} gm{sup −2}d{sup −1}.

  12. Energy deposition in low-power coaxial plasma thrusters

    NASA Technical Reports Server (NTRS)

    Myers, R. M.; Kelly, A. J.; Jahn, R. G.

    1991-01-01

    An experimental examination of energy deposition in self-field, coaxial plasma thrusters revealed that the thrust efficiency ranged from 2-9 percent and that the dominant losses resulted from electrode heating and propellant ionization. Sensible enthalpy and radiative losses were negligible. Thruster specific impulse increased with current, ranging from 550-1750 seconds. Spectroscopic studies of the plume plasma showed that the electron temperature ranged from 0.5-2.5 eV and that the dominant species were singly and doubly ionized argon. Attempts to raise thruster efficiency by increasing the chamber pressure resulted in reduced electrode losses and lowered I(sp), but the thrust efficiency decreased because of a current redistribution that lowered the thrust beyond expectations.

  13. Magnetically controlled deposition of metals using gas plasma. Final report

    SciTech Connect

    1998-04-02

    This is the first phase of a project that has the objective to develop a method of spraying materials on a substrate in a controlled manner to eliminate the waste and hazardous material generation inherent in present plating processes. The project is considering plasma spraying of metal on a substrate using magneto-hydrodynamics to control the plasma/metal stream. The process being developed is considering the use of commercially available plasma torches to generate the plasma/metal stream. The plasma stream is collimated, and directed using magnetic forces to the extent required for precise control of the deposition material. The project will be completed in phases. Phase one of the project, the subject of this grant, is the development of an analytical model that can be used to determine the feasibility of the process and to design a laboratory scale demonstration unit. The contracted time is complete, and the research is still continuing. This report provides the results obtained to date. As the model and calculations are completed those results will also be provided. This report contains the results of the computer code that have been completed to date. Results from a ASMEE Benchmark problem, flow over a backward step with heat transfer, Couette flow with magnetic forces, free jet flow are presented along with several other check calculations that are representative of the cases that were calculated in the course of the development process. The final cases that define a velocity field in the exit of a plasma spray torch with and without a magnetic field are in process. A separate program (SPRAY) has been developed that can track the plating material to the substrate and describe the distribution of the material on the substrate. When the jet calculations are complete SPRAY will be used to compare the distribution of material on the substrate with and without the effect of the magnetic focus.

  14. Plasma-enhanced chemical vapor deposition of multiwalled carbon nanofibers

    NASA Technical Reports Server (NTRS)

    Matthews, Kristopher; Cruden, Brett A.; Chen, Bin; Meyyappan, M.; Delzeit, Lance

    2002-01-01

    Plasma-enhanced chemical vapor deposition is used to grow vertically aligned multiwalled carbon nanofibers (MWNFs). The graphite basal planes in these nanofibers are not parallel as in nanotubes; instead they exhibit a small angle resembling a stacked cone arrangement. A parametric study with varying process parameters such as growth temperature, feedstock composition, and substrate power has been conducted, and these parameters are found to influence the growth rate, diameter, and morphology. The well-aligned MWNFs are suitable for fabricating electrode systems in sensor and device development.

  15. Atmospheric Plasma Deposition of Diamond-like Carbon Coatings

    SciTech Connect

    Ladwig, Angela

    2008-01-23

    There is great demand for thin functional coatings in the semiconductor, optics, electronics, medical, automotive and aerospace industries [1-13]. As fabricated components become smaller and more complex, the properties of the materials’ surface take on greater importance. Thin coatings play a key role in tailoring surfaces to give them the desired hardness, wear resistance, chemical inertness, and electrical characteristics. Diamond-like carbon (DLC) coatings possess an array of desirable properties, including outstanding abrasion and wear resistance, chemical inertness, hardness, a low coefficient of friction and exceptionally high dielectric strength [14-22]. Diamond-like carbon is considered to be an amorphous material, containing a mixture of sp2 and sp3 bonded carbon. Based on the percentage of sp3 carbon and the hydrogen content, four different types of DLC coatings have been identified: tetrahedral carbon (ta-C), hydrogenated amorphous carbon (a-C:H) hard, a-C:H soft, and hydrogenated tetrahedral carbon (ta-C:H) [20,24,25]. Possessing the highest hardness of 80 GPa, ta-C possesses an sp3 carbon content of 80 to 88u%, and no appreciable hydrogen content whereas a-C:H soft possesses a hardness of less than 10 GPa, contains an sp3 carbon content of 60% and a hydrogen content between 30 to 50%. Methods used to deposit DLC coatings include ion beam deposition, cathodic arc spray, pulsed laser ablation, argon ion sputtering, and plasma-enhanced chemical vapor deposition [73-83]. Researchers contend that several advantages exist when depositing DLC coatings in a low-pressure environment. For example, ion beam processes are widely utilized since the ion bombardment is thought to promote denser sp3-bonded carbon networks. Other processes, such as sputtering, are better suited for coating large parts [29,30,44]. However, the deposition of DLC in a vacuum system has several disadvantages, including high equipment cost and restrictions on the size and shape of

  16. Friction and wear of plasma-deposited diamond films

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Garscadden, Alan; Barnes, Paul N.; Jackson, Howard E.

    1993-01-01

    Reciprocating sliding friction experiments in humid air and in dry nitrogen and unidirectional sliding friction experiments in ultrahigh vacuum were conducted with a natural diamond pin in contact with microwave-plasma-deposited diamond films. Diamond films with a surface roughness (R rms) ranging from 15 to 160 nm were produced by microwave-plasma-assisted chemical vapor deposition. In humid air and in dry nitrogen, abrasion occurred when the diamond pin made grooves in the surfaces of diamond films, and thus the initial coefficients of friction increased with increasing initial surface roughness. The equilibrium coefficients of friction were independent of the initial surface roughness of the diamond films. In vacuum the friction for diamond films contacting a diamond pin arose primarily from adhesion between the sliding surfaces. In these cases, the initial and equilibrium coefficients of friction were independent of the initial surface roughness of the diamond films. The equilibrium coefficients of friction were 0.02 to 0.04 in humid air and in dry nitrogen, but 1.5 to 1.8 in vacuum. The wear factor of the diamond films depended on the initial surface roughness, regardless of environment; it increased with increasing initial surface roughness. The wear factors were considerably higher in vacuum than in humid air and in dry nitrogen.

  17. Selective Plasma Deposition of Fluorocarbon Films on SAMs

    NASA Technical Reports Server (NTRS)

    Crain, Mark M., III; Walsh, Kevin M.; Cohn, Robert W.

    2006-01-01

    A dry plasma process has been demonstrated to be useful for the selective modification of self-assembled monolayers (SAMs) of alkanethiolates. These SAMs are used, during the fabrication of semiconductor electronic devices, as etch masks on gold layers that are destined to be patterned and incorporated into the devices. The selective modification involves the formation of fluorocarbon films that render the SAMs more effective in protecting the masked areas of the gold against etching by a potassium iodide (KI) solution. This modification can be utilized, not only in the fabrication of single electronic devices but also in the fabrication of integrated circuits, microelectromechanical systems, and circuit boards. In the steps that precede the dry plasma process, a silicon mold in the desired pattern is fabricated by standard photolithographic techniques. A stamp is then made by casting polydimethylsiloxane (commonly known as silicone rubber) in the mold. The stamp is coated with an alkanethiol solution, then the stamp is pressed on the gold layer of a device to be fabricated in order to deposit the alkanethiol to form an alkanethiolate SAM in the desired pattern (see figure). Next, the workpiece is exposed to a radio-frequency plasma generated from a mixture of CF4 and H2 gases. After this plasma treatment, the SAM is found to be modified, while the exposed areas of gold remain unchanged. This dry plasma process offers the potential for forming masks superior to those formed in a prior wet etching process. Among the advantages over the wet etching process are greater selectivity, fewer pin holes in the masks, and less nonuniformity of the masks. The fluorocarbon films formed in this way may also be useful as intermediate layers for subsequent fabrication steps and as dielectric layers to be incorporated into finished products.

  18. Fluorinated carboxylic membranes deposited by plasma enhanced chemical vapour deposition for fuel cell applications

    NASA Astrophysics Data System (ADS)

    Thery, J.; Martin, S.; Faucheux, V.; Le Van Jodin, L.; Truffier-Boutry, D.; Martinent, A.; Laurent, J.-Y.

    Among the fuel cell technologies, the polymer electrolyte membrane fuel cells (PEMFCs) are particularly promising because they are energy-efficient, clean, and fuel-flexible (i.e., can use hydrogen or methanol). The great majority of PEM fuel cells rely on a polymer electrolyte from the family of perfluorosulfonic acid membranes, nevertheless alternative materials are currently being developed, mainly to offer the alternative workout techniques which are required for the portable energy sources. Plasma polymerization represents a good solution, as it offers the possibility to deposit thin layer with an accurate and homogeneous thickness, even on 3D surfaces. In this paper, we present the results for the growth of proton conductive fluoro carboxylic membranes elaborated by plasma enhanced chemical vapour deposition. These membranes present conductivity values of the same order than the one of Nafion ®. The properties of the membrane, such as the chemical composition, the ionic conductivity, the swelling behaviour and the permeability were correlated to the plasma process parameters. The membranes were integrated in fuel cells on porous substrates and we present here the results regarding the barrier effect and the power output. Barrier effect similar to those of 40 μm Nafion ® layers was reached for 10 μm thick carboxylic membranes. Power outputs around 3 mW cm -2 were measured. We discuss the results regarding the gas barrier effect and the power outputs.

  19. Pulsed and continuous wave acrylic acid radio frequency plasma deposits: plasma and surface chemistry.

    PubMed

    Voronin, Sergey A; Zelzer, Mischa; Fotea, Catalin; Alexander, Morgan R; Bradley, James W

    2007-04-05

    Plasma polymers have been formed from acrylic acid using a pulsed power source. An on-pulse duration of 100 micros was used with a range of discharge off-times between 0 (continuous wave) and 20,000 micros. X-ray photoelectron spectroscopy (XPS) has been used in combination with trifluoroethanol (TFE) derivatization to quantify the surface concentration of the carboxylic acid functionality in the deposit. Retention of this functionality from the monomer varied from 2% to 65%. When input power was expressed as the time-averaged energy per monomer molecule, E(mean), the deposit chemistry achieved could be described using a single relationship for all deposition conditions. Deposition rates were monitored using a quartz crystal microbalance, which revealed a range from 20 to 200 microg m(-2) s(-1), and these fell as COOH functional retention increased. The flow rate was found to be the major determinant of the deposition rate, rather than being uniquely defined by E(mean), connected to the rate at which fresh monomer enters the system in the monomer deficient regime. The neutral species were collected in a time-averaged manner. As the energy delivered per molecule in the system (E(mean)) decreased, the amount of intact monomer increased, with the average neutral mass approaching 72 amu as E(mean) tends to zero. No neutral oligomeric species were detected. Langmuir probes have been used to determine the temporal evolution of the density and temperature of the electrons in the plasma and the plasma potential adjacent to the depositing film. It has been found that even 500 micros into the afterglow period that ionic densities are still significant, 5-10% of the on-time density, and that ion accelerating sheath potentials fall from 40 V in the on-time to a few volts in the off-time. We have made the first detailed, time- and energy-resolved mass spectrometry measurements in depositing acrylic acid plasma. These have allowed us to identify and quantify the positive ion

  20. Robust Ultralow-k Dielectric (Fluorocarbon) Deposition by Microwave Plasma-Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kikuchi, Yoshiyuki; Miyatani, Kotaro; Kobayashi, Yasuo; Kawamura, Kohei; Nemoto, Takenao; Nakamura, Masahiro; Matsumoto, Hirokazu; Ito, Azumi; Shirotori, Akihide; Nozawa, Toshihisa; Matsuoka, Takaaki

    2012-05-01

    A robust fluorocarbon film was successfully deposited on a substrate at a temperature above 400 °C by the new microwave plasma-enhanced chemical vapor deposition (MWPE-CVD) method using the linear C5F8 precursor instead of a conventional cyclic C5F8 one. The fluorocarbon performed keeping the dielectric constant low as a value of 2.25 by controlling the molecular structure forming cross-linked poly(tetrafluoroethylene) (PTFE) chains with configurational carbon atoms. The novel fluorocarbon demonstrates less fluorine degassing at an elevated temperature, with high mechanical strength and without degradation of adhesion of the fluorocarbon film to SiCN and SiOx stacked films after thermal stress at 400 °C and 1 atm N2 for 1 h. Consequently, this robust fluorocarbon film is considered a promising candidate for general porous silicon materials with applications to practical integration processes as an interlayer dielectric.

  1. Carbon Nanotubes/Nanofibers by Plasma Enhanced Chemical Vapour Deposition

    NASA Technical Reports Server (NTRS)

    Teo, K. B. K.; Hash, D. B.; Bell, M. S.; Chhowalla, M.; Cruden, B. A.; Amaratunga, G. A. J.; Meyyappan, M.; Milne, W. I.

    2005-01-01

    Plasma enhanced chemical vapour deposition (PECVD) has been recently used for the production of vertically aligned carbon nanotubedfibers (CN) directly on substrates. These structures are potentially important technologically as electron field emitters (e.g. microguns, microwave amplifiers, displays), nanoelectrodes for sensors, filter media, superhydrophobic surfaces and thermal interface materials for microelectronics. A parametric study on the growth of CN grown by glow discharge dc-PECVD is presented. In this technique, a substrate containing thin film Ni catalyst is exposed to C2H2 and NH3 gases at 700 C. Without plasma, this process is essentially thermal CVD which produces curly spaghetti-like CN as seen in Fig. 1 (a). With the plasma generated by biasing the substrate at -6OOV, we observed that the CN align vertically during growth as shown in Fig. l(b), and that the magnitude of the applied substrate bias affects the degree of alignment. The thickness of the thin film Ni catalyst was found to determine the average diameter and inversely the length of the CN. The yield and density of the CN were controlled by the use of different diffusion barrier materials under the Ni catalyst. Patterned CN growth [Fig. l(c)], with la variation in CN diameter of 4.1% and 6.3% respectively, is achieved by lithographically defining the Ni thin film prior to growth. The shape of the structures could be varied from very straight nanotube-like to conical tip-like nanofibers by increasing the ratio of C2H2 in the gas flow. Due to the plasma decomposition of C2H2, amorphous carbon (a-C) is an undesirable byproduct which could coat the substrate during CN growth. Using a combination of depth profiled Auger electron spectroscopy to study the substrate and in-situ mass spectroscopy to examine gas phase neutrals and ions, the optimal conditions for a-C free growth of CN is determined.

  2. Physical processes and modeling of plasma deposition and hardening of coatings-switched electrical parameters

    NASA Astrophysics Data System (ADS)

    Kadyrmetov, A. M.; Sharifullin, S. N.

    2016-11-01

    This paper presents the results of simulation of plasma deposition and hardening of coatings in modulating the electrical parameters. Mathematical models are based on physical models of gas-dynamic mechanisms more dynamic and thermal processes of the plasma jet. As an example the modeling of dynamic processes of heterogeneous plasma jet, modulated current pulses indirect arc plasma torch.

  3. Host range and receptor utilization of canine distemper virus analyzed by recombinant viruses: Involvement of heparin-like molecule in CDV infection.

    PubMed

    Fujita, Kentaro; Miura, Ryuichi; Yoneda, Misako; Shimizu, Fusako; Sato, Hiroki; Muto, Yuri; Endo, Yasuyuki; Tsukiyama-Kohara, Kyoko; Kai, Chieko

    2007-03-15

    We constructed recombinant viruses expressing enhanced green fluorescent protein (EGFP) or firefly luciferase from cDNA clones of the canine distemper virus (CDV) (a Japanese field isolate, Yanaka strain). Using these viruses, we examined susceptibilities of different cell lines to CDV infection. The results revealed that the recombinant CDVs can infect a broad range of cell lines. Infectivity inhibition assay using a monoclonal antibody specific to the human SLAM molecule indicated that the infection of B95a cells with these recombinant CDVs is mainly mediated by SLAM but the infection of 293 cell lines with CDV is not, implying the presence of one or more alternative receptors for CDV in non-lymphoid tissue. Infection of 293 cells with the recombinant CDV was inhibited by soluble heparin, and the recombinant virus bound to immobilized heparin. Both F and H proteins of CDV could bind to immobilized heparin. These results suggest that heparin-like molecules are involved in CDV infection.

  4. Coaxial carbon plasma gun deposition of amorphous carbon films

    NASA Technical Reports Server (NTRS)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  5. High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Vohra, Yogesh K. (Inventor); McCauley, Thomas S. (Inventor)

    1997-01-01

    The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 .mu.m/hr for high quality films, as compared to rates of less than 5 .mu.m/hr generally reported for MPCVD processes.

  6. Plasma enhanced metalorganic chemical vapor deposition of amorphous aluminum nitride

    NASA Astrophysics Data System (ADS)

    Harris, H.; Biswas, N.; Temkin, H.; Gangopadhyay, S.; Strathman, M.

    2001-12-01

    Plasma enhanced deposition of amorphous aluminum nitride (AlN) using trimethylaluminum, hydrogen, and nitrogen was performed in a capacitively coupled plasma system. Temperature was varied from 350 to 550 °C, and pressure dependence of the film structure was investigated. Films were characterized by Fourier transform infrared, Rutherford backscattering (RBS), ellipsometry, and x-ray diffraction (XRD). The films are amorphous in nature, as indicated by XRD. Variations in the refractive index were observed in ellipsometric measurements, which is explained by the incorporation of carbon in the films, and confirmed by RBS. Capacitance-voltage, conductance-voltage (G-V), and current-voltage measurements were performed to reveal bulk and interface electrical properties. The electrical properties showed marked dependence on processing conditions of the AlN films. Clear peaks as observed in the G-V characteristics indicated that the losses are predominantly due to interface states. The interface state density ranged between 1010 and 1011eV-1 cm-2. Annealing in hydrogen resulted in lowering of interface state density values.

  7. High Temperature Multilayer Environmental Barrier Coatings Deposited Via Plasma Spray-Physical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Harder, Bryan James; Zhu, Dongming; Schmitt, Michael P.; Wolfe, Douglas E.

    2014-01-01

    Si-based ceramic matrix composites (CMCs) require environmental barrier coatings (EBCs) in combustion environments to avoid rapid material loss. Candidate EBC materials have use temperatures only marginally above current technology, but the addition of a columnar oxide topcoat can substantially increase the durability. Plasma Spray-Physical Vapor Deposition (PS-PVD) allows application of these multilayer EBCs in a single process. The PS-PVD technique is a unique method that combines conventional thermal spray and vapor phase methods, allowing for tailoring of thin, dense layers or columnar microstructures by varying deposition conditions. Multilayer coatings were deposited on CMC specimens and assessed for durability under high heat flux and load. Coated samples with surface temperatures ranging from 2400-2700F and 10 ksi loads using the high heat flux laser rigs at NASA Glenn. Coating morphology was characterized in the as-sprayed condition and after thermomechanical loading using electron microscopy and the phase structure was tracked using X-ray diffraction.

  8. Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

    2017-03-01

    Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

  9. Characteristics of silicon nitride deposited by VHF (162 MHz)-plasma enhanced chemical vapor deposition using a multi-tile push-pull plasma source

    NASA Astrophysics Data System (ADS)

    Kim, Ki Seok; Sirse, Nishant; Kim, Ki Hyun; Rogers Ellingboe, Albert; Kim, Kyong Nam; Yeom, Geun Young

    2016-10-01

    To prevent moisture and oxygen permeation into flexible organic electronic devices formed on substrates, the deposition of an inorganic diffusion barrier material such as SiN x is important for thin film encapsulation. In this study, by a very high frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source, SiN x layers were deposited with a gas mixture of NH3/SiH4 with/without N2 and the characteristics of the plasma and the deposited SiN x film as the thin film barrier were investigated. Compared to a lower frequency (60 MHz) plasma, the VHF (162 MHz) multi-tile push-pull plasma showed a lower electron temperature, a higher vibrational temperature, and higher N2 dissociation for an N2 plasma. When a SiN x layer was deposited with a mixture of NH3/SiH4 with N2 at a low temperature of 100 °C, a stoichiometric amorphous Si3N4 layer with very low Si-H bonding could be deposited. The 300 nm thick SiN x film exhibited a low water vapor transmission rate of 1.18  ×  10-4 g (m2 · d)-1, in addition to an optical transmittance of higher than 90%.

  10. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

    SciTech Connect

    Bartlome, Richard De Wolf, Stefaan; Demaurex, Bénédicte; Ballif, Christophe; Amanatides, Eleftherios; Mataras, Dimitrios

    2015-05-28

    We clarify the difference between the SiH{sub 4} consumption efficiency η and the SiH{sub 4} depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH{sub 4} consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH{sub 4} concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH{sub 4} concentration in the plasma c{sub p}, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH{sub 4} density measurements throughout the ignition and the termination of a plasma.

  11. Analysis of hydrogen plasma in a microwave plasma chemical vapor deposition reactor

    NASA Astrophysics Data System (ADS)

    Shivkumar, G.; Tholeti, S. S.; Alrefae, M. A.; Fisher, T. S.; Alexeenko, A. A.

    2016-03-01

    The aim of this work is to build a numerical model of hydrogen plasma inside a microwave plasma chemical vapor deposition system. This model will help in understanding and optimizing the conditions for the growth of carbon nanostructures. A 2D axisymmetric model of the system is implemented using the finite element high frequency Maxwell solver and the heat transfer solver in COMSOL Multiphysics. The system is modeled to study variation in parameters with reactor geometry, microwave power, and gas pressure. The results are compared with experimental measurements from the Q-branch of the H2 Fulcher band of hydrogen using an optical emission spectroscopy technique. The parameter γ in Füner's model is calibrated to match experimental observations at a power of 500 W and 30 Torr. Good agreement is found between the modeling and experimental results for a wide range of powers and pressures. The gas temperature exhibits a weak dependence on power and a strong dependence on gas pressure. The inclusion of a vertical dielectric pillar that concentrates the plasma increases the maximum electron temperature by 70%, the maximum gas temperature by 50%, and the maximum electron number density by 70% when compared to conditions without the pillar at 500 W and 30 Torr. Experimental observations also indicate intensified plasma with the inclusion of a pillar.

  12. Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al{sub 2}O{sub 3} films deposited by remote plasma atomic layer deposition

    SciTech Connect

    Jung, Hyunsoo; Choi, Hagyoung; Lee, Sanghun; Jeon, Heeyoung; Jeon, Hyeongtag

    2013-11-07

    In the present study, we investigated the gas and moisture permeation barrier properties of Al{sub 2}O{sub 3} films deposited on polyethersulfone films (PES) by capacitively coupled plasma (CCP) type Remote Plasma Atomic Layer Deposition (RPALD) at Radio Frequency (RF) plasma powers ranging from 100 W to 400 W in 100 W increments using Trimethylaluminum [TMA, Al(CH{sub 3}){sub 3}] as the Al source and O{sub 2} plasma as the reactant. To study the gas and moisture permeation barrier properties of 100-nm-thick Al{sub 2}O{sub 3} at various plasma powers, the Water Vapor Transmission Rate (WVTR) was measured using an electrical Ca degradation test. WVTR decreased as plasma power increased with WVTR values for 400 W and 100 W of 2.6 × 10{sup −4} gm{sup −2}day{sup −1} and 1.2 × 10{sup −3} gm{sup −2}day{sup −1}, respectively. The trends for life time, Al-O and O-H bond, density, and stoichiometry were similar to that of WVTR with improvement associated with increasing plasma power. Further, among plasma power ranging from 100 W to 400 W, the highest power of 400 W resulted in the best moisture permeation barrier properties. This result was attributed to differences in volume and amount of ion and radical fluxes, to join the ALD process, generated by O{sub 2} plasma as the plasma power changed during ALD process, which was determined using a plasma diagnosis technique called the Floating Harmonic Method (FHM). Plasma diagnosis by FHM revealed an increase in ion flux with increasing plasma power. With respect to the ALD process, our results indicated that higher plasma power generated increased ion and radical flux compared with lower plasma power. Thus, a higher plasma power provides the best gas and moisture permeation barrier properties.

  13. Characterization of Carbon Deposits Formed During Plasma Pyrolysis of Xinjiang Candle Coal

    NASA Astrophysics Data System (ADS)

    Zhu, Guilin; Meng, Yuedong; Shu, Xingsheng; Fang, Shidong

    2009-08-01

    Carbon deposits were formed on the reactor wall during plasma pyrolysis of the Xinjiang candle coal in our V-style plasma pyrolysis pilot-plant. The carbon deposits were studied using a scanning electronic microscope (SEM) and the X-ray diffraction (XRD) method. It was found that carbon deposits located at different parts in the reactor exhibited different microscopic patterns. The formation mechanism of the carbon deposits was deduced. The downward increase in the graphitization degree of the carbon deposits was found and interpreted.

  14. Electrochromic Devices Deposited on Low-Temperature Plastics by Plasma-Enhanced Chemical Vapor Deposition

    SciTech Connect

    Robbins, Joshua; Seman, Michael

    2005-09-20

    Electrochromic windows have been identified by the Basic energy Sciences Advisory committee as an important technology for the reduction of energy spent on heating and cooling in residential and commercial buildings. Electrochromic devices have the ability to reversibly alter their optical properties in response to a small electric field. By blocking ultraviolet and infrared radiation, while modulating the incoming visible radiation, electrochromics could reduce energy consumption by several Quads per year. This amounts to several percent of the total annual national energy expenditures. The purpose of this project was to demonstrate proof of concept for using plasma-enhanced chemical vapor deposition (PECVD) for depositing all five layers necessary for full electrochromic devices, as an alternative to sputtering techniques. The overall goal is to produce electrochromic devices on flexible polymer substrates using PECVD to significantly reduce the cost of the final product. We have successfully deposited all of the films necessary for a complete electrochromic devices using PECVD. The electrochromic layer, WO3, displayed excellent change in visible transmission with good switching times. The storage layer, V2O5, exhibited a high storage capacity and good clear state transmission. The electrolyte, Ta2O5, was shown to functional with good electrical resistivity to go along with the ability to transfer Li ions. There were issues with leakage over larger areas, which can be address with further process development. We developed a process to deposit ZnO:Ga with a sheet resistance of < 50 W/sq. with > 90% transmission. Although we were not able to deposit on polymers due to the temperatures required in combination with the inverted position of our substrates. Two types of full devices were produced. Devices with Ta2O5 were shown to be functional using small aluminum dots as the top contact. The polymer electrolyte devices were shown to have a clear state transmission of

  15. Optical emission study of a doped diamond deposition process by plasma enhanced chemical vapor deposition

    SciTech Connect

    Rayar, M.; Supiot, P.; Veis, P.; Gicquel, A.

    2008-08-01

    Standard H{sub 2}/CH{sub 4}/B{sub 2}H{sub 6} plasmas (99% of H{sub 2} and 1% of CH{sub 4}, with 0-100 ppm of B{sub 2}H{sub 6} added) used for doped diamond film growth are studied by optical emission spectroscopy in order to gain a better understanding of the influence of boron species on the gas phase chemistry. Only two boron species are detected under our experimental conditions (9/15/23 W cm{sup -3} average microwave power density values), and the emission spectra used for studies reported here are B({sup 2}S{sub 1/2}-{sup 2}P{sub 1/2,3/2}{sup 0}) and BH[A {sup 1}{pi}-X {sup 1}{sigma}{sup +}(0,0)]. Variations of their respective emission intensities as a function of the ratio B/C, the boron to carbon ratio in the gas mixture, are reported. We confirmed that the plasma parameters (T{sub g}, T{sub e}, and n{sub e}) are not affected by the introduction of diborane, and the number densities of B atoms and BH radical species were estimated from experimental measurements. The results are compared to those obtained from a zero-dimensional chemical kinetic model where two groups of reactions are considered: (1) BH{sub x}+H{r_reversible}BH{sub x-1}+H{sub 2} (x=1-3) by analogy with the well-known equilibrium CH{sub x}+H set of reactions, which occurs, in particular, in diamond deposition reactors; and (2) from conventional organic chemistry, the set of reactions involving boron species: BH{sub x}+C{sub 2}H{sub 2} (x=0-1). The results clearly show that the model based on hydrogen and boron hydrides reactions alone is not consistent with the experimental results, while it is so when taking into account both sets of reactions. Once an upper limit for the boron species number densities has been estimated, axial profiles are calculated on the basis of the plasma model results obtained previously in Laboratoire d'Ingenierie des Materiaux et des Hautes Pressions, and significant differences in trends for different boron species are found. At the plasma-to-substrate boundary

  16. Optical emission study of a doped diamond deposition process by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Rayar, M.; Supiot, P.; Veis, P.; Gicquel, A.

    2008-08-01

    Standard H2/CH4/B2H6 plasmas (99% of H2 and 1% of CH4, with 0-100ppm of B2H6 added) used for doped diamond film growth are studied by optical emission spectroscopy in order to gain a better understanding of the influence of boron species on the gas phase chemistry. Only two boron species are detected under our experimental conditions (9/15/23Wcm-3 average microwave power density values), and the emission spectra used for studies reported here are B(S1/22-P1/2,3/202) and BH [AΠ1-XΣ+1(0,0)]. Variations of their respective emission intensities as a function of the ratio B /C, the boron to carbon ratio in the gas mixture, are reported. We confirmed that the plasma parameters (Tg, Te, and ne) are not affected by the introduction of diborane, and the number densities of B atoms and BH radical species were estimated from experimental measurements. The results are compared to those obtained from a zero-dimensional chemical kinetic model where two groups of reactions are considered: (1) BHx+H ↔BHx -1+H2 (x=1-3) by analogy with the well-known equilibrium CHx+H set of reactions, which occurs, in particular, in diamond deposition reactors; and (2) from conventional organic chemistry, the set of reactions involving boron species: BHx+C2H2 (x =0-1). The results clearly show that the model based on hydrogen and boron hydrides reactions alone is not consistent with the experimental results, while it is so when taking into account both sets of reactions. Once an upper limit for the boron species number densities has been estimated, axial profiles are calculated on the basis of the plasma model results obtained previously in Laboratoire d'Ingénierie des Matériaux et des Hautes Pressions, and significant differences in trends for different boron species are found. At the plasma-to-substrate boundary, [BH] and [B] drop off in contrast to [BH2], which shows little decrease, and [BH3], which shows little increase, in this region.

  17. Microstructure and characterization of a novel cobalt coating prepared by cathode plasma electrolytic deposition

    NASA Astrophysics Data System (ADS)

    Quan, Cheng; He, Yedong

    2015-10-01

    A novel cobalt coating was prepared by cathode plasma electrolytic deposition (CPED). The kinetics of the electrode process in cathode plasma electrolytic deposition was studied. The composition and microstructure of the deposited coatings were investigated by SEM, EDS, XRD and TEM. The novel cobalt coatings were dense and uniform, showing a typically molten morphology, and were deposited with a rather fast rate. Different from the coatings prepared by conventional electrodeposition or chemical plating, pure cobalt coatings with face center cubic (fcc) structure were obtained by CPED. The deposited coatings were nanocrystalline structure with an average grain size of 40-50 nm, exhibited high hardness, excellent adhesion with the stainless steels, and superior wear resistance. The properties of the novel cobalt coatings prepared by CPED have been improved significantly, as compared with that prepared by conventional methods. It reveals that cathode plasma electrolytic deposition is an effective way to prepare novel cobalt coatings with high quality.

  18. Experimental investigation on geometrical aspects of micro-plasma deposited tool steel for repair applications

    NASA Astrophysics Data System (ADS)

    Jhavar, S.; Paul, C. P.; Jain, N. K.

    2014-08-01

    Recent advancement in direct material deposition processes found wide applications in rapid prototyping, manufacturing and tooling industry. Micro-plasma deposition is one of the recent developments in this domain. This paper reports the deployment of newly integrated micro-plasma deposition system for the deposition of AISI P-20 tool steel on the AISI P20 tool steel substrate. A number of test tracks for single track deposition were deposited at the various combination of processing parameters. The sets of parameters yielding good deposits were selected to deposit overlap tracks. The geometry of single and overlapped tracks was evaluated to understand the parametric dependence. The study indicates that the aspect ratio of track geometry (ratio of width to height of track) is dependent on the processing parameters and the discharge current is identified as the most dominating parameters (contribution = 44%), followed by scan speed (contribution = 26.68%) and wire feed rate (contribution = 26.98%) with almost same effect. The microscopic study of the deposits indicates that the material deposited at the optimum processing parameters is free from surface and bulk defects. The estimated material properties are found to be at par with conventional processed material. This feasibility study proved that the micro-plasma deposition can be used for the generation of surfaces and multi-featured material deposition. It paved a way for the application of the process in die/mold repairs.

  19. Deposition of dielectric films on silicon using a fore-vacuum plasma electron source.

    PubMed

    Zolotukhin, D B; Oks, E M; Tyunkov, A V; Yushkov, Yu G

    2016-06-01

    We describe an experiment on the use of a fore-vacuum-pressure, plasma-cathode, electron beam source with current up to 100 mA and beam energy up to 15 keV for deposition of Mg and Al oxide films on Si substrates in an oxygen atmosphere at a pressure of 10 Pa. The metals (Al and Mg) were evaporated and ionized using the electron beam with the formation of a gas-metal beam-plasma. The plasma was deposited on the surface of Si substrates. The elemental composition of the deposited films was analyzed.

  20. High-rate diamond deposition by microwave plasma CVD

    NASA Astrophysics Data System (ADS)

    Li, Xianglin

    In this dissertation, the growth of CVD (Chemical Vapor Deposition) diamond thin films is studied both theoretically and experimentally. The goal of this research is to deposit high quality HOD (Highly Oriented Diamond) films with a growth rate greater than 1 mum/hr. For the (100)-oriented HOD films, the growth rate achieved by the traditional process is only 0.3 mum/hr while the theoretical limit is ˜0.45 mum/hr. This research increases the growth rate up to 5.3 mum/hr (with a theoretical limit of ˜7 mum/hr) while preserving the crystal quality. This work builds a connection between the theoretical study of the CVD process and the experimental research. The study is extended from the growth of regular polycrystalline diamond to highly oriented diamond (HOD) films. For the increase of the growth rate of regular polycrystalline diamond thin films, a scaling growth model developed by Goodwin is introduced in details to assist in the understanding of the MPCVD (Microwave Plasma CVD) process. Within the Goodwin's scaling model, there are only four important sub-processes for the growth of diamond: surface modification, adsorption, desorption, and incorporation. The factors determining the diamond growth rate and film quality are discussed following the description of the experimental setup and process parameters. Growth rate and crystal quality models are reviewed to predict and understand the experimental results. It is shown that the growth rate of diamond can be increased with methane input concentration and the amount of atomic hydrogen (by changing the total pressure). It is crucial to provide enough atomic hydrogen to conserve crystal quality of the deposited diamond film. The experimental results demonstrate that for a fixed methane concentration, there is a minimum pressure for growth of good diamond. Similarly, for a fixed total pressure, there is a maximum methane concentration for growth of good diamond, and this maximum methane concentration increases

  1. Role of plasma enhanced atomic layer deposition reactor wall conditions on radical and ion substrate fluxes

    SciTech Connect

    Sowa, Mark J.

    2014-01-15

    Chamber wall conditions, such as wall temperature and film deposits, have long been known to influence plasma source performance on thin film processing equipment. Plasma physical characteristics depend on conductive/insulating properties of chamber walls. Radical fluxes depend on plasma characteristics as well as wall recombination rates, which can be wall material and temperature dependent. Variations in substrate delivery of plasma generated species (radicals, ions, etc.) impact the resulting etch or deposition process resulting in process drift. Plasma enhanced atomic layer deposition is known to depend strongly on substrate radical flux, but film properties can be influenced by other plasma generated phenomena, such as ion bombardment. In this paper, the chamber wall conditions on a plasma enhanced atomic layer deposition process are investigated. The downstream oxygen radical and ion fluxes from an inductively coupled plasma source are indirectly monitored in temperature controlled (25–190 °C) stainless steel and quartz reactors over a range of oxygen flow rates. Etch rates of a photoresist coated quartz crystal microbalance are used to study the oxygen radical flux dependence on reactor characteristics. Plasma density estimates from Langmuir probe ion saturation current measurements are used to study the ion flux dependence on reactor characteristics. Reactor temperature was not found to impact radical and ion fluxes substantially. Radical and ion fluxes were higher for quartz walls compared to stainless steel walls over all oxygen flow rates considered. The radical flux to ion flux ratio is likely to be a critical parameter for the deposition of consistent film properties. Reactor wall material, gas flow rate/pressure, and distance from the plasma source all impact the radical to ion flux ratio. These results indicate maintaining chamber wall conditions will be important for delivering consistent results from plasma enhanced atomic layer deposition

  2. Effect of substrate temperature on deposition rate of rf plasma-deposited hydrogenated amorphous silicon thin films

    NASA Astrophysics Data System (ADS)

    Andújar, J. L.; Bertran, E.; Canillas, A.; Campmany, J.; Morenza, J. L.

    1991-03-01

    We present a study about the influence of substrate temperature on deposition rate of hydrogenated amorphous silicon thin films prepared by rf glow discharge decomposition of pure silane gas in a capacitively coupled plasma reactor. Two different behaviors are observed depending on deposition pressure conditions. At high pressure (30 Pa) the influence of substrate temperature on deposition rate is mainly through a modification of gas density, in such a way that the substrate temperature of deposition rate is similar to pressure dependence at constant temperature. On the contrary, at low pressure (3 Pa), a gas density effect cannot account for the observed increase of deposition rate as substrate temperature rises above 450 K with an activation energy of 1.1 kcal/mole. In accordance with laser-induced fluorescence measurements reported in the literature, this rise has been ascribed to an increase of secondary electron emission from the growing film surface as a result of molecular hydrogen desorption.

  3. Contamination due to memory effects in filtered vacuum arc plasma deposition systems

    SciTech Connect

    Martins, D.R.; Salvadori, M.C.; Verdonck, P.; Brown, I.G.

    2002-08-13

    Thin film synthesis by filtered vacuum arc plasma deposition is a widely used technique with a number of important emerging technological applications. A characteristic feature of the method is that during the deposition process not only is the substrate coated by the plasma, but the plasma gun itself and the magnetic field coil and/or vacuum vessel section constituting the macroparticle filter are also coated to some extent. If then the plasma gun cathode is changed to a new element, there can be a contamination of the subsequent film deposition by sputtering from various parts of the system of the previous coating species. We have experimentally explored this effect and compared our results with theoretical estimates of sputtering from the SRIM (Stopping and Range of Ions in Matter) code. We find film contamination of order 10-4 - 10-3, and the memory of the prior history of the deposition hardware can be relatively long-lasting.

  4. Low-pressure microwave plasma nucleation and deposition of diamond films

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Pool, F. S.; Rich, D. H.

    1992-01-01

    Low-pressure microwave plasma nucleation and deposition of diamond films were investigated in the pressure range 10-mtorr to 10 torr, at substrate temperatures 400-750 C and with CH4 and O2 concentrations in H2 plasma of 2-15 percent and 2-10 percent, respectively. The experiments were performed in a microwave plasma system consisting of a microwave plasma chamber, a downstream deposition chamber, and an RF induction heated sample stage. Scanning electron microscopy of diamond films deposited at 600 C with 5 percent CH4 and 5 percent O2 in H2 plasmas showed high-quality well faceted crystallites of 1/2 micron size. Cathodoluminescence measurements of these films showed very few nitrogen impurities and no detectable silicon impurities.

  5. The Role of Plasma in Plasma Enhanced Chemical Vapour Deposition of Nanostructure Growth

    NASA Technical Reports Server (NTRS)

    Hash, David B.; Meyyappan, M.; Teo, Kenneth B. K.; Lacerda, Rodrigo G.; Rupesinghe, Nalin L.

    2004-01-01

    Chemical vapour deposition (CVD) has become the preferred process for high yield growth of carbon nanotubes and nanofibres because of its ability to pattern growth through lithographic positioning of transition metal catalysts on substrates. Many potential applications of nanotubes such as field emitters [1] require not only patterned growth but also vertical alignment. Some degree of ali,ment in thermal CVD processes can be obtained when carbon nanotubes are grown closely together as a result of van der Waals interactions. The ali,onment however is marginal, and the van der Waals prerequisite makes growth of freestanding nanofibres with thermal CVD unrealizable. The application of electric fields as a means of ali,onment has been shown to overcome this limitation [2-5], and highly aligned nanostructures can be grown if electric fields on the order of 0.5 V/microns are employed. Plasma enhanced CVD in various configurations including dc, rf, microwave, inductive and electron cyclotron resonance has been pursued as a means of enabling alignment in the CVD process. However, the sheath fields for the non-dc sources are in general not sufficient for a high degree of ali,pment and an additional dc bias is usually applied to the growth substrate. This begs the question as to the actual role of the plasma. It is clear that the plasma itself is not required for aligned growth as references [3] and [4] employed fields through small applied voltages (3-20 V) across very small electrode spacings (10-100 microns) and thus avoided striking a discharge.

  6. Method For Plasma Source Ion Implantation And Deposition For Cylindrical Surfaces

    DOEpatents

    Fetherston, Robert P. , Shamim, Muhammad M. , Conrad, John R.

    1997-12-02

    Uniform ion implantation and deposition onto cylindrical surfaces is achieved by placing a cylindrical electrode in coaxial and conformal relation to the target surface. For implantation and deposition of an inner bore surface the electrode is placed inside the target. For implantation and deposition on an outer cylindrical surface the electrode is placed around the outside of the target. A plasma is generated between the electrode and the target cylindrical surface. Applying a pulse of high voltage to the target causes ions from the plasma to be driven onto the cylindrical target surface. The plasma contained in the space between the target and the electrode is uniform, resulting in a uniform implantation or deposition of the target surface. Since the plasma is largely contained in the space between the target and the electrode, contamination of the vacuum chamber enclosing the target and electrodes by inadvertent ion deposition is reduced. The coaxial alignment of the target and the electrode may be employed for the ion assisted deposition of sputtered metals onto the target, resulting in a uniform coating of the cylindrical target surface by the sputtered material. The independently generated and contained plasmas associated with each cylindrical target/electrode pair allows for effective batch processing of multiple cylindrical targets within a single vacuum chamber, resulting in both uniform implantation or deposition, and reduced contamination of one target by adjacent target/electrode pairs.

  7. Study on effect of plasma surface treatments for diamond deposition by DC arc plasmatron.

    PubMed

    Kang, In-Je; Joa, Sang-Beom; Lee, Heon-Ju

    2013-11-01

    To improve the thermal conductivity and wear resistance of ceramic materials in the field of renewable energy technologies, diamond coating by plasma processing has been carried out in recent years. This study's goal is to improve diamond deposition on Al2O3 ceramic substrates by plasma surface treatments. Before diamond deposition was carried out in a vacuum, plasma surface treatments using Ar gas were conducted to improve conditions for deposition. We also conducted plasma processing for diamond deposition on Al2O3 ceramic substrates using a DC arc Plasmatron. The Al2O3 ceramic substrates with diamond film (5 x 15 mm2), were investigated by SEM (Scanning Electron Microscopy), AFM (Atomic Force Microscopy) and XRD (X-ray Diffractometer). Then, the C-H stretching of synthetic diamond films by FTIR (Fourier Transform Infrared Spectroscopy) was studied. We identified nanocrystalline diamond films on the Al2O3 ceramic substrates. The results showed us that the deposition rate of diamond films was 2.3 microm/h after plasma surface treatments. Comparing the above result with untreated ceramic substrates, the deposition rate improved with the surface roughness of the deposited diamond films.

  8. High power impulse magnetron sputtering and related discharges: scalable plasma sources for plasma-based ion implantation and deposition

    SciTech Connect

    Anders, Andre

    2009-09-01

    High power impulse magnetron sputtering (HIPIMS) and related self-sputtering techniques are reviewed from a viewpoint of plasma-based ion implantation and deposition (PBII&D). HIPIMS combines the classical, scalable sputtering technology with pulsed power, which is an elegant way of ionizing the sputtered atoms. Related approaches, such as sustained self-sputtering, are also considered. The resulting intense flux of ions to the substrate consists of a mixture of metal and gas ions when using a process gas, or of metal ions only when using `gasless? or pure self-sputtering. In many respects, processing with HIPIMS plasmas is similar to processing with filtered cathodic arc plasmas, though the former is easier to scale to large areas. Both ion implantation and etching (high bias voltage, without deposition) and thin film deposition (low bias, or bias of low duty cycle) have been demonstrated.

  9. The non-anticoagulant heparin-like K5 polysaccharide derivative K5-N,OSepi attenuates myocardial ischaemia/reperfusion injury

    PubMed Central

    Collino, Massimo; Pini, Alessandro; Mastroianni, Rosanna; Benetti, Elisa; Lanzi, Cecilia; Bani, Daniele; Chini, Jacopo; Manoni, Marco; Fantozzi, Roberto; Masini, Emanuela

    2012-01-01

    Heparin and low molecular weight heparins have been demonstrated to reduce myocardial ischaemia/reperfusion (I/R) injury, although their use is hampered by the risk of haemorrhagic and thrombotic complications. Chemical and enzymatic modifications of K5 polysaccharide have shown the possibility of producing heparin-like compounds with low anticoagulant activity and strong anti-inflammatory effects. Using a rat model of regional myocardial I/R, we investigated the effects of an epimerized N-,O-sulphated K5 polysaccharide derivative, K5-N,OSepi, on infarct size and histological signs of myocardial injury caused by 30 min. ligature of the left anterior descending coronary artery followed by 1 or 24 h reperfusion. K5-N,OSepi (0.1–1 mg/kg given i.v. 15 min. before reperfusion) significantly reduced the extent of myocardial damage in a dose-dependent manner. Furthermore, we investigated the potential mechanism(s) of the cardioprotective effect(s) afforded by K5-N,OSepi. In left ventricular samples, I/R induced mast cell degranulation and a robust increase in lipid peroxidation, free radical-induced DNA damage and calcium overload. Markers of neutrophil infiltration and activation were also induced by I/R in rat hearts, specifically myeloperoxidase activity, intercellular-adhesion-molecule-1 expression, prostaglandin-E2 and tumour-necrosis-factor-α production. The robust increase in oxidative stress and inflammatory markers was blunted by K5-N,OSepi, in a dose-dependent manner, with maximum at 1 mg/kg. Furthermore, K5-N,OSepi administration attenuated the increase in caspase 3 activity, Bid and Bax activation and ameliorated the decrease in expression of Bcl-2 within the ischaemic myocardium. In conclusion, we demonstrate that the cardioprotective effect of the non-anticoagulant K5 derivative K5-N,OSepi is secondary to a combination of anti-apoptotic and anti-inflammatory effects. PMID:22248092

  10. Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene.

    PubMed

    Roy, Amit K; Dendooven, Jolien; Deduytsche, Davy; Devloo-Casier, Kilian; Ragaert, Kim; Cardon, Ludwig; Detavernier, Christophe

    2015-02-28

    This communication reports an approach based on plasma-enhanced atomic layer deposition of aluminium oxide for the functionalization of polytetrafluoroethylene (PTFE or "Teflon") surfaces. Alternating exposure of PTFE to oxygen plasma and trimethylaluminium causes a permanent hydrophilic effect, and a more than 10-fold improvement of the "glueability" of PTFE to aluminium.

  11. Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

    SciTech Connect

    Jeon, Ki-Moon; Shin, Jae-Su; Yun, Ju-Young; Jun Lee, Sang; Kang, Sang-Woo

    2014-05-15

    The plasma-enhanced atomic layer deposition (PEALD) process was developed as a growth technique of SiO{sub 2} thin films using a plasma-activated triisopropylsilane [TIPS, ((iPr){sub 3}SiH)] precursor. TIPS was activated by an argon plasma at the precursor injection stage of the process. Using the activated TIPS, it was possible to control the growth rate per cycle of the deposited films by adjusting the plasma ignition time. The PEALD technique allowed deposition of SiO{sub 2} films at temperatures as low as 50 °C without carbon impurities. In addition, films obtained with plasma ignition times of 3 s and 10 s had similar values of root-mean-square surface roughness. In order to evaluate the suitability of TIPS as a precursor for low-temperature deposition of SiO{sub 2} films, the vapor pressure of TIPS was measured. The thermal stability and the reactivity of the gas-phase TIPS with respect to water vapor were also investigated by analyzing the intensity changes of the C–H and Si–H peaks in the Fourier-transform infrared spectrum of TIPS.

  12. Plasma properties of a new-type surface wave-sustained plasma source under the conditions of depositing DLC films

    NASA Astrophysics Data System (ADS)

    Xu, Junqi; Kousaka, Hiroyuki; Umehara, Noritsugu; Diao, Dongfeng

    2006-01-01

    Surface wave-sustained plasma (SWP) is one of the low-pressure, high- density plasma. Applying this technique, diamond-like carbon (DLC) films with excellent characteristics can be prepared by physical vapor deposition (PVD) method. However, the films' application is restricted in some degree, because it is difficult to control the film properties. In this paper, SWP was excited along a conductive rod at a frequency of 2.45 GHz without magnetic fields around the chamber wall. The fundamental theories of plasma diagnostic were presented and plasma properties were studied with a Langmuir probe under the conditions of depositing DLC films by PVD method with a graphite target. Plasma density, electron temperature, plasma potential and target current were measured at difference technique parameters such as gas pressure, microwave power, and so on. As a result, it was proved that plasma properties are greatly affected by microwave power, target voltage and argon gas pressure in chamber. The gas mass flow rate had almost no effect on plasma characters. At the same time, the results indicated that electron density is up to 10 11-10 12cm -3 even at the low pressure of 1 Pa.

  13. Effects of the growth conditions on the roughness of amorphous hydrogenated carbon films deposited by plasma enhanced chemical vapor deposition

    SciTech Connect

    Capote, G.; Prioli, R.; Freire, F. L. Jr.

    2006-11-15

    The surface roughness and scaling behavior of a-C:H films deposited by plasma enhanced chemical vapor deposition from CH{sub 4}-Ar mixtures were studied using atomic force microscopy. Raman spectroscopy gives some insights about the film microstructure. The film surface roughness is shown to decrease with the increase of deposition negative self-bias, while the presence of Ar ions enhances this effect. An analysis of the film surface and scaling behavior suggests that there is a transition of the mechanism of the film growth from a random deposition with surface diffusion process to a thermal spike based process that occurs upon the increase of the negative self-bias voltage and the argon bombardment.

  14. Plasma-deposited amorphous hydrogenated carbon films and their tribological properties

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Pouch, John J.; Alterovitz, Samuel A.

    1989-01-01

    Recent work on the properties of diamondlike carbon films and their dependence on preparation conditions are reviewed. The results of the study indicate that plasma deposition enables one to deposit a variety of amorphous hydrogenated carbon (a-C:H ) films exhibiting more diamondlike behavior to more graphitic behavior. The plasma-deposited a-C:H can be effectively used as hard, wear-resistant, and protective lubricating films on ceramic materials such as Si(sub 3)N(sub 4) under a variety of environmental conditions such as moist air, dry nitrogrn, and vacuum.

  15. Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

    SciTech Connect

    Suh, Sungin; Kim, Jun-Rae; Kim, Seongkyung; Hwang, Cheol Seong; Kim, Hyeong Joon; Ryu, Seung Wook; Cho, Seongjae

    2016-01-15

    It has not been an easy task to deposit SiN at low temperature by conventional plasma-enhanced atomic layer deposition (PE-ALD) since Si organic precursors generally have high activation energy for adsorption of the Si atoms on the Si-N networks. In this work, in order to achieve successful deposition of SiN film at low temperature, the plasma processing steps in the PE-ALD have been modified for easier activation of Si precursors. In this modification, the efficiency of chemisorption of Si precursor has been improved by additional plasma steps after purging of the Si precursor. As the result, the SiN films prepared by the modified PE-ALD processes demonstrated higher purity of Si and N atoms with unwanted impurities such as C and O having below 10 at. % and Si-rich films could be formed consequently. Also, a very high step coverage ratio of 97% was obtained. Furthermore, the process-optimized SiN film showed a permissible charge-trapping capability with a wide memory window of 3.1 V when a capacitor structure was fabricated and measured with an insertion of the SiN film as the charge-trap layer. The modified PE-ALD process using the activated Si precursor would be one of the most practical and promising solutions for SiN deposition with lower thermal budget and higher cost-effectiveness.

  16. Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique

    SciTech Connect

    Baumann, H.; Sah, R.E.

    2005-05-01

    We have used backscattering spectrometry and {sup 15}N({sup 1}H,{alpha},{gamma}){sup 12}C nuclear reaction analysis techniques to study in detail the variation in the composition of silicon oxynitride films with deposition parameters. The films were deposited using 2.45 GHz electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) technique from mixtures of precursors argon, nitrous oxide, and silane at deposition temperature 90 deg. C. The deposition pressure and nitrous oxide-to-silane gas flow rates ratio have been found to have a pronounced influence on the composition of the films. When the deposition pressure was varied for a given nitrous oxide-to-silane gas flow ratio, the amount of silicon and nitrogen increased with the deposition pressure, while the amount of oxygen decreased. For a given deposition pressure, the amount of incorporated nitrogen and hydrogen decreased while that of oxygen increased with increasing nitrous oxide-to-silane gas flow rates ratio. For nitrous oxide-to-silane gas flow ratio of 5, we obtained films which contained neither chemically bonded nor nonbonded nitrogen atoms as revealed by the results of infrared spectroscopy, backscattering spectrometry, and nuclear reaction analysis. Our results demonstrate the nitrogen-free nearly stoichiometric silicon dioxide films can be prepared from a mixture of precursors argon, nitrous oxide, and silane at low substrate temperature using high-density PECVD technique. This avoids the use of a hazardous and an often forbidden pair of silane and oxygen gases in a plasma reactor.

  17. Control of interface nanoscale structure created by plasma-enhanced chemical vapor deposition.

    PubMed

    Peri, Someswara R; Akgun, Bulent; Satija, Sushil K; Jiang, Hao; Enlow, Jesse; Bunning, Timothy J; Foster, Mark D

    2011-09-01

    Tailoring the structure of films deposited by plasma-enhanced chemical vapor deposition (PECVD) to specific applications requires a depth-resolved understanding of how the interface structures in such films are impacted by variations in deposition parameters such as feed position and plasma power. Analysis of complementary X-ray and neutron reflectivity (XR, NR) data provide a rich picture of changes in structure with feed position and plasma power, with those changes resolved on the nanoscale. For plasma-polymerized octafluorocyclobutane (PP-OFCB) films, a region of distinct chemical composition and lower cross-link density is found at the substrate interface for the range of processing conditions studied and a surface layer of lower cross-link density also appears when plasma power exceeds 40 W. Varying the distance of the feed from the plasma impacts the degree of cross-linking in the film center, thickness of the surface layer, and thickness of the transition region at the substrate. Deposition at the highest power, 65 W, both enhances cross-linking and creates loose fragments with fluorine content higher than the average. The thickness of the low cross-link density region at the air interface plays an important role in determining the width of the interface built with a layer subsequently deposited atop the first.

  18. Niobium thin film coating on a 500-MHz copper cavity by plasma deposition

    SciTech Connect

    Haipeng Wang; Genfa Wu; H. Phillips; Robert Rimmer; Anne-Marie Valente; Andy Wu

    2005-05-16

    A system using an Electron Cyclotron Resonance (ECR) plasma source for the deposition of a thin niobium film inside a copper cavity for superconducting accelerator applications has been designed and is being constructed. The system uses a 500-MHz copper cavity as both substrate and vacuum chamber. The ECR plasma will be created to produce direct niobium ion deposition. The central cylindrical grid is DC biased to control the deposition energy. This paper describes the design of several subcomponents including the vacuum chamber, RF supply, biasing grid and magnet coils. Operational parameters are compared between an operating sample deposition system and this system. Engineering work progress toward the first plasma creation will be reported here.

  19. Studies of Discharge Parameters Influence on the IPD Plasma Deposition Process

    SciTech Connect

    Rabinski, Marek; Zdunek, Krzysztof

    2006-01-15

    The paper presents recent studies of a current sheet dynamics influence on the surface engineering process of impulse plasma deposition (IPD). During the IPD process plasma is generated in the working gas due to a high-voltage high-current oscillating pulse discharge, ignited within an interelectrode region of a coaxial accelerator. The changes of plasma dynamics and generation mechanisms, e.g. the electric arc instead of the plasma sheet formation during the consecutive half-periods of discharge, cause the different deposition efficiency for accelerator with the outer electrode system composed of stainless steel rods instead of standard tubular one. The coating efficiency and deposited layer quality have been examined for the titanium nitride as the model material for surface engineering.

  20. Deposition of Hard Chrome Coating onto Heat Susceptible Substrates by Low Power Microwave Plasma Spray

    NASA Astrophysics Data System (ADS)

    Redza, Ahmad; Yasui, Toshiaki; Fukumoto, Masahiro

    2016-02-01

    Microwave plasma spray requires relatively low power, which is lower than 1 kW in comparison to other plasma spraying method. Until now, we are able to deposit Cu and Hydroxyapatite coating onto heat susceptible substrate, CFRP which are difficult for conventional plasma spray due to the excessive heat input. In this paper, a hard chromium coating was deposited onto SUS304 and CFRP by a low power microwave plasma spray technique. By controlling the working gas flow rate and spraying distance, a hard chrome coating with thickness of approximately 30 μm was successfully deposited onto CFRP substrate with hardness of 1110 Hv0.05. Furthermore, the coating produced here is higher than that produced by hard chrome plating.

  1. The effect of bias voltage on the morphology and wettability of plasma deposited titanium oxide films

    NASA Astrophysics Data System (ADS)

    Liu, Wei; Li, Yan; Guo, Kai; Zhang, Jing

    2008-02-01

    Hydrophobic and hydrophilic films with titanium oxide inside were grown by radio frequency plasma enhanced chemical vapor deposition (RF--PECVD) on glass substrates. Bias voltage was used as an assistant for the deposition process. And a comparison was made between with and without the bias voltage. Titanium tetraisopropoxide (TTIP-Ti (OC 3H 7) 4) was used as the precursor compound. Film wettability was tested by water contact angle measurement (CAM). The water contact angle (WAC) of the film deposited in plasma without biased voltage was greater than 145°, while the WAC of the film deposited in plasma with biased voltage was less than 30°. The morphology of the deposited films was observed by scanning electron microscope (SEM). It is found that the films grown without bias voltage were covered with lots of nano grain and pores, but the surface of the films deposition with bias voltage was much dense. The chemical structure and property of the deposited films were analyzed by Fourier-transformed infrared spectroscopy (FTIR), while the plasma phase was investigated by optical emission spectroscopy (OES).

  2. Carbon nanofiber growth in plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Denysenko, I.; Ostrikov, K.; Cvelbar, U.; Mozetic, M.; Azarenkov, N. A.

    2008-10-01

    A theoretical model to describe the plasma-assisted growth of carbon nanofibers (CNFs) is proposed. Using the model, the plasma-related effects on the nanofiber growth parameters, such as the growth rate due to surface and bulk diffusion, the effective carbon flux to the catalyst surface, the characteristic residence time and diffusion length of carbon atoms on the catalyst surface, and the surface coverages, have been studied. The dependence of these parameters on the catalyst surface temperature and ion and etching gas fluxes to the catalyst surface is quantified. The optimum conditions under which a low-temperature plasma environment can benefit the CNF growth are formulated. These results are in good agreement with the available experimental data on CNF growth and can be used for optimizing synthesis of related nanoassemblies in low-temperature plasma-assisted nanofabrication.

  3. Spectroscopic characterization of the plasmas formed during the deposition of ZnO and Al-doped ZnO films by plasma-assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Liang, Peipei; Cai, Hua; Yang, Xu; Li, Hui; Zhang, Wu; Xu, Ning; Sun, Jian; Wu, Jiada

    2016-11-01

    An oxygen-zinc plasma and an oxygen-zinc-aluminum plasma are formed by pulsed laser ablation of a Zn target or pulsed laser co-ablation of a Zn target and an Al target in an electron cyclotron resonance (ECR) discharge-generated oxygen plasma for the deposition of ZnO and Al-doped ZnO (AZO) films. The plasmas are characterized spectroscopically by time-integrated and time-resolved optical emission spectroscopy. Both the oxygen-zinc plasma and the oxygen-zinc-aluminum plasma contain excited species originally present in the working O2 gas and energetic species ablated from the targets. The optical emission of the oxygen-zinc-aluminum plasma is abundant in the emission bands of oxygen molecular ions and the emission lines of mono-atomic oxygen, zinc and aluminum atoms and atomic ions. The time-integrated spectra as well as the time-resolved spectra of the plasma emission indicate that the oxygen species in the ECR oxygen plasma experience additional excitation by the expanding ablation plumes, and the ablated species are excited frequently when traveling accompanying the plume expansion in the oxygen plasma, making the formed plasma highly excited and very reactive, which plays an important role in the reactive growth of ZnO matrix and the in-situ doping of Al into the growing ZnO matrix. The deposited ZnO and AZO films were evaluated for composition analysis by energy dispersive X-ray spectroscopy, structure characterization by X-ray diffraction and optical transmission measurement. The deposited ZnO is slightly rich in O. The Al concentration of the AZO films can be controlled and varied simply by changing the repetition rate of the laser used for Al target ablation. Both the ZnO and the AZO films are featured with hexagonal wurtzite crystal structure and exhibit high optical transparency in a wide spectral region. Al doping results in an improvement in the ultraviolet transparency, a blue shift in the absorption edge and a widening of the band gap.

  4. ZnO thin film deposition using colliding plasma plumes and single plasma plume: Structural and optical properties

    SciTech Connect

    Gupta, Shyam L. Thareja, Raj K.

    2013-12-14

    We report the comparative study on synthesis of thin films of ZnO on glass substrates using IR laser ablated colliding plasma plumes and conventional pulsed laser deposition using 355 nm in oxygen ambient. The optical properties of deposited films are characterized using optical transmission in the UV-visible range of spectrum and photoluminescence measurements. X-ray diffraction and atomic force microscopy are used to investigate the surface morphology of synthesized ZnO films. The films synthesized using colliding plumes created with 1064 nm are non-polar a-plane ZnO with transmission in UV-visible (300–800 nm) region ∼60% compared to polycrystalline thin film deposited using single plume which has chunk deposition and poor optical response. However, deposition with 355 nm single plume shows polar c-axis oriented thin film with average roughness (∼thickness) of ∼86 nm (∼850 nm) compared to ∼2 nm (∼3 μm) for 1064 nm colliding plumes. These observed differences in the quality and properties of thin films are attributed to the flux of mono-energetic plasma species with almost uniform kinetic energy and higher thermal velocity reaching the substrate from interaction/stagnation zone of colliding plasma plumes.

  5. Optical properties of silicon nitride films formed by plasma-chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Vlasukova, L. A.; Komarov, F. F.; Parkhomenko, I. N.; Milchanin, O. V.; Leont'ev, A. V.; Mudryi, A. V.; Togambaeva, A. K.

    2013-03-01

    The optical properties and structure of layers of silicon nitride deposited on silicon substrates by plasma-aided chemical vapor deposition at 300°C are studied by ellipsometry, Raman scattering, IR spectroscopy, and photoluminescence techniques. It is found that immediately after deposition the silicon nitride contains hydrogen in the form of Si-H bonds. Annealing (1100°C, 30 min) leads to dehydrogenation and densification of the nitride layer. An intense Si3N4 photoluminescence signal is detected in the green. Immediately after deposition the photoluminescence peak appears at 542 nm and annealing shifts it to shorter wavelengths.

  6. Plasma Spray-Physical Vapor Deposition (PS-PVD) of Ceramics for Protective Coatings

    NASA Technical Reports Server (NTRS)

    Harder, Bryan J.; Zhu, Dongming

    2011-01-01

    In order to generate advanced multilayer thermal and environmental protection systems, a new deposition process is needed to bridge the gap between conventional plasma spray, which produces relatively thick coatings on the order of 125-250 microns, and conventional vapor phase processes such as electron beam physical vapor deposition (EB-PVD) which are limited by relatively slow deposition rates, high investment costs, and coating material vapor pressure requirements. The use of Plasma Spray - Physical Vapor Deposition (PS-PVD) processing fills this gap and allows thin (< 10 microns) single layers to be deposited and multilayer coatings of less than 100 microns to be generated with the flexibility to tailor microstructures by changing processing conditions. Coatings of yttria-stabilized zirconia (YSZ) were applied to NiCrAlY bond coated superalloy substrates using the PS-PVD coater at NASA Glenn Research Center. A design-of-experiments was used to examine the effects of process variables (Ar/He plasma gas ratio, the total plasma gas flow, and the torch current) on chamber pressure and torch power. Coating thickness, phase and microstructure were evaluated for each set of deposition conditions. Low chamber pressures and high power were shown to increase coating thickness and create columnar-like structures. Likewise, high chamber pressures and low power had lower growth rates, but resulted in flatter, more homogeneous layers

  7. Effects of post-deposition argon implantation on the memory properties of plasma-deposited silicon nitride films

    NASA Astrophysics Data System (ADS)

    Shams, Q. A.; Brown, W. D.

    1989-10-01

    Post-deposition ion implantation has been used to introduce argon into plasma-enhanced chemically vapor deposited silicon nitride films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the metal-silicon nitride-silicon oxide-silicon structure. Argon was implanted into the SiH4 -NH3 -N2 deposited films at energies ranging from 25 to 75 keV, current densities ranging from 0.1 to 75 μA/cm2 and fluences ranging from 1×1012 to 1×1016 ions/cm2. Physical properties of the films were studied by ellipsometry and infrared spectroscopy, while high frequency capacitance-voltage (C-V) curves were used to obtain programming, retention, and endurance characteristics.

  8. Transport and Deposition of Hydrocarbons in the Plasma Generator PSI-2

    NASA Astrophysics Data System (ADS)

    Naujoks, D.; Bohmeyer, W.; Markin, A.; Arkhipov, I.; Carl, P.; Koch, B.; Reiner, H.-D.; Schröder, D.; Fussmann, G.

    A series of experiments dedicated to the analysis of transport and sticking of hydrocarbon molecules have been performed in the plasma generator PSI-2. As a source of hydrocarbons defined amounts of CH4 and C2H4 have been injected. After injection the molecules undergo a series of ionisation and dissociation reactions. The thickness change of deposited layers on temperature controlled collector surfaces (outside the plasma column) was measured in-situ by means of an optical spectroscopy for different plasma conditions (density, working gas, injection position) and as function of the collector temperature. It was found that the flux of atomic hydrogen mainly determines whether net-deposition or net-erosion occurs. For the simulation of the experiments the 3D Monte Carlo code ERO was applied allowing a numerical description of the emission, transport, deposition and re-erosion cycle of hydrocarbon molecules.

  9. Interaction of platelets, fibrinogen and endothelial cells with plasma deposited PEO-like films

    NASA Astrophysics Data System (ADS)

    Yang, Zhilu; Wang, Jin; Li, Xin; Tu, Qiufen; Sun, Hong; Huang, Nan

    2012-02-01

    For blood-contacting biomedical implants like retrievable vena cava filters, surface-based diagnostic devices or in vivo sensors, limiting thrombosis and cell adhesion is paramount, due to a decrease even failure in performance. Plasma deposited PEO-like films were investigated as surface modifications. In this work, mixed gas composed of tetraethylene glycol dimethyl ether (tetraglyme) vapor and oxygen was used as precursor. It was revealed that plasma polymerization under high ratio of oxygen/tetraglyme led to deposition of the films that had high content of ether groups. This kind of PEO-like films had good stability in phosphate buffer solution. In vitro hemocompatibility and endothelial cell (EC) adhesion revealed low platelet adhesion, platelet activation, fibrinogen adhesion, EC adhesion and proliferation on such plasma deposited PEO-like films. This made it a potential candidate for the applications in anti-fouling surfaces of blood-contacting biomedical devices.

  10. Plasma-Enhanced Chemical Vapor Deposition as a Method for the Deposition of Peptide Nanotubes

    DTIC Science & Technology

    2013-09-17

    45432, United States Distribution A: Approved for public release; distribution is unlimited. 2    Introduction: The unique ability of dipeptides ...Using physical vapor deposition (PVD) well-ordered assemblies of peptide nanotubes (PNTs) composed of dipeptide subunits are obtained on various...the PECVD deposition chamber with sublimation capability in the laboratory of Dr. Rajesh Naik (AFRL/RXAS) and conditions were modified for dipeptide

  11. RF-plasma vapor deposition of siloxane on paper. Part 1: Physical evolution of paper surface

    NASA Astrophysics Data System (ADS)

    Sahin, Halil Turgut

    2013-01-01

    An alternative, new approach to improve the hydrophobicity and barrier properties of paper was evaluated by radio-frequency (RF) plasma octamethylcyclotetrasiloxane (OMCTSO) vapor treatment. The interaction between OMCTSO and paper, causing the increased hydophobicity, is likely through covalent bonding. The deposited thin silicone-like polymeric layer from OMCTSO plasma treatment possessed desirable hydrophobic properties. The SEM micrographs showed uniformly distributed grainy particles with various shapes on the paper surface. Deposition of the silicone polymer-like layer with the plasma treatment affects the distribution of voids in the network structure and increases the barrier against water intake and air. The water absorptivity was reduced by 44% for the OMCTSO plasma treated sheet. The highest resistance to air flow was an approximately 41% lower air permeability than virgin paper.

  12. Characterisation of the TiO2 coatings deposited by plasma spraying

    NASA Astrophysics Data System (ADS)

    Benea, M. L.; Benea, L. P.

    2016-02-01

    Plasma spraying of materials such as ceramics and non-metals, which have high melting points, has become a well-established commercial process. Such coatings are increasingly used in aerospace, automobile, textile, medical, printing and electrical industries to impart proprieties such as corrosion resistance, thermal resistance, wear resistance, etc. One of the most important characteristics of thermal barrier coatings is the ability to undergo fast temperature changes without failing, the so called thermal shock resistance. The formation of residual stresses in plasma sprayed ceramic and metallic coatings is a very complex process. Several factors, such as substrate material, substrate thickness, physical properties of both the substrate and the coating material, deposition rate, relative velocity of the plasma torch, etc. determine the final residual stress state of the coating at room temperature. Our objective is to characterize the titanium oxide and aluminium oxide coatings deposited by plasma spraying in structural terms, the resistance to thermal shock and residual stresses.

  13. Plasma source ion implantation to increase the adhesion of subsequently deposited coatings

    SciTech Connect

    Wood, B.P.; Walter, K.C.; Taylor, T.N.

    1997-10-01

    In Plasma Source Ion Implantation (PSII) an object is placed in a plasma and pulse biased to a high negative potential, so as to implant the plasma ions into the surface of the object. Although ion implantation, by itself, can yield desirable surface modification, it is even more useful as a method of creating a functionally graded interface between the substrate material and a subsequently deposited coating, which may be produced by altering operating conditions on the same plasma source. Although this interfacial region is very thin - as little as 20 nm - it can greatly increase the adhesion of the deposited coatings. We present here a description of this process, and compare a simulation of the graded interface with an XPS depth profile of the interfacial region for erbium metal implanted into steel.

  14. Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

    NASA Astrophysics Data System (ADS)

    Tarala, V. A.; Altakhov, A. S.; Martens, V. Ya; Lisitsyn, S. V.

    2015-11-01

    Aluminum nitride films have been grown by Plasma-Enhanced Atomic Layer Deposition method. It was found that at temperatures of 250 °C and 280 °C increase of the plasma exposure step duration over 6 s, as well as increase of reactor purge step duration over 1 s does not affect the growth rate, however, it affects the microstructure of the films. It was found that crystalline aluminum nitride films deposit with plasma exposure duration over 10 s and the reactor purging over 10 s. When the temperature drops the increase of reactor purge step duration and plasma exposure step duration over 20 s is required for crystalline AlN film growth.

  15. On the decomposition of silane in plasma deposition reactors

    SciTech Connect

    DeJoseph, C.A.; Haaland, P.D.; Garscadden, A.

    1986-04-01

    In a low-pressure discharge, plasma-enhanced decomposition of silane proceeds by various channels including electron-impact, ion- and radical-induced, and heterogeneous reactions. The results of several experiments are presented to clarify the relative importance of the processes. The conclusions of these studies and associated analysis are that the dominant processes are strongly influenced by the gas residence time, the power density input, and the electronegative characteristics of the silane discharge.

  16. Induced carbon deposition by local hydrocarbon injection into detached divertor plasmas in JET

    NASA Astrophysics Data System (ADS)

    Jet Efda Contributors Airila, M. I.; Coad, J. P.; Brezinsek, S.; Belo, P.; Groth, M.; Kirschner, A.; Makkonen, T.; Stamp, M. F.; Strachan, J. D.; Widdowson, A. M.; Wiesen, S.

    2011-08-01

    During detachment experiments of JET in 2007 (Brezinsek et al., 2009 [1]), 1 × 1022 molecules of 12CD4 were injected at a rate of about 5 × 1020 s-1 into L-mode plasma. The injection was done at the outer strike point in the centre of the horizontal target, just before opening the machine. The deposited layers were analyzed for deuterium post mortem after the removal of tiles. The heaviest local D deposition density is found immediately upstream of the gas inlet, but downstream the deposition is found over a larger area. In total, 3.7 × 1020 deuterium atoms were found locally deposited; if the mean D/C in the deposits is 0.4, then about 10% of the injected carbon was locally deposited. Transport and local deposition of the injected carbon was modeled with the 3D Monte Carlo impurity transport code ERO (Kirschner et al., 2000 [2]). The plasma background was generated with the onion-skin solver of the DIVIMP code (Stangeby and Elder, 1992 [3]). Locally deposited fraction is reproduced with ERO but the distribution not satisfactorily. In particular the poloidal transport of carbon is several times weaker than measured.

  17. Plasma and Laser-Enhanced Deposition of Powders and Thin Films.

    NASA Astrophysics Data System (ADS)

    David, Moses

    The objective of this thesis has been the development of novel plasma and laser based techniques for the deposition and characterization of thin films and nano-scale powders. The different energy sources utilized for excitation and break -down of reactive species prior to deposition include an RF plasma discharge, an excimer laser and a CO _2 laser. Nanometer-scale (10-20 nm) powders and thin films of aluminum nitride (AlN) have been successfully deposited in a glow discharge by reacting trimethylaluminum and ammonia. Macroquantities (~800 mg/hr) of powder have been collected at the centers of two vortices around which the reactant gases swirl. Powders of AlN have large surface areas (85 m^2/g) and are free from oxygen contamination. Diamond-like-carbon (DLC) films have been deposited from ternary mixtures of butadiene, argon and hydrogen. DLC films have been etched in O _2 and CF_4/O _2 plasmas. The etching behavior was correlated with the deposition feed gas composition by combining the etch rate, bias voltage during deposition and the deposition rate into a new non-dimensional number. Two new processes for depositing copper films have been developed. The first technique involves the hydrogen plasma reduction of copper formate films and the second technique involves the reactive excimer laser ablation of copper formate. Particle forming plasmas have been characterized by measuring the light scattering intensity during the deposition of silicon nitride from silane/ammonia plasmas. Both spatial variations and transients during the plasma start -up and shut-off steps have been measured. The ultraviolet (vacuum ultraviolet and extreme ultraviolet) reflectance characteristics of AlN, DLC and SiC thin films has been measured. AlN and SiC films exhibit a relatively high (~20-40%) reflectance in the different regions of the ultraviolet spectrum. An improved algorithm has been developed for estimating thin film parameters such as thickness, refractive index, band-gap, and

  18. Development of plasma assisted thermal vapor deposition technique for high-quality thin film

    NASA Astrophysics Data System (ADS)

    Lee, Kang-Il; Choi, Yong Sup; Park, Hyun Jae

    2016-12-01

    The novel technique of Plasma-Assisted Vapor Deposition (PAVD) is developed as a new deposition method for thin metal films. The PAVD technique yields a high-quality thin film without any heating of the substrate because evaporated particles acquire energy from plasma that is confined to the inside of the evaporation source. Experiments of silver thin film deposition have been carried out in conditions of pressure lower than 10-3 Pa. Pure silver plasma generation is verified by the measurement of the Ag-I peak using optical emission spectroscopy. A four point probe and a UV-VIS spectrophotometer are used to measure the electrical and optical properties of the silver film that is deposited by PAVD. For an ultra-thin silver film with a thickness of 6.5 nm, we obtain the result of high-performance silver film properties, including a sheet resistance <20 Ω sq-1 and a visible-range transmittance >75%. The PAVD-film properties show a low sheet resistance of 30% and the same transmittance with conventional thermal evaporation film. In the PAVD source, highly energetic particles and UV from plasma do not reach the substrate because the plasma is completely shielded by the optimized nozzle of the crucible. This new PAVD technique could be a realistic solution to improve the qualities of transparent electrodes for organic light emission device fabrication without causing damage to the organic layers.

  19. Development of plasma assisted thermal vapor deposition technique for high-quality thin film.

    PubMed

    Lee, Kang-Il; Choi, Yong Sup; Park, Hyun Jae

    2016-12-01

    The novel technique of Plasma-Assisted Vapor Deposition (PAVD) is developed as a new deposition method for thin metal films. The PAVD technique yields a high-quality thin film without any heating of the substrate because evaporated particles acquire energy from plasma that is confined to the inside of the evaporation source. Experiments of silver thin film deposition have been carried out in conditions of pressure lower than 10(-3) Pa. Pure silver plasma generation is verified by the measurement of the Ag-I peak using optical emission spectroscopy. A four point probe and a UV-VIS spectrophotometer are used to measure the electrical and optical properties of the silver film that is deposited by PAVD. For an ultra-thin silver film with a thickness of 6.5 nm, we obtain the result of high-performance silver film properties, including a sheet resistance <20 Ω sq(-1) and a visible-range transmittance >75%. The PAVD-film properties show a low sheet resistance of 30% and the same transmittance with conventional thermal evaporation film. In the PAVD source, highly energetic particles and UV from plasma do not reach the substrate because the plasma is completely shielded by the optimized nozzle of the crucible. This new PAVD technique could be a realistic solution to improve the qualities of transparent electrodes for organic light emission device fabrication without causing damage to the organic layers.

  20. Aerosol-assisted plasma deposition of hydrophobic polycations makes surfaces highly antimicrobial.

    PubMed

    Liu, Harris; Kim, Yoojeong; Mello, Kerrianne; Lovaasen, John; Shah, Apoorva; Rice, Norman; Yim, Jacqueline H; Pappas, Daphne; Klibanov, Alexander M

    2014-02-01

    The currently used multistep chemical synthesis for making surfaces antimicrobial by attaching to them hydrophobic polycations is replaced herein by an aerosol-assisted plasma deposition procedure. To this end, N,N-hexyl,methyl-PEI (HMPEI) is directly plasma-coated onto a glass surface. The resultant immobilized HMPEI coating has been thoroughly characterized and shown to be robust, bactericidal against Escherichia coli, and virucidal against human influenza virus.

  1. Plasma-Arc Deposited Elemental Boron Film for use as a Durable Nonstick Coating

    DTIC Science & Technology

    2007-09-01

    COOKWARE BORON PLASMA ARCS MAGNETIC PROPERTIES FILTERED VACUUM CATHODIC ARC 19a. NAME OF RESPONSIBLE PERSON 16. SECURITY CLASSIFICATION OF: a... magnetic ducting system, which would filter out macroparticles (particle debris from the cathode) and expand the boron plasma to produce a uniform, debris...current. In addition to the high rate of material production, vacuum arc deposition also benefits from the fact that the output vapor is in a fully

  2. Silicon carbon alloy thin film depositions using electron cyclotron resonance microwave plasmas

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Pool, F. S.

    1990-01-01

    Amorphous and microcrystalline silicon carbon films (a-SiC:H, micro-c-SiC:H) have been deposited using SiH4, CH4 and H2 mixed gas ECR (electron cyclotron resonance) plasmas. The optical bandgap of a-SiC:H films is not dependent on the hydrogen dilution in the ECR plasma. The deposition rate of a-SiC:H films is found to be strongly dependent on the ECR magnetic field and the hydrogen dilution. The hydrogen dilution effect on the deposition rate indicates that the etching in ECR hydrogen plasmas plays an important role in the deposition of a-SiC:H films. The optical constants n and k of ECR-deposited a-SiC:H films in the wavelength region of 0.4 to 1.0 micron are determined to be 2.03-1.90 and 0.04-0.00, respectively. The microstructures of ECR-deposited micro-c-SiC:H films are shown by X-ray diffraction and SEM (scanning electron microscopy) to be composed of 1000-A alpha-SiC microcrystallites and amorphous network structures.

  3. Optical emission diagnostics of plasmas in chemical vapor deposition of single-crystal diamond

    SciTech Connect

    Hemawan, Kadek W.; Hemley, Russell J.

    2015-08-03

    Here, a key aspect of single crystal diamond growth via microwave plasma chemical vapor deposition is in-process control of the local plasma-substrate environment, that is, plasma gas phase concentrations of activated species at the plasma boundary layer near the substrate surface. Emission spectra of the plasma relative to the diamond substrate inside the microwave plasma reactor chamber have been analyzed via optical emission spectroscopy. The spectra of radical species such as CH, C2, and H (Balmer series) important for diamond growth were found to be more depndent on operating pressure than on microwave power. Plasma gas temperatures were calculated from measurements of the C2 Swan band (d3Π → a3Π transition) system. The plasma gas temperature ranges from 2800 to 3400 K depending on the spatial location of the plasma ball, microwave power and operating pressure. Addition of Ar into CH4 + H2 plasma input gas mixture has little influence on the Hα, Hβ, and Hγ intensities and single-crystal diamond growth rates.

  4. Optical emission diagnostics of plasmas in chemical vapor deposition of single-crystal diamond

    DOE PAGES

    Hemawan, Kadek W.; Hemley, Russell J.

    2015-08-03

    Here, a key aspect of single crystal diamond growth via microwave plasma chemical vapor deposition is in-process control of the local plasma-substrate environment, that is, plasma gas phase concentrations of activated species at the plasma boundary layer near the substrate surface. Emission spectra of the plasma relative to the diamond substrate inside the microwave plasma reactor chamber have been analyzed via optical emission spectroscopy. The spectra of radical species such as CH, C2, and H (Balmer series) important for diamond growth were found to be more depndent on operating pressure than on microwave power. Plasma gas temperatures were calculated frommore » measurements of the C2 Swan band (d3Π → a3Π transition) system. The plasma gas temperature ranges from 2800 to 3400 K depending on the spatial location of the plasma ball, microwave power and operating pressure. Addition of Ar into CH4 + H2 plasma input gas mixture has little influence on the Hα, Hβ, and Hγ intensities and single-crystal diamond growth rates.« less

  5. Plasma plume dynamics in magnetically assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Haverkamp, J. D.; Bourham, M. A.; Du, S.; Narayan, J.

    2009-01-01

    The expansion of a laser produced plasma perpendicular to a magnetic field is studied with a quadruple Langmuir probe and a B-dot probe. In regions where the kinetic beta is less than one, we find plume deceleration and weak displacement of the magnetic field. As the plume expands into regions of weak magnetic field, plume deceleration stops and the displacement of the magnetic field is large. The diffusion time of the magnetic field lines was consistent with anomalously large resistivity driven by the presence of an instability. Electron temperatures are larger than in the field-free case due to Ohmic heating mediated by the anomalously large resistivity.

  6. Microstructural modification of nc-Si/SiOx films during plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhang, X. W.

    2005-07-01

    Nanocrystalline-silicon embedded silicon oxide films are prepared by plasma-enhanced chemical vapor deposition (PECVD) at 300 °C without post-heat treatment. Measurements of XPS, IR, XRD, and HREM are performed. Microstructural modifications are found occurring throughout the film deposition. The silica network with a high oxide state is suggested to be formed directly under the abduction of the former deposited layer, rather than processing repeatedly from the original low-oxide state of silica. Nanocrystalline silicon particles with a size of 6-10 nm are embedded in the SiOx film matrix, indicating the potential application in Si-based optoelectronic integrity.

  7. Plasma-based ion implantation and deposition: A review of physics,technology, and applications

    SciTech Connect

    Pelletier, Jacques; Anders, Andre

    2005-05-16

    After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes used of PBII&D to produce surgical implants, bio- and blood-compatible surfaces and coatings, etc. With limitations, also non-conducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few eV up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process non-flat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures. We use the acronym PBII&D when referring to both implantation and deposition, while PBIID implies that deposition is part of the process.

  8. Deposition of hybrid organic-inorganic composite coatings using an atmospheric plasma jet system.

    PubMed

    Dembele, Amidou; Rahman, Mahfujur; Reid, Ian; Twomey, Barry; MacElroy, J M Don; Dowling, Denis P

    2011-10-01

    The objective of this study is to investigate the influence of alcohol addition on the incorporation of metal oxide nanoparticles into nm thick siloxane coatings. Titanium oxide (TiO2) nanoparticles with diameters of 30-80 nm were incorporated into an atmospheric plasma deposited tetramethylorthosilicate (TMOS) siloxane coating. The TMOS/TiO2 coating was deposited using the atmospheric plasma jet system known as PlasmaStream. In this system the liquid precursor/nanoparticle mixture is nebulised into the plasma. It was observed that prior to being nebulised the TiO2 particles agglomerated and settled over time in the TMOS/TiO2 mixture. In order to obtain a more stable nanoparticle/TMOS suspension the addition of the alcohols methanol, octanol and pentanol to this mixture was investigated. The addition of each of these alcohols was found to stabilise the nanoparticle suspension. The effect of the alcohol was therefore assessed with respect to the properties of the deposited coatings. It was observed that coatings deposited from TMOS/TiO2, with and without the addition of methanol were broadly similar. In contrast the coatings deposited with octanol and pentanol addition to the TMOS/TiO2 mixture were significantly thicker, for a given set of deposition parameters and were also more homogeneous. This would indicate that the alcohol precursor was incorporated into the plasma polymerised siloxane. The incorporation of the organic functionality from the alcohols was confirmed from FTIR spectra of the coatings. The difference in behaviour with alcohol type is likely to be due to the lower boiling point of methanol (65 degrees C), which is lower than the maximum plasma temperature measured at the jet orifice (77 degrees C). This temperature is significantly lower than the 196 degrees C and 136 degrees C boiling points of octanol and pentanol respectively. The friction of the coatings was determined using the Pin-on-disc technique. The more organic coatings deposited with

  9. Formation of Iron Carbide Nanorod by Pulsed Plasma Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Yooyen, S.; Kawamura, T.; Kotake, S.; Suzuki, Y.

    2010-11-01

    Iron carbide nanorods were produced on the surface of pure iron sheet by means of pulsed plasma chemical vapor deposition. Hydrogen plasma was used in the initial state, varied from 10 to 60 minute, for the purpose of cleaning and preparing nanoparticles. The formation was done under methane atmosphere, varied from 2 to 30 minute. X-ray diffraction (XRD) patterns analysis showed that iron carbide was found on all of these experiment conditions. By field emission scanning electron micro spectroscopy (FESEM) observation, iron carbide nanorods, however, were found neatly only on the methane plasma treating at 10 minute.

  10. Energy deposition in parallel-plate plasma accelerators. Ph.D. Thesis

    NASA Technical Reports Server (NTRS)

    Dicapua, M. S.

    1971-01-01

    To appraise the ratio of energy deposition into kinetic and thermal modes in plasma accelerators, a parallel-plate plasma accelerator has been operated in the quasi-steady mode with current pulses in the range of 10 to 100 kilo-amperes (kA), durations of the order of one millisecond, and argon mass flows up to 100 grams/sec. From photographic observations, spectroscopic measurements of velocity and electron density, and pressure measurements with a fast-rise piezoelectric transducer it is found that, for currents between 50 and 90 kA, the accelerated argon plasma is supersonic with ion velocities of 5 to 6 kilometers/sec.

  11. Energy deposition of heavy ions in the regime of strong beam-plasma correlations.

    PubMed

    Gericke, D O; Schlanges, M

    2003-03-01

    The energy loss of highly charged ions in dense plasmas is investigated. The applied model includes strong beam-plasma correlation via a quantum T-matrix treatment of the cross sections. Dynamic screening effects are modeled by using a Debye-like potential with a velocity dependent screening length that guarantees the known low and high beam velocity limits. It is shown that this phenomenological model is in good agreement with simulation data up to very high beam-plasma coupling. An analysis of the stopping process shows considerably longer ranges and a less localized energy deposition if strong coupling is treated properly.

  12. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

    SciTech Connect

    Dechana, A.; Thamboon, P.; Boonyawan, D.

    2014-10-15

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al{sub 2}O{sub 3} layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al{sub 2}O{sub 3} films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

  13. From plasma immersion ion implantation to deposition: A historical perspective on principles and trends

    SciTech Connect

    Anders, Andre

    2001-06-14

    Plasma immersion techniques of surface modification are known under a myriad of names. The family of techniques reaches from pure plasma ion implantation, to ion implantation and deposition hybrid modes, to modes that are essentially plasma film deposition with substrate bias. In the most general sense, all plasma immersion techniques have in common that the surface of a substrate (target) is exposed to plasma and that relatively high substrate bias is applied. The bias is usually pulsed. In this review, the roots of immersion techniques are explored, some going back to the 1800s, followed by a discussion of the groundbreaking works of Adler and Conrad in the 1980s. In the 1990s, plasma immersion techniques matured in theoretical understanding, scaling, and the range of applications. First commercial facilities are now operational. Various immersion concepts are compiled and explained in this review. While gas (often nitrogen) ion implantation dominated the early years, film-forming immersion techniques and semiconductor processing gained importance. In the 1980s and 1990s we have seen exponential growth of the field but signs of slowdown are clear since 1998. Nevertheless, plasma immersion techniques have found, and will continue to have, an important place among surface modification techniques.

  14. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber.

    PubMed

    Dechana, A; Thamboon, P; Boonyawan, D

    2014-10-01

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films-analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques-will be discussed.

  15. Photocatalytic property of titanium dioxide thin films deposited by radio frequency magnetron sputtering in argon and water vapour plasma

    NASA Astrophysics Data System (ADS)

    Sirghi, L.; Hatanaka, Y.; Sakaguchi, K.

    2015-10-01

    The present work is investigating the photocatalytic activity of TiO2 thin films deposited by radiofrequency magnetron sputtering of a pure TiO2 target in Ar and Ar/H2O (pressure ratio 40/3) plasmas. Optical absorption, structure, surface morphology and chemical structure of the deposited films were comparatively studied. The films were amorphous and included a large amount of hydroxyl groups (about 5% of oxygen atoms were bounded to hydrogen) irrespective of the intentional content of water in the deposition chamber. Incorporation of hydroxyl groups in the film deposited in pure Ar plasma is explained as contamination of the working gas with water molecules desorbed by plasma from the deposition chamber walls. However, intentional input of water vapour into the discharge chamber decreased the deposition speed and roughness of the deposited films. The good photocatalytic activity of the deposited films could be attributed hydroxyl groups in their structures.

  16. Characterization of bismuth nanospheres deposited by plasma focus device

    SciTech Connect

    Ahmad, M.; Al-Hawat, Sh.; Akel, M.; Mrad, O.

    2015-02-14

    A new method for producing thin layer of bismuth nanospheres based on the use of low energy plasma focus device is demonstrated. Various techniques such as scanning electron microscopy, Rutherford backscattering spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy have been used to characterize the morphology and the composition of the nanospheres. Experimental parameters may be adjusted to favour the formation of bismuth nanospheres instead of microspheres. Therefore, the formation of large surface of homogeneous layer of bismuth nanospheres with sizes of below 100 nm can be obtained. The natural snowball phenomenon is observed to be reproduced in nanoscale where spheres roll over the small nanospheres and grow up to bigger sizes that can reach micro dimensions. The comet-like structure, a reverse phenomenon to snowball is also observed.

  17. Patterning and Characterization of Carbon Nanotubes Grown in a Microwave Plasma Enhanced Chemical Vapor Deposition Chamber

    DTIC Science & Technology

    2009-03-01

    determined optically through scanning electron microscope images. carbon nanotubes, field emission, microwave plasma enhanced chemical vapor deposition U U U...PECVD) 13 2.3 Carbon Nanotube Properties . . . . . . . . . . . . . . . 22 2.4 Applications of Carbon Nanotubes . . . . . . . . . . . . 24 2.4.1...Multi-walled Carbon Nanotube . . . . . . . . . . . . . . . 6 TEM Transmission Electron Microscope . . . . . . . . . . . . . 6 SWCNT Single-walled Carbon

  18. Plasma deposition of silver nanoparticles on ultrafiltration membranes: antibacterial and anti-biofouling properties.

    PubMed

    Cruz, Mercedes Cecilia; Ruano, Gustavo; Wolf, Marcus; Hecker, Dominic; Vidaurre, Elza Castro; Schmittgens, Ralph; Rajal, Verónica Beatriz

    2015-02-01

    A novel and versatile plasma reactor was used to modify Polyethersulphone commercial membranes. The equipment was applied to: i) functionalize the membranes with low-temperature plasmas, ii) deposit a film of poly(methyl methacrylate) (PMMA) by Plasma Enhanced Chemical Vapor Deposition (PECVD) and, iii) deposit silver nanoparticles (SNP) by Gas Flow Sputtering. Each modification process was performed in the same reactor consecutively, without exposure of the membranes to atmospheric air. Scanning electron microscopy and transmission electron microscopy were used to characterize the particles and modified membranes. SNP are evenly distributed on the membrane surface. Particle fixation and transport inside membranes were assessed before- and after-washing assays by X-ray photoelectron spectroscopy depth profiling analysis. PMMA addition improved SNP fixation. Plasma-treated membranes showed higher hydrophilicity. Anti-biofouling activity was successfully achieved against Gram-positive (Enterococcus faecalis) and -negative (Salmonella Typhimurium) bacteria. Therefore, disinfection by ultrafiltration showed substantial resistance to biofouling. The post-synthesis functionalization process developed provides a more efficient fabrication route for anti-biofouling and anti-bacterial membranes used in the water treatment field. To the best of our knowledge, this is the first report of a gas phase condensation process combined with a PECVD procedure in order to deposit SNP on commercial membranes to inhibit biofouling formation.

  19. Plasma deposition of silver nanoparticles on ultrafiltration membranes: antibacterial and anti-biofouling properties

    PubMed Central

    Cruz, Mercedes Cecilia; Ruano, Gustavo; Wolf, Marcus; Hecker, Dominic; Vidaurre, Elza Castro; Schmittgens, Ralph; Rajal, Verónica Beatriz

    2015-01-01

    A novel and versatile plasma reactor was used to modify Polyethersulphone commercial membranes. The equipment was applied to: i) functionalize the membranes with low-temperature plasmas, ii) deposit a film of poly(methyl methacrylate) (PMMA) by Plasma Enhanced Chemical Vapor Deposition (PECVD) and, iii) deposit silver nanoparticles (SNP) by Gas Flow Sputtering. Each modification process was performed in the same reactor consecutively, without exposure of the membranes to atmospheric air. Scanning electron microscopy and transmission electron microscopy were used to characterize the particles and modified membranes. SNP are evenly distributed on the membrane surface. Particle fixation and transport inside membranes were assessed before- and after-washing assays by X-ray photoelectron spectroscopy depth profiling analysis. PMMA addition improved SNP fixation. Plasma-treated membranes showed higher hydrophilicity. Anti-biofouling activity was successfully achieved against Gram-positive (Enterococcus faecalis) and -negative (Salmonella Typhimurium) bacteria. Therefore, disinfection by ultrafiltration showed substantial resistance to biofouling. The post-synthesis functionalization process developed provides a more efficient fabrication route for anti-biofouling and anti-bacterial membranes used in the water treatment field. To the best of our knowledge, this is the first report of a gas phase condensation process combined with a PECVD procedure in order to deposit SNP on commercial membranes to inhibit biofouling formation. PMID:26166926

  20. Correlations between plasma variables and the deposition process of Si films from chlorosilanes in low pressure RF plasma of argon and hydrogen

    NASA Technical Reports Server (NTRS)

    Avni, R.; Carmi, U.; Grill, A.; Manory, R.; Grossman, E.

    1984-01-01

    The dissociation of chlorosilanes to silicon and its deposition on a solid substrate in a RF plasma of mixtures of argon and hydrogen were investigated as a function of the macrovariables of the plasma. The dissociation mechanism of chlorosilanes and HCl as well as the formation of Si in the plasma state were studied by sampling the plasma with a quadrupole mass spectrometer. Macrovariables such as pressure, net RF power input and locations in the plasma reactor strongly influence the kinetics of dissociation. The deposition process of microcrystalline silicon films and its chlorine contamination were correlated to the dissociation mechanism of chlorosilanes and HCl.

  1. Oxygen-Plasma-Treated Indium-Tin-Oxide Films on Nonalkali Glass Deposited by Super Density Arc Plasma Ion Plating

    NASA Astrophysics Data System (ADS)

    Kim, Soo Young; Hong, Kihyon; Son, Jun Ho; Jung, Gwan Ho; Lee, Jong-Lam; Choi, Kyu Han; Song, Kyu Ho; Ahn, Kyung Chul

    2008-02-01

    The effects of O2 plasma treatment on both the chemical composition and work function of an indium-tin-oxide (ITO) film were investigated. ITO films were deposited on non-alkali glass substrate by super density arc plasma ion plating for application in active-matrix organic light-emitting diodes (OLEDs). The water contact angle decreased from 38 to 11° as the ITO films were treated with O2 plasma for 60 s at a plasma power of 150 W, indicating an increase in the hydrophilicity of the surface. It was found that there were no distinct changes in the microstructure or electrical properties of the ITO films with O2 plasma treatment. Synchrotron radiation photoemission spectroscopy data revealed that O2 plasma treatment decreased the amount of carbon contamination and increased the number of unscreened states of In3+ and (O2)2- peroxo species. This played the role of increasing the work function of the ITO films by 1.7 eV. As a result, the turn-on voltage of the OLED decreased markedly from 24 to 8 V and the maximum luminance value of the OLED increased to 2500 cd/m2.

  2. Optical emission diagnostics of plasmas in chemical vapor deposition of single-crystal diamond

    SciTech Connect

    Hemawan, Kadek W. Hemley, Russell J.

    2015-11-15

    A key aspect of single crystal diamond growth via microwave plasma chemical vapor deposition is in-process control of the local plasma–substrate environment, that is, plasma gas phase concentrations of activated species at the plasma boundary layer near the substrate surface. Emission spectra of the plasma relative to the diamond substrate inside the microwave plasma reactor chamber have been analyzed via optical emission spectroscopy. The spectra of radical species such as CH, C{sub 2}, and H (Balmer series) important for diamond growth were identified and analyzed. The emission intensities of these electronically excited species were found to be more dependent on operating pressure than on microwave power. Plasma gas temperatures were calculated from measurements of the C{sub 2} Swan band (d{sup 3}Π → a{sup 3}Π transition) system. The plasma gas temperature ranges from 2800 to 3400 K depending on the spatial location of the plasma ball, microwave power and operating pressure. Addition of Ar into CH{sub 4}+H{sub 2} plasma input gas mixture has little influence on the Hα, Hβ, and Hγ intensities and single-crystal diamond growth rates.

  3. D majority heating in JET plasmas: ICRH modelling and experimental RF deposition

    SciTech Connect

    Lerche, E.; Eester, D. van; Lamalle, P.; Krasilnikov, A.

    2007-09-28

    Recent experiments in JET have provided information on the potential of using majority RF heating schemes in large plasmas. Adopting a wide range of available diagnostics, the plasma behaviour was monitored. The main results of the experiments are that--due to the poor antenna coupling at low frequency, the low (Ohmic) plasma temperature and the reduced RF electric field amplitude near the ion-cyclotron resonance layer of the majority ions--ICRH alone is barely capable of heating the plasma. On the other hand, when preheating the plasma using neutral beam injection, the wave-plasma coupling is noticeably improved and considerable plasma heating, followed by increased neutron yield were observed in several diagnostics. This effect is not only attributed to the lower collisionality of the pre-heated plasma but also to the Doppler-shifted IC absorption of the fast beam ions. By studying the response of the plasma to sudden changes in the RF power level, the experimental power deposition profiles were determined and compared to theoretical predictions. The numerical modelling was done adopting a coupled wave/Fokker-Planck code that enables accounting for the non-Maxwellian distributions of the RF heated particles and the injected beam ions in the wave equation, and for the actual local RF fields in the Fokker-Planck description. The theoretical results confirm the experimental finding that the beam ions do play a crucial role in this heating scheme.

  4. Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches.

    PubMed

    Erkens, I J M; Verheijen, M A; Knoops, H C M; Keuning, W; Roozeboom, F; Kessels, W M M

    2017-02-07

    To date, conventional thermal atomic layer deposition (ALD) has been the method of choice to deposit high-quality Pt thin films grown typically from (MeCp)PtMe3 vapor and O2 gas at 300 °C. Plasma-assisted ALD of Pt using O2 plasma can offer several advantages over thermal ALD, such as faster nucleation and deposition at lower temperatures. In this work, it is demonstrated that plasma-assisted ALD at 300 °C also allows for the deposition of highly conformal Pt films in trenches with high aspect ratio ranging from 3 to 34. Scanning electron microscopy inspection revealed that the conformality of the deposited Pt films was 100% in trenches with aspect ratio (AR) up to 34. These results were corroborated by high-precision layer thickness measurements by transmission electron microscopy for trenches with an aspect ratio of 22. The role of the surface recombination of O-radicals and the contribution of thermal ALD reactions is discussed.

  5. Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches

    NASA Astrophysics Data System (ADS)

    Erkens, I. J. M.; Verheijen, M. A.; Knoops, H. C. M.; Keuning, W.; Roozeboom, F.; Kessels, W. M. M.

    2017-02-01

    To date, conventional thermal atomic layer deposition (ALD) has been the method of choice to deposit high-quality Pt thin films grown typically from (MeCp)PtMe3 vapor and O2 gas at 300 °C. Plasma-assisted ALD of Pt using O2 plasma can offer several advantages over thermal ALD, such as faster nucleation and deposition at lower temperatures. In this work, it is demonstrated that plasma-assisted ALD at 300 °C also allows for the deposition of highly conformal Pt films in trenches with high aspect ratio ranging from 3 to 34. Scanning electron microscopy inspection revealed that the conformality of the deposited Pt films was 100% in trenches with aspect ratio (AR) up to 34. These results were corroborated by high-precision layer thickness measurements by transmission electron microscopy for trenches with an aspect ratio of 22. The role of the surface recombination of O-radicals and the contribution of thermal ALD reactions is discussed.

  6. Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma.

    PubMed

    Knoops, Harm C M; Braeken, Eline M J; de Peuter, Koen; Potts, Stephen E; Haukka, Suvi; Pore, Viljami; Kessels, Wilhelmus M M

    2015-09-09

    Atomic layer deposition (ALD) of silicon nitride (SiNx) is deemed essential for a variety of applications in nanoelectronics, such as gate spacer layers in transistors. In this work an ALD process using bis(tert-butylamino)silane (BTBAS) and N2 plasma was developed and studied. The process exhibited a wide temperature window starting from room temperature up to 500 °C. The material properties and wet-etch rates were investigated as a function of plasma exposure time, plasma pressure, and substrate table temperature. Table temperatures of 300-500 °C yielded a high material quality and a composition close to Si3N4 was obtained at 500 °C (N/Si=1.4±0.1, mass density=2.9±0.1 g/cm3, refractive index=1.96±0.03). Low wet-etch rates of ∼1 nm/min were obtained for films deposited at table temperatures of 400 °C and higher, similar to that achieved in the literature using low-pressure chemical vapor deposition of SiNx at >700 °C. For novel applications requiring significantly lower temperatures, the temperature window from room temperature to 200 °C can be a solution, where relatively high material quality was obtained when operating at low plasma pressures or long plasma exposure times.

  7. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Hemawan, Kadek W.; Gou, Huiyang; Hemley, Russell J.

    2015-11-01

    Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH4/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H2 into the deposition gas chemistry. Electronically excited species of CN, C2, Ar, N2, CH, Hβ, and Hα were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T2g phonon at 1333 cm-1 peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit "coral" and "cauliflower-like" morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

  8. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    DOE PAGES

    Gou, Huiyang; Hemley, Russell J.; Hemawan, Kadek W.

    2015-11-02

    Polycrystalline diamond has been successfully synthesized on silicon substrates at atmospheric pressure using a microwave capillary plasma chemical vapor deposition technique. The CH4/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H2 into the deposition gas chemistry. Electronically excited species of CN, C2, Ar, N2, CH, Hβ and Hα were observed in emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T2g phonon at 1333 cm-1 peak relative to the Raman features of graphitic carbon. Furthermore, field emission scanning electron microscopy (SEM) images revealmore » that, depending on the on growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.« less

  9. Surface and corrosion characteristics of carbon plasma implanted and deposited nickel-titanium alloy

    SciTech Connect

    Poon, R.W.Y.; Liu, X.Y.; Chung, C.Y.; Chu, P.K.; Yeung, K.W.K.; Lu, W.W.; Cheung, K.M.C.

    2005-05-01

    Nickel-titanium shape memory alloys (NiTi) are potentially useful in orthopedic implants on account of their super-elastic and shape memory properties. However, the materials are prone to surface corrosion and the most common problem is out-diffusion of harmful Ni ions from the substrate into body tissues and fluids. In order to improve the corrosion resistance and related surface properties, we used the technique of plasma immersion ion implantation and deposition to deposit an amorphous hydrogenated carbon coating onto NiTi and implant carbon into NiTi. Both the deposited amorphous carbon film and carbon plasma implanted samples exhibit much improved corrosion resistances and surface mechanical properties and possible mechanisms are suggested.

  10. Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

    NASA Astrophysics Data System (ADS)

    Lupina, G.; Strobel, C.; Dabrowski, J.; Lippert, G.; Kitzmann, J.; Krause, H. M.; Wenger, Ch.; Lukosius, M.; Wolff, A.; Albert, M.; Bartha, J. W.

    2016-05-01

    Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide conformal coating of graphene with Si layers as thin as 20 nm without any additional seed layer. The RF plasma process results in amorphization of the graphene layer. In contrast, the VHF process keeps the high crystalline quality of the graphene layer almost intact. Correlation analysis of Raman 2D and G band positions indicates that Si deposition induces reduction of the initial doping in graphene and an increase of compressive strain. Upon rapid thermal annealing, the amorphous Si layer undergoes dehydrogenation and transformation into a polycrystalline film, whereby a high crystalline quality of graphene is preserved.

  11. Plasma Spray-PVD: A New Thermal Spray Process to Deposit Out of the Vapor Phase

    NASA Astrophysics Data System (ADS)

    von Niessen, Konstantin; Gindrat, Malko

    2011-06-01

    Plasma spray-physical vapor deposition (PS-PVD) is a low pressure plasma spray technology recently developed by Sulzer Metco AG (Switzerland). Even though it is a thermal spray process, it can deposit coatings out of the vapor phase. The basis of PS-PVD is the low pressure plasma spraying (LPPS) technology that has been well established in industry for several years. In comparison to conventional vacuum plasma spraying (VPS) or low pressure plasma spraying (LPPS), the new proposed process uses a high energy plasma gun operated at a reduced work pressure of 0.1 kPa (1 mbar). Owing to the high energy plasma and further reduced work pressure, PS-PVD is able to deposit a coating not only by melting the feed stock material which builds up a layer from liquid splats but also by vaporizing the injected material. Therefore, the PS-PVD process fills the gap between the conventional physical vapor deposition (PVD) technologies and standard thermal spray processes. The possibility to vaporize feedstock material and to produce layers out of the vapor phase results in new and unique coating microstructures. The properties of such coatings are superior to those of thermal spray and electron beam-physical vapor deposition (EB-PVD) coatings. In contrast to EB-PVD, PS-PVD incorporates the vaporized coating material into a supersonic plasma plume. Owing to the forced gas stream of the plasma jet, complex shaped parts such as multi-airfoil turbine vanes can be coated with columnar thermal barrier coatings using PS-PVD. Even shadowed areas and areas which are not in the line of sight of the coating source can be coated homogeneously. This article reports on the progress made by Sulzer Metco in developing a thermal spray process to produce coatings out of the vapor phase. Columnar thermal barrier coatings made of Yttria-stabilized Zircona (YSZ) are optimized to serve in a turbine engine. This process includes not only preferable coating properties such as strain tolerance and erosion

  12. Study on electrostatic and electromagnetic probes operated in ceramic and metallic depositing plasmas

    NASA Astrophysics Data System (ADS)

    Styrnoll, T.; Bienholz, S.; Lapke, M.; Awakowicz, P.

    2014-04-01

    This paper discusses plasma probe diagnostics, namely the multipole resonance probe (MRP) and Langmuir probe (LP), operated in depositing plasmas. The aim of this work is to show that the combination of both probes provides stable and robust measurements and clear determination of plasma parameters for metallic and ceramic coating processes. The probes use different approaches to determine plasma parameters, e.g. electron density ne and electron temperature Te. The LP is a well-established plasma diagnostic, and its applicability in technological plasmas is well documented. The LP is a dc probe that performs a voltage sweep and analyses the measured current, which makes it insensitive against conductive metallic coating. However, once the LP is dielectrically coated with a ceramic film, its functionality is constricted. In contrast, the MRP was recently presented as a monitoring tool, which is insensitive to coating with dielectric ceramics. It is a new plasma diagnostic based on the concept of active plasma resonance spectroscopy, which uses the universal characteristic of all plasmas to resonate on or near the electron plasma frequency. The MRP emits a frequency sweep and the absorption of the signal, the |S11| parameter, is analysed. Since the MRP concept is based on electromagnetic waves, which are able to transmit dielectrics, it is insensitive to dielectric coatings. But once the MRP is metallized with a thin conductive film, no undisturbed RF-signal can be emitted into the plasma, which leads to falsified plasma parameter. In order to compare both systems, during metallic or dielectric coating, the probes are operated in a magnetron CCP, which is equipped with a titanium target. We present measurements in metallic and dielectric coating processes with both probes and elaborate advantages and problems of each probe operated in each coating environment.

  13. Surface modification of biomaterials by pulsed laser ablation deposition and plasma/gamma polymerization

    NASA Astrophysics Data System (ADS)

    Rau, Kaustubh R.

    Surface modification of stainless-steel was carried out by two different methods: pulsed laser ablation deposition (PLAD) and a combined plasma/gamma process. A potential application was the surface modification of endovascular stents, to enhance biocompatibility. The pulsed laser ablation deposition process, had not been previously reported for modifying stents and represented a unique and potentially important method for surface modification of biomaterials. Polydimethylsiloxane (PDMS) elatomer was studied using the PLAD technique. Cross- linked PDMS was deemed important because of its general use for biomedical implants and devices as well as in other fields. Furthermore, PDMS deposition using PLAD had not been previously studied and any information gained on its ablation characteristics could be important scientifically and technologically. The studies reported here showed that the deposited silicone film properties had a dependence on the laser energy density incident on the target. Smooth, hydrophobic, silicone-like films were deposited at low energy densities (100-150 mJ/cm2). At high energy densities (>200 mJ/cm2), the films had an higher oxygen content than PDMS, were hydrophilic and tended to show a more particulate morphology. It was also determined that (1)the deposited films were stable and extremely adherent to the substrate, (2)silicone deposition exhibited an `incubation effect' which led to the film properties changing with laser pulse number and (3)films deposited under high vacuum were similar to films deposited at low vacuum levels. The mechanical properties of the PLAD films were determined by nanomechanical measurements which are based on the Atomic Force Microscope (AFM). From these measurements, it was possible to determine the modulus of the films and also study their scratch resistance. Such measurement techniques represent a significant advance over current state-of-the-art thin film characterization methods. An empirical model for

  14. Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon

    PubMed Central

    Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca i

    2017-01-01

    Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C. PMID:28262840

  15. Deposition of PTFE thin films by RF plasma sputtering on <1 0 0> silicon substrates

    NASA Astrophysics Data System (ADS)

    Bodas, Dhananjay S.; Mandale, A. B.; Gangal, S. A.

    2005-05-01

    Polymers have been studied extensively due to the wonderful array of properties presented by them. Polymer materials can be coated/deposited by various techniques like sputtering (magnetron, ion beam, RF or dc), plasma polymerization, etc. and can be used in coatings, paint industries, etc. The present study deals with the RF sputter deposition of poly(tetrafluoro ethylene) (PTFE), commonly known as Teflon. Depositions were carried out on mirror polished silicon <1 0 0> substrates at different powers in the range of 100-200 W. The deposition time was kept constant at 60 min. The sputtered film shows lower contact angle of 50° with water and 44° with diiodomethane, a lower interfacial tension value of 0.76 dyne/cm, indicating hydrophilicity and good adhesion of the film with the substrate. FTIR indicates presence of C sbnd F, C sbnd F 2 bonding groups in the deposited film. Further, XPS study shows presence of CF 3 (292.2 eV), CF 2 (290.8 eV), C-F (288.0 eV) and C sbnd CF (286.4 eV) moieties indicating deposition of PTFE films at higher power levels of plasma.

  16. Energy deposition characteristics of nanosecond dielectric barrier discharge plasma actuators: Influence of dielectric material

    NASA Astrophysics Data System (ADS)

    Correale, G.; Winkel, R.; Kotsonis, M.

    2015-08-01

    An experimental study aimed at the characterization of energy deposition of nanosecond Dielectric Barrier Discharge (ns-DBD) plasma actuators was carried out. Special attention was given on the effect of the thickness and material used for dielectric barrier. The selected materials for this study were polyimide film (Kapton), polyamide based nylon (PA2200), and silicone rubber. Schlieren measurements were carried out in quiescent air conditions in order to observe density gradients induced by energy deposited. Size of heated area was used to qualify the energy deposition coupled with electrical power measurements performed using the back-current shunt technique. Additionally, light intensity measurements showed a different nature of discharge based upon the material used for barrier, for a fixed thickness and frequency of discharge. Finally, a characterisation study was performed for the three tested materials. Dielectric constant, volume resistivity, and thermal conductivity were measured. Strong trends between the control parameters and the energy deposited into the fluid during the discharge were observed. Results indicate that efficiency of energy deposition mechanism relative to the thickness of the barrier strongly depends upon the material used for the dielectric barrier itself. In general, a high dielectric strength and a low volumetric resistivity are preferred for a barrier, together with a high heat capacitance and a low thermal conductivity coefficient in order to maximize the efficiency of the thermal energy deposition induced by an ns-DBD plasma actuator.

  17. Conformal encapsulation of three-dimensional, bioresorbable polymeric scaffolds using plasma-enhanced chemical vapor deposition.

    PubMed

    Hawker, Morgan J; Pegalajar-Jurado, Adoracion; Fisher, Ellen R

    2014-10-21

    Bioresorbable polymers such as poly(ε-caprolactone) (PCL) have a multitude of potential biomaterial applications such as controlled-release drug delivery and regenerative tissue engineering. For such biological applications, the fabrication of porous three-dimensional bioresorbable materials with tunable surface chemistry is critical to maximize their surface-to-volume ratio, mimic the extracellular matrix, and increase drug-loading capacity. Here, two different fluorocarbon (FC) precursors (octofluoropropane (C3F8) and hexafluoropropylene oxide (HFPO)) were used to deposit FC films on PCL scaffolds using plasma-enhanced chemical vapor deposition (PECVD). These two coating systems were chosen with the intent of modifying the scaffold surfaces to be bio-nonreactive while maintaining desirable bulk properties of the scaffold. X-ray photoelectron spectroscopy showed high-CF2 content films were deposited on both the exterior and interior of PCL scaffolds and that deposition behavior is PECVD system specific. Scanning electron microscopy data confirmed that FC film deposition yielded conformal rather than blanket coatings as the porous scaffold structure was maintained after plasma treatment. Treated scaffolds seeded with human dermal fibroblasts (HDF) demonstrate that the cells do not attach after 72 h and that the scaffolds are noncytotoxic to HDF. This work demonstrates conformal FC coatings can be deposited on 3D polymeric scaffolds using PECVD to fabricate 3D bio-nonreactive materials.

  18. Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon

    NASA Astrophysics Data System (ADS)

    Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca I.

    2017-03-01

    Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C.

  19. Patterned growth of carbon nanotubes obtained by high density plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Mousinho, A. P.; Mansano, R. D.

    2015-03-01

    Patterned growth of carbon nanotubes by chemical vapor deposition represents an assembly approach to place and orient nanotubes at a stage as early as when they are synthesized. In this work, the carbon nanotubes were obtained at room temperature by High Density Plasmas Chemical Vapor Deposition (HDPCVD) system. This CVD system uses a new concept of plasma generation, where a planar coil coupled to an RF system for plasma generation was used with an electrostatic shield for plasma densification. In this mode, high density plasmas are obtained. We also report the patterned growth of carbon nanotubes on full 4-in Si wafers, using pure methane plasmas and iron as precursor material (seed). Photolithography processes were used to pattern the regions on the silicon wafers. The carbon nanotubes were characterized by micro-Raman spectroscopy, the spectra showed very single-walled carbon nanotubes axial vibration modes around 1590 cm-1 and radial breathing modes (RBM) around 120-400 cm-1, confirming that high quality of the carbon nanotubes obtained in this work. The carbon nanotubes were analyzed by atomic force microscopy and scanning electron microscopy too. The results showed that is possible obtain high-aligned carbon nanotubes with patterned growth on a silicon wafer with high reproducibility and control.

  20. Growth of diamond by RF plasma-assisted chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Meyer, Duane E.; Ianno, Natale J.; Woollam, John A.; Swartzlander, A. B.; Nelson, A. J.

    1988-01-01

    A system has been designed and constructed to produce diamond particles by inductively coupled radio-frequency, plasma-assisted chemical vapor deposition. This is a low-pressure, low-temperature process used in an attempt to deposit diamond on substrates of glass, quartz, silicon, nickel, and boron nitride. Several deposition parameters have been varied including substrate temperature, gas concentration, gas pressure, total gas flow rate, RF input power, and deposition time. Analytical methods employed to determine composition and structure of the deposits include scanning electron microscopy, absorption spectroscopy, scanning Auger microprobe spectroscopy, and Raman spectroscopy. Analysis indicates that particles having a thin graphite surface, as well as diamond particles with no surface coatings, have been deposited. Deposits on quartz have exhibited optical bandgaps as high as 4.5 eV. Scanning electron microscopy analysis shows that particles are deposited on a pedestal which Auger spectroscopy indicates to be graphite. This is a phenomenon that has not been previously reported in the literature.

  1. Deposition of plasma polymerized perfluoromethylene-dominated films showing oil-repellency

    NASA Astrophysics Data System (ADS)

    Chase, J. E.; Boerio, F. J.

    2003-05-01

    Plasma polymerized fluorocarbon films were deposited onto polyethylene (PE) substrates to increase oil-repellency of PE. Depositions were performed using the monomer, 1H,1H,2H-perfluoro-1-dodecene in a parallel-plate, radio frequency (rf) reactor, with variable continuous-wave power ranging from 2 to 160 W. The film deposition rate and morphology were strongly dependent on the applied rf power. Most importantly, the chemical structure of the deposited films was also altered, resulting in changes in contact angles of various liquids and the surface energy. Films deposited at low power were composed mainly of perfluoromethylene (CF2) species (up to 67.2%), as shown by x-ray photoelectron spectroscopy (XPS). With an increase in rf power, CF2 content in the film decreased as further fragmentation of the monomer occurred. For each deposition at varying rf powers, even at powers as low as 2 W, the C=C and C-H bonds in the monomer were dissociated by the plasma and not incorporated into the films, as shown by Fourier transform infrared spectroscopy. Oil-repellency, as shown by increased contact angles of hydrocarbon liquids, was found to increase as the amount of CF2 species increased in the film structure. A low critical surface energy (2.7 mJ/m2) was calculated for the film deposited with only 2 W of rf power. Adhesion of the plasma-polymerized films to the PE was also evaluated and found to be poor for films with a high concentration of CF2 species, where cohesive failure within the film occurred. However, adhesion increased as a function of rf power, where the film structure showed more cross-linking. There was a compromise between producing a film with high oleophobicity (oil-repellency) while maintaining adhesion of the film to PE, as some disruption of the CF2 chains in the films was necessary for cohesion through cross-linking.

  2. The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2–N2 capacitive discharges

    NASA Astrophysics Data System (ADS)

    Napari, M.; Tarvainen, O.; Kinnunen, S.; Arstila, K.; Julin, J.; Fjellvåg, Ø. S.; Weibye, K.; Nilsen, O.; Sajavaara, T.

    2017-03-01

    Two distinguishable plasma modes in the O2–N2 radio frequency capacitively coupled plasma (CCP) used in remote plasma-enhanced atomic layer deposition (PEALD) were observed. Optical emission spectroscopy and spectra interpretation with rate coefficient analysis of the relevant processes were used to connect the detected modes to the α and γ modes of the CCP discharge. To investigate the effect of the plasma modes on the PEALD film growth, ZnO and TiO2 films were deposited using both modes and compared to the films deposited using direct plasma. The growth rate, thickness uniformity, elemental composition, and crystallinity of the films were found to correlate with the deposition mode. In remote CCP operations the transition to the γ mode can result in a parasitic discharge leading to uncontrollable film growth and thus limit the operation parameters of the capacitive discharge in the PEALD applications.

  3. Solid oxide fuel cell processing using plasma arc spray deposition techniques. Final report

    SciTech Connect

    Ray, E.R.; Spengler, C.J.; Herman, H.

    1991-07-01

    The Westinghouse Electric Corporation, in conjunction with the Thermal Spray Laboratory of the State University of New York, Stony Brook, investigated the fabrication of a gas-tight interconnect layer on a tubular solid oxide fuel cell with plasma arc spray deposition. The principal objective was to determine the process variables for the plasma spray deposition of an interconnect with adequate electrical conductivity and other desired properties. Plasma arc spray deposition is a process where the coating material in powder form is heated to or above its melting temperature, while being accelerated by a carrier gas stream through a high power electric arc. The molten powder particles are directed at the substrate, and on impact, form a coating consisting of many layers of overlapping, thin, lenticular particles or splats. The variables investigated were gun power, spray distance, powder feed rate, plasma gas flow rates, number of gun passes, powder size distribution, injection angle of powder into the plasma plume, vacuum or atmospheric plasma spraying, and substrate heating. Typically, coatings produced by both systems showed bands of lanthanum rich material and cracking with the coating. Preheating the substrate reduced but did not eliminate internal coating cracking. A uniformly thick, dense, adherent interconnect of the desired chemistry was finally achieved with sufficient gas- tightness to allow fabrication of cells and samples for measurement of physical and electrical properties. A cell was tested successfully at 1000{degree}C for over 1,000 hours demonstrating the mechanical, electrical, and chemical stability of a plasma-arc sprayed interconnect layer.

  4. Solid oxide fuel cell processing using plasma arc spray deposition techniques

    SciTech Connect

    Ray, E.R.; Spengler, C.J.; Herman, H.

    1991-07-01

    The Westinghouse Electric Corporation, in conjunction with the Thermal Spray Laboratory of the State University of New York, Stony Brook, investigated the fabrication of a gas-tight interconnect layer on a tubular solid oxide fuel cell with plasma arc spray deposition. The principal objective was to determine the process variables for the plasma spray deposition of an interconnect with adequate electrical conductivity and other desired properties. Plasma arc spray deposition is a process where the coating material in powder form is heated to or above its melting temperature, while being accelerated by a carrier gas stream through a high power electric arc. The molten powder particles are directed at the substrate, and on impact, form a coating consisting of many layers of overlapping, thin, lenticular particles or splats. The variables investigated were gun power, spray distance, powder feed rate, plasma gas flow rates, number of gun passes, powder size distribution, injection angle of powder into the plasma plume, vacuum or atmospheric plasma spraying, and substrate heating. Typically, coatings produced by both systems showed bands of lanthanum rich material and cracking with the coating. Preheating the substrate reduced but did not eliminate internal coating cracking. A uniformly thick, dense, adherent interconnect of the desired chemistry was finally achieved with sufficient gas- tightness to allow fabrication of cells and samples for measurement of physical and electrical properties. A cell was tested successfully at 1000{degree}C for over 1,000 hours demonstrating the mechanical, electrical, and chemical stability of a plasma-arc sprayed interconnect layer.

  5. The influence of energy deposition parameters on laser plasma drag reduction

    NASA Astrophysics Data System (ADS)

    Dou, Zhiguo; Liu, Zhun; Yao, Honglin; Li, Xiuqian

    2013-09-01

    Laser plasma drag reduction is a new method to reduce the wave drag of hypersonic flight. The research of the laser plasma drag reduction performance is an important work. The purpose of this paper is investigating laser plasma drag reduction by numerical simulation to enhance the understanding of the drag reduction mechanism, get the drag reduction performance in different conditions, and provide references for laser plasma drag reduction experiment in the future. Based on summarizing correlative references systematically, through building the model of energy deposition and comparison the simulated results to the empirical formula and computation results to verify the program correctness, the influence of laser energy parameters to laser plasma drag reduction were simulated numerically for optimize the performance. The follow conclusions were got by numerical simulation: The computation program can well simulate the interacting of LSDW(laser supported detonation wave) to the bow shock in front of the blunt body. Results indicate that the blunt body drag could be decreased by injecting laser energy into the incoming hypersonic flow. The correctness of program was verified by compare result to the experiment and computation results. Blunt body drag will be greatly decreased with injected laser power increased, The bigger laser power is injected, the more drag decreases. There's an energy saturation value for each laser power level, the injecting laser power effectiveness values are never quite high for all laser power level. There is an optimized energy deposition location in upstream flow, this location is right ahead of the blunt body. When the distance from deposition location to the surface of blunt body is 5 times the blunt radius, blunt body drag decreased the most. This paper investigated the parameters which primary influence the performance of drag reduction. The numerical simulation data and obtained results are meaningful for laser plasma drag reduction

  6. Plasma membranes modified by plasma treatment or deposition as solid electrolytes for potential application in solid alkaline fuel cells.

    PubMed

    Reinholdt, Marc; Ilie, Alina; Roualdès, Stéphanie; Frugier, Jérémy; Schieda, Mauricio; Coutanceau, Christophe; Martemianov, Serguei; Flaud, Valérie; Beche, Eric; Durand, Jean

    2012-07-30

    In the highly competitive market of fuel cells, solid alkaline fuel cells using liquid fuel (such as cheap, non-toxic and non-valorized glycerol) and not requiring noble metal as catalyst seem quite promising. One of the main hurdles for emergence of such a technology is the development of a hydroxide-conducting membrane characterized by both high conductivity and low fuel permeability. Plasma treatments can enable to positively tune the main fuel cell membrane requirements. In this work, commercial ADP-Morgane® fluorinated polymer membranes and a new brand of cross-linked poly(aryl-ether) polymer membranes, named AMELI-32®, both containing quaternary ammonium functionalities, have been modified by argon plasma treatment or triallylamine-based plasma deposit. Under the concomitant etching/cross-linking/oxidation effects inherent to the plasma modification, transport properties (ionic exchange capacity, water uptake, ionic conductivity and fuel retention) of membranes have been improved. Consequently, using plasma modified ADP-Morgane® membrane as electrolyte in a solid alkaline fuel cell operating with glycerol as fuel has allowed increasing the maximum power density by a factor 3 when compared to the untreated membrane.

  7. Plasma Membranes Modified by Plasma Treatment or Deposition as Solid Electrolytes for Potential Application in Solid Alkaline Fuel Cells

    PubMed Central

    Reinholdt, Marc; Ilie, Alina; Roualdès, Stéphanie; Frugier, Jérémy; Schieda, Mauricio; Coutanceau, Christophe; Martemianov, Serguei; Flaud, Valérie; Beche, Eric; Durand, Jean

    2012-01-01

    In the highly competitive market of fuel cells, solid alkaline fuel cells using liquid fuel (such as cheap, non-toxic and non-valorized glycerol) and not requiring noble metal as catalyst seem quite promising. One of the main hurdles for emergence of such a technology is the development of a hydroxide-conducting membrane characterized by both high conductivity and low fuel permeability. Plasma treatments can enable to positively tune the main fuel cell membrane requirements. In this work, commercial ADP-Morgane® fluorinated polymer membranes and a new brand of cross-linked poly(aryl-ether) polymer membranes, named AMELI-32®, both containing quaternary ammonium functionalities, have been modified by argon plasma treatment or triallylamine-based plasma deposit. Under the concomitant etching/cross-linking/oxidation effects inherent to the plasma modification, transport properties (ionic exchange capacity, water uptake, ionic conductivity and fuel retention) of membranes have been improved. Consequently, using plasma modified ADP-Morgane® membrane as electrolyte in a solid alkaline fuel cell operating with glycerol as fuel has allowed increasing the maximum power density by a factor 3 when compared to the untreated membrane. PMID:24958295

  8. Drop coating deposition Raman spectroscopy of blood plasma for the detection of colorectal cancer

    NASA Astrophysics Data System (ADS)

    Li, Pengpeng; Chen, Changshui; Deng, Xiaoyuan; Mao, Hua; Jin, Shaoqin

    2015-03-01

    We have recently applied the technique of drop coating deposition Raman (DCDR) spectroscopy for colorectal cancer (CRC) detection using blood plasma. The aim of this study was to develop a more convenient and stable method based on blood plasma for noninvasive CRC detection. Significant differences are observed in DCDR spectra between healthy (n=105) and cancer (n=75) plasma from 15 CRC patients and 21 volunteers, particularly in the spectra that are related to proteins, nucleic acids, and β-carotene. The multivariate analysis principal components analysis and the linear discriminate analysis, together with leave-one-out, cross validation were used on DCDR spectra and yielded a sensitivity of 100% (75/75) and specificity of 98.1% (103/105) for detection of CRC. This study demonstrates that DCDR spectroscopy of blood plasma associated with multivariate statistical algorithms has the potential for the noninvasive detection of CRC.

  9. INSTRUMENTS AND METHODS OF INVESTIGATION: Modification of material properties and coating deposition using plasma jets

    NASA Astrophysics Data System (ADS)

    Pogrebnyak, Alexander D.; Tyurin, Yu N.

    2005-05-01

    The review is concerned with the current status of research on the use of plasma jets for the modification of surface properties of metalware, as well as of investigations of doping and mass transfer of elements. The effect of thermal plasma parameters on the efficiency of surface processing of metal materials is discussed. The structure and properties of protective coatings produced by exposure to pulsed plasmas are analyzed. A new direction for the production of combined coatings is considered. Their structure and properties were studied by the example of Fe, Cu, steels, and alloys, including titanium alloys; the modification process was shown to be controllable by the action of pulsed plasma jets. The physical factors that affect the modification process and the coating deposition, and their effect on the structure and properties of metallic, ceramic - metal, and ceramic coatings were analyzed.

  10. Drop coating deposition Raman spectroscopy of blood plasma for the detection of colorectal cancer.

    PubMed

    Li, Pengpeng; Chen, Changshui; Deng, Xiaoyuan; Mao, Hua; Jin, Shaoqin

    2015-03-01

    We have recently applied the technique of drop coating deposition Raman (DCDR) spectroscopy for colorectal cancer (CRC) detection using blood plasma. The aim of this study was to develop a more convenient and stable method based on blood plasma for noninvasive CRC detection. Significant differences are observed in DCDR spectra between healthy (n = 105) and cancer (n = 75) plasma from 15 CRC patients and 21 volunteers, particularly in the spectra that are related to proteins, nucleic acids, and β-carotene. The multivariate analysis principal components analysis and the linear discriminate analysis, together with leave-one-out, cross validation were used on DCDR spectra and yielded a sensitivity of 100% (75/75) and specificity of 98.1% (103/105) for detection of CRC. This study demonstrates that DCDR spectroscopy of blood plasma associated with multivariate statistical algorithms has the potential for the noninvasive detection of CRC.

  11. Effect of process parameters on properties of argon–nitrogen plasma for titanium nitride film deposition

    SciTech Connect

    Saikia, Partha; Kakati, Bharat

    2013-11-15

    In this study, the effect of working pressure and input power on the physical properties and sputtering efficiencies of argon–nitrogen (Ar/N{sub 2}) plasma in direct current magnetron discharge is investigated. The discharge in Ar/N{sub 2} is used to deposit TiN films on high speed steel substrate. The physical plasma parameters are determined by using Langmuir probe and optical emission spectroscopy. On the basis of the different reactions in the gas phase, the variation of plasma parameters and sputtering rate are explained. A prominent change of electron temperature, electron density, ion density, and degree of ionization of Ar is found as a function of working pressure and input power. The results also show that increasing working pressure exerts a negative effect on film deposition rate while increasing input power has a positive impact on the same. To confirm the observed physical properties and evaluate the texture growth as a function of deposition parameters, x-ray diffraction study of deposited TiN films is also done.

  12. Measuring atomic oxygen densities and electron properties in an Inductively Coupled Plasma for thin film deposition

    NASA Astrophysics Data System (ADS)

    Meehan, David; Gibson, Andrew; Booth, Jean-Paul; Wagenaars, Erik

    2016-09-01

    Plasma Enhanced Pulsed Laser Deposition (PE-PLD) is an advanced way of depositing thin films of oxide materials by using a laser to ablate a target, and passing the resulting plasma plume through a background Inductively-Coupled Plasma (ICP), instead of a background gas as is done in traditional PLD. The main advantage of PE-PLD is the control of film stoichiometry via the direct control of the reactive oxygen species in the ICP instead of relying on a neutral gas background. The aim is to deposit zinc oxide films from a zinc metal target and an oxygen ICP. In this work, we characterise the range of compositions of the reactive oxygen species achievable in ICPs; in particular the atomic oxygen density. The density of atomic oxygen has been determined within two ICPs of two different geometries over a range of plasma powers and pressures with the use of Energy Resolved Actinometry (ERA). ERA is a robust diagnostic technique with determines both the dissociation degree and average electron energy by comparing the excitation ratios of two oxygen and one argon transition. Alongside this the electron densities have been determined with the use of a hairpin probe. This work received financial support from the EPSRC, and York-Paris CIRC.

  13. Deposition of Fluorinated Diamond-Like-Carbon Films by Exposure of Electrothermal Pulsed Plasmas

    NASA Astrophysics Data System (ADS)

    Kimura, Takashi; Iida, Masayasu

    2011-08-01

    Thin amorphous carbon films are deposited on silicon substrates by exposure to pulsed plasmas where the feed gas is mainly generated from the ablation of an insulator. An electrothermal pulsed plasma thruster with a discharge room in an insulator rod is used as the pulsed plasma for the ablation of the insulator, and the material of the insulator rod is poly(tetrafluoroethylene) (PTFE). The pulsed plasma, in which the estimated electron density is on the order of 1022-1023 m-3, is generated by the stored energy in the capacitor. The deposition rate, which depends on the stored energy, is lower than 1 nm per pulse in our experiment. The maximum hardness measured using a nanoindenter is about 7 GPa at a stored energy of about 2.7 J, beyond which the hardness of the films decreases with the increase in stored energy. Raman spectroscopy is also carried out to examine the formation of fluorinated diamond-like carbon films. In addition, the influence of dilution gas on the properties of the deposited films is also investigated.

  14. Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Oliveira, M. H.; Viana, G. A.; de Lima, M. M.; Cros, A.; Cantarero, A.; Marques, F. C.

    2010-12-01

    Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH4) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

  15. Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

    SciTech Connect

    Oliveira, M. H. Jr.; Viana, G. A.; Marques, F. C.; Lima, M. M. Jr. de; Cros, A.; Cantarero, A.

    2010-12-15

    Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH{sub 4}) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

  16. Surface field of forces and protein adsorption behavior of poly(hydroxyethylmethacrylate) films deposited from plasma.

    PubMed

    Morra, M; Cassinelli, C

    1995-01-01

    Polymeric films were deposited from hydroxyethylmethacrylate (HEMA) plasma on non-woven poly(butyleneterephtalate) (PBT) filter materials. To test the effect of deposition conditions on surface properties, film were deposited using a constant monomer flow rate and a discharge power ranging from 40-100 W. Surface composition and surface energetics were evaluated by Electron Spectroscopy for Chemical Analysis (ESCA) and contact angle measurement, respectively. Albumin (Alb) and fibrinogen (Fg) adsorption from single protein solutions to the plasma-coated filters was measured. Results illustrate the marked effects of the deposition condition on the surface composition, the surface field of forces, and the protein adsorption behavior. The latter is modeled by the application of the Good-van Oss-Chaudhury theory of Lewis acid-base contribution to interfacial energetics. Materials endowed with widely different properties are obtained from the same monomer and different deposition conditions, a result that must be taken into account both in the production step, to assure constant quality, and in the development of specifically tailored materials.

  17. Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques

    NASA Astrophysics Data System (ADS)

    Perrotta, Alberto; Fuentes-Hernandez, Canek; Khan, Talha M.; Kippelen, Bernard; Creatore, Mariadriana; Graham, Samuel

    2017-01-01

    Plasma-assisted atomic layer deposition (ALD) is used for the deposition of environmental barriers directly onto organic photovoltaic devices (OPVs) at near room temperature (30 °C). To study the effect of the ALD process on the organic materials forming the device, the precursor diffusion and intermixing at the interface during the growth of different plasma-assisted ALD inorganic barriers (i.e. Al2O3 and TiO2) onto the organic photoactive layer (P3HT:ICBA) was investigated. Depth profile x-ray photoelectron spectroscopy was used to analyze the composition of the organic/inorganic interface to investigate the infiltration of the plasma-assisted ALD precursors into the photoactive layer as a function of the precursor dimension, the process temperature, and organic layer morphology. The free volume in the photoactive layer accessible to the ALD precursor was characterized by means of ellipsometric porosimetry (EP) and spectroscopic ellipsometry as a function of temperature. The organic layer is shown to exhibit free volume broadening at high temperatures, increasing the infiltration depth of the ALD precursor into the photoactive layer. Furthermore, based on previous investigations, the intrinsic permeation properties of the inorganic layers deposited by plasma-assisted ALD were predicted from the nano-porosity content as measured by EP and found to be in the 10-6 gm-2 d-1 range. Insight from our studies was used to design and fabricate multilayer barriers synthesized at near-room temperature by plasma-assisted ALD in combination with plasma-enhanced CVD onto organic photovoltaic (OPVs) devices. Encapsulated OPVs displayed shelf-lifetimes up to 1400 h at ambient conditions.

  18. Plasma-enhanced chemical vapor deposition of β-tungsten, a metastable phase

    NASA Astrophysics Data System (ADS)

    Tang, C. C.; Hess, D. W.

    1984-09-01

    Plasma-enhanced chemical vapor deposition of a metastable phase of tungsten ( β-W) is performed using tungsten hexafluoride and hydrogen as source gases. At 350 °C, the as-deposited resistivity of these films is ˜50 μΩ cm. After heat treatments between 650 and 750 °C in forming gas, the resistivity drops below 11 μΩ cm. Concomitant with this resistivity change is a phase change to α-W, the equilibrium, body-centered-cubic form.

  19. Growth mechanism of carbon nanotubes grown by microwave plasma-assisted chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Muneyoshi, T.; Okai, M.; Yaguchi, T.; Sasaki, S.

    2001-10-01

    To investigate the most suitable deposition conditions and growth mechanism, we grew carbon nanotubes (CNTs) by microwave plasma-assisted chemical vapor deposition under various conditions. The experimental parameters we varied were (a) the mixture ratio of methane in hydrogen, (b) the total gas pressure, and (c) the bias electric current. We found that the bias electric current was the most influential parameter in determining the shape of CNTs. We believe that the growth process of CNTs can be explained by using the solid solubility curves of metal-carbon phase diagrams. Selective growth and low-temperature growth of CNTs can also be understood from these phase diagrams.

  20. Properties of Plasma Enhanced Chemical Vapor Deposition Barrier Coatings and Encapsulated Polymer Solar Cells

    NASA Astrophysics Data System (ADS)

    Qi, Lei; Zhang, Chunmei; Chen, Qiang

    2014-01-01

    In this paper, we report silicon oxide coatings deposited by plasma enhanced chemical vapor deposition technology (PECVD) on 125 μm polyethyleneterephthalate (PET) surfaces for the purpose of the shelf lifetime extension of sealed polymer solar cells. After optimization of the processing parameters, we achieved a water vapor transmission rate (WVTR) of ca. 10-3 g/m2/day with the oxygen transmission rate (OTR) less than 0.05 cc/m2/day, and succeeded in extending the shelf lifetime to about 400 h in encapsulated solar cells. And then the chemical structure of coatings related to the properties of encapsulated cell was investigated in detail.

  1. Evolution of the calcium hydroxyapatite crystal structure under plasma deposition and subsequent reducing treatment

    NASA Astrophysics Data System (ADS)

    Shamrai, V. F.; Karpikhin, A. E.; Sirotinkin, V. P.; Kalita, V. I.; Komlev, D. I.

    2014-03-01

    The structure of hydroxyapatite plasma coatings on a titanium substrate has been investigated by the X-ray Rietveld method. The hydroxyapatite crystal structure in plasma-deposited samples is characterized by strong distortions of its main element (tetrahedral PO4 cluster) and coordination calcium polyhedra, as well as calcium deficit in the Ca2 site; however, these features do not change the main motif of the hydroxyapatite structure. The bond distortions in PO4 clusters are estimated by the Bauer method. It is shown that hydrothermal treatment leads to the almost complete recovery of the hydroxyapatite structure.

  2. Deposition of Lanthanum Strontium Cobalt Ferrite (LSCF) Using Suspension Plasma Spraying for Oxygen Transport Membrane Applications

    NASA Astrophysics Data System (ADS)

    Fan, E. S. C.; Kesler, O.

    2015-08-01

    Suspension plasma spray deposition was utilized to fabricate dense lanthanum strontium cobalt ferrite oxygen separation membranes (OSMs) on porous metal substrates for mechanical support. The as-sprayed membranes had negligible and/or reversible material decomposition. At the longer stand-off distance (80 mm), smooth and dense membranes could be manufactured using a plasma with power below approximately 81 kW. Moreover, a membrane of 55 μm was observed to have very low gas leakage rates desirable for OSM applications. This thickness could potentially be decreased further to improve oxygen diffusion by using metal substrates with finer surface pores.

  3. Atmospheric inductively coupled Ar/H2 plasmas jet for low-temperature deposition of Cu Thin Film on Polyimide

    NASA Astrophysics Data System (ADS)

    Zhao, Peng; Zheng, Wei; Meng, Yuedong; Nagatsu, Masaaki

    2013-09-01

    For fabrication of future flexible electronic devices and depositing Cu thin films on polyimide substrate at low temperature, an atmospheric inductively coupled plasma jet driven by a 13.56 MHz radio frequency (RF) power is developed. In previous studies, we found that by adding a fractional amount of H2 gas into Ar plasma, quality of Cu film was significantly improved. But under air atmosphere, the oxidization of deposited film is inevitable. So we developed the technology in nitrogen atmosphere. We invested the plasma jet properties of Ar plasma in air, Ar/ H2 plasma in air and Ar/ H2 plasma in nitrogen atmosphere, to discuss the effect of adding H2 to Ar plasma and nitrogen background on plasma properties. The plasma gas temperature diagnoses and chemical reaction research during deposition were performed by OES. The plasma jet non-equilibrium numeral simulations were also carried out for thermal and transport properties during deposition. The effects on Cu films quality were studied by means of XPS and SEM. All the plasma properties and the results of Cu film would give us an insight on the mechanism and the possibility of improving the process.

  4. Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition.

    PubMed

    Edy, Riyanto; Huang, Xiaojiang; Guo, Ying; Zhang, Jing; Shi, Jianjun

    2013-02-15

    In this paper, polyethyleneterephthalate (PET) films with and without plasma pretreatment were modified by atomic layer deposition (ALD) and plasma-assisted atomic layer deposition (PA-ALD). It demonstrates that the Al2O3 films are successfully deposited onto the surface of PET films. The cracks formed on the deposited Al2O3 films in the ALD, plasma pretreated ALD, and PA-ALD were attributed to the energetic ion bombardment in plasmas. The surface wettability in terms of water contact angle shows that the deposited Al2O3 layer can enhance the wetting property of modified PET surface. Further characterizations of the Al2O3 films suggest that the elevated density of hydroxyl -OH group improve the initial growth of ALD deposition. Chemical composition of the Al2O3-coated PET film was characterized by X-ray photoelectron spectroscopy, which shows that the content of C 1s reduces with the growing of O 1s in the Al2O3-coated PET films, and the introduction of plasma in the ALD process helps the normal growth of Al2O3 on PET in PA-ALD.

  5. Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

    SciTech Connect

    Amusan, Akinwumi A. Kalkofen, Bodo; Burte, Edmund P.; Gargouri, Hassan; Wandel, Klaus; Pinnow, Cay; Lisker, Marco

    2016-01-15

    Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt{sub 3}) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO{sub 2}, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detection limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10{sup −6} Ω cm was obtained for approximately 97 nm Ag film on SiO{sub 2}/Si substrate. The thickness was determined from the SEM cross section on the SiO{sub 2}/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO{sub 2} surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images.

  6. Nanofabrication using home-made RF plasma coupled chemical vapour deposition system

    NASA Astrophysics Data System (ADS)

    Ong, Si Ci; Ilyas, Usman; Rawat, Rajdeep Singh

    2014-08-01

    Zinc oxide, ZnO, a popular semiconductor material with a wide band gap (3.37 eV) and high binding energy of the exciton (60 meV), has numerous applications such as in optoelectronics, chemical/biological sensors, and drug delivery. This project aims to (i) optimize the operating conditions for growth of ZnO nanostructures using the chemical vapor deposition (CVD) method, and (ii) investigate the effects of coupling radiofrequency (RF) plasma to the CVD method on the quality of ZnO nanostructures. First, ZnO nanowires were synthesized using a home-made reaction setup on gold-coated and non-coated Si (100) substrates at 950 °C. XRD, SEM, EDX, and PL measurements were used for characterizations and it was found that a deposition duration of 10 minutes produced the most well-defined ZnO nanowires. SEM analysis revealed that the nanowires had diameters ranging from 30-100 mm and lengths ranging from 1-4 µm. In addition, PL analysis showed strong UV emission at 380 nm, making it suitable for UV lasing. Next, RF plasma was introduced for 30 minutes. Both remote and in situ RF plasma produced less satisfactory ZnO nanostructures with poorer crystalline structure, surface morphology, and optical properties due to etching effect of energetic ions produced from plasma. However, a reduction in plasma discharge duration to 10 minutes produced thicker and shorter ZnO nanostructures. Based on experimentation conducted, it is insufficient to conclude that RF plasma cannot aid in producing well-defined ZnO nanostructures. It can be deduced that the etching effect of energetic ions outweighed the increased oxygen radical production in RF plasma nanofabrication.

  7. Status of Plasma Physics Techniques for the Deposition of Tribological Coatings

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1984-01-01

    The plasma physics deposition techniques of sputtering and ion-plating are reviewed. Their characteristics and potentials are discussed in terms of synthesis or deposition of tribological coatings. Since the glow discharge or plasma generated in the conventional sputtering and ion-plating techniques has a low ionization efficiency, rapid advances have been made in equipment design to further increase the ionization efficiency. The enhanced ionization favorably affects the nucleation and growth sequence of the coating. This leads to improved adherence and coherence, higher density, favorable morphological growth, and reduced internal stresses in the coatings. As a result, desirable coating characteristics can be precision tailored. Tribological coating characteristics of sputtered solid film lubricants such as MoS2, ion-plated soft gold and lead metallic films, and sputtered and ion-plated wear-resistant refractory compound films such as nitrides and carbides are discussed.

  8. Fast electron energy deposition in a magnetized plasma: Kinetic theory and particle-in-cell simulation

    SciTech Connect

    Robiche, J.; Rax, J.-M.; Bonnaud, G.; Gremillet, L.

    2010-03-15

    The collisional dynamics of a relativistic electron jet in a magnetized plasma are investigated within the framework of kinetic theory. The relativistic Fokker-Planck equation describing slowing down, pitch angle scattering, and cyclotron rotation is derived and solved. Based on the solution of this Fokker-Planck equation, an analytical formula for the root mean square spot size transverse to the magnetic field is derived and this result predicts a reduction in radial transport. Some comparisons with particle-in-cell simulation are made and confirm striking agreement between the theory and the simulation. For fast electron with 1 MeV typical kinetic energy interacting with a solid density hydrogen plasma, the energy deposition density in the transverse direction increases by a factor 2 for magnetic field of the order of 1 T. Along the magnetic field, the energy deposition profile is unaltered compared with the field-free case.

  9. Deposition of a-SiC:H using organosilanes in an argon/hydrogen plasma

    SciTech Connect

    Maya, L.

    1993-12-01

    Selected organosilanes were examined as precursors for the deposition of amorphous hydrogenated silicon carbide in an argon/hydrogen plasma. Effect of process variables on the quality of the films was established by means of FTIR, Auger spectroscopy, XPS, XRD, chemical analysis, and weight losses upon pyrolysis. For a given power level there is a limiting feeding rate of the precursor under which operation of the system is dominated by thermodynamics and leads to high quality silicon carbide films that are nearly stoichiometric and low in hydrogen. Beyond that limit, carbosilane polymer formation and excessive hydrogen incorporation takes place. The hydrogen content of the plasma affects the deposition rate and the hydrogen content of the film. In the thermodynamically dominated regime the nature of the precursor has no effect on the quality of the film, it affects only the relative utilization efficiency.

  10. Optimization of plasma deposition and etching processes for commercial multicrystalline silicon solar cells

    SciTech Connect

    Ruby, D.S.; Wilbanks, W.L.; Fleddermann, C.B.; Rosenblum, M.D.; Roncin, S.; Narayanan, S.

    1996-06-01

    The authors conducted an investigation of plasma deposition and etching processes on full-size multicrystalline (mc-Si) cells processed in commercial production lines, so that any improvements obtained will be immediately relevant to the PV industry. In one case, the authors performed a statistically designed multiparameter experiment to determine the optimum PECVD-nitride deposition conditions specific to EFG silicon from ASE Americas, Inc. In a related effort, they studied whether plasma-etching techniques can use standard screen-printed gridlines as etch masks to form self-aligned, patterned-emitter profiles on mc-Si cells from Solarex Corp. Initial results found a statistically significant improvement of about half an absolute percentage point in cell efficiency when the self-aligned emitter etchback was combined with the PECVD-nitride surface passivation treatment. Additional improvement is expected when the successful bulk passivation treatment is also added to the process.

  11. Development of dielectric barrier discharge plasma processing apparatus for mass spectrometry and thin film deposition

    NASA Astrophysics Data System (ADS)

    Majumdar, Abhijit; Hippler, Rainer

    2007-07-01

    Cost effective and a very simple dielectric barrier discharge plasma processing apparatus for thin film deposition and mass spectroscopic analysis of organic gas mixture has been described. The interesting features of the apparatus are the construction of the dielectric electrodes made of aluminum oxide or alumina (Al2O3) and glass and the generation of high ignition voltage from the spark plug transformer taken from car. Metal capacitor is introduced in between ground and oscilloscope to measure the executing power during the discharge and the average electron density in the plasma region. The organic polymer films have been deposited on Si (100) substrate using several organic gas compositions. The experimental setup provides a unique drainage system from the reaction chamber controlled by a membrane pump to suck out and remove the poisonous gases or residuals (cyanogens, H-CN, CHxNH2, etc.) which have been produced during the discharge of CH4/N2 mixture.

  12. Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Tarala, V. A.; Altakhov, A. S.; Ambartsumov, M. G.; Martens, V. Ya.

    2017-01-01

    The possibility of growing oriented AlN films on Al2O3 substrates at temperatures below 300°C by plasma-enhanced atomic layer deposition was examined. The samples were subjected to X-ray phase analysis and ellipsometry. It was demonstrated that the refraction index of films deposited with plasma exposures longer than 20 s was 2.03 ± 0.03. The (0002) and (0004) reflections at 2Θ angles of 35.7° and 75.9° were present in the X-ray diffraction patterns of these samples. These reflections are typical of the hexagonal AlN polytype. The full width at half maximum of the rocking curve of reflection (0002) in the best sample was 162 ± 11 arcsec.

  13. Plasma polymerization and deposition of linear, cyclic and aromatic fluorocarbons on (100)-oriented single crystal silicon substrates

    NASA Astrophysics Data System (ADS)

    Yang, G. H.; Oh, S. W.; Kang, E. T.; Neoh, K. G.

    2002-11-01

    Fluoropolymer films were deposited on the Ar plasma-pretreated Si(100) surfaces by plasma polymerization of perfluorohexane (PFH, a linear fluorocarbon), perfluoro(methylcyclohexane) (MCH, a cyclic fluorocarbon), and hexafluorobenzene (HFB, an aromatic fluorocarbon) under different glow discharge conditions. The effects of the radio-frequency plasma power on the chemical composition and structure of the plasma-polymerized fluoropolymer films were studied by x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, time-of-flight secondary ion mass spectrometry, and water contact angle measurements. The changes in structure and composition of the three types of the plasma-deposited films from those of the respective fluorocarbons were compared. Under similar glow discharge conditions: (i) the extent of defluorination was highest for the PFH polymer, (ii) the deposition rate was highest for the HFB polymer, (iii) the cyclic structure of MCH was less well preserved than the aromatic structure of HFB, (iv) aliphatic structures appeared in the plasma-deposited MCH polymer, and (v) the plasma-polymerized HFB has the highest thermal stability due to the preservation of the aromatic rings. The adhesive tape peel test results revealed that the plasma-polymerized and deposited fluoropolymer layers were strongly bonded to the Ar plasma-pretreated Si(100) surfaces.

  14. Characterization of TiO x film prepared by plasma enhanced chemical vapor deposition using a multi-jet hollow cathode plasma source

    NASA Astrophysics Data System (ADS)

    Nakamura, Masatoshi; Korzec, Dariusz; Aoki, Toru; Engemann, Jurgen; Hatanaka, Yoshinori

    2001-05-01

    The high rate deposition of TiO x film at low temperature was achieved by plasma enhanced chemical vapor deposition (PECVD) using titanium tetraisopropoxide (TTIP) as a source material. The multi-jet hollow cathode plasma source was used to generate the high-density plasma, which was showered toward the substrate. The emission spectra suggest that oxygen radicals play an important role for dissociation of the source material and for yielding the precursors. The high deposition rate up to 50 nm/min was achieved by this process. The as-deposited films are completely amorphous. They consist of structures with complex bondings including both tetrahedral and octahedral components. Though they have such complex bondings, the hydrophilicity of the PECVD film is excellent comparing to that of the annealed crystalline anatase structure. It seems that the PECVD using the multi-jet plasma source is promising for fabrication of hydrophilic TiO x films in low-temperature process.

  15. Improved film quality of plasma enhanced atomic layer deposition SiO{sub 2} using plasma treatment cycle

    SciTech Connect

    Kim, Haiwon; Chung, Ilsub; Kim, Seokyun; Shin, Seungwoo; Jung, Wooduck; Hwang, Ryong; Jeong, Choonsik; Hwang, Hanna

    2015-01-15

    Chemical, physical, and electrical characteristics of high quality silicon dioxide (SiO{sub 2}) films grown using low temperature plasma enhanced atomic layer deposition (PE-ALD) have been investigated as a buffer layer for three dimensional vertical NAND flash memory devices. The comparative angle resolved x-ray photoelectron spectroscopy studies show the plasma treatment cycle causes to shift the core level binding energy (chemical shifts) in the SiO{sub 2} film. The wet etch rates with respect to plasma treatment cycle times were varied due to curing of the SiO{sub 2} network defects by Ar{sup +} ions and oxygen radicals. It is assumed that the angle between the bonds linking SiO{sub 4} tetrahedra is a critical point understanding the variation in wet etch rate of SiO{sub 2}. The features of wet etch rate of low temperature high quality SiO{sub 2} demonstrated lower than high temperature low-pressure chemical vapor deposition (LP-CVD) SiO{sub 2} values. In addition, the better step-coverage compared to that of the LP-CVD SiO{sub 2} film was achieved from the deep trench structure having the 20:1 aspect ratio. PE-ALD SiO{sub 2} with plasma treatment cycle showed excellent I–V properties with higher breakdown voltage compared to LP-CVD SiO{sub 2} and similar to the thermal SiO{sub 2} carrier transport plot.

  16. Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering

    SciTech Connect

    Khan, Majid; Islam, Mohammad

    2013-12-15

    Molebdenum (Mo) thin films were deposited on well-cleaned soda-lime glass substrates using DC-plasma magnetron sputtering. In the design of experiment deposition was optimized for maximum beneficial characteristics by monitoring effect of process variables such as deposition power (100–200 W). Their electrical, structural and morphological properties were analyzed to study the effect of these variables. The electrical resistivity of Mo thin films could be reduced by increasing deposition power. Within the range of analyzed deposition power, Mo thin films showed a mono crystalline nature and the crystallites were found to have an orientation along [110] direction. The surface morphology of thin films showed that a highly dense micro structure has been obtained. The surface roughness of films increased with deposition power. The adhesion of Mo thin films could be improved by increasing the deposition power. Atomic force microscopy was used for the topographical study of the films and to determine the roughness of the films. X-ray diffractrometer and scanning electron microscopy analysis were used to investigate the crystallinity and surface morphology of the films. Hall effect measurement system was used to find resistivity, carrier mobility and carrier density of deposited films. The adhesion test was performed using scotch hatch tape adhesion test. Mo thin films prepared at deposition power of 200 W, substrate temperature of 23°C and Ar pressure of 0.0123 mbar exhibited a mono crystalline structure with an orientation along (110) direction, thickness of ∼550 nm and electrical resistivity value of 0.57 × 10{sup −4} Ω cm.

  17. Solid oxide fuel cell electrolytes produced via very low pressure suspension plasma spray and electrophoretic deposition

    NASA Astrophysics Data System (ADS)

    Fleetwood, James D.

    Solid oxide fuel cells (SOFCs) are a promising element of comprehensive energy policies due to their direct mechanism for converting the oxidization of fuel, such as hydrogen, into electrical energy. Both very low pressure plasma spray and electrophoretic deposition allow working with high melting temperature SOFC suspension based feedstock on complex surfaces, such as in non-planar SOFC designs. Dense, thin electrolytes of ideal composition for SOFCs can be fabricated with each of these processes, while compositional control is achieved with dissolved dopant compounds that are incorporated into the coating during deposition. In the work reported, sub-micron 8 mole % Y2O3-ZrO2 (YSZ) and gadolinia-doped ceria (GDC), powders, including those in suspension with scandium-nitrate dopants, were deposited on NiO-YSZ anodes, via very low pressure suspension plasma spray (VLPSPS) at Sandia National Laboratories' Thermal Spray Research Laboratory and electrophoretic deposition (EPD) at Purdue University. Plasma spray was carried out in a chamber held at 320 - 1300 Pa, with the plasma composed of argon, hydrogen, and helium. EPD was characterized utilizing constant current deposition at 10 mm electrode separation, with deposits sintered from 1300 -- 1500 °C for 2 hours. The role of suspension constituents in EPD was analyzed based on a parametric study of powder loading, powder specific surface area, polyvinyl butyral (PVB) content, polyethyleneimine (PEI) content, and acetic acid content. Increasing PVB content and reduction of particle specific surface area were found to eliminate the formation of cracks when drying. PEI and acetic acid content were used to control suspension stability and the adhesion of deposits. Additionally, EPD was used to fabricate YSZ/GDC bilayer electrolyte systems. The resultant YSZ electrolytes were 2-27 microns thick and up to 97% dense. Electrolyte performance as part of a SOFC system with screen printed LSCF cathodes was evaluated with peak

  18. The growth characteristics of microcrystalline Si thin film deposited by atmospheric pressure plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kwon, Jung-Dae

    2013-11-01

    Microcrystalline silicon thin film was grown by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique with a cylindrical rotary electrode supplied with 150 MHz very-high-frequency power. The crystalline volume fraction could be controlled by changing the flow rate ratio of silane and hydrogen gas during AP-PECVD. We could also control it by regulating the substrate scanning speed. At low substrate scanning speed, the silicon film had a low crystalline volume faction and layer-by-layer structure with alternating layers of amorphous and microcrystalline Si. On the other hand, at high substrate scanning speed, silicon crystals of sizes 25 nm grew homogeneously throughout the whole film.

  19. Distinctive features of kinetics of plasma at high specific energy deposition

    NASA Astrophysics Data System (ADS)

    Lepikhin, Nikita; Popov, Nikolay; Starikovskaia, Svetlana

    2016-09-01

    A nanosecond capillary discharge in pure nitrogen at moderate pressures is used as an experimental tool for plasma kinetics studies at conditions of high specific deposited energy up to 1 eV/molecule. Experimental observations based on electrical (back current shunts, capacitive probe) and spectroscopic measurements (quenching rates; translational, rotational and vibrational temperature measurements) demonstrate that high specific deposited energy, at electric fields of 200-300 Td, can significantly change gas kinetics in the discharge and in the afterglow. The numerical calculations in 1D axially symmetric geometry using experimental data as input parameters show that changes in the plasma kinetics are caused by extremely high excitation degree: up to 10% of molecular nitrogen is electronically excited at present conditions. Distinctive features of kinetics of plasma at high specific energy deposition as well as details of the experimental technique and numerical calculations will be present. The work was partially supported by French National Agency, ANR (PLASMAFLAME Project, 2011 BS09 025 01), AOARD AFOSR, FA2386-13-1-4064 grant (Program Officer Prof. Chiping Li), LabEx Plas@Par and Linked International Laboratory LIA KaPPA (France-Russia).

  20. Surface Passivation of ZrO2 Artificial Dentures by Magnetized Coaxial Plasma deposition

    NASA Astrophysics Data System (ADS)

    Arai, Soya; Kurumi, Satoshi; Matsuda, Ken-Ichi; Suzuki, Kaoru; Hara, Katsuya; Kato, Tatsuya; Asai, Tomohiko; Hirose, Hideharu; Masutani, Shigeyuki; Nihon University Team

    2015-09-01

    Recent growth and fabrication technologies for functional materials have been greatly contributed to drastic development of oral surgery field. Zirconia based ceramics is expected to utilize artificial dentures because these ceramics have good biocompatibility, high hardness and aesthetic attractively. However, to apply these ceramics to artificial dentures, this denture is removed from a dental plate because of weakly bond. For improving this problem, synthesis an Al passivation-layer on the ceramics for bonding with these dental items is suitable. In order to deposit the passivation layer, we focused on a magnetized coaxial plasma deposition (MCPD). The greatest characteristic of MCPD is that high-melting point metal can be deposited on various substrates. Additionally, adhesion force between substrate and films deposited by the MCPD is superior to it of general deposition methods. In this study, we have reported on the growth techniques of Al films on ZrO2 for contributing to oral surgery by the MCPD. Surface of deposited films shows there were some droplets and thickness of it is about 200 nm. Thickness is increased to 500 nm with increasing applied voltage.

  1. Low-temperature deposition of transparent diamond films with a microwave cavity plasma reactor

    NASA Astrophysics Data System (ADS)

    Ulczynski, Michael J.

    1998-10-01

    Low-temperature diamond deposition with Microwave Cavity Plasma Reactor (MCPR) technology was investigated for application to temperature sensitive substrates. The substrate temperature during most CVD diamond deposition processes is typically greater then 600 C; however, there are some applications where temperature sensitive materials are used and the deposition temperature must be maintained below 550 C. These applications include materials like boro-silicate glass, which has a relatively low strain-point temperature, and integrated circuits that contain low melting point components. Experiments were conducted in three areas. The first area was MCPR development, the second was benchmark deposition and characterization of diamond films on silicon substrates and the third was deposition and characterization of diamond films on boro-silicate glass substrates. MCPR development included an investigation of various MCPR configurations that were designed and adapted for uniform, low-temperature diamond deposition over areas as large as 80-cm2. Reactors were investigated with end-feed microwave excitation and side-feed microwave excitation for maximum deposition area and uniformity. Various substrate receptor configurations were also investigated including a substrate heater and cooler. From these investigations, deposition parameters such as substrate temperature, deposition rate, deposition area and deposition uniformity were characterized. The benchmark silicon diamond deposition experiments were conducted for comparison to previous high temperature, >550 C, MCPR research and growth models. Here deposition results such as deposition rate and film quality were compared with applications of diamond growth models by Harris-Goodwin and Bachmann. Additionally, characterization experiments were conducted to investigate film attributes that are critical to optical applications, such as film surface roughness and deposition uniformity. Included as variables in these

  2. Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization

    PubMed Central

    2017-01-01

    A novel method to form ultrathin, uniform Al2O3 layers on graphene using reversible hydrogen plasma functionalization followed by atomic layer deposition (ALD) is presented. ALD on pristine graphene is known to be a challenge due to the absence of dangling bonds, leading to nonuniform film coverage. We show that hydrogen plasma functionalization of graphene leads to uniform ALD of closed Al2O3 films down to 8 nm in thickness. Hall measurements and Raman spectroscopy reveal that the hydrogen plasma functionalization is reversible upon Al2O3 ALD and subsequent annealing at 400 °C and in this way does not deteriorate the graphene’s charge carrier mobility. This is in contrast with oxygen plasma functionalization, which can lead to a uniform 5 nm thick closed film, but which is not reversible and leads to a reduction of the charge carrier mobility. Density functional theory (DFT) calculations attribute the uniform growth on both H2 and O2 plasma functionalized graphene to the enhanced adsorption of trimethylaluminum (TMA) on these surfaces. A DFT analysis of the possible reaction pathways for TMA precursor adsorption on hydrogenated graphene predicts a binding mechanism that cleans off the hydrogen functionalities from the surface, which explains the observed reversibility of the hydrogen plasma functionalization upon Al2O3 ALD.

  3. Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition.

    PubMed

    Muñoz, R; Munuera, C; Martínez, J I; Azpeitia, J; Gómez-Aleixandre, C; García-Hernández, M

    2017-03-01

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω·sq(-1). The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

  4. Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography

    NASA Astrophysics Data System (ADS)

    Liu, Zhengjun; Shah, Ali; Alasaarela, Tapani; Chekurov, Nikolai; Savin, Hele; Tittonen, Ilkka

    2017-02-01

    In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO2 hard mask. The PEALD process greatly decreases the deposition temperature of the SiO2 hard mask. FIB Ga+ ion implantation on the deposited SiO2 layer increases the wet etch resistivity of the irradiated region. A programmed exposure in FIB followed by development in a wet etchant enables the precisely defined nanoscale patterning. The combination of FIB exposure parameters and the development time provides greater freedom for optimization. The developed process provides high pattern dimension accuracy over the tested range of 90–210 nm. Utilizing the SiO2 mask developed in this work, silicon nanopillars with 40 nm diameter were successfully fabricated with cryogenic deep reactive ion etching and the aspect ratio reached 16:1. The fabricated mask is suitable for sub-100 nm high aspect ratio silicon structure fabrication.

  5. Low temperature metal free growth of graphene on insulating substrates by plasma assisted chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Muñoz, R.; Munuera, C.; Martínez, J. I.; Azpeitia, J.; Gómez-Aleixandre, C.; García-Hernández, M.

    2017-03-01

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650 °C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

  6. Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography.

    PubMed

    Liu, Zhengjun; Shah, Ali; Alasaarela, Tapani; Chekurov, Nikolai; Savin, Hele; Tittonen, Ilkka

    2017-02-24

    In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO2 hard mask. The PEALD process greatly decreases the deposition temperature of the SiO2 hard mask. FIB Ga(+) ion implantation on the deposited SiO2 layer increases the wet etch resistivity of the irradiated region. A programmed exposure in FIB followed by development in a wet etchant enables the precisely defined nanoscale patterning. The combination of FIB exposure parameters and the development time provides greater freedom for optimization. The developed process provides high pattern dimension accuracy over the tested range of 90-210 nm. Utilizing the SiO2 mask developed in this work, silicon nanopillars with 40 nm diameter were successfully fabricated with cryogenic deep reactive ion etching and the aspect ratio reached 16:1. The fabricated mask is suitable for sub-100 nm high aspect ratio silicon structure fabrication.

  7. Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition

    PubMed Central

    Muñoz, R.; Munuera, C.; Martínez, J. I.; Azpeitia, J.; Gómez-Aleixandre, C.; García-Hernández, M.

    2016-01-01

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω·sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies. PMID:28070341

  8. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF{sub 6} based plasmas

    SciTech Connect

    Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri

    2012-01-15

    The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 deg. C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF{sub 6} and O{sub 2} under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film's removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF{sub x}{sup +} and O{sup +} chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF{sub 6} based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

  9. Permeation mechanisms of pulsed microwave plasma deposited silicon oxide films for food packaging applications

    NASA Astrophysics Data System (ADS)

    Deilmann, Michael; Grabowski, Mirko; Theiß, Sebastian; Bibinov, Nikita; Awakowicz, Peter

    2008-07-01

    Silicon oxide barrier layers are deposited on polyethylene terephthalate as permeation barriers for food packaging applications by means of a low pressure microwave plasma. Hexamethyldisiloxane (HMDSO) and oxygen are used as process gases to deposit SiOx coatings via pulsed low pressure plasmas. The layer composition of the coating is investigated by Fourier transform infrared spectroscopy and energy dispersive x-ray spectroscopy to show correlations with barrier properties of the films. The oxygen permeation barrier is determined by the carrier gas method using an electrochemical detector. The transition from low to high barrier films is mapped by the transition from organic SiOxCyHz layers to quartz-like SiO1.7 films containing silanol bound hydrogen. A residual permeation as low as J = 1 ± 0.3 cm3 m-2 day-1 bar-1 is achieved, which is a good value for food packaging applications. Additionally, the activation energy Ep of oxygen permeation is analysed and a strong increase from Ep = 31.5 kJ mol-1 for SiOx CyHz-like coatings to Ep = 53.7 kJ mol-1 for SiO1.7 films is observed by increasing the oxygen dilution of HMDSO:O2 plasma. The reason for the residual permeation of high barrier films is discussed and coating defects are visualized by capacitively coupled atomic oxygen plasma etching of coated substrates. A defect density of 3000 mm-2 is revealed.

  10. Atmospheric pressure plasma deposition of antimicrobial coatings on non-woven textiles

    NASA Astrophysics Data System (ADS)

    Nikiforov, Anton Yu.; Deng, Xiaolong; Onyshchenko, Iuliia; Vujosevic, Danijela; Vuksanovic, Vineta; Cvelbar, Uros; De Geyter, Nathalie; Morent, Rino; Leys, Christophe

    2016-08-01

    A simple method for preparation of nanoparticle incorporated non-woven fabric with high antibacterial efficiency has been proposed based on atmospheric pressure plasma process. In this work direct current plasma jet stabilized by fast nitrogen flow was used as a plasma deposition source. Three different types of the nanoparticles (silver, copper and zinc oxide nanoparticles) were employed as antimicrobial agents. X-ray photoelectron spectroscopy (XPS) measurements have shown a positive chemical shift observed for Ag 3d 5/2 (at 368.1 eV) suggests that silver nanoparticles (AgNPs) are partly oxidized during the deposition. The surface chemistry and the antibacterial activity of the samples against Staphylococcus aureus and Escherichia coli were investigated and analyzed. It is shown that the samples loaded with nanoparticles of Ag and Cu and having the barrier layer of 10 nm characterized by almost 97% of bacterial reduction whereas the samples with ZnO nanoparticles provide 86% reduction of Staphylococcus aureus. Contribution to the topical issue "6th Central European Symposium on Plasma Chemistry (CESPC-6)", edited by Nicolas Gherardi, Ester Marotta and Cristina Paradisi

  11. Fourth-generation plasma immersion ion implantation and deposition facility for hybrid surface modification layer fabrication

    SciTech Connect

    Wang Langping; Huang Lei; Xie Zhiwen; Wang Xiaofeng; Tang Baoyin

    2008-02-15

    The fourth-generation plasma immersion ion implantation and deposition (PIIID) facility for hybrid and batch treatment was built in our laboratory recently. Comparing with our previous PIIID facilities, several novel designs are utilized. Two multicathode pulsed cathodic arc plasma sources are fixed on the chamber wall symmetrically, which can increase the steady working time from 6 h (the single cathode source in our previous facilities) to about 18 h. Meanwhile, the inner diameter of the pulsed cathodic arc plasma source is increased from the previous 80 to 209 mm, thus, large area metal plasma can be obtained by the source. Instead of the simple sample holder in our previous facility, a complex revolution-rotation sample holder composed of 24 shafts, which can rotate around its axis and adjust its position through revolving around the center axis of the vacuum chamber, is fixed in the center of the vacuum chamber. In addition, one magnetron sputtering source is set on the chamber wall instead of the top cover in the previous facility. Because of the above characteristic, the PIIID hybrid process involving ion implantation, vacuum arc, and magnetron sputtering deposition can be acquired without breaking vacuum. In addition, the PIIID batch treatment of cylinderlike components can be finished by installing these components on the rotating shafts on the sample holder.

  12. Characterizations of GaN film growth by ECR plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Fu, Silie; Chen, Junfang; Zhang, Hongbin; Guo, Chaofen; Li, Wei; Zhao, Wenfen

    2009-06-01

    The electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition technology (ECR-MOPECVD) is adopted to grow GaN films on (0 0 0 1) α-Al2O3 substrate. The gas sources are pure N2 and trimethylgallium (TMG). Optical emission spectroscopy (OES) and thermodynamic analysis of GaN growth are applied to understand the GaN growth process. The OES of ECR plasma shows that TMG is significantly dissociated in ECR plasma. Reactants N and Ga in the plasma, obtained easily under the self-heating condition, are essential for the GaN growth. They contribute to the realization of GaN film growth at a relatively low temperature. The thermodynamic study shows that the driving force for the GaN growth is high when N2:TMG>1. Furthermore, higher N2:TMG flow ratio makes the GaN growth easier. Finally, X-ray diffraction, photoluminescence, and atomic force microscope are applied to investigate crystal quality, morphology, and roughness of the GaN films. The results demonstrate that the ECR-MOPECVD technology is favorable for depositing GaN films at low temperatures.

  13. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    SciTech Connect

    Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Alexander, Duncan T. L.; Jeangros, Quentin; Ballif, Christophe; De Wolf, Stefaan

    2014-08-05

    Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.

  14. Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study

    SciTech Connect

    Sowińska, Małgorzata Henkel, Karsten; Schmeißer, Dieter; Kärkkänen, Irina; Schneidewind, Jessica; Naumann, Franziska; Gruska, Bernd; Gargouri, Hassan

    2016-01-15

    The process parameters' impact of the plasma-enhanced atomic layer deposition (PE-ALD) method on the oxygen to nitrogen (O/N) ratio in titanium oxynitride (TiO{sub x}N{sub y}) films was studied. Titanium(IV)isopropoxide in combination with NH{sub 3} plasma and tetrakis(dimethylamino)titanium by applying N{sub 2} plasma processes were investigated. Samples were characterized by the in situ spectroscopic ellipsometry, x-ray photoelectron spectroscopy, and electrical characterization (current–voltage: I-V and capacitance–voltage: C-V) methods. The O/N ratio in the TiO{sub x}N{sub y} films is found to be very sensitive for their electric properties such as conductivity, dielectric breakdown, and permittivity. Our results indicate that these PE-ALD film properties can be tuned, via the O/N ratio, by the selection of the process parameters and precursor/coreactant combination.

  15. Characteristics of nanocomposite ZrO2/Al2O3 films deposited by plasma-enhanced atomic layer deposition.

    PubMed

    Yun, Sun Jin; Lim, Jung Wook; Kim, Hyun-Tak

    2007-11-01

    Nanocomposite ZrO2/Al2O3 (ZAO) films were deposited on Si by plasma-enhanced atomic layer deposition and the film characteristics including interfacial oxide formation, dielectric constant (k), and electrical breakdown strength were investigated without post-annealing process. In both the mixed and nano-laminated ZAO films, the thickness of the interfacial oxide layer (T(IL)) was considerably reduced compared to ZrO2 and Al2O3 films. The T(IL) was 0.8 nm in nano-composite films prepared at a mixing ratio (ZrO2:Al2O3) of 1:1. The breakdown strength and the leakage current level were greatly improved by adding Al2O3 as little as 7.9% compared to that of ZrO2 and were enhanced more with increasing content of Al2O3. The k of ZrO2 and mixed ZAO (Al2O3 7.9%) films were 20.0 and 16.5, respectively. These results indicate that the addition of Al2O3 to ZrO2 greatly improves the electrical properties with less cost of k compared to the addition of SiO2.

  16. Deposition of zinc oxide photoelectrode using plasma enhanced chemical vapor deposition for dye-sensitized solar cells.

    PubMed

    Lee, Su Young; Kim, Sang Ho

    2014-12-01

    We investigated the characteristics of zinc oxide (ZnO) photoelectrodes grown by plasma enhanced chemical vapor deposition. ZnO has many advantages, such as high binding energy, breakdown strength, cohesion, hardness, and electron mobility. On the F-doped SnO2 (FTO) electrode, we deposited ZnO as a function of thickness, and we examined the thickness effect on the I-V, fill factor, open-circuit voltage, short-circuit current density, and especially the power conversion efficiency of the built in dye-sensitized solar cell. To study the thickness effect on the conduction and recombination of electrons in the ZnO electrode, we analyzed the alignment of grains, crystallinity, impedance, and cyclic I-V properties. The thickness of ZnO changed the electron diffusion length and recombination time. As a result, the maximum power conversion efficiency of 2.63% was obtained with a moderately thick (8.06 μm) ZnO.

  17. Disilane as a growth rate catalyst of plasma deposited microcrystalline silicon thin films

    NASA Astrophysics Data System (ADS)

    Dimitrakellis, P.; Kalampounias, A. G.; Spiliopoulos, N.; Amanatides, E.; Mataras, D.; Lahootun, V.; Coeuret, F.; Madec, A.

    2016-07-01

    The effect of small disilane addition on the gas phase properties of silane-hydrogen plasmas and the microcrystalline silicon thin films growth is presented. The investigation was conducted in the high pressure regime and for constant power dissipation in the discharge with the support of plasma diagnostics, thin film studies and calculations of discharge microscopic parameters and gas dissociation rates. The experimental data and the calculations show a strong effect of disilane on the electrical properties of the discharge in the pressure window from 2 to 3 Torr that is followed by significant raise of the electron number density and the drop of the sheaths electric field intensity. Deposition rate measurements show an important four to six times increase even for disilane mole fractions as low as 0.3 %. The deposition rate enhancement was followed by a drop of the material crystalline volume fraction but films with crystallinity above 40 % were deposited with different combinations of total gas pressure, disilane and silane molar ratios. The enhancement was partly explained by the increase of the electron impact dissociation rate of silane which rises by 40% even for 0.1% disilane mole fraction. The calculations of the gas usage, the dissociation and the deposition efficiencies show that the beneficial effect on the growth rate is not just the result of the increase of Si-containing molecules density but significant changes on the species participating to the deposition and the mechanism of the film growth are caused by the disilane addition. The enhanced participation of the highly sticking to the surface radical such as disilylene, which is the main product of disilane dissociation, was considered as the most probable reason for the significant raise of the deposition efficiency. The catalytic effect of such type of radical on the surface reactivity of species with lower sticking probability is further discussed, while it is also used to explain the restricted

  18. Plasma parameters of pulsed-dc discharges in methane used to deposit diamondlike carbon films

    SciTech Connect

    Corbella, C.; Rubio-Roy, M.; Bertran, E.; Andujar, J. L.

    2009-08-01

    Here we approximate the plasma kinetics responsible for diamondlike carbon (DLC) depositions that result from pulsed-dc discharges. The DLC films were deposited at room temperature by plasma-enhanced chemical vapor deposition (PECVD) in a methane (CH{sub 4}) atmosphere at 10 Pa. We compared the plasma characteristics of asymmetric bipolar pulsed-dc discharges at 100 kHz to those produced by a radio frequency (rf) source. The electrical discharges were monitored by a computer-controlled Langmuir probe operating in time-resolved mode. The acquisition system provided the intensity-voltage (I-V) characteristics with a time resolution of 1 mus. This facilitated the discussion of the variation in plasma parameters within a pulse cycle as a function of the pulse waveform and the peak voltage. The electron distribution was clearly divided into high- and low-energy Maxwellian populations of electrons (a bi-Maxwellian population) at the beginning of the negative voltage region of the pulse. We ascribe this to intense stochastic heating due to the rapid advancing of the sheath edge. The hot population had an electron temperature T{sub e}{sup hot} of over 10 eV and an initial low density n{sub e}{sup hot} which decreased to zero. Cold electrons of temperature T{sub e}{sup cold}approx1 eV represented the majority of each discharge. The density of cold electrons n{sub e}{sup cold} showed a monotonic increase over time within the negative pulse, peaking at almost 7x10{sup 10} cm{sup -3}, corresponding to the cooling of the hot electrons. The plasma potential V{sub p} of approx30 V underwent a smooth increase during the pulse and fell at the end of the negative region. Different rates of CH{sub 4} conversion were calculated from the DLC deposition rate. These were explained in terms of the specific activation energy E{sub a} and the conversion factor x{sub dep} associated with the plasma processes. The work deepens our understanding of the advantages of using pulsed power supplies

  19. Plasma-enhanced deposition of antifouling layers on silicone rubber surfaces

    NASA Astrophysics Data System (ADS)

    Jiang, Hongquan

    In food processing and medical environments, biofilms serve as potential sources of contamination, and lead to food spoilage, transmission of diseases or infections. Because of its ubiquitous and recalcitrant nature, Listeria monocytogenes biofilm is especially hard to control. Generating antimicrobial surfaces provide a method to control the bacterial attachment. The difficulty of silver deposition on polymeric surfaces has been overcome by using a unique two-step plasma-mediated method. First silicone rubber surfaces were plasma-functionalized to generate aldehyde groups. Then thin silver layers were deposited onto the functionalized surfaces according to Tollen's reaction. X-ray photoelectron spectroscopy (XPS), atomic force spectroscopy (AFM) and scanning electron microscopy (SEM) showed that silver particles were deposited. By exposing the silver coated surfaces to L. monocytogenes, it was demonstrated that they were bactericidal to L. monocytogenes. No viable bacteria were detected after 12 to 18 h on silver-coated silicone rubber surfaces. Another antifouling approach is to generate polyethylene glycol (PEG) thin layer instead of silver on polymer surfaces. Covalent bond of PEG structures of various molecular weights to cold-plasma-functionalized polymer surfaces, such as silicone rubber, opens up a novel way for the generation of PEG brush-like or PEG branch-like anti-fouling layers. In this study, plasma-generated surface free radicals can react efficiently with dichlorosilane right after plasma treatment. With the generation of halo-silane groups, this enables PEG molecules to be grafted onto the modified surfaces. XPS data clearly demonstrated the presence of PEG molecules on plasma-functionalized silicone rubber surfaces. AFM images showed the changed surface morphologies as a result of covalent attachment to the surface of PEG molecules. Biofilm experiment results suggest that the PEG brush-like films have the potential ability to be the next

  20. Plasma-Enhanced Chemical Vapor Deposition of SiOx Films Using Electron Beam Generated Plasmas

    DTIC Science & Technology

    2009-09-28

    special relation to the substrate or e-beam. A total flow of 100 sccm was used in all cases . For the gas flows mentioned above, the individual flows...beam generated plasmas. In this case , molecular hydrogen, formed primarily by recombination of atomic hydrogen on system walls, will not be...the films was large (> 130 nm/min), which implied a high porosity for all cases except for low TEOS flow (≤ 2 sccm) at the higher (300 °C) temperature

  1. Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers.

    PubMed

    Andringa, Anne-Marije; Perrotta, Alberto; de Peuter, Koen; Knoops, Harm C M; Kessels, Wilhelmus M M; Creatore, Mariadriana

    2015-10-14

    Encapsulation of organic (opto-)electronic devices, such as organic light-emitting diodes (OLEDs), photovoltaic cells, and field-effect transistors, is required to minimize device degradation induced by moisture and oxygen ingress. SiNx moisture permeation barriers have been fabricated using a very recently developed low-temperature plasma-assisted atomic layer deposition (ALD) approach, consisting of half-reactions of the substrate with the precursor SiH2(NH(t)Bu)2 and with N2-fed plasma. The deposited films have been characterized in terms of their refractive index and chemical composition by spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier-transform infrared spectroscopy (FTIR). The SiNx thin-film refractive index ranges from 1.80 to 1.90 for films deposited at 80 °C up to 200 °C, respectively, and the C, O, and H impurity levels decrease when the deposition temperature increases. The relative open porosity content of the layers has been studied by means of multisolvent ellipsometric porosimetry (EP), adopting three solvents with different kinetic diameters: water (∼0.3 nm), ethanol (∼0.4 nm), and toluene (∼0.6 nm). Irrespective of the deposition temperature, and hence the impurity content in the SiNx films, no uptake of any adsorptive has been observed, pointing to the absence of open pores larger than 0.3 nm in diameter. Instead, multilayer development has been observed, leading to type II isotherms that, according to the IUPAC classification, are characteristic of nonporous layers. The calcium test has been performed in a climate chamber at 20 °C and 50% relative humidity to determine the intrinsic water vapor transmission rate (WVTR) of SiNx barriers deposited at 120 °C. Intrinsic WVTR values in the range of 10(-6) g/m2/day indicate excellent barrier properties for ALD SiNx layers as thin as 10 nm, competing with that of state-of-the-art plasma-enhanced chemical vapor-deposited SiNx layers of a few hundred

  2. Model of a two-stage rf plasma reactor for SiC deposition

    NASA Astrophysics Data System (ADS)

    Petrov, G. M.; Giuliani, J. L.

    2001-07-01

    A reactor is proposed for plasma-enhanced chemical-vapor deposition of silicon carbide (SiC) at low pressure (˜few Torr). The inductively coupled plasma lies upstream of the growth substrate and serves to dissociate the precursor silane/propane/hydrogen inlet gas. Unlike existing reactors, the design offers the potential for separate control of the temperature in the dissociation region and at the growth substrate. The geometrical parameters and flow conditions appropriate for SiC growth are analyzed with a one-dimensional flow simulation model which includes approximations for lateral diffusive losses to cold walls as well as deposition to the substrate. Twenty-one neutral species and 24 ions are followed with 179 reactions. At 3 Torr, 10 W/cm3, and 300 cm/s inlet flow velocity, the model predicts a growth rate of ˜3 μm/h downstream from the plasma. Negligible ion density exists over the substrate as long as the silane density is sufficiently large due to a feedback process between Si+ and SiH4. Besides heating the gas, the plasma is an efficient source of radical H atoms, which in turn control the abundance of some hydrocarbon species over the substrate. C2H2 is the dominant contributor to the C-bearing flux onto the substrate and the Si atom, which forms by electron reactions, is the most important Si-bearing species. Finally, a sensitive transition in deposition rate is found for the C-bearing species as the power increases from 5 to 10 W/cm3.

  3. Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

    DOEpatents

    Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

    1997-07-08

    High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

  4. Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

    DOEpatents

    Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

    1999-08-24

    High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

  5. Deposition of Functional Coatings Based on Intermetallic Systems TiAl on the Steel Surface by Vacuum Arc Plasma

    NASA Astrophysics Data System (ADS)

    Budilov, V.; Vardanyan, E.; Ramazanov, K.

    2015-11-01

    Laws governing the formation of intermetallic phase by sequential deposition of nano-sized layers coatings from vacuum arc plasma were studied. Mathematical modeling process of deposition by vacuum arc plasma was performed. In order to identify the structural and phase composition of coatings and to explain their physical and chemical behaviour XRD studies were carried out. Production tests of the hardened punching tools were performed.

  6. Chain Assemblies from Nanoparticles Synthesized by Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition: The Computational View.

    PubMed

    Mishin, Maxim V; Zamotin, Kirill Y; Protopopova, Vera S; Alexandrov, Sergey E

    2015-12-01

    This article refers to the computational study of nanoparticle self-organization on the solid-state substrate surface with consideration of the experimental results, when nanoparticles were synthesised during atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD). The experimental study of silicon dioxide nanoparticle synthesis by AP-PECVD demonstrated that all deposit volume consists of tangled chains of nanoparticles. In certain cases, micron-sized fractals are formed from tangled chains due to deposit rearrangement. This work is focused on the study of tangled chain formation only. In order to reveal their formation mechanism, a physico-mathematical model was developed. The suggested model was based on the motion equation solution for charged and neutral nanoparticles in the potential fields with the use of the empirical interaction potentials. In addition, the computational simulation was carried out based on the suggested model. As a result, the influence of such experimental parameters as deposition duration, particle charge, gas flow velocity, and angle of gas flow was found. It was demonstrated that electrical charges carried by nanoparticles from the discharge area are not responsible for the formation of tangled chains from nanoparticles, whereas nanoparticle kinetic energy plays a crucial role in deposit morphology and density. The computational results were consistent with experimental results.

  7. Plasma-enhanced deposition and processing of transition metals and transition metal silicides for VLSI

    NASA Astrophysics Data System (ADS)

    Hess, D. W.

    1986-05-01

    Radiofrequency (rf) discharges have been used to deposit films of tungsten, molybdenum and titanium silicide. As-deposited tungsten films, from tungsten hexafluoride and hydrogen source gases, were metastable (beta W), with significant (>1 atomic percent) fluorine incorporation. Film resistivities were 40-55 micro ohm - cm due to the beta W, but dropped to about 8 micro ohm cm after a short heat treatment at 700 C which resulted in a phase transition to alpha W (bcc form). The high resistivity (>10,000 micro ohm) associated with molybdenum films deposited from molybdenum hexafluoride and hydrogen appeared to be a result of the formation of molybdenum trifluoride in the deposited material. Titanium silicide films formed from a discharge of titanium tetrachloride, silane, and hydrogen, displayed resistivities of about 150 micro ohm cm, due to small amounts of oxygen and chlorine incorporated during deposition. Plasma etching studies of tungsten films with fluorine containing gases suggest that the etchant species for tungsten in these discharges are fluorine atoms.

  8. Differing morphologies of textured diamond films with electrical properties made with microwave plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lai, Wen Chi; Wu, Yu-Shiang; Chang, Hou-Cheng; Lee, Yuan-Haun

    2010-12-01

    This study investigates the orientation of textured diamond films produced through microwave plasma chemical vapor deposition (MPCVD) at 1200 W, 110 Torr, CH 4/H 2 = 1/20, with depositions times of 0.5-4.0 h. After a growth period of 2.0-4.0 h, this particular morphology revealed a rectangular structure stacked regularly on the diamond film. The orientation on {1 1 1}-textured diamond films grew a preferred orientation of {1 1 0} on the surface, as measured by XRD. The formation of the diamond epitaxial film formed textured octahedrons in ball shaped (or cauliflower-like) diamonds in the early stages (0.5 h), and the surface of the diamond film extended to pile the rectangular structure at 4.0 h. The width of the tier was approximately 200 nm at the 3.0 h point of deposition, according to TEM images. The results revealed that the textured diamond films showed two different morphological structures (typical ball shaped and rectangular diamonds), at different stages of the deposition period. The I- V characteristics of the oriented diamond films after 4.0 h of deposition time showed good conformity with the ohmic contact.

  9. Plasma diagnostic approach for the low-temperature deposition of silicon quantum dots using dual frequency PECVD

    NASA Astrophysics Data System (ADS)

    Sahu, B. B.; Yin, Y.; Lee, J. S.; Han, Jeon G.; Shiratani, M.

    2016-10-01

    Although studies of silicon (Si) quantum dots (QDs) were started just a few years ago, progress is noteworthy concerning unique film properties and their potential application for devices. In particular, relating to the Si QD process optimization, it is essential to control the deposition environment by studying the role of plasma parameters and atomic and molecular species in the process plasmas. In this work, we report on advanced material processes for the low-temperature deposition of Si QDs by utilizing radio frequency and ultrahigh frequency dual frequency (DF) plasma enhanced chemical vapor deposition (PECVD) method. DF PECVD can generate a very high plasma density in the range ~9  ×  1010 cm-3 to 3.2  ×  1011 cm-3 at a very low electron temperature (T e) ~ 1.5 to 2.4 eV. The PECVD processes, using a reactive mixture of H2/SiH4/NH3 gases, are carefully studied to investigate the operating regime and to optimize the deposition parameters by utilizing different plasma diagnostic tools. The analysis reveals that a higher ion flux at a higher plasma density on the substrate is conducive to enhancing the overall crystallinity of the deposited film. Along with high-density plasmas, a high concentration of atomic H and N is simultaneously essential for the high growth rate deposition of Si QDs. Numerous plasma diagnostics methods and film analysis tools are used to correlate the effect of plasma- and atomic-radical parameters on the structural and chemical properties of the deposited Si QD films prepared in the reactive mixtures of H2/SiH4/NH3 at various pressures.

  10. Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

    NASA Astrophysics Data System (ADS)

    Aoukar, M.; Szkutnik, P. D.; Jourde, D.; Pelissier, B.; Michallon, P.; Noé, P.; Vallée, C.

    2015-07-01

    Amorphous and smooth GeTe thin films are deposited on 200 mm silicon substrates by plasma enhanced—metal organic chemical vapor deposition (PE-MOCVD) using the commercial organometallic precursors TDMAGe and DIPTe as Ge and Te precursors, respectively. X-ray photoelectron spectroscopy (XPS) measurements show a stoichiometric composition of the deposited GeTe films but with high carbon contamination. Using information collected by Optical Emission Spectroscopy (OES) and XPS, the origin of carbon contamination is determined and the dissociation mechanisms of Ge and Te precursors in H2 + Ar plasma are proposed. As a result, carbon level is properly controlled by varying operating parameters such as plasma radio frequency power, pressure and H2 rate. Finally, GeTe films with carbon level as low as 5 at. % are obtained.

  11. Optical Emission Spectroscopy of Electron Cyclotron Resonance-Plasma Enchanced Metalorganic Chemical Vapor Deposition Process for Deposition of GaN Film

    NASA Astrophysics Data System (ADS)

    Fu, Silie; Chen, Junfang; Li, Yun; Li, Wei; Zhang, Maoping; Hu, Shejun

    2008-02-01

    An investigation was made into the nitrogen-trimethylgallium mixed electron cyclotron resonance (ECR) plasma by optical emission spectroscopy (OES). The ECR plasma enhanced metalorganic chemical vapour deposition technology was adopted to grow GaN film on an α-Al2O3 substrate. X-ray diffraction (XRD) analyses showed that the peak of GaN (0002) was at 2θ = 34.48°, being sharper and more intense with the increase in the N2: trimethylgallium(TMG) flow ratio. The results demonstrate that the electron cyclotron resonance-plasma enchanced metalorganic chemical vapor deposition (ECR-MOPECVD) technology is evidently advantageous for the deposition of GaN film at a low growth temperature.

  12. Surface reaction mechanisms during ozone and oxygen plasma assisted atomic layer deposition of aluminum oxide.

    PubMed

    Rai, Vikrant R; Vandalon, Vincent; Agarwal, Sumit

    2010-09-07

    We have elucidated the reaction mechanism and the role of the reactive intermediates in the atomic layer deposition (ALD) of aluminum oxide from trimethyl aluminum in conjunction with O(3) and an O(2) plasma. In situ attenuated total reflection Fourier transform infrared spectroscopy data show that both -OH groups and carbonates are formed on the surface during the oxidation cycle. These carbonates, once formed on the surface, are stable to prolonged O(3) exposure in the same cycle. However, in the case of plasma-assisted ALD, the carbonates decompose upon prolonged O(2) plasma exposure via a series reaction kinetics of the type, A (CH(3)) --> B (carbonates) --> C (Al(2)O(3)). The ratio of -OH groups to carbonates on the surface strongly depends on the oxidizing agent, and also the duration of the oxidation cycle in plasma-assisted ALD. However, in both O(3) and O(2) plasma cycles, carbonates are a small fraction of the total number of reactive sites compared to the hydroxyl groups.

  13. PREFACE: VI Scientific Technical Conference on "Low-temperature plasma during the deposition of functional coatings"

    NASA Astrophysics Data System (ADS)

    2014-11-01

    The VI Republican Scientific Technical Conference "Low-temperature plasma during the deposition of functional coatings" took place from 4 to 7 November 2014 at the Academy of Sciences of the Republic of Tatarstan and the Kazan Federal University. The conference was chaired by a Member of the Academy of Sciences of the Republic of Tatarstan Nail Kashapov -Professor, Doctor of Technical Sciences- a member of the Scientific and Technical Council of the Ministry of Economy of the Republic of Tatarstan. At the conference, the participants discussed a wide range of issues affecting the theoretical and computational aspects of research problems in the physics and technology of low-temperature plasma. A series of works were devoted to the study of thin films obtained by low-temperature plasma. This year work dedicated to the related field of heat mass transfer in multiphase media and low-temperature plasma was also presented. Of special interest were reports on the exploration of gas discharges with liquid electrolytic electrotrodes and the study of dusty plasmas. Kashapov Nail, D.Sc., Professor (Kazan Federal University)

  14. All-oxide broadband antireflection coatings by plasma ion assisted deposition: design, simulation, manufacturing and re-optimization.

    PubMed

    Wilbrandt, Steffen; Stenzel, Olaf; Kaiser, Norbert

    2010-09-13

    A new all-oxide design for broadband antireflection coatings with significantly reduced impact of deposition errors to the final reflectance is presented. Computational manufacturing including re-optimization during deposition has been used in the design work to account for maximum insensibility of the design with respect to deposition errors typical for plasma ion assisted deposition PIAD. Repeated deposition runs with the deducted monitoring and re-optimization strategy verify the validity of the simulations and the stability of the derived design solution.

  15. Friction and wear of plasma-deposited amorphous hydrogenated films on silicon nitride

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1991-01-01

    An investigation was conducted to examine the friction and wear behavior of amorphous hydrogenated carbon (a-C:H) films in sliding contact with silicon nitride pins in both dry nitrogen and humid air environments. Amorphous hydrogenated carbon films approximately 0.06 micron thick were deposited on silicon nitride flat substrates by using the 30 kHz ac glow discharge of a planar plasma reactor. The results indicate that an increase in plasma deposition power gives an increase in film density and hardness. The high-density a-C:H films deposited behaved tribologically much like bulk diamond. In the dry nitrogen environment, a tribochemical reaction produced a substance, probably a hydrocarbon-rich layer, that decreased the coefficient of friction. In the humid air environment, tribochemical interactions drastically reduced the wear life of a-C:H films and water vapor greatly increased the friction. Even in humid air, effective lubrication is possible with vacuum-annealed a-C:H films. The vacuum-annealed high-density a-C:H film formed an outermost superficial graphitic layer, which behaved like graphite, on the bulk a-C:H film. Like graphite, the annealed a-C:H film with the superficial graphitic layer showed low friction when adsorbed water vapor was present.

  16. Preparation of a platinum electrocatalyst by coaxial pulse arc plasma deposition

    PubMed Central

    Agawa, Yoshiaki; Tanaka, Hiroyuki; Torisu, Shigemitsu; Endo, Satoshi; Tsujimoto, Akihiro; Gonohe, Narishi; Malgras, Victor; Aldalbahi, Ali; Alshehri, Saad M; Kamachi, Yuichiro; Li, Cuiling; Yamauchi, Yusuke

    2015-01-01

    We have developed a new method of preparing Pt electrocatalysts through a dry process. By coaxial pulse arc plasma deposition (CAPD), highly ionized metal plasma can be generated from a target rod without any discharged gases, and Pt nanoparticles can be deposited on a carbon support. The small-sized Pt nanoparticles are distributed over the entire carbon surface. From transmission electron microscopy (TEM), the average size of the deposited Pt nanoparticles is estimated to be 2.5 nm, and their size distribution is narrow. Our electrocatalyst shows considerably improved catalytic activity and stability toward methanol oxidation reaction (MOR) compared with commercially available Pt catalysts such as Pt black and Pt/carbon (PtC). Inspired by its very high efficiency toward MOR, we also measured the catalytic performance for oxygen reduction reaction (ORR). Our PtC catalyst shows a better performance with half-wave potential of 0.87 V, which is higher than those of commercially available Pt catalysts. The higher performance is also supported by a right-shifted onset potential. Our preparation is simple and could be applied to other metallic nanocrystals as a novel platform in catalysis, fuel cells and biosensors. PMID:27877765

  17. Plasma-enhanced atomic layer deposition for plasmonic TiN

    NASA Astrophysics Data System (ADS)

    Otto, Lauren M.; Hammack, Aaron T.; Aloni, Shaul; Ogletree, D. Frank; Olynick, Deirdre L.; Dhuey, Scott; Stadler, Bethanie J. H.; Schwartzberg, Adam M.

    2016-09-01

    This work presents the low temperature plasma-enhanced atomic layer deposition (PE-ALD) of TiN, a promising plasmonic synthetic metal. The plasmonics community has immediate needs for alternatives to traditional plasmonic materials (e.g. Ag and Au), which lack chemical, thermal, and mechanical stability. Plasmonic alloys and synthetic metals have significantly improved stability, but their growth can require high-temperatures (>400 °C), and it is difficult to control the thickness and directionality of the resulting film, especially on technologically important substrates. Such issues prevent the application of alternative plasmonic materials for both fundamental studies and large-scale industrial applications. Alternatively, PE-ALD allows for conformal deposition on a variety of substrates with consistent material properties. This conformal coating will allow the creation of exotic three-dimensional structures, and low-temperature deposition techniques will provide unrestricted usage across a variety of platforms. The characterization of this new plasmonic material was performed with in-situ spectroscopic ellipsometry as well as Auger electron spectroscopy for analysis of TiN film sensitivity to oxide cross-contamination. Plasmonic TiN films were fabricated, and a chlorine plasma etch was found to pattern two dimensional gratings as a test structure. Optical measurements of 900 nm period gratings showed reasonable agreement with theoretical modeling of the fabricated structures, indicating that ellipsometry models of the TiN were indeed accurate.

  18. Facile plasma-enhanced deposition of ultrathin crosslinked amino acid films for conformal biometallization.

    PubMed

    Anderson, Kyle D; Slocik, Joseph M; McConney, Michael E; Enlow, Jesse O; Jakubiak, Rachel; Bunning, Timothy J; Naik, Rajesh R; Tsukruk, Vladimir V

    2009-03-01

    A novel method for the facile fabrication of conformal, ultrathin, and uniform synthetic amino acid coatings on a variety of practical surfaces by plasma-enhanced chemical vapor deposition is introduced. Tyrosine, which is utilized as an agent to reduce gold nanoparticles from solution, is sublimed into the plasma field and directly deposited on a variety of substrates to form a homogeneous, conformal, and robust polyamino acid coating in a one-step, solvent-free process. This approach is applicable to many practical surfaces and allows surface-induced biometallization while avoiding multiple wet-chemistry treatments that can damage many soft materials. Moreover, by placing a mask over the substrate during deposition, the tyrosine coating can be micropatterned. Upon its exposure to a solution of gold chloride, a network of gold nanoparticles forms on the surface, replicating the initial micropattern. This method of templated biometallization is adaptable to a variety of practical inorganic and organic substrates, such as silicon, glass, nitrocellulose, polystyrene, polydimethylsiloxane, polytetrafluoroethylene, polyethylene, and woven silk fibers. No special pretreatment is necessary, and the technique results in a rapid, conformal amino acid coating that can be utilized for further biometallization.

  19. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    SciTech Connect

    Hemawan, Kadek W.; Gou, Huiyang; Hemley, Russell J.

    2015-11-02

    Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH{sub 4}/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H{sub 2} into the deposition gas chemistry. Electronically excited species of CN, C{sub 2}, Ar, N{sub 2}, CH, H{sub β}, and H{sub α} were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T{sub 2g} phonon at 1333 cm{sup −1} peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

  20. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    SciTech Connect

    Gou, Huiyang; Hemley, Russell J.; Hemawan, Kadek W.

    2015-11-02

    Polycrystalline diamond has been successfully synthesized on silicon substrates at atmospheric pressure using a microwave capillary plasma chemical vapor deposition technique. The CH4/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H2 into the deposition gas chemistry. Electronically excited species of CN, C2, Ar, N2, CH, Hβ and Hα were observed in emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T2g phonon at 1333 cm-1 peak relative to the Raman features of graphitic carbon. Furthermore, field emission scanning electron microscopy (SEM) images reveal that, depending on the on growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

  1. Time-resolved diagnostics of excimer laser-generated ablation plasmas used for pulsed laser deposition

    SciTech Connect

    Geohegan, D.B.

    1994-09-01

    Characteristics of laser plasmas used for pulsed laser deposition (PLD) of thin films are examined with four in situ diagnostic techniques: Optical emission spectroscopy, optical absorption spectroscopy, ion probe studies, and gated ICCD (intensified charge-coupled-device array) fast photography. These four techniques are complementary and permit simultaneous views of the transport of ions, excited states, ground state neutrals and ions, and hot particulates following KrF laser ablation of YBCO, BN, graphite and Si in vacuum and background gases. The implementation and advantages of the four techniques are first described in order to introduce the key features of laser plasmas for pulsed laser deposition. Aspects of the interaction of the ablation plume with background gases (i.e., thermalization, attenuation, shock formation) and the collision of the plasma plume with the substrate heater are then summarized. The techniques of fast ICCD photography and gated photon counting are then applied to investigate the temperature, velocity, and spatial distribution of hot particles generated during KrF ablation of YBCO, BN, Si and graphite. Finally, key features of fast imaging of the laser ablation of graphite into high pressure rare gases are presented in order to elucidate internal reflected shocks within the plume, redeposition of material on a surface, and formation of hot nanoparticles within the plume.

  2. Fluoropolymer Films Deposited by RF Plasma Sputtering of Polytetrafluoroethylene Using Inert Gases

    NASA Technical Reports Server (NTRS)

    Golub, Morton A.; Wydeven, Theodore; Kliss, Mark (Technical Monitor)

    1998-01-01

    The FT-IR (Fourier Transform Infrared), UV (Ultraviolet) and XPS (X Ray Photoelectron Spectroscopy) spectra of fluoropolymer films (SPTFE) deposited by rf (radio frequency) plasma sputtering of polytetrafluoroethylene (PTFE), using Ne, Kr and Xe as sputtering gases, were obtained and compared with prior spectra for SPTFE formed using He and Ar. The F/C (fluorine / carbon) ratios for SPTFE films (1.44-1.55), obtained at a rf power of 10 W, were essentially the same for all five rare gases, there being no trend of decreasing fluorine content in the SPTFE product with increasing atomic weight of the sputtering gas - contrary to the momentum transfer notion advanced by M. E. Ryan, et al. Increasing rf power from 10 to 50 W resulted in successively lower F/C ratios for SPTFE (e.g., from 1.55 to 1.21 in the case of Xe plasma-sputtered PTFE), accompanied by sputtering of the glass reactor and deposition of fragments of sodium aluminum silicate occurring at 40 W and above. In order to achieve a "Teflon-like" SPTFE structure (i.e., products with as high a F/C ratio as possible) in a given plasma reactor, an optimum rf power must be found, which in the present case was approximately 10 W.

  3. Formation of microchannels from low-temperature plasma-deposited silicon oxynitride

    DOEpatents

    Matzke, Carolyn M.; Ashby, Carol I. H.; Bridges, Monica M.; Manginell, Ronald P.

    2000-01-01

    A process for forming one or more fluid microchannels on a substrate is disclosed that is compatible with the formation of integrated circuitry on the substrate. The microchannels can be formed below an upper surface of the substrate, above the upper surface, or both. The microchannels are formed by depositing a covering layer of silicon oxynitride over a mold formed of a sacrificial material such as photoresist which can later be removed. The silicon oxynitride is deposited at a low temperature (.ltoreq.100.degree. C.) and preferably near room temperature using a high-density plasma (e.g. an electron-cyclotron resonance plasma or an inductively-coupled plasma). In some embodiments of the present invention, the microchannels can be completely lined with silicon oxynitride to present a uniform material composition to a fluid therein. The present invention has applications for forming microchannels for use in chromatography and electrophoresis. Additionally, the microchannels can be used for electrokinetic pumping, or for localized or global substrate cooling.

  4. Surface hardening of VT-22 alloy by inductively coupled plasma nitriding and magnetron deposition of TiN films

    NASA Astrophysics Data System (ADS)

    Kharkov, Maxim M.; Kaziev, Andrey V.; Tumarkin, Alexander V.; Drobinin, Vyacheslav E.; Stepanova, Tatiana V.; Pisarev, Alexander A.

    2017-01-01

    The surface of VT-22 Russian grade titanium alloy samples was modified by inductively coupled plasma (ICP) nitriding followed by magnetron deposition of TiN coatings. Different operating conditions of ICP nitriding and magnetron deposition were considered. The microhardness depth profiles were measured for samples after nitriding. The performance of TiN coatings was examined with a scratch tester.

  5. Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Pouch, J. J.; Alterovitz, S. A.; Pantic, D. M.; Johnson, G. A.

    1988-01-01

    The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

  6. Study on re-sputtering during CN{sub x} film deposition through spectroscopic diagnostics of plasma

    SciTech Connect

    Liang, Peipei; Yang, Xu; Li, Hui; Cai, Hua; Sun, Jian; Xu, Ning; Wu, Jiada

    2015-10-15

    A nitrogen-carbon plasma was generated during the deposition of carbon nitride (CN{sub x}) thin films by pulsed laser ablation of a graphite target in a discharge nitrogen plasma, and the optical emission of the generated nitrogen-carbon plasma was measured for the diagnostics of the plasma and the characterization of the process of CN{sub x} film deposition. The nitrogen-carbon plasma was recognized to contain various species including nitrogen molecules and molecular ions excited in the ambient N{sub 2} gas, carbon atoms and atomic ions ablated from the graphite target and CN radicals. The temporal evolution and spatial distribution of the CN emission and their dependence on the substrate bias voltage show two groups of CN radicals flying in opposite directions. One represents the CN radicals formed as the products of the reactions occurring in the nitrogen-carbon plasma, revealing the reactive deposition of CN{sub x} film due to the reactive expansion of the ablation carbon plasma in the discharge nitrogen plasma and the effective formation of gaseous CN radicals as precursors for CN{sub x} film growth. The other one represents the CN radicals re-sputtered from the growing CN{sub x} film by energetic plasma species, evidencing the re-sputtering of the growing film accompanying film growth. And, the re-sputtering presents ion-induced sputtering features.

  7. Influence of plasma spraying deposition process on optical properties of hydroxyapatite

    NASA Astrophysics Data System (ADS)

    Belka, Radosław; Kowalski, Szymon; Żórawski, Wojciech; Suchańska, Małgorzata

    2015-09-01

    Hydroxyapatite (HAp) is a well-known bioceramic, nonorganic material of the bones of the vertebrate responsible for their mechanical durability. In human bones it occupies 60-80 % of the volume depending on a number of factors. Synthetic HAp is valued in bone endoprosthetic to its high biocompatibility. It is widely used to fill cavities of bone and as the coating of bone implants to increase their biocompatibility and adhesion to bone surface. In this paper a diffuse reflectance spectra of plasma-spraying deposited hydroxyapatite were presented and compared with pure powder samples. Optical band gap were estimated basing on Kubelka-Munk functions and Tauc plot extrapolation. We found that deposition process affects the value of band gap.

  8. Plasma deposited diamondlike carbon on GaAs and InP

    NASA Technical Reports Server (NTRS)

    Warner, J. D.; Pouch, J. J.; Alterovitz, S. A.; Liu, D. C.; Lanford, W. A.

    1984-01-01

    The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cls XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.

  9. Critical issues in plasma deposition of microcrystalline silicon for thin film transistors

    NASA Astrophysics Data System (ADS)

    Roca i Cabarrocas, Pere; Djeridane, Yassine; Bui, V. D.; Bonnassieux, Yvan; Abramov, Alexey

    2008-03-01

    After more than 20 years of research and despite improved transport properties with respect to amorphous silicon, microcrystalline silicon thin film transistors (TFTs) are not yet ready for industrial production. We review here the progress made in the understanding of the growth of this material with particular emphasis on industry relevant aspects such as deposition rate and uniformity. We show that the synthesis of silicon nanocrystals in the plasma offers unique advantages with respect to deposition rate and film properties. In particular, this allows the production of films which are similar to polycrystalline thin films produced by furnace and laser crystallization. The growth process is also discussed with respect to TFT design: top gate or bottom gate. Results on bottom gate TFTs meeting all the necessary requirements in terms of mobility, ON/OFF ratio and stability required for AMOLED applications are also reported.

  10. Plasma deposited hydrogenated carbon on GaAs and InP

    NASA Technical Reports Server (NTRS)

    Warner, J. D.; Pouch, J. J.; Alterovitz, S. A.; Liu, D. C.; Lanford, W. A.

    1985-01-01

    The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cis XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.

  11. Proposal of New Precursors for Plasma-Enhanced Chemical Vapor Deposition of SiOCH Low-k Films with Plasma Damage Resistance

    NASA Astrophysics Data System (ADS)

    Yoshi Ohashi,; Nobuo Tajima,; Yonghua Xu,; Takeshi Kada,; Shuji Nagano,; Hideharu Shimizu,; Satoshi Hasaka,

    2010-05-01

    We propose new precursors for bulk low-k films with plasma damage resistance. Our newly designed precursors contain long-chain hydrocarbon groups such as i-butyl and n-propyl groups. Using these precursors, we successfully produced films containing Si-CH2-Si groups by plasma-enhanced chemical vapor deposition (PECVD). The plasma damage resistance of these films under NH3 plasma treatment was studied. It was found that the increase in the k-value (Δ k) is smaller in films with more Si-CH2-Si groups.

  12. Proposal of New Precursors for Plasma-Enhanced Chemical Vapor Deposition of SiOCH Low-k Films with Plasma Damage Resistance

    NASA Astrophysics Data System (ADS)

    Ohashi, Yoshi; Tajima, Nobuo; Xu, Yonghua; Kada, Takeshi; Nagano, Shuji; Shimizu, Hideharu; Hasaka, Satoshi

    2010-05-01

    We propose new precursors for bulk low-k films with plasma damage resistance. Our newly designed precursors contain long-chain hydrocarbon groups such as i-butyl and n-propyl groups. Using these precursors, we successfully produced films containing Si-CH2-Si groups by plasma-enhanced chemical vapor deposition (PECVD). The plasma damage resistance of these films under NH3 plasma treatment was studied. It was found that the increase in the k-value (Δk) is smaller in films with more Si-CH2-Si groups.

  13. Enhanced dielectric deposition on single-layer MoS2 with low damage using remote N2 plasma treatment.

    PubMed

    Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Tang, Gaofei; Lei, Jiacheng; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J

    2017-04-28

    Using remote N2 plasma treatment to promote dielectric deposition on the dangling-bond free MoS2 is explored for the first time. The N2 plasma induced damages are systematically studied by the defect-sensitive acoustic-phonon Raman of single-layer MoS2, with samples undergoing O2 plasma treatment as a comparison. O2 plasma treatment causes defects in MoS2 mainly by oxidizing MoS2 along the already defective sites (most likely the flake edges), which results in the layer oxidation of MoS2. In contrast, N2 plasma causes defects in MoS2 mainly by straining and mechanically distorting the MoS2 layers first. Owing to the relatively strong MoS2-substrate interaction and chemical inertness of MoS2 in N2 plasma, single-layer MoS2 shows great stability in N2 plasma and only stable point defects are introduced after long-duration N2 plasma exposure. Considering the enormous vulnerability of single-layer MoS2 in O2 plasma and the excellent stability of single-layer MoS2 in N2 plasma, the remote N2 plasma treatment shows great advantage as surface functionalization to promote dielectric deposition on single-layer MoS2.

  14. Fabrication of Nanosized Lanthanum Zirconate Powder and Deposition of Thermal Barrier Coating by Plasma Spray Process

    NASA Astrophysics Data System (ADS)

    Mishra, S. K.; Jagdeesh, N.; Pathak, L. C.

    2016-07-01

    The present manuscript discusses our findings on fabrication of nanosized lanthanum zirconate powder for thermal barrier coating application and its coating by plasma spray on nickel-based superalloy substrate. Single-phase La2Zr2O7 coating of thickness of the order of 45 µm on the Ni-Cr-Al bond coat coated Ni-based superalloy substrate was deposited by plasma spray process. The layers at the interface did not show spallation and inter diffusion was very less. The microstructure, interface, porosity, and mechanical properties of different layers are investigated. The lanthanum zirconate hardness and modulus were 10.5 and 277 GPa, respectively. The load depth curve for lanthanum zirconate showed good elastic recovery around 74%.

  15. MHD Modelling of Flow Phenomena during the Impulse Plasma Deposition Process

    SciTech Connect

    Rabinski, M.; Zdunek, K.

    2008-03-19

    The paper presents recent computational studies of plasma dynamics in a coaxial accelerator used in surface engineering for Impulse Plasma Deposition (IPD). In our earlier studies we proposed a schematic pattern of a discharge region and a physical model of dynamic phenomena in the IPD accelerator with a tubular external electrode. The simplified snow plow code of our previous studies assumes that all the swept up mass is compressed into an infinitely thin layer immediately behind the shock. In the presented work the complete two-dimensional two-fluid magnetohydrodynamic model has been applied to investigate the sweeping of the working gas by the moving layer as well as the details of phenomena that take place behind a current sheet.

  16. Computational modelling of discharges within the impulse plasma deposition accelerator with a gas valve

    NASA Astrophysics Data System (ADS)

    Rabiński, Marek; Choduń, Rafał; Nowakowska-Langier, Katarzyna; Zdunek, Krzysztof

    2014-05-01

    The paper presents computational studies of working medium dynamics during the impulse plasma deposition (IPD) process when the electric discharge in an interelectrode region is initiated by a gas introduced through a fast-acting valve. During the computational simulations the influence of different discharge parameters on the plasma dynamics was studied. The optimization of the device includes the calculation of the current sheath movement and the sensibility analysis of its dynamics to geometrical and operational parameters. It was found that gas injection can be considered as a useful tool in optimization of the coatings obtained with the IPD technique. Computer simulation results indicate the direction of changes in the development and application of the analysed surface engineering method.

  17. MHD Modelling of Flow Phenomena during the Impulse Plasma Deposition Process

    NASA Astrophysics Data System (ADS)

    Rabiński, M.; Zdunek, K.

    2008-03-01

    The paper presents recent computational studies of plasma dynamics in a coaxial accelerator used in surface engineering for Impulse Plasma Deposition (IPD). In our earlier studies we proposed a schematic pattern of a discharge region and a physical model of dynamic phenomena in the IPD accelerator with a tubular external electrode. The simplified snow plow code of our previous studies assumes that all the swept up mass is compressed into an infinitely thin layer immediately behind the shock. In the presented work the complete two-dimensional two-fluid magnetohydrodynamic model has been applied to investigate the sweeping of the working gas by the moving layer as well as the details of phenomena that take place behind a current sheet.

  18. Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition

    SciTech Connect

    Fujita, K.; Banno, K.; Aryal, H. R.; Egawa, T.

    2012-10-15

    Carbon layer has been grown on a Ni/SiO{sub 2}/Si(111) substrate under high vacuum pressure by pulse arc plasma deposition. From the results of Raman spectroscopy for the sample, it is found that graphene was formed by ex-situ annealing of sample grown at room temperature. Furthermore, for the sample grown at high temperature, graphene formation was shown and optimum temperature was around 1000 Degree-Sign C. Transmission electron microscopy observation of the sample suggests that the graphene was grown from step site caused by grain of Ni film. The results show that the pulse arc plasma technique has the possibility for acquiring homogenous graphene layer with controlled layer thickness.

  19. Single-electron devices fabricated using double-angle deposition and plasma oxidation

    NASA Astrophysics Data System (ADS)

    Hong, Y.; Barcikowski, Z. S.; Ramanayaka, A. N.; Stewart, M. D., Jr.; Zimmerman, N. M.; Pomeroy, J. M.; Quantum Processes; Metrology Group Team

    We report on development of plasma oxidized, single-electron transistors (SETs) where we seek low-capacitance and small-area Al/AlOx/Al tunnel junctions with small charge offset drift. Performance of metal-based SET quantum devices and superconducting devices has suffered from long-term charge offset drift, high defect densities and charge noise. We use plasma oxidation to lower defect densities of the oxide layer, and adjustable deposition angles to control the overlapping areas for Al/AlOx/Al tunnel junctions. Current-voltage and charge offset drift measurements are planned for cryogenic temperatures. Other electrical properties will be measured at room temperature. We hope to see Coulomb blockade oscillations on these devices and better charge offset stability than typical Al/AlOx/Al SETs.

  20. Properties of AlN films deposited by reactive ion-plasma sputtering

    SciTech Connect

    Bert, N. A.; Bondarev, A. D.; Zolotarev, V. V.; Kirilenko, D. A.; Lubyanskiy, Ya. V.; Lyutetskiy, A. V.; Slipchenko, S. O.; Petrunov, A. N.; Pikhtin, N. A. Ayusheva, K. R.; Arsentyev, I. N.; Tarasov, I. S.

    2015-10-15

    The properties of SiO{sub 2}, Al{sub 2}O{sub 3}, and AlN dielectric coatings deposited by reactive ion-plasma sputtering are studied. The refractive indices of the dielectric coatings are determined by optical ellipsometry. It is shown that aluminum nitride is the optimal material for achieving maximum illumination of the output mirror of a semiconductor laser. A crystalline phase with a hexagonal atomic lattice and oxygen content of up to 10 at % is found by transmission electron microscopy in the aluminum-nitride films. It is found that a decrease in the concentration of residual oxygen in the chamber of the reactive ion-plasma sputtering installation makes it possible to eliminate the appearance of vertical pores in the bulk of the aluminum-nitride film.

  1. Vacuum-vapor-deposited films based on benzo(a)phenoxazine derivatives under surface plasma fluorination

    NASA Astrophysics Data System (ADS)

    Agabekov, Vladimir E.; Ignasheva, Olga E.; Belyatsky, Vladimir N.

    1997-07-01

    Modification of vacuum vapor deposited thin films based on benzo(a)phenoxazone-5 derivatives with C3F8 and SF6 plasma were investigated. X-ray photoelectron spectroscopy (XPS) method was used to identify and study the distribution of surface functional groups of untreated and fluorinated films investigated. It was shown that fluor content in element composition of surface film layers and perfluorocarbon group content in Cls-lines of XP-spectra depended on chemical structure of the initial compounds. The more quantity and size of side substitutes were contained in the compound chemical structure the less was the content of fluor and perfluorocarbon groups in film surface fluorinated layer. The probable way of plasma active particle interaction with film surface is discussed. Using Kaelbe's method the influence of treatment conditions and initial compound chemical structure on surface properties of fluorinated films was studied.

  2. Low-Energy Plasma Spray (LEPS) Deposition of Hydroxyapatite/Poly-ɛ-Caprolactone Biocomposite Coatings

    NASA Astrophysics Data System (ADS)

    Garcia-Alonso, Diana; Parco, Maria; Stokes, Joseph; Looney, Lisa

    2012-01-01

    Thermal spraying is widely employed to deposit hydroxyapatite (HA) and HA-based biocomposites on hip and dental implants. For thick HA coatings (>150 μm), problems are generally associated with the build-up of residual stresses and lack of control of coating crystallinity. HA/polymer composite coatings are especially interesting to improve the pure HA coatings' mechanical properties. For instance, the polymer may help in releasing the residual stresses in the thick HA coatings. In addition, the selection of a bioresorbable polymer may enhance the coatings' biological behavior. However, there are major challenges associated with spraying ceramic and polymeric materials together because of their very different thermal properties. In this study, pure HA and HA/poly-ɛ-caprolactone (PCL) thick coatings were deposited without significant thermal degradation by low-energy plasma spraying (LEPS). PCL has never been processed by thermal spraying, and its processing is a major achievement of this study. The influence of selected process parameters on microstructure, composition, and mechanical properties of HA and HA/PCL coatings was studied using statistical design of experiments (DOE). The HA deposition rate was significantly increased by the addition of PCL. The average porosity of biocomposite coatings was slightly increased, while retaining or even improving in some cases their fracture toughness and microhardness. Surface roughness of biocomposites was enhanced compared with HA pure coatings. Cell culture experiments showed that murine osteoblast-like cells attach and proliferate well on HA/PCL biocomposite deposits.

  3. Structural and optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition.

    PubMed

    Prakash, G V; Daldosso, N; Degoli, E; Iacona, F; Cazzanelli, M; Gaburro, Z; Pucker, G; Dalba, P; Rocca, F; Ceretta Moreira, E; Franzò, G; Pacifici, D; Priolo, F; Arcangeli, C; Filonov, A B; Ossicini, S; Pavesi, L

    2001-06-01

    Silicon nanocrystals (Si-nc) embedded in SiO2 matrix have been prepared by high temperature thermal annealing (1000-1250 degrees C) of substoichiometric SiOx films deposited by plasma-enhanced chemical vapor deposition (PECVD). Different techniques have been used to examine the optical and structural properties of Si-nc. Transmission electron microscopy analysis shows the formation of nanocrystals whose sizes are dependent on annealing conditions and deposition parameters. The spectral positions of room temperature photoluminescence are systematically blue shifted with reduction in the size of Si-nc obtained by decreasing the annealing temperature or the Si content during the PECVD deposition. A similar trend has been found in optical absorption measurements. X-ray absorption fine structure measurements indicate the presence of an intermediate region between the Si-nc and the SiO2 matrix that participates in the light emission process. Theoretical observations reported here support these findings. All these efforts allow us to study the link between dimensionality, optical properties, and the local environment of Si-nc and the surrounding SiO2 matrix.

  4. Optimization of silicon oxynitrides by plasma-enhanced chemical vapor deposition for an interferometric biosensor

    NASA Astrophysics Data System (ADS)

    Choo, Sung Joong; Lee, Byung-Chul; Lee, Sang-Myung; Park, Jung Ho; Shin, Hyun-Joon

    2009-09-01

    In this paper, silicon oxynitride layers deposited with different plasma-enhanced chemical vapor deposition (PECVD) conditions were fabricated and optimized, in order to make an interferometric sensor for detecting biochemical reactions. For the optimization of PECVD silicon oxynitride layers, the influence of the N2O/SiH4 gas flow ratio was investigated. RF power in the PEVCD process was also adjusted under the optimized N2O/SiH4 gas flow ratio. The optimized silicon oxynitride layer was deposited with 15 W in chamber under 25/150 sccm of N2O/SiH4 gas flow rates. The clad layer was deposited with 20 W in chamber under 400/150 sccm of N2O/SiH4 gas flow condition. An integrated Mach-Zehnder interferometric biosensor based on optical waveguide technology was fabricated under the optimized PECVD conditions. The adsorption reaction between bovine serum albumin (BSA) and the silicon oxynitride surface was performed and verified with this device.

  5. Deposition of titanium nitride layers by electric arc - Reactive plasma spraying method

    NASA Astrophysics Data System (ADS)

    Şerban, Viorel-Aurel; Roşu, Radu Alexandru; Bucur, Alexandra Ioana; Pascu, Doru Romulus

    2013-01-01

    Titanium nitride (TiN) is a ceramic material which possesses high mechanical properties, being often used in order to cover cutting tools, thus increasing their lifetime, and also for covering components which are working in corrosive environments. The paper presents the experimental results on deposition of titanium nitride coatings by a new combined method (reactive plasma spraying and electric arc thermal spraying). In this way the advantages of each method in part are combined, obtaining improved quality coatings in the same time achieving high productivity. Commercially pure titanium wire and C45 steel as substrate were used for experiments. X-ray diffraction analysis shows that the deposited coatings are composed of titanium nitride (TiN, Ti2N) and small amounts of Ti3O. The microstructure of the deposited layers, investigated both by optical and scanning electron microscopy, shows that the coatings are dense, compact, without cracks and with low porosity. Vickers microhardness of the coatings presents maximum values of 912 HV0.1. The corrosion tests in 3%NaCl solution show that the deposited layers have a high corrosion resistance compared to unalloyed steel substrate.

  6. Effect of Low-Energy Ions on Plasma-Enhanced Deposition of Cubic Boron Nitride

    NASA Astrophysics Data System (ADS)

    Torigoe, M.; Fukui, S.; Teii, K.; Matsumoto, S.

    2015-09-01

    The effect of low-energy ions on deposition of cubic boron nitride (cBN) films in an inductively coupled plasma with the chemistry of fluorine is studied in terms of ion energy, ion flux, and ion to boron flux ratio onto the substrate. The ion energy and the ion to boron flux ratio are determined from the sheath potential and the ratio of incident ion flux to net deposited boron flux, respectively. For negative substrate biases where sp2-bonded BN phase only or no deposit is formed, both the ion energy and the ion to boron flux ratio are high. For positive substrate biases where cBN phase is formed, the ion energy and the ion to boron flux ratio are estimated in the range of a few eV to 35 eV and 100 to 130, respectively. The impact of negative ions is presumed to be negligible due to their low kinetic energy relative to the sheath potential over the substrate surface. The impact of positive ions with high ion to boron flux ratios is primarily responsible for reduction of the ion energy for cBN film deposition. Work supported in part by a Grant-in-Aid for Scientific Research (B), a Funding Program for Next Generation World-Leading Researchers, and an Industrial Technology Research Grant Program 2008.

  7. Large-Area, Plasma-Assisted, Halogen-Based Diamond Deposition

    DTIC Science & Technology

    1992-03-04

    DTIC AD-A247 423 TIC RESEARCH TRIANGLE INSTITUTE RTI/5123/91-92 Quarterly March 1992 LARGE-AREA, PLASMA-ASSISTED, HALOGEN-BASED DIAMOND DEPOSITION...Quarterly Report - First and Second Quarters R.A. Rudder R.J. Markunas M.J. Mantini G.C. Hudson Office of Naval Research Program No. N00014-91-C-0177...fir , : u ____ 92-06469 POST OFFICE BOX 12194 RESEARCH TRIANGLE PARK NORTH CAROLINA 27709 2194 REPORT DOCUMENT PAGE Form Approved )OMB No 0704

  8. Amorphous hollow carbon spheres synthesized using radio frequency plasma-enhanced chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Yang, G. M.; Xu, Q.; Tian, H. W.; Wang, X.; Zheng, W. T.

    2008-10-01

    We report a method to synthesize amorphous hollow carbon spheres, with diameters ranging from 100 to 800 nm, which are dispersed among bent graphitized carbon nanotubes using radio frequency plasma-enhanced chemical vapour deposition in mixed CH4/H2 gases. The products are characterized by techniques including scanning electron microscopy, energy-dispersive x-ray spectroscopy, Raman spectroscopy and transmission electron microscopy. It is found that MgO and Ni nanoparticles together with hydrogen play important roles in the formation of the spheres. A possible formation mechanism for the carbon composites has been proposed.

  9. The effect of diborane additive on the plasma-chemical properties of deposited carbon films

    NASA Astrophysics Data System (ADS)

    Shubina, E. N.; Karasev, P. A.; Titov, A. I.; Podsvirov, O. A.; Vinogradov, A. Ya.; Karasev, N. N.; Pozdnyakov, A. V.

    2017-01-01

    We present the results of studies of the optical, electrical, and mechanical properties of diamondlike carbon films prepared by plasma-chemical vapor deposition from a mixture of methane and diborane in various proportions. Upon reaching the threshold concentration ( 12%) of diborane in the mixture, inclusions of a new phase start to form in the structure of the films. This leads to nonlinear dependence of the interior stresses and the surface resistance of coatings on the composition of the mixture with minimum values corresponding to a diborane concentration of about 12%.

  10. Fabrication of transparent antifouling thin films with fractal structure by atmospheric pressure cold plasma deposition.

    PubMed

    Miyagawa, Hayato; Yamauchi, Koji; Kim, Yoon-Kee; Ogawa, Kazufumi; Yamaguchi, Kenzo; Suzaki, Yoshifumi

    2012-12-21

    Antifouling surface with both superhydrophobicity and oil-repellency has been fabricated on glass substrate by forming fractal microstructure(s). The fractal microstructure was constituted by transparent silica particles of 100 nm diameter and transparent zinc-oxide columns grown on silica particles by atmospheric pressure cold plasma deposition. The sample surface was coated with a chemically adsorbed monomolecular layer. We found that one sample has the superhydrophobic ability with a water droplet contact angle of more than 150°, while another sample has a high transmittance of more than 85% in a wavelength range from 400 to 800 nm.

  11. Structure of carbon nanotubes grown by microwave-plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Okai, M.; Muneyoshi, T.; Yaguchi, T.; Sasaki, S.

    2000-11-01

    Carbon nanotubes grown on a Ni substrate and an Fe-Ni-Cr alloy substrate by plasma-enhanced chemical vapor deposition were investigated by transmission electron microscope (TEM) and energy dispersive x-ray (EDX) analysis. TEM showed that the nanotubes on both substrates have a piled-cone structure with metal particles on top which determine the diameter of the nanotubes. Their diameter ranges from 60 to 80 nm. Moreover, EDX showed that the metal particles are composed of Ni when the nanotubes are grown on Ni substrate and of Fe and Ni in the case of the Fe-Ni-Cr alloy substrate.

  12. Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

    SciTech Connect

    Vitale, Steven A.; Wyatt, Peter W.; Hodson, Chris J.

    2012-01-15

    Atomic layer deposition (ALD) of high-quality gadolinium oxide thin films is achieved using Gd(iPrCp){sub 3} and O{sub 2} plasma. Gd{sub 2}O{sub 3} growth is observed from 150 to 350 deg. C, though the optical properties of the film improve at higher temperature. True layer-by-layer ALD growth of Gd{sub 2}O{sub 3} occurred in a relatively narrow window of temperature and precursor dose. A saturated growth rate of 1.4 A/cycle was observed at 250 deg. C. As the temperature increases, high-quality films are deposited, but the growth mechanism appears to become CVD-like, indicating the onset of precursor decomposition. At 250 deg. C, the refractive index of the film is stable at {approx}1.80 regardless of other deposition conditions, and the measured dispersion characteristics are comparable to those of bulk Gd{sub 2}O{sub 3}. XPS data show that the O/Gd ratio is oxygen deficient at 1.3, and that it is also very hygroscopic. The plasma etching rate of the ALD Gd{sub 2}O{sub 3} film in a high-density helicon reactor is very low. Little difference is observed in etching rate between Cl{sub 2} and pure Ar plasmas, suggesting that physical sputtering dominates the etching. A threshold bias power exists below which etching does not occur; thus it may be possible to etch a metal gate material and stop easily on the Gd{sub 2}O{sub 3} gate dielectric. The Gd{sub 2}O{sub 3} film has a dielectric constant of about 16, exhibits low C-V hysteresis, and allows a 50 x reduction in gate leakage compared to SiO{sub 2}. However, the plasma enhanced atomic layer deposition (PE-ALD) process causes formation of an {approx}1.8 nm SiO{sub 2} interfacial layer, and generates a fixed charge of -1.21 x 10{sup 12} cm{sup -2}, both of which may limit use of PE-ALD Gd{sub 2}O{sub 3} as a gate dielectric.

  13. High T(sub c) superconductors fabricated by plasma aerosol mist deposition technique

    NASA Technical Reports Server (NTRS)

    Wang, X. W.; Vuong, K. D.; Leone, A.; Shen, C. Q.; Williams, J.; Coy, M.

    1995-01-01

    We report new results on high T(sub c) superconductors fabricated by a plasma aerosol mist deposition technique, in atmospheric environment. Materials fabricated are YBaCuO, BiPbSrCaCuO, BaCaCuO precursor films for TlBaCaCuO, and other buffers such as YSZ. Depending on processing conditions, sizes of crystallites and/or particles are between dozens of nano-meters and several micrometers. Superconductive properties and other material characteristics can also be tailored.

  14. Interface Electronic State Characterization of Plasma Enhanced Atomic Layer Deposited Dielectrics on GaN

    NASA Astrophysics Data System (ADS)

    Yang, Jialing

    In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three interrelated issues are discussed in this study: (1) PEALD dielectric growth process optimization, (2) interface electronic structure of comparative PEALD dielectrics on GaN, and (3) interface electronic structure of PEALD dielectrics on Ga- and N-face GaN. The first study involved an in-depth case study of PEALD Al2O3 growth using dimethylaluminum isopropoxide, with a special focus on oxygen plasma effects. Saturated and self-limiting growth of Al2O3 films were obtained with an enhanced growth rate within the PEALD temperature window (25--220 °C). The properties of Al2O3 deposited at various temperatures were characterized to better understand the relation between the growth parameters and film properties. In the second study, the interface electronic structures of PEALD dielectrics on Ga-face GaN films were measured. Five promising dielectrics (Al2O3, HfO2, SiO2, La2O 3, and ZnO) with a range of band gap energies were chosen. Prior to dielectric growth, a combined wet chemical and in-situ H 2/N2 plasma clean process was employed to remove the carbon contamination and prepare the surface for dielectric deposition. The surface band bending and band offsets were measured by XPS and UPS for dielectrics on GaN. The trends of the experimental band offsets on GaN were related to the dielectric band gap energies. In addition, the experimental band offsets were near the calculated values based on the charge neutrality level model. The third study focused on the effect of the polarization bound charge of the Ga- and N-face GaN on interface electronic structures. A surface pretreatment process consisting of a NH4OH wet chemical and an in-situ NH3 plasma treatment was applied to remove carbon contamination, retain monolayer oxygen coverage, and

  15. Morphological evolution of self-deposition Bi2Se3 nanosheets by oxygen plasma treatment

    NASA Astrophysics Data System (ADS)

    Jia, Guozhi; Wu, Zengna; Wang, Peng; Yao, Jianghong; Chang, Kai

    2016-02-01

    Bi2Se3 nanosheets were successfully synthesized by a microwave-assisted approach in the presence of polyvinylpyrroli done at a temperature of 180 °C for 2 h. The thin film was prepared on a silicon wafer via a self-deposition process in a Bi2Se3 nanosheet ink solution using the evaporation-induced self-assembly method. The structure and morphology of the obtained products were characterized by X-ray diffraction, scanning electron microscopy (SEM), x-ray photoelectron spectroscopy, and Raman spectroscopy. The highly uniform Bi2Se3 particles could be formed by controlling the oxygen plasma treatment time. After the plasma pretreatment from 10 to 20 s, the surface of Bi2Se3 film evolved from the worm-like structure to particles. The highly uniform thin film was formed on further increasing the plasma treatment time, which is consistent with the observed SEM results. Several important processes can result in the morphological evolution of Bi2Se3 nanosheets: (1) formation of Bi2Se3 oxide layer; (2) self-assembly of oxide nanoparticles under the action of high-energy oxygen plasma; and (3) electrostatic interaction and etching mechanism.

  16. Vapors and Droplets Mixture Deposition of Metallic Coatings by Very Low Pressure Plasma Spraying

    NASA Astrophysics Data System (ADS)

    Vautherin, B.; Planche, M.-P.; Bolot, R.; Quet, A.; Bianchi, L.; Montavon, G.

    2014-04-01

    In recent years, the very low pressure plasma-spraying (VLPPS) process has been intensely developed and implemented to manufacture thin, dense and finely structured ceramic coatings for various applications, such as Y2O3 for diffusion barriers, among other examples. This paper aims at presenting developments carried out on metallic coatings. Aluminum was chosen as a demonstrative material due to its "moderate" vaporization enthalpy (i.e., 38.23 KJ cm-3) compared to the one of copper (i.e., 55.33 KJ cm-3), cobalt (i.e., 75.03 KJ cm-3), or even tantalum (i.e., 87.18 KJ cm-3). The objective of this work is primarily to better understand the behavior of a solid precursor injected into the plasma jet leading to the formation of vapors and to better control the factors affecting the coating structure. Nearly dense aluminum coatings were successfully deposited by VLPPS at 100 Pa with an intermediate power plasma torch (i.e., Sulzer Metco F4 type gun with maximum power of 45 kW). Optical emission spectroscopy (OES) was implemented to study and analyze the vapor behavior into the plasma jet. Simplified CFD modeling allowed better understanding of some of the thermo-physical mechanisms. The effect of powder-size distribution, substrate temperature and spray distance were studied. The phase composition and microstructural features of the coatings were characterized by XRD and SEM. Moreover, Vickers microhardness measurements were implemented.

  17. Magnetically controlled deposition of metals using gas plasma. Quarterly progress report, October--December 1996

    SciTech Connect

    1997-03-01

    Thin layers of secondary material are plated on substrates either by plating or spraying processes. Plating operations produce large amounts of hazardous liquid waste. Spraying, while one of the less waste intensive methods, produces {open_quotes}over spray{close_quotes} which is waste that is a result of uncontrolled nature of the spray stream. In many cases the over spray produces a hazardous waste. Spray coating is a mature process with many uses. Material can be deposited utilizing spraying technology in three basic ways: {open_quotes}Flame spraying{close_quotes}, direct spraying of molten metals and/or plasma spraying. This project is directed at controlling the plasma spraying process and thereby minimizing the waste generated in that process. The proposed process will utilize a standard plasma spray gunsmith the addition of magnetic fields to focus and control the plasma. In order to keep development cost at a minimum, the project was organized in phases. The first and current phase involves developing an analytical model that will prove the concept and be used to design a prototype. Analyzing the process and using the analysis has the potential to generate significant hardware cost savings.

  18. Magnetically controlled deposition of metals using gas plasma. Quarterly progress report, January 1997--March 1997

    SciTech Connect

    1997-05-01

    Thin layers of secondary material are plated on substrates either by plating or spraying processes. Plating operations produce large amounts of hazardous liquid waste. Spraying, while one of the less waste intensive methods, produces {open_quotes}over spray,{close_quotes} or waste that is a result of uncontrolled nature of the spray stream. In many cases the over spray may produce a hazardous waste, requiring special processing. Spray coating is a mature process with many uses. Material can be deposited utilizing spraying technology in three basic ways: {open_quotes}Flame spraying{close_quotes}, direct spraying of molten metals and/or plasma spraying. This project is directed at controlling the plasma spraying process and thereby minimizing the waste generated in that process. The proposed process will utilize a standard plasma spray gun with the addition of magnetic fields to focus and control the plasma. In order to keep development cost at a minimum, the project was organized in phases. The first and current phase involves developing an analytical model that will prove the concept and be used to design a prototype. Analyzing the process and using the analysis has the potential to generate significant hardware cost savings.

  19. Model of enhanced energy deposition in a Z-pinch plasma

    SciTech Connect

    Velikovich, A. L.; Davis, J.; Thornhill, J. W.; Giuliani, J. L. Jr.; Rudakov, L. I.; Deeney, C.

    2000-08-01

    In numerous experiments, magnetic energy coupled to strongly radiating Z-pinch plasmas exceeds the thermalized kinetic energy, sometimes by a factor of 2-3. An analytical model describing this additional energy deposition based on the concept of macroscopic magnetohydrodynamic (MHD) turbulent pinch heating proposed by Rudakov and Sudan [Phys. Reports 283, 253 (1997)] is presented. The pinch plasma is modeled as a foam-like medium saturated with toroidal ''magnetic bubbles'' produced by the development of surface m=0 Rayleigh-Taylor and MHD instabilities. As the bubbles converge to the pinch axis, their magnetic energy is converted to thermal energy of the plasma through pdV work. Explicit formulas for the average dissipation rate of this process and the corresponding contribution to the resistance of the load, which compare favorably to the experimental data and simulation results, are presented. The possibility of using this enhanced (relative to Ohmic heating) dissipation mechanism to power novel plasma radiation sources and produce high K-shell yields using long current rise time machines is discussed. (c) 2000 American Institute of Physics.

  20. Modeling of Sheath Ion-Molecule Reactions in Plasma Enhanced Chemical Vapor Deposition of Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Hash, David B.; Govindan, T. R.; Meyyappan, M.

    2004-01-01

    In many plasma simulations, ion-molecule reactions are modeled using ion energy independent reaction rate coefficients that are taken from low temperature selected-ion flow tube experiments. Only exothermic or nearly thermoneutral reactions are considered. This is appropriate for plasma applications such as high-density plasma sources in which sheaths are collisionless and ion temperatures 111 the bulk p!asma do not deviate significantly from the gas temperature. However, for applications at high pressure and large sheath voltages, this assumption does not hold as the sheaths are collisional and ions gain significant energy in the sheaths from Joule heating. Ion temperatures and thus reaction rates vary significantly across the discharge, and endothermic reactions become important in the sheaths. One such application is plasma enhanced chemical vapor deposition of carbon nanotubes in which dc discharges are struck at pressures between 1-20 Torr with applied voltages in the range of 500-700 V. The present work investigates The importance of the inclusion of ion energy dependent ion-molecule reaction rates and the role of collision induced dissociation in generating radicals from the feedstock used in carbon nanotube growth.

  1. Vapor phase reactions in polymerization plasma for divinylsiloxane-bis-benzocyclobutene film deposition

    SciTech Connect

    Kinoshita, Keizo; Nakano, Akinori; Kawahara, Jun; Kunimi, Nobutaka; Hayashi, Yoshihiro; Kiso, Osamu; Saito, Naoaki; Nakamura, Keiji; Kikkawa, Takamaro

    2006-11-15

    Vapor phase reactions in plasma polymerization of divinylsiloxane-bis-benzocyclobutene (DVS-BCB) low-k film depositions on 300 mm wafers were studied using mass spectrometry, in situ Fourier transform infrared, and a surface wave probe. Polymerization via Diels-Alder cycloaddition reaction was identified by the detection of the benzocyclohexene group. Hydrogen addition and methyl group desorption were also detected in DVS-BCB monomer and related large molecules. The dielectric constant k of plasma polymerized DVS-BCB with a plasma source power range up to 250 W was close to {approx}2.7 of thermally polymerized DVS-BCB, and increased gradually over 250 W. The electron density at 250 W was about 1.5x10{sup 10} cm{sup -3}. The increase of the k value at higher power was explained by the decrease of both large molecular species via multistep dissociation and incorporation of silica components into the polymer. It was found that the reduction of electron density as well as precursor residence time is important for the plasma polymerization process to prevent the excess dissociation of the precursor.

  2. In-situ monitoring of plasma ion assisted deposition (PIAD) processes

    NASA Astrophysics Data System (ADS)

    Harhausen, Jens; Foest, Rüdiger; Loffhagen, Detlef

    2015-09-01

    Present photonics applications depend on accurate production techniques. Plasma based processes might be termed the backbone of multilayer optical coatings which are the key components of dielectric mirrors, filters or antireflectives. However, the sector strongly relies on process recipies based on empirical optimization of thin film properties. Limitations in quality, repeatability and yield are faced. In this contribution results of efforts on plasma characterization of a beam source employed for PIAD are presented. Data on electron and ion kinetics as well as optical emission facilitated a comprehensive understanding of underlying physics of ion beam generation and propagation in an industrial type batch coater. In order to promote the development of next generation production plants, concepts for in-situ diagnostics are investigated. Results from monitoring of optical radiance of the plasma plume near the source and electron density near the substrates are discussed. The novel concept of the multipole resonance probe is applied during deposition in order to trace variations not only in magnitude of plasma density, but also its spatial distribution. Coating materials comprise TiO2, Ta2O5, Al2O3 and SiO2. Funded by the German Federal Ministry of Education and Research (BMBF) under Grant 13N13213).

  3. Hollow cathode sustained plasma microjets: Characterization and application to diamond deposition

    NASA Astrophysics Data System (ADS)

    Sankaran, R. Mohan; Giapis, Konstantinos P.

    2002-09-01

    Extending the principle of operation of hollow cathode microdischarges to a tube geometry has allowed the formation of stable, high-pressure plasma microjets in a variety of gases including Ar, He, and H2. Direct current discharges are ignited between stainless steel capillary tubes (d=178 mum) which are operated as the cathode and a metal grid or plate that serves as the anode. Argon plasma microjets can be sustained in ambient air with plasma voltages as low as 260 V for cathode-anode gaps of 0.5 mm. At larger operating voltage, this gap can be extended up to several millimeters. Using a heated molybdenum substrate as the anode, plasma microjets in CH4/H2 mixtures have been used to deposit diamond crystals and polycrystalline films. Micro-Raman spectroscopy of these films shows mainly sp3 carbon content with slight shifting of the diamond peak due to internal stresses. Optical emission spectroscopy of the discharges used in the diamond growth experiments confirms the presence of atomic hydrogen and CH radicals.

  4. Deposition of nanostructured photocatalytic zinc ferrite films using solution precursor plasma spraying

    SciTech Connect

    Dom, Rekha; Sivakumar, G.; Hebalkar, Neha Y.; Joshi, Shrikant V.; Borse, Pramod H.

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Highly economic solution precursor route capable of producing films/coating even for mass scale production. Black-Right-Pointing-Pointer Pure spinel phase ZnFe{sub 2}O{sub 4} porous, immobilized films deposited in single step. Black-Right-Pointing-Pointer Parameter optimization yields access to nanostructuring in SPPS method. Black-Right-Pointing-Pointer The ecofriendly immobilized ferrite films were active under solar radiation. Black-Right-Pointing-Pointer Such magnetic system display advantage w.r.t. recyclability after photocatalyst extraction. -- Abstract: Deposition of pure spinel phase, photocatalytic zinc ferrite films on SS-304 substrates by solution precursor plasma spraying (SPPS) has been demonstrated for the first time. Deposition parameters such as precursor solution pH, concentration, film thickness, plasma power and gun-substrate distance were found to control physico-chemical properties of the film, with respect to their crystallinity, phase purity, and morphology. Alkaline precursor conditions (7 < pH {<=} 10) were found to favor oxide film formation. The nanostructured films produced under optimized conditions, with 500 mM solution at pH {approx} 8.0, yielded pure cubic phase ZnFe{sub 2}O{sub 4} film. Very high/low precursor concentrations yielded mixed phase, less adherent, and highly inhomogeneous thin films. Desired spinel phase was achieved in as-deposited condition under appropriately controlled spray conditions and exhibited a band gap of {approx}1.9 eV. The highly porous nature of the films favored its photocatalytic performance as indicated by methylene blue de-coloration under solar radiation. These immobilized films display good potential for visible light photocatalytic applications.

  5. Microwave plasma assisted chemical vapor deposition of ultra-nanocrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Huang, Wen-Shin

    Microwave plasma assisted ultra-nanocrystalline diamond film deposition was investigated using hydrogen deficient, carbon containing argon plasma chemistries with MSU-developed microwave plasma reactors. Ultra-nanocrystalline diamond film deposition on mechanically scratched silicon wafers was experimentally explored over the following input variables: (1) pressure: 60--240Torr, (2) total gas flow rate: 101--642 sccm, (3) input microwave power 732--1518W, (4) substrate temperature: 500°C--770°C, (5) deposition time: 2--48 hours, and (6) N2 impurities 5--2500 ppm. H2 concentrations were less than 9%, while CH 4 concentration was 0.17--1.85%. It was desired to grow films uniformly over 3″ diameter substrates and to minimize the grain size. Large, uniform, intense, and greenish-white discharges were sustained in contact with three inch silicon substrates over a 60--240 Torr pressure regime. At a given operating pressure, film uniformity was controlled by adjusting substrate holder geometry, substrate position, input microwave power, gas chemistries, and total gas flow rates. Film ultra-nanocrystallinity and smoothness required high purity deposition conditions. Uniform ultra-nanocrystalline films were synthesized in low leak-rate system with crystal sizes ranging from 3--30 nm. Films with 11--50 nm RMS roughness and respective thickness values of 1--23 mum were synthesized over 3″ wafers under a wide range of different deposition conditions. Film RMS roughness 7 nm was synthesized with thickness of 430 nm. Film uniformities of almost 100% were achieved over three inch silicon wafers. UV Raman and XRD characterization results indicated the presence of diamond in the synthesized films. Optical Emission Spectroscopy measurements showed that the discharge gas temperature was in excess of 2000 K. The synthesized films are uniformly smooth and the as grown ultra-nanocrystalline diamond can be used for a high frequency SAW device substrate material. IR measurements

  6. Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth

    SciTech Connect

    Muneshwar, Triratna Cadien, Ken

    2015-11-15

    Atomic layer deposition (ALD) relies on a sequence of self-limiting surface reactions for thin film growth. The effect of non-ALD side reactions, from insufficient purging between pulses and from precursor self-decomposition, on film growth is well known. In this article, precursor condensation within an ALD valve is described, and the effect of the continuous precursor source from condensate evaporation on ALD growth is discussed. The influence of the ALD valve temperature on growth and electrical resistivity of ZrN plasma enhanced ALD (PEALD) films is reported. Increasing ALD valve temperature from 75 to 95 °C, with other process parameters being identical, decreased both the growth per cycle and electrical resistivity (ρ) of ZrN PEALD films from 0.10 to 0.07 nm/cycle and from 560 to 350 μΩ cm, respectively. Our results show that the non-ALD growth resulting from condensate accumulation is eliminated at valve temperatures close to the pressure corrected boiling point of precursor.

  7. Photocatalytic Functional Coating of TiO2 Thin Film Deposited by Cyclic Plasma Chemical Vapor Deposition at Atmospheric Pressure

    NASA Astrophysics Data System (ADS)

    Kwon, Jung-Dae; Rha, Jong-Joo; Nam, Kee-Seok; Park, Jin-Seong

    2011-08-01

    Photocatalytic TiO2 thin films were prepared with titanium tetraisopropoxide (TTIP) using cyclic plasma chemical vapor deposition (CPCVD) at atmospheric pressure. The CPCVD TiO2 films contain carbon-free impurities up to 100 °C and polycrystalline anatase phases up to 200 °C, due to the radicals and ion-bombardments. The CPCVD TiO2 films have high transparency in the visible wavelength region and absorb wavelengths below 400 nm (>3.2 eV). The photocatalytic effects of the CPCVD TiO2 and commercial sprayed TiO2 films were measured by decomposing methylene blue (MB) solution under UV irradiation. The smooth CPCVD TiO2 films showed a relatively lower photocatalytic efficiency, but superior catalyst-recycling efficiency, due to their high adhesion strength on the substrates. This CPCVD technique may provide the means to produce photocatalytic thin films with low cost and high efficiency, which would be a reasonable candidate for practical photocatalytic applications, because of the reliability and stability of their photocatalytic efficiency in a practical environment.

  8. Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby

    DOEpatents

    Zhang, Ji-Guang; Tracy, C. Edwin; Benson, David K.; Turner, John A.; Liu, Ping

    2000-01-01

    A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

  9. Low-Temperature Silicon Epitaxy by Remote, Plasma - Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Habermehl, Scott Dwight

    The dynamics of low temperature Si homoepitaxial and heteroepitaxial growth, by remote plasma enhanced chemical vapor deposition, RPECVD, have been investigated. For the critical step of pre-deposition surface preparation of Si(100) surfaces, the attributes of remote plasma generated atomic H are compared to results obtained with a rapid thermal desorption, RTD, technique and a hybrid H-plasma/RTD technique. Auger electron spectroscopy, AES, and electron diffraction analysis indicate the hybrid technique to be very effective at surface passivation, while the RTD process promotes the formation of SiC precipitates, which induce defective epitaxial growth. For GaP and GaAs substrates, the use of atomic H exposure is investigated as a surface passivation technique. AES shows this technique to be effective at producing atomically clean surfaces. For processing at 400^circrm C, the GaAs(100) surface is observed to reconstruct to a c(8 x 2)Ga symmetry while, at 530^ circrm C the vicinal GaP(100) surface, miscut 10^circ , is observed to reconstruct to a (1 x n) type symmetry; an unreconstructed (1 x 1) symmetry is observed for GaP(111). Differences in the efficiency with which native oxides are removed from the surface are attributed to variations in the local atomic bonding order of group V oxides. The microstructure of homoepitaxial Si films, deposited at temperatures of 25-450^circ rm C and pressures of 50-500 mTorr, is catalogued. Optimized conditions for the deposition of low defect, single crystal films are identified. The existence of two pressure dependent regimes for process activation are observed. In-situ mass spectral analysis indicates that the plasma afterglow is dominated by monosilane ions below 200 mTorr, while above 200 mTorr, low mass rm H_{x} ^+ (x = 1,2,3) and rm HHe^+ ions dominate. Consideration of the growth rate data indicates that downstream dissociative silane ionization, in the lower pressure regime, is responsible for an enhanced surface H

  10. Experimental study of fractal clusters formation from nanoparticles synthesized by atmospheric pressure plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Mishin, Maxim V.; Protopopova, Vera S.; Alexandrov, Sergey E.

    2014-11-01

    This paper presents the experimental results from the fractal structures formation from nanoparticles of silicone dioxide deposited on the silicon substrate surface. Nanoparticles are synthesized by atmospheric pressure plasma-enhanced chemical vapor deposition with the use of capacitively coupled radio frequency (13.56 MHz) discharge sustained in helium atmosphere. Tetraethoxysilane is chosen as the test precursor. Correlation between the morphology of obtained deposits and the process parameters is found. The capability of nanoparticles movement along the deposit surface in local near-surface electric field is demonstrated. The empirical model that satisfactorily explained the mechanism of fractal clusters formation from nanoparticles on the substrate surface is developed. The model indicates that the dynamics of deposit morphology variations is determined by two competing processes: electrical charge transfer by nanoparticles to the deposit surface and electrical charge running off over the surface under conditions of changeable conductivity of the deposit surface.

  11. New insights on the effect of hydrogen to tungsten hexafluoride partial pressure ratio on plasma deposited tungsten thin films

    NASA Astrophysics Data System (ADS)

    Kim, Yong Tae; Hong, Jong Sung; Min, Suk-Ki

    1991-12-01

    Resistivities of tungsten thin films deposited by plasma enhanced chemical vapor deposition are very sensitive to the H2/WF6 partial pressure ratio, while the resistivities of tungsten films deposited by low pressure chemical vapor deposition are insensitive to the H2/WF6 ratio. The reason is investigated with x-ray diffraction, transmission electron microscopy, Auger electron spectroscopy and optical emission spectroscopy. As a result, when the H2/WF6 partial pressure ratio is higher than 15, plasma deposited tungsten has a low resistive (11 μΩ cm) bcc structure without F impurities. However, if the H2/WF6 ratios are decreased, porous and β-phase W films are formed due to the incomplete reduction of F concentrations.

  12. Effects of plasma-enhanced chemical vapor deposition (PECVD) on the carrier lifetime of Al2O3 passivation stack

    NASA Astrophysics Data System (ADS)

    Cho, Kuk-Hyun; Cho, Young Joon; Chang, Hyo Sik; Kim, Kyung-Joong; Song, Hee Eun

    2015-09-01

    We investigated the effect on the minority carrier lifetime of atomic layer deposition (ALD) Al2O3 passivation by a plasma-enhanced chemical vapor deposition (PECVD) SiON layer in Si/Al2O3/SiON-passivated structure. The lifetime variation of the Al2O3/SiON stack layer was found to depend on both the plasma power and the deposition temperature during the PECVD SiON process and to show better thermal stability than the Al2O3/SiNx:H stack under the same deposition conditions. The lifetime after a high-temperature firing process was improved dramatically at the PECVD deposition temperature of 200 °C. Our results provide a significant clue to reason for the improvement of the passivation performance for passivated emitter and rear contact (PERC) silicon solar cells.

  13. Enhancement of physical properties of indium tin oxide deposited by super density arc plasma ion plating by O 2 plasma treatment

    NASA Astrophysics Data System (ADS)

    Kim, Soo Young; Hong, Kihyon; Lee, Jong-Lam; Choi, Kyu Han; Song, Kyu Ho; Ahn, Kyung Chul

    2008-01-01

    Indium tin oxide (ITO) films were deposited on glass by super density arc plasma ion plating (SDAP-IP) method. In X-ray diffraction profiles, no obvious changes were found after O 2 plasma treatment. The transmittance, roughness, X-ray diffraction pattern, and sheet resistance also negligibly changed with O 2 plasma treatment. However, the water contact angle decreased with the O 2 plasma treatment, suggesting the increase of cohesive force between SDAP-IP ITO and organic materials. Synchrotron radiation photoemission spectroscopy showed that O 2 plasma treatment resulted in an increase of SDAP-IP ITO work function. Incorporation of oxygen atoms near the SDAP-IP ITO surface during the O 2 plasma treatment induced a peroxidic ITO surface, increasing the work function.

  14. In situ process diagnostics of silane plasma for device-quality a-Si:H deposition

    NASA Astrophysics Data System (ADS)

    Shing, Y. H.; Perry, J. W.; Hermann, A. M.

    Coherent anti-Stokes Raman spectroscopy (CARS) and mass spectrometry (MS) have been applied to in situ process diagnostics of a silane plasma for device-quality a-Si:H film deposition. Silane depletion was directly measured by CARS and is linearly dependent on RF power in the region of 4-12 W with a slope of 0.5 percent/mW-sq cm. The depletion is also dependent on SiH4 flow rate starting with a 50 percent depletion at a low flow rate of 5.6 sccm and asymptotically approaching an 8 percent depletion at a flow rate of 80 sccm. The mass spectral line signal intensity of disilane increases with RF power and shows an apparent transition at 6 W. Disilane formation in silane plasma, film deposition rate, and silane depletion ratio as a function of the RF power indicate that the film growth mechanism in the low-power region of 3.5-6.5 W is substantially different from that in the high-power region of 6.5-12 W.

  15. Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/ silicon dioxide waveguides.

    PubMed

    Ikeda, Kazuhiro; Saperstein, Robert E; Alic, Nikola; Fainman, Yeshaiahu

    2008-08-18

    We introduce and present experimental evaluations of loss and nonlinear optical response in a waveguide and an optical resonator, both implemented with a silicon nitride/ silicon dioxide material platform prepared by plasma-enhanced chemical vapor deposition with dual frequency reactors that significantly reduce the stress and the consequent loss of the devices. We measure a relatively small loss of approximately 4dB/cm in the waveguides. The fabricated ring resonators in add-drop and all-pass arrangements demonstrate quality factors of Q=12,900 and 35,600. The resonators are used to measure both the thermal and ultrafast Kerr nonlinearities. The measured thermal nonlinearity is larger than expected, which is attributed to slower heat dissipation in the plasma-deposited silicon dioxide film. The n2 for silicon nitride that is unknown in the literature is measured, for the first time, as 2.4 x 10(-15)cm(2)/W, which is 10 times larger than that for silicon dioxide.

  16. Development of dielectric barrier discharge plasma processing apparatus for mass spectrometry and thin film deposition

    SciTech Connect

    Majumdar, Abhijit; Hippler, Rainer

    2007-07-15

    Cost effective and a very simple dielectric barrier discharge plasma processing apparatus for thin film deposition and mass spectroscopic analysis of organic gas mixture has been described. The interesting features of the apparatus are the construction of the dielectric electrodes made of aluminum oxide or alumina (Al{sub 2}O{sub 3}) and glass and the generation of high ignition voltage from the spark plug transformer taken from car. Metal capacitor is introduced in between ground and oscilloscope to measure the executing power during the discharge and the average electron density in the plasma region. The organic polymer films have been deposited on Si (100) substrate using several organic gas compositions. The experimental setup provides a unique drainage system from the reaction chamber controlled by a membrane pump to suck out and remove the poisonous gases or residuals (cyanogens, H-CN, CH{sub x}NH{sub 2}, etc.) which have been produced during the discharge of CH{sub 4}/N{sub 2} mixture.

  17. Plasma assisted deposition of single and multistacked TiO2 hierarchical nanotube photoanodes.

    PubMed

    Nicolas Filippin, A; Sanchez-Valencia, Juan R; Idígoras, Jesús; Rojas, T Cristina; Barranco, Angel; Anta, Juan A; Borras, Ana

    2017-04-13

    We present herein an evolved methodology for the growth of nanocrystalline hierarchical nanotubes combining physical vapor deposition of organic nanowires (ONWs) and plasma enhanced chemical vacuum deposition of anatase TiO2 layers. The ONWs act as vacuum removable 1D and 3D templates, with the whole process occurring at temperatures ranging from RT to 250 °C. As a result, a high density of hierarchical nanotubes with tunable diameter, length and tailored wall microstructures are formed on a variety of processable substrates as metal and metal oxide films or nanoparticles including transparent conductive oxides. The reiteration of the process leads to the development of an unprecedented 3D nanoarchitecture formed by stacking the layers of hierarchical TiO2 nanotubes. As a proof of concept, we present the superior performance of the 3D nanoarchitecture as a photoanode within an excitonic solar cell with efficiencies as high as 4.69% for a nominal thickness of the anatase layer below 2.75 μm. Mechanical stability and straightforward implementation in devices are demonstrated at the same time. The process is extendable to other functional oxides fabricated by plasma-assisted methods with readily available applications in energy harvesting and storage, catalysis and nanosensing.

  18. Growth and characterization of radio-frequency plasma deposited gold-carbon composites

    NASA Astrophysics Data System (ADS)

    Flouttard, J. L.; Akinnifesi, J.; Cambril, E.; Despax, B.

    1991-07-01

    Gold-hydrocarbon composite thin films with various metal volume fractions have been deposited by a combination of sputtering and plasma deposition in argon-propane plasma. Partial pressure control and optical spectroscopy of the gas phase have shown the growth processes to be partially dependent on the chemical reactions occurring on the substrate. The polymer matrix structure was analyzed by several techniques and found to consist of dense hydrocarbon with a density of 1.7. For low metal volume fractions, optical spectra of films show that the dielectric nature of the polymer predominates while the metallic phase governs the absorption phenomenon for gold-rich films. Electrical conductivity measurements have revealed the influence of graphitic structures in the film just above a metal volume fraction p=0.03, below which carbon-carbon sp2 bonds are more predominant. Similarly the percolation threshold has been found to occur at about p=0.3 and the conductivity exponent is evaluated at 1.55.

  19. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NASA Astrophysics Data System (ADS)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics. The PECVD technology is inherently multiscale, from macroscale processes in the chemical reactor to atomic-scale surface chemistry. Our macroscale model is based on Navier-Stokes equations for a transient laminar flow of a compressible chemically reacting gas mixture, together with the mass transfer and energy balance equations, Poisson equation for electric potential, electrons and ions balance equations. The chemical kinetics model includes 24 species and 58 reactions: 37 in the gas phase and 21 on the surface. A deposition model consists of three stages: adsorption to the surface, diffusion along the surface and embedding of products into the substrate. A new model has been validated on experimental results obtained with the "Plasmalab System 100" reactor. We present the mathematical model and simulation results investigating the influence of flow rate and source gas proportion on silicon nitride film growth rate and chemical composition.

  20. Characterization and performance of carbon films deposited by plasma and ion beam based techniques

    SciTech Connect

    Walter, K C; Kung, H; Levine, T

    1994-12-31

    Plasma and ion beam based techniques have been used to deposit carbon-based films. The ion beam based method, a cathodic arc process, used a magnetically mass analyzed beam and is inherently a line-of-sight process. Two hydrocarbon plasma-based, non-line-of-sight techniques were also used and have the advantage of being capable of coating complicated geometries. The self-bias technique can produce hard carbon films, but is dependent on rf power and the surface area of the target. The pulsed-bias technique can also produce hard carbon films but has the additional advantage of being independent of rf power and target surface area. Tribological results indicated the coefficient of friction is nearly the same for carbon films from each deposition process, but the wear rate of the cathodic arc film was five times less than for the self-bias or pulsed-bias films. Although the cathodic arc film was the hardest, contained the highest fraction of sp{sup 3} bonds and exhibited the lowest wear rate, the cathodic arc film also produced the highest wear on the 440C stainless steel counterface during tribological testing. Thus, for tribological applications requiring low wear rates for both counterfaces, coating one surface with a very hard, wear resistant film may detrimentally affect the tribological behavior of the counterface.

  1. Effect of hydrogen addition on the deposition of titanium nitride thin films in nitrogen added argon magnetron plasma

    NASA Astrophysics Data System (ADS)

    Saikia, P.; Bhuyan, H.; Diaz-Droguett, D. E.; Guzman, F.; Mändl, S.; Saikia, B. K.; Favre, M.; Maze, J. R.; Wyndham, E.

    2016-06-01

    The properties and performance of thin films deposited by plasma assisted processes are closely related to their manufacturing techniques and processes. The objective of the current study is to investigate the modification of plasma parameters occurring during hydrogen addition in N2  +  Ar magnetron plasma used for titanium nitride thin film deposition, and to correlate the measured properties of the deposited thin film with the bulk plasma parameters of the magnetron discharge. From the Langmuir probe measurements, it was observed that the addition of hydrogen led to a decrease of electron density from 8.6 to 6.2  ×  (1014 m-3) and a corresponding increase of electron temperature from 6.30 to 6.74 eV. The optical emission spectroscopy study reveals that with addition of hydrogen, the density of argon ions decreases. The various positive ion species involving hydrogen are found to increase with increase of hydrogen partial pressure in the chamber. The thin films deposited were characterized using standard surface diagnostic tools such as x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), x-ray diffraction (XRD), Raman spectroscopy (RS), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS). Although it was possible to deposit thin films of titanium nitride with hydrogen addition in nitrogen added argon magnetron plasma, the quality of the thin films deteriorates with higher hydrogen partial pressures.

  2. Characterization and protein-adsorption behavior of deposited organic thin film onto titanium by plasma polymerization with hexamethyldisiloxane.

    PubMed

    Hayakawa, Tohru; Yoshinari, Masao; Nemoto, Kimiya

    2004-01-01

    Plasma polymerized hexamethyldisiloxane (HMDSO) thin film was deposited onto titanium using a radio-frequency apparatus for the surface modification of titanium. A titanium disk was first polished using colloidal silica at pH=9.8. Plasma-polymerized HMDSO films were firmly attached to the titanium by heating the titanium to a temperature of approximately 250 degrees C. The thickness of the deposited film was 0.07-0.35mum after 10-60min of plasma polymerization. The contact angle with respect to double distilled water significantly increased after HMDSO coating. X-ray photoelectron spectroscopy revealed that the deposited thin film consisted of Si, C, and O atoms. No Ti peaks were observed on the deposited surface. The deposited HMDSO film was stable during 2-weeks immersion in phosphate buffer saline solution. Fourier transform reflection-absorption spectroscopy showed the formation of Si-H, Si-C, C-H, and Cz.dbnd6;O bonds in addition to Si-O-Si bonds. Quartz crystal microbalance-dissipation measurement demonstrated that the deposition of HMDSO thin films on titanium has a benefit for fibronectin adsorption at the early stage. In conclusion, plasma polymerization is a promising technique for the surface modification of titanium. HMDSO-coated titanium has potential application as a dental implant material.

  3. Organo-Chlorinated Thin Films Deposited by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition for Adhesion Enhancement between Rubber and Zinc-Plated Steel Monofilaments.

    PubMed

    Vandenabeele, Cédric; Bulou, Simon; Maurau, Rémy; Siffer, Frederic; Belmonte, Thierry; Choquet, Patrick

    2015-07-08

    A continuous-flow plasma process working at atmospheric pressure is developed to enhance the adhesion between a rubber compound and a zinc-plated steel monofilament, with the long-term objective to find a potential alternative to the electrolytic brass plating process, which is currently used in tire industry. For this purpose, a highly efficient tubular dielectric barrier discharge reactor is built to allow the continuous treatment of "endless" cylindrical substrates. The best treatment conditions found regarding adhesion are Ar/O2 plasma pretreatment, followed by the deposition from dichloromethane of a 75 nm-thick organo-chlorinated plasma polymerized thin film. Ar/O2 pretreatment allows the removal of organic residues, coming from drawing lubricants, and induces external growth of zinc oxide. The plasma layer has to be preferably deposited at low power to conserve sufficient hydrocarbon moieties. Surface analyses reveal the complex chemical mechanism behind the establishment of strong adhesion levels, more than five times higher after the plasma treatment. During the vulcanization step, superficial ZnO reacts with the chlorinated species of the thin film and is converted into porous and granular bump-shaped ZnwOxHyClz nanostructures. Together, rubber additives diffuse through the plasma layer and lead to the formation of zinc sulfide on the substrate surface. Hence, two distinct interfaces, rubber/thin film and thin film/substrate, are established. On the basis of these observations, hypotheses explaining the high bonding strength results are formulated.

  4. Effect of process parameters on the mechanical properties of carbon nitride thin films synthesized by plasma assisted pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Tabbal, M.; Mérel, P.; Chaker, M.

    We present an investigation of the effect of the process parameters, namely deposition pressure and laser intensity, on the growth and mechanical properties of carbon nitride (CNx) thin films synthesized by plasma assisted pulsed laser deposition. Deposition at high remote plasma pressure (200 mTorr) enhances both growth rate and nitrogen incorporation (up to 40 at.%), but nano-indentation measurements indicate that these films are very soft and have poor mechanical properties. At low remote plasma pressure (0.5 mTorr), the nitrogen content varies from 24 to 16 at.% with increasing laser intensity as the films become much harder and more elastic, with hardness and Young's modulus values reaching 24 GPa and 230 GPa, respectively. These effects are explained in terms of a thermalization of the laser plasma at 200 mTorr and indicate that plasma activation of nitrogen does not provide any particular benefit to the film properties when deposition is performed at high pressure. However, at low pressure, the benefit of plasma activation is evidenced through enhanced nitrogen incorporation in the films while preserving the highly energetic species in the ablation plume. Such conditions lead to the synthesis, at room temperature, of hard and elastic films having properties close to those of fullerene-like CNx.

  5. Surface Modification of Conventional Polymers by Depositing Plasma Polymers of Trimethylsilane and of Trimethylsilane + O2.

    PubMed

    Weikart; Miyama; Yasuda

    1999-03-01

    The static wetting properties of TMS (trimethylsilane) and TMS + O2 plasma deposited films on eleven low energy conventional polymers were investigated using the sessile droplet method. The static advancing contact angle is an excellent indication of the change in surface state properties from plasma surface modification. However, traditional contact angle measuring techniques possess a methodological limitation, which can leave a water droplet on the substrate surface for up to 3 min before a measurement is obtained. The static "advancing" contact angles of different size water droplets on teflon and nylon surfaces were observed to change significantly in 2 min while equilibrating with the surface and surroundings. A new quick image-capturing device enables static contact angle measurement 2 to 4 s after contact with the substrate. This technique virtually eliminates the time dependent effects of evaporation and surface state change, which are believed to be responsible for the change in static advancing contact angles. Furthermore, static contact angles independent of droplet volume and contact time may be taken as a surface characteristic property, which is denoted as the intrinsic static contact angle, θS. The static "advancing" contact angle, measured in this fashion, indicated that the wetting properties of TMS and TMS + O2 plasma polymer deposition on 10 conventional polymers were modified virtually independent of the underlying substrate. The average advancing contact angles on TMS and TMS + O2 modified polymers are θS = 94 +/- 2.2 (cos θS = -0.0645) and θS = 32 +/- 6.9 (cos θS = 0.8452), respectively. Copyright 1999 Academic Press.

  6. Preparation Of Electrochromic Metal Oxide Films By Plasma-Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Benson, D. K.; Tracy, C. E.; Svensson, J. S. E. M.; Liebert, B. E.

    1987-11-01

    Laboratory procedures have been developed for depositing thin films of electrochromic metal oxides by plasma-enhanced chemical vapor deposition (PE-CVD). In this process, vapor phase reactants, such as tungsten hexafluotIde, are mixed with oxygen and excited by RF energy at a frequency of 13.56 MHz and power levels up to≍1W/cm2 substrate area. Large rates of oxide deposition have been achieved (> 8 nm/s) making this process a candidate for high-speed coating of large area substrates, such as window glass. Amorphous WO1 films prepared by PE-CVD have been shown to have electrochromic responses virtually identical to films prepared by vacuum evaporation. The lithium ion diffusion rate, for example, is approximately 1.3 x 10-11 cm2 /s at x = 0.03 in LixWO3 prepared by PE-CVD. On the other hand, molybdenum oxide films and mixed molybdenum/tungsten oxide films prepared by PE-CVD from the hexafluorides differ markedly from vacuum evaporated films. Their electrochromic responses are spectrally different and are much slower. Lithium ion diffusion rates in such Mo03 films are lower by about three orders of magnitude. These differences are tentatively attributed to a large fraction of fluorine (Mo:F ratios of the order of 2:1) which are incorporated into the molybdenum and mixed oxides, but are not incorporated into the tungsten oxides.

  7. Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

    SciTech Connect

    Altuntas, Halit E-mail: biyikli@unam.bilkent.edu.tr; Ozgit-Akgun, Cagla; Donmez, Inci; Biyikli, Necmi E-mail: biyikli@unam.bilkent.edu.tr

    2015-04-21

    Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200 °C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.2–21.5 MV/m), Schottky emission (23.6–39.5 MV/m), Frenkel-Poole emission (63.8–211.8 MV/m), trap-assisted tunneling (226–280 MV/m), and Fowler-Nordheim tunneling (290–447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements.

  8. Wettability of modified silica layers deposited on glass support activated by plasma

    NASA Astrophysics Data System (ADS)

    Terpiłowski, Konrad; Rymuszka, Diana; Goncharuk, Olena V.; Sulym, Iryna Ya.; Gun'ko, Vladimir M.

    2015-10-01

    Fumed silica modified by hexamethyldisilazane [HDMS] and polydimethylsiloxane [PDMS] was dispersed in a polystyrene/chloroform solution. To increase adhesion between deposited silica layers and a glass surface, the latter was pretreated with air plasma for 30 s. The silica/polystyrene dispersion was deposited on the glass support using a spin coater. After deposition, the plates were dried in a desiccator for 24 h. Water advancing and receding contact angles were measured using the tilted plate method. The apparent surface free energy (γS) was evaluated using the contact angle hysteresis approach. The surface topography was determined using the optical profilometry method. Contact angles changed from 59.7° ± 4.4 (at surface coverage with trimethylsilyl groups Θ = 0.14) to 155° ± 3.1 at Θ = 1. The value of γS decreased from 51.3 ± 2.8 mJ/m2 (for the sample at the lowest value of Θ) to 1.0 ± 0.4 mJ/m2 for the most hydrophobic sample. Thus, some systems with a high degree of modification by HDMS showed superhydrophobicity, and the sliding angle amounted to about 16° ± 2.1.

  9. Surface modification of silicon-containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Jin, Yoonyoung; Desta, Yohannes; Goettert, Jost; Lee, G. S.; Ajmera, P. K.

    2005-07-01

    Surface modification of silicon-containing fluorocarbon (SiCF) films achieved by wet chemical treatments and through x-ray irradiation is examined. The SiCF films were prepared by plasma-enhanced chemical vapor deposition, using gas precursors of tetrafluoromethane and disilane. As-deposited SiCF film composition was analyzed by x-ray photoelectron spectroscopy. Surface modification of SiCF films utilizing n-lithiodiaminoethane wet chemical treatment is discussed. Sessile water-drop contact angle changed from 95°+/-2° before treatment to 32°+/-2° after treatment, indicating a change in the film surface characteristics from hydrophobic to hydrophilic. For x-ray irradiation on the SiCF film with a dose of 27.4 kJ/cm3, the contact angle of the sessile water drop changed from 95°+/-2° before radiation to 39°+/-3° after x-ray exposure. The effect of x-ray exposure on chemical bond structure of SiCF films is studied using Fourier transform infrared measurements. Electroless Cu deposition was performed to test the applicability of the surface modified films. The x-ray irradiation method offers a unique advantage in making possible surface modification in a localized area of high-aspect-ratio microstructures. Fabrication of a Ti-membrane x-ray mask is introduced here for selective surface modification using x-ray irradiation.

  10. Functional metal oxide coatings by molecule-based thermal and plasma chemical vapor deposition techniques.

    PubMed

    Mathur, S; Ruegamer, T; Donia, N; Shen, H

    2008-05-01

    Deposition of thin films through vaccum processes plays an important role in industrial processing of decorative and functional coatings. Many metal oxides have been prepared as thin films using different techniques, however obtaining compositionally uniform phases with a control over grain size and distribution remains an enduring challenge. The difficulties are largely related to complex compositions of functional oxide materials, which makes a control over kinetics of nucleation and growth processes rather difficult to control thus resulting in non-uniform material and inhomogeneous grain size distribution. Application of tailor-made molecular precursors in low pressure or plasma-enhanced chemical vapor deposition (CVD) techniques offers a viable solution for overcoming thermodynamic impediments involved in thin film growth. In this paper molecule-based CVD of functional coatings is demonstrated for iron oxide (Fe2O3, Fe3O4), vanadium oxide (V2O5, VO2) and hafnium oxide (HfO2) phases followed by the characterization of their microstructural, compositional and functional properties which support the advantages of chemical design in simplifying deposition processes and optimizing functional behavior.

  11. Morphological and Electrochemical Study of Sulfide/Nitride Nanostructure Deposited Through Pulsed Plasma Electrolysis

    NASA Astrophysics Data System (ADS)

    Tavakoli, H.; Sobhani, M.

    2017-03-01

    This study investigated the feasibility of coating a steel St12 substrate with a sulfide/nitride layer. The coating process was conducted through a plasma electrolysis technique with a pulsed regime applied at frequencies of 100, 500, and 1000 Hz. It was found that the use of higher frequencies in the mentioned process provides better control over workpiece surface temperature and leads to reduced extent of voltage variations required to achieve a fixed temperature. The coating deposited at the frequency of 1000 Hz and voltage of about 235 V exhibited a nanostructure composed of 50 nm particles. The deposited coating consisted of an outer porous layer and an inner relatively dense layer. The x-ray studies identified the phases of the coating as γ'-Fe4N, Fe2-3N and FeS. The presence of FeS phase reduces the friction coefficient of the surface to about half the value obtainable in its absence. Studying the electrochemical impedance of the layer revealed that using a higher frequency in the deposition process increases the stability of resulting layer against seven days of immersion in the corrosive solution.

  12. Novel thin films deposited on electrospun PCL scaffolds by atmospheric pressure plasma jet for L929 fibroblast cell cultivation

    NASA Astrophysics Data System (ADS)

    Gozutok, M.; Baitukha, A.; Arefi-Khonsari, F.; Turkoglu Sasmazel, H.

    2016-11-01

    This paper reports on the deposition of PCL homopolymers and poly ɛ-caprolactone-polyethylene glycol (PCL-PEG) copolymers by atmospheric pressure plasma jet (APPJ) onto electrospun PCL scaffolds for improving L929 fibroblast cell growth. Polymer deposited scaffolds showed better stability as well as lower CA as compared to those treated with APPJ in Ar alone used as the carrier gas to introduce the precursors due to the formation of polar groups generated during the plasma treatment, such as -OH and/or -COO. Average fiber and porosity sizes were calculated by using SEM photographs and the ImageJ Launcher Software program and higher values were observed for both PCL and PCL-PEG deposited scaffolds than the untreated electrospun PCL scaffolds. XPS analysis showed that C1s% content decreased for PCL deposited (from 82.4% to 71.0%) and PCL-PEG deposited (from 82.4% to 57.7%) and O1s% composition increased for PCL deposited (from 17.6% to 29.0%) and PCL-PEG deposited (from 17.6% to 42.3%) compared to the untreated one. XPS results proved more incorporation of oxygen moieties on the deposited surfaces than the untreated samples giving rise to more hydrophilic surfaces to the deposited ones. Standard in vitro MTT test, Giemsa staining, fluorescence and CLSM imaging techniques were used for the determination of cell viability, adhesion and proliferation. Cell culture experiments showed that PCL-PEG deposited electrospun PCL scaffolds had the most promising cell adhesion, proliferation and growth among the treated scaffolds. The increased average fiber diameter caused by deposition as well as oxygen containing polar groups formed on the surfaces due to the radicals present in the plasma atmosphere provided higher surface area and functionality, respectively, for cells to attach, yielding better biocompatibility performance.

  13. Structure of the metallic films deposited on small spheres trapped in the rf magnetron plasma

    NASA Astrophysics Data System (ADS)

    Filippov, A. V.; Pal, A. F.; Ryabinkin, A. N.; Serov, A. O.

    2016-11-01

    Metallic coatings were deposited onto glass spheres having diameters from several to one hundred micrometers by the magnetron sputtering. Two different experimental schemes were exploited. One of them had the traditional configuration where a magnetron sputter was placed at one hundred millimeters from particles. In this scheme, continuous mechanical agitation in a fluidized bed was used to achieve uniformity of coatings. In the second scheme the treated particles (substrates) levitated in a magnetron rf plasma over a sputtered rf electrode (target) at the distance d of few mm from it and at gas pressure p values of 30-100 mTorr. These parameters are essentially different from those in the traditional sputtering. Agitation due to the features of a particle confinement in dusty plasma was used here to obtain uniform coatings. Thickness and morphology of the obtained coatings were studied. As it is known, film growth rate and structure are determined by the substrate temperature, the densities of ion and neutral atom fluxes to the substrate surface, the radiation flux density, and the heat energy produced due to the surface condensation of atoms and recombination of electrons and ions. These parameters particularly depend on the product of p and d. In the case of magnetron rf dusty plasma, it is possible to achieve the pd value several times lower than the lowest value proper to the first traditional case. Completely different dependencies of the film growth rate and structure on the pd value in these sputtering processes were observed and qualitatively explained.

  14. Vacuum arc plasma generation and thin film deposition from a TiB{sub 2} cathode

    SciTech Connect

    Zhirkov, Igor Petruhins, Andrejs; Naslund, Lars-Ake; Rosen, Johanna; Kolozsvári, Szilard; Polcik, Peter

    2015-11-02

    We have studied the utilization of TiB{sub 2} cathodes for thin film deposition in a DC vacuum arc system. We present a route for attaining a stable, reproducible, and fully ionized plasma flux of Ti and B by removal of the external magnetic field, which leads to dissipation of the vacuum arc discharge and an increased active surface area of the cathode. Applying a magnetic field resulted in instability and cracking, consistent with the previous reports. Plasma analysis shows average energies of 115 and 26 eV, average ion charge states of 2.1 and 1.1 for Ti and B, respectively, and a plasma ion composition of approximately 50% Ti and 50% B. This is consistent with measured resulting film composition from X-ray photoelectron spectroscopy, suggesting a negligible contribution of neutrals and macroparticles to the film growth. Also, despite the observations of macroparticle generation, the film surface is very smooth. These results are of importance for the utilization of cathodic arc as a method for synthesis of metal borides.

  15. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    DOE PAGES

    Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; ...

    2014-08-05

    Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems notmore » only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.« less

  16. Supported plasma sputtering apparatus for high deposition rate over large area

    DOEpatents

    Moss, Ronald W.; McClanahan, Jr., Edwin D.; Laegreid, Nils

    1977-01-01

    A supported plasma sputtering apparatus is described having shaped electrical fields in the electron discharge region between the cathode and anode and the sputter region between the target and substrate while such regions are free of any externally applied magnetic field to provide a high deposition rate which is substantially uniform over a wide area. Plasma shaping electrodes separate from the anode and target shape the electrical fields in the electron discharge region and the sputter region to provide a high density plasma. The anode surrounds the target to cause substantially uniform sputtering over a large target area. In one embodiment the anode is in the form of an annular ring surrounding a flat target surface, such anode being provided with a ribbed upper surface which shields portions of the anode from exposure to sputtered material to maintain the electron discharge for a long stable operation. Several other embodiments accomplish the same result by using different anodes which either shield the anode from sputtered material, remove the sputtered coating on the anode by heating, or simultaneously mix sputtered metal from the auxiliary target with sputtered insulator from the main target so the resultant coating is conductive. A radio frequency potential alone or together with a D.C. potential, may be applied to the target for a greater sputtering rate.

  17. Deposition and properties of high-velocity-oxygen-fuel and plasma-sprayed Mo-Mo2C composite coatings

    NASA Astrophysics Data System (ADS)

    Prchlik, L.; Gutleber, J.; Sampath, S.

    2001-12-01

    Molybdenum thermal-spray coatings, dispersion strengthened by molybdenum oxides and molybdenum carbides, play an important role in industrial tribological applications. Traditionally, they have been prepared by plasma and wire flame spraying. High porosity and lower cohesion strength limit their application in situations where both galling and abrasion wear is involved. In this study, high-velocity-oxygen-fuel (HVOF) deposition of molybdenum and molybdenum carbide coatings was attempted. Deposition was achieved for all powders used. Composition, microstructure, mechanical, and wear properties of the HVOF synthesized coatings were evaluated and compared with plasma-sprayed counterparts. The HVOF coatings possessed a very good abrasion resistance, whereas plasma deposits performed better in dry sliding tests. Measurements showed a close relationship between the coating surface hardness and its abrasion resistance. Results also suggested correlation between molybdenum carbide distribution in the molybdenum matrix and the sliding friction response of Mo-Mo2C coatings.

  18. Room temperature radio-frequency plasma-enhanced pulsed laser deposition of ZnO thin films

    NASA Astrophysics Data System (ADS)

    Huang, S.-H.; Chou, Y.-C.; Chou, C.-M.; Hsiao, V. K. S.

    2013-02-01

    In this study, we compared the crystalline structures, optical properties, and surface morphologies of ZnO thin films deposited on silicon and glass substrates by conventional pulsed laser deposition (PLD) and radio-frequency (RF) plasma-enhanced PLD (RF-PEPLD). The depositions were performed at room temperature under 30-100 mTorr pressure conditions. The RF-PEPLD process was found to have deposited a ZnO structure with preferred (0 0 2) c-axis orientation at a higher deposition rate; however, the RF-PEPLD process generated more defects in the thin films. The application of oxygen pressure to the RF-PEPLD process reduced defects effectively and also increased the deposition rate.

  19. Studies of lithium deposition and D retention on tungsten samples exposed to Li-seeded plasmas in PISCES-A

    NASA Astrophysics Data System (ADS)

    Tabarés, F. L.; Alegre, D.; Baldwin, M.; Nishijima, D.; Simmonds, M.; Doerner, R.; Alves, E.; Mateus, R.

    2017-04-01

    The interaction between lithium-seeded deuterium plasmas and tungsten targets has been studied in the PISCES-A divertor plasma simulator. Tungsten samples, of ITER-grade, with a diameter of 25 and 2 mm thick, were held at temperatures ranging from 403 to 873 K and exposed to Li/D plasmas under different plasma conditions and fixed total fluences of 5 ×1025 m‑2, with typical particle flux values of (1–5) × 1022 m‑2 s‑1. The deuterium and lithium contents of the samples after irradiation were analyzed by thermal desorption spectroscopy and nuclear reaction analysis (NRA). No lithium deposition was found within the sensitivity range of NRA, except for the cold (403 K) sample on which a layer with Li atomic density below 2 × 1022 m‑2 was detected. Deuterium retention values in the range of 1018 m‑2 were measured, even for the Li deposition conditions.

  20. In Situ Nanocalorimetric Investigations of Plasma Assisted Deposited Poly(ethylene oxide)-like Films by Specific Heat Spectroscopy.

    PubMed

    Madkou, Sherif; Melnichu, Iurii; Choukourov, Andrei; Krakovsky, Ivan; Biederman, Hynek; Schönhals, Andreas

    2016-04-28

    In recent years, highly cross-linked plasma polymers have started to unveil their potential in numerous biomedical applications in thin-film form. However, conventional diagnostic methods often fail due to their diverse molecular dynamics conformations. Here, glassy dynamics and the melting transition of thin PEO-like plasma assisted deposited (ppPEO) films (thickness 100 nm) were in situ studied by a combination of specific heat spectroscopy, utilizing a pJ/K sensitive ac-calorimeter chip, and composition analytical techniques. Different cross-linking densities were obtained by different plasma powers during the deposition of the films. Glassy dynamics were observed for all values of the plasma power. It was found that the glassy dynamics slows down with increasing the plasma power. Moreover, the underlying relaxation time spectra broaden indicating that the molecular motions become more heterogeneous with increasing plasma power. In a second set of the experiment, the melting behavior of the ppPEO films was studied. The melting temperature of ppPEO was found to decrease with increasing plasma power. This was explained by a decrease of the order in the crystals due to formation of chemical defects during the plasma process.

  1. Kinetic analysis of negative power deposition in inductive low pressure plasmas

    NASA Astrophysics Data System (ADS)

    Trieschmann, Jan; Mussenbrock, Thomas

    2017-02-01

    Negative power deposition in low pressure inductively coupled plasmas (ICPs) is investigated by means of an analytical model which couples Boltzmann’s equation and the quasi-stationary Maxwell’s equations. Exploiting standard Hilbert space methods an explicit solution for both, the electric field and the distribution function of the electrons for a bounded discharge configuration subject to an unsymmetrical excitation is found for the first time. The model is applied to a low pressure ICP discharge. In this context particularly the anomalous skin effect and the effect of phase mixing is discussed. The analytical solution is compared with results from electromagnetic full wave particle in cell simulations. Excellent agreement between the analytical and the numerical results is found.

  2. Perovskite solar cells based on nanocolumnar plasma-deposited ZnO thin films.

    PubMed

    Ramos, F Javier; López-Santos, Maria C; Guillén, Elena; Nazeeruddin, Mohammad Khaja; Grätzel, Michael; Gonzalez-Elipe, Agustin R; Ahmad, Shahzada

    2014-04-14

    ZnO thin films having a nanocolumnar microstructure are grown by plasma-enhanced chemical vapor deposition at 423 K on pre-treated fluorine-doped tin oxide (FTO) substrates. The films consist of c-axis-oriented wurtzite ZnO nanocolumns with well-defined microstructure and crystallinity. By sensitizing CH3NH3PbI3 on these photoanodes a power conversion of 4.8% is obtained for solid-state solar cells. Poly(triarylamine) is found to be less effective when used as the hole-transport material, compared to 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD), while the higher annealing temperature of the perovskite leads to a better infiltration in the nanocolumnar structure and an enhancement of the cell efficiency.

  3. Antifouling Transparent ZnO Thin Films Fabricated by Atmospheric Pressure Cold Plasma Deposition

    NASA Astrophysics Data System (ADS)

    Suzaki, Yoshifumi; Du, Jinlong; Yuji, Toshifumi; Miyagawa, Hayato; Ogawa, Kazufumi

    2015-09-01

    One problem with outdoor-mounted solar panels is that power generation efficiency is reduced by face plate dirt; a problem with electronic touch panels is the deterioration of screen visibility caused by finger grease stains. To solve these problems, we should fabricate antifouling surfaces which have superhydrophobic and oil-repellent properties without spoiling the transparency of the transparent substrate. In this study, an antifouling surface with both superhydrophobicity and oil-repellency was fabricated on a glass substrate by forming a fractal microstructure. The fractal microstructure was constituted of transparent silica particles 100 nm in diameter and transparent zinc-oxide columns grown on silica particles through atmospheric pressure cold plasma deposition; the sample surface was coated with a chemically adsorbed monomolecular layer. Samples were obtained which had a superhydrophobic property (with a water droplet contact angle of more than 150°) and a high average transmittance of about 90% (with wavelengths ranging from 400 nm to 780 nm).

  4. Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition

    SciTech Connect

    Kim, Y.; Song, W.; Lee, S. Y.; Jeon, C.; Jung, W.; Kim, M.; Park, C.-Y.

    2011-06-27

    Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 deg. C down to 450 deg. C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall transparency of 89% and low sheet resistances ranging from 590 to 1855 {Omega}/sq of graphene films were achieved at considerably low synthesis temperatures, MPCVD can be adopted in manufacturing future large-area electronic devices based on graphene film.

  5. Carbon nanowalls grown by microwave plasma enhanced chemical vapor deposition during the carbonization of polyacrylonitrile fibers

    SciTech Connect

    Li Jiangling; Su Shi; Kundrat, Vojtech; Abbot, Andrew M.; Ye, Haitao; Zhou Lei; Mushtaq, Fajer; Ouyang Defang; James, David; Roberts, Darren

    2013-01-14

    We used microwave plasma enhanced chemical vapor deposition (MPECVD) to carbonize an electrospun polyacrylonitrile (PAN) precursor to form carbon fibers. Scanning electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy were used to characterize the fibers at different evolution stages. It was found that MPECVD-carbonized PAN fibers do not exhibit any significant change in the fiber diameter, whilst conventionally carbonized PAN fibers show a 33% reduction in the fiber diameter. An additional coating of carbon nanowalls (CNWs) was formed on the surface of the carbonized PAN fibers during the MPECVD process without the assistance of any metallic catalysts. The result presented here may have a potential to develop a novel, economical, and straightforward approach towards the mass production of carbon fibrous materials containing CNWs.

  6. rf plasma oxidation of Ni thin films sputter deposited to generate thin nickel oxide layers

    SciTech Connect

    Hoey, Megan L.; Carlson, J. B.; Osgood, R. M. III; Kimball, B.; Buchwald, W.

    2010-10-11

    Nickel oxide (NiO) layers were formed on silicon (Si) substrates by plasma oxidation of nickel (Ni) film lines. This ultrathin NiO layer acted as a barrier layer to conduction, and was an integral part of a metal-insulator-metal (MIM) diode, completed by depositing gold (Au) on top of the oxide. The electrical and structural properties of the NiO thin film were examined using resistivity calculations, current-voltage (I-V) measurements and cross-sectional transmission electron microscopy (XTEM) imaging. The flow rate of the oxygen gas, chamber pressure, power, and exposure time and their influence on the characteristics of the NiO thin film were studied.

  7. Plasma-Enhanced Pulsed Laser Deposition of Wide Bandgap Nitrides for Space Power Applications

    NASA Technical Reports Server (NTRS)

    Triplett, G. E., Jr.; Durbin, S. M.

    2004-01-01

    The need for a reliable, inexpensive technology for small-scale space power applications where photovoltaic or chemical battery approaches are not feasible has prompted renewed interest in radioisotope-based energy conversion devices. Although a number of devices have been developed using a variety of semiconductors, the single most limiting factor remains the overall lifetime of the radioisotope battery. Recent advances in growth techniques for ultra-wide bandgap III-nitride semiconductors provide the means to explore a new group of materials with the promise of significant radiation resistance. Additional benefits resulting from the use of ultra-wide bandgap materials include a reduction in leakage current and higher operating voltage without a loss of energy transfer efficiency. This paper describes the development of a novel plasma-enhanced pulsed laser deposition system for the growth of cubic boron nitride semiconducting thin films, which will be used to construct pn junction devices for alphavoltaic applications.

  8. Stress hysteresis and mechanical properties of plasma-enhanced chemical vapor deposited dielectric films

    NASA Astrophysics Data System (ADS)

    Thurn, Jeremy; Cook, Robert F.; Kamarajugadda, Mallika; Bozeman, Steven P.; Stearns, Laura C.

    2004-02-01

    A comprehensive survey is described of the responses of three plasma-enhanced chemical vapor deposited dielectric film systems to thermal cycling and indentation contact. All three films—silicon oxide, silicon nitride, and silicon oxy-nitride—exhibited significant nonequilibrium permanent changes in film stress on thermal cycling or annealing. The linear relationship between stress and temperature changed after the films were annealed at 300 °C, representing a structural alteration in the film reflecting a change in coefficient of thermal expansion or biaxial modulus. A double-substrate method was used to deduce both thermoelastic properties before and after the anneal of selected films and the results were compared with the modulus deconvoluted from small-scale depth-sensing indentation experiments (nanoindentation). Rutherford backscattering spectrometry and hydrogen forward scattering were used to deduce the composition of the films and it was found that all the films contained significant amounts of hydrogen.

  9. Deposition of titanium nitride and hydroxyapatite-based biocompatible composite by reactive plasma spraying

    NASA Astrophysics Data System (ADS)

    Roşu, Radu Alexandru; Şerban, Viorel-Aurel; Bucur, Alexandra Ioana; Dragoş, Uţu

    2012-02-01

    Titanium nitride is a bioceramic material successfully used for covering medical implants due to the high hardness meaning good wear resistance. Hydroxyapatite is a bioactive ceramic that contributes to the restoration of bone tissue, which together with titanium nitride may contribute to obtaining a superior composite in terms of mechanical and bone tissue interaction matters. The paper presents the experimental results in obtaining composite layers of titanium nitride and hydroxyapatite by reactive plasma spraying in ambient atmosphere. X-ray diffraction analysis shows that in both cases of powders mixtures used (10% HA + 90% Ti; 25% HA + 75% Ti), hydroxyapatite decomposition occurred; in variant 1 the decomposition is higher compared with the second variant. Microstructure of the deposited layers was investigated using scanning electron microscope, the surfaces presenting a lamellar morphology without defects such as cracks or microcracks. Surface roughness values obtained vary as function of the spraying distance, presenting higher values at lower thermal spraying distances.

  10. In situ nitrogen-doped graphene grown from polydimethylsiloxane by plasma enhanced chemical vapor deposition

    SciTech Connect

    Wang, Chundong; Zhou, Yungang; He, Lifang; Ng, Tsz-Wai; Hong, Guo; Wu, Qi-Hui; Gao, Fei; Lee, Chun-Sing; Zhang, Wenjun

    2013-01-21

    Due to its unique electronic properties and wide spectrum of promising applications, graphene has attracted much attention from scientists in various fields. Control and engineering of graphene’s semiconducting properties is considered to be the key of its applications in electronic devices. Here, we report a novel method to prepare in situ nitrogen-doped graphene by microwave plasma assisted chemical vapor deposition (CVD) using PDMS (Polydimethylsiloxane) as a solid carbon source. Based on this approach, the concentration of nitrogen-doping can be easily controlled via the flow rate of nitrogen during the CVD process. X-ray photoelectron spectroscopy results indicated that the nitrogen atoms doped into graphene lattice were mainly in the forms of pyridinic and pyrrolic structures. Moreover, first-principles calculations show that the incorporated nitrogen atoms can lead to p-type doping of graphene. This in situ approach provides a promising strategy to prepare graphene with controlled electronic properties.

  11. Structural and mechanical properties of Al-C-N films deposited at room temperature by plasma focus device

    NASA Astrophysics Data System (ADS)

    Z, A. Umar; R, Ahmad; R, S. Rawat; M, A. Baig; J, Siddiqui; T, Hussain

    2016-07-01

    The Al-C-N films are deposited on Si substrates by using a dense plasma focus (DPF) device with aluminum fitted central electrode (anode) and by operating the device with CH4/N2 gas admixture ratio of 1:1. XRD results verify the crystalline AlN (111) and Al3CON (110) phase formation of the films deposited using multiple shots. The elemental compositions as well as chemical states of the deposited Al-C-N films are studied using XPS analysis, which affirm Al-N, C-C, and C-N bonding. The FESEM analysis reveals that the deposited films are composed of nanoparticles and nanoparticle agglomerates. The size of the agglomerates increases at a higher number of focus deposition shots for multiple shot depositions. Nanoindentation results reveal the variation in mechanical properties (nanohardness and elastic modulus) of Al-C-N films deposited with multiple shots. The highest values of nanohardness and elastic modulus are found to be about 11 and 185 GPa, respectively, for the film deposited with 30 focus deposition shots. The mechanical properties of the films deposited using multiple shots are related to the Al content and C-N bonding.

  12. Blood compatibility of titanium-based coatings prepared by metal plasma immersion ion implantation and deposition

    NASA Astrophysics Data System (ADS)

    Tsyganov, I.; Maitz, M. F.; Wieser, E.

    2004-07-01

    Titanium with its natural oxide is known to be generally good biocompatible; and therefore, the suitability of some Ti-based coatings as coating for blood-contacting implants is analyzed. Layers of pure Ti, Ti oxynitrides (TiN 1- xO x with x=0.25, 0.50, and 0.75), and Ti oxides were deposited on oxidized Si from a plasma produced by cathodic arc evaporation under addition of N 2 and/or O 2 to the ambient near the substrate. The oxynitrides are crystalline with the fcc structure of TiN up to x=0.25. For x=0.5, a two-phase system of fcc TiN and fcc TiO has been found. In dependence on the deposition parameters, amorphous and crystalline layers (anatase + brookite or rutile) of TiO 2 have been obtained. The rutile layers were doped by implantation of P. The amorphous TiO 2 layers were implanted with Cr. To study the correlation between structure of the coating and blood compatibility, the clotting time of blood plasma as well as the adhesion and activation of blood platelets on the surface was investigated. TiN and oxynitrides showed the longest clotting time compared to rutile. Minimum platelet adhesion has been observed for pure TiO 2. Contrasting tendencies in the dependence of clotting time and platelet adhesion on the microstructure have been stated. However, for P +-doped rutile, both enhanced clotting time and improved platelet adhesion were observed. Platelet adherence and activation always showed similar trends.

  13. Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

    SciTech Connect

    Douglas, Erica A.; Sheng, Josephine J.; Verley, Jason C.; Carroll, Malcolm S.

    2015-06-04

    We found that the demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature germanium on silicon deposition processes. Our work describes the development of a high density plasma chemical vapor deposition process that uses a low temperature (<460 °C) in situ germane/argon plasma surface preparation step for epitaxial growth of germanium on silicon. It is shown that the germane/argon plasma treatment sufficiently removes SiOx and carbon at the surface to enable germanium epitaxy. Finally, the use of this surface preparation step demonstrates an alternative way to produce germanium epitaxy at reduced temperatures, a key enabler for increased flexibility of integration with CMOS back-end-of-line fabrication.

  14. Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

    DOE PAGES

    Douglas, Erica A.; Sheng, Josephine J.; Verley, Jason C.; ...

    2015-06-04

    We found that the demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature germanium on silicon deposition processes. Our work describes the development of a high density plasma chemical vapor deposition process that uses a low temperature (<460 °C) in situ germane/argon plasma surface preparation step for epitaxial growth of germanium on silicon. It is shown that the germane/argon plasma treatment sufficiently removes SiOx and carbon at the surface to enable germanium epitaxy. Finally, the use of this surface preparation step demonstrates anmore » alternative way to produce germanium epitaxy at reduced temperatures, a key enabler for increased flexibility of integration with CMOS back-end-of-line fabrication.« less

  15. A solid-state nuclear magnetic resonance study of post-plasma reactions in organosilicone microwave plasma-enhanced chemical vapor deposition (PECVD) coatings.

    PubMed

    Hall, Colin J; Ponnusamy, Thirunavukkarasu; Murphy, Peter J; Lindberg, Mats; Antzutkin, Oleg N; Griesser, Hans J

    2014-06-11

    Plasma-polymerized organosilicone coatings can be used to impart abrasion resistance and barrier properties to plastic substrates such as polycarbonate. Coating rates suitable for industrial-scale deposition, up to 100 nm/s, can be achieved through the use of microwave plasma-enhanced chemical vapor deposition (PECVD), with optimal process vapors such as tetramethyldisiloxane (TMDSO) and oxygen. However, it has been found that under certain deposition conditions, such coatings are subject to post-plasma changes; crazing or cracking can occur anytime from days to months after deposition. To understand the cause of the crazing and its dependence on processing plasma parameters, the effects of post-plasma reactions on the chemical bonding structure of coatings deposited with varying TMDSO-to-O2 ratios was studied with (29)Si and (13)C solid-state magic angle spinning nuclear magnetic resonance (MAS NMR) using both single-pulse and cross-polarization techniques. The coatings showed complex chemical compositions significantly altered from the parent monomer. (29)Si MAS NMR spectra revealed four main groups of resonance lines, which correspond to four siloxane moieties (i.e., mono (M), di (D), tri (T), and quaternary (Q)) and how they are bound to oxygen. Quantitative measurements showed that the ratio of TMDSO to oxygen could shift the chemical structure of the coating from 39% to 55% in Q-type bonds and from 28% to 16% for D-type bonds. Post-plasma reactions were found to produce changes in relative intensities of (29)Si resonance lines. The NMR data were complemented by Fourier transform infrared (FTIR) spectroscopy. Together, these techniques have shown that the bonding environment of Si is drastically altered by varying the TMDSO-to-O2 ratio during PECVD, and that post-plasma reactions increase the cross-link density of the silicon-oxygen network. It appears that Si-H and Si-OH chemical groups are the most susceptible to post-plasma reactions. Coatings produced at a

  16. Comparison of pulsed and downstream deposition of fluorocarbon materials from C3F8 and c-C4F8 plasmas

    NASA Astrophysics Data System (ADS)

    Martin, Ina T.; Malkov, Galiya Sh.; Butoi, Carmen I.; Fisher, Ellen R.

    2004-03-01

    Materials deposited in continuous wave (cw) and pulsed low-pressure octafluoropropane (C3F8) and octafluorocyclobutane (c-C4F8) plasmas were characterized using Fourier transform infrared spectroscopy (FTIR), x-ray photoelectron spectroscopy, static contact angle measurements, spectroscopic ellipsometry, and scanning electron microscopy (SEM). Fluorocarbon (FC) materials deposited in pulsed plasmas were less crosslinked than those deposited in cw plasmas with equivalent input powers. Within each system, higher F/C ratio materials were deposited by lowering the plasma input power/duty cycle. Using downstream depositions had a similar effect on film composition, but also resulted in decreased deposition rates. SEM analysis showed that decreases in the flexibility of the fluorocarbon films were correlated with increases in the percent of crosslinking. Additionally, the smoothness of the film surfaces suggests that polymerization processes occur on the substrate surface. Overall, films deposited in C4F8 plasmas were more crosslinked and less flexible than those deposited in C3F8 plasmas under the same conditions. The composition of the deposited FC films is correlated to the nature and relative concentrations of nascent ions previously measured in these plasma systems using plasma ion mass spectrometry. .

  17. Diamond thin films grown by microwave plasma assisted chemical vapor deposition

    SciTech Connect

    Leksono, M.

    1991-09-05

    Undoped and boron doped diamond thin films have been successfully grown by microwave plasma chemical vapor deposition from CH{sub 4}, H{sub 2}, and B{sub 2}H{sub 6}. The films were characterized using x- ray diffraction techniques, Raman and infrared spectroscopies, scanning electron microscopy, secondary ion mass spectrometry, and various electrical measurements. The deposition rates of the diamond films were found to increase with the CH{sub 4} concentration, substrate temperature, and/or pressure, and at 1.0% methane, 900{degrees}C, and 35 Torr, the value was measured to be 0.87 {mu}m/hour. The deposition rate for boron doped diamond films, decreases as the diborane concentration increases. The morphologies of the undoped diamond films are strongly related to the deposition parameters. As the temperature increases from 840 to 925 C, the film morphology changes from cubo-octahedron to cubic structures, while as the CH{sub 4} concentration increases from 0.5 to 1.0%, the morphology changes from triangular (111) faces with a weak preferred orientation to square (100) faces. At 2.0% Ch{sub 4} or higher the films become microcrystalline with cauliflower structures. Scanning electron microscopy analyses also demonstrate that selective deposition of undoped diamond films has been successfully achieved using a lift-off process with a resolution of at least 2 {mu}m. The x-ray diffraction and Raman spectra demonstrate that high quality diamond films have been achieved. The concentration of the nondiamond phases in the films grown at 1.0% CH{sub 4} can be estimated from the Raman spectra to be at less than 0.2% and increases with the CH{sub 4} concentration. The Raman spectra of the boron doped diamond films also indicate that the presence of boron tends to suppress the nondiamond phases in the films. Infrared spectra of the undoped diamond films show very weak CH stretch peaks which suggest that the hydrogen concentration is very low.

  18. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Santra, T. S.; Liu, C. H.; Bhattacharyya, T. K.; Patel, P.; Barik, T. K.

    2010-06-01

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of CC, CH, SiC, and SiH bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio ID/IG. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  19. Plasma-assisted physical vapor deposition surface treatments for tribological control

    NASA Technical Reports Server (NTRS)

    Spalvins, Talivaldis

    1990-01-01

    In any mechanical or engineering system where contacting surfaces are in relative motion, adhesion, wear, and friction affect reliability and performance. With the advancement of space age transportation systems, the tribological requirements have dramatically increased. This is due to the optimized design, precision tolerance requirements, and high reliability expected for solid lubricating films in order to withstand hostile operating conditions (vacuum, high-low temperatures, high loads, and space radiation). For these problem areas the ion-assisted deposition/modification processes (plasma-based and ion beam techniques) offer the greatest potential for the synthesis of thin films and the tailoring of adherence and chemical and structural properties for optimized tribological performance. The present practices and new approaches of applying soft solid lubricant and hard wear resistant films to engineering substrates are reviewed. The ion bombardment treatments have increased film adherence, lowered friction coefficients, and enhanced wear life of the solid lubricating films such as the dichalcogenides (MoS2) and the soft metals (Au, Ag, Pb). Currently, sputtering is the preferred method of applying MoS2 films; and ion plating, the soft metallic films. Ultralow friction coefficients (less than 0.01) were achieved with sputtered MoS2. Further, new diamond-like carbon and BN lubricating films are being developed by using the ion assisted deposition techniques.

  20. Precursor-Surface Reactions in Plasma Deposition of Silicon Thin Films

    NASA Astrophysics Data System (ADS)

    Bakos, Tamas

    2005-03-01

    Device-quality hydrogenated amorphous silicon (a-Si:H) thin films are usually grown by plasma deposition under conditions where the SiH3 radical is the dominant deposition precursor. In this presentation, we report results of first-principles density functional theory calculations on the interactions of the SiH3 radical with the crystalline Si(100)-(2x1):H surface in conjunction with molecular-dynamics simulations of a-Si:H thin film growth by SiH3 radicals, which elucidate the pathways and energetics of surface reactions that govern important film properties. In particular, we show that an SiH3 radical can insert into strained surface Si-Si dimer bonds, abstract surface H through an Eley-Rideal mechanism, and passivate surface dangling bonds; these reactions follow exothermic and barrierless pathways that lead to a temperature-independent growth rate in agreement with experimental measurements. We also identify a thermally activated surface H abstraction process, in which the SiH3 radical diffuses through overcoordinated surface Si atoms until it encounters a favorable site for H abstraction; the diffusion and H-abstraction steps have commensurate activation barriers. This mechanism explains partly the reduction of the film H content at elevated substrate temperatures.

  1. Application of a single crystal chemical vapor deposition diamond detector for deuteron plasma neutron measurement

    NASA Astrophysics Data System (ADS)

    Xie, Xufei; Yuan, Xi; Zhang, Xing; Chen, Zhongjing; Peng, Xingyu; Du, Tengfei; Li, Tao; Hu, Zhimeng; Cui, Zhiqiang; Chen, Jinxiang; Li, Xiangqing; Zhang, Guohui; Fan, Tieshuan; Yuan, Guoliang; Yang, Jinwei; Yang, Qingwei

    2014-10-01

    A single crystal chemical vapor deposition (scCVD) diamond detector has been characterized and employed for the neutron measurement at the HL-2A tokamak device. The scCVD diamond detector has been deposited with 5 μm of lithium fluoride (LiF) layer to enhance the sensitivity to thermal neutrons. Time stability of the detector has been studied with α-source and good performance has been found for more than 12 h. Neutron irradiations have been performed in four quasi-monoenergetic neutron fields in the energy range from 2.50 MeV to 16.03 MeV. The measured response function of the scCVD diamond detector to 14.13 MeV neutrons shows a narrow 12C (n, α)9Be reaction peak which is well isolated from other structures by about 1 MeV in energy, indicating the great potential as a fast neutron spectrometer. Neutron measurement of deuterium plasma discharge was established at the HL-2A tokamak device, and good consistence has been revealed among this detector signal and other related signals.

  2. Electrical performance of low cost cathodes prepared by plasma sputtering deposition in microbial fuel cells.

    PubMed

    Lefebvre, Olivier; Tang, Zhe; Fung, Martin P H; Chua, Daniel H C; Chang, In Seop; Ng, How Y

    2012-01-15

    Microbial fuel cells (MFCs) could potentially be utilized for a variety of applications in the future from biosensors to wastewater treatment. However, the amount of costly platinum (Pt) used as a catalyst should be minimized via innovative deposition methods such as sputtering. In addition, alternative and low-cost catalysts, such as cobalt (Co), should be sought. In this study, ultra low Pt or Co cathodes (0.1 mg cm(-2)) were manufactured by plasma sputtering deposition and scanning electron micrographs revealed nano-clusters of metal catalyst in a porous structure favorable to the three-phase heterogeneous catalytic reaction. When operated in single-chamber air-cathode MFCs, sputtered-Co cathodes generated on average the same power as sputtered-Pt cathodes (0.27 mW cell(-1)) and only 27% less than conventional Pt-ink cathodes with a catalyst load 5 times higher (0.5 mg cm(-2)). Finally, microscopy and molecular analyses showed evidence of biocatalysis activity on metal-free cathodes.

  3. Electron cyclotron resonance microwave plasma deposition of a-Si:H and a-SiC:H films

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Pool, F. S.

    1991-01-01

    The paper reports electron cyclotron resonance (ECR) deposition of a-Si:H and a-SiC:H thin films using SiH4, CH4, and hydrogen mixed gas plasmas. The ECR deposition conditions were investigated in the pressure region of 0.1 to 100 mtorr, and the film properties were characterized by light and dark conductivity measurements, XRD, Raman spectroscopy, optical transmission, and IR spectroscopy. In addition, the hydrogen dilution effect on ECR-deposited a-SiC:H was investigated.

  4. Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma

    SciTech Connect

    Okada, H.; Kato, M.; Ishimaru, T.; Sekiguchi, H.; Wakahara, A.; Furukawa, M.

    2014-02-20

    Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma is investigated. Feasibility of precursors of triethylsilane (TES) and bis(dimethylamino)dimethylsilane (BDMADMS) is discussed based on a calculation of bond energies by computer simulation. Refractive indices of 1.81 and 1.71 are obtained for deposited films with TES and BDMADMS, respectively. X-ray photoelectron spectroscopy (XPS) analysis of the deposited film revealed that TES-based film coincides with the stoichiometric thermal silicon nitride.

  5. Growth of Er-doped silicon using metalorganics by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Andry, P. S.; Varhue, W. J.; Ladipo, F.; Ahmed, K.; Adams, E.; Lavoie, M.; Klein, P. B.; Hengehold, R.; Hunter, J.

    1996-07-01

    Epitaxial growth of Er-doped silicon films has been performed by plasma-enhanced chemical vapor deposition at low temperature (430 °C) using an electron cyclotron resonance source. The goal was to incorporate an optically active center, erbium surrounded by nitrogen, through the use of the metalorganic compound tris (bis trimethyl silyl amido) erbium. Films were analyzed by Rutherford backscattering spectrometry, secondary ion mass spectroscopy, and high resolution x-ray diffraction. The characteristic 1.54 μm emission was observed by photoluminescence spectroscopy. Previous attempts to incorporate the complex (ErO6) using tris (2,2,6,6-tetramethyl- 3,5-heptanedionato) erbium (III) indicated that excessive carbon contamination lowered epitaxial quality and reduced photoluminescent intensity. In this study, chemical analysis of the films also revealed a large carbon concentration, however, the effect on epitaxial quality was much less destructive. A factorial design experiment was performed whose analysis identified the key processing parameters leading to high quality luminescent films. Hydrogen was found to be a major cause of crystal quality degradation in our metalorganic plasma-enhanced process.

  6. Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor.

    PubMed

    Park, Jae-Min; Jang, Se Jin; Yusup, Luchana L; Lee, Won-Jun; Lee, Sang-Ick

    2016-08-17

    We report the plasma-enhanced atomic layer deposition (PEALD) of silicon nitride thin film using a silylamine compound as the silicon precursor. A series of silylamine compounds were designed by replacing SiH3 groups in trisilylamine by dimethylaminomethylsilyl or trimethylsilyl groups to obtain sufficient thermal stability. The silylamine compounds were synthesized through redistribution, amino-substitution, lithiation, and silylation reactions. Among them, bis(dimethylaminomethylsilyl)trimethylsilyl amine (C9H29N3Si3, DTDN2-H2) was selected as the silicon precursor because of the lowest bond dissociation energy and sufficient vapor pressures. The energies for adsorption and reaction of DTDN2-H2 with the silicon nitride surface were also calculated by density functional theory. PEALD silicon nitride thin films were prepared using DTDN2-H2 and N2 plasma. The PEALD process window was between 250 and 400 °C with a growth rate of 0.36 Å/cycle. The best film quality was obtained at 400 °C with a RF power of 100 W. The PEALD film prepared showed good bottom and sidewall coverages of ∼80% and ∼73%, respectively, on a trench-patterned wafer with an aspect ratio of 5.5.

  7. Growth of ultrananocrystalline diamond film by DC Arcjet plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Chen, G. C.; Li, B.; Yan, Z. Q.; Liu, J.; Lu, F. X.; Ye, H.

    2012-06-01

    Self-standing diamond films were grown by DC Arcjet plasma enhanced chemical vapor deposition (CVD). The feed gasses were Ar/H2/CH4, in which the flow ratio of CH4 to H2 (F/F) was varied from 5% to 20%. Two distinct morphologies were observed by scanning electron microscope (SEM), i.e. the "pineapple-like" morphology and the "cauliflower-like" morphology. It was found that the morphologies of the as-grown films are strongly dependent on the flow ratio of CH4 to H2 in the feed gasses. High resolution transmission electron microscope (HRTEM) survey results revealed that there were nanocrystalline grains within the "pineapple-like" films whilst there were ultrananocrystalline grains within "cauliflower-like" films. X-ray diffraction (XRD) results suggested that (110) crystalline plane was the dominant surface in the "cauliflower-like" films whilst (100) crystalline plane was the dominant surface in the "pineapple-like" films. Raman spectroscopy revealed that nanostructured carbon features could be observed in both types of films. Plasma diagnosis was carried out in order to understand the morphology dependent growth mechanism. It could be concluded that the film morphology was strongly influenced by the density of gas phases. The gradient of C2 radical was found to be different along the growth direction under the different growth conditions.

  8. Passivation of aluminum nanoparticles by plasma-enhanced chemical vapor deposition for energetic nanomaterials.

    PubMed

    Shahravan, Anaram; Desai, Tapan; Matsoukas, Themis

    2014-05-28

    We have produced passivating coatings on 80-nm aluminum particles by plasma-enhanced chemical vapor deposition (PECVD). Three organic precursors--isopropyl alcohol, toluene, and perfluorodecalin--were used to fabricate thin films with thicknesses ranging from 5 nm to 30 nm. The coated samples and one untreated sample were exposed to 85% humidity at 25 °C for two months, and the active Al content was determined by thermogravimetric analysis (TGA) in the presence of oxygen. The results were compared with an uncoated sample stored in a glovebox under argon for the same period. We find that all three coatings provide protection against humidity, compared to the control, and their efficacy ranks in the following order: isopropyl alcohol < toluene < perfluorodecalin. This order also correlates with increasing water contact angle of the three solid coatings. The amount of heat released in the oxidation, measured by differential scanning calorimetry (DSC), was found to increase in the same order. Perfluorodecalin resulted in providing the best protection, and it produced the maximum enthalpy of combustion, ΔH = 4.65 kJ/g. This value is higher than that of uncoated aluminum stored in the glovebox, indicating that the coatings promote more complete oxidation of the core. Overall, we conclude that the plasma polymer coatings of this study are suitable passivating thin film for aluminum nanoparticles by providing protection against oxidation while facilitating the complete oxidation of the metallic core at elevated temperature.

  9. Epithelial cell morphology and adhesion on diamond films deposited and chemically modified by plasma processes.

    PubMed

    Rezek, Bohuslav; Ukraintsev, Egor; Krátká, Marie; Taylor, Andrew; Fendrych, Frantisek; Mandys, Vaclav

    2014-09-01

    The authors show that nanocrystalline diamond (NCD) thin films prepared by microwave plasma enhanced chemical vapor deposition apparatus with a linear antenna delivery system are well compatible with epithelial cells (5637 human bladder carcinoma) and significantly improve the cell adhesion compared to reference glass substrates. This is attributed to better adhesion of adsorbed layers to diamond as observed by atomic force microscopy (AFM) beneath the cells. Moreover, the cell morphology can be adjusted by appropriate surface treatment of diamond by using hydrogen and oxygen plasma. Cell bodies, cytoplasmic rims, and filopodia were characterized by Peakforce AFM. Oxidized NCD films perform better than other substrates under all conditions (96% of cells adhered well). A thin adsorbed layer formed from culture medium and supplemented with fetal bovine serum (FBS) covered the diamond surface and played an important role in the cell adhesion. Nevertheless, 50-100 nm large aggregates formed from the RPMI medium without FBS facilitated cell adhesion also on hydrophobic hydrogenated NCD (increase from 23% to 61%). The authors discuss applicability for biomedical uses.

  10. Analyzing the contents of residual and plasma-supporting gases inside a vacuum deposition unit chamber

    NASA Astrophysics Data System (ADS)

    Mikheev, A. Ye; Kharlamov, V. A.; Kruchek, S. D.; Cherniatina, A. A.; Khomenko, I. I.

    2015-01-01

    The paper describes a quadruple mass-spectrometer method, which is used to analyze the content of residual gas in a vacuum chamber of the ARM NTM (Automatised Working Area) ion-plasma unit. This unit is used to perfect the magnetron deposition process for coating radio-reflecting surfaces. The intake of pure argon into the chamber revealed up to 0.3 % of impurities in the plasma-supporting gas, including 0.02 % of water and oxygen. A significant presence of hydrocarbon gases is explained by the presence of solvents sorbed in rubber washers, joints of internal equipment, and other components inside the chamber. In order to decrease the level of impurities in the plasmasupporting atmosphere inside the chamber and improve the composition and properties of the coatings, it is necessary to take additional measures to cleanse and degas the surface of the chamber from condensation products and hydrocarbon compounds. To provide a minimal level of impurities in the coated surfaces it is vital to clean and degas the surfaces of the chamber, removing residual moisture and hydrocarbon compounds.

  11. Hydrophobicity enhancement of Al2O3 thin films deposited on polymeric substrates by atomic layer deposition with perfluoropropane plasma treatment

    NASA Astrophysics Data System (ADS)

    Ali, Kamran; Choi, Kyung-Hyun; Kim, Chang Young; Doh, Yang Hoi; Jo, Jeongdai

    2014-06-01

    The optoelectronics devices such as organic light emitting diodes are greatly vulnerable to moisture, which reduces their functionality and life cycle. The Al2O3 thin films are mostly used as barrier coatings in such electronic devices to protect them from water vapors. The performance of the Al2O3 barrier films can be improved by enhancing their hydrophobicity. Greater the hydrophobicity of the barrier films, greater will be their protection against water vapors. This paper reports on the enhancement of hydrophobicity of Al2O3 thin films through perfluoropropane (C3F8) plasma treatment. Firstly, good quality Al2O3 films have been fabricated through atomic layer deposition (ALD) on polyethylene naphthalate (PEN) substrates at different temperatures. The fabricated films are then plasma treated with C3F8 to enhance their hydrophobicity. Hydrophobic Al2O3 thin films have shown good morphological and optical properties. Low average arithmetic roughness (Ra) of 1.90 nm, 0.93 nm and 0.88 nm have been recorded for the C3F8 plasma treated films deposited at room temperature (RT), 50 °C and 150 °C, respectively. Optical transmittance of more than 90% has been achieved for the C3F8 plasma treated films grown at 50 °C and 150 °C. The contact angle has been increased from 48° ± 3 to 158° ± 3 for the films deposited at RT and increased from 41° ± 3 to 148° ± 3 for the films deposited at 150 °C.

  12. Rutile-structured TiO{sub 2} deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode

    SciTech Connect

    Pointet, John; Gonon, Patrice; Latu-Romain, Lawrence; Bsiesy, Ahmad Vallée, Christophe

    2014-01-15

    In this work, tetrakis(dimethylamino)titanium precursor as well as in-situ oxidized ruthenium bottom electrode were used to grow rutile-structured titanium dioxide thin layers by plasma enhanced atomic layer deposition. Metal–insulator–metal capacitors have been elaborated in order to study the electrical properties of the device. It is shown that this process leads to devices exhibiting excellent results in terms of dielectric constant and leakage current.

  13. Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Chen, X. Y.; Lu, Y. F.; Tang, L. J.; Wu, Y. H.; Cho, B. J.; Xu, X. J.; Dong, J. R.; Song, W. D.

    2005-01-01

    We have investigated phase separation, silicon nanocrystal (Si NC) formation and optical properties of Si oxide (SiOx, 0deposited by plasma-enhanced chemical vapor deposition at different nitrous-oxide/silane flow ratios. The physical and optical properties of the SiOx films were studied as a result of high-vacuum annealing and thermal oxidation. X-ray photoelectron spectroscopy (XPS) reveals that the as-deposited films have a random-bonding or continuous-random-network structure with different oxidation states. After annealing at temperatures above 1000 °C, the intermediate Si continuum in XPS spectra (referring to the suboxide) split to Si peaks corresponding to SiO2 and elemental Si. This change indicates the phase separation of the SiOx into more stable SiO2 and Si clusters. Raman, high-resolution transmission electron microscopy and optical absorption confirmed the phase separation and the formation of Si NCs in the films. The size of Si NCs increases with increasing Si concentration in the films and increasing annealing temperature. Two photoluminescence (PL) bands were observed in the films after annealing. The ultraviolet (UV)-range PL with a peak fixed at 370-380 nm is independent of Si concentration and annealing temperature, which is a characteristic of defect states. Strong PL in red range shows redshifts from ˜600 to 900 nm with increasing Si concentration and annealing temperature, which supports the quantum confinement model. After oxidation of the high-temperature annealed films, the UV PL was almost quenched while the red PL shows continuous blueshifts with increasing oxidation time. The different oxidation behaviors further relate the UV PL to the defect states and the red PL to the recombination of quantum-confined excitions.

  14. Hybrid layers deposited by an atmospheric pressure plasma process for corrosion protection of galvanized steel.

    PubMed

    Del Frari, D; Bour, J; Bardon, J; Buchheit, O; Arnoult, C; Ruch, D

    2010-04-01

    Finding alternative treatments to reproduce anticorrosion properties of chromated coatings is challenging since both physical barrier and self-healing effects are needed. Siloxane based treatments are known to be a promising way to achieve physical barrier coatings, mainly plasma polymerized hexamethyldisiloxane (ppHMDSO). In addition, it is known that cerium-based coatings can also provide corrosion protection of metals by means of self-healing effect. In this frame, innovative nanoAlCeO3/ppHMDSO layers have thus been deposited and studied. These combinations allow to afford a good physical barrier effect and active properties. Liquid siloxane and cerium-based particles mixture is atomized and introduced as precursors into a carrier gas. Gas mixture is then injected into an atmospheric pressure dielectric barrier discharge (DBD) where plasma polymerization of the siloxane precursor occurs. The influence of cerium concentration on the coating properties is investigated: coating structure and topography have been studied by scanning electron microscopy (SEM) and interferometry, and corrosion resistance of these different coatings is compared by electrochemistry techniques: polarization curves and electrochemical impedance spectroscopy (EIS). Potential self-healing property afforded by cerium in the layer was studied by associating EIS measurements and nanoscratch controlled damaging. Among the different combinations investigated, mixing of plasma polymerized HMDSO and AICeO3 nanoparticles seems to give promising results with a good physical barrier and interesting electroactive properties. Indeed, corrosion currents measured on such coatings are almost as low as those measured with the chromated film. Combination of nanoscratch damaging of layers with EIS experiments to investigate self-healing also allow to measure the active protection property of such layers.

  15. Characteristic Features of the Formation of a Combined Magnetron-Laser Plasma in the Processes of Deposition of Film Coatings

    NASA Astrophysics Data System (ADS)

    Burmakov, A. P.; Kuleshov, V. N.; Prokopchik, K. Yu.

    2016-09-01

    A block diagram of a facility for combined magnetron-laser deposition of coatings and of the systems of controlling and managing this process is considered. The results of analysis of the influence of the gas medium and of laser radiation parameters on the emission-optical properties of laser plasma are considered. The influence of the laser plasma on the electric characteristics of a magnetron discharge is analyzed. The formation of the laser plasma-initiated pulse arc discharge has been established and the influence of the laser radiation parameters on the electric characteristics of this discharge has been determined. The emission optical spectra of the magnetron discharge plasma and of erosion laser plasma are compared separately and in combination.

  16. Deposition and Characterization of Nanocrystalline Diamond Films on Mirror-Polished Si Substrate by Biased Enhanced Microwave Plasma Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Soga, T.; Sharda, T.; Jimbo, T.; Umeno, M.

    Hard and smooth nanocrystalline diamond (NCD) thin films were deposited on polished silicon substrates by biased enhanced growth in microwave plasma chemical vapor deposition. The films deposited with varying the methane concentration and biasing voltage were characterized by Raman spectroscopy, nano-indenter, x-ray diffraction and atomic force microscopy. Stress in the films increases with decreasing methane concentration in the gas-phase and with increasing biasing. The adhesion between NCD film and Si substrate is very strong sustaining the compressive stress as high as high as 85 GPa. It was hypothesized that hydrogen content of the films and graphitic content of the films are responsible in generating stress. The hardness is well correlated with the Raman peak intensity ratio of NCD peak to G peak.

  17. Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers

    NASA Astrophysics Data System (ADS)

    Karbasian, Golnaz

    The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performance and reliability of the circuits, minimization of the energy consumption in logic devices is now the center of attention. According to the International Technology Roadmaps for Semiconductors (ITRS), single electron transistors (SETs) hold the promise of achieving the lowest power of any known logic device, as low as 1x10-18 J per switching event. Moreover, SETs are the most sensitive electrometers to date, and are capable of detecting a fraction of an electron charge. Despite their low power consumption and high sensitivity for charge detection, room temperature operation of these devices is quite challenging mainly due to lithographical constraints in fabricating structures with the required dimensions of less than 10 nm. Silicon based SETs have been reported to operate at room temperature. However, they all suffer from significant variation in batch-to-batch performance, low fabrication yield, and temperature-dependent tunnel barrier height. In this project, we explored the fabrication of SETs featuring metal-insulator-metal (MIM) tunnel junctions. While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Therefore, metal SETs are potentially more predictable in behavior, making them easier to incorporate into circuits, and easier to check against theoretical models. Here, the proposed fabrication method takes advantage of unique properties of chemical mechanical polishing (CMP) and plasma enhanced atomic layer deposition (PEALD). Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam

  18. Al{sub 2}O{sub 3} multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition

    SciTech Connect

    Jung, Hyunsoo; Jeon, Heeyoung; Choi, Hagyoung; Ham, Giyul; Shin, Seokyoon; Jeon, Hyeongtag

    2014-02-21

    Al{sub 2}O{sub 3} films deposited by remote plasma atomic layer deposition have been used for thin film encapsulation of organic light emitting diode. In this study, a multi-density layer structure consisting of two Al{sub 2}O{sub 3} layers with different densities are deposited with different deposition conditions of O{sub 2} plasma reactant time. This structure improves moisture permeation barrier characteristics, as confirmed by a water vapor transmission rate (WVTR) test. The lowest WVTR of the multi-density layer structure was 4.7 × 10{sup −5} gm{sup −2} day{sup −1}, which is one order of magnitude less than WVTR for the reference single-density Al{sub 2}O{sub 3} layer. This improvement is attributed to the location mismatch of paths for atmospheric gases, such as O{sub 2} and H{sub 2}O, in the film due to different densities in the layers. This mechanism is analyzed by high resolution transmission electron microscopy, elastic recoil detection, and angle resolved X-ray photoelectron spectroscopy. These results confirmed that the multi-density layer structure exhibits very good characteristics as an encapsulation layer via location mismatch of paths for H{sub 2}O and O{sub 2} between the two layers.

  19. Oxygen Gas Barrier Properties of Hydrogenated Amorphous Carbon Thin Films Deposited with a Pulse-Biased Inductively Coupled Plasma Chemical Vapor Deposition Method

    NASA Astrophysics Data System (ADS)

    Baek, Sang-min; Shirafuji, Tatsuru; Cho, Sung-pyo; Saito, Nagahiro; Takai, Osamu

    2010-08-01

    Hydrogenated amorphous carbon (a-C:H) films have been deposited on poly(ethylene terephthalate) (PET) films with an pulse-biased inductively coupled plasma chemical vapor deposition method using CH4 and C2H2 gases. We have investigated the effects of the pulse-bias frequency on the oxygen transmission rate (OTR) of the a-C:H-coated PET sample, and discussed relationship between the OTR characteristics and the structure of the films based on the results of Raman and infrared absorption spectroscopy. In case of CH4 plasmas, the OTR of the sample has been reduced down to 1.12 cm3/(m2·day·atm) by increasing the bias-frequency to 2 kHz, and the structure of the a-C:H films has been modified from polymer-like to tetrahedral one. In case of C2H2 plasmas, the OTR of the samples has been 1.18 cm3/(m2·day·atm) with the lower bias frequency of 0.5 kHz, and has not shown strong dependence on the pulse-bias frequency. This has been explained by the fact that the films prepared with C2H2 plasma can be modified to tetrahedral structures by applying the bias with the lower frequency.

  20. Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor–insulator–semiconductor heterojunction solar cell

    SciTech Connect

    Talkenberg, Florian Illhardt, Stefan; Schmidl, Gabriele; Schleusener, Alexander; Sivakov, Vladimir; Radnóczi, György Zoltán; Pécz, Béla; Dikhanbayev, Kadyrjan; Mussabek, Gauhar; Gudovskikh, Alexander

    2015-07-15

    Semiconductor–insulator–semiconductor heterojunction solar cells were prepared using atomic layer deposition (ALD) technique. The silicon surface was treated with oxygen and hydrogen plasma in different orders before dielectric layer deposition. A plasma-enhanced ALD process was applied to deposit dielectric Al{sub 2}O{sub 3} on the plasma pretreated n-type Si(100) substrate. Aluminum doped zinc oxide (Al:ZnO or AZO) was deposited by thermal ALD and serves as transparent conductive oxide. Based on transmission electron microscopy studies the presence of thin silicon oxide (SiO{sub x}) layer was detected at the Si/Al{sub 2}O{sub 3} interface. The SiO{sub x} formation depends on the initial growth behavior of Al{sub 2}O{sub 3} and has significant influence on solar cell parameters. The authors demonstrate that a hydrogen plasma pretreatment and a precursor dose step repetition of a single precursor improve the initial growth behavior of Al{sub 2}O{sub 3} and avoid the SiO{sub x} generation. Furthermore, it improves the solar cell performance, which indicates a change of the Si/Al{sub 2}O{sub 3} interface states.

  1. Characterization of the ion cathode fall region in relation to the growth rate in plasma sputter deposition

    NASA Astrophysics Data System (ADS)

    Palmero, A.; van Hattum, E. D.; Rudolph, H.; Habraken, F. H. P. M.

    2007-02-01

    In plasma-assisted magnetron sputtering, the ion cathode fall region is the part of the plasma where the DC electric field and ion current evolve from zero to their maximum values at the cathode. These quantities are straightforwardly related to the deposition rate of the sputtered material. In this work we derive simple relations for the measurable axially averaged values of the ion density and the ion current at the ion cathode fall region and relate them with the deposition rate. These relations have been tested experimentally in the case of an argon plasma in a magnetron sputtering system devoted to depositing amorphous silicon. Using a movable Langmuir probe, the profiles of the plasma potential and ion density were measured along an axis perpendicularly to the cathode and in front of the so-called race-track. The deposition rate of silicon, under different conditions of pressure and input power, has been found to compare well with those determined with the relations derived.

  2. Laser-induced fluorescence analysis of plasmas for epitaxial growth of YBiO3 films with pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Orsel, Kasper; Groenen, Rik; Bastiaens, Bert; Koster, Gertjan; Rijnders, Guus; Boller, Klaus-J.

    2016-12-01

    We record the two-dimensional laser-induced fluorescence (LIF) on multiple plasma constituents in a YBiO3 plasma. This allows us to directly link the influence of oxygen present in the background gas during pulsed laser deposition to the oxidation of plasma species as well as the formation of epitaxial YBiO3 films. With spatiotemporal LIF mapping of the plasma species (Y, YO, Bi, and BiO) in different background gas compositions, we find that little direct chemical interaction takes place between the plasma plume constituents and the background gas. However, a strong influence of the background gas composition can be seen on the YBO film growth, as well as a strong correlation between the oxygen fraction in the background gas and the amount of YO in the plasma plume. We assign this correlation to a direct interaction between the background gas and the target in between ablation pulses. In an O2 background, an oxygen-rich surface layer forms in between ablation pulses, which provides additional oxygen for the plasma plume during target ablation. This differs from our previous observations in STO and LAO plasmas, where species oxidation primarily takes place during propagation of the plasma plume towards the substrate.

  3. Microwave Plasma-Activated Chemical Vapor Deposition of Nitrogen-Doped Diamond. II: CH4/N2/H2 Plasmas

    PubMed Central

    2016-01-01

    We report a combined experimental and modeling study of microwave-activated dilute CH4/N2/H2 plasmas, as used for chemical vapor deposition (CVD) of diamond, under very similar conditions to previous studies of CH4/H2, CH4/H2/Ar, and N2/H2 gas mixtures. Using cavity ring-down spectroscopy, absolute column densities of CH(X, v = 0), CN(X, v = 0), and NH(X, v = 0) radicals in the hot plasma have been determined as functions of height, z, source gas mixing ratio, total gas pressure, p, and input power, P. Optical emission spectroscopy has been used to investigate, with respect to the same variables, the relative number densities of electronically excited species, namely, H atoms, CH, C2, CN, and NH radicals and triplet N2 molecules. The measurements have been reproduced and rationalized from first-principles by 2-D (r, z) coupled kinetic and transport modeling, and comparison between experiment and simulation has afforded a detailed understanding of C/N/H plasma-chemical reactivity and variations with process conditions and with location within the reactor. The experimentally validated simulations have been extended to much lower N2 input fractions and higher microwave powers than were probed experimentally, providing predictions for the gas-phase chemistry adjacent to the diamond surface and its variation across a wide range of conditions employed in practical diamond-growing CVD processes. The strongly bound N2 molecule is very resistant to dissociation at the input MW powers and pressures prevailing in typical diamond CVD reactors, but its chemical reactivity is boosted through energy pooling in its lowest-lying (metastable) triplet state and subsequent reactions with H atoms. For a CH4 input mole fraction of 4%, with N2 present at 1–6000 ppm, at pressure p = 150 Torr, and with applied microwave power P = 1.5 kW, the near-substrate gas-phase N atom concentration, [N]ns, scales linearly with the N2 input mole fraction and exceeds the concentrations [NH]ns, [NH2]ns

  4. Plasma damage-free deposition of Al cathode on organic light-emitting devices by using mirror shape target sputtering

    SciTech Connect

    Kim, Han-Ki; Kim, D.-G.; Lee, K.-S.; Huh, M.-S.; Jeong, S.H.; Kim, K.I.; Kim, H.; Han, D.W.; Kwon, J.H.

    2004-11-08

    We report on the fabrication of plasma damage-free organic light-emitting devices (OLEDs) by using a mirror shape target sputtering (MSTS) technique. It is shown that OLEDs with Al cathode deposited by the MSTS show much lower leakage current (1x10{sup -5} mA/cm{sup 2}) at reverse bias of -6 V, compared to that (1x10{sup -1}-{approx}10{sup -2} mA/cm{sup 2} at -6 V) of OLEDs with Al cathodes grown by conventional dc magnetron sputtering. This indicates that there is no plasma damage, which is caused by the bombardment of energetic particles. This suggests that MSTS could be a useful plasma damage-free and low-temperature deposition technique for both top- and bottom-emitting OLEDs and flexible displays.

  5. Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

    SciTech Connect

    Knoops, Harm C. M. E-mail: w.m.m.kessels@tue.nl; Peuter, K. de; Kessels, W. M. M. E-mail: w.m.m.kessels@tue.nl

    2015-07-06

    The requirements on the material properties and growth control of silicon nitride (SiN{sub x}) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiN{sub x} by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiN{sub x} by plasma-assisted ALD and that this parameter can be linked to a so-called “redeposition effect”. This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiN{sub x} ALD using SiH{sub 2}(NH{sup t}Bu){sub 2} as precursor and N{sub 2} plasma as reactant, the gas residence time τ was found to determine both SiN{sub x} film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.

  6. Physics of Plasma-Based Ion Implantation&Deposition (PBIID)and High Power Impulse Magnetron Sputtering (HIPIMS): A Comparison

    SciTech Connect

    Anders, Andre

    2007-08-28

    The emerging technology of High Power Impulse MagnetronSputtering (HIPIMS) has much in common with the more establishedtechnology of Plasma Based Ion Implantation&Deposition (PBIID):both use pulsed plasmas, the pulsed sheath periodically evolves andcollapses, the plasma-sheath system interacts with the pulse-drivingpower supply, the plasma parameters are affected by the power dissipated,surface atoms are sputtered and secondary electrons are emitted, etc.Therefore, both fields of science and technology could learn from eachother, which has not been fully explored. On the other hand, there aresignificant differences, too. Most importantly, the operation of HIPIMSheavilyrelies on the presence of a strong magnetic field, confiningelectrons and causing their ExB drift, which is closed for typicalmagnetron configurations. Second, at the high peak power levels used forHIPIMS, 1 kW/cm2 or greater averaged over the target area, the sputteredmaterial greatly affects plasma generation. For PBIID, in contrast,plasma generation and ion processing of the surface (ion implantation,etching, and deposition) are considered rela-tively independentprocesses. Third, secondary electron emission is generally considered anuisance for PBIID, especially at high voltages, whereas it is a criticalingredient to the operation of HIPIMS. Fourth, the voltages in PBIID areoften higher than in HIPIMS. For the first three reasons listed above,modelling of PBIID seems to be easier and could give some guidance forfuture HIPIMS models, which, clearly, will be more involved.

  7. Film Characteristics of Low-Temperature Plasma-Enhanced Chemical Vapor Deposition Silicon Dioxide Using Tetraisocyanatesilane and Oxygen

    NASA Astrophysics Data System (ADS)

    Idris, Irman; Sugiura, Osamu

    1998-12-01

    Silicon dioxide films were deposited in a parallel-plate electrode RF plasma-enhanced chemical vapor deposition (PECVD) system using hydrogen-free tetraisocyanatesilane (TICS) and oxygen. The deposition parameters were varied systematically, and the films were characterized by measuring infrared spectra, density, etch rate, refractive index, and current-voltage (I V) and capacitance-voltage (C V) characteristics, as well as by examining their annealing behavior. At 300°C and a TICS partial pressure ratio of 20%, a water-free and hydroxyl-group-free SiO2 film was obtained. The film density, BHF etch rate, refractive index, resistivity, and dielectric constant were 2.3 g/cm3, 330 nm/min, 1.46, 7×1015 Ω·cm, and 3.6, respectively. The film quality degraded and, simultaneously, the film absorbed moisture from the atmosphere with decreasing deposition temperature; however, the quality can be improved by reducing TICS partial pressure. SiO2 films could be deposited even at 15°C, and had a resistivity of about 1013Ω·cm. Infrared measurements showed that SiO2 films deposited from TICS/O2 contained less absorbed water than those deposited from hydrogen-containing source materials at the same deposition temperature.

  8. Effect of hydrogen peroxide pretreatment on ZnO-based metal–semiconductor–metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition

    SciTech Connect

    Lin, Yu-Chang; Lee, Hsin-Ying; Lee, Tsung-Hsin

    2016-01-15

    In this study, zinc oxide (ZnO) films were deposited on sapphire substrates using a plasma-enhanced atomic layer deposition system. Prior to deposition, the substrates were treated with hydrogen peroxide (H{sub 2}O{sub 2}) in order to increase nucleation on the initial sapphire surface and, thus, enhance the quality of deposited ZnO films. Furthermore, x-ray diffraction spectroscopy measurements indicated that the crystallinity of ZnO films was considerably enhanced by H{sub 2}O{sub 2} pretreatment, with the strongest (002) diffraction peak occurring for the film pretreated with H{sub 2}O{sub 2} for 60 min. X-ray photoelectron spectroscopy also was used, and the results indicated that a high number of Zn–O bonds was generated in ZnO films pretreated appropriately with H{sub 2}O{sub 2}. The ZnO film deposited on a sapphire substrate with H{sub 2}O{sub 2} pretreatment for 60 min was applied to metal–semiconductor–metal ultraviolet photodetectors (MSM-UPDs) as an active layer. The fabricated ZnO MSM-UPDs showed improvements in dark current and ultraviolet–visible rejection ratios (0.27 μA and 1.06 × 10{sup 3}, respectively) compared to traditional devices.

  9. Effects of copper-plasma deposition on weathering properties of wood surfaces

    NASA Astrophysics Data System (ADS)

    Gascón-Garrido, P.; Mainusch, N.; Militz, H.; Viöl, W.; Mai, C.

    2016-03-01

    Thin layers of copper micro-particles were deposited on the surfaces of Scots pine (Pinus sylvestris L.) micro-veneers using atmospheric pressure plasma to improve the resistance of the surfaces to weathering. Three different loadings of copper were established. Micro-veneers were exposed to artificial weathering in a QUV weathering tester for 0, 24, 48, 96 and 144 h following the standard EN 927-6 [1]. Mass losses after each exposure showed significant differences between copper coated and untreated micro-veneers. Tensile strength was assessed at zero span (z-strength) and finite span (f-strength) under dry conditions (20 °C, 65% RH). During 48 h, micro-veneers lost their z-strength progressively. In contrast, copper coating at highest loading imparts a photo-protective effect to wood micro-veneers during 144 h exhibiting z-strength retention of 95%. F-strength losses were similar in all copper treated and untreated micro-veneers up to 96 h. However, after 144 h, copper coated micro-veneers at highest loading showed significantly greater strength retention of 56%, while untreated micro-veneers exhibited only 38%. Infrared spectroscopy suggested that copper coating does not stabilize lignin. Inductively Coupled Plasma revealed that micro-veneers coated with the highest loading exhibited the lowest percentage of copper loss. Blue stain resistance of copper coated Scots pine following the guidelines of EN 152 [2] was performed. Additional test with different position of the coated surface was also assessed. Copper coating reduced fungal growth when coated surface is exposed in contact with vermiculite. Spores of Aureobasidium pullulans were not able to germinate on the copper coated surface positioned uppermost.

  10. Modeling hydrodynamic flows in plasma fluxes when depositing metal layer on the surface of catalyst converters

    NASA Astrophysics Data System (ADS)

    Chinakhov, D. A.; Sarychev, V. D.; Granovsky, A. Yu; Solodsky, S. A.; Nevsky, S. A.; Konovalov, S. V.

    2017-01-01

    Air pollution with harmful substances resulting from combustion of liquid hydrocarbons and emitted into atmosphere became one of the global environmental problems in the late 20th century. The systems of neutralization capable to reduce toxicity of exhaust gases several times are very important for making environmentally safer combustion products discharged into the atmosphere. As revealed in the literature review, one of the most promising purification procedures is neutralization of burnt gases by catalyst converter systems. The principal working element in the converter is a catalytic layer of metals deposited on ceramics, with thickness 20-60 micron and a well-developed micro-relief. The paper presents a thoroughly substantiated new procedure of deposing a nano-scale surface layer of metal-catalyst particles, furthering the utilization of catalysts on a new level. The paper provides description of mathematical models and computational researches into plasma fluxes under high-frequency impulse input delivered to electrode material, explorations of developing Kelvin-Helmholtz, Marangoni and magnetic hydrodynamic instabilities on the surface of liquid electrode metal droplet in the nano-scale range of wavelengths to obtain a flow of nano-meter particles of cathode material. The authors have outlined a physical and mathematical model of magnetic and hydrodynamic instability for the case of melt flowing on the boundary with the molten metal with the purpose to predict the interphase shape and mutual effect of formed plasma jet and liquid metal droplet on the electrode in the nano-scale range of wavelengths at high-frequency impact on the boundary “electrode-liquid layer”.

  11. Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

    SciTech Connect

    Lee, Byung Kook; Jung, Eunae; Kim, Seok Hwan; Moon, Dae Chul; Lee, Sun Sook; Park, Bo Keun; Hwang, Jin Ha; Chung, Taek-Mo; Kim, Chang Gyoun; An, Ki-Seok

    2012-10-15

    Thin film transistors (TFTs) with tin oxide films as the channel layer were fabricated by means of plasma enhanced atomic layer deposition (PE-ALD). The as-deposited tin oxide films show n-type conductivity and a nano-crystalline structure of SnO{sub 2}. Notwithstanding the relatively low deposition temperatures of 70, 100, and 130 °C, the bottom gate tin oxide TFTs show an on/off drain current ratio of 10{sup 6} while the device mobility values were increased from 2.31 cm{sup 2}/V s to 6.24 cm{sup 2}/V s upon increasing the deposition temperature of the tin oxide films.

  12. Plasma and ion beam enhanced chemical vapour deposition of diamond and diamond-like carbon

    NASA Astrophysics Data System (ADS)

    Tang, Yongji

    WC-Co cutting tools are widely used in the machining industry. The application of diamond coatings on the surfaces of the tools would prolong the cutting lifetime and improves the manufacturing efficiency. However, direct chemical vapor deposition (CVD) of diamond coatings on WC-Co suffer from severe premature adhesion failure due to interfacial graphitization induced by the binder phase Co. In this research, a combination of hydrochloric acid (HCl) and hydrogen (H2) plasma pretreatments and a novel double interlayer of carbide forming element (CFE)/Al were developed to enhance diamond nucleation and adhesion. The results showed that both the pretreatments and interlayers were effective in forming continuous and adhesive nanocrystalline diamond coatings. The method is a promising replacement of the hazardous Murakami's regent currently used in WC-Co pretreatment with a more environmental friendly approach. Apart from coatings, diamond can be fabricated into other forms of nanostructures, such as nanotips. In this work, it was demonstrated that oriented diamond nanotip arrays can be fabricated by ion beam etching of as-grown CVD diamond. The orientation of diamond nanotips can be controlled by adjusting the direction of incident ion beam. This method overcomes the limits of other techniques in producing nanotip arrays on large areas with controlled orientation. Oriented diamond nano-tip arrays have been used to produce anisotropic frictional surface, which is successfully used in ultra-precision positioning systems. Diamond-like carbon (DLC) has many properties comparable to diamond. In this thesis, the preparation of alpha-C:H thin films by end-Hall (EH) ion source and the effects of ion energy and nitrogen doping on the microstructure and mechanical properties of the as-deposited thin films were investigated. The results have demonstrated that smooth and uniform alpha-C:H and alpha-C:H:N films with large area and reasonably high hardness and Young's modulus can be

  13. Kinetic Monte Carlo simulations of surface growth during plasma deposition of silicon thin films

    NASA Astrophysics Data System (ADS)

    Pandey, Sumeet C.; Singh, Tejinder; Maroudas, Dimitrios

    2009-07-01

    Based on an atomically detailed surface growth model, we have performed kinetic Monte Carlo (KMC) simulations to determine the surface chemical composition of plasma deposited hydrogenated amorphous silicon (a-Si:H) thin films as a function of substrate temperature. Our surface growth kinetic model consists of a combination of various surface rate processes, including silyl (SiH3) radical chemisorption onto surface dangling bonds or insertion into Si-Si surface bonds, SiH3 physisorption, SiH3 surface diffusion, abstraction of surface H by SiH3 radicals, surface hydride dissociation reactions, as well as desorption of SiH3, SiH4, and Si2H6 species into the gas phase. Transition rates for the adsorption, surface reaction and diffusion, and desorption processes accounted for in the KMC simulations are based on first-principles density-functional-theory computations of the corresponding optimal pathways on the H-terminated Si(001)-(2×1) surface. Results are reported for two types of KMC simulations. The first employs a fully ab initio database of activation energy barriers for the surface rate processes involved and is appropriate for modeling the early stages of growth. The second uses approximate rates for all the relevant processes to account properly for the effects on the activation energetics of interactions between species adsorbed at neighboring surface sites and is appropriate to model later stages of growth toward a steady state of the surface composition. The KMC predictions for the temperature dependence of the surface concentration of SiHx(s) (x =1,2,3) species, the surface hydrogen content, and the surface dangling-bond coverage are compared to experimental measurements on a-Si:H films deposited under operating conditions for which the SiH3 radical is the dominant deposition precursor. The predictions of both KMC simulation types are consistent with the reported experimental data, which are based on in situ attenuated total reflection Fourier transformed

  14. Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Dendooven, Jolien; Solano, Eduardo; Minjauw, Matthias M.; Van de Kerckhove, Kevin; Coati, Alessandro; Fonda, Emiliano; Portale, Giuseppe; Garreau, Yves; Detavernier, Christophe

    2016-11-01

    We report the design of a mobile setup for synchrotron based in situ studies during atomic layer processing. The system was designed to facilitate in situ grazing incidence small angle x-ray scattering (GISAXS), x-ray fluorescence (XRF), and x-ray absorption spectroscopy measurements at synchrotron facilities. The setup consists of a compact high vacuum pump-type reactor for atomic layer deposition (ALD). The presence of a remote radio frequency plasma source enables in situ experiments during both thermal as well as plasma-enhanced ALD. The system has been successfully installed at different beam line end stations at the European Synchrotron Radiation Facility and SOLEIL synchrotrons. Examples are discussed of in situ GISAXS and XRF measurements during thermal and plasma-enhanced ALD growth of ruthenium from RuO4 (ToRuS™, Air Liquide) and H2 or H2 plasma, providing insights in the nucleation behavior of these processes.

  15. Thermal Shock Properties of Yttria-Stabilized Zirconia Coatings Deposited Using Low-Energy Very Low Pressure Plasma Spraying

    NASA Astrophysics Data System (ADS)

    Zhu, Lin; Zhang, Nannan; Bolot, Rodolphe; Liao, Hanlin; Coddet, Christian

    2015-08-01

    Yttria-stabilized zirconia (YSZ) coatings have been frequently used as a thermal protective layer on the metal or alloy component surfaces. In the present study, ZrO2-7%Y2O3 thermal barrier coatings (TBCs) were successfully deposited by DC (direct current) plasma spray process under very low pressure conditions (less than 1 mbar) using low-energy plasma guns F4-VB and F100. The experiments were performed to evaluate the thermal shock resistance of different TBC specimens which were heated to 1373 K at a high-temperature cycling furnace and held for 0.5 h, followed by air cooling at room temperature for 0.2 h. For comparison, a corresponding atmospheric plasma spray (APS) counterpart was also elaborated to carry out the similar experiments. The results indicated that the very low pressure plasma spray (VLPPS) coatings displayed better thermal shock resistance. Moreover, the failure mechanism of the coatings was elucidated.

  16. Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition.

    PubMed

    Dendooven, Jolien; Solano, Eduardo; Minjauw, Matthias M; Van de Kerckhove, Kevin; Coati, Alessandro; Fonda, Emiliano; Portale, Giuseppe; Garreau, Yves; Detavernier, Christophe

    2016-11-01

    We report the design of a mobile setup for synchrotron based in situ studies during atomic layer processing. The system was designed to facilitate in situ grazing incidence small angle x-ray scattering (GISAXS), x-ray fluorescence (XRF), and x-ray absorption spectroscopy measurements at synchrotron facilities. The setup consists of a compact high vacuum pump-type reactor for atomic layer deposition (ALD). The presence of a remote radio frequency plasma source enables in situ experiments during both thermal as well as plasma-enhanced ALD. The system has been successfully installed at different beam line end stations at the European Synchrotron Radiation Facility and SOLEIL synchrotrons. Examples are discussed of in situ GISAXS and XRF measurements during thermal and plasma-enhanced ALD growth of ruthenium from RuO4 (ToRuS™, Air Liquide) and H2 or H2 plasma, providing insights in the nucleation behavior of these processes.

  17. Deposition and composition-control of Mn-doped ZnO thin films by combinatorial pulsed laser deposition using two delayed plasma plumes

    SciTech Connect

    Sanchez-Ake, C.; Camacho, R.; Moreno, L.

    2012-08-15

    Thin films of ZnO doped with manganese were deposited by double-beam, combinatorial pulsed laser deposition. The laser-induced plasmas were studied by means of fast photography and using a Langmuir probe, whereas the films were analyzed by x-ray-diffraction and energy-dispersive x-ray spectroscopy. The effect of the relative delay between plasma plumes on the characteristics of the films was analyzed. It was found that using this parameter, it is possible to control the dopant content keeping the oriented wurtzite structure of the films. The minimum content of Mn was found for plume delays between 0 and 10 {mu}s as the interaction between plasmas scatters the dopant species away from the substrate, thus reducing the incorporation of Mn into the films. Results suggest that for delays shorter than {approx}100 {mu}s, the expansion of the second plume through the region behind the first plume affects the composition of the film.

  18. Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

    SciTech Connect

    Ruppalt, Laura B. Cleveland, Erin R.; Champlain, James G.; Bennett, Brian R.; Prokes, Sharka M.

    2014-12-15

    In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD) high-k dielectric stacks with device-quality p-type GaSb(001) epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H{sub 2}/Ar plasma treatment and subsequently removed to air. High-k HfO{sub 2} and Al{sub 2}O{sub 3}/HfO{sub 2} bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS) capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H{sub 2}-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H{sub 2}-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

  19. Characterization of plasma-enhanced atomic layer deposition of Al{sub 2}O{sub 3} using dimethylaluminum isopropoxide

    SciTech Connect

    Yang, Jialing; Eller, Brianna S.; Nemanich, Robert J.; Kaur, Manpuneet

    2014-03-15

    In this research, Al{sub 2}O{sub 3} films were grown by remote plasma-enhanced atomic layer deposition using a nonpyrophoric precursor, dimethylaluminum isopropoxide (DMAI), and oxygen plasma. After optimization, the growth rate was determined to be ∼1.5 Å/cycle within a growth window of 25–220 °C; the higher growth rate than reported for thermal atomic layer deposition was ascribed to the higher reactivity of the plasma species compared with H{sub 2}O and the adsorption of active oxygen at the surface, which was residual from the oxygen plasma exposure. Both effects enhance DMAI chemisorption and increase the saturation density. In addition, a longer oxygen plasma time was required at room temperature to complete the reaction and decrease the carbon contamination below the detection limit of x-ray photoemission spectroscopy. The properties of the subsequent Al{sub 2}O{sub 3} films were measured for different temperatures. When deposited at 25 °C and 200 °C, the Al{sub 2}O{sub 3} films demonstrated a single Al-O bonding state as measured by x-ray photoemission spectroscopy, a similar band gap of 6.8±0.2 eV as determined by energy loss spectroscopy, a similar index of refraction of 1.62±0.02 as determined by spectroscopic ellipsometry, and uniform growth with a similar surface roughness before and after growth as confirmed by atomic force microscopy. However, the room temperature deposited Al{sub 2}O{sub 3} films had a lower mass density (2.7 g/cm{sup 3} compared with 3.0 g/cm{sup 3}) and a higher atomic ratio of O to Al (2.1 compared with 1.6) as indicated by x-ray reflectivity and Rutherford backscattering spectroscopy, respectively.

  20. Co-deposition of titanium and iron nitrides on SS-321 by using plasma focus

    NASA Astrophysics Data System (ADS)

    Ahmad, R.; Hassan, M.; Murtaza, G.; Akhter, J. I.; Qayyum, A.; Waheed, A.; Zakaullah, M.

    2006-02-01

    This article reports the co-deposition process of TiN0.9 and (Fe,Cr)(2)N compounds on SS-321 substrate using a 2.3 kJ dense plasma focus device operated with N-2 discharges. X-ray diffraction analysis is performed to investigate the ion-induced changes in the near surface structure of the SS-321. Scanning electron microscopy with the energy dispersive X-ray spectroscopy is carried out to analyse the surface morphology and the elemental composition of the nitrided samples. The results reveal that at the low fluence of ion bombardment, a non-stoichiometric tertiary phase (Fe,Cr)(x)N is developed, which transforms into a stable stoichiometric compound (Fe,Cr)(2)N by increasing the ion flux. Some CrN precipitates are also observed because of the thermal effect produced by the bombardment of energetic ion beam. Vickers micro-hardness values are increased more than twice for typical ion nitrided samples.

  1. Thermal conductivities of nanostructured magnesium oxide coatings deposited on magnesium alloys by plasma electrolytic oxidation.

    PubMed

    Shen, Xinwei; Nie, Xueyuan; Hu, Henry

    2014-10-01

    The resistances of magnesium alloys to wear, friction and corrosion can be effectively improved by depositing coatings on their surfaces. However, the coatings can also reduce the heat transfer from the coated components to the surroundings (e.g., coated cylinder bores for internal combustion of engine blocks). In this paper, nanostructured magnesium oxides were produced by plasma electrolytic oxidation (PEO) process on the magnesium alloy AJ62 under different current densities. The guarded comparative heat flow method was adopted to measure the thermal conductivities of such coatings which possess gradient nanoscale grain sizes. The aim of the paper is to explore how the current density in the PEO process affects the thermal conductivity of the nanostructured magnesium coatings. The experimental results show that, as the current density rises from 4 to 20 A/mm2, the thermal conductivity has a slight increase from 0.94 to 1.21 W/m x K, which is significantly smaller than that of the corresponding bulk magnesium oxide materials (29.4 W/m x K). This mostly attributed to the variation of the nanoscale grain sizes of the PEO coatings.

  2. Boron nitride nanowalls: low-temperature plasma-enhanced chemical vapor deposition synthesis and optical properties.

    PubMed

    Merenkov, Ivan S; Kosinova, Marina L; Maximovskii, Eugene A

    2017-05-05

    Hexagonal boron nitride (h-BN) nanowalls (BNNWs) were synthesized by plasma-enhanced chemical vapor deposition (PECVD) from a borazine (B3N3H6) and ammonia (NH3) gas mixture at a low temperature range of 400 °C-600 °C on GaAs(100) substrates. The effect of the synthesis temperature on the structure and surface morphology of h-BN films was investigated. The length and thickness of the h-BN nanowalls were in the ranges of 50-200 nm and 15-30 nm, respectively. Transmission electron microscope images showed the obtained BNNWs were composed of layered non-equiaxed h-BN nanocrystallites 5-10 nm in size. The parallel-aligned h-BN layers as an interfacial layer were observed between the film and GaAs(100) substrate. BNNWs demonstrate strong blue light emission, high transparency (>90%) both in visible and infrared spectral regions and are promising for optical applications. The present results enable a convenient growth of BNNWs at low temperatures.

  3. Molecular plasma deposition: biologically inspired nanohydroxyapatite coatings on anodized nanotubular titanium for improving osteoblast density

    PubMed Central

    Balasundaram, Ganesan; Storey, Daniel M; Webster, Thomas J

    2015-01-01

    In order to begin to prepare a novel orthopedic implant that mimics the natural bone environment, the objective of this in vitro study was to synthesize nanocrystalline hydroxyapatite (NHA) and coat it on titanium (Ti) using molecular plasma deposition (MPD). NHA was synthesized through a wet chemical process followed by a hydrothermal treatment. NHA and micron sized hydroxyapatite (MHA) were prepared by processing NHA coatings at 500°C and 900°C, respectively. The coatings were characterized before and after sintering using scanning electron microscopy, atomic force microscopy, and X-ray diffraction. The results revealed that the post-MPD heat treatment of up to 500°C effectively restored the structural and topographical integrity of NHA. In order to determine the in vitro biological responses of the MPD-coated surfaces, the attachment and spreading of osteoblasts (bone-forming cells) on the uncoated, NHA-coated, and MHA-coated anodized Ti were investigated. Most importantly, the NHA-coated substrates supported a larger number of adherent cells than the MHA-coated and uncoated substrates. The morphology of these cells was assessed by scanning electron microscopy and the observed shapes were different for each substrate type. The present results are the first reports using MPD in the framework of hydroxyapatite coatings on Ti to enhance osteoblast responses and encourage further studies on MPD-based hydroxyapatite coatings on Ti for improved orthopedic applications. PMID:25609958

  4. Reactive impulse plasma ablation deposited barium titanate thin films on silicon

    NASA Astrophysics Data System (ADS)

    Werbowy, A.; Firek, P.; Kwietniewski, N.; Olszyna, A.

    2013-07-01

    Thin (100 nm) nanocrystalline dielectric films of lanthanum doped barium titanate were produced on Si substrates by means of reactive impulse plasma ablation deposition (IPD) from BaTiO3 + La2O3 (2 wt.%) target. Scanning electron microcopy and atomic force microscopy showed that the obtained layers were dense ceramics of uniform thickness with average roughness Ra = 2.045 nm and the average grain size of the order of 15 nm. Measurements of current-voltage (IV) characteristics of metal-insulator-semiconductor (MIS) structures, produced by evaporation of metal (Al) electrodes on top of barium titanate films, allowed to determine that the leakage current density and critical electric field intensity (EBR) of investigated layers ranged from 10-12 to 10-6 A cm-2 and from 0.2 to 0.5 MV cm-1, respectively. Capacitance-voltage (C-V) measurements of the same structures were performed in accumulation state showing that the dielectric constant value (ɛri) of films is of the order of 20.

  5. Molecular plasma deposition: biologically inspired nanohydroxyapatite coatings on anodized nanotubular titanium for improving osteoblast density.

    PubMed

    Balasundaram, Ganesan; Storey, Daniel M; Webster, Thomas J

    2015-01-01

    In order to begin to prepare a novel orthopedic implant that mimics the natural bone environment, the objective of this in vitro study was to synthesize nanocrystalline hydroxyapatite (NHA) and coat it on titanium (Ti) using molecular plasma deposition (MPD). NHA was synthesized through a wet chemical process followed by a hydrothermal treatment. NHA and micron sized hydroxyapatite (MHA) were prepared by processing NHA coatings at 500°C and 900°C, respectively. The coatings were characterized before and after sintering using scanning electron microscopy, atomic force microscopy, and X-ray diffraction. The results revealed that the post-MPD heat treatment of up to 500°C effectively restored the structural and topographical integrity of NHA. In order to determine the in vitro biological responses of the MPD-coated surfaces, the attachment and spreading of osteoblasts (bone-forming cells) on the uncoated, NHA-coated, and MHA-coated anodized Ti were investigated. Most importantly, the NHA-coated substrates supported a larger number of adherent cells than the MHA-coated and uncoated substrates. The morphology of these cells was assessed by scanning electron microscopy and the observed shapes were different for each substrate type. The present results are the first reports using MPD in the framework of hydroxyapatite coatings on Ti to enhance osteoblast responses and encourage further studies on MPD-based hydroxyapatite coatings on Ti for improved orthopedic applications.

  6. Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Liu, Dan; Gou, Li; Ran, Junguo; Zhu, Hong; Zhang, Xiang

    2015-07-01

    Boron-doped nanocrystalline diamond (NCD) exhibits extraordinary mechanical properties and chemical stability, making it highly suitable for biomedical applications. For implant materials, the impact of boron-doped NCD films on the character of cell growth (i.e., adhesion, proliferation) is very important. Boron-doped NCD films with resistivity of 10-2 Ω·cm were grown on Si substrates by the microwave plasma chemical vapor deposition (MPCVD) process with H2 bubbled B2O3. The crystal structure, diamond character, surface morphology, and surface roughness of the boron-doped NCD films were analyzed using different characterization methods, such as X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The contact potential difference and possible boron distribution within the film were studied with a scanning kelvin force microscope (SKFM). The cytotoxicity of films was studied by in vitro tests, including fluorescence microscopy, SEM and MTT assay. Results indicated that the surface roughness value of NCD films was 56.6 nm and boron was probably accumulated at the boundaries between diamond agglomerates. MG-63 cells adhered well and exhibited a significant growth on the surface of films, suggesting that the boron-doped NCD films were non-toxic to cells. supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (University of Electronic Science and Technology of China) (No. KFJJ201313)

  7. Hemocompatibility of titanium-based coatings prepared by metal plasma immersion ion implantation and deposition

    NASA Astrophysics Data System (ADS)

    Tsyganov, I. A.; Maitz, M. F.; Richter, E.; Reuther, H.; Mashina, A. I.; Rustichelli, F.

    2007-04-01

    Metal plasma immersion ion implantation and deposition (MePIIID) has been proved to be an effective approach to enhance surface properties of various types of materials. In this work structure, phase composition, microhardness and surface properties, such as wettability and surface energy of layers of the ternary system Ti-N-O produced by MePIIID were investigated. To study the correlation between structure of coating and hemocompatibility the thrombocyte adhesion as well as the fibrinogen adsorption on the surface were measured. The blood compatibility of Ti oxide can be improved by the addition of nitrogen into the layer. The thrombocyte adhesion and fibrinogen adsorption were lower for TiNxOy than for TiO2. This correlates with a lower hydrophobicity and higher polar component of the surface energy for TiNxOy. The best hemocompatibility as well as the maximal microhardness have been found for the coating TiN0.4O1.6.

  8. Microwave plasma-assisted chemical vapor deposition of porous carbon film as supercapacitive electrodes

    NASA Astrophysics Data System (ADS)

    Wu, Ai-Min; Feng, Chen-Chen; Huang, Hao; Paredes Camacho, Ramon Alberto; Gao, Song; Lei, Ming-Kai; Cao, Guo-Zhong

    2017-07-01

    Highly porous carbon film (PCF) coated on nickel foam was prepared successfully by microwave plasma-assisted chemical vapor deposition (MPCVD) with C2H2 as carbon source and Ar as discharge gas. The PCF is uniform and dense with 3D-crosslinked nanoscale network structure possessing high degree of graphitization. When used as the electrode material in an electrochemical supercapacitor, the PCF samples verify their advantageous electrical conductivity, ion contact and electrochemical stability. The test results show that the sample prepared under 1000 W microwave power has good electrochemical performance. It displays the specific capacitance of 62.75 F/g at the current density of 2.0 A/g and retains 95% of its capacitance after 10,000 cycles at the current density of 2.0 A/g. Besides, its near-rectangular shape of the cyclic voltammograms (CV) curves exhibits typical character of an electric double-layer capacitor, which owns an enhanced ionic diffusion that can fit the requirements for energy storage applications.

  9. Thermal Conductivity of Nanocrystalline Silicon Prepared by Plasma-Enhanced Chemical-Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Jugdersuren, Battogtokh; Liu, Xiao; Kearney, Brian; Queen, Daniel; Metcalf, Thomas; Culbertson, James; Chervin, Christopher; Katz, Michael; Stroud, Rhonda

    Nanocrystallization by ball milling has been used successfully to reduce the thermal conductivity of silicon-germanium alloys (SiGe) and turn them into useful thermoelectric materials at a temperature of a few hundred degrees C. Currently the smallest grain sizes in nanocrystalline SiGe are in the 10 nm range. Germanium is added to scatter short wavelength phonons by impurity scattering. In this work, we report a record low thermal conductivity in nanocrystalline silicon prepared by plasma-enhanced chemical-vapor deposition. By varying hydrogen to silane ratio, we can vary the average grain sizes from greater than 10 nm down to 3 nm, as determined by both the high resolution transmission electron microscopy and X-ray diffraction. The values of thermal conductivity, as measured by the 3 ω technique, can be correspondingly modulated from that of ball-milled nanocrystalline SiGe to a record low level of 0.3 W/mK at room temperature. This low thermal conductivity is only about 1/3 of the minimum thermal conductivity limit of silicon. Possible causes of such a large reduction are discussed. Work supported by the Office of Naval Research.

  10. Heteroepitaxial growth of wafer scale highly oriented graphene using inductively coupled plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gao, Libo; Xu, Hai; Li, Linjun; Yang, Yang; Fu, Qiang; Bao, Xinhe; Loh, Kian Ping

    2016-06-01

    The chemical vapor deposition (CVD) of graphene on Cu has attracted much attention because of its industrial scalability. Herein, we report inductively coupled plasma-assisted CVD of epitaxially grown graphene on (111)-textured Cu film alloyed with a small amount of Ni, where large area high quality graphene film can be grown in less than 5 min at 800 °C, thus affording industrial scalability. The epitaxially grown graphene films on (111)-textured Cu contain grains which are predominantly aligned with the Cu lattice and about 10% of 30°-rotated grains (anti-grains). Such graphene films are exclusively monolayer and possess good electrical conductivity, high carrier mobility, and room temperature quantum Hall effect. Magnetoresistance measurements reveal that the reduction of the grain sizes from 150 nm to 50 nm produce increasing Anderson localization and the appearance of a transport gap. Owing to the presence of grain boundaries in these anti-grains, epitaxially grown graphene films possess n-type characteristics and exhibit ultra-high sensitivity to adsorbates.

  11. Surface modification of biomaterials using plasma immersion ion implantation and deposition

    PubMed Central

    Lu, Tao; Qiao, Yuqin; Liu, Xuanyong

    2012-01-01

    Although remarkable progress has been made on biomaterial research, the ideal biomaterial that satisfies all the technical requirements and biological functions is not available up to now. Surface modification seems to be a more economic and efficient way to adjust existing conventional biomaterials to meet the current and ever-evolving clinical needs. From an industrial perspective, plasma immersion ion implantation and deposition (PIII&D) is an attractive method for biomaterials owing to its capability of treating objects with irregular shapes, as well as the control of coating composition. It is well acknowledged that the physico-chemical characteristics of biomaterials are the decisive factors greatly affecting the biological responses of biomaterials including bioactivity, haemocompatibility and antibacterial activity. Here, we mainly review the recent advances in surface modification of biomaterials via PIII&D technology, especially titanium alloys and polymers used for orthopaedic, dental and cardiovascular implants. Moreover, the variations of biological performances depending on the physico-chemical properties of modified biomaterials will be discussed. PMID:23741609

  12. Deposition of Chromium Thin Films on Stainless Steel-304 Substrates Using a Low Energy Plasma Focus Device

    NASA Astrophysics Data System (ADS)

    Javadi, S.; Ghoranneviss, M.; Hojabri, A.; Habibi, M.; Hosseinnejad, M. T.

    2012-06-01

    In this paper, we study thin films of chromium deposited on stainless steel-304 substrates using a low energy (1.6 kJ) plasma focus device. The films of chromium are likewise deposited with 25 focus shots each at various axial distances from the top of the anode (3, 5, 7, 9 and 11 cm). We also consider different angular positions with respect to the anode axis (0°, 15° and 30°) at a distance of 5 cm from the anode tip to deposit the chromium films on the stainless steel substrates. To characterize the structural properties of the films, we benefit from X-ray diffraction (XRD) analysis. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) are applied as well to study the surface morphology of these deposited films. Furthermore, we make use of Vicker's micro-hardness measurements to investigate the mechanical properties of chromium thin films. The XRD results show that the degree of crystallinity of chromium thin films depends on the substrate axial and angular positions. The AFM images illustrate that the film deposited at the distance of 5 cm and the angular position of 0° has quite a uniform surface with homogeneous distribution of grains on the film surface. From the hardness results, we observe that the sample deposited at the axial distance of 5 cm from the anode tip and at the angle of 0° with respect to the anode axis, is harder than the other deposited films.

  13. Low temperature deposition of Ga{sub 2}O{sub 3} thin films using trimethylgallium and oxygen plasma

    SciTech Connect

    Donmez, Inci; Ozgit-Akgun, Cagla; Biyikli, Necmi

    2013-01-15

    Gallium oxide (Ga{sub 2}O{sub 3}) thin films were deposited by plasma-enhanced atomic layer deposition (ALD) using trimethylgallium as the gallium precursor and oxygen plasma as the oxidant. A wide ALD temperature window was observed from 100 to 400 Degree-Sign C, where deposition rate was constant at {approx}0.53 A/cycle. X-ray photoelectron spectroscopy survey scans indicated the presence of gallium, oxygen, and carbon elements with concentrations of {approx}36, {approx}51.8, and {approx}12.2 at. %, respectively. As-deposited films were amorphous; upon annealing at 900 Degree-Sign C under N{sub 2} atmosphere for 30 min, polycrystalline {beta}-Ga{sub 2}O{sub 3} phase with a monoclinic crystal structure was obtained. Refractive index and root mean square roughness of the annealed Ga{sub 2}O{sub 3} film were higher than those of the as-deposited due to crystallization.

  14. 2D fluid model analysis for the effect of 3D gas flow on a capacitively coupled plasma deposition reactor

    NASA Astrophysics Data System (ADS)

    Kim, Ho Jun; Lee, Hae June

    2016-06-01

    The wide applicability of capacitively coupled plasma (CCP) deposition has increased the interest in developing comprehensive numerical models, but CCP imposes a tremendous computational cost when conducting a transient analysis in a three-dimensional (3D) model which reflects the real geometry of reactors. In particular, the detailed flow features of reactive gases induced by 3D geometric effects need to be considered for the precise calculation of radical distribution of reactive species. Thus, an alternative inclusive method for the numerical simulation of CCP deposition is proposed to simulate a two-dimensional (2D) CCP model based on the 3D gas flow results by simulating flow, temperature, and species fields in a 3D space at first without calculating the plasma chemistry. A numerical study of a cylindrical showerhead-electrode CCP reactor was conducted for particular cases of SiH4/NH3/N2/He gas mixture to deposit a hydrogenated silicon nitride (SiN x H y ) film. The proposed methodology produces numerical results for a 300 mm wafer deposition reactor which agree very well with the deposition rate profile measured experimentally along the wafer radius.

  15. Nanostructured TaxC interlayer synthesized via double glow plasma surface alloying process for diamond deposition on cemented carbide

    NASA Astrophysics Data System (ADS)

    Rong, Wolong; Hei, Hongjun; Zhong, Qiang; Shen, Yanyan; Liu, Xiaoping; Wang, Xin; Zhou, Bing; He, Zhiyong; Yu, Shengwang

    2015-12-01

    The aim in this work was to improve the adhesion of diamond coating with pre-deposition of a TaxC interlayer on cemented carbide (WC-Co) substrate by double glow plasma surface alloying technique. The following deposition of diamond coating on the interlayer was performed in a microwave plasma chemical vapor deposition (MPCVD) reactor. TaxC interlayer with an inner diffusion layer and an outer deposition layer was composed of Ta2C and TaC nanocrystalline, and it exhibited a special compact surface morphology formed of flower-shaped pits. As the gradual element distributions existed in the diffusion layer, the interlayer displayed a superior adherence to the substrate with significantly enhanced surface microhardness to the original substrate. After CVD process, the preferred orientation of TaC changed from (2 2 2) to (2 0 0) plane, and a uniform and tense diamond coating with adhesion referred to class HF 2 at least (Verein Deutscher Ingenieure 3198 norm) was obtained on the interlayered substrate. It indicated that the diffusion of Co was effectively inhibited by the formation of TaxC diffusion-deposition interlayer. The TaxC interlayer is most likely to improve the performance of diamond coatings used in cutting tools.

  16. Metrology and Optical Characterization of Plasma Enhanced Chemical Vapor Deposition, (PECVD), low temperature deposited Amorphous Carbon films

    NASA Astrophysics Data System (ADS)

    Ferrieu, F.; Chaton, C.; Neira, D.; Beitia, C.; Mota, L. Proenca; Papon, A. M.; Tarnowka, A.

    2007-09-01

    Amorphous Carbon films deposited by PECVD (RF) have recently been introduced as a new material for semiconductor processing, e.g. in 193 nm ARC lithography [1] and in the DRAM production [2]. A large amount of literature has already been published on with regard to the applications of this class of material [3]. Hence, it has been reported that Amorphous Carbon films undergo a hydrogen chemical desorption when deposited above 500 °C, together with an amorphous to graphite phase transition. Unfortunately, the intrinsic nature of the amorphous carbons depends strongly upon deposition techniques. Film morphology can be completely different from one case to another since there are so many deposition techniques. Optical characterization of these films has also undergone development for several decades. In Spectroscopic Ellipsometry (SE), several models have been proposed from simple Lorentz oscillators' absorption, toward the Tauc Lorentz or Forhoui Bloomer equations. Nevertheless, none of these models sufficiently quantitatively explain the experimental data. In some cases, a simple `Effective Medium Approximation', (EMA), is able to determine the sp2/sp3 bounds present in the film. However, the validity limitation of this approach remains questionable when considering films in a wide range of film thicknesses. In line, metrology for semiconductor requires robust models, which account for parameters such as temperature deposition, stress and film resistivity as well. Different solutions are investigated from our optical measurements, including a biaxial anisotropy hypothesis, which has been proposed by J. Leng et al. [3] from BPR (Beam Reflectometry Profile) and with SE measurements [4]. Our results are considered, together with other surface analysis techniques (XRD, IR and Raman) and confronted to TEM observations.

  17. Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

    SciTech Connect

    Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A.

    2015-07-28

    Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

  18. Green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition.

    PubMed

    Podhorodecki, A; Zatryb, G; Misiewicz, J; Wojcik, J; Wilson, P R J; Mascher, P

    2012-11-30

    The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford backscattering spectrometry, transmission electron microscopy and Raman scattering. The optical properties were investigated by means of photoluminescence and photoluminescence decay spectroscopy. It was found that both the silicon concentration in the film and the annealing temperature have a strong impact on the terbium emission intensity. In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature.

  19. Green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Podhorodecki, A.; Zatryb, G.; Misiewicz, J.; Wojcik, J.; Wilson, P. R. J.; Mascher, P.

    2012-11-01

    The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford backscattering spectrometry, transmission electron microscopy and Raman scattering. The optical properties were investigated by means of photoluminescence and photoluminescence decay spectroscopy. It was found that both the silicon concentration in the film and the annealing temperature have a strong impact on the terbium emission intensity. In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature.

  20. Reduced chemical warfare agent sorption in polyurethane-painted surfaces via plasma-enhanced chemical vapor deposition of perfluoroalkanes.

    PubMed

    Gordon, Wesley O; Peterson, Gregory W; Durke, Erin M

    2015-04-01

    Perfluoralkalation via plasma chemical vapor deposition has been used to improve hydrophobicity of surfaces. We have investigated this technique to improve the resistance of commercial polyurethane coatings to chemicals, such as chemical warfare agents. The reported results indicate the surface treatment minimizes the spread of agent droplets and the sorption of agent into the coating. The improvement in resistance is likely due to reduction of the coating's surface free energy via fluorine incorporation, but may also have contributing effects from surface morphology changes. The data indicates that plasma-based surface modifications may have utility in improving chemical resistance of commercial coatings.

  1. Numerical analysis of the effect of electrode spacing on deposition rate profiles in a capacitively coupled plasma reactor

    NASA Astrophysics Data System (ADS)

    Kim, Ho Jun; Lee, Hae June

    2016-12-01

    The effect of reactor dimension on deposition rate profiles is analyzed with a two-dimensional (2D) fluid simulation of a capacitively coupled plasma (CCP) reactor to deposit a hydrogenated silicon nitride (SiN x H y ) film with a SiH4/NH3/N2/He gas mixture. We focus on the complex function of electrode spacing to reveal the physical relation between reactor geometry and deposition rate profiles. The simulation demonstrates that the localization of electron density is concentrated close to the powered electrode periphery for electrode spacing of 9 mm. However, the plasma distribution becomes bulk dominated with electrode spacing of 15 mm by relaxing the localization. As a result, the increase in the electrode spacing creates a more uniform electron power density profile, and the deposition rate profile of SiN x H y film changes from convex to concave in a radial direction. The change in the deposition rate profile is validated through comparison with the experimental observation, which agrees well with the simulation results with errors of less than 5%. The deposition rate profile with electrode spacing of 9 mm is very sensitive to the non-uniform gas density condition applied to the showerhead inlet. However, the deposition rate profile with electrode spacing of 15 mm is not sensitive to the inlet gas profile because of the increasing residence time. The increase of the electrode spacing promotes molecule-molecule gas phase reactions and consequently weakens the effect of the inlet boundary condition.

  2. The properties of plasma-enhanced atomic layer deposition (ALD) ZnO thin films and comparison with thermal ALD

    NASA Astrophysics Data System (ADS)

    Kim, Doyoung; Kang, Hyemin; Kim, Jae-Min; Kim, Hyungjun

    2011-02-01

    Zinc oxide (ZnO) thin films were prepared by plasma-enhanced atomic layer deposition (PE-ALD) using oxygen plasma as a reactant and the properties were compared with those of thermal atomic layer deposition (TH-ALD) ZnO thin films. While hexagonal wurzite phase with preferential (0 0 2) orientation was obtained for both cases, significant differences were observed in various aspects of film properties including resistivity values between these two techniques. Photoluminescence (PL) measurements have shown that high resistivity of PE-ALD ZnO thin films is due to the oxygen interstitials at low growth temperature of 200 °C, whose amount decreases with increasing growth temperature. Thin film transistors (TFT) using TH- and PE-ALD ZnO as an active layer were also fabricated and the device properties were evaluated comparatively.

  3. Simultaneous synthesis of nanodiamonds and graphene via plasma enhanced chemical vapor deposition (MW PE-CVD) on copper.

    PubMed

    Gottlieb, Steven; Wöhrl, Nicolas; Schulz, Stephan; Buck, Volker

    2016-01-01

    The simultaneous growth of both nanodiamonds and graphene on copper samples is described for the first time. A PE-CVD process is used to synthesize graphene layers and nanodiamond clusters from a hydrogen/methane gas mixture as it is typically done successfully in thermal CVD processes for graphene synthesis. However, the standard thermal CVD process is not without problems since the deposition of graphene is affected by the evaporation of a notable amount of copper caused by the slow temperature increase typical for thermal CVD resulting in a long process time. In sharp contrast, the synthesis of graphene by PE-CVD can circumvent this problem by substantially shortening the process time at holding out the prospect of a lower substrate temperature. The reduced thermal load and the possibility to industrially scale-up the PE-CVD process makes it a very attractive alternative to the thermal CVD process with respect to the graphene production in the future. Nanodiamonds are synthesized in PE-CVD reactors for a long time because these processes offer a high degree of control over the film's nanostructure and simultaneously providing a significant high deposition rate. To model the co-deposition process, the three relevant macroscopic parameters (pressure, gas mixture and microwave power) are correlated with three relevant process properties (plasma ball size, substrate temperature and C2/Hα-ratio) and the influence on the quality of the deposited carbon allotropes is investigated. For the evaluation of the graphene as well as the nanodiamond quality, Raman spectroscopy used whereas the plasma properties are measured by optical methods. It is found that the diamond nucleation can be influenced by the C2/Hα-ratio in the plasma, while the graphene quality remains mostly unchanged by this parameter. Moreover it is derived from the experimental data that the direct plasma contact with the copper surface is beneficial for the nucleation of the diamond while the growth and

  4. Processing-structure-property relationships of thermal barrier coatings deposited using the solution precursor plasma spray process

    NASA Astrophysics Data System (ADS)

    Xie, Liangde

    This research is intended to develop a novel process, solution-precursor plasma-spray (SPPS), for the deposition of highly durable thermal barrier coatings (TBCs). In the SPPS process a solution precursor feedstock, that results in ZrO2-7 wt% Y2O3 ceramic, is injected into the plasma jet and the coating is deposited on a metal substrate. The formed coating has the following novel microstructural features: (i) ultra-fine splats, (ii) through-thickness cracks, (iii) micrometer and nanometer porosity, and (iv) interpass boundaries. The deposition mechanisms of the solution precursor droplets injected into the different regions of the plasma jet were found to be different due to large temperature variation across the plasma jet. The solution precursor droplets injected into the core of the plasma jet are deposited on the substrate as ultra-fine splats that account for around 65 volume% of the coating. The other 35 volume% of the coating includes porosity and deposits formed from the solution precursor droplets injected into other regions of the plasma jet. The optimum processing condition for highly durable TBCs was determined using Taguchi design of experiments. Meanwhile, the relationship of the microstructural features and processing parameters was revealed. During thermal cycling, the unmelted particles in the coating were observed to pyloyze and/or sinter, while no sign of sintering was observed for the ultra-fine splats. The spacing of through-thickness cracks remains in the range of 160 to 190 mum throughout the thermal cycling test. Three stages of oxidation of the bond coat were observed. Failure of the SPPS TBC starts with the crack nucleation along the unmelted particles in the top coat and the Ni, Cr, Co-rich oxides of large thickness. These cracks propagate and coalesce with thermal cycling. The extensive cracking of the rapidly formed Ni, Cr, Co-rich oxides resulting from the depletion of aluminum in the bond coat leads to the development of large

  5. Plasma-deposited beryllium carbide coatings for application to inertial confinement fusion

    NASA Astrophysics Data System (ADS)

    Shih, Wu-Sheng

    Inertial confinement fusion (ICF) is an alternative energy source for the future energy needs in the next century. The materials of the microsphere which confines the D-T fuel inside require high energy transparency (low atomic number, Z), smooth surface, and permeability to Hsb2. Plasma-deposited Be polymer composite coatings with over 50 atomic % of Be and low O content (<5 atomic %) would meet these requirements. Several films with a Be to C atomic ratio of close to 2 to 1 which corresponds to Besb2C with a surface roughness < 100 A and acceptable permeability to Hsb2 were prepared. The coatings were prepared in a rf-induced cylindrical plasma reactor. Diethylberyllium (DEB) was introduced into the reactor as the precursor. Hsb2 was used as the co-reactant for the purpose of reducing internal/compressional stress of the coatings. These coatings were made at substrate temperatures in the range of ambient temperature to 325sp°C with various Hsb2 to DEB flow rate ratios. These coatings have been characterized by AES, XRD, XPS, SEM, AFM, FTIR, electrical resistivity, and TGA. Permeability to Hsb2 through ˜1 mum and ˜5 mum films was also measured. This is the first successful attempt to prepare Besb2C at 250sp°C by PECVD at low pressure as compare to prepare bulk Besb2C at over 1500sp°C by sintering process in a vacuum furnace (<10sp{-4} mmHg). It has been found that the Be content decreases along the distance from the DEB inlet. It has also been confirmed that Besb2C is the dominant phase in these coatings. The Besb2C in these films is resistant to hydrolysis and/or oxidation to dry and moist air in the temperature range of 30sp°C to 250sp°C. It was found that internal/compressional stress is somewhat reduced by introducing Hsb2 into the reactor as a co-reacting gas.

  6. Electrostatic quadrupole plasma mass spectrometer measurements during thin film depositions using simultaneous matrix assisted pulsed laser evaporation and magnetron sputtering

    SciTech Connect

    Hunter, C. N.; Check, M. H.; Muratore, C.; Voevodin, A. A.

    2010-05-15

    A hybrid plasma deposition process, combining matrix assisted pulsed laser evaporation (MAPLE) of carbon nanopearls (CNPs) with magnetron sputtering of gold was investigated for growth of composite films, where 100 nm sized CNPs were encapsulated into a gold matrix. Composition and morphology of such composite films was characterized with x-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy (TEM) analysis. Carbon deposits on a gold magnetron sputter target and carbon impurities in the gold matrices of deposited films were observed while codepositing from gold and frozen toluene-CNP MAPLE targets in pure argon. Electrostatic quadrupole plasma analysis was used to determine that a likely mechanism for generation of carbon impurities was a reaction between toluene vapor generated from the MAPLE target and the argon plasma originating from the magnetron sputtering process. Carbon impurities of codeposited films were significantly reduced by introducing argon-oxygen mixtures into the deposition chamber; reactive oxygen species such as O and O+ effectively removed carbon contamination of gold matrix during the codeposition processes. Increasing the oxygen to argon ratio decreased the magnetron target sputter rate, and hence hybrid process optimization to prevent gold matrix contamination and maintain a high sputter yield is needed. High resolution TEM with energy dispersive spectrometry elemental mapping was used to study carbon distribution throughout the gold matrix as well as embedded CNP clusters. This research has demonstrated that a hybrid MAPLE and magnetron sputtering codeposition process is a viable means for synthesis of composite thin films from premanufactured nanoscale constituents, and that cross-process contaminations can be overcome with understanding of hybrid plasma process interaction mechanisms.

  7. Influence of Cold-Sprayed, Warm-Sprayed, and Plasma-Sprayed Layers Deposition on Fatigue Properties of Steel Specimens

    NASA Astrophysics Data System (ADS)

    Cizek, J.; Matejkova, M.; Dlouhy, I.; Siska, F.; Kay, C. M.; Karthikeyan, J.; Kuroda, S.; Kovarik, O.; Siegl, J.; Loke, K.; Khor, Khiam Aik

    2015-06-01

    Titanium powder was deposited onto steel specimens using four thermal spray technologies: plasma spray, low-pressure cold spray, portable cold spray, and warm spray. The specimens were then subjected to strain-controlled cyclic bending test in a dedicated in-house built device. The crack propagation was monitored by observing the changes in the resonance frequency of the samples. For each series, the number of cycles corresponding to a pre-defined specimen cross-section damage was used as a performance indicator. It was found that the grit-blasting procedure did not alter the fatigue properties of the steel specimens (1% increase as compared to as-received set), while the deposition of coatings via all four thermal spray technologies significantly increased the measured fatigue lives. The three high-velocity technologies led to an increase of relative lives to 234% (low-pressure cold spray), 210% (portable cold spray), and 355% (warm spray) and the deposition using plasma spray led to an increase of relative lives to 303%. The observed increase of high-velocity technologies (cold and warm spray) could be attributed to a combination of homogeneous fatigue-resistant coatings and induction of peening stresses into the substrates via the impingement of the high-kinetic energy particles. Given the intrinsic character of the plasma jet (low-velocity impact of semi/molten particles) and the mostly ceramic character of the coating (oxides, nitrides), a hypothesis based on non-linear coatings behavior is provided in the paper.

  8. Varying stress of SiOxCy thin films deposited by plasma polymerization.

    PubMed

    Liao, Wei-Bo; Chang, Ya-Chen; Jaing, Cheng-Chung; Cheng, Ching-Long; Lee, Cheng-Chung; Wei, Hung-Sen; Kuo, Chien-Cheng

    2017-02-01

    SiOxCy thin films were deposited by plasma polymerization. The stress of the deposited SiOxCy thin films can be modified by adjusting the beam current, the anode voltage, and the flow rate of hexamethyldisiloxane (HMDSO) gas and oxygen. Reducing the beam current or increasing the flow rate of HMDSO gas increased the linear/cage structure ratio and turned the stress of the SiOxCy thin films from compressive to tensile. The linear/cage structure ratio can be adjusted by changing the composite parameter, W[FM]c/[FM]m, to control the stress of the deposited plasma polymer films. Multilayers of TiO2/SiO2/TiO2 were coated on a SiOxCy plasma polymer film herein, reducing their stress by 70% from 0.06 to 0.018 GPa. The refractive index is 1.55, and the absorption coefficient is less than 10-4 at 550 nm of the SiOxCy films. Superior optical performances of SiOxCy thin films make their use in optical thin films.

  9. Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma

    NASA Astrophysics Data System (ADS)

    Goerke, Sebastian; Ziegler, Mario; Ihring, Andreas; Dellith, Jan; Undisz, Andreas; Diegel, Marco; Anders, Solveig; Huebner, Uwe; Rettenmayr, Markus; Meyer, Hans-Georg

    2015-05-01

    Aluminum nitride (AlN) thin films with thicknesses from 20 to 100 nm were deposited on silicon, amorphous silica, silicon nitride, and vitreous carbon by plasma enhanced atomic layer deposition (PE-ALD). Trimethylaluminum (TMA) and a H2/N2 plasma mixture were used as precursors. We investigated the influence of deposition temperature and plasma parameters on the growth characteristics and the film properties of AlN. Stable PE-ALD growth conditions were obtained from 150 °C to the highest tested temperature of 300 °C. The growth rate, refractive index, and thickness homogeneity on 4″ wafers were determined by spectroscopic ellipsometry. X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectrometry (RBS) were carried out to analyze crystallinity and composition of the films. Furthermore, the thermal conductivity and the film stress were determined. The stress was sufficiently low to fabricate mechanically stable free-standing AlN membranes with lateral dimensions of up to 2.2 × 2.2 mm2. The membranes were patterned with focused ion beam etching. Thus, these AlN membranes qualify as dielectric support material for a variety of potential applications.

  10. Characterization of DC magnetron plasma in Ar/Kr/N2 mixture during deposition of (Cr,Al)N coating

    NASA Astrophysics Data System (ADS)

    Bobzin, K.; Bagcivan, N.; Theiß, S.; Brugnara, R.; Bibinov, N.; Awakowicz, P.

    2017-02-01

    Reactive sputter deposition of (Cr,Al)N coatings in DC magnetron plasmas containing Ar/Kr/N2 mixtures is characterized by applying a combination of voltage–current measurement, optical emission spectroscopy (OES) and numerical simulation. Theoretical and experimental methods supplement each other and their combination permits us to obtain the most reliable information about the processes by physical vapor deposition. Gas temperature (T g) and plasma parameters, namely electron density n e and electron temperature T e are determined by spatial resolved measurements of molecular nitrogen photoemission. Steady-state densities of Cr and Al atoms are measured using OES. The sputtering of Cr and Al atoms is simulated using the TRIDYN code, measured electric current and applied voltage. Transport of sputtered atoms through the plasma volume is simulated by adopting a Monte-Carlo code. In order to quantify the ‘poisoning’ of the target surface with nitrogen, simulated steady state densities of Al and Cr atoms at different states of poisoning and at different distances from the target are compared with the measured densities. In addition, simulated fluxes of Cr and Al atoms to the substrate are compared with the measured deposition rates of the (Cr,Al)N coating.

  11. Electron cyclotron resonance plasma assisted pulsed laser deposition for compound host film synthesis and in situ doping

    SciTech Connect

    Lu, Y.F.; Sun, J.; Yu, D.; Shi, L.Q.; Dong, Z.B.; Wu, J.D.

    2006-05-15

    We developed a method for compound host film synthesis and in situ doping based on plasma assisted pulsed laser deposition by coablation of two targets with two pulsed laser beams. The feasibility of this method was demonstrated by the preparation of Er-doped GaN films. In the reactive nitrogen environment and with the assistance of nitrogen plasma generated from electron cyclotron resonance microwave discharge, the ablation of a polycrystalline GaAs target resulted in the reactive deposition of a GaN host film, whereas the ablation of a metallic Er target provided the host with Er atoms for in situ doping in the growing GaN host film. Hexagonal GaN films were formed on a silicon substrate as the host and Er was incorporated into the host with controlled concentration. We found that the composition of the compound host could be adjusted by varying the laser fluence on the target for host deposition or the energy of the plasma stream bombarding the growing host film. The dopant concentration could also be independently controlled to vary in a wide range by changing the pulse repetition ratio of the two laser beams or the laser fluence on the target for dopant supply. It was also proved that doping of very low concentrations could be easily realized by simply adjusting the pulse repetition rate and the fluence of the second laser.

  12. Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing

    NASA Technical Reports Server (NTRS)

    Valco, G. J.; Kapoor, V. J.

    1985-01-01

    The role of GaAs surface cleaning and plasma reactor cleaning prior to deposition of silicon nitride films for encapsulated annealing has been investigated. X-ray photoelectron spectroscopy was employed to determine the surface characteristics of GaAs treated with HCl, HF, and NH4OH solutions preceded by a degreasing procedure. The HCl clean left the least amount of oxygen on the surface. Fluorine contamination resulting from the CF4 plasma used to clean the reactor was found to be located at the film-substrate interface by Auger electron spectroscopy with argon-ion sputtering. A modified deposition procedure was developed to eliminate the fluorine contamination. Plasma deposition of silicon nitride encapsulating films was found to modify the I-V characteristics of Schottky diodes subsequently formed on GaAs surface. The reverse current of the diodes was slightly reduced. Substrates implanted with Si at 100 keV and a dose of 5 x 10 to the 12th/sq cm showed a peak electron concentration of 1.7 x 10 to the 17th/cu cm at a depth of 0.1-micron with 60 percent activation after encapsulation and annealing at 800 C for 7 min.

  13. Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Kawamura, Yumi; Tani, Mai; Hattori, Nozomu; Miyatake, Naomasa; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu

    2012-02-01

    We investigated zinc oxide (ZnO) thin films prepared by plasma assisted atomic layer deposition (PA-ALD), and thin-film transistors (TFTs) with the ALD ZnO channel layer for application to next-generation displays. We deposited the ZnO channel layer by PA-ALD at 100 or 300 °C, and fabricated TFTs. The transfer characteristic of the 300 °C-deposited ZnO TFT exhibited high mobility (5.7 cm2 V-1 s-1), although the threshold voltage largely shifted toward the negative (-16 V). Furthermore, we deposited Al2O3 thin film as a gate insulator by PA-ALD at 100 °C for the low-temperature TFT fabrication process. In the case of ZnO TFTs with the Al2O3 gate insulator, the shift of the threshold voltage improved (-0.1 V). This improvement of the negative shift seems to be due to the negative charges of the Al2O3 film deposited by PA-ALD. On the basis of the experimental results, we confirmed that the threshold voltage of ZnO TFTs is controlled by PA-ALD for the deposition of the gate insulator.

  14. Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Ohmi, Hiromasa; Kakiuchi, Hiroaki; Yasutake, Kiyoshi

    2015-07-01

    The selective deposition of Si films was demonstrated using a chemical sputtering process induced by a high pressure hydrogen plasma at 52.6 kPa (400 Torr). In this chemical sputtering process, the initial deposition rate (Rd) is dependent upon the substrate type. At the initial stage of Si film formation, Rd on glass substrates increased with elapsed time and reached to a constant value. In contrast, Rd on Si substrates remained constant during the deposition. The selective deposition of Si films can be achieved by adjusting the substrate temperature (Tsub) and hydrogen concentration (CH2) in the process atmosphere. For any given deposition time, it was found that an optimum CH2 exists for a given Tsub to realize the selective deposition of a Si film, and the optimum Tsub value tends to increase with decreasing CH2. According to electron diffraction patterns obtained from the samples, the selectively prepared Si films showed epitaxial-like growth, although the Si films contained many defects. It was revealed by Raman scattering spectroscopy that some of the defects in the Si films were platelet defects induced by excess hydrogen incorporated during Si film formation. Raman spectrum also suggested that Si related radicals (SiH2, SiH, Si) with high reactivity contribute to the Si film formation. Simple model was derived as the guideline for achieving the selective growth.

  15. Effect of oxygen plasma on field emission characteristics of single-wall carbon nanotubes grown by plasma enhanced chemical vapour deposition system

    SciTech Connect

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid; Zulfequar, Mohammad; Harsh; Husain, Mushahid

    2014-02-28

    Field emission properties of single wall carbon nanotubes (SWCNTs) grown on iron catalyst film by plasma enhanced chemical vapour deposition system were studied in diode configuration. The results were analysed in the framework of Fowler-Nordheim theory. The grown SWCNTs were found to be excellent field emitters, having emission current density higher than 20 mA/cm{sup 2} at a turn-on field of 1.3 V/μm. The as grown SWCNTs were further treated with Oxygen (O{sub 2}) plasma for 5 min and again field emission characteristics were measured. The O{sub 2} plasma treated SWCNTs have shown dramatic improvement in their field emission properties with emission current density of 111 mA/cm{sup 2} at a much lower turn on field of 0.8 V/μm. The as grown as well as plasma treated SWCNTs were also characterized by various techniques, such as scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy before and after O{sub 2} plasma treatment and the findings are being reported in this paper.

  16. Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

    NASA Astrophysics Data System (ADS)

    Hu, Wen-Juan; Xie, Fen-Yan; Chen, Qiang; Weng, Jing

    2008-10-01

    We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C-O-C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C-O-C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films.

  17. Early apatite deposition and osteoblast growth on plasma-sprayed dicalcium silicate coating.

    PubMed

    Liu, Xuanyong; Xie, Youtao; Ding, Chuanxian; Chu, Paul K

    2005-09-01

    Dicalcium silicate coating was deposited onto a Ti-6Al-4V substrate using plasma-spraying technology. The coating was immersed in simulated body fluid (SBF) for 1, 3, 6, 12, 24, and 48 h to investigate early apatite formation on the coating. Osteoblasts were also seeded onto the surface of the dicalcium silicate coating to evaluate its biocompatibility. Cold field-emission scanning electron microscopy and energy-dispersive X-ray spectrometry were used to evaluate the morphologies and determine the chemical composition of the coatings. The surface structural changes caused by immersion in SBF were analyzed using thin-film X-ray diffraction. After the dicalcium silicate coating was soaked in SBF solution 1-6 h, two types of particles containing calcium and phosphorus were formed on the surface. One type consisted of relatively larger particles (P1) precipitated on the surface of the coating from the precursor cluster formed in the SBF solution. The second type was composed of particles (P2) nucleated on the surface of the coating. With increasing immersion time, the particles coalesced to form a surface Ca-P layer. The Ca-P layer was composed of amorphous calcium phosphate that was not transformed to crystalline apatite until the immersion time in SBF exceeded 24 h. The formation mechanism of the Ca-P layer and apatite on the surface of the coating is believed to be involved in the formation of the Si 3-ring active surface site with negative charge. The cell-seeding test revealed that osteoblasts grew and proliferated very well on the surface of the dicalcium silicate coating.

  18. Automation of a remote plasma-enhanced chemical vapor deposition system using LabVIEW

    NASA Astrophysics Data System (ADS)

    Sharma, Rajan; Fretwell, John L.; Vaihinger, Jochen; Banerjee, Sanjay K.

    1997-08-01

    The remote plasma-enhanced chemical vapor deposition (RPCVD) system is an experimental low temperature Si/Si-Ge epitaxy system. This paper describes an integrated hardware/software automation package developed for the RPCVD system. Aspects of the system controlled by the package include pneumatic gas valves, mass flow controllers (MFCs), and a temperature controller. The package was developed on an Apple Quadra 950 platform using LabVIEWTM 3.1 and associated data acquisition and control hardware supplied by National Instruments and other vendors. The software interface allows the user to operate the system through a virtual control panel which displays critical system parameters such as chamber pressure, chamber temperature and gas flow rates, along with the states of the gas valves and the MFCs. The system can also be run in the recipe mode, in which a sequence of steps are read in from an ExcelTM file. A simulation routine scans each recipe for possible errors such as violation of valve interlocks while the recipe is being loaded. All actions, whether in the manual mode or the recipe mode, are recorded in a log file. Finally, since many of the gases used in the RPCVD process are toxic and/or flammable, there is an emphasis on safety in the entire control scheme. A safety monitor routine constantly checks for valve interlocks and pressure-valve interlocks. Upon detecting an illegal state, it automatically takes necessary action to bring the system into a safe state. In addition to these software safety features, there are also hardware interlocks to deal with such situations as power outages.

  19. Mechanisms and energetics of hydride dissociation reactions on surfaces of plasma-deposited silicon thin films

    NASA Astrophysics Data System (ADS)

    Singh, Tejinder; Valipa, Mayur S.; Mountziaris, T. J.; Maroudas, Dimitrios

    2007-11-01

    We report results from a detailed analysis of the fundamental silicon hydride dissociation processes on silicon surfaces and discuss their implications for the surface chemical composition of plasma-deposited hydrogenated amorphous silicon (a-Si:H) thin films. The analysis is based on a synergistic combination of first-principles density functional theory (DFT) calculations of hydride dissociation on the hydrogen-terminated Si(001)-(2×1) surface and molecular-dynamics (MD) simulations of adsorbed SiH3 radical precursor dissociation on surfaces of MD-grown a-Si :H films. Our DFT calculations reveal that, in the presence of fivefold coordinated surface Si atoms, surface trihydride species dissociate sequentially to form surface dihydrides and surface monohydrides via thermally activated pathways with reaction barriers of 0.40-0.55eV. The presence of dangling bonds (DBs) results in lowering the activation barrier for hydride dissociation to 0.15-0.20eV, but such DB-mediated reactions are infrequent. Our MD simulations on a-Si :H film growth surfaces indicate that surface hydride dissociation reactions are predominantly mediated by fivefold coordinated surface Si atoms, with resulting activation barriers of 0.35-0.50eV. The results are consistent with experimental measurements of a-Si :H film surface composition using in situ attenuated total reflection Fourier transform infrared spectroscopy, which indicate that the a-Si :H surface is predominantly covered with the higher hydrides at low temperatures, while the surface monohydride, SiH(s ), becomes increasingly more dominant as the temperature is increased.

  20. Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

    NASA Astrophysics Data System (ADS)

    Liu, A. Y.; Sun, C.; Markevich, V. P.; Peaker, A. R.; Murphy, J. D.; Macdonald, D.

    2016-11-01

    It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

  1. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOEpatents

    Schmitt, III, Jerome J.; Halpern, Bret L.

    1993-01-01

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

  2. Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

    SciTech Connect

    Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe; Blasco, Nicolas

    2013-03-18

    Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

  3. Cathodic cage plasma deposition of TiN and TiO{sub 2} thin films on silicon substrates

    SciTech Connect

    Sousa, Romulo R. M. de; Sato, Patricia S.; Nascente, Pedro A. P.; Viana, Bartolomeu C.; Alves, Clodomiro; Nishimoto, Akio

    2015-07-15

    Cathodic cage plasma deposition (CCPD) was used for growing titanium nitride (TiN) and titanium dioxide (TiO{sub 2}) thin films on silicon substrates. The main advantages of the CCPD technique are the uniformity, tridimensionality, and high rate of the film deposition that occurs at higher pressures, lower temperatures, and lower treatment times than those used in conventional nitriding treatments. In this work, the influence of the temperature and gas atmosphere upon the characteristics of the deposited films was investigated. The TiN and TiO{sub 2} thin films were characterized by x-ray diffraction, scanning electron microscopy, and Raman spectroscopy to analyze their chemical, structural, and morphological characteristics, and the combination of these results indicates that the low-cost CCPD technique can be used to produce even and highly crystalline TiN and TiO{sub 2} films.

  4. Low-dielectric-constant fluorinated diamond-like carbon thin films by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Yi, Jeong Woo

    Fluorinated amorphous carbon (a-C:F) thin films are developed for a low dielectric constant interlayer dielectric material from hexafluorobenze (C 6F6) or 1,1,1,2-tetrafluoroethane (FCH2CF 4) as the source gas and argon as the diluent gas in an asymmetric capacitively coupled rf (radio frequency) plasma reactor and an inductively coupled plasma reactor. Effects of input rf power, fluorination, applied bias voltage and post annealing on the properties of a-C:F films are investigated. For depositing a-C:F films from highly diluted C6F6 (3%) and argon (97%) in the capacitively rf plasma reactor at 150 mTorr, the dielectric constant of the film increases from 2.0 to 2.8 as the rf power is increased from 10 W to 70 W, while the optical energy gap decreases from 2.6 eV to 1.9 eV and the transparency in a ultra-violet range is degraded. At input power of 100 W, the deposited film exhibits high residual stress of 40 MPa and easily peeled off by a Scotch tape test. This is due to high self-bias voltage (-230 V) developed at the substrate holder during deposition. When depositing amorphous carbon films from tetrafluoroethane (TFE) and methane in the capacitively coupled plasma reactor, the incorporation of fluorine in the film is increased with increasing TFE fraction in the feed gas mixture. The dielectric constant of the a-C:F film deposited from pure TFE is as low as 2.3, but the film exhibits poor thermal stability while a-C:H (diamond-like carbon) film deposited from pure methane has a dielectric constant of 3.8 and shows good thermal stability up to 400°C. As the TFE content in the feed is increased, the dielectric constant and the refractive index decrease while the transparency of the film is enhanced significantly. When depositing a-C:F films from C6F6 (4 sccm) and Ar (5 sccm) in the inductively coupled rf plasma reactor, the bias voltage (from a separate 100 KHz source) applied to the substrate holder affects the film properties significantly. As the negative bias

  5. Exploring the plasma chemistry in microwave chemical vapor deposition of diamond from C/H/O gas mixtures.

    PubMed

    Kelly, Mark W; Richley, James C; Western, Colin M; Ashfold, Michael N R; Mankelevich, Yuri A

    2012-09-27

    Microwave (MW)-activated CH(4)/CO(2)/H(2) gas mixtures operating under conditions relevant to diamond chemical vapor deposition (i.e., X(C/Σ) = X(elem)(C)/(X(elem)(C) + X(elem)(O)) ≈ 0.5, H(2) mole fraction = 0.3, pressure, p = 150 Torr, and input power, P = 1 kW) have been explored in detail by a combination of spatially resolved absorption measurements (of CH, C(2)(a), and OH radicals and H(n = 2) atoms) within the hot plasma region and companion 2-dimensional modeling of the plasma. CO and H(2) are identified as the dominant species in the plasma core. The lower thermal conductivity of such a mixture (cf. the H(2)-rich plasmas used in most diamond chemical vapor deposition) accounts for the finding that CH(4)/CO(2)/H(2) plasmas can yield similar maximal gas temperatures and diamond growth rates at lower input powers than traditional CH(4)/H(2) plasmas. The plasma chemistry and composition is seen to switch upon changing from oxygen-rich (X(C/Σ) < 0.5) to carbon-rich (X(C/Σ) > 0.5) source gas mixtures and, by comparing CH(4)/CO(2)/H(2) (X(C/Σ) = 0.5) and CO/H(2) plasmas, to be sensitive to the choice of source gas (by virtue of the different prevailing gas activation mechanisms), in contrast to C/H process gas mixtures. CH(3) radicals are identified as the most abundant C(1)H(x) [x = 0-3] species near the growing diamond surface within the process window for successful diamond growth (X(C/Σ) ≈ 0.5-0.54) identified by Bachmann et al. (Diamond Relat. Mater.1991, 1, 1). This, and the findings of similar maximal gas temperatures (T(gas) ~2800-3000 K) and H atom mole fractions (X(H)~5-10%) to those found in MW-activated C/H plasmas, points to the prevalence of similar CH(3) radical based diamond growth mechanisms in both C/H and C/H/O plasmas.

  6. Enhanced photocatalytic properties of nanoclustered P-doped TiO2 films deposited by advanced atmospheric plasma jet.

    PubMed

    Seo, Hyung-Kee; Elliott, C Michael; Ansari, S G

    2012-09-01

    A facile preparation of P-doped TiO2 nanoclusters onto fluorine-doped tin oxide (FTO) glass by an advanced atmospheric plasma jet (AAP jet) is reported here. Titanium tetrachloride (TiCl4) and phosphorus trichloride (PCl3) were used as precursors. Radio frequencies were used to generate plasma at fix powder with Argon as carrier gas. Films were deposited at 500 degrees C for 10 minutes. For comparison, as-prepared, annealed and deposited at 500 degrees C samples were studied for chemical/physical properties by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Optical properties were studied by using UV-Vis spectroscopy which indicated a reduction in optical band with P-doping. The rhodamine B (Rh-B) degradation by P-doped TiO2 deposited at 500 degrees C showed enhanced degradation efficiency than that of annealed TiO2. The suggested deposition method appears to be suitable for the synthesis of photocatalyst with proper control over dopants.

  7. Thermal and plasma enhanced atomic layer deposition of TiO{sub 2}: Comparison of spectroscopic and electric properties

    SciTech Connect

    Das, Chittaranjan Henkel, Karsten; Tallarida, Massimo; Schmeißer, Dieter; Gargouri, Hassan; Kärkkänen, Irina; Schneidewind, Jessica; Gruska, Bernd; Arens, Michael

    2015-01-15

    Titanium oxide (TiO{sub 2}) deposited by atomic layer deposition (ALD) is used as a protective layer in photocatalytic water splitting system as well as a dielectric in resistive memory switching. The way ALD is performed (thermally or plasma-assisted) may change the growth rate as well as the electronic properties of the deposited films. In the present work, the authors verify the influence of the ALD mode on functional parameters, by comparing the growth rate and electronic properties of TiO{sub 2} films deposited by thermal (T-) and plasma-enhanced (PE-) ALD. The authors complete the study with the electrical characterization of selected samples by means of capacitance–voltage and current–voltage measurements. In all samples, the authors found a significant presence of Ti{sup 3+} states, with the lowest content in the PE-ALD grown TiO{sub 2} films. The observation of Ti{sup 3+} states was accompanied by the presence of in-gap states above the valence band maximum. For films thinner than 10 nm, the authors found also a strong leakage current. Also in this case, the PE-ALD films showed the weakest leakage currents, showing a correlation between the presence of Ti{sup 3+} states and leakage current density.

  8. Control of TTIP Solution for Atmospheric Pressure Plasma Jet and Deposition of TiO2 Micro-particles

    NASA Astrophysics Data System (ADS)

    Hayakawa, Masahiro; Parajulee, Shankar; Ikezawa, Shunjiro

    TiO2 deposition-methods are versatile and are expected to be more simple and easy, however, in recent years the industrial photocatalytic products have been developed enormously. In this work, photocatalytic TiO2 micro-particles are deposited using the atmospheric pressure plasma jet device. Here, deposition-method is carried out in two steps, at first, the hydrolysis reaction time has been able to control which will resolve the TTIP coagulating trouble during the transportation, by acidifying the solution with AA (Acetic acid) and DEA (Diethanolamine). An experiment was performed to measure the hydrolysis reaction time of TTIP (Titanium tetraisopropoxide) solution by He-Ne laser. Secondly, the deposition of TiO2 micro-particles was carried out using the atmospheric pressure plasma jet with the controlled TTIP solution in reaction time. Based on SEM and water contact angle measurement, it is found that the smaller the mixing ratios of TTIP and DEA the smaller the TiO2 particle size. Also, the smaller the TiO2 particles the smaller the contact angle under the UV irradiation which suffices the photocatalytic behavior.

  9. Trends in surface engineering of biomaterials: atmospheric pressure plasma deposition of coatings for biomedical applications

    NASA Astrophysics Data System (ADS)

    da Ponte, G.; Sardella, E.; Fanelli, F.; D'Agostino, R.; Favia, P.

    2011-11-01

    Cold plasma processes for surface engineering of biomaterials and biomedical devices are traditionally performed at low pressure; more and more, though, surface modification plasma processes at atmospheric pressure are also gaining popularity. This short review is aimed to list briefly atmospheric pressure plasma processes reported, in the last decade, for adapting the surface of materials to the best interactions with cells, bacteria and biomolecules.

  10. Plasma-deposited fluorocarbon polymer films on titanium for preventing cell adhesion: a surface finishing for temporarily used orthopaedic implants

    NASA Astrophysics Data System (ADS)

    Finke, B.; Testrich, H.; Rebl, H.; Walschus, U.; Schlosser, M.; Zietz, C.; Staehlke, S.; Nebe, J. B.; Weltmann, K. D.; Meichsner, J.; Polak, M.

    2016-06-01

    The design of a titanium implant surface should ideally support its later application in clinical use. Temporarily used implants have to fulfil requirements different from permanent implants: they should ensure the mechanical stabilization of the bone stock but in trauma surgery they should not be integrated into the bone because they will be removed after fracture healing. Finishing of the implant surface by a plasma-fluorocarbon-polymer (PFP) coating is a possible approach for preventing cell adhesion of osteoblasts. Two different low pressure gas-discharge plasma processes, microwave (MW 2.45 GHz) and capacitively coupled radio frequency (RF 13.56 MHz) plasma, were applied for the deposition of the PFP film using a mixture of the precursor octafluoropropane (C3F8) and hydrogen (H2). The thin films were characterized by x-ray photoelectron spectroscopy, Fourier transform infrared reflection absorption spectroscopy, and water contact angle measurements. Cell culture experiments show that cell adhesion and spreading of MG-63 osteoblasts were clearly reduced or nonexistent on these surfaces, also after 24 h of storage in the cell culture medium. In vivo data demonstrated that the local inflammatory tissue response for the PFP films deposited in MW and RF plasma were comparable to uncoated controls.

  11. Raman spectra investigation of the defects of chemical vapor deposited multilayer graphene and modified by oxygen plasma treatment

    NASA Astrophysics Data System (ADS)

    Li, Zongyao; Xu, Yu; Cao, Bing; Qi, Lin; He, Shunyu; Wang, Chinhua; Zhang, Jicai; Wang, Jianfeng; Xu, Ke

    2016-11-01

    Graphene, a two dimensional material, can be modified its properties by defects engineering. Here, we present Raman spectra studies of the multilayer graphene (MLG) fabricated by low-pressure chemical vapor deposition over copper foil, and report that the defects of MLG can be controlled by adjusting methane concentration. Moreover, MLG can be changed from metallic to semiconductoring properties by using oxygen plasma treatment, and we investigate the defects evolution of the graphene after exposing to oxygen plasma by Raman spectra. Our results indicate that the amount of defects in graphene can be changed by regulating the methane concentration and oxygen plasma exposure times, but the primary type of defect in MLG is still boundary-like defect. It is valuable for understanding the physics of defects evolution through artificially generated defects, and such defect engineering will greatly open up the future application of the novel material.

  12. Characteristics of ultra low-k nanoporous and fluorinated silica based films prepared by plasma enhanced chemical vapor deposition

    SciTech Connect

    Abbasi-Firouzjah, M.; Shokri, B.

    2013-12-07

    Low dielectric constant (low-k) silica based films were deposited on p-type silicon and polycarbonate substrates by radio frequency (RF) plasma enhanced chemical vapor deposition method at low temperature. A mixture of tetraethoxysilane vapor, oxygen, and tetrafluoromethane (CF{sub 4}) was used for the deposition of the films in forms of two structures called as SiO{sub x}C{sub y} and SiO{sub x}C{sub y}F{sub z}. Properties of the films were controlled by amount of porosity and fluorine content in the film matrix. The influence of RF power and CF{sub 4} flow on the elemental composition, deposition rate, surface roughness, leakage current, refractive index, and dielectric constant of the films were characterized. Moreover, optical emission spectroscopy was applied to monitor the plasma process at the different parameters. Electrical characteristics of SiO{sub x}C{sub y} and SiO{sub x}C{sub y}F{sub z} films with metal-oxide-semiconductor structure were investigated using current-voltage analysis to measure the leakage current and breakdown field, as well as capacitance-voltage analysis to obtain the film's dielectric constant. The results revealed that SiO{sub x}C{sub y} films, which are deposited at lower RF power produce more leakage current, meanwhile the dielectric constant and refractive index of these films decreased mainly due to the more porosity in the film structure. By adding CF{sub 4} in the deposition process, fluorine, the most electronegative and the least polarized atom, doped into the silica film and led to decrease in the refractive index and the dielectric constant. In addition, no breakdown field was observed in the electrical characteristics of SiO{sub x}C{sub y}F{sub z} films and the leakage current of these films reduced by increment of the CF{sub 4} flow.

  13. Crystalline silicon surface passivation with amorphous SiC{sub x}:H films deposited by plasma-enhanced chemical-vapor deposition

    SciTech Connect

    Martin, I.; Vetter, M.; Garin, M.; Orpella, A.; Voz, C.; Puigdollers, J.; Alcubilla, R.

    2005-12-01

    Surface-passivating properties of hydrogenated amorphous silicon carbide films (a-SiC{sub x}:H) deposited by plasma-enhanced chemical-vapor deposition on both p- and n-type crystalline silicon (c-Si) have been extensively studied by our research group in previous publications. We characterized surface recombination by measuring the dependence of the effective lifetime ({tau}{sub eff}) on excess carrier density ({delta}n) through quasi-steady-state photoconductance technique. Additionally, we fitted the measured {tau}{sub eff}({delta}n) curves applying an insulator/semiconductor model which allows us to determine the surface recombination parameters. In this paper, this model is analyzed in detail focusing on the accuracy in the determination of the fitting parameters and revealing uncertainties not detected up to now. Taking advantage of this analysis, the dependence of surface passivation on film deposition conditions is revised including intrinsic a-SiC{sub x}:H films on both p- and n-type c-Si and phosphorus-doped a-SiC{sub x}:H films on p-type c-Si. As a consequence, a broad view of this passivation scheme is obtained.

  14. Barrier properties to surrogates of hydrogenated carbon nano-films deposited on PET by plasma-enhanced chemical vapour deposition.

    PubMed

    Oliveira, Éder C; Echegoyen, Yolanda; Nerin, Cristina; Cruz, Sandra A

    2014-01-01

    Poly(ethylene terephthalate) resin was contaminated with a series of surrogates using a US Food and Drug Administration protocol. The contaminated samples were coated with two different kinds of hydrogenated amorphous carbon thin films (a-C:H): one with diamond-like hydrogenated amorphous carbon and another with polymer-like hydrogenated carbon (PLCH) phases. To evaluate the barrier properties of the a-C:H films, migration assays were performed using food simulants. After the tests, analysis by gas chromatography with different detectors was carried out. The appearance of the films before and after the migration experiments was studied by field emission scanning electron microscopy. The results showed that a-C:H films have good barrier properties for most of the evaluated compounds, mainly when they are deposited as PLCH phase.

  15. In-situ erosion and deposition measurements of plasma-facing surfaces in Alcator C-Mod

    NASA Astrophysics Data System (ADS)

    Barnard, Harold S.

    2014-10-01

    The Accelerator Based In-situ Materials Surveillance (AIMS) diagnostic was recently developed to demonstrate the novel application of ion beam analysis (IBA) to in-vessel studies of plasma materials interactions in Alcator C-Mod. The AIMS diagnostic injects a 900 keV deuterium ion beam into the tokamak's vacuum vessel between plasma discharges while magnetic fields are used to steer the ion beam to plasma facing component (PFC) surfaces. Spectroscopic analysis of neutrons and gamma rays from the induced nuclear reactions provides a quantitative, spatially resolved map of the PFC surface composition that includes boron (B) and deuterium (D) content. Since AIMS is sensitive to low-Z elements and C-Mod regularly boronizes PFCs, the evolution of B and D on PFCs can be used to directly study erosion, deposition, and fuel retention in response to plasma operations and wall conditioning processes. AIMS analysis of 18 lower single null I-mode discharges show a net boron deposition rate of 6 +/- 2 nm/s on the inner wall while subsequent inner wall limited discharges and a disruption did not show significant changes in B. Measurements of D content showed relative changes of >2.5 following a similar trend. This suggests high D retention rates and net B deposition rates of ~18 cm/year of plasma exposure are possible and depend strongly on the plasma conditions. Ex-situ IBA was also performed on the same PFCs after removal from C-Mod, successfully validating the AIMS technique. These IBA measurements also show that the B content on the inner wall varied toroidally and poloidally from 0 to 3000 nm, demonstrating the importance of the spatial resolution provided by AIMS and the sensitivity of PFCs to B-field alignment. AIMS upgrades are underway for operation in 2014 and we anticipate new measurements correlating the evolution of PFC surfaces to plasma configuration, RF heating, and current drive scenarios. This work is supported by U.S. DOE Grant No. DE-FG02-94ER54235 and

  16. Room temperature plasma enhanced atomic layer deposition for TiO{sub 2} and WO{sub 3} films

    SciTech Connect

    Strobel, Alexander; Schnabel, Hans-Dieter Reinhold, Ullrich; Rauer, Sebastian; Neidhardt, Andreas

    2016-01-15

    This paper presents a study on plasma enhanced atomic layer deposition (ALD) of TiO{sub 2} and WO{sub 3} films on silicon substrates. At low temperatures, ALD processes, which are not feasible at high temperatures, could be possible. For example, temperatures at 180 °C and above allow no WO{sub 3} ALD process with WF{sub 6} as a precursor because etching processes hinder film growth. Further low temperature deposition techniques are needed to coat temperature sensitive materials. For the deposition, WF{sub 6} and TiCl{sub 4} are used as metal precursors and O{sub 2} and H{sub 2}O as oxygen sources. The depositions were accomplished in the temperature range of 30 °C up to 180 °C for both metal oxides. Spectroscopic ellipsometry, x-ray reflection, and grazing incidence diffraction were used to investigate the deposited ALD thin films. Film growth, density, crystallinity, and roughness are discussed as functions of temperature after ensuring the ALD requirement of self-saturating adsorption. Growth rates and measured material properties are in good agreement with literature data.

  17. Highly efficient photocatalytic TiO2 coatings deposited by open air atmospheric pressure plasma jet with aerosolized TTIP precursor

    NASA Astrophysics Data System (ADS)

    Fakhouri, H.; Ben Salem, D.; Carton, O.; Pulpytel, J.; Arefi-Khonsari, F.

    2014-07-01

    A simple method to deposit photocatalytic TiO2 coatings, at a high rate (20-40 µm s-1), and with a high porosity, is reported in this paper. This method, which allows the treatment of membranes (with an 800 nm pore size), is based on the introduction of a liquid precursor sprayed into an open-air atmospheric pressure plasma jet (APPJ). The photocatalytic activity of the TiO2 thin films prepared by APPJ have been compared with our best N-doped TiO2 thin films, deposited by reactive radio frequency (RF) magnetron sputtering, previously reported in the literature. The morphology, chemical composition, photoelectrochemical, and photocatalytic properties of the coatings have been studied in this paper. Significant control of the porosity and crystallinity was achieved by varying the deposition parameters and the annealing temperature. Under optimized conditions, the TiO2 coatings deposited by APPJ are characterized by a higher photocatalytic activity as compared to the optimized thin films deposited by RF sputtering. This difference can be explained by the higher specific surface of the APPJ coatings. Finally, the most interesting characteristic of this APPJ-liquid spray process is its capacity to treat membranes without blocking the pores, and to produce photocatalytic membranes which can efficiently combine filtration and photocatalysis for water treatment.

  18. A new perspective on structural and morphological properties of carbon nanotubes synthesized by Plasma Enhanced Chemical Vapor Deposition technique

    NASA Astrophysics Data System (ADS)

    Salar Elahi, A.; Agah, K. Mikaili; Ghoranneviss, M.

    CNTs were produced on a silicon wafer by Plasma Enhanced Chemical Vapor Deposition (PECVD) using acetylene as a carbon source, cobalt as a catalyst and ammonia as a reactive gas. The DC-sputtering system was used to prepare cobalt thin films on Si substrates. A series of experiments was carried out to investigate the effects of reaction temperature and deposition time on the synthesis of the nanotubes. The deposition time was selected as 15 and 25 min for all growth temperatures. Energy Dispersive X-ray (EDX) measurements were used to investigate the elemental composition of the Co nanocatalyst deposited on Si substrates. Atomic Force Microscopy (AFM) was used to characterize the surface topography of the Co nanocatalyst deposited on Si substrates. The as-grown CNTs were characterized under Field Emission Scanning Electron Microscopy (FESEM) to study the morphological properties of CNTs. Also, the grown CNTs have been investigated by High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. The results demonstrated that increasing the temperature leads to increasing the diameter of CNTs.

  19. Hard coating of ultrananocrystalline diamond/nonhydrogenated amorphous carbon composite films on cemented tungsten carbide by coaxial arc plasma deposition

    NASA Astrophysics Data System (ADS)

    Naragino, Hiroshi; Egiza, Mohamed; Tominaga, Aki; Murasawa, Koki; Gonda, Hidenobu; Sakurai, Masatoshi; Yoshitake, Tsuyoshi

    2016-08-01

    Ultrananocrystalline diamond (UNCD)/nonhydrogenated amorphous carbon (a-C) composite (UNCD/a-C) films were deposited on cemented carbide containing Co by coaxial arc plasma deposition. With decreasing substrate temperature, the hardness was enhanced accompanied by an enhancement in the sp3/(sp2 + sp3). Energy-dispersive X-ray and secondary ion mass spectrometry spectroscopic measurements exhibited that the diffusion of Co atoms from the substrates into the films hardly occurs. The film deposited at room temperature exhibited the maximum hardness of 51.3 GPa and Young's modulus of 520.2 GPa, which evidently indicates that graphitization induced by Co in the WC substrates, and thermal deformation from sp3 to sp2 bonding are suppressed. The hard UNCD/a-C films can be deposited at a thickness of approximately 3 μm, which is an order larger than that of comparably hard a-C films. The internal compressive stress of the 51.3-GPa film is 4.5 GPa, which is evidently smaller than that of comparably hard a-C films. This is a reason for the thick deposition. The presence of a large number of grain boundaries in the film, which is a structural specific to UNCD/a-C films, might play a role in releasing the internal stress of the films.

  20. Oxygen plasma treatment and deposition of CN{sub x} on a fluorinated polymer matrix composite for improved erosion resistance

    SciTech Connect

    Muratore, C.; Korenyi-Both, A.; Bultman, J. E.; Waite, A. R.; Jones, J. G.; Storage, T. M.; Voevodin, A. A.

    2007-07-15

    The use of polymer matrix composites in aerospace propulsion applications is currently limited by insufficient resistance to erosion by abrasive media. Erosion resistant coatings may provide necessary protection; however, adhesion to many high temperature polymer matrix composite (PMC) materials is poor. A low pressure oxygen plasma treatment process was developed to improve adhesion of CN{sub x} coatings to a carbon reinforced, fluorinated polymer matrix composite. Fullerene-like CN{sub x} was selected as an erosion resistant coating for its high hardness-to-elastic modulus ratio and elastic resilience which were expected to reduce erosion from media incident at different angles (normal or glancing) relative to the surface. In situ x-ray photoelectron spectroscopy was used to evaluate the effect of the plasma treatment on surface chemistry, and electron microscopy was used to identify changes in the surface morphology of the PMC substrate after plasma exposure. The fluorine concentration at the surface was significantly reduced and the carbon fibers were exposed after plasma treatment. CN{sub x} coatings were then deposited on oxygen treated PMC substrates. Qualitative tests demonstrated that plasma treatment improved coating adhesion resulting in an erosion resistance improvement of a factor of 2 compared to untreated coated composite substrates. The combination of PMC pretreatment and coating with CN{sub x} reduced the erosion rate by an order of magnitude for normally incident particles.

  1. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOEpatents

    Schmitt, J.J. III; Halpern, B.L.

    1993-10-26

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

  2. Catalyst-free growth and tailoring morphology of zinc oxide nanostructures by plasma-enhanced deposition at low temperature

    NASA Astrophysics Data System (ADS)

    Chen, W. Z.; Wang, B. B.; Qu, Y. Z.; Huang, X.; Ostrikov, K.; Levchenko, I.; Xu, S.; Cheng, Q. J.

    2017-03-01

    ZnO nanostructures were grown under different deposition conditions from Zn films pre-deposited onto Si substrates in O2-Ar plasma, ignited in an advanced custom-designed plasma-enhanced horizontal tube furnace deposition system. The morphology and structure of the synthesized ZnO nanostructures were systematically and extensively investigated by scanning and transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. It is shown that the morphology of ZnO nanostructures changes from the hybrid ZnO/nanoparticle and nanorod system to the mixture of ZnO nanosheets and nanorods when the growth temperature increases, and the density of ZnO nanorods increases with the increase of oxygen flow rate. The formation of ZnO nanostructures was explained in terms of motion of Zn atoms on the Zn nanoparticle surfaces, and to the local melting of Zn nanoparticles or nanosheets. Moreover, the photoluminescence properties of ZnO nanostructures were studied, and it was revealed that the photoluminescence spectrum features two strong ultraviolet bands at about 378 and 399 nm and a series of weak blue bands within a range of 440-484 nm, related to the emissions of free excitons, near-band edge, and defects of ZnO nanostructures. The obtained results enrich our knowledge on the synthesis of ZnO-based nanostructures and contribute to the development of ZnO-based optoelectronic devices.

  3. Plasmonic gold helices for the visible range fabricated by oxygen plasma purification of electron beam induced deposits

    NASA Astrophysics Data System (ADS)

    Haverkamp, Caspar; Höflich, Katja; Jäckle, Sara; Manzoni, Anna; Christiansen, Silke

    2017-02-01

    Electron beam induced deposition (EBID) currently provides the only direct writing technique for truly three-dimensional nanostructures with geometrical features below 50 nm. Unfortunately, the depositions from metal-organic precursors suffer from a substantial carbon content. This hinders many applications, especially in plasmonics where the metallic nature of the geometric surfaces is mandatory. To overcome this problem a post-deposition treatment with oxygen plasma at room temperature was investigated for the purification of gold containing EBID structures. Upon plasma treatment, the structures experience a shrinkage in diameter of about 18 nm but entirely keep their initial shape. The proposed purification step results in a core-shell structure with the core consisting of mainly unaffected EBID material and a gold shell of about 20 nm in thickness. These purified structures are plasmonically active in the visible wavelength range as shown by dark field optical microscopy on helical nanostructures. Most notably, electromagnetic modeling of the corresponding scattering spectra verified that the thickness and quality of the resulting gold shell ensures an optical response equal to that of pure gold nanostructures.

  4. Plasmonic gold helices for the visible range fabricated by oxygen plasma purification of electron beam induced deposits.

    PubMed

    Haverkamp, Caspar; Höflich, Katja; Jäckle, Sara; Manzoni, Anna; Christiansen, Silke

    2017-02-03

    Electron beam induced deposition (EBID) currently provides the only direct writing technique for truly three-dimensional nanostructures with geometrical features below 50 nm. Unfortunately, the depositions from metal-organic precursors suffer from a substantial carbon content. This hinders many applications, especially in plasmonics where the metallic nature of the geometric surfaces is mandatory. To overcome this problem a post-deposition treatment with oxygen plasma at room temperature was investigated for the purification of gold containing EBID structures. Upon plasma treatment, the structures experience a shrinkage in diameter of about 18 nm but entirely keep their initial shape. The proposed purification step results in a core-shell structure with the core consisting of mainly unaffected EBID material and a gold shell of about 20 nm in thickness. These purified structures are plasmonically active in the visible wavelength range as shown by dark field optical microscopy on helical nanostructures. Most notably, electromagnetic modeling of the corresponding scattering spectra verified that the thickness and quality of the resulting gold shell ensures an optical response equal to that of pure gold nanostructures.

  5. Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement.

    PubMed

    Bugot, Cathy; Schneider, Nathanaëlle; Lincot, Daniel; Donsanti, Frédérique

    2013-01-01

    This paper describes the atomic layer deposition of In2(S,O)3 films by using In(acac)3 (acac = acetylacetonate), H2S and either H2O or O2 plasma as oxygen sources. First, the growth of pure In2S3 films was studied in order to better understand the influence of the oxygen pulses. X-Ray diffraction measurements, optical analysis and energy dispersive X-ray spectroscopy were performed to characterize the samples. When H2O was used as the oxygen source, the films have structural and optical properties, and the atomic composition of pure In2S3. No pure In2O3 films could be grown by using H2O or O2 plasma. However, In2(S,O)3 films could be successfully grown by using O2 plasma as oxygen source at a deposition temperature of T = 160 °C, because of an exchange reaction between S and O atoms. By adjusting the number of In2O3 growth cycles in relation to the number of In2S3 growth cycles, the optical band gap of the resulting thin films could be tuned.

  6. Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

    PubMed Central

    Schneider, Nathanaëlle; Lincot, Daniel

    2013-01-01

    Summary This paper describes the atomic layer deposition of In2(S,O)3 films by using In(acac)3 (acac = acetylacetonate), H2S and either H2O or O2 plasma as oxygen sources. First, the growth of pure In2S3 films was studied in order to better understand the influence of the oxygen pulses. X-Ray diffraction measurements, optical analysis and energy dispersive X-ray spectroscopy were performed to characterize the samples. When H2O was used as the oxygen source, the films have structural and optical properties, and the atomic composition of pure In2S3. No pure In2O3 films could be grown by using H2O or O2 plasma. However, In2(S,O)3 films could be successfully grown by using O2 plasma as oxygen source at a deposition temperature of T = 160 °C, because of an exchange reaction between S and O atoms. By adjusting the number of In2O3 growth cycles in relation to the number of In2S3 growth cycles, the optical band gap of the resulting thin films could be tuned. PMID:24367743

  7. Highly uniform wafer-scale synthesis of α-MoO3 by plasma enhanced chemical vapor deposition.

    PubMed

    Kim, Hyeong-U; Son, Juhyun; Kulkarni, Atul; Ahn, Chisung; Kim, Ki Seok; Shin, Dongjoo; Yeom, Geun Yong; Kim, Taesung

    2017-04-28

    Molybdenum oxide (MoO3) has gained immense attention because of its high electron mobility, wide band gap, and excellent optical and catalytic properties. However, the synthesis of uniform and large-area MoO3 is challenging. Here, we report the synthesis of wafer-scale α-MoO3 by plasma oxidation of Mo deposited on Si/SiO2. Mo was oxidized by O2 plasma in a plasma enhanced chemical vapor deposition (PECVD) system at 150 °C. It was found that the synthesized α-MoO3 had a highly uniform crystalline structure. For the as-synthesized α-MoO3 sensor, we observed a current change when the relative humidity was increased from 11% to 95%. The sensor was exposed to different humidity levels with fast recovery time of about 8 s. Hence this feasibility study shows that MoO3 synthesized at low temperature can be utilized for gas sensing applications by adopting flexible device technology.

  8. The Influence of Plasma Nitriding Pre-Treatment on Tribological Properties of TiN Coatings Deposited by PACVD

    NASA Astrophysics Data System (ADS)

    Mahdipoor, M. S.; Mahboubi, F.; Ahangarani, Sh.; Raoufi, M.; Elmkhah, H.

    2012-06-01

    The aim of this study is to investigate the effect of plasma nitriding pre-treatment (PN) on mechanical and tribological behavior of TiN coatings produced by plasma-assisted chemical vapor deposition (PACVD). The heat treatment of quench and temper was carried out on hot work AISI H11 (DIN 1.2343) steel samples. A group of samples were plasma nitrided at 500 °C for 4 h in an atmosphere containing 25 vol.% nitrogen and 75 vol.% hydrogen. Then TiN layer was deposited on all of samples at 520 °C temperature, 8 kHz frequency, and 33% duty cycle. The microstructural, mechanical, and tribological properties of the coatings were investigated using SEM, WDS, AFM, microhardness tester, and pin-on-disc wear test. The load of wear test was 10 N and the samples were worn against different pins, ball-bearing steel (DIN 1.3505), and cemented tungsten carbide (WC-Co). The results indicate that the difference of hardness between the samples with PN-TiNlayer and those samples with only TiN layer without PN was 450 HV and the former samples showed a significant amount of wear resistance in comparison to the latter ones.

  9. Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhan, Hualin; Garrett, David J.; Apollo, Nicholas V.; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

    2016-01-01

    High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm3, were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail.

  10. Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition

    PubMed Central

    Zhan, Hualin; Garrett, David J.; Apollo, Nicholas V.; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

    2016-01-01

    High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm3, were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail. PMID:26805546

  11. Optical properties of plasma ion-assisted deposition silicon coatings: application to the manufacture of blocking filters for the near-infrared region.

    PubMed

    Bruynooghe, Stephane

    2008-05-01

    I report on the preparation and characterization of optical constants of silicon coatings deposited by an electron beam gun with plasma ion-assisted deposition. With the fabrication of long-wave-pass filters the reliability of the optical constants is assured.

  12. Synthesis of thin films in boron-carbon-nitrogen ternary system by microwave plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kukreja, Ratandeep Singh

    The Boron Carbon Nitorgen (B-C-N) ternary system includes materials with exceptional properties such as wide band gap, excellent thermal conductivity, high bulk modulus, extreme hardness and transparency in the optical and UV range that find application in most fields ranging from micro-electronics, bio-sensors, and cutting tools to materials for space age technology. Interesting materials that belong to the B-C-N ternary system include Carbon nano-tubes, Boron Carbide, Boron Carbon Nitride (B-CN), hexagonal Boron Nitride ( h-BN), cubic Boron Nitride (c-BN), Diamond and beta Carbon Nitride (beta-C3N4). Synthesis of these materials requires precisely controlled and energetically favorable conditions. Chemical vapor deposition is widely used technique for deposition of thin films of ceramics, metals and metal-organic compounds. Microwave plasma enhanced chemical vapor deposition (MPECVD) is especially interesting because of its ability to deposit materials that are meta-stable under the deposition conditions, for e.g. diamond. In the present study, attempt has been made to synthesize beta-carbon nitride (beta-C3N4) and cubic-Boron Nitride (c-BN) thin films by MPECVD. Also included is the investigation of dependence of residual stress and thermal conductivity of the diamond thin films, deposited by MPECVD, on substrate pre-treatment and deposition temperature. Si incorporated CNx thin films are synthesized and characterized while attempting to deposit beta-C3N4 thin films on Si substrates using Methane (CH4), Nitrogen (N2), and Hydrogen (H2). It is shown that the composition and morphology of Si incorporated CNx thin film can be tailored by controlling the sequence of introduction of the precursor gases in the plasma chamber. Greater than 100mum size hexagonal crystals of N-Si-C are deposited when Nitrogen precursor is introduced first while agglomerates of nano-meter range graphitic needles of C-Si-N are deposited when Carbon precursor is introduced first in the

  13. Al2O3 thin films by plasma-enhanced chemical vapour deposition using trimethyl-amine alane (TMAA) as the Al precursor

    NASA Astrophysics Data System (ADS)

    Chryssou, C. E.; Pitt, C. W.

    We report the low temperature (200-300 °C) deposition of uniform, amorphous Al2O3 thin films by plasma-enhanced chemical vapour deposition (PECVD) using trimethyl-amine alane (TMAA) as the Al precursor. The thin films were deposited on both Si and quartz silica (SiO2) substrates. Deposition rates were typically 60 Åmin-1 keeping the TMAA temperature constant at 45 °C. The deposited Al2O3 thin films were stoichiometric alumina with low carbon contamination (0.7-1.3 At%). The refractive index ranged from 1.54 to 1.62 depending on the deposition conditions. The deposition rate was studied as a function of both the RF power and the substrate temperature. The structure and the surface of the deposited Al2O3 thin films were studied using X-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy (SEM).

  14. Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma

    SciTech Connect

    Ohmi, Hiromasa Yasutake, Kiyoshi; Kakiuchi, Hiroaki

    2015-07-28

    The selective deposition of Si films was demonstrated using a chemical sputtering process induced by a high pressure hydrogen plasma at 52.6 kPa (400 Torr). In this chemical sputtering process, the initial deposition rate (R{sub d}) is dependent upon the substrate type. At the initial stage of Si film formation, R{sub d} on glass substrates increased with elapsed time and reached to a constant value. In contrast, R{sub d} on Si substrates remained constant during the deposition. The selective deposition of Si films can be achieved by adjusting the substrate temperature (T{sub sub}) and hydrogen concentration (C{sub H2}) in the process atmosphere. For any given deposition time, it was found that an optimum C{sub H2} exists for a given T{sub sub} to realize the selective deposition of a Si film, and the optimum T{sub sub} value tends to increase with decreasing C{sub H2}. According to electron diffraction patterns obtained from the samples, the selectively prepared Si films showed epitaxial-like growth, although the Si films contained many defects. It was revealed by Raman scattering spectroscopy that some of the defects in the Si films were platelet defects induced by excess hydrogen incorporated during Si film formation. Raman spectrum also suggested that Si related radicals (SiH{sub 2}, SiH, Si) with high reactivity contribute to the Si film formation. Simple model was derived as the guideline for achieving the selective growth.

  15. Haemocompatibility of hydrogenated amorphous carbon (a-C:H) films synthesized by plasma immersion ion implantation-deposition

    NASA Astrophysics Data System (ADS)

    Yang, P.; Kwok, S. C. H.; Chu, P. K.; Leng, Y. X.; Chen, J. Y.; Wang, J.; Huang, N.

    2003-05-01

    Diamond-like-carbon has attracted much attention recently as a potential biomaterial in blood contacting biomedical devices. However, previous reports in this area have not adequately addressed the biocompatibility and acceptability of the materials in blood contacting applications. In this study, hydrogenated amorphous carbon (a-C:H) films were fabricated on silicon wafers (1 0 0) using plasma immersion ion implantation-deposition. A series of a-C:H films with different structures and chemical bonds were fabricated under different substrate voltages. The results indicate that film graphitization is promoted at higher substrate bias. The film deposited at a lower substrate bias of -75 V possesses better blood compatibility than the films at higher bias and stainless steel. Our results suggest two possible paths to improve the blood compatibility, suppression of the endogenic clotting system and reduction of platelet activation.

  16. Highly efficient shrinkage of inverted-pyramid silicon nanopores by plasma-enhanced chemical vapor deposition technology.

    PubMed

    Wang, Yifan; Deng, Tao; Chen, Qi; Liang, Feng; Liu, Zewen

    2016-06-24

    Solid-state nanopore-based analysis systems are currently one of the most attractive and promising platforms in sensing fields. This work presents a highly efficient method to shrink inverted-pyramid silicon nanopores using plasma-enhanced chemical vapor deposition (PECVD) technology by the deposition of SiN x onto the surface of the nanopore. The contraction of the inverted-pyramid silicon nanopores when subjected to the PECVD process has been modeled and carefully analyzed, and the modeling data are in good agreement with the experimental results within a specific PECVD shrinkage period (∼0-600 s). Silicon nanopores within a 50-400 nm size range contract to sub-10 nm dimensions. Additionally, the inner structure of the nanopores after the PECVD process has been analyzed by focused ion beam cutting process. The results show an inner structure morphology change from inverted-pyramid to hourglass, which may enhance the spatial resolution of sensing devices.

  17. Selective growth of boron nitride nanotubes by plasma-enhanced chemical vapor deposition at low substrate temperature

    NASA Astrophysics Data System (ADS)

    Guo, L.; Singh, R. N.

    2008-02-01

    Hexagonal boron nitride nanotubes (BNNTs) were synthesized at a low substrate temperature of 800 °C on nickel (Ni) coated oxidized Si(111) wafers in a microwave plasma-enhanced chemical vapor deposition system (MPCVD) by decomposition and reaction of gas mixtures consisting of B2H6-NH3-H2. The 1D BN nanostructures grew preferentially on Ni catalyst islands with a small thickness only. In situ mass spectroscopic analysis and optical emission spectroscopy were used to identify the gas reactions responsible for the BNNT formation. The morphology and structural properties of the deposits were analyzed by SEM, TEM, EDX, SAD and Raman spectroscopy. The growth mechanism of the BNNTs was identified.

  18. Process diagnostics and monitoring using the multipole resonance probe in an inhomogeneous plasma for ion-assisted deposition of optical coatings

    NASA Astrophysics Data System (ADS)

    Styrnoll, T.; Harhausen, J.; Lapke, M.; Storch, R.; Brinkmann, R. P.; Foest, R.; Ohl, A.; Awakowicz, P.

    2013-08-01

    The application of a multipole resonance probe (MRP) for diagnostic and monitoring purposes in a plasma ion-assisted deposition (PIAD) process is reported. Recently, the MRP was proposed as an economical and industry compatible plasma diagnostic device (Lapke et al 2011 Plasma Sources Sci. Technol. 20 042001). The major advantages of the MRP are its robustness against dielectric coating and its high sensitivity to measure the electron density. The PIAD process investigated is driven by the advanced plasma source (APS), which generates an ion beam in the deposition chamber for the production of high performance optical coatings. With a background neutral pressure of p0 ˜ 20 mPa the plasma expands from the source region into the recipient, leading to an inhomogeneous spatial distribution. Electron density and electron temperature vary over the distance from substrate (ne ˜ 109 cm-3 and Te,eff ˜ 2 eV) to the APS (ne ≳ 1012 cm-3 and Te,eff ˜ 20 eV) (Harhausen et al 2012 Plasma Sources Sci. Technol. 21 035012). This huge variation of the plasma parameters represents a big challenge for plasma diagnostics to operate precisely for all plasma conditions. The results obtained by the MRP are compared to those from a Langmuir probe chosen as reference diagnostics. It is demonstrated that the MRP is suited for the characterization of the PIAD plasma as well as for electron density monitoring. The latter aspect offers the possibility to develop new control schemes for complex industrial plasma environments.

  19. Sticking non-stick: Surface and Structure control of Diamond-like Carbon in Plasma Enhanced Chemical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Jones, B. J.; Nelson, N.

    2016-10-01

    This short review article explores the practical use of diamond-like carbon (DLC) produced by plasma enhanced chemical vapour deposition (PECVD). Using as an example issues relating to the DLC coating of a hand-held surgical device, we draw on previous works using atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, tensiometry and electron paramagnetic resonance. Utilising data from these techniques, we examine the surface structure, substrate-film interface and thin film microstructure, such as sp2/sp3 ratio (graphitic/diamond-like bonding ratio) and sp2 clustering. We explore the variations in parameters describing these characteristics, and relate these to the final device properties such as friction, wear resistance, and diffusion barrier integrity. The material and device characteristics are linked to the initial plasma and substrate conditions.

  20. Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

    NASA Astrophysics Data System (ADS)

    Tarala, V.; Ambartsumov, M.; Altakhov, A.; Martens, V.; Shevchenko, M.

    2016-12-01

    The possibility of using plasma enhanced atomic layer deposition method for growing heteroepitaxial oriented AlN films on Si (100) and sapphire (001) substrates at temperatures less than 300 °C was investigated. The resulting samples were studied by X-ray diffraction analysis and ellipsometry. It has been shown that, ceteris paribus, AlN films grown on sapphire substrates have higher crystallinity than the samples grown on silicon wafers. With duration of plasma exposure of more than 20 s and at a temperature of 300 °C synthesized heteroepitaxial film had refractive index equal to 2.03±0.03. The X-ray diffraction scans feature (002) and (004) reflections at 2Θ equal to 35.7° and 75.9°, which are characteristic of hexagonal polytype of AlN. For the best sample, (002) reflection had full width on the half maximum of 162±11″

  1. Atomic layer deposition of ruthenium on plasma-treated vertically aligned carbon nanotubes for high-performance ultracapacitors.

    PubMed

    Kim, Jun Woo; Kim, Byungwoo; Park, Suk Won; Kim, Woong; Shim, Joon Hyung

    2014-10-31

    It is challenging to realize a conformal metal coating by atomic layer deposition (ALD) because of the high surface energy of metals. In this study, ALD of ruthenium (Ru) on vertically aligned carbon nanotubes (CNTs) was carried out. To activate the surface of CNTs that lack surface functional groups essential for ALD, oxygen plasma was applied ex situ before ALD. X-ray photoelectron spectroscopy and Raman spectroscopy confirmed surface activation of CNTs by the plasma pretreatment. Transmission electron microscopy analysis with energy-dispersive x-ray spectroscopy composition mapping showed that ALD Ru grew conformally along CNTs walls. ALD Ru/CNTs were electrochemically oxidized to ruthenium oxide (RuOx) that can be a potentially useful candidate for use in the electrodes of ultracapacitors. Electrode performance of RuOx/CNTs was evaluated using cyclic voltammetry and galvanostatic charge-discharge measurements.

  2. Effects of thermal annealing on the structural, mechanical, and tribological properties of hard fluorinated carbon films deposited by plasma enhanced chemical vapor deposition

    SciTech Connect

    Maia da Costa, M.E.H.; Baumvol, I.J.R.; Radke, C.; Jacobsohn, L.G.; Zamora, R.R.M.; Freire, F.L. Jr.

    2004-11-01

    Hard amorphous fluorinated carbon films (a-C:F) deposited by plasma enhanced chemical vapor deposition were annealed in vacuum for 30 min in the temperature range of 200-600 deg. C. The structural and compositional modifications were followed by several analytical techniques: Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Nanoidentation measurements and lateral force microscopy experiments were carried out in order to provide the film hardness and the friction coefficient, respectively. The internal stress and contact angle were also measured. RBS, ERDA, and XPS results indicate that both fluorine and hydrogen losses occur for annealing temperatures higher than 300 deg. C. Raman spectroscopy shows a progressive graphitization upon annealing, while the surface became slightly more hydrophobic as revealed by the increase of the contact angle. Following the surface wettability reduction, a decrease of the friction coefficient was observed. These results highlight the influence of the capillary condensation on the nanoscale friction. The film hardness and the internal stress are constant up to 300 deg. C and decrease for higher annealing temperatures, showing a direct correlation with the atomic density of the films. Since the thickness variation is negligible, the mass loss upon thermal treatment results in amorphous structures with a lower degree of cross-linking, explaining the deterioration of the mechanical properties of the a-C:F films.

  3. In situ spectroscopic ellipsometry growth studies on the Al-doped ZnO films deposited by remote plasma-enhanced metalorganic chemical vapor deposition

    SciTech Connect

    Volintiru, I.; Creatore, M.; Sanden, M. C. M. van de

    2008-02-01

    In situ spectroscopic ellipsometry (SE) was applied to study the pyramidlike and pillarlike growth of Al doped ZnO (AZO) films deposited by means of remote plasma-enhanced metalorganic chemical vapor deposition for transparent conductive oxide applications. Real time SE studies in the visible region allowed discerning between the two growth modes by addressing the time evolution of the bulk and surface roughness layer thickness. While the pillarlike mode is characterized by a constant growth rate, a slower rate in the initial stage (up to 150-200 nm film thickness), compared to the bulk, is observed for the growth of pyramidlike AZO films. The two modes differ also in terms of surface roughness development: a saturation behavior is observed for film thickness above 150-200 nm in the case of the pyramidlike films, while a slow linear increase with film thickness characterizes the pillarlike mode. By extending the SE analysis of the AZO films to the near infrared region, valuable information about the in grain properties could be extracted: excellent in grain mobility values, i.e., larger than 100 and 50 cm{sup 2}/V s, are determined for the pyramidlike and pillarlike AZO layers, respectively. The comparison between the outcome of the in situ real time SE studies and the ex situ electrical and chemical characterization highlights the limitations in the electron transport occurring in both types of films and allows one to address routes toward further improvement in AZO conductivity.

  4. Vacuum arc plasma deposition of thin titanium dioxide films on silicone elastomer as a functional coating for medical applications.

    PubMed

    Boudot, Cécile; Kühn, Marvin; Kühn-Kauffeldt, Marina; Schein, Jochen

    2017-05-01

    Silicone elastomer is a promising material for medical applications and is widely used for implants with blood and tissue contact. However, its strong hydrophobicity limits adhesion of tissue cells to silicone surfaces, which can impair the healing process. To improve the biological properties of silicone, a triggerless pulsed vacuum cathodic arc plasma deposition technique was applied to deposit titanium dioxide (TiO2) films onto the surface. Scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy and contact angle measurements were used for coating characterization. Deposited films were about 150nm thick and exhibited good adhesion to the underlying silicone substrate. Surface wettability and roughness both increased after deposition of the TiO2 layer. In addition, cell-biological investigations demonstrated that the in-vitro cytocompatibility of TiO2-coated samples was greatly improved without impacting silicone's nontoxicity. For validation of use in medical devices, further investigations were conducted and demonstrated stability of surface properties in an aqueous environment for a period of 68days and the coating's resistance to several sterilization methods.

  5. Undoped InOx films deposited by radio frequency plasma enhanced reactive thermal evaporation at room temperature: importance of substrate.

    PubMed

    Parreira, P; Lavareda, G; Valente, J; Nunes, F T; Amaral, A; de Carvalho, C Nunes

    2010-04-01

    Conductive and transparent undoped thin films of indium oxide (InOx ), 120 nm average thick, were deposited by radio frequency plasma enhanced reactive thermal evaporation (rf-PERTE) of indium in the presence of oxygen at room temperature. Several substrates were used in order to study their influence on the main properties of these films: alkali free (AF) glass, fused silica, crystalline silicon and polyethylene terephthalate (PET). Surface morphology of the InOx films as a function of the substrates was observed by SEM and showed that the undoped InOx films obtained are nanostructured. For the c-Si substrate, InOx films with increased grain size are obtained, induced by the crystalline substrate. Films deposited on fused silica and AF glass substrates show a nano-grainy surface with similar surface morphologies. The InOx films deposited on AF glass show the highest values of both: electrical conductivity of about 1100 (omega cm)(-1) and visible transmittance of 85%. The substrate has a greater influence on the surface morphology of the films when a polymer (PET) is used. InOx films deposited on PET show a decrease in the electrical conductivity (90 (omega cm)(-1)) and a slight decrease in the average visible transmittance (78%).

  6. Plasma enhanced chemical vapour deposition of silica onto Ti: Analysis of surface chemistry, morphology and functional hydroxyl groups.

    PubMed

    Szili, Endre J; Kumar, Sunil; Smart, Roger St C; Lowe, Rachel; Saiz, Eduardo; Voelcker, Nicolas H

    2008-07-15

    Previously, we have developed and characterised a procedure for the deposition of thin silica films by a plasma enhanced chemical vapour deposition (PECVD) procedure using tetraethoxysilane (TEOS) as the main precursor. We have used the silica coatings for improving the corrosion resistance of metals and for enhancing the bioactivity of biomedical metallic implants. Recently, we have been fine-tuning the PECVD method for producing high quality and reproducible PECVD-silica (PECVD-Si) coatings on metals, primarily for biomaterial applications. In order to understand the interaction of the PECVD-Si coatings with biological species (such as proteins and cells), it is important to first analyse the properties of the silica films deposited using the optimised parameters. Therefore, this current investigation was carried out to analyse the characteristic features of PECVD-Si deposited on Ti substrates (PECVD-Si-Ti). We determined that the PECVD-Si coatings on Ti were conformal to the substrate surface, strongly adhered to the underlying substrate and were resistant to delamination. The PECVD-Si surface was composed of stoichiometric SiO(2), showed a low carbon content (below 10 at.%) and was very hydrophilic (contact angle <10°). Finally, we also showed that the PECVD-Si coatings contain functional hydroxyl groups.

  7. Determination of photocatalytic activity in amorphous and crystalline titanium oxide films prepared using plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wu, Cheng-Yang; Chiang, Bo-Sheng; Chang, Springfield; Liu, Day-Shan

    2011-01-01

    Hydro-oxygenated amorphous titanium oxide (a-TiO x:OH) films were prepared by plasma-enhanced chemical vapor deposition (PECVD) using precursors of titanium tetraisopropoxide (TTIP) and oxygen. The influences of chemical states and crystal quality on the photocatalytic activity were systematically investigated in the as-deposited and post-annealed films. The degree of the photocatalytic activity was deeply correlated with the porosity related to the hydroxyl (OH) groups in the as-deposited amorphous film. The crystallized anatase structures was observed from the 200 °C-deposited a-TiO x:OH film after a post-annealing treatment at 400 °C. The photocatalytic activity related to the film with anatase structure was markedly superior to that of an amorphous film with porous structures. The larger the crystal size of the anatase structure, the higher the photocatalytic activity obtained. At elevated annealed temperatures, the inferior anatase structure due to the crystalline transformation led to a low photocatalytic activity. It was concluded that the photocatalytic activity of an amorphous TiO x film prepared using PECVD was determined by the porosity originating from the functional OH groups in the film, whereas the crystalline quality of anatase phase in the annealed poly-TiO x film was crucial to the photocatalytic activity.

  8. Large-area SiC membrane produced by plasma enhanced chemical vapor deposition at relatively high temperature

    SciTech Connect

    Liu, Yu; Xie, Changqing

    2015-09-15

    Advances in the growth of silicon carbide (SiC) thin films with outstanding thermal and mechanical properties have received considerable attention. However, the fabrication of large-area free-standing SiC membrane still remains a challenge. Here, the authors report a plasma enhanced chemical vapor deposition process at a relatively high temperature to improve the free-standing SiC membrane area. A systematic study on the microstructural, mechanical, and optical properties of hydrogenated polycrystalline silicon carbide (poly-SiC{sub x}:H) thin films deposited at 600 °C with different annealing temperatures has been performed. In the as-deposited state, SiC{sub x}:H thin films show a polycrystalline structure. The crystallinity degree can be further improved with the increase of the postdeposition annealing temperature. The resulting process produced free-standing 2-μm-thick SiC membranes up to 70 mm in diameter with root mean square roughness of 3.384 nm and optical transparency of about 70% at 632.8 nm wavelength. The large-area SiC membranes made out of poly-SiC{sub x}:H thin films deposited at a relatively high temperature can be beneficial for a wide variety of applications, such as x-ray diffractive optical elements, optical and mechanical filtering, lithography mask, lightweight space telescopes, etc.

  9. Effect of technique parameters on characteristics of hydrogen-free DLC films deposited by surface wave-sustained plasma

    NASA Astrophysics Data System (ADS)

    Xu, Junqi; Kousaka, Hiroyuki; Umehara, Noritsugu; Diao, Dongfeng

    2006-01-01

    Hydrogen-free diamond-like carbon (DLC) films were deposited by a new-type surface wave-sustained plasma physical vapor deposition (SWP-PVD) system under various technique conditions. Electron density was measured by a Langmuir probe, while the film thickness and hardness were characterized using a surface profilometer and a nanoindenter, respectively. Surface morphology was investigated by an atomic force microscope (AFM). It was found that the electron density and deposition rate increased following the increase in microwave power, target voltage, or gas pressure. The typical electron density and deposition rate were about 1.87-2.04×10 11 cm -3 and 1.61-14.32 nm/min respectively. AFM images indicated that the grains of films changes as the technique parameters vary. The optical constants, refractive index n and extinction coefficient k, were obtained using an optical ellipsometry. With the increase in microwave power from 150 to 270 W, the extinction coefficient of DLC films increased from 0.05 to 0.27 while the refractive index decreased from 2.31 to 2.18.

  10. On precursor self-organization upon the microwave vacuum-plasma deposition of submonolayer carbon coatings on silicon (100) crystals

    SciTech Connect

    Yafarov, R. K.

    2015-03-15

    Scanning atomic-force and electron microscopies are used to study the self-organization kinetics of nanoscale domains upon the deposition of submonolayer carbon coatings on silicon (100) in the microwave plasma of low-pressure ethanol vapor. Model mechanisms of how silicon-carbon domains are formed are suggested. The mechanisms are based on Langmuir’s model of adsorption from the precursor state and modern concepts of modification of the equilibrium structure of the upper atomic layer in crystalline semiconductors under the influence of external action.

  11. Enhanced photocatalytic performance in atomic layer deposition grown TiO{sub 2} thin films via hydrogen plasma treatment

    SciTech Connect

    Sasinska, Alexander; Singh, Trilok; Wang, Shuangzhou; Mathur, Sanjay; Kraehnert, Ralph

    2015-01-15

    The authors report the effect of hydrogen plasma treatment on TiO{sub 2} thin films grown by atomic layer deposition as an effective approach for modifying the photoanode materials in order to enhance their photoelectrochemical performance. Hydrogen plasma treated TiO{sub 2} thin films showed an improved absorption in the visible spectrum probably due to surface reduction. XPS analysis confirmed the formation of Ti{sup 3+} states upon plasma treatment. Hydrogen plasma treatment of TiO{sub 2} films enhanced the measured photocurrent densities by a factor of 8 (1 mA/cm{sup 2} at 0.8 V versus normal hydrogen electrode) when compared to untreated TiO{sub 2} (0.12 mA/cm{sup 2}). The enhancement in photocurrent is attributed to the formation of localized electronic states in mid band-gap region, which facilitate efficient separation and transportation of photo excited charge carriers in the UV region of electromagnetic spectrum.

  12. Mass densification and defect restoration in chemical vapor deposition silicon dioxide film using Ar plasma excited by microwave

    SciTech Connect

    Kawase, Kazumasa Motoya, Tsukasa; Uehara, Yasushi; Teramoto, Akinobu; Suwa, Tomoyuki; Ohmi, Tadahiro

    2014-09-01

    Silicon dioxide (SiO{sub 2}) films formed by chemical vapor deposition (CVD) have been treated with Ar plasma excited by microwave. The changes of the mass densities, carrier trap densities, and thicknesses of the CVD-SiO{sub 2} films with the Ar plasma treatments were investigated. The mass density depth profiles were estimated with X-Ray Reflectivity (XRR) analysis using synchrotron radiation. The densities of carrier trap centers due to defects of Si-O bond network were estimated with X-ray Photoelectron Spectroscopy (XPS) time-dependent measurement. The changes of the thicknesses due to the oxidation of Si substrates were estimated with the XRR and XPS. The mass densities of the CVD-SiO{sub 2} films are increased by the Ar plasma treatments. The carrier trap densities of the films are decreased by the treatments. The thicknesses of the films are not changed by the treatments. It has been clarified that the mass densification and defect restoration in the CVD-SiO{sub 2} films are caused by the Ar plasma treatments without the oxidation of the Si substrates.

  13. Characterization of low temperature graphene synthesis in inductively coupled plasma chemical vapor deposition process with optical emission spectroscopy.

    PubMed

    Ma, Yifei; Kim, Daekyoung; Jang, Haegyu; Cho, Sung Min; Chae, Heeyeop

    2014-12-01

    Low-temperature graphene was synthesized at 400 degrees C with inductively coupled plasma chemical vapor deposition (PECVD) process. The effects of plasma power and flow rate of various carbon containing precursors and hydrogen on graphene properties were investigated with optical emission spectroscopy (OES). Various radicals monitored by OES were correlated with graphene film properties such as sheet resistance, I(D)/I(G) ratio of Raman spectra and transparency. C2H2 was used as a main precursor and the increase of plasma power enhanced intensity of carbon (C2) radical OES intensity in plasma, reduced sheet resistance and increased transparency of graphene films. The reduced flow rate of C2H2 decreased sheet resistance and increased transparency of graphene films in the range of this study. H2 addition was found to increase sheet resistance, transparency and attributed to reduction of graphene grain and etching graphene layers. OES analysis showed that C2 radicals contribute to graphite networking and sheet resistance reduction. TEM and AFM were applied to provide credible information that graphene had been successfully grown at low temperature.

  14. RF plasma MOCVD of Y2O3 thin films: Effect of RF self-bias on the substrates during deposition

    NASA Astrophysics Data System (ADS)

    Chopade, S. S.; Barve, S. A.; Thulasi Raman, K. H.; Chand, N.; Deo, M. N.; Biswas, A.; Rai, Sanjay; Lodha, G. S.; Rao, G. M.; Patil, D. S.

    2013-11-01

    Yttrium oxide (Y2O3) thin films have been deposited by radio frequency plasma assisted metal organic chemical vapor deposition (MOCVD) process using (2,2,6,6-tetramethyl-3,5-heptanedionate) yttrium (commonly known as Y(thd)3) precursor in a plasma of argon and oxygen gases at a substrate temperature of 350 °C. The films have been deposited under influence of varying RF self-bias (-50 V to -175 V) on silicon, quartz, stainless steel and tantalum substrates. The deposited coatings are characterized by glancing angle X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and scanning electron microscopy (SEM). GIXRD and FTIR results indicate deposition of Y2O3 (BCC structure) in all cases. However, XPS results indicate nonstoichiometric cubic phase deposition on the surface of deposited films. The degree of nonstoichiometry varies with bias during deposition. Ellipsometry results indicate that the refractive index for the deposited films is varying from 1.70 to 1.83 that is typical for Y2O3. All films are transparent in the investigated wavelength range 300-1200 nm. SEM results indicate that the microstructure of the films is changing with applied bias. Results indicate that it is possible to deposit single phase cubic Y2O3 thin films at low substrate temperature by RF plasma MOCVD process. RF self-bias that decides about the energy of impinging ions on the substrates plays an important role in controlling the texture of deposited Y2O3 films on the substrates. Results indicate that to control the structure of films and its texture, it is important to control the bias on the substrate during deposition. The films deposited at high bias level show degradation in the crystallinity and reduction of thickness.

  15. Extension of Plasma Source Ion Implantation to Ion Beam Enhanced Deposition

    DTIC Science & Technology

    1989-10-05

    22, 90 (1989). Nitriding/ Carburizing , Cincinnati, Ohio, Septem- 51. M. A. Lieberman, "Model of Plasma Immersion Ion ber 16-20, 1989. Implantation...TYPE AND OATES COVERED 1990 Final I Feb 89 - 31 Jul 89 4. TITLE AND SUBTITLE 5. FUNDING NUMBERS Extension of Plasma Source Ion Implantation to Ion Beam...UL NSN 7540-01.280-5500 Standard Form 298 (Rev 2-89) *’@Krab OV ANSI St 139-IS t9-0 Extension of Plasma Source Ion Implantation to Ion Beam Enhanced

  16. Self-enhanced plasma discharge effect in the deposition of diamond-like carbon films on the inner surface of slender tube

    NASA Astrophysics Data System (ADS)

    Xu, Yi; Li, Liuhe; Luo, Sida; Lu, Qiuyuan; Gu, Jiabin; Lei, Ning; Huo, Chunqin

    2017-01-01

    Enhanced glow discharge plasma immersion ion implantation and deposition (EGD-PIII&D) have been proved to be highly effective for depositing diamond-like carbon (DLC) films on the inner surface of the slender quartz tube with a deposition rate of 1.3 μm/min. Such a high-efficiency DLC films deposition was explained previously as the short electrons mean free path to cause large collision frequency between electrons and neutral particles. However, in this paper, we found that the inner surface material of the tube itself play a vital role on the films deposition. To disclose the mechanism of this phenomenon, the effect of different inner surface materials on plasma discharge was experimentally and theoretically investigated. Then a self-enhancing plasma discharge is discovered. It is found that secondary electrons emitted from the inner surface material, whatever it is the tube inner surface or deposited DLC films, can dramatically enhance the plasma discharge to improve the DLC films deposition rate.

  17. Protein adsorption and cell adhesion on three-dimensional polycaprolactone scaffolds with respect to plasma modification by etching and deposition techniques

    NASA Astrophysics Data System (ADS)

    Myung, Sung Woon; Ko, Yeong Mu; Kim, Byung Hoon

    2014-11-01

    In this work, protein adsorption and cell adhesion on three-dimensional (3D) polycaprolactone (PCL) scaffolds treated by plasma etching and deposition were performed. The 3D PCL scaffold used as a substrate of a bone tissue was fabricated by recent rapid prototype techniques. To increase surface properties, such as hydrophilicity, roughness, and surface chemistry, through good protein adhesion on scaffolds, oxygen (O2) plasma etching and acrylic acid or allyamine plasma deposition were performed on the 3D PCL scaffolds. The O2 plasma etching induced the formation of random nanoporous structures on the roughened surfaces of the 3D PCL scaffolds. The plasma deposition with acrylic acid and allyamine induced the chemical modification for introducing a functional group. The protein adsorption increased on the O2 plasma-etched surface compared with an untreated 3D PCL scaffold. MC3T3-E1 cells adhered bioactively on the etched and deposited surface compared with the untreated surface. The present plasma modification might be sought as an effective technique for enhancing protein adsorption and cell adhesion.

  18. Deposition of lithium on a plasma edge probe in TFTR -- Behavior of lithium-painted walls interacting with edge plasmas

    SciTech Connect

    Hirooka, Y.; Ashida, K.; Kugel, H.

    1998-05-01

    Recent observations have indicated that lithium pellet injection wall conditioning plays an important role in achieving the enhanced supershot regime in TFTR. However, little is understood about the behavior of lithium-coated limiter walls, interacting with edge plasmas. In the final campaign of TFTR, a cylindrical carbon fiber composite probe was inserted into the boundary plasma region and exposed to ohmically-heated deuterium discharges with lithium pellet injection. The ion-drift side probe surface exhibits a sign of codeposition of lithium, carbon, oxygen, and deuterium, whereas the electron side essentially indicates high-temperature erosion. It is found that lithium is incorporated in these codeposits in the form of oxide at the concentration of a few percent. In the electron side, lithium has been found to penetrate deeply into the probe material, presumably via rapid diffusion through interplane spaces in the graphite crystalline. Though it is not conclusive, materials mixing in the carbon and lithium system appears to be a key process in successful lithium wall conditioning.

  19. Properties of the particles deposited from a low-temperature plasma arc discharge

    NASA Astrophysics Data System (ADS)

    Smolanov, N. A.

    2017-01-01

    The possible mechanisms for the formation of fractal particles of the plasma arc have been studies. The existence of dust structures of two types strongly and weakly magnetic was found. Paramagnetism of particles is the result of the synthesis of titanium carbonitride with embedded (encapsulated) magnetic substrate elements. The magnetization of particles indicates the presence in the test nanostructure particles. inhomogeneous distribution of electric charges in motion conducting bodies (drops) in a magnetized plasma is the reason for the formation of dust particles.

  20. Optical characteristics of nanocrystalline Al{sub x}Ga{sub 1−x}N thin films deposited by hollow cathode plasma-assisted atomic layer deposition

    SciTech Connect

    Goldenberg, Eda; Ozgit-Akgun, Cagla; Biyikli, Necmi; Kemal Okyay, Ali

    2014-05-15

    Gallium nitride (GaN), aluminum nitride (AlN), and Al{sub x}Ga{sub 1−x}N films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200 °C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and Al{sub x}Ga{sub 1−x}N films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2 nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4 nm when the annealing duration increased from 30 min to 2 h (800 °C). For all films, the average optical transmission was ∼85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and Al{sub x}Ga{sub 1−x}N were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (λ = 550 nm) with the increased Al content x (0 ≤ x ≤ 1), while the extinction coefficients (k) were approximately zero in the VIS spectrum (>400 nm). Postdeposition annealing at 900 °C for 2 h considerably lowered the refractive index value of GaN films (2.33–1.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95 eV, and it decreased to 3.90 eV for films annealed at 800 °C for 30 min and 2 h. On the other hand, this value increased to 4.1 eV for GaN films annealed at 900 °C for 2 h. This might be caused by Ga{sub 2}O{sub 3} formation and following phase change. The optical bandgap value of as-deposited Al{sub x}Ga{sub 1−x}N films decreased from 5.75 to 5.25 eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not

  1. Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2.

    PubMed

    Fang, Guo-Yong; Xu, Li-Na; Cao, Yan-Qiang; Wang, Lai-Guo; Wu, Di; Li, Ai-Dong

    2015-01-25

    Plasma-enhanced atomic layer deposition (PE-ALD) has been applied to prepare high-quality ultrathin films for microelectronics, catalysis, and energy applications. The possible pathways for SiO2 PE-ALD using aminosilanes and O2 plasma have been investigated by density functional theory calculations. The silane half-reaction between SiH4 and surface -OH is very difficult and requires a high activation free energy of 57.8 kcal mol(-1). The introduction of an aminosilane, such as BDMAS, can reduce the activation free energy to 11.0 kcal mol(-1) and the aminosilane plays the role of a self-catalyst in Si-O formation through the relevant half-reaction. Among the various species generated in O2 plasma, (3)O2 is inactive towards surface silane groups, similar to ordinary oxygen gas. The other three species, (1)O2, (1)O, and (3)O, can strongly oxidize surface silane groups through one-step or stepwise pathways. In the (3)O pathway, the triplet must be converted into the singlet and follow the (1)O pathway. Meanwhile, both (1)O and (3)O can decay to (1)O2 and enter into the relevant oxidation pathway. The concept of self-catalysis of aminosilanes may be invoked to design and prepare more effective Si precursors for SiO2 ALD. At the same time, the mechanism of strong surface oxidation by O2 plasma may be exploited in the PE-ALD preparation of other oxides, such as Al2O3, HfO2, ZrO2, and TiO2.

  2. Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon.

    PubMed

    Song, Sannian; Yao, Dongning; Song, Zhitang; Gao, Lina; Zhang, Zhonghua; Li, Le; Shen, Lanlan; Wu, Liangcai; Liu, Bo; Cheng, Yan; Feng, Songlin

    2015-01-01

    Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth technique for the phase-changing chalcogenide material. In this study, Ge2Sb2Te5 (GST) and GeSb8Te thin films were deposited by plasma-enhanced atomic layer deposition (ALD) method using Ge [(CH3)2 N]4, Sb [(CH3)2 N]3, Te(C4H9)2 as precursors and plasma-activated H2 gas as reducing agent of the metallorganic precursors. Compared with GST-based device, GeSb8Te-based device exhibits a faster switching speed and reduced reset voltage, which is attributed to the growth-dominated crystallization mechanism of the Sb-rich GeSb8Te films. These results show that ALD is an attractive method for preparation of phase-change materials.

  3. Evidence of local power deposition and electron heating by a standing electromagnetic wave in electron-cyclotron-resonance plasma.

    PubMed

    Durocher-Jean, A; Stafford, L; Dap, S; Makasheva, K; Clergereaux, R

    2014-09-01

    Microwave plasmas excited at electron-cyclotron resonance were studied in the 0.5-15 mTorr pressure range. In contrast with low-limit pressure conditions where the plasma emission highlights a fairly homogeneous spatial structure, a periodic spatial modulation (period ∼6.2 cm) appeared as pressure increased. This feature is ascribed to a local power deposition (related to the electron density) due to the presence of a standing electromagnetic wave created by the feed electromagnetic field (2.45 GHz) in the cavity formed by the reactor walls. Analysis of the electron energy probability function by Langmuir probe and optical emission spectroscopy further revealed the presence of a high-energy tail that showed strong periodic spatial modulation at higher pressure. The spatial evolution of the electron density and of the characteristic temperature of these high-energy electrons coincides with the nodes (maximum) and antinodes (minimum) of the standing wave. These spatially-modulated power deposition and electron heating mechanisms are then discussed.

  4. DLC coating of interior surfaces of steel tubes by low energy plasma source ion implantation and deposition

    NASA Astrophysics Data System (ADS)

    Baba, K.; Hatada, R.; Flege, S.; Ensinger, W.

    2014-08-01

    The plasma source ion implantation (PSII) process can be used for the treatment of the interior surfaces of tubes. Typically, this is done with higher ion energies of 10 keV or more. The resulting film thickness and the properties of the DLC film usually show a dependence on position, i.e. the distance from the edge of the tube. In order to investigate whether this effect is also present with lower energies (and if so, to what extent), deposition was carried out at negative pulse voltages of -5 kV. A diamond-like carbon (DLC) film was deposited by using acetylene as the plasma gas. The substrate consisted of stainless steel tubes with an inner diameter of 20 mm and a length of 100 and 200 mm, respectively. The distribution of the thickness, film composition, structure, surface morphology and friction coefficient as a function of the position inside the tube were investigated. The results of this low energy treatment were compared with investigations which employed higher ion energies.

  5. Analysis of Oxidation State of Multilayered Catalyst Thin Films for Carbon Nanotube Growth Using Plasma-Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Okita, Atsushi; Ozeki, Atsushi; Suda, Yoshiyuki; Nakamura, Junji; Oda, Akinori; Bhattacharyya, Krishnendu; Sugawara, Hirotake; Sakai, Yosuke

    2006-10-01

    We synthesized vertically aligned carbon nanotubes (CNTs) using multilayered catalyst thin films (Fe/Al2O3 and Al2O3/Fe/Al2O3) by RF (13.56 MHz) CH4/H2/Ar plasma-enhanced chemical vapor deposition. Pretreatment of the catalyst is crucial for CNT growth. In this paper, we analyzed the effect of catalyst reduction on CNT growth. Catalyst thin films on substrates were reduced by H2 plasma pretreatment at 550 °C to form nanometer-sized catalyst particles. The multilayered thin films were analyzed; the chemical composition and oxidation state by X-ray photoelectron spectroscopy (XPS) and the surface morphology by scanning electron microscopy (SEM). The Fe 2p peak of the XPS spectra showed that FexOy in the as-deposited catalyst was effectively reduced to Fe by a pretreatment of duration 4 min. Using this catalyst, we obtained CNTs with an average diameter of 10.7 nm and an average length of 5.3 μm. However, pretreatment longer than 4 min resulted in shorter CNTs and the Fe peak was shifted from Fe to Fe3O4. These transitions (Fe2O3→Fe3O4→Fe→Fe3O4) can be explained by the enthalpy of the oxides. This result indicates the presence of an optimum ratio between Fe and FexOy to maximize the CNT lengths.

  6. Visible Light Photocatalysis with Nitrogen-Doped Titanium Dioxide Nanoparticles Prepared by Plasma Assisted Chemical Vapor Deposition

    SciTech Connect

    Buzby,S.; Barakat, M.; Lin, H.; Ni, C.; Rykov, S.; Chen, J.; Shah, S.

    2006-01-01

    Nitrogen-doped TiO{sub 2} nanoparticles were synthesized via plasma assisted metal organic chemical vapor deposition. Nitrogen dopant concentration was varied from 0 to 1.61 at. %. The effect of nitrogen ion doping on visible light photocatalysis has been investigated. Samples were analyzed by various analytical techniques such as x-ray diffraction, transmission electron microscopy, x-ray photoelectron spectroscopy, and near-edge x-ray absorption fine structure. Titanium tetraisopropoxide was used as the titanium precursor, while rf-plasma-decomposed ammonia was used as the source for nitrogen doping. The N-doped TiO{sub 2} nanoparticles were deposited on stainless steel mesh under a flow of Ar and O2 gases at 600 {sup o}C in a tube reactor. The photocatalytic activity of the prepared N-doped TiO{sub 2} samples was tested by the degradation of 2-chlorophenol (2-CP) in an aqueous solution using a visible lamp equipped with an UV filter. The efficiency of photocatalytic oxidation of 2-CP was measured using high performance liquid chromatography. Results obtained revealed the formation of N-doped TiO{sub 2} samples as TiO{sub 2-x}N{sub x}, and a corresponding increase in the visible light photocatalytic activity.

  7. Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment

    SciTech Connect

    Huang, Hsin-Wei; Chang, Wen-Chih; Lin, Su-Jien; Chueh, Yu-Lun

    2012-12-15

    An inductively coupled plasma technique (ICP), namely, remote-plasma treatment was introduced to ionize the water molecules as the precursor for the deposition of ZnO film via the atomic layer deposition processes. Compared with the H{sub 2}O gas as the precursor for the ALD growth, the ionized water molecules can provide a lesser energy to uniformly stabilize oxidization processes, resulting in a better film quality with a higher resistivity owing to less formation of intrinsic defects at a lower growth temperature. The relationship between resistivity and formation mechanisms have been discussed and investigated through analyses of atomic force microscopy, photonluminescence, and absorption spectra, respectively. Findings indicate that the steric hindrance of the ligands plays an important rule for the ALD-ZnO film sample with the ICP treatment while the limited number of bonding sites will be dominant for the ALD-ZnO film without the ICP treatment owing to decreasing of the reactive sites via the ligand-exchange reaction during the dissociation process. Finally, the enhanced aspect-ratio into the anodic aluminum oxide with the better improved uniform coating of ZnO layer after the ICP treatment was demonstrated, providing an important information for a promising application in electronics based on ZnO ALD films.

  8. Metal-boride phase formation on tungsten carbide (WC-Co) during microwave plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Johnston, Jamin M.; Catledge, Shane A.

    2016-02-01

    Strengthening of cemented tungsten carbide by boriding is used to improve the wear resistance and lifetime of carbide tools; however, many conventional boriding techniques render the bulk carbide too brittle for extreme conditions, such as hard rock drilling. This research explored the variation in metal-boride phase formation during the microwave plasma enhanced chemical vapor deposition process at surface temperatures from 700 to 1100 °C. We showed several well-adhered metal-boride surface layers consisting of WCoB, CoB and/or W2CoB2 with average hardness from 23 to 27 GPa and average elastic modulus of 600-730 GPa. The metal-boride interlayer was shown to be an effective diffusion barrier against elemental cobalt; migration of elemental cobalt to the surface of the interlayer was significantly reduced. A combination of glancing angle X-ray diffraction, electron dispersive spectroscopy, nanoindentation and scratch testing was used to evaluate the surface composition and material properties. An evaluation of the material properties shows that plasma enhanced chemical vapor deposited borides formed at substrate temperatures of 800 °C, 850 °C, 900 °C and 1000 °C strengthen the material by increasing the hardness and elastic modulus of cemented tungsten carbide. Additionally, these boride surface layers may offer potential for adhesion of ultra-hard carbon coatings.

  9. Hydrogen-Free Plasma-Enhanced Chemical Vapor Deposition of Silicon Dioxide Using Tetra-isocyanate-silane (Si(NCO) 4)

    NASA Astrophysics Data System (ADS)

    Idris, Irman; Sugiura, Osamu

    1995-06-01

    Deposition of silicon dioxide by plasma-enhanced chemical vapor deposition (PECVD) technique using tetra-isocyanate-silane (Si(NCO)4 : TICS) and oxygen for interlayer dielectric film application is proposed. Film properties strongly depend on the gas composition. The film which was deposited under an oxygen-rich condition was water-free after deposition. The film density, refractive index, resistivity, and dielectric constant were 2.3 g/cm3, 1.46, 5×1014 Ω·cm, and 3.6, respectively. The etch rate by buffered HF was 330 nm/min.

  10. Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

    NASA Astrophysics Data System (ADS)

    Naito, Teruki; Konno, Nobuaki; Yoshida, Yukihisa

    2016-07-01

    Open air silicon deposition was performed by combining silane-free atmospheric pressure plasma-enhanced chemical transport and a newly developed local ambient gas control technology. The effect of air contamination on silicon deposition was investigated using a vacuum chamber, and the allowable air contamination level was confirmed to be 3 ppm. The capability of the local ambient gas control head was investigated numerically and experimentally. A safe and clean process environment with air contamination less than 1 ppm was achieved. Combining these technologies, a microcrystalline silicon film was deposited in open air, the properties of which were comparable to those of silicon films deposited in a vacuum chamber.

  11. Growth of carbon nanofibers in plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Denysenko, Igor; Ostrikov, Kostya; Tam, Eugene

    2008-10-01

    A theoretical model describing the plasma-assisted growth of carbon nanofibers with metal catalyst particles on top is proposed. Using the model, the plasma-related effects on the nanofiber growth parameters such us the surface diffusion growth rate, the effective carbon flux to the catalyst surface, the characteristic residence time and diffusion length of carbon on the catalyst surface, and the surface coverages, have been studied. It has been found how these parameters depend on the catalyst surface temperature and ion and etching gas fluxes to the catalyst surface. The optimum conditions under which a low-temperature plasma environment can benefit the carbon nanofiber growth are formulated. It has been also found how the plasma environment affects the temperature distribution over the length of the carbon nanofibers. Conditions when the temperature of the catalyst nanoparticles is higher than the temperature of the substrate holder are determined. The results here are in a good agreement with the available experimental data on the carbon nanofiber growth and can be used for optimizing synthesis of nanoassemblies in low-temperature plasma-assisted nanofabrication.

  12. A structure zone diagram including plasma based deposition and ion etching

    SciTech Connect

    Anders, Andre

    2009-10-14

    An extended structure zone diagram is proposed that includes energetic deposition, characterized by a large flux of ions typical for deposition by filtered cathodic arcs and high power impulse magnetron sputtering. The axes are comprised of a generalized homologous temperature, the normalized kinetic energy flux, and the net film thickness, which can be negative due to ion etching. It is stressed that the number of primary physical parameters affecting growth by far exceeds the number of available axes in such a diagram and therefore it can only provide an approximate and simplified illustration of the growth condition?structure relationships.

  13. The effect of heat- or ultra violet ozone-treatment of titanium on complement deposition from human blood plasma.

    PubMed

    Linderbäck, Paula; Harmankaya, Necati; Askendal, Agneta; Areva, Sami; Lausmaa, Jukka; Tengvall, Pentti

    2010-06-01

    Titanium (Ti) is a well known metallic biomaterial extensively used in dental, orthopaedic-, and occasionally also in blood contacting applications. It integrates well to bone and soft tissues, and is shown upon blood plasma contact to activate the intrinsic pathway of coagulation and bind complement factor 3b. The material properties depend largely on those of the nm-thick dense layer of TiO(2) that becomes rapidly formed upon contact with air and water. The spontaneously formed amorphous Ti-oxide has a pzc approximately 5-6 and its water solubility is at the order of 1-2 micromolar. It is often subjected to chemical- and heat treatments in order to increase the anatase- and rutile crystallinity, to modify the surface topography and to decrease the water solubility. In this work, we prepared sol-gel derived titanium and smooth PVD titanium surfaces, and analysed their oxide and protein deposition properties in human blood plasma before and after annealing at 100-500 degrees C or upon UVO-treatment for up to 96 hours. The blood plasma results show that complement deposition vanished irreversibly after heat treatment at 250-300 degrees C for 30 minutes or after UVO exposure for 24 hours or longer. XPS and infrared spectroscopy indicated change of surface water/hydroxyl binding upon the heat- and UVO treatments, and increased Ti oxidation. XRD analysis confirmed an increased crystallinity and both control (untreated) and annealed smooth titanium displayed low XRD-signals indicating some nanocrystallinity, with predominantly anatase phase. The current results show that the behaviour of titanium dioxide in blood contact can be controlled through relatively simple means, such as mild heating and illumination in UV-light, which both likely irreversibly change the stoichiometry and structure of the outmost layers of titanium dioxide and its OH/H(2)O binding characteristics.

  14. Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

    NASA Astrophysics Data System (ADS)

    Glavin, Nicholas R.; Muratore, Christopher; Jespersen, Michael L.; Hu, Jianjun; Fisher, Timothy S.; Voevodin, Andrey A.

    2015-04-01

    Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B+, B*, N+, N*, and molecular species including N2*, N2+, and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N+ ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N+ ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good thicknesses uniformity over macroscopic areas.

  15. Growth mechanism of carbon nanotubes grown by microwave-plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Okai, M.; Muneyoshi, T.; Yaguchi, T.; Sasaki, S.; Shinohara, H.

    2001-11-01

    To understand the growth mechanism of carbon nanotubes, we have investigated the initial stage of carbon nanotube growth by microwave-plasma-enhanced CVD on a metal substrate. Metal droplets with diameters of 20-180 nm appeared on the substrate surface after plasma cleaning. These metal droplets operate as a catalyst for the growth of carbon nanotubes. The grown nanotubes had a piled-cone structure with metal particles at the top. The diameters of the carbon nanotubes ranged from 60 to 80 nm and the metal particles at the top were the same sizes.

  16. Modification of the Surface Properties of Polyimide Films using POSS Deposition and Oxygen Plasma Exposure

    NASA Technical Reports Server (NTRS)

    Wohl, Christopher J.; Belcher, Marcus A.; Ghose, Sayata; Connell, John W.

    2008-01-01

    Topographically rich surfaces were generated by spray-coating organic solutions of a polyhedral oligomeric silsesquioxane, octakis (dimethylsilyloxy) silsesquioxane (POSS), on Kapton HN films and exposing them to radio frequency generated oxygen plasma. Changes in both surface chemistry and topography were observed. High-resolution scanning electron microscopy indicated substantial modification of the POSS-coated polyimide surface topographies as a result of oxygen plasma exposure. Water contact angles varied from 104 deg for unexposed POSS-coated surfaces to approximately 5 deg, for samples exposed for 5 h. Modulation of the dispersive and polar contributions to the surface energy was determined using van Oss Good Chaudhury theory.

  17. [Optical emission analyses of N2/TMG ECR plasma for deposition of GaN film].

    PubMed

    Fu, Si-Lie; Wang, Chun-An; Chen, Jun-Fang

    2013-04-01

    The optical emission spectroscopy of hybrid N2/trimethylgallium (TMG) plasma in an ECR-PECVD system was investigated. The results indicate that the TMG gas is strongly dissociated into Ga*, CH and H even under self-heating condition. Ga species and nitrogen molecule in metastable state are dominant in hybrid ECR plasma. The concentration of metastable nitrogen molecule increases with the microwave power. On the other hand, the concentration of excited nitrogen molecules and of nitrogen ion decreases when the microwave power is higher than 400 W.

  18. Plasma-deposited germanium nitride gate insulators for indium phosphide metal-insulator-semiconductor field-effect transistors

    NASA Technical Reports Server (NTRS)

    Johnson, Gregory