Study of electromagnetic wave scattering from an inhomogeneous plasma layer using Green's function volume integral equation method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soltanmoradi, Elmira; Shokri, Babak, E-mail: b-shokri@sbu.ac.ir; Laser and Plasma Research Institute, Shahid Beheshti University, G. C., Evin, Tehran 19839-63113

Gigahertz electromagnetic wave scattering from an inhomogeneous collisional plasma layer with bell-like and Epstein electron density distributions is studied by the Green's function volume integral equation method to find the reflectance, transmittance, and absorbance coefficients of this inhomogeneous plasma. Also, the effects of the frequency of the electromagnetic wave, plasma parameters, such as collision frequency, electron density, and plasma thickness, and the effects of the profile of the electron density on the electromagnetic wave scattering from this plasma slab are investigated. According to the results, when the electron density, collision frequency, and plasma thickness are increased, collisional absorbance is enhanced,more » and as a result, the absorbance bandwidth of plasma is broadened. Moreover, this broadening is more evident for plasma with bell-like electron density profile. Also, the bandwidth of the frequency and the range of pressure in which plasma behaves as a good reflector are determined in this article. According to the results, the bandwidth of the frequency is decreased for thicker plasma with bell-like profile, while it does not vary for a different plasma thickness with Epstein profile. Moreover, the range of the pressure is decreased for bell-like profile in comparison with Epstein profile. Furthermore, due to the sharp inhomogeneity of the Epstein profile, the coefficients of plasma that are uniform for plasma with bell-like profile are changed for plasma with Epstein profile, and some perturbations are seen.« less

The scaling of relativistic double-year widths - Poisson-Vlasov solutions and particle-in-cell simulations

NASA Technical Reports Server (NTRS)

Sulkanen, Martin E.; Borovsky, Joseph E.

1992-01-01

The study of relativistic plasma double layers is described through the solution of the one-dimensional, unmagnetized, steady-state Poisson-Vlasov equations and by means of one-dimensional, unmagnetized, particle-in-cell simulations. The thickness vs potential-drop scaling law is extended to relativistic potential drops and relativistic plasma temperatures. The transition in the scaling law for 'strong' double layers suggested by analytical two-beam models by Carlqvist (1982) is confirmed, and causality problems of standard double-layer simulation techniques applied to relativistic plasma systems are discussed.

Simulation of plasma double-layer structures

NASA Technical Reports Server (NTRS)

Borovsky, J. E.; Joyce, G.

1982-01-01

Electrostatic plasma double layers are numerically simulated by means of a magnetized 2 1/2 dimensional particle in cell method. The investigation of planar double layers indicates that these one dimensional potential structures are susceptible to periodic disruption by instabilities in the low potential plasmas. Only a slight increase in the double layer thickness with an increase in its obliqueness to the magnetic field is observed. Weak magnetization results in the double layer electric field alignment of accelerated particles and strong magnetization results in their magnetic field alignment. The numerical simulations of spatially periodic two dimensional double layers also exhibit cyclical instability. A morphological invariance in two dimensional double layers with respect to the degree of magnetization implies that the potential structures scale with Debye lengths rather than with gyroradii. Electron beam excited electrostatic electron cyclotron waves and (ion beam driven) solitary waves are present in the plasmas adjacent to the double layers.

Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH3)3

PubMed Central

Filonovich, Sergej Alexandrovich; Águas, Hugo; Busani, Tito; Vicente, António; Araújo, Andreia; Gaspar, Diana; Vilarigues, Marcia; Leitão, Joaquim; Fortunato, Elvira; Martins, Rodrigo

2012-01-01

We have characterized the structure and electrical properties of p-type nanocrystalline silicon films prepared by radio-frequency plasma-enhanced chemical vapor deposition and explored optimization methods of such layers for potential applications in thin-film solar cells. Particular attention was paid to the characterization of very thin (∼20 nm) films. The cross-sectional morphology of the layers was studied by fitting the ellipsometry spectra using a multilayer model. The results suggest that the crystallization process in a high-pressure growth regime is mostly realized through a subsurface mechanism in the absence of the incubation layer at the substrate-film interface. Hydrogen plasma treatment of a 22-nm-thick film improved its electrical properties (conductivity increased more than ten times) owing to hydrogen insertion and Si structure rearrangements throughout the entire thickness of the film. PMID:27877504

Method for depositing high-quality microcrystalline semiconductor materials

DOEpatents

Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

2011-03-08

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Characterization of metal-supported axial injection plasma sprayed solid oxide fuel cells with aqueous suspension plasma sprayed electrolyte layers

NASA Astrophysics Data System (ADS)

Waldbillig, D.; Kesler, O.

A method for manufacturing metal-supported SOFCs with atmospheric plasma spraying (APS) is presented, making use of aqueous suspension feedstock for the electrolyte layer and dry powder feedstock for the anode and cathode layers. The cathode layer was deposited first directly onto a metal support, in order to minimize contact resistance, and to allow the introduction of added porosity. The electrolyte layers produced by suspension plasma spraying (SPS) were characterized in terms of thickness, permeability, and microstructure, and the impact of substrate morphology on electrolyte properties was investigated. Fuel cells produced by APS were electrochemically tested at temperatures ranging from 650 to 750 °C. The substrate morphology had little effect on open circuit voltage, but substrates with finer porosity resulted in lower kinetic losses in the fuel cell polarization.

Nanostructuring of Palladium with Low-Temperature Helium Plasma

PubMed Central

Fiflis, P.; Christenson, M.P.; Connolly, N.; Ruzic, D.N.

2015-01-01

Impingement of high fluxes of helium ions upon metals at elevated temperatures has given rise to the growth of nanostructured layers on the surface of several metals, such as tungsten and molybdenum. These nanostructured layers grow from the bulk material and have greatly increased surface area over that of a not nanostructured surface. They are also superior to deposited nanostructures due to a lack of worries over adhesion and differences in material properties. Several palladium samples of varying thickness were biased and exposed to a helium helicon plasma. The nanostructures were characterized as a function of the thickness of the palladium layer and of temperature. Bubbles of ~100 nm in diameter appear to be integral to the nanostructuring process. Nanostructured palladium is also shown to have better catalytic activity than not nanostructured palladium. PMID:28347109

Nanostructuring of Palladium with Low-Temperature Helium Plasma.

PubMed

Fiflis, P; Christenson, M P; Connolly, N; Ruzic, D N

2015-11-25

Impingement of high fluxes of helium ions upon metals at elevated temperatures has given rise to the growth of nanostructured layers on the surface of several metals, such as tungsten and molybdenum. These nanostructured layers grow from the bulk material and have greatly increased surface area over that of a not nanostructured surface. They are also superior to deposited nanostructures due to a lack of worries over adhesion and differences in material properties. Several palladium samples of varying thickness were biased and exposed to a helium helicon plasma. The nanostructures were characterized as a function of the thickness of the palladium layer and of temperature. Bubbles of ~100 nm in diameter appear to be integral to the nanostructuring process. Nanostructured palladium is also shown to have better catalytic activity than not nanostructured palladium.

Depletion of solar wind plasma near a planetary boundary

NASA Technical Reports Server (NTRS)

Zwan, B. J.; Wolf, R. A.

1976-01-01

A mathematical model is presented that describes the squeezing of solar wind plasma out along interplanetary magnetic field lines in the region between the bow shock and the effective planetary boundary (in the case of the earth, the magnetopause). In the absence of local magnetic merging the squeezing process should create a 'depletion layer', a region of very low plasma density just outside the magnetopause. Numerical solutions are obtained for the dimensionless magnetohydrodynamic equations describing this depletion process for the case where the solar wind magnetic field is perpendicular to the solar wind flow direction. For the case of the earth, the theory predicts that the density should be reduced by a factor exceeding 2 in a layer about 700-1300 km thick if the Alfven Mach number in the solar wind, is equal to 8. Scaling of the model calculations to Venus and Mars suggests layer thicknesses about 1/10 and 1/15 those of the earth, respectively, neglecting diffusion and ionospheric effects.

Dual Ion Species Plasma Expansion from Isotopically Layered Cryogenic Targets

NASA Astrophysics Data System (ADS)

Scott, G. G.; Carroll, D. C.; Astbury, S.; Clarke, R. J.; Hernandez-Gomez, C.; King, M.; Alejo, A.; Arteaga, I. Y.; Dance, R. J.; Higginson, A.; Hook, S.; Liao, G.; Liu, H.; Mirfayzi, S. R.; Rusby, D. R.; Selwood, M. P.; Spindloe, C.; Tolley, M. K.; Wagner, F.; Zemaityte, E.; Borghesi, M.; Kar, S.; Li, Y.; Roth, M.; McKenna, P.; Neely, D.

2018-05-01

A dual ion species plasma expansion scheme from a novel target structure is introduced, in which a nanometer-thick layer of pure deuterium exists as a buffer species at the target-vacuum interface of a hydrogen plasma. Modeling shows that by controlling the deuterium layer thickness, a composite H+/D+ ion beam can be produced by target normal sheath acceleration (TNSA), with an adjustable ratio of ion densities, as high energy proton acceleration is suppressed by the acceleration of a spectrally peaked deuteron beam. Particle in cell modeling shows that a (4.3 ±0.7 ) MeV per nucleon deuteron beam is accelerated, in a directional cone of half angle 9°. Experimentally, this was investigated using state of the art cryogenic targetry and a spectrally peaked deuteron beam of (3.4 ±0.7 ) MeV per nucleon was measured in a cone of half angle 7°-9°, while maintaining a significant TNSA proton component.

Development of a plasma sprayed ceramic gas path seal for high pressure turbine applications

NASA Technical Reports Server (NTRS)

Shiembob, L. T.

1977-01-01

The plasma sprayed graded layered yittria stabilized zirconia (ZrO2)/metal(CoCrAlY) seal system for gas turbine blade tip applications up to 1589 K (2400 F) seal temperatures was studied. Abradability, erosion, and thermal fatigue characteristics of the graded layered system were evaluated by rig tests. Satisfactory abradability and erosion resistance was demonstrated. Encouraging thermal fatigue tolerance was shown. Initial properties for the plasma sprayed materials in the graded, layered seal system was obtained, and thermal stress analyses were performed. Sprayed residual stresses were determined. Thermal stability of the sprayed layer materials was evaluated at estimated maximum operating temperatures in each layer. Anisotropic behavior in the layer thickness direction was demonstrated by all layers. Residual stresses and thermal stability effects were not included in the analyses. Analytical results correlated reasonably well with results of the thermal fatigue tests. Analytical application of the seal system to a typical gas turbine engine application predicted performance similar to rig specimen thermal fatigue performance. A model for predicting crack propagation in the sprayed ZrO2/CoCrAlY seal system was proposed, and recommendations for improving thermal fatigue resistance were made. Seal system layer thicknesses were analytically optimized to minimize thermal stresses in the abradability specimen during thermal fatigue testing. Rig tests on the optimized seal configuration demonstrated some improvement in thermal fatigue characteristics.

Effects of Plasma ZrN Metallurgy and Shot Peening Duplex Treatment on Fretting Wear and Fretting Fatigue Behavior of Ti6Al4V Alloy.

PubMed

Tang, Jingang; Liu, Daoxin; Zhang, Xiaohua; Du, Dongxing; Yu, Shouming

2016-03-23

A metallurgical zirconium nitride (ZrN) layer was fabricated using glow metallurgy using nitriding with zirconiuming prior treatment of the Ti6Al4V alloy. The microstructure, composition and microhardness of the corresponding layer were studied. The influence of this treatment on fretting wear (FW) and fretting fatigue (FF) behavior of the Ti6Al4V alloy was studied. The composite layer consisted of an 8-μm-thick ZrN compound layer and a 50-μm-thick nitrogen-rich Zr-Ti solid solution layer. The surface microhardness of the composite layer is 1775 HK 0.1 . A gradient in cross-sectional microhardness distribution exists in the layer. The plasma ZrN metallurgical layer improves the FW resistance of the Ti6Al4V alloy, but reduces the base FF resistance. This occurs because the improvement in surface hardness results in lowering of the toughness and increasing in the notch sensitivity. Compared with shot peening treatment, plasma ZrN metallurgy and shot peening composite treatment improves the FW resistance and enhances the FF resistance of the Ti6Al4V alloy. This is attributed to the introduction of a compressive stress field. The combination of toughness, strength, FW resistance and fatigue resistance enhance the FF resistance for titanium alloy.

Effects of Plasma ZrN Metallurgy and Shot Peening Duplex Treatment on Fretting Wear and Fretting Fatigue Behavior of Ti6Al4V Alloy

PubMed Central

Tang, Jingang; Liu, Daoxin; Zhang, Xiaohua; Du, Dongxing; Yu, Shouming

2016-01-01

A metallurgical zirconium nitride (ZrN) layer was fabricated using glow metallurgy using nitriding with zirconiuming prior treatment of the Ti6Al4V alloy. The microstructure, composition and microhardness of the corresponding layer were studied. The influence of this treatment on fretting wear (FW) and fretting fatigue (FF) behavior of the Ti6Al4V alloy was studied. The composite layer consisted of an 8-μm-thick ZrN compound layer and a 50-μm-thick nitrogen-rich Zr–Ti solid solution layer. The surface microhardness of the composite layer is 1775 HK0.1. A gradient in cross-sectional microhardness distribution exists in the layer. The plasma ZrN metallurgical layer improves the FW resistance of the Ti6Al4V alloy, but reduces the base FF resistance. This occurs because the improvement in surface hardness results in lowering of the toughness and increasing in the notch sensitivity. Compared with shot peening treatment, plasma ZrN metallurgy and shot peening composite treatment improves the FW resistance and enhances the FF resistance of the Ti6Al4V alloy. This is attributed to the introduction of a compressive stress field. The combination of toughness, strength, FW resistance and fatigue resistance enhance the FF resistance for titanium alloy. PMID:28773345

Influences of urea and sodium nitrite on surface coating of plasma electrolytic oxidation

NASA Astrophysics Data System (ADS)

Yeh, Shang-Chun; Tsai, Dah-Shyang; Guan, Sheng-Yong; Chou, Chen-Chia

2015-11-01

Urea and sodium nitrite are generally viewed as nitridation additives in the electrolyte for plasma electrolytic oxidation (PEO) of aluminum alloys. We study the influences of these two convenient chemicals in presence of sodium aluminate and find very different effects on film growth. Urea addition enhances the nitrogen content of PEO layer, diminishes the layer thickness, increases the porosity, interferes with the α-alumina formation, and promotes precipitation in the electrolyte. Hence, the electrolytic urea content ought to be maintained less than 45 g dm-3. On the other hand, sodium nitrite behaves like an oxidation additive, more than a nitridation additive. NaNO2 addition effectively introduces nitrogen in the PEO layer at low concentration, yet the nitrogen content of oxide layer decreases with increasing NaNO2 concentration. The effects of NaNO2, such as increasing layer thickness, reducing porosity, promoting α-alumina formation are attributed to oxidation enhancement, not because of nitridation.

Ultrafast Thermal Plasma Preparation of Solid Si Films with Potential Application in Photovoltaic Cells: A Parametric Study

NASA Astrophysics Data System (ADS)

Mostajeran Goortani, Behnam; Gitzhofer, François; Bouyer, Etienne; Mousavi, Mehdi

2009-03-01

An innovative method, namely ultrafast plasma surface melting, is developed to fabricate solid films of silicon with very high rates (150 cm2/min). The method is composed of preparing a suspension of solid particles in a volatile solvent and spreading it on a refractory substrate such as Mo. After solvent evaporation, the resulting porous layer is exposed to the flame tale of inductively coupled RF plasma to sinter and melt the surface particles and to prepare a solid film of silicon. It is shown that by controlling the flow dynamics and heat transfer around the substrate, and managing the kinetic parameters (i.e., exposure time, substrate transport speed, and reaction kinetics) in the reactor, we can produce solid crystalline Si films with the potential applications in photovoltaic cells industry. The results indicate that the optimum formation conditions with a film thickness of 250-700 μm is when the exposure time in the plasma is in the range of 5-12.5 s for a 100 × 50 mm large layer. By combining the Fourier’s law of conduction with the experimental measurements, we obtained an effective heat diffusivity and developed a model to obtain heat diffusion in the porous layer exposed to the plasma. The model further predicts the minimum and maximum exposure time for the substrate in the plasma flame as a function of material properties, the porous layer thickness and of the imposed heat flux.

Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization

PubMed Central

2017-01-01

A novel method to form ultrathin, uniform Al2O3 layers on graphene using reversible hydrogen plasma functionalization followed by atomic layer deposition (ALD) is presented. ALD on pristine graphene is known to be a challenge due to the absence of dangling bonds, leading to nonuniform film coverage. We show that hydrogen plasma functionalization of graphene leads to uniform ALD of closed Al2O3 films down to 8 nm in thickness. Hall measurements and Raman spectroscopy reveal that the hydrogen plasma functionalization is reversible upon Al2O3 ALD and subsequent annealing at 400 °C and in this way does not deteriorate the graphene’s charge carrier mobility. This is in contrast with oxygen plasma functionalization, which can lead to a uniform 5 nm thick closed film, but which is not reversible and leads to a reduction of the charge carrier mobility. Density functional theory (DFT) calculations attribute the uniform growth on both H2 and O2 plasma functionalized graphene to the enhanced adsorption of trimethylaluminum (TMA) on these surfaces. A DFT analysis of the possible reaction pathways for TMA precursor adsorption on hydrogenated graphene predicts a binding mechanism that cleans off the hydrogen functionalities from the surface, which explains the observed reversibility of the hydrogen plasma functionalization upon Al2O3 ALD. PMID:28405059

Method and apparatus to produce and maintain a thick, flowing, liquid lithium first wall for toroidal magnetic confinement DT fusion reactors

DOEpatents

Woolley, Robert D.

2002-01-01

A system for forming a thick flowing liquid metal, in this case lithium, layer on the inside wall of a toroid containing the plasma of a deuterium-tritium fusion reactor. The presence of the liquid metal layer or first wall serves to prevent neutron damage to the walls of the toroid. A poloidal current in the liquid metal layer is oriented so that it flows in the same direction as the current in a series of external magnets used to confine the plasma. This current alignment results in the liquid metal being forced against the wall of the toroid. After the liquid metal exits the toroid it is pumped to a heat extraction and power conversion device prior to being reentering the toroid.

Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers

NASA Astrophysics Data System (ADS)

Xu, C. X.; Chen, W.; Pan, X. H.; Chen, S. S.; Ye, Z. Z.; Huang, J. Y.

2016-09-01

In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12 nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6 nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.

Versatile technique for assessing thickness of 2D layered materials by XPS

NASA Astrophysics Data System (ADS)

Zemlyanov, Dmitry Y.; Jespersen, Michael; Zakharov, Dmitry N.; Hu, Jianjun; Paul, Rajib; Kumar, Anurag; Pacley, Shanee; Glavin, Nicholas; Saenz, David; Smith, Kyle C.; Fisher, Timothy S.; Voevodin, Andrey A.

2018-03-01

X-ray photoelectron spectroscopy (XPS) has been utilized as a versatile method for thickness characterization of various two-dimensional (2D) films. Accurate thickness can be measured simultaneously while acquiring XPS data for chemical characterization of 2D films having thickness up to approximately 10 nm. For validating the developed technique, thicknesses of few-layer graphene (FLG), MoS2 and amorphous boron nitride (a-BN) layer, produced by microwave plasma chemical vapor deposition (MPCVD), plasma enhanced chemical vapor deposition (PECVD), and pulsed laser deposition (PLD) respectively, were accurately measured. The intensity ratio between photoemission peaks recorded for the films (C 1s, Mo 3d, B 1s) and the substrates (Cu 2p, Al 2p, Si 2p) is the primary input parameter for thickness calculation, in addition to the atomic densities of the substrate and the film, and the corresponding electron attenuation length (EAL). The XPS data was used with a proposed model for thickness calculations, which was verified by cross-sectional transmission electron microscope (TEM) measurement of thickness for all the films. The XPS method determines thickness values averaged over an analysis area which is orders of magnitude larger than the typical area in cross-sectional TEM imaging, hence provides an advanced approach for thickness measurement over large areas of 2D materials. The study confirms that the versatile XPS method allows rapid and reliable assessment of the 2D material thickness and this method can facilitate in tailoring growth conditions for producing very thin 2D materials effectively over a large area. Furthermore, the XPS measurement for a typical 2D material is non-destructive and does not require special sample preparation. Therefore, after XPS analysis, exactly the same sample can undergo further processing or utilization.

Versatile technique for assessing thickness of 2D layered materials by XPS

DOE PAGES

Zemlyanov, Dmitry Y.; Jespersen, Michael; Zakharov, Dmitry N.; ...

2018-02-07

X-ray photoelectron spectroscopy (XPS) has been utilized as a versatile method for thickness characterization of various two-dimensional (2D) films. Accurate thickness can be measured simultaneously while acquiring XPS data for chemical characterization of 2D films having thickness up to approximately 10 nm. For validating the developed technique, thicknesses of few-layer graphene (FLG), MoS 2 and amorphous boron nitride (a-BN) layer, produced by microwave plasma chemical vapor deposition (MPCVD), plasma enhanced chemical vapor deposition (PECVD), and pulsed laser deposition (PLD) respectively, were accurately measured. The intensity ratio between photoemission peaks recorded for the films (C 1s, Mo 3d, B 1s) andmore » the substrates (Cu 2p, Al 2p, Si 2p) is the primary input parameter for thickness calculation, in addition to the atomic densities of the substrate and the film, and the corresponding electron attenuation length (EAL). The XPS data was used with a proposed model for thickness calculations, which was verified by cross-sectional transmission electron microscope (TEM) measurement of thickness for all the films. The XPS method determines thickness values averaged over an analysis area which is orders of magnitude larger than the typical area in cross-sectional TEM imaging, hence provides an advanced approach for thickness measurement over large areas of 2D materials. The study confirms that the versatile XPS method allows rapid and reliable assessment of the 2D material thickness and this method can facilitate in tailoring growth conditions for producing very thin 2D materials effectively over a large area. Furthermore, the XPS measurement for a typical 2D material is non-destructive and does not require special sample preparation. Furthermore, after XPS analysis, exactly the same sample can undergo further processing or utilization.« less

Versatile technique for assessing thickness of 2D layered materials by XPS.

PubMed

Zemlyanov, Dmitry Y; Jespersen, Michael; Zakharov, Dmitry N; Hu, Jianjun; Paul, Rajib; Kumar, Anurag; Pacley, Shanee; Glavin, Nicholas; Saenz, David; Smith, Kyle C; Fisher, Timothy S; Voevodin, Andrey A

2018-03-16

X-ray photoelectron spectroscopy (XPS) has been utilized as a versatile method for thickness characterization of various two-dimensional (2D) films. Accurate thickness can be measured simultaneously while acquiring XPS data for chemical characterization of 2D films having thickness up to approximately 10 nm. For validating the developed technique, thicknesses of few-layer graphene (FLG), MoS 2 and amorphous boron nitride (a-BN) layer, produced by microwave plasma chemical vapor deposition (MPCVD), plasma enhanced chemical vapor deposition (PECVD), and pulsed laser deposition (PLD) respectively, were accurately measured. The intensity ratio between photoemission peaks recorded for the films (C 1s, Mo 3d, B 1s) and the substrates (Cu 2p, Al 2p, Si 2p) is the primary input parameter for thickness calculation, in addition to the atomic densities of the substrate and the film, and the corresponding electron attenuation length (EAL). The XPS data was used with a proposed model for thickness calculations, which was verified by cross-sectional transmission electron microscope (TEM) measurement of thickness for all the films. The XPS method determines thickness values averaged over an analysis area which is orders of magnitude larger than the typical area in cross-sectional TEM imaging, hence provides an advanced approach for thickness measurement over large areas of 2D materials. The study confirms that the versatile XPS method allows rapid and reliable assessment of the 2D material thickness and this method can facilitate in tailoring growth conditions for producing very thin 2D materials effectively over a large area. Furthermore, the XPS measurement for a typical 2D material is non-destructive and does not require special sample preparation. Therefore, after XPS analysis, exactly the same sample can undergo further processing or utilization.

Versatile technique for assessing thickness of 2D layered materials by XPS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zemlyanov, Dmitry Y.; Jespersen, Michael; Zakharov, Dmitry N.

X-ray photoelectron spectroscopy (XPS) has been utilized as a versatile method for thickness characterization of various two-dimensional (2D) films. Accurate thickness can be measured simultaneously while acquiring XPS data for chemical characterization of 2D films having thickness up to approximately 10 nm. For validating the developed technique, thicknesses of few-layer graphene (FLG), MoS 2 and amorphous boron nitride (a-BN) layer, produced by microwave plasma chemical vapor deposition (MPCVD), plasma enhanced chemical vapor deposition (PECVD), and pulsed laser deposition (PLD) respectively, were accurately measured. The intensity ratio between photoemission peaks recorded for the films (C 1s, Mo 3d, B 1s) andmore » the substrates (Cu 2p, Al 2p, Si 2p) is the primary input parameter for thickness calculation, in addition to the atomic densities of the substrate and the film, and the corresponding electron attenuation length (EAL). The XPS data was used with a proposed model for thickness calculations, which was verified by cross-sectional transmission electron microscope (TEM) measurement of thickness for all the films. The XPS method determines thickness values averaged over an analysis area which is orders of magnitude larger than the typical area in cross-sectional TEM imaging, hence provides an advanced approach for thickness measurement over large areas of 2D materials. The study confirms that the versatile XPS method allows rapid and reliable assessment of the 2D material thickness and this method can facilitate in tailoring growth conditions for producing very thin 2D materials effectively over a large area. Furthermore, the XPS measurement for a typical 2D material is non-destructive and does not require special sample preparation. Furthermore, after XPS analysis, exactly the same sample can undergo further processing or utilization.« less

Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology.

PubMed

Sharma, Akhil; Verheijen, Marcel A; Wu, Longfei; Karwal, Saurabh; Vandalon, Vincent; Knoops, Harm C M; Sundaram, Ravi S; Hofmann, Jan P; Kessels, W M M Erwin; Bol, Ageeth A

2018-05-10

Low-temperature controllable synthesis of monolayer-to-multilayer thick MoS2 with tuneable morphology is demonstrated by using plasma enhanced atomic layer deposition (PEALD). The characteristic self-limiting ALD growth with a growth-per-cycle of 0.1 nm per cycle and digital thickness control down to a monolayer are observed with excellent wafer scale uniformity. The as-deposited films are found to be polycrystalline in nature showing the signature Raman and photoluminescence signals for the mono-to-few layered regime. Furthermore, a transformation in film morphology from in-plane to out-of-plane orientation of the 2-dimensional layers as a function of growth temperature is observed. An extensive study based on high-resolution transmission electron microscopy is presented to unravel the nucleation mechanism of MoS2 on SiO2/Si substrates at 450 °C. In addition, a model elucidating the film morphology transformation (at 450 °C) is hypothesized. Finally, the out-of-plane oriented films are demonstrated to outperform the in-plane oriented films in the hydrogen evolution reaction for water splitting applications.

Development of a Buried Layer Platform at the OMEGA Laser to Study Open L-Shell Spectra from Coronal (non-LTE) Plasmas

NASA Astrophysics Data System (ADS)

Marley, Edward; Jarrot, Charlie; Schneider, Marilyn; Kemp, Elijah; Foord, Mark; Heeter, Robert; Liedahl, Duane; Widmann, Klause; Mauche, Christopher; Brown, Greg; Emig, James

2017-10-01

A buried layer platform is being developed at the OMEGA laser to study the open L-shell spectra of coronal (non LTE) plasmas (ne few 1021/cm3, Te 0.8-1.2 keV) of mid Z materials. Studies have been done using a 250 μm diameter dot composed of a layer of 1200 Å thick Zn between two 600 Å thick layers of Ti, in the center of a 1000 μm diameter, 13 μm thick beryllium tamper. Lasers heat the target from both sides for up to 3 ns. The size of the microdot vs time was measured with x-ray imaging (face-on and side-on). The radiant x-ray power was measured with a low-resolution absolutely calibrated x-ray spectrometer (DANTE). The temperature was measured from the Ti helium-beta complex. The use of this platform for the verification of atomic models is discussed. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344.

Modeling Electrothermal Plasma with Boundary Layer Effects

NASA Astrophysics Data System (ADS)

AlMousa, Nouf Mousa A.

Electrothermal plasma sources produce high-density (1023-10 28 /m3) and high temperature (1-5 eV) plasmas that are of interest for a variety of applications such as hypervelocity launch devices, fusion reactor pellet injectors, and pulsed thrusters for small satellites. Also, the high heat flux (up to 100 GW/m2) and high pressure (100s MPa) of electrothermal (ET) plasmas allow for the use of such facilities as a source of high heat flux to simulate off-normal events in Tokamak fusion reactors. Off-normal events like disruptions, thermal and current quenches, are the perfect recipes for damage of plasma facing components (PFC). Successful operation of a fusion reactor requires comprehensive understanding of material erosion behavior. The extremely high heat fluxes deposited in PFCs melt and evaporate or directly sublime the exposed surfaces, which results in a thick vapor/melt boundary layer adjacent to the solid wall structure. The accumulating boundary layers provide a self-protecting nature by attenuating the radiant energy transport to the PFCs. The ultimate goal of this study is to develop a reliable tool to adequately simulate the effect of the boundary layers on the formation and flow of the energetic ET plasma and its impact on exposed surfaces erosion under disruption like conditions. This dissertation is a series of published journals/conferences papers. The first paper verified the existence of the vapor shield that evolved at the boundary layer under the typical operational conditions of the NC State University ET plasma facilities PIPE and SIRENS. Upon the verification of the vapor shield, the second paper proposed novel model to simulate the evolution of the boundary layer and its effectiveness in providing a self-protecting nature for the exposed plasma facing surfaces. The developed models simulate the radiant heat flux attenuation through an optically thick boundary layer. The models were validated by comparing the simulation results to experimental data taken from the ET plasma facilities. Upon validation of the boundary layer models, computational experiments were conducted with the purpose of evaluation the PFCs' erosion during plasma disruption in Tokamak fusion reactors. Erosion of a set of selected low-Z and high-Z materials were analyzed and discussed. For metallic plasma facing materials under the impact of hard and long time-scale disruption events, melting and melt-layer splashing become dominate erosion mechanisms during plasma-material interaction. In order to realistically assess the erosion of the metallic fusion reactor components, the fourth paper accounts for the various mechanisms by which material evolved from PFCs due to melting and vaporization, with a developed melting and splattering/splashing model incorporated in the ET plasma code. Also, the shielding effect associated with melt-layer and vapor-layer is investigated. The quantitative results of material erosion with the boundary layer effects including a vapor layer, melt layer and splashing effects is a new model and an important step towards achieving a better understanding of plasma-material interactions under exposure to such high heat flux conditions.

Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO2.

PubMed

Gasvoda, Ryan J; van de Steeg, Alex W; Bhowmick, Ranadeep; Hudson, Eric A; Agarwal, Sumit

2017-09-13

Surface phenomena during atomic layer etching (ALE) of SiO 2 were studied during sequential half-cycles of plasma-assisted fluorocarbon (CF x ) film deposition and Ar plasma activation of the CF x film using in situ surface infrared spectroscopy and ellipsometry. Infrared spectra of the surface after the CF x deposition half-cycle from a C 4 F 8 /Ar plasma show that an atomically thin mixing layer is formed between the deposited CF x layer and the underlying SiO 2 film. Etching during the Ar plasma cycle is activated by Ar + bombardment of the CF x layer, which results in the simultaneous removal of surface CF x and the underlying SiO 2 film. The interfacial mixing layer in ALE is atomically thin due to the low ion energy during CF x deposition, which combined with an ultrathin CF x layer ensures an etch rate of a few monolayers per cycle. In situ ellipsometry shows that for a ∼4 Å thick CF x film, ∼3-4 Å of SiO 2 was etched per cycle. However, during the Ar plasma half-cycle, etching proceeds beyond complete removal of the surface CF x layer as F-containing radicals are slowly released into the plasma from the reactor walls. Buildup of CF x on reactor walls leads to a gradual increase in the etch per cycle.

Properties of chirped mirrors manufactured by plasma ion assisted electron beam evaporation

NASA Astrophysics Data System (ADS)

Bischoff, Martin; Stenzel, Olaf; Gäbler, Dieter; Kaiser, Norbert

2005-09-01

Nowadays, chirped dielectric mirrors for ultrafast optics and laser applications are usually manufactured by sputtering techniques. The suitability of Advanced Plasma Source (APS) assisted electron beam evaporation with respect to such coatings is still under investigation. The purpose of this presentation is to show our first results of the deposition of chirped layers produced by plasma ion assisted electron beam evaporation and of the investigation of their properties. The aim was to design and prepare a NIR-mirror for the spectral range of 700 nm to 900 nm. It has been attempted to find a design that is robust with respect to errors of thickness and refractive index. The mirror consists of more than 26 layers composed of alternating high- (Nb2O5) and low-refractive index (SiO2) material. The deposited coatings were tested in terms of their group delay dispersion (GDD) and their reflectivity. We show, that in the wavelength range between 720 nm and 890 nm the GDD exhibits a value of about -50 fs2, whereas the reflectivity is above 99%. However, the subsequent reverse engineering operations show a relatively large thickness error of more than 1% - 2% regarding the particular layers. Nevertheless the effect on the GDD and the reflectivity is tolerable. Furthermore, we present our first experiments concerning the design and fabrication of a chirped mirror, which allows controlling the third order dispersion (TOD), whereas the relative thickness error of the particular layers should not exceed 1%.

Plasma electrolytic oxidation of Titanium Aluminides

NASA Astrophysics Data System (ADS)

Morgenstern, R.; Sieber, M.; Grund, T.; Lampke, T.; Wielage, B.

2016-03-01

Due to their outstanding specific mechanical and high-temperature properties, titanium aluminides exhibit a high potential for lightweight components exposed to high temperatures. However, their application is limited through their low wear resistance and the increasing high-temperature oxidation starting from about 750 °C. By the use of oxide ceramic coatings, these constraints can be set aside and the possible applications of titanium aluminides can be extended. The plasma electrolytic oxidation (PEO) represents a process for the generation of oxide ceramic conversion coatings with high thickness. The current work aims at the clarification of different electrolyte components’ influences on the oxide layer evolution on alloy TNM-B1 (Ti43.5Al4Nb1Mo0.1B) and the creation of compact and wear resistant coatings. Model experiments were applied using a ramp-wise increase of the anodic potential in order to show the influence of electrolyte components on the discharge initiation and the early stage of the oxide layer growth. The production of PEO layers with technically relevant thicknesses close to 100 μm was conducted in alkaline electrolytes with varying amounts of Na2SiO3·5H2O and K4P2O7 under symmetrically pulsed current conditions. Coating properties were evaluated with regard to morphology, chemical composition, hardness and wear resistance. The addition of phosphates and silicates leads to an increasing substrate passivation and the growth of compact oxide layers with higher thicknesses. Optimal electrolyte compositions for maximum coating hardness and thickness were identified by statistical analysis. Under these conditions, a homogeneous inner layer with low porosity can be achieved. The frictional wear behavior of the compact coating layer is superior to a hard anodized layer on aluminum.

Study of the wear resistance of ion-plasma coatings based on titanium and aluminum and obtained by magnetron sputtering

NASA Astrophysics Data System (ADS)

Kachalin, G. V.; Mednikov, A. F.; Tkhabisimov, A. B.; Sidorov, S. V.

2017-05-01

The paper presents the results of metallographic researches and erosion tests of ion-plasma coatings (based on titanium, aluminum and their nitrides), which were formed on samples of 12Kh13 and EI961 blade steels. Erosion tests and studies of characteristics of obtained by magnetron sputtering coatings were carried out by using a set of research equipment UNU “Erosion-M” NRU “MPEI”. It was found that the formed Ti/Al-TiN/AlN coatings increase the duration of blade steels erosion wear incubation period by at least in 1.5 times and have a layered structure with thicknesses of nitride layers 1.3-1.6 μm and intermediate metallic layers 0.3-0.5 μm, with a total thickness of coatings of 10-14 μm for 12Kh13steel samples and 19-21 μm for EI961 steel samples.

Structure of a bimetallic strip produced by plasma spraying of a TiAl powder on a niobium sheet

NASA Astrophysics Data System (ADS)

Povarova, K. B.; Antonova, A. V.; Burmistrov, V. I.; Safronov, B. V.; Perfilov, L. S.; Chukanov, A. P.

2007-10-01

Ti-48 at % Al alloy granules produced by centrifugal spraying are milled into a powder with a particle size of 40 100 μm, and are applied onto a niobium foil using plasma spraying in an argon atmosphere. The fabricated TiAl/Nb bimetallic strip consists of a 100-μm-thick niobium layer and a porous 300-to 400-μm-thick TiAl layer formed by flattened particles. Directly after the preparation of the bimetallic strip, the surface of the TiAl porous layer is rough. Vacuum annealing at 1000, 1100, and 1200°C for 0.5 1.5 h leads to intense pore healing. After deposition and annealing, the interlayer adhesion is strong. The preparation of TiAl granules and spraying of the powder is accompanied by aluminum depletion of the Ti-48 at % Al alloy to 42 45 at % and an increase in the fraction of the α2-Ti3Al phase in the deposited layer. The prepared material has a duplex structure. An intermediate diffuse layer characterized by a variable composition and thickness is formed at the interface. This layer consists of two solid solutions; one of them, which is formed at the TiAl layer, is an α2-Ti3Al-based solid solution of niobium and the other, which is formed at the niobium foil, is a niobium-based solid solution of titanium and aluminum.

Plasma Spray-Physical Vapor Deposition (PS-PVD) of Ceramics for Protective Coatings

NASA Technical Reports Server (NTRS)

Harder, Bryan J.; Zhu, Dongming

2011-01-01

In order to generate advanced multilayer thermal and environmental protection systems, a new deposition process is needed to bridge the gap between conventional plasma spray, which produces relatively thick coatings on the order of 125-250 microns, and conventional vapor phase processes such as electron beam physical vapor deposition (EB-PVD) which are limited by relatively slow deposition rates, high investment costs, and coating material vapor pressure requirements. The use of Plasma Spray - Physical Vapor Deposition (PS-PVD) processing fills this gap and allows thin (< 10 microns) single layers to be deposited and multilayer coatings of less than 100 microns to be generated with the flexibility to tailor microstructures by changing processing conditions. Coatings of yttria-stabilized zirconia (YSZ) were applied to NiCrAlY bond coated superalloy substrates using the PS-PVD coater at NASA Glenn Research Center. A design-of-experiments was used to examine the effects of process variables (Ar/He plasma gas ratio, the total plasma gas flow, and the torch current) on chamber pressure and torch power. Coating thickness, phase and microstructure were evaluated for each set of deposition conditions. Low chamber pressures and high power were shown to increase coating thickness and create columnar-like structures. Likewise, high chamber pressures and low power had lower growth rates, but resulted in flatter, more homogeneous layers

Optical and electrical characterization methods of plasma-induced damage in silicon nitride films

NASA Astrophysics Data System (ADS)

Kuyama, Tomohiro; Eriguchi, Koji

2018-06-01

We proposed evaluation methods of plasma-induced damage (PID) in silicon nitride (SiN) films. The formation of an oxide layer by air exposure was identified for damaged SiN films by X-ray photoelectron spectroscopy (XPS). Bruggeman’s effective medium approximation was employed for an optical model consisting of damaged and undamaged layers, which is applicable to an in-line monitoring by spectroscopic ellipsometry (SE). The optical thickness of the damaged layer — an oxidized layer — extended after plasma exposure, which was consistent with the results obtained by a diluted hydrofluoric acid (DHF) wet etching. The change in the conduction band edge of the damaged SiN films was presumed from two electrical techniques, i.e., current–voltage (I–V) measurement and time-dependent dielectric breakdown (TDDB) test with a constant voltage stress. The proposed techniques can be used for assigning the plasma-induced structural change in an SiN film widely used as an etch-protecting layer.

Effects of plasma pretreatment on the process of self-forming Cu-Mn alloy barriers for Cu interconnects

NASA Astrophysics Data System (ADS)

Park, Jae-Hyung; Han, Dong-Suk; Kim, Kyoung-Deok; Park, Jong-Wan

2018-02-01

This study investigated the effect of plasma pretreatment on the process of a self-forming Cu-Mn alloy barrier on porous low-k dielectrics. To study the effects of plasma on the performance of a self-formed Mn-based barrier, low-k dielectrics were pretreated with H2 plasma or NH3 plasma. Cu-Mn alloy materials on low-k substrates that were subject to pretreatment with H2 plasma exhibited lower electrical resistivity values and the formation of thicker Mn-based interlayers than those on low-k substrates that were subject to pretreatment with NH3 plasma. Transmission electron microscopy (TEM), X-ray photoemission spectroscopy (XPS), and thermal stability analyses demonstrated the exceptional performance of the Mn-based interlayer on plasma-pretreated low-k substrates with regard to thickness, chemical composition, and reliability. Plasma treating with H2 gas formed hydrophilic Si-OH bonds on the surface of the low-k layer, resulting in Mn-based interlayers with greater thickness after annealing. However, additional moisture uptake was induced on the surface of the low-k dielectric, degrading electrical reliability. By contrast, plasma treating with NH3 gas was less effective with regard to forming a Mn-based interlayer, but produced a Si-N/C-N layer on the low-k surface, yielding improved barrier characteristics.

Phosphor-Doped Thermal Barrier Coatings Deposited by Air Plasma Spray for In-Depth Temperature Sensing

PubMed Central

Peng, Di; Yang, Lixia; Cai, Tao; Liu, Yingzheng; Zhao, Xiaofeng; Yao, Zhiqi

2016-01-01

Yttria-stabilized zirconia (YSZ)-based thermal barrier coating (TBC) has been integrated with thermographic phosphors through air plasma spray (APS) for in-depth; non-contact temperature sensing. This coating consisted of a thin layer of Dy-doped YSZ (about 40 µm) on the bottom and a regular YSZ layer with a thickness up to 300 µm on top. A measurement system has been established; which included a portable; low-cost diode laser (405 nm); a photo-multiplier tube (PMT) and the related optics. Coating samples with different topcoat thickness were calibrated in a high-temperature furnace from room temperature to around 900 °C. The results convincingly showed that the current sensor and the measurement system was capable of in-depth temperature sensing over 800 °C with a YSZ top layer up to 300 µm. The topcoat thickness was found to have a strong effect on the luminescent signal level. Therefore; the measurement accuracy at high temperatures was reduced for samples with thick topcoats due to strong light attenuation. However; it seemed that the light transmissivity of YSZ topcoat increased with temperature; which would improve the sensor’s performance at high temperatures. The current sensor and the measurement technology have shown great potential in on-line monitoring of TBC interface temperature. PMID:27690037

Metal surface nitriding by laser induced plasma

NASA Astrophysics Data System (ADS)

Thomann, A. L.; Boulmer-Leborgne, C.; Andreazza-Vignolle, C.; Andreazza, P.; Hermann, J.; Blondiaux, G.

1996-10-01

We study a nitriding technique of metals by means of laser induced plasma. The synthesized layers are composed of a nitrogen concentration gradient over several μm depth, and are expected to be useful for tribological applications with no adhesion problem. The nitriding method is tested on the synthesis of titanium nitride which is a well-known compound, obtained at present by many deposition and diffusion techniques. In the method of interest, a laser beam is focused on a titanium target in a nitrogen atmosphere, leading to the creation of a plasma over the metal surface. In order to understand the layer formation, it is necessary to characterize the plasma as well as the surface that it has been in contact with. Progressive nitrogen incorporation in the titanium lattice and TiN synthesis are studied by characterizing samples prepared with increasing laser shot number (100-4000). The role of the laser wavelength is also inspected by comparing layers obtained with two kinds of pulsed lasers: a transversal-excited-atmospheric-pressure-CO2 laser (λ=10.6 μm) and a XeCl excimer laser (λ=308 nm). Simulations of the target temperature rise under laser irradiation are performed, which evidence differences in the initial laser/material interaction (material heated thickness, heating time duration, etc.) depending on the laser features (wavelength and pulse time duration). Results from plasma characterization also point out that the plasma composition and propagation mode depend on the laser wavelength. Correlation of these results with those obtained from layer analyses shows at first the important role played by the plasma in the nitrogen incorporation. Its presence is necessary and allows N2 dissociation and a better energy coupling with the target. Second, it appears that the nitrogen diffusion governs the nitriding process. The study of the metal nitriding efficiency, depending on the laser used, allows us to explain the differences observed in the layer features as purity, thickness, and surface morphology.

Electrodeposition of thin yttria-stabilized zirconia layers using glow-discharge plasma

NASA Astrophysics Data System (ADS)

Ogumi, Zempachi; Uchimoto, Yoshiharu; Tsuji, Yoichiro; Takehara, Zen-ichiro

1992-08-01

A novel process for preparation of thin yttria-stabilized zirconia (YSZ) layers was developed. This process differs from other vapor-phase deposition methods in that a dc bias circuit, separate from the plasma-generation circuit, is used for the electrodeposition process. The YSZ layer was electrodeposited from ZrCl4 and YCl3 on a nonporous calcia-stabilized zirconia substrate. Scanning electron microscopy, electron probe microanalysis, electron spectroscopy for chemical analysis, and x-ray-diffraction measurements confirmed the electrodeposition of a smooth, pinhole-free yttria-stabilized zirconia film of about 3 μm thickness.

Contact discontinuities in a cold collision-free two-beam plasma

NASA Technical Reports Server (NTRS)

Kirkland, K. B.; Sonnerup, B. U. O.

1982-01-01

The structure of contact discontinuities in a collision-free plasma is examined using a model of a plasma which consists of two oppositely directed cold ion beams and a background of cold massless electrons such that exact charge neutrality is maintained and that the electric field is zero. The basic equations describing self-consistent equilibria are obtained for the more general situation where a net flow across the layer takes place and where the magnetic field has two nonzero tangential components but where the electric field remains zero. These equations are then specialized to the case of no net plasma flow where one of the tangential components is zero, and four different classes of sheets are obtained, all having thickness the order of the ion inertial length. The first class is for layers separating two identical plasma and magnetic field regions, the second is for an infinite array of parallel layers producing an undulated magnetic field, the third is for layers containing trapped ions in closed orbits which separate two vacuum regions with uniform identical magnetic fields, and the fourth is for layers which reflect a single plasma beam, leaving a vacuum with a reversed and compressed tangential field on the other side.

Control of unsteadiness of a shock wave/turbulent boundary layer interaction by using a pulsed-plasma-jet actuator

NASA Astrophysics Data System (ADS)

Narayanaswamy, Venkateswaran; Raja, Laxminarayan L.; Clemens, Noel T.

2012-07-01

A pulsed-plasma jet actuator is used to control the unsteady motion of the separation shock of a shock wave/boundary layer interaction formed by a compression ramp in a Mach 3 flow. The actuator is based on a plasma-generated synthetic jet and is configured as an array of three jets that can be injected normal to the cross-flow, pitched, or pitched and skewed. The typical peak jet exit velocity of the actuators is about 300 m/s and the pulsing frequencies are a few kilohertz. A study of the interaction between the pulsed-plasma jets and the shock/boundary layer interaction was performed in a time-resolved manner using 10 kHz schlieren imaging. When the actuator, pulsed at StL ≈ 0.04 (f = 2 kHz), was injected into the upstream boundary layer, the separation shock responded to the plasma jet by executing a rapid upstream motion followed by a gradual downstream recovery motion. Schlieren movies of the interaction showed that the separation shock unsteadiness was locked to the pulsing frequency of the actuator, with amplitude of about one boundary layer thickness. Wall-pressure measurements made under the intermittent region showed about a 30% decrease in the overall magnitude of the pressure fluctuations in the low-frequency band associated with unsteady large-scale motion of the separated flow. Furthermore, by increasing the pulsing frequency to 3.3 kHz, the amplitude of the separation shock oscillation was reduced to less than half the boundary layer thickness. Investigation into the effect of the actuator location on the shock wave/boundary layer interaction (SWBLI) showed qualitatively and quantitatively that the actuator placed upstream of the separation shock caused significant modification to the SWBLI unsteadiness, whereas injection from inside the separation bubble did not cause a noticeable effect.

Surface characterization and corrosion behavior of calcium phosphate-base composite layer on titanium and its alloys via plasma electrolytic oxidation: A review paper.

PubMed

Rafieerad, A R; Ashra, M R; Mahmoodian, R; Bushroa, A R

2015-12-01

In recent years, calcium phosphate-base composites, such as hydroxyapatite (HA) and carbonate apatite (CA) have been considered desirable and biocompatible coating layers in clinical and biomedical applications such as implants because of the high resistance of the composites. This review focuses on the effects of voltage, time and electrolytes on a calcium phosphate-base composite layer in case of pure titanium and other biomedical grade titanium alloys via the plasma electrolytic oxidation (PEO) method. Remarkably, these parameters changed the structure, morphology, pH, thickness and crystallinity of the obtained coating for various engineering and biomedical applications. Hence, the structured layer caused improvement of the biocompatibility, corrosion resistance and assignment of extra benefits for Osseo integration. The fabricated layer with a thickness range of 10 to 20 μm was evaluated for physical, chemical, mechanical and tribological characteristics via XRD, FESEM, EDS, EIS and corrosion analysis respectively, to determine the effects of the applied parameters and various electrolytes on morphology and phase transition. Moreover, it was observed that during PEO, the concentration of calcium, phosphor and titanium shifts upward, which leads to an enhanced bioactivity by altering the thickness. The results confirm that the crystallinity, thickness and contents of composite layer can be changed by applying thermal treatments. The corrosion behavior was investigated via the potentiodynamic polarization test in a body-simulated environment. Here, the optimum corrosion resistance was obtained for the coating process condition at 500 V for 15 min in Ringer solution. This review has been summarized, aiming at the further development of PEO by producing more adequate titanium-base implants along with desired mechanical and biomedical features. Copyright © 2015 Elsevier B.V. All rights reserved.

Zr/ZrC modified layer formed on AISI 440B stainless steel by plasma Zr-alloying

NASA Astrophysics Data System (ADS)

Shen, H. H.; Liu, L.; Liu, X. Z.; Guo, Q.; Meng, T. X.; Wang, Z. X.; Yang, H. J.; Liu, X. P.

2016-12-01

The surface Zr/ZrC gradient alloying layer was prepared by double glow plasma surface alloying technique to increase the surface hardness and wear resistance of AISI 440B stainless steel. The microstructure of the Zr/ZrC alloying layer formed at different alloying temperatures and times as well as its formation mechanism were discussed by using scanning electron microscopy, glow discharge optical emission spectrum, X-ray diffraction and X-ray photoelectron spectroscopy. The adhesive strength, hardness and tribological property of the Zr/ZrC alloying layer were also evaluated in the paper. The alloying surface consists of the Zr-top layer and ZrC-subsurface layer which adheres strongly to the AISI 440B steel substrate. The thickness of the Zr/ZrC alloying layer increases gradually from 16 μm to 23 μm with alloying temperature elevated from 900 °C to 1000 °C. With alloying time from 0.5 h to 4 h, the alloyed depth increases from 3 μm to 30 μm, and the ZrC-rich alloyed thickness vs time is basically parabola at temperature of 1000 °C. Both the hardness and wear resistance of the Zr/ZrC alloying layer obviously increase compared with untreated AISI 440B steel.

CONTROLLED NUCLEAR FUSION REACTOR

DOEpatents

Tuck, J.L.; Kruskal, M.; Colgate, S.A.; Rosenbluth, M.N.

1962-01-01

A plasma generating and heating device is described which comprises a ceramic torus with exterior layers of a thick metal membrane and a metallic coil. In operation, the coil generates a B/sub z/ field prior to the formation of an enclosing plasma sheath. Diffusion of the trapped magnetic field outward through the plasma sheath causes enhanced heating, particularly after the sheath has been pinched. (D.L.C.)

Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Van Bui, Hao, E-mail: H.VanBui@utwente.nl; Wiggers, Frank B.; Gupta, Anubha

2015-01-01

The authors have studied and compared the initial growth and properties of AlN films deposited on Si(111) by thermal and plasma-enhanced atomic layer deposition (ALD) using trimethylaluminum and either ammonia or a N{sub 2}-H{sub 2} mixture as precursors. In-situ spectroscopic ellipsometry was employed to monitor the growth and measure the refractive index of the films during the deposition. The authors found that an incubation stage only occurred for thermal ALD. The linear growth for plasma-enhanced ALD (PEALD) started instantly from the beginning due to the higher nuclei density provided by the presence of plasma. The authors observed the evolution ofmore » the refractive index of AlN during the growth, which showed a rapid increase up to a thickness of about 30 nm followed by a saturation. Below this thickness, higher refractive index values were obtained for AlN films grown by PEALD, whereas above that the refractive index was slightly higher for thermal ALD films. X-ray diffraction characterization showed a wurtzite crystalline structure with a (101{sup ¯}0) preferential orientation obtained for all the layers with a slightly better crystallinity for films grown by PEALD.« less

Two-dimensional potential double layers and discrete auroras

NASA Technical Reports Server (NTRS)

Kan, J. R.; Lee, L. C.; Akasofu, S.-I.

1979-01-01

This paper is concerned with the formation of the acceleration region for electrons which produce the visible auroral arc and with the formation of the inverted V precipitation region. The former is embedded in the latter, and both are associated with field-aligned current sheets carried by plasma sheet electrons. It is shown that an electron current sheet driven from the plasma sheet into the ionosphere leads to the formation of a two-dimensional potential double layer. For a current sheet of a thickness less than the proton gyrodiameter solutions are obtained in which the field-aligned potential drop is distributed over a length much greater than the Debye length. For a current sheet of a thickness much greater than the proton gyrodiameter solutions are obtained in which the potential drop is confined to a distance on the order of the Debye length. The electric field in the two-dimensional double-layer model is the zeroth-order field inherent to the current sheet configuration, in contrast to those models in which the electric field is attributed to the first-order field due to current instabilities or turbulences. The maximum potential in the two-dimensional double-layer models is on the order of the thermal energy of plasma sheet protons, which ranges from 1 to 10 keV.

Hafnium nitride buffer layers for growth of GaN on silicon

DOEpatents

Armitage, Robert D.; Weber, Eicke R.

2005-08-16

Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

Plasma-induced damage of tungsten coatings on graphite limiters

NASA Astrophysics Data System (ADS)

Fortuna, E.; Rubel, M. J.; Psoda, M.; Andrzejczuk, M.; Kurzydowski, K. J.; Miskiewicz, M.; Philipps, V.; Pospieszczyk, A.; Sergienko, G.; Spychalski, M.; Zielinski, W.

2007-03-01

Vaccum plasma sprayed tungsten coatings with an evaporated sandwich Re-W interlayer on graphite limiter blocks were studied after the experimental campaign in the TEXTOR tokamak. The coating morphology was modified by high-heat loads and co-deposition of species from the plasma. Co-deposits contained fuel species, carbon, boron and silicon. X-ray diffractometer phase analysis indicated the coexistence of metallic tungsten and its carbides (WC and W2C) and boride (W2B). In the Re-W layer the presence of carbon was detected in a several micrometres thick zone. In the overheated part of the limiter, the Re-W layer was transformed into a sigma phase.

Control of electromagnetic edge effects in electrically-small rectangular plasma reactors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trampel, Christopher P.; Stieler, Daniel S.; PowerFilm, Inc., 2337 230th Street, Ames, Iowa 50014

Electromagnetic fields supported by rectangular reactors for plasma enhanced chemical vapor deposition are studied theoretically. Expressions for the fields in an electrically-small rectangular reactor with plasma in the chamber are derived. Modal field decompositions are employed under the homogeneous plasma slab approximation. The amplitude of each mode is determined analytically. It is shown that the field can be represented by the standing wave, evanescent waves tied to the edges, and an evanescent wave tied to the corners of the reactor. The impact of boundary conditions at the plasma edge on nonuniformity is quantified. Uniformity may be improved by placing amore » lossy magnetic layer on the reactor sidewalls. It is demonstrated that nonuniformity is a decreasing function of layer thickness.« less

Observation of the magnetospheric ``sash'' and its implications relative to solar-wind/magnetospheric coupling: A multisatellite event analysis

NASA Astrophysics Data System (ADS)

Maynard, N. C.; Savin, S.; Erickson, G. M.; Kawano, H.; Němeček, Z.; Peterson, W. K.; Šafránoková, J.; Sandahl, I.; Scudder, J. D.; Siscoe, G. L.; Sonnerup, B. U. Ö.; Weimer, D. R.; White, W. W.; Wilson, G. R.

2001-04-01

Using a unique data set from the Wind, Polar, Interball 1, Magion 4, and Defense Meteorological Satellite Program (DMSP) F11 satellites, comparisons with the Integrated Space Weather Model (ISM) have provided validation of the global structure predicted by the ISM model, which in turn has allowed us to use the model to interpret the data to further understand boundary layers and magnetospheric processes. The comparisons have shown that the magnetospheric ``sash'' [White et al., 1998], a region of low magnetic field discovered by the MHD modeling which extends along the high-latitude flank of the magnetopause, is related to the turbulent boundary layer on the high-latitude magnetopause, recently mapped by Interball 1. The sash in the data and in the model has rotational discontinuity properties, expected for a reconnection site. At some point near or behind the terminator, the sash becomes a site for reconnection of open field lines, which were previously opened by merging on the dayside. This indicates that significant reconnection in the magnetotail occurs on the flanks. Polar mapped to the high-density extension of the sash into the tilted plasma sheet. The source of the magnetosheath plasma observed by Polar on closed field lines behind the terminator was plasma entry through the low field connection of the sash to the central plasma sheet. The Polar magnetic field line footprints in each hemisphere are moving in different directions. Above and below the tilted plasma sheet the flows in the model are consistent with the corresponding flows in the ionosphere. The turbulence in the plasma sheet allows the convection patterns from each hemisphere to adjust. The boundary layer in the equatorial plane on the flank for this interplanetary magnetic field BY condition, which is below the tilted central plasma sheet, is several RE thick and is on tailward flowing open field lines. This thick boundary layer shields the magnetopause from viscous forces and must be driven by magnetic tension. Above the plasma sheet the boundary layer is dominated by the sash, and the model indicates that the open region inside the sash is considerably thinner.

Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Demaurex, Bénédicte, E-mail: benedicte.demaurex@epfl.ch; Bartlome, Richard; Seif, Johannes P.

2014-08-07

Low-temperature (≤200 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-enhanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only frommore » the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.« less

Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

DOE PAGES

Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; ...

2014-08-05

Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems notmore » only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.« less

The low coherence Fabry-Pérot interferometer with diamond and ZnO layers

NASA Astrophysics Data System (ADS)

Majchrowicz, D.; Den, W.; Hirsch, M.

2016-09-01

The authors present a fiber-optic Fabry-Pérot interferometer built with the application of diamond and zinc oxide (ZnO) thin layers. Thin ZnO films were deposited on the tip of a standard telecommunication single-mode optical fiber (SMF- 28) while the diamond layer was grown on the plate of silicon substrate. Investigated ZnO layers were fabricated by atomic layer deposition (ALD) and the diamond films were deposited using Microwave Plasma Enhanced Chemical Vapor Deposition (μPE CVD) system. Different thickness of layers was examined. The measurements were performed for the fiber-optic Fabry-Pérot interferometer working in the reflective mode. Spectra were registered for various thicknesses of ZnO layer and various length of the air cavity. As a light source, two superluminescent diodes (SLD) with central wavelength of 1300 nm and 1550 nm were used in measurement set-up.

Layer Control of WSe2 via Selective Surface Layer Oxidation.

PubMed

Li, Zhen; Yang, Sisi; Dhall, Rohan; Kosmowska, Ewa; Shi, Haotian; Chatzakis, Ioannis; Cronin, Stephen B

2016-07-26

We report Raman and photoluminescence spectra of mono- and few-layer WSe2 and MoSe2 taken before and after exposure to a remote oxygen plasma. For bilayer and trilayer WSe2, we observe an increase in the photoluminescence intensity and a blue shift of the photoluminescence peak positions after oxygen plasma treatment. The photoluminescence spectra of trilayer WSe2 exhibit features of a bilayer after oxygen plasma treatment. Bilayer WSe2 exhibits features of a monolayer, and the photoluminescence of monolayer WSe2 is completely absent after the oxygen plasma treatment. These changes are observed consistently in more than 20 flakes. The mechanism of the changes observed in the photoluminescence spectra of WSe2 is due to the selective oxidation of the topmost layer. As a result, N-layer WSe2 is reduced to N-1 layers. Raman spectra and AFM images taken from the WSe2 flakes before and after the oxygen treatment corroborate these findings. Because of the low kinetic energy of the oxygen radicals in the remote oxygen plasma, the oxidation is self-limiting. By varying the process duration from 1 to 10 min, we confirmed that the oxidation will only affect the topmost layer of the WSe2 flakes. X-ray photoelectron spectroscopy shows that the surface layer WOx of the sample can be removed by a quick dip in KOH solution. Therefore, this technique provides a promising way of controlling the thickness of WSe2 layer by layer.

Deposition of gold nano-particles and nano-layers on polyethylene modified by plasma discharge and chemical treatment

NASA Astrophysics Data System (ADS)

Švorčík, V.; Chaloupka, A.; Záruba, K.; Král, V.; Bláhová, O.; Macková, A.; Hnatowicz, V.

2009-08-01

Polyethylene (PE) was treated in Ar plasma discharge and then grafted from methanol solution of 1,2-ethanedithiol to enhance adhesion of gold nano-particles or sputtered gold layers. The modified PE samples were either immersed into freshly prepared colloid solution of Au nano-particles or covered by sputtered, 50 nm thick gold nano-layer. Properties of the plasma modified, dithiol grafted and gold coated PE were studied using XPS, UV-VIS, AFM, EPR, RBS methods and nanoindentation. It was shown that the plasma treatment results in degradation of polymer chain, creation of excessive free radicals and conjugated double bonds. After grafting with 1,2-ethanedithiol the concentration of free radicals declined but the concentration of double bonds remained unchanged. Plasma treatment changes PE surface morphology and increases surface roughness too. Another significant change in the surface morphology and roughness was observed after deposition of Au nano-particles. The presence of Au on the sample surface after the coating with Au nano-particles was proved by XPS and RBS methods. Nanoindentation measurements shown that the grafting of plasma activated PE surface with dithiol increases significantly adhesion of sputtered Au nano-layer.

Deployment of titanium thermal barrier for low-temperature carbon nanotube growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, G.Y.; Poa, C.H.P.; Henley, S.J.

2005-12-19

Chemical vapor-synthesized carbon nanotubes are typically grown at temperatures around 600 deg. C. We report on the deployment of a titanium layer to help elevate the constraints on the substrate temperature during plasma-assisted growth. The growth is possible through the lowering of the hydrocarbon content used in the deposition, with the only source of heat provided by the plasma. The nanotubes synthesized have a small diameter distribution, which deviates from the usual trend that the diameter is determined by the thickness of the catalyst film. Simple thermodynamic simulations also show that the quantity of heat, that can be distributed, ismore » determined by the thickness of the titanium layer. Despite the lower synthesis temperature, it is shown that this technique allows for high growth rates as well as better quality nanotubes.« less

Plasma spraying method for forming diamond and diamond-like coatings

DOEpatents

Holcombe, C.E.; Seals, R.D.; Price, R.E.

1997-06-03

A method and composition is disclosed for the deposition of a thick layer of diamond or diamond-like material. The method includes high temperature processing wherein a selected composition including at least glassy carbon is heated in a direct current plasma arc device to a selected temperature above the softening point, in an inert atmosphere, and is propelled to quickly quenched on a selected substrate. The softened or molten composition crystallizes on the substrate to form a thick deposition layer comprising at least a diamond or diamond-like material. The selected composition includes at least glassy carbon as a primary constituent and may include at least one secondary constituent. Preferably, the secondary constituents are selected from the group consisting of at least diamond powder, boron carbide (B{sub 4}C) powder and mixtures thereof. 9 figs.

Ultra-Shallow Depth Profiling of Arsenic Implants in Silicon by Hydride Generation-Inductively Coupled Plasma Atomic Emission Spectrometry

NASA Astrophysics Data System (ADS)

Matsubara, Atsuko; Kojima, Hisao; Itoga, Toshihiko; Kanehori, Keiichi

1995-08-01

High resolution depth profiling of arsenic (As) implanted into silicon wafers by a chemical technique is described. Silicon wafers are precisely etched through repeated oxidation by hydrogen peroxide solution and dissolution of the oxide by hydrofluoric acid solution. The etched silicon thickness is determined by inductively-coupled plasma atomic emission spectrometry (ICP-AES). Arsenic concentration is determined by hydride generation ICP-AES (HG-ICP-AES) with prereduction using potassium iodide. The detection limit of As in a 4-inch silicon wafer is 2.4×1018 atoms/cm3. The etched silicon thickness is controlled to less than 4±2 atomic layers. Depth profiling of an ultra-shallow As diffusion layer with the proposed method shows good agreement with profiling using the four-probe method or secondary ion mass spectrometry.

Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications

NASA Astrophysics Data System (ADS)

Choi, Kyeong-Keun; Park, Chan-Gyung; Kim, Deok-kee

2016-01-01

The electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition were investigated for through-silicon via (TSV) and metal-insulator-metal applications at temperatures below 300 °C. ZrO2 films were able to be conformally deposited on the scallops of 50-µm-diameter, 100-µm-deep TSV holes. The mean breakdown field of 30-nm-thick ZrO2 films on 30-nm-thick Ta(N) increased about 41% (from 2.7 to 3.8 MV/cm) upon H2 plasma treatment. With the plasma treatment, the breakdown field of the film increased and the temperature coefficient of capacitance decreased significantly, probably as a result of the decreased carbon concentration in the film.

The effect of surface nanocrystallization on plasma nitriding behaviour of AISI 4140 steel

NASA Astrophysics Data System (ADS)

Li, Yang; Wang, Liang; Zhang, Dandan; Shen, Lie

2010-11-01

A plastic deformation surface layer with nanocrystalline grains was produced on AISI 4140 steel by means of surface mechanical attrition treatment (SMAT). Plasma nitriding of SMAT and un-SMAT AISI 4140 steel was carried out by a low-frequency pulse excited plasma unit. A series of nitriding experiments has been conducted at temperatures ranging from 380 to 500 °C for 8 h in an NH 3 gas. The samples were characterized using X-ray diffraction, scanning electron microscopy, optical microscopy and Vickers microhardness tester. The results showed that a much thicker compound layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples after nitriding at the low temperature. In particular, plasma nitriding SMAT AISI 4140 steel at 380 °C for 8 h can produced a compound layer of 2.5 μm thickness with very high hardness on the surface, which is similar to un-SMAT samples were plasma nitrided at approximately 430 °C within the same time.

ISEE-1 and 2 observations of field-aligned currents in the distant midnight magnetosphere

NASA Technical Reports Server (NTRS)

Elphic, R. C.; Kelly, T. J.; Russell, C. T.

1985-01-01

Magnetic field measurements obtained in the nightside magnetosphere by the co-orbiting ISEE-1 and 2 spacecraft have been examined for signatures of field-aligned currents (FAC). Such currents are found on the boundary of the plasma sheet both when the plasma sheet is expanding and when it is thinning. Evidence is often found for the existence of waves on the plasma sheet boundary, leading to multiple crossings of the FAC sheet. At times the boundary layer FAC sheet orientation is nearly parallel to the X-Z GSM plane, suggesting 'protrusions' of plasma sheet into the lobes. The boundary layer current polarity is, as expected, into the ionosphere in the midnight to dawn local time sector, and outward near dusk. Current sheet thicknesses and velocities are essentially independent of plasma sheet expansion or thinning, having typical values of 1500 km and 20-40 km/s respectively. Characteristic boundary layer current densities are about 10 nanoamps per square meter.

Wear behavior of AISI 1090 steel modified by pulse plasma technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ayday, Aysun; Durman, Mehmet

2012-09-06

AISI 1090 steel was pulse plasma treated (PPT) using a Molybdenum electrode. Two different pulse numbers were chosen to obtain modified layers of 20{+-}5 {mu}m thickness. The dry sliding wear studies performed on this steel with and without PPT against an alumina ball counterpart showed that the PPT improved the wear resistance. The pulse number of the PPT modified layer was found to be highly influential in imparting the wear resistance to this steel, due to enhancement of surface hardness depending on treatment time.

Antimicrobial nano-silver non-woven polyethylene terephthalate fabric via an atmospheric pressure plasma deposition process

PubMed Central

Deng, Xiaolong; Yu Nikiforov, Anton; Coenye, Tom; Cools, Pieter; Aziz, Gaelle; Morent, Rino; De Geyter, Nathalie; Leys, Christophe

2015-01-01

An antimicrobial nano-silver non-woven polyethylene terephthalate (PET) fabric has been prepared in a three step process. The fabrics were first pretreated by depositing a layer of organosilicon thin film using an atmospheric pressure plasma system, then silver nano-particles (AgNPs) were incorporated into the fabrics by a dipping-dry process, and finally the nano-particles were covered by a second organosilicon layer of 10-50 nm, which acts as a barrier layer. Different surface characterization techniques like SEM and XPS have been implemented to study the morphology and the chemical composition of the nano-silver fabrics. Based on these techniques, a uniform immobilization of AgNPs in the PET matrix has been observed. The antimicrobial activity of the treated fabrics has also been tested using P. aeruginosa, S. aureus and C. albicans. It reveals that the thickness of the barrier layer has a strong effect on the bacterial reduction of the fabrics. The durability and stability of the AgNPs on the fabrics has also been investigated in a washing process. By doing so, it is confirmed that the barrier layer can effectively prevent the release of AgNPs and that the thickness of the barrier layer is an important parameter to control the silver ions release. PMID:25951432

Development of Plasma-Sprayed Molybdenum Carbide-Based Anode Layers with Various Metal Oxides for SOFC

NASA Astrophysics Data System (ADS)

Faisal, N. H.; Ahmed, R.; Katikaneni, S. P.; Souentie, S.; Goosen, M. F. A.

2015-12-01

Air plasma-sprayed (APS) coatings provide an ability to deposit a range of novel fuel cell materials at competitive costs. This work develops three separate types of composite anodes (Mo-Mo2C/Al2O3, Mo-Mo2C/ZrO2, Mo-Mo2C/TiO2) using a combination of APS process parameters on Hastelloy®X for application in intermediate temperature proton-conducting solid oxide fuel cells. Commercially available carbide of molybdenum powder catalyst (Mo-Mo2C) and three metal oxides (Al2O3, ZrO2, TiO2) was used to prepare three separate composite feedstock powders to fabricate three different anodes. Each of the modified composition anode feedstock powders included a stoichiometric weight ratio of 0.8:0.2. The coatings were characterized by scanning electron microscopy, energy dispersive spectroscopy, x-ray diffraction, nanoindentation, and conductivity. We report herein that three optimized anode layers of thicknesses between 200 and 300 µm and porosity as high as 20% for Mo-Mo2C/Al2O3 (250-µm thick) and Mo-Mo2C/TiO2 (300 µm thick) and 17% for Mo-Mo2C/ZrO2 (220-µm thick), controllable by a selection of the APS process parameters with no addition of sacrificial pore-forming material. The nanohardness results indicate the upper layers of the coatings have higher values than the subsurface layers in coatings with some effect of the deposition on the substrate. Mo-Mo2C/ZrO2 shows high electrical conductivity.

Microstructure and properties of 17-4PH steel plasma nitrocarburized with a carrier gas containing rare earth elements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, R.L., E-mail: ruiliangliu@126.com; Yan, M.F., E-mail: yanmufu@hit.edu.cn; Wu, Y.Q.

2010-01-15

The effect of rare earth addition in the carrier gas on plasma nitrocarburizing of 17-4PH steel was studied. The microstructure and crystallographically of the phases in the surface layer as well as surface morphology of the nitrocarburized specimens were characterized by optical microscope, X-ray diffraction and scanning tunneling microscope, respectively. The hardness of the surface layer was measured by using a Vickers hardness test. The results show that the incorporation of rare earth elements in the carrier gas can increase the nitrocarburized layer thickness up to 55%, change the phase proportion in the nitrocarburized layer, refine the nitrides in surfacemore » layer, and increase the layer hardness above 100HV. The higher surface hardening effect after rare earth addition is caused by improvement in microstructure and change in the phase proportion of the nitrocarburized layer.« less

Deuterium retention and release behaviours of tungsten and deuterium co-deposited layers

NASA Astrophysics Data System (ADS)

Qiao, L.; Zhang, H. W.; Xu, J.; Chai, L. Q.; Hu, M.; Wang, P.

2018-04-01

Tungsten (W) layer deposited in argon and deuterium atmosphere by magnetron sputtering was used as a model system to study the deuterium (D) retention and release behavior in co-deposited W layer. After deposition several selected samples were exposed in deuterium plasma at 370 K with a flux of 4.0 × 1021 D/(m2 s) up to a fluence of 1.1 × 1025 D/m2. Structures of co-deposited W layers are investigated by field-emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD), and the corresponding D retention and release behaviors are studied as functions of deposition and exposure parameters using thermal desorption spectroscopy (TDS). Two main D release peaks were detected from TDS spectra located near 600 and 800 K in these W and D co-deposited layers, and total deuterium retention increased linearly as a function of W layer's thickness. After deuterium plasma exposure, the total D retention amount in W layer increases significantly and D release peak shifts to lower temperature. Clearly, despite the high density of defects expected in co-deposited W layers, the initial deuterium retention before exposure to the deuterium plasma is low even for the samples with a W&D layer. But due to the high densities of defects, during the deuterium plasma exposure the deuterium retention increases faster for co-deposited layer than for the bulk W sample.

Nanostructured diamond layers enhance the infrared spectroscopy of biomolecules.

PubMed

Kozak, Halyna; Babchenko, Oleg; Artemenko, Anna; Ukraintsev, Egor; Remes, Zdenek; Rezek, Bohuslav; Kromka, Alexander

2014-03-04

We report on the fabrication and practical use of high-quality optical elements based on Au mirrors coated with diamond layers with flat, nanocolumnar, and nanoporous morphologies. Diamond layers (100 nm thickness) are grown at low temperatures (about 300 °C) from a methane, carbon dioxide, and hydrogen gas mixture by a pulsed microwave plasma system with linear antennas. Using grazing angle reflectance (GAR) Fourier transform infrared spectroscopy with p-polarized light, we compare the IR spectra of fetal bovine serum proteins adsorbed on diamond layers with oxidized (hydrophilic) surfaces. We show that the nanoporous diamond layers provide IR spectra with a signal gain of about 600% and a significantly improved sensitivity limit. This is attributed to its enhanced internal surface area. The improved sensitivity enabled us to distinguish weak infrared absorption peaks of <10-nm-thick protein layers and thereby to analyze the intimate diamond-molecule interface.

The interplay of plasma treatment and gold coating and ultra-high molecular weight polyethylene: On the cytocompatibility.

PubMed

Novotná, Zdenka; Rimpelová, Silvie; Juřík, Petr; Veselý, Martin; Kolská, Zdenka; Hubáček, Tomáš; Ruml, Tomáš; Švorčík, Václav

2017-02-01

We have investigated the application of Ar plasma for creation of nanostructured ultra high molecular weight polyethylene (PE) surface in order to enhance adhesion of mouse embryonic fibroblasts (L929). The aim of this study was to investigate the effect of the interface between plasma-treated and gold-coated PE on adhesion and spreading of cells. The surface properties of pristine samples and its modified counterparts were studied by different experimental techniques (gravimetry, goniometry and X-ray photoelectron spectroscopy (XPS), electrokinetic analysis), which were used for characterization of treated and sputtered layers, polarity and surface chemical structure, respectively. Further, atomic force microscopy (AFM) was employed to study the surface morphology and roughness. Biological responses of cells seeded on PE samples were evaluated in terms of cell adhesion, spreading, morphology and proliferation. Detailed cell morphology and intercellular connections were followed by scanning electron microscopy (SEM). As it was expected the thickness of a deposited gold film was an increasing function of the sputtering time. Despite the fact that plasma treatment proceeded in inert plasma, oxidized degradation products were formed on the PE surface which would contribute to increased hydrophilicity (wettability) of the plasma treated polymer. The XPS method showed a decrease in carbon concentration with increasing plasma treatment. Cell adhesion measured on the interface between plasma treated and gold coated PE was inversely proportional to the thickness of a gold layer on a sample. Copyright © 2016. Published by Elsevier B.V.

Fabrication technology of CNT-Nickel Oxide based planar pseudocapacitor for MEMS and NEMS

NASA Astrophysics Data System (ADS)

Lebedev, E. A.; Kitsyuk, E. P.; Gavrilin, I. M.; Gromov, D. G.; Gruzdev, N. E.; Gavrilov, S. A.; Dronov, A. A.; Pavlov, A. A.

2015-11-01

Fabrication technology of planar pseudocapacitor (PsC) based on carbon nanotube (CNT) forest, synthesized using plasma enhanced chemical vapor deposition (PECVD) method, covered with thin nickel oxide layer deposited by successive ionic layer adsorption and reaction (SILAR) method, is demonstrated. Dependences of deposited oxide layers thickness on device specific capacities is studied. It is shown that pseudocapacity of nickel oxide thin layer increases specific capacity of the CNT's based device up to 2.5 times.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poletika, T. M., E-mail: poletm@ispms.tsc.ru; Girsova, S. L., E-mail: llm@ispms.tsc.ru; Meisner, L. L., E-mail: girs@ispms.tsc.ru

The structure of the surface and near-surface layers of single crystals of NiTi, differently oriented relative to the direction of ion beam treatment was investigated. The role of the crystallographic orientation in formation of structure of surface layers after ion-plasma alloying was revealed. It was found that the orientation effects of selective sputtering and channeling determine the thickness of the oxide and amorphous layers, the depth of penetration of ions and impurities, the distribution of Ni with depth.

Numerically simulated two-dimensional auroral double layers

NASA Technical Reports Server (NTRS)

Borovsky, J. E.; Joyce, G.

1983-01-01

A magnetized 2 1/2-dimensional particle-in-cell system which is periodic in one direction and bounded by reservoirs of Maxwellian plasma in the other is used to numerically simulate electrostatic plasma double layers. For the cases of both oblique and two-dimensional double layers, the present results indicate periodic instability, Debye length rather than gyroradii scaling, and low frequency electrostatic turbulence together with electron beam-excited electrostatatic electron-cyclotron waves. Estimates are given for the thickness of auroral doule layers, as well as the separations within multiple auroral arcs. Attention is given to the temporal modulation of accelerated beams, and the possibilities for ion precipitation and ion conic production by the double layer are hypothesized. Simulations which include the atmospheric backscattering of electrons imply the action of an ionospheric sheath which accelerates ionospheric ions upward.

Plasma spraying method for forming diamond and diamond-like coatings

DOEpatents

Holcombe, Cressie E.; Seals, Roland D.; Price, R. Eugene

1997-01-01

A method and composition for the deposition of a thick layer (10) of diamond or diamond-like material. The method includes high temperature processing wherein a selected composition (12) including at least glassy carbon is heated in a direct current plasma arc device to a selected temperature above the softening point, in an inert atmosphere, and is propelled to quickly quenched on a selected substrate (20). The softened or molten composition (18) crystallizes on the substrate (20) to form a thick deposition layer (10) comprising at least a diamond or diamond-like material. The selected composition (12) includes at least glassy carbon as a primary constituent (14) and may include at least one secondary constituent (16). Preferably, the secondary constituents (16) are selected from the group consisting of at least diamond powder, boron carbide (B.sub.4 C) powder and mixtures thereof.

Fabrication of Thickness-Controllable Micropatterned Polyelectrolyte-Film/Nanoparticle Surfaces by Using the Plasma Oxidation Method.

PubMed

Zhu, Chun-Tao; Ma, Sheng-Hua; Zhang, Ying; Wang, Xue-Jing; Lv, Peng; Han, Xiao-Jun

2016-04-05

We have demonstrated a novel way to form thickness-controllable polyelectrolyte-film/nanoparticle patterns by using a plasma etching technique to form, first, a patterned self-assembled monolayer surface, followed by layer-by-layer assembly of polyelectrolyte-films/nanoparticles. Octadecyltrimethoxysilane (ODS) and (3-aminopropyl)triethoxysilane (APTES) self-assembled monolayers (SAMs) were used for polyelectrolyte-film and nanoparticle patterning, respectively. The resolution of the proposed patterning method can easily reach approximately 2.5 μm. The height of the groove structure was tunable from approximately 2.5 to 150 nm. The suspended lipid membrane across the grooves was fabricated by incubating the patterned polyelectrolyte groove arrays in solutions of 1,2-dioleoyl-sn-glycero-3-phosphocholine (DOPC) giant unilamellar vesicles (GUVs). The method demonstrated here reveals a new path to create patterned 2D or 3D structures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of Plasma Nitriding and Nitrocarburizing on HVOF-Sprayed Stainless Steel Coatings

NASA Astrophysics Data System (ADS)

Park, Gayoung; Bae, Gyuyeol; Moon, Kyungil; Lee, Changhee

2013-12-01

In this work, the effects of plasma nitriding (PN) and nitrocarburizing on HVOF-sprayed stainless steel nitride layers were investigated. 316 (austenitic), 17-4PH (precipitation hardening), and 410 (martensitic) stainless steels were plasma-nitrided and nitrocarburized using a N2 + H2 gas mixture and the gas mixture containing C2H2, respectively, at 550 °C. The results showed that the PN and nitrocarburizing produced a relatively thick nitrided layer consisting of a compound layer and an adjacent nitrogen diffusion layer depending on the crystal structures of the HVOF-sprayed stainless steel coatings. Also, the diffusion depth of nitrogen increased when a small amount of C2H2 (plasma nitrocarburizing process) was added. The PN and nitrocarburizing resulted in not only an increase of the surface hardness, but also improvement of the load bearing capacity of the HVOF-sprayed stainless steel coatings because of the formation of CrN, Fe3N, and Fe4N phases. Also, the plasma-nitrocarburized HVOF-sprayed 410 stainless steel had a superior surface microhardness and load bearing capacity due to the formation of Cr23C6 on the surface.

Turbulent Mixing Layer Control using Ns-DBD Plasma Actuators

NASA Astrophysics Data System (ADS)

Singh, Ashish; Little, Jesse

2016-11-01

A low speed turbulent mixing layer (Reθo =1282, U1 /U2 = 0 . 28 and U2 = 11 . 8 m / s) is subject to nanosecond pulse driven dielectric barrier discharge (ns-DBD) plasma actuation. The forcing frequency corresponds to a Strouhal number (St) of 0.032 which is the most amplified frequency based on stability theory. Flow response is studied as a function of the pulse energy, the energy input time scale (carrier frequency) and the duration of actuation (duty cycle). It is found that successful actuation requires a combination of forcing parameters. An evaluation of the forcing efficacy is achieved by examining different flow quantities such as momentum thickness, vorticity and velocity fluctuations. In accordance with past work, a dependence is found between the initial shear layer thickness and the energy coupled to the flow. More complex relationships are also revealed such as a limitation on the maximum pulse energy which yields control. Also, the pulse energy and the carrier frequency (inverse of period between successive pulses) are interdependent whereby an optimum exists between them and extreme values of either parameter is inconsonant with the control desired. These observations establish a rich and complex process behind ns-DBD plasma actuation. Air Force Office of Scientific Research (FA9550-12-1-0044).

Properties, ageing behavior and stability of bipolar films containing nano-layers of allylamine and acrylic acid plasma polymers

NASA Astrophysics Data System (ADS)

Aziz, Gaelle; Asadian, Mahtab; Declercq, Heidi; Morent, Rino; De Geyter, Nathalie

2018-06-01

In this work, a dielectric barrier discharge (DBD) has been used for the deposition of bipolar films containing alternating nano-layers of plasma polymerized allylamine (PPAam) and acrylic acid (PPAac). Various films were obtained by varying the single-layer thickness of each plasma polymer while maintaining a constant total film thickness and two kinds of films were fabricated via different depositing sequences (PPAam/Aac and PPAac/Aam). Films properties, ageing in air and stability in water over a 7 days period were investigated. Results showed that, COO- and NH3+ polar entities, generated from the interaction of PPAam and PPAac, are present in the bipolar films. Concerning the films stability, the different reaction mechanisms involved in the formation of each kind of films resulted in a higher amount of polar groups in the PPAam/Aac films; this conferred these films a higher stability than PPAac/Aam. Concerning the films ageing behavior, all prepared samples underwent some kind of ageing which was found to be dependent on the deposition sequence. Results also showed that bipolar coatings exhibited better cell-material interactions compared to PPAam and PPAac films; with a better cell viability observed on PPAam/Aac coatings after 1 and 7 days culture.

Feedback enhanced plasma spray tool

DOEpatents

Gevelber, Michael Alan; Wroblewski, Donald Edward; Fincke, James Russell; Swank, William David; Haggard, Delon C.; Bewley, Randy Lee

2005-11-22

An improved automatic feedback control scheme enhances plasma spraying of powdered material through reduction of process variability and providing better ability to engineer coating structure. The present inventors discovered that controlling centroid position of the spatial distribution along with other output parameters, such as particle temperature, particle velocity, and molten mass flux rate, vastly increases control over the sprayed coating structure, including vertical and horizontal cracks, voids, and porosity. It also allows improved control over graded layers or compositionally varying layers of material, reduces variations, including variation in coating thickness, and allows increasing deposition rate. Various measurement and system control schemes are provided.

Influence of low energy argon plasma treatment on the moisture barrier performance of hot wire-CVD grown SiNx multilayers

NASA Astrophysics Data System (ADS)

Majee, Subimal; Fátima Cerqueira, Maria; Tondelier, Denis; Geffroy, Bernard; Bonnassieux, Yvan; Alpuim, Pedro; Bourée, Jean Eric

2014-01-01

The reliability and stability are key issues for the commercial utilization of organic photovoltaic devices based on flexible polymer substrates. To increase the shelf-lifetime of these devices, transparent moisture barriers of silicon nitride (SiNx) films are deposited at low temperature by hot wire CVD (HW-CVD) process. Instead of the conventional route based on organic/inorganic hybrid structures, this work defines a new route consisting in depositing multilayer stacks of SiNx thin films, each single layer being treated by argon plasma. The plasma treatment allows creating smoother surface and surface atom rearrangement. We define a critical thickness of the single layer film and focus our attention on the effect of increasing the number of SiNx single-layers on the barrier properties. A water vapor transmission rate (WVTR) of 2 × 10-4 g/(m2·day) is reported for SiNx multilayer stack and a physical interpretation of the plasma treatment effect is given.

The Effect of Interface Roughness and Oxide Film Thickness on the Inelastic Response of Thermal Barrier Coatings to Thermal Cycling

NASA Technical Reports Server (NTRS)

Pindera, Marek-Jerzy; Aboudi, Jacob; Arnold, Steven M.

1999-01-01

The effects of interfacial roughness and oxide film thickness on thermally-induced stresses in plasma-sprayed thermal barrier coatings subjected to thermal cycling are investigated using the recently developed higher-order theory for functionally graded materials. The higher-order theory is shown to be a viable alternative to the finite-element approach, capable of modeling different interfacial roughness architectures in the presence of an aluminum oxide layer and capturing the high stress gradients that occur at the top coat/bond coat interface. The oxide layer thickness is demonstrated to have a substantially greater effect on the evolution of residual stresses than local variations in interfacial roughness. Further, the location of delamination initiation in the top coat is predicted to change with increasing oxide layer thickness. This result can be used to optimize the thickness of a pre-oxidized layer introduced at the top coat/bond coat interface in order to enhance TBC durability as suggested by some researchers. The results of our investigation also support a recently proposed hypothesis regarding delamination initiation and propagation in the presence of an evolving bond coat oxidation, while pointing to the importance of interfacial roughness details and specimen geometry in modeling this phenomenon.

Formation of ZrO{sub 2} in coating on Mg–3 wt.%Al–1 wt.%Zn alloy via plasma electrolytic oxidation: Phase and structure of zirconia

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kang Min; Kim, Yeon Sung; Yang, Hae Woong

2015-01-15

An investigation of the coating structure formed on Mg–3 wt.%Al–1 wt.%Zn alloy sample subjected to plasma electrolytic oxidation was examined by field-emission transmission electron microscopy. The plasma electrolytic oxidation process was conducted in a phosphoric acid electrolyte containing K{sub 2}ZrF{sub 6} for 600 s. Microstructural observations showed that the coating consisting of MgO, MgF{sub 2}, and ZrO{sub 2} phases was divided into three distinctive parts, the barrier, intermediate, and outer layers. Nanocrystalline MgO and MgF{sub 2} compounds were observed mainly in the barrier layer of ~ 1 μm thick near to the substrate. From the intermediate to outer layers, variousmore » ZrO{sub 2} polymorphs appeared due to the effects of the plasma arcing temperature on the phase transition of ZrO{sub 2} compounds during the plasma electrolytic oxidation process. In the outer layer, MgO compound grew in the form of a dendrite-like structure surrounded by cubic ZrO{sub 2}. - Highlights: • The barrier layer containing MgO and MgF{sub 2} was observed near to the Mg substrate. • In the intermediate layer, m-, t-, and o-ZrO{sub 2} compounds were additionally detected. • The outer layer contained MgO with the dendrite-like structure surrounded by c-ZrO{sub 2}. • The grain sizes of compounds in oxide layer increased from barrier to outer layer.« less

Optical and magneto-optical properties of one-dimensional magnetized coupled resonator plasma photonic crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamidi, S. M.

2012-01-15

In this paper, the optical and magneto-optical properties of one-dimensional magnetized coupled resonator plasma photonic crystals have been investigated. We use transfer matrix method to solve our magnetized coupled resonator plasma photonic crystals consist of dielectric and magnetized plasma layers. The results of the change in the optical and magneto-optical properties of structure as a result of the alteration in the structural properties such as thickness, plasma frequency and collision frequency, plasma filling factor, number of resonators and dielectric constant of dielectric layers and external magnetic field have been reported. The main feature of this structure is a good magneto-opticalmore » rotation that takes place at the defect modes and the edge of photonic band gap of our proposed optical magnetized plasma waveguide. Our outcomes demonstrate the potential applications of the device for tunable and adjustable filters or reflectors and active magneto-optic in microwave devices under structural parameter and external magnetic field.« less

Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

NASA Astrophysics Data System (ADS)

Muthusubramanian, N.; Galan, E.; Maity, C.; Eelkema, R.; Grozema, F. C.; van der Zant, H. S. J.

2016-07-01

We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al2O3 thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the range of 1 to 10-4 G0 (1 G0 = 77 μS), where single-molecule conductances are commonly observed. The insulated devices were used to measure the conductance of an amphiphilic oligophenylene ethynylene derivative in deionized water.

Electrochemical testing of suspension plasma sprayed solid oxide fuel cell electrolytes

NASA Astrophysics Data System (ADS)

Waldbillig, D.; Kesler, O.

Electrochemical performance of metal-supported plasma sprayed (PS) solid oxide fuel cells (SOFCs) was tested for three nominal electrolyte thicknesses and three electrolyte fabrication conditions to determine the effects of electrolyte thickness and microstructure on open circuit voltage (OCV) and series resistance (R s). The measured OCV values were approximately 90% of the Nernst voltages, and electrolyte area specific resistances below 0.1 Ω cm 2 were obtained at 750 °C for electrolyte thicknesses below 20 μm. Least-squares fitting was used to estimate the contributions to R s of the YSZ bulk material, its microstructure, and the contact resistance between the current collectors and the cells. It was found that the 96% dense electrolyte layers produced from high plasma gas flow rate conditions had the lowest permeation rates, the highest OCV values, and the smallest electrolyte-related voltage losses. Optimal electrolyte thicknesses were determined for each electrolyte microstructure that would result in the lowest combination of OCV loss and voltage loss due to series resistance for operating voltages of 0.8 V and 0.7 V.

Layered composites made from bimetallic strips produced by plasma spraying of TiAl on niobium

NASA Astrophysics Data System (ADS)

Burmistrov, V. I.; Antonova, A. V.; Povarova, K. B.; Bannykh, I. O.

2007-12-01

The production and structure of a multilayer TiAl/Nb composite material made from bimetallic TiAl/Nb strips fabricated by plasma spraying of TiAl granules onto niobium plates are studied. Here, 3-mm-and 2-mm-thick plates of a layered composite material (LCM) are produced by hot isostatic pressing of a stack of 35 bimetallic plates followed by hot rolling (the total degree of reduction is 78.6 and 85.7%, respectively). The LCM consists of discontinuous TiAl layers separated by niobium layers, and the adhesion between the layers is good. Diffusional intermediate layers form at the TiAl/Nb interfaces in the 3-mm-thick LCM and consist of the following two solid solutions: an α2-Ti3Al-based solid solution contains up to 28 at % Nb, and a niobiumbased solid solution contains up to 27 at % Ti and 32 at % Al. The diffusional intermediate layers in the 2-mmthick LCM plates consist of an α2-Ti3Al-based solid solution with up to 16.0 at % Nb; a τ-Ti3Al2Nb-or Ti4Al3Nb-based solid solution with 51.5 at % Ti, 32 at % Al, and 16.5 at % Nb; and a niobium-based solid solution with up to 22 at % Ti and 30.5 at % Al. When a bimetallic TiAl/Nb strip is fabricated by plasma spraying of granules of the Ti-48 at % Al alloy, this alloy is depleted of aluminum to 42 45 at %, and the fraction of the α2-Ti3Al phase in the sprayed layer increases. When the LCM is produced by hot isostatic pressing followed by hot rolling, the layer of plain niobium (Nb1) dissolves up to 5 at % Ti and 7 at % Al.

Cleaning of optical surfaces by capacitively coupled RF discharge plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yadav, P. K., E-mail: praveenyadav@rrcat.gov.in; Rai, S. K.; Nayak, M.

2014-04-24

In this paper, we report cleaning of carbon capped molybdenum (Mo) thin film by in-house developed radio frequency (RF) plasma reactor, at different powers and exposure time. Carbon capped Mo films were exposed to oxygen plasma for different durations at three different power settings, at a constant pressure. After each exposure, the thickness of the carbon layer and the roughness of the film were determined by hard x-ray reflectivity measurements. It was observed that most of the carbon film got removed in first 15 minutes exposure. A high density layer formed on top of the Mo film was also observedmore » and it was noted that this layer cannot be removed by successive exposures at different powers. A significant improvement in interface roughness with a slight improvement in top film roughness was observed. The surface roughness of the exposed and unexposed samples was also confirmed by atomic force microscopy measurements.« less

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber

NASA Astrophysics Data System (ADS)

Zhang, Xiao-Dan; Sun, Fu-He; Wei, Chang-Chun; Sun, Jian; Zhang, De-Kun; Geng, Xin-Hua; Xiong, Shao-Zhen; Zhao, Ying

2009-10-01

This paper studies boron contamination at the interface between the p and i layers of μc-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μc-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μc-Si:H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.

Fabrication of Nanosized Lanthanum Zirconate Powder and Deposition of Thermal Barrier Coating by Plasma Spray Process

NASA Astrophysics Data System (ADS)

Mishra, S. K.; Jagdeesh, N.; Pathak, L. C.

2016-07-01

The present manuscript discusses our findings on fabrication of nanosized lanthanum zirconate powder for thermal barrier coating application and its coating by plasma spray on nickel-based superalloy substrate. Single-phase La2Zr2O7 coating of thickness of the order of 45 µm on the Ni-Cr-Al bond coat coated Ni-based superalloy substrate was deposited by plasma spray process. The layers at the interface did not show spallation and inter diffusion was very less. The microstructure, interface, porosity, and mechanical properties of different layers are investigated. The lanthanum zirconate hardness and modulus were 10.5 and 277 GPa, respectively. The load depth curve for lanthanum zirconate showed good elastic recovery around 74%.

Cell adhesion and proliferation on poly(tetrafluoroethylene) with plasma-metal and plasma-metal-carbon interfaces

NASA Astrophysics Data System (ADS)

Reznickova, Alena; Kvitek, Ondrej; Kolarova, Katerina; Smejkalova, Zuzana; Svorcik, Vaclav

2017-06-01

The aim of this article is to investigate the effect of the interface between plasma activated, gold and carbon coated poly(tetrafluoroethylene) (PTFE) on in vitro adhesion and spreading of mouse fibroblasts (L929). Surface properties of pristine and modified PTFE were studied by several experimental techniques. The thickness of a deposited gold film is an increasing function of the sputtering time, conversely thickness of carbon layer decreases with increasing distance between carbon source and the substrate. Because all the used surface modification techniques take place in inert Ar plasma, oxidized degradation products are formed on the PTFE surface, which affects wettability of the polymer surface. Cytocompatibility tests indicate that on samples with Au/C interface, the cells accumulate on the part of sample with evaporated carbon. Number of L929 cells proliferated on the studied samples is comparable to tissue culture polystyrene standard.

Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon.

PubMed

Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca I

2017-03-06

Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C.

Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon

PubMed Central

Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca i

2017-01-01

Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C. PMID:28262840

Magnetoresistance enhancement in specular, bottom-pinned, Mn83Ir17 spin valves with nano-oxide layers

NASA Astrophysics Data System (ADS)

Veloso, A.; Freitas, P. P.; Wei, P.; Barradas, N. P.; Soares, J. C.; Almeida, B.; Sousa, J. B.

2000-08-01

Bottom-pinned Mn83Ir17 spin valves with enhanced specular scattering were fabricated, showing magnetoresistance (MR) values up to 13.6%, lower sheet resistance R□ and higher ΔR□. Two nano-oxide layers (NOL) are grown on both sides of the CoFe/Cu/CoFe spin valve structure by natural oxidation or remote plasma oxidation of the starting CoFe layer. Maximum MR enhancement is obtained after just 1 min plasma oxidation. Rutherford backscattering analysis shows that a 15±2 Å oxide layer grows at the expense of the initial (prior to oxidation) CoFe layer, with ˜12% reduction of the initial 40 Å CoFe thickness. X-ray reflectometry indicates that Kiessig fringes become better defined after NOL growth, indicating smoother inner interfaces, in agreement with the observed decrease of the spin valve ferromagnetic Néel coupling.

Study of the amorphization of surface silicon layers implanted by low-energy helium ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomov, A. A., E-mail: lomov@ftian.ru; Myakon’kikh, A. V.; Oreshko, A. P.

2016-03-15

The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2–5)-keV helium ions to a dose of D = 6 × 10{sup 15}–5 × 10{sup 17} cm{sup –2} have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ(z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 10{sup 16} cm{sup –2} leads to the formation of a 20- to 30-nm-thick amorphizedmore » surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer.« less

Quantification of elemental area densities in multiple metal layers (Au/Ni/Cu) on a Cr-coated quartz glass substrate for certification of NMIJ CRM 5208-a.

PubMed

Ariga, Tomoko; Zhu, Yanbei; Ito, Mika; Takatsuka, Toshiko; Terauchi, Shinya; Kurokawa, Akira; Inagaki, Kazumi

2018-04-01

Area densities of Au/Ni/Cu layers on a Cr-coated quartz substrate were characterized to certify a multiple-metal-layer certified reference material (NMIJ CRM5208-a) that is intended for use in the analysis of the layer area density and the thickness by an X-ray fluorescence spectrometer. The area densities of Au/Ni/Cu layers were calculated from layer mass amounts and area. The layer mass amounts were determined by using wet chemical analyses, namely inductively coupled plasma mass spectrometry (ICP-MS), isotope-dilution (ID-) ICP-MS, and inductively coupled plasma optical emission spectrometry (ICP-OES) after dissolving the layers with diluted mixture of HCl and HNO 3 (1:1, v/v). Analytical results of the layer mass amounts obtained by the methods agreed well with each another within their uncertainty ranges. The area of the layer was determined by using a high-resolution optical scanner calibrated by Japan Calibration Service System (JCSS) standard scales. The property values of area density were 1.84 ± 0.05 μg/mm 2 for Au, 8.69 ± 0.17 μg/mm 2 for Ni, and 8.80 ± 0.14 μg/mm 2 for Cu (mean ± expanded uncertainty, coverage factor k = 2). In order to assess the reliability of these values, the density of each metal layer calculated from the property values of the area density and layer thickness measured by using a scanning electron microscope were compared with available literature values and good agreement between the observed values and values obtained in previous studies.

Very thick mixture oxide ion beam sputtering films for investigation of nonlinear material properties

NASA Astrophysics Data System (ADS)

Steinecke, Morten; Kiedrowski, Kevin; Jupé, Marco; Ristau, Detlev

2017-11-01

Currently, optical coating technology is facing a multitude of new challenges. Some of the new requirements are addressed to the spectral behavior of complex coatings, but in addition, the power handling capabilities gain in importance. Often, both demands are combined in the same component, for example in chirped mirrors for ultra-short pulse applications. The consequent demands on the accuracy of the layer thicknesses and the stability of the refractive indices require a deposition by sputtering processes. For high end components, Ion Beam Sputtering (IBS) is often the method of choice. Utilizing the Co-sputtering technique, IBS additionally allows a higher flexibility in the possible coating materials by mixing two pure oxides into one ternary composite material. These composite materials are also advantageous for researching third order nonlinear effects, which can limit the functionality of optics at high powers. The layer thicknesses required for this fundamental research often exceed 100 µm, which therefore makes low stress and absorption in the layer materials mandatory. A reduction of these decisive properties can be achieved by a thermal treatment of the sample. Usually, this is performed by a post-deposition annealing. Alternatively, the coating temperature can be increased. This is rarely done for IBS processes, but it can be assumed, that the effect is comparable to that of ex-situ annealing. In this work, different ternary mixtures of Al2O3/SiO2, HfO2/Al2O3 as well as Nb2O5/Al2O3 were investigated for their layer stress and absorption, applying both, in-situ temperature treatment as well as post manufacturing annealing. It is observed that suitable thermal treatment as well as material composition can significantly reduce layer stress and absorption in the deposited layer. This enabled the manufacturing of layers with thicknesses of over 180 µm as well as the measurement of nonlinear properties of the deposited materials. Contribution to the topical issue "Plasma Sources and Plasma Processes (PSPP)", edited by Luis Lemos Alves, Thierry Belmonte and Tiberiu Minea

Modifying Surface Fluctuations of Polymer Melt Films with Substrate Modification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Yang; He, Qiming; Zhang, Fan

Deposition of a plasma polymerized film on a silicon substrate substantially changes the fluctuations on the surface of a sufficiently thin, melt polystyrene (PS) film atop the substrate. Surface fluctuation relaxation times measured with X-ray photon correlation spectroscopy (XPCS) for ca. 4R g thick melt films of 131 kg/mol linear PS on silicon and on a plasma polymer modified silicon wafer can both be described using a hydrodynamic continuum theory (HCT) that assumes the film is characterized throughout its depth by the bulk viscosity. However, when the film thickness is reduced to ~3R g, confinement effects are evident. The surfacemore » fluctuations are slower than predicted using the HCT, and the confinement effect for the PS on silicon is larger than that for the PS on the plasma polymerized film. This deviation is thus due to a difference in the thicknesses of the strongly adsorbed layers at the substrate which are impacted by the substrate surface energy.« less

Modifying Surface Fluctuations of Polymer Melt Films with Substrate Modification

DOE PAGES

Zhou, Yang; He, Qiming; Zhang, Fan; ...

2017-08-14

Deposition of a plasma polymerized film on a silicon substrate substantially changes the fluctuations on the surface of a sufficiently thin, melt polystyrene (PS) film atop the substrate. Surface fluctuation relaxation times measured with X-ray photon correlation spectroscopy (XPCS) for ca. 4R g thick melt films of 131 kg/mol linear PS on silicon and on a plasma polymer modified silicon wafer can both be described using a hydrodynamic continuum theory (HCT) that assumes the film is characterized throughout its depth by the bulk viscosity. However, when the film thickness is reduced to ~3R g, confinement effects are evident. The surfacemore » fluctuations are slower than predicted using the HCT, and the confinement effect for the PS on silicon is larger than that for the PS on the plasma polymerized film. This deviation is thus due to a difference in the thicknesses of the strongly adsorbed layers at the substrate which are impacted by the substrate surface energy.« less

Novel approach for III-N on Si (111) templates fabrication by low-temperature PA MBE using porous Si layer

NASA Astrophysics Data System (ADS)

Zolotukhin, D.; Seredin, P.; Lenshin, A.; Goloshchapov, D.; Mizerov, A.

2017-11-01

We report on successful growth of GaN nanorods by low-temperature plasma-assisted molecular beam epitaxy on a Si(111) substrate with and without preformed thin porous Si layer (por-Si). The deposited GaN initially forms islands which act as a seed for the wires. Porous structure of the por-Si layer helps to control nucleation islands sizes and achieve homogeneous distribution of the nanorods diameters. In addition 850 nm-thick crack-free GaN layer was formed on Si(111) substrate with preformed por-Si layer.

Evaluation of atomic layer deposited alumina as a protective layer for domestic silver articles: Anti-corrosion test in artificial sweat

NASA Astrophysics Data System (ADS)

Park, Suk Won; Han, Gwon Deok; Choi, Hyung Jong; Prinz, Fritz B.; Shim, Joon Hyung

2018-05-01

This study evaluated the effectiveness of alumina fabricated by atomic layer deposition (ALD) as a protective coating for silver articles against the corrosion caused by body contact. An artificial sweat solution was used to simulate body contact. ALD alumina layers of varying thicknesses ranging from 20 to 80 nm were deposited on sputtered silver samples. The stability of the protective layer was evaluated by immersing the coated samples in the artificial sweat solution at 25 and 35 °C for 24 h. We confirmed that a sufficiently thick layer of ALD alumina is effective in protecting the shape and light reflectance of the underlying silver, whereas the uncoated bare silver is severely degraded by the artificial sweat solution. Inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy were used for in-depth analyses of the chemical stability of the ALD-coated silver samples after immersion in the sweat solution.

Finite element study of three dimensional radiative nano-plasma flow subject to Hall and ion slip currents

NASA Astrophysics Data System (ADS)

Nawaz, M.; Zubair, T.

In this article, we developed a computer code of Galerikan Finite Element method (GFEM) for three dimensional flow equations of nano-plasma fluid (blood) in the presence of uniform applied magnetic field when Hall and ion slip current are significant. Lorentz force is calculated through generalized Ohm's law with Maxwell equations. A series of numerical simulations are carried out to search ηmax and algebraic equations are solved by Gauss-Seidel method with simulation tolerance 10-8 . Simulated results for special case have an excellent agreement with the already published results. Velocity components and temperature of the nano-plasma (blood) are influenced significantly by the inclusion of nano-particles of Copper (Cu) and Silver (Ag). Heat enhancement is observed when copper and silver nonmagnetic nanoparticles are used instead of simple base fluid (conventional fluid). Radiative nature of nano-plasma in the presence of magnetic field causes a decrease in the temperature due to the transfer of heat by the electromagnetic waves. In contrast to this, due to heat dissipated by Joule heating and viscous dissipation phenomena, temperature of nano-plasmaincreases as thermal radiation parameter is increased. Thermal boundary layer thickness can be controlled by using radiative fluid instead of non-radiative fluid. Momentum boundary layer thickness can be reduced by increasing the intensity of the applied magnetic field. Temperature of plasma in the presence magnetic field is higher than the plasma in the absence of magnetic field.

The dependence of the strength and thickness of field-aligned currents on solar wind and ionospheric parameters

PubMed Central

Johnson, Jay R.; Wing, Simon

2017-01-01

Sheared plasma flows at the low-latitude boundary layer (LLBL) correlate well with early afternoon auroral arcs and upward field-aligned currents. We present a simple analytic model that relates solar wind and ionospheric parameters to the strength and thickness of field-aligned currents (Λ) in a region of sheared velocity, such as the LLBL. We compare the predictions of the model with DMSP observations and find remarkably good scaling of the upward region 1 currents with solar wind and ionospheric parameters in region located at the boundary layer or open field lines at 1100–1700 magnetic local time. We demonstrate that Λ~nsw−0.5 and Λ ~ L when Λ/L < 5 where L is the auroral electrostatic scale length. The sheared boundary layer thickness (Δm) is inferred to be around 3000 km, which appears to have weak dependence on Vsw. J‖ has dependencies on Δm, Σp, nsw, and Vsw. The analytic model provides a simple way to organize data and to infer boundary layer structures from ionospheric data. PMID:29057194

Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.

2016-07-18

The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locatemore » in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.« less

Fabrication and Characterization of Plasma Electrolytic Borocarburized Layers on Q235 Low-Carbon Steel at Different Discharge Voltages

NASA Astrophysics Data System (ADS)

Wang, Bin; Wu, Jie; Jin, Xiaoyue; Wu, Xiaoling; Wu, Zhenglong; Xue, Wenbin

The influence of applied voltage on the plasma electrolytic borocarburizing (PEB/C) layer of Q235 low-carbon steel in high-concentration borax solution was investigated. XRD and XPS spectra of PEB/C layer confirmed that the modified boride layer mainly consisted of Fe2B phase, and the FeB phase only exists in the loose top layer. The applied voltage on Q235 steel played a key role in determining the properties of hardened layers. The thickness and microhardness of boride layers increased with the increase of the applied voltage, which led to superior corrosion and wear resistances of Q235 low-carbon steel. The diffusion coefficient (D) of boride layer at 280, 300 and 330V increased with borocarburizing temperature and ranged from 0.062×10-12m2/s to 0.462×10-12m2/s. The activation energy (Q) of boride layer growth during PEB/C treatment was only 52.83kJṡmol-1, which was much lower than that of the conventional boriding process.

Development of an Anti-Corrosion Conductive Nano Carbon Coating Layer on Metal Bipolar Plates.

PubMed

Yeo, Kiho; Kim, Juyong; Kim, Jongryoul

2018-09-01

For automotive applications of polymer electrolyte membrane fuel cells, the enhancement of the corrosion resistance of metal bipolar plates has been a critical issue with regard to the lifespan of fuel cell stacks. In this paper, we present a novel method for increasing the lifespan by means of a conductive carbon coating on bipolar plates. Conductive carbon films were plasma coated onto metal bipolar plates in a vacuum at various temperatures. As a result, 316L stainless plates with a 10-nm-thick carbon coating layer on a 20-nm-thick CrN undercoat layer showed-contact resistance of 10.71 mΩcm2@10 kgf/cm2 and a corrosion current of 0.5 μA/cm2@0.6 V. This thin coating layer with high conductivity and excellent corrosion resistance suggests a new, effective coating method for the mass production of metal bipolar plates.

Development of Pinhole-Free Amorphous Aluminum Oxide Protective Layers for Biomedical Device Applications

PubMed Central

Litvinov, Julia; Wang, Yi-Ju; George, Jinnie; Chinwangso, Pawilai; Brankovic, Stanko; Willson, Richard C.; Litvinov, Dmitri

2013-01-01

This paper describes synthesis of ultrathin pinhole-free insulating aluminum oxide layers for electronic device protection in corrosive liquid environments, such as phosphate buffered saline (PBS) or clinical fluids, to enable emerging biomedical applications such as biomolecular sensors. A pinhole-free 25-nm thick amorphous aluminum oxide layer has been achieved using ultra-high vacuum DC magnetron reactive sputtering of aluminum in oxygen/argon plasma followed by oxygen plasma post-processing. Deposition parameters were optimized to achieve the best corrosion protection of lithographically defined device structures. Electrochemical deposition of copper through the aluminum oxide layers was used to detect the presence (or absence) of pinholes. FTIR, XPS, and spectroscopic ellipsometry were used to characterize the material properties of the protective layers. Electrical resistance of the copper device structures protected by the aluminum oxide layers and exposed to a PBS solution was used as a metric to evaluate the long-term stability of these device structures. PMID:23682201

Refurbishing of carbon contaminated pre-mirror of reflectivity beam line at Indus-1

NASA Astrophysics Data System (ADS)

Yadav, P. K.; Kumar, M.; Gupta, R. K.; Sinha, M.; Patel, H. S.; Modi, M. H.

2018-04-01

In recent days optics contamination and its refurbishing is a serious issue for synchrotron radiation beam line community. Here we refurbished a carbon contaminated mirror by Ar and O2 gas mixed (1:1) radio frequency plasma. For structural analysis pre and post characterization of the mirror was done by Soft X-ray reflectivity (SXRR), Raman Spectroscopy (RS) and Atomic force microscopy (AFM). Before refurbishing mirror, a low density graphitic carbon layer of thickness 400 Å with surface roughness about 55 Å and Au surface roughness 14Å was estimated by SXRR. After one hour RF plasma exposure it is observed by SXRR and Raman spectroscopy that carbon layer is completely removed. The AFM and SXRR results show that roughness of Au surface not increase after plasma exposure.

One-step microwave plasma enhanced chemical vapor deposition (MW-PECVD) for transparent superhydrophobic surface

NASA Astrophysics Data System (ADS)

Thongrom, Sukrit; Tirawanichakul, Yutthana; Munsit, Nantakan; Deangngam, Chalongrat

2018-02-01

We demonstrate a rapid and environmental friendly fabrication technique to produce optically clear superhydrophobic surfaces using poly (dimethylsiloxane) (PDMS) as a sole coating material. The inert PDMS chain is transformed into a 3-D irregular solid network through microwave plasma enhanced chemical vapor deposition (MW-PECVD) process. Thanks to high electron density in the microwave-activated plasma, coating can be done in just a single step with rapid deposition rate, typically much shorter than 10 s. Deposited layers show excellent superhydrophobic properties with water contact angles of ∼170° and roll-off angles as small as ∼3°. The plasma-deposited films can be ultrathin with thicknesses under 400 nm, greatly diminishing the optical loss. Moreover, with appropriate coating conditions, the coating layer can even enhance the transmission over the entire visible spectrum due to a partial anti-reflection effect.

Movement of the Melt Metal Layer under Conditions Typical of Transient Events in ITER

NASA Astrophysics Data System (ADS)

Poznyak, I. M.; Safronov, V. M.; Zybenko, V. Yu.

2017-12-01

During the operation of ITER, protective coatings of the divertor and the first wall will be exposed to significant plasma heat loads which may cause a huge erosion. One of the major failure mechanisms of metallic armor is diminution of their thickness due to the melt layer displacement. New experimental data are required in order to develop and validate physical models of the melt layer movement. The paper presents the experiments where metal targets were irradiated by a plasma stream at the quasi-stationary high-current plasma accelerator QSPA-T. The obtained data allow one to determine the velocity and acceleration of the melt layer at various distances from the plasma stream axis. The force causing the radial movement of the melt layer is shown to create an acceleration whose order of magnitude is 1000g. The pressure gradient is not responsible for creating this large acceleration. To investigate the melt layer movement under a known force, the experiment with a rotating target was carried out. The influence of centrifugal and Coriolis forces led to appearance of curved elongated waves on the surface. The surface profile changed: there is no hill in the central part of the erosion crater in contrast to the stationary target. The experimental data clarify the trends in the melt motion that are required for development of theoretical models.

Experimental Investigation of the Properties of an Acoustic Wave Induced by Laser Ablation of a Solid Target in Water-Confined Plasma Propulsion

NASA Astrophysics Data System (ADS)

Zheng, Zhiyuan; Gao, Hua; Gao, Lu; Xing, Jie

2014-11-01

Acoustic waves generated in nanosecond pulsed-laser ablation of a solid target in both air and water-confined environments were measured experimentally. It was found that the amplitude of the acoustic wave tended to decrease with an increase in water thickness. The waves were analyzed by means of fast Fourier transform. It was shown that there are several frequency components in the acoustic waves with the dominant frequency shifting from high frequency to low frequency as the thickness of the water layer increases. Furthermore, strong acoustic pressure led to enhancement of the coupling of the laser energy to the target in laser plasma propulsion.

Automated Plasma Spray (APS) process feasibility study

NASA Technical Reports Server (NTRS)

Fetheroff, C. W.; Derkacs, T.; Matay, I. M.

1981-01-01

An automated plasma spray (APS) process was developed to apply two layer (NiCrAlY and ZrO2-12Y2O3) thermal barrier coatings to aircraft and stationary gas turbine engine blade airfoils. The APS process hardware consists of four subsystems: a mechanical positioning subsystem incorporating two interlaced six degree of freedom assemblies (one for coating deposition and one for coating thickness monitoring); a noncoherent optical metrology subsystem (for in process gaging of the coating thickness buildup at specified points on the specimen); a microprocessor based adaptive system controller (to achieve the desired overall thickness profile on the specimen); and commerical plasma spray equipment. Over fifty JT9D first stage aircraft turbine blade specimens, ten W501B utility turbine blade specimens and dozens of cylindrical specimens were coated with the APS process in preliminary checkout and evaluation studies. The best of the preliminary turbine blade specimens achieved an overall coating thickness uniformity of 53 micrometers (2.1 mils), much better than is achievable manually. Comparative evaluations of coating thickness uniformity for manually sprayed and APS coated specimens were performed. One of the preliminary turbine blade evaluation specimens was subjected to a torch test and metallographic evaluation. Some cylindrical specimens coated with the APS process survived up to 2000 cycles in subsequent burner rig testing.

Specific features of implosion of metallized fiber arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitrofanov, K. N., E-mail: mitrofan@triniti.ru; Aleksandrov, V. V.; Gritsuk, A. N.

2017-02-15

Implosion of metallized fiber arrays was studied experimentally at the Angara-5-1 facility. The use of such arrays makes it possible to investigate the production and implosion dynamics of plasmas of various metals (such as tin, indium, and bismuth) that were previously unavailable for such studies. The plasma production rates m-dot (in μg/(cm{sup 2} ns)) for different metals were determined and quantitatively compared. Varying the thickness of the metal layer deposited on kapron fibers (the total linear mass of the metal coating being maintained at the level of 220 μg/cm), the current and velocity of the plasma precursor were studied asmore » functions of the thickness of the metal coating. The strong difference in the rates of plasma production from the metal coating and kapron fibers results in the redistribution of the discharge current between the Z-pinch and the trailing fiber plasma. The outer boundary of the plasma produced from the metal coating is found to be stable against instabilities typical of the final stage of implosion of conventional wire arrays.« less

Optical Properties of Al-Doped ZnO Films in the Infrared Region and Their Absorption Applications

NASA Astrophysics Data System (ADS)

Zheng, Hua; Zhang, Rong-Jun; Li, Da-Hai; Chen, Xin; Wang, Song-You; Zheng, Yu-Xiang; Li, Meng-Jiao; Hu, Zhi-Gao; Dai, Ning; Chen, Liang-Yao

2018-05-01

The optical properties of aluminum-doped zinc oxide (AZO) thin films were calculated rapidly and accurately by point-by-point analysis from spectroscopic ellipsometry (SE) data. It was demonstrated that there were two different physical mechanisms, i.e., the interfacial effect and crystallinity, for the thickness-dependent permittivity in the visible and infrared regions. In addition, there was a blue shift for the effective plasma frequency of AZO when the thickness increased, and the effective plasma frequency did not exist for AZO ultrathin films (< 25 nm) in the infrared region, which demonstrated that AZO ultrathin films could not be used as a negative index metamaterial. Based on detailed permittivity research, we designed a near-perfect absorber at 2-5 μm by etching AZO-ZnO alternative layers. The alternative layers matched the phase of reflected light, and the void cylinder arrays extended the high absorption range. Moreover, the AZO absorber demonstrated feasibility and applicability on different substrates.

Surface pre-treatment for barrier coatings on polyethylene terephthalate

NASA Astrophysics Data System (ADS)

Bahre, H.; Bahroun, K.; Behm, H.; Steves, S.; Awakowicz, P.; Böke, M.; Hopmann, Ch; Winter, J.

2013-02-01

Polymers have favourable properties such as light weight, flexibility and transparency. Consequently, this makes them suitable for food packaging, organic light-emitting diodes and flexible solar cells. Nonetheless, raw plastics do not possess sufficient barrier functionality against oxygen and water vapour, which is of paramount importance for most applications. A widespread solution is to deposit thin silicon oxide layers using plasma processes. However, silicon oxide layers do not always fulfil the requirements concerning adhesion and barrier performance when deposited on films. Thus, plasma pre-treatment is often necessary. To analyse the influence of a plasma-based pre-treatment on barrier performance, different plasma pre-treatments on three reactor setups were applied to a very smooth polyethylene terephthalate film before depositing a silicon oxide barrier layer. In this paper, the influence of oxygen and argon plasma pre-treatments towards the barrier performance is discussed examining the chemical and topological change of the film. It was observed that a short one-to-ten-second plasma treatment can reduce the oxygen transmission rate by a factor of five. The surface chemistry and the surface topography change significantly for these short treatment times, leading to an increased surface energy. The surface roughness rises slowly due to the development of small spots in the nanometre range. For very long treatment times, surface roughness of the order of the barrier layer's thickness results in a complete loss of barrier properties. During plasma pre-treatment, the trade-off between surface activation and roughening of the surface has to be carefully considered.

Fabrication of disposable topographic silicon oxide from sawtoothed patterns: control of arrays of gold nanoparticles.

PubMed

Cho, Heesook; Yoo, Hana; Park, Soojin

2010-05-18

Disposable topographic silicon oxide patterns were fabricated from polymeric replicas of sawtoothed glass surfaces, spin-coating of poly(dimethylsiloxane) (PDMS) thin films, and thermal annealing at certain temperature and followed by oxygen plasma treatment of the thin PDMS layer. A simple imprinting process was used to fabricate the replicated PDMS and PS patterns from sawtoothed glass surfaces. Next, thin layers of PDMS films having different thicknesses were spin-coated onto the sawtoothed PS surfaces and annealed at 60 degrees C to be drawn the PDMS into the valley of the sawtoothed PS surfaces, followed by oxygen plasma treatment to fabricate topographic silicon oxide patterns. By control of the thickness of PDMS layers, silicon oxide patterns having various line widths were fabricated. The silicon oxide topographic patterns were used to direct the self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer thin films via solvent annealing process. A highly ordered PS-b-P2VP micellar structure was used to let gold precursor complex with P2VP chains, and followed by oxygen plasma treatment. When the PS-b-P2VP thin films containing gold salts were exposed to oxygen plasma environments, gold salts were reduced to pure gold nanoparticles without changing high degree of lateral order, while polymers were completely degraded. As the width of trough and crest in topographic patterns increases, the number of gold arrays and size of gold nanoparticles are tuned. In the final step, the silicon oxide topographic patterns were selectively removed by wet etching process without changing the arrays of gold nanoparticles.

Stress in (Al, Ga)N heterostructures grown on 6H-SiC and Si substrates byplasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Koshelev, O. A.; Nechaev, D. V.; Sitnikova, A. A.; Ratnikov, V. V.; Ivanov, S. V.; Jmerik, V. N.

2017-11-01

The paper describes experimental results on low temperature plasma-assisted molecular beam epitaxy of GaN/AlN heterostructures on both 6H-SiC and Si(111) substrates. We demonstrate that application of migration enhanced epitaxy and metal-modulated epitaxy for growth of AlN nucleation and buffer layers lowers the screw and edge(total)threading dislocation (TD) densities down to 1.7·108 and 2·109 cm-2, respectively, in a 2.8-μm-thick GaN buffer layer grown atop of AlN/6H-SiC. The screw and total TD densities of 1.2·109 and 7.4·109 cm-2, respectively, were achieved in a 1-μm-thickGaN/AlNheterostructure on Si(111). Stress generation and relaxation in GaN/AlN heterostructures were investigated by using multi-beam optical stress sensor (MOSS) to achieve zero substrate curvature at room temperature. It is demonstrated that a 1-μm-thick GaN/AlN buffer layer grown by PA MBE provides planar substrate morphology in the case of growth on Si substrates whereas 5-μm-thick GaN buffer layers have to be used to achieve the same when growing on 6H-SiC substrates.

Caracterisation of Titanium Nitride Layers Deposited by Reactive Plasma Spraying

NASA Astrophysics Data System (ADS)

Roşu, Radu Alexandru; Şerban, Viorel-Aurel; Bucur, Alexandra Ioana; Popescu, Mihaela; Uţu, Dragoş

2011-01-01

Forming and cutting tools are subjected to the intense wear solicitations. Usually, they are either subject to superficial heat treatments or are covered with various materials with high mechanical properties. In recent years, thermal spraying is used increasingly in engineering area because of the large range of materials that can be used for the coatings. Titanium nitride is a ceramic material with high hardness which is used to cover the cutting tools increasing their lifetime. The paper presents the results obtained after deposition of titanium nitride layers by reactive plasma spraying (RPS). As deposition material was used titanium powder and as substratum was used titanium alloy (Ti6Al4V). Macroscopic and microscopic (scanning electron microscopy) images of the deposited layers and the X ray diffraction of the coatings are presented. Demonstration program with layers deposited with thickness between 68,5 and 81,4 μm has been achieved and presented.

Plasma diffusion at the magnetopause - The case of lower hybrid drift waves

NASA Technical Reports Server (NTRS)

Treumann, R. A.; Labelle, J.; Pottelette, R.

1991-01-01

The diffusion expected from the quasi-linear theory of the lower hybrid drift instability at the earth's magnetopause is recalculated. The resulting diffusion coefficient is marginally large enough to explain the thickness of the boundary layer under quiet conditions, based on observational upper limits for the wave intensities. Thus, one possible model for the boundary layer could involve equilibrium between the diffusion arising from lower hybrid waves and various loss processes.

Boron carbide coating deposition on tungsten and testing of tungsten layers and coating under intense plasma load

DOE Office of Scientific and Technical Information (OSTI.GOV)

Airapetov, A. A.; Begrambekov, L. B., E-mail: lbb@plasma.mephi.ru; Buzhinskiy, O. I.

2015-12-15

A device intended for boron carbide coating deposition and material testing under high heat loads is presented. A boron carbide coating 5 μm thick was deposited on the tungsten substrate. These samples were subjected to thermocycling loads in the temperature range of 400–1500°C. Tungsten layers deposited on tungsten substrates were tested in similar conditions. Results of the surface analysis are presented.

Experimental studies of collisional plasma shocks and plasma interpenetration via merging supersonic plasma jets

NASA Astrophysics Data System (ADS)

Hsu, S. C.; Moser, A. L.; Merritt, E. C.; Adams, C. S.

2015-11-01

Over the past 4 years on the Plasma Liner Experiment (PLX) at LANL, we have studied obliquely and head-on-merging supersonic plasma jets of an argon/impurity or hydrogen/impurity mixture. The jets are formed/launched by pulsed-power-driven railguns. In successive experimental campaigns, we characterized the (a) evolution of plasma parameters of a single plasma jet as it propagated up to ~ 1 m away from the railgun nozzle, (b) density profiles and 2D morphology of the stagnation layer and oblique shocks that formed between obliquely merging jets, and (c) collisionless interpenetration transitioning to collisional stagnation between head-on-merging jets. Key plasma diagnostics included a fast-framing CCD camera, an 8-chord visible interferometer, a survey spectrometer, and a photodiode array. This talk summarizes the primary results mentioned above, and highlights analyses of inferred post-shock temperatures based on observations of density gradients that we attribute to shock-layer thickness. We also briefly describe more recent PLX experiments on Rayleigh-Taylor-instability evolution with magnetic and viscous effects, and potential future collisionless shock experiments enabled by low-impurity, higher-velocity plasma jets formed by contoured-gap coaxial guns. Supported by DOE Fusion Energy Sciences and LANL LDRD.

Evidence of current free double layer in high density helicon discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ganguli, A.; Sahu, B. B.; Tarey, R. D.

2013-01-15

This paper investigates the formation of double layer (DL) in helicon plasmas. In the experiment, argon plasma production is using the excitation of m = -1 helicon mode with magnetic mirror field with high mirror ratio of {approx}1:1.7. We have specifically used the radio frequency compensated Langmuir probe (LP) to measure the relevant plasma parameters simultaneously so as to investigate the details about the plasma production. The DL, which consists of both warm and bulk populations towards higher potential region and only dense bulk plasmas towards the lower potential region downstream the antenna, is present in the transition region. LPmore » measurements also show an abrupt fall of density along with a potential drop of about 20 V and (e {Delta}V{sub p}/k T{sub e}) Almost-Equal-To 12 within a few cm. The potential drop is equal to the difference of the electron temperatures between the two plasma regions forming the DL, which is present in the plateau region of mirror, unlike in several prior studies on the DL formation in the region of strong gradients in the magnetic field. The DL is strong, current-free, electric double-layer with estimated thickness of about 10 Debye lengths.« less

Experimental Evidence of Kinetic Effects in Indirect-Drive Inertial Confinement Fusion Hohlraums

NASA Astrophysics Data System (ADS)

Shan, L. Q.; Cai, H. B.; Zhang, W. S.; Tang, Q.; Zhang, F.; Song, Z. F.; Bi, B.; Ge, F. J.; Chen, J. B.; Liu, D. X.; Wang, W. W.; Yang, Z. H.; Qi, W.; Tian, C.; Yuan, Z. Q.; Zhang, B.; Yang, L.; Jiao, J. L.; Cui, B.; Zhou, W. M.; Cao, L. F.; Zhou, C. T.; Gu, Y. Q.; Zhang, B. H.; Zhu, S. P.; He, X. T.

2018-05-01

We present the first experimental evidence supported by simulations of kinetic effects launched in the interpenetration layer between the laser-driven hohlraum plasma bubbles and the corona plasma of the compressed pellet at the Shenguang-III prototype laser facility. Solid plastic capsules were coated with carbon-deuterium layers; as the implosion neutron yield is quenched, DD fusion yield from the corona plasma provides a direct measure of the kinetic effects inside the hohlraum. An anomalous large energy spread of the DD neutron signal (˜282 keV ) and anomalous scaling of the neutron yield with the thickness of the carbon-deuterium layers cannot be explained by the hydrodynamic mechanisms. Instead, these results can be attributed to kinetic shocks that arise in the hohlraum-wall-ablator interpenetration region, which result in efficient acceleration of the deuterons (˜28.8 J , 0.45% of the total input laser energy). These studies provide novel insight into the interactions and dynamics of a vacuum hohlraum and near-vacuum hohlraum.

Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition.

PubMed

Jia, Endong; Zhou, Chunlan; Wang, Wenjing

2015-01-01

Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ellipsometry, and the passivation effect of alumina on n-type silicon before and after annealing was measured by microwave photoconductivity decay method. Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated. Capacitance-voltage and conductance-voltage measurements were used to investigate the interface defect density of state (D it) of Al2O3/Si. Finally, Al diffusion P(+) emitter on n-type silicon was passivated by PEALD Al2O3 films. The conclusion is that the condition of lower substrate temperature accelerates the growth of films and that the condition of lower plasma power controls the films' uniformity. The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects. Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muthusubramanian, N.; Zant, H. S. J. van der; Galan, E.

We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al{sub 2}O{sub 3} thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the range of 1 to 10{sup −4} G{sub 0} (1 G{sub 0} = 77 μS), where single-molecule conductances are commonly observed. The insulated devices were usedmore » to measure the conductance of an amphiphilic oligophenylene ethynylene derivative in deionized water.« less

Theoretical investigation of discharge parameters in magnetized radio frequency excited CO2 lasers

NASA Astrophysics Data System (ADS)

Tavassoli, H.; Sohbatzadeh, F.; Latifi, H.

2003-06-01

In the present paper the magnetic field effects on discharge parameters in rf excited CO2 lasers are calculated. A rf generated plasma imbedded in an external, constant, and homogeneous magnetic field is considered. The continuity equation is used to derive the electron density. Quasineutrality condition and ambipolar diffusion are used. Electron attachment coefficient is neglected. Local electric field, local electron density, and thickness of charge layers are derived as a function of distance from the electrodes and magnetic field. The thickness of charge layers in the presence of magnetic field is always smaller than one without the magnetic field. When the magnetic field increases, the electron density increases in all regions of discharge, and the electric field reduces in the charge layers but increases in the middle part of discharge.

Effect of ring-shaped SiO2 current blocking layer thickness on the external quantum efficiency of high power light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Liu, Mengling; Hu, Hongpo; Gao, Yilin; Liu, Xingtong

2017-12-01

A ring-shaped SiO2 CBL underneath the p-electrode was employed to enhance current spreading of GaN-based light-emitting diodes (LEDs). Effects of ring-shaped SiO2 current blocking layer (CBL) thickness on optical and electrical characteristics of high power LEDs were investigated. A 190-nm-thick ring-shaped SiO2 CBL with inclined sidewalls was obtained using a combination of a thermally reflowed photoresist technique and an inductively coupled plasma (ICP) etching process, allowing for the deposition of conformal indium tin oxide (ITO) transparent conductive layer on sidewalls of ring-shaped SiO2 CBL. It was indicated that the external quantum efficiency (EQE) of high power LEDs increased with increasing thickness of ring-shaped SiO2 CBL. The EQE of high power LED with 190-nm-thick ring-shaped SiO2 CBL was 12.7% higher than that of high power LED without SiO2 CBL. Simulations performed with commercial SimuLED software package showed that the ring-shaped SiO2 CBL could significantly alleviate current crowding around p-electrode, resulting in enhanced current spreading over the entire high power LED structure.

Automated Plasma Spray (APS) process feasibility study: Plasma spray process development and evaluation

NASA Technical Reports Server (NTRS)

Fetheroff, C. W.; Derkacs, T.; Matay, I. M.

1979-01-01

An automated plasma spray (APS) process was developed to apply two layer (NiCrAlY and ZrO2-12Y2O3) thermal-barrier coatings to aircraft gas turbine engine blade airfoils. The APS process hardware consists of four subsystems: a mechanical blade positioner incorporating two interlaced six-degree-of-freedom assemblies; a noncoherent optical metrology subsystem; a microprocessor-based adaptive system controller; and commercial plasma spray equipment. Over fifty JT9D first stage turbine blades specimens were coated with the APS process in preliminary checkout and evaluation studies. The best of the preliminary specimens achieved an overall coating thickness uniformity of + or - 53 micrometers, much better than is achievable manually. Factors limiting this performance were identified and process modifications were initiated accordingly. Comparative evaluations of coating thickness uniformity for manually sprayed and APS coated specimens were initiated. One of the preliminary evaluation specimens was subjected to a torch test and metallographic evaluation.

Plasma surface tantalum alloying on titanium and its corrosion behavior in sulfuric acid and hydrochloric acid

NASA Astrophysics Data System (ADS)

Wei, D. B.; Chen, X. H.; Zhang, P. Z.; Ding, F.; Li, F. K.; Yao, Z. J.

2018-05-01

An anti-corrosion Ti-Ta alloy coating was prepared on pure titanium surface by double glow plasma surface alloying technology. Electrochemical corrosion test was applied to test the anti-corrosion property of Ti-Ta alloy layer. The microstructure and the phase composition of Ti-Ta alloy coating were detected before and after corrosion process by means of scanning electron microscope (SEM), X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). The results showed that the Ta-Ti alloy layer has a thickness of about 13-15 μm, which is very dense without obvious defects such as pores or cracks. The alloy layer is composed mainly of β-Ta and α-Ti. The Ta alloy layer improves the anti-corrosion property of pure titanium. A denser and more durable TiO2 formed on the surface Ta-Ti alloy layer after immersing in strong corrosive media may account for the excellent corrosion resistant.

Tracking of buried layers during plasma-assisted femtosecond laser drilling of compound targets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhvaniya, I. A., E-mail: irina.zhvaniya@physics.msu.ru; Garmatina, A. A.; Makarov, I. A.

It was shown that drilling of multi-layered target placed in the air by tightly focused femtosecond laser radiation with high fluence (up to 1000 J/cm{sup 2}) can be monitored online using plasma-induced X-ray emission and second harmonic of incident laser radiation. The technique based on X-rays registration is appeared to be more flexible than the method based on detection of second harmonic since its accuracy depends crucially on the target type. We demonstrated that the X-ray signal clearly indicates the transition from one layer to another during the microdrilling of targets consisting of 2–4 layers of titanium foil when a lasermore » beam is focused beneath the target surface at a depth comparable to the layer thickness. The diagnostics of microchannel production in the chicken eggshell was performed for the first time. It was found that the presence of albumen beneath the shell accounts for longtime generation of X-ray pulses.« less

Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors

DOEpatents

Ruffner, Judith Alison

1999-01-01

A method for coating (flat or non-flat) optical substrates with high-reflectivity multi-layer coatings for use at Deep Ultra-Violet ("DUV") and Extreme Ultra-Violet ("EUV") wavelengths. The method results in a product with minimum feature sizes of less than 0.10-.mu.m for the shortest wavelength (13.4-nm). The present invention employs a computer-based modeling and deposition method to enable lateral and vertical thickness control by scanning the position of the substrate with respect to the sputter target during deposition. The thickness profile of the sputter targets is modeled before deposition and then an appropriate scanning algorithm is implemented to produce any desired, radially-symmetric thickness profile. The present invention offers the ability to predict and achieve a wide range of thickness profiles on flat or figured substrates, i.e., account for 1/R.sup.2 factor in a model, and the ability to predict and accommodate changes in deposition rate as a result of plasma geometry, i.e., over figured substrates.

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Tang, Fengzai; Lee, Kean B.; Guiney, Ivor; Frentrup, Martin; Barnard, Jonathan S.; Divitini, Giorgio; Zaidi, Zaffar H.; Martin, Tomas L.; Bagot, Paul A.; Moody, Michael P.; Humphreys, Colin J.; Houston, Peter A.; Oliver, Rachel A.; Wallis, David J.

2018-01-01

We investigate the impact of a fluorine plasma treatment used to obtain enhancement-mode operation on the structure and chemistry at the nanometer and atomic scales of an InAlN/GaN field effect transistor. The fluorine plasma treatment is successful in that enhancement mode operation is achieved with a +2.8 V threshold voltage. However, the InAlN barrier layers are observed to have been damaged by the fluorine treatment with their thickness being reduced by up to 50%. The treatment also led to oxygen incorporation within the InAlN barrier layers. Furthermore, even in the as-grown structure, Ga was unintentionally incorporated during the growth of the InAlN barrier. The impact of both the reduced barrier thickness and the incorporated Ga within the barrier on the transistor properties has been evaluated theoretically and compared to the experimentally determined two-dimensional electron gas density and threshold voltage of the transistor. For devices without fluorine treatment, the two-dimensional electron gas density is better predicted if the quaternary nature of the barrier is taken into account. For the fluorine treated device, not only the changes to the barrier layer thickness and composition, but also the fluorine doping needs to be considered to predict device performance. These studies reveal the factors influencing the performance of these specific transistor structures and highlight the strengths of the applied nanoscale characterisation techniques in revealing information relevant to device performance.

Investigation of uranium plasma emission from 1050 to 6000 A

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mack, J.M. Jr.

1977-12-01

Absolute emission coefficient measurements on arc-generated uranium plasmas in local thermodynamic equilibrium are described for a wavelength bandwidth of 1050 to 6000A. Low- and high-pressure arcs were investigated for their emission properties, characteristic temperatures and uranium partial pressures. Temperatures from 5500 to 8000 K and uranium partial pressures from 0.001 to 0.01 atm were found at the arc centerline. The new emission data are compared with other similar experimental results and to existing theoretical calculations. The effects of cold-layer UF/sub 6/ photoabsorption on uranium plasma emission characteristics are established for UF/sub 6/ molecular densities ranging from 1.0 x 10/sup 16/more » to 1.0 x 10/sup 17/ cm/sup -3/ and layer thickness from 1.0 to 5.0 cm.« less

Dependence of the source performance on plasma parameters at the BATMAN test facility

NASA Astrophysics Data System (ADS)

Wimmer, C.; Fantz, U.

2015-04-01

The investigation of the dependence of the source performance (high jH-, low je) for optimum Cs conditions on the plasma parameters at the BATMAN (Bavarian Test MAchine for Negative hydrogen ions) test facility is desirable in order to find key parameters for the operation of the source as well as to deepen the physical understanding. The most relevant source physics takes place in the extended boundary layer, which is the plasma layer with a thickness of several cm in front of the plasma grid: the production of H-, its transport through the plasma and its extraction, inevitably accompanied by the co-extraction of electrons. Hence, a link of the source performance with the plasma parameters in the extended boundary layer is expected. In order to characterize electron and negative hydrogen ion fluxes in the extended boundary layer, Cavity Ring-Down Spectroscopy and Langmuir probes have been applied for the measurement of the H- density and the determination of the plasma density, the plasma potential and the electron temperature, respectively. The plasma potential is of particular importance as it determines the sheath potential profile at the plasma grid: depending on the plasma grid bias relative to the plasma potential, a transition in the plasma sheath from an electron repelling to an electron attracting sheath takes place, influencing strongly the electron fraction of the bias current and thus the amount of co-extracted electrons. Dependencies of the source performance on the determined plasma parameters are presented for the comparison of two source pressures (0.6 Pa, 0.45 Pa) in hydrogen operation. The higher source pressure of 0.6 Pa is a standard point of operation at BATMAN with external magnets, whereas the lower pressure of 0.45 Pa is closer to the ITER requirements (p ≤ 0.3 Pa).

Evolution of a Native Oxide Layer at the a-Si:H/c-Si Interface and Its Influence on a Silicon Heterojunction Solar Cell.

PubMed

Liu, Wenzhu; Meng, Fanying; Zhang, Xiaoyu; Liu, Zhengxin

2015-12-09

The interface microstructure of a silicon heterojunction (SHJ) solar cell was investigated. We found an ultrathin native oxide layer (NOL) with a thickness of several angstroms was formed on the crystalline silicon (c-Si) surface in a very short time (∼30 s) after being etched by HF solution. Although the NOL had a loose structure with defects that are detrimental for surface passivation, it acted as a barrier to restrain the epitaxial growth of hydrogenated amorphous silicon (a-Si:H) during the plasma-enhanced chemical vapor deposition (PECVD). The microstructure change of the NOL during the PECVD deposition of a-Si:H layers with different conditions and under different H2 plasma treatments were systemically investigated in detail. When a brief H2 plasma was applied to treat the a-Si:H layer after the PECVD deposition, interstitial oxygen and small-size SiO2 precipitates were transformed to hydrogenated amorphous silicon suboxide alloy (a-SiO(x):H, x ∼ 1.5). In the meantime, the interface defect density was reduced by about 50%, and the parameters of the SHJ solar cell were improved due to the post H2 plasma treatment.

Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy

NASA Astrophysics Data System (ADS)

Egorov, Konstantin V.; Lebedinskii, Yury Yu.; Soloviev, Anatoly A.; Chouprik, Anastasia A.; Azarov, Alexander Yu.; Markeev, Andrey M.

2017-10-01

The clear substrate-dependent growth and delayed film continuity are essential challenges of Ru atomic layer deposition (ALD) demanding adequate and versatile approaches for their study. Here, we report on the application of in situ Angle Resolved X-ray Phototelectron Spectroscopy (ARXPS) for investigation of initial and steady-state ALD growth of Ru using Ru(EtCp)2 and O2 as precursors. Using ARXPS surface analysis technique we determine such parameters of Ru ALD initial growth as incubation period, fractional coverage and the thickness of islands/film depending on the substrate chemical state, governed by the presence/absence of NH3/Ar plasma pretreatment. It was demonstrated that NH3/Ar plasma pretreatment allows to obtain the lowest incubation period (∼7 ALD cycles) resulting in a continuous ultrathin (∼20 Å) and smooth Ru films after 70 ALD cycles. In situ XPS at UHV was used at steady state Ru growth for analysis of half-cycle reactions that revealed formation of RuOx (x ≈ 2) layer with thickness of ∼8 Å after O2 pulse (first half-cycle). It was also shown that oxygen of RuOx layer combusts Ru(EtCp)2 ligands in the second half-cycle reaction and the observed Ru growth of ∼0.34 Å per cycle is in a good agreement with the amount of oxygen in the RuOx layer.

Preparation of Copper and Chromium Alloyed Layers on Pure Titanium by Plasma Surface Alloying Technology

NASA Astrophysics Data System (ADS)

He, Xiaojing; Li, Meng; Wang, Huizhen; Zhang, Xiangyu; Tang, Bin

2015-05-01

Cu-Cr alloyed layers with different Cu and Cr contents on pure titanium were obtained by means of plasma surface alloying technology. The microstructure, chemical composition and phase composition of Cu-Cr alloyed layers were analyzed by scanning electron microscopy (SEM), energy dispersive spectrometer (EDS) and X-ray diffraction (XRD), respectively. The experimental results demonstrate that the alloyed layers are bonded strongly to pure titanium substrate and consist of unbound Ti, CuTi, Cu3Ti, CuTi3 and Cr2Ti. The thickness of Cu5Cr5 and Cu7Cr3 alloyed layer are about 18 μm and 28 μm, respectively. The antibacterial properties against gram-negative Escherichia coli (E.coli, ATCC10536) and gram-positive Staphylococcus aureus (S. aureus, ATCC6538) of untreated pure titanium and Cu-Cr alloyed specimen were investigated by live/dead fluorescence staining method. The study shows that Cu-Cr alloyed layers exhibit excellent antibacterial activities against both E.coli and S.aureus within 24 h, which may be attributed to the formation of Cu-containing phases.

Studies of the Cr-CrN coating characteristics formed by means of the magnetron sputtering method from bulk target

NASA Astrophysics Data System (ADS)

Kachalin, G. V.; Mednikov, A. F.; Tkhabisimov, A. B.; Sidorov, S. V.

2017-07-01

The paper presents the study’s results of ion-plasma chromium based coating characteristics produced on blade steel samples 12Kh13 and EI961 by means of the magnetron sputtering method from the bulk “hot” target. A set of metallographic studies and erosion tests of coatings were carried out using the research equipment URI (unique research installation) “Hydroshock rig Erosion-M” of NRU “MPEI”. Cr-CrN based coatings have a layered structure; thickness of intermediate Cr layers ranges from 0.7 to 1.7 μm, thickness of nitride layers CrN ranges from 1.5 to 4 μm, while the overall coating thickness is 17.0-21.5 μm coating microhardness is 1830-1880 HV0.05. The resulting coatings are found to increase 1.5 times the incubation period duration of erosion wear for steels 12Kh13 and EI961; they reduce the maximum erosion rate 1.3 times, and the steady erosion rate - 1.5 times.

Investigation of PDMS based bi-layer elasticity via interpretation of apparent Young's modulus.

PubMed

Sarrazin, Baptiste; Brossard, Rémy; Guenoun, Patrick; Malloggi, Florent

2016-02-21

As the need of new methods for the investigation of thin films on various kinds of substrates becomes greater, a novel approach based on AFM nanoindentation is explored. Substrates of polydimethylsiloxane (PDMS) coated by a layer of hard material are probed with an AFM tip in order to obtain the force profile as a function of the indentation. The equivalent elasticity of those composite systems is interpreted using a new numerical approach, the Coated Half-Space Indentation Model of Elastic Response (CHIMER), in order to extract the thicknesses of the upper layer. Two kinds of coating are investigated. First, chitosan films of known thicknesses between 30 and 200 nm were probed in order to test the model. A second type of samples is produced by oxygen plasma oxidation of the PDMS substrate, which results in the growth of a relatively homogeneous oxide layer. The local nature of this protocol enables measurements at long oxidation time, where the apparition of cracks prevents other kinds of measurements.

In-situ real time measurements of net erosion rates of copper during hydrogen plasma exposure

NASA Astrophysics Data System (ADS)

Kesler, Leigh; Wright, Graham; Peterson, Ethan; Whyte, Dennis

2013-10-01

In order to properly understand the dynamics of net erosion/deposition in fusion reactors, such as tokamaks, a diagnostic measuring the real time rates of net erosion/deposition during plasma exposure is necessary. The DIONISOS experiment produces real time measurements of net erosion/deposition by using Rutherford backscattering spectroscopy (RBS) ion beam analysis simultaneously with plasma exposure from a helicon plasma source. This in-situ method improves on ex-situ weight loss measurements by allowing measurement of possible synergistic effects of high ion implantation rates and net erosion rate and by giving a real time response to changes in plasma parameters. Previous work has validated this new technique for measuring copper (Cu) erosion from helium (He) plasma ion bombardment. This technique is now extended to measure copper erosion due to deuterium and hydrogen plasma ion exposure. Targets used were a 1.5 μm Cu layer on an aluminum substrate. Cu layer thickness is tracked in real time using 1.2 MeV proton RBS. Measured erosion rates will be compared to results from literature and He erosion rates. Supported by US DoE award DE-SC00-02060.

Multichannel tunable filter properties of 1D magnetized ternary plasma photonic crystal in the presence of evanescent wave

NASA Astrophysics Data System (ADS)

Awasthi, Suneet Kumar; Panda, Ranjita; Shiveshwari, Laxmi

2017-07-01

The multichannel tunable filter properties of one-dimensional ternary plasma photonic crystal composed of magnetized plasma and lossless dielectric have been theoretically investigated using transfer matrix method in the microwave region. The proposed filters possess 2N - 2 comb-like sharp resonant peaks also called transmission channels for N > 1 in transmission spectra in the absence and presence of an external magnetic field. Due to the coupling between evanescent waves and propagating modes in plasma and dielectric layers, respectively, 2N - 2 transmission channels are found without the addition of any defect, enabling the structure to work as a multichannel filter. Next, the filter properties can be made tunable by the application of an external magnetic field, i.e., channel frequency can either be red or blue shifted depending upon the orientation of an external magnetic field. The number of channels and their positions can also be modulated by changing the number of periods (N) and the incident angle (θo), respectively, for both transverse electric (TE) and transverse magnetic (TM) modes besides other parameters such as plasma collision frequency, thickness of the plasma layer, plasma frequency, etc.

Quantitative fabrication, performance optimization and comparison of PEG and zwitterionic polymer antifouling coatings.

PubMed

Xing, Cheng-Mei; Meng, Fan-Ning; Quan, Miao; Ding, Kai; Dang, Yuan; Gong, Yong-Kuan

2017-09-01

A versatile fabrication and performance optimization strategy of PEG and zwitterionic polymer coatings is developed on the sensor chip of surface plasma resonance (SPR) instrument. A random copolymer bearing phosphorylcholine zwitterion and active ester side chains (PMEN) and carboxylic PEG coatings with comparable thicknesses were deposited on SPR sensor chips via amidation coupling on the precoated polydopamine (PDA) intermediate layer. The PMEN coating showed much stronger resistance to bovine serum albumin (BSA) adsorption than PEG coating at very thin thickness (∼1nm). However, the BSA resistant efficacy of PEG coating could exceed that of PMEN due to stronger steric repelling effect when the thickness increased to 1.5∼3.3nm. Interestingly, both the PEG and PMEN thick coatings (≈3.6nm) showed ultralow fouling by BSA and bovine plasma fibrinogen (Fg). Moreover, changes in the PEG end group from -OH to -COOH, protein adsorption amount could increase by 10-fold. Importantly, the optimized PMEN and PEG-OH coatings were easily duplicated on other substrates due to universal adhesion of the PDA layer, showed excellent resistance to platelet, bacteria and proteins, and no significant difference in the antifouling performances was observed. These detailed results can explain the reported discrepancy in performances between PEG and zwitterionic polymer coatings by thickness. This facile and substrate-independent coating strategy may benefit the design and manufacture of advanced antifouling biomedical devices and long circulating nanocarriers. Prevention of biofouling is one of the biggest challenges for all biomedical applications. However, it is very difficult to fabricate a highly hydrophilic antifouling coating on inert materials or large devices. In this study, PEG and zwitterion polymers, the most widely investigated polymers with best antifouling performance, are conveniently immobilized on different kinds of substrates from their aqueous solutions by precoating a polydopamine intermediate layer as the universal adhesive and readily re-modifiable surface. Importantly, the coating fabrication and antifouling performance can be monitored and optimized quantitatively by a surface plasma resonance (SPR) system. More significantly, the SPR on-line optimized coatings were successfully duplicated off-line on other substrates, and supported by their excellent antifouling properties. Copyright © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Atmospheric Plasma Spraying Low-Temperature Cathode Materials for Solid Oxide Fuel Cells

NASA Astrophysics Data System (ADS)

Harris, J.; Kesler, O.

2010-01-01

Atmospheric plasma spraying (APS) is attractive for manufacturing solid oxide fuel cells (SOFCs) because it allows functional layers to be built rapidly with controlled microstructures. The technique allows SOFCs that operate at low temperatures (500-700 °C) to be fabricated by spraying directly onto robust and inexpensive metallic supports. However, standard cathode materials used in commercial SOFCs exhibit high polarization resistances at low operating temperatures. Therefore, alternative cathode materials with high performance at low temperatures are essential to facilitate the use of metallic supports. Coatings of lanthanum strontium cobalt ferrite (LSCF) were fabricated on steel substrates using axial-injection APS. The thickness and microstructure of the coating layers were evaluated, and x-ray diffraction analysis was performed on the coatings to detect material decomposition and the formation of undesired phases in the plasma. These results determined the envelope of plasma spray parameters in which coatings of LSCF can be manufactured, and the range of conditions in which composite cathode coatings could potentially be manufactured.

Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well

NASA Astrophysics Data System (ADS)

Izumi, Shouichiro; Minami, Masaki; Kamada, Michiru; Tatsumi, Tetsuya; Yamaguchi, Atsushi A.; Ishikawa, Kenji; Hori, Masaru; Tomiya, Shigetaka

2013-08-01

Plasma-induced damage (PID) due to Cl2/SiCl4/Ar plasma etching of the GaN capping layer (CAP)/GaInN single quantum well (SQW)/GaN structure was investigated by conventional photoluminescence (PL), transmission electron microscopy (TEM), and time-resolved and temperature-dependent photoluminescence (TRPL). SQW PL intensity remained constant initially, although plasma etching of the CAP layer proceeded, but when the etching thickness reached a certain amount (˜60 nm above the SQW), PL intensity started to decrease sharply. On the other hand, TEM observations show that the physical damage (structural damage) was limited to the topmost surface region. These findings can be explained by the results of TRPL studies, which revealed that there exist two different causes of PID. One is an increase in the number of nonradiative recombination centers, which mainly affects the PL intensity. The other is an increase in the quantum level fluctuation owing mainly to physical damage.

Thermal barrier coating life-prediction model development

NASA Technical Reports Server (NTRS)

Strangman, T. E.; Neumann, J.

1985-01-01

Life predictions are made for two types of strain-tolerant and oxidation-resistant Thermal Barrier Coating (TBC) systems produced by commercial coating suppliers to the gas turbine industry. The plasma-sprayed TBC system, composed of a low-pressure plasma spray (LPPS) applied oxidation-resistant NiCrAlY bond coating and an air-plasma-sprayed yttria (8 percent) partially stabilized zirconia insulative layer, is applied by both Chromalloy and Klock. The second type of TBC is applied by the electron-beam/physical vapor deposition process by Temescal. Thermomechanical and thermochemical testing of the program TBCs is in progress. A number of the former tests has been completed. Fracture mechanics data for the Chromalloy plasma-sprayed TBC system indicate that the cohesive toughness of the zirconia layer is increased by thermal cycling and reduced by high temperature exposure at 1150 C. Eddy current technology feasibility has been established with respect to nondestructively measuring zirconia layer thickness of a TBC system. High pressure turbine blades have been coated with program TBC systems for a piggyback test in a TFE731-5 turbofan factory engine test. Data from this test will be used to validate the TBC life models.

Dust particles in controlled fusion devices: morphology, observations in the plasma and influence on the plasma performance

NASA Astrophysics Data System (ADS)

Rubel, M.; Cecconello, M.; Malmberg, J. A.; Sergienko, G.; Biel, W.; Drake, J. R.; Hedqvist, A.; Huber, A.; Philipps, V.

2001-08-01

The formation and release of particle agglomerates, i.e. debris and dusty objects, from plasma facing components and the impact of such materials on plasma operation in controlled fusion devices has been studied in the Extrap T2 reversed field pinch and the TEXTOR tokamak. Several plasma diagnostic techniques, camera observations and surface analysis methods were applied for in situ and ex situ investigation. The results are discussed in terms of processes that are decisive for dust transfer: localized power deposition connected with wall locked modes causing emission of carbon granules, brittle destruction of graphite and detachment of thick flaking co-deposited layers. The consequences for large next step devices are also addressed.

Topography preserved microwave plasma etching for top-down layer engineering in MoS2 and other van der Waals materials.

PubMed

Varghese, Abin; Sharma, Chithra H; Thalakulam, Madhu

2017-03-17

A generic and universal layer engineering strategy for van der Waals (vW) materials, scalable and compatible with the current semiconductor technology, is of paramount importance in realizing all-two-dimensional logic circuits and to move beyond the silicon scaling limit. In this letter, we demonstrate a scalable and highly controllable microwave plasma based layer engineering strategy for MoS 2 and other vW materials. Using this technique we etch MoS 2 flakes layer-by-layer starting from an arbitrary thickness and area down to the mono- or the few-layer limit. From Raman spectroscopy, atomic force microscopy, photoluminescence spectroscopy, scanning electron microscopy and transmission electron microscopy, we confirm that the structural and morphological properties of the material have not been compromised. The process preserves the pre-etch layer topography and yields a smooth and pristine-like surface. We explore the electrical properties utilising a field effect transistor geometry and find that the mobility values of our samples are comparable to those of the pristine ones. The layer removal does not involve any reactive gasses or chemical reactions and relies on breaking the weak inter-layer vW interaction making it a generic technique for a wide spectrum of layered materials and heterostructures. We demonstrate the wide applicability of the technique by extending it to other systems such as graphene, h-BN and WSe 2 . In addition, using microwave plasma in combination with standard lithography, we illustrate a lateral patterning scheme making this process a potential candidate for large scale device fabrication in addition to layer engineering.

Surface Passivation of ZrO2 Artificial Dentures by Magnetized Coaxial Plasma deposition

NASA Astrophysics Data System (ADS)

Arai, Soya; Kurumi, Satoshi; Matsuda, Ken-Ichi; Suzuki, Kaoru; Hara, Katsuya; Kato, Tatsuya; Asai, Tomohiko; Hirose, Hideharu; Masutani, Shigeyuki; Nihon University Team

2015-09-01

Recent growth and fabrication technologies for functional materials have been greatly contributed to drastic development of oral surgery field. Zirconia based ceramics is expected to utilize artificial dentures because these ceramics have good biocompatibility, high hardness and aesthetic attractively. However, to apply these ceramics to artificial dentures, this denture is removed from a dental plate because of weakly bond. For improving this problem, synthesis an Al passivation-layer on the ceramics for bonding with these dental items is suitable. In order to deposit the passivation layer, we focused on a magnetized coaxial plasma deposition (MCPD). The greatest characteristic of MCPD is that high-melting point metal can be deposited on various substrates. Additionally, adhesion force between substrate and films deposited by the MCPD is superior to it of general deposition methods. In this study, we have reported on the growth techniques of Al films on ZrO2 for contributing to oral surgery by the MCPD. Surface of deposited films shows there were some droplets and thickness of it is about 200 nm. Thickness is increased to 500 nm with increasing applied voltage.

193-nm multilayer imaging systems

NASA Astrophysics Data System (ADS)

Meador, James D.; Holmes, Doug; DiMenna, William; Nagatkina, Mariya I.; Rich, Michael D.; Flaim, Tony D.; Bennett, Randy; Kobayashi, Ichiro

2003-06-01

This paper highlights the performance of new materials that have been developed for use in 193-nm trilayer microlithography. The products are embedded etch masking layers (EMLs) and bottom antireflective coatings (BARCs). Both coatings are spin applied from organic solvent(s) and then thermoset during a hot plate bake. The EMLs (middle layers) are imaging compatible with JSR, Sumitomo, and TOK 193-nm photoresists. Best-case trilayer film stacks have given 100-nm dense and semi-dense L/S. Plasma etching, selectivities and solution compatibility performance of the EMLs meet or exceed proposed product targets. In addition, the EMLs exhibit both solution and plasma etching properties that should lead to successful rework processes for photoresists. The multiplayer BARCs offer good thick film coating quality and contribute to excellent images when used in trilayer applications. Combining the EMLs, which are nearly optically transparent (k=0.04) at 193-nm, with the new trilayer BARCs results in outstanding Prolith simulated reflectance control. In one modeling example, reflectance is a flat line at 0.5% on five different substrates for BARC thicknesses between 300 and 700-nm.

Synthesis of graphene by cobalt-catalyzed decomposition of methane in plasma-enhanced CVD: Optimization of experimental parameters with Taguchi method

NASA Astrophysics Data System (ADS)

Mehedi, H.-A.; Baudrillart, B.; Alloyeau, D.; Mouhoub, O.; Ricolleau, C.; Pham, V. D.; Chacon, C.; Gicquel, A.; Lagoute, J.; Farhat, S.

2016-08-01

This article describes the significant roles of process parameters in the deposition of graphene films via cobalt-catalyzed decomposition of methane diluted in hydrogen using plasma-enhanced chemical vapor deposition (PECVD). The influence of growth temperature (700-850 °C), molar concentration of methane (2%-20%), growth time (30-90 s), and microwave power (300-400 W) on graphene thickness and defect density is investigated using Taguchi method which enables reaching the optimal parameter settings by performing reduced number of experiments. Growth temperature is found to be the most influential parameter in minimizing the number of graphene layers, whereas microwave power has the second largest effect on crystalline quality and minor role on thickness of graphene films. The structural properties of PECVD graphene obtained with optimized synthesis conditions are investigated with Raman spectroscopy and corroborated with atomic-scale characterization performed by high-resolution transmission electron microscopy and scanning tunneling microscopy, which reveals formation of continuous film consisting of 2-7 high quality graphene layers.

Synthesis of graphene by cobalt-catalyzed decomposition of methane in plasma-enhanced CVD: Optimization of experimental parameters with Taguchi method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mehedi, H.-A.; Baudrillart, B.; Gicquel, A.

2016-08-14

This article describes the significant roles of process parameters in the deposition of graphene films via cobalt-catalyzed decomposition of methane diluted in hydrogen using plasma-enhanced chemical vapor deposition (PECVD). The influence of growth temperature (700–850 °C), molar concentration of methane (2%–20%), growth time (30–90 s), and microwave power (300–400 W) on graphene thickness and defect density is investigated using Taguchi method which enables reaching the optimal parameter settings by performing reduced number of experiments. Growth temperature is found to be the most influential parameter in minimizing the number of graphene layers, whereas microwave power has the second largest effect on crystalline qualitymore » and minor role on thickness of graphene films. The structural properties of PECVD graphene obtained with optimized synthesis conditions are investigated with Raman spectroscopy and corroborated with atomic-scale characterization performed by high-resolution transmission electron microscopy and scanning tunneling microscopy, which reveals formation of continuous film consisting of 2–7 high quality graphene layers.« less

Effect of oxygen partial pressure on oxidation of Mo-metal

NASA Astrophysics Data System (ADS)

Sharma, Rabindar Kumar; Kumar, Prabhat; Singh, Megha; Gopal, Pawar; Reddy, G. B.

2018-05-01

This report explains the effect of oxygen partial pressure (PO2 ) on oxidation of Mo-metal in oxygen plasma. XRD results indulge that oxide layers formed on Mo-surfaces at different oxygen partial pressures have two different oxide phases (i.e. orthorhombic MoO3 and monoclinic Mo8O23). Intense XRD peaks at high pressure (i.e. 2.0×10-1 Torr) points out the formation of thick oxide layer on Mo-surface due to presence of large oxygen species in chamber and less oxide volatilization. Whereas, at low PO2 (6.5×10-2 and 7.5×10-2 Torr.) the reduced peak strength is owing to high oxide volatilization rate. SEM micrographs and thickness measurements also support XRD results and confirm that the optimum -2value of PO2 to deposited thicker and uniform oxide film on glass substrate is 7.5×10-2 Torr through plasma assistedoxidation process. Further to study the compositional properties, EDX of the sample M2 (the best sample) is carried out, which confirms that the stoichiometric ratio is less than 3 (i.e. 2.88). Less stoichiometric ratio again confirms the presence of sub oxides in oxide layers on Mo metal as evidenced by XRD results. All the observed results are well in consonance with each other.

Development of a Buried Layer Platform at the OMEGA laser to Study Coronal (nonLTE) Plasmas

NASA Astrophysics Data System (ADS)

Schneider, M. B.; Marley, E. V.; Brown, G. V.; Heeter, R. F.; Barrios, M. A.; Foord, M. E.; Gray, W. J.; Jarrott, L. C.; Liedahl, D. A.; Mauche, C. W.; Widmann, K.

2016-10-01

A buried layer platform is being developed at the OMEGA laser to study the radiative properties of coronal (non-LTE) plasmas (ne few 1021 /cm3 , Te 1 - 2 keV) of mid to high Z materials. In the current study, the target was a 200 μm square with equal atomic mixes of gold/iron/vanadium in the center of a 600 μm diameter, 10 μm thick beryllium tamper. The thickness of the buried layer was either 1200 A or 1800 A. Lasers heat the target from both sides for up to 4 ns. The size of the microdot vs time was measured with x-ray imaging (face-on) and x- ray spectroscopy (side-on). The radiant x-ray power was measured with a low-resolution absolutely calibrated x-ray spectrometer (DANTE). The temperature was measured from the Fe and V helium-beta complexes. The use of these measurements to deduce emissivity of the target in the 2-3 keV x-ray range and improvements for future experiments are discussed. This work was performed under the auspices of the U.S. Department of Energy by LLNS, LLC, under Contract No. DE-AC52-07NA27344.

Transient, Small-Scale Field-Aligned Currents in the Plasma Sheet Boundary Layer During Storm Time Substorms

NASA Technical Reports Server (NTRS)

Nakamura, R.; Sergeev, V. A.; Baumjohann, W.; Plaschke, F.; Magnes, W.; Fischer, D.; Varsani, A.; Schmid, D.; Nakamura, T. K. M.; Russell, C. T.;

Transient, small-scale field-aligned currents in the plasma sheet boundary layer during storm time substorms.

PubMed

Nakamura, R; Sergeev, V A; Baumjohann, W; Plaschke, F; Magnes, W; Fischer, D; Varsani, A; Schmid, D; Nakamura, T K M; Russell, C T; Strangeway, R J; Leinweber, H K; Le, G; Bromund, K R; Pollock, C J; Giles, B L; Dorelli, J C; Gershman, D J; Paterson, W; Avanov, L A; Fuselier, S A; Genestreti, K; Burch, J L; Torbert, R B; Chutter, M; Argall, M R; Anderson, B J; Lindqvist, P-A; Marklund, G T; Khotyaintsev, Y V; Mauk, B H; Cohen, I J; Baker, D N; Jaynes, A N; Ergun, R E; Singer, H J; Slavin, J A; Kepko, E L; Moore, T E; Lavraud, B; Coffey, V; Saito, Y

2016-05-28

We report on field-aligned current observations by the four Magnetospheric Multiscale (MMS) spacecraft near the plasma sheet boundary layer (PSBL) during two major substorms on 23 June 2015. Small-scale field-aligned currents were found embedded in fluctuating PSBL flux tubes near the separatrix region. We resolve, for the first time, short-lived earthward (downward) intense field-aligned current sheets with thicknesses of a few tens of kilometers, which are well below the ion scale, on flux tubes moving equatorward/earthward during outward plasma sheet expansion. They coincide with upward field-aligned electron beams with energies of a few hundred eV. These electrons are most likely due to acceleration associated with a reconnection jet or high-energy ion beam-produced disturbances. The observations highlight coupling of multiscale processes in PSBL as a consequence of magnetotail reconnection.

Plasma-based actuators for turbulent boundary layer control in transonic flow

NASA Astrophysics Data System (ADS)

Budovsky, A. D.; Polivanov, P. A.; Vishnyakov, O. I.; Sidorenko, A. A.

2017-10-01

The study is devoted to development of methods for active control of flow structure typical for the aircraft wings in transonic flow with turbulent boundary layer. The control strategy accepted in the study was based on using of the effects of plasma discharges interaction with miniature geometrical obstacles of various shapes. The conceptions were studied computationally using 3D RANS, URANS approaches. The results of the computations have shown that energy deposition can significantly change the flow pattern over the obstacles increasing their influence on the flow in boundary layer region. Namely, one of the most interesting and promising data were obtained for actuators basing on combination of vertical wedge with asymmetrical plasma discharge. The wedge considered is aligned with the local streamlines and protruding in the flow by 0.4-0.8 of local boundary layer thickness. The actuator produces negligible distortion of the flow at the absence of energy deposition. Energy deposition along the one side of the wedge results in longitudinal vortex formation in the wake of the actuator providing momentum exchange in the boundary layer. The actuator was manufactured and tested in wind tunnel experiments at Mach number 1.5 using the model of flat plate. The experimental data obtained by PIV proved the availability of the actuator.

Modelling the power deposition into a spherical tokamak fusion power plant

NASA Astrophysics Data System (ADS)

Windsor, C. G.; Morgan, J. G.; Buxton, P. F.; Costley, A. E.; Smith, G. D. W.; Sykes, A.

2017-03-01

Numerical studies have been made to improve the performance of the central column of a superconducting spherical tokamak fusion pilot plant. The assumed neutron shield includes concentric layers of tungsten carbide and water. The relative thickness of the water layers was varied and a minimum power deposition was found at about 17% of water. It was found advantageous to have an approximately 1.7 times thicker water layer next to the core and a similarly thinner layer next to the plasma. The use of tungsten boride instead of tungsten carbide was shown to make an improvement especially if placed close to the central superconducting core, the inner layer alone reducing the power deposition by 29%. Engineering features such as a central steel tie-bar, an insulating thermal vacuum gap, a wall gap next to the plasma and knowledge of the vertical energy distribution are essential to a successful design and their effects on the power deposition are shown in an appendix. The results have been fitted to model distributions and incorporated into the Tokamak Energy System Code, which can then give predictions of the power deposition as a function of other parameters such as the plasma major radius and the maximum magnetic field permitted on the superconductors.

Low-Temperature Growth of Hydrogenated Amorphous Silicon Carbide Solar Cell by Inductively Coupled Plasma Deposition Toward High Conversion Efficiency in Indoor Lighting.

PubMed

Kao, Ming-Hsuan; Shen, Chang-Hong; Yu, Pei-Chen; Huang, Wen-Hsien; Chueh, Yu-Lun; Shieh, Jia-Min

2017-10-05

A p-a-SiC:H window layer was used in amorphous Si thin film solar cells to boost the conversion efficiency in an indoor lighting of 500 lx. The p-a-SiC:H window layer/p-a-Si:H buffer layer scheme moderates the abrupt band bending across the p/i interface for the enhancement of V OC , J SC and FF in the solar spectra of short wavelengths. The optimized thickness of i-a-Si:H absorber layer is 400 nm to achieve the conversion efficiency of ~9.58% in an AM1.5 G solar spectrum. However, the optimized thickness of the absorber layer can be changed from 400 to 600 nm in the indoor lighting of 500 lx, exhibiting the maximum output power of 25.56 μW/cm 2 . Furthermore, various durability tests with excellent performance were investigated, which are significantly beneficial to harvest the indoor lights for applications in the self-powered internet of thing (IoT).

Reconnection at the earth's magnetopause - Magnetic field observations and flux transfer events

NASA Technical Reports Server (NTRS)

Russell, C. T.

1984-01-01

Theoretical models of plasma acceleration by magnetic-field-line reconnection at the earth magnetopause and the high-resolution three-dimensional plasma measurements obtained with the ISEE satellites are compared and illustrated with diagrams, graphs, drawings, and histograms. The history of reconnection theory and the results of early satellite observations are summarized; the thickness of the magnetopause current layer is discussed; problems in analyzing the polarization of current-layer rotation are considered; and the flux-transfer events responsible for periods of patchy reconnection are characterized in detail. The need for further observations and refinements of the theory to explain the initiation of reconnection and identify the mechanism determining whether it is patchy or steady-state is indicated.

Interface effects in ultra-thin films: Magnetic and chemical properties

NASA Astrophysics Data System (ADS)

Park, Sungkyun

When the thickness of a magnetic layer is comparable to (or smaller than) the electron mean free path, the interface between magnetic and non-magnetic layers becomes very important factor to determine magnetic properties of the ultra-thin films. The quality of interface can enhance (or reduce) the desired properties. Several interesting physical phenomena were studied using these interface effects. The magnetic anisotropy of ultra-thin Co films is studied as function of non-magnetic underlayer thickness and non- magnetic overlayer materials using ex situ Brillouin light scattering (BLS). I observed that perpendicular magnetic anisotropy (PMA) increases with underlayer thickness and saturates after 5 ML. This saturation can be understood as a relaxation of the in-plane lattice parameter of Au(111) on top of Cu(111) to its bulk value. For the overlayer study, Cu, Al, and Au are used. An Au overlayer gives the largest PMA due to the largest in-plane lattice mismatch between Co and Au. An unusual effect was found by adding an additional layer on top of the Au overlayer. An additional Al capping layer on top of the Au overlayer reduces the PMA significantly. The possible explanation is that the misfit strain at the interface between the Al and the Au can be propagated through the Au layer to affect the magnetic properties of Co even though the in- plane lattice mismatch is less than 1%. Another interesting problem in interface interdiffusion and thermal stability in magnetic tunnel junction (MTJ) structures is studied using X-ray photoelectron spectroscopy (XPS). Since XPS is a very chemically sensitive technique, it allows us to monitor interface interdiffusion of the MTJ structures as-deposited and during post-deposition processing. For the plasma- oxidized samples, Fe only participates in the oxidation reduction process. In contrast to plasma-oxidized samples, there were no noticeable chemical shifts as- deposited and during post-deposition processing in air- oxidized samples. However, peak intensity variations were observed due to interface interdiffusion.

Segregated tandem filter for enhanced conversion efficiency in a thermophotovoltaic energy conversion system

DOEpatents

Brown, Edward J.; Baldasaro, Paul F.; Dziendziel, Randolph J.

1997-01-01

A filter system to transmit short wavelength radiation and reflect long wavelength radiation for a thermophotovoltaic energy conversion cell comprises an optically transparent substrate segregation layer with at least one coherent wavelength in optical thickness; a dielectric interference filter deposited on one side of the substrate segregation layer, the interference filter being disposed toward the source of radiation, the interference filter including a plurality of alternating layers of high and low optical index materials adapted to change from transmitting to reflecting at a nominal wavelength .lambda..sub.IF approximately equal to the bandgap wavelength .lambda..sub.g of the thermophotovoltaic cell, the interference filter being adapted to transmit incident radiation from about 0.5.lambda..sub.IF to .lambda..sub.IF and reflect from .lambda..sub.IF to about 2.lambda..sub.IF ; and a high mobility plasma filter deposited on the opposite side of the substrate segregation layer, the plasma filter being adapted to start to become reflecting at a wavelength of about 1.5.lambda..sub.IF.

Detector and energy analyzer for energetic-hydrogen in beams and plasmas

DOEpatents

Bastasz, Robert J.; Hughes, Robert C.; Wampler, William R.

1988-01-01

A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicondioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies.

Detector and energy analyzer for energetic-hydrogen in beams and plasmas

DOEpatents

Bastasz, R.J.; Hughes, R.C.; Wampler, W.R.

1988-11-01

A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicon-dioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies. 4 figs.

Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation

PubMed Central

Kim, Dae-Kyoung; Jeong, Kwang-Sik; Kang, Yu-Seon; Kang, Hang-Kyu; Cho, Sang W.; Kim, Sang-Ok; Suh, Dongchan; Kim, Sunjung; Cho, Mann-Ho

2016-01-01

The structural stability and electrical performance of SiO2 grown on SiC via direct plasma-assisted oxidation were investigated. To investigate the changes in the electronic structure and electrical characteristics caused by the interfacial reaction between the SiO2 film (thickness ~5 nm) and SiC, X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), density functional theory (DFT) calculations, and electrical measurements were performed. The SiO2 films grown via direct plasma-assisted oxidation at room temperature for 300s exhibited significantly decreased concentrations of silicon oxycarbides (SiOxCy) in the transition layer compared to that of conventionally grown (i.e., thermally grown) SiO2 films. Moreover, the plasma-assisted SiO2 films exhibited enhanced electrical characteristics, such as reduced frequency dispersion, hysteresis, and interface trap density (Dit ≈ 1011 cm−2 · eV−1). In particular, stress induced leakage current (SILC) characteristics showed that the generation of defect states can be dramatically suppressed in metal oxide semiconductor (MOS) structures with plasma-assisted oxide layer due to the formation of stable Si-O bonds and the reduced concentrations of SiOxCy species defect states in the transition layer. That is, energetically stable interfacial states of high quality SiO2 on SiC can be obtained by the controlling the formation of SiOxCy through the highly reactive direct plasma-assisted oxidation process. PMID:27721493

Monitoring Delamination of Plasma-Sprayed Thermal Barrier Coatings by Reflectance-Enhanced Luminescence

NASA Technical Reports Server (NTRS)

Eldridge, Jeffrey I.; Bencic, Timothy J.

2006-01-01

Highly scattering plasma-sprayed thermal barrier coatings (TBCs) present a challenge for optical diagnostic methods to monitor TBC delamination because scattering attenuates light transmitted through the TBC and usually degrades contrast between attached and delaminated regions of the TBC. This paper presents a new approach where reflectance-enhanced luminescence from a luminescent sublayer incorporated along the bottom of the TBC is used to identify regions of TBC delamination. Because of the higher survival rate of luminescence reflecting off the back surface of a delaminated TBC, the strong scattering exhibited by plasma-sprayed TBCs actually accentuates contrast between attached and delaminated regions by making it more likely that multiple reflections of luminescence off the back surface occur before exiting the top surface of the TBC. A freestanding coating containing sections designed to model an attached or delaminated TBC was prepared by depositing a luminescent Eu-doped or Er-doped yttria-stabilized zirconia (YSZ) luminescent layer below a plasma-sprayed undoped YSZ layer and utilizing a NiCr backing layer to represent an attached substrate. For specimens with a Eu-doped YSZ luminescent sublayer, luminescence intensity maps showed excellent contrast between unbacked and NiCr-backed sections even at a plasma-sprayed overlayer thickness of 300 m. Discernable contrast between unbacked and NiCr-backed sections was not observed for specimens with a Er-doped YSZ luminescent sublayer because luminescence from Er impurities in the undoped YSZ layer overwhelmed luminescence originating form the Er-doped YSZ sublayer.

Implications Enzymatic Degradation of the Endothelial Glycocalyx on the Microvascular Hemodynamics and the Arteriolar Red Cell Free Layer of the Rat Cremaster Muscle.

PubMed

Yalcin, Ozlem; Jani, Vivek P; Johnson, Paul C; Cabrales, Pedro

2018-01-01

The endothelial glycocalyx is a complex network of glycoproteins, proteoglycans, and glycosaminoglycans; it lines the vascular endothelial cells facing the lumen of blood vessels forming the endothelial glycocalyx layer (EGL). This study aims to investigate the microvascular hemodynamics implications of the EGL by quantifying changes in blood flow hydrodynamics post-enzymatic degradation of the glycocalyx layer. High-speed intravital microscopy videos of small arteries (around 35 μm) of the rat cremaster muscle were recorded at various time points after enzymatic degradation of the EGL. The thickness of the cell free layer (CFL), blood flow velocity profiles, and volumetric flow rates were quantified. Hydrodynamic effects of the presence of the EGL were observed in the differences between the thickness of CFL in microvessels with an intact EGL and glass tubes of similar diameters. Maximal changes in the thickness of CFL were observed 40 min post-enzymatic degradation of the EGL. Analysis of the frequency distribution of the thickness of CFL allows for estimation of the thickness of the endothelial surface layer (ESL), the plasma layer, and the glycocalyx. Peak flow, maximum velocity, and mean velocity were found to statistically increase by 24, 27, and 25%, respectively, after enzymatic degradation of the glycocalyx. The change in peak-to-peak maximum velocity and mean velocity were found to statistically increase by 39 and 32%, respectively, after 40 min post-enzymatic degradation of the EGL. The bluntness of blood flow velocity profiles was found to be reduced post-degradation of the EGL, as the exclusion volume occupied by the EGL increased the effective volume impermeable to RBCs in microvessels. This study presents the effects of the EGL on microvascular hemodynamics. Enzymatic degradation of the EGL resulted in a decrease in the thickness of CFL, an increase in blood velocity, blood flow, and decrease of the bluntness of the blood flow velocity profile in small arterioles. In summary, the EGL functions as a molecular sieve to solute transport and as a lubrication layer to protect the endothelium from red blood cell (RBC) motion near the vessel wall, determining wall shear stress.

Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma

PubMed Central

Kawakami, Masatoshi; Metzler, Dominik; Li, Chen; Oehrlein, Gottlieb S.

2016-01-01

The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO2 using a steady-state Ar plasma, periodic injection of a defined number of C4F8 molecules, and synchronized plasma-based Ar+ ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase chemistry was characterized using optical emission spectroscopy. It was found that although the thickness of the polymer film deposited in each cycle is constant, the etching behavior changed, which is likely related to a change in the plasma gas phase chemistry. The authors found that the main gas phase changes occur after C4F8 injection. The C4F8 and the quartz window react and generate SiF and CO. The emission intensity changes with wall surface state and temperature. Therefore, changes in the plasma gas species generation can lead to a shift in etching performance during processing. During initial cycles, minimal etching is observed, while etching gradually increases with cycle number. PMID:27375342

Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors

DOEpatents

Ruffner, J.A.

1999-06-15

A method for coating (flat or non-flat) optical substrates with high-reflectivity multi-layer coatings for use at Deep Ultra-Violet (DUV) and Extreme Ultra-Violet (EUV) wavelengths. The method results in a product with minimum feature sizes of less than 0.10 [micro]m for the shortest wavelength (13.4 nm). The present invention employs a computer-based modeling and deposition method to enable lateral and vertical thickness control by scanning the position of the substrate with respect to the sputter target during deposition. The thickness profile of the sputter targets is modeled before deposition and then an appropriate scanning algorithm is implemented to produce any desired, radially-symmetric thickness profile. The present invention offers the ability to predict and achieve a wide range of thickness profiles on flat or figured substrates, i.e., account for 1/R[sup 2] factor in a model, and the ability to predict and accommodate changes in deposition rate as a result of plasma geometry, i.e., over figured substrates. 15 figs.

The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moerman, David; Colbert, Adam E.; Ginger, David S., E-mail: ginger@chem.washington.edu

We study the effects of modifying indium tin oxide electrodes with ultrathin titania (TiO{sub 2}) layers grown via plasma-enhanced atomic layer deposition (PE-ALD). We find an optimal thickness of PE-ALD-grown titania by tracking performance, which initially increases, peaks, and eventually decreases with increasing TiO{sub 2} thickness. We use scanning Kelvin probe microscopy (SKPM) to measure both the local work function and its distribution as a function of TiO{sub 2} thickness. We find that the variance in contact potential difference across the surface of the film is related to either the amorphous or anatase TiO{sub 2} form. Finally, we use localmore » SKPM recombination rate experiments, supported by bulk transient photovoltage and charge extraction measurements. We show that the optimum TiO{sub 2} thickness is the one for which the carrier lifetime is the longest and the charge carrier density is the highest, when the TiO{sub 2} is amorphous, in agreement with the device measurements.« less

GaN membrane MSM ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

2006-12-01

GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) <111> oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

Density change and viscous flow during structural relaxation of plasma-enhanced chemical-vapor-deposited silicon oxide films

NASA Astrophysics Data System (ADS)

Cao, Zhiqiang; Zhang, Xin

2004-10-01

The structural relaxation of plasma-enhanced chemical-vapor-deposited (PECVD) silane-based silicon oxide films during thermal cycling and annealing has been studied using wafer curvature measurements. These measurements, which determine stress in the amorphous silicon oxide films, are sensitive to both plastic deformation and density changes. A quantitative case study of such changes has been done based upon the experimental results. A microstructure-based mechanism elucidates seams as a source of density change and voids as a source of plastic deformation, accompanied by a viscous flow. This theory was then used to explain a series of experimental results that are related to thermal cycling as well as annealing of PECVD silicon oxide films including stress hysteresis generation and reduction and coefficient of thermal-expansion changes. In particular, the thickness effect was examined; PECVD silicon oxide films with a thickness varying from 1to40μm were studied, as certain demanding applications in microelectromechanical systems require such thick films serving as heat/electrical insulation layers.

Comparative Study of Surface Chemical Composition and Oxide Layer Modification upon Oxygen Plasma Cleaning and Piranha Etching on a Novel Low Elastic Modulus Ti25Nb21Hf Alloy

NASA Astrophysics Data System (ADS)

Paredes, Virginia; Salvagni, Emiliano; Rodríguez-Castellón, Enrique; Manero, José María

2017-08-01

Metals are widely employed for many biological artificial replacements, and it is known that the quality and the physical/chemical properties of the surface are crucial for the success of the implant. Therefore, control over surface implant materials and their elastic moduli may be crucial to avoid undesired effects. In this study, surface modification upon cleaning and activation of a low elastic modulus Ti alloy (Ti25Hf21Nb) was investigated. Two different methods, oxygen plasma (OP) cleaning and piranha (PI) solution, were studied and compared. Both surface treatments were effective for organic contaminant removal and to increase the Ti-oxide layer thickness rather than other metal-oxides present at the surface, which is beneficial for biocompatibility of the material. Furthermore, both techniques drastically increased hydrophilicity and introduced oxidation and hydroxylation (OH)-functional groups at the surface that may be beneficial for further chemical modifications. However, these treatments did not alter the surface roughness and bulk material properties. The surfaces were fully characterized in terms of surface roughness, wettability, oxide layer composition, and hydroxyl surface density through analytical techniques (interferometry, X-ray photoelectron spectroscopy (XPS), contact angle, and zinc complexation). These findings provide essential information when planning surface modifications for cleanliness, oxide layer thickness, and surface hydroxyl density, as control over these factors is essential for many applications, especially in biomaterials.

PO calculation for reduction in radar cross section of hypersonic targets using RAM

NASA Astrophysics Data System (ADS)

Liu, Song-hua; Guo, Li-xin; Pan, Wei-tao; Chen, Wei; Xiao, Yi-fan

2018-06-01

The radar cross section (RCS) reduction of hypersonic targets by radar absorbing materials (RAM) coating under different reentry cases is analyzed in the C and X bands frequency range normally used for radar detection. The physical optics method is extended to both the inhomogeneous plasma sheath and RAM layer present simultaneously. The simulation results show that the absorbing coating can reduce the RCS of the plasma cloaking system and its effectiveness is related to the maximum plasma frequency. Moreover, the amount of the RCS decrease, its maxima, and the corresponding optimal RAM thickness depend on the non-uniformity and parameters of the plasma sheath. In addition, the backward RCS of the flight vehicle shrouded by plasma shielding and man-made absorber is calculated and compared to the bare cone.

Effect of Post-spray Shot Peening Treatment on the Corrosion Behavior of NiCr-Mo Coating by Plasma Spraying of the Shell-Core-Structured Powders

NASA Astrophysics Data System (ADS)

Tian, Jia-Jia; Wei, Ying-Kang; Li, Cheng-Xin; Yang, Guan-Jun; Li, Chang-Jiu

2018-01-01

Corrosion of metal plays a detrimental role in service lifetime of parts or systems. Therefore, coating a protective film which is fully dense and defects free on the base metal is an effective approach to protect the base metal from corrosion. In this study, a dense NiCr-20Mo coating with excellent lamellar interface bonding was deposited by plasma spraying of the novel shell-core-structured Mo-clad-NiCr powders, and then post-spray shot peening treatment by cold spraying of steel shots was applied to the plasma-sprayed NiCr-20Mo coating to obtain a fully dense coating through eliminating possibly existed pores and un-bonded interfaces within the NiCr-20Mo coating. Corrosion behaviors of the NiCr-20Mo coatings before and after shot peening were tested to investigate the effect of the post-spray shot peening on the corrosion behavior of the NiCr-20Mo coating. Results showed that a much dense and uniform plasma-sprayed NiCr-20Mo coating with perfect lamellar bonding at most of interfaces was deposited. However, the electrochemical tests revealed the existence of through-thickness pores in the as-plasma-sprayed NiCr-20Mo coating. Through the post-spray shot peening treatment, a completely dense top layer in the coating was formed, and with the increase in the shot peening intensity from one pass to three passes, the dense top layer became thicker from 100 μm to reach 300 μm of the whole coating thickness. Thus, a fully dense bulk-like coating was obtained. Corrosion test results showed that the dense coating layer resulting from densification of shot peening can act as an effective barrier coating to prevent the penetration of the corrosive medium and consequently protect the substrate from corrosion effectively. Therefore, a fully dense bulk-like NiCr-20Mo coating with excellent corrosion resistance can be achieved through the plasma spraying of Mo-clad-NiCr powders followed by appropriate post-spray shot peening treatment.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

PubMed

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-03

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

PubMed Central

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-01

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future. PMID:28045075

Fabrication of gas turbine water-cooled composite nozzle and bucket hardware employing plasma spray process

DOEpatents

Schilke, Peter W.; Muth, Myron C.; Schilling, William F.; Rairden, III, John R.

1983-01-01

In the method for fabrication of water-cooled composite nozzle and bucket hardware for high temperature gas turbines, a high thermal conductivity copper alloy is applied, employing a high velocity/low pressure (HV/LP) plasma arc spraying process, to an assembly comprising a structural framework of copper alloy or a nickel-based super alloy, or combination of the two, and overlying cooling tubes. The copper alloy is plamsa sprayed to a coating thickness sufficient to completely cover the cooling tubes, and to allow for machining back of the copper alloy to create a smooth surface having a thickness of from 0.010 inch (0.254 mm) to 0.150 inch (3.18 mm) or more. The layer of copper applied by the plasma spraying has no continuous porosity, and advantageously may readily be employed to sustain a pressure differential during hot isostatic pressing (HIP) bonding of the overall structure to enhance bonding by solid state diffusion between the component parts of the structure.

Depth-Selective Diagnostics of Thermal Barrier Coatings Incorporating Thermographic Phosphors

NASA Technical Reports Server (NTRS)

Eldridge, Jeffrey I.; Bencic, Timothy J.; Allison, Stephen W.; Beshears, David L.

2003-01-01

Thermographic phosphors have been previously demonstrated to provide effective non-contact, emissivity-independent surface temperature measurements. Because of the translucent nature of thermal barrier coatings (TBCs), thermographic-phosphor-based temperature measurements can be extended beyond the surface to provide depth-selective temperature measurements by incorporating the thermographic phosphor layer at the depth where the temperature measurement is desired. In this paper, thermographic phosphor (Y2O3:Eu) fluorescence decay time measurements are demonstrated for the first time to provide through-the-coating-thickness temperature readings up to 1000 C with the phosphor layer residing beneath a 100-Fm-thick TBC (plasma-sprayed 8wt% yttria-stabilized zirconia). With an appropriately chosen excitation wavelength and detection configuration, it is shown that sufficient phosphor emission is generated to provide effective temperature measurements, despite the attenuation of both the excitation and emission intensities by the overlying TBC. This depth-selective temperature measurement capability should prove particularly useful for TBC diagnostics, where a large thermal gradient is typically present across the TBC thickness.

Growth mechanism of Al2O3 film on an organic layer in plasma-enhanced atomic layer deposition

NASA Astrophysics Data System (ADS)

Lee, J. Y.; Kim, D. W.; Kang, W. S.; Lee, J. O.; Hur, M.; Han, S. H.

2018-01-01

Differences in the physical and chemical properties of Al2O3 films on a Si wafer and a C x H y layer were investigated in the case of plasma-enhanced atomic layer deposition. The Al2O3 film on the Si had a sharper interface and lower thickness than the Al2O3 film on the C x H y . The amount of carbon-impurity near the interface was larger for Al2O3 on the C x H y than for Al2O3 on the Si. In order to understand these differences, the concentrations of Al, O, C, and Si atoms through the Al2O3 films were evaluated by using x-ray photoelectron spectroscopy (XPS) depth profiling. The emission intensities of CO molecule were analyzed for different numbers of deposition cycles, by using time-resolved optical emission spectroscopy (OES). Finally, a growth mechanism for Al2O3 on an organic layer was proposed, based on the XPS and OES results for the Si wafer and the C x H y layer.

Mechanical properties of nitrogen-rich surface layers on SS304 treated by plasma immersion ion implantation

NASA Astrophysics Data System (ADS)

Fernandes, B. B.; Mändl, S.; Oliveira, R. M.; Ueda, M.

2014-08-01

The formation of hard and wear resistant surface regions for austenitic stainless steel through different nitriding and nitrogen implantation processes at intermediate temperatures is an established technology. As the inserted nitrogen remains in solid solution, an expanded austenite phase is formed, accounting for these surface improvements. However, experiments on long-term behavior and exact wear processes within the expanded austenite layer are still missing. Here, the modified layers were produced using plasma immersion ion implantation with nitrogen gas and had a thickness of up to 4 μm, depending on the processing temperature. Thicker layers or those with higher surface nitrogen contents presented better wear resistance, according to detailed microscopic investigation on abrasion, plastic deformation, cracking and redeposition of material inside the wear tracks. At the same time, cyclic fatigue testing employing a nanoindenter equipped with a diamond ball was carried out at different absolute loads and relative unloadings. As the stress distribution between the modified layer and the substrate changes with increasing load, additional simulations were performed for obtaining these complex stress distributions. While high nitrogen concentration and/or thicker layers improve the wear resistance and hardness, these modifications simultaneously reduce the surface fatigue resistance.

Dependence of LTX plasma performance on surface conditions as determined by in situ analysis of plasma facing components

NASA Astrophysics Data System (ADS)

Lucia, M.; Kaita, R.; Majeski, R.; Bedoya, F.; Allain, J. P.; Abrams, T.; Bell, R. E.; Boyle, D. P.; Jaworski, M. A.; Schmitt, J. C.

2015-08-01

The Materials Analysis and Particle Probe (MAPP) diagnostic has been implemented on the Lithium Tokamak Experiment (LTX) at PPPL, providing the first in situ X-ray photoelectron spectroscopy (XPS) surface characterization of tokamak plasma facing components (PFCs). MAPP samples were exposed to argon glow discharge conditioning (GDC), lithium evaporations, and hydrogen tokamak discharges inside LTX. Samples were analyzed with XPS, and alterations to surface conditions were correlated against observed LTX plasma performance changes. Argon GDC caused the accumulation of nm-scale metal oxide layers on the PFC surface, which appeared to bury surface carbon and oxygen contamination and thus improve plasma performance. Lithium evaporation led to the rapid formation of a lithium oxide (Li2O) surface; plasma performance was strongly improved for sufficiently thick evaporative coatings. Results indicate that a 5 h argon GDC or a 50 nm evaporative lithium coating will both significantly improve LTX plasma performance.

Three-dimensional atom probe tomography of oxide, anion, and alkanethiolate coatings on gold.

PubMed

Zhang, Yi; Hillier, Andrew C

2010-07-15

We have used three-dimensional atom probe tomography to analyze several nanometer-thick and monomolecular films on gold surfaces. High-purity gold wire was etched by electropolishing to create a sharp tip suitable for field evaporation with a radius of curvature of <100 nm. The near-surface region of a freshly etched gold tip was examined with the atom probe at subnanometer spatial resolution and with atom-level composition accuracy. A thin contaminant layer, primarily consisting of water and atmospheric gases, was observed on a fresh tip. This sample exhibited crystalline lattice spacings consistent with the interlayer spacing of {200} lattice planes of bulk gold. A thin oxide layer was created on the gold surface via plasma oxidation, and the thickness and composition of this layer was measured. Clear evidence of a nanometer-thick oxide layer was seen coating the gold tip, and the atomic composition of the oxide layer was consistent with the expected stoichiometry for gold oxide. Monomolecular anions layers of Br(-) and I(-) were created via adsorption from aqueous solutions onto the gold. Atom probe data verified the presence of the monomolecular anion layers on the gold surface, with ion density values consistent with literature values. A hexanethiolate monolayer was coated onto the gold tip, and atom probe analysis revealed a thin film whose ion fragments were consistent with the molecular composition of the monolayer and a surface coverage similar to that expected from literature. Details of the various coating compositions and structures are presented, along with discussion of the reconstruction issues associated with properly analyzing these thin-film systems.

Target dependent femtosecond laser plasma implantation dynamics in enabling silica for high density erbium doping

PubMed Central

Chandrappan, Jayakrishnan; Murray, Matthew; Kakkar, Tarun; Petrik, Peter; Agocs, Emil; Zolnai, Zsolt; Steenson, D.P.; Jha, Animesh; Jose, Gin

2015-01-01

Chemical dissimilarity of tellurium oxide with silica glass increases phase separation and crystallization tendency when mixed and melted for making a glass. We report a novel technique for incorporating an Er3+-doped tellurite glass composition into silica substrates through a femtosecond (fs) laser generated plasma assisted process. The engineered material consequently exhibits the spectroscopic properties of Er3+-ions, which are unachievable in pure silica and implies this as an ideal material for integrated photonics platforms. Formation of a well-defined metastable and homogeneous glass structure with Er3+-ions in a silica network, modified with tellurite has been characterized using high-resolution cross-sectional transmission electron microscopy (HRTEM). The chemical and structural analyses using HRTEM, Rutherford backscattering spectrometry (RBS) and laser excitation techniques, confirm that such fs-laser plasma implanted glasses may be engineered for significantly higher concentration of Er3+-ions without clustering, validated by the record high lifetime-density product 0.96 × 1019 s.cm−3. Characterization of planar optical layers and photoluminescence emission spectra were undertaken to determine their thickness, refractive indices and photoluminescence properties, as a function of Er3+ concentration via different target glasses. The increased Er3+ content in the target glass enhance the refractive index and photoluminescence intensity of the modified silica layer whilst the lifetime and thickness decrease. PMID:26370060

Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiN plasma-enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Carcia, P. F.; McLean, R. S.; Groner, M. D.; Dameron, A. A.; George, S. M.

2009-07-01

Thin films grown by Al2O3 atomic layer deposition (ALD) and SiN plasma-enhanced chemical vapor deposition (PECVD) have been tested as gas diffusion barriers either individually or as bilayers on polymer substrates. Single films of Al2O3 ALD with thicknesses of ≥10 nm had a water vapor transmission rate (WVTR) of ≤5×10-5 g/m2 day at 38 °C/85% relative humidity (RH), as measured by the Ca test. This WVTR value was limited by H2O permeability through the epoxy seal, as determined by the Ca test for the glass lid control. In comparison, SiN PECVD films with a thickness of 100 nm had a WVTR of ˜7×10-3 g/m2 day at 38 °C/85% RH. Significant improvements resulted when the SiN PECVD film was coated with an Al2O3 ALD film. An Al2O3 ALD film with a thickness of only 5 nm on a SiN PECVD film with a thickness of 100 nm reduced the WVTR from ˜7×10-3 to ≤5×10-5 g/m2 day at 38 °C/85% RH. The reduction in the permeability for Al2O3 ALD on the SiN PECVD films was attributed to either Al2O3 ALD sealing defects in the SiN PECVD film or improved nucleation of Al2O3 ALD on SiN.

Role of sublayers in mechanical response of pulsed electron beam irradiated surface layers to contact load

NASA Astrophysics Data System (ADS)

Konovalenko, Igor S.

2017-12-01

Here we develop the movable cellular automaton method based a numerical model of surface layers in a NiCr-TiC metal ceramic composite modified by pulsed electron beam irradiation in inert gas plasmas. The model explicitly takes into account the presence of several sublayers differing in structure and mechanical properties. The contribution of each sublayer to the mechanical response of the modified surface to contact loading is studied. It is shown that the maximum strength and fracture toughness are achieved in surface layers containing thin and stiff external sublayers and a more ductile thick internal sublayer.

Structural properties of buried conducting layers formed by very low energy ion implantation of gold into polymer

NASA Astrophysics Data System (ADS)

Teixeira, F. S.; Salvadori, M. C.; Cattani, M.; Brown, I. G.

2009-09-01

We have investigated the fundamental structural properties of conducting thin films formed by implanting gold ions into polymethylmethacrylate (PMMA) polymer at 49 eV using a repetitively pulsed cathodic arc plasma gun. Transmission electron microscopy images of these composites show that the implanted ions form gold clusters of diameter ˜2-12 nm distributed throughout a shallow, buried layer of average thickness 7 nm, and small angle x-ray scattering (SAXS) reveals the structural properties of the PMMA-gold buried layer. The SAXS data have been interpreted using a theoretical model that accounts for peculiarities of disordered systems.

Development and characterization of semiconductor ion detectors for plasma diagnostics in the range over 0.3 keV

NASA Astrophysics Data System (ADS)

Cho, T.; Sakamoto, Y.; Hirata, M.; Kohagura, J.; Makino, K.; Kanke, S.; Takahashi, K.; Okamura, T.; Nakashima, Y.; Yatsu, K.; Tamano, T.; Miyoshi, S.

1997-01-01

For the purpose of plasma-ion-energy analyses in a wide-energy range from a few hundred eV to hundreds of keV, upgraded semiconductor detectors are newly fabricated and characterized using a test-ion-beam line from 0.3 to 12 keV. In particular, the detectable lowest-ion energy is drastically improved at least down to 0.3 keV; this energy is one to two orders-of-magnitude better than those for commercially available Si-surface-barrier diodes employed for previous plasma-ion diagnostics. A signal-to-noise ratio of two to three orders-of-magnitude better than that for usual metal-collector detectors is demonstrated for the compact-sized semiconductor along with the availability of the use under conditions of a good vacuum and a strong-magnetic field. Such characteristics are achieved due to the improving methods of the optimization of the thicknesses of a Si dead layer and a SiO2 layer, as well as the nitrogen-doping technique near the depletion layer along with minimizing impurity concentrations in Si. Such an upgraded capability of an extremely low-energy-ion detection with the low-noise characteristics enlarges research regimes of plasma-ion behavior using semiconductor detectors not only in the divertor regions of tokamaks but in wider spectra of open-field plasma devices including tandem mirrors. An application of the semiconductor ion detector for plasma-ion diagnostics is demonstrated in a specially designed ion-spectrometer structure.

[Research on electron density in DC needle-plate corona discharge at atmospheric pressure].

PubMed

Liu, Zhi-Qiang; Guo, Wei; Liu, Tao-Tao; Wu, Wen-Shuo; Liu, Shu-Min

2013-11-01

Using needle-plate discharge device, corona discharge experiment was done in the atmosphere. Through photo of spot size of light-emitting area, the relationship between the voltage and thickness of corona layer was discussed. When the distance between tip and plate is fixed, the thickness of corona layer increases with the increase in voltage; when the voltage is fixed, the thickness of corona layer decreases with the increase in the distance between tip and plate. As spectral intensity of N2 (C3pi(u)) (337.1 nm)reflects high energy electron density, it was measured with emission spectrometry. The results show that high energy electron density is the biggest near the needle tip and the relationship between high energy electron density and voltage is basically linear increasing. Fixing voltage, high energy electron density decreases with the increase in the distance between tip and plate. When the voltage and the distance between tip and plate are fixed, the high energy electron density increases with the decrease in the curvature radius of needle tip. These results are of great importance for the study of plasma parameters of corona discharge.

Dependence of nanomechanical modification of polymers on plasma-induced cross-linking

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tajima, S.; Komvopoulos, K.

2007-01-01

The nanomechanical properties of low-density polyethylene (LDPE) modified by inductively coupled, radio-frequency Ar plasma were investigated by surface force microscopy. The polymer surface was modified under plasma conditions of different ion energy fluences and radiation intensities obtained by varying the sample distance from the plasma power source. Nanoindentation results of the surface stiffness versus maximum penetration depth did not reveal discernible differences between untreated and plasma-treated LDPE, presumably due to the small thickness of the modified surface layer that resulted in a substrate effect. On the contrary, nanoscratching experiments demonstrated a significant increase in the surface shear resistance of plasma-modifiedmore » LDPE due to chain cross-linking. These experiments revealed an enhancement of cross-linking with increasing ion energy fluence and radiation intensity, and a tip size effect on the friction force and dominant friction mechanisms (adhesion, plowing, and microcutting). In addition, LDPE samples with a LiF crystal shield were exposed to identical plasma conditions to determine the role of vacuum ultraviolet (VUV) and ultraviolet (UV) radiation in the cross-linking process. The cross-linked layer of plasma-treated LDPE exhibited much higher shear strength than that of VUV/UV-treated LDPE. Plasma-induced surface modification of the nanomechanical properties of LDPE is interpreted in the context of molecular models of the untreated and cross-linked polymer surfaces derived from experimental findings.« less

Plasma carburizing with surface micro-melting

NASA Astrophysics Data System (ADS)

Balanovsky, A. E.; Grechneva, M. V.; Van Huy, Vu; Ponomarev, B. B.

2018-03-01

This paper presents carburizing the surface of 20 low carbon steel using electric arc and graphite prior. A carbon black solution was prepared with graphite powder and sodium silicate in water. A detailed analysis of the phase structure and the distribution profile of the sample hardness after plasma treatment were given. The hardened layer consists of three different zones: 1 – the cemented layer (thin white zone) on the surface, 2 – heat-affected zone (darkly etching structure), 3 – the base metal. The experimental result shows that the various microstructures and micro-hardness profiles were produced depending on the type of graphite coating (percentage of liquid glass) and processing parameters. The experiment proved that the optimum content of liquid glass in graphite coating is 50–87.5%. If the amount of liquid glass is less than 50%, adhesion to metal is insufficient. If liquid glass content is more than 87.5%, carburization of a metal surface does not occur. A mixture of the eutectic lamellar structure, martensite and austenite was obtained by using graphite prior with 67% sodium silicate and the levels of the hardness layer increased to around 1000 HV. The thickness of the cemented layer formed on the surface was around 200 μm. It is hoped that this plasma surface carburizing treatment could improve the tribological resistance properties.

An evaluation method of the profile of plasma-induced defects based on capacitance-voltage measurement

NASA Astrophysics Data System (ADS)

Okada, Yukimasa; Ono, Kouichi; Eriguchi, Koji

2017-06-01

Aggressive shrinkage and geometrical transition to three-dimensional structures in metal-oxide-semiconductor field-effect transistors (MOSFETs) lead to potentially serious problems regarding plasma processing such as plasma-induced physical damage (PPD). For the precise control of material processing and future device designs, it is extremely important to clarify the depth and energy profiles of PPD. Conventional methods to estimate the PPD profile (e.g., wet etching) are time-consuming. In this study, we propose an advanced method using a simple capacitance-voltage (C-V) measurement. The method first assumes the depth and energy profiles of defects in Si substrates, and then optimizes the C-V curves. We applied this methodology to evaluate the defect generation in (100), (111), and (110) Si substrates. No orientation dependence was found regarding the surface-oxide layers, whereas a large number of defects was assigned in the case of (110). The damaged layer thickness and areal density were estimated. This method provides the highly sensitive PPD prediction indispensable for designing future low-damage plasma processes.

The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

NASA Astrophysics Data System (ADS)

Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

2016-12-01

Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

Al2O3-ZrO2 Finely Structured Multilayer Architectures from Suspension Plasma Spraying

NASA Astrophysics Data System (ADS)

Tingaud, Olivier; Montavon, Ghislain; Denoirjean, Alain; Coudert, Jean-François; Rat, Vincent; Fauchais, Pierre

2010-01-01

Suspension plasma spraying (SPS) is an alternative to conventional atmospheric plasma spraying (APS) aiming at manufacturing thinner layers (i.e., 10-100 μm) due to the specific size of the feedstock particles, from a few tens of nanometers to a few micrometers. The staking of lamellae and particles, which present a diameter ranging from 0.1 to 2.0 μm and an average thickness from 20 to 300 nm, permits to manufacture finely structured layers. Moreover, it appears as a versatile process able to manufacture different coating architectures according to the operating parameters (suspension properties, injection configuration, plasma properties, spray distance, torch scan velocity, scanning step, etc.). However, the different parameters controlling the properties of the coating, and their interdependences, are not yet fully identified. Thus, the aim of this paper is, on the one hand, to better understand the influence of operating parameters on the coating manufacturing mechanisms (in particular, the plasma gas mixture effect) and, on the other hand, to produce Al2O3-ZrO2 finely structured layers with large varieties of architectures. For this purpose, a simple theoretical model was used to describe the plasma torch operating conditions at the nozzle exit, based on experimental data (mass enthalpy, arc current intensity, thermophysical properties of plasma forming gases, etc.) and the influences of the spray parameters were determined by mean of the study of sizes and shapes of spray beads. The results enabled then to reach a better understanding of involved phenomena and their interactions on the final coating architectures permitting to manufacture several types of microstructures.

Response of the solar atmosphere to a simple flare burst: UV emission from the flare transition layer.

NASA Astrophysics Data System (ADS)

Shmeleva, O. P.

The flare transition layer exists as a relatively steady formation even during impulsive heating. It is maintained by a heat flow from the high-temperature plasma, where the major part of the electron beam energy is absorbed. The lifetime of this plasma is much greater than the impulsive heating time. Intensities of resonance UV lines are calculated using both the model of impulsive nonthermal heating by energetic electrons and the model of continuous thermal heating. The calculated line intensity is almost constant during a long time. The line Doppler shifts predicted by the former model match observations. This suggests that the model represents sufficiently well the actual dynamics of the flare plasma. The flare transition layer is a thin formation, its thickness being Δξ = 1021m-2. It is therefore described adequately within the p = const approximation though the picture of hydrodynamic response of the solar atmosphere to the impulsive heating by energy flows is rather complicated and nonsteady, of course. The intensities of the C IV λλ154.8, 155.1 nm and O VI λλ103.2, 103.8 nm lines are calculated within the scope of the model of continuous thermal heating, in which the conductive heating of the flare transition layer is balanced by radiative cooling. The line intensities are proportional to the pressure in the layer, which permits the pressure to be found from the observed line intensities. The analysis reveals that both heating models adequately represent the actual structure and dynamics of plasma in a flare. In the flare transition layer, the classical heat conduction always does work.

Characterization of Ceramic Plasma-Sprayed Coatings, and Interaction Studies Between U-Zr Fuel and Ceramic Coated Interface at an Elevated Temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ki Hwan Kim; Chong Tak Lee; R. S. Fielding

2011-08-01

Candidate coating materials for re-usable metallic nuclear fuel crucibles, HfN, TiC, ZrC, and Y2O3, were plasma-sprayed onto niobium substrates. The coating microstructure and the thermal cycling behavior were characterized, and U-Zr melt interaction studies carried out. The Y2O3 coating layer had a uniform thickness and was well consolidated with a few small pores scattered throughout. While the HfN coating was not well consolidated with a considerable amount of porosity, but showed somewhat uniform thickness. Thermal cycling tests on the HfN, TiC, ZrC, and Y2O3 coatings showed good cycling characteristics with no interconnected cracks forming even after 20 cycles. Interaction studiesmore » done on the coated samples by dipping into a U-20wt.%Zr melt indicated that HfN and Y2O3 did not form significant reaction layers between the melt and the coating while the TiC and the ZrC coatings were significantly degraded. Y2O3 exhibited the most promising performance among HfN, TiC, ZrC, and Y2O3 coatings.« less

Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shetty, Satish; Shivaprasad, S. M., E-mail: smsprasad@jncasr.ac.in

2016-02-07

We report here a systematic study of the nitridation of the Si (111) surface by nitrogen plasma exposure. The surface and interface chemical composition and surface morphology are investigated by using RHEED, X-ray photoelectron spectroscopy, and atomic force microscopy (AFM). At the initial stage of nitridation two superstructures—“8 × 8” and “8/3 × 8/3”—form, and further nitridation leads to 1 × 1 stoichiometric silicon nitride. The interface is seen to have the Si{sup 1+} and Si{sup 3+} states of silicon bonding with nitrogen, which suggests an atomically abrupt and defect-free interface. The initial single crystalline silicon nitride layers are seen to become amorphous at higher thicknesses.more » The AFM image shows that the nitride nucleates at interfacial dislocations that are connected by sub-stoichiometric 2D-nitride layers, which agglomerate to form thick overlayers. The electrical properties of the interface yield a valence band offset that saturates at 1.9 eV and conduction band offset at 2.3 eV due to the evolution of the sub-stoichiometric interface and band bending.« less

Investigation of microstructure and properties of ultrathin graded ZrNx self-assembled diffusion barrier in deep nano-vias prepared by plasma ion immersion implantation

NASA Astrophysics Data System (ADS)

Zou, Jianxiong; Liu, Bo; Lin, Liwei; Lu, Yuanfu; Dong, Yuming; Jiao, Guohua; Ma, Fei; Li, Qiran

2018-01-01

Ultrathin graded ZrNx self-assembled diffusion barriers with controllable stoichiometry was prepared in Cu/p-SiOC:H interfaces by plasma immersion ion implantation (PIII) with dynamic regulation of implantation fluence. The fundamental relationship between the implantation fluence of N+ and the stoichiometry and thereby the electrical properties of the ZrNx barrier was established. The optimized fluence of a graded ZrN thin film with gradually decreased Zr valence was obtained with the best electrical performance as well. The Cu/p-SiOC:H integration is thermally stable up to 500 °C due to the synergistic effect of Cu3Ge and ZrNx layers. Accordingly, the PIII process was verified in a 100-nm-thick Cu dual-damascene interconnect, in which the ZrNx diffusion barrier of 1 nm thick was successfully self-assembled on the sidewall without barrier layer on the via bottom. In this case, the via resistance was reduced by approximately 50% in comparison with Ta/TaN barrier. Considering the results in this study, ultrathin ZrNx conformal diffusion barrier can be adopted in the sub-14 nm technology node.

Micro-NRA and micro-3HIXE with 3He microbeam on samples exposed in ASDEX Upgrade and Pilot-PSI machines

NASA Astrophysics Data System (ADS)

Kelemen, Mitja; Založnik, Anže; Vavpetič, Primož; Pečovnik, Matic; Pelicon, Primož; Hakola, Antti; Lahtinen, Aki; Karhunen, Juuso; Piip, Kaarel; Paris, Peeter; Laan, Matti; Krieger, Karl; Oberkofler, Martin; van der Meiden, Hennie; Markelj, Sabina

2017-08-01

Micro nuclear reaction analysis (micro-NRA) exploiting the nuclear reaction D(3He,p)4He was used for post-mortem analyses of special marker samples, exposed to deuterium plasma inside ASDEX Upgrade (AUG) tokamak and to the deuterium plasma jet in the Pilot-PSI linear plasma gun. Lateral concentration profiles of deuterium and erosion/deposition profiles of the marker materials were obtained by a combination of micro-NRA and particle induced X-ray emission by 3He beam (3HIXE). In the case of AUG samples, where 25 nm thick W marker layers had been deposited on unpolished and polished graphite substrates, the effect of surface roughness on local erosion and deposition was also investigated. The lateral distribution of W concentration showed that erosion is much more distinct in the case of polished samples and the resulting surface shows a ;leopard; skin pattern of W accumulated on carbon aggregates left on the surface from polishing. The Pilot-PSI samples indicated preferential accumulation of deuterium a few mm off from the centre of the region affected by the plasma beam. This is connected with the largest surface modifications while the thick deposited layers at the centre do not favour deuterium retention per se. The results were cross correlated with those obtained using laser-induced breakdown spectroscopy (LIBS). With its quantitative abilities, micro-NRA provided essential calibration data for in situ LIBS operation, as well as for complementary post mortem Secondary Ion Mass Spectroscopy (SIMS).

Characterization and study of mechanical and tribological properties on titanium di oxide (TiO2) coated 304L stainless steel

NASA Astrophysics Data System (ADS)

Ghanaraja, S.; Ali, Syed Imran; Ravikumar, K. S.; Likith, P.

2018-04-01

In the present investigation Atmospheric Plasma Spraying (APS) method is selected for coating the materials on 304L Stainless Steel as a substrate material, also called as substrate of Thermal Barrier Coating (TBC) system developed in the present work. Commercially available Ni-Cr metal powder is selected for bond coat and TiO2 powder is selected for Top Coat. The thickness of bond coat is taken as 75 µm where as the top coat thickness is varied as 100 µm, 200 µm and 300 µm. In plasma sprayed coating more attention is given to obtain uniform thickness on the given substrate. The various surface texture parameters of each sample is tested, morphology and coating thickness of above TBC system are studied with the help of SEM and X-Ray Diffraction for phase analysis. Micro-hardness of each layer of coating is measured by using Vicker's diamond indentation and the abrasive wear resistance of each system has been investigated through Pin-on-disc test, at room temperature by using wear and friction tribometer. The coating system possesses good wear resistance and can be used in various applications.

Etching and oxidation of InAs in planar inductively coupled plasma

NASA Astrophysics Data System (ADS)

Dultsev, F. N.; Kesler, V. G.

2009-10-01

The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4/H 2/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

Low-Temperature Growth of Amorphous Silicon Films and Direct Fabrication of Solar Cells on Flexible Polyimide and Photo-Paper Substrates

NASA Astrophysics Data System (ADS)

Madaka, Ramakrishna; Kanneboina, Venkanna; Agarwal, Pratima

2018-05-01

Direct deposition of hydrogenated amorphous silicon (a-Si:H) thin films and fabrication of solar cells on polyimide (PI) and photo-paper (PP) substrates using a rf-plasma-enhanced chemical vapor deposition technique is reported. Intrinsic amorphous silicon films were deposited on PI and PP substrates by varying the substrate temperature (T s) over 70-150°C to optimize the deposition parameters for best quality films. The films deposited on both PI and PP substrates at a temperature as low as 70°C showed a photosensitivity (σ ph/σ d) of nearly 4 orders of magnitude which increased to 5-6 orders of magnitude when the substrate temperature was increased to 130-150°C. The increase in σ ph/σ d is due to the presence of a few nanometer-sized crystallites embedded in the film. Solar cells (n-i-p) were fabricated directly on PI, PP and Corning 1737 glass (Corning) at 150°C for different thicknesses of an intrinsic amorphous silicon layer (i-layer). With the increase in i-layer thickness from 330 nm to 700 nm, the solar cell efficiency was found to increase from 3.81% to 5.02% on the Corning substrate whereas on the flexible PI substrate an increase from 3.38% to 4.38% was observed. On the other hand, in the case of cells on PP, the i-layer thickness was varied from 200 nm to 700 nm and the best cell efficiency 1.54% was obtained for the 200-nm-thick i-layer. The fabrication of a-Si (n-i-p) solar cells on photo-paper is presented for the first time.

Multilayer optical dielectric coating

DOEpatents

Emmett, John L.

1990-01-01

A highly damage resistant, multilayer, optical reflective coating includes alternating layers of doped and undoped dielectric material. The doping levels are low enough that there are no distinct interfaces between the doped and undoped layers so that the coating has properties nearly identical to the undoped material. The coating is fabricated at high temperature with plasma-assisted chemical vapor deposition techniques to eliminate defects, reduce energy-absorption sites, and maintain proper chemical stoichiometry. A number of differently-doped layer pairs, each layer having a thickness equal to one-quarter of a predetermined wavelength in the material are combined to form a narrowband reflective coating for a predetermined wavelength. Broadband reflectors are made by using a number of narrowband reflectors, each covering a portion of the broadband.

Electron Dynamics in a Subproton-Gyroscale Magnetic Hole

NASA Technical Reports Server (NTRS)

Gershman, Daniel J.; Dorelli, John C.; Vinas, Adolfo F.; Avanov, Levon A.; Gliese, Ulrik B.; Barrie, Alexander C.; Coffey, Victoria; Chandler, Michael; Dickson, Charles; MacDonald, Elizabeth A.;

Ponderomotive ion acceleration in dense magnetized laser-irradiated thick target plasmas

NASA Astrophysics Data System (ADS)

Sinha, Ujjwal; Kaw, Predhiman

2012-03-01

When a circularly polarized laser pulse falls on an overdense plasma, it displaces the electrons via ponderomotive force creating a double layer. The double layer constitutes of an ion and electron sheath with in which the electrostatic field present is responsible for ion acceleration. In this paper, we have analyzed the effect a static longitudinal magnetic field has over the ion acceleration mechanism. The longitudinal magnetic field changes the plasma dielectric constant due to cyclotron effects which in turn enhances or reduces the ponderomotive force exerted by the laser depending on whether the laser is left or right circularly polarized. Also, the analysis of the ion space charge region present behind the ion sheath of the laser piston that undergoes coulomb explosion has been explored for the first time. We have studied the interaction of an incoming ion beam with the laser piston and the ion space charge. It has been found that the exploding ion space charge has the ability to act as an energy amplifier for incoming ion beams.

Segregated tandem filter for enhanced conversion efficiency in a thermophotovoltaic energy conversion system

DOEpatents

Brown, E.J.; Baldasaro, P.F.; Dziendziel, R.J.

1997-12-23

A filter system to transmit short wavelength radiation and reflect long wavelength radiation for a thermophotovoltaic energy conversion cell comprises an optically transparent substrate segregation layer with at least one coherent wavelength in optical thickness; a dielectric interference filter deposited on one side of the substrate segregation layer, the interference filter being disposed toward the source of radiation, the interference filter including a plurality of alternating layers of high and low optical index materials adapted to change from transmitting to reflecting at a nominal wavelength {lambda}{sub IF} approximately equal to the bandgap wavelength {lambda}{sub g} of the thermophotovoltaic cell, the interference filter being adapted to transmit incident radiation from about 0.5{lambda}{sub IF} to {lambda}{sub IF} and reflect from {lambda}{sub IF} to about 2{lambda}{sub IF}; and a high mobility plasma filter deposited on the opposite side of the substrate segregation layer, the plasma filter being adapted to start to become reflecting at a wavelength of about 1.5{lambda}{sub IF}. 10 figs.

Cell Surface Interference with Plasma Membrane and Transport Processes in Yeasts.

PubMed

Francois, Jean Marie

2016-01-01

The wall of the yeast Saccharomyces cerevisiae is a shell of about 120 nm thick, made of two distinct layers, which surrounds the cell. The outer layer is constituted of highly glycosylated proteins and the inner layer is composed of β-glucan and chitin. These two layers are interconnected through covalent linkages leading to a supramolecular architecture that is characterized by physical and chemical properties including rigidity, porosity and biosorption. The later property results from the presence of highly negative charged phosphate and carboxylic groups of the cell wall proteins, allowing the cell wall to act as an efficient barrier to metals ions, toxins and organic compounds. An intimate connection between cell wall and plasma membrane is indicated by the fact that changes in membrane fluidity results in change in cell wall nanomechanical properties. Finally, cell wall contributes to transport processes through the use of dedicated cell wall mannoproteins, as it is the case for Fit proteins implicated in the siderophore-iron bound transport and the Tir/Dan proteins family in the uptake of sterols.

Electromagnetic shielding effectiveness of a thin silver layer deposited onto PET film via atmospheric pressure plasma reduction

NASA Astrophysics Data System (ADS)

Oh, Hyo-Jun; Dao, Van-Duong; Choi, Ho-Suk

2018-03-01

This study presents the first use of a plasma reduction reaction under atmospheric pressure to fabricate a thin silver layer on polyethylene terephthalate (PET) film without the use of toxic chemicals, high voltages, or an expensive vacuum apparatus. The developed film is applied to electromagnetic interference (EMI) shielding. After repeatedly depositing a silver layer through a plasma reduction reaction on PET, we can successfully fabricate a uniformly deposited thin silver layer. It was found that both the particle size and film thickness of thin silver layers fabricated at different AgNO3 concentrations increase with an increase in the concentration of AgNO3. However, the roughness of the thin silver layer decreases when increasing the concentration of AgNO3 from 100 to 500 mM, and the roughness increases with a further increase in the concentration of AgNO3. The EMI shielding effectiveness (SE) of the film is measured in the frequency range of 0.045 to 1 GHz. As a result of optimizing the electrical conductivity by measuring sheet resistance of the thin silver layer, the film fabricated from 500 mM AgNO3 exhibits the highest EMI SE among all fabricated films. The maximum values of the EMI SE are 60.490 dB at 0.1 GHz and 54.721 dB at 1.0 GHz with minimum sheet resistance of 0.244 Ω/□. Given that the proposed strategy is simple and effective, it is promising for fabricating various low-cost metal films with high EMI SE.

Thin layer model for nonlinear evolution of the Rayleigh-Taylor instability

NASA Astrophysics Data System (ADS)

Zhao, K. G.; Wang, L. F.; Xue, C.; Ye, W. H.; Wu, J. F.; Ding, Y. K.; Zhang, W. Y.

2018-03-01

On the basis of the thin layer approximation [Ott, Phys. Rev. Lett. 29, 1429 (1972)], a revised thin layer model for incompressible Rayleigh-Taylor instability has been developed to describe the deformation and nonlinear evolution of the perturbed interface. The differential equations for motion are obtained by analyzing the forces (the gravity and pressure difference) of fluid elements (i.e., Newton's second law). The positions of the perturbed interface are obtained from the numerical solution of the motion equations. For the case of vacuum on both sides of the layer, the positions of the upper and lower interfaces obtained from the revised thin layer approximation agree with that from the weakly nonlinear (WN) model of a finite-thickness fluid layer [Wang et al., Phys. Plasmas 21, 122710 (2014)]. For the case considering the fluids on both sides of the layer, the bubble-spike amplitude from the revised thin layer model agrees with that from the WN model [Wang et al., Phys. Plasmas 17, 052305 (2010)] and the expanded Layzer's theory [Goncharov, Phys. Rev. Lett. 88, 134502 (2002)] in the early nonlinear growth regime. Note that the revised thin layer model can be applied to investigate the perturbation growth at arbitrary Atwood numbers. In addition, the large deformation (the large perturbed amplitude and the arbitrary perturbed distributions) in the initial stage can also be described by the present model.

Accelerated cell-surface interlocking on plasma polymer-modified porous ceramics.

PubMed

Rebl, Henrike; Finke, Birgit; Schmidt, Jürgen; Mohamad, Heba S; Ihrke, Roland; Helm, Christiane A; Nebe, J Barbara

2016-12-01

Excellent osseointegration of permanent implants is crucial for the long lasting success of the implantation. To improve the osseointegrative potential, bio-inert titanium alloy surfaces (Ti6Al4V) are modified by plasma chemical oxidation (PCO®) of the titanium-oxide layer to a non-stoichiometric, amorphous calcium phosphate layer. The native titanium-oxide film measuring only a few nanometers is converted by PCO® to a thick porous calcium phosphate layer of about 10μm. In a second step the PCO surface is combined with a cell adhesive plasma-polymerized allylamine (PPAAm) nano film (5 and 50nm). Independent of the PPAAm coating homogeneity, the human osteoblast-like MG-63 cells show a remarkable increase in cell size and well-developed filopodia. Analyses of the actin cytoskeleton reveal that the cells mold to the pore shape of the PPAAm-covered PCO, thereby establishing a strong attachment to the surface. Interestingly, we could demonstrate that even though our untreated PCO shows excellent hydrophilicity, this alone is not sufficient to facilitate fast cell spreading, but the positive surface charges mediated by PPAAm. This multilayer composite material guarantees enhanced interlocking of the cells with the porous surface. Copyright © 2016 Elsevier B.V. All rights reserved.

Three-dimensional rotational plasma flows near solid surfaces in an axial magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gorshunov, N. M., E-mail: gorshunov-nm@nrcki.ru; Potanin, E. P., E-mail: potanin45@yandex.ru

2016-11-15

A rotational flow of a conducting viscous medium near an extended dielectric disk in a uniform axial magnetic field is analyzed in the magnetohydrodynamic (MHD) approach. An analytical solution to the system of nonlinear differential MHD equations of motion in the boundary layer for the general case of different rotation velocities of the disk and medium is obtained using a modified Slezkin–Targ method. A particular case of a medium rotating near a stationary disk imitating the end surface of a laboratory device is considered. The characteristics of a hydrodynamic flow near the disk surface are calculated within the model ofmore » a finite-thickness boundary layer. The influence of the magnetic field on the intensity of the secondary flow is studied. Calculations are performed for a weakly ionized dense plasma flow without allowance for the Hall effect and plasma compressibility. An MHD flow in a rotating cylinder bounded from above by a retarding cap is considered. The results obtained can be used to estimate the influence of the end surfaces on the main azimuthal flow, as well as the intensities of circulating flows in various devices with rotating plasmas, in particular, in plasma centrifuges and laboratory devices designed to study instabilities of rotating plasmas.« less

Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO{sub 2} using cyclic Ar/C{sub 4}F{sub 8} plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawakami, Masatoshi; Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu

2016-07-15

The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO{sub 2} using a steady-state Ar plasma, periodic injection of a defined number of C{sub 4}F{sub 8} molecules, and synchronized plasma-based Ar{sup +} ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase chemistry was characterized using optical emission spectroscopy. It was found that although the thickness of the polymer film deposited in each cycle is constant, the etching behavior changed, which is likely related to a change inmore » the plasma gas phase chemistry. The authors found that the main gas phase changes occur after C{sub 4}F{sub 8} injection. The C{sub 4}F{sub 8} and the quartz window react and generate SiF and CO. The emission intensity changes with wall surface state and temperature. Therefore, changes in the plasma gas species generation can lead to a shift in etching performance during processing. During initial cycles, minimal etching is observed, while etching gradually increases with cycle number.« less

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

PubMed

Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

2017-12-01

Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

Investigations of plasmoid reconnection in the presence of strong guide fields in CHI plasma start-up on HIST

NASA Astrophysics Data System (ADS)

Nagata, Masayoshi; Fujita, Akihiro; Ibragi, Youhei; Matsui, Takahiro; Kikuchi, Yusuke; Fukumoto, Naoyuki; Kanki, Takashi

2017-10-01

Plasmoid magnetic reconnections have been examined in the Coaxial Helicity Injection (CHI) experiments on HIST. Magnetic reconnections are required for the formation of closed flux surfaces in the transient-CHI start-up plasmas. So far, we have observed formation of plasmoids inside an elongated current layer to create the multiple X-points during the CHI process. According to the MHD simulation by F. Ebrahimi and R. Raman, the reconnection rate based on the plasmoid instability is faster than that by Sweet-Parker (S-P) model. To estimate the Lundquist number S number, we have measured spatial profiles of magnetic field strength, electron density and temperature in the current layer. In this meeting, we will present the effect of the guide (toroidal) magnetic field and mass (H, D and He) on the current layer thickness and reconnection rates of plasmoids. It is found that behavior of plasmoids is synchronized with Ion Doppler temperature, leading to ion heating.

The bonding of protective films of amorphic diamond to titanium

NASA Astrophysics Data System (ADS)

Collins, C. B.; Davanloo, F.; Lee, T. J.; Jander, D. R.; You, J. H.; Park, H.; Pivin, J. C.

1992-04-01

Films of amorphic diamond can be deposited from laser plasma ions without the use of catalysts such as hydrogen or fluorine. Prepared without columnar patterns of growth, the layers of this material have been reported to have ``bulk'' values of mechanical properties that have suggested their usage as protective coatings for metals. Described here is a study of the bonding and properties realized in one such example, the deposition of amorphic diamond on titanium. Measurements with Rutherford backscattering spectrometry and transmission electron microscopy showed that the diamond coatings deposited from laser plasmas were chemically bonded to Ti substrates in 100-200-Å-thick interfacial layers containing some crystalline precipitates of TiC. Resistance to wear was estimated with a modified sand blaster and in all cases the coating was worn away without any rupture or deterioration of the bonding layer. Such wear was greatly reduced and lifetimes of the coated samples were increased by a factor of better than 300 with only 2.7 μm of amorphic diamond.

Fabrication of wear-resistant silicon microprobe tips for high-speed surface roughness scanning devices

NASA Astrophysics Data System (ADS)

Wasisto, Hutomo Suryo; Yu, Feng; Doering, Lutz; Völlmeke, Stefan; Brand, Uwe; Bakin, Andrey; Waag, Andreas; Peiner, Erwin

2015-05-01

Silicon microprobe tips are fabricated and integrated with piezoresistive cantilever sensors for high-speed surface roughness scanning systems. The fabrication steps of the high-aspect-ratio silicon microprobe tips were started with photolithography and wet etching of potassium hydroxide (KOH) resulting in crystal-dependent micropyramids. Subsequently, thin conformal wear-resistant layer coating of aluminum oxide (Al2O3) was demonstrated on the backside of the piezoresistive cantilever free end using atomic layer deposition (ALD) method in a binary reaction sequence with a low thermal process and precursors of trimethyl aluminum and water. The deposited Al2O3 layer had a thickness of 14 nm. The captured atomic force microscopy (AFM) image exhibits a root mean square deviation of 0.65 nm confirming the deposited Al2O3 surface quality. Furthermore, vacuum-evaporated 30-nm/200-nm-thick Au/Cr layers were patterned by lift-off and served as an etch mask for Al2O3 wet etching and in ICP cryogenic dry etching. By using SF6/O2 plasma during inductively coupled plasma (ICP) cryogenic dry etching, micropillar tips were obtained. From the preliminary friction and wear data, the developed silicon cantilever sensor has been successfully used in 100 fast measurements of 5- mm-long standard artifact surface with a speed of 15 mm/s and forces of 60-100 μN. Moreover, the results yielded by the fabricated silicon cantilever sensor are in very good agreement with those of calibrated profilometer. These tactile sensors are targeted for use in high-aspect-ratio microform metrology.

CMUTs with high-K atomic layer deposition dielectric material insulation layer.

PubMed

Xu, Toby; Tekes, Coskun; Degertekin, F

2014-12-01

Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Six)Ny)) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2) such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD Six)Ny) and 100-nm HfO2) insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure.

Etching Selectivity of Cr, Fe and Ni Masks on Si & SiO2 Wafers

NASA Astrophysics Data System (ADS)

Garcia, Jorge; Lowndes, Douglas H.

2000-10-01

During this Summer 2000 I joined the Semiconductors and Thin Films group led by Dr. Douglas H. Lowndes at Oak Ridge National Laboratory’s Solid State Division. Our objective was to evaluate the selectivity that Trifluoromethane (CHF3), and Sulfur Hexafluoride (SF6) plasmas have for Si, SiO2 wafers and the Ni, Cr, and Fe masks; being this etching selectivity the ratio of the etching rates of the plasmas for each of the materials. We made use of Silicon and Silicon Dioxide-coated wafers that have Fe, Cr or Ni masks. In the semiconductor field, metal layers are often used as masks to protect layers underneath during processing steps; when these wafers are taken to the dry etching process, both the wafer and the mask layers’ thickness are reduced.

Process for producing cadmium sulfide on a cadmium telluride surface

DOEpatents

Levi, Dean H.; Nelson, Art J.; Ahrenkiel, Richard K.

1996-01-01

A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.

Process for producing cadmium sulfide on a cadmium telluride surface

DOEpatents

Levi, D.H.; Nelson, A.J.; Ahrenkiel, R.K.

1996-07-30

A process is described for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness. 12 figs.

Characterization and Application of a Planar Radio - Inductively-Coupled Plasma Source for the Production of Barrier Coatings.

NASA Astrophysics Data System (ADS)

Mahoney, Leonard Joseph

A planar radio-frequency (rf) inductively-coupled plasma (ICP) source is used to produce fluorocarbon discharges (CF_4/Ar) to fluorinate the surface of high-density polyethylene (HDPE). Using this system, concurrent studies of discharge characteristics, permeation properties of treated polymers and polymer surface characteristics are conducted to advance the use of plasma-fluorinated polymer surfaces as a barrier layer for automotive applications. Langmuir probes are used to determine spatial distribution of charged-particle and space-potential characteristics in Ar and CF_4/Ar discharges and to show the influence of the spatial distribution of the heating regions and the reactor boundaries on the discharge uniformity. Langmuir probes are also used to identify rf anisotropic drift motion of electrons in the heating regions of the source and transient high-energy electron features in pulsed discharges. These latter features allow pulsed ICP sources to be operated at low time-averaged powers that are necessary to treat thermally sensitive polymers. Fourier Transform Infrared (FITR) spectroscopy is used to measure the dissociation of fluorocarbon gases and to explore differences between pulsed- and continuous -power operation. Dissociation levels of CF_4 (50-85%) using pulsed-power operation are as high as that for continuous operation, even though the net time -averaged power is far less with pulsed operation. The result suggests that pulsed fluorocarbon discharges possess high concentrations of chemically-active species needed for rapid surface fluorination. A gravimetric permeation cup method is used to measure the permeation rate of test fuels through HDPE membranes, and electron spectroscopy for chemical analysis (ESCA) studies are performed to determine the stoichiometry and thickness of the barrier layer. From these studies we find that a 50-70 A thick, polar, fluoro-hydrocarbon over layer reduces the permeation of isooctane/toluene/methanol mixtures by a factor of 4. To increase the permeation resistance for automotive applications, this result points towards the deposition of a 1000 A thick fluoro-hydrocarbon barrier coating with stoichiometry and bond structures similar to the CF_4/Ar treated HDPE.

Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources

NASA Astrophysics Data System (ADS)

Haiying, WEI; Hongge, GUO; Lijun, SANG; Xingcun, LI; Qiang, CHEN

2018-04-01

In this paper, Al2O3 thin films are deposited on a hydrogen-terminated Si substrate by using two home-built electron cyclotron resonance (ECR) and magnetic field enhanced radio frequency plasma-assisted atomic layer deposition (PA-ALD) devices with Al(CH3)3 (trimethylaluminum, TMA) and oxygen plasma used as precursor and oxidant, respectively. The thickness, chemical composition, surface morphology and group reactions are characterized by in situ spectroscopic ellipsometer, x-ray photoelectric spectroscopy, atomic force microscopy, scanning electron microscopy, a high-resolution transmission electron microscope and in situ mass spectrometry (MS), respectively. We obtain that both ECR PA-ALD and the magnetic field enhanced PA-ALD can deposit thin films with high density, high purity, and uniformity at a high deposition rate. MS analysis reveals that the Al2O3 deposition reactions are not simple reactions between TMA and oxygen plasma to produce alumina, water and carbon dioxide. In fact, acetylene, carbon monoxide and some other by-products also appear in the exhaustion gas. In addition, the presence of bias voltage has a certain effect on the deposition rate and surface morphology of films, which may be attributed to the presence of bias voltage controlling the plasma energy and density. We conclude that both plasma sources have a different deposition mechanism, which is much more complicated than expected.

Design of experiment for optimization of plasma-polymerized octafluorocyclobutane coating on very high aspect ratio silicon molds.

PubMed

Yeo, L P; Yan, Y H; Lam, Y C; Chan-Park, Mary B

2006-11-21

As-fabricated deep reactive ion etched (DRIE) silicon mold with very high aspect ratio (>10) feature patterns is unsuitable for poly(dimethylsiloxane) (PDMS) replication because of the strong interaction between the Si surface and the replica and the corrugated mold sidewalls. The silicon mold can be conveniently passivated via plasma polymerization of octafluorocyclobutane (C4F8), which is also employed in the DRIE process itself, to enable the mold to be used repeatedly. To optimize the passivation conditions, we have undertaken a Box-Behnken experimental design on the basis of three passivation process parameters (plasma power, C4F8 flow rate, and deposition time). The measured responses were fluorinated film thickness, demolding status/success, demolding force, and fluorine/carbon ratio on the fifth replica surface. The optimal passivation process conditions were predicted to be an input power of 195 W, a C4F8 flow rate of 57 sccm, and a deposition time of 364 s; these were verified experimentally to have high accuracy. Demolding success requires medium-deposited film thickness (66-91 nm), and the thickness of the deposited films correlated strongly with deposition time. At moderate to high ranges, increased plasma power or gas flow rate promoted polymerization over reactive etching of the film. It was also found that small quantities of the fluorinated surface were transferred from the Si mold to the PDMS at each replication, entailing progressive wear of the fluorinated layer.

Effects of solution pH and electrical parameters on hydroxyapatite coatings deposited by a plasma-assisted electrophoresis technique.

PubMed

Nie, X; Leyland, A; Matthews, A; Jiang, J C; Meletis, E I

2001-12-15

Hydroxyapatite (HA) coatings can be deposited using a hybrid process of plasma electrolysis and electrophoresis, called plasma-assisted electrophoretic deposition (PEPD). HA aqueous suspensions with various pH values were prepared using a modified ultrasonic cleaning bath as an agitator/stirrer. Both DC and unbalanced AC power supplies were used to bias the titanium alloy substrate materials employed in this work. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffractometry (XRD), and Fourier transform infrared spectroscopy (FTIR) were used to observe and analyze coating morphology and microstructure. It was shown that the morphology and composition of the calcium phosphate coatings were significantly influenced by solution pH values; the level of "pure" HA in the coatings' composition corresponded to both solution pH and the type of power supply employed. Loss of hydroxyl radials (i.e., dehydroxylation), which degrades the performance of the hydroxyapatite coating in terms of long-term chemical and mechanical stability, can be virtually eliminated by a combination of high pH and unbalanced AC plasma power. In addition, the underlying TiO2 coatings used to support the HA layer (preproduced by plasma electrolysis process) have a nanoscaled (10-20 nm) polycrystalline structure. TEM studies also revealed a dense, continuous amorphous titania layer (10 nm in thickness) at the interface between the Ti alloy substrate and the TiO2 layer, which may play a role in improving the corrosion resistance of the substrate. Such a nanophase TiO2 layer (if used as a coating alone) may also provide a further improvement in osteoinductive properties, compared to a conventional TiO2 coating on the Ti alloy substrate. Copyright 2001 John Wiley & Sons, Inc. J Biomed Mater Res 57: 612-618, 2001

Surface Texturing-Plasma Nitriding Duplex Treatment for Improving Tribological Performance of AISI 316 Stainless Steel

PubMed Central

Lin, Naiming; Liu, Qiang; Zou, Jiaojuan; Guo, Junwen; Li, Dali; Yuan, Shuo; Ma, Yong; Wang, Zhenxia; Wang, Zhihua; Tang, Bin

2016-01-01

Surface texturing-plasma nitriding duplex treatment was conducted on AISI 316 stainless steel to improve its tribological performance. Tribological behaviors of ground 316 substrates, plasma-nitrided 316 (PN-316), surface-textured 316 (ST-316), and duplex-treated 316 (DT-316) in air and under grease lubrication were investigated using a pin-on-disc rotary tribometer against counterparts of high carbon chromium bearing steel GCr15 and silicon nitride Si3N4 balls. The variations in friction coefficient, mass loss, and worn trace morphology of the tested samples were systemically investigated and analyzed. The results showed that a textured surface was formed on 316 after electrochemical processing in a 15 wt % NaCl solution. Grooves and dimples were found on the textured surface. As plasma nitriding was conducted on a 316 substrate and ST-316, continuous and uniform nitriding layers were successfully fabricated on the surfaces of the 316 substrate and ST-316. Both of the obtained nitriding layers presented thickness values of more than 30 μm. The nitriding layers were composed of iron nitrides and chromium nitride. The 316 substrate and ST-316 received improved surface hardness after plasma nitriding. When the tribological tests were carried out under dry sliding and grease lubrication conditions, the tested samples showed different tribological behaviors. As expected, the DT-316 samples revealed the most promising tribological properties, reflected by the lowest mass loss and worn morphologies. The DT-316 received the slightest damage, and its excellent tribological performance was attributed to the following aspects: firstly, the nitriding layer had high surface hardness; secondly, the surface texture was able to capture wear debris, store up grease, and then provide continuous lubrication. PMID:28773996

Two-layer thermal barrier coating for turbine airfoils - furnace and burner rig test results

NASA Technical Reports Server (NTRS)

Stecura, S.

1976-01-01

A simple, two-layer plasma-sprayed thermal barrier coating system was developed which has the potential for protecting high temperature air-cooled gas turbine components. Of those coatings initially examined, the most promising system consisted of a Ni-16Cr-6Al-0.6Y (in wt%) thermal barrier coating (about 0.005 to 0.010 cm thick) and a ZrO2-12Y2O3 (in wt%) thermal barrier coating (about 0.025 to 0.064 cm thick). This thermal barrier substantially lowered the metal temperature of an air-cooled airfoil. The coating withstood 3,200 cycles (80 sec at 1,280 C surface temperature) and 275 cycles (1 hr at 1,490 C surface temperature) without cracking or spalling. No separation of the thermal barrier from the bond coating or the bond coating from the substrate was observed.

Growth of low temperature silicon nano-structures for electronic and electrical energy generation applications.

PubMed

Gabrielyan, Nare; Saranti, Konstantina; Manjunatha, Krishna Nama; Paul, Shashi

2013-02-15

This paper represents the lowest growth temperature for silicon nano-wires (SiNWs) via a vapour-liquid-solid method, which has ever been reported in the literature. The nano-wires were grown using plasma-enhanced chemical vapour deposition technique at temperatures as low as 150°C using gallium as the catalyst. This study investigates the structure and the size of the grown silicon nano-structure as functions of growth temperature and catalyst layer thickness. Moreover, the choice of the growth temperature determines the thickness of the catalyst layer to be used.The electrical and optical characteristics of the nano-wires were tested by incorporating them in photovoltaic solar cells, two terminal bistable memory devices and Schottky diode. With further optimisation of the growth parameters, SiNWs, grown by our method, have promising future for incorporation into high performance electronic and optical devices.

Growth of low temperature silicon nano-structures for electronic and electrical energy generation applications

PubMed Central

2013-01-01

This paper represents the lowest growth temperature for silicon nano-wires (SiNWs) via a vapour-liquid–solid method, which has ever been reported in the literature. The nano-wires were grown using plasma-enhanced chemical vapour deposition technique at temperatures as low as 150°C using gallium as the catalyst. This study investigates the structure and the size of the grown silicon nano-structure as functions of growth temperature and catalyst layer thickness. Moreover, the choice of the growth temperature determines the thickness of the catalyst layer to be used. The electrical and optical characteristics of the nano-wires were tested by incorporating them in photovoltaic solar cells, two terminal bistable memory devices and Schottky diode. With further optimisation of the growth parameters, SiNWs, grown by our method, have promising future for incorporation into high performance electronic and optical devices. PMID:23413969

Matrix formalism of electromagnetic wave propagation through multiple layers in the near-field region: application to the flat panel display.

PubMed

Lee, C Y; Lee, D E; Hong, Y K; Shim, J H; Jeong, C K; Joo, J; Zang, D S; Shim, M G; Lee, J J; Cha, J K; Yang, H G

2003-04-01

We have developed an electromagnetic (EM) wave propagation theory through a single layer and multiple layers in the near-field and far-field regions, and have constructed a matrix formalism in terms of the boundary conditions of the EM waves. From the shielding efficiency (SE) against EM radiation in the near-field region calculated by using the matrix formalism, we propose that the effect of multiple layers yields enhanced shielding capability compared to a single layer with the same total thickness in conducting layers as the multiple layers. We compare the intensities of an EM wave propagating through glass coated with conducting indium tin oxide (ITO) on one side and on both sides, applying it to the electromagnetic interference (EMI) shielding filter in a flat panel display such as a plasma display panel (PDP). From the measured intensities of EMI noise generated by a PDP loaded with ITO coated glass samples, the two-side coated glass shows a lower intensity of EMI noise compared to the one-side coated glass. The result confirms the enhancement of the SE due to the effect of multiple layers, as expected in the matrix formalism of EM wave propagation in the near-field region. In the far-field region, the two-side coated glass with ITO in multiple layers has a higher SE than the one-side coated glass with ITO, when the total thickness of ITO in both cases is the same.

Development of X-ray Microscopy at IPOE

NASA Astrophysics Data System (ADS)

Zhu, J.; Mu, B.; Huang, Q.; Huang, C.; Yi, S.; Zhang, Z.; Wang, F.; Wang, Z.; Chen, L.

2011-09-01

In order to meet the different requirements of applications in synchrotron radiation and plasma diagnosis in China, focusing and imaging optics based on Kirkpatrick-Baez (KB) mirrors, compound refractive lenses (CRLs), and multilayer Laue lenses (MLLs) were studied in our lab. A one-dimensional KB microscope using mirrors with a dual-periodic multilayer coating was developed. The multilayer mirror can reflect both 4.75 keV (Ti K-line) and 8.05 keV (Cu K-line) simultaneously, which makes alignment easier. For hard x-ray microscopy, CRL was studied. Using a SU-8 resist planar parabolic CRL, a focal line of 28.8-μm width was obtained. To focus hard x-rays to nanometer levels efficiently, an MLL was fabricated using a WSi2/Si multilayer. The MLL consists of 324 alternating WSi2 and Si layers with a total thickness of 7.9 μm. (Recently, a much thicker multilayer has been deposited with a layer number of n = 1582 and a total thickness of 27 μm.) After deposition, the sample was sliced and polished into an approximate ideal aspect ratio (depth of the zone plate to outmost layer thickness); the measured results show an intact structure remains, and the surface roughness of the cross section is about 0.4 nm after grinding and polishing processes.

Depth-Penetrating Temperature Measurements of Thermal Barrier Coatings Incorporating Thermographic Phosphors

NASA Technical Reports Server (NTRS)

Eldridge, Jeffrey I.; Bencic, Timothy J..; Allison, Stephen W.; Beshears, David L.

2003-01-01

Thermographic phosphors have been previously demonstrated to provide effective non-contact, emissivity-independent surface temperature measurements. Because of the translucent nature of thermal barrier coatings (TBCs), thermographic phosphor-based temperature measurements can be extended beyond the surface to provide depth-selective temperature measurements by incorporating the thermographic phosphor layer at the depth where the temperature measurement is desired. In this paper, thermographic phosphor (Y2O3:Eu) fluorescence decay time measurements are demonstrated to provide through-the-coating thickness temperature readings up to 1100 C with the phosphor layer residing beneath a 100 micron thick TBC (plasma-sprayed 8wt% yttria-stabilized zirconia). With an appropriately chosen excitation wavelength and detection configuration, it is shown that sufficient phosphor emission is generated to provide effective temperature measurements, despite the attenuation of both the excitation and emission intensities by the overlying TBC. This depth-penetrating temperature measurement capability should prove particularly useful for TBC diagnostics where a large thermal gradient is typically present across the TBC thickness. The fluorescence decay from the Y2O3:Eu layer exhibited both an initial short-term exponential rise and a longer-term exponential decay. The rise time constant was demonstrated to provide better temperature indication below 500 C while the decay time constant was a better indicator at higher temperatures.

Reflectance spectrum of plasmon waveguide interband cascade lasers and observation of the Berreman effect

NASA Astrophysics Data System (ADS)

Hinkey, Robert T.; Tian, Zhaobing; Yang, Rui Q.; Mishima, Tetsuya D.; Santos, Michael B.

2011-08-01

Noninvasive infrared reflectance measurements have been explored as a method for studying the optical properties of Si-doped cladding layers of plasmon waveguide interband cascade lasers. Measurements and theoretical simulations of the reflectance spectra were carried out on both the laser structures themselves, as well as highly doped InAs films grown on GaAs substrates. We have found that there is a sharp drop in the signal of the reflectance spectrum for p-polarized light oscillating near the plasma frequency. This is a manifestation of the so-called Berreman effect, which occurs at frequencies where the dielectric function approaches zero. This is distinct from the plasma edge feature seen in the reflectance spectrum of thick samples. The plasma frequencies of the highly doped layers were obtained by identifying the Berreman feature in the measured spectrum and fitting the spectrum to a modeled curve. Using a model for the effective mass, we were able to obtain measurements of the conduction electron concentration (in a range from 1018 to 1019 cm-3) in the waveguide cladding layers with values that were in good agreement with those found using Hall effect and SIMS measurements. The reflectance data was effectively used to achieve better calibration of the Si-doping during the growth of the n++-type InAs layers in the plasmon waveguide laser structures.

The development of self-expanding peripheral stent with ion-modified surface layer

NASA Astrophysics Data System (ADS)

Lotkov, Alexander I.; Kashin, Oleg A.; Kudryashov, Andrey N.; Krukovskii, Konstantin V.; Kuznetsov, Vladimir M.; Borisov, Dmitry P.; Kretov, Evgenii I.

2016-11-01

In work researches of chemical composition of surface layers of self-expanding stents of nickel-titanium (NiTi) and their functional and mechanical properties after plasma immersion processing by ions of silicon (Si). It is established that in the treatment in the inner and outer surfaces of stents formed doped silicon layer with a thickness of 80 nm. The formation of the doped layer does not impair the functional properties of the stent. At human body temperature, the stent is fully restore its shape after removing the deforming load. The resulting graph of loading of stents during their compression between parallel plates. The research results allow the conclusion that Si-doped stents are promising for treatment of peripheral vascular disease. However, related studies on laboratory animals are required.

Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy

PubMed Central

Xu, Zhongguang; Tian, Hao; Khanaki, Alireza; Zheng, Renjing; Suja, Mohammad; Liu, Jianlin

2017-01-01

Two-dimensional (2D) hexagonal boron nitride (h-BN), which has a similar honeycomb lattice structure to graphene, is promising as a dielectric material for a wide variety of potential applications based on 2D materials. Synthesis of high-quality, large-size and single-crystalline h-BN domains is of vital importance for fundamental research as well as practical applications. In this work, we report the growth of h-BN films on mechanically polished cobalt (Co) foils using plasma-assisted molecular beam epitaxy. Under appropriate growth conditions, the coverage of h-BN layers can be readily controlled by growth time. A large-area, multi-layer h-BN film with a thickness of 5~6 nm is confirmed by Raman spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy and transmission electron microscopy. In addition, the size of h-BN single domains is 20~100 μm. Dielectric property of as-grown h-BN film is evaluated by characterization of Co(foil)/h-BN/Co(contact) capacitor devices. Breakdown electric field is in the range of 3.0~3.3 MV/cm, which indicates that the epitaxial h-BN film has good insulating characteristics. In addition, the effect of substrate morphology on h-BN growth is discussed regarding different domain density, lateral size, and thickness of the h-BN films grown on unpolished and polished Co foils. PMID:28230178

Surface Alloying of SUS 321 Chromium-Nickel Steel by an Electron-Plasma Process

NASA Astrophysics Data System (ADS)

Ivanov, Yu. F.; Teresov, A. D.; Petrikova, E. A.; Krysina, O. V.; Ivanova, O. V.; Shugurov, V. V.; Moskvin, P. V.

2017-07-01

The mechanisms of forming nanostructured, nanophase layers are revealed and analyzed in austenitic steel subjected to surface alloying using an electron-plasma process. Nanostructured, nanophase layers up to 30 μm in thickness were formed by melting of the film/substrate system with an electron beam generated by a SOLO facility (Institute of High Current Electronics, SB RAS), Tomsk), which ensured crystallization and subsequent quenching at the cooling rates within the range 105-108 K/s. The surface was modified with structural stainless steel specimens (SUS 321 steel). The film/substrate system (film thickness 0.5 μm) was formed by a plasma-assisted vacuum-arc process by evaporating a cathode made from a sintered pseudoalloy of the following composition: Zr - 6 at.% Ti - 6 at.% Cu. The film deposition was performed in a QUINTA facility equipped with a PINK hot-cathode plasma source and DI-100 arc evaporators with accelerated cooling of the process cathode, which allowed reducing the size and fraction of the droplet phase in the deposited film. It is found that melting of the film/substrate system (Zr-Ti-Cu)/(SUS 321 steel) using a high-intensity pulsed electron beam followed by the high-rate crystallization is accompanied by the formation of α-iron cellular crystallization structure and precipitation of Cr2Zr, Cr3C2 and TiC particles on the cell boundaries, which as a whole allowed increasing microhardness by a factor of 1.3, Young's modulus - by a factor of 1.2, wear resistance - by a factor of 2.7, while achieving a three-fold reduction in the friction coefficient.

External control of photonic bands in a magnetized cold plasma

NASA Astrophysics Data System (ADS)

Kumar, N.; Singh, P. P.; Suthar, B.; Kumar, A.; Thapa, K. B.

2018-05-01

In this analysis, the effect of external rectangle-wave-like periodic magnetic field, on photonic bandgaps (PBGs) exhibited by bulk cold plasma, has been illustrated. It is found that the forbidden gap for normal incidence decreases with a decrease in the thickness ratio for a constant magnetic field. A new gap appears for TM polarization at oblique incidence that is attributed to the Bragg's interference of plasma layers and this new gap width depends on the incident angle as well as the magnitude of the magnetic field. There is also a shifting in gap locations depending on the magnitude of the magnetic field. It is demonstrated that external parameters like magnetic field strength and the ratio of two parts of spatial period along with incident angle can tune the PBGs in a magnetized cold plasma.

Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

DOE PAGES

Shi, Jianwei; Boccard, Mathieu; Holman, Zachary

2016-07-19

The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300°C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline siliconwafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450°C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450°C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltagemore » of over 710 mV and an efficiency of over 19%.« less

Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Jianwei; Boccard, Mathieu; Holman, Zachary

The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300°C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline siliconwafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450°C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450°C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltagemore » of over 710 mV and an efficiency of over 19%.« less

The automated array assembly task of the low-cost silicon solar array project, phase 2

NASA Technical Reports Server (NTRS)

Coleman, M. G.; Pryor, R. A.; Sparks, T. G.; Legge, R.; Saltzman, D. L.

1980-01-01

Several specific processing steps as part of a total process sequence for manufacturing silicon solar cells were studied. Ion implantation was identified as the preferred process step for impurity doping. Unanalyzed beam ion implantation was shown to have major cost advantages over analyzed beam implantation. Further, high quality cells were fabricated using a high current unanalyzed beam. Mechanically masked plasma patterning of silicon nitride was shown to be capable of forming fine lines on silicon surfaces with spacings between mask and substrate as great as 250 micrometers. Extensive work was performed on advances in plated metallization. The need for the thick electroless palladium layer was eliminated. Further, copper was successfully utilized as a conductor layer utilizing nickel as a barrier to copper diffusion into the silicon. Plasma etching of silicon for texturing and saw damage removal was shown technically feasible but not cost effective compared to wet chemical etching techniques.

Microstructure Changes of Plasma Spraying Tungsten Coatings on Cfc after Different Temperature Annealing

NASA Astrophysics Data System (ADS)

Liu, X.; Tamura, S.; Tokunaga, K.; Yoshida, N.; Noda, N.

2003-06-01

Thermal behaviors of tungsten coating of 0.5 mm thick with multi-layers interface of tungsten (W) and rhenium (Re) coated on CFC (CX-2002U) substrate by vacuum plasma spraying (VPS) technique were examined by annealing with an electron beam thermal load facility between 1200 °C and 2000 °C. Change of the microstructure was observed and its chemical composition was analyzed by EDS after annealing. It was observed that remarkable recrystallization of VPS-W occurred above 1400 °C. The structure of the multi-layers of W and Re become obscure by the mutual diffusion of W, Re and C above 1600°C and finally disappeared after annealing at 2000 °C for one hour. Very hard tungsten carbides are formed at the interface above 1600 °C and they were broadening with increasing annealing temperature and time.

Modeling of erosion and deposition patterns on C-W and W-Ta twin limiters exposed to the TEXTOR edge plasmas

NASA Astrophysics Data System (ADS)

Ohya, K.; Tanabe, T.; Rubel, M.; Wada, M.; Ohgo, T.; Hirai, T.; Philipps, V.; Kirschner, A.; Pospieszczyk, A.; Huber, A.; Sergienko, G.; Brezinsek, S.; Noda, N.

2004-08-01

The erosion and deposition patterns on tungsten and tantalum test limiters exposed to the TEXTOR deuterium plasma containing a small amount of C impurity are simulated with the modified EDDY code. At the very top of the W and Ta limiters, there occurs neither erosion nor deposition, but the erosion proceeds slowly along the surface. When approaching the edge, the surface is covered by a thick C layer, which shows a very sharp boundary similar to the observation in surface measurements. In the erosion zone, the re-deposited carbon forms a W (Ta)-C mixed layer with small C concentration. Assumptions for chemical erosion yields of ˜0.01 for W and <0.005 for Ta fit the calculated widths of the deposition zone to the experimentally determined values. Possible reasons for the difference between W and Ta are discussed.

Macular Choroidal Small-Vessel Layer, Sattler's Layer and Haller's Layer Thicknesses: The Beijing Eye Study.

PubMed

Zhao, Jing; Wang, Ya Xing; Zhang, Qi; Wei, Wen Bin; Xu, Liang; Jonas, Jost B

2018-03-13

To study macular choroidal layer thickness, 3187 study participants from the population-based Beijing Eye Study underwent spectral-domain optical coherence tomography with enhanced depth imaging for thickness measurements of the macular small-vessel layer, including the choriocapillaris, medium-sized choroidal vessel layer (Sattler's layer) and large choroidal vessel layer (Haller's layer). In multivariate analysis, greater thickness of all three choroidal layers was associated (all P < 0.05) with higher prevalence of age-related macular degeneration (AMD) (except for geographic atrophy), while it was not significantly (all P > 0.05) associated with the prevalence of open-angle glaucoma or diabetic retinopathy. There was a tendency (0.07 > P > 0.02) toward thinner choroidal layers in chronic angle-closure glaucoma. The ratio of small-vessel layer thickness to total choroidal thickness increased (P < 0.001; multivariate analysis) with older age and longer axial length, while the ratios of Sattler's layer and Haller's layer thickness to total choroidal thickness decreased. A higher ratio of small-vessel layer thickness to total choroidal thickness was significantly associated with a lower prevalence of AMD (early type, intermediate type, late geographic type). Axial elongation-associated and aging-associated choroidal thinning affected Haller's and Sattler's layers more markedly than the small-vessel layer. Non-exudative and exudative AMD, except for geographic atrophy, was associated with slightly increased choroidal thickness.

Deposition And Characterization Of Ultra Thin Diamond Like Carbon Films

NASA Astrophysics Data System (ADS)

Tomcik, B.

2010-07-01

Amorphous hydrogenated and/or nitrogenated carbon films, a-C:H/a-C:N, in overall thickness up to 2 nm are materials of choice as a mechanical and corrosion protection layer of the magnetic media in modern hard disk drive disks. In order to obtain high density and void-free films the sputtering technology has been replaced by different plasma and ion beam deposition techniques. Hydrocarbon gas precursors, like C2H2 or CH4 with H2 and N2 as reactive gases are commonly used in Kaufman DC ion and RF plasma beam sources. Optimum incident energy of carbon ions, C+, is up to 100 eV while the typical ion current densities during the film formation are in the mA/cm2 range. Other carbon deposition techniques, like filtered cathodic arc, still suffer from co-deposition of fine nanosized carbon clusters (nano dust) and their improvements are moving toward arc excitation in the kHz and MHz frequency range. Non-destructive film analysis like μ-Raman optical spectroscopy, spectroscopic ellipsometry, FTIR and optical surface analysis are mainly used in the carbon film characterization. Due to extreme low film thicknesses the surface enhanced Raman spectroscopy (SERS) with pre-deposited layer of Au can reduce the signal collection time and minimize photon-induced damage during the spectra acquisition. Standard approach in the μ-Raman film evaluation is the measurement of the position (shift) and area of D and G-peaks under the deconvoluted overall carbon spectrum. Also, a slope of the carbon spectrum in the 1000-2000 cm-1 wavenumber range is used as a measure of the hydrogen intake within a film. Diamond like carbon (DLC) film should possess elasticity and self-healing properties during the occasional crash of the read-write head flying only couple of nanometers above the spinning film. Film corrosion protection capabilities are mostly evaluated by electrochemical tests, potentio-dynamic and linear polarization method and by business environmental method. Corrosion mechanism, seen as a build-up of cobalt compounds on the top of DLC film, can be minimized with higher carbon film density (above 2.2g/cm3), voidfree film formation and lower film surface nano-roughness. Also, the carbide forming flash layer of Cr or Ti, with typical thicknesses of 0.5 nm may precede the DLC film deposition. Plasma beam sources should be cleaned periodically in oxygen or hydrogen gas flow to prevent incorporation of carbon sooth particles and nano-dust into the film. DLC film susceptibility to cobalt migration from the magnetic layer can be estimated using different techniques: by counting the number of corrosion spots per disk surface area, measuring the amount of cobalt on the surface with inductively coupled plasma or Rutherford backscattering spectroscopy.

Coatings Would Protect Polymers Against Atomic Oxygen

NASA Technical Reports Server (NTRS)

Banks, Bruce A.; Rutledge, Sharon K.

1995-01-01

Proposed interposition of layers of silver oxide tens to hundreds of angstroms thick between polymeric substrates and overlying films helps protect substrates against chemical attack by monatomic oxygen. In original application, polymer substrate would be, sheet of polyimide supporting array of solar photovoltaic cells on spacecraft in low orbit around Earth. Concept also applicable to protection of equipment in terrestrial laboratory and industrial vacuum and plasma chambers in which monatomic oxygen present.

Laser effects based optimal laser parameter identifications for paint removal from metal substrate at 1064 nm: a multi-pulse model

NASA Astrophysics Data System (ADS)

Han, Jinghua; Cui, Xudong; Wang, Sha; Feng, Guoying; Deng, Guoliang; Hu, Ruifeng

2017-10-01

Paint removal by laser ablation is favoured among cleaning techniques due to its high efficiency. How to predict the optimal laser parameters without producing damage to substrate still remains challenging for accurate paint stripping. On the basis of ablation morphologies and combining experiments with numerical modelling, the underlying mechanisms and the optimal conditions for paint removal by laser ablation are thoroughly investigated. Our studies suggest that laser paint removal is dominated by the laser vaporization effect, thermal stress effect and laser plasma effect, in which thermal stress effect is the most favoured while laser plasma effect should be avoided during removal operations. Based on the thermodynamic equations, we numerically evaluated the spatial distribution of the temperature as well as thermal stress in the paint and substrate under the irradiation of laser pulse at 1064 nm. The obtained curves of the paint thickness vs. threshold fluences can provide the reference standard of laser parameter selection in view of the paint layer with different thickness. A multi-pulse model is proposed and validated under a constant laser fluence to perfectly remove a thicker paint layer. The investigations and the methods proposed here might give hints to the efficient operations on the paint removal and lowering the risk of substrate damages.

Influence of Passivation Layers for Metal Grating-Based Quantum Well Infrared Photodetectors

NASA Astrophysics Data System (ADS)

Liu, Dong; Fu, Yong-Qi; Yang, Le-Chen; Zhang, Bao-Shun; Li, Hai-Jun; Fu, Kai; Xiong, Min

2012-06-01

To improve absorption of quantum well infrared photodetectors (QWIPs), a coupling layer with metallic grating is designed and fabricated above the quantum well. The metal grating is composed of 100 nm Au film on top, and a 20-nm Ti thin layer between the Au film and the sapphire substrate is coated as an adhesion/buffer layer. To protect the photodetector from oxidation and to decrease leakage, a SiO2 film is deposited by means of plasma-enhanced chemical vapor deposition. A value of about 800 nm is an optimized thickness for the SiO2 applied in the metallic grating-based mid-infrared QWIP. In addition, a QWIP passivation layer is studied experimentally. The results demonstrate that the contribution from the layer is positive for metal grating coupling with the quantum well. The closer the permittivity of the two dielectric layers (SiO2 and the passivation layers), and the closer the two transmission peaks, the greater the QWIP enhancement will be.

Enhanced Visible Transmittance of Thermochromic VO₂ Thin Films by SiO₂ Passivation Layer and Their Optical Characterization.

PubMed

Yu, Jung-Hoon; Nam, Sang-Hun; Lee, Ji Won; Boo, Jin-Hyo

2016-07-09

This paper presents the preparation of high-quality vanadium dioxide (VO₂) thermochromic thin films with enhanced visible transmittance (T vis ) via radio frequency (RF) sputtering and plasma enhanced chemical vapor deposition (PECVD). VO₂ thin films with high T vis and excellent optical switching efficiency (E os ) were successfully prepared by employing SiO₂ as a passivation layer. After SiO₂ deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO₂ coating, the phase transition temperature (T c ) of the prepared films was not affected. Compared with pristine VO₂, the total layer thickness after SiO₂ coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO₂ thin films showed a higher T vis value (λ 650 nm, 58%) compared with the pristine samples (λ 650 nm, 43%). This enhancement of T vis while maintaining high E os is meaningful for VO₂-based smart window applications.

SiGe derivatization by spontaneous reduction of aryl diazonium salts

NASA Astrophysics Data System (ADS)

Girard, A.; Geneste, F.; Coulon, N.; Cardinaud, C.; Mohammed-Brahim, T.

2013-10-01

Germanium semiconductors have interesting properties for FET-based biosensor applications since they possess high surface roughness allowing the immobilization of a high amount of receptors on a small surface area. Since SiGe combined low cost of Si and intrinsic properties of Ge with high mobility carriers, we focused the study on this particularly interesting material. The comparison of the efficiency of a functionalization process involving the spontaneous reduction of diazonium salts is studied on Si(1 0 0), SiGe and Ge semiconductors. XPS analysis of the functionalized surfaces reveals the presence of a covalent grafted layer on all the substrates that was confirmed by AFM. Interestingly, the modified Ge derivatives have still higher surface roughness after derivatization. To support the estimated thickness by XPS, a step measurement of the organic layers is done by AFM or by profilometer technique after a O2 plasma etching of the functionalized layer. This original method is well-adapted to measure the thickness of thin organic films on rough substrates such as germanium. The analyses show a higher chemical grafting on SiGe substrates compared with Si and Ge semiconductors.

Implementation and Development of the Incremental Hole Drilling Method for the Measurement of Residual Stress in Thermal Spray Coatings

NASA Astrophysics Data System (ADS)

Valente, T.; Bartuli, C.; Sebastiani, M.; Loreto, A.

2005-12-01

The experimental measurement of residual stresses originating within thick coatings deposited by thermal spray on solid substrates plays a role of fundamental relevance in the preliminary stages of coating design and process parameters optimization. The hole-drilling method is a versatile and widely used technique for the experimental determination of residual stress in the most superficial layers of a solid body. The consolidated procedure, however, can only be implemented for metallic bulk materials or for homogeneous, linear elastic, and isotropic materials. The main objective of the present investigation was to adapt the experimental method to the measurement of stress fields built up in ceramic coatings/metallic bonding layers structures manufactured by plasma spray deposition. A finite element calculation procedure was implemented to identify the calibration coefficients necessary to take into account the elastic modulus discontinuities that characterize the layered structure through its thickness. Experimental adjustments were then proposed to overcome problems related to the low thermal conductivity of the coatings. The number of calculation steps and experimental drilling steps were finally optimized.

CMUTs with High-K Atomic Layer Deposition Dielectric Material Insulation Layer

PubMed Central

Xu, Toby; Tekes, Coskun; Degertekin, F. Levent

2014-01-01

Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SixNy) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2 such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD SixNy and 100-nm HfO2 insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure. PMID:25474786

Stressor-layer-induced elastic strain sharing in SrTiO 3 complex oxide sheets

DOE PAGES

Tilka, J. A.; Park, J.; Ahn, Y.; ...

2018-02-26

A precisely selected elastic strain can be introduced in submicron-thick single-crystal SrTiO 3 sheets using a silicon nitride stressor layer. A conformal stressor layer deposited using plasma-enhanced chemical vapor deposition produces an elastic strain in the sheet consistent with the magnitude of the nitride residual stress. Synchrotron x-ray nanodiffraction reveals that the strain introduced in the SrTiO 3 sheets is on the order of 10 -4, matching the predictions of an elastic model. Using this approach to elastic strain sharing in complex oxides allows the strain to be selected within a wide and continuous range of values, an effect notmore » achievable in heteroepitaxy on rigid substrates.« less

Stressor-layer-induced elastic strain sharing in SrTiO 3 complex oxide sheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tilka, J. A.; Park, J.; Ahn, Y.

A precisely selected elastic strain can be introduced in submicron-thick single-crystal SrTiO 3 sheets using a silicon nitride stressor layer. A conformal stressor layer deposited using plasma-enhanced chemical vapor deposition produces an elastic strain in the sheet consistent with the magnitude of the nitride residual stress. Synchrotron x-ray nanodiffraction reveals that the strain introduced in the SrTiO 3 sheets is on the order of 10 -4, matching the predictions of an elastic model. Using this approach to elastic strain sharing in complex oxides allows the strain to be selected within a wide and continuous range of values, an effect notmore » achievable in heteroepitaxy on rigid substrates.« less

B{sub 4}C protective coating under irradiation by QSPA-T intensive plasma fluxes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buzhinskij, O. I.; Barsuk, V. A.; Begrambekov, L. B., E-mail: lbb@plasma.mephi.ru

The effect of the QSPA-T pulsed plasma irradiation on the crystalline boron carbide B{sub 4}C coating was examined. The duration of the rectangular plasma pulses was 0.5 ms with an interval of 5–10 min between pulses. The maximum power density in the central part of plasma stream was 1 GW/m{sup 2}. The coating thickness varied from 20 to 40 μm on different surface areas. Modification of the surface layers and transformation of the coating at elevated temperature under plasma pulse irradiation during four successive series of impulses are described. It is shown that the boron carbide coating withstood the fullmore » cycle of tests under irradiation with 100 plasma pulses with peak power density of 1GW/m{sup 2}. Constitutive surface deterioration was not detected and the boron carbide coating kept crystal structure B{sub 4}C throughout the irradiation zone at the surface depth no less 2 μm.« less

Target Fabrication Technology and New Functional Materials for Laser Fusion and Laser-Plasma Experiment

NASA Astrophysics Data System (ADS)

Nagai, Keiji; Norimatsu, Takayoshi; Izawa, Yasukazu

Target fabrication technique is a key issue of laser fusion. We present a comprehensive, up-to-data compilation of laser fusion target fabrication and relating new materials. To achieve highly efficient laser implosion, organic and inorganic highly spherical millimeter-sized capsules and cryogenic hydrogen layers inside should be uniform in diameter and thickness within sub-micrometer ˜ nanometer error. Porous structured targets and molecular cluster targets are required for laser-plasma experiments and applications. Various technologies and new materials concerning above purposes are summarized including fast-ignition targets, equation-of-state measurement targets, high energy ion generation targets, etc.

Experimental evidence for collisional shock formation via two obliquely merging supersonic plasma jets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Merritt, Elizabeth C., E-mail: emerritt@lanl.gov; Adams, Colin S.; University of New Mexico, Albuquerque, New Mexico 87131

We report spatially resolved measurements of the oblique merging of two supersonic laboratory plasma jets. The jets are formed and launched by pulsed-power-driven railguns using injected argon, and have electron density ∼10{sup 14} cm{sup −3}, electron temperature ≈1.4 eV, ionization fraction near unity, and velocity ≈40 km/s just prior to merging. The jet merging produces a few-cm-thick stagnation layer, as observed in both fast-framing camera images and multi-chord interferometer data, consistent with collisional shock formation [E. C. Merritt et al., Phys. Rev. Lett. 111, 085003 (2013)].

Electrical characterization of thin nanoscale SiOx layers grown on plasma hydrogenated silicon

NASA Astrophysics Data System (ADS)

Halova, E.; Kojuharova, N.; Alexandrova, S.; Szekeres, A.

2018-03-01

We analyzed the electrical characteristics of MOS structures with a SiOx layer grown on Si treated in plasma without heating. The hysteresis effect observed indicates the presence of traps spatially distributed into the oxide near the interface. The shift and the shape of the curves reveal a small oxide charge and low leakage currents, i.e. a high-quality dielectric layer. The generalized C-V curve was generated by applying the two-frequency methods on the C-V and G-V characteristics at frequencies in the range from 1 kHz to 300 kHz and by accounting for the series resistance and the leakage through the oxide layer. The energy spectra of the interface traps were calculated by comparing the experimental and the ideal theoretical C-V curves. The spectra showed the presence of interface traps with localized energy levels in the Si bandgap. These conclusions correlate well with the results on this oxide’s mechanical stress level, composition and Si-O ring structure, as well as on the interfacial region composition, obtained by our previous detailed multi-angle spectral ellipsometric studies. The ellipsometric data and the capacitance in strong accumulation of the C-V curves were used to calculate the thickness and the dielectric constants of the oxide layers.

Electric potential distributions at the interface between plasmasheet clouds

NASA Technical Reports Server (NTRS)

Evans, D. S.; Roth, M.; Lemaire, J.

1987-01-01

At the interface between two plasma clouds with different densities, temperatures, and/or bulk velocities, there are large charge separation electric fields which can be modeled in the framework of a collisionless theory for tangential discontinuities. Two different classes of layers were identified: the first one corresponds to (stable) ion layers which are thicker than one ion Lamor radius; the second one corresponds to (unstable) electron layers which are only a few electron Larmor radii thick. It is suggested that these thin electron layers with large electric potential gradients (up to 400 mV/m) are the regions where large-amplitude electrostatic waves are spontaneously generated. These waves scatter the pitch angles of the ambient plasmasheet electron into the atmospheric loss cone. The unstable electron layers can therefore be considered as the seat of strong pitch angle scattering for the primary auroral electrons.

Unintentional consequences of dual mode plasma reactors: Implications for upscaling lab-record silicon surface passivation by silicon nitride

NASA Astrophysics Data System (ADS)

Tong, Jingnan; To, Alexander; Lennon, Alison; Hoex, Bram

2017-08-01

Silicon nitride (SiN x ) synthesised by low-temperature plasma enhanced chemical vapour deposition (PECVD) is the most extensively used antireflection coating for crystalline silicon solar cells because of its tunable refractive index in combination with excellent levels of surface and bulk passivation. This has attracted a significant amount of research on developing SiN x films towards an optimal electrical and optical performance. Typically, recipes are first optimised in lab-scale reactors and subsequently, the best settings are transferred to high-throughput reactors. In this paper, we show that for one particular, but widely used, PECVD reactor configuration this upscaling is severely hampered by an important experimental artefact. Specifically, we report on the unintentional deposition of a dual layer structure in a dual mode AK 400 plasma reactor from Roth & Rau which has a significant impact on its surface passivation performance. It is found that the radio frequency (RF) substrate bias ignites an unintentional depositing plasma before the ignition of the main microwave (MW) plasma. This RF plasma deposits a Si-rich intervening SiN x layer (refractive index = 2.4) while using a recipe for stoichiometric SiN x . This layer was found to be 18 nm thick in our case and had an extraordinary impact on the Si surface passivation, witnessed by a reduction in effective surface recombination velocity from 22.5 to 6.2 cm/s. This experimental result may explain some “out of the ordinary” excellent surface passivation results reported recently for nearly stoichiometric SiN x films and has significant consequences when transferring these results to high-throughput deposition systems.

Controlling Fluences of Reactive Species Produced by Multipulse DBDs onto Wet Tissue: Frequency and Liquid Thickness

NASA Astrophysics Data System (ADS)

Tian, Wei; Kushner, Mark J.

2015-09-01

Tissue covered by a thin liquid layer treated by atmospheric pressure plasmas for biomedical applications ultimately requires a reproducible protocol for human healthcare. The outcomes of wet tissue treatment by dielectric barrier discharges (DBDs) depend on the plasma dose which determines the integral fluences of radicals and ions onto the tissue. These fluences are controlled in part by frequency and liquid thickness. In this paper, we report on results from a computational investigation of multipulse DBDs interacting with wet tissue. The DBDs were simulated for 100 stationary or random streamers at different repetition rates and liquid thicknesses followed by 10 s to 2 min of afterglow. At 100 Hz, NOaq and OHaq are mixed by randomly striking streamers, although they have different rates of solvation. NOaq is nearly completely consumed by reactions with OHaq at the liquid surface. Only H2O2aq, produced through OHaq mutual reactions, survives to reach the tissue. After 100 pulses, the liquid becomes ozone-rich, in which the nitrous ion, NO2-aq, is converted to the nitric ion, NO3-aq. Reducing the pulse frequency to 10 Hz results in significant fluence of NOaq to the tissue as NOaq can escape during the interpulse period from the liquid surface where OHaq is formed. For the same reason, NO2-aq can also reach deeper into the liquid at lower frequency. Frequency and thickness of the liquid are methods to control the plasma produced aqueous species to the underlying tissue. Work supported by DOE (DE-SC0001319) and NSF (CHE-1124724).

Report on the deuterium retention in CVD coated W on SiC in support of the Ultramet Company’s Small Business Innovation Research (SBIR) project: SOW DE-FG02-07ER84941

DOE Office of Scientific and Technical Information (OSTI.GOV)

Masashi Shimada

2012-06-01

A tungsten (W) coated (0.0005-inch thickness) silicon carbide (SiC) (1.0-inch diameter and 0.19-inch thickness) sample was exposed to a divertor relevant high-flux (~1022 m-2s-1) deuterium plasma at 200 and 400°C in the Idaho National Laboratory’s (INL’s) Tritium Plasma Experiment (TPE), and the total deuterium retention was subsequently measured via the thermal desorption spectroscopy (TDS) method. The deuterium retentions were 6.4x1019 m-2 and 1.7x1020 m-2, for 200 and 400°C exposure, respectively. The Tritium Migration Analysis Program (TMAP) was used to analyze the measured TDS spectrum to investigate the deuterium behavior in the W coated SiC, and the results indicated that mostmore » of the deuterium was trapped in the W coated layer even at 400°C. This thin W layer (0.0005-inch ~ 13µm thickness) prevented deuterium ions from bombarding directly into the SiC substrate, minimizing erosion of SiC and damage creation via ion bombardment. The shift in the D desorption peak in the TDS spectra from 200 C to 400°C can be attributed to D migration to the bulk material. This unexpectedly low deuterium retention and short migration might be due to the porous nature of the tungsten coating, which can decrease the solution concentration of deuterium atoms.« less

Corrosion Behavior of Plasma-Passivated Cu

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barbour, J.C.; Braithwaite, J.W.; Son, K.A.

1999-07-09

A new approach is being pursued to study corrosion in Cu alloy systems by using combinatorial analysis combined with microscopic experimentation (the Combinatorial Microlab) to determine mechanisms for copper corrosion in air. Corrosion studies are inherently difficult because of complex interactions between materials and environment, forming a multidimensional phase space of corrosion variables. The Combinatorial Microlab was specifically developed to address the mechanism of Cu sulfidation, which is an important reliability issue for electronic components. This approach differs from convention by focusing on microscopic length scales, the relevant scale for corrosion. During accelerated aging, copper is exposed to a varietymore » of corrosive environments containing sulfidizing species that cause corrosion. A matrix experiment was done to determine independent and synergistic effects of initial Cu oxide thickness and point defect density. The CuO{sub x} was controlled by oxidizing Cu in an electron cyclotron resonance (ECR) O{sub 2} plasma, and the point defect density was modified by Cu ion irradiation. The matrix was exposed to 600 ppb H{sub 2}S in 65% relative humidity air atmosphere. This combination revealed the importance of oxide quality in passivating Cu and prevention of the sulfidizing reaction. A native oxide and a defect-laden ECR oxide both react at 20 C to form a thick Cu{sub 2}S layer after exposure to H{sub 2}S, while different thicknesses of as-grown ECR oxide stop the formation of Cu{sub 2}S. The species present in the ECR oxide will be compared to that of an air oxide, and the sulfide layer growth rate will be presented.« less

Comparing XPS on bare and capped ZrN films grown by plasma enhanced ALD: Effect of ambient oxidation

NASA Astrophysics Data System (ADS)

Muneshwar, Triratna; Cadien, Ken

2018-03-01

In this article we compare x-ray photoelectron spectroscopy (XPS) measurements on bare- and capped- zirconium nitride (ZrN) films to investigate the effect of ambient sample oxidation on the detected bound O in the form of oxide ZrO2 and/or oxynitride ZrOxNy. ZrN films in both bare- and Al2O3/AlN capped- XPS samples were grown by plasma-enhanced atomic layer deposition (PEALD) technique using tetrakis dimethylamino zirconium (TDMAZr) precursor, forming gas (5% H2, rest N2) inductively coupled plasma (ICP), and as received research grade process gases under identical process conditions. Capped samples were prepared by depositing 1 nm thick PEALD AlN on ZrN, followed by additional deposition of 1 nm thick ALD Al2O3, without venting of ALD reactor. On bare ZrN sample at room temperature, spectroscopic ellipsometry (SE) measurements with increasing ambient exposure times (texp) showed a self-limiting surface oxidation with the oxide thickness (dox) approaching 3.7 ± 0.02 nm for texp > 120 min. In XPS data measured prior to sample sputtering (tsput = 0), ZrO2 and ZrOxNy were detected in bare- samples, whereas only ZrN and Al2O3/AlN from capping layer were detected in capped- samples. For bare-ZrN samples, appearance of ZrO2 and ZrOxNy up to sputter depth (dsput) of 15 nm in depth-profile XPS data is in contradiction with measured dox = 3.7 nm, but explained from sputtering induced atomic inter-diffusion within analyzed sample. Appearance of artifacts in the XPS spectra from moderately sputtered (dsput = 0.2 nm and 0.4 nm) capped-ZrN sample, provides an evidence to ion-bombardment induced modifications within analyzed sample.

Effect of Pulse Detonation-Plasma Technology Treatment on T8 Steel Microstructures

NASA Astrophysics Data System (ADS)

Yu, Jiuming; Zhang, Linwei; Liu, Keming; Lu, Lei; Lu, Deping; Zhou, Haitao

2017-12-01

T8 steel surfaces were treated by pulse detonation-plasma technology (PDT) at capacitance values of 600, 800, and 1000 μF, and the effects of PDT were analyzed using x-ray diffraction, scanning electron microscopy, transmission electron microscopy, electron back-scattered diffraction, and micro-hardness tester and friction wear tester. The surface of T8 steel is first smoothed out, and then, craters are formed due to the inhomogeneity of the PDT energy and targeting during PDT treatment. The initial martensite in the T8 steel surface layer changes to austenite, and Fe3N is formed due to nitriding. The thickness of the modified layer, which is composed of columnar and fine grain structures, increases with the increasing capacity. Preferential orientation occurred in the {110} 〈 001 〉 direction in the modified layer, and the number of low-angle grain boundaries increased significantly after PDT treatment. The micro-hardness and wear resistance of the T8 steel was improved by PDT treatment, even doubled after the treatment with the capacitance of 1000 μF.

Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che

2012-06-29

GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign ofmore » cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.« less

Influence of atmospheric plasma on physicochemical properties of vapor-grown graphite nanofibers.

PubMed

Seo, Min-Kang; Park, Soo-Jin; Lee, Sang-Kwan

2005-05-01

Vapor-grown graphite nanofibers (GNFs) were modified by plasma treatments using low-pressure plasmas with different gases (Ar gas only and/or Ar/O2 gases), flow rates, pressures, and powers. Surface characterizations and morphologies of the GNFs after plasma treatment were investigated by X-ray photoelectron spectroscopy (XPS), contact angle, titration, and transmission electron microscopy (TEM) measurements. Also, the investigation of thermomechanical behavior and impact strengths of the GNFs/epoxy composites was performed by dynamic-mechanical thermal analysis (DMTA) and Izod impact testing, respectively. The plasma treatment of the fibers changed the surface morphologies by forming a layer with a thickness on the order of 1 nm, mainly consisting of oxygen functional groups such as hydroxyl, carbonyl, and carboxyl groups. After functionalization of the complete surfaces, further plasma treatment did not enhance the superficial oxygen content but slightly changed the portions of the functional groups. Also, the composites with plasma-treated GNFs showed an increase in T(g) and impact strength compared to the composites containing the same amount of plasma-untreated GNFs.

Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

NASA Astrophysics Data System (ADS)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

2017-02-01

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3) and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J. Vac. Sci. Technol., A 32, 020603 (2014) and D. Metzler et al., J. Vac. Sci. Technol., A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si but is limited with regard to control over material etching selectivity. Ion energy over the 20-30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.

Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haider, Ali; Kayaci, Fatma; Uyar, Tamer

2014-09-01

Aluminum nitride (AlN)/boron nitride (BN) bishell hollow nanofibers (HNFs) have been fabricated by successive atomic layer deposition (ALD) of AlN and sequential chemical vapor deposition (CVD) of BN on electrospun polymeric nanofibrous template. A four-step fabrication process was utilized: (i) fabrication of polymeric (nylon 6,6) nanofibers via electrospinning, (ii) hollow cathode plasma-assisted ALD of AlN at 100 °C onto electrospun polymeric nanofibers, (iii) calcination at 500 °C for 2 h in order to remove the polymeric template, and (iv) sequential CVD growth of BN at 450 °C. AlN/BN HNFs have been characterized for their chemical composition, surface morphology, crystal structure, and internal nanostructuremore » using X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy, and selected area electron diffraction. Measurements confirmed the presence of crystalline hexagonal BN and AlN within the three dimensional (3D) network of bishell HNFs with relatively low impurity content. In contrast to the smooth surface of the inner AlN layer, outer BN coating showed a highly rough 3D morphology in the form of BN nano-needle crystallites. It is shown that the combination of electrospinning and plasma-assisted low-temperature ALD/CVD can produce highly controlled multi-layered bishell nitride ceramic hollow nanostructures. While electrospinning enables easy fabrication of nanofibrous template, self-limiting reactions of plasma-assisted ALD and sequential CVD provide control over the wall thicknesses of AlN and BN layers with sub-nanometer accuracy.« less

Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining.

PubMed

Sano, Yasuhisa; Yamamura, Kazuya; Mimura, Hidekazu; Yamauchi, Kazuto; Mori, Yuzo

2007-08-01

Metal-oxide semiconductor field-effect transistors fabricated on a silicon-on-insulator (SOI) wafer operate faster and at a lower power than those fabricated on a bulk silicon wafer. Scaling down, which improves their performances, demands thinner SOI wafers. In this article, improvement on the thinning of SOI wafers by numerically controlled plasma chemical vaporization machining (PCVM) is described. PCVM is a gas-phase chemical etching method in which reactive species generated in atmospheric-pressure plasma are used. Some factors affecting uniformity are investigated and methods for improvements are presented. As a result of thinning a commercial 8 in. SOI wafer, the initial SOI layer thickness of 97.5+/-4.7 nm was successfully thinned and made uniform at 7.5+/-1.5 nm.

Mechanical modeling and characteristic study for the adhesive contact of elastic layered media

NASA Astrophysics Data System (ADS)

Zhang, Yuyan; Wang, Xiaoli; Tu, Qiaoan; Sun, Jianjun; Ma, Chenbo

2017-11-01

This paper investigates the adhesive contact between a smooth rigid sphere and a smooth elastic layered medium with different layer thicknesses, layer-to-substrate elastic modulus ratios and adhesion energy ratios. A numerical model is established by combining elastic responses of the contact system and an equation of equivalent adhesive contact pressure which is derived based on the Hamaker summation method and the Lennard-Jones intermolecular potential law. Simulation results for hard layer cases demonstrate that variation trends of the pull-off force with the layer thickness and elastic modulus ratio are complex. On one hand, when the elastic modulus ratio increases, the pull-off force decreases at smaller layer thicknesses, decreases at first and then increases at middle layer thicknesses, while increases monotonously at larger layer thicknesses. On the other hand, the pull-off force decreases at first and then increases with the increase in the layer thickness. Furthermore, a critical layer thickness above which the introduction of hard layer cannot reduce adhesion and an optimum layer thickness under which the pull-off force reaches a minimum are found. Both the critical and optimum layer thicknesses become larger with an increase in the Tabor parameter, while they tend to decrease with the increase in the elastic modulus ratio. In addition, the pull-off force increases sublinearly with the adhesion energy ratio if the layer thickness and elastic modulus ratio are fixed.

Enhanced Laser-Driven Ion Acceleration by Superponderomotive Electrons Generated from Near-Critical-Density Plasma

NASA Astrophysics Data System (ADS)

Bin, J. H.; Yeung, M.; Gong, Z.; Wang, H. Y.; Kreuzer, C.; Zhou, M. L.; Streeter, M. J. V.; Foster, P. S.; Cousens, S.; Dromey, B.; Meyer-ter-Vehn, J.; Zepf, M.; Schreiber, J.

2018-02-01

We report on the experimental studies of laser driven ion acceleration from a double-layer target where a near-critical density target with a few-micron thickness is coated in front of a nanometer-thin diamondlike carbon foil. A significant enhancement of proton maximum energies from 12 to ˜30 MeV is observed when a relativistic laser pulse impinges on the double-layer target under linear polarization. We attributed the enhanced acceleration to superponderomotive electrons that were simultaneously measured in the experiments with energies far beyond the free-electron ponderomotive limit. Our interpretation is supported by two-dimensional simulation results.

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr

2014-09-15

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as themore » AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.« less

Semi-analytic model of plasma-jet-driven magneto-inertial fusion

DOE PAGES

Langendorf, Samuel J.; Hsu, Scott C.

2017-03-01

A semi-analytic model for plasma-jet-driven magneto-inertial fusion is presented here. Compressions of a magnetized plasma target by a spherically imploding plasma liner are calculated in one dimension (1D), accounting for compressible hydrodynamics and ionization of the liner material, energy losses due to conduction and radiation, fusion burn and alpha deposition, separate ion and electron temperatures in the target, magnetic pressure, and fuel burn-up. Results show 1D gains of 3–30 at spherical convergence ratio <15 and 20–40 MJ of liner energy, for cases in which the liner thickness is 1 cm and the initial radius of a preheated magnetized target ismore » 4 cm. Some exploration of parameter space and physics settings is presented. The yields observed suggest that there is a possibility of igniting additional dense fuel layers to reach high gain.« less

Advanced Simulation Technology to Design Etching Process on CMOS Devices

NASA Astrophysics Data System (ADS)

Kuboi, Nobuyuki

2015-09-01

Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

Effects of the Process Parameters on the Microstructure and Properties of Nitrided 17-4PH Stainless Steel

NASA Astrophysics Data System (ADS)

Wang, Jun; Lin, Yuanhua; Zeng, Dezhi; Yan, Jing; Fan, Hongyuan

2013-04-01

The effects of process parameters on the microstructure, microhardness, and dry-sliding wear behavior of plasma nitrided 17-4PH stainless steel were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and wear testing. The results show that a wear-resistant nitrided layer was formed on the surface of direct current plasma nitrided 17-4PH martensitic stainless steel. The microstructure and thickness of the nitrided layer is dependent on the treatment temperature rather than process pressure. XRD indicated that a single α N phase was formed during nitriding at 623 K (350 °C). When the temperature increased, the α N phase disappeared and CrN transformed in the nitrided layer. The hardness measurement demonstrated that the hardness of the stainless substrate steel increased from 320 HV0.1 in the untreated condition increasing to about 1275HV0.1 after nitriding 623 K (350 °C)/600 pa/4 hours. The extremely high values of the microhardness achieved by the great misfit-induced stress fields associated with the plenty of dislocation group and stacking fault. Dry-sliding wear resistance was improved by DC plasma nitriding. The best wear-resistance performance of a nitrided sample was obtained after nitriding at 673 K (350 °C), when the single α N-phase was produced and there were no CrN precipitates in the nitrided layer.

Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn(acac){sub 2} reactions and enhancement by H{sub 2} and Ar plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Nicholas R.; Sun, Huaxing; Sharma, Kashish

2016-09-15

Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin(II) acetylacetonate [Sn(acac){sub 2}] as the reactants. Film thicknesses were monitored versus number of ALE reaction cycles at 275 °C using in situ spectroscopic ellipsometry (SE). A low etch rate of ∼0.07 Å/cycle was measured during etching of the first 40 Å of the film. This small etch rate corresponded with the AlO{sub x}N{sub y} layer on the AlN film. The etch rate then increased to ∼0.36 Å/cycle for the pure AlN films. In situ SE experiments established the HF and Sn(acac){submore » 2} exposures that were necessary for self-limiting surface reactions. In the proposed reaction mechanism for thermal AlN ALE, HF fluorinates the AlN film and produces an AlF{sub 3} layer on the surface. The metal precursor, Sn(acac){sub 2}, then accepts fluorine from the AlF{sub 3} layer and transfers an acac ligand to the AlF{sub 3} layer in a ligand-exchange reaction. The possible volatile etch products are SnF(acac) and either Al(acac){sub 3} or AlF(acac){sub 2}. Adding a H{sub 2} plasma exposure after each Sn(acac){sub 2} exposure dramatically increased the AlN etch rate from 0.36 to 1.96 Å/cycle. This enhanced etch rate is believed to result from the ability of the H{sub 2} plasma to remove acac surface species that may limit the AlN etch rate. The active agent from the H{sub 2} plasma is either hydrogen radicals or radiation. Adding an Ar plasma exposure after each Sn(acac){sub 2} exposure increased the AlN etch rate from 0.36 to 0.66 Å/cycle. This enhanced etch rate is attributed to either ions or radiation from the Ar plasma that may also lead to the desorption of acac surface species.« less

Role of the endothelial surface layer in neutrophil recruitment.

PubMed

Marki, Alex; Esko, Jeffrey D; Pries, Axel R; Ley, Klaus

2015-10-01

Neutrophil recruitment in most tissues is limited to postcapillary venules, where E- and P-selectins are inducibly expressed by venular endothelial cells. These molecules support neutrophil rolling via binding of PSGL-1 and other ligands on neutrophils. Selectins extend ≤ 38 nm above the endothelial plasma membrane, and PSGL-1 extends to 50 nm above the neutrophil plasma membrane. However, endothelial cells are covered with an ESL composed of glycosaminoglycans that is ≥ 500 nm thick and has measurable resistance against compression. The neutrophil surface is also covered with a surface layer. These surface layers would be expected to completely shield adhesion molecules; thus, neutrophils should not be able to roll and adhere. However, in the cremaster muscle and in many other models investigated using intravital microscopy, neutrophils clearly roll, and their rolling is easily and quickly induced. This conundrum was thought to be resolved by the observation that the induction of selectins is accompanied by ESL shedding; however, ESL shedding only partially reduces the ESL thickness (to 200 nm) and thus is insufficient to expose adhesion molecules. In addition to its antiadhesive functions, the ESL also presents neutrophil arrest-inducing chemokines. ESL heparan sulfate can also bind L-selectin expressed by the neutrophils, which contributes to rolling and arrest. We conclude that ESL has both proadhesive and antiadhesive functions. However, most previous studies considered either only the proadhesive or only the antiadhesive effects of the ESL. An integrated model for the role of the ESL in neutrophil rolling, arrest, and transmigration is needed. © Society for Leukocyte Biology.

Role of the endothelial surface layer in neutrophil recruitment

PubMed Central

Marki, Alex; Esko, Jeffrey D.; Pries, Axel R.; Ley, Klaus

2015-01-01

Neutrophil recruitment in most tissues is limited to postcapillary venules, where E- and P-selectins are inducibly expressed by venular endothelial cells. These molecules support neutrophil rolling via binding of PSGL-1 and other ligands on neutrophils. Selectins extend ≤38 nm above the endothelial plasma membrane, and PSGL-1 extends to 50 nm above the neutrophil plasma membrane. However, endothelial cells are covered with an ESL composed of glycosaminoglycans that is ≥500 nm thick and has measurable resistance against compression. The neutrophil surface is also covered with a surface layer. These surface layers would be expected to completely shield adhesion molecules; thus, neutrophils should not be able to roll and adhere. However, in the cremaster muscle and in many other models investigated using intravital microscopy, neutrophils clearly roll, and their rolling is easily and quickly induced. This conundrum was thought to be resolved by the observation that the induction of selectins is accompanied by ESL shedding; however, ESL shedding only partially reduces the ESL thickness (to 200 nm) and thus is insufficient to expose adhesion molecules. In addition to its antiadhesive functions, the ESL also presents neutrophil arrest-inducing chemokines. ESL heparan sulfate can also bind L-selectin expressed by the neutrophils, which contributes to rolling and arrest. We conclude that ESL has both proadhesive and antiadhesive functions. However, most previous studies considered either only the proadhesive or only the antiadhesive effects of the ESL. An integrated model for the role of the ESL in neutrophil rolling, arrest, and transmigration is needed. PMID:25979432

Barrier SiO2-like coatings for archaeological artefacts preservation

NASA Astrophysics Data System (ADS)

Prochazka, M.; Blahova, L.; Krcma, F.

2016-10-01

Thin film chemical vapour deposition technique has been used for more than 50 years. Introducing organo-silicones as precursors, e.g. hexamethyldisiloxane (HMDSO) or tetraethyl orthosilicate (TEOS), brought new possibilities to this method. Barrier properties of thin films have become an important issue, especially for army and emergency services as well as for food and drink manufacturers. Our work is focused on protective HMDSO thin films for encapsulating cleaned archaeological artefacts, preventing the corrosion from destroying these historical items.Thin films are deposited via plasma enhanced chemical vapour deposition (PECVD) technique using low pressure capacitively coupled pasma in flow regime. Oxygen transmission rate (OTR) measurement was chosen as the most important one for characterization of barrier properties of deposited thin films. Lowest OTR reached for 50 nm thin film thickness was 120 cm3 m-2 atm-1 day-1. Samples were also analyzed by Fourier Transform Infrared spectrometry (FTIR) to determine their composition. Optical emission spectra and thin film thickness were measured during the deposition process. We optimized the deposition parameters for barrier layers by implementation of pulsed mode of plasma and argon plasma pre-treatment into the process.

INTERACTION OF LASER RADIATION WITH MATTER. LASER PLASMA: The mechanism of the drilling of holes in vertical metallic plates by cw CO2 laser radiation

NASA Astrophysics Data System (ADS)

Likhanskii, V. V.; Loboiko, A. I.; Antonova, G. F.; Krasyukov, A. G.; Sayapin, V. P.

1999-02-01

The possibility of making a hole in a vertical plate with the aid of laser radiation at a surface temperature not exceeding the boiling point is analysed neglecting the vapour pressure. The mechanism of the degradation of the liquid layer involving a reduction of its thickness, as a result of the redistribution of the molten mass owing to the operation of the force of gravity and of thermocapillary convection, is examined. The theoretical dependence of the critical size of the molten zone on the plate thickness is obtained and a comparison is made with experimental data.

Electron affinity of cubic boron nitride terminated with vanadium oxide

NASA Astrophysics Data System (ADS)

Yang, Yu; Sun, Tianyin; Shammas, Joseph; Kaur, Manpuneet; Hao, Mei; Nemanich, Robert J.

2015-10-01

A thermally stable negative electron affinity (NEA) for a cubic boron nitride (c-BN) surface with vanadium-oxide-termination is achieved, and its electronic structure was analyzed with in-situ photoelectron spectroscopy. The c-BN films were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition employing BF3 and N2 as precursors. Vanadium layers of ˜0.1 and 0.5 nm thickness were deposited on the c-BN surface in an electron beam deposition system. Oxidation of the metal layer was achieved by an oxygen plasma treatment. After 650 °C thermal annealing, the vanadium oxide on the c-BN surface was determined to be VO2, and the surfaces were found to be thermally stable, exhibiting an NEA. In comparison, the oxygen-terminated c-BN surface, where B2O3 was detected, showed a positive electron affinity of ˜1.2 eV. The B2O3 evidently acts as a negatively charged layer introducing a surface dipole directed into the c-BN. Through the interaction of VO2 with the B2O3 layer, a B-O-V layer structure would contribute a dipole between the O and V layers with the positive side facing vacuum. The lower enthalpy of formation for B2O3 is favorable for the formation of the B-O-V layer structure, which provides a thermally stable surface dipole and an NEA surface.

Solid charged-core model of ball lightning

NASA Astrophysics Data System (ADS)

Muldrew, D. B.

2010-01-01

In this study, ball lightning (BL) is assumed to have a solid, positively-charged core. According to this underlying assumption, the core is surrounded by a thin electron layer with a charge nearly equal in magnitude to that of the core. A vacuum exists between the core and the electron layer containing an intense electromagnetic (EM) field which is reflected and guided by the electron layer. The microwave EM field applies a ponderomotive force (radiation pressure) to the electrons preventing them from falling into the core. The energetic electrons ionize the air next to the electron layer forming a neutral plasma layer. The electric-field distributions and their associated frequencies in the ball are determined by applying boundary conditions to a differential equation given by Stratton (1941). It is then shown that the electron and plasma layers are sufficiently thick and dense to completely trap and guide the EM field. This model of BL is exceptional in that it can explain all or nearly all of the peculiar characteristics of BL. The ES energy associated with the core charge can be extremely large which can explain the observations that occasionally BL contains enormous energy. The mass of the core prevents the BL from rising like a helium-filled balloon - a problem with most plasma and burning-gas models. The positively charged core keeps the negatively charged electron layer from diffusing away, i.e. it holds the ball together; other models do not have a mechanism to do this. The high electrical charges on the core and in the electron layer explains why some people have been electrocuted by BL. Experiments indicate that BL radiates microwaves upon exploding and this is consistent with the model. The fact that this novel model of BL can explain these and other observations is strong evidence that the model should be taken seriously.

Silver nanoparticles as a key feature of a plasma polymer composite layer in mitigation of charge injection into polyethylene under dc stress

NASA Astrophysics Data System (ADS)

Milliere, L.; Maskasheva, K.; Laurent, C.; Despax, B.; Boudou, L.; Teyssedre, G.

2016-01-01

The aim of this work is to limit charge injection from a semi-conducting electrode into low density polyethylene (LDPE) under dc field by tailoring the polymer surface using a silver nanoparticles-containing layer. The layer is composed of a plane of silver nanoparticles embedded in a semi-insulating organosilicon matrix deposited on the polyethylene surface by a plasma process. Size, density and surface coverage of the nanoparticles are controlled through the plasma process. Space charge distribution in 300 μm thick LDPE samples is measured by the pulsed-electroacoustic technique following a short term (step-wise voltage increase up to 50 kV mm-1, 20 min in duration each, followed by a polarity inversion) and a longer term (up to 12 h under 40 kV mm-1) protocols for voltage application. A comparative study of space charge distribution between a reference polyethylene sample and the tailored samples is presented. It is shown that the barrier effect depends on the size distribution and the surface area covered by the nanoparticles: 15 nm (average size) silver nanoparticles with a high surface density but still not percolating form an efficient barrier layer that suppress charge injection. It is worthy to note that charge injection is detected for samples tailored with (i) percolating nanoparticles embedded in organosilicon layer; (ii) with organosilicon layer only, without nanoparticles and (iii) with smaller size silver particles (<10 nm) embedded in organosilicon layer. The amount of injected charges in the tailored samples increases gradually in the samples ranking given above. The mechanism of charge injection mitigation is discussed on the basis of complementary experiments carried out on the nanocomposite layer such as surface potential measurements. The ability of silver clusters to stabilize electrical charges close to the electrode thereby counterbalancing the applied field appears to be a key factor in explaining the charge injection mitigation effect.

Giant magnetoresistance in ion beam deposited spin-valve films with specular enhancement

NASA Astrophysics Data System (ADS)

Sant, S.; Mao, M.; Kools, J.; Koi, K.; Iwasaki, H.; Sahashi, M.

2001-06-01

Three different techniques, natural oxidation, remote plasma oxidation and low energy ion beam oxidation, have been proved to be equally effective in forming nano-oxide layers (NOLs) in spin-valve films for specular enhancement of giant magnetoresistance (GMR) effect. GMR values over 12% have been routinely obtained in spin-valve films with NOL, corresponding to a 30% specular enhancement over those without NOL. The consistency and robustness of the oxidation processes has been demonstrated by a very large GMR value ˜19% in a dual spin-valve film with the NOLs formed in both pinned layers, the oscillatory dependence of the interlayer coupling field on Cu layer thickness in specular enhanced spin-valve films and the uniform and repeatable film performance over 5 in. substrates.

Water Desalination Using Nanoporous Single-Layer Graphene with Tunable Pore Size

DOE PAGES

Surwade, Sumedh P.; Smirnov, Sergei N.; Vlassiouk, Ivan V.; ...

2015-03-23

Graphene has great potential to serve as a separation membrane due to its unique properties such as chemical and mechanical stability, flexibility and most importantly its one-atom thickness. In this study, we demonstrate first experimental evidence of the use of single-layer porous graphene as a desalination membrane. Nanometer-sized pores are introduced into single layer graphene using a convenient oxygen plasma etching process that permits tuning of the pore size. The resulting porous graphene membrane exhibited high rejection of salt ions and rapid water transport, thus functioning as an efficient water desalination membrane. Salt rejection selectivity of nearly 100% and exceptionallymore » high water fluxes exceeding 105 g m-2 s-1 at 40 C were measured using saturated water vapor as a driving force.« less

Computational design of short pulse laser driven iron opacity experiments

DOE PAGES

Martin, M. E.; London, R. A.; Goluoglu, S.; ...

2017-02-23

Here, the resolution of current disagreements between solar parameters calculated from models and observations would benefit from the experimental validation of theoretical opacity models. Iron's complex ionic structure and large contribution to the opacity in the radiative zone of the sun make iron a good candidate for validation. Short pulse lasers can be used to heat buried layer targets to plasma conditions comparable to the radiative zone of the sun, and the frequency dependent opacity can be inferred from the target's measured x-ray emission. Target and laser parameters must be optimized to reach specific plasma conditions and meet x-ray emissionmore » requirements. The HYDRA radiation hydrodynamics code is used to investigate the effects of modifying laser irradiance and target dimensions on the plasma conditions, x-ray emission, and inferred opacity of iron and iron-magnesium buried layer targets. It was determined that plasma conditions are dominantly controlled by the laser energy and the tamper thickness. The accuracy of the inferred opacity is sensitive to tamper emission and optical depth effects. Experiments at conditions relevant to the radiative zone of the sun would investigate the validity of opacity theories important to resolving disagreements between solar parameters calculated from models and observations.« less

Computational design of short pulse laser driven iron opacity experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martin, M. E.; London, R. A.; Goluoglu, S.

Here, the resolution of current disagreements between solar parameters calculated from models and observations would benefit from the experimental validation of theoretical opacity models. Iron's complex ionic structure and large contribution to the opacity in the radiative zone of the sun make iron a good candidate for validation. Short pulse lasers can be used to heat buried layer targets to plasma conditions comparable to the radiative zone of the sun, and the frequency dependent opacity can be inferred from the target's measured x-ray emission. Target and laser parameters must be optimized to reach specific plasma conditions and meet x-ray emissionmore » requirements. The HYDRA radiation hydrodynamics code is used to investigate the effects of modifying laser irradiance and target dimensions on the plasma conditions, x-ray emission, and inferred opacity of iron and iron-magnesium buried layer targets. It was determined that plasma conditions are dominantly controlled by the laser energy and the tamper thickness. The accuracy of the inferred opacity is sensitive to tamper emission and optical depth effects. Experiments at conditions relevant to the radiative zone of the sun would investigate the validity of opacity theories important to resolving disagreements between solar parameters calculated from models and observations.« less

Tungsten oxide thin film exposed to low energy D and He plasma: evidence for a thermal enhancement of the erosion yield

NASA Astrophysics Data System (ADS)

Hijazi, Hussein; Martin, C.; Roubin, P.; Addab, Y.; Cabie, C.; Pardanaud, C.; Bannister, M.; Meyer, F.

2017-10-01

Nanocrystalline tungsten oxide thin films (25 nm - 250 nm thickness) produced by thermal oxidation of a tungsten substrate were exposed to low energy D and He plasma. Low energy D plasma exposure (11 eV/D+) of these films have resulted in the formation of a tungsten bronze (DxWO3) clearly observed by Raman microscopy. D plasma bombardment (4 1021 m-2) has also induced a color change of the oxide layer which is similar to the well-known electro-chromic effect and has been named ``plasma-chromic effect''. To unravel physical and chemical origins of the modifications observed under exposure, similar tungsten oxide films were also exposed to low energy helium plasma (20 eV/He+) . Due to the low fluence (4 1021 m-2) and low ion energy (20 eV), at room temperature, He exposure has induced only very few morphological and structural modifications. On the contrary, at 673 K, significant erosion is observed, which gives evidence for an unexpected thermal enhancement of the erosion yield. We present here new results concerning He beam exposures at low fluence (4 1021 m-2) varying the He+ energy from 20 eV to 320 eV to measure the tungsten oxide sputtering threshold energy. Detailed analyses before/after exposure to describe the D and He interaction with the oxide layer, its erosion and structural modification at the atomic and micrometer scale will be presented.

Preparation of erosion and deposition investigations on plasma facing components in Wendelstein 7-X

NASA Astrophysics Data System (ADS)

Dhard, C. P.; Balden, M.; Braeuer, T.; Brezinsek, S.; Coenen, J. W.; Dudek, A.; Ehrke, G.; Hathiramani, D.; Klose, S.; König, R.; Laux, M.; Linsmeier, Ch; Manhard, A.; Masuzaki, S.; Mayer, M.; Motojima, G.; Naujoks, D.; Neu, R.; Neubauer, O.; Rack, M.; Ruset, C.; Schwarz-Selinger, T.; Pedersen, T. Sunn; Tokitani, M.; Unterberg, B.; Yajima, M.; W7-X Team1, The

2017-12-01

In the Wendelstein 7-X stellarator with its twisted magnetic geometry the investigation of plasma wall interaction processes in 3D plasma configurations is an important research subject. For the upcoming operation phase i.e. OP1.2, three different types of material probes have been installed within the plasma vessel for the erosion/deposition investigations in selected areas with largely different expected heat load levels, namely, ≤10 MW m-2 at the test divertor units (TDU), ≤500 kW m-2 at the baffles, heat shields and toroidal closures and ≤100 kW m-2 at the stainless steel wall panels. These include 18 exchangeable target elements at TDU, about 30 000 screw heads at graphite tiles and 44 wafer probes on wall panels, coated with marker layers. The layer thicknesses, surface morphologies and the impurity contents were pre-characterized by different techniques and subjected to various qualification tests. The positions of these probes were fixed based on the strike line locations on the divertor predicted by field line diffusion and EMC3/EIRENE modeling calculations for the OP1.2 plasma configurations and availability of locations on panels in direct view of the plasma. After the first half of the operation phase i.e. OP1.2a the probes will be removed to determine the erosion/deposition pattern by post-mortem analysis and replaced by a new set for the second half of the operation phase, OP1.2b.

Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

PubMed Central

2014-01-01

Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Transmission electron microscopy observation revealed the formation of Si QDs after 900°C annealing. The optical properties of the Si QDs/SiC multilayers were studied, and the optical band gap deduced from the optical absorption coefficient result is 1.48 eV. Moreover, the p-i-n structure with n-a-Si/i-(Si QDs/SiC multilayers)/p-Si was fabricated, and the carrier transportation mechanism was investigated. The p-i-n structure was used in a solar cell device. The cell had the open circuit voltage of 532 mV and the power conversion efficiency (PCE) of 6.28%. PACS 81.07.Ta; 78.67.Pt; 88.40.jj PMID:25489285

Impacts of age and sex on retinal layer thicknesses measured by spectral domain optical coherence tomography with Spectralis.

PubMed

Nieves-Moreno, María; Martínez-de-la-Casa, José M; Morales-Fernández, Laura; Sánchez-Jean, Rubén; Sáenz-Francés, Federico; García-Feijoó, Julián

2018-01-01

To examine differences in individual retinal layer thicknesses measured by spectral domain optical coherence tomography (SD-OCT) (Spectralis®) produced with age and according to sex. Cross-sectional, observational study. The study was conducted in 297 eyes of 297 healthy subjects aged 18 to 87 years. In one randomly selected eye of each participant the volume and mean thicknesses of the different macular layers were measured by SD-OCT using the instrument's macular segmentation software. Volume and mean thickness of macular retinal nerve fiber layer (mRNFL), ganglion cell layer (GCL), inner plexiform layer (IPL), inner nuclear layer (INL), outer plexiform layer (OPL), outer nuclear layer (ONL), retinal pigmentary epithelium (RPE) and photoreceptor layer (PR). Retinal thickness was reduced by 0.24 μm for every one year of age. Age adjusted linear regression analysis revealed mean GCL, IPL, ONL and PR thickness reductions and a mean OPL thickness increase with age. Women had significantly lower mean GCL, IPL, INL, ONL and PR thicknesses and volumes and a significantly greater mRNFL volume than men. The thickness of most retinal layers varies both with age and according to sex. Longitudinal studies are needed to determine the rate of layer thinning produced with age.

Effects of CH3OH Addition on Plasma Electrolytic Oxidation of AZ31 Magnesium Alloys

NASA Astrophysics Data System (ADS)

He, Yongyi; Chen, Li; Yan, Zongcheng; Zhang, Yalei

2015-09-01

Plasma electrolytic oxidation (PEO) films on AZ31 magnesium alloys were prepared in alkaline silicate electrolytes (base electrolyte) with the addition of different volume concentrations of CH3OH, which was used to adjust the thickness of the vapor sheath. The compositions, morphologies, and thicknesses of ceramic layers formed with different CH3OH concentrations were determined via X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), and scanning electron microscopy (SEM). Corrosion behavior of the oxide films was evaluated in 3.5 wt.% NaCl solution using potentiodynamic polarization tests. PEO coatings mainly comprised Mg, MgO, and Mg2SiO4. The addition of CH3OH in base electrolytes affected the thickness, pores diameter, and Mg2SiO4 content in the films. The films formed in the electrolyte containing 12% CH3OH exhibited the highest thickness. The coatings formed in the electrolyte containing different concentrations of CH3OH exhibited similar corrosion resistance. The energy consumption of PEO markedly decreased upon the addition of CH3OH to the electrolytes. The result is helpful for energy saving in the PEO process. supported by National Natural Science Foundation of China (No. 21376088), the Project of Production, Education and Research, Guangdong Province and Ministry of Education (Nos. 2012B09100063, 2012A090300015), and Guangzhou Science and Technology Plan Projects of China (No. 2014Y2-00042)

Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers.

PubMed

Andringa, Anne-Marije; Perrotta, Alberto; de Peuter, Koen; Knoops, Harm C M; Kessels, Wilhelmus M M; Creatore, Mariadriana

2015-10-14

Encapsulation of organic (opto-)electronic devices, such as organic light-emitting diodes (OLEDs), photovoltaic cells, and field-effect transistors, is required to minimize device degradation induced by moisture and oxygen ingress. SiNx moisture permeation barriers have been fabricated using a very recently developed low-temperature plasma-assisted atomic layer deposition (ALD) approach, consisting of half-reactions of the substrate with the precursor SiH2(NH(t)Bu)2 and with N2-fed plasma. The deposited films have been characterized in terms of their refractive index and chemical composition by spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier-transform infrared spectroscopy (FTIR). The SiNx thin-film refractive index ranges from 1.80 to 1.90 for films deposited at 80 °C up to 200 °C, respectively, and the C, O, and H impurity levels decrease when the deposition temperature increases. The relative open porosity content of the layers has been studied by means of multisolvent ellipsometric porosimetry (EP), adopting three solvents with different kinetic diameters: water (∼0.3 nm), ethanol (∼0.4 nm), and toluene (∼0.6 nm). Irrespective of the deposition temperature, and hence the impurity content in the SiNx films, no uptake of any adsorptive has been observed, pointing to the absence of open pores larger than 0.3 nm in diameter. Instead, multilayer development has been observed, leading to type II isotherms that, according to the IUPAC classification, are characteristic of nonporous layers. The calcium test has been performed in a climate chamber at 20 °C and 50% relative humidity to determine the intrinsic water vapor transmission rate (WVTR) of SiNx barriers deposited at 120 °C. Intrinsic WVTR values in the range of 10(-6) g/m2/day indicate excellent barrier properties for ALD SiNx layers as thin as 10 nm, competing with that of state-of-the-art plasma-enhanced chemical vapor-deposited SiNx layers of a few hundred nanometers in thickness.

Non-destructive prediction of enteric coating layer thickness and drug dissolution rate by near-infrared spectroscopy and X-ray computed tomography.

PubMed

Ariyasu, Aoi; Hattori, Yusuke; Otsuka, Makoto

2017-06-15

The coating layer thickness of enteric-coated tablets is a key factor that determines the drug dissolution rate from the tablet. Near-infrared spectroscopy (NIRS) enables non-destructive and quick measurement of the coating layer thickness, and thus allows the investigation of the relation between enteric coating layer thickness and drug dissolution rate. Two marketed products of aspirin enteric-coated tablets were used in this study, and the correlation between the predicted coating layer thickness and the obtained drug dissolution rate was investigated. Our results showed correlation for one product; the drug dissolution rate decreased with the increase in enteric coating layer thickness, whereas, there was no correlation for the other product. Additional examination of the distribution of coating layer thickness by X-ray computed tomography (CT) showed homogenous distribution of coating layer thickness for the former product, whereas the latter product exhibited heterogeneous distribution within the tablet, as well as inconsistent trend in the thickness distribution between the tablets. It was suggested that this heterogeneity and inconsistent trend in layer thickness distribution contributed to the absence of correlation between the layer thickness of the face and side regions of the tablets, which resulted in the loss of correlation between the coating layer thickness and drug dissolution rate. Therefore, the predictability of drug dissolution rate from enteric-coated tablets depended on the homogeneity of the coating layer thickness. In addition, the importance of micro analysis, X-ray CT in this study, was suggested even if the macro analysis, NIRS in this study, are finally applied for the measurement. Copyright © 2017 Elsevier B.V. All rights reserved.

Unexpected impact of radiation friction: enhancing production of longitudinal plasma waves.

PubMed

Gelfer, Evgeny; Elkina, Nina; Fedotov, Alexander

2018-04-24

We study the penetration of ultra-intense (intensity I [Formula: see text] 10 23-24  W/cm 2 ) circularly polarized laser pulses into a thick subcritical plasma layer with accounting for radiation friction. We show that radiation pressure is enhanced due to radiation friction in the direction transverse to the laser pulse propagation, and that for stronger and longer laser pulses this mechanism dominates over the ordinary ponderomotive pressure, thus resulting in a substantionaly stronger charge separation than anticipated previously. We give estimates of the effect and compare them with the results of one and two dimensional particle-in-cell simulations. This effect can be important for laser-based acceleration schemes.

Hydrogen-related defects in Al2O3 layers grown on n-type Si by the atomic layer deposition technique

NASA Astrophysics Data System (ADS)

Kolkovsky, Vl.; Stübner, R.

2018-04-01

The electrical properties of alumina films with thicknesses varying from 15 nm to 150 nm, grown by the atomic layer deposition technique on n-type Si, were investigated. We demonstrated that the annealing of the alumina layers in argon (Ar) or hydrogen (H) atmosphere at about 700 K resulted in the introduction of negatively charged defects irrespective of the type of the substrate. These defects were also observed in samples subjected to a dc H plasma treatment at temperatures below 400 K, whereas they were not detected in as-grown samples and in samples annealed in Ar atmosphere at temperatures below 400 K. The concentration of these defects increased with a higher H content in the alumina films. In good agreement with theory we assigned these defects to interstitial H-related defects.

Chromatic control in coextruded layered polymer microlenses

NASA Astrophysics Data System (ADS)

Crescimanno, Michael; Oder, Tom N.; Andrews, James H.; Zhou, Chuanhong; Petrus, Joshua B.; Merlo, Cory; Bagheri, Cameron; Hetzel, Connor; Tancabel, James; Singer, Kenneth D.; Baer, Eric

2014-12-01

We describe the formation, characterization and theoretical understanding of microlenses comprised of alternating polystyrene and polymethylmethacrylate layers produced by multilayer coextrusion. These lenses are fabricated by photolithography, using a grayscale mask followed by plasma etching, so that the refractive index alternation of the bilayer stack appears across the radius of the microlens. The alternating quarter-wave thick layers form a one-dimensional photonic crystal whose dispersion augments the material dispersion, allowing one to sculpt the chromatic dispersion of the lens by adjusting the layered structure. Using Huygen's principle, we model our experimental measurements of the focal length of these lenses across the reflection band of the multilayer polymer film from which the microlens is fashioned. For a 56 micron diameter multilayered lens of focal length 300 microns, we measured a nearly 25 percent variation in the focal length across a shallow, 50 nm-wide reflection band.

Trace and surface analysis of ceramic layers of solid oxide fuel cells by mass spectrometry.

PubMed

Becker, J S; Breuer, U; Westheide, J; Saprykin, A I; Holzbrecher, H; Nickel, H; Dietze, H J

1996-06-01

For the trace analysis of impurities in thick ceramic layers of a solid oxide fuel cell (SOFC) sensitive solid-state mass spectrometric methods, such as laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) and radiofrequency glow discharge mass spectrometry (rf-GDMS) have been developed and used. In order to quantify the analytical results of LA-ICP-MS, the relative sensitivity coefficients of elements in a La(0.6)Sr(0.35)MnO(3) matrix have been determined using synthetic standards. Secondary ion mass spectrometry (SIMS) - as a surface analytical method - has been used to characterize the element distribution and diffusion profiles of matrix elements on the interface of a perovskite/Y-stabilized ZrO(2) layer. The application of different mass spectrometric methods for process control in the preparation of ceramic layers for the SOFC is described.

Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

PubMed

Sharma, N; Periasamy, C; Chaturvedi, N

2018-07-01

In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

Microphysics of Magnetic Reconnection: Experiments on RSX and Simulation

NASA Astrophysics Data System (ADS)

Intrator, T. P.; Furno, I. G.; Hsu, S. C.; Lapenta, G.; Ricci, P.

2003-12-01

Using a unique LANL laboratory facility, the Reconnection Scaling Experiment (RSX), and a state-of-the-art LANL numerical code, CELESTE3D, we are beginning an experimental and numerical study of the microphysics of 2D and 3D "fast magnetic reconnection". RSX at Los Alamos National Laboratory is already operational and producing research plasmas. In RSX, the radial boundaries and thus the reconnection geometry are not constrained to two dimensions. It is capable of investigating 3D magnetic reconnection occurring in a free-boundary 3D linear geometry during the coalescence of two parallel current plasma channels, which are produced by using plasma gun technology. RSX can also scale the guide field (ion gyroradius) independently of other reconnection parameters. Frontier reconnection research invokes (1) `anomalous' microinstability-induced resistivity, which enhances dissipation rates inside the reconnection layer and (2) terms of the two-fluid generalized Ohm's law which introduce whistler and kinetic Alfvén wave dynamics. The two-fluid approach predicts (a) a two-spatial-scale spatial structure of the reconnection layer, with outer (inner) thickness equal to the ion (electron) skin depth and (b) Hall currents in the reconnection plane and out-of-plane magnetic field on the electron scale. We will show spatially resolved RSX experimental measurements of the dynamics of the reconnection layer, and take advantage of our scaling capabilities to address the applicability of the two-fluid approach.

Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature

NASA Astrophysics Data System (ADS)

Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Imai, Daichi; Hwang, Eun-Sook

2016-12-01

The growth kinetics of nominally one-monolayer (˜1-ML)-thick InN wells on/in the +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the impacts of excess In atoms and/or In droplets at a high growth temperature of 650 °C. Even at a constant growth temperature of 650 °C, the thickness of the sheet-island-like InN-well layers could be controlled/varied from 1-ML to 2-ML owing to the effect of excess In atoms and/or In droplets accumulated during growth. The possible growth mechanism is discussed based on the ring-shaped bright cathodoluminescence emissions introduced along the circumference of the In droplets during growth. The effective thermal stability of N atoms below the bilayer adsorbed In atoms was increased by the presence of In droplets, resulting in the freezing of 2-ML-thick InN wells into the GaN matrix. It therefore became possible to study the difference between the emission properties of 1-ML and 2-ML-thick InN wells/GaN matrix quantum wells (QWs) having similar GaN matrix crystallinity grown at the same temperature. InN/GaN QW-samples grown under widely different In + N* supply conditions characteristically separated into two groups with distinctive emission-peak wavelengths originating from 1-ML and 2-ML-thick InN wells embedded in the GaN matrix. Reflecting the growth mechanism inherent to the D-ALEp of InN on/in the +c-GaN matrix at high temperature, either 1-ML or 2-ML-thick "binary" InN well layers tended to be frozen into the GaN matrix rather InGaN random ternary-alloys. Both the structural quality and uniformity of the 1-ML InN well sample were better than those of the 2-ML InN well sample, essentially owing to the quite thin critical thickness of around 1-ML arising from the large lattice mismatch of InN and GaN.

Corrosion Behavior of Active Screen Plasma Nitrided 38CrMoAl Steel under Marine Environment

NASA Astrophysics Data System (ADS)

Yang, Li; He, Yongyong; Mao, JunYuan; Zhang, Lei

2017-10-01

The 38CrMoAl steels were nitrided at different temperatures for 7 h using active screen plasma discharge. The analysis showed that the thick compound layer composed of ɛ-Fe2-3N and γ‧-Fe4N was formed on the surface. The corrosion behavior was evaluated by measuring the anodic polarization curves in natural sea water (similar 3.5% NaCl solution), and observation of corroded surface were conducted. The electromechanical measurements indicated that the corrosion potential of the nitrided specimens shifted to a nobler value compared to that of untreated specimens. Passive regions were also observed in the polarization curves for all the nitrided specimens. These results indicate that active screen plasma nitriding can enhance the corrosion resistance of the 38CrMoAl steel under marine environment.

Enhanced Visible Transmittance of Thermochromic VO2 Thin Films by SiO2 Passivation Layer and Their Optical Characterization

PubMed Central

Yu, Jung-Hoon; Nam, Sang-Hun; Lee, Ji Won; Boo, Jin-Hyo

2016-01-01

This paper presents the preparation of high-quality vanadium dioxide (VO2) thermochromic thin films with enhanced visible transmittance (Tvis) via radio frequency (RF) sputtering and plasma enhanced chemical vapor deposition (PECVD). VO2 thin films with high Tvis and excellent optical switching efficiency (Eos) were successfully prepared by employing SiO2 as a passivation layer. After SiO2 deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO2 coating, the phase transition temperature (Tc) of the prepared films was not affected. Compared with pristine VO2, the total layer thickness after SiO2 coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO2 thin films showed a higher Tvis value (λ 650 nm, 58%) compared with the pristine samples (λ 650 nm, 43%). This enhancement of Tvis while maintaining high Eos is meaningful for VO2-based smart window applications. PMID:28773679

Deposition of single and layered amorphous fluorocarbon films by C8F18 PECVD

NASA Astrophysics Data System (ADS)

Yamauchi, Tatsuya; Mizuno, Kouichiro; Sugawara, Hirotake

2008-10-01

Amorphous fluorocarbon films were deposited by plasma-enhanced chemical vapor deposition (PECVD) using C8F18 in closed system at C8F18 pressures 0.1--0.3 Torr, deposition times 1--30 min and plasma powers 20--200 W@. The layered films were composed by repeated PECVD processes. We compared `two-layered' and `intermittently deposited' films, which were made by the PECVD, respectively, with and without renewal of the gas after the deposition of the first layer. The interlayer boundary was observed in the layered films, and that of the intermittently deposited films showed a tendency to be clearer when the deposition time until the interruption of the PECVD was shorter. The film thickness increased linearly in the beginning of the PECVD and it turned down after 10--15 min, that was similar between the single and intermittently deposited films. It was considered that large precursors made at a low decomposition degree of C8F18 contributed to the film deposition in the early phase and that the downturn was due to the development of the C8F18 decomposition. This explanation on the deposition mechanism agrees qualitatively with our experimental data of pressure change and optical emission spectra during the deposition. This work is supported by Grant-in-Aid from Japan Society for the Promotion of Science.

Porous Architecture of SPS Thick YSZ Coatings Structured at the Nanometer Scale (~50 nm)

NASA Astrophysics Data System (ADS)

Bacciochini, Antoine; Montavon, Ghislain; Ilavsky, Jan; Denoirjean, Alain; Fauchais, Pierre

2010-01-01

Suspension plasma spraying (SPS) is a fairly recent technology that is able to process sub-micrometer-sized or nanometer-sized feedstock particles and permits the deposition of coatings thinner (from 20 to 100 μm) than those resulting from conventional atmospheric plasma spraying (APS). SPS consists of mechanically injecting within the plasma flow a liquid suspension of particles of average diameter varying between 0.02 and 1 μm. Due to the large volume fraction of the internal interfaces and reduced size of stacking defects, thick nanometer- or sub-micrometer-sized coatings exhibit better properties than conventional micrometer-sized ones (e.g., higher coefficients of thermal expansion, lower thermal diffusivity, higher hardness and toughness, better wear resistance, among other coating characteristics and functional properties). They could hence offer pertinent solutions to numerous emerging applications, particularly for energy production, energy saving, etc. Coatings structured at the nanometer scale exhibit nanometer-sized voids. Depending upon the selection of operating parameters, among which plasma power parameters (operating mode, enthalpy, spray distance, etc.), suspension properties (particle size distribution, powder mass percentage, viscosity, etc.), and substrate characteristics (topology, temperature, etc.), different coating architectures can be manufactured, from dense to porous layers, from connected to non-connected network. Nevertheless, the discrimination of porosity in different classes of criteria such as size, shape, orientation, specific surface area, etc., is essential to describe the coating architecture. Moreover, the primary steps of the coating manufacturing process affect significantly the coating porous architecture. These steps need to be further understood. Different types of imaging experiments were performed to understand, describe and quantify the pore level of thick finely structured ceramics coatings.

Harnessing of radio frequency discharge for production of biologically compatible coatings for ophthalmology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abdullin, I.Sh.; Bragin, V.E.; Bykanov, A.N.

Gas discharge plasma modification of polymer materials and metals is one of the known physical approaches for improving of materials biocompatibility in ophthalmology and surgery. The surface treatment in RF discharges can be effectively realized in the discharge afterglow and in the discharge region itself too. This modification method is more convenient and produces more uniform surfaces in comparison with other discharge types. The carried out experiments and published up to now results show that interaction of UV radiation, fluxes of ions, electrons and metastable particles with material`s surface changes chemical composition and surface structure. The exerting of these agentsmore » on the sample surface produces the following effects. There are processes of physical and plasma-chemical surface etching producing effective surface cleaning of different types of contaminations. It may be surface contaminations by hydrocarbons because of preliminary surface contacts with biological or physical bodies. It may be surface contaminations caused by characteristic properties of chemical technology too. There is a surface layer with thickness from some angstroms up to few hundreds of angstroms. The chemical content and structure of this layer is distinguished from the bulk polymer properties. The presence of such {open_quotes}technological{close_quotes} contaminations produces the layer of material substantially differing from the base polymer. The basic layer physical and chemical properties for example, gas permeation rate may substantially differ from the base polymer. Attempts to clean the surface from these contaminations by chemical methods (solutions) have not been successful and produced contaminations of more deep polymer layers. So the plasma cleaning is the most profitable method of polymer treatment for removing the surface contaminations. The improving of wettability occurs during this stage of treatment.« less

Hydroxyapatite-coated Ti-6Al-4V part 2: the effects of post-deposition heat treatment at low temperatures.

PubMed

Lynn, A K; DuQuesnay, D L

2002-05-01

The present investigation explores the effects of a 90-h post-deposition annealing treatment at 400 degrees C in air on the crystallographic and chemical properties of a plasma-sprayed hydroxyapatite (HA) coating, the thickness and composition of the interfacial oxide layer, and the fatigue behaviour of the underlying Ti-6Al-4V substrate. X-ray diffraction analysis revealed that significant recovery of the crystalline HA structure occurred as a result of the treatment, however, as compared with results obtained through treatment at higher temperatures, recovery obtained through use of the present treatment was incomplete. X-ray photoelectron spectroscopy analysis showed no changes in the constituents of the oxide layer, with the oxide species TiO2, Al2O3, V2O5, V2O3, and VO2 present on both the as-sprayed and the heat-treated substrates. A change in film thickness was observed, however, as evidenced by a change in colour from opaque bronze to dark purple. The fatigue resistance of the substrate was found to be significantly reduced by the heat treatment, with the lives of heat-treated coupons with coatings of all thicknesses closely resembling those of as-sprayed coupons with thick HA coatings and uncoated stress-relieved coupons presented in Part I of this study. Stress relief was identified as the most likely cause of these reductions.

Plasma facing materials performance under ITER-relevant mitigated disruption photonic heat loads

NASA Astrophysics Data System (ADS)

Klimov, N. S.; Putrik, A. B.; Linke, J.; Pitts, R. A.; Zhitlukhin, A. M.; Kuprianov, I. B.; Spitsyn, A. V.; Ogorodnikova, O. V.; Podkovyrov, V. L.; Muzichenko, A. D.; Ivanov, B. V.; Sergeecheva, Ya. V.; Lesina, I. G.; Kovalenko, D. V.; Barsuk, V. A.; Danilina, N. A.; Bazylev, B. N.; Giniyatulin, R. N.

2015-08-01

PFMs (Plasma-facing materials: ITER grade stainless steel, beryllium, and ferritic-martensitic steels) as well as deposited erosion products of PFCs (Be-like, tungsten, and carbon based) were tested in QSPA under photonic heat loads relevant to those expected from photon radiation during disruptions mitigated by massive gas injection in ITER. Repeated pulses slightly above the melting threshold on the bulk materials eventually lead to a regular, "corrugated" surface, with hills and valleys spaced by 0.2-2 mm. The results indicate that hill growth (growth rate of ∼1 μm per pulse) and sample thinning in the valleys is a result of melt-layer redistribution. The measurements on the 316L(N)-IG indicate that the amount of tritium absorbed by the sample from the gas phase significantly increases with pulse number as well as the modified layer thickness. Repeated pulses significantly below the melting threshold on the deposited erosion products lead to a decrease of hydrogen isotopes trapped during the deposition of the eroded material.

Erosion and Modifications of Tungsten-Coated Carbon and Copper Under High Heat Flux

NASA Astrophysics Data System (ADS)

Liu, Xiang; S, Tamura; K, Tokunaga; N, Yoshida; Zhang, Fu; Xu, Zeng-yu; Ge, Chang-chun; N, Noda

2003-08-01

Tungsten-coated carbon and copper was prepared by vacuum plasma spraying (VPS) and inert gas plasma spraying (IPS), respectively. W/CFC (Tungsten/Carbon Fiber-Enhanced material) coating has a diffusion barrier that consists of W and Re multi-layers pre-deposited by physical vapor deposition on carbon fiber-enhanced materials, while W/Cu coating has a graded transition interface. Different grain growth processes of tungsten coatings under stable and transient heat loads were observed, their experimental results indicated that the recrystallizing temperature of VPS-W coating was about 1400 °C and a recrystallized columnar layer of about 30 μm thickness was formed by cyclic heat loads of 4 ms pulse duration. Erosion and modifications of W/CFC and W/Cu coatings under high heat load, such as microstructure changes of interface, surface plastic deformations and cracks, were investigated, and the erosion mechanism (erosion products) of these two kinds of tungsten coatings under high heat flux was also studied.

Periodic multilayer magnetized cold plasma containing a doped semiconductor

NASA Astrophysics Data System (ADS)

Nayak, Chittaranjan; Saha, Ardhendu; Aghajamali, Alireza

2018-07-01

The present work is to numerically investigate the properties of the defect mode in a one-dimensional photonic crystal made of magnetized cold plasma, doped by semiconductor. The defect mode of such kind of multilayer structure is analyzed by applying the character matrix method to each individual layer. Numerical results illustrate that the defect mode frequency can be tuned by varying the external magnetic field, the electron density, and the thickness of the defect layer. Moreover, the behavior of the defect mode was found to be quite interesting when study the oblique incidence. It was found that for both right- and left-hand polarized transversal magnetic waves, the defect mode of the proposed defective structure disappears when the angle of incidence is larger than a particular oblique incidence. For the left-hand polarized transversal electric wave, however, an additional defect mode was noticed. The results lead to some new information concerning the designing of new types of tunable narrowband microwave filters.

Periodic multilayer magnetized cold plasma containing a doped semiconductor

NASA Astrophysics Data System (ADS)

Nayak, Chittaranjan; Saha, Ardhendu; Aghajamali, Alireza

2018-02-01

The present work is to numerically investigate the properties of the defect mode in a one-dimensional photonic crystal made of magnetized cold plasma, doped by semiconductor. The defect mode of such kind of multilayer structure is analyzed by applying the character matrix method to each individual layer. Numerical results illustrate that the defect mode frequency can be tuned by varying the external magnetic field, the electron density, and the thickness of the defect layer. Moreover, the behavior of the defect mode was found to be quite interesting when study the oblique incidence. It was found that for both right- and left-hand polarized transversal magnetic waves, the defect mode of the proposed defective structure disappears when the angle of incidence is larger than a particular oblique incidence. For the left-hand polarized transversal electric wave, however, an additional defect mode was noticed. The results lead to some new information concerning the designing of new types of tunable narrowband microwave filters.

A new solution chemical method to make low dimensional thermoelectric materials

NASA Astrophysics Data System (ADS)

Ding, Zhongfen

2001-11-01

Bismuth telluride and its alloys are currently the best thermoelectric materials known at room temperature and are therefore used for portable solid-state refrigeration. If the thermal electric figure of merit ZT could be improved by a factor of about 3, quiet and rugged solid-state devices could eventually replace conventional compressor based cooling systems. In order to test a theory that improved one-dimensional or two-dimensional materials could enhance ZT due to lower thermal conductivity, we are developing solution processing methods to make low dimensional materials. Bismuth telluride and its p-type and n-type alloys have layered structures consisting of 5 atom thick Te-Bi-Te-Bi-Te sheets, each sheet about 10 A thick. Lithium ions are intercalated into the layered materials using liquid ammonia. The lithium-intercalated materials are then exfoliated in water to form colloidal suspensions with narrow particle size distributions and are stable for more than 24 hours. The layers are then deposited on substrates, which after annealing at low temperatures, form highly c-axis oriented thin films. The exfoliated layers can potentially be restacked with other ions or layered materials in between the sheets to form novel structures. The restacked layers when treated with nitric acid and sonication form high yield nanorod structured materials. This new intercalation and exfoliation followed by sonication method could potentially be used for many other layered materials to make nanorod structured materials. The low dimensional materials are characterized by powder X-ray diffraction, atomic force microscopy (AFM), transmission electron microscopy (TEM), scanning electron microscopy (SEM), inductively coupled plasma (ICP) and dynamic light scattering.

Basic analytical investigation of plasma-chemically modified carbon fibers1

NASA Astrophysics Data System (ADS)

Bubert, H.; Ai, X.; Haiber, S.; Heintze, M.; Brüser, V.; Pasch, E.; Brandl, W.; Marginean, G.

2002-10-01

The background of the present investigation is to enhance the overall adherence of vapor grown carbon fibers (VGCF) to the surrounding polymer matrix in different applications by forming polar groups at their surfaces and by modifying the surface morphology. This has been done by plasma treatments using a low-pressure plasma with different gases, flow rates, pressures and powers. Two different types of carbon fibers were investigated: carbon microfibers and carbon nanofibers. The characterization of fiber surfaces was achieved by photoelectron spectroscopy (XPS), contact angle measurements and titration. These investigations were accompanied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The oxygen plasma treatment of the fibers changes the surfaces by forming a layer with a thickness of the order of one nanometer mainly consisting of functional groups like hydroxyl, carbonyl and carboxyl. After functionalization of the complete surface, a further plasma treatment does not enhance the superficial oxygen content but changes slightly the portions of the functional groups. A comparison of the methods applied provides a largely consistent image of the effect of plasma treatment.

Cutin plays a role in differentiation of endosperm-derived callus of kiwifruit.

PubMed

Popielarska-Konieczna, Marzena; Kozieradzka-Kiszkurno, Małgorzata; Bohdanowicz, Jerzy

2011-11-01

Cutin fluorescence, after auramine O treatment, was detected on the surface of organogenic areas (protuberances) of endosperm derived callus induced on Murashige and Skoog medium with thidiazuron (0.5 mg l(-1)) in darkness. Electron micrographs of the protuberances revealed cuticle, visible as a dark-staining layer, and amorphous waxes on the cell wall. In some cases the cells of the epidermis-like layer and shoot buds at early stages of development showed thick and characteristically wavy cutin. This waviness corresponds with the wrinkled appearance of the cell wall as observed by scanning electron microscopy. The role of multivesicular bodies in cutin production and transfer to the plasma membrane is discussed.

X Ray Mask Of Gold-Carbon Mixture Absorber On BCN Compound Substrate Fabricated By Plasma Processes

NASA Astrophysics Data System (ADS)

Aiyer, Chandrasekhar R.; Itoh, Satoshi; Yamada, Hitomi; Morita, Shinzo; Hattori, Shuzo

1988-06-01

X-ray mask fabrication based on BCN compound membrane and gold containing polymeric carbon ( Au-C ) absorber by totally dry processes is proposed. The Au-C films were depo-sited by plasma polymerization of propylene or styrene monomers and co-evaporation of gold. These films have 2 to 5 times higher etching rate than that of pure gold for 09 RIE, depending on the Au content. The stress in the films could be reduced to 1.9 E 7 N/m2 by annealing. The BCN films were deposited on silicon wafers by rf (13.56 MHz) plasma CVD with diborane, methane and nitrogen as source gases at typical deposition rate of 30 nm/min. The optical (633nm) and X ray (Pd L~) transparencies were nearly 80% for film thickness of 6 um. Patterning of Au-C was achieved by using tungsten as intermediate layer and PMMA electron beam resist. CF4 RIE was used to etch the tungsten layer which in turn acted as mask for the gold carbide 02 RIE. The process parameters and the characteristics of the Au-C and BCN films are presented.

Alterations in Retinal Layer Thickness and Reflectance at Different Stages of Diabetic Retinopathy by En Face Optical Coherence Tomography

PubMed Central

Wanek, Justin; Blair, Norman P.; Chau, Felix Y.; Lim, Jennifer I.; Leiderman, Yannek I.; Shahidi, Mahnaz

2016-01-01

Purpose This article reports a method for en face optical coherence tomography (OCT) imaging and quantitative assessment of alterations in both thickness and reflectance of individual retinal layers at different stages of diabetic retinopathy (DR). Methods High-density OCT raster volume scans were acquired in 29 diabetic subjects divided into no DR (NDR) or non-proliferative DR (NPDR) groups and 22 control subjects (CNTL). A customized image segmentation method identified eight retinal layer interfaces and generated en face thickness maps and reflectance images for nerve fiber layer (NFL), ganglion cell and inner plexiform layers (GCLIPL), inner nuclear layer (INL), outer plexiform layer (OPL), outer nuclear layer (ONL), photoreceptor outer segment layer (OSL), and retinal pigment epithelium (RPE). Mean thickness and intensity values were calculated in nine macular subfields for each retinal layer. Results En face thickness maps and reflectance images of retinal layers in CNTL subjects corresponded to normal retinal anatomy. Total retinal thickness correlated negatively with age in nasal subfields (R ≤−0.31; P ≤ 0.03, N = 51). In NDR subjects, NFL and OPL thickness were decreased (P = 0.05), and ONL thickness was increased (P = 0.04) compared to CNTL. In NPDR subjects, GCLIPL thickness was increased in perifoveal subfields (P < 0.05) and INL intensity was higher in all macular subfields (P = 0.04) compared to CNTL. Conclusions Depth and spatially resolved retinal thickness and reflectance measurements are potential biomarkers for assessment and monitoring of DR. PMID:27409491

Effect of layer thickness on the elution of bulk-fill composite components.

PubMed

Rothmund, Lena; Reichl, Franz-Xaver; Hickel, Reinhard; Styllou, Panorea; Styllou, Marianthi; Kehe, Kai; Yang, Yang; Högg, Christof

2017-01-01

An increment layering technique in a thickness of 2mm or less has been the standard to sufficiently convert (co)monomers. Bulk fill resin composites were developed to accelerate the restoration process by enabling up to 4mm thick increments to be cured in a single step. The aim of the present study is to investigate the effect of layer thickness on the elution of components from bulk fill composites. The composites ELS Bulk fill, SDR Bulk fill and Venus Bulkfill were polymerized according to the instruction of the manufacturers. For each composite three groups with four samples each (n=4) were prepared: (1) samples with a layer thickness of 2mm; (2) samples with a layer thickness of 4mm and (3) samples with a layer thickness of 6mm. The samples were eluted in methanol and water for 24h and 7 d. The eluates were analyzed by gas chromatography/mass spectrometry (GC/MS). A total of 11 different elutable substances have been identified from the investigated composites. Following methacrylates showed an increase of elution at a higher layer thickness: TEGDMA (SDR Bulk fill, Venus Bulk fill), EGDMA (Venus Bulk fill). There was no significant difference in the elution of HEMA regarding the layer thickness. The highest concentration of TEGDMA was 146μg/mL for SDR Bulk fill at a layer thickness of 6mm after 7 d in water. The highest HEMA concentration measured at 108μg/mL was detected in the methanol eluate of Venus Bulk fill after 7 d with a layer thickness of 6mm. A layer thickness of 4mm or more can lead to an increased elution of some bulk fill components, compared to the elution at a layer thickness of 2mm. Copyright © 2016 The Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

Fully kinetic simulations of magnetic reconnction in semi-collisional plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Daughton, William S; Roytershteyn, Vadim S; Albright, Brian J

2009-01-01

The influence of Coulomb collisions on the dynamics of magnetic reconnection is examined using fully kinetic simulations with a Monte-Carlo treatment of the Fokker-Planck collision operator. This powerful first-principles approach offers a bridge between kinetic and fluid regimes, which may prove useful for understanding the applicability of various fluid models. In order to lay the necessary groundwork, the collision algorithm is first carefully bench marked for a homogeneous plasma against theoretical predictions for beam-plasma interactions and electrical resistivity. Next, the collisional decay of a current layer is examined as a function of guide field, allowing direct comparisons with transport theorymore » for the parallel and perpendicular resistivity as well as the thermoelectric force. Finally, the transition between collisional and collision less reconnection is examined in neutral sheet geometry. For modest Lundquist numbers S {approx}< 1000, a distinct transition is observed when the thickness of the Sweet-Parker layers falls below the ion inertia length {delta}{sub sp} {approx}< d,. At higher Lundquist number, deviations from the Sweet-Parker scaling are observed due to the growth of plasmoids (secondary-islands) within the elongated resistive layer. In certain cases, this instability leads to the onset of fast reconnection sooner than expected from {delta}{sub sp} {approx} d, condition. After the transition to fast reconnection, elongated electron current layers are formed which are unstable to the formation of new plasmoids. The structure and time-dependence of the electron diffusion region in these semi-collisional regimes is profoundly different than reported in two-fluid simulations.« less

New developments in surface technology and prototyping

NASA Astrophysics Data System (ADS)

Himmer, Thomas; Beyer, Eckhard

2003-03-01

Novel lightweight applications in the automotive and aircraft industries require advanced materials and techniques for surface protection as well as direct and rapid manufacturing of the related components and tools. The manufacturing processes presented in this paper are based on multiple additive and subtractive technologies such as laser cutting, laser welding, direct laser metal deposition, laser/plasma hybrid spraying technique or CNC milling. The process chain is similar to layer-based Rapid Prototyping Techniques. In the first step, the 3D CAD geometry is sliced into layers by a specially developed software. These slices are cut by high speed laser cutting and then joined together. In this way laminated tools or parts are built. To improve surface quality and to increase wear resistance a CNC machining center is used. The system consists of a CNC milling machine, in which a 3 kW Nd:YAG laser, a coaxial powder nozzle and a digitizing system are integrated. Using a new laser/plasma hybrid spraying technique, coatings can be deposited onto parts for surface protection. The layers show a low porosity and high adhesion strength, the thickness is up to 0.3 mm, and the lower effort for preliminary surface preparation reduces time and costs of the whole process.

Single-Run Single-Mask Inductively-Coupled-Plasma Reactive-Ion-Etching Process for Fabricating Suspended High-Aspect-Ratio Microstructures

NASA Astrophysics Data System (ADS)

Yang, Yao-Joe; Kuo, Wen-Cheng; Fan, Kuang-Chao

2006-01-01

In this work, we present a single-run single-mask (SRM) process for fabricating suspended high-aspect-ratio structures on standard silicon wafers using an inductively coupled plasma-reactive ion etching (ICP-RIE) etcher. This process eliminates extra fabrication steps which are required for structure release after trench etching. Released microstructures with 120 μm thickness are obtained by this process. The corresponding maximum aspect ratio of the trench is 28. The SRM process is an extended version of the standard process proposed by BOSCH GmbH (BOSCH process). The first step of the SRM process is a standard BOSCH process for trench etching, then a polymer layer is deposited on trench sidewalls as a protective layer for the subsequent structure-releasing step. The structure is released by dry isotropic etching after the polymer layer on the trench floor is removed. All the steps can be integrated into a single-run ICP process. Also, only one mask is required. Therefore, the process complexity and fabrication cost can be effectively reduced. Discussions on each SRM step and considerations for avoiding undesired etching of the silicon structures during the release process are also presented.

Interfacial Layer Effects in Ba(1-x)Sr(x)TiO3 Thick Films Prepared by Plasma Spray

DTIC Science & Technology

2003-04-01

in Materials Development for Direct Write technologies, edited by D. B. Chrisey, D. R. Gamota, H . Helvajian , and D. P. Taylor, (Mater. Res. Soc. Proc...Direct Write technologies, edited by D. B. Chrisey, D. R. Gamota, H . Helvajian , and D. P. Taylor, (Mater. Res. Soc. Proc. 624, San Francisco, CA, 2000...Research Center at Northwestern University supported by the MRSEC program under a NSF grant (DMR-0076097). REFERENCES 1. K. H . Church, C. Fore, T. Feeley

Characterisation of anti-erosive properties of nanocomposite coatings by the methods of sclerometry

NASA Astrophysics Data System (ADS)

Kudryakov, O. V.; Varavka, V. N.; Ilyasov, V. V.

2017-05-01

Results of research of coatings of the different metal-ceramics systems are given. Coatings were received by ion-plasma sedimentation in vacuum in the form of multilayered composite material, which had a thickness of layers within nanometric range. Selection of composite systems is determined by applied research problem - namely designing of the anti-erosive coatings durable in the condition of drop impingement impacts. For this purpose the sclerometric studies, the bench erosive tests and optimization of the obtained data were done.

Growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke

2016-04-11

The growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of themore » (InN){sub 1}/(GaN){sub 4} SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.« less

Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Hjort, Filip; Hashemi, Ehsan; Adolph, David; Ive, Tommy; Haglund, Àsa

2017-02-01

III-nitride-based vertical-cavity surface-emitting lasers have so far used intracavity contacting schemes since electrically conductive distributed Bragg reflectors (DBRs) have been difficult to achieve. A promising material combination for conductive DBRs is ZnO/GaN due to the small conduction band offset and ease of n-type doping. In addition, this combination offers a small lattice mismatch and high refractive index contrast, which could yield a mirror with a broad stopband and a high peak reflectivity using less than 20 DBR-pairs. A crack-free ZnO/GaN DBR was grown by hybrid plasma-assisted molecular beam epitaxy. The ZnO layers were approximately 20 nm thick and had an electron concentration of 1×1019 cm-3, while the GaN layers were 80-110 nm thick with an electron concentration of 1.8×1018 cm-3. In order to measure the resistance, mesa structures were formed by dry etching through the top 3 DBR-pairs and depositing non-annealed Al contacts on the GaN-layers at the top and next to the mesas. The measured specific series resistance was dominated by the lateral and contact contributions and gave an upper limit of 10-3Ωcm2 for the vertical resistance. Simulations show that the ZnO electron concentration and the cancellation of piezoelectric and spontaneous polarization in strained ZnO have a large impact on the vertical resistance and that it could be orders of magnitudes lower than what was measured. This is the first report on electrically conductive ZnO/GaN DBRs and the upper limit of the resistance reported here is close to the lowest values reported for III-nitride-based DBRs.

Characterizing Fluorocarbon Assisted Atomic Layer Etching of Si Using Cyclic Ar/C 4F 8 and Ar/CHF 3 Plasma

DOE PAGES

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; ...

2016-09-08

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO 2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C 4F 8 and CHF 3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32,more » 020603 (2014), and D. Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO 2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF 3 has a lower FC deposition yield for both SiO 2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F 8. The thickness of deposited FC layers using CHF 3 is found to be greater for Si than for SiO 2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.« less

Enhanced relativistic harmonics by electron nanobunching

NASA Astrophysics Data System (ADS)

an der Brügge, D.; Pukhov, A.

2010-03-01

It is shown that when a few-cycle, relativistically intense, p-polarized laser pulse is obliquely incident on overdense plasma, the surface electrons may form ultrathin, highly compressed layers with a width of a few nanometers. These electron "nanobunches" emit synchrotron radiation coherently. We calculate the one-dimensional synchrotron spectrum analytically and obtain a slowly decaying power law with an exponent of 4/3 or 6/5. This is much flatter than the 8/3 power of the Baeva-Gordienko-Pukhov spectrum, produced by a relativistically oscillating bulk skin layer. The synchrotron spectrum cutoff frequency is defined either by the electron relativistic γ-factor or by the thickness of the emitting layer. In the numerically demonstrated, locally optimal case, the radiation is emitted in the form of a single attosecond pulse, which contains almost the entire energy of the full optical cycle.

Contour forming of metals by laser peening

DOEpatents

Hackel, Lloyd; Harris, Fritz

2002-01-01

A method and apparatus are provided for forming shapes and contours in metal sections by generating laser induced compressive stress on the surface of the metal workpiece. The laser process can generate deep compressive stresses to shape even thick components without inducing unwanted tensile stress at the metal surface. The precision of the laser-induced stress enables exact prediction and subsequent contouring of parts. A light beam of 10 to 100 J/pulse is imaged to create an energy fluence of 60 to 200 J/cm.sup.2 on an absorptive layer applied over a metal surface. A tamping layer of water is flowed over the absorptive layer. The absorption of laser light causes a plasma to form and consequently creates a shock wave that induces a deep residual compressive stress into the metal. The metal responds to this residual stress by bending.

Effect of Discharge Time on Plasma Electrolytic Borocarbonitriding of Pure Iron

NASA Astrophysics Data System (ADS)

Jin, Xiaoyue; Wu, Jie; Wang, Bin; Yang, Xuan; Chen, Lin; Qu, Yao; Xue, Wenbin

The plasma electrolytic borocarbonitriding (PEB/C/N) process on pure iron was carried out in 25% borax solution with glycerine and carbamide additives under different discharge time at 360V. The morphology and structure of PEB/C/N hardened layers were analyzed by SEM and XRD. The hardness profiles of hardened layers were measured by microhardness test. Corrosion behavior of PEB/C/N layers was evaluated by potentiodynamic polarization and electrochemical impedance spectroscopy (EIS). Their wear performance was carried out using a pin-disc friction and wear tester under dry sliding test. The PEB/C/N samples mainly consisted of α-Fe, Fe2B, Fe3C, FeN, FeB, Fe2O3 and Fe4N phases, and the Fe2B phase was the dominant phase in the boride layer. It was found that the thickness of boride layer increased with the discharge time and reached 14μm after 60min treatment. The microhardness of the boride layer was up to 2100HV, which was much higher than that of the bare pure iron (about 150HV). After PEB/C/N treatment, the corrosion resistance of pure iron was slightly improved. The friction coefficient of PEB/C/N treated pure iron decreased to 0.129 from 0.556 of pure iron substrate. The wear rate of the PEB/C/N layer after 60min under dry sliding against ZrO2 ball was only 1/10 of that of the bare pure iron. The PEB/C/N treatment is an effective way to improve the wear behavior of pure iron.

Changes in Macular Retinal Layers and Peripapillary Nerve Fiber Layer Thickness after 577-nm Pattern Scanning Laser in Patients with Diabetic Retinopathy

PubMed Central

Shin, Ji Soo

2017-01-01

Purpose The aim of this study was to evaluate the changes in thickness of each macular retinal layer, the peripapillary retinal nerve fiber layer (RNFL), and central macular thickness (CMT) after 577-nm pattern scanning laser (PASCAL) photocoagulation in patients with diabetic retinopathy. Methods This retrospective study included 33 eyes with diabetic retinopathy that underwent 577-nm PASCAL photocoagulation. Each retinal layer thickness, peripapillary RNFL thickness, and CMT were measured by spectral-domain optical coherence tomography before 577-nm PASCAL photocoagulation, as well as at 1, 6, and 12 months after 577-nm PASCAL photocoagulation. Computerized intraretinal segmentation of optical coherence tomography was performed to identify the thickness of each retinal layer. Results The average thickness of the RNFL, ganglion cell layer, inner plexiform layer, inner nuclear layer, inner retinal layer, and CMT at each follow-up increased significantly from baseline (p < 0.001), whereas that of the retinal pigment epithelium at each follow-up decreased significantly from baseline (p < 0.001). The average thickness of the peripapillary RNFL increased significantly at one month (p < 0.001). This thickness subsequently recovered to 7.48 µm, and there were no significant changes at six or 12 months compared to baseline (p > 0.05). Conclusions Each macular retinal layer and CMT had a tendency to increase for one year after 577-nm PASCAL photocoagulation, whereas the average thickness of retinal pigment epithelium decreased at one-year follow-up compared to the baseline. Although an increase in peripapillary RNFL thickness was observed one month after 577-nm PASCAL photocoagulation, there were no significant changes at the one-year follow-up compared to the baseline. PMID:29022292

Changes in Macular Retinal Layers and Peripapillary Nerve Fiber Layer Thickness after 577-nm Pattern Scanning Laser in Patients with Diabetic Retinopathy.

PubMed

Shin, Ji Soo; Lee, Young Hoon

2017-12-01

The aim of this study was to evaluate the changes in thickness of each macular retinal layer, the peripapillary retinal nerve fiber layer (RNFL), and central macular thickness (CMT) after 577-nm pattern scanning laser (PASCAL) photocoagulation in patients with diabetic retinopathy. This retrospective study included 33 eyes with diabetic retinopathy that underwent 577-nm PASCAL photocoagulation. Each retinal layer thickness, peripapillary RNFL thickness, and CMT were measured by spectral-domain optical coherence tomography before 577-nm PASCAL photocoagulation, as well as at 1, 6, and 12 months after 577-nm PASCAL photocoagulation. Computerized intraretinal segmentation of optical coherence tomography was performed to identify the thickness of each retinal layer. The average thickness of the RNFL, ganglion cell layer, inner plexiform layer, inner nuclear layer, inner retinal layer, and CMT at each follow-up increased significantly from baseline (p < 0.001), whereas that of the retinal pigment epithelium at each follow-up decreased significantly from baseline (p < 0.001). The average thickness of the peripapillary RNFL increased significantly at one month (p < 0.001). This thickness subsequently recovered to 7.48 μm, and there were no significant changes at six or 12 months compared to baseline (p > 0.05). Each macular retinal layer and CMT had a tendency to increase for one year after 577-nm PASCAL photocoagulation, whereas the average thickness of retinal pigment epithelium decreased at one-year follow-up compared to the baseline. Although an increase in peripapillary RNFL thickness was observed one month after 577-nm PASCAL photocoagulation, there were no significant changes at the one-year follow-up compared to the baseline. © 2017 The Korean Ophthalmological Society

Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al{sub 2}O{sub 3} films deposited by remote plasma atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Hyunsoo; Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741; Choi, Hagyoung

2013-11-07

In the present study, we investigated the gas and moisture permeation barrier properties of Al{sub 2}O{sub 3} films deposited on polyethersulfone films (PES) by capacitively coupled plasma (CCP) type Remote Plasma Atomic Layer Deposition (RPALD) at Radio Frequency (RF) plasma powers ranging from 100 W to 400 W in 100 W increments using Trimethylaluminum [TMA, Al(CH{sub 3}){sub 3}] as the Al source and O{sub 2} plasma as the reactant. To study the gas and moisture permeation barrier properties of 100-nm-thick Al{sub 2}O{sub 3} at various plasma powers, the Water Vapor Transmission Rate (WVTR) was measured using an electrical Ca degradationmore » test. WVTR decreased as plasma power increased with WVTR values for 400 W and 100 W of 2.6 × 10{sup −4} gm{sup −2}day{sup −1} and 1.2 × 10{sup −3} gm{sup −2}day{sup −1}, respectively. The trends for life time, Al-O and O-H bond, density, and stoichiometry were similar to that of WVTR with improvement associated with increasing plasma power. Further, among plasma power ranging from 100 W to 400 W, the highest power of 400 W resulted in the best moisture permeation barrier properties. This result was attributed to differences in volume and amount of ion and radical fluxes, to join the ALD process, generated by O{sub 2} plasma as the plasma power changed during ALD process, which was determined using a plasma diagnosis technique called the Floating Harmonic Method (FHM). Plasma diagnosis by FHM revealed an increase in ion flux with increasing plasma power. With respect to the ALD process, our results indicated that higher plasma power generated increased ion and radical flux compared with lower plasma power. Thus, a higher plasma power provides the best gas and moisture permeation barrier properties.« less

Fluorocarbon assisted atomic layer etching of SiO 2 and Si using cyclic Ar/C 4F 8 and Ar/CHF 3 plasma

DOE PAGES

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; ...

2015-11-11

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C 4F 8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C 4F 8 injection and synchronized plasma-based low energy Ar + ion bombardment has been established for SiO 2. 1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF 3 as a precursor is examined and compared to C 4F 8. CHF 3 is shown to enablemore » selective SiO 2/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

NASA Astrophysics Data System (ADS)

Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Hwang, Eun-Sook; Imai, Daichi; Itoi, Takaomi

2016-12-01

The growth kinetics and properties of nominally 1-ML (monolayer)-thick InN wells on/in +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the effects of growth temperature. Attention was also given to how and where the ˜1-ML-thick InN layers were frozen or embedded on/in the +c-GaN matrix. The D-ALEp of InN on GaN was a two-stage process; in the 1st stage, an "In+N" bilayer/monolayer was formed on the GaN surface, while in the 2nd, this was capped by a GaN barrier layer. Each process was monitored in-situ using spectroscopic ellipsometry. The target growth temperature was above 620 °C and much higher than the upper critical epitaxy temperature of InN (˜500 °C). The "In+N" bilayer/monolayer tended to be an incommensurate phase, and the growth of InN layers was possible only when they were capped with a GaN layer. The InN layers could be coherently inserted into the GaN matrix under self-organizing and self-limiting epitaxy modes. The growth temperature was the most dominant growth parameter on both the growth process and the structure of the InN layers. Reflecting the inherent growth behavior of D-ALEp grown InN on/in +c-GaN at high growth temperature, the embedded InN layers in the GaN matrix were basically not full-ML in coverage, and the thickness of sheet-island-like InN layers was essentially either 1-ML or 2-ML. It was found that these InN layers tended to be frozen at the step edges on the GaN and around screw-type threading dislocations. The InN wells formed type-I band line-up heterostructures with GaN barriers, with exciton localization energies of about 300 and 500 meV at 15 K for the 1-ML and 2-ML InN wells, respectively.

Damage evaluation in graphene underlying atomic layer deposition dielectrics

PubMed Central

Tang, Xiaohui; Reckinger, Nicolas; Poncelet, Olivier; Louette, Pierre; Ureña, Ferran; Idrissi, Hosni; Turner, Stuart; Cabosart, Damien; Colomer, Jean-François; Raskin, Jean-Pierre; Hackens, Benoit; Francis, Laurent A.

2015-01-01

Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors. PMID:26311131

Single-Camera Stereoscopy Setup to Visualize 3D Dusty Plasma Flows

NASA Astrophysics Data System (ADS)

Romero-Talamas, C. A.; Lemma, T.; Bates, E. M.; Birmingham, W. J.; Rivera, W. F.

2016-10-01

A setup to visualize and track individual particles in multi-layered dusty plasma flows is presented. The setup consists of a single camera with variable frame rate, and a pair of adjustable mirrors that project the same field of view from two different angles to the camera, allowing for three-dimensional tracking of particles. Flows are generated by inclining the plane in which the dust is levitated using a specially designed setup that allows for external motion control without compromising vacuum. Dust illumination is achieved with an optics arrangement that includes a Powell lens that creates a laser fan with adjustable thickness and with approximately constant intensity everywhere. Both the illumination and the stereoscopy setup allow for the camera to be placed at right angles with respect to the levitation plane, in preparation for magnetized dusty plasma experiments in which there will be no direct optical access to the levitation plane. Image data and analysis of unmagnetized dusty plasma flows acquired with this setup are presented.

The influence of surface microstructure and chemical composition on corrosion behaviour in fuel-grade bio-ethanol of low-alloy steel modified by plasma nitro-carburizing and post-oxidizing

NASA Astrophysics Data System (ADS)

Boniatti, Rosiana; Bandeira, Aline L.; Crespi, Ângela E.; Aguzzoli, Cesar; Baumvol, Israel J. R.; Figueroa, Carlos A.

2013-09-01

The interaction of bio-ethanol on steel surfaces modified by plasma-assisted diffusion technologies is studied for the first time. The influence of surface microstructure and chemical composition on corrosion behaviour of AISI 4140 low-alloy steel in fuel-grade bio-ethanol was investigated. The steel surfaces were modified by plasma nitro-carburizing followed plasma oxidizing. X-ray diffraction, scanning electron microscopy, optical microscopy, X-ray dispersive spectroscopy, and glow-discharge optical emission spectroscopy were used to characterize the modified surface before and after immersion tests in bio-ethanol up to 77 days. The main corrosion mechanism is pit formation. The pit density and pit size were measured in order to quantify the corrosion resistance which was found to depend more strongly on microstructure and morphology of the oxide layer than on its thickness. The best corrosion protection was observed for samples post-oxidized at 480 °C and 90 min.

Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface

NASA Astrophysics Data System (ADS)

Hauenstein, R. J.; Collins, D. A.; Cai, X. P.; O'Steen, M. L.; McGill, T. C.

1995-05-01

Effect of a nitrogen electron-cyclotron-resonance (ECR) microwave plasma on near-surface composition, crystal structure, and morphology of the As-stabilized GaAs (100) surface is investigated with the use of digitally image-processed in situ reflection high energy electron diffraction. Nitridation is performed on molecular beam epitaxially (MBE) grown GaAs surfaces near 600 °C under typical conditions for ECR microwave plasma-assisted MBE growth of GaN films on GaAs. Brief plasma exposures (≊3-5 s) are shown to result in a specular, coherently strained, relatively stable, GaN film approximately one monolayer in thickness, which can be commensurately overgrown with GaAs while longer exposures (up to 1 min) result in incommensurate zincblende epitaxial GaN island structures. Specular and nonspecular film formations are explained in terms of N-for-As surface and subsurface anion exchange reactions, respectively. Commensurate growth of ultrathin buried GaN layers in GaAs is achieved.

Cloud layer thicknesses from a combination of surface and upper-air observations

NASA Technical Reports Server (NTRS)

Poore, Kirk D.; Wang, Junhong; Rossow, William B.

1995-01-01

Cloud layer thicknesses are derived from base and top altitudes by combining 14 years (1975-1988) of surface and upper-air observations at 63 sites in the Northern Hemisphere. Rawinsonde observations are employed to determine the locations of cloud-layer top and base by testing for dewpoint temperature depressions below some threshold value. Surface observations serve as quality checks on the rawinsonde-determined cloud properties and provide cloud amount and cloud-type information. The dataset provides layer-cloud amount, cloud type, high, middle, or low height classes, cloud-top heights, base heights and layer thicknesses, covering a range of latitudes from 0 deg to 80 deg N. All data comes from land sites: 34 are located in continental interiors, 14 are near coasts, and 15 are on islands. The uncertainties in the derived cloud properties are discussed. For clouds classified by low-, mid-, and high-top altitudes, there are strong latitudinal and seasonal variations in the layer thickness only for high clouds. High-cloud layer thickness increases with latitude and exhibits different seasonal variations in different latitude zones: in summer, high-cloud layer thickness is a maximum in the Tropics but a minimum at high latitudes. For clouds classified into three types by base altitude or into six standard morphological types, latitudinal and seasonal variations in layer thickness are very small. The thickness of the clear surface layer decreases with latitude and reaches a summer minimum in the Tropics and summer maximum at higher latitudes over land, but does not vary much over the ocean. Tropical clouds occur in three base-altitude groups and the layer thickness of each group increases linearly with top altitude. Extratropical clouds exhibit two groups, one with layer thickness proportional to their cloud-top altitude and one with small (less than or equal to 1000 m) layer thickness independent of cloud-top altitude.

Endothelial glycocalyx: permeability barrier and mechanosensor.

PubMed

Curry, F E; Adamson, R H

2012-04-01

Endothelial cells are covered with a polysaccharide rich layer more than 400 nm thick, mechanical properties of which limit access of circulating plasma components to endothelial cell membranes. The barrier properties of this endothelial surface layer are deduced from the rate of tracer penetration into the layer and the mechanics of red and white cell movement through capillary microvessels. This review compares the mechanosensor and permeability properties of an inner layer (100-150 nm, close to the endothelial membrane) characterized as a quasi-periodic structure which accounts for key aspects of transvascular exchange and vascular permeability with those of the whole endothelial surface layers. We conclude that many of the barrier properties of the whole surface layer are not representative of the primary fiber matrix forming the molecular filter determining transvascular exchange. The differences between the properties of the whole layer and the inner glycocalyx structures likely reflect dynamic aspects of the endothelial surface layer including tracer binding to specific components, synthesis and degradation of key components, activation of signaling pathways in the endothelial cells when components of the surface layer are lost or degraded, and the spatial distribution of adhesion proteins in microdomains of the endothelial cell membrane.

An experimental study of icing control using DBD plasma actuator

NASA Astrophysics Data System (ADS)

Cai, Jinsheng; Tian, Yongqiang; Meng, Xuanshi; Han, Xuzhao; Zhang, Duo; Hu, Haiyang

2017-08-01

Ice accretion on aircraft or wind turbine has been widely recognized as a big safety threat in the past decades. This study aims to develop a new approach for icing control using an AC-DBD plasma actuator. The experiments of icing control (i.e., anti-/de-icing) on a cylinder model were conducted in an icing wind tunnel with controlled wind speed (i.e., 15 m/s) and temperature (i.e., -10°C). A digital camera was used to record the dynamic processes of plasma anti-icing and de-icing whilst an infrared imaging system was utilized to map the surface temperature variations during the anti-/de-icing processes. It was found that the AC-DBD plasma actuator is very effective in both anti-icing and de-icing operations. While no ice formation was observed when the plasma actuator served as an anti-icing device, a complete removal of the ice layer with a thickness of 5 mm was achieved by activating the plasma actuator for ˜150 s. Such information demonstrated the feasibility of plasma anti-/de-icing, which could potentially provide more effective and safer icing mitigation strategies.

A flexible plasma-treated silver-nanowire electrode for organic light-emitting devices.

PubMed

Li, Jun; Tao, Ye; Chen, Shufen; Li, Huiying; Chen, Ping; Wei, Meng-Zhu; Wang, Hu; Li, Kun; Mazzeo, Marco; Duan, Yu

2017-11-28

Silver nanowires (AgNWs) are a promising candidate to replace indium tin oxide (ITO) as transparent electrode material. However, the loose contact at the junction of the AgNWs and residual surfactant polyvinylpyrrolidone (PVP) increase the sheet resistance of the AgNWs. In this paper, an argon (Ar) plasma treatment method is applied to pristine AgNWs to remove the PVP layer and enhance the contact between AgNWs. By adjusting the processing time, we obtained AgNWs with a sheet resistance of 7.2Ω/□ and a transmittance of 78% at 550 nm. To reduce the surface roughness of the AgNWs, a peel-off process was used to transfer the AgNWs to a flexible NOA63 substrate. Then, an OLED was fabricated with the plasma-treated AgNWs electrode as anode. The highest brightness (27000 cd/m 2 ) and current efficiency (11.8 cd/A) was achieved with a 30 nm thick light emitting layer of tris-(8-hydroxyquinoline) aluminum doped with 1% 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5 H,11H-(1)-benzopyropyrano(6,7-8-I,j)quinolizin-11-one. Compared to thermal annealing, the plasma-treated AgNW film has a lower sheet resistance, a shorter processing time, and a better hole-injection. Our results indicate that plasma treatment is an effective and efficient method to enhance the conductivity of AgNW films, and the plasma-treated AgNW electrode is suitable to manufacture flexible organic optoelectronic devices.

Enhanced adherence of mouse fibroblast and vascular cells to plasma modified polyethylene.

PubMed

Reznickova, Alena; Novotna, Zdenka; Kolska, Zdenka; Kasalkova, Nikola Slepickova; Rimpelova, Silvie; Svorcik, Vaclav

2015-01-01

Since the last decade, tissue engineering has shown a sensational promise in providing more viable alternatives to surgical procedures for harvested tissues, implants and prostheses. Biomedical polymers, such as low-density polyethylene (LDPE), high-density polyethylene (HDPE) and ultra-high molecular weight polyethylene (UHMWPE), were activated by Ar plasma discharge. Degradation of polymer chains was examined by determination of the thickness of ablated layer. The amount of an ablated polymer layer was measured by gravimetry. Contact angle, measured by goniometry, was studied as a function of plasma exposure and post-exposure aging times. Chemical structure of modified polymers was characterized by angle resolved X-ray photoelectron spectroscopy. Surface chemistry and polarity of the samples were investigated by electrokinetic analysis. Changes in surface morphology were followed using atomic force microscopy. Cytocompatibility of plasma activated polyethylene foils was studied using two distinct model cell lines; VSMCs (vascular smooth muscle cells) as a model for vascular graft testing and connective tissue cells L929 (mouse fibroblasts) approved for standardized material cytotoxicity testing. Specifically, the cell number, morphology, and metabolic activity of the adhered and proliferated cells on the polyethylene matrices were studied in vitro. It was found that the plasma treatment caused ablation of the polymers, resulting in dramatic changes in their surface morphology and roughness. ARXPS and electrokinetic measurements revealed oxidation of the polymer surface. It was found that plasma activation has a positive effect on the adhesion and proliferation of VSMCs and L929 cells. Copyright © 2015 Elsevier B.V. All rights reserved.

Investigation of merging/reconnection heating during solenoid-free startup of plasmas in the MAST Spherical Tokamak

NASA Astrophysics Data System (ADS)

Tanabe, H.; Yamada, T.; Watanabe, T.; Gi, K.; Inomoto, M.; Imazawa, R.; Gryaznevich, M.; Scannell, R.; Conway, N. J.; Michael, C.; Crowley, B.; Fitzgerald, I.; Meakins, A.; Hawkes, N.; McClements, K. G.; Harrison, J.; O'Gorman, T.; Cheng, C. Z.; Ono, Y.; The MAST Team

2017-05-01

We present results of recent studies of merging/reconnection heating during central solenoid (CS)-free plasma startup in the Mega Amp Spherical Tokamak (MAST). During this process, ions are heated globally in the downstream region of an outflow jet, and electrons locally around the X-point produced by the magnetic field of two internal P3 coils and of two plasma rings formed around these coils, the final temperature being proportional to the reconnecting field energy. There is an effective confinement of the downstream thermal energy, due to a thick layer of reconnected flux. The characteristic structure is sustained for longer than an ion-electron energy relaxation time, and the energy exchange between ions and electrons contributes to the bulk electron heating in the downstream region. The peak electron temperature around the X-point increases with toroidal field, but the downstream electron and ion temperatures do not change.

Utilization of plasmas for graphene synthesis

NASA Astrophysics Data System (ADS)

Shashurin, Alexey; Keidar, Michael

2013-10-01

Graphene is a one-atom-thick planar sheet of carbon atoms that are densely packed in a honeycomb crystal lattice. Grapheen has tremendous range of potential applications ranging from high-speed transistors to electrochemical energy storage devices and biochemical sensors. Methods of graphene synthesis include mechanical exfoliation, epitaxial growth on SiC, CVD and colloidal suspensions. In this work the utilization of plasmas in synthesis process is considered. Types of carbonaceous structures produced by the anodic arc and regions of their synthesis were studied. Ultimate role of substrate temperature and transformations occurring with various carbonaceous structures generated in plasma discharge were considered. Formation of graphene film on copper substrate was detected at temperatures around the copper melting point. The film was consisted of several layers graphene flakes having typical sizes of about 200 nm. Time required for crystallization of graphene on externally heated substrates was determined. This work was supported by National Science Foundation (NSF Grant No. CBET-1249213).

Adhesion promoters for large scale fabrication of dielectric elastomer stack transducers (DESTs) made of pre-fabricated dielectric films

NASA Astrophysics Data System (ADS)

Grotepaß, T.; Förster-Zügel, F.; Mößinger, H.; Schlaak, H. F.

2015-04-01

Multilayer dielectric elastomer stack transducers (DESTs) are a promising new transducer technology with many applications in different industry sectors, like medical devices, human-machine-interaction, etc. Stacked dielectric elastomer transducers show larger thickness contraction driven by lower voltages than transducers made from a single dielectric layer. Traditionally multilayered DESTs are produced by repeatedly cross-linking a liquid elastomeric pre-polymer into the required shape. Our recent research focusses on a novel fabrication method for large scale stack transducers with a surface area over 200 x 300 mm by processing pre-fabricated elastomeric thin films of less than 50 μm thicknesses. The thin films are provided as two- or three-layer composites, where the elastomer is sandwiched between one or two sacrificial liners. Separating the elastomeric film from the residual layers and assembling them into dielectric elastomer stack transducers poses many challenges concerning adhesion, since the dielectric film merely separates from the liner if the adhesive forces between them are overcome. Conversely, during the assembly of a dielectric elastomer stack transducer, adhesive forces have to be established between two elastomeric layers or between the dielectric and the electrode layer. The very low Young's modulus of at least one adhesion partner requires suitable means of increasing the adhesive forces between the different adhesive layers of a dielectric elastomer stack transducer to prevent a delamination of the transducer during its lifetime. This work evaluates different surface activation treatments - corona, low-pressure plasma and UV-light - and their applicability in the production of large scale DESTs made from pre-fabricated elastomeric films.

Thermal barrier coating life-prediction model development

NASA Technical Reports Server (NTRS)

Strangman, T. E.; Neumann, J.; Liu, A.

1986-01-01

The program focuses on predicting the lives of two types of strain-tolerant and oxidation-resistant thermal barrier coating (TBC) systems that are produced by commercial coating suppliers to the gas turbine industry. The plasma-sprayed TBC system, composed of a low-pressure plasma-spray (LPPS) or an argon shrouded plasma-spray (ASPS) applied oxidation resistant NiCrAlY or (CoNiCrAlY) bond coating and an air-plasma-sprayed yttria partially stabilized zirconia insulative layer, is applied by both Chromalloy, Klock, and Union Carbide. The second type of TBS is applied by the electron beam-physical vapor deposition (EB-PVD) process by Temescal. The second year of the program was focused on specimen procurement, TMC system characterization, nondestructive evaluation methods, life prediction model development, and TFE731 engine testing of thermal barrier coated blades. Materials testing is approaching completion. Thermomechanical characterization of the TBC systems, with toughness, and spalling strain tests, was completed. Thermochemical testing is approximately two-thirds complete. Preliminary materials life models for the bond coating oxidation and zirconia sintering failure modes were developed. Integration of these life models with airfoil component analysis methods is in progress. Testing of high pressure turbine blades coated with the program TBS systems is in progress in a TFE731 turbofan engine. Eddy current technology feasibility was established with respect to nondestructively measuring zirconia layer thickness of a TBC system.

Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, R.; Iwasaki, T.; Taoka, N.

2011-03-14

An electron cyclotron resonance (ECR) plasma postoxidation method has been employed for forming Al{sub 2}O{sub 3}/GeO{sub x}/Ge metal-oxide-semiconductor (MOS) structures. X-ray photoelectron spectroscopy and transmission electron microscope characterizations have revealed that a GeO{sub x} layer is formed beneath the Al{sub 2}O{sub 3} capping layer by exposing the Al{sub 2}O{sub 3}/Ge structures to ECR oxygen plasma. The interface trap density (D{sub it}) of Au/Al{sub 2}O{sub 3}/GeO{sub x}/Ge MOS capacitors is found to be significantly suppressed down to lower than 10{sup 11} cm{sup -2} eV{sup -1}. Especially, a plasma postoxidation time of as short as 10 s is sufficient to reduce D{submore » it} with maintaining the equivalent oxide thickness (EOT). As a result, the minimum D{sub it} values and EOT of 5x10{sup 10} cm{sup -2} eV{sup -1} and 1.67 nm, and 6x10{sup 10} cm{sup -2} eV{sup -1} and 1.83 nm have been realized for Al{sub 2}O{sub 3}/GeO{sub x}/Ge MOS structures with p- and n-type substrates, respectively.« less

Kinetic Plasma and Turbulent Mix Studies using DT Plastic-shell Implosions with Shell-thickness and Pressure Variations

NASA Astrophysics Data System (ADS)

Kim, Y.; Herrmann, H. W.; Hoffman, N. M.; Schmitt, M. J.; Bradley, P. A.; Kagan, G.; Gales, S.; Horsfield, C. J.; Rubery, M.; Leatherland, A.; Gatu Johnson, M.; Glebov, V.; Seka, W.; Marshall, F.; Stoeckl, C.; Church, J.

2014-10-01

Kinetic plasma and turbulent mix effects on inertial confinement fusion have been studied using a series of DT-filled plastic-shell implosions at the OMEGA laser facility. Plastic capsules of 4 different shell thicknesses (7.4, 15, 20, 29 micron) were shot at 2 different fill pressures in order to vary the ion mean free path compared to the size of fuel region (i.e., Knudsen number). We varied the empirical Knudsen number by a factor of 25. Measurements were obtained from the burn-averaged ion temperature and fuel areal density. Preliminary results indicate that as the empirical Knudsen number increases, fusion performances (e.g., neutron yield) increasingly deviate from hydrodynamic simulations unless turbulent mix and ion kinetic terms (e.g., enhanced ion diffusion, viscosity, thermal conduction, as well as Knudsen-layer fusion reactivity reduction) are considered. We are developing two separate simulations: one is a reduced-ion-kinetics model and the other is turbulent mix model. Two simulation results will be compared with the experimental observables.

Optical gradients in a-Si:H thin films detected using real-time spectroscopic ellipsometry with virtual interface analysis

NASA Astrophysics Data System (ADS)

Junda, Maxwell M.; Karki Gautam, Laxmi; Collins, Robert W.; Podraza, Nikolas J.

2018-04-01

Virtual interface analysis (VIA) is applied to real time spectroscopic ellipsometry measurements taken during the growth of hydrogenated amorphous silicon (a-Si:H) thin films using various hydrogen dilutions of precursor gases and on different substrates during plasma enhanced chemical vapor deposition. A procedure is developed for optimizing VIA model configurations by adjusting sampling depth into the film and the analyzed spectral range such that model fits with the lowest possible error function are achieved. The optimal VIA configurations are found to be different depending on hydrogen dilution, substrate composition, and instantaneous film thickness. A depth profile in the optical properties of the films is then extracted that results from a variation in an optical absorption broadening parameter in a parametric a-Si:H model as a function of film thickness during deposition. Previously identified relationships are used linking this broadening parameter to the overall shape of the optical properties. This parameter is observed to converge after about 2000-3000 Å of accumulated thickness in all layers, implying that similar order in the a-Si:H network can be reached after sufficient thicknesses. In the early stages of growth, however, significant variations in broadening resulting from substrate- and processing-induced order are detected and tracked as a function of bulk layer thickness yielding an optical property depth profile in the final film. The best results are achieved with the simplest film-on-substrate structures while limitations are identified in cases where films have been deposited on more complex substrate structures.

Giant magnetoresistance (GMR) behavior of electrodeposited NiFe/Cu multilayers: Dependence of non-magnetic and magnetic layer thicknesses

NASA Astrophysics Data System (ADS)

Kuru, Hilal; Kockar, Hakan; Alper, Mursel

2017-12-01

Giant magnetoresistance (GMR) behavior in electrodeposited NiFe/Cu multilayers was investigated as a function of non-magnetic (Cu) and ferromagnetic (NiFe) layer thicknesses, respectively. Prior to the GMR analysis, structural and magnetic analyses of the multilayers were also studied. The elemental analysis of the multilayers indicated that the Cu and Ni content in the multilayers increase with increasing Cu and NiFe layer thickness, respectively. The structural studies by X-ray diffraction revealed that all multilayers have face centred cubic structure with preferred (1 1 0) crystal orientation as their substrates. The magnetic properties studied with the vibrating sample magnetometer showed that the magnetizations of the samples are significantly affected by the layer thicknesses. Saturation magnetisation, Ms increases from 45 to 225 emu/cm3 with increasing NiFe layer thickness. The increase in the Ni content of the multilayers with a small Fe content causes an increase in the Ms. And, the coercivities ranging from 2 to 24 Oe are between the soft and hard magnetic properties. Also, the magnetic easy axis of the multilayers was found to be in the film plane. Magnetoresistance measurements showed that all multilayers exhibited the GMR behavior. The GMR magnitude increases with increasing Cu layer thickness and reaches its maximum value of 10% at the Cu layer thickness of 1 nm, then it decreases. And similarly, the GMR magnitude increases and reaches highest value of pure GMR (10%) for the NiFe layer thickness of 3 nm, and beyond this point GMR decreases with increasing NiFe layer thickness. Some small component of the anisotropic magnetoresistance was also observed at thin Cu and thick NiFe layer thicknesses. It is seen that the highest GMR values up to 10% were obtained in electrodeposited NiFe/Cu multilayers up to now. The structural, magnetic and magnetoresistance properties of the NiFe/Cu were reported via the variations of the thicknesses of Cu and NiFe layers with stressing the role of layer thicknesses on the high GMR behavior.

Zone compensated multilayer laue lens and apparatus and method of fabricating the same

DOEpatents

Conley, Raymond P.; Liu, Chian Qian; Macrander, Albert T.; Yan, Hanfei; Maser, Jorg; Kang, Hyon Chol; Stephenson, Gregory Brian

2015-07-14

A multilayer Laue Lens includes a compensation layer formed in between a first multilayer section and a second multilayer section. Each of the first and second multilayer sections includes a plurality of alternating layers made of a pair of different materials. Also, the thickness of layers of the first multilayer section is monotonically increased so that a layer adjacent the substrate has a minimum thickness, and the thickness of layers of the second multilayer section is monotonically decreased so that a layer adjacent the compensation layer has a maximum thickness. In particular, the compensation layer of the multilayer Laue lens has an in-plane thickness gradient laterally offset by 90.degree. as compared to other layers in the first and second multilayer sections, thereby eliminating the strict requirement of the placement error.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uribe, Fernando; Vianco, Paul Thomas; Zender, Gary L.

A study was performed that examined the microstructure and mechanical properties of 63Sn-37Pb (wt.%, Sn-Pb) solder joints made to thick film layers on low-temperature co-fired (LTCC) substrates. The thick film layers were combinations of the Dupont{trademark} 4596 (Au-Pt-Pd) conductor and Dupont{trademark} 5742 (Au) conductor, the latter having been deposited between the 4596 layer and LTCC substrate. Single (1x) and triple (3x) thicknesses of the 4596 layer were evaluated. Three footprint sizes were evaluated of the 5742 thick film. The solder joints exhibited excellent solderability of both the copper (Cu) lead and thick film surface. In all test sample configurations, themore » 5742 thick film prevented side wall cracking of the vias. The pull strengths were in the range of 3.4-4.0 lbs, which were only slightly lower than historical values for alumina (Al{sub 2}O{sub 3}) substrates. General (qualitative) observations: (a) The pull strength was maximized when the total number of thick film layers was between two and three. Fewer that two layers did not develop as strong of a bond at the thick film/LTCC interface; more than three layers and of increased footprint area, developed higher residual stresses at the thick film/LTCC interface and in the underlying LTCC material that weakened the joint. (b) Minimizing the area of the weaker 4596/LTCC interface (e.g., larger 5742 area) improved pull strength. Specific observations: (a) In the presence of vias and the need for the 3x 4596 thick film, the preferred 4596:5742 ratio was 1.0:0.5. (b) For those LTCC components that require the 3x 4596 layer, but do not have vias, it is preferred to refrain from using the 5742 layer. (c) In the absence of vias, the highest strength was realized with a 1x thick 5742 layer, a 1x thick 4596 layer, and a footprint ratio of 1.0:1.0.« less

The effect of the plasma needle on the human keratinocytes related to the wound healing process

NASA Astrophysics Data System (ADS)

Korolov, Ihor; Fazekas, Barbara; Széll, Márta; Kemény, Lajos; Kutasi, Kinga

2016-01-01

In the present study we aim to verify the influence of a non-thermal atmospheric pressure plasma on the wound healing process. In this process the major contributors are the keratinocytes, which migrate to fill in the gap created by the wound. Therefore, we performed the direct treatment of HPV-immortalized human keratinocytes, protected by a layer of phosphate buffered saline (PBS) solution, with the glow discharge generated in flowing helium by a plasma needle. To mimick a wound, a 4 mm scratch was performed on the cell culture (scratch assay). We conducted two types of experiments: (i) cell proliferation and (ii) wound-healing model experiments. The plasma needle configuration, the plasma treatment conditions and the thickness of the protecting PBS layer were set based on viability experiments. The proliferation studies showed that short, 5-10 s, and low power treatments, such as 18 W and 20 W input power, could positively influence the cell proliferation when keratinocytes were protected by PBS. On the other hand, the plasma treatment of cell medium covered keratinocytes resulted in the decrease of proliferation. The wound-healing model (scratch assay) studies showed, that there was a maximum in the wound reduction as a function of the input power and treatment time, namely, at 18 W and 5 s. Furthermore, the wound reduction strongly depended on the treated cell—PBS interaction time. To mimic an infected wound, the scratch assay was covered with a 1× {{10}9} cfu ml-1 Propionibacterium acnes suspension. The plasma treatment of this infected assay resulted in closing of the scratch, while in the non-treated assay the wound did not close at all.

Spectral ellipsometry as a method for characterization of nanosized films with ferromagnetic layers

NASA Astrophysics Data System (ADS)

Hashim, H.; Singkh, S. P.; Panina, L. V.; Pudonin, F. A.; Sherstnev, I. A.; Podgornaya, S. V.; Shpetnyi, I. A.; Beklemisheva, A. V.

2017-11-01

Nanosized films with ferromagnetic layers are widely used in nanoelectronics, sensor systems and telecommunications. Their properties may strongly differ from those of bulk materials that is on account of interfaces, intermediate layers and diffusion. In the present work, spectral ellipsometry and magnetooptical methods are adapted for characterization of the optical parameters and magnetization processes in two- and three-layer Cr/NiFe, Al/NiFe and Cr(Al)/Ge/NiFe films onto a sitall substrate for various thicknesses of Cr and Al layers. At a layer thickness below 20 nm, the complex refractive coefficients depend pronouncedly on the thickness. In two-layer films, remagnetization changes weakly over a thickness of the top layer, but the coercive force in three-layer films increases by more than twice upon remagnetization, while increasing the top layer thickness from 4 to 20 nm.

Formation of high heat resistant coatings by using gas tunnel type plasma spraying.

PubMed

Kobayashi, A; Ando, Y; Kurokawa, K

2012-06-01

Zirconia sprayed coatings are widely used as thermal barrier coatings (TBC) for high temperature protection of metallic structures. However, their use in diesel engine combustion chamber components has the long run durability problems, such as the spallation at the interface between the coating and substrate due to the interface oxidation. Although zirconia coatings have been used in many applications, the interface spallation problem is still waiting to be solved under the critical conditions such as high temperature and high corrosion environment. The gas tunnel type plasma spraying developed by the author can make high quality ceramic coatings such as Al2O3 and ZrO2 coating compared to other plasma spraying method. A high hardness ceramic coating such as Al2O3 coating by the gas tunnel type plasma spraying, were investigated in the previous study. The Vickers hardness of the zirconia (ZrO2) coating increased with decreasing spraying distance, and a higher Vickers hardness of about Hv = 1200 could be obtained at a shorter spraying distance of L = 30 mm. ZrO2 coating formed has a high hardness layer at the surface side, which shows the graded functionality of hardness. In this study, ZrO2 composite coatings (TBCs) with Al2O3 were deposited on SS304 substrates by gas tunnel type plasma spraying. The performance such as the mechanical properties, thermal behavior and high temperature oxidation resistance of the functionally graded TBCs was investigated and discussed. The resultant coating samples with different spraying powders and thickness are compared in their corrosion resistance with coating thickness as variables. Corrosion potential was measured and analyzed corresponding to the microstructure of the coatings. High Heat Resistant Coatings, Gas Tunnel Type Plasma Spraying, Hardness,

Analysis of heat transfer and erosion effects on ITER divertor plasma facing components induced by slow high-power transients

DOE Office of Scientific and Technical Information (OSTI.GOV)

Federici, G.; Raffray, A.R.; Chiocchio, S.

1995-12-31

This paper presents the results of an analysis carried out to investigate the thermal response of ITER divertor plasma facing components (PFC`s) clad with Be, W, and CFC, to high-recycling, high-power thermal transients (i.e. 10--30 MW/m{sup 2}) which are anticipated to last up to a few seconds. The armour erosion and surface melting are estimated for the different plasma facing materials (PFM`s) together with the maximum heat flux to the coolant, and armour/heat-sink interface temperature. The analysis assumes that intense target evaporation will lead to high radiative power losses in the plasma in front of the target which self-protects themore » target. The cases analyzed clarify the influence of several key parameters such as the plasma heat flux to the target, the loss of the melt layer, the duration of the event, the thickness of the armour, and comparison is made with cases without vapor shielding. Finally, some implications for the performance and lifetime of divertor PFC`s clad with different PFM`s are discussed.« less

Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Yoon, Sung-Min; Kim, Jiwan; Oh, Min Suk

2017-11-01

To improve the field effect mobility and control the threshold voltage ( V th ) of oxide thin film transistors (TFTs), we fabricated the oxide TFTs with double-stacked channel layers which consist of thick Zn-Sn-O (ZTO) and very thin In-Zn-O (IZO) layers. We investigated the effects of the thickness of thin conductive layer and the conductivity of thick layer on oxide TFTs with doublestacked channel layer. When we changed the thickness of thin conductive IZO channel layer, the resistivity values were changed. This resistivity of thin channel layer affected on the saturation field effect mobility and the off current of TFTs. In case of the thick ZTO channel layer which was deposited by sputtering in Ar: O2 = 10: 1, the device showed better performances than that which was deposited in Ar: O2 = 1: 1. Our TFTs showed high mobility ( μ FE ) of 40.7 cm2/Vs and V th of 4.3 V. We assumed that high mobility and the controlled V th were caused by thin conductive IZO layer and thick stable ZTO layer. Therefore, this double-stacked channel structure can be very promising way to improve the electrical characteristics of various oxide thin film transistors.

Huge domain-wall speed variation with respect to ferromagnetic layer thickness in ferromagnetic Pt/Co/TiO2/Pt films

NASA Astrophysics Data System (ADS)

Kim, Dae-Yun; Park, Min-Ho; Park, Yong-Keun; Yu, Ji-Sung; Kim, Joo-Sung; Kim, Duck-Ho; Min, Byoung-Chul; Choe, Sug-Bong

2018-02-01

In this study, we investigate the influence of the ferromagnetic layer thickness on the magnetization process. A series of ultrathin Pt/Co/TiO2/Pt films exhibits domain-wall (DW) speed variation of over 100,000 times even under the same magnetic field, depending on the ferromagnetic layer thickness. From the creep-scaling analysis, such significant variation is found to be mainly attributable to the thickness-dependence of the creep-scaling constant in accordance with the creep-scaling theory of the linear proportionality between the creep-scaling constant and the ferromagnetic layer thickness. Therefore, a thinner film shows a faster DW speed. The DW roughness also exhibits sensitive dependence on the ferromagnetic layer thickness: a thinner film shows smoother DW. The present observation provided a guide for an optimal design rule of the ferromagnetic layer thickness for better performance of DW-based devices.

Making AlN(x) Tunnel Barriers Using a Low-Energy Nitrogen-Ion Beam

NASA Technical Reports Server (NTRS)

Kaul, Anupama; Kleinsasser, Alan; Bumble, Bruce; LeDuc, Henry; Lee, Karen

2005-01-01

A technique based on accelerating positive nitrogen ions onto an aluminum layer has been demonstrated to be effective in forming thin (<2 nm thick) layers of aluminum nitride (AlN(x)) for use as tunnel barriers in Nb/Al-AlN(x)/Nb superconductor/insulator/ superconductor (SIS) Josephson junctions. AlN(x) is the present material of choice for tunnel barriers because, to a degree greater than that of any other suitable material, it offers the required combination of low leakage current at high current density and greater thermal stability. While ultra-thin AlN films with good thickness and stoichiometry control are easily formed using techniques such as reactive molecular beam epitaxy and chemical vapor deposition, growth temperatures of 900 C are necessary for the dissociative adsorption of nitrogen from either nitrogen (N2) or ammonia (NH3). These growth temperatures are prohibitively high for the formation of tunnel barriers on Nb films because interfacial reactions at temperatures as low as 200 to 300 C degrade device properties. Heretofore, deposition by reactive sputtering and nitridation of thin Al layers with DC and RF nitrogen plasmas have been successfully used to form AlN barriers in SIS junctions. However, precise control over critical current density Jc has proven to be a challenge, as is attaining adequate process reproducibility from system to system. The present ion-beam technique is an alternative to the plasma or reactive sputtering techniques as it provides a highly controlled arrival of reactive species, independent of the electrical conditions of the substrate or vacuum chamber. Independent and accurate control of parameters such as ion energy, flux, species, and direction promises more precise control of film characteristics such as stoichiometry and thickness than is the case with typical plasma processes. In particular, the background pressure during ion-beam nitride growth is 2 or 3 orders of magnitude lower, minimizing the formation of compounds with contaminants, which is critical in devices the performance of which is dictated by interfacial characteristics. In addition, the flux of incoming species can be measured in situ using ion probes so that the dose can be controlled accurately. The apparatus used in the present ion-beam technique includes a vacuum chamber containing a commercial collimated- ion-beam source, a supply of nitrogen and argon, and an ion probe for measuring the ion dose. Either argon or nitrogen can be used as the feed gases for the ion source, depending on whether cleaning of the substrate or growth of the nitride, respectively, is desired. Once the Nb base electrode and Al proximity layer have been deposited, the N2 gas line to the ion beam is vented and purged, and the ion-source is turned on until a stable discharge is obtained. The substrate is moved over the ion-beam source to expose the Al surface layer to the ion beam (see figure) for a specified duration for the formation of the nitride tunnel barrier. Next, the Nb counter-electrode layer is deposited on the nitride surface layer. The Nb/Al- AlN(x)/Nb-trilayer-covered substrate is then patterned into individual devices by use of conventional integrated-circuit processing techniques.

An automated design process for short pulse laser driven opacity experiments

DOE PAGES

Martin, M. E.; London, R. A.; Goluoglu, S.; ...

2017-12-21

Stellar-relevant conditions can be reached by heating a buried layer target with a short pulse laser. Previous design studies of iron buried layer targets found that plasma conditions are dominantly controlled by the laser energy while the accuracy of the inferred opacity is limited by tamper emission and optical depth effects. In this paper, we developed a process to simultaneously optimize laser and target parameters to meet a variety of design goals. We explored two sets of design cases: a set focused on conditions relevant to the upper radiative zone of the sun (electron temperatures of 200 to 400 eVmore » and densities greater than 1/10 of solid density) and a set focused on reaching temperatures consistent with deep within the radiative zone of the sun (500 to 1000 eV) at a fixed density. We found optimized designs for iron targets and determined that the appropriate dopant, for inferring plasma conditions, depends on the goal temperature: magnesium for up to 300 eV, aluminum for 300 to 500 eV, and sulfur for 500 to 1000 eV. The optimal laser energy and buried layer thickness increase with goal temperature. The accuracy of the inferred opacity is limited to between 11% and 31%, depending on the design. Finally, overall, short pulse laser heated iron experiments reaching stellar-relevant conditions have been designed with consideration of minimizing tamper emission and optical depth effects while meeting plasma condition and x-ray emission goals.« less

An automated design process for short pulse laser driven opacity experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martin, M. E.; London, R. A.; Goluoglu, S.

Stellar-relevant conditions can be reached by heating a buried layer target with a short pulse laser. Previous design studies of iron buried layer targets found that plasma conditions are dominantly controlled by the laser energy while the accuracy of the inferred opacity is limited by tamper emission and optical depth effects. In this paper, we developed a process to simultaneously optimize laser and target parameters to meet a variety of design goals. We explored two sets of design cases: a set focused on conditions relevant to the upper radiative zone of the sun (electron temperatures of 200 to 400 eVmore » and densities greater than 1/10 of solid density) and a set focused on reaching temperatures consistent with deep within the radiative zone of the sun (500 to 1000 eV) at a fixed density. We found optimized designs for iron targets and determined that the appropriate dopant, for inferring plasma conditions, depends on the goal temperature: magnesium for up to 300 eV, aluminum for 300 to 500 eV, and sulfur for 500 to 1000 eV. The optimal laser energy and buried layer thickness increase with goal temperature. The accuracy of the inferred opacity is limited to between 11% and 31%, depending on the design. Finally, overall, short pulse laser heated iron experiments reaching stellar-relevant conditions have been designed with consideration of minimizing tamper emission and optical depth effects while meeting plasma condition and x-ray emission goals.« less

Surface histology, topography, and ultrastructure of the tegument of adult Orthocoelium parvipapillatum (Stiles & Goldberger, 1910).

PubMed

Anuracpreeda, Panat; Chawengkirttikul, Runglawan; Sobhon, Prasert

2016-07-01

Adult Orthocoelium parvipapillatum are common parasites that reside in the rumen and reticulum of ruminants, i.e., cattle, sheep, goats, and buffaloes. The fluke is conical-shaped and slightly concave ventrally and convex dorsally, and measures bout 2.4-3.9 mm in length and 1.0-2.3 mm in width across the mid-section. The tegument of the adult worm is examined using light microscopy (LM) and scanning (SEM) and transmission electron microscopy (TEM). Under LM, the tegument appears as a thick homogeneous layer containing folds alternated with grooves without spines. SEM revealed that the tegumental surface is highly corrugated with ridges and furrows and appears spineless. Two types of sensory papillae are observed, i.e., type 1 is bulbous in shape with nipple-like tips and type 2 has a similar shape with short cilia. In TEM, the tegument has a typical syncytial organization and is divided into four layers. The first layer of the tegument contains ridges and furrows covered by a trilaminate membrane coated externally with the glycocalyx. The second layer is a strait area of cytoplasm that includes numerous ovoid electron-lucent (TG1) and disc-shaped electron-dense (TG2) tegumental granules and lysosomes. The third layer is the widest middle area which contains several evenly distributed mitochondria, TG1 and TG2. The fourth layer rests on a thick basal lamina and contains numerous infoldings of the basal plasma membrane with closely associated mitochondria. Both granules are produced and transported to the tegument by one type of tegumental cells lying in rows below the muscular layers.

Influence of O-Co-O layer thickness on the thermal conductivity of Na{sub x}Co{sub 2}O{sub 4} studied by positron annihilation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, H. Q.; Zhao, B.; Zhang, T.

2015-07-21

Nominal stoichiometric Na{sub x}Co{sub 2}O{sub 4} (x = 1.0, 1.2, 1.4, 1.6, 1.8, and 2.0) polycrystals were synthesized by a solid-state reaction method. They were further pressed into pellets by the spark plasma sintering. The crystal structure and morphology of Na{sub x}Co{sub 2}O{sub 4} samples were characterized by X-ray diffraction and scanning electron microscopy measurements. Good crystallinity and layered structures were observed for all the samples. Positron annihilation measurements were performed for Na{sub x}Co{sub 2}O{sub 4} as a function of Na content. Two lifetime components are resolved. τ{sub 1} is attributed mainly to positron annihilation in the O-Co-O layers and shifts tomore » Na layers only in the H3 phase. The second lifetime τ{sub 2} is due to positron annihilation in vacancy clusters which may exist in the Na layers or grain boundary region. The size of vacancy clusters grow larger but their concentration decreases with increasing Na content in the range of 1.0 < x < 1.8. The thickness of O-Co-O layer also shows continuous increase with increasing Na content, which is reflected by the increase of τ{sub 1}. The thermal conductivity κ, on the other hand, shows systematic decrease with increasing Na content. This suggests that the increasing spacing of O-Co-O layer could effectively reduce the thermal conductivity of Na{sub x}Co{sub 2}O{sub 4}.« less

Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion

NASA Astrophysics Data System (ADS)

Kim, Jong Cheol; Kim, Jongsik; Xin, Yan; Lee, Jinhyung; Kim, Young-Gyun; Subhash, Ghatu; Singh, Rajiv K.; Arjunan, Arul C.; Lee, Haigun

2018-05-01

The continuous demand on miniaturized electronic circuits bearing high power density illuminates the need to modify the silicon-on-insulator-based chip architecture. This is because of the low thermal conductivity of the few hundred nanometer-thick insulator present between the silicon substrate and active layers. The thick insulator is notorious for releasing the heat generated from the active layers during the operation of devices, leading to degradation in their performance and thus reducing their lifetime. To avoid the heat accumulation, we propose a method to fabricate the silicon-on-diamond (SOD) microstructure featured by an exceptionally thin silicon oxycarbide interlayer (˜3 nm). While exploiting the diamond as an insulator, we employ spark plasma sintering to render the silicon directly fused to the diamond. Notably, this process can manufacture the SOD microarchitecture via a simple/rapid way and incorporates the ultra-thin interlayer for minute thermal resistance. The method invented herein expects to minimize the thermal interfacial resistance of the devices and is thus deemed as a breakthrough appealing to the current chip industry.

Topical meeting on optical interference coatings (OIC'2001): manufacturing problem.

PubMed

Dobrowolski, J A; Browning, Stephen; Jacobson, Michael; Nadal, Maria

2002-06-01

Measurements are presented of the experimental filters submitted to the first optical thin-film manufacturing problem posed in conjunction with the Topical Meeting on Optical Interference Coatings, in which the object was to produce multilayers with spectral transmittance and reflectance curves that were as close as possible to the target values that were specified in the 400- to 600-nm spectral region. No limit was set on the overall thickness of the solutions or the number of layers used in their construction. The participants were free to use the coating materials of their choice. Six different groups submitted a total of 11 different filters for evaluation. Three different physical vapor deposition processes were used for the manufacture of the coatings: magnetron sputtering, ion-beam sputtering, and plasma-ion-assisted, electron-beam gun evaporation. The solutions ranged in metric thickness from 758 to 4226 nm and consisted of between 8 and 27 layers. For all but two of the samples submitted, the average rms departure of the measured transmittances and reflectances from the target values in the spectral region of interest was between 0.98% and 1.55%.

Formaldehyde gas sensor based on TiO2 thin membrane integrated with nano silicon structure

NASA Astrophysics Data System (ADS)

Zheng, Xuan; Ming, An-jie; Ye, Li; Chen, Feng-hua; Sun, Xi-long; Liu, Wei-bing; Li, Chao-bo; Ou, Wen; Wang, Wei-bing; Chen, Da-peng

2016-07-01

An innovative formaldehyde gas sensor based on thin membrane type metal oxide of TiO2 layer was designed and fabricated. This sensor under ultraviolet (UV) light emitting diode (LED) illumination exhibits a higher response to formaldehyde than that without UV illumination at low temperature. The sensitivities of the sensor under steady working condition were calculated for different gas concentrations. The sensitivity to formaldehyde of 7.14 mg/m3 is about 15.91 under UV illumination with response time of 580 s and recovery time of 500 s. The device was fabricated through micro-electro-mechanical system (MEMS) processing technology. First, plasma immersion ion implantation (PIII) was adopted to form black polysilicon, then a nanoscale TiO2 membrane with thickness of 53 nm was deposited by DC reactive magnetron sputtering to obtain the sensing layer. By such fabrication approaches, the nanoscale polysilicon presents continuous rough surface with thickness of 50 nm, which could improve the porosity of the sensing membrane. The fabrication process can be mass-produced for the MEMS process compatibility.

Role of Cu layer thickness on the magnetic anisotropy of pulsed electrodeposited Ni/Cu/Ni tri-layer

NASA Astrophysics Data System (ADS)

Dhanapal, K.; Prabhu, D.; Gopalan, R.; Narayanan, V.; Stephen, A.

2017-07-01

The Ni/Cu/Ni tri-layer film with different thickness of Cu layer was deposited using pulsed electrodeposition method. The XRD pattern of all the films show the formation of fcc structure of nickel and copper. This shows the orientated growth in the (2 2 0) plane of the layered films as calculated from the relative intensity ratio. The layer formation in the films were observed from cross sectional view using FE-SEM and confirms the decrease in Cu layer thickness with decreasing deposition time. The magnetic anisotropy behaviour was measured using VSM with two different orientations of layered film. This shows that increasing anisotropy energy with decreasing Cu layer thickness and a maximum of  -5.13  ×  104 J m-3 is observed for copper deposited for 1 min. From the K eff.t versus t plot, development of perpendicular magnetic anisotropy in the layered system is predicted below 0.38 µm copper layer thickness.

Comparing Production and Placement of Warm-Mix Asphalt to Traditional Hot-Mix Asphalt for Constructing Airfield Pavements

DTIC Science & Technology

2013-08-01

Sasobit® STA 0+35 cross-section layer thicknesses as constructed............................... 36  Figure 50. Evotherm ™ center-line layer thicknesses...as constructed. ................................................ 37  Figure 51. Evotherm ™ STA 0+15 cross-section layer thicknesses as constructed...37  Figure 52. Evotherm ™ STA 0+25 cross-section layer thicknesses as constructed. .......................... 38  Figure 53

Influence of interfaces density and thermal processes on mechanical stress of PECVD silicon nitride

NASA Astrophysics Data System (ADS)

Picciotto, A.; Bagolini, A.; Bellutti, P.; Boscardin, M.

2009-10-01

The paper focuses on a particular silicon nitride thin film (SiN x) produced by plasma enahanced chemical vapor deposition (PECVD) technique with high deposition rate (26 nm/min) and low values of mechanical stress (<100 MPa). This was perfomed with mixed frequency procedure varying the modulation of high frequency at 13.56 MHz and low frequency at 308 kHz of RF power supply during the deposition, without changing the ratio of reaction gases. Low stress silicon nitride is commonly obtained by tailoring the thickness ratio of high frequency vs. low frequency silicon nitride layers. The attention of this work was directed to the influence of the number of interfaces per thickness unit on the stress characteristics of the deposited material. Two sets of wafer samples were deposited with low stress silicon nitride, with a thickness of 260 nm and 2 μm, respectively. Thermal annealing processes at 380 and 520 °C in a inert enviroment were also performed on the wafers. The Stoney-Hoffman model was used to estimate the stress values by wafer curvature measurement with a mechanical surface profilometer: the stress was calculated for the as-deposited layer, and after each annealing process. The thickness and the refractive index of the SiN x were also measured and charaterized by variable angle spectra elliposometry (VASE) techinique. The experimental measurements were performed at the MT-LAB, IRST (Istituto per la Ricerca Scientifica e Tecnologica) of Bruno Kessler Foundation for Research in Trento.

Study of interlayer coupling between FePt and FeCoB thin films through MgO spacer layer

NASA Astrophysics Data System (ADS)

Singh, Sadhana; Kumar, Dileep; Gupta, Mukul; Reddy, V. Raghvendra

2017-05-01

Interlayer exchange coupling between hard-FePt and soft-FeCoB magnetic layers has been studied with increasing thickness of insulator MgO spacer layer in FePt/MgO/FeCoB sandwiched structure. A series of the samples were prepared in identical condition using ion beam sputtering method and characterized for their magnetic and structural properties using magneto-optical Kerr effect (MOKE) and X-ray reflectivity measurements. The nature of coupling between FePt and FeCoB was found to be ferromagnetic which decreases exponentially with increasing thickness of MgO layer. At very low thickness of MgO layer, both layers were found strongly coupled thus exhibiting coherent magnetization reversal. At higher thickness, both layers were found decoupled and magnetization reversal occurred at different switching fields. Strong coupling at very low thickness is attributed to pin holes in MgO layer which lead to direct coupling whereas on increasing thickness, coupling may arise due to magneto-static interactions.

Metaporous layer to overcome the thickness constraint for broadband sound absorption

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jieun; Lee, Joong Seok; Kim, Yoon Young, E-mail: yykim@snu.ac.kr

The sound absorption of a porous layer is affected by its thickness, especially in a low-frequency range. If a hard-backed porous layer contains periodical arrangements of rigid partitions that are coordinated parallel and perpendicular to the direction of incoming sound waves, the lower bound of the effective sound absorption can be lowered much more and the overall absorption performance enhanced. The consequence of rigid partitioning in a porous layer is to make the first thickness resonance mode in the layer appear at much lower frequencies compared to that in the original homogeneous porous layer with the same thickness. Moreover, appropriatemore » partitioning yields multiple thickness resonances with higher absorption peaks through impedance matching. The physics of the partitioned porous layer, or the metaporous layer, is theoretically investigated in this study.« less

Comparison of the quality of single-crystal diamonds grown on two types of seed substrates by MPCVD

NASA Astrophysics Data System (ADS)

Zhao, Yun; Guo, Yanzhao; Lin, Liangzhen; Zheng, Yuting; Hei, Lifu; Liu, Jinlong; Wei, Junjun; Chen, Liangxian; Li, Chengming

2018-06-01

Microwave plasma chemical vapor deposition (MPCVD) was used to grow single-crystal diamonds on two types of single-crystal diamond seed substrates prepared by high-pressure, high-temperature (HPHT) and chemical vapor deposition (CVD) methods. The quality of diamonds grown on the different seed substrates was compared. Fluorescence characteristics showed that the sectors of the HPHT seed substrates were obviously partitioned. Raman and absorption spectra showed that the CVD seed substrate produced higher-quality crystals with fewer nitrogen impurities. X-ray topography showed that the HPHT seed substrate had obvious growth sector boundaries, inclusions, dislocations, and stacking faults. The polarization characteristics of HPHT seed substrate were obvious, and the stress distribution was not uniform. When etching HPHT and CVD seed substrates using the same parameters, the etching morphology and extent of different growth sectors of the two substrates differed. Although extended defects were inevitably formed at the interface and propagated in the CVD layer, the dislocation density of a 1 mm-thick CVD layer grown on a CVD seed substrate was only half that of a 1 mm-thick CVD layer grown on an HPHT seed substrate. Therefore, the use of CVD seed substrate enabled the growth of a relatively higher-quality CVD single-crystal diamond.

Kinetic Migration of Diethylhexyl Phthalate in Functional PVC Films

NASA Astrophysics Data System (ADS)

Fei, Fei; Liu, Zhongwei; Chen, Qiang; Liu, Fuping

2012-02-01

Plasticizers that are generally used in plastics to produce flexible food packaging materials have proved to cause reproductive system problems and women's infertility. A long-term consumption may even cause cancer diseases. Hence a nano-scale layer, named as functional barrier layer, was deposited on the plastic surface to prevent plasticizer diethylhexyl phthalate's (DEHP) migration from plastics to foods. The feasibility of functional barrier layer i.e. SiOx coating through plasma enhanced chemical vapor deposition (PECVD) process was then described in this paper. We used Fourier transform infrared spectroscopy (FTIR) to analyze the chemical composition of coatings, scanning electron microscope (SEM) to explore the topography of the coating surfaces, surface profilemeter to measure thickness of coatings, and high-performance liquid chromatography (HPLC) to evaluate the barrier properties of coatings. The results have clearly shown that the coatings can perfectly block the migration of the DEHP from plastics to their containers. It is also concluded that process parameters significantly influence the block efficiency of the coatings. When the deposition conditions of SiOx coatings were optimized, i.e. 50 W of the discharge power, 4:1 of ratio of O2: HMDSO, and ca.100 nm thickness of SiOx, 71.2% of the DEHP was effectively blocked.

Lag and light-transfer characteristics of amorphous selenium photoconductive film with tellurium-doped layer

NASA Astrophysics Data System (ADS)

Park, Wug-Dong; Tanioka, Kenkichi

2016-07-01

Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) films have been used for highly sensitive imaging devices. To study a-Se HARP films for a solid-state image sensor, current-voltage, lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films are investigated. Also, to clarify a suitable Te-doped a-Se layer thickness in the a-Se photoconductor, we considered the effects of Te-doped layer thickness on the lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films. The threshold field, at which avalanche multiplication occurs in the a-Se HARP targets, decreases when the Te-doped layer thickness increases. The lag of 0.4-µm-thick a-Se HARP targets with Te-doped layers is higher than that of the target without Te doping. The lag of the targets with Te-doped layers is caused by the electrons trapped in the Te-doped layers within the 0.4-µm-thick a-Se HARP films. From the results of the spectral response measurement of about 15 min, the 0.4-µm-thick a-Se HARP targets with Te-doped layers of 90 and 120 nm are observed to be unstable owing to the electrons trapped in the Te-doped a-Se layer. From the light-transfer characteristics of 0.4-µm-thick a-Se HARP targets, as the slope at the operating point of signal current-voltage characteristics in the avalanche mode increases, the γ of the a-Se HARP targets decreases. Considering the effects of dark current on the lag and spectral response characteristics, a Te-doped layer of 60 nm is suitable for 0.4-µm-thick a-Se HARP films.

Effects of surface passivation dielectrics on carrier transport in AlGaN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Oh, Sejoon; Jang, Han-Soo; Choi, Chel-Jong; Cho, Jaehee

2018-04-01

Dielectric layers prepared by different deposition methods were used for the surface passivation of AlGaN/GaN heterostructure field-effect transistors (HFETs) and the corresponding electrical characteristics were examined. Increases in the sheet charge density and the maximum drain current by approximately 45% and 28%, respectively, were observed after the deposition of a 100 nm-thick SiO2 layer by plasma-enhanced chemical vapor deposition (PECVD) on the top of the AlGaN/GaN HFETs. However, SiO2 deposited by a radio frequency (rf) sputter system had the opposite effect. As the strain applied to AlGaN was influenced by the deposition methods used for the dielectric layers, the carrier transport in the two-dimensional electron gas formed at the interface between AlGaN and GaN was affected accordingly.

Retention in porous layer pillar array planar separation platforms

DOE PAGES

Lincoln, Danielle R.; Lavrik, Nickolay V.; Kravchenko, Ivan I.; ...

2016-08-11

Here, this work presents the retention capabilities and surface area enhancement of highly ordered, high-aspect-ratio, open-platform, two-dimensional (2D) pillar arrays when coated with a thin layer of porous silicon oxide (PSO). Photolithographically prepared pillar arrays were coated with 50–250 nm of PSO via plasma-enhanced chemical vapor deposition and then functionalized with either octadecyltrichlorosilane or n-butyldimethylchlorosilane. Theoretical calculations indicate that a 50 nm layer of PSO increases the surface area of a pillar nearly 120-fold. Retention capabilities were tested by observing capillary-action-driven development under various conditions, as well as by running one-dimensional separations on varying thicknesses of PSO. Increasing the thicknessmore » of PSO on an array clearly resulted in greater retention of the analyte(s) in question in both experiments. In culmination, a two-dimensional separation of fluorescently derivatized amines was performed to further demonstrate the capabilities of these fabricated platforms.« less

Retention in porous layer pillar array planar separation platforms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lincoln, Danielle R.; Lavrik, Nickolay V.; Kravchenko, Ivan I.

Here, this work presents the retention capabilities and surface area enhancement of highly ordered, high-aspect-ratio, open-platform, two-dimensional (2D) pillar arrays when coated with a thin layer of porous silicon oxide (PSO). Photolithographically prepared pillar arrays were coated with 50–250 nm of PSO via plasma-enhanced chemical vapor deposition and then functionalized with either octadecyltrichlorosilane or n-butyldimethylchlorosilane. Theoretical calculations indicate that a 50 nm layer of PSO increases the surface area of a pillar nearly 120-fold. Retention capabilities were tested by observing capillary-action-driven development under various conditions, as well as by running one-dimensional separations on varying thicknesses of PSO. Increasing the thicknessmore » of PSO on an array clearly resulted in greater retention of the analyte(s) in question in both experiments. In culmination, a two-dimensional separation of fluorescently derivatized amines was performed to further demonstrate the capabilities of these fabricated platforms.« less

Modeling of reduced secondary electron emission yield from a foam or fuzz surface

DOE PAGES

Swanson, Charles; Kaganovich, Igor D.

2018-01-10

Complex structures on a material surface can significantly reduce the total secondary electron emission yield from that surface. A foam or fuzz is a solid surface above which is placed a layer of isotropically aligned whiskers. Primary electrons that penetrate into this layer produce secondary electrons that become trapped and do not escape into the bulk plasma. In this manner the secondary electron yield (SEY) may be reduced. We developed an analytic model and conducted numerical simulations of secondary electron emission from a foam to determine the extent of SEY reduction. We find that the relevant condition for SEY minimization ismore » $$\\bar{u}$$≡AD/2>>1 while D <<1, where D is the volume fill fraction and A is the aspect ratio of the whisker layer, the ratio of the thickness of the layer to the radius of the fibers. As a result, we find that foam cannot reduce the SEY from a surface to less than 0.3 of its flat value.« less

Comparison of tungsten nano-tendrils grown in Alcator C-Mod and linear plasma devices

NASA Astrophysics Data System (ADS)

Wright, G. M.; Brunner, D.; Baldwin, M. J.; Bystrov, K.; Doerner, R. P.; Labombard, B.; Lipschultz, B.; De Temmerman, G.; Terry, J. L.; Whyte, D. G.; Woller, K. B.

2013-07-01

Growth of tungsten nano-tendrils ("fuzz") has been observed for the first time in the divertor region of a high-power density tokamak experiment. After 14 consecutive helium L-mode discharges in Alcator C-Mod, the tip of a tungsten Langmuir probe at the outer strike point was fully covered with a layer of nano-tendrils. The depth of the W fuzz layer (600 ± 150 nm) is consistent with an empirical growth formula from the PISCES experiment. Re-creating the C-Mod exposures as closely as possible in Pilot-PSI experiment can produce nearly-identical nano-tendril morphology and layer thickness at surface temperatures that agree with uncertainties with the C-Mod W probe temperature data. Helium concentrations in W fuzz layers are measured at 1-4 at.%, which is lower than expected for the observed sub-surface voids to be filled with several GPa of helium pressure. This possibly indicates that the void formation is not pressure driven.

Modeling of reduced secondary electron emission yield from a foam or fuzz surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swanson, Charles; Kaganovich, Igor D.

Complex structures on a material surface can significantly reduce the total secondary electron emission yield from that surface. A foam or fuzz is a solid surface above which is placed a layer of isotropically aligned whiskers. Primary electrons that penetrate into this layer produce secondary electrons that become trapped and do not escape into the bulk plasma. In this manner the secondary electron yield (SEY) may be reduced. We developed an analytic model and conducted numerical simulations of secondary electron emission from a foam to determine the extent of SEY reduction. We find that the relevant condition for SEY minimization ismore » $$\\bar{u}$$≡AD/2>>1 while D <<1, where D is the volume fill fraction and A is the aspect ratio of the whisker layer, the ratio of the thickness of the layer to the radius of the fibers. As a result, we find that foam cannot reduce the SEY from a surface to less than 0.3 of its flat value.« less

The enhancement mechanism of thin plasma layer on antenna radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Chunsheng, E-mail: wangcs@hit.edu.cn; Jiang, Binhao; Li, Xueai

A model of plasma-antenna is carried out to study the radiation enhancement mechanism of antenna covered by thin plasma layer. The results show when the radiation intensity achieves maximum, a region of equal electric field is formed due to the reflection of electric field at the interface of plasma and air. The plasma layer acted as an extension of the antenna. Furthermore, the shape of plasma layer is changed to verify the effect of plasma boundary on antenna radiation. The study shows the effect of thin plasma layer on electromagnetic field and provides a type of plasma antenna.

Relative Translucency of a Multilayered Ultratranslucent Zirconia Material.

PubMed

Shamseddine, Loubna; Majzoub, Zeina

2017-12-01

The aim of this study was to compare the translucency parameter (TP) of ultratranslucent multilayered (UTML) zirconia according to thickness and layer level. Rectangles of UTML zirconia with four layers [dentin layer (DEL), first transitional layer (FTL), second transitional layer (STL), and enamel layer (ENL)] and four different thicknesses (0.4, 0.6, 0.8, and 1 mm) were milled from blanks. Digital images were taken in a dark studio against white and black backgrounds under simulated daylight illumination and international commission on illumination (CIE) Lab* color values recorded using Photoshop Creative Cloud software. The TP was computed and compared according to thickness and layer level using analysis of variance (ANOVA) followed by Bonferroni post hoc analysis for multiple comparisons. Significance was set at p < 0.05. In each thickness, TP values were similar between any two layers. The significant effect of thickness on the TP was observed only in the first two layers. In the DEL, translucency was significantly greater at 0.4 mm than all other thicknesses. In the FTL, differences were significant between 0.4 and 0.8 mm and between 0.4 and 1 mm. The investigated zirconia does not seem to show gradational changes in relative translucency from dentin to enamel levels regardless of the thickness used. Thickness affected the TP only in the first two layers with better translu-cency at 0.4 mm. Since relative translucency does not seem to be significantly different between layers, clinicians can modify the apicocoronal positioning of the UTML layers within the restoration according to the desired Chroma without any implications on the clinically perceived translucency. While the thickness of 0.4 mm may be suggested for anterior esthetic veneers because of its higher translucency, the other thicknesses of 0.6 to 1 mm can be used to mask colored abutments in full contour restorations.

Non-Uniform Thickness Electroactive Device

NASA Technical Reports Server (NTRS)

Su, Ji (Inventor); Harrison, Joycelyn S. (Inventor)

2006-01-01

An electroactive device comprises at least two layers of material, wherein at least one layer is an electroactive material and wherein at least one layer is of non-uniform thickness. The device can be produced in various sizes, ranging from large structural actuators to microscale or nanoscale devices. The applied voltage to the device in combination with the non-uniform thickness of at least one of the layers (electroactive and/or non-electroactive) controls the contour of the actuated device. The effective electric field is a mathematical function of the local layer thickness. Therefore, the local strain and the local bending/ torsion curvature are also a mathematical function of the local thickness. Hence the thinnest portion of the actuator offers the largest bending and/or torsion response. Tailoring of the layer thicknesses can enable complex motions to be achieved.

Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

NASA Astrophysics Data System (ADS)

Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

2018-01-01

The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.

The dependence of the modulation transfer function on the blocking layer thickness in amorphous selenium x-ray detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hunter, David M.; Belev, Gueorgi; DeCrescenzo, Giovanni

2007-08-15

Blocking layers are used to reduce leakage current in amorphous selenium detectors. The effect of the thickness of the blocking layer on the presampling modulation transfer function (MTF) and on dark current was experimentally determined in prototype single-line CCD-based amorphous selenium (a-Se) x-ray detectors. The sampling pitch of the detectors evaluated was 25 {mu}m and the blocking layer thicknesses varied from 1 to 51 {mu}m. The blocking layers resided on the signal collection electrodes which, in this configuration, were used to collect electrons. The combined thickness of the blocking layer and a-Se bulk in each detector was {approx}200 {mu}m. Asmore » expected, the dark current increased monotonically as the thickness of the blocking layer was decreased. It was found that if the blocking layer thickness was small compared to the sampling pitch, it caused a negligible reduction in MTF. However, the MTF was observed to decrease dramatically at spatial frequencies near the Nyquist frequency as the blocking layer thickness approached or exceeded the electrode sampling pitch. This observed reduction in MTF is shown to be consistent with predictions of an electrostatic model wherein the image charge from the a-Se is trapped at a characteristic depth within the blocking layer, generally near the interface between the blocking layer and the a-Se bulk.« less

Magnetic Reconnection in Extreme Astrophysical Environments

NASA Astrophysics Data System (ADS)

Uzdensky, Dmitri

Magnetic reconnection is a fundamental plasma physics process of breaking ideal-MHD's frozen-in constraints on magnetic field connectivity and of dramatic rearranging of the magnetic topol-ogy, which often leads to a violent release of the free magnetic energy. Reconnection has long been acknowledged to be of great importance in laboratory plasma physics (magnetic fusion) and in space and solar physics (responsible for solar flares and magnetospheric substorms). In addition, its importance in Astrophysics has been increasingly recognized in recent years. However, due to a great diversity of astrophysical environments, the fundamental physics of astrophysical magnetic reconnection can be quite different from that of the traditional recon-nection encountered in the solar system. In particular, environments like the solar corona and the magnetosphere are characterized by relatively low energy densities, where the plasma is ad-equately described as a mixture of electrons and ions whose numbers are conserved and where the dissipated magnetic energy basically stays with the plasma. In contrast, in many high-energy astrophysical phenomena the energy density is so large that photons play as important a role as electrons and ions and, in particular, radiation pressure and radiative cooling become dominant. In this talk I focus on the most extreme case of high-energy-density astrophysical reconnec-tion — reconnection of magnetar-strength (1014 - 1015 Gauss) magnetic fields, important for giant flares in soft-gamma repeaters (SGRs), and for rapid magnetic energy release in either the central engines or in the relativistic jets of Gamma Ray Bursts (GRBs). I outline the key relevant physical processes and present a new theoretical picture of magnetic reconnection in these environments. The corresponding magnetic energy density is so enormous that, when suddenly released, it inevitably heats the plasma to relativistic temperatures, resulting in co-pious production of electron-positron pairs. The pairs make the reconnection layer optically thick, efficiently trapping gamma-ray photons and ensuring a local thermodynamic equilibrium between the radiation and the plasma. The plasma pressure inside the layer is then dominated by the radiation and pair pressure. At the same time, the timescale for radiation diffusion across the layer may still be much shorter than the global Alfven transit time along the layer, and hence the effects of radiative cooling on the thermodynamics of the layer need to be taken into account. In other words, the reconnection problem in this regime necessarily becomes a radiative transfer problem. In addition, the extremely high pair density, set by the local ther-modynamic equilibrium essentially independently of the upstream plasma density, can make the reconnection layer highly collisional, thereby justifying the use of resistive MHD (with Spitzer and Compton resistivities). The presence of all these processes calls for a substantial revision of our traditional physical picture of reconnection when applied to these environments. I will de-scribe how the corresponding new theory of reconnection of magnetar-strength magnetic fields ought to be constructed and will conclude by discussing its observational consequences and the prospects for future research.

Deformation Mechanism Map of Cu/Nb Nanoscale Metallic Multilayers as a Function of Temperature and Layer Thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Snel, J.; Monclús, M. A.; Castillo-Rodríguez, M.

The mechanical properties and deformation mechanisms of Cu/Nb nanoscale metallic multilayers (NMMs) manufactured by accumulative roll bonding are studied at 25°C and 400°C. Cu/Nb NMMs with individual layer thicknesses between 7 nm and 63 nm were tested by in situ micropillar compression inside a scanning electron microscope. Yield strength, strain-rate sensitivities and activation volumes were obtained from the pillar compression tests. The deformed micropillars were examined under scanning and transmission electron microscopy in order to examine the deformation mechanisms active for different layer thicknesses and temperatures. The paper suggests that room temperature deformation was determined by dislocation glide at largermore » layer thicknesses and interface-related mechanisms at the thinner layer thicknesses. The high-temperature compression tests, in contrast, revealed superior thermo-mechanical stability and strength retention for the NMMs with larger layer thicknesses with deformation controlled by dislocation glide. A remarkable transition in deformation mechanism occurred as the layer thickness decreased, to a deformation response controlled by diffusion processes along the interfaces, which resulted in temperature-induced softening. Finally, a deformation mechanism map, in terms of layer thickness and temperature, is proposed from the results obtained in this investigation.« less

Deformation Mechanism Map of Cu/Nb Nanoscale Metallic Multilayers as a Function of Temperature and Layer Thickness

DOE PAGES

Snel, J.; Monclús, M. A.; Castillo-Rodríguez, M.; ...

2017-08-29

The mechanical properties and deformation mechanisms of Cu/Nb nanoscale metallic multilayers (NMMs) manufactured by accumulative roll bonding are studied at 25°C and 400°C. Cu/Nb NMMs with individual layer thicknesses between 7 nm and 63 nm were tested by in situ micropillar compression inside a scanning electron microscope. Yield strength, strain-rate sensitivities and activation volumes were obtained from the pillar compression tests. The deformed micropillars were examined under scanning and transmission electron microscopy in order to examine the deformation mechanisms active for different layer thicknesses and temperatures. The paper suggests that room temperature deformation was determined by dislocation glide at largermore » layer thicknesses and interface-related mechanisms at the thinner layer thicknesses. The high-temperature compression tests, in contrast, revealed superior thermo-mechanical stability and strength retention for the NMMs with larger layer thicknesses with deformation controlled by dislocation glide. A remarkable transition in deformation mechanism occurred as the layer thickness decreased, to a deformation response controlled by diffusion processes along the interfaces, which resulted in temperature-induced softening. Finally, a deformation mechanism map, in terms of layer thickness and temperature, is proposed from the results obtained in this investigation.« less

Electrophoretic deposition of bi-layered LSM/LSM-YSZ cathodes for solid oxide fuel cell

NASA Astrophysics Data System (ADS)

Itagaki, Yoshiteru; Watanabe, Shinji; Yamaji, Tsuyoshi; Asamoto, Makiko; Yahiro, Hidenori; Sadaoka, Yoshihiko

2012-09-01

Bi-layered cathodes with the LSM/LSM-YSZ structure for solid oxide fuel cells were successfully formed on the carbon-sputtered surface of a YSZ sheet by electrophoretic deposition (EPD). The thicknesses of the first layer of LSM-YSZ (LY) and the second layer of La0.8Sr0.2MnO3 (LSM) could be controlled by adjusting the deposition time in the EPD process. The cathodic properties of the bi-layered structures were superior to those of the mono-layered structures, and were dependent on the thickness of each layer. Decreasing the thickness of the first layer and increasing that of the second layer tended to reduce both polarization and ohmic resistances. The optimal thickness of the first layer at the operating temperature of 600 °C was 4 μm, suggesting that an effective three-phase boundary was extended from the interface between the electrolyte and cathode film to around 4 μm thickness.

Improved stability and efficiency of perovskite solar cells with submicron flexible barrier films deposited in air

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rolston, Nicholas; Printz, Adam D.; Hilt, Florian

Here in this paper, we report on submicron organosilicate barrier films produced rapidly in air by a scalable spray plasma process that improves both the stability and efficiency of perovskite solar cells. The plasma is at sufficiently low temperature to prevent damage to the underlying layers. Oxidizing species and heat from the plasma improve device performance by enhancing both interfacial contact and the conductivity of the hole transporting layer. The thickness of the barrier films is tunable and transparent over the entire visible spectrum. The morphology and density of the barrier are shown to improve with the addition of amore » fluorine-based precursor. Devices with submicron coatings exhibited significant improvements in stability, maintaining 92% of their initial power conversion efficiencies after more than 3000 h in dry heat (85 °C, 25% RH) while also being resistant to degradation under simulated operational conditions of continuous exposure to light, heat, and moisture. X-ray diffraction measurements performed while heating showed the barrier film dramatically slows the formation of PbI 2. The barrier films also are compatible with flexible devices, exhibiting no signs of cracking or delamination after 10000 bending cycles on a 127 μm substrate with a bending radius of 1 cm.« less

Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

NASA Astrophysics Data System (ADS)

Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca I Cabarrocas, Pere

2016-05-01

The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs.

Improved stability and efficiency of perovskite solar cells with submicron flexible barrier films deposited in air

DOE PAGES

Rolston, Nicholas; Printz, Adam D.; Hilt, Florian; ...

2017-10-27

Here in this paper, we report on submicron organosilicate barrier films produced rapidly in air by a scalable spray plasma process that improves both the stability and efficiency of perovskite solar cells. The plasma is at sufficiently low temperature to prevent damage to the underlying layers. Oxidizing species and heat from the plasma improve device performance by enhancing both interfacial contact and the conductivity of the hole transporting layer. The thickness of the barrier films is tunable and transparent over the entire visible spectrum. The morphology and density of the barrier are shown to improve with the addition of amore » fluorine-based precursor. Devices with submicron coatings exhibited significant improvements in stability, maintaining 92% of their initial power conversion efficiencies after more than 3000 h in dry heat (85 °C, 25% RH) while also being resistant to degradation under simulated operational conditions of continuous exposure to light, heat, and moisture. X-ray diffraction measurements performed while heating showed the barrier film dramatically slows the formation of PbI 2. The barrier films also are compatible with flexible devices, exhibiting no signs of cracking or delamination after 10000 bending cycles on a 127 μm substrate with a bending radius of 1 cm.« less

Thickness dependence of the levitation performance of double-layer high-temperature superconductor bulks above a magnetic rail

NASA Astrophysics Data System (ADS)

Sun, R. X.; Zheng, J.; Liao, X. L.; Che, T.; Gou, Y. F.; He, D. B.; Deng, Z. G.

2014-10-01

A double-layer high-temperature superconductor (HTSC) arrangement was proposed and proved to be able to bring improvements to both levitation force and guidance force compared with present single-layer HTSC arrangement. To fully exploit the applied magnetic field by a magnetic rail, the thickness dependence of a double-layer HTSC arrangement on the levitation performance was further investigated in the paper. In this study, the lower-layer bulk was polished step by step to different thicknesses, and the upper-layer bulk with constant thickness was directly superimposed on the lower-layer one. The levitation force and the force relaxation of the double-layer HTSC arrangement were measured above a Halbach magnetic rail. Experimental result shows that a bigger levitation force and a less levitation force decay could be achieved by optimizing the thickness of the lower-layer bulk HTSC. This thickness optimization method could be applied together with former reported double-layer HTSC arrangement method with aligned growth sector boundaries pattern. This series of study on the optimized combination method do bring a significant improvement on the levitation performance of present HTS maglev systems.

Double layer field shaping systems for toroidal plasmas

DOEpatents

Ohyabu, Nobuyoshi

1982-01-01

Methods and apparatus for plasma generation, confinement and control such as Tokamak plasma systems are described having a two layer field shaping coil system comprising an inner coil layer close to the plasma and an outer coil layer to minimize the current in the inner coil layer.

Development of TiO2 containing hardmasks through plasma-enhanced atomic layer deposition

NASA Astrophysics Data System (ADS)

De Silva, Anuja; Seshadri, Indira; Chung, Kisup; Arceo, Abraham; Meli, Luciana; Mendoza, Brock; Sulehria, Yasir; Yao, Yiping; Sunder, Madhana; Truong, Hoa; Matham, Shravan; Bao, Ruqiang; Wu, Heng; Felix, Nelson M.; Kanakasabapathy, Sivananda

2017-04-01

With the increasing prevalence of complex device integration schemes, trilayer patterning with a solvent strippable hardmask can have a variety of applications. Spin-on metal hardmasks have been the key enabler for selective removal through wet strip when active areas need to be protected from dry etch damage. As spin-on metal hardmasks require a dedicated track to prevent metal contamination and are limited in their ability to scale down thickness without compromising on defectivity, there has been a need for a deposited hardmask solution. Modulation of film composition through deposition conditions enables a method to create TiO2 films with wet etch tunability. This paper presents a systematic study on development and characterization of plasma-enhanced atomic layer deposited (PEALD) TiO2-based hardmasks for patterning applications. We demonstrate lithographic process window, pattern profile, and defectivity evaluation for a trilayer scheme patterned with PEALD-based TiO2 hardmask and its performance under dry and wet strip conditions. Comparable structural and electrical performance is shown for a deposited versus a spin-on metal hardmask.

Laser acceleration of protons using multi-ion plasma gaseous targets

DOE PAGES

Liu, Tung -Chang; Shao, Xi; Liu, Chuan -Sheng; ...

2015-02-01

We present a theoretical and numerical study of a novel acceleration scheme by applying a combination of laser radiation pressure and shielded Coulomb repulsion in laser acceleration of protons in multi-species gaseous targets. By using a circularly polarized CO₂ laser pulse with a wavelength of 10 μm—much greater than that of a Ti: Sapphire laser—the critical density is significantly reduced, and a high-pressure gaseous target can be used to achieve an overdense plasma. This gives us a larger degree of freedom in selecting the target compounds or mixtures, as well as their density and thickness profiles. By impinging such amore » laser beam on a carbon–hydrogen target, the gaseous target is first compressed and accelerated by radiation pressure until the electron layer disrupts, after which the protons are further accelerated by the electron-shielded carbon ion layer. An 80 MeV quasi-monoenergetic proton beam can be generated using a half-sine shaped laser beam with a peak power of 70 TW and a pulse duration of 150 wave periods.« less

Effect of layer thickness on the properties of nickel thermal sprayed steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurisna, Zuhri, E-mail: zuhri-nurisna@yahoo.co.id; Triyono,, E-mail: triyonomesin@uns.ac.id; Muhayat, Nurul, E-mail: nurulmuhayat@staff.uns.ac.id

Thermal arc spray nickel coating is widely used for decorative and functional applications, by improving corrosion resistance, wear resistance, heat resistence or by modifying other properties of the coated materials. There are several properties have been studied. Layer thickness of nickel thermal sprayed steel may be make harder the substrate surface. In this study, the effect of layer thickness of nickel thermal sprayed steel has been investigated. The rectangular substrate specimens were coated by Ni–5 wt.% Al using wire arc spray method. The thickness of coating layers were in range from 0.4 to 1.0 mm. Different thickness of coating layers weremore » conducted to investigate their effect on hardness and morphology. The coating layer was examined by using microvickers and scanning electron microscope with EDX attachment. Generally, the hardness at the interface increased with increasing thickness of coating layers for all specimens due to higher heat input during spraying process. Morphology analysis result that during spraying process aluminum would react with surrounding oxygen and form aluminum oxide at outer surface of splat. Moreover, porosity was formed in coating layers. However, presence porosity is not related to thickness of coating material. The thicker coating layer resulted highesr of hardness and bond strength.« less

Use of shear horizontal waves to distinguish adhesive thickness variation from reduction in bonding strength.

PubMed

Predoi, Mihai Valentin; Ech Cherif El Kettani, Mounsif; Leduc, Damien; Pareige, Pascal; Coné, Khadidiatou

2015-08-01

The capability of shear horizontal (SH) guided waves, to evaluate geometrical imperfections in a bonding layer, is investigated. SH waves are used in a three-layer structure in which the adhesive layer has variable thickness. It is proven that the SH waves are adapting to the local thickness of the adhesive layer (adiabatic waves). This is particularly useful in case of small thickness variations, which is of technical interest. The influence of thickness and stiffness of the adhesive layer on the wavenumbers are investigated. The selected SH2 mode is proven to be very sensitive to the adhesive layer thickness variation in the given frequency range and considerably less sensitive to the adhesive stiffness variation. This property is due to its specific displacement field and is important in practical applications, such as inspection techniques based on SH waves, in order to avoid false alarms.

Organic field effect transistors - Study of performance parameters for different dielectric layer thickness

NASA Astrophysics Data System (ADS)

Assis, Anu; Shahul Hameed T., A.; Predeep, P.

2017-06-01

Mobility and current handling capabilities of Organic Field Effect Transistor (OFET) are vitally important parameters in the electrical performance where the material parameters and thickness of different layers play significant role. In this paper, we report the simulation of an OFET using multi physics tool, where the active layer is pentacene and Poly Methyl Methacrylate (PMMA) forms the dielectric. Electrical characterizations of the OFET on varying the thickness of the dielectric layer from 600nm to 400nm are simulated and drain current, transconductance and mobility are analyzed. In the study it is found that even though capacitance increases with reduction in dielectric layer thickness, the transconductance effect is reflected many more times in the mobility which in turn could be attributed to the variations in transverse electric field. The layer thickness below 300nm may result in gate leakage current points to the requirement of optimizing the thickness of different layers for better performance.

Nonlinear stability of Halley comethosheath with transverse plasma motion

NASA Technical Reports Server (NTRS)

Srivastava, Krishna M.; Tsurutani, Bruce T.

1994-01-01

Weakly nonlinear Magneto Hydrodynamic (MHD) stability of the Halley cometosheath determined by the balance between the outward ion-neutral drag force and the inward Lorentz force is investigated including the transverse plasma motion as observed in the flanks with the help of the method of multiple scales. The eigenvalues and the eigenfunctions are obtained for the linear problem and the time evolution of the amplitude is obtained using the solvability condition for the solution of the second order problem. The diamagnetic cavity boundary and the adjacent layer of about 100 km thickness is found unstable for the travelling waves of certain wave numbers. Halley ionopause has been observed to have strong ripples with a wavelength of several hundred kilometers. It is found that nonlinear effects have stabilizing effect.

Electrical and morphological characterization of transfer-printed Au/Ti/TiO{sub x}/p{sup +}-Si nano- and microstructures with plasma-grown titanium oxide layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weiler, Benedikt, E-mail: benedikt.weiler@nano.ei.tum.de; Nagel, Robin; Albes, Tim

2016-04-14

Highly-ordered, sub-70 nm-MOS-junctions of Au/Ti/TiO{sub x}/p{sup +}-Si were efficiently and reliably fabricated by nanotransfer-printing (nTP) over large areas and their functionality was investigated with respect to their application as MOS-devices. First, we used a temperature-enhanced nTP process and integrated the plasma-oxidation of a nm-thin titanium film being e-beam evaporated directly on the stamp before the printing step without affecting the p{sup +}-Si substrate. Second, morphological investigations (scanning electron microscopy) of the nanostructures confirm the reliable transfer of Au/Ti/TiO{sub x}-pillars of 50 nm, 75 nm, and 100 nm size of superior quality on p{sup +}-Si by our transfer protocol. Third, the fabricated nanodevices are alsomore » characterized electrically by conductive AFM. Fourth, the results are compared to probe station measurements on identically processed, i.e., transfer-printed μm-MOS-structures including a systematic investigation of the oxide formation. The jV-characteristics of these MOS-junctions demonstrate the electrical functionality as plasma-grown tunneling oxides and the effectivity of the transfer-printing process for their large-scale fabrication. Next, our findings are supported by fits to the jV-curves of the plasma-grown titanium oxide by kinetic-Monte-Carlo simulations. These fits allowed us to determine the dominant conduction mechanisms, the material parameters of the oxides and, in particular, a calibration of the thickness depending on applied plasma time and power. Finally, also a relative dielectric permittivity of 12 was found for such plasma-grown TiO{sub x}-layers.« less

Double Layers in Astrophysics

NASA Technical Reports Server (NTRS)

Williams, Alton C. (Editor); Moorehead, Tauna W. (Editor)

1987-01-01

Topics addressed include: laboratory double layers; ion-acoustic double layers; pumping potential wells; ion phase-space vortices; weak double layers; electric fields and double layers in plasmas; auroral double layers; double layer formation in a plasma; beamed emission from gamma-ray burst source; double layers and extragalactic jets; and electric potential between plasma sheet clouds.

Impact of fluorine based reactive chemistry on structure and properties of high moment magnetic material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Xiaoyu, E-mail: xiaoyu.yang@wdc.com; Chen, Lifan; Han, Hongmei

The impact of the fluorine-based reactive ion etch (RIE) process on the structural, electrical, and magnetic properties of NiFe and CoNiFe-plated materials was investigated. Several techniques, including X-ray fluorescence, 4-point-probe, BH looper, transmission electron microscopy (TEM), and electron energy loss spectroscopy (EELS), were utilized to characterize both bulk film properties such as thickness, average composition, Rs, ρ, Bs, Ms, and surface magnetic “dead” layers' properties such as thickness and element concentration. Experimental data showed that the majority of Rs and Bs changes of these bulk films were due to thickness reduction during exposure to the RIE process. ρ and Msmore » change after taking thickness reduction into account were negligible. The composition of the bulk films, which were not sensitive to surface magnetic dead layers with nano-meter scale, showed minimum change as well. It was found by TEM and EELS analysis that although both before and after RIE there were magnetic dead layers on the top surface of these materials, the thickness and element concentration of the layers were quite different. Prior to RIE, dead layer was actually native oxidation layers (about 2 nm thick), while after RIE dead layer consisted of two sub-layers that were about 6 nm thick in total. Sub-layer on the top was native oxidation layer, while the bottom layer was RIE “damaged” layer with very high fluorine concentration. Two in-situ RIE approaches were also proposed and tested to remove such damaged sub-layers.« less

Applying a uniform layer of disinfectant by wiping.

PubMed

Cooper, D W

2000-01-01

Disinfection or sterilization often requires applying a film of liquid to a surface, frequently done by using a wiper as the applicator. The wiper must not only hold a convenient amount of liquid, it must deposit it readily and uniformly. Contact time is critical to disinfection efficacy. Evaporation can limit the contact time. To lengthen the contact time, thickly applied layers are generally preferred. The thickness of such layers can be determined by using dyes or other tracers, as long as the tracers do not significantly affect the liquid's surface tension and viscosity and thus do not affect the thickness of the applied layer. Alternatively, as done here, the thickness of the layer can be inferred from the weight loss of the wiper. Results are reported of experiments on thickness of the layers applied under various conditions. Near saturation, hydrophilic polyurethane foam wipers gave layers roughly 10 microns thick, somewhat less than expected from hydrodynamic theory, but more than knitted polyester or woven cotton. Wipers with large liquid holding capacity, refilled often, should produce more nearly uniform layers. Higher pressures increase saturation in the wiper, tending to thicken the layer, but higher pressures also force liquid from the interface, tending to thin the layer, so the net result could be thicker or thinner layers, and there is likely to be an optimal pressure.

Enhancement in sensitivity of graphene-based zinc oxide assisted bimetallic surface plasmon resonance (SPR) biosensor

NASA Astrophysics Data System (ADS)

Kumar, Rajeev; Kushwaha, Angad S.; Srivastava, Monika; Mishra, H.; Srivastava, S. K.

2018-03-01

In the present communication, a highly sensitive surface plasmon resonance (SPR) biosensor with Kretschmann configuration having alternate layers, prism/zinc oxide/silver/gold/graphene/biomolecules (ss-DNA) is presented. The optimization of the proposed configuration has been accomplished by keeping the constant thickness of zinc oxide (32 nm), silver (32 nm), graphene (0.34 nm) layer and biomolecules (100 nm) for different values of gold layer thickness (1, 3 and 5 nm). The sensitivity of the proposed SPR biosensor has been demonstrated for a number of design parameters such as gold layer thickness, number of graphene layer, refractive index of biomolecules and the thickness of biomolecules layer. SPR biosensor with optimized geometry has greater sensitivity (66 deg/RIU) than the conventional (52 deg/RIU) as well as other graphene-based (53.2 deg/RIU) SPR biosensor. The effect of zinc oxide layer thickness on the sensitivity of SPR biosensor has also been analysed. From the analysis, it is found that the sensitivity increases significantly by increasing the thickness of zinc oxide layer. It means zinc oxide intermediate layer plays an important role to improve the sensitivity of the biosensor. The sensitivity of SPR biosensor also increases by increasing the number of graphene layer (upto nine layer).

Depth-Selective Diagnostics of Thermal Barrier Coatings Incorporating Thermographic Phosphors

NASA Technical Reports Server (NTRS)

Eldridge, J. I.; Bencic, T. J.; Allison, S. W.; Beshears, D. L.

2003-01-01

Thermographic phosphors have been previously demonstrated to provide effective non- contact, emissivity-independent surface temperature measurements. Because of the translucent nature of thermal barrier coatings (TBCs), thermographic-phosphor-based temperature measurements can be extended beyond the surface to provide depth-selective temperature measurements by incorporating the thermographic phosphor layer at the depth where the temperature measurement is desired. In this paper, the use of thermographic phosphor (Y2O3:Eu) luminescence decay time measurements is demonstrated for the first time for through-the-thickness temperature readings up to 1000 C with the phosphor placed beneath a 100-micron-thick TBC (plasma-sprayed 8wt% yttria-stabilized zirconia). With an appropriately chosen excitation wavelength and detection configuration, it is shown that sufficient phosphor emission is generated to provide effective temperature measurements, despite the attenuation of both the excitation and emission intensities by the overlying TBC. This depth-selective temperature measurement capability should prove particularly useful for TBC diagnostics, where a large thermal gradient is typically present across the TBC thickness.

Photovoltaic device having light transmitting electrically conductive stacked films

DOEpatents

Weber, Michael F.; Tran, Nang T.; Jeffrey, Frank R.; Gilbert, James R.; Aspen, Frank E.

1990-07-10

A light transmitting electrically conductive stacked film, useful as a light transmitting electrode, including a first light transmitting electrically conductive layer, having a first optical thickness, a second light transmitting layer, having a second optical thickness different from the optical thickness of the first layer, and an electrically conductive metallic layer interposed between and in initimate contact with the first and second layers.

Layer-by-layer-based silica encapsulation of individual yeast with thickness control.

PubMed

Lee, Hojae; Hong, Daewha; Choi, Ji Yu; Kim, Ji Yup; Lee, Sang Hee; Kim, Ho Min; Yang, Sung Ho; Choi, Insung S

2015-01-01

In the area of cell-surface engineering with nanomaterials, the metabolic and functional activities of the encapsulated cells are manipulated and controlled by various parameters of the artificial shells that encase the cells, such as stiffness and elasticity, thickness, and porosity. The mechanical durability and physicochemical stability of inorganic shells prove superior to layer-by-layer-based organic shells with regard to cytoprotection, but it has been difficult to vary the parameters of inorganic shells including their thickness. In this work, we combine the layer-by-layer technique with a process of bioinspired silicification to control the thickness of the silica shells that encapsulate yeast Saccharomyces cerevisiae cells individually, and investigate the thickness-dependent microbial growth. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Chiral photonic crystals with an anisotropic defect layer.

PubMed

Gevorgyan, A H; Harutyunyan, M Z

2007-09-01

In the present paper we consider some properties of defect modes in chiral photonic crystals with an anisotropic defect layer. We solved the problem by Ambartsumian's layer addition method. We investigated the influence of the defect layer thickness variation and its location in the chiral photonic crystal (CPC) and also its optical axes orientation, as well as of CPC thickness variation on defect mode properties. Variations of the optical thickness of the defect layer have its impact on the defect mode linewidth and the light accumulation in the defect. We obtain that CPCs lose their base property at certain defect layer thicknesses; namely, they lose their diffraction reflection dependence on light polarization. We also show that the circular polarization handedness changes from right-handed to left-handed if the defect layer location is changed, and therefore, such systems can be used to create sources of elliptically polarized light with tunable ellipticity. Some nonreciprocity properties of such systems are investigated, too. In particular, it is also shown that such a system can work as a practically ideal wide band optical diode for circularly polarized incident light provided the defect layer thickness is properly chosen, and it can work as a narrow band diode at small defect layer thicknesses.

Evaluation of retinal nerve fiber layer thickness in the area of apparently normal hemifield in glaucomatous eyes with optical coherence tomography.

PubMed

Kee, Changwon; Cho, Changhwan

2003-06-01

The authors investigated the correlation between visual field defects detected by automated perimetry and the thickness of the retinal nerve fiber layer measured with optical coherence tomography, and examined whether there is a decrease in retinal nerve fiber layer thickness in the apparently normal hemifield of glaucomatous eyes. Forty-one patients with glaucoma and 41 normal control subjects were included in this study. Statistical correlations between the sum of the total deviation of 37 stimuli of each hemifield and the ratio of decrease in retinal nerve fiber layer thickness were evaluated. The statistical difference between the retinal nerve fiber layer thickness of the apparently normal hemifield in glaucomatous eyes and that of the corresponding hemifield in normal subjects was also evaluated. There was a statistically significant correlation in the sum of the total deviation and retinal nerve fiber layer thickness decrease ratio (superior hemifield, P = 0.001; inferior hemifield, P = 0.003). There was no significant decrease in retinal nerve fiber layer thickness in the area that corresponded to the normal visual field in the hemifield defect with respect to the horizontal meridian in glaucomatous eyes (superior side, P = 0.148; inferior side, P = 0.341). Optical coherence tomography was capable of demonstrating and measuring retinal nerve fiber layer abnormalities. No changes in the retinal nerve fiber layer thickness of the apparently normal hemifield were observed in glaucomatous eyes.

Microstructure and opto-electronic properties of Sn-rich Au-Sn diffusive solders

NASA Astrophysics Data System (ADS)

Rerek, T.; Skowronski, L.; Kobierski, M.; Naparty, M. K.; Derkowska-Zielinska, B.

2018-09-01

Microstructural and opto-electronic properties of Au ⧹ Sn and Sn ⧹ Au bilayers, obtained by sequential evaporating of metals on the Si substrate, were investigated by means of atomic force microscopy, X-ray diffraction and spectroscopic ellipsometry. Thicknesses of individual films were established to obtain the atomic ratio of Au:Sn atoms 1:1, 1:2 and 1:4, which were favor the formation of AuSn, AuSn2 and AuSn4, respectively. However, the produced intermatallic compounds were detected as AuSn and AuSn2. Additionally, the unbounded Sn was found. The sequence of deposition of Au and Sn films as well as their thickness strongly affect on the composition, microstructure, optical and electrical properties of the produced layers. The Au ⧹ Sn (Sn on the top) layers were more smooth than Sn ⧹ Au (Au on the top) films. Generally, the Au ⧹ Sn layers exhibit a better electrical and optical properties than Sn ⧹ Au films. The optical parameters: plasma energy, free-carrier damping, mean relaxation time of conduction electrons and optical resistivity were determined from the effective complex dielectric function of the formed Au, Sn and Au-Sn films. The optical resistivity values are in the range from 17.8 μΩ cm to 85.1 μΩ cm and from 29.6 μΩ cm to 113.3 μΩ cm for Au ⧹ Sn and Sn ⧹ Au layers, respectively.

Efficient methylammonium lead iodide perovskite solar cells with active layers from 300 to 900 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Momblona, C.; Malinkiewicz, O.; Soriano, A.

2014-08-01

Efficient methylammonium lead iodide perovskite-based solar cells have been prepared in which the perovskite layer is sandwiched in between two organic charge transporting layers that block holes and electrons, respectively. This configuration leads to stable and reproducible devices that do not suffer from strong hysteresis effects and when optimized lead to efficiencies close to 15%. The perovskite layer is formed by using a dual-source thermal evaporation method, whereas the organic layers are processed from solution. The dual-source thermal evaporation method leads to smooth films and allows for high precision thickness variations. Devices were prepared with perovskite layer thicknesses ranging frommore » 160 to 900 nm. The short-circuit current observed for these devices increased with increasing perovskite layer thickness. The main parameter that decreases with increasing perovskite layer thickness is the fill factor and as a result optimum device performance is obtained for perovskite layer thickness around 300 nm. However, here we demonstrate that with a slightly oxidized electron blocking layer the fill factor for the solar cells with a perovskite layer thickness of 900 nm increases to the same values as for the devices with thin perovskite layers. As a result the power conversion efficiencies for the cells with 300 and 900 nm are very similar, 12.7% and 12%, respectively.« less

Efficient barrier for charge injection in polyethylene by silver nanoparticles/plasma polymer stack

DOE Office of Scientific and Technical Information (OSTI.GOV)

Milliere, L.; Makasheva, K., E-mail: kremena.makasheva@laplace.univ-tlse.fr; Laurent, C.

2014-09-22

Charge injection from a metal/insulator contact is a process promoting the formation of space charge in polymeric insulation largely used in thick layers in high voltage equipment. The internal charge perturbs the field distribution and can lead to catastrophic failure either through its electrostatic effects or through energetic processes initiated under charge recombination and/or hot electrons effects. Injection is still ill-described in polymeric insulation due to the complexity of the contact between the polymer chains and the electrodes. Barrier heights derived from the metal work function and the polymer electronic affinity do not provide a good description of the measurementsmore » [Taleb et al., IEEE Trans. Dielectr. Electr. Insul. 20, 311–320 (2013)]. Considering the difficulty to describe the contact properties and the need to prevent charge injection in polymers for high voltage applications, we developed an alternative approach by tailoring the interface properties by the silver nanoparticles (AgNPs)/plasma polymer stack, deposited on the polymer film. Due to their small size, the AgNPs, covered by a very thin film of plasma polymer, act as deep traps for the injected charges thereby stabilizing the interface from the point of view of charge injection. After a quick description of the method for elaborating the nanostructured layer near the contact, it is demonstrated how the AgNPs/plasma polymer stack effectively prevents, in a spectacular way, the formation of bulk space charge.« less

Thermal barrier coating life-prediction model development. Annual report no. 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strangman, T. E.; Neumann, J.; Liu, A.

1986-10-01

The program focuses on predicting the lives of two types of strain-tolerant and oxidation-resistant thermal barrier coating (TBC) systems that are produced by commercial coating suppliers to the gas turbine industry. The plasma-sprayed TBC system, composed of a low-pressure plasma-spray (LPPS) or an argon shrouded plasma-spray (ASPS) applied oxidation resistant NiCrAlY or (CoNiCrAlY) bond coating and an air-plasma-sprayed yttria partially stabilized zirconia insulative layer, is applied by both Chromalloy, Klock, and Union Carbide. The second type of TBS is applied by the electron beam-physical vapor deposition (EB-PVD) process by Temescal. The second year of the program was focused on specimenmore » procurement, TMC system characterization, nondestructive evaluation methods, life prediction model development, and TFE731 engine testing of thermal barrier coated blades. Materials testing is approaching completion. Thermomechanical characterization of the TBC systems, with toughness, and spalling strain tests, was completed. Thermochemical testing is approximately two-thirds complete. Preliminary materials life models for the bond coating oxidation and zirconia sintering failure modes were developed. Integration of these life models with airfoil component analysis methods is in progress. Testing of high pressure turbine blades coated with the program TBS systems is in progress in a TFE731 turbofan engine. Eddy current technology feasibility was established with respect to nondestructively measuring zirconia layer thickness of a TBC system.« less

Effect of capping layer on spin-orbit torques

NASA Astrophysics Data System (ADS)

Sun, Chi; Siu, Zhuo Bin; Tan, Seng Ghee; Yang, Hyunsoo; Jalil, Mansoor B. A.

2018-04-01

In order to enhance the magnitude of spin-orbit torque (SOT), considerable experimental works have been devoted to studying the thickness dependence of the different layers in multilayers consisting of heavy metal (HM), ferromagnet (FM), and capping layers. Here, we present a theoretical model based on the spin-drift-diffusion formalism to investigate the effect of the capping layer properties such as its thickness on the SOT observed in experiments. It is found that the spin Hall-induced SOT can be significantly enhanced by incorporating a capping layer with an opposite spin Hall angle to that of the HM layer. The spin Hall torque can be maximized by tuning the capping layer thickness. However, in the absence of the spin Hall effect (SHE) in the capping layer, the torque decreases monotonically with the capping layer thickness. Conversely, the spin Hall torque is found to decrease monotonically with the FM layer thickness, irrespective of the presence or absence of the SHE in the capping layer. All these trends are in correspondence with experimental observations. Finally, our model suggests that capping layers with a long spin diffusion length and high resistivity would also enhance the spin Hall torque.

Nanoporous Al sandwich foils using size effect of Al layer thickness during Cu/Al/Cu laminate rolling

NASA Astrophysics Data System (ADS)

Yu, Hailiang; Lu, Cheng; Tieu, A. Kiet; Li, Huijun; Godbole, Ajit; Kong, Charlie

2018-06-01

The roll bonding technique is one of the most widely used methods to produce metal laminate sheets. Such sheets offer interesting research opportunities for both scientists and engineers. In this paper, we report on an experimental investigation of the 'thickness effect' during laminate rolling for the first time. Using a four-high multifunction rolling mill, Cu/Al/Cu laminate sheets were fabricated with a range of thicknesses (16, 40, 70 and 130 μm) of the Al layer. The thickness of the Cu sheets was a constant 300 μm. After rolling, TEM images show good bonding quality between the Cu and Al layers. However, there are many nanoscale pores in the Al layer. The fraction of nanoscale pores in the Al layer increases with a reduction in the Al layer thickness. The finite element method was used to simulate the Cu/Al/Cu rolling process. The simulation results reveal the effect of the Al layer thickness on the deformation characteristics of the Cu/Al/Cu laminate. Finally, we propose that the size effect of the Al layer thickness during Cu/Al/Cu laminate rolling may offer a method to fabricate 'nanoporous' Al sandwich laminate foils. Such foils can be used in electromagnetic shielding of electrical devices and noisy shielding of building.

Cavitation Erosion of Cermet-Coated Aluminium Bronzes.

PubMed

Mitelea, Ion; Oancă, Octavian; Bordeaşu, Ilare; Crăciunescu, Corneliu M

2016-03-17

The cavitation erosion resistance of CuAl10Ni5Fe2.5Mn1 following plasma spraying with Al₂O₃·30(Ni 20 Al) powder and laser re-melting was analyzed in view of possible improvements of the lifetime of components used in hydraulic environments. The cavitation erosion resistance was substantially improved compared with the one of the base material. The thickness of the re-melted layer was in the range of several hundred micrometers, with a surface microhardness increasing from 250 to 420 HV 0.2. Compositional, structural, and microstructural explorations showed that the microstructure of the re-melted and homogenized layer, consisting of a cubic Al₂O₃ matrix with dispersed Ni-based solid solution is associated with the hardness increase and consequently with the improvement of the cavitation erosion resistance.

Initiated chemical vapor deposition polymers for high peak-power laser targets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baxamusa, Salmaan H.; Lepro, Xavier; Lee, Tom

2016-12-05

Here, we report two examples of initiated chemical vapor deposition (iCVD) polymers being developed for use in laser targets for high peak-power laser systems. First, we show that iCVD poly(divinylbenzene) is more photo-oxidatively stable than the plasma polymers currently used in laser targets. Thick layers (10–12 μm) of this highly crosslinked polymer can be deposited with near-zero intrinsic film stress. Second, we show that iCVD epoxy polymers can be crosslinked after deposition to form thin adhesive layers for assembling precision laser targets. The bondlines can be made as thin as ~ 1 μm, approximately a factor of 2 thinner thanmore » achievable using viscous resin-based adhesives. These bonds can withstand downstream coining and stamping processes.« less

Substantial difference in target surface chemistry between reactive dc and high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

2018-02-01

The nitride layer formed in the target race track during the deposition of stoichiometric TiN thin films is a factor 2.5 thicker for high power impulse magnetron sputtering (HIPIMS), compared to conventional dc processing (DCMS). The phenomenon is explained using x-ray photoelectron spectroscopy analysis of the as-operated Ti target surface chemistry supported by sputter depth profiles, dynamic Monte Carlo simulations employing the TRIDYN code, and plasma chemical investigations by ion mass spectrometry. The target chemistry and the thickness of the nitride layer are found to be determined by the implantation of nitrogen ions, predominantly N+ and N2+ for HIPIMS and DCMS, respectively. Knowledge of this method-inherent difference enables robust processing of high quality functional coatings.

Thickness optimization of the ZnO based TCO layer in a CZTSSe solar cell. Evolution of its performance with thickness when external temperature changes.

NASA Astrophysics Data System (ADS)

Chadel, Meriem; Moustafa Bouzaki, Mohammed; Chadel, Asma; Aillerie, Michel; Benyoucef, Boumediene

2017-07-01

The influence of the thickness of a Zinc Oxide (ZnO) transparent conductive oxide (TCO) layer on the performance of the CZTSSe solar cell is shown in detail. In a photovoltaic cell, the thickness of each layer largely influence the performance of the solar cell and optimization of each layer constitutes a complete work. Here, using the Solar Cell Capacitance Simulation (SCAPS) software, we present simulation results obtained in the analyze of the influence of the TCO layer thickness on the performance of a CZTSSe solar cell, starting from performance of a CZTSSe solar cell commercialized in 2014 with an initial efficiency equal to 12.6%. In simulation, the temperature was considered as a functioning parameter and the evolution of tthe performance of the cell for various thickness of the TCO layer when the external temperature changes is simulated and discussed. The best efficiency of the solar cell based in CZTSSe is obtained with a ZnO thickness equal to 50 nm and low temperature. Based on the considered marketed cell, we show a technological possible increase of the global efficiency achieving 13% by optimization of ZnO based TCO layer.

Study of Electron-scale Dissipation near the X-line During Magnetic Reconnection in a Laboratory Plasma

NASA Astrophysics Data System (ADS)

Ji, H.; Yoo, J.; Dorfman, S. E.; Jara-Almonte, J.; Yamada, M.; Swanson, C.; Daughton, W. S.; Roytershteyn, V.; Kuwahata, A.; Ii, T.; Inomoto, M.; Ono, Y.; von Stechow, A.; Grulke, O.; Phan, T.; Mozer, F.; Bale, S. D.

2013-12-01

Despite its disruptive influences on the large-scale structures of space and solar plasmas, the crucial topological changes and associated dissipation during magnetic reconnection take place only near an X-line within thin singular layers. In the modern collisionless models where electrons and ions are allowed to move separately, it has been predicted that ions exhaust efficiently through a thicker, ion-scale dissipative layer while mobile electrons can evacuate through a thinner, electron-scale dissipation layer, allowing for efficient release of magnetic energy. While ion dissipation layers have been frequently detected, the existence of election layers near the X-line and the associated dissipation structures and mechanisms are still an open question, and will be a main subject of the coming MMS mission. In this presentation, we will summarize our efforts in the past a few years to study electron-scale dissipation in a well-controlled and well-diagnosed reconnecting current sheet in a laboratory plasma, with close comparisons with the state-of-the-art, 2D and 3D fully kinetic simulations. Key results include: (1) positive identification of electromagnetic waves detected at the current sheet center as long wave-length, lower-hybrid drift instabilities (EM-LHDI), (2) however, there is strong evidence that this EM-LHDI cannot provide the required force to support the reconnection electric field, (3) detection of 3D flux-rope-like magnetic structures during impulsive reconnection events, and (4) electrons are heated through non-classical mechanisms near the X-line with a small but clear temperature anisotropy. These results, unfortunately, do not resolve the outstanding discrepancies on electron layer thickness between best available experiments and fully kinetic simulations. To make further progress, we are continuously pushing in the both experimental and numerical frontiers. Experimentally, we started investigations on EM-LHDI and electron heating as a function of guide field strength and symmetry of reconnection geometry, with new attempts to measure non-thermal electrons and higher frequency fluctuations. Numerically, we started investigations of kinetic simulations at realistic ratios of electron plasma frequency to cyclotron frequency, and also at realistic ratios of ion mass to electron mass. The most updated results of these new projects will be presented with discussions on the relevance to space observations.

Exploring high temperature phenomena related to post-detonation using an electric arc

NASA Astrophysics Data System (ADS)

Dai, Z. R.; Crowhurst, J. C.; Grant, C. D.; Knight, K. B.; Tang, V.; Chernov, A. A.; Cook, E. G.; Lotscher, J. P.; Hutcheon, I. D.

2013-11-01

We report a study of materials recovered from a uranium-containing plasma generated by an electric arc. The device used to generate the arc is capable of sustaining temperatures of an eV or higher for up to 100 μs. Samples took the form of a 4 μm-thick U238 film deposited onto 8 pairs of 17 μm-thick Cu electrodes supported on a 25 μm-thick Kapton backing and sandwiched between glass plates. Materials recovered from the glass plates and around the electrode tips after passage of an arc were characterized using scanning and transmission electron microscopy. Recovered materials included a variety of crystalline compounds (e.g., UO2, UC2, UCu5,) as well as mixtures of uranium and amorphous glass. Most of the materials collected on the glass plates took the form of spherules having a wide range of diameters from tens of nanometers to tens of micrometers. The composition and size of the spherules depended on location, indicating different chemical and physical environments. A theoretical analysis we have carried out suggests that the submicron spherules presumably formed by deposition during the arc discharge, while at the same time the glass plates were strongly heated due to absorption of plasma radiation mainly by islands of deposited metals (Cu, U). The surface temperature of the glass plates is expected to have risen to ˜2300 K thus producing a liquefied glass layer, likely diffusions of the deposited metals on the hot glass surface and into this layer were accompanied by chemical reactions that gave rise to the observed materials. These results, together with the compact scale and relatively low cost, suggest that the experimental technique provides a practical approach to investigate the complex physical and chemical processes that occur when actinide-containing material interacts with the environment at high temperature, for example, during fallout formation following a nuclear detonation.

Simulations of a beam-driven plasma antenna in the regime of plasma transparency

NASA Astrophysics Data System (ADS)

Timofeev, I. V.; Berendeev, E. A.; Dudnikova, G. I.

2017-09-01

In this paper, the theoretically predicted possibility to increase the efficiency of electromagnetic radiation generated by a thin beam-plasma system in the regime of oblique emission, when a plasma column becomes transparent to radiation near the plasma frequency, is investigated using particle-in-cell simulations. If a finite-size plasma column has a longitudinal density modulation, such a system is able to radiate electromagnetic waves as a dipole antenna. This radiation mechanism is based on the conversion of an electron beam-driven potential plasma wave on the periodic perturbation of plasma density. In this case, the frequency of radiated waves appears to be slightly lower than the plasma frequency. That is why their fields enable the penetration into the plasma only to the skin-depth. This case is realized when the period of density modulation coincides with the wavelength of the most unstable beam-driven mode, and the produced radiation escapes from the plasma in the purely transverse direction. In the recent theoretical paper [I. V. Timofeev et al. Phys. Plasmas 23, 083119 (2016)], however, it has been found that the magnetized plasma can be transparent to this radiation at certain emission angles. It means that the beam-to-radiation power conversion can be highly efficient even in a relatively thick plasma since not only boundary layers but also the whole plasma volume can be involved in the generation of electromagnetic waves. Simulations of steady-state beam injection into a pre-modulated plasma channel confirm the existence of this effect and show limits of validity for the simplified theoretical model.

Recombination zone in white organic light emitting diodes with blue and orange emitting layers

NASA Astrophysics Data System (ADS)

Tsuboi, Taiju; Kishimoto, Tadashi; Wako, Kazuhiro; Matsuda, Kuniharu; Iguchi, Hirofumi

2012-10-01

White fluorescent OLED devices with a 10 nm thick blue-emitting layer and a 31 nm thick orange-emitting layer have been fabricated, where the blue-emitting layer is stacked on a hole transport layer. An interlayer was inserted between the two emitting layers. The thickness of the interlayer was changed among 0.3, 0.4, and 1.0 nm. White emission with CIE coordinates close to (0.33, 0.33) was observed from all the OLEDs. OLED with 0.3 nm thick interlayer gives the highest maximum luminous efficiency (11 cd/A), power efficiency (9 lm/W), and external quantum efficiency (5.02%). The external quantum efficiency becomes low with increasing the interlayer thickness from 0 nm to 1.0 nm. When the location of the blue- and orange-emitting layers is reversed, white emission was not obtained because of too weak blue emission. It is suggested that the electron-hole recombination zone decreases nearly exponentially with a distance from the hole transport layer.

Changes in Inner and Outer Retinal Layer Thicknesses after Vitrectomy for Idiopathic Macular Hole: Implications for Visual Prognosis

PubMed Central

Hashimoto, Yuki; Saito, Wataru; Fujiya, Akio; Yoshizawa, Chikako; Hirooka, Kiriko; Mori, Shohei; Noda, Kousuke; Ishida, Susumu

2015-01-01

Purpose To investigate sequential post-operative thickness changes in inner and outer retinal layers in eyes with an idiopathic macular hole (MH). Methods Retrospective case series. Twenty-four eyes of 23 patients who had received pars plana vitrectomy (PPV) for the closure of MH were included in the study. Spectral domain optical coherence tomography C-scan was used to automatically measure the mean thickness of the inner and outer retinal layers pre-operatively and up to 6 months following surgery. The photoreceptor outer segment (PROS) length was measured manually and was used to assess its relationship with best-corrected visual acuity (BCVA). Results Compared with the pre-operative thickness, the inner layers significantly thinned during follow-up (P = 0.02), particularly in the parafoveal (P = 0.01), but not perifoveal, area. The post-operative inner layer thinning ranged from the ganglion cell layer to the inner plexiform layer (P = 0.002), whereas the nerve fiber layer was unaltered. Outer layer thickness was significantly greater post-operatively (P = 0.002), and especially the PROS lengthened not only in the fovea but also in the parafovea (P < 0.001). Six months after surgery, BCVA was significantly correlated exclusively with the elongated foveal PROS (R = 0.42, P = 0.03), but not with any of the other thickness parameters examined. Conclusions Following PPV for MH, retinal inner layers other than the nerve fiber layer thinned, suggestive of subclinical thickening in the inner layers where no cyst was evident pre-operatively. In contrast, retinal outer layer thickness significantly increased, potentially as a result of PROS elongation linking tightly with favorable visual prognosis in MH eyes. PMID:26291526

Normative values for optical coherence tomography parameters in healthy children and interexaminer agreement for choroidal thickness measurements.

PubMed

Turan, Kadriye Erkan; Sekeroglu, Hande Taylan; Baytaroglu, Ata; Bezci, Figen; Karahan, Sevilay

2018-01-01

To (a) determine the normative values for optical coherence tomography (OCT) parameters such as central macular thickness, retinal nerve fiber layer thickness, and choroidal thickness in healthy children; (b) investigate the relationships of these parameters with axial length, central corneal thickness, refractive errors, and intraocular pressure; and (c) determine interexaminer agreement for choroidal thickness measurements. In this cross-sectional study, 120 healthy children aged 8-15 years underwent detailed ophthalmological examination and OCT measurements. Choroidal thickness was measured at three separate locations by two independent examiners. The mean global retinal nerve fiber layer thickness was 98.75 ± 9.45 μm (79.0-121.0). The mean central macular thickness was 232.29 ± 29.37 μm (190.0-376.0). The mean subfoveal choroidal thickness obtained by examiner 1 was 344.38 ± 68.83 μm and that obtained by examiner 2 was 344.04 ± 68.92 μm. Interexaminer agreement was between 99.6%-99.8% for choroidal thickness at three separate locations. Central macular thickness increased with axial length (r=0.245, p=0.007). Choroidal thickness increased with age (r=0.291, p=0.001) and decreased with axial length (r=-0.191, p=0.037). Global retinal nerve fiber layer thickness decreased with axial length (r=-0.247, p=0.007) and increased with central corneal thickness (r=0.208, p=0.022). Global retinal nerve fiber layer thickness positively correlated with choroidal thickness (r=0.354, p<0.001). Global retinal nerve fiber layer thickness (r=0.223, p=0.014) and choroidal thickness (r=0.272, p=0.003) increased with the spherical equivalent (D). Optical coherence tomography parameters showed a wide range of variability in children. Retinal nerve fiber layer thickness, central macular thickness, and choroidal thickness were found to be either inter-related or correlated with age, central corneal thickness, axial length, and refractive errors. Furthermore, manual measurements of choroidal thickness showed high interexaminer agreement. Because normative values for optical coherence tomography parameters differed in children, the measurements should be interpreted according to an age-appropriate database.

Realization of high heat flux tungsten monoblock type target with graded interlayer for application to DEMO divertor

NASA Astrophysics Data System (ADS)

Richou, M.; Gallay, F.; Böswirth, B.; Chu, I.; Lenci, M.; Loewenhoff, Th; Quet, A.; Greuner, H.; Kermouche, G.; Meillot, E.; Pintsuk, G.; Visca, E.; You, J. H.

2017-12-01

The divertor is the key in-vessel plasma-facing component being in charge of power exhaust and removal of impurity particles. In DEMO, divertor targets must survive an environment of high heat fluxes (˜up to 20 MW m-2 during slow transients) and neutron irradiation. One advanced concept for components in monoblock configuration concerns the insertion of a compositionally graded layer between tungsten and CuCrZr instead of the soft copper interlayer. As a first step, a thin graded layer (˜25 μm) was developed. As a second step, a thicker graded layer (˜500 μm), which is actually being developed, will also be inserted to study the compliant role of a macroscopic graded layer. This paper reports the results of cyclic high heat flux loading tests up to 20 MW m-2 and to heat flux higher than 25 MW m-2 that mock-ups equipped with thin graded layer survived without visible damage. First feedback on manufacturing steps is also presented. Moreover, the first results obtained on the development of the thick graded layer and its integration in a monoblock configuration are shown.

Microstructural Characteristics of Plasma Nitrided Layer on Hot-Rolled 304 Stainless Steel with a Small Amount of α-Ferrite

NASA Astrophysics Data System (ADS)

Xu, Xiaolei; Yu, Zhiwei; Cui, Liying; Niu, Xinjun; Cai, Tao

2016-02-01

The hot-rolled 304 stainless steel with γ-austenite and approximately 5 pct α-ferrite elongated along the rolling direction was plasma-nitrided at a low temperature of 693 K (420 °C). X-ray diffraction results revealed that the nitrided layer was mainly composed of the supersaturated solid solution of nitrogen in austenite ( γ N). Transmission electron microscopy (TEM) observations showed that the microstructure of the γ N phase exhibited "fracture factor contrast" reflective of the occurrence of fine pre-precipitations in γ N by the continuous precipitation. The occurrence of a diffuse scattering effect on the electron diffraction spots of γ N indicated that the pre-precipitation took place in γ N in the form of strongly bonded Cr-N clusters or pairs due to a strong attractive interaction of nitrogen with chromium. Scanning electron microscopy and TEM observations indicated that the discontinuous precipitation initiated from the γ/ α interfaces and grew from the austenite boundaries into austenite grains to form a lamellar structure consisting of CrN and ferrite. The orientation relationship between CrN and ferrite corresponded to a Baker-Nutting relationship: (100)CrN//(100) α ; [011]CrN//[001] α . A zigzag boundary line following the banded structure of alternating γ-austenite and elongated α-ferrite was presented between the nitrided layer and the substrate to form a continuous varying layer thickness, which resulted from the difference in diffusivities of nitrogen in α-ferrite and γ-austenite, along the γ/ α interfaces and through the lattice. Microstructural features similar to the γ N were also revealed in the ferrite of the nitrided layer by TEM. It was not excluded that a supersaturated solid solution of nitrogen in ferrite ( α N) formed in the nitrided layer.

Choroidal Haller's and Sattler's Layers Thickness in Normal Indian Eyes.

PubMed

Roy, Rupak; Saurabh, Kumar; Vyas, Chinmayi; Deshmukh, Kaustubh; Sharma, Preeti; Chandrasekharan, Dhileesh P; Bansal, Aditya

2018-01-01

This study aims to study normative choroidal thickness (CT) and Haller's and Sattler's layers thickness in normal Indian eyes. The choroidal imaging of 73 eyes of 43 healthy Indian individuals was done using enhanced depth imaging feature of spectralis optical coherence tomography. Rraster scan protocol centered at fovea was used for imaging separately by two observers. CT was defined as the length of the perpendicular line drown from the outer border of hypereflective RPE-Bruch's complex to inner margin of choroidoscleral junction. Choroidal vessel layer thickness was measured after defining a largest choroidal vessel lumen within 750 μ on either side of the subfoveal CT vector. A perpendicular line was drawn to the innermost border of this lumen, and the distance between the perpendicular line and innermost border of choroidoscleral junction gave large choroidal vessel layer thickness (LCVLT, Haller's layer). Medium choroidal vessel layer thickness (MCVLT, Sattler's layer) was measured as the distance between same perpendicular line and outer border of hypereflective RPE-Bruch's complex. The mean age of individuals was 28.23 ± 15.29 years (range 14-59 years). Overall, the mean subfoveal CT was 331.6 ± 63.9 μ. Mean LCVLT was 227.08 ± 51.24 μ and the mean MCVLT was 95.65 ± 23.62 μ. CT was maximum subfoveally with gradual reduction in the thickness as the distance from the fovea increased. This is the first study describing the choroidal sublayer thickness, i.e., Haller's and Sattler's layer thickness along with CT in healthy Indian population.

Choroidal Haller's and Sattler's Layers Thickness in Normal Indian Eyes

PubMed Central

Roy, Rupak; Saurabh, Kumar; Vyas, Chinmayi; Deshmukh, Kaustubh; Sharma, Preeti; Chandrasekharan, Dhileesh P.; Bansal, Aditya

2018-01-01

AIM: This study aims to study normative choroidal thickness (CT) and Haller's and Sattler's layers thickness in normal Indian eyes. MATERIALS AND METHODS: The choroidal imaging of 73 eyes of 43 healthy Indian individuals was done using enhanced depth imaging feature of spectralis optical coherence tomography. Rraster scan protocol centered at fovea was used for imaging separately by two observers. CT was defined as the length of the perpendicular line drown from the outer border of hypereflective RPE-Bruch's complex to inner margin of choroidoscleral junction. Choroidal vessel layer thickness was measured after defining a largest choroidal vessel lumen within 750 μ on either side of the subfoveal CT vector. A perpendicular line was drawn to the innermost border of this lumen, and the distance between the perpendicular line and innermost border of choroidoscleral junction gave large choroidal vessel layer thickness (LCVLT, Haller's layer). Medium choroidal vessel layer thickness (MCVLT, Sattler's layer) was measured as the distance between same perpendicular line and outer border of hypereflective RPE-Bruch's complex. RESULTS: The mean age of individuals was 28.23 ± 15.29 years (range 14–59 years). Overall, the mean subfoveal CT was 331.6 ± 63.9 μ. Mean LCVLT was 227.08 ± 51.24 μ and the mean MCVLT was 95.65 ± 23.62 μ. CT was maximum subfoveally with gradual reduction in the thickness as the distance from the fovea increased. CONCLUSION: This is the first study describing the choroidal sublayer thickness, i.e., Haller's and Sattler's layer thickness along with CT in healthy Indian population. PMID:29899646

Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sutter, P., E-mail: psutter@bnl.gov; Sutter, E.

2014-09-01

We assess scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) for thickness measurements on few-layer hexagonal boron nitride (h-BN), the layered dielectric of choice for integration with graphene and other two-dimensional materials. Observations on h-BN islands with large, atomically flat terraces show that the secondary electron intensity in SEM reflects monolayer height changes in films up to least 10 atomic layers thickness. From a quantitative analysis of AES data, the energy-dependent electron escape depth in h-BN films is deduced. The results show that AES is suitable for absolute thickness measurements of few-layer h-BN of 1 to 6 layers.

Flow characteristics and scaling past highly porous wall-mounted fences

NASA Astrophysics Data System (ADS)

Rodríguez-López, Eduardo; Bruce, Paul J. K.; Buxton, Oliver R. H.

2017-07-01

An extensive characterization of the flow past wall-mounted highly porous fences based on single- and multi-scale geometries has been performed using hot-wire anemometry in a low-speed wind tunnel. Whilst drag properties (estimated from the time-averaged momentum equation) seem to be mostly dependent on the grids' blockage ratio; wakes of different size and orientation bars seem to generate distinct behaviours regarding turbulence properties. Far from the near-grid region, the flow is dominated by the presence of two well-differentiated layers: one close to the wall dominated by the near-wall behaviour and another one corresponding to the grid's wake and shear layer, originating from between this and the freestream. It is proposed that the effective thickness of the wall layer can be inferred from the wall-normal profile of root-mean-square streamwise velocity or, alternatively, from the wall-normal profile of streamwise velocity correlation. Using these definitions of wall-layer thickness enables us to collapse different trends of the turbulence behaviour inside this layer. In particular, the root-mean-square level of the wall shear stress fluctuations, longitudinal integral length scale, and spanwise turbulent structure is shown to display a satisfactory scaling with this thickness rather than with the whole thickness of the grid's wake. Moreover, it is shown that certain grids destroy the spanwise arrangement of large turbulence structures in the logarithmic region, which are then re-formed after a particular streamwise extent. It is finally shown that for fences subject to a boundary layer of thickness comparable to their height, the effective thickness of the wall layer scales with the incoming boundary layer thickness. Analogously, it is hypothesized that the growth rate of the internal layer is also partly dependent on the incoming boundary layer thickness.

Effect upon biocompatibility and biocorrosion properties of plasma electrolytic oxidation in trisodium phosphate electrolytes.

PubMed

Kim, Yu-Kyoung; Park, Il-Song; Lee, Kwang-Bok; Bae, Tae-Sung; Jang, Yong-Seok; Oh, Young-Min; Lee, Min-Ho

2016-03-01

Surface modification to improve the corrosion resistance and biocompatibility of the Mg-Al-Zn-Ca alloy was conducted via plasma electrolytic oxidation (PEO) in an electrolyte that included phosphate. Calcium phosphate can be easily induced on the surface of a PEO coating that includes phosphate in a physiological environment because Ca(2+) ions in body fluids can be combined with PO4 (3-). Cytotoxicity of the PEO coating formed in electrolytes with various amounts of Na3PO4 was identified. In particular, the effects that PEO films have upon oxidative stress and differentiation of osteoblast activity were studied. As the concentration of Na3PO4 in the electrolyte increased, the oxide layer was found to become thicker, which increased corrosion resistance. However, the PEO coating formed in electrolytes with over 0.2 M of added Na3PO4 exhibited more microcracks and larger pores than those formed in smaller Na3PO4 concentrations owing to a large spark discharge. A nonuniform oxide film that included more phosphate caused more cytotoxicity and oxidative stress, and overabundant phosphate content in the oxide layer interrupted the differentiation of osteoblasts. The corrosion resistance of the magnesium alloy and the thickness of the oxide layer were increased by the addition of Na3PO4 in the electrolyte for PEO treatment. However, excessive phosphate content in the oxide layer led to oxidative stress, which resulted in reduced cell viability and activity.

Molecular dynamic simulation study of plasma etching L10 FePt media in embedded mask patterning (EMP) process

NASA Astrophysics Data System (ADS)

Zhu, Jianxin; Quarterman, P.; Wang, Jian-Ping

2017-05-01

Plasma etching process of single-crystal L10-FePt media [H. Wang et al., Appl. Phys. Lett. 102(5) (2013)] is studied using molecular dynamic simulation. Embedded-Atom Method [M. S. Daw and M. I. Baskes, Phy. Rev. B 29, 6443 (1984); X. W. Zhou, R. A. Johnson and H. N. G. Wadley, Phy. Rev. B 69, 144113 (2004)] is used to calculate the interatomic potential within atoms in FePt alloy, and ZBL potential [J.F. Ziegler, J. P. Biersack and U. Littmark, "The Stopping and Range of Ions in Matter," Volume 1, Pergamon,1985] in comparison with conventional Lennard-Jones "12-6" potential is applied to interactions between etching gas ions and metal atoms. It is shown the post-etch structure defects can include amorphized surface layer and lattice interstitial point defects that caused by etchant ions passed through the surface layer. We show that the amorphized or damaged FePt lattice surface layer (or "magnetic dead-layer") thickness after etching increases with ion energy for Ar ion impacts, but significantly small for He ions at up to 250eV ion energy. However, we showed that He sputtering creates more interstitial defects at lower energy levels and defects are deeper below the surface compared to Ar sputtering. We also calculate the interstitial defect level and depth as dependence on ion energy for both Ar and He ions. Media magnetic property loss due to these defects is also discussed.

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

2017-05-01

In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10-3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition.

PubMed

Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

2017-12-01

In situ-formed SiO 2 was introduced into HfO 2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO 2 /SiO 2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO 2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO 2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10 -3 A/cm 2 at gate bias of V fb  + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO 2 /SiO 2 /Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO 2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

Retinal nerve fiber layer thickness and neuropsychiatric manifestations in systemic lupus erythematosus.

PubMed

Shulman, S; Shorer, R; Wollman, J; Dotan, G; Paran, D

2017-11-01

Background Cognitive impairment is frequent in systemic lupus erythematosus. Atrophy of the corpus callosum and hippocampus have been reported in patients with systemic lupus erythematosus, and diffusion tensor imaging studies have shown impaired white matter integrity, suggesting that white matter damage in systemic lupus erythematosus may underlie the cognitive impairment as well as other neuropsychiatric systemic lupus erythematosus manifestations. Retinal nerve fiber layer thickness, as assessed by optical coherence tomography, has been suggested as a biomarker for white matter damage in neurologic disorders such as multiple sclerosis, Alzheimer's disease and Parkinson's disease. Retinal nerve fiber layer thinning may occur early, even in patients with mild clinical symptoms. Aim The objective of this study was to assess the association of retinal nerve fiber layer thickness, as a biomarker of white matter damage in systemic lupus erythematosus patients, with neuropsychiatric systemic lupus erythematosus manifestations, including cognitive impairment. Methods Twenty-one consecutive patients with systemic lupus erythematosus underwent neuropsychological testing using a validated computerized battery of tests as well as the Rey-Auditory verbal learning test. All 21 patients, as well as 11 healthy, age matched controls, underwent optical coherence tomography testing to assess retinal nerve fiber layer thickness. Correlations between retinal nerve fiber layer thickness and results in eight cognitive domains assessed by the computerized battery of tests as well as the Rey-Auditory verbal learning test were assessed in patients with systemic lupus erythematosus, with and without neuropsychiatric systemic lupus erythematosus, and compared to retinal nerve fiber layer thickness in healthy controls. Results No statistically significant correlation was found between retinal nerve fiber layer thickness in patients with systemic lupus erythematosus as compared to healthy controls. When evaluating by subgroups, no correlation was found between patients with or without neuropsychiatric systemic lupus erythematosus or cognitive impairment and retinal nerve fiber layer thickness. Conclusion Retinal nerve fiber layer thickness of systemic lupus erythematosus patients was not found to be statistically different compared to controls. Within systemic lupus erythematosus patients there was no correlation between retinal nerve fiber layer thickness and cognitive impairment or other neuropsychiatric systemic lupus erythematosus manifestations.

Measurement and modeling of surface temperature dynamics of the NSTX liquid lithium divertor

NASA Astrophysics Data System (ADS)

McLean, A. G.; Gan, K. F.; Ahn, J.-W.; Gray, T. K.; Maingi, R.; Abrams, T.; Jaworski, M. A.; Kaita, R.; Kugel, H. W.; Nygren, R. E.; Skinner, C. H.; Soukhanovskii, V. A.

2013-07-01

Dual-band infrared (IR) measurements of the National Spherical Torus eXperiment (NSTX) Liquid Lithium Divertor (LLD) are reported that demonstrate liquid Li is more effective at removing plasma heat flux than Li-conditioned graphite. Extended dwell of the outer strike point (OSP) on the LLD caused an incrementally larger area to be heated above the Li melting point through the discharge leading to enhanced D retention and plasma confinement. Measurement of Tsurface near the OSP demonstrates a significant reduction of the LLD surface temperature compared to that of Li-coated graphite at the same major radius. Modeling of these data with a 2-D simulation of the LLD structure in the DFLUX code suggests that the structure of the LLD was successful at handling up to q⊥,peak = 5 MW/m2 inter-ELM and up to 10 MW/m2 during ELMs from its plasma-facing surface as intended, and provide an innovative method for inferring the Li layer thickness.

Correlation between skin, bone, and cerebrospinal fluid layer thickness and optical coefficients measured by multidistance frequency-domain near-infrared spectroscopy in term and preterm infants.

PubMed

Demel, Anja; Feilke, Katharina; Wolf, Martin; Poets, Christian F; Franz, Axel R

2014-01-01

Near-infrared spectroscopy (NIRS) is increasingly used in neonatal intensive care. We investigated the impact of skin, bone, and cerebrospinal fluid (CSF) layer thickness in term and preterm infants on absorption-(μa) and/or reduced scattering coefficients (μs') measured by multidistance frequency-domain (FD)-NIRS. Transcranial ultrasound was performed to measure the layer thicknesses. Correlations were only statistically significant for μa at 692 nm with bone thickness and μs' at 834 nm with skin thickness. There is no evidence that skin, bone, or CSF thickness have an important effect on μa and μs'. Layer thicknesses of skin, bone, and CSF in the range studied do not seem to affect cerebral oxygenation measurements by multidistance FD-NIRS significantly.

What is the copper thin film thickness effect on thermal properties of NiTi/Cu bi-layer?

NASA Astrophysics Data System (ADS)

Fazeli, Sara; Vahedpour, Morteza; Khatiboleslam Sadrnezhaad, Sayed

2017-02-01

Molecular dynamics (MD) simulation was used to study of thermal properties of NiTi/Cu. Embedded atom method (EAM) potentials for describing of inter-atomic interaction and Nose-Hoover thermostat and barostat are employed. The melting of the bi-layers was considered by studying the temperature dependence of the cohesive energy and mean square displacement. To highlight the differences between bi-layers with various copper layer thickness, the effect of copper film thickness on thermal properties containing the cohesive energy, melting point, isobaric heat capacity and latent heat of fusion was estimated. The results show that thermal properties of bi-layer systems are higher than that of their corresponding of pure NiTi. But, these properties of bi-layer systems approximately are independent of copper film thicknesses. The mean square displacement (MSD) results show that, the diffusion coefficients enhance upon increasing of copper film thickness in a linear performance.

Lidar observation of transition of cirrus clouds over a tropical station Gadanki (13.45° N, 79.18° E): case studies

NASA Astrophysics Data System (ADS)

Srinivasan, M. A.; Rao, C. Dhananjaya; Krishnaiah, M.

2016-05-01

The present study describes Mie lidar observations of the cirrus cloud passage showing transition between double thin layers into single thick and single thick layer into double thin layers of cirrus over Gadanki region. During Case1: 17 January 2007, Case4: 12 June 2007, Case5: 14 July 2007 and Case6: 24 July 2007 the transition is found to from two thin cirrus layers into single geometrically thick layer. Case2: 14 May 2007 and Case3: 15 May 2007, the transition is found to from single geometrically thick layer into two thin cirrus layers. Linear Depolarization Ratio (LDR) and Back Scatter Ration (BSR) are found to show similar variation with strong peaks during transition; both LDR and Cloud Optical Depth (COD) is found to show similar variation except during transition with strong peaks in COD which is not clearly found from LDR for the all cases. There is a significant weakening of zonal and meridional winds during Case1 which might be due to the transition from multiple to single thick cirrus indicating potential capability of thick cirrus in modulating the wind fields. There exists strong upward wind dominance contributed to significant ascent in cloud-base altitude thereby causing transition of multiple thin layers into single thick cirrus.

Control of Alq3 wetting layer thickness via substrate surface functionalization.

PubMed

Tsoi, Shufen; Szeto, Bryan; Fleischauer, Michael D; Veinot, Jonathan G C; Brett, Michael J

2007-06-05

The effects of substrate surface energy and vapor deposition rate on the initial growth of porous columnar tris(8-hydroxyquinoline)aluminum (Alq3) nanostructures were investigated. Alq3 nanostructures thermally evaporated onto as-supplied Si substrates bearing an oxide were observed to form a solid wetting layer, likely caused by an interfacial energy mismatch between the substrate and Alq3. Wetting layer thickness control is important for potential optoelectronic applications. A dramatic decrease in wetting layer thickness was achieved by depositing Alq3 onto alkyltrichlorosilane-derivatized Si/oxide substrates. Similar effects were noted with increasing deposition rates. These two effects enable tailoring of the wetting layer thickness.

Electrical transport in transverse direction through silicon carbon alloy multilayers containing regular size silicon quantum dots

NASA Astrophysics Data System (ADS)

Mandal, Aparajita; Kole, Arindam; Dasgupta, Arup; Chaudhuri, Partha

2016-11-01

Electrical transport in the transverse direction has been studied through a series of hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced chemical vapor deposition method. Each SiC-ML consists of 30 cycles of the alternating layers of a nearly amorphous silicon carbide (a-SiC:H) and a microcrystalline silicon carbide (μc-SiC:H) that contains high density of silicon quantum dots (Si-QDs). A detailed investigation by cross sectional TEM reveals preferential growth of densely packed Si-QDs of regular sizes ∼4.8 nm in diameter in a vertically aligned columnar structure within the SiC-ML. More than six orders of magnitude increase in transverse current through the SiC-ML structure were observed for decrease in the a-SiC:H layer thickness from 13 nm to 2 nm. The electrical transport mechanism was established to be a combination of grain boundary or band tail hopping and Frenkel-Poole (F-P) type conduction depending on the temperature and externally applied voltage ranges. Evaluation of trap concentration within the multilayer structures from the fitted room temperature current voltage characteristics by F-P function shows reduction up-to two orders of magnitude indicating an improvement in the short range order in the a-SiC:H matrix for decrease in the thickness of a-SiC:H layer.

Comparison of ionospheric profile parameters with IRI-2012 model over Jicamarca

NASA Astrophysics Data System (ADS)

Bello, S. A.; Abdullah, M.; Hamid, N. S. A.; Reinisch, B. W.

2017-05-01

We used the hourly ionogram data obtained from Jicamarca station (12° S, 76.9° W, dip latitude: 1.0° N) an equatorial region to study the variation of the electron density profile parameters: maximum height of F2-layer (hmF2), bottomside thickness (B0) and shape (B1) parameter of F-layer. The period of study is for the year 2010 (solar minimum period).The diurnal monthly averages of these parameters are compared with the updated IRI-2012 model. The results show that hmF2 is highest during the daytime than nighttime. The variation in hmF2 was observed to modulate the thickness of the bottomside F2-layer. The observed hmF2 and B0 post-sunset peak is as result of the upward drift velocity of ionospheric plasma. We found a close agreement between IRI-CCIR hmF2 model and observed hmF2 during 0000-0700 LT while outside this period the model predictions deviate significantly with the observational values. Significant discrepancies are observed between the IRI model options for B0 and the observed B0 values. Specifically, the modeled values do not show B0 post-sunset peak. A fairly good agreement was observed between the observed B1 and IRI model options (ABT-2009 and Bill 2000) for B1.

New experimental capability to investigate the hypervelocity micrometeoroid bombardment of cryogenic surfaces

NASA Astrophysics Data System (ADS)

Nelson, Andrew Oakleigh; Dee, Richard; Gudipati, Murthy S.; Horányi, Mihály; James, David; Kempf, Sascha; Munsat, Tobin; Sternovsky, Zoltán; Ulibarri, Zach

2016-02-01

Ice is prevalent throughout the solar system and beyond. Though the evolution of many of these icy surfaces is highly dependent on associated micrometeoroid impact phenomena, experimental investigation of these impacts has been extremely limited, especially at the impactor speeds encountered in space. The dust accelerator facility at the Institute for Modeling Plasmas, Atmospheres, and Cosmic Dust (IMPACT) of NASA's Solar System Exploration Research Virtual Institute has developed a novel cryogenic system that will facilitate future study of hypervelocity impacts into ice and icy regolith. The target consists of a copper block, cooled by liquid nitrogen, upon which layers of vapor-deposited ice, pre-frozen ice, or icy regolith can be built in a controlled and quantifiable environment. This ice can be grown from a variety of materials, including H2O, CH3OH, NH3, and slurries containing nanophase iron. Ice temperatures can be varied between 96 K and 150 K and ice thickness greater than 150 nm can be accurately measured. Importantly, the composition of ion plumes created during micrometeoroid impacts onto these icy layers can be measured even in trace amounts by in situ time-of-flight mass spectroscopy. In this paper, we present the fundamental design components of the cryogenic target chamber at IMPACT and proof-of-concept results from target development and from first impacts into thick layers of water ice.

Fabrication Methods for Adaptive Deformable Mirrors

NASA Technical Reports Server (NTRS)

Toda, Risaku; White, Victor E.; Manohara, Harish; Patterson, Keith D.; Yamamoto, Namiko; Gdoutos, Eleftherios; Steeves, John B.; Daraio, Chiara; Pellegrino, Sergio

2013-01-01

Previously, it was difficult to fabricate deformable mirrors made by piezoelectric actuators. This is because numerous actuators need to be precisely assembled to control the surface shape of the mirror. Two approaches have been developed. Both approaches begin by depositing a stack of piezoelectric films and electrodes over a silicon wafer substrate. In the first approach, the silicon wafer is removed initially by plasmabased reactive ion etching (RIE), and non-plasma dry etching with xenon difluoride (XeF2). In the second approach, the actuator film stack is immersed in a liquid such as deionized water. The adhesion between the actuator film stack and the substrate is relatively weak. Simply by seeping liquid between the film and the substrate, the actuator film stack is gently released from the substrate. The deformable mirror contains multiple piezoelectric membrane layers as well as multiple electrode layers (some are patterned and some are unpatterned). At the piezolectric layer, polyvinylidene fluoride (PVDF), or its co-polymer, poly(vinylidene fluoride trifluoroethylene P(VDF-TrFE) is used. The surface of the mirror is coated with a reflective coating. The actuator film stack is fabricated on silicon, or silicon on insulator (SOI) substrate, by repeatedly spin-coating the PVDF or P(VDFTrFE) solution and patterned metal (electrode) deposition. In the first approach, the actuator film stack is prepared on SOI substrate. Then, the thick silicon (typically 500-micron thick and called handle silicon) of the SOI wafer is etched by a deep reactive ion etching process tool (SF6-based plasma etching). This deep RIE stops at the middle SiO2 layer. The middle SiO2 layer is etched by either HF-based wet etching or dry plasma etch. The thin silicon layer (generally called a device layer) of SOI is removed by XeF2 dry etch. This XeF2 etch is very gentle and extremely selective, so the released mirror membrane is not damaged. It is possible to replace SOI with silicon substrate, but this will require tighter DRIE process control as well as generally longer and less efficient XeF2 etch. In the second approach, the actuator film stack is first constructed on a silicon wafer. It helps to use a polyimide intermediate layer such as Kapton because the adhesion between the polyimide and silicon is generally weak. A mirror mount ring is attached by using adhesive. Then, the assembly is partially submerged in liquid water. The water tends to seep between the actuator film stack and silicon substrate. As a result, the actuator membrane can be gently released from the silicon substrate. The actuator membrane is very flat because it is fixed to the mirror mount prior to the release. Deformable mirrors require extremely good surface optical quality. In the technology described here, the deformable mirror is fabricated on pristine substrates such as prime-grade silicon wafers. The deformable mirror is released by selectively removing the substrate. Therefore, the released deformable mirror surface replicates the optical quality of the underlying pristine substrate.

Molecular beam epitaxy of large-area SnSe2 with monolayer thickness fluctuation

NASA Astrophysics Data System (ADS)

Park, Young Woon; Jerng, Sahng-Kyoon; Jeon, Jae Ho; Roy, Sanjib Baran; Akbar, Kamran; Kim, Jeong; Sim, Yumin; Seong, Maeng-Je; Kim, Jung Hwa; Lee, Zonghoon; Kim, Minju; Yi, Yeonjin; Kim, Jinwoo; Noh, Do Young; Chun, Seung-Hyun

2017-03-01

The interest in layered materials is largely based on the expectation that they will be beneficial for a variety of applications, from low-power-consuming, wearable electronics to energy harvesting. However, the properties of layered materials are highly dependent on thickness, and the difficulty of controlling thickness over a large area has been a bottleneck for commercial applications. Here, we report layer-by-layer growth of SnSe2, a layered semiconducting material, via van der Waals epitaxy. The films were fabricated on insulating mica substrates with substrate temperatures in the range of 210 °C-370 °C. The surface consists of a mixture of N and (N ± 1) layers, showing that the thickness of the film can be defined with monolayer accuracy (±0.6 nm). High-resolution transmission electron microscopy reveals a polycrystalline film with a grain size of ˜100 nm and clear Moiré patterns from overlapped grains with similar thickness. We also report field effect mobility values of 3.7 cm2 V-1 s-1 and 6.7 cm2 V-1 s-1 for 11 and 22 nm thick SnSe2, respectively. SnSe2 films with customizable thickness can provide valuable platforms for industry and academic researchers to fully exploit the potential of layered materials.

The effect of chain rigidity on the interfacial layer thickness and dynamics of polymer nanocomposites

NASA Astrophysics Data System (ADS)

Cheng, Shiwang; Carrillo, Jan-Michael Y.; Carroll, Bobby; Sumpter, Bobby G.; Sokolov, Alexei P.

There are growing experimental evidences showing the existence of an interfacial layer that has a finite thickness with slowing down dynamics in polymer nanocomposites (PNCs). Moreover, it is believed that the interfacial layer plays a significant role on various macroscopic properties of PNCs. A thicker interfacial layer is found to have more pronounced effect on the macroscopic properties such as the mechanical enhancement. However, it is not clear what molecular parameter controls the interfacial layer thickness. Inspired by our recent computer simulations that showed the chain rigidity correlated well with the interfacial layer thickness, we performed systematic experimental studies on different polymer nanocomposites by varying the chain stiffness. Combining small-angle X-ray scattering, broadband dielectric spectroscopy and temperature modulated differential scanning calorimetry, we find a good correlation between the polymer Kuhn length and the thickness of the interfacial layer, confirming the earlier computer simulations results. Our findings provide a direct guidance for the design of new PNCs with desired properties.

Electrowetting on plasma-deposited fluorocarbon hydrophobic films for biofluid transport in microfluidics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bayiati, P.; Tserepi, A.; Petrou, P. S.

2007-05-15

The present work focuses on the plasma deposition of fluorocarbon (FC) films on surfaces and the electrostatic control of their wettability (electrowetting). Such films can be employed for actuation of fluid transport in microfluidic devices, when deposited over patterned electrodes. Here, the deposition was performed using C{sub 4}F{sub 8} and the plasma parameters that permit the creation of films with optimized properties desirable for electrowetting were established. The wettability of the plasma-deposited surfaces was characterized by means of contact angle measurements (in the static and dynamic mode). The thickness of the deposited films was probed in situ by means ofmore » spectroscopic ellipsometry, while the surface roughness was provided by atomic force microscopy. These plasma-deposited FC films in combination with silicon nitride, a material of high dielectric constant, were used to create a dielectric structure that requires reduced voltages for successful electrowetting. Electrowetting experiments using protein solutions were conducted on such optimized dielectric structures and were compared with similar structures bearing commercial spin-coated Teflon registered amorphous fluoropolymer (AF) film as the hydrophobic top layer. Our results show that plasma-deposited FC films have desirable electrowetting behavior and minimal protein adsorption, a requirement for successful transport of biological solutions in 'digital' microfluidics.« less

Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma

NASA Astrophysics Data System (ADS)

Minami, Masaki; Tomiya, Shigetaka; Ishikawa, Kenji; Matsumoto, Ryosuke; Chen, Shang; Fukasawa, Masanaga; Uesawa, Fumikatsu; Sekine, Makoto; Hori, Masaru; Tatsumi, Tetsuya

2011-08-01

GaN-based optical devices are fabricated using a GaN/InGaN/GaN sandwiched structure. The effect of radicals, ions, and UV light on the GaN optical properties during Cl2/SiCl4/Ar plasma etching was evaluated using photoluminescence (PL) analysis. The samples were exposed to plasma (radicals, ions, and UV light) using an inductively coupled plasma (ICP) etching system and a plasma ion beam apparatus that can separate the effects of UV and ions both with and without covering the SiO2 window on the surface. Etching damage in an InGaN single quantum well (SQW) was formed by exposing the sample to plasma. The damage, which decreases PL emission intensity, was generated not only by ion beam irradiation but also by UV light irradiation. PL intensity decreased when the thickness of the upper GaN layer was etched to less than 60 nm. In addition, simultaneous irradiation of UV light and ions slightly increased the degree of damage. There seems to be a synergistic effect between the UV light and the ions. For high-quality GaN-based optoelectronics and power devices, UV light must be controlled during etching processes in addition to the etching profile, selectivity, and ion bombardment damage.

Magnetron with flux switching cathode and method of operation

DOEpatents

Aaron, D.B.; Wiley, J.D.

1989-09-12

A magnetron sputtering apparatus is formed with a plurality of cells each for generating an independent magnetic field within a different region in the chamber of the apparatus. Each magnetic field aids in maintaining an ion plasma in the respective region of the chamber. One of a plurality of sputtering material targets is positioned on an electrode adjacent to each region so that said ions strike the target ejecting some of the target material. By selectively generating each magnetic field, the ion plasma may be moved from region to region to sputter material from different targets. The sputtered material becomes deposited on a substrate mounted on another electrode within the chamber. The duty cycle of each cell can be dynamically varied during the deposition to produce a layer having a graded composition throughout its thickness. 5 figs.

Magnetron with flux switching cathode and method of operation

DOEpatents

Aaron, David B.; Wiley, John D.

1989-01-01

A magnetron sputtering apparatus is formed with a plurality of cells each for generating an independent magnetic field within a different region in the chamber of the apparatus. Each magnetic field aids in maintaining an ion plasma in the respective region of the chamber. One of a plurality of sputtering material targets is positioned on an electrode adjacent to each region so that said ions strike the target ejecting some of the target material. By selectively generating each magnetic field, the ion plasma may be moved from region to region to sputter material from different targets. The sputtered material becomes deposited on a substrate mounted on another electrode within the chamber. The duty cycle of each cell can be dynamically varied during the deposition to produce a layer having a graded composition throughout its thickness.

Relation between active-layer thickness and power conversion efficiency in P3HT:PCBM inverted organic photovoltaics

NASA Astrophysics Data System (ADS)

Nakami, S.; Narioka, T.; Kobayashi, T.; Nagase, T.; Naito, H.

2017-11-01

The dependence of active-layer thickness on the power conversion efficiency (PCE) of inverted organic photovoltaics (OPVs) based on poly(3-hexylthiphene) and [6,6]-phenyl-C61-butyric acid methyl ester was investigated. When PCEs were measured immediately after device fabrication, the optimum thickness was ~100 nm. It was, however, found that thick OPVs exhibit higher PCEs a few months later, whereas thin OPVs simply degraded with time. Consequently, the optimum thickness changed with time. Considering this fact, we discuss the relationship between the active-layer thickness and PCE.

Domain epitaxy for thin film growth

DOEpatents

Narayan, Jagdish

2005-10-18

A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h.sub.c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Wug-Dong; Tanioka, Kenkichi

Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) film has been used for highly sensitive imaging devices. To improve the spectral response of a-Se HARP photoconductive film at a long wavelength, the tellurium (Te) doping effect in an 8-μm-thick a-Se HARP film was investigated. The thickness of the Te-doped a-Se layer in the 8-μm-thick a-Se HARP films was varied from 60 to 120 nm. The signal current increases significantly due to the avalanche multiplication when the target voltage is increased over the threshold voltage. In the 8-μm-thick a-Se HARP film with a Te-doped layer, the spectral response at a longmore » wavelength was improved in comparison with the a-Se HARP film without a Te-doped layer. In addition, the increase of the lag in the 8-μm-thick a-Se HARP target with a Te-doped layer of 120 nm is caused by the photoconductive lag due to the electrons trapped in the Te-doped layer. Based on the current-voltage characteristics, spectral response, and lag characteristics of the 8-μm-thick a-Se HARP targets, the Te-doped layer thickness of 90 nm is suitable for the 8-μm-thick a-Se HARP film.« less

Tellurium doping effect in avalanche-mode amorphous selenium photoconductive film

NASA Astrophysics Data System (ADS)

Park, Wug-Dong; Tanioka, Kenkichi

2014-11-01

Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) film has been used for highly sensitive imaging devices. To improve the spectral response of a-Se HARP photoconductive film at a long wavelength, the tellurium (Te) doping effect in an 8-μm-thick a-Se HARP film was investigated. The thickness of the Te-doped a-Se layer in the 8-μm-thick a-Se HARP films was varied from 60 to 120 nm. The signal current increases significantly due to the avalanche multiplication when the target voltage is increased over the threshold voltage. In the 8-μm-thick a-Se HARP film with a Te-doped layer, the spectral response at a long wavelength was improved in comparison with the a-Se HARP film without a Te-doped layer. In addition, the increase of the lag in the 8-μm-thick a-Se HARP target with a Te-doped layer of 120 nm is caused by the photoconductive lag due to the electrons trapped in the Te-doped layer. Based on the current-voltage characteristics, spectral response, and lag characteristics of the 8-μm-thick a-Se HARP targets, the Te-doped layer thickness of 90 nm is suitable for the 8-μm-thick a-Se HARP film.

Electron Scattering at Surfaces of Epitaxial Metal Layers

NASA Astrophysics Data System (ADS)

Chawla, Jasmeet Singh

In the field of electron transport in metal films and wires, the 'size effect' refers to the increase in the resistivity of the films and wires as their critical dimensions (thickness of film, width and height of wires) approach or become less than the electron mean free path lambda, which is, for example, 39 nm for bulk copper at room temperature. This size-effect is currently of great concern to the semiconductor industry because the continued downscaling of feature sizes has already lead to Cu interconnect wires in this size effect regime, with a reported 2.5 times higher resistivity for 40 nm wide Cu wires than for bulk Cu. Silver is a possible alternate material for interconnect wires and titanium nitride is proposed as a gate metal in novel field-effect-transistors. Therefore, it is important to develop an understanding of how the growth, the surface morphology, and the microstructure of ultrathin (few nanometers) Cu, Ag and TiN layers affect their electrical properties. This dissertation aims to advance the scientific knowledge of electron scattering at surfaces (external surfaces and grain boundaries), that are, the primary reasons for the size-effect in metal conductors. The effect of surface and grain boundary scattering on the resistivity of Cu thin films and nanowires is separately quantified using (i) in situ transport measurements on single-crystal, atomically smooth Cu(001) layers, (ii) textured polycrystalline Cu(111) layers and patterned wires with independently varying grain size, thickness and line width, and (iii) in situ grown interfaces including Cu-Ta, Cu-MgO, Cu-vacuum and Cu-oxygen. In addition, the electron surface scattering is also measured in situ for single-crystal Ag(001), (111) twinned epitaxial Ag(001), and single-crystal TiN(001) layers. Cu(001), Ag(001), and TiN(001) layers with a minimum continuous thickness of 4, 3.5 and 1.8 nm, respectively, are grown by ultra-high vacuum magnetron sputter deposition on MgO(001) substrates with and without thin epitaxial TiN(001) wetting layers and are studied for structure, crystalline quality, surface morphology, density and composition by a combination of x-ray diffraction theta-2theta scans, o-rocking curves, pole figures, reciprocal space mapping, Rutherford backscattering, x-ray reflectometry and transmission electron microscopy. The TiN(001) surface suppresses Cu and Ag dewetting, yielding lower defect density, no twinning, and smaller surface roughness than if grown on MgO(001). Textured polycrystalline Cu(111) layers 25-50-nm-thick are deposited on a stack of 7.5-nm-Ta on SiO2/Si(001), and subsequent in situ annealing at 350°C followed by sputter etching in Ar plasma yields Cu layers with independently variable thickness and grain size. Cu nanowires, 75 to 350 nm wide, are fabricated from Cu layers with different average grain size using a subtractive patterning process. In situ electron transport measurements at room temperature in vacuum and at 77 K in liquid nitrogen for single-crystal Cu and Ag layers is consistent with the Fuchs-Sondheimer (FS) model and indicates specular scattering at the metal-vacuum boundary with an average specularity parameter p = 0.8 and 0.6, respectively. In contrast, layers measured ex situ show diffuse surface scattering due to sub-monolayer oxidation. Also, addition of Ta atoms on Cu(001) surface perturbs the smooth interface potential and results in completely diffuse scattering at the Cu-Ta interface, and in turn, a higher resistivity of single-crystal Cu layers. In situ exposure of Cu(001) layers to O2 between 10 -3 and 105 Pa-s results in a sequential increase, decrease and increase of the electrical resistance which is attributed to specular surface scattering for clean Cu(001) and for surfaces with a complete adsorbed monolayer, but diffuse scattering at partial coverage and after chemical oxidation. Electron transport measurements for polycrystalline Cu layers and wires show a 10-15% and 7-9% decrease in resistivity, respectively, when increasing the average lateral grain size by a factor of 1.8. The maximum resistivity decrease that can be achieved by increasing the grain size of polycrystalline Cu layers with an average grain size approximately ˜2.5x the layer thickness is 20-26%.

High spectral selectivity for solar absorbers using a monolayer transparent conductive oxide coated on a metal substrate

NASA Astrophysics Data System (ADS)

Shimizu, Makoto; Suzuki, Mari; Iguchi, Fumitada; Yugami, Hiroo

2017-05-01

A spectrally selective absorber composed of a monolayer transparent conductive oxide (TCO) coated on a metal substrate is investigated for use in solar systems operating at temperatures higher (>973 K) than the operation temperature of conventional systems ( ˜ 673 K). This method is different from the currently used solar-selective coating technologies, such as those using multilayered and cermet materials. The spectral selective absorption property can be attributed to the inherent optical property of TCO owing to the plasma frequency and interferences between the substrates. Since spectral selectivity can be achieved using monolayered materials, the effect of atomic diffusion occurring at each layer boundary in a multilayer or cermet coatings under high-temperature conditions can be reduced. In addition, since this property is attributed to the inherent property of TCO, the precise control of the layer thickness can be omitted if the layer is sufficiently thick (>0.5 μm). The optimum TCO properties, namely, carrier density and mobility, required for solar-selective absorbers are analyzed to determine the cutoff wavelength and emittance in the infrared range. A solar absorptance of 0.95 and hemispherical emittance of 0.10 at 973 K are needed for achieving the optimum TCO properties, i.e., a carrier density of 5.5 × 1020 cm-3 and mobility of 90 cm2 V-1 s-1 are required. Optical simulations indicate that the spectrally selective absorption weakly depends on the incident angle and film thickness. The thermal stability of the fabricated absorber treated at temperatures up to 973 K for 10 h is verified in vacuum by introducing a SiO2 interlayer, which plays an important role as a diffusion barrier.

Effect of laser peening with glycerol as plasma confinement layer

NASA Astrophysics Data System (ADS)

Tsuyama, Miho; Ehara, Naoya; Yamashita, Kazuma; Heya, Manabu; Nakano, Hitoshi

2018-03-01

The effects of controlling the plasma confinement layer on laser peening were investigated by measuring the hardness and residual stress of laser-peened stainless steels. The plasma confinement layer contributes to increasing the pressure of shock waves by suppressing the expansion of the laser-produced plasma. Most previous studies on laser peening have employed water as the plasma confinement layer. In this study, a glycerol solution is used in the context of a large acoustic impedance. It is found that this glycerol solution is superior to water in its ability to confine plasma and that suitable conditions exist for the glycerol solution to act as a plasma confinement layer to achieve efficient laser peening.

Nano-thick calcium oxide armed titanium: boosts bone cells against methicillin-resistant Staphylococcus aureus

NASA Astrophysics Data System (ADS)

Cao, Huiliang; Qin, Hui; Zhao, Yaochao; Jin, Guodong; Lu, Tao; Meng, Fanhao; Zhang, Xianlong; Liu, Xuanyong

2016-02-01

Since the use of systemic antibiotics for preventing acute biomaterial-associated infections (BAIs) may build up bacterial resistance and result in huge medical costs and unpredictable mortality, new precaution strategies are required. Here, it demonstrated that titanium armed with a nano-thick calcium oxide layer was effective on averting methicillin-resistant Staphylococcus aureus (MRSA) infections in rabbits. The calcium oxide layer was constructed by, firstly, injecting of metallic calcium into titanium via a plasma immersion ion implantation process, and then transforming the outer most surface into oxide by exposing to the atmosphere. Although the calcium oxide armed titanium had a relative low reduction rate (~74%) in growth of MRSA in vitro, it could markedly promote the osteogenic differentiation of bone marrow stem cells (BMSCs), restore local bone integration against the challenge of MRSA, and decrease the incidence of MRSA infection with a rate of 100% (compared to the titanium control). This study demonstrated for the first time that calcium, as one of the major elements in a human body, could be engineered to avert MRSA infections, which is promising as a safe precaution of disinfection for implantable biomedical devices.

Nano-thick calcium oxide armed titanium: boosts bone cells against methicillin-resistant Staphylococcus aureus

PubMed Central

Cao, Huiliang; Qin, Hui; Zhao, Yaochao; Jin, Guodong; Lu, Tao; Meng, Fanhao; Zhang, Xianlong; Liu, Xuanyong

2016-01-01

Since the use of systemic antibiotics for preventing acute biomaterial-associated infections (BAIs) may build up bacterial resistance and result in huge medical costs and unpredictable mortality, new precaution strategies are required. Here, it demonstrated that titanium armed with a nano-thick calcium oxide layer was effective on averting methicillin-resistant Staphylococcus aureus (MRSA) infections in rabbits. The calcium oxide layer was constructed by, firstly, injecting of metallic calcium into titanium via a plasma immersion ion implantation process, and then transforming the outer most surface into oxide by exposing to the atmosphere. Although the calcium oxide armed titanium had a relative low reduction rate (~74%) in growth of MRSA in vitro, it could markedly promote the osteogenic differentiation of bone marrow stem cells (BMSCs), restore local bone integration against the challenge of MRSA, and decrease the incidence of MRSA infection with a rate of 100% (compared to the titanium control). This study demonstrated for the first time that calcium, as one of the major elements in a human body, could be engineered to avert MRSA infections, which is promising as a safe precaution of disinfection for implantable biomedical devices. PMID:26899567

Nano-thick calcium oxide armed titanium: boosts bone cells against methicillin-resistant Staphylococcus aureus.

PubMed

Cao, Huiliang; Qin, Hui; Zhao, Yaochao; Jin, Guodong; Lu, Tao; Meng, Fanhao; Zhang, Xianlong; Liu, Xuanyong

2016-02-22

Since the use of systemic antibiotics for preventing acute biomaterial-associated infections (BAIs) may build up bacterial resistance and result in huge medical costs and unpredictable mortality, new precaution strategies are required. Here, it demonstrated that titanium armed with a nano-thick calcium oxide layer was effective on averting methicillin-resistant Staphylococcus aureus (MRSA) infections in rabbits. The calcium oxide layer was constructed by, firstly, injecting of metallic calcium into titanium via a plasma immersion ion implantation process, and then transforming the outer most surface into oxide by exposing to the atmosphere. Although the calcium oxide armed titanium had a relative low reduction rate (~74%) in growth of MRSA in vitro, it could markedly promote the osteogenic differentiation of bone marrow stem cells (BMSCs), restore local bone integration against the challenge of MRSA, and decrease the incidence of MRSA infection with a rate of 100% (compared to the titanium control). This study demonstrated for the first time that calcium, as one of the major elements in a human body, could be engineered to avert MRSA infections, which is promising as a safe precaution of disinfection for implantable biomedical devices.

Relationship between white matter hyperintensities and retinal nerve fiber layer, choroid, and ganglion cell layer thickness in migraine patients.

PubMed

Iyigundogdu, Ilkin; Derle, Eda; Asena, Leyla; Kural, Feride; Kibaroglu, Seda; Ocal, Ruhsen; Akkoyun, Imren; Can, Ufuk

2018-02-01

Aim To compare the relationship between white matter hyperintensities (WMH) on brain magnetic resonance imaging and retinal nerve fiber layer (RNFL), choroid, and ganglion cell layer (GCL) thicknesses in migraine patients and healthy subjects. We also assessed the role of cerebral hypoperfusion in the formation of these WMH lesions. Methods We enrolled 35 migraine patients without WMH, 37 migraine patients with WMH, and 37 healthy control subjects examined in the Neurology outpatient clinic of our tertiary center from May to December 2015. RFNL, choroid, and GCL thicknesses were measured by optic coherence tomography. Results There were no differences in the RFNL, choroid, or GCL thicknesses between migraine patients with and without WMH ( p > 0.05). Choroid layer thicknesses were significantly lower in migraine patients compared to control subjects ( p < 0.05), while there were no differences in RFNL and GCL thicknesses ( p > 0.05). Conclusions The 'only cerebral hypoperfusion' theory was insufficient to explain the pathophysiology of WMH lesions in migraine patients. In addition, the thinning of the choroid thicknesses in migraine patients suggests a potential causative role for cerebral hypoperfusion and decreased perfusion pressure of the choroid layer.

High efficiency organic photovoltaic cells employing hybridized mixed-planar heterojunctions

DOEpatents

Xue, Jiangeng; Uchida, Soichi; Rand, Barry P; Forrest, Stephen

2013-11-19

A device is provided, having a first electrode, a second electrode, and a photoactive region disposed between the first electrode and the second electrode. The photoactive region includes a first organic layer comprising a mixture of an organic acceptor material and an organic donor material, wherein the first organic layer has a thickness not greater than 0.8 characteristic charge transport lengths, and a second organic layer in direct contact with the first organic layer, wherein: the second organic layer comprises an unmixed layer of the organic acceptor material or the organic donor material of the first organic layer, and the second organic layer has a thickness not less than about 0.1 optical absorption lengths. Preferably, the first organic layer has a thickness not greater than 0.3 characteristic charge transport lengths. Preferably, the second organic layer has a thickness of not less than about 0.2 optical absorption lengths. Embodiments of the invention can be capable of power efficiencies of 2% or greater, and preferably 5% or greater.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO 2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C 4F 8 and CHF 3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32,more » 020603 (2014), and D. Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO 2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF 3 has a lower FC deposition yield for both SiO 2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F 8. The thickness of deposited FC layers using CHF 3 is found to be greater for Si than for SiO 2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.« less

Effect of layer thickness on the thermal release from Be-D co-deposited layers

NASA Astrophysics Data System (ADS)

Baldwin, M. J.; Doerner, R. P.

2014-08-01

The results of previous work (Baldwin et al 2013 J. Nucl. Mater. 438 S967-70 and Baldwin et al 2014 Nucl. Fusion 54 073005) are extended to explore the influence of layer thickness on the thermal D2 release from co-deposited Be-(0.05)D layers produced at ˜323 K. Bake desorption of layers of thickness 0.2-0.7 µm are explored with a view to examine the influence of layer thickness on the efficacy of the proposed ITER bake procedure, to be carried out at the fixed temperatures of 513 K on the first wall and 623 K in the divertor. The results of experiment and modelling with the TMAP-7 hydrogen transport code, show that thicker Be-D co-deposited layers are relatively more difficult to desorb (time-wise) than thinner layers with the same concentrations of intrinsic traps and retained hydrogen isotope fraction.

Ellipsometric study of metal-organic chemically vapor deposited III-V semiconductor structures

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Sekula-Moise, Patricia A.; Sieg, Robert M.; Drotos, Mark N.; Bogner, Nancy A.

1992-01-01

An ellipsometric study of MOCVD-grown layers of AlGaAs and InGaAs in thick films and strained layer complex structures is presented. It is concluded that the ternary composition of thick nonstrained layers can be accurately determined to within experimental errors using numerical algorithms. In the case of complex structures, thickness of all layers and the alloy composition of nonstrained layers can be determined simultaneously, provided that the correlations between parameters is no higher than 0.9.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Rabindar K.; Reddy, G. B.

In this work, we have successfully developed plasma assisted paste sublimation route to deposit vertically aligned MoO{sub 3} nanoflakes (NFs) on nickel coated glass substrate in oxygen plasma ambience with the assistant of Ni thin layer as a catalyst. In our case, sublimation source (Mo strip surface) is resistively heated by flowing current across it. The structural, morphological, and optical properties of NFs have been investigated systematically using x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), High resolution transmission electron microscopy (HRTEM), micro-Raman spectroscopy, and Photoluminescence (PL) spectroscopy. Studies reveal thatmore » the presence of oxygen plasma and the nickel thin layer are very essential for the growth of vertically aligned NFs. The observed results divulge that α-MoO{sub 3} NFs are deposited uniformly on large scale with very high aspect (height/thickness) ratio more than 30 and well aligned along [0 k 0] crystallographic direction where k is even (2, 4, 6). Raman spectrum shows a significant size effect on the vibrational property of MoO{sub 3} nanoflakes. The PL spectrum of MoO{sub 3} NFs was recorded at room temperature and four prominent peaks at 365 nm, 395 nm, 452 nm, and 465 nm corresponding to UV-visible region were observed. In this paper, a three step growth strategy for the formation of MoO{sub 3} NFs has been proposed in detail.« less

Suspension thermal spraying of hydroxyapatite: microstructure and in vitro behaviour.

PubMed

Bolelli, Giovanni; Bellucci, Devis; Cannillo, Valeria; Lusvarghi, Luca; Sola, Antonella; Stiegler, Nico; Müller, Philipp; Killinger, Andreas; Gadow, Rainer; Altomare, Lina; De Nardo, Luigi

2014-01-01

In cementless fixation of metallic prostheses, bony ingrowth onto the implant surface is often promoted by osteoconductive plasma-sprayed hydroxyapatite coatings. The present work explores the use of the innovative High Velocity Suspension Flame Spraying (HVSFS) process to coat Ti substrates with thin homogeneous hydroxyapatite coatings. The HVSFS hydroxyapatite coatings studied were dense, 27-37μm thick, with some transverse microcracks. Lamellae were sintered together and nearly unidentifiable, unlike conventional plasma-sprayed hydroxyapatite. Crystallinities of 10%-70% were obtained, depending on the deposition parameters and the use of a TiO2 bond coat. The average hardness of layers with low (<24%) and high (70%) crystallinity was ≈3.5GPa and ≈4.5GPa respectively. The distributions of hardness values, all characterised by Weibull modulus in the 5-7 range, were narrower than that of conventional plasma-sprayed hydroxyapatite, with a Weibull modulus of ≈3.3. During soaking in simulated body fluid, glassy coatings were progressively resorbed and replaced by a new, precipitated hydroxyapatite layer, whereas coatings with 70% crystallinity were stable up to 14days of immersion. The interpretation of the precipitation behaviour was also assisted by surface charge assessments, performed through Z-potential measurements. During in vitro tests, HA coatings showed no cytotoxicity towards the SAOS-2 osteoblast cell line, and surface cell proliferation was comparable with proliferation on reference polystyrene culture plates. © 2013.

Plasma-enhanced atomic layer deposition for plasmonic TiN

NASA Astrophysics Data System (ADS)

Otto, Lauren M.; Hammack, Aaron T.; Aloni, Shaul; Ogletree, D. Frank; Olynick, Deirdre L.; Dhuey, Scott; Stadler, Bethanie J. H.; Schwartzberg, Adam M.

2016-09-01

This work presents the low temperature plasma-enhanced atomic layer deposition (PE-ALD) of TiN, a promising plasmonic synthetic metal. The plasmonics community has immediate needs for alternatives to traditional plasmonic materials (e.g. Ag and Au), which lack chemical, thermal, and mechanical stability. Plasmonic alloys and synthetic metals have significantly improved stability, but their growth can require high-temperatures (>400 °C), and it is difficult to control the thickness and directionality of the resulting film, especially on technologically important substrates. Such issues prevent the application of alternative plasmonic materials for both fundamental studies and large-scale industrial applications. Alternatively, PE-ALD allows for conformal deposition on a variety of substrates with consistent material properties. This conformal coating will allow the creation of exotic three-dimensional structures, and low-temperature deposition techniques will provide unrestricted usage across a variety of platforms. The characterization of this new plasmonic material was performed with in-situ spectroscopic ellipsometry as well as Auger electron spectroscopy for analysis of TiN film sensitivity to oxide cross-contamination. Plasmonic TiN films were fabricated, and a chlorine plasma etch was found to pattern two dimensional gratings as a test structure. Optical measurements of 900 nm period gratings showed reasonable agreement with theoretical modeling of the fabricated structures, indicating that ellipsometry models of the TiN were indeed accurate.

POD analysis of flow over a backward-facing step forced by right-angle-shaped plasma actuator.

PubMed

Wang, Bin; Li, Huaxing

2016-01-01

This study aims to present flow control over the backward-facing step with specially designed right-angle-shaped plasma actuator and analyzed the influence of various scales of flow structures on the Reynolds stress through snapshot proper orthogonal decomposition (POD). 2D particle image velocimetry measurements were conducted on region (x/h = 0-2.25) and reattachment zone in the x-y plane over the backward-facing step at a Reynolds number of Re h  = 27,766 (based on step height [Formula: see text] and free stream velocity [Formula: see text]. The separated shear layer was excited by specially designed right-angle-shaped plasma actuator under the normalized excitation frequency St h  ≈ 0.345 along the 45° direction. The spatial distribution of each Reynolds stress component was reconstructed using an increasing number of POD modes. The POD analysis indicated that the flow dynamic downstream of the step was dominated by large-scale flow structures, which contributed to streamwise Reynolds stress and Reynolds shear stress. The intense Reynolds stress localized to a narrow strip within the shear layer was mainly affected by small-scale flow structures, which were responsible for the recovery of the Reynolds stress peak. With plasma excitation, a significant increase was obtained in the vertical Reynolds stress peak. Under the dimensionless frequencies St h  ≈ 0.345 and [Formula: see text] which are based on the step height and momentum thickness, the effectiveness of the flow control forced by the plasma actuator along the 45° direction was ordinary. Only the vertical Reynolds stress was significantly affected.

Competitions between Rayleigh-Taylor instability and Kelvin-Helmholtz instability with continuous density and velocity profiles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ye, W. H.; He, X. T.; CAPT, Peking University, Beijing 100871

2011-02-15

In this research, competitions between Rayleigh-Taylor instability (RTI) and Kelvin-Helmholtz instability (KHI) in two-dimensional incompressible fluids within a linear growth regime are investigated analytically. Normalized linear growth rate formulas for both the RTI, suitable for arbitrary density ratio with continuous density profile, and the KHI, suitable for arbitrary density ratio with continuous density and velocity profiles, are obtained. The linear growth rates of pure RTI ({gamma}{sub RT}), pure KHI ({gamma}{sub KH}), and combined RTI and KHI ({gamma}{sub total}) are investigated, respectively. In the pure RTI, it is found that the effect of the finite thickness of the density transition layermore » (L{sub {rho}}) reduces the linear growth of the RTI (stabilizes the RTI). In the pure KHI, it is found that conversely, the effect of the finite thickness of the density transition layer increases the linear growth of the KHI (destabilizes the KHI). It is found that the effect of the finite thickness of the density transition layer decreases the ''effective'' or ''local'' Atwood number (A) for both the RTI and the KHI. However, based on the properties of {gamma}{sub RT}{proportional_to}{radical}(A) and {gamma}{sub KH}{proportional_to}{radical}(1-A{sup 2}), the effect of the finite thickness of the density transition layer therefore has a completely opposite role on the RTI and the KHI noted above. In addition, it is found that the effect of the finite thickness of the velocity shear layer (L{sub u}) stabilizes the KHI, and for the most cases, the combined effects of the finite thickness of the density transition layer and the velocity shear layer (L{sub {rho}=}L{sub u}) also stabilize the KHI. Regarding the combined RTI and KHI, it is found that there is a competition between the RTI and the KHI because of the completely opposite effect of the finite thickness of the density transition layer on these two kinds of instability. It is found that the competitions between the RTI and the KHI depend, respectively, on the Froude number, the density ratio of the light fluid to the heavy one, and the finite thicknesses of the density transition layer and the velocity shear layer. Furthermore, for the fixed Froude number, the linear growth rate ratio of the RTI to the KHI decreases with both the density ratio and the finite thickness of the density transition layer, but increases with the finite thickness of the velocity shear layer and the combined finite thicknesses of the density transition layer and the velocity shear layer (L{sub {rho}=}L{sub u}). In summary, our analytical results show that the effect of the finite thickness of the density transition layer stabilizes the RTI and the overall combined effects of the finite thickness of the density transition layer and the velocity shear layer (L{sub {rho}=}L{sub u}) also stabilize the KHI. Thus, it should be included in applications where the transition layer effect plays an important role, such as the formation of large-scale structures (jets) in high energy density physics and astrophysics and turbulent mixing.« less

Strong Effect of Azodye Layer Thickness on RM-Stabilized Photoalignment

DTIC Science & Technology

2017-05-21

to thicker layers (~40 nm). Author Keywords photoalignment; azodye; reactive mesogen 1. Introduction Photoalignment of liquid crystals by azodye...Polymerizable azodyes[3] as well as passivation of the azodye film by spin-coating with a layer of reactive mesogen[4] are currently proposed solutions...thick alignment film rather than a ~40 nm thick alignment film ; cells with thin alignment layers are stable to exposure to polarized light for at

Controlled Patterning and Growth of Single Wall and Multi-wall Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Delzeit, Lance D. (Inventor)

2005-01-01

Method and system for producing a selected pattern or array of at least one of a single wall nanotube and/or a multi-wall nanotube containing primarily carbon. A substrate is coated with a first layer (optional) of a first selected metal (e.g., Al and/or Ir) and with a second layer of a catalyst (e.g., Fe, Co, Ni and/or Mo), having selected first and second layer thicknesses provided by ion sputtering, arc discharge, laser ablation, evaporation or CVD. The first layer and/or the second layer may be formed in a desired non-uniform pattern, using a mask with suitable aperture(s), to promote growth of carbon nanotubes in a corresponding pattern. A selected heated feed gas (primarily CH4 or C2Hn with n=2 and/or 4) is passed over the coated substrate and forms primarily single wall nanotubes or multiple wall nanotubes, depending upon the selected feed gas and its temperature. Nanofibers, as well as single wall and multi-wall nanotubes, are produced using plasma-aided growth from the second (catalyst) layer. An overcoating of a selected metal or alloy can be deposited, over the second layer, to provide a coating for the carbon nanotubes grown in this manner.

About properties of ZrO2 thermal protective coatings obtained from spherical powder mixtures

NASA Astrophysics Data System (ADS)

Berdnik, O. B.; Tsareva, I. N.; Tarasenko, Yu P.

2017-05-01

It is developed the technology of high-energy plasma spraying of the zirconium dioxide (ZrO2) thermal protective coating on the basis of ZrO2 tetragonal and cubic phases with the spheroidal grain shape and the columnar substructure, with the total porosity P = 4 %, the hardness HV = 12 GPa, the roughness parameter R a ˜ 6 μm, the thickness 0.3-3 mm. As a sublayer it is used the heat-resistant coating of “Ni-Co-Cr-Al-Y” system with an intermetallic phase composition and the layered microstructure of the grains.

Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choudhary, B. S.; Rajasthan Technical University, Rawatbhata Road, Kota 324010; Singh, A.

We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surfacemore » with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.« less

Carbon-containing compounds on fusion-related surfaces: Thermal and ion-induced formation and erosion

NASA Astrophysics Data System (ADS)

Linsmeier, Christian

2004-12-01

The deposition of carbon on metals is the unavoidable consequence of the application of different wall materials in present and future fusion experiments like ITER. Presently used and prospected materials besides carbon (CFC materials in high heat load areas) are tungsten and beryllium. The simultaneous application of different materials leads to the formation of surface compounds due to the erosion, transport and re-deposition of material during plasma operations. The formation and erosion processes are governed by widely varying surface temperatures and kinetic energies as well as the spectrum of impinging particles from the plasma. The knowledge of the dependence on these parameters is crucial for the understanding and prediction of the compound formation on wall materials. The formation of surface layers is of great importance, since they not only determine erosion rates, but also influence the ability of the first wall for hydrogen isotope inventory accumulation and release. Surface compound formation, diffusion and erosion phenomena are studied under well-controlled ultra-high vacuum conditions using in-situ X-ray photoelectron spectroscopy (XPS) and ion beam analysis techniques available at a 3 MV tandem accelerator. XPS provides chemical information and allows distinguishing elemental and carbidic phases with high surface sensitivity. Accelerator-based spectroscopies provide quantitative compositional analysis and sensitivity for deuterium in the surface layers. Using these techniques, the formation of carbidic layers on metals is studied from room temperature up to 1700 K. The formation of an interfacial carbide of several monolayers thickness is not only observed for metals with exothermic carbide formation enthalpies, but also in the cases of Ni and Fe which form endothermic carbides. Additional carbon deposited at 300 K remains elemental. Depending on the substrate, carbon diffusion into the bulk starts at elevated temperatures together with additional carbide formation. Depending on the bond nature in the carbide (metallic in the transition metal carbides, ionic e.g. in Be2C), the surface carbide layer is dissolved upon further increased temperatures or remains stable. Carbide formation can also be initiated by ion bombardment, both of chemically inert noble gas ions or C+ or CO+ ions. In the latter case, a deposition-erosion equilibrium develops which leads to a ternary surface layer of constant thickness. A chemical erosion channel is also discussed for the enhanced erosion of thin carbon films on metals by deuterium ions.

Quantitative thickness measurement of polarity-inverted piezoelectric thin-film layer by scanning nonlinear dielectric microscopy

NASA Astrophysics Data System (ADS)

Odagawa, Hiroyuki; Terada, Koshiro; Tanaka, Yohei; Nishikawa, Hiroaki; Yanagitani, Takahiko; Cho, Yasuo

2017-10-01

A quantitative measurement method for a polarity-inverted layer in ferroelectric or piezoelectric thin film is proposed. It is performed nondestructively by scanning nonlinear dielectric microscopy (SNDM). In SNDM, linear and nonlinear dielectric constants are measured using a probe that converts the variation of capacitance related to these constants into the variation of electrical oscillation frequency. In this paper, we describe a principle for determining the layer thickness and some calculation results of the output signal, which are related to the radius of the probe tip and the thickness of the inverted layer. Moreover, we derive an equation that represents the relationship between the output signal and the oscillation frequency of the probe and explain how to determine the thickness from the measured frequency. Experimental results in Sc-doped AlN piezoelectric thin films that have a polarity-inverted layer with a thickness of 1.5 µm fabricated by radio frequency magnetron sputtering showed a fairly good value of 1.38 µm for the thickness of the polarity-inverted layer.

Work Function Variations in Twisted Graphene Layers

DOE PAGES

Robinson, Jeremy T.; Culbertson, James; Berg, Morgann; ...

2018-01-31

By combining optical imaging, Raman spectroscopy, kelvin probe force microscopy (KFPM), and photoemission electron microscopy (PEEM), we show that graphene’s layer orientation, as well as layer thickness, measurably changes the surface potential (Φ). Detailed mapping of variable-thickness, rotationally-faulted graphene films allows us to correlate Φ with specific morphological features. Using KPFM and PEEM we measure ΔΦ up to 39 mV for layers with different twist angles, while ΔΦ ranges from 36–129 mV for different layer thicknesses. The surface potential between different twist angles or layer thicknesses is measured at the KPFM instrument resolution of ≤ 200 nm. The PEEM measuredmore » work function of 4.4 eV for graphene is consistent with doping levels on the order of 10 12cm -2. Here, we find that Φ scales linearly with Raman G-peak wavenumber shift (slope = 22.2 mV/cm -1) for all layers and twist angles, which is consistent with doping-dependent changes to graphene’s Fermi energy in the ‘high’ doping limit. Our results here emphasize that layer orientation is equally important as layer thickness when designing multilayer two-dimensional systems where surface potential is considered.« less

Crystallization of silicon-germanium by aluminum-induced layer exchange

NASA Astrophysics Data System (ADS)

Isomura, Masao; Yajima, Masahiro; Nakamura, Isao

2018-02-01

We have studied the crystallization of amorphous silicon-germanium (a-SiGe) by aluminum (Al)-induced layer exchange (ALILE) with a starting structure of glass/Al/Al oxide/a-SiGe. We examined ALILE at 450 °C, which is slightly higher than the eutectic temperature of Ge and Al, in order to shorten the ALILE time. We successfully produced c-SiGe films oriented in the (111) direction for 16 h without significant alloying. The thickness of Al layers should be 2800 Å or more to complete the ALILE for the a-SiGe layers of 2000-2800 Å thickness. When the Al layer is as thick as the a-SiGe layer, almost uniform c-SiGe is formed on the glass substrate. On the other hand, the islands of c-SiGe are formed on the glass substrate when the Al layer is thicker than the a-SiGe layer. The islands become smaller with thicker Al layers because more excess Al remains between the SiGe islands. The results indicate that the configuration of c-SiGe can be altered from a uniform structure to island structures of various sizes by changing the ratio of a-SiGe thickness to Al thickness.

Work Function Variations in Twisted Graphene Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Robinson, Jeremy T.; Culbertson, James; Berg, Morgann

By combining optical imaging, Raman spectroscopy, kelvin probe force microscopy (KFPM), and photoemission electron microscopy (PEEM), we show that graphene’s layer orientation, as well as layer thickness, measurably changes the surface potential (Φ). Detailed mapping of variable-thickness, rotationally-faulted graphene films allows us to correlate Φ with specific morphological features. Using KPFM and PEEM we measure ΔΦ up to 39 mV for layers with different twist angles, while ΔΦ ranges from 36–129 mV for different layer thicknesses. The surface potential between different twist angles or layer thicknesses is measured at the KPFM instrument resolution of ≤ 200 nm. The PEEM measuredmore » work function of 4.4 eV for graphene is consistent with doping levels on the order of 10 12cm -2. Here, we find that Φ scales linearly with Raman G-peak wavenumber shift (slope = 22.2 mV/cm -1) for all layers and twist angles, which is consistent with doping-dependent changes to graphene’s Fermi energy in the ‘high’ doping limit. Our results here emphasize that layer orientation is equally important as layer thickness when designing multilayer two-dimensional systems where surface potential is considered.« less

Alterations of the outer retina in non-arteritic anterior ischaemic optic neuropathy detected using spectral-domain optical coherence tomography.

PubMed

Ackermann, Philipp; Brachert, Maike; Albrecht, Philipp; Ringelstein, Marius; Finis, David; Geerling, Gerd; Aktas, Orhan; Guthoff, Rainer

2017-07-01

A characteristic disease pattern may be reflected by retinal layer thickness changes in non-arteritic anterior ischaemic optic neuropathy measured using spectraldomain optical coherence tomography. Retinal layer segmentation is enabled by advanced software. In this study, retinal layer thicknesses in acute and chronic non-arteritic anterior ischaemic optic neuropathy were compared. A single-centre cross-sectional analysis was used. A total of 27 patients (20 age-matched healthy eyes) were included: 14 with acute (<7 days) and 13 patients with chronic non-arteritic anterior ischaemic optic neuropathy. Macular volume and 12° peripapillary ring optical coherence tomography scans were used. The peripapillary thicknesses of the following layers were determined by manual segmentation: retinal nerve fibres, ganglion cells + inner plexiform layer, inner nuclear layer + outer plexiform layer, outer nuclear layer + inner segments of the photoreceptors and outer segments of the photoreceptors to Bruch's membrane. Macular retinal layer thicknesses were automatically determined in volume cubes centred on the fovea. Peripapillary retinal swelling in acute nonarteritic anterior ischaemic optic neuropathy was attributable to retinal nerve fibre layer, ganglion cell layer/inner plexiform layer and outer nuclear layer/segments of the photoreceptors thickening. In chronic cases, peripapillary retinal nerve fibre layer, macular ganglion cell layer and inner plexiform layer thinning were observed. In acute non-arteritic anterior ischaemic optic neuropathy, the inner and outer peripapillary retinal layers are affected by thickness changes. In chronic cases, atrophy of the ganglion cells and their axons and dendrites is evident by inner retinal layer thinning. © 2017 Royal Australian and New Zealand College of Ophthalmologists.

Effect of duration and severity of migraine on retinal nerve fiber layer, ganglion cell layer, and choroidal thickness.

PubMed

Abdellatif, Mona K; Fouad, Mohamed M

2018-03-01

To investigate the factors in migraine that have the highest significance on retinal and choroidal layers' thickness. Ninety patients with migraine and 40 age-matched healthy participants were enrolled in this observational, cross-sectional study. After full ophthalmological examination, spectral domain-optical coherence tomography was done for all patients measuring the thickness of ganglion cell layer and retinal nerve fiber layer. Enhanced depth imaging technique was used to measure the choroidal thickness. There was significant thinning in the superior and inferior ganglion cell layers, all retinal nerve fiber layer quadrants, and all choroidal quadrants (except for the central subfield) in migraineurs compared to controls. The duration of migraine was significantly correlated with ganglion cell layer, retinal nerve fiber layer, and all choroidal quadrants, while the severity of migraine was significantly correlated with ganglion cell layer and retinal nerve fiber layer only. Multiregression analysis showed that the duration of migraine is the most important determinant factor of the superior retinal nerve fiber layer quadrant (β = -0.375, p = 0.001) and in all the choroidal quadrants (β = -0.531, -0.692, -0.503, -0.461, -0.564, respectively, p  < 0.001), while severity is the most important determinant factor of inferior, nasal, and temporal retinal nerve fiber layer quadrants (β = -0.256, -0.335, -0.308; p  = 0.036, 0.005, 0.009, respectively) and the inferior ganglion cell layer hemisphere (β = -0.377 and p = 0.001). Ganglion cell layer, retinal nerve fiber layer, and choroidal thickness are significantly thinner in patients with migraine. The severity of migraine has more significant influence in the thinning of ganglion cell layer and retinal nerve fiber layer, while the duration of the disease affected the choroidal thickness more.

Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates.

PubMed

Li, Song-Lin; Miyazaki, Hisao; Song, Haisheng; Kuramochi, Hiromi; Nakaharai, Shu; Tsukagoshi, Kazuhito

2012-08-28

We demonstrate the possibility in quantifying the Raman intensities for both specimen and substrate layers in a common stacked experimental configuration and, consequently, propose a general and rapid thickness identification technique for atomic-scale layers on dielectric substrates. Unprecedentedly wide-range Raman data for atomically flat MoS(2) flakes are collected to compare with theoretical models. We reveal that all intensity features can be accurately captured when including optical interference effect. Surprisingly, we find that even freely suspended chalcogenide few-layer flakes have a stronger Raman response than that from the bulk phase. Importantly, despite the oscillating intensity of specimen spectrum versus thickness, the substrate weighted spectral intensity becomes monotonic. Combined with its sensitivity to specimen thickness, we suggest this quantity can be used to rapidly determine the accurate thickness for atomic layers.

Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns

NASA Astrophysics Data System (ADS)

Miyano, Yumiko; Narasaki, Ryota; Ichikawa, Takashi; Fukumoto, Atsushi; Aiso, Fumiki; Tamaoki, Naoki

2018-06-01

A multiscale simulation model is developed for optimizing the parameters of SiO2 plasma-enhanced atomic layer deposition of high-aspect-ratio hole patterns in three-dimensional (3D) stacked memory. This model takes into account the diffusion of a precursor in a reactor, that in holes, and the adsorption onto the wafer. It is found that the change in the aperture ratio of the holes on the wafer affects the concentration of the precursor near the top of the wafer surface, hence the deposition profile in the hole. The simulation results reproduced well the experimental results of the deposition thickness for the various hole aperture ratios. By this multiscale simulation, we can predict the deposition profile in a high-aspect-ratio hole pattern in 3D stacked memory. The atomic layer deposition parameters for conformal deposition such as precursor feeding time and partial pressure of precursor for wafers with various hole aperture ratios can be estimated.

Ink-jet printing technology enables self-aligned mould patterning for electroplating in a single step

NASA Astrophysics Data System (ADS)

Meissner, M. V.; Spengler, N.; Mager, D.; Wang, N.; Kiss, S. Z.; Höfflin, J.; While, P. T.; Korvink, J. G.

2015-06-01

We present a new self-aligned, mask-free micro-fabrication method with which to form thick-layered conductive metal micro-structures inside electroplating moulds. Seed layer patterning for electroplating was performed by ink-jet printing using a silver nano-particle ink deposited on SU-8 or Ordyl SY permanent resist. The silver ink contact angle on SU-8 was adjusted by oxygen plasma followed by a hard bake. Besides functioning as a seed layer, the printed structures further served as a shadow mask during patterning of electroplating moulds into negative photoresist. The printed silver tracks remained in strong adhesion to the substrate when exposed to the acidic chemistry of the electroplating bath. To demonstrate the process, we manufactured rectangular, low-resistivity planar micro-coils for use in magnetic resonance microscopy. MRI images of a spring onion with an in-plane resolution down to 10 µm × 10 µm were acquired using a micro-coil on an 11.7 T MRI scanner.

Producing air-stable monolayers of phosphorene and their defect engineering

PubMed Central

Pei, Jiajie; Gai, Xin; Yang, Jiong; Wang, Xibin; Yu, Zongfu; Choi, Duk-Yong; Luther-Davies, Barry; Lu, Yuerui

2016-01-01

It has been a long-standing challenge to produce air-stable few- or monolayer samples of phosphorene because thin phosphorene films degrade rapidly in ambient conditions. Here we demonstrate a new highly controllable method for fabricating high quality, air-stable phosphorene films with a designated number of layers ranging from a few down to monolayer. Our approach involves the use of oxygen plasma dry etching to thin down thick-exfoliated phosphorene flakes, layer by layer with atomic precision. Moreover, in a stabilized phosphorene monolayer, we were able to precisely engineer defects for the first time, which led to efficient emission of photons at new frequencies in the near infrared at room temperature. In addition, we demonstrate the use of an electrostatic gate to tune the photon emission from the defects in a monolayer phosphorene. This could lead to new electronic and optoelectronic devices, such as electrically tunable, broadband near infrared lighting devices operating at room temperature. PMID:26794866

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

NASA Astrophysics Data System (ADS)

Wang, Y. D.; Zang, K. Y.; Chua, S. J.; Tripathy, S.; Chen, P.; Fonstad, C. G.

2005-12-01

We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.