Photonic band gap in (Pb,La)(Zr,Ti)O3 inverse opals

NASA Astrophysics Data System (ADS)

Li, Bo; Zhou, Ji; Hao, Lifeng; Hu, Wei; Zong, Ruilong; Cai, Minmin; Fu, Min; Gui, Zhilun; Li, Longtu; Li, Qi

2003-05-01

(Pb,La)(Zr,Ti)O3 (PLZT) inverse opal photonic crystals were synthesized by a process of self-assembly in combination with a sol-gel technique. In this process, PLZT precursors were infiltrated into the interstices of the opal template assembled by monodisperse submicron polystyrene spheres, and then gelled in a humid environment. Polystyrene template was removed by calcining the specimen at a final temperature of 700 °C accompanied with the crystallization of perovskite phase in PLZT inverse opal network. Scanning electron microscope images show that the inverse opals possess a fcc structure with a lattice constant of 250 nm. A wide photonic band gap in the visible range is observed from transmission spectra of the sample. Such PLZT inverse opals as photonic crystals should be of importance in device applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Beihai; Hu, Zhongqiang; Koritala, Rachel E.

Ceramic film capacitors with high dielectric constant and high breakdown strength hold special promise for applications demanding high power density. By means of chemical solution deposition, we deposited ≈2-μm-thick films of lanthanum-doped lead zirconate titanate (PLZT) on LaNiO3-buffered Ni (LNO/Ni) foils and platinized silicon (PtSi) substrates. The dielectric properties and energy storage performance of the resulting samples were determined under a high level of applied electric field. X-ray diffraction stress analysis revealed that PLZT on LNO/Ni bears a compressive stress of ≈370 MPa while PLZT on PtSi endures a tensile stress of ≈250 MPa. Compressive stress was found to leadmore » to heightened polarization, improved tunability, increased irreversible domain wall motion, and enhanced breakdown strength for PLZT deposited on the LNO/Ni as compared with the PtSi substrate. We observed a tunability of ≈55 and ≈40 % at room temperature under 100 kV/cm applied field, remanent polarization of ≈23.5 and ≈7.4 µC/cm^2, coercive electric field of ≈25.6 and ≈21.1 kV/cm, and dielectric breakdown strength of ≈2.6 and ≈1.5 MV/cm for PLZT deposited on LNO/Ni foils and PtSi substrates, respectively. A high recoverable energy density of ≈85 J/cm^3 and energy conversion efficiency of ≈65 % were measured on the PLZT film grown on LNO/Ni.« less

Application of PLZT electro-optical shutter to diaphragm of visible and mid-infrared cameras

NASA Astrophysics Data System (ADS)

Fukuyama, Yoshiyuki; Nishioka, Shunji; Chonan, Takao; Sugii, Masakatsu; Shirahata, Hiromichi

1997-04-01

Pb0.9La0.09(Zr0.65,Ti0.35)0.9775O3 9/65/35) commonly used as an electro-optical shutter exhibits large phase retardation with low applied voltage. This shutter features as follows; (1) high shutter speed, (2) wide optical transmittance, and (3) high optical density in 'OFF'-state. If the shutter is applied to a diaphragm of video-camera, it could protect its sensor from intense lights. We have tested the basic characteristics of the PLZT electro-optical shutter and resolved power of imaging. The ratio of optical transmittance at 'ON' and 'OFF'-states was 1.1 X 103. The response time of the PLZT shutter from 'ON'-state to 'OFF'-state was 10 micro second. MTF reduction when putting the PLZT shutter in from of the visible video- camera lens has been observed only with 12 percent at a spatial frequency of 38 cycles/mm which are sensor resolution of the video-camera. Moreover, we took the visible image of the Si-CCD video-camera. The He-Ne laser ghost image was observed at 'ON'-state. On the contrary, the ghost image was totally shut out at 'OFF'-state. From these teste, it has been found that the PLZT shutter is useful for the diaphragm of the visible video-camera. The measured optical transmittance of PLZT wafer with no antireflection coating was 78 percent over the range from 2 to 6 microns.

Solid state electro-optic color filter and iris

NASA Technical Reports Server (NTRS)

1974-01-01

The electro-optic properties of lanthanum-modified lead zirconate titanate (PLZT) ferroelectric ceramic material are evaluated when utilized as a variable density and/or spectral filter in conjunction with a television scanning system. Emphasis was placed on the development of techniques and procedures for processing the PLZT disks and for applying efficient electrode structures. A number of samples were processed using different combinations of cleaning, electrode material, and deposition process. Best overall performance resulted from the direct evaporation of gold over chrome electrodes. A ruggedized mounting holder assembly was designed, fabricated, and tested. The assembly provides electrical contacts, high voltage protection, and support for the fragile PLZT disk, and permits mounting and optical alignment of the associated polarizers. Operational measurements of a PLZT sample mounted in the holder assembly were performed in conjunction with a television camera and the associated drive circuits. The data verified achievement of the elimination of the observed white-line effect.

Integration of PLZT and BST family oxides with GaN[Lead Lanthanum Zirconate Titanate, Barium Strontium Titanate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Osinsky, A.V.; Fuflyigin, V.N.; Wang, F.

2000-07-01

Recent advances in the processing of complex-oxide materials has allowed the authors to monolithically grow ferroelectrics of lead lanthanum zirconate titanate (PLZT) and barium strontium titanate (BST) systems on a GaN/sapphire structure. High quality films of PLZT and BST were grown on GaN/c-Al{sub 2}O{sub 3} in a thickness range of 0.3--5 {micro}m by a sol-gel technique. Field-induced birefringence, as large as 0.02, was measured from a PLZT layer grown on a buffered GaN/sapphire structure. UV illumination was found to result in more symmetrical electrooptic hysteresis loop. BST films on GaN demonstrated a low frequency dielectric constant of up to 800more » with leakage current density as low as 5.5 {center_dot} 10{sup {minus}8} A/cm{sup 2}.« less

Scalable Active Optical Access Network Using Variable High-Speed PLZT Optical Switch/Splitter

NASA Astrophysics Data System (ADS)

Ashizawa, Kunitaka; Sato, Takehiro; Tokuhashi, Kazumasa; Ishii, Daisuke; Okamoto, Satoru; Yamanaka, Naoaki; Oki, Eiji

This paper proposes a scalable active optical access network using high-speed Plumbum Lanthanum Zirconate Titanate (PLZT) optical switch/splitter. The Active Optical Network, called ActiON, using PLZT switching technology has been presented to increase the number of subscribers and the maximum transmission distance, compared to the Passive Optical Network (PON). ActiON supports the multicast slot allocation realized by running the PLZT switch elements in the splitter mode, which forces the switch to behave as an optical splitter. However, the previous ActiON creates a tradeoff between the network scalability and the power loss experienced by the optical signal to each user. It does not use the optical power efficiently because the optical power is simply divided into 0.5 to 0.5 without considering transmission distance from OLT to each ONU. The proposed network adopts PLZT switch elements in the variable splitter mode, which controls the split ratio of the optical power considering the transmission distance from OLT to each ONU, in addition to PLZT switch elements in existing two modes, the switching mode and the splitter mode. The proposed network introduces the flexible multicast slot allocation according to the transmission distance from OLT to each user and the number of required users using three modes, while keeping the advantages of ActiON, which are to support scalable and secure access services. Numerical results show that the proposed network dramatically reduces the required number of slots and supports high bandwidth efficiency services and extends the coverage of access network, compared to the previous ActiON, and the required computation time for selecting multicast users is less than 30msec, which is acceptable for on-demand broadcast services.

Effect of trivalent iron substitution on structure and properties of PLZT ceramics

NASA Astrophysics Data System (ADS)

Dutta, S.; Choudhary, R. N. P.

2008-02-01

Polycrystalline samples of Fe-modified PLZT (lead lanthanum zirconate titanate) are prepared by a mixed-oxide reaction technique. The formation of the compound has been confirmed by X-ray powder diffraction studies. The unit cell structure of the material has been found to be rhombohedral. Fourier-transform infrared reflection (FTIR) spectra have been recorded to correspond the structural changes associated with the phase formation. The effects of Fe concentration on the microstructure and dielectric constant of PLZT materials have been investigated. The ferroelectric phase transition of PLFZT materials is studied using dielectric measurements, which shows a shift in the transition temperature towards the higher-temperature side with increased Fe ion concentration. The piezoelectric constants of this system are investigated by the same way of changed contents of Fe ion in the main PLZT compound. The optimum values of Qm, kp, and d33 are 73, 0.32 and 406. The electrical conductivity increases with the increase in Fe ion concentration.

Ferroelectric PLZT thick films grown by poly(1-vinylpyrrolidone-co-vinyl acetate) (PVP/VA)-modified sol-gel process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Zhongqiang; Ma, Beihai; Li, Meiya

2016-03-01

We report the growth of ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) thick films using a poly(1-vinylpyrrolidone-co-vinyl acetate) (PVP/VA)-modified sol–gel process. A per-coating thickness of ≈0.66 μm has been demonstrated using PVP/VA-modified solution, which is more than doubled that of the PLZT films grown by PVP-modified method, and nearly 6 times the per-coating thickness of films prepared by conventional sol–gel process. PLZT thick films grown on LNO/Ni substrates exhibited denser microstructure, higher remanent polarization (11 μC/cm 2) and dielectric tunability (45%), lower leakage current density (≈1.2 × 10 -8 A/cm 2), and higher breakdown strength (≈1.6 MV/cm) than those for the samples grown onmore » PtSi substrates. These results demonstrated great potential of using PVP/VA-modified sol–gel process for high power film capacitor applications.« less

Light-Driven Polymeric Bimorph Actuators

NASA Technical Reports Server (NTRS)

Adamovsky, Gregory; Sarkisov, Sergey S.; Curley, Michael J.

2009-01-01

Light-driven polymeric bimorph actuators are being developed as alternatives to prior electrically and optically driven actuators in advanced, highly miniaturized devices and systems exemplified by microelectromechanical systems (MEMS), micro-electro-optical-mechanical systems (MEOMS), and sensor and actuator arrays in smart structures. These light-driven polymeric bimorph actuators are intended to satisfy a need for actuators that (1) in comparison with the prior actuators, are simpler and less power-hungry; (2) can be driven by low-power visible or mid-infrared light delivered through conventional optic fibers; and (3) are suitable for integration with optical sensors and multiple actuators of the same or different type. The immediate predecessors of the present light-driven polymeric bimorph actuators are bimorph actuators that exploit a photorestrictive effect in lead lanthanum zirconate titanate (PLZT) ceramics. The disadvantages of the PLZT-based actuators are that (1) it is difficult to shape the PLZT ceramics, which are hard and brittle; (2) for actuation, it is necessary to use ultraviolet light (wavelengths < 380 nm), which must be generated by use of high-power, high-pressure arc lamps or lasers; (3) it is difficult to deliver sufficient ultraviolet light through conventional optical fibers because of significant losses in the fibers; (4) the response times of the PLZT actuators are of the order of several seconds unacceptably long for typical applications; and (5) the maximum mechanical displacements of the PLZT-based actuators are limited to those characterized by low strains beyond which PLZT ceramics disintegrate because of their brittleness. The basic element of a light-driven bimorph actuator of the present developmental type is a cantilever beam comprising two layers, at least one of which is a polymer that exhibits a photomechanical effect (see figure). The dominant mechanism of the photomechanical effect is a photothermal one: absorption of light energy causes heating, which, in turn, causes thermal expansion.

Optical properties of Er 3+/Yb 3+-codoped transparent PLZT ceramic

NASA Astrophysics Data System (ADS)

Zheng, Zhiqiang; Li, Xiaoyan; Liu, Jing; Feng, Zhuohong; Li, Baozeng; Yang, Jiwen; Li, Kewen; Jiang, Hua; Chen, Xuesheng; Xie, Jianping; Ming, Hai

2008-01-01

Optical absorption and emission spectra of Er 3+/Yb 3+ ions in PLZT (Pb 1-xLa xZr yTi 1-yO 3) ceramic have been studied. Based on the Judd-Ofelt (J-O) theory, the J-O intensity parameters were calculated to be Ω2=2.021×10 -20 cm 2, Ω4=0.423×10 -20 cm 2, Ω6=0.051×10 -20 cm 2 from the absorption spectrum of Er 3+/Yb 3+-codoped PLZT. The J-O intensity parameters have been used to calculate the radiative lifetimes and the branching ratios for some excited 4I 13/2, 4I 11/2, 4I 9/24F 9/2, and 4S 3/2 levels of Er 3+ ion. The stimulated emission cross-section (8.24×10 -21 cm 2) was evaluated for the 4I 13/2→ 4I 15/2 transition of Er 3+. The upconversion emissions at 538, 564, and 666 nm have been observed in Er 3+/Yb 3+-codoped PLZT by exciting at 980 nm, and their origins were identified and analyzed.

Positron annihilation studies of vacancy related defects in ceramic and thin film Pb(Zr,Ti)O3 materials

NASA Astrophysics Data System (ADS)

Keeble, D. J.; Krishnan, A.; Umlor, M. T.; Lynn, K. G.; Warren, W. L.; Dimos, D.; Tuttle, B. A.

Preliminary positron annihilation studies of ceramic and thin film Pb(Zr,Ti)O3 (PZT) materials have been completed. This paper examines effects of processing conditions on vacancy related defects. Positron lifetime measurements on bulk PLZT plates showed an increase in positron trapping to a defect state with increasing grain size consistent with trapping to lead vacancy related defects formed through lead oxide loss during processing. Variable energy positron beam measurements were completed on bulk PLZT plates, sol-gel PZT thin films, and laser ablated PLZT thin films. Films processed in a reduced oxygen atmosphere were found to give a higher S-parameter, due to an increase in concentration of neutral or negatively charged vacancy type defects, compared with material processed in an oxidizing ambient.

Effect of La and W dopants on dielectric and ferroelectric properties of PZT thin films prepared by sol-gel process

NASA Astrophysics Data System (ADS)

Xiao, Mi; Zhang, Zebin; Zhang, Weikang; Zhang, Ping

2018-01-01

La or W-doped lead zirconate titanate thin films (PLZT or PZTW) were prepared on platinized silicon substrates by sol-gel process. The effects of La or W dopant on the phase development, microstructure, dielectric and ferroelectric characteristics of films were studied. For PLZT films, the optimum doping concentration was found to be 2 mol%. While for PZTW films, the dielectric and ferroelectric properties were found to be improved as the doping concentration increased. The fatigue properties of PLZT and PZTW thin films were also investigated, the results showed that A- or B-site donor doping could improve the fatigue properties of PZT thin films. The theory of oxygen vacancy was used to explain the performance improvement caused by donor doping.

Electro-optic study of PZT ferroelectric ceramics using modulation of reflected light

NASA Astrophysics Data System (ADS)

Kniazkov, A. V.

2016-04-01

Electro-optic coefficients of variations in the refractive index of PZT and PLZT ceramic materials induced by ac electric field are estimated using modulation of reflected light. The electro-optic coefficients of PLZT ceramics measured with the aid of conventional birefringence using the phase shift of transmitted radiation and the proposed method of birefringence using the modulation of reflected light are compared.

Updated optical read/write memory system components

NASA Technical Reports Server (NTRS)

1974-01-01

A survey of the building blocks of the electro-optic read/write system was made. Critical areas and alternate paths are discussed. The latest PLZT block data composer is analyzed. Stricter controls in the production and fabrication of PLZT are implied by the performance of the BDC. A reverse charge before erase has eliminated several problems observed in the parallel plane charging process for photoconductor-thermoplastic hologram storage.

Compositional Effects on Electromechanical Degradation of RAINBOW Actuators

NASA Technical Reports Server (NTRS)

Dausch, David E.; Wise, Stephanie A.

1998-01-01

The effect of ceramic composition on the electromechanical displacement degradation of RAINBOW (Reduced and Internally Biased Oxide Wafer) actuators was investigated. RAINBOWs were fabricated from commercially available PZT-5H and PZT-5A piezoelectric disks as well as from tape cast PLZT piezoelectric 7/65/35 and electrostrictive 9/65/35 compositions. Displacement properties were measured at low electric fields (10 to 13 kV/cm) under loads of 0 to 500 g, and displacement degradation as a function of time was observed over 107 cycles. The PZT-5A and PLZT 9/65/35 compositions exhibited minimal decrease in displacement when load was applied. Furthermore, these compositions retained approximately 65 percent of their initial displacement after 10(exp 7) cycles under a load of 300 g. PZT-5H and PLZT 7/65/35 degraded completely under these conditions.

Thinning of PLZT ceramic wafers for sensor integration

NASA Astrophysics Data System (ADS)

Jin, Na; Liu, Weiguo

2010-08-01

Characteristics of transparent PLZT ceramics can be tailored by controlling the component of them, and therefore showed excellent dielectric, piezoelectric, pyroelectric and ferroelectric properties. To integrate the ceramics with microelectronic circuit to realize integrated applications, the ceramic wafers have to be thinned down to micrometer scale in thickness. A7/65/35 PLZT ceramic wafer was selected in this study for the thinning process. Size of the wafer was 10×10mm with an initial thickness of 300μm. A novel membrane transfer process (MTP) was developed for the thinning and integration of the ceramic wafers. In the MTP process, the ceramic wafer was bonded to silicon wafer using a polymer bonding method. Mechanical grinding method was applied to reduce the thickness of the ceramic. To minimize the surface damage in the ceramic wafer caused by the mechanical grinding, magnetorheological finishing (MRF) method was utilized to polish the wafer. White light interference (WLI) apparatus was used to monitor the surface qualities of the grinded and ploished ceramic wafers. For the PLZT membrane obtained from the MTP process, the final thickness of the thinned and polished wafer was 10μm, the surface roughness was below 1nm in rms, and the flatness was better than λ/5.

Fabrication and electrical properties of a (Pb,La)(Zr,Ti)O3 capacitor with pulsed laser deposited Sn-doped In2O3 bottom electrode on Al2O3(0001)

NASA Astrophysics Data System (ADS)

Takada, Yoko; Tamano, Rika; Okamoto, Naoki; Saito, Takeyasu; Yoshimura, Takeshi; Fujimura, Norifumi; Higuchi, Koji; Kitajima, Akira

2017-07-01

A Sn-doped In2O3 (ITO) electrode was deposited on Al2O3(0001) using pulsed laser deposition at different oxygen pressures to create the bottom electrode of a (Pb,La)(Zr,Ti)O3 (PLZT) capacitor. The crystallographic orientation of the ITO films was controlled via the oxygen pressure. At 600 °C the (111) peak became dominant when the O2 pressure was increased, and when the pressure reached 2.0 Pa the ITO films became preferentially (111) oriented. The remnant polarization was 58.8-90.7 and 46.0-47.5 µC/cm2 for the Pt/PLZT/ITO and ITO/PLZT/ITO capacitors, respectively; the ferroelectric properties of these capacitors were also determined.

A mathematical model for predicting photo-induced voltage and photostriction of PLZT with coupled multi-physics fields and its application

NASA Astrophysics Data System (ADS)

Huang, J. H.; Wang, X. J.; Wang, J.

2016-02-01

The primary purpose of this paper is to propose a mathematical model of PLZT ceramic with coupled multi-physics fields, e.g. thermal, electric, mechanical and light field. To this end, the coupling relationships of multi-physics fields and the mechanism of some effects resulting in the photostrictive effect are analyzed theoretically, based on which a mathematical model considering coupled multi-physics fields is established. According to the analysis and experimental results, the mathematical model can explain the hysteresis phenomenon and the variation trend of the photo-induced voltage very well and is in agreement with the experimental curves. In addition, the PLZT bimorph is applied as an energy transducer for a photovoltaic-electrostatic hybrid actuated micromirror, and the relation of the rotation angle and the photo-induced voltage is discussed based on the novel photostrictive mathematical model.

Nonlinear analysis of 0-3 polarized PLZT microplate based on the new modified couple stress theory

NASA Astrophysics Data System (ADS)

Wang, Liming; Zheng, Shijie

2018-02-01

In this study, based on the new modified couple stress theory, the size- dependent model for nonlinear bending analysis of a pure 0-3 polarized PLZT plate is developed for the first time. The equilibrium equations are derived from a variational formulation based on the potential energy principle and the new modified couple stress theory. The Galerkin method is adopted to derive the nonlinear algebraic equations from governing differential equations. And then the nonlinear algebraic equations are solved by using Newton-Raphson method. After simplification, the new model includes only a material length scale parameter. In addition, numerical examples are carried out to study the effect of material length scale parameter on the nonlinear bending of a simply supported pure 0-3 polarized PLZT plate subjected to light illumination and uniform distributed load. The results indicate the new model is able to capture the size effect and geometric nonlinearity.

Method of bistable optical information storage using antiferroelectric phase PLZT ceramics

DOEpatents

Land, Cecil E.

1990-01-01

A method for bistable storage of binary optical information includes an antiferroelectric (AFE) lead lanthanum zirconate titanate (PLZT) layer having a stable antiferroelectric first phase and a ferroelectric (FE) second phase obtained by applying a switching electric field across the surface of the device. Optical information is stored by illuminating selected portions of the layer to photoactivate an FE to AFE transition in those portions. Erasure of the stored information is obtained by reapplying the switching field.

Method of bistable optical information storage using antiferroelectric phase PLZT ceramics

DOEpatents

Land, C.E.

1990-07-31

A method for bistable storage of binary optical information includes an antiferroelectric (AFE) lead lanthanum zirconate titanate (PLZT) layer having a stable antiferroelectric first phase and a ferroelectric (FE) second phase obtained by applying a switching electric field across the surface of the device. Optical information is stored by illuminating selected portions of the layer to photoactivate an FE to AFE transition in those portions. Erasure of the stored information is obtained by reapplying the switching field. 8 figs.

Photoinduced charge carriers' accumulation and its impact on random lasing in Nd3+ doped (Pb,La)(Zr,Ti)O3 ceramics

NASA Astrophysics Data System (ADS)

Xu, Caixia; Zhang, Jingwen; Xu, Long; Ma, Xinyan; Zhao, Hua

2017-06-01

To pinpoint the driving forces behind the random lasing in Nd3+ doped lanthanum lead zirconate titanate (Nd:PLZT) ceramic plates, a combinatorial cavity with two gain media (Nd:YVO4 and Nd:PLZT) was used to study the switching feature between conventional lasing and random lasing oscillations. The complex laser output dynamics observed hinted that the photo-induced charge accumulation on the plate surface and the grain boundaries of Nd:PLZT is responsible for the lasing action switching, which was confirmed by a series of experiments, including strong electro-induced scattering, remarkable photoinduced currents, and light transmission reduction, along with measured single-pass-gain over the theoretical limit. It was found that the charge accumulation results in optical energy storage and nonuniform refractive index and hence strong scattering, which give rise to the random walks and weak localization of photons and long lasting lasing action and mode switching.

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures.

PubMed

Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G; Howe, Brandon M; Brown, Gail J; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X

2016-09-01

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices.

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

PubMed Central

Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G.; Howe, Brandon M.; Brown, Gail J.; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X.

2016-01-01

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices. PMID:27581071

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

NASA Astrophysics Data System (ADS)

Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G.; Howe, Brandon M.; Brown, Gail J.; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X.

2016-09-01

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices.

Preliminary investigation of an active PLZT lens

NASA Astrophysics Data System (ADS)

Peters, Bruce R.; Reardon, Patrick J.; Wong, K. J.

2001-05-01

The design analysis and preliminary testing of a prototype AFOCL is described. The AFOCL is an active optical component composed of solid state lead lanthanum-modified zirconate titanate (PLZT) ferroelectric ceramic with patterned indium tin oxide (ITO) transparent surface electrodes that modulate the refractive index of the PLZT to function as an electro- optic lens. The AFOCL was developed to perform optical re- alignment and wavefront correction to enhance the performance of Ultra-Lightweight Structures and Space Observatories. The AFOCL would be an active optical component within a larger optical system. Information from a wavefront sensor would be processed to provide input to the AFOCL to drive the sense4d wavefront tot he desired shape and location. While offering variable and rapid focusing capability similar to liquid crystal based spatial light modulators, the AFOCL offers some potential advantages because it is a solid-stat, stationary, low-mass, rugged, and thin optical element that can produce wavefront quality comparable to the solid refractive lens it replaces. The AFOCL acts as a positive or negative lens by producing a parabolic phase-shift in the PLZT material through the application of a controlled voltage potential across the ITO electrodes. To demonstrate the technology, a 4 mm diameter lens was fabricated to produce 5-waves of optical power operating at 2.051 micrometers wavelength. Optical metrology was performed on the device to measure focal length, optical quality, and efficiency for a variety of test configurations. Preliminary data was analyzed and compared to idealized performance available from computer-based models of the AFOCL.

Preliminary Investigation of an Active PLZT Lens

NASA Technical Reports Server (NTRS)

Lightsey, W. D.; Peters, B. R.; Reardon, P. J.; Wong, J. K.

2001-01-01

The design, analysis and preliminary testing of a prototype Adjustable Focus Optical Correction Lens (AFOCL) is described. The AFOCL is an active optical component composed of solid state lead lanthanum-modified zirconate titanate (PLZT) ferroelectric ceramic with patterned indium tin oxide (ITO) transparent surface electrodes that modulate the refractive index of the PLZT to function as an electro-optic lens. The AFOCL was developed to perform optical re-alignment and wavefront correction to enhance the performance of Ultra-Lightweight Structures and Space Observatories (ULSSO). The AFOCL has potential application as an active optical component within a larger optical system. As such, information from a wavefront sensor would be processed to provide input to the AFOCL to drive the sensed wavefront to the desired shape and location. While offering variable and rapid focussing capability (controlled wavefront manipulation) similar to liquid crystal based spatial light modulators (SLM), the AFOCL offers some potential advantages because it is a solid-state, stationary, low-mass, rugged, and thin optical element that can produce wavefront quality comparable to the solid refractive lens it replaces. The AFOCL acts as a positive or negative lens by producing a parabolic phase-shift in the PLZT material through the application of a controlled voltage potential across the ITO electrodes. To demonstrate the technology, a 4 mm diameter lens was fabricated to produce 5-waves of optical power operating at 2.051 micrometer wavelength. Optical metrology was performed on the device to measure focal length, optical quality, and efficiency for a variety of test configurations. The data was analyzed and compared to theoretical data available from computer-based models of the AFOCL.

Effect of dead layer and strain on diffuse phase transition of PLZT relaxor thin films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tong, S.; Narayanan, M.; Ma, B.

2011-02-01

Bulk relaxor ferroelectrics exhibit excellent permittivity compared to their thin film counterpart, although both show diffuse phase transition (DPT) behavior unlike normal ferroelectrics. To better understand the effect of dead layer and strain on the observed anomaly in the dielectric properties, we have developed relaxor PLZT (lead lanthanum zirconate titanate) thin films with different thicknesses and measured their dielectric properties as a function of temperature and frequency. The effect of dead layer on thin film permittivity has been found to be independent of temperature and frequency, and is governed by the Schottky barrier between the platinum electrode and PLZT. Themore » total strain (thermal and intrinsic) in the film majorly determines the broadening, dielectric peak and temperature shift in the relaxor ferroelectric. The Curie-Weiss type law for relaxors has been further modified to incorporate these two effects to accurately predict the DPT behavior of thin film and bulk relaxor ferroelectrics. The dielectric behavior of thin film is predicted by using the bulk dielectric data from literature in the proposed equation, which agree well with the measured dielectric behavior.« less

Application Of Light Valves For Continuous-Tone Printing

NASA Astrophysics Data System (ADS)

Vergona, Albert B.

1989-07-01

New opportunities are emerging in the graphic-arts pre-press market stimulated by the need for digitally created images. To meet this need, we have designed a cost-effective three-color digital printer using PLZT light valves. Transparent lead lanthanum zirconate titanate (PLZT) ceramic crystals when used as a linear modulator offer a number of significant benefits. The primary advantage is that the light valve is an efficient modulator of incoherent light providing a broad spectral output ranging from 400nm to well into the infrared region. In addition, light valves offer the advantages of being small, low cost, have a wide dynamic range (>1000 to 1), and can be used with simple optical designs. The characteristics of the PLZT material plays an important role in the performance of the light valve. A number of variables such as ceramic composition, electrode spacing, and ceramic thickness can be altered to affect its quadratic electrooptic behavior. Additionally, the modulator design requires a closed-loop servo to eliminate the errors caused by the device's remanent polarization and nonlinear behavior.

Thin-film decoupling capacitors for multi-chip modules

NASA Astrophysics Data System (ADS)

Dimos, D.; Lockwood, S. J.; Schwartz, R. W.; Rogers, M. S.

Thin-film decoupling capacitors based on ferroelectric lead lanthanum zirconate titanate (PLZT) films are being developed for use in advanced packages, such as multi-chip modules. These thin-film decoupling capacitors are intended to replace multi-layer ceramic capacitors for certain applications, since they can be more fully integrated into the packaging architecture. The increased integration that can be achieved should lead to decreased package volume and improved high-speed performance, due to a decrease in interconnect inductance. PLZT films are fabricated by spin coating using metal carboxylate/alkoxide solutions. These films exhibit very high dielectric constants ((var epsilon) greater than or equal to 900), low dielectric losses (tan(delta) = 0.01), excellent insulation resistances (rho greater than 10(exp 13) (Omega)-cm at 125 C), and good breakdown field strengths (E(sub B) = 900 kV/cm). For integrated circuit applications, the PLZT dielectric is less than 1 micron thick, which results in a large capacitance/area (8-9 nF/sq mm). The thin-film geometry and processing conditions also make these capacitors suitable for direct incorporation onto integrated circuits and for packages that require embedded components.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balachandran, U.

The purpose of this CRADA is to develop a fabrication process to reduce the manufacturing cost for a very compact, high temperature, film-on-foil high energy-density PLZT (Pb-La-Zr- Ti-O) capacitor. Motivation for this CRADA is derived from the DOE’s Office of Vehicle Technologies (OVT) program, which seeks to advance technologies to improve vehicle fuel efficiency in the mid-term and facilitate the transition to electric drive vehicles over the longterm. The objective of Argonne’s work is to develop and characterize high-performance capacitors on base-metal foils. The PLZT film-on-foil prepared using a spin-coating technique

Influence of crystal phases on electro-optic properties of epitaxially grown lanthanum-modified lead zirconate titanate films

NASA Astrophysics Data System (ADS)

Masuda, Shin; Seki, Atsushi; Masuda, Yoichiro

2010-02-01

We describe here how we have improved the crystal qualities and controlled the crystal phase of the lanthanum-modified lead zirconate titanate (PLZT) film without changing the composition ratio using an oxygen-pressure crystallization process. A PLZT film deposited on a SrTiO3 substrate with the largest electro-optic (EO) coefficient of 498 pm/V has been achieved by controlling the crystal phase of the film. Additionally, a fatigue-free lead zirconate titanate (PZT) capacitor with platinum electrodes has been realized by reducing the oxygen vacancies in the films.

Method and apparatus for bistable optical information storage for erasable optical disks

DOEpatents

Land, Cecil E.; McKinney, Ira D.

1990-01-01

A method and an optical device for bistable storage of optical information, together with reading and erasure of the optical information, using a photoactivated shift in a field dependent phase transition between a metastable or a bias-stabilized ferroelectric (FE) phase and a stable antiferroelectric (AFE) phase in an lead lanthanum zirconate titanate (PLZT). An optical disk contains the PLZT. Writing and erasing of optical information can be accomplished by a light beam normal to the disk. Reading of optical information can be accomplished by a light beam at an incidence angle of 15 to 60 degrees to the normal of the disk.

Method and apparatus for bistable optical information storage for erasable optical disks

DOEpatents

Land, C.E.; McKinney, I.D.

1988-05-31

A method and an optical device for bistable storage of optical information, together with reading and erasure of the optical information, using a photoactivated shift in a field dependent phase transition between a metastable or a bias-stabilized ferroelectric (FE) phase and a stable antiferroelectric (AFE) phase in a lead lanthanum zirconate titanate (PLZT). An optical disk contains the PLZT. Writing and erasing of optical information can be accomplished by a light beam normal to the disk. Reading of optical information can be accomplished by a light beam at an incidence angle of 15 to 60 degrees to the normal of the disk. 10 figs.

Estimation of stereovision in conditions of blurring simulation

NASA Astrophysics Data System (ADS)

Krumina, Gunta; Ozolinsh, Maris; Lacis, Ivazs; Lyakhovetskii, Vsevolod

2005-08-01

The aim of this study was to evaluate the simulation of eye pathologies, such as amblyopia and cataracts, to estimate the stereovision in artificial conditions, and to compare the results on the stereothreshold obtained in artificial and real- pathologic conditions. Characteristic of the above-mentioned real-life forms of a reduced vision is a blurred image in one of the eyes. The blurring was simulated by (i) defocusing, (ii) blurred stimuli on the screen, and (iii) occluding of an eye with PLZT or PDLC plates. When comparing the methods, two parameters were used: the subject's visual acuity and the modulation depth of the image. The eye occluder method appeared to systematically provide higher stereothreshold values than the rest of the methods. The PLZT and PDLC plates scattered more in the blue and decreased the contrast of the stimuli when the blurring degree was increased. In the eye occluder method, the stereothreshold increased faster than in the defocusation and monitor stimuli methods when the visual acuity difference was higher than 0.4. It has been shown that the PLZT and PDLC plates are good optical phantoms for the simulation of a cataract, while the defocusation and monitor stimuli methods are more suitable for amblyopia.

Properties of PZT-Based Piezoelectric Ceramics Between -150 and 250 C

NASA Technical Reports Server (NTRS)

Hooker, Matthew W.

1998-01-01

The properties of three PZT-based piezoelectric ceramics and one PLZT electrostrictive ceramic were measured as a function of temperature. In this work, the dielectric, ferroelectric polarization versus electric field, and piezoelectric properties of PZT-4, PZT-5A, PZT-5H, and PLZT-9/65/35 were measured over a temperature range of -150 to 250 C. In addition to these measurements, the relative thermal expansion of each composition was measured from 25 to 600 C and the modulus of rupture of each material was measured at room temperature. This report describes the experimental results and compares and contrasts the properties of these materials with respect to their applicability to intelligent aerospace systems.

Adjustable Focus Optical Correction Lens (AFOCL)

NASA Technical Reports Server (NTRS)

Peters, Bruce R.

2001-01-01

This report describes the activities and accomplishments along with the status of the characterization of a PLZT-based Adjustable Focus Optical Correction Lens (AFOCL) test device. The activities described in this report were undertaken by members of the Center for Applied Optics (CAO) at the University of Alabama in Huntsville (UAH) under NASA Contract NAS8-00188. The effort was led by Dr. Bruce Peters as the Principal Investigator and supported by Dr. Patrick Reardon, Ms. Deborah Bailey, and graduate student Mr. Jeremy Wong. The activities outlined for the first year of the contract were to identify vendors and procure a test device along with performing the initial optical characterization of the test device. This activity has been successfully executed and test results are available and preliminary information was published at the SPIE Photonics West Conference in San Jose, January 2001. The paper, "Preliminary investigation of an active PLZT lens," was well received and generated response with several questions from the audience. A PLZT test device has been commercially procured from an outside vendor: The University of California in San Diego (UCSD) in partnership with New Interconnect Packaging Technologies (NIPT) Inc. The device has been subjected to several tests to characterize the optical performance of the device at wavelengths of interest. The goal was to evaluate the AFOCL similar to a conventional lens and measure any optical aberrations present due to the PLZT material as a deviation in the size of the diffraction limited spot (blur), the presence of diffracted energy into higher orders surrounding the focused spot (a variation in Strehl), and/or a variation or spread in the location of the focused energy away from the optical axis (a bias towards optical wedge, spherical, comma, or other higher order aberrations). While data has been collected indicative of the imaging quality of the AFOCL test device, it was not possible to fully characterize the optical performance of the AFOCL alone because there were significant optical distortions due to fabrication related issues.

Ultra Uniform Pb0.865La0.09(Zr0.65Ti0.35)O3 Thin Films with Tunable Optical Properties Fabricated via Pulsed Laser Deposition

PubMed Central

Jiang, Shenglin; Huang, Chi; Gu, Honggang; Liu, Shiyuan; Zhu, Shuai; Li, Ming-Yu; Yao, Lingmin; Wu, Yunyi; Zhang, Guangzu

2018-01-01

Ferroelectric thin films have been utilized in a wide range of electronic and optical applications, in which their morphologies and properties can be inherently tuned by a qualitative control during growth. In this work, we demonstrate the evolution of the Pb0.865La0.09(Zr0.65Ti0.35)O3 (PLZT) thin films on MgO (200) with high uniformity and optimized optical property via the controls of the deposition temperatures and oxygen pressures. The perovskite phase can only be obtained at the deposition temperature above 700 °C and oxygen pressure over 50 Pa due to the improved crystallinity. Meanwhile, the surface morphologies gradually become smooth and compact owing to spontaneously increased nucleation sites with the elevated temperatures, and the crystallization of PLZT thin films also sensitively respond to the oxygen vacancies with the variation of oxygen pressures. Correspondingly, the refractive indices gradually develop with variations of the deposition temperatures and oxygen pressures resulted from the various slight loss, and the extinction coefficient for each sample is similarly near to zero due to the relatively smooth morphology. The resulting PLZT thin films exhibit the ferroelectricity, and the dielectric constant sensitively varies as a function of electric filed, which can be potentially applied in the electronic and optical applications. PMID:29596398

PZT/PLZT - elastomer composites with improved piezoelectric voltage coefficient

NASA Astrophysics Data System (ADS)

Harikrishnan, K.; Bavbande, D. V.; Mohan, Dhirendra; Manoharan, B.; Prasad, M. R. S.; Kalyanakrishnan, G.

2018-02-01

Lead Zirconate Titanate (PZT) and Lanthanum-modified Lead Zirconate Titanate (PLZT) ceramic sensor materials are widely used because of their excellent piezoelectric coefficients. These materials are brittle, high density and have low achievable piezoelectric voltage coefficients. The density of the sintered ceramics shall be reduced by burnable polymeric sponge method. The achievable porosity level in this case is nearly 60 - 90%. However, the porous ceramic structure with 3-3 connectivity produced by this method is very fragile in nature. The strength of the porous structure is improved with Sylgard®-184 (silicone elastomer) by vacuum impregnation method maintaining the dynamic vacuum level in the range of -650 mm Hg. The elastomer Sylgard®-184 is having low density, low dielectric constant and high compliance (as a resultant stiffness of the composites is increased). To obtain a net dipole moment, the impregnated ceramic composites were subjected to poling treatment with varying conditions of D.C. field and temperature. The properties of the poled PZT/PLZT - elastomer composites were characterized with LCR meter for measuring the dielectric constant values (k), d33 meter used for measuring piezo-electric charge coefficient values (d33) and piezo-electric voltage coefficient (g33) values which were derived from d33 values. The voltage coefficient (g33) values of these composites are increased by 10 fold as compared to the conventional solid ceramics demonstrates that it is possible to fabricate a conformable detector.

Frequency Invariability of (Pb,La)(Zr,Ti)O₃ Antiferroelectric Thick-Film Micro-Cantilevers.

PubMed

An, Kun; Jin, Xuechen; Meng, Jiang; Li, Xiao; Ren, Yifeng

2018-05-13

Micro-electromechanical systems comprising antiferroelectric layers can offer both actuation and transduction to integrated technologies. Micro-cantilevers based on the (Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O₃ (PLZT) antiferroelectric thick film are fabricated by the micro-nano manufacturing process, to utilize the effect of phase transition induced strain and sharp phase switch of antiferroelectric materials. When micro-cantilevers made of antiferroelectric thick films were driven by sweep voltages, there were two resonant peaks corresponding to the natural frequency shift from 27.8 to 27.0 kHz, before and after phase transition. This is the compensation principle for the PLZT micro-cantilever to tune the natural frequency by the amplitude modulation of driving voltage, rather than of frequency modulation. Considering the natural frequency shift about 0.8 kHz and the frequency tuning ability about 156 Hz/V before the phase transition, this can compensate the frequency shift caused by increasing temperature by tuning only the amplitude of driving voltage, when the ultrasonic micro-transducer made of antiferroelectric thick films works for such a long period. Therefore, antiferroelectric thick films with hetero-structures incorporated into PLZT micro-cantilevers not only require a lower driving voltage (no more than 40 V) than rival bulk piezoelectric ceramics, but also exhibit better performance of frequency invariability, based on the amplitude modulation.

Stoichiometry determination of (Pb,La)(Zr,Ti)O3-type nano-crystalline ferroelectric ceramics by wavelength-dispersive X-ray fluorescence spectrometry.

PubMed

Sitko, Rafał; Zawisza, Beata; Kita, Andrzej; Płońska, Małgorzata

2006-07-01

Analysis of small samples of lanthanum-doped lead zirconate titanate (PLZT) by wavelength-dispersive X-ray fluorescence spectrometry (WDXRF) is presented. The powdered material in ca. 30 mg was suspended in water and collected on the membrane filter. The pure oxide standards (PbO, La2O3, ZrO2 and TiO2) were used for calibration. The matrix effects were corrected using a theoretical influence coefficients algorithm for intermediate-thickness specimens. The results from XRF method were compared with the results from the inductively coupled plasma optical emission spectrometry (ICP-OES). Agreement between XRF and ICP-OES analysis was satisfactory and indicates the usefulness of XRF method for stoichiometry determination of PLZT.

Solid state electro-optic color filter and iris

NASA Technical Reports Server (NTRS)

1975-01-01

A pair of solid state electro-optic filters (SSEF) in a binocular holder were designed and fabricated for evaluation of field sequential stereo TV applications. The electronic circuitry for use with the stereo goggles was designed and fabricated, requiring only an external video input. A polarizing screen suitable for attachment to various size TV monitors for use in conjunction with the stereo goggles was designed and fabricated. An improved engineering model 2 filter was fabricated using the bonded holder technique developed previously and integrated to a GCTA color TV camera. An engineering model color filter was fabricated and assembled using PLZT control elements. In addition, a ruggedized holder assembly was designed, fabricated and tested. This assembly provides electrical contacts, high voltage protection, and support for the fragile PLZT disk, and also permits mounting and optical alignment of the associated polarizers.

Electrical characteristics of paraelectric lead lanthanum zirconium titanate thin films for dynamic random access memory applications

NASA Astrophysics Data System (ADS)

Jones, R. E., Jr.; Maniar, P. D.; Olowolafe, J. O.; Campbell, A. C.; Mogab, C. J.

1992-02-01

Paraelectric lead lanthanum zirconium titanate (PLZT) films, 150 nm thick, were deposited using a spin-coat, sol-gel process followed by a 650 °C oxygen anneal. X-ray diffraction indicated complete conversion to the perovskite phase. Sputter-deposited platinum electrodes were employed with the PLZT films to form thin-film capacitors with the best combination of high charge storage density (26.1 μC/cm2 at 3 V and 36.4 μC/cm2 at 5 V) and leakage current density (0.2 μA/cm2 at 3 V and 0.5 μA/cm2 at 5 V ) reported to date. The electrical characteristics of these thin-film capacitors meet the requirements for a planar bit cell capacitor for 64-Mbit dynamic random access memories.

Ultra-thin multilayer capacitors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Renk, Timothy Jerome; Monson, Todd C.

2009-06-01

The fabrication of ultra-thin lanthanum-doped lead zirconium titanate (PLZT) multilayer ceramic capacitors (MLCCs) using a high-power pulsed ion beam was studied. The deposition experiments were conducted on the RHEPP-1 facility at Sandia National Laboratories. The goal of this work was to increase the energy density of ceramic capacitors through the formation of a multilayer device with excellent materials properties, dielectric constant, and standoff voltage. For successful device construction, there are a number of challenging requirements including achieving correct stoichiometric and crystallographic composition of the deposited PLZT, as well as the creation of a defect free homogenous film. This report detailsmore » some success in satisfying these requirements, although 900 C temperatures were necessary for PLZT perovskite phase formation. These temperatures were applied to a previously deposited multi-layer film which was then post-annealed to this temperature. The film exhibited mechanical distress attributable to differences in the coefficient of thermal expansion (CTE) of the various layers. This caused significant defects in the deposited films that led to shorts across devices. A follow-on single layer deposition without post-anneal produced smooth layers with good interface behavior, but without the perovskite phase formation. These issues will need to be addressed in order for ion beam deposited MLCCs to become a viable technology. It is possible that future in-situ heating during deposition may address both the CTE issue, and result in lowered processing temperatures, which in turn could raise the probability of successful MLCC formation.« less

PLZT Electrooptic Ceramic Photonic Devices for Surface-Normal Operation in Trenches Cut Across Arrays of Optical Fiber

NASA Astrophysics Data System (ADS)

Hirabayashi, Katsuhiko

2005-03-01

Simple Pb_1-x La_x(Zr_y Ti_z)_1-x/4 O3 (PLZT) electrooptic ceramic photonic device arrays for surface-normal operation have been developed for application to polarization-controller arrays and Fabry-Pérot tunable filter arrays. These arrays are inserted in trenches cut across fiber arrays. Each element of the arrayed structure corresponds to one optical beam and takes the form of a cell. Each sidewall of the cell (width: 50-80 μm) is coated to form an electrode. The arrays have 16 elements at a pitch of 250 μm. The phase modulator has about 1 dB of loss and a half-wavelength voltage of 120 V. A cascade of two PLZT phase modulators (thickness: 300 μm), with each attached to a polyimide lambda/2 plate (thickness:15 μm), is capable of converting an arbitrary polarization to the transverse-electric (TE) or transverse-magnetic (TM) polarization. The response time is 1 μs. The Fabry-Pérot tunable filters have a thickness of 50 μm . The front and back surfaces of each cell are coated by 99%-reflective mirror. The free spectral range (FSR) of the filters is about 10 nm, tunable range is about 10 nm, loss is 2.2 dB, and finesse is 150. The tuning speed of these devices is high, taking only 1 μs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melo, M.; Araújo, E. B., E-mail: eudes@dfq.feis.unesp.br; Shvartsman, V. V.

Polycrystalline lanthanum lead zirconate titanate (PLZT) thin films were deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates to study the effects of the thickness and grain size on their structural and piezoresponse properties at nanoscale. Thinner PLZT films show a slight (100)-orientation tendency that tends to random orientation for the thicker film, while microstrain and crystallite size increases almost linearly with increasing thickness. Piezoresponse force microscopy and autocorrelation function technique were used to demonstrate the existence of local self-polarization effect and to study the thickness dependence of correlation length. The obtained results ruled out the bulk mechanisms and suggest that Schottky barriersmore » near the film-substrate are likely responsible for a build-in electric field in the films. Larger correlation length evidence that this build-in field increases the number of coexisting polarization directions in larger grains leading to an alignment of macrodomains in thinner films.« less

Refining the phase diagram of Pb{sub 1−x}La{sub x}(Zr{sub 0.9}Ti{sub 0.1}){sub 1−x/4}O{sub 3} ceramics by structural, dielectric, and anelastic spectroscopy investigations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Craciun, F., E-mail: Floriana.Craciun@isc.cnr.it; Cordero, F.; Ciuchi, I. V.

2015-05-14

We present the results of dielectric and anelastic spectroscopy measurements, together with X-ray diffraction investigations, which allow us to establish more precisely the phase diagram of Pb{sub 1−x}La{sub x}(Zr{sub 0.9}Ti{sub 0.1}){sub 1−x/4}O{sub 3} (PLZT x/90/10) in the compositional range around the AFE/FE phase boundary (0 < x < 0.04). From structural analysis and polarization-electric field measurements, we have found that the ground state of PLZT samples with x < 0.025 is rhombohedral R3c, while samples with x > 0.032 are antiferroelectric with orthorhombic Pbam structure. In-between, for compositions with 0.025 ≤ x ≤ 0.032, a coexistence of the AFE/FE phases is evidenced. The use of complementary dielectric and anelastic techniques allows tomore » follow the phase transitions shifts throughout all the interesting composition range and to construct the temperature-composition phase diagram. The tilt instability line, separating the R3c and R3m low and high temperature phases, has been evidenced. Moreover, the new transition, associated with the onset of disordered tilting preceding the long range order of the R3c phase, previously found in Zr-rich Pb(Zr,Ti)O{sub 3}, is confirmed in rhombohedral PLZT x/90/10 compositions.« less

Illumination effects on the ferroelectric and photovoltaic properties of Pb0.95La0.05Zr0.54Ti0.46O3 thin film based asymmetric MFM structure

NASA Astrophysics Data System (ADS)

Batra, V.; Kotru, S.

2017-12-01

We report the effects of illumination on the ferroelectric and photovoltaic properties of the Pb0.95La0.05Zr0.54Ti0.46O3 (PLZT) thin film based asymmetric metal/ferroelectric/metal capacitor structure, using Au as a top electrode and Pt as a bottom electrode. Conductive-AFM (atomic force microscopy) measurements demonstrate the evolution of charge carriers in PLZT films on illumination. The capacitance-voltage, the polarization-electric field, and the leakage current-voltage characteristics of the asymmetric Au/PLZT/Pt capacitor are discussed under dark and illuminated conditions. The light generates charge carriers in the film, which increase the coercive field and net remnant polarization and decrease the capacitance. The leakage current of the capacitor increases by an order of magnitude upon illumination. The leakage current data analyzed to study the conduction mechanism shows that the capacitor structure follows the Schottky emission "1/4" law. The illuminated current density-voltage curve of the capacitor shows non-zero photovoltaic parameters. An open circuit voltage (Voc) of -0.19 V and a short circuit current density (Jsc) of 1.48 μA/cm2 were obtained in an unpoled film. However, after positive poling, the illuminated curve shifts towards a higher voltage value resulting in a Voc of -0.93 V. After negative poling, the curve shows no change in the Voc value. For both poling directions, the Jsc values decrease. The photocurrent in the capacitor shows a linear variation with the incident illumination intensity.

Direct thermal to electrical energy conversion using 9.5/65/35 PLZT ceramics in the ergodic relaxor phase.

PubMed

Chin, Thomas K; Lee, Felix Y; McKinley, Ian M; Goljahi, Sam; Lynch, Christopher S; Pilon, Laurent

2012-11-01

This paper reports on direct thermal to electrical energy conversion by performing the Olsen cycle on 9.5/65/35 lead lanthanum zirconate titanate (PLZT). The Olsen cycle consists of two isothermal and two isoelectric field processes in the electric displacement versus electric field diagram. It was performed by alternatively dipping the material in hot and cold dielectric fluid baths under specified electric fields. The effects of applied electric field, sample thickness, electrode material, operating temperature, and cycle frequency on the energy and power densities were investigated. A maximum energy density of 637 ± 20 J/L/cycle was achieved at 0.054 Hz with a 250-μm-thick sample featuring Pt electrodes and coated with a silicone conformal coating. The operating temperatures varied between 3°C and 140°C and the electric field was cycled between 0.2 and 6.0 MV/m. A maximum power density of 55 ± 8 W/L was obtained at 0.125 Hz under the same operating temperatures and electric fields. The dielectric strength of the material, and therefore the energy and power densities generated, increased when the sample thickness decreased from 500 to 250 μm. Furthermore, the electrode material was found to have no significant effect on the energy and power densities for samples subject to the same operating temperatures and electric fields. However, samples with electrode material possessing thermal expansion coefficients similar to that of PLZT were capable of withstanding larger temperature swings. Finally, a fatigue test showed that the power generation gradually degraded when the sample was subject to repeated thermoelectrical loading.

Commercial Scale Production of High Temperature

DTIC Science & Technology

1991-11-14

Rochester, Professor Alan Kadin and his graduate students Derek Mallory and Patrick Borelli , have concentrated on microwave measurements and intermediate...layers. Patrick Borelli was responsible for the PLZT/YBCO work. The same personnel will be available for the second year of the contract. We spent our

Optical design of a color film recorder with PLZT modulators

NASA Astrophysics Data System (ADS)

Carson, John F.

1990-08-01

A continuous tone colour film recorder was constructed that exposes 8 x 10 inch ISO 100 daylight-balanced sheet film in ten minutes at a resolution of 1000 pixels/inch. A rotating drum is used for line scan and a leadscrew driven by a stepper motor for page scan. Film loading and unloading is automatic. Light from a stationary xenon arc lamp is split into red green and blue channel components and conducted to a translating optical system by multimode optical fiber cables. Each colour component is then modulated by a small-area PLZT light valve. An annular portion of the modulated light beam is reflected to a photodetector whose signal is used for closed-loop modulator control. The central transmitted portion of the modulated beam is combined with the other colour components into a single beam. This beam illuminates an aperture that is imaged onto the film. An overview of the mechanical electrical and optical concepts will be presented with emphasis on the optical design. 1.

Strong variation of electrostrictive coupling near an intermediate temperature of relaxor ferroelectrics

NASA Astrophysics Data System (ADS)

Craciun, F.

2010-05-01

A sudden increase in the electrostrictive coefficient Q13 when temperature decreases is seen in three different types of ferroelectric relaxors (PLZT 9/65/35, PLZT 22/20/80, and PMN-PT) starting from ˜50K above the dielectric permittivity maximum temperature, Tm . The temperature dependence is attributed to the softening of the quasilocal mode occurring near dopants or charge-transfer sites. The steep increase when the temperature decreases could be related to the transition of polar nanoregions from dynamic to quasistatic regime, which introduces an intermediate temperature scale T∗ [W. Dmowski, S. B. Vakhrushev, I.-K. Jeong, M. P. Hehlen, F. Trouw, and T. Egami, Phys. Rev. Lett. 100, 137602 (2008); B. Dkhil, P. Gemeiner, A. Al-Barakaty, L. Bellaiche, E. Dul’kin, E. Mojaev, and M. Roth, Phys. Rev. B 80, 064103 (2009)], besides Burns temperature TB and freezing temperature Tf . Possible consequences for nonequilibrium phenomena, including high-temperature memory found in relaxors, are conjectured.

Associative Memories for Supercomputers

DTIC Science & Technology

1992-12-01

the Si/PLZT technology. Finally, the associative memory system design is presented. 14. SUBJECT TERMS IS NUMBER OF PAGES 60 Memory, Associative Memory...Hybrid lens design ...................................................................... 3 3. ASSOCIATIVE MEMORY STUDY...of California, san Diego 1. OBJECTIVES Our objective during the funding period, July 14 1989 to January 13 1991, was to design and study the

Controlling dielectric and relaxor-ferroelectric properties for energy storage by tuning Pb0.92La0.08Zr0.52Ti0.48O3 film thickness.

PubMed

Brown, Emery; Ma, Chunrui; Acharya, Jagaran; Ma, Beihai; Wu, Judy; Li, Jun

2014-12-24

The energy storage properties of Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ∼1200. Cyclic I-V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). The results show that, as the film thickness increases, the material transits from a linear dielectric to nonlinear relaxor-ferroelectric. While the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ∼80% to ∼30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.

Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb 0.92La 0.08Zr 0.52Ti 0.48O 3 Film Thickness

DOE PAGES

Brown, Emery; Ma, Chunrui; Acharya, Jagaran; ...

2014-12-24

The energy storage properties of Pb 0.92La 0.08Zr 0.52Ti 0.48O 3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ~1200. Cyclic I–V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). Our results show that, as the film thickness increases, the material transits from a linearmore » dielectric to nonlinear relaxor-ferroelectric. And while the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ~80% to ~30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.« less

Study of 0.1Ni0.8Zn0.2Fe2O4-0.9Pb1-3x/2LaxZr0.65Ti0.35O3 magnetoelectric composites

NASA Astrophysics Data System (ADS)

Rani, Rekha; Juneja, J. K.; Singh, Sangeeta; Raina, K. K.; Prakash, Chandra

2013-01-01

Magnetoelectric composites of nickel zinc ferrite (NZF) and La substituted lead zirconate titanate (PLZT) having representative formula 0.1Ni0.8Zn0.2Fe2O4-0.9Pb1-3x/2LaxZr0.65Ti0.35O3 (x=0, 0.01, 0.02 and 0.03) were synthesized by a conventional solid state route. X-ray diffraction analysis was carried out to confirm the coexistence of individual phases. Scanning electron microscope micrographs were taken for microstructural study of the samples. Dielectric properties were studied as a function of temperature and frequency. To study ferroelectric and magnetic ordering in composite samples, P-E and M-H hysteresis loops were recorded respectively. M-H hysteresis loops were taken for electrically poled and unpoled samples to confirm magnetoelectric coupling between the two phases (NZF and PLZT). La substitution results in significant improvement in dielectric, ferroelectric and piezoelectric properties of composite samples.

Field induced metastable ferroelectric phase in Pb 0.97La 0.03(Zr 0.90Ti 0.10) 0.9925O 3 ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ciuchi, I. V.; Chung, C. C.; Fancher, C. M.

2017-11-06

Pb 0.97La 0.03(Zr 0.9T i0.1)0.9925O3 (PLZT 3/90/10) ceramics prepared by solid-state reaction with the compositions near the antiferroelectric/ferroelectric (FE/AFE) phase boundary were studied. From the polarization–electric field P(E) dependence and ex situ X-ray study, an irreversible electric field induced AFE-to-FE phase transition is verified at room temperature. Dielectric and in situ temperature dependent X-ray analysis evidence that the phase transition sequence in PLZT 3/90/10-based ceramics can be readily altered by poling. A first order antiferroelectric-paraelectric (AFE-to-PE) transition occurred at ~190 °C in virgin sample and at ~180 °C in poled sample. In addition, a FE-to-AFE transition occurs in the poledmore » ceramic at much lower temperatures (~120 °C) with respect to the Curie range (~190 °C). The temperature-induced FE-to-AFE transition is diffuse and takes place in a broad temperature range of 72–135 °C. Lastly, the recovery of AFE is accompanied by an enhancement in the piezoelectric properties.« less

Energy-storage properties and electrocaloric effect of Pb(1-3x/2)LaxZr0.85Ti0.15O3 antiferroelectric thick films.

PubMed

Zhao, Ye; Hao, Xihong; Zhang, Qi

2014-07-23

Antiferroelectric (AFE) thick (1 μm) films of Pb(1-3x/2)LaxZr0.85Ti0.15O3 (PLZT) with x = 0.08, 0.10, 0.12, and 0.14 were deposited on LaNiO3/Si (100) substrates by a sol-gel method. The dielectric properties, energy-storage performance, electrocaloric effect, and leakage current behavior were investigated in detail. With increasing La content, dielectric constant and saturated polarizations of the thick films were gradually decreased. A maximum recoverable energy-storage density of 38 J/cm(3) and efficiency of 71% were achieved in the thick films with x = 0.12 at room temperature. A large reversible adiabatic temperature change of ΔT = 25.0 °C was presented in the thick films with x = 0.08 at 127 °C at 990 kV/cm. Moreover, all the samples had a lower leakage current density below 10(-6) A/cm(2) at room temperature. These results indicated that the PLZT AFE thick films could be a potential candidate for applications in high energy-storage density capacitors and cooling devices.

Diffractive optical element in materials testing

NASA Astrophysics Data System (ADS)

Silvennoinen, Raimo V. J.; Peiponen, Kai-Erik

1998-09-01

The object of this paper is to present a sensor based on diffractive optics that can be applied for the materials testing. The present sensor, which is based on the use of a computer-generated hologram (CGH) exploits the holographic imagery. The CGH-sensor was introduced for inspection of surface roughness and flatness of metal surfaces. The results drawn out by the present sensor are observed to be in accordance with the experimental data. Together with the double exposure holographic interferometry (DEHI) and digital electronic speckle pattern interferometry (DSPI) in elasticity inspection, the sensor was applied for the investigations of surface quality of opaque fragile materials, which are pharmaceutical compacts. The optical surface quality was observed to be related to the porosity of the pharmaceutical tablets. The CGH-sensor was also applied for investigations of optical quality of thin films as PLZT ceramics and coating of pharmaceutical compacts. The surfaces of PLZT samples showed fluctuations in optical curvature, and wedgeness for all the cases studied. For pharmaceutical compacts, the optical signals were observed to depend to a great extent on the optical constants of the coatings and the substrates, and in addition to the surface porosity under the coating.

Pyroelectric response of perovskite heterostructures incorporating conductive oxide electrodes

NASA Astrophysics Data System (ADS)

Tipton, Charles Wesley, IV

2000-10-01

The use of imaging technologies has become pervasive in many applications as the demand for situational awareness information has increased over the last decade. No better example of the integration of these technologies can be found than that of infrared or thermal imaging. This dissertation, in the field of thermal imaging, has been motivated by the desire to advance the technology of uncooled, thin-film pyroelectric sensors and focuses on the materials and structures from which the detector elements will be built. This work provides a detailed study of the pyroelectric response of the La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O (LPL) structure. The LPL structure was chosen based on the needs of thin film detectors, the unique properties of the conductive oxide La-Sr-Co-O (LSCO), and the broad applicability of the Pb-La-Zr-Ti-O (PLZT) material system. Epitaxial heterostructures were grown by pulsed laser deposition on single-crystal oxide substrates. Using the oxygen pressure during cooling and heating of the LSCO layer as a key variable, we have been able to produce structures that have a pronounced internal field in the as-grown state. In these capacitors, where the bottom electrode has a large concentration of oxygen vacancies, we have discovered very large pyroelectric responses that are 10 to 30 times larger than expected of PLZT-based pyroelectric materials (typical values are 20 to 40 nCcm-2K -1). The enhanced pyroelectric responses are very repeatable, stable over time, and distinctly different from responses attributed to thermally stimulated currents. Detailed positron annihilation spectroscopy measurements reveal that there is indeed an oxygen concentration gradient across the capacitor. Based on the results of this study, I will present an analysis of the enhanced pyroelectric response. Although the enhanced response has been correlated with high concentrations of oxygen vacancies in the PLZT film and LSCO electrodes, the mechanism by which the large pyroelectric currents are generated is not yet known. It is likely, however, that a sub-lattice of oxygen and lead vacancies forms the enhanced dipoles and that due to the highly defective nature of the lattice, has a large effective pyroelectric coefficient.

High Energy Storage Density and Impedance Response of PLZT2/95/5 Antiferroelectric Ceramics.

PubMed

Li, Bi; Liu, Qiuxiang; Tang, Xingui; Zhang, Tianfu; Jiang, Yanping; Li, Wenhua; Luo, Jie

2017-02-08

(Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O₃ (PLZT2/95/5) ceramics were successfully prepared via a solid-state reaction route. The dielectric properties were investigated in the temperature region of 26-650 °C. The dielectric diffuse anomaly in the dielectric relaxation was found in the high temperature region of 600-650 °C with increasing the measuring frequency, which was related to the dynamic thermal process of ionized oxygen vacancies generated in the high temperature. Two phase transition points were detected during heating, which were found to coexist from 150 to 200 °C. Electric field induced ferroelectric to antiferroelectric phase transition behavior of the (Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O₃ ceramics was investigated in this work with an emphasis on energy storage properties. A recoverable energy-storage density of 0.83 J/cm³ and efficiency of 70% was obtained in (Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O₃ ceramics at 55 kV/cm. Based on these results, (Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O₃ ceramics with a large recoverable energy-storage density could be a potential candidate for the applications in high energy-storage density ceramic capacitors.

Superconductivity devices: Commercial use of space

NASA Technical Reports Server (NTRS)

Haertling, Gene; Furman, Eugene; Hsi, Chi-Shiung; Li, Guang

1993-01-01

A YBCO thick film containing 20 percent Ag2O with a T(sub c) of 86.8 K and J(sub c) of 108 A/sq cm was obtained. The film was fabricated by a two-step firing process, i.e., firing the film at 1000 C for 10 minutes and annealing at 970 C for 30 minutes. The two-step firing process, however, was not suitable for the multiple-lead YBCO sample due to the formation of the 211 green phase at 1000 C in the multiple-lead YBCO sample. A BSCCO thick film printed on a MgO coated MSZ substrate and fired at 845 C for 2 hours exhibited a superconducting behavior at 89 K. Because of its porous microstructure, the critical current density of the BSCCO thick film was limited. This report also includes the results of the YBCO and BSCCO materials used as oxide electrodes for ferroelectric materials. The YBCO electroded PLZT showed higher remanent polarization and coercive field than the sample electroded with silver paste. A higher Curie temperature for the PLZT was obtained from the YBCO electroded sample. The BSCCO electroded sample, however, exhibited the same Curie temperature as that of a silver electroded sample. Dissipation factors of the ferroelectric samples increased when the oxide electrode was applied.

Targeted Basic Studies of Ferroelectric and Ferroelastic Materials for Piezoelectric Transducer Applications.

DTIC Science & Technology

1983-03-01

PLZT ceramics. Low temperature studies on pure and doped PZTs have given the first clear indi- cation of the intrinsic (averaged) single domain...8217 11 4.0 PYROELECTRIC MATERIALS 27 4.1 Micro Composites 27 4.2 ’ Doped ’ Tungsten Bronze and TGS Structure Single Crystals 28 5.0 FERROELECTRIC...differences in piezo- electric activity, coupling constant and permittivity between differently doped PZTs are extrinsic and freeze out at 4°K. Extending

Design, Fabrication, Characterization and Modeling of Integrated Functional Materials

DTIC Science & Technology

2012-10-01

films. The successful optimization of the PZT thin film growth parameters allowed us to set the stage for doping PZT with rare earth elements...Lanthanum (La)-doped PZT (PLZT) (where Pb2+ is substituted by La3+), has a dramatic enhancement in the piezoelectric properties. There have been only a...few recent reports on the growth of La- PZT films. However, most of the reports were based on chemical routes such as metal organic decomposition

High Energy Storage Density and Impedance Response of PLZT2/95/5 Antiferroelectric Ceramics

PubMed Central

Li, Bi; Liu, Qiuxiang; Tang, Xingui; Zhang, Tianfu; Jiang, Yanping; Li, Wenhua; Luo, Jie

2017-01-01

(Pb0.97La0.02)(Zr0.95Ti0.05)O3 (PLZT2/95/5) ceramics were successfully prepared via a solid-state reaction route. The dielectric properties were investigated in the temperature region of 26–650 °C. The dielectric diffuse anomaly in the dielectric relaxation was found in the high temperature region of 600–650 °C with increasing the measuring frequency, which was related to the dynamic thermal process of ionized oxygen vacancies generated in the high temperature. Two phase transition points were detected during heating, which were found to coexist from 150 to 200 °C. Electric field induced ferroelectric to antiferroelectric phase transition behavior of the (Pb0.97La0.02)(Zr0.95Ti0.05)O3 ceramics was investigated in this work with an emphasis on energy storage properties. A recoverable energy-storage density of 0.83 J/cm3 and efficiency of 70% was obtained in (Pb0.97La0.02)(Zr0.95Ti0.05)O3 ceramics at 55 kV/cm. Based on these results, (Pb0.97La0.02)(Zr0.95Ti0.05)O3 ceramics with a large recoverable energy-storage density could be a potential candidate for the applications in high energy-storage density ceramic capacitors. PMID:28772503

Research in High Dielectric Properties of Ferroelectric Materials

DTIC Science & Technology

1992-01-01

compositions) on perovskite SrTiO 3 substrates. However, only a small range of perovskite materials can be grown using SrTiO 3 because of its small unit cell (a...because of the excellent homogeneity and small particle size of sol-gel films, the spontaneous polarization of PZT films grown by this technique has...9-11]. are polycrystalline due to the poor lattice match with The deposition of PZT and PLZT films by the the substrates. A small split of the (200

Piezoelectric and Electrostrictive Materials for Transducer Applications. Volume 1

DTIC Science & Technology

1990-01-31

by non-stoichiometry or by doping with aleovalent ions. For doped materials the aging is very similar to that in PLZT, again affecting the dispersive...during aging looks similar to that in MnO doped PMNPT.? Figure 8 shows the Cole-Cole plot for different aging time in the quenched sample. CL~ m ~ m rmt... parameters show that the angle of tilt of the arc from the real axis a and the average time constant r decrease during aging . The Cole-Cole plot become

Develop Techniques for Ion Implantation of PLZT for Adaptive Optics

DTIC Science & Technology

1989-11-01

WL-TR-89-26 FIGURES (Continued) Fizure Page 20 EDX elemental spectrum from perovskite region of the sample shown in Fig. 15. 65 21 EDX elemental...pyroelectric response. 126 84 Result of doping PZT with La and Mn (Ref. 7). 127 85 APW results along the lin for several perovskite - type compounds and ReO 2...structure of the calcined powder was analyzed and shown to be mainly the hexagonal/rhombohedral phase within 17 WL-TR-89-26 the perovskite structure of

Compact magnetograph

NASA Technical Reports Server (NTRS)

Title, A. M.; Gillespie, B. A.; Mosher, J. W.

1982-01-01

A compact magnetograph system based on solid Fabry-Perot interferometers as the spectral isolation elements was studied. The theory of operation of several Fabry-Perot systems, the suitability of various magnetic lines, signal levels expected for different modes of operation, and the optimal detector systems were investigated. The requirements that the lack of a polarization modulator placed upon the electronic signal chain was emphasized. The PLZT modulator was chosen as a satisfactory component with both high reliability and elatively low voltage requirements. Thermal control, line centering and velocity offset problems were solved by a Fabry-Perot configuration.

Spatial Light Modulators and Applications: Summaries of Papers Presented at the Spatial Light Modulators and Applications Topical Meeting Held on March 15-17, 1993 in Palm Springs, California

DTIC Science & Technology

1993-03-17

modulator: Number of Elements 16 x 16 Pixel Size 1 mmxl mm Area Fill Factor > 90% Reflectance > 90% Phase Shift 900 Frame Rate > 1 kHz Operational Spectral...electro-optic constants. By using reflected light from the second interface a factor of two increase in phase shift is obtained for an applied voltage vs...wavelengths in general require thinner PLZT wafers. One of the objectives of the SLM design was to maximize pixel area fill factor and thereby the

Study of x CNFO + (1-x) PLZT magnetoelectric composites

NASA Astrophysics Data System (ADS)

Dipti, Singh, Sangeeta; Juneja, J. K.; Pant, R. P.; Raina, K. K.; Prakash, Chandra

2014-04-01

In the present paper, we are reporting the studies on structural, dielectric, ferroelectric and magnetic properties of Lanthanum (La) substituted Lead Zirconate Titanate (PZT) and Cobalt Nickel ferrite (CNFO) composites with compositional formula x(Co0.80Ni0.20Fe2O4)+(1-x)(Pb1.01625La0.0025Zr0.55Ti0.45O3) (x = 0.00,0.10). The materials were synthesized by solid state reaction route. XRD analysis confirms the presence of both ferrite and ferroelectric phases. Dielectric properties were studied as a function of frequency and temperature. Ferroelectric P-E and Magnetic M-H hysteresis loops were measured at room temperature.

Fabrication of ultrathin film capacitors by chemical solution deposition

DOE PAGES

Brennecka, Geoff L.; Tuttle, Bruce A.

2007-10-01

We present that a facile solution-based processing route using standard spin-coating deposition techniques has been developed for the production of reliable capacitors based on lead lanthanum zirconate titanate (PLZT) with active areas of ≥1 mm 2 and dielectric layer thicknesses down to 50 nm. With careful control of the dielectric phase development through improved processing, ultrathin capacitors exhibited slim ferroelectric hysteresis loops and dielectric constants of >1000, similar to those of much thicker films. Furthermore, it has been demonstrated that chemical solution deposition is a viable route to the production of capacitor films which are as thin as 50 nmmore » but are still macroscopically addressable with specific capacitance values >160 nF/mm 2.« less

Method for fabrication of ceramic dielectric films on copper foils

DOEpatents

Ma, Beihai; Narayanan, Manoj; Dorris, Stephen E.; Balachandran, Uthamalingam

2017-06-14

The present invention provides copper substrate coated with a lead-lanthanum-zirconium-titanium (PLZT) ceramic film, which is prepared by a method comprising applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250.degree. C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450.degree. C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750.degree. C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas.

Superconductivity devices: Commercial use of space

NASA Technical Reports Server (NTRS)

Haertling, Gene; Furman, Eugene; Hsi, Chi-Shiung; Li, Guang

1993-01-01

The processing and screen printing of the superconducting BSCCO and 123 YBCO materials on substrates is described. The resulting superconducting properties and the use of these materials as possible electrode materials for ferroelectrics at 77 K are evaluated. Also, work performed in the development of solid-state electromechanical actuators is reported. Specific details include the fabrication and processing of high strain PBZT and PLZT electrostrictive materials, the development of PSZT and PMN-based ceramics, and the testing and evaluation of these electrostrictive materials. Finally, the results of studies on a new processing technology for preparing piezoelectric and electrostrictive ceramic materials are summarized. The process involves a high temperature chemical reduction which leads to an internal pre-stressing of the oxide wafer. These reduced and internally biased oxide wafers (RAINBOW) can produce bending-mode actuator devices which possess a factor of ten more displacement and load bearing capacity than present-day benders.

Temperature and induced electric field dependence on the phase transition of 9/70/30, 9/65/35 and 9/60/40 PLZT ceramics

NASA Astrophysics Data System (ADS)

Somwan, Siripong; Funsueb, Narit; Limpichaipanit, Apichart; Ngamjarurojana, Athipong

2018-05-01

In this work, Pb0.91La0.09(Zr1-xTix)0.9775O3 ceramics where x = 0.3, 0.35 and 0.4 (the composition near MPB) were prepared by solid solution method. After fabrication process, electrical property was measured by LCR meter. Polarization and induced strain behavior of the samples were investigated by using interferometry technique modified with Sawyer-Tower circuit at various temperatures. The results of dielectric, polarization and induced strain properties were due to the Zr/Ti ratios, which changed their behavior when temperature was varied (30-70 °C). The normal to macro-micro domains to relaxor and paraelectric phase transition was demonstrated which is related to linear or nonlinear increase of polarization and induced strain as a function of applied subswitching electric field.

Adaptive optics; Proceedings of the Meeting, Arlington, VA, April 10, 11, 1985

NASA Astrophysics Data System (ADS)

Ludman, J. E.

Papers are presented on the directed energy program for ballistic missile defense, a self-referencing wavefront interferometer for laser sources, the effects of mirror grating distortions on diffraction spots at wavefront sensors, and the optical design of an all-reflecting, high-resolution camera for active-optics on ground-based telescopes. Also considered are transverse coherence length observations, time dependent statistics of upper atmosphere optical turbulence, high altitude acoustic soundings, and the Cramer-Rao lower bound on wavefront sensor error. Other topics include wavefront reconstruction from noisy slope or difference data using the discrete Fourier transform, acoustooptic adaptive signal processing, the recording of phase deformations on a PLZT wafer for holographic and spatial light modulator applications, and an optical phase reconstructor using a multiplier-accumulator approach. Papers are also presented on an integrated optics wavefront measurement sensor, a new optical preprocessor for automatic vision systems, a model for predicting infrared atmospheric emission fluctuations, and optical logic gates and flip-flops based on polarization-bistable semiconductor lasers.

Superconductivity Devices: Commercial Use of Space

NASA Technical Reports Server (NTRS)

Haertling, Gene (Principal Investigator); Furman, Eugene; Li, Guang

1996-01-01

The work described in this report covers various aspects of the Rainbow solid-state actuator and sensor technologies. It is presented in five parts dealing with sensor applications, nonlinear properties, stress-optic and electrooptic properties, stacks and arrays, and publications. The Rainbow actuator technology is a relatively new materials development which had its inception in 1992. It involves a new processing technique for preparing pre-stressed, high lead containing piezoelectric and electrostrictive ceramic materials. Ceramics fabricated by this method produce bending-mode actuator devices which possess several times more displacement and load bearing capacity than present-day benders. Since they can also be used in sensor applications, Rainbows are part of the family of materials known as smart ceramics. During this period, PLZT Rainbow ceramics were characterized with respect to their piezoelectric properties for potential use in stress sensor applications. Studies of the nonlinear and stress-optic/electrooptic birefringent properties were also initiated during this period. Various means for increasing the utility of stress-enhanced Rainbow actuators are presently under investigation.

Piezoresponse force microscopy of ferroelectric relaxors =

NASA Astrophysics Data System (ADS)

Kiselev, Dmitry

Nesta tese, ferroelectricos relaxor (I dont know uf the order is correct) de base Pb das familias (Pb,La)(Zr,Ti)O3 (PLZT), Pb(Mg1/3,Nb2/3)O3-PbTiO3 (PMN-PT), Pb(Zn1/3,Nb2/3)O3-PbTiO3 (PZN-PT) foram investigados e analisados. As propriedades ferroelectricas e dielectricas das amostras foram estudadas por metodos convencionais de macro e localmente por microscopia de forca piezoelectrica (PFM). Nos cerâmicos PLZT 9.75/65/35 o contraste da PFM a escala nanometrica foi investigado em funcao do tamanho e orientacao dos graos. Apurou-se que a intensidade do sinal piezoelectrico das nanoestruturas diminui com o aumento da temperatura e desaparece a 490 K (La mol. 8%) e 420 K (9,5%). Os ciclos de histerese locais foram obtidos em funcao da temperatura. A evolucao dos parâmetros macroscopicos e locais com a temperatura de superficie sugere um forte efeito de superficie nas transicoes de fase ferroelectricas do material investigado. A rugosidade da parede de dominio e determinada por PFM para a estrutura de dominio natural existente neste ferroelectrico policristalino. Alem disso, os dominios ferroelectricos artificiais foram criados pela aplicacao de pulsos electricos a ponta do condutor PFM e o tamanho de dominio in-plane foi medido em funcao da duracao do pulso. Todas estas experiencias levaram a conclusao de que a parede de dominio em relaxors do tipo PZT e quase uma interface unidimensional. O mecanismo de contraste na superficie de relaxors do tipo PLZT e medido por PFMAs estruturas de dominio versus evolucao da profundidade foram estudadas em cristais PZN-4,5%PT, com diferentes orientacoes atraves da PFM. Padroes de dominio irregulares com tamanhos tipicos de 20-100 nm foram observados nas superficies com orientacao das amostras unpoled?. Pelo contrario, os cortes de cristal exibem dominios regulares de tamanho micron normal, com os limites do dominio orientados ao longo dos planos cristalograficos permitidos. A existencia de nanodominios em cristais com orientacao esta provisoriamente (wrong Word) atribuida a natureza relaxor de PZN-PT, onde pequenos grupos polares podem formar-se em coindicoes de zero-field-cooling (ZFC). Estes nanodominios sao considerados como os nucleos do estado de polarizacao oposta e podem ser responsaveis pelo menor campo coercitivo para este corte de cristal em particular. No entanto, a histerese local piezoeletrica realizada pelo PFM a escala nanometrica indica uma mudanca de comportamento de PZN-PT semelhante para ambas as orientacoes cristalograficas investigadas. A evolucao das estruturas de dominio com polimento abaixo da superficie do cristal foi investigada. O dominio de ramificacoes e os efeitos de polarizacao de triagem apos o polimento e as medicoes de temperatura tem sido estudados pela PFM e pela analise SEM. Alem disso, verificou-se que a intensidade do sinal piezoelectrico a partir das estruturas de nanodominio diminui com o aumento da temperatura, acabando por desaparecer aos 430 K (orientacao ) e 470 K (orientacao ). Esta diferenca de temperatura nas transicoes de fase local em cristais de diferentes orientacoes e explicada pelo forte efeito de superficie na transicao da fase ferroeletrica em relaxors. A comutacao da polarizacao em relaxor ergodico e nas fases ferroelectricas do sistema PMN-PT foram realizadas pela combinacao de tres metodos, Microscopia de Forca Piezoelectrica, medicao de um unico ponto de relaxamento eletromecânico e por ultimo mapeamento de espectroscopia de tensao. A dependencia do comportamento do relaxamento na amplitude e tempo da tensao de pulso foi encontrada para seguir um comportamento logaritmico universal com uma inclinacao quase constante. Este comportamento e indicativo da progressiva populacao dos estados de relaxamento lento, ao contrario de uma relaxacao linear na presenca de uma ampla distribuicao do tempo de relaxamento. O papel do comportamento de relaxamento, da nao-linearidade ferroelectrica e da heterogeneidade espacial do campo na ponta da sonda de AFM sobre o comportamento do ciclo de histerese e analisada em detalhe. Os ciclos de histerese para ergodica PMN- 10%PT sao mostrados como cineticamente limitados, enquanto que no PMN, com maior teor de PT, sao observados verdadeiros ciclos de histerese ferroelectrica com vies de baixa nucleacao.

Better ceramics through chemistry. 4

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zelinski, B.J.J.; Brinker, C.J.; Clark, D.E.

1990-01-01

At this year's meeting, research into the area of reaction mechanisms and kinetics of silicon species remained strong, while significant advances in the area of structure and properties of modified and unmodified metal alkoxide species were reported. The complementary area of processing in water based systems also received considerable attention with emphasis being placed on the hydrolysis behavior of ions in solution. The nature of particle/aggregate growth was also a major topic of discussion with papers being presented on the role of aggregation in particle growth and on the nature and rheology of concentrated suspensions. Important developments in the areamore » of mechanical properties of aerogels, fibers and films were presented as well as research into techniques for in situ monitoring of films during dip coating. Continued advances in applications which utilize solution derived ceramics were also reported. These applications included GRIN lenses, planar waveguides, optical filters and switches, transpiration cooled windows, dye-polymer composites for nonlinear optics, dielectrics and electro-optic materials including PLZT's and the niobates, and chemical sensors. Finally, one of the meeting highlights was a special evening session on biomimetics: ceramic processing in natural systems.« less

Self-Organization of Ions at the Interface between Graphene and Ionic Liquid DEME-TFSI.

PubMed

Hu, Guangliang; Pandey, Gaind P; Liu, Qingfeng; Anaredy, Radhika S; Ma, Chunrui; Liu, Ming; Li, Jun; Shaw, Scott K; Wu, Judy

2017-10-11

Electrochemical effects manifest as nonlinear responses to an applied electric field in electrochemical devices, and are linked intimately to the molecular orientation of ions in the electric double layer (EDL). Herein, we probe the origin of the electrochemical effect using a double-gate graphene field effect transistor (GFET) of ionic liquid N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulfonyl)imide (DEME-TFSI) top-gate, paired with a ferroelectric Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 (PLZT) back-gate of compatible gating efficiency. The orientation of the interfacial molecular ions can be extracted by measuring the GFET Dirac point shift, and their dynamic response to ultraviolet-visible light and a gate electric field was quantified. We have observed that the strong electrochemical effect is due to the TFSI anions self-organizing on a treated GFET surface. Moreover, a reversible order-disorder transition of TFSI anions self-organized on the GFET surface can be triggered by illuminating the interface with ultraviolet-visible light, revealing that it is a useful method to control the surface ion configuration and the overall performance of the device.

Proceedings of the 8th International Symposium on Applications of Ferroelectrics

NASA Astrophysics Data System (ADS)

Liu, M.; Safari, A.; Kingon, A.; Haertling, G.

1993-02-01

The eighth International Symposium on the Applications of Ferroelectrics was held in Greenville, SC, on August 30 to Sept 2, 1992. It was attended by approximately 260 scientists and engineers who presented nearly 200 oral and poster papers. The three plenary presentations covered ferroelectric materials which are currently moving into commercial exploitation or have strong potential to do so. These were (1) pyroelectric imaging, (2) ferroelectric materials integrated with silicon for use as micromotors and microsensors and (3) research activity in Japan on high permittivity materials for DRAM's. Invited papers covered such subjects as pyroelectric and electrooptic properties of thin films, photorefractive effects, ferroelectric polymers, piezoelectric transducers, processing of ferroelectrics, domain switching in ferroelectrics, thin film memories, thin film vacuum deposition techniques and the fabrication of chemically prepared PZT and PLZT thin films. The papers continued to reflect the large interest in ferroelectric thin films. It was encouraging that there have been substantial strides made in both the processing and understanding of the films in the last two years. It was equally clear, however, that much still remains to be done before reliable thin film devices will be available in the marketplace.

Study of xCo0.8Ni0.2Fe2O4+(1-x) Pb0.99625 La0.0025Zr0.55Ti0.45O3 magnetoelectric composites

NASA Astrophysics Data System (ADS)

Dipti; Singh, Sangeeta; Juneja, J. K.; Raina, K. K.; Kotnala, R. K.; Prakash, Chandra

2016-06-01

We are reporting here, the studies of the structural, dielectric, ferroelectric and magnetic properties of magnetoelectric composites of La modified lead zirconate titanate (PLZT) and Ni modified cobalt ferrite (CNFO) with compositional formula xCo0.8Ni0.2Fe2O4+(1-x) Pb0.99625La0.0025Zr0.55Ti0.45O3 (x=0.00, 0.05, 0.10, 0.15 and 1.00 by weight) prepared by the solid state reaction method. Coexistence of both the phases in composites was confirmed by X-Ray diffraction technique. The microstructure and average grain size were determined from Scanning Electron Micrograph (SEM) in backscattered mode. Both the phases could be observed clearly. The variations of dielectric properties with frequency and temperature were also studied. P-E and M-H hysteresis measurements were carried. Magnetoelectric coupling (ME) coefficient for samples with x=0.05 and 0.10 were measured as a function of DC magnetic field. Maximum value of ME coefficient (1.2 mV/cm Oe) and piezoelectric coefficient (96 pC/N) for x=0.05 were observed.

A brief review on relaxor ferroelectrics and selected issues in lead-free relaxors

NASA Astrophysics Data System (ADS)

Ahn, Chang Won; Hong, Chang-Hyo; Choi, Byung-Yul; Kim, Hwang-Pill; Han, Hyoung-Su; Hwang, Younghun; Jo, Wook; Wang, Ke; Li, Jing-Feng; Lee, Jae-Shin; Kim, Ill Won

2016-06-01

Relaxor ferroelectricity is one of the most widely investigated but the least understood material classes in the condensed matter physics. This is largely due to the lack of experimental tools that decisively confirm the existing theoretical models. In spite of the diversity in the models, they share the core idea that the observed features in relaxors are closely related to localized chemical heterogeneity. Given this, this review attempts to overview the existing models of importance chronologically, from the diffuse phase transition model to the random-field model and to show how the core idea has been reflected in them to better shape our insight into the nature of relaxor-related phenomena. Then, the discussion will be directed to how the models of a common consensus, developed with the so-called canonical relaxors such as Pb(Mg1/3Nb2/3)O3 (PMN) and (Pb, La)(Zr, Ti)O3 (PLZT), are compatible with phenomenological explanations for the recently identified relaxors such as (Bi1/2Na1/2)TiO3 (BNT)-based lead-free ferroelectrics. This review will be finalized with a discussion on the theoretical aspects of recently introduced 0-3 and 2-2 ferroelectric/relaxor composites as a practical tool for strain engineering.

Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghonge, S.G.; Goo, E.; Ramesh, R.

1994-12-31

TEM and X-ray diffraction studies of PZT, PLZT, lead titanate and bismuth titanate ferroelectric thin films and YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}(YBCO), Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}(BSCCO) and La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) electrically conductive oxide thin films, that are sequentially deposited by pulsed laser ablation, show that these films may be deposited epitaxially onto LaAlO{sub 3}(LAO) or Si substrates. The conductive oxides are promising candidates for use is electrodes in place of metal electrodes in integrated ferroelectric device applications. The oxide electrodes are more chemically compatible with the ferroelectric films. High resolution electron microscopy his been used to investigate the interfacemore » between the ferroelectric and metal oxide thin films and no reaction was detected. Epitaxial growth is possible due to the similar crystal structures and the small lattice mismatch. The lattice mismatch that is present causes the domains in the ferroelectric films to be preferentially oriented and in the case of lead titanate, the film is single domain. These films may also have potential applications in integrated optical devices.« less

The temperature dependences of electromechanical properties of PLZT ceramics

NASA Astrophysics Data System (ADS)

Czerwiec, M.; Zachariasz, R.; Ilczuk, J.

2008-02-01

The mechanical and electrical properties in lanthanum modified lead zirconate-titanate ceramics of 5/50/50 and 10/50/50 were studied by mechanical loss Q - 1, Young's modulus E, electric permittivity ɛ and tangent of dielectric loss of angle tgδ measurements. The internal friction Q - 1 and Young modulus E measured from 290 K to 600 K shows that Curie temperature TC is located at 574 K and 435 K (1st cycle of heating) respectively for ceramic samples 5/50/50 and 10/50/50. The movement of TC in second cycle of heating to lower temperature (561 K for 5/50/50 and 420 K for 10/50/50) has been observed. Together with Q - 1 and E measurements, temperature dependences of ɛ=f(T) and tgδ=f(T) were determinated in temperature range from 300 K to 730 K. The values of TC obtained during ɛ and tgδ measurements were respectively: 560 K for 5/50/50 and 419 K for 10/50/50. These temperatures are almost as high as the temperatures obtained by internal friction Q - 1 measurements in second cycle of heating. In ceramic sample 10/50/50 the additional maximum on internal friction Q - 1 curve at the temperature 316 K was observed.

Probing the Nanodomain Origin and Phase Transition Mechanisms in (Un)Poled PMN-PT Single Crystals and Textured Ceramics

PubMed Central

Slodczyk, Aneta; Colomban, Philippe

2010-01-01

Outstanding electrical properties of solids are often due to the composition heterogeneity and/or the competition between two or more sublattices. This is true for superionic and superprotonic conductors and supraconductors, as well as for many ferroelectric materials. As in PLZT ferroelectric materials, the exceptional ferro- and piezoelectric properties of the PMN-PT ((1−x)PbMg1/3Nb2/3O3−xPbTiO3) solid solutions arise from the coexistence of different symmetries with long and short scales in the morphotropic phase boundary (MPB) region. This complex physical behavior requires the use of experimental techniques able to probe the local structure at the nanoregion scale. Since both Raman signature and thermal expansion behavior depend on the chemical bond anharmonicity, these techniques are very efficient to detect and then to analyze the subtitle structural modifications with an efficiency comparable to neutron scattering. Using the example of poled (field cooling or room temperature) and unpoled PMN-PT single crystal and textured ceramic, we show how the competition between the different sublattices with competing degrees of freedom, namely the Pb-Pb dominated by the Coulombian interactions and those built of covalent bonded entities (NbO6 and TiO6), determine the short range arrangement and the outstanding ferro- and piezoelectric properties. PMID:28883367

Martensitelike spontaneous relaxor-normal ferroelectric transformation in Pb(Zn1/3Nb2/3)O3-PbLa(ZrTi)O3 system

NASA Astrophysics Data System (ADS)

Deng, Guochu; Ding, Aili; Li, Guorong; Zheng, Xinsen; Cheng, Wenxiu; Qiu, Pingsun; Yin, Qingrui

2005-11-01

The spontaneous relaxor-normal ferroelectric transformation was found in the tetragonal composition of Pb(Zn1/3Nb2/3)O3-PbLa(ZrTi)O3 (0.3PZN-0.7PLZT) complex ABO3 system. The corresponding dielectric permittivities and losses of different compositions located near the morphotrophic phase boundary were analyzed. By reviewing all of the results about this type of transformation in previous references, the electric, compositional, structural, and thermodynamic characteristics of the spontaneous relaxor-normal transformation were proposed. Additionally, the adaptive phase model for martensite transformation proposed by Khachaturyan et al. [Phys. Rev. B 43, 10832 (1991)] was introduced into this ferroelectric transformation to explain the unique transformation pathway and associated features such as the tweedlike domain patterns and the dielectric dispersion under the critical transition temperature. Due to the critical compositions near the MPB, the ferroelectric materials just fulfill the condition, in which the adaptive phases can form in the transformation procedure. The formation of the adaptive phases, which are composed of stress-accommodating twinned domains, makes the system bypass the energy barrier encountered in conventional martensite transformations. The twinned adaptive phase corresponds to the tweedlike domain pattern under a transmission electronic microscope. At lower temperature, these precursor phases transform into the conventional ferroelectric state with macrodomains by the movement of domain walls, which causes a weak dispersion in dielectric permittivity.

High Performance Piezoelectric Thin Films for Shape Control in Large Inflatable Structures

NASA Technical Reports Server (NTRS)

Neurgaonkar, R. R.; Nelson, J. G.

1999-01-01

The objective of this research and development program was to develop PbZr(1-x)Ti(x)O3 (PZT) and Pb(1-x)Ba(x)Nb2O6 (PBN) materials with large piezoelectric response which are suitable for shape control in large inflatable structures. Two approaches were to be considered: (1) direct deposition of PZT and PBN films on flexible plastic or thin metal foil substrates, and (2) deposition on Si followed by fabrication of hybrid structures on mylar or kapton. Testing in shape control concepts was carried out at JPL and based on their results, the required modifications were made in the final film compositions and deposition techniques. The program objective was to identify and then optimize piezoelectric materials for NASA shape control applications. This involved the bulk piezoelectric and photovoltaic responses and the compatibility of the thin films with appropriate substrate structures. Within the PZT system, Rockwell has achieved the highest reported piezoelectric coefficient (d(sub 33) greater than 100 pC/N) of any ceramic composition. We used this experience in piezoelectric technology to establish compositions that can effectively address the issues of this program. The performance of piezoelectric thin films depends directly on d(sub ij) and Epsilon. The challenge was to find PZT compositions that maintained high d(sub ij) and Epsilon, while also exhibiting a large photovoltaic effect and integrate thin films of this composition into the system structure necessary to meet shape control applications. During the course of this program, several PZT and PLZT compositions were identified that meet these requirements. Two such compositions were successfully used in electrical and optical actuation studies of thin film structures.

High Performance Piezoelectric Thin Films for Shape Control in Large Inflatable Structures

NASA Technical Reports Server (NTRS)

Neurgaonkar, R. R.; Nelson, J. G.

1999-01-01

The objective of this research and development program was to develop PbZr(1-x)Ti(x)O3 (PZT) and Pb(1-x)Ba(x)Nb2O6 (PBN) materials with large piezoelectric response which are suitable for shape control in large inflatable structures. Two approaches were to be considered: (1) direct deposition of PZT and PBN films on flexible plastic or thin metal foil substrates, and (2) deposition on Si followed by fabrication of hybrid structures on mylar or kapton. Testing in shape control concepts was carried out at JPL and based on their results, the required modifications were made in the final film compositions and deposition techniques. The program objective was to identify and then optimize piezoelectric materials for NASA shape control applications. This involved the bulk piezoelectric and photovoltaic responses and the compatibility of the thin films with appropriate substrate structures. Within the PZT system, Rockwell has achieved the highest reported piezoelectric coefficient (d(sub 33) greater than 100 pC/N) of any ceramic composition. We used this experience in piezoelectric technology to establish compositions that can effectively address the issues of this program. The performance of piezoelectric thin films depends directly on d(sub ij) and epsilin. The challenge was to find PZT compositions that maintained high d(sub ij) and epsilon, while also exhibiting a large photovoltaic effect and integrate thin films of this composition into the system structure necessary to meet shape control applications. During the course of this program, several PZT and PLZT compositions were identified that meet these requirements. Two such compositions were successfully used in electrical and optical actuation studies of thin film structures.

RAINBOWS and CERAMBOWS: The Technologies of Pre-Stressed Piezo Actuators

NASA Technical Reports Server (NTRS)

Haertling, Gene H.

1996-01-01

Amplified mechanical displacement effects, similar to those observed in the recently reported Rainbow actuators, have also been found to exist in prestressed ceramic/metal composite structures coined as CERAMBOW's - an acronym for CERamic And Metal Biased Oxide Wafer. Mimicking the Rainbows in many ways, the intentionally created internal compressive and tensile stresses within the Cerambows are used to amplify their displacement properties via the combined effects of piezoelectric d31 strain and domain reorientation. They are fabricated from ferroelectric, piezoelectric or electrostrictive materials and metal substrates of significantly different thermal expansions which are largely responsible for the creation of the stress. Typical ceramics used in Cerambows are PZT, PLZT, PBZT, PSZT and PMN and some typical metal substrates are Al, Ag, Ni, brass, steel and Be/Cu foil. Shapes can vary from round disks to square plates and rectangular bars. Formed at an elevated temperature of approximately 250 C, the stresses on cooling to room temperature are generally sufficient to produce displacements as large as 0.125mm (5 mils) when activated unipolar and 0.25mm (10 mils) when operated bipolar at 450 volts in a dome mode. Comparing equal structures of a Cerambow with a Rainbow, the Cerambow was found to achieve approximately 70% of the displacement that would normally be obtained with a Rainbow. Although this difference in displacement is sufficient to prefer a Rainbow for many applications, there are some advantages for the Cerambow. Among these are (1) the processing temperatures are lower, (2) high lead-containing ceramics are not required and (3) in some instances the metal substrate is more convenient to interface with other elements of a device. However, the disadvantages include (1) lower displacement in the dome mode of operation, (2) the higher displacement saddle mode has not yet been demonstrated with a Cerambow and (3) the ceramic/metal bond interface is a possible failure area when operated for extended periods of time. The applications for Cerambows are considered to be similar to Rainbows, i.e., actuators, pumps, deflectors, vibrators, speakers, hydrophones, hydroprojectors, switches, etc.

Electron emission and beam generation using ferroelectric cathodes

NASA Astrophysics Data System (ADS)

Flechtner, Donald D.

1999-06-01

In 1989, researchers at CERN published the discovery of significant electron emission (1-100 A/cm2) from Lead-Lanthanum-Zirconate- Titanate (PLZT). The publication of these results led to international interest in ferroelectric cathodes studies for use in pulsed power devices. At Cornell University in 1991, experiments with Lead-Zirconate-Titanate (PZT) compositions were begun to study the feasibility of using this ferroelectric material as a cathode in the electron gun section of High Power Traveling Wave Tube Amplifier Experiments. Current-voltage characteristics were documented for diode voltages ranging from 50-500,000 V with anode cathode gaps of.5-6 cm. A linear current-voltage relation was found for voltages less than 50 kV. For diode voltages >=200 kV, a typical Child-Langmuir V3/2 dependence was observed. Additional experiments have demonstrated repetition rates of up to 50 Hz with current densities of >=20 A/cm2. These results have been used in the ongoing design and construction of the electron gun for a 500 kV pulse modulator capable of repetitive operation at 1 Hz. The electron gun uses a PZT 55/45 (Pb(Zr.55,Ti.45 )O3) cathode to produce a <=400 A electron beam focused by a converging magnetic field. Studies of the emission process itself indicate the initial electrons are produced by field emission from the metallic grid applied to the front surface of the cathode. The field emission is induced by the application of a fast rising 1-3 kV, 150 ns pulse to the rear electrode of the 1 mm thick ferroelectric. Field emission can lead to explosive emission from microprotrusions and metal-ferroelectric-vacuum triple points forming a diffuse plasma on the surface of the sample. Under long pulse experiments (1-5 μs), plasma velocities of ~2 cm/μs were measured from gap closure rates. Results from an ion Faraday cup experiment showed ion velocities of 1-2 cm/μs. Experimental evidence indicates the electron emission is dependent on the field emission initiated by the voltage applied to rear surface of the ferroelectric; however, for current pulse durations on the order of microseconds, the surface plasma expansion into the gap can dominate current flow.