Science.gov

Sample records for pn charge-exchange-process yields

  1. Modeling the Hydrogen-Proton Charge-Exchange Process in Global Heliospheric Simulations

    NASA Astrophysics Data System (ADS)

    DeStefano, A.; Heerikhuisen, J.

    2015-12-01

    The environment surrounding our Solar System has a vast and dynamic structure. As the Sun rounds the Milky Way galaxy, interstellar dust and gas interact with the Sun's outflow of solar wind. A bubble of hot plasma forms around the Sun due to this interaction, called the heliosphere. In order to understand the structure of the heliosphere, observations and simulations must work in tandem. Within the past decade or so, 3D models of the heliosphere have been developed exhibiting non- symmmetric as well as predicting structures such as the hydrogen wall and the IBEX ribbon. In this poster we explore new ways to compute charge-exchange source terms. The charge-exchange process is the coupling mechanism between the MHD and kinetic theories. The understanding of this process is crucial in order to make valuable predictions. Energy dependant cross section terms will aid in settling non-linear affects coupling the intestellar and solar particles. Through these new ways of computing source terms, resolving fine structures in the plasma in the heliopause may be possible. In addition, other non-trivial situations, such as charge-exchange mediated shocks, may be addressed.

  2. Dynamics of the fully stripped ion-hydrogen atom charge exchange process in dense quantum plasmas

    SciTech Connect

    Zhang, Ling-yu; Wan, Jiang-feng; Zhao, Xiao-ying; Xiao, Guo-qing; Duan, Wen-shan; Qi, Xin; Yang, Lei

    2014-09-15

    The plasma screening effects of dense quantum plasmas on charge exchange processes of a fully stripped ion colliding with a hydrogen atom are studied by the classical trajectory Monte Carlo method. The inter-particle interactions are described by the exponential cosine-screened Coulomb potentials. It is found that in weak screening conditions, cross sections increase with the increase of the ionic charge Z. However, in strong screening conditions, the dependence of cross sections on the ionic charge is related to the incident particle energy. At high energies, cross sections show a linear increase with the increase of Z, whereas at low energies, cross sections for Z≥4 become approximately the same. The He{sup 2+} and C{sup 6+} impacting charge exchange cross sections in dense quantum plasmas are also compared with those in weakly coupled plasmas. The interactions are described by the static screened Coulomb potential. It is found that for both He{sup 2+} and C{sup 6+}, the oscillatory screening effects of dense quantum plasmas are almost negligible in weak screening conditions. However, in strong screening conditions, the oscillatory screening effects enhance the screening effects of dense quantum plasmas, and the enhancement becomes more and more significant with the increase of the screening parameter and the ionic charge.

  3. First Observation of the Decay D{sub s}{sup +}{yields}pn

    SciTech Connect

    Athar, S. B.; Patel, R.; Yelton, J.; Rubin, P.; Eisenstein, B. I.; Karliner, I.; Mehrabyan, S.; Lowrey, N.; Selen, M.; White, E. J.; Wiss, J.; Mitchell, R. E.; Shepherd, M. R.; Besson, D.; Pedlar, T. K.; Cronin-Hennessy, D.; Gao, K. Y.; Hietala, J.; Kubota, Y.; Klein, T.

    2008-05-09

    Using e{sup +}e{sup -}{yields}D{sub s}*{sup -}D{sub s}{sup +} data collected near the peak D{sub s} production energy, E{sub cm}=4170 MeV, with the CLEO-c detector, we present the first observation of the decay D{sub s}{sup +}{yields}pn. We measure a branching fraction B(D{sub s}{sup +}{yields}pn)=(1.30{+-}0.36{sub -0.16}{sup +0.12})x10{sup -3}. This is the first observation of a charmed meson decaying into a baryon-antibaryon final state.

  4. What can be Learned from X-ray Spectroscopy Concerning Hot Gas in Local Bubble and Charge Exchange Processes?

    NASA Technical Reports Server (NTRS)

    Snowden, Steve

    2007-01-01

    What can be learned from x-ray spectroscopy in observing hot gas in local bubble and charge exchange processes depends on spectral resolution, instrumental grasp, instrumental energy band, signal-to-nose, field of view, angular resolution and observatory location. Early attempts at x-ray spectroscopy include ROSAT; more recently, astronomers have used diffuse x-ray spectrometers, XMM Newton, sounding rocket calorimeters, and Suzaku. Future observations are expected with calorimeters on the Spectrum Roentgen Gamma mission, and the Solar Wind Charge Exchange (SWCX). The Geospheric SWCX may provide remote sensing of the solar wind and magnetosheath and remote observations of solar CMEs moving outward from the sun.

  5. Yield ratio estimates using regional Pn and Pg from North Korea's underground nuclear explosions

    NASA Astrophysics Data System (ADS)

    Kim, Tae Sung; Kang, Ik-Bum; Kim, Geun-Young

    2009-11-01

    On May 25, 2009 North Korea executed a second nuclear test in the vicinity of P'unggyeri where the first nuclear test was performed on October 9, 2006. Seismic signals from the two underground nuclear explosions (UNEs) are recorded at broadband stations in South Korea and China. Seismic signals from fourteen broadband stations operated by the Korea Institute of Geoscience and Mineral Resources (KIGAM), three broadband stations of Korea Meteorological Administration (KMA) in South Korea and the Mudanjiang station (MDJ) of GSN in China are used for this study. Clear Pn, Pg, and Lg phases propagated over 800 km. The nearly co-located two UNEs and seismic recordings at the same stations enable us to estimate the ratio of the Pn and Pg displacement amplitude spectra between two events by eliminating the path effect. The 95% confidence interval of the mean yield ratio is constrained as a function of the depth ratio and all the estimates of Pn and Pg spectral ratios. The mean yield ratio ranges from 3.45 to 6.36 in the 95% confidence interval based on the depth range estimates by Bennett (2008, 2009).

  6. Determination of 16O and 18O sensitivity factors and charge-exchange processes in low-energy ion scattering

    NASA Astrophysics Data System (ADS)

    Téllez, H.; Chater, R. J.; Fearn, S.; Symianakis, E.; Brongersma, H. H.; Kilner, J. A.

    2012-10-01

    Quantitative analysis in low-energy ion scattering (LEIS) requires an understanding of the charge-exchange processes to estimate the elemental sensitivity factors. In this work, the neutralization of He+ scattered by 18O-exchanged silica at energies between 0.6 and 7 keV was studied. The process is dominated by Auger neutralization for Ei < 0.8 keV. An additional mechanism starts above the reionization threshold. This collision-induced neutralization becomes the dominant mechanism for Ei > 2 keV. The ion fractions P+ were determined for Si and O using the characteristic velocity method to quantify the surface density. The 18O/16O sensitivity ratio indicates an 18% higher sensitivity for the heavier O isotope.

  7. Proposal for studying N* resonances with the pp{yields}pn{pi}{sup +} reaction

    SciTech Connect

    Wu Jiajun; Zou, B. S.; Ouyang Zhen

    2009-10-15

    A theoretical study of the pp{yields}pn{pi}{sup +} reaction for antiproton beam energy from 1 to 4 GeV is made by including contributions from various known N* and {delta}* resonances. It is found that for the beam energy around 1.5 GeV, the contribution of the Roper resonance N{sub (1440)}* produced by the t-channel {sigma} exchange dominates over all other contributions. Since such a reaction can be studied in the forthcoming PANDA experiment at the GSI Facility of Antiproton and Ion Research (FAIR), the reaction will be realistically the cleanest place for studying the properties of the Roper resonance and the best place for looking for other ''missing''N* resonances with large coupling to N{sigma}.

  8. Models of stellar population at high redshift, as constrainedby PN yields and luminosity function

    NASA Astrophysics Data System (ADS)

    Maraston, C.

    The stellar phase of Thermally-Pulsating Asymptotic giant branch is the last major evolutionary stage of intermediate-mass stars which afterwards evolve into planetary nebulae. The TP-AGB phase is affected by mass-loss and instabilities which notoriously make its theoretical modelling uncertain. This review focuses on the effects such modelling has on stellar population models for galaxies, with particular focus on the high-z Universe where galaxies are young and contain a large number of short-living TP-AGB stars. I shall present the models, discuss how different prescriptions for the treatment of the TP-AGB affect the theoretical integrated spectral energy distribution and how these compare to galaxy data, and discuss implications for the PN nebulae luminosity function stemming from the various assumptions. Finally I shall discuss the inclusion of hot evolved stars on stellar population models and how they compare to data for old galaxies at our present time.

  9. Determination of {sup 16}O and {sup 18}O sensitivity factors and charge-exchange processes in low-energy ion scattering

    SciTech Connect

    Tellez, H.; Chater, R. J.; Fearn, S.; Symianakis, E.; Kilner, J. A.; Brongersma, H. H.

    2012-10-08

    Quantitative analysis in low-energy ion scattering (LEIS) requires an understanding of the charge-exchange processes to estimate the elemental sensitivity factors. In this work, the neutralization of He{sup +} scattered by {sup 18}O-exchanged silica at energies between 0.6 and 7 keV was studied. The process is dominated by Auger neutralization for E{sub i} < 0.8 keV. An additional mechanism starts above the reionization threshold. This collision-induced neutralization becomes the dominant mechanism for E{sub i} > 2 keV. The ion fractions P{sup +} were determined for Si and O using the characteristic velocity method to quantify the surface density. The {sup 18}O/{sup 16}O sensitivity ratio indicates an 18% higher sensitivity for the heavier O isotope.

  10. Predicted neutron yield and radioactivity for laser-induced (p,n) reactions in LiF

    SciTech Connect

    Swift, D C; McNaney, J M

    2009-01-30

    Design calculations are presented for a pulsed neutron source comprising polychromatic protons accelerated from a metal foil by a short-pulse laser, and a LiF converter in which (p,n) reactions occur. Although the proton pulse is directional, neutrons are predicted to be emitted relatively isotropically. The neutron spectrum was predicted to be similar to the proton spectrum, but with more neutrons of low energy in the opposite direction to the incident protons. The angular dependence of spectrum and intensity was predicted. The (p,n) reactions generate unstable nuclei which decay predominantly by positron emission to the original {sup 7}Li and {sup 19}F isotopes. For the initial planned experiments using a converter 1mm thick, we predict that 0.1% of the protons will undergo a (p,n) reaction, producing 10{sup 9} neutrons. Ignoring the unreacted protons, neutrons, and prompt gamma emission as excited nuclear states decay, residual positron radioactivity (and production of pairs of 511 keV annihilation photons) is initially 4.2MBq decaying with a half-life of 17.22 s for 6 mins ({sup 19}Ne decays), then 135Bq decaying with a half-life of 53.22 days ({sup 7}Be decays).

  11. Interface pn junction arrays with high yielded grown p-Si microneedles by vapor-liquid-solid method at low temperature

    NASA Astrophysics Data System (ADS)

    Islam, Md. Shofiqul; Ishida, Makoto

    2015-01-01

    In this work we report the fabrication and investigation of the properties of interface pn junction arrays formed at the interface of vertically aligned p-Si microneedles and n-Si substrate. Arrays of boron doped p-Si microneedles were grown on n-Si substrate with the maximum yield of 100% by Au-catalysed vapor-liquid-solid (VLS) growth using in-situ doping with the mixed gas of Si2H6 and B2H6 at temperature less than 700 °C, which is low as compared to the temperature (1100 °C) required by diffusion process to dope Si microneedles after VLS growth. The physical dimension (diameter, length) and position of these p-Si microneedles can be controlled. The variation of growth rate, diameter, conductivity, impurity concentration and hole mobility of these p-Si microneeedles were investigated with the variation of boron doping. The pn junctions, formed with p-Si microneedles having different diameters, were found to exhibit standard diode characteristics. These pn junction embedded Si microneedle arrays might be potential candidate in sensor area applications. Again, low temperature processing would be compatible to integrate these junction arrays with other circuitry on a chip. This work provides one step forward to realize more sophisticated vertical active devices (BJT, MOSFET, etc) with Si microneedles.

  12. Mapping Lateral Pn Attenuation Variation in Asia

    NASA Astrophysics Data System (ADS)

    Yang, X.; Phillips, W. S.; Randall, G. E.

    2009-12-01

    Pn travels most of its path in the uppermost mantle. Mapping of the lateral variation of Pn amplitude attenuation may shed light on the physical and chemical state, and dynamics of the upper mantle. In addition to material attenuation, Pn amplitudes are affected by other factors including the spherical shape of the Earth and Moho topography. In order to derive reliable Pn attenuation, we adopt a frequency-dependent Pn geometric-spreading model, which was designed to account for the effect of the Earth’s sphericity, to correct Pn amplitudes in preparation for attenuation estimation. We obtain physically reasonable attenuation estimates from Pn amplitudes corrected using the new spreading model. Pn amplitudes corrected using the traditional frequency-independent power-law spreading model, on the other hand, yield attenuation estimates that are either too large or negative. Using properly geometric-spreading corrected Pn amplitudes, we conducted attenuation tomography and developed 2D Pn attenuation models at multiple frequencies from 0.5 Hz to 8 Hz for Asia. Overall Pn attenuation patterns correlate, to some degree, with our current knowledge of the state of the upper mantle of the region. We see consistent low attenuation in cratonic regions and high attenuation along the western Pacific Ocean. The attenuation pattern in the Tibetan Plateau region seems to be frequency dependent with high attenuation around 1 Hz and low attenuation at 8 Hz. Application of the attenuation model to the nuclear-explosion discrimination problem leads to appreciable improvements of the discriminant compared with currently adopted method.

  13. PnMPI

    SciTech Connect

    Schulz, Martin; de Supinski, Bronis R.

    2008-02-01

    PnMPI is a tool infrastructure for parallel programs implemented using the message passing interface (MPI). It enables users to dynamically assemble multiple tools, both existing and newly developed ones, into a single tool chain and to execute them concurrently. This provides new options for scalable tools designs including (but not concurrently. This provides new options for scalable tool designs including (but not limited to) the transparent virtualization of MPI environments of an application. In addition, PnMPI allows tools to export support routines to other tools. This promotes a separation of tasks between tools which leads to enhanced tool modularity. PnMPI has been implemented for a variety of platforms including Linux and AIX clusters, and a static version of PnMPI is available on Blue Gene/L.

  14. Charge-Exchange Processes of Titanium-Doped Aluminate Crystals

    NASA Astrophysics Data System (ADS)

    Wong, Wing Cheong

    1995-01-01

    Titanium exists in more than one charge state in the aluminate crystals: it is stable as Ti^ {3+} and Ti^{4+}. Other than the intense Ti^{4+ } absorption, a ubiquitous absorption/luminescence excitation band in the UV region is identified as a titanium -bound exciton in Al_2rm O_3, Y_3Al_5rm O_{12}, {rm YAlO}_3, MgAl_2O _4, and LaMgAl_{11} {rm O}_{19}. One -step and two-step photoconductivities of Ti^ {3+} are measured and compared. While the selectivity of the two-step process is demonstrated, its use in locating the energy threshold is hampered by the small Franck-Condon factor for the transition between the Ti^{3+} ^2{ rm E} excited state and Ti^ {4+}. The titanium-bound exciton band, together with the one-step photocurrent signal, makes it possible to determine the photoionization energy threshold accurately. The charge-transfer transition energy thresholds of Ti^{4+} are obtained from the emission and the luminescence excitation spectra. Locally and non-locally charge compensated Ti^{4+ } are found in Al_2{rm O}_3. The luminescence kinetics for the two kinds of Ti^{4+} are well explained by a three-level system with a lower triplet excited state and a higher singlet excited state. These charge-exchange threshold energies can be deduced from the Born-Haber thermodynamical cycle. The electrostatic site potentials are calculated and from it, the calculated photoionization and charge-transfer energy thresholds are found to be consistent with the experimental results. The deficiency of this model is pointed out and possible improvement is discussed. Quantitatively, the sum of the two charge-exchange energy thresholds is close to the band-gap energy of the host crystal. This offers a convenient way for material characterization. Provided that any two of the three quantities (band-gap energy, photoionization energy threshold, and charge-transfer transition energy threshold) have been found, the third quantity can be calculated. In addition, the trapping of charge carriers is investigated with thermally-stimulated conductivity and thermally-stimulated luminescence. The identities of the electron traps and hole traps are deduced from the results of several differently doped Al_2{ rm O}_3..

  15. Impurity charge-exchange processes processes in Tokamak plasmas

    NASA Astrophysics Data System (ADS)

    Puiatti, M. E.; Breton, C.; Michelis, C.; Mattioll, M.

    1981-02-01

    Charge exchange reactions between multiply charged impurity ions and neutral hydrogen isotopes were considered. Ionization equilibrium and radiative losses were evaluated for oxygen and iron in the presence of either thermal or beam neutrals. The influence of thermal neutrals on recently reported results from chemically heated TFR discharges is also discussed.

  16. PN lock indicator for dithered PN code tracking loop

    NASA Technical Reports Server (NTRS)

    Carson, L. M. (Inventor)

    1981-01-01

    In a delay-lock one-delta (+or - 1/2 chip) dithered PN code tracking loop, an indication of lock in the PN code tracking loop is provided by delaying the dithered local PN code by a half chip to produce a +0, -1 dithered PN code that is then multiplied with the received PN-spread IF signal to produce a signal proportional to the correlation of this dithered code offset from the received code. The correlation signal is bandpass filtered, amplified with AGC control, and square-law detected to obtain a dc signal proportional to the degree of correlation. The dc signal is multiplied by the dithering control signal to effectivity substract noise voltage from the lock correlation signal which is then compared with a PN lock status signal.

  17. Combined GMSK Communications and PN Ranging

    NASA Technical Reports Server (NTRS)

    Orr, Richard; Divsalar, Dariush

    2008-01-01

    A document discusses a method by which GMSK (Gaussian minimum shift keying) modulation and a pseudonoise (PN) ranging signal may be combined. By isolating the in-phase and quadrature components after carrier lock, and extracting their low-pass and band-pass filtered components, there is enough information available to both demodulate data and track the PN signal. The proposed combined GMSK communications and PN ranging is one potential approach to address emerging requirements for simultaneous high data rate communications from and tracking of vehicles in deep space or at the Moon.

  18. Fully integrated litho aware PnR design solution

    NASA Astrophysics Data System (ADS)

    Beylier, Charlotte; Moyroud, Clement; Bernard Granger, Fabrice; Robert, Frederic; Yesilada, Emek; Trouiller, Yorick; Marin, Jean-Claude

    2012-03-01

    Design For Manufacturing (DFM) is becoming essential to ensure good yield for deep sub micron technologies. As design rules cannot anticipate all manufacturing marginalities resulting from problematic 2D patterns, the latter has to be addressed at design level through DFM tools. To deploy DFM strategy on back end levels, STMicroelectronics has implemented a CAD solution for lithographic hotspots search and repair. This allows the detection and the correction, at the routing step, of hotspots derived from lithographic simulation after OPC treatment. The detection of hotspots is based on pattern matching and the repair uses local reroute ability already implemented in Place and Route (PnR) tools. This solution is packaged in a Fast LFD Kit for 28 nm technology and fully integrated in PnR platforms. It offers a solution for multi suppliers CAD vendors routed designs. To ensure a litho friendly repair, the flow integrates a step of local simulation of the rerouted zones. This paper explains the hotspots identification, their detection through pattern matching and repair in the PnR platform. Run time, efficiency rate, timing and RC parasitic impacts are also analyzed.

  19. Teleseismic Pn Coda Modeled as Crustal Scattering

    NASA Astrophysics Data System (ADS)

    Nielsen, L.; Thybo, H.; Morozov, I. B.; Solodilov, L.

    2002-12-01

    Teleseismic Pn arrivals with a long, high-amplitude coda are observed to offsets larger than 3000 km along the Peaceful Nuclear Explosion (PNE) seismic profiles Quartz and Ruby, which were recorded in the former Soviet Union. Analysis of the observed data shows that the teleseismic Pn contains significant amounts of energy in the low- (0-2.5 Hz), mid- (2.5-5.0 Hz) and high-frequency (5.0-10 Hz) ranges. We model the teleseismic Pn arrivals as multiple sub-Moho refractions, which travel over large distances due to a positive vertical upper mantle velocity gradient, which is characteristic for the study area. Crustal scattering is found to fully account for the teleseismic Pn coda. Tests show that it is not necessary to include upper mantle heterogeneity in the seismic models in order to match the key characteristics of the teleseismic Pn. Our modeling results are based on two-dimensional visco-elastic finite-difference seismic wavefield simulations in 2000 km long and 250 km deep models of the crustal-upper mantle system. The computationally demanding calculations are facilitated by the use of multiprocessor supercomputer systems. Our preferred model of crustal scattering is in agreement with high-resolution wide-angle and normal-incidence seismic data sets collected in other areas, which typically show reflective crustal intervals and an almost transparent uppermost mantle down to about 80-100 km depth.

  20. Photocurrent Measurements of Carbon Nanotube PN Junctions

    NASA Astrophysics Data System (ADS)

    Gabor, Nathaniel; Zhong, Zhaohui; Bosnick, Ken; Park, Jiwoong; McEuen, Paul

    2007-03-01

    Gated p-n junctions in semiconducting nanotubes have recently drawn much attention for their electronic and optoelectronic characteristics [1,2,3]. We investigate the photocurrent response at a nanotube gated p-n junction using a focused laser illumination source. We find that the photocurrent at zero source-drain bias increases linearly with optical power for the component of light along the length of the nanotube. Scanned photocurrent imaging demonstrates that carrier generation occurs primarily between the p- and n- type segments of the device. Measurements in an optical cryostat down to 4K reveal large photoresponse and step-like structure in the reverse bias photocurrent. These results show that nanotube p-n junctions are highly sensitive, nanoscale photodetectors. [1] J.U. Lee et al, App. Phys. Lett. 85, 145 (2004). [2] J.U. Lee, App. Phys. Lett. 87, 073101 (2005). [3] K. Bosnick et al, App. Phys. Lett. 89, 163121 (2006).

  1. The dynamic organic p-n junction.

    PubMed

    Matyba, Piotr; Maturova, Klara; Kemerink, Martijn; Robinson, Nathaniel D; Edman, Ludvig

    2009-08-01

    Static p-n junctions in inorganic semiconductors are exploited in a wide range of today's electronic appliances. Here, we demonstrate the in situ formation of a dynamic p-n junction structure within an organic semiconductor through electrochemistry. Specifically, we use scanning kelvin probe microscopy and optical probing on planar light-emitting electrochemical cells (LECs) with a mixture of a conjugated polymer and an electrolyte connecting two electrodes separated by 120 microm. We find that a significant portion of the potential drop between the electrodes coincides with the location of a thin and distinct light-emission zone positioned >30 microm away from the negative electrode. These results are relevant in the context of a long-standing scientific debate, as they prove that electrochemical doping can take place in LECs. Moreover, a study on the doping formation and dissipation kinetics provides interesting detail regarding the electronic structure and stability of the dynamic organic p-n junction, which may be useful in future dynamic p-n junction-based devices.

  2. Origin of teleseismic Pn coda: crustal scattering

    NASA Astrophysics Data System (ADS)

    Nielsen, L.; Thybo, H.

    2003-04-01

    Teleseismic Pn arrivals with a long, high-amplitude coda, are observed to offsets larger than 3000 km along the Peaceful Nuclear Explosion (PNE) seismic profile Quartz, which was recorded in the former Soviet Union. Analysis of the observed data shows that the teleseismic Pn contains significant amounts of energy in the low- (0-2.5 Hz), mid- (2.5-5.0 Hz) and high-frequency (5.0-10 Hz) ranges. The length of the coda wavetrain seems to increase with increasing frequency. The teleseismic Pn arrivals are interpreted as multiple sub-Moho refractions, which travel over large distances due to a positive vertical upper mantle velocity gradient, which is characteristic for the study area. From wave field modelling, we find that crustal scattering fully accounts for the teleseismic Pn coda. It is not necessary to include upper mantle heterogeneity in the seismic models in order to match the key characteristics of the teleseismic Pn. Our modelling results are based on two-dimensional visco-elastic finite-difference simulations of the seismic wave field in 2000 km long and 250 km deep models of the crust-upper mantle system. The computationally demanding calculations are facilitated by the use of multiprocessor supercomputers. Our preferred model of crustal scattering is in agreement with high-resolution wide-angle and normal-incidence seismic data sets collected in different areas, which typically show reflective crustal intervals and an almost transparent uppermost mantle down to about 20-25 s two-way travel time (80-100 km depth).

  3. On the auto and cross correlation of PN sequences

    NASA Technical Reports Server (NTRS)

    Morakis, J. C.

    1969-01-01

    The autocorrelation and crosscorrelation properties of pseudorandom (PN) sequences are analyzed by using some important properties of PN sequences. These properties make this discussion understandable without the need of linear algebraic approach. The analysis is followed by some experimental results.

  4. Predicting NCLEX-PN success with the HESI Exit Exam.

    PubMed

    Young, Anne; Willson, Pamela

    2010-01-01

    Surveys were mailed to directors of 72 randomly selected practical nursing (PN) schools that administered Elsevier's HESI Exit Exam for Practical Nurses (E2-PN) during the 2006-2007 academic year. Data were collected regarding students' NCLEX-PN outcomes and the schools' benchmarking and remediation policies. The first version of the E2-PN was 99.48% accurate in predicting NCLEX-PN success. Versions two and three of the E2-PN, which were administered to students who were remediated because they did not achieve the faculty-designated benchmark, were also highly accurate in predicting NCLEX-PN success. Most faculties set 850 as their school's E2-PN benchmark, and 73% of the respondents required remediation for students who did not achieve the benchmark score. The most frequently cited remediation strategy was tutoring.

  5. TDRSS telecommunications system, PN code analysis

    NASA Technical Reports Server (NTRS)

    Dixon, R.; Gold, R.; Kaiser, F.

    1976-01-01

    The pseudo noise (PN) codes required to support the TDRSS telecommunications services are analyzed and the impact of alternate coding techniques on the user transponder equipment, the TDRSS equipment, and all factors that contribute to the acquisition and performance of these telecommunication services is assessed. Possible alternatives to the currently proposed hybrid FH/direct sequence acquisition procedures are considered and compared relative to acquisition time, implementation complexity, operational reliability, and cost. The hybrid FH/direct sequence technique is analyzed and rejected in favor of a recommended approach which minimizes acquisition time and user transponder complexity while maximizing probability of acquisition and overall link reliability.

  6. A Pn Spreading Model Constrained with Observed Amplitudes in Asia

    DTIC Science & Technology

    2011-09-01

    of observed Pn amplitudes from the tectonically active regions of Asia to evaluate the performance of Y2007 and to develop new, observation-based...a set of observed Pn amplitudes from the tectonically active regions of Asia to evaluate the performance of Y2007 and to develop new observation-based...tomographic inversions to map the lateral Pn attenuation variation. RESEARCH ACCOMPLISHED Introduction It has long been recognized that the

  7. Mapping Pn amplitude spreading and attenuation in Asia

    SciTech Connect

    Yang, Xiaoning; Phillips, William S; Stead, Richard J

    2010-12-06

    Pn travels most of its path in the mantle lid. Mapping the lateral variation of Pn amplitude attenuation sheds light on material properties and dynamics of the uppermost region of the mantle. Pn amplitude variation depends on the wavefront geometric spreading as well as material attenuation. We investigated Pn geometric spreading, which is much more complex than a traditionally assumed power-law spreading model, using both synthetic and observed amplitude data collected in Asia. We derived a new Pn spreading model based on the formulation that was proposed previously to account for the spherical shape of the Earth (Yang et. al., BSSA, 2007). New parameters derived for the spreading model provide much better correction for Pn amplitudes in terms of residual behavior. Because we used observed Pn amplitudes to construct the model, the model incorporates not only the effect of the Earth's spherical shape, but also the effect of potential upper-mantle velocity gradients in the region. Using the new spreading model, we corrected Pn amplitudes measured at 1, 2, 4 and 6 Hz and conducted attenuation tomography. The resulting Pn attenuation model correlates well with the regional geology. We see high attenuation in regions such as northern Tibetan Plateau and the western Pacific subduction zone, and low attenuation for stable blocks such as Sichuan and Tarim basins.

  8. Measurement of χcj decaying into pn̄π⁻ and pn̄π⁻π⁰

    DOE PAGES

    Ablikim, M.; Achasov, M. N.; Albayrak, O.; ...

    2012-09-26

    Using a data sample of 1.06×10⁸ ψ' events collected with the BESIII detector in 2009, the branching fractions of χcJ→pn̄π⁻ and χcJ→pn̄π⁻π⁰ (J=0, 1, 2) are measured. (Throughout the text, inclusion of charge conjugate modes is implied if not stated otherwise.) The results for χc⁰→pn̄π⁻ and χc²→pn̄π⁻ are consistent with, but much more precise than, those of previous measurements. The decays of χc1→pn̄π⁻ and χcJ→pn̄π⁻π⁰ are observed for the first time.

  9. Novel pneumoviruses (PnVs): Evolution and inflammatory pathology

    SciTech Connect

    Glineur, Stephanie F.; Renshaw, Randall W.; Percopo, Caroline M.; Dyer, Kimberly D.; Dubovi, Edward J.; Domachowske, Joseph B.; Rosenberg, Helene F.

    2013-09-01

    A previous report of a novel pneumovirus (PnV) isolated from the respiratory tract of a dog described its significant homology to the rodent pathogen, pneumonia virus of mice (PVM). The original PnV–Ane4 pathogen replicated in and could be re-isolated in infectious state from mouse lung but elicited minimal mortality compared to PVM strain J3666. Here we assess phylogeny and physiologic responses to 10 new PnV isolates. The G/glycoprotein sequences of all PnVs include elongated amino-termini when compared to the characterized PVMs, and suggest division into groups A and B. While we observed significant differences in cytokine production and neutrophil recruitment to the lungs of BALB/c mice in response to survival doses (50 TCID{sub 50} units) of representative group A (114378-10-29-KY-F) and group B (7968-11-OK) PnVs, we observed no evidence for positive selection (dN>dS) among the PnV/PnV, PVM/PnV or PVM/PVM G/glycoprotein or F/fusion protein sequence pairs. - Highlights: • We consider ten novel isolates of the pneumovirus (PnV) first described by Renshaw and colleagues. • The G/glycoprotein sequences of all PnVs include elongated amino-termini when compared to PVM. • We detect cytokine production and neutrophil recruitment to the lungs of mice in response to PnV. • We observed no evidence for positive selection (dN>dS) among the gene sequence pairs.

  10. Studies of silicon PN junction solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.

    1975-01-01

    Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed.

  11. Field-effect P-N junction

    DOEpatents

    Regan, William; Zettl, Alexander

    2015-05-05

    This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

  12. Single P-N junction tandem photovoltaic device

    DOEpatents

    Walukiewicz, Wladyslaw; Ager, III, Joel W.; Yu, Kin Man

    2011-10-18

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  13. Single P-N junction tandem photovoltaic device

    DOEpatents

    Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

    2012-03-06

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  14. Pn anisotropic tomography and mantle dynamics beneath China

    NASA Astrophysics Data System (ADS)

    Zhou, Zhigang; Lei, Jianshe

    2016-08-01

    We present a new high-resolution Pn anisotropic tomographic model of the uppermost mantle beneath China inferred from 52,061 Pn arrival-time data manually picked from seismograms recorded at provincial seismic stations in China and temporary stations in Tibet and the Tienshan orogenic belt. Significant features well correlated with surface geology are revealed and provide new insights into the deep dynamics beneath China. Prominent high Pn velocities are visible under the stable cratonic blocks (e.g., the Tarim, Junngar, and Sichuan basins, and the Ordos block), whereas remarkable low Pn velocities are observed in the tectonically active areas (e.g., Pamir, the Tienshan orogenic belt, central Tibet and the Qilian fold belt). A distinct N-S trending low Pn velocity zone around 86°E is revealed under the rift running from the Himalayan block through the Lhasa block to the Qiangtang block, which indicates the hot material upwelling due to the breaking-off of the subducting Indian slab. Two N-S trending low Pn velocity belts with an approximate N-S Pn fast direction along the faults around the Chuan-Dian diamond block suggest that these faults may serve as channels of mantle flow from Tibet. The fast Pn direction changes from N-S in the north across 27°N to E-W in the south, which may reflect different types of mantle deformation. The anisotropy in the south could be caused by the asthenospheric flow resulted from the eastward subduction of the Indian plate down to the mantle transition zone beneath the Burma arc. Across the Talas-Fergana fault in the Tienshan orogenic belt, an obvious difference in velocity and anisotropy is revealed. To the west, high Pn velocities and an arc-shaped fast Pn direction are observed, implying the Indo-Asian collision, whereas to the east low Pn velocities and a range-parallel Pn fast direction are imaged, reflecting the northward underthrusting of the Tarim lithosphere and the southward underthrusting of the Kazakh lithosphere. In

  15. Crystal, magnetic, and electronic structures, and properties of new BaMnPnF (Pn = As, Sb, Bi).

    PubMed

    Saparov, Bayrammurad; Singh, David J; Garlea, Vasile O; Sefat, Athena S

    2013-01-01

    New BaMnPnF (Pn = As, Sb, Bi) are synthesized by stoichiometric reaction of elements with BaF₂. They crystallize in the P4/nmm space group, with the ZrCuSiAs-type structure, as indicated by X-ray crystallography. Electrical resistivity results indicate that Pn = As, Sb, and Bi are semiconductors with band gaps of 0.73 eV, 0.48 eV and 0.003 eV (extrinsic value), respectively. Powder neutron diffraction reveals a G-type antiferromagnetic order below T(N) = 338(1) K for Pn = As, and below T(N) = 272(1) K for Pn = Sb. Magnetic susceptibility increases with temperature above 100 K for all the materials. Density functional calculations find semiconducting antiferromagnetic compounds with strong in-plane and weaker out-of-plane exchange coupling that may result in non-Curie Weiss behavior above TN. The ordered magnetic moments are 3.65(5) μ(B)/Mn for Pn = As, and 3.66(3) μ(B)/Mn for Pn = Sb at 4 K, as refined from neutron diffraction experiments.

  16. Analytical theory of the space-charge region of lateral p-n junctions in nanofilms

    SciTech Connect

    Gurugubelli, Vijaya Kumar Karmalkar, Shreepad

    2015-07-21

    There is growing interest in fabricating conventional semiconductor devices in a nanofilm which could be a 3D material with one reduced dimension (e.g., silicon-on-insulator (SOI) film), or single/multiple layers of a 2D material (e.g., MoS{sub 2}), or a two dimensional electron gas/two dimensional hole gas (2DEG/2DHG) layer. Lateral p-n junctions are essential parts of these devices. The space-charge region electrostatics in these nanofilm junctions is strongly affected by the surrounding field, unlike in bulk junctions. Current device physics of nanofilms lacks a simple analytical theory of this 2D electrostatics of lateral p-n junctions. We present such a theory taking into account the film's thickness, permittivity, doping, interface charge, and possibly different ambient permittivities on film's either side. In analogy to the textbook theory of the 1D electrostatics of bulk p-n junctions, our theory yields simple formulas for the depletion width, the extent of space-charge tails beyond this width, and the screening length associated with the space-charge layer in nanofilm junctions; these formulas agree with numerical simulations and measurements. Our theory introduces an electrostatic thickness index to classify nanofilms into sheets, bulk and intermediate sized.

  17. First observation of the decay Ds+-->pn.

    PubMed

    Athar, S B; Patel, R; Yelton, J; Rubin, P; Eisenstein, B I; Karliner, I; Mehrabyan, S; Lowrey, N; Selen, M; White, E J; Wiss, J; Mitchell, R E; Shepherd, M R; Besson, D; Pedlar, T K; Cronin-Hennessy, D; Gao, K Y; Hietala, J; Kubota, Y; Klein, T; Lang, B W; Poling, R; Scott, A W; Zweber, P; Dobbs, S; Metreveli, Z; Seth, K K; Tomaradze, A; Libby, J; Powell, A; Wilkinson, G; Ecklund, K M; Love, W; Savinov, V; Lopez, A; Mendez, H; Ramirez, J; Ge, J Y; Miller, D H; Shipsey, I P J; Xin, B; Adams, G S; Anderson, M; Cummings, J P; Danko, I; Hu, D; Moziak, B; Napolitano, J; He, Q; Insler, J; Muramatsu, H; Park, C S; Thorndike, E H; Yang, F; Artuso, M; Blusk, S; Khalil, S; Li, J; Mountain, R; Nisar, S; Randrianarivony, K; Sultana, N; Skwarnicki, T; Stone, S; Wang, J C; Zhang, L M; Bonvicini, G; Cinabro, D; Dubrovin, M; Lincoln, A; Naik, P; Rademacker, J; Asner, D M; Edwards, K W; Reed, J; Briere, R A; Ferguson, T; Tatishvili, G; Vogel, H; Watkins, M E; Rosner, J L; Alexander, J P; Cassel, D G; Duboscq, J E; Ehrlich, R; Fields, L; Gibbons, L; Gray, R; Gray, S W; Hartill, D L; Heltsley, B K; Hertz, D; Hunt, J M; Kandaswamy, J; Kreinick, D L; Kuznetsov, V E; Ledoux, J; Mahlke-Krüger, H; Mohapatra, D; Onyisi, P U E; Patterson, J R; Peterson, D; Riley, D; Ryd, A; Sadoff, A J; Shi, X; Stroiney, S; Sun, W M; Wilksen, T

    2008-05-09

    Using e+e--->Ds*-Ds+ data collected near the peak Ds production energy, Ecm=4170 MeV, with the CLEO-c detector, we present the first observation of the decay Ds+-->pn. We measure a branching fraction B(Ds+-->pn)=(1.30+/-0.36(-0.16)+0.12)x10(-3). This is the first observation of a charmed meson decaying into a baryon-antibaryon final state.

  18. Array analysis of regional Pn and Pg wavefields from the Nevada Test Site

    SciTech Connect

    Leonard, M.A. . Dept. of Geology and Geophysics Lawrence Berkeley Lab., CA )

    1991-06-01

    Small-aperture high-frequency seismic arrays with dimensions of a few kilometers or less, can improve our ability to seismically monitor compliance with a low-yield Threshold Test Ban Treaty. This work studies the characteristics and effectiveness of array processing of the regional Pn and Pg wavefields generated by underground nuclear explosions at the Nevada Test Site. Waveform data from the explosion HARDIN (m{sub b} = 5.5) is recorded at a temporary 12-element, 3-component, 1.5 km-aperture array sited in an area of northern Nevada. The explosions VILLE (m{sub b} = 4.4) and SALUT (m{sub b} = 5.5) are recorded at two arrays sited in the Mojave desert, one a 96-element vertical-component 7 km-aperture array and the other a 155-element vertical-component 4 km-aperture array. Among the mean spectra for the m{sub b} = 5.5 events there are significant differences in low-frequency spectral amplitudes between array sites. The spectra become nearly identical beyond about 6 Hz. Spectral ratios are used to examine seismic source properties and the partitioning of energy between Pn and Pg. Frequency-wavenumber analysis at the 12-element array is used to obtain estimates of signal gain, phase velocity, and source azimuth. This analysis reveals frequency-dependent biases in velocity and azimuth of the coherent Pn and Pg arrivals. Signal correlation, the principal factor governing array performance, is examined in terms of spatial coherence estimates. The coherence is found to vary between the three sites. In all cases the coherence of Pn is greater than that for Pg. 81 refs., 92 figs., 5 tabs.

  19. Hybrid pn-junction solar cells based on layers of inorganic nanocrystals and organic semiconductors: optimization of layer thickness by considering the width of the depletion region.

    PubMed

    Saha, Sudip K; Guchhait, Asim; Pal, Amlan J

    2014-03-07

    We report the formation and characterization of hybrid pn-junction solar cells based on a layer of copper diffused silver indium disulfide (AgInS2@Cu) nanoparticles and another layer of copper phthalocyanine (CuPc) molecules. With copper diffusion in the nanocrystals, their optical absorption and hence the activity of the hybrid pn-junction solar cells was extended towards the near-IR region. To decrease the particle-to-particle separation for improved carrier transport through the inorganic layer, we replaced the long-chain ligands of copper-diffused nanocrystals in each monolayer with short-ones. Under illumination, the hybrid pn-junctions yielded a higher short-circuit current as compared to the combined contribution of the Schottky junctions based on the components. A wider depletion region at the interface between the two active layers in the pn-junction device as compared to that of the Schottky junctions has been considered to analyze the results. Capacitance-voltage characteristics under a dark condition supported such a hypothesis. We also determined the width of the depletion region in the two layers separately so that a pn-junction could be formed with a tailored thickness of the two materials. Such a "fully-depleted" device resulted in an improved photovoltaic performance, primarily due to lessening of the internal resistance of the hybrid pn-junction solar cells.

  20. High resolution scanning optical imaging of a frozen polymer p-n junction

    NASA Astrophysics Data System (ADS)

    AlTal, Faleh; Gao, Jun

    2016-09-01

    Semiconductor homojunctions such as p-n or p-i-n junctions are the building blocks of many semiconductor devices such as diodes, photodetectors, transistors, or solar cells. The determination of junction depletion width is crucial for the design and realization of high-performance devices. The polymer analogue of a conventional p-n or p-i-n junction can be created by in situ electrochemical doping in a polymer light-emitting electrochemical cell (LEC). As a result of doping and junction formation, the LECs possess some highly desirable device characteristics. The LEC junction, however, is still poorly understood due to the difficulties of characterizing a dynamic-junction device. Here, we report concerted optical-beam-induced-current (OBIC) and scanning photoluminescence (PL) imaging studies of planar LECs that have been frozen to preserve the doping profile. By optimizing the cell composition, the electrode work function, and the turn-on conditions, we realize a long, straight, and highly emissive p-n junction with an interelectrode spacing of 700 μm. The extremely broad planar cell allows for time-lapse fluorescence imaging of the in situ electrochemical doping process and detailed scanning of the entire cell. A total of eighteen scans at seven locations along the junction have been performed using a versatile, custom cryogenic laser scanning apparatus. The Gaussian OBIC profiles yield an average 1/e2 junction width of only 1.5 μm, which is the smallest ever reported in a planar LEC. The controlled dedoping of the frozen device via warming cycles leads to an unexpectedly narrower OBIC profile, suggesting the presence and disappearance of fine structures at the edges of the frozen p-n junction. The results reported in this work provide new insight into the nature and structure of the LEC p-n junction. Since only about 0.2% of the entire device area is photoactive in response to an incident optical beam, the effective junction width (or volume) must be

  1. Bounds on the Information Carrying Capacity of Pn Waves

    SciTech Connect

    Harris, D B

    2008-12-01

    Upper and lower bounds on the capacity of the Pn wave to transmit information about source identity are developed using models and measurements of Pn spatial signal structure across the ARCES array. The results show a very significant increase in information carrying capacity when contrasting observed propagation conditions with idealized free-space propagation. In essence, scattering greatly increases Pn channel capacity. As shown in a previous contribution, this increase in information can be captured with matched field calibrations and exploited to resolve sources more closely spaced than the Rayleigh resolution limit. These results mirror practices in cellular telephones that use arrays at the transmitter and receiver to exploit scattering for increased channel capacity.

  2. Studies of silicon p-n junction solar cells

    NASA Technical Reports Server (NTRS)

    Neugroschel, A.; Lindholm, F. A.

    1979-01-01

    To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

  3. Electron optics with p-n junctions in ballistic graphene

    NASA Astrophysics Data System (ADS)

    Chen, Shaowen; Han, Zheng; Elahi, Mirza M.; Habib, K. M. Masum; Wang, Lei; Wen, Bo; Gao, Yuanda; Taniguchi, Takashi; Watanabe, Kenji; Hone, James; Ghosh, Avik W.; Dean, Cory R.

    2016-09-01

    Electrons transmitted across a ballistic semiconductor junction are expected to undergo refraction, analogous to light rays across an optical boundary. In graphene, the linear dispersion and zero-gap band structure admit highly transparent p-n junctions by simple electrostatic gating. Here, we employ transverse magnetic focusing to probe the propagation of carriers across an electrostatically defined graphene junction. We find agreement with the predicted Snell’s law for electrons, including the observation of both positive and negative refraction. Resonant transmission across the p-n junction provides a direct measurement of the angle-dependent transmission coefficient. Comparing experimental data with simulations reveals the crucial role played by the effective junction width, providing guidance for future device design. Our results pave the way for realizing electron optics based on graphene p-n junctions.

  4. Experimental investigation of the reaction of helium ions with dimethyl ether: stereodynamics of the dissociative charge exchange process.

    PubMed

    Cernuto, Andrea; Tosi, Paolo; Martini, Luca Matteo; Pirani, Fernando; Ascenzi, Daniela

    2017-03-09

    The fate of dimethyl ether (DME, CH3OCH3) in collisions with He(+) ions is of high relevance for astrochemical models aimed at reproducing the abundances of complex organic molecules in the interstellar medium. Here we report an investigation on the reaction of He(+) ions with DME carried out using a Guided Ion Beam Mass Spectrometer (GIB-MS), which allows the measurement of reactive cross-sections and branching ratios (BRs) as a function of the collision energy. We obtain insights into the dissociative charge (electron) exchange mechanism by investigating the nature of the non-adiabatic transitions between the relevant potential energy surfaces (PESs) in an improved Landau-Zener approach. We find that the large interaction anisotropy could induce a pronounced orientation of the polar DME molecule in the electric field generated by He(+) so that at short distances the collision complex is confined within pendular states, a particular case of bending motion, which gives rise to intriguing stereodynamic effects. The positions of the intermolecular potential energy curve crossings indicate that He(+) captures an electron from an inner valence orbital of DME, thus causing its dissociation. In addition to the crossing positions, the symmetry of the electron density distribution of the involved DME orbitals turns out to be a further major point affecting the probability of electron transfer. Thus, the anisotropy of the intermolecular interaction and the electron densities of the orbitals involved in the reaction are the key "ingredients" for describing the dynamics of this dissociative charge transfer.

  5. Transition metal dichalcogenide heterojunction PN diode toward ultimate photovoltaic benefits

    NASA Astrophysics Data System (ADS)

    Ahn, Jongtae; Jeon, Pyo Jin; Raza, Syed Raza Ali; Pezeshki, Atiye; Min, Sung-Wook; Hwang, Do Kyung; Im, Seongil

    2016-12-01

    Recently, two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors as van der Waals (vdW) materials have attracted much attention from researchers. Among many 2D TMDC materials, a few layer-thin molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) have been most intensively studied respectively as 2D n- and p-type semiconductors. Here, we have fabricated vertical vdW heterojunction n-MoS2/p-WSe2 diode with a few tens nm-thick layers by using vertically-sandwiched ohmic terminals, so that no quasi neutral region may exist between two terminals. As a result, we obtained high photo responsivity at zero volt without any electric power, and it appears comparable to those of commercially-optimized Si PN diode. Photo-voltage output of 0.3 V was easily obtained from our vdW PN diode as open circuit voltage, and can be doubled up to 0.6 V by using two PN diodes. These beneficial photovoltaic results from vdW PN diode were directly applied to PV switching dynamics and transistor photo gating, for the first time. We regard that our vdW n-MoS2/p-WSe2 heterojunction diode could maximize its photovoltaic energy benefits with optimized TMDC thicknesses.

  6. High Temperature Thermoelectric Device Concept Using Large Area PN Junctions

    NASA Astrophysics Data System (ADS)

    Chavez, R.; Angst, S.; Hall, J.; Stoetzel, J.; Kessler, V.; Bitzer, L.; Maculewicz, F.; Benson, N.; Wiggers, H.; Wolf, D.; Schierning, G.; Schmechel, R.

    2014-06-01

    A new high temperature thermoelectric device concept using large area nanostructured silicon p-type and n-type ( PN) junctions is presented. In contrast to conventional thermoelectric generators, where the n-type and p-type semiconductors are connected electrically in series and thermally in parallel, we experimentally demonstrate a device concept in which a large area PN junction made from highly doped densified silicon nanoparticles is subject to a temperature gradient parallel to the PN interface. In the proposed device concept, the electrical contacts are made at the cold side eliminating the hot side substrate and difficulties that go along with high temperature electrical contacts. This concept allows temperature gradients greater than 300 K to be experimentally applied with hot side temperatures larger than 800 K. Electronic properties of the PN junctions and power output characterizations are presented. A fundamental working principle is discussed using a particle network model with temperature and electric fields as variables, and which considers electrical conductivity and thermal conductivity according to Fourier's law, as well as Peltier and Seebeck effects.

  7. Predictors of NCLEX-PN Success for Practical Nursing Students

    ERIC Educational Resources Information Center

    Eickhoff, Mary Ann

    2016-01-01

    There is currently a nursing shortage in the United States. By 2022, the Bureau of Labor Statistics (BLS) expects, the number of job openings for Practical Nurses (PN) will be 168,500, an increase of 25% over 2012 (BLS, 2014). Nursing education does not currently meet present, much less future needs. Nursing programs have limited space; according…

  8. The Oklahoma PN/ADN Articulation Project Report.

    ERIC Educational Resources Information Center

    Oklahoma State Regents for Higher Education, Oklahoma City.

    In response to a critical nursing shortage in the state of Oklahoma, the Oklahoma Practical Nursing (PN)/Associate Degree Nursing (ADN) Articulation Project Coordinating Committee was formed in spring 1990 to develop a proposal for program articulation. A curriculum matrix was designed and adopted for use by five regional subcommittees which…

  9. SMARTS Thermal Architecture for PnPSat-2

    NASA Astrophysics Data System (ADS)

    Bugby, D. C.; Zimbeck, W. R.; Preble, J. C.; Kroliczek, E. J.

    2010-01-01

    This paper describes an integrated thermal-mechanical architecture for responsive small satellites that combines the intrinsic thermal management capabilities of the Satellite Modular and Reconfigurable Thermal System (SMARTS) with the modular, quick assembly mechanical design offered by the Plug-and-Play Satellite-2 (PnPSat-2) structure. PnPSat-2 is the second generation Plug and Play satellite bus. SMARTS and PnPSat-2 are technology development programs funded by the Air Force Research Laboratory (AFRL) Space Vehicles Directorate at Kirtland AFB, NM. To meet the three-tiered responsive space needs of the DoD, varying levels of responsiveness from immediate (Tier 1), to days (Tier 2), to months (Tier 3) are needed. SMARTS offers an intrinsic thermal solution that combines a multi-heat pipe isothermal bus, oversized body-mounted radiators, a bus-to-radiator loop heat pipe (LHP) thermal transport/switching system, and maximum external insulation. PnPSat-2 offers an intrinsic mechanical solution that includes panels with embedded electronics, multiple component mounting locations, and features that allow the spacecraft to be transitioned to a flat-sat for easy assembly, integration, de-integration, and reassembly. To combine the two architectures, internal half-panels were redesigned to include spreader heat pipes (SHPs) for intra-panel isothermalization, side-to-top panel structural brackets were replaced by a combined bracket-header heat pipe (HHP) for inter-panel isothermalization, and an LHP evaporator was mounted to the HHP to enable variable conductance between the isothermal spacecraft bus and body-mounted (condensers) radiators. To evaluate the concept, a three-panel thermal test bed will be configured to simulate the combined SMARTS/PnPSat-2 configuration. The paper will describe the system design, key analytical trades, hardware status, and available test data.

  10. Transition region width of nanowire hetero- and pn-junctions grown using vapor-liquid-solid processes

    NASA Astrophysics Data System (ADS)

    Li, Na; Tan, Teh Y.; Gösele, U.

    2008-03-01

    The transition region width of nanowire heterojunctions and pn-junctions grown using vapor-liquid-solid (VLS) processes has been modeled. With two constituents or dopants I and II, the achievable width or abruptness of the junctions is attributed to the residual I atom/molecule stored in the liquid droplet at the onset of introducing II to grow the junction, and the stored I atom/molecule consumption into the subsequently grown crystal layers. The model yields satisfactory quantitative fits to a set of available Si-Ge junction data. Moreover, the model provides a satisfactory explanation to the relative junction width or abruptness differences between elemental and compound semiconductor junction cases, as well as a guideline for achieving the most desirable pn-junction widths.

  11. Narrow-band light emission from a single carbon nanotube p-n diode

    NASA Astrophysics Data System (ADS)

    Kinoshita, Megumi; Mueller, Thomas; Steiner, Mathias; Perebeinos, Vasili; Bol, Ageeth; Farmer, Damon; Avouris, Phaedon

    2010-03-01

    We present the first observation of electroluminescence from electrostatically-generated carbon nanotube (CNT) p-n junctions[1]. While CNT optoelectronics has made much progress in recent years, observations of emission from electrically excited CNT devices have been limited to the high-bias regime and with low efficiency. Furthermore, the resulting broad linewidths are broad, making it difficult to investigate electronic levels and carrier dynamics. We find that p-n junctions allow for better carrier control at lower power inputs, resulting in emission with near-zero threshold, low self-heating and efficiency two to three orders of magnitude greater compared to previous device configurations. This yields higher signal-to-noise ratio and narrower linewidths (down to ˜35 meV) that allows us to identify localized excitonic transitions that have previously been observed only in photoluminescent studies. [1] T. Mueller, M. Kinoshita, M. Steiner, V. Perebeinos, A. Bol, D. Farmer, and Ph. Avouris, Nature Nanotech., web publication, November 15 2009.

  12. The Involvement of Protease Nexin-1 (PN1) in the Pathogenesis of Intervertebral Disc (IVD) Degeneration

    PubMed Central

    Wu, Xinghuo; Liu, Wei; Duan, Zhenfeng; Gao, Yong; Li, Shuai; Wang, Kun; Song, Yu; Shao, Zengwu; Yang, Shuhua; Yang, Cao

    2016-01-01

    Protease nexin-1 (PN-1) is a serine protease inhibitor belonging to the serpin superfamily. This study was undertaken to investigate the regulatory role of PN-1 in the pathogenesis of intervertebral disk (IVD) degeneration. Expression of PN-1 was detected in human IVD tissue of varying grades. Expression of both PN-1 mRNA and protein was significantly decreased in degenerated IVD, and the expression levels of PN-1 were correlated with the grade of disc degeneration. Moreover, a decrease in PN-1 expression in primary NP cells was confirmed. On induction by IL-1β, the expression of PN-1 in NP cells was decreased at day 7, 14, and 21, as shown by western blot analysis and immunofluorescence staining. PN-1 administration decreased IL-1β-induced MMPs and ADAMTS production and the loss of Agg and Col II in NP cell cultures through the ERK1/2/NF-kB signaling pathway. The changes in PN-1 expression are involved in the pathogenesis of IVD degeneration. Our findings indicate that PN-1 administration could antagonize IL-1β-induced MMPs and ADAMTS, potentially preventing degeneration of IVD tissue. This study also revealed new insights into the regulation of PN-1 expression via the ERK1/2/NF-kB signaling pathway and the role of PN-1 in the pathogenesis of IVD degeneration. PMID:27460424

  13. Lipid emulsions containing fish oil protect against PN-induced cholestatic liver disease in preterm piglets

    Technology Transfer Automated Retrieval System (TEKTRAN)

    During their first weeks of life preterm infants are dependent on parenteral nutrition (PN). However, PN is associated with the development of cholestasis (PN Associated Liver Disease PNALD). Studies in children showed that fish oil-based lipid emulsions can reverse PNALD; whether they prevent PNALD...

  14. pN0(i+) Breast Cancer: Treatment Patterns, Locoregional Recurrence, and Survival Outcomes

    SciTech Connect

    Karam, Irene; Lesperance, Maria F.; Berrang, Tanya; Speers, Caroline; Tyldesley, Scott; Truong, Pauline T.

    2013-11-15

    Purpose: To examine treatment patterns, recurrence, and survival outcomes in patients with pN0(i+) breast cancer. Methods and Materials: Subjects were 5999 women with AJCC (6th edition) pT1-3, pN0-N1a, M0 breast cancer diagnosed between 2003 and 2006. Of these, 4342 (72%) had pN0, 96 (2%) had pN0(i+), 349 (6%) had pNmic (micrometastases >0.2 mm to ≤2 mm), and 1212 (20%) had pN1a (1-3 positive macroscopic nodes) disease. Treatment characteristics and 5-year Kaplan-Meier local recurrence, regional recurrence (RR), locoregional recurrence (LRR), and overall survival were compared between nodal subgroups. Multivariable analysis was performed using Cox regression modeling. A 1:3 case-match analysis examined outcomes in pN0(i+) cases compared with pN0 controls matched for similar tumor and treatment characteristics. Results: Median follow-up was 4.8 years. Adjuvant systemic therapy use increased with nodal stage: 81%, 92%, 95%, and 94% in pN0, pN0(i+), pNmic, and pN1a disease, respectively (P<.001). Nodal radiation therapy (RT) use also increased with nodal stage: 1.7% in pN0, 27% in pN0(i+), 33% in pNmic, and 63% in pN1a cohorts (P<.001). Five-year Kaplan-Meier outcomes in pN0 versus pN0(i+) cases were as follows: local recurrence 1.7% versus 3.7% (P=.20), RR 0.5% versus 2.2% (P=.02), and LRR 2.1% versus 5.8% (P=.02). There were no RR events in 26 patients with pN0(i+) disease who received nodal RT and 2 RR events in 70 patients who did not receive nodal RT. On multivariable analysis, pN0(i+) was not associated with worse locoregional control or survival. On case-match analysis, LRR and overall survival were similar between pN0(i+) and matched pN0 counterparts. Conclusions: Nodal involvement with isolated tumor cells is not a significant prognostic factor for LRR or survival in this study's multivariable and case-match analyses. These data do not support the routine use of nodal RT in the setting of pN0(i+) disease. Prospective studies are needed to define optimal

  15. Discovery of a photoresponse amplification mechanism in compensated PN junctions

    SciTech Connect

    Zhou, Yuchun; Rahman, Samia N.; Hall, David; Lo, Yu-Hwa; Liu, Yu-Hsin; Sham, L. J.

    2015-01-19

    We report the experimental evidence of uncovering a photoresponse amplification mechanism in heavily doped, partially compensated silicon p-n junctions under very low bias voltage. We show that the observed photocurrent gain occurs at a bias that is more than an order of magnitude below the threshold voltage for conventional impact ionization. Moreover, contrary to the case of avalanche detectors and p-i-n diodes, the amplified photoresponse is enhanced rather than suppressed with increasing temperature. These distinctive characteristics lead us to hypothesize that the inelastic scattering between energetic electrons (holes) and the ionized impurities in the depletion and charge neutral regions of the p-n junction in a cyclic manner plays a significant role in the amplification process. Such an internal signal amplification mechanism, which occurs at much lower bias than impact ionization and favors room temperature over cryogenic temperature, makes it promising for practical device applications.

  16. Molecular p-n Junction Photodiodes of Langmuir Multilayer Semiconductors

    NASA Astrophysics Data System (ADS)

    Sakai, Kunihiro; Saito, Mitsuyoshi; Sugi, Michio; Iizima, Sigeru

    1985-07-01

    The electrical and photoelectric characteristics of Langmuir-Blodgett film heterojunctions have been studied using organic p-n diodes consisting of monolayers of four kinds of merocyanine (MX) dyes stacked on monolayers of distearyl paraquat (PQ). A rectifying effect observed in the dark indicates that the PQ and MX monolayers act as n-type and p-type regions, respectively. The photocarriers are identified as electrons generated in the photosensitive MX monolayers. Comparison between different types of MX dyes suggests that laterial motion of carriers occurs in the p-n junctions, and that the acceptor nuclei, i.e., rhodanine in MX, play a dominant role in determining the diffusion potential with respect to the PQ n-type region.

  17. Snake trajectories in ultraclean graphene p-n junctions

    NASA Astrophysics Data System (ADS)

    Rickhaus, Peter; Makk, Péter; Liu, Ming-Hao; Tóvári, Endre; Weiss, Markus; Maurand, Romain; Richter, Klaus; Schönenberger, Christian

    2015-03-01

    Snake states are trajectories of charge carriers curving back and forth along an interface. There are two types of snake states, formed by either inverting the magnetic field direction or the charge carrier type at an interface. The former has been demonstrated in GaAs-AlGaAs heterostructures, whereas the latter has become conceivable only with the advance of ballistic graphene where a gap-less p-n interface governed by Klein tunnelling can be formed. Such snake states were hidden in previous experiments due to limited sample quality. Here we report on magneto-conductance oscillations due to snake states in a ballistic suspended graphene p-n junction, which occur already at a very small magnetic field of 20 mT. The visibility of 30% is enabled by Klein collimation. Our finding is firmly supported by quantum transport simulations. We demonstrate the high tunability of the device and operate it in different magnetic field regimes.

  18. Antimonide-based pN Terahertz Mixer Diodes

    DTIC Science & Technology

    2011-06-01

    are under development including the InAs channel high electron mobility transistors , the heterojunction bipolar transistors , the resonant tunneling...used to make high frequency mixer diodes. This article describes several features of the InGaSb/InAlAsSb pN diode that act to minimize the diffusion...for the collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data

  19. Frequency-Dependent Nature of Pn in Western China

    DTIC Science & Technology

    2009-09-30

    recorded by the Hi-CLIMB (An Integrated Study of the Himalayan-Tibetan Continental Lithosphere during Mountain Building) array in the region. Seismic...of Pn seismic attributes in order to investigate the trade-offs of large scale lithospheric structure, small scale heterogeneities and attenuation in... Lithosphere during Mountain Building) array in the region. Seismic attributes, including arrival times, Hilbert envelope amplitudes and instantaneous and

  20. Electrospun Composite Nanofibers of Semiconductive Polymers for Coaxial PN Junctions

    NASA Astrophysics Data System (ADS)

    Serrano, William; Thomas, Sylvia

    The objective of this research is to investigate the conditions under P3HT and Activink, semiconducting polymers, form 1 dimension (1D) coaxial p-n junctions and to characterize their behavior in the presence of UV radiation and organic gases. For the first time, fabrication and characterization of semiconductor polymeric single fiber coaxial arrangements will be studied. Electrospinning, a low cost, fast and reliable method, with a coaxial syringe arrangement will be used to fabricate these fibers. With the formation of fiber coaxial arrangements, there will be investigations of dimensionality crossovers e.g., from one-dimensional (1D) to two-dimensional (2D). Coaxial core/shell fibers have been realized as seen in a recent publication on an electrospun nanofiber p-n heterojunction of oxides (BiFeO3 and TiO2, respectively) using the electrospinning technique with hydrothermal method. In regards to organic semiconducting coaxial p-n junction nanofibers, no reported studies have been conducted, making this study fundamental and essential for organic semiconducting nano devices for flexible electronics and multi-dimensional integrated circuits.

  1. Non PN junction solar cells using carrier selective contacts

    NASA Astrophysics Data System (ADS)

    Bowden, Stuart; Ghosh, Kunal; Honsberg, Christiana

    2013-03-01

    A novel device concept utilizing the approach of selectively extracting carriers at the respective contacts is outlined in the work. The dominant silicon solar cell technology is based on a diffused, top-contacted p-n junction on a relatively thick silicon wafer for both commercial and laboratory solar cells. The VOC and hence the efficiency of a diffused p-n junction solar cell is limited by the emitter recombination current and a value of 720 mV is considered to be the upper limit. The value is more than 100 mV smaller than the thermodynamic limit of VOC as applicable for silicon based solar cells. Also, in diffused junction the use of thin wafers (< 50 um) are problematic because of the requirement of high temperature processing steps. But a number of roadmaps have identified solar cells manufactured on thinner silicon wafers to achieve lower cost and higher efficiency. The carrier selective contact device provides a novel alternative to diffused p-n junction solar cells by eliminating the need for complementary doping to form the emitter and hence it allows the solar cells to achieve a VOC of greater than 720 mV. Also, the complete device structure can be fabricated with low temperature thin film deposition or organic coating on silicon substrates and thus epitaxially grown silicon or kerfless silicon, in addition to standard silicon wafers can be utilized.

  2. Structural and thermoelectric properties of zintl-phase CaLiPn (Pn=As, Sb, Bi)

    NASA Astrophysics Data System (ADS)

    Chandran, Anoop K.; Gudelli, Vijay Kumar; Sreeparvathy, P. C.; Kanchana, V.

    2016-11-01

    First-principles calculations were carried out to study the structural, mechanical, dynamical and transport properties of zintl phase materials CaLiPn (Pn=As, Sb and Bi). We have used two different approaches to solve the system based on density functional theory. The plane wave pseudopotential approach has been used to study the structural and dynamical properties whereas, full potential linear augment plane wave method is used to examine the electronic structure, mechanical and thermoelectric properties. The calculated ground-state properties agree quite well with experimental values. The computed electronic structure shows the investigated compounds to be direct band gap semiconductors. Further, we have calculated the thermoelectric properties of all the investigated compounds for both the carriers at various temperatures. We found a high thermopower for both the carriers, especially n-type doping to be more favourable, which enabled us to predict that CaLiPn might have promising applications as a good thermoelectric material. Further, the phonon dispersion curves of the investigated compounds showed flat phonon modes and we also find lower optical and acoustic modes to cut each other at the lower frequency range, which further indicate the investigated compounds to possess reasonably low thermal conductivity. We have also analysed the low value of the thermal conductivity through the empirical relations and discussions are presented here.

  3. Prognostic Value of Preoperative Serum Levels of Periostin (PN) in Early Breast Cancer (BCa).

    PubMed

    Nuzzo, Pier Vitale; Rubagotti, Alessandra; Argellati, Francesca; Di Meglio, Antonio; Zanardi, Elisa; Zinoli, Linda; Comite, Paola; Mussap, Michele; Boccardo, Francesco

    2015-07-28

    PN is a secreted cell adhesion protein critical for carcinogenesis. Elevated serum levels of PN have been implicated as playing an important role in different types of cancer, and a few reports suggest a potential role as a prognostic marker. We evaluated the prognostic significance of preoperative serum PN concentration in patients with BCa receiving curative surgery. Enzyme-Linked Immunosorbent Assay (ELISA) was performed to determine the preoperative serum PN level in 182 patients. The correlations between serum PN concentration with clinical pathological features and PN expression in primary tumor samples were analyzed. The prognostic impact of serum PN levels with all-cause and BCa-specific mortality was also investigated. Appropriate statistics were used. Elevated serum PN levels were significantly associated with patient age (p = 0.005), adjuvant systemic therapy (p = 0.04) and progesterone receptor (PgR) status (p = 0.02). No correlation between PN preoperative serum levels and other clinical-pathological parameters, including either the epithelial or the stromal PN expression of primary tumor or the combination of the two, was found. Similarly, no association between serum PN levels and either all-cause or BCa-specific mortality was found. However, subgroup analysis revealed a correlation between higher PN serum levels and all-cause mortality in patients with node-negative disease (p = 0.05) and in those with a low PgR expression (p = 0.03). Higher levels of serum PN were also found to correlate with BCa-specific mortality in the subgroup of patients who did not receive any adjuvant systemic therapy (p = 0.04). Our findings suggest that PN was detectable in the serum of early BCa patients before surgery and increased base-line serum levels predicted worse long-term survival outcomes in specific subgroups of patients.

  4. Prognostic Value of Preoperative Serum Levels of Periostin (PN) in Early Breast Cancer (BCa)

    PubMed Central

    Nuzzo, Pier Vitale; Rubagotti, Alessandra; Argellati, Francesca; Di Meglio, Antonio; Zanardi, Elisa; Zinoli, Linda; Comite, Paola; Mussap, Michele; Boccardo, Francesco

    2015-01-01

    PN is a secreted cell adhesion protein critical for carcinogenesis. Elevated serum levels of PN have been implicated as playing an important role in different types of cancer, and a few reports suggest a potential role as a prognostic marker. We evaluated the prognostic significance of preoperative serum PN concentration in patients with BCa receiving curative surgery. Enzyme-Linked Immunosorbent Assay (ELISA) was performed to determine the preoperative serum PN level in 182 patients. The correlations between serum PN concentration with clinical pathological features and PN expression in primary tumor samples were analyzed. The prognostic impact of serum PN levels with all-cause and BCa-specific mortality was also investigated. Appropriate statistics were used. Elevated serum PN levels were significantly associated with patient age (p = 0.005), adjuvant systemic therapy (p = 0.04) and progesterone receptor (PgR) status (p = 0.02). No correlation between PN preoperative serum levels and other clinical-pathological parameters, including either the epithelial or the stromal PN expression of primary tumor or the combination of the two, was found. Similarly, no association between serum PN levels and either all-cause or BCa-specific mortality was found. However, subgroup analysis revealed a correlation between higher PN serum levels and all-cause mortality in patients with node-negative disease (p = 0.05) and in those with a low PgR expression (p = 0.03). Higher levels of serum PN were also found to correlate with BCa-specific mortality in the subgroup of patients who did not receive any adjuvant systemic therapy (p = 0.04). Our findings suggest that PN was detectable in the serum of early BCa patients before surgery and increased base-line serum levels predicted worse long-term survival outcomes in specific subgroups of patients. PMID:26225965

  5. ZnO PN Junctions for Highly-Efficient, Low-Cost Light Emitting Diodes

    SciTech Connect

    David P. Norton; Stephen Pearton; Fan Ren

    2007-09-30

    By 2015, the US Department of Energy has set as a goal the development of advanced solid state lighting technologies that are more energy efficient, longer lasting, and more cost-effective than current technology. One approach that is most attractive is to utilize light-emitting diode technologies. Although III-V compound semiconductors have been the primary focus in pursuing this objective, ZnO-based materials present some distinct advantages that could yield success in meeting this objective. As with the nitrides, ZnO is a direct bandgap semiconductor whose gap energy (3.2 eV) can be tuned from 3.0 to 4 eV with substitution of Mg for higher bandgap, Cd for lower bandgap. ZnO has an exciton binding energy of 60 meV, which is larger than that for the nitrides, indicating that it should be a superior light emitting semiconductor. Furthermore, ZnO thin films can be deposited at temperatures on the order of 400-600 C, which is significantly lower than that for the nitrides and should lead to lower manufacturing costs. It has also been demonstrated that functional ZnO electronic devices can be fabricated on inexpensive substrates, such as glass. Therefore, for the large-area photonic application of solid state lighting, ZnO holds unique potential. A significant impediment to exploiting ZnO in light-emitting applications has been the absence of effective p-type carrier doping. However, the recent realization of acceptor-doped ZnO material overcomes this impediment, opening the door to ZnO light emitting diode development In this project, the synthesis and properties of ZnO-based pn junctions for light emitting diodes was investigated. The focus was on three issues most pertinent to realizing a ZnO-based solid state lighting technology, namely (1) achieving high p-type carrier concentrations in epitaxial and polycrystalline films, (2) realizing band edge emission from pn homojunctions, and (3) investigating pn heterojunction constructs that should yield efficient light

  6. Experimental study of exclusive $^2$H$(e,e^\\prime p)n$ reaction mechanisms at high $Q^2$

    SciTech Connect

    Kim Egiyan; Gegham Asryan; Nerses Gevorgyan; Keith Griffioen; Jean Laget; Sebastian Kuhn; Gary Adams; Moscov Amaryan; Pawel Ambrozewicz; Marco Anghinolfi; Gerard Audit; Harutyun AVAKIAN; Harutyun Avakian; Hovhannes Baghdasaryan; Nathan Baillie; Jacques Ball; Nathan Baltzell; Steve Barrow; Vitaly Baturin; Marco Battaglieri; Ivan Bedlinski; Ivan Bedlinskiy; Mehmet Bektasoglu; Matthew Bellis; Nawal Benmouna; Barry Berman; Angela Biselli; Lukasz Blaszczyk; Sylvain Bouchigny; Sergey Boyarinov; Robert Bradford; Derek Branford; William Briscoe; William Brooks; Stephen Bueltmann; Volker Burkert; Cornel Butuceanu; John Calarco; Sharon Careccia; Daniel Carman; Antoine Cazes; Shifeng Chen; Philip Cole; Patrick Collins; Philip Coltharp; Dieter Cords; Pietro Corvisiero; Donald Crabb; Volker Crede; John Cummings; Natalya Dashyan; Rita De Masi; Raffaella De Vita; Enzo De Sanctis; Pavel Degtiarenko; Haluk Denizli; Lawrence Dennis; Alexandre Deur; Kahanawita Dharmawardane; Richard Dickson; Chaden Djalali; Gail Dodge; Joseph Donnelly; David Doughty; Michael Dugger; Steven Dytman; Oleksandr Dzyubak; Hovanes Egiyan; Lamiaa Elfassi; Latifa Elouadrhiri; Paul Eugenio; Renee Fatemi; Gleb Fedotov; Gerald Feldman; Robert Feuerbach; Robert Fersch; Michel Garcon; Gagik Gavalian; Gerard Gilfoyle; Kevin Giovanetti; Francois-Xavier Girod; John Goetz; Atilla Gonenc; Christopher Gordon; Ralf Gothe; Michel Guidal; Matthieu Guillo; Hayko Guler; Lei Guo; Vardan Gyurjyan; Cynthia Hadjidakis; Kawtar Hafidi; Hayk Hakobyan; Rafael Hakobyan; Charles Hanretty; John Hardie; F. Hersman; Kenneth Hicks; Ishaq Hleiqawi; Maurik Holtrop; Charles Hyde-Wright; Yordanka Ilieva; David Ireland; Boris Ishkhanov; Eugeny Isupov; Mark Ito; David Jenkins; Hyon-Suk Jo; Kyungseon Joo; Henry Juengst; Narbe Kalantarians; James Kellie; Mahbubul Khandaker; Wooyoung Kim; Andreas Klein; Franz Klein; Alexei Klimenko; Mikhail Kossov; Zebulun Krahn; Laird Kramer; V. Kubarovsky; Joachim Kuhn; Sergey Kuleshov; Jeff Lachniet; Jorn Langheinrich; David Lawrence; Ji Li; Kenneth Livingston; Haiyun Lu; Marion MacCormick; Claude Marchand; Nikolai Markov; Paul Mattione; Simeon McAleer; Bryan McKinnon; John McNabb; Bernhard Mecking; Surik Mehrabyan; Joseph Melone; Mac Mestayer; Curtis Meyer; Tsutomu Mibe; Konstantin Mikhaylov; Ralph Minehart; Marco Mirazita; Rory Miskimen; Viktor Mokeev; Kei Moriya; Steven Morrow; Maryam Moteabbed; James Mueller; Edwin Munevar Espitia; Gordon Mutchler; Pawel Nadel-Turonski; Rakhsha Nasseripour; Silvia Niccolai; Gabriel Niculescu; Maria-Ioana Niculescu; Bogdan Niczyporuk; Megh Niroula; Rustam Niyazov; Mina Nozar; Grant O'Rielly; Mikhail Osipenko; Alexander Ostrovidov; Kijun Park; Evgueni Pasyuk; Craig Paterson; Sergio Pereira; Joshua Pierce; Nikolay Pivnyuk; Dinko Pocanic; Oleg Pogorelko; Sergey Pozdnyakov; Barry Preedom; John Price; Yelena Prok; Dan Protopopescu; Brian Raue; Gregory Riccardi; Giovanni Ricco; Marco Ripani; Barry Ritchie; Federico Ronchetti; Guenther Rosner; Patrizia Rossi; Franck Sabatie; Julian Salamanca; Carlos Salgado; Joseph Santoro; Vladimir Sapunenko; Reinhard Schumacher; Vladimir Serov; Youri Sharabian; Nikolay Shvedunov; Alexander Skabelin; Elton Smith; Lee Smith; Daniel Sober; Daria Sokhan; Aleksey Stavinskiy; Samuel Stepanyan; Stepan Stepanyan; Burnham Stokes; Paul Stoler; Steffen Strauch; Mauro Taiuti; David Tedeschi; Ulrike Thoma; Avtandil Tkabladze; Svyatoslav Tkachenko; Luminita Todor; Clarisse Tur; Maurizio Ungaro; Michael Vineyard; Alexander Vlassov; Daniel Watts; Lawrence Weinstein; Dennis Weygand; M. Williams; Elliott Wolin; Michael Wood; Amrit Yegneswaran; Lorenzo Zana; Jixie Zhang; Bo Zhao; Zhiwen Zhao

    2007-06-01

    The reaction {sup 2}H(e,e{prime} p)n has been studied with full kinematic coverage for photon virtuality 1.75 < 5.5 {approx} GeV{sup 2}. Comparisons of experimental data with theory indicate that for very low values of neutron recoil momentum (p{sub n} < 100 MeV/c) the neutron is primarily a spectator and the reaction can be described by the plane-wave impulse approximation. For 100 < 750 MeV/c proton-neutron rescattering dominates the cross section, while {Delta} production followed by the N{Delta} {yields} NN transition is the primary contribution at higher momenta.

  7. Determination de la qualite spectrale de faisceaux pulses de rayons X a l'aide de jonction P.N.

    NASA Astrophysics Data System (ADS)

    Guille, B.; Bernard, M.

    1982-06-01

    The current measured with a p-n junction is a function of the two parameters necessary to define the X-ray beam quality from the voltage applied to the tube and the additional filtration. Replacing the junction by screens of different atomic number yields ratios which are dependent only on the required characteristics of the beam. Nomograms have enabled the studied X-ray quality for "pulsed" generators to be obtained; the voltages applied to the tube are between 48 kV to 94 kV; the filters of aluminium have thicknesses of between 0 to 6 mm. The equivalence continuous voltage-pulsed voltage agrees with the literature.

  8. Trees increase their P:N ratio with size

    PubMed Central

    Sardans, J; Peñuelas, J.

    2015-01-01

    Aim Phosphorus (P) tends to become limiting in aging terrestrial ecosystems, and its resorption efficiency is higher than for other elements such as nitrogen (N). We thus hypothesized that trees should store more P than those other elements such as N when tree size increases and that this process should be enhanced in slow-growing late successional trees. Location Catalan forests. Methods We have used data from the Catalan Forest Inventory that contains field data of the P and N contents of total aboveground, foliar and woody biomasses of the diverse Mediterranean, temperate and alpine forests of Catalonia (1018 sites). We used correlation and general lineal models (GLM) to analyze the allometric relationships between nutrient contents of different aboveground biomass fractions (foliar, branches and stems) and total aboveground biomass. Results Aboveground forest P content increases proportionally more than aboveground forest N content with increasing aboveground biomass. Two mechanisms underlie this. First, woody biomass increases proportionally more than foliar biomass having woody biomass higher P:N ratio than foliar biomass. Second, wood P:N ratio increases with tree size. These results are consistent with the generally higher foliar resorption of P than of N. Slow-growing species accumulate more P in total aboveground with size than fast-growing species mainly as a result of their large capacity to store P in wood. Main conclusions Trees may have thus developed long-term adaptive mechanisms to store P in biomass, mainly in wood, thereby slowing the loss of P from the ecosystems, reducing its availability for competitors, and implying an increase in the P:N ratio in forest biomass with aging. This trend to accumulate more P than N with size is more accentuated in slow-growing, large, long-living species of late successional stages. This way they partly counterbalance the gradual decrease of P in the soil. PMID:25983656

  9. Pn anisotropic tomography and dynamics under eastern Tibetan plateau

    NASA Astrophysics Data System (ADS)

    Lei, Jianshe; Li, Yuan; Xie, Furen; Teng, Jiwen; Zhang, Guangwei; Sun, Changqing; Zha, Xiaohui

    2014-03-01

    We present a new anisotropic tomographic model of the uppermost mantle around eastern Tibet using Pn traveltime data from a newly deployed temporary seismic array and recent observation bulletins of Chinese provincial networks. Our results are generally consistent with previous results but provide new insights into the dynamics of Tibetan plateau. Prominent high-velocity (high-V) anomalies are visible under Alashan block and Qaidam and Sichuan basins, which clearly outline their tectonic margins. A distinct high-V zone representing the double-sided subduction of Indo-Eurasian plates is imaged from Lhasa block to the south of Qaidam basin. A pronounced low-velocity (low-V) zone is observed from Songpan-Ganzi block to southern Chuan-Dian diamond block, suggesting the existence of hot material upwelling there. Crustal strong earthquakes frequently occurred around high-V anomalies or transition zones from high-V to low-V anomalies, suggesting that these earthquakes could be related to lateral heterogeneities in the mantle. The Pn fast direction approximately rotates around Eastern Himalayan Syntaxis, and it is tangential to the margins of Sichuan basin, suggesting that the mantle material flow of Tibetan plateau may have affected east China. In the Yunnan region to the south of 26°N, the Pn fast direction is different from SKS splitting results, indicating that the mantle lithosphere could be mechanically decoupled at certain depth below the uppermost mantle, which might be attributable to the subduction of Indian (or Burma) slab. Although the correlation between anisotropy and velocity is complicated, anisotropy strength could be associated with the pattern of velocity anomalies in the region.

  10. Eccentric orbit E/IMRI gravitational wave fluxes to 7PN order

    NASA Astrophysics Data System (ADS)

    Forseth, Erik; Evans, Charles R.; Hopper, Seth

    2016-03-01

    Knowledge of gravitational wave fluxes (energy and angular momentum, at both infinity and the horizon) from eccentric-orbit inspirals is extended from 3PN to 7PN order at lowest order in small mass ratio. Previous post-Newtonian eccentric-orbit results up to 3PN relative order are confirmed by our new black hole perturbation calculations. The calculations are based on Mano, Suzuki, and Takasugi (MST) analytic function expansions, and results are computed to 200 decimal places of accuracy using Mathematica. Over 1,700 distinct orbits were computed, each with as many as 7,000 Fourier-harmonic modes. A large number of PN coefficients between 3.5PN and 7PN orders were determined, either in exact analytic form or with accurate numerical values, in expansions in powers of a PN compactness parameter and its logarithm, and powers of eccentricity. We show a parametrization that removes singularities in the fluxes as the eccentricity approaches unity, thus making the expansions more convergent at high eccentricity. We also found (nearly) arbitrarily accurate expansions for the previously discussed 1.5PN, 2.5PN, and 3PN hereditary terms.

  11. Photocurrent generation efficiency of a carbon nanotube pn junction

    NASA Astrophysics Data System (ADS)

    McCulley, Daniel; Aspitarte, Lee; Minot, Ethan

    Carrier multiplication effects can enhance the quantum efficiency of photovoltaic devices. For example, quantum dot solar cells have demonstrated photon-to-electron conversion efficiencies greater than 100% when photon energies exceed twice the band gap. Carbon nanotube photodiodes exhibit carrier multiplication effects (Gabor et al., Science 2009), but the quantum efficiency of such photodiodes has not previously been characterized. We have reproduced the carrier multiplication phenomena in individual CNT pn junctions and investigated the conditions under which it occurs. We will present early results quantifying the internal quantum efficiency of the process.

  12. A CW radar for ranging with PN/PSK modulation

    NASA Astrophysics Data System (ADS)

    Knapp, W.; Waesserling, H. G.; Wigger, B.

    The design and performance of a compact CW spread-spectrum ranging radar with pseudonoise phase-shift-keying (PN/PSK) modulation are discussed. The operating principles of the SAW convolver employed for matched filtering (Grossl, 1985) are explained; the system configuration is illustrated with a block diagram; and performance data are summarized in a table. The radar provides range resolution 2 m out to a maximum range of 2.4 km. Operating parameters include code length 511 chirps, dynamic range 50 dB, pseudorandom-function repetition rate 31.9 MHz, processing time 16 microsec, and target recognition level above noise 38 dB.

  13. Time Shifted PN Codes for CW Lidar, Radar, and Sonar

    NASA Technical Reports Server (NTRS)

    Campbell, Joel F. (Inventor); Prasad, Narasimha S. (Inventor); Harrison, Fenton W. (Inventor); Flood, Michael A. (Inventor)

    2013-01-01

    A continuous wave Light Detection and Ranging (CW LiDAR) system utilizes two or more laser frequencies and time or range shifted pseudorandom noise (PN) codes to discriminate between the laser frequencies. The performance of these codes can be improved by subtracting out the bias before processing. The CW LiDAR system may be mounted to an artificial satellite orbiting the earth, and the relative strength of the return signal for each frequency can be utilized to determine the concentration of selected gases or other substances in the atmosphere.

  14. Shot noise generated by graphene p-n junctions in the quantum Hall effect regime.

    PubMed

    Kumada, N; Parmentier, F D; Hibino, H; Glattli, D C; Roulleau, P

    2015-09-04

    Graphene offers a unique system to investigate transport of Dirac Fermions at p-n junctions. In a magnetic field, combination of quantum Hall physics and the characteristic transport across p-n junctions leads to a fractionally quantized conductance associated with the mixing of electron-like and hole-like modes and their subsequent partitioning. The mixing and partitioning suggest that a p-n junction could be used as an electronic beam splitter. Here we report the shot noise study of the mode-mixing process and demonstrate the crucial role of the p-n junction length. For short p-n junctions, the amplitude of the noise is consistent with an electronic beam-splitter behaviour, whereas, for longer p-n junctions, it is reduced by the energy relaxation. Remarkably, the relaxation length is much larger than typical size of mesoscopic devices, encouraging using graphene for electron quantum optics and quantum information processing.

  15. Tomographic Imaging of Pn and Sn Velocities in the Middle East and Central Asia

    NASA Astrophysics Data System (ADS)

    Pei, S.; Sun, Y.; Toksoz, M. N.

    2009-12-01

    We have obtained Vp and Vs velocity images of the uppermost mantle beneath the Middle East and Central Asia by performing tomographic inversion of both Pn and Sn travel times. In total 654,999 Pn and 121,838 Sn arrivals were selected from the ISC/EHB database and the Annual Bulletin of Chinese Earthquakes. Average Pn and Sn velocities are 8.04 km/s and 4.60 km/s, respectively with maximum velocity perturbations more than 6%. Pn velocities correlate well with topography. In general, low velocities are found beneath mountains and high velocities are found beneath oceans, basins and plains with low elevation. Tectonic boundaries are clearly outlined in between the high and low Pn velocities. These boundaries include Hellenic arc, Cyprean arc, Zagros suture, Charman fault, Hari Rod fault. The Sn velocities show similar patterns to the Pn velocities.

  16. Shot noise generated by graphene p-n junctions in the quantum Hall effect regime

    NASA Astrophysics Data System (ADS)

    Kumada, N.; Parmentier, F. D.; Hibino, H.; Glattli, D. C.; Roulleau, P.

    2015-09-01

    Graphene offers a unique system to investigate transport of Dirac Fermions at p-n junctions. In a magnetic field, combination of quantum Hall physics and the characteristic transport across p-n junctions leads to a fractionally quantized conductance associated with the mixing of electron-like and hole-like modes and their subsequent partitioning. The mixing and partitioning suggest that a p-n junction could be used as an electronic beam splitter. Here we report the shot noise study of the mode-mixing process and demonstrate the crucial role of the p-n junction length. For short p-n junctions, the amplitude of the noise is consistent with an electronic beam-splitter behaviour, whereas, for longer p-n junctions, it is reduced by the energy relaxation. Remarkably, the relaxation length is much larger than typical size of mesoscopic devices, encouraging using graphene for electron quantum optics and quantum information processing.

  17. Eccentric-orbit extreme-mass-ratio inspiral gravitational wave energy fluxes to 7PN order

    NASA Astrophysics Data System (ADS)

    Forseth, Erik; Evans, Charles R.; Hopper, Seth

    2016-03-01

    We present new results through 7PN order on the energy flux from eccentric extreme-mass-ratio binaries. The black hole perturbation calculations are made at very high accuracy (200 decimal places) using a Mathematica code based on the Mano-Suzuki-Takasugi analytic function expansion formalism. All published coefficients in the expansion through 3PN order at lowest order in the mass ratio are confirmed and new analytic and numeric terms are found to high order in powers of e2 at post-Newtonian orders between 3.5PN and 7PN. We also show original work in finding (nearly) arbitrarily accurate expansions for hereditary terms at 1.5PN, 2.5PN, and 3PN orders. An asymptotic analysis is developed that guides an understanding of eccentricity singular factors, which diverge at unit eccentricity and which appear at each PN order. We fit to a model at each PN order that includes these eccentricity singular factors, which allows the flux to be accurately determined out to e →1 .

  18. High-frequency Pn,Sn phases recorded by ocean bottom seismometers on the Cocos plate

    SciTech Connect

    McCreery, C.S.

    1981-05-01

    Data from ocean bottom seismometers located on the Cocos plate indicate that high-frequency Pn,Sn phases are generated by earthquakes along the subducting margin of that plate and are propagated across the plate. The Sn phase appears to be severely attenuated as it approaches the ridge crest. Estimates of Pn velocity are lower than previous extimates for western Pacific paths, which may indicate a relationship between Pn,Sn velocity and lithospheric age. High frequencies found in these phases suggest that Q for Pn,Sn propagation across the Cocos plate is similar to that for the western Pacific.

  19. Calcium channel receptor sites for (+)-[3H]PN 200-110 in coronary artery.

    PubMed

    Yamada, S; Kimura, R; Harada, Y; Nakayama, K

    1990-01-01

    The receptor sites for 1,4-dihydropyridine (DHP) Ca++ channel antagonists in porcine coronary artery were identified and characterized by a binding assay using (+)-[3H]PN 200-110 as a radioligand. Specific (+)-[3H]PN 200-110 binding in porcine coronary artery was saturable, reversible and of high affinity (Kd = 0.24 nM) and it showed a pharmacological specificity as well as stereoselectivity which characterized the receptor sites for DHP Ca++ channel antagonists. DHP antagonists competed for the (+)-[3H]PN 200-110 binding in order: PN 200-110 greater than mepirodipine greater than nisoldipine greater than nicardipine greater than nitrendipine greater than nimodipine greater than nifedipine greater than (-)-PN 200-110. (+)-PN 200-110 was approximately 140 times as potent as the (-)-isomer. The potencies (PKi) of these eight DHP Ca++ channel antagonists in competing for (+)-[3H]PN 200-110 binding sites in porcine coronary artery correlated well with their pharmacological potencies. Specific (+)-[3H]PN 200-110 binding in the coronary artery was enhanced by d-cis-diltiazem and was inhibited incompletely by verapamil and D-600. In EDTA-pretreated coronary artery, the maximal number of binding sites for specific (+)-[3H]PN 200-110 binding was reduced (80%) markedly, and it was restored to the untreated level by the addition of Ca++ and Mg++.(ABSTRACT TRUNCATED AT 250 WORDS)

  20. Isoelectronic analogues of PN: Remarkably stable multiply charged cations

    SciTech Connect

    Wong, Ming Wah; Radom, L. )

    1990-01-25

    The structures and stabilities of PN and its 27 isoelectronic analogues, CS, SiO, BCl, AlF, BeAr, MgNe, Sn{sup +}, PO{sup +}, CCl{sup +}, SiF{sup +}, BAr{sup +}, AlNe{sup +}, SO{sup 2+}, NCl{sup 2+}, PF{sup 2+}, CAr{sup 2+}, SiNe{sup 2+}, OCl{sup 3+}, SF{sup 3+}, NAr{sup 3+}, PNe{sup 3+}, FCl{sup 4+}, OAr{sup 4+}, SNe{sup 4+}, FAr{sup 5+}, ClNe{sup 5+}, and ArNe{sup 6+}, have been examined by ab initio molecular orbital theory. The CASSCF/6-311G(MC)(d) level was used to determine the ground-state potential energy curves and spectroscopic constants for the 28 diatomic systems. Equilibrium structures were also obtained with the 6-311G(MC)(d) basis set at the MP3 and ST4CCD levels, and dissociation energies were determined at the MP4/6-311 + G(MC)(2df) and MP4/6-311 + G(MC)(3d2f) levels. For the neutral and monocation analogues of PN, the calculated equilibrium geometries (at MP3/6-311G(MC)(d)) and dissociation energies (at MP4/6-311 + G(MC)(3d2f)) are in very good agreement with available experimental values. All the dication analogues of PN, namely, SO{sup 2+}, NCl{sup 2+}, PF{sup 2+}, CAr{sup 2+}, and SiNe{sup 2+}, are predicted to be experimentally observable species. Of these, the SO{sup 2+}, NCl{sup 2+}, and CAr{sup 2+} dications are calculated to be kinetically stable species, with large barriers associated with the exothermic charge-separation reactions, while the PF{sup 2+} and SiNe{sup 2+} dications are predicted not only to be kinetically stable but also to be thermodynamically stable species.

  1. Polarimetry of R Aqr and PN M2-9

    NASA Astrophysics Data System (ADS)

    Navarro, Silvana G.; Sabin, Laurence; Ramírez Vélez; , Julio; Hiriart, David

    2014-08-01

    The bipolar or more complex morphology observed in planetary nebulae have been explained by two principal hypothesis: by the existence of a companion and an accreting disk or by the effects of magnetic field, (or a combination of both). Symbiotics are binary systems and some of them show morphologies similar to those observed on planetary nebulae. This fact could support the binary hypothesis for PNe. We have therefore performed polarimetric observations of symbiotic systems and some planetary nebulae in order, first to detect linear polarisation with POLIMA at the San Pedro Mártir observatory, and ultimately to prove the existence and physical properties of those disks. We present here the first results of a project dedicated to the analysis of the polarisation observed in evolved objects starting with the PN M2-9 and R Aqr.

  2. Elastic np → np( pn) scattering at intermediate energies

    NASA Astrophysics Data System (ADS)

    Troyan, Yu. A.; Anikina, M. Kh.; Belyaev, A. V.; Ierusalimov, A. P.; Troyan, A. Yu.

    2014-03-01

    The study of the elastic np → np( pn) scattering was carried out at the momenta of incident quasimonochromatic neutrons P 0 = 1.43, 2.23 and 5.20 GeV/ c. The differential cross sections of the processes of elastic np scattering, both without (cos Φ* p < 0) and with charge exchange (cos Φ* p >0) of nucleons, are analyzed. The results are compared with the data of other experiments. The suggested pole model takes into account exchange by π meson, ρ meson, and includes the peripheral exchange mechanism. This model permits one to get a good description of the data of elastic np scattering at the energy region 1-10 GeV.

  3. First tests with fully depleted PN-CCD's

    SciTech Connect

    Strueder, L.; Lutz, G.; Sterzik, M.; Holl, P.; Kemmer, J.; Prechtel, U.; Ziemann, T.; Rehak, P.

    1987-01-01

    We have fabricated 280 ..mu..m thick fully depletable pn CCD's on high resistivity silicon ()rho) approx. 2.5 k..cap omega..cm). Its operation is based on the semiconductor drift chamber principle proposed by Gatti and Rheak. They are designed as energy and position sensitive radiation detector for (minimum) ionizing particles and X-ray imaging. Two dimensional semiconductor device modeling demonstrates the basic charge transer mechanisms. Prototypes of the detectors have been tested in static and dynamic conditions. A preliminary charge transfer inefficiency was determined to 6 x 10)sup)minus)3). The charge loss during the transfer is discussed and as a consequence we have developed an improved design for a second fabrication iteration which is now being produced. 4 refs., 15 figs.

  4. Rectifying behaviour of spin coated pn hetero-junction

    SciTech Connect

    Yogamalar, N. Rajeswari; Bose, A. Chandra

    2015-06-24

    Rectifying pn hetero- junction is fabricated with an acceptor p-type organic semiconductor namely tetra- chloro dihydroxy tetra-iodo fluorescein (Rose Bengal (RB)) followed by an inorganic n-type ZnO semiconductor on indium tin oxide (ITO) substrate. The n-type ZnO films are formed by unintentional doping and doping with aluminium (Al) and yttrium (Y) donors. The surface morphology and the distribution of grains are observed from scanning electron microscopy (SEM) and atomic force microscopy (AFM). The current-voltage (I-V) characteristic of the rectifying diode is measured to characterize the junction properties. The I-V plots obtained from the hetero- junction with electric contact shows a diode characteristic different from that of an ideal behavior. The overall efficiency of the diode exhibits a greater dependency on the film crystallinity, carrier concentration, and reverse saturation current.

  5. Shallow mantle velocities beneath the southern Appalachians from Pn phases

    NASA Astrophysics Data System (ADS)

    MacDougall, Julia G.; Fischer, Karen M.; Forsyth, Donald W.; Hawman, Robert B.; Wagner, Lara S.

    2015-01-01

    constrain mantle structure that might contribute to the topography of the southern Appalachian Mountains, Pn phases from regional earthquakes recorded in northern Georgia by EarthScope Southeastern Suture of the Appalachian Margin Experiment and Transportable Array stations were used to solve for shallow mantle P wave velocities. Mantle velocities vary laterally, with values of 7.6-7.8 km/s beneath the higher elevations of the Blue Ridge terrane and northwestern flank of the Inner Piedmont terranes and values of 8.3-8.5 km/s farther south where elevation is lower. The zone of low-velocity mantle could represent a source of buoyancy that helps to support the higher elevations, in addition to the root of thickened crust that also exists beneath the mountains.

  6. Investigation of the transport properties and compositions of the Ca2RE7Pn5O5 series (RE=Pr, Sm, Gd, Dy; Pn=Sb, Bi)

    NASA Astrophysics Data System (ADS)

    Forbes, Scott; Yuan, Fang; Kosuda, Kosuke; Kolodiazhnyi, Taras; Mozharivskyj, Yurij

    2016-10-01

    The Ca2RE7Pn5O5 phases (RE=Pr, Sm, Gd, Dy; Pn=Sb, Bi) were successfully prepared from high temperature reactions at 1225-1300 °C. These phases maintain the same structure types as the parent RE9Pn5O5 phases, except for a Ca/RE mixing. The study and preparation of these phases was motivated by the desire to shift the metallic type properties of the parent RE9Pn5O5 phases to a level more suitable for thermoelectric applications. Electrical resistivity measurements performed on pure, bulk samples indicated all phases to be narrow band gap semiconductors or semimetals, supporting the charge balanced electron count of the Ca2RE7Pn5O5 composition. Unfortunately, all samples are too electrically resistive for any potential usage as thermoelectrics. Electronic band structure calculations performed on idealized RE9Pn5O5 structures revealed the presence of a pseudogap at the Fermi level, which is consistent with the observed electrical resistivity and Seebeck coefficient behavior.

  7. The empirical connection between (p,n) cross sections and beta decay transition strengths

    SciTech Connect

    Taddeucci, T.N.

    1988-01-01

    A proportionality is assumed to exist between 0/degree/ (p,n) cross sections and the corresponding beta decay transition strengths. The validity of this assumption is tested by comparison of measured (p,n) cross sections and analogous beta decay strengths. Distorted waves impulse approximation calculations also provide useful estimates of the accuracy of the proportionality relationship. 14 refs., 10 figs.

  8. An Investigation of NCLEX-PN Performance and Student Perceptions among Practical Nursing Graduates

    ERIC Educational Resources Information Center

    Abston-Coleman, Sharon L.; Levy, Dessie R.

    2010-01-01

    Students in practical nursing programs require 32 weeks of coursework (1 academic year) and completion of a national licensing exam (NCLEX-PN) to secure employment. The purpose of this study was to identify selected academic variables that were related to NCLEX-PN performance for first-time test takers of two types of practical nursing programs at…

  9. Gas Sensors Based on Ceramic p-n Heterocontacts

    SciTech Connect

    Aygun, Seymen Murat

    2005-01-01

    Ceramic p-n heterocontacts based on CuO/ZnO were successfully synthesized and a systematic study of their hydrogen sensitivity was conducted. The sensitivity and response rates of CuO/ZnO sensors were studied utilizing current-voltage, current-time, and impedance spectroscopy measurements. The heterocontacts showed well-defined rectifying characteristics and were observed to detect hydrogen via both dc and ac measurements. Surface coverage data were derived from current-time measurements which were then fit to a two-site Langmuir adsorption model quite satisfactorily. The fit suggested that there should be two energetically different adsorption sites in the system. The heterocontacts were doped in an attempt to increase the sensitivity and the response rate of the sensor. First, the effects of doping the p-type (CuO) on the sensor characteristics were investigated. Doping the p-type CuO with both acceptor and isovalent dopants greatly improved the hydrogen sensitivity. The sensitivity of pure heterocontact observed via I-V measurements was increased from ~2.3 to ~9.4 with Ni doping. Dopants also enhanced the rectifying characteristics of the heterocontacts. Small amounts of Li addition were shown to decrease the reverse bias (saturation) current to 0.2 mA at a bias level of -5V. No unambiguous trends were observed between the sensitivity, the conductivity, and the density of the samples. Comparing the two phase microstructure to the single phase microstructure there was no dramatic increase in the sensitivity. Kinetic studies also confirmed the improved sensor characteristics with doping. The dopants decreased the response time of the sensor by decreasing the response time of one of the adsorption sites. The n-type ZnO was doped with both acceptor and donor dopants. Li doping resulted in the degradation of the p-n junction and the response time of the sensor. However, the current-voltage behavior of Ga-doped heterocontacts showed the best rectifying characteristics

  10. Pronounced Photovoltaic Response from Multilayered Transition-Metal Dichalcogenides PN-Junctions.

    PubMed

    Memaran, Shahriar; Pradhan, Nihar R; Lu, Zhengguang; Rhodes, Daniel; Ludwig, Jonathan; Zhou, Qiong; Ogunsolu, Omotola; Ajayan, Pulickel M; Smirnov, Dmitry; Fernández-Domínguez, Antonio I; García-Vidal, Francisco J; Balicas, Luis

    2015-11-11

    Transition metal dichalcogenides (TMDs) are layered semiconductors with indirect band gaps comparable to Si. These compounds can be grown in large area, while their gap(s) can be tuned by changing their chemical composition or by applying a gate voltage. The experimental evidence collected so far points toward a strong interaction with light, which contrasts with the small photovoltaic efficiencies η ≤ 1% extracted from bulk crystals or exfoliated monolayers. Here, we evaluate the potential of these compounds by studying the photovoltaic response of electrostatically generated PN-junctions composed of approximately 10 atomic layers of MoSe2 stacked onto the dielectric h-BN. In addition to ideal diode-like response, we find that these junctions can yield, under AM-1.5 illumination, photovoltaic efficiencies η exceeding 14%, with fill factors of ~70%. Given the available strategies for increasing η such as gap tuning, improving the quality of the electrical contacts, or the fabrication of tandem cells, our study suggests a remarkable potential for photovoltaic applications based on TMDs.

  11. Nonperturbative contributions from complexified solutions in C PN -1 models

    NASA Astrophysics Data System (ADS)

    Fujimori, Toshiaki; Kamata, Syo; Misumi, Tatsuhiro; Nitta, Muneto; Sakai, Norisuke

    2016-11-01

    We discuss the nonperturbative contributions from real and complex saddle point solutions in the C P1 quantum mechanics with fermionic degrees of freedom, using the Lefschetz thimble formalism beyond the Gaussian approximation. We find bion solutions, which correspond to (complexified) instanton-anti-instanton configurations stabilized in the presence of the fermionic degrees of freedom. By computing the one-loop determinants in the bion backgrounds, we obtain the leading order contributions from both the real and complex bion solutions. To incorporate quasizero modes which become nearly massless in a weak coupling limit, we regard the bion solutions as well-separated instanton-anti-instanton configurations and calculate a complexified quasimoduli integral based on the Lefschetz thimble formalism. The nonperturbative contributions from the real and complex bions are shown to cancel out in the supersymmetric case and give an (expected) ambiguity in the nonsupersymmetric case, which plays a vital role in the resurgent trans-series. For nearly supersymmetric situations, evaluation of the Lefschetz thimble gives results in precise agreement with those of the direct evaluation of the Schrödinger equation. We also perform the same analysis for the sine-Gordon quantum mechanics and point out some important differences showing that the sine-Gordon quantum mechanics does not correctly describe the 1d limit of the C PN -1 field theory of R ×S1.

  12. Quinap and congeners: atropos PN ligands for asymmetric catalysis.

    PubMed

    Fernández, Elena; Guiry, Patrick J; Connole, Kieran P T; Brown, John M

    2014-06-20

    Among the range of P,N-chelating ligands that have been employed in asymmetric catalysis, those relying on atropisomerism for the stability of individual enantiomers form a definable class. These APN (atropos P,N) ligands require a specific type of biaryl, with one component carrying a pendant phosphine unit, most commonly diaryl substituted, and the other bearing an sp(2)-nitrogen adjacent to the biaryl link. When substituents in the biaryl inhibit rotation about the linking bond, stable nonracemizing six-membered ring chelates can be formed. This Perspective relates the background to the initial synthesis in 1993 of Quinap, the original member of the series, and initial observations on its effectiveness in asymmetric catalysis. The current state of play in development of syntheses of this and other members of the APN ligand family is assessed, and their applications in asymmetric catalysis are presented. These include hydroboration and diboration of alkenes, 1,3-dipolar cycloadditions, alkynylation of iminium salts in a three-component (A(3)) condensation, and conjugate additions of Cu acetylides.

  13. Background Studies for the pn-CCD Detector of CAST

    SciTech Connect

    Rodriguez, A.; Beltran, B.; Cebrian, S.; Gomez, H.; Irastorza, I. G.; Luzon, G.; Morales, J.; Ruz, J.; Villar, J. A.; Hartmann, R.; Kotthaus, R.; Klose, C.; Kuster, M.; Strueder, L.

    2007-03-28

    The CERN Axion Solar Telescope (CAST) experiment searches for axions from the Sun converted into photons with energies up to around 10 keV via the inverse Primakoff effect in the high magnetic field of a superconducting Large Hadron Collider (LHC) prototype magnet. A backside illuminated pn-CCD detector in conjunction with an X-ray mirror optics is one of the three detectors used in CAST to register the expected photon signal. Since this signal is very rare a detailed study of the detector background has been undertaken with the aim to understand and further reduce the background level of the detector. The analysis is based on measured data taken during the data taking period of 2003 and 2004 of CAST and on Monte Carlo simulations of background with different origin. The background study performed for this detector show that the level of background (8.00{+-}0.07)x10-5 counts cm-2 s-1 keV-1 between 1 and 7 keV is dominated by the external gamma background due to natural activities at the experimental site, while radioactive impurities in the detector itself and cosmic neutrons contribute with a smaller fraction.

  14. Cavitation tests with feed pump PN-1500-350

    SciTech Connect

    Chegurko, L.E.; Churbakova, G.I.; Gavrilova, V.M.; Vasil'ev, V.A.

    1984-05-01

    At the Ural Branch of the All-Union Thermotechnical Institute, the cavitation characteristics of the seven stage feed pump PN-1500-350 were obtained and analyzed. The pressure at the inlet was changed by a valve while the feed, the rotational frequency of the rotor, and the water temperature remained constant. In the tests of the pump, constant feed was ensured with the aid of a control valve, and water was not extracted from the first stage. By changing the pressure at the inlet with unchanged feed, determination was made of the permissible cavitation margin, marking the appearance of low-frequency vibrations of the rotor and a change of the amplitude of the pressure pulsations. The tests showed that when the cavitation margin is reduced to approximately 60m, the head of the first stage and the efficiency of the pump remained practically unchanged. The lowest possible pressure at the pump inlet was determined from the appearance of vibrations for axial shift. To this minimum pressure at the inlet correspond the cavitation margins of 67.6, 71.8, 72.3 and 73.3 m. The theoretical minimal permissible cavitation margin was determined by Rudnev's formula.

  15. Chaotic Behaviour of a Driven P-N Junction

    NASA Astrophysics Data System (ADS)

    Perez, Jose Maria

    The chaotic behavior of a driven p-n junction is experimentally examined. Bifurcation diagrams for the system are measured, showing period doubling bifurcations up to f/32, onset of chaos, reverse bifurcations of chaotic bands, and periodic windows. Some of the measured bifurcation diagrams are similar to the bifurcation diagram of the logistic map x(,n+1) = (lamda)x(,n)(1 - x(,n)). A return map is also measured showing approximately a one-dimensional map with a single extremum at low driving voltages. The intermittency route to chaos is experimentally observed to occur near a tangent bifurcation as the system approaches a period 5 window at (lamda) = (lamda)(,5). Data are presented for the dependence of the average laminar length on (epsilon) = (lamda)(,5) - (lamda), and for the probability distribution P(l) vs. l. The effects of additive stochastic noise on period doubling, chaos, windows, and intermittency are examined and are found to agree with the logistic model and universal predictions. Three examples of crisis of the attractor are observed. The crises occur when an unstable orbit intersects the chaotic attractor. A period adding sequence is reported in which wide periodic windows of period 2, 3, 4, ... are observed for increasing driving voltage. The initial period doubling cascade and the period adding sequence are compared to two theoretical models, with reasonable success.

  16. Titanium-dioxide nanotube p-n homojunction diode

    SciTech Connect

    Alivov, Yahya E-mail: pnagpal@colorado.edu; Ding, Yuchen; Singh, Vivek; Nagpal, Prashant E-mail: pnagpal@colorado.edu

    2014-12-29

    Application of semiconductors in functional optoelectronic devices requires precise control over their doping and formation of junction between p- and n-doped semiconductors. While doped thin films have led to several semiconductor devices, need for high-surface area nanostructured devices for photovoltaic, photoelectrochemical, and photocatalytic applications has been hindered by lack of desired doping in nanostructures. Here, we show titanium-dioxide (TiO{sub 2}) nanotubes doped with nitrogen (N) and niobium (Nb) as acceptors and donors, respectively, and formation of TiO{sub 2} nanotubes p-n homojunction. This TiO{sub 2}:N/TiO{sub 2}:Nb homojunction showed distinct diode-like behaviour with rectification ratio of 1115 at ±5 V and exhibited good photoresponse for ultraviolet light (λ = 365 nm) with sensitivity of 0.19 A/W at reverse bias of −5 V. These results can have important implications for development of nanostructured metal-oxide solar-cells, photodiodes, LED's, photocatalysts, and photoelectrochemical devices.

  17. Atomically thin p-n junctions with van der Waals heterointerfaces.

    PubMed

    Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M; Chen, Wenchao; Li, Yilei; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Nuckolls, Colin; Heinz, Tony F; Guo, Jing; Hone, James; Kim, Philip

    2014-09-01

    Semiconductor p-n junctions are essential building blocks for electronic and optoelectronic devices. In conventional p-n junctions, regions depleted of free charge carriers form on either side of the junction, generating built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes influenced by the spatial extent of this depletion region. With the advent of atomically thin van der Waals materials and their heterostructures, it is now possible to realize a p-n junction at the ultimate thickness limit. Van der Waals junctions composed of p- and n-type semiconductors--each just one unit cell thick--are predicted to exhibit completely different charge transport characteristics than bulk heterojunctions. Here, we report the characterization of the electronic and optoelectronic properties of atomically thin p-n heterojunctions fabricated using van der Waals assembly of transition-metal dichalcogenides. We observe gate-tunable diode-like current rectification and a photovoltaic response across the p-n interface. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances the collection of the photoexcited carriers. The atomically scaled van der Waals p-n heterostructures presented here constitute the ultimate functional unit for nanoscale electronic and optoelectronic devices.

  18. Synthesis, Crystal and Electronic Structures of the Pnictides AE3TrPn3 (AE = Sr, Ba; Tr = Al, Ga; Pn = P, As)

    DOE PAGES

    Stoyko, Stanislav; Voss, Leonard; He, Hua; ...

    2015-09-24

    New ternary arsenides AE3TrAs3 (AE = Sr, Ba; Tr = Al, Ga) and their phosphide analogs Sr3GaP3 and Ba3AlP3 have been prepared by reactions of the respective elements at high temperatures. Single-crystal X-ray diffraction studies reveal that Sr3AlAs3 and Ba3AlAs3 adopt the Ba3AlSb3-type structure (Pearson symbol oC56, space group Cmce, Z = 8). This structure is also realized for Sr3GaP3 and Ba3AlP3. Likewise, the compounds Sr3GaAs3 and Ba3GaAs3 crystallize with the Ba3GaSb3-type structure (Pearson symbol oP56, space group Pnma, Z = 8). Both structures are made up of isolated pairs of edge-shared AlPn4 and GaPn4 tetrahedra (Pn = pnictogen, i.e.,more » P or As), separated by the alkaline-earth Sr2+ and Ba2+ cations. In both cases, there are no homoatomic bonds, hence, regardless of the slightly different atomic arrangements, both structures can be rationalized as valence-precise [AE2+]3[Tr3+][Pn3-]3, or rather [AE2+]6[Tr2Pn6]12-, i.e., as Zintl phases.« less

  19. p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

    NASA Technical Reports Server (NTRS)

    Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

    2000-01-01

    A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

  20. Magnetic electron focusing and tuning of the electron current with a pn-junction

    SciTech Connect

    Milovanović, S. P. Ramezani Masir, M. Peeters, F. M.

    2014-01-28

    Transverse magnetic focusing properties of graphene using a ballistic four terminal structure are investigated. The electric response is obtained using the semiclassical billiard model. The transmission exhibits pronounced peaks as a consequence of skipping orbits at the edge of the structure. When we add a pn-junction between the two probes, snake states along the pn-interface appear. Injected electrons are guided by the pn-interface to one of the leads depending on the value of the applied magnetic field. Oscillations in the resistance are found depending on the amount of particles that end up in each lead.

  1. [Effects of combined application of nitrogen and phosphorus on diurnal variation of photosynthesis at grain-filling stage and grain yield of super high-yielding wheat].

    PubMed

    Zhao, Hai-bo; Lin, Qi; Liu, Yi-guo; Jiang, Wen; Liu, Jian-jun; Zhai, Yan-ju

    2010-10-01

    Taking super high-yielding wheat cultivar Jimai 22 as test material, a field experiment was conducted to study the effects of combined application of nitrogen (N) and phosphorus (P) on the diurnal variation of photosynthesis at grain-filling stage and the grain yield of the cultivar. In treatments CK (without N and P application) and low N/P application (225 kg N x hm(-2) and 75 kg P x hm(-2)), the diurnal variation of net photosynthetic rate (Pn) was presented as double-peak curve, and there existed obvious midday depression of photosynthesis. Under reasonable application of N/P (300 kg N x hm(-2) and 150 kg P x hm(-2), treatment N2P2), the midday depression of photosynthesis weakened or even disappeared. Stomatal and non-stomatal limitations could be the causes of the midday depression. Increasing N and P supply increased the Pn, stomatal conductance (Gs), stomatal limitation value (Ls), and transpiration rate (Tr). Fertilizer P had less effects on the photosynthesis, compared with fertilizer N. When the P supply was over 150 kg x hm(-2), the increment of Pn was alleviated and even decreased. Among the fertilization treatments, treatment N2P2 had the highest Pn, Gs, and water use efficiency, being significantly different from CK. It appeared that fertilizer N had greater regulatory effect on the diurnal variation of photosynthesis, compared with fertilizer P, while the combined application of N and P had significant co-effect on the Pn, Gs, and Tr. A combined application of 300 kg N x hm(-2) and 150 kg P x hm(-2) benefited the enhancement of Pn and grain yield.

  2. Many-body effects on optical gain in GaAsPN/GaPN quantum well lasers for silicon integration

    SciTech Connect

    Park, Seoung-Hwan

    2014-02-14

    Many-body effects on the optical gain in GaAsPN/GaP QW structures were investigated by using the multiband effective-mass theory and the non-Markovian gain model with many-body effects. The free-carrier model shows that the optical gain peak slightly increases with increasing N composition. In addition, the QW structure with a larger As composition shows a larger optical gain than that with a smaller As composition. On the other hand, in the case of the many-body model, the optical gain peak decreases with increasing N composition. Also, the QW structure with a smaller As composition is observed to have a larger optical gain than that with a larger As composition. This can be explained by the fact that the QW structure with a smaller As or N composition shows a larger Coulomb enhancement effect than that with a larger As or N composition. This means that it is important to consider the many-body effect in obtaining guidelines for device design issues.

  3. Snake states in graphene quantum dots in the presence of a p-n junction

    NASA Astrophysics Data System (ADS)

    Zarenia, M.; Pereira, J. M., Jr.; Peeters, F. M.; Farias, G. A.

    2013-01-01

    We investigate the magnetic interface states of graphene quantum dots that contain p-n junctions. Within a tight-binding approach, we consider rectangular quantum dots in the presence of a perpendicular magnetic field containing p-n as well as p-n-p and n-p-n junctions. The results show the interplay between the edge states associated with the zigzag terminations of the sample and the snake states that arise at the p-n junction due to the overlap between electron and hole states at the potential interface. Remarkable localized states are found at the crossing of the p-n junction with the zigzag edge having a dumb-bell-shaped electron distribution. The results are presented as a function of the junction parameters and the applied magnetic flux.

  4. Simulation of interface states effect on the scanning capacitance microscopy measurement of p-n junctions

    NASA Astrophysics Data System (ADS)

    Yang, J.; Kong, F. C. J.

    2002-12-01

    A two-dimensional numerical simulation model of interface states in scanning capacitance microscopy (SCM) measurements of p-n junctions is presented. In the model, amphoteric interface states with two transition energies in the Si band gap are represented as fixed charges to account for their behavior in SCM measurements. The interface states are shown to cause a stretch-out and a parallel shift of the capacitance-voltage characteristics in the depletion and neutral regions of p-n junctions, respectively. This explains the discrepancy between the SCM measurement and simulation near p-n junctions, and thus modeling interface states is crucial for SCM dopant profiling of p-n junctions.

  5. Part-Based Visual Tracking via Online Weighted P-N Learning

    PubMed Central

    Fan, Heng; Xiang, Jinhai; Xu, Jun

    2014-01-01

    We propose a novel part-based tracking algorithm using online weighted P-N learning. An online weighted P-N learning method is implemented via considering the weight of samples during classification, which improves the performance of classifier. We apply weighted P-N learning to track a part-based target model instead of whole target. In doing so, object is segmented into fragments and parts of them are selected as local feature blocks (LFBs). Then, the weighted P-N learning is employed to train classifier for each local feature block (LFB). Each LFB is tracked through the corresponding classifier, respectively. According to the tracking results of LFBs, object can be then located. During tracking process, to solve the issues of occlusion or pose change, we use a substitute strategy to dynamically update the set of LFB, which makes our tracker robust. Experimental results demonstrate that the proposed method outperforms the state-of-the-art trackers. PMID:25133228

  6. SEM observation of p-n junction in semiconductors using fountain secondary electron detector

    NASA Astrophysics Data System (ADS)

    Sekiguchi, Takashi; Kimura, Takashi; Iwai, Hideo

    2016-11-01

    When we observe a p-n junction in a certain semiconductors using scanning electron microscope, it is known that the p-type region is brighter than n-type region in secondary electron (SE) image. To clarify this origin, the p-n junctions in 4H-SiC was observed using fountain secondary electron detector (FSED). The original FSED image shows brighter p-region than n-region, which is similar to the SE image taken by Everhart-Thonley detector, mainly due to the background component of SE signal. By subtracting the background, the line profiles of FSED signal across p-n junction have been recorded according to the SE energies. These profiles may include the detailed information of p-n junction.

  7. Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

    SciTech Connect

    Imtiaz, Atif; Wallis, Thomas M.; Brubaker, Matt D.; Blanchard, Paul T.; Bertness, Kris A.; Sanford, Norman A.; Kabos, Pavel; Weber, Joel C.; Coakley, Kevin J.

    2014-06-30

    We used a broadband, atomic-force-microscope-based, scanning microwave microscope (SMM) to probe the axial dependence of the charge depletion in a p-n junction within a gallium nitride nanowire (NW). SMM enables the visualization of the p-n junction location without the need to make patterned electrical contacts to the NW. Spatially resolved measurements of S{sub 11}{sup ′}, which is the derivative of the RF reflection coefficient S{sub 11} with respect to voltage, varied strongly when probing axially along the NW and across the p-n junction. The axial variation in S{sub 11}{sup ′}  effectively mapped the asymmetric depletion arising from the doping concentrations on either side of the junction. Furthermore, variation of the probe tip voltage altered the apparent extent of features associated with the p-n junction in S{sub 11}{sup ′} images.

  8. Mass spectrometry method to identify aging pathways of Sp- and Rp-tabun adducts on human butyrylcholinesterase based on the acid labile P-N bond.

    PubMed

    Jiang, Wei; Cashman, John R; Nachon, Florian; Masson, Patrick; Schopfer, Lawrence M; Lockridge, Oksana

    2013-04-01

    The phosphoramidate nerve agent tabun inhibits butyrylcholinesterase (BChE) and acetylcholinesterase by making a covalent bond on the active site serine. The adduct loses an alkyl group in a process called aging. The mechanism of aging of the tabun adduct is controversial. Some studies claim that aging proceeds through deamination, whereas crystal structure studies show aging by O-dealkylation. Our goal was to develop a method that clearly distinguishes between deamination and O-dealkylation. We began by studying the tetraisopropyl pyrophosphoramide adduct of BChE because this adduct has two P-N bonds. Mass spectra showed that the P-N bonds were stable during trypsin digestion at pH 8 but were cleaved during pepsin digestion at pH 2. The P-N bond in tabun was also acid labile, whereas the P-O bond was stable. A scheme to distinguish aging by deamination from aging by O-dealkylation was based on the acid labile P-N bond. BChE was inhibited with Sp- and Rp-tabun thiocholine nerve agent model compounds to make adducts identical to those of tabun with known stereochemistry. After aging and digestion with pepsin at pH 2, peptide FGES198AGAAS from Sp-tabun thiocholine had a mass of 902.2 m/z in negative mode, indicating that it had aged by deamination, whereas peptide FGES198AGAAS from Rp-tabun thiocholine had a mass of 874.2 m/z in negative mode, indicating that it had aged by O-dealkylation. BChE inhibited by authentic, racemic tabun yielded both 902.2 and 874.2 m/z peptides, indicating that both stereoisomers reacted with BChE and aged either by deamination or dealkylation.

  9. Mass Spectrometry Method to Identify Aging Pathways of Sp- and Rp-Tabun Adducts on Human Butyrylcholinesterase Based on the Acid Labile P-N Bond

    PubMed Central

    Lockridge, Oksana

    2013-01-01

    The phosphoramidate nerve agent tabun inhibits butyrylcholinesterase (BChE) and acetylcholinesterase by making a covalent bond on the active site serine. The adduct loses an alkyl group in a process called aging. The mechanism of aging of the tabun adduct is controversial. Some studies claim that aging proceeds through deamination, whereas crystal structure studies show aging by O-dealkylation. Our goal was to develop a method that clearly distinguishes between deamination and O-dealkylation. We began by studying the tetraisopropyl pyrophosphoramide adduct of BChE because this adduct has two P-N bonds. Mass spectra showed that the P-N bonds were stable during trypsin digestion at pH 8 but were cleaved during pepsin digestion at pH 2. The P-N bond in tabun was also acid labile, whereas the P-O bond was stable. A scheme to distinguish aging by deamination from aging by O-dealkylation was based on the acid labile P-N bond. BChE was inhibited with Sp- and Rp-tabun thiocholine nerve agent model compounds to make adducts identical to those of tabun with known stereochemistry. After aging and digestion with pepsin at pH 2, peptide FGES198AGAAS from Sp-tabun thiocholine had a mass of 902.2 m/z in negative mode, indicating that it had aged by deamination, whereas peptide FGES198AGAAS from Rp-tabun thiocholine had a mass of 874.2 m/z in negative mode, indicating that it had aged by O-dealkylation. BChE inhibited by authentic, racemic tabun yielded both 902.2 and 874.2 m/z peptides, indicating that both stereoisomers reacted with BChE and aged either by deamination or dealkylation. PMID:23345579

  10. Detection of interstellar PN - The first phosphorus-bearing species observed in molecular clouds

    NASA Technical Reports Server (NTRS)

    Ziurys, L. M.

    1987-01-01

    Phosphorus nitride (PN) has been detected in the interstellar medium. The J = 2-1, 3-2, 5-4, and 6-5 rotational lines of this species have been observed toward Orion-KL, and the J = 2-1 transition in Sgr B2 and W51. The PN line profiles in Orion indicate that the molecule's emission arises from the 'plateau' or 'doughnut' region associated with the outflow from IRc2. The species is thus primarily present in hot, dense gas. Column densities derived for PN toward Orion-KL are (3-4) x 10 to the 13th/sq cm, but may be as high as 10 to the 14th/sq cm, if the species is located in a 10-arcsec region. These column densities imply a fractional abundance for PN in the Orion 'plateau' of (1-4) x 10 to the -10th. Such a large abundance for PN is not predicted by quiescent cloud ion-molecule chemistry and suggests that high-temperature processes are responsible for the synthesis of PN in the KL outflow.

  11. Dynamic visualization of axial p-n junctions in single gallium nitride nanorods under electrical bias.

    PubMed

    Lu, Yu-Jung; Lu, Ming-Yen; Yang, Yu-Chen; Chen, Hung-Ying; Chen, Lih-Juann; Gwo, Shangjr

    2013-09-24

    We demonstrate a direct visualization method based on secondary electron (SE) imaging in scanning electron microscopy for mapping electrostatic potentials across axial semiconductor nanorod p-n junctions. It is found that the SE doping contrast can be directly related to the spatial distribution of electrostatic potential across the axial nanorod p-n junction. In contrast to the conventional SE doping contrast achieved for planar p-n junctions, the quasi-one-dimensional geometry of nanorods allows for high-resolution, versatile SE imaging under high accelerating voltage, long working distance conditions. Furthermore, we are able to delineate the electric field profiles across the axial nanorod p-n junction as well as depletion widths at different reverse biases. By using standard p-n junction theory and secondary ion mass spectroscopy, the carrier concentrations of p- and n-regions can be further extracted from the depletion widths under reverse biasing conditions. This direct imaging method enables determination of electrostatic potential variation of p-n junctions in semiconductor nanorod and nanowire devices with a spatial resolution better than 10 nm.

  12. Synthesis, Crystal and Electronic Structures of the Pnictides AE3TrPn3 (AE = Sr, Ba; Tr = Al, Ga; Pn = P, As)

    SciTech Connect

    Stoyko, Stanislav; Voss, Leonard; He, Hua; Bobev, Svilen

    2015-09-24

    New ternary arsenides AE3TrAs3 (AE = Sr, Ba; Tr = Al, Ga) and their phosphide analogs Sr3GaP3 and Ba3AlP3 have been prepared by reactions of the respective elements at high temperatures. Single-crystal X-ray diffraction studies reveal that Sr3AlAs3 and Ba3AlAs3 adopt the Ba3AlSb3-type structure (Pearson symbol oC56, space group Cmce, Z = 8). This structure is also realized for Sr3GaP3 and Ba3AlP3. Likewise, the compounds Sr3GaAs3 and Ba3GaAs3 crystallize with the Ba3GaSb3-type structure (Pearson symbol oP56, space group Pnma, Z = 8). Both structures are made up of isolated pairs of edge-shared AlPn4 and GaPn4 tetrahedra (Pn = pnictogen, i.e., P or As), separated by the alkaline-earth Sr2+ and Ba2+ cations. In both cases, there are no homoatomic bonds, hence, regardless of the slightly different atomic arrangements, both structures can be rationalized as valence-precise [AE2+]3[Tr3+][Pn3-]3, or rather [AE2+]6[Tr2Pn6]12-, i.e., as Zintl phases.

  13. Preparation and activity evaluation of p-n junction photocatalyst NiO/TiO2.

    PubMed

    Shifu, Chen; Sujuan, Zhang; Wei, Liu; Wei, Zhao

    2008-06-30

    p-n Junction photocatalyst NiO/TiO2 was prepared by sol-gel method using Ni(NO3)2.6H2O and tetrabutyl titanate [Ti(OC4H9)4] as the raw materials. The p-n junction photocatalyst NiO/TiO2 was characterized by UV-vis diffuse reflection spectrum, X-ray powder diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of the photocatalyst was evaluated by photocatalytic reduction of Cr2O7(2-) and photocatalytic oxidation of rhodamine B. The results show that, for photocatalytic reduction of Cr2O7(2-), the optimum percentage of doped-NiO is 0.5% (mole ratio of Ni/Ti). The photocatalytic activity of the p-n junction NiO/TiO2 is much higher than that of TiO2 on the photocatalytic reduction of Cr2O7(2-). However, the photocatalytic activity of the p-n junction photocatalyst NiO/TiO2 is much lower than that of TiO2 on the photocatalytic oxidation of rhodamine B. Namely, the p-n junction photocatalyst NiO/TiO2 has higher photocatalytic reduction activity, but lower photocatalytic oxidation activity. Effects of heat treatment on the photocatalytic activity of p-n junction photocatalyst NiO/TiO2 were investigated. The mechanisms of influence on the photocatalytic activity were also discussed by the p-n junction principle.

  14. Observations of the Magnitude Dependence of Pn/Lg Ratios from Underground Explosions in Central Asia

    NASA Astrophysics Data System (ADS)

    Xie, J.; Patton, H. J.; Kim, W.

    2001-12-01

    Xie and Patton (1999, JGR) developed scaling relationships for seismic moment M0 and corner frequency fc determined from Pn and Lg spectra for many explosions and earthquakes located in central Asia. Scaling relationships were found to depend on the phase and the source type. Pn/Lg ratios ratios are predicted to increase significantly in a frequency range determined by Lg fc (lower limit) and Pn fc (upper limit). The increase slows down or stops outside this frequency range, and the range shifts to higher frequency with decreasing event magnitude. As a result, ratios from smaller events reach maxima at higher frequencies than do larger events. This predicted magnitude-dependent frequency shift of Pn/Lg ratios has been marked by controversy over whether direct observations support it or not. Here we summarize results from direct observations of Pn/Lg spectral ratios for Semipalatinsk and Lop Nor explosions. These observations include (1) ratios from Lop Nor explosions between 1992-1996 recorded on multiple broad-band stations, (2) ratios from Semipalatinsk explosions between 1987-1989 recorded on the Chinese station WMQ, (3) ratios from chemical explosions at Semipalatinsk between 1997-1999 recorded on broad-band Kazakhstan network stations, and (4) ratios from Semipalatinsk explosions between 1987-1989 from the Borovoye Digital Seismogram Archive (Kim et al., 2001). Pn/Lg ratios are stacked in three event populations with mb values of ~ 6.0, 5.0 and 4.0, respectively. Additionally, Pn/Lg ratios are available from multiple stations from a mb=6.6 explosion. The stacked ratios are compared with one another for near-repeated paths or for paths for which corrections are known based on path Q-inversions. All of the stacked Pn/Lg ratios show magnitude-dependence and statistically support the predicted magnitude-dependent frequency shift. The observations also indicate more complexity in Pn/Lg ratios from the mb ~ 4 population, which is largely made up of recent chemical

  15. Ternary CaCu{sub 4}P{sub 2}-type pnictides AAg{sub 4}Pn{sub 2} (A=Sr, Eu; Pn=As, Sb)

    SciTech Connect

    Stoyko, Stanislav S.; Khatun, Mansura; Scott Mullen, C.; Mar, Arthur

    2012-08-15

    Four ternary pnictides AAg{sub 4}Pn{sub 2} (A=Sr, Eu; Pn=As, Sb) were prepared by reactions of the elements at 850 Degree-Sign C and their crystal structures were determined from single-crystal X-ray diffraction studies. These silver-containing pnictides AAg{sub 4}Pn{sub 2} adopt the trigonal CaCu{sub 4}P{sub 2}-type structure (Pearson symbol hR21, space group R3-bar m, Z=3; a=4.5555(6) A, c=24.041(3) A for SrAg{sub 4}As{sub 2}; a=4.5352(2) A, c=23.7221(11) A for EuAg{sub 4}As{sub 2}; a=4.7404(4) A, c=25.029(2) A for SrAg{sub 4}Sb{sub 2}; a=4.7239(3) A, c=24.689(2) A for EuAg{sub 4}Sb{sub 2}), which can be derived from the trigonal CaAl{sub 2}Si{sub 2}-type structure of the isoelectronic zinc-containing pnictides AZn{sub 2}Pn{sub 2} by insertion of additional Ag atoms into trigonal planar sites within [M{sub 2}Pn{sub 2}]{sup 2-} slabs built up of edge-sharing tetrahedra. Band structure calculations on SrAg{sub 4}As{sub 2} and SrAg{sub 4}Sb{sub 2} revealed that these charge-balanced Zintl phases actually exhibit no gap at the Fermi level and are predicted to be semimetals. - Graphical abstract: SrAg{sub 4}As{sub 2} and related pnictides adopt a CaCu{sub 4}P{sub 2}-type structure in which additional Ag atoms enter trigonal planar sites within slabs built from edge-sharing tetrahedra. Highlights: Black-Right-Pointing-Pointer AAg{sub 4}Pn{sub 2} are the first Ag-containing members of the CaCu{sub 4}P{sub 2}-type structure. Black-Right-Pointing-Pointer Ag atoms are stuffed in trigonal planar sites within CaAl{sub 2}Si{sub 2}-type slabs. Black-Right-Pointing-Pointer Ag-Ag bonding develops through attractive d{sup 10}-d{sup 10} interactions.

  16. pn-Junction Delineation in Si Devices Using Scanning Capacitance Spectroscopy

    NASA Astrophysics Data System (ADS)

    Edwards, Hal

    2000-03-01

    The scanning capacitance microscope (SCM) is a carrier-sensitive imaging tool based upon the well-known scanning-probe microscope (SPM). Scanning capacitance spectroscopy (SCS) is a new way to utilize an SCM to delineate pn junctions in Si devices. SCS produces two-dimensional pn-junction maps that show features as small as 10 nm. SCS also provides an estimate of the pn-junction depletion width and hence the doping level near the pn junction. We report SCS measurements of deep-submicron field-effect transistors, showing the source-drain extender profile. We show SCM and SCS data in a failure-analysis application, in which we determined the cause of a leaky field-effect transistor. SCM and SCS are powerful tools for Si bipolar transistors, in which the doping-related structures are quite complex. We show microscopic evidence of the narrow-emitter effect, and image the width of the pn junction to explain an electric field-induced hot-carrier reliability issue. We show a comparison of top-view and cross-sectional SCS measurements of nwell-nwell shallow-trench isolation structures, to reveal the effects of photoresist scumming in sub-design-rule isolation widths. We show initial results on a method to delineate constant-potential contours within the depletion region. We discuss the limits to our present understanding of SCM and SCS and some potential sources of error.

  17. Quantum-Transport Characteristics of a p-n Junction on Single-Layer TiS3.

    PubMed

    Iyikanat, Fadil; Senger, Ramazan T; Peeters, Francois M; Sahin, Hasan

    2016-12-05

    By using density functional theory and non-equilibrium Green's function-based methods, we investigated the electronic and transport properties of a TiS3 monolayer p-n junction. We constructed a lateral p-n junction on a TiS3 monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 p-n junction. In addition, the spin-dependent current-voltage characteristics of the constructed TiS3 p-n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3 p-n junction. These prominent conduction properties of the TiS3 p-n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material.

  18. Comparison of the pn quasiparticle RPA and shell model for Gamow-Teller beta and double-beta decays

    NASA Astrophysics Data System (ADS)

    Zhao, Liang; Brown, B. Alex

    1993-06-01

    We examine the validity of the pn quasiparticle RPA (pnQRPA) as a model for calculating β+ and 2νββ Gamow-Teller decays by making a comparison of the pnQRPA with a large-basis shell-model calculation within the 0f1p shell. We employ A=46 nuclei (those with six valence nucleons) for this comparison. Our comparison includes the decay matrix elements summed over final states, the strength distributions, and, for the first time, the coherent transition matrix elements (CTME). The pnQRPA overestimates the total β+ and 2νββ matrix elements. There are large differences in the shape of the spectra as well as in the CTME between the pnQRPA and shell-model results. Empirical improvements for the pnQRPA are discussed.

  19. Comparison of the [ital pn] quasiparticle RPA and shell model for Gamow-Teller beta and double-beta decays

    SciTech Connect

    Zhao, L.; Brown, B.A. )

    1993-06-01

    We examine the validity of the [ital pn] quasiparticle RPA ([ital pn]QRPA) as a model for calculating [beta][sup +] and 2[nu][beta][beta] Gamow-Teller decays by making a comparison of the [ital pn]QRPA with a large-basis shell-model calculation within the 0[ital f]1[ital p] shell. We employ [ital A]=46 nuclei (those with six valence nucleons) for this comparison. Our comparison includes the decay matrix elements summed over final states, the strength distributions, and, for the first time, the coherent transition matrix elements (CTME). The [ital pn]QRPA overestimates the total [beta][sup +] and 2[nu][beta][beta] matrix elements. There are large differences in the shape of the spectra as well as in the CTME between the [ital pn]QRPA and shell-model results. Empirical improvements for the [ital pn]QRPA are discussed.

  20. Plasmid pCBI carries genes for anaerobic benzoate catabolism in Alcaligenes xylosoxidans subsp. denitrificans PN-1.

    PubMed Central

    Blake, C K; Hegeman, G D

    1987-01-01

    Pseudomonas sp. strain PN-1 is reclassified as Alcaligenes xylosoxidans subsp. denitrificans PN-1. Strain PN-1 is a gram-negative, rod-shaped organism, is motile by means of lateral flagella, is oxidase positive, and does not ferment sugars. Plasmid pCBI, carrying genes for the anaerobic degradation of benzoate in strain PN-1, is 17.4 kilobase pairs in length and is transmissible to a number of denitrifying Pseudomonas aeruginosa and Pseudomonas stutzeri strains. A restriction endonuclease map was constructed. PMID:2822651

  1. The effects of notch filters on the correlation properties of a PN signal

    NASA Technical Reports Server (NTRS)

    Sussman, S. M.; Ferrari, E. J.

    1974-01-01

    With wideband pseudo-noise (PN) communications systems, it is sometimes desirable to supplement the inherent interference rejection capabilities by adding notch filters to attenuate relatively narrowband interference. This correspondence presents an investigation of the effects of notch filters on the performance of PN correlation receivers. A theoretical analysis of the correlation drop due to filter distortion has been conducted and confirmed by experimentation. Additional measurements and analysis have established the trade-off between correlation drop and interference suppression as a function of interference bandwidth. A typical result is that by incurring a penalty of a 1-dB drop in correlation peak, interfering signals having bandwidths of 2 to 3% of the PN chip rate can be attenuated by 25 dB.

  2. Identification of PN1, a Predominant Voltage-Dependent Sodium Channel Expressed Principally in Peripheral Neurons

    NASA Astrophysics Data System (ADS)

    Toledo-Aral, Juan J.; Moss, Brenda L.; He, Zhi-Jun; Koszowski, Adam G.; Whisenand, Teri; Levinson, Simon R.; Wolf, John J.; Silos-Santiago, Inmaculada; Halegoua, Simon; Mandel, Gail

    1997-02-01

    Membrane excitability in different tissues is due, in large part, to the selective expression of distinct genes encoding the voltage-dependent sodium channel. Although the predominant sodium channels in brain, skeletal muscle, and cardiac muscle have been identified, the major sodium channel types responsible for excitability within the peripheral nervous system have remained elusive. We now describe the deduced primary structure of a sodium channel, peripheral nerve type 1 (PN1), which is expressed at high levels throughout the peripheral nervous system and is targeted to nerve terminals of cultured dorsal root ganglion neurons. Studies using cultured PC12 cells indicate that both expression and targeting of PN1 is induced by treatment of the cells with nerve growth factor. The preferential localization suggests that the PN1 sodium channel plays a specific role in nerve excitability.

  3. Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector

    NASA Astrophysics Data System (ADS)

    Xia, Hui; Li, Tian-Xin; Tang, Heng-Jing; Zhu, Liang; Li, Xue; Gong, Hai-Mei; Lu, Wei

    2016-02-01

    Electronic layout, such as distributions of charge carriers and electric field, in PN junction is determinant for the photovoltaic devices to realize their functionality. Considerable efforts have been dedicated to the carrier profiling of this specific region with Scanning Probe Microscope, yet reliable analysis was impeded by the difficulty in resolving carriers with high mobility and the unclear surface effect, particularly on compound semiconductors. Here we realize nanometer Scanning Capacitance Microscopic study on the cross-section of InGaAs/InP photodetctors with the featured dC/dV layout of PN junction unveiled for the first time. It enables us to probe the photo-excited minority carriers in junction region and diagnose the performance deficiency of the diode devices. This work provides an illuminating insight into the PN junction for assessing its basic capability of harvesting photo-carriers as well as blocking leakage current in nanoscopic scale.

  4. Fast Risetime Reverse Bias Pulse Failures in SiC PN Junction Diodes

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Fazi, Christian; Parsons, James D.

    1996-01-01

    SiC-based high temperature power devices are being developed for aerospace systems which will require high reliability. One behavior crucial to power device reliability. To date, it has necessarily been assumed to date is that the breakdown behavior of SiC pn junctions will be similar to highly reliable silicon-based pn junctions. Challenging this assumption, we report the observation of anomalous unreliable reverse breakdown behavior in moderately doped (2-3 x 10(exp 17) cm(exp -3)) small-area 4H- and 6H-SiC pn junction diodes at temperatures ranging from 298 K (25 C) to 873 K (600 C). We propose a mechanism in which carrier emission from un-ionized dopants and deep level defects leads to this unstable behavior. The fundamental instability mechanism is applicable to all wide bandgap semiconductors whose dopants are significantly un-ionized at typical device operating temperatures.

  5. Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector

    PubMed Central

    Xia, Hui; Li, Tian-Xin; Tang, Heng-Jing; Zhu, Liang; Li, Xue; Gong, Hai-Mei; Lu, Wei

    2016-01-01

    Electronic layout, such as distributions of charge carriers and electric field, in PN junction is determinant for the photovoltaic devices to realize their functionality. Considerable efforts have been dedicated to the carrier profiling of this specific region with Scanning Probe Microscope, yet reliable analysis was impeded by the difficulty in resolving carriers with high mobility and the unclear surface effect, particularly on compound semiconductors. Here we realize nanometer Scanning Capacitance Microscopic study on the cross-section of InGaAs/InP photodetctors with the featured dC/dV layout of PN junction unveiled for the first time. It enables us to probe the photo-excited minority carriers in junction region and diagnose the performance deficiency of the diode devices. This work provides an illuminating insight into the PN junction for assessing its basic capability of harvesting photo-carriers as well as blocking leakage current in nanoscopic scale. PMID:26892069

  6. Strong Excitonic Emission from (001)-Oriented Diamond P-N Junction

    NASA Astrophysics Data System (ADS)

    Makino, Toshiharu; Kato, Hiromitsu; Ogura, Masahiko; Watanabe, Hideyuki; Ri, Sung-Gi; Yamasaki, Satoshi; Okushi, Hideyo

    2005-09-01

    We have succeeded in fabricating (001)-oriented diamond p-n junctions with good diode characteristics and realized UV light emission by current-injection at room temperature. As p-n junctions, a phosphorus-doped n-type layer was formed on (001)-oriented boron-doped p-type one by applying an optimized homoepitaxial growth technique based on micro-wave plasma-enhanced chemical vapor deposition. Current-voltage characteristics showed a rectification ratio of 106 at ± 30 V at room temperature. The existence of the space-charge layer through the p-n junction was confirmed from capacitance--voltage characteristics. A strong UV light emission at 235 nm was observed at forward current over 20 mA and is attributed to free exciton recombination.

  7. Security of Classic PN-Spreading Codes for Hybrid DS/FH Spread-Spectrum Systems

    SciTech Connect

    Ma, Xiao; Olama, Mohammed M; Kuruganti, Phani Teja; Smith, Stephen Fulton; Djouadi, Seddik M

    2013-01-01

    Hybrid direct sequence/frequency hopping (DS/FH) spread-spectrum communication systems have recently received considerable interest in commercial applications in addition to their use in military communications because they accommodate high data rates with high link integrity, even in the presence of significant multipath effects and interfering signals. The security of hybrid DS/FH systems strongly depends on the choice of PN-spreading code employed. In this paper, we examine the security, in terms of unicity distance, of linear maximal-length, Gold, and Kasami PN-spreading codes for DS, FH, and hybrid DS/FH spread-spectrum systems without additional encryption methods. The unicity distance is a measure of the minimum amount of ciphertext required by an eavesdropper to uniquely determine the specific key used in a cryptosystem and hence break the cipher. Numerical results are presented to compare the security of the considered PN-spreading codes under known-ciphertext attacks.

  8. HST/WFPC2 Observations of the Core of KjPn 8

    NASA Astrophysics Data System (ADS)

    López, José Alberto; Meaburn, John; Rodríguez, Luis F.; Vázquez, Roberto; Steffen, Wolfgang; Bryce, Myfanwy

    Narrow-band images of the core of the extraordinary poly-polar planetary nebula KjPn 8 have been obtained with the WFPC2 camera on board the Hubble Space Telescope. Spasmodic bipolar ejections, in changing directions have occurred over thousands of years to create KjPn 8. The central star is finally revealed in these observations and its compact nebular core is resolved into a remarkably young ≍ 500 years old, elliptical ionized ring. The highest speed bipolar outflows are perpendicular to this central ring which is identified as the latest event in the creation of this nebula. The formation history of KjPn 8 has involved two distinct planetary nebula-like events, probably originating from a binary core evolution with components of similar mass.

  9. Veselago lensing in graphene with a p-n junction: Classical versus quantum effects

    SciTech Connect

    Milovanović, S. P. Moldovan, D. Peeters, F. M.

    2015-10-21

    The feasibility of Veselago lensing in graphene with a p-n junction is investigated numerically for realistic injection leads. Two different set-ups with two narrow leads are considered with absorbing or reflecting side edges. This allows us to separately determine the influence of scattering on electron focusing for the edges and the p-n interface. Both semiclassical and tight-binding simulations show a distinctive peak in the transmission probability that is attributed to the Veselago lensing effect. We investigate the robustness of this peak on the width of the injector, the position of the p-n interface, and different gate potential profiles. Furthermore, the influence of scattering by both short- and long-range impurities is considered.

  10. Two-dimensional dopant profiling of gallium nitride p-n junctions by scanning capacitance microscopy

    NASA Astrophysics Data System (ADS)

    Lamhamdi, M.; Cayrel, F.; Frayssinet, E.; Bazin, A. E.; Yvon, A.; Collard, E.; Cordier, Y.; Alquier, D.

    2016-04-01

    Two-dimensional imaging of dopant profiles for n and p-type regions are relevant for the development of new power semiconductors, especially for gallium nitride (GaN) for which classical profiling techniques are not adapted. This is a challenging task since it needs a technique with simultaneously good sensitivity, high spatial resolution and high dopant gradient resolution. To face these challenges, scanning capacitance microscopy combined with Atomic Force Microscopy is a good candidate, presenting reproducible results, as demonstrated in literature. In this work, we attempt to distinguish reliably and qualitatively the various doping concentrations and type at p-n and unipolar junctions. For both p-n and unipolar junctions three kinds of samples were prepared and measured separately. The space-charge region of the p-n metallurgical junction, giving rise to different contrasts under SCM imaging, is clearly observed, enlightening the interest of the SCM technique.

  11. Epitaxial Growth of an Organic p-n Heterojunction: C60 on Single-Crystal Pentacene.

    PubMed

    Nakayama, Yasuo; Mizuno, Yuta; Hosokai, Takuya; Koganezawa, Tomoyuki; Tsuruta, Ryohei; Hinderhofer, Alexander; Gerlach, Alexander; Broch, Katharina; Belova, Valentina; Frank, Heiko; Yamamoto, Masayuki; Niederhausen, Jens; Glowatzki, Hendrik; Rabe, Jürgen P; Koch, Norbert; Ishii, Hisao; Schreiber, Frank; Ueno, Nobuo

    2016-06-01

    Designing molecular p-n heterojunction structures, i.e., electron donor-acceptor contacts, is one of the central challenges for further development of organic electronic devices. In the present study, a well-defined p-n heterojunction of two representative molecular semiconductors, pentacene and C60, formed on the single-crystal surface of pentacene is precisely investigated in terms of its growth behavior and crystallographic structure. C60 assembles into a (111)-oriented face-centered-cubic crystal structure with a specific epitaxial orientation on the (001) surface of the pentacene single crystal. The present experimental findings provide molecular scale insights into the formation mechanisms of the organic p-n heterojunction through an accurate structural analysis of the single-crystalline molecular contact.

  12. Synthesis, crystal structure, and magnetic properties of quaternary iron selenides: Ba2FePnSe5 (Pn=Sb, Bi)

    NASA Astrophysics Data System (ADS)

    Wang, Jian; Greenfield, Joshua T.; Kovnir, Kirill

    2016-10-01

    Two new barium iron pnictide-selenides, Ba2FeSbSe5 and Ba2FeBiSe5, were synthesized by a high-temperature solid-state route and their crystal structures were determined using single crystal X-ray diffraction. Both compounds are isomorphic to the high pressure phase Ba3FeS5 and crystallize in the orthorhombic space group Pnma (No. 62) with cell parameters of a=12.603(2)/12.619(2) Å, b=9.106(1)/9.183(1) Å, c=9.145(1)/9.123(1) Å and Z=4 for Ba2FeSbSe5 and Ba2FeBiSe5, respectively. According to differential scanning calorimetry, Ba2FePnSe5 compounds exhibit high thermal stability and melt congruently at 1055(5) K (Pn=Sb) and 1105(5) K (Pn=Bi). Magnetic characterizations reveal strong antiferromagnetic nearest-neighbor interactions in both compounds resulting in an antiferromagnetic ordering at 58(1) K for Ba2FeSbSe5 and 79(2) K for Ba2FeBiSe5. The magnetic interactions between Fe3+ centers, which are at least 6 Å apart from each other, are mediated by superexchange interactions.

  13. Laser direct writing of modulation-doped nanowire p/n junctions.

    PubMed

    Nam, Woongsik; Mitchell, James I; Xu, Xianfan

    2016-12-02

    We demonstrate a single-step, laser-based technique to fabricate axial modulation-doped silicon nanowires. Our method is based on laser-direct-write chemical vapor deposition and has the capability to fabricate nanowires as small as 60 nm, which is far below the diffraction limit of the laser wavelength of 395 nm, with precise control of nanowire position, length, and orientation. By switching dopant gases during nanowire writing, p-n junction nanowires are produced. The p-n junction nanowires are fabricated into multifinger devices with parallel metal contacts and electrically tested to demonstrate diode characteristics.

  14. A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2.

    PubMed

    Jin, Youngjo; Keum, Dong Hoon; An, Sung-Jin; Kim, Joonggyu; Lee, Hyun Seok; Lee, Young Hee

    2015-10-07

    A MoSe2 p-n diode with a van der Waals homojunction is demonstrated by stacking undoped (n-type) and Nb-doped (p-type) semiconducting MoSe2 synthesized by chemical vapor transport for Nb substitutional doping. The p-n diode reveals an ideality factor of ≈1.0 and a high external quantum efficiency (≈52%), which increases in response to light intensity due to the negligible recombination rate at the clean homojunction interface.

  15. Consciousness loss during epileptogenesis: implication for VLPO-PnO circuits

    PubMed Central

    Feng, Maohui; He, Zhigang; Liu, Baowen; Li, Zhixiao; Tao, Guorong; Wu, Duozhi; Xiang, Hongbing

    2017-01-01

    There is a growing concern about consciousness loss during epileptic seizures. Understanding neural mechanisms could lead to a better comprehension of cerebral circuit function in the control of consciousness loss in intractable epilepsy. We propose that ventrolateral preoptic area (VLPO)- PnO (nucleus pontis oralis) circuits may serve a major role in the loss of consciousness in drug-refractory epilepsy. Future behavioural and neuroimaging studies are clearly needed to understand the functional connectivity between the VLPO and PnO during loss of consciousness in drug-refractory epilepsy, to greatly prevent unconsciousness in this disorder and improve the quality of life in patients with intractable epilepsy. PMID:28337311

  16. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  17. Solution of transport equations in layered media with refractive index mismatch using the PN-method.

    PubMed

    Phillips, Kevin G; Jacques, Steven L

    2009-10-01

    The PN-method is a spectral discretization technique used to obtain numerical solutions to the radiative transport equation. To the best of our knowledge, the PN-method has yet to be generalized to the case of refractive index mismatch in layered slabs used to numerically simulate skin. Our main contribution is the application of a collocation method that takes into account refractive index mismatch at layer interfaces. The stability, convergence, and accuracy of the method are established. Example calculations demonstrating the flexibility of the method are performed.

  18. Visualizing the photovoltaic behavior of a type-II p-n heterojunction superstructure

    NASA Astrophysics Data System (ADS)

    Xing, Juanjuan; Takeguchi, Masaki; Hashimoto, Ayako; Cao, Junyu; Ye, Jinhua

    2014-04-01

    Photovoltaic behavior of a CaFe2O4/ZnFe2O4 p-n multi-junction was investigated with electron holography combined with an in situ light irradiation system. Potential profiles of the samples with and without light irradiation were extracted to measure the open circuit photovoltage generated either by the whole heterojunction superstructure or from each p-n junction. Investigation on the variation in the energy band configuration under light irradiation revealed the mechanism involved in the photoelectric effect, with respect to the properties of the heterojunction and its periodic quantum structure.

  19. Visualizing the photovoltaic behavior of a type-II p-n heterojunction superstructure

    SciTech Connect

    Xing, Juanjuan; Takeguchi, Masaki; Hashimoto, Ayako; Cao, Junyu; Ye, Jinhua

    2014-04-21

    Photovoltaic behavior of a CaFe{sub 2}O{sub 4}/ZnFe{sub 2}O{sub 4} p-n multi-junction was investigated with electron holography combined with an in situ light irradiation system. Potential profiles of the samples with and without light irradiation were extracted to measure the open circuit photovoltage generated either by the whole heterojunction superstructure or from each p-n junction. Investigation on the variation in the energy band configuration under light irradiation revealed the mechanism involved in the photoelectric effect, with respect to the properties of the heterojunction and its periodic quantum structure.

  20. Transfer to the continuum calculations of quasifree (p,pn) and (p,2p) reactions

    NASA Astrophysics Data System (ADS)

    Gomez-Ramos, M.; Moro, A. M.

    2016-05-01

    Nucleon removal (p, pn) and (p, 2p) reactions at intermediate energies have gained renewed attention in recent years as a tool to extract information from exotic nuclei. The information obtained from these experiments is expected to be sensitive to deeper portions of the wave function of the removed nucleon than knockout reactions with heavier targets. In this contribution, we present calculations for (p, 2p) and (p, pn) reactions performed within the so-called transfer to the continuum method (TR*). Results for stable and unstable nuclei are presented, and compared with experimental data, when available.

  1. A critical test of organic P-N photovoltaic cells

    SciTech Connect

    Bird, G.R.

    1996-09-01

    We present an urgent view of the field of organic solid state photovoltaic cells. This is a proper time to select the most promising materials from the Electrophotographic Industry, materials long tried in terms of stability, high quantum yield of charge carriers, but set apart by unusually high quantum yields at low applied fields. Our experience with the candidate dyes has covered new tests for identifiable impurities and removal of these impurities by verifiable methods. A new method of purification, reactive train sublimation, has been developed for DNT, one of the simplest of the outstanding perylene dyes, and the method seems applicable to some of the other promising perylene derivatives. It removes the offending impurity by converting it into the desired pure product. The role of water of hydration in the {open_quotes}wine cellar effect{close_quotes}, the slowly rising performance of newly made phthalocyanine containing cells has been analyzed. Under the concept of feasibility testing before a final refinement for practicality of materials and production methods, the hydration can be controlled for high level testing. At the same time, efforts go forward to eliminate the need. At least one of the best phthalocyanine components, X-H{sub 2}Pc, does not require water for peak performance. Finally, we have attacked BBIP (bis-benzimidazole perylene) one of the best and most enigmatic of the near infrared sensors. It has long been known and used as a mixture of synthetic isomers, and we hypothesize that either of these would be better than the uncontrolled mixture. A partial success in the form of isolating highly enriched crystals for an X-ray structure of the trans-molecule, is first presented here. A simple optical analysis method has been developed to follow enrichment procedures. For all of its difficult history, this material seems closest to a state of readiness for critical feasibility testing.

  2. Yield Advances in Peanut

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Average yields of peanut in the U.S. set an all time record of 4,695 kg ha-1 in 2012. This far exceeded the previous record yield of 3,837 kg ha-1 in 2008. Favorable weather conditions undoubtedly contributed to the record yields in 2012; however, these record yields would not have been achievable...

  3. A frequency-dependent log-quadratic Pn spreading model in the Northeast China and Korean peninsula

    NASA Astrophysics Data System (ADS)

    Hao, J.; Zhao, L.; Xie, X. B.; Yao, Z.

    2015-12-01

    In 9 October 2006, 25 May 2009, and 12 February 2013, North Korea conducted three successive nuclear tests near the China-Korea border. Based on 297 broadband stations distributed in East China, South Korea, and Japan, the digital seismograms from these nuclear tests are collected to investigate the geometric spreading and attenuation of seismic Pn waves in Northeast China and Korean Peninsula. A highly accurate broadband Pn-wave data set generated by North Korean nuclear tests is used to constrain parameters of a frequency-dependent log-quadratic geometric spreading function and a power-law Pn Q model. The geometric spreading function and apparent Pn wave Q is obtained for the studied area between 2.0 and 10.0 Hz. By taking the two-station amplitude ratios of the Pn spectra, followed by correcting it for the known spreading function, we can strip the effects of source and crust legs from the apparent Pn Q, and retrieve the P-wave attenuation information along the pure upper mantle path. We then use a tomographic approach to obtain the upper mantle P-wave attenuation in Northeast China and Korean Peninsula. The Pn wave spectra observed in China are compared with those recorded in Japan, and the result reveals that the high-frequency Pn signal across the oceanic path attenuated faster than those through the continental path. This work was supported by the National Natural Science Foundation of China (grants 41174048 and 41374065).

  4. Sensitive thermal microsensor with pn junction for heat measurement of a single cell

    NASA Astrophysics Data System (ADS)

    Yamada, Taito; Inomata, Naoki; Ono, Takahito

    2016-02-01

    A sensitive thermal microsensor based on a pn junction diode for heat measurements of biological single cells is developed and evaluated. Using a fabricated device, we demonstrated the heat measurement of a single brown fat cell. The principle of the sensor relies on the temperature dependence of the pn junction diode resistance. This method has a capability of the highly thermal sensitivity by downsizing and the advantage of a simple experimental setup using electrical circuits without any special equipment. To achieve highly sensitive heat measurement of single cells, downsizing of the sensor is necessary to reduce the heat capacity of the sensor itself. The sensor with the pn junction diode can be downsized by microfabrication. A bridge beam structure with the pn junction diode as a thermal sensor is placed in vacuum using a microfludic chip to decrease the heat loss to the surroundings. A temperature coefficient of resistance of 1.4%/K was achieved. The temperature and thermal resolutions of the fabricated device are 1.1 mK and 73.6 nW, respectively. The heat measurements of norepinephrine stimulated and nonstimulated single brown fat cells were demonstrated, and different behaviors in heat generation were observed.

  5. Photocurrent spectroscopy of exciton and free particle optical transitions in suspended carbon nanotube pn-junctions

    SciTech Connect

    Chang, Shun-Wen; Theiss, Jesse; Hazra, Jubin; Aykol, Mehmet; Kapadia, Rehan; Cronin, Stephen B.

    2015-08-03

    We study photocurrent generation in individual, suspended carbon nanotube pn-junction diodes formed by electrostatic doping using two gate electrodes. Photocurrent spectra collected under various electrostatic doping concentrations reveal distinctive behaviors for free particle optical transitions and excitonic transitions. In particular, the photocurrent generated by excitonic transitions exhibits a strong gate doping dependence, while that of the free particle transitions is gate independent. Here, the built-in potential of the pn-junction is required to separate the strongly bound electron-hole pairs of the excitons, while free particle excitations do not require this field-assisted charge separation. We observe a sharp, well defined E{sub 11} free particle interband transition in contrast with previous photocurrent studies. Several steps are taken to ensure that the active charge separating region of these pn-junctions is suspended off the substrate in a suspended region that is substantially longer than the exciton diffusion length and, therefore, the photocurrent does not originate from a Schottky junction. We present a detailed model of the built-in fields in these pn-junctions, which, together with phonon-assistant exciton dissociation, predicts photocurrents on the same order of those observed experimentally.

  6. Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation

    PubMed Central

    Yu, Xuechao; Shen, Youde; Liu, Tao; Wu, Tao (Tom); Jie Wang, Qi

    2015-01-01

    Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices. PMID:26152225

  7. Diffused P+-N solar cells in bulk GaAs

    NASA Technical Reports Server (NTRS)

    Borrego, J. M.; Ghandhi, S. K.

    1982-01-01

    Recently melt grown GaAs, made by liquid encapsulation techniques, has become available. This material is of sufficiently good quality to allow the fabrication of solar cells by direct diffusion. Results obtained with p(+)/n junction solar cells made by zinc diffusion are described. The quality of bulk GaAs for this application is evaluated.

  8. Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating.

    PubMed

    Buscema, Michele; Groenendijk, Dirk J; Steele, Gary A; van der Zant, Herre S J; Castellanos-Gomez, Andres

    2014-08-28

    In conventional photovoltaic solar cells, photogenerated carriers are extracted by the built-in electric field of a semiconductor PN junction, defined by ionic dopants. In atomically thin semiconductors, the doping level can be controlled by the field effect, enabling the implementation of electrically tunable PN junctions. However, most two-dimensional (2D) semiconductors do not show ambipolar transport, which is necessary to realize PN junctions. Few-layer black phosphorus (b-P) is a recently isolated 2D semiconductor with direct bandgap, high mobility, large current on/off ratios and ambipolar operation. Here we fabricate few-layer b-P field-effect transistors with split gates and hexagonal boron nitride dielectric. We demonstrate electrostatic control of the local charge carrier type and density in the device. Illuminating a gate-defined PN junction, we observe zero-bias photocurrents and significant open-circuit voltages due to the photovoltaic effect. The small bandgap of the material allows power generation for illumination wavelengths up to 940 nm, attractive for energy harvesting in the near-infrared.

  9. Enhanced spin Seebeck effect in a germanene p-n junction

    SciTech Connect

    Zheng, Jun; Chi, Feng; Guo, Yong

    2014-12-28

    Spin Seebeck effect in a germanene p-n junction is studied by using the nonequilibrium Green's function method combined with the tight-binding Hamiltonian. We find that the thermal bias ΔT can generate spin thermopower when a local exchange field is applied on one edge of the germanene nano-ribbon. The magnitude of the spin thermopower can be modulated by the potential drop across the two terminals of the p-n junction. When the value of the potential drop is smaller than the spin-orbit interaction strength, the spin thermopower is enhanced by two orders of magnitude larger as compared to the case of zero p-n voltage. Optimal temperature corresponding to maximum spin thermopower is insensitive to the potential drop. In the p-n region, maximum spin thermopower can be obtained at relatively higher temperatures. When the value of the potential drop is larger than that of the spin-orbit interaction, however, the spin Seebeck effect decays rapidly with increasing potential drop or temperature. By optimizing the structure parameters, the magnitude of the spin thermopower can be remarkably enhanced due to the coexistence of the exchange field and the potential drop.

  10. Bismuthoxyiodide Nanoflakes/Titania Nanotubes Arrayed p-n Heterojunction and Its Application for Photoelectrochemical Bioanalysis

    PubMed Central

    Zhao, Wei-Wei; Liu, Zhao; Shan, Shu; Zhang, Wen-Wen; Wang, Jing; Ma, Zheng-Yuan; Xu, Jing-Juan; Chen, Hong-Yuan

    2014-01-01

    We have developed sensitive detection of cancer biomarker vascular endothelial growth factor (VEGF) using the p-n heterojunction comprised of p-type BiOI nanoflakes (NFs) array and n-type TiO2 nanotubes (NTs) array. Due to the unique arrayed structure and the synergy effect of photoelectrochemistry in the formed p-n junction, the synthesized configuration has superior excitation efficiency and thus excellent photoresponsibility. Then, the fabricated p-n heterojunction was integrated with an exquisite bioassay protocol for addressing VEGF using a sandwich immunoassay with glucosedehydrogenase (GDH) as the enzyme tags. Due to the excellent performance of BiOI NFs array/TiO2 NTs array and the ingenious signaling mechanism, the proposed system could achieve the sensitive and specific VEGF detection. This work not only presents a simple BiOI NFs array/TiO2 NTs array p-n heterojunction for general applications in the broad photochemistry areas, but also opens a different horizon for current development of advanced PEC biomolecular detection. PMID:24651880

  11. High-speed infra-red modulator with multilayered pn-junctions

    NASA Astrophysics Data System (ADS)

    Yamada, S.; Urisu, T.; Mizushima, Y.

    1983-10-01

    A high-speed infra-red modulator having a GaAs multilayered pn-junction and resonator structure is proposed. Device operation is based on infra-red interaction with injected carriers at each junction. The performance calculation reveals an amplitude of 50 percent, and an approximately pi phase modulation depth with expected bandwidth in the gigahertz order.

  12. Fast single-element PN acquisition for the TDRSS MA system

    NASA Astrophysics Data System (ADS)

    Davisson, Lee D.; Flikkema, Paul G.

    1988-11-01

    A description is given and a performance analysis presented of a novel pseudonoise (PN) code acquisition approach for the tracking and data relay satellite system (TDRSS) multiaccess (MA) return subsystem. The MA subsystem uses a phased array onboard the TDRS with 30 elements whose received signals are each independently retransmitted to the ground for beam forming. In the current operational system, acquisition is performed by using a serial search of the possible PN epochs on the beam-formed 30-element signal. The approach performs acquisition on a single (arbitrary) element signal using a parallel (i.e., simultaneous) search of all possible PN epochs. Since only one element signal is used, no beam forming is required prior to PN acquisition. The approach is based on sampling and digital processing of the received signal and incorporates techniques which counteract the effects of Doppler and asynchronous data symboling. The probability of correct acquisition as a function of acquisition time, signal-to-noise ratio, data rate, and user satellite Doppler is analyzed.

  13. Estimating p-n Diode Bulk Parameters, Bandgap Energy and Absolute Zero by a Simple Experiment

    ERIC Educational Resources Information Center

    Ocaya, R. O.; Dejene, F. B.

    2007-01-01

    This paper presents a straightforward but interesting experimental method for p-n diode characterization. The method differs substantially from many approaches in diode characterization by offering much tighter control over the temperature and current variables. The method allows the determination of important diode constants such as temperature…

  14. Electrocatalytic Reduction of Carbon Dioxide with a Well-Defined PN 3 -Ru Pincer Complex

    DOE PAGES

    Min, Shixiong; Rasul, Shahid; Li, Huaifeng; ...

    2015-11-13

    We established a well-defined PN3-Ru pincer complex (5) bearing a redox-active bipyridine ligand with an aminophosphine arm as an effective and stable molecular electrocatalyst for CO2 reduction to CO and HCOOH with negligible formation of H2 in a H2O/MeCN mixture.

  15. Bismuthoxyiodide Nanoflakes/Titania Nanotubes Arrayed p-n Heterojunction and Its Application for Photoelectrochemical Bioanalysis

    NASA Astrophysics Data System (ADS)

    Zhao, Wei-Wei; Liu, Zhao; Shan, Shu; Zhang, Wen-Wen; Wang, Jing; Ma, Zheng-Yuan; Xu, Jing-Juan; Chen, Hong-Yuan

    2014-03-01

    We have developed sensitive detection of cancer biomarker vascular endothelial growth factor (VEGF) using the p-n heterojunction comprised of p-type BiOI nanoflakes (NFs) array and n-type TiO2 nanotubes (NTs) array. Due to the unique arrayed structure and the synergy effect of photoelectrochemistry in the formed p-n junction, the synthesized configuration has superior excitation efficiency and thus excellent photoresponsibility. Then, the fabricated p-n heterojunction was integrated with an exquisite bioassay protocol for addressing VEGF using a sandwich immunoassay with glucosedehydrogenase (GDH) as the enzyme tags. Due to the excellent performance of BiOI NFs array/TiO2 NTs array and the ingenious signaling mechanism, the proposed system could achieve the sensitive and specific VEGF detection. This work not only presents a simple BiOI NFs array/TiO2 NTs array p-n heterojunction for general applications in the broad photochemistry areas, but also opens a different horizon for current development of advanced PEC biomolecular detection.

  16. Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode.

    PubMed

    Jariwala, Deep; Sangwan, Vinod K; Wu, Chung-Chiang; Prabhumirashi, Pradyumna L; Geier, Michael L; Marks, Tobin J; Lauhon, Lincoln J; Hersam, Mark C

    2013-11-05

    The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10(4). This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics.

  17. Studies of silicon p-n junction solar cells. [open circuit photovoltage

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.

    1976-01-01

    Single crystal silicon p-n junction solar cells made with low resistivity substrates show poorer solar energy conversion efficiency than traditional theory predicts. The physical mechanisms responsible for this discrepancy are identified and characterized. The open circuit voltage in shallow junction cells of about 0.1 ohm/cm substrate resistivity is investigated under AMO (one sun) conditions.

  18. Nonlinear screening and ballistic transport in a graphene p-n junction.

    PubMed

    Zhang, L M; Fogler, M M

    2008-03-21

    We study the charge density distribution, the electric field profile, and the resistance of an electrostatically created lateral p-n junction in graphene. We show that the electric field at the interface of the electron and hole regions is strongly enhanced due to limited screening capacity of Dirac quasiparticles. Accordingly, the junction resistance is lower than estimated in previous literature.

  19. Modeling potential hydrochemical responses to climate change and increasing CO2 at the Hubbard Brook Experimental Forest using a dynamic biogeochemical model (PnET-BGC)

    NASA Astrophysics Data System (ADS)

    Pourmokhtarian, Afshin; Driscoll, Charles T.; Campbell, John L.; Hayhoe, Katharine

    2012-07-01

    Dynamic hydrochemical models are useful tools for understanding and predicting the interactive effects of climate change, atmospheric CO2, and atmospheric deposition on the hydrology and water quality of forested watersheds. We used the biogeochemical model, PnET-BGC, to evaluate the effects of potential future changes in temperature, precipitation, solar radiation, and atmospheric CO2on pools, concentrations, and fluxes of major elements at the Hubbard Brook Experimental Forest in New Hampshire, United States. Future climate projections used to run PnET-BGC were generated specifically for the Hubbard Brook Experimental Forest with a statistical technique that downscales climate output (e.g., air temperature, precipitation, solar radiation) from atmosphere-ocean general circulation models (AOGCMs) to a finer temporal and spatial resolution. These climate projections indicate that over the twenty-first century, average air temperature will increase at the site by 1.7°C to 6.5°C with simultaneous increases in annual average precipitation ranging from 4 to 32 cm above the long-term mean (1970-2000). PnET-BGC simulations under future climate change show a shift in hydrology characterized by later snowpack development, earlier spring discharge (snowmelt), greater evapotranspiration, and a slight increase in annual water yield (associated with CO2 effects on vegetation). Model results indicate that under elevated temperature, net soil nitrogen mineralization and nitrification markedly increase, resulting in acidification of soil and stream water, thereby altering the quality of water draining from forested watersheds. Invoking a CO2 fertilization effect on vegetation under climate change substantially mitigates watershed nitrogen loss, highlighting the need for a more thorough understanding of CO2 effects on forest vegetation.

  20. Electronic transport in graphene: p-n junctions, shot noise, and nanoribbons

    NASA Astrophysics Data System (ADS)

    Williams, James Ryan

    2009-12-01

    Novel, two-dimensional materials have allowed for the inception and elucidation of a plethora of physical phenomena. On such material, a hexagonal lattice of carbon atoms called graphene, is a unique, truly two-dimensional molecular conductor. This thesis describes six experiments that elucidate some interesting physical properties and technological applications of graphene, with an emphasis on graphene-based p-n junctions. A technique for the creation of high-quality p-n junctions of graphene is described. Transport measurements at zero magnetic field demonstrate local control of the carrier type and density bipolar graphene-based junctions. In the quantum Hall regime, new plateaus in the conductance are observed and explained in terms of mode mixing at the p-n interface. Shot noise in unipolar and bipolar graphene devices is measured. A density-independent Fano factor is observed, contrary to theoretical expectations. Further, an independence on device geometry is also observed. The role of disorder on the measured Fano factor is discussed, and comparison to recent theory for disordered graphene is made. The effect of a two-terminal geometry, where the device aspect ratio is different from unity, is measured experimentally and analyzed theoretically. A method for extracting layer number from the conductance extrema is proposed. A method for a conformal mapping of a device with asymmetric contacts to a rectangle is demonstrated. Finally, possible origins of discrepancies between theory and experiment are discussed. Transport along p-n junctions in graphene is reported. Enhanced transport along the junction is observed and attributed to states that exist at the p-n interface. A correspondence between the observed phenomena at low-field and in the quantum Hall regime is observed. An electric field perpendicular to the junction is found to reduce the enhanced conductance at the p-n junction. A corollary between the p-n interface states and "snake states" in an

  1. Pn-waves Travel-time Anomaly beneath Taiwan from Dense Seismic Array Observations and its Possible Tectonic Implications

    NASA Astrophysics Data System (ADS)

    Lin, Y. Y.; Huang, B. S.; Ma, K. F.; Hsieh, M. C.

    2015-12-01

    We investigated travel times of Pn waves, which are of great important for understanding the Moho structure in Taiwan region. Although several high quality tomographic studies had been carried out, observations of Pn waves are still the most comprehensive way to elucidate the Moho structure. Mapping the Moho structure of Taiwan had been a challenging due to the small spatial dimension of Taiwan island with two subduction systems. To decipher the tectonic structure and understanding of earthquake hazard, the island of Taiwan have been implemented by several high density seismic stations, including 71 short-period stations of Central Weather Bureau Seismic Network (CWBSN) and 42 broardband stations of Broadband Array in Taiwan for Seismology (BATS). High quality seismic records of these stations would be used to identify precise Pn-wave arrival times. After station-elevation correction, we measure the difference between the observed and theoretical Pn arrivals from the IASPI 91 model for each station. For correcting uncertainties of earthquake location and origin time, we estimate relative Pn anomaly, ΔtPn , between each station and a reference station. The pattern of ΔtPn reflects the depth anomaly of Moho beneath Taiwan. In general, Pn waves are commonly observed from shallow earthquake at epicentral distance larger than 120 km. We search the global catalog since 2005 and the criteria are M > 5.5, focal depth < 30 km and epicentral distance > 150 km. The 12 medium earthquakes from north Luzon are considered for analysis. We choose a station, TWKB, in the most southern point of Taiwan as the reference station due to that all events are from the south. The results indicate obvious different patterns of ΔtPn from different back-azimuths. The ΔtPn pattern of the events in the first group from the south south-east indicates that the Pn arrivals delay suddenly when the Pn waves pass through the Central Range, suggesting the Moho becomes deep rapidly. However, we

  2. [Relationships of wheat leaf stomatal traits with wheat yield and drought-resistance].

    PubMed

    Wang, Shu-Guang; Li, Zhong-Qing; Jia, Shou-Shan; Sun, Dai-Zhen; Shi, Yu-Gang; Fan, Hua; Liang, Zeng-Hao; Jing, Rui-Lian

    2013-06-01

    Taking the DH population of wheat cultivar Hanxuan10/Lumai14 as test object, and by the methods of correlation analysis and path analysis, this paper studied the relationships of the flag leaf stomatal density (SD), stomatal length and width (SL and SW), stomatal conductance (g(s)), photosynthetic rate (P(n)), and transpiration rate (T(r)) on the 10th and 20th day after anthesis with the yield and the index of drought-resistance under the conditions of drought stress and normal irrigation. Under the two conditions, most of the test leaf traits on the 10th day after anthesis had less correlation with the yield and the index of drought-resistance, whereas the leaf traits on the 20th day after anthesis had significant positive correlations with thousand kernel weight but less correlation with grain number per ear, grain yield per plant, and index of drought-resistance. Path analysis showed that g(s), P(n), and T(r) were the main factors affecting the grain yield per plant (YPP) and the index of drought resistance (IDR), and the effects were stronger both in direct and in indirect ways. The direct and indirect effects of SD, SL, and SW on the YPP and IDR were lesser. Under both drought stress and normal irrigation, and on the 10th and 20th day after anthesis, there were significant correlations between SD and SL, and between SL and SW, g(s), P(n), and Tr, but the correlations of SD and SL with g(s), P(n), and T(r) changed with water condition or growth stage. Therefore, it would be not always a good means to select the leaf stomatal density and size as the targets for breeding to improve the leaf stomatal conductance, photosynthetic rate, and transpiration rate, and further, to promote the yield.

  3. Gravitational-wave phasing for low-eccentricity inspiralling compact binaries to 3PN order

    NASA Astrophysics Data System (ADS)

    Moore, Blake; Favata, Marc; Arun, K. G.; Mishra, Chandra Kant

    2016-06-01

    Although gravitational radiation causes inspiralling compact binaries to circularize, a variety of astrophysical scenarios suggest that binaries might have small but non-negligible orbital eccentricities when they enter the low-frequency bands of ground- and space-based gravitational-wave detectors. If not accounted for, even a small orbital eccentricity can cause a potentially significant systematic error in the mass parameters of an inspiralling binary [M. Favata, Phys. Rev. Lett. 112, 101101 (2014)]. Gravitational-wave search templates typically rely on the quasicircular approximation, which provides relatively simple expressions for the gravitational-wave phase to 3.5 post-Newtonian (PN) order. Damour, Gopakumar, Iyer, and others have developed an elegant but complex quasi-Keplerian formalism for describing the post-Newtonian corrections to the orbits and waveforms of inspiralling binaries with any eccentricity. Here, we specialize the quasi-Keplerian formalism to binaries with low eccentricity. In this limit, the nonperiodic contribution to the gravitational-wave phasing can be expressed explicitly as simple functions of frequency or time, with little additional complexity beyond the well-known formulas for circular binaries. These eccentric phase corrections are computed to 3PN order and to leading order in the eccentricity for the standard PN approximants. For a variety of systems, these eccentricity corrections cause significant corrections to the number of gravitational-wave cycles that sweep through a detector's frequency band. This is evaluated using several measures, including a modification of the useful cycles. By comparing to numerical solutions valid for any eccentricity, we find that our analytic solutions are valid up to e0≲0.1 for comparable-mass systems, where e0 is the eccentricity when the source enters the detector band. We also evaluate the role of periodic terms that enter the phasing and discuss how they can be incorporated into some of

  4. Electrical/thermal transport and electronic structure of the binary cobalt pnictides CoPn{sub 2} (Pn = As and Sb)

    SciTech Connect

    Goto, Yosuke Miyao, Syuhei; Kamihara, Yoichi; Matoba, Masanori

    2015-06-15

    We demonstrate the electrical and thermal transport properties of polycrystalline CoPn{sub 2} (Pn = As and Sb) between 300 and 900 K. CoAs{sub 2} shows semiconducting electrical transport up to 900 K, while CoSb{sub 2} exhibits degenerate conduction. Sign inversion of the Seebeck coefficient is observed at ∼310 and ∼400 K for CoAs{sub 2} and CoSb{sub 2}, respectively. Thermal conductivity at 300 K is 11.7 Wm{sup −1}K{sup −1} for CoAs{sub 2} and 9.4 Wm{sup −1}K{sup −1} for CoSb{sub 2}. The thermoelectric power factor of CoAs{sub 2} is ∼10 μWcm{sup −1}K{sup −2}, although the dimensionless figure of merit is limited to ∼0.1 due to relatively high thermal conductivity. Using electronic structure calculations, the band gap value is calculated to be 0.55 eV for CoAs{sub 2} and 0.26 eV for CoSb{sub 2}.

  5. Color of postponed magnetic noise in K0.4[Cr (CN) 6 ] [Mn (R /S )-pn ] (R /S ) -pn H0.6 molecular ferrimagnet

    NASA Astrophysics Data System (ADS)

    Morgunov, R. B.; Talantsev, A. D.

    2016-10-01

    Exotic conditions for the existence and evolution of nonlinear spin ensembles (domain walls, spin solitons, skyrmions) in molecular-based magnets are incarnated in the macroscopic response of magnetization corresponding to collective stochastic behavior. The molecular ferrimagnet K0.4[Cr (CN) 6 ] [Mn (R /S )-pn ] (R /S ) -pn H0.6 manifests three types of magnetic relaxation: (a) continuous decay of magnetic moment, (b) stepwise relaxation by stochastic magnetization jumps, and (c) a single jump of magnetization in threshold magnetic field. Continuous relaxation at 20-50 K is provided by domain wall movement described in the frames of a strong pinning model, while a low-temperature continuous component of relaxation does not follow this model. Stepwise stochastic relaxation was observed below 8 K in both a sweeping reverse magnetic field and a stationary reverse magnetic field. Statistical treatment of the postponed magnetization jumps revealed a multimodal amplitude distribution of stochastic magnetization jumps corresponding to magnetic moment transitions between few clear distinguishable levels. Spectral density of magnetization jumps in a stationary magnetic field corresponds to white noise, while spectral density in a sweeping magnetic field manifests pink noise ˜1 /f provided by self-organized criticality. Postponed emission of magnetic noise in the 10-6-5 ×10-1Hz frequency range was observed in stationary conditions in contrast to Barkhausen noise.

  6. Study on the photocatalytic activity of p-n junction photocatalyst Cu2O/TiO2.

    PubMed

    Shifu, Chen; Sujuan, Zhang; Wei, Liu; Wei, Zhao

    2009-07-01

    p-n junction photocatalyst Cu2O/TiO2 was prepared by ball milling through doping Cu2O into TiO2 and using H2O solution as disperser. The p-n junction photocatalyst Cu2O/TiO2 was characterized by UV-Vis diffuse reflection spectrum, Scanning electron microscopy (SEM), X-ray powder diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of the photocatalyst was evaluated by photocatalytic reduction of Cr2O7(2-) and photocatalytic oxidation of methyl orange (MO), respectively. The results showed that, for the photocatalytic reduction of Cr2O7(2-), the optimum percentage of doped-Cu2O is 1.0% (weight percentage). The photoreduction activity of the p-n junction Cu2O/TiO2 is much higher than that of TiO2 on the photocatalytic reduction of Cr2O7(2-). However, the photooxidation activity of the p-n junction photocatalyst Cu2O/TiO2 is much lower than that of TiO2 on the photocatalytic oxidation of methyl orange (MO). Namely, the p-n junction photocatalyst Cu2O/TiO2 has higher photocatalytic reduction activity, but lower photocatalytic oxidation activity. Cu2O and TiO2 were coupled highly, forming the p-n junction Cu2O/TiO2 photocatalyst. The photocatalytic activity of the p-n junction Cu2O/TiO2 was discussed by the p-n junction principle. Effect of ball milling time on the photocatalytic activity of p-n junction photocatalyst Cu2O/TiO2 was also investigated.

  7. A noncoherent delay-lock PN tracking loop - Impact of RFI and nonideal arm-filter characteristics

    NASA Astrophysics Data System (ADS)

    Comparetto, G.

    1987-11-01

    The effects of radio frequency interference and gain/phase imbalance on the performance of a noncoherent delay-lock PN tracking loop were investigated, and performance data generated by simulation and analysis are presented. The receiver modelled is the wide dynamics demodulator which is used to support tracking and data relay satellite system S-band single-access return link communications. Self-noise terms and nonideal arm-filter characteristics are found to be significant factors in determining PN tracking performance where PN code timing synchronization is a major concern.

  8. Photoelectrochemical corrosion of GaN-based p-n structures

    NASA Astrophysics Data System (ADS)

    Fomichev, A. D.; Kurin, S. Yu; Ermakovi, I. A.; Puzyk, M. V.; Usikov, A. S.; Helava, H.; Nikiforov, A.; Papchenko, B. P.; Makarov, Yu N.; Chernyakov, A. E.

    2016-08-01

    Direct water photoelectrolysis using III-N materials is a promising way for hydrogen production. GaN/AlGaN based p-n structures were used in a photoelectrochemical process to investigate the material etching (corrosion) in an electrolyte. At the beginning, the corrosion performs through the top p-type layers via channels associated with threading defects and can penetrate deep into the structure. Then, the corrosion process occurs in lateral direction in n- type layers forming voids and cavities in the structure. The lateral etching is due to net positive charges at the AlGaN/GaN interfaces arising because of spontaneous and piezoelectric polarization in the structure and positively charged ionized donors in the space charge region of the p-n junction.

  9. Edge mixing dynamics in graphene p-n junctions in the quantum Hall regime

    NASA Astrophysics Data System (ADS)

    Matsuo, Sadashige; Takeshita, Shunpei; Tanaka, Takahiro; Nakaharai, Shu; Tsukagoshi, Kazuhito; Moriyama, Takahiro; Ono, Teruo; Kobayashi, Kensuke

    2015-09-01

    Massless Dirac electron systems such as graphene exhibit a distinct half-integer quantum Hall effect, and in the bipolar transport regime co-propagating edge states along the p-n junction are realized. Additionally, these edge states are uniformly mixed at the junction, which makes it a unique structure to partition electrons in these edge states. Although many experimental works have addressed this issue, the microscopic dynamics of electron partition in this peculiar structure remains unclear. Here we performed shot-noise measurements on the junction in the quantum Hall regime as well as at zero magnetic field. We found that, in sharp contrast with the zero-field case, the shot noise in the quantum Hall regime is finite in the bipolar regime, but is strongly suppressed in the unipolar regime. Our observation is consistent with the theoretical prediction and gives microscopic evidence that the edge states are uniquely mixed along the p-n junction.

  10. Uppermost mantle structure beneath eastern China and its surroundings from Pn and Sn tomography

    NASA Astrophysics Data System (ADS)

    Sun, Weijia; Kennett, B. L. N.

    2016-04-01

    The Pn and Sn residuals from regional events provide strong constraints on the structure and lithological characteristics of the uppermost mantle beneath eastern China and its surroundings. With the dense Chinese Digital Seismic Network in eastern China, separate Pn and Sn tomographic inversions have been exploited to obtain P and S velocities at a resolution of 2° × 2° or better. The patterns of P velocities are quite consistent with the S velocities at depth of 50 and 60 km, but the amplitude of P wave speed anomalies are a little larger than those of S wave speed. The low P wave speed, high S wave speed, and low Vp/Vs ratio beneath the northern part of Ordos Basin are related to upwelling hot material. Abrupt changes in material properties are indicated from the rapid variations in the Vp/Vs ratio.

  11. Enhanced Photoelectrocatalytic Activity of BiOI Nanoplate-Zinc Oxide Nanorod p-n Heterojunction.

    PubMed

    Kuang, Pan-Yong; Ran, Jing-Run; Liu, Zhao-Qing; Wang, Hong-Juan; Li, Nan; Su, Yu-Zhi; Jin, Yong-Gang; Qiao, Shi-Zhang

    2015-10-19

    The development of highly efficient and robust photocatalysts has attracted great attention for solving the global energy crisis and environmental problems. Herein, we describe the synthesis of a p-n heterostructured photocatalyst, consisting of ZnO nanorod arrays (NRAs) decorated with BiOI nanoplates (NPs), by a facile solvothermal method. The product thus obtained shows high photoelectrochemical water splitting performance and enhanced photoelectrocatalytic activity for pollutant degradation under visible light irradiation. The p-type BiOI NPs, with a narrow band gap, not only act as a sensitizer to absorb visible light and promote electron transfer to the n-type ZnO NRAs, but also increase the contact area with organic pollutants. Meanwhile, ZnO NRAs provide a fast electron-transfer channel, thus resulting in efficient separation of photoinduced electron-hole pairs. Such a p-n heterojunction nanocomposite could serve as a novel and promising catalyst in energy and environmental applications.

  12. Hidden quantum mirage by negative refraction in semiconductor P-N junctions

    NASA Astrophysics Data System (ADS)

    Zhang, Shu-Hui; Zhu, Jia-Ji; Yang, Wen; Lin, Hai-Qing; Chang, Kai

    2016-08-01

    We predict a robust quantum interference phenomenon in a semiconductor P-N junction: with a local pump on one side of the junction, the response of a local probe on the other side behaves as if the disturbance emanates not from the pump but instead from its mirror image about the junction. This phenomenon follows from the matching of Fermi surfaces of the constituent materials, thus it is robust against the details of the junction (e.g., width, potential profile, and even disorder), in contrast to the widely studied anomalous focusing caused by negative refraction. The recently fabricated P-N junctions in 2D semiconductors provide ideal platforms to explore this phenomenon and its applications to dramatically enhance charge and spin transport as well as carrier-mediated long-range correlation.

  13. Thin-layer black phosphorous/GaAs heterojunction p-n diodes

    SciTech Connect

    Gehring, Pascal; Urcuyo, Roberto; Duong, Dinh Loc; Burghard, Marko; Kern, Klaus

    2015-06-08

    Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorous emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction diodes wherein thin black phosphorous layers are interfaced with an underlying, highly n-doped GaAs substrate. The p-n heterojunctions exhibit close-to-ideal diode behavior at low bias, while under illumination they display a photoresponse that is evenly distributed over the entire junction area, with an external quantum efficiency of up to 10% at zero bias. Moreover, the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorous sheet with a thickness on the order of 10 nm. Further analysis reveals that the device performance is limited by the structural quality of the black phosphorous surface.

  14. Etude cristallochimique de LiPN 2: Une structure derivée de la cristobalite

    NASA Astrophysics Data System (ADS)

    Marchand, Roger; L'Haridon, Paul; Laurent, Yves

    1982-07-01

    LiPN 2 has been prepared by reaction between Li 3N and P 3N 5 nitrides. The unit cell is tetragonal with a = 4.567(1) and c = 7.140(4) Å. The space group is I overline42d . The structure is related to the β cristobalite type and is isostructural with CaGeN 2. It is built up from a PN 4 tetrahedra framework in the holes of which the lithium atoms are localized. The values of the rotation angle ф of tetrahedra, {c}/{a} ratio and θ (NPN) angle have been discussed in relation to the parameter x of the nitrogen atoms.

  15. Edge-channel interferometer at the graphene quantum Hall pn junction

    SciTech Connect

    Morikawa, Sei; Moriya, Rai; Masubuchi, Satoru Machida, Tomoki; Watanabe, Kenji; Taniguchi, Takashi

    2015-05-04

    We demonstrate a quantum Hall edge-channel interferometer in a high-quality graphene pn junction under a high magnetic field. The co-propagating p and n quantum Hall edge channels traveling along the pn interface functions as a built-in Aharonov-Bohm-type interferometer, the interferences in which are sensitive to both the external magnetic field and the carrier concentration. The trajectories of peak and dip in the observed resistance oscillation are well reproduced by our numerical calculation that assumes magnetic flux quantization in the area enclosed by the co-propagating edge channels. Coherent nature of the co-propagating edge channels is confirmed by the checkerboard-like pattern in the dc-bias and magnetic-field dependences of the resistance oscillations.

  16. φ-meson production in pN collisions close to threshold

    NASA Astrophysics Data System (ADS)

    Maeda, Y.; Hartmann, M.; Keshelashvili, I.; Büscher, M.; Koch, R.; Mikirtytchiants, S.; Ströher, H.

    2006-07-01

    At the ANKE facility of COSY Jülich, the reactions pp→ppφ and pn→dφ have been investigated. Data for the total cross section in pp entrance channel have been obtained at excess energies of 19 MeV, 35 MeV and 76 MeV. In case of the pn entrance channel the energy dependence of the cross section up to 80 MeV has been extracted by exploiting the intrinsic momentum of the target neutron using a deuterium target. The new φ data combined with the existing data on ω-meson production provides the φ/ω production ratio in both, the pp- and pn-channels. The preliminary ratios of both channels are found to be similar and about seven times larger than the ratio based on Okubo-Zweig-Iizuka (OZI) rule.

  17. φ-meson production in pN collisions close to threshold

    NASA Astrophysics Data System (ADS)

    Maeda, Y.

    2007-06-01

    At the ANKE facility of COSY Jülich, the reactions pp→ppφ and pn→dφ have been investigated. Data for the total cross section in the pp entrance channel have been obtained at excess energies of 19 MeV, 35 MeV and 76 MeV. In case of the pn entrance channel the energy dependence of the cross section up to 80 MeV has been extracted by exploiting the intrinsic momentum of the target neutron using a deuterium target. The new φ data combined with the existing data on ω-meson production provides the φ/ω production ratio in both, the pp- and pn-channels. The ratios of both channels are found to be similar and about eight times larger than the ratio based on Okubo-Zweig-Iizuka (OZI) rule.

  18. A modified PN code tracking loop - Its performance analysis and comparative evaluation

    NASA Astrophysics Data System (ADS)

    Yost, R. A.; Boyd, R. W.

    1982-05-01

    A modified PN code tracking loop (MCTL) has been reported by Yost and Boyd (1980). The MCTL makes it possible to reduce the hardware complexity of a noncoherent delay lock loop in multiple data rate applications. The MCTL utilizes the on-time or data channel as the reference. This concept eliminates the need for the traditional loop's sum channel (early signal plus late signal) and, hence, the hardware associated with that channel. This saving may be substantial if the channel were to be optimized for a number of different data rates. With the elimination of an entire IF channel, the MCTL complexity is nearly equivalent to the dithering loop for PN code tracking considered by Hartmann (1974). However, the MCTL does not suffer the loss in tracking performance (with respect to the traditional loop) that the dithering loop experiences.

  19. A Segmented Neutron Detector with a High Position Resolution for the (p,pn) Reactions

    NASA Astrophysics Data System (ADS)

    Kubota, Yuki; Sasano, Masaki; Uesaka, Tomohiro; Dozono, Masanori; Itoh, Masatoshi; Kawase, Shoichiro; Kobayashi, Motoki; Lee, CheongSoo; Matsubara, Hiroaki; Miki, Kenjiro; Miya, Hiroyuki; Ota, Shinsuke; Sekiguchi, Kimiko; Shima, Tatsushi; Taguchi, Takahiro; Tamii, Atsushi; Tang, Tsz Leung; Tokieda, Hiroshi; Wakasa, Tomotsugu; Wakui, Takashi; Yasuda, Jumpei; Zenihiro, Juzo

    We are developing a neutron detector with a high position resolution to study the single particle properties of nuclei by the knockout (p,pn) reaction at intermediate energies. We constructed a prototype detector consisting of plastic scintillating fibers and multi-anode photomultiplier tubes (PMTs). Test experiments using 200- and 70-MeV proton and 199-, 188-, 68-, and 50-MeV neutron were performed for characterizing its performance. Preliminary results show that a position resolution of about 3 mm at full-width at half-maximum (FWHM) is realized as designed. The resulting separation-energy resolution to be obtained for (p,pn) measurement would be 1 MeV in FWHM, when the detector is used at a distance of 2 m from the target for measuring the neutron momentum.

  20. Total number of planetary nebulae in different galaxies and the PN distance scale.

    NASA Astrophysics Data System (ADS)

    Peimbert, M.

    1990-12-01

    RESUMEN A partir de una muestra de quince galaxias se encuentra que la tasa de natalidad de nebulosas planetarias por unidad de luminosidad, , disminuye al aumentar la luminosidad y al aumentar (B - V)0. Se discuten posibles explicaciones para estos resultados. Se estima el valor de para la Galaxia y a partir de el se encuentra que el numero total de nebulosas planetarias en nuestra galaxia con R < 0.64 pc- es de 7200 j 1800. El valor galactico de implica que la mayorfa de las estrellas de masa intermedia pasa por la etapa de nebulosa planetaria. El valor galactico de , la tasa de mortalidad estelar por unidad de luminosidad y la tasa de natalidad de enanas blancas favorecen escalas de distancias largas para nebulosas planetarias, como la de Cudworth (1974) y la de Mallik y Peimbert (1988). ABSTRACT From a sample of fifteen galaxies it is found that the birth rate of PN per unit luminosity, , decreases with increasing luminosity and with increasing (B - V)0 possible reasons for these relationships are discussed. The value for the Galaxy is estimated and, from it, a total number of PN of 7200 # 1800 wid R < 0.64 pc is obtained. The galactic value implies that most of the intermediate mass stars go through the PN stage. The galactic value, the stellar death rate per unit luminosity and the white dwarf birth rate are in favor of long distance scales to PN like those of Cudworth (1974) and Mallik and (1988). Key wonis: NEBULAE.PLANETARY - STARS-EVOLUTION - STARS-SThLIAR STA. S

  1. Photovoltaic characteristics of diffused P/+N bulk GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Borrego, J. M.; Keeney, R. P.; Bhat, I. B.; Bhat, K. N.; Sundaram, L. G.; Ghandhi, S. K.

    1982-01-01

    The photovoltaic characteristics of P(+)N junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are described in this paper.Spectral response measurements were analyzed in detail and compared to a computer simulation in order to determine important material parameters. It is projected that proper optimization of the cell parameters can increase the efficiency of the cells from 12.2 percent to close to 20 percent.

  2. The effect of tides on the population of PN from interacting binaries

    NASA Astrophysics Data System (ADS)

    Madappatt, Niyas; De Marco, Orsola; Villaver, Eva

    2016-11-01

    We have used the tidal equations of Zahn to determine the maximum orbital distance at which companions are brought into Roche lobe contact with their giant primary, when the primary expands during the giant phases. This is a key step when determining the rates of interaction between giants and their companions. Our stellar structure calculations are presented as maximum radii reached during the red and asymptotic giant branch (RGB and AGB, respectively) stages of evolution for masses between 0.8 and 4.0 M⊙ (Z = 0.001-0.04) and compared with other models to gauge the uncertainty on radii deriving from details of these calculations. We find overall tidal capture distances that are typically 1-4 times the maximum radial extent of the giant star, where companions are in the mass range from 1 MJ to a mass slightly smaller than the mass of the primary. We find that only companions at initial orbital separations between ˜320 and ˜630 R⊙ will be typically captured into a Roche lobe-filling interaction or a common envelope on the AGB. Comparing these limits with the period distribution for binaries that will make planetary nebula (PN), we deduce that in the standard scenario where all ˜1-8 M⊙ stars make a PN, at most 2.5 per cent of all PN should have a post-common envelope central star binary, at odds with the observational lower limit of 15-20 per cent. The observed overabundance of post-interaction central stars of PN cannot be easily explained considering the uncertainties. We examine a range of explanations for this discrepancy.

  3. Concatenated shift registers generating maximally spaced phase shifts of PN-sequences

    NASA Technical Reports Server (NTRS)

    Hurd, W. J.; Welch, L. R.

    1977-01-01

    A large class of linearly concatenated shift registers is shown to generate approximately maximally spaced phase shifts of pn-sequences, for use in pseudorandom number generation. A constructive method is presented for finding members of this class, for almost all degrees for which primitive trinomials exist. The sequences which result are not normally characterized by trinomial recursions, which is desirable since trinomial sequences can have some undesirable randomness properties.

  4. Nondestructive determination of the depth of planar p-n junctions by scanning electron microscopy

    NASA Technical Reports Server (NTRS)

    Chi, J.-Y.; Gatos, H. C.

    1977-01-01

    A method was developed for measuring nondestructively the depth of planar p-n junctions in simple devices as well as in integrated-circuit structures with the electron-beam induced current (EBIC) by scanning parallel to the junction in a scanning electron microscope (SEM). The results were found to be in good agreement with those obtained by the commonly used destructive method of lapping at an angle to the junction and staining to reveal the junction.

  5. Modeling pN2 through Geological Time: Implications for Planetary Climates and Atmospheric Biosignatures

    NASA Astrophysics Data System (ADS)

    Stüeken, E. E.; Kipp, M. A.; Koehler, M. C.; Schwieterman, E. W.; Johnson, B.; Buick, R.

    2016-12-01

    Nitrogen is a major nutrient for all life on Earth and could plausibly play a similar role in extraterrestrial biospheres. The major reservoir of nitrogen at Earth's surface is atmospheric N2, but recent studies have proposed that the size of this reservoir may have fluctuated significantly over the course of Earth's history with particularly low levels in the Neoarchean - presumably as a result of biological activity. We used a biogeochemical box model to test which conditions are necessary to cause large swings in atmospheric N2 pressure. Parameters for our model are constrained by observations of modern Earth and reconstructions of biomass burial and oxidative weathering in deep time. A 1-D climate model was used to model potential effects on atmospheric climate. In a second set of tests, we perturbed our box model to investigate which parameters have the greatest impact on the evolution of atmospheric pN2 and consider possible implications for nitrogen cycling on other planets. Our results suggest that (a) a high rate of biomass burial would have been needed in the Archean to draw down atmospheric pN2 to less than half modern levels, (b) the resulting effect on temperature could probably have been compensated by increasing solar luminosity and a mild increase in pCO2, and (c) atmospheric oxygenation could have initiated a stepwise pN2 rebound through oxidative weathering. In general, life appears to be necessary for significant atmospheric pN2 swings on Earth-like planets. Our results further support the idea that an exoplanetary atmosphere rich in both N2 and O2 is a signature of an oxygen-producing biosphere.

  6. VizieR Online Data Catalog: PN towards Galactic bulge. [OIII] fluxes (Kovacevic+, 2011)

    NASA Astrophysics Data System (ADS)

    Kovacevic, A. V.; Parker, Q. A.; Jacoby, G. H.; Sharp, R.; Miszalski, B.; Frew, D. J.

    2016-03-01

    We observed previously known and MASH PN in a 10°x10° region towards the Galactic bulge using the Cerro-Tololo Inter-American Observatory (CTIO) 4-m Blanco Telescope in Chile with the MOSAIC-II CCD Imager. A total of ~95h of photometric imaging was conducted, spread over two observing runs: six nights throughout 2008 June 9-14 and five nights from 2009 June 27 to July 2. (3 data files).

  7. Effect of unequal rise and fall times on the autocorrelation function of a PN sequence

    NASA Astrophysics Data System (ADS)

    Churchill, F. E.

    1990-10-01

    The rise and fall times of a pseudo-noise (PN) waveform are of concern in a short-range, CW radar such as a missile fuze radar. An inequality creates a spurious pair of sidelobes and a spiky ripple on the sidelobes of the autocorrelation function, which may cause false alarms in the radar. Analytical expressions are presented which relate the spurious responses of the autocorrelation function to the waveform rise and fall times.

  8. The ZnO p-n homojunctions modulated by ZnMgO barriers

    SciTech Connect

    Yang, Jing-Jing; Fang, Qing-Qing Wang, Dan-Dan; Du, Wen-Han

    2015-04-15

    In this paper, we fabricated the ultrathin ZnO p-n homojunctions, which modulated by ZnMgO asymmetrical double barriers (ADB). The ADB p-n homojunctions displays step-like curve in the absorption spectrums, this is the first time that quantum confinement effect has been observed in the absorption spectrums at room temperature (RT). The Hall-effect data confirm there is 2-dimensional electron gas in the interface of the ZnMgO ADB p-n junctions. The quantum confinement effect enhances the hall-mobility μ to 10{sup 3} cm{sup 2}V {sup −1}s{sup −1} based on the polarity of the films. There was no rectification property in the ZnO homojunctions with thickness of 250nm, however, when the ADB was added in the n-type layer of the homojunctions, it displays a typical Zener diode rectification property in the I-V curve.

  9. PN Sequence Preestimator Scheme for DS-SS Signal Acquisition Using Block Sequence Estimation

    NASA Astrophysics Data System (ADS)

    Hyun, Kwangmin; Yoon, Dongweon; Park, Sang Kyu

    2005-12-01

    An [InlineEquation not available: see fulltext.]-sequence (PN sequence) preestimator scheme for direct-sequence spread spectrum (DS-SS) signal acquisition by using block sequence estimation (BSE) is proposed and analyzed. The proposed scheme consists of an estimator and a verifier which work according to the PN sequence chip clock, and provides not only the enhanced chip estimates with a threshold decision logic and one-chip error correction among the first [InlineEquation not available: see fulltext.] received chips, but also the reliability check of the estimates with additional decision logic. The probabilities of the estimator and verifier operations are calculated. With these results, the detection, the false alarm, and the missing probabilities of the proposed scheme are derived. In addition, using a signal flow graph, the average acquisition time is calculated. The proposed scheme can be used as a preestimator and easily implemented by changing the internal signal path of a generally used digital matched filter (DMF) correlator or any other correlator that has a lot of sampling data memories for sampled PN sequence. The numerical results show rapid acquisition performance in a relatively good CNR.

  10. Gravitational waveforms in scalar-tensor gravity at 2PN relative order

    NASA Astrophysics Data System (ADS)

    Sennett, Noah; Marsat, Sylvain; Buonanno, Alessandra

    2016-10-01

    We compute the gravitational waveform from a binary system in scalar-tensor gravity at 2PN relative order. We restrict our calculation to nonspinning binary systems on quasicircular orbits and compute the spin-weighted spherical modes of the radiation. The evolution of the phase of the waveform is computed in the time and frequency domains. The emission of dipolar radiation is the lowest-order dissipative process in scalar-tensor gravity. However, stringent constraints set by current astrophysical observations indicate that this effect is subdominant to quadrupolar radiation for most prospective gravitational-wave sources. We compute the waveform for systems whose inspiral is driven by: (a) dipolar radiation (e.g., binary pulsars or spontaneously scalarized systems) and (b) quadrupolar radiation (e.g., typical sources for space-based and ground-based detectors). For case (a), we provide complete results at 2PN, whereas for case (b), we must introduce unknown terms in the 2PN flux; these unknown terms are suppressed by constraints on scalar-tensor gravity.

  11. Characterization of a pnCCD for applications with synchrotron radiation

    NASA Astrophysics Data System (ADS)

    Send, S.; Abboud, A.; Hartmann, R.; Huth, M.; Leitenberger, W.; Pashniak, N.; Schmidt, J.; Strüder, L.; Pietsch, U.

    2013-05-01

    In this work we study the response of a pnCCD by means of X-ray spectroscopy in the energy range between 6 keV and 20 keV and by Laue diffraction techniques. The analyses include measurements of characteristic detector parameters like energy resolution, count rate capability and effects of different gain settings. The limit of a single photon counting operation in white beam X-ray diffraction experiments is discussed with regard to the occurrence of pile-up events, for which the energy information about individual photons is lost. In case of monochromatic illumination the pnCCD can be used as a fast conventional CCD with a charge handling capacity (CHC) of about 300,000 electrons per pixel. If the CHC is exceeded, any surplus charge will spill to neighboring pixels perpendicular to the transfer direction due to electrostatic repulsion. The possibilities of increasing the number of storable electrons are investigated for different voltage settings by exposing a single pixel with X-rays generated by a microfocus X-ray source. The pixel binning mode is tested as an alternative approach that enables a pnCCD operation with significantly shorter readout times.

  12. Al00.3Ga0.7N PN diode with breakdown voltage >1600 V

    DOE PAGES

    Allerman, A. A.; Armstrong, A. M.; Fischer, A. J.; ...

    2016-07-21

    Demonstration of Al00.3Ga0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm2 is limited by the lateral conductivity of the n-type contact layer required by the front-surface contactmore » geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (Vbr2/Rspec,on) of 150 MW/cm2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.« less

  13. Giant magnetoresistance modulated by magnetic field in graphene p-n junction

    SciTech Connect

    Li, Yuan; Jalil, Mansoor B. A.; Zhou, Guanghui

    2014-11-10

    We investigate the tunneling transport across a graphene p-n junction under the influence of a perpendicular magnetic field (B field). We observe a sideway deflection of the transmission profile, which can be quantitatively explained by invoking the classical Lorentz force. By considering the trajectory of the Dirac fermions along their cyclotron orbits, we analytically derive the incident angles for transmission across the graphene junction under a B field, as well as the critical magnetic field for full suppression of tunneling across the junction. These analytical predictions are consistent with the numerical results obtained via the non-equilibrium Green's function method. A stronger B-field conductance modulation is obtained for a p-n as opposed to an n-n or p-p type graphene junction. The magnetic field also induces a forbidden region of almost zero transmission for electron energy close to the Dirac point, which can be utilized to achieve a giant magnetoresistance effect. Based on our analysis, we devise an optimal magneto-electrical transport modulation, which can potentially realize a giant magnetoresistance effect in graphene p-n junction systems.

  14. Growth and electrical rectification in axial in-situ doped p-n junction germanium nanowires

    SciTech Connect

    Picraux, Samuel T; Dayeh, Shadi; Zaslavsky, Alexander; Le, Son T

    2009-01-01

    In this work, we demonstrate the vapor-liquid-solid (VLS) growth and electrical properties of axial in-situ doped p-n junction Ge nanowires (NWs). In-situ doping of the NWs was accomplished by introducing dopant gases (diborane and phosphine) together with GeH{sub 4} in the growth process. By changing dopant sources during growth, a p-n junction can be realized along the axis of the NWs. Metal contacts to the wires were defined using e-beam lithography patterning, followed by 100 nm Ni sputter deposition and lift-off. Four-point measurements of the fabricated devices at room temperature and at 77 K clearly show rectification with on/off current ratio up to two orders of magnitude when the bias is applied across the p-n junction. The ideality factor of the junction current points to a significant generation-recombination contribution. The Ohmic characteristics in the p and n regions outside the junction make it possible to estimate the doping levels. We also observed backgate control of the NW junction current.

  15. Yield Improvement in Steel Casting (Yield II)

    SciTech Connect

    Richard A. Hardin; Christoph Beckermann; Tim Hays

    2002-02-18

    This report presents work conducted on the following main projects tasks undertaken in the Yield Improvement in Steel Casting research program: Improvement of Conventional Feeding and Risering Methods, Use of Unconventional Yield Improvement Techniques, and Case Studies in Yield Improvement. Casting trials were conducted and then simulated using the precise casting conditions as recorded by the participating SFSA foundries. These results present a statistically meaningful set of experimental data on soundness versus feeding length. Comparisons between these casting trials and casting trials performed more than forty years ago by Pellini and the SFSA are quite good and appear reasonable. Comparisons between the current SFSA feeding rules and feeding rules based on the minimum Niyama criterion reveal that the Niyama-based rules are generally less conservative. The niyama-based rules also agree better with both the trials presented here, and the casting trails performed by Pellini an d the SFSA years ago. Furthermore, the use of the Niyama criterion to predict centerline shrinkage for horizontally fed plate sections has a theoretical basis according to the casting literature reviewed here. These results strongly support the use of improved feeding rules for horizontal plate sections based on the Niyama criterion, which can be tailored to the casting conditions for a given alloy and to a desired level of soundness. The reliability and repeatability of ASTM shrinkage x-ray ratings was investigated in a statistical study performed on 128 x-rays, each of which were rated seven different times. A manual ''Feeding and Risering Guidelines for Steel Castings' is given in this final report. Results of casting trials performed to test unconventional techniques for improving casting yield are presented. These use a stacked arrangement of castings and riser pressurization to increase the casting yield. Riser pressurization was demonstrated to feed a casting up to four time s the

  16. Elevated carbon dioxide influences yield and photosynthetic responses of hydroponically-grown sweetpotato

    NASA Technical Reports Server (NTRS)

    Mortley, D.; Hill, J.; Loretan, P.; Bonsi, C.; Hill, W.; Hileman, D.; Terse, A.

    1996-01-01

    The response of 'TI-155' and 'Georgia Jet' sweetpotato cultivars to elevated CO2 concentrations of 400 (ambient), 750 and 1000 micromoles mol-1 were evaluated under controlled environment conditions using the nutrient film technique (NFT). Growth chamber conditions included photosynthetic photon flux (PPF) of 600 micromoles m-2 s-1, 14/10 light/dark period, and 70% +/- 5% RH. Plants were grown using a modified half-Hoagland nutrient solution with a pH range of 5.5-6.0 and an electrical conductivity of 0.12 S m-1. Gas exchange measurements were made using infrared gas analysis, an open-flow gas exchange system, and a controlled-climate cuvette. Photosynthetic (Pn) measurements were made at CO2 ranges of 50 to 1000 micromoles mol-1. Storage root yield/plant increased with CO2 up to 750 but declined at 1000 micromoles mol-1. Storage root dry matter (DM) and foliage dry weight increased with increasing CO2. Harvest index (HI) for both cultivars was highest at 750 micromoles mol-1. The PPF vs Pn curves were typical for C3 plants with saturation occurring at approximately 600 micromoles m-2 s-1. CO2 concentration did not significantly influence net Pn, transpiration, water-use-efficiency (WUE), and stomatal conductance. As measurement CO2 concentration increased, net Pn and WUE increased while transpiration and stomatal conductance decreased.

  17. The iron-age of superconductivity: structural correlations and commonalities among the various families having -Fe-Pn- slabs (Pn = P, As and Sb).

    PubMed

    Ganguli, Ashok K; Prakash, Jai; Thakur, Gohil S

    2013-01-21

    The fascination of mankind towards a sudden change of a property, like colour, shape, elasticity, viscosity, electrical conductivity and magnetism, is well known. If the change in property is such that it leads to disapperance of an existing property or development of a new property then the effect is magical. It is for this reason that superconductivity remains an enigma for scientists for over a century after Kammerlingh Onnes discovered that the electrical resistance of mercury falls to zero below a temperature of 4.2 K. Since then scientists have been enchanted by superconductivity. Over these hundred years attempts have been made to discover materials which show this effect at higher temperatures. After a very exciting period of Cu oxide superconductors (1986-1993) there has been a lull in the search for high T(c) materials. The discovery of superconductivity in 2008 at 26 K in LaOFeAs (F-doped) has renewed the excitement in the field of superconductivity. This breakthrough in an Fe-containing compound led to the discovery of several new families of Fe-based superconductors having either pnictogens (P, As) or chalcogen (Se, Te) of the type AFFeAs (A = alkaline-earth metal), AFe(2)As(2), AFeAs (A = alkali metals), A(3)M(2)O(5)Fe(2)As(2) (M = transition metals) and A(4)M(2)O(6)Fe(2)As(2). This review article discusses in detail the structural aspects of these new Fe-based superconductors which primarily consist of edge-shared distorted FeX(4) (X = pnictogen and chalcogen) tetrahedra and these tetrahedral layers are reponsible for enabling superconductivity. Extremely large upper critical field (>200 Tesla) of these superconductors make them promising for high field application. Structural commonalities and differences among different families of these superconductors have been outlined. We also discuss the common features and differences with the copper-oxide based superconductors. Here we have discussed all the Fe-based oxypnictide families (like LnOFePn, AFe(2

  18. Atmospheric Nitrogen Fluorescence Yield

    NASA Technical Reports Server (NTRS)

    Adams, J. H., Jr.; Christl, M. J.; Fountain, W. F.; Gregory, J. C.; Martens, K. U.; Sokolsky, Pierre; Whitaker, Ann F. (Technical Monitor)

    2001-01-01

    Several existing and planned experiments estimate the energies of ultra-high energy cosmic rays from air showers using the atmospheric nitrogen fluorescence. The nitrogen fluorescence yield from air shower electrons depends on the atmospheric composition. We will discuss the uncertainties in the fluorescence yield form electrons in the real atmosphere and describe a concept for a small balloon payload to measure the atmospheric fluorescence yield as a function of attitude.

  19. Uppermost mantle velocity from Pn tomography in the Gulf of Aden

    NASA Astrophysics Data System (ADS)

    Corbeau, Jordane; Rolandone, Frédérique; Leroy, Sylvie; Al-Lazki, Ali; Keir, Derek; Stuart, Graham; Stork, Anna

    2013-04-01

    We present an analysis of Pn traveltimes to determine lateral variations of velocity in the uppermost mantle and crustal thickness beneath the Gulf of Aden and its margins. No detailed tomographic image of the entire Gulf of Aden was available. Previous tomographic studies covered the eastern Gulf of Aden and were thus incomplete or at a large scale with a too low resolution to see the lithospheric structures. From 1990 to 2010, 49206 Pn arrivals were selected from the International Seismological Center catalogue. We also used temporary networks : YOCMAL (Young Conjugate Margins Laboratory) networks with broadband stations located in Oman, Yemen and Socotra from 2003 to 2011, and Djibouti network from 2009 to 2011. From these networks we picked Pn arrivals and selected 4110 rays. Using a least-squares tomographic code (Hearn, 1996), these data were analyzed to solve for velocity variations in the mantle lithosphere. We perform different inversions for shorter and longer ray path data sets in order to separate the shallow and deep structure within the mantle lid. In the upper lid, zones of low velocity (7.7 km/s) around Sanaa, Aden, Afar, and along the Gulf of Aden are related to active volcanism. Off-axis volcanism and a regional melting anomaly in the Gulf of Aden area may be connected to the Afar plume, and explained by the model of channeling material away from the Afar plume along ridge-axis. Our study validates the channeling model and shows that the influence of the Afar hotspot may extend much farther eastwards along the Aden and Sheba ridges into the Gulf of Aden than previously believed. Still in the upper lid, high Pn velocities (>8,2 km/s) are observed in Yemen and may be related to the presence of a magmatic underplating under the volcanic margin of Aden and under the Red Sea margins. In the lower lid, zones of low velocities are spatially located differently than in the upper lid. On the Oman margin, a low velocity zone (7.6 km/s) suggests deep partial

  20. Snake states and Majorana's in graphene quantum dots in the presence of a p-n junction

    NASA Astrophysics Data System (ADS)

    Peeters, Francois; Zarenia, M.; Pereira, J. M., Jr.; Farias, G. A.

    2013-03-01

    We investigate the magnetic interface states of graphene quantum dots that contain p-n junctions. Within a tight-binding approach, we consider rectangular quantum dots in the presence of a perpendicular magnetic field containing p-n, as well as p-n-p and n-p-n junctions. The results show the interplay between the edge states associated with the zigzag terminations of the sample and the snake states that arise at the p-n junction, due to the overlap between electron and hole states at the potential interface. Remarkable localized states are found at the crossing of the p-n junction with the zigzag edge having a dumb-bell shaped electron distribution. These states are localized Majorana states. The results are presented as function of the junction parameters and the applied magnetic flux.

  1. Bipolar resistive switching in YMnO3/Nb:SrTiO3 pn-heterojunctions

    NASA Astrophysics Data System (ADS)

    Bogusz, Agnieszka; Bürger, Danilo; Skorupa, Ilona; Schmidt, Oliver G.; Schmidt, Heidemarie

    2016-11-01

    Resistively switching oxides are promising materials for use in electronic applications such as nonvolatile memories, logic gates, and artificial synapses. This work presents the bipolar resistive switching (BRS) in YMnO3/Nb:SrTiO3 pn-heterojunctions. A thermally driven electroforming process is required prior to the observed BRS. Results indicate that the BRS in YMnO3/Nb:SrTiO3 originates from the combined effects of charge trapping and detrapping processes along with the electro-migration of charged point defects in the depletion layer of the pn-heterojunction. It is shown that the built-in voltage of the pn-heterojunctions can be tuned by the oxygen partial pressure during growth of the YMnO3 thin film and impacts the working parameters of the resistively switching cell. This study provides a guideline for material engineering of bipolar resistive switches based on pn-heterojunctions.

  2. Axially connected nanowire core-shell p-n junctions: a composite structure for high-efficiency solar cells.

    PubMed

    Wang, Sijia; Yan, Xin; Zhang, Xia; Li, Junshuai; Ren, Xiaomin

    2015-01-01

    A composite nanostructure for high-efficiency solar cells that axially connects nanowire core-shell p-n junctions is proposed. By axially connecting the p-n junctions in one nanowire, the solar spectrum is separated and absorbed in the top and bottom cells with respect to the wavelength. The unique structure of nanowire p-n junctions enables substantial light absorption along the nanowire and efficient radial carrier separation and collection. A coupled three-dimensional optoelectronic simulation is used to evaluate the performance of the structure. With an excellent current matching, a promising efficiency of 19.9% can be achieved at a low filling ratio of 0.283 (the density of the nanowire array), which is much higher than the tandem axial p-n junctions.

  3. Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes

    PubMed Central

    Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

    2016-01-01

    We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS2) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS2 and pentacene. The pentacene/MoS2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices. PMID:27829663

  4. Transparent CH3NH3SnCl3/Al-ZnO p-n heterojunction diode

    NASA Astrophysics Data System (ADS)

    Kumar, Sunil; Ansari, Mohd. Zubair; Khare, Neeraj

    2016-05-01

    A p-type Organic inorganic tin chloride (CH3NH3SnCl3) perovskite thin film has been synthesized by solution method. An n-type 1% Al doped ZnO (AZO) film has been deposited on FTO substrate by ultrasonic assisted chemical vapor deposition technique. A transparent CH3NH3SnCl3/AZO p-n heterojunction diode has been fabricated by spin coating technique. CH3NH3SnCl3/AZO p-n heterojunction shows 75% transparency in the visible region. I-V characteristic of CH3NH3SnCl3/AZO p-n heterojunction shows rectifying behavior of the diode. The diode parameters calculated as ideality factor η=2.754 and barrier height V= 0.76 eV. The result demonstrates the potentiality of CH3NH3SnCl3/AZO p-n heterojunction for transparent electronics.

  5. Acceptance Data Package: SXI Stepper Motor/Encoder. Aeroflex P/N 16187. A; Engineering Drawings and Associated Lists

    NASA Technical Reports Server (NTRS)

    1994-01-01

    Acceptance data package - engineering drawings and associated lists for fabrication, assembly and maintenance (cleaning, fluidized bed coating, bounding and staking) motor/encoded solar x-ray imager (SXI) (Aeroflex p/n 16187) were given.

  6. [Morphological analysis of transgenic tobacco plants expressing the PnEXPA3 gene of black poplar (Populus nigra)].

    PubMed

    Kuluev, B R; Safiullina, M G; Kniazev, A V; Chemeris, A V

    2013-01-01

    Transgenic tobacco plants overexpressing the PnEXPA3 gene of black poplar (Populus nigra), which encodes alpha-expansin, were obtained. The transgenic plants were characterized by increased size of epidermic and mesophyll cells of leaves. However, the size of leaves remained normal. Overexpression of the PnEXPA3 gene provided stimulatory effect only on the stem length. Other morphological traits of the transgenic plants remained unchanged.

  7. Calculation of Delayed Neutron Yields for Various Libraries

    NASA Astrophysics Data System (ADS)

    Huynh, T. D.; Jouanne, C.

    2014-04-01

    This paper presents the comparison between the total delayed neutron yields (νdbar) calculated and the recommended values proposed by Tuttle, the experimental data of Waldo and those of Benedetti. These data are given for thermal, fast, and high energy fission ranges. The calculation of total delayed neutron yields is performed either by the NJOY nuclear data processing system or by the summation method. The decay data found in the various evaluations as the delayed neutron branching ratios (Pn) and the cumulative fission yields (CY) can also be validated by delayed neutron yield calculation using the summation method. In the first method, where the treatment is performed by the NJOY system, the general purpose evaluation files (JEFF-3, JEF-2, ENDF/B-VII.0 and ENDF/B-VI.4 were considered. In the summation calculation, the data used are the delayed neutron branching ratios (also called delayed neutron emission probabilities) and the cumulative fission yields that are given for thermal, fast, high energy fission and spontaneous fission. These data are found in the Radioactive Decay Data and Fission Yield Data files (File 8) of nuclear data evaluations. In this study, we also perform a benchmark calculation with various libraries: JEF-2.2, JEFF3.1.1, ENDF/B-VII.0, ENDF/B-VII.1 and JENDL/FP-2011.

  8. Effect of random p-n junctions on quasi-solid-state dye-sensitized solar cells with polymer electrolyte

    NASA Astrophysics Data System (ADS)

    Cui, Jiarui; Yang, Ying; Yi, Pengfei; Guo, Xueyi

    2014-12-01

    In this paper, the effect of p-n junction additives via blending p-type semiconductors (NiO and CuI) with n-type TiO2 in polymer electrolyte on quasi-solid-state DSSCs is studied. The conduction mechanism of DSSCs modified with random p-n junctions has been investigated by FTIR, SEM, UV-Vis and electrochemical analysis. The results indicate that the CuI-TiO2 p-n blend modified polymer electrolyte reaches the maximum ionic conductivity of 6.44 mS cm-1, which is almost twice over than that of pure-TiO2 modified one. From photovoltaic study, it is found that introducing CuI-TiO2 and NiO-TiO2 p-n blends in polymer electrolyte can obviously improve electron recombination and light-to-electric conversion efficiency of DSSCs. The conversion efficiency of CuI-TiO2 p-n blend modified DSSC is 3.34%, which is much higher than that of pure TiO2 modified device (1.76%). It is also demonstrated that the photovoltaic properties of DSSCs directly depends on the ratio of p-type CuI and n-type TiO2 in the p-n blends and the optimal conversion efficiency of 4.27% is obtained at CuI:TiO2 ratio of 4:1.

  9. Peanut witches' broom (PnWB) phytoplasma-mediated leafy flower symptoms and abnormal vascular bundles development.

    PubMed

    Liu, Chi-Te; Huang, Hsin-Mei; Hong, Syuan-Fei; Kuo-Huang, Ling-Long; Yang, Chiao-Yin; Lin, Yen-Yu; Lin, Chan-Pin; Lin, Shih-Shun

    2015-01-01

    The peanut witches' broom (PnWB) phytoplasma causes virescence symptoms such as phyllody (leafy flower) in infected peanuts. However, the obligate nature of phytoplasma limits the study of host-pathogen interactions, and the detailed anatomy of PnWB-infected plants has yet to be reported. Here, we demonstrate that 4',6'-diamidino-2-phenylindole (DAPI) staining can be used to track PnWB infection. The DAPI-stained phytoplasma cells were observed in phloem/internal phloem tissues, and changes in vascular bundle morphology, including increasing pith rays and thinner cell walls in the xylem, were found. We also discerned the cell types comprising PnWB in infected sieve tube members. These results suggest that the presence of PnWB in phloem tissue facilitates the transmission of phytoplasma via sap-feeding insect vectors. In addition, PnWB in sieve tube members and changes in vascular bundle morphology might strongly promote the ability of phytoplasmas to assimilate nutrients. These data will help further an understanding of the obligate life cycle and host-pathogen interactions of phytoplasma.

  10. Electrical and photovoltaic characteristics of MoS{sub 2}/Si p-n junctions

    SciTech Connect

    Hao, Lanzhong Liu, Yunjie Gao, Wei; Han, Zhide; Xue, Qingzhong; Zeng, Huizhong; Wu, Zhipeng; Zhu, Jun; Zhang, Wanli

    2015-03-21

    Bulk-like molybdenum disulfide (MoS{sub 2}) thin films were deposited on the surface of p-type Si substrates using dc magnetron sputtering technique and MoS{sub 2}/Si p-n junctions were formed. The vibrating modes of E{sup 1}{sub 2g} and A{sub 1g} were observed from the Raman spectrum of the MoS{sub 2} films. The current density versus voltage (J-V) characteristics of the junction were investigated. A typical J-V rectifying effect with a turn-on voltage of 0.2 V was shown. In different voltage range, the electrical transporting of the junction was dominated by diffusion current and recombination current, respectively. Under the light illumination of 15 mW cm{sup −2}, the p-n junction exhibited obvious photovoltaic characteristics with a short-circuit current density of 3.2 mA cm{sup −2} and open-circuit voltage of 0.14 V. The fill factor and energy conversion efficiency were 42.4% and 1.3%, respectively. According to the determination of the Fermi-energy level (∼4.65 eV) and energy-band gap (∼1.45 eV) of the MoS{sub 2} films by capacitance-voltage curve and ultraviolet-visible transmission spectra, the mechanisms of the electrical and photovoltaic characteristics were discussed in terms of the energy-band structure of the MoS{sub 2}/Si p-n junctions. The results hold the promise for the integration of MoS{sub 2} thin films with commercially available Si-based electronics in high-efficient photovoltaic devices.

  11. Progress in p(+)n InP solar cells fabricated by thermal diffusion

    NASA Technical Reports Server (NTRS)

    Flood, D. J.; Brinker, D. J.; Weinberg, I.; Vargas, C.; Faur, Mircea; Faur, Maria; Goradia, C.; Goradia, M.; Fatemi, N. S.

    1993-01-01

    The performance results of our most recently thermally diffused InP solar cells using the p(+)n (Cd,S) structures are presented. We have succeeded in fabricating cells with measured AMO, 25 C V(sub oc) exceeding 880 mV (bare cells) which to the best of our knowledge is higher than previously reported V(sub oc) values for any InP homojunction solar cells. The cells were fabricated by thinning the emitter, after Au-Zn front contacting, from its initial thickness of about 4.5 microns to about 0.6 microns. After thinning, the exposed surface of the emitter was passivated by a thin (approximately 50A) P-rich oxide. Based on the measured EQY and J(sub sc)-V(sub oc) characteristics of our experimental high V(sub oc) p(+)n InP solar cells, we project that reducing the emitter thickness to 0.3 microns, using an optimized AR coating, maintaining the surface hole concentration of 3 x 10(exp 18)cm(sup -3), reducing the grid shadowing from actual 10.55 percent to 6 percent and reducing the contact resistance will increase the actual measured 12.57 percent AMO 25 C efficiency to about 20.1 percent. By using our state-of-the-art p(+)n structures which have a surface hole concentration of 4 x 10(exp 18)cm(sup -3) and slightly improving the front surface passivation, an even higher practically achievable AMO, 25 C efficiency of 21.3 percent is projected.

  12. δ-Ctenitoxin-Pn1a, a Peptide from Phoneutria nigriventer Spider Venom, Shows Antinociceptive Effect Involving Opioid and Cannabinoid Systems, in Rats.

    PubMed

    Emerich, Bruna Luiza; Ferreira, Renata C M; Cordeiro, Marta N; Borges, Márcia Helena; Pimenta, Adriano M C; Figueiredo, Suely G; Duarte, Igor Dimitri G; de Lima, Maria Elena

    2016-04-12

    PnTx4(6-1), henceforth renamed δ-Ctenitoxin-Pn1a (δ-CNTX-Pn1a), a peptide from Phoneutria nigriventer spider venom, initially described as an insect toxin, binds to site 3 of sodium channels in nerve cord synaptosomes and slows down sodium current inactivation in isolated axons in cockroaches (Periplaneta americana). δ-CNTX-Pn1a does not cause any apparent toxicity to mice, when intracerebroventricularly injected (30 μg). In this study, we evaluated the antinociceptive effect of δ-CNTX-Pn1a in three animal pain models and investigated its mechanism of action in acute pain. In the inflammatory pain model, induced by carrageenan, δ-CNTX-Pn1a restored the nociceptive threshold of rats, when intraplantarly injected, 2 h and 30 min after carrageenan administration. Concerning the neuropathic pain model, δ-CNTX-Pn1a, when intrathecally administered, reversed the hyperalgesia evoked by sciatic nerve constriction. In the acute pain model, induced by prostaglandin E₂, intrathecal administration of δ-CNTX-Pn1a caused a dose-dependent antinociceptive effect. Using antagonists of the receptors, we showed that the antinociceptive effect of δ-CNTX-Pn1a involves both the cannabinoid system, through CB₁ receptors, and the opioid system, through μ and δ receptors. Our data show, for the first time, that δ-Ctenitoxin-Pn1a is able to induce antinociception in inflammatory, neuropathic and acute pain models.

  13. δ-Ctenitoxin-Pn1a, a Peptide from Phoneutria nigriventer Spider Venom, Shows Antinociceptive Effect Involving Opioid and Cannabinoid Systems, in Rats

    PubMed Central

    Emerich, Bruna Luiza; Ferreira, Renata C. M.; Cordeiro, Marta N.; Borges, Márcia Helena; Pimenta, Adriano M. C.; Figueiredo, Suely G.; Duarte, Igor Dimitri G.; de Lima, Maria Elena

    2016-01-01

    PnTx4(6-1), henceforth renamed δ-Ctenitoxin-Pn1a (δ-CNTX-Pn1a), a peptide from Phoneutria nigriventer spider venom, initially described as an insect toxin, binds to site 3 of sodium channels in nerve cord synaptosomes and slows down sodium current inactivation in isolated axons in cockroaches (Periplaneta americana). δ-CNTX-Pn1a does not cause any apparent toxicity to mice, when intracerebroventricularly injected (30 μg). In this study, we evaluated the antinociceptive effect of δ-CNTX-Pn1a in three animal pain models and investigated its mechanism of action in acute pain. In the inflammatory pain model, induced by carrageenan, δ-CNTX-Pn1a restored the nociceptive threshold of rats, when intraplantarly injected, 2 h and 30 min after carrageenan administration. Concerning the neuropathic pain model, δ-CNTX-Pn1a, when intrathecally administered, reversed the hyperalgesia evoked by sciatic nerve constriction. In the acute pain model, induced by prostaglandin E2, intrathecal administration of δ-CNTX-Pn1a caused a dose-dependent antinociceptive effect. Using antagonists of the receptors, we showed that the antinociceptive effect of δ-CNTX-Pn1a involves both the cannabinoid system, through CB1 receptors, and the opioid system, through μ and δ receptors. Our data show, for the first time, that δ-Ctenitoxin-Pn1a is able to induce antinociception in inflammatory, neuropathic and acute pain models. PMID:27077886

  14. Using Colored Stochastic Petri Net (CS-PN) software for protocol specification, validation, and evaluation

    NASA Technical Reports Server (NTRS)

    Zenie, Alexandre; Luguern, Jean-Pierre

    1987-01-01

    The specification, verification, validation, and evaluation, which make up the different steps of the CS-PN software are outlined. The colored stochastic Petri net software is applied to a Wound/Wait protocol decomposable into two principal modules: request or couple (transaction, granule) treatment module and wound treatment module. Each module is specified, verified, validated, and then evaluated separately, to deduce a verification, validation and evaluation of the complete protocol. The colored stochastic Petri nets tool is shown to be a natural extension of the stochastic tool, adapted to distributed systems and protocols, because the color conveniently takes into account the numerous sites, transactions, granules and messages.

  15. High Beginning-of-Life Efficiency p/n InP Solar Cells

    NASA Technical Reports Server (NTRS)

    Hoffman, Richard W., Jr.; Fatemi, Navid S.; Weizer, Victor G.; Jenkins, Phillip P.; Ringel, Steven A.; Scheiman, David A.; Wilt, David M.; Brinker, David J.

    2004-01-01

    We have achieved a new record efficiency of 17.6%, (AM0) for a p/n InP homo-epitaxy solar cell. In addition, we have eliminated a previously observed photo-degradation of cell performance, which was due to losses in J(sub sc). Cells soaked in AM0 spectrum at one-sun intensity for an hour showed no significant change in cell performance. We have discovered carrier passivation effects when using Zn as the p-type dopant in the OMVPE growth of InP and have found a method to avoid the unexpected effects which result from typical operation of OMVPE cell growth.

  16. Spacially-resolved STIS spectroscopy of young H-deficient central stars of PN.

    NASA Astrophysics Data System (ADS)

    De Marco, O.; Cohen, M.; Barlow, M. J.

    2000-12-01

    Hydrogen-deficient central stars of planetary nebula (PN) present a mystery and a challenge in the evolution of low mass stars after they ascend the Asymptotic Giant Branch (AGB). This class represents about 20% of all known central stars and seems to evolve as a result of an outburst event early in the life of the post-AGB star. During this event, which is thought to be similar to a helium shell outburst, ALL the hydrogen is burned or ejected, leaving a central star made of helium and carbon, which can later develop strong mass-loss. SwSt1 is one such star. It has a very young PN, with high density and a very small apparent radius. Its star is hot (35000K) and has a substantial mass-loss. Because of its youth, this object, together with a handful of central stars, can be used to trace the evolution of this class back to their AGB ancestry and to the event that made them different from H-rich central stars. Recently-acquired spacially-resolved STIS observations, show density and abundance layering in the PN gas, which can be used to trace the object's history. In this paper, the HST observations are analyzed with stellar non-LTE codes, to determine the stellar parameters and hence the stellar evolutionary status (effective temperature and radius). Nebular photo-ionization codes, which use the synthetic stellar atmosphere as input, are then used to model the nebular emission as a function of radius. Probing into as little as the last 500 years in the life of this class of objects using their young PN, can characterize the event that is responsible for their hydrogen-deficient nature. Mass-loss on and after the AGB is still one of the least understood events in stellar astrophysics. Progress in understanding the super-efficient mass-loss that leads to central stars stripped of hydrogen would constitute a significant advance in characterizing AGB mass-loss in general.

  17. The radiation damage of crystalline silicon PN diode in tritium beta-voltaic battery.

    PubMed

    Lei, Yisong; Yang, Yuqing; Liu, Yebing; Li, Hao; Wang, Guanquan; Hu, Rui; Xiong, Xiaoling; Luo, Shunzhong

    2014-08-01

    A tritium beta-voltaic battery using a crystalline silicon convertor composed of (100)Si/SiO2/Si3N4 film degrades remarkably with radiation from a high intensity titanium tritide film. Simulation and experiments were carried out to investigate the main factor causing the degradation. The radiation damages mainly comes from the x-ray emitted from the titanium tritide film and beta particle can relieve the damages. The x-ray radiation induced positive charges in the SiO2 film destroying the output property of the PN diode with the induction of an electric field.

  18. Chemical Visualization of a GaN p-n junction by XPS

    PubMed Central

    Caliskan, Deniz; Sezen, Hikmet; Ozbay, Ekmel; Suzer, Sefik

    2015-01-01

    We report on an operando XPS investigation of a GaN diode, by recording the Ga2p3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device. PMID:26359762

  19. Uncooled CMOS terahertz imager using a metamaterial absorber and pn diode.

    PubMed

    Escorcia, Ivonne; Grant, James; Gough, John; Cumming, David R S

    2016-07-15

    We demonstrate a low-cost uncooled terahertz (THz) imager fabricated in a standard 180 nm CMOS process. The imager is composed of a broadband THz metamaterial absorber coupled with a diode microbolometer sensor where the pn junction is used as a temperature sensitive device. The metamaterial absorber array is integrated in the top metallic layers of a six metal layer process allowing for complete monolithic integration of the metamaterial absorber and sensor. We demonstrate the capability of the detector for stand-off imaging applications by using it to form transmission and reflection images of a metallic object hidden in a manila envelope.

  20. The northern Walker Lane refraction experiment: Pn arrivals and the northern Sierra Nevada root

    NASA Astrophysics Data System (ADS)

    Louie, John N.; Thelen, Weston; Smith, Shane B.; Scott, James B.; Clark, Matthew; Pullammanappallil, Satish

    2004-09-01

    In May 2002, we collected a new crustal refraction profile from Battle Mountain, Nevada across western Nevada, the Reno area, Lake Tahoe, and the northern Sierra Nevada Mountains to Auburn, CA. Mine blasts and earthquakes were recorded by 199 Texan instruments extending across this more than 450-km-long transect. The use of large mine blasts and the ultra-portable Texan recorders kept the field costs of this profile to less than US$10,000. The seismic sources at the eastern end were mining blasts at Barrick's GoldStrike mine. The GoldStrike mine produced several ripple-fired blasts using 8000-44,000 kg of ANFO each, a daily occurrence. First arrivals from the larger GoldStrike blasts are obvious to distances of 300 km in the raw records. First arrivals from a quarry blast west of the survey near Watsonville, CA, located by the Northern California Seismic Network with a magnitude of 2.2, can be picked across the recording array to distances of 600 km. The Watsonville blast provides a western source, nearly reversing the GoldStrike blasts. A small earthquake near Bridgeport, CA. also produced pickable P-wave arrivals across the transect, providing fan-shot data. Arrivals from M5 events in the Mariana and Kuril Islands also appear in the records. This refraction survey observes an unexpectedly deep crustal root under the northern Sierra Nevada range, over 50 km in thickness and possibly centered west of the topographic crest. Pn delays of 4-6 s support this interpretation. At Battle Mountain, Nevada, we observe anomalously thin crust over a limited region perhaps only 150 km wide, with a Moho depth of 19-23 km. Pn crossover distances of less than 80 km support this anomaly, which is surrounded by observations of more normal, 30-km-thick crust. A 10-km-thick and high-velocity lower-crustal "pillow" is an alternative hypothesis, but unlikely due to the lack of volcanics west of Battle Mountain. Large mine and quarry blasts prove very effective crustal refraction sources

  1. Disorder effects in the quantum Hall effect of graphene p-n junctions

    NASA Astrophysics Data System (ADS)

    Li, Jian; Shen, Shun-Qing

    2008-11-01

    The quantum Hall effect in graphene p-n junctions is studied numerically with emphasis on the effect of disorder at the interface of two adjacent regions. Conductance plateaus are found to be attached to the intensity of the disorder and are accompanied by universal conductance fluctuations in the bipolar regime, which is in good agreement with theoretical predictions of the random matrix theory on quantum chaotic cavities. The calculated Fano factors can be used in an experimental identification of the underlying transport character.

  2. Investigation of the /sup 12/C(. gamma. ,pn) reaction using tagged photons

    SciTech Connect

    Dancer, S.N.; MacGregor, I.J.D.; Annand, J.R.M.; Anthony, I.; Crawford, G.I.; Hall, S.J.; Kellie, J.D.; McGeorge, J.C.; Owens, R.O.; Wallace, P.A.; and others

    1988-09-05

    Tagged-photon measuremens of the /sup 12/C(..gamma..,pn) reaction in the photon energy range 83--133 MeV are reported. The measurements have achieved a good angular resolution, approx. =4/sup 0/, and a better missing-energy resolution, approx. =8 MeV, than any previous measurement. This has allowed events to be selected in which both the neutron and proton are ejected from the 1p shell of the /sup 12/C nucleus. The correlated momenta of the outgoing nucleon pairs are quantitatively explained by the quasideuteron mechanism.

  3. Model of human breathing reflected signal received by PN-UWB radar.

    PubMed

    Mabrouk, Mohamed; Rajan, Sreeraman; Bolic, Miodrag; Batkin, Izmail; Dajani, Hilmi R; Groza, Voicu Z

    2014-01-01

    Human detection is an integral component of civilian and military rescue operations, military surveillance and combat operations. Human detection can be achieved through monitoring of vital signs. In this article, a mathematical model of human breathing reflected signal received in PN-UWB radar is proposed. Unlike earlier published works, both chest and abdomen movements are considered for modeling the radar return signal along with the contributions of fundamental breathing frequency and its harmonics. Analyses of recorded reflected signals from three subjects in different postures and at different ranges from the radar indicate that ratios of the amplitudes of the harmonics contain information about posture and posture change.

  4. Photocurrent enhancement of graphene phototransistors using p-n junction formed by conventional photolithography process

    NASA Astrophysics Data System (ADS)

    Shimatani, Masaaki; Ogawa, Shinpei; Fujisawa, Daisuke; Okuda, Satoshi; Kanai, Yasushi; Ono, Takao; Matsumoto, Kazuhiko

    2016-11-01

    A p-n junction was developed in a graphene transistor by a simple photolithography process used in typical semiconductor processes. The p- and n-type regions were formed by coating photoresist on part of the graphene channel and immersion of the uncovered graphene region in alkali developer, respectively. A 3-fold enhancement of the photocurrent was observed at the maximum field effect mobility. It is therefore important to maximize the field effect mobility by doping to maximize the photocurrent. The results obtained here are an important step toward the production of high-sensitivity graphene-based phototransistors compatible with conventional industrial procedures.

  5. Argentina corn yield model

    NASA Technical Reports Server (NTRS)

    Callis, S. L.; Sakamoto, C.

    1984-01-01

    A model based on multiple regression was developed to estimate corn yields for the country of Argentina. A meteorological data set was obtained for the country by averaging data for stations within the corn-growing area. Predictor variables for the model were derived from monthly total precipitation, average monthly mean temperature, and average monthly maximum temperature. A trend variable was included for the years 1965 to 1980 since an increasing trend in yields due to technology was observed between these years.

  6. Argentina wheat yield model

    NASA Technical Reports Server (NTRS)

    Callis, S. L.; Sakamoto, C.

    1984-01-01

    Five models based on multiple regression were developed to estimate wheat yields for the five wheat growing provinces of Argentina. Meteorological data sets were obtained for each province by averaging data for stations within each province. Predictor variables for the models were derived from monthly total precipitation, average monthly mean temperature, and average monthly maximum temperature. Buenos Aires was the only province for which a trend variable was included because of increasing trend in yield due to technology from 1950 to 1963.

  7. Argentina soybean yield model

    NASA Technical Reports Server (NTRS)

    Callis, S. L.; Sakamoto, C.

    1984-01-01

    A model based on multiple regression was developed to estimate soybean yields for the country of Argentina. A meteorological data set was obtained for the country by averaging data for stations within the soybean growing area. Predictor variables for the model were derived from monthly total precipitation and monthly average temperature. A trend variable was included for the years 1969 to 1978 since an increasing trend in yields due to technology was observed between these years.

  8. Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction.

    PubMed

    Ross, Jason S; Rivera, Pasqual; Schaibley, John; Lee-Wong, Eric; Yu, Hongyi; Taniguchi, Takashi; Watanabe, Kenji; Yan, Jiaqiang; Mandrus, David; Cobden, David; Yao, Wang; Xu, Xiaodong

    2017-02-08

    Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and a long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p-n junctions in a MoSe2-WSe2 heterobilayer. Applying a forward bias enables the first observation of electroluminescence from interlayer excitons. At zero bias, the p-n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller than the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is 2 orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to the opposite layers. These results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.

  9. Controlled Generation of a p-n Junction in a Waveguide Integrated Graphene Photodetector.

    PubMed

    Schuler, Simone; Schall, Daniel; Neumaier, Daniel; Dobusch, Lukas; Bethge, Ole; Schwarz, Benedikt; Krall, Michael; Mueller, Thomas

    2016-11-09

    With its electrically tunable light absorption and ultrafast photoresponse, graphene is a promising candidate for high-speed chip-integrated photonics. The generation mechanisms of photosignals in graphene photodetectors have been studied extensively in the past years. However, the knowledge about efficient light conversion at graphene p-n junctions has not yet been translated into high-performance devices. Here, we present a graphene photodetector integrated on a silicon slot-waveguide, acting as a dual gate to create a p-n junction in the optical absorption region of the device. While at zero bias the photothermoelectric effect is the dominant conversion process, an additional photoconductive contribution is identified in a biased configuration. Extrinsic responsivities of 35 mA/W, or 3.5 V/W, at zero bias and 76 mA/W at 300 mV bias voltage are achieved. The device exhibits a 3 dB bandwidth of 65 GHz, which is the highest value reported for a graphene-based photodetector.

  10. Solar-energy conversion and light emission in an atomic monolayer p-n diode.

    PubMed

    Pospischil, Andreas; Furchi, Marco M; Mueller, Thomas

    2014-04-01

    The limitations of the bulk semiconductors currently used in electronic devices-rigidity, heavy weight and high costs--have recently shifted the research efforts to two-dimensional atomic crystals such as graphene and atomically thin transition-metal dichalcogenides. These materials have the potential to be produced at low cost and in large areas, while maintaining high material quality. These properties, as well as their flexibility, make two-dimensional atomic crystals attractive for applications such as solar cells or display panels. The basic building blocks of optoelectronic devices are p-n junction diodes, but they have not yet been demonstrated in a two-dimensional material. Here, we report a p-n junction diode based on an electrostatically doped tungsten diselenide (WSe2) monolayer. We present applications as a photovoltaic solar cell, a photodiode and a light-emitting diode, and obtain light-power conversion and electroluminescence efficiencies of ∼ 0.5% and ∼ 0.1%, respectively. Given recent advances in the large-scale production of two-dimensional crystals, we expect them to profoundly impact future developments in solar, lighting and display technologies.

  11. p-n Heterojunction of doped graphene films obtained by pyrolysis of biomass precursors.

    PubMed

    Latorre-Sánchez, Marcos; Primo, Ana; Atienzar, Pedro; Forneli, Amparo; García, Hermenegildo

    2015-02-25

    Nitrogen-doped graphene [(N)G] obtained by pyrolysis at 900 °C of nanometric chitosan films exhibits a Hall effect characteristic of n-type semiconductors. In contrast, boron-doped graphene [(B)G] obtained by pyrolysis of borate ester of alginate behaves as a p-type semiconductor based also on the Hall effect. A p-n heterojunction of (B)G-(N)G films is built by stepwise coating of a quartz plate using a mask. The heterojunction is created by the partial overlapping of the (B)G-(N)G films. Upon irradiation with a xenon lamp of aqueous solutions of H(2) PtCl(6) and MnCl(2) in contact with the heterojunction, preferential electron migration from (B)G to (N)G with preferential location of positive holes on (B)G is established by observation in scanning electron microscopy of the formation of Pt nanoparticles (NP) on (N)G and MnO(2) NP on (B)G. The benefits of the heterojunction with respect to the devices having one individual component as a consequence of the electron migration through the p-n heterojunction are illustrated by measuring the photocurrent in the (B)G-(N)G heterojunction (180% current enhancement with respect to the dark current) and compared it to the photocurrent of the individual (B)G (15% enhancement) and (N)G (55% enhancement) components.

  12. Extremely large, gate tunable spin Hall angle in 3D Topological Insulator pn junction

    NASA Astrophysics Data System (ADS)

    Habib, K. M. Masum; Sajjad, Redwan; Ghosh, Avik

    2015-03-01

    The band structure of the surface states of a three dimensional Topological Insulator (3D TI) is similar to that of graphene featuring massless Dirac Fermions. We show that due to this similarity, the chiral tunneling of electron in a graphene pn junction also appears in 3D TI. Electrons with very small incident angle (modes) are allowed to transmit through a TI pn junction (TIPNJ) due to the chiral tunneling. The rest of the electrons are reflected. As a result, the charge current in a TIPNJ is suppressed. Due to the spin momentum locking, all the small angle modes are spin-down states. Therefore, the transmitted end of the TIPNJ becomes highly spin polarized. On the other hand, the spin of the reflected electron is flipped due to spin momentum locking. This enhances the spin current at the injection end. Thus, the interplay between the chiral tunneling and spin momentum locking reduces the charge current but enhances the spin current at the same time, leading to an extremely large (~20) spin Hall angle. Since the chiral tunneling can be controlled by an external electric field, the spin Hall angle is gate tunable. The spin current generated by a TIPNJ can be used for energy-efficient switching of nanoscaled ferromagnets, which is an essential part of spintronic devices. This work is supported by the NRI INDEX center.

  13. High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

    PubMed Central

    Dhyani, Veerendra; Das, Samaresh

    2017-01-01

    Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS2 p-n heterojunction photodetector with simple and CMOS compatible approach has been reported here. The large area MoS2 thin film on silicon platform has been synthesized by sulfurization of RF-sputtered MoO3 films. The fabricated molecular layers of MoS2 on silicon offers high responsivity up to 8.75 A/W (at 580 nm and 3 V bias) with ultra-fast response of 10 μsec (rise time). Transient measurements of Si/MoS2 heterojunction under the modulated light reveal that the devices can function up to 50 kHz. The Si/MoS2 heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ≈1.4 × 1012 Jones (2 V bias). Reproducible low dark current and high responsivity from over 20 devices in the same wafer has been measured. Additionally, the MoS2/Si photodetectors exhibit excellent stability in ambient atmosphere. PMID:28281652

  14. The ARGOS wavefront sensor pnCCD camera for an ELT: characteristics, limitations and applications

    NASA Astrophysics Data System (ADS)

    de Xivry, G. Orban; Ihle, S.; Ziegleder, J.; Barl, L.; Hartmann, R.; Rabien, S.; Soltau, H.; Strueder, L.

    2011-09-01

    From low-order to high-order AO, future wave front sensors on ELTs require large, fast, and low-noise detectors with high quantum efficiency and low dark current. While a detector for a high-order Shack-Hartmann WFS does not exist yet, the current CCD technology pushed to its limits already provides several solutions for the ELT AO detector requirements. One of these devices is the new WFS pnCCD camera of ARGOS, the Ground-Layer Adaptive Optics system (GLAO) for LUCIFER at LBT. Indeed, with its 264x264 pixels, 48 mu m pixel size and 1kHz frame rate, this camera provides a technological solution to different needs of the AO systems for ELTs, such as low-order but as well possibly higher order correction using pyramid wavefront sensing. In this contribution, we present the newly developped WFS pnCCD camera of ARGOS and how it fulfills future detector needs of AO on ELTs.

  15. Horizontal Silicon Nanowires with Radial p-n Junctions: A Platform for Unconventional Solar Cells.

    PubMed

    Zhang, Xing; Pinion, Christopher W; Christesen, Joseph D; Flynn, Cory J; Celano, Thomas A; Cahoon, James F

    2013-06-20

    The silicon p-n junction is the most successful solar energy technology to date, yet it accounts for a marginal percentage of worldwide energy production. To change the status quo, a disruptive technological breakthrough is needed. In this Perspective, we discuss the potential for complex silicon nanowires to serve as a platform for next-generation photovoltaic devices. We review the synthesis, electrical characteristics, and optical properties of core/shell silicon nanowires that are subwavelength in diameter and contain radial p-n junctions. We highlight the unique features of these nanowires, such as optical antenna effects that concentrate light and intense built-in electric fields that enable ultrafast charge-carrier separation. We advocate a paradigm in which nanowires are arranged in periodic horizontal arrays to form ultrathin devices. Unlike conventional planar silicon, nanowire structures provide the flexibility to incorporate multiple semiconductor, dielectric, and metallic materials in a single system, providing the foundation for a disruptive, unconventional solar energy technology.

  16. Flexible Photodiodes Based on Nitride Core/Shell p-n Junction Nanowires.

    PubMed

    Zhang, Hezhi; Dai, Xing; Guan, Nan; Messanvi, Agnes; Neplokh, Vladimir; Piazza, Valerio; Vallo, Martin; Bougerol, Catherine; Julien, François H; Babichev, Andrey; Cavassilas, Nicolas; Bescond, Marc; Michelini, Fabienne; Foldyna, Martin; Gautier, Eric; Durand, Christophe; Eymery, Joël; Tchernycheva, Maria

    2016-10-05

    A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p-n junction nanowires containing InGaN/GaN quantum wells grown by MOVPE. Electron/hole generation and transport in core/shell nanowires are modeled within nonequilibrium Green function formalism showing a good agreement with experimental results. Fully flexible transparent contacts based on a silver nanowire network are used for device fabrication, which allows bending the detector to a few millimeter curvature radius without damage. The detector shows a photoresponse at wavelengths shorter than 430 nm with a peak responsivity of 0.096 A/W at 370 nm under zero bias. The operation speed for a 0.3 × 0.3 cm(2) detector patch was tested between 4 Hz and 2 kHz. The -3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is compatible with UV monitoring applications.

  17. Solar-energy conversion and light emission in an atomic monolayer p-n diode

    NASA Astrophysics Data System (ADS)

    Pospischil, Andreas; Furchi, Marco M.; Mueller, Thomas

    2014-04-01

    The limitations of the bulk semiconductors currently used in electronic devices--rigidity, heavy weight and high costs--have recently shifted the research efforts to two-dimensional atomic crystals such as graphene and atomically thin transition-metal dichalcogenides. These materials have the potential to be produced at low cost and in large areas, while maintaining high material quality. These properties, as well as their flexibility, make two-dimensional atomic crystals attractive for applications such as solar cells or display panels. The basic building blocks of optoelectronic devices are p-n junction diodes, but they have not yet been demonstrated in a two-dimensional material. Here, we report a p-n junction diode based on an electrostatically doped tungsten diselenide (WSe2) monolayer. We present applications as a photovoltaic solar cell, a photodiode and a light-emitting diode, and obtain light-power conversion and electroluminescence efficiencies of ~0.5% and ~0.1%, respectively. Given recent advances in the large-scale production of two-dimensional crystals, we expect them to profoundly impact future developments in solar, lighting and display technologies.

  18. High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

    NASA Astrophysics Data System (ADS)

    Dhyani, Veerendra; Das, Samaresh

    2017-03-01

    Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS2 p-n heterojunction photodetector with simple and CMOS compatible approach has been reported here. The large area MoS2 thin film on silicon platform has been synthesized by sulfurization of RF-sputtered MoO3 films. The fabricated molecular layers of MoS2 on silicon offers high responsivity up to 8.75 A/W (at 580 nm and 3 V bias) with ultra-fast response of 10 μsec (rise time). Transient measurements of Si/MoS2 heterojunction under the modulated light reveal that the devices can function up to 50 kHz. The Si/MoS2 heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ≈1.4 × 1012 Jones (2 V bias). Reproducible low dark current and high responsivity from over 20 devices in the same wafer has been measured. Additionally, the MoS2/Si photodetectors exhibit excellent stability in ambient atmosphere.

  19. Anisotropic surface melting in lyotropic cubic crystals. Part 1: Pn3m/L1 interface, poor faceting

    NASA Astrophysics Data System (ADS)

    Grenier, J.; Plötzing, T.; Rohe, D.; Pieranski, P.

    2006-02-01

    From experiments with ice or metal crystals, in the vicinity of their crystal/liquid/vapor triple points, it is known that melting of crystals starts on their surfaces and is anisotropic. It is shown here by direct observations under an optical microscope that this anisotropic surface melting phenomenon occurs also in lyotropic systems. In the case of C12EO2/water mixture, it takes place in the vicinity of the peritectic Pn3m/L3/L1 triple point. Above the peritectic triple point, where the Pn3m and L1 phases coexist in the bulk, the surface of a Pn3m-in-L1 crystal is composed of (111)-type facets surrounded by rough surfaces. The angular junction suggests that rough surfaces are wet by a L3-like layer while facets stay “dry”. This is analogous to the pre-melting at rough surfaces in solid crystals. Upon cooling below the peritectic triple point, where L3 and L1 phases coexist in the bulk, a thick layer of the L3 phase grows from the pre-melted, rough Pn3m/L1 interface. Simultaneously, facets stay dry and their radius decreases. In this tri-phasic configuration, stable in a narrow temperature range, the L3/L1 and L3/Pn3m interfaces have shapes of constant mean curvature surfaces having common borders: edges of facets.

  20. Photodetection in p-n junctions formed by electrolyte-gated transistors of two-dimensional crystals

    NASA Astrophysics Data System (ADS)

    Kozawa, Daichi; Pu, Jiang; Shimizu, Ryo; Kimura, Shota; Chiu, Ming-Hui; Matsuki, Keiichiro; Wada, Yoshifumi; Sakanoue, Tomo; Iwasa, Yoshihiro; Li, Lain-Jong; Takenobu, Taishi

    2016-11-01

    Transition metal dichalcogenide monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for optoelectronic device applications. In the case of photoelectric conversion devices such as photodetectors and photovoltaic cells, p-n junctions are one of the most important devices. Here, we demonstrate photodetection with WSe2 monolayer films. We prepare the electrolyte-gated ambipolar transistors and electrostatic p-n junctions are formed by the electrolyte-gating technique at 270 K. These p-n junctions are cooled down to fix the ion motion (and p-n junctions) and we observed the reasonable photocurrent spectra without the external bias, indicating the formation of p-n junctions. Very interestingly, two-terminal devices exhibit higher photoresponsivity than that of three-terminal ones, suggesting the formation of highly balanced anion and cation layers. The maximum photoresponsivity reaches 5 mA/W in resonance with the first excitonic peak. Our technique provides important evidence for optoelectronics in atomically thin crystals.

  1. p-n junction CuO/BiVO₄ heterogeneous nanostructures: synthesis and highly efficient visible-light photocatalytic performance.

    PubMed

    Wang, Wenzhong; Wang, Jun; Wang, Zhizhen; Wei, Xuanzhen; Liu, Li; Ren, Qingshan; Gao, Wenliang; Liang, Yujie; Shi, Honglong

    2014-05-14

    A new strategy via coupling a polyol route with an oxidation process has been developed to successfully synthesize p-n junction CuO/BiVO4 heterogeneous nanostructures. The experimental results reveal that the as-prepared p-n junction CuO/BiVO4 heterogeneous nanostructures exhibit much higher visible-light-driven photocatalytic activity for the degradation of model dye rhodamine B (RhB) than the pure BiVO4 nanocrystals. The photocatalytic degradation rate (C/C0) of the RhB for p-n junction CuO/BiVO4 heterogeneous nanostructures is about two times higher than that of pure BiVO4 nanocrystals. The enhanced photocatalytic efficiency is attributed to a large number of p-n junctions in CuO/BiVO4 heterogeneous nanostructures, which effectively reduces the recombination of electrons and holes by charge transfer from n-type BiVO4 to the attached p-type CuO nanoparticles. This work not only provides an efficient route to enhance the visible-light-driven photocatalytic activity of BiVO4, but also offers a new strategy for fabricating p-n junction heterogeneous nanostructure photocatalysts, which are expected to show considerable potential application in solar-driven wastewater treatment and water splitting.

  2. The serpin PN1 is a feedback regulator of FGF signaling in germ layer and primary axis formation.

    PubMed

    Acosta, Helena; Iliev, Dobromir; Grahn, Tan Hooi Min; Gouignard, Nadège; Maccarana, Marco; Griesbach, Julia; Herzmann, Svende; Sagha, Mohsen; Climent, Maria; Pera, Edgar M

    2015-03-15

    Germ layer formation and primary axis development rely on Fibroblast growth factors (FGFs). In Xenopus, the secreted serine protease HtrA1 induces mesoderm and posterior trunk/tail structures by facilitating the spread of FGF signals. Here, we show that the serpin Protease nexin-1 (PN1) is transcriptionally activated by FGF signals, suppresses mesoderm and promotes head development in mRNA-injected embryos. An antisense morpholino oligonucleotide against PN1 has the opposite effect and inhibits ectodermal fate. However, ectoderm and anterior head structures can be restored in PN1-depleted embryos when HtrA1 and FGF receptor activities are diminished, indicating that FGF signals negatively regulate their formation. We show that PN1 binds to and inhibits HtrA1, prevents degradation of the proteoglycan Syndecan 4 and restricts paracrine FGF/Erk signaling. Our data suggest that PN1 is a negative-feedback regulator of FGF signaling and has important roles in ectoderm and head development.

  3. Design and fabrication of a 20 MHz pn-diode silicon ring resonator with in-plane vibration mode

    NASA Astrophysics Data System (ADS)

    Asahi, Yoichi; Tanigawa, Hiroshi; Nishino, Tomoki; Furutsuka, Takashi; Suzuki, Kenichiro

    2016-06-01

    In this paper, we report a new microelectromechanical system (MEMS) resonator based on the pn-diode principle. The pn-diode-based resonator can eliminate the narrow gap that conventional electrostatic MEMS resonators need between driving electrodes. This is expected to solve several serious problems related to fabrication, packaging, and lifetime. However, the resonators previously reported had pn-diodes formed in the vertical direction. Because the resonant frequency is determined by the thickness of the resonator plate, the resonant frequency in formed resonators cannot be changed in the same chip. To solve this problem, we newly design a pn-diode resonator with a lateral vibration. Because the resonant frequency is determined by plate width, this new resonator can provide various resonators with different frequencies in a chip, which is most suitable for the integration of MEMS resonators with electronic circuits. Our research objective at present is related to design and fabrication. By using a simulator, we design a ring resonator of 20 MHz. In the fabrication, we develop a technique of using ion implantation to form a 3-µm-thick pn-diode. The results shown here are very useful for improving the MEMS resonators.

  4. Direct imaging and probing of the p-n junction in a planar polymer light-emitting electrochemical cell.

    PubMed

    Hu, Yufeng; Gao, Jun

    2011-02-23

    A vast array of semiconductor applications relies on the ability to dope the materials by the controlled introduction of impurities in order to achieve desired charge carrier concentration and conduction type. In this way, various functional metal/semiconductor or semiconductor/semiconductor junctions can be constructed for device applications. Conjugated polymers are organic semiconductors that can be electrochemically doped to form a dynamic p-n junction. The electronic structure and even the existence of such a polymer p-n junction had been the subject of intense scrutiny and debate. In this work, the formation of the world's largest frozen polymer p-n junction and its light-emission are visualized. With a pair of micromanipulated probes, we mapped the potential distribution of the p-n junction under bias across the entire interelectrode gap of over 10 mm. Site-selective current-voltage measurements reveal that the polymer junction is a graded p-n junction, with a much more conductive p region than n region.

  5. Extension of the DSX-formalism to 2PN order for the problem of light propagation

    NASA Astrophysics Data System (ADS)

    Xu, Chongming; Klioner, Sergei; Soffel, Michael; Wu, Xuejun

    2012-08-01

    The well known Damour - Soffel - Xu (DSX) formalism of relativistic celestial mechanics and astronomical reference systems is restricted to the first post - Newtonian (1PN) approximation of Einstein ’ s theory of gravity. The key features of the DSX - formalism are: the use of N+ 1 different coordinate systems for the description of the gravitational N body problem and a special canonical way of writing the metric tensor in these N+1coordinate systems; introducing the potentials (w, W) and vector potentials (w i ,W a ) to describe the metric tensor in global coordinates (small symbols) and in the local coordinate systems where the metric potentials satisfy linear equations and separating W and W a into internal and external parts in every N local coordinate systems. The internal part is determined by local gravitational sources (Blanchet - Damour (B - D) multipole moments) and the external part can be determined by matching the metric tensors in the global and the local system. It is the purpose of this work to extend the DS X formalism to include also certain terms of second post - Newtonian (2PN) order. Since one main field of application will be high - precision astrometry only the spatial part of the metric tensor will be modified to correctly describe the propagation of light - rays to 2PN order, considering also terms of order c - 6 . In this way new potentials (q ij , Q ab ) appear in the global and local metric tensors. These new potentials are related with the DSX metric potentials and the energy - momentum tensor and also satisfy linear equations. H ere it should be emphasized that the introduction of q ij and Q ab does not influence the relations and equations for the metric potentials, i.e., they do not destroy the spirit of the DSX formalism in our extension. As well as in the DSX formalism Q ab can be separated into an internal part Q +ab and an external part, ab . The Q +ab - terms in a local system will be related with the B - D mass - multipole

  6. Pn wave geometrical spreading and attenuation in Northeast China and the Korean Peninsula constrained by observations from North Korean nuclear explosions

    NASA Astrophysics Data System (ADS)

    Zhao, Lian-Feng; Xie, Xiao-Bi; Tian, Bao-Feng; Chen, Qi-Fu; Hao, Tian-Yao; Yao, Zhen-Xing

    2015-11-01

    We investigate the geometric spreading and attenuation of seismic Pn waves in Northeast China and the Korean Peninsula. A high-quality broadband Pn wave data set generated by North Korean nuclear tests is used to constrain the parameters of a frequency-dependent log-quadratic geometric spreading function and a power law Pn Q model. The geometric spreading function and apparent Pn wave Q are obtained for Northeast China and the Korean Peninsula between 2.0 and 10.0 Hz. Using the two-station amplitude ratios of the Pn spectra and correcting them with the known spreading function, we remove the contributions of the source and crust from the apparent Pn Q and retrieve the P wave attenuation information along the pure upper mantle path. We then use both Pn amplitudes and amplitude ratios in a tomographic approach to obtain the upper mantle P wave attenuation in the studied area. The Pn wave spectra observed in China are compared with those recorded in Japan, and the result reveals that the high-frequency Pn signal across the oceanic path attenuated faster compared with those through the continental path.

  7. Novel fully vertical GaN p-n diode on Si substrate grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Mase, Suguru; Urayama, Yuya; Hamada, Takeaki; Freedsman, Joseph J.; Egawa, Takashi

    2016-11-01

    We report novel GaN fully vertical p-n diode on Si grown by metalorganic chemical vapor deposition. The thick strained layer superlattice is effective in controlling a doping level of 1016 cm-3 in an n--GaN drift layer. The GaN p-n diode exhibits a differential on-resistance R on of 7.4 mΩ cm2, a turn-on voltage of 3.4 V, and a breakdown voltage V B of 288 V. The corresponding Baliga’s figure of merit (FOM) V\\text{B}2/R\\text{on} is 11.2 MW/cm2. A good FOM value for the GaN-on-Si vertical p-n diode is realized for a drift layer thickness of 1.5 µm without using substrate removal technology.

  8. [Effects of alternate partial root-zone subsurface drip irrigation on potato yield and water use efficiency].

    PubMed

    Huang, Zhong-Dong; Qi, Xue-Bin; Fan, Xiang-Yang; Hu, Chao; Zhu, Dong-Hai; Li, Ping; Qiao, Dong-Mei

    2010-01-01

    Field experiment was conducted to investigate the effects of alternate partial root-zone subsurface drip irrigation (APRSDI) on the physiological responses, yield, and water use efficiency of potato. Compared with conventional drip irrigation (CDI), APRSDI had less negative effects on the potato leaf photosynthesis rate (P(n)), but decreased the transpiration rate and stomatal conductance significantly. The slightly higher P(n) under CDI was at the expense of consuming more water. No significant difference was observed in the potato yield under APRSDI and CDI, but APRSDI saved the irrigation amount by 25.8% and increased the irrigation water use efficiency and total water use efficiency by 27.5% and 15.3%, respectively, suggesting that APRSDI would be a feasible water-saving irrigation technique for the planting of potato.

  9. A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantation

    SciTech Connect

    Ivanov, P. A. Potapov, A. S.; Samsonova, T. P.; Korol'kov, O.; Sleptsuk, N.

    2011-10-15

    Deep-level transient spectroscopy (DLTS) has been used to study p-n junctions fabricated by implantation of boron into epitaxial 4H-SiC films with n-type conductivity and the donor concentration (8-9) Multiplication-Sign 10{sup 14} cm{sup -3}. A DLTS signal anomalous in sign is observed; this signal is related to recharging of deep compensating boron-involved centers in the n-type region near the metallurgical boundary of the p-n junction.

  10. Atmospheric Fluorescence Yield

    NASA Technical Reports Server (NTRS)

    Adams, James H., Jr.; Christl, M. J.; Fountain, W. F.; Gregory, J. C.; Martens, K.; Sokolsky, P.; Whitaker, Ann F. (Technical Monitor)

    2001-01-01

    Several existing and planned experiments estimate the energies of ultra-high energy cosmic rays from air showers using the atmospheric fluorescence from these showers. Accurate knowledge of the conversion from atmospheric fluorescence to energy loss by ionizing particles in the atmosphere is key to this technique. In this paper we discuss a small balloon-borne instrument to make the first in situ measurements versus altitude of the atmospheric fluorescence yield. The instrument can also be used in the lab to investigate the dependence of the fluorescence yield in air on temperature, pressure and the concentrations of other gases that present in the atmosphere. The results can be used to explore environmental effects on and improve the accuracy of cosmic ray energy measurements for existing ground-based experiments and future space-based experiments.

  11. Method utilizing laser-processing for the growth of epitaxial p-n junctions

    DOEpatents

    Young, R.T.; Narayan, J.; Wood, R.F.

    1979-11-23

    This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.

  12. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    SciTech Connect

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep; Bader, Samuel

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  13. Modelling of chemical and thermal changes in well PN-26 Palinpinon geothermal field, Philippines

    SciTech Connect

    Malate, R.C.M.; O'Sullivan, M.J. )

    1991-01-01

    Significant changes in temperature, chloride and silica concentration have occurred in well PN-26 of the Palinpinon Geothermal Field as a result of reinjection fluid returning. The chloride changes are modelled by a simple time-dependent production - reinjection lumped parameter model. Analytic solutions are derived for both constant and variable production rates. The decline in measured wellbore temperature is then modelled by coupling the chloride mass balance model to a fracture flow model. Production silica changes are also modelled by coupling the silica mass balance model for the production area to a transport and deposition model for the fractured zone. The final model in this paper is able to match changes in chloride, temperature and silica.

  14. Application of PN and avalanche silicon photodiodes to low-level optical

    NASA Technical Reports Server (NTRS)

    Eppeldauer, G.; Schaefer, A. R.

    1988-01-01

    New approaches to the discovery of other planetary systems require very sensitive and stable detection techniques in order to succeed. Two methods in particular, the astrometric and the photometric methods, require this. To begin understanding the problems and limitations of solid state detectors regarding this application, preliminary experiments were performed at the National Bureau of Standards and a low light level detector characterization facility was built. This facility is briefly described, and the results of tests conducted in it are outlined. A breadboard photometer that was used to obtain stellar brightness ratio precision data is described. The design principles of PN and avalanche silicon photodiodes based on low light level measuring circuits are discussed.

  15. Assessing thermal damage in silicon PN-junctions using Raman thermometry

    SciTech Connect

    Beechem, Thomas E.; Serrano, Justin R.; McDonald, Anthony; Mani, Seethambal

    2013-03-28

    Laser machining is frequently utilized in the manufacture of photovoltaics. A natural by-product of these fabrication processes, heat, not only serves as a means of material removal but also modifies the material in an extended region beyond that ideally intended for alteration. This modified region, termed the heat affected zone, is detrimental to performance and should therefore be minimized. While undoubtedly thermal in origin, it is unclear exactly how the thermal environment during laser machining correlates to changes in the PN-junction that reduce performance. In response, we combine in-situ Raman based thermometry measurements with post-event failure analysis to identify the physical mechanisms damaging the junction during laser machining. From this approach, damage is shown to initiate prior to melting and be driven primarily by the diffusion of dopants for fluences that do not induce ablation. Additionally, comparatively small regions of damage are shown to have a large impact on operation.

  16. Template method for fabricating interdigitate p-n heterojunction for organic solar cell.

    PubMed

    Hu, Jianchen; Shirai, Yasuhiro; Han, Liyuan; Wakayama, Yutaka

    2012-08-21

    Anodic aluminum oxide (AAO) templates are used to fabricate arrays of poly(3-hexylthiophene) (P3HT) pillars. This technique makes it possible to control the dimensions of the pillars, namely their diameters, intervals, and heights, on a tens-of-nanometer scale. These features are essential for enhancing carrier processes such as carrier generation, exciton diffusion, and carrier dissociation and transport. An interdigitated p-n junction between P3HT pillars and fullerene (C60) exhibits a photovoltaic effect. Although the device properties are still preliminary, the experimental results indicate that an AAO template is an effective tool with which to develop organic solar cells because highly regulated nanostructures can be produced on large areas exceeding 100 mm2.

  17. Template method for fabricating interdigitate p-n heterojunction for organic solar cell

    NASA Astrophysics Data System (ADS)

    Hu, Jianchen; Shirai, Yasuhiro; Han, Liyuan; Wakayama, Yutaka

    2012-08-01

    Anodic aluminum oxide (AAO) templates are used to fabricate arrays of poly(3-hexylthiophene) (P3HT) pillars. This technique makes it possible to control the dimensions of the pillars, namely their diameters, intervals, and heights, on a tens-of-nanometer scale. These features are essential for enhancing carrier processes such as carrier generation, exciton diffusion, and carrier dissociation and transport. An interdigitated p-n junction between P3HT pillars and fullerene (C60) exhibits a photovoltaic effect. Although the device properties are still preliminary, the experimental results indicate that an AAO template is an effective tool with which to develop organic solar cells because highly regulated nanostructures can be produced on large areas exceeding 100 mm2.

  18. DLTS Study of RIE-Induced Deep Levels in Si Using p+n Diode Arrays

    NASA Astrophysics Data System (ADS)

    Watanabe, Miyoko Oku; Taguchi, Minoru; Kanzaki, Koichi; Zohta, Yasuhito

    1983-02-01

    Deep levels in Si induced by reactive ion etching (RIE) of SiO2 film have been studied by DLTS. In order to detect the RIE-induced damage existing near the surface region, special device structures consisting of p+n diode arrays are used. It is found that the dominant deep levels produced by RIE are four hole traps. One level at Ev+0.40 eV exhibits the Poole-Frenkel effect, from which it is identified as an acceptor. Another level at Ev+0.46 eV is deduced to be an interstitial iron level from the emission rate. There is a strong decrease in the deep level concentrations upon annealing above 500°C. However, the deep levels do not completely disappear upon annealing at high temperatures. The deep level concentrations correlate well with the current-voltage characteristics of the devices.

  19. Solution-route low-temperature fabrication of thin-film p-n junctions

    NASA Astrophysics Data System (ADS)

    Panamá, Gustavo; Ayag, Kevin; Kim, Hongdoo

    2016-11-01

    In this work, p-n junctions were fabricated at low temperature by means of UV-assisted thermal annealing. At 200 °C, remarkable rectifying and optical properties were observed due to the conversion of the sol-gel precursors to oxide films, which was aided by UV exposure. The resulting p-NiO/n-ZnO structures are featured as the thinnest ever reported (≈55 nm) based on a solution process with a large forward electrical current 10 -2 -10 -1 A cm-2 and the lowest leakage current (1 μA cm-2). UV light and precursor solution engineering contributed to form metal-oxide bonding at relatively low temperature in ambient conditions. The heterojunctions fabricated by the proper combination of these alternatives and simple processes were evaluated using UV-vis and FT-IR spectroscopy, FE-SEM, AFM, XRD, XPS, and I-V curves.

  20. Electrochemical characterization of p(+)n and n(+)p diffused InP structures

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Faur, Maria; Faur, Mircea; Goradia, M.; Vargas-Aburto, Carlos

    1993-01-01

    The relatively well documented and widely used electrolytes for characterization and processing of Si and GaAs-related materials and structures by electrochemical methods are of little or no use with InP because the electrolytes presently used either dissolve the surface preferentially at the defect areas or form residual oxides and introduce a large density of surface states. Using an electrolyte which was newly developed for anodic dissolution of InP, and was named the 'FAP' electrolyte, accurate characterization of InP related structures including nature and density of surface states, defect density, and net majority carrier concentration, all as functions of depth was performed. A step-by-step optimization of n(+)p and p(+)n InP structures made by thermal diffusion was done using the electrochemical techniques, and resulted in high performance homojunction InP structures.

  1. Current induced decomposition of Abrikosov vortices in p-n layered superconductors and heterostructures.

    PubMed

    Rakhmanov, A L; Savel'ev, Sergey; Kusmartsev, F V

    2008-11-07

    We describe the decomposition of Abrikosov vortices into decoupled pancake vortices in superconductors having both electron and hole charge carriers. We estimate the critical current of such a decomposition, at which a superconducting-normal state transition occurs, and find that it is very sensitive to the magnetic field and temperature. The effect can be observed in recently synthesized self-doped high-Tc layered superconductors with electrons and holes coexisting in different Cu-O planes and in artificial p-n superconductor heterostructures. The sensitivity of the critical current to a magnetic field may be used for sensors and detectors of a magnetic field, which can be built up from the superconductor heterostructures.

  2. Current Induced Decomposition of Abrikosov Vortices in p-n Layered Superconductors and Heterostructures

    NASA Astrophysics Data System (ADS)

    Rakhmanov, A. L.; Savel'Ev, Sergey; Kusmartsev, F. V.

    2008-11-01

    We describe the decomposition of Abrikosov vortices into decoupled pancake vortices in superconductors having both electron and hole charge carriers. We estimate the critical current of such a decomposition, at which a superconducting-normal state transition occurs, and find that it is very sensitive to the magnetic field and temperature. The effect can be observed in recently synthesized self-doped high-Tc layered superconductors with electrons and holes coexisting in different Cu-O planes and in artificial p-n superconductor heterostructures. The sensitivity of the critical current to a magnetic field may be used for sensors and detectors of a magnetic field, which can be built up from the superconductor heterostructures.

  3. Gate-tunable electron focusing across graphene p-n junction

    NASA Astrophysics Data System (ADS)

    Chen, Shaowen; Han, Zheng; Wang, Lei; Dean, Cory; Hone, James

    Electrons moving across a ballistic semiconductor junction experience a change in trajectory described by an electronic version of Snell's law. In the case of a barrier separating regions of n and ptype carriers, negative refraction is expected, which theoretically leads to a Veselago type of electron focusing. Being a ballistic bipolar 2D system, hexagonal Boron Nitride-encapsulated graphene is expected to be a model a system to realize this effect, however, robust demonstration of veselago lensing has remained limited. We describe novel methods to fabricate high quality graphene p-n junctions with atomically sharp boundaries. Using a magnetic focusing measurement scheme, we demonstrate unambiguous signatures of negative refraction in these devices. Our observations are in good agreement with simulations and shed light on future application for electronic optics in ballistic graphene.

  4. Measurement of the Induced Proton Polarization Pn in the 12C(e, e', p) reaction

    SciTech Connect

    Woo, R J; Barkhuff, David; Bertozzi, William; Chen, Jian-ping; Dale, Dan; Dodson, G; Dow, K A; Epstein, Marty; Farkhondeh, Manouchehr; Finn, Mike; Gilad, Shalev; Jones, Mark K; Joo, Kyungseon; Kelly, James; Kowalski, Stanley; Lourie, Bob; Madey, Richard; Margaziotis, Dimitri; Markowitz, Pete; McIntyre, Justin; Mertz, Christoph; Milbrath, Brian; Mitchell, Joseph; Perdrisat, Charles F; Punjabi, Vina; Rutt, Paul; Sarty, Adam; Tieger, D; Tschalaer, C; Turchinetz, William; Ulmer, Paul E; Van Verst, S P; Vellidis, C; Warren, Glen; Weinstein, Lawrence

    1998-01-19

    The first measurements of the induced proton polarization Pn for the 12C(e,e',p) reaction are reported. The experiment was performed at quasifree kinematics for energy and momentum transfer (w,q) = (294 MeV, 765 MeV/c) and sampled a missing momentum range of 0-250 MeV/c. The induced polarization arises from final-state interactions and for these kinematics is dominated by the real part of the spin-orbit optical potential. The distorted-wave impulse approximation provides good agreement with data for the 1 p3/2 shell. The data for the continuum suggest that both the 1s1/2 shell and underlying l > 1 configurations contribute.

  5. CMOS buried quad p-n junction photodetector for multi-wavelength analysis.

    PubMed

    Richard, Charles; Courcier, Thierry; Pittet, Patrick; Martel, Stéphane; Ouellet, Luc; Lu, Guo-Neng; Aimez, Vincent; Charette, Paul G

    2012-01-30

    This paper presents a buried quad p-n junction (BQJ) photodetector fabricated with a HV (high-voltage) CMOS process. Multiple buried junction photodetectors are wavelength-sensitive devices developed for spectral analysis applications where a compact integrated solution is preferred over systems involving bulk optics or a spectrometer due to physical size limitations. The BQJ device presented here is designed for chip-based biochemical analyses using simultaneous fluorescence labeling of multiple analytes such as with advanced labs-on-chip or miniaturized photonics-based biosensors. Modeling and experimental measurements of the spectral response of the device are presented. A matrix-based method for estimating individual spectral components in a compound spectrum is described. The device and analysis method are validated via a test setup using individually modulated LEDs to simulate light from 4-component fluorescence emission.

  6. Thermal Stability of Cu/NiSi-Contacted p+n Shallow Junction

    NASA Astrophysics Data System (ADS)

    Wang, Chao-Chun; Lin, Hsin-Hung; Chen, Mao-Chieh

    2004-09-01

    The thermal stability of Cu/NiSi-contacted p+n shallow junction diodes was investigated with respect to their electrical characteristics and metallurgical reactions. The TaN/Cu/NiSi/p+n junction diode remained intact after 30 min thermal annealing at temperatures of up to 350°C. Upon annealing at 375°C, a marked increase in reverse bias leakage current occurred, and secondary ion mass spectrometry (SIMS) analysis indicated that Cu started to penetrate into the NiSi-contacted shallow junction region. After a higher temperature annealing at 425°C, a Cu3Si phase was formed. The failure of the TaN/Cu/NiSi/p+n junction diodes is attributed to the penetration of Cu through the NiSi layer into the junction region, leading to junction degradation by introducing deep-level trap states and the eventual formation of Cu3Si.

  7. A crust and upper mantle model of Eurasia and North Africa for Pn travel time calculation

    SciTech Connect

    Myers, S; Begnaud, M; Ballard, S; Pasyanos, M; Phillips, W S; Ramirez, A; Antolik, M; Hutchenson, K; Dwyer, J; Rowe, C; Wagner, G

    2009-03-19

    We develop a Regional Seismic Travel Time (RSTT) model and methods to account for the first-order effect of the three-dimensional crust and upper mantle on travel times. The model parameterization is a global tessellation of nodes with a velocity profile at each node. Interpolation of the velocity profiles generates a 3-dimensional crust and laterally variable upper mantle velocity. The upper mantle velocity profile at each node is represented as a linear velocity gradient, which enables travel time computation in approximately 1 millisecond. This computational speed allows the model to be used in routine analyses in operational monitoring systems. We refine the model using a tomographic formulation that adjusts the average crustal velocity, mantle velocity at the Moho, and the mantle velocity gradient at each node. While the RSTT model is inherently global and our ultimate goal is to produce a model that provides accurate travel time predictions over the globe, our first RSTT tomography effort covers Eurasia and North Africa, where we have compiled a data set of approximately 600,000 Pn arrivals that provide path coverage over this vast area. Ten percent of the tomography data are randomly selected and set aside for testing purposes. Travel time residual variance for the validation data is reduced by 32%. Based on a geographically distributed set of validation events with epicenter accuracy of 5 km or better, epicenter error using 16 Pn arrivals is reduced by 46% from 17.3 km (ak135 model) to 9.3 km after tomography. Relative to the ak135 model, the median uncertainty ellipse area is reduced by 68% from 3070 km{sup 2} to 994 km{sup 2}, and the number of ellipses with area less than 1000 km{sup 2}, which is the area allowed for onsite inspection under the Comprehensive Nuclear Test Ban Treaty, is increased from 0% to 51%.

  8. Design of a Miniaturized Langmuir Plasma Probe for the QuadSat/PnP

    NASA Astrophysics Data System (ADS)

    Landavazo, M.; Jorgensen, A. M.; Del Barga, C.; Ferguson, D.; Guillette, D.; Huynh, A.; Klepper, J.; Kuker, J.; Lyke, J. C.; Marohn, B.; Mason, J.; Quiroga, J.; Ravindran, V.; Yelton, C.; Zagrai, A. N.; Zufelt, B.

    2011-12-01

    We have developed a miniaturized Langmuir plasma probe for measuring plasma density in low-earth orbit. Measuring plasma density in the upper ionosphere is important as a diagnostic for the rest of the ionosphere and as an input to space weather forecasting models. Developing miniaturized instrumentation allows easier deployment of a large number of small satellites for monitoring space weather. Our instrument was designed for the Swedish QuadSat/PnP, with the following constraints: A volume constraint of 5x5x1.25cm for the electronics enclosure, a mass budget 100 g, and a power budget of 0.5 W. We met the volume and mass constraints and where able to use less power than budgeted, only 0.25 W. We designed the probe for a bias range of +/-15V and current measurements in the 1 nA to 1 mA range (6 orders of magnitude). Necessary voltage of +/- 15 V and 3.3 V were generated on-board from a single 5 V supply. The electronics suite is based off carefully selected yet affordable commercial components that exhibit low noise, low leakage currents and low power consumption. Size constraints, low noise and low leakage requirements called for a carefully designed four layer PCB with a properly guarded current path using surface mount components on both sides. An ultra-low power microcontroller handles instrument functionality and is fully controllable over i2c using SPA-1 space plug and play. We elected for a probe launched deployed, which required careful design to survive launch vibrations while staying within the mass budget. The QuadSat/PnP has not been launched at the time of writing. We will present details of the instrument design and initial calibration data.

  9. The effect of PN-1, a Traditional Chinese Prescription, on the Learning and Memory in a Transgenic Mouse Model of Alzheimer's Disease

    PubMed Central

    Yao, Zhi-Gang; Zhang, Ling; Liang, Liang; Liu, Yu; Yang, Ya-Jun; Huang, Lan; Zhu, Hua; Ma, Chun-Mei; Qin, Chuan

    2013-01-01

    Traditional Chinese Medicine (TCM) is a complete medical system that has been practiced for more than 3000 years. Prescription number 1 (PN-1) consists of several Chinese medicines and is designed according to TCM theories to treat patients with neuropsychiatric disorders. The evidence of clinical practice suggests the benefit effects of PN-1 on cognitive deficits of dementia patients. We try to prove and explain this by using contemporary methodology and transgenic animal models of Alzheimer's disease (AD). The behavioral studies were developed to evaluate the memory of transgenic animals after intragastric administration of PN-1 for 3 months. Amyloid beta-protein (Aβ) neuropathology was quantified using immunohistochemistry and ELISA. The western blotting was used to detect the levels of plasticity associated proteins. The safety of PN-1 on mice was also assessed through multiple parameters. Results showed that PN-1 could effectively relieve learning and memory impairment of transgenic animals. Possible mechanisms showed that PN-1 could significantly reduce plaque burden and Aβ levels and boost synaptic plasticity. Our observations showed that PN-1 could improve learning and memory ability through multiple mechanisms without detectable side effects on mice. We propose that PN-1 is a promising alternative treatment for AD in the future. PMID:23476695

  10. Transport Properties of p-n Junctions Formed in Boron/Nitrogen Doped Carbon Nanotubes and Graphene Nanoribbons

    NASA Astrophysics Data System (ADS)

    Hammouri, Mahmoud; Vasiliev, Igor

    2014-03-01

    We apply ab initio computational methods based on density functional theory to study the transport properties of p-n junctions made of single-walled carbon nanotubes and graphene nanoribbons. The p-n junctions are formed by doping the opposite ends of carbon nanostructures with boron and nitrogen atoms. Our calculations are carried out using the SIESTA electronic structure code combined with the generalized gradient approximation for the exchange-correlation functional. The transport properties are calculated using a self-consistent nonequilibrium Green's function method implemented in the TranSIESTA package. The modeled nanoscale p-n junctions exhibit linear I-V characteristics in the forward bias and nonlinear I-V characteristics with a negative differential resistance in the reverse bias. The computed transmission spectra and the I-V characteristics of the p-n junctions are compared to the results of other theoretical studies and to the available experimental data. Supported by NMSU GREG Award and by NSF CHE-1112388.

  11. Negative differential resistance observed from vertical p+-n+ junction device with two-dimensional black phosphorous

    NASA Astrophysics Data System (ADS)

    Lee, Daeyeong; Jang, Young Dae; Kweon, Jaehwan; Ryu, Jungjin; Hwang, Euyheon; Yoo, Won Jong; Samsung-SKKU Graphene/2D Center (SSGC) Collaboration

    A vertical p+-n+ homojunction was fabricated by using black phosphorus (BP) as a van der Waals two-dimensional (2D) material. The top and bottom layers of the materials were doped by chemical dopants of gold chloride (AuCl3) for p-type doping and benzyl viologen (BV) for n-type doping. The negative differential resistance (NDR) effect was clearly observed from the output curves of the fabricated BP vertical devices. The thickness range of the 2D material showing NDR and the peak to valley current ratio of NDR are found to be strongly dependent on doping condition, gate voltage, and BP's degradation level. Furthermore, the carrier transport of the p+-n+ junction was simulated by using density functional theory (DFT) and non-equilibrium Green's function (NEGF). Both the experimental and simulation results confirmed that the NDR is attributed to the band-to-band tunneling (BTBT) across the 2D BP p+-n+ junction, and further quantitative details on the carrier transport in the vertical p+-n+ junction devices were explored, according to the analyses of the measured transfer curves and the DFT simulation results. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2013R1A2A2A01015516).

  12. Organic/inorganic hybrid pn-junction between copper phthalocyanine and CdSe quantum dot layers as solar cells

    NASA Astrophysics Data System (ADS)

    Saha, Sudip K.; Guchhait, Asim; Pal, Amlan J.

    2012-08-01

    We have introduced an organic/inorganic hybrid pn-junction for solar cell applications. Layers of II-VI quantum dots and a metal-phthalocyanine in sequence have been used as n- and p-type materials, respectively, to form a junction. The film of quantum dots has been formed through a layer-by-layer process by replacing the long-chain ligands of the nanoparticles in each ultrathin layer or a monolayer with short-chain ones so that interparticle distance becomes small leading to a decrease in resistance of the quantum dot layer. With indium tin oxide and Au as electrodes, we have formed an inverted sandwiched structure. These electrodes formed ohmic contacts with the neighboring materials. From the current-voltage characteristics of the hybrid heterostructure, we have inferred formation of a depletion region at the pn-junction that played a key role in charge separation and correspondingly a photocurrent in the external circuit. For comparison, we have also formed and characterized Schottky devices based on components of the pn-junction keeping the electrode combination same. From capacitance-voltage characteristics, we have observed that the depletion region of the hybrid pn-junction was much wider as compared to that in Schottky devices based on components of the junction.

  13. Semiconducting ZnSnN2 thin films for Si/ZnSnN2 p-n junctions

    NASA Astrophysics Data System (ADS)

    Qin, Ruifeng; Cao, Hongtao; Liang, Lingyan; Xie, Yufang; Zhuge, Fei; Zhang, Hongliang; Gao, Junhua; Javaid, Kashif; Liu, Caichi; Sun, Weizhong

    2016-04-01

    ZnSnN2 is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN2 films with a low electron concentration, in order to promote the applications of ZnSnN2 as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN2 films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN2 p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 1017 to 6.78 × 1017 cm-3 and from 0.37 to 2.07 cm2 V-1 s-1, corresponding to the annealing temperature from 200 to 350 °C. After annealing at 300 °C, the p-n junction exhibited the optimum rectifying characteristics, with a forward-to-reverse ratio over 103. The achievement of this ZnSnN2-based p-n junction makes an opening step forward to realize the practical application of the ZnSnN2 material. In addition, the nonideal behaviors of the p-n junctions under both positive and negative voltages are discussed, in hope of suggesting some ideas to further improve the rectifying characteristics.

  14. Significant runoff exports of particulate nitrogen (PN) with large tropical storms: Implications of climate variability for watersheds and aquatic ecosystems

    NASA Astrophysics Data System (ADS)

    Inamdar, S. P.; Dhillon, G.

    2014-12-01

    Nitrogen (N) is an important nutrient that contributes to eutrophication of water bodies and plays a key role in various terrestrial and aquatic ecosystem processes. Thus, understanding the amounts and timing of N inputs from watersheds to aquatic ecosystems is critical. Most research to date has focused on the dissolved forms (< 0.45 micron) of N such as nitrate-N and organic N, which constitute a major portion of the N flux during baseflow and small to moderate storm events. The amounts of particulate N (PN > 0.45 micron) in runoff, can however, increase dramatically with large storms such as those associated with tropical depressions and hurricanes and can have a lasting impact on downstream aquatic systems. We determined the exports and storm-event patterns of PN for two (12 and 79 ha) intensively instrumented, headwater, forested, catchments located in the Piedmont Region of Maryland. Stream runoff sampling has been performed for baseflow and storm events since 2011 and has included numerous large tropical storms including Irene (2011) and Sandy (2012). Key questions that we address are: How significant is the PN flux, i.e., what proportion of the annual N is exported as PN during the large tropical events? How does PN export vary with storm magnitude? How do PN exports change with catchment scale? What are the temporal patterns of dissolved and particulate N species during the largest storms? Observations for tropical storm Irene (2011) revealed that in just 59 hours this storm contributed to one-third of the annual (2011) N flux from the 12 ha watershed and 87% of this N was in particulate form. A large portion of this particulate N is likely deposited in the fluvial network, especially in headwater reaches, and could potentially become bioavailable. Understanding these contributions from large events is especially important considering that climate-change scenarios indicate increased intensity of hurricanes and tropical storms and thus potentially a greater

  15. High affinity specific (/sup 3/H)(/sup +/)PN 200-110 binding to dihydropyridine receptors associated with calcium channels in rat cerebral cortex and heart

    SciTech Connect

    Lee, H.R.; Roeske, W.R.; Yamamura, H.I.

    1984-08-13

    The binding properties of the 1,4-dihydropyridine calcium channel antagonist, (/sup 3/H)(/sup +/)PN 200-110, were studied in rat cerebral cortical and cardiac homogenates (37/sup 0/C, Krebs phosphate buffer). Specific binding of (/sup 3/H)(/sup +/)PN 200-110 was saturable, reversible, and of high affinity (K/sub d/ values are 35 and 64 pM for the cerebral cortex and heart, respectively). In parallel studies with (/sup 3/H)(/sup +/)PN 200-110, the dissocation constant of (/sup 3/H)nitrendipine was 10-12 times higher. Substituted dihydropyridine calcium channel antagonists and agonists competively inhibited specific (/sup 3/H)(/sup +/)PN 200-110 binding, but d-cis diltiazem enhanced and verapamil incompletely inhibited (/sup 3/H)(/sup +/)PN 200-110 binding in both the cerebral cortex and the heart. The effects of diltiazem and verapamil on

  16. Preparation, characterization and activity evaluation of p-n junction photocatalyst p-ZnO/n-TiO 2

    NASA Astrophysics Data System (ADS)

    Chen, Shifu; Zhao, Wei; Liu, Wei; Zhang, Sujuan

    2008-12-01

    In this paper, p-type ZnO powder was prepared by decomposition of zinc nitrate at 350 °C for 1 h. p-n junction photocatalyst p-ZnO/TiO 2 was prepared by ball milling of TiO 2 in H 2O solution doped with p-ZnO. The p-n junction photocatalyst p-ZnO/TiO 2 was characterized by UV-vis diffuse reflection spectrum, scanning electron microscopy (SEM), X-ray powder diffraction (XRD) and the fluorescence emission spectra. The photocatalytic activity of the photocatalyst was evaluated by photocatalytic reduction of Cr 2O 72- and photocatalytic oxidation of methyl orange (MO). The results showed that the photocatalytic activity of the p-n junction p-ZnO/TiO 2 is much higher than that of TiO 2 on the photocatalytic reduction of Cr 2O 72-. However, the photocatalytic activity of the photocatalyst is much lower than that of TiO 2 on the photocatalytic oxidation of methyl orange. Namely, the p-n junction photocatalyst p-ZnO/TiO 2 has higher photocatalytic reduction activity, but lower photocatalytic oxidation activity. When the amounts of doped p-ZnO are 0.0 and 2.0 wt.%, illumination for 20 min, the photoreduction efficiencies are 15.7 and 42.8%, and the photooxidation efficiencies are 68.1 and 26.1%, respectively. Effect of ball milling time on the photocatalytic activity of the photocatalyst was also investigated. The mechanisms of influence on the photocatalytic activity were also discussed by the p-n junction principle.

  17. Physical Properties of the Very Young PN Hen3-1357 (Stingray Nebula) Based on Multiwavelength Observations

    NASA Astrophysics Data System (ADS)

    Otsuka, Masaaki; Parthasarathy, M.; Tajitsu, A.; Hubrig, S.

    2017-03-01

    We carried out a detailed analysis of the interesting and important very young planetary nebula (PN) Hen3-1357 (Stingray Nebula) based on a unique data set of optical to far-IR spectra and photometric images. We calculated the abundances of nine elements using collisionally excited lines (CELs) and recombination lines (RLs). The RL C/O ratio indicates that this PN is O-rich, which is also supported by the detection of the broad 9/18 μm bands from amorphous silicate grains. The observed elemental abundances can be explained by asymptotic giant branch (AGB) nucleosynthesis models for initially 1–1.5 M ⊙ stars with Z = 0.008. The Ne overabundance might be due to the enhancement of 22Ne isotope in the He-rich intershell. Using the spectrum of the central star synthesized by Tlusty as the ionization/heating source of the PN, we constructed the self-consistent photoionization model with Cloudy to the observed quantities and derived the gas and dust masses, dust-to-gas mass ratio, and core mass of the central star. About 80% of the total dust mass is from warm–cold dust component beyond ionization front. Comparison with other Galactic PNe indicates that Hen3-1357 is an ordinary amorphous silicate-rich and O-rich gas PN. Among other studied PNe, IC4846 shows many similarities in properties of the PN to Hen3-1357, although their post-AGB evolution is quite different from each other. Further monitoring of observations and comparisons with other PNe such as IC4846 are necessary to understand the evolution of Hen3-1357.

  18. Metallic properties of Ba{sub 2}Cu{sub 3}P{sub 4} and BaCu{sub 2}Pn{sub 2} (Pn=As, Sb)

    SciTech Connect

    Saparov, Bayrammurad; Sefat, Athena S.

    2012-07-15

    We report the synthesis of ternary barium copper pnictides, Ba{sub 2}Cu{sub 3}P{sub 4} and BaCu{sub 2}Pn{sub 2} (Pn=As, Sb), and their structural, magnetic, and transport properties. They all crystallize in different structures shown by X-ray diffraction, although their structures reveal close relations. The body-centered tetragonal BaCu{sub 2}As{sub 2} adopts ThCr{sub 2}Si{sub 2}-type (I4/mmm) structure, whereas Ba{sub 2}Cu{sub 3}P{sub 4} is a copper-deficient derivative of this phase, crystallizing in the body-centered orthorhombic space group, Ibam. There are two polymorphs of BaCu{sub 2}Sb{sub 2}: {alpha}-BaCu{sub 2}Sb{sub 2} that adopts CaBe{sub 2}Ge{sub 2}-type structure; {beta}-BaCu{sub 2}Sb{sub 2} that is a 2:1 combination of CaBe{sub 2}Ge{sub 2}- and ThCr{sub 2}Si{sub 2}-type structural segments. All phases are metallic and non-magnetic. The room temperature thermal conductivity for polycrystalline BaCu{sub 2}As{sub 2} is Almost-Equal-To 2 W/(m K) and the Seebeck coefficient is Almost-Equal-To 15 {mu}V/K, which result in a small ( Almost-Equal-To 0.03) thermoelectric figure of merit. - Graphical abstract: Ternary copper pnictides of barium Ba{sub 2}Cu{sub 3}P{sub 4} and BaCu{sub 2}Pn{sub 2} (Pn=As, Sb) show metallic and non-magnetic behavior. Highlights: Black-Right-Pointing-Pointer Synthesis of Ba{sub 2}Cu{sub 3}P{sub 4} and BaCu{sub 2}Pn{sub 2} (Pn=As, Sb). Black-Right-Pointing-Pointer A new form of BaCu{sub 2}Sb{sub 2} (CaBe{sub 2}Ge{sub 2}-type) obtained and characterized. Black-Right-Pointing-Pointer The phases are metallic and non-magnetic in agreement with theory. Black-Right-Pointing-Pointer The thermal conductivity and Seebeck coefficient of BaCu{sub 2}As{sub 2} are quite low.

  19. Drilling ban yields verdict

    SciTech Connect

    Nation, L.M.

    1992-01-01

    This paper briefly reviews a lawsuit which is under appeal by the State of Michigan regarding a takings claim filed over a petroleum exploration site. The dispute arose as a result of a 1987 decision by the Michigan Department of Natural Resources forbidding the property owners from developing the mineral rights leased to Miller Brothers in the Huron/Manistee National Forest. This area is bisected by a trend of Silurian Niagaran reef complexes which has a known production history throughout the State. The dunes area of the national forest has been deemed a wilderness area. As a result of the State's decision, the courts have awarded a sum of 71 million dollars to the developer to cover damages and lost resources. The reserve estimates were taken from adjacent areas which showed that the Niagaran reefs are relatively consistent in their yield.

  20. Response of SOM Decomposition to Anthropogenic N Deposition: Simulations From the PnET-SOM Model.

    NASA Astrophysics Data System (ADS)

    Tonitto, C.; Goodale, C. L.; Ollinger, S. V.; Jenkins, J. P.

    2008-12-01

    Anthropogenic forcing of the C and N cycles has caused rapid change in atmospheric CO2 and N deposition, with complex and uncertain effects on forest C and N balance. With some exceptions, models of forest ecosystem response to anthropogenic perturbation have historically focused more on aboveground than belowground processes; the complexity of soil organic matter (SOM) is often represented with abstract or incomplete SOM pools, and remains difficult to quantify. We developed a model of SOM dynamics in northern hardwood forests with explicit feedbacks between C and N cycles. The soil model is linked to the aboveground dynamics of the PnET model to form PnET-SOM. The SOM model includes: 1) physically measurable SOM pools, including humic and mineral-associated SOM in O, A, and B soil horizons, 2) empirical soil turnover times based on 14C data, 3) alternative SOM decomposition algorithms with and without explicit microbial processing, and 4) soluble element transport explicitly linked to the hydrologic cycle. We tested model sensitivity to changes in litter decomposition rate (k) and completeness of decomposition (limit value) by altering these parameters based on experimental observations from long-term litter decomposition experiments with N fertilization treatments. After a 100 year simulation, the Oe+Oa horizon SOC pool was reduced by 15 % and the A-horizon humified SOC was reduced by 7 % for N deposition scenarios relative to forests without N fertilization. In contrast, predictions for slower time-scale pools showed negligible variation in response to variation in the limit values tested, with A-horizon mineral SOC pools reduced by < 3 % and B-horizon mineral SOC reduced by 0.1 % for N deposition scenarios relative to forests without N fertilization. The model was also used to test the effect of varying initial litter decomposition rate to simulate response to N deposition. In contrast to the effect of varying limit values, simulations in which only k

  1. The physics and kinematics of the evolved, interacting planetary nebula PN G342.0-01.7

    NASA Astrophysics Data System (ADS)

    Ali, A.; Amer, M. A.; Dopita, M. A.; Vogt, F. P. A.; Basurah, H. M.

    2015-11-01

    Integral field spectroscopy has been obtained for very few evolved planetary nebulae (PNe). Here we aim to study the physical and kinematical characteristics of the unstudied old planetary nebula PN G342.0-01.7, which shows evidence of interaction with its surrounding interstellar medium. We used integral field spectra from the Wide Field Spectrograph on the ANU 2.3 m telescope to provide spectroscopy across the whole object covering the spectral range 3400-7000 Å. We formed narrow-band images to investigate the excitation structure. The spectral analysis shows that the object is a distant Peimbert Type I planetary nebula (PN) of low excitation, formally of excitation class of 0.5. The low electron density, high dynamical age, and low surface brightness of the object confirm that it is observed fairly late in its evolution. It shows clear evidence for dredge-up of CN-processed material characteristic of its class. In addition, the low peculiar velocity of 7 km s-1 shows it to be a member of the young disk component of our Galaxy. We further determined an average expansion velocity of Vexp = 20.2 ± 1.3 km s-1, a local standard of rest radial velocity RVLSR = -27.7 ± 1.7 km s-1, and a distance of 2.06 ± 0.6 kpc for the object. We built a self-consistent photoionisation model for the PN matching the observed spectrum, the Hβ luminosity, and the diameter. On the basis of this we derive an effective temperature log Teff ~ 5.05 and luminosity 1.85 < log L< 2.25. The temperature is much higher than might have been expected using the excitation class, proving that this can be misleading in classifying evolved PNe. PN G342.0-01.7 is in interaction with its surrounding interstellar medium through which the object is moving in the south-west direction. This interaction drives a slow shock into the outer PN ejecta. A shock model suggests that it only accounts for about 10% of the total luminosity, but has an important effect on the global spectrum of the PN.

  2. Carbon doping induced peculiar transport properties of boron nitride nanoribbons p-n junctions

    SciTech Connect

    Liu, N.; Gao, G. Y.; Zhu, S. C.; Ni, Y.; Wang, S. L.; Yao, K. L.; Liu, J. B.

    2014-07-14

    By applying nonequilibrium Green's function combined with density functional theory, we investigate the electronic transport properties of carbon-doped p-n nanojunction based on hexagonal boron nitride armchair nanoribbons. The calculated I-V curves show that both the center and edge doping systems present obvious negative differential resistance (NDR) behavior and excellent rectifying effect. At low positive bias, the edge doping systems possess better NDR performance with larger peak-to-valley ratio (∼10{sup 5}), while at negative bias, the obtained peak-to-valley ratio for both of the edge and center doping systems can reach the order of 10{sup 7}. Meanwhile, center doping systems present better rectifying performance than the edge doping ones, and giant rectification ratio up to 10{sup 6} can be obtained in a wide bias range. These outstanding transport properties are explained by the evolution of the transmission spectra and band structures with applied bias, together with molecular projected self-consistent Hamiltonian eigenvalues and eigenstates.

  3. Method for forming p-n junctions and solar-cells by laser-beam processing

    DOEpatents

    Narayan, Jagdish; Young, Rosa T.

    1979-01-01

    This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 .mu.m, an energy area density of from about 1.0 to 2.0 J/cm.sup.2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 .mu.m. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.

  4. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

    SciTech Connect

    Osses-Márquez, Juan; Calderón-Muñoz, Williams R.

    2014-10-21

    The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

  5. New Aspects of Photocurrent Generation at Graphene pn Junctions Revealed by Ultrafast Optical Measurements

    NASA Astrophysics Data System (ADS)

    Aivazian, Grant; Sun, Dong; Jones, Aaron; Ross, Jason; Yao, Wang; Cobden, David; Xu, Xiaodong

    2012-02-01

    The remarkable electrical and optical properties of graphene make it a promising material for new optoelectronic applications. However, one important, but so far unexplored, property is the role of hot carriers in charge and energy transport at graphene interfaces. Here we investigate the photocurrent (PC) dynamics at a tunable graphene pn junction using ultrafast scanning PC microscopy. Pump-probe measurements show a temperature dependent relaxation time of photogenerated carriers that increases from 1.5ps at 290K to 4ps at 20K; while the amplitude of the PC is independent of the lattice temperature. These observations imply that it is hot carriers, not phonons, which dominate ultrafast energy transport. Gate dependent measurements show many interesting features such as pump induced saturation, enhancement, and sign reversal of probe generated PC. These observations reveal that the underlying PC mechanism is a combination of the thermoelectric and built-in electric field effects. Our results enhance the understanding of non-equilibrium electron dynamics, electron-electron interactions, and electron-phonon interactions in graphene. They also determine fundamental limits on ultrafast device operation speeds (˜500 GHz) for graphene-based photodetectors.

  6. Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions.

    PubMed

    Xu, Yang; Cheng, Cheng; Du, Sichao; Yang, Jianyi; Yu, Bin; Luo, Jack; Yin, Wenyan; Li, Erping; Dong, Shurong; Ye, Peide; Duan, Xiangfeng

    2016-05-24

    After a decade of intensive research on two-dimensional (2D) materials inspired by the discovery of graphene, the field of 2D electronics has reached a stage with booming materials and device architectures. However, the efficient integration of 2D functional layers with three-dimensional (3D) systems remains a significant challenge, limiting device performance and circuit design. In this review, we investigate the experimental efforts in interfacing 2D layers with 3D materials and analyze the properties of the heterojunctions formed between them. The contact resistivity of metal on graphene and related 2D materials deserves special attention, while the Schottky junctions formed between metal/2D semiconductor or graphene/3D semiconductor call for careful reconsideration of the physical models describing the junction behavior. The combination of 2D and 3D semiconductors presents a form of p-n junctions that have just marked their debut. For each type of the heterojunctions, the potential applications are reviewed briefly.

  7. Unusual Carbonaceous Dust Distribution in PN G095.2+00.7

    NASA Astrophysics Data System (ADS)

    Ohsawa, Ryou; Onaka, Takashi; Sakon, Itsuki; Mori, Tamami I.; Miyata, Takashi; Asano, Kentaro; Matsuura, Mikako; Kaneda, Hidehiro

    2012-12-01

    We investigate the polycyclic aromatic hydrocarbon (PAH) features in the young Galactic planetary nebula PN G095.2+00.7 based on mid-infrared observations. The near- to mid-infrared spectra obtained with the AKARI/IRC and the Spitzer/IRS show the PAH features as well as the broad emission feature at 12 μm usually seen in proto-planetary nebulae (pPNe). The spatially resolved spectra obtained with Subaru/COMICS suggest that the broad emission around 12 μm is distributed in a shell-like structure, but the unidentified infrared band at 11.3 μm is selectively enhanced at the southern part of the nebula. The variation can be explained by a difference in the amount of the UV radiation to excite PAHs, and does not necessarily require the chemical processing of dust grains and PAHs. It suggests that the UV self-extinction is important to understand the mid-infrared spectral features. We propose a mechanism which accounts for the evolutionary sequence of the mid-infrared dust features seen in a transition from pPNe to PNe. Based in part on data collected at Subaru Telescope, which is operated by the National Astronomical Observatory of Japan.

  8. pn-junction delineation in Si devices using scanning capacitance spectroscopy

    NASA Astrophysics Data System (ADS)

    Edwards, Hal; Ukraintsev, Vladimir A.; San Martin, Richard; Johnson, F. Scott; Menz, Philip; Walsh, Shawn; Ashburn, Stan; Wills, K. Scott; Harvey, Ken; Chang, Mi-Chang

    2000-02-01

    The scanning capacitance microscope (SCM) is a carrier-sensitive imaging tool based upon the well-known scanning-probe microscope (SPM). As reported in Edwards et al. [Appl. Phys. Lett. 72, 698 (1998)], scanning capacitance spectroscopy (SCS) is a new data-taking method employing an SCM. SCS produces a two-dimensional map of the electrical pn junctions in a Si device and also provides an estimate of the depletion width. In this article, we report a series of microelectronics applications of SCS in which we image submicron transistors, Si bipolar transistors, and shallow-trench isolation structures. We describe two failure-analysis applications involving submicron transistors and shallow-trench isolation. We show a process-development application in which SCS provides microscopic evidence of the physical origins of the narrow-emitter effect in Si bipolar transistors. We image the depletion width in a Si bipolar transistor to explain an electric field-induced hot-carrier reliability failure. We show two sample geometries that can be used to examine different device properties.

  9. Comparison of Ge, InGaAs p-n junction solar cell

    NASA Astrophysics Data System (ADS)

    Korun, M.; Navruz, T. S.

    2016-04-01

    In this paper, the effect of material parameters on the efficiency of Ge and InGaAs p-n junction solar cells which are most commonly used as the sub-cell of multi-junction solar cells are investigated and the results due to these two cells are compared. The efficiency of Ge (EG =0.67 eV) solar cell which is easy to manufacture and inexpensive in cost, is compared with the efficiency of InGaAs (EG =0.74 eV) solar cell which is coming with drawback of high production difficulties and cost. The theoretical efficiency limit of Ge and InGaAs solar cells with optimum thickness were determined by using detailed balance model under one sun AM1.5 illumination. Since the band gap values of two cells are close to each other, approximate detailed balance efficiency limits of 16% for InGaAs and 14% for Ge are obtained. When drift-diffusion model is used and the thicknesses and doping concentrations are optimized, the maximum efficiency values are calculated as 13% for InGaAs and 9% for Ge solar cell. For each solar cell external quantum efficiency curves due to wavelength are also sketched and compared.

  10. Carrier phase recovery performance for PN-spread TDRSS link with radio-frequency interference

    NASA Technical Reports Server (NTRS)

    Mckenzie, T. M.; Braun, W. R.

    1979-01-01

    The carrier-phase recovery performance of a Costas loop for a nonlinear satellite channel with uplink and downlink noise is analyzed, and the extension of these results to the case where uplink radio-frequency interference (RFI) is present is considered. The signal format here is binary phase-shift-keyed (BPSK) or unbalanced quaternary phase-shift-keyed (UQPSK), the signals being either the non-return-to-zero (NRZ) or biphase (Manchester) type. With UQPSK, at least one data stream must be PN-spread. The channel comprises additive white Gaussian noise (WGN), a wideband filter, a bandpass nonlinearity and more additive WGN. The RFI being considered is pulsed continuous-wave, pulsed WGN, or a combination of the two. It is noted that the Tracking and Data Relay Satellite System (TDRSS) will be subjected to RFI from certain locations, especially in the S-band of frequencies. The characteristics of this link are generalized to form the assumptions underlying this analysis. The analytical results given include the S-curve of the equivalent loop and the phase-error variance of the linearized loop.

  11. Organic nanowire/crystalline silicon p-n heterojunctions for high-sensitivity, broadband photodetectors.

    PubMed

    Deng, Wei; Jie, Jiansheng; Shang, Qixun; Wang, Jincheng; Zhang, Xiujuan; Yao, Shenwen; Zhang, Qing; Zhang, Xiaohong

    2015-01-28

    Organic/inorganic hybrid devices are promising candidates for high-performance, low-cost optoelectronic devices, by virtue of their unique properties. Polycrystalline/amorphous organic films are widely used in hybrid devices, because defects in the films hamper the improvement of device performance. Here, we report the construction of 2,4-bis[4-(N,N-dimethylamino)phenyl]squaraine (SQ) nanowire (NW)/crystalline Si (c-Si) p-n heterojunctions. Thanks to the high crystal quality of the SQ NWs, the heterojunctions exhibit excellent diode characteristics in darkness. It is significant that the heterojunctions have been found to be capable of detecting broadband light with wavelengths spanning from ultraviolet (UV) light, to visible (Vis) light, to near-infrared (NIR) light, because of the complementary spectrum absorption of SQ NWs with Si. The junction is demonstrated to play a core role in enhancing the device performance, in terms of ultrahigh sensitivity, excellent stability, and fast response. The photovoltaic characteristics of the heterojunctions are further investigated, revealing a power conversion efficiency (PCE) of up to 1.17%. This result also proves the potential of the device as self-powered photodetectors operating at zero external bias voltage. This work presents an important advance in constructing single-crystal organic nanostructure/inorganic heterojunctions and will enable future exploration of their applications in broadband photodetectors and solar cells.

  12. A van der Waals pn heterojunction with organic/inorganic semiconductors

    SciTech Connect

    He, Daowei; Yang, Ziyi; Wu, Bing; Xu, Bingchen; Zhang, Yuhan; Li, Yun; Shi, Yi E-mail: xrwang@nju.edu.cn; Wang, Xinran E-mail: xrwang@nju.edu.cn; Pan, Yiming; Wang, Baigeng; Nan, Haiyan; Luo, Xiaoguang; Ni, Zhenhua; Gu, Shuai; Zhu, Jia; Chai, Yang

    2015-11-02

    van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate the hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C{sub 8}-BTBT) and n-type MoS{sub 2}. We find that few-layer C{sub 8}-BTBT molecular crystals can be grown on monolayer MoS{sub 2} by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C{sub 8}-BTBT/MoS{sub 2} vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling, and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 10{sup 5} at the room temperature. Our devices also exhibit photovoltaic responses with a power conversion efficiency of 0.31% and a photoresponsivity of 22 mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.

  13. Dynamic avalanche breakdown of a p-n junction: Deterministic triggering of a plane streamer front

    NASA Astrophysics Data System (ADS)

    Rodin, Pavel; Grekhov, Igor

    2005-06-01

    We discuss the dynamic impact ionization breakdown of a high voltage p-n junction which occurs when the electric field is increased above the threshold of avalanche impact ionization on a time scale smaller than the inverse thermogeneration rate. The avalanche-to-streamer transition characterized by generation of dense electron-hole plasma capable of screening the applied external electric field occurs in such regimes. We argue that the experimentally observed deterministic triggering of the plane streamer front at the electric-field strength above the threshold of avalanche impact ionization, yet below the threshold of band-to-band tunneling, is generally caused by field-enhanced ionization of deep-level centers. We suggest that the process-induced sulfur centers and native defects such as EL2, HB2, and HB5 centers initiate the front in Si and GaAs structures, respectively. In deep-level-free structures the plane streamer front is triggered by Zener band-to-band tunneling.

  14. UNUSUAL CARBONACEOUS DUST DISTRIBUTION IN PN G095.2+00.7

    SciTech Connect

    Ohsawa, Ryou; Onaka, Takashi; Sakon, Itsuki; Mori, Tamami I.; Miyata, Takashi; Asano, Kentaro; Matsuura, Mikako; Kaneda, Hidehiro

    2012-12-01

    We investigate the polycyclic aromatic hydrocarbon (PAH) features in the young Galactic planetary nebula PN G095.2+00.7 based on mid-infrared observations. The near- to mid-infrared spectra obtained with the AKARI/IRC and the Spitzer/IRS show the PAH features as well as the broad emission feature at 12 {mu}m usually seen in proto-planetary nebulae (pPNe). The spatially resolved spectra obtained with Subaru/COMICS suggest that the broad emission around 12 {mu}m is distributed in a shell-like structure, but the unidentified infrared band at 11.3 {mu}m is selectively enhanced at the southern part of the nebula. The variation can be explained by a difference in the amount of the UV radiation to excite PAHs, and does not necessarily require the chemical processing of dust grains and PAHs. It suggests that the UV self-extinction is important to understand the mid-infrared spectral features. We propose a mechanism which accounts for the evolutionary sequence of the mid-infrared dust features seen in a transition from pPNe to PNe.

  15. Nanostructured p-type CZTS thin films prepared by a facile solution process for 3D p-n junction solar cells.

    PubMed

    Park, Si-Nae; Sung, Shi-Joon; Sim, Jun-Hyoung; Yang, Kee-Jeong; Hwang, Dae-Kue; Kim, JunHo; Kim, Gee Yeong; Jo, William; Kim, Dae-Hwan; Kang, Jin-Kyu

    2015-07-07

    Nanoporous p-type semiconductor thin films prepared by a simple solution-based process with appropriate thermal treatment and three-dimensional (3D) p-n junction solar cells fabricated by depositing n-type semiconductor layers onto the nanoporous p-type thin films show considerable photovoltaic performance compared with conventional thin film p-n junction solar cells. Spin-coated p-type Cu2ZnSnS4 (CZTS) thin films prepared using metal chlorides and thiourea show unique nanoporous thin film morphology, which is composed of a cluster of CZTS nanograins of 50-500 nm, and the obvious 3D p-n junction structure is fabricated by the deposition of n-type CdS on the nanoporous CZTS thin films by chemical bath deposition. The photovoltaic properties of 3D p-n junction CZTS solar cells are predominantly affected by the scale of CZTS nanograins, which is easily controlled by the sulfurization temperature of CZTS precursor films. The scale of CZTS nanograins determines the minority carrier transportation within the 3D p-n junction between CZTS and CdS, which are closely related with the photocurrent of series resistance of 3D p-n junction solar cells. 3D p-n junction CZTS solar cells with nanograins below 100 nm show power conversion efficiency of 5.02%, which is comparable with conventional CZTS thin film solar cells.

  16. Yield enhancement with DFM

    NASA Astrophysics Data System (ADS)

    Paek, Seung Weon; Kang, Jae Hyun; Ha, Naya; Kim, Byung-Moo; Jang, Dae-Hyun; Jeon, Junsu; Kim, DaeWook; Chung, Kun Young; Yu, Sung-eun; Park, Joo Hyun; Bae, SangMin; Song, DongSup; Noh, WooYoung; Kim, YoungDuck; Song, HyunSeok; Choi, HungBok; Kim, Kee Sup; Choi, Kyu-Myung; Choi, Woonhyuk; Jeon, JoongWon; Lee, JinWoo; Kim, Ki-Su; Park, SeongHo; Chung, No-Young; Lee, KangDuck; Hong, YoungKi; Kim, BongSeok

    2012-03-01

    A set of design for manufacturing (DFM) techniques have been developed and applied to 45nm, 32nm and 28nm logic process technologies. A noble technology combined a number of potential confliction of DFM techniques into a comprehensive solution. These techniques work in three phases for design optimization and one phase for silicon diagnostics. In the DFM prevention phase, foundation IP such as standard cells, IO, and memory and P&R tech file are optimized. In the DFM solution phase, which happens during ECO step, auto fixing of process weak patterns and advanced RC extraction are performed. In the DFM polishing phase, post-layout tuning is done to improve manufacturability. DFM analysis enables prioritization of random and systematic failures. The DFM technique presented in this paper has been silicon-proven with three successful tape-outs in Samsung 32nm processes; about 5% improvement in yield was achieved without any notable side effects. Visual inspection of silicon also confirmed the positive effect of the DFM techniques.

  17. Shortcomings in wheat yield predictions

    NASA Astrophysics Data System (ADS)

    Semenov, Mikhail A.; Mitchell, Rowan A. C.; Whitmore, Andrew P.; Hawkesford, Malcolm J.; Parry, Martin A. J.; Shewry, Peter R.

    2012-06-01

    Predictions of a 40-140% increase in wheat yield by 2050, reported in the UK Climate Change Risk Assessment, are based on a simplistic approach that ignores key factors affecting yields and hence are seriously misleading.

  18. Nitric Oxide-Induced Vasorelaxation in Response to PnTx2-6 Toxin from Phoneutria nigriventer Spider in Rat Cavernosal Tissue

    PubMed Central

    Nunes, Kenia P.; Cordeiro, Marta N.; Richardson, Michael; Borges, Marcia N.; Diniz, Simone O.F.; Cardoso, Valbert N.; Tostes, Rita; De Lima, Maria Elena; Webb, Robert Clinton; Leite, Romulo

    2011-01-01

    Introduction Priapism is one of several symptoms observed in accidental bites by the spider Phoneutria nigriventer. The venom of this spider is comprised of many toxins, and the majority has been shown to affect excitable ion channels, mainly sodium (Na+) channels. It has been demonstrated that PnTx2-6, a peptide extracted from the venom of P. nigriventer, causes erection in anesthetized rats and mice. Aim We investigated the mechanism by which PnTx2-6 evokes relaxation in rat corpus cavernosum. Main Outcome Measures PnTx2-6 toxin potentiates nitric oxide (NO)-dependent cavernosal relaxation. Methods Rat cavernosal strips were incubated with bretylium (3 × 10−5 M) and contracted with phenylephrine (PE; 10−5 M). Relaxation responses were evoked by electrical field stimulation (EFS) or sodium nitroprusside (SNP) before and after 4 minutes of incubation with PnTx2-6 (10−8 M). The effect of PnTx2-6 on relaxation induced by EFS was also tested in the presence of atropine (10−6 M), a muscarinic receptor antagonist, N-type Ca2+ channel blockers (ω-conotoxin GVIA, 10−6 M) and sildenafil (3 × 10−8 M). Technetium99m radiolabeled PnTx2-6 subcutaneous injection was administrated in the penis. Results Whereas relaxation induced by SNP was not affected by PnTx2-6, EFS-induced relaxation was significantly potentiated by this toxin as well as PnTx2-6 plus SNP. This potentiating effect was further increased by sildenafil, not altered by atropine, however was completely blocked by the N-type Ca2+ channels. High concentrated levels of radiolabeled PnTx2-6 was specifically found in the cavernosum tissue, suggesting PnTx2-6 is an important toxin responsible for P. nigriventer spider accident-induced priapism. Conclusion We show that PnTx2-6 slows Na+ channels inactivation in nitrergic neurons, allowing Ca2+ influx to facilitate NO/cGMP signalling, which promotes increased NO production. In addition, this relaxation effect is independent of phosphodiesterase enzyme type 5

  19. Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3

    NASA Astrophysics Data System (ADS)

    Kim, Hoon Min; Kim, Useong; Park, Chulkwon; Kwon, Hyukwoo; Char, Kookrin

    2016-05-01

    We report p-doping of the BaSnO3 (BSO) by replacing Ba with K. The activation energy of K-dopants is estimated to be about 0.5 eV. We have fabricated pn junctions by using K-doped BSO as a p-type and La-doped BSO as an n-type semiconductor. I-V characteristics of these devices exhibit an ideal rectifying behavior of pn junctions with the ideality factor between 1 and 2, implying high integrity of the BSO materials. Moreover, the junction properties are found to be very stable after repeated high-bias and high-temperature thermal cycling, demonstrating a large potential for optoelectronic functions.

  20. Determination of some basic physical parameters of SnO based on SnO/Si pn heterojunctions

    SciTech Connect

    Li, Xiuxia; Liang, Lingyan E-mail: h-cao@nimte.ac.cn; Cao, Hongtao E-mail: h-cao@nimte.ac.cn; Qin, Ruifeng; Zhang, Hongliang; Gao, Junhua; Zhuge, Fei

    2015-03-30

    P-SnO/n-Si heterojunctions were constructed by using e-beam evaporation in combination with ultra-violet lithography technique. The current-voltage and capacitance-voltage characteristics of the pn heterojunctions were systematically investigated, through which the diode parameters, such as the turn-on voltage, forward-to-reverse current ratio, series resistance, ideality factor, and build-in voltage, were also determined. In particular, the pn heterojunctions presented a relatively good electrical rectifying behavior, with a forward-to-reverse current ratio up to 58 ± 5 at ±2.0 V. The relative permittivity and work function of the SnO films were measured to be 18.8 ± 1.7 and 4.3 eV, respectively. The energy band diagram of the heterojunctions was depicted in detail, which can interpret the rectifying behavior very well.

  1. Long-term performance and microbial ecology of a two-stage PN-ANAMMOX process treating mature landfill leachate.

    PubMed

    Li, Huosheng; Zhou, Shaoqi; Ma, Weihao; Huang, Pengfei; Huang, Guotao; Qin, Yujie; Xu, Bin; Ouyang, Hai

    2014-05-01

    Long-term performance of a two-stage partial nitritation (PN)-anaerobic ammonium oxidation (ANAMMOX) process treating mature landfill leachate was investigated. Stable partial nitritation performance was achieved in a sequencing batch reactor (SBR) using endpoint pH control, providing an effluent with a ratio of NO2(-)-N/NH4(+)-N at 1.23 ± 0.23. High rate nitrogen removal over 4 kg N/m(3)/d was observed in the ANAMMOX reactor in the first three months. However, during long-term operation, the ANAMMOX reactor can only stably operate under nitrogen load of 1 kg N/m(3)/d, with 85 ± 1% of nitrogen removal. The ammonium oxidizing bacteria (AOB) in the PN-SBR were mainly affiliated to Nitrosomonas sp. IWT514, Nitrosomonas eutropha and Nitrosomonas eutropha, the anaerobic ammonium oxidizing bacteria (AnAOB) in the ANAMMOX reactor were mainly affiliated to Kuenenia stuttgartiensis.

  2. High Fill Factors of Si Solar Cells Achieved by Using an Inverse Connection Between MOS and PN Junctions.

    PubMed

    Wang, Liang-Xing; Zhou, Zhi-Quan; Zhang, Tian-Ning; Chen, Xin; Lu, Ming

    2016-12-01

    Fill factors (FFs) of ~0.87 have been obtained for crystalline Si (c-Si) solar cells based on Ag front contacts after rapid thermal annealing. The usual single PN junction model fails to explain the high FF result. A metal/oxide/semiconductor (MOS) junction at the emitter is found to be inversely connected to the PN one, and when its barrier height/e is close to the open-circuit voltage of the solar cell, very high FF is obtainable. In this work, although the open-circuit voltage (<580 mV) is not high here, the efficiency of c-Si solar cell still reaches the state-of-the-art value (>20 %) due to the high FF achieved.

  3. Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy

    PubMed Central

    Shibata, Naoya; Findlay, Scott D.; Sasaki, Hirokazu; Matsumoto, Takao; Sawada, Hidetaka; Kohno, Yuji; Otomo, Shinya; Minato, Ryuichiro; Ikuhara, Yuichi

    2015-01-01

    Precise measurement and characterization of electrostatic potential structures and the concomitant electric fields at nanodimensions are essential to understand and control the properties of modern materials and devices. However, directly observing and measuring such local electric field information is still a major challenge in microscopy. Here, differential phase contrast imaging in scanning transmission electron microscopy with segmented type detector is used to image a p-n junction in a GaAs compound semiconductor. Differential phase contrast imaging is able to both clearly visualize and quantify the projected, built-in electric field in the p-n junction. The technique is further shown capable of sensitively detecting the electric field variations due to dopant concentration steps within both p-type and n-type regions. Through live differential phase contrast imaging, this technique can potentially be used to image the electromagnetic field structure of new materials and devices even under working conditions. PMID:26067359

  4. Least-Squares PN Formulation of the Transport Equation Using Self-Adjoint-Angular-Flux Consistent Boundary Conditions.

    SciTech Connect

    Vincent M. Laboure; Yaqi Wang; Mark D. DeHart

    2016-05-01

    In this paper, we study the Least-Squares (LS) PN form of the transport equation compatible with voids in the context of Continuous Finite Element Methods (CFEM).We first deriveweakly imposed boundary conditions which make the LS weak formulation equivalent to the Self-Adjoint Angular Flux (SAAF) variational formulation with a void treatment, in the particular case of constant cross-sections and a uniform mesh. We then implement this method in Rattlesnake with the Multiphysics Object Oriented Simulation Environment (MOOSE) framework using a spherical harmonics (PN) expansion to discretize in angle. We test our implementation using the Method of Manufactured Solutions (MMS) and find the expected convergence behavior both in angle and space. Lastly, we investigate the impact of the global non-conservation of LS by comparing the method with SAAF on a heterogeneous test problem.

  5. Steady-state characteristics of lateral p-n junction vertical-cavity surface-emitting lasers

    NASA Astrophysics Data System (ADS)

    Ryzhii, V.; Tsutsui, N.; Khmyrova, I.; Ikegami, T.; Vaccaro, P. O.; Taniyama, H.; Aida, T.

    2001-09-01

    We developed an analytical device model for lateral p-n junction vertical-cavity surface-emitting lasers (LJVCSELs) with a quantum well active region. The model takes into account the features of the carrier injection, transport, and recombination in LJVCSELs as well as the features of the photon propagation in the cavity. This model is used for the calculation and analysis of the LJVCSEL steady-state characteristics. It is shown that the localization of the injected electrons primarily near the p-n junction and the reabsorption of lateral propagating photons significantly effects the LJVCSELs performance, in particular, the LJVCSEL threshold current and power-current characteristics. The reincarnation of electrons and holes due to the reabsorption of lateral propagating photons can substantially decrease the threshold current.

  6. Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy.

    PubMed

    Shibata, Naoya; Findlay, Scott D; Sasaki, Hirokazu; Matsumoto, Takao; Sawada, Hidetaka; Kohno, Yuji; Otomo, Shinya; Minato, Ryuichiro; Ikuhara, Yuichi

    2015-06-12

    Precise measurement and characterization of electrostatic potential structures and the concomitant electric fields at nanodimensions are essential to understand and control the properties of modern materials and devices. However, directly observing and measuring such local electric field information is still a major challenge in microscopy. Here, differential phase contrast imaging in scanning transmission electron microscopy with segmented type detector is used to image a p-n junction in a GaAs compound semiconductor. Differential phase contrast imaging is able to both clearly visualize and quantify the projected, built-in electric field in the p-n junction. The technique is further shown capable of sensitively detecting the electric field variations due to dopant concentration steps within both p-type and n-type regions. Through live differential phase contrast imaging, this technique can potentially be used to image the electromagnetic field structure of new materials and devices even under working conditions.

  7. Crop yield gaps in Cameroon.

    PubMed

    Yengoh, Genesis T; Ardö, Jonas

    2014-03-01

    Although food crop yields per hectare have generally been increasing in Cameroon since 1961, the food price crisis of 2008 and the ensuing social unrest and fatalities raised concerns about the country's ability to meet the food needs of its population. This study examines the country's potential for increasing crop yields and food production to meet this food security challenge. Fuzzy set theory is used to develop a biophysical spatial suitability model for different crops, which in turn is employed to ascertain whether crop production is carried out in biophysically suited areas. We use linear regression to examine the trend of yield development over the last half century. On the basis of yield data from experimental stations and farmers' fields we assess the yield gap for major food crops. We find that yields have generally been increasing over the last half century and that agricultural policies can have significant effects on them. To a large extent, food crops are cultivated in areas that are biophysically suited for their cultivation, meaning that the yield gap is not a problem of biophysical suitability. Notwithstanding, there are significantly large yield gaps between actual yields on farmers' farms and maximum attainable yields from research stations. We conclude that agronomy and policies are likely to be the reasons for these large yield gaps. A key challenge to be addressed in closing the yield gaps is that of replenishing and properly managing soil nutrients.

  8. Diffused junction p(+)-n solar cells in bulk GaAs. II - Device characterization and modelling

    NASA Technical Reports Server (NTRS)

    Keeney, R.; Sundaram, L. M. G.; Rode, H.; Bhat, I.; Ghandhi, S. K.; Borrego, J. M.

    1984-01-01

    The photovoltaic characteristics of p(+)-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20 percent.

  9. Electrocatalytic Reduction of Carbon Dioxide with a Well-Defined PN 3 -Ru Pincer Complex

    SciTech Connect

    Min, Shixiong; Rasul, Shahid; Li, Huaifeng; Grills, David C.; Takanabe, Kazuhiro; Li, Lain-Jong; Huang, Kuo-Wei

    2015-11-13

    We established a well-defined PN3-Ru pincer complex (5) bearing a redox-active bipyridine ligand with an aminophosphine arm as an effective and stable molecular electrocatalyst for CO2 reduction to CO and HCOOH with negligible formation of H2 in a H2O/MeCN mixture.

  10. Frequency-Dependent Nature of Pn in Western China: Gaussian Beam Modeling of Data from the Hi-CLIMB Experiment

    DTIC Science & Technology

    2008-09-30

    Integrated Study of the Himalayan-Tibetan Continental Lithosphere during Mountain Building). This experiment is one of the largest broadband seismic...China using data from Hi-CLIMB (An Integrated Study of the Himalayan-Tibetan Continental Lithosphere during Mountain Building). This experiment is one of...the propagation of regional Pn waves recorded by Hi-CLIMB (An Integrated Study of the Himalayan-Tibetan Continental Lithosphere during Mountain

  11. Chemically fixed p-n heterojunctions for polymer electronics by means of covalent B-F bond formation.

    PubMed

    Hoven, Corey V; Wang, Huiping; Elbing, Mark; Garner, Logan; Winkelhaus, Daniel; Bazan, Guillermo C

    2010-03-01

    Widely used solid-state devices fabricated with inorganic semiconductors, including light-emitting diodes and solar cells, derive much of their function from the p-n junction. Such junctions lead to diode characteristics and are attained when p-doped and n-doped materials come into contact with each other. Achieving bilayer p-n junctions with semiconducting polymers has been hindered by difficulties in the deposition of thin films with independent p-doped and n-doped layers. Here we report on how to achieve permanently fixed organic p-n heterojunctions by using a cationic conjugated polyelectrolyte with fluoride counteranions and an underlayer composed of a neutral conjugated polymer bearing anion-trapping functional groups. Application of a bias leads to charge injection and fluoride migration into the neutral layer, where irreversible covalent bond formation takes place. After the initial charging and doping, one obtains devices with no delay in the turn on of light-emitting electrochemical behaviour and excellent current rectification. Such devices highlight how mobile ions in organic media can open opportunities to realize device structures in ways that do not have analogies in the world of silicon and promise new opportunities for integrating organic materials within technologies now dominated by inorganic semiconductors.

  12. Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctions.

    PubMed

    Gutsche, Christoph; Niepelt, Raphael; Gnauck, Martin; Lysov, Andrey; Prost, Werner; Ronning, Carsten; Tegude, Franz-Josef

    2012-03-14

    Axial GaAs nanowire p-n diodes, possibly one of the core elements of future nanowire solar cells and light emitters, were grown via the Au-assisted vapor-liquid-solid mode, contacted by electron beam lithography, and investigated using electron beam induced current measurements. The minority carrier diffusion lengths and dynamics of both, electrons and holes, were determined directly at the vicinity of the p-n junction. The generated photocurrent shows an exponential decay on both sides of the junction and the extracted diffusion lengths are about 1 order of magnitude lower compared to bulk material due to surface recombination. Moreover, the observed strong diameter-dependence is well in line with the surface-to-volume ratio of semiconductor nanowires. Estimating the surface recombination velocities clearly indicates a nonabrupt p-n junction, which is in essential agreement with the model of delayed dopant incorporation in the Au-assisted vapor-liquid-solid mechanism. Surface passivation using ammonium sulfide effectively reduces the surface recombination and thus leads to higher minority carrier diffusion lengths.

  13. AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor

    SciTech Connect

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Sharps, P.R.; Hou, H.Q.; Laroche, J.R.; Ren, F.

    2000-01-04

    The authors demonstrated a functional PnP double heterojunction bipolar transistor (DHBT) using AlGaAs, InGaAsN, and GaAs. The band alignment between InGaAsN and GaAs has a large {triangle}E{sub c} and negligible {triangle}E{sub v}, this unique characteristic is very suitable for PnP DHBT applications. The metalorganic vapor phase epitaxy (MOCVD) grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs PnP DHBT is lattice matched to GaAs and has a peak current gain of 25. Because of the smaller bandgap (E{sub g}=1.20eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, which is 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. And because GaAs is used for the collector, its BV{sub CEO} is 12 V, consistent with BV{sub CEO} of AlGaAs/GaAs HBTs.

  14. Integrated Advanced Microwave Sounding Unit-A (AMSU-A). Performance Verification Report: METSAT (S/N) AMSU-A1 Receiver Assemblies P/N 1356429-1 S/N F06 and P/N 1356409-1 S/N F06

    NASA Technical Reports Server (NTRS)

    1999-01-01

    This is the Performance Verification Report, METSAT (S/N 109) AMSU-A1 Receiver Assemblies, P/N 1356429-1 S/N F06 and P/N 1356409 S/N F06, for the Integrated Advanced Microwave Sounding Unit-A (AMSU-A).

  15. Electrical and Optical Performance Characteristics of p/n InGaAs Monolithic Interconnected Modules

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Fatemi, Navid S.; Jenkins, Phillip P.; Weizer, Victor G.; Hoffman, Richard W., Jr.; Murray, Christopher S.; Riley, David R.

    1997-01-01

    There has been a traditional trade-off in ThermoPhotoVoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A Monolithic Interconnected Module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual Indium Gallium Arsenide (InGaAs) devices series-connected on a single semi-insulating Indium Phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An InfraRed (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74eV InGaAs, have demonstrated V(sub infinity) = 3.2 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. IR reflectance measurements (greater than 2 microns) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55 eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

  16. Integrated Advanced Microwave Sounding Unit-A (AMSU-A). Performance Verification Report: Antenna Drive Subsystem METSAT AMSU-A2 (PN:1331200-2, SN:108)

    NASA Technical Reports Server (NTRS)

    Haapala, C.

    1999-01-01

    This is the Performance Verification Report, Antenna Drive Subassembly, Antenna Drive Subsystem, METSAT AMSU-A2 (P/N 1331200-2, SN: 108), for the Integrated Advanced Microwave Sounding Unit-A (AMSU-A).

  17. An efficient p-n heterojunction photocatalyst constructed from a coordination polymer nanoplate and a partically reduced graphene oxide for visible-light hydrogen production.

    PubMed

    Xu, Xinxin; Lu, Tingting; Liu, Xiaoxia; Wang, Xiuli

    2015-10-05

    A new p-n heterojunction photocatalyst has been synthesized successfully through chemical-bond-mediated combination of coordination polymer nanoplates (CPNPs) and partially reduced graphene oxide (PRGO) with a simple colloidal blending process. Photocatalytic H2 production by the p-n heterojunction photocatalyst PRGO/CPNP was investigated under visible-light irradiation, which illustrates that PRGO/CPNP exhibits a much higher photocatalytic H2 production rate than neat the CPNPs. The improvement of this photocatalytic property can be attributed to the inner electrical field formed in the p-n heterojunction, which impedes recombination of photogenerated electrons and holes. In PRGO/CPNP, the existence of the p-n heterojunction has been confirmed by electrochemical methods clearly. For PRGO/CPNP, the reductive degree of the PRGO has a great influence on the H2 production rate and an ideal condition to get a PRGO/CPNP photocatalyst with higher performance has been obtained.

  18. Fabrication of BiOBr nanosheets@TiO2 nanobelts p-n junction photocatalysts for enhanced visible-light activity

    NASA Astrophysics Data System (ADS)

    Zhao, Yang; Huang, Xiang; Tan, Xin; Yu, Tao; Li, Xiangli; Yang, Libin; Wang, Shucong

    2016-03-01

    The construction of p-n junction structure is a smart strategy for improving the photocatalytic activity, since p-n junctions can inhibit the recombination of photo-induced charges. Herein, BiOBr nanosheets@TiO2 nanobelts p-n junction photocatalysts were prepared by assembling BiOBr nanosheets on the surface of TiO2 nanobelts via a hydrothermal route followed by a co-precipitation process. BiOBr@TiO2 p-n junction photocatalysts exhibited enhanced photocatalytic activity in photocatalytic H2 production over water splitting and photodegradation of Rhodamine B (RhB) under visible light irradiation. Mott-Schottky plots confirmed the formation of p-n junctions in the interface of BiOBr and TiO2. The enhanced photocatalytic performance can be ascribed to the 1D nanostructure and the formation of p-n junctions. This work shows a potential application of low cost BiOBr as a substitute for noble metals in photocatalytic H2 production under visible light irradiation.

  19. The coating of conducting copolymer on coordination polymer nanorod: A visible light active p-n heterojunction photocatalyst for H2 production

    NASA Astrophysics Data System (ADS)

    Jia, Yuan; Mei, Ming-liang; Xu, Xin-xin; Wang, Lin-shan

    2016-06-01

    A visible light active p-n heterojunction photocatalyst was synthesized successfully through in-situ chemical oxidation copolymerization of aniline (ANI) and diphenylamine-4-sulfonate (DPAS) with the existence of coordination polymer nanorod (CPNR) under initiation of ammonium persulfate (APS). Compared with neat coordination polymer nanorod, the resulted p-n heterojunction photocatalyst exhibits higher H2 generationrate under visible light irradiation. In this heterojunction photocatalyst, as a p-type semiconductor possessing suitable energy levels with coordination polymer nanorod, poly-(aniline-co-N-(4-sulfophenyl)-aniline) (PAPSA) forms p-n heterojunction with n-type coordination polymer nanorod, the inner electric field of p-n heterojunction accelerates the separation of electrons and holes, which enhances H2 production performance. Furthermore, the influence of concentration ratio between DPAS and ANI on photocatalytic property of the p-n heterojunction photocatalyst was discussed and a reasonable condition to fabricate photocatalyst with high H2 generationrate had been obtained. During photocatalytic water splitting H2 generation, the p-n heterojunction photocatalyst exhibited outstanding stability.

  20. Chemical-Bond-Mediated p-n Heterojunction Photocatalyst Constructed from Coordination Polymer Nanoparticles and a Conducting Copolymer: Visible-Light Active and Highly Efficient.

    PubMed

    Xu, Xinxin; Lu, Tingting; Liu, Xiaoxia; Wang, Xiuli

    2015-11-23

    A visible-light-active p-n heterojunction photocatalyst has been synthesized by the enwrapping of poly[aniline-co-N-(4-sulfophenyl)aniline] (PAPSA) on a coordination polymer nanoparticle (NCP). Compared with the visible-light-inactive NCP, the new p-n heterojunction photocatalyst, PAPSA/NCP, exhibits a much higher efficiency in the reduction of Cr(VI) under visible light. PAPSA performs two functions in this p-n heterojunction photocatalyst. First, as a visible-light-active material, it extends the photoresponse region of the photocatalyst from the ultraviolet to the visible-light region. Secondly, as a p-type semiconductor possessing suitable energy levels with respect to NCP, PAPSA forms a p-n heterojunction with the n-type NCP; the inner electric field of the p-n heterojunction accelerates the separation of electrons and holes, which enhances the photocatalytic efficiency. Furthermore, the p-n heterojunction photocatalyst exhibits outstanding stability during the photocatalytic reduction of Cr(VI) .

  1. Geochronology of Danube Delta sediments The PN-II-RU-TE-2012-3-0351 project

    NASA Astrophysics Data System (ADS)

    Robert-Csaba, Begy; Andra-Rada, Iurian; (Rusu) Oana Alexandra, Dumitru; Luminita, Preoteasa; Hedvig, Simon; Alida, Timar-Gabor; Szabolcs, Kelemen

    2014-05-01

    fluxes within the Danube Delta and over the associated Danubian continental shelf, using the radiometric method of 210Pb (210Po) and 137Cs. The detailed stratigraphical survey of the deltaic sediments will provide an accurate view of the sedimentation characteristics in the last ~100 years, including the impact of the hydrotechnical works built within the Danube basin on the sedimentation rates and on the deltaic continental shelf evolution. Another important aspect of the present project is featured by the combined application of three complex radiometric and nuclear tools: alpha spectrometry (210Po), gamma-spectrometry (210Pb, 137Cs, and 226Ra) and luminescence absolute method. Acknoledgement: The financial support from the grant of the Romanian National Authority for Scientific Research CNCS-UEFISCDI, PN-II-RU-TE-2012-3-0351 (2013-2015) is acknoledged.

  2. P/N In(Al) GaAs multijunction laser power converters

    NASA Technical Reports Server (NTRS)

    Wojtczuk, Steven; Parados, Themis; Walker, Gilbert

    1994-01-01

    Eight In(AI)GaAs PN junctions grown epitaxially on the semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4V photovoltage per typical In(Al)GaAs junction to over 3 volts for the 1 sq cm laser power converted (LPC) chip. Advantages of multijunction LCP designs include the need for less circuitry for power reconditioning and the potential for lower I(sup 2)R power loss. As an example, these LPC's have a responsivity of approximately 1 amp/watt. With a single junction LPC, 100 watts/sq cm incident power would lead to about 100 A/sq cm short-circuit current at approximately 0.4V open-cicuit voltage. One disadvantage is the large current would lead to a large I(sup 2)R loss which would lower the fill factor so that 40 watts/sq cm output would not be obtained. Another is that few circuits are designed to work at 0.4 volts, so DC-DC power conversion circuitry would be necessary to raise the voltage to a reasonable level. The multijunction LPC being developed in this program is a step toward solving these problems. In the above example, an eight-junction LPC would have eight times the voltage, approximately 3V, so that DC-DC power conversion may not be needed in many instances. In addition, the multijunction LPC would have 1/8 the current of a single-junction LPC, for only 1/64 the I(sup 2)R loss if the series resistance is the same. Working monolithic multijunction laser power converters (LPC's) were made in two different compositions of the In(x)Al(y)Ga(1-x-y)As semiconductor alloy, In(0.53)Ga(0.47)As (0.74 eV) and In(0.5)Al(0.1)Ga(0.4)As (0.87 eV). The final 0.8 sq cm LPC's had output voltages of about 3 volts and output currents up to about one-half amp. Maximum 1.3 micron power conversion efficiencies were approximately 22 percent. One key advantage of multijunction LPC's is that they have higher output voltages, so that less DC-DC power conversion circuitry is needed in applications.

  3. Incorporating phenology into yield models

    NASA Astrophysics Data System (ADS)

    Gray, J. M.; Friedl, M. A.

    2015-12-01

    Because the yields of many crops are sensitive to meteorological forcing during specific growth stages, phenological information has potential utility in yield mapping and forecasting exercises. However, most attempts to explain the spatiotemporal variability in crop yields with weather data have relied on growth stage definitions that do not change from year-to-year, even though planting, maturity, and harvesting dates show significant interannual variability. We tested the hypothesis that quantifying temperature exposures over dynamically determined growth stages would better explain observed spatiotemporal variability in crop yields than statically defined time periods. Specifically, we used National Agricultural and Statistics Service (NASS) crop progress data to identify the timing of the start of the maize reproductive growth stage ("silking"), and examined the correlation between county-scale yield anomalies and temperature exposures during either the annual or long-term average silking period. Consistent with our hypothesis and physical understanding, yield anomalies were more correlated with temperature exposures during the actual, rather than the long-term average, silking period. Nevertheless, temperature exposures alone explained a relatively low proportion of the yield variability, indicating that other factors and/or time periods are also important. We next investigated the potential of using remotely sensed land surface phenology instead of NASS progress data to retrieve crop growth stages, but encountered challenges related to crop type mapping and subpixel crop heterogeneity. Here, we discuss the potential of overcoming these challenges and the general utility of remotely sensed land surface phenology in crop yield mapping.

  4. Brazil soybean yield covariance model

    NASA Technical Reports Server (NTRS)

    Callis, S. L.; Sakamoto, C.

    1984-01-01

    A model based on multiple regression was developed to estimate soybean yields for the seven soybean-growing states of Brazil. The meteorological data of these seven states were pooled and the years 1975 to 1980 were used to model since there was no technological trend in the yields during these years. Predictor variables were derived from monthly total precipitation and monthly average temperature.

  5. Rx for low cash yields.

    PubMed

    Tobe, Chris

    2003-10-01

    Certain strategies can offer not-for-profit hospitals potentially greater investment yields while maintaining stability and principal safety. Treasury inflation-indexed securities can offer good returns, low volatility, and inflation protection. "Enhanced cash" strategies offer liquidity and help to preserve capital. Stable value "wrappers" allow hospitals to pursue higher-yielding fixed-income securities without an increase in volatility.

  6. Genotypic variability in physiological, biomass and yield response to drought stress in pigeonpea.

    PubMed

    Vanaja, M; Maheswari, M; Sathish, P; Vagheera, P; Jyothi Lakshmi, N; Vijay Kumar, G; Yadav, S K; Razzaq, Abdul; Singh, Jainender; Sarkar, B

    2015-10-01

    Three pigeonpea (Cajanus cajan L. Millsp.) genotypes- GT-1, AKP-1 and PRG-158 with varying crop duration, growth habit and flowering pattern were evaluated for variability in their response for drought stress. Drought stress was imposed at initiation of flowering and the observations on biomass and seed yield parameters were recorded at harvest. The magnitude of response of individual component to drought stress was found to be genotype specific. Drought stress significantly decreased photosynthetic rate (PN), transpiration rate (Tr) and relative water content (RWC) in all the genotypes, however the magnitude of reduction differed with genotype. With drought stress, the reduction of PN was highest in GT-1 while reduction in Tr was highest in PRG-158. The genotype AKP-1, accumulated significantly higher concentrations of osmotic solutes especially proline under water deficit stress, this facilitated it to maintain higher relative water content (RWC) and lower malondialdehyde (MDA) content as compared to other genotypes. Drought stress also impacted biomass production and their partitioning to vegetative and reproductive components at harvest. There was significant variability between the genotypes for seed yield under drought stress while it was non-significant under well-watered condition. Drought stress enhanced flower drop and decreased flower to pod conversion resulting in reduced pod number and seed number in PRG-158 and GT-1. The genotype AKP-1 recorded superior performance for seed yield under stress environment due to its ability in maintaining pod and seed number as well as improved test weight (100 seed weight). Under drought stress, significant positive association of seed yield with proline, seed number, pod number and test weight clearly indicating their role in drought tolerance.

  7. TiO2-NiO p-n nanocomposite with enhanced sonophotocatalytic activity under diffused sunlight.

    PubMed

    Vinoth, R; Karthik, P; Devan, K; Neppolian, B; Ashokkumar, Muthupandian

    2017-03-01

    TiO2-NiO composites with p-n junction were developed by assembling p-type NiO on n-type TiO2 using ultrasound assisted wet impregnation method. The sonophotocatalytic efficiencies of pure TiO2 and TiO2-NiO composites were evaluated under diffused sunlight using methyl orange (MO) as a model pollutant. The impregnation of NiO nanoparticles on TiO2 considerably enhanced the optical absorption in visible region (500-800nm) due to the formation of p-n junctions at the interface between TiO2 and NiO. The internal electric field induced by the p-n junction led to effective separation of electron-hole pairs and thereby generating a large amount of reactive species for the degradation of MO. The individual effect of ultrasound and diffused sunlight for the degradation of MO was found to be 30% and 6%, respectively. A synergy of 4.8 fold was achieved when ultrasound was combined with photocatalytic degradation process in the presence of diffused sunlight. The sonophotocatalytic activity of TiO2-NiO photocatalysts with different NiO loading was also evaluated and 10wt% NiO loading was found to be optimal. Moreover, 66% of Total Organic Carbon (TOC) removal was achieved with the optimized TiO2-NiO composite in 140min. In addition, the TiO2-NiO composite exhibited an enhanced photocurrent response under visible light illumination.

  8. Chemical abundances in the PN Wray16-423 in the Sagittarius dwarf spheroidal galaxy: constraining the dust composition

    NASA Astrophysics Data System (ADS)

    Otsuka, Masaaki

    2015-10-01

    We performed a detailed analysis of elemental abundances, dust features, and polycyclic aromatic hydrocarbons (PAHs) in the C-rich planetary nebula (PN) Wray16-423 in the Sagittarius dwarf spheroidal galaxy, based on a unique data set taken from the Subaru/HDS, MPG/ESO FEROS, HST/WFPC2, and Spitzer/IRS. We performed the first measurements of Kr, Fe, and recombination O abundance in this PN. The extremely small [Fe/H] implies that most Fe atoms are in the solid phase, considering into account the abundance of [Ar/H]. The Spitzer/IRS spectrum displays broad 16-24 μm and 30 μm features, as well as PAH bands at 6-9 and 10-14 μm. The unidentified broad 16-24 μm feature may not be related to iron sulphide (FeS), amorphous silicate, or PAHs. Using the spectral energy distribution model, we derived the luminosity and effective temperature of the central star, and the gas and dust masses. The observed elemental abundances and derived gas mass are in good agreement with asymptotic giant branch nucleosynthesis models for an initial mass of 1.90 M⊙ and a metallicity of Z = 0.004. We infer that respectively about 80, 50, and 90 per cent of the Mg, S, and Fe atoms are in the solid phase. We also assessed the maximum possible magnesium sulphide (MgS) and iron-rich sulphide (Fe50S) masses and tested whether these species can produce the band flux of the observed 30 μm feature. Depending on what fraction of the sulphur is in sulphide molecules such as CS, we conclude that MgS and Fe50S could be possible carriers of the 30 μm feature in this PN.

  9. Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode

    NASA Astrophysics Data System (ADS)

    Resfa, A.; Menezla, Brahimi. R.; Benchhima, M.

    2014-08-01

    This work aims to determine the characteristic I (breakdown voltage) of the inverse current in a GaAs PN junction diode, subject to a reverse polarization, while specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P+N structure using like material of basis the III-V compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region (SCR) and that is the trap density donor and acceptor states. The carrier crossing the space charge region (SCR) of W thickness creates N electron—hole pairs: for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region (SCR) by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I(V) current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions (1) and (3), the current thermal generation in the region (2), the leakage current in the surface, and the breakdown voltage.

  10. Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

    NASA Technical Reports Server (NTRS)

    Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  11. Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

    NASA Technical Reports Server (NTRS)

    Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

    1996-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  12. pn-CCDs in a low-background environment: detector background of the CAST x-ray telescope

    NASA Astrophysics Data System (ADS)

    Kuster, M.; Cebrián, S.; Rodríquez, A.; Kotthaus, R.; Bräuninger, H.; Franz, J.; Friedrich, P.; Hartmann, R.; Kang, D.; Lutz, G.; Strüder, L.

    2005-08-01

    The CAST experiment at CERN (European Organization of Nuclear Research) searches for axions from the sun. The axion is a pseudoscalar particle that was motivated by theory thirty years ago, with the intention to solve the strong CP problem. Together with the neutralino, the axion is one of the most promising dark matter candidates. The CAST experiment has been taking data during the last two years, setting an upper limit on the coupling of axions to photons more restrictive than from any other solar axion search in the mass range below 10-1 eV. In 2005 CAST will enter a new experimental phase extending the sensitivity of the experiment to higher axion masses. The CAST experiment strongly profits from technology developed for high energy physics and for X-ray astronomy: A superconducting prototype LHC magnet is used to convert potential axions to detectable X-rays in the 1-10 keV range via the inverse Primakoff effect. The most sensitive detector system of CAST is a spin-off from space technology, aWolter I type X-ray optics in combination with a prototype pn-CCD developed for ESA's XMM-Newton mission. As in other rare event searches, background suppression and a thorough shielding concept is essential to improve the sensitivity of the experiment to the best possible. In this context CAST offers the opportunity to study the background of pn-CCDs and its long term behavior in a terrestrial environment with possible implications for future space applications. We will present a systematic study of the detector background of the pn-CCD of CAST based on the data acquired since 2002 including preliminary results of our background simulations.

  13. Nanostructured p-type CZTS thin films prepared by a facile solution process for 3D p-n junction solar cells

    NASA Astrophysics Data System (ADS)

    Park, Si-Nae; Sung, Shi-Joon; Sim, Jun-Hyoung; Yang, Kee-Jeong; Hwang, Dae-Kue; Kim, Junho; Kim, Gee Yeong; Jo, William; Kim, Dae-Hwan; Kang, Jin-Kyu

    2015-06-01

    Nanoporous p-type semiconductor thin films prepared by a simple solution-based process with appropriate thermal treatment and three-dimensional (3D) p-n junction solar cells fabricated by depositing n-type semiconductor layers onto the nanoporous p-type thin films show considerable photovoltaic performance compared with conventional thin film p-n junction solar cells. Spin-coated p-type Cu2ZnSnS4 (CZTS) thin films prepared using metal chlorides and thiourea show unique nanoporous thin film morphology, which is composed of a cluster of CZTS nanograins of 50-500 nm, and the obvious 3D p-n junction structure is fabricated by the deposition of n-type CdS on the nanoporous CZTS thin films by chemical bath deposition. The photovoltaic properties of 3D p-n junction CZTS solar cells are predominantly affected by the scale of CZTS nanograins, which is easily controlled by the sulfurization temperature of CZTS precursor films. The scale of CZTS nanograins determines the minority carrier transportation within the 3D p-n junction between CZTS and CdS, which are closely related with the photocurrent of series resistance of 3D p-n junction solar cells. 3D p-n junction CZTS solar cells with nanograins below 100 nm show power conversion efficiency of 5.02%, which is comparable with conventional CZTS thin film solar cells.Nanoporous p-type semiconductor thin films prepared by a simple solution-based process with appropriate thermal treatment and three-dimensional (3D) p-n junction solar cells fabricated by depositing n-type semiconductor layers onto the nanoporous p-type thin films show considerable photovoltaic performance compared with conventional thin film p-n junction solar cells. Spin-coated p-type Cu2ZnSnS4 (CZTS) thin films prepared using metal chlorides and thiourea show unique nanoporous thin film morphology, which is composed of a cluster of CZTS nanograins of 50-500 nm, and the obvious 3D p-n junction structure is fabricated by the deposition of n-type CdS on the

  14. A study of the electrical properties of p-n junctions formed by ion-implantation into gallium arsenide

    NASA Technical Reports Server (NTRS)

    Lin, A. H.

    1972-01-01

    In the process of ion implantation, ion beams bombard the surface and create undesirable surface effects. The surface effects were investigated, and surface leakage currents were shown to be reduced by surface treatment. I-V characteristics and C-V measurements were obtained for the Zn-GaAs and Zn-(In,Ga)As junction is considered as a p-i-n heterojunction, without generation-recombination current. The Zn-GaAs junction is considered as a p-n homojunction with appreciable generation-recombination currents.

  15. Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2.

    PubMed

    Wang, Zhenwei; He, Xin; Zhang, Xi-Xiang; Alshareef, Husam N

    2016-11-01

    A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.

  16. N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

    SciTech Connect

    Eliseev, P G

    2012-12-31

    A survey is presented of works on creation and investigation of semiconductor lasers during 1957 - 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

  17. Comparison of CDOM EEMs Characteristics along F and PN section in Eastern China Sea: significance for sources tracing

    NASA Astrophysics Data System (ADS)

    Du, Yong; Zhang, Xiaoyu; Jiang, Binbin; Huang, Dasong; Yao, Lingling

    2015-04-01

    In this paper, a total of 28 water samples were collected mainly from three sections(C section in the Yangtze river inner estuary, PN section and F section on the spindle of Changjiang diluted water influenced by different hydrodynamic processes),which taken on two cruises in spring and summer of 2011. Absorption and fluorescence spectroscopy were measured along with dissolved organic carbon(DOC) concentrations and temperature, salinity and another environmental parameters to characterize the material sources and environmental implications of dissolved organic matter(DOM). Two protein-like components(tyrosine-like peak B and tryptophan-like peak T1), and two humic-like components(marine humic-like peak M and ultraviolet region humic-like peak A ) were identified by PARAFAC. We discussed CDOM distribution characteristic, material composition, and influence factors during the slowly dilution process of Changjiang diluted water into the east China sea by comparing the correlation of the CDOM absorption, fluorescence intensity, and fluorescence peak with DOC, in order to provide the based biogeochemistry theory basis for building DOC implications using CDOM fluorescence properties. The results revealed that:1) the Yangtze river and its inner estuary (upstream of the river mouth) were detected a higher amount of humic-like components. With the rapid dilution (or settlement) at the inner estuary, the humic-like components would further spread and dilute slowly on PN section and F section. On PN section, the terrigenous material is the main source material, and the main mechanism of CDOM distribution characteristics is controlled by dilution diffusion. Affected by the water mass convergence, marine dissolved organic matter in local waters had obvious input. However, due to the complexed hydrodynamic environment on F section, the input of terrigenous material has many ways. The influence of marine dissolved organic matter increased with the offshore distance increases.2

  18. Studies of Valence Band Alignment Between Nitrided GaPN/GaP (111) Interface Using X-ray Photoelectron Spectroscopy

    SciTech Connect

    Khamari, Shailesh K.; Sinha, A. K.; Oak, S. M.; Banik, S.; Barman, S. R.; Dixit, V. K.

    2011-07-15

    The analysis of core levels positions of Ga{sub 3}d, N{sub 1s} and P{sub 2}p at different etching depth from the plasma nitrided GaP (111) surface shows that the nitrogen ions interact with both Gallium and Phosphorous ions with nearly equal probability. The analysis of valence band spectra shows the type-II band alignment between GaPN{sub 0.22}/GaP and the valence band offset is {approx}2.2{+-}0.1 eV.

  19. Investigation of the Exclusive {sup 3}He(e,e{sup '}pn){sup 1}H Reaction

    SciTech Connect

    Middleton, D. G.; Grabmayr, P.; Hehl, T.; Heim, J.; Martin, I.; Moschini, F.; Annand, J. R. M.; Glazier, D. I.; MacGregor, I. J. D.; McGeorge, J. C.; Monstad, K.; Rosner, G.; Watts, D. P.; Antelo, M. Ases; Ayerbe, C.; Baumann, D.; Bermuth, J.; Bernauer, J.; Boehm, R.; Ding, M.

    2009-10-09

    Cross sections for the {sup 3}He(e,e{sup '}pn){sup 1}H reaction were measured for the first time at energy transfers of 220 and 270 MeV for several momentum transfers ranging from 300 to 450 MeV/c. Cross sections are presented as a function of the momentum of the recoil proton and the momentum transfer. Continuum Faddeev calculations using the Argonne V18 and Bonn-B nucleon-nucleon potentials overestimate the measured cross sections by a factor 5 at low recoil proton momentum with the discrepancy becoming smaller at higher recoil proton momentum.

  20. Multi-terminal magnetotransport measurements over a tunable graphene p-n junction created by AFM-nanomachining

    NASA Astrophysics Data System (ADS)

    Schmidt, H.; Smirnov, D.; Rode, J.; Haug, R. J.

    2013-12-01

    An Atomic Force Microscope is used to alter one part of a single layer graphene sample locally. Transport experiments at low temperatures are then used to characterize the different parts independently with field effect and Hall measurements. It is shown, that the nanomachining leads to an effective doping in the altered area and therefore to a difference in the charge carrier density of Δn = 3.5 ṡ 1015m-2 between the unchanged and changed part. These two parts can be tuned with a global backgate to form a junction of different polarity, i.e. a p-n junction.

  1. Measurement of the 3He(e,e'p)pn reaction at high missing energies and momenta

    SciTech Connect

    F. Benmokhtar; M. M. Rvachev; E. Penel-Nottaris

    2004-09-01

    Results of the Jefferson Lab Hall A quasielastic 3He(e,e'p)pn measurements are presented. These measurements were performed at fixed transferred momentum and energy, q = 1502 MeV/c and omega = 840 MeV, respectively, for missing momenta {+-} up to 1 GeV/c and missing energies in the continuum region, up to pion threshold; this kinematic coverage is much more extensive than that of any previous experiment. The cross section data are presented along with the effective momentum density distribution and compared to theoretical models.

  2. Structure and physical properties of ternary W 5Si 3-type antimonides and bismuthides Zr 5M1-xPn 2+x ( M=Cr, Mn; Pn=Sb, Bi)

    NASA Astrophysics Data System (ADS)

    Tkachuk, Andriy V.; Mar, Arthur

    2004-11-01

    Four new ternary compounds Zr 5M1-xPn 2+x ( M=Cr, Mn; Pn=Sb, Bi) were synthesized by arc-melting and annealing at 800 °C. They crystallize in the tetragonal W 5Si 3-type structure. The crystal structure of Zr 5Cr 0.49(2)Sb 2.51(2) was refined from powder X-ray diffraction data by the Rietveld method (Pearson symbol tI32, tetragonal, space group I4/ mcm, Z=4, a=11.1027(6) Å, c=5.5600(3) Å). Four-probe electrical resistivity measurements on sintered polycrystalline samples indicated metallic behavior. Magnetic susceptibility measurements between 2 and 300 K revealed temperature-independent Pauli paramagnetism for Zr 5Cr 1-xSb 2+x and Zr 5Cr 1-xBi 2+x, but a strong temperature dependence for Zr 5Mn 1-xSb 2+x and Zr 5Mn 1-xBi 2+x which was fit to the Curie-Weiss law for the latter with θ=-11.3 K and μeff=1.81(1) μ. Band structure calculations for Zr 5Cr 0.5Sb 2.5 support a structural model in which Cr and Sb atoms alternate within the chain of interstitial sites formed at the centers of square antiprismatic Zr 8 clusters.

  3. Decomposing global crop yield variability

    NASA Astrophysics Data System (ADS)

    Ben-Ari, Tamara; Makowski, David

    2014-11-01

    Recent food crises have highlighted the need to better understand the between-year variability of agricultural production. Although increasing future production seems necessary, the globalization of commodity markets suggests that the food system would also benefit from enhanced supplies stability through a reduction in the year-to-year variability. Here, we develop an analytical expression decomposing global crop yield interannual variability into three informative components that quantify how evenly are croplands distributed in the world, the proportion of cultivated areas allocated to regions of above or below average variability and the covariation between yields in distinct world regions. This decomposition is used to identify drivers of interannual yield variations for four major crops (i.e., maize, rice, soybean and wheat) over the period 1961-2012. We show that maize production is fairly spread but marked by one prominent region with high levels of crop yield interannual variability (which encompasses the North American corn belt in the USA, and Canada). In contrast, global rice yields have a small variability because, although spatially concentrated, much of the production is located in regions of below-average variability (i.e., South, Eastern and South Eastern Asia). Because of these contrasted land use allocations, an even cultivated land distribution across regions would reduce global maize yield variance, but increase the variance of global yield rice. Intermediate results are obtained for soybean and wheat for which croplands are mainly located in regions with close-to-average variability. At the scale of large world regions, we find that covariances of regional yields have a negligible contribution to global yield variance. The proposed decomposition could be applied at any spatial and time scales, including the yearly time step. By addressing global crop production stability (or lack thereof) our results contribute to the understanding of a key

  4. Grapevine canopy reflectance and yield

    NASA Technical Reports Server (NTRS)

    Minden, K. A.; Philipson, W. R.

    1982-01-01

    Field spectroradiometric and airborne multispectral scanner data were applied in a study of Concord grapevines. Spectroradiometric measurements of 18 experimental vines were collected on three dates during one growing season. Spectral reflectance, determined at 30 intervals from 0.4 to 1.1 microns, was correlated with vine yield, pruning weight, clusters/vine, and nitrogen input. One date of airborne multispectral scanner data (11 channels) was collected over commercial vineyards, and the average radiance values for eight vineyard sections were correlated with the corresponding average yields. Although some correlations were significant, they were inadequate for developing a reliable yield prediction model.

  5. A convenient method for experimental determination of yields and isomeric ratios in photonuclear reactions measured by the activation technique

    NASA Astrophysics Data System (ADS)

    Kolev, D.; Dobreva, E.; Nenov, N.; Todorov, V.

    1995-02-01

    A generalized exact formula is derived for a determination of the experimental isomeric ratio in any incident particle activation. For the particular case, when the activity of the ground state results from the simultaneous decay of both states and can be conveniently measured, the appropriate modification of this formula is evaluated and applied to six photonuclear reactions induced by 43 MeV bremsstrahlung. The experimental isomeric yield ratios of (γ, 3n) 110m,gIn; (γ, p) (γ, pn), (γ, 2n2p) 117m,gIn; (γ, n) 164m,gHo and (γ, 3n) 162m,gHo are deduced.

  6. Yield surfaces for anisotropic plates

    NASA Astrophysics Data System (ADS)

    Walker, J. D.; Thacker, B. H.

    2000-04-01

    Aerospace systems are incorporating composite materials into their structures. The composite materials are often anisotropic in mechanical response due to their geometric layout. For many years, the failure surfaces of anisotropic materials were thought to be characterizable by a quadratic function in the stress, referred to as a Tsai-Wu yield surface, or, in a more restrictive form, a Tsai-Hill yield surface. Such a representation does not work for materials that are strong in two directions and weak in one direction, which is the case of most interest since it represents fiber/epoxy composite plates. This paper demonstrates the impossibility of modeling the failure surface with either the Tsai-Wu or Tsai-Hill failure surfaces. A yield surface is presented based on the lemniscate, which is quartic in the stress. This new yield surface addresses the case of strong in two directions and weak in one.

  7. Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

    DOEpatents

    Toet, Daniel; Sigmon, Thomas W.

    2005-08-23

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  8. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

    DOEpatents

    Toet, Daniel; Sigmon, Thomas W.

    2003-01-01

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  9. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

    DOEpatents

    Toet, Daniel; Sigmon, Thomas W.

    2004-12-07

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  10. Electrical and photoresponse properties of an intramolecular p-n homojunction in single phosphorus-doped ZnO nanowires.

    PubMed

    Li, Ping-Jian; Liao, Zhi-Min; Zhang, Xin-Zheng; Zhang, Xue-Jin; Zhu, Hui-Chao; Gao, Jing-Yun; Laurent, K; Leprince-Wang, Y; Wang, N; Yu, Da-Peng

    2009-07-01

    The single-crystal n-type and p-type ZnO nanowires (NWs) were synthesized via a chemical vapor deposition method, where phosphorus pentoxide was used as the dopant source. The electrical and photoluminescence studies reveal that phosphorus-doped ZnO NWs (ZnO:P NWs) can be changed from n-type to p-type with increasing P concentration. Furthermore, we report for the first time the formation of an intramolecular p-n homojunction in a single ZnO:P NW. The p-n junction diode has a high on/off current ratio of 2.5 x 10(3) and a low forward turn-on voltage of approximately 1.37 V. Finally, the photoresponse properties of the diode were investigated under UV (325 nm) excitation in air at room temperature. The high photocurrent/dark current ratio (3.2 x 10(4)) reveals that the diode has a potential as extreme sensitive UV photodetectors.

  11. Pharmacological characterisation of the highly NaV1.7 selective spider venom peptide Pn3a

    PubMed Central

    Deuis, Jennifer R.; Dekan, Zoltan; Wingerd, Joshua S.; Smith, Jennifer J.; Munasinghe, Nehan R.; Bhola, Rebecca F.; Imlach, Wendy L.; Herzig, Volker; Armstrong, David A.; Rosengren, K. Johan; Bosmans, Frank; Waxman, Stephen G.; Dib-Hajj, Sulayman D.; Escoubas, Pierre; Minett, Michael S.; Christie, Macdonald J.; King, Glenn F.; Alewood, Paul F.; Lewis, Richard J.; Wood, John N.; Vetter, Irina

    2017-01-01

    Human genetic studies have implicated the voltage-gated sodium channel NaV1.7 as a therapeutic target for the treatment of pain. A novel peptide, μ-theraphotoxin-Pn3a, isolated from venom of the tarantula Pamphobeteus nigricolor, potently inhibits NaV1.7 (IC50 0.9 nM) with at least 40–1000-fold selectivity over all other NaV subtypes. Despite on-target activity in small-diameter dorsal root ganglia, spinal slices, and in a mouse model of pain induced by NaV1.7 activation, Pn3a alone displayed no analgesic activity in formalin-, carrageenan- or FCA-induced pain in rodents when administered systemically. A broad lack of analgesic activity was also found for the selective NaV1.7 inhibitors PF-04856264 and phlotoxin 1. However, when administered with subtherapeutic doses of opioids or the enkephalinase inhibitor thiorphan, these subtype-selective NaV1.7 inhibitors produced profound analgesia. Our results suggest that in these inflammatory models, acute administration of peripherally restricted NaV1.7 inhibitors can only produce analgesia when administered in combination with an opioid. PMID:28106092

  12. Tunable GaTe-MoS2 van der Waals p-n Junctions with Novel Optoelectronic Performance.

    PubMed

    Wang, Feng; Wang, Zhenxing; Xu, Kai; Wang, Fengmei; Wang, Qisheng; Huang, Yun; Yin, Lei; He, Jun

    2015-11-11

    P-n junctions based on vertically stacked van der Waals (vdW) materials have attracted a great deal of attention and may open up unforeseen opportunities in electronics and optoelectronics. However, due to the lack of intrinsic p-type vdW materials, most previous studies generally adopted electrical gating, special electrode contacts, or chemical doping methods to realize p-n vdW junctions. GaTe is an intrinsic p-type vdW material with a relatively high charge density, and it has a direct band gap that is independent of thickness. Here, we report the construction of ultrathin and tunable p-GaTe/n-MoS2 vdW heterostructure with high photovoltaic and photodetecting performance. The rectification ratio, external quantum efficiency, and photoresponsivity are as high as 4 × 10(5), 61.68%, and 21.83 AW(-1), respectively. In particular, the detectivity is up to 8.4 × 10(13) Jones, which is even higher than commercial Si, InGaAs photodetectors. This study demonstrates the promising potential of p-GaTe/n-MoS2 heterostructures for next-generation electronic and optoelectronic devices.

  13. Binary Oxide p-n Heterojunction Piezoelectric Nanogenerators with an Electrochemically Deposited High p-Type Cu2O Layer.

    PubMed

    Baek, Seung Ki; Kwak, Sung Soo; Kim, Joo Sung; Kim, Sang Woo; Cho, Hyung Koun

    2016-08-31

    The high performance of ZnO-based piezoelectric nanogenerators (NGs) has been limited due to the potential screening from intrinsic electron carriers in ZnO. We have demonstrated a novel approach to greatly improve piezoelectric power generation by electrodepositing a high-quality p-type Cu2O layer between the piezoelectric semiconducting film and the metal electrode. The p-n heterojunction using only oxides suppresses the screening effect by forming an intrinsic depletion region, and thus sufficiently enhances the piezoelectric potential, compared to the pristine ZnO piezoelectric NG. Interestingly, a Sb-doped Cu2O layer has high mobility and low surface trap states. Thus, this doped layer is an attractive p-type material to significantly improve piezoelectric performance. Our results revealed that p-n junction NGs consisting of Au/ZnO/Cu2O/indium tin oxide with a Cu2O:Sb (cuprous oxide with a small amount of antimony) layer of sufficient thickness (3 μm) exhibit an extraordinarily high piezoelectric potential of 0.9 V and a maximum output current density of 3.1 μA/cm(2).

  14. Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells.

    PubMed

    Lee, Ya-Ju; Yao, Yung-Chi; Yang, Chia-Hao

    2013-01-14

    A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. The slanted ITO film exhibits an acceptable resistivity of 1.07 x 10⁻³Ω-cm underwent RTA treatment of T = 450°C, and the doping concentration and carrier mobility by Hall measurement amount to 3.7 x 10²⁰ cm⁻³ and 15.8 cm²/V-s, respectively, with an n-type doping polarity. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode. Under AM 1.5 G normal illumination, our axial p-n junction SiNW solar cell exhibits an open circuit voltage of VOC = 0.56 V, and a short circuit current of JSC = 1.54 mA/cm² with a fill factor of FF = 30%, resulting in a total power conversion efficiency of PEC = 0.26%.

  15. Surface passivation and protection of Pt loaded multicrystalline pn+ silicon photocathodes by atmospheric plasma oxidation for improved solar water splitting

    NASA Astrophysics Data System (ADS)

    Fan, Ronglei; Tang, Chengshuang; Xin, Yu; Su, Xiaodong; Wang, Xiaodong; Shen, Mingrong

    2016-12-01

    In the traditional methods such as atomic layer deposition and sputtering, a thin metal oxide layer was usually deposited before the loading of catalysts to protect Si photoelectrodes from oxidation during solar water splitting, and this often results in the transfer of photogenerated carriers from Si to electrolyte more or less inhibited. We here use an atmospheric plasma oxidation method to improve this. A SiO2 protective layer, also an effective passivation layer of Si to increase the life time of carriers, is fabricated on Pt loaded multicrystalline pn+-Si photocathodes. Compared with the un-protected one, the energy conversion efficiency of the plasma-treated Pt/pn+-Si photocathode increases from 6.2% to 8.9% under 100 mW/cm2 Xe lamp, and its stability improves from less than 1-22 h under continuous H2 production. This research provides a conceptual strategy to ensure the direct contact among the Si/Pt/electrolyte and protect and passivate the other part of Si simultaneously.

  16. Ion induced modification in free volume in PN-6 and PES polymers by positron annihilation lifetime studies

    NASA Astrophysics Data System (ADS)

    Kumar, Rajesh; Prasad, Rajendra

    2007-03-01

    The irradiation of polymeric materials with swift heavy ions (SHI) results in a change of their free volume properties which have strong correlation with their macroscopic properties. Positron annihilation lifetime spectroscopy (PALS) has been developed into a powerful characterization tool for the study of free volume and free volume fraction in polymers. Polyamide nylon-6 (PN-6) and polyethersulphone (PES) films of thickness of 250 μm were irradiated with C5+ ions of energy 70 MeV from 15 UD Pelletron accelerator at Inter University Accelerator Centre (IUAC), New Delhi, India. PN-6 films were irradiated to the fluences of 1011, 1012 and 1013 ions/cm2 whereas PES films were irradiated to the fluences of 9.3 × 1011, 9.3 × 1012 and 1.2 × 1013 ions/cm2. Characterization of the effect of ion irradiation on free volume has been done by PALS. The average free volume and fractional free volume obtained from long lived component, attributed to ortho-positronium (o-Ps) lifetime, are found to decrease with the fluence in both the cases. With increasing fluence, scissioned segments cross-link randomly, resulting in a decrease of average free volume due to overlapping of tracks.

  17. Properties of the fullerene C60-containing PN Lin49 in the SMC; Explanations of strong near-IR excess

    NASA Astrophysics Data System (ADS)

    Otsuka, Masaaki; Kemper, Francisca; Leal-Ferreira, Marcelo L.; Aleman, Isabel; Bernard-Salas, Jeronimo; Cami, Jan; Ochsendorf, Bram; Peeters, Els

    2016-07-01

    We performed a detailed spectroscopic analysis of the fullerene C6o-containing planetary nebula (PN) Lin49 in the Small Magellanic Cloud (SMC). Lin49 is a C-rich and metal- deficient PN (Z∼⃒0.0006) and its nebular abundances are in agreement with the AGB model for the initially 1.25Mʘ stars with the metallicity Z = 0.001 of Fishlock et al. (2014, [1]). By stellar absorption fitting with TLUSTY, we derived stellar abundances, effective temperature, and surface gravity. We constructed the photo-ionization model with CLOUDY in order to investigate physical conditions of Lin49. The model with the 0.005-0.1 μm radius graphite and a constant hydrogen density shell could not fit the ∼⃒1-5 μm SED owing to the strong near-IR excess. We propose that the near-IR excess indicates (1) the presence of extremely small carbon molecules or (2) the presence of high-density structure surrounding the central star.

  18. Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.

    PubMed

    Shevlyagin, A V; Goroshko, D L; Chusovitin, E A; Galkin, K N; Galkin, N G; Gutakovskii, A K

    2015-10-05

    By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

  19. Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites

    NASA Astrophysics Data System (ADS)

    Shevlyagin, A. V.; Goroshko, D. L.; Chusovitin, E. A.; Galkin, K. N.; Galkin, N. G.; Gutakovskii, A. K.

    2015-10-01

    By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p+-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 109 cm × Hz1/2/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

  20. A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

    NASA Astrophysics Data System (ADS)

    Shiota, Koki; Kai, Kazuho; Nagaoka, Shiro; Tsuji, Takuto; Wakahara, Akihiro; Rusop, Mohamad

    2016-07-01

    The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As the result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.

  1. Pharmacological characterisation of the highly NaV1.7 selective spider venom peptide Pn3a.

    PubMed

    Deuis, Jennifer R; Dekan, Zoltan; Wingerd, Joshua S; Smith, Jennifer J; Munasinghe, Nehan R; Bhola, Rebecca F; Imlach, Wendy L; Herzig, Volker; Armstrong, David A; Rosengren, K Johan; Bosmans, Frank; Waxman, Stephen G; Dib-Hajj, Sulayman D; Escoubas, Pierre; Minett, Michael S; Christie, Macdonald J; King, Glenn F; Alewood, Paul F; Lewis, Richard J; Wood, John N; Vetter, Irina

    2017-01-20

    Human genetic studies have implicated the voltage-gated sodium channel NaV1.7 as a therapeutic target for the treatment of pain. A novel peptide, μ-theraphotoxin-Pn3a, isolated from venom of the tarantula Pamphobeteus nigricolor, potently inhibits NaV1.7 (IC50 0.9 nM) with at least 40-1000-fold selectivity over all other NaV subtypes. Despite on-target activity in small-diameter dorsal root ganglia, spinal slices, and in a mouse model of pain induced by NaV1.7 activation, Pn3a alone displayed no analgesic activity in formalin-, carrageenan- or FCA-induced pain in rodents when administered systemically. A broad lack of analgesic activity was also found for the selective NaV1.7 inhibitors PF-04856264 and phlotoxin 1. However, when administered with subtherapeutic doses of opioids or the enkephalinase inhibitor thiorphan, these subtype-selective NaV1.7 inhibitors produced profound analgesia. Our results suggest that in these inflammatory models, acute administration of peripherally restricted NaV1.7 inhibitors can only produce analgesia when administered in combination with an opioid.

  2. Enhancement of magneto-photogalvanic effect in periodic GaAs dot arrays by p-n junctions coupling

    NASA Astrophysics Data System (ADS)

    Zhou, J. K.; Wang, T.; Wang, W.; Chen, S. W.; Cao, Y.; Liu, H. P.; Si, M. S.; Gao, C. X.; Yang, D. Z.; Xue, D. S.

    2016-12-01

    To control the semiconductor device under low magnetic field is still a great challenge for semiconductor magnetoelectronics. In this work, we report the observation of the magneto-photogalvanic effect in periodic GaAs dot arrays. With an increase in magnetic field from 0 to 1500 Oe, the photovoltage increases linearly for a wide temperature range from 80 to 430 K. Compared with GaAs without the dot arrays, periodic GaAs dot arrays have a hundredfold increase of the magnetic-field-modulated photovoltage at room temperature. By changing the magnetic field orientation, the angular dependence of photovoltage reveals that the magneto-photogalvanic effect stems from the Hall electric field caused by optical current, and the enhancement of magneto-photogalvanic effect is attributed to the p-n junction coupling between GaAs dots. When the coupling between the GaAs dots is broken at the high temperatures, i.e., T = 430 K, we demonstrate that the enhancement effect disappears as expected. Our results not only illustrate the magnetic control of energy flow in light harvest, but also provide an applicable way for semiconductor magnetoelectronics by utilizing p-n junction coupling.

  3. High-Affinity α-Conotoxin PnIA Analogs Designed on the Basis of the Protein Surface Topography Method

    PubMed Central

    Kasheverov, Igor E.; Chugunov, Anton O.; Kudryavtsev, Denis S.; Ivanov, Igor A.; Zhmak, Maxim N.; Shelukhina, Irina V.; Spirova, Ekaterina N.; Tabakmakher, Valentin M.; Zelepuga, Elena A.; Efremov, Roman G.; Tsetlin, Victor I.

    2016-01-01

    Despite some success for small molecules, elucidating structure–function relationships for biologically active peptides — the ligands for various targets in the organism — remains a great challenge and calls for the development of novel approaches. Some of us recently proposed the Protein Surface Topography (PST) approach, which benefits from a simplified representation of biomolecules’ surface as projection maps, which enables the exposure of the structure–function dependencies. Here, we use PST to uncover the “activity pattern” in α-conotoxins — neuroactive peptides that effectively target nicotinic acetylcholine receptors (nAChRs). PST was applied in order to design several variants of the α-conotoxin PnIA, which were synthesized and thoroughly studied. Among the best was PnIA[R9, L10], which exhibits nanomolar affinity for the α7 nAChR, selectivity and a slow wash-out from this target. Importantly, these mutations could hardly be delineated by “standard” structure-based drug design. The proposed combination of PST with a set of experiments proved very efficient for the rational construction of new bioactive molecules. PMID:27841338

  4. Yield Surfaces for Anisotropic Plates

    NASA Astrophysics Data System (ADS)

    Walker, J. D.; Thacker, B. H.

    1999-06-01

    Modern aerospace systems are incorporating composite materials into their structures. Often, the composite materials are anisotropic in their mechanical response due to the geometric layout of fibers. For many years, the failure surfaces of anisotropic materials were thought to be characterizable by a quadratic function in the stress, often referred to as a Tsai-Wu yield surface, or, in a more restrictive form, a Tsai-Hill yield surface. Such a representation does not work for materials that are strong in two directions and weak in one direction, which, unfortunately, is the case of most interest since it represents most composite plates. This paper demonstrates the impossibility of modeling the failure surface with both the Tsai-Wu and Tsai-Hill failure surfaces. We then present a yield surface based on the lemniscate, which is quartic in the stress. This new yield surface addresses the case of strong in two directions and weak in one. Calculations with a fragment impacting a composite plate modeled with the new yield surface are presented. Modifications of the yield surface are presented to allow, in a limited way, materials that are both anisotropic and have differing strengths in tension and compression.

  5. Fission yield measurements at IGISOL

    NASA Astrophysics Data System (ADS)

    Lantz, M.; Al-Adili, A.; Gorelov, D.; Jokinen, A.; Kolhinen, V. S.; Mattera, A.; Moore, I.; Penttilä, H.; Pomp, S.; Prokofiev, A. V.; Rakopoulos, V.; Rinta-Antila, S.; Simutkin, V.; Solders, A.

    2016-06-01

    The fission product yields are an important characteristic of the fission process. In fundamental physics, knowledge of the yield distributions is needed to better understand the fission process. For nuclear energy applications good knowledge of neutroninduced fission-product yields is important for the safe and efficient operation of nuclear power plants. With the Ion Guide Isotope Separator On-Line (IGISOL) technique, products of nuclear reactions are stopped in a buffer gas and then extracted and separated by mass. Thanks to the high resolving power of the JYFLTRAP Penning trap, at University of Jyväskylä, fission products can be isobarically separated, making it possible to measure relative independent fission yields. In some cases it is even possible to resolve isomeric states from the ground state, permitting measurements of isomeric yield ratios. So far the reactions U(p,f) and Th(p,f) have been studied using the IGISOL-JYFLTRAP facility. Recently, a neutron converter target has been developed utilizing the Be(p,xn) reaction. We here present the IGISOL-technique for fission yield measurements and some of the results from the measurements on proton induced fission. We also present the development of the neutron converter target, the characterization of the neutron field and the first tests with neutron-induced fission.

  6. UV and visible light synergetic photodegradation using rutile TiO2 nanorod arrays based on a p-n Junction.

    PubMed

    Ji, Tao; Cui, Ze; Zhang, Wenlong; Cao, Yunjiu; Zhang, Yongfang; He, Shu-Ang; Xu, Mingdong; Sun, Yangang; Zou, Rujia; Hu, Junqing

    2017-03-27

    Herein, we report a photocatalytic heterojunction device of rutile TiO2 nanorod arrays based on a p-n silicon junction (TiO2@PN) and its full absorption of ultraviolet and visible light for synergistic photodegradation. The fabricated TiO2@PN had excellent photocatalytic degradation of methyl orange (MO) under irradiation of a 300 W Xe lamp, and its pseudo-first-order rate constant k was 0.221 h(-1), which was greatly higher than that for TiO2 nanorod arrays based on an n-p silicon junction (TiO2@NP, 0.078 h(-1)) and glass (TiO2@G, 0.032 h(-1)). The higher photocatalytic performance of TiO2@PN could be attributed to the fact that the photovoltage (PV) of the p-n junction promotes separation of the electron-hole pairs of the TiO2, and the holes are thus left within the TiO2 nanorods to produce a strong oxidant of hydroxyl radicals (˙OH). Moreover, this heterojunction device could be easily fabricated in a large size for easy recovery and recycling, which shows its promise in the solar-driven degradation of environmental pollution.

  7. Acid soil infertility effects on peanut yields and yield components

    SciTech Connect

    Blamey, F.P.C.

    1983-01-01

    The interpretation of soil amelioration experiments with peanuts is made difficult by the unpredictibility of the crop and by the many factors altered when ameliorating acid soils. The present study was conducted to investigate the effects of lime and gypsum applications on peanut kernel yield via the three first order yield components, pods per ha, kernels per pod, and kernel mass. On an acid medium sandy loam soil (typic Plinthustult), liming resulted in a highly significant kernel yield increase of 117% whereas gypsum applications were of no significant benefit. As indicated by path coefficient analysis, an increase in the number of pods per ha was markedly more important in increasing yield than an increase in either the number of kernels per pod or kernel mass. Furthermore, exch. Al was found to be particularly detrimental to pod number. It was postulated that poor peanut yields resulting from acid soil infertility were mainly due to the depressive effect of exch. Al on pod number. Exch. Ca appeared to play a secondary role by ameliorating the adverse effects of exch. Al.

  8. Controlling Axial p-n Heterojunction Abruptness Through Catalyst Alloying in Vapor-Liquid-Solid Grown Semiconductor Nanowires

    SciTech Connect

    Perea, Daniel E.; Schreiber, Daniel K.; Devaraj, Arun; Thevuthasan, Suntharampillai; Yoo, Jinkyoung; Dayeh, Shadi A.; Picraux, Samuel T.

    2012-07-30

    The p-n junction can be regarded as the most important electronic structure that is responsible for the ubiquity of semiconductor microelectronics today. Efforts to continually scale down the size of electronic components is guiding research to explore the use of nanomaterials synthesized from a bottom-up approach - group-IV semiconductor nanowires being one such material. However, Au-catalyzed synthesis of Si/Si1-x-Gex semiconductor nanowire heterojunctions using the commonly-used vapor-liquid-solid (VLS) growth technique results in diffuse heterojunction interfaces [1], leading to doubts of producing compositionally-sharp p-n junctions using this approach. However, we have recently reported the ability to increase Ge-Si nanowire heterojunction abruptness by VLS synthesis from a Au(1-x)Ga(x) catalyst alloy as shown by EDX analysis in an SEM [2]. In this work, we have extended the use of a AuGa catalyst alloy to produce more compositionally abrupt p-n junction interfaces compared to using pure Au as directly measured by atom probe tomography. As shown in Figure 1(a-b), individual Ge-Si heterostructured nanowires were grown vertically atop Ge(111) microposts. Direct growth on the microposts provides a facile approach to nanowire analysis which circumvents the need to use FIB-based sample preparation techniques. Both nanowires grown from pure Au and a AuGa catalyst alloy were analyzed. The corresponding 3D APT reconstruction of an individual heterostructured nanowire is shown in Figure 1(c) with the corresponding materials labeled. A 1-dimensional composition profile along the analysis direction in Figure 1(d) confirms an increase in heterojunction abruptness for nanowires grown from AuGa (~10nm) compared to nanowires grown from pure Au (~65nm). Analysis of the P distribution within the Si region (Figure 1(e)) indicates that P reaches a constant distribution over approximately 10nm when incorporated through the AuGa catalyst, whereas it continually increases over 100

  9. Photosynthetic characteristics of the subtending leaf of cotton boll at different fruiting branch nodes and their relationships with lint yield and fiber quality

    PubMed Central

    Liu, Jingran; Meng, Yali; Lv, Fengjuan; Chen, Ji; Ma, Yina; Wang, Youhua; Chen, Binglin; Zhang, Lei; Zhou, Zhiguo

    2015-01-01

    To investigate photosynthetic characteristics of the subtending leaf at the 2–3rd and 10–11th fruiting branch (FBN, FB2–3, and FB10–11), and their relationship with cotton yield and quality, field experiments were conducted using two cotton cultivars, Kemian 1 and Sumian 15. The results showed that with FBN increasing, chlorophyll (Chl) components, Pn and non-photochemical quenching (NPQ) in the subtending leaf significantly declined, while soluble sugar, amino acid and their ratio (CSS/CAA) as well as Fv/Fm increased. These results indicated that (1) non-radiative dissipation of excess light energy at FB2–3 was reduced to improve solar energy utilization efficiency to compensate for lower Pn, (2) higher NPQ at FB10−11 played a role in leaf photo-damage avoidance, (3) boll weight was related to the CSS/CAA ratio rather than carbohydrates content alone, (4) with FBN increasing, lint biomass and lint/seed ratio increased significantly, but lint yield decreased due to lower relative amount of bolls, and (5) the decreases in Pn, sucrose content and CSS/CAA in the subtending leaf at FB2–3 resulted in lower boll weight and fiber strength. PMID:26442060

  10. [Flag leaf photosynthetic characteristics, change in chlorophyll fluorescence parameters, and their relationships with yield of winter wheat sowed in spring].

    PubMed

    Xu, Lan; Gao, Zhi-qang; An, Wei; Li, Yan-liang; Jiao, Xiong-fei; Wang, Chuang-yun

    2016-01-01

    With five good winter wheat cultivars selected from the middle and lower reaches of Yangtze River and Southwest China as test materials, a field experiment in Xinding basin area of Shanxi Province was conducted to study the photosynthetic characteristics, chlorophyll content, and chlorophyll fluorescence parameters of flag leaf at different sowing dates, as well as the correlations between these indices and yield for two years (2013-2014). The results showed that the difference in most fluorescence parameters except chlorophyll content among cultivars was significant. The correlations between these fluorescence parameters and yield were significant. The variation coefficient of chlorophyll (Chl) content was low (0.12-0.17), and that of performance index based on absorption (PIabs) was high (0.32-0.39), with the partial correlation coefficients of them with grain yield from 2013 to 2014 ranged in 0.70-0.81. Under the early sowing condition, the grain yield positively correlated with PIabs at flowering and filling stages and chlorophyll content at grain filling stage, but negatively correlated with the relative variable fluorescence at I point (Vi) at grain filling stage. About 81.1%-82.8% of grain yield were determined by the variations of PIabs, Chl, and Vi. Wheat cultivars had various performances in the treatments with different sowing dates and a consistent trend was observed in the two experimental years. Among these 5 cultivars, Yangmai 13 was suitable for early sowing, with the flag leaf photosynthetic rate (Pn), Chl, most fluorescence parame-ters, and grain yield showed obviously high levels. In conclusion, under early sowing condition chlorophyll content at grain filling stages, PIabs at flowering and filling stages, and Pn were important indices for selecting wheat cultivars with high photosynthetic efficiency.

  11. The Expression of TaRca2-α Gene Associated with Net Photosynthesis Rate, Biomass and Grain Yield in Bread Wheat (Triticum aestivum L.) under Field Conditions

    PubMed Central

    Saeed, Iqbal; Bachir, Daoura Goudia; Chen, Liang; Hu, Yin-Gang

    2016-01-01

    Improvement in activation of Rubisco by Rubisco activase can potentially enhance CO2 assimilation and photosynthetic efficiency in plants. The three homoeologous copies of TaRca2-α were identified on chromosomes 4AL, 4BS and 4DS (TaRca2-α-4AL, TaRca2-α-4BS, and TaRca2-α-4DS) in bread wheat. Expression patterns of the three copies at heading (Z55), anthesis (Z67) and grain-filling (Z73) stages were investigated through qRT-PCR analyses in a panel of 59 bread wheat genotypes and their effects on net photosynthesis rate (Pn), biomass plant-1 (BMPP) and grain yield plant-1 (GYPP) were further explored. Different but similar expression patterns were observed for the three copies of TaRca2-α at the three growth stages with highest expression at grain-filling stage. TaRca2-α-4BS expressed higher at the three stages than TaRca2-α-4AL and TaRca2-α-4DS. The 59 genotypes could be clustered into three groups as high (7 genotypes), intermediate (41 genotypes) and low (11 genotypes) expression based on the expression of the three copies of TaRca2-α at three growth stages. Significant variations (P<0.01) were observed among the three groups of bread wheat genotypes for Pn, BMPP and GYPP. Generally, the genotypes with higher TaRca2-α expression also showed higher values for Pn, BMPP and GYPP. The expressions of the three copies of TaRca2-α at heading, anthesis and grain-filling stages were positively correlated with Pn, BMPP and GYPP (P<0.01) with stronger association for TaRca2-α-4BS at grain-filling stage. These results revealed that the expression of TaRca2-α contribute substantially to Pn, BMPP and GYPP, and suggested that manipulating TaRca-α expression may efficiently improve Pn, BMPP and GYPP in bread wheat and detecting TaRca-α expression levels with emphasis on TaRca2-α-4BS may be a positive strategy for selection in improving photosynthetic efficiency and grain yield of bread wheat. PMID:27548477

  12. A comparative study of p(+)n and n(+)p InP solar cells made by a closed ampoule diffusion

    NASA Technical Reports Server (NTRS)

    Faur, M.; Faur, M.; Flood, D. J.; Weinberg, I.; Brinker, D. J.; Goradia, C.; Fatemi, N.; Goradia, M.; Thesling, W.

    1991-01-01

    The purpose was to demonstrate the possibility of fabricating thermally diffused p(+)n InP solar cells having high open-circuit voltage without sacrificing the short circuit current. The p(+)n junctions were formed by closed-ampoule diffusion of Cd through a 3 to 5 nm thick anodic or chemical phosphorus-rich oxide cap layer grown on n-InP:S Czochralski LEC grown substrates. For solar cells made by thermal diffusion the p(+)n configuration is expected to have a higher efficiency than the n(+)p configuration. It is predicted that the AM0, BOL efficiencies approaching 19 percent should be readily achieved providing that good ohmic front contacts could be realized on the p(+) emitters of thickness lower than 1 micron.

  13. Gate voltage dependent characteristics of p-n diodes and bipolar transistors based on multiwall CN(x)/carbon nanotube intramolecular junctions.

    PubMed

    Zhang, W J; Zhang, Q F; Chai, Y; Shen, X; Wu, J L

    2007-10-03

    The electrical transport characteristics of multiwall CN(x)/carbon nanotube intramolecular junctions were studied. The junctions could be used as diodes. We found that the rectification resulted from p-n junctions, not from metal-semiconductor junctions. The gate effect was very weak when the diodes were reverse biased. At forward bias, however, some of the p-n diodes could be n-type transistors. Experimental results supported the opinion that the gate voltage dependent property is derived from the Schottky barrier between the CN(x) part and the electrode. Using p-n diodes, a bipolar transistor with nanoscale components was built, whose behavior was very similar to that of a conventional planar bipolar transistor.

  14. Cu2ZnSnS4 (CZTS) nanoparticle based nontoxic and earth-abundant hybrid pn-junction solar cells.

    PubMed

    Saha, Sudip K; Guchhait, Asim; Pal, Amlan J

    2012-06-14

    A heterojunction between a layer of CZTS nanoparticles and a layer of fullerene derivatives forms a pn-junction. We have used such an inorganic-organic hybrid pn-junction device for solar cell applications. As routes to optimize device performance, interdot separation has been reduced by replacing long-chain ligands of the quantum dots with short-chain ligands and thickness of the CZTS layer has been varied. We have shown that the CZTS-fullerene interface could dissociate photogenerated excitons due to the depletion region formed at the pn-junction. From capacitance-voltage characteristics, we have determined the width of the depletion region, and compared it with the parameters of devices based on the components of the heterojunction. The results demonstrate solar cell applications based on nontoxic and earth-abundant materials.

  15. Increasing crude tall oil yield

    SciTech Connect

    Gupta, J.

    1983-10-01

    In the kraft pulping process for softwoods and hardwood, tall oil recovery is an important part of making profit. During the past 10 years, crude tall oil (CTO) production in the U.S. and Canada has dropped. Estimated CTO yield from fresh Canadian pine is 36-40 lb/a.d. ton and from Southern U.S. 70-80 lb/a.d. ton, while the average yield of CTO is approximately 40% of available tall oil in pine wood. Besides low yield, many pulp mills fail to achieve a CTO quality that lives up to market expectations. The moisture content of CTO is reported to vary widely (1.5-3.5%), whereas it should not exceed 1.5% for marketable quality. The acid number of CTO varies in the range of 135 to 150, whereas industry standards are 145-150. At present the average sale price of CTO is approximately $150/ton. By upgrading existing plants, the yield can be increased, resulting in additional revenues. Thus, if a batch acidulation plant is replaced by a continuous acidulation plant, the yield will increase by approximately 15-50%. The capital required for installing a continuous system is approximately $1.1-1.5 million for a 500-a.d. ton/day pulp mill, requiring a payback period of approximatley 5-7 years. 7 references.

  16. Status of fission yield data

    SciTech Connect

    England, T.R.; Blachot, J.

    1988-01-01

    In this paper we summarize the current status of the recent US evaluation for 34 fissioning nuclides at one or more neutron incident energies and for spontaneous fission. Currently there are 50 yields sets, and for each we have independent and cumulative yields and uncertainties for approximately 1100 fission products. When finalized the recommended data will become part of Version VI of the US ENDF/B. Other major evaluations in progress that are included in a recently formed IAEA Coordinated Research Program are also summarized. In a second part we review two empirical models in use to estimate independent yields. Comparison of model estimates with measured data is presented, including a comparison with some recent data obtained from Lohengrin (Cf-249 T). 18 refs., 13 figs., 3 tabs.

  17. Yield statistics of interpolated superoscillations

    NASA Astrophysics Data System (ADS)

    Katzav, Eytan; Perlsman, Ehud; Schwartz, Moshe

    2017-01-01

    Yield optimized interpolated superoscillations have been recently introduced as a means for possibly making the use of the phenomenon of superoscillation practical. In this paper we study how good is a superoscillation that is not optimal. Namely, by how much is the yield decreased when the signal departs from the optimal one. We consider two situations. One is the case where the signal strictly obeys the interpolation requirement and the other is when that requirement is relaxed. In the latter case the yield can be increased at the expense of deterioration of signal quality. An important conclusion is that optimizing superoscillations may be challenging in terms of the precision needed, however, storing and using them is not at all that sensitive. This is of great importance in any physical system where noise and error are inevitable.

  18. Evaluation of the minority carrier diffusion length and surface-recombination velocity in GaAs p/n solar cells

    NASA Technical Reports Server (NTRS)

    Hakimzadeh, Roshanak; Moeller, Hans J.; Bailey, Sheila

    1991-01-01

    The minority carrier diffusion length (Lp) and the surface recombination velocity (Vs) were measured as a function of distance (x) from the p-n junction in GaAs p/n concentrator solar cells. The measured Vs values were used in a theoretical expression for the normalized electron-beam-induced current. A fitting procedure was then used to fit this expression with experimental values to obtain Lp. The results show that both Vs and Lp vary with x. Lp measured in irradiated cells showed a marked reduction. These values were compared to those measured previously which did not account for Vs.

  19. Giant electric field modulation of double exchange ferromagnetism at room temperature in the perovskite manganite/titanate p-n junction.

    PubMed

    Tanaka, Hidekazu; Zhang, Jun; Kawai, Tomoji

    2002-01-14

    We report on the electrical modulation of double exchange ferromagnetism at room temperature in hole-doped manganites of a metal oxide p-n junction. In this (La0.9Ba0.1)MnO(3)/Nb doped SrTiO3 p-n junction, the temperature dependence of the junction resistance shows a metal-insulator transition whose temperature, corresponding to that of ferromagnetic transition, is hugely modulated from 290 to 340 K by a bias voltage increasing from +1.0 to +1.8 V. The magnetoresistance can also be modulated electrically.

  20. Fission Reaction Event Yield Algorithm

    SciTech Connect

    Hagmann, Christian; Verbeke, Jerome; Vogt, Ramona; Roundrup, Jorgen

    2016-05-31

    FREYA (Fission Reaction Event Yield Algorithm) is a code that simulated the decay of a fissionable nucleus at specified excitation energy. In its present form, FREYA models spontaneous fission and neutron-induced fission up to 20 MeV. It includes the possibility of neutron emission from the nuclear prior to its fussion (nth chance fission).

  1. In-Operando Spatial Imaging of Edge Termination Electric Fields in GaN Vertical p-n Junction Diodes

    SciTech Connect

    Leonard, Francois; Dickerson, J. R.; King, M. P.; Armstrong, A. M.; Fischer, A. J.; Allerman, A. A.; Kaplar, R. J.; Talin, A. Albert

    2016-05-03

    Control of electric fields with edge terminations is critical to maximize the performance of high-power electronic devices. We proposed a variety of edge termination designs which makes the optimization of such designs challenging due to many parameters that impact their effectiveness. And while modeling has recently allowed new insight into the detailed workings of edge terminations, the experimental verification of the design effectiveness is usually done through indirect means, such as the impact on breakdown voltages. In this letter, we use scanning photocurrent microscopy to spatially map the electric fields in vertical GaN p-n junction diodes in operando. We also reveal the complex behavior of seemingly simple edge termination designs, and show how the device breakdown voltage correlates with the electric field behavior. Modeling suggests that an incomplete compensation of the p-type layer in the edge termination creates a bilayer structure that leads to these effects, with variations that significantly impact the breakdown voltage.

  2. Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting

    NASA Astrophysics Data System (ADS)

    Xiyuan, Wang; Yongguang, Huang; Dewei, Liu; Xiaoning, Zhu; Xiao, Cui; Hongliang, Zhu

    2013-06-01

    Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting (PLM). P type silicon wafers were implanted with 245 keV 126Te+ to a dose of 2 × 1015 ions/cm2, after a PLM process (248 nm, laser fluence of 0.30 and 0.35 J/cm2, 1-5 pulses, duration 30 ns), an n+ type single crystalline tellurium supersaturated silicon layer with high carrier density (highest concentration 4.10 × 1019 cm-3, three orders of magnitude larger than the solid solution limit) was formed, it shows high broadband optical absorption from 400 to 2500 nm. Current—voltage measurements were performed on these diodes under dark and one standard sun (AM 1.5), and good rectification characteristics were observed. For present results, the samples with 4-5 pulses PLM are best.

  3. Nano LaAlO3 buffer layer-assisted tunneling current in manganite p-n heterojunction

    NASA Astrophysics Data System (ADS)

    Ma, Jun-Jie; Wang, Deng-Jing; Huang, Hai-Lin; Wang, Ru-Wu; Li, Yun-Bao

    2015-10-01

    An oxide p-n heterojunction composed of a 150-nm La0.67Ca0.33MnO3 (LCMO) film, 0.05 wt% Nb doped SrTiO3 substrate (STON), and sandwiched 5-nm LaAlO3 (LAO) thin film is fabricated with the pulsed laser deposition technique and the interfacial transport properties are experimentally studied. The rectifying behavior of the junction is in agreement with Newman’s equation, indicating that tunneling is the dominant process for the carriers to pass through the interface while thermal emission is the dominant transport model of an LCMO/STON heterojunction with no LAO buffer layer. Project supported by the National Natural Science Foundation of China (Grant No. 10804089).

  4. High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Fazi, Christian

    1996-01-01

    We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.

  5. Through space and through bridge channels of charge transfer at p-n nano-junctions: A DFT study

    NASA Astrophysics Data System (ADS)

    Dandu, Naveen; Tretiak, Sergei; Kilina, Svetlana; Kilin, Dmitri

    2016-12-01

    Details of charge density distribution at p-n nano interface are analyzed with density functional theory techniques using model system of dimers of doped silicon quantum dots interacting through bond and through space. Spatial distributions of transition densities between the ground and excited states suggest the character of essential electronic excitations, which have a Fӧrster, bound, unbound, or charge transfer character. A redistribution of electronic density from n-impurities to p-impurities results in a ground state polarization and creates an offset of energies of the bands localized on p-doped quantum dot and the bands localized on n-doped quantum dot. Although impurities contribute very few orbitals to the total density, a ground state charge redistribution and polarization are both responsible for the presence of a large number of charge transfer excitations involving solely silicon orbitals.

  6. Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions

    NASA Astrophysics Data System (ADS)

    Barrett, N.; Gottlob, D. M.; Mathieu, C.; Lubin, C.; Passicousset, J.; Renault, O.; Martinez, E.

    2016-05-01

    Significant progress in the understanding of surfaces and interfaces of materials for new technologies requires operando studies, i.e., measurement of chemical, electronic, and magnetic properties under external stimulus (such as mechanical strain, optical illumination, or electric fields) applied in situ in order to approach real operating conditions. Electron microscopy attracts much interest, thanks to its ability to determine semiconductor doping at various scales in devices. Spectroscopic photoelectron emission microscopy (PEEM) is particularly powerful since it combines high spatial and energy resolution, allowing a comprehensive analysis of local work function, chemistry, and electronic structure using secondary, core level, and valence band electrons, respectively. Here we present the first operando spectroscopic PEEM study of a planar Si p-n junction under forward and reverse bias. The method can be used to characterize a vast range of materials at near device scales such as resistive oxides, conducting bridge memories and domain wall arrays in ferroelectrics photovoltaic devices.

  7. Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions.

    PubMed

    Barrett, N; Gottlob, D M; Mathieu, C; Lubin, C; Passicousset, J; Renault, O; Martinez, E

    2016-05-01

    Significant progress in the understanding of surfaces and interfaces of materials for new technologies requires operando studies, i.e., measurement of chemical, electronic, and magnetic properties under external stimulus (such as mechanical strain, optical illumination, or electric fields) applied in situ in order to approach real operating conditions. Electron microscopy attracts much interest, thanks to its ability to determine semiconductor doping at various scales in devices. Spectroscopic photoelectron emission microscopy (PEEM) is particularly powerful since it combines high spatial and energy resolution, allowing a comprehensive analysis of local work function, chemistry, and electronic structure using secondary, core level, and valence band electrons, respectively. Here we present the first operando spectroscopic PEEM study of a planar Si p-n junction under forward and reverse bias. The method can be used to characterize a vast range of materials at near device scales such as resistive oxides, conducting bridge memories and domain wall arrays in ferroelectrics photovoltaic devices.

  8. A radioreceptor assay for determination of nicardipine in human serum using 3H(+)PN 200-110 as radioligand

    SciTech Connect

    Gerbeau, C.; Barradas, J. )

    1990-01-01

    A radioreceptor assay for the determination of nicardipine in human serum using the active enantiomer 3H(+)PN 200-110 as radioligand is described. The assay is simple to perform, of low cost and requires only a small volume of serum. The standard curve permits measurements in the range 2.5 to 320 nM nicardipine (i.e. 1.2 to 153 ng/ml). The precision and the reproducibility of the method, evaluated from two different concentrations: 120 and 12 nM, show coefficients of variation for within and between assays, of 6% and 15% and 6% and 9%, respectively. Concentrations of nicardipine from 3 ng/ml could be measured with a satisfactory precision. The performances of the method permit the determination of nicardipine concentrations reached after therapeutic administration. Other dihydropyridine calcium channel antagonists may be measured using this assay if these compounds are used to generate the standard curves.

  9. Performance optimization of p-n homojunction nanowire-based piezoelectric nanogenerators through control of doping concentration

    SciTech Connect

    Liu, Guocheng Ban, Dayan; Abdel-Rahman, Eihab

    2015-09-07

    This paper demonstrates a series of flexible transparent ZnO p-n homojunction nanowire-based piezoelectric nanogenerators (NGs) with different p-doping concentrations. The lithium-doped segments are grown directly and consecutively on top of intrinsic nanowires (n-type). When characterized under cyclic compressive strains, the overall NG performance is enhanced by up to eleven-fold if the doping concentration is properly controlled. This improvement is attributable to reduction in the mobile charge screening effect and optimization of the NGs' internal electrical characteristics. Experimental results also show that an interfacial MoO{sub 3} barrier layer, at an optimized thickness of 5–10 nm, reduces leakage current and substantially improves piezoelectric NG performance.

  10. Toward direct light-to-digital conversion using a pulse-driven hybrid MOS-PN photodetector.

    PubMed

    Sallin, Denis; Koukab, Adil; Kayal, Maher

    2015-02-15

    In this Letter, a direct light-to-digital converter based on an MOS-PN photodetector driven by pulsed voltage is presented. The objective is to avoid any analog-to-digital or time-to-digital conversion and, thereby, to pave the way for a new generation of fully digital imaging sensors with reduced complexity, area, and power consumption. Moreover, the pulsed voltage operation allows for a significant reduction of the dark level. The concept is validated by a theoretical study and TCAD simulations. A first prototype fabricated in 0.18 μm CMOS technology is presented. The experimental results under various light conditions show that the pulsed voltage improves the light sensitivity by several orders of magnitude.

  11. Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P(+)N Junction Rectifiers

    NASA Technical Reports Server (NTRS)

    Neudeck, P. G.; Huang, W.; Dudley, M.

    1998-01-01

    It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector greater than 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p(+)n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p(+)n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

  12. Hydrogen chemistry of ruthenium complexes containing one chelating (P-P) or (P-N) ligand per Ru atom

    SciTech Connect

    James, B.

    1995-12-01

    Hydrogenation catalysts are of interest to a variety of fields such as fuels preparation. This report describes a hydrogenation catalysts concerning ruthenium. The most versatile hydrogenation catalysts appear to be based on Ru(P-P) species containing one chelating ditertiaryphosphine(P-P) ligand per metal, particularly for asymmetric hydrogenation when (P-P) is chiral. We have studied the interaction of H{sub 2} with, and catalytic hydrogenation activity (toward olefins ketones, nitrites and imines) of, systems containing the {open_quote}RuCl{sub 2}(P-P){close_quote} moiety or corresponding chelating (P-N) ligands where N is a tertiary amine. Variation in conditions leads to detection or isolation of, for example, ({eta}{sup 2}-H{sub 2})(P-P)Ru({mu}-Cl){sub 3}RuCl(P-P) (1), ({eta}{sup 2}-H{sub 2})(P-P)Ru({mu}-Cl){sub 2}({mu}-H)Ru(H)(P-P) (2), and [Ru(H)Cl(P-P)]{sub 3} (3), as well as analogous species where the {eta}{sup 2}-H{sub 2} of 1 or 2 is replaced by olefin, ketone, nitrile, or imine. The connectivity between 1-3, and kinetic and mechanistic details of selected catalytic hydrogenations will be discussed. Within (P-N) systems, the mononuclear species ({eta}{sup 2}-H{sub 2})RuCl{sub 2}(P-N)(PR{sub 3}) and Ru(H)Cl(P-N)(PR{sub 3}) are formed (R = Ph or p-tolyl), as well as species analogous to 2.

  13. Catalysis of hydrolysis and nucleophilic substitution at the P-N bond of phosphoimidazolide-activated nucleotides in phosphate buffers

    NASA Technical Reports Server (NTRS)

    Kanavarioti, A.; Rosenbach, M. T.

    1991-01-01

    Phosphoimidazolide-activated derivatives of guanosine and cytidine 5'-monophosphates, henceforth called ImpN's, exhibit enhanced rates of degradation in the presence of aqueous inorganic phosphate in the range 4.0 < or = pH < or = 8.6. This degradation is been attributed to (i) nucleophilic substitution of the imidazolide and (ii) catalysis of the P-N bond hydrolysis by phosphate. The first reaction results in the formation of nucleoside 5'-diphosphate and the second in nucleoside 5'-monophosphate. Analysis of the observed rates as well as the product ratios as a function of pH and phosphate concentration allow distinction between various mechanistic possibilities. The results show that both H2PO4- and HPO4(2-) participate in both hydrolysis and nucleophilic substitution. Statistically corrected biomolecular rate constants indicate that the dianion is 4 times more effective as a general base than the monoanion, and 8 times more effective as nucleophile. The low Bronsted value beta = 0.15 calculated for these phosphate species, presumed to act as general bases in facilitating water attack, is consistent with the fact that catalysis of the hydrolysis of the P-N bond in ImpN's has not been detected before. The beta nuc = 0.35 calculated for water, H2PO4-, HPO4(2-), and hydroxide acting as nucleophiles indicates a more associative transition state for nucleotidyl (O2POR- with R = nucleoside) transfers than that observed for phosphoryl (PO3(2-)) transfers (beta nuc = 0.25). With respect to the stability/reactivity of ImpN's under prebiotic conditions, our study shows that these materials would not suffer additional degradation due to inorganic phosphate, assuming the concentrations of phosphate, Pi, on prebiotic Earth were similar to those in the present oceans ([Pi] approximately 2.25 micromoles).

  14. Evaluation of a cotton stripper yield monitor

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The objective of this work was to evaluate the accuracy of a microwave sensor based yield monitor for measuring yield on a cotton stripper harvester and determine if the yield monitor can discriminate differences in yield to the same level as a reference scale system. A new yield monitor was instal...

  15. Integrated Advanced Microwave Sounding Unit-A(AMSU-A). Engineering Test Report: METSAT A1 Signal Processor, (P/N 1331670-2, S /N F05)

    NASA Technical Reports Server (NTRS)

    Lund, D.

    1998-01-01

    This report presents a description of the tests performed, and the test data, for the AI METSAT Signal Processor Assembly P/N 1331670-2, S/N F05. The assembly was tested in accordance with AE-26754, "METSAT Signal Processor Scan Drive and Integration Procedure." The objective is to demonstrate functionality of the signal processor prior to instrument integration.

  16. Finite mobility effects on the radiative efficiency limit of pn -junction solar cells

    NASA Astrophysics Data System (ADS)

    Mattheis, Julian; Werner, Jürgen H.; Rau, Uwe

    2008-02-01

    The maximum power conversion efficiency of a solar cell as defined by the Shockley-Queisser (SQ) radiative recombination limit relies on the assumption that the collection probability for all photogenerated electron/hole pairs is unity. This assumption implies a virtually infinite mobility μn of the photogenerated charge carriers. In order to compute the radiative efficiency limit with finite mobilities, we solve the continuity equation for minority carrier transport including an additional photon recycling term that accounts for emission of photons by radiative recombination and their subsequent reabsorption. This approach quantitatively connects the SQ approach with the classical diode theory. Even when assuming radiative recombination as the only loss mechanism, the maximum efficiency achievable within our model is reduced drastically when μn drops below a critical value. This critical value depends on the absorption coefficient, the doping density of the absorber material, as well as on the thickness and the light trapping scheme of the solar cell. Thus, these material and device parameters gain a fundamental importance as soon as finite carrier mobility is considered. Our theory yields a criterion that has to be fulfilled by any photovoltaic material in order to guarantee charge separation even in an otherwise most ideal case. Exemplary application of our model to three real photovoltaic materials, crystalline silicon (c-Si) , amorphous silicon (a-Si:H) , as well as Cu(In,Ga)Se2 (CIGS), shows that mobilities of c-Si and CIGS are three, respectively, 1 order of magnitude above this critical limit whereas the effective hole mobilities in a-Si:H are scattered around the critical value. A comparison between solar cells and light-emitting diodes with finite mobility and finite nonradiative lifetime reveals that materials for these complementary devices have to fulfill different requirements.

  17. Safety and immunogenicity of CRM197-conjugated pneumococcal-meningococcal C combination vaccine (9vPnC-MnCC) whether given in two or three primary doses.

    PubMed

    Sigurdardottir, Sigurveig Th; Davidsdottir, Katrin; Arason, Vilhjalmur A; Jonsdottir, Olof; Laudat, France; Gruber, William C; Jonsdottir, Ingileif

    2008-08-05

    This randomized trial compares safety and immunogenicity when vaccinating infants with a pneumococcal-meningococcal conjugate vaccine in two doses vs. three doses. Infants (N=223) received 9vPnC-MnCC (CRM197-conjugated pneumococcal serotypes 1, 4, 5, 6B, 9V, 14, 18C, 19F, 23F and meningococcal C polysaccharides) either at 3 and 5 or 3, 4 and 5 months and a booster with either 9vPnC-MnCC or 23-valent pneumococcal-polysaccharide vaccine (23vPPS) and CRM197-MnCC, at 12 months. Safety was monitored and IgG measured at 3, 6, 12 and 13 months in all subjects and serum bactericidal activity (SBA) in half. The 9vPnC-MnCC vaccine was safe and induced significant IgG to all components. Three doses induced higher antibody GMCs (geometric mean concentrations) at 6 months to seven of nine pneumococcal serotypes. This was most significant for 6B and 23F (p<0.001), that also showed lower rate of responders>0.35 (6B, 23F) and >0.5 microg/mL (6B). Antibody GMCs remained lower following 9vPnC-MnCC booster in subjects primed with two doses although only significant for serotype 18C. Significant memory responses were observed 1 week after the 23vPPS toddler dose. MnCC-IgG GMC was lower after two doses, however with comparable SBA. This study shows that the 9vPnC-MnCC vaccine is safe and induces successful immunological memory, whether given in two or three primary doses.

  18. Increase in ( sup 3 H)PN 200-110 binding to cardiac muscle membrane in streptozocin-induced diabetic rats

    SciTech Connect

    Nishio, Y.; Kashiwagi, A.; Ogawa, T.; Asahina, T.; Ikebuchi, M.; Kodama, M.; Shigeta, Y. )

    1990-09-01

    Voltage-sensitive Ca2+ channels in cardiac left ventricular muscle membranes isolated from nondiabetic control and diabetic rats were measured with (3H)PN 200-110, a dihydropyridine derivative, as a ligand. The binding site (Bmax) of (3H)PN 200-110 in cardiac membranes isolated from streptozocin-induced diabetic (STZ-D) rats (128 +/- 10 fmol/mg protein) significantly (P less than 0.01) increased by 64% compared with that of control rats (78 +/- 4 fmol/mg protein) 10 wk after STZ administration without a significant change in Kd. However, the significant increase in Bmax of (3H)PN 200-110 binding in diabetic rats depended on the duration of diabetes such that the increase was not found until 6 wk after STZ injection. An 8-wk intensive insulin treatment, which was initiated 2 wk after STZ injection, normalized the increase in (3H)PN 200-110 binding in STZ-D rats to control levels (85 +/- 4 fmol/mg protein). Furthermore, (3H)PN 200-110 binding to control cardiac membranes was dose-dependently inhibited in the presence of verapamil, a phenylalkylamine Ca2+ antagonist, but that was not the case in cardiac membranes isolated from STZ-D rats. These results indicate that voltage-sensitive Ca2+ channels in cardiac muscle isolated from STZ-D rats are quantitatively and qualitatively altered, because the course of diabetes and the increase in the channels can be prevented by treatment with insulin.

  19. Science Yield Modeling with EXOSIMS

    NASA Astrophysics Data System (ADS)

    Garrett, Daniel; Savransky, Dmitry

    2016-01-01

    Accurately modeling science yield of an exoplanet direct imaging mission to build confidence in the achievement of science goals can be almost as complicated as designing the mission itself. It is challenging to compare science simulation results and systematically test the effects of changing instrument or mission designs. EXOSIMS (Exoplanet Open-Source Imaging Mission Simulator) addresses this by generating ensembles of mission simulations for exoplanet direct imaging missions to estimate distributions of science yield. EXOSIMS consists of stand-alone modules written in Python which may be individually modified without requiring modifications to the code elsewhere. This structure allows for user driven systemic exploration of the effects of changing designs on the estimated science yield.The modules of EXOSIMS are classified as either input or simulation modules. Input modules contain specific mission design parameters and functions. These include Planet Population, Star Catalog, Optical System, Zodiacal Light, Planet Physical Model, Observatory, Time Keeping, and Post-Processing. Simulation modules perform tasks requiring input from one or more input modules as well as calling functions from other simulation modules. These include Completeness, Target List, Simulated Universe, Survey Simulation, and Survey Ensemble. The required parameters and functionality of each of these modules is defined in the documentation for EXOSIMS.EXOSIMS is available to the public at https://github.com/dsavransky/EXOSIMS. Included in the documentation is an interface control document which defines the required inputs and outputs to each input and simulation module. Future development of EXOSIMS is intended to be community-driven. Mission planners and instrument designers may quickly write their own modules, following the guidelines in the interface control document, and drop them directly into the code without making additional modifications elsewhere. It is expected that EXOSIMS

  20. Electron yields from spacecraft materials

    NASA Technical Reports Server (NTRS)

    Yang, K.; Gordon, W. L.; Hoffman, R. W.

    1985-01-01

    Photoyields and secondary electron emission (SEE) characteristics were determined under UHV conditions for a group of insulating materials used in spacecraft applications. The SEE studies were carried out with a pulsed primary beam while photoyields were obtained with a chopped photon beam from a Kr resonance source with major emission at 123.6 nm. This provides a photon flux close to that of the Lyman alpha in the space environment. Yields per incident photon are obtained relative to those from a freshly evaporated and air oxidized Al surface. Results are presented for Kapton, FEP Teflon, the borosilicate glass covering of a shuttle tile, and spacesuit outer fabric.

  1. [Effects of elevated rhizosphere CO2 concentration on the photosynthetic characteristics, yield, and quality of muskmelon].

    PubMed

    Liu, Yi-Ling; Sun, Zhou-Ping; Li, Tian-Lai; Gu, Feng-Ying; He, Yu

    2013-10-01

    By using aeroponics culture system, this paper studied the effects of elevated rhizosphere CO2 concentration on the leaf photosynthesis and the fruit yield and quality of muskmelon during its anthesis-fruiting period. In the fruit development period of muskmelon, as compared with those in the control (350 microL CO2 x L (-1)), the leaf chlorophyll content, net photosynthetic rate (Pn), stomatal conductance (Gs), intercellular CO2 concentration (Ci), and the maximal photochemical efficiency of PS II (Fv/Fm) in treatments 2500 and 5000 microL CO2 x L(-1) decreased to some extents, but the stomatal limitation value (Ls) increased significantly, and the variation amplitudes were larger in treatment 5000 microL CO2 x L(-1) than in treatment 2500 microL CO2 x L(-1). Under the effects of elevated rhizosphere CO2 concentration, the fruit yield per plant and the Vc and soluble sugar contents in fruits decreased markedly, while the fruit organic acid content was in adverse. It was suggested that when the rhizosphere CO2 concentration of muskmelon during its anthesis-fruiting period reached to 2500 microL x L(-1), the leaf photosynthesis and fruit development of muskmelon would be depressed obviously, which would result in the decrease of fruit yield and quality of muskmelon.

  2. Association of GUCY2C Expression in Lymph Nodes and Time to Recurrence and Disease-Free Survival in pN0 Colorectal Cancer

    PubMed Central

    Waldman, Scott A.; Hyslop, Terry; Schulz, Stephanie; Barkun, Alan; Nielsen, Karl; Haaf, Janis; Bonaccorso, Christine; Li, Yanyan; Weinberg, David S.

    2009-01-01

    Context The established relationship between lymph node metastasis and prognosis in colorectal cancer suggests that recurrence in 25% of patients with lymph nodes free of tumor cells by histopathology (pN0) reflects the presence of occult metastases. GUCY2C is a marker expressed by colorectal tumors that could reveal occult metastases in lymph nodes and better estimate recurrence risk. Objective To examine the association of occult lymph node metastases detected by quantifying GUCY2C mRNA, employing the reverse transcriptase-polymerase chain reaction, with recurrence and survival in patients with colorectal cancer. Design, Setting, and Participants Prospective enrollment of 257 patients with pN0 colorectal cancer enrolled between March 2002 and June 2007 at 9 centers provided 2,570 fresh lymph nodes ≥5 mm for histopathology and GUCY2C mRNA analysis. Patients were followed for a median of 24 months (range: 2–63) for disease recurrence or death. Main Outcome Measures Time to recurrence (primary outcome) and disease-free survival (secondary outcome) relative to expression of GUCY2C in lymph nodes. Results Thirty-two (12.5%) patients had lymph nodes negative for GUCY2C [pN0(mol−)], and all but two remained free of disease during follow-up (recurrence rate 6.3% [95%CI 0.8–20.8%]). Conversely, 225 (87.5%) patients had lymph nodes positive for GUCY2C [pN0(mol+)], and 47 (20.9% [15.8–26.8%]) developed recurrent disease (p=0.006). Multivariable analyses revealed that GUCY2C in lymph nodes was an independent marker of prognosis. Patients who were pN0(mol+) exhibited earlier time to recurrence (adjusted hazard ratio 4.66 [1.11–19.57]; p=0.035) and reduced disease-free survival (adjusted hazard ratio 3.27 [1.15–9.29]; p=0.026). Conclusion Expression of GUCY2C in histologically negative lymph nodes appears to be independently associated with time to recurrence and disease-free survival in patients with pN0 colorectal cancer. PMID:19224751

  3. Differential effects of the recombinant toxin PnTx4(5-5) from the spider Phoneutria nigriventer on mammalian and insect sodium channels.

    PubMed

    Paiva, Ana L B; Matavel, Alessandra; Peigneur, Steve; Cordeiro, Marta N; Tytgat, Jan; Diniz, Marcelo R V; de Lima, Maria Elena

    2016-02-01

    The toxin PnTx4(5-5) from the spider Phoneutria nigriventer is extremely toxic/lethal to insects but has no macroscopic behavioral effects observed in mice after intracerebral injection. Nevertheless, it was demonstrated that it inhibits the N-methyl-d-aspartate (NMDA) - subtype of glutamate receptors of cultured rat hippocampal neurons. PnTx4(5-5) has 63% identity to PnTx4(6-1), another insecticidal toxin from P. nigriventer, which can slow down the sodium current inactivation in insect central nervous system, but has no effect on Nav1.2 and Nav1.4 rat sodium channels. Here, we have cloned and heterologous expressed the toxin PnTx4(5-5) in Escherichia coli. The recombinant toxin rPnTx4(5-5) was tested on the sodium channel NavBg from the cockroach Blatella germanica and on mammalian sodium channels Nav1.2-1.6, all expressed in Xenopus leavis oocytes. We showed that the toxin has different affinity and mode of action on insect and mammalian sodium channels. The most remarkable effect was on NavBg, where rPnTx4(5-5) strongly slowed down channel inactivation (EC50 = 212.5 nM), and at 1 μM caused an increase on current peak amplitude of 105.2 ± 3.1%. Interestingly, the toxin also inhibited sodium current on all the mammalian channels tested, with the higher current inhibition on Nav1.3 (38.43 ± 8.04%, IC50 = 1.5 μM). Analysis of activation curves on Nav1.3 and Nav1.5 showed that the toxin shifts channel activation to more depolarized potentials, which can explain the sodium current inhibition. Furthermore, the toxin also slightly slowed down sodium inactivation on Nav1.3 and Nav1.6 channels. As far as we know, this is the first araneomorph toxin described which can shift the sodium channel activation to more depolarized potentials and also slows down channel inactivation.

  4. Expression of sodium channel SNS/PN3 and ankyrin(G) mRNAs in the trigeminal ganglion after inferior alveolar nerve injury in the rat.

    PubMed

    Bongenhielm, U; Nosrat, C A; Nosrat, I; Eriksson, J; Fjell, J; Fried, K

    2000-08-01

    The inferior alveolar nerve is a sensory branch of the trigeminal nerve that is frequently damaged, and such nerve injuries can give rise to persistent paraesthesia and dysaesthesia. The mechanisms behind neuropathic pain following nerve injury is poorly understood. However, remodeling of voltage-gated sodium channels in the neuronal membrane has been proposed as one possible mechanism behind injury-induced ectopic hyperexcitability. The TTX-resistant sodium channel SNS/PN3 has been implicated in the development of neuropathic pain after spinal nerve injury. We here study the effect of chronic axotomy of the inferior alveolar nerve on the expression of SNS/PN3 mRNA in trigeminal sensory neurons. The organization of sodium channels in the neuronal membrane is maintained by binding to ankyrin, which help link the sodium channel to the membrane skeleton. Ankyrin(G), which colocalizes with sodium channels in the initial segments and nodes of Ranvier, and is necessary for normal neuronal sodium channel function, could be essential in the reorganization of the axonal membrane after nerve injury. For this reason, we here study the expression of ankyrin(G) in the trigeminal ganglion and the localization of ankyrin(G) protein in the inferior alveolar nerve after injury. We show that SNS/PN3 mRNA is down-regulated in small-sized trigeminal ganglion neurons following inferior alveolar nerve injury but that, in contrast to the persistent loss of SNS/PN3 mRNA seen in dorsal root ganglion neurons following sciatic nerve injury, the levels of SNS/PN3 mRNA appear to normalize within a few weeks. We further show that the expression of ankyrin(G) mRNA also is downregulated after nerve lesion and that these changes persist for at least 13 weeks. This decrease in the ankyrin(G) mRNA expression could play a role in the reorganization of sodium channels within the damaged nerve. The changes in the levels of SNS/PN3 mRNA in the trigeminal ganglion, which follow the time course for

  5. How soft is a single protein? The stress-strain curve of antibody pentamers with 5 pN and 50 pm resolutions

    NASA Astrophysics Data System (ADS)

    Perrino, Alma P.; Garcia, Ricardo

    2016-04-01

    Understanding the mechanical functionalities of complex biological systems requires the measurement of the mechanical compliance of their smallest components. Here, we develop a force microscopy method to quantify the softness of a single antibody pentamer by measuring the stress-strain curve with force and deformation resolutions, respectively, of 5 pN and 50 pm. The curve shows three distinctive regions. For ultrasmall compressive forces (5-75 pN), the protein's central region shows that the strain and stress are proportional (elastic regime). This region has an average Young's modulus of 2.5 MPa. For forces between 80 and 220 pN, the stress is roughly proportional to the strain with a Young's modulus of 9 MPa. Higher forces lead to irreversible deformations (plastic regime). Full elastic recovery could reach deformations amounting to 40% of the protein height. The existence of two different elastic regions is explained in terms of the structure of the antibody central region. The stress-strain curve explains the capability of the antibody to sustain multiple collisions without any loss of biological functionality.Understanding the mechanical functionalities of complex biological systems requires the measurement of the mechanical compliance of their smallest components. Here, we develop a force microscopy method to quantify the softness of a single antibody pentamer by measuring the stress-strain curve with force and deformation resolutions, respectively, of 5 pN and 50 pm. The curve shows three distinctive regions. For ultrasmall compressive forces (5-75 pN), the protein's central region shows that the strain and stress are proportional (elastic regime). This region has an average Young's modulus of 2.5 MPa. For forces between 80 and 220 pN, the stress is roughly proportional to the strain with a Young's modulus of 9 MPa. Higher forces lead to irreversible deformations (plastic regime). Full elastic recovery could reach deformations amounting to 40% of the

  6. Propagation of regional seismic phases (Lg and Sn) and Pn velocity structure along the Africa-Iberia plate boundary zone: tectonic implications

    NASA Astrophysics Data System (ADS)

    Calvert, Alexander; Sandvol, Eric; Seber, Dogan; Barazangi, Muawia; Vidal, Francisco; Alguacil, Gerardo; Jabour, Nacer

    2000-08-01

    We used over 1000 regional waveforms recorded by 60 seismic stations located in northwest Africa and Iberia to map the efficiency of Lg and Sn wave propagation beneath the Gulf of Cadiz, Alboran Sea and bounding Betic, Rif and Atlas mountain belts. Crustal attenuation is inferred from the tomographic inversion of Lg/Pg amplitude ratios. Upper mantle attenuation is inferred from maps of Sn propagation efficiency derived by inversion of well-defined qualitative efficiency assignments based on waveform characteristics. Regions of Lg attenuation correlate well with areas of thinned continental or oceanic crust, significant sedimentary basins, and lateral crustal variations. Comparison of the Sn efficiency results with velocities obtained from an anisotropic Pn traveltime inversion shows a fairly good correlation between regions of poor Sn efficiency and low Pn velocity. A low Pn velocity (7.6-7.8kms-1) and significant Sn attenuation in the uppermost mantle is imaged beneath the Betics in southern Spain, in sharp contrast to the relatively normal Pn velocity (8.0-8.1kms-1) and efficient Sn imaged beneath the Alboran Sea. Slow Pn velocity anomalies are also imaged beneath the Rif and Middle Atlas in Morocco. We do not identify any conclusive evidence of lithospheric-scale upper mantle attenuation beneath the Rif, although the crust in the Gibraltar region appears highly attenuating, making observations at stations in this region ambiguous. Paths crossing the Gulf of Cadiz, eastern Atlantic and the Moroccan and Iberian mesetas show very efficient Sn propagation and are imaged with high Pn velocities (8.1-8.2kms-1). The spatial distribution of attenuation and velocity anomalies lead us to conclude that some recovery of the mantle lid beneath the Alboran Sea must have occurred since the early Miocene episode of extension and volcanism. We interpret the low-velocity and attenuating regions beneath the Betics and possibly the Rif as indicating the presence of partial melt in

  7. Self-assembled molecular p/n junctions for applications in dye-sensitized solar energy conversion.

    PubMed

    Farnum, Byron H; Wee, Kyung-Ryang; Meyer, Thomas J

    2016-09-01

    The achievement of long-lived photoinduced redox separation lifetimes has long been a central goal of molecular-based solar energy conversion strategies. The longer the redox-separation lifetime, the more time available for useful work to be extracted from the absorbed photon energy. Here we describe a novel strategy for dye-sensitized solar energy applications in which redox-separated lifetimes on the order of milliseconds to seconds can be achieved based on a simple toolkit of molecular components. Specifically, molecular chromophores (C), electron acceptors (A) and electron donors (D) were self-assembled on the surfaces of mesoporous, transparent conducting indium tin oxide nanoparticle (nanoITO) electrodes to prepare both photoanode (nanoITO|-A-C-D) and photocathode (nanoITO|-D-C-A) assemblies. Nanosecond transient-absorption and steady-state photolysis measurements show that the electrodes function microscopically as molecular analogues of semiconductor p/n junctions. These results point to a new chemical strategy for dye-sensitized solar energy conversion based on molecular excited states and electron acceptors/donors on the surfaces of transparent conducting oxide nanoparticle electrodes.

  8. Determination of effective optical gap in dye/TiO{sub 2} systems inspired by p-n junctions

    SciTech Connect

    Hwang, Kyung-Jun; Jeong, Yonkil E-mail: widipark@gist.ac.kr; Park, Dong-Won E-mail: widipark@gist.ac.kr

    2015-04-06

    The effective optical gap and device current limits of dye-sensitized solar cells (DSCs) were investigated. Optical gap determination was based on an approach that assumes the presence of a nanoscale p-n junction in the DSCs between the bulk TiO{sub 2} semiconductor and the dye-cluster with quantum size effect. On the basis of this approach, the effective optical gap of the dye-absorber was extracted from a relation between external quantum efficiency and photon energy. The short-circuit current density of the fabricated DSCs showed a current loss in the range from 3.7 to 5.1 mA cm{sup −2} compared to the device current limit. This current loss can be mainly attributed to the light reflection of the window layer and the native charge-transfer loss by device imperfections, including subsidiary charge-transfer loss by a nanoscale Schottky junction between TiO{sub 2} and the electrolyte.

  9. In-Operando Spatial Imaging of Edge Termination Electric Fields in GaN Vertical p-n Junction Diodes

    DOE PAGES

    Leonard, Francois; Dickerson, J. R.; King, M. P.; ...

    2016-05-03

    Control of electric fields with edge terminations is critical to maximize the performance of high-power electronic devices. We proposed a variety of edge termination designs which makes the optimization of such designs challenging due to many parameters that impact their effectiveness. And while modeling has recently allowed new insight into the detailed workings of edge terminations, the experimental verification of the design effectiveness is usually done through indirect means, such as the impact on breakdown voltages. In this letter, we use scanning photocurrent microscopy to spatially map the electric fields in vertical GaN p-n junction diodes in operando. We alsomore » reveal the complex behavior of seemingly simple edge termination designs, and show how the device breakdown voltage correlates with the electric field behavior. Modeling suggests that an incomplete compensation of the p-type layer in the edge termination creates a bilayer structure that leads to these effects, with variations that significantly impact the breakdown voltage.« less

  10. First local seismic tomography for Red River shear zone, northern Vietnam: Stepwise inversion employing crustal P and Pn waves

    NASA Astrophysics Data System (ADS)

    Huang, Hsin-Hua; Xu, Zhen J.; Wu, Yih-Min; Song, Xiaodong; Huang, Bor-Shouh; Nguyen, Le Minh

    2013-01-01

    The 900-km-long Red River shear zone (RRSZ) lends a compelling support to the continental extrusion model for the tectonic evolution of southeastern Asia, but has been challenged by many of views, as some new records mainly from northern Vietnam, suspecting the dimensions of RRSZ neither in depth nor in displacement are as large as we expected before. However, compared to the northwestern half of the RRSZ in Yunnan province better studied by many fields, the southeastern half in northern Vietnam is relatively poorly constrained by seismic study, due to insufficient stations and data in the past. This study, using a newly deployed portable broadband seismic network, obtained the first local seismic tomography with a stepwise inversion using P and Pn phases. Surface geology, major structures, and rock properties are well correlated and identified in our model, suggesting the RRSZ is a lithospheric structure at least penetrating to the uppermost mantle with mantle thermal anomalies. In general, the crust of northern Vietnam appears to be weak and sits on a relatively hot uppermost mantle, showing a long and complex thermo tectonic history. A mid-lower crustal segmentation of RRSZ is also proposed to compromise the discrepancies recently observed between Yunnan province and northern Vietnam.

  11. Direct measurement of the position accuracy for low energy X-ray photons with a pnCCD

    NASA Astrophysics Data System (ADS)

    Ihle, S.; Holl, P.; Kalok, D.; Hartmann, R.; Ryll, H.; Steigenhöfer, D.; Strüder, L.

    2017-02-01

    We undertook a comparative study on optimizing the position accuracy of pnCCDs for single X-ray photon measurements. Various methods were analyzed by Monte Carlo simulations and related to experimental data obtained with a focused X-ray beam. Even with low energy photons of 1320 eV, a position accuracy much smaller than the actual pixel size of 48 μm × 48 μm can be achieved. This is possible since signal charges from a single photon interaction spread into more than one pixel, allowing a reconstruction of the original point of interaction. We found that a) making a decision on which pixels to use for the reconstruction and b) choosing a centroiding algorithm for carrying out the reconstruction were particularly crucial. For a) we introduce a new and superior method using a two step analysis with an adaptive pattern. It is compared to using a threshold or a fixed pattern. For b) we present a Center-of-Gravity method with a Gaussian correction taking into account the shape of the signal charge cloud. Both methods are also optimized for fast execution by implementing lookup tables rather than time consuming calculations. Our results show that with the appropriate analysis an uncertainty of the position measurement of better than 3.0 μm rms for 1320 eV photons is possible.

  12. Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2.

    PubMed

    Jariwala, Deep; Howell, Sarah L; Chen, Kan-Sheng; Kang, Junmo; Sangwan, Vinod K; Filippone, Stephen A; Turrisi, Riccardo; Marks, Tobin J; Lauhon, Lincoln J; Hersam, Mark C

    2016-01-13

    The recent emergence of a wide variety of two-dimensional (2D) materials has created new opportunities for device concepts and applications. In particular, the availability of semiconducting transition metal dichalcogenides, in addition to semimetallic graphene and insulating boron nitride, has enabled the fabrication of "all 2D" van der Waals heterostructure devices. Furthermore, the concept of van der Waals heterostructures has the potential to be significantly broadened beyond layered solids. For example, molecular and polymeric organic solids, whose surface atoms possess saturated bonds, are also known to interact via van der Waals forces and thus offer an alternative for scalable integration with 2D materials. Here, we demonstrate the integration of an organic small molecule p-type semiconductor, pentacene, with a 2D n-type semiconductor, MoS2. The resulting p-n heterojunction is gate-tunable and shows asymmetric control over the antiambipolar transfer characteristic. In addition, the pentacene/MoS2 heterojunction exhibits a photovoltaic effect attributable to type II band alignment, which suggests that MoS2 can function as an acceptor in hybrid solar cells.

  13. Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect.

    PubMed

    Wang, Zhaona; Yu, Ruomeng; Wen, Xiaonan; Liu, Ying; Pan, Caofeng; Wu, Wenzhuo; Wang, Zhong Lin

    2014-12-23

    Silicon-based p-n junction photodetectors (PDs) play an essential role in optoelectronic applications for photosensing due to their outstanding compatibility with well-developed integrated circuit technology. The piezo-phototronic effect, a three-way coupling effect among semiconductor properties, piezoelectric polarizations, and photon excitation, has been demonstrated as an effective approach to tune/modulate the generation, separation, and recombination of photogenerated electron-hole pairs during optoelectronic processes in piezoelectric-semiconductor materials. Here, we utilize the strain-induced piezo-polarization charges in a piezoelectric n-ZnO layer to modulate the optoelectronic process initiated in a p-Si layer and thus optimize the performances of p-Si/ZnO NWs hybridized photodetectors for visible sensing via tuning the transport property of charge carriers across the Si/ZnO heterojunction interface. The maximum photoresponsivity R of 7.1 A/W and fastest rising time of 101 ms were obtained from these PDs when applying an external compressive strain of -0.10‰ on the ZnO NWs, corresponding to relative enhancement of 177% in R and shortening to 87% in response time, respectively. These results indicate a promising method to enhance/optimize the performances of non-piezoelectric semiconductor material (e.g., Si) based optoelectronic devices by the piezo-phototronic effect.

  14. Developing Critical Loads of acidity for streams in the Great Smoky Mountains National Park, using PnET-BGC model

    NASA Astrophysics Data System (ADS)

    Fakhraei, H.

    2015-12-01

    Acid deposition has impaired acid-sensitive streams and reduced aquatic biotic integrity in Great Smoky Mountains National Park (GRSM) by decreasing pH and acid neutralizing capacity (ANC). Twelve streams in GRSM are listed by the state of Tennessee as impaired due to low stream pH (pH<6.0) under Section 303(d) of the Clean Water Act. A dynamic biogeochemical model, PnET-BGC, was used to evaluate past, current and potential future changes in soil and water chemistry of watersheds of GRSM in response to changes in acid deposition. Calibrating 30 stream-watersheds in GRSM (including 12 listed impaired streams) to the long-term stream chemistry observations, the model was parameterized for the Park. The calibrated model was used to evaluate the level of atmospheric deposition above which harmful effects occur, known as "critical loads", for individual study watersheds. Estimated critical loads and exceedances (levels of deposition above the critical load) of atmospheric sulfur and nitrogen deposition were depicted through geographic information system maps. Accuracy of model simulations in the presence of uncertainties in the estimated model parameters and inputs was assessed using three uncertainty and sensitivity techniques.

  15. Antibacterial activity of selected commercial products for mouth washing and disinfection, assessed in accordance with PN-EN 1040

    PubMed Central

    Tyski, Stefan; Bocian, Ewa; Mikucka, Agnieszka; Grzybowska, Wanda

    2013-01-01

    Background Currently, there is a wide range of products for mouth washing on the Polish market. They have different qualitative and quantitative compositions, and they differ particularly in the concentration of active substances. In antisepsis and disinfection, the significant reduction in number of cells of microorganisms in a particular environment is very crucial. The chemical agents should provide a significant decrease in number of microorganisms in a relatively short time. The purpose of this study was to examine the bactericidal activity of selected herbal products used for treatment of inflammation, and disinfection and washing of the mouth, having antibacterial activity as declared by the manufacturers. Material/Methods The study included 28 products for mouth washing and disinfection available in Poland. Bactericidal activity was studied using a quantitative suspension test according to the standard PN-EN 1040. Results Only 1 of 4 tested herbal products, registered as medicinal products, showed satisfactory antibacterial activity when they were used according to the manufacturer’s recommendations. A total of 13 preparations (48%) complied with the standard requirements against all tested strains. Up to 19% of products showed no bactericidal activity against bacterial strains, and up to 33% were only effective against certain microorganisms. Conclusions The informational literature accompanying most antiseptics should be corrected by the manufacturers, providing information about antimicrobial activity consistent with the requirements of applicable standards. The information on the packaging or in the leaflets for antiseptic products should be corrected by the manufacturers to include accurate information on antimicrobial activity. PMID:23764523

  16. The MPI/AIT X-ray Imager (MAXI): High speed pn-CCD's for x-ray detection

    SciTech Connect

    Strueder, L.; Braeuninger, H.; Meier, M.; Predehl, P.; Reppin, C.; Sterzik, M.; Truemper, J. . Inst. fuer Astrophysik); Cattaneo, P.; Hauff, D.; Lutz, G.; Schuster, K.F.; Schwarz, A. . Werner-Heisenberg-Inst. fuer Physik); Kenziorra, E.; Staubert, A. (Tuebingen

    1989-06-01

    MAXI (MPI/AIT X-RAY Imager) is part of a proposal submitted to the European Space Agency (ESA) as focal plane instrumentation of the X-ray Multi Mission (XMM). Within a collaboration of 13 European institutes we have proposed a fully depleted (sensitive) pn CCD of 280 {mu}m thickness with a homogeneous sensitive area of 36 cm{sup 2} and a pixel size of 150 {times} 150 {mu}m{sup 2} which is well matched with the telescope's angular resolution of 30 arcsec, translating to a position resolution of approximately 1 mm in the focal plane. The X-ray sensitivity is higher than 90% from 250 eV up to 10 keV, the readout time in the full frame mode of the complete focal plane will be 2 ms with a readout noise of better than 5 e{sup {minus}} (rms). Prototypes of all individual components of the camera system have been fabricated and tested. The camera concept will be presented. The measured transfer properties of the CCD and the on-chip electronics will be treated. Taking into account the coupling of the on-chip amplifier to the following front-end electronics the expected performance will be derived.

  17. Structural, electrical, and optical characterization of coalescent p-n GaN nanowires grown by molecular beam epitaxy

    SciTech Connect

    Kolkovsky, Vl.; Zytkiewicz, Z. R.; Sobanska, M.; Klosek, K.; Korona, K. P.

    2015-12-14

    The electrical, structural, and optical properties of coalescent p-n GaN nanowires (NWs) grown by molecular beam epitaxy on Si (111) substrate are investigated. From photoluminescence measurements the full width at half maximum of bound exciton peaks AX and DA is found as 1.3 and 1.2 meV, respectively. These values are lower than those reported previously in the literature. The current-voltage characteristics show the rectification ratio of about 10{sup 2} and the leakage current of about 10{sup −4} A/cm{sup 2} at room temperature. We demonstrate that the thermionic mechanism is not dominant in these samples and spatial inhomogeneties and tunneling processes through a ∼2 nm thick SiN{sub x} layer between GaN and Si could be responsible for deviation from the ideal diode behavior. The free carrier concentration in GaN NWs determined by capacitance-voltage measurements is about 4 × 10{sup 15 }cm{sup −3}. Two deep levels (H190 and E250) are found in the structures. We attribute H190 to an extended defect located at the interface between the substrate and the SiN{sub x} interlayer or near the sidewalls at the bottom of the NWs, whereas E250 is tentatively assigned to a gallium-vacancy- or nitrogen interstitials-related defect.

  18. Structural, electrical, and optical characterization of coalescent p-n GaN nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kolkovsky, Vl.; Zytkiewicz, Z. R.; Korona, K. P.; Sobanska, M.; Klosek, K.

    2015-12-01

    The electrical, structural, and optical properties of coalescent p-n GaN nanowires (NWs) grown by molecular beam epitaxy on Si (111) substrate are investigated. From photoluminescence measurements the full width at half maximum of bound exciton peaks AX and DA is found as 1.3 and 1.2 meV, respectively. These values are lower than those reported previously in the literature. The current-voltage characteristics show the rectification ratio of about 102 and the leakage current of about 10-4 A/cm2 at room temperature. We demonstrate that the thermionic mechanism is not dominant in these samples and spatial inhomogeneties and tunneling processes through a ˜2 nm thick SiNx layer between GaN and Si could be responsible for deviation from the ideal diode behavior. The free carrier concentration in GaN NWs determined by capacitance-voltage measurements is about 4 × 1015 cm-3. Two deep levels (H190 and E250) are found in the structures. We attribute H190 to an extended defect located at the interface between the substrate and the SiNx interlayer or near the sidewalls at the bottom of the NWs, whereas E250 is tentatively assigned to a gallium-vacancy- or nitrogen interstitials-related defect.

  19. Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer

    PubMed Central

    Yu, Yang; Fong, Patrick W. K.; Wang, Shifeng; Surya, Charles

    2016-01-01

    High quality wafer-scale free-standing WS2 grown by van der Waals rheotaxy (vdWR) using Ni as a texture promoting layer is reported. The microstructure of vdWR grown WS2 was significantly modified from mixture of crystallites with their c-axes both parallel to (type I) and perpendicular to (type II) the substrate to large type II crystallites. Wafer-scale transfer of vdWR grown WS2 onto different substrates by an etching-free technique was demonstrated for the first time that utilized the hydrophobic property of WS2 and hydrophilic property of sapphire. Our results show that vdWR is a reliable technique to obtain type-II textured crystallites in WS2, which is the key factor for the wafer-scale etching-free transfer. The transferred films were found to be free of observable wrinkles, cracks, or polymer residues. High quality p-n junctions fabricated by room-temperature transfer of the p-type WS2 onto an n-type GaN was demonstrated with a small leakage current density of 29.6 μA/cm2 at −1 V which shows superior performances compared to the directly grown WS2/GaN heterojunctions. PMID:27897210

  20. Combined experimental-theoretical characterization of the hydrido-cobaloxime [HCo(dmgH)2(PnBu3)].

    PubMed

    Bhattacharjee, Anirban; Chavarot-Kerlidou, Murielle; Andreiadis, Eugen S; Fontecave, Marc; Field, Martin J; Artero, Vincent

    2012-07-02

    A combined theoretical and experimental approach has been employed to characterize the hydrido-cobaloxime [HCo(dmgH)(2)(PnBu(3))] compound. This complex was originally investigated by Schrauzer et al. [Schrauzer et al., J. Am. Chem. Soc. 1971, 93,1505] and has since been referred to as a key, stable analogue of the hydride intermediate involved in hydrogen evolution catalyzed by cobaloxime compounds [Artero, V. et al. Angew. Chem., Int. Ed. 2011, 50, 7238-7266]. We employed quantum chemical calculations, using density functional theory and correlated RI-SCS-MP2 methods, to characterize the structural and electronic properties of the compound and observed important differences between the calculated (1)H NMR spectrum and that reported in the original study by Schrauzer and Holland. To calibrate the theoretical model, the stable hydrido tetraamine cobalt(III) complex [HCo(tmen)(2)(OH(2))](2+) (tmen = 2,3-dimethyl-butane-2,3-diamine) [Rahman, A. F. M. M. et al. Chem. Commun. 2003, 2748-2749] was subjected to a similar analysis, and, in this case, the calculated results agreed well with those obtained experimentally. As a follow-up to the computational work, the title hydrido-cobaloxime compound was synthesized and recharacterized experimentally, together with the Co(I) derivative, giving results that were in agreement with the theoretical predictions.

  1. p-n junction improvements of Cu2ZnSnS4/CdS monograin layer solar cells

    NASA Astrophysics Data System (ADS)

    Kauk-Kuusik, M.; Timmo, K.; Danilson, M.; Altosaar, M.; Grossberg, M.; Ernits, K.

    2015-12-01

    In this work we studied the influence of oxidative etching of CZTS monograin surface to the performance of CZTS monograin layer solar cells. The chemistry of CZTS monograin powder surfaces submitted to bromine in methanol and KCN aqueous solutions was investigated by X-ray photoelectron spectroscopy. After bromine etching, elemental sulfur, Sn-O and/or Sn-Br species are formed on the CZTS crystal surface. Sulfur is completely removed by subsequent KCN etching, but oxides and bromides remained on the surface until CdS deposition. These species dissolve in alkaline solution and influence properties of CdS. The conversion efficiency of solar cells improved after the chemical etching prior to CdS deposition and the effect can be attributed to the change of the absorber material crystals surface composition and properties suitable for the effective p-n junction formation. The best CZTS monograin layer solar cell showed conversation efficiency of 7.04% (active area 9.38%).

  2. Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

    NASA Astrophysics Data System (ADS)

    Wu, Haiyan; Ma, Ziguang; Jiang, Yang; Wang, Lu; Yang, Haojun; Li, Yangfeng; Zuo, Peng; Jia, Haiqiang; Wang, Wenxin; Zhou, Junming; Liu, Wuming; Chen, Hong

    2016-11-01

    A new mechanism of light-to-electricity conversion that uses InGaN/GaN QWs with a p-n junction is reported. According to the well established light-to-electricity conversion theory, quantum wells (QWs) cannot be used in solar cells and photodetectors because the photogenerated carriers in QWs usually relax to ground energy levels, owing to quantum confinement, and cannot form a photocurrent. We observe directly that more than 95% of the photoexcited carriers escape from InGaN/GaN QWs to generate a photocurrent, indicating that the thermionic emission and tunneling processes proposed previously cannot explain carriers escaping from QWs. We show that photoexcited carriers can escape directly from the QWs when the device is under working conditions. Our finding challenges the current theory and demonstrates a new prospect for developing highly efficient solar cells and photodetectors. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340) and the Innovative Clean-energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

  3. Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer

    NASA Astrophysics Data System (ADS)

    Yu, Yang; Fong, Patrick W. K.; Wang, Shifeng; Surya, Charles

    2016-11-01

    High quality wafer-scale free-standing WS2 grown by van der Waals rheotaxy (vdWR) using Ni as a texture promoting layer is reported. The microstructure of vdWR grown WS2 was significantly modified from mixture of crystallites with their c-axes both parallel to (type I) and perpendicular to (type II) the substrate to large type II crystallites. Wafer-scale transfer of vdWR grown WS2 onto different substrates by an etching-free technique was demonstrated for the first time that utilized the hydrophobic property of WS2 and hydrophilic property of sapphire. Our results show that vdWR is a reliable technique to obtain type-II textured crystallites in WS2, which is the key factor for the wafer-scale etching-free transfer. The transferred films were found to be free of observable wrinkles, cracks, or polymer residues. High quality p-n junctions fabricated by room-temperature transfer of the p-type WS2 onto an n-type GaN was demonstrated with a small leakage current density of 29.6 μA/cm2 at ‑1 V which shows superior performances compared to the directly grown WS2/GaN heterojunctions.

  4. Effect of disorder on longitudinal resistance of a graphene p-n junction in the quantum Hall regime

    NASA Astrophysics Data System (ADS)

    Chen, Jiang-Chai; Yeung, T. C. Au; Sun, Qing-Feng

    2010-06-01

    The longitudinal resistances of a six-terminal graphene p-n junction under a perpendicular magnetic field are investigated. Because of the chirality of the Hall edge states, the longitudinal resistances on top and bottom edges of the graphene ribbon are not equal. In the presence of suitable disorder, the top-edge and bottom-edge resistances well show the plateau structures in the both unipolar and bipolar regimes, and the plateau values are determined by the Landau filling factors only. These plateau structures are in excellent agreement with the recent experiment. For the unipolar junction, the resistance plateaus emerge in the absence of impurity and they are destroyed by strong disorder. But for the bipolar junction, the resistances are very large without the plateau structures in the clean junction. The disorder can strongly reduce the resistances and leads the formation of the resistance plateaus due to the mixture of the Hall edge states in virtue of the disorder. In addition, the size effect of the junction on the resistances is studied and some extra resistance plateaus are found in the long graphene junction case. This is explained by the fact that only part of the edge states participate in the full mixing.

  5. Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots

    NASA Astrophysics Data System (ADS)

    Sato, Shin-ichiro; Schmieder, Kenneth J.; Hubbard, Seth M.; Forbes, David V.; Warner, Jeffrey H.; Ohshima, Takeshi; Walters, Robert J.

    2016-05-01

    In order to expand the technology of III-V semiconductor devices with quantum structures to both terrestrial and space use, radiation induced defects as well as native defects generated in the quantum structures should be clarified. Electrically active defects in GaAs p+n diodes with embedded ten layers of InAs quantum dots (QDs) are investigated using Deep Level Transient Fourier Spectroscopy. Both majority carrier (electron) and minority carrier (hole) traps are characterized. In the devices of this study, GaP layers are embedded in between the QD layers to offset the compressive stress introduced during growth of InAs QDs. Devices are irradiated with high energy protons for three different fluences at room temperature in order to characterize radiation induced defects. Seven majority electron traps and one minority hole trap are found after proton irradiation. It is shown that four electron traps induced by proton irradiation increase in proportion to the fluence, whereas the EL2 trap, which appears before irradiation, is not affected by irradiation. These defects correspond to electron traps previously identified in GaAs. In addition, a 0.53 eV electron trap and a 0.14 eV hole trap are found in the QD layers before proton irradiation. It is shown that these native traps are also unaffected by irradiation. The nature of the 0.14 eV hole trap is thought to be Ga-vacancies in the GaP strain balancing layers.

  6. VizieR Online Data Catalog: Water maser emission toward post-AGB and PN (Gomez+, 2015)

    NASA Astrophysics Data System (ADS)

    Gomez, J. F.; Rizzo, J. R.; Suarez, O.; Palau, A.; Miranda, L. F.; Guerrero, M. A.; Ramos-Larios, G.; Torrelles, J. M.

    2015-09-01

    The observed sources are listed in Table 1. They comprise most of the sources in Ramos-Larios et al. (2009A&A...501.1207R). They are post-AGB stars and PN candidates with the IRAS color criteria of Suarez et al. (2006A&A...458..173S) and with signs of strong optical obscuration. We have also included some optically visible post-AGB stars from Suarez et al. (2006A&A...458..173S) that were not included in our previous water maser observations of Suarez et al. (2007A&A...467.1085S, 2009A&A...505..217S) or for which those observations had poor sensitivity. We observed the 616-523 transition of H2O (rest frequency = 22235.08MHz) using three different telescopes: the DSS-63 antenna (70m diameter) at the Madrid Deep Space Communications Complex (MDSCC) near Robledo de Chavela (Spain), the 64m antenna at the Parkes Observatory of the Australia Telescope National Facility (ATNF), and the 100m Robert C. Byrd Green Bank Telescope (GBT) of the National Radio Astronomy Observatory. The observed positions, rms noise per spectral channel, and observing dates are listed in Table 1. (3 data files).

  7. Electrolytic phototransistor based on graphene-MoS2 van der Waals p-n heterojunction with tunable photoresponse

    NASA Astrophysics Data System (ADS)

    Henck, Hugo; Pierucci, Debora; Chaste, Julien; Naylor, Carl H.; Avila, Jose; Balan, Adrian; Silly, Mathieu G.; Asensio, Maria C.; Sirotti, Fausto; Johnson, A. T. Charlie; Lhuillier, Emmanuel; Ouerghi, Abdelkarim

    2016-09-01

    Van der Waals (vdW) heterostructures obtained by stacking 2D materials offer a promising route for next generation devices by combining different unique properties in completely new artificial materials. In particular, the vdW heterostructures combine high mobility and optical properties that can be exploited for optoelectronic devices. Since the p-n junction is one of the most fundamental units of optoelectronics, we propose an approach for its fabrication based on the intrinsic n doped MoS2 and the p doped bilayer graphene hybrid interfaces. We demonstrate the control of the photoconduction properties using electrolytic gating which ensures a low bias operation. We show that by finely choosing the doping value of each layer, the photoconductive properties of the hybrid system can be engineered to achieve magnitude and sign control of the photocurrent. Finally, we provide a simple phase diagram relating the photoconductive behavior with the chosen doping, which we believe can be very useful for the future design of the van der Waals based photodetectors.

  8. VizieR Online Data Catalog: ExoMol line list for phosphorus nitride (PN) (Yorke+, 2014)

    NASA Astrophysics Data System (ADS)

    Yorke, L.; Yurchenko, S. N.; Lodi, L.; Tennyson, J.

    2014-09-01

    The data are in two parts: .states contain lists of rovibrational states of PN. Each state is labelled with the total angular momentum J and the vibrational quantum number v and represented by a unique number, which is the number of the row in which it appears in the .states file. This number is the means by which the state is related to the second part of the data system, the transitions files. The total degeneracy is also given to facilitate the intensity calculations. The transition files .trans contain transitions given by three columns: the reference number in the energy file of the upper state for the isotopologue in question; that of the lower state; and the Einstein A coefficient of the transition. The transitions ordered by increasing frequency. There is a Fortran 90 programme, spectrum_exomol.f90 which may be used to generate synthetic spectra (see spectrum_exomol.txt for details). Using this, it is possible to generate absorption or emission spectra in either 'stick' form or else cross-sections convoluted with a gaussian with the half-width at half maximum being specified by the user, or with a the temperature-dependent doppler half-width. Sample input files with spectrum_exomol.f90 are supplied. (11 data files).

  9. Self-assembled molecular p/n junctions for applications in dye-sensitized solar energy conversion

    NASA Astrophysics Data System (ADS)

    Farnum, Byron H.; Wee, Kyung-Ryang; Meyer, Thomas J.

    2016-09-01

    The achievement of long-lived photoinduced redox separation lifetimes has long been a central goal of molecular-based solar energy conversion strategies. The longer the redox-separation lifetime, the more time available for useful work to be extracted from the absorbed photon energy. Here we describe a novel strategy for dye-sensitized solar energy applications in which redox-separated lifetimes on the order of milliseconds to seconds can be achieved based on a simple toolkit of molecular components. Specifically, molecular chromophores (C), electron acceptors (A) and electron donors (D) were self-assembled on the surfaces of mesoporous, transparent conducting indium tin oxide nanoparticle (nanoITO) electrodes to prepare both photoanode (nanoITO|-A-C-D) and photocathode (nanoITO|-D-C-A) assemblies. Nanosecond transient-absorption and steady-state photolysis measurements show that the electrodes function microscopically as molecular analogues of semiconductor p/n junctions. These results point to a new chemical strategy for dye-sensitized solar energy conversion based on molecular excited states and electron acceptors/donors on the surfaces of transparent conducting oxide nanoparticle electrodes.

  10. Binding of (/sup 3/H)isradipine (PN 200-110) on smooth muscle cell membranes from different bovine arteries

    SciTech Connect

    Pinquier, J.L.; Urien, S.; Chaumet-Riffaud, P.; Comte, A.; Tillement, J.P.

    1988-04-01

    The binding of (/sup 3/H)isradipine ((/sup 3/H)PN 200-110), a new dihydropyridine (DHP) calcium blocker on smooth muscle cell (SMC) membranes from different bovine arteries was saturable with comparable high affinities but different binding site densities (Bmax). The data were fitted to a model that provided a common estimation for the dissociation constant (Kd = 0.46 nM, SD = 0.03) but different Bmax values. Two groups of arteries could be distinguished, large-sized with high Bmax (aorta, 149 fmol/mg, SD = 4; intrapulmonary, 134 fmol/mg, SD = 4) and medium-sized with lower Bmax (mesenteric, 67 fmol/mg, SD = 2; internal carotid, 50 fmol/mg, SD = 2; renal artery, 29 fmol/mg, SD = 2). The Kd values were similar to those previously reported, but the Bmax value on aorta SMC was higher than usually reported with other DHPs, showing that isradipine was a high full antagonist of calcium channel. Our results also suggest that the increase in arterial compliance induced by DHPs will probably be more important on large-sized arteries than on medium-sized arteries because of higher DHP binding.

  11. PnLRR-RLK27, a novel leucine-rich repeats receptor-like protein kinase from the Antarctic moss Pohlia nutans, positively regulates salinity and oxidation-stress tolerance.

    PubMed

    Wang, Jing; Liu, Shenghao; Li, Chengcheng; Wang, Tailin; Zhang, Pengying; Chen, Kaoshan

    2017-01-01

    Leucine-rich repeats receptor-like kinases (LRR-RLKs) play important roles in plant growth and development as well as stress responses. Here, 56 LRR-RLK genes were identified in the Antarctic moss Pohlia nutans transcriptome, which were further classified into 11 subgroups based on their extracellular domain. Of them, PnLRR-RLK27 belongs to the LRR II subgroup and its expression was significantly induced by abiotic stresses. Subcellular localization analysis showed that PnLRR-RLK27 was a plasma membrane protein. The overexpression of PnLRR-RLK27 in Physcomitrella significantly enhanced the salinity and ABA tolerance in their gametophyte growth. Similarly, PnLRR-RLK27 heterologous expression in Arabidopsis increased the salinity and ABA tolerance in their seed germination and early root growth as well as the tolerance to oxidative stress. PnLRR-RLK27 overproduction in these transgenic plants increased the expression of salt stress/ABA-related genes. Furthermore, PnLRR-RLK27 increased the activities of reactive oxygen species (ROS) scavengers and reduced the levels of malondialdehyde (MDA) and ROS. Taken together, these results suggested that PnLRR-RLK27 as a signaling regulator confer abiotic stress response associated with the regulation of the stress- and ABA-mediated signaling network.

  12. PnLRR-RLK27, a novel leucine-rich repeats receptor-like protein kinase from the Antarctic moss Pohlia nutans, positively regulates salinity and oxidation-stress tolerance

    PubMed Central

    Wang, Jing; Liu, Shenghao; Li, Chengcheng; Wang, Tailin; Chen, Kaoshan

    2017-01-01

    Leucine-rich repeats receptor-like kinases (LRR-RLKs) play important roles in plant growth and development as well as stress responses. Here, 56 LRR-RLK genes were identified in the Antarctic moss Pohlia nutans transcriptome, which were further classified into 11 subgroups based on their extracellular domain. Of them, PnLRR-RLK27 belongs to the LRR II subgroup and its expression was significantly induced by abiotic stresses. Subcellular localization analysis showed that PnLRR-RLK27 was a plasma membrane protein. The overexpression of PnLRR-RLK27 in Physcomitrella significantly enhanced the salinity and ABA tolerance in their gametophyte growth. Similarly, PnLRR-RLK27 heterologous expression in Arabidopsis increased the salinity and ABA tolerance in their seed germination and early root growth as well as the tolerance to oxidative stress. PnLRR-RLK27 overproduction in these transgenic plants increased the expression of salt stress/ABA-related genes. Furthermore, PnLRR-RLK27 increased the activities of reactive oxygen species (ROS) scavengers and reduced the levels of malondialdehyde (MDA) and ROS. Taken together, these results suggested that PnLRR-RLK27 as a signaling regulator confer abiotic stress response associated with the regulation of the stress- and ABA-mediated signaling network. PMID:28241081

  13. High Yielding Microbubble Production Method

    PubMed Central

    Fiabane, Joe; Prentice, Paul; Pancholi, Ketan

    2016-01-01

    Microfluidic approaches to microbubble production are generally disadvantaged by low yield and high susceptibility to (micro)channel blockages. This paper presents an alternative method of producing microbubbles of 2.6 μm mean diameter at concentrations in excess of 30 × 106 mL−1. In this method, the nitrogen gas flowing inside the liquid jet is disintegrated into spray of microbubble when air surrounding this coflowing nitrogen gas-liquid jet passes through a 100 μm orifice at high velocity. Resulting microbubble foam has the polydispersity index of 16%. Moreover, a ratio of mean microbubble diameter to channel width ratio was found to be less than 0.025, which substantially alleviates the occurrence of blockages during production. PMID:27034935

  14. [Effects of long-term mixed application of organic and inorganic fertilizers on canopy apparent photosynthesis and yield of winter wheat].

    PubMed

    Zhao, Jun; Dong, Shu-ting; Liu, Peng; Zhang, Ji-wang; Zhao, Bin

    2015-08-01

    A field experiment was conducted using the winter wheat (Triticum aestivum) variety Shimai 15. The source of organic nitrogen was cow manure, and four fertilization treatments were included, i.e., no N fertilizer application, single application of urea, single application of cow manure, and mixed application of urea and cow manure. The effects of different applications of inorganic and organic nitrogen on canopy apparent photosynthesis (CAP), photosynthetic rate of flag leaves (Pn), leaf area index (LAI), florescence parameters and grain yield of winter wheat were determined. The results showed that urea had the largest effect on the early growth period, as at this stage the CAP, Pn and LAI of the single application of urea were the highest, which was followed by the mixed application and the single application of cow manure. However, 10 days after anthesis, the single application of cow manure and the mixed application delayed the leaf senescence process when compared with the single application of urea. This could be due to the two treatments having higher anti-oxidant enzyme activity and promoting a longer green leaf duration, which could maintain a higher photosynthetic capability. What' s more, the mixed application had a better performance and got the highest grain yield. Consequently, the mixed application of organic and inorganic fertilizers could delay leaf senescence and maintain a better canopy structure and higher photosynthesis capability at the late grain filling stage, which resulted in a higher grain yield.

  15. Recent Results from Lohengrin on Fission Yields and Related Decay Properties

    NASA Astrophysics Data System (ADS)

    Serot, O.; Amouroux, C.; Bidaud, A.; Capellan, N.; Chabod, S.; Ebran, A.; Faust, H.; Kessedjian, G.; Köester, U.; Letourneau, A.; Litaize, O.; Martin, F.; Materna, T.; Mathieu, L.; Panebianco, S.; Regis, J.-M.; Rudigier, M.; Sage, C.; Urban, W.

    2014-05-01

    The Lohengrin mass spectrometer is one of the 40 instruments built around the reactor of the Institute Laue-Langevin (France) which delivers a very intense thermal neutron flux. Usually, Lohengrin was combined with a high-resolution ionization chamber in order to obtain good nuclear charge discrimination within a mass line, yielding an accurate isotopic yield determination. Unfortunately, this experimental procedure can only be applied for fission products with a nuclear charge less than about 42, i.e. in the light fission fragment region. Since 2008, a large collaboration has started with the aim of studying various fission aspects, mainly in the heavy fragment region. For that, a new experimental setup which allows isotopic identification by γ-ray spectrometry has been developed and validated. This technique was applied on the 239Pu(nth,f) reaction where about 65 fission product yields were measured with an uncertainty that has been reduced on average by a factor of 2 compared with what was that previously available in nuclear data libraries. The same γ-ray spectrometric technique is currently being applied to the study of the 233U(nth,f) reaction. Our aim is to deduce charge and mass distributions of the fission products and to complete the experimental data that exist mainly for light fission fragments. The measurement of 41 mass yields from the 241Am(2nth,f) reaction has been also performed. In addition to these activities on fission yield measurements, various new nanosecond isomers were discovered. Their presence can be revealed from a strong deformed ionic charge distribution compared to a 'normal' Gaussian shape. Finally, a new neutron long-counter detector designed to have a detection efficiency independent of the detected neutron energy has been built. Combining this neutron device with a Germanium detector and a beta-ray detector array allowed us to measure the beta-delayed neutron emission probability Pn of some important fission products for reactor

  16. INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Relationship between the p-n junction position and the threshold current of stripe lasers emitting in the 1.3-μm range

    NASA Astrophysics Data System (ADS)

    Walachová, J.; Zelinka, J.

    1988-11-01

    The method of profiling with a probe was used to determine the p-n junction position in the active layer InP/GaInAsP double heterostructure lasers designed for operation in the region of 1.3 μm. Double heterostructures with different Zn concentrations in the upper GaInAsP layer were investigated. An explanation was provided of the shift or lack of shift of the p-n junction in different heterostructure lasers. The average threshold current was correlated with the p-n junction position.

  17. Fabrication of self-aligned graded junction termination extensions with applications to 4H-SiC P-N diodes

    NASA Astrophysics Data System (ADS)

    Merrett, J. N.; Isaacs-Smith, T.; Sheridan, D. C.; Williams, J. R.

    2002-06-01

    The properties of SiC make this wide band-gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices, such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc., all of which require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power-handling capabilities. In this paper, we describe a technique for fabricating a graded junction termination extension (GJTE) that is effective and self-aligned, a feature that simplifies the implantation process during fabrication and, therefore, has the potential to reduce production costs. Implanted anode p-n diodes fabricated using this technique on 10-µm thick n- epitaxial layer had a maximum breakdown voltage of 1830 V. This was comparable to the ideal parallel-plane breakdown of 1900 V predicted by numerical simulation.

  18. Summary of theoretical and experimental investigation of grating type, silicon photovoltaic cells. [using p-n junctions on light receiving surface of base crystal

    NASA Technical Reports Server (NTRS)

    Chen, L. Y.; Loferski, J. J.

    1975-01-01

    Theoretical and experimental aspects are summarized for single crystal, silicon photovoltaic devices made by forming a grating pattern of p/n junctions on the light receiving surface of the base crystal. Based on the general semiconductor equations, a mathematical description is presented for the photovoltaic properties of such grating-like structures in a two dimensional form. The resulting second order elliptical equation is solved by computer modeling to give solutions for various, reasonable, initial values of bulk resistivity, excess carrier concentration, and surface recombination velocity. The validity of the computer model is established by comparison with p/n devices produced by alloying an aluminum grating pattern into the surface of n-type silicon wafers. Current voltage characteristics and spectral response curves are presented for cells of this type constructed on wafers of different resistivities and orientations.

  19. Highly Efficient Sky-Blue Fluorescent Organic Light Emitting Diode Based on Mixed Cohost System for Thermally Activated Delayed Fluorescence Emitter (2CzPN).

    PubMed

    Sun, Jin Won; Kim, Kwon-Hyeon; Moon, Chang-Ki; Lee, Jeong-Hwan; Kim, Jang-Joo

    2016-04-20

    The mixed cohosts of 1,3-bis(N-carbazolyl)benzene and 2,8-bis(diphenylphosphoryl)dibenzothiophene have been developed for a highly efficient blue fluorescent oragnic light emitting diode (OLED) doped with a thermally activated delayed fluorescence (TADF) emitter [4,5-di (9H-carbazol-9-yl) phthalonitrile (2CzPN)]. We have demonstrated one of the highest external quantum efficiency of 21.8% in blue fluorescent OLEDs, which is identical to the theoretically achievable maximum electroluminescence efficiency using the emitter. Interestingly, the efficiency roll-off is large even under the excellent charge balance in the device and almost the same as the single host based devices, indicating that the efficiency roll-off in 2CzPN based TADF host is related to the material characteristics, such as low reverse intesystem crossing rate rather than charge imbalance.

  20. Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p-n homojunctions by electrospinning.

    PubMed

    Zhang, H D; Yu, M; Zhang, J C; Sheng, C H; Yan, X; Han, W P; Liu, Y C; Chen, S; Shen, G Z; Long, Y Z

    2015-06-21

    La-doped p-type ZnO nanofibers were successfully synthesized by electrospinning, followed by calcination. The microstructure and morphology of the La-doped ZnO nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The field effect curve of individual nanofibers confirms that the resulting La-doped ZnO fibers are p-type semiconductors. The doping mechanism is discussed. Furthermore, crossed p-n homojunction nanofibers were also prepared based on electrospun La-doped p-type ZnO and n-type pure ZnO fibers. The current-voltage curve shows the typical rectifying characteristic of a p-n homojunction device. The turn-on voltage appears at about 2.5 V under the forward bias and the reverse current is impassable.

  1. Study of Gamow-Teller transitions from 132Sn via the (p,n) reaction at 220 MeV/u in inverse kinematics

    NASA Astrophysics Data System (ADS)

    Sasano, M.; Yasuda, J.; Zegers, R. G. T.; Baba, H.; Chao, W.; Dozono, M.; Fukuda, N.; Inabe, N.; Isobe, T.; Jhang, G.; Kamaeda, D.; Kubo, T.; Kurata-Nishimura, M.; Milman, E.; Motobayashi, T.; Otsu, H.; Panin, V.; Powell, W.; Sakai, H.; Sako, M.; Sato, H.; Shimizu, Y.; Stuhl, L.; Suzuki, H.; Tangwancharoen, S.; Takeda, H.; Uesaka, T.; Yoneda, K.; Zenihiro, J.; Kobayashi, T.; Sumikama, T.; Tako, T.; Nakamura, T.; Kondo, Y.; Togano, Y.; Shikata, M.; Tsubota, J.; Yako, K.; Shimoura, K.; Ota, S.; Kawase, S.; Kubota, Y.; Takaki, M.; Michimasa, S.; Kisamori, K.; Lee, C. S.; Tokieda, H.; Kobayashi, M.; Koyama, S.; Kobayashi, N.; Wakasa, T.; Sakaguchi, S.; Krasznahorkay, A.; Murakami, T.; Nakatsuka, N.; Kaneko, M.; Matsuda, Y.; Mucher, D.; Reichert, S.; Bazin, D.; Lee, J. W.

    2016-01-01

    The charge-exchange (p,n) reaction at 220 MeV has been measured to extract the strength distribution of Gamow-Teller transitions from the doubly magic unstable nucleus 132Sn. A recently developed experimental technique of measuring the (p,n) reaction in inverse kinematics has been applied to the study of unstable nuclei in the mass region around A˜100 for the first time. We have combined the low-energy neutron detector WINDS and the SAMURAI spectrometer at the RIKEN radioactive isotope beam factory (RIBF). The particle identification plot for the reaction residues obtained by the spectrometer provides the clear separation of the CE reaction channel from other background events, enabling us to identify kinematic curves corresponding the (p, n) reaction. Further analysis to reconstruct the excitation energy spectrum is ongoing.

  2. Increased efficiency in pn-junction PbS QD solar cells via NaHS treatment of the p-type layer

    NASA Astrophysics Data System (ADS)

    Speirs, Mark J.; Balazs, Daniel M.; Dirin, Dmitry N.; Kovalenko, Maksym V.; Loi, Maria Antonietta

    2017-03-01

    Lead sulfide quantum dot (PbS QD) solar cell efficiencies have improved rapidly over the past years due in large part to intelligent band alignment considerations. A pn-junction can be formed by connecting PbS layers with contrasting ligands. However, the resulting doping concentrations are typically low and cannot be effectively controlled. Here, we present a method of chemically p-doping films of thiol capped PbS QDs. P-n junction solar cells with increased doping in the p-type layer show improved short circuit current and fill factor, leading to an improvement in the power conversion efficiency from 7.1% to 7.6%. By examining Schottky diodes, field effect transistors, and the absorption spectra of treated and untreated PbS QDs, we show that the improved efficiency is due to the increased doping concentration in the thiol capped QD layer and to denser packing of the PbS QD film.

  3. Impact of dislocation densities on n+/p and p+/n junction GaAs diodes and solar cells on SiGe virtual substrates

    NASA Astrophysics Data System (ADS)

    Andre, C. L.; Wilt, D. M.; Pitera, A. J.; Lee, M. L.; Fitzgerald, E. A.; Ringel, S. A.

    2005-07-01

    Recent experimental measurements have shown that in GaAs with elevated threading dislocation densities (TDDs) the electron lifetime is much lower than the hole lifetime [C. L. Andre, J. J. Boeckl, D. M. Wilt, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, B. M. Keyes, and S. A. Ringel, Appl. Phys. Lett. 84, 3884 (2004)]. This lower electron lifetime suggests an increase in depletion region recombination and thus in the reverse saturation current (J0 for an n+/p diode compared with a p+/n diode at a given TDD. To confirm this, GaAs diodes of both polarities were grown on compositionally graded Ge /Si1-xGex/Si (SiGe) substrates with a TDD of 1×106cm-2. It is shown that the ratio of measured J0 values is consistent with the inverse ratio of the expected lifetimes. Using a TDD-dependent lifetime in solar cell current-voltage models we found that the Voc, for a given short-circuit current, also exhibits a poorer TDD tolerance for GaAs n+/p solar cells compared with GaAs p+/n solar cells. Experimentally, the open-circuit voltage (Voc) for the n+/p GaAs solar cell grown on a SiGe substrate with a TDD of ˜1×106cm-2 was ˜880mV which was significantly lower than the ˜980mV measured for a p+/n GaAs solar cell grown on SiGe at the same TDD and was consistent with the solar cell modeling results reported in this paper. We conclude that p+/n polarity GaAs junctions demonstrate superior dislocation tolerance than n+/p configured GaAs junctions, which is important for optimization of lattice-mismatched III-V devices.

  4. (t-Bu)2PN=P(i-BuNCH2CH2)3N: new efficient ligand for palladium-catalyzed C-N couplings of aryl and heteroaryl bromides and chlorides and for vinyl bromides at room temperature.

    PubMed

    Reddy, Ch Venkat; Kingston, Jesudoss V; Verkade, John G

    2008-04-18

    By employing Pd(OAc)2, Cs2CO3, or NaOH, and the new ligand (t-Bu)2PN=P(i-BuNCH2CH2)3N (3a), an electronically diverse array of aryl bromides and chlorides possessing base-sensitive substituents (nitro, ester, and keto) provide coupling products with bulky aryl amines in good to excellent yields. Aryl halides possessing other functional groups including cyano, amino, trifluoromethyl, and phenol, coupled with equal ease, producing highly functionalized amines in good to excellent yields. Moreover, an aryl chloro group can be preserved in the presence of a bromo substituent under our reaction conditions. BOC-protected amines also participated efficiently. Heterocyclic bromides and chlorides underwent clean couplings with amines in excellent yields. An important strength of our protocol is the use of lower palladium loadings than those reported earlier, without compromising yields. The air-stable palladium complex (eta3-cinnamyl)PdCl.(3a) (5) was also employed successfully in C-N coupling reactions while the crotyl analogue was less efficacious. The 3a/Pd(OAc)2 catalyst system promotes, for the first time, efficient coupling of vinyl bromides with a variety of amines to produce imines and enamines at room temperature.

  5. Effect of high pN2 and high pD2 on NH3 production, H2 evolution, and HD formation by nitrogenases

    SciTech Connect

    Jensen, B.B.; Burris, R.H.

    1985-02-26

    We have investigated the effect of the partial pressure of N2 and D2 on HD formation, H2 evolution, and NH3 production by nitrogenase from Klebsiella pneumoniae and Clostridium pasteurianum. By using pressures up to 4 atm, we have been able to extend the concentration range of N2 and D2 in our investigations beyond that used in previous studies. The pN2 dependence of HD formation with constant pD2 ideally shows no HD formation under zero pN2, reaches a peak which depends on the pD2, and then decreases to zero at very high pN2. K. pneumoniae and C. pasteurianum nitrogenases differ in their Ki(D2) for nitrogen fixation. C. pasteurianum nitrogenase had the lower activity for formation of HD. With K. pneumoniae nitrogenase, D2 enhanced H2 evolution from 31% of the electron flux partitioned to H2 in the absence of D2 to 51% of the electron flux partitioned to H2 at 400 kPa of D2. With C. pasteurianum nitrogenase, the equivalent values were 33% and 48% of the total electron flux. Our results support previou findings on the mechanism for nitrogenase-catalyzed reductions proposed by W. W. Cleland.

  6. On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

    NASA Astrophysics Data System (ADS)

    Wang, Yongjin; Zhu, Guixia; Cai, Wei; Gao, Xumin; Yang, Yongchao; Yuan, Jialei; Shi, Zheng; Zhu, Hongbo

    2016-04-01

    We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

  7. Spectral properties of a lateral p-n homojunction-structured visible silicon light-emitting diode fabricated by dressed-photon-phonon-assisted annealing

    NASA Astrophysics Data System (ADS)

    Yamaguchi, M.; Kawazoe, T.; Yatsui, T.; Ohtsu, M.

    2015-12-01

    We developed a visible silicon light-emitting diode (Si-LED) with a lateral p-n homojunction using dressed-photon-phonon (DPP)-assisted annealing. The lateral p-n homojunction was fabricated in order to decrease the absorption loss inherent in light emission with a photon energy higher than the band-gap energy of the material. The fabricated Si-LED emitted light in the entire visible range, including the three primary colors. The light extraction efficiency of the Si-LED was estimated to be 7.8 times higher than that of a conventional LED structure with a vertical p-n homojunction. Owing to the efficient light extraction, we clearly observed two novel features in the electroluminescence (EL) spectrum: a nonlinear increase in the EL intensity with the injected forward current, and an emission peak at 2.7 eV, at which there is no singular point in the electronic structure. From these features, we concluded that the EL from the Si-LED originated from the phonon-assisted radiative recombination of carriers with much higher energy than that of the bottom of the conduction band, via DPPs.

  8. How soft is a single protein? The stress-strain curve of antibody pentamers with 5 pN and 50 pm resolutions.

    PubMed

    Perrino, Alma P; Garcia, Ricardo

    2016-04-28

    Understanding the mechanical functionalities of complex biological systems requires the measurement of the mechanical compliance of their smallest components. Here, we develop a force microscopy method to quantify the softness of a single antibody pentamer by measuring the stress-strain curve with force and deformation resolutions, respectively, of 5 pN and 50 pm. The curve shows three distinctive regions. For ultrasmall compressive forces (5-75 pN), the protein's central region shows that the strain and stress are proportional (elastic regime). This region has an average Young's modulus of 2.5 MPa. For forces between 80 and 220 pN, the stress is roughly proportional to the strain with a Young's modulus of 9 MPa. Higher forces lead to irreversible deformations (plastic regime). Full elastic recovery could reach deformations amounting to 40% of the protein height. The existence of two different elastic regions is explained in terms of the structure of the antibody central region. The stress-strain curve explains the capability of the antibody to sustain multiple collisions without any loss of biological functionality.

  9. Device characteristics of the PnP AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistor

    SciTech Connect

    CHANG,PING-CHIH; LI,N.Y.; LAROCHE,J.R.; BACA,ALBERT G.; HOU,H.Q.; REN,F.

    2000-02-09

    The authors have demonstrated a functional PnP double heterojunction bipolar transistor (DHBT) using AlGaAs, InGaAsN, and GaAs. The band alignment between InGaAsN and GaAs has a large {triangle}E{sub C} and a negligible {triangle}E{sub V}, and this unique characteristic is very suitable for PnP DHBT applications. The metalorganic vapor phase epitaxy (MOCVD) grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs PnP DHBT is lattice matched to GaAs and has a peak current gain of 25. Because of the smaller bandgap (Eg = 1.20 eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, which is 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. And because GaAs is used for the collector, its BV{sub CEO} is 12 V, consistent with BV{sub CEO} of AlGaAs/GaAs HBTs of comparable collector thickness and doping level.

  10. Yield and yield gaps in central U.S. corn production systems

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The magnitude of yield gaps (YG) (potential yield – farmer yield) provides some indication of the prospects for increasing crop yield. Quantile regression analysis was applied to county maize (Zea mays L.) yields (1972 – 2011) from Kentucky, Iowa and Nebraska (irrigated) (total of 115 counties) to e...

  11. Application of the INSTANT-HPS PN Transport Code to the C5G7 Benchmark Problem

    SciTech Connect

    Y. Wang; H. Zhang; R. H. Szilard; R. C. Martineau

    2011-06-01

    INSTANT is the INL's next generation neutron transport solver to support high-fidelity multi-physics reactor simulation INSTANT is in continuous development to extend its capability Code is designed to take full advantage of middle to large cluster (10-1000 processors) Code is designed to focus on method adaptation while also mesh adaptation will be possible. It utilizes the most modern computing techniques to generate a neutronics tool of full-core transport calculations for reactor analysis and design. It can perform calculations on unstructured 2D/3D triangular, hexagonal and Cartesian geometries. Calculations can be easily extended to more geometries because of the independent mesh framework coded with the model Fortran. This code has a multigroup solver with thermal rebalance and Chebyshev acceleration. It employs second-order PN and Hybrid Finite Element method (PNHFEM) discretization scheme. Three different in-group solvers - preconditioned Conjugate Gradient (CG) method, preconditioned Generalized Minimal Residual Method (GMRES) and Red-Black iteration - have been implemented and parallelized with the spatial domain decomposition in the code. The input is managed with extensible markup language (XML) format. 3D variables including the flux distributions are outputted into VTK files, which can be visualized by tools such as VisIt and ParaView. An extension of the code named INSTANTHPS provides the capability to perform 3D heterogeneous transport calculations within fuel pins. C5G7 is an OECD/NEA benchmark problem created to test the ability of modern deterministic transport methods and codes to treat reactor core problems without spatial homogenization. This benchmark problem had been widely analyzed with various code packages. In this transaction, results of the applying the INSTANT-HPS code to the C5G7 problem are summarized.

  12. Scalable large-area solid-state neutron detector with continuous p-n junction and extremely low leakage current

    NASA Astrophysics Data System (ADS)

    Huang, Kuan-Chih; Dahal, Rajendra; Lu, James J.-Q.; Weltz, Adam; Danon, Yaron; Bhat, Ishwara B.

    2014-11-01

    We report on the fabrication and characterization of solid-state thermal neutron detectors with detection areas up to 16 cm2 that require only a single preamplifier for data acquisition. These detectors consist of a honeycomb-like micro-structured Si diode with boron-10 filled deep holes. A continuous p-n junction formed over the entire surface of the microstructure helps to achieve a low leakage current density of ~6.1×10-9 A/cm2 at -1 V for a 2.5×2.5 mm2 detector. This low leakage current results in low electronic noise, which enables the fabrication of large-area detectors. An intrinsic thermal neutron detection efficiency of up to 26% was measured for a 2.5×2.5 mm2 detector module and up to 24% was measured for a 1 cm2 detector module. These measurements were obtained under zero bias voltage using a moderated californium-252 source. The relative efficiency remains almost the same when scaling the detector area up to 8 cm2 by connecting 1 cm2 detector modules in series. However, it decreases to 0.89 and 0.82, respectively, for 12 and 16 cm2. Nevertheless, these results demonstrate the promise of using boron filled micro-structured Si diodes as a cost effective alternative to the helium-3 based neutron detection technology and the potential of fabricating scalable large-area solid-state neutron detectors that are desirable for many applications.

  13. Yield model development project implementation plan

    NASA Technical Reports Server (NTRS)

    Ambroziak, R. A.

    1982-01-01

    Tasks remaining to be completed are summarized for the following major project elements: (1) evaluation of crop yield models; (2) crop yield model research and development; (3) data acquisition processing, and storage; (4) related yield research: defining spectral and/or remote sensing data requirements; developing input for driving and testing crop growth/yield models; real time testing of wheat plant process models) and (5) project management and support.

  14. Method for improving reformer yield selectivity

    SciTech Connect

    Ramella, A.; Wang, H. Y.

    1985-11-05

    Yield selectivity of a multibed catalytic reformer operating below design capacity is enhanced by adjusting inlet temperature of at least one catalyst bed to nearquenching conditions while adjusting the inlet temperature of at least one catalyst bed to favor yield selective reforming reactions. Significant increases in C/sub 5/+ yields are obtained without any modification of the reforming unit.

  15. SOME QUESTIONS OF EVALUATION OF YIELD MAPS

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The ultimate goal for the application of yield maps is to provide profitable crop output in farming systems. Recently, several methods and tools have been developed for the evaluation of yield maps. It is based on crisp and fuzzy modeling. However, the process of evaluation of yield maps is full o...

  16. Heterois in Switchgrass: Biomass Yield in Swards

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Improving the biomass yield of switchgrass (Panicum virgatum L.) will improve its utility as a dedicated energy crop by increasing energy yield per acre. In a previous space-transplanted study, mid-parent heterosis for biomass yield was reported for population and specific F1 hybrids of the lowland-...

  17. Outcome of pN0 Triple-Negative Breast Cancer with or without Lymph Node Irradiation: A Single Institution Experience.

    PubMed

    Khalifa, Jonathan; Duprez-Paumier, Raphaelle; Filleron, Thomas; Lacroix Triki, Magali; Jouve, Eva; Dalenc, Florence; Massabeau, Carole

    2016-09-01

    The optimal management of patients with pathologically node-negative triple-negative breast cancer (pN0 TNBC) remains unclear. We hypothesized that lymph node irradiation (LNI; internal mammary chain/periclavicular irradiation) had an impact on outcomes of pN0 TNBC. A cohort of 126 consecutive patients with pN0 TNBC treated between 2007 and 2010 at a single institute were included. All radiotherapy (breast/chest wall, ±LNI) was delivered adjuvantly, following completion of surgery ± chemotherapy. Tumors were reviewed and histologic features were described. Tissue microarrays were constructed and tumors were assessed by immunohistochemistry using antibodies against ER, PR, HER2, Ki-67, cytokeratins 5/6, 14, epidermal growth factor receptor and androgen receptor. Patients were divided into two groups for statistical analysis: LNI (LNI+) or no LNI (LNI-). We focused on disease-free survival (DFS), metastasis-free survival (MFS), and overall survival (OS). Fifty-seven and 69 patients received or not LNI, respectively. Median age was 52 (range [25-76]) and 55 (range [29-79]) in LNI+ and LNI- group (p = 0.23). LNI was associated with larger tumors (p = 0.033), central/internal tumors (33 versus 4, p < 0.01) and more chemotherapy (86% versus 59.4% p < 0.01). The median follow-up was 53.5 months. The rate of first regional relapse (associated or not with distant relapse) was low in both groups. There was no difference in 4-year DFS (82.2% versus 89.9%; p = 0.266), MFS (87.0% versus 91.1%; p = 0.286) and OS (85.8% versus 89.9%; p = 0.322) between LNI+ and LNI- group, respectively. In univariate analysis, only clinical size (T >10 mm versus ≤10 mm), histologic size (pT >10 mm versus ≤10 mm) and grade 3 (versus grade 2) were found to be significantly associated with shorter DFS. Omission of LNI in patients with pN0 TNBC does not seem to result in poorer outcome. Further studies are needed to specifically evaluate LNI in pN0 TNBC with histologic grade

  18. Differential effect of organic and plastic mulches on Cyperus rotundus suppression and Citrullus lanatus (watermelon) fruit yield

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Cyperus rotundus (Purple nutsedge) [PN] is commonly referred to as one of the worst weeds of the world. In Puerto Rico, PN is among the most troublesome weeds in production systems where synthetic herbicides are not utilized. Alternative methods for PN management, such as mulching, may be valuable ...

  19. Three pro-nuclei (3PN) incidence factors and clinical outcomes: a retrospective study from the fresh embryo transfer of in vitro fertilization with donor sperm (IVF-D)

    PubMed Central

    Li, Mingzhao; Zhao, Wanqiu; Xue, Xia; Zhang, Silin; Shi, Wenhao; Shi, Juanzi

    2015-01-01

    Objectives: The aim of this study was to explore the main factors of 3PN incidence and determine whether the presence of 3PN could lead to a worse pregnancy outcome. Methods: This study included 508 IVF-D (in vitro fertilization with donor sperm) cycles from January 2013 to September 2014. The patients were divided into three groups as follows: group 1 included patients with no 3PN zygotes, group 2 included patients with 1%-25% 3PN zygotes and group 3 included patients with > 25% 3PN zygotes. Results: We observed that more retrieved oocytes and higher HCG day peak E2 value could result in 3PN incidence more easily. When the 3PN zygotes rate was > 25%, the percentages of normal fertilization (68.4% and 66.3% and 46.4%, P < 0.001), day 3 grade I+II embryos (41.2% and 38.6% and 25.8%, P < 0.001), day 3 grade I+II+III embryos (68.7% and 65.2% and 61.4%, P = 0.032) and implantation rates (52.1% and 50.8% and 45.4%, P = 0.026) were significantly lower than that in the other two groups respectively. The pregnancy rate was lower in 3PN > 25% group than that in the other two groups but there was no significant difference (65.2% and 66.7% and 55.6%, P = 0.266). The cleavage (98.3% and 97.2% and 98.2%, P = 0.063) and early abortion (7.1% and 8.0% and 8.6%, P = 0.930) rate were identical among three groups. Conclusions: More retrieved oocytes and higher HCG day peak E2 value could result in 3PN incidence more easily. Interestingly, normal fertilization rate, day-3 grade I+II embryos rate, day-3 grade I+II+III embryos rate and implantation rate were significantly lower in IVF-D cycles with a 3PN incidence of > 25%. The number of day-3 grade I+II embryos might be a key factor for pregnancy in IVF-D cycles with a 3PN incidence of > 25%. PMID:26550358

  20. Pioneer 12 (PN-12)

    NASA Technical Reports Server (NTRS)

    Lozier, D.; Fimmel, R.

    1991-01-01

    The DSN (Deep Space Network) mission support requirements for Pioneer 12 are summarized. The Pioneer 12 spacecraft is in a 24-hour elliptical orbit around Venus. Atmospheric and altimetry data are obtained mainly around periapsis, and planetary imaging is normally performed around apoapsis. The Pioneer 12 mission objectives are outlined and the DSN support requirements are defined through the presentation of tables and narratives describing the spacecraft flight profile; DSN support coverage; frequency assignments; support parameters for telemetry, command and support systems; and tracking support responsibility.

  1. Linking Drought Information to Crop Yield

    NASA Astrophysics Data System (ADS)

    Madadgar, S.; Farahmand, A.; Li, L.; Aghakouchak, A.

    2015-12-01

    Droughts have detrimental impacts on agricultural yields all over the world every year. This study analyzes the relationship between three drought indicators including Standardized Precipitation Index (SPI); Standardized Soil Moisture Index (SSI), Multivariate Standardized Drought Index (MSDI) and the yields of five largest rain-fed crops in Australia (wheat, broad beans, canola, lupins and barley). Variation of the five chosen crop yields is overall in agreement with the three drought indicators SPI, SSI, and MSDI during the analysis period of 1980-2012. This study develops a bivariate copula model to investigate the statistical dependence of drought and crop yield. Copula functions are used to establish the existing connections between climate variables and crop yields during the Millennium drought in Australia. The proposed model estimates the likelihood of crop yields given the observed or predicted drought indicators SPI, SSI or MSDI. The results are also useful to estimate crop yields associated with different thresholds of precipitation or soil moisture.

  2. Rectal site and suboptimal nodal yield predict systemic recurrence in resected colorectal carcinoma: a case-control study.

    PubMed

    Hayes, Brian D; O'Riordan, James M; Stuart, Charlotte; Muldoon, Cian

    2014-09-01

    We assessed the contribution of histopathological features to systemic recurrence (SR) in patients with colorectal cancer, using a case-control design: 71 cases and 184 controls were included, with a mean time until SR of 1.4 ± 0.1 years and a mean follow-up of controls of 1.6 ± 0.06 years. Cases had significantly greater odds of rectal site (odds ratio [OR] = 1.82), stage ≥ pT3 (OR = 2.11), suboptimal (<12) lymph node yield (OR = 4.6), stage ≥ pN1 (OR = 2.46), KRAS mutation (OR = 2.76), and extramural venous invasion (OR = 1.97). By multiple regression analysis, rectal site, stage ≥ pT3, suboptimal lymph node yield, and lymph node positivity independently predicted SR. Rectal cancers were more likely to have a suboptimal node yield than nonrectal cancers (relative risk = 1.6) among the entire cohort. We conclude that rectal cancers have greater risk of SR than colon cancers. A lower yield of lymph nodes in rectal cancer specimens may contribute to this.

  3. Assessment of Potential Yield andClimate Change Sensitivity of Peanut Crop in Cagayan Valley, Philippines using DSSAT Simulation Model

    NASA Astrophysics Data System (ADS)

    Balderama, O. F.

    2013-12-01

    Peanut is a major upland crop in Cagayan Valley and a leguminous crop that requires less water and therefore, considered an important crop in improving productivity of upland and rainfed areas. However, little information is available on the potential productivity of the crop and analysis on the production constraints including climate change sensitivity. This study was aimed to determine yield potential and production constraints of peanut crop in Cagayan Valley through the use of Decision Support System for Agrotechnology Transfer (DSSAT) simulation modeling; analyze yield gaps between simulated and actual yield levels and to provide decision support to further optimize peanut production under climate change condition. Site of experiment for model calibration and validation was located on-station at Isabela State University, Echague, Isabela. Rainfall and other climatic variables were monitored using a HOBO weather station (Automatic Weather Station) which is strategically installed inside experimental zone.The inputs required to run the CSM model include information on soil and weather conditions, crop management practices and cultivar specific genetic coefficients. In the first step,a model calibration was conducted to determine the cultivar coefficients for certain peanut cultivar that are normally grown in Cagayan Valley. Crop growth and yield simulation modeling was undertaken using the Decision Support System for Agro-Technology Transfer (DSSAT) for small seeded peanut (Pn9). An evaluation of the CSM-CROPGRO-peanut model was performed with data sets from peanut experiment conducted from December 2011 to April 2012. The model was evaluated in the estimation of potential yield of peanut under rainfed condition and low-nitrogen application. Yield potential for peanut limited only by temperature and solar radiation and no-water and nutrient stress, ranged from 3274 to 4805 kg per hectare for six planting dates (October 1, October 15, November 1, November 15

  4. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    NASA Technical Reports Server (NTRS)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  5. Silver(i) complexes with a P-N hybrid ligand and oxyanions: synthesis, structures, photocatalysis and photocurrent responses.

    PubMed

    Wang, Jian-Feng; Liu, Shi-Yuan; Liu, Chun-Yu; Ren, Zhi-Gang; Lang, Jian-Ping

    2016-06-14

    Reactions of a P-N hybrid ligand, N,N-bis(diphenylphosphanylmethyl)-3-aminopyridine (3-bdppmapy), with silver oxysalts including AgNO3, AgOAc, AgBz (Bz = benzoate) and AgSal (Sal = salicylate) under different reaction conditions give rise to seven coordination compounds {[Ag4(μ-η,η-NO3)2(μ-η,η(2)-NO3)2](3-bdppmapy)2}n (1), {[Ag4(μ-η,η(2)-NO3)4](3-bdppmapy)2}n (2), {[Ag2(μ-η(2)-OAc)(μ-η,η(2)-OAc)]2(3-bdppmapy)2}n (3), [Ag2(Bz)(μ-η,η(2)-Bz)(H2O)]2(3-bdppmapy)2 (4), {[Ag4(μ-η(2)-Bz)2(μ-η,η(2)-Bz)2](3-bdppmapy)2}n (5), {Ag(Sal)(3-bdppmapy)}n (6) and {[Ag4(Sal)2(μ-η,η(2)-Sal)2](3-bdppmapy)2}n (7). Single crystal X-ray analyses reveal that 1, 5 and 7 have similar 1D chain structures constructed by [Ag4(μ-η(2)-Ox)2(μ-η,η(2)-Ox)2] units (1: Ox(-) = NO3(-); 5: Ox(-) = Bz(-)) or [Ag4(Sal)2(μ-η,η(2)-Sal)2] units (7) and double 3-bdppmapy bridges. Compound 2 has a 2D layer structure derived from [Ag4(μ-η,η(2)-NO3)4] units and single 3-bdppmapy bridges. 3 displays another 2D layer structure formed by [Ag2(μ-η(2)-OAc)(μ-η,η(2)-OAc)] units and double 3-bdppmapy bridges. 4 shows a discrete tetranuclear structure formed by two [Ag2(Bz)(η,η(2),μ-Bz)(H2O)] units and a pair of 3-bdppmapy bridges, while 6 adopts a 1D chain composed by [AgSal] units and single 3-bdppmapy bridges. 6 and 7 as representative samples display high catalytic activity toward the photodegradation of rhodamine B (RhB) in water. Compound 7 shows a better photocatalytic performance than that of 6, which correlates well with the differences in their anodic photocurrent responses and their HOMO-LUMO energy gaps derived from the density function theory (DFT) calculations. The formation of 6 and 7 from AgSal and 3-bdppmapy provides a new approach to the design and assembly of Ag(i)-supported CPs with interesting structural architectures and higher photocatalytic activity.

  6. Yields of bedrock wells in Massachusetts

    USGS Publications Warehouse

    Hansen, B.P.; Simcox, A.C.

    1994-01-01

    Six to seven percent of the population of Massachusetts obtains its water from domestic bedrock wells. Additional public, commercial, industrial, and domestic supplies from bedrock will be needed in the future. Information about the factors that are related to large well yields is needed. The factors associated with well yields were identified by use of statistical analysis of reported data from 4,218 bedrock wells. The median reported yield of all bedrock wells was 7 gallons per minute, and the median depth was 170 feet. Wells in valleys and lowlands had the largest median yield--I0 gallons per minute. The median well yield on hilltops and slopes was 6 gallons per minute. In valleys and lowlands, significant increases in well yields corresponded to increasing thickness of overburden. On hilltops and slopes, only small increases in well yield corresponded to increases in overburden thickness. Increases in well diameter corresponded to significant increases in well yields for all well locations, depths, and use categories. The common assumptions that fractured crystalline rocks generally yield only small quantities of water to wells and that the fractures that yield water to wells pinch out or are closed because of lithostatic pressure at depths greater than 300 to 400 feet may be in error. Analysis of well data indicates that the median yield of all bedrock wells decreased as well depth increased to 400 feet and increased slightly with well depths greater than 600 feet. The median yield of bedrock wells located in valleys and lowlands reached 50 gallons per minute at depths of 600 to 700 feet. The median yield of wells located on hilltops and slopes reached 15 gallons per minute at depths of 600 to 700 feet. Carbonate bedrock, with a median well yield of 25 gallons per minute, seemed to be the most productive bedrock type. A reported yield of 1,700 gallons per minute from an industrial well completed in carbonate bedrock is the largest reported yield from a bedrock

  7. Uncertainty analysis for water supply reservoir yields

    NASA Astrophysics Data System (ADS)

    Kuria, Faith; Vogel, Richard

    2015-10-01

    Understanding the variability of water supply reservoir yields is central for planning purposes. The basis of this study is an empirical global relationship between reservoir storage capacity, water supply yield and reliability based on a global database of 729 rivers. Monte Carlo simulations reveal that the coefficient of variation of estimates of water supply reservoir yields depend only on the length of streamflows record and the coefficient of variation of the streamflows used to estimate the yield. We compare the results of those Monte Carlo experiments with an analytical uncertainty method First Order Variance Approximation (FOVA). FOVA is shown to produce a general, accurate and useful expression for estimating the coefficient of variation of water supply reservoir yield estimates. We also document how the FOVA analytical model can be used to determine the minimum length of streamflow record required during the design of water supply reservoirs so as to ensure that the yield delivered from reservoir falls within a prespecified margin of error.

  8. Seismological Discrimination and Yield Determination Research

    DTIC Science & Technology

    1980-02-01

    yield for NTS granodiorite . . . 31 iii 9 . . LIST OF ILLUSTRATIONS (continued) Figure Page 18. mb versus yield for NTS granodiorite . . . 32 19...depth of burial on surface wave and body wave magnitudes. The rock environ- ment was NTS fractured granodiorite . Near field data from the PILEDRIVER...Figure 17. M s versus yield for NTS granodiorite . 𔃺 31 SYSTEMS. SCIENCE AND SOFTWARE 0 c 3: C Cc -M4 co Z=_ CU .,., 32 SvSTEM S SCIE’NCE AND

  9. Comparative yield estimation via shock hydrodynamic methods

    SciTech Connect

    Attia, A.V.; Moran, B.; Glenn, L.A.

    1991-06-01

    Shock TOA (CORRTEX) from recent underground nuclear explosions in saturated tuff were used to estimate yield via the simulated explosion-scaling method. The sensitivity of the derived yield to uncertainties in the measured shock Hugoniot, release adiabats, and gas porosity is the main focus of this paper. In this method for determining yield, we assume a point-source explosion in an infinite homogeneous material. The rock is formulated using laboratory experiments on core samples, taken prior to the explosion. Results show that increasing gas porosity from 0% to 2% causes a 15% increase in yield per ms/kt{sup 1/3}. 6 refs., 4 figs.

  10. Wheat yield forecasts using LANDSAT data

    NASA Technical Reports Server (NTRS)

    Colwell, J. E.; Rice, D. P.; Nalepka, R. F.

    1977-01-01

    Several considerations of winter wheat yield prediction using LANDSAT data were discussed. In addition, a simple technique which permits direct early season forecasts of wheat production was described.

  11. Crop status evaluations and yield predictions

    NASA Technical Reports Server (NTRS)

    Haun, J. R.

    1976-01-01

    One phase of the large area crop inventory project is presented. Wheat yield models based on the input of environmental variables potentially obtainable through the use of space remote sensing were developed and demonstrated. By the use of a unique method for visually qualifying daily plant development and subsequent multifactor computer analyses, it was possible to develop practical models for predicting crop development and yield. Development of wheat yield prediction models was based on the discovery that morphological changes in plants are detected and quantified on a daily basis, and that this change during a portion of the season was proportional to yield.

  12. The Promher Study: An Observational Italian Study on Adjuvant Therapy for HER2-Positive, pT1a-b pN0 Breast Cancer

    PubMed Central

    Gori, Stefania; Inno, Alessandro; Fiorio, Elena; Foglietta, Jennifer; Ferro, Antonella; Gulisano, Marcella; Pinotti, Graziella; Gubiotti, Marta; Cavazzini, Maria Giovanna; Turazza, Monica; Duranti, Simona; De Simone, Valeria; Iezzi, Laura; Bisagni, Giancarlo; Spazzapan, Simon; Cavanna, Luigi; Saggia, Chiara; Bria, Emilio; Cretella, Elisabetta; Vici, Patrizia; Santini, Daniele; Fabi, Alessandra; Garrone, Ornella; Frassoldati, Antonio; Amaducci, Laura; Saracchini, Silvana; Evangelisti, Lucia; Barni, Sandro; Gamucci, Teresa; Mentuccia, Lucia; Laudadio, Lucio; Zoboli, Alessandra; Marchetti, Fabiana; Bogina, Giuseppe; Lunardi, Gianluigi; Boni, Luca

    2015-01-01

    Background The management of pT1a-b pN0 HER2-positive breast cancer is controversial and no data about the efficacy of trastuzumab in this setting are available from randomized clinical trials. The aims of this retrospective study were to assess how patients are managed in clinical practice in Italy, which clinical or biological characteristics influenced the choice of adjuvant systemic therapy and the outcome of patients. Methods Data of consecutive patients who underwent surgery from January 2007 to December 2012 for HER2-positive, pT1a-b pN0 M0 breast cancer were retrospectively collected from 28 Italian centres. Analysis of contingency tables and multivariate generalized logit models were used to investigate the association between the baseline clinical and biological features and the treatment strategy adopted. Results Among 303 enrolled patients, 204 received adjuvant systemic therapy with trastuzumab, 65 adjuvant systemic therapy without trastuzumab and 34 did not receive adjuvant systemic therapy. At the multivariate analysis age, tumor size, proliferation index and hormone receptor status were significantly associated with the treatment choice. Five-year disease-free survival (DFS) probability was 95%, 94.3% and 69.6% for patients treated with adjuvant systemic therapy and trastuzumab, with adjuvant systemic therapy without trastuzumab and for patients who did not receive adjuvant systemic therapy, respectively (p<0.001). Conclusions The majority of patients (66%) with pT1a-b pN0 HER2-positive breast cancer enrolled in this retrospective study received adjuvant systemic therapy with trastuzumab, whereas only 11% patients did not receive any adjuvant systemic therapy. The choice of treatment type seems to be mainly influenced by tumor size, proliferation index, hormone receptor status and age. The 5-year DFS probability was significantly higher for patients receiving adjuvant systemic therapy with trastuzumab compared with patients not receiving adjuvant

  13. Al00.3Ga0.7N PN diode with breakdown voltage >1600 V

    SciTech Connect

    Allerman, A. A.; Armstrong, A. M.; Fischer, A. J.; Dickerson, J. R.; Crawford, M. H.; King, M. P.; Moseley, M. W.; Wierer, J. J.; Kaplar, R. J.

    2016-07-21

    Demonstration of Al00.3Ga0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm2 is limited by the lateral conductivity of the n-type contact layer required by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (Vbr2/Rspec,on) of 150 MW/cm2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.

  14. The MYLIP p.N342S polymorphism is associated with response to lipid-lowering therapy in Brazilian patients with familial hypercholesterolemia

    PubMed Central

    Santos, Paulo C.J.L.; Morgan, Aline C.; Jannes, Cinthia E.; Krieger, José E.; Santos, Raul D.

    2014-01-01

    Background A previous study reported that the myosin regulatory light chain interacting protein (MYLIP) might serve as a novel therapeutic class for treating dyslipidemia. It contributes to variations in the levels of circulating low-density lipoprotein cholesterol (LDL-C), promoting the degradation of LDL–LDLR, thus limiting absorption. The effect of genetic variation in the MYLIP gene in a disease scenario characterized by mutations in the LDLR gene has not been previously evaluated. Objective The aim of this study was to assess the effect of the p.N342S variant on the response to lipid-lowering therapy in Brazilian patients with heterozygous familial hypercholesterolemia (FH). Patients and methods A total of 156 patients with heterozygous FH were followed up for 12 months and received lipid-lowering therapy (different doses of atorvastatin with the addition of ezetimibe in over half the patients of each genotype group). Cholesterol data were assessed, and analysis of the MYLIP rs9370867 (p.N342S) genotypes was carried out by melting curve analysis. Results Baseline total cholesterol and baseline LDL-C levels were not different between genotypes. After 1 year of treatment, LDL-C responses (expressed as mg/dl and as %) were significantly different among genotypes (AA: −79±68 and −39±27, GA: −60±79 and −27±32, and GG: −30±83 and −15±38; P=0.02 and 0.005, respectively). In addition, FH patients carrying the AA genotype were more likely to achieve LDL-C levels of less than 130 mg/dl after 1 year of treatment (75.0%) compared with patients with the GG and GA genotypes (34.5 and 34.8%, respectively; P=0.001). Conclusion Our study indicates that MYLIP p.N342S might be a pharmacogenetic marker for lipid-lowering therapy in patients with FH. PMID:25171759

  15. Colonic GLP-2 is not Sufficient to Promote Jejunal Adaptation in a PN-Dependent Rat Model of Human Short Bowel Syndrome

    PubMed Central

    Koopmann, Matthew C.; Liu, Xiaowen; Boehler, Christopher J.; Murali, Sangita G.; Holst, Jens J.; Ney, Denise M.

    2013-01-01

    Background Bowel resection may lead to short bowel syndrome (SBS), which often requires parenteral nutrition (PN) due to inadequate intestinal adaptation. The objective of this study was to determine the time course of adaptation and proglucagon system responses after bowel resection in a PN-dependent rat model of SBS. Methods Rats underwent jugular catheter placement and a 60% jejunoileal resection + cecectomy with jejunoileal anastomosis or transection control surgery. Rats were maintained exclusively with PN and killed at 4 hours to 12 days. A nonsurgical group served as baseline. Bowel growth and digestive capacity were assessed by mucosal mass, protein, DNA, histology, and sucrase activity. Plasma insulin-like growth factor I (IGF-I) and bioactive glucagon-like peptide 2 (GLP-2) were measured by radioimmunoassay. Results Jejunum cellularity changed significantly over time with resection but not transection, peaking at days 3–4 and declining by day 12. Jejunum sucrase-specific activity decreased significantly with time after resection and transection. Colon crypt depth increased over time with resection but not transection, peaking at days 7–12. Plasma bioactive GLP-2 and colon proglucagon levels peaked from days 4–7 after resection and then approached baseline. Plasma IGF-I increased with resection through day 12. Jejunum and colon GLP-2 receptor RNAs peaked by day 1 and then declined below baseline. Conclusions After bowel resection resulting in SBS in the rat, peak proglucagon, plasma GLP-2, and GLP-2 receptor levels are insufficient to promote jejunal adaptation. The colon adapts with resection, expresses proglucagon, and should be preserved when possible in massive intestinal resection. PMID:19644131

  16. High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films

    SciTech Connect

    Qian, J. C.; Jha, S. K. E-mail: apwjzh@cityu.edu.hk; Wang, B. Q.; Jelenković, E. V.; Bello, I.; Klemberg-Sapieha, J. E.; Martinu, L.; Zhang, W. J. E-mail: apwjzh@cityu.edu.hk

    2014-11-10

    Boron carbon nitride (BCN) films were synthesized on Si (100) and fused silica substrates by radio-frequency magnetron sputtering from a B{sub 4}C target in an Ar/N{sub 2} gas mixture. The BCN films were amorphous, and they exhibited an optical band gap of ∼1.0 eV and p-type conductivity. The BCN films were over-coated with ZnO nanorod arrays using hydrothermal synthesis to form BCN/ZnO-nanorods p-n heterojunctions, exhibiting a rectification ratio of 1500 at bias voltages of ±5 V.

  17. Model of a tunneling current in a p-n junction based on armchair graphene nanoribbons - an Airy function approach and a transfer matrix method

    NASA Astrophysics Data System (ADS)

    Suhendi, Endi; Syariati, Rifki; Noor, Fatimah A.; Kurniasih, Neny; Khairurrijal

    2014-03-01

    We modeled a tunneling current in a p-n junction based on armchair graphene nanoribbons (AGNRs) by using an Airy function approach (AFA) and a transfer matrix method (TMM). We used β-type AGNRs, in which its band gap energy and electron effective mass depends on its width as given by the extended Huckel theory. It was shown that the tunneling currents evaluated by employing the AFA are the same as those obtained under the TMM. Moreover, the calculated tunneling current was proportional to the voltage bias and inversely with temperature.

  18. Model of a tunneling current in a p-n junction based on armchair graphene nanoribbons - an Airy function approach and a transfer matrix method

    SciTech Connect

    Suhendi, Endi; Syariati, Rifki; Noor, Fatimah A.; Khairurrijal; Kurniasih, Neny

    2014-03-24

    We modeled a tunneling current in a p-n junction based on armchair graphene nanoribbons (AGNRs) by using an Airy function approach (AFA) and a transfer matrix method (TMM). We used β-type AGNRs, in which its band gap energy and electron effective mass depends on its width as given by the extended Huckel theory. It was shown that the tunneling currents evaluated by employing the AFA are the same as those obtained under the TMM. Moreover, the calculated tunneling current was proportional to the voltage bias and inversely with temperature.

  19. 12.5 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode.

    PubMed

    You, Jong-Bum; Park, Miran; Park, Jeong-Woo; Kim, Gyungock

    2008-10-27

    We present a high speed optical modulation using carrier depletion effect in an asymmetric silicon p-n diode resonator. To optimize coupling efficiency and reduce bending loss, two-step-etched waveguide is used in the racetrack resonator with a directional coupler. The quality factor of the resonator with a circumference of 260 um is 9,482, and the DC on/off ratio is 8 dB at -12V. The device shows the 3dB bandwidth of approximately8 GHz and the data transmission up to 12.5Gbit/s.

  20. THE ORIGIN AND EVOLUTION OF THE HALO PN BoBn 1: FROM A VIEWPOINT OF CHEMICAL ABUNDANCES BASED ON MULTIWAVELENGTH SPECTRA

    SciTech Connect

    Otsuka, Masaaki; Tajitsu, Akito; Hyung, Siek; Izumiura, Hideyuki

    2010-11-01

    We have performed a comprehensive chemical abundance analysis of the extremely metal-poor ([Ar/H] < -2) halo planetary nebula (PN) BoBn 1 based on International Ultraviolet Explorer archive data, Subaru/High-Dispersion Spectrograph spectra, VLT/UVES archive data, and Spitzer/IRS spectra. We have detected over 600 lines in total and calculated ionic and elemental abundances of 13 elements using detected optical recombination lines (ORLs) and collisionally excited lines (CELs). The estimations of C, N, O, and Ne abundances from the ORLs and Kr, Xe, and Ba from the CELs are done the first for this nebula, empirically and theoretically. The C, N, O, and Ne abundances from ORLs are systematically larger than those from CELs. The abundance discrepancies apart from O could be explained by a temperature fluctuation model, and that of O might be by a hydrogen-deficient cold component model. We have detected five fluorine and several slow neutron capture elements (the s-process). The amounts of [F/H], [Kr/H], and [Xe/H] suggest that BoBn 1 is the most F-rich among F-detected PNe and is a heavy s-process element rich PN. We have confirmed dust in the nebula that is composed of amorphous carbon and polycyclic aromatic hydrocarbons with a total mass of 5.8 x 10{sup -6} M{sub sun}. The photoionization models built with non-LTE theoretical stellar atmospheres indicate that the progenitor was a 1-1.5 M{sub sun} star that would evolve into a white dwarf with an {approx}0.62 M{sub sun} core mass and {approx}0.09 M{sub sun} ionized nebula. We have measured a heliocentric radial velocity of +191.6 {+-}1.3 km s{sup -1} and expansion velocity 2V{sub exp} of 40.5 {+-} 3.3 km s{sup -1} from an average over 300 lines. The derived elemental abundances have been reviewed from the standpoint of theoretical nucleosynthesis models. It is likely that the elemental abundances except N could be explained either by a 1.5 M{sub sun} single star model or by a binary model composed of 0.75 M{sub sun

  1. UV and visible light controllable depletion zone of ZnO-polyaniline p-n junction and its application in a photoresponsive sensor.

    PubMed

    Gong, Jian; Li, Yinhua; Deng, Yulin

    2010-12-07

    In this communication, we report that the depletion zone thickness of the p-n junction between an n-type ZnO and a p-type polyaniline could be controlled by UV and visible light illumination. Based on this princile, photoresponsive sensors were constructed by combining polyaniline thin film and ZnO nanorods. Different from pure ZnO nanomaterials whose conductivity increases when they are exposed to UV illumination, the conductivity of the photoresponsive sensor studied in this communication decreased when the UV light was turned on. The surface modification of ZnO could switch the wavelength of the response light from UV to visible light.

  2. A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

    NASA Technical Reports Server (NTRS)

    Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

    1980-01-01

    Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

  3. Interpretation of the Processes 3He(e,e'p)2H and 3He(e,e'p)(pn) at High Missing Momenta

    NASA Astrophysics Data System (ADS)

    Ciofi Degli Atti, C.; Kaptari, L. P.

    2005-07-01

    Using realistic three-body wave functions corresponding to the AV18 interaction, it is shown that the effects of the final state interaction in the exclusive processes 3He(e,e'p)2H and 3He(e,e'p)(pn), can be successfully treated in terms of a generalized eikonal approximation based upon the direct calculation of the Feynman diagrams describing the rescattering of the struck nucleon. The relevant role played by the double rescattering contribution at high values of the missing momentum is illustrated.

  4. Interpretation of the processes 3He(e,e'p)2H and 3He(e,e'p)(pn) at high missing momenta.

    PubMed

    Ciofi degli Atti, C; Kaptari, L P

    2005-07-29

    Using realistic three-body wave functions corresponding to the AV18 interaction, it is shown that the effects of the final state interaction in the exclusive processes 3He(e,e'p)2H and 3He(e,e'p)(pn), can be successfully treated in terms of a generalized eikonal approximation based upon the direct calculation of the Feynman diagrams describing the rescattering of the struck nucleon. The relevant role played by the double rescattering contribution at high values of the missing momentum is illustrated.

  5. Integrated Advanced Microwave Sounding Unit-A (AMSU-A). Performance Verification Report: METSAT (S/N 108) AMSU-A1 Receiver Assemblies, P/N 1356429-1 S/N F05 and P/N 1356409-1 S/N F05

    NASA Technical Reports Server (NTRS)

    Haigh, R.; Krimchansky, S. (Technical Monitor)

    2000-01-01

    This is the Performance Verification Report, METSAT (S/N 108) AMSU-A1 Receiver Assemblies P/N 1356429-1 S/N F05 and P/N 1356409-1 S/N F05, for the Integrated Advanced Microwave Sounding Unit-A (AMSU-A). The ATP for the AMSU-A Receiver Subsystem, AE-26002/6A, is prepared to describe in detail the configuration of the test setups and the procedures of the tests to verify that the receiver subsystem meets the specifications as required either in the AMSU-A Instrument Performance and Operation Specifications, S-480-80, or in AMSU-A Receiver Subsystem Specifications, AE-26608, derived by the Aerojet System Engineering. Test results that verify the conformance to the specifications demonstrate the acceptability of that particular receiver subsystem.

  6. Crop Yield Response to Increasing Biochar Rates

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The benefit or detriment to crop yield from biochar application varies with biochar type/rate, soil, crop, or climate. The objective of this research was to identify yield response of cotton (Gossypium hirsutum L.), corn (Zea mayes L.), and peanut (Arachis hypogaea L.) to hardwood biochar applied at...

  7. Yield potential of pigeon pea cultivars

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Yield potential of twelve vegetable pigeon pea (Cajanus cajun) cultivars was evaluated at two locations in eastern Kenya during 2012 and 2013 cropping years. Pigeon pea pod numbers, seeds per pod, seed mass, grain yield and shelling percentage were quantified in three replicated plots, arranged in a...

  8. Ideotype population exploration: growth, photosynthesis, and yield components at different planting densities in winter oilseed rape (Brassica napus L.).

    PubMed

    Ma, Ni; Yuan, Jinzhan; Li, Ming; Li, Jun; Zhang, Liyan; Liu, Lixin; Naeem, Muhammad Shahbaz; Zhang, Chunlei

    2014-01-01

    Rapeseed is one of the most important edible oil crops in the world and the seed yield has lagged behind the increasing demand driven by population growth. Winter oilseed rape (Brassica napus L.) is widely cultivated with relatively low yield in China, so it is necessary to find the strategies to improve the expression of yield potential. Planting density has great effects on seed yield of crops. Hence, field experiments were conducted in Wuhan in the Yangtze River basin with one conventional variety (Zhongshuang 11, ZS11) and one hybrid variety (Huayouza 9, HYZ9) at five planting densities (27.0×10(4), 37.5×10(4), 48.0×10(4), 58.5×10(4), 69.0×10(4) plants ha(-1)) during 2010-2012 to investigate the yield components. The physiological traits for high-yield and normal-yield populations were measured during 2011-2013. Our results indicated that planting densities of 58.5×10(4) plants ha(-1) in ZS11 and 48.0×10(4) plants ha(-1) in HYZ9 have significantly higher yield compared with the density of 27.0×10(4) plants ha(-1) for both varieties. The ideal silique numbers for ZS11 and HYZ9 were ∼0.9×10(4) (n m(-2)) and ∼1×10(4) (n m(-2)), respectively, and ideal primary branches for ZS11 and HYZ9 were ∼250 (n m(-2)) and ∼300 (n m(-2)), respectively. The highest leaf area index (LAI) and silique wall area index (SAI) was ∼5.0 and 7.0, respectively. Moreover, higher leaf net photosynthetic rate (Pn) and water use efficiency (WUE) were observed in the high-yield populations. A significantly higher level of silique wall photosynthesis and rapid dry matter accumulation were supposed to result in the maximum seed yield. Our results suggest that increasing the planting density within certain range is a feasible approach for higher seed yield in winter rapeseed in China.

  9. Yielding behavior of dense microgel glasses

    NASA Astrophysics Data System (ADS)

    Joshi, R. G.; Tata, B. V. R.; Karthickeyan, D.

    2013-02-01

    We report here the yielding behavior of dense suspensions of stimuli-responsive poly-N-isopropyl acrylamide (PNIPAM) microgel particles studied by performing oscillatory shear measurements. At a volume fraction of φ = 0.6 (labeled as sample S1) the suspension is characterized to be repulsive glass by dynamic light scattering technique and showed one step yielding. Quite interestingly higher volume fraction sample (S2) prepared by osmotically compressing sample S1, showed yielding occurring in two steps. Such one step yielding behavior turning into two step yielding was reported by Pham et al [Europhys. Lett., 75, 624 (2006)] in hard-sphere repulsive colloidal glass when transformed into an attractive glass by inducing depletion attraction. We confirm the repulsive interparticle interaction between PNIPAM microgel particles turning into attractive upon osmotic compression by static light scattering measurements.

  10. Wheat yield dynamics: a structural econometric analysis.

    PubMed

    Sahin, Afsin; Akdi, Yilmaz; Arslan, Fahrettin

    2007-10-15

    In this study we initially have tried to explore the wheat situation in Turkey, which has a small-open economy and in the member countries of European Union (EU). We have observed that increasing the wheat yield is fundamental to obtain comparative advantage among countries by depressing domestic prices. Also the changing structure of supporting schemes in Turkey makes it necessary to increase its wheat yield level. For this purpose, we have used available data to determine the dynamics of wheat yield by Ordinary Least Square Regression methods. In order to find out whether there is a linear relationship among these series we have checked each series whether they are integrated at the same order or not. Consequently, we have pointed out that fertilizer usage and precipitation level are substantial inputs for producing high wheat yield. Furthermore, in respect for our model, fertilizer usage affects wheat yield more than precipitation level.

  11. Extended generation profile - E.B.I.C model application in the case of a PN junction

    NASA Astrophysics Data System (ADS)

    Guermazi, S.; Toureille, A.; Grill, C.; El Jani, B.

    2000-01-01

    We have developed a model for the calculation of the induced current due to an electron beam with an extended generation profile. Added to the absorbed and diffuse electrons in the depth distribution, the generation profile takes into account the lateral diffusion. The analytical expression of the electron beam induced current (EBIC) is obtained by solving the continuity equation in permanent regime by the Green function method. The induced current profile, obtained in the case of a ternary component (Ga{0.7}Al{0.3}As:N^+/Ga{0.7}Al{0.3}As:P) sulfur doped and prepared by organometallic compounds phase vapor epitaxy method, is compared to the theoretical profiles whose analytical expressions are given by Van Roosbroeck and Bresse. The experimental current profile, measured by S.E.M provided us to calculate the diffusion length of the minority carriers: L_p=1 μm in the N region and L_n=1.80 μm in the P region of the ternaire component. The theoretical curve obtained from the proposed model is in good agreement with the experimental one for a surface recombination velocity of 10^6 cm s^{-1}. Our results are found to be consistent compared to those obtained by other experimental techniques using the same samples. Nous avons développé un modèle de calcul du courant induit par un faisceau d'électrons avec un profil de génération élargi. Le profil de génération prend en compte la répartition spatiale de la diffusion et de l'absorption des électrons. L'expression analytique du courant induit (E.B.I.C) est déterminée par résolution de l'équation de continuité en régime permanent par la méthode des fonctions de Green. Le profil de courant induit obtenu dans le cas d'une jonction PN (Ga{0,7}Al{0,3}As:N^+/Ga{0,7}Al{0,3}As:P) dopée par le soufre et préparée par épitaxie à phase vapeur organo-métallique, est comparé au profil de courant théorique dont l'expression analytique est explicitée par Van Roosbroeck et Bresse. Le profil expérimental de

  12. In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient

    NASA Astrophysics Data System (ADS)

    Paszuk, Agnieszka; Dobrich, Anja; Koppka, Christian; Brückner, Sebastian; Duda, Marek; Kleinschmidt, Peter; Supplie, Oliver; Hannappel, Thomas

    2017-04-01

    III-V integration on active Si-bottom cells promises not only high-efficiency multi-junction solar cells but also lower production costs. In situ preparation of an adequate Si p-n junction in metalorganic chemical vapor deposition ambient is challenging, particularly since the final Si surface should be atomically well-ordered to enable low-defect III-V nucleation. Precisely, a single-domain Si(100) surface with double layer steps needs to be prepared in order to suppress antiphase disorder in subsequently grown III-V layer structures on top of the Si p-n junction. We first investigate the formation of a n+-type collector in Si(100) as a result of annealing in tertiarybutylphosphine (TBP) or tertiarybutylarsine (TBAs) ambient. We illustrate how the n-type doping concentrations and their depth profiles depend on the essential preparation parameters, such as precursor partial pressures, exposure and annealing time, as well as reactor pressure. Subsequently, by applying in situ reflectance anisotropy spectroscopy, we find that exposure of Si(100) to TBP or TBAs leads to atomic disorder on the surface. Further, we apply an additional annealing step without precursor supply leading to predominantly (1×2) reconstructed Si(100) surfaces, which are suitable for subsequent low-defect III-V growth.

  13. Fabrication of the carnation-like CCN-CuS p-n heterojunctions with enhanced photocatalytic performance under visible light irradiation

    NASA Astrophysics Data System (ADS)

    Wang, Qizhao; Shi, Yanbiao; Pu, Lili; Ta, Yuting; He, Jijuan; Zhang, Shuling; Zhong, Junbo; Li, Jianzhang; Su, Bitao

    2016-03-01

    Carnation-like CuS nanoflowers were prepared by a mildly hydrothermal method without any surfactants or templates and further evolved into CCN-CuS p-n heterojunctions. And the as-prepared samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), UV-vis absorption spectroscopy, Brunauer-Emmett-Teller (BET), photoluminescence (PL) and the photocurrent response. The results show that the appropriate load content of CCN is conducive to form well-morphology CCN-CuS heterojunctions. And the formation of CCN-CuS p-n heterojunctions is both beneficial to achieve higher charge separation efficiency and promote its photocatalytic performance to RhB dye without the existence of H2O2, which is commonly used as the sources of hydroxyl radicals to assist photocatalytic process. Besides, the as-synthesized 5CCN-CuS NFs show good stability and no obvious inactivation occurred after five degradation cycles runs.

  14. Wire-shaped ultraviolet photodetectors based on a nanostructured NiO/ZnO coaxial p-n heterojunction via thermal oxidation and hydrothermal growth processes.

    PubMed

    Ko, Yeong Hwan; Nagaraju, Goli; Yu, Jae Su

    2015-02-14

    We report the facile fabrication of wire-shaped ultraviolet photodetectors (WUPDs) by employing a nanostructured zinc oxide (ZnO)/nickel oxide (NiO) coaxial p-n heterojunction. The WUPD consists of a ZnO/NiO coaxial Ni wire and a twisted gold (Au) wire where the Ni and Au are used as the anode and cathode, respectively. For the coaxial p-n heterojunction, the NiO nanostructures (NSs) and the ZnO nanorods (NRs) are subsequently formed on the surface of Ni wire via thermal oxidation and hydrothermal growth processes. With an applied bias of -3.5 V, the WUPD exhibits good photoresponsivity of 7.37 A W(-1) and an external quantum efficiency of 28.1% at an incident light wavelength of 325 nm. Under the UV illumination at a wavelength of 365 nm, the dark current and photocurrent are -3.97 × 10(-7) and -8.47 × 10(-6) A, respectively. For enhancing the photocurrent, the WUPD is threaded through a silver (Ag) coated glass tube which acts as a waveguide to concentrate the UV light of 365 nm on the WUPD. As a result, the photocurrent is significantly improved up to -1.56 × 10(-5) A (i.e., 1.84 times) at the reverse bias of -3.5 V.

  15. Composition determination of quaternary GaAsPN layers from single X-ray diffraction measurement of quasi-forbidden (002) reflection

    SciTech Connect

    Tilli, J.-M. Jussila, H.; Huhtio, T.; Sopanen, M.; Yu, K. M.

    2014-05-28

    GaAsPN layers with a thickness of 30 nm were grown on GaP substrates with metalorganic vapor phase epitaxy to study the feasibility of a single X-ray diffraction (XRD) measurement for full composition determination of quaternary layer material. The method is based on the peak intensity of a quasi-forbidden (002) reflection, which is shown to vary with changing arsenic content for GaAsPN. The method works for thin films with a wide range of arsenic contents and shows a clear variation in the reflection intensity as a function of changing layer composition. The obtained thicknesses and compositions of the grown layers are compared with accurate reference values obtained by Rutherford backscattering spectroscopy combined with nuclear reaction analysis measurements. Based on the comparison, the error in the XRD defined material composition becomes larger with increasing nitrogen content and layer thickness. This suggests that the dominating error source is the deteriorated crystal quality due to the nonsubstitutional incorporation of nitrogen into the crystal lattice and strain relaxation. The results reveal that the method overestimates the arsenic and nitrogen content within error margins of about 0.12 and about 0.025, respectively.

  16. Large-area, transparent, and flexible infrared photodetector fabricated using P-N junctions formed by N-doping chemical vapor deposition grown graphene.

    PubMed

    Liu, Nan; Tian, He; Schwartz, Gregor; Tok, Jeffrey B-H; Ren, Tian-Ling; Bao, Zhenan

    2014-07-09

    Graphene is a highly promising material for high speed, broadband, and multicolor photodetection. Because of its lack of bandgap, individually gated P- and N-regions are needed to fabricate photodetectors. Here we report a technique for making a large-area photodetector on the basis of controllable fabrication of graphene P-N junctions. Our selectively doped chemical vapor deposition (CVD) graphene photodetector showed a ∼5% modulation of conductance under global IR irradiation. By comparing devices of various geometries, we identify that both the homogeneous and the P-N junction regions contribute competitively to the photoresponse. Furthermore, we demonstrate that our two-terminal graphene photodetector can be fabricated on both transparent and flexible substrates without the need for complex fabrication processes used in electrically gated three-terminal devices. This represents the first demonstration of a fully transparent and flexible graphene-based IR photodetector that exhibits both good photoresponsivity and high bending capability. This simple approach should facilitate the development of next generation high-performance IR photodetectors.

  17. Extraordinary improvement of gas-sensing performances in SnO2 nanofibers due to creation of local p-n heterojunctions by loading reduced graphene oxide nanosheets.

    PubMed

    Lee, Jae-Hyoung; Katoch, Akash; Choi, Sun-Woo; Kim, Jae-Hun; Kim, Hyoun Woo; Kim, Sang Sub

    2015-02-11

    We propose a novel approach to improve the gas-sensing properties of n-type nanofibers (NFs) that involves creation of local p-n heterojunctions with p-type reduced graphene oxide (RGO) nanosheets (NSs). This work investigates the sensing behaviors of n-SnO2 NFs loaded with p-RGO NSs as a model system. n-SnO2 NFs demonstrated greatly improved gas-sensing performances when loaded with an optimized amount of p-RGO NSs. Loading an optimized amount of RGOs resulted in a 20-fold higher sensor response than that of pristine SnO2 NFs. The sensing mechanism of monolithic SnO2 NFs is based on the joint effects of modulation of the potential barrier at nanograin boundaries and radial modulation of the electron-depletion layer. In addition to the sensing mechanisms described above, enhanced sensing was obtained for p-RGO NS-loaded SnO2 NFs due to creation of local p-n heterojunctions, which not only provided a potential barrier, but also functioned as a local electron absorption reservoir. These mechanisms markedly increased the resistance of SnO2 NFs, and were the origin of intensified resistance modulation during interaction of analyte gases with preadsorbed oxygen species or with the surfaces and grain boundaries of NFs. The approach used in this work can be used to fabricate sensitive gas sensors based on n-type NFs.

  18. In situ Ni-doping during cathodic electrodeposition of hematite for excellent photoelectrochemical performance of nanostructured nickel oxide-hematite p-n junction photoanode

    NASA Astrophysics Data System (ADS)

    Phuan, Yi Wen; Ibrahim, Elyas; Chong, Meng Nan; Zhu, Tao; Lee, Byeong-Kyu; Ocon, Joey D.; Chan, Eng Seng

    2017-01-01

    Nanostructured nickel oxide-hematite (NiO/α-Fe2O3) p-n junction photoanodes synthesized from in situ doping of nickel (Ni) during cathodic electrodeposition of hematite were successfully demonstrated. A postulation model was proposed to explain the fundamental mechanism of Ni2+ ions involved, and the eventual formation of NiO on the subsurface region of hematite that enhanced the potential photoelectrochemical water oxidation process. Through this study, it was found that the measured photocurrent densities of the Ni-doped hematite photoanodes were highly dependent on the concentrations of Ni dopant used. The optimum Ni dopant at 25 M% demonstrated an excellent photoelectrochemical performance of 7-folds enhancement as compared to bare hematite photoanode. This was attributed to the increased electron donor density through the p-n junction and thus lowering the energetic barrier for water oxidation activity at the optimum Ni dopant concentration. Concurrently, the in situ Ni-doping of hematite has also lowered the photogenerated charge carrier transfer resistance as measured using the electrochemical impedance spectroscopy. It is expected that the fundamental understanding gained through this study is helpful for the rational design and construction of highly efficient photoanodes for application in photoelectrochemical process.

  19. Enhanced photocatalytic performances of n-TiO₂ nanotubes by uniform creation of p-n heterojunctions with p-Bi₂O₃ quantum dots.

    PubMed

    Ge, Mingzheng; Cao, Chunyan; Li, Shuhui; Zhang, Songnan; Deng, Shu; Huang, Jianying; Li, Qingsong; Zhang, Keqin; Al-Deyab, Salem S; Lai, Yuekun

    2015-07-21

    An ultrasonication-assisted successive ionic layer adsorption and reaction (SILAR) strategy was developed for uniform deposition of high density p-type Bi2O3 quantum dots on n-type TiO2 nanotube arrays (Bi2O3@TiO2 NTAs), which were constructed by electrochemical anodization in ethylene glycol containing the electrolyte. Compared with pristine TiO2 NTAs, the Bi2O3 quantum dots sensitized TiO2 NTAs exhibited highly efficient photocatalytic degradation of methyl orange (MO). The kinetic constant of Bi2O3@TiO2 NTAs prepared by an ultrasonication-assisted SILAR process of 4 cycles was 1.95 times higher than that of the pristine TiO2 NTA counterpart. The highly efficient photocatalytic activity is attributed to the synergistic effect between the formation of a uniform p-n heterojunction with high-density for enhancing light absorption and facilitating photogenerated electron-hole separation/transfer. The results suggest that Bi2O3@TiO2 p-n heterojunction nanotube arrays are very promising for enhancing the photocatalytic activity and open up a promising strategy for designing and constructing high efficiency heterogeneous semiconductor photocatalysts.

  20. Integrated Advanced Microwave Sounding Unit-A (AMSU-A). Performance Verification Report: AMSU-A1 Antenna Drive Subsystem, PN 1331720-2, S/N 106

    NASA Technical Reports Server (NTRS)

    Luu, D.

    1999-01-01

    This is the Performance Verification Report, AMSU-A1 Antenna Drive Subsystem, P/N 1331720-2, S/N 106, for the Integrated Advanced Microwave Sounding Unit-A (AMSU-A). The antenna drive subsystem of the METSAT AMSU-A1, S/N 106, P/N 1331720-2, completed acceptance testing per A-ES Test Procedure AE-26002/lD. The test included: Scan Motion and Jitter, Pulse Load Bus Peak Current and Rise Time, Resolver Reading and Position Error, Gain/ Phase Margin, and Operational Gain Margin. The drive motors and electronic circuitry were also tested at the component level. The drive motor test includes: Starting Torque Test, Motor Commutation Test, Resolver Operation/ No-Load Speed Test, and Random Vibration. The electronic circuitry was tested at the Circuit Card Assembly (CCA) level of production; each test exercised all circuit functions. The transistor assembly was tested during the W3 cable assembly (1356941-1) test.