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Sample records for polycrystalline 3c-sic thin

  1. Modeling of polycrystalline thin film solar cells

    NASA Astrophysics Data System (ADS)

    Fahrenbruch, Alan L.

    1999-03-01

    This paper describes modeling polycrystalline thin-film solar cells using the program AMPS-1D1 to visualize the relationships between the many variables involved. These simulations are steps toward two dimensional modeling the effects of grain boundaries in polycrystalline cells. Although this paper describes results for the CdS/CdTe cell, the ideas presented here are applicable to copper-indium-gallium selenide (CIGS) cells as well as other types of cells. Results of these one-dimensional simulations are presented: (a) the duplication of experimentally observed cell parameters, (b) the effects of back-contact potential barrier height and its relation to stressing the cell, (c) the effects of the depletion layer width in the CdTe layer on cell parameters, and (d) the effects of CdS layer thickness on the cell parameters. Experience using the software is also described.

  2. Polycrystalline-thin-film thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  3. Progress in polycrystalline thin-film solar cells

    SciTech Connect

    Zweibel, K; Hermann, A; Mitchell, R

    1983-07-01

    Photovoltaic devices based on several polycrystalline thin-film materials have reached near and above 10% sunlight-to-electricity conversion efficiencies. This paper examines the various polycrystalline thin-film PV materials including CuInSe/sub 2/ and CdTe in terms of their material properties, fabrication techniques, problems, and potentials.

  4. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect

    Not Available

    2013-06-01

    This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

  5. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

  6. Polycrystalline silicon conductivity modulated thin film transistors

    NASA Astrophysics Data System (ADS)

    Anish, Kumar K. P.

    1997-09-01

    Polycrystalline silicon (poly-Si) thin-film transistors (TFTs) on glass has received significant attention for use in large area microelectronic applications. These applications include both niche and large volume applications such as printer drivers, image scanners, active-matrix liquid crystal displays (AMLCDs), electro-luminescent displays, plasma assisted displays, etc. Currently, the leading technology for these applications is amorphous-Si (a-Si) TFT. However, as the information content increases, a-Si technology encounters severe challenges due to its inherent low mobility, high parasitic capacitance, low aperture ratio, and non-compatibility to CMOS process. On the other hand, poly-Si technology offers high mobility, low parasitic capacitance, small size, CMOS compatibility, good stability, and uses the infrastructure of silicon science and technology. Thus, a simple low temperature poly-Si technology which allows large area system integration on panel will be in great demand for future high definition displays. However, it was found that poly-Si material properties vary with its method of preparation, its grain size, its surface roughness, and the nature and distribution of the inter-granular and bulk defects. Therefore, extensive studies are needed to optimize the key parameters such as the off-current, on-current, and breakdown voltage of the devices. These parameters can be optimized by means of material preparation as well as innovative device designs. In this thesis, three TFT structures were invented and fabricated using a simple low temperature poly-Si technology. With these novel structures, pixels, pixel drivers, and analog and digital peripheral circuits can all be built on the same glass substrate. This allows the ultimate goal of display systems on glass to be much more closer to reality. First, a high voltage transistor called the Conductivity Modulated Thin Film Transistor (CMTFT) is presented. Using this structure, the fundamental current

  7. Polycrystalline thin film materials and devices

    NASA Astrophysics Data System (ADS)

    Baron, B. N.; Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E.

    1991-11-01

    Results and conclusions of Phase 1 of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe2 and CdTe solar cells. The kinetics of the formation of CuInSe2 by selenization with hydrogen selenide was investigated and a CuInSe2/Cds solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe2 films and a cell efficiency of 7 percent. Detailed investigations of the open circuit voltage of CuInSe2 solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe2 thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe2 is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10 percent can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm(exp 2) are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.

  8. RESEARCH ON THIN FILM POLYCRYSTALLINE SOLAR CELLS.

    DTIC Science & Technology

    Studies of factors affecting the properties of polycrystalline CdTe film grown by the vapor reaction process are discussed and a variety of...molybdenum substrates are compared. No real differences are found. Rough measures of temperature effects and tellurium flow rate on film growth rate are

  9. Improved transport properties of polycrystalline YBCO thin-films

    NASA Astrophysics Data System (ADS)

    Azoulay, J.; Verdyan, A.; Lapsker, I.

    1994-12-01

    Resistive evaporation technique was used to fabricate polycrystalline YBaCuO and YBaNaCuO thin films on MgO substrates. Heat treatment was carried out in a low oxygen partial pressure. Polycrystalline YBCO and Na doped YBCO thin films samples were thus obtained using the same technique and conditions. The critical current density of Na doped YBCO sample was measured to be significantly higher than that of the undoped YBCO one. The results are discussed in terms of the Na contribution to the intragrain conductivity.

  10. Polycrystalline Thin-Film Photovoltaic Technologies: Progress and Technical Issues

    SciTech Connect

    Ullal, H. S.

    2004-08-01

    Polycrystalline thin-film materials based on copper indium diselenide (CuInSe2, CIS) and cadmium telluride (CdTe) are promising thin-film solar cells for various power and specialty applications. Impressive results have been obtained in the past few years for both thin-film copper indium gallium diselenide (CIGS) solar cells and thin-film CdTe solar cells. NCPV/NREL scientists have achieved world-record, total-area efficiencies of 19.3% for a thin-film CIGS solar cell and 16.5% for thin-film CdTe solar cell. A number of technical R&D issues related to CIS and CdTe have been identified. Thin-film power module efficiencies up to 13.4% has been achieved thus far. Tremendous progress has been made in the technology development for module fabrication, and multi-megawatt manufacturing facilities are coming on line with expansion plans in the next few years. Several 40-480 kW polycrystalline thin-film, grid-connected PV arrays have been deployed worldwide. Hot and humid testing is also under way to validate the long-term reliability of these emerging thin-film power products. The U.S. thin-film production (amorphous silicon[a-Si], CIS, CdTe) is expected to exceed 50 MW by the end of 2005.

  11. Dynamical electrophotoconductivity in polycrystalline thin films

    NASA Technical Reports Server (NTRS)

    Kowel, S. T.; Kornreich, P. G.

    1982-01-01

    Polycrystalline cadmium sulfide (CdS) films were deposited on lithium niobate (LiNbO3) substrates by vacuum evaporation and annealed to obtain high photosensitivity. The change in photoconductivity of these films due to the penetration of electric fields associated with elastic waves propagating on their substrates was demonstrated and studied. The relationship between the acoustic electric field and the induced change in film conductivity was found to be a nonlinear one. The fractional change in conductivity is strongly dependent on the light intensity and the film temperature, showing a prominent maximum as a function of these quantities. The largest recorded fractional change in conductivity was about 25% at electric fields of the order of 1,000 volts per centimeter. A phenomological model was developed based on the interaction between the space charge created by the electric field and the electron trapping states in the photoconductor.

  12. Polycrystalline Thin Film Device Degradation Studies

    SciTech Connect

    Albin, D. S.; McMahon, T. J.; Pankow, J. W.; Noufi, R.; Demtsu, S. H.; Davies, A.

    2005-11-01

    Oxygen during vapor CdCl2 (VCC) treatments significantly reduced resistive shunts observed in CdS/CdTe polycrystalline devices using thinner CdS layers during 100 deg C, open-circuit, 1-sun accelerated stress testing. Cu oxidation resulting from the reduction of various trace oxides present in as-grown and VCC treated films is the proposed mechanism by which Cu diffusion, and subsequent shunts are controlled. Graphite paste layers between metallization and CdTe behave like diffusion barriers and similarly benefit device stability. Ni-based contacts form a protective Ni2Te3 intermetallic layer that reduces metal diffusion but degrades performance through increased series resistance.

  13. Flexible polycrystalline thin-film photovoltaics for space applications

    NASA Technical Reports Server (NTRS)

    Armstrong, J. H.; Lanning, B. R.; Misra, M. S.; Kapur, V. K.; Basol, B. M.

    1993-01-01

    Polycrystalline thin-film photovoltaics (PV), such as CIS and CdTe, have received considerable attention recently with respect to space power applications. Their combination of stability, efficiency, and economy from large-scale monolithic-integration of modules can have significant impact on cost and weight of PV arrays for spacecraft and planetary experiments. An added advantage, due to their minimal thickness (approximately 6 microns sans substrate), is the ability to manufacture lightweight, flexible devices (approximately 2000 W/kg) using large-volume manufacturing techniques. The photovoltaic effort at Martin Marietta and ISET is discussed, including large-area, large-volume thin-film deposition techniques such as electrodeposition and rotating cylindrical magnetron sputtering. Progress in the development of flexible polycrystalline thin-film PV is presented, including evaluation of flexible CIS cells. In addition, progress on flexible CdTe cells is presented. Finally, examples of lightweight, flexible arrays and their potential cost and weight impact is discussed.

  14. Hydrogen passivation of polycrystalline silicon thin films

    NASA Astrophysics Data System (ADS)

    Scheller, L.-P.; Weizman, M.; Simon, P.; Fehr, M.; Nickel, N. H.

    2012-09-01

    The influence of post-hydrogenation on the electrical and optical properties of solid phase crystallized polycrystalline silicon (poly-Si) was examined. The passivation of grain-boundary defects was measured as a function of the passivation time. The silicon dangling-bond concentration decreases with increasing passivation time due to the formation of Si-H complexes. In addition, large H-stabilized platelet-like clusters are generated. The influence of H on the electrical properties was investigated using temperature dependent conductivity and Hall-effect measurements. For poly-Si on Corning glass, the dark conductivity decreases upon hydrogenation, while it increases when the samples are fabricated on silicon-nitride covered Borofloat glass. Hall-effect measurements reveal that for poly-Si on Corning glass the hole concentration and the mobility decrease upon post-hydrogenation, while a pronounced increase is observed for poly-Si on silicon-nitride covered Borofloat glass. This indicates the formation of localized states in the band gap, which is supported by sub band-gap absorption measurments. The results are discussed in terms of hydrogen-induced defect passivation and generation mechanisms.

  15. Fabrication of polycrystalline thin films by pulsed laser processing

    DOEpatents

    Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

    1998-02-03

    A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

  16. Fabrication of polycrystalline thin films by pulsed laser processing

    DOEpatents

    Mitlitsky, Fred; Truher, Joel B.; Kaschmitter, James L.; Colella, Nicholas J.

    1998-02-03

    A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

  17. Progress and issues in polycrystalline thin-film PV technologies

    SciTech Connect

    Zweibel, K.; Ullal, H.S.; Roedern, B. von

    1996-05-01

    Substantial progress has occurred in polycrystalline thin-film photovoltaic technologies in the past 18 months. However, the transition to first-time manufacturing is still under way, and technical problems continue. This paper focuses on the promise and the problems of the copper indium diselenide and cadmium telluride technologies, with an emphasis on continued R&D needs for the near-term transition to manufacturing and for next-generation improvements. In addition, it highlights the joint R&D efforts being performed in the U.S. Department of Energy/National Renewable Energy Laboratory Thin-Film Photovoltaic Partnership Program.

  18. Controlled nanostructuration of polycrystalline tungsten thin films

    SciTech Connect

    Girault, B.; Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O.; Sauvage, T.

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  19. Thin film polycrystalline silicon nanowire biosensors.

    PubMed

    Hakim, Mohammad M A; Lombardini, Marta; Sun, Kai; Giustiniano, Francesco; Roach, Peter L; Davies, Donna E; Howarth, Peter H; de Planque, Maurits R R; Morgan, Hywel; Ashburn, Peter

    2012-04-11

    Polysilicon nanowire biosensors have been fabricated using a top-down process and were used to determine the binding constant of two inflammatory biomarkers. A very low cost nanofabrication process was developed, based on simple and mature photolithography, thin film technology, and plasma etching, enabling an easy route to mass manufacture. Antibody-functionalized nanowire sensors were used to detect the proteins interleukin-8 (IL-8) and tumor necrosis factor-alpha (TNF-α) over a wide range of concentrations, demonstrating excellent sensitivity and selectivity, exemplified by a detection sensitivity of 10 fM in the presence of a 100,000-fold excess of a nontarget protein. Nanowire titration curves gave antibody-antigen dissociation constants in good agreement with low-salt enzyme-linked immunosorbent assays (ELISAs). This fabrication process produces high-quality nanowires that are suitable for low-cost mass production, providing a realistic route to the realization of disposable nanoelectronic point-of-care (PoC) devices.

  20. Advances in polycrystalline thin-film photovoltaics for space applications

    SciTech Connect

    Lanning, B.R.; Armstrong, J.H.; Misra, M.S.

    1994-09-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 eV and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not `reactor-specific` and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a `substrate configuration` by physical vapor deposition techniques and CdTe cells/modules are fabricated in a `superstrate configuration` by wet chemical methods.

  1. Advances in polycrystalline thin-film photovoltaics for space applications

    NASA Astrophysics Data System (ADS)

    Lanning, Bruce R.; Armstrong, Joseph H.; Misra, Mohan S.

    1994-09-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical

  2. Advances in polycrystalline thin-film photovoltaics for space applications

    NASA Technical Reports Server (NTRS)

    Lanning, Bruce R.; Armstrong, Joseph H.; Misra, Mohan S.

    1994-01-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical

  3. Anisotropic thermal conductivity of thin polycrystalline oxide samples

    SciTech Connect

    Tiwari, A.; Boussois, K.; Nait-Ali, B.; Smith, D. S.; Blanchart, P.

    2013-11-15

    This paper reports about the development of a modified laser-flash technique and relation to measure the in-plane thermal diffusivity of thin polycrystalline oxide samples. Thermal conductivity is then calculated with the product of diffusivity, specific heat and density. Design and operating features for evaluating in-plane thermal conductivities are described. The technique is advantageous as thin samples are not glued together to measure in-plane thermal conductivities like earlier methods reported in literature. The approach was employed to study anisotropic thermal conductivity in alumina sheet, textured kaolin ceramics and montmorillonite. Since it is rare to find in-plane thermal conductivity values for such anisotropic thin samples in literature, this technique offers a useful variant to existing techniques.

  4. Different spin relaxation mechanisms between epitaxial and polycrystalline Ta thin films

    NASA Astrophysics Data System (ADS)

    Gamou, Hiromu; Ryu, Jeongchun; Kohda, Makoto; Nitta, Junsaku

    2017-02-01

    We demonstrate that spin relaxation mechanisms are different between epitaxial Ta and disordered polycrystalline Ta thin films by determining the relationship between spin relaxation time and diffusion constant. To control the diffusion constant, epitaxial Ta and polycrystalline Ta thin films are prepared by sputtering on different substrates and at different growth temperatures. The spin relaxation time is extracted from the results of weak antilocalization analysis including the superconducting fluctuation effect. The dominant spin relaxation mechanism for polycrystalline Ta thin films is the Elliot–Yafet mechanism, as is expected for centrosymmetric metal films. In contrast, the D’yakonov–Perel’ mechanism plays a role in epitaxial Ta thin films.

  5. Formation of porous grain boundaries in polycrystalline silicon thin films

    NASA Astrophysics Data System (ADS)

    Kageyama, Yasuyuki; Murase, Yoshie; Tsuchiya, Toshiyuki; Funabashi, Hirofumi; Sakata, Jiro

    2002-06-01

    Unique polycrystalline silicon (poly-Si) thin films, which were permeable to a concentrated hydrofluoric acid solution through their porous grain boundaries, were investigated to elucidate the formation mechanism of their microstructure. 0.1-μm-thick permeable poly-Si thin films were made through processes of amorphous silicon film formation by low pressure chemical vapor deposition, successive postannealing for crystallization, and excess phosphorus diffusion by a phosphorus oxichloride predeposition. At the grain boundaries, porous microstructures were formed after the films were cleaned in an SC1 solution (a 1:1:5 mixture of NH4OH:H2O2:H2O at 80 °C for 10 min), whereas segregated soluble precipitates observed by a field emission secondary electron microscope were present before the SC1 cleaning. Auger electron microscope revealed that the surface of the precipitates mainly consist of silicon (˜80 at. %) and oxygen (˜20 at. %). As a result of transmission electron microscope observation, it is concluded that enhancement of silicon atom mobility by the phosphorus doping process induced consequent segregation of the soluble precipitates at the grain boundaries.

  6. High-Efficiency Polycrystalline Thin Film Tandem Solar Cells.

    PubMed

    Kranz, Lukas; Abate, Antonio; Feurer, Thomas; Fu, Fan; Avancini, Enrico; Löckinger, Johannes; Reinhard, Patrick; Zakeeruddin, Shaik M; Grätzel, Michael; Buecheler, Stephan; Tiwari, Ayodhya N

    2015-07-16

    A promising way to enhance the efficiency of CIGS solar cells is by combining them with perovskite solar cells in tandem devices. However, so far, such tandem devices had limited efficiency due to challenges in developing NIR-transparent perovskite top cells, which allow photons with energy below the perovskite band gap to be transmitted to the bottom cell. Here, a process for the fabrication of NIR-transparent perovskite solar cells is presented, which enables power conversion efficiencies up to 12.1% combined with an average sub-band gap transmission of 71% for photons with wavelength between 800 and 1000 nm. The combination of a NIR-transparent perovskite top cell with a CIGS bottom cell enabled a tandem device with 19.5% efficiency, which is the highest reported efficiency for a polycrystalline thin film tandem solar cell. Future developments of perovskite/CIGS tandem devices are discussed and prospects for devices with efficiency toward and above 27% are given.

  7. Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

  8. Fundamentals of polycrystalline thin film materials and devices

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. . Inst. of Energy Conversion)

    1991-01-01

    This report presents the results of a one-year research program on polycrystalline thin-film solar cells. The research was conducted to better understand the limitations and potential of solar cells using CuInSe{sub 2} and CdTe by systematically investigating the fundamental relationships linking material processing, material properties, and device behavior. By selenizing Cu and In layers, we fabricated device-quality CuInSe{sub 2} thin films and demonstrated a CuInSe{sub 2} solar cell with 7% efficiency. We added Ga, to increase the band gap of CuInSe{sub 2} devices to increase the open-circuit voltage to 0.55 V. We fabricated and analyzed Cu(InGa)Se{sub 2}/CuInSe{sub 2} devices to demonstrate the potential for combining the benefits of higher V{sub oc} while retaining the current-generating capacity of CuInSe{sub 2}. We fabricated an innovative superstrate device design with more than 5% efficiency, as well as a bifacial spectral-response technique for determining the electron diffusion length and optical absorption coefficient of CuInSe{sub 2} in an operational cell. The diffusion length was found to be greater than 1 {mu}m. We qualitatively modeled the effect of reducing heat treatments in hydrogen and oxidizing treatments in air on the I-V behavior of CuInSe{sub 2} devices. We also investigated post-deposition heat treatments and chemical processing and used them to fabricate a 9.6%-efficient CdTe/CdS solar cell using physical vapor deposition.

  9. Charge carrier transport in polycrystalline organic thin film based field effect transistors

    NASA Astrophysics Data System (ADS)

    Rani, Varsha; Sharma, Akanksha; Ghosh, Subhasis

    2016-05-01

    The charge carrier transport mechanism in polycrystalline thin film based organic field effect transistors (OFETs) has been explained using two competing models, multiple trapping and releases (MTR) model and percolation model. It has been shown that MTR model is most suitable for explaining charge carrier transport in grainy polycrystalline organic thin films. The energetic distribution of traps determined independently using Mayer-Neldel rule (MNR) is in excellent agreement with the values obtained by MTR model for copper phthalocyanine and pentacene based OFETs.

  10. Faraday effect of polycrystalline bismuth iron garnet thin film prepared by mist chemical vapor deposition method

    NASA Astrophysics Data System (ADS)

    Yao, Situ; Kamakura, Ryosuke; Murai, Shunsuke; Fujita, Koji; Tanaka, Katsuhisa

    2017-01-01

    We have synthesized polycrystalline thin film composed of a single phase of metastable bismuth iron garnet, Bi3Fe5O12, on a fused silica substrate, one of the most widely utilized substrates in the solid-state electronics, by using mist chemical vapor deposition (mist CVD) method. The phase purity and stoichiometry are confirmed by X-ray diffraction and Rutherford backscattering spectrometry. The resultant thin film shows a small surface roughness of 3.251 nm. The saturation magnetization at room temperature is 1200 G, and the Faraday rotation angle at 633 nm reaches -5.2 deg/μm. Both the magnetization and the Faraday rotation angles are somewhat higher than those of polycrystalline BIG thin films prepared by other methods.

  11. Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

    SciTech Connect

    Do, Woori; Jin, Won-Beom; Choi, Jungwan; Bae, Seung-Muk; Kim, Hyoung-June; Kim, Byung-Kuk; Park, Seungho; Hwang, Jin-Ha

    2014-10-15

    Highlights: • Intensified visible light irradiation was generated via a high-powered Xe arc lamp. • The disordered Si atomic structure absorbs the intensified visible light. • The rapid heating activates electrically boron-implanted Si thin films. • Flash lamp heating is applicable to low temperature polycrystalline Si thin films. - Abstract: Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in the electrical activation of boron-implanted Si thin films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films.

  12. Superconductor—Insulator Transitions in Pure Polycrystalline Nb Thin Films

    NASA Astrophysics Data System (ADS)

    Couedo, F.; Crauste, O.; Bergé, L.; Dolgorouky, Y.; Marrache-Kikuchi, C.; Dumoulin, L.

    2012-12-01

    We report on a study of the transport properties of Nb thin films. By varying the thickness of the films from 263 Å to 25 Å, we observed a depression of the superconductivity. Magnetic field was also applied up to 6 T, inducing the disappearance of the superconductivity and the onset of an insulating behavior. The results were compared to those we have already obtained on a highly disordered system, a-NbxSi1-x, to understand whether the same mechanisms for the disappearance of the superconductivity could be at play in pure metallic thin films and in highly disordered systems.

  13. Properties of boron-doped thin films of polycrystalline silicon

    SciTech Connect

    Merabet, Souad

    2013-12-16

    The properties of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped heavily in situ boron-doped with concentration level of around 2×10{sup 20}cm{sup −3} has been studied. Their properties are analyzed using electrical and structural characterization means by four points probe resistivity measurements and X-ray diffraction spectra. The thermal-oxidation process are performed on sub-micron layers of 200nm/c-Si and 200nm/SiO{sub 2} deposited at temperatures T{sub d} ranged between 520°C and 605°C and thermally-oxidized in dry oxygen ambient at 945°C. Compared to the as-grown resistivity with silicon wafers is known to be in the following sequence <ρ{sub 200nm/c−Si}> < <ρ{sub 200nm/SiO2}> and <ρ{sub 520}> < <ρ{sub 605}>. The measure X-ray spectra is shown, that the Bragg peaks are marked according to the crystal orientation in the film deposited on bare substrates (poly/c-Si), for the second series of films deposited on bare oxidized substrates (poly/SiO{sub 2}) are clearly different.

  14. Polycrystalline thin film materials and devices. Final subcontract report, 16 January 1990--15 January 1993

    SciTech Connect

    Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.; Yokimcus, T.A.

    1993-08-01

    This report describes results and conclusions of the final phase (III) of a three-year research program on polycrystalline thin-film heterojunction solar cells. The research consisted of the investigation of the relationships between processing, materials properties, and device performance. This relationship was quantified by device modeling and analysis. The analysis of thin-film polycrystalline heterojunction solar cells explains how minority-carrier recombination at the metallurgical interface and at grain boundaries can be greatly reduced by the proper doping of the window and absorber layers. Additional analysis and measurements show that the present solar cells are limited by the magnitude of the diode current, which appears to be caused by recombination in the space charge region. Developing an efficient commercial-scale process for fabricating large-area polycrystalline, thin-film solar cells from a research process requires a detailed understanding of the individual steps in making the solar cell, and their relationship to device performance and reliability. The complexities involved in characterizing a process are demonstrated with results from our research program on CuInSe{sub 2}, and CdTe processes.

  15. Simulation of electrical conduction in thin polycrystalline metallic films: Impact of microstructure

    SciTech Connect

    Rickman, J. M.; Barmak, K.

    2013-10-07

    We examine the impact of microstructural features on the electrical conductivity of a thin metallic film using Monte Carlo simulation. In particular, we obtain the dependence of the conductivity (in the absence of surface scattering) on average grain size and electron scattering mechanisms, the latter parametrized by a transmission coefficient, for a model polycrystal generated by a Voronoi tessellation. We find that the conductivity can be described in limiting cases in terms of either a simplified hopping model or a trapping model. Finally, we compare our results with the Mayadas-Shatzkes model of grain-boundary scattering and with experimental resistivity measurements for polycrystalline copper thin films.

  16. Polycrystalline Mg{sub 2}Si thin films: A theoretical investigation of their electronic transport properties

    SciTech Connect

    Balout, H.; Boulet, P.; Record, M.-C.

    2015-05-15

    The electronic structures and thermoelectric properties of a polycrystalline Mg{sub 2}Si thin film have been investigated by first-principle density-functional theory (DFT) and Boltzmann transport theory calculations within the constant-relaxation time approximation. The polycrystalline thin film has been simulated by assembling three types of slabs each having the orientation (001), (110) or (111) with a thickness of about 18 Å. The effect of applying the relaxation procedure to the thin film induces disorder in the structure that has been ascertained by calculating radial distribution functions. For the calculations of the thermoelectric properties, the energy gap has been fixed at the experimental value of 0.74 eV. The thermoelectric properties, namely the Seebeck coefficient, the electrical conductivity and the power factor, have been determined at three temperatures of 350 K, 600 K and 900 K with respect to both the energy levels and the p-type and n-type doping levels. The best Seebeck coefficient is obtained at 350 K: the S{sub yy} component of the tensor amounts to about ±1000 μV K{sup −1}, depending on the type of charge carriers. However, the electrical conductivity is much too small which results in low values of the figure of merit ZT. Structure–property relationship correlations based on directional radial distribution functions allow us to tentatively draw some explanations regarding the anisotropy of the electrical conductivity. Finally, the low ZT values obtained for the polycrystalline Mg{sub 2}Si thin film are paralleled with those recently reported in the literature for bulk chalcogenide glasses. - Graphical abstract: Structure of the polycrystalline thin film of Mg{sub 2}Si. - Author-Highlights: • Polycrystalline Mg{sub 2}Si film has been modelled by DFT approach. • Thermoelectric properties have been evaluated by semi-classical Boltzmann theory. • The structure was found to be slightly disordered after relaxation. • The highest

  17. Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

    SciTech Connect

    Antesberger, T.; Wassner, T. A.; Jaeger, C.; Algasinger, M.; Kashani, M.; Scholz, M.; Matich, S.; Stutzmann, M.

    2013-05-27

    Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2 Multiplication-Sign 10{sup 17} cm{sup -3} and 3 Multiplication-Sign 10{sup 20} cm{sup -3} for phosphorus and 4 Multiplication-Sign 10{sup 18} cm{sup -3} to 3 Multiplication-Sign 10{sup 19} cm{sup -3} for boron-doped layers, with carrier mobilities up to 90 cm{sup 2}/V s.

  18. The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

    NASA Technical Reports Server (NTRS)

    Brown, Ari David; Barrentine, Emily M.; Moseley, Samuel H.; Noroozian, Omid; Stevenson, Thomas

    2016-01-01

    Polycrystalline Nb thin films are extensively used for microwave kinetic inductance detectors (MKIDs) and superconducting transmission line applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the X-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

  19. High photocurrent polycrystalline thin-film CdS/CuInSe2 solar cell

    NASA Astrophysics Data System (ADS)

    Mickelsen, R. A.; Chen, W. S.

    1980-03-01

    A polycrystalline thin-film CdS/CuInSe2 heterojunction solar cell with an efficiency of 5.7% has been prepared using a simultaneous elemental evaporation technique to deposit the CuInSe2 film. The cell's short-circuit current of 31 mA/sq cm under 100 mW/sq cm is the highest ever reported for a 1-sq-cm cell. Heat treatments have been found to improve cell efficiency and to also change the cell I-V and C-V characteristics.

  20. Magnetoresistance in polycrystalline and epitaxial Fe1-xCoxSi thin films

    NASA Astrophysics Data System (ADS)

    Porter, N. A.; Creeth, G. L.; Marrows, C. H.

    2012-08-01

    Thin films of Fe1-xCoxSi were grown using molecular beam epitaxy on Si(111). These 20-nm-thick films, with compositions x=0 or 0.5, were produced by two methods: the first produced large (111)-textured crystallites of the B20 phase; the second produced phase-pure B20 (111) epilayers. The lattice mismatch with the substrate causes biaxial tensile strain in the layers, greater in the epilayers, that distorts the (111)-oriented material to a rhombohedral form. Magnetotransport measurements show that a combination of additional scattering arising from crystal grain boundaries and strain-free polycrystalline films results in a higher resistivity than for the epitaxial films. Magnetometry for x=0.5 suggests an increase in the ordering temperature in strained films relative to the polycrystalline films of 15±4 K. Moreover, the characteristic linear magnetoresistance, typical of bulk single-crystal material of this composition, is retained in the polycrystalline film but reduced in the epitaxial film. While the bulk properties of these materials are reproduced qualitatively, there are small quantitative modifications, due to the strain, to properties such as band gap, Curie temperature, and magnetoresistance.

  1. Optical and electrical properties of polycrystalline and amorphous Al-Ti thin films

    NASA Astrophysics Data System (ADS)

    Canulescu, S.; Borca, C. N.; Rechendorff, K.; Davidsdóttir, S.; Pagh Almtoft, K.; Nielsen, L. P.; Schou, J.

    2016-04-01

    The structural, optical, and transport properties of sputter-deposited Al-Ti thin films have been investigated as a function of Ti alloying with a concentration ranging from 2% to 46%. The optical reflectivity of Al-Ti films at visible and near-infrared wavelengths decreases with increasing Ti content. X-ray absorption fine structure measurements reveal that the atomic ordering around Ti atoms increases with increasing Ti content up to 20% and then decreases as a result of a transition from a polycrystalline to amorphous structure. The transport properties of the Al-Ti films are influenced by electron scattering at the grain boundaries in the case of polycrystalline films and static defects, such as anti-site effects and vacancies in the case of the amorphous alloys. The combination of Ti having a real refractive index (n) comparable with the extinction coefficient (k) and Al with n much smaller than k allows us to explore the parameter space for the free-electron behavior in transition metal-Al alloys. The free electron model, applied for the polycrystalline Al-Ti films with Ti content up to 20%, leads to an optical reflectance at near infrared wavelengths that scales linearly with the square root of the electrical resistivity.

  2. Impact of universal mobility law on polycrystalline organic thin-film transistors

    NASA Astrophysics Data System (ADS)

    Raja, Munira; Donaghy, David; Myers, Robert; Eccleston, Bill

    2012-10-01

    We have developed novel analytical models for polycrystalline organic thin-film transistor (OTFT) by employing new concepts on the charge carrier injection to polysilicon thin-films. The models, also incorporate the effect of contact resistance associated with the poor ohmic nature of the contacts. The drain current equations of the OTFT, both in the quasi-diffusion and quasi-drift regimes, predict temperature dependencies on essential material and device parameters. Interestingly, under the drift regime, the polycrystalline OTFT model reveals similar power dependencies on the applied voltages, to those of purely disordered model developed by utilizing the universal mobility law (UML). Such similarities are not thought to be coincidental since the effect of gate voltage on surface potential is influenced by the Fermi level pinning in the grain boundary. Nonetheless, the best fits on the data of 6,13-bis(tri-isopropylsilylethynyl) OTFTs are attained with the proposed polycrystalline rather than the disordered model, particularly at low gate voltages where the diffusive component is dominant. Moreover, in order to understand the effect of grain boundaries, we devise a relationship for the dependency of the effective mobility on carrier concentration, assuming a crystalline region to be in direct contact with a disordered region. Interestingly, we find a similar dependency as the UML in purely disordered materials, which further signifies the conduction to be limited by the grain boundaries. Subsequently, an analytical model for the variation of the effective mobility with gate voltage is established. Such models are vital in assisting the development of more accurate designs of the novel organic circuits.

  3. Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

    NASA Astrophysics Data System (ADS)

    Mitoma, Nobuhiko; Da, Bo; Yoshikawa, Hideki; Nabatame, Toshihide; Takahashi, Makoto; Ito, Kazuhiro; Kizu, Takio; Fujiwara, Akihiko; Tsukagoshi, Kazuhito

    2016-11-01

    The enhancement in electrical conductivity and optical transparency induced by a phase transition from amorphous to polycrystalline in lightly silicon-doped indium oxide (InSiO) thin films is studied. The phase transition caused by simple thermal annealing transforms the InSiO thin films from semiconductors to conductors. Silicon atoms form SiO4 tetrahedra in InSiO, which enhances the overlap of In 5s orbitals as a result of the distortion of InO6 octahedral networks. Desorption of weakly bonded oxygen releases electrons from deep subgap states and enhances the electrical conductivity and optical transparency of the films. Optical absorption and X-ray photoelectron spectroscopy measurements reveal that the phase transition causes a Fermi energy shift of ˜0.2 eV.

  4. Suppressing light reflection from polycrystalline silicon thin films through surface texturing and silver nanostructures

    SciTech Connect

    Akhter, Perveen; Huang, Mengbing Kadakia, Nirag; Spratt, William; Malladi, Girish; Bakhru, Hassarum

    2014-09-21

    This work demonstrates a novel method combining ion implantation and silver nanostructures for suppressing light reflection from polycrystalline silicon thin films. Samples were implanted with 20-keV hydrogen ions to a dose of 10¹⁷/cm², and some of them received an additional argon ion implant to a dose of 5×10¹⁵ /cm² at an energy between 30 and 300 keV. Compared to the case with a single H implant, the processing involved both H and Ar implants and post-implantation annealing has created a much higher degree of surface texturing, leading to a more dramatic reduction of light reflection from polycrystalline Si films over a broadband range between 300 and 1200 nm, e.g., optical reflection from the air/Si interface in the AM1.5 sunlight condition decreasing from ~30% with an untextured surface to below 5% for a highly textured surface after post-implantation annealing at 1000°C. Formation of Ag nanostructures on these ion beam processed surfaces further reduces light reflection, and surface texturing is expected to have the benefit of diminishing light absorption losses within large-size (>100 nm) Ag nanoparticles, yielding an increased light trapping efficiency within Si as opposed to the case with Ag nanostructures on a smooth surface. A discussion of the effects of surface textures and Ag nanoparticles on light trapping within Si thin films is also presented with the aid of computer simulations.

  5. Compressive intrinsic stress originates in the grain boundaries of dense refractory polycrystalline thin films

    SciTech Connect

    Magnfält, D. Sarakinos, K.; Fillon, A.; Abadias, G.; Boyd, R. D.; Helmersson, U.

    2016-02-07

    Intrinsic stresses in vapor deposited thin films have been a topic of considerable scientific and technological interest owing to their importance for functionality and performance of thin film devices. The origin of compressive stresses typically observed during deposition of polycrystalline metal films at conditions that result in high atomic mobility has been under debate in the literature in the course of the past decades. In this study, we contribute towards resolving this debate by investigating the grain size dependence of compressive stress magnitude in dense polycrystalline Mo films grown by magnetron sputtering. Although Mo is a refractory metal and hence exhibits an intrinsically low mobility, low energy ion bombardment is used during growth to enhance atomic mobility and densify the grain boundaries. Concurrently, the lateral grain size is controlled by using appropriate seed layers on which Mo films are grown epitaxially. The combination of in situ stress monitoring with ex situ microstructural characterization reveals a strong, seemingly linear, increase of the compressive stress magnitude on the inverse grain size and thus provides evidence that compressive stress is generated in the grain boundaries of the film. These results are consistent with models suggesting that compressive stresses in metallic films deposited at high homologous temperatures are generated by atom incorporation into and densification of grain boundaries. However, the underlying mechanisms for grain boundary densification might be different from those in the present study where atomic mobility is intrinsically low.

  6. Compressive intrinsic stress originates in the grain boundaries of dense refractory polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Magnfält, D.; Fillon, A.; Boyd, R. D.; Helmersson, U.; Sarakinos, K.; Abadias, G.

    2016-02-01

    Intrinsic stresses in vapor deposited thin films have been a topic of considerable scientific and technological interest owing to their importance for functionality and performance of thin film devices. The origin of compressive stresses typically observed during deposition of polycrystalline metal films at conditions that result in high atomic mobility has been under debate in the literature in the course of the past decades. In this study, we contribute towards resolving this debate by investigating the grain size dependence of compressive stress magnitude in dense polycrystalline Mo films grown by magnetron sputtering. Although Mo is a refractory metal and hence exhibits an intrinsically low mobility, low energy ion bombardment is used during growth to enhance atomic mobility and densify the grain boundaries. Concurrently, the lateral grain size is controlled by using appropriate seed layers on which Mo films are grown epitaxially. The combination of in situ stress monitoring with ex situ microstructural characterization reveals a strong, seemingly linear, increase of the compressive stress magnitude on the inverse grain size and thus provides evidence that compressive stress is generated in the grain boundaries of the film. These results are consistent with models suggesting that compressive stresses in metallic films deposited at high homologous temperatures are generated by atom incorporation into and densification of grain boundaries. However, the underlying mechanisms for grain boundary densification might be different from those in the present study where atomic mobility is intrinsically low.

  7. Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    1997-03-01

    Polycrystalline-thin-film thermophotovoltaic (TPV) cells have excellent potential for reducing the cost of TPV generators so as to address the hitherto inaccessible and highly competitive markets such as self-powered gas-fired residential warm air furnaces and energy-efficient electric cars, etc. Recent progress in polycrystalline-thin-film solar cells have made it possible to satisfy the diffusion length and intrinsic junction rectification criteria for TPV cells operating at high fluences. Continuous ranges of direct bandgaps of the ternary and pseudoternary compounds such as Hg1-xCdxTe, Pb1-xCdxTe, Hg1-xZnxTe, and Pb1-xZnxS cover the region of interest of 0.50-0.75 eV for efficient TPV conversion. Other ternary and pseudoternary compounds which show direct bandgaps in most of or all of the 0.50-0.75 eV range are Pb1-xZnxTe, Sn1-xCd2xTe2, Pb1-xCdxSe, Pb1-xZnxSe, and Pb1-xCdxS. Hg1-xCdxTe (with x~0.21) has been studied extensively for infrared detectors. PbTe and Pb1-xSnxTe have also been studied for infrared detectors. Not much work has been carried out on Hg1-xZnxTe thin films. Hg1-xCdxTe and Pb1-xCdxTe alloys cover a wide range of cut-off wavelengths from the far infrared to the near visible. Acceptors and donors are introduced in these materials by excess non-metal (Te) and excess metal (Hg and Pb) respectively. Extrinsic acceptor impurities are Cu, Au, and As while and In and Al are donor impurities. Hg1-xCdxTe thin films have been deposited by isothermal vapor-phase epitaxy (VPE), liquid phase epitaxy (LPE), hot-wall metalorganic chemical vapor deposition (MOCVD), electrodeposition, sputtering, molecular beam epitaxy (MBE), laser-assisted evaporation, and vacuum evaporation with or without hot-wall enclosure. The challenge in the preparation of Hg1-xCdxTe is to provide excess mercury incidence rate, to optimize the deposition parameters for enhanced mercury incorporation, and to achieve the requisite stoichiometry, grain size, and doping. MBE and MOCVD

  8. Thin film polycrystalline silicon: Promise and problems in displays and solar cells

    SciTech Connect

    Fonash, S.J.

    1995-08-01

    Thin film polycrystalline Si (poly-Si) with its carrier mobilities, potentially good stability, low intragrain defect density, compatibility with silicon processing, and ease of doping activation is an interesting material for {open_quotes}macroelectronics{close_quotes} applications such as TFTs for displays and solar cells. The poly-Si films needed for these applications can be ultra-thin-in the 500{Angstrom} to 1000{Angstrom} thickness range for flat panel display TFTs and in the 4{mu}m to 10{mu}m thickness range for solar cells. Because the films needed for these microelectronics applications can be so thin, an effective approach to producing the films is that of crystallizing a-Si precursor material. Unlike cast materials, poly-Si films made this way can be produced using low temperature processing. Unlike deposited poly-Si films, these crystallized poly-Si films can have grain widths that are much larger than the film thickness and almost atomically smooth surfaces. This thin film poly-Si crystallized from a-Si precursor films, and its promise and problems for TFTs and solar cells, is the focus of this discussion.

  9. Activation of ion-implanted polycrystalline silicon thin films prepared on glass substrates

    SciTech Connect

    So, Byoung-Soo; Bae, Seung-Muk; You, Yil-Hwan; Kim, Young-Hwan; Hwang, Jin-Ha

    2012-10-15

    Phosphorous-implanted polycrystalline Si thin films were subjected to thermal annealing between 300 °C and 650 °C. The thermal activation was monitored electrically and structurally using Hall measurements, Raman spectroscopy, UV–visible spectrophotometry, and transmission electron microscopy. Charge transport information was correlated to the corresponding structural evolution in thermal activation. Phosphorous-implanted activation is divided into short-range ordering at low temperatures and long-range ordering at high temperatures, with the boundary between low and high temperatures set at 425 °C. Short-range ordering allows for significant increase in electronic concentration through substitution of P for Si. Higher temperatures are attributed to long-range ordering, thereby increasing electronic mobility.

  10. Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Sreenivas Puli, Venkata; Kumar Pradhan, Dhiren; Gollapudi, Sreenivasulu; Coondoo, Indrani; Panwar, Neeraj; Adireddy, Shiva; Chrisey, Douglas B.; Katiyar, Ram S.

    2014-11-01

    Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO3 (BFO) thin films have been deposited on Pt/TiO2/SiO2/Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d33) ~94 pm/V at 0.6 MV/cm. High dielectric constant ~900 and low dielectric loss ~0.25 were observed at room temperature. M-H loops have shown relatively high saturation magnetization ~35 emu/cm3 at a maximum field of H ~20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films.

  11. Broadening of optical transitions in polycrystalline CdS and CdTe thin films

    SciTech Connect

    Li Jian; Chen Jie; Collins, R. W.

    2010-11-01

    The dielectric functions {epsilon} of polycrystalline CdS and CdTe thin films sputter deposited onto Si wafers were measured from 0.75 to 6.5 eV by in situ spectroscopic ellipsometry. Differences in {epsilon} due to processing variations are well understood using an excited carrier scattering model. For each sample, a carrier mean free path {lambda} is defined that is found to be inversely proportional to the broadening of each of the band structure critical points (CPs) deduced from {epsilon}. The rate at which broadening occurs with {lambda}{sup -1} is different for each CP, enabling a carrier group speed {upsilon}{sub g} to be identified for the CP. With the database for {upsilon}{sub g}, {epsilon} can be analyzed to evaluate the quality of materials used in CdS/CdTe photovoltaic heterojunctions.

  12. Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby

    DOEpatents

    Wu, Xuanzhi; Sheldon, Peter

    2000-01-01

    A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

  13. Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

    SciTech Connect

    Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  14. The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

    NASA Technical Reports Server (NTRS)

    Brown, Ari David; Barrentine, Emily M.; Moseley, Samuel H.; Noroozian, Omid; Stevenson, Thomas

    2011-01-01

    Polycrystalline superconducting Nb thin films are extensively used for submillimeter and millimeter transmission line applications and, less commonly, used in microwave kinetic inductance detector (MKID) applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the x-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

  15. Metastable electrical characteristics of polycrystalline thin-film photovoltaic modules upon exposure and stabilization

    NASA Astrophysics Data System (ADS)

    Deline, Chris A.; del Cueto, Joseph A.; Albin, David S.; Rummel, Steve R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65°C exposed in the dark under forward bias at 65°C and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  16. GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE.

    PubMed

    Ikejiri, Keitaro; Ishizaka, Fumiya; Tomioka, Katsuhiro; Fukui, Takashi

    2013-03-22

    The growth mechanism of GaAs nanowires (NWs) grown on polycrystalline silicon (poly-Si) thin films using selective-area metalorganic vapor-phase epitaxy was investigated. Wire structures were selectively grown in the mask openings on a poly-Si substrate. The appearance ratio of wire structures strongly depended on the growth conditions and deposition temperature of the poly-Si substrate. Evaluation of the grown shapes and growth characteristics revealed that GaAs NWs grown on a poly-Si substrate have the same growth mechanism as conventional GaAs NWs grown on a single-crystalline GaAs or Si substrate. Experiments showed that the wire structure yield can be improved by increasing the Si grain size and/or increasing the Si deposition temperature. The growth model proposed for understanding NW growth on poly-Si is based on the mask opening size, the Si grain size, and the growth conditions. The ability to control the growth mode is promising for the formation of NWs with complex structures on poly-Si thin layers.

  17. Designing novel thin film polycrystalline solar cells for high efficiency: sandwich CIGS and heterojunction perovskite

    NASA Astrophysics Data System (ADS)

    Wang, Tianyue; Chen, Jiewei; Wu, Gaoxiang; Song, Dandan; Li, Meicheng

    2017-01-01

    Heterojunction and sandwich architectures are two new-type structures with great potential for solar cells. Specifically, the heterojunction structure possesses the advantages of efficient charge separation but suffers from band offset and large interface recombination; the sandwich configuration is favorable for transferring carriers but requires complex fabrication process. Here, we have designed two thin-film polycrystalline solar cells with novel structures: sandwich CIGS and heterojunction perovskite, referring to the advantages of the architectures of sandwich perovskite (standard) and heterojunction CIGS (standard) solar cells, respectively. A reliable simulation software wxAMPS is used to investigate their inherent characteristics with variation of the thickness and doping density of absorber layer. The results reveal that sandwich CIGS solar cell is able to exhibit an optimized efficiency of 20.7%, which is much higher than the standard heterojunction CIGS structure (18.48%). The heterojunction perovskite solar cell can be more efficient employing thick and doped perovskite films (16.9%) than these typically utilizing thin and weak-doping/intrinsic perovskite films (9.6%). This concept of structure modulation proves to be useful and can be applicable for other solar cells. Project supported by the National High-Tech R&D Program of China (No. 2015AA034601), the National Natural Science Foundation of China (Nos. 91333122, 61204064, 51202067, 51372082, 51402106, 11504107), the Ph.D. Programs Foundation of Ministry of Education of China (Nos. 20120036120006, 20130036110012), the Par-Eu Scholars Program, and the Fundamental Research Funds for the Central Universities.

  18. Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films

    SciTech Connect

    Kumar, Avishek E-mail: dalapatig@imre.a-star.edu.sg; Law, Felix; Widenborg, Per I.; Dalapati, Goutam K. E-mail: dalapatig@imre.a-star.edu.sg; Subramanian, Gomathy S.; Tan, Hui R.; Aberle, Armin G.

    2014-11-01

    n-type polycrystalline silicon (poly-Si) films with very large grains, exceeding 30 μm in width, and with high Hall mobility of about 71.5 cm{sup 2}/V s are successfully prepared by the solid-phase crystallization technique on glass through the control of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The effect of this gas flow ratio on the electronic and structural quality of the n-type poly-Si thin film is systematically investigated using Hall effect measurements, Raman microscopy, and electron backscatter diffraction (EBSD), respectively. The poly-Si grains are found to be randomly oriented, whereby the average area weighted grain size is found to increase from 4.3 to 18 μm with increase of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The stress in the poly-Si thin films is found to increase above 900 MPa when the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio is increased from 0.025 to 0.45. Finally, high-resolution transmission electron microscopy, high angle annular dark field-scanning tunneling microscopy, and EBSD are used to identify the defects and dislocations caused by the stress in the fabricated poly-Si films.

  19. Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Titova, Lyubov V.; Cocker, Tyler L.; Xu, Sijia; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Hegmann, Frank A.

    2016-10-01

    We have used time-resolved terahertz spectroscopy to study microscopic photoconductivity and ultrafast photoexcited carrier dynamics in thin, pure, non-hydrogenated silicon films grown by molecular beam epitaxy on quartz substrates at temperatures ranging from 335 °C to 572 °C. By controlling the growth temperature, thin silicon films ranging from completely amorphous to polycrystalline with minimal amorphous phase can be achieved. Film morphology, in turn, determines its photoconductive properties: in the amorphous phase, carriers are trapped in bandtail states on sub-picosecond time scales, while the carriers excited in crystalline grains remain free for tens of picoseconds. We also find that in polycrystalline silicon the photoexcited carrier mobility is carrier-density-dependent, with higher carrier densities mitigating the effects of grain boundaries on inter-grain transport. In a film grown at the highest temperature of 572 °C, the morphology changes along the growth direction from polycrystalline with needles of single crystals in the bulk of the film to small crystallites interspersed with amorphous silicon at the top of the film. Depth profiling using different excitation wavelengths shows corresponding differences in the photoconductivity: the photoexcited carrier lifetime and mobility are higher in the first 100-150 nm from the substrate, suggesting that thinner, low-temperature grown polycrystalline silicon films are preferable for photovoltaic applications.

  20. Synthesis and characterization of polycrystalline semiconductor Caesium-Tin tri-Iodide thin-films

    NASA Astrophysics Data System (ADS)

    Chen, Zhuo

    This thesis deals with a virtually unexplored semiconductor material CsSnI3 from material synthesis, structural, optical, and electrical characterization to the fabrication and validation of CsSnI3 thin-film solar cells. We started with synthesizing CsSnI3 thin films based on CsI and SnCl2 (or SnI2) by using an apparatus which consists of e-beam and thermal evaporators. The quality of polycrystalline CsSnI3 thin-films were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). Experimental data on XRD and electron diffraction patterns taking from the synthesized thin-films match very well to the theoretically calculated ones based the first principles calculations, confirming that the synthesized CsSnI3 thin-films have an orthorhombic crystal structure. With the well-defined crystal structure, we theoretically studied the electronic band structure of CsSnI3. Extensive optical characterizations of CsSnI3 thin-films were then carried out revealing many extraordinary properties such as 1) direct band gap energy of 1.32 eV at 300 K with its abnormal temperature dependence, 2) extremely high photoluminescence quantum yield, 3) large exciton binding energy, and 4) strong two-phonon assisted excitonic absorption near band edge. These properties are interpreted in terms of the unique electronic and structural properties of CsSnI3. The value of 1.3 eV for the energy band gap of CsSnI3 suggests a unique application of CsSnI3 thin-films on solar cells. This is because this value is right in the small range of the optimal band gaps for the Shockley-Queisser maximum efficiency limit of a single-junction solar cell. A prototype Schottky solar cell was designed, fabricated, and validated. The measured power conversion efficiency (PCE) is 0.9 % which is presently limited by the series and shunt resistance. The improvement strategy on PCE is given at the end of my thesis. In order to make the CsSnI3 thin-film solar cells

  1. Recovery Act : Near-Single-Crystalline Photovoltaic Thin Films on Polycrystalline, Flexible Substrates

    SciTech Connect

    Venkat Selvamanickam; Alex Freundlich

    2010-11-29

    III-V photovoltaics have exhibited efficiencies above 40%, but have found only a limited use because of the high cost of single crystal substrates. At the other end of the spectrum, polycrystalline and amorphous thin film solar cells offer the advantage of low-cost fabrication, but have not yielded high efficiencies. Our program is based on single-crystalline-like thin film photovoltaics on polycrystalline substrates using biaxially-textured templates made by Ion Beam-Assisted Deposition (IBAD). MgO templates made by IBAD on flexible metal substrate have been successfully used for epitaxial growth of germanium films. In spite of a 4.5% lattice mismatch, heteroepitaxial growth of Ge was achieved on CeO2 that was grown on IBAD MgO template. Room temperature optical bandgap of the Ge films was identified at 0.67 eV indicating minimal residual strain. Refraction index and extinction coefficient values of the Ge films were found to match well with that measured from a reference Ge single crystal. GaAs has been successfully grown epitaxially on Ge on metal substrate by molecular beam epitaxy. RHEED patterns indicate self annihilation of antiphase boundaries and the growth of a single domain GaAs. The GaAs is found to exhibit strong photoluminescence signal and, an existence of a relatively narrow (FWHM~20 meV) band-edge excitons measured in this film indicates a good optoelectronic quality of deposited GaAs. While excellent epitaxial growth has been achieved in GaAs on flexible metal substrates, the defect density of the films as measured by High Resolution X-ray Diffraction and etch pit experiments showed a high value of 5 * 10^8 per cm^2. Cross sectional transmission electron microscopy of the multilayer architecture showed concentration of threading dislocations near the germanium-ceria interface. The defect density was found decrease as the Ge films were made thicker. The defects appear to originate from the MgO layer presumably because of large lattice mismatches

  2. Local impedance imaging of boron-doped polycrystalline diamond thin films

    SciTech Connect

    Zieliński, A.; Ryl, J.; Burczyk, L.; Darowicki, K.

    2014-09-29

    Local impedance imaging (LII) was used to visualise surficial deviations of AC impedances in polycrystalline boron-doped diamond (BDD). The BDD thin film electrodes were deposited onto the highly doped silicon substrates via microwave plasma-enhanced CVD. The studied boron dopant concentrations, controlled by the [B]/[C] ratio in plasma, ranged from 1 × 10{sup 16} to 2 × 10{sup 21} atoms cm{sup −3}. The BDD films displayed microcrystalline structure, while the average size of crystallites decreased from 1 to 0.7 μm with increasing [B]/[C] ratios. The application of LII enabled a direct and high-resolution investigation of local distribution of impedance characteristics within the individual grains of BDD. Such an approach resulted in greater understanding of the microstructural control of properties at the grain level. We propose that the obtained surficial variation of impedance is correlated to the areas of high conductance which have been observed at the grain boundaries by using LII. We also postulate that the origin of high conductivity is due to either preferential boron accumulation, the presence of defects, or sp{sup 2} regions in the intragrain regions. The impedance modulus recorded by LII was in full agreement with the bulk impedance measurements. Both variables showed a decreasing trend with increasing [B]/[C] ratios, which is consistent with higher boron incorporation into BDD film.

  3. Reactive sputtering of YBaCuO thin films on polycrystalline zirconia substrates: optimization results

    NASA Astrophysics Data System (ADS)

    Degardin, A.; Bodin, C.; Dolin, C.; Kreisler, A.

    1998-01-01

    In situ elaboration of YBaCuO thin films, on polycrystalline yttria doped zirconia substrates, has been optimized. A reactive sputtering model has been developed and the electrical conductivity of the substrate has been studied as a function of temperature and doping. The J_c value of ≈ 3× 10^4~A/cm^2 at 77 K, measured on microbridges, is among the best reported in the literature for this substrate type. L'élaboration in situ de films minces d'YBaCuO, sur substrats de zircone polycristalline dopée à l'oxyde d'yttrium, a été optimisée en développant un modèle de pulvérisation réactive et en étudiant la conductivité électrique du substrat en fonction du dopage et de la température. La valeur de J_c ≈ 3× 10^4 ~A/cm^2 à 77 K, mesurée sur microponts, se situe parmi les meilleures citées dans la littérature pour ce type de substrat.

  4. On-Current Modeling of Polycrystalline Silicon Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Gupta, Navneet; Tyagi, B. P.

    2005-01-01

    We propose an on-current (above threshold voltage) model of polycrystalline silicon thin-film transistors (poly-Si TFTs). The model includes the study of the effect of trap state density, poly-Si inversion layer thickness and temperature on the TFT characteristics. Effective carrier mobility and I-V characteristics are described by considering the mechanism of capture and release of carriers at grain boundary trap states and the thermionic emission theory. It is found that at low as well as at high doping concentrations, the effective carrier mobility (µeff) increases with increasing temperature whereas a dip is observed at intermediate doping concentration. At very high and very low doping concentration the effect of temperature on the mobility is found to be almost negligible. Calculations reveal that effective carrier mobility and drain current increase as the gate bias increases and are larger for a lower trap state density. The calculated value of activation energy decreases as the gate bias increases and is larger for a larger poly-Si inversion layer thickness. A comparison between the present predictions and the experimental results shows reasonably good agreement.

  5. Local electrical conduction in polycrystalline La-doped BiFeO₃ thin films.

    PubMed

    Zhou, Ming-Xiu; Chen, Bo; Sun, Hai-Bin; Wan, Jian-Guo; Li, Zi-Wei; Liu, Jun-Ming; Song, Feng-Qi; Wang, Guang-Hou

    2013-06-07

    Local electrical conduction behaviors of polycrystalline La-doped BiFeO3 thin films have been investigated by combining conductive atomic force microscopy and piezoelectric force microscopy. Nanoscale current measurements were performed as a function of bias voltage for different crystal grains. Completely distinct conducting processes and resistive switching effects were observed in the grain boundary and grain interior. We have revealed that local electric conduction in a grain is dominated by both the grain boundary and ferroelectric domain, and is closely related to the applied electric field and the as-grown state of the grain. At lower voltages the electrical conduction is dominated by the grain boundary and is associated with the redistribution of oxygen vacancies in the grain boundary under external electric fields. At higher voltages both the grain boundary and ferroelectric domain are responsible for the electrical conduction of grains, and the electrical conduction gradually extends from the grain boundary into the grain interior due to the extension of the ferroelectric domain towards the grain interior. We have also demonstrated that the conduction dominated by the grain boundary exhibits a much small switching voltage, while the conduction of the ferroelectric domain causes a much high switching voltage in the grain interior.

  6. Scaling behavior of moisture-induced grain degradation in polycrystalline hybrid perovskite thin films

    DOE PAGES

    Wang, Qi; Chen, Bo; Liu, Ye; ...

    2017-01-01

    The stability of perovskite solar cells has shown a huge variation with respect to the film process and film morphology, while the underlining mechanism for the morphology-dependent degradation of the perovskite film has remained elusive. Herein, we report a scaling behavior of moisture-induced grain degradation in polycrystalline CH3NH3PbI3 films. The degradation rates of CH3NH3PbI3 films in moisture were shown to be sensitive to the grain sizes. The duration that was needed for different films to degrade by the same percent showed a linear relationship with the grain size, despite the fact that the films were formed by five different depositionmore » methods. This scaling behavior can be explained by the degradation along the in-plane direction, which is initiated at the grain boundary (GB). The GBs of CH3NH3PbI3 films consist of an amorphous intergranular layer, which allows quick diffusion of moisture into the perovskite films. It was found that thermal annealing induced surface self-passivation plays a critical role in stabilizing the surfaces of thin films and single crystals by reducing the moisture-sensitive methylammonium ions at the surface. Finally, the determination of the scaling behavior of grain degradation highlights the importance of stabilizing the GBs to improve the stability of perovskite solar cells.« less

  7. Scaling behavior of moisture-induced grain degradation in polycrystalline hybrid perovskite thin films

    SciTech Connect

    Wang, Qi; Chen, Bo; Liu, Ye; Deng, Yehao; Bai, Yang; Dong, Qingfeng; Huang, Jinsong

    2017-01-01

    The stability of perovskite solar cells has shown a huge variation with respect to the film process and film morphology, while the underlining mechanism for the morphology-dependent degradation of the perovskite film has remained elusive. Herein, we report a scaling behavior of moisture-induced grain degradation in polycrystalline CH3NH3PbI3 films. The degradation rates of CH3NH3PbI3 films in moisture were shown to be sensitive to the grain sizes. The duration that was needed for different films to degrade by the same percent showed a linear relationship with the grain size, despite the fact that the films were formed by five different deposition methods. This scaling behavior can be explained by the degradation along the in-plane direction, which is initiated at the grain boundary (GB). The GBs of CH3NH3PbI3 films consist of an amorphous intergranular layer, which allows quick diffusion of moisture into the perovskite films. It was found that thermal annealing induced surface self-passivation plays a critical role in stabilizing the surfaces of thin films and single crystals by reducing the moisture-sensitive methylammonium ions at the surface. Finally, the determination of the scaling behavior of grain degradation highlights the importance of stabilizing the GBs to improve the stability of perovskite solar cells.

  8. Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures.

    PubMed

    Antonuk, L E; Koniczek, M; McDonald, J; El-Mohri, Y; Zhao, Q; Behravan, M

    2008-01-01

    An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring how the 1/f, shot and thermal noise components of poly-Si TFTs, determined from current noise power spectral density measurements, as well as through calculation, can be used to assist in the development of imagers incorporating pixel amplification circuits based on such transistors.

  9. Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

    NASA Astrophysics Data System (ADS)

    Bhopal, Muhammad Fahad; Lee, Doo Won; Lee, Soo Hong

    2016-09-01

    Thin-film polycrystalline silicon ( pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm-1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

  10. Polycrystalline silicon thin-film solar cells with plasmonic-enhanced light-trapping.

    PubMed

    Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

    2012-07-02

    One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach. The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles. To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm(2), which can be increased up to 17-18 mA/cm(2) (~25% higher) after application of a simple diffuse back reflector made of a white paint. To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing

  11. Height-resolved quantification of microstructure and texture in polycrystalline thin films using TEM orientation mapping.

    PubMed

    Aebersold, A Brian; Alexander, Duncan T L; Hébert, Cécile

    2015-12-01

    A method is presented for the quantitative investigation of microstructure and texture evolution in polycrystalline thin films based on in-plane automated crystal orientation mapping in transmission electron microscopy, from the substrate up. To demonstrate the method we apply it to the example of low pressure metal-organic chemical vapor deposited ZnO layers. First, orientation mapping is applied to standard cross-section and plan-view transmission electron microscopy samples of films, illustrating how plan-view samples both reduce the occurrence of grain overlap that is detrimental to reliable orientation mapping and also improve sampling statistics compared to cross-sections. Motivated by this, orientation mapping has been combined with a double-wedge method for specimen preparation developed by Spiecker et al. (2007) [1], which creates a large area plan-view sample that traverses the film thickness. By measuring >10,000 grains in the film, the resulting data give access to grain size, orientation and misorientation distributions in function of height above the substrate within the film, which are, in turn, the inputs necessary for quantitative assessment of growth models and simulations. The orientation data are directly related to microstructural images, allowing correlation of orientations with in-plane and out-of-plane grain sizes and shapes. The spatial correlation of the entire data set gives insights into previously unnoticed growth mechanisms such as the presence of renucleation or preferred misorientations. Finally, the data set can be used to guide targeted, local studies by other transmission electron microscopy techniques. This is demonstrated by the site-specific application of nano-beam diffraction to validate the presence of coherent [21̄1̄0]/(011̄3) twin boundaries first suggested by the orientation mapping.

  12. Influence of thickness on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Dhaka, M. S.

    2016-02-01

    This paper presents the influence of thickness on physical properties of polycrystalline CdTe thin films. The thin films of thickness 450 nm, 650 nm and 850 nm were deposited employing thermal vacuum evaporation technique on glass and indium tin oxide (ITO) coated glass substrates. The physical properties of these as-grown thin films were investigated employing the X-ray diffraction (XRD), source meter, UV-Vis spectrophotometer, scanning electron microscopy (SEM) coupled with energy dispersive spectroscopy (EDS). The structural analysis reveals that the films have zinc-blende cubic structure and polycrystalline in nature with preferred orientation (111). The structural parameters like lattice constant, interplanar spacing, grain size, strain, dislocation density and number of crystallites per unit area are calculated. The average grain size and optical band gap are found in the range 15.16-21.22 nm and 1.44-1.63 eV respectively and observed to decrease with thickness. The current-voltage characteristics show that the electrical conductivity is observed to decrease with thickness. The surface morphology shows that films are free from crystal defects like pin holes and voids as well as homogeneous and uniform. The EDS patterns show the presence of cadmium and tellurium elements in the as grown films. The experimental results reveal that the film thickness plays significant role on the physical properties of as-grown CdTe thin films and higher thickness may be used as absorber layer to solar cells applications.

  13. Mechanical properties of free-standing polycrystalline metallic thin films and multilayers

    NASA Astrophysics Data System (ADS)

    Huang, Haibo

    1998-11-01

    A laser-diffraction tensile tester and a balance-beam creep apparatus were improved and applied to the study of free standing polycrystalline thin films with a strong $ texture. Studied are electron beam deposited Ag, Cu, Al films, and Ag/Cu multilayers consisting of alternating Ag and Cu layers with 1:1 thickness ratio. All films have a total thickness around 3 mum. In tensile testing, a thin polymeric two-dimensional diffraction grid was deposited on the film surface by microlithographic techniques. Local strains were measured from the relative displacements of two diffracted laser spots. This allows determination of Young's modulus, Poisson's ratio and, since large strains can be measured, the yield stress, ultimate tensile strength and fracture strain. The average values of the Young moduli and Poisson ratios, determined from hundreds of measurements, are 63 GPa and 0.42 for Ag, 102 GPa and 0.37 for Cu, 57 GPa and 0.41 for Al, and 87.5 GPa and 0.38 for Ag/Cu multilayers. In all cases, the Young moduli are about 20% lower than the values calculated from the literature data and are independent of the bilayer repeat length, λ , in the Ag/Cu multilayers. No "supermodulus" effect was observed at small values of λ . An anelastic model was proposed to explain the low Young moduli, the hysteresis loops on the stress-strain curves, and a 4.3 pm 0.2 GPa/decade strain rate dependence of the Young modulus in Al. The ductility of the Ag/Cu multilayers decreases when λ is reduced. For λ 80 nm, the yield stress increases linearly with λsp{{-}alpha} where alpha = 0.244. The results are compared to the predictions of Hall-Petch-type models. In creep testing, steady-state creep rates were measured on Cu films as a function of stress and temperature. In the high temperature-low stress region (100-650spcircC, 5-90 MPa), the creep rate is described by dot\\varepsilon =A{\\cdot}sigmasp{n} exp\\{{-}Q/kT\\}. A core-diffusion controlled dislocation climb model was proposed to

  14. Impact of annealing on physical properties of e-beam evaporated polycrystalline CdO thin films for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Purohit, Anuradha; Chander, S.; Dhaka, M. S.

    2017-04-01

    An impact of annealing on the physical properties of polycrystalline CdO thin films is carried out in this study. CdO thin films of thickness 650 nm were fabricated on glass and indium tin oxide (ITO) substrates employing e-beam evaporation technique. The pristine thin films were annealed in air atmosphere at 250 °C, 400 °C and 550 °C for one hour followed by investigation of structural, optical, electrical and morphological properties along with elemental composition using X-ray diffraction (XRD), UV-Vis spectrophotometer, Fourier transform infrared (FTIR) spectrometer, source meter, scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS), respectively. XRD patterns confirmed the polycrystalline nature and cubic structure (with space group Fm 3 bar m) of the films. The crystallographic parameters are calculated and found to be influenced by the post-air annealing treatment. The optical study shows that direct band gap is ranging from 1.98 eV to 2.18 eV and found to be decreased with post-annealing. The refractive index and optical conductivity are also increased with annealing temperature. The current-voltage characteristics show ohmic behaviour of the annealed films. The surface morphology is observed to be improved with annealing and grain-size is increased as well as EDS spectrum confirmed the presence of cadmium (Cd) and oxygen (O) in the deposited films.

  15. Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1990--15 January 1991

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.

    1991-11-01

    Results and conclusion of Phase I of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe{sub 2} and CdTe solar cells. The kinetics of the formation of CuInSe{sub 2} by selenization with hydrogen selenide was investigated and a CuInSe{sub 2}/CdS solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe{sub 2} films and a cell efficiency of 7%. Detailed investigations of the open circuit voltage of CuInSe{sub 2} solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe{sub 2} thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe{sub 2} is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10% can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm{sup 2} are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.

  16. Ambient condition laser writing of graphene structures on polycrystalline SiC thin film deposited on Si wafer

    SciTech Connect

    Yue, Naili; Zhang, Yong; Tsu, Raphael

    2013-02-18

    We report laser induced local conversion of polycrystalline SiC thin-films grown on Si wafers into multi-layer graphene, a process compatible with the Si based microelectronic technologies. The conversion can be achieved using a 532 nm CW laser with as little as 10 mW power, yielding {approx}1 {mu}m graphene discs without any mask. The conversion conditions are found to vary with the crystallinity of the film. More interestingly, the internal structure of the graphene disc, probed by Raman imaging, can be tuned with varying the film and illumination parameters, resembling either the fundamental or doughnut mode of a laser beam.

  17. Ambient condition laser writing of graphene structures on polycrystalline SiC thin film deposited on Si wafer

    NASA Astrophysics Data System (ADS)

    Yue, Naili; Zhang, Yong; Tsu, Raphael

    2013-02-01

    We report laser induced local conversion of polycrystalline SiC thin-films grown on Si wafers into multi-layer graphene, a process compatible with the Si based microelectronic technologies. The conversion can be achieved using a 532 nm CW laser with as little as 10 mW power, yielding ˜1 μm graphene discs without any mask. The conversion conditions are found to vary with the crystallinity of the film. More interestingly, the internal structure of the graphene disc, probed by Raman imaging, can be tuned with varying the film and illumination parameters, resembling either the fundamental or doughnut mode of a laser beam.

  18. Transition between Efros–Shklovskii and Mott variable-range hopping conduction in polycrystalline germanium thin films

    NASA Astrophysics Data System (ADS)

    Li, Zhaoguo; Peng, Liping; Zhang, Jicheng; Li, Jia; Zeng, Yong; Luo, Yuechuan; Zhan, Zhiqiang; Meng, Lingbiao; Zhou, Minjie; Wu, Weidong

    2017-03-01

    We report on the electrical transport properties of polycrystalline germanium thin films which are grown by the DC magnetron sputtering method. The temperature dependent resistance of seven devices are measured from 290 K down to 10 K. The thermal excitation model dominating the transport properties at the high temperature regime (above ∼60 K) is demonstrated and the low temperature electron transport is governed by the variable-range hopping (VRH) mechanism. Moreover, we observed a transition from Efros–Shklovskii to Mott VRH at ∼25 K over the entire VRH conduction regime, which is well described by a universal scaling law.

  19. Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

    PubMed Central

    Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

    2012-01-01

    One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach. The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles. To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint. To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing

  20. Enhanced electrical properties at boundaries including twin boundaries of polycrystalline CdTe thin-film solar cells.

    PubMed

    Li, H; Liu, X X; Lin, Y S; Yang, B; Du, Z M

    2015-05-07

    The effect of grain boundaries (GBs), in particular twin boundaries (TBs), on CdTe polycrystalline thin films is studied by conductive atomic force microscopy (C-AFM), electron-beam-induced current (EBIC), scanning Kelvin probe microscopy (SKPM), electron backscatter diffraction (EBSD), and scanning transmission electron microscopy (STEM). Four types of CdTe grains with various densities of {111} Σ3 twin boundaries (TBs) are found in Cl-treated CdTe polycrystalline thin films: (1) grains having multiple {111} Σ3 TBs with a low angle to the film surface; (2) grains having multiple {111} Σ3 TBs parallel to the film surfaces; (3) small grains on a scale of not more than 500 nm, composed of Cd, Cl, Te, and O; and (4) CdTe grains with not more than two {111} Σ3 TBs. Grain boundaries (including TBs) exhibit enhanced current transport phenomena. However, the {111} Σ3 TB is much more beneficial to micro-current transport. The enhanced current transport can be explained by the lower electron potential at GBs (including TBs) than the grain interiors (GIs). Our results open new opportunities for enhancing solar cell performances by controlling the grain boundaries, and in particular TBs.

  1. Structure and magnetic properties of polycrystalline iron-platium and cobalt-platinum thin films for high density recording media

    NASA Astrophysics Data System (ADS)

    Jeong, Sangki

    2002-09-01

    The goal of this project was to investigate and increase the feasibility of use of FePt and CoPt polycrystalline thin films as high-density recording media, with a focus on targeting perpendicular recording. Understanding the atomic ordering process, developing the proper texture and small grains, lowering the processing temperature and optimizing magnetic properties were the main subjects of this thesis work. In this thesis, nano-structured polycrystalline high anisotropy thin films have been fabricated and characterized. Polycrystalline CoPt and FePt films exhibit perpendicular anisotropy after an annealing process only when their thickness is less than 5 nm. High temperature annealing is still required to obtain an atomically ordered phase with nearly full ordering. The ordering phase transformation is a discontinuous transformation that yields an inhomogeneous microstructure where significant amount of FCC phase remains, unless a long time annealing process is performed. To lower the atomic ordering temperature, an in-situ ordering process has been performed and the various underlayer structures with an MgO seed layer, have been deposited and investigated. Thin films with thicknesses below 10 nm exhibit perpendicular anisotropy with an average grain size in the range of 10--15 nm in this film. FePt [001] textured films using Pt/Ag seeding layer exhibit lower annealing temperature than FePt/MgO films, while other Ag or Cr seedlayers do not produce faster ordering kinetics. Based on the detailed analysis of nanostructure of FePt thin films, it has been learned that FCC disordered nanoclusters remains in the ordered grains. Detailed observation of magnetic properties and nanostructure by HRTEM suggests that, though a thermally activated component of the switching is observed, the low value of coercivity can be attributed predominantly to reversal processes associated with defect related domain nucleation. We postulate that the nucleation occurs in less ordered

  2. Impact of thermal annealing on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Dhaka, M. S.

    2016-06-01

    A study on impact of post-deposition thermal annealing on the physical properties of CdTe thin films is undertaken in this paper. The thin films of thickness 500 nm were grown on ITO and glass substrates employing thermal vacuum evaporation followed by post-deposition thermal annealing in air atmosphere within low temperature range 150-350 °C. These films were subjected to the XRD, UV-Vis NIR spectrophotometer, source meter, SEM coupled with EDS and AFM for structural, optical, electrical and surface topographical analysis respectively. The diffraction patterns reveal that the films are having zinc-blende cubic structure with preferred orientation along (111) and polycrystalline in nature. The crystallographic parameters are calculated and discussed in detail. The optical band gap is found in the range 1.48-1.64 eV and observed to decrease with thermal annealing. The current-voltage characteristics show that the CdTe films exhibit linear ohmic behavior. The SEM studies show that the as-grown films are homogeneous, uniform and free from defects. The AFM studies reveal that the surface roughness of films is observed to increase with annealing. The experimental results reveal that the thermal annealing has significant impact on the physical properties of CdTe thin films and may be used as absorber layer to the CdTe/CdS thin films solar cells.

  3. Structural and optical analysis of 60Co gamma-irradiated thin films of polycrystalline Ga10Se85Sn5

    NASA Astrophysics Data System (ADS)

    Ahmad, Shabir; Asokan, K.; Shahid Khan, Mohd.; Zulfequar, M.

    2015-12-01

    The present study focuses on the effects of gamma irradiation on structural and optical properties of polycrystalline Ga10Se85Sn5 thin films with a thickness of ∼300 nm deposited by the thermal evaporation technique on cleaned glass substrates. X-ray diffraction patterns of the investigated thin films show that crystallite growth occurs in the orthorhombic phase structure. The surface study carried out by using the scanning electron microscope (SEM) confirms that the grain size increases with gamma irradiation. The optical parameters were estimated from optical transmission spectra data measured from a UV-vis-spectrophotometer in the wavelength range of 200-1100 nm. The refractive index dispersion data of the investigated thin films follow the single oscillator model. The estimated values of static refractive index n0, oscillator strength Ed, zero frequency dielectric constant ε0, optical conductivity σoptical and the dissipation factor increases after irradiation, while the single oscillator energy Eo decreases after irradiation. It was found that the value of the optical band gap of the investigated thin films decreases and the corresponding absorption coefficient increases continuously with an increase in the dose of gamma irradiation. This post irradiation changes in the values of optical band gap and absorption coefficient were interpreted in terms of the bond distribution model.

  4. Transient and End Silicide Phase Formation in Thin Film Ni/polycrystalline-Si Reactions for Fully Silicided Gate Applications

    SciTech Connect

    Kittl,J.; Pawlak, M.; Torregiani, C.; Lauwers, A.; Demeurisse, C.; Vrancken, C.; Absil, P.; Biesemans, S.; Coia, C.; et. al

    2007-01-01

    The Ni/polycrystalline-Si thin film reaction was monitored by in situ x-ray diffraction during ramp annealings, obtaining a detailed view of the formation and evolution of silicide phases in stacks of interest for fully silicided gate applications. Samples consisted of Ni (30-170 nm)/polycrystalline-Si (100 nm)/SiO2 (10-30 nm) stacks deposited on (100) Si. The dominant end phase (after full silicidation) was found to be well controlled by the deposited Ni to polycrystalline-Si thickness ratio (tNi/tSi), with formation of NiSi2 ( {approx} 600 C), NiSi ( {approx} 400 C), Ni3Si2 ( {approx} 500 C), Ni2Si, Ni31Si12 ( {approx} 420 C), and Ni3Si ( {approx} 600 C) in stacks with tNi/tSi of 0.3, 0.6, 0.9, 1.2, 1.4, and 1.7, respectively. NiSi and Ni31Si12 were observed to precede formation of NiSi2 and Ni3Si, respectively, as expected for the phase sequence conventionally reported. Formation of Ni2Si was observed at early stages of the reaction. These studies revealed, in addition, the formation of transient phases that appeared and disappeared in narrow temperature ranges, competing with formation of the phases expected in the conventional phase sequence. These included the transient formation of NiSi and Ni31Si12 in stacks in which these phases are not expected to form (e.g., tNi/tSi of 1.7 and 0.9, respectively), at temperatures similar to those in which these phases normally grow.

  5. Ultrafast optical control of magnetization dynamics in polycrystalline bismuth doped iron garnet thin films

    NASA Astrophysics Data System (ADS)

    Deb, Marwan; Vomir, Mircea; Rehspringer, Jean-Luc; Bigot, Jean-Yves

    2015-12-01

    Controlling the magnetization dynamics on the femtosecond timescale is of fundamental importance for integrated opto-spintronic devices. For industrial perspectives, it requires to develop simple growth techniques for obtaining large area magneto-optical materials having a high amplitude ultrafast Faraday or Kerr response. Here we report on optical pump probe studies of light induced spin dynamics in high quality bismuth doped iron garnet polycrystalline film prepared by the spin coating method. We demonstrate an ultrafast non-thermal optical control of the spin dynamics using both circularly and linearly polarized pulses.

  6. Impact of Surface Chemistry on Grain Boundary Induced Intrinsic Stress Evolution during Polycrystalline Thin Film Growth

    NASA Astrophysics Data System (ADS)

    Qi, Y.; Sheldon, B. W.; Guo, H.; Xiao, X.; Kothari, A. K.

    2009-02-01

    First principles calculations were integrated with cohesive zone and growth chemistry models to demonstrate that adsorbed species can significantly alter stresses associated with grain boundary formation during polycrystalline film growth. Using diamond growth as an example, the results show that lower substrate temperatures increase the hydrogen content at the surface, which reduces tensile stress, widens the grain boundary separations, and permits additional atom insertions that can induce compressive stress. More generally, this work demonstrates that surface heteroatoms can lead to behavior which is not readily described by existing models of intrinsic stress evolution.

  7. Ultrafast optical control of magnetization dynamics in polycrystalline bismuth doped iron garnet thin films

    SciTech Connect

    Deb, Marwan Vomir, Mircea; Rehspringer, Jean-Luc; Bigot, Jean-Yves

    2015-12-21

    Controlling the magnetization dynamics on the femtosecond timescale is of fundamental importance for integrated opto-spintronic devices. For industrial perspectives, it requires to develop simple growth techniques for obtaining large area magneto-optical materials having a high amplitude ultrafast Faraday or Kerr response. Here we report on optical pump probe studies of light induced spin dynamics in high quality bismuth doped iron garnet polycrystalline film prepared by the spin coating method. We demonstrate an ultrafast non-thermal optical control of the spin dynamics using both circularly and linearly polarized pulses.

  8. Chemical surface modification of polycrystalline platinum thin-films to promote preferential chemisorption of n-hexane, piperidine, and cyclohexane

    SciTech Connect

    Thomas, V.; Schwank, J.; Gland, J.

    1994-12-31

    In this study, hard/soft Lewis acid-base (HSAB) principles are used to modify a thin-polycrystalline platinum film to promote preferential chemisorption of molecules such as piperidine, n-hexane, and cyclohexane. Specifically, the particle size and electron density distribution of the platinum surface is modified using thermal treatment and co-adsorption of electro-positive and negative species. These studies are conducted in an ultra-high vacuum chamber. The platinum surface is characterized, before and after modification protocols, using a variety of in-situ and ex-situ techniques. These include temperature programmed desorption (TPD), both resistance change and work function measurements, and both X-ray photoelectron spectroscopy and diffraction.

  9. Tailoring of in-plane magnetic anisotropy in polycrystalline cobalt thin films by external stress

    NASA Astrophysics Data System (ADS)

    Kumar, Dileep; Singh, Sadhana; Vishawakarma, Pramod; Dev, Arun Singh; Reddy, V. R.; Gupta, Ajay

    2016-11-01

    Polycrystalline Co films of nominal thickness ~180 Å were deposited on intentionally curved Si substrates. Tensile and compressive stresses of 100 MPa and 150 MPa were induced in the films by relieving the curvature. It has been found that, within the elastic limit, presence of stress leads to an in-plane magnetic anisotropy in the film and its strength increases with increasing stress. Easy axis of magnetization in the films is found to be parallel/ transverse to the compressive /tensile stresses respectively. The origin of magnetic anisotropy in the stressed films is understood in terms of magneto- elastic coupling, where the stress try to align the magnetic moments in order to minimize the magneto-elastic as well as anisotropy energy. Tensile stress is also found to be responsible for the surface smoothening of the films, which is attributed to the movement of the atoms associated with the applied stress. The present work provides a possible way to tailor the magnetic anisotropy and its direction in polycrystalline and amorphous films using external stress.

  10. Charge transport in polycrystalline silicon thin-films on glass substrates

    NASA Astrophysics Data System (ADS)

    Scheller, L.-P.; Nickel, N. H.

    2012-07-01

    Charge carrier transport in solid-phase crystallized polycrystalline silicon (poly-Si) was investigated as a function of the deposition temperature, Td, the amorphous starting material and the used substrates. The samples were characterized using temperature dependent transport measurements to determine the carrier concentration, mobility, and conductivity. Samples prepared on a-SiN:H covered borofloat glass exhibit a low carrier concentration that is independent of Td. In these samples, charge transport is dominated by intra-grain scattering mechanisms. In contrast, when poly-Si is prepared on corning glass, the carrier concentration shows an inverted U-shape behavior with increasing deposition temperature. The Hall mobility is thermally activated, which is consistent with thermionic carrier emission over potential energy barriers. The change of the activation energy with experimental parameters is accompanied by a large change of the exponential prefactor by more than 4 orders of magnitude. This is indicative of a Meyer-Neldel behavior. Moreover, at low temperatures, the conductivity deviates from an activated behavior indicating hopping transport with a mean hopping distance of ≈140 Å and an energy difference of ≈82 meV between the participating states. To derive insight into the underlying transport mechanisms and to determine information on barrier energy heights and grain-boundary defect-densities, the experimental data were analyzed employing transport models for polycrystalline materials.

  11. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

    SciTech Connect

    Machida, Emi; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ikenoue, Hiroshi

    2012-12-17

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

  12. Schottky Barrier Thin Film Transistor (SB-TFT) on low-temperature polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    De Iacovo, A.; Ferrone, A.; Colace, L.; Minotti, A.; Maiolo, L.; Pecora, A.

    2016-12-01

    We report on the fabrication and characterization of Schottky barrier transistors on polycrystalline silicon. The transistors were realized exploiting Cr-Si and Ti-Si Schottky barrier with a low thermal budget process, compatible with polymeric, ultraflexible substrates. We obtained devices with threshold voltages as low as 1.7 V (for n channel) and 4 V (for p channel) with channel lengths ranging from 2 to 40 μm. Resulting on/off ratios are as high as 5 · 103. The devices showed threshold voltages and subthreshold slopes comparable with already published N- and P-MOS devices realized with the same process on polyimide substrates thus representing a cheaper and scalable alternative to ultraflexible transistors with doped source and drain.

  13. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing.

    PubMed

    Machida, Emi; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ikenoue, Hiroshi

    2012-12-17

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 μm, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

  14. Estimation of steady-state leakage current in polycrystalline PZT thin films

    NASA Astrophysics Data System (ADS)

    Podgorny, Yury; Vorotilov, Konstantin; Sigov, Alexander

    2016-09-01

    Estimation of the steady state (or "true") leakage current Js in polycrystalline ferroelectric PZT films with the use of the voltage-step technique is discussed. Curie-von Schweidler (CvS) and sum of exponents (Σ exp ) models are studied for current-time J (t) data fitting. Σ exp model (sum of three or two exponents) gives better fitting characteristics and provides good accuracy of Js estimation at reduced measurement time thus making possible to avoid film degradation, whereas CvS model is very sensitive to both start and finish time points and give in many cases incorrect results. The results give rise to suggest an existence of low-frequency relaxation processes in PZT films with characteristic duration of tens and hundreds of seconds.

  15. Role of Polycrystalline Thin-Film PV Technologies in Competitive PV Module Markets: Preprint

    SciTech Connect

    von Roedern, B.; Ullal, H. S.

    2008-05-01

    This paper discusses the developments in thin-film PV technologies and provides an outlook on future commercial module efficiencies achievable based on today's knowledge about champion cell performance.

  16. Progress Toward a Stabilization and Preconditioning Protocol for Polycrystalline Thin-Film Photovoltaic Modules

    SciTech Connect

    del Cueto, J. A.; Deline, C. A.; Rummel, S. R.; Anderberg, A.

    2010-08-01

    Cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules can exhibit substantial variation in measured performance depending on prior exposure history. This study examines the metastable performance changes in these PV modules with the goal of establishing standard preconditioning or stabilization exposure procedures to mitigate measured variations prior to current-voltage (IV) measurements.

  17. Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline lead zirconate titanate thin films

    NASA Astrophysics Data System (ADS)

    Araújo, E. B.; Lima, E. C.; Bdikin, I. K.; Kholkin, A. L.

    2013-05-01

    Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric, and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350 °C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300 °C. For pyrochlore-free PZT thin films, a small (100)-orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. The increase of self-polarization with the film thickness increasing from 200 nm to 710 nm suggests that Schottky barriers and/or mechanical coupling near the film-substrate interface are not primarily responsible for the observed self-polarization effect in our films.

  18. Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lee, Sang-hoon; Jung, Jae-soo; Lee, Sung-soo; Lee, Sung-bo; Hwang, Nong-moon

    2016-11-01

    For the applications such as flexible displays and solar cells, the direct deposition of crystalline silicon films on a flexible polymer substrate has been a great issue. Here, we investigated the direct deposition of polycrystalline silicon films on a polyimide film at the substrate temperature of 200 °C. The low temperature deposition of crystalline silicon on a flexible substrate has been successfully made based on two ideas. One is that the Si-Cl-H system has a retrograde solubility of silicon in the gas phase near the substrate temperature. The other is the new concept of non-classical crystallization, where films grow by the building block of nanoparticles formed in the gas phase during hot-wire chemical vapor deposition (HWCVD). The total amount of precipitation of silicon nanoparticles decreased with increasing HCl concentration. By adding HCl, the amount and the size of silicon nanoparticles were reduced remarkably, which is related with the low temperature deposition of silicon films of highly crystalline fraction with a very thin amorphous incubation layer. The dark conductivity of the intrinsic film prepared at the flow rate ratio of RHCl=[HCl]/[SiH4]=3.61 was 1.84×10-6 Scm-1 at room temperature. The Hall mobility of the n-type silicon film prepared at RHCl=3.61 was 5.72 cm2 V-1s-1. These electrical properties of silicon films are high enough and could be used in flexible electric devices.

  19. On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

    NASA Astrophysics Data System (ADS)

    Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

    2017-04-01

    Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

  20. On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

    NASA Astrophysics Data System (ADS)

    Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

    2017-01-01

    Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

  1. Structural and optical properties of (Ag,Cu)(In,Ga)Se{sub 2} polycrystalline thin film alloys

    SciTech Connect

    Boyle, J. H.; Shafarman, W. N.; Birkmire, R. W.; McCandless, B. E.

    2014-06-14

    The structural and optical properties of pentenary alloy (Ag,Cu)(In,Ga)Se{sub 2} polycrystalline thin films were characterized over the entire compositional range at a fixed (Cu + Ag)/(In + Ga) ratio. Films deposited at 550 °C on bare and molybdenum coated soda-lime glass by elemental co-evaporation in a single-stage process with constant incident fluxes exhibit single phase chalcopyrite structure, corresponding to 122 spacegroup (I-42d) over the entire compositional space. Unit cell refinement of the diffraction patterns show that increasing Ag substitution for Cu, the refined a{sub o} lattice constant, (Ag,Cu)-Se bond length, and anion displacement increase in accordance with the theoretical model proposed by Jaffe, Wei, and Zunger. However, the refined c{sub o} lattice constant and (In,Ga)-Se bond length deviated from theoretical expectations for films with mid-range Ag and Ga compositions and are attributed to influences from crystallographic bond chain ordering or cation electronegativity. The optical band gap, derived from transmission and reflection measurements, widened with increasing Ag and Ga content, due to influences from anion displacement and cation electronegativity, as expected from theoretical considerations for pseudo-binary chalcopyrite compounds.

  2. Tunable thermal conductivity of thin films of polycrystalline AlN by structural inhomogeneity and interfacial oxidation.

    PubMed

    Jaramillo-Fernandez, J; Ordonez-Miranda, J; Ollier, E; Volz, S

    2015-03-28

    The effect of the structural inhomogeneity and oxygen defects on the thermal conductivity of polycrystalline aluminum nitride (AlN) thin films deposited on single-crystal silicon substrates is experimentally and theoretically investigated. The influence of the evolution of crystal structure, grain size, and out-of plane disorientation along the cross plane of the films on their thermal conductivity is analyzed. The impact of oxygen-related defects on thermal conduction is studied in AlN/AlN multilayered samples. Microstructure, texture, and grain size of the films were characterized by X-ray diffraction and scanning and transmission electron microscopy. The measured thermal conductivity obtained with the 3-omega technique for a single and multiple layers of AlN is in fairly good agreement with the theoretical predictions of our model, which is developed by considering a serial assembly of grain distributions. An effective thermal conductivity of 5.92 W m(-1) K(-1) is measured for a 1107.5 nm-thick multilayer structure, which represents a reduction of 20% of the thermal conductivity of an AlN monolayer with approximately the same thickness, due to oxygen impurities at the interface of AlN layers. Our results show that the reduction of the thermal conductivity as the film thickness is scaled down, is strongly determined by the structural inhomogeneities inside the sputtered films. The origin of this non-homogeneity and the effect on phonon scattering are also discussed.

  3. Cu-dependent phase transition in polycrystalline CuGaSe2 thin films grown by three-stage process

    NASA Astrophysics Data System (ADS)

    Islam, M. M.; Yamada, A.; Sakurai, T.; Kubota, M.; Ishizuka, S.; Matsubara, K.; Niki, S.; Akimoto, K.

    2011-07-01

    The Cu-dependent phase transition in polycrystalline CuGaSe2 thin films has been studied by an electron probe micro-analyzer (EPMA) and the synchrotron x-ray diffraction method. A Cu-deficiency parameter, Z, defined as (1 - Cu/Ga) was used to study the phase transition. Upon increasing the Z-value, the composition of the films on the Cu2Se-Ga2Se3 pseudo binary tie line was found to shift from the stoichiometric CuGaSe2 (1:1:2) (Z = 0) to the Ga-rich composition through the formation of several ordered defect compounds.The structural modification in the Cu-poor CuGaSe2 film has been investigated by the synchrotron x-ray diffraction method. The existence of the Cu-poor surface phase over the near-stoichiometric bulk CuGaSe2 film was confirmed by the fitting of the accelerated voltage dependent EPMA data.

  4. Development of tandem cells consisting of GaAs single crystal and CuInSe2/CdZnS polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Kim, Namsoo P.; Stanbery, Billy J.; Gale, Ronald P.; McClelland, Robert W.

    1989-04-01

    The tandem cells consisting of GaAs single crystal and CuInSe2 polycrystalline thin films are being developed under the joint program of the Boeing Co. and Kopin Corp. to meet the increasing power needs for future spacecraft. The updated status of this program is presented along with experimental results such as cell performance, and radiation resistance. Other cell characteristics including the specific power of and the interconnect options for this tandem cell approach are also discussed.

  5. Development of tandem cells consisting of GaAs single crystal and CuInSe2/CdZnS polycrystalline thin films

    NASA Technical Reports Server (NTRS)

    Kim, Namsoo P.; Stanbery, Billy J.; Gale, Ronald P.; Mcclelland, Robert W.

    1989-01-01

    The tandem cells consisting of GaAs single crystal and CuInSe2 polycrystalline thin films are being developed under the joint program of the Boeing Co. and Kopin Corp. to meet the increasing power needs for future spacecraft. The updated status of this program is presented along with experimental results such as cell performance, and radiation resistance. Other cell characteristics including the specific power of and the interconnect options for this tandem cell approach are also discussed.

  6. Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Cleaver, William M.; Barron, Andrew R.; Power, Michael B.; Hepp, Aloysius F.

    1992-01-01

    The dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.

  7. Tutorial: Understanding residual stress in polycrystalline thin films through real-time measurements and physical models

    NASA Astrophysics Data System (ADS)

    Chason, Eric; Guduru, Pradeep R.

    2016-05-01

    Residual stress is a long-standing issue in thin film growth. Better understanding and control of film stress would lead to enhanced performance and reduced failures. In this work, we review how thin film stress is measured and interpreted. The results are used to describe a comprehensive picture that is emerging of what controls stress evolution. Examples from multiple studies are discussed to illustrate how the stress depends on key parameters (e.g., growth rate, material type, temperature, grain size, morphology, etc.). The corresponding stress-generating mechanisms that have been proposed to explain the data are also described. To develop a fuller understanding, we consider the kinetic factors that determine how much each of these processes contributes to the overall stress under different conditions. This leads to a kinetic model that can predict the dependence of the stress on multiple parameters. The model results are compared with the experiments to show how this approach can explain many features of stress evolution.

  8. polycrystalline ceramics

    NASA Astrophysics Data System (ADS)

    Cai, Yunqi; Ma, Ji; Cui, Qi; Wang, Wenzhang; Zhang, Hui; Chen, Qingming

    2014-12-01

    La2/3Ca1/3MnO3 polycrystalline ceramics were synthesized by sol-gel method. Sharp temperature coefficient of resistance (TCR) variation (with peak value up to 22 %) has been observed near the metal-insulator transition temperature T MI (273 K) for the sample sintered at 1,450 °C. This TCR value is much higher than the previously reported values for the undoped and Ag-doped La0.67Ca0.33MnO3 samples and is comparable to the optimized thin films. It was concluded that the improved physical properties of the La0.67Ca0.33MnO3 material are due to its improved microstructure and homogeneity.

  9. Electrochemical photovoltaic and photoelectrochemical storage cells based on II-VI polycrystalline thin film materials

    SciTech Connect

    Wallace, W.L.

    1983-06-01

    Research on electrochemical photovoltaic cells incorporating thin film CdSe and CdSe /SUB x/ Te /SUB 1-x/ photoanodes has progressed to the point where efficiencies of up to 7% can be achieved on small area electrodes using a polysulfide electrolyte. Higher efficiencies can be obtained in alternate electrolytes in significantly less stable systems. The major limitations on cell efficiency are associated with the open circuit voltage and fill factor. At present, the most promising photoelectrochemical storage system is an in situ three electrode cell which consists of an n-CdSe /SUB x/ Te /SUB 1-x/ photoanode and CoS counterelectrode in a sulfide/polysulfide electrolyte and a Sn/SnS storage electrode isolated in an aqueous sulfide electrolyte.

  10. Research on polycrystalline thin-film CuGaInSe2 solar cells

    NASA Astrophysics Data System (ADS)

    Stanbery, B. J.; Chen, W. S.; Devaney, W. E.; Stewart, J. W.

    1992-11-01

    This report describes research to fabricate high-efficiency CdZnS/CuInGaSe2 (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13 percent efficient, 1-sq cm total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO / Cd(0.82)Zn(0.18)S / CuIn(0.80)Ga(0.20)Se2 cell that was verified at NREL under standard testing conditions at 13.1 percent efficiency with V(sub oc) = 0.581 V, J(sub sc) = 34.8 mA/sq cm, FF = 0.728, and a cell area of 0.979 sq cm.

  11. Research on polycrystalline thin-film CuInGaSe2 solar cells

    NASA Astrophysics Data System (ADS)

    Chen, W. S.; Stewart, J. M.; Mickelsen, R. A.; Devaney, W. E.; Stanbery, B. J.

    1993-10-01

    This report describes work to fabricate high-efficiency CdZnS/CuInGaSe2, thin-film solar cells and to develop improved transparent conductor window layers such as ZnO. The specific technical milestone for Phase 1 was to demonstrate an air mass (AM) 1.5 global 13% , 1-cm(exp 2) total-area CuInGaSe2 (CIGS) thin-film solar cell. For Phase 2, the objective was to demonstrate an AM1.5 global 13.5%, 1-cm(exp 2) total-area efficiency. We focused our activities on three areas. First, we modified the CIGS deposition system to double its substrate capacity. Second, we developed new tooling to enable investigation of a modified aqueous CdZnS process in which the goal was to improve the yield of this critical step in the device fabrication process. Third, we upgraded the ZnO sputtering system to improve its reliability and reproducibility. A dual rotatable cathode metallic source was installed, and the sputtering parameters were further optimized to improve ZnO's properties as a transparent conducting oxide (TCO). Combining the refined CdZnS process with CIGS from the newly fixtured deposition system enable us to fabricate and deliver a ZnO/Cd(0.08)Zn(0.20)S/CuIn(0.74)Ga(0.26)Se2 cell on alumina with I-V characteristics, as measured by NREL under standard test conditions, of 13.7% efficiency with V(proportional to) = 0.5458 V, J(sub sc) = 35.48 mA/cm(exp 2), FF = 0.688, and efficiency = 14.6%.

  12. Thin film polycrystalline silicon solar cells: first technical progress report, April 15, 1980-July 15, 1980

    SciTech Connect

    1980-07-01

    The objectives of this contract are to fabricate large area thin film silicon solar cells with AM1 efficiency of 10% or greater with good reproducibility and good yield and to assess the feasibility of implementing this process for manufacturing solar cells at a cost of $300/kWe. Efforts during the past quarter have been directed to the purification of metallurgical silicon, the preparation of substrates, and the fabrication and characterization of solar cells. The partial purification of metallurgical silicon by extraction with aqua regia has been investigated in detail, and the resulting silicon was analyzed by the atomic absorption technique. The unidirectional solidification of aqua regia-extracted metallurgical silicon on graphite was used for the preparation of substrates, and the impurity distribution in the substrate was also determined. Large area (> 30 cm/sup 2/) solar cells have been prepared from aqua regia-extracted metallurgical silicon substrates by the thermal reduction of trichlorosilane containing appropriate dopants. Chemically deposited tin-dioxide films were used as antireflection coatings. Solar cells with AM1 efficiencies of about 8.5% have been obtained. Their spectral response, minority carrier diffusion length, and I/sub sc/-V/sub oc/ relation have been measured.

  13. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    NASA Astrophysics Data System (ADS)

    Li, Wei; Varlamov, Sergey; Xue, Chaowei

    2014-09-01

    This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, Voc and Jsc than the one on the seed layer without RTA treatment.

  14. Electrochemical characterisation of copper thin-film formation on polycrystalline platinum.

    PubMed

    Berkes, Balázs B; Henry, John B; Huang, Minghua; Bondarenko, Alexander S

    2012-09-17

    Electrochemically formed thin films are vital for a broad range of applications in virtually every field of modern science and technology. Understanding the film formation process could provide a means to aid the characterisation and control of film properties. Herein, we present a fundamental approach that combines two well-established analytical techniques (namely, electrochemical impedance spectroscopy and electrogravimetry) with a theoretical approach to provide physico-chemical information on the electrode/electrolyte interface during film formation. This approach allows the monitoring of local and overall surface kinetic parameters with time to enable an evaluation of the different modes of film formation. This monitoring is independent of surface area and surface concentrations of electroactive species and so may allow current computational methods to calculate these parameters and provide a deeper physical understanding of the electrodeposition of new bulk phases. The ability of this method to characterise 3D phase growth in situ in more detail than that obtained by conventional approaches is demonstrated through the study of a model system, namely, Cu bulk-phase deposition on a Pt electrode covered with a Cu atomic layer (Cu(ad)/Pt).

  15. Synergistic effects of water addition and step heating on the formation of solution-processed zinc tin oxide thin films: towards high-mobility polycrystalline transistors

    NASA Astrophysics Data System (ADS)

    Huang, Genmao; Duan, Lian; Zhao, Yunlong; Zhang, Yunge; Dong, Guifang; Zhang, Deqiang; Qiu, Yong

    2016-11-01

    Thin-film transistors (TFTs) with high mobility and good uniformity are attractive for next-generation flat panel displays. In this work, solution-processed polycrystalline zinc tin oxide (ZTO) thin film with well-ordered microstructure is prepared, thanks to the synergistic effect of water addition and step heating. The step heating treatment other than direct annealing induces crystallization, while adequate water added to precursor solution further facilitates alloying and densification process. The optimal polycrystalline ZTO film is free of hierarchical sublayers, and featured with an increased amount of ternary phases, as well as a decreased fraction of oxygen vacancies and hydroxides. TFT devices based on such an active layer exhibit a remarkable field-effect mobility of 52.5 cm2 V-1 s-1, a current on/off ratio of 2 × 105, a threshold voltage of 2.32 V, and a subthreshold swing of 0.36 V dec-1. Our work offers a facile method towards high-performance solution-processed polycrystalline metal oxide TFTs.

  16. Self-aligned metal double-gate junctionless p-channel low-temperature polycrystalline-germanium thin-film transistor with thin germanium film on glass substrate

    NASA Astrophysics Data System (ADS)

    Hara, Akito; Nishimura, Yuya; Ohsawa, Hiroki

    2017-03-01

    Low-temperature (LT) polycrystalline-germanium (poly-Ge) thin-film transistors (TFTs) are viable contenders for use in the backplanes of flat-panel displays and in systems-on-glass because of their superior electrical properties compared with silicon and oxide semiconductors. However, LT poly-Ge shows strong p-type characteristics. Therefore, it is not easy to reduce the leakage current using a single-gate structure such as a top-gate or bottom-gate structure. In this study, self-aligned planar metal double-gate p-channel junctionless LT poly-Ge TFTs are fabricated on a glass substrate using a 15-nm-thick solid-phase crystallized poly-Ge film and aluminum-induced lateral metallization source-drain regions (Al-LM-SD). A nominal field-effect mobility of 19 cm2 V-1 s-1 and an on/off ratio of 2 × 103 were obtained by optimizing the Al-LM-SD on a glass substrate through a simple, inexpensive LT process.

  17. Ion-Assisted Laser Deposition of Intermediate Layers for Yttrium BARIUM(2) COPPER(3) OXYGEN(7-DELTA) Thin Film Growth on Polycrystalline and Amorphous Substrates.

    NASA Astrophysics Data System (ADS)

    Reade, Ronald Paul

    The growth of YB_2Cu _3O_{7-delta} (YBCO) high-temperature superconductor thin films has largely been limited to deposition on single-crystal substrates to date. In order to expand the range of potential applications, growth on polycrystalline and amorphous substrates is desirable. In particular, the deposition of YBCO thin films with high critical current densities on polycrystalline metal alloys would allow the manufacture of superconducting tapes. However, it is shown that it is not possible to grow YBCO thin films directly on this type of substrate due to chemical and structural incompatibility. This work investigates the use of a yttria-stabilized zirconia (YSZ) intermediate layer to address this problem. An ion-assisted pulsed-laser deposition process is developed to provide control of orientation during the growth of the YSZ layers. The important properties of YBCO and YSZ are summarized and the status of research on thin film growth of these materials is reviewed. An overview of the pulsed-laser deposition (PLD) technique is presented. The use of ion -assisted deposition techniques to control thin film properties is discussed. Using an ion-assisted PLD process, the growth of (001) YSZ layers with controlled alignment of the in -plane crystal axes is achieved on polycrystalline metal and other polycrystalline and amorphous substrates. Studies of the important process parameters are presented. These layers are demonstrated to be appropriate for the subsequent deposition of c-axis YBCO thin films with alignment of the in-plane axes. A critical temperature of 92K and critical current densities (at 77K) of 6times 10^5 and 5times 10^4 A/cm ^2 without and with a 0.4T magnetic field, have been achieved. These critical current densities are higher than those demonstrated for competing technologies. The applicability of the developed technology is discussed. The control of film orientation using the ion-assisted PLD process is compared to the existing theory and

  18. A comparison of scattering and non-scattering anti-reflection designs for back contacted polycrystalline thin film silicon solar cells in superstrate configuration

    NASA Astrophysics Data System (ADS)

    Lockau, Daniel; Hammerschmidt, M.; Haschke, Jan; Blome, Mark; Ruske, F.; Schmidt, F.; Rech, B.

    2014-05-01

    A new generation of polycrystalline silicon thin film solar cells is currently being developed in laboratories, employing a combination of novel laser or electron beam based liquid phase crystallization (LPC) techniques and single side contacting systems. The lateral grain size of these polycrystalline cells is in the millimeter range at an absorber thickness of up to 10 μm. In this contribution we present a comparative simulation study of several 1D, 2D and 3D nano-optical designs for the substrate / illumination side interface to the several micrometer thick back contacted LPC silicon absorber material. The compared geometries comprise multilayer coatings, gratings with step and continuous profiles as well as combinations thereof. Using the transfer matrix method and a finite element method implementation to rigorously solve Maxwell's equations, we discuss anti-reflection and scattering properties of the different front interface designs in view of the angular distribution of incident light.

  19. Improvement in pH sensitivity of low-temperature polycrystalline-silicon thin-film transistor sensors using H2 sintering.

    PubMed

    Yen, Li-Chen; Tang, Ming-Tsyr; Chang, Fang-Yu; Pan, Tung-Ming; Chao, Tien-Sheng; Lee, Chiang-Hsuan

    2014-02-25

    In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H2 sintering process. The low-temperature polycrystalline-silicon (LTPS) TFT sensor with H2 sintering exhibited a high sensitivity than that without H2 sintering. This result may be due to the resulting increase in the number of Si-OH2(+) and Si-O(-) bonds due to the incorporation of H in the gate oxide to reduce the dangling silicon bonds and hence create the surface active sites and the resulting increase in the number of chemical reactions at these surface active sites. Moreover, the LTPS TFT sensor device not only offers low cost and a simple fabrication processes, but the technique also can be extended to integrate the sensor into other systems.

  20. Atomic-resolution characterization of the effects of CdCl{sub 2} treatment on poly-crystalline CdTe thin films

    SciTech Connect

    Paulauskas, T. Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Klie, R. F.

    2014-08-18

    Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl{sub 2} environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl{sub 2}, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

  1. Structural characterization and optical properties of Sol-gel-derived polycrystalline Pb(Zr0.35Ti0.65)O3 thin films

    NASA Astrophysics Data System (ADS)

    Zhang, Fan; Zhang, Rong Jun; Wang, Zi Yi; Zheng, Yu Xiang; Wang, Song You; Zhao, Hai Bin; Chen, Liang Yao; Liu, Xiao Bin; Jiang, An Quan

    2013-07-01

    Polycrystalline Pb(Zr0.35Ti0.65)O3 thin films prepared on Pt/Ti/SiO2/Si substrate by using solgel technique were characterized by using X-ray diffraction (XRD) and atomic force microscopy (AFM). The optical properties of the films were investigated by using spectroscopic ellipsometry (SE) with a four-phase optical model, air/roughness layer/PZT layer/Pt layer in the spectral range of 300-800 nm. The optical band gap of the films calculated following the Tauc's Law was smaller than that of an amorphous PZT thin film with some microcrystals existing on the surface. The result indicates that the quantum-size effect leads to an increase in band gap when the crystalline dimensions become very small.

  2. Quantitative analysis of the magnetic domain structure in polycrystalline La(0.7)Sr(0.3)MnO3 thin films by magnetic force microscopy.

    PubMed

    Li, Zhenghua; Wei, Fulin; Yoshimura, Satoru; Li, Guoqing; Asano, Hidefumi; Saito, Hitoshi

    2013-01-14

    The nanoscale magnetic domain structure of the polycrystalline La(0.7)Sr(0.3)MnO(3) granular thin films was imaged with a developed magnetic force microscopy technique by simultaneously detecting both the perpendicular and in-plane components of magnetic field gradients during the same scan of the tip oscillation. The characteristics of both the perpendicular and in-plane magnetic field gradient at the grain edges or the nonmagnetic grain boundary phase for LSMO films were demonstrated and can be used to evaluate the magnetic domain structure and magnetic isolation between neighboring grains. A two dimensional signal transformation algorithm to reconstruct the in-plane magnetization distribution of the polycrystalline LSMO thin films from the measured raw MFM images with the aid of the deconvolution technique was presented. The comparison between the experimental and simulated MFM images indicates that the magnetic grains or clusters are in the single domain (SD) or multi-domain (MD) state with the magnetic moments parallel or anti-parallel to the effective magnetic field of each grain, possibly due to the need for minimizing the total energy. The quantitative interpretation of the magnetic domain structure indicates that the large magnetoresistance in the studied LSMO films is mainly due to tunnel effect and scattering of conducted electrons at the nonmagnetic grain boundary phase related to the different configurations of magnetic domain states between neighboring grains.

  3. Strain evolution of each type of grains in poly-crystalline (Ba,Sr)TiO3 thin films grown by sputtering

    PubMed Central

    Park, Woo Young; Park, Min Hyuk; Lee, Jong Ho; Yoon, Jung Ho; Han, Jeong Hwan; Choi, Jung-Hae; Hwang, Cheol Seong

    2012-01-01

    The strain states of [111]-, [110]-, and [002]-oriented grains in poly-crystalline sputtered (Ba,Sr)TiO3 thin films on highly [111]-oriented Pt electrode/Si substrates were carefully examined by X-ray diffraction techniques. Remarkably, [002]-oriented grains respond more while [110]- and [111]-oriented grains do less than the theoretically estimated responses, which is understandable from the arrangement of the TiO6 octahedra with respect to the stress direction. Furthermore, such mechanical responses are completely independent of the degree of crystallization and film thickness. The transition growth temperature between the positive and negative strains was also different depending on the grain orientation. The unstrained lattice parameter for each type of grain was different suggesting that the oxygen vacancy concentration for each type of grain is different, too. The results reveal that polycrystalline (Ba,Sr)TiO3 thin films are not an aggregation of differently oriented grains which simply follow the mechanical behavior of single crystal with different orientations. PMID:23230505

  4. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

    SciTech Connect

    Wohlgemuth, J.; Narayanan, M.

    2006-07-01

    The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

  5. [Spectral analyzing effects of atmosphere states on the structure and characteristics of CdTe polycrystalline thin films made by close-spaced sublimation].

    PubMed

    Zheng, Hua-jing; Zheng, Jia-gui; Feng, Liang-huan; Zhang, Jing-quan; Xie, Er-qing

    2005-07-01

    The structure and characteristics of CdTe thin films are dependent on the working atmosphere states in close-spaced sublimation. In the present paper, CdTe polycrystalline thin films were deposited by CSS in mixture atmosphere of argon and oxygen. The physical mechanism of CSS was analyzed, and the temperature distribution in CSS system was measured. The dependence of preliminary nucleus creation on the atmosphere states (involving component and pressure) was studied. Transparencies were measured and optic energy gaps were calculated. The results show that: (1) The CdTe films deposited in different atmospheres are cubic structure. With increasing oxygen concentration, a increases and reaches the maximum at 6% oxygen concentration, then reduces, and increases again after passing the point at 12% oxygen concentration. Among them, the sample depositing at 9% oxygen concentration is the best. The optic energy gaps are 1.50-1.51 eV for all CdTe films. (2) The samples depositing at different pressures at 9% oxygen concentration are all cubical structure of CdTe, and the diffraction peaks of CdS and SnO2:F still appear. With the gas pressure increasing, the crystal size of CdTe minishes, the transparency of the thin film goes down, and the absorption side shifts to the short-wave direction. (3) The polycrystalline thin films with high quality deposit in 4 minutes under the depositing condition that the substrate temperature is 550 degrees C, and source temperature is 620 degrees C at 9% oxygen concentration.

  6. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

    NASA Astrophysics Data System (ADS)

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-04-01

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at -0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature.

  7. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

    PubMed Central

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-01-01

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at −0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature. PMID:27098115

  8. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.

    PubMed

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-04-21

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at -0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm(2)/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature.

  9. Evaluation on residual stress in Bi3.15(Eu0.7Nd0.15)Ti3O12 polycrystalline ferroelectric thin film by using the orientation average method

    NASA Astrophysics Data System (ADS)

    Wei, Y.; Cheng, H. B.; Wang, X. Y.; Zheng, X. J.

    2012-12-01

    We propose an orientation average method to evaluate residual stresses in polycrystalline thin films. Bi3.15(Eu0.7Nd0.15)Ti3O12 was used to verify our approach, with films prepared by metal organic decomposition at various annealing temperatures. The mechanical properties and microstructure were characterized by nanoindentation and X-ray diffraction. The thin film annealed at 600 °C has the largest residual compressive stress of 771 MPa among all thin films. The residual stresses are evaluated by the proposed method and traditional sin2ψ method, and the maximum distinction is less than 6.43%, demonstrating that the proposed method is reliable and convenient to evaluate residual stress in polycrystalline thin films.

  10. Controllability of self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors on a glass substrate

    NASA Astrophysics Data System (ADS)

    Ohsawa, Hiroki; Sasaki, Shun; Hara, Akito

    2016-03-01

    Self-aligned four-terminal n-channel (n-ch) and p-channel (p-ch) planar embedded metal double-gate polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at a low temperature of 550 °C. This device includes a metal top gate (TG) and a metal bottom gate (BG), which are used as the drive and control gates or vice versa. The BG was embedded in a glass substrate, and a poly-Si channel with large lateral grains was fabricated by continuous-wave laser lateral crystallization. The threshold voltage modulation factors under various control gate voltages (γ = ΔVth/ΔVCG) were nearly equal to the theoretical predictions in both the n- and p-ch TFTs. By exploiting this high controllability, an enhancement depletion (ED) inverter was fabricated, and successful operation at 2.0 V was confirmed.

  11. High-performance polycrystalline silicon thin-film transistors with two-dimensional location control of the grain boundary via excimer laser crystallization.

    PubMed

    Wang, Chao-Lung; Lee, I-Che; Wu, Chun-Yu; Liao, Chan-Yu; Cheng, Yu-Ting; Cheng, Huang-Chung

    2012-07-01

    High-performance low-temperature polycrystalline silicon (Poly-Si) thin-film transistors (TFTs) have been fabricated with two-dimensional (2-D) location-controlled grain boundaries using excimer laser crystallization (ELC). By locally increased thickness of the amorphous silicon (a-Si) film that was served as the seed crystals with a partial-melting crystallization scheme, the cross-shaped grain boundary structures were produced between the thicker a-Si grids. The Poly-Si TFTs with one parallel and one perpendicular grain boundary along the channel direction could therefore be fabricated to reach excellent field-effect mobility of 530 cm2/V-s while the conventional ones exhibited field-effect mobility of 198 cm2/V-s. Furthermore, the proposed TFTs achieved not only superior electric properties but also improved uniformity as compared with the conventional ones owing to the artificially controlled locations of grain boundaries.

  12. Charge retention characteristics of silicide-induced crystallized polycrystalline silicon floating gate thin-film transistors for active matrix organic light-emitting diode.

    PubMed

    Park, Jae Hyo; Son, Se Wan; Byun, Chang Woo; Kim, Hyung Yoon; Joo, So Na; Lee, Yong Woo; Yun, Seung Jae; Joo, Seung Ki

    2013-10-01

    In this work, non-volatile memory thin-film transistor (NVM-TFT) was fabricated by nickel silicide-induced laterally crystallized (SILC) polycrystalline silicon (poly-Si) as the active layer. The nickel seed silicide-induced crystallized (SIC) poly-Si was used as storage layer which is embedded in the gate insulator. The novel unit pixel of active matrix organic light-emitting diode (AMOLED) using NVM-TFT is proposed and investigated the electrical and optical performance. The threshold voltage shift showed 17.2 V and the high reliability of retention characteristic was demonstrated until 10 years. The retention time can modulate the recharge refresh time of the unit pixel of AMOLED up to 5000 sec.

  13. Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

    DOEpatents

    Findikoglu, Alp T.; Jia, Quanxi; Arendt, Paul N.; Matias, Vladimir; Choi, Woong

    2009-10-27

    A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

  14. Photovoltaic mechanisms in polycrystalline thin film silicon solar cells. Quarterly technical progress report No. 1, July 30-October 31, 1980

    SciTech Connect

    Sopori, B.

    1980-07-30

    Major accomplishments during the first quarter of the contract period are reported. Small area diode fabrication and analysis has been continued. This technique has further been applied to many RTR ribbons. An optical technique for determination of crystallite orientations has been placed in operation. This technique has many distinct advantages. These are: (1) rapid; (2) can be set-up very inexpensively; (3) well suited for polycrystalline substrates of small grain size; and (4) can easily characterize twins. Accuracies obtained with this technique are about the same as that of the Laue technique. A technique to qualitatively evaluate grain boundary activity in unprocessed substrates has been used and valuable results obtained. Further analysis is being done to use this technique for quantitative evaluation. A major study of G.B. orientation effects is underway. Initial results on RTR ribbons have shown a good correlation of G.B. barrier height with misorientation (tilt boundaries).

  15. Calculating Optical Absorption Spectra of Thin Polycrystalline Organic Films: Structural Disorder and Site-Dependent van der Waals Interaction

    PubMed Central

    2015-01-01

    We propose a new approach for calculating the change of the absorption spectrum of a molecule when moved from the gas phase to a crystalline morphology. The so-called gas-to-crystal shift Δm is mainly caused by dispersion effects and depends sensitively on the molecule’s specific position in the nanoscopic setting. Using an extended dipole approximation, we are able to divide Δm= −QWm in two factors, where Q depends only on the molecular species and accounts for all nonresonant electronic transitions contributing to the dispersion while Wm is a geometry factor expressing the site dependence of the shift in a given molecular structure. The ability of our approach to predict absorption spectra is demonstrated using the example of polycrystalline films of 3,4,9,10-perylenetetracarboxylic diimide (PTCDI). PMID:25834658

  16. Calculating Optical Absorption Spectra of Thin Polycrystalline Organic Films: Structural Disorder and Site-Dependent van der Waals Interaction.

    PubMed

    Megow, Jörg; Körzdörfer, Thomas; Renger, Thomas; Sparenberg, Mino; Blumstengel, Sylke; Henneberger, Fritz; May, Volkhard

    2015-03-12

    We propose a new approach for calculating the change of the absorption spectrum of a molecule when moved from the gas phase to a crystalline morphology. The so-called gas-to-crystal shift Δ[Formula: see text] m is mainly caused by dispersion effects and depends sensitively on the molecule's specific position in the nanoscopic setting. Using an extended dipole approximation, we are able to divide Δ[Formula: see text] m = -QWm in two factors, where Q depends only on the molecular species and accounts for all nonresonant electronic transitions contributing to the dispersion while Wm is a geometry factor expressing the site dependence of the shift in a given molecular structure. The ability of our approach to predict absorption spectra is demonstrated using the example of polycrystalline films of 3,4,9,10-perylenetetracarboxylic diimide (PTCDI).

  17. Temperature- and doping-concentration-dependent characteristics of junctionless gate-all-around polycrystalline-silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Tso, Chia-Tsung; Liu, Tung-Yu; Pan, Fu-Ming; Sheu, Jeng-Tzong

    2017-04-01

    The temperature effects of both gate-all-around polycrystalline silicon nanowire (GAA poly-Si NW) junctionless (JL) and inversion mode (IM) transistor devices at various temperatures (77–410 K) were investigated. The electrical characteristics of these devices, such as subthreshold swing (SS), threshold voltage (V th), and drain-induced barrier lowering (DIBL), were also characterized and compared in this study. Moreover, JL devices with different doping concentrations at various temperatures were also discussed. Both V th and I on showed significant doping concentration dependences for JL devices with doping concentrations of 1 × 1019 and 5 × 1019 cm‑3. However, the electrical characteristics of JL devices showed less thermal sensitivity when the doping concentration reached 1020 cm‑3.

  18. Polycrystalline ZnTe thin film on silicon synthesized by pulsed laser deposition and subsequent pulsed laser melting

    NASA Astrophysics Data System (ADS)

    Xu, Menglei; Gao, Kun; Wu, Jiada; Cai, Hua; Yuan, Ye; Prucnal, S.; Hübner, R.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

    2016-03-01

    ZnTe thin films on Si substrates have been prepared by pulsed laser deposition and subsequent pulsed laser melting (PLM) treatment. The crystallization during PLM is confirmed by Raman scattering, x-ray diffraction and room temperature photoluminescence (PL) measurements. The PL results show a broad peak at 574 nm (2.16 eV), which can be assigned to the transitions from the conduction band to the acceptor level located at 0.145 eV above the valence band induced by zinc-vacancy ionization. Our work provides an applicable approach to low temperature preparation of crystalline ZnTe thin films.

  19. Origins of electrostatic potential wells at dislocations in polycrystalline Cu(In,Ga)Se{sub 2} thin films

    SciTech Connect

    Dietrich, J.; Abou-Ras, D. Schmidt, S. S.; Rissom, T.; Unold, T.; Cojocaru-Mirédin, O.; Niermann, T.; Lehmann, M.; Koch, C. T.; Boit, C.

    2014-03-14

    Thin-film solar cells based on Cu(In,Ga)Se{sub 2} (CIGSe) reach high power-conversion efficiencies in spite of large dislocation densities of up to 10{sup 10}–10{sup 11} cm{sup −2}. The present work gives insight into the structural and compositional properties of dislocations in CIGSe thin films, which are embedded in a complete solar cell stack. These properties are related to the average electrical potential distributions obtained by means of inline electron holography. At a part of the dislocations studied, the average electrostatic potential shows local minima, all with depths of about −1.4 V. The measured average electrostatic potential distributions were modeled in order to reveal possible influences from strain fields, excess charge, and also compositional changes at the dislocation core. Cu depletion around the dislocation core, as evidenced by atom-probe tomography, explains best the measured potential wells. Their influences of the strain field around the dislocation core and of excess charge at the dislocation core are small. A structural model of dislocations in CIGSe thin films is provided which includes a Cu-depleted region around the dislocation core and gives a possible explanation for why decent photovoltaic performances are possible in the presence of rather large dislocation densities.

  20. Origins of electrostatic potential wells at dislocations in polycrystalline Cu(In,Ga)Se2 thin films

    NASA Astrophysics Data System (ADS)

    Dietrich, J.; Abou-Ras, D.; Schmidt, S. S.; Rissom, T.; Unold, T.; Cojocaru-Mirédin, O.; Niermann, T.; Lehmann, M.; Koch, C. T.; Boit, C.

    2014-03-01

    Thin-film solar cells based on Cu(In,Ga)Se2 (CIGSe) reach high power-conversion efficiencies in spite of large dislocation densities of up to 1010-1011 cm-2. The present work gives insight into the structural and compositional properties of dislocations in CIGSe thin films, which are embedded in a complete solar cell stack. These properties are related to the average electrical potential distributions obtained by means of inline electron holography. At a part of the dislocations studied, the average electrostatic potential shows local minima, all with depths of about -1.4 V. The measured average electrostatic potential distributions were modeled in order to reveal possible influences from strain fields, excess charge, and also compositional changes at the dislocation core. Cu depletion around the dislocation core, as evidenced by atom-probe tomography, explains best the measured potential wells. Their influences of the strain field around the dislocation core and of excess charge at the dislocation core are small. A structural model of dislocations in CIGSe thin films is provided which includes a Cu-depleted region around the dislocation core and gives a possible explanation for why decent photovoltaic performances are possible in the presence of rather large dislocation densities.

  1. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors.

    PubMed

    El-Mohri, Youcef; Antonuk, Larry E; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A; Lu, Jeng-Ping

    2009-07-01

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and/or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of approximately 10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in

  2. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors

    PubMed Central

    El-Mohri, Youcef; Antonuk, Larry E.; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A.; Lu, Jeng-Ping

    2009-01-01

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and∕or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of ∼10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical fill

  3. Effects of gate insulator using high pressure annealing on the characteristics of solid phase crystallized polycrystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Moojin; Jin, GuangHai

    2009-04-01

    The oxidizing ambient was built using high pressure H2O vapor at 550 °C. For the solid phase crystallization (SPC) polycrystalline silicon (poly-Si) that is annealed for 1 h at 2 MPa, the oxide thickness is about 150 Å. The oxide layer is approximately 90 Å above the original surface of the poly-Si and 60 Å below the original surface. The oxide layer is used as the first gate insulator layer of thin-film transistors (TFTs). The heating at 550 °C with 2 MPa H2O vapor increased the carrier mobility from 17.6 cm2/V s of the conventional SPC process to 30.4 cm2/V s, and it reduced the absolute value of the threshold voltage (Vth) from 4.13 to 3.62 V. The subthreshold swing also decreased from 0.72 to 0.60 V/decade. This improvement is attributed mainly to the reduction in defect density at the oxide/poly-Si interface and in the poly-Si film by the high pressure annealing (HPA) process. Since the realization of excellent performance at the oxide/poly-Si interface and in poly-Si depends on the defect density, the poly-Si having the thermal oxide formed by a combined process of SPC and HPA may be well suited for fabrication of poly-Si TFTs for flat panel displays such as active matrix organic light emitting diodes.

  4. Superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} thin films on polycrystalline ferrite for magnetically tunable microwave components

    SciTech Connect

    Jia, Q.X.; Findikoglu, A.T.; Arendt, P.; Foltyn, S.R.; Roper, J.M.; Groves, J.R.; Coulter, J.Y.; Li, Y.Q.; Dionne, G.F.

    1998-04-01

    Superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO) thin films with a surface resistance of 0.86 m{Omega} at 10 GHz and 76 K have been grown on polycrystalline ferrite yttrium iron garnet (YIG) substrates. The chemical and structural mismatches between YBCO and YIG are solved by using a double buffer layer of biaxially oriented yttria-stabilized zirconia (YSZ) and CeO{sub 2}, where YSZ is deposited by an ion-beam-assisted-deposition technique. The YBCO films are {ital c} axis oriented with an in-plane mosaic spread [full width at half maximum of an x-ray {phi}-scan on (103) reflection] of less than 8{degree}. The films have a superconductive transition temperature above 88 K with a transition width less than 0.3 K, giving a critical current density above 10{sup 6}A/cm{sup 2} in self field at 75 K. At 75 K in an external magnetic field of 1 T perpendicular to the film surface, the films maintain a critical current density over 2{times}10{sup 5}A/cm{sup 2}. {copyright} {ital 1998 American Institute of Physics.}

  5. Surface Engineering of Polycrystalline Silicon for Long-term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors.

    PubMed

    Chen, Bo-Wei; Chang, Ting-Chang; Hung, Yu-Ju; Huang, Shin-Ping; Chen, Hua-Mao; Liao, Po-Yung; Lin, Yu-Ho; Huang, Hui-Chun; Chiang, Hsiao-Cheng; Yang, Chung-I; Zheng, Yu-Zhe; Chu, Ann-Kuo; Li, Hung-Wei; Tsai, Chih-Hung; Lu, Hsueh-Hsing; Wang, Terry Tai-Jui; Chang, Tsu-Chiang

    2017-02-08

    Surface morphology in polycrystalline silicon (poly-Si) film is an issue regardless of whether conventional excimer laser annealing (ELA) or the newer metal-induced lateral crystallization (MILC) process is used. This paper investigates the stress distribution while undergoing long-term mechanical stress and the influence of stress on electrical characteristics. Our simulated results show that the non-uniform stress in the gate insulator is more pronounced near the polysilicon/gate insulator edge and at the two sides of the polysilicon protrusion. This stress results in defects in the gate insulator and leads to a non-uniform degradation phenomenon, which affects both the performance and reliability in thin-film transistors (TFTs). The degree of degradation is similar regardless of bending axis (channel-length axis, channel-width axis) or bending type (compression, tension), which means that the degradation is dominated by the protrusion effects. Furthermore, by utilizing long-term electrical bias stresses after undergoing long-tern bending stress, it is apparent that the carrier injection is severe in the sub-channel region, which confirms that the influence of protrusions is crucial. To eliminate the influence of surface morphology in poly-Si, three kinds of laser energy density were used during crystallization to control the protrusion height. The device with lowest protrusions demonstrates the smallest degradation after undergoing long-term bending.

  6. Abnormal Threshold Voltage Shifts in P-Channel Low-Temperature Polycrystalline Silicon Thin Film Transistors Under Negative Bias Temperature Stress.

    PubMed

    Kim, Sang Sub; Choi, Pyung Ho; Baek, Do Hyun; Lee, Jae Hyeong; Choi, Byoung Deog

    2015-10-01

    In this research, we have investigated the instability of P-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS TFTs) with double-layer SiO2/SiNx dielectrics. A negative gate bias temperature instability (NBTI) stress was applied and a turn-around behavior phenomenon was observed in the Threshold Voltage Shift (Vth). A positive threshold voltage shift occurs in the first stage, resulting from the negative charge trapping at the SiNx/SiO2 dielectric interface being dominant over the positive charge trapping at dielectric/Poly-Si interface. Following a stress time of 7000 s, the Vth switches to the negative voltage direction, which is "turn-around" behavior. In the second stage, the Vth moves from -1.63 V to -2 V, overwhelming the NBTI effect that results in the trapping of positive charges at the dielectric/Poly-Si interface states and generating grain-boundary trap states and oxide traps.

  7. Examination of a polycrystalline thin-film model to explore the relation between probe size and structural correlation length in fluctuation electron microscopy.

    PubMed

    Treacy, M M J; Gibson, J M

    2012-02-01

    We examine simulated electron microdiffraction patterns from models of thin polycrystalline silicon. The models are made by a Voronoi tessellation of random points in a box. The Voronoi domains are randomly selected to contain either a randomly-oriented cubic crystalline grain or a region of continuous random network material. The microdiffraction simulations from coherent probes of different widths are computed at the ideal kinematical limit, ignoring inelastic and multiple scattering. By examining the normalized intensity variance that is obtained in fluctuation electron microscopy experiments, we confirm that intensity fluctuations increase monotonically with the percentage of crystalline grains in the material. However, anomalously high variance is observed for models that have 100% crystalline grains with no imperfections. We confirm that the reduced normalized variance, V(k,R) - 1, that is associated with four-body correlations at scattering vector k, varies inversely with specimen thickness. Further, for probe sizes R larger than the mean grain size, we confirm that the reduced normalized variance obeys the predicted form given by Gibson et al. [Ultramicroscopy, 83, 169-178 (2000)] for the kinematical coherent scattering limit.

  8. Effect of growth parameters on the structure and magnetic properties of thin polycrystalline Fe films fabricated on Si<1 0 0> substrates

    NASA Astrophysics Data System (ADS)

    Javed, A.; Morley, N. A.; Gibbs, M. R. J.

    2011-04-01

    This paper deals with the experimental investigation of the structure and magnetic properties of thin polycrystalline Fe films. Two sets of 50 ± 2 nm thick Fe films were fabricated on Si<1 0 0> substrates with native oxides in place by varying (i) the sputter pressure pAr and (ii) the Fe sputter power PFe. X-ray diffraction (XRD) study revealed that all films grew with strong <1 1 0> texture normal to the film plane. No higher order peaks were observed in any of the films studied. For both film sets, the lattice constant (a) was less than the bulk Fe lattice constant (a0 = 2.866 Å), which suggested the existence of compressive strain in all films. Two regions of homogeneous strain were observed over the range of pAr studied. Magneto-optical Kerr effect (MOKE) measurements showed that all films exhibited magnetically isotropic behaviour. The magnetic properties were observed to be influenced strongly by pAr. The film grown at pAr = 4 μbar was the most softest (Hs = 100 ± 8 kA m-1, Mr/Ms = 0.87 ± 0.02) film among all the films studied. The magnetic properties were found to be independent of PFe. The effective saturation magnetostriction constant λeff determined (using the Villari method) was positive (4 ± 1 ppm) and observed to vary within the calculated error.

  9. Development of active matrix flat panel imagers incorporating thin layers of polycrystalline HgI(2) for mammographic x-ray imaging.

    PubMed

    Jiang, Hao; Zhao, Qihua; Antonuk, Larry E; El-Mohri, Youcef; Gupta, Tapan

    2013-02-07

    Active matrix flat-panel imagers (AMFPIs) offer many advantages and have become ubiquitous across a wide variety of medical x-ray imaging applications. However, for mammography, the imaging performance of conventional AMFPIs incorporating CsI:Tl scintillators or a-Se photoconductors is limited by their relatively modest signal-to-noise ratio (SNR), particularly at low x-ray exposures or high spatial resolution. One strategy for overcoming this limitation involves the use of a high gain photoconductor such as mercuric iodide (HgI(2)) which has the potential to improve the SNR by virtue of its low effective work function (W(EFF)). In this study, the performance of direct-detection AMFPI prototypes employing relatively thin layers of polycrystalline HgI(2) operated under mammographic irradiation conditions over a range of 0.5 to 16.0 mR is presented. High x-ray sensitivity (corresponding to W(EFF) values of ∼19 eV), low dark current (<0.1 pA mm(-2)) and good spatial resolution, largely limited by the size of the pixel pitch, were observed. For one prototype, a detective quantum efficiency of ∼70% was observed at an x-ray exposure of ∼0.5 mR at 26 kVp.

  10. Evaluation of Electrical Characteristics and Trap-State Density in Bottom-Gate Polycrystalline Thin Film Transistors Processed with High-Pressure Water Vapor Annealing

    NASA Astrophysics Data System (ADS)

    Kunii, Masafumi

    2006-02-01

    This paper discusses electrical characteristics and trap-state density in polycrystalline silicon (poly-Si) used in bottom-gate poly-Si thin film transistors (TFTs) processed with high-pressure water vapor annealing (HWA). The threshold voltage uniformity of the HWA-processed TFTs is improved by 42% for N-channel and 38% for P-channel TFTs in terms of standard deviation, and carrier mobility is enhanced by 10% or greater for both N- and P-channel TFTs than those TFTs processed conventionally. Subthreshold swing is also improved by HWA, showing that HWA postannealing is effective for improving the Si/SiO2 interface of the bottom-gate TFTs. Two types of TFTs having different poly-Si crystallinities are examined to investigate carrier transport in poly-Si processed by HWA postannealing. The evaluation of trap-state density for the two types of poly-Si reveals that HWA postannealing is more efficient for N-channel than for P-channel TFTs. Furthermore, HWA postannealing is more effective for poly-Si with high crystallinity to improve TFT characteristics. The analysis of the trap-state distributions and the activation energy of TFT drain current indicate that HWA deactivates dangling bonds highly localized at poly-Si grain boundaries (GBs). Thus, HWA postannealing effects can be interpreted by a GB barrier potential model similar to that applied to conventional hydrogenation.

  11. Preparation of translucent Gd2Si2O7:Ce polycrystalline thin plates and their scintillation performance for α-particles

    NASA Astrophysics Data System (ADS)

    Nishikata, Mami; Ueda, Aki; Higuchi, Mikio; Kaneko, Junichi H.; Tsubota, Youichi; Ishibashi, Hiroyuki

    2015-07-01

    Translucent Gd2Si2O7:Ce (GPS:Ce) polycrystalline plates were prepared via liquid-phase sintering using SiO2 as a self-flux, and their scintillation performances for α-particles were investigated. Dense sintered compacts comprising large grains, some of which were larger than 100 μm in diameter, were successfully prepared by sintering at 1690 °C for 100 h. The best result was obtained with the powder comprising only <40 μm particles. Any combination of powders of <40 μm and <15 μm resulted in inhomogeneous structures with smaller grains of about 50 μm. A translucent GPS:Ce thin plate was fabricated by grinding the sintered compact that contained excess SiO2 of 8 mol%. Since the plate was composed of large grains, scattering at the grain boundaries was effectively suppressed and many of the grains virtually act as single crystals when the plate thickness was less than 100 μm. Therefore, the decrease in the plate thickness brought increase in the total transmission, and light yield and energy resolution were consequently improved. When the plate thickness was 50 μm, light yield was 82% as compared with that of a GPS:Ce single crystal as a reference, and energy resolution attained to 13%.

  12. Chemical speciation at buried interfaces in high-temperature processed polycrystalline silicon thin-film solar cells on ZnO:Al

    NASA Astrophysics Data System (ADS)

    Becker, Christiane; Pagels, Marcel; Zachäus, Carolin; Pollakowski, Beatrix; Beckhoff, Burkhard; Kanngießer, Birgit; Rech, Bernd

    2013-01-01

    The combination of polycrystalline silicon (poly-Si) thin films with aluminum doped zinc oxide layers (ZnO:Al) as transparent conductive oxide enables the design of appealing optoelectronic devices at low costs, namely in the field of photovoltaics. The fabrication of both thin-film materials requires high-temperature treatments, which are highly desired for obtaining a high electrical material quality. Annealing procedures are typically applied during crystallization and defect-healing processes for silicon and can boost the carrier mobility and conductivity of ZnO:Al layers. In a combined poly-Si/ZnO:Al layer system, an in-depth knowledge of the interaction of both layers and the control of interface reactions upon thermal treatments is crucial. Therefore, we analyze the influence of rapid thermal treatments up to 1050 °C on solid phase crystallized poly-Si thin-film solar cells on ZnO:Al-coated glass, focusing on chemical interface reactions and modifications of the poly-Si absorber material quality. The presence of a ZnO:Al layer in the solar cell stack was found to limit the poly-Si solar cell performance with open circuit voltages only below 390 mV (compared to 435 mV without ZnO film), even if a silicon nitride (SiN) diffusion barrier was included. A considerable amount of diffused zinc inside the silicon was observed. By grazing-incidence X-ray fluorescence spectrometry, a depth-resolving analysis of the elemental composition close to the poly-Si/(SiN)/ZnO:Al interface was carried out. Temperatures above 1000 °C were found to promote the formation of new chemical compounds within about 10 nm of interface, such as zinc silicates (Zn2SiO4) and aluminium oxide (AlxOy). These results give valuable insights about the temperature-limitations of Si/ZnO thin-film solar cell fabrication and the formation of high-mobility ZnO-layers by thermal anneal.

  13. Exploration of maximum count rate capabilities for large-area photon counting arrays based on polycrystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua

    2016-03-01

    Pixelated photon counting detectors with energy discrimination capabilities are of increasing clinical interest for x-ray imaging. Such detectors, presently in clinical use for mammography and under development for breast tomosynthesis and spectral CT, usually employ in-pixel circuits based on crystalline silicon - a semiconductor material that is generally not well-suited for economic manufacture of large-area devices. One interesting alternative semiconductor is polycrystalline silicon (poly-Si), a thin-film technology capable of creating very large-area, monolithic devices. Similar to crystalline silicon, poly-Si allows implementation of the type of fast, complex, in-pixel circuitry required for photon counting - operating at processing speeds that are not possible with amorphous silicon (the material currently used for large-area, active matrix, flat-panel imagers). The pixel circuits of two-dimensional photon counting arrays are generally comprised of four stages: amplifier, comparator, clock generator and counter. The analog front-end (in particular, the amplifier) strongly influences performance and is therefore of interest to study. In this paper, the relationship between incident and output count rate of the analog front-end is explored under diagnostic imaging conditions for a promising poly-Si based design. The input to the amplifier is modeled in the time domain assuming a realistic input x-ray spectrum. Simulations of circuits based on poly-Si thin-film transistors are used to determine the resulting output count rate as a function of input count rate, energy discrimination threshold and operating conditions.

  14. Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

    SciTech Connect

    Yun, J. Varalmov, S.; Huang, J.; Green, M. A.; Kim, K.

    2014-06-16

    The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-μm thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550 °C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450 °C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550 °C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450 °C, which limits the solar cell performance by n = 2 recombination, and a performance degradation is expected due to severe shunting.

  15. In-situ investigation of thermal instabilities and solid state dewetting in polycrystalline platinum thin films via confocal laser microscopy

    SciTech Connect

    Jahangir, S.; Cheng, Xuan; Huang, H. H.; Nagarajan, V.; Ihlefeld, J.

    2014-10-28

    Solid state dewetting and the subsequent morphological changes for platinum thin films grown on zinc oxide (ZnO) buffered (001) silicon substrates (Pt/ZnO/SiO{sub 2}/(001)Si system) is investigated under vacuum conditions via a custom-designed confocal laser microscope coupled with a laser heating system. Live imaging of thin film dewetting under a range of heating and quenching vacuum ambients reveals events including hillock formation, hole formation, and hole growth that lead to formation of a network of Pt ligaments, break up of Pt ligaments to individual islands and subsequent Pt islands shape reformation, in chronological fashion. These findings are corroborated by ex-situ materials characterization and quantitative electron microscopy analysis. A secondary hole formation via blistering before film rupture is revealed to be the critical stage, after which a rapid dewetting catastrophe occurs. This process is instantaneous and cannot be captured by ex-situ methods. Finally, an intermetallic phase forms at 900 °C and alters the morphology of Pt islands, suggesting a practical limit to the thermal environments that may be used for these platinized silicon wafers in vacuum conditions.

  16. The effect of Ta doping in polycrystalline TiO{sub x} and the associated thin film transistor properties

    SciTech Connect

    Ok, Kyung-Chul Park, Yoseb Park, Jin-Seong E-mail: jsparklime@hanyang.ac.kr; Chung, Kwun-Bum E-mail: jsparklime@hanyang.ac.kr

    2013-11-18

    Tantalum (Ta) is suggested to act as an electron donor and crystal phase stabilizer in titanium oxide (TiO{sub x}). A transition occurs from an amorphous state to a crystalline phase at an annealing temperature above 300 °C in a vacuum ambient. As the annealing temperature increases from 300 °C to 450 °C, the mobility increases drastically from 0.07 cm{sup 2}/Vs to 0.61 cm{sup 2}/Vs. The remarkable enhancement of thin film transistor performance is suggested to be due to the splitting of Ti 3d band orbitals as well as the increase in Ta{sup 5+} ions that can act as electron donors.

  17. Symmetry dependent optoelectronic properties of grain boundaries in polycrystalline Cu(In,Ga)Se{sub 2} thin films

    SciTech Connect

    Müller, Mathias; Bertram, Frank; Christen, Jürgen; Abou-Ras, Daniel Rissom, Thorsten

    2014-01-14

    In a correlative study applying electron backscatter diffraction as well as spatially and spectrally resolved cathodoluminescence spectroscopy at low temperatures of about 5 K, the symmetry-dependent optoelectronic properties of grain boundaries in Cu(In,Ga)Se{sub 2} thin films have been investigated. We find that grain boundaries with lower symmetries tend to show a distinct spectral red shift of about 10 meV and a weak influence on the emission intensity. These behaviors are not detected at high-symmetry Σ3 grain boundaries, or at least in a strongly reduced way. The investigations in the present work help to clarify the ambivalent properties reported for grain boundaries in Cu(In,Ga)Se{sub 2}.

  18. Hysteresis in single and polycrystalline iron thin films: Major and minor loops, first order reversal curves, and Preisach modeling

    NASA Astrophysics Data System (ADS)

    Cao, Yue; Xu, Ke; Jiang, Weilin; Droubay, Timothy; Ramuhalli, Pradeep; Edwards, Danny; Johnson, Bradley R.; McCloy, John

    2015-12-01

    Hysteretic behavior was studied in a series of Fe thin films, grown by molecular beam epitaxy, having different grain sizes and grown on different substrates. Major and minor loops and first order reversal curves (FORCs) were collected to investigate magnetization mechanisms and domain behavior under different magnetic histories. The minor loop coefficient and major loop coercivity increase with decreasing grain size due to higher defect concentration resisting domain wall movement. First order reversal curves allowed estimation of the contribution of irreversible and reversible susceptibilities and switching field distribution. The differences in shape of the major loops and first order reversal curves are described using a classical Preisach model with distributions of hysterons of different switching fields, providing a powerful visualization tool to help understand the magnetization switching behavior of Fe films as manifested in various experimental magnetization measurements.

  19. Surface Modification of Polycrystalline Cu(In,Ga)Se2 Thin-Film Solar Cell Absorber Surfaces for PEEM Measurements

    SciTech Connect

    Wilks, R. G.; Contreras, M. A.; Lehmann, S.; Herrero-Albillos, J.; Bismaths, L. T.; Kronast, F.; Noufi, R.; Bar, M.

    2011-01-01

    We present a thorough examination of the {micro}m-scale topography of Cu(In, Ga)Se{sub 2} ('CIGSe') thin-film solar cell absorbers using different microscopy techniques. We specifically focus on the efficacy of preparing smooth sample surfaces - by etching in aqueous bromine solution - for a spatially resolved study of their chemical and electronic structures using photoelectron emission microscopy (PEEM). The etching procedure is shown to reduce the CIGSe surface roughness from ca. 40 to 25 nm after 40s etching, resulting in an increase in the quality of the obtained PEEM images. Furthermore we find that the average observed grain size at the etched surfaces appears larger than at the unetched surfaces. Using a liftoff procedure, it is additionally shown that the backside of the absorber is flat but finely patterned, likely due to being grown on the finely-structured Mo back contact.

  20. Ion-assisted laser deposition of intermediate layers for YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin film growth on polycrystalline and amorphous substrates

    SciTech Connect

    Reade, R.P.

    1993-11-01

    The growth of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) high-temperature superconductor thin films has largely been limited to deposition on single-crystal substrates to date. In order to expand the range of potential applications, growth on polycrystalline and amorphous substrates is desirable. In particular, the deposition of YBCO thin films with high critical current densities on polycrystalline metal alloys would allow the manufacture of superconducting tapes. However, it is shown that it is not possible to grow YBCO thin films directly on this type of substrate due to chemical and structural incompatibility. This work investigates the use of a yttria-stabilized zirconia (YSZ) intermediate layer to address this problem. An ion-assisted pulsed-laser deposition process is developed to provide control of orientation during the growth of the YSZ layers. The important properties of YBCO and YSZ are summarized and the status of research on thin film growth of these materials is reviewed. An overview of the pulsed-laser deposition (PLD) technique is presented. The use of ion-assisted deposition techniques to control thin film properties is discussed.

  1. Optoelectronic characterization of wide-bandgap (AgCu)(InGa)Se 2 thin-film polycrystalline solar cells including the role of the intrinsic zinc oxide layer

    NASA Astrophysics Data System (ADS)

    Obahiagbon, Uwadiae

    Experiments and simulations were conducted to vary the thickness and the sheet resistance of the high resistance (HR) ZnO layer in polycrystalline thin film (AgCu)(GaIn)Se2 (ACIGS) solar cells. The effect of varying these parameters on the electric field distribution, depletion width and hence capacitance were studied by SCAPS simulation. Devices were then fabricated and characterized by a number of optoelectronic techniques. Thin film CIGS has received a lot of attention, for its use as an absorber layer for thin film solar cells. However, the addition of Silver (Ag) to the CIGS alloy system increases the band gap as indicated from optical transmission measurements and thus higher open circuit voltage (Voc) could be obtained. Furthermore, addition of Ag lowers the melting temperature of the alloy and it is expected that this lowers the defect densities in the absorber and thus leads to higher performance. Transient photocapacitance analysis on ACIGS devices shows sharper band edge indicating lower disorder than CIGS. Presently there is a lack of fundamental knowledge relating film characteristics to device properties and performance. This is due to the fact that some features in the present solar cell structure have been optimized empirically. The goal of this research effort was to develop a fundamental and detailed understanding of the device operation as well as the loss mechanism(s) limiting these devices. Recombination mechanisms in finished ACIGS solar cell devices was studied using advanced admittance techniques (AS, DLCP, CV) to identify electronically active defect state(s) and to study their impact on electronic properties and device performance. Analysis of various optoelectronic measurements of ACIGS solar cells provided useful feedback regarding the impact on device performance of the HR ZnO layer. It was found that thickness between 10-100 nm had negligible impact on performance but reducing the thickness to 0 nm resulted in huge variability in all

  2. Measurement of Transient Tool Internal Temperature Fields by Novel Micro Thin Film Sensors Embedded in Polycrystalline Cubic Boron Nitride Cutting Inserts

    NASA Astrophysics Data System (ADS)

    Werschmoeller, Dirk

    Monitoring and control of thermomechanical phenomena in tooling are imperative for advancing fundamental understanding, enhancing reliability, and improving workpiece quality in material removal processes. Polycrystalline cubic boron nitride (PCBN) tools are being used heavily in numerous machining processes, e.g., machining of hardened low carbon steel and superalloys. These processes are very sensitive to variations in local cutting conditions at, or close to, the tool-workpiece interface, but lack a thorough understanding of fundamental transient thermo-mechanical phenomena present. As a result, abrupt catastrophic tool failures and degraded machined surfaces frequently occur. Existing sensors are not suitable for process control and monitoring, as they are either destructively embedded and/or do not possess the necessary spatial and temporal resolution to provide relevant data during machining. This research presents a novel approach for obtaining thermomechanical data from the close vicinity (i.e., 10s of micrometers) of the tool-workpiece interface. Arrays of micro thin film thermocouples with junction size 5 x 5 mum were fabricated by standard microfabrication methods and have been successfully embedded into PCBN using diffusion bonding. Electron microscopy and X-ray spectroscopy were employed to examine material interactions at the bonding interface and to determine optimal bonding parameters. Static and dynamic sensor performances have been characterized. The sensors exhibit excellent linearity up to 1300 °C, fast rise time of 150 ns, and possess good sensitivity. The inserts instrumented with embedded thin film C-type thermocouples were successfully applied to measure internal tool temperatures as close as 70 mum to the cutting edge while machining aluminum and hardened steel workpieces at industrially relevant cutting parameters. Acquired temperature data follow theoretical trends very well. Correlations between temperature and cutting parameters have

  3. The structural, optical, and electrical properties of vacuum evaporated Cu-doped ZnTe polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Feng, L.; Mao, D.; Tang, J.; Collins, R. T.; Trefny, J. U.

    1996-09-01

    We have studied the structural, optical, and electrical properties of thermally evaporated, Cu-doped, ZnTe thin films as a function of Cu concentration and post-deposition annealing temperature. X-ray diffraction measurements showed that the ZnTe films evaporated on room temperature substrates were characterized by an average grain size of 300Å with a (111) preferred orientation. Optical absorption measurements yielded a bandgap of 2.21 eV for undoped ZnTe. A bandgap shrinkage was observed for the Cu-doped films. The dark resistivity of the as-deposited ZnTe decreased by more than three orders of magnitude as the Cu concentration was increased from 4 to 8 at.% and decreased to less than 1 ohm-cm after annealing at 260°C. For films doped with 6 7 at.% Cu, an increase of resistivity was also observed during annealing at 150 200°C. The activation energy of the dark conductivity was measured as a function of Cu concentration and annealing temperature. Hall measurements yielded hole mobility values in the range between 0.1 and 1 cm2/V·s for both as-deposited and annealed films. Solar cells with a CdS/CdTe/ZnTe/metal structure were fabricated using Cudoped ZnTe as a back contact layer on electrodeposited CdTe. Fill factors approaching 0.75 and energy conversion efficiencies as high as 12.1% were obtained.

  4. Photoinduced current transient spectroscopy technique applied to the study of point defects in polycrystalline CdS thin films

    NASA Astrophysics Data System (ADS)

    El Akkad, Fikry; Ashour, Habib

    2009-05-01

    CdS thin films of variable thickness (between 160 and 1200 nm) were prepared using rf magnetron sputtering. X-ray diffraction measurements showed that the films have hexagonal structure and that the crystallites are preferentially oriented with the ⟨002⟩ axis perpendicular to the substrate surface. The results of electrical conductivity measurements as a function of film thickness and of temperature provide evidence that the conductivity is controlled by a thermally activated mobility in the presence of an intergrain barrier. The room temperature barrier height ϕ decreases with the increase in film thickness. Values of ϕ between 0 and 0.25 eV were determined. Photoinduced current transient spectroscopy performed on five samples having different thicknesses showed the presence of 11 traps with activation energies in the range 0.08-1.06 eV; deeper traps being observed on thinner films. By comparison with literature results, seven traps are attributed to native defects and foreign impurities (mainly Cu, Au, and Ag). Four other traps, not previously observed, are attributed to residual defects. The observation that deeper traps are detected in samples with larger barrier heights has been discussed and interpreted in terms of the energy band profile near the grain boundary.

  5. Polycrystalline semiconductor processing

    DOEpatents

    Glaeser, Andreas M.; Haggerty, John S.; Danforth, Stephen C.

    1983-01-01

    A process for forming large-grain polycrystalline films from amorphous films for use as photovoltaic devices. The process operates on the amorphous film and uses the driving force inherent to the transition from the amorphous state to the crystalline state as the force which drives the grain growth process. The resultant polycrystalline film is characterized by a grain size that is greater than the thickness of the film. A thin amorphous film is deposited on a substrate. The formation of a plurality of crystalline embryos is induced in the amorphous film at predetermined spaced apart locations and nucleation is inhibited elsewhere in the film. The crystalline embryos are caused to grow in the amorphous film, without further nucleation occurring in the film, until the growth of the embryos is halted by imgingement on adjacently growing embryos. The process is applicable to both batch and continuous processing techniques. In either type of process, the thin amorphous film is sequentially doped with p and n type dopants. Doping is effected either before or after the formation and growth of the crystalline embryos in the amorphous film, or during a continuously proceeding crystallization step.

  6. Polycrystalline semiconductor processing

    DOEpatents

    Glaeser, A.M.; Haggerty, J.S.; Danforth, S.C.

    1983-04-05

    A process is described for forming large-grain polycrystalline films from amorphous films for use as photovoltaic devices. The process operates on the amorphous film and uses the driving force inherent to the transition from the amorphous state to the crystalline state as the force which drives the grain growth process. The resultant polycrystalline film is characterized by a grain size that is greater than the thickness of the film. A thin amorphous film is deposited on a substrate. The formation of a plurality of crystalline embryos is induced in the amorphous film at predetermined spaced apart locations and nucleation is inhibited elsewhere in the film. The crystalline embryos are caused to grow in the amorphous film, without further nucleation occurring in the film, until the growth of the embryos is halted by impingement on adjacently growing embryos. The process is applicable to both batch and continuous processing techniques. In either type of process, the thin amorphous film is sequentially doped with p and n type dopants. Doping is effected either before or after the formation and growth of the crystalline embryos in the amorphous film, or during a continuously proceeding crystallization step. 10 figs.

  7. Combinatorial investigation of the effects of sodium on Cu 2ZnSnSe4 polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Gibbs, Alex Hilton

    Cu2ZnSnSe4 (CZTSe) possess highly suitable optical and electronic properties for use as an absorber layer in thin film solar cells. CZTSe also has potential to achieve terawatt level solar energy production due to its inexpensive and abundant material constituents. Currently, fabricating CZTSe devices with the expected theoretical performance has not been achieved, making the growth and formation of CZTSe an interesting topic of research. In this work, a two-step vacuum fabrication process consisting of RF co-sputtering followed by reactive annealing was explored as a viable technique for synthesizing CZTSe thin films. Furthermore, the enhancement of the fabrication process by the incorporation of sodium during annealing was studied using a combinatorial approach. Film composition was analyzed using electron dispersive spectroscopy. Structure, phase morphology, and formation were determined using scanning electron microscopy, x-ray diffraction, atomic force microscopy and raman spectroscopy. Optical and electronic properties were characterized using UV-Vis and Voc were measurements under a one sun solar simulator. RF co-sputtering CuSe, ZnSe, and SnSe precursors produced films with good thickness uniformity, adhesion and stoichiometry control over 3 x 3 in 2 substrates. Composition measurements showed that the precursor films maintained stability during an annealing process of 580° C for 20 minutes producing near stoichiometric CZTSe. However, grain size was small with an average diameter of 350 nm. The CZTSe film produced by this process exhibited a suitable absorption coefficient of > 104 cm-1 and aband gap near 1.0 eV. The film also produced an XRD pattern consistent with tetragonal CZTSe with no secondary phase formation with the exception of approximately 12.5 nm of interfacial MoSe2 formation at the back contact. The combinatorial investigation of the influence of sodium on CZTSe growth and morphology was achieved using a custom built constant withdraw

  8. Self-consistent modelling of X-ray photoelectron spectra from air-exposed polycrystalline TiN thin films

    NASA Astrophysics Data System (ADS)

    Greczynski, G.; Hultman, L.

    2016-11-01

    We present first self-consistent modelling of x-ray photoelectron spectroscopy (XPS) Ti 2p, N 1s, O 1s, and C 1s core level spectra with a cross-peak quantitative agreement for a series of TiN thin films grown by dc magnetron sputtering and oxidized to different extent by varying the venting temperature Tv of the vacuum chamber before removing the deposited samples. So-obtained film series constitute a model case for XPS application studies, where certain degree of atmosphere exposure during sample transfer to the XPS instrument is unavoidable. The challenge is to extract information about surface chemistry without invoking destructive pre-cleaning with noble gas ions. All TiN surfaces are thus analyzed in the as-received state by XPS using monochromatic Al Kα radiation (hν = 1486.6 eV). Details of line shapes and relative peak areas obtained from deconvolution of the reference Ti 2p and N 1 s spectra representative of a native TiN surface serve as an input to model complex core level signals from air-exposed surfaces, where contributions from oxides and oxynitrides make the task very challenging considering the influence of the whole deposition process at hand. The essential part of the presented approach is that the deconvolution process is not only guided by the comparison to the reference binding energy values that often show large spread, but in order to increase reliability of the extracted chemical information the requirement for both qualitative and quantitative self-consistency between component peaks belonging to the same chemical species is imposed across all core-level spectra (including often neglected O 1s and C 1s signals). The relative ratios between contributions from different chemical species vary as a function of Tv presenting a self-consistency check for our model. We propose that the cross-peak self-consistency should be a prerequisite for reliable XPS peak modelling as it enhances credibility of obtained chemical information, while relying

  9. High Mobility Exceeding 80 cm2 V-1 s-1 in Polycrystalline Ta-Doped SnO2 Thin Films on Glass Using Anatase TiO2 Seed Layers

    NASA Astrophysics Data System (ADS)

    Nakao, Shoichiro; Yamada, Naoomi; Hitosugi, Taro; Hirose, Yasushi; Shimada, Toshihiro; Hasegawa, Tetsuya

    2010-03-01

    High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than two times increase in mobility, compared to films grown directly on the glass substrates. The highest mobility obtained was 83 cm2 V-1 s-1 with a resistivity of 2.8×10-4 Ω cm, whereas the film with the lowest resistivity of 1.8×10-4 Ω cm had a mobility of 60 cm2 V-1 s-1.

  10. Uniaxially oriented polycrystalline thin films and air-stable n-type transistors based on donor-acceptor semiconductor (diC8BTBT)(FnTCNQ) [n = 0, 2, 4

    NASA Astrophysics Data System (ADS)

    Shibata, Yosei; Tsutsumi, Jun'ya; Matsuoka, Satoshi; Matsubara, Koji; Yoshida, Yuji; Chikamatsu, Masayuki; Hasegawa, Tatsuo

    2015-04-01

    We report the fabrication of high quality thin films for semiconducting organic donor-acceptor charge-transfer (CT) compounds, (diC8BTBT)(FnTCNQ) (diC8BTBT = 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene and FnTCNQ [n = 0,2,4] = fluorinated derivatives of 7,7,8,8,-tetracyanoquinodimethane), which have a high degree of layered crystallinity. Single-phase and uniaxially oriented polycrystalline thin films of the compounds were obtained by co-evaporation of the component donor and acceptor molecules. Organic thin-film transistors (OTFTs) fabricated with the compound films exhibited n-type field-effect characteristics, showing a mobility of 6.9 × 10-2 cm2/V s, an on/off ratio of 106, a sub-threshold swing of 0.8 V/dec, and an excellent stability in air. We discuss the suitability of strong intermolecular donor-acceptor interaction and the narrow CT gap nature in compounds for stable n-type OTFT operation.

  11. Surface modification of grains with silver nano-clusters: a new route to great enhancement of photoluminescence in Eu³⁺-doped ferroelectric polycrystalline oxide thin films.

    PubMed

    Su, Li; Qin, Ni; Sa, Tongliang; Bao, Dinghua

    2013-12-02

    We report on a new route to greatly enhance the photoluminescence of Eu³⁺ doped ferroelectric polycrystalline oxide thin films: surface modification of grains with silver nanoclusters (NCs). The Ag doped Bi₃.₆Eu₀.₄Ti₃O₁₂ (BET) thin films were prepared by a chemical solution deposition method. According to the XRD, TEM and XPS analysis, partially oxidated Ag NCs have been formed on the surfaces of the BET grains. A greatly enhanced photoluminescence was obtained in a wide range of Ag doping level. Role of the Ag NCs in the photoluminescence enhancement was investigated by means of absorption, emission and excitation spectra, as well as decay lifetime measurement. The results indicate that the intra-4f transition of Eu³⁺ can be intensively activated by the coupling of the charge transfer band of BET with the ⁵D₀ state of Eu³⁺ ions, and the enhancement of Eu³⁺ ions emission in the present thin films was attributed to the surface modification of BET crystalline grains by Ag NCs. In addition, the influences of Ag NCs on the dielectric and ferroelectric properties of these materials were discussed as well.

  12. Polishing of polycrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Harker, Alan B.; Flintoff, John F.; DeNatale, Jeffrey F.

    1990-12-01

    Optically smooth surfaces can be produced on initially rough polycrystalline diamond film through the combined use of reactive ion etching and high temperature lapping on Fe metai Protective thin film barriers are first applied to the diamond surface to restrict the reactiv oxygen or hydrogen ion etching process to regions of greatest roughness. When the overaJ surface roughness has been reduced sufficiently by etching mechanical lapping of the surfac on an Fe plate at temperatures of 730C-900C in the presence of hydrogen can be used t produce surface roughnesses of less than 10 nm as measured by profilimetry. The tw techniques are complementary for flat surfaces while the reactive etching process alone can b used with shaped substrates to produce a surface finish suitable for LWIR optical applications. 1.

  13. Research on polycrystalline thin-film CuInGaSe{sub 2} solar cells. Annual subcontract report, 3 May 1991--21 May 1993

    SciTech Connect

    Chen, W.S.; Stewart, J.M.; Mickelsen, R.A.; Devaney, W.E.; Stanbery, B.J.

    1993-10-01

    This report describes work to fabricate high-efficiency CdZnS/CuInGaSe{sub 2}, thin-film solar cells and to develop improved transparent conductor window layers such as ZnO. The specific technical milestone for Phase I was to demonstrate an air mass (AM) 1.5 global 13% , 1-cm{sup 2} total-area CuInGaSe{sub 2} (CIGS) thin-film solar cell. For Phase II, the objective was to demonstrate an AM1.5 global 13.5%, 1-cm{sup 2} total-area efficiency. We focused our activities on three areas. First, we modified the CIGS deposition system to double its substrate capacity. Second, we developed new tooling to enable investigation of a modified aqueous CdZnS process in which the goal was to improve the yield of this critical step in the device fabrication process. Third, we upgraded the ZnO sputtering system to improve its reliability and reproducibility. A dual rotatable cathode metallic source was installed, and the sputtering parameters were further optimized to improve ZnO`s properties as a transparent conducting oxide (TCO). Combining the refined CdZnS process with CIGS from the newly fixtured deposition system enable us to fabricate and deliver a ZnO/Cd{sub 0.08}Zn{sub 0.20}S/CuIn{sub 0.74}Ga{sub 0.26}Se{sub 2} cell on alumina with I-V characteristics, as measured by NREL under standard test conditions, of 13.7% efficiency with V{proportional_to} = 0.5458 V, J{sub sc} = 35.48 mA/cm{sup 2}, FF = 0.688, and efficiency = 14.6%.

  14. Recrystallization of polycrystalline silicon

    NASA Technical Reports Server (NTRS)

    Lall, C.; Kulkarni, S. B.; Graham, C. D., Jr.; Pope, D. P.

    1981-01-01

    Optical metallography is used to investigate the recrystallization properties of polycrystalline semiconductor-grade silicon. It is found that polycrystalline silicon recrystallizes at 1380 C in relatively short times, provided that the prior deformation is greater than 30%. For a prior deformation of about 40%, the recrystallization process is essentially complete in about 30 minutes. Silicon recrystallizes at a substantially slower rate than metals at equivalent homologous temperatures. The recrystallized grain size is insensitive to the amount of prestrain for strains in the range of 10-50%.

  15. Research on polycrystalline thin-film submodules based on CuInSe{sub 2} materials. Final technical report, 14 December 1995--31 December 1996

    SciTech Connect

    Arya, R; Fogleboch, J; Kessler, J; Russell, L; Skibo, S; Wiedeman, S

    1997-04-01

    This report describes the progress made at Solarex for both device and module efficiencies from the inception of the CIS research program to the present. A rapid improvement in efficiency is apparent, culminating in the fabrication of a 15.5%-efficient device (total area) and a 13%-efficient submodule (aperture area). The device represents the highest efficiency device measured by NREL for any industrial source at that time. The module represented a new world record for any thin-film module at the time of its measurement. The factors leading to these results included improvements in absorber layer quality, transparent contacts, scribing and module formation processes. Other elements critical to the commercialization of CIS-based photovoltaics were also successfully attacked, including reduction of absorber deposition times into the range of 10 to 20 minutes and the successful scale-up of the absorber deposition process to greater than 500 cm{sup 2}. Other requisite processes saw continued development, such as a rapid, low-cost method for transparent window deposition. Subsequent to the demonstration of 13% module efficiency, scribing techniques were further improved that resulted in a reduction in shunt losses and higher module fill factor. This improvement, and the concomitant gain in fill factor, would yield efficiencies approaching 14% on modules having a short-circuit and open-circuit voltage comparable to the record module.

  16. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual subcontract report, 20 March 1992--19 March 1993

    SciTech Connect

    Trefny, J.U.; Furtak, T.E.; Wada, N.; Williamson, D.L.; Kim, D.

    1993-08-01

    This report describes progress during the first year of a 3-year program at Colorado School of Mines, based upon earlier studies performed by Ametek Corporation, to develop specific layers of the Ametek n-i-p structure as well as additional studies of several transparent conducting oxides. Thin films of ZnO and ZnO:Al were deposited under various conditions. For the n-layer of the Ametek structure, a dip-coating method was developed for the deposition of CdS films. The authors also present data on the characterization of these films by X-ray diffraction, Raman spectroscopy, scanning tunneling microscopy, small-angle X-ray scattering, and other techniques. They made progress in the electrodeposition of the CdTe i-layer of the Ametek structure. They developed appropriate electrochemical baths and are beginning to understand the role of the many experimental parameters that must be controlled to obtain high-quality films of this material. They explored the possibility of using an electrochemical process for fabricating the ZnTe p-layer. Some preliminary success was achieved, and this step will be pursued in the next phase. Finally, they fabricated a number of ``dot`` solar cells with the structure glass/SnO{sub 2}/CdS/CdTe/Au. Several cells with efficiencies in the range of 5%-6% were obtained, and they are confident, given recent progress, that cells with efficiencies in excess of 10% will be achieved in the near future.

  17. Bioactivity of polycrystalline silicon layers.

    PubMed

    Pramatarova, Lilyana; Pecheva, Emilia; Montgomery, Paul; Dimova-Malinovska, Doriana; Petrov, Todor; Toth, Attila L; Dimitrova, Magdalena

    2008-02-01

    After oxygen, silicon is the second most abundant element in the environment and is present as an impurity in most materials. The widespread occurrence of siliceous biominerals as structural elements in lower plants and animals suggests that Si plays a role in the production and maintenance of connective tissue in higher organisms. It has been shown that the presence of Si is necessary in bones, cartilage and in the formation of connective tissue, as well as in some important metabolic processes. In this work, polycrystalline silicon layers are tested in terms of bioactivity, i.e., their ability to induce hydroxyapatite formation from simulated body fluid. Hydroxyapatite is a biologically compatible material with chemical similarity to the inorganic part of bones and teeth. Polycrystalline silicon layers are obtained by aluminum induced crystallization of Al and amorphous Si thin films deposited sequentially on glass substrates by radio-frequency magnetron sputtering and subsequently annealed in different atmospheres. The hydroxyapatite formation is induced by applying a method of laser-liquid-solid interaction. The method consists of irradiating the samples with laser light while immersed in a solution that is supersaturated with respect to Ca and P. As a result, heterogeneous porous sponge-like carbonate-containing hydroxyapatite is grown on the polysilicon surfaces. Crystals that are spherical in shape, containing Ca, P and O, Na, Cl, Mg, Al, Si and S, as well as well-faceted NaCl crystals are embedded in the hydroxyapatite layer. Enhancement of the hydroxyapatite growth and increased crystallinity is observed due to the applied laser-liquid-solid interaction.

  18. Gelcasting Polycrystalline Alumina

    SciTech Connect

    Janney, M.A.; Zuk, K.J.; Wei, G.C.

    2000-01-01

    OSRAM SYLVANIA INC. is a major U.S. manufacturer of high-intensity lighting. Among its products is the Lumalux TM line of high-pressure sodium vapor arc lamps, which are used for industrial, highway, and street lighting. The key to the performance of these lamps is the polycrystalline alumina (PCA) tube that is used to contain the plasma that is formed in the electric arc. That plasma consists of ionized sodium, mercury, and xenon vapors. The key attributes of the PCA tubes are their transparency ({approximately}97% total transmittance in the visible), their refractoriness (inner wall temperature can reach l2OOC), and their chemical resistance (sodium and mercury vapor are extremely corrosive). The current efficiency of the lamps is very high, up to 100 initial lumens per watt. (Compare incandescent lamps 10-20 lumens per watt, fluorescent lamps 25-90 lumens per watt.)

  19. Selective and low temperature synthesis of polycrystalline diamond

    NASA Technical Reports Server (NTRS)

    Ramesham, R.; Roppel, T.; Ellis, C.; Baugh, W.; Jaworske, D. A.

    1991-01-01

    Polycrystalline diamond thin films have been deposited on single-crystal silicon substrates at low temperatures (not above 600 C) using a mixture of hydrogen and methane gases by high-pressure microwave plasma-assisted chemical vapor deposition. Low-temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

  20. Charge carrier dynamics and recombination in graded band gap CuIn1-xGaxSe2 polycrystalline thin-film photovoltaic solar cell absorbers

    SciTech Connect

    Kuciauskas, Darius; Li, Jian V.; Contreras, Miguel A.; Pankow, Joel; Dippo, Patricia; Young, Matthew; Mansfield, Lorelle M.; Noufi, Rommel; Levi, Dean

    2013-01-01

    We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn1-xGaxSe2 (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75–230 cm2 V-1s-1. Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5×1015–1017cm-3. Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells.

  1. Gelcasting polycrystalline alumina

    SciTech Connect

    Janney, M.A.

    1997-04-01

    This work is being done as part of a CRADA with Osram-Sylvania, Inc. (OSI) OSI is a major U.S. manufacturer of high-intensity lighting. Among its products is the Lumalux{reg_sign} line of high-pressure sodium vapor arc lamps, which are used for industrial, highway, and street lighting. The key to the performance of these lamps is the polycrystalline alumina (PCA) tube that is used to contain the plasma that is formed in the electric arc. That plasma consists of ionized sodium, mercury, and xenon vapors. The key attributes of the PCA tubes are their transparency (95% total transmittance in the visible region), their refractoriness (inner wall temperature can reach 1400{degrees}C), and their chemical resistance (sodium and mercury vapor are extremely corrosive). The current efficiency of the lamps is very high, on the order of several hundred lumens / watt. (Compare - incandescent lamps -13 lumens/watt fluorescent lamps -30 lumens/watt.) Osram-Sylvania would like to explore using gelcasting to form PCA tubes for Lumalux{reg_sign} lamps, and eventually for metal halide lamps (known as quartz-halogen lamps). Osram-Sylvania, Inc. currently manufactures PCA tubes by isostatic pressing. This process works well for the shapes that they presently use. However, there are several types of tubes that are either difficult or impossible to make by isostatic pressing. It is the desire to make these new shapes and sizes of tubes that has prompted Osram-Sylvania`s interest in gelcasting. The purpose of the CRADA is to determine the feasibility of making PCA items having sufficient optical quality that they are useful in lighting applications using gelcasting.

  2. Physics of grain boundaries in polycrystalline photovoltaic semiconductors

    NASA Astrophysics Data System (ADS)

    Yan, Yanfa; Yin, Wan-Jian; Wu, Yelong; Shi, Tingting; Paudel, Naba R.; Li, Chen; Poplawsky, Jonathan; Wang, Zhiwei; Moseley, John; Guthrey, Harvey; Moutinho, Helio; Pennycook, Stephen J.; Al-Jassim, Mowafak M.

    2015-03-01

    Thin-film solar cells based on polycrystalline Cu(In,Ga)Se2 (CIGS) and CdTe photovoltaic semiconductors have reached remarkable laboratory efficiencies. It is surprising that these thin-film polycrystalline solar cells can reach such high efficiencies despite containing a high density of grain boundaries (GBs), which would seem likely to be nonradiative recombination centers for photo-generated carriers. In this paper, we review our atomistic theoretical understanding of the physics of grain boundaries in CIGS and CdTe absorbers. We show that intrinsic GBs with dislocation cores exhibit deep gap states in both CIGS and CdTe. However, in each solar cell device, the GBs can be chemically modified to improve their photovoltaic properties. In CIGS cells, GBs are found to be Cu-rich and contain O impurities. Density-functional theory calculations reveal that such chemical changes within GBs can remove most of the unwanted gap states. In CdTe cells, GBs are found to contain a high concentration of Cl atoms. Cl atoms donate electrons, creating n-type GBs between p-type CdTe grains, forming local p-n-p junctions along GBs. This leads to enhanced current collections. Therefore, chemical modification of GBs allows for high efficiency polycrystalline CIGS and CdTe thin-film solar cells.

  3. Physics of grain boundaries in polycrystalline photovoltaic semiconductors

    SciTech Connect

    Yan, Yanfa Yin, Wan-Jian; Wu, Yelong; Shi, Tingting; Paudel, Naba R.; Li, Chen; Poplawsky, Jonathan; Wang, Zhiwei; Moseley, John; Guthrey, Harvey; Moutinho, Helio; Al-Jassim, Mowafak M.; Pennycook, Stephen J.

    2015-03-21

    Thin-film solar cells based on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) and CdTe photovoltaic semiconductors have reached remarkable laboratory efficiencies. It is surprising that these thin-film polycrystalline solar cells can reach such high efficiencies despite containing a high density of grain boundaries (GBs), which would seem likely to be nonradiative recombination centers for photo-generated carriers. In this paper, we review our atomistic theoretical understanding of the physics of grain boundaries in CIGS and CdTe absorbers. We show that intrinsic GBs with dislocation cores exhibit deep gap states in both CIGS and CdTe. However, in each solar cell device, the GBs can be chemically modified to improve their photovoltaic properties. In CIGS cells, GBs are found to be Cu-rich and contain O impurities. Density-functional theory calculations reveal that such chemical changes within GBs can remove most of the unwanted gap states. In CdTe cells, GBs are found to contain a high concentration of Cl atoms. Cl atoms donate electrons, creating n-type GBs between p-type CdTe grains, forming local p-n-p junctions along GBs. This leads to enhanced current collections. Therefore, chemical modification of GBs allows for high efficiency polycrystalline CIGS and CdTe thin-film solar cells.

  4. Anomalous photoelectric effect of a polycrystalline topological insulator film.

    PubMed

    Zhang, Hongbin; Yao, Jiandong; Shao, Jianmei; Li, Hai; Li, Shuwei; Bao, Dinghua; Wang, Chengxin; Yang, Guowei

    2014-07-29

    A topological insulator represents a new state of quantum matter that possesses an insulating bulk band gap as well as a spin-momentum-locked Dirac cone on the surface that is protected by time-reversal symmetry. Photon-dressed surface states and light-induced surface photocurrents have been observed in topological insulators. Here, we report experimental observations of an anomalous photoelectric effect in thin films of Bi2Te3, a polycrystalline topological insulator. Under illumination with non-polarised light, transport measurements reveal that the resistance of the topological surface states suddenly increases when the polycrystalline film is illuminated. The resistance variation is positively dependent on the light intensity but has no relation to the applied electric field; this finding can be attributed to the gap opening of the surface Dirac cone. This observation of an anomalous photoelectric effect in polycrystalline topological insulators offers exciting opportunities for the creation of photodetectors with an unusually broad spectral range. Moreover, polycrystalline topological insulator films provide an attractive material platform for exploring the nature and practical application of topological insulators.

  5. Anomalous Photoelectric Effect of a Polycrystalline Topological Insulator Film

    PubMed Central

    Zhang, Hongbin; Yao, Jiandong; Shao, Jianmei; Li, Hai; Li, Shuwei; Bao, Dinghua; Wang, Chengxin; Yang, Guowei

    2014-01-01

    A topological insulator represents a new state of quantum matter that possesses an insulating bulk band gap as well as a spin-momentum-locked Dirac cone on the surface that is protected by time-reversal symmetry. Photon-dressed surface states and light-induced surface photocurrents have been observed in topological insulators. Here, we report experimental observations of an anomalous photoelectric effect in thin films of Bi2Te3, a polycrystalline topological insulator. Under illumination with non-polarised light, transport measurements reveal that the resistance of the topological surface states suddenly increases when the polycrystalline film is illuminated. The resistance variation is positively dependent on the light intensity but has no relation to the applied electric field; this finding can be attributed to the gap opening of the surface Dirac cone. This observation of an anomalous photoelectric effect in polycrystalline topological insulators offers exciting opportunities for the creation of photodetectors with an unusually broad spectral range. Moreover, polycrystalline topological insulator films provide an attractive material platform for exploring the nature and practical application of topological insulators. PMID:25069391

  6. Hopping conduction in polycrystalline semiconductors

    NASA Astrophysics Data System (ADS)

    Sharma, R. P.; Shukla, A. K.; Kapoor, A. K.; Srivastava, R.; Mathur, P. C.

    1985-03-01

    Measurements of dc conductivity (sigma) on polycrystalline semiconductors, viz., InSb, Si, and CdTe, have been reported in the temperature range 77-300 K. The conduction mechanism near liquid-nitrogen temperature has been identified as the hopping of charge carriers from the charged trap centers to empty traps near the Fermi level.

  7. A comparative study of the microstructural and magnetic properties of <1 1 0> textured thin polycrystalline Fe100-xGax (10 ≤ x ≤ 35) films

    NASA Astrophysics Data System (ADS)

    Javed, A.; Morley, N. A.; Szumiata, T.; Gibbs, M. R. J.

    2011-05-01

    In this work, we present a detailed analysis of the microstructure and magnetic properties of 50 ± 2 nm thick polycrystalline Fe 100- xGa x (10 ≤ x ≤ 35) films. Two sets of Fe 100- xGa x films were fabricated on Si 1 0 0 substrates with and without a forming field Hf present. Microstructural properties were studied using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and conversion electron Mössbauer spectroscopy (CEMS). Magnetic properties were studied using the magneto optical Kerr effect (MOKE) magnetometer. For all films, the 1 1 0 texture normal to the film plane was observed from XRD. No peaks corresponding to the ordered D0 3 or L1 2 phases were observed from XRD. Using CEMS, the disordered A2 phase was confirmed in all films. It was found that the magnetostriction in Set-1 (forming field Hf = 0) films was ˜40-50% higher compared to the Set-2 ( Hf ≠ 0) films over the whole Ga composition range studied. Both film sets have a strong dependence of saturation field H s on Ga composition. Set-1 films were magnetically isotropic but a weak uniaxial anisotropy was observed in Set-2 films. The saturation field H s in Set-2 films was significantly lower compared to the Set-1 films. It was concluded that the H f reduced H s but also reduced effective saturation magnetostriction constant λeff in the films.

  8. Transparent polycrystalline cubic silicon nitride.

    PubMed

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-03-17

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions.

  9. Transparent polycrystalline cubic silicon nitride

    NASA Astrophysics Data System (ADS)

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-03-01

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions.

  10. Electronic transport in polycrystalline graphene.

    PubMed

    Yazyev, Oleg V; Louie, Steven G

    2010-10-01

    Most materials in available macroscopic quantities are polycrystalline. Graphene, a recently discovered two-dimensional form of carbon with strong potential for replacing silicon in future electronics, is no exception. There is growing evidence of the polycrystalline nature of graphene samples obtained using various techniques. Grain boundaries, intrinsic topological defects of polycrystalline materials, are expected to markedly alter the electronic transport in graphene. Here, we develop a theory of charge carrier transmission through grain boundaries composed of a periodic array of dislocations in graphene based on the momentum conservation principle. Depending on the grain-boundary structure we find two distinct transport behaviours--either high transparency, or perfect reflection of charge carriers over remarkably large energy ranges. First-principles quantum transport calculations are used to verify and further investigate this striking behaviour. Our study sheds light on the transport properties of large-area graphene samples. Furthermore, purposeful engineering of periodic grain boundaries with tunable transport gaps would allow for controlling charge currents without the need to introduce bulk bandgaps in otherwise semimetallic graphene. The proposed approach can be regarded as a means towards building practical graphene electronics.

  11. Transparent polycrystalline cubic silicon nitride

    PubMed Central

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-01-01

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions. PMID:28303948

  12. Measuring long-range carrier diffusion across multiple grains in polycrystalline semiconductors by photoluminescence imaging.

    PubMed

    Alberi, K; Fluegel, B; Moutinho, H; Dhere, R G; Li, J V; Mascarenhas, A

    2013-01-01

    Thin-film polycrystalline semiconductors are currently at the forefront of inexpensive large-area solar cell and integrated circuit technologies because of their reduced processing and substrate selection constraints. Understanding the extent to which structural and electronic defects influence carrier transport in these materials is critical to controlling the optoelectronic properties, yet many measurement techniques are only capable of indirectly probing their effects. Here we apply a novel photoluminescence imaging technique to directly observe the low temperature diffusion of photocarriers through and across defect states in polycrystalline CdTe thin films. Our measurements show that an inhomogeneous distribution of localized defect states mediates long-range hole transport across multiple grain boundaries to locations exceeding 10 μm from the point of photogeneration. These results provide new insight into the key role deep trap states have in low temperature carrier transport in polycrystalline CdTe by revealing their propensity to act as networks for hopping conduction.

  13. Measuring long-range carrier diffusion across multiple grains in polycrystalline semiconductors by photoluminescence imaging

    NASA Astrophysics Data System (ADS)

    Alberi, K.; Fluegel, B.; Moutinho, H.; Dhere, R. G.; Li, J. V.; Mascarenhas, A.

    2013-10-01

    Thin-film polycrystalline semiconductors are currently at the forefront of inexpensive large-area solar cell and integrated circuit technologies because of their reduced processing and substrate selection constraints. Understanding the extent to which structural and electronic defects influence carrier transport in these materials is critical to controlling the optoelectronic properties, yet many measurement techniques are only capable of indirectly probing their effects. Here we apply a novel photoluminescence imaging technique to directly observe the low temperature diffusion of photocarriers through and across defect states in polycrystalline CdTe thin films. Our measurements show that an inhomogeneous distribution of localized defect states mediates long-range hole transport across multiple grain boundaries to locations exceeding 10 μm from the point of photogeneration. These results provide new insight into the key role deep trap states have in low temperature carrier transport in polycrystalline CdTe by revealing their propensity to act as networks for hopping conduction.

  14. Measuring long-range carrier diffusion across multiple grains in polycrystalline semiconductors by photoluminescence imaging

    PubMed Central

    Alberi, K.; Fluegel, B.; Moutinho, H.; Dhere, R. G.; Li, J. V.; Mascarenhas, A.

    2013-01-01

    Thin-film polycrystalline semiconductors are currently at the forefront of inexpensive large-area solar cell and integrated circuit technologies because of their reduced processing and substrate selection constraints. Understanding the extent to which structural and electronic defects influence carrier transport in these materials is critical to controlling the optoelectronic properties, yet many measurement techniques are only capable of indirectly probing their effects. Here we apply a novel photoluminescence imaging technique to directly observe the low temperature diffusion of photocarriers through and across defect states in polycrystalline CdTe thin films. Our measurements show that an inhomogeneous distribution of localized defect states mediates long-range hole transport across multiple grain boundaries to locations exceeding 10 μm from the point of photogeneration. These results provide new insight into the key role deep trap states have in low temperature carrier transport in polycrystalline CdTe by revealing their propensity to act as networks for hopping conduction. PMID:24158163

  15. Growth of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}{endash}Ag thin films ({ital T}{sub {ital c}(0)}=89 K) by pulsed laser ablation on polycrystalline Ba{sub 2}LaNbO{sub 6}: A new perovskite ceramic substrate

    SciTech Connect

    Kurian, J.; Varma, H.K.; Koshy, J.; Pai, S.P.; Pinto, R.

    1996-11-01

    Synthesis and characterization of Ba{sub 2}LaNbO{sub 6} which is a new substrate material for YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} superconductor are reported. Ba{sub 2}LaNbO{sub 6} has a complex cubic perovskite structure (A{sub 2}BB{prime}O{sub 6}) with a lattice constant {ital a}=8.60 A. No detectable chemical reaction between YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} and Ba{sub 2}LaNbO{sub 6} was observed even under severe heat treatment. The dielectric constant and loss factor of Ba{sub 2}LaNbO{sub 6} are in a range suitable for its use as a substrate for microwave applications. Superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}{endash}Ag thin films are grown {ital in} {ital situ} on polycrystalline Ba{sub 2}LaNbO{sub 6} by pulsed laser ablation method. The film exhibited (00{ital l}) orientation of an orthorhombic YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} phase. The films gave a {ital T}{sub {ital c}} onset of 91 K and {ital T}{sub {ital c}(0)} of 89 K. {copyright} {ital 1996 American Institute of Physics.}

  16. Process Research On Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wohlgemuth, J. H.

    1982-01-01

    Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.

  17. Selective CO2 reduction on a polycrystalline Ag electrode enhanced by anodization treatment.

    PubMed

    Zhou, Li Qin; Ling, Chen; Jones, Michael; Jia, Hongfei

    2015-12-28

    Electrochemical reduction of CO2 to CO on polycrystalline silver (Ag) was greatly improved by a simple anodization treatment. A CO faradaic efficiency of 92.8% was achieved at an overpotential of 0.50 V in an aqueous electrolyte. This study suggests that the enhanced performance is due to a preferred (220) orientation and a thin silver oxide layer formed by anodization.

  18. Low temperature production of large-grain polycrystalline semiconductors

    DOEpatents

    Naseem, Hameed A.; Albarghouti, Marwan

    2007-04-10

    An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

  19. Allylamine-mediated DNA attachment to polycrystalline diamond surface

    NASA Astrophysics Data System (ADS)

    Zhuang, H.; Srikanth, Vadali. V. S. S.; Jiang, X.; Luo, J.; Ihmels, H.; Aronov, I.; Wenclawiak, B. W.; Adlung, M.; Wickleder, C.

    2009-10-01

    Allylamine, an unsaturated short carbon chain amine was used to mediate ss-DNA attachment to an H-terminated polycrystalline diamond thin film surface for biosensoric applications. At first, allylamine was photochemically tethered onto the diamond film surface; ss-DNA was then attached via the allylamine linkage. The DNA molecules are then hybridized with the complementary DNA molecules containing fluorescence labels followed by denaturing. Time-of-fight secondary ion mass spectrometry and fluorescence spectroscopy are used to confirm the allylamine bonding and the covalent DNA bonding to the diamond film surface, respectively.

  20. Thin-Film Photovoltaics: Status and Applications to Space Power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

  1. Applications of thin-film photovoltaics for space

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The authors discuss the potential applications of thin-film polycrystalline and amorphous cells for space. There have been great advances in thin-film solar cells for terrestrial applications. Transfer of this technology to space applications could result in ultra low-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper indium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon arrays. The possibility of using thin-film multi-bandgap cascade solar cells is discussed.

  2. Polycrystalline silicon availability for photovoltaic and semiconductor industries

    NASA Technical Reports Server (NTRS)

    Ferber, R. R.; Costogue, E. N.; Pellin, R.

    1982-01-01

    Markets, applications, and production techniques for Siemens process-produced polycrystalline silicon are surveyed. It is noted that as of 1982 a total of six Si materials suppliers were servicing a worldwide total of over 1000 manufacturers of Si-based devices. Besides solar cells, the Si wafers are employed for thyristors, rectifiers, bipolar power transistors, and discrete components for control systems. An estimated 3890 metric tons of semiconductor-grade polycrystalline Si will be used in 1982, and 6200 metric tons by 1985. Although the amount is expected to nearly triple between 1982-89, research is being carried out on the formation of thin films and ribbons for solar cells, thereby eliminating the waste produced in slicing Czolchralski-grown crystals. The free-world Si production in 1982 is estimated to be 3050 metric tons. Various new technologies for the formation of polycrystalline Si at lower costs and with less waste are considered. New entries into the industrial Si formation field are projected to produce a 2000 metric ton excess by 1988.

  3. Influence of Grain Structure and Doping on the Deformation and Fracture of Polycrystalline Silicon for MEMS/NEMS

    DTIC Science & Technology

    2012-08-01

    Champaign Influence of Grain Structure and Doping on the Deformation and Fracture of Polycrystalline Silicon for MEMS /NEMS AFOSR Grant # FA9550-09-1...thin films for MEMS and mechanical properties under open and short circuit conditions: They were the first data of their kind and have drawn interest by industry too. ...Structure and Doping on the Deformation and Fracture of Polycrystalline Silicon for MEMS /NEMS 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM

  4. Casting larger polycrystalline silicon ingots

    SciTech Connect

    Wohlgemuth, J.; Tomlinson, T.; Cliber, J.; Shea, S.; Narayanan, M.

    1995-08-01

    Solarex has developed and patented a directional solidification casting process specifically designed for photovoltaics. In this process, silicon feedstock is melted in a ceramic crucible and solidified into a large grained semicrystalline silicon ingot. In-house manufacture of low cost, high purity ceramics is a key to the low cost fabrication of Solarex polycrystalline wafers. The casting process is performed in Solarex designed casting stations. The casting operation is computer controlled. There are no moving parts (except for the loading and unloading) so the growth process proceeds with virtually no operator intervention Today Solarex casting stations are used to produce ingots from which 4 bricks, each 11.4 cm by 11.4 cm in cross section, are cut. The stations themselves are physically capable of holding larger ingots, that would yield either: 4 bricks, 15 cm by 15 an; or 9 bricks, 11.4 cm by 11.4 an in cross-section. One of the tasks in the Solarex Cast Polycrystalline Silicon PVMaT Program is to design and modify one of the castings stations to cast these larger ingots. If successful, this effort will increase the production capacity of Solarex`s casting stations by 73% and reduce the labor content for casting by an equivalent percentage.

  5. Fracture behaviour of polycrystalline tungsten

    NASA Astrophysics Data System (ADS)

    Gaganidze, Ermile; Rupp, Daniel; Aktaa, Jarir

    2014-03-01

    Fracture behaviour of round blank polycrystalline tungsten was studied by means of three point bending Fracture-Mechanical (FM) tests at temperatures between RT and 1000 °C and under high vacuum. To study the influence of the anisotropic microstructure on the fracture toughness (FT) and ductile-to-brittle transition (DBT) the specimens were extracted in three different, i.e. longitudinal, radial and circumferential orientations. The FM tests yielded distinctive fracture behaviour for each specimen orientation. The crack propagation was predominantly intergranular for longitudinal orientation up to 600 °C, whereas transgranular cleavage was observed at low test temperatures for radial and circumferentially oriented specimens. At intermediate test temperatures the change of the fracture mode took place for radial and circumferential orientations. Above 800 °C all three specimen types showed large ductile deformation without noticeable crack advancement. For longitudinal specimens the influence of the loading rate on the FT and DBT was studied in the loading rate range between 0.06 and 18 MPa m1/2/s. Though an increase of the FT was observed for the lowest loading rate, no resolvable dependence of the DBT on the loading rate was found partly due to loss of FT validity. A Master Curve approach is proposed to describe FT vs. test temperature data on polycrystalline tungsten. Fracture safe design space was identified by analysis compiled FT data.

  6. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wrigley, C. Y.

    1985-01-01

    Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

  7. Polycrystalline Silicon: a Biocompatibility Assay

    SciTech Connect

    Pecheva, E.; Fingarova, D.; Pramatarova, L.; Hikov, T.; Laquerriere, P.; Bouthors, Sylvie; Dimova-Malinovska, D.; Montgomery, P.

    2010-01-21

    Polycrystalline silicon (poly-Si) layers were functionalized through the growth of biomimetic hydroxyapatite (HA) on their surface. HA is the mineral component of bones and teeth and thus possesses excellent bioactivity and biocompatibility. MG-63 osteoblast-like cells were cultured on both HA-coated and un-coated poly-Si surfaces for 1, 3, 5 and 7 days and toxicity, proliferation and cell morphology were investigated. The results revealed that the poly-Si layers were bioactive and compatible with the osteoblast-like cells. Nevertheless, the HA coating improved the cell interactions with the poly-Si surfaces based on the cell affinity to the specific chemical composition of the bone-like HA and/or to the higher HA roughness.

  8. Shock waves in polycrystalline iron.

    PubMed

    Kadau, Kai; Germann, Timothy C; Lomdahl, Peter S; Albers, Robert C; Wark, Justin S; Higginbotham, Andrew; Holian, Brad Lee

    2007-03-30

    The propagation of shock waves through polycrystalline iron is explored by large-scale atomistic simulations. For large enough shock strengths the passage of the wave causes the body-centered-cubic phase to transform into a close-packed phase with most structure being isotropic hexagonal-close-packed (hcp) and, depending on shock strength and grain orientation, some fraction of face-centered-cubic (fcc) structure. The simulated shock Hugoniot is compared to experiments. By calculating the extended x-ray absorption fine structure (EXAFS) directly from the atomic configurations, a comparison to experimental EXAFS measurements of nanosecond-laser shocks shows that the experimental data is consistent with such a phase transformation. However, the atomistically simulated EXAFS spectra also show that an experimental distinction between the hcp or fcc phase is not possible based on the spectra alone.

  9. Interface scattering in polycrystalline thermoelectrics

    SciTech Connect

    Popescu, Adrian; Haney, Paul M.

    2014-03-28

    We study the effect of electron and phonon interface scattering on the thermoelectric properties of disordered, polycrystalline materials (with grain sizes larger than electron and phonons' mean free path). Interface scattering of electrons is treated with a Landauer approach, while that of phonons is treated with the diffuse mismatch model. The interface scattering is embedded within a diffusive model of bulk transport, and we show that, for randomly arranged interfaces, the overall system is well described by effective medium theory. Using bulk parameters similar to those of PbTe and a square barrier potential for the interface electron scattering, we identify the interface scattering parameters for which the figure of merit ZT is increased. We find the electronic scattering is generally detrimental due to a reduction in electrical conductivity; however, for sufficiently weak electronic interface scattering, ZT is enhanced due to phonon interface scattering.

  10. Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature.

    PubMed

    Voyles, P M; Gerbi, J E; Treacy, M M; Gibson, J M; Abelson, J R

    2001-06-11

    Using fluctuation electron microscopy, we have observed an increase in the mesoscopic spatial fluctuations in the diffracted intensity from vapor-deposited silicon thin films as a function of substrate temperature from the amorphous to polycrystalline regimes. We interpret this increase as an increase in paracrystalline medium-range order in the sample. A paracrystal consists of topologically crystalline grains in a disordered matrix; in this model the increase in ordering is caused by an increase in the grain size or density. Our observations are counter to the previous belief that the amorphous to polycrystalline transition is a discontinuous disorder-order phase transition.

  11. Defect engineering by ultrasound treatment in polycrystalline silicon

    SciTech Connect

    Ostapenko, S.; Jastrzebski, L.

    1995-08-01

    By applying ultrasound treatment (UST) to bulk and thin film polycrystalline Si (poly-Si) we have found a dramatic improvement of recombination and transport properties. The increasing of minority carrier lifetime by as much as one order of magnitude was found in short diffusion length regions, while exhibiting a strong dispersion for entire solar-grade poly-Si wafer. Relevant mechanisms are attributed to ultrasound processing on crystallographic defects, as well as UST stimulated dissociation of Fe-B pairs followed by Fe{sub i} gettering. A spectacular improvement of hydrogenation efficiency in poly-Si thin-films on glass substrate is demonstrated by resistivity study and confirmed using spatially resolved photoluminescence and nanoscale contact potential difference mapping. By applying UST to commercial solar cells we found the increasing of cell efficiency at low light excitation.

  12. Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells; Annual subcontract report, 1 March 1992--28 February 1993

    SciTech Connect

    Gray, J.L.; Schwartz, R.J.; Lee, Y.J.

    1994-03-01

    Solar cells operate by converting the radiation power from sun light into electrical power through photon absorption by semiconductor materials. The elemental and compound material systems widely used in photovoltaic applications can be produced in a variety of crystalline and non-crystalline forms. Although the crystalline group of materials have exhibited high conversion efficiencies, their production cost are substantially high. Several candidates in the poly- and micro-crystalline family of materials have recently gained much attention due to their potential for low cost manufacturability, stability, reliability and good performance. Among those materials, CuInSe{sub 2} and CdTe are considered to be the best choices for production of thin film solar cells because of the good optical properties and almost ideal band gap energies. Considerable progress was made with respect to cell performance and low cost manufacturing processes. Recently conversion efficiencies of 14.1 and 14.6% have been reported for CuInSe{sub 2} and CdTe based solar cells respectively. Even though the efficiencies of these cells continue to improve, they are not fully understood materials and there lies an uncertainty in their electrical properties and possible attainable performances. The best way to understand the details of current transport mechanisms and recombinations is to model the solar cells numerically. By numerical modeling, the processes which limit the cell performance can be sought and therefore, the most desirable designs for solar cells utilizing these materials as absorbers can be predicted. The problems with numerically modeling CuInSe{sub 2} and CdTe solar cells are that reported values of the pertinent material parameters vary over a wide range, and some quantities such as carrier concentration are not explicitly controlled.

  13. Polycrystalline configurations that maximize electrical resistivity

    NASA Astrophysics Data System (ADS)

    Nesi, Vincenzo; Milton, Graeme W.

    A lower bound on the effective conductivity tensor of polycrystalline aggregates formed from a single basic crystal of conductivity σ was recently established by Avellaneda. Cherkaev, Lurie and Milton. The bound holds for any basic crystal, but for isotropic aggregates of a uniaxial crystal, the bound is achieved by a sphere assemblage model of Schulgasser. This left open the question of attainability of the bound when the crystal is not uniaxial. The present work establishes that the bound is always attained by a rather large class of polycrystalline materials. These polycrystalline materials, with maximal electrical resistivity, are constructed by sequential lamination of the basic crystal and rotations of itself on widely separated length scales. The analysis is facilitated by introducing a tensor S = 0( 0I + σ) -1 where 0 > 0 is chosen so that Tr S = 1. This tensor s is related to the electric field in the optimal polycrystalline configurations.

  14. Efficient Process for Making Polycrystalline Silicon

    NASA Technical Reports Server (NTRS)

    Mccormick, J. R.; Plahutnik, F. JR.; Sawyer, D. H.; Arvidson, A. N.; Goldfarb, S. M.

    1985-01-01

    Solar cells made with lower capital and operating costs. Process based on chemical-vapor deposition (CVD) of dichlorosilane produces high-grade polycrystalline silicon for solar cells. Process has potential as cost-effective replacement for CVD of trichlorosilane.

  15. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1983-01-01

    The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

  16. Improving Solar Cells With Polycrystalline Silicon

    NASA Technical Reports Server (NTRS)

    Rohatgi, Ajeet; Campbell, Robert B.; Rai-Choudhury, Prosenjit

    1987-01-01

    In proposed solar-cell design, layers of polycrystalline silicon grown near front metal grid and back metal surface. Net electrical effect increases open-circuit voltage and short-circuit current, resulting in greater cell power output and energy conversion efficiency. Solar-cell configuration differs from existing one in that layers of doped polycrystalline silicon added to reduce recombination in emitter and back surface field regions.

  17. Improvement in pixel signal uniformity of polycrystalline mercuric iodide films for digital X-ray imaging

    NASA Astrophysics Data System (ADS)

    Oh, Kyungmin; Kim, Jinseon; Shin, Jungwook; Heo, Seunguk; Cho, Gyuseok; Kim, Daekuk; Park, Jigoon; Nam, Sanghee

    2014-03-01

    We investigated polycrystalline mercuric iodide (HgI2) that exhibits uniform pixel signals for its use in digital X-ray imaging. To fabricate thin polycrystalline HgI2 films, the particle-in-binder (PIB) method is used because it enables the fabrication of X-ray conversion films at a low temperature and a normal pressure. Moreover, it has a large-scale deposition capacity at a low cost. Although the thin layers fabricated by the PIB method have such advantages, they are chemically unstable and show poor reproducibility and nonuniform X-ray response. To solve these problems, in this study, additional physical and chemical treatments were performed along with the PIB method after taking the size confinement effect of photoconductive particles into consideration. Morphological and electrical properties were measured to investigate the effects of the physical and chemical treatments.

  18. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition

    NASA Astrophysics Data System (ADS)

    Trefny, J. U.; Furtak, T. E.; Williamson, D. L.; Kim, D.

    1994-07-01

    This report describes the principal results of work performed during the second year of a 3-year program at the Colorado School of Mines (CSM). The work on transparent conducting oxides was carried out primarily by CSM students at NREL and is described in three publications listed in Appendix C. The high-quality ZnO produced from the work was incorporated into a copper indium diselenide cell that exhibited a world-record efficiency of 16.4%. Much of the time was devoted to the improvement of cadmium sulfide films deposited by chemical bath deposition methods and annealed with or without a cadmium chloride treatment. Progress was also made in the electrochemical deposition of cadmium telluride. High-quality films yielding CdS/CdTe/Au cells of greater than 10% efficiency are now being produced on a regular basis. We explored the use of zinc telluride back contacts to form an n-i-p cell structure as previously used by Ametek. We began small-angle x-ray scattering (SAXS) studies to characterize crystal structures, residual stresses, and microstructures of both CdTe and CdS. Large SAXS signals were observed in CdS, most likely because of scattering from gain boundaries. The signals observed to date from CdTe are much weaker, indicating a more homogeneous microstructure. We began to use the ADEPT modeling program, developed at Purdue University, to guide our understanding of the CdS/CdTe cell physics and the improvements that will most likely lead to significantly enhanced efficiencies.

  19. Spectroscopic characterization of charged defects in polycrystalline pentacene by time- and wavelength-resolved electric force microscopy.

    PubMed

    Luria, Justin L; Schwarz, Kathleen A; Jaquith, Michael J; Hennig, Richard G; Marohn, John A

    2011-02-01

    Spatial maps of topography and trapped charge are acquired for polycrystalline pentacene thin-film transistors using electric and atomic force microscopy. In regions of trapped charge, the rate of trap clearing is studied as a function of the wavelength of incident radiation.

  20. Si nanotubes and nanospheres with two-dimensional polycrystalline walls.

    PubMed

    Castrucci, Paola; Diociaiuti, Marco; Tank, Chiti Manohar; Casciardi, Stefano; Tombolini, Francesca; Scarselli, Manuela; De Crescenzi, Maurizio; Mathe, Vikas Laxman; Bhoraskar, Sudha Vasant

    2012-08-21

    We report on the characteristics of a new class of Si-based nanotubes and spherical nanoparticles synthesized by the dc-arc plasma method in a mixture of argon and hydrogen. These two nanostructures share common properties: they are hollow and possess very thin, highly polycrystalline and mainly oxidized walls. In particular, we get several hints indicating that their walls could constitute only one single Si oxidized layer. Moreover, we find that only the less oxidized nanotubes exhibit locally atomic ordered, snakeskin-like areas which possess a hexagonal arrangement which can be interpreted either as an sp(2) or sp(3) hybridized Si or Si-H layer. Their ability to not react with oxygen seems to suggest the presence of sp(2) configuration or the formation of silicon-hydrogen bonding.

  1. The electrical conductivity of polycrystalline metallic films

    NASA Astrophysics Data System (ADS)

    Moraga, Luis; Arenas, Claudio; Henriquez, Ricardo; Bravo, Sergio; Solis, Basilio

    2016-10-01

    We calculate the electrical conductivity of polycrystalline metallic films by means of a semi-numerical procedure that provides solutions of the Boltzmann transport equation, that are essentially exact, by summing over classical trajectories according to Chambers' method. Following Mayadas and Shatzkes (MS), grain boundaries are modeled as an array of parallel plane barriers situated perpendicularly to the direction of the current. Alternatively, according to Szczyrbowski and Schmalzbauer (SS), the model consists in a triple array of these barriers in mutual perpendicular directions. The effects of surface roughness are described by means of Fuchs' specularity parameters. Following SS, the scattering properties of grain boundaries are taken into account by means of another specularity parameter and a probability of coherent passage. The difference between the sum of these and one is the probability of diffuse scattering. When this formalism is compared with the approximate formula of Mayadas and Shatzkes (Phys. Rev. B 1, 103 (1986)) it is shown that the latter greatly overestimates the film resistivity over most values of the reflectivity of the grain boundaries. The dependence of the conductivity of thin films on the probability of coherent passage and grain diameters is examined. In accordance with MS we find that the effects of disorder in the distribution of grain diameters is quite small. Moreover, we find that it is not safe to neglect the effects of the scattering by the additional interfaces created by stacked grains. However, when compared with recent resitivity-thickness data, it is shown that all three formalisms can provide accurate fits to experiment. In addition, it is shown that, depending on the respective reflectivities and distance from a surface, some of these interfaces may increase or diminish considerably the conductivity of the sample. As an illustration of this effect, we show a tentative fit of resistivity data of gold films measured by

  2. Process Research of Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1984-01-01

    A passivation process (hydrogenation) that will improve the power generation of solar cells fabricated from presently produced, large grain, cast polycrystalline silicon (Semix), a potentially low cost material are developed. The first objective is to verify the operation of a DC plasma hydrogenation system and to investigate the effect of hydrogen on the electrical performance of a variety of polycrystalline silicon solar cells. The second objective is to parameterize and optimize a hydrogenation process for cast polycrystalline silicon, and will include a process sensitivity analysis. The sample preparation for the first phase is outlined. The hydrogenation system is described, and some early results that were obtained using the hydrogenation system without a plasma are summarized. Light beam induced current (LBIC) measurements of minicell samples, and their correlation to dark current voltage characteristics, are discussed.

  3. Scaling properties of polycrystalline graphene: a review

    NASA Astrophysics Data System (ADS)

    Isacsson, Andreas; Cummings, Aron W.; Colombo, Luciano; Colombo, Luigi; Kinaret, Jari M.; Roche, Stephan

    2017-03-01

    We present an overview of the electrical, mechanical, and thermal properties of polycrystalline graphene. Most global properties of this material, such as the charge mobility, thermal conductivity, or Young’s modulus, are sensitive to its microstructure, for instance the grain size and the presence of line or point defects. Both the local and global features of polycrystalline graphene have been investigated by a variety of simulations and experimental measurements. In this review, we summarize the properties of polycrystalline graphene, and by establishing a perspective on how the microstructure impacts its large-scale physical properties, we aim to provide guidance for further optimization and improvement of applications based on this material, such as flexible and wearable electronics, and high-frequency or spintronic devices.

  4. Elastic properties of polycrystalline dense matter

    NASA Astrophysics Data System (ADS)

    Kobyakov, D.; Pethick, C. J.

    2015-04-01

    Elastic properties of the solid regions of neutron star crusts and white dwarfs play an important role in theories of stellar oscillations. Matter in compact stars is presumably polycrystalline and, since the elastic properties of single crystals of such matter are very anisotropic, it is necessary to relate elastic properties of the polycrystal to those of a single crystal. We calculate the effective shear modulus of polycrystalline matter with randomly oriented crystallites using a self-consistent theory that has been very successful in applications to terrestrial materials and show that previous calculations overestimate the shear modulus by approximately 28 per cent.

  5. Process Research On Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Wohlgemuth, J. H.; Culik, J. S.

    1982-01-01

    The mechanisms limiting performance in polycrystalline silicon was determined. The initial set of experiments in this task entails the fabrication of cells of various thicknesses for four different bulk resistivities between 0.1 and 10 omega-cm. The results for the first two lots are presented.

  6. Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby

    DOEpatents

    Gonzalez, Franklin N.; Neugroschel, Arnost

    1984-02-14

    A new solar cell structure is provided which will increase the efficiency of polycrystalline solar cells by suppressing or completely eliminating the recombination losses due to the presence of grain boundaries. This is achieved by avoiding the formation of the p-n junction (or other types of junctions) in the grain boundaries and by eliminating the grain boundaries from the active area of the cell. This basic concept can be applied to any polycrystalline material; however, it will be most beneficial for cost-effective materials having small grains, including thin film materials.

  7. Polycrystalline silicon on tungsten substrates

    NASA Technical Reports Server (NTRS)

    Bevolo, A. J.; Schmidt, F. A.; Shanks, H. R.; Campisi, G. J.

    1979-01-01

    Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

  8. Stochastic multiscale modeling of polycrystalline materials

    NASA Astrophysics Data System (ADS)

    Wen, Bin

    Mechanical properties of engineering materials are sensitive to the underlying random microstructure. Quantification of mechanical property variability induced by microstructure variation is essential for the prediction of extreme properties and microstructure-sensitive design of materials. Recent advances in high throughput characterization of polycrystalline microstructures have resulted in huge data sets of microstructural descriptors and image snapshots. To utilize these large scale experimental data for computing the resulting variability of macroscopic properties, appropriate mathematical representation of microstructures is needed. By exploring the space containing all admissible microstructures that are statistically similar to the available data, one can estimate the distribution/envelope of possible properties by employing efficient stochastic simulation methodologies along with robust physics-based deterministic simulators. The focus of this thesis is on the construction of low-dimensional representations of random microstructures and the development of efficient physics-based simulators for polycrystalline materials. By adopting appropriate stochastic methods, such as Monte Carlo and Adaptive Sparse Grid Collocation methods, the variability of microstructure-sensitive properties of polycrystalline materials is investigated. The primary outcomes of this thesis include: (1) Development of data-driven reduced-order representations of microstructure variations to construct the admissible space of random polycrystalline microstructures. (2) Development of accurate and efficient physics-based simulators for the estimation of material properties based on mesoscale microstructures. (3) Investigating property variability of polycrystalline materials using efficient stochastic simulation methods in combination with the above two developments. The uncertainty quantification framework developed in this work integrates information science and materials science, and

  9. Edge determination for polycrystalline silicon lines on gate oxide

    NASA Astrophysics Data System (ADS)

    Villarrubia, John S.; Vladar, Andras E.; Lowney, Jeremiah R.; Postek, Michael T., Jr.

    2001-08-01

    In a scanning electron microscope (SEM) top-down secondary electron image, areas within a few tens of nanometers of the line edges are characteristically brighter than the rest of the image. In general, the shape of the secondary electron signal within such edge regions depends upon the energy and spatial distribution of the electron beam and the sample composition, and it is sensitive to small variations in sample geometry. Assigning edge shape and position is done by finding a model sample that is calculated, on the basis of a mathematical model of the instrument-sample interaction, to produce an image equal to the one actually observed. Edge locations, and consequently line widths, are then assigned based upon this model sample. In previous years we have applied this strategy to lines with geometry constrained by preferential etching of single crystal silicon. With this study we test the procedure on polycrystalline silicon lines. Polycrystalline silicon lines fabricated according to usual industrial processes represent a commercially interesting albeit technically more challenging application of this method. With the sample geometry less constrained a priori, a larger set of possible sample geometries must be modeled and tested for a match to the observed line scan, and the possibility of encountering multiple acceptable matches is increased. For this study we have implemented a data analysis procedure that matches measured image line scans to a precomputed library of sample shapes and their corresponding line scans. Linewidth test patterns containing both isolated and dense lines separated form the underlying silicon substrate by a thin gate oxide have been fabricated. Line scans from test pattern images have been fitted to the library of modeled shapes.

  10. Grain boundary dominated ion migration in polycrystalline organic–inorganic halide perovskite films

    SciTech Connect

    Shao, Yuchuan; Fang, Yanjun; Li, Tao; Wang, Qi; Dong, Qingfeng; Deng, Yehao; Yuan, Yongbo; Wei, Haotong; Wang, Meiyu; Gruverman, Alexei; Shield, Jeffery; Huang, Jinsong

    2016-03-21

    The efficiency of perovskite solar cells is approaching that of single-crystalline silicon solar cells despite the presence of large grain boundary (GB) area in the polycrystalline thin films. Here, by using a combination of nanoscopic and macroscopic level measurements, we show that the ion migration in polycrystalline perovskites is dominated through GBs. Conducting atomic force microscopy measurements reveal much stronger hysteresis both for photocurrent and dark-current at the GBs than on the grains interiors, which can be explained by faster ion migration at the GBs. The dramatically enhanced ion migration results in a redistribution of ions along the GBs after electric poling, in contrast to the intact grain area. The perovskite single-crystal devices without GBs show negligible current hysteresis and no ion-migration signal. Furthermore, the discovery of dominating ion migration through GBs in perovskites can lead to broad applications in many types of devices including photovoltaics, memristors, and ion batteries.

  11. PCED2.0--a computer program for the simulation of polycrystalline electron diffraction pattern.

    PubMed

    Li, X Z

    2010-03-01

    A computer program for the simulation of polycrystalline electron diffraction patterns is described. PCED2.0, an upgraded version of the previous JECP/PCED, can be used as a teaching aid and research tool for phase identification, microstructure texture analysis, and phase fraction determination. In addition to kinematical theory for diffraction intensity calculation of polycrystalline samples, Blackman two-beam dynamical correction is included. March model is used for out-of-plane and in-plane texture simulation. A pseudo-Voigt function is used for the peak profile fitting of diffraction rings. User-friendly interface is improved in the handling of experimental diffraction data and the flexibility of indexing. Application of the program for the analysis of FePt thin films is given as an example.

  12. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1982-01-01

    The investigation of the performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was continued by fabricating a set of minicell wafers on a selection of 10 cm x 10 cm wafers. A minicell wafer consists of an array of small (approximately 0.2 sq cm in area) photodiodes which are isolated from one another by a mesa structure. The junction capacitance of each minicell was used to obtain the dopant concentration, and therefore the resistivity, as a function of position across each wafer. The results indicate that there is no significant variation in resistivity with position for any of the polycrystalline wafers, whether Semix or Wacker. However, the resistivity of Semix brick 71-01E did decrease slightly from bottom to top.

  13. Fluidized bed for production of polycrystalline silicon

    SciTech Connect

    Flagella, R.N.

    1992-08-18

    This patent describes a method for removing silicon powder particles from a reactor that produces polycrystalline silicon by the pyrolysis of a silane containing gas in a fluidized bed reaction zone of silicon seed particles. It comprises introducing the silane containing gas stream into the reaction zone of fluidized silicon seed particles; heterogeneously decomposing the silane containing gas under conditions; collecting the silicon product particles from the collection zone; and removing silicon powder particles from the reactor.

  14. Characterization of electrochemically modified polycrystalline platinum surfaces

    SciTech Connect

    Krebs, L.C.; Ishida, Takanobu

    1991-12-01

    The characterization of electrochemically modified polycrystalline platinum surfaces has been accomplished through the use of four major electrochemical techniques. These were chronoamperometry, chronopotentiommetry, cyclic voltammetry, and linear sweep voltammetry. A systematic study on the under-potential deposition of several transition metals has been performed. The most interesting of these were: Ag, Cu, Cd, and Pb. It was determined, by subjecting the platinum electrode surface to a single potential scan between {minus}0.24 and +1.25 V{sub SCE} while stirring the solution, that the electrocatalytic activity would be regenerated. As a consequence of this study, a much simpler method for producing ultra high purity water from acidic permanganate has been developed. This method results in water that surpasses the water produced by pyrocatalytic distillation. It has also been seen that the wettability of polycrystalline platinum surfaces is greatly dependent on the quantity of oxide present. Oxide-free platinum is hydrophobic and gives a contact angle in the range of 55 to 62 degrees. We have also modified polycrystalline platinum surface with the electrically conducting polymer poly-{rho}-phenylene. This polymer is very stable in dilute sulfuric acid solutions, even under applied oxidative potentials. It is also highly resistant to electrochemical hydrogenation. The wettability of the polymer modified platinum surface is severely dependent on the choice of supporting electrolyte chosen for the electrochemical polymerization. Tetraethylammonium tetrafluoroborate produces a film that is as hydrophobic as Teflon, whereas tetraethylammonium perchlorate produces a film that is more hydrophilic than oxide-free platinum.

  15. High efficiency polycrystalline silicon solar cells using low temperature PECVD process

    SciTech Connect

    Elgamel, H.E.A.

    1998-10-01

    Conventionally directionally solidified (DS) and silicon film (SF) polycrystalline silicon solar cells are fabricated using gettering and low temperature plasma enhanced chemical vapor deposition (PECVD) passivation. Thin layer ({approximately}10 nm) of PECVD SiO{sub 2} is used to passivate the emitter of the solar cell, while direct hydrogen rf plasma and PECVD silicon nitride (Si{sub 3}N{sub 4}) are implemented to provide emitter and bulk passivation. It is found in this work that hydrogen rf plasma can significantly improve the solar cell blue and long wavelength responses when it is performed through a thin layer of PECVD Si{sub 3}N{sub 4}. High efficiency DS and SF polycrystalline silicon solar cells have been achieved using a simple solar cell process with uniform emitter, Al/POCL{sub 3} gettering, hydrogen rf plasma/PECVD Si{sub 3}N{sub 4} and PECVD SiO{sub 2} passivation. On the other hand, a comprehensive experimental study of the characteristics of the PECVD Si{sub 3}N{sub 4} layer and its role in improving the efficiency of polycrystalline silicon solar cells is carried out in this paper. For the polycrystalline silicon used in this investigation, it is found that the PECVD Si{sub 3}N{sub 4} layer doesn`t provide a sufficient cap for the out diffusion of hydrogen at temperatures higher than 500 C. Low temperature ({le}400 C) annealing of the PECVD Si{sub 3}N{sub 4} provides efficient hydrogen bulk passivation, while higher temperature annealing relaxes the deposition induced stress and improves mainly the short wavelength (blue) response of the solar cells.

  16. Thickness-dependent cooperative aging in polycrystalline films of antiferromagnet CoO

    NASA Astrophysics Data System (ADS)

    Ma, Tianyu; Cheng, Xiang; Boettcher, Stefan; Urazhdin, Sergei; Novozhilova, Lydia

    2016-07-01

    We demonstrate that thin polycrystalline films of antiferromagnet CoO, in bilayers with ferromagnetic Permalloy, exhibit slow power-law aging of their magnetization state. The aging characteristics are remarkably similar to those previously observed in thin epitaxial Fe50Mn50 films, indicating that these behaviors are likely generic to ferromagnet/antiferromagnet bilayers. In very thin films, aging is observed over a wide temperature range. In thicker CoO, aging effects become reduced at low temperatures. Aging entirely disappears for large CoO thicknesses. We also investigate the dependence of aging characteristics on temperature and magnetic history. Analysis shows that the observed behaviors are inconsistent with the Neel-Arrhenius model of thermal activation, and are instead indicative of cooperative aging of the antiferromagnet. Our results provide new insights into the mechanisms controlling the stationary states and dynamics of ferromagnet/antiferromagnet bilayers, and potentially other frustrated magnetic systems.

  17. Abnormality in fracture strength of polycrystalline silicene

    NASA Astrophysics Data System (ADS)

    Liu, Ning; Hong, Jiawang; Pidaparti, Ramana; Wang, Xianqiao

    2016-09-01

    Silicene, a silicon-based homologue of graphene, arouses great interest in nano-electronic devices due to its outstanding electronic properties. However, its promising electronic applications are greatly hindered by lack of understanding in the mechanical strength of silicene. Therefore, in order to design mechanically reliable devices with silicene, it is necessary to thoroughly explore the mechanical properties of silicene. Due to current fabrication methods, graphene is commonly produced in a polycrystalline form; the same may hold for silicene. Here we perform molecular dynamics simulations to investigate the mechanical properties of polycrystalline silicene. First, an annealing process is employed to construct a more realistic modeling structure of polycrystalline silicene. Results indicate that a more stable structure is formed due to the breaking and reformation of bonds between atoms on the grain boundaries. Moreover, as the grain size decreases, the efficiency of the annealing process, which is quantified by the energy change, increases. Subsequently, biaxial tensile tests are performed on the annealed samples in order to explore the relation between grain size and mechanical properties, namely in-plane stiffness, fracture strength and fracture strain etc. Results indicate that as the grain size decreases, the fracture strain increases while the fracture strength shows an inverse trend. The decreasing fracture strength may be partly attributed to the weakening effect from the increasing area density of defects which acts as the reservoir of stress-concentrated sites on the grain boundary. The observed crack localization and propagation and fracture strength are well-explained by a defect-pileup model.

  18. Polycrystalline gamma plutonium's elastic moduli versus temperature

    SciTech Connect

    Migliori, Albert; Betts, J; Trugman, A; Mielke, C H; Mitchell, J N; Ramos, M; Stroe, I

    2009-01-01

    Resonant ultrasound spectroscopy was used to measure the elastic properties of pure polycrystalline {sup 239}Pu in the {gamma} phase. Shear and longitudinal elastic moduli were measured simultaneously and the bulk modulus was computed from them. A smooth, linear, and large decrease of all elastic moduli with increasing temperature was observed. They calculated the Poisson ratio and found that it increases from 0.242 at 519 K to 0.252 at 571 K. These measurements on extremely well characterized pure Pu are in agreement with other reported results where overlap occurs.

  19. Process for Polycrystalline film silicon growth

    DOEpatents

    Wang, Tihu; Ciszek, Theodore F.

    2001-01-01

    A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

  20. Directed vapor deposition of amorphous and polycrystalline electronic materials: Nonhydrogenated a-Si

    SciTech Connect

    Groves, J.F.; Jones, S.H.; Globus, T.; Hsiung, L.M.; Wadley, H.

    1995-10-01

    A novel directed vapor deposition (DVD) process for creating amorphous and polycrystalline electronic materials is reported. Initial experimental results for DVD of nonhydrogenated a-Si indicate that growth rates at least between 0.02 and 1.0 {micro}m/min can be achieved. In this process, evaporated silicon is efficiently entrained in a previously formed low pressure supersonic He jet. The silicon is evaporated using a high energy, high voltage, electron beam. The collimated jet of He entrained with silicon is used to deposit thin films of a-Si at room temperature on glass substrates. Initial TEM microstructure analysis and optical absorption analysis is presented.

  1. Synchrotron X-ray Microdiffraction Analysis of Proton Irradiated Polycrystalline Diamond Films

    NASA Technical Reports Server (NTRS)

    Newton, R. I.; Davidson, J. L.; Ice, G. E.; Liu, W.

    2004-01-01

    X-ray microdiffraction is a non-destructive technique that allows for depth-resolved, strain measurements with sub-micron spatial resolution. These capabilities make this technique promising for understanding the mechanical properties of MicroElectroMechanical Systems (MEMS). This investigation examined the local strain induced by irradiating a polycrystalline diamond thin film with a dose of 2x10(exp 17) H(+)per square centimeter protons. Preliminary results indicate that a measurable strain, on the order of 10(exp -3), was introduced into the film near the End of Range (EOR) region of the protons.

  2. Ultrathin films of polycrystalline MnGa alloy with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Ono, Atsuo; Suzuki, Kazuya Z.; Ranjbar, Reza; Sugihara, Atsushi; Mizukami, Shigemi

    2017-02-01

    Room temperature growth of textured polycrystalline films of MnGa alloys using a CoGa buffer layer on a thermally oxidized Si substrate is demonstrated. MnGa thin films with a thickness of 2 nm exhibit out-of-plane rectangular hysteresis loops. A small saturation magnetization of about 200 emu/cm3 and a large perpendicular magnetic anisotropy of up to 3–5 Merg/cm3 were achieved for 2- and 3-nm-thick MnGa ultrathin films; such values have never been reported before, and they provide a pathway for integration with conventional Si technology.

  3. Acidic magnetorheological finishing of infrared polycrystalline materials

    DOE PAGES

    Salzman, S.; Romanofsky, H. J.; West, G.; ...

    2016-10-12

    Here, chemical-vapor–deposited (CVD) ZnS is an example of a polycrystalline material that is difficult to polish smoothly via the magnetorheological–finishing (MRF) technique. When MRF-polished, the internal infrastructure of the material tends to manifest on the surface as millimeter-sized “pebbles,” and the surface roughness observed is considerably high. The fluid’s parameters important to developing a magnetorheological (MR) fluid that is capable of polishing CVD ZnS smoothly were previously discussed and presented. These parameters were acidic pH (~4.5) and low viscosity (~47 cP). MRF with such a unique MR fluid was shown to reduce surface artifacts in the form of pebbles; however,more » surface microroughness was still relatively high because of the absence of a polishing abrasive in the formulation. In this study, we examine the effect of two polishing abrasives—alumina and nanodiamond—on the surface finish of several CVD ZnS substrates, and on other important IR polycrystalline materials that were finished with acidic MR fluids containing these two polishing abrasives. Surface microroughness results obtained were as low as ~28 nm peak-to-valley and ~6-nm root mean square.« less

  4. Electrical properties of polycrystalline methane hydrate

    USGS Publications Warehouse

    Du Frane, W. L.; Stern, L.A.; Weitemeyer, K.A.; Constable, S.; Pinkston, J.C.; Roberts, J.J.

    2011-01-01

    Electromagnetic (EM) remote-sensing techniques are demonstrated to be sensitive to gas hydrate concentration and distribution and complement other resource assessment techniques, particularly seismic methods. To fully utilize EM results requires knowledge of the electrical properties of individual phases and mixing relations, yet little is known about the electrical properties of gas hydrates. We developed a pressure cell to synthesize gas hydrate while simultaneously measuring in situ frequency-dependent electrical conductivity (σ). Synthesis of methane (CH4) hydrate was verified by thermal monitoring and by post run cryogenic scanning electron microscope imaging. Impedance spectra (20 Hz to 2 MHz) were collected before and after synthesis of polycrystalline CH4 hydrate from polycrystalline ice and used to calculate σ. We determined the σ of CH4 hydrate to be 5 × 10−5 S/m at 0°C with activation energy (Ea) of 30.6 kJ/mol (−15 to 15°C). After dissociation back into ice, σ measurements of samples increased by a factor of ~4 and Ea increased by ~50%, similar to the starting ice samples.

  5. Reversible piezomagnetoelectric switching in bulk polycrystalline ceramics

    SciTech Connect

    Stevenson, T. Bennett, J.; Brown, A. P.; Wines, T.; Bell, A. J.; Comyn, T. P.; Smith, R. I.

    2014-08-01

    Magnetoelectric (ME) coupling in materials offer tremendous advantages in device functionality enabling technologies including advanced electronic memory, combining electronic speed, and efficiency with magnetic robustness. However, low cost polycrystalline ME materials are excluded from most commercial applications, operating only at cryogenic temperatures, impractically large electric/magnetic fields, or with low ME coefficients (1-100 mV/cm Oe). Despite this, the technological potential of single compound ME coupling has continued to drive research into multiferroics over the last two decades. Here we show that by manipulating the large induced atomic strain within the polycrystalline, room temperature multiferroic compound 0.7BiFeO{sub 3}–0.3PbTiO{sub 3}, we can induce a reversible, piezoelectric strain controlled ME effect. Employing an in situ neutron diffraction experiment, we have demonstrated that this piezomagnetoelectric effect manifests with an applied electric field >8 kV/mm at the onset of piezoelectric strain, engineered in to the compound by crystallographic phase mixing. This produces a remarkable intrinsic ME coefficient of 1276 mV/cm Oe, due to a strain driven modification to the oxygen sub-lattice, inducing an increase in magnetic moment per Fe{sup 3+} ion of +0.142 μ{sub B}. This work provides a framework for investigations into strain engineered nanostructures to realize low-cost ME devices designed from the atoms up, as well as contributing to the deeper understanding of single phase ME coupling mechanisms.

  6. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wrigley, C. Y.

    1984-01-01

    Results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Very small grain or short minority-carrier diffusion length silicon was used. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is sometimes 20 to 40 mV less. The goal was to minimize variations in open-circuit voltage and fill-factor caused by defects by passivating these defects using a hydrogenation process. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystaline silicon solar cells.

  7. Development of Novel Polycrystalline Ceramic Scintillators

    SciTech Connect

    Wisniewska, Monika; Boatner, Lynn A; Neal, John S; Jellison Jr, Gerald Earle; Ramey, Joanne Oxendine; North, Andrea L; Wisniewski, Monica; Payzant, E Andrew; Howe, Jane Y; Lempicki, Aleksander; Brecher, Charlie; Glodo, J.

    2008-01-01

    For several decades most of the efforts to develop new scintillator materials have concentrated on high-light-yield inorganic single-crystals while polycrystalline ceramic scintillators, since their inception in the early 1980 s, have received relatively little attention. Nevertheless, transparent ceramics offer a promising approach to the fabrication of relatively inexpensive scintillators via a simple mechanical compaction and annealing process that eliminates single-crystal growth. Until recently, commonly accepted concepts restricted the polycrystalline ceramic approach to materials exhibiting a cubic crystal structure. Here, we report our results on the development of two novel ceramic scintillators based on the non-cubic crystalline materials: Lu SiO:Ce (LSO:Ce) and LaBr:Ce. While no evidence for texturing has been found in their ceramic microstructures, our LSO:Ce ceramics exhibit a surprisingly high level of transparency/ translucency and very good scintillation characteristics. The LSO:Ce ceramic scintillation reaches a light yield level of about 86% of that of a good LSO:Ce single crystal, and its decay time is even faster than in single crystals. Research on LaBr:Ce shows that translucent ceramics of the high-light-yield rare-earth halides can also be synthesized. Our LaBr:Ce ceramics have light yields above 42 000 photons/MeV (i.e., 70%of the single-crystal light yield).

  8. Acidic magnetorheological finishing of infrared polycrystalline materials

    SciTech Connect

    Salzman, S.; Romanofsky, H. J.; West, G.; Marshall, K. L.; Jacobs, S. D.; Lambropoulos, J. C.

    2016-10-12

    Here, chemical-vapor–deposited (CVD) ZnS is an example of a polycrystalline material that is difficult to polish smoothly via the magnetorheological–finishing (MRF) technique. When MRF-polished, the internal infrastructure of the material tends to manifest on the surface as millimeter-sized “pebbles,” and the surface roughness observed is considerably high. The fluid’s parameters important to developing a magnetorheological (MR) fluid that is capable of polishing CVD ZnS smoothly were previously discussed and presented. These parameters were acidic pH (~4.5) and low viscosity (~47 cP). MRF with such a unique MR fluid was shown to reduce surface artifacts in the form of pebbles; however, surface microroughness was still relatively high because of the absence of a polishing abrasive in the formulation. In this study, we examine the effect of two polishing abrasives—alumina and nanodiamond—on the surface finish of several CVD ZnS substrates, and on other important IR polycrystalline materials that were finished with acidic MR fluids containing these two polishing abrasives. Surface microroughness results obtained were as low as ~28 nm peak-to-valley and ~6-nm root mean square.

  9. Singlet exciton fission in polycrystalline pentacene: from photophysics toward devices.

    PubMed

    Wilson, Mark W B; Rao, Akshay; Ehrler, Bruno; Friend, Richard H

    2013-06-18

    Singlet exciton fission is the process in conjugated organic molecules bywhich a photogenerated singlet exciton couples to a nearby chromophore in the ground state, creating a pair of triplet excitons. Researchers first reported this phenomenon in the 1960s, an event that sparked further studies in the following decade. These investigations used fluorescence spectroscopy to establish that exciton fission occurred in single crystals of several acenes. However, research interest has been recently rekindled by the possibility that singlet fission could be used as a carrier multiplication technique to enhance the efficiency of photovoltaic cells. The most successful architecture to-date involves sensitizing a red-absorbing photoactive layer with a blue-absorbing material that undergoes fission, thereby generating additional photocurrent from higher-energy photons. The quest for improved solar cells has spurred a drive to better understand the fission process, which has received timely aid from modern techniques for time-resolved spectroscopy, quantum chemistry, and small-molecule device fabrication. However, the consensus interpretation of the initial studies using ultrafast transient absorption spectroscopy was that exciton fission was suppressed in polycrystalline thin films of pentacene, a material that would be otherwise expected to be an ideal model system, as well as a viable candidate for fission-sensitized photovoltaic devices. In this Account, we review the results of our recent transient absorption and device-based studies of polycrystalline pentacene. We address the controversy surrounding the assignment of spectroscopic features in transient absorption data, and illustrate how a consistent interpretation is possible. This work underpins our conclusion that singlet fission in pentacene is extraordinarily rapid (∼80 fs) and is thus the dominant decay channel for the photoexcited singlet exciton. Further, we discuss our demonstration that triplet excitons

  10. Modelling heat conduction in polycrystalline hexagonal boron-nitride films.

    PubMed

    Mortazavi, Bohayra; Pereira, Luiz Felipe C; Jiang, Jin-Wu; Rabczuk, Timon

    2015-08-19

    We conducted extensive molecular dynamics simulations to investigate the thermal conductivity of polycrystalline hexagonal boron-nitride (h-BN) films. To this aim, we constructed large atomistic models of polycrystalline h-BN sheets with random and uniform grain configuration. By performing equilibrium molecular dynamics (EMD) simulations, we investigated the influence of the average grain size on the thermal conductivity of polycrystalline h-BN films at various temperatures. Using the EMD results, we constructed finite element models of polycrystalline h-BN sheets to probe the thermal conductivity of samples with larger grain sizes. Our multiscale investigations not only provide a general viewpoint regarding the heat conduction in h-BN films but also propose that polycrystalline h-BN sheets present high thermal conductivity comparable to monocrystalline sheets.

  11. Modelling heat conduction in polycrystalline hexagonal boron-nitride films

    PubMed Central

    Mortazavi, Bohayra; Pereira, Luiz Felipe C.; Jiang, Jin-Wu; Rabczuk, Timon

    2015-01-01

    We conducted extensive molecular dynamics simulations to investigate the thermal conductivity of polycrystalline hexagonal boron-nitride (h-BN) films. To this aim, we constructed large atomistic models of polycrystalline h-BN sheets with random and uniform grain configuration. By performing equilibrium molecular dynamics (EMD) simulations, we investigated the influence of the average grain size on the thermal conductivity of polycrystalline h-BN films at various temperatures. Using the EMD results, we constructed finite element models of polycrystalline h-BN sheets to probe the thermal conductivity of samples with larger grain sizes. Our multiscale investigations not only provide a general viewpoint regarding the heat conduction in h-BN films but also propose that polycrystalline h-BN sheets present high thermal conductivity comparable to monocrystalline sheets. PMID:26286820

  12. Multiscale modeling of thermal conductivity of polycrystalline graphene sheets.

    PubMed

    Mortazavi, Bohayra; Pötschke, Markus; Cuniberti, Gianaurelio

    2014-03-21

    We developed a multiscale approach to explore the effective thermal conductivity of polycrystalline graphene sheets. By performing equilibrium molecular dynamics (EMD) simulations, the grain size effect on the thermal conductivity of ultra-fine grained polycrystalline graphene sheets is investigated. Our results reveal that the ultra-fine grained graphene structures have thermal conductivity one order of magnitude smaller than that of pristine graphene. Based on the information provided by the EMD simulations, we constructed finite element models of polycrystalline graphene sheets to probe the thermal conductivity of samples with larger grain sizes. Using the developed multiscale approach, we also investigated the effects of grain size distribution and thermal conductivity of grains on the effective thermal conductivity of polycrystalline graphene. The proposed multiscale approach on the basis of molecular dynamics and finite element methods could be used to evaluate the effective thermal conductivity of polycrystalline graphene and other 2D structures.

  13. Inverse pseudo Hall-Petch relation in polycrystalline graphene.

    PubMed

    Sha, Z D; Quek, S S; Pei, Q X; Liu, Z S; Wang, T J; Shenoy, V B; Zhang, Y W

    2014-08-08

    Understanding the grain size-dependent failure behavior of polycrystalline graphene is important for its applications both structurally and functionally. Here we perform molecular dynamics simulations to study the failure behavior of polycrystalline graphene by varying both grain size and distribution. We show that polycrystalline graphene fails in a brittle mode and grain boundary junctions serve as the crack nucleation sites. We also show that its breaking strength and average grain size follow an inverse pseudo Hall-Petch relation, in agreement with experimental measurements. Further, we find that this inverse pseudo Hall-Petch relation can be naturally rationalized by the weakest-link model, which describes the failure behavior of brittle materials. Our present work reveals insights into controlling the mechanical properties of polycrystalline graphene and provides guidelines for the applications of polycrystalline graphene in flexible electronics and nano-electronic-mechanical devices.

  14. Tensile creep behavior of polycrystalline alumina fibers

    NASA Technical Reports Server (NTRS)

    Yun, H. M.; Goldsby, J. C.

    1993-01-01

    Tensile creep studies were conducted on polycrystalline Nextel 610 and Fiber FP alumina fibers with grain sizes of 100 and 300 nm, respectively. Test conditions were temperatures from 800 to 1050 C and stresses from 60 to 1000 MPa. For both fibers, only a small primary creep portion occurred followed by steady-state creep. The stress exponents for steady-state creep of Nextel 610 and Fiber FP were found to be about 3 and 1, respectively. At lower temperatures, below 1000 C, the finer grained Nextel 610 had a much higher 0.2 percent creep strength for 100 hr than the Fiber FP; while at higher temperatures, Nextel 610 had a comparable creep strength to the Fiber FP. The stress and grain size dependencies suggest Nextel 610 and Fiber FP creep rates are due to grain boundary sliding controlled by interface reaction and Nabarro-Herring mechanisms, respectively.

  15. Imaging performance of crystalline and polycrystalline oxides

    NASA Astrophysics Data System (ADS)

    Duncan, Donald D.; Lange, Charles H.; Fischer, David J.

    1990-10-01

    Knowledge of the scatter characteristics of candidate infrared sensor dome materials is necessary for the evaluation of image quality and susceptibility to bright off-axis sources. For polycrystalline materials in particular, the scattering levels are high enough to warrant concern. To evaluate the effects of scatter on image quality, estimates of the window Point Spread Function (PSF), or its transform, the Optical Transfer Function (OTF) are required. Additionally, estimates of the material scatter cross-section per unit volume are essential for determining flare susceptibility. Experimental procedures and models in use at JHU/APL allow the determination of each. Measurement results are provided for samples of A1203 (ordinary ray), Y203, LaO3-doped Y203, MgAL2O4, and ALON. Applications of these results are illustrated for planar windows having arbitrary orientations with respect to the optical axis.

  16. Plastic deformation of polycrystalline zirconium carbide

    NASA Technical Reports Server (NTRS)

    Darolia, R.; Archbold, T. F.

    1976-01-01

    The compressive yield strength of arc-melted polycrystalline zirconium carbide has been found to vary from 77 kg per sq mm at 1200 C to 19 kg per sq mm at 1800 C. Yield drops were observed with plastic strain-rates greater than 0.003/sec but not with slower strain rates. Strain-rate change experiments yielded values for the strain-rate sensitivity parameter m which range from 6.5 at 1500 C to 3.8 at 1800 C, and the product dislocation velocity stress exponent times T was found to decrease linearly with increasing temperature. The deformation rate results are consistent with the Kelly-Rowcliffe model in which the diffusion of carbon assists the motion of dislocations.

  17. Modeling of Irradiation Hardening of Polycrystalline Materials

    SciTech Connect

    Li, Dongsheng; Zbib, Hussein M.; Garmestani, Hamid; Sun, Xin; Khaleel, Mohammad A.

    2011-09-14

    High energy particle irradiation of structural polycrystalline materials usually produces irradiation hardening and embrittlement. The development of predict capability for the influence of irradiation on mechanical behavior is very important in materials design for next generation reactors. In this work a multiscale approach was implemented to predict irradiation hardening of body centered cubic (bcc) alpha-iron. The effect of defect density, texture and grain boundary was investigated. In the microscale, dislocation dynamics models were used to predict the critical resolved shear stress from the evolution of local dislocation and defects. In the macroscale, a viscoplastic self-consistent model was applied to predict the irradiation hardening in samples with changes in texture and grain boundary. This multiscale modeling can guide performance evaluation of structural materials used in next generation nuclear reactors.

  18. Process Research of Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1984-01-01

    An investigation was begun into the usefulness of molecular hydrogen annealing on polycrystalline solar cells. No improvement was realized even after twenty hours of hydrogenation. Thus, samples were chosen on the basis of: (1) low open circuit voltage; (2) low shunt conductance; and (3) high light generated current. These cells were hydrogenated in molecular hydrogen at 300 C. The differences between the before and after hydrogenation values are so slight as to be negligible. These cells have light generated current densities that indicate long minority carrier diffusion lengths. The open circuit voltage appears to be degraded, and quasi-neutral recombination current enhanced. Therefore, molecular hydrogen is not usful for passivating electrically active defects.

  19. Polycrystalline silicon ion sensitive field effect transistors

    NASA Astrophysics Data System (ADS)

    Yan, F.; Estrela, P.; Mo, Y.; Migliorato, P.; Maeda, H.; Inoue, S.; Shimoda, T.

    2005-01-01

    We report the operation of polycrystalline silicon ion sensitive field effect transistors. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with a Si3N4 sensing layer. Nearly ideal pH sensitivity (54mV /pH) and stable operation have been achieved. Temperature effects have been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The sensitivity to penicillin G is about 10mV/mM, in solutions with concentration lower than the saturation value, which is about 7 mM.

  20. Advanced Micro-Polycrystalline Silicon Films Formed by Blue-Multi-Laser-Diode Annealing

    NASA Astrophysics Data System (ADS)

    Noguchi, Takashi; Chen, Yi; Miyahira, Tomoyuki; de Dieu Mugiraneza, Jean; Ogino, Yoshiaki; Iida, Yasuhiro; Sahota, Eiji; Terao, Motoyasu

    2010-03-01

    Semiconductor blue-multi-laser-diode annealing (BLDA) for amorphous Si film was performed to obtain a film containing uniform polycrystalline silicon (poly-Si) grains as a low temperature poly-Si (LTPS) process used for thin-film transistor (TFT). By adopting continuous wave (CW) mode at the 445 nm wavelength of the BLDA system, the light beam is efficiently absorbed into the thin amorphous silicon film of 50 nm thickness and can be crystallized stably. By adjusting simply the laser power below 6 W with controlled beam shape, the isotropic Si grains from uniform micro-grains to arbitral grain size of polycrystalline phase can be obtained with reproducible by fixing the scan speed at 500 mm/s. As a result of analysis using electron microscopy and atomic force microscopy (AFM), uniform distributed micro-poly-Si grains of smooth surface were observed at a power condition below 5 W and the preferred crystal orientation of (111) face was confirmed. As arbitral grain size can be obtained stably and reproducibly merely by controlling the laser power, BLDA is promising as a next-generation LTPS process for AM OLED panel including a system on glass (SoG).

  1. Submicrometer-wide amorphous and polycrystalline anatase TiO2 waveguides for microphotonic devices.

    PubMed

    Bradley, Jonathan D B; Evans, Christopher C; Choy, Jennifer T; Reshef, Orad; Deotare, Parag B; Parsy, François; Phillips, Katherine C; Lončar, Marko; Mazur, Eric

    2012-10-08

    We demonstrate amorphous and polycrystalline anatase TiO(2) thin films and submicrometer-wide waveguides with promising optical properties for microphotonic devices. We deposit both amorphous and polycrystalline anatase TiO(2) using reactive sputtering and define waveguides using electron-beam lithography and reactive ion etching. For the amorphous TiO(2), we obtain propagation losses of 0.12 ± 0.02 dB/mm at 633 nm and 0.04 ± 0.01 dB/mm at 1550 nm in thin films and 2.6 ± 0.5 dB/mm at 633 nm and 0.4 ± 0.2 dB/mm at 1550 nm in waveguides. Using single-mode amorphous TiO(2) waveguides, we characterize microphotonic features including microbends and optical couplers. We show transmission of 780-nm light through microbends having radii down to 2 μm and variable signal splitting in microphotonic couplers with coupling lengths of 10 μm.

  2. On properties of boundaries and electron conductivity in mesoscopic polycrystalline silicon films for memory devices

    SciTech Connect

    Berman, G.P.; Doolen, G.D.; Mainieri, R.; Rehacek, J.; Campbell, D.K.; Luchnikov, V.A.; Nagaev, K.E.

    1998-02-01

    The authors present the results of MD modeling on the structural properties of grain boundaries (GB) in thin polycrystalline films. The transition from crystalline boundaries with low mismatch angle to amorphous boundaries is investigated. It is shown that the structures of the GBs satisfy a thermodynamical criterion suggested in a cited reference. The potential energy of silicon atoms is closely related with a geometrical quantity -- tetragonality of their coordination with their nearest neighbors. A crossover of the length of localization is observed to analyze the crossover of the length of localization of the single electron states and properties of conductance of the thin polycrystalline film at low temperature. They use a two-dimensional Anderson localization model, with the random one site electron charging energy for a single grain (dot), random non-diagonal matrix elements, and random number of connections between the neighboring grains. The results on the crossover behavior of localization length of the single electron states and characteristic properties of conductance are presented in the region of parameters where the transition from an insulator to a conductor regimes takes place.

  3. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    NASA Astrophysics Data System (ADS)

    Coloma Ribera, R.; van de Kruijs, R. W. E.; Yakshin, A. E.; Bijkerk, F.

    2015-08-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  4. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    SciTech Connect

    Coloma Ribera, R. Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F.

    2015-08-07

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  5. Electron diffraction from polycrystalline materials showing stress induced preferred orientation

    NASA Astrophysics Data System (ADS)

    McKenzie, D. R.; Bilek, M. M. M.

    1999-07-01

    The Gibbs free energy as generalized by J. F. Nye [Physical Properties of Crystals (Clarendon Press, Oxford, 1957), p. 179] is minimized in thermodynamic systems held at constant temperature and constant stress. This function is orientation dependent in all crystal systems in stress fields which are not purely hydrostatic. There are situations in which preferred orientation arises as a result of the synthesis of materials under impressed stress conditions such as thin film growth under ion bombardment and the pressing of powders into solids. Here, we derive the orientational constraints for cubic crystals which result from growth under a general biaxial stress field. The sign of the expression δ=s11-s12-1/2s44 determines the behavior of a cubic crystal. Electron diffraction patterns of face-centered-cubic specimens with both positive and negative values of δ are calculated using a program in MATLAB and displayed in a form suitable for direct comparison with experiment. The use of a biaxial stress with unequal principal components for producing highly oriented polycrystalline material is discussed. In the case of δ positive, as occurs in silicon, the preferred orientation is simply an alignment of the <100> directions along the principal stresses. For δ negative, as occurs in titanium nitride, the preferred orientation depends on the ratio of the principal stresses and low index directions are aligned with the principal stresses only when the principal stresses are either equal or one of them is zero. In the general case, arc-like diffraction patterns are produced. The results of a calculation of a diffraction pattern from a cross-sectional TiN film are compared with diffraction patterns reported by L. Hultman et al. [J. Appl. Phys. 78, 5395 (1995)] and show good agreement.

  6. Polycrystallinity and stacking in CVD graphene.

    PubMed

    Tsen, Adam W; Brown, Lola; Havener, Robin W; Park, Jiwoong

    2013-10-15

    Graphene, a truly two-dimensional hexagonal lattice of carbon atoms, possesses remarkable properties not seen in any other material, including ultrahigh electron mobility, high tensile strength, and uniform broadband optical absorption. While scientists initially studied its intrinsic properties with small, mechanically exfoliated graphene crystals found randomly, applying this knowledge would require growing large-area films with uniform structural and physical properties. The science of graphene has recently experienced revolutionary change, mainly due to the development of several large-scale growth methods. In particular, graphene synthesis by chemical vapor deposition (CVD) on copper is a reliable method to obtain films with mostly monolayer coverage. These films are also polycrystalline, consisting of multiple graphene crystals joined by grain boundaries. In addition, portions of these graphene films contain more than one layer, and each layer can possess a different crystal orientation and stacking order. In this Account, we review the structural and physical properties that originate from polycrystallinity and stacking in CVD graphene. To begin, we introduce dark-field transmission electron microscopy (DF-TEM), a technique which allows rapid and accurate imaging of key structural properties, including the orientation of individual domains and relative stacking configurations. Using DF-TEM, one can easily identify "lateral junctions," or grain boundaries between adjacent domains, as well as "vertical junctions" from the stacking of graphene multilayers. With this technique, we can distinguish between oriented (Bernal or rhombohedral) and misoriented (twisted) configurations. The structure of lateral junctions in CVD graphene is sensitive to growth conditions and is reflected in the material's electrical and mechanical properties. In particular, grain boundaries in graphene grown under faster reactant flow conditions have no gaps or overlaps, unlike more

  7. Polycrystalline silicon semiconducting material by nuclear transmutation doping

    DOEpatents

    Cleland, John W.; Westbrook, Russell D.; Wood, Richard F.; Young, Rosa T.

    1978-01-01

    A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

  8. Colloidal polycrystalline monolayers under oscillatory shear

    NASA Astrophysics Data System (ADS)

    Buttinoni, Ivo; Steinacher, Mathias; Spanke, Hendrik Th.; Pokki, Juho; Bahmann, Severin; Nelson, Bradley; Foffi, Giuseppe; Isa, Lucio

    2017-01-01

    In this paper we probe the structural response to oscillatory shear deformations of polycrystalline monolayers of soft repulsive colloids with varying area fraction over a broad range of frequencies and amplitudes. The particles are confined at a fluid interface, sheared using a magnetic microdisk, and imaged through optical microscopy. The structural and mechanical response of soft materials is highly dependent on their microstructure. If crystals are well understood and deform through the creation and mobilization of specific defects, the situation is much more complex for disordered jammed materials, where identifying structural motifs defining plastically rearranging regions remains an elusive task. Our materials fall between these two classes and allow the identification of clear pathways for structural evolution. In particular, we demonstrate that large enough strains are able to fluidize the system, identifying critical strains that fulfill a local Lindemann criterion. Conversely, smaller strains lead to localized and erratic irreversible particle rearrangements due to the motion of structural defects. In this regime, oscillatory shear promotes defect annealing and leads to the growth of large crystalline domains. Numerical simulations help identify the population of rearranging particles with those exhibiting the largest deviatoric stresses and indicate that structural evolution proceeds towards the minimization of the stress stored in the system. The particles showing high deviatoric stresses are localized around grain boundaries and defects, providing a simple criterion to spot regions likely to rearrange plastically under oscillatory shear.

  9. Interface cavitation damage in polycrystalline copper

    SciTech Connect

    Field, D.P.; Adams, B.L. . Dept. of Mechanical Engineering)

    1992-06-01

    In this paper determination of an interface damage function (IDF), from a stereological procedure similar to that presented by Hillard is described. The mathematical and experimental simplicity of the method is utilized in measuring an IDF for polycrystalline copper crept at 0.6T{sub m} under uniaxial tension. Whereas previous work focussed on a five parameter description of the local state of a grain boundary, the domain of the IDF is increased to eight degrees of freedom in the present study to include the complete geometrical description of grain boundary structure. The resulting functions identify certain types of grain boundaries which were preferentially damaged. Most of the damage occurred on interfaces oriented nearly normal to the principal stress axis. Some relatively small angle boundaries demonstrated a surprising propensity to cavitate as did certain special boundaries distinguished by a group multiplicity in misorientation space greater than one. A sequence of two dimensional projections through the eight-dimensional domain of the IDF is shown to identify a number of interface structures which are readily damaged.

  10. Solution-processed polycrystalline silicon on paper

    SciTech Connect

    Trifunovic, M.; Ishihara, R.; Shimoda, T.

    2015-04-20

    Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their printability, while these materials lack in the electronic performance when compared to silicon electronics. Silicon electronics, on the other hand, has only recently found their way in solution processes. Printing of cyclopentasilane as the silicon ink has been conducted and devices with far superior electric performance have been made when compared to other ink materials. A thermal annealing step of this material, however, was necessary, which prevented its usage on inexpensive substrates with a limited thermal budget. In this work, we introduce a method that allows polycrystalline silicon (poly-Si) production directly from the same liquid silicon ink using excimer laser irradiation. In this way, poly-Si could be formed directly on top of paper even with a single laser pulse. Using this method, poly-Si transistors were created at a maximum temperature of only 150 °C. This method allows silicon device formation on inexpensive, temperature sensitive substrates such as polyethylene terephthalate, polyethylene naphthalate or paper, which leads to applications that require low-cost but high-speed electronics.

  11. Conduction mechanisms in undoped polycrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Chou, Hsueh-Tao; Lee, Chia-Chang; Sun, Chia-Hsin

    2000-07-01

    The unadopted polycrystalline diamond films are deposited on p-type silicon substrates by a microwave plasma chemical vapor deposition (MPCVD) system. The deposition conditions are CH4?/H(subscript 2=0.5%, pressure equals 45 torr, power equals 2.2kW, and subtract temperature equals 885 degree(s)C. SEM was used to inspect the surface morphology, Raman Spectroscopy to determine the quality, and XPS to analyze the chemical composition. It in concluded that a cleaning procedure on diamond surfaces can eliminate the carbon phase but enhance the oxygenation on the films. The electrical characteristics were investigated by current-voltage-temperature measurements in a metal-insulator-semiconductor (MIS) structure with top metal contacts and back silicon substrates contacts. It can be found a transition electric field of 240 kV/cm, where Schottky emission (SE) mechanism is responsible for electric conduction below 240kV/cm, and Poole-Frenkel transport (PF) mechanism dominates beyond 240 kV/cm. By the extrapolations, the Schottky barrier height of silver and diamond film is 2.4 eV, and the tarp depth is 4.75 eV in the diamond film.

  12. Solution-processed polycrystalline silicon on paper

    NASA Astrophysics Data System (ADS)

    Trifunovic, M.; Shimoda, T.; Ishihara, R.

    2015-04-01

    Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their printability, while these materials lack in the electronic performance when compared to silicon electronics. Silicon electronics, on the other hand, has only recently found their way in solution processes. Printing of cyclopentasilane as the silicon ink has been conducted and devices with far superior electric performance have been made when compared to other ink materials. A thermal annealing step of this material, however, was necessary, which prevented its usage on inexpensive substrates with a limited thermal budget. In this work, we introduce a method that allows polycrystalline silicon (poly-Si) production directly from the same liquid silicon ink using excimer laser irradiation. In this way, poly-Si could be formed directly on top of paper even with a single laser pulse. Using this method, poly-Si transistors were created at a maximum temperature of only 150 °C. This method allows silicon device formation on inexpensive, temperature sensitive substrates such as polyethylene terephthalate, polyethylene naphthalate or paper, which leads to applications that require low-cost but high-speed electronics.

  13. Stability of polycrystalline Nextel 720 fiber

    SciTech Connect

    Das, G.

    1996-12-31

    The microstructure and tensile properties of polycrystalline Nextel 720 fiber (85 wt.% Al{sub 2}O{sub 3} - 15 wt-% SiO{sub 2}), both crystallized and precrystallized, were evaluated following prolonged thermal exposure at 982{degrees}C in air. The room temperature tensile strengths of Nextel 720 fibers did not appear to suffer degradation for exposures up to 3000 h and the microstructure remained unaffected by thermal exposures. The tensile strength of precrystallized Nextel 720 fiber was also determined at room temperature following heat treatments at 1093-1427{degrees}C in air. The precrystallized Nextel 720 fiber started to show a slight loss of strength after heat treatment at 1093{degrees}C/4 h and the strength deterioration was exacerbated for heat treatments at 1204{degrees}C/4 h and above. Microstructural characterization by x-ray and transmission electron microscopy (TEM) revealed the formation of mullite in heat treated precrystallized Nextel 720 fiber at 1204{degrees}C and a coarsening of microstructure above 1204{degrees}C. The degradation of strength in precrystallized Nextel 720 fiber heat treated at 1204{degrees}C/4 h and above may be attributed to phase instability and grain coarsening. Fractographs showed that fracture originated predominantly at the fiber surface.

  14. Polishing of dental porcelain by polycrystalline diamond.

    PubMed

    Nakamura, Yoshiharu; Sato, Hideaki; Ohtsuka, Masaki; Hojo, Satoru

    2010-01-01

    Polycrystalline diamond (PCD) exhibits excellent abrasive characteristics and is commonly used as loose grains for precision machining of hard ceramics and other materials that are difficult to grind and polish. In the present study, we investigated using bonded PCD for polishing dental porcelain, for which a lustrous surface is difficult to obtain by polishing. We compared the surface texture and characteristics of dental porcelain after polishing with bonded PCD with that obtained using bonded monocrystalline diamond (MCD), which is commonly used for this purpose. Polishing was performed at various pressures and rotational speeds on a custom-built polishing apparatus using bonded PCD or MCD with grain sizes of 3.92 μm on specimens consisting of VITA Omega 900 dentin porcelain after firing and then glazing to a specified surface roughness. The surface roughness of the polished porcelain and the abrasion quantity in terms of its polishing depth were measured, and its surface texture and characteristics were investigated. At low polishing pressures, PCD yielded a finer polished surface than MCD. The polishing depth after polishing for 20-30 min was approximately 2-3 μm with PCD and 1-2 μm with MCD. The polished surface was more uniform and smooth with PCD than with MCD.

  15. Water vapor interactions with polycrystalline titanium surfaces

    NASA Astrophysics Data System (ADS)

    Azoulay, A.; Shamir, N.; Volterra, V.; Mintz, M. H.

    1999-02-01

    The initial interactions of water vapor with polycrystalline titanium surfaces were studied at room temperature. Measurements of water vapor surface accumulation were performed in a combined surface analysis system incorporating direct recoils spectrometry (DRS), Auger electron spectroscopy and X-ray photoelectron spectroscopy. The kinetics of accommodation of the water dissociation fragments (H, O and OH) displayed a complex behavior depending not only on the exposure dose but also on the exposure pressure. For a given exposure dose the efficiency of chemisorption increased with increasing exposure pressure. DRS measurements indicated the occurrence of clustered hydroxyl moieties with tilted O-H bonds formed even at very low surface coverage. A model which assumes two parallel routes of chemisorption, by direct collisions (Langmuir type) and by a precursor state is proposed to account for the observed behavior. The oxidation efficiency of water seemed to be much lower than that of oxygen. No Ti 4+ states were detected even at high water exposure values. It is likely that hydroxyl species play an important role in the reduced oxidation efficiency of water.

  16. Abnormal hopping conduction in semiconducting polycrystalline graphene

    NASA Astrophysics Data System (ADS)

    Park, Jeongho; Mitchel, William C.; Elhamri, Said; Grazulis, Larry; Altfeder, Igor

    2013-07-01

    We report the observation of an abnormal carrier transport phenomenon in polycrystalline semiconducting graphene grown by solid carbon source molecular beam epitaxy. At the lowest temperatures in samples with small grain size, the conduction does not obey the two-dimensional Mott-type variable-range hopping (VRH) conduction often reported in semiconducting graphene. The hopping exponent p is found to deviate from the 1/3 value expected for Mott VRH with several samples exhibiting a p=2/5 dependence. We also show that the maximum energy difference between hopping sites is larger than the activation energy for nearest-neighbor hopping, violating the assumptions of the Mott model. The 2/5 dependence more closely agrees with the quasi-one-dimensional VRH model proposed by Fogler, Teber, and Shklovskii (FTS). In the FTS model, conduction occurs by tunneling between neighboring metallic wires. We suggest that metallic edge states and conductive grain boundaries play the role of the metallic wires in the FTS model.

  17. Thermophotovoltaic Cells on Zinc Diffused Polycrystalline GaSb

    SciTech Connect

    Sulima, O.V.; Bett, A.W.; Dutta, P.S.; Ehsani, H.; Gutmann, R.J.

    2000-05-01

    For the first time, it has been demonstrated that thermophotovoltaic cells made of polycrystalline GaSb with small grain sizes (down to 100 x 100 {micro}m) have similar characteristics to the best Zinc diffused single crystal GaSb cells with identified device parameters. The grain boundaries in polycrystalline GaSb do not degrade TPV cell parameters, indicating that such material can be used for high-efficiency thermophotovoltaic cells.

  18. Modelling of infrared optical constants for polycrystalline low pressure chemical vapour deposition ZnO:B films

    NASA Astrophysics Data System (ADS)

    Prunici, P.; Hamelmann, F. U.; Beyer, W.; Kurz, H.; Stiebig, H.

    2013-03-01

    Doped zinc oxide films are of high interest in thin film solar cell technology for application as transparent conducting oxide. Rapid and detailed characterisation of ZnO thin film properties is required for quality control and optimisation of the deposited films. In the present work, a new model of dielectric functions based on the effective medium approximation (EMA) is developed and is applied for characterisation of polycrystalline boron doped zinc oxide (ZnO:B) films, deposited by low pressure chemical vapour deposition (LPCVD) technique onto glass substrates. The model takes into account that polycrystalline ZnO is considered to consist of crystal grains surrounded by depletion layers. Using this model and Fourier Transform Infrared Spectroscopy (FTIR) performed in reflection configuration over a wide mid-infrared spectral region (from 2 μm up to 25 μm), the properties of depletion layer and the bulk of the grains in ZnO can be rapidly characterised in detail, and the volume fraction of the depletion layer can be extracted. The results are in good agreement with previously presented theories of electron transport in polycrystalline materials. Using electrical measurements like conductivity and Hall techniques in addition to the optically determined parameters, predominant electron scattering mechanisms in polycrystalline films for different doping levels are identified. The measurements show the impact of the doping level on depletion layer of the crystallites. It is shown, furthermore, that under a water vapour rich environment the volume fraction of the depletion layer may increase up to 5 times and more, while the mobility of the charge carriers in the depletion layer drops drastically from about 31 cm2V-1s-1 to about 8 cm2V-1s-1. This indicates that water vapour exposure causes an increase of the potential barrier in the grain boundary depletion layer, limiting the electron transport across the grain boundaries to a classical thermionic emission

  19. Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals

    DOEpatents

    Albright, Scot P.; Chamberlin, Rhodes R.

    1996-03-26

    A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.

  20. Defect behavior of polycrystalline solar cell silicon

    SciTech Connect

    Schroder, D.K.; Park, S.H.; Hwang, I.G.; Mohr, J.B.; Hanly, M.P.

    1993-05-01

    The major objective of this study, conducted from October 1988 to September 1991, was to gain an understanding of the behavior of impurities in polycrystalline silicon and the influence of these impurities on solar cell efficiency. The authors studied edge-defined film-fed growth (EFG) and cast poly-Si materials and solar cells. With EFG Si they concentrated on chromium-doped materials and cells to determine the role of Cr on solar cell performance. Cast poly-Si samples were not deliberately contaminated. Samples were characterized by cell efficiency, current-voltage, deep-level transient spectroscopy (DLTS), surface photovoltage (SPV), open-circuit voltage decay, secondary ion mass spectrometry, and Fourier transform infrared spectroscopy measurements. They find that Cr forms Cr-B pairs with boron at room temperature and these pairs dissociate into Cr{sub i}{sup +} and B{sup {minus}} during anneals at 210{degrees}C for 10 min. Following the anneal, Cr-B pairs reform at room temperature with a time constant of 230 h. Chromium forms CrSi{sub 2} precipitates in heavily contaminated regions and they find evidence of CrSi{sub 2} gettering, but a lack of chromium segregation or precipitation to grain boundaries and dislocations. Cr-B pairs have well defined DLTS peaks. However, DLTS spectra of other defects are not well defined, giving broad peaks indicative of defects with a range of energy levels in the band gap. In some high-stress, low-efficiency cast poly-Si they detect SiC precipitates, but not in low-stress, high-efficiency samples. SPV measurements result in nonlinear SPV curves in some materials that are likely due to varying optical absorption coefficients due to locally varying stress in the material.

  1. A New Polycrystalline Co-Ni Superalloy

    NASA Astrophysics Data System (ADS)

    Knop, M.; Mulvey, P.; Ismail, F.; Radecka, A.; Rahman, K. M.; Lindley, T. C.; Shollock, B. A.; Hardy, M. C.; Moody, M. P.; Martin, T. L.; Bagot, P. A. J.; Dye, D.

    2014-12-01

    In 2006, a new-ordered L12 phase, Co3(Al,W), was discovered that can form coherently in a face-centered cubic (fcc) A1 Co matrix. Since then, a community has developed that is attempting to take these alloys forward into practical applications in gas turbines. A new candidate polycrystalline Co-Ni γ/ γ' superalloy, V208C, is presented that has the nominal composition 36Co-35Ni-15Cr-10Al-3W-1Ta (at.%). The alloy was produced by conventional powder metallurgy superalloy methods. After forging, a γ' fraction of ~56% and a secondary γ' size of 88 nm were obtained, with a grain size of 2.5 μm. The solvus temperature was 1000°C. The density was found to be 8.52 g cm-3, which is similar to existing Ni alloys with this level of γ'. The alloy showed the flow stress anomaly and a yield strength of 920 MPa at room temperature and 820 MPa at 800°C, similar to that of Mar-M247. These values are significantly higher than those found for either conventional solution and carbide-strengthened Co alloys or the γ/ γ' Co superalloys presented in the literature thus far. The oxidation resistance, with a mass gain of 0.08 mg cm-2 in 100 h at 800°C, is also comparable with that of existing high-temperature Ni superalloys. These results suggest that Co-based and Co-Ni superalloys may hold some promise for the future in gas turbine applications.

  2. Nonlinear alternating current conduction in polycrystalline manganites

    SciTech Connect

    Ghosh, T. N.; Nandi, U. N.; Jana, D.; Dey, K.; Giri, S.

    2014-06-28

    The real part of ac conductance Σ(T, f) of yttrium-doped mixed-valent polycrystalline manganite systems La{sub 1−x−y}Y{sub y}Ca{sub x}MnO{sub 3} with x = 0.33 and 0.05 and y = 0.07 and iron doped LaMn{sub 1−x}Fe{sub x}O{sub 3} with x = 0.15 is measured as a function of frequency f by varying zero-frequency Ohmic conductance Σ{sub 0} by T. The former shows a metal-insulator transition, whereas the latter exhibits insulating character throughout the measured temperature range. At a fixed temperature T, Σ(T, f) remains almost constant to the value Σ{sub 0} up to a certain frequency, known as the onset frequency f{sub c} and increases from Σ{sub 0} as frequency is increased from f{sub c}. Scaled appropriately, the data for Σ(T, f) at different T fall on the same universal curve, indicating the existence of a general scaling formalism for the ac conductance. f{sub c} scales with Σ{sub 0} as f{sub c}∼Σ{sub 0}{sup x{sub f}}, where x{sub f} is the nonlinearity exponent characterising the onset. With the help of data for ac conduction, it is shown that x{sub f} is very much phase sensitive and can be used to characterize the different phases in a manganite system originated due to change in temperature or disorder. Scaling theories and existing theoretical models are used to analyze the results of ac conduction and the nonlinearity exponent x{sub f}.

  3. Long Carrier Lifetimes in Large-Grain Polycrystalline CdTe Without CdCl2

    SciTech Connect

    Jensen, Soren A.; Burst, James M.; Duenow, Joel N.; Guthrey, Harvey L.; Moseley, John; Moutinho, Helio R.; Johnston, Steve W.; Kanevce, Ana; Al-Jassim, Mowafak M.; Metzger, Wyatt K.

    2016-06-27

    For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as silicon and perovskites have produced devices with grains ranging from less than a micron to more than 1 mm. Because the lifetimes in as-deposited polycrystalline CdTe films are typically limited to less than a few hundred picoseconds, a CdCl2 treatment is generally used to improve the lifetime; but this treatment may limit the achievable hole density by compensation. Here, we establish methods to produce CdTe films with grain sizes ranging from hundreds of nanometers to several hundred microns by close-spaced sublimation at industrial manufacturing growth rates. Two-photon excitation photoluminescence spectroscopy shows a positive correlation of lifetime with grain size. Large-grain, as-deposited CdTe exhibits lifetimes exceeding 10 ns without Cl, S, O, or Cu. This uncompensated material allows dopants such as P to achieve a hole density of 1016 cm-3, which is an order of magnitude higher than standard CdCl2-treated devices, without compromising the lifetime.

  4. Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl2

    NASA Astrophysics Data System (ADS)

    Jensen, S. A.; Burst, J. M.; Duenow, J. N.; Guthrey, H. L.; Moseley, J.; Moutinho, H. R.; Johnston, S. W.; Kanevce, A.; Al-Jassim, M. M.; Metzger, W. K.

    2016-06-01

    For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as silicon and perovskites have produced devices with grains ranging from less than a micron to more than 1 mm. Because the lifetimes in as-deposited polycrystalline CdTe films are typically limited to less than a few hundred picoseconds, a CdCl2 treatment is generally used to improve the lifetime; but this treatment may limit the achievable hole density by compensation. Here, we establish methods to produce CdTe films with grain sizes ranging from hundreds of nanometers to several hundred microns by close-spaced sublimation at industrial manufacturing growth rates. Two-photon excitation photoluminescence spectroscopy shows a positive correlation of lifetime with grain size. Large-grain, as-deposited CdTe exhibits lifetimes exceeding 10 ns without Cl, S, O, or Cu. This uncompensated material allows dopants such as P to achieve a hole density of 1016 cm-3, which is an order of magnitude higher than standard CdCl2-treated devices, without compromising the lifetime.

  5. Grain boundary dominated ion migration in polycrystalline organic–inorganic halide perovskite films

    DOE PAGES

    Shao, Yuchuan; Fang, Yanjun; Li, Tao; ...

    2016-03-21

    The efficiency of perovskite solar cells is approaching that of single-crystalline silicon solar cells despite the presence of large grain boundary (GB) area in the polycrystalline thin films. Here, by using a combination of nanoscopic and macroscopic level measurements, we show that the ion migration in polycrystalline perovskites is dominated through GBs. Conducting atomic force microscopy measurements reveal much stronger hysteresis both for photocurrent and dark-current at the GBs than on the grains interiors, which can be explained by faster ion migration at the GBs. The dramatically enhanced ion migration results in a redistribution of ions along the GBs aftermore » electric poling, in contrast to the intact grain area. The perovskite single-crystal devices without GBs show negligible current hysteresis and no ion-migration signal. Furthermore, the discovery of dominating ion migration through GBs in perovskites can lead to broad applications in many types of devices including photovoltaics, memristors, and ion batteries.« less

  6. Orientation-field models for polycrystalline solidification: Grain coarsening and complex growth forms

    NASA Astrophysics Data System (ADS)

    Korbuly, Bálint; Pusztai, Tamás; Tóth, Gyula I.; Henry, Hervé; Plapp, Mathis; Gránásy, László

    2017-01-01

    We compare two versions of the phase-field theory for polycrystalline solidification, both relying on the concept of orientation fields: one by Kobayashi et al. [Physica D 140 (2000) 141] [15] and the other by Henry et al. [Phys. Rev. B 86 (2012) 054117] [22]. Setting the model parameters so that the grain boundary energies and the time scale of grain growth are comparable in the two models, we first study the grain coarsening process including the limiting grain size distribution, and compare the results to those from experiments on thin films, to the models of Hillert, and Mullins, and to predictions by multiphase-field theories. Next, following earlier work by Gránásy et al. [Phys. Rev. Lett. 88 (2002) 206105; Phys. Rev. E 72 (2005) 011605] [17,21], we extend the orientation field to the liquid state, where the orientation field is made to fluctuate in time and space, and employ the model for describing of multi-dendritic solidification, and polycrystalline growth, including the formation of "dizzy" dendrites disordered via the interaction with foreign particles.

  7. Thin EFG octagons

    NASA Astrophysics Data System (ADS)

    Kalejs, J. P.

    1994-03-01

    This report describes work to advance the manufacturing line capabilities in crystal growth and laser cutting of Mobil Solar's unique edge-defined film-fed growth (EFG) octagon technology and to reduce the manufacturing costs of 10 cm x 10 cm polycrystalline silicon EFG wafers. The report summarizes the significant technical improvements in EFG technology achieved in the first 6 months of the PVMaT Phase 2 and the success in meeting program milestones. Technical results are reported for each of the three main pregrain areas: Task 5 -- Thin octagon growth (crystal growth) to reduce the thickness of the octagon to 200 microns; Task 6 -- Laser cutting-to improve the laser cutting process so as to produce wafers with decreased laser cutting damage at increased wafer throughput rates; and Task 7 -- Process control and product specification to implement advanced strategies in crystal growth process control and productivity designed to increase wafer yields.

  8. Thin film processing of photorefractive BaTiO3

    NASA Technical Reports Server (NTRS)

    Schuster, Paul R.; Potember, Richard S.

    1991-01-01

    The principle objectives of this ongoing research involve the preparation and characterization of polycrystalline single-domain thin films of BaTiO3 for photorefractive applications. These films must be continuous, free of cracks, and of high optical quality. The two methods proposed are sputtering and sol-gel related processing.

  9. Direct observation of Barkhausen avalanche in Co thin films.

    PubMed

    Kim, Dong-Hyun; Choe, Sug-Bong; Shin, Sung-Chul

    2003-02-28

    We report direct full-field magneto-optical observations of Barkhausen avalanches in Co polycrystalline thin films at criticality. We provide experimental evidence for the validity of a phenomenological model of the Barkhausen avalanche originally proposed by Cizeau, Zapperi, Durin, and Stanley [Phys. Rev. Lett. 79, 4669 (1997)

  10. Amorphous and polycrystalline photoconductors for direct conversion flat panel x-ray image sensors.

    PubMed

    Kasap, Safa; Frey, Joel B; Belev, George; Tousignant, Olivier; Mani, Habib; Greenspan, Jonathan; Laperriere, Luc; Bubon, Oleksandr; Reznik, Alla; DeCrescenzo, Giovanni; Karim, Karim S; Rowlands, John A

    2011-01-01

    In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs). We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se) has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE). Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF) and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI(2) and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the HARP has been

  11. Amorphous and Polycrystalline Photoconductors for Direct Conversion Flat Panel X-Ray Image Sensors

    PubMed Central

    Kasap, Safa; Frey, Joel B.; Belev, George; Tousignant, Olivier; Mani, Habib; Greenspan, Jonathan; Laperriere, Luc; Bubon, Oleksandr; Reznik, Alla; DeCrescenzo, Giovanni; Karim, Karim S.; Rowlands, John A.

    2011-01-01

    In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs). We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se) has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE). Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF) and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI2 and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the HARP has been

  12. High-resolution mapping of nonuniform carrier transport at contacts to polycrystalline CdTe/CdS solar cells

    NASA Astrophysics Data System (ADS)

    Sutter, P.; Sutter, E.; Ohno, T. R.

    2004-03-01

    We demonstrate a spectroscopic technique based on scanning tunneling microscopy that provides high-resolution maps of local carrier transport across contacts to polycrystalline thin-film solar cells. Using this technique, preferential transport channels across a p+-ZnTe/p-CdTe back contact of a p-CdTe/n-CdS solar cell are imaged with 20 nm spatial resolution. Transport across this contact is highly nonuniform. Large areas of high resistance coexist with nanoscale low-resistance regions that are strongly correlated with grain boundaries in the CdTe absorber. These results suggest an important role of grain boundaries as near-contact conducting channels.

  13. Low temperature growth of high quality CdTe polycrystalline layers

    NASA Astrophysics Data System (ADS)

    Ribeiro, I. R. B.; Suela, J.; Oliveira, J. E.; Ferreira, S. O.; Motisuke, P.

    2007-08-01

    We have investigated the growth of CdTe thin films on glass substrates by hot wall epitaxy. The layers have been characterized by scanning electron microscopy, atomic force microscopy, profilometry, x-ray diffraction and optical transmission. The grown samples are polycrystalline with a high preferential [1 1 1] orientation. Atomic force microscopy and scanning electron microscopy reveal pyramidal grain shapes with a size of around 0.3 µm. The surface roughness increases with sample thickness and growth temperature, reaching about 200 nm for 10 µm thick layers grown at 300 °C. Samples with a thickness of 2 µm grown at 150 °C showed a roughness of less than 40 nm. Optical transmission measurements demonstrate layers with high optical quality.

  14. Role of polycrystallinity in CdTe and CuInSe2 photovoltaic cells

    NASA Astrophysics Data System (ADS)

    Sites, J. R.

    The polycrystalline nature of thin-film CdTe and CuInSe2 solar cells continues to be a major factor in several individual losses that limit overall cell efficiency. This report describes progress in the quantitative separation of these losses, including both measurement and analysis procedures. It also applies these techniques to several individual cells to help document the overall progress with CdTe and CuInSe2 cells. Notably, CdTe cells from Photon Energy have reduced window photocurrent losses to 1 mA/Cm(exp 2); those from the University of South Florida have achieved a maximum power voltage of 693 mV; and CuInSe2 cells from International Solar Electric Technology have shown a hole density as high as 7 x 10(exp 16) cm(exp -3), implying a significant reduction in compensation.

  15. Growth, microstructure, optical and electrical properties of sprayed CuInSe{sub 2} polycrystalline films

    SciTech Connect

    Akl, Alaa A.; Afify, H.H.

    2008-06-03

    Polycrystalline thin films of CuInSe{sub 2} have been prepared by chemical spray pyrolysis technique as a function of Cu/In ratio. Incremental growth of the various ratios followed at different substrate temperatures ranging from 548 to 623 K. Characterizations by means of compositional analysis, X-ray diffraction and spectrophotometry measurements have been carried out. Voigt profile method has been used to determine the microstructure parameter (crystallite/domain size and macrostrain). The effect of Cu/In ratio as well as substrate temperature on the optical features (absorption coefficient and band gap) of these films has been investigated. The films of different Cu/In ratios (0.9-1.1) displayed a band gap from 0.92 to 1.025 eV for direct transition. The dark resistivity measurements at room temperature of Cu-rich samples show about five orders of magnitude higher than that of In-rich samples.

  16. Orientational tomography of optical axes directions distributions of multilayer biological tissues birefringent polycrystalline networks

    NASA Astrophysics Data System (ADS)

    Zabolotna, Natalia I.; Dovhaliuk, Rostyslav Y.

    2013-09-01

    We present a novel measurement method of optic axes orientation distribution which uses a relatively simple measurement setup. The principal difference of our method from other well-known methods lies in direct approach for measuring the orientation of optical axis of polycrystalline networks biological crystals. Our test polarimetry setup consists of HeNe laser, quarter wave plate, two linear polarizers and a CCD camera. We also propose a methodology for processing of measured optic axes orientation distribution which consists of evaluation of statistical, correlational and spectral moments. Such processing of obtained data can be used to classify particular tissue sample as "healthy" or "pathological". For our experiment we use thin layers of histological section of normal and muscular dystrophy tissue sections. It is shown that the difference between mentioned moments` values of normal and pathological samples can be quite noticeable with relative difference up to 6.26.

  17. Plastic behavior of polycrystalline copper at optical scales of deformation

    NASA Astrophysics Data System (ADS)

    Domber, Jeanette Leah

    Microplasticity is permanent deformation that occurs below the proportional limit of a material. For precision deployable optical spacecraft, it is unknown how microplasticity will affect the performance of the precision structure. An examination of the rolling of thin film optical reflectors indicates a strong dependence of the post-deployed shape on the strain hardening exponent of the material. However, confirmation of the valid extension of the constitutive model used to predict the deployed shape to microscopic strain regimes is necessary. The primary objective of this thesis is threefold: determine the relationship between stress and strain at nano to microstrain levels for representative materials; determine if the relationship between microscopic and macroscopic plastic behavior can be accurately characterized by the Ramberg-Osgood strain hardening constitutive model with a single set of material parameters; and determine if dislocation motion is the root cause of microplastic behavior at room temperature. The test apparatus, with a dynamic force range of 40,000 to 1, measures strains from 0.01 to 1000 parts per million (ppm) of cylindrical amorphous quartz and cold-worked and annealed tempered polycrystalline copper specimen. Elastic behavior in all three materials was consistent with typical values. However, plastic responses were larger than expected. Stresses on the order of 10 to 10,000 kPa (1.45 to 1450 psi) produced permanent strain in all three types of materials ranging from 0.01 to 1 ppm, some of which was attributable to a systematic error in the measurement. Extrapolating macroplastic behavior to lower stress and strain values underestimates the amount of microplasticity observed in the material. Therefore, material property characterization is required at all strain levels that are of concern for a particular application. The similarity in the levels of measured permanent strain for a given stress level between the as-drawn and annealed copper

  18. Studies on polycrystalline cadmium sulphide photoanodes

    NASA Astrophysics Data System (ADS)

    Ramprakash, Y.; Subramanian, V.; Krishnakumar, R.; Lakshmanan, A. S.; Venkatesan, V. K.

    The spectral dependence of absolute quantum efficiency for chemically deposited cadmium sulphide thin-film electrodes in 1 M NaOH: 0.1 M Na 2S:0.1 M S, is reported. A peak quantum efficiency of 1.75 × 10 -2 is observed at λ = 560 nm. The diffusion length of minority carriers has been calculated from Gartner's photocurrent equation. The light intensity dependence of the short-circuit current ( Jsc) was linear, whereas the open-circuit voltage ( Voc) showed a [log IL] 2 variation. Reasons for observed low values of Voc and Jsc are discussed.

  19. Polycrystalline CuInSe2 and CdTePV solar cells

    NASA Astrophysics Data System (ADS)

    Dhere, N. G.

    1994-11-01

    This is an annual technical report on the Phase 2 of a three-year phased research program. The principal objective of the research project is to develop novel and low-cost processes for the fabrication of stable and efficient CuIn(1-x) Ga(x)Se2 and CdTe polycrystalline-thin-film solar cells using reliable techniques amenable to scale-up for economic, large-scale manufacture. The aims are to develop a process for the non-toxic selenization so as to avoid the use of extremely toxic H2Se in the fabrication of CuIn(1-x)Ga(x)Se2 thin-film solar cells; to optimize selenization parameters; to develop a process for the fabrication of CdTe solar cells using Cd and Te layers sputtered from elemental targets; to develop an integrated process for promoting the interdiffusion between Cd/Te layers, CdTe phase formation, grain growth, type conversion, and junction formation; to improve adhesion; to minimize residual stresses; to improve the metallic back-contact; to improve the uniformity, stoichiometry, and morphology of CuIn(1-x)Ga(x)Se2 and CdTe thin films; and to improve the efficiency of CuIn(1-x)Ga(x)Se2 and CdTe solar cells.

  20. Real-time X-ray Diffraction Measurements of Shocked Polycrystalline Tin and Aluminum

    SciTech Connect

    Dane V. Morgan, Don Macy, Gerald Stevens

    2008-11-22

    A new, fast, single-pulse x-ray diffraction (XRD) diagnostic for determining phase transitions in shocked polycrystalline materials has been developed. The diagnostic consists of a 37-stage Marx bank high-voltage pulse generator coupled to a needle-and-washer electron beam diode via coaxial cable, producing line and bremsstrahlung x-ray emission in a 35-ns pulse. The characteristic Kα lines from the selected anodes of silver and molybdenum are used to produce the diffraction patterns, with thin foil filters employed to remove the characteristic Kβ line emission. The x-ray beam passes through a pinhole collimator and is incident on the sample with an approximately 3-mm by 6-mm spot and 1° full-width-half-maximum (FWHM) angular divergence in a Bragg-reflecting geometry. For the experiments described in this report, the angle between the incident beam and the sample surface was 8.5°. A Debye-Scherrer diffraction image was produced on a phosphor located 76 mm from the polycrystalline sample surface. The phosphor image was coupled to a charge-coupled device (CCD) camera through a coherent fiberoptic bundle. Dynamic single-pulse XRD experiments were conducted with thin foil samples of tin, shock loaded with a 1-mm vitreous carbon back window. Detasheet high explosive with a 2-mm-thick aluminum buffer was used to shock the sample. Analysis of the dynamic shock-loaded tin XRD images revealed a phase transformation of the tin beta phase into an amorphous or liquid state. Identical experiments with shock-loaded aluminum indicated compression of the face-centered-cubic (fcc) aluminum lattice with no phase transformation.

  1. TOPICAL REVIEW: Modelling polycrystalline solidification using phase field theory

    NASA Astrophysics Data System (ADS)

    Gránásy, László; Pusztai, Tamás; Warren, James A.

    2004-10-01

    We review recent advances made in the phase field modelling of polycrystalline solidification. Areas covered include the development of theory from early approaches that allow for only a few crystal orientations, to the latest models relying on a continuous orientation field and a free energy functional that is invariant to the rotation of the laboratory frame. We discuss a variety of phenomena, including homogeneous nucleation and competitive growth of crystalline particles having different crystal orientations, the kinetics of crystallization, grain boundary dynamics, and the formation of complex polycrystalline growth morphologies including disordered ('dizzy') dendrites, spherulites, fractal-like polycrystalline aggregates, etc. Finally, we extend the approach by incorporating walls, and explore phenomena such as heterogeneous nucleation, particle-front interaction, and solidification in confined geometries (in channels or porous media).

  2. Effect of copper impurity on polycrystalline silicon solar cells

    NASA Technical Reports Server (NTRS)

    Daud, T.; Koliwad, K. M.

    1978-01-01

    The presence of copper impurity, up to 10 to the 15th atoms/cc, in single crystal silicon has been shown to have no deleterious effect on the p-n junction solar cell performance. However, in polycrystalline silicon, copper atoms tend to migrate to the defect sites because of the structural sensitive properties of copper. This study was undertaken to investigate the influence of this behavior of copper impurity on the performance of p-n junction solar cells fabricated from structurally imperfect silicon. Two sets of polycrystalline silicon substrates containing copper were examined. In one set of samples, copper was incorporated during growth, whereas in the other, copper was diffused. Solar cells were fabricated on both the sets of substrates by a standard process. Dark and light I-V and spectral response characteristics of the cells were measured and compared with copper-free polycrystalline silicon solar cells. The results and the model are discussed.

  3. Software optimization for electrical conductivity imaging in polycrystalline diamond cutters

    SciTech Connect

    Bogdanov, G.; Ludwig, R.; Wiggins, J.; Bertagnolli, K.

    2014-02-18

    We previously reported on an electrical conductivity imaging instrument developed for measurements on polycrystalline diamond cutters. These cylindrical cutters for oil and gas drilling feature a thick polycrystalline diamond layer on a tungsten carbide substrate. The instrument uses electrical impedance tomography to profile the conductivity in the diamond table. Conductivity images must be acquired quickly, on the order of 5 sec per cutter, to be useful in the manufacturing process. This paper reports on successful efforts to optimize the conductivity reconstruction routine, porting major portions of it to NVIDIA GPUs, including a custom CUDA kernel for Jacobian computation.

  4. Cu Migration in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christian

    2014-03-12

    An impurity reaction-diffusion model is applied to Cu defects and related intrinsic defects in polycrystalline CdTe for a better understanding of Cu’s role in the cell level reliability of CdTe PV devices. The simulation yields transient Cu distributions in polycrystalline CdTe during solar cell processing and stressing. Preliminary results for Cu migration using available diffusivity and solubility data show that Cu accumulates near the back contact, a phenomena that is commonly observed in devices after back-contact processing or stress conditions.

  5. Mechanical properties of monocrystalline and polycrystalline monolayer black phosphorus

    NASA Astrophysics Data System (ADS)

    Cao, Pinqiang; Wu, Jianyang; Zhang, Zhisen; Ning, Fulong

    2017-01-01

    The mechanical properties of monocrystalline and polycrystalline monolayer black phosphorus (MBP) are systematically investigated using classic molecular dynamic simulations. For monocrystalline MBP, it is found that the shear strain rate, sample dimensions, temperature, atomic vacancies and applied statistical ensemble affect the shear behaviour. The wrinkled morphology is closely connected with the direction of the in-plane shear, dimensions of the samples, and applied ensembles. Particularly, small samples subjected to loading/unloading of the shear deformation along the armchair direction demonstrate a clear mechanical hysteresis loop. For polycrystalline MBP, the maximum shear stress as a function of the average grain size follows an inverse pseudo Hall-Petch type relationship under an isothermal-isobaric (NPT) ensemble, whereas under a canonical (NVT) ensemble, the maximum shear stress of polycrystalline MBP exhibits a ‘flipped’ behaviour. Furthermore, polycrystalline MBP subjected to uniaxial tension also exhibits a strongly grain size-dependent mechanical response, and it can fail by brittle intergranular and transgranular fractures because of its weaker grain boundary structures and the direction-dependent edge energy, respectively. These findings provide useful insight into the mechanical design of BP for nanoelectronic devices.

  6. System of polarization correlometry of biological liquids layers polycrystalline structure

    NASA Astrophysics Data System (ADS)

    Ushenko, A. G.; Boychuk, T. M.; Mincer, O. P.; Angelsky, P. O.; Bodnar, N. B.; Oleinichenko, B. P.; Bizer, L. I.

    2013-09-01

    A model of generalized optical anisotropy of human bile is suggested and a method of polarimetric of the module and phase Fourier of the image of the field of laser radiation is analytically substantiated, that is generated by the mechanisms of linear and circular birefringence of polycrystalline networks with a diagnosis and differentiation of cholelithiasis against a background of chronic cholecystitis.

  7. Raman Microscopic Characterization of Proton-Irradiated Polycrystalline Diamond Films

    NASA Technical Reports Server (NTRS)

    Newton, R. L.; Davidson, J. L.; Lance, M. J.

    2004-01-01

    The microstructural effects of irradiating polycrystalline diamond films with proton dosages ranging from 10(exp 15) to 10(exp 17) H(+) per square centimeter was examined. Scanning Electron Microscopy and Raman microscopy were used to examine the changes in the diamond crystalline lattice as a function of depth. Results indicate that the diamond lattice is retained, even at maximum irradiation levels.

  8. Molybdenum Silicide Formation on Single Crystal, Polycrystalline and Amorphous Silicon: Growth, Structure and Electrical Properties

    NASA Astrophysics Data System (ADS)

    Doland, Charles Michael

    The solid state reactions that occur between a thin metal film and a silicon substrate are of scientific and technological interest. The initial interactions are poorly understood, yet the final state may critically depend on the initial interactions. In this work, the reactions of thin molybdenum films on amorphous, polycrystalline, and single crystal silicon substrates were studied, with an emphasis on the initial interdiffusion and the nucleation of the crystalline silicide phase. Our research was carried out in an ultrahigh vacuum (UHV) system in order to minimize effects of contaminants. In situ Raman scattering and Auger electron spectroscopy were used to probe the structure and composition of the films. Electron microscopy, low energy electron diffraction and Schottky barrier height measurements were used to obtain additional information. The hexagonal phase of the disilicide (h-MoSi _2) is the first phase formed. This occurs after 30 minute annealing at 400^ circC on clean samples. Impurities interfere with this reaction, but substrate crystallinity has no effect. The hexagonal phase transforms to the tetragonal phase (t-MoSi_2) after 800 ^circC annealing for all substrate types. Contamination retards this reaction, resulting in films containing both phases. For the thin films in this study, the transformation to t-MoSi_2 is accompanied by agglomeration of the films. From bulk thermodynamics, t-MoSi_2 is expected to be the first phase formed, but h -MoSi_2 is the first phase observed. This phase nucleates before t-MoSi_2, due to a lower silicide-silicon interfacial energy. Detailed knowledge of interfacial energies and effects of impurities are required to understand the initial phases of thin film solid state reactions.

  9. The state of the art of thin-film photovoltaics

    SciTech Connect

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

  10. [Study on the micro-infrared spectra and origin of polycrystalline diamonds from Mengyin kimberlite pipes].

    PubMed

    Yang, Zhi-Jun; Liang, Rong; Zeng, Xiang-Qing; Ge, Tie-Yan; Ai, Qun; Zheng, Yun-Long; Peng, Ming-Sheng

    2012-06-01

    The natural polycrystalline diamonds from the Mengyin kimberlite pipes can be classified as the euhedral faceted polycrystalline diamonds and anhedral rounded polycrystalline diamonds. The results of micro-FTIR spectra characterization of the polycrystalline diamonds show that the concentration of nitrogen is low, varying from 16.69 to 72.81 microgram per gram and is different among different diamond grains or position in polycrystalline diamonds. The euhedral faceted polycrystalline diamonds are Ia AB type and have higher concentration of A-center defects than B-center defects. Most of the anhedral rounded polycrystalline diamonds are Ia AB type and have higher content of B-center defects. A minority of the anhedral rounded polycrystalline diamonds have C-center, A-center and B-center defects simultaneously. The polycrystalline diamonds probably originated from the relatively deeper mantle and were not formed in diamond nucleation stage, but in the diamond growth period or some special conditions after the diamond grains were formed already. Furthermore, the euhedral faceted polycrystalline diamonds were formed slightly later and the anhedral rounded polycrystalline diamonds were formed obviously earlier than the diamond single crystals from the Mengyin kimberlite pipes.

  11. Influence of substrates on formation of polycrystalline silicon nanowire films

    NASA Astrophysics Data System (ADS)

    Kato, Shinya; Yamazaki, Tatsuya; Miyajima, Shinsuke; Konagai, Makoto

    2014-10-01

    Polycrystalline silicon nanowires (poly-SiNWs) films were successfully prepared by using metal assisted chemical etching of polycrystalline silicon (poly-Si) films. The poly-Si films were prepared by solid-phase crystallization of amorphous silicon (a-Si) deposited by different deposition techniques on different substrates. In the case of the electron beam evaporated a-Si on a quartz substrate, the formation of poly-SiNWs was not observed and the structure was found to be porous silicon. On the other hand, poly-SiNWs successfully formed from poly-Si on a silicon substrate. We also found that deposition techniques for a-Si films affect the formation of poly-SiNWs.

  12. Further development and application of polycrystalline metal whiskers

    NASA Technical Reports Server (NTRS)

    Schladitz, H. J.

    1979-01-01

    High strength metal whiskers have a larger versatile field of application than monocrystalline whiskers. Although polycrystalline metal whiskers can be used for composites, preferably by extrusion in thermoplastics or by infiltration of resins or metals into whisker networks, the chief application at present may be the production and various use of whisker networks. Such networks can be produced up to high degrees of porosity and besides high mechanical strength, they have high inside surfaces and high electric conductivity. There are for instance, applications concerning construction of electrodes for batteries and fuel cells, catalysts and also new heat-exchanger material, capable of preparing fuel oil and gasoline in order to assist a high-efficiency combustion. The technical application of polycrystalline metal whiskers require their modification as well as the construction of a pilot production unit.

  13. Ultrathin polycrystalline 6,13-Bis(triisopropylsilylethynyl)-pentacene films

    SciTech Connect

    Jung, Min-Cherl; Zhang, Dongrong; Nikiforov, Gueorgui O.; Lee, Michael V.; Qi, Yabing; Joo Shin, Tae; Ahn, Docheon; Lee, Han-Koo; Baik, Jaeyoon; Shin, Hyun-Joon

    2015-03-15

    Ultrathin (<6 nm) polycrystalline films of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-P) are deposited with a two-step spin-coating process. The influence of spin-coating conditions on morphology of the resulting film was examined by atomic force microscopy. Film thickness and RMS surface roughness were in the range of 4.0–6.1 and 0.6–1.1 nm, respectively, except for small holes. Polycrystalline structure was confirmed by grazing incidence x-ray diffraction measurements. Near-edge x-ray absorption fine structure measurements suggested that the plane through aromatic rings of TIPS-P molecules was perpendicular to the substrate surface.

  14. Mechanical instability of monocrystalline and polycrystalline methane hydrates

    PubMed Central

    Wu, Jianyang; Ning, Fulong; Trinh, Thuat T.; Kjelstrup, Signe; Vlugt, Thijs J. H.; He, Jianying; Skallerud, Bjørn H.; Zhang, Zhiliang

    2015-01-01

    Despite observations of massive methane release and geohazards associated with gas hydrate instability in nature, as well as ductile flow accompanying hydrate dissociation in artificial polycrystalline methane hydrates in the laboratory, the destabilising mechanisms of gas hydrates under deformation and their grain-boundary structures have not yet been elucidated at the molecular level. Here we report direct molecular dynamics simulations of the material instability of monocrystalline and polycrystalline methane hydrates under mechanical loading. The results show dislocation-free brittle failure in monocrystalline hydrates and an unexpected crossover from strengthening to weakening in polycrystals. Upon uniaxial depressurisation, strain-induced hydrate dissociation accompanied by grain-boundary decohesion and sliding destabilises the polycrystals. In contrast, upon compression, appreciable solid-state structural transformation dominates the response. These findings provide molecular insight not only into the metastable structures of grain boundaries, but also into unusual ductile flow with hydrate dissociation as observed during macroscopic compression experiments. PMID:26522051

  15. Backside damage-gettering in cast polycrystalline silicon

    NASA Technical Reports Server (NTRS)

    Culik, J.; Roncin, S.; Alexander, P.

    1984-01-01

    The technique of backside-damage gettering improves the performance of short minority-carrier diffusion length, large-grain (grain diameter greater than 1 to 2 mm), cast polycrystalline silicon. On average, increases of nearly 20 percent in short-circuit current, 10 mV in open-circuit voltage, and 15 percent in peak-power were obtained by heat-treating 300 micron thick polycrystalline wafers at 1000 C in flowing nitrogen for 5 hours. Additional measurements of the bulk and space-charge recombination current components indicate that this improvement results from a significant increase in the minority-carrier diffusion length due to gettering of impurities from the bulk.

  16. Nucleation and growth of polycrystalline SiC

    NASA Astrophysics Data System (ADS)

    Kaiser, M.; Schimmel, S.; Jokubavicius, V.; Linnarsson, M. K.; Ou, H.; Syväjärvi, M.; Wellmann, P.

    2014-03-01

    The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating gas species. Reducing the pressure leads to growth of the crystallites until a closed polycrystalline SiC layer containing voids with a rough surface is developed. Bulk growth was conducted at 35 mbar Ar pressure at 2250°C in diffusion limited mass transport regime generating a convex shaped growth form of the solid-gas interface leading to lateral expansion of virtually [001] oriented crystallites. Growth at 2350°C led to the stabilization of 6H polytypic grains. The micropipe density in the bulk strongly depends on the substrate used.

  17. Compton profile study of polycrystalline ZnBr{sub 2}

    SciTech Connect

    Dhaka, M. S.; Sharma, G.; Mishra, M. C.; Kothari, R. K.; Sharma, B. K.

    2010-12-01

    The first ever Compton profile study of polycrystalline ZnBr{sub 2} is presented in this paper. The measurement of polycrystalline sample of ZnBr{sub 2} is performed using 59.54 keV gamma-rays emanating from an {sup 241}Am radioisotope. Theoretical calculations are performed following the Ionic model calculations for a number of configurations Zn{sup +x}Br{sub 2}{sup -x/2}(0.0{<=}x{<=}2.0 in step of 0.5) utilizing free atom profiles. The ionic model suggest transfer of 2.0 electrons from 4 s state of Zn to 4 p state of two Br atoms. The autocorrelation function B(z) is also derived from experiment and the most favoured ionic valence Compton profiles.

  18. A characterization study of a hydroxylated polycrystalline tin oxide surface

    NASA Technical Reports Server (NTRS)

    Hoflund, Gar B.; Grogan, Austin L., Jr.; Asbury, Douglas A.; Schryer, David R.

    1989-01-01

    In this study Auger electron spectroscopy, electron spectroscopy for chemical analysis (ESCA) and electron-stimulated desorption (ESD) have been used to examine a polycrystalline tin oxide surface before and after annealing in vacuum at 500 C. Features due to surface hydroxyl groups are present in both the ESCA and ESD spectra, and ESD shows that several chemical states of hydrogen are present. Annealing at 500 C causes a large reduction in the surface hydrogen concentration but not complete removal.

  19. Acoustic Nonlinearity in Polycrystalline Nickel from Fatigue-Generated Microstructures

    SciTech Connect

    Cantrell, John H.

    2005-04-09

    An analytical model of the nonlinear interaction of ultrasonic waves with dislocation substructures formed during the fatigue of wavy slip metals is presented. The model is applied to the calculation of the acoustic nonlinearity parameters {beta} of polycrystalline nickel for increasingly higher levels of fatigue from the virgin state. The values calculated for stress-controlled loading at 345 MPa predict a monotonic increase in {beta} of more than 390 percent as a function of percent life to fracture due to substructural evolution.

  20. Coulometric Study of Ethanol Adsorption at a Polycrystalline Platinum Electrode

    DTIC Science & Technology

    2011-07-01

    value of the ratio Ian/Icalc: 1. The minimal ratio would be 1, corresponding to a one- electron oxidation of one-site attached CH3CH2O surface...Coulometric Study of Ethanol Adsorption at a Polycrystalline Platinum Electrode Sol Gilman Sensors and Electron Devices Directorate, ARL...noble metals and noble metal alloys that can provide what amounts to an adsorbed oxygen “valve” for initiating adsorption/reaction on a clean and

  1. Hardness of polycrystalline tungsten and molybdenum oxides at elevated temperatures

    SciTech Connect

    Lee, M.; Flom, D.G. . Corporate Research and Development Center)

    1990-07-01

    Vickers hardness of WO{sub 3} W{sub 18}O{sub 49} and MoO{sub 2} is reported for temperatures up to 800{degrees}C. Polycrystalline samples of the oxides were prepared by hot-pressing, and hardness was determined using a Vickers hardness tester modified for high-temperature applications. The hardness of a heavily deformed tungsten rod was also measured as a reference.

  2. Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates

    SciTech Connect

    Seo, Won-Oh; Kim, Jihyun; Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol; Kim, Donghwan

    2014-08-25

    We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2 MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

  3. Stress-dependent ultrasonic scattering in polycrystalline materials.

    PubMed

    Kube, Christopher M; Turner, Joseph A

    2016-02-01

    Stress-dependent elastic moduli of polycrystalline materials are used in a statistically based model for the scattering of ultrasonic waves from randomly oriented grains that are members of a stressed polycrystal. The stress is assumed to be homogeneous and can be either residual or generated from external loads. The stress-dependent elastic properties are incorporated into the definition of the differential scattering cross-section, which defines how strongly an incident wave is scattered into various directions. Nine stress-dependent differential scattering cross-sections or scattering coefficients are defined to include all possibilities of incident and scattered waves, which can be either longitudinal or (two) transverse wave types. The evaluation of the scattering coefficients considers polycrystalline aluminum that is uniaxially stressed. An analysis of the influence of incident wave propagation direction, scattering direction, frequency, and grain size on the stress-dependency of the scattering coefficients follows. Scattering coefficients for aluminum indicate that ultrasonic scattering is much more sensitive to a uniaxial stress than ultrasonic phase velocities. By developing the stress-dependent scattering properties of polycrystals, the influence of acoustoelasticity on the amplitudes of waves propagating in stressed polycrystalline materials can be better understood. This work supports the ongoing development of a technique for monitoring and measuring stresses in metallic materials.

  4. Tribological properties of sintered polycrystalline and single crystal silicon carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.; Srinivasan, M.

    1982-01-01

    Tribological studies and X-ray photoelectron spectroscopy analyses were conducted with sintered polycrystalline and single crystal silicon carbide surfaces in sliding contact with iron at various temperatures to 1500 C in a vacuum of 30 nPa. The results indicate that there is a significant temperature influence on both the friction properties and the surface chemistry of silicon carbide. The main contaminants on the as received sintered polycrystalline silicon carbide surfaces are adsorbed carbon, oxygen, graphite, and silicon dioxide. The surface revealed a low coefficient of friction. This is due to the presence of the graphite on the surface. At temperatures of 400 to 600 C graphite and copious amount of silicon dioxide were observed on the polycrystalline silicon carbide surface in addition to silicon carbide. At 800 C, the amount of the silicon dioxide decreased rapidly and the silicon carbide type silicon and carbon peaks were at a maximum intensity in the XPS spectra. The coefficients of friction were high in the temperature range 400 to 800 C. Small amounts of carbon and oxygen contaminants were observed on the as received single crystal silicon carbide surface below 250 C. Silicon carbide type silicon and carbon peaks were seen on the silicon carbide in addition to very small amount of graphite and silicon dioxide at temperatures of 450 to 800 C.

  5. In Situ Graphene Growth Dynamics on Polycrystalline Catalyst Foils

    PubMed Central

    2016-01-01

    The dynamics of graphene growth on polycrystalline Pt foils during chemical vapor deposition (CVD) are investigated using in situ scanning electron microscopy and complementary structural characterization of the catalyst with electron backscatter diffraction. A general growth model is outlined that considers precursor dissociation, mass transport, and attachment to the edge of a growing domain. We thereby analyze graphene growth dynamics at different length scales and reveal that the rate-limiting step varies throughout the process and across different regions of the catalyst surface, including different facets of an individual graphene domain. The facets that define the domain shapes lie normal to slow growth directions, which are determined by the interfacial mobility when attachment to domain edges is rate-limiting, as well as anisotropy in surface diffusion as diffusion becomes rate-limiting. Our observations and analysis thus reveal that the structure of CVD graphene films is intimately linked to that of the underlying polycrystalline catalyst, with both interfacial mobility and diffusional anisotropy depending on the presence of step edges and grain boundaries. The growth model developed serves as a general framework for understanding and optimizing the growth of 2D materials on polycrystalline catalysts. PMID:27576749

  6. Grain-boundary-induced melting in quenched polycrystalline monolayers

    NASA Astrophysics Data System (ADS)

    Deutschländer, Sven; Boitard, Charlotte; Maret, Georg; Keim, Peter

    2015-12-01

    Melting in two dimensions can successfully be explained with the Kosterlitz-Thouless-Halperin-Nelson-Young (KTHNY) scenario which describes the formation of the high-symmetry phase with the thermal activation of topological defects within an (ideally) infinite monodomain. With all state variables being well defined, it should hold also as freezing scenario where oppositely charged topological defects annihilate. The Kibble-Zurek mechanism, on the other hand, shows that spontaneous symmetry breaking alongside a continuous phase transition cannot support an infinite monodomain but leads to polycrystallinity. For any nonzero cooling rate, critical fluctuations will be frozen out in the vicinity of the transition temperature. This leads to domains with different director of the broken symmetry, separated by a defect structure, e.g., grain boundaries in crystalline systems. After instantaneously quenching a colloidal monolayer from a polycrystalline to the isotropic fluid state, we show that such grain boundaries increase the probability for the formation of dislocations. In addition, we determine the temporal decay of defect core energies during the first few Brownian times after the quench. Despite the fact that the KTHNY scenario describes a continuous phase transition and phase equilibrium does not exist, melting in polycrystalline samples starts at grain boundaries similar to first-order phase transitions.

  7. Grain-boundary-induced melting in quenched polycrystalline monolayers.

    PubMed

    Deutschländer, Sven; Boitard, Charlotte; Maret, Georg; Keim, Peter

    2015-12-01

    Melting in two dimensions can successfully be explained with the Kosterlitz-Thouless-Halperin-Nelson-Young (KTHNY) scenario which describes the formation of the high-symmetry phase with the thermal activation of topological defects within an (ideally) infinite monodomain. With all state variables being well defined, it should hold also as freezing scenario where oppositely charged topological defects annihilate. The Kibble-Zurek mechanism, on the other hand, shows that spontaneous symmetry breaking alongside a continuous phase transition cannot support an infinite monodomain but leads to polycrystallinity. For any nonzero cooling rate, critical fluctuations will be frozen out in the vicinity of the transition temperature. This leads to domains with different director of the broken symmetry, separated by a defect structure, e.g., grain boundaries in crystalline systems. After instantaneously quenching a colloidal monolayer from a polycrystalline to the isotropic fluid state, we show that such grain boundaries increase the probability for the formation of dislocations. In addition, we determine the temporal decay of defect core energies during the first few Brownian times after the quench. Despite the fact that the KTHNY scenario describes a continuous phase transition and phase equilibrium does not exist, melting in polycrystalline samples starts at grain boundaries similar to first-order phase transitions.

  8. Hot pressing densification of spherical polycrystalline particles of superplastic zirconia

    NASA Astrophysics Data System (ADS)

    Auechalitanukul, Chiraporn

    The hot pressing behavior of spherical polycrystalline particle powder compacts which deform by particle creep was studied in order to determine the effect of particle size and packing density on the creep-controlled densification. A superplastic zirconia: 3 mole% yttria-stabilized tetragonal polycrystalline zirconia particles doped with 0.3 mole% alumina, was used in the study. The densification behavior of the spherical polycrystalline particles under applied pressures of 6, 10, 20 and 40 MPa at 1350°C was both experimentally studied and numerically simulated. The spherical polycrystalline particles of superplastic zirconia (particle size range between 30 and 90 microns) were hot pressed in a cylindrical die to near full theoretical density and without significant grain growth under 40 MPa at 1350°C for 1 hour. The densification rate during hot pressing of the spherical polycrystalline particles was not particle size dependent at the relatively high pressures of 20 and 40 MPa. The slight particle size dependence on the densification rate, observed at the relatively low pressures of 6 and 10 MPa, is thought to be due to the die wall friction. An increase in the particle packing density increased the final density and reduced the pressing time. Creep-based densification simulations using both the Helle, Eastering and Ashby equations for a powder compact and by a finite element analysis (FEA) of a single sphere compaction agreed well with the experimental observations. Densification rate vs. relative density curves predicted using the Helle, Easterling and Ashby equations were discontinuous at a relative density of 0.9 since two equations were used for the initial (a relative density up to 0.9) and final stage (a relative density from 0.9 to 1). The densification rate curves obtained using the FEA were continuous. Predictions of the two methods were similar until the relative density reached 0.9. Above a relative density of 0.9 the rates predicted by the FEA were

  9. Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988

    NASA Technical Reports Server (NTRS)

    Costogue, E. N.; Ferber, R.; Lutwack, R.; Lorenz, J. H.; Pellin, R.

    1984-01-01

    Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.

  10. Modeling and simulation of the deposition/relaxation processes of polycrystalline diatomic structures of metallic nitride films

    NASA Astrophysics Data System (ADS)

    García, M. F.; Restrepo-Parra, E.; Riaño-Rojas, J. C.

    2015-05-01

    This work develops a model that mimics the growth of diatomic, polycrystalline thin films by artificially splitting the growth into deposition and relaxation processes including two stages: (1) a grain-based stochastic method (grains orientation randomly chosen) is considered and by means of the Kinetic Monte Carlo method employing a non-standard version, known as Constant Time Stepping, the deposition is simulated. The adsorption of adatoms is accepted or rejected depending on the neighborhood conditions; furthermore, the desorption process is not included in the simulation and (2) the Monte Carlo method combined with the metropolis algorithm is used to simulate the diffusion. The model was developed by accounting for parameters that determine the morphology of the film, such as the growth temperature, the interacting atomic species, the binding energy and the material crystal structure. The modeled samples exhibited an FCC structure with grain formation with orientations in the family planes of < 111 >, < 200 > and < 220 >. The grain size and film roughness were analyzed. By construction, the grain size decreased, and the roughness increased, as the growth temperature increased. Although, during the growth process of real materials, the deposition and relaxation occurs simultaneously, this method may perhaps be valid to build realistic polycrystalline samples.

  11. Comparison of effective transverse piezoelectric coefficients e31,f of Pb(Zr,Ti)O3 thin films between direct and converse piezoelectric effects

    NASA Astrophysics Data System (ADS)

    Tsujiura, Yuichi; Kawabe, Saneyuki; Kurokawa, Fumiya; Hida, Hirotaka; Kanno, Isaku

    2015-10-01

    We evaluated the effective transverse piezoelectric coefficients (e31,f) of Pb(Zr,Ti)O3 (PZT) thin films from both the direct and converse piezoelectric effects of unimorph cantilevers. (001) preferentially oriented polycrystalline PZT thin films and (001)/(100) epitaxial PZT thin films were deposited on (111)Pt/Ti/Si and (001)Pt/MgO substrates, respectively, by rf-magnetron sputtering, and their piezoelectric responses owing to intrinsic and extrinsic effects were examined. The direct and converse |e31,f| values of the polycrystalline PZT thin films were calculated as 6.4 and 11.5-15.0 C/m2, respectively, whereas those of the epitaxial PZT thin films were calculated as 3.4 and 4.6-4.8 C/m2, respectively. The large |e31,f| of the converse piezoelectric property of the polycrystalline PZT thin films is attributed to extrinsic piezoelectric effects. Furthermore, the polycrystalline PZT thin films show a clear nonlinear piezoelectric contribution, which is the same as the Rayleigh-like behavior reported in bulk PZT. In contrast, the epitaxial PZT thin films on the MgO substrate show a piezoelectric response owing to the intrinsic and linear extrinsic effects, and no nonlinear contribution was observed.

  12. Processing and Characterization of Polycrystalline Yag (Yttrium Aluminum Garnet) Core-Clad Fibers - Postprint

    DTIC Science & Technology

    2015-01-01

    AFRL-RY-WP-TP-2014-0296 PROCESSING AND CHARACTERIZATION OF POLYCRYSTALLINE YAG ( YTTRIUM ALUMINUM GARNET) CORE-CLAD FIBERS -POSTPRINT...April 2013 – 1 April 2014 4. TITLE AND SUBTITLE PROCESSING AND CHARACTERIZATION OF POLYCRYSTALLINE YAG ( YTTRIUM ALUMINUM GARNET) CORE-CLAD FIBERS...of polycrystalline YAG ( Yttrium Aluminum Garnet) core-clad fibers Hyun Jun Kima,b, Geoff E. Faira*, Santeri A

  13. Influence of CuxS back contact on CdTe thin film solar cells

    NASA Astrophysics Data System (ADS)

    Zhi, Lei; Lianghuan, Feng; Guanggen, Zeng; Wei, Li; Jingquan, Zhang; Lili, Wu; Wenwu, Wang

    2013-01-01

    We present a detailed study on CuxS polycrystalline thin films prepared by chemical bath method and utilized as back contact material for CdTe solar cells. The characteristics of the films deposited on Si-substrate are studied by XRD. The results show that as-deposited CuxS thin film is in an amorphous phase while after annealing, samples are in polycrystalline phases with increasing temperature. The thickness of CuxS thin films has great impact on the performance of CdS/CdTe solar cells. When the thickness of the film is about 75 nm the performance of CdS/CdTe thin film solar cells is found to be the best. The energy conversion efficiency can be higher than 12.19%, the filling factor is higher than 68.82% and the open-circuit voltage is more than 820 mV.

  14. Review of thin film solar cell technology and applications for ultra-light spacecraft solar arrays

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.

    1991-01-01

    Developments in thin-film amorphous and polycrystalline photovoltaic cells are reviewed and discussed with a view to potential applications in space. Two important figures of merit are discussed: efficiency (i.e., what fraction of the incident solar energy is converted to electricity), and specific power (power to weight ratio).

  15. Patterning of Bi2Te3 Polycrystalline Thin-Films on Silicon

    DTIC Science & Technology

    2008-01-01

    Regia .” Since we desire to use photoresist as the masking material for process flexibility, we used a diluted version of Aqua Regia (3 HCl:1 HNO3...spin coat AZ5214e at 1200 rpm for 30 s, (2) soft bake at 110 °C for 60 s, (3) contact exposure for 3.3 s, (4) reverse -image bake at120 °C for 30 s...well as the metal pad. As an alternative, Shafai and Brett (5) used a diluted combination of HCl and nitric acid (HNO3), a variant of the common “ Aqua

  16. Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Liu, Yuan; Liu, Kai; Chen, Rong-Sheng; Liu, Yu-Rong; En, Yun-Fei; Li, Bin; Fang, Wen-Xiao

    2017-01-01

    Not Available Supported by the National Natural Science Foundation of China under Grant Nos 61574048 and 61204112, the Science and Technology Research Project of Guangdong Province under Grant Nos 2015B090912002 and 2014A030313656, and the Pearl River S&T Nova Program of Guangzhou.

  17. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report

    SciTech Connect

    Trefny, J.U.; Mao, D.

    1998-01-01

    During the past year, Colorado School of Mines (CSM) researchers performed systematic studies of the growth and properties of electrodeposition CdS and back-contact formation using Cu-doped ZnTe, with an emphasis on low Cu concentrations. CSM also started to explore the stability of its ZnTe-Cu contacted CdTe solar cells. Researchers investigated the electrodeposition of CdS and its application in fabricating CdTe/CdS solar cells. The experimental conditions they explored in this study were pH from 2.0 to 3.0; temperatures of 80 and 90 C; CdCl{sub 2} concentration of 0.2 M; deposition potential from {minus}550 to {minus}600 mV vs. Ag/AgCl electrode; [Na{sub 2}S{sub 2}O{sub 4}] concentration between 0.005 and 0.05 M. The deposition rate increases with increase of the thiosulfate concentration and decrease of solution pH. Researchers also extended their previous research of ZnTe:Cu films by investigating films doped with low Cu concentrations (< 5 at. %). The low Cu concentration enabled them to increase the ZnTe:Cu post-annealing temperature without causing excessive Cu diffusion into CdTe or formation of secondary phases. The effects of Cu doping concentration and post-deposition annealing temperature on the structural, compositional, and electrical properties of ZnTe were studied systematically using X-ray diffraction, atomic force microscopy, electron microprobe, Hall effect, and conductivity measurements.

  18. Unraveling Charge Carriers Generation, Diffusion, and Recombination in Formamidinium Lead Triiodide Perovskite Polycrystalline Thin Film.

    PubMed

    Piatkowski, Piotr; Cohen, Boiko; Ponseca, Carlito S; Salado, Manuel; Kazim, Samrana; Ahmad, Shahzada; Sundström, Villy; Douhal, Abderrazzak

    2016-01-07

    We report on studies of the formamidinium lead triiodide (FAPbI3) perovskite film using time-resolved terahertz (THz) spectroscopy (TRTS) and flash photolysis to explore charge carriers generation, migration, and recombination. The TRTS results show that upon femtosecond excitation above the absorption edge, the initial high photoconductivity (∼75 cm(2) V(-1) s(-1)) remains constant at least up to 8 ns, which corresponds to a diffusion length of 25 μm. Pumping below the absorption edge results in a mobility of 40 cm(2) V(-1) s(-1) suggesting lower mobility of charge carriers located at the bottom of the conduction band or shallow sub-bandgap states. Furthermore, analysis of the THz kinetics reveals rising components of <1 and 20 ps, reflecting dissociation of excitons having different binding energies. Flash photolysis experiments indicate that trapped charge carriers persist for milliseconds.

  19. Development of low cost thin film polycrystalline silicon solar cells for terrestrial applications

    NASA Technical Reports Server (NTRS)

    Chu, T. L.

    1975-01-01

    The AMO efficiencies (no anti-reflection coating) obtained to date are 2.5% for solar cells deposited on graphite substrates, 3.5% for solar cells deposited on metallurgical silicon substrates, and 4.5% for solar cells fabricated from purified metallurgical silicon.

  20. Research on polycrystalline thin film submodules based on CuInSe sub 2 materials

    SciTech Connect

    Catalano, A.; Arya, R.; Carr, L.; Fieselmann, B.; Lommasson, T.; Podlesny, R.; Russell, L.; Skibo, S.; Rothwarf, A.; Birkmire, R. )

    1992-05-01

    This report describes progress during the first year of a three-year research program to develop 12%-efficient CuInSe{sub 2} (CIS) submodules with area greater than 900 cm{sup 2}. To meet this objective, the program was divided into five tasks: (1) windows, contacts, substrates; (2) absorber material; (3) device structure; (4) submodule design and encapsulation; and (5) process optimization. In the first year of the program, work was concentrated on the first three tasks with an objective to demonstrate a 9%-efficient CIS solar cell. 7 refs.

  1. Improved Intrinsic Stability of CdTe Polycrystalline Thin Film Devices

    SciTech Connect

    Albin, D.; Berniard, T.; McMahon, T.; Noufi, R.; Demtsu, S.

    2005-01-01

    A systems-driven approach linking upstream solar cell device fabrication history with downstream performance and stability has been applied to CdS/CdTe small-area device research. The best resulting initial performance (using thinner CdS, thicker CdTe, no oxygen during VCC, and the use of NP etch) was shown to simultaneously correlate with poor stability. Increasing the CdS layer thickness significantly improved stability at only a slight decrease in overall performance. It was also determined that cell perimeter effects can accelerate degradation in these devices. A ''margined'' contact significantly reduces the contribution of edge shunting to degradation, and thus yields a more accurate determination of the intrinsic stability. Pspice discrete element models demonstrate how spatially localized defects can effectively dominate degradation. Mitigation of extrinsic shunting improved stabilized efficiency degradation levels (SEDL) to near 20% in 100 C tests. Further process optimization to reduce intrinsic effects improved SEDL to better than 10% at the same stress temperatures and times.

  2. Effect of thermal annealing on properties of polycrystalline ZnO thin films

    NASA Astrophysics Data System (ADS)

    Gritsenko, L. V.; Abdullin, Kh. A.; Gabdullin, M. T.; Kalkozova, Zh. K.; Kumekov, S. E.; Mukash, Zh. O.; Sazonov, A. Yu.; Terukov, E. I.

    2017-01-01

    Electrical properties (density, carriers mobility, resistivity), optical absorption and photoluminescence spectra of ZnO, grown by MOCVD and hydrothermal methods, have been investigated depending on the annealing and treatment modes in a hydrogen plasma. It has been shown that the electrical and photoluminescent (PL) properties of ZnO are strongly dependent on gas atmosphere during annealing. The annealing in oxygen atmosphere causes a sharp drop of carrier mobility and films conductivity due to the absorption of oxygen on grain boundaries. The process of ZnO electrical properties recovery by the thermal annealing in inert atmosphere (nitrogen), in oil (2×10-2 mbar) and oil-free (1×10-5 mbar) vacuum has been investigated. The hydrogen plasma treatment influence on the intensity of near-band-gap emission (NBE) has been studied. The effect of annealing and subsequent plasma treatment on PL intensity depends on the gas atmosphere of preliminary thermal annealing.

  3. [Research on the polycrystalline CdS thin films prepared by close-spaced sublimation].

    PubMed

    Yang, Ding-Yu; Xia, Geng-Pei; Zheng, Jia-Gui; Feng, Liang-Huan; Cai, Ya-Ping

    2009-01-01

    In the present paper, the factors of influence on the deposition rate of CdS films prepared by close-spaced sublimation (CSS) were first studied systematically, and it was found from the experiments that the deposition rate increased with the raised temperature of sublimation source, while decreased with the raised substrate temperature and the deposition pressure. The structure, morphology and light transmittance of the prepared samples were tested subsequently, and the results show: (1) The CdS films deposited under different oxygen partial pressure all present predominating growth lattice orientation (103), and further more the films will be strengthened after annealed under CdCl2 atmosphere. (2) The AFM images of CdS show that the films are compact and uniform in grain diameter, and the grain size becomes larger with the increased substrate temperature. Along with it, the film roughness was also augmented. (3) The transmittance in the shortwave region of visible light through the CdS films would be enhanced when its thickness is reduced, and that will help improve the shortwave spectral response of CdTe solar cells. Finally, the prepared CdS films were employed to fabricate CdTe solar cells, which have achieved a conversion efficiency of 10.29%, and thus the feasibility of CSS process in the manufacture of CdTe solar cells was validated primarily.

  4. Radiation-Induced Reduction of Ceria in Single and Polycrystalline Thin Films

    SciTech Connect

    Kumar, Amit; Devanathan, Ramaswami; Shutthanandan, V.; Kuchibhatla, Satyanarayana V N T; Karakoti, Ajay S.; Yang, Yong; Thevuthasan, Suntharampillai; Seal, Sudipta

    2012-01-12

    Ceria (CeO{sub 2}) is a technologically important ceramic material with a wide range of neoteric applications in catalysis, solid oxide fuel cells, oxygen gas sensors, hydrogen production, and ultraviolet shielding. Recent research has revealed promising biomedical applications of ceria. Nanoparticles of ceria have been shown to protect healthy cells from radiation-induced cellular damage. The mechanisms governing the radioprotection characteristics of ceria nanoparticles are not well understood and it has been hypothesized that reversible switching between Ce{sup 4+} and Ce{sup 3+} states may enable ceria nanoparticles to mop up free radicals.

  5. Polycrystalline lead selenide: the resurgence of an old infrared detector

    NASA Astrophysics Data System (ADS)

    Vergara, G.; Montojo, M. T.; Torquemada, M. C.; Rodrigo, M. T.; Sánchez, F. J.; Gómez, L. J.; Almazán, R. M.; Verdú, M.; Rodríguez, P.; Villamayor, V.; Álvarez, M.; Diezhandino, J.; Plaza, J.; Catalán, I.

    2007-06-01

    The existing technology for uncooled MWIR photon detectors based on polycrystalline lead salts is stigmatized for being a 50-year-old technology. It has been traditionally relegated to single-element detectors and relatively small linear arrays due to the limitations imposed by its standard manufacture process based on a chemical bath deposition technique (CBD) developed more than 40 years ago. Recently, an innovative method for processing detectors, based on a vapour phase deposition (VPD) technique, has allowed manufacturing the first 2D array of polycrystalline PbSe with good electro optical characteristics. The new method of processing PbSe is an all silicon technology and it is compatible with standard CMOS circuitry. In addition to its affordability, VPD PbSe constitutes a perfect candidate to fill the existing gap in the photonic and uncooled IR imaging detectors sensitive to the MWIR photons. The perspectives opened are numerous and very important, converting the old PbSe detector in a serious alternative to others uncooled technologies in the low cost IR detection market. The number of potential applications is huge, some of them with high commercial impact such as personal IR imagers, enhanced vision systems for automotive applications and other not less important in the security/defence domain such as sensors for active protection systems (APS) or low cost seekers. Despite the fact, unanimously accepted, that uncooled will dominate the majority of the future IR detection applications, today, thermal detectors are the unique plausible alternative. There is plenty of room for photonic uncooled and complementary alternatives are needed. This work allocates polycrystalline PbSe in the current panorama of the uncooled IR detectors, underlining its potentiality in two areas of interest, i.e., very low cost imaging IR detectors and MWIR fast uncooled detectors for security and defence applications. The new method of processing again converts PbSe into an

  6. Microstructure and texture analyses of polycrystalline ice during hot torsion

    NASA Astrophysics Data System (ADS)

    Journaux, B.; Montagnat, M.; Gest, L.; Barou, F.; Chauve, T.

    2015-12-01

    Water ice Ih is a material with very high plastic anisotropy where deformation is mainly accommodated by dislocation glide on the (0001) plane. This anisotropy gives rise to strong strain incompatibilities between grains during deformation, and therefore impacts texture and microstructure evolution. Accurate understanding of ice mechanical properties is significant for several areas of research such as glaciology, planetary sciences, but also in geosciences and metallurgy as ice can be seen as a model material with easier experimental handling at near melting temperatures. In the present study, we used torsion experiments to study non-coaxial shear strain (γ), very common in natural environments, up to very high values of γ. Numerous studies determined microstructure and texture evolution in polycrystalline assemblage submitted to torsion (metallic alloys and geological materials) but a very limited number focused on polycrystalline ice. Full cylinders of randomly oriented polycrystalline ice (grain size ~ 1 mm) were placed in a torsion apparatus and deformed under ductile regime under constant imposed torque at 266K (0.97 Tf). Macroscopic shear was monitored using a LVDT device or a rotary encoder. Several torsion tests with maximal shear strain up to γmax = 1 were performed. Tangent and axial sections were analyzed ex-situ using Automatic Ice Texture Analyzer (AITA) and Electron BackScatter Diffraction (EBSD). We were able to confirm the previously observed bimodal preferred orientation of the basal slip plane. Macroscopic strain evolution γ(t) displays a weakening after γmax = 0.04 (ɛmax ≃ 2 %), due to the beginning of dynamic recrystallization (DRX) processes. EBSD data provide novel informations on the microstructure that suggest very efficient grain boundary migration processes. In particular, we were able to measure differences of intra-granular misorientations density between the two ODF maxima populations that can highlight the role of DRX

  7. Conductive polycrystalline diamond probes for local anodic oxidation lithography

    NASA Astrophysics Data System (ADS)

    Ulrich, A. J.; Radadia, A. D.

    2015-11-01

    This is the first report characterizing local anodic oxidation (LAO) lithography performed using conductive monolithic polycrystalline diamond (MD) and conductive polycrystalline diamond-coated (DC) tips and comparing it to the diamond-like carbon-coated and metal-coated silicon tips. The range and the rate of increase in the lithographic linewidth and height with tip bias (dw/dV and dh/dV) differed based on the tip material. The DC tips resulted in wider and taller lines and a higher dw/dV and dh/dV compared to metal-coated tips with a similar force constant (k Avg). The metal-coated and the DC tips with comparable k Avg showed comparable threshold voltages, whereas the MD tips with similar k Avg showed a higher threshold voltage. The MD tips exhibited less than half the height and nearly half the dw/dV and dh/dV obtained with the metal-coated tips with similar k Avg, thus also resulting in a smaller width at -10 V. The linewidths were found to be proportional to the inverse of the log of write speed (v) for all the tips; however, the proportionality constant varied with tip material; the DC tips had larger values, and the MD and the metal-coated tips had comparable values. When varying the speed, the height was found to be a sigmoidal function of width, with the MD probes achieving lower height compared to the metal-coated and the DC tips with comparable k Avg. This study expands the application of monolithic conductive polycrystalline diamond (PCD) probes with outstanding wear resistance to fine LAO lithography.

  8. Conductive polycrystalline diamond probes for local anodic oxidation lithography.

    PubMed

    Ulrich, A J; Radadia, A D

    2015-11-20

    This is the first report characterizing local anodic oxidation (LAO) lithography performed using conductive monolithic polycrystalline diamond (MD) and conductive polycrystalline diamond-coated (DC) tips and comparing it to the diamond-like carbon-coated and metal-coated silicon tips. The range and the rate of increase in the lithographic linewidth and height with tip bias (dw/dV and dh/dV) differed based on the tip material. The DC tips resulted in wider and taller lines and a higher dw/dV and dh/dV compared to metal-coated tips with a similar force constant (k(Avg)). The metal-coated and the DC tips with comparable k(Avg) showed comparable threshold voltages, whereas the MD tips with similar k(Avg) showed a higher threshold voltage. The MD tips exhibited less than half the height and nearly half the dw/dV and dh/dV obtained with the metal-coated tips with similar k Avg, thus also resulting in a smaller width at -10 V. The linewidths were found to be proportional to the inverse of the log of write speed(v) for all the tips; however, the proportionality constant varied with tip material; the DC tips had larger values, and the MD and the metal-coated tips had comparable values. When varying the speed, the height was found to be a sigmoidal function of width, with the MD probes achieving lower height compared to the metal-coated and the DC tips with comparable k(Avg). This study expands the application of monolithic conductive polycrystalline diamond (PCD) probes with outstanding wear resistance to fine LAO lithography.

  9. Screen-Cage Ion Plating Of Silver On Polycrystalline Alumina

    NASA Technical Reports Server (NTRS)

    Spalvins, Talivaldis; Sliney, Harold E.; Deadmore, Daniel L.

    1995-01-01

    Screen-cage ion plating (SCIP) cost-effective technique offering high throwing power for deposition of adherent metal films on ceramic substrates. Applies silver films to complexly shaped substrates of polycrystalline alumina. Silver adheres tenaciously and reduces friction. SCIP holds promise for applying lubricating soft metallic films to high-temperature ceramic components of advanced combustion engines. Other potential uses include coating substrates with metal for protection against corrosion, depositing electrical conductors on dielectric substrates, making optically reflective or electrically or thermally conductive surface layers, and applying decorative metal coats to ceramic trophies or sculptures.

  10. Ultrafast carrier dynamics in polycrystalline bismuth telluride nanofilm

    SciTech Connect

    Jia, Lin; Ma, Weigang; Zhang, Xing

    2014-06-16

    In this study, the dynamics of energy carriers in polycrystalline bismuth telluride nanofilm are investigated by the ultrafast pump-probe method. The energy relaxation processes are quantitatively analyzed by using the numerical fitting models. The extracted hot carrier relaxation times of photon excitation, thermalization, and diffusion are around sub-picosecond. The initial reflectivity recovery is found to be dominantly determined by the carrier diffusion, electron-phonon coupling, and photo-generated carriers trapping processes. High-frequency and low-frequency oscillations are both observed and attributed to coherent optical phonons and coherent acoustic phonons, respectively.

  11. An acoustic emission study of plastic deformation in polycrystalline aluminium

    NASA Technical Reports Server (NTRS)

    Bill, R. C.; Frederick, J. R.; Felbeck, D. K.

    1979-01-01

    Acoustic emission experiments were performed on polycrystalline and single crystal 99.99% aluminum while undergoing tensile deformation. It was found that acoustic emission counts as a function of grain size showed a maximum value at a particular grain size. Furthermore, the slip area associated with this particular grain size corresponded to the threshold level of detectability of single dislocation slip events. The rate of decline in acoustic emission activity as grain size is increased beyond the peak value suggests that grain boundary associated dislocation sources are giving rise to the bulk of the detected acoustic emissions.

  12. Remobilization in the cratonic lithosphere recorded in polycrystalline diamond

    PubMed

    Jacob; Viljoen; Grassineau; Jagoutz

    2000-08-18

    Polycrystalline diamonds (framesites) from the Venetia kimberlite in South Africa contain silicate minerals whose isotopic and trace element characteristics document remobilization of older carbon and silicate components to form the framesites shortly before kimberlite eruption. Chemical variations within the garnets correlate with carbon isotopes in the diamonds, indicating contemporaneous formation. Trace element, radiogenic, and stable isotope variations can be explained by the interaction of eclogites with a carbonatitic melt, derived by remobilization of material that had been stored for a considerable time in the lithosphere. These results indicate more recent formation of diamonds from older materials within the cratonic lithosphere.

  13. Electron and Hole Trapping in Polycrystalline Metal Oxide Materials

    SciTech Connect

    Mckenna, Keith P.; Shluger, Alexander L.

    2011-07-08

    Electron and hole trapping by grain boundaries and dislocations in polycrystalline materials is important for wide ranging technological applications such as solar cells, microelectronics, photo-catalysts and rechargeable batteries. In this article, we first give an overview of the computational and methodological challenges involved in modelling such effects. This is followed by a discussion of two recent studies we have made on electron/hole trapping in wide gap insulators. The results suggest that such effects can be important for many applications which we discuss. These computationally demanding calculations have made extensive use of both the HPCx and HECToR services.

  14. The Effect of Crystal Orientation on Growth on Polycrystalline TNT,

    DTIC Science & Technology

    1980-05-01

    satisfactory mechanism to account for its occurrence [1,2]. Investigations carried out at Materials Research Laboratories have confirmed that growth of creamed...AD0A096 591 MATERIALS RESEARCH LABS ASCOT VALE (AUSTRALIA) F/G 20/ 2 THE EFFECT OF CRYSTAL ORIENTATION ON GROWTH ON POLYCRYSTALLINE -ETC(L MAT 80 W S...WILSON UNCLASSIFIED MRL-R775 N N R.-R-775 A/ R-002-156 DEPARTMENT OF DEFENCE DEFENCE SCIENCE AND TECHNOLOGY ORGANISATION MATERIALS RESEARCH

  15. Machining graphite composites with polycrystalline diamond end mills

    NASA Astrophysics Data System (ADS)

    Kohkonen, Kent E.; Anderson, Scott; Strong, A. B.

    One area of focus in developing light-strong materials has been the development of graphite/epoxy composites. The graphite/epoxy materials have created challenges in the area of fabrication and machining. The research objective was to determine if cutting tool material and style of cutting edge showed any significant differences in tool life. The cutting tool materials and cutter styles included helical carbide-end mills and straight and helical polycrystalline diamond-end mill cutters. The experimental design was developed using a fractional factorial design running twelve tests. Results were taken from cutting tool flank edge wear, composite part surface finish, and visual delamination of the part.

  16. Statistical thermodynamics of strain hardening in polycrystalline solids.

    PubMed

    Langer, J S

    2015-09-01

    This paper starts with a systematic rederivation of the statistical thermodynamic equations of motion for dislocation-mediated plasticity proposed in 2010 by Langer, Bouchbinder, and Lookman [Acta Mat. 58, 3718 (2010)ACMAFD1359-645410.1016/j.actamat.2010.03.009]. It then uses that theory to explain the anomalous rate-hardening behavior reported in 1988 by Follansbee and Kocks and to explore the relation between hardening rate and grain size reported in 1995 by Meyers et al. A central theme is the need for physics-based, nonequilibrium analyses in developing predictive theories of the strength of polycrystalline materials.

  17. Polycrystalline silicon optical fibers with atomically smooth surfaces.

    PubMed

    Healy, Noel; Lagonigro, Laura; Sparks, Justin R; Boden, Stuart; Sazio, Pier J A; Badding, John V; Peacock, Anna C

    2011-07-01

    We investigate the surface roughness of polycrystalline silicon core optical fibers fabricated using a high-pressure chemical deposition technique. By measuring the optical transmission of two fibers with different core sizes, we will show that scattering from the core-cladding interface has a negligible effect on the losses. A Zemetrics ZeScope three-dimensional optical profiler has been used to directly measure the surface of the core material, confirming a roughness of only ~0.1 nm. The ability to fabricate low-loss polysilicon optical fibers with ultrasmooth cores scalable to submicrometer dimensions should establish their use in a range of nonlinear optical applications.

  18. PDC (polycrystalline diamond compact) bit research at Sandia National Laboratories

    SciTech Connect

    Finger, J.T.; Glowka, D.A.

    1989-06-01

    From the beginning of the geothermal development program, Sandia has performed and supported research into polycrystalline diamond compact (PDC) bits. These bits are attractive because they are intrinsically efficient in their cutting action (shearing, rather than crushing) and they have no moving parts (eliminating the problems of high-temperature lubricants, bearings, and seals.) This report is a summary description of the analytical and experimental work done by Sandia and our contractors. It describes analysis and laboratory tests of individual cutters and complete bits, as well as full-scale field tests of prototype and commercial bits. The report includes a bibliography of documents giving more detailed information on these topics. 26 refs.

  19. Scattering of ultrasound by minority phases in polycrystalline metals

    NASA Astrophysics Data System (ADS)

    Sayers, C. M.

    1984-01-01

    The scattering of ultrasound by minority phases in polycrystalline metals is discussed. For discrete inclusions, the scattering theory of Ying and Truell describes the attenuation of longitudinal waves. This is demonstrated by comparison with experiments of Papadakis for graphite particles in modular cast iron. To treat the scattering by a second phase formed by segregation at a grain boundary, the scattering by a spherical shell with density and elastic constants different from those of the surrounding medium is developed. Reflection of ultrasound at this boundary is found to enhance the attenuation at low frequencies. Application is made to the scattering by manganese sulphide in free machining steel.

  20. Valley Filtering and Electronic Optics Using Polycrystalline Graphene

    NASA Astrophysics Data System (ADS)

    Nguyen, V. Hung; Dechamps, S.; Dollfus, P.; Charlier, J.-C.

    2016-12-01

    In this Letter, both the manipulation of valley-polarized currents and the optical-like behaviors of Dirac fermions are theoretically explored in polycrystalline graphene. When strain is applied, the misorientation between two graphene domains separated by a grain boundary can result in a mismatch of their electronic structures. Such a discrepancy manifests itself in a strong breaking of the inversion symmetry, leading to perfect valley polarization in a wide range of transmission directions. In addition, these graphene domains act as different media for electron waves, offering the possibility to modulate and obtain negative refraction indexes.

  1. Statistical thermodynamics of strain hardening in polycrystalline solids

    DOE PAGES

    Langer, James S.

    2015-09-18

    This paper starts with a systematic rederivation of the statistical thermodynamic equations of motion for dislocation-mediated plasticity proposed in 2010 by Langer, Bouchbinder, and Lookman. The paper then uses that theory to explain the anomalous rate-hardening behavior reported in 1988 by Follansbee and Kocks and to explore the relation between hardening rate and grain size reported in 1995 by Meyers et al. A central theme is the need for physics-based, nonequilibrium analyses in developing predictive theories of the strength of polycrystalline materials.

  2. Polycrystalline diamond based detector for Z-pinch plasma diagnosis.

    PubMed

    Liu, Linyue; Ouyang, Xiaoping; Zhao, Jizhen; Chen, Liang; Wang, Lan

    2010-08-01

    A detector setup based on polycrystalline chemical-vapor-deposition diamond film is developed with great characteristics: low dark current (lower than 60 pA within 3 V/mum), fast pulsed response time (rise time: 2-3 ns), flat spectral response (3-5 keV), easy acquisition, low cost, and relative large sensitive area. The characterizing data on Qiangguang-I accelerator show that this detector can satisfy the practical requirements in Z-pinch plasma diagnosis very well, which offers a promising prototype for the x-ray detection in Z-pinch diagnosis.

  3. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    NASA Technical Reports Server (NTRS)

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  4. Emission of nuclear quadrupole resonance from polycrystalline hexamethylenetetramine.

    PubMed

    Ota, G; Itozaki, H

    2008-03-01

    The angular dependence of the nuclear quadrupole resonance (NQR) signal intensity emitted from polycrystalline hexamethylenetetramine has been analytically investigated for all directions for non-contact detection of chemicals by nuclear quadrupole resonance. The field pattern of the NQR signal from a column sample was measured. The emitted patterns were the same as that from a united single magnetic dipole, which fitted well to the estimation based on quadrupole principle axis system. This result is helpful to design an antenna for NQR remote detection.

  5. Penetration and lateral diffusion characteristics of polycrystalline graphene barriers.

    PubMed

    Yoon, Taeshik; Mun, Jeong Hun; Cho, Byung Jin; Kim, Taek-Soo

    2014-01-07

    We report penetration and lateral diffusion behavior of environmental molecules on synthesized polycrystalline graphene. Penetration occurs through graphene grain boundaries resulting in local oxidation. However, when the penetrated molecules diffuse laterally, the oxidation region will expand. Therefore, we measured the lateral diffusion rate along the graphene-copper interface for the first time by the environment-assisted crack growth test. It is clearly shown that the lateral diffusion is suppressed due to the high van der Waals interaction. Finally, we employed bilayer graphene for a perfect diffusion barrier facilitated by decreased defect density and increased lateral diffusion path.

  6. Record low temperature Mo doped V2O5 thermochromic thin films for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Nazemiyan, M.; Jalili, Y. S.

    2013-11-01

    Thermochromic properties of polycrystalline molybdenum doped vanadium pentoxide thin films grown by the spray pyrolysis technique were investigated. Tetragonal thin film structures of this system are grown. The transmittance spectral analysis with temperature indicates a record semiconductor-metal transition temperature of < 50oC. This critical temperature is approximately 1/3 to 1/6 of magnitude expected for V2O5 thin films. The resistance of the thermochromic thin film also underwent a transition or phase change as expected, a reduction from more than few mega ohms to less than kilo ohm regime indicating potential applications in optoelectronics.

  7. RF Surface Impedance Measurement of Polycrystalline and Large Grain Nb Disk Sample at 7.5 GHz

    SciTech Connect

    Xiao, Binping; Geng, Rongli; Kelley, Michael J.; Marhauser, Frank; Phillips, H. Larry; Reece, Charles E.; Wang, Haipeng

    2009-11-01

    A Surface Impedance Characterization (SIC) system has been proposed at the 2005 SRF workshop and recently updated as detailed at the 2009 PAC conference. Currently the SIC system can measure samples in a temperature range from 2K to 20K exposed to an RF magnetic flux density of less than 3mT. We report on new results of a BCP etched large grain Nb sample measured with this system as compared with previous results of a BCP etched polycrystalline Nb sample. The design of an upgraded SIC system for use at higher magnetic flux densities is on the way to more efficiently investigate correlations between local material characteristics and associated SRF properties, both for preparation studies of bulk niobium and also new thin film SRF developments.

  8. Enhanced broadband and omni-directional performance of polycrystalline Si solar cells by using discrete multilayer antireflection coatings.

    PubMed

    Oh, Seung Jae; Chhajed, Sameer; Poxson, David J; Cho, Jaehee; Schubert, E Fred; Tark, Sung Ju; Kim, Donghwan; Kim, Jong Kyu

    2013-01-14

    The performance enhancement of polycrystalline Si solar cells by using an optimized discrete multilayer anti-reflection (AR) coating with broadband and omni-directional characteristics is presented. Discrete multilayer AR coatings are optimized by a genetic algorithm, and experimentally demonstrated by refractive-index tunable SiO₂ nano-helix arrays and co-sputtered (SiO₂)x(TiO₂)₁₋x thin film layers. The optimized multilayer AR coating shows a reduced total reflection, leading to the high incident-photon-to-electron conversion efficiency over a correspondingly wide range of wavelengths and incident angles, offering a very promising way to harvest more solar energy by virtually any type of solar cells for a longer time of a day.

  9. Charged grain boundaries reduce the open-circuit voltage of polycrystalline solar cells—An analytical description

    NASA Astrophysics Data System (ADS)

    Gaury, Benoit; Haney, Paul M.

    2016-12-01

    Analytical expressions are presented for the dark current-voltage relation J(V) of a pn+ junction with positively charged columnar grain boundaries with high defect density. These expressions apply to non-depleted grains with sufficiently high bulk hole mobilities. The accuracy of the formulas is verified by direct comparison to numerical simulations. Numerical simulations further show that the dark J(V) can be used to determine the open-circuit potential Voc of an illuminated junction for a given short-circuit current density Jsc . A precise relation between the grain boundary properties and Voc is provided, advancing the understanding of the influence of grain boundaries on the efficiency of thin film polycrystalline photovoltaics like CdTe and Cu(In,Ga)Se2 .

  10. Imaging Long-Range Carrier Diffusion Across Grains in Polycrystalline CdTe

    NASA Astrophysics Data System (ADS)

    Alberi, Kirstin; Fluegel, Brian; Moutinho, Helio; Dhere, Ramesh; Li, Jian; Mascarenhas, Angelo

    2014-03-01

    The use of polycrystalline semiconductors in electronic devices enables low cost fabrication on large area substrates. Understanding the extent to which structural defects and impurities influence carrier transport in these materials is increasingly important as device performance is maximized, but most conventional characterization techniques often cannot directly probe their effects. We have applied a novel photoluminescence imaging technique to directly observe carrier diffusion in the presence of grain boundaries and impurities in poly-CdTe films. Our results show that the grain boundaries in this material are relatively transparent to free carrier and exciton diffusion as compared to poly-GaAs. Furthermore, a network of inhomogeneously distributed impurity states is found to mediate hole transport across multiple grains to distances greater than 10 microns from the point of photogeneration. These results underscore the importance of controlling the concentration and distribution of impurity states in poly-CdTe thin film solar cells. This work was supported by the DOE Office of Science, Basic Energy Sciences (PL imaging development) and the Office of Energy Efficiency and Renewable Energy (CdTe study) under contract DE-AC36-08GO28308.

  11. Nanoscale Imaging of Band Gap and Defects in Polycrystalline CdTe Photovoltaic Devices

    NASA Astrophysics Data System (ADS)

    Zhitenev, Nikolai; Yoon, Yohan; Chae, Jungseok; Katzenmeyer, Aaron; Yoon, Heayoung; An, Sangmin; Shumacher, Joshua; Centrone, Andrea

    To further increase the power efficiency of polycrystalline thin film photovoltaic (PV) technology, a detailed understanding of microstructural properties of the devices is required. In this work, we investigate the microstructure of CdTe PV devices using two optical spectroscopies. Sub-micron thickness lamella samples were cut out from a PV device, either in cross-section or in-plane, by focused ion beam. The first technique is the photothermal induced resonance (PTIR) used to obtain absorption spectra over a broad range of wavelengths. In PTIR, a wavelength tunable pulsed laser is combined with an atomic force microscope to detect the local thermal expansion of lamella CdTe sample induced by light absorption. The second technique based on a near-field scanning optical microscope maps the local absorption at fixed near-IR wavelengths with energies at or below CdTe band-gap energy. The variation of the band gap throughout the CdTe absorber determined from PTIR spectra is ~ 20 meV. Both techniques detect strong spatial variation of shallow defects over different grains. The spatial distribution of mid-gap defects appears to be more uniform. The resolution, the sensitivity and the applicability of these two approaches are compared.

  12. Deposition of polycrystalline and nanocrystalline diamond on graphite: effects of surface pre-treatments

    NASA Astrophysics Data System (ADS)

    Villalpando, I.; John, P.; Porro, S.; Wilson, J. I. B.

    2017-03-01

    The growth of hydrogenated sp3-phase of diamond on the sp2-phase of graphite by Microwave Plasma Enhanced Chemical Vapour Deposition (MPECVD) is a challenge, primarily because hydrogen etches graphite much faster than the growth rate of diamond. To enhance nucleation of diamond on graphite, we used a plethora of techniques such as plasma etching, ion bombardment, manual scratching, and scratching by ultrasonic agitation. Nanocrystalline and polycrystalline diamond thin-films were grown by MPECVD on the surface of pre-treated or pristine graphite using 1.5, 3.0, and 3.6 kW microwave power. Samples were characterised by Scanning Electron Microscopy, Raman Spectroscopy, and X-ray Photoelectron Spectroscopy. Species in the gas phase during film deposition were monitored by Optical Emission Spectroscopy. We have found that the surface area covered and the morphology of the diamond films are dependent on the surface pre-treatment. The crystallite size of the films depends on the microwave power used during MPECVD growth. The results of this study establish the protocols for diamond deposition by MPECVD on graphite substrates with a desired crystalline quality based on the pre-treatment of the substrate and the microwave power used during MPECVD. These results are important to modern applications, such as plasma facing materials, in which diamond has shown outstanding performance in contrast to that of graphite.

  13. Highly (0001)-oriented Al-doped ZnO polycrystalline films on amorphous glass substrates

    NASA Astrophysics Data System (ADS)

    Nomoto, Junichi; Inaba, Katsuhiko; Osada, Minoru; Kobayashi, Shintaro; Makino, Hisao; Yamamoto, Tetsuya

    2016-09-01

    Very thin aluminum-doped zinc oxide (AZO) films with a well-defined (0001) orientation and a surface roughness of 0.357 nm were deposited on amorphous glass substrates at a temperature of 200 °C by radio frequency magnetron sputtering, which are promising, particularly in terms of orientation evolution, surface roughness, and carrier transport, as buffer layers for the subsequent deposition of highly (0001)-oriented AZO polycrystalline films of 490 nm thickness by direct current (DC) magnetron sputtering. Sintered AZO targets with an Al2O3 content of 2.0 wt. % were used. DC magnetron sputtered AZO films on bare glass substrates showed a mixed (0001) and the others crystallographic orientation, and exhibited a high contribution of grain boundary scattering to carrier transport, resulting in reduced Hall mobility. Optimizing the thickness of the AZO buffer layers to 10 nm led to highly (0001)-oriented bulk AZO films with a marked reduction in the above contribution, resulting in AZO films with improved Hall mobility together with enhanced carrier concentration. The surface morphology and point defect density were also improved by applying the buffer layers, as shown by atomic force microscopy and Raman spectroscopy, respectively.

  14. Relaxation in photo-induced conductivity of polycrystalline BiFeO3 film

    NASA Astrophysics Data System (ADS)

    Peng, Zengwei; Liu, Baoting

    2015-08-01

    Polycrystalline BiFeO3 (BFO) film is deposited on Pt(1 1 1)/Ti/SiO2/Si(0 0 1) substrate via magnetron sputtering. Integrated Pt/SrRuO3 (SRO) are used to be top electrode to produce the Pt/SRO/BFO/Pt thin film capacitor. The remanent polarization is 59.5, 69.3, 77 and 89.8 μC/cm2 measured at 22.5, 25, 27.5 and 30 V, respectively. The photoconductivity is reported in BFO film under the illumination by the 5 mW/cm2 purple light of 404 nm. It is found that the leakage current density in purple light displays the tendency of decline with the increased illumination times, which can be explained by the recombination and capture of the photo-induced charges by the ionized vacancies. The relaxation time for the illuminated leakage current density reaching the steady state is 210 and 570 s at positive and negative bias, respectively. The obtained large relaxation time at negative bias is considered to be that negative bias is in the same direction as the SRO/BFO interface field.

  15. Performance of in-pixel circuits for photon counting arrays (PCAs) based on polycrystalline silicon TFTs.

    PubMed

    Liang, Albert K; Koniczek, Martin; Antonuk, Larry E; El-Mohri, Youcef; Zhao, Qihua; Street, Robert A; Lu, Jeng Ping

    2016-03-07

    Photon counting arrays (PCAs), defined as pixelated imagers which measure the absorbed energy of x-ray photons individually and record this information digitally, are of increasing clinical interest. A number of PCA prototypes with a 1 mm pixel-to-pixel pitch have recently been fabricated with polycrystalline silicon (poly-Si)-a thin-film technology capable of creating monolithic imagers of a size commensurate with human anatomy. In this study, analog and digital simulation frameworks were developed to provide insight into the influence of individual poly-Si transistors on pixel circuit performance-information that is not readily available through empirical means. The simulation frameworks were used to characterize the circuit designs employed in the prototypes. The analog framework, which determines the noise produced by individual transistors, was used to estimate energy resolution, as well as to identify which transistors contribute the most noise. The digital framework, which analyzes how well circuits function in the presence of significant variations in transistor properties, was used to estimate how fast a circuit can produce an output (referred to as output count rate). In addition, an algorithm was developed and used to estimate the minimum pixel pitch that could be achieved for the pixel circuits of the current prototypes. The simulation frameworks predict that the analog component of the PCA prototypes could have energy resolution as low as 8.9% full width at half maximum (FWHM) at 70 keV; and the digital components should work well even in the presence of significant thin-film transistor (TFT) variations, with the fastest component having output count rates as high as 3 MHz. Finally, based on conceivable improvements in the underlying fabrication process, the algorithm predicts that the 1 mm pitch of the current PCA prototypes could be reduced significantly, potentially to between ~240 and 290 μm.

  16. Performance of in-pixel circuits for photon counting arrays (PCAs) based on polycrystalline silicon TFTs

    NASA Astrophysics Data System (ADS)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Street, Robert A.; Lu, Jeng Ping

    2016-03-01

    Photon counting arrays (PCAs), defined as pixelated imagers which measure the absorbed energy of x-ray photons individually and record this information digitally, are of increasing clinical interest. A number of PCA prototypes with a 1 mm pixel-to-pixel pitch have recently been fabricated with polycrystalline silicon (poly-Si)—a thin-film technology capable of creating monolithic imagers of a size commensurate with human anatomy. In this study, analog and digital simulation frameworks were developed to provide insight into the influence of individual poly-Si transistors on pixel circuit performance—information that is not readily available through empirical means. The simulation frameworks were used to characterize the circuit designs employed in the prototypes. The analog framework, which determines the noise produced by individual transistors, was used to estimate energy resolution, as well as to identify which transistors contribute the most noise. The digital framework, which analyzes how well circuits function in the presence of significant variations in transistor properties, was used to estimate how fast a circuit can produce an output (referred to as output count rate). In addition, an algorithm was developed and used to estimate the minimum pixel pitch that could be achieved for the pixel circuits of the current prototypes. The simulation frameworks predict that the analog component of the PCA prototypes could have energy resolution as low as 8.9% full width at half maximum (FWHM) at 70 keV; and the digital components should work well even in the presence of significant thin-film transistor (TFT) variations, with the fastest component having output count rates as high as 3 MHz. Finally, based on conceivable improvements in the underlying fabrication process, the algorithm predicts that the 1 mm pitch of the current PCA prototypes could be reduced significantly, potentially to between ~240 and 290 μm.

  17. Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

    NASA Astrophysics Data System (ADS)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

    2014-03-01

    The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

  18. Current Transport with and Without Grain-Boundary Recombination for Polycrystalline Copper Indium SELENIUM(2) Solar Cells

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoxiang

    The relatively low efficiency of thin-film polycrystalline solar cells compared to the crystalline cells results in part from grain-boundary recombination. This recombination can enhance the forward current of solar cells and can severely limit the photovoltaic parameters. A model of minority-carrier transport mechanism with grain-boundary recombination has been developed and compared with the non-grain boundary situation for polycrystalline thin-film CuInSe_2 solar cells. The model is based on the self-consistent determination of barrier height, effective grain-boundary recombination velocity, and recombination rate. To get a physically reasonable effective grain-boundary recombination velocity, the quasi -Fermi level of the electrons must be allowed to vary with distance in the grain-boundary space-charge region. For typical CuInSe_2 cells, grain-boundary effects are small and can be neglected when grain-boundary trap density is below 5 times 10 ^{11} cm^ {-2}. When trap density is above 10 ^{12} cm^{ -2}, however, the grain-boundary recombination is comparable or even larger than the p-n junction space -charge region recombination. The calculated current-voltage characteristics both with and without grain-boundary recombination are compared with temperature-dependent light and dark experimental results for three CuInSe_2 cells which were fabricated by different groups using different deposition methods. The results show that the calculations without grain-boundary recombination can adequately fit experimental data for cells with relatively small forward -current density. For cells with larger forward-current density, however, inclusion of grain-boundary effects is necessary to match the experimental results. When light forward-current density is extremely high, the calculations both with and without grain-boundary effects fail to fit the experimental I-V curves. In this situation, the grain -boundary effects on current generation may have to be considered.

  19. Surface roughness measurements of micromachined polycrystalline silicon films

    NASA Astrophysics Data System (ADS)

    Phinney, L. M.; Lin, G.; Wellman, J.; Garcia, A.

    2004-07-01

    The characteristics of the materials and surfaces in microelectromechanical systems (MEMS) and microsystems technology (MST) profoundly affect the performance, reliability, and wear of MEMS and MST devices. It is critical to measure the properties of surfaces that are in contact during microstructure movement, such as the underside of a MEMS gear and the underlying substrate. However, contacting surfaces are usually inaccessible unless the MEMS device is broken and removed from the substrate. This paper presents a nondestructive method for characterizing commercially fabricated surface micromachined polycrystalline silicon (polysilicon) devices. Microhinged flaps were designed that enable access to the upper surface, the part of a structural layer deposited last; the lower surface, the part of a structural layer deposited first; and the underlying substrate. Due to the susceptibility of surface-micromachined MEMS to adhesion failures, the surface roughness is a key parameter for predicting device behavior. Using the microhinged flaps, the RMS surface roughness for polycrystalline surfaces was measured and indicated that the upper surfaces were 3.5-6.4 times rougher than the lower surfaces. The difference in the surface roughness for the upper surface, which is easily accessed and the one most commonly characterized, and that for the lower surface reveals the importance of characterizing contacting surfaces in MEMS and MST devices.

  20. GaAs Photovoltaics on Polycrystalline Ge Substrates

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

    2007-01-01

    High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

  1. Creep and stress relaxation modeling of polycrystalline ceramic fibers

    NASA Technical Reports Server (NTRS)

    Dicarlo, James A.; Morscher, Gregory N.

    1994-01-01

    A variety of high performance polycrystalline ceramic fibers are currently being considered as reinforcement for high temperature ceramic matrix composites. However, under mechanical loading about 800 C, these fibers display creep related instabilities which can result in detrimental changes in composite dimensions, strength, and internal stress distributions. As a first step toward understanding these effects, this study examines the validity of a mechanism-based empirical model which describes primary stage tensile creep and stress relaxation of polycrystalline ceramic fibers as independent functions of time, temperature, and applied stress or strain. To verify these functional dependencies, a simple bend test is used to measure stress relaxation for four types of commercial ceramic fibers for which direct tensile creep data are available. These fibers include both nonoxide (SCS-6, Nicalon) and oxide (PRD-166, FP) compositions. The results of the Bend Stress Relaxation (BSR) test not only confirm the stress, time, and temperature dependencies predicted by the model, but also allow measurement of model empirical parameters for the four fiber types. In addition, comparison of model tensile creep predictions based on the BSR test results with the literature data show good agreement, supporting both the predictive capability of the model and the use of the BSR text as a simple method for parameter determination for other fibers.

  2. Collective dynamics underpins Rayleigh behavior in disordered polycrystalline ferroelectrics

    PubMed Central

    Bintachitt, P.; Jesse, S.; Damjanovic, D.; Han, Y.; Reaney, I. M.; Trolier-McKinstry, S.; Kalinin, S. V.

    2010-01-01

    Nanoscale and mesoscopic disorder and associated local hysteretic responses underpin the unique properties of spin and cluster glasses, phase-separated oxides, polycrystalline ferroelectrics, and ferromagnets alike. Despite the rich history of the field, the relationship between the statistical descriptors of hysteresis behavior such as Preisach density, and micro and nanostructure has remained elusive. By using polycrystalline ferroelectric capacitors as a model system, we now report quantitative nonlinearity measurements in 0.025–1 μm3 volumes, approximately 106 times smaller than previously possible. We discover that the onset of nonlinear behavior with thickness proceeds through formation and increase of areal density of micron-scale regions with large nonlinear response embedded in a more weakly nonlinear matrix. This observation indicates that large-scale collective domain wall dynamics, as opposed to motion of noninteracting walls, underpins Rayleigh behavior in disordered ferroelectrics. The measurements provide evidence for the existence and extent of the domain avalanches in ferroelectric materials, forcing us to rethink 100-year old paradigms. PMID:20368462

  3. Observations of Dynamic Strain Aging in Polycrystalline NiAl

    NASA Technical Reports Server (NTRS)

    Weaver, M. L.; Noebe, R. D.; Kaufman, M. J.

    1996-01-01

    Dynamic strain aging has been investigated at temperatures between 77 and 1100 K in eight polycrystalline NiAl alloys. The 0.2% offset yield stress and work hardening rates for these alloys generally decreased with increasing temperature. However, local plateaus or maxima were observed in conventional purity and carbon doped alloys at intermediate temperatures (600-900 K). This anomalous behavior was not observed in low interstitial high-purity, nitrogen doped, or in titanium doped materials. Low or negative strain rate sensitivities (SRS) were also observed in all eight alloys in this intermediate temperature range. Coincident with the occurrence of negative SRS was the occurrence of serrated flow in conventional purity alloys containing high concentrations of Si in addition to C. These phenomena have been attributed to dynamic strain aging (DSA). Chemical analysis of the alloys used in this study suggests that the main species causing strain aging in polycrystalline NiAl is C but indicate that residual Si impurities can enhance the strain aging effect.

  4. Origins of Folding Instabilities on Polycrystalline Metal Surfaces

    NASA Astrophysics Data System (ADS)

    Beckmann, N.; Romero, P. A.; Linsler, D.; Dienwiebel, M.; Stolz, U.; Moseler, M.; Gumbsch, P.

    2014-12-01

    Wear and removal of material from polycrystalline metal surfaces is inherently connected to plastic flow. Here, plowing-induced unconstrained surface plastic flow on a nanocrystalline copper surface has been studied by massive molecular dynamics simulations and atomic force microscopy scratch experiments. In agreement with experimental findings, bulges in front of a model asperity develop into vortexlike fold patterns that mark the disruption of laminar flow. We identify dislocation-mediated plastic flow in grains with suitably oriented slip systems as the basic mechanism of bulging and fold formation. The observed folding can be fundamentally explained by the inhomogeneity of plasticity on polycrystalline surfaces which favors bulge formation on grains with suitably oriented slip system. This process is clearly distinct from Kelvin-Helmholtz instabilities in fluids, which have been previously suggested to resemble the formed surface fold patterns. The generated prow grows into a rough chip with stratified lamellae that are identified as the precursors of wear debris. Our findings demonstrate the importance of surface texture and grain structure engineering to achieve ultralow wear in metals.

  5. Limiting mechanisms in large-grain polycrystalline silicon Spatial homogeneity

    NASA Technical Reports Server (NTRS)

    Culik, J.; Grimes, K.

    1984-01-01

    An experiment to investigate the spatial homogeneity of large-grain polycrystalline silicon shows a number of performance-loss mechanisms. Arrays of up to 400 small (about 0.2 sq cm in area) photodiodes were fabricated on a selection of 10 cm x 10 cm polycrystalline silicon wafers. Measurements of the illuminated current-voltage (J-V) characteristics were used to generate maps of Voc, Jsc, and FF as a function of position; and dark J-V and LBIC analysis were used to determine the cause of low performance in areas with significantly degraded J-V characteristics. In addition to the presence of inclusions, which act as resistive shunts, the performance of many of the cells is limited by quasineutral recombination current, which may vary by up to an order of magnitude across a wafer. The increase is the result of either electrically-active grain boundaries or numerous subgrain boundaries within the grain bulk. In other isolated instances, the open-circuit voltage is reduced by excess space-charge recombination current that is not correlated with either grain or subgrain boundary activity.

  6. Penetration and lateral diffusion characteristics of polycrystalline graphene barriers

    NASA Astrophysics Data System (ADS)

    Yoon, Taeshik; Mun, Jeong Hun; Cho, Byung Jin; Kim, Taek-Soo

    2013-12-01

    We report penetration and lateral diffusion behavior of environmental molecules on synthesized polycrystalline graphene. Penetration occurs through graphene grain boundaries resulting in local oxidation. However, when the penetrated molecules diffuse laterally, the oxidation region will expand. Therefore, we measured the lateral diffusion rate along the graphene-copper interface for the first time by the environment-assisted crack growth test. It is clearly shown that the lateral diffusion is suppressed due to the high van der Waals interaction. Finally, we employed bilayer graphene for a perfect diffusion barrier facilitated by decreased defect density and increased lateral diffusion path.We report penetration and lateral diffusion behavior of environmental molecules on synthesized polycrystalline graphene. Penetration occurs through graphene grain boundaries resulting in local oxidation. However, when the penetrated molecules diffuse laterally, the oxidation region will expand. Therefore, we measured the lateral diffusion rate along the graphene-copper interface for the first time by the environment-assisted crack growth test. It is clearly shown that the lateral diffusion is suppressed due to the high van der Waals interaction. Finally, we employed bilayer graphene for a perfect diffusion barrier facilitated by decreased defect density and increased lateral diffusion path. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr03849a

  7. Concurrent atomistic-continuum simulation of polycrystalline strontium titanate

    NASA Astrophysics Data System (ADS)

    Yang, Shengfeng; Zhang, Ning; Chen, Youping

    2015-08-01

    This paper presents the new development of a concurrent atomistic-continuum (CAC) method in simulation of the dynamic evolution of defects in polycrystalline polyatomic materials. The CAC method is based on a theoretical formulation that extends Kirkwood's statistical mechanical theory of transport processes to a multiscale description of crystalline materials. It solves for both the deformation of lattice cells and the internal deformation within each lattice cell, making it a suitable method for simulations of polyatomic materials. The simulation results of this work demonstrate that CAC can simulate the nucleation of dislocations and cracks from atomistically resolved grain boundary (GB) regions and the subsequent propagation into coarsely meshed grain interiors in polycrystalline strontium titanate without the need of supplemental constitutive equations or additional numerical treatments. With a significantly reduced computational cost, CAC predicts not only the GB structures, but also the dynamic behaviour of dislocations, cracks and GBs, all of which are comparable with those obtained from atomic-level molecular dynamics simulations. Simulation results also show that dislocations tend to initiate from GBs and triple junctions. The angle between the slip planes and the GB planes plays a key role in determining the GB-dislocation reactions.

  8. On the Hugoniot elastic limit in polycrystalline alumina

    NASA Astrophysics Data System (ADS)

    Bourne, N. K.; Millett, J. C. F.; Chen, M.; McCauley, J. W.; Dandekar, D. P.

    2007-10-01

    The use of polycrystalline ceramics in engineering applications requires a better knowledge of microstructural response than exists at present. The continuum response of the alumina AD995 to shock loading has been extensively investigated. This work aims to connect microstructural response with continuum observations. Over recent years, workers have reported failure in various polycrystalline ceramics occurring behind a propagating front running behind the shock. These phenomena have been investigated using embedded stress sensors and a recovery technique that has allowed the observation of the microstructure above and below the Hugoniot elastic limit (HEL). These results are brought together here to explain the observed behavior. The failure front velocity is found to change with the applied stress, in particular, it slows markedly as the HEL is exceeded. Further, the curvature of histories recorded by sensors may be related to the observed response. The evidence in the microstructure shows that the response below HEL is dominated by the intergranular failure, while above it by plasticity in grains (including twinning), which alters the deformation and failure characteristics. These microstructural features are combined with the continuum observations to review the response of the alumina.

  9. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    NASA Astrophysics Data System (ADS)

    Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

    2017-01-01

    Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal catalyst crystallographic structure.

  10. Connecting grain boundary properties to microstructural evolution in polycrystalline metals

    NASA Astrophysics Data System (ADS)

    Holm, Elizabeth

    2013-03-01

    Within the last decade, both computational and experimental methods have evolved to the point that large-scale surveys of grain boundary properties have become tractable. Such studies have provided new information and insight about boundary structure, energetics, motion mechanisms, and mobility on a scale that invites application to polycrystalline systems. However, the complex behavior revealed in these studies often generates as many questions as it answers. This presentation will review pertinent computational and experimental studies of grain boundary properties in FCC metals, concentrating on boundary energy and mobility. The goal will be to identify the microstructural signatures of boundary properties in polycrystalline grain boundary networks. Topics will include how boundary energy and mobility trends manifest in real microstructures; the effects of shear coupling on boundary motion in bicrystals and polycrystals; the significance of boundaries that move in a non-thermally-activated manner to low temperature grain growth; and the consequences of the thermal roughening transition on grain stagnation. In each case, individual grain boundary properties couple with the characteristics of the grain boundary network to generate diverse microstructural outcomes. Supported in part by the US Department of Energy Office of Basic Energy Sciences.

  11. Collective dynamics underpins Rayleigh behavior in disordered polycrystalline ferroelectrics.

    PubMed

    Bintachitt, P; Jesse, S; Damjanovic, D; Han, Y; Reaney, I M; Trolier-McKinstry, S; Kalinin, S V

    2010-04-20

    Nanoscale and mesoscopic disorder and associated local hysteretic responses underpin the unique properties of spin and cluster glasses, phase-separated oxides, polycrystalline ferroelectrics, and ferromagnets alike. Despite the rich history of the field, the relationship between the statistical descriptors of hysteresis behavior such as Preisach density, and micro and nanostructure has remained elusive. By using polycrystalline ferroelectric capacitors as a model system, we now report quantitative nonlinearity measurements in 0.025-1 microm(3) volumes, approximately 10(6) times smaller than previously possible. We discover that the onset of nonlinear behavior with thickness proceeds through formation and increase of areal density of micron-scale regions with large nonlinear response embedded in a more weakly nonlinear matrix. This observation indicates that large-scale collective domain wall dynamics, as opposed to motion of noninteracting walls, underpins Rayleigh behavior in disordered ferroelectrics. The measurements provide evidence for the existence and extent of the domain avalanches in ferroelectric materials, forcing us to rethink 100-year old paradigms.

  12. In Situ TEM Observation of Dislocation Evolutionin Polycrystalline UO2

    SciTech Connect

    L. F. HE; 1 M. A. KIRK; Argonne National Laboratory; J. Gan; T. R. ALLEN

    2014-10-01

    In situ transmission electron microscopy observation of polycrystalline UO2 (with average grain size of about 5 lm) irradiated with Kr ions at 600C and 800C was conducted to understand the radiation-induced dislocation evolution under the influence of grain boundaries. The dislocation evolution in the grain interior of polycrystalline UO2 was similar under Kr irradiation at different ion energies and temperatures. As expected, it was characterized by the nucleation and growth of dislocation loops at low irradiation doses, followed by transformation to extended dislocation lines and tangles at high doses. For the first time, a dislocation-denuded zone was observed near a grain boundary in the 1-MeV Kr-irradiated UO2 sample at 800C. The denuded zone in the vicinity of grain boundary was not found when the irradiation temperature was at 600C. The suppression of dislocation loop formation near the boundary is likely due to the enhanced interstitial diffusion toward grain boundary at the high temperature.

  13. Dielectric and conducting behaviour of polycrystalline holmium octa-molybdate

    NASA Astrophysics Data System (ADS)

    Want, Basharat; Zahoor Ahmad, Bhat; Bhat, Bilal Hamid

    2014-09-01

    Polycrystalline holmium octa-molybdate spherulites have been obtained by using gel diffusion technique and characterized by different physio-chemical techniques. The surfaces of these spherulites are composed of nano-rod with an average diameter of about 80 nm. At room temperature the initial crystal structure is triclinic, space group P1. Thermal studies suggested a phase transition occurring in holmium octa-molybdate crystals at about 793 K. The electrical properties of the system have been studied as a function of frequency and temperature in the ranges of 20 Hz-3 MHz and 290-570 K, respectively. A giant dielectric constant and two loss peaks have been observed in the permittivity formalism. The conducting behaviour of the material is also discussed. The conductivity was found to be 1572 μ Ω-1 m-1 at room temperature and 3 MHz frequency. The conductivity of the polycrystalline material was attributed to the fact that it arises due to the migration of defects on the oxygen sub-lattice. Impedance studies were also performed in the frequency domain to infer the bulk and grain boundary contributions to the overall electric response of the material. The electrical responses have been attributed to the grain, grain-boundary, and interfacial effects.

  14. Analytical and numerical modeling of surface morphologies in thin films

    SciTech Connect

    Genin, F.Y.

    1995-05-01

    Experimental studies have show that strains due to thermal expansion mismatch between a film and its substrate can produce very large stresses in the film that can lead to the formation of holes and hillocks. Based on a phenomenological description of the evolution of a solid surface under both capillary and stress driving forces and for surface and grain boundary self-diffusion, this article provides analytical and numerical solutions for surface profiles of model geometries in polycrystalline thin films. Results can explain a variety of surface morphologies commonly observed experimentally and are discussed to give some practical insights on how to control the growth of holes and hillocks in thin films.

  15. Ferromagnetism in antiferromagnetic NiO-based thin films

    NASA Astrophysics Data System (ADS)

    Lin, Yuan-Hua; Zhan, Bin; Nan, Ce-Wen; Zhao, Rongjuan; Xu, Xiang; Kobayashi, M.

    2011-08-01

    Polycrystalline NiO-based thin films with Li or/and transition metal ions (V, Cr, Mn, Fe, Co, Cu, Zn) doping have been prepared by a sol-gel spin-coating method. Magnetization measurements reveal that V-, Fe-, and Mn-doped NiO thin films show obvious room-temperature ferromagnetic behaviors and ferromagnetic properties can be enhanced by the Li co-doping. Microstructure and X-ray core-level photoemission spectra analysis indicate that the ferromagnetism was not from the impurity TM metal cluster and may be ascribed to double exchange coupling effects via Li-induced holes.

  16. Thin-film transistors based on p-type Cu{sub 2}O thin films produced at room temperature

    SciTech Connect

    Fortunato, Elvira; Figueiredo, Vitor; Barquinha, Pedro; Elamurugu, Elangovan; Goncalves, Goncalo; Martins, Rodrigo; Park, Sang-Hee Ko; Hwang, Chi-Sun

    2010-05-10

    Copper oxide (Cu{sub 2}O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu{sub 2}O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm{sup 2}/V s and an on/off ratio of 2x10{sup 2}.

  17. Polycrystalline ferroelectric or multiferroic oxide articles on biaxially textured substrates and methods for making same

    DOEpatents

    Goyal, Amit; Shin, Junsoo

    2015-03-31

    A polycrystalline ferroelectric and/or multiferroic oxide article includes a substrate having a biaxially textured surface; at least one biaxially textured buffer layer supported by the substrate; and a biaxially textured ferroelectric or multiferroic oxide layer supported by the buffer layer. Methods for making polycrystalline ferroelectric and/or multiferroic oxide articles are also disclosed.

  18. Nanostructured thin solid oxide fuel cells with high power density.

    PubMed

    Ignatiev, Alex; Chen, Xin; Wu, Naijuan; Lu, Zigui; Smith, Laverne

    2008-10-28

    Nanostructured thin film solid oxide fuel cells (SOFC) have been developed for reduced temperature operation, with high power density, and to be self reforming. A thin film electrolyte (1-2 microm thickness), e.g., yttria-stabilized zirconia (YSZ), is deposited on a nickel foil substrate. The electrolyte thin film is polycrystalline when deposited on a polycrystalline nickel foil substrate, and is (100) textured when deposited on an atomically textured nickel foil substrate. The Ni foil substrate is then converted into a porous SOFC anode by photolithographic patterning and etching to develop porosity. A composite La(0.5)Sr(0.5)CoO(3) cathode is then deposited on the thin film electrolyte. The resultant thin film hetero structure fuel cells have operated at a significantly reduced temperature: as low as 470 degrees C, with a maximum power density of 140 mW cm(-2) at 575 degrees C, and an efficiency of >50%. This drastic reduction in operating temperature for an SOFC now also allows for the use of hydrocarbon fuels without the need for a separate reformer as the nickel anode effectively dissociates hydrocarbons within this temperature range. These nanostructured fuel cells show excellent potential for high power density, small volume, high efficiency fuel cells for power generation applications.

  19. Mechanisms limiting the performance of large grain polycrystalline silicon solar cells

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Alexander, P.; Dumas, K. A.; Wohlgemuth, J. W.

    1984-01-01

    The open-circuit voltage and short-circuit current of large-grain (1 to 10 mm grain diameter) polycrystalline silicon solar cells is determined by the minority-carrier diffusion length within the bulk of the grains. This was demonstrated by irradiating polycrystalline and single-crystal (Czochralski) silicon solar cells with 1 MeV electrons to reduce their bulk lifetime. The variation of short-circuit current with minority-carrier diffusion length for the polycrystalline solar cells is identical to that of the single-crystal solar cells. The open-circuit voltage versus short-circuit current characteristic of the polycrystalline solar cells for reduced diffusion lengths is also identical to that of the single-crystal solar cells. The open-circuit voltage of the polycrystalline solar cells is a strong function of quasi-neutral (bulk) recombination, and is reduced only slightly, if at all, by grain-boundary recombination.

  20. Nondestructive method and apparatus for imaging grains in curved surfaces of polycrystalline articles

    DOEpatents

    Carpenter, Donald A.

    1995-01-01

    A nondestructive method, and associated apparatus, are provided for determining the grain flow of the grains in a convex curved, textured polycrystalline surface. The convex, curved surface of a polycrystalline article is aligned in a horizontal x-ray diffractometer and a monochromatic, converging x-ray beam is directed onto the curved surface of the polycrystalline article so that the converging x-ray beam is diffracted by crystallographic planes of the grains in the polycrystalline article. The diffracted x-ray beam is caused to pass through a set of horizontal, parallel slits to limit the height of the beam and thereafter. The linear intensity of the diffracted x-ray is measured, using a linear position sensitive proportional counter, as a function of position in a direction orthogonal to the counter so as to generate two dimensional data. An image of the grains in the curved surface of the polycrystalline article is provided based on the two-dimensional data.

  1. A generalized inverse-pole-figure method to analyze domain switching in polycrystalline ferroelectrics

    NASA Astrophysics Data System (ADS)

    Ryo, Hyok-Su; Ryo, In-Gwang

    2016-08-01

    In this study, a generalized inverse-pole-figure (IPF) method has been suggested to analyze domain switching in polycrystalline ferroelectrics including composition of morphotropic phase boundary (MPB). Using the generalized IPF method, saturated domain orientation textures of single-phase polycrystalline ferroelectrics with tetragonal and rhombohedral symmetry have been analytically calculated and the results have been confirmed by comparison with the results from preceding studies. In addition, saturated domain orientation textures near MPBs of different multiple-phase polycrystalline ferroelectrics have been also analytically calculated. The results show that the generalized IPF method is an efficient method to analyze not only domain switching of single-phase polycrystalline ferroelectrics but also MPB of multiple-phase polycrystalline ferroelectrics.

  2. Micromechanical modelling of partially molten and sand reinforced polycrystalline ice

    NASA Astrophysics Data System (ADS)

    Castelnau, O.; Duval, P.

    2009-12-01

    The viscoplastic behaviour of polycrystalline ice is strongly affected by the very strong anisotropy of ice crystals. Indeed, in the dislocations creep regime relevant for ice sheet flow, dislocation glide on the basal plane of ice single crystals leads to strain-rates ~6 order of magnitude larger than strain-rates that might be obtain if only non-basal glide is activated. At the polycrystal scale, this behaviour is responsible for a strong mechanical interaction between grains in the secondary (stationary) creep regime, and strain-rate is essentially partitioned between soft grains well-oriented for basal glide and hard grains exhibiting an unfavourable orientation for basal slip. As a consequence, the macroscopic flow stress at the polycrystal scale essentially depends on the resistance of the hardest slip systems or on the associated accommodation processes such as climb of basal dislocation on non-basal planes. Creep experiments performed on polycrystalline ices containing a small amount (less than 10% volume fraction) of liquid water show a dramatic increase of strain-rate, by more than one order of magnitude, compared to solid ice when deformed under similar thermo-mechanical conditions. Similarly, a strong hardening is observed when polycrystalline ice is reinforced by sand (which can be considered as a rigid phase here). This behaviour can be explained by micromechanical models, which aims at estimating the mechanical interactions between grains. For example, the presence of water releases stress concentrations at grain boundaries and therefore favours the inactivation of non-basal systems. To estimate such effect and to reach quantitative comparison with experimental data, we make use of the recent Second-Order homogenization mean-field approach of Ponte-Castaneda, based on self-consistent scheme. The advantage of this approach, which has been shown to provide excellent results when applied to many different non-linear composite materials, comes from the

  3. Induced electronic anisotropy in bismuth thin films

    SciTech Connect

    Liao, Albert D.; Yao, Mengliang; Opeil, Cyril; Katmis, Ferhat; Moodera, Jagadeesh S.; Li, Mingda; Tang, Shuang; Dresselhaus, Mildred S.

    2014-08-11

    We use magneto-resistance measurements to investigate the effect of texturing in polycrystalline bismuth thin films. Electrical current in bismuth films with texturing such that all grains are oriented with the trigonal axis normal to the film plane is found to flow in an isotropic manner. By contrast, bismuth films with no texture such that not all grains have the same crystallographic orientation exhibit anisotropic current flow, giving rise to preferential current flow pathways in each grain depending on its orientation. Extraction of the mobility and the phase coherence length in both types of films indicates that carrier scattering is not responsible for the observed anisotropic conduction. Evidence from control experiments on antimony thin films suggests that the anisotropy is a result of bismuth's large electron effective mass anisotropy.

  4. Structure and ionic conductivity of well-aligned polycrystalline sodium titanogallate grown by reactive diffusion

    SciTech Connect

    Hasegawa, Ryo; Okabe, Momoko; Asaka, Toru; Ishizawa, Nobuo; Fukuda, Koichiro

    2015-09-15

    We prepared the b-axis-oriented polycrystalline Na{sub 0.85}Ti{sub 0.51}Ga{sub 4.37}O{sub 8} (NTGO) embedded in Ga{sub 2}O{sub 3}-doped Na{sub 2}Ti{sub 4}O{sub 9} matrix using the reactive diffusion technique. When the sandwich-type Ga{sub 2}TiO{sub 5}/NaGaO{sub 2}/Ga{sub 2}TiO{sub 5} diffusion couple was heated at 1323 K for 24 h, the NTGO polycrystal was readily formed in the presence of a liquid phase. The resulting polycrystalline material was characterized by X-ray diffractometry, electron microscopy and impedance spectroscopy. We mechanically processed the annealed diffusion couple and obtained the thin-plate electrolyte consisting mostly of the grain-aligned NTGO polycrystal. The ionic conductivity (σ) of the electrolyte along the common b-axis direction steadily increased from 1.3×10{sup −4} to 7.3×10{sup −3} S/cm as the temperature increased from 573 to 1073 K. There was a slope change at ca. 792 K for the Arrhenius plot of σ; the activation energies were 0.39 eV above this temperature and 0.57 eV below it. The NTGO showed the crystal structure (space group C2/m) with substantial positional disordering of one of the two Ga sites. The Na{sup +} ions occupied ca. 43% of the Wyckoff position 4i site, the deficiency of which would contribute to the relatively high ionic conductivity along the b-axis. The reactive diffusion could be widely applicable as the novel technique to the preparation of grain-aligned ceramics of multi-component systems. - Graphical abstract: We have prepared the b-axis-oriented Na{sub 0.85}Ti{sub 0.51}Ga{sub 4.37}O{sub 8} polycrystal embedded in Ga{sub 2}O{sub 3}-doped Na{sub 2}Ti{sub 4}O{sub 9} matrix by the heat treatment of sandwich-type diffusion couple of Ga{sub 2}TiO{sub 5}/NaGaO{sub 2}/Ga{sub 2}TiO{sub 5}. The resulting Na{sub 0.85}Ti{sub 0.51}Ga{sub 4.37}O{sub 8} electrolyte showed the ionic conductivity ranging from 1.3×10{sup −4} S/cm at 573 K to 7.3×10{sup −3} S/cm at 1073 K. - Highlights: • The b

  5. Deposition of hydroxyapatite thin films by Nd:YAG laser ablation: a microstructural study

    SciTech Connect

    Nistor, L.C.; Ghica, C.; Teodorescu, V.S.; Nistor, S.V. . E-mail: snistor@alpha1.infim.ro; Dinescu, M.; Matei, D.; Frangis, N.; Vouroutzis, N.; Liutas, C.

    2004-11-02

    Hydroxyapatite (HA) thin films has been successfully deposited by Nd:YAG laser ablation at {lambda} = 532 nm. The morphology and microstructure of the deposited layers was studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution electron microscopy (HREM). Polycrystalline HA films were directly obtained with the substrate at 300 deg. C and without introducing water vapors in the deposition chamber. Electron paramagnetic resonance (EPR) measurements show that the oxygen stoichiometry in the HA films is also maintained. Depositions performed at {lambda} = 335 nm laser wavelength and 300 deg. C substrate temperature resulted in polycrystalline layers of mixed composition of HA and tricalciumphosphate (TCP)

  6. Method for producing silicon thin-film transistors with enhanced forward current drive

    DOEpatents

    Weiner, K.H.

    1998-06-30

    A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

  7. Method for producing silicon thin-film transistors with enhanced forward current drive

    DOEpatents

    Weiner, Kurt H.

    1998-01-01

    A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

  8. Electrodeposited CuInSe2 Thin Film Junctions

    NASA Technical Reports Server (NTRS)

    Raffaelle, R. P.; Mantovani, J. G.; Bailey, S. G.; Hepp, A. F.; Gordon, E. M.; Haraway, R.

    1997-01-01

    We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

  9. Radiation hardness of three-dimensional polycrystalline diamond detectors

    SciTech Connect

    Lagomarsino, Stefano Sciortino, Silvio; Bellini, Marco; Corsi, Chiara; Cindro, Vladimir; Kanxheri, Keida; Servoli, Leonello; Morozzi, Arianna; Passeri, Daniele; Schmidt, Christian J.

    2015-05-11

    The three-dimensional concept in particle detection is based on the fabrication of columnar electrodes perpendicular to the surface of a solid state radiation sensor. It permits to improve the radiation resistance characteristics of a material by lowering the necessary bias voltage and shortening the charge carrier path inside the material. If applied to a long-recognized exceptionally radiation-hard material like diamond, this concept promises to pave the way to the realization of detectors of unprecedented performances. We fabricated conventional and three-dimensional polycrystalline diamond detectors, and tested them before and after neutron damage up to 1.2 ×10{sup 16 }cm{sup −2}, 1 MeV-equivalent neutron fluence. We found that the signal collected by the three-dimensional detectors is up to three times higher than that of the conventional planar ones, at the highest neutron damage ever experimented.

  10. Creep behavior for advanced polycrystalline SiC fibers

    SciTech Connect

    Youngblood, G.E.; Jones, R.H.; Kohyama, Akira

    1997-04-01

    A bend stress relaxation (BSR) test has been utilized to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Qualitative, S-shaped 1hr BSR curves were compared for three selected advanced SiC fiber types and standard Nicalon CG fiber. The temperature corresponding to the middle of the S-curve (where the BSR parameter m = 0.5) is a measure of a fiber`s thermal stability as well as it creep resistance. In order of decreasing thermal creep resistance, the measured transition temperatures were Nicalon S (1450{degrees}C), Sylramic (1420{degrees}C), Hi-Nicalon (1230{degrees}C) and Nicalon CG (1110{degrees}C).

  11. Ion implantation of erbium into polycrystalline cadmium telluride

    SciTech Connect

    Ushakov, V. V. Klevkov, Yu. V.; Dravin, V. A.

    2015-05-15

    The specific features of the ion implantation of polycrystalline cadmium telluride with grains 20–1000 μm in dimensions are studied. The choice of erbium is motivated by the possibility of using rare-earth elements as luminescent “probes” in studies of the defect and impurity composition of materials and modification of the composition by various technological treatments. From the microphotoluminescence data, it is found that, with decreasing crystal-grain dimensions, the degree of radiation stability of the material is increased. Microphotoluminescence topography of the samples shows the efficiency of the rare-earth probe in detecting regions with higher impurity and defect concentrations, including regions of intergrain boundaries.

  12. Magnetoelectric coupling in polycrystalline FeVO{sub 4}

    SciTech Connect

    Kundys, Bohdan; Martin, Christine; Simon, Charles

    2009-11-01

    We report coupling between magnetic and electric orders for antiferromagnetic polycrystalline FeVO{sub 4} in which magnetism-induced polarization has been recently found in noncollinear antiferromagnetic state below the second antiferromagnetic phase transition at T{sub N2}{approx_equal}15.7 K. In this low symmetry phase space group P1, the magnetic field dependence of electric polarization evidences a clear magnetoelectric coupling in the noncollinear spin-configured antiferromagnetic phase. The discontinuity of magnetodielectric effect observed at the vicinity of the polar to nonpolar transition evidences competition between different magnetodielectric couplings in the two different antiferromagnetic states. The existence of thermal expansion anomaly near T{sub N2} and magnetostriction effect support magnetoelastically mediated scenario of the observed magnetoelectric effect.

  13. Fabricating micro-instruments in surface-micromachined polycrystalline silicon

    SciTech Connect

    Comtois, J.H.; Michalicek, M.A.; Barron, C.C.

    1997-04-01

    Smaller, lighter instruments can be fabricated as Micro-Electro-Mechanical Systems (MEMS), having micron scale moving parts packaged together with associated control and measurement electronics. Batch fabrication of these devices will make economical applications such as condition-based machine maintenance and remote sensing. The choice of instrumentation is limited only by the designer`s imagination. This paper presents one genre of MEMS fabrication, surface-micromachined polycrystalline silicon (polysilicon). Two currently available but slightly different polysilicon processes are presented. One is the ARPA-sponsored ``Multi-User MEMS ProcesS`` (MUMPS), available commercially through MCNC; the other is the Sandia National Laboratories ``Sandia Ultra-planar Multilevel MEMS Technology`` (SUMMiT). Example components created in both processes will be presented, with an emphasis on actuators, actuator force testing instruments, and incorporating actuators into larger instruments.

  14. Polycrystalline diamond MEMS resonator technology for sensor applications.

    SciTech Connect

    Sullivan, John P.; Aslam, Dean; Sepulveda-Alancastro, Nelson

    2005-07-01

    Due to material limitations of poly-Si resonators, polycrystalline diamond (poly-C) has been explored as a new MEMS resonator material. The poly-C resonators are designed, fabricated and tested using electrostatic (Michigan State University) and piezoelectric (Sandia National Laboratories) actuation methods, and the results are compared. For comparable resonator structures, although the resonance frequencies are similar, the measured Q values in the ranges of 1000-2000 and 10,000-15,000 are obtained for electrostatic and piezoelectric actuation methods, respectively. The difference in Q for the two methods is related to different pressures used during the measurement and not to the method of measurement. For the poly-C cantilever beam resonators, the highest value of their quality factor (Q) is reported for the first time (15,263).

  15. Phosphorus Doping of Polycrystalline CdTe by Diffusion

    SciTech Connect

    Colegrove, Eric; Albin, David S.; Guthrey, Harvey; Harvey, Steve; Burst, James; Moutinho, Helio; Farrell, Stuart; Al-Jassim, Mowafak; Metzger, Wyatt K.

    2015-06-14

    Phosphorus diffusion in single crystal and polycrystalline CdTe material is explored using various methods. Dynamic secondary ion mass spectroscopy (SIMS) is used to determine 1D P diffusion profiles. A 2D diffusion model is used to determine the expected cross-sectional distribution of P in CdTe after diffusion anneals. Time of flight SIMS and cross-sectional cathodoluminescence corroborates expected P distributions. Devices fabricated with diffused P exhibit hole concentrations up to low 1015 cm-3, however a subsequent activation anneal enabled hole concentrations greater than 1016 cm-3. CdCl2 treatments and Cu based contacts were also explored in conjunction with the P doping process.

  16. Spherical silicon photonic microcavities: From amorphous to polycrystalline

    NASA Astrophysics Data System (ADS)

    Fenollosa, R.; Garín, M.; Meseguer, F.

    2016-06-01

    Shaping silicon as a spherical object is not an obvious task, especially when the object size is in the micrometer range. This has the important consequence of transforming bare silicon material in a microcavity, so it is able to confine light efficiently. Here, we have explored the inside volume of such microcavities, both in their amorphous and in their polycrystalline versions. The synthesis method, which is based on chemical vapor deposition, causes amorphous microspheres to have a high content of hydrogen that produces an onionlike distributed porous core when the microspheres are crystallized by a fast annealing regime. This substantially influences the resonant modes. However, a slow crystallization regime does not yield pores, and produces higher-quality-factor resonances that could be fitted to the Mie theory. This allows the establishment of a procedure for obtaining size calibration standards with relative errors of the order of 0.1%.

  17. Modeling Crack Propagation in Polycrystalline Microstructure Using Variational Multiscale Method

    DOE PAGES

    Sun, S.; Sundararaghavan, V.

    2016-01-01

    Crack propagation in a polycrystalline microstructure is analyzed using a novel multiscale model. The model includes an explicit microstructural representation at critical regions (stress concentrators such as notches and cracks) and a reduced order model that statistically captures the microstructure at regions far away from stress concentrations. Crack propagation is modeled in these critical regions using the variational multiscale method. In this approach, a discontinuous displacement field is added to elements that exceed the critical values of normal or tangential tractions during loading. Compared to traditional cohesive zone modeling approaches, the method does not require the use of any specialmore » interface elements in the microstructure and thus can model arbitrary crack paths. The capability of the method in predicting both intergranular and transgranular failure modes in an elastoplastic polycrystal is demonstrated under tensile and three-point bending loads.« less

  18. Attosecond dynamical Franz-Keldysh effect in polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Lucchini, M.; Sato, S. A.; Ludwig, A.; Herrmann, J.; Volkov, M.; Kasmi, L.; Shinohara, Y.; Yabana, K.; Gallmann, L.; Keller, U.

    2016-08-01

    Short, intense laser pulses can be used to access the transition regime between classical and quantum optical responses in dielectrics. In this regime, the relative roles of inter- and intraband light-driven electronic transitions remain uncertain. We applied attosecond transient absorption spectroscopy to investigate the interaction between polycrystalline diamond and a few-femtosecond infrared pulse with intensity below the critical intensity of optical breakdown. Ab initio time-dependent density functional theory calculations, in tandem with a two-band parabolic model, accounted for the experimental results in the framework of the dynamical Franz-Keldysh effect and identified infrared induction of intraband currents as the main physical mechanism responsible for the observations.

  19. Leakage current measurements of a pixelated polycrystalline CVD diamond detector

    NASA Astrophysics Data System (ADS)

    Zain, R. M.; Maneuski, D.; O'Shea, V.; Bates, R.; Blue, A.; Cunnigham, L.; Stehl, C.; Berderman, E.; Rahim, R. A.

    2013-01-01

    Diamond has several desirable features when used as a material for radiation detection. With the invention of synthetic growth techniques, it has become feasible to look at developing diamond radiation detectors with reasonable surface areas. Polycrystalline diamond has been grown using a chemical vapour deposition (CVD) technique by the University of Augsburg and detector structures fabricated at the James Watt Nanofabrication Centre (JWNC) in the University of Glasgow in order to produce pixelated detector arrays. The anode and cathode contacts are realised by depositing gold to produce ohmic contacts. Measurements of I-V characteristics were performed to study the material uniformity. The bias voltage is stepped from -1000V to 1000V to investigate the variation of leakage current from pixel to pixel. Bulk leakage current is measured to be less than 1nA.

  20. Dosimetric characterization of a 2D polycrystalline CVD diamond detector

    NASA Astrophysics Data System (ADS)

    Bartoli, A.; Cupparo, I.; Baldi, A.; Scaringella, M.; Pasquini, A.; Pallotta, S.; Talamonti, C.; Bruzzi, M.

    2017-03-01

    A bidimensional pixelated dosimeter composed of two polycrystalline Chemical Vapour Deposited diamond films, 2.5 × 2.5 cm2 each placed aside, has been manufactured so as to obtain a detector with a 2 mm pitch over a total active area of 5.0 × 2.5 cm2. We performed the dosimetric characterization of the detector with an Elekta Synergy linear accelerator using a 6 MV photon beam. Uniformity maps, rise and fall times, signal repeatability, dependence on dose rate, linearity with dose and sensitivity show that the device is suitable for dosimetric evaluations in Intensity Modulated Radiation Therapy and Volumetric Modulated Arc Therapy (VMAT) treatments. Then, a first quantitative evaluation of the dose distribution in a lung VMAT treatment plan has been carried out, by comparing data from our device with Treatment Planning Sistem values by means of a Γ test, with promising results.

  1. Morphological changes in polycrystalline Fe after compression and release

    NASA Astrophysics Data System (ADS)

    Gunkelmann, Nina; Tramontina, Diego R.; Bringa, Eduardo M.; Urbassek, Herbert M.

    2015-02-01

    Despite a number of large-scale molecular dynamics simulations of shock compressed iron, the morphological properties of simulated recovered samples are still unexplored. Key questions remain open in this area, including the role of dislocation motion and deformation twinning in shear stress release. In this study, we present simulations of homogeneous uniaxial compression and recovery of large polycrystalline iron samples. Our results reveal significant recovery of the body-centered cubic grains with some deformation twinning driven by shear stress, in agreement with experimental results by Wang et al. [Sci. Rep. 3, 1086 (2013)]. The twin fraction agrees reasonably well with a semi-analytical model which assumes a critical shear stress for twinning. On reloading, twins disappear and the material reaches a very low strength value.

  2. Stress enhanced diffusion of krypton ions in polycrystalline titanium

    SciTech Connect

    Nsengiyumva, S.; Raji, A. T.; Rivière, J. P.; Britton, D. T.; Härting, M.

    2014-07-14

    An experimental investigation on the mutual influence of pre-existing residual stress and point defect following ion implantation is presented. The study has been carried out using polycrystalline titanium samples energetically implanted with krypton ions at different fluences. Ion beam analysis was used to determine the concentration profile of the injected krypton ions, while synchrotron X-ray diffraction has been used for stress determination. Ion beam analysis and synchrotron X-ray diffraction stress profile measurements of the implanted titanium samples show a clear evidence of stress-enhanced diffusion of krypton ions in titanium. It is further observed that for the titanium samples implanted at low fluence, ion implantation modifies the pre-existing residual stress through the introduction of point and open volume defects. The stress fields resulting from the ion implantation act to drift the krypton inclusions towards the surface of titanium.

  3. Effect of localized polycrystalline silicon properties on solar cell performance

    NASA Technical Reports Server (NTRS)

    Leung, D.; Iles, P. A.; Hyland, S.; Kachare, A.

    1984-01-01

    Several forms of polycrystalline silicon, mostly from cast ingots, (including UCP, SILSO and HEM) were studied. On typical slices, localized properties were studied in two ways. Small area (about 2.5 sq mm) mesa diodes were formed, and localized photovoltaic properties were measured. Also a small area (about .015 sq mm) light spot was scanned across the cells; the light spot response was calibrated to measure local diffusion length directly. Using these methods, the effects of grain boundaries, or of intragrain imperfections were correlated with cell performance. Except for the fine grain portion of SILSO, grain boundaries played only a secondary role in determining cell performance. The major factor was intra-grain material quality and it varied with position in ingots and probably related to solidification procedure.

  4. Slot waveguides with polycrystalline silicon for electrical injection.

    PubMed

    Preston, Kyle; Lipson, Michal

    2009-02-02

    We demonstrate horizontal slot waveguides using high-index layers of polycrystalline and single crystalline silicon separated by a 10 nm layer of silicon dioxide. We measure waveguide propagation loss of 7 dB/cm and a ring resonator intrinsic quality factor of 83,000. The electric field of the optical mode is strongly enhanced in the low-index oxide layer, which can be used to induce a strong modal gain when an active material is embedded in the slot. Both high-index layers are made of electrically conductive silicon which can efficiently transport charge to the slot region. The incorporation of conductive silicon materials with high-Q slot waveguide cavities is a key step for realizing electrical tunneling devices such as electrically pumped silicon-based light sources.

  5. Convoy electron production in polycrystalline and monocrystalline targets

    SciTech Connect

    Huldt, S.

    1980-01-01

    The velocity distribution of electrons ejected close to the forward direction by 0.8-2 MeV/A ions traversing various solid targets, including a Au monocrystal, is measured in coincidence with emerging charge-selected ions. The velocity spectrum is observed to be independent of outgoing projectile velocity and charge state for polycrystalline targets. Measurements on the Au crystal under channeling conditions show dependences on final charge state, and are tentatively explained by assuming that the main contribution to the production yield comes from the non-channeled fraction of the ions. A simple model for the creation of the forward-ejected electrons is proposed, which accounts for most of the experimental findings.

  6. Temperature dependence of the internal friction of polycrystalline indium

    NASA Astrophysics Data System (ADS)

    Sapozhnikov, K. V.; Golyandin, S. N.; Kustov, S. B.

    2010-12-01

    The temperature dependences of the internal friction and the elastic modulus of polycrystalline indium have been investigated in the temperature range 7-320 K at oscillatory loading frequencies of approximately 100 kHz. The effect of temperature on the amplitude dependence and the effect of high-amplitude loading at 7 K on the temperature and amplitude dependences of the internal friction of indium have been analyzed. It has been demonstrated that the thermocycling leads to microplastic deformation of indium due to the anisotropy of thermal expansion and the appearance of a "recrystallization" maximum in the spectrum of the amplitude-dependent internal friction. The conclusion has been drawn that the bulk diffusion of vacancies and impurities begins at temperatures of approximately 90 K and that, at lower temperatures, the diffusion occurs in the vicinity of dislocations. It has been revealed that the high-temperature internal friction background becomes noticeable after the dissolution of Cottrell atmospheres.

  7. Fast bolometric sensor built-in into polycrystalline CVD diamond

    NASA Astrophysics Data System (ADS)

    Klokov, A. Yu; Sharkov, A. I.; Galkina, T. I.; Khmelnitsky, R. A.; Dravin, V. A.; Ralchenko, V. G.; Gippius, A. A.

    2007-12-01

    Diamond, with its unique combination of physical properties, is a promising material for electronic devices operating under extreme conditions. Due to its exceptionally high thermal conductivity, diamond-based bolometers should possess very short response time. A fast bolometric sensor was formed within a polycrystalline diamond plate by ion implantation and subsequent annealing. The response kinetics of the structure was studied under a nitrogen laser pulsed illumination. The response time at room temperature was less than 20 ns. The spatial-temporal distribution of responses allowed us to distinguish between thermal responses and those of different nature (e.g. photoconductivity). This study was supported by the Russian Foundation for Basic Research, project nos. 05-02-17545 and 07-02-00575.

  8. EBIC and IBIC Imaging on Polycrystalline CdTe

    NASA Astrophysics Data System (ADS)

    Baier, Nicolas; Brambilla, Andrea; Feuillet, Guy; Lohstroh, Annika; Renet, Sébastien; Sellin, Paul

    2007-06-01

    Polycrystalline Cadmium Telluride samples were electrically characterized using two high resolution imaging techniques: Electron and Ion Beam Induced Current. Using different probes, electrons and protons, both surface and bulk transport properties were obtained. The grain structure was observed and grain boundaries effects were studied. The material tends to have a homogeneous response under low excitation, with only few weakly responding grains and no dead areas. Under higher excitation, the material exhibits some particular behavior, like grain sub-structures. The IBIC experiment gives a measure of Charge Collection Efficiency under different sample bias voltages. In addition to the measurement of the response dispersion, it leads to a discussion of the charge transport properties and a mobility-lifetime product calculation.

  9. Extracting Cu Diffusion Parameters in Polycrystalline CdTe

    SciTech Connect

    Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Guo, Da; Dragica, Vasileska; Ringhofer, Christian

    2014-06-13

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystal-line, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately.

  10. Optical properties of ultrapure nano-polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Ikeda, Kazuhiro; Sumiya, Hitoshi

    2016-12-01

    We synthesized an ultrapure nano-polycrystalline diamond (NPD) containing very few chemical impurities (<1 ppm). The 13C concentration of the carbon source was reduced to less than 0.01% by using 12C-enriched high-purity carbon. The ultrapure NPD was synthesized by direct conversion from graphite under high-pressure and high-temperature (HPHT) conditions. We measured the optical properties of the ultrapure NPD, which appeared yellowish, attributed to the structural features of the specimen. Also, the one-phonon absorption peak at 1220 cm-1 is attributed to the broken symmetry of the diamond lattice. Moreover, a defect-related PL peak was found at 730 nm.

  11. Predicting fracture in micron-scale polycrystalline silicon MEMS structures.

    SciTech Connect

    Hazra, Siddharth S.; de Boer, Maarten Pieter; Boyce, Brad Lee; Ohlhausen, James Anthony; Foulk, James W., III; Reedy, Earl David, Jr.

    2010-09-01

    Designing reliable MEMS structures presents numerous challenges. Polycrystalline silicon fractures in a brittle manner with considerable variability in measured strength. Furthermore, it is not clear how to use a measured tensile strength distribution to predict the strength of a complex MEMS structure. To address such issues, two recently developed high throughput MEMS tensile test techniques have been used to measure strength distribution tails. The measured tensile strength distributions enable the definition of a threshold strength as well as an inferred maximum flaw size. The nature of strength-controlling flaws has been identified and sources of the observed variation in strength investigated. A double edge-notched specimen geometry was also tested to study the effect of a severe, micron-scale stress concentration on the measured strength distribution. Strength-based, Weibull-based, and fracture mechanics-based failure analyses were performed and compared with the experimental results.

  12. Dependence of resistivity on the doping level of polycrystalline silicon

    NASA Technical Reports Server (NTRS)

    Fripp, A. L.

    1975-01-01

    The electrical resistivity of polycrystalline silicon films has been studied as a function of doping concentration and heat treatment. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity of the as-deposited films was widely scattered but independent of dopant atom concentration at the lightly doped levels and was strong function of dopant level in the more heavily doped regions. Postdeposition heat treatments in an oxidizing atmosphere remove scatter in the data. The resultant resistivity for dopant levels less than 10 to the 16th atoms/per cu cm was approximately equal to that of intrinsic silicon. In the next 2 orders of magnitude increase in dopant level, the resistivity dropped 6 orders of magnitude. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.

  13. Bosonic Anomalies in Boron-Doped Polycrystalline Diamond

    NASA Astrophysics Data System (ADS)

    Zhang, Gufei; Samuely, Tomas; Kačmarčík, Jozef; Ekimov, Evgeny A.; Li, Jun; Vanacken, Johan; Szabó, Pavol; Huang, Junwei; Pereira, Paulo J.; Cerbu, Dorin; Moshchalkov, Victor V.

    2016-12-01

    Quantum confinement and coherence effects are considered the cause of many specific features for systems which are generally low dimensional, strongly disordered, and/or situated in the vicinity of the metal-insulator transition. Here, we report on the observation of anomalous resistance peak and specific heat peaks superimposed at the superconducting transition of heavily boron-doped polycrystalline bulk diamond, which is a three-dimensional system situated deep on the metallic side of the boron-doping-driven metal-insulator transition in diamond. The anomalous resistance peak and specific heat peaks are interpreted as a result of confinement and coherence effects in the presence of intrinsic and extrinsic granularity. Our data, obtained for superconducting diamond, provide a reference for understanding the superconductivity in other granular disordered systems. Furthermore, our study brings attention to the significant influence of granular disorder on the physical properties of boron-doped diamond, which is considered a promising candidate for electronics applications.

  14. Controlled variation of the information depth by angle dependent soft X-ray emission spectroscopy: A study on polycrystalline Cu(In,Ga)Se 2

    NASA Astrophysics Data System (ADS)

    Mönig, H.; Lauermann, I.; Grimm, A.; Camus, C.; Kaufmann, C. A.; Pistor, P.; Jung, Ch.; Kropp, T.; Lux-Steiner, M. C.; Fischer, Ch.-H.

    2008-12-01

    Angle dependent X-ray emission spectroscopy (AXES) is introduced as a tool for depth dependent composition analysis. A controlled variation of the information depth is demonstrated by changing the geometry from grazing exit to grazing incidence geometry. First results are presented from Cu(In,Ga)Se 2 (CIGSe)-based polycrystalline thin film solar cell bi-layer components. A mathematical model explains changes in relative intensity due to the absorption and emission behavior of thin CdS and Zn(S,O) cover layers. The fact that the presented data can be modelled by ideal bi-layer structures, provides both, proof of concept in general and the proof of applicability to the relatively rough layered structures based on CIGSe. In bare CIGSe a homogeneous distribution of Cu and Ga is found in a depth range between 22 and 470 nm.

  15. Polycrystalline CVD diamond device level modeling for particle detection applications

    NASA Astrophysics Data System (ADS)

    Morozzi, A.; Passeri, D.; Kanxheri, K.; Servoli, L.; Lagomarsino, S.; Sciortino, S.

    2016-12-01

    Diamond is a promising material whose excellent physical properties foster its use for radiation detection applications, in particular in those hostile operating environments where the silicon-based detectors behavior is limited due to the high radiation fluence. Within this framework, the application of Technology Computer Aided Design (TCAD) simulation tools is highly envisaged for the study, the optimization and the predictive analysis of sensing devices. Since the novelty of using diamond in electronics, this material is not included in the library of commercial, state-of-the-art TCAD software tools. In this work, we propose the development, the application and the validation of numerical models to simulate the electrical behavior of polycrystalline (pc)CVD diamond conceived for diamond sensors for particle detection. The model focuses on the characterization of a physically-based pcCVD diamond bandgap taking into account deep-level defects acting as recombination centers and/or trap states. While a definite picture of the polycrystalline diamond band-gap is still debated, the effect of the main parameters (e.g. trap densities, capture cross-sections, etc.) can be deeply investigated thanks to the simulated approach. The charge collection efficiency due to β -particle irradiation of diamond materials provided by different vendors and with different electrode configurations has been selected as figure of merit for the model validation. The good agreement between measurements and simulation findings, keeping the traps density as the only one fitting parameter, assesses the suitability of the TCAD modeling approach as a predictive tool for the design and the optimization of diamond-based radiation detectors.

  16. Growth of textured mullite fibers using polycrystalline precursors

    NASA Astrophysics Data System (ADS)

    Yoon, Wonki

    Fine ceramic oxide fibers are widely used as reinforcements in composites for high temperature applications. The primary goal of this research was to investigate the growth of textured or single crystal oxide fibers by heat treatment of polycrystalline or amorphous, extruded precursor fibers. Mullite was selected for this study due to its excellent chemical stability, creep resistance and strength at high temperatures. Micrographic analysis and in-situ synchrotron X-ray diffraction analysis have been performed on mullite systems in order to study the anisotropic grain growth and the effect of titania additions in mullite. The estimated activation energies from the SEM micrographic particle size analysis were 644.3 kJ/mol and 773.7 kJ/mol for the length and thickness, respectively. An in-situ synchrotron X-ray diffraction microstructure analysis was done with a Curved Image Plate (CIP) detector and the fiber was heat treated in a QLF. The apparent crystallite size showed anisotropy in crystallite growth. Furthermore, a higher growth rate along the [001] direction than the [110] direction was observed. Mullite whiskers were prepared by HF leaching and templated into polycrystalline mullite fibers by extrusion. Textured growth of mullite fibers with elongated grains, aligned along the long-axis of the fibers, was achieved by heat treatment. Repeated heat treatment cycles of a whisker-templated fiber showed a bamboo-like microstructure. It was confirmed by SEM, TEM and optical microscopy (OM) that the growth direction along the fiber length was the [001] direction of orthorhombic mullite.

  17. Precipitate Rafting in a Polycrystalline Superalloy During Compression Creep

    NASA Astrophysics Data System (ADS)

    Altincekic, Arun; Balikci, Ercan

    2014-12-01

    Rafting is an industrially and scientifically important phenomenon for precipitate-strengthened alloys utilized at high temperatures. Although this phenomenon is observed in polycrystalline alloys as well, the literature lacks scientific work on rafting in polycrystals. Scientific work is usually conducted on single-crystal superalloys. Being one of the many polycrystalline nickel-base superalloys, IN738LC has a good high-temperature strength and hot corrosion resistance. Coherency strains between the FCC gamma matrix ( γ)- and L12 gamma prime ( γ')-precipitate phase particles mainly provide the high-temperature strength in IN738LC. Conical IN738LC specimens have been aged under compression for various times [24, 192, 480, and 960 hours at 1223 K (950 °C) and 12, 24, 192, and 480 hours at 1323 K (1050 °C)] in order to observe the morphological evolution of the γ' precipitate microstructure. Dislocations play a determining role in morphological changes. Fingerprints of matrix dislocations in the form of indentations on γ' precipitates have been identified by scanning electron microscope. Precipitate morphology has become more complex through dissolution/merging as temperature, aging time, and stress have increased. The precipitate morphology has evolved toward rafting at appropriate strain, temperature, and time. Localized slip bands have marked the beginning of rafting. The rafts have been observed at around a 45 deg angle away from the load direction. For higher stress positions, there is a trend toward N-type rafting which is expected of a positive misfit alloy under compression. Rafts eventually have collapsed due to severe creep deformation.

  18. Compositional dependence of Pb(Mg1/3,Nb2/3)O3-PbTiO3 piezoelectric thin films by combinatorial sputtering

    NASA Astrophysics Data System (ADS)

    Kurokawa, Fumiya; Tsujiura, Yuichi; Hida, Hirotaka; Kanno, Isaku

    2014-09-01

    We evaluated the compositional dependence of Pb(Mg1/3,Nb2/3)O3-PbTiO3 (PMN-PT) polycrystalline thin films by combinatorial sputtering. We prepared compositional gradient (1 - x)PMN-xPT polycrystalline thin films with preferential orientation along the <001> direction in the composition range of x = 0-0.62. We determined that the morphotropic phase boundary (MPB) composition of PMN-PT polycrystalline thin film existed at around x = 0.35, from the X-ray diffraction (XRD) measurements. The maximum value of relative dielectric constants (ɛr = 1498) was obtained at approximately x = 0.23. On the other hand, the piezoelectric coefficients (|e31,f| = 14.1 C/m2) peaked at the determined MPB composition of x = 0.35. From the results of the compositional dependence of dielectric and piezoelectric characteristics, the FOM (e_{31,\\text{f}}^{2}/\\varepsilon _{0}\\varepsilon _{\\text{r}}) of the PMN-PT (x = 0.35) thin film reached 21 GPa, which is much higher than that of the other polycrystalline piezoelectric thin films. These results suggest that PMN-PT (x = 0.35) thin film is a promising material for high-efficiency piezoelectric MEMS energy harvesters.

  19. Highly doped polycrystalline silicon microelectrodes reduce noise in neuronal recordings in vivo.

    PubMed

    Saha, Rajarshi; Jackson, Nathan; Patel, Chetan; Muthuswamy, Jit

    2010-10-01

    The aims of this study are to 1) experimentally validate for the first time the nonlinear current-potential characteristics of bulk doped polycrystalline silicon in the small amplitude voltage regimes (0-200 μV) and 2) test if noise amplitudes ( 0-15 μV ) from single neuronal electrical recordings get selectively attenuated in doped polycrystalline silicon microelectrodes due to the above property. In highly doped polycrystalline silicon, bulk resistances of several hundred kilo-ohms were experimentally measured for voltages typical of noise amplitudes and 9-10 kΩ for voltages typical of neural signal amplitudes ( > 150-200 μV). Acute multiunit measurements and noise measurements were made in n=6 and n=8 anesthetized adult rats, respectively, using polycrystalline silicon and tungsten microelectrodes. There was no significant difference in the peak-to-peak amplitudes of action potentials recorded from either microelectrode (p > 0.10). However, noise power in the recordings from tungsten microelectrodes (26.36 ±10.13 pW) was significantly higher than the corresponding value in polycrystalline silicon microelectrodes (7.49 ±2.66 pW). We conclude that polycrystalline silicon microelectrodes result in selective attenuation of noise power in electrical recordings compared to tungsten microelectrodes. This reduction in noise compared to tungsten microelectrodes is likely due to the exponentially higher bulk resistances offered by highly doped bulk polycrystalline silicon in the range of voltages corresponding to noise in multiunit measurements.

  20. Synthesis, Characterization And Optoelectrical Properties of Cd Doped ZnO Poly Crystalline Nano Thin Films Deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) Method

    NASA Astrophysics Data System (ADS)

    Bindal, Nitin; Sharma, Manisha; Kumar, H.; Sharma, S.; Upadhaya, S. C.

    2011-12-01

    Cadmium doped zinc oxide polycrystalline nano thin films were deposited on microscopic glass substrates following a modified chemical bath technique called Successive Ionic Layer Adsorption and Reaction (SILAR). Cadmium doping was found to increase the film grown rate. The X-ray diffraction pattern showed that films have polycrystalline nature. The SEM image revealed growth of large crystallites perpendicular to the substrates. The optical transmittance spectra indicate that these thin films have the direct energy band gap. The resistivity of these films decreased with increase in the temperature for all compositions, which confirmed the semiconducting nature of films.

  1. Molecular Dynamics Simulations of Displacement Cascades in Single and Polycrystalline Zirconia

    SciTech Connect

    Du Jincheng

    2009-03-10

    Displacement cascades in zirconia have been studied using classical molecular dynamics simulations. Polycrystalline zirconia with nano-meter grains were created using Voronoi polyhedra construction and studied in comparison with single crystalline zirconia. The results show that displacement cascades with similar kinetic energy generated larger number of displaced atoms in polycrystalline than in the single crystal structure. The fraction of atoms with coordination number change was also higher in polycrystalline zirconia that was explained to be due to the diffusion of oxygen and relaxation at grain boundaries.

  2. Preparation and characterization of polycrystalline and single crystal Gd doped barium cerium oxide

    SciTech Connect

    West, D.; Haile, S.M.; Feigelson, R.S.

    1995-12-31

    Polycrystalline samples of BaCe{sub x}Gd{sub 1{minus}x}O{sub 3} have been prepared with 0.10 < x < 0.20. X-ray powder diffraction indicates the samples contain only one crystalline phase for doping levels < 0.15. Transmission electron microscopy analyses on the 10% doped sample revealed no glassy phases in the intergranular regions. Single crystal fibers were prepared by Laser Heated Pedestal Growth (LHPG) from the polycrystalline samples. Fiber growth was non-conservative thus the single crystal quality was limited. Preliminary conductivity measurements on the polycrystalline samples using AC impedance spectroscopy are compared with literature data.

  3. Impact of graphene polycrystallinity on the performance of graphene field-effect transistors

    SciTech Connect

    Jiménez, David; Chaves, Ferney; Cummings, Aron W.; Van Tuan, Dinh; Kotakoski, Jani; Roche, Stephan

    2014-01-27

    We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices.

  4. Grain boundary evaluation in sequentially laterally solidified polycrystalline-silicon devices

    NASA Astrophysics Data System (ADS)

    Valletta, A.; Bonfiglietti, A.; Rapisarda, M.; Mariucci, L.; Fortunato, G.; Brotherton, S. D.

    2007-05-01

    A systematic study has been made of the conduction process in polycrystalline-silicon thin film transistors (poly-Si TFTs) using carrier flow parallel and perpendicular to sub-grain-boundaries in sequentially laterally solidified material. The objective of this investigation was to obtain an unambiguous characterization of grain boundary (GB) behavior. By studying orthogonal TFTs in this anisotropic material, it was possible to distinguish grain boundary carrier trapping from intragrain trapping. In conventional poly-Si, the material is isotropic over distances greater than the grain size of ˜300nm, and there is no direct and clear-cut way of distinguishing between intragrain and intergrain trapping centers. In the experimental samples, the thermal activation energy of the channel current was measured in the two orthogonal directions, and the difference in activation energy was related to carrier flow over perpendicular sub-GBs. The detailed interpretation of the experimental results was facilitated by two-dimensional numerical simulations, demonstrating that a planar barrier GB, which simply resulted in a potential barrier within the channel, was fundamentally incompatible with the experimental drain current activation energy data. It was only possible to obtain a satisfactory representation of all the experimental data by using a finite width GB, in which carrier flow was controlled by transport across the resistive GB region, rather than by emission over a barrier. This representation of the sub-GB permitted the essential combination of reduced field effect mobility, for orthogonal carrier flow, and a drain current activation energy, which was close to zero.

  5. Very high-cycle fatigue failure in micron-scale polycrystalline silicon films: Effects of environment and surface oxide thickness

    NASA Astrophysics Data System (ADS)

    Alsem, D. H.; Timmerman, R.; Boyce, B. L.; Stach, E. A.; De Hosson, J. Th. M.; Ritchie, R. O.

    2007-01-01

    Fatigue failure in micron-scale polycrystalline silicon structural films, a phenomenon that is not observed in bulk silicon, can severely impact the durability and reliability of microelectromechanical system devices. Despite several studies on the very high-cycle fatigue behavior of these films (up to 1012cycles), there is still an on-going debate on the precise mechanisms involved. We show here that for devices fabricated in the multiuser microelectromechanical system process (MUMPs) foundry and Sandia Ultra-planar, Multi-level MEMS Technology (SUMMiT V™) process and tested under equi-tension/compression loading at ˜40kHz in different environments, stress-lifetime data exhibit similar trends in fatigue behavior in ambient room air, shorter lifetimes in higher relative humidity environments, and no fatigue failure at all in high vacuum. The transmission electron microscopy of the surface oxides in the test samples shows a four- to sixfold thickening of the surface oxide at stress concentrations after fatigue failure, but no thickening after overload fracture in air or after fatigue cycling in vacuo. We find that such oxide thickening and premature fatigue failure (in air) occur in devices with initial oxide thicknesses of ˜4nm (SUMMiT V™) as well as in devices with much thicker initial oxides ˜20nm (MUMPs). Such results are interpreted and explained by a reaction-layer fatigue mechanism. Specifically, moisture-assisted subcritical cracking within a cyclic stress-assisted thickened oxide layer occurs until the crack reaches a critical size to cause catastrophic failure of the entire device. The entirety of the evidence presented here strongly indicates that the reaction-layer fatigue mechanism is the governing mechanism for fatigue failure in micron-scale polycrystalline silicon thin films.

  6. Physical properties optimization of polycrystalline LiFeAs

    NASA Astrophysics Data System (ADS)

    Singh, Shiv J.; Gräfe, Uwe; Beck, Robert; Wolter, Anja U. B.; Grafe, Hans-Joachim; Hess, Christian; Wurmehl, Sabine; Büchner, Bernd

    2016-10-01

    We present a study of parameter optimization for synthesizing truly stoichiometric polycrystalline LiFeAs. Stoichiometric LiFeAs has been prepared in a very broad range of synthesis temperature (200-900 °C) under otherwise exactly the same conditions, and has been characterized by structural, magnetic, transport, nuclear quadrupole resonance (NQR), and specific heat measurements. Our study showed that the LiFeAs phase is formed at 200 °C with a large amount of impurity phases. The amount of these impurity phases reduces with increasing synthesis temperature and the clean LiFeAs phase is obtained at a synthesis temperature of 600 °C. Magnetic susceptibility and resistivity measurements confirmed that the superconducting properties such as the critical temperature Tc, and the upper critical field Hc2 do not depend on the synthesis temperature (≤ 700 °C), remaining at almost the same value of ∼19 K and ∼40 T, respectively. However, the width ΔTc of the transition and the NQR line width decrease with increasing the synthesis temperature and reached to minimum value for the synthesis temperature of 600 °C. Our careful analysis suggests that the best sample obtained at 600 °C is optimal concerning the low resistivity, high residual resistivity ratio (RRR), low ΔTc, high Tc and Hc2, and a small NQR line width with values which are comparable to that reported for LiFeAs single crystals. Specific heat measurements confirmed the bulk superconducting nature of the samples. The Hc2 value estimated from the specific heat is consistent with that of the resistivity measurements. Concisely, 600 °C synthesis temperature yields optimal high quality polycrystalline LiFeAs bulk samples. Further improvement of the quality of the sample prepared at 600 °C could be obtained by a controlled slow cooling process. Microstructural analysis reveals that the abundance of micro-cracks becomes strongly reduced by the slow cooling process, resulting in an increase in clean and

  7. Multiple Diamond Anvil (MDA) apparatus using nano-polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Irifune, T.; Kunimoto, T.; Tange, Y.; Shinmei, T.; Isobe, F.; Kurio, A.; Funakoshi, K.

    2011-12-01

    Thanks to the great efforts by Dave Mao, Bill Bassett, Taro Takahashi, and their colleagues at the University of Rochester through 1960s-70s, diamond anvil cell (DAC) became a major tool to investigate the deep Earth after its invention by scientists at NBS in 1958. DAC can now cover almost the entire pressure and temperature regimes of the Earth's interior, which seems to have solved the longstanding debate on the crystal structure of iron under the P-T conditions of the Earth's inner core. In contrast, various types of static large-volume presses (LVP) have been invented, where tungsten carbide has conventionally been used as anvils. Kawai-type multianvil apparatus (MA), which utilize 6 first-stage harden steel and 8 tungsten carbide anvils, is the most successful LVP, and has been used for accurate measurements of phase transitions, physical properties, element partitioning, etc. at high pressure and temperature. However, pressures using tungsten carbide as the second-stage anvils have been limited to about 30 GPa due to significant plastic deformation of the anvils. Efforts have been made to expand this pressure limit by replacing tungsten carbide anvils with harder sintered diamond (SD) anvils over the last two decades, but the pressures available in KMA with SD anvils have still been limited to below 100 GPa. We succeeded to produce nano-polycrystalline diamond (NPD or HIME-Diamond) in 2003, which is known to have ultrahigh hardness, very high toughness and elastic stiffness, high transmittance of light, relatively low thermal conductivity. These properties are feasible for its use as anvils, and some preliminary experiments of application of NPD anvils to laser heated DAC have successfully made in the last few years. We are now able to synthesize NPD rods with about 1cm in both diameter and length using a newly constructed 6000-ton KMA at Geodynamics Research Center, Ehime University, and have just started to apply this new polycrystalline diamond as anvils

  8. Phase field modeling of grain growth in porous polycrystalline solids

    NASA Astrophysics Data System (ADS)

    Ahmed, Karim E.

    The concurrent evolution of grain size and porosity in porous polycrystalline solids is a technically important problem. All the physical properties of such materials depend strongly on pore fraction and pore and grain sizes and distributions. Theoretical models for the pore-grain boundary interactions during grain growth usually employ restrictive, unrealistic assumptions on the pore and grain shapes and motions to render the problem tractable. However, these assumptions limit the models to be only of qualitative nature and hence cannot be used for predictions. This has motivated us to develop a novel phase field model to investigate the process of grain growth in porous polycrystalline solids. Based on a dynamical system of coupled Cahn-Hilliard and All en-Cahn equations, the model couples the curvature-driven grain boundary motion and the migration of pores via surface diffusion. As such, the model accounts for all possible interactions between the pore and grain boundary, which highly influence the grain growth kinetics. Through a formal asymptotic analysis, the current work demonstrates that the phase field model recovers the corresponding sharp-interface dynamics of the co-evolution of grain boundaries and pores; this analysis also fixes the model kinetic parameters in terms of real materials properties. The model was used to investigate the effect of porosity on the kinetics of grain growth in UO2 and CeO2 in 2D and 3D. It is shown that the model captures the phenomenon of pore breakaway often observed in experiments. Pores on three- and four- grain junctions were found to transform to edge pores (pores on two-grain junction) before complete separation. The simulations demonstrated that inhomogeneous distribution of pores and pore breakaway lead to abnormal grain growth. The simulations also showed that grain growth kinetics in these materials changes from boundary-controlled to pore-controlled as the amount of porosity increases. The kinetic growth

  9. Thin Clouds

    Atmospheric Science Data Center

    2013-04-18

    ... one of a new generation of instruments flying aboard the NASA Earth Observing System's Terra satellite, views Earth with nine cameras ... of thin cirrus minutes after MISR imaged the cloud from space. At the same time, another NASA high-altitude jet, the WB-57, flew right ...

  10. Synthesis and characterization of copper antimony tin sulphide thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Ali, N.; Hussain, A.; Ahmed, R.; Wan Shamsuri, W. N.; Fu, Y. Q.

    2016-12-01

    Low price thin film modules based on Copper antimony tin sulphide (CATS) are introduced for solar harvesting to compete for the already developed compound semiconductors. Here, CATS thin films were deposited on soda lime glass by thermal evaporation technique followed by a rapid thermal annealing in an argon atmosphere. From Our XRD analysis, it was revealed that the annealed samples were poly-crystalline and their crystallinity was improved with increasing annealing temperature. The constituent elements and their corresponding chemical states were identified using X-ray photoelectron spectroscopy. The obtained optical band gap of 1.4 eV for CATS thin film is found nearly equal to GaAs - one of the highly efficient thin film material for solar cell technology. Furthermore, our observed good optical absorbance and low transmittance for the annealed CATS thin films in the visible region of light spectrum assured the aptness of the CATS thin films for solar cell applications.

  11. High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications

    NASA Astrophysics Data System (ADS)

    Jin, Yao O.; John, David Saint; Podraza, Nikolas J.; Jackson, Thomas N.; Horn, Mark W.

    2015-03-01

    Molybdenum oxide (MoOx) and nickel oxide (NiOx) thin films were deposited by reactive biased target ion beam deposition. MoOx thin film resistivity varied from 3 to 2000 Ω.cm with a temperature coefficient of resistance (TCR) from -1.7% to -3.2%/K, and NiOx thin film resistivity varied from 1 to 300 Ω.cm with a TCR from -2.2% to -3.3%/K, both easily controlled by varying the oxygen partial pressure. Biased target ion beam deposited high TCR MoOx and NiOx thin films are polycrystalline semiconductors and have good stability in air. Compared with commonly used vanadium oxide thin films, MoOx or NiOx thin films offer improved process control for resistive temperature sensors.

  12. Photo-Seebeck effect in polycrystalline ZnO

    NASA Astrophysics Data System (ADS)

    Horikawa, Ayaka; Igarashi, Taichi; Terasaki, Ichiro; Okazaki, Ryuji

    2015-09-01

    We have measured the Seebeck coefficient and the resistance under light illumination of 365 nm in a ceramic sample of ZnO at 100, 150, and 200 K, and have analyzed the photo-Seebeck coefficient and the photoconductivity using a two-layer model. We have evaluated the photo-doped carrier concentration from the magnitude of the photo-Seebeck coefficient to be of the order of 1019 cm-3, as is similar to the case of thin-film and single-crystal samples. The photo-doping effects are compared among ceramic, single crystal, and thin-film samples.

  13. Fluorine redistribution in a chemical vapor deposited tungsten/polycrystalline silicon gate structure during heat treatment

    NASA Astrophysics Data System (ADS)

    Eriksson, Th.; Carlsson, J.-O.; Keinonen, J.; Petersson, C. S.

    1988-09-01

    Fluorine redistribution during heat treatment of chemical vapor deposited tungsten/polycrystalline silicon gate structures was analyzed by the nuclear resonance broadening technique. The tungsten layer was deposited from a hydrogen/tungsten hexafluoride gas mixture. Upon heat treatment in the temperature range 1020-1325-K tungsten disilicide formation was observed using Rutherford backscattering spectrometry. In the as-deposited sample, the fluorine was accumulated at the tungsten/polycrystalline silicon interface. After silicide formation the fluorine was observed at the tungsten disilicide/polycrystalline silicon interface. At temperatures above 1120 K fluorine starts to diffuse through the polycrystalline silicon layer. A variation in the total fluorine content between the samples was also observed. The origin of the fluorine redistribution as well as the variation in the total fluorine content is discussed in connection to conceivable mechanisms.

  14. Fluorine redistribution in a chemical vapor deposited tungsten/polycrystalline silicon gate structure during heat treatment

    SciTech Connect

    Eriksson, T.; Carlsson, J.; Keinonen, J.; Petersson, C.S.

    1988-09-15

    Fluorine redistribution during heat treatment of chemical vapor deposited tungsten/polycrystalline silicon gate structures was analyzed by the nuclear resonance broadening technique. The tungsten layer was deposited from a hydrogen/tungsten hexafluoride gas mixture. Upon heat treatment in the temperature range 1020--1325-K tungsten disilicide formation was observed using Rutherford backscattering spectrometry. In the as-deposited sample, the fluorine was accumulated at the tungsten/polycrystalline silicon interface. After silicide formation the fluorine was observed at the tungsten disilicide/polycrystalline silicon interface. At temperatures above 1120 K fluorine starts to diffuse through the polycrystalline silicon layer. A variation in the total fluorine content between the samples was also observed. The origin of the fluorine redistribution as well as the variation in the total fluorine content is discussed in connection to conceivable mechanisms.

  15. Study of polycrystalline silicon obtained by aluminum-induced crystallization depending on process conditions

    NASA Astrophysics Data System (ADS)

    Pereyaslavtsev, Alexander; Sokolov, Igor; Sinev, Leonid

    2016-11-01

    In this paper, we have decided to consider an alternative method of producing polycrystalline silicon and study change of its electrophysical characteristics depending on process parameters. As an alternative low-pressure chemical vapor deposition method appears aluminum-induced crystallization (AIC), which allows to obtain a polycrystalline silicon film is significantly larger grain size, thereby reducing contribution of grain boundaries. A comprehensive study of polycrystalline silicon was carried out using a variety of microscopic (OM, SEM) and spectroscopic (RAMAN, XPS) and diffraction (EBSD, XRD) analytic methods. We also considered possibility of self-doping in AIC, result of which was obtained polycrystalline silicon with different resistance. Additionally considered changes in temperature coefficient of resistance depending on technological parameters of AIC process.

  16. Surface Analysis of 4-Aminothiophenol Adsorption at Polycrystalline Platinum Electrodes

    NASA Technical Reports Server (NTRS)

    Rosario-Castro, Belinda I.; Fachini, Estevao R.; Contes, Enid J.; Perez-Davis, Marla E.; Cabrera, Carlos R.

    2008-01-01

    Formation of self-assembled monolayer (SAM) of 4-aminothiophenol (4-ATP) on polycrystalline platinum electrodes has been studied by surface analysis and electrochemistry techniques. The 4-ATP monolayer was characterized by cyclic voltammetry (CV), Raman spectroscopy, reflection absorption infrared (RAIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). Cyclic voltammetry (CV) experiments give an idea about the packing quality of the monolayer. RAIR and Raman spectra for 4-ATP modified platinum electrodes showed the characteristic adsorption bands for neat 4-ATP indicating the adsorption of 4-ATP molecules on platinum surface. The adsorption on platinum was also evidenced by the presence of sulfur and nitrogen peaks by XPS survey spectra of the modified platinum electrodes. High resolution XPS studies and RAIR spectrum for platinum electrodes modified with 4-ATP indicate that molecules are sulfur-bonded to the platinum surface. The formation of S-Pt bond suggests that ATP adsorption gives up an amino terminated SAM. Thickness of the monolayer was evaluated via angle-resolved XPS (AR-XPS) analyses. Derivatization of 4-ATP SAM was performed using 16-Br hexadecanoic acid.

  17. Finite elastic-plastic deformation of polycrystalline metals

    NASA Technical Reports Server (NTRS)

    Iwakuma, T.; Nemat-Nasser, S.

    1984-01-01

    Applying Hill's self-consistent method to finite elastic-plastic deformations, the overall moduli of polycrystalline solids are estimated. The model predicts a Bauschinger effect, hardening, and formation of vertex or corner on the yield surface for both microscopically non-hardening and hardening crystals. The changes in the instantaneous moduli with deformation are examined, and their asymptotic behavior, especially in relation to possible localization of deformations, is discussed. An interesting conclusion is that small second-order quantities, such as shape changes of grains and residual stresses (measured relative to the crystal elastic moduli), have a first-order effect on the overall response, as they lead to a loss of the overall stability by localized deformation. The predicted incipience of localization for a uniaxial deformation in two dimensions depends on the initial yield strain, but the orientation of localization is slightly less than 45 deg with respect to the tensile direction, although the numerical instability makes it very difficult to estimate this direction accurately.

  18. Optical properties of polycrystalline glass in nanocrystal condition

    NASA Astrophysics Data System (ADS)

    Sultanov, Albert H.; Vinogradova, Irina L.; Salikhov, Aydar I.

    2007-03-01

    Clause is devoted to discussion of an opportunity of reception transparent nanocrystal samples. The opportunity of processing of polycrystalline glass and quartz samples by a method of intensive torsion under a high pressure was investigated. It is established, that because of absence of a zone of plasticity of a material for preservation of integrity of the sample it is necessary to apply heating. The given material is supposed to be used for creation of switchboards of the optical signals operated by in addition submitted optical radiation. It is supposed, that operating radiation changes a parameter of refraction of the optical environment of the device, and with it and length of a wave of information radiation. For the control of last it is used multibeam interferometer. The brief estimation of technical aspects of construction of the device is lead. The analysis has shown, that interference switchboard is essentially technically sold. It is possible to carry presence of a constant component to its basic lacks in interferometer to a picture and distortion by action of interference and nonlinear optical effects ofa digital optical signal.

  19. Polycrystalline-Diamond MEMS Biosensors Including Neural Microelectrode-Arrays.

    PubMed

    Varney, Michael W; Aslam, Dean M; Janoudi, Abed; Chan, Ho-Yin; Wang, Donna H

    2011-08-15

    Diamond is a material of interest due to its unique combination of properties, including its chemical inertness and biocompatibility. Polycrystalline diamond (poly-C) has been used in experimental biosensors that utilize electrochemical methods and antigen-antibody binding for the detection of biological molecules. Boron-doped poly-C electrodes have been found to be very advantageous for electrochemical applications due to their large potential window, low background current and noise, and low detection limits (as low as 500 fM). The biocompatibility of poly-C is found to be comparable, or superior to, other materials commonly used for implants, such as titanium and 316 stainless steel. We have developed a diamond-based, neural microelectrode-array (MEA), due to the desirability of poly-C as a biosensor. These diamond probes have been used for in vivo electrical recording and in vitro electrochemical detection. Poly-C electrodes have been used for electrical recording of neural activity. In vitro studies indicate that the diamond probe can detect norepinephrine at a 5 nM level. We propose a combination of diamond micro-machining and surface functionalization for manufacturing diamond pathogen-microsensors.

  20. Distributions of methyl group rotational barriers in polycrystalline organic solids

    SciTech Connect

    Beckmann, Peter A. E-mail: wangxianlong@uestc.edu.cn; Conn, Kathleen G.; Mallory, Clelia W.; Mallory, Frank B.; Rheingold, Arnold L.; Rotkina, Lolita; Wang, Xianlong E-mail: wangxianlong@uestc.edu.cn

    2013-11-28

    We bring together solid state {sup 1}H spin-lattice relaxation rate measurements, scanning electron microscopy, single crystal X-ray diffraction, and electronic structure calculations for two methyl substituted organic compounds to investigate methyl group (CH{sub 3}) rotational dynamics in the solid state. Methyl group rotational barrier heights are computed using electronic structure calculations, both in isolated molecules and in molecular clusters mimicking a perfect single crystal environment. The calculations are performed on suitable clusters built from the X-ray diffraction studies. These calculations allow for an estimate of the intramolecular and the intermolecular contributions to the barrier heights. The {sup 1}H relaxation measurements, on the other hand, are performed with polycrystalline samples which have been investigated with scanning electron microscopy. The {sup 1}H relaxation measurements are best fitted with a distribution of activation energies for methyl group rotation and we propose, based on the scanning electron microscopy images, that this distribution arises from molecules near crystallite surfaces or near other crystal imperfections (vacancies, dislocations, etc.). An activation energy characterizing this distribution is compared with a barrier height determined from the electronic structure calculations and a consistent model for methyl group rotation is developed. The compounds are 1,6-dimethylphenanthrene and 1,8-dimethylphenanthrene and the methyl group barriers being discussed and compared are in the 2–12 kJ mol{sup −1} range.

  1. Polycrystalline-Diamond MEMS Biosensors Including Neural Microelectrode-Arrays

    PubMed Central

    Varney, Michael W.; Aslam, Dean M.; Janoudi, Abed; Chan, Ho-Yin; Wang, Donna H.

    2011-01-01

    Diamond is a material of interest due to its unique combination of properties, including its chemical inertness and biocompatibility. Polycrystalline diamond (poly-C) has been used in experimental biosensors that utilize electrochemical methods and antigen-antibody binding for the detection of biological molecules. Boron-doped poly-C electrodes have been found to be very advantageous for electrochemical applications due to their large potential window, low background current and noise, and low detection limits (as low as 500 fM). The biocompatibility of poly-C is found to be comparable, or superior to, other materials commonly used for implants, such as titanium and 316 stainless steel. We have developed a diamond-based, neural microelectrode-array (MEA), due to the desirability of poly-C as a biosensor. These diamond probes have been used for in vivo electrical recording and in vitro electrochemical detection. Poly-C electrodes have been used for electrical recording of neural activity. In vitro studies indicate that the diamond probe can detect norepinephrine at a 5 nM level. We propose a combination of diamond micro-machining and surface functionalization for manufacturing diamond pathogen-microsensors. PMID:25586924

  2. Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum

    NASA Astrophysics Data System (ADS)

    Babenko, Vitaliy; Murdock, Adrian T.; Koós, Antal A.; Britton, Jude; Crossley, Alison; Holdway, Philip; Moffat, Jonathan; Huang, Jian; Alexander-Webber, Jack A.; Nicholas, Robin J.; Grobert, Nicole

    2015-07-01

    Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min-1) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials.

  3. Memristive Phenomena in Polycrystalline Single Layer MoS2

    NASA Astrophysics Data System (ADS)

    Sangwan, Vinod; Jariwala, Deep; Kim, In-Soo; Chen, Kan-Sheng; Marks, Tobin; Lauhon, Lincoln; Hersam, Mark; Hersam Laboratory Team

    Recently, a new class of layered two-dimensional semiconductors has shown promise for various electronic applications. In particular, single layer transition metal dichalcogenides (e.g. MoS2) present a host of attractive features such as high electrical conductivity, tunable band-gap, and strong light-matter interaction. However, available growth methods produce large-area polycrystalline films with grain-boundaries and point defects that can be detrimental in conventional electronic devices. In contrast, we have developed unconventional device structures that exploit these defects for useful electronic functions. In particular, we observe grain-boundary mediated memristive phenomena in single layer MoS2 transistors. Memristor current-voltage characteristics depend strongly on the topology of grain-boundaries in MoS2. A grain boundary directly connecting metal electrodes produces thermally assisted switching with dynamic negative differential resistance, whereas a grain boundary bisecting the channel shows non-filamentary soft-switching. In addition, devices with intersecting grain boundaries in the channel show bipolar resistive switching with high on/off ratios up to ~103. Furthermore, the gate electrode in the field-effect geometry can be used to control the absolute resistance of the on and off states. Complementary electrostatic force microscopy, photoluminescence, and Raman microscopy reveal the role of sulfur vacancies in the switching mechanism.

  4. Memristive Phenomena in Polycrystalline Single Layer MoS2

    NASA Astrophysics Data System (ADS)

    Sangwan, Vinod; Jariwala, Deep; Kim, In-Soo; Chen, Kan-Sheng; Marks, Tobin; Lauhon, Lincoln; Hersam, Mark; Hersam Laboratory Team

    Recently, a new class of layered two-dimensional semiconductors has shown promise for various electronic applications. In particular, ultrathin transition metal dichalcogenides (e.g. MoS2) present a host of attractive features such as high carrier mobility and tunable band-gap. However, available growth methods produce polycrystalline films with grain-boundaries and point defects that can be detrimental in conventional electronic devices. In contrast, we have developed unconventional device structures that exploit these defects for useful electronic functions. In particular, we observe grain-boundary mediated memristive phenomena in single layer MoS2 transistors. Memristor current-voltage characteristics depend strongly on the topology of grain-boundaries in MoS2. A grain boundary directly connecting metal electrodes produces thermally assisted switching with dynamic negative differential resistance, whereas a grain boundary bisecting the channel shows non-filamentary soft-switching. In addition, devices with intersecting grain boundaries in the channel show bipolar resistive switching with high on/off ratios up to ~103. Furthermore, the gate electrode in the field-effect geometry can be used to control the absolute resistance of the on and off states. Correlated electrostatic force microscopy, photoluminescence, and Raman microscopy reveal the role of sulfur vacancies in the switching mechanism. This abstract is replacing MAR16-2015-004166 that had exceeded the character limit.

  5. Stress-rupture behavior of small diameter polycrystalline alumina fibers

    NASA Technical Reports Server (NTRS)

    Yun, Hee Mann; Goldsby, Jon C.; Dicarlo, James A.

    1993-01-01

    Continuous length polycrystalline alumina fibers are candidates as reinforcement in high temperature composite materials. Interest therefore exists in characterizing the thermomechanical behavior of these materials, obtaining possible insights into underlying mechanisms, and understanding fiber performance under long term use. Results are reported on the time-temperature dependent strength behavior of Nextel 610 and Fiber FP alumina fibers with grain sizes of 100 and 300 nm, respectively. Below 1000 C and 100 hours, Nextel 610 with the smaller grain size had a greater fast fracture and rupture strength than Fiber FP. The time exponents for stress-rupture of these fibers were found to decrease from approximately 13 at 900 C to below 3 near 1050 C, suggesting a transition from slow crack growth to creep rupture as the controlling fracture mechanism. For both fiber types, an effective activation energy of 690 kJ/mol was measured for rupture. This allowed stress-rupture predictions to be made for extended times at use temperatures below 1000 C.

  6. The interpretation of polycrystalline coherent inelastic neutron scattering from aluminium

    PubMed Central

    Roach, Daniel L.; Ross, D. Keith; Gale, Julian D.; Taylor, Jon W.

    2013-01-01

    A new approach to the interpretation and analysis of coherent inelastic neutron scattering from polycrystals (poly-CINS) is presented. This article describes a simulation of the one-phonon coherent inelastic scattering from a lattice model of an arbitrary crystal system. The one-phonon component is characterized by sharp features, determined, for example, by boundaries of the (Q, ω) regions where one-phonon scattering is allowed. These features may be identified with the same features apparent in the measured total coherent inelastic cross section, the other components of which (multiphonon or multiple scattering) show no sharp features. The parameters of the model can then be relaxed to improve the fit between model and experiment. This method is of particular interest where no single crystals are available. To test the approach, the poly-CINS has been measured for polycrystalline aluminium using the MARI spectrometer (ISIS), because both lattice dynamical models and measured dispersion curves are available for this material. The models used include a simple Lennard-Jones model fitted to the elastic constants of this material plus a number of embedded atom method force fields. The agreement obtained suggests that the method demonstrated should be effective in developing models for other materials where single-crystal dispersion curves are not available. PMID:24282332

  7. Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum

    PubMed Central

    Babenko, Vitaliy; Murdock, Adrian T.; Koós, Antal A.; Britton, Jude; Crossley, Alison; Holdway, Philip; Moffat, Jonathan; Huang, Jian; Alexander-Webber, Jack A.; Nicholas, Robin J.; Grobert, Nicole

    2015-01-01

    Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min−1) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials. PMID:26175062

  8. HighP–TNano-Mechanics of Polycrystalline Nickel

    PubMed Central

    2007-01-01

    We have conducted highP–Tsynchrotron X-ray and time-of-flight neutron diffraction experiments as well as indentation measurements to study equation of state, constitutive properties, and hardness of nanocrystalline and bulk nickel. Our lattice volume–pressure data present a clear evidence of elastic softening in nanocrystalline Ni as compared with the bulk nickel. We show that the enhanced overall compressibility of nanocrystalline Ni is a consequence of the higher compressibility of the surface shell of Ni nanocrystals, which supports the results of molecular dynamics simulation and a generalized model of a nanocrystal with expanded surface layer. The analytical methods we developed based on the peak-profile of diffraction data allow us to identify “micro/local” yield due to high stress concentration at the grain-to-grain contacts and “macro/bulk” yield due to deviatoric stress over the entire sample. The graphic approach of our strain/stress analyses can also reveal the corresponding yield strength, grain crushing/growth, work hardening/softening, and thermal relaxation under highP–Tconditions, as well as the intrinsic residual/surface strains in the polycrystalline bulks. From micro-indentation measurements, we found that a low-temperature annealing (T < 0.4 Tm) hardens nanocrystalline Ni, leading to an inverse Hall–Petch relationship. We explain this abnormal Hall–Petch effect in terms of impurity segregation to the grain boundaries of the nanocrystalline Ni. PMID:21794186

  9. Magnetooptical Voigt effect in rippled polycrystalline Co films

    NASA Astrophysics Data System (ADS)

    Arranz, Miguel A.; Colino, José M.

    2016-10-01

    The magneto-optical properties of eroded polycrystalline Co films were investigated using Kerr and Voigt magnetometry. Both techniques showed the existence of two magnetization axes, parallel and perpendicular to the ripples direction. The study on the polarization rotation of the transmitted light revealed a fine magnetic birefringence correlated to that two-axes magnetic structure. Additionally, the field depencence of that induced rotation depicted asymmetric hysteresis loops, comprising linear (Faraday) and quadratic (Voigt) dependences on the in-plane magnetic field applied to these rippled Co films. This latter contribution, depending on the spin-orbit coupling in crystalline systems, is here uncovered from the different mechanisms for reversing the magnetization along the symmetry axes of the ripples array. That dissimilarity enabled us to characterize its magnetooptical tensor with a two-fold symmetry, yielding the occurrence of magnetic birefringence in the transmitted light. This Voigt effect in uniaxially patterned Co films can be satisfactorily explained in the frame of magnetization reversal along that two-axes magnetic structure.

  10. Platinum-induced structural collapse in layered oxide polycrystalline films

    SciTech Connect

    Wang, Jianlin; Liu, Changhui; Huang, Haoliang; Fu, Zhengping; Peng, Ranran E-mail: yllu@ustc.edu.cn; Zhai, Xiaofang; Lu, Yalin E-mail: yllu@ustc.edu.cn

    2015-03-30

    Effect of a platinum bottom electrode on the SrBi{sub 5}Fe{sub 1−x}Co{sub x}Ti{sub 4}O{sub 18} layered oxide polycrystalline films was systematically studied. The doped cobalt ions react with the platinum to form a secondary phase of PtCoO{sub 2}, which has a typical Delafossite structure with a weak antiferromagnetism and an exceptionally high in-plane electrical conductivity. Formation of PtCoO{sub 2} at the interface partially consumes the cobalt dopant and leads to the structural collapsing from 5 to 4 layers, which was confirmed by X-ray diffraction and high resolution transmission electron microscopy measurements. Considering the weak magnetic contribution from PtCoO{sub 2}, the observed ferromagnetism should be intrinsic of the Aurivillius compounds. Ferroelectric properties were also indicated by the piezoresponse force microscopy. In this work, the platinum induced secondary phase at the interface was observed, which has a strong impact on Aurivillius structural configuration and thus the ferromagnetic and ferroelectric properties.

  11. A study of helium mobility in polycrystalline uranium dioxide

    NASA Astrophysics Data System (ADS)

    Garcia, P.; Martin, G.; Desgardin, P.; Carlot, G.; Sauvage, T.; Sabathier, C.; Castellier, E.; Khodja, H.; Barthe, M.-F.

    2012-11-01

    The mobility of Helium in polycrystalline uranium dioxide was studied by implanting samples with 3He ions at depths of approximately 1 μm and at concentrations in the region of 0.1 at.%. Samples were subsequently annealed at temperatures ranging between 700 °C and 1100 °C. Helium movement was then characterised using three different types of Nuclear Reaction Analysis (NRA) techniques based on the 3He(d,α)p reaction. The fraction of helium released from samples was measured during annealing at high temperature as a function of time. After each annealing sequence, helium depth profiles were obtained for each sample. In some cases, samples were characterised over small areas (60 × 60 μm2), using a micrometre size deuteron beam. This enables the measurement of helium distributions at the surface of samples. Using this novel approach which provides time and space dependent information relating to helium atom location, we show that grain boundaries act as effective short circuits for helium movement and release at all temperatures. Also, at temperatures above approximately 800 °C, in areas around the grain boundaries extending into the grain over distances of the order of microns, helium diffusion is high. In areas further into the grain, diffusion proceeds much more slowly presumably as a result of helium cluster formation. These observations are interpreted based on radiation damage production and annealing processes.

  12. Polycrystalline Mercuric Iodide Films on CMOS Readout Arrays

    PubMed Central

    Hartsough, Neal E.; Iwanczyk, Jan S.; Nygard, Einar; Malakhov, Nail; Barber, William C.; Gandhi, Thulasidharan

    2009-01-01

    We have created high-resolution x-ray imaging devices using polycrystalline mercuric iodide (HgI2) films grown directly onto CMOS readout chips using a thermal vapor transport process. Images from prototype 400×400 pixel HgI2-coated CMOS readout chips are presented, where the pixel grid is 30 μm × 30 μm. The devices exhibited sensitivity of 6.2 μC/Rcm2 with corresponding dark current of ∼2.7 nA/cm2, and a 80 μm FWHM planar image response to a 50 μm slit aperture. X-ray CT images demonstrate a point spread function sufficient to obtain a 50 μm spatial resolution in reconstructed CT images at a substantially reduced dose compared to phosphor-coated readouts. The use of CMOS technology allows for small pixels (30 μm), fast readout speeds (8 fps for a 3200×3200 pixel array), and future design flexibility due to the use of well-developed fabrication processes. PMID:20161098

  13. Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum.

    PubMed

    Babenko, Vitaliy; Murdock, Adrian T; Koós, Antal A; Britton, Jude; Crossley, Alison; Holdway, Philip; Moffat, Jonathan; Huang, Jian; Alexander-Webber, Jack A; Nicholas, Robin J; Grobert, Nicole

    2015-07-15

    Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min(-1)) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials.

  14. Compressive creep of polycrystalline ZrSiO{sub 4}.

    SciTech Connect

    Goretta, K. C.; Cruse, T. A.; Koritala, R. E.; Routbort, J. L.; Melendez-Martinez, J. J.; de Arellano-Lopez, A. R.; Univ. de Sevilla

    2001-08-01

    Polycrystalline ZrSiO{sub 4} ceramics were prepared from commercial powder. Silicate-based glass phase was observed at multiple-grain junctions. compressive creep tests were conducted in Ar at 1197-1400{sup o}C. For stresses of {approx}1-120 MPa, steady-state creep occurred by diffusional flow. For stresses of >3 MPa, the steady-state strain rate {dot {var_epsilon}} could be expressed as {dot {var_epsilon}} = A{sigma}{sup 1.1{+-}0.1}exp - [(470 {+-} 40 kJ/mol)/RT], where A is a constant, {sigma} the steady-state stress, R the gas constant, and T the absolute temperature. At 1400{sup o}C and 1 MPa, an increase in the value of n was observed. Electron microscopy revealed no deformation-induced change in the microstructures of any of the specimens, which is consistent with creep by diffusion-controlled grain-boundary sliding. Comparison with literature data indicated that volume diffusion of oxygen controlled the creep rate.

  15. Recent developments in polycrystalline diamond-drill-bit design

    SciTech Connect

    Huff, C.F.; Varnado, S.G.

    1980-05-01

    Development of design criteria for polycrystalline diamond compact (PDC) drill bits for use in severe environments (hard or fractured formations, hot and/or deep wells) is continuing. This effort consists of both analytical and experimental analyses. The experimental program includes single point tests of cutters, laboratory tests of full scale bits, and field tests of these designs. The results of laboratory tests at simulated downhole conditions utilizing new and worn bits are presented. Drilling at simulated downhole pressures was conducted in Mancos Shale and Carthage Marble. Comparisons are made between PDC bits and roller cone bits in drilling with borehole pressures up to 5000 psi (34.5 PMa) with oil and water based muds. The PDC bits drilled at rates up to 5 times as fast as roller bits in the shale. In the first field test, drilling rates approximately twice those achieved with conventional bits were achieved with a PDC bit. A second test demonstrated the value of these bits in correcting deviation and reaming.

  16. Effects of neutron irradiation on polycrystalline Mg11B2

    NASA Astrophysics Data System (ADS)

    Tarantini, C.; Aebersold, H. U.; Braccini, V.; Celentano, G.; Ferdeghini, C.; Ferrando, V.; Gambardella, U.; Gatti, F.; Lehmann, E.; Manfrinetti, P.; Marré, D.; Palenzona, A.; Pallecchi, I.; Sheikin, I.; Siri, A. S.; Putti, M.

    2006-04-01

    We studied the influence of the disorder introduced in polycrystalline MgB2 samples by neutron irradiation. To circumvent self-shielding effects due to the strong interaction between thermal neutrons and B10 we employed isotopically enriched B11 which contains 40 times less B10 than natural B. The comparison of electrical and structural properties of different series of samples irradiated in different neutron sources, also using Cd shields, allowed us to conclude that, despite the low B10 content, the main damage mechanisms are caused by thermal neutrons, whereas fast neutrons play a minor role. Irradiation leads to an improvement in both upper critical field and critical current density for an exposure level in the range 1-2×1018cm-2 . With increasing fluence the superconducting properties are depressed. An in-depth analysis of the critical field and current density behavior has been carried out to identify what scattering and pinning mechanisms come into play. Finally, the correlation between some characteristic lengths and the transition widths is analyzed.

  17. High P-T Nano-Mechanics of Polycrystalline Nickel

    NASA Astrophysics Data System (ADS)

    Zhao, Yusheng; Shen, T. D.; Zhang, Jianzhong

    2007-10-01

    We have conducted high P-T synchrotron X-ray and time-of-flight neutron diffraction experiments as well as indentation measurements to study equation of state, constitutive properties, and hardness of nanocrystalline and bulk nickel. Our lattice volume-pressure data present a clear evidence of elastic softening in nanocrystalline Ni as compared with the bulk nickel. We show that the enhanced overall compressibility of nanocrystalline Ni is a consequence of the higher compressibility of the surface shell of Ni nanocrystals, which supports the results of molecular dynamics simulation and a generalized model of a nanocrystal with expanded surface layer. The analytical methods we developed based on the peak-profile of diffraction data allow us to identify “micro/local” yield due to high stress concentration at the grain-to-grain contacts and “macro/bulk” yield due to deviatoric stress over the entire sample. The graphic approach of our strain/stress analyses can also reveal the corresponding yield strength, grain crushing/growth, work hardening/softening, and thermal relaxation under high P-T conditions, as well as the intrinsic residual/surface strains in the polycrystalline bulks. From micro-indentation measurements, we found that a low-temperature annealing ( T < 0.4 Tm) hardens nanocrystalline Ni, leading to an inverse Hall-Petch relationship. We explain this abnormal Hall-Petch effect in terms of impurity segregation to the grain boundaries of the nanocrystalline Ni.

  18. Polycrystalline superhard material and method of producing thereof

    SciTech Connect

    Bakul, V.N.; Deryagin, B.V.; Fedoseev, D.V.; Gerasimenko, V.K.; Nikitin, J.I.; Poltoratsky, V.G.; Prikhna, A.I.; Varnin, V.P.; Vnukov, S.P.

    1980-09-02

    The proposed polycrystalline superhard material comprises sintered particles of cubic boron nitride coated over the whole surface thereof with a layer of a crystalline compound of the chemical formula BsNyCz, where x, y and z can assume any value from 0 to 1, said compound binding together the particles of the cubic boron nitride. According to the present invention the proposed material is produced in the following way: particles of cubic boron nitride are placed in a flow of a gas containing carbon for a carbon layer 1-100 a thick to be built up on the whole surface of said particles. Then the particles of cubic boron nitride with the carbon layer built up over the whole surface of the particles are subjected to sintering at a temperature and under a pressure corresponding to the region of thermodynamic stability of cubic boron nitride. The herein-proposed material is highly uniform and features mechanical properties superior to those of the known cubic boron nitride materials. Thus, for example, under the identical conditions of cutting, durability of cutters made from the proposed material is 2-5 times higher than that of the cutters made from the known material based on cubic boron nitride.

  19. Intergranular stress distributions in polycrystalline aggregates of irradiated stainless steel

    NASA Astrophysics Data System (ADS)

    Hure, J.; El Shawish, S.; Cizelj, L.; Tanguy, B.

    2016-08-01

    In order to predict InterGranular Stress Corrosion Cracking (IGSCC) of post-irradiated austenitic stainless steel in Light Water Reactor (LWR) environment, reliable predictions of intergranular stresses are required. Finite elements simulations have been performed on realistic polycrystalline aggregate with recently proposed physically-based crystal plasticity constitutive equations validated for neutron-irradiated austenitic stainless steel. Intergranular normal stress probability density functions are found with respect to plastic strain and irradiation level, for uniaxial loading conditions. In addition, plastic slip activity jumps at grain boundaries are also presented. Intergranular normal stress distributions describe, from a statistical point of view, the potential increase of intergranular stress with respect to the macroscopic stress due to grain-grain interactions. The distributions are shown to be well described by a master curve once rescaled by the macroscopic stress, in the range of irradiation level and strain considered in this study. The upper tail of this master curve is shown to be insensitive to free surface effect, which is relevant for IGSCC predictions, and also relatively insensitive to small perturbations in crystallographic texture, but sensitive to grain shapes.

  20. Creep behavior for advanced polycrystalline SiC fibers

    SciTech Connect

    Youngblood, G.E.; Jones, R.H.; Kohyama, Akira

    1997-08-01

    A bend stress relaxation (BSR) test is planned to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Baseline 1 hr and 100 hr BSR thermal creep {open_quotes}m{close_quotes} curves have been obtained for five selected advanced SiC fiber types and for standard Nicalon CG fiber. The transition temperature, that temperature where the S-shaped m-curve has a value 0.5, is a measure of fiber creep resistance. In order of decreasing thermal creep resistance, with the 100 hr BSR transition temperature given in parenthesis, the fibers ranked: Sylramic (1261{degrees}C), Nicalon S (1256{degrees}C), annealed Hi Nicalon (1215{degrees}C), Hi Nicalon (1078{degrees}C), Nicalon CG (1003{degrees}C) and Tyranno E (932{degrees}C). The thermal creep for Sylramic, Nicalon S, Hi Nicalon and Nicalon CG fibers in a 5000 hr irradiation creep BSR test is projected from the temperature dependence of the m-curves determined during 1 and 100 hr BSR control tests.

  1. The initial interactions of oxygen with polycrystalline titanium surfaces

    NASA Astrophysics Data System (ADS)

    Azoulay, A.; Shamir, N.; Fromm, E.; Mintz, M. H.

    1997-01-01

    The interactions of gaseous oxygen and different types of polycrystalline titanium surfaces were studied at room temperature within the exposure range of 0-1000 L. Combined measurements utilizing direct recoils spectrometry (DRS), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and work function variations enabled the distinction between processes occurring on the topmost atomic layer and those associated with subsurface incorporation of oxygen. Also, the different chemical forms (oxidation states) developing during the exposure course were identified. The results were compared for three types of surfaces, each prepared by a different cleaning procedure. It has been concluded that: (i) Oxygen initially accumulates on the topmost atomic layer, regardless of the type of the studied surface. No preferred subsurface occupation has been observed. (ii) The kinetics of initial accumulation (up to a complete surface coverage) are similar for all the different types of surfaces. (iii) Mixtures of different oxidation states of titanium (0, +2, +3, +4) are present during the whole course of exposure. Qualitatively, increasing proportions of the higher valence states are displayed for higher oxygen exposures. However, the quantitative estimates of their relative amounts indicate a strong dependence on the type of surface, with preferred high oxidation (+4) states obtained for high temperature annealed samples (as compared with room temperature sputtered surfaces). (iv) Topmost oxygen atoms which terminate the oxides surfaces are less negatively charged than the underlying (i.e., subsurface) "oxidic" atoms. These results may account for some of the controversies presented in the literature.

  2. Light scattering from impurity enhanced liquid layers in polycrystalline ice

    NASA Astrophysics Data System (ADS)

    Thomson, E. S.; Wettlaufer, J. S.; Wilen, L. A.

    2009-12-01

    Impurity enhanced grain boundary premelting underlies a wide range of geophysical phenomena throughout the cryosphere. In particular, it is known that when water droplets freeze in the atmosphere they are highly polycrystalline and impurities are rejected into grain boundaries. The predicted character and sensitivity of grain boundaries to impurities close to the melting point precludes the use of standard techniques for imaging the interface. Unlike their larger more macroscopic relatives such as veins (3 grain intersections) and nodes (4 grain intersections), grain boundaries do not submit to optical microscopy. However, using an experimental light scattering method grain boundary changes can be measured as a function of thermodynamic variables. Accurate analysis of the light scattering data generated using this method requires a full theory of light propagation through the grain boundary layer straddled by ice crystals. Here we present a theory for light scattering from such a boundary, experimental data using NaCl as a dopant, and dicsuss atmospheric implications from the troposphere to the stratosphere.

  3. Size effects and Hall-Petch relation in polycrystalline cobalt

    NASA Astrophysics Data System (ADS)

    Fleurier, Gwendoline; Hug, Eric; Martinez, Mayerling; Dubos, Pierre-Antoine; Keller, Clément

    2015-02-01

    The mechanical behaviour of polycrystalline hexagonal close-packed cobalt was investigated over a large range of grain size d in order to examine the occurrence of size effects. Crystallographic texture and amount of face centred cubic allotropic phase were maintained unchanged thanks to appropriate heat treatment procedures. The Hall-Petch (HP) relation exhibits two distinct behaviours from the very beginning of plastic strain levels. The conventional HP law is fulfilled for a number of grains across the thickness t higher than a critical value (t/d)c = 14. For t/d lower than (t/d)c, a multicrystalline regime is evidenced highlighting a strong reduction in flow stress. The high value of (t/d)c is related to the low-stacking fault energy of cobalt in the basal plane. The size effect is predominant in the first work hardening stage where slip mechanisms and stacking faults predominate. In the second stage, driven by mechanical twinning processes, this effect is less sensitive. Finally, the size effect could also affect the end of the elastic stage, in link with nonlinear elasticity mechanisms.

  4. Processing of transparent polycrystalline AlON:Ce3+ scintillators

    DOE PAGES

    Chen, Ching -Fong; Yang, Pin; King, Graham; ...

    2015-10-23

    A new polycrystalline ceramic scintillator is reported for potential use in radiation detection and medical imaging applications. The goal was to develop cerium-activated aluminum oxynitride (AlON:Ce3+) ceramics, which can be produced using ceramic processes in comparison to the high-cost, low-yield single-crystal growth technique. A phase pure AlON:Ce3+ powder with cubic symmetry was successfully synthesized at high temperature under a reducing atmosphere to convert Ce4+ to Ce3+ in the solid solution. We explored two different activator concentrations (0.5 and 1.0 mol%). Fully dense and transparent AlON:Ce3+ ceramics were produced by a liquid-phase-assisted pressureless sintering. The crystal field splitting around the Ce3+more » activator in the AlON was comparable to the splitting induced by Br₋ and the Cl₋ ligands, which produced an emission spectrum perfectly matching the maximum quantum efficiency range of the photomultiplier tube for radiation detection. Both optical excitation and radiation ionizations in AlON:Ce3+ were demonstrated. Lastly, challenges and mechanisms related to the radioluminescence efficiency are discussed.« less

  5. Recombination-active defects in silicon ribbon and polycrystalline solar cells

    NASA Technical Reports Server (NTRS)

    Cheng, L. J.

    1984-01-01

    This paper reports results from a study of recombination-active structural defects in silicon ribbon and polycrystalline solar cells using the electron beam induced current (EBIC) technique in a scanning electron microscope. It is demonstrated that low temperature EBIC measurements can reveal a range of defects that are not observable at room temperature, including slip dislocations in silicon dendritic web ribbons as well as decorated twin boundaries and dislocation complexes in cast polycrystalline silicon solar cell materials.

  6. The effect of heat treatment on the resistivity of polycrystalline silicon films

    NASA Technical Reports Server (NTRS)

    Fripp, A. L., Jr.

    1975-01-01

    The resistivity of doped polycrystalline silicon films has been studied as a function of post deposition heat treatments in an oxidizing atmosphere. It was found that a short oxidation cycle may produce a resistivity increase as large as three orders of magnitude in the polycrystalline films. The extent of change was dependent on the initial resistivity and the films' doping level and was independent of the total oxidation time.

  7. Method for production of free-standing polycrystalline boron phosphide film

    DOEpatents

    Baughman, Richard J.; Ginley, David S.

    1985-01-01

    A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.

  8. Free-standing polycrystalline boron phosphide film and method for production thereof

    DOEpatents

    Baughman, R.J.; Ginley, D.S.

    1982-09-09

    A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.

  9. Development of a cw polycrystalline Cr 2+ : ZnSe laser

    NASA Astrophysics Data System (ADS)

    Di Lieto, A.; Tonelli, M.

    2003-03-01

    We present the preliminary results regarding the operation of a Cr 2+ : ZnSe laser, based on a polycrystalline sample that was prepared at the Dipartimento di Fisica of the Università di Pisa. The performance of this active medium for laser action is compared with that of a single crystal, showing the actual possibility of developing good quality systems based on polycrystalline samples.

  10. Understanding of Defect Physics in Polycrystalline Photovoltaic Materials: Preprint

    SciTech Connect

    Yan, Y.

    2011-07-01

    The performance of thin-film solar cells is influenced by the quality of interfaces and formation of defects such as point defects, stacking faults, twins, dislocations, and grain boundaries. It is important to understand the defect physics so that appropriate methods may be developed to suppress the formation of harmful defects. Here, we review our understanding of defect physics in thin-film photovoltaic (PV) materials such as Si, CdTe, Cu(In,Ga)Se2 (CIGS), Cu2ZnSnSe2 (CZTSe), and Cu2ZnSnS2 (CZTS) using the combination of nanoscale electron microscopy characterization and density-functional theory (DFT). Although these thin-film PV materials share the same basic structural feature - diamond structure based - the defect physics in them could be very different. Some defects, such as stacking faults and special twins, have similar electronic properties in these thin-film materials. However, some other defects, such as grain boundaries and interfaces, have very different electronic properties in these materials. For example, grain boundaries produce harmful deep levels in Si and CdTe, but they do not produce significant deep levels in CIGS, CZTSe, and CZTS. These explain why passivation is critical for Si and CdTe solar cells, but is less important in CIS and CZTS solar cells. We further provide understanding of the effects of interfaces on the performance of solar cells made of these PV materials.

  11. Growth and characterization of organic ferroelectric croconic acid thin films

    NASA Astrophysics Data System (ADS)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Enders, Axel; Gruverman, Alexei; Xu, Xiaoshan

    Using vapor phase evaporation, we have studied the growth of the croconic acid (CCA) thin films, at various conditions such as temperature, thickness, growth speed, and substrates. The morphology of thin film was measured by atomic force microscopy (AFM); the ferroelectric property was confirmed by piezoresponse force microscopy (PFM). A critical thickness of 40 nm and optimal temperature of -30 celsius were found for continuous films, while the substrate and growth speed are found to play a minimal role. According to the reflection high energy electron diffraction (RHEED), the CCA films are polycrystalline. For a 40 nm continuous film, the roughness is about 3 nm, while the coercive voltage for the ferroelectric domain switching is approximately 7V. This is the first molecule ferroelectric thin film. The successful growth of continuous CCA films enhances the applications potential of CCA, which is a molecular crystal of ferroelectricity. Supported by NSF through UNL MRSEC (DMR-1420645).

  12. Structural and optical properties of nanoscale Galinobisuitite thin films.

    PubMed

    Abd-Elkader, Omar H; Deraz, N M

    2014-01-27

    Galinobisuitite thin films of (Bi2S3)(PbS) were prepared using the chemical bath deposition technique (CBD). Thin films were prepared by a modified chemical deposition process by allowing the triethanolamine (TEA) complex of Bi(3+) and Pb(2+) to react with S(2)- ions, which are released slowly by the dissociation of the thiourea (TU) solution. The films are polycrystalline and the average crystallite size is 35 nm. The composition of the films was measured using the atomic absorption spectroscopy (AAS) technique. The films are very adherent to the substrates. The crystal structure of Galinobisuitite thin films was calculated by using the X-ray diffraction (XRD) technique. The surface morphology and roughness of the films were studied using scanning electron microscopes (SEM), transmission electron microscopes (TEM) and stylus profilers respectively. The optical band gaps of the films were estimated from optical measurements.

  13. Structural and Optical Properties of Nanoscale Galinobisuitite Thin Films

    PubMed Central

    Abd-Elkader, Omar H.; Deraz, N. M.

    2014-01-01

    Galinobisuitite thin films of (Bi2S3)(PbS) were prepared using the chemical bath deposition technique (CBD). Thin films were prepared by a modified chemical deposition process by allowing the triethanolamine (TEA) complex of Bi3+ and Pb2+ to react with S2− ions, which are released slowly by the dissociation of the thiourea (TU) solution. The films are polycrystalline and the average crystallite size is 35 nm. The composition of the films was measured using the atomic absorption spectroscopy (AAS) technique. The films are very adherent to the substrates. The crystal structure of Galinobisuitite thin films was calculated by using the X-ray diffraction (XRD) technique. The surface morphology and roughness of the films were studied using scanning electron microscopes (SEM), transmission electron microscopes (TEM) and stylus profilers respectively. The optical band gaps of the films were estimated from optical measurements. PMID:24473136

  14. Single Source Precursors for Thin Film Solar Cells

    NASA Technical Reports Server (NTRS)

    Banger, Kulbinder K.; Hollingsworth, Jennifer A.; Harris, Jerry D.; Cowen, Jonathan; Buhro, William E.; Hepp, Aloysius F.

    2002-01-01

    The development of thin film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power, (W/kg). The use of a polycrystalline chalcopyrite absorber layer for thin film solar cells is considered as the next generation photovoltaic devices. At NASA GRC we have focused on the development of new single source precursors (SSP) and their utility to deposit the chalcopyrite semi-conducting layer (CIS) onto flexible substrates for solar cell fabrication. The syntheses and thermal modulation of SSPs via molecular engineering is described. Thin-film fabrication studies demonstrate the SSPs can be used in a spray CVD (chemical vapor deposition) process, for depositing CIS at reduced temperatures, which display good electrical properties, suitable for PV (photovoltaic) devices.

  15. Surface wave propagation in thin silver films under residual stress

    NASA Astrophysics Data System (ADS)

    Njeh, Anuar; Wieder, Thomas; Schneider, D.; Fuess, Hartmut; Ben Ghozlen, M. H.

    Investigations using surface acoustic waves provide information on the elastic properties of thin films. Residual stresses change the phase velocity of the surface waves. We have calculated phase velocity and dispersion of surface waves in thin silver films with a strong [111]-fibre texture. A non-linear description of surface waves propagating along the [110]-direction of the substrate has been developed on the basis of an acoustoelastic theory, taking into account residual stresses. The relative change delta_v/v of the velocity v was found to be lin-ear for large excitation frequencies. The dispersion curves were measured using a photoa-coustic method. For sputtered polycrystalline thin silver films we found good agreement be-tween the experimental and calculated dispersion curves for frequencies up to 225 MHz.

  16. Thin Film?

    NASA Astrophysics Data System (ADS)

    Kariper, İ. Afşin

    2014-09-01

    This study focuses on the critical surface tension of lead sulfite (PbSO3) crystalline thin film produced with chemical bath deposition on substrates (commercial glass).The PbSO3 thin films were deposited at room temperature at different deposition times. The structural properties of the films were defined and examined according to X-ray diffraction (XRD) and the XRD results such as dislocation density, average grain size, and no. of crystallites per unit area. Atomic force microscopy was used to measure the film thickness and the surface properties. The critical surface tension of the PbSO3 thin films was measured with an optical tensiometer instrument and calculated using the Zisman method. The results indicated that the critical surface tension of films changed in accordance with the average grain size and film thickness. The film thickness increased with deposition time and was inversely correlated with surface tension. The average grain size increased according to deposition time and was inversely correlated with surface tension.

  17. Premelting and the Water Budget in Polycrystalline Ice

    NASA Astrophysics Data System (ADS)

    Thomson, E. S.; Wilen, L. A.; Wettlaufer, J. S.

    2008-12-01

    A number of mechanisms, generally classified as premelting are responsible for the presence of liquid water at ice interfaces at temperatures well below 0°C . Premelting includes the familiar colligative effects of ions and other impurities, which lower the chemical potential of the liquid solvent, and the Gibbs-Thomson effect which describes the lowering of the melting point for a solid convex into its melt. Such phenomena are known to influence the amount of water in natural and laboratory polycrystalline ice and to control the thermal, chemical, and material transport properties. Thus, liquid water within the solid ice matrix influences the behavior of terrestrial ice over a wide range of length and time scales, from the macroscopic behavior of temperate glacier ice to the distribution of climate proxies within polar ice sheets. Using optical microscopy observations of ice near its melting temperature, rough bounds have been put on the length scales and dihedral angle associated with the liquid network in ice. However, these techniques cannot resolve whether the boundary between any two grains is wet or dry. For this, a more refined light scattering method has been developed. This method and the results are described both in the context of the basic physics and the application to the geophysical setting. The importance of this approach is broad, with implications ranging from the understanding of the role of intermolecular forces in the wetting properties of the ice/ice interface to constructing a budget for the total amount of water in an ice sheet. Additionally, basic applications of grain boundary melting are important in fields from metallurgy and materials science to mineral physics and geoengineering.

  18. Intergranular Strain Evolution near Fatigue Crack Tips in Polycrystalline Metals

    SciTech Connect

    Zheng, Lili; Gao, Yanfei; Lee, Sooyeol; Barabash, Rozaliya; Lee, Jinhaeng; Liaw, Peter K

    2011-01-01

    The deformation field near a steady fatigue crack includes a plastic zone in front of the crack tip and a plastic wake behind it, and the magnitude, distribution, and history of the residual strain along the crack path depend on the stress multiaxiality, material properties, and history of stress intensity factor and crack growth rate. An in situ, full-field, non-destructive measurement of lattice strain (which relies on the intergranular interactions of the inhomogeneous deformation fields in neighboring grains) by neutron diffraction techniques has been performed for the fatigue test of a Ni-based superalloy compact tension specimen. These microscopic grain level measurements provided unprecedented information on the fatigue growth mechanisms. A two-scale model is developed to predict the lattice strain evolution near fatigue crack tips in polycrystalline materials. An irreversible, hysteretic cohesive interface model is adopted to simulate a steady fatigue crack, which allows us to generate the stress/strain distribution and history near the fatigue crack tip. The continuum deformation history is used as inputs for the micromechanical analysis of lattice strain evolution using the slip-based crystal plasticity model, thus making a mechanistic connection between macro- and micro-strains. Predictions from perfect grain-boundary simulations exhibit the same lattice strain distributions as in neutron diffraction measurements, except for discrepancies near the crack tip within about one-tenth of the plastic zone size. By considering the intergranular damage, which leads to vanishing intergranular strains as damage proceeds, we find a significantly improved agreement between predicted and measured lattice strains inside the fatigue process zone. Consequently, the intergranular damage near fatigue crack tip is concluded to be responsible for fatigue crack growth.

  19. Intergranular strain evolution near fatigue crack tips in polycrystalline metals

    NASA Astrophysics Data System (ADS)

    Zheng, L. L.; Gao, Y. F.; Lee, S. Y.; Barabash, R. I.; Lee, J. H.; Liaw, P. K.

    2011-11-01

    The deformation field near a steady fatigue crack includes a plastic zone in front of the crack tip and a plastic wake behind it, and the magnitude, distribution, and history of the residual strain along the crack path depend on the stress multiaxiality, material properties, and history of stress intensity factor and crack growth rate. An in situ, full-field, non-destructive measurement of lattice strain (which relies on the intergranular interactions of the inhomogeneous deformation fields in neighboring grains) by neutron diffraction techniques has been performed for the fatigue test of a Ni-based superalloy compact tension specimen. These microscopic grain level measurements provided unprecedented information on the fatigue growth mechanisms. A two-scale model is developed to predict the lattice strain evolution near fatigue crack tips in polycrystalline materials. An irreversible, hysteretic cohesive interface model is adopted to simulate a steady fatigue crack, which allows us to generate the stress/strain distribution and history near the fatigue crack tip. The continuum deformation history is used as inputs for the micromechanical analysis of lattice strain evolution using the slip-based crystal plasticity model, thus making a mechanistic connection between macro- and micro-strains. Predictions from perfect grain-boundary simulations exhibit the same lattice strain distributions as in neutron diffraction measurements, except for discrepancies near the crack tip within about one-tenth of the plastic zone size. By considering the intergranular damage, which leads to vanishing intergranular strains as damage proceeds, we find a significantly improved agreement between predicted and measured lattice strains inside the fatigue process zone. Consequently, the intergranular damage near fatigue crack tip is concluded to be responsible for fatigue crack growth.

  20. The low field microwave effective linewidth in polycrystalline ferrites

    NASA Astrophysics Data System (ADS)

    Mo, Nan; Green, Jerome J.; Krivosik, Pavol; Patton, Carl E.

    2007-01-01

    High precision measurements on the low and high field effective linewidth ΔHeff at 10GHz have been made on ultradense (UD) and conventionally sintered (CS) polycrystalline yttrium iron garnet (YIG) materials. The high field data confirm previous results on the role of two magnon scattering to low wave number (k ) electromagnetic Larmor branch spin waves that lie below the light line. The low field data reveal two important contributions to the effective linewidth. For a field regime from the low k edge of the usual dipole exchange spin wave band down to the point in field (H=HX) where above-the-light-line electromagnetic branch Larmor (EML-HI) spin waves appear, ΔHeff is connected with scattering to relatively high k dipole exchange Larmor (DEL) spin waves. The coupling to these modes comes from grain boundaries in the YIG materials. A grain boundary scattering theory gives reasonable agreement with the data. While the high field effective linewidth due to pseudo in-manifold scattering is larger for the CS samples compared to that for the UD samples, the high k DEL scattering is larger for the UD samples compared to that for the CS samples. This is due to the dominant role of the grain boundaries in the low field ΔHeff. For fields below HX, additional scattering appears for the EML-HI modes. The abrupt appearance of an additional ΔHeff component for H