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Sample records for polycrystalline 3c-sic thin

  1. Polycrystalline thin film photovoltaic technology

    SciTech Connect

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L.; Noufi, R.

    1991-03-01

    Low-cost, high-efficiency thin-film modules are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. In this paper we review the significant technical progress made in the following thin films: copper indium diselenide, cadmium telluride, and polycrystalline thin silicon films. Also, the recent US DOE/SERI initiative to commercialize these emerging technologies is discussed. 6 refs., 9 figs.

  2. Polycrystalline thin films FY 1992 project report

    SciTech Connect

    Zweibel, K.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  3. Polycrystalline thin films FY 1992 project report

    SciTech Connect

    Zweibel, K.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  4. US polycrystalline thin film solar cells program

    SciTech Connect

    Ullal, H S; Zweibel, K; Mitchell, R L

    1989-11-01

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

  5. Modeling of polycrystalline thin film solar cells

    NASA Astrophysics Data System (ADS)

    Fahrenbruch, Alan L.

    1999-03-01

    This paper describes modeling polycrystalline thin-film solar cells using the program AMPS-1D1 to visualize the relationships between the many variables involved. These simulations are steps toward two dimensional modeling the effects of grain boundaries in polycrystalline cells. Although this paper describes results for the CdS/CdTe cell, the ideas presented here are applicable to copper-indium-gallium selenide (CIGS) cells as well as other types of cells. Results of these one-dimensional simulations are presented: (a) the duplication of experimentally observed cell parameters, (b) the effects of back-contact potential barrier height and its relation to stressing the cell, (c) the effects of the depletion layer width in the CdTe layer on cell parameters, and (d) the effects of CdS layer thickness on the cell parameters. Experience using the software is also described.

  6. Polycrystalline thin film materials and devices

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. . Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  7. Polycrystalline-thin-film thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  8. Progress in polycrystalline thin-film solar cells

    SciTech Connect

    Zweibel, K; Hermann, A; Mitchell, R

    1983-07-01

    Photovoltaic devices based on several polycrystalline thin-film materials have reached near and above 10% sunlight-to-electricity conversion efficiencies. This paper examines the various polycrystalline thin-film PV materials including CuInSe/sub 2/ and CdTe in terms of their material properties, fabrication techniques, problems, and potentials.

  9. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect

    Not Available

    2013-06-01

    This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

  10. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

  11. Polycrystalline thin film materials and devices

    NASA Astrophysics Data System (ADS)

    Baron, B. N.; Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E.

    1991-11-01

    Results and conclusions of Phase 1 of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe2 and CdTe solar cells. The kinetics of the formation of CuInSe2 by selenization with hydrogen selenide was investigated and a CuInSe2/Cds solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe2 films and a cell efficiency of 7 percent. Detailed investigations of the open circuit voltage of CuInSe2 solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe2 thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe2 is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10 percent can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm(exp 2) are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.

  12. Research on polycrystalline thin-film materials, cells, and modules

    SciTech Connect

    Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

    1990-11-01

    The US Department of Energy (DOE) supports research activities in polycrystalline thin films through the Polycrystalline Thin-Film Program at the Solar Energy Research Institute (SERI). This program includes research and development (R D) in both copper indium diselenide and cadmium telluride thin films for photovoltaic applications. The objective of this program is to support R D of photovoltaic cells and modules that meet the DOE long-term goals of high efficiency (15%--20%), low cost ($50/m{sup 2}), and reliability (30-year life time). Research carried out in this area is receiving increased recognition due to important advances in polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules. These have become the leading thin-film materials for photovoltaics in terms of efficiency and stability. DOE has recognized this potential through a competitive initiative for the development of CuInSe{sub 2} and CdTe modules. This paper focuses on the recent progress and future directions of the Polycrystalline Thin-Film Program and the status of the subcontracted research on these promising photovoltaic materials. 26 refs., 12 figs, 1 tab.

  13. Polycrystalline Thin Film Device Degradation Studies

    SciTech Connect

    Albin, D. S.; McMahon, T. J.; Pankow, J. W.; Noufi, R.; Demtsu, S. H.; Davies, A.

    2005-11-01

    Oxygen during vapor CdCl2 (VCC) treatments significantly reduced resistive shunts observed in CdS/CdTe polycrystalline devices using thinner CdS layers during 100 deg C, open-circuit, 1-sun accelerated stress testing. Cu oxidation resulting from the reduction of various trace oxides present in as-grown and VCC treated films is the proposed mechanism by which Cu diffusion, and subsequent shunts are controlled. Graphite paste layers between metallization and CdTe behave like diffusion barriers and similarly benefit device stability. Ni-based contacts form a protective Ni2Te3 intermetallic layer that reduces metal diffusion but degrades performance through increased series resistance.

  14. Dynamical electrophotoconductivity in polycrystalline thin films

    NASA Technical Reports Server (NTRS)

    Kowel, S. T.; Kornreich, P. G.

    1982-01-01

    Polycrystalline cadmium sulfide (CdS) films were deposited on lithium niobate (LiNbO3) substrates by vacuum evaporation and annealed to obtain high photosensitivity. The change in photoconductivity of these films due to the penetration of electric fields associated with elastic waves propagating on their substrates was demonstrated and studied. The relationship between the acoustic electric field and the induced change in film conductivity was found to be a nonlinear one. The fractional change in conductivity is strongly dependent on the light intensity and the film temperature, showing a prominent maximum as a function of these quantities. The largest recorded fractional change in conductivity was about 25% at electric fields of the order of 1,000 volts per centimeter. A phenomological model was developed based on the interaction between the space charge created by the electric field and the electron trapping states in the photoconductor.

  15. Polycrystalline thin-film solar cells and modules

    SciTech Connect

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  16. Flexible polycrystalline thin-film photovoltaics for space applications

    NASA Technical Reports Server (NTRS)

    Armstrong, J. H.; Lanning, B. R.; Misra, M. S.; Kapur, V. K.; Basol, B. M.

    1993-01-01

    Polycrystalline thin-film photovoltaics (PV), such as CIS and CdTe, have received considerable attention recently with respect to space power applications. Their combination of stability, efficiency, and economy from large-scale monolithic-integration of modules can have significant impact on cost and weight of PV arrays for spacecraft and planetary experiments. An added advantage, due to their minimal thickness (approximately 6 microns sans substrate), is the ability to manufacture lightweight, flexible devices (approximately 2000 W/kg) using large-volume manufacturing techniques. The photovoltaic effort at Martin Marietta and ISET is discussed, including large-area, large-volume thin-film deposition techniques such as electrodeposition and rotating cylindrical magnetron sputtering. Progress in the development of flexible polycrystalline thin-film PV is presented, including evaluation of flexible CIS cells. In addition, progress on flexible CdTe cells is presented. Finally, examples of lightweight, flexible arrays and their potential cost and weight impact is discussed.

  17. Polycrystalline thin-film solar cells and modules

    SciTech Connect

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  18. Flexible polycrystalline thin-film photovoltaics for space applications

    NASA Astrophysics Data System (ADS)

    Armstrong, J. H.; Lanning, B. R.; Misra, M. S.; Kapur, V. K.; Basol, B. M.

    1993-05-01

    Polycrystalline thin-film photovoltaics (PV), such as CIS and CdTe, have received considerable attention recently with respect to space power applications. Their combination of stability, efficiency, and economy from large-scale monolithic-integration of modules can have significant impact on cost and weight of PV arrays for spacecraft and planetary experiments. An added advantage, due to their minimal thickness (approximately 6 microns sans substrate), is the ability to manufacture lightweight, flexible devices (approximately 2000 W/kg) using large-volume manufacturing techniques. The photovoltaic effort at Martin Marietta and ISET is discussed, including large-area, large-volume thin-film deposition techniques such as electrodeposition and rotating cylindrical magnetron sputtering. Progress in the development of flexible polycrystalline thin-film PV is presented, including evaluation of flexible CIS cells. In addition, progress on flexible CdTe cells is presented. Finally, examples of lightweight, flexible arrays and their potential cost and weight impact is discussed.

  19. Polycrystalline thin-film technology: Recent progress in photovoltaics

    SciTech Connect

    Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

    1991-12-01

    Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe{sub 2}), cadmium telluride (CdTe), and thin-film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin-film CuInSe{sub 2}, has made some rapid advances in terms of high efficiency and long-term reliability. For CuInSe{sub 2} power modules, a world record has been reported on a 0.4-m{sup 2} module with an aperture-area efficiency of 10.4% and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe{sub 2} modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 cm{sup 2}. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10%; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

  20. DOE/SERI polycrystalline thin-film photovoltaic research

    SciTech Connect

    Hermann, A; Zweibel, K; Mitchell, R

    1984-05-01

    This paper presents recent results, status, and future prospects for the US Department of Energy's (DOE's) Polycrystalline Thin Film Photovoltaic program, managed by the Solar Energy Research Institute (SERI). The devices being studied most intensively are heterojunctions based on CuInSe/sub 2/ and on CdTe. Both materials have attained over 10% efficiency in polycrystalline form. The main emphasis is on CuInSe/sub 2/, for which Boeing has reported an 11%-efficient device (AMl ELH simulation). Important work is being done on studies of the composition/electronic properties of CuInSe/sub 2/ and its response to post-deposition annealing. In the CdTe research, ohmic, stable back-contacting and control of p-type doping are being investigated. New efforts to study polycrystalline two-junction stacked cells are underway with two-terminal cells (at IEC) and with four-terminal cells (at SMU). This preliminary work is expected to be expanded, with emphasis on CdTe and other top-cell (high-bandgap) materials. These efforts introduce a number of new research areas (e.g., transparent ohmic contacts to p-CdTe and sub-bandgap light-losses in polycrystalline materials). The aim of the program is to produce stable, high-efficiency (15%), thin-film cells that can be deposited inexpensively by techniques that are scalable to large areas.

  1. Progress and issues in polycrystalline thin-film PV technologies

    SciTech Connect

    Zweibel, K.; Ullal, H.S.; Roedern, B. von

    1996-05-01

    Substantial progress has occurred in polycrystalline thin-film photovoltaic technologies in the past 18 months. However, the transition to first-time manufacturing is still under way, and technical problems continue. This paper focuses on the promise and the problems of the copper indium diselenide and cadmium telluride technologies, with an emphasis on continued R&D needs for the near-term transition to manufacturing and for next-generation improvements. In addition, it highlights the joint R&D efforts being performed in the U.S. Department of Energy/National Renewable Energy Laboratory Thin-Film Photovoltaic Partnership Program.

  2. Fabrication of polycrystalline thin films by pulsed laser processing

    DOEpatents

    Mitlitsky, Fred; Truher, Joel B.; Kaschmitter, James L.; Colella, Nicholas J.

    1998-02-03

    A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

  3. Fabrication of polycrystalline thin films by pulsed laser processing

    DOEpatents

    Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

    1998-02-03

    A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

  4. Controlled nanostructuration of polycrystalline tungsten thin films

    SciTech Connect

    Girault, B.; Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O.; Sauvage, T.

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  5. Advances in polycrystalline thin-film photovoltaics for space applications

    SciTech Connect

    Lanning, B.R.; Armstrong, J.H.; Misra, M.S.

    1994-09-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 eV and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not `reactor-specific` and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a `substrate configuration` by physical vapor deposition techniques and CdTe cells/modules are fabricated in a `superstrate configuration` by wet chemical methods.

  6. Advances in polycrystalline thin-film photovoltaics for space applications

    NASA Technical Reports Server (NTRS)

    Lanning, Bruce R.; Armstrong, Joseph H.; Misra, Mohan S.

    1994-01-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical

  7. Advances in polycrystalline thin-film photovoltaics for space applications

    NASA Astrophysics Data System (ADS)

    Lanning, Bruce R.; Armstrong, Joseph H.; Misra, Mohan S.

    1994-09-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical

  8. Anisotropic thermal conductivity of thin polycrystalline oxide samples

    SciTech Connect

    Tiwari, A.; Boussois, K.; Nait-Ali, B.; Smith, D. S.; Blanchart, P.

    2013-11-15

    This paper reports about the development of a modified laser-flash technique and relation to measure the in-plane thermal diffusivity of thin polycrystalline oxide samples. Thermal conductivity is then calculated with the product of diffusivity, specific heat and density. Design and operating features for evaluating in-plane thermal conductivities are described. The technique is advantageous as thin samples are not glued together to measure in-plane thermal conductivities like earlier methods reported in literature. The approach was employed to study anisotropic thermal conductivity in alumina sheet, textured kaolin ceramics and montmorillonite. Since it is rare to find in-plane thermal conductivity values for such anisotropic thin samples in literature, this technique offers a useful variant to existing techniques.

  9. Photoluminescence from stain-etched polycrystalline Si thin films

    NASA Astrophysics Data System (ADS)

    Steckl, A. J.; Xu, J.; Mogul, H. C.

    1993-04-01

    Visible room-temperature photoluminescence has been observed from stain-etched polycrystalline Si thin films. Poly-Si thin films deposited on oxidized Si and quartz substrates became porous (PoSi) after stain-etching in a 1:3:5 solution of HF:HNO3:H2O. Under UV excitation, the stain-etched doped and undoped poly-Si films produce uniform orange-red (about 650 nm) luminescence very similar to that obtained from stain-etched crystalline Si substrates. Stained amorphous thin films did not exhibit photoluminescence. Luminescent patterns with sub-micrometer (about 0.6 micron) dimensions have been obtained for the first time from PoSi produced from poly-Si films.

  10. Polycrystalline silicon on glass for thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Green, Martin A.

    2009-07-01

    Although most solar cell modules to date have been based on crystalline or polycrystalline wafers, these may be too material intensive and hence always too expensive to reach the very low costs required for large-scale impact of photovoltaics on the energy scene. Polycrystalline silicon on glass (CSG) solar cell technology was developed to address this difficulty as well as perceived fundamental difficulties with other thin-film technologies. The aim was to combine the advantages of standard silicon wafer-based technology, namely ruggedness, durability, good electronic properties and environmental soundness with the advantages of thin-films, specifically low material use, large monolithic construction and a desirable glass superstrate configuration. The challenge has been to match the different preferred processing temperatures of silicon and glass and to obtain strong solar absorption in notoriously weakly-absorbing silicon of only 1-2 micron thickness. A rugged, durable silicon thin-film technology has been developed with amongst the lowest manufacturing cost of these contenders and confirmed efficiency for small pilot line modules already in the 10-11% energy conversion efficiency range, on the path to 12-13%.

  11. Polycrystalline Thin Film Photovoltaics: Research, Development, and Technologies: Preprint

    SciTech Connect

    Ullal, H. S.; Zweibel, K.; von Roedern, B.

    2002-05-01

    II-VI binary thin-film solar cells based on cadmium telluride (CdTe) and I-III-VI ternary thin-film solar cells based on copper indium diselenide (CIS) and related materials have been the subject of intense research and development in the past few years. Substantial progress has been made thus far in the area of materials research, device fabrication, and technology development, and numerous applications based on CdTe and CIS have been deployed worldwide. World record efficiency of 16.5% has been achieved by NREL scientists for a thin-film CdTe solar cell using a modified device structure. Also, NREL scientists achieved world-record efficiency of 21.1% for a thin-film CIGS solar cell under a 14X concentration and AM1.5 global spectrum. When measured under a AM1.5 direct spectrum, the efficiency increases to 21.5%. Pathways for achieving 25% efficiency for tandem polycrystalline thin-film solar cells are elucidated. R&D issues relating to CdTe and CIS are reported in this paper, such as contact stability and accelerated life testing in CdTe, and effects of moisture ingress in thin-film CIS devices. Substantial technology development is currently under way, with various groups reporting power module efficiencies in the range of 7.0% to 12.1% and power output of 40.0 to 92.5 W. A number of lessons learned during the scale-up activities of the technology development for fabrication of thin-film power modules are discussed. The major global players actively involved in the technology development and commercialization efforts using both rigid and flexible power modules are highlighted.

  12. Polycrystalline silicon thin films crystallized by green laser

    NASA Astrophysics Data System (ADS)

    Yuan, Zhijun; Lou, Qihong; Zhou, Jun; Liu, Xia; Wang, Wei; Su, Zhouping

    2008-12-01

    A top hat beam of frequency-doubled Nd: YAG laser is obtained from our beam shaping optical system. With this beam, amorphous silicon thin films deposited on glass by plasma-enhanced chemical vapor deposition (PECVD) are successfully crystallized. The surface morphology of the laser-crystallized materials is studied by atomic force microscopy (AFM). Pronounced increase in surface roughness after the laser treatment could be observed from the Microscope Photos. Raman spectra of the Si films are measured to confirm the phase transition from amorphous to polycrystalline and to investigate the silicon structural properties. Crystalline fraction evaluated from the Raman spectra are found to increase almost linearly with the laser fluence. There exists the optimized laser fluence to produce the best crystallization in the range of 400 ~1000mJ/cm2.

  13. Magnetoelastic properties of thin polycrystalline Terfenol-D films

    NASA Astrophysics Data System (ADS)

    Bailly, Cecile; Su, Quanmin; Wuttig, Manfred R.

    1998-07-01

    In this paper we report on polycrystalline thin films sputter- deposited at elevated temperatures. The grain size of the films was changed by controlling the film thickness. A series of 4 samples with thicknesses ranging from 0.1 μm to 1 μm was studied. The magnetic properties of the films were characterized by vibrating sample magnetometer measurement technique. The magneto-mechanical properties of the films were determined by dynamic magneto-mechanical measurements. The coercivity of the films was found to increase linearly with decreasing film thickness. A sharp transition occurred for film thickness below 0.3 μm and the coercivity decreased to 100 Oe as the film thickness reached 0.1 μm. The saturation magnetization of the films was calculated from the magneto-mechanical measurements. The values were found to agree with those determined from the VSM measurements for all the samples but the thinnest film for which VSM and magneto-mechanical values diffracted by one order of magnitude. It is suggested that the low coercivity of the 0.1 μm film can be associated with the onset of superparamagnetism in the nanograins of the film.

  14. High-Efficiency Polycrystalline Thin Film Tandem Solar Cells.

    PubMed

    Kranz, Lukas; Abate, Antonio; Feurer, Thomas; Fu, Fan; Avancini, Enrico; Löckinger, Johannes; Reinhard, Patrick; Zakeeruddin, Shaik M; Grätzel, Michael; Buecheler, Stephan; Tiwari, Ayodhya N

    2015-07-16

    A promising way to enhance the efficiency of CIGS solar cells is by combining them with perovskite solar cells in tandem devices. However, so far, such tandem devices had limited efficiency due to challenges in developing NIR-transparent perovskite top cells, which allow photons with energy below the perovskite band gap to be transmitted to the bottom cell. Here, a process for the fabrication of NIR-transparent perovskite solar cells is presented, which enables power conversion efficiencies up to 12.1% combined with an average sub-band gap transmission of 71% for photons with wavelength between 800 and 1000 nm. The combination of a NIR-transparent perovskite top cell with a CIGS bottom cell enabled a tandem device with 19.5% efficiency, which is the highest reported efficiency for a polycrystalline thin film tandem solar cell. Future developments of perovskite/CIGS tandem devices are discussed and prospects for devices with efficiency toward and above 27% are given.

  15. Fundamentals of polycrystalline thin film materials and devices

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. . Inst. of Energy Conversion)

    1991-01-01

    This report presents the results of a one-year research program on polycrystalline thin-film solar cells. The research was conducted to better understand the limitations and potential of solar cells using CuInSe{sub 2} and CdTe by systematically investigating the fundamental relationships linking material processing, material properties, and device behavior. By selenizing Cu and In layers, we fabricated device-quality CuInSe{sub 2} thin films and demonstrated a CuInSe{sub 2} solar cell with 7% efficiency. We added Ga, to increase the band gap of CuInSe{sub 2} devices to increase the open-circuit voltage to 0.55 V. We fabricated and analyzed Cu(InGa)Se{sub 2}/CuInSe{sub 2} devices to demonstrate the potential for combining the benefits of higher V{sub oc} while retaining the current-generating capacity of CuInSe{sub 2}. We fabricated an innovative superstrate device design with more than 5% efficiency, as well as a bifacial spectral-response technique for determining the electron diffusion length and optical absorption coefficient of CuInSe{sub 2} in an operational cell. The diffusion length was found to be greater than 1 {mu}m. We qualitatively modeled the effect of reducing heat treatments in hydrogen and oxidizing treatments in air on the I-V behavior of CuInSe{sub 2} devices. We also investigated post-deposition heat treatments and chemical processing and used them to fabricate a 9.6%-efficient CdTe/CdS solar cell using physical vapor deposition.

  16. Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

  17. Charge carrier transport in polycrystalline organic thin film based field effect transistors

    NASA Astrophysics Data System (ADS)

    Rani, Varsha; Sharma, Akanksha; Ghosh, Subhasis

    2016-05-01

    The charge carrier transport mechanism in polycrystalline thin film based organic field effect transistors (OFETs) has been explained using two competing models, multiple trapping and releases (MTR) model and percolation model. It has been shown that MTR model is most suitable for explaining charge carrier transport in grainy polycrystalline organic thin films. The energetic distribution of traps determined independently using Mayer-Neldel rule (MNR) is in excellent agreement with the values obtained by MTR model for copper phthalocyanine and pentacene based OFETs.

  18. Multiscale modelling framework for the fracture of thin brittle polycrystalline films: application to polysilicon

    NASA Astrophysics Data System (ADS)

    Mulay, Shantanu S.; Becker, Gauthier; Vayrette, Renaud; Raskin, Jean-Pierre; Pardoen, Thomas; Galceran, Montserrat; Godet, Stéphane; Noels, Ludovic

    2015-01-01

    Micro-electro-mechanical systems (MEMS) made of polycrystalline silicon are widely used in several engineering fields. The fracture properties of polycrystalline silicon directly affect their reliability. The effect of the orientation of grains on the fracture behaviour of polycrystalline silicon is investigated out of the several factors. This is achieved, firstly, by identifying the statistical variation of the fracture strength and critical strain energy release rate, at the nanoscopic scale, over a thin freestanding polycrystalline silicon film having mesoscopic scale dimensions. The fracture stress and strain at the mesoscopic level are found to be closely matching with uniaxial tension experimental results. Secondly, the polycrystalline silicon film is considered at the continuum MEMS scale, and its fracture behaviour is studied by incorporating the nanoscopic scale effect of grain orientation. The entire modelling and simulation of the thin film is achieved by combining the discontinuous Galerkin method and extrinsic cohesive law describing the fracture process.

  19. Research on polycrystalline thin-film photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Hermann, A. M.; Fabick, L.

    1983-05-01

    Recent results from the United States Department of Energy Polycrystalline Thin-Film Photovoltaic Device Program are presented. The program which is managed by the solar Energy Research Institute encompasses materials and device research on a variety of compound semiconductors with emphasis on II-VI compounds and II-VI ternary analogs. This paper covers preparation (emphasizing thin-film deposition) and characterization of semiconducting materials such as Cu 2- xS, Cu 2- xSe, CdTe and CuInSe 2. Photovoltaic device characteristics of these absorbers with heterojunction partners such as CdS are discussed. Excitement in the program has been generated by recent progress in the (Cd, Zn/S)/CuInSe 2 device area. An AM1 efficiency of 9.93% for a 5 μm thick 1 cm 2 cell has been verified at SERI. Unencapsulated (Cd, Zn)S/CuInSe 2 cells have been subjected to more than 6000 h of accelerated stability testing with no measureable degradation in photovoltaic performance. Other program highlights include fabrication of a hybrid CdS/Cu 2S device (evaporated CdS, sputtered Cu 2S) with a 7.2% AM1 efficiency, and a 3.9% AM1 efficiency all-sputtered CdS/Cu 2S cell. Preliminary data are presented on the achievement of intrinsically stable high-efficiency (>9%) wet-processed CdS/Cu 2S cells. Progress in the less mature research areas is outlined. A 5.3% (AM1) CVD Au/n-CdTe Schottky barrier cell is described, and AM1 cell efficiencies exceeding 4% for vacuum evaporated CdS/Cu 2Se and chemically sprayed CdS/CdTe cells are reported. Future research emphasis is discussed. One of the important technical issues which is being addressed in an increase in the open-circuit voltage of (Cd,Zn)S/CuInSe 2 cells. Technical issues being addressed in other areas include film growth and doping studies in CdTe and improvement in the doping profile of CdS/Cu 2Se junctions.

  20. Amorphous silicon/polycrystalline thin film solar cells

    SciTech Connect

    Ullal, H.S.

    1991-03-13

    An improved photovoltaic solar cell is described including a p-type amorphous silicon layer, intrinsic amorphous silicon, and an n-type polycrystalline semiconductor such as cadmium sulfide, cadmium zinc sulfide, zinc selenide, gallium phosphide, and gallium nitride. The polycrystalline semiconductor has an energy bandgap greater than that of the amorphous silicon. The solar cell can be provided as a single-junction device or a multijunction device.

  1. Polycrystalline VO2 thin films via femtosecond laser processing of amorphous VO x

    NASA Astrophysics Data System (ADS)

    Charipar, N. A.; Kim, H.; Breckenfeld, E.; Charipar, K. M.; Mathews, S. A.; Piqué, A.

    2016-05-01

    Femtosecond laser processing of pulsed laser-deposited amorphous vanadium oxide thin films was investigated. Polycrystalline VO2 thin films were achieved by femtosecond laser processing in air at room temperature. The electrical transport properties, crystal structure, surface morphology, and optical properties were characterized. The laser-processed films exhibited a metal-insulator phase transition characteristic of VO2, thus presenting a pathway for the growth of crystalline vanadium dioxide films on low-temperature substrates.

  2. Ferroelectric domain switching of individual nanoscale grains in polycrystalline lead zirconate titanate thin films

    NASA Astrophysics Data System (ADS)

    Jing, Yuanyuan

    2011-12-01

    This thesis will focus on the switching behavior of nanoscale ferroelectric domains in polycrystalline thin films. Ferroelectrics are a class of dielectric materials that demonstrate spontaneous polarizations under zero applied electric field. A region with the same polarization is called a ferroelectric domain. One important attribute of ferroelectrics is the domain switching from one thermodynamically stable state to another by application of an external electric field. Ferroelectric domain switching has been intensively investigated in epitaxial thin films. However, little is known about the domain switching in polycrystalline thin films. The main reason is that each grain is differently orientated and each is in a unique local stress and electric field determined by neighboring grains. To understand and deterministically control the nanoscale domain switching in polycrystalline thin films, it's critical to experimentally identify the effect of local microstructure (grain orientation and grain boundary misorientation) on the individual grain switching behavior. In this thesis, the effect of local microstructure on domain switching has been quantitatively analyzed in a 100 nm thick polycrystalline PbZr 0.2Ti0.8O3 thin film. The ferroelectric domains are characterized by Piezoresponse Force Microscopy (PFM), with their switching behavior analyzed by Polarization Difference Maps (PDMs, an analytical technique developed in this work). The local microstructure is determined by Electron Back Scattering Diffraction (EBSD). The results are discussed in chapter 3 to 6. Chapter 3 introduces the PDMs technique that enables the rapid identification of 0o, 90o switching and 180o switching in polycrystalline thin films. By assigning different colors to different types of switching, the full nature of polarization switching can be visualized simultaneously for large number of domains or grains in one map. In chapter 4, an external electric field reversal experiment has been

  3. Influence of lattice distortion on phase transition properties of polycrystalline VO2 thin film

    NASA Astrophysics Data System (ADS)

    Lin, Tiegui; Wang, Langping; Wang, Xiaofeng; Zhang, Yufen; Yu, Yonghao

    2016-08-01

    In this work, high power impulse magnetron sputtering was used to control the lattice distortion in polycrystalline VO2 thin film. SEM images revealed that all the VO2 thin films had crystallite sizes of below 20 nm, and similar configurations. UV-vis-near IR transmittance spectra measured at different temperatures showed that most of the as-deposited films had a typical metal-insulator transition. Four-point probe resistivity results showed that the transition temperature of the films varied from 54.5 to 32 °C. The X-ray diffraction (XRD) patterns of the as-deposited films revealed that most were polycrystalline monoclinic VO2. The XRD results also confirmed that the lattice distortions in the as-deposited films were different, and the transition temperature decreased with the difference between the interplanar spacing of the as-deposited thin film and standard rutile VO2. Furthermore, a room temperature rutile VO2 thin film was successfully synthesized when this difference was small enough. Additionally, XRD patterns measured at varied temperatures revealed that the phase transition process of the polycrystalline VO2 thin film was a coordinative deformation between grains with different orientations. The main structural change during the phase transition was a gradual shift in interplanar spacing with temperature.

  4. Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

    SciTech Connect

    Do, Woori; Jin, Won-Beom; Choi, Jungwan; Bae, Seung-Muk; Kim, Hyoung-June; Kim, Byung-Kuk; Park, Seungho; Hwang, Jin-Ha

    2014-10-15

    Highlights: • Intensified visible light irradiation was generated via a high-powered Xe arc lamp. • The disordered Si atomic structure absorbs the intensified visible light. • The rapid heating activates electrically boron-implanted Si thin films. • Flash lamp heating is applicable to low temperature polycrystalline Si thin films. - Abstract: Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in the electrical activation of boron-implanted Si thin films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films.

  5. Superconductor—Insulator Transitions in Pure Polycrystalline Nb Thin Films

    NASA Astrophysics Data System (ADS)

    Couedo, F.; Crauste, O.; Bergé, L.; Dolgorouky, Y.; Marrache-Kikuchi, C.; Dumoulin, L.

    2012-12-01

    We report on a study of the transport properties of Nb thin films. By varying the thickness of the films from 263 Å to 25 Å, we observed a depression of the superconductivity. Magnetic field was also applied up to 6 T, inducing the disappearance of the superconductivity and the onset of an insulating behavior. The results were compared to those we have already obtained on a highly disordered system, a-NbxSi1-x, to understand whether the same mechanisms for the disappearance of the superconductivity could be at play in pure metallic thin films and in highly disordered systems.

  6. Properties of boron-doped thin films of polycrystalline silicon

    SciTech Connect

    Merabet, Souad

    2013-12-16

    The properties of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped heavily in situ boron-doped with concentration level of around 2×10{sup 20}cm{sup −3} has been studied. Their properties are analyzed using electrical and structural characterization means by four points probe resistivity measurements and X-ray diffraction spectra. The thermal-oxidation process are performed on sub-micron layers of 200nm/c-Si and 200nm/SiO{sub 2} deposited at temperatures T{sub d} ranged between 520°C and 605°C and thermally-oxidized in dry oxygen ambient at 945°C. Compared to the as-grown resistivity with silicon wafers is known to be in the following sequence <ρ{sub 200nm/c−Si}> < <ρ{sub 200nm/SiO2}> and <ρ{sub 520}> < <ρ{sub 605}>. The measure X-ray spectra is shown, that the Bragg peaks are marked according to the crystal orientation in the film deposited on bare substrates (poly/c-Si), for the second series of films deposited on bare oxidized substrates (poly/SiO{sub 2}) are clearly different.

  7. Polycrystalline thin film materials and devices. Final subcontract report, 16 January 1990--15 January 1993

    SciTech Connect

    Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.; Yokimcus, T.A.

    1993-08-01

    This report describes results and conclusions of the final phase (III) of a three-year research program on polycrystalline thin-film heterojunction solar cells. The research consisted of the investigation of the relationships between processing, materials properties, and device performance. This relationship was quantified by device modeling and analysis. The analysis of thin-film polycrystalline heterojunction solar cells explains how minority-carrier recombination at the metallurgical interface and at grain boundaries can be greatly reduced by the proper doping of the window and absorber layers. Additional analysis and measurements show that the present solar cells are limited by the magnitude of the diode current, which appears to be caused by recombination in the space charge region. Developing an efficient commercial-scale process for fabricating large-area polycrystalline, thin-film solar cells from a research process requires a detailed understanding of the individual steps in making the solar cell, and their relationship to device performance and reliability. The complexities involved in characterizing a process are demonstrated with results from our research program on CuInSe{sub 2}, and CdTe processes.

  8. Polycrystalline silicon thin-film solar cell prepared by the solid phase crystallization (SPC) method

    SciTech Connect

    Baba, T.; Matsuyama, T.; Sawada, T.; Takahama, T.; Wakisaka, K.; Tsuda, S.; Nakano, S.

    1994-12-31

    A solid phase crystallization (SPC) method was applied to the fabrication of thin-film polycrystalline silicon (poly-Si) for solar cells for the first time. Among crystalline silicon solar cells crystallized at a low temperature of less than 600 C, the world`s highest conversion efficiency of 8.5% was achieved in a solar cell using thin-film poly-Si with only 10 {micro}m thickness prepared by the SPC method. This solar cell showed high photosensitivity in the long-wavelength region of more than 800 nm and also exhibited no light-induced degradation after light exposure.

  9. Polycrystalline Mg{sub 2}Si thin films: A theoretical investigation of their electronic transport properties

    SciTech Connect

    Balout, H.; Boulet, P.; Record, M.-C.

    2015-05-15

    The electronic structures and thermoelectric properties of a polycrystalline Mg{sub 2}Si thin film have been investigated by first-principle density-functional theory (DFT) and Boltzmann transport theory calculations within the constant-relaxation time approximation. The polycrystalline thin film has been simulated by assembling three types of slabs each having the orientation (001), (110) or (111) with a thickness of about 18 Å. The effect of applying the relaxation procedure to the thin film induces disorder in the structure that has been ascertained by calculating radial distribution functions. For the calculations of the thermoelectric properties, the energy gap has been fixed at the experimental value of 0.74 eV. The thermoelectric properties, namely the Seebeck coefficient, the electrical conductivity and the power factor, have been determined at three temperatures of 350 K, 600 K and 900 K with respect to both the energy levels and the p-type and n-type doping levels. The best Seebeck coefficient is obtained at 350 K: the S{sub yy} component of the tensor amounts to about ±1000 μV K{sup −1}, depending on the type of charge carriers. However, the electrical conductivity is much too small which results in low values of the figure of merit ZT. Structure–property relationship correlations based on directional radial distribution functions allow us to tentatively draw some explanations regarding the anisotropy of the electrical conductivity. Finally, the low ZT values obtained for the polycrystalline Mg{sub 2}Si thin film are paralleled with those recently reported in the literature for bulk chalcogenide glasses. - Graphical abstract: Structure of the polycrystalline thin film of Mg{sub 2}Si. - Author-Highlights: • Polycrystalline Mg{sub 2}Si film has been modelled by DFT approach. • Thermoelectric properties have been evaluated by semi-classical Boltzmann theory. • The structure was found to be slightly disordered after relaxation. • The highest

  10. Progress in polycrystalline thin-film photovoltaic-device research

    NASA Astrophysics Data System (ADS)

    Hermann, A. M.; Fabick, L.; Zweibel, K.; Hardy, R. W.

    1982-09-01

    Recent results from the United States Department of Energy (DOE) Thin Film Photovoltaic Device Program are presented. The program encompasses materials and device research on highly absorbing compound semiconductors including CuInSe2, CdTe, Cu/sub 2-x/Se, Zn3P2, ZnSiAs2, and Cu2S. Excitement in the program has been generated by recent progress in the (Cd,Zn)S/CuInSe2 device area where an efficiency of 10.6% on a 5 micrometers thick device has been reported. Other highlights include deposition of a hybrid CdS/Cu2S device (evaporated CdS, sputtered Cu2S) with a 7.1% AMI efficiency, and of a 3.94% AMI efficiency all sputtered CdS/Cu2S cell. AMI efficiencies exceeding 5% are reported for CdTe Schottky barrier and heterojunction devices, and for a CdS/Cu/sub 2-x/Se heterojunction. AMI efficiencies exceeding 4% are reported for Mg/Zn3P3 Schottky barrier cells. Future research emphasis is outlined.

  11. Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

    SciTech Connect

    Antesberger, T.; Wassner, T. A.; Jaeger, C.; Algasinger, M.; Kashani, M.; Scholz, M.; Matich, S.; Stutzmann, M.

    2013-05-27

    Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2 Multiplication-Sign 10{sup 17} cm{sup -3} and 3 Multiplication-Sign 10{sup 20} cm{sup -3} for phosphorus and 4 Multiplication-Sign 10{sup 18} cm{sup -3} to 3 Multiplication-Sign 10{sup 19} cm{sup -3} for boron-doped layers, with carrier mobilities up to 90 cm{sup 2}/V s.

  12. Polycrystalline Mg2Si thin films: A theoretical investigation of their electronic transport properties

    NASA Astrophysics Data System (ADS)

    Balout, H.; Boulet, P.; Record, M.-C.

    2015-05-01

    The electronic structures and thermoelectric properties of a polycrystalline Mg2Si thin film have been investigated by first-principle density-functional theory (DFT) and Boltzmann transport theory calculations within the constant-relaxation time approximation. The polycrystalline thin film has been simulated by assembling three types of slabs each having the orientation (001), (110) or (111) with a thickness of about 18 Å. The effect of applying the relaxation procedure to the thin film induces disorder in the structure that has been ascertained by calculating radial distribution functions. For the calculations of the thermoelectric properties, the energy gap has been fixed at the experimental value of 0.74 eV. The thermoelectric properties, namely the Seebeck coefficient, the electrical conductivity and the power factor, have been determined at three temperatures of 350 K, 600 K and 900 K with respect to both the energy levels and the p-type and n-type doping levels. The best Seebeck coefficient is obtained at 350 K: the Syy component of the tensor amounts to about ±1000 μV K-1, depending on the type of charge carriers. However, the electrical conductivity is much too small which results in low values of the figure of merit ZT. Structure-property relationship correlations based on directional radial distribution functions allow us to tentatively draw some explanations regarding the anisotropy of the electrical conductivity. Finally, the low ZT values obtained for the polycrystalline Mg2Si thin film are paralleled with those recently reported in the literature for bulk chalcogenide glasses.

  13. Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1991--15 January 1992

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  14. Optical and electrical properties of polycrystalline and amorphous Al-Ti thin films

    NASA Astrophysics Data System (ADS)

    Canulescu, S.; Borca, C. N.; Rechendorff, K.; Davidsdóttir, S.; Pagh Almtoft, K.; Nielsen, L. P.; Schou, J.

    2016-04-01

    The structural, optical, and transport properties of sputter-deposited Al-Ti thin films have been investigated as a function of Ti alloying with a concentration ranging from 2% to 46%. The optical reflectivity of Al-Ti films at visible and near-infrared wavelengths decreases with increasing Ti content. X-ray absorption fine structure measurements reveal that the atomic ordering around Ti atoms increases with increasing Ti content up to 20% and then decreases as a result of a transition from a polycrystalline to amorphous structure. The transport properties of the Al-Ti films are influenced by electron scattering at the grain boundaries in the case of polycrystalline films and static defects, such as anti-site effects and vacancies in the case of the amorphous alloys. The combination of Ti having a real refractive index (n) comparable with the extinction coefficient (k) and Al with n much smaller than k allows us to explore the parameter space for the free-electron behavior in transition metal-Al alloys. The free electron model, applied for the polycrystalline Al-Ti films with Ti content up to 20%, leads to an optical reflectance at near infrared wavelengths that scales linearly with the square root of the electrical resistivity.

  15. Impact of universal mobility law on polycrystalline organic thin-film transistors

    NASA Astrophysics Data System (ADS)

    Raja, Munira; Donaghy, David; Myers, Robert; Eccleston, Bill

    2012-10-01

    We have developed novel analytical models for polycrystalline organic thin-film transistor (OTFT) by employing new concepts on the charge carrier injection to polysilicon thin-films. The models, also incorporate the effect of contact resistance associated with the poor ohmic nature of the contacts. The drain current equations of the OTFT, both in the quasi-diffusion and quasi-drift regimes, predict temperature dependencies on essential material and device parameters. Interestingly, under the drift regime, the polycrystalline OTFT model reveals similar power dependencies on the applied voltages, to those of purely disordered model developed by utilizing the universal mobility law (UML). Such similarities are not thought to be coincidental since the effect of gate voltage on surface potential is influenced by the Fermi level pinning in the grain boundary. Nonetheless, the best fits on the data of 6,13-bis(tri-isopropylsilylethynyl) OTFTs are attained with the proposed polycrystalline rather than the disordered model, particularly at low gate voltages where the diffusive component is dominant. Moreover, in order to understand the effect of grain boundaries, we devise a relationship for the dependency of the effective mobility on carrier concentration, assuming a crystalline region to be in direct contact with a disordered region. Interestingly, we find a similar dependency as the UML in purely disordered materials, which further signifies the conduction to be limited by the grain boundaries. Subsequently, an analytical model for the variation of the effective mobility with gate voltage is established. Such models are vital in assisting the development of more accurate designs of the novel organic circuits.

  16. MIS and PN junction solar cells on thin-film polycrystalline silicon

    SciTech Connect

    Ariotedjo, A.; Emery, K.; Cheek, G.; Pierce, P.; Surek, T.

    1981-05-01

    The Photovoltaic Advanced Silicon (PVAS) Branch at the Solar Energy Research Institute (SERI) has initiated a comparative study to assess the potential of MIS-type solar cells for low-cost terrestrial photovoltaic systems in terms of performance, stability, and cost-effectiveness. Several types of MIS and SIS solar cells are included in the matrix study currently underway. This approach compares the results of MIS and p/n junction solar cells on essentially identical thin-film polycrystalline silicon materials. All cell measurements and characterizations are performed using uniform testing procedures developed in the Photovoltaic Measurements and Evaluation (PV M and E) Laboratory at SERI. Some preliminary data on the different cell structures on thin-film epitaxial silicon on metallurgical-grade substrates are presented here.

  17. Compressive intrinsic stress originates in the grain boundaries of dense refractory polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Magnfält, D.; Fillon, A.; Boyd, R. D.; Helmersson, U.; Sarakinos, K.; Abadias, G.

    2016-02-01

    Intrinsic stresses in vapor deposited thin films have been a topic of considerable scientific and technological interest owing to their importance for functionality and performance of thin film devices. The origin of compressive stresses typically observed during deposition of polycrystalline metal films at conditions that result in high atomic mobility has been under debate in the literature in the course of the past decades. In this study, we contribute towards resolving this debate by investigating the grain size dependence of compressive stress magnitude in dense polycrystalline Mo films grown by magnetron sputtering. Although Mo is a refractory metal and hence exhibits an intrinsically low mobility, low energy ion bombardment is used during growth to enhance atomic mobility and densify the grain boundaries. Concurrently, the lateral grain size is controlled by using appropriate seed layers on which Mo films are grown epitaxially. The combination of in situ stress monitoring with ex situ microstructural characterization reveals a strong, seemingly linear, increase of the compressive stress magnitude on the inverse grain size and thus provides evidence that compressive stress is generated in the grain boundaries of the film. These results are consistent with models suggesting that compressive stresses in metallic films deposited at high homologous temperatures are generated by atom incorporation into and densification of grain boundaries. However, the underlying mechanisms for grain boundary densification might be different from those in the present study where atomic mobility is intrinsically low.

  18. Nucleation, growth, and control of ferroelectric-ferroelastic domains in thin polycrystalline films

    NASA Astrophysics Data System (ADS)

    Ivry, Yachin; Scott, James F.; Salje, Ekhard K. H.; Durkan, Colm

    2012-11-01

    The unique response of ferroic materials to external excitations facilitates them for diverse technologies, such as nonvolatile memory devices. The primary driving force behind this response is encoded in domain switching. In bulk ferroics, domains switch in a two-step process: nucleation and growth. For ferroelectrics, this can be explained by the Kolmogorov-Avrami-Ishibashi (KAI) model. Nevertheless, it is unclear whether domains remain correlated in finite geometries, as required by the KAI model. Moreover, although ferroelastic domains exist in many ferroelectrics, experimental limitations have hindered the study of their switching mechanisms. This uncertainty limits our understanding of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from reaching their full technological potential. Here we used piezoresponse force microscopy to study the switching mechanisms of ferroelectric-ferroelastic domains in thin polycrystalline Pb0.7Zr0.3TiO3 films at the nanometer scale. We have found that switched biferroic domains can nucleate at multiple sites with a coherence length that may span several grains, and that nucleators merge to form mesoscale domains, in a manner consistent with that expected from the KAI model.

  19. Innovative deposition techniques for the fabrication of polycrystalline thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Armstrong, J. H.; Lanning, B. R.; Misra, M. S.

    1992-12-01

    A key issue for photovoltaics (PV), both in terrestrial and future space applications, is producibility, particularly for applications utilizing a large volume of PV. Among the concerns for fabrication of polycrystalline thin-film photovoltaics, such as copper-indium-diselenide (CIS) and cadmium-telluride (CdTe), are production volume, which translates directly related to cost, and minimization of waste. Both the rotating cylindrical magnetron (C-MagTM) and pulsed electrodeposition have tremendous potential for the fabrication of polycrystalline thin-film photovoltaics due to scaleability, efficient utilization of source materials and inherently higher deposition rates. In the case of sputtering, the unique geometry of the C-MagTM facilitates innovative cosputtering and reactive sputtering that could lead to greater throughput, reduced health and safety risks, and ultimately lower fabrication cost. For pulsed electrodeposition, the films appear to be more tightly adherent and deposited at an enhanced rate when compared to conventional DC electrodeposition. This paper addresses Martin Marietta's investigation into innovative sputtering techniques and pulsed electrodeposition with a near-term goal of 930 cm2 (1 ft2) monolithically-integrated CIS and CdTe submodules.

  20. Innovative deposition techniques for the fabrication of polycrystalline thin-film photovoltaics

    SciTech Connect

    Armstrong, J.H.; Lanning, B.R.; Misra, M.S. )

    1992-12-01

    A key issue for photovoltaics (PV), both in terrestrial and future space applications, is [ital producibility], particularly for applications utilizing a large volume of PV. Among the concerns for fabrication of polycrystalline thin-film photovoltaics, such as copper-indium-diselenide (CIS) and cadmium-telluride (CdTe), are production volume, which translates directly related to cost, and minimization of waste. Both the rotating cylindrical magnetron (C-Mag[sup TM]) and pulsed electrodeposition have tremendous potential for the fabrication of polycrystalline thin-film photovoltaics due to scaleability, efficient utilization of source materials and inherently higher deposition rates. In the case of sputtering, the unique geometry of the C-Mag[sup TM] facilitates innovative cosputtering and reactive sputtering that could lead to greater throughput, reduced health and safety risks, and ultimately lower fabrication cost. For pulsed electrodeposition, the films appear to be more tightly adherent and deposited at an enhanced rate when compared to conventional DC electrodeposition. This paper addresses Martin Marietta's investigation into innovative sputtering techniques and pulsed electrodeposition with a near-term goal of 930 cm[sup 2] (1 ft[sup 2]) monolithically-integrated CIS and CdTe submodules.

  1. Progress towards high efficiency polycrystalline thin-film GaAs AMOS solar cells

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.; Ernest, F. P.; Stirn, R. J.

    1978-01-01

    Results of Ge film recrystallization using focused laser beams and GaAs film growth on such layers in the making of high efficiency thin-film AMOS solar cells are discussed. Since a conversion efficiency of 14% was obtained for an AMOS cell fabricated on sliced bulk polycrystalline GaAs, high efficiency cells are being developed by chemically vapor-depositing GaAs films on previously recrystallized evaporated Ge films to minimize the grain boundary (GB) effects. Schottky barrier solar cells made on sliced polycrystalline GaAs wafers were studied to investigate the effects of grain boundaries on cell properties and the potential efficiency of GaAs thin-film cells. Ge film recrystallization and the chemical vapor deposition (CVD) of the 2 to 3 micron thick GaAs films are described. AMOS solar cells with 100 Angstrom thick Ag metallization were made on CVD GaAs/recrystallized Ge/W substrates with an energy conversion efficiency of 8%.

  2. Suppressing light reflection from polycrystalline silicon thin films through surface texturing and silver nanostructures

    SciTech Connect

    Akhter, Perveen; Huang, Mengbing Kadakia, Nirag; Spratt, William; Malladi, Girish; Bakhru, Hassarum

    2014-09-21

    This work demonstrates a novel method combining ion implantation and silver nanostructures for suppressing light reflection from polycrystalline silicon thin films. Samples were implanted with 20-keV hydrogen ions to a dose of 10¹⁷/cm², and some of them received an additional argon ion implant to a dose of 5×10¹⁵ /cm² at an energy between 30 and 300 keV. Compared to the case with a single H implant, the processing involved both H and Ar implants and post-implantation annealing has created a much higher degree of surface texturing, leading to a more dramatic reduction of light reflection from polycrystalline Si films over a broadband range between 300 and 1200 nm, e.g., optical reflection from the air/Si interface in the AM1.5 sunlight condition decreasing from ~30% with an untextured surface to below 5% for a highly textured surface after post-implantation annealing at 1000°C. Formation of Ag nanostructures on these ion beam processed surfaces further reduces light reflection, and surface texturing is expected to have the benefit of diminishing light absorption losses within large-size (>100 nm) Ag nanoparticles, yielding an increased light trapping efficiency within Si as opposed to the case with Ag nanostructures on a smooth surface. A discussion of the effects of surface textures and Ag nanoparticles on light trapping within Si thin films is also presented with the aid of computer simulations.

  3. Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    1997-03-01

    Polycrystalline-thin-film thermophotovoltaic (TPV) cells have excellent potential for reducing the cost of TPV generators so as to address the hitherto inaccessible and highly competitive markets such as self-powered gas-fired residential warm air furnaces and energy-efficient electric cars, etc. Recent progress in polycrystalline-thin-film solar cells have made it possible to satisfy the diffusion length and intrinsic junction rectification criteria for TPV cells operating at high fluences. Continuous ranges of direct bandgaps of the ternary and pseudoternary compounds such as Hg1-xCdxTe, Pb1-xCdxTe, Hg1-xZnxTe, and Pb1-xZnxS cover the region of interest of 0.50-0.75 eV for efficient TPV conversion. Other ternary and pseudoternary compounds which show direct bandgaps in most of or all of the 0.50-0.75 eV range are Pb1-xZnxTe, Sn1-xCd2xTe2, Pb1-xCdxSe, Pb1-xZnxSe, and Pb1-xCdxS. Hg1-xCdxTe (with x~0.21) has been studied extensively for infrared detectors. PbTe and Pb1-xSnxTe have also been studied for infrared detectors. Not much work has been carried out on Hg1-xZnxTe thin films. Hg1-xCdxTe and Pb1-xCdxTe alloys cover a wide range of cut-off wavelengths from the far infrared to the near visible. Acceptors and donors are introduced in these materials by excess non-metal (Te) and excess metal (Hg and Pb) respectively. Extrinsic acceptor impurities are Cu, Au, and As while and In and Al are donor impurities. Hg1-xCdxTe thin films have been deposited by isothermal vapor-phase epitaxy (VPE), liquid phase epitaxy (LPE), hot-wall metalorganic chemical vapor deposition (MOCVD), electrodeposition, sputtering, molecular beam epitaxy (MBE), laser-assisted evaporation, and vacuum evaporation with or without hot-wall enclosure. The challenge in the preparation of Hg1-xCdxTe is to provide excess mercury incidence rate, to optimize the deposition parameters for enhanced mercury incorporation, and to achieve the requisite stoichiometry, grain size, and doping. MBE and MOCVD

  4. Thin film polycrystalline silicon: Promise and problems in displays and solar cells

    SciTech Connect

    Fonash, S.J.

    1995-08-01

    Thin film polycrystalline Si (poly-Si) with its carrier mobilities, potentially good stability, low intragrain defect density, compatibility with silicon processing, and ease of doping activation is an interesting material for {open_quotes}macroelectronics{close_quotes} applications such as TFTs for displays and solar cells. The poly-Si films needed for these applications can be ultra-thin-in the 500{Angstrom} to 1000{Angstrom} thickness range for flat panel display TFTs and in the 4{mu}m to 10{mu}m thickness range for solar cells. Because the films needed for these microelectronics applications can be so thin, an effective approach to producing the films is that of crystallizing a-Si precursor material. Unlike cast materials, poly-Si films made this way can be produced using low temperature processing. Unlike deposited poly-Si films, these crystallized poly-Si films can have grain widths that are much larger than the film thickness and almost atomically smooth surfaces. This thin film poly-Si crystallized from a-Si precursor films, and its promise and problems for TFTs and solar cells, is the focus of this discussion.

  5. Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuits for Active Matrix Organic Light Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Fan, Ching-Lin; Lin, Yu-Sheng; Liu, Yan-Wei

    A new pixel design and driving method for active matrix organic light emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage programming method are proposed and verified using the SPICE simulator. We had employed an appropriate TFT model in SPICE simulation to demonstrate the performance of the pixel circuit. The OLED anode voltage variation error rates are below 0.35% under driving TFT threshold voltage deviation (Δ Vth =± 0.33V). The OLED current non-uniformity caused by the OLED threshold voltage degradation (Δ VTO =+0.33V) is significantly reduced (below 6%). The simulation results show that the pixel design can improve the display image non-uniformity by compensating for the threshold voltage deviation in the driving TFT and the OLED threshold voltage degradation at the same time.

  6. Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby

    DOEpatents

    Wu, Xuanzhi; Sheldon, Peter

    2000-01-01

    A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

  7. Broadening of optical transitions in polycrystalline CdS and CdTe thin films

    SciTech Connect

    Li Jian; Chen Jie; Collins, R. W.

    2010-11-01

    The dielectric functions {epsilon} of polycrystalline CdS and CdTe thin films sputter deposited onto Si wafers were measured from 0.75 to 6.5 eV by in situ spectroscopic ellipsometry. Differences in {epsilon} due to processing variations are well understood using an excited carrier scattering model. For each sample, a carrier mean free path {lambda} is defined that is found to be inversely proportional to the broadening of each of the band structure critical points (CPs) deduced from {epsilon}. The rate at which broadening occurs with {lambda}{sup -1} is different for each CP, enabling a carrier group speed {upsilon}{sub g} to be identified for the CP. With the database for {upsilon}{sub g}, {epsilon} can be analyzed to evaluate the quality of materials used in CdS/CdTe photovoltaic heterojunctions.

  8. A simple and continuous polycrystalline silicon thin-film transistor model for SPICE implementation

    NASA Astrophysics Data System (ADS)

    Pappas, I.; Hatzopoulos, A. T.; Tassis, D. H.; Arpatzanis, N.; Siskos, S.; Dimitriadis, C. A.; Kamarinos, G.

    2006-09-01

    A simple current-voltage model for polycrystalline silicon thin-film transistors (polysilicon TFTs) is proposed, including the sixth-order polynomial function coefficients fitted to the effective mobility versus gate voltage data, the channel length modulation, and impact ionization effects. The model possesses continuity of current in the transfer characteristics from weak to strong inversion and in the output characteristics throughout the linear and saturation regions of operation. The model parameters are used as input parameters in AIM-SPICE circuit simulator for device modeling. The model has been applied in a number of long and short channel TFTs, and the statistical distributions of the model parameters have been derived which are useful for checking the functionality of TFTs circuits with AIM-SPICE.

  9. Activation of ion-implanted polycrystalline silicon thin films prepared on glass substrates

    SciTech Connect

    So, Byoung-Soo; Bae, Seung-Muk; You, Yil-Hwan; Kim, Young-Hwan; Hwang, Jin-Ha

    2012-10-15

    Phosphorous-implanted polycrystalline Si thin films were subjected to thermal annealing between 300 °C and 650 °C. The thermal activation was monitored electrically and structurally using Hall measurements, Raman spectroscopy, UV–visible spectrophotometry, and transmission electron microscopy. Charge transport information was correlated to the corresponding structural evolution in thermal activation. Phosphorous-implanted activation is divided into short-range ordering at low temperatures and long-range ordering at high temperatures, with the boundary between low and high temperatures set at 425 °C. Short-range ordering allows for significant increase in electronic concentration through substitution of P for Si. Higher temperatures are attributed to long-range ordering, thereby increasing electronic mobility.

  10. Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

    SciTech Connect

    Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  11. Ferroelectric properties of highly a-oriented polycrystalline Bi2WO6 thin films grown on glass substrates

    NASA Astrophysics Data System (ADS)

    Ahn, Yoonho; Son, Jong Yeog

    2016-10-01

    Polycrystalline Bi2WO6 (BWO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition (PLD). In this study, we comparatively investigate the influence of oxygen partial pressure on structural and ferroelectric properties of the BWO films. In comparison with the BWO films deposited at oxygen partial pressure of 100 and 300 mTorr, the BWO film deposited at 300 mTorr exhibits a highly a-oriented crystalline structure. The highly a-oriented polycrystalline BWO thin film shows good ferroelectric properties with a remnant polarization of about 21.5 μ C /cm2 . The piezoresponse force microscope study reveals that the highly a-oriented BWO thin film possesses larger ferroelectric domain patterns due to smaller domain wall energy.

  12. Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films

    SciTech Connect

    Kumar, Avishek E-mail: dalapatig@imre.a-star.edu.sg; Law, Felix; Widenborg, Per I.; Dalapati, Goutam K. E-mail: dalapatig@imre.a-star.edu.sg; Subramanian, Gomathy S.; Tan, Hui R.; Aberle, Armin G.

    2014-11-01

    n-type polycrystalline silicon (poly-Si) films with very large grains, exceeding 30 μm in width, and with high Hall mobility of about 71.5 cm{sup 2}/V s are successfully prepared by the solid-phase crystallization technique on glass through the control of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The effect of this gas flow ratio on the electronic and structural quality of the n-type poly-Si thin film is systematically investigated using Hall effect measurements, Raman microscopy, and electron backscatter diffraction (EBSD), respectively. The poly-Si grains are found to be randomly oriented, whereby the average area weighted grain size is found to increase from 4.3 to 18 μm with increase of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The stress in the poly-Si thin films is found to increase above 900 MPa when the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio is increased from 0.025 to 0.45. Finally, high-resolution transmission electron microscopy, high angle annular dark field-scanning tunneling microscopy, and EBSD are used to identify the defects and dislocations caused by the stress in the fabricated poly-Si films.

  13. Electrical and thermal properties of polycrystalline Si thin films with phononic crystal nanopatterning for thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Nomura, Masahiro; Kage, Yuta; Müller, David; Moser, Dominik; Paul, Oliver

    2015-06-01

    Electrical and thermal properties of polycrystalline Si thin films with two-dimensional phononic patterning were investigated at room temperature. Electrical and thermal conductivities for the phononic crystal nanostructures with a variety of radii of the circular holes were measured to systematically investigate the impact of the nanopatterning. The concept of phonon-glass and electron-crystal is valid in the investigated electron and phonon transport systems with the neck size of 80 nm. The thermal conductivity is more sensitive than the electrical conductivity to the nanopatterning due to the longer mean free path of the thermal phonons than that of the charge carriers. The values of the figure of merit ZT were 0.065 and 0.035, and the enhancement factors were 2 and 4 for the p-doped and n-doped phononic crystals compared to the unpatterned thin films, respectively, when the characteristic size of the phononic crystal nanostructure is below 100 nm. The greater enhancement factor of ZT for the n-doped sample seems to result from the strong phonon scattering by heavy phosphorus atoms at the grain boundaries.

  14. Electrical and thermal properties of polycrystalline Si thin films with phononic crystal nanopatterning for thermoelectric applications

    SciTech Connect

    Nomura, Masahiro; Kage, Yuta; Müller, David; Moser, Dominik; Paul, Oliver

    2015-06-01

    Electrical and thermal properties of polycrystalline Si thin films with two-dimensional phononic patterning were investigated at room temperature. Electrical and thermal conductivities for the phononic crystal nanostructures with a variety of radii of the circular holes were measured to systematically investigate the impact of the nanopatterning. The concept of phonon-glass and electron-crystal is valid in the investigated electron and phonon transport systems with the neck size of 80 nm. The thermal conductivity is more sensitive than the electrical conductivity to the nanopatterning due to the longer mean free path of the thermal phonons than that of the charge carriers. The values of the figure of merit ZT were 0.065 and 0.035, and the enhancement factors were 2 and 4 for the p-doped and n-doped phononic crystals compared to the unpatterned thin films, respectively, when the characteristic size of the phononic crystal nanostructure is below 100 nm. The greater enhancement factor of ZT for the n-doped sample seems to result from the strong phonon scattering by heavy phosphorus atoms at the grain boundaries.

  15. Progress with polycrystalline silicon thin-film solar cells on glass at UNSW

    NASA Astrophysics Data System (ADS)

    Aberle, Armin G.

    2006-01-01

    Polycrystalline Si (pc-Si) thin-film solar cells on glass have long been considered a very promising approach for lowering the cost of photovoltaic (PV) solar electricity. In recent years there have been dramatic advances with this PV technology, and the first commercial modules (CSG Solar) are expected to hit the marketplace in 2006. The CSG modules are based on solid-phase crystallisation of plasma-enhanced chemical vapor deposition (PECVD) -deposited amorphous Si. Independent research in the author's group at the University of New South Wales (UNSW) during recent years has led to the development of three alternative pc-Si thin-film solar cells on glass—EVA, ALICIA and ALICE. Cell thickness is generally about 2 μm. The first two cells are made by vacuum evaporation, whereas ALICE cells can be made by either vacuum evaporation or PECVD. Evaporation has the advantage of being a fast and inexpensive Si deposition method. A crucial component of ALICIA and ALICE cells is a seed layer made on glass by metal-induced crystallisation of amorphous silicon (a-Si). The absorber layer of these cells is made by either ion-assisted Si epitaxy (ALICIA) or solid-phase epitaxy of a-Si (ALICE). This paper reports on the status of these three new thin-film PV technologies. All three solar cells seem to be capable of voltages of over 500 mV and, owing to their potentially inexpensive and scalable fabrication process, have significant industrial appeal.

  16. Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Titova, Lyubov V.; Cocker, Tyler L.; Xu, Sijia; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Hegmann, Frank A.

    2016-10-01

    We have used time-resolved terahertz spectroscopy to study microscopic photoconductivity and ultrafast photoexcited carrier dynamics in thin, pure, non-hydrogenated silicon films grown by molecular beam epitaxy on quartz substrates at temperatures ranging from 335 °C to 572 °C. By controlling the growth temperature, thin silicon films ranging from completely amorphous to polycrystalline with minimal amorphous phase can be achieved. Film morphology, in turn, determines its photoconductive properties: in the amorphous phase, carriers are trapped in bandtail states on sub-picosecond time scales, while the carriers excited in crystalline grains remain free for tens of picoseconds. We also find that in polycrystalline silicon the photoexcited carrier mobility is carrier-density-dependent, with higher carrier densities mitigating the effects of grain boundaries on inter-grain transport. In a film grown at the highest temperature of 572 °C, the morphology changes along the growth direction from polycrystalline with needles of single crystals in the bulk of the film to small crystallites interspersed with amorphous silicon at the top of the film. Depth profiling using different excitation wavelengths shows corresponding differences in the photoconductivity: the photoexcited carrier lifetime and mobility are higher in the first 100-150 nm from the substrate, suggesting that thinner, low-temperature grown polycrystalline silicon films are preferable for photovoltaic applications.

  17. Investigation of Melting and Solidification of Thin Polycrystalline Silicon Films via Mixed-Phase Solidification

    NASA Astrophysics Data System (ADS)

    Wang, Ying

    Melting and solidification constitute the fundamental pathways through which a thin-film material is processed in many beam-induced crystallization methods. In this thesis, we investigate and leverage a specific beam-induced, melt-mediated crystallization approach, referred to as Mixed-Phase Solidification (MPS), to examine and scrutinize how a polycrystalline Si film undergoes the process of melting and solidification. On the one hand, we develop a more general understanding as to how such transformations can transpire in polycrystalline films. On the other hand, by investigating how the microstructure evolution is affected by the thermodynamic properties of the system, we experimentally reveal, by examining the solidified microstructure, fundamental information about such properties (i.e., the anisotropy in interfacial free energy). Specifically, the thesis consists of two primary parts: (1) conducting a thorough and extensive investigation of the MPS process itself, which includes a detailed characterization and analysis of the microstructure evolution of the film as it undergoes MPS cycles, along with additional development and refinement of a previously proposed thermodynamic model to describe the MPS melting-and-solidification process; and (2) performing MPS-based experiments that were systematically designed to reveal more information on the anisotropic nature of Si-SiO2 interfacial energy (i.e., sigma Si-SiO2). MPS is a recently developed radiative-beam-based crystallization technique capable of generating Si films with a combination of several sought-after microstructural characteristics. It was conceived, developed, and characterized within our laser crystallization laboratory at Columbia University. A preliminary thermodynamic model was also previously proposed to describe the overall melting and solidification behavior of a polycrystalline Si film during an MPS cycle, wherein the grain-orientation-dependent solid-liquid interface velocity is identified

  18. Recovery Act : Near-Single-Crystalline Photovoltaic Thin Films on Polycrystalline, Flexible Substrates

    SciTech Connect

    Venkat Selvamanickam; Alex Freundlich

    2010-11-29

    III-V photovoltaics have exhibited efficiencies above 40%, but have found only a limited use because of the high cost of single crystal substrates. At the other end of the spectrum, polycrystalline and amorphous thin film solar cells offer the advantage of low-cost fabrication, but have not yielded high efficiencies. Our program is based on single-crystalline-like thin film photovoltaics on polycrystalline substrates using biaxially-textured templates made by Ion Beam-Assisted Deposition (IBAD). MgO templates made by IBAD on flexible metal substrate have been successfully used for epitaxial growth of germanium films. In spite of a 4.5% lattice mismatch, heteroepitaxial growth of Ge was achieved on CeO2 that was grown on IBAD MgO template. Room temperature optical bandgap of the Ge films was identified at 0.67 eV indicating minimal residual strain. Refraction index and extinction coefficient values of the Ge films were found to match well with that measured from a reference Ge single crystal. GaAs has been successfully grown epitaxially on Ge on metal substrate by molecular beam epitaxy. RHEED patterns indicate self annihilation of antiphase boundaries and the growth of a single domain GaAs. The GaAs is found to exhibit strong photoluminescence signal and, an existence of a relatively narrow (FWHM~20 meV) band-edge excitons measured in this film indicates a good optoelectronic quality of deposited GaAs. While excellent epitaxial growth has been achieved in GaAs on flexible metal substrates, the defect density of the films as measured by High Resolution X-ray Diffraction and etch pit experiments showed a high value of 5 * 10^8 per cm^2. Cross sectional transmission electron microscopy of the multilayer architecture showed concentration of threading dislocations near the germanium-ceria interface. The defect density was found decrease as the Ge films were made thicker. The defects appear to originate from the MgO layer presumably because of large lattice mismatches

  19. 1 Tbit/in.2 Very-High-Density Recording in Mass-Productive Polycrystalline Ferroelectric Thin Film Media

    NASA Astrophysics Data System (ADS)

    Fujimoto, Kenjiro; Kawano, Takahiro; Onoe, Atsushi; Tamura, Masahiro; Umeda, Masaru; Toda, Masayuki

    2009-07-01

    We demonstrate very-high-density ferroelectric recording experiments of 1 Tbit/in.2 in polycrystalline Pb(Zr,Ti)O3 (PZT) thin film for the first time. A high-quality polycrystalline PZT thin film was successfully deposited on a silicon substrate with a SrRuO3 (SRO) electrode by metal-organic chemical vapor deposition (MOCVD). The roughness of the PZT film was reduced to less than 1 nm by chemical mechanical polishing (CMP). The PZT film has very high controllability for domain inversion. Our fabrication process also enables high productivity. Therefore, our PZT film has potential to be a mass-productive ferroelectric recording medium for high-density storage systems.

  20. Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

    SciTech Connect

    Dhere, N.G.

    1997-03-01

    Polycrystalline-thin-film thermophotovoltaic (TPV) cells have excellent potential for reducing the cost of TPV generators so as to address the hitherto inaccessible and highly competitive markets such as self-powered gas-fired residential warm air furnaces and energy-efficient electric cars, etc. Recent progress in polycrystalline-thin-film solar cells have made it possible to satisfy the diffusion length and intrinsic junction rectification criteria for TPV cells operating at high fluences. Continuous ranges of direct bandgaps of the ternary and pseudoternary compounds such as Hg{sub 1{minus}x}Cd{sub x}Te, Pb{sub 1{minus}x}Cd{sub x}Te, Hg{sub 1{minus}x}Zn{sub x}Te, and Pb{sub 1{minus}x}Zn{sub x}S cover the region of interest of 0.50{endash}0.75 eV for efficient TPV conversion. Other ternary and pseudoternary compounds which show direct bandgaps in most of or all of the 0.50{endash}0.75 eV range are Pb{sub 1{minus}x}Zn{sub x}Te, Sn{sub 1{minus}x}Cd{sub 2x}Te{sub 2}, Pb{sub 1{minus}x}Cd{sub x}Se, Pb{sub 1{minus}x}Zn{sub x}Se, and Pb{sub 1{minus}x}Cd{sub x}S. Hg{sub 1{minus}x}Cd{sub x}Te (with x{approx}0.21) has been studied extensively for infrared detectors. PbTe and Pb{sub 1{minus}x}Sn{sub x}Te have also been studied for infrared detectors. Not much work has been carried out on Hg{sub 1{minus}x}Zn{sub x}Te thin films. Hg{sub 1{minus}x}Cd{sub x}Te and Pb{sub 1{minus}x}Cd{sub x}Te alloys cover a wide range of cut-off wavelengths from the far infrared to the near visible. Acceptors and donors are introduced in these materials by excess non-metal (Te) and excess metal (Hg and Pb) respectively. Extrinsic acceptor impurities are Cu, Au, and As while and In and Al are donor impurities. Hg{sub 1{minus}x}Cd{sub x}Te thin films have been deposited by isothermal vapor-phase epitaxy (VPE), liquid phase epitaxy (LPE), hot-wall metalorganic chemical vapor deposition (MOCVD), electrodeposition, sputtering, molecular beam epitaxy (MBE), laser-assisted evaporation, and vacuum

  1. Fatigue characteristics of polycrystalline silicon thin-film membrane and its dependence on humidity

    NASA Astrophysics Data System (ADS)

    Tanemura, Tomoki; Yamashita, Shuichi; Wado, Hiroyuki; Takeuchi, Yukihiro; Tsuchiya, Toshiyuki; Tabata, Osamu

    2013-03-01

    This paper describes fatigue characteristics of a polycrystalline silicon thin-film membrane under different humidity evaluated by out-of-plane resonant vibration. The membrane, without the surface of sidewalls by patterning of photolithography and etching process, was applied to evaluate fatigue characteristics precisely against the changes in the surrounding humidity owing to narrower deviation in the fatigue lifetime. The membrane has 16 mm square-shaped multilayered films consisting of a 250 or 500 nm thick polysilicon film on silicon dioxide and silicon nitride underlying layers. A circular weight of 12 mm in diameter was placed at the center of the membrane to control the resonant frequency. Stress on the polysilicon film was generated by deforming the membrane oscillating the weight in the out-of-plane direction. The polysilicon film was fractured by fatigue damage accumulation under cyclic stress. The lifetime of the polysilicon membrane extended with lower relative humidity, especially at 5%RH. The results of the fatigue tests were well formulated with Weibull's statistics and Paris’ law. The dependence of fatigue characteristics on humidity has been quantitatively revealed for the first time. The crack growth rate indicated by the fatigue index decreased with the reduction in humidity, whereas the deviation of strength represented by the Weibull modulus was nearly constant against humidity.

  2. Local impedance imaging of boron-doped polycrystalline diamond thin films

    SciTech Connect

    Zieliński, A.; Ryl, J.; Burczyk, L.; Darowicki, K.

    2014-09-29

    Local impedance imaging (LII) was used to visualise surficial deviations of AC impedances in polycrystalline boron-doped diamond (BDD). The BDD thin film electrodes were deposited onto the highly doped silicon substrates via microwave plasma-enhanced CVD. The studied boron dopant concentrations, controlled by the [B]/[C] ratio in plasma, ranged from 1 × 10{sup 16} to 2 × 10{sup 21} atoms cm{sup −3}. The BDD films displayed microcrystalline structure, while the average size of crystallites decreased from 1 to 0.7 μm with increasing [B]/[C] ratios. The application of LII enabled a direct and high-resolution investigation of local distribution of impedance characteristics within the individual grains of BDD. Such an approach resulted in greater understanding of the microstructural control of properties at the grain level. We propose that the obtained surficial variation of impedance is correlated to the areas of high conductance which have been observed at the grain boundaries by using LII. We also postulate that the origin of high conductivity is due to either preferential boron accumulation, the presence of defects, or sp{sup 2} regions in the intragrain regions. The impedance modulus recorded by LII was in full agreement with the bulk impedance measurements. Both variables showed a decreasing trend with increasing [B]/[C] ratios, which is consistent with higher boron incorporation into BDD film.

  3. A thin-film polycrystalline photoelectrochemical cell with 8% solar conversion efficiency

    NASA Astrophysics Data System (ADS)

    Hodes, G.

    1980-05-01

    A thin-film polycrystalline CdSe(0.65)Te(0.35)/polysulfide-based photoelectrochemical solar cell with an energy conversion efficiency of up to 8% is presented. Cell electrodes were prepared by painting a slurry of sintered CdSe(0.65)Te(0.35) powder onto a Ti substrate and then annealing in an inert atmosphere and etching by various means. Solar efficiencies of the electrodes immersed in an aqueous electrolyte 1 M in KOH, Na2S and S with a counter electrode of sulfide brass gauze of up to 5% were obtained following a HCl:HNO3 etch, up to 5.5% following etching in dilute aqueous CrO3 and up to 8.0% following photoetching and K2CrO4 treatment. The spectral response of the anode in polysulfide solution exhibits a short-wavelength cutoff due to electrolyte absorption, a flat plateau region, and a fairly sharp long-wavelength cut-off indicating an effective band gap of about 1.45 eV, similar to that of CdTe. Output stability has been found to decrease with increasing output current, remaining stable for more than 21 h at a current of 20 mA/sq cm.

  4. Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures.

    PubMed

    Antonuk, L E; Koniczek, M; McDonald, J; El-Mohri, Y; Zhao, Q; Behravan, M

    2008-01-01

    An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring how the 1/f, shot and thermal noise components of poly-Si TFTs, determined from current noise power spectral density measurements, as well as through calculation, can be used to assist in the development of imagers incorporating pixel amplification circuits based on such transistors. PMID:20862269

  5. Buffer layers for deposition of superconducting YBaCuO thin film on polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Beetz, Charles P.; Cui, G. J.; Lincoln, B. A.; Kirlin, Peter S.

    1992-09-01

    In an attempt to combine the properties of high temperature superconductors with the high thermal conductivity and low specific heat of diamond, we have explored the deposition of in- situ YBa(subscript 2)Cu(subscript 3)O(subscript 7-(delta) ) (YBCO) superconducting films on polycrystalline diamond thin films. We demonstrate for the first time superconducting YBCO films on diamond employing multiple layer buffer layer systems. Three different composite buffer layer systems were explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si(subscript 3)N(subscript 4)/YSZ/YBCO, and (3) Diamond/SiO(subscript 2)/YSZ/YBCO. Adherent thin Zr films were deposited by dc sputtering on the diamond films at 450 to 820 degree(s)C. The yttria stabilized zirconia (YSZ) was deposited by reactive RF sputtering at 680 to 750 degree(s)C. The Si(subscript 3)N(subscript 4) and SiO(subscript 2) were also deposited by on-axis RF sputtering at 400 to 700 degree(s)C. YBCO films were grown on the buffer layers by off-axis RF sputtering at substrate temperatures between 690 degree(s)C and 750 degree(s)C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric far IR detectors and paves the way for the use of HTSC as a high frequency interconnect metallization on thick diamond film based multichip modules.

  6. Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

    NASA Astrophysics Data System (ADS)

    Bhopal, Muhammad Fahad; Lee, Doo Won; Lee, Soo Hong

    2016-09-01

    Thin-film polycrystalline silicon ( pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm-1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

  7. Polycrystalline silicon thin-film solar cells with plasmonic-enhanced light-trapping.

    PubMed

    Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

    2012-01-01

    One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach. The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles. To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm(2), which can be increased up to 17-18 mA/cm(2) (~25% higher) after application of a simple diffuse back reflector made of a white paint. To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing

  8. Characterization of polycrystalline VO2 thin film with low phase transition temperature fabricated by high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Tiegui; Wang, Langping; Wang, Xiaofeng; Zhang, Yufen

    2016-04-01

    VO2 is a unique material that undergoes a reversible phase transformation around 68∘C. Currently, applications of VO2 on smart windows are limited by its high transition temperature. In order to reduce the temperature, VO2 thin film was fabricated on quartz glass substrate by high power impulse magnetron sputtering with a modulated pulsed power. The phase transition temperature has been reduced to as low as 32∘C. In addition, the VO2 film possesses a typical metal-insulator transition. X-ray diffraction and selected area electron diffraction patterns reveal that an obvious lattice distortion has been formed in the as-deposited polycrystalline VO2 thin film. X-ray photoelectron spectroscopy proves that oxygen vacancies have been formed in the as-deposited thin film, which will induce a lattice distortion in the VO2 thin film.

  9. Optical absorption characteristics of polycrystalline AgGaSe2 thin films

    NASA Astrophysics Data System (ADS)

    Bhuiyan, M. R. A.; Firoz Hasan, S. M.

    2006-12-01

    Silver gallium di-selenide (AgGaSe2) composite thin films have been formed onto ultrasonically and chemically cleaned glass substrates by in situ thermal annealing of the stack of successively evaporated individual elemental layers in vacuum. The structural properties of the films were ascertained by the x-ray diffraction method. The diffractogram indicated that these films were polycrystalline in nature having tetragonal structure with lattice parameters, a ap 6.00 Å and c ap 10.92 Å and average grain dimension 40 nm. The optical properties and atomic compositions of the films have been determined by UV-VIS-NIR spectrophotometry (photon wavelength ranging between 300 and 2500 nm) and energy dispersive analysis of x-ray, respectively. The typical optical absorption characteristic of the films has been critically analysed. The optical absorption coefficients vary from 103 to 105 cm-1 in the measured wavelength range of photons. The films have more than one type of fundamental electronic transitions. Direct allowed and direct forbidden transitions vary from 1.628 to 1.748 eV and 2.077 to 2.193 eV, respectively, depending on the composition of the films. The former transitions are found to have a general tendency to be symmetric around non-molecularity ΔX = 0, defined by ΔX = [(Ag/Ga)] - 1, while the latter shows no such dependence. Stoichiometric or slightly silver-deficient films show electron transition energies closer to the single crystal value. Spin-orbit splitting of the valence band becomes minimum at perfect stoichiometry.

  10. Influence of thickness on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Dhaka, M. S.

    2016-02-01

    This paper presents the influence of thickness on physical properties of polycrystalline CdTe thin films. The thin films of thickness 450 nm, 650 nm and 850 nm were deposited employing thermal vacuum evaporation technique on glass and indium tin oxide (ITO) coated glass substrates. The physical properties of these as-grown thin films were investigated employing the X-ray diffraction (XRD), source meter, UV-Vis spectrophotometer, scanning electron microscopy (SEM) coupled with energy dispersive spectroscopy (EDS). The structural analysis reveals that the films have zinc-blende cubic structure and polycrystalline in nature with preferred orientation (111). The structural parameters like lattice constant, interplanar spacing, grain size, strain, dislocation density and number of crystallites per unit area are calculated. The average grain size and optical band gap are found in the range 15.16-21.22 nm and 1.44-1.63 eV respectively and observed to decrease with thickness. The current-voltage characteristics show that the electrical conductivity is observed to decrease with thickness. The surface morphology shows that films are free from crystal defects like pin holes and voids as well as homogeneous and uniform. The EDS patterns show the presence of cadmium and tellurium elements in the as grown films. The experimental results reveal that the film thickness plays significant role on the physical properties of as-grown CdTe thin films and higher thickness may be used as absorber layer to solar cells applications.

  11. Thin film polycrystalline Si solar cells studied in transient regime by optical pump-terahertz probe spectroscopy

    NASA Astrophysics Data System (ADS)

    Pikna, P.; Skoromets, V.; Becker, C.; Fejfar, A.; Kužel, P.

    2015-12-01

    We used time-resolved terahertz spectroscopy to study ultrafast photoconductivity of polycrystalline thin-film silicon solar cells. We selected a series of samples, which exhibited variable conversion efficiencies due to hydrogen plasma passivation under various technological conditions. The decay of the transient terahertz conductivity shows two components: the fast one is related to the charge recombination at interfaces, while the slow nanosecond one is attributed to the trapping of photocarriers by defects localized at grain boundaries or at dislocations in the polycrystalline p- layer of the structure. We observed a clear correlation between the open-circuit voltage and the nanosecond-scale decay time of the transient terahertz conductivity of the solar cells. Thus, the terahertz spectroscopy appears to be a useful contactless tool for inspecting the local photoconductivity of solar cells including, in particular, various nanostructured schemes.

  12. Investigation of Melting and Solidification of Thin Polycrystalline Silicon Films via Mixed-Phase Solidification

    NASA Astrophysics Data System (ADS)

    Wang, Ying

    Melting and solidification constitute the fundamental pathways through which a thin-film material is processed in many beam-induced crystallization methods. In this thesis, we investigate and leverage a specific beam-induced, melt-mediated crystallization approach, referred to as Mixed-Phase Solidification (MPS), to examine and scrutinize how a polycrystalline Si film undergoes the process of melting and solidification. On the one hand, we develop a more general understanding as to how such transformations can transpire in polycrystalline films. On the other hand, by investigating how the microstructure evolution is affected by the thermodynamic properties of the system, we experimentally reveal, by examining the solidified microstructure, fundamental information about such properties (i.e., the anisotropy in interfacial free energy). Specifically, the thesis consists of two primary parts: (1) conducting a thorough and extensive investigation of the MPS process itself, which includes a detailed characterization and analysis of the microstructure evolution of the film as it undergoes MPS cycles, along with additional development and refinement of a previously proposed thermodynamic model to describe the MPS melting-and-solidification process; and (2) performing MPS-based experiments that were systematically designed to reveal more information on the anisotropic nature of Si-SiO2 interfacial energy (i.e., sigma Si-SiO2). MPS is a recently developed radiative-beam-based crystallization technique capable of generating Si films with a combination of several sought-after microstructural characteristics. It was conceived, developed, and characterized within our laser crystallization laboratory at Columbia University. A preliminary thermodynamic model was also previously proposed to describe the overall melting and solidification behavior of a polycrystalline Si film during an MPS cycle, wherein the grain-orientation-dependent solid-liquid interface velocity is identified

  13. Electronic transitions in the bandgap of copper indium gallium diselenide polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Heath, Jennifer Theresa

    The electronic properties of polycrystalline copper indium gallium diselenide thin films have been investigated, with emphasis on understanding the distribution and origin of electronic states in the bandgap. The samples studied were working photovoltaic devices with the structure ZnO/CdS/CuIn1-xGa xSe2/Mo, and photovoltaic efficiencies ranging from 8 to 16%. The CdS layer and the p-type CuIn1-xGa xSe2 film create the n+- p junction at the heart of these devices. The samples were investigated using four techniques based on the electrical response of the junction: admittance spectroscopy, drive level capacitance profiling, transient photocapacitance spectroscopy, and transient photocurrent spectroscopy. From these measurements the free carrier densities, defect densities within the bandgap, spatial uniformity, and minority carrier mobilities have been deduced. The sub-bandgap response from the CuIn1-xGaxSe2 film was dominated by two defects. One exhibited a thermal transition to the valence band with an activation energy ranging between 0.1 and 0.3 eV and thermal emission prefactors obeying the Meyer-Neldel rule. The second was detected as an optical transition 0.8 eV from the valence band edge. Neither of these defects exhibited densities that varied systematically with gallium content, implying that they are not directly connected with the group III elements in these alloys. The defect densities also do not clearly correlate with the photovoltaic device performance; however, the position of the 0.8 eV defect lies nearer to mid-gap in the higher gallium, and hence higher band gap, material. This implies that it may be a more important recombination center in these devices and may be partially responsible for the reduced photovoltaic efficiencies observed when Ga/(In + Ga) > 0.4. An additional defect response was observed near mid-gap in films grown by processes known to produce lower quality devices. The influence of defects located at grain boundaries was also

  14. Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1990--15 January 1991

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.

    1991-11-01

    Results and conclusion of Phase I of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe{sub 2} and CdTe solar cells. The kinetics of the formation of CuInSe{sub 2} by selenization with hydrogen selenide was investigated and a CuInSe{sub 2}/CdS solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe{sub 2} films and a cell efficiency of 7%. Detailed investigations of the open circuit voltage of CuInSe{sub 2} solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe{sub 2} thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe{sub 2} is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10% can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm{sup 2} are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.

  15. Ambient condition laser writing of graphene structures on polycrystalline SiC thin film deposited on Si wafer

    SciTech Connect

    Yue, Naili; Zhang, Yong; Tsu, Raphael

    2013-02-18

    We report laser induced local conversion of polycrystalline SiC thin-films grown on Si wafers into multi-layer graphene, a process compatible with the Si based microelectronic technologies. The conversion can be achieved using a 532 nm CW laser with as little as 10 mW power, yielding {approx}1 {mu}m graphene discs without any mask. The conversion conditions are found to vary with the crystallinity of the film. More interestingly, the internal structure of the graphene disc, probed by Raman imaging, can be tuned with varying the film and illumination parameters, resembling either the fundamental or doughnut mode of a laser beam.

  16. On the effect of processing parameters in the chemical-vapor deposition of YBa2Cu3O(7-delta) thin films on polycrystalline silver

    NASA Astrophysics Data System (ADS)

    Chen, L.; Piazza, T. W.; Schmidt, B. E.; Kelsey, J. E.; Kaloyeros, A. E.; Hazelton, D. W.; Walker, M. S.; Luo, L.; Dye, R. C.; Maggiore, C. J.

    1993-06-01

    Results are presented of experimental studies which examined the effect of recrystallization of polycrystalline silver on the growth of YBa2Cu3O(7-delta) superconducting thin films and investigated optimum processing conditions for high-quality superconducting films. The samples were characterized using XRD, Rutherford backscattering, SEM, dynamic impedance, and four-point resistivity probe. The results were used to formulate a model for the underlying mechanics of film growth on polycrystalline silver substrates.

  17. Enhanced electrical properties at boundaries including twin boundaries of polycrystalline CdTe thin-film solar cells.

    PubMed

    Li, H; Liu, X X; Lin, Y S; Yang, B; Du, Z M

    2015-05-01

    The effect of grain boundaries (GBs), in particular twin boundaries (TBs), on CdTe polycrystalline thin films is studied by conductive atomic force microscopy (C-AFM), electron-beam-induced current (EBIC), scanning Kelvin probe microscopy (SKPM), electron backscatter diffraction (EBSD), and scanning transmission electron microscopy (STEM). Four types of CdTe grains with various densities of {111} Σ3 twin boundaries (TBs) are found in Cl-treated CdTe polycrystalline thin films: (1) grains having multiple {111} Σ3 TBs with a low angle to the film surface; (2) grains having multiple {111} Σ3 TBs parallel to the film surfaces; (3) small grains on a scale of not more than 500 nm, composed of Cd, Cl, Te, and O; and (4) CdTe grains with not more than two {111} Σ3 TBs. Grain boundaries (including TBs) exhibit enhanced current transport phenomena. However, the {111} Σ3 TB is much more beneficial to micro-current transport. The enhanced current transport can be explained by the lower electron potential at GBs (including TBs) than the grain interiors (GIs). Our results open new opportunities for enhancing solar cell performances by controlling the grain boundaries, and in particular TBs.

  18. Impact of thermal annealing on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Dhaka, M. S.

    2016-06-01

    A study on impact of post-deposition thermal annealing on the physical properties of CdTe thin films is undertaken in this paper. The thin films of thickness 500 nm were grown on ITO and glass substrates employing thermal vacuum evaporation followed by post-deposition thermal annealing in air atmosphere within low temperature range 150-350 °C. These films were subjected to the XRD, UV-Vis NIR spectrophotometer, source meter, SEM coupled with EDS and AFM for structural, optical, electrical and surface topographical analysis respectively. The diffraction patterns reveal that the films are having zinc-blende cubic structure with preferred orientation along (111) and polycrystalline in nature. The crystallographic parameters are calculated and discussed in detail. The optical band gap is found in the range 1.48-1.64 eV and observed to decrease with thermal annealing. The current-voltage characteristics show that the CdTe films exhibit linear ohmic behavior. The SEM studies show that the as-grown films are homogeneous, uniform and free from defects. The AFM studies reveal that the surface roughness of films is observed to increase with annealing. The experimental results reveal that the thermal annealing has significant impact on the physical properties of CdTe thin films and may be used as absorber layer to the CdTe/CdS thin films solar cells.

  19. Structural and optical analysis of 60Co gamma-irradiated thin films of polycrystalline Ga10Se85Sn5

    NASA Astrophysics Data System (ADS)

    Ahmad, Shabir; Asokan, K.; Shahid Khan, Mohd.; Zulfequar, M.

    2015-12-01

    The present study focuses on the effects of gamma irradiation on structural and optical properties of polycrystalline Ga10Se85Sn5 thin films with a thickness of ∼300 nm deposited by the thermal evaporation technique on cleaned glass substrates. X-ray diffraction patterns of the investigated thin films show that crystallite growth occurs in the orthorhombic phase structure. The surface study carried out by using the scanning electron microscope (SEM) confirms that the grain size increases with gamma irradiation. The optical parameters were estimated from optical transmission spectra data measured from a UV-vis-spectrophotometer in the wavelength range of 200-1100 nm. The refractive index dispersion data of the investigated thin films follow the single oscillator model. The estimated values of static refractive index n0, oscillator strength Ed, zero frequency dielectric constant ε0, optical conductivity σoptical and the dissipation factor increases after irradiation, while the single oscillator energy Eo decreases after irradiation. It was found that the value of the optical band gap of the investigated thin films decreases and the corresponding absorption coefficient increases continuously with an increase in the dose of gamma irradiation. This post irradiation changes in the values of optical band gap and absorption coefficient were interpreted in terms of the bond distribution model.

  20. Ultrafast optical control of magnetization dynamics in polycrystalline bismuth doped iron garnet thin films

    SciTech Connect

    Deb, Marwan Vomir, Mircea; Rehspringer, Jean-Luc; Bigot, Jean-Yves

    2015-12-21

    Controlling the magnetization dynamics on the femtosecond timescale is of fundamental importance for integrated opto-spintronic devices. For industrial perspectives, it requires to develop simple growth techniques for obtaining large area magneto-optical materials having a high amplitude ultrafast Faraday or Kerr response. Here we report on optical pump probe studies of light induced spin dynamics in high quality bismuth doped iron garnet polycrystalline film prepared by the spin coating method. We demonstrate an ultrafast non-thermal optical control of the spin dynamics using both circularly and linearly polarized pulses.

  1. Fabrication of polycrystalline CdTe thin-film solar cells using carbon electrodes with carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Okamoto, Tamotsu; Hayashi, Ryoji; Ogawa, Yohei; Hosono, Aikyo; Doi, Makoto

    2015-04-01

    The effects of adding carbon nanotubes (CNTs) to carbon back electrodes in polycrystalline CdTe thin-film solar cells were investigated. The CNTs were prepared by arc discharge under atmospheric pressure. The conductivity of the obtained CNT film with a density of 1.65 g/cm3 was approximately 2.6 × 103 S/cm. In the CdTe solar cells using carbon back electrodes with CNTs, the fill factor (FF) was improved as a result of adding CNTs with a concentration of 1 to 5 wt %. The improvement of FF was mainly due to the decrease in the series resistance of the CdTe solar cell. Furthermore, the open-circuit voltage (VOC) was improved by the CNT addition. The improvement of VOC was probably due to the reduction of the back barrier at the back contact.

  2. A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode

    NASA Astrophysics Data System (ADS)

    Ching-Lin Fan,; Yi-Yan Lin,; Jyu-Yu Chang,; Bo-Jhang Sun,; Yan-Wei Liu,

    2010-06-01

    This study presents one novel compensation pixel design and driving method for active matrix organic light-emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage feed-back method and the simulation results are proposed and verified by SPICE simulator. The measurement and simulation of LTPS TFT characteristics demonstrate the good fitting result. The proposed circuit consists of four TFTs and two capacitors with an additional signal line. The error rates of OLED anode voltage variation are below 0.3% under the threshold voltage deviation of driving TFT (Δ VTH = ± 0.33 V). The simulation results show that the pixel design can improve the display image non-uniformity by compensating the threshold voltage deviation of driving TFT and the degradation of OLED threshold voltage at the same time.

  3. A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode

    NASA Astrophysics Data System (ADS)

    Fan, Ching-Lin; Lin, Yi-Yan; Chang, Jyu-Yu; Sun, Bo-Jhang; Liu, Yan-Wei

    2010-06-01

    This study presents one novel compensation pixel design and driving method for active matrix organic light-emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage feed-back method and the simulation results are proposed and verified by SPICE simulator. The measurement and simulation of LTPS TFT characteristics demonstrate the good fitting result. The proposed circuit consists of four TFTs and two capacitors with an additional signal line. The error rates of OLED anode voltage variation are below 0.3% under the threshold voltage deviation of driving TFT (ΔVTH = ±0.33 V). The simulation results show that the pixel design can improve the display image non-uniformity by compensating the threshold voltage deviation of driving TFT and the degradation of OLED threshold voltage at the same time.

  4. Polycrystalline thin-film, cadmium-telluride solar cells fabricated by electrodeposition cells. Final subcontract report, March 20, 1992--April 27, 1995

    SciTech Connect

    Trefny, J.U.; Mao, D.; Kim, D.

    1995-10-01

    The objective of this project was to develop improved processes for the fabrication of CdTe/CdS polycrystalline thin film solar cells. The technique we used for the formation of CdTe, electrodeposition, was a non-vacuum, low-cost technique that is attractive for economic, large-scale production. Annealing effects and electrical properties are discussed.

  5. Tailoring of in-plane magnetic anisotropy in polycrystalline cobalt thin films by external stress

    NASA Astrophysics Data System (ADS)

    Kumar, Dileep; Singh, Sadhana; Vishawakarma, Pramod; Dev, Arun Singh; Reddy, V. R.; Gupta, Ajay

    2016-11-01

    Polycrystalline Co films of nominal thickness ~180 Å were deposited on intentionally curved Si substrates. Tensile and compressive stresses of 100 MPa and 150 MPa were induced in the films by relieving the curvature. It has been found that, within the elastic limit, presence of stress leads to an in-plane magnetic anisotropy in the film and its strength increases with increasing stress. Easy axis of magnetization in the films is found to be parallel/ transverse to the compressive /tensile stresses respectively. The origin of magnetic anisotropy in the stressed films is understood in terms of magneto- elastic coupling, where the stress try to align the magnetic moments in order to minimize the magneto-elastic as well as anisotropy energy. Tensile stress is also found to be responsible for the surface smoothening of the films, which is attributed to the movement of the atoms associated with the applied stress. The present work provides a possible way to tailor the magnetic anisotropy and its direction in polycrystalline and amorphous films using external stress.

  6. Ultralow thermal conductivity in polycrystalline CdSe thin films with controlled grain size.

    PubMed

    Feser, Joseph P; Chan, Emory M; Majumdar, Arun; Segalman, Rachel A; Urban, Jeffrey J

    2013-05-01

    Polycrystallinity leads to increased phonon scattering at grain boundaries and is known to be an effective method to reduce thermal conductivity in thermoelectric materials. However, the fundamental limits of this approach are not fully understood, as it is difficult to form uniform sub-20 nm grain structures. We use colloidal nanocrystals treated with functional inorganic ligands to obtain nanograined films of CdSe with controlled characteristic grain size between 3 and 6 nm. Experimental measurements demonstrate that thermal conductivity in these composites can fall beneath the prediction of the so-called minimum thermal conductivity for disordered crystals. The measurements are consistent, however, with diffuse boundary scattering of acoustic phonons. This apparent paradox can be explained by an overattribution of transport to high-energy phonons in the minimum thermal conductivity model where, in compound semiconductors, optical and zone edge phonons have low group velocity and high scattering rates.

  7. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

    NASA Astrophysics Data System (ADS)

    Machida, Emi; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ikenoue, Hiroshi

    2012-12-01

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 μm, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

  8. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

    SciTech Connect

    Machida, Emi; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ikenoue, Hiroshi

    2012-12-17

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

  9. Polycrystalline Thin Film Photovoltaics: From the Laboratory to Solar Fields (Presentation)

    SciTech Connect

    von Roedern, B.; Ullal, H.; Zweibel, K.

    2006-05-01

    The conclusions of this report are that: (1) many issues how thin-film solar cells work remain unresolved, requiring further fundamental R and D effort; (2) commercial thin-film PV module production reached 29% in 2005 in the US, indicating much more rapid growth than crystalline Si PV; (3) commercial module performance is increasing based on current knowledge, more R and D will lead to further improvement; and (4) stability of thin-film modules is acceptable ({le} 1% per year power loss) if the right manufacturing processes are used for manufacturing.

  10. Role of Polycrystalline Thin-Film PV Technologies in Competitive PV Module Markets: Preprint

    SciTech Connect

    von Roedern, B.; Ullal, H. S.

    2008-05-01

    This paper discusses the developments in thin-film PV technologies and provides an outlook on future commercial module efficiencies achievable based on today's knowledge about champion cell performance.

  11. Optical properties of vacuum evaporated Cd xSn 1-xSe polycrystalline thin films: influence of composition and thickness

    NASA Astrophysics Data System (ADS)

    Padiyan, D. Pathinettam; Marikani, A.; Murali, K. R.

    2005-03-01

    Polycrystalline Cd xSn 1-xSe material is synthesized by melt growth technique for various x values and thin films are prepared by vacuum evaporation technique. Optical transmittance measurements have been made on thin films of Cd xSn 1-xSe, with x=0,0.3,0.75 and 1 for various thicknesses. The studies reveal that these thin films have a direct allowed band gap energy and the indirect band gap energy is improbable. The band gap energy increases with decrease in thickness in all the compositions and it is attributed to the quantum size effect.

  12. Electrical and structural properties of semi-insulating polycrystalline silicon thin films

    NASA Astrophysics Data System (ADS)

    Lombardo, S.; Campisano, S. U.; Baroetto, F.

    1993-05-01

    Semi-insulating polycrystalline silicon layers with oxygen concentrations ranging from 2 up to 30 at. % O have been prepared by low-pressure chemical vapor deposition. After deposition, the samples were annealed at 920 °C for 30 min. Grain-size distributions, high- and low-frequency dielectric constants were measured, respectively, by transmission-electron microscopy, capacitance, and optical measurements as a function of the oxygen content. The average grain radius decreases with the oxygen content from 15 up to 2.5 nm. The current-voltage characteristics have been measured as a function of temperature in the range 80-450 K and under applied transverse electric fields up to ~=106 V/cm. In weak-transverse-field conditions, the current density as a function of temperature shows two thermally activated regions at low and high temperatures, with activation energies of ~=0.14 and ~=0.54 eV, respectively. The application of transverse electric fields of the order of ~=106 V/cm produces a current enhancement depending upon field intensity, temperature, and oxygen content. The results have been modeled by assuming thermionic emission, tunneling, and Frenkel generation in a long series of Schottky barriers formed at the boundary of the adjacent grains. The best-fit values of the model parameters indicate that for 30 at. % O a continuous SiO2 shell, two monolayers thick, surrounds each grain. For lower oxygen contents this shell is discontinuous and the carrier transport parameters change considerably.

  13. On the mechanism of carrier transport in metal-thin-oxide semiconductor diodes on polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    Kar, S.; Panchal, K. M.; Bhattacharya, S.; Varma, S.

    1982-12-01

    The carrier transport mechanism in MOS tunnel diodes and solar cells fabricated on cast polycrystalline silicon was investigated. The direct current-voltage and 100 kHz small signal capacitance-voltage characteristics of the diodes were measured at various values of device temperature ranging between 300-420 K. Polysilicon diodes which exhibited exponential I-V characteristics were chosen for analysis, and diodes located on large angle grain boundaries and on very small grains were excluded. In addition, several diodes and cells were fabricated on single-crystal silicon by identical processing and were measured and analyzed. Results show that the density and nature of defects present in the surface barrier region of the polysilicon material seem to have a significant influence on the mechanism of carrier transport across the barrier. The dominant transport mechanism becomes multistep tunneling with increase in the number of defects such as dislocations, incoherent twin boundaries, and precipitates, while in MOS tunnel diodes on single-crystal silicon the carrier transport mechanism was an activated process such as thermionic emission or minority-carrier injection. A milder influence was produced by stacking faults and coherent twin boundaries.

  14. Device Physics of Thin-Film Polycrystalline Cells and Modules; Final Subcontract Report; 6 December 1993-15 March 1998

    SciTech Connect

    Sites, J. R.

    1999-05-03

    This report describes work performed under this subcontract by Colorado State University (CSU). The results of the subcontract effort included progress in understanding CdTe and Cu(In1-xGax)Se2-based solar cells, in developing additional measurement and analysis techniques at the module level, and in strengthening collaboration within the thin-film polycrystalline solar-cell community. A major part of the CdTe work consisted of elevated-temperature stress tests to determine fabrication and operation conditions that minimize the possibility of long-term performance changes. Other CdTe studies included analysis of the back-contact junction, complete photon accounting, and the tradeoff with thin CdS between photocurrent gain and voltage loss. The Cu(In1-xGax)Se2 studies included work on the role of sodium in enhancing performance, the conditions under which conduction-band offsets affect cell performance, the transient effects of cycling between light and dark conditions, and detailed analysis of several individual series of cells. One aspect of thin-film module analysis has been addressing the differences in approach needed for relatively large individual cells made without grids. Most work, however, focused on analysis of laser-scanning data, including defect signatures, photocurrent/shunting separation, and the effects of forward bias or high-intensity light. Collaborations with other laboratories continued on an individual basis, and starting in 1994, collaboration was through the national R&D photovoltaic teams. CSU has been heavily involved in the structure and logistics of both the CdTe and CIS teams, as well as making frequent technical contributions in both areas.

  15. Progress Toward a Stabilization and Preconditioning Protocol for Polycrystalline Thin-Film Photovoltaic Modules

    SciTech Connect

    del Cueto, J. A.; Deline, C. A.; Rummel, S. R.; Anderberg, A.

    2010-08-01

    Cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules can exhibit substantial variation in measured performance depending on prior exposure history. This study examines the metastable performance changes in these PV modules with the goal of establishing standard preconditioning or stabilization exposure procedures to mitigate measured variations prior to current-voltage (IV) measurements.

  16. Growth and characterization of copper indium diselenide polycrystalline thin films for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Engelmann, Michael G.

    The incorporation of sulfur into CuInSe2 thin films was quantitatively investigated to establish a scientific and engineering basis for the fabrication of homogeneous and compositionally graded CuIn(Se,S)2 thin films. The motivation for this work was to develop a means of controlling the band gap for this class of materials to achieve improved performance in photovoltaic devices. The approach taken was the reaction of thin film Cu/In layers and CuInSe2 thin films in H2S and/or H2Se gasses at atmospheric pressure. The reaction of Cu/In layers in a mixture of H2S and H 2Se as a function of gas phase composition was investigated to quantify the relationship between the gas and solid phase compositions in the formation of homogeneous CuIn(Se,S)2 thin films. A reaction model, accounting for mixing and the presence of oxygen, was developed and regressed to the experimental data. This work then led to the development of a phenomenological model for the inhomogeneous incorporation of sulfur into CuInSe2 thin films by a surface reaction followed by diffusion. X-ray diffraction line profiles, grain size distribution, and grain boundary width were used in conjunction with a quantitative diffusion model to estimate the bulk and grain boundary diffusion of sulfur into CuInSe2. Diffusion coefficients were determined at multiple temperatures and activation energies were estimated. The analysis was also applied to the diffusion of CdS into CdTe that occurs during the post deposition thermochemical treatments that are necessary to achieve high performance CdTe solar cells. Bulk and grain boundary diffusion coefficients and activation energies for CdS-CdTe were estimated. Based on the analysis of both equilibrium chemistry and diffusion, a well defined process for the fabrication of homogeneous and graded CuIn(Se,S) 2 thin films was developed. This process provides a method of band gap engineering that has application in both the fabrication of wide band gap devices for use in

  17. Anisotropic and inhomogeneous thermal conduction in suspended thin-film polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Sood, Aditya; Cho, Jungwan; Hobart, Karl D.; Feygelson, Tatyana I.; Pate, Bradford B.; Asheghi, Mehdi; Cahill, David G.; Goodson, Kenneth E.

    2016-05-01

    While there is a great wealth of data for thermal transport in synthetic diamond, there remains much to be learned about the impacts of grain structure and associated defects and impurities within a few microns of the nucleation region in films grown using chemical vapor deposition. Measurements of the inhomogeneous and anisotropic thermal conductivity in films thinner than 10 μm have previously been complicated by the presence of the substrate thermal boundary resistance. Here, we study thermal conduction in suspended films of polycrystalline diamond, with thicknesses ranging between 0.5 and 5.6 μm, using time-domain thermoreflectance. Measurements on both sides of the films facilitate extraction of the thickness-dependent in-plane ( κ r ) and through-plane ( κ z ) thermal conductivities in the vicinity of the coalescence and high-quality regions. The columnar grain structure makes the conductivity highly anisotropic, with κ z being nearly three to five times as large as κ r , a contrast higher than that reported previously for thicker films. In the vicinity of the high-quality region, κ r and κ z range from 77 ± 10 W/m-K and 210 ± 50 W/m-K for the 1 μm thick film to 130 ± 20 W/m-K and 710 ± 120 W/m-K for the 5.6 μm thick film, respectively. The data are interpreted using a model relating the anisotropy to the scattering on the boundaries of columnar grains and the evolution of the grain size considering their nucleation density and spatial rate of growth. This study aids in the reduction in the near-interfacial resistance of diamond films and efforts to fabricate diamond composites with silicon and GaN for power electronics.

  18. MIS solar cells on thin polycrystalline silicon. Progress report No. 3, September 1-November 30, 1980

    SciTech Connect

    Anderson, W.A.

    1980-12-01

    The first task of this project involves electron-beam deposition of thin silicon films on low cost substrates. The goal is to obtain 20 ..mu..m thick films having 20 ..mu..m diameter crystallites which may be recrystallized to > 40 ..mu..m. Material characterization and device studies are to be included in efforts to reach a 6% conversion efficiency. The second task deals with MIS solar cell fabrication on various types of silicon including poly-Si, ribbon-Si, silicon on ceramic, and thin film silicon. Conduction mechanism studies, optimum engineering design, and modification of the fabrication process are to be used to achieve 13% efficiency on Xtal-Si and 11% efficiency on poly-Si. The third task involves more detailed test procedures and includes spectral response, interface and grain boundary effects, computer analysis, materials studies, and grain boundary passivation. Progress is detailed. (WHK)

  19. Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline lead zirconate titanate thin films

    NASA Astrophysics Data System (ADS)

    Araújo, E. B.; Lima, E. C.; Bdikin, I. K.; Kholkin, A. L.

    2013-05-01

    Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric, and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350 °C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300 °C. For pyrochlore-free PZT thin films, a small (100)-orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. The increase of self-polarization with the film thickness increasing from 200 nm to 710 nm suggests that Schottky barriers and/or mechanical coupling near the film-substrate interface are not primarily responsible for the observed self-polarization effect in our films.

  20. In-plane texturing control of Y-Ba-Cu-O thin films on polycrystalline substrates by ion-beam-modified intermediate buffer layers

    NASA Astrophysics Data System (ADS)

    Iijima, Y.; Onabe, K.; Futaki, N.; Tanabe, N.; Sadakata, N.; Kohno, O.; Ikeno, Y.

    1993-03-01

    Biaxially aligned YBCO thin films were successfully formed on polycrystalline Ni-based alloy by using ion-beam-modified yttria-stabilized-zirconia (YSZ) intermediate layers. YSZ layers were deposited by ion-beam-assisted deposition (IBAD) with concurrent off-axis ion beam bombardment. The YSZ 100-line axis was oriented normal to the substrate, and a YSZ 111-line axis was aligned to the bombarding ion beam axis. Explicit in-plane ordering was achieved on polycrystalline metallic substrates without epitaxial relationships. C-axis-oriented YBCO thin films were grown on those buffer layers, with controlled in-plane a- and b-axes, by pulsed laser deposition. At 77 K, 0 T and at 77 K, 0.6 T, 4.3 x 10 exp 5 A/sq cm and 1.1 x 10 exp 5 A/sq cm were achieved, respectively.

  1. Transport Properties of Anatase-TiO2 Polycrystalline-Thin-Film Field-Effect Transistors with Electrolyte Gate Layers

    NASA Astrophysics Data System (ADS)

    Horita, Ryohei; Ohtani, Kyosuke; Kai, Takahiro; Murao, Yusuke; Nishida, Hiroya; Toya, Taku; Seo, Kentaro; Sakai, Mio; Okuda, Tetsuji

    2013-11-01

    We have fabricated anatase-TiO2 polycrystalline-thin-film field-effect transistors (FETs) with poly(vinyl alcohol) (PVA), ion-liquid (IL), and ion-gel (IG) gate layers, and have tried to improve the response to gate voltage by varying the concentration of mobile ions in these electrolyte gate layers. The increase in the concentration of mobile ions by doping NaOH into the PVA gate layer or reducing the gelator in the IG gate layer markedly increases the drain-source current and reduces the driving gate voltage, which show that the mobile ions in the PVA, IL, and IG gate layers cause the formation of electric double layers (EDLs), which act as nanogap capacitors. In these TiO2-EDL-FETs, the slow formation of EDLs and the oxidation reaction at the interface between the surface of the TiO2 film and the electrolytes cause unideal FET properties. In the optimized IL and IG TiO2-EDL-FETs, the driving gate voltage is less than 1 V and the ON/OFF ratios of the transfer characteristics are about 1×104 at RT, and the nearly metallic state is realized at the interface purely by applying a gate voltage.

  2. A study on the optical and microstructural characteristics of quaternary Cu(In,Ga)Se2 polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Albin, D. S.; Tuttle, J. R.; Mooney, G. D.; Carapella, J. J.; Duda, A.

    The optical and microstructural properties of polycrystalline CuIn(1-y)Ga(y)Se2 (CIGS) thin films deposited by coevaporation are reported within the boundaries of an orthogonal experimental design investigating the effects of Cu flux, Ga/(Ga+In) composition, Se rate, substrate temperature, Ts, and substrate type. The optical bandgaps for near-stoichiometric CuIn(1-y)Ga(y)Se2 are smaller and exhibit bowing behavior which follows the relationship Eg = 1.011 + 0.664y + 0.249y(y-1). In comparison, Cu-poor films exhibit a linear variation with zero bowing given by Eg = 1.0032 + 0.71369y. The increase in Eg with decreasing Cu may result in part from lattice shrinkage as measured by X-ray diffraction (XRD). Optical absorption below the band edge appears to be dependent upon both Cu and Ga content. Absorption coefficients of alpha = 1000/cm or greater within this region are indicative of Cu-rich films. Absorption of 1000/cm or less may be dictated more by surface morphology and possible phase separation in films containing = 50 percent or more Ga. The magnitude of alpha varies from 20,000 near the band edge up to 100,000/cm at 1 eV above the edge for near-stoichiometric films, with the absorption in Cu-poor films being slightly less.

  3. Tunable thermal conductivity of thin films of polycrystalline AlN by structural inhomogeneity and interfacial oxidation.

    PubMed

    Jaramillo-Fernandez, J; Ordonez-Miranda, J; Ollier, E; Volz, S

    2015-03-28

    The effect of the structural inhomogeneity and oxygen defects on the thermal conductivity of polycrystalline aluminum nitride (AlN) thin films deposited on single-crystal silicon substrates is experimentally and theoretically investigated. The influence of the evolution of crystal structure, grain size, and out-of plane disorientation along the cross plane of the films on their thermal conductivity is analyzed. The impact of oxygen-related defects on thermal conduction is studied in AlN/AlN multilayered samples. Microstructure, texture, and grain size of the films were characterized by X-ray diffraction and scanning and transmission electron microscopy. The measured thermal conductivity obtained with the 3-omega technique for a single and multiple layers of AlN is in fairly good agreement with the theoretical predictions of our model, which is developed by considering a serial assembly of grain distributions. An effective thermal conductivity of 5.92 W m(-1) K(-1) is measured for a 1107.5 nm-thick multilayer structure, which represents a reduction of 20% of the thermal conductivity of an AlN monolayer with approximately the same thickness, due to oxygen impurities at the interface of AlN layers. Our results show that the reduction of the thermal conductivity as the film thickness is scaled down, is strongly determined by the structural inhomogeneities inside the sputtered films. The origin of this non-homogeneity and the effect on phonon scattering are also discussed.

  4. Structural and optical analyses of polycrystalline Zn1-xSbxSe thin films prepared by resistive heating technique

    NASA Astrophysics Data System (ADS)

    Rashid, R.; Mahmood, Arshad; Aziz, U.; Shah, A.; Ali, Zahid; Raza, Q.; Malik, Abdul; Rasheed, Muhammad Asim

    2016-01-01

    Here we report the influence of Sb doping on the structural and optical properties of Zn1-xSbxSe (0 ⩽ x ⩾ 0.15) thin films prepared by thermal evaporation technique on glass substrate. Various characterization techniques such as X-ray diffraction (XRD), EDS, Raman spectroscopy and spectroscopic ellipsometer are employed to assess the structural and optical properties of the deposited films. XRD analysis reveals the formation of polycrystalline cubic structure having preferred growth orientation along (1 1 1) plane without any evidence of secondary phases. Crystallographic parameters like grain size, micro strain, dislocation density, number of crystallites per unit area and texture coefficient point out the structural modification in ZnSe films with Sb inclusion. Raman analysis shows the existence of three 1LO, 2LO and 3LO phonon modes at 251, 511 and 745 cm-1 in pure ZnSe while 3LO mode disappears by the incorporation of Sb atoms in ZnSe matrix. Increase in FWHM of Raman peaks with Sb concentration also indicates the change in crystalline quality of ZnSe films which is in accordance with our XRD results. Spectroscopic ellipsometry results demonstrate a decreasing trend for the optical band gap energy (from 2.61 eV to 1.81 eV) with increasing Sb content.

  5. Structural and optical properties of (Ag,Cu)(In,Ga)Se{sub 2} polycrystalline thin film alloys

    SciTech Connect

    Boyle, J. H.; Shafarman, W. N.; Birkmire, R. W.; McCandless, B. E.

    2014-06-14

    The structural and optical properties of pentenary alloy (Ag,Cu)(In,Ga)Se{sub 2} polycrystalline thin films were characterized over the entire compositional range at a fixed (Cu + Ag)/(In + Ga) ratio. Films deposited at 550 °C on bare and molybdenum coated soda-lime glass by elemental co-evaporation in a single-stage process with constant incident fluxes exhibit single phase chalcopyrite structure, corresponding to 122 spacegroup (I-42d) over the entire compositional space. Unit cell refinement of the diffraction patterns show that increasing Ag substitution for Cu, the refined a{sub o} lattice constant, (Ag,Cu)-Se bond length, and anion displacement increase in accordance with the theoretical model proposed by Jaffe, Wei, and Zunger. However, the refined c{sub o} lattice constant and (In,Ga)-Se bond length deviated from theoretical expectations for films with mid-range Ag and Ga compositions and are attributed to influences from crystallographic bond chain ordering or cation electronegativity. The optical band gap, derived from transmission and reflection measurements, widened with increasing Ag and Ga content, due to influences from anion displacement and cation electronegativity, as expected from theoretical considerations for pseudo-binary chalcopyrite compounds.

  6. Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lee, Sang-hoon; Jung, Jae-soo; Lee, Sung-soo; Lee, Sung-bo; Hwang, Nong-moon

    2016-11-01

    For the applications such as flexible displays and solar cells, the direct deposition of crystalline silicon films on a flexible polymer substrate has been a great issue. Here, we investigated the direct deposition of polycrystalline silicon films on a polyimide film at the substrate temperature of 200 °C. The low temperature deposition of crystalline silicon on a flexible substrate has been successfully made based on two ideas. One is that the Si-Cl-H system has a retrograde solubility of silicon in the gas phase near the substrate temperature. The other is the new concept of non-classical crystallization, where films grow by the building block of nanoparticles formed in the gas phase during hot-wire chemical vapor deposition (HWCVD). The total amount of precipitation of silicon nanoparticles decreased with increasing HCl concentration. By adding HCl, the amount and the size of silicon nanoparticles were reduced remarkably, which is related with the low temperature deposition of silicon films of highly crystalline fraction with a very thin amorphous incubation layer. The dark conductivity of the intrinsic film prepared at the flow rate ratio of RHCl=[HCl]/[SiH4]=3.61 was 1.84×10-6 Scm-1 at room temperature. The Hall mobility of the n-type silicon film prepared at RHCl=3.61 was 5.72 cm2 V-1s-1. These electrical properties of silicon films are high enough and could be used in flexible electric devices.

  7. Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Cleaver, William M.; Barron, Andrew R.; Power, Michael B.; Hepp, Aloysius F.

    1992-01-01

    The dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.

  8. Development of tandem cells consisting of GaAs single crystal and CuInSe2/CdZnS polycrystalline thin films

    NASA Technical Reports Server (NTRS)

    Kim, Namsoo P.; Stanbery, Billy J.; Gale, Ronald P.; Mcclelland, Robert W.

    1989-01-01

    The tandem cells consisting of GaAs single crystal and CuInSe2 polycrystalline thin films are being developed under the joint program of the Boeing Co. and Kopin Corp. to meet the increasing power needs for future spacecraft. The updated status of this program is presented along with experimental results such as cell performance, and radiation resistance. Other cell characteristics including the specific power of and the interconnect options for this tandem cell approach are also discussed.

  9. Tutorial: Understanding residual stress in polycrystalline thin films through real-time measurements and physical models

    NASA Astrophysics Data System (ADS)

    Chason, Eric; Guduru, Pradeep R.

    2016-05-01

    Residual stress is a long-standing issue in thin film growth. Better understanding and control of film stress would lead to enhanced performance and reduced failures. In this work, we review how thin film stress is measured and interpreted. The results are used to describe a comprehensive picture that is emerging of what controls stress evolution. Examples from multiple studies are discussed to illustrate how the stress depends on key parameters (e.g., growth rate, material type, temperature, grain size, morphology, etc.). The corresponding stress-generating mechanisms that have been proposed to explain the data are also described. To develop a fuller understanding, we consider the kinetic factors that determine how much each of these processes contributes to the overall stress under different conditions. This leads to a kinetic model that can predict the dependence of the stress on multiple parameters. The model results are compared with the experiments to show how this approach can explain many features of stress evolution.

  10. Metastability of copper indium gallium diselenide polycrystalline thin film solar cell devices

    NASA Astrophysics Data System (ADS)

    Lee, Jinwoo

    High efficiency thin film solar cells have the potential for being a world energy solution because of their cost-effectiveness. Looking to the future of solar energy, there is the opportunity and challenge for thin film solar cells. The main theme of this research is to develop a detailed understanding of electronically active defect states and their role in limiting device performance in copper indium gallium diselenide (CIGS) solar cells. Metastability in the CIGS is a good tool to manipulate electronic defect density and thus identify its effect on the device performance. Especially, this approach keeps many device parameters constant, including the chemical composition, grain size, and interface layers. Understanding metastability is likely to lead to the improvement of CIGS solar cells. We observed systematic changes in CIGS device properties as a result of the metastable changes, such as increases in sub-bandgap defect densities and decreases in hole carrier mobilities. Metastable changes were characterized using high frequency admittance spectroscopy, drive-level capacitance profiling (DLCP), and current-voltage measurements. We found two distinctive capacitance steps in the high frequency admittance spectra that correspond to (1) the thermal activation of hole carriers into/out of acceptor defect and (2) a temperature-independent dielectric relaxation freeze-out process and an equivalent circuit analysis was employed to deduce the dielectric relaxation time. Finally, hole carrier mobility was deduced once hole carrier density was determined by DLCP method. We found that metastable defect creation in CIGS films can be made either by light-soaking or with forward bias current injection. The deep acceptor density and the hole carrier density were observed to increase in a 1:1 ratio, which seems to be consistent with the theoretical model of VCu-V Se defect complex suggested by Lany and Zunger. Metastable defect creation kinetics follows a sub-linear power law

  11. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    NASA Astrophysics Data System (ADS)

    Li, Wei; Varlamov, Sergey; Xue, Chaowei

    2014-09-01

    This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, Voc and Jsc than the one on the seed layer without RTA treatment.

  12. SEMICONDUCTOR DEVICES: A process simplification scheme for fabricating CMOS polycrystalline-Si thin film transistors

    NASA Astrophysics Data System (ADS)

    Miin-Horng, Juang; Chia-Wei, Chang; Der-Chih, Shye; Chuan-Chou, Hwang; Jih-Liang, Wang; Sheng-Liang, Jang

    2010-06-01

    A process simplification scheme for fabricating CMOS poly-Si thin-film transistors (TFTs) has been proposed, which employs large-angle-tilt-implantation of dopant through a gate sidewall spacer (LATITS). By this LATITS scheme, a lightly doped drain region under the oxide spacer is formed by low-dose tilt implantation of phosphorus (or boron) dopant through the spacer, and then the n+-source/drain (n+-S/D) (or p+-S/D) region is formed via using the same photo-mask layer during CMOS integration. For both n-TFT and p-TFT devices, as compared to the sample with conventional single n+-S/D (or p+-S/D) structure, the LATITS scheme can cause an obviously smaller leakage current, due to more gradual dopant distribution and thus smaller electric field. In addition, the resultant on-state currents only show slight degradation for the LATITS scheme. As a result, by the LATITS scheme, CMOS poly-Si TFT devices with an on/off current ratio well above 8 orders may be achieved without needing extra photo-mask layers during CMOS integration.

  13. Elastic properties determination of CuInSe2 polycrystalline thin films via a dynamic method

    NASA Astrophysics Data System (ADS)

    Hadjoub, Z.; Merdes, S.; Hadjoub, I.; Doghmane, A.

    2010-11-01

    Developing and using a simulation program based on the spectrum angular model, we first determine reflectance functions and acoustic signatures for bulk as well as for different thickness of CuInSe2 films. For bulk material, it is found that the longitudinal and Rayleigh modes are excited at incidence angles of 23.4° and 47°, respectively. This result reveals the great difficulties to characterize CuInSe2 with a conventional scanning acoustic microscope that uses a lens half- opening angle of 50° and water as a coupling liquid. Hence, Freon is used as alternative coupling liquid. Consequently, the effect of thickness on reflection coefficient and acoustic signature variations are quantified for both bulk and thin material. It is shown that as the thickness increases: (i) the critical angle of mode excitation increases, (ii) the periods of acoustic signature curves decrease and (iii) the Rayleigh velocity, VR, mode shifts towards lower values. Hence, a velocity dispersion curve is established in terms of VR as a function of film thickness; it decreases initially from the velocity value of the glass substrate then saturates when it reaches that of CuInSe2. The importance of such curve lies in the possibility of velocity determination by just knowing the thickness, and vice versa. Moreover, elastic constants are straight forward deduced from such a velocity.

  14. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report, 20 March 1995--19 March 1996

    SciTech Connect

    Trefny, J U; Mao, D

    1997-04-01

    The objective of this project is to develop improved processes for fabricating CdTe/CdS polycrystalline thin-film solar cells. Researchers used electrodeposition to form CdTe; electrodeposition is a non-vacuum, low-cost technique that is attractive for economic, large-scale production. During the past year, research and development efforts focused on several steps that are most critical to the fabricating high-efficiency CdTe solar cells. These include the optimization of the CdTe electrodeposition process, the effect of pretreatment of CdS substrates, the post-deposition annealing of CdTe, and back-contact formation using Cu-doped ZnTe. Systematic investigations of these processing steps have led to a better understanding and improved performance of the CdTe-based cells. Researchers studied the structural properties of chemical-bath-deposited CdS thin films and their growth mechanisms by investigating CdS samples prepared at different deposition times; investigated the effect of CdCl{sub 2} treatment of CdS films on the photovoltaic performance of CdTe solar cells; studied Cu-doped ZnTe as a promising material for forming stable, low-resistance contacts to the p-type CdTe; and investigated the effect of CdTe and CdS thickness on the photovoltaic performance of the resulting cells. As a result of their systematic investigation and optimization of the processing conditions, researchers improved the efficiency of CdTe/CdS cells using ZnTe back-contact and electrodeposited CdTe. The best CdTe/CdS cell exhibited a V{sub oc} of 0.778 V, a J{sub sc} of 22.4 mA/cm{sup 2}, a FF of 74%, and an efficiency of 12.9% (verified at NREL). In terms of individual parameters, researchers obtained a V{sub oc} over 0.8 V and a FF of 76% on other cells.

  15. Comparison of ZnO thin films grown on a polycrystalline 3C-SiC buffer layer by RF magnetron sputtering and a sol-gel method

    NASA Astrophysics Data System (ADS)

    Phan, Duy-Thach; Chung, Gwiy-Sang

    2011-02-01

    Zinc oxide (ZnO) thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer using RF magnetron sputtering and a sol-gel method. The post-deposition annealing was performed on ZnO thin films prepared using both methods. The formation of ZnO piezoelectric thin films with less residual stress was due to a close lattice mismatch of the ZnO and SiC layers as obtained by the sputtering method. Nanocrystalline, porous ZnO film prepared using the sol-gel method showed strong ultraviolet UV emission at a wavelength of 380 nm. The 3C-SiC buffer layer improved the optical and piezoelectric properties of the ZnO film produced by the two deposition methods. Moreover, the different structures of the ZnO films on the 3C-SiC intermediate layer caused by the different deposition techniques were also considered and discussed.

  16. Effect of yttrium-doping on the microstructures and semiconductor-metal phase transition characteristics of polycrystalline VO2 thin films

    NASA Astrophysics Data System (ADS)

    Gu, Deen; Sun, Zhanhong; Zhou, Xin; Guo, Rui; Wang, Tao; Jiang, Yadong

    2015-12-01

    We investigate the effect of yttrium-doping on the microstructures and semiconductor-metal phase transition characteristics of polycrystalline VO2 thin films prepared by reactively co-sputtering process. XPS analyses indicate the existence of Y3+ in the Y-doped VO2 films, but Y-doping hardly influences the chemical states of V and O elements. X-ray diffraction patterns and Raman spectra reveal that both undoped and Y-doped VO2 thin films have a polycrystalline structure of monoclinic VO2. The introduction of Y greatly reduces the grain size of VO2 thin films as evidenced by scanning electron microscopy analyses. The relationship between the hysteresis width and doping level is not monotonic although the grain size is monotonically reduced with increasing the doping level. Y-doped VO2 films with optimal doping level (1.82 at%) have a notably narrower hysteresis width (4.6 °C) than undoped VO2 films (10.7 °C). This is ascribed to increased heterogeneous nucleation centers due to Y in the VO2 lattice. With the further increase of doping level, the size effect gradually plays a prominent role in SMPT, and the hysteresis width of Y-doped VO2 films increases instead. The SMPT temperature of Y-doped VO2 films obviously decreases compared with undoped VO2 films due to reduced grain size and deformation of local structure around Y atom.

  17. A comparative study on in situ grown superconducting YBCO and YBCO-Ag thin films by PLD on polycrystalline SmBa2NbO6 substrate

    NASA Astrophysics Data System (ADS)

    Kurian, J.; John, Asha M.; Wariar, P. R. S.; Sajith, P. K.; Koshy, J.; Pai, S. P.; Pinto, R.

    2000-02-01

    The development and characterization of SmBa2NbO6, which is a new ceramic substrate material for the YBa2Cu3O7-icons/Journals/Common/delta" ALT="delta" ALIGN="MIDDLE"/> superconductor, are reported. SmBa2NbO6 has a complex cubic perovskite structure with lattice constant a = 8.524 Å. The dielectric properties of SmBa2NbO6 are in a range suitable for its use as a substrate for microwave applications. SmBa2NbO6 was found to have a thermal conductivity of 77 W m-1 K-1 and a thermal expansion coefficient of 7.8 × 10-6 °C-1 at room temperature. Superconducting YBa2 Cu3O7-icons/Journals/Common/delta" ALT="delta" ALIGN="MIDDLE"/> and YBa2Cu3O7-icons/Journals/Common/delta" ALT="delta" ALIGN="MIDDLE"/> -Ag thin films have been grown in situ on polycrystalline SmBa2NbO6 by the pulsed laser ablation technique. The films exhibited (00l) orientation of an orthorhombic YBa2 Cu3O7-icons/Journals/Common/delta" ALT="delta" ALIGN="MIDDLE"/> phase and gave a zero resistivity superconducting transition (TC(0)) at 90 K with a transition width of ~1.5 K. The critical current density of YBCO-Ag thin films grown on polycrystalline SmBa2NbO6 substrate was ~3 × 105 A cm-2 at 77 K. A comparative study of YBCO and YBCO-Ag thin films developed on polycrystalline SmBa2NbO6 substrate by PLD based on the crystallinity, orientation and critical current density of the YBCO film is discussed in detail.

  18. Metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor technology and application to flat-panel displays

    NASA Astrophysics Data System (ADS)

    Meng, Zhiguo

    High quality flat-panel displays (FPD) typically use active-matrix (AM) addressing, with the optical state of each pixel controlled by one or more active devices such as amorphous silicon (a-Si) thin film transistors (TFT). The successful examples are portable computer and liquid-crystal television (LC-TV). A high level of system on panel (SoP) electronic integration is required for versatile and compact systems. Meanwhile, many self-emitting display technologies are developing fast, active matrix for self-emitting display is typically current driven. The a-Si TFTs suffer from limited current driving capability, polycrystalline silicon (poly-Si) device technology is required. A new technology employing metal-induced unilaterally crystallization (MIUC) is presently reported. The device characteristics are obviously better than those in rapid-thermal annealed (RTA) and solid-phase crystallization (SPC) TFTs and the fabrication equipment is much cheaper than excimer laser crystallization (ELC) technology. The field effect mobility (muFE) of p- and n-channel MIUC TFTs is about 100cm2/Vs. Ion/I off is more than seven orders. Gate-induced leakage current in LT-MIUC poly-Si TFTs has been reduced by crystallization before heavy junction implantation to improve material quality and incorporating a gate-modulated lightly-doped drain (gamo-LDD) structure to reduce the electric field near the drain/channel junction region. At the same time, recrystallized (RC) MIUC TFT was researched with device characteristics improved. The 6.6cm 120 x 160 active matrix for OLED display is fabricated using LT-MIUC TFT technology on glass substrate. This display has the advantages of self-emitting, large intrinsic view angle and very fast response. At the same time, 6.6cm 120X160 AM-reflective twist nematic (RTN) display is fabricated using RC-MIUC TFT technology. This display is capable of producing 16 grade levels, 10:1 contrast and video image. The SOP display for AM-OLED were designed

  19. Local grain orientation and strain in polycrystalline YBa2Cu3O7-δ superconductor thin films measured by Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Amer, Maher S.; Maguire, John; Cai, L.; Biggers, R.; Busbee, J.; LeClair, S. R.

    2001-06-01

    We report direct measurements of local grain orientation and residual strain in polycrystalline, C-axis oriented thin YBa2Cu3O7-δ superconducting films using polarized Raman spectroscopy. Strain dependence of the Ag Raman active mode at 335 cm-1 was calibrated and used to measure local strain in the films. Our data showed that high quality films are associated with the connected path of uniform grain orientation (single crystal-like) across the film and uniform residual strain in the range of -0.3%. Nonuniform grain orientation or high angle grain boundaries and nonuniform local strains were associated with low quality films.

  20. Atomic-resolution characterization of the effects of CdCl{sub 2} treatment on poly-crystalline CdTe thin films

    SciTech Connect

    Paulauskas, T. Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Klie, R. F.

    2014-08-18

    Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl{sub 2} environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl{sub 2}, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

  1. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

    SciTech Connect

    Wohlgemuth, J.; Narayanan, M.

    2006-07-01

    The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

  2. Polycrystalline CuInSe2 thin films for solar cells by three-source magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Nakada, Tokio; Migita, Kazuo; Kunioka, Akio

    1993-08-01

    Polycrystalline CuInSe2 films were deposited in a wide range of Cu/In ratios by three-source magnetron sputtering technique onto soda-lime glass and Mo-coated glass substrates at elevated substrate temperatures. Good run-to-run reproductibility was achieved in our sputtering system using melt-grown polycrystalline selenium target. In excess films which are desirable for solar cells were obtained in the temperature range of 400 to 500 C. These films showed a preferential (112) orientation of the chalcopyrite structure and possessed an excellent adhesion property to the substrates. Preliminary solar cells with ZnO:Al/CdS/CuInSe2 structure resulted in a conversion efficiency of 6.3% under AM 1.5 illumination.

  3. Growth and properties of YBCO thin films on polycrystalline Ag substrates by inclined substrate pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Li, M.; Ma, B.; Koritala, R. E.; Fisher, B. L.; Dorris, S. E.; Venkataraman, K.; Balachandran, U.

    2002-06-01

    Fully c-axis-oriented YBCO films were directly deposited on polycrystalline silver substrates by inclined substrate pulsed laser ablation. The orientation and microstructure of the YBCO films were characterized by x-ray diffraction 2θ-scans, Ω-scans and pole figure analysis. Surface morphology was examined by scanning electron microscopy. Irregular-mosaic-shaped supergrains were observed in the films. Raman spectroscopy was used to evaluate the quality of the YBCO films. The superconducting transition temperature (Tc) and the critical current density (Jc) of the films were determined by inductive and transport measurements, respectively. Tc = 91 K with sharp transition and Jc = 2.7 × 105 A cm-2 at 77 K in zero field were obtained on a film that was 0.14 μm thick, 5 mm wide and 10 mm long. This work demonstrated a promising approach to obtain high-Jc YBCO films on nontextured polycrystalline silver substrate.

  4. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

    PubMed Central

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-01-01

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at −0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature. PMID:27098115

  5. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

    NASA Astrophysics Data System (ADS)

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-04-01

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at ‑0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature.

  6. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.

    PubMed

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-04-21

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at -0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm(2)/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature.

  7. Electrical Characteristics of Low-Temperature Polycrystalline Silicon Complementary Metal-Oxide-Semiconductor Thin-Film Transistors with Six-Step Photomask Structure

    NASA Astrophysics Data System (ADS)

    Lee, Sang-Jin; Park, Jae-Hoon; Oh, Kum-Mi; Lee, Seok-Woo; Lee, Kyung-Eon; Shin, Woo-Sup; Jun, Myung-chul; Yang, Yong-Suk; Hwang, Yong-Kee

    2011-06-01

    We propose two types of six-step photomask, complementary metal-oxide-semiconductor (CMOS), thin-film transistor (TFT) PCT device structures in order to simplify their fabrication process compared with that of conventional, low-temperature, polycrystalline silicon (LTPS) CMOS TFT devices. The initial charge transfer characteristics of both types of six-step PCT are equivalent to those of the conventional nine-step PCT. Both types of six-step PCT are comparable to the conventional nine-step mask lightly doped drain (LDD) device in terms of the dc device lifetime of over 10 years at Vds=5 V for line inversion driving, which is the normally recognized duration time for semiconducting devices.

  8. Driving Method Compensating for the Hysteresis of Polycrystalline Silicon Thin-Film Transistors for Active-Matrix Organic Light-Emitting Diode Displays

    NASA Astrophysics Data System (ADS)

    Jung, Myoung-Hoon; Kim, Ohyun; Kim, Byeong-Koo; Chung, Hoon-Ju

    2009-05-01

    A new driving method for active-matrix organic light-emitting diode displays is proposed and evaluated. The pixel structure of the proposed driving method is composed of three thin-film transistors (TFTs) and one capacitor. It inserts black data into display images to reset driving TFTs for the purpose of maintaining constant electrical characteristics of driving TFTs. The proposed driving scheme is less sensitive to the hysteresis of low-temperature polycrystalline silicon (LTPS) TFTs than the conventional pixel structure with two TFTs and one capacitor, and this scheme can virtually eliminate the recoverable residual image that occurs owing to the hysteresis characteristics of LTPS TFTs. In the proposed driving scheme, black data are inserted into displayed images so that the motion image quality is improved.

  9. Controllability of self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors on a glass substrate

    NASA Astrophysics Data System (ADS)

    Ohsawa, Hiroki; Sasaki, Shun; Hara, Akito

    2016-03-01

    Self-aligned four-terminal n-channel (n-ch) and p-channel (p-ch) planar embedded metal double-gate polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at a low temperature of 550 °C. This device includes a metal top gate (TG) and a metal bottom gate (BG), which are used as the drive and control gates or vice versa. The BG was embedded in a glass substrate, and a poly-Si channel with large lateral grains was fabricated by continuous-wave laser lateral crystallization. The threshold voltage modulation factors under various control gate voltages (γ = ΔVth/ΔVCG) were nearly equal to the theoretical predictions in both the n- and p-ch TFTs. By exploiting this high controllability, an enhancement depletion (ED) inverter was fabricated, and successful operation at 2.0 V was confirmed.

  10. A low-temperature polycrystalline-silicon thin-film transistor micro-manipulation array with indium tin oxide micro-coils and real-time detection

    NASA Astrophysics Data System (ADS)

    Chen, Chih-Yang; Huang, Chien-Yu; Lin, Chrong-Jung; King, Ya-Chin

    2009-12-01

    This study proposes an array for a bio-handling system consisting of microcoils on top of photodetectors fabricated by low-temperature polycrystalline-silicon thin-film transistor (LTPS-TFT) technology on a glass substrate. Using magnetic beads as the medium, the proposed system can simultaneously monitor and manipulate micrometer-sized bio-samples. In a manipulation system based on magnetic force, photo-detecting is a reliable method, immune to the interference caused by electromagnetic fields. Under 480 lux ambient white light, the sensor can detect a microbead as small as 23 µm in diameter with detectable output difference. It provides a new, easier way for handling samples on a small chip.

  11. Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

    DOEpatents

    Findikoglu, Alp T.; Jia, Quanxi; Arendt, Paul N.; Matias, Vladimir; Choi, Woong

    2009-10-27

    A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

  12. Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor

    SciTech Connect

    Hashimoto, Masaki; Kanomata, Kensaku; Momiyama, Katsuaki; Kubota, Shigeru; Hirose, Fumihiko

    2012-01-09

    In this study, we developed a measurement method for field-effect-carrier mobility across a single grain boundary in polycrystalline Si (poly Si) used for solar cell production by using an organic gate field-effect transistor (FET). To prevent precipitation and the diffusion of impurities affecting the electronic characteristics of the grain boundary, all the processing temperatures during FET fabrication were held below 150 deg. C. From the grain boundary, the field-effect mobility was measured at around 21.4 cm{sup 2}/Vs at 297 K, and the temperature dependence of the field-effect mobility suggested the presence of a potential barrier of 0.22 eV at the boundary. The technique presented here is applicable for the monitoring of carrier conduction characteristics at the grain boundary in poly Si used for the production of solar cells.

  13. Polycrystalline domain structure of pentacene thin films epitaxially grown on a hydrogen-terminated Si(111) surface

    SciTech Connect

    Nishikata, S.; Sadowski, J. T.; Al-Mahboob, A.; Nishihara, T.; Fujikawa, Y.; Sakurai, T.; Nakajima, K.; Sazaki, G.; Suto, S.

    2007-10-15

    Single-monolayer high pentacene (Pn) dendrites grown on a hydrogen-terminated Si(111) surface [H-Si(111)] under ultrahigh vacuum were observed by low-energy electron microscopy and microbeam low-energy electron diffraction analyses. We determined the epitaxial structure (type I) inside a unique polycrystalline domain structure of such dendrites, each of which has six equivalent epitaxial orientations of Pn two-dimensional (2D) unit cells. There are three sets of these cells, which are rotated {+-}120 deg. relative to each other. Domain boundaries inside each dendrite were successfully observed by scanning tunneling microscopy. In addition, we found another epitaxial relation (type II): the polycrystalline domain structure and lattice parameters are similar to those of the type-I dendrite; however, the 2D unit cells of the type-II dendrite are rotated approximately 90 deg. relative to those of the type-I dendrite. These results suggest that the crystal structure of the dendrites on H-Si(111) is determined mainly by the interaction between Pn molecules. Each dendrite is composed of domains that are exclusively of type I or II. The so-called point-on-line coincidences are found between the Pn 2D lattices of types I and II, and H-Si(111). The higher commensurability of the type-I dendrites than the type-II dendrites results in a higher probability of type-I dendrite formation. Moreover, for both the type-I and type-II dendrites, we found supercell structures. We estimated the minimum interface energy between the dendrite and H-Si(111) from an island's free energy, which is necessary to reproduce the growth of a single-monolayer high dendrite.

  14. Polycrystalline silicon thin-film transistor with nickel-titanium oxide by sol-gel spin-coating and nitrogen implantation

    NASA Astrophysics Data System (ADS)

    Wu, Shih-Chieh; Hou, Tuo-Hung; Chuang, Shiow-Huey; Chou, Hsin-Chih; Chao, Tien-Sheng; Lei, Tan-Fu

    2012-12-01

    This study demonstrates polycrystalline silicon thin-film transistors (poly-Si TFTs) integrated with a high-κ nickel-titanium oxide (NiTiO3) gate dielectric using sol-gel spin-coating and nitrogen channel implantation. This novel fabrication method of the high-κ NiTiO3 gate dielectric offers thin equivalent-oxide thickness and high gate capacitance density, favorable for increasing the current driving capability. Introducing nitrogen ions into the poly-Si using implantation effectively passivates the trap states not only in the poly-Si channel but also at the gate dielectric/poly-Si interface. The poly-Si NiTiO3 TFTs with nitrogen implantation exhibit significantly improved electrical characteristics, including lower threshold voltage, a steeper subthreshold swing, higher field-effect mobility, a larger on/off current ratio, and less threshold-voltage roll-off. Furthermore, the nitrogen implantation improves the reliability of poly-Si NiTiO3 TFTs against hot-carrier stress and positive bias temperature instability.

  15. Polycrystalline ZnTe thin film on silicon synthesized by pulsed laser deposition and subsequent pulsed laser melting

    NASA Astrophysics Data System (ADS)

    Xu, Menglei; Gao, Kun; Wu, Jiada; Cai, Hua; Yuan, Ye; Prucnal, S.; Hübner, R.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

    2016-03-01

    ZnTe thin films on Si substrates have been prepared by pulsed laser deposition and subsequent pulsed laser melting (PLM) treatment. The crystallization during PLM is confirmed by Raman scattering, x-ray diffraction and room temperature photoluminescence (PL) measurements. The PL results show a broad peak at 574 nm (2.16 eV), which can be assigned to the transitions from the conduction band to the acceptor level located at 0.145 eV above the valence band induced by zinc-vacancy ionization. Our work provides an applicable approach to low temperature preparation of crystalline ZnTe thin films.

  16. Low Temperature Deposition of PECVD Polycrystalline Silicon Thin Films using SiF4 / SiH4 mixture

    NASA Astrophysics Data System (ADS)

    Syed, Moniruzzaman; Inokuma, Takao; Kurata, Yoshihiro; Hasegawa, Seiichi

    2016-03-01

    Polycrystalline silicon films with a strong (110) texture were prepared at 400°C by a plasma-enhanced chemical vapor deposition using different SiF4 flow rates ([SiF4] = 0-0.5 sccm) under a fixed SiH4 flow rate ([SiH4] = 1 or 0.15 sccm). The effects of the addition of SiF4 to SiH4 on the structural properties of the films were studied by Raman scattering, X-ray diffraction (XRD), Atomic force microscopy and stress measurements. For [SiH4] = 1 sccm, the crystallinity and the (110) XRD grain size monotonically increased with increasing [SiF4] and their respective maxima reach 90% and 900 Å. However, for [SiH4] = 0.15 sccm, both the crystallinity and the grain size decreased with [SiF4]. Mechanisms causing the change in crystallinity are discussed, and it was suggested that an improvement in the crystallinity, due to the addition of SiF4, is likely to be caused by the effect of a change in the surface morphology of the substrates along with the effect of in situ chemical cleaning.

  17. Polycrystalline photovoltaic cell

    SciTech Connect

    Jordan, J.F.; Lampkin, C.M.

    1983-10-25

    A photovoltaic cell is disclosed, having an electrically conductive substrate, which may be glass having a film of conductive tin oxide; a first layer containing a suitable semiconductor, which layer has a first component film with an amorphous structure and a second component film with a polycrystalline structure; a second layer forming a heterojunction with the first layer; and suitable electrodes where the heterojunction is formed from a solution containing copper, the amorphous film component is superposed above an electrically conductive substrate to resist permeation of the copper-containing material to shorting electrical contact with the substrate. The penetration resistant amorphous layer permits a variety of processes to be used in forming the heterojunction with even very thin layers (1-6 /SUB u/ thick) of underlying polycrystalline semiconductor materials. In some embodiments, the amorphous-like structure may be formed by the addition of aluminum or zirconium compounds to a solution of cadmium salts sprayed over a heated substrate.

  18. Device physics of thin-film polycrystalline cells and modules: Phase 1 annual report: February 1998--January 1999

    SciTech Connect

    Sites, J. R.

    1999-12-21

    This report describes work done by Colorado State University (CSU) during Phase 1 of this subcontract. CSU researchers continued to make basic measurements on CI(G)S and CdTe solar cells fabricated at different labs, to quantitatively deduce the loss mechanisms in these cells, and to make appropriate comparisons that illuminate where progress is being made. Cells evaluated included the new record CIGS cell, CIS cells made with and without CdS, and those made by electrodeposition and electroless growth from solution. Work on the role of impurities focused on sodium in CIS. Cells with varying amounts of sodium added during CIS deposition were fabricated at NREL using four types of substrates. The best performance was achieved with 10{sup {minus}2}--10{sup {minus}1} at% sodium, and the relative merits of proposed mechanisms for the sodium effect were compared. Researchers also worked on the construction and testing of a fine-focused laser-beam apparatus to measure local variations in polycrystalline cell performance. A 1{micro}m spot was achieved, spatial reproducibility in one and two dimensions is less than 1 {micro}m, and photocurrent is reliably measured when the 1{micro}m spot is reduced as low as 1-sun in intensity. In elevated-temperature stress tests, typical CdTe cells held at 100 C under illumination and normal resistive loads for extended periods of time were generally very stable; but those held under reverse or large forward bias and those contacted using larger amounts of copper were somewhat less stable. CdTe cell modeling produced reasonable fits to experimental data, including variations in back-contact barriers. A major challenge being addressed is the photovoltaic response of a single simple-geometry crystallite with realistic grain boundaries.

  19. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors.

    PubMed

    El-Mohri, Youcef; Antonuk, Larry E; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A; Lu, Jeng-Ping

    2009-07-01

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and/or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of approximately 10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in

  20. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors

    SciTech Connect

    El-Mohri, Youcef; Antonuk, Larry E.; Koniczek, Martin; Zhao Qihua; Li Yixin; Street, Robert A.; Lu Jengping

    2009-07-15

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and/or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of {approx}10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical

  1. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors

    PubMed Central

    El-Mohri, Youcef; Antonuk, Larry E.; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A.; Lu, Jeng-Ping

    2009-01-01

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and∕or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of ∼10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical fill

  2. A Optical and Microstructural Characterization Study and Microstructural Model of Co-Evaporated Polycrystalline Thin Film Copper Indium Diselenide for Photovoltaic Applications

    NASA Astrophysics Data System (ADS)

    Tuttle, John R.

    The electrical, optical, microstructural, and morphological properties of polycrystalline thin film CuInSe _2 are investigated by X-Ray Diffraction, spectrophotometry, and Transmission Electron Microscopy as a function of compositional parameters and processing conditions. The film microstructure is redefined as a compositionally and temperature dependent polycrystalline aggregate mixture of CuInSe_2 and Cu_{rm x}Se/In _{rm y}Se minor phases, with a core crystallite exhibiting order-disorder phase separation and a CuInSe_2-CuIn_2 Se_{3.5} solid solution. The secondary phase phenomena includes Cu _{1.85}Se at grain boundaries and free surfaces, with sufficient amount for percolation in near-stoichiometric and Cu-rich compositions, and Cu _{rm x}Se inclusions for Cu-rich compositions, and for Cu-poor compositions at substrate temperatures of 500^circC. The inclusions are modeled by the Maxwell-Garnett theory as metallic inclusions with a filling fraction as little as eta = 0.01. The observed polymorphisms include phase separation of ordered chalcopyrite and disordered sphalerite regions, where the latter is the majority phase, and a solid solution of chalcopyrite CuInSe_2 and the ordered vacancy compound (OVC) CuIn_2Se _{3.5}, with an associated temperature dependent lattice shrinkage proportional to the deviation in molecularity. The polymorphisms reported here are the first in the CuInSe_2 material system. The stability of excessive Cu-vacancies observed in the OVC has significant ramifications on the electronic structure of CuInSe_2. The optical absorption coefficient, alpha , for thin film CuInSe_2 is reported as a function of composition and exhibits behavior indicative of a two-phase mixture and a solid solution for Cu-rich and Cu-poor compositions, respectively. The magnitude of alpha is significantly lower than previously reported values, and is substantiated by device modeling that accurately reproduces the measured internal quantum efficiency of Cd

  3. Effects of gate insulator using high pressure annealing on the characteristics of solid phase crystallized polycrystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Moojin; Jin, GuangHai

    2009-04-01

    The oxidizing ambient was built using high pressure H2O vapor at 550 °C. For the solid phase crystallization (SPC) polycrystalline silicon (poly-Si) that is annealed for 1 h at 2 MPa, the oxide thickness is about 150 Å. The oxide layer is approximately 90 Å above the original surface of the poly-Si and 60 Å below the original surface. The oxide layer is used as the first gate insulator layer of thin-film transistors (TFTs). The heating at 550 °C with 2 MPa H2O vapor increased the carrier mobility from 17.6 cm2/V s of the conventional SPC process to 30.4 cm2/V s, and it reduced the absolute value of the threshold voltage (Vth) from 4.13 to 3.62 V. The subthreshold swing also decreased from 0.72 to 0.60 V/decade. This improvement is attributed mainly to the reduction in defect density at the oxide/poly-Si interface and in the poly-Si film by the high pressure annealing (HPA) process. Since the realization of excellent performance at the oxide/poly-Si interface and in poly-Si depends on the defect density, the poly-Si having the thermal oxide formed by a combined process of SPC and HPA may be well suited for fabrication of poly-Si TFTs for flat panel displays such as active matrix organic light emitting diodes.

  4. Superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} thin films on polycrystalline ferrite for magnetically tunable microwave components

    SciTech Connect

    Jia, Q.X.; Findikoglu, A.T.; Arendt, P.; Foltyn, S.R.; Roper, J.M.; Groves, J.R.; Coulter, J.Y.; Li, Y.Q.; Dionne, G.F.

    1998-04-01

    Superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO) thin films with a surface resistance of 0.86 m{Omega} at 10 GHz and 76 K have been grown on polycrystalline ferrite yttrium iron garnet (YIG) substrates. The chemical and structural mismatches between YBCO and YIG are solved by using a double buffer layer of biaxially oriented yttria-stabilized zirconia (YSZ) and CeO{sub 2}, where YSZ is deposited by an ion-beam-assisted-deposition technique. The YBCO films are {ital c} axis oriented with an in-plane mosaic spread [full width at half maximum of an x-ray {phi}-scan on (103) reflection] of less than 8{degree}. The films have a superconductive transition temperature above 88 K with a transition width less than 0.3 K, giving a critical current density above 10{sup 6}A/cm{sup 2} in self field at 75 K. At 75 K in an external magnetic field of 1 T perpendicular to the film surface, the films maintain a critical current density over 2{times}10{sup 5}A/cm{sup 2}. {copyright} {ital 1998 American Institute of Physics.}

  5. Atomic-resolution study of dislocation structures and interfaces in poly-crystalline thin film CdTe using aberration-corrected STEM

    NASA Astrophysics Data System (ADS)

    Paulauskas, Tadas; Colegrove, Eric; Buurma, Chris; Kim, Moon; Klie, Robert

    2014-03-01

    Commercial success of CdTe-based thin film photovoltaic devices stems from its nearly ideal direct band gap which very effectively couples to Sun's light spectrum as well as ease of manufacturing and low cost of these modules. However, to further improve the conversion efficiency beyond 20 percent, it is important to minimize the harmful effects of grain boundaries and lattice defects in CdTe. Direct atomic-scale characterization is needed in order identify the carrier recombination centers. Likewise, it is necessary to confirm that passivants in CdTe, such as Cl, are able to diffuse and bind to the target defects. In this study, we characterize dislocation structures and grain boundaries in poly-crystalline CdTe using aberration-corrected cold-field emission scanning transmission electron microscopy (STEM). The chemical composition of Shockley partial, Frank and Lomer-Cottrell dislocations is examined via atomic column-resolved X-ray energy dispersive (XEDS) and electron energy-loss spectroscopies (EELS). Segregation of Cl towards dislocation cores and grain boundaries is shown in CdCl2 treated samples. We also investigate interfaces in ultra-high-vacuum bonded CdTe bi-crystals with pre-defined misorientation angles which are intended to mimic grain boundaries. Funded by: DOE EERE Sunshot Award EE0005956.

  6. Preparation of translucent Gd2Si2O7:Ce polycrystalline thin plates and their scintillation performance for α-particles

    NASA Astrophysics Data System (ADS)

    Nishikata, Mami; Ueda, Aki; Higuchi, Mikio; Kaneko, Junichi H.; Tsubota, Youichi; Ishibashi, Hiroyuki

    2015-07-01

    Translucent Gd2Si2O7:Ce (GPS:Ce) polycrystalline plates were prepared via liquid-phase sintering using SiO2 as a self-flux, and their scintillation performances for α-particles were investigated. Dense sintered compacts comprising large grains, some of which were larger than 100 μm in diameter, were successfully prepared by sintering at 1690 °C for 100 h. The best result was obtained with the powder comprising only <40 μm particles. Any combination of powders of <40 μm and <15 μm resulted in inhomogeneous structures with smaller grains of about 50 μm. A translucent GPS:Ce thin plate was fabricated by grinding the sintered compact that contained excess SiO2 of 8 mol%. Since the plate was composed of large grains, scattering at the grain boundaries was effectively suppressed and many of the grains virtually act as single crystals when the plate thickness was less than 100 μm. Therefore, the decrease in the plate thickness brought increase in the total transmission, and light yield and energy resolution were consequently improved. When the plate thickness was 50 μm, light yield was 82% as compared with that of a GPS:Ce single crystal as a reference, and energy resolution attained to 13%.

  7. Characterization of excimer laser annealed polycrystalline Si1-xGex alloy thin films by x-ray diffraction and spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Yu, Guolin; Krishna, Kalaga Murali; Shao, Chunlin; Umeno, Masayoshi; Soga, Tetsuo; Watanabe, Junji; Jimbo, Takashi

    1998-01-01

    Thin films of Si1-xGex alloys of different compositions x have been deposited, on single-crystal Si (100) surface and glass substrates, by simple ion beam sputtering, at room temperature. Crystallization of these films has been done using excimer laser annealing. Structural and optical properties of as-deposited and annealed Si1-xGex alloy films are characterized by x-ray diffraction (XRD), uv-visible spectrophotometry, spectroscopic ellipsometry (SE), and Auger electron spectroscopy (AES). The as-deposited films, both on Si and glass, have been found to be amorphous by XRD. Polycrystalline nature of laser-annealed samples has been evidenced by both x-ray and SE measurements. The results of x-ray, uv-visible, AES, and SE are compared and discussed. The poly-Si1-xGex films were oriented predominantly to (111) and the grain sizes were determined from half-width of x-ray peaks. The compositions x of Si1-xGex films have been evaluated from the SE dielectric function ɛ(ω) data, using the second-derivative technique, and are found to be 0.23 and 0.36 for two different compositions. A detailed analysis of ɛ(ω) with the effective-medium theory has demonstrated the volume fraction of crystalline Si1-xGex increases with the increasing energy of laser irradiation.

  8. Exploration of maximum count rate capabilities for large-area photon counting arrays based on polycrystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua

    2016-03-01

    Pixelated photon counting detectors with energy discrimination capabilities are of increasing clinical interest for x-ray imaging. Such detectors, presently in clinical use for mammography and under development for breast tomosynthesis and spectral CT, usually employ in-pixel circuits based on crystalline silicon - a semiconductor material that is generally not well-suited for economic manufacture of large-area devices. One interesting alternative semiconductor is polycrystalline silicon (poly-Si), a thin-film technology capable of creating very large-area, monolithic devices. Similar to crystalline silicon, poly-Si allows implementation of the type of fast, complex, in-pixel circuitry required for photon counting - operating at processing speeds that are not possible with amorphous silicon (the material currently used for large-area, active matrix, flat-panel imagers). The pixel circuits of two-dimensional photon counting arrays are generally comprised of four stages: amplifier, comparator, clock generator and counter. The analog front-end (in particular, the amplifier) strongly influences performance and is therefore of interest to study. In this paper, the relationship between incident and output count rate of the analog front-end is explored under diagnostic imaging conditions for a promising poly-Si based design. The input to the amplifier is modeled in the time domain assuming a realistic input x-ray spectrum. Simulations of circuits based on poly-Si thin-film transistors are used to determine the resulting output count rate as a function of input count rate, energy discrimination threshold and operating conditions.

  9. In-situ investigation of thermal instabilities and solid state dewetting in polycrystalline platinum thin films via confocal laser microscopy

    SciTech Connect

    Jahangir, S.; Cheng, Xuan; Huang, H. H.; Nagarajan, V.; Ihlefeld, J.

    2014-10-28

    Solid state dewetting and the subsequent morphological changes for platinum thin films grown on zinc oxide (ZnO) buffered (001) silicon substrates (Pt/ZnO/SiO{sub 2}/(001)Si system) is investigated under vacuum conditions via a custom-designed confocal laser microscope coupled with a laser heating system. Live imaging of thin film dewetting under a range of heating and quenching vacuum ambients reveals events including hillock formation, hole formation, and hole growth that lead to formation of a network of Pt ligaments, break up of Pt ligaments to individual islands and subsequent Pt islands shape reformation, in chronological fashion. These findings are corroborated by ex-situ materials characterization and quantitative electron microscopy analysis. A secondary hole formation via blistering before film rupture is revealed to be the critical stage, after which a rapid dewetting catastrophe occurs. This process is instantaneous and cannot be captured by ex-situ methods. Finally, an intermetallic phase forms at 900 °C and alters the morphology of Pt islands, suggesting a practical limit to the thermal environments that may be used for these platinized silicon wafers in vacuum conditions.

  10. Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

    SciTech Connect

    Yun, J. Varalmov, S.; Huang, J.; Green, M. A.; Kim, K.

    2014-06-16

    The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-μm thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550 °C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450 °C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550 °C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450 °C, which limits the solar cell performance by n = 2 recombination, and a performance degradation is expected due to severe shunting.

  11. Surface Modification of Polycrystalline Cu(In,Ga)Se2 Thin-Film Solar Cell Absorber Surfaces for PEEM Measurements

    SciTech Connect

    Wilks, R. G.; Contreras, M. A.; Lehmann, S.; Herrero-Albillos, J.; Bismaths, L. T.; Kronast, F.; Noufi, R.; Bar, M.

    2011-01-01

    We present a thorough examination of the {micro}m-scale topography of Cu(In, Ga)Se{sub 2} ('CIGSe') thin-film solar cell absorbers using different microscopy techniques. We specifically focus on the efficacy of preparing smooth sample surfaces - by etching in aqueous bromine solution - for a spatially resolved study of their chemical and electronic structures using photoelectron emission microscopy (PEEM). The etching procedure is shown to reduce the CIGSe surface roughness from ca. 40 to 25 nm after 40s etching, resulting in an increase in the quality of the obtained PEEM images. Furthermore we find that the average observed grain size at the etched surfaces appears larger than at the unetched surfaces. Using a liftoff procedure, it is additionally shown that the backside of the absorber is flat but finely patterned, likely due to being grown on the finely-structured Mo back contact.

  12. The effect of Ta doping in polycrystalline TiO{sub x} and the associated thin film transistor properties

    SciTech Connect

    Ok, Kyung-Chul Park, Yoseb Park, Jin-Seong E-mail: jsparklime@hanyang.ac.kr; Chung, Kwun-Bum E-mail: jsparklime@hanyang.ac.kr

    2013-11-18

    Tantalum (Ta) is suggested to act as an electron donor and crystal phase stabilizer in titanium oxide (TiO{sub x}). A transition occurs from an amorphous state to a crystalline phase at an annealing temperature above 300 °C in a vacuum ambient. As the annealing temperature increases from 300 °C to 450 °C, the mobility increases drastically from 0.07 cm{sup 2}/Vs to 0.61 cm{sup 2}/Vs. The remarkable enhancement of thin film transistor performance is suggested to be due to the splitting of Ti 3d band orbitals as well as the increase in Ta{sup 5+} ions that can act as electron donors.

  13. Symmetry dependent optoelectronic properties of grain boundaries in polycrystalline Cu(In,Ga)Se{sub 2} thin films

    SciTech Connect

    Müller, Mathias; Bertram, Frank; Christen, Jürgen; Abou-Ras, Daniel Rissom, Thorsten

    2014-01-14

    In a correlative study applying electron backscatter diffraction as well as spatially and spectrally resolved cathodoluminescence spectroscopy at low temperatures of about 5 K, the symmetry-dependent optoelectronic properties of grain boundaries in Cu(In,Ga)Se{sub 2} thin films have been investigated. We find that grain boundaries with lower symmetries tend to show a distinct spectral red shift of about 10 meV and a weak influence on the emission intensity. These behaviors are not detected at high-symmetry Σ3 grain boundaries, or at least in a strongly reduced way. The investigations in the present work help to clarify the ambivalent properties reported for grain boundaries in Cu(In,Ga)Se{sub 2}.

  14. Effect of depth of traps in ZnO polycrystalline thin films on ZnO-TFTs performance

    NASA Astrophysics Data System (ADS)

    Medina-Montes, Maria I.; Baldenegro-Perez, Leonardo A.; Sanchez-Zeferino, Raul; Rojas-Blanco, Lizeth; Becerril-Silva, Marcelino; Quevedo-Lopez, Manuel A.; Ramirez-Bon, Rafael

    2016-09-01

    ZnO thin films were processed by radio frequency magnetron sputtering at room temperature on p-Si/SiO2 substrates under pure argon (Ar:O2 = 100:0 vol.%) and argon-oxygen mixture (Ar:O2 = 99:1 vol.%) gas environment. Morphological, optical and electrical characteristics of the ZnO films are reported, and they show a clear relationship with the gas mixture employed for the sputtering process. Scanning Electron Microscopy revealed the formation of grains of 15.3 and 19.9 nm average sizes and thicknesses of 59 nm and 82 nm for films growth in pure argon and argon-oxygen, respectively. Photoluminescence measurements at room temperature showed the violet emission band (centered at 3 eV) which was only detected in the ZnO film grown under pure argon. From thermally stimulated conductivity measurements two traps with 0.27 and 0.14 eV activation energies were identified for films grown in pure argon and argon-oxygen mixture, respectively. The trap at 0.27 eV is associated with a level located below the conduction band edge and it is supported by the PL band centered at 3 eV. Both types of ZnO films were used as the active channel layer in thin film transistors with thermal SiO2 as gate dielectric. Field effect mobility, threshold voltage and current ratio were improved in the devices with ZnO channel deposited with the argon-oxygen mixture (99% Ar/1% O2 vol.). Threshold voltage decreased from 25 V to 15 V, field effect mobility and current ratio increased from 0.8 to 2.4 cm2/Vs and from 102 to 106, in that order.

  15. Optoelectronic characterization of wide-bandgap (AgCu)(InGa)Se 2 thin-film polycrystalline solar cells including the role of the intrinsic zinc oxide layer

    NASA Astrophysics Data System (ADS)

    Obahiagbon, Uwadiae

    Experiments and simulations were conducted to vary the thickness and the sheet resistance of the high resistance (HR) ZnO layer in polycrystalline thin film (AgCu)(GaIn)Se2 (ACIGS) solar cells. The effect of varying these parameters on the electric field distribution, depletion width and hence capacitance were studied by SCAPS simulation. Devices were then fabricated and characterized by a number of optoelectronic techniques. Thin film CIGS has received a lot of attention, for its use as an absorber layer for thin film solar cells. However, the addition of Silver (Ag) to the CIGS alloy system increases the band gap as indicated from optical transmission measurements and thus higher open circuit voltage (Voc) could be obtained. Furthermore, addition of Ag lowers the melting temperature of the alloy and it is expected that this lowers the defect densities in the absorber and thus leads to higher performance. Transient photocapacitance analysis on ACIGS devices shows sharper band edge indicating lower disorder than CIGS. Presently there is a lack of fundamental knowledge relating film characteristics to device properties and performance. This is due to the fact that some features in the present solar cell structure have been optimized empirically. The goal of this research effort was to develop a fundamental and detailed understanding of the device operation as well as the loss mechanism(s) limiting these devices. Recombination mechanisms in finished ACIGS solar cell devices was studied using advanced admittance techniques (AS, DLCP, CV) to identify electronically active defect state(s) and to study their impact on electronic properties and device performance. Analysis of various optoelectronic measurements of ACIGS solar cells provided useful feedback regarding the impact on device performance of the HR ZnO layer. It was found that thickness between 10-100 nm had negligible impact on performance but reducing the thickness to 0 nm resulted in huge variability in all

  16. Optical properties of CdS{sub x}Te{sub 1{minus}x} polycrystalline thin films

    SciTech Connect

    Wood, D.A.; Lane, D.W.; Rogers, K.D.; Coath, J.A.

    1999-11-12

    Thin films of CdS{sub x}Te{sub 1{minus}x} (0 {le} x {le} 1) have been prepared by vacuum evaporation from solid solutions. Rutherford backscattering spectrometry has been used to determine the thickness of the films, which is in the range 8--50 nm, and x-ray diffraction analysis has been used to determine the phase. The refractive index and extinction coefficient of the films has been calculated from reflectance and transmittance measurements for the wavelength region 250--3,200 nm. Polynomial functions are given for each sample, which describe the variation in refractive index and extinction coefficient over the entire wavelength range. Least squares fitting to the absorption spectra revealed that the films all have a direct band gap, although photon energies required for indirect transitions have also been found. CdS{sub 0.8}Te{sub 0.2} is found to have the lowest absorption coefficient at energies greater than 2.1 eV.

  17. Polycrystalline semiconductor processing

    DOEpatents

    Glaeser, Andreas M.; Haggerty, John S.; Danforth, Stephen C.

    1983-01-01

    A process for forming large-grain polycrystalline films from amorphous films for use as photovoltaic devices. The process operates on the amorphous film and uses the driving force inherent to the transition from the amorphous state to the crystalline state as the force which drives the grain growth process. The resultant polycrystalline film is characterized by a grain size that is greater than the thickness of the film. A thin amorphous film is deposited on a substrate. The formation of a plurality of crystalline embryos is induced in the amorphous film at predetermined spaced apart locations and nucleation is inhibited elsewhere in the film. The crystalline embryos are caused to grow in the amorphous film, without further nucleation occurring in the film, until the growth of the embryos is halted by imgingement on adjacently growing embryos. The process is applicable to both batch and continuous processing techniques. In either type of process, the thin amorphous film is sequentially doped with p and n type dopants. Doping is effected either before or after the formation and growth of the crystalline embryos in the amorphous film, or during a continuously proceeding crystallization step.

  18. Polycrystalline semiconductor processing

    DOEpatents

    Glaeser, A.M.; Haggerty, J.S.; Danforth, S.C.

    1983-04-05

    A process is described for forming large-grain polycrystalline films from amorphous films for use as photovoltaic devices. The process operates on the amorphous film and uses the driving force inherent to the transition from the amorphous state to the crystalline state as the force which drives the grain growth process. The resultant polycrystalline film is characterized by a grain size that is greater than the thickness of the film. A thin amorphous film is deposited on a substrate. The formation of a plurality of crystalline embryos is induced in the amorphous film at predetermined spaced apart locations and nucleation is inhibited elsewhere in the film. The crystalline embryos are caused to grow in the amorphous film, without further nucleation occurring in the film, until the growth of the embryos is halted by impingement on adjacently growing embryos. The process is applicable to both batch and continuous processing techniques. In either type of process, the thin amorphous film is sequentially doped with p and n type dopants. Doping is effected either before or after the formation and growth of the crystalline embryos in the amorphous film, or during a continuously proceeding crystallization step. 10 figs.

  19. Self-consistent modelling of X-ray photoelectron spectra from air-exposed polycrystalline TiN thin films

    NASA Astrophysics Data System (ADS)

    Greczynski, G.; Hultman, L.

    2016-11-01

    We present first self-consistent modelling of x-ray photoelectron spectroscopy (XPS) Ti 2p, N 1s, O 1s, and C 1s core level spectra with a cross-peak quantitative agreement for a series of TiN thin films grown by dc magnetron sputtering and oxidized to different extent by varying the venting temperature Tv of the vacuum chamber before removing the deposited samples. So-obtained film series constitute a model case for XPS application studies, where certain degree of atmosphere exposure during sample transfer to the XPS instrument is unavoidable. The challenge is to extract information about surface chemistry without invoking destructive pre-cleaning with noble gas ions. All TiN surfaces are thus analyzed in the as-received state by XPS using monochromatic Al Kα radiation (hν = 1486.6 eV). Details of line shapes and relative peak areas obtained from deconvolution of the reference Ti 2p and N 1 s spectra representative of a native TiN surface serve as an input to model complex core level signals from air-exposed surfaces, where contributions from oxides and oxynitrides make the task very challenging considering the influence of the whole deposition process at hand. The essential part of the presented approach is that the deconvolution process is not only guided by the comparison to the reference binding energy values that often show large spread, but in order to increase reliability of the extracted chemical information the requirement for both qualitative and quantitative self-consistency between component peaks belonging to the same chemical species is imposed across all core-level spectra (including often neglected O 1s and C 1s signals). The relative ratios between contributions from different chemical species vary as a function of Tv presenting a self-consistency check for our model. We propose that the cross-peak self-consistency should be a prerequisite for reliable XPS peak modelling as it enhances credibility of obtained chemical information, while relying

  20. Pixel structures to compensate nonuniform threshold voltage and mobility of polycrystalline silicon thin-film transistors using subthreshold current for large-size active matrix organic light-emitting diode displays

    NASA Astrophysics Data System (ADS)

    Na, Jun-Seok; Kwon, Oh-Kyong

    2014-01-01

    We propose pixel structures for large-size and high-resolution active matrix organic light-emitting diode (AMOLED) displays using a polycrystalline silicon (poly-Si) thin-film transistor (TFT) backplane. The proposed pixel structures compensate the variations of the threshold voltage and mobility of the driving TFT using the subthreshold current. The simulated results show that the emission current error of the proposed pixel structure B ranges from -2.25 to 2.02 least significant bit (LSB) when the variations of the threshold voltage and mobility of the driving TFT are ±0.5 V and ±10%, respectively.

  1. Cobalt-free polycrystalline Ba0.95La0.05FeO3-δ thin films as cathodes for intermediate-temperature solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Chen, Dengjie; Chen, Chi; Dong, Feifei; Shao, Zongping; Ciucci, Francesco

    2014-03-01

    Ba0.95La0.05FeO3-δ (BLF) thin films as electrodes for intermediate-temperature solid oxide fuel cells are prepared on single-crystal yttria-stabilized zirconia (YSZ) substrates by pulsed laser deposition. The phase structure, surface morphology and roughness of the BLF thin films are characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. X-ray photoelectron spectroscopy is used to analyze the compositions of the deposited thin film and the chemical state of transition metal. The dense thin film exhibits a polycrystalline perovskite structure with a low surface roughness and a high oxygen vacancy concentration on the surface. Ag (paste or strip) and Au (strip) are applied on both surfaces of the symmetric cells as current collectors to evaluate electrochemical performance of the thin films. The electrode polarization resistances of the symmetric cells are found to be lower than those of most cobalt-free thin-film electrodes, e.g., 0.437 Ω cm2 at 700 °C and 0.21 atm. The oxygen reduction reaction mechanism of the BLF cathode in symmetric cells is studied by electrochemical impedance spectroscopy thanks to the equivalent fitting analysis. Both the oxygen surface exchange reaction and charge transfer are shown to determine the overall oxygen reduction reaction.

  2. Pixel-Level Digital-to-Analog Conversion Scheme for Compact Data Drivers of Active Matrix Organic Light-Emitting Diodes with Low-Temperature Polycrystalline Silicon Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Kim, Tae-Wook; Choi, Byong-Deok

    2010-03-01

    This paper shows that a part of a digital-to-analog conversion (DAC) function can be included in a pixel circuit to save the circuit area of an integrated data driver fabricated with low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). Because the pixel-level DAC can be constructed by two TFTs and one small capacitor, the pixel circuit does not become markedly complex. The design of an 8-bit DAC, which combines a 6-bit resistor-string-based DAC and a 2-bit pixel-level DAC for a 4-in. diagonal VGA format active matrix organic light-emitting diode (AMOLED), is shown in detail. In addition, analysis results are presented, revealing that the 8-bit DAC scheme including a 2-bit pixel-level DAC with 1:3 demultiplexing can be applied to very high video formats, such as XGA, for a 3 to 4-in. diagonal AMOLED. Even for a 9- to 12-in. diagonal AMOLED, the proposed scheme can still be applied to the XGA format, even though no demultiplexing is allowed. The total height of the proposed 8-bit DAC is approximately 960 µm, which is almost one-half of that of the previous 6-bit resistor-string-based DAC.

  3. Pixel-Level Digital-to-Analog Conversion Scheme for Compact Data Drivers of Active Matrix Organic Light-Emitting Diodes with Low-Temperature Polycrystalline Silicon Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Tae-Wook Kim,; Byong-Deok Choi,

    2010-03-01

    This paper shows that a part of a digital-to-analog conversion (DAC) function can be included in a pixel circuit to save the circuit area of an integrated data driver fabricated with low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). Because the pixel-level DAC can be constructed by two TFTs and one small capacitor, the pixel circuit does not become markedly complex. The design of an 8-bit DAC, which combines a 6-bit resistor-string-based DAC and a 2-bit pixel-level DAC for a 4-in. diagonal VGA format active matrix organic light-emitting diode (AMOLED), is shown in detail. In addition, analysis results are presented, revealing that the 8-bit DAC scheme including a 2-bit pixel-level DAC with 1:3 demultiplexing can be applied to very high video formats, such as XGA, for a 3 to 4-in. diagonal AMOLED. Even for a 9- to 12-in. diagonal AMOLED, the proposed scheme can still be applied to the XGA format, even though no demultiplexing is allowed. The total height of the proposed 8-bit DAC is approximately 960 μm, which is almost one-half of that of the previous 6-bit resistor-string-based DAC.

  4. Research on polycrystalline thin-film CuInGaSe{sub 2} solar cells. Annual subcontract report, 3 May 1991--21 May 1993

    SciTech Connect

    Chen, W.S.; Stewart, J.M.; Mickelsen, R.A.; Devaney, W.E.; Stanbery, B.J.

    1993-10-01

    This report describes work to fabricate high-efficiency CdZnS/CuInGaSe{sub 2}, thin-film solar cells and to develop improved transparent conductor window layers such as ZnO. The specific technical milestone for Phase I was to demonstrate an air mass (AM) 1.5 global 13% , 1-cm{sup 2} total-area CuInGaSe{sub 2} (CIGS) thin-film solar cell. For Phase II, the objective was to demonstrate an AM1.5 global 13.5%, 1-cm{sup 2} total-area efficiency. We focused our activities on three areas. First, we modified the CIGS deposition system to double its substrate capacity. Second, we developed new tooling to enable investigation of a modified aqueous CdZnS process in which the goal was to improve the yield of this critical step in the device fabrication process. Third, we upgraded the ZnO sputtering system to improve its reliability and reproducibility. A dual rotatable cathode metallic source was installed, and the sputtering parameters were further optimized to improve ZnO`s properties as a transparent conducting oxide (TCO). Combining the refined CdZnS process with CIGS from the newly fixtured deposition system enable us to fabricate and deliver a ZnO/Cd{sub 0.08}Zn{sub 0.20}S/CuIn{sub 0.74}Ga{sub 0.26}Se{sub 2} cell on alumina with I-V characteristics, as measured by NREL under standard test conditions, of 13.7% efficiency with V{proportional_to} = 0.5458 V, J{sub sc} = 35.48 mA/cm{sup 2}, FF = 0.688, and efficiency = 14.6%.

  5. Recrystallization of polycrystalline silicon

    NASA Technical Reports Server (NTRS)

    Lall, C.; Kulkarni, S. B.; Graham, C. D., Jr.; Pope, D. P.

    1981-01-01

    Optical metallography is used to investigate the recrystallization properties of polycrystalline semiconductor-grade silicon. It is found that polycrystalline silicon recrystallizes at 1380 C in relatively short times, provided that the prior deformation is greater than 30%. For a prior deformation of about 40%, the recrystallization process is essentially complete in about 30 minutes. Silicon recrystallizes at a substantially slower rate than metals at equivalent homologous temperatures. The recrystallized grain size is insensitive to the amount of prestrain for strains in the range of 10-50%.

  6. Substrate effect on excimer laser assisted crystal growth in phosphor Ca 0.997Pr 0.002TiO 3 polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Nakajima, Tomohiko; Tsuchiya, Tetsuo; Kumagai, Toshiya

    2007-12-01

    Ca 0.997Pr 0.002TiO 3 thin films that show strong red luminescence were successfully prepared by means of an excimer laser assisted metal organic deposition process with a KrF laser at a fluence of 100 mJ/cm 2 at 100 °C. The CPTO films grew on the silica, borosilicate, and indium-tin-oxide coated glasses. The crystallinity of the Ca 0.997Pr 0.002TiO 3 films depended on the substrates; the borosilicate and indium-tin-oxide coated glasses with a large optical absorption of a KrF laser ( λ = 248 nm) were effective for the crystallization for the Ca 0.997Pr 0.002TiO 3. In addition, a high thermal conductivity of the indium-tin-oxide coated glass substrate could also improve the crystallinity due to an enhancement of thermal propagation to the film. Oxygen annealing at 500 °C for 6 h successfully eliminated the oxygen vacancy produced by the laser irradiation, and also remarkably improved the PL emission intensity. Thus, we have shown that substrate properties such as an optical absorbance and a thermal conductivity were quite important factors for the crystal growth and the PL emission for the Ca 0.997Pr 0.002TiO 3 in the excimer laser assisted metal organic deposition process.

  7. Research on polycrystalline thin-film submodules based on CuInSe{sub 2} materials. Final subcontract report, 11 November 1990--30 June 1995

    SciTech Connect

    Arya, R; Fogleboch, J; Kessler, J; Russell, L; Skibo, S; Wiedeman, S

    1996-01-01

    This report describes work performed in development of CIS-based photovoltaic (PV) products. The activity began with developing manufacturable deposition methods for all required thin-film layers and developing and understanding processes using those methods. It included demonstrating the potential for high conversion efficiency and followed with developing viable methods for module segment formation and interconnection. These process steps were integrated to fabricate monolithic CIS-based submodules. An important result of this program is the basis of understanding established in developing this material for PV applications, which is necessary to address issues of manufacturability and cost-which were recognized early in the program as being determined by successful solutions to issues of yield, reproducibility, and control as much as by material and energy costs, conversion efficiency, and process speed. Solarex identified at least one absorber formation process that is very robust to shunt formation from pinholes or point defects, tolerant of variation in processing temperature and elemental composition, and is capable of producing high conversion efficiency. This program also allowed development and scale-up of processes for the deposition of all other substrate, heterojunction buffer, and window layers and associated scribing/module formation operations to 1000-CM{sup 2} size. At the completion of this program, Solarex has in place most of the necessary elements to begin the transition to pilot operation of CIS manufacturing activities.

  8. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual subcontract report, 20 March 1992--19 March 1993

    SciTech Connect

    Trefny, J.U.; Furtak, T.E.; Wada, N.; Williamson, D.L.; Kim, D.

    1993-08-01

    This report describes progress during the first year of a 3-year program at Colorado School of Mines, based upon earlier studies performed by Ametek Corporation, to develop specific layers of the Ametek n-i-p structure as well as additional studies of several transparent conducting oxides. Thin films of ZnO and ZnO:Al were deposited under various conditions. For the n-layer of the Ametek structure, a dip-coating method was developed for the deposition of CdS films. The authors also present data on the characterization of these films by X-ray diffraction, Raman spectroscopy, scanning tunneling microscopy, small-angle X-ray scattering, and other techniques. They made progress in the electrodeposition of the CdTe i-layer of the Ametek structure. They developed appropriate electrochemical baths and are beginning to understand the role of the many experimental parameters that must be controlled to obtain high-quality films of this material. They explored the possibility of using an electrochemical process for fabricating the ZnTe p-layer. Some preliminary success was achieved, and this step will be pursued in the next phase. Finally, they fabricated a number of ``dot`` solar cells with the structure glass/SnO{sub 2}/CdS/CdTe/Au. Several cells with efficiencies in the range of 5%-6% were obtained, and they are confident, given recent progress, that cells with efficiencies in excess of 10% will be achieved in the near future.

  9. MIS and SIS solar cells on polycrystalline silicon

    SciTech Connect

    Cheek, G.; Mertens, R.

    1980-02-01

    MIS and SIS structured solar cells are receiving much attention in the photovoltaic community. Seemingly, these cells could be a viable alternative to thermally diffused p-n junctions for use on thin-film polycrystalline silicon substrates. This review describes MIS/SIS structured solar cells and the possible advantages of these structures for use with thin-film polycrystalline silicon. The results of efficiency calculations are presented. Also addressed are lifetime stability and fabrication techniques amenable to large scale production. Finally, the relative advantages and disadvantages of these cells and the results obtained are presented.

  10. Thin-film polycrystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Ghosh, A. K.; Feng, T.; Eustace, D. J.; Maruska, H. P.

    1981-07-01

    The highest efficiencies achieved with single crystals are 14.1% for ITO/n-SI and 13.3% of SnO2/n-Si, while the corresponding values for polysilicon are 11.2% and 10.1%. For large area single crystal devices the efficiency values are 11.7% and 11.2% for ITO and SnO2 cells, respectively, while for polysilicon the corresponding values are 9.82% and 8.55%. The lower efficiency for large area devices is mainly due to lower J sub sc and FF. Results are presented to show the optimum grid spacing required. From stability studies it is shown that there are two distinct mechanisms for degradation, one optical and the other thermal. The optical degradation could be eliminated if the cells could be protected from uv light and the thermal degradation can be prevented if the cells are operated below 100 C.

  11. Gelcasting Polycrystalline Alumina

    SciTech Connect

    Janney, M.A.; Zuk, K.J.; Wei, G.C.

    2000-01-01

    OSRAM SYLVANIA INC. is a major U.S. manufacturer of high-intensity lighting. Among its products is the Lumalux TM line of high-pressure sodium vapor arc lamps, which are used for industrial, highway, and street lighting. The key to the performance of these lamps is the polycrystalline alumina (PCA) tube that is used to contain the plasma that is formed in the electric arc. That plasma consists of ionized sodium, mercury, and xenon vapors. The key attributes of the PCA tubes are their transparency ({approximately}97% total transmittance in the visible), their refractoriness (inner wall temperature can reach l2OOC), and their chemical resistance (sodium and mercury vapor are extremely corrosive). The current efficiency of the lamps is very high, up to 100 initial lumens per watt. (Compare incandescent lamps 10-20 lumens per watt, fluorescent lamps 25-90 lumens per watt.)

  12. Development of sensors on the basis of polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    Obermeier, E.; Vonkienlin, F.; Hwang, H. J.

    1985-07-01

    Properties of polycrystalline silicon layers that are important for sensor applications were investigated. Layers were deposited from the gaseous phase through atmospheric pressure and low pressure chemical vaccuum deposition onto thermally oxidized single crystalline silicon wasfers; doping was carried out by ion implantation. Electrical properties, temperature behavior, and strain sensitivity were investigated. It is found that the temperature coefficients of polysilicon resistors can be determined within broad limits (negative, positive, zero) through selection of the doping. The layers are characterized by a relatively high piezoresistive effect. Based on experimental results, polysilicon thin film sensors (temperature, pressure, flow) were developed. These sensors clearly demonstrate the advantages of polycrystalline silicon layers as a sensor material.

  13. Gelcasting polycrystalline alumina

    SciTech Connect

    Janney, M.A.

    1997-04-01

    This work is being done as part of a CRADA with Osram-Sylvania, Inc. (OSI) OSI is a major U.S. manufacturer of high-intensity lighting. Among its products is the Lumalux{reg_sign} line of high-pressure sodium vapor arc lamps, which are used for industrial, highway, and street lighting. The key to the performance of these lamps is the polycrystalline alumina (PCA) tube that is used to contain the plasma that is formed in the electric arc. That plasma consists of ionized sodium, mercury, and xenon vapors. The key attributes of the PCA tubes are their transparency (95% total transmittance in the visible region), their refractoriness (inner wall temperature can reach 1400{degrees}C), and their chemical resistance (sodium and mercury vapor are extremely corrosive). The current efficiency of the lamps is very high, on the order of several hundred lumens / watt. (Compare - incandescent lamps -13 lumens/watt fluorescent lamps -30 lumens/watt.) Osram-Sylvania would like to explore using gelcasting to form PCA tubes for Lumalux{reg_sign} lamps, and eventually for metal halide lamps (known as quartz-halogen lamps). Osram-Sylvania, Inc. currently manufactures PCA tubes by isostatic pressing. This process works well for the shapes that they presently use. However, there are several types of tubes that are either difficult or impossible to make by isostatic pressing. It is the desire to make these new shapes and sizes of tubes that has prompted Osram-Sylvania`s interest in gelcasting. The purpose of the CRADA is to determine the feasibility of making PCA items having sufficient optical quality that they are useful in lighting applications using gelcasting.

  14. Polycrystalline Silicon ISFETs on Glass Substrate

    PubMed Central

    Yan, Feng; Estrela, Pedro; Mo, Yang; Migliorato, Piero; Maeda, Hiroshi

    2005-01-01

    The Ion Sensitive Field Effect Transistor (ISFET) operation based on polycrystalline silicon thin film transistors is reported. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with PE-CVD Si3N4 deposited on top of a conductor, which also provides the electrical connection to the remote TFT gate. Nearly ideal pH sensitivity (54 mV/pH) and stable operation have been achieved. Temperature effects have also been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The shift increases almost linearly upon the increase of penicillin concentration until saturation is reached for ∼ 7 mM. Poly-Si TFT structures with a gold sensing area have been also successfully applied to field-effect detection of DNA.

  15. Preparation of polycrystalline Bi3Fe5O12 garnet films

    NASA Astrophysics Data System (ADS)

    Okuda, T.; Katayama, T.; Satoh, K.; Yamamoto, H.

    1991-04-01

    Polycrystalline films of nonthermodynamical garnet Bi3Fe5O12 were synthesized by direct epitaxial growth from the vapor phase. Polycrystalline thin layers of various kinds of thermodynamical garnets prepared on fused quartz substrates were employed as the substrate materials. The saturation magnetization of the film grown onto the polycrystalline GGG layer was 140 mT at 5 K. The films showed quite large magneto-optical effects. In the film on the GGG layer, the Faraday rotation angle at a wavelength of 633 nm was -5.5 deg/μm and the magneto-optical Kerr rotation angle at 455 nm was -0.9°.

  16. Physics of grain boundaries in polycrystalline photovoltaic semiconductors

    NASA Astrophysics Data System (ADS)

    Yan, Yanfa; Yin, Wan-Jian; Wu, Yelong; Shi, Tingting; Paudel, Naba R.; Li, Chen; Poplawsky, Jonathan; Wang, Zhiwei; Moseley, John; Guthrey, Harvey; Moutinho, Helio; Pennycook, Stephen J.; Al-Jassim, Mowafak M.

    2015-03-01

    Thin-film solar cells based on polycrystalline Cu(In,Ga)Se2 (CIGS) and CdTe photovoltaic semiconductors have reached remarkable laboratory efficiencies. It is surprising that these thin-film polycrystalline solar cells can reach such high efficiencies despite containing a high density of grain boundaries (GBs), which would seem likely to be nonradiative recombination centers for photo-generated carriers. In this paper, we review our atomistic theoretical understanding of the physics of grain boundaries in CIGS and CdTe absorbers. We show that intrinsic GBs with dislocation cores exhibit deep gap states in both CIGS and CdTe. However, in each solar cell device, the GBs can be chemically modified to improve their photovoltaic properties. In CIGS cells, GBs are found to be Cu-rich and contain O impurities. Density-functional theory calculations reveal that such chemical changes within GBs can remove most of the unwanted gap states. In CdTe cells, GBs are found to contain a high concentration of Cl atoms. Cl atoms donate electrons, creating n-type GBs between p-type CdTe grains, forming local p-n-p junctions along GBs. This leads to enhanced current collections. Therefore, chemical modification of GBs allows for high efficiency polycrystalline CIGS and CdTe thin-film solar cells.

  17. Crystal structure analysis in solution-processed uniaxially oriented polycrystalline thin film of non-peripheral octahexyl phthalocyanine by grazing incidence wide-angle x-ray scattering techniques

    NASA Astrophysics Data System (ADS)

    Ohmori, Masashi; Uno, Takashi; Nakatani, Mitsuhiro; Nakano, Chika; Fujii, Akihiko; Ozaki, Masanori

    2016-10-01

    Uniaxially oriented thin films of metal-free non-peripherally octahexyl-substituted phthalocyanine (C6PcH2), which exhibits high carrier mobility, have been fabricated by the bar-coating technique, which is a simple solution process. The molecular orientation and molecular steps in the thin film were observed by the polarized spectroscopy and the atomic force microscopy, respectively. The three-dimensional molecular packing structure in the thin film was investigated by the grazing incidence wide-angle X-ray scattering technique with an in-plane sample rotation. The crystal orientation was clarified, and the three-dimensional molecular packing structure of the thin film was found to match the single crystal structure. Moreover, the X-ray diffraction patterns of the oriented thin films were simulated by using the lattice parameters of C6PcH2 single crystal to reproduce the observed X-ray diffraction patterns.

  18. Anomalous photoelectric effect of a polycrystalline topological insulator film.

    PubMed

    Zhang, Hongbin; Yao, Jiandong; Shao, Jianmei; Li, Hai; Li, Shuwei; Bao, Dinghua; Wang, Chengxin; Yang, Guowei

    2014-07-29

    A topological insulator represents a new state of quantum matter that possesses an insulating bulk band gap as well as a spin-momentum-locked Dirac cone on the surface that is protected by time-reversal symmetry. Photon-dressed surface states and light-induced surface photocurrents have been observed in topological insulators. Here, we report experimental observations of an anomalous photoelectric effect in thin films of Bi2Te3, a polycrystalline topological insulator. Under illumination with non-polarised light, transport measurements reveal that the resistance of the topological surface states suddenly increases when the polycrystalline film is illuminated. The resistance variation is positively dependent on the light intensity but has no relation to the applied electric field; this finding can be attributed to the gap opening of the surface Dirac cone. This observation of an anomalous photoelectric effect in polycrystalline topological insulators offers exciting opportunities for the creation of photodetectors with an unusually broad spectral range. Moreover, polycrystalline topological insulator films provide an attractive material platform for exploring the nature and practical application of topological insulators.

  19. Plastic flow of polycrystalline materials

    NASA Astrophysics Data System (ADS)

    Langer, James

    Leo Kadanoff had a long interest in fluid flows, especially fingering instabilities. This interest was one example of his insatiable curiosity about simple, fundamentally important, and often multidisciplinary phenomena. Here is an example of another class of such phenomena that I had hoped to show him this year. The experts in polycrystalline solid mechanics have insisted for decades that their central problem - dislocation-mediated strain hardening - is intrinsically unsolvable. I think they're wrong. My colleagues and I have made progress recently in theories of both amorphous and polycrystalline plasticity by introducing an effective disorder temperature as a dynamical variable in our equations of motion. In this way, we have been able to describe how the densities of flow defects or dislocations evolve in response to external forcing, and thus to develop theories that promise to become as predictive, and full of surprises, as the laws of fluid flow. For Kadanoff session.

  20. Orientation-distribution mapping of polycrystalline materials by Raman microspectroscopy

    PubMed Central

    Schmid, T.; Schäfer, N.; Levcenko, S.; Rissom, T.; Abou-Ras, D.

    2015-01-01

    Raman microspectroscopy provides the means to obtain local orientations on polycrystalline materials at the submicrometer level. The present work demonstrates how orientation-distribution maps composed of Raman intensity distributions can be acquired on large areas of several hundreds of square micrometers. A polycrystalline CuInSe2 thin film was used as a model system. The orientation distributions are evidenced by corresponding measurements using electron backscatter diffraction (EBSD) on the same identical specimen positions. The quantitative, local orientation information obtained by means of EBSD was used to calculate the theoretical Raman intensities for specific grain orientations, which agree well with the experimental values. The presented approach establishes new horizons for Raman microspectroscopy as a tool for quantitative, microstructural analysis at submicrometer resolution. PMID:26673970

  1. Polycrystalline diamond photoconductive device with high UV-visible discrimination

    NASA Astrophysics Data System (ADS)

    McKeag, Robert D.; Chan, Simon S. M.; Jackman, Richard B.

    1995-10-01

    Planar metal-diamond-metal photoconductive devices have been fabricated from free standing large grain (20-30 μm) polycrystalline thin film diamond. An interdigitated electrode design with spacings of 20 μm was used to produce effective UV photodetecting devices at bias values in the range 0.1-10 V. A methane-air treatment has been used to modify the structures such that unprecedented performance characteristics have been recorded (106 higher response to 200 nm than visible wavelengths, <0.1 nA dark currents); spectral features similar to those observed in natural diamond crystals have been observed indicating that the treatment used led to near ideal electronic characteristics from polycrystalline material.

  2. Measuring long-range carrier diffusion across multiple grains in polycrystalline semiconductors by photoluminescence imaging

    PubMed Central

    Alberi, K.; Fluegel, B.; Moutinho, H.; Dhere, R. G.; Li, J. V.; Mascarenhas, A.

    2013-01-01

    Thin-film polycrystalline semiconductors are currently at the forefront of inexpensive large-area solar cell and integrated circuit technologies because of their reduced processing and substrate selection constraints. Understanding the extent to which structural and electronic defects influence carrier transport in these materials is critical to controlling the optoelectronic properties, yet many measurement techniques are only capable of indirectly probing their effects. Here we apply a novel photoluminescence imaging technique to directly observe the low temperature diffusion of photocarriers through and across defect states in polycrystalline CdTe thin films. Our measurements show that an inhomogeneous distribution of localized defect states mediates long-range hole transport across multiple grain boundaries to locations exceeding 10 μm from the point of photogeneration. These results provide new insight into the key role deep trap states have in low temperature carrier transport in polycrystalline CdTe by revealing their propensity to act as networks for hopping conduction. PMID:24158163

  3. Process Research On Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wohlgemuth, J. H.

    1982-01-01

    Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.

  4. Low temperature production of large-grain polycrystalline semiconductors

    DOEpatents

    Naseem, Hameed A.; Albarghouti, Marwan

    2007-04-10

    An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

  5. Allylamine-mediated DNA attachment to polycrystalline diamond surface

    NASA Astrophysics Data System (ADS)

    Zhuang, H.; Srikanth, Vadali. V. S. S.; Jiang, X.; Luo, J.; Ihmels, H.; Aronov, I.; Wenclawiak, B. W.; Adlung, M.; Wickleder, C.

    2009-10-01

    Allylamine, an unsaturated short carbon chain amine was used to mediate ss-DNA attachment to an H-terminated polycrystalline diamond thin film surface for biosensoric applications. At first, allylamine was photochemically tethered onto the diamond film surface; ss-DNA was then attached via the allylamine linkage. The DNA molecules are then hybridized with the complementary DNA molecules containing fluorescence labels followed by denaturing. Time-of-fight secondary ion mass spectrometry and fluorescence spectroscopy are used to confirm the allylamine bonding and the covalent DNA bonding to the diamond film surface, respectively.

  6. Thin-Film Photovoltaics: Status and Applications to Space Power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

  7. Applications of thin-film photovoltaics for space

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The authors discuss the potential applications of thin-film polycrystalline and amorphous cells for space. There have been great advances in thin-film solar cells for terrestrial applications. Transfer of this technology to space applications could result in ultra low-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper indium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon arrays. The possibility of using thin-film multi-bandgap cascade solar cells is discussed.

  8. Casting larger polycrystalline silicon ingots

    SciTech Connect

    Wohlgemuth, J.; Tomlinson, T.; Cliber, J.; Shea, S.; Narayanan, M.

    1995-08-01

    Solarex has developed and patented a directional solidification casting process specifically designed for photovoltaics. In this process, silicon feedstock is melted in a ceramic crucible and solidified into a large grained semicrystalline silicon ingot. In-house manufacture of low cost, high purity ceramics is a key to the low cost fabrication of Solarex polycrystalline wafers. The casting process is performed in Solarex designed casting stations. The casting operation is computer controlled. There are no moving parts (except for the loading and unloading) so the growth process proceeds with virtually no operator intervention Today Solarex casting stations are used to produce ingots from which 4 bricks, each 11.4 cm by 11.4 cm in cross section, are cut. The stations themselves are physically capable of holding larger ingots, that would yield either: 4 bricks, 15 cm by 15 an; or 9 bricks, 11.4 cm by 11.4 an in cross-section. One of the tasks in the Solarex Cast Polycrystalline Silicon PVMaT Program is to design and modify one of the castings stations to cast these larger ingots. If successful, this effort will increase the production capacity of Solarex`s casting stations by 73% and reduce the labor content for casting by an equivalent percentage.

  9. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wrigley, C. Y.

    1985-01-01

    Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

  10. Interface scattering in polycrystalline thermoelectrics

    SciTech Connect

    Popescu, Adrian; Haney, Paul M.

    2014-03-28

    We study the effect of electron and phonon interface scattering on the thermoelectric properties of disordered, polycrystalline materials (with grain sizes larger than electron and phonons' mean free path). Interface scattering of electrons is treated with a Landauer approach, while that of phonons is treated with the diffuse mismatch model. The interface scattering is embedded within a diffusive model of bulk transport, and we show that, for randomly arranged interfaces, the overall system is well described by effective medium theory. Using bulk parameters similar to those of PbTe and a square barrier potential for the interface electron scattering, we identify the interface scattering parameters for which the figure of merit ZT is increased. We find the electronic scattering is generally detrimental due to a reduction in electrical conductivity; however, for sufficiently weak electronic interface scattering, ZT is enhanced due to phonon interface scattering.

  11. Polycrystalline Silicon: a Biocompatibility Assay

    SciTech Connect

    Pecheva, E.; Fingarova, D.; Pramatarova, L.; Hikov, T.; Laquerriere, P.; Bouthors, Sylvie; Dimova-Malinovska, D.; Montgomery, P.

    2010-01-21

    Polycrystalline silicon (poly-Si) layers were functionalized through the growth of biomimetic hydroxyapatite (HA) on their surface. HA is the mineral component of bones and teeth and thus possesses excellent bioactivity and biocompatibility. MG-63 osteoblast-like cells were cultured on both HA-coated and un-coated poly-Si surfaces for 1, 3, 5 and 7 days and toxicity, proliferation and cell morphology were investigated. The results revealed that the poly-Si layers were bioactive and compatible with the osteoblast-like cells. Nevertheless, the HA coating improved the cell interactions with the poly-Si surfaces based on the cell affinity to the specific chemical composition of the bone-like HA and/or to the higher HA roughness.

  12. Defect engineering by ultrasound treatment in polycrystalline silicon

    SciTech Connect

    Ostapenko, S.; Jastrzebski, L.

    1995-08-01

    By applying ultrasound treatment (UST) to bulk and thin film polycrystalline Si (poly-Si) we have found a dramatic improvement of recombination and transport properties. The increasing of minority carrier lifetime by as much as one order of magnitude was found in short diffusion length regions, while exhibiting a strong dispersion for entire solar-grade poly-Si wafer. Relevant mechanisms are attributed to ultrasound processing on crystallographic defects, as well as UST stimulated dissociation of Fe-B pairs followed by Fe{sub i} gettering. A spectacular improvement of hydrogenation efficiency in poly-Si thin-films on glass substrate is demonstrated by resistivity study and confirmed using spatially resolved photoluminescence and nanoscale contact potential difference mapping. By applying UST to commercial solar cells we found the increasing of cell efficiency at low light excitation.

  13. Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells; Annual subcontract report, 1 March 1992--28 February 1993

    SciTech Connect

    Gray, J.L.; Schwartz, R.J.; Lee, Y.J.

    1994-03-01

    Solar cells operate by converting the radiation power from sun light into electrical power through photon absorption by semiconductor materials. The elemental and compound material systems widely used in photovoltaic applications can be produced in a variety of crystalline and non-crystalline forms. Although the crystalline group of materials have exhibited high conversion efficiencies, their production cost are substantially high. Several candidates in the poly- and micro-crystalline family of materials have recently gained much attention due to their potential for low cost manufacturability, stability, reliability and good performance. Among those materials, CuInSe{sub 2} and CdTe are considered to be the best choices for production of thin film solar cells because of the good optical properties and almost ideal band gap energies. Considerable progress was made with respect to cell performance and low cost manufacturing processes. Recently conversion efficiencies of 14.1 and 14.6% have been reported for CuInSe{sub 2} and CdTe based solar cells respectively. Even though the efficiencies of these cells continue to improve, they are not fully understood materials and there lies an uncertainty in their electrical properties and possible attainable performances. The best way to understand the details of current transport mechanisms and recombinations is to model the solar cells numerically. By numerical modeling, the processes which limit the cell performance can be sought and therefore, the most desirable designs for solar cells utilizing these materials as absorbers can be predicted. The problems with numerically modeling CuInSe{sub 2} and CdTe solar cells are that reported values of the pertinent material parameters vary over a wide range, and some quantities such as carrier concentration are not explicitly controlled.

  14. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1983-01-01

    The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

  15. Composite polycrystalline semiconductor neutron detectors

    NASA Astrophysics Data System (ADS)

    Schieber, M.; Zuck, A.; Marom, G.; Khakhan, O.; Roth, M.; Alfassi, Z. B.

    2007-08-01

    Composite polycrystalline semiconductor detectors bound with different binders, both inorganic molten glasses, such as B 2O 3, PbO/B 2O 3, Bi 2O 3/PbO, and organic polymeric binders, such as isotactic polypropylene (iPP), polystyrene or nylon-6, and coated with different metal electrodes were tested at room temperature for α-particles and very weak thermal neutron sources. The detector materials tested were natural occurring hexagonal BN and cubic LiF, where both are not containing enriched isotopes of 10B or 6Li. The radiation sources were 5.5 MeV α's from 241Am, 5.3 MeV from 210Po and also 4.8 MeV from 226Ra. Some of these detectors were also tested with thermal neutrons from very weak 227Ac 9Be, 241Am- 10Be sources and also from a weak 238Pu+ 9Be and somewhat stronger 252Cf sources. The neutrons were thermalized with paraffin. Despite very low signal to noise ratio of only ˜2, the neutrons could be counted by subtracting the noise from the signal.

  16. The electrical conduction properties of poly-crystalline indium-zinc-oxide film

    SciTech Connect

    Tomai, S.; Terai, K.; Junke, T.; Tsuruma, Y.; Ebata, K.; Yano, K.; Uraoka, Y.

    2014-02-28

    We have developed a high-mobility and high-uniform oxide semiconductor using poly-crystalline semiconductor material composed of indium and zinc (p-IZO). A typical conduction mechanism of p-IZO film was demonstrated by the grain boundary scattering model as in polycrystalline silicon. The grain boundary potential of the 2-h-annealed IZO film was calculated to be 100 meV, which was comparable to that of the polycrystalline silicon. However, the p-IZO thin film transistor (TFT) measurement shows rather uniform characteristics. It denotes that the mobility deterioration around the grain boundaries is lower than the case for low-temperature polycrystalline silicon. This assertion was made based on the difference of the mobility between the polycrystalline and amorphous IZO film being much smaller than is the case for silicon transistors. Therefore, we conclude that the p-IZO is a promising material for a TFT channel, which realizes high drift mobility and uniformity simultaneously.

  17. Hydrogen migration in polycrystalline silicon

    SciTech Connect

    Nickel, N.H.; Jackson, W.B.; Walker, J.

    1996-03-01

    Hydrogen migration in solid-state crystallized and low-pressure chemical-vapor-deposited (LPCVD) polycrystalline silicon (poly-Si) was investigated by deuterium diffusion experiments. The concentration profiles of deuterium, introduced into the poly-Si samples either from a remote D plasma or from a deuterated amorphous-silicon layer, were measured as a function of time and temperature. At high deuterium concentrations the diffusion was dispersive depending on exposure time. The dispersion is consistent with multiple trapping within a distribution of hopping barriers. The data can be explained by a two-level model used to explain diffusion in hydrogenated amorphous silicon. The energy difference between the transport level and the deuterium chemical potential was found to be about 1.2{endash}1.3 eV. The shallow levels for hydrogen trapping are about 0.5 eV below the transport level, while the deep levels are about 1.5{endash}1.7 eV below. The hydrogen chemical potential {mu}{sub H} decreases as the temperature increases. At lower concentrations, {mu}{sub H} was found to depend markedly on the method used to prepare the poly-Si, a result due in part to the dependence of crystallite size on the deposition process. Clear evidence for deuterium deep traps was found only in the solid-state crystallized material. The LPCVD-grown poly-Si, with columnar grains extending through the film thickness, displayed little evidence of deep trapping, and exhibited enhanced D diffusion. Many concentration profiles in the columnar LPCVD material indicated complex diffusion behavior, perhaps reflecting spatial variations of trap densities, complex formation, and/or multiple transport paths. Many aspects of the diffusion in poly-Si are consistent with diffusion data obtained in amorphous silicon. {copyright} {ital 1996 The American Physical Society.}

  18. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition

    NASA Astrophysics Data System (ADS)

    Trefny, J. U.; Furtak, T. E.; Williamson, D. L.; Kim, D.

    1994-07-01

    This report describes the principal results of work performed during the second year of a 3-year program at the Colorado School of Mines (CSM). The work on transparent conducting oxides was carried out primarily by CSM students at NREL and is described in three publications listed in Appendix C. The high-quality ZnO produced from the work was incorporated into a copper indium diselenide cell that exhibited a world-record efficiency of 16.4%. Much of the time was devoted to the improvement of cadmium sulfide films deposited by chemical bath deposition methods and annealed with or without a cadmium chloride treatment. Progress was also made in the electrochemical deposition of cadmium telluride. High-quality films yielding CdS/CdTe/Au cells of greater than 10% efficiency are now being produced on a regular basis. We explored the use of zinc telluride back contacts to form an n-i-p cell structure as previously used by Ametek. We began small-angle x-ray scattering (SAXS) studies to characterize crystal structures, residual stresses, and microstructures of both CdTe and CdS. Large SAXS signals were observed in CdS, most likely because of scattering from gain boundaries. The signals observed to date from CdTe are much weaker, indicating a more homogeneous microstructure. We began to use the ADEPT modeling program, developed at Purdue University, to guide our understanding of the CdS/CdTe cell physics and the improvements that will most likely lead to significantly enhanced efficiencies.

  19. The electrical conductivity of polycrystalline metallic films

    NASA Astrophysics Data System (ADS)

    Moraga, Luis; Arenas, Claudio; Henriquez, Ricardo; Bravo, Sergio; Solis, Basilio

    2016-10-01

    We calculate the electrical conductivity of polycrystalline metallic films by means of a semi-numerical procedure that provides solutions of the Boltzmann transport equation, that are essentially exact, by summing over classical trajectories according to Chambers' method. Following Mayadas and Shatzkes (MS), grain boundaries are modeled as an array of parallel plane barriers situated perpendicularly to the direction of the current. Alternatively, according to Szczyrbowski and Schmalzbauer (SS), the model consists in a triple array of these barriers in mutual perpendicular directions. The effects of surface roughness are described by means of Fuchs' specularity parameters. Following SS, the scattering properties of grain boundaries are taken into account by means of another specularity parameter and a probability of coherent passage. The difference between the sum of these and one is the probability of diffuse scattering. When this formalism is compared with the approximate formula of Mayadas and Shatzkes (Phys. Rev. B 1, 103 (1986)) it is shown that the latter greatly overestimates the film resistivity over most values of the reflectivity of the grain boundaries. The dependence of the conductivity of thin films on the probability of coherent passage and grain diameters is examined. In accordance with MS we find that the effects of disorder in the distribution of grain diameters is quite small. Moreover, we find that it is not safe to neglect the effects of the scattering by the additional interfaces created by stacked grains. However, when compared with recent resitivity-thickness data, it is shown that all three formalisms can provide accurate fits to experiment. In addition, it is shown that, depending on the respective reflectivities and distance from a surface, some of these interfaces may increase or diminish considerably the conductivity of the sample. As an illustration of this effect, we show a tentative fit of resistivity data of gold films measured by

  20. Nanoscale retention-loss dynamics of polycrystalline PbTiO{sub 3} nanotubes.

    SciTech Connect

    Choi, H.; Kim, Y.; Hong, S.; Sung, T.-H.; Shin, H.; No, K.

    2011-07-01

    We observed the nanoscale retention dynamics of polycrystalline PbTiO{sub 3} nanotubes using piezoresponse force microscopy. We found that the retention loss of the nanodot domains on the nanotubes showed the stretched exponential relaxation behaviors with stretched exponential factor n being less than 1 (0.523 and 0.692), which are similar to the thin films. In addition, the nanodot domains showed a diverse relaxation time constant {tau} due to different remnant polarization of each dot domains.

  1. Spectroscopic characterization of charged defects in polycrystalline pentacene by time- and wavelength-resolved electric force microscopy.

    PubMed

    Luria, Justin L; Schwarz, Kathleen A; Jaquith, Michael J; Hennig, Richard G; Marohn, John A

    2011-02-01

    Spatial maps of topography and trapped charge are acquired for polycrystalline pentacene thin-film transistors using electric and atomic force microscopy. In regions of trapped charge, the rate of trap clearing is studied as a function of the wavelength of incident radiation.

  2. Grain boundaries and surfaces in polycrystalline photovoltaics

    NASA Astrophysics Data System (ADS)

    Haney, Paul; Yoon, Heayoung; Zhitenev, Nikolai

    Despite the fact that polycrystalline photovoltaics materials such as CdTe and CIGS are an established commercial technology, the precise role of grain boundaries in their performance remains poorly understood. The high defect density at grain boundaries is generally detrimental to carrier lifetime, however the electric fields surrounding charged grain boundaries may separate electrons and holes, effectively passivating the grain boundary. One difficulty in ascertaining the properties of grain boundaries is that high spatial resolution experimental techniques needed to probe individual grain boundaries are generally surface sensitive. For this reason, extracting quantitative grain boundary and other material properties from this data requires a quantitatively accurate model of the exposed surface. Motivated by these considerations, we present a theoretical analysis of the response of a polycrystalline semiconductor to a localized excitation near a grain boundary, and near the surface. We use our analytical results to interpret electron beam induced current (EBIC) data on polycrystalline CdTe solar cells.

  3. Process Research of Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1984-01-01

    A passivation process (hydrogenation) that will improve the power generation of solar cells fabricated from presently produced, large grain, cast polycrystalline silicon (Semix), a potentially low cost material are developed. The first objective is to verify the operation of a DC plasma hydrogenation system and to investigate the effect of hydrogen on the electrical performance of a variety of polycrystalline silicon solar cells. The second objective is to parameterize and optimize a hydrogenation process for cast polycrystalline silicon, and will include a process sensitivity analysis. The sample preparation for the first phase is outlined. The hydrogenation system is described, and some early results that were obtained using the hydrogenation system without a plasma are summarized. Light beam induced current (LBIC) measurements of minicell samples, and their correlation to dark current voltage characteristics, are discussed.

  4. Process Research On Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Wohlgemuth, J. H.; Culik, J. S.

    1982-01-01

    The mechanisms limiting performance in polycrystalline silicon was determined. The initial set of experiments in this task entails the fabrication of cells of various thicknesses for four different bulk resistivities between 0.1 and 10 omega-cm. The results for the first two lots are presented.

  5. Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby

    DOEpatents

    Gonzalez, Franklin N.; Neugroschel, Arnost

    1984-02-14

    A new solar cell structure is provided which will increase the efficiency of polycrystalline solar cells by suppressing or completely eliminating the recombination losses due to the presence of grain boundaries. This is achieved by avoiding the formation of the p-n junction (or other types of junctions) in the grain boundaries and by eliminating the grain boundaries from the active area of the cell. This basic concept can be applied to any polycrystalline material; however, it will be most beneficial for cost-effective materials having small grains, including thin film materials.

  6. Stochastic multiscale modeling of polycrystalline materials

    NASA Astrophysics Data System (ADS)

    Wen, Bin

    Mechanical properties of engineering materials are sensitive to the underlying random microstructure. Quantification of mechanical property variability induced by microstructure variation is essential for the prediction of extreme properties and microstructure-sensitive design of materials. Recent advances in high throughput characterization of polycrystalline microstructures have resulted in huge data sets of microstructural descriptors and image snapshots. To utilize these large scale experimental data for computing the resulting variability of macroscopic properties, appropriate mathematical representation of microstructures is needed. By exploring the space containing all admissible microstructures that are statistically similar to the available data, one can estimate the distribution/envelope of possible properties by employing efficient stochastic simulation methodologies along with robust physics-based deterministic simulators. The focus of this thesis is on the construction of low-dimensional representations of random microstructures and the development of efficient physics-based simulators for polycrystalline materials. By adopting appropriate stochastic methods, such as Monte Carlo and Adaptive Sparse Grid Collocation methods, the variability of microstructure-sensitive properties of polycrystalline materials is investigated. The primary outcomes of this thesis include: (1) Development of data-driven reduced-order representations of microstructure variations to construct the admissible space of random polycrystalline microstructures. (2) Development of accurate and efficient physics-based simulators for the estimation of material properties based on mesoscale microstructures. (3) Investigating property variability of polycrystalline materials using efficient stochastic simulation methods in combination with the above two developments. The uncertainty quantification framework developed in this work integrates information science and materials science, and

  7. Development and evaluation of polycrystalline cadmium telluride dosimeters for accurate quality assurance in radiation therapy

    NASA Astrophysics Data System (ADS)

    Oh, K.; Han, M.; Kim, K.; Heo, Y.; Moon, C.; Park, S.; Nam, S.

    2016-02-01

    For quality assurance in radiation therapy, several types of dosimeters are used such as ionization chambers, radiographic films, thermo-luminescent dosimeter (TLD), and semiconductor dosimeters. Among them, semiconductor dosimeters are particularly useful for in vivo dosimeters or high dose gradient area such as the penumbra region because they are more sensitive and smaller in size compared to typical dosimeters. In this study, we developed and evaluated Cadmium Telluride (CdTe) dosimeters, one of the most promising semiconductor dosimeters due to their high quantum efficiency and charge collection efficiency. Such CdTe dosimeters include single crystal form and polycrystalline form depending upon the fabrication process. Both types of CdTe dosimeters are commercially available, but only the polycrystalline form is suitable for radiation dosimeters, since it is less affected by volumetric effect and energy dependence. To develop and evaluate polycrystalline CdTe dosimeters, polycrystalline CdTe films were prepared by thermal evaporation. After that, CdTeO3 layer, thin oxide layer, was deposited on top of the CdTe film by RF sputtering to improve charge carrier transport properties and to reduce leakage current. Also, the CdTeO3 layer which acts as a passivation layer help the dosimeter to reduce their sensitivity changes with repeated use due to radiation damage. Finally, the top and bottom electrodes, In/Ti and Pt, were used to have Schottky contact. Subsequently, the electrical properties under high energy photon beams from linear accelerator (LINAC), such as response coincidence, dose linearity, dose rate dependence, reproducibility, and percentage depth dose, were measured to evaluate polycrystalline CdTe dosimeters. In addition, we compared the experimental data of the dosimeter fabricated in this study with those of the silicon diode dosimeter and Thimble ionization chamber which widely used in routine dosimetry system and dose measurements for radiation

  8. Fabrication of transparent spinel polycrystalline materials

    SciTech Connect

    Shimada, M.; Endo, T.; Saito, T.

    1996-12-31

    The novel polycrystalline material of spinel-alumina solid solution, MgO{center_dot}nAl{sub 2}O{sub 3} (1 {le} n < 3):(Mg{sub x}Al{sub (2{minus}2x)/3})Al{sub 2}O{sub 4}(0.4 < x {le} 1.0), was fabricated by reaction sintering using commercial spinel, magnesia and alumina powders as starting material. The mixed powders of (magnesia + alumina) or (spinel + alumina) with above chemical composition were sintered at 1,450--1,550 C in air, followed by post-HIPing at 1,600--1,800 C and 150 MPa in Ar gas atmosphere. The resulting polycrystalline materials showed superior properties such as about 90% in-line optical transmittance at 300--5,000 nm, 250 MPa in fracture strength and 2.8 MPam{sup 1/2} in fracture toughness.

  9. Equilibrium shapes of polycrystalline silicon nanodots

    SciTech Connect

    Korzec, M. D. Wagner, B.; Roczen, M.; Schade, M.; Rech, B.

    2014-02-21

    This study is concerned with the topography of nanostructures consisting of arrays of polycrystalline nanodots. Guided by transmission electron microscopy (TEM) measurements of crystalline Si (c-Si) nanodots that evolved from a “dewetting” process of an amorphous Si (a-Si) layer from a SiO{sub 2} coated substrate, we investigate appropriate formulations for the surface energy density and transitions of energy density states at grain boundaries. We introduce a new numerical minimization formulation that allows to account for adhesion energy from an underlying substrate. We demonstrate our approach first for the free standing case, where the solutions can be compared to well-known Wulff constructions, before we treat the general case for interfacial energy settings that support “partial wetting” and grain boundaries for the polycrystalline case. We then use our method to predict the morphologies of silicon nanodots.

  10. Dynamic Failure of a Transparent Polycrystalline Ceramic

    NASA Astrophysics Data System (ADS)

    Bless, Stephan; Manoj Simha, C. Hari; Hartnett, Thomas

    1999-06-01

    We have performed some bar impact experiments on the transparent polycrystalline ceramic aluminum oxynitride (AlON). The experiments use embedded manganin gauges that measure the peak stress that propagates down the bar, and also high speed single frame photography. The peak stress measured in the AlON bars is 4 GPA, about 10% higher than that measured in AD-99.5 bars. The results of our work suggest that the behavior of AlON is similar to that of opaque polycrystalline alumina AD-99.5. The high speed photography has revealed some interesting insights into the behavior of the opaque alumina AD-99.5 which we have been investigating.

  11. Grain boundary mediated leakage current in polycrystalline HfO2 films

    SciTech Connect

    Mckenna, Keith P.; Shluger, AL; Iglesias, V.; Porti, M.; Nafria, M.; Lanza, M.; Bersuker, G.

    2011-07-01

    In this work, we combine conductive atomic force microscopy (CAFM) and first principles calculations to investigate leakage current in thin polycrystalline HfO2 films. A clear correlation between the presence of grain boundaries and increased leakage current through the film is demonstrated. The effect is a result of a number of related factors, including local reduction in the oxide film thickness near grain boundaries, the intrinsic electronic properties of grain boundaries which enhance direct tunnelling relative to the bulk, and segregation of oxygen vacancy defects which increase trap assisted tunnelling currents. These results highlight the important role of grain boundaries in determining the electrical properties of polycrystalline HfO2 films with relevance to applications in advanced logic and memory devices.

  12. Acoustoelectric current saturation in {ital c}-axis fiber-textured polycrystalline zinc oxide films

    SciTech Connect

    Pompe, T.; Srikant, V.; Clarke, D.R.

    1996-12-01

    Acoustoelectric current saturation, which until now has only been observed in piezoelectric single crystals, is observed in thin polycrystalline zinc oxide films. Epitaxial ZnO films on {ital c}-plane sapphire and textured ZnO polycrystalline films on fused silica both exhibit current saturation phenomenon. The values of the saturation current densities are in the range 10{sup 5}{endash}10{sup 6} A/cm{sup 2}, depending on the carrier concentration in the film, with corresponding saturation electric fields of 3{endash}5{times}10{sup 3} V/cm. In addition to the current saturation, the electrical properties of the films degraded with the onset of the acoustoelectric effect but could be restored by annealing at 250{degree}C in a vacuum for 30 min. {copyright} {ital 1996 American Institute of Physics.}

  13. Fluidized bed for production of polycrystalline silicon

    SciTech Connect

    Flagella, R.N.

    1992-08-18

    This patent describes a method for removing silicon powder particles from a reactor that produces polycrystalline silicon by the pyrolysis of a silane containing gas in a fluidized bed reaction zone of silicon seed particles. It comprises introducing the silane containing gas stream into the reaction zone of fluidized silicon seed particles; heterogeneously decomposing the silane containing gas under conditions; collecting the silicon product particles from the collection zone; and removing silicon powder particles from the reactor.

  14. Structure and Electronic Properties of Polycrystalline Dielectrics

    SciTech Connect

    Mckenna, Keith P.; Shluger, AL

    2013-07-07

    We present an overview of the theoretical approaches that can be employed to model polycrystalline oxides along with a discussion of their limitations and associated challenges. We then present results for two metal oxide materials, MgO and HfO2, where theory and experiment have come together to provide insight into the structure and electronic properties of grain boundaries. Finally, we conclude with a discussion and outlook.

  15. Effective structural properties in polycrystalline graphene

    NASA Astrophysics Data System (ADS)

    Hossain, Zubaer

    This talk will discuss effective structural properties in polycrystalline graphene under the presence of atomic scale heterogeneity. Polycrystallinity is ubiquitous in solids, but theories describing their effective behavior remain limited, particularly when heterogeneity is present in the form of nonuniform deformation or composition. Over the decades, exploration of the effective transport and strength properties of heterogeneous systems has been carried out mostly with random distribution of grains or regular periodic structures under various approximations, in translating the underlying physics into a single representative volume element. Although heterogeneity can play a critical role in modulating the basic behavior of low-dimensional materials, it is difficult to capture the local characteristics accurately by these approximations. Taking polycrystalline graphene as an example material, we study the effective structural properties (such as Young's Modulus, Poisson's ratio and Toughness) by using a combination of density functional theory and molecular dynamic simulations. We identify the key mechanisms that govern their effective behavior and exploit the understanding to engineer the behavior by doping with a carefully selected choice of chemical elements.

  16. Characterization of electrochemically modified polycrystalline platinum surfaces

    SciTech Connect

    Krebs, L.C.; Ishida, Takanobu.

    1991-12-01

    The characterization of electrochemically modified polycrystalline platinum surfaces has been accomplished through the use of four major electrochemical techniques. These were chronoamperometry, chronopotentiommetry, cyclic voltammetry, and linear sweep voltammetry. A systematic study on the under-potential deposition of several transition metals has been performed. The most interesting of these were: Ag, Cu, Cd, and Pb. It was determined, by subjecting the platinum electrode surface to a single potential scan between {minus}0.24 and +1.25 V{sub SCE} while stirring the solution, that the electrocatalytic activity would be regenerated. As a consequence of this study, a much simpler method for producing ultra high purity water from acidic permanganate has been developed. This method results in water that surpasses the water produced by pyrocatalytic distillation. It has also been seen that the wettability of polycrystalline platinum surfaces is greatly dependent on the quantity of oxide present. Oxide-free platinum is hydrophobic and gives a contact angle in the range of 55 to 62 degrees. We have also modified polycrystalline platinum surface with the electrically conducting polymer poly-{rho}-phenylene. This polymer is very stable in dilute sulfuric acid solutions, even under applied oxidative potentials. It is also highly resistant to electrochemical hydrogenation. The wettability of the polymer modified platinum surface is severely dependent on the choice of supporting electrolyte chosen for the electrochemical polymerization. Tetraethylammonium tetrafluoroborate produces a film that is as hydrophobic as Teflon, whereas tetraethylammonium perchlorate produces a film that is more hydrophilic than oxide-free platinum.

  17. Thickness-dependent cooperative aging in polycrystalline films of antiferromagnet CoO

    NASA Astrophysics Data System (ADS)

    Ma, Tianyu; Cheng, Xiang; Boettcher, Stefan; Urazhdin, Sergei; Novozhilova, Lydia

    2016-07-01

    We demonstrate that thin polycrystalline films of antiferromagnet CoO, in bilayers with ferromagnetic Permalloy, exhibit slow power-law aging of their magnetization state. The aging characteristics are remarkably similar to those previously observed in thin epitaxial Fe50Mn50 films, indicating that these behaviors are likely generic to ferromagnet/antiferromagnet bilayers. In very thin films, aging is observed over a wide temperature range. In thicker CoO, aging effects become reduced at low temperatures. Aging entirely disappears for large CoO thicknesses. We also investigate the dependence of aging characteristics on temperature and magnetic history. Analysis shows that the observed behaviors are inconsistent with the Neel-Arrhenius model of thermal activation, and are instead indicative of cooperative aging of the antiferromagnet. Our results provide new insights into the mechanisms controlling the stationary states and dynamics of ferromagnet/antiferromagnet bilayers, and potentially other frustrated magnetic systems.

  18. Abnormality in fracture strength of polycrystalline silicene

    NASA Astrophysics Data System (ADS)

    Liu, Ning; Hong, Jiawang; Pidaparti, Ramana; Wang, Xianqiao

    2016-09-01

    Silicene, a silicon-based homologue of graphene, arouses great interest in nano-electronic devices due to its outstanding electronic properties. However, its promising electronic applications are greatly hindered by lack of understanding in the mechanical strength of silicene. Therefore, in order to design mechanically reliable devices with silicene, it is necessary to thoroughly explore the mechanical properties of silicene. Due to current fabrication methods, graphene is commonly produced in a polycrystalline form; the same may hold for silicene. Here we perform molecular dynamics simulations to investigate the mechanical properties of polycrystalline silicene. First, an annealing process is employed to construct a more realistic modeling structure of polycrystalline silicene. Results indicate that a more stable structure is formed due to the breaking and reformation of bonds between atoms on the grain boundaries. Moreover, as the grain size decreases, the efficiency of the annealing process, which is quantified by the energy change, increases. Subsequently, biaxial tensile tests are performed on the annealed samples in order to explore the relation between grain size and mechanical properties, namely in-plane stiffness, fracture strength and fracture strain etc. Results indicate that as the grain size decreases, the fracture strain increases while the fracture strength shows an inverse trend. The decreasing fracture strength may be partly attributed to the weakening effect from the increasing area density of defects which acts as the reservoir of stress-concentrated sites on the grain boundary. The observed crack localization and propagation and fracture strength are well-explained by a defect-pileup model.

  19. Process for Polycrystalline film silicon growth

    DOEpatents

    Wang, Tihu; Ciszek, Theodore F.

    2001-01-01

    A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

  20. Polycrystalline gamma plutonium's elastic moduli versus temperature

    SciTech Connect

    Migliori, Albert; Betts, J; Trugman, A; Mielke, C H; Mitchell, J N; Ramos, M; Stroe, I

    2009-01-01

    Resonant ultrasound spectroscopy was used to measure the elastic properties of pure polycrystalline {sup 239}Pu in the {gamma} phase. Shear and longitudinal elastic moduli were measured simultaneously and the bulk modulus was computed from them. A smooth, linear, and large decrease of all elastic moduli with increasing temperature was observed. They calculated the Poisson ratio and found that it increases from 0.242 at 519 K to 0.252 at 571 K. These measurements on extremely well characterized pure Pu are in agreement with other reported results where overlap occurs.

  1. Dynamic failure of a transparent polycrystalline ceramic

    NASA Astrophysics Data System (ADS)

    Cazamias, J. U.; Bless, S. J.; Simha, C. Hari Manoj; Hartnett, T. M.

    2000-04-01

    We have performed bar impact experiments on aluminum oxynitride (AlON), a transparent polycrystalline ceramic, measuring the peak stress and taking high-speed photographs. The peak stress measured in the AlON bars is 4 GPa, about 10% higher than that measured in AD-99.5 bars. Failure was observed propagating up the center of the bar, leaving the outer part intact at relatively late times. There was anomalous damage to the witness bar, similar to what happens with glass bars, indicating either retained strength in the center column or explosive fracture of the AlON bar.

  2. Synchrotron X-ray Microdiffraction Analysis of Proton Irradiated Polycrystalline Diamond Films

    NASA Technical Reports Server (NTRS)

    Newton, R. I.; Davidson, J. L.; Ice, G. E.; Liu, W.

    2004-01-01

    X-ray microdiffraction is a non-destructive technique that allows for depth-resolved, strain measurements with sub-micron spatial resolution. These capabilities make this technique promising for understanding the mechanical properties of MicroElectroMechanical Systems (MEMS). This investigation examined the local strain induced by irradiating a polycrystalline diamond thin film with a dose of 2x10(exp 17) H(+)per square centimeter protons. Preliminary results indicate that a measurable strain, on the order of 10(exp -3), was introduced into the film near the End of Range (EOR) region of the protons.

  3. Helium irradiation effects in polycrystalline Si, silica, and single crystal Si

    SciTech Connect

    Abrams, K. J.; Greaves, G.; Berg, J. A. van den; Hinks, J. A.; Donnelly, S. E.; Pawley, C. J.; Eyidi, D.; Ward, M. B.

    2012-04-15

    Transmission electron microscopy (TEM) has been used to investigate the effects of room temperature 6 keV helium ion irradiation of a thin ({approx_equal}55 nm thick) tri-layer consisting of polycrystalline Si, silica, and single-crystal Si. The ion irradiation was carried out in situ within the TEM under conditions where approximately 24% of the incident ions came to rest in the specimen. This paper reports on the comparative development of irradiation-induced defects (primarily helium bubbles) in the polycrystalline Si and single-crystal Si under ion irradiation and provides direct measurement of a radiation-induced increase in the width of the polycrystalline layer and shrinkage of the silica layer. Analysis using TEM and electron energy-loss spectroscopy has led to the hypothesis that these result from helium-bubble-induced swelling of the silicon and radiation-induced viscoelastic flow processes in the silica under the influence of stresses applied by the swollen Si layers. The silicon and silica layers are sputtered as a result of the helium ion irradiation; however, this is estimated to be a relatively minor effect with swelling and stress-related viscoelastic flow being the dominant mechanisms of dimensional change.

  4. Electrical properties of polycrystalline methane hydrate

    USGS Publications Warehouse

    Du Frane, W. L.; Stern, L.A.; Weitemeyer, K.A.; Constable, S.; Pinkston, J.C.; Roberts, J.J.

    2011-01-01

    Electromagnetic (EM) remote-sensing techniques are demonstrated to be sensitive to gas hydrate concentration and distribution and complement other resource assessment techniques, particularly seismic methods. To fully utilize EM results requires knowledge of the electrical properties of individual phases and mixing relations, yet little is known about the electrical properties of gas hydrates. We developed a pressure cell to synthesize gas hydrate while simultaneously measuring in situ frequency-dependent electrical conductivity (σ). Synthesis of methane (CH4) hydrate was verified by thermal monitoring and by post run cryogenic scanning electron microscope imaging. Impedance spectra (20 Hz to 2 MHz) were collected before and after synthesis of polycrystalline CH4 hydrate from polycrystalline ice and used to calculate σ. We determined the σ of CH4 hydrate to be 5 × 10−5 S/m at 0°C with activation energy (Ea) of 30.6 kJ/mol (−15 to 15°C). After dissociation back into ice, σ measurements of samples increased by a factor of ~4 and Ea increased by ~50%, similar to the starting ice samples.

  5. Acidic magnetorheological finishing of infrared polycrystalline materials

    DOE PAGES

    Salzman, S.; Romanofsky, H. J.; West, G.; Marshall, K. L.; Jacobs, S. D.; Lambropoulos, J. C.

    2016-10-12

    Here, chemical-vapor–deposited (CVD) ZnS is an example of a polycrystalline material that is difficult to polish smoothly via the magnetorheological–finishing (MRF) technique. When MRF-polished, the internal infrastructure of the material tends to manifest on the surface as millimeter-sized “pebbles,” and the surface roughness observed is considerably high. The fluid’s parameters important to developing a magnetorheological (MR) fluid that is capable of polishing CVD ZnS smoothly were previously discussed and presented. These parameters were acidic pH (~4.5) and low viscosity (~47 cP). MRF with such a unique MR fluid was shown to reduce surface artifacts in the form of pebbles; however,more » surface microroughness was still relatively high because of the absence of a polishing abrasive in the formulation. In this study, we examine the effect of two polishing abrasives—alumina and nanodiamond—on the surface finish of several CVD ZnS substrates, and on other important IR polycrystalline materials that were finished with acidic MR fluids containing these two polishing abrasives. Surface microroughness results obtained were as low as ~28 nm peak-to-valley and ~6-nm root mean square.« less

  6. Reversible piezomagnetoelectric switching in bulk polycrystalline ceramics

    SciTech Connect

    Stevenson, T. Bennett, J.; Brown, A. P.; Wines, T.; Bell, A. J.; Comyn, T. P.; Smith, R. I.

    2014-08-01

    Magnetoelectric (ME) coupling in materials offer tremendous advantages in device functionality enabling technologies including advanced electronic memory, combining electronic speed, and efficiency with magnetic robustness. However, low cost polycrystalline ME materials are excluded from most commercial applications, operating only at cryogenic temperatures, impractically large electric/magnetic fields, or with low ME coefficients (1-100 mV/cm Oe). Despite this, the technological potential of single compound ME coupling has continued to drive research into multiferroics over the last two decades. Here we show that by manipulating the large induced atomic strain within the polycrystalline, room temperature multiferroic compound 0.7BiFeO{sub 3}–0.3PbTiO{sub 3}, we can induce a reversible, piezoelectric strain controlled ME effect. Employing an in situ neutron diffraction experiment, we have demonstrated that this piezomagnetoelectric effect manifests with an applied electric field >8 kV/mm at the onset of piezoelectric strain, engineered in to the compound by crystallographic phase mixing. This produces a remarkable intrinsic ME coefficient of 1276 mV/cm Oe, due to a strain driven modification to the oxygen sub-lattice, inducing an increase in magnetic moment per Fe{sup 3+} ion of +0.142 μ{sub B}. This work provides a framework for investigations into strain engineered nanostructures to realize low-cost ME devices designed from the atoms up, as well as contributing to the deeper understanding of single phase ME coupling mechanisms.

  7. Modelling heat conduction in polycrystalline hexagonal boron-nitride films.

    PubMed

    Mortazavi, Bohayra; Pereira, Luiz Felipe C; Jiang, Jin-Wu; Rabczuk, Timon

    2015-01-01

    We conducted extensive molecular dynamics simulations to investigate the thermal conductivity of polycrystalline hexagonal boron-nitride (h-BN) films. To this aim, we constructed large atomistic models of polycrystalline h-BN sheets with random and uniform grain configuration. By performing equilibrium molecular dynamics (EMD) simulations, we investigated the influence of the average grain size on the thermal conductivity of polycrystalline h-BN films at various temperatures. Using the EMD results, we constructed finite element models of polycrystalline h-BN sheets to probe the thermal conductivity of samples with larger grain sizes. Our multiscale investigations not only provide a general viewpoint regarding the heat conduction in h-BN films but also propose that polycrystalline h-BN sheets present high thermal conductivity comparable to monocrystalline sheets. PMID:26286820

  8. Modelling heat conduction in polycrystalline hexagonal boron-nitride films

    PubMed Central

    Mortazavi, Bohayra; Pereira, Luiz Felipe C.; Jiang, Jin-Wu; Rabczuk, Timon

    2015-01-01

    We conducted extensive molecular dynamics simulations to investigate the thermal conductivity of polycrystalline hexagonal boron-nitride (h-BN) films. To this aim, we constructed large atomistic models of polycrystalline h-BN sheets with random and uniform grain configuration. By performing equilibrium molecular dynamics (EMD) simulations, we investigated the influence of the average grain size on the thermal conductivity of polycrystalline h-BN films at various temperatures. Using the EMD results, we constructed finite element models of polycrystalline h-BN sheets to probe the thermal conductivity of samples with larger grain sizes. Our multiscale investigations not only provide a general viewpoint regarding the heat conduction in h-BN films but also propose that polycrystalline h-BN sheets present high thermal conductivity comparable to monocrystalline sheets. PMID:26286820

  9. Multiscale modeling of thermal conductivity of polycrystalline graphene sheets.

    PubMed

    Mortazavi, Bohayra; Pötschke, Markus; Cuniberti, Gianaurelio

    2014-03-21

    We developed a multiscale approach to explore the effective thermal conductivity of polycrystalline graphene sheets. By performing equilibrium molecular dynamics (EMD) simulations, the grain size effect on the thermal conductivity of ultra-fine grained polycrystalline graphene sheets is investigated. Our results reveal that the ultra-fine grained graphene structures have thermal conductivity one order of magnitude smaller than that of pristine graphene. Based on the information provided by the EMD simulations, we constructed finite element models of polycrystalline graphene sheets to probe the thermal conductivity of samples with larger grain sizes. Using the developed multiscale approach, we also investigated the effects of grain size distribution and thermal conductivity of grains on the effective thermal conductivity of polycrystalline graphene. The proposed multiscale approach on the basis of molecular dynamics and finite element methods could be used to evaluate the effective thermal conductivity of polycrystalline graphene and other 2D structures.

  10. Residual Stress Predictions in Polycrystalline Alumina

    SciTech Connect

    VEDULA,VENKATA R.; GLASS,S. JILL; SAYLOR,DAVID M.; ROHRER,GREGORY S.; CARTER,W. CRAIG; LANGER,STEPHEN A.

    1999-12-13

    Microstructure-level residual stresses arise in polycrystalline ceramics during processing as a result of thermal expansion anisotropy and crystallographic disorientation across the grain boundaries. Depending upon the grain size, the magnitude of these stresses can be sufficiently high to cause spontaneous microcracking during the processing of these materials. They are also likely to affect where cracks initiate and propagate under macroscopic loading. The magnitudes of residual stresses in untextured and textured alumina samples were predicted using object oriented finite (OOF) element analysis and experimentally determined grain orientations. The crystallographic orientations were obtained by electron-backscattered diffraction (EBSD). The residual stresses were lower and the stress distributions were narrower in the textured samples compared to those in the untextured samples. Crack initiation and propagation were also simulated using the Griffith fracture criterion. The grain boundary to surface energy ratios required for computations were estimated using AFM groove measurements.

  11. Modeling of Irradiation Hardening of Polycrystalline Materials

    SciTech Connect

    Li, Dongsheng; Zbib, Hussein M.; Garmestani, Hamid; Sun, Xin; Khaleel, Mohammad A.

    2011-09-14

    High energy particle irradiation of structural polycrystalline materials usually produces irradiation hardening and embrittlement. The development of predict capability for the influence of irradiation on mechanical behavior is very important in materials design for next generation reactors. In this work a multiscale approach was implemented to predict irradiation hardening of body centered cubic (bcc) alpha-iron. The effect of defect density, texture and grain boundary was investigated. In the microscale, dislocation dynamics models were used to predict the critical resolved shear stress from the evolution of local dislocation and defects. In the macroscale, a viscoplastic self-consistent model was applied to predict the irradiation hardening in samples with changes in texture and grain boundary. This multiscale modeling can guide performance evaluation of structural materials used in next generation nuclear reactors.

  12. Tensile creep behavior of polycrystalline alumina fibers

    NASA Technical Reports Server (NTRS)

    Yun, H. M.; Goldsby, J. C.

    1993-01-01

    Tensile creep studies were conducted on polycrystalline Nextel 610 and Fiber FP alumina fibers with grain sizes of 100 and 300 nm, respectively. Test conditions were temperatures from 800 to 1050 C and stresses from 60 to 1000 MPa. For both fibers, only a small primary creep portion occurred followed by steady-state creep. The stress exponents for steady-state creep of Nextel 610 and Fiber FP were found to be about 3 and 1, respectively. At lower temperatures, below 1000 C, the finer grained Nextel 610 had a much higher 0.2 percent creep strength for 100 hr than the Fiber FP; while at higher temperatures, Nextel 610 had a comparable creep strength to the Fiber FP. The stress and grain size dependencies suggest Nextel 610 and Fiber FP creep rates are due to grain boundary sliding controlled by interface reaction and Nabarro-Herring mechanisms, respectively.

  13. Polycrystalline silicon ion sensitive field effect transistors

    NASA Astrophysics Data System (ADS)

    Yan, F.; Estrela, P.; Mo, Y.; Migliorato, P.; Maeda, H.; Inoue, S.; Shimoda, T.

    2005-01-01

    We report the operation of polycrystalline silicon ion sensitive field effect transistors. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with a Si3N4 sensing layer. Nearly ideal pH sensitivity (54mV /pH) and stable operation have been achieved. Temperature effects have been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The sensitivity to penicillin G is about 10mV/mM, in solutions with concentration lower than the saturation value, which is about 7 mM.

  14. Investigation of polycrystalline ferroelectric tunnel junction

    NASA Astrophysics Data System (ADS)

    Hou, Pengfei; Wang, Jinbin; Zhong, Xiangli

    2016-07-01

    Ferroelectric tunnel junction (FTJ) is a breakthrough for addressing the nondestructive read in the ferroelectric random access memories. However, FTJs with nearly ideal characteristics have only been demonstrated on perovskite heterostructures that are deposited on closely lattice-matched and non-silicon substrates, or silicon substrates with epitaxial multilayer. In order to promote the application of FTJs, we develop a polycrystalline FTJ with ultrathin bottom electrode, in which the resistance variations exceed two orders of magnitude. And we achieve two stable logic states written and read easily using voltage pulses. Especially the device integrates with the silicon technology in modern microelectronics. Our results suggest new opportunities for ferroelectrics as nonvolatile resistive switching memory.

  15. Plastic deformation of polycrystalline zirconium carbide

    NASA Technical Reports Server (NTRS)

    Darolia, R.; Archbold, T. F.

    1976-01-01

    The compressive yield strength of arc-melted polycrystalline zirconium carbide has been found to vary from 77 kg per sq mm at 1200 C to 19 kg per sq mm at 1800 C. Yield drops were observed with plastic strain-rates greater than 0.003/sec but not with slower strain rates. Strain-rate change experiments yielded values for the strain-rate sensitivity parameter m which range from 6.5 at 1500 C to 3.8 at 1800 C, and the product dislocation velocity stress exponent times T was found to decrease linearly with increasing temperature. The deformation rate results are consistent with the Kelly-Rowcliffe model in which the diffusion of carbon assists the motion of dislocations.

  16. Helium Migration Mechanisms in Polycrystalline Uranium Dioxide

    SciTech Connect

    Martin, Guillaume; Desgardin, Pierre; Sauvage, Thierry; Barthe, Marie-France; Garcia, Philippe; Carlot, Gaelle

    2007-07-01

    This study aims at identifying the release mechanisms of helium in uranium dioxide. Two sets of polycrystalline UO{sub 2} sintered samples presenting different microstructures were implanted with {sup 3}He ions at concentrations in the region of 0.1 at.%. Changes in helium concentrations were monitored using two Nuclear Reaction Analysis (NRA) techniques based on the {sup 3}He(d,{alpha}){sup 1}H reaction. {sup 3}He release is measured in-situ during sample annealing at temperatures ranging between 700 deg. C and 1000 deg. C. Accurate helium depth profiles are generated after each annealing stage. Results that provide data for further understanding helium release mechanisms are discussed. It is found that helium diffusion appears to be enhanced above 900 deg. C in the vicinity of grain boundaries possibly as a result of the presence of defects. (authors)

  17. On properties of boundaries and electron conductivity in mesoscopic polycrystalline silicon films for memory devices

    SciTech Connect

    Berman, G.P.; Doolen, G.D.; Mainieri, R.; Rehacek, J.; Campbell, D.K.; Luchnikov, V.A.; Nagaev, K.E.

    1998-02-01

    The authors present the results of MD modeling on the structural properties of grain boundaries (GB) in thin polycrystalline films. The transition from crystalline boundaries with low mismatch angle to amorphous boundaries is investigated. It is shown that the structures of the GBs satisfy a thermodynamical criterion suggested in a cited reference. The potential energy of silicon atoms is closely related with a geometrical quantity -- tetragonality of their coordination with their nearest neighbors. A crossover of the length of localization is observed to analyze the crossover of the length of localization of the single electron states and properties of conductance of the thin polycrystalline film at low temperature. They use a two-dimensional Anderson localization model, with the random one site electron charging energy for a single grain (dot), random non-diagonal matrix elements, and random number of connections between the neighboring grains. The results on the crossover behavior of localization length of the single electron states and characteristic properties of conductance are presented in the region of parameters where the transition from an insulator to a conductor regimes takes place.

  18. Submicrometer-wide amorphous and polycrystalline anatase TiO2 waveguides for microphotonic devices.

    PubMed

    Bradley, Jonathan D B; Evans, Christopher C; Choy, Jennifer T; Reshef, Orad; Deotare, Parag B; Parsy, François; Phillips, Katherine C; Lončar, Marko; Mazur, Eric

    2012-10-01

    We demonstrate amorphous and polycrystalline anatase TiO(2) thin films and submicrometer-wide waveguides with promising optical properties for microphotonic devices. We deposit both amorphous and polycrystalline anatase TiO(2) using reactive sputtering and define waveguides using electron-beam lithography and reactive ion etching. For the amorphous TiO(2), we obtain propagation losses of 0.12 ± 0.02 dB/mm at 633 nm and 0.04 ± 0.01 dB/mm at 1550 nm in thin films and 2.6 ± 0.5 dB/mm at 633 nm and 0.4 ± 0.2 dB/mm at 1550 nm in waveguides. Using single-mode amorphous TiO(2) waveguides, we characterize microphotonic features including microbends and optical couplers. We show transmission of 780-nm light through microbends having radii down to 2 μm and variable signal splitting in microphotonic couplers with coupling lengths of 10 μm. PMID:23188347

  19. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    SciTech Connect

    Coloma Ribera, R. Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F.

    2015-08-07

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  20. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    NASA Astrophysics Data System (ADS)

    Coloma Ribera, R.; van de Kruijs, R. W. E.; Yakshin, A. E.; Bijkerk, F.

    2015-08-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  1. Electrodeposited CuInSe{sub 2} thin film devices

    SciTech Connect

    Raffaelle, R.P.; Mantovani, J.G.; Friedfeld, R.B.; Bailey, S.G.; Hubbard, S.M.

    1997-12-31

    The authors have been investigating the electrochemical deposition of thin films and junctions based on copper indium diselenide (CIS). CIS is considered to be one of the best absorber materials for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a simple and inexpensive method for producing thin-film CIS. The authors have produced both p and n type CIS thin films, as well as a CIS pn junction electrodeposited from a single aqueous solution. Optical bandgaps were determined for these thin films using transmission spectroscopy. Current versus voltage characteristics were measured for Schottky barriers on the individual films and for the pn junction.

  2. Polycrystalline silicon semiconducting material by nuclear transmutation doping

    DOEpatents

    Cleland, John W.; Westbrook, Russell D.; Wood, Richard F.; Young, Rosa T.

    1978-01-01

    A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

  3. Solution-processed polycrystalline silicon on paper

    NASA Astrophysics Data System (ADS)

    Trifunovic, M.; Shimoda, T.; Ishihara, R.

    2015-04-01

    Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their printability, while these materials lack in the electronic performance when compared to silicon electronics. Silicon electronics, on the other hand, has only recently found their way in solution processes. Printing of cyclopentasilane as the silicon ink has been conducted and devices with far superior electric performance have been made when compared to other ink materials. A thermal annealing step of this material, however, was necessary, which prevented its usage on inexpensive substrates with a limited thermal budget. In this work, we introduce a method that allows polycrystalline silicon (poly-Si) production directly from the same liquid silicon ink using excimer laser irradiation. In this way, poly-Si could be formed directly on top of paper even with a single laser pulse. Using this method, poly-Si transistors were created at a maximum temperature of only 150 °C. This method allows silicon device formation on inexpensive, temperature sensitive substrates such as polyethylene terephthalate, polyethylene naphthalate or paper, which leads to applications that require low-cost but high-speed electronics.

  4. Polishing of dental porcelain by polycrystalline diamond.

    PubMed

    Nakamura, Yoshiharu; Sato, Hideaki; Ohtsuka, Masaki; Hojo, Satoru

    2010-01-01

    Polycrystalline diamond (PCD) exhibits excellent abrasive characteristics and is commonly used as loose grains for precision machining of hard ceramics and other materials that are difficult to grind and polish. In the present study, we investigated using bonded PCD for polishing dental porcelain, for which a lustrous surface is difficult to obtain by polishing. We compared the surface texture and characteristics of dental porcelain after polishing with bonded PCD with that obtained using bonded monocrystalline diamond (MCD), which is commonly used for this purpose. Polishing was performed at various pressures and rotational speeds on a custom-built polishing apparatus using bonded PCD or MCD with grain sizes of 3.92 μm on specimens consisting of VITA Omega 900 dentin porcelain after firing and then glazing to a specified surface roughness. The surface roughness of the polished porcelain and the abrasion quantity in terms of its polishing depth were measured, and its surface texture and characteristics were investigated. At low polishing pressures, PCD yielded a finer polished surface than MCD. The polishing depth after polishing for 20-30 min was approximately 2-3 μm with PCD and 1-2 μm with MCD. The polished surface was more uniform and smooth with PCD than with MCD.

  5. Nonlinear alternating current conduction in polycrystalline manganites

    NASA Astrophysics Data System (ADS)

    Ghosh, T. N.; Nandi, U. N.; Jana, D.; Dey, K.; Giri, S.

    2014-06-01

    The real part of ac conductance Σ(T, f) of yttrium-doped mixed-valent polycrystalline manganite systems La1-x -yYyCaxMnO3 with x = 0.33 and 0.05 and y = 0.07 and iron doped LaMn1-xFexO3 with x = 0.15 is measured as a function of frequency f by varying zero-frequency Ohmic conductance Σ0 by T. The former shows a metal-insulator transition, whereas the latter exhibits insulating character throughout the measured temperature range. At a fixed temperature T, Σ(T, f) remains almost constant to the value Σ0 up to a certain frequency, known as the onset frequency fc and increases from Σ0 as frequency is increased from fc. Scaled appropriately, the data for Σ(T, f) at different T fall on the same universal curve, indicating the existence of a general scaling formalism for the ac conductance. fc scales with Σ0 as fc˜Σ0xf, where xf is the nonlinearity exponent characterising the onset. With the help of data for ac conduction, it is shown that xf is very much phase sensitive and can be used to characterize the different phases in a manganite system originated due to change in temperature or disorder. Scaling theories and existing theoretical models are used to analyze the results of ac conduction and the nonlinearity exponent xf.

  6. Geometric considerations for diffusion in polycrystalline solids

    NASA Astrophysics Data System (ADS)

    Chen, Ying; Schuh, Christopher A.

    2007-03-01

    Mass transport in polycrystals is usually enhanced by short-circuit diffusion along various defect paths, e.g., grain boundaries, dislocation cores, and triple junctions. In the "kinetic-A" regime, diffusion fields associated with the various diffusion paths overlap each other, forming a macroscopically homogeneous diffusion profile that can be described by an effective diffusion coefficient. Here, we develop a composite diffusion model for polycrystals based on realistic arrangements between various microstructural elements, which usually exhibit complex network morphologies. Asymmetric effective medium equations and power-law scaling relationships are used to evaluate the effective diffusivity of a general isotropic polycrystal, and are compared to predictions of the simple arithmetic rule of mixtures used frequently in the literature. We also examine the grain size and temperature dependence of polycrystalline diffusion in terms of the apparent grain size exponent and activation energy, which in turn provide the basis by which we assess dominant diffusion processes and construct generalized diffusion mechanism maps. Implications of geometry on experimental diffusivity measurements are also discussed.

  7. Relaxation Mechanisms in Hyperpolarized Polycrystalline ^129Xe

    NASA Astrophysics Data System (ADS)

    Samuelson, G.; Su, T.; Saam, B.

    2002-10-01

    Through spin exchange with optically polarized Rb vapor, it is possible to achieve upwards of 30% nuclear spin polarization in ^129Xe and a corresponding NMR signal some 5 orders of magnitude stronger than typical thermally polarized ^129Xe. Due to such a strong signal, hyperpolarized ^129Xe is being used for several leading-edge technologies (eg. biochemical spectroscopy, MRI, and polarization transfer). We have measured the nuclear spin relaxation rate of polycrystalline hyperpolarized ^129Xe at 77K (well below the freezing point of 160K) in a magnetic field of only a few Gauss and have observed that the hyperpolarization completely survives the freezing process. Furthermore, in this regime we have observed non-exponential spin relaxation that depends strongly on magnetic field, isotopic concentration (between ^129Xe and ^131Xe) and differences in crystallite formation. We present a simple spin-diffusion model that fits and explains the features of the data. Our results agree with the hypothesis that at low fields and temperatures the dominant spin relaxation mechanism is cross-relaxation with ^131Xe on the surface of the crystallites (Gatzke, et al., PRL b70, 690 (1993)).

  8. Texture and Anisotropy of Polycrystalline Piezoelectics

    SciTech Connect

    Jones,J.; Iverson, B.; Bowman, K.

    2007-01-01

    Piezoelectricity is manifested in ferroelectric ceramics by inducing a preferred volume fraction of one ferroelectric domain variant orientation at the expense of degenerate orientations. The piezoelectric effect is therefore largely controlled by the effectiveness of the electrical poling in producing a bias in ferroelectric (180{sup o}) and ferroelastic (non-180{sup o}) domain orientations. Further enhancement of the piezoelectric effect in bulk ceramics can be accomplished by inducing preferred orientation through grain-orientation processes such as hot forging or tape casting that precede the electrical-poling process. Coupled crystal orientation and domain orientation processing yields ceramics with an even greater piezoelectric response. In this paper, preferred orientations of domains and grains in polycrystalline piezoelectric ceramics generated through both domain- and grain-orientation processing are characterized through pole figures and orientation distribution functions obtained using data from a variety of diffraction techniques. The processing methods used to produce these materials and the methods used to evaluate preferred orientation and texture are described and discussed in the context of prior research. Different sample and crystal symmetries are explored across a range of commercial and laboratory-prepared materials. Some of the variables presented in this work include the effects of in situ thermal depoling and the detailed processing parameters used in tape casting of materials with preferred crystallite orientations. Preferred orientation is also correlated with anisotropic properties, demonstrating a clear influence of both grain and domain orientations on piezoelectricity.

  9. Solution-processed polycrystalline silicon on paper

    SciTech Connect

    Trifunovic, M.; Ishihara, R.; Shimoda, T.

    2015-04-20

    Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their printability, while these materials lack in the electronic performance when compared to silicon electronics. Silicon electronics, on the other hand, has only recently found their way in solution processes. Printing of cyclopentasilane as the silicon ink has been conducted and devices with far superior electric performance have been made when compared to other ink materials. A thermal annealing step of this material, however, was necessary, which prevented its usage on inexpensive substrates with a limited thermal budget. In this work, we introduce a method that allows polycrystalline silicon (poly-Si) production directly from the same liquid silicon ink using excimer laser irradiation. In this way, poly-Si could be formed directly on top of paper even with a single laser pulse. Using this method, poly-Si transistors were created at a maximum temperature of only 150 °C. This method allows silicon device formation on inexpensive, temperature sensitive substrates such as polyethylene terephthalate, polyethylene naphthalate or paper, which leads to applications that require low-cost but high-speed electronics.

  10. Thermophotovoltaic Cells on Zinc Diffused Polycrystalline GaSb

    SciTech Connect

    Sulima, O.V.; Bett, A.W.; Dutta, P.S.; Ehsani, H.; Gutmann, R.J.

    2000-05-01

    For the first time, it has been demonstrated that thermophotovoltaic cells made of polycrystalline GaSb with small grain sizes (down to 100 x 100 {micro}m) have similar characteristics to the best Zinc diffused single crystal GaSb cells with identified device parameters. The grain boundaries in polycrystalline GaSb do not degrade TPV cell parameters, indicating that such material can be used for high-efficiency thermophotovoltaic cells.

  11. Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals

    DOEpatents

    Albright, Scot P.; Chamberlin, Rhodes R.

    1996-03-26

    A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.

  12. Nonlinear alternating current conduction in polycrystalline manganites

    SciTech Connect

    Ghosh, T. N.; Nandi, U. N.; Jana, D.; Dey, K.; Giri, S.

    2014-06-28

    The real part of ac conductance Σ(T, f) of yttrium-doped mixed-valent polycrystalline manganite systems La{sub 1−x−y}Y{sub y}Ca{sub x}MnO{sub 3} with x = 0.33 and 0.05 and y = 0.07 and iron doped LaMn{sub 1−x}Fe{sub x}O{sub 3} with x = 0.15 is measured as a function of frequency f by varying zero-frequency Ohmic conductance Σ{sub 0} by T. The former shows a metal-insulator transition, whereas the latter exhibits insulating character throughout the measured temperature range. At a fixed temperature T, Σ(T, f) remains almost constant to the value Σ{sub 0} up to a certain frequency, known as the onset frequency f{sub c} and increases from Σ{sub 0} as frequency is increased from f{sub c}. Scaled appropriately, the data for Σ(T, f) at different T fall on the same universal curve, indicating the existence of a general scaling formalism for the ac conductance. f{sub c} scales with Σ{sub 0} as f{sub c}∼Σ{sub 0}{sup x{sub f}}, where x{sub f} is the nonlinearity exponent characterising the onset. With the help of data for ac conduction, it is shown that x{sub f} is very much phase sensitive and can be used to characterize the different phases in a manganite system originated due to change in temperature or disorder. Scaling theories and existing theoretical models are used to analyze the results of ac conduction and the nonlinearity exponent x{sub f}.

  13. Defect behavior of polycrystalline solar cell silicon

    SciTech Connect

    Schroder, D.K.; Park, S.H.; Hwang, I.G.; Mohr, J.B.; Hanly, M.P.

    1993-05-01

    The major objective of this study, conducted from October 1988 to September 1991, was to gain an understanding of the behavior of impurities in polycrystalline silicon and the influence of these impurities on solar cell efficiency. The authors studied edge-defined film-fed growth (EFG) and cast poly-Si materials and solar cells. With EFG Si they concentrated on chromium-doped materials and cells to determine the role of Cr on solar cell performance. Cast poly-Si samples were not deliberately contaminated. Samples were characterized by cell efficiency, current-voltage, deep-level transient spectroscopy (DLTS), surface photovoltage (SPV), open-circuit voltage decay, secondary ion mass spectrometry, and Fourier transform infrared spectroscopy measurements. They find that Cr forms Cr-B pairs with boron at room temperature and these pairs dissociate into Cr{sub i}{sup +} and B{sup {minus}} during anneals at 210{degrees}C for 10 min. Following the anneal, Cr-B pairs reform at room temperature with a time constant of 230 h. Chromium forms CrSi{sub 2} precipitates in heavily contaminated regions and they find evidence of CrSi{sub 2} gettering, but a lack of chromium segregation or precipitation to grain boundaries and dislocations. Cr-B pairs have well defined DLTS peaks. However, DLTS spectra of other defects are not well defined, giving broad peaks indicative of defects with a range of energy levels in the band gap. In some high-stress, low-efficiency cast poly-Si they detect SiC precipitates, but not in low-stress, high-efficiency samples. SPV measurements result in nonlinear SPV curves in some materials that are likely due to varying optical absorption coefficients due to locally varying stress in the material.

  14. High optical quality polycrystalline indium phosphide grown on metal substrates by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zheng, Maxwell; Yu, Zhibin; Joon Seok, Tae; Chen, Yu-Ze; Kapadia, Rehan; Takei, Kuniharu; Aloni, Shaul; Ager, Joel W.; Wu, Ming; Chueh, Yu-Lun; Javey, Ali

    2012-06-01

    III-V semiconductor solar cells have demonstrated the highest power conversion efficiencies to date. However, the cost of III-V solar cells has historically been too high to be practical outside of specialty applications. This stems from the cost of raw materials, need for a lattice-matched substrate for single-crystal growth, and complex epitaxial growth processes. To address these challenges, here, we explore the direct non-epitaxial growth of thin poly-crystalline films of III-Vs on metal substrates by using metalorganic chemical vapor deposition. This method minimizes the amount of raw material used while utilizing a low cost substrate. Specifically, we focus on InP which is known to have a low surface recombination velocity of carriers, thereby, making it an ideal candidate for efficient poly-crystalline cells where surface/interface properties at the grain boundaries are critical. The grown InP films are 1-3 μm thick and are composed of micron-sized grains that generally extend from the surface to the Mo substrate. They exhibit similar photoluminescence peak widths and positions as single-crystalline InP, as well as excellent crystallinity as examined through TEM and XRD analyses. This work presents poly-InP as a promising absorber layer for future photovoltaics.

  15. Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl2

    NASA Astrophysics Data System (ADS)

    Jensen, S. A.; Burst, J. M.; Duenow, J. N.; Guthrey, H. L.; Moseley, J.; Moutinho, H. R.; Johnston, S. W.; Kanevce, A.; Al-Jassim, M. M.; Metzger, W. K.

    2016-06-01

    For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as silicon and perovskites have produced devices with grains ranging from less than a micron to more than 1 mm. Because the lifetimes in as-deposited polycrystalline CdTe films are typically limited to less than a few hundred picoseconds, a CdCl2 treatment is generally used to improve the lifetime; but this treatment may limit the achievable hole density by compensation. Here, we establish methods to produce CdTe films with grain sizes ranging from hundreds of nanometers to several hundred microns by close-spaced sublimation at industrial manufacturing growth rates. Two-photon excitation photoluminescence spectroscopy shows a positive correlation of lifetime with grain size. Large-grain, as-deposited CdTe exhibits lifetimes exceeding 10 ns without Cl, S, O, or Cu. This uncompensated material allows dopants such as P to achieve a hole density of 1016 cm-3, which is an order of magnitude higher than standard CdCl2-treated devices, without compromising the lifetime.

  16. Zinc oxide thin film acoustic sensor

    SciTech Connect

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah; Mansour, Hazim Louis

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  17. Thin film processing of photorefractive BaTiO3

    NASA Technical Reports Server (NTRS)

    Schuster, Paul R.; Potember, Richard S.

    1991-01-01

    The principle objectives of this ongoing research involve the preparation and characterization of polycrystalline single-domain thin films of BaTiO3 for photorefractive applications. These films must be continuous, free of cracks, and of high optical quality. The two methods proposed are sputtering and sol-gel related processing.

  18. Amorphous and Polycrystalline Photoconductors for Direct Conversion Flat Panel X-Ray Image Sensors

    PubMed Central

    Kasap, Safa; Frey, Joel B.; Belev, George; Tousignant, Olivier; Mani, Habib; Greenspan, Jonathan; Laperriere, Luc; Bubon, Oleksandr; Reznik, Alla; DeCrescenzo, Giovanni; Karim, Karim S.; Rowlands, John A.

    2011-01-01

    In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs). We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se) has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE). Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF) and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI2 and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the HARP has been

  19. Polycrystalline Garnet Porphyroblasts, an EBSD Study

    NASA Astrophysics Data System (ADS)

    Seaton, N. C.; Whitney, D. L.; Anderson, C.; Alpert, A.

    2008-12-01

    Polycrystalline garnet porphyroblasts (PGP's) are significant because their formation provides information about metamorphic crystalline mechanisms, in particular during early stages of crystal growth, which may differ from those governing later stages; and because their existence may affect the chemical and structural evolution of metamorphic rocks. For example, the extent of element exchange between the garnet interior and the matrix may be affected by the presence of grain boundaries within PGP's. There have been several previous studies of PGP's but important questions about them remain; e.g. whether early coalescence is a common method by which garnets crystallize, whether grains rotate during growth to attain an energetically favorable grain-grain contact, and whether deformation and/or precursor minerals or other chemical or mechanical heterogeneities influence the formation of PGP's. PGP's have been detected by us in several different localities including; micaschist from SE Vermont (USA), including locality S35j of Rosenfeld (1968); the Solitude Range (British Columbia, Canada); the Southern Menderes Massif (Turkey); and three zones (garnet, staurolite, kyanite) from the Dutchess County Barrovian sequence in NY (USA). We have identified two types of PGP: cryptic and morphologically distinct. Cryptic PGP have no obvious morphological expression of the high angle boundaries within them and appear to be a single crystal. Morphologically distinct PGP have an obvious depression in the outer grain boundary where it is intersected by the internal grain boundary. Most PGP's contain inclusion trails and the high angle grain boundaries crosscut the trend of these as well as the inclusions themselves. PGP also show major element growth zoning that is not influenced by the internal grain boundaries except in rare cases. PGP's comprise ~ 5-35% of the garnet populations analyzed. More than 95% of the PGP's we have analyzed are comprised of 2-3 domains; the rest contain

  20. Plastic behavior of polycrystalline copper at optical scales of deformation

    NASA Astrophysics Data System (ADS)

    Domber, Jeanette Leah

    Microplasticity is permanent deformation that occurs below the proportional limit of a material. For precision deployable optical spacecraft, it is unknown how microplasticity will affect the performance of the precision structure. An examination of the rolling of thin film optical reflectors indicates a strong dependence of the post-deployed shape on the strain hardening exponent of the material. However, confirmation of the valid extension of the constitutive model used to predict the deployed shape to microscopic strain regimes is necessary. The primary objective of this thesis is threefold: determine the relationship between stress and strain at nano to microstrain levels for representative materials; determine if the relationship between microscopic and macroscopic plastic behavior can be accurately characterized by the Ramberg-Osgood strain hardening constitutive model with a single set of material parameters; and determine if dislocation motion is the root cause of microplastic behavior at room temperature. The test apparatus, with a dynamic force range of 40,000 to 1, measures strains from 0.01 to 1000 parts per million (ppm) of cylindrical amorphous quartz and cold-worked and annealed tempered polycrystalline copper specimen. Elastic behavior in all three materials was consistent with typical values. However, plastic responses were larger than expected. Stresses on the order of 10 to 10,000 kPa (1.45 to 1450 psi) produced permanent strain in all three types of materials ranging from 0.01 to 1 ppm, some of which was attributable to a systematic error in the measurement. Extrapolating macroplastic behavior to lower stress and strain values underestimates the amount of microplasticity observed in the material. Therefore, material property characterization is required at all strain levels that are of concern for a particular application. The similarity in the levels of measured permanent strain for a given stress level between the as-drawn and annealed copper

  1. Orientational tomography of optical axes directions distributions of multilayer biological tissues birefringent polycrystalline networks

    NASA Astrophysics Data System (ADS)

    Zabolotna, Natalia I.; Dovhaliuk, Rostyslav Y.

    2013-09-01

    We present a novel measurement method of optic axes orientation distribution which uses a relatively simple measurement setup. The principal difference of our method from other well-known methods lies in direct approach for measuring the orientation of optical axis of polycrystalline networks biological crystals. Our test polarimetry setup consists of HeNe laser, quarter wave plate, two linear polarizers and a CCD camera. We also propose a methodology for processing of measured optic axes orientation distribution which consists of evaluation of statistical, correlational and spectral moments. Such processing of obtained data can be used to classify particular tissue sample as "healthy" or "pathological". For our experiment we use thin layers of histological section of normal and muscular dystrophy tissue sections. It is shown that the difference between mentioned moments` values of normal and pathological samples can be quite noticeable with relative difference up to 6.26.

  2. Growth, microstructure, optical and electrical properties of sprayed CuInSe{sub 2} polycrystalline films

    SciTech Connect

    Akl, Alaa A.; Afify, H.H.

    2008-06-03

    Polycrystalline thin films of CuInSe{sub 2} have been prepared by chemical spray pyrolysis technique as a function of Cu/In ratio. Incremental growth of the various ratios followed at different substrate temperatures ranging from 548 to 623 K. Characterizations by means of compositional analysis, X-ray diffraction and spectrophotometry measurements have been carried out. Voigt profile method has been used to determine the microstructure parameter (crystallite/domain size and macrostrain). The effect of Cu/In ratio as well as substrate temperature on the optical features (absorption coefficient and band gap) of these films has been investigated. The films of different Cu/In ratios (0.9-1.1) displayed a band gap from 0.92 to 1.025 eV for direct transition. The dark resistivity measurements at room temperature of Cu-rich samples show about five orders of magnitude higher than that of In-rich samples.

  3. Recent technological advances in thin film solar cells

    SciTech Connect

    Ullal, H.S.; Zwelbel, K.; Surek, T.

    1990-03-01

    High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

  4. Effect of copper impurity on polycrystalline silicon solar cells

    NASA Technical Reports Server (NTRS)

    Daud, T.; Koliwad, K. M.

    1978-01-01

    The presence of copper impurity, up to 10 to the 15th atoms/cc, in single crystal silicon has been shown to have no deleterious effect on the p-n junction solar cell performance. However, in polycrystalline silicon, copper atoms tend to migrate to the defect sites because of the structural sensitive properties of copper. This study was undertaken to investigate the influence of this behavior of copper impurity on the performance of p-n junction solar cells fabricated from structurally imperfect silicon. Two sets of polycrystalline silicon substrates containing copper were examined. In one set of samples, copper was incorporated during growth, whereas in the other, copper was diffused. Solar cells were fabricated on both the sets of substrates by a standard process. Dark and light I-V and spectral response characteristics of the cells were measured and compared with copper-free polycrystalline silicon solar cells. The results and the model are discussed.

  5. Multiwavelength excitation Raman scattering of Cu{sub 2}ZnSn(S{sub x}Se{sub 1−x}){sub 4} (0 ≤ x ≤ 1) polycrystalline thin films: Vibrational properties of sulfoselenide solid solutions

    SciTech Connect

    Dimitrievska, Mirjana; Xie, Haibing; Fairbrother, Andrew; Fontané, Xavier; Saucedo, Edgardo; Izquierdo-Roca, Victor; Gurieva, Galina; Pérez-Rodríguez, Alejandro; Schorr, Susan

    2014-07-21

    In this work, Raman spectroscopy and X-ray diffraction were applied together to evaluate the crystal structure and the phonon modes of photovoltaic grade Cu{sub 2}ZnSn(S{sub x}Se{sub 1−x}){sub 4} thin films, leading to a complete characterization of their structural and vibrational properties. Vibrational characterization has been based on Raman scattering measurements performed with different excitation wavelengths and polarization configurations. Analysis of the experimental spectra has permitted identification of 19 peaks, which positions are in good accord with theoretical predictions. Besides, the observation of Cu{sub 2}ZnSnS{sub 4}-like A symmetry peaks related to S vibrations and Cu{sub 2}ZnSnSe{sub 4}-like A symmetry peaks related to Se vibrations, additional Raman peaks, characteristic of the solid solution and previously not reported, are observed, and are attributed to vibrations involving both S and Se anions.

  6. Cu Migration in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christian

    2014-03-12

    An impurity reaction-diffusion model is applied to Cu defects and related intrinsic defects in polycrystalline CdTe for a better understanding of Cu’s role in the cell level reliability of CdTe PV devices. The simulation yields transient Cu distributions in polycrystalline CdTe during solar cell processing and stressing. Preliminary results for Cu migration using available diffusivity and solubility data show that Cu accumulates near the back contact, a phenomena that is commonly observed in devices after back-contact processing or stress conditions.

  7. Software optimization for electrical conductivity imaging in polycrystalline diamond cutters

    SciTech Connect

    Bogdanov, G.; Ludwig, R.; Wiggins, J.; Bertagnolli, K.

    2014-02-18

    We previously reported on an electrical conductivity imaging instrument developed for measurements on polycrystalline diamond cutters. These cylindrical cutters for oil and gas drilling feature a thick polycrystalline diamond layer on a tungsten carbide substrate. The instrument uses electrical impedance tomography to profile the conductivity in the diamond table. Conductivity images must be acquired quickly, on the order of 5 sec per cutter, to be useful in the manufacturing process. This paper reports on successful efforts to optimize the conductivity reconstruction routine, porting major portions of it to NVIDIA GPUs, including a custom CUDA kernel for Jacobian computation.

  8. Growth of Defect-Free 3C-Sic on 4H- and 6H-SIC Mesas Using Step-Free Surface Heteroepitaxy

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Powell, J. Anthony; Trunek, Andrew J.; Huang, Xianrong R.; Dudley, Michael

    2002-01-01

    A new growth process, herein named step-free surface heteroepitaxy, has achieved 3C-SiC films completely free of double positioning boundaries and stacking faults on 4H-SiC and 6H-SiC substrate mesas. The process is based upon the initial 2-dimensional nucleation and lateral expansion of a single island of 3C-SiC on a 4H- or 6H-SiC mesa surface that is completely free of bilayer surface steps. Our experimental results indicate that substrate-epilayer in-plane lattice mismatch (Delta/a = 0.0854% for 3C/4H) is at least partially relieved parallel to the interface in the initial bilayers of the heterofilm, producing an at least partially relaxed 3C-SiC film without dislocations that undesirably thread through the thickness of the epilayer. This result should enable realization of improved 3C-SiC devices.

  9. Raman Microscopic Characterization of Proton-Irradiated Polycrystalline Diamond Films

    NASA Technical Reports Server (NTRS)

    Newton, R. L.; Davidson, J. L.; Lance, M. J.

    2004-01-01

    The microstructural effects of irradiating polycrystalline diamond films with proton dosages ranging from 10(exp 15) to 10(exp 17) H(+) per square centimeter was examined. Scanning Electron Microscopy and Raman microscopy were used to examine the changes in the diamond crystalline lattice as a function of depth. Results indicate that the diamond lattice is retained, even at maximum irradiation levels.

  10. The strength of polycrystalline silicon at the micro- and nano-scales with applications to MEMS

    NASA Astrophysics Data System (ADS)

    Chasiotis, Ioannis

    A new method for tensile testing of thin films by means of an improved apparatus has been developed to measure the elastic properties (Young's modulus, tensile strength) of surface micromachined polycrystalline silicon specimens. The newly designed tensile tester makes use of an Ultraviolet (UV) light curable adhesive to clamp micron-sized specimens. The properties determination utilizes surface topologies of deforming specimens, acquired with an Atomic Force Microscope (AFM), for determining strain fields by means of Digital Image Correlation (DIC). This full-field, direct and local measurements technique provides the capability of testing any type of thin film materials with nanometer resolution. A systematic study of small-scale size effects was thus performed by tensioning elliptically perforated specimens (minimum radius of curvature of 1 mum) so as to: (a) vary the stress concentration with constant radius of curvature, (b) increasing radius of curvature of micronotches relative to the grain size. The results demonstrate a strong influence of the size of the highly strained domain (decreasing notch radii) on the failure strength of MEMS scale specimens, while the effect of varying the stress concentration factor is rather insignificant. In addition, tests performed on unnotched tensile specimens of varying dimensions revealed a specimen size effect by which the values of strength scaled with the specimen length. The Young's modulus, however, is found to be rather insensitive to the specimen dimensions at the scale of microns. Contrary to the common belief that 49% HF wet release represents a safe post-process for manufacturing polycrystalline silicon, this study has clearly identified the release process as a key item in determining thin film failure properties. It is found that surface roughness as characterized by groove formation at the grain boundaries depends distinctly on the HF release time. In addition, while the actual failure mechanism in

  11. The interaction of polycrystalline copper films with dilute aqueous solutions of cupric chloride

    NASA Astrophysics Data System (ADS)

    Walsh, Lois Harper

    1989-10-01

    In the electronics industry, thin films of copper deposited on substrates are used as electrically conductive paths to interconnect semiconductor devices and other computer components. The dissolution of copper in a dilute aqueous cupric chloride solution was studied to achieve an understanding of the role microstructure plays in the dissolution process. A multi-technique approach was taken using combinations of solution chemistry, computer modeling, and microstructural characterization techniques to analyze as-received samples and to monitor the dissolution process. This latter approach allowed reaction rates and activation energies to be calculated from speciation concentrations derived from computer modeling of known thermochemical reactions. In conjunction with the solution analysis, surface techniques were used to analyze the concentration distribution of the various elements after sample exposure to the etchant. The etching characteristics of the polycrystalline thin copper films are dependent on the film's microstructure. A procedure is suggested that will aid future researchers in the correlation of microstructure and dissolution characteristics of different copper samples prior to mass production of metallization for microelectronic circuits.

  12. Fracture properties of polycrystalline silicon - a material for micro-electro-mechanical systems

    SciTech Connect

    Johnson, G.C.; Jones, P.T.

    1995-12-31

    A great deal of research has been performed during the past few years to apply the microfabrication technology used for making integrated circuits to the manufacture of microscopic pressure sensors, accelerometers, and other micro-electro-mechanical systems (MEMS). One result of this work has been the choice of polycrystalline silicon (polysilicon) as a primary structural material employed in MEMS devices, particularly when the polysilicon has been doped with such elements as phosphorus for improved electrical and mechanical properties. As MEMS devices become more relied upon for real world applications, it will be necessary to establish design rules to ensure adequate product lifetimes. However, very little work has been done to deter- mine the failure mechanisms of polysilicon. The work presented here offers an experimental evaluation of the ultimate strength and fracture toughness of polysilicon with regard to the effects of exposure to hydrofluoric acid, a commonly used etchant in MEMS fabrication. A series of micromechanical structures have been designed to measure the strain at fracture and fracture toughness of a thin film. These test structures are patterned onto a thin film of polysilicon covering a silicon wafer using standard microfabrication techniques. Since the structures have dimensions on the order of microns, hundreds of multiple test structures are patterned on a single wafer providing a large amount of statistical data. Results using these structures indicate that prolonged exposure to HF can result in a decrease in the fracture strength of polysilicon.

  13. [Study on the micro-infrared spectra and origin of polycrystalline diamonds from Mengyin kimberlite pipes].

    PubMed

    Yang, Zhi-Jun; Liang, Rong; Zeng, Xiang-Qing; Ge, Tie-Yan; Ai, Qun; Zheng, Yun-Long; Peng, Ming-Sheng

    2012-06-01

    The natural polycrystalline diamonds from the Mengyin kimberlite pipes can be classified as the euhedral faceted polycrystalline diamonds and anhedral rounded polycrystalline diamonds. The results of micro-FTIR spectra characterization of the polycrystalline diamonds show that the concentration of nitrogen is low, varying from 16.69 to 72.81 microgram per gram and is different among different diamond grains or position in polycrystalline diamonds. The euhedral faceted polycrystalline diamonds are Ia AB type and have higher concentration of A-center defects than B-center defects. Most of the anhedral rounded polycrystalline diamonds are Ia AB type and have higher content of B-center defects. A minority of the anhedral rounded polycrystalline diamonds have C-center, A-center and B-center defects simultaneously. The polycrystalline diamonds probably originated from the relatively deeper mantle and were not formed in diamond nucleation stage, but in the diamond growth period or some special conditions after the diamond grains were formed already. Furthermore, the euhedral faceted polycrystalline diamonds were formed slightly later and the anhedral rounded polycrystalline diamonds were formed obviously earlier than the diamond single crystals from the Mengyin kimberlite pipes.

  14. [Study on the micro-infrared spectra and origin of polycrystalline diamonds from Mengyin kimberlite pipes].

    PubMed

    Yang, Zhi-Jun; Liang, Rong; Zeng, Xiang-Qing; Ge, Tie-Yan; Ai, Qun; Zheng, Yun-Long; Peng, Ming-Sheng

    2012-06-01

    The natural polycrystalline diamonds from the Mengyin kimberlite pipes can be classified as the euhedral faceted polycrystalline diamonds and anhedral rounded polycrystalline diamonds. The results of micro-FTIR spectra characterization of the polycrystalline diamonds show that the concentration of nitrogen is low, varying from 16.69 to 72.81 microgram per gram and is different among different diamond grains or position in polycrystalline diamonds. The euhedral faceted polycrystalline diamonds are Ia AB type and have higher concentration of A-center defects than B-center defects. Most of the anhedral rounded polycrystalline diamonds are Ia AB type and have higher content of B-center defects. A minority of the anhedral rounded polycrystalline diamonds have C-center, A-center and B-center defects simultaneously. The polycrystalline diamonds probably originated from the relatively deeper mantle and were not formed in diamond nucleation stage, but in the diamond growth period or some special conditions after the diamond grains were formed already. Furthermore, the euhedral faceted polycrystalline diamonds were formed slightly later and the anhedral rounded polycrystalline diamonds were formed obviously earlier than the diamond single crystals from the Mengyin kimberlite pipes. PMID:22870630

  15. Structure and ionic conductivity of well-aligned polycrystalline sodium titanogallate grown by reactive diffusion

    NASA Astrophysics Data System (ADS)

    Hasegawa, Ryo; Okabe, Momoko; Asaka, Toru; Ishizawa, Nobuo; Fukuda, Koichiro

    2015-09-01

    We prepared the b-axis-oriented polycrystalline Na0.85Ti0.51Ga4.37O8 (NTGO) embedded in Ga2O3-doped Na2Ti4O9 matrix using the reactive diffusion technique. When the sandwich-type Ga2TiO5/NaGaO2/Ga2TiO5 diffusion couple was heated at 1323 K for 24 h, the NTGO polycrystal was readily formed in the presence of a liquid phase. The resulting polycrystalline material was characterized by X-ray diffractometry, electron microscopy and impedance spectroscopy. We mechanically processed the annealed diffusion couple and obtained the thin-plate electrolyte consisting mostly of the grain-aligned NTGO polycrystal. The ionic conductivity (σ) of the electrolyte along the common b-axis direction steadily increased from 1.3×10-4 to 7.3×10-3 S/cm as the temperature increased from 573 to 1073 K. There was a slope change at ca. 792 K for the Arrhenius plot of σ; the activation energies were 0.39 eV above this temperature and 0.57 eV below it. The NTGO showed the crystal structure (space group C2/m) with substantial positional disordering of one of the two Ga sites. The Na+ ions occupied ca. 43% of the Wyckoff position 4i site, the deficiency of which would contribute to the relatively high ionic conductivity along the b-axis. The reactive diffusion could be widely applicable as the novel technique to the preparation of grain-aligned ceramics of multi-component systems.

  16. Dielectric function of Cu(In, Ga)Se2-based polycrystalline materials

    NASA Astrophysics Data System (ADS)

    Minoura, Shota; Kodera, Keita; Maekawa, Takuji; Miyazaki, Kenichi; Niki, Shigeru; Fujiwara, Hiroyuki

    2013-02-01

    The dielectric functions of Cu(In, Ga)Se2(CIGS)-based polycrystalline layers with different Ga and Cu compositions have been determined by applying spectroscopic ellipsometry (SE) in a wide energy range of 0.7-6.5 eV. To suppress SE analysis errors induced by rough surface and compositional fluctuation, quite thin CIGS layers (<60 nm) with high uniformity toward the growth direction have been characterized using a self-consistent SE analysis method. We find that the optical model used in many previous studies is oversimplified particularly for the roughness/overlayer contribution, and all the artifacts arising from the simplified analysis have been removed almost completely in our approach. The CIGS dielectric functions with the variation of the Ga composition [x = Ga/(In + Ga)] revealed that (i) the whole CIGS dielectric function shifts toward higher energies with x, (ii) the band gap increases linearly with x without the band-gap bowing effect, and (iii) the overall absorption coefficients are significantly smaller than those reported earlier. Furthermore, the reduction of the Cu composition [y = Cu/(In + Ga)] leads to (i) the linear increase in the band-edge transition energy and (ii) the decrease in the absorption coefficient, due to the smaller interaction of the Cu 3d orbitals near the valence band maximum in the Cu-deficient layers. When y > 1, on the other hand, the free-carrier absorption increases drastically due to the formation of a semi-metallic CuxSe phase with a constant band gap in the CIGS component. In this study, by using a standard critical-point line-shape analysis, the critical point energies of the CIGS-based layers with different Ga and Cu compositions have been determined. Based on these results, we will discuss the optical transitions in CIGS-based polycrystalline materials.

  17. The state of the art of thin-film photovoltaics

    SciTech Connect

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

  18. Thin Clouds

    Atmospheric Science Data Center

    2013-04-18

    ... their delicate appearance, thin, feathery clouds of ice crystals called cirrus may contribute to global warming. Some scientists ... July 9, 2002 - Thin, feathery clouds of ice crystals over the Caribbean Sea. project:  MISR ...

  19. Ultrathin polycrystalline 6,13-Bis(triisopropylsilylethynyl)-pentacene films

    SciTech Connect

    Jung, Min-Cherl; Zhang, Dongrong; Nikiforov, Gueorgui O.; Lee, Michael V.; Qi, Yabing; Joo Shin, Tae; Ahn, Docheon; Lee, Han-Koo; Baik, Jaeyoon; Shin, Hyun-Joon

    2015-03-15

    Ultrathin (<6 nm) polycrystalline films of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-P) are deposited with a two-step spin-coating process. The influence of spin-coating conditions on morphology of the resulting film was examined by atomic force microscopy. Film thickness and RMS surface roughness were in the range of 4.0–6.1 and 0.6–1.1 nm, respectively, except for small holes. Polycrystalline structure was confirmed by grazing incidence x-ray diffraction measurements. Near-edge x-ray absorption fine structure measurements suggested that the plane through aromatic rings of TIPS-P molecules was perpendicular to the substrate surface.

  20. VLSI readout for imaging with polycrystalline mercuric iodide detectors

    NASA Astrophysics Data System (ADS)

    Turchetta, Renato; Dulinski, Wojtek; Husson, D.; Klein, N.; Riester, J. L.; Schieber, Michael M.; Zuck, A.; Braiman, M.; Melekhov, L.; Nissenbaum, J.; Sanguinetti, S.

    1998-11-01

    Recently polycrystalline mercuric iodide have become available, for room temperature radiation detectors over large areas at low cost. Though the quality of this material is still under improvement, ceramic detectors have been already been successfully tested with dedicated low-noise, low-power mixed signal VLSI electronics which can be used for compact, imaging solutions. The detectors used are of different kinds: microstrips and pixels; of different sizes, up to about 1 square inch; and of different thickness, up to 600 microns. The properties of this first-generation detectors are quite uniform from one detector to another. Also for each single detector the response is quite uniform and no charge loss in the inter-electrode space have been detected. Because of the low cost and of the polycrystallinity, detectors can be potentially fabricated in any size and shape, using standard ceramic technology equipment, which is an attractive feature where low cost and large area applications are needed.

  1. Mechanical instability of monocrystalline and polycrystalline methane hydrates

    PubMed Central

    Wu, Jianyang; Ning, Fulong; Trinh, Thuat T.; Kjelstrup, Signe; Vlugt, Thijs J. H.; He, Jianying; Skallerud, Bjørn H.; Zhang, Zhiliang

    2015-01-01

    Despite observations of massive methane release and geohazards associated with gas hydrate instability in nature, as well as ductile flow accompanying hydrate dissociation in artificial polycrystalline methane hydrates in the laboratory, the destabilising mechanisms of gas hydrates under deformation and their grain-boundary structures have not yet been elucidated at the molecular level. Here we report direct molecular dynamics simulations of the material instability of monocrystalline and polycrystalline methane hydrates under mechanical loading. The results show dislocation-free brittle failure in monocrystalline hydrates and an unexpected crossover from strengthening to weakening in polycrystals. Upon uniaxial depressurisation, strain-induced hydrate dissociation accompanied by grain-boundary decohesion and sliding destabilises the polycrystals. In contrast, upon compression, appreciable solid-state structural transformation dominates the response. These findings provide molecular insight not only into the metastable structures of grain boundaries, but also into unusual ductile flow with hydrate dissociation as observed during macroscopic compression experiments. PMID:26522051

  2. Mechanical instability of monocrystalline and polycrystalline methane hydrates.

    PubMed

    Wu, Jianyang; Ning, Fulong; Trinh, Thuat T; Kjelstrup, Signe; Vlugt, Thijs J H; He, Jianying; Skallerud, Bjørn H; Zhang, Zhiliang

    2015-01-01

    Despite observations of massive methane release and geohazards associated with gas hydrate instability in nature, as well as ductile flow accompanying hydrate dissociation in artificial polycrystalline methane hydrates in the laboratory, the destabilising mechanisms of gas hydrates under deformation and their grain-boundary structures have not yet been elucidated at the molecular level. Here we report direct molecular dynamics simulations of the material instability of monocrystalline and polycrystalline methane hydrates under mechanical loading. The results show dislocation-free brittle failure in monocrystalline hydrates and an unexpected crossover from strengthening to weakening in polycrystals. Upon uniaxial depressurisation, strain-induced hydrate dissociation accompanied by grain-boundary decohesion and sliding destabilises the polycrystals. In contrast, upon compression, appreciable solid-state structural transformation dominates the response. These findings provide molecular insight not only into the metastable structures of grain boundaries, but also into unusual ductile flow with hydrate dissociation as observed during macroscopic compression experiments. PMID:26522051

  3. Compton profile study of polycrystalline ZnBr{sub 2}

    SciTech Connect

    Dhaka, M. S.; Sharma, G.; Mishra, M. C.; Kothari, R. K.; Sharma, B. K.

    2010-12-01

    The first ever Compton profile study of polycrystalline ZnBr{sub 2} is presented in this paper. The measurement of polycrystalline sample of ZnBr{sub 2} is performed using 59.54 keV gamma-rays emanating from an {sup 241}Am radioisotope. Theoretical calculations are performed following the Ionic model calculations for a number of configurations Zn{sup +x}Br{sub 2}{sup -x/2}(0.0{<=}x{<=}2.0 in step of 0.5) utilizing free atom profiles. The ionic model suggest transfer of 2.0 electrons from 4 s state of Zn to 4 p state of two Br atoms. The autocorrelation function B(z) is also derived from experiment and the most favoured ionic valence Compton profiles.

  4. Ultraprecision Machining Characteristics of Poly-Crystalline Germanium

    NASA Astrophysics Data System (ADS)

    Yan, Jiwang; Takahashi, Yasunori; Tamaki, Jun'Ichi; Kubo, Akihiko; Kuriyagawa, Tsunemoto; Sato, Yutaka

    Germanium is an excellent infrared optical material. On most occasions, single-crystalline germanium is used as optical lens substrate because its homogeneous structure is beneficial for fabricating uniform optical surfaces. In this work, we attempt to use poly crystals as lens substrates instead of single crystals, which may lead to a significant reduction in production cost. We conducted ultraprecision cutting experiments on poly-crystalline germanium to examine the microscopic machinability. The crystal orientations of specific crystal grains were characterized, and the machining characteristics of these crystal grains including surface textures, cutting forces, and grain boundary steps were investigated under various machining conditions. It was possible to produce uniformly ductile-cut surfaces cross all crystal grains by using an extremely small undeformed chip thickness (˜ 80nm) under negative tool rake angles (˜ -45°). This work indicates the possibility of fabricating high-quality infrared optical components from poly-crystalline germanium.

  5. Further development and application of polycrystalline metal whiskers

    NASA Technical Reports Server (NTRS)

    Schladitz, H. J.

    1979-01-01

    High strength metal whiskers have a larger versatile field of application than monocrystalline whiskers. Although polycrystalline metal whiskers can be used for composites, preferably by extrusion in thermoplastics or by infiltration of resins or metals into whisker networks, the chief application at present may be the production and various use of whisker networks. Such networks can be produced up to high degrees of porosity and besides high mechanical strength, they have high inside surfaces and high electric conductivity. There are for instance, applications concerning construction of electrodes for batteries and fuel cells, catalysts and also new heat-exchanger material, capable of preparing fuel oil and gasoline in order to assist a high-efficiency combustion. The technical application of polycrystalline metal whiskers require their modification as well as the construction of a pilot production unit.

  6. Spatially-Resolved Studies of Grain-Boundary Effects in Polycrystalline Solar Cells Using Micro-Photoluminescence and Near-Field Microscopy

    SciTech Connect

    Smith, S.; Dhere, R.; Gessert, T.; Stradins, P.; Mascarenhas, A.

    2005-01-01

    Photoluminescence and photocurrent spectroscopies combined with diffraction-limited and sub- diffraction-limited spatial resolution are achieved via micro-photoluminescence (m-PL) and near-field microscopy (NSOM). These methods are used to examine the photo-response of individual grain boundaries in thin-film, polycrystalline solar cells at room and cryogenic temperatures. A systematic m-PL study of the effect of CdCl2-treatment on recombination in CdTe/CdS solar cell structures of varying thickness directly reveals the grain-boundary and surface passivation action of this important post-growth processing step. We achieve 50nm (l/10) spatial resolution in near-field Optical Beam Induced Current imaging (n-OBIC) of polycrystalline silicon solar cells using NSOM, at varying stages of silicon nitride grain-boundary passivation, and measure lateral variations in photo-response of CdTe/CdS solar cells with subwavelength spatial resolution.

  7. A characterization study of a hydroxylated polycrystalline tin oxide surface

    NASA Technical Reports Server (NTRS)

    Hoflund, Gar B.; Grogan, Austin L., Jr.; Asbury, Douglas A.; Schryer, David R.

    1989-01-01

    In this study Auger electron spectroscopy, electron spectroscopy for chemical analysis (ESCA) and electron-stimulated desorption (ESD) have been used to examine a polycrystalline tin oxide surface before and after annealing in vacuum at 500 C. Features due to surface hydroxyl groups are present in both the ESCA and ESD spectra, and ESD shows that several chemical states of hydrogen are present. Annealing at 500 C causes a large reduction in the surface hydrogen concentration but not complete removal.

  8. Synthesis and mechanical properties of nano-polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Couvy, H.; Chen, J.

    2010-12-01

    The sample of nano-polycrystalline diamond (NPD) has been synthesized at the Center for the Study of Matter at Extreme Conditions using a 500t multi-anvil press equipped with a Walker module. A rod of polycrystalline graphite (99.9995%; Alfa Aesar) was used as starting material. The sample was directly inserted into the Re furnace of a 8mm octahedral edge length cell assembly. Tungsten carbide cubes with 3mm truncation edge length were used as anvils. The graphite sample converted directly into diamond at 19 GPa and 2400C. The temperature was maintained for 30 seconds. The recovered sample is transparent indicating that all graphite has been converted into cubic diamond. Raman spectroscopy and X-ray diffraction confirm the total conversion and purity of the sample. The latter has been mounted in epoxy and was finely polished for nano-indentation hardness test using metal-bonding diamond abrasive disks. In this study we do not measure the hardness of the material using the traditional method (impression hardness) which consist in measuring the dimension of the indent impression after indentation. We use depth-sensing nanoindentation. Our indenter used is equipped with piezo controller which monitor dynamically the depth of the indent during the hardness test. This method is considered to be more accurate and more adapted to elastic material. The hardness test has been performed using a Hysitron TriboIndenter. The probe is a diamond Berkovich tip (three sided pyramid) with 100 nm tip radius. NPD hardness and Young’s modulus has been compared with commercially available polycrystalline superhard material used in high-pressure devices as anvils: a cubic boron nitrite anvil (cBN) from Linatec (Ukraine) and a sintered polycrystalline diamond anvil (PCD) from Ringwood Superabrasives Pty Ltd (USA). The results show the superior hardness and elastic properties of NPD on cBN and PCD.

  9. Paths for current flow in polycrystalline high temperature superconductors

    SciTech Connect

    Kroeger, D.M.; Goyal, A.; Specht, E.D.

    1995-12-01

    Determinations from x-ray and electron microdiffraction studies of the populations and geometrical arrangements of small angle grain boundaries in Bi-2223 and Bi-2212 conductors and Tl-1223 deposits suggest that current flow in these polycrystalline materials is percolative in character. Comparison of measured misorientation angle distributions to calculated distributions suggest that not only texture but also grain boundary energy is important in increasing the number of small angle grain boundaries.

  10. In Situ Graphene Growth Dynamics on Polycrystalline Catalyst Foils

    PubMed Central

    2016-01-01

    The dynamics of graphene growth on polycrystalline Pt foils during chemical vapor deposition (CVD) are investigated using in situ scanning electron microscopy and complementary structural characterization of the catalyst with electron backscatter diffraction. A general growth model is outlined that considers precursor dissociation, mass transport, and attachment to the edge of a growing domain. We thereby analyze graphene growth dynamics at different length scales and reveal that the rate-limiting step varies throughout the process and across different regions of the catalyst surface, including different facets of an individual graphene domain. The facets that define the domain shapes lie normal to slow growth directions, which are determined by the interfacial mobility when attachment to domain edges is rate-limiting, as well as anisotropy in surface diffusion as diffusion becomes rate-limiting. Our observations and analysis thus reveal that the structure of CVD graphene films is intimately linked to that of the underlying polycrystalline catalyst, with both interfacial mobility and diffusional anisotropy depending on the presence of step edges and grain boundaries. The growth model developed serves as a general framework for understanding and optimizing the growth of 2D materials on polycrystalline catalysts. PMID:27576749

  11. Optical Properties of Anisotropic Polycrystalline Ce+3 activated LSO

    PubMed Central

    Roy, Sudesna; Lingertat, Helmut; Brecher, Charles; Sarin, Vinod

    2012-01-01

    Polycrystalline cerium activated lutetium oxyorthosilicate (LSO:Ce) is highly desirable technique to make cost effective and highly reproducible radiation detectors for medical imaging. In this article methods to improve transparency in polycrystalline LSO:Ce were explored. Two commercially available powders of different particulate sizes (average particle size 30 and 1500 nm) were evaluated for producing dense LSO:Ce by pressure assisted densification routes, such as hot pressing and hot isostatic pressing. Consolidation of the powders at optimum conditions produced three polycrystalline ceramics with average grain sizes of 500 nm, 700 and 2000 nm. Microstructural evolution studies showed that for grain sizes larger than 1 µm, anisotropy in thermal expansion coefficient and elastic constants of LSO, resulted in residual stress at grain boundaries and triple points that led to intragranular microcracking. However, reducing the grain size below 1 µm effectively avoids microcracking, leading to more favorable optical properties. The optical scattering profiles generated by a Stover scatterometer, measured by a He-Ne laser of wavelength 633 nm, showed that by reducing the grain size from 2 µm to 500 nm, the in-line transmission increased by a factor of 103. Although these values were encouraging and showed that small changes in grain size could increase transmission by almost 3 orders of magnitude, even smaller grain sizes need to be achieved in order to get truly transparent material with high in-line transmission. PMID:23505329

  12. Stress-dependent ultrasonic scattering in polycrystalline materials.

    PubMed

    Kube, Christopher M; Turner, Joseph A

    2016-02-01

    Stress-dependent elastic moduli of polycrystalline materials are used in a statistically based model for the scattering of ultrasonic waves from randomly oriented grains that are members of a stressed polycrystal. The stress is assumed to be homogeneous and can be either residual or generated from external loads. The stress-dependent elastic properties are incorporated into the definition of the differential scattering cross-section, which defines how strongly an incident wave is scattered into various directions. Nine stress-dependent differential scattering cross-sections or scattering coefficients are defined to include all possibilities of incident and scattered waves, which can be either longitudinal or (two) transverse wave types. The evaluation of the scattering coefficients considers polycrystalline aluminum that is uniaxially stressed. An analysis of the influence of incident wave propagation direction, scattering direction, frequency, and grain size on the stress-dependency of the scattering coefficients follows. Scattering coefficients for aluminum indicate that ultrasonic scattering is much more sensitive to a uniaxial stress than ultrasonic phase velocities. By developing the stress-dependent scattering properties of polycrystals, the influence of acoustoelasticity on the amplitudes of waves propagating in stressed polycrystalline materials can be better understood. This work supports the ongoing development of a technique for monitoring and measuring stresses in metallic materials. PMID:26936563

  13. Stress-dependent ultrasonic scattering in polycrystalline materials.

    PubMed

    Kube, Christopher M; Turner, Joseph A

    2016-02-01

    Stress-dependent elastic moduli of polycrystalline materials are used in a statistically based model for the scattering of ultrasonic waves from randomly oriented grains that are members of a stressed polycrystal. The stress is assumed to be homogeneous and can be either residual or generated from external loads. The stress-dependent elastic properties are incorporated into the definition of the differential scattering cross-section, which defines how strongly an incident wave is scattered into various directions. Nine stress-dependent differential scattering cross-sections or scattering coefficients are defined to include all possibilities of incident and scattered waves, which can be either longitudinal or (two) transverse wave types. The evaluation of the scattering coefficients considers polycrystalline aluminum that is uniaxially stressed. An analysis of the influence of incident wave propagation direction, scattering direction, frequency, and grain size on the stress-dependency of the scattering coefficients follows. Scattering coefficients for aluminum indicate that ultrasonic scattering is much more sensitive to a uniaxial stress than ultrasonic phase velocities. By developing the stress-dependent scattering properties of polycrystals, the influence of acoustoelasticity on the amplitudes of waves propagating in stressed polycrystalline materials can be better understood. This work supports the ongoing development of a technique for monitoring and measuring stresses in metallic materials.

  14. Mechanical properties of irradiated multi-phase polycrystalline BCC materials

    NASA Astrophysics Data System (ADS)

    Song, Dingkun; Xiao, Xiazi; Xue, Jianming; Chu, Haijian; Duan, Huiling

    2015-04-01

    Structure materials under severe irradiations in nuclear environments are known to degrade because of irradiation hardening and loss of ductility, resulting from irradiation-induced defects such as vacancies, interstitials and dislocation loops, etc. In this paper, we develop an elastic-viscoplastic model for irradiated multi-phase polycrystalline BCC materials in which the mechanical behaviors of individual grains and polycrystalline aggregates are both explored. At the microscopic grain scale, we use the internal variable model and propose a new tensorial damage descriptor to represent the geometry character of the defect loop, which facilitates the analysis of the defect loop evolutions and dislocation-defect interactions. At the macroscopic polycrystal scale, the self-consistent scheme is extended to consider the multiphase problem and used to bridge the individual grain behavior to polycrystal properties. Based on the proposed model, we found that the work-hardening coefficient decreases with the increase of irradiation-induced defect loops, and the orientation/loading dependence of mechanical properties is mainly attributed to the different Schmid factors. At the polycrystalline scale, numerical results for pure Fe match well with the irradiation experiment data. The model is further extended to predict the hardening effect of dispersoids in oxide-dispersed strengthened steels by the considering the Orowan bowing. The influences of grain size and irradiation are found to compete to dominate the strengthening behaviors of materials.

  15. Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates

    SciTech Connect

    Seo, Won-Oh; Kim, Jihyun; Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol; Kim, Donghwan

    2014-08-25

    We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2 MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

  16. X-ray diffraction characterization of thin superconductive films

    SciTech Connect

    Kozaczek, K.J.; Watkins, T.R.; Book, G.W.; Carter, W.B.

    1995-12-31

    The physical and mechanical properties of thin films are often different from the properties of bulk material and are dictated by the film/substrate orientation relationship, crystal anisotropy and crystalgraphic texture of the film. X-ray diffraction texture analysis provides information about preferential film growth and can be used for optimization of deposition parameters and prediction of properties of thin films. An x-ray back reflection technique using the Braga-Brentano geometry with experimental corrections for absorption and defocusing was used to study thin ceramic films deposited by combustion chemical vapor deposition (CCVD). The film/substrate orientation relationships of YBa{sub 2}Cu{sub 3}O{sub x} (YBCO) superconducting thin films deposited via CCVD on single crystal MgO and polycrystalline silver substrates were studied. The as-deposited films on single crystal (100) MgO substrates showed strong preferential growth with the basal plane parallel to the substrate surface (c-axis up growth). Texture analysis showed two in-plane alignment orientations of the film with respect to the substrate, with YBCO [100] and [110] aligned with the [100] MgO substrate. YBCO films deposited on cold-rolled polycrystalline silver displayed c-axis up growth indicating that the orientation of the polycrystalline substrate (brass type texture) did not induce detectable in-plane preferential growth of the YBCO.

  17. Atmospheric and Aqueous Deposition of Polycrystalline Metal Oxides Using Mist-CVD for Highly Efficient Inverted Polymer Solar Cells.

    PubMed

    Zhu, Xiaodan; Kawaharamura, Toshiyuki; Stieg, Adam Z; Biswas, Chandan; Li, Lu; Ma, Zhu; Zurbuchen, Mark A; Pei, Qibing; Wang, Kang L

    2015-08-12

    Large scale, cost-effective processing of metal oxide thin films is critical for the fabrication of many novel thin film electronics. To date, however, most of the reported solution-based techniques require either extended thermal anneals or additional synthetic steps. Here we report mist chemical vapor deposition as a solution-based, readily scalable, and open-air method to produce high-quality polycrystalline metal oxide thin films. Continuous, smooth, and conformal deposition of metal oxide thin films is achieved by tuning the solvent chemistry of Leidenfrost droplets to promote finer control over the surface-local dissociation process of the atomized zinc-bearing precursors. We demonstrate the deposited ZnO as highly efficient electron transport layers for inverted polymer solar cells to show the power of the approach. A highest efficiency of 8.7% is achieved with a fill factor of 73%, comparable to that of conventional so-gel ZnO, which serves as an indication of the efficient vertical transport and electron collection achievable using this material. PMID:26146797

  18. Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988

    NASA Technical Reports Server (NTRS)

    Costogue, E. N.; Ferber, R.; Lutwack, R.; Lorenz, J. H.; Pellin, R.

    1984-01-01

    Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.

  19. Radiation-Induced Reduction of Ceria in Single and Polycrystalline Thin Films

    SciTech Connect

    Kumar, Amit; Devanathan, Ramaswami; Shutthanandan, V.; Kuchibhatla, Satyanarayana V N T; Karakoti, Ajay S.; Yang, Yong; Thevuthasan, Suntharampillai; Seal, Sudipta

    2012-01-12

    Ceria (CeO{sub 2}) is a technologically important ceramic material with a wide range of neoteric applications in catalysis, solid oxide fuel cells, oxygen gas sensors, hydrogen production, and ultraviolet shielding. Recent research has revealed promising biomedical applications of ceria. Nanoparticles of ceria have been shown to protect healthy cells from radiation-induced cellular damage. The mechanisms governing the radioprotection characteristics of ceria nanoparticles are not well understood and it has been hypothesized that reversible switching between Ce{sup 4+} and Ce{sup 3+} states may enable ceria nanoparticles to mop up free radicals.

  20. Device Physics of Thin-Film Polycrystalline Cells and Modules: Final Report, February 1998 -- August 2001

    SciTech Connect

    Sites, J. R.

    2002-01-01

    This report describes the basic measurements of CdTe and CI(G)S solar cells fabricated at a number of collaborating laboratories. The first area of emphasis has been to quantitatively deduce the loss mechanisms in these cells, and to make appropriate comparisons that illuminate where progress in being made. Cells evaluated include those at or near record efficiencies and those made with new processing strategies. A second area of emphasis, the role of impurities, has focused on sodium in CIS. Cells made with varying amounts of sodium added during CIS deposition were fabricated at NREL using four types of substrates. Best performance was achieved with 0.01 to 0.1 at% sodium. The third area of study has been small-spot measurement of micro-nonuniformities. A new facility was built to focus a laser beam onto a solar cell with 1-um beam size, 1-um resolution and repeatability, and one-sun intensity. Specific projects to date have focused on CdTe and have included the local effect of CdCl2, local intermixing of sulfur, and the effect of temperature-induced stress. Documentation of cell changes at elevated temperatures has been the fourth area of study. Changes seen in CdTe J-V curves are almost certainly related to diffusion of copper from the back contact, but in most cases an activation-energy model predicts sufficient stability for a 30-year product lifetime. Transients seen in some CIS cells are primarily seen in fill-factor and are primarily driven by voltage bias rather than illumination condition. The final area of emphasis has been numerical simulations of CdTe and CI(G)S cells. Results with CdTe are able to replicate experimental data, have explained the effects of partial overlap of the primary junction with the back contact, and have shown how variations in carrier density, carrier lifetime, and CdTe layer thickness impact cell performance.

  1. Unraveling Charge Carriers Generation, Diffusion, and Recombination in Formamidinium Lead Triiodide Perovskite Polycrystalline Thin Film.

    PubMed

    Piatkowski, Piotr; Cohen, Boiko; Ponseca, Carlito S; Salado, Manuel; Kazim, Samrana; Ahmad, Shahzada; Sundström, Villy; Douhal, Abderrazzak

    2016-01-01

    We report on studies of the formamidinium lead triiodide (FAPbI3) perovskite film using time-resolved terahertz (THz) spectroscopy (TRTS) and flash photolysis to explore charge carriers generation, migration, and recombination. The TRTS results show that upon femtosecond excitation above the absorption edge, the initial high photoconductivity (∼75 cm(2) V(-1) s(-1)) remains constant at least up to 8 ns, which corresponds to a diffusion length of 25 μm. Pumping below the absorption edge results in a mobility of 40 cm(2) V(-1) s(-1) suggesting lower mobility of charge carriers located at the bottom of the conduction band or shallow sub-bandgap states. Furthermore, analysis of the THz kinetics reveals rising components of <1 and 20 ps, reflecting dissociation of excitons having different binding energies. Flash photolysis experiments indicate that trapped charge carriers persist for milliseconds. PMID:26703885

  2. Thin film poly-crystalline silicon fabrication based on Rapid Thermal Annealing (RTA) process

    NASA Astrophysics Data System (ADS)

    Qian, Jun; Li, Jirong; Liao, Yang; Shi, Weimin; Kuang, Huahui; Ming, Xiuchun; Liu, Jin; Jin, Jing; Qin, Juan

    2013-12-01

    Rapid Thermal Annealing (RTA) process was introduced to the experiment of Aluminum-induced crystallization of a-Si, based on sputtering method, on low cost glass substrate. A stack of glass/Al (150 nm)/Si (220 nm) was deposited by sputtering sequentially. Samples were annealed under RTA process, then annealed in the tube annealing furnace at 400 °C for 5 h. The grain crystallization was inspected by optical microscopy (OM), ,Raman spectroscopy, X-ray diffraction (XRD),and energy dispersive spectroscopy (EDS). The preferential orientation (111) was observed, with a Raman Peak at 520.8cm-1, Different annealing periods were discussed.

  3. Sulfur diffusion in polycrystalline thin-film CdTe solar cells

    SciTech Connect

    Aslan, M.H.; Song, W.; Tang, T.; Mao, D.; Collins, R.T.; Levi, D.H.; Ahrenkiel, R.K.; Lindstrom, S.C.; Johnson, M.B.

    1998-12-31

    X-ray diffraction and photoluminescence measurements have been used to characterize the diffusion of S into CdTe during post growth annealing of CdTe solar cells. For anneals at 410 C in the presence of CdCl{sub 2}, evidence that both a CdTe{sub 1{minus}x}S{sub x} phase and nearly-pure CdTe are present near the back contact is observed. The ternary phase becomes more prominent and the S concentration increases with depth reaching roughly 4--5% near the CdS interface. Much less diffusion is observed at 350 C while for a 460 C anneal, CdTe{sub 1{minus}x}S{sub x} with a S concentration near 5% is found throughout the layer. The presence of CdCl{sub 2} during the anneal enhances the interdiffusion.

  4. Research on polycrystalline thin film submodules based on CuInSe sub 2 materials

    SciTech Connect

    Catalano, A.; Arya, R.; Carr, L.; Fieselmann, B.; Lommasson, T.; Podlesny, R.; Russell, L.; Skibo, S.; Rothwarf, A.; Birkmire, R. )

    1992-05-01

    This report describes progress during the first year of a three-year research program to develop 12%-efficient CuInSe{sub 2} (CIS) submodules with area greater than 900 cm{sup 2}. To meet this objective, the program was divided into five tasks: (1) windows, contacts, substrates; (2) absorber material; (3) device structure; (4) submodule design and encapsulation; and (5) process optimization. In the first year of the program, work was concentrated on the first three tasks with an objective to demonstrate a 9%-efficient CIS solar cell. 7 refs.

  5. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report

    SciTech Connect

    Trefny, J.U.; Mao, D.

    1998-01-01

    During the past year, Colorado School of Mines (CSM) researchers performed systematic studies of the growth and properties of electrodeposition CdS and back-contact formation using Cu-doped ZnTe, with an emphasis on low Cu concentrations. CSM also started to explore the stability of its ZnTe-Cu contacted CdTe solar cells. Researchers investigated the electrodeposition of CdS and its application in fabricating CdTe/CdS solar cells. The experimental conditions they explored in this study were pH from 2.0 to 3.0; temperatures of 80 and 90 C; CdCl{sub 2} concentration of 0.2 M; deposition potential from {minus}550 to {minus}600 mV vs. Ag/AgCl electrode; [Na{sub 2}S{sub 2}O{sub 4}] concentration between 0.005 and 0.05 M. The deposition rate increases with increase of the thiosulfate concentration and decrease of solution pH. Researchers also extended their previous research of ZnTe:Cu films by investigating films doped with low Cu concentrations (< 5 at. %). The low Cu concentration enabled them to increase the ZnTe:Cu post-annealing temperature without causing excessive Cu diffusion into CdTe or formation of secondary phases. The effects of Cu doping concentration and post-deposition annealing temperature on the structural, compositional, and electrical properties of ZnTe were studied systematically using X-ray diffraction, atomic force microscopy, electron microprobe, Hall effect, and conductivity measurements.

  6. [Research on the polycrystalline CdS thin films prepared by close-spaced sublimation].

    PubMed

    Yang, Ding-Yu; Xia, Geng-Pei; Zheng, Jia-Gui; Feng, Liang-Huan; Cai, Ya-Ping

    2009-01-01

    In the present paper, the factors of influence on the deposition rate of CdS films prepared by close-spaced sublimation (CSS) were first studied systematically, and it was found from the experiments that the deposition rate increased with the raised temperature of sublimation source, while decreased with the raised substrate temperature and the deposition pressure. The structure, morphology and light transmittance of the prepared samples were tested subsequently, and the results show: (1) The CdS films deposited under different oxygen partial pressure all present predominating growth lattice orientation (103), and further more the films will be strengthened after annealed under CdCl2 atmosphere. (2) The AFM images of CdS show that the films are compact and uniform in grain diameter, and the grain size becomes larger with the increased substrate temperature. Along with it, the film roughness was also augmented. (3) The transmittance in the shortwave region of visible light through the CdS films would be enhanced when its thickness is reduced, and that will help improve the shortwave spectral response of CdTe solar cells. Finally, the prepared CdS films were employed to fabricate CdTe solar cells, which have achieved a conversion efficiency of 10.29%, and thus the feasibility of CSS process in the manufacture of CdTe solar cells was validated primarily.

  7. Phosphorus Doping Using Electron Cyclotron Resonance Plasma for Large-Area Polycrystalline Silicon Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Kakinuma, Hiroaki; Mohri, Mikio; Tsuruoka, Taiji

    1994-01-01

    We have investigated phosphorus doping using an electron cyclotron resonance (ECR) plasma, for application to the poly-Si driving circuits of liquid crystal displays or image sensors. The PH3/He was ionized and accelerated to poly-Si and c-Si substrates with a self bias of -220 V. The P concentration, as detected by secondary ion mass spectroscopy (SIMS), is ˜5×1021 cm-3 at the surface, which decayed to ˜1017 cm-3 within 50 100 nm depth. The surface is found to be etched during doping. The etching is restored by adding a small amount of SiH4 and the sheet resistance R s decreases. The optimized as-irradiated R s is ˜ 1× 105 Ω/\\Box and 1.7× 102 Ω/\\Box for poly-Si and (110) c-Si, respectively. The dependence of R s on the substrates and the anomalous diffusion constants derived from SIMS are also discussed.

  8. Improved Intrinsic Stability of CdTe Polycrystalline Thin Film Devices

    SciTech Connect

    Albin, D.; Berniard, T.; McMahon, T.; Noufi, R.; Demtsu, S.

    2005-01-01

    A systems-driven approach linking upstream solar cell device fabrication history with downstream performance and stability has been applied to CdS/CdTe small-area device research. The best resulting initial performance (using thinner CdS, thicker CdTe, no oxygen during VCC, and the use of NP etch) was shown to simultaneously correlate with poor stability. Increasing the CdS layer thickness significantly improved stability at only a slight decrease in overall performance. It was also determined that cell perimeter effects can accelerate degradation in these devices. A ''margined'' contact significantly reduces the contribution of edge shunting to degradation, and thus yields a more accurate determination of the intrinsic stability. Pspice discrete element models demonstrate how spatially localized defects can effectively dominate degradation. Mitigation of extrinsic shunting improved stabilized efficiency degradation levels (SEDL) to near 20% in 100 C tests. Further process optimization to reduce intrinsic effects improved SEDL to better than 10% at the same stress temperatures and times.

  9. Room temperature ferroelectricity in continuous croconic acid thin films

    NASA Astrophysics Data System (ADS)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Zhang, Xiaozhe; Wang, Xiao; Yu, Le; Ahmadi, Zahra; Costa, Paulo S.; DiChiara, Anthony D.; Cheng, Xuemei; Gruverman, Alexei; Enders, Axel; Xu, Xiaoshan

    2016-09-01

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50-100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  10. Microstructure and texture analyses of polycrystalline ice during hot torsion

    NASA Astrophysics Data System (ADS)

    Journaux, B.; Montagnat, M.; Gest, L.; Barou, F.; Chauve, T.

    2015-12-01

    Water ice Ih is a material with very high plastic anisotropy where deformation is mainly accommodated by dislocation glide on the (0001) plane. This anisotropy gives rise to strong strain incompatibilities between grains during deformation, and therefore impacts texture and microstructure evolution. Accurate understanding of ice mechanical properties is significant for several areas of research such as glaciology, planetary sciences, but also in geosciences and metallurgy as ice can be seen as a model material with easier experimental handling at near melting temperatures. In the present study, we used torsion experiments to study non-coaxial shear strain (γ), very common in natural environments, up to very high values of γ. Numerous studies determined microstructure and texture evolution in polycrystalline assemblage submitted to torsion (metallic alloys and geological materials) but a very limited number focused on polycrystalline ice. Full cylinders of randomly oriented polycrystalline ice (grain size ~ 1 mm) were placed in a torsion apparatus and deformed under ductile regime under constant imposed torque at 266K (0.97 Tf). Macroscopic shear was monitored using a LVDT device or a rotary encoder. Several torsion tests with maximal shear strain up to γmax = 1 were performed. Tangent and axial sections were analyzed ex-situ using Automatic Ice Texture Analyzer (AITA) and Electron BackScatter Diffraction (EBSD). We were able to confirm the previously observed bimodal preferred orientation of the basal slip plane. Macroscopic strain evolution γ(t) displays a weakening after γmax = 0.04 (ɛmax ≃ 2 %), due to the beginning of dynamic recrystallization (DRX) processes. EBSD data provide novel informations on the microstructure that suggest very efficient grain boundary migration processes. In particular, we were able to measure differences of intra-granular misorientations density between the two ODF maxima populations that can highlight the role of DRX

  11. Polycrystalline lead selenide: the resurgence of an old infrared detector

    NASA Astrophysics Data System (ADS)

    Vergara, G.; Montojo, M. T.; Torquemada, M. C.; Rodrigo, M. T.; Sánchez, F. J.; Gómez, L. J.; Almazán, R. M.; Verdú, M.; Rodríguez, P.; Villamayor, V.; Álvarez, M.; Diezhandino, J.; Plaza, J.; Catalán, I.

    2007-06-01

    The existing technology for uncooled MWIR photon detectors based on polycrystalline lead salts is stigmatized for being a 50-year-old technology. It has been traditionally relegated to single-element detectors and relatively small linear arrays due to the limitations imposed by its standard manufacture process based on a chemical bath deposition technique (CBD) developed more than 40 years ago. Recently, an innovative method for processing detectors, based on a vapour phase deposition (VPD) technique, has allowed manufacturing the first 2D array of polycrystalline PbSe with good electro optical characteristics. The new method of processing PbSe is an all silicon technology and it is compatible with standard CMOS circuitry. In addition to its affordability, VPD PbSe constitutes a perfect candidate to fill the existing gap in the photonic and uncooled IR imaging detectors sensitive to the MWIR photons. The perspectives opened are numerous and very important, converting the old PbSe detector in a serious alternative to others uncooled technologies in the low cost IR detection market. The number of potential applications is huge, some of them with high commercial impact such as personal IR imagers, enhanced vision systems for automotive applications and other not less important in the security/defence domain such as sensors for active protection systems (APS) or low cost seekers. Despite the fact, unanimously accepted, that uncooled will dominate the majority of the future IR detection applications, today, thermal detectors are the unique plausible alternative. There is plenty of room for photonic uncooled and complementary alternatives are needed. This work allocates polycrystalline PbSe in the current panorama of the uncooled IR detectors, underlining its potentiality in two areas of interest, i.e., very low cost imaging IR detectors and MWIR fast uncooled detectors for security and defence applications. The new method of processing again converts PbSe into an

  12. Ion beam nitriding of single and polycrystalline austenitic stainless steel

    SciTech Connect

    Abrasonis, G.; Riviere, J.P.; Templier, C.; Declemy, A.; Pranevicius, L.; Milhet, X.

    2005-04-15

    Polycrystalline and single crystalline [orientations (001) and (011)] AISI 316L austenitic stainless steel was implanted at 400 deg. C with 1.2 keV nitrogen ions using a high current density of 0.5 mA cm{sup -2}. The nitrogen distribution profiles were determined using nuclear reaction analysis (NRA). The structure of nitrided polycrystalline stainless steel samples was analyzed using glancing incidence and symmetric x-ray diffraction (XRD) while the structure of the nitrided single crystalline stainless steel samples was analyzed using x-ray diffraction mapping of the reciprocal space. For identical treatment conditions, it is observed that the nitrogen penetration depth is larger for the polycrystalline samples than for the single crystalline ones. The nitrogen penetration depth depends on the orientation, the <001> being more preferential for nitrogen diffusion than <011>. In both type of samples, XRD analysis shows the presence of the phase usually called 'expanded' austenite or {gamma}{sub N} phase. The lattice expansion depends on the crystallographic plane family, the (001) planes showing an anomalously large expansion. The reciprocal lattice maps of the nitrided single crystalline stainless steel demonstrate that during nitriding lattice rotation takes place simultaneously with lattice expansion. The analysis of the results based on the presence of stacking faults, residual compressive stress induced by the lattice expansion, and nitrogen concentration gradient indicates that the average lattice parameter increases with the nitrided layer depth. A possible explanation of the anomalous expansion of the (001) planes is presented, which is based on the combination of faster nitriding rate in the (001) oriented grains and the role of stacking faults and compressive stress.

  13. Review of thin film solar cell technology and applications for ultra-light spacecraft solar arrays

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.

    1991-01-01

    Developments in thin-film amorphous and polycrystalline photovoltaic cells are reviewed and discussed with a view to potential applications in space. Two important figures of merit are discussed: efficiency (i.e., what fraction of the incident solar energy is converted to electricity), and specific power (power to weight ratio).

  14. Polycrystalline diamond based detector for Z-pinch plasma diagnosis

    SciTech Connect

    Liu Linyue; Zhao Jizhen; Chen Liang; Ouyang Xiaoping; Wang Lan

    2010-08-15

    A detector setup based on polycrystalline chemical-vapor-deposition diamond film is developed with great characteristics: low dark current (lower than 60 pA within 3 V/{mu}m), fast pulsed response time (rise time: 2-3 ns), flat spectral response (3-5 keV), easy acquisition, low cost, and relative large sensitive area. The characterizing data on Qiangguang-I accelerator show that this detector can satisfy the practical requirements in Z-pinch plasma diagnosis very well, which offers a promising prototype for the x-ray detection in Z-pinch diagnosis.

  15. Statistical thermodynamics of strain hardening in polycrystalline solids

    DOE PAGES

    Langer, James S.

    2015-09-18

    This paper starts with a systematic rederivation of the statistical thermodynamic equations of motion for dislocation-mediated plasticity proposed in 2010 by Langer, Bouchbinder, and Lookman. The paper then uses that theory to explain the anomalous rate-hardening behavior reported in 1988 by Follansbee and Kocks and to explore the relation between hardening rate and grain size reported in 1995 by Meyers et al. A central theme is the need for physics-based, nonequilibrium analyses in developing predictive theories of the strength of polycrystalline materials.

  16. Statistical thermodynamics of strain hardening in polycrystalline solids.

    PubMed

    Langer, J S

    2015-09-01

    This paper starts with a systematic rederivation of the statistical thermodynamic equations of motion for dislocation-mediated plasticity proposed in 2010 by Langer, Bouchbinder, and Lookman [Acta Mat. 58, 3718 (2010)ACMAFD1359-645410.1016/j.actamat.2010.03.009]. It then uses that theory to explain the anomalous rate-hardening behavior reported in 1988 by Follansbee and Kocks and to explore the relation between hardening rate and grain size reported in 1995 by Meyers et al. A central theme is the need for physics-based, nonequilibrium analyses in developing predictive theories of the strength of polycrystalline materials.

  17. Statistical thermodynamics of strain hardening in polycrystalline solids

    SciTech Connect

    Langer, James S.

    2015-01-01

    This paper starts with a systematic rederivation of the statistical thermodynamic equations of motion for dislocation-mediated plasticity proposed in 2010 by Langer, Bouchbinder, and Lookman. The paper then uses that theory to explain the anomalous rate-hardening behavior reported in 1988 by Follansbee and Kocks and to explore the relation between hardening rate and grain size reported in 1995 by Meyers et al. A central theme is the need for physics-based, nonequilibrium analyses in developing predictive theories of the strength of polycrystalline materials.

  18. Ultrafast carrier dynamics in polycrystalline bismuth telluride nanofilm

    SciTech Connect

    Jia, Lin; Ma, Weigang; Zhang, Xing

    2014-06-16

    In this study, the dynamics of energy carriers in polycrystalline bismuth telluride nanofilm are investigated by the ultrafast pump-probe method. The energy relaxation processes are quantitatively analyzed by using the numerical fitting models. The extracted hot carrier relaxation times of photon excitation, thermalization, and diffusion are around sub-picosecond. The initial reflectivity recovery is found to be dominantly determined by the carrier diffusion, electron-phonon coupling, and photo-generated carriers trapping processes. High-frequency and low-frequency oscillations are both observed and attributed to coherent optical phonons and coherent acoustic phonons, respectively.

  19. Remobilization in the cratonic lithosphere recorded in polycrystalline diamond

    PubMed

    Jacob; Viljoen; Grassineau; Jagoutz

    2000-08-18

    Polycrystalline diamonds (framesites) from the Venetia kimberlite in South Africa contain silicate minerals whose isotopic and trace element characteristics document remobilization of older carbon and silicate components to form the framesites shortly before kimberlite eruption. Chemical variations within the garnets correlate with carbon isotopes in the diamonds, indicating contemporaneous formation. Trace element, radiogenic, and stable isotope variations can be explained by the interaction of eclogites with a carbonatitic melt, derived by remobilization of material that had been stored for a considerable time in the lithosphere. These results indicate more recent formation of diamonds from older materials within the cratonic lithosphere.

  20. An acoustic emission study of plastic deformation in polycrystalline aluminium

    NASA Technical Reports Server (NTRS)

    Bill, R. C.; Frederick, J. R.; Felbeck, D. K.

    1979-01-01

    Acoustic emission experiments were performed on polycrystalline and single crystal 99.99% aluminum while undergoing tensile deformation. It was found that acoustic emission counts as a function of grain size showed a maximum value at a particular grain size. Furthermore, the slip area associated with this particular grain size corresponded to the threshold level of detectability of single dislocation slip events. The rate of decline in acoustic emission activity as grain size is increased beyond the peak value suggests that grain boundary associated dislocation sources are giving rise to the bulk of the detected acoustic emissions.

  1. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    NASA Technical Reports Server (NTRS)

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  2. Penetration and lateral diffusion characteristics of polycrystalline graphene barriers.

    PubMed

    Yoon, Taeshik; Mun, Jeong Hun; Cho, Byung Jin; Kim, Taek-Soo

    2014-01-01

    We report penetration and lateral diffusion behavior of environmental molecules on synthesized polycrystalline graphene. Penetration occurs through graphene grain boundaries resulting in local oxidation. However, when the penetrated molecules diffuse laterally, the oxidation region will expand. Therefore, we measured the lateral diffusion rate along the graphene-copper interface for the first time by the environment-assisted crack growth test. It is clearly shown that the lateral diffusion is suppressed due to the high van der Waals interaction. Finally, we employed bilayer graphene for a perfect diffusion barrier facilitated by decreased defect density and increased lateral diffusion path.

  3. Machining graphite composites with polycrystalline diamond end mills

    NASA Astrophysics Data System (ADS)

    Kohkonen, Kent E.; Anderson, Scott; Strong, A. B.

    One area of focus in developing light-strong materials has been the development of graphite/epoxy composites. The graphite/epoxy materials have created challenges in the area of fabrication and machining. The research objective was to determine if cutting tool material and style of cutting edge showed any significant differences in tool life. The cutting tool materials and cutter styles included helical carbide-end mills and straight and helical polycrystalline diamond-end mill cutters. The experimental design was developed using a fractional factorial design running twelve tests. Results were taken from cutting tool flank edge wear, composite part surface finish, and visual delamination of the part.

  4. Remobilization in the cratonic lithosphere recorded in polycrystalline diamond

    PubMed

    Jacob; Viljoen; Grassineau; Jagoutz

    2000-08-18

    Polycrystalline diamonds (framesites) from the Venetia kimberlite in South Africa contain silicate minerals whose isotopic and trace element characteristics document remobilization of older carbon and silicate components to form the framesites shortly before kimberlite eruption. Chemical variations within the garnets correlate with carbon isotopes in the diamonds, indicating contemporaneous formation. Trace element, radiogenic, and stable isotope variations can be explained by the interaction of eclogites with a carbonatitic melt, derived by remobilization of material that had been stored for a considerable time in the lithosphere. These results indicate more recent formation of diamonds from older materials within the cratonic lithosphere. PMID:10947983

  5. PDC (polycrystalline diamond compact) bit research at Sandia National Laboratories

    SciTech Connect

    Finger, J.T.; Glowka, D.A.

    1989-06-01

    From the beginning of the geothermal development program, Sandia has performed and supported research into polycrystalline diamond compact (PDC) bits. These bits are attractive because they are intrinsically efficient in their cutting action (shearing, rather than crushing) and they have no moving parts (eliminating the problems of high-temperature lubricants, bearings, and seals.) This report is a summary description of the analytical and experimental work done by Sandia and our contractors. It describes analysis and laboratory tests of individual cutters and complete bits, as well as full-scale field tests of prototype and commercial bits. The report includes a bibliography of documents giving more detailed information on these topics. 26 refs.

  6. Crystallographic Anisotropy of Wear on a Polycrystalline Diamond Surface

    SciTech Connect

    El-dasher, B; Gray, J J; Tringe, J W; Wild, C; W?rner, E; Koidl, P; Biener, J; Hamza, A V

    2005-11-16

    We correlate topography and diffraction measurements to demonstrate that grain orientation profoundly influences polishing rates in polycrystalline diamond synthesized by chemical vapor deposition. Grains oriented with {l_brace}111{r_brace} or {l_brace}100{r_brace} planes perpendicular to the surface normal polish at significantly lower rates compared with grains of all other orientations when the surface is polished in continuously varying in-plane directions. These observations agree with predictions of the periodic bond chain vector model, developed previously for single crystals, and indicate that the polishing rate depends strongly on the number of PBC vectors that are within 10{sup o} of the exposed surface plane.

  7. ToF-SIMS study of polycrystalline uranium after exposure to deuterium

    SciTech Connect

    Morrall, P; Price, D; Nelson, A; Siekhaus, W; Nelson, E; Wu, K J; Stratman, M; McLean, B

    2006-01-19

    Time-of-flight secondary ion mass spectrometry (ToF-SIMS) is employed to examine specific features observed on a polycrystalline depleted uranium sample after exposure to high purity D{sub 2} gas. The ToF-SIMS investigation, being the first of its kind on uranium, investigates a site where the deuterated form of uranium hydride (UD{sub 3}) is clearly observed to have broken through the thin, air-formed oxide. Density functional theory calculations have been performed, which confirm the stability of, and also assign structural geometries to, the various uranium containing fragments observed with SIMS. An inclusion site was also investigated using ToF-SIMS, and these data suggest that the edges of such inclusions exhibit increased D ion, and hence H ion, diffusion when compared to the surrounding surface oxide. These results offer support to the previously published hypotheses that inclusion sites on uranium surfaces exhibit an increased probability to form hydride sites under H{sub 2} exposure.

  8. Electrochemically produced films and polycrystalline salts of C60n-: Their physical characterization

    SciTech Connect

    Jones, M.T.; Subramanian, R.; Boulas, P.

    1994-12-31

    The discovery of C60 and its anionic salts C60{sup n-} (n = 1, 2, or 3) has provided a series of new materials with a wide range of very interesting chemical and physical properties such as ferromagnetism, nonlinear optical activity, semiconductivity and superconductivity. To date, relatively few salts of the anions of C60 have been studied because until recently a simple synthesis procedure did not exist. The authors recently developed simple and efficient methods for preparing thin films (prepared electrochemically) of both C60 and C60n- (n = 1, 2, or 3) and for preparing anion salts of C60 (prepared electrochemically and chemically). The authors now report the spectroscopic characterization of some of these materials. For example, studies of the temperature dependence of the Raman spectra of selected films (such as C60 and Cs3C60) are discussed. Also discussed are the ESR studies of a series of polycrystalline C60 anion salts derived from films as well as from the facile chemical preparation methods which are presented. The results of these spectroscopic studies are discussed as are results from other physical methods of characterization.

  9. Highly oriented polycrystalline Cu2O film formation using RF magnetron sputtering deposition for solar cells

    NASA Astrophysics Data System (ADS)

    Noda, S.; Shima, H.; Akinaga, H.

    2014-02-01

    Room temperature sputtering deposition and re-crystallization of the deposited thin films by rapid thermal annealing have been evaluating in detail as a formation method of Cu2O active layer for solar cells, which minimize thermal budget in fabrication processes. Single phase polycrystalline Cu2O films were obtained by a magnetron rf sputtering deposition and its crystallinity and electrical characteristics were controlled by the annealing. Hall mobility was improved up to 17 cm2V-1s-1 by the annealing at 600°C for 30s. Since this value was smaller than 47 cm2V-1s-1 of the film deposited under thermal equilibrium state using pulsed laser deposition at 600°C, some contrivances were necessary to compensate the deficiency. It was understood that the sputter-deposited Cu2O films on (111)-oriented Pt films were strongly oriented to (111) face also by the self-assembly and the crystallinity was improved by the annealing preserving its orientation. The sputter-deposited film quality was expected to become equivalent to the pulsed laser deposition film from the results of X-ray diffractometry and photoluminescence.

  10. Highly (0001)-oriented Al-doped ZnO polycrystalline films on amorphous glass substrates

    NASA Astrophysics Data System (ADS)

    Nomoto, Junichi; Inaba, Katsuhiko; Osada, Minoru; Kobayashi, Shintaro; Makino, Hisao; Yamamoto, Tetsuya

    2016-09-01

    Very thin aluminum-doped zinc oxide (AZO) films with a well-defined (0001) orientation and a surface roughness of 0.357 nm were deposited on amorphous glass substrates at a temperature of 200 °C by radio frequency magnetron sputtering, which are promising, particularly in terms of orientation evolution, surface roughness, and carrier transport, as buffer layers for the subsequent deposition of highly (0001)-oriented AZO polycrystalline films of 490 nm thickness by direct current (DC) magnetron sputtering. Sintered AZO targets with an Al2O3 content of 2.0 wt. % were used. DC magnetron sputtered AZO films on bare glass substrates showed a mixed (0001) and the others crystallographic orientation, and exhibited a high contribution of grain boundary scattering to carrier transport, resulting in reduced Hall mobility. Optimizing the thickness of the AZO buffer layers to 10 nm led to highly (0001)-oriented bulk AZO films with a marked reduction in the above contribution, resulting in AZO films with improved Hall mobility together with enhanced carrier concentration. The surface morphology and point defect density were also improved by applying the buffer layers, as shown by atomic force microscopy and Raman spectroscopy, respectively.

  11. Significant enhancement of the thermoelectric figure of merit of polycrystalline Si films by reducing grain size

    NASA Astrophysics Data System (ADS)

    Valalaki, K.; Vouroutzis, N.; Nassiopoulou, A. G.

    2016-08-01

    The thermoelectric properties of p-type polycrystalline silicon thin films deposited by low pressure chemical vapour deposition (LPCVD) were accurately determined at room temperature and the thermoelectric figure of merit was deduced as a function of film thickness, ranging from 100 to 500 nm. The effect of film thickness on their thermoelectric performance is discussed. More than threefold increase in the thermoelectric figure of merit of the 100 nm thick polysilicon film was observed compared to the 500 nm thick film, reaching a value as high as 0.033. This enhancement is mainly the result of the smaller grain size in the thinner films. With the decrease in grain size the resistivity of the films is increased twofold and electrical conductivity decreased, however the Seebeck coefficient is increased by 30% and the thermal conductivity is decreased eightfold, being mainly at the origin of the increased figure of merit of the 100 nm film. Our experimental results were compared to known theoretical models and the possible mechanisms involved are presented and discussed.

  12. Exchange-bias in amorphous ferromagnetic and polycrystalline antiferromagnetic bilayers: Structural study and micromagnetic modeling

    NASA Astrophysics Data System (ADS)

    Kohn, A.; Dean, J.; Kovacs, A.; Zeltser, A.; Carey, M. J.; Geiger, D.; Hrkac, G.; Schrefl, T.; Allwood, D.

    2011-04-01

    We study the role of the structure of antiferromagnetic polycrystalline metallic films in determining the magnetic properties of an exchange-coupled amorphous ferromagnetic layer. The bilayers are sputter-deposited, highly textured {111} Ir22Mn78 and Co65.5Fe14.5B20 thin films. We focus on structural characterization of Ir22Mn78 as a function of layer thickness in the range having the strongest influence over the exchange-bias field and training effect. We have used transmission electron microscopy to characterize defects in the form of interface steps and roughness, interdiffusion, twin- and grain-boundaries. Such defects can result in uncompensated magnetic spins in the antiferromagnet, which then contribute to exchange-bias. These experimental results form the basis of a general model, which uses finite element micromagnetic simulations. The model incorporates the experimental structural parameters of the bilayer by implementing a surface integral technique that allows numerical calculations to solve the transition from an amorphous to a granular structure. As a result, a detailed calculation of the underlying magnetic structure within the antiferromagnetic material is achieved. These calculations are in good agreement with micromagnetic imaging using Lorentz transmission electron microscopy and the macro-magnetic properties of these bilayers.

  13. Nanoscale Imaging of Band Gap and Defects in Polycrystalline CdTe Photovoltaic Devices

    NASA Astrophysics Data System (ADS)

    Zhitenev, Nikolai; Yoon, Yohan; Chae, Jungseok; Katzenmeyer, Aaron; Yoon, Heayoung; An, Sangmin; Shumacher, Joshua; Centrone, Andrea

    To further increase the power efficiency of polycrystalline thin film photovoltaic (PV) technology, a detailed understanding of microstructural properties of the devices is required. In this work, we investigate the microstructure of CdTe PV devices using two optical spectroscopies. Sub-micron thickness lamella samples were cut out from a PV device, either in cross-section or in-plane, by focused ion beam. The first technique is the photothermal induced resonance (PTIR) used to obtain absorption spectra over a broad range of wavelengths. In PTIR, a wavelength tunable pulsed laser is combined with an atomic force microscope to detect the local thermal expansion of lamella CdTe sample induced by light absorption. The second technique based on a near-field scanning optical microscope maps the local absorption at fixed near-IR wavelengths with energies at or below CdTe band-gap energy. The variation of the band gap throughout the CdTe absorber determined from PTIR spectra is ~ 20 meV. Both techniques detect strong spatial variation of shallow defects over different grains. The spatial distribution of mid-gap defects appears to be more uniform. The resolution, the sensitivity and the applicability of these two approaches are compared.

  14. Observation and simulation of hard x ray photoelectron diffraction to determine polarity of polycrystalline zinc oxide films with rotation domains

    SciTech Connect

    Williams, Jesse R.; Adachi, Yutaka; Ohashi, Naoki; Pis, Igor; Kobata, Masaaki; Winkelmann, Aimo; Matsushita, Tomohiro; Kobayashi, Keisuke

    2012-02-01

    X ray photoelectron diffraction (XPD) patterns of polar zinc oxide (ZnO) surfaces were investigated experimentally using hard x rays and monochromatized Cr K{alpha} radiation and theoretically using a cluster model approach and a dynamical Bloch wave approach. We focused on photoelectrons emitted from the Zn 2p{sub 3/2} and O 1s orbitals in the analysis. The obtained XPD patterns for the (0001) and (0001) surfaces of a ZnO single crystal were distinct for a given emitter and polarity. Polarity determination of c-axis-textured polycrystalline ZnO thin films was also achieved with the concept of XPD, even though the in-plane orientation of the columnar ZnO grains was random.

  15. RF Surface Impedance Measurement of Polycrystalline and Large Grain Nb Disk Sample at 7.5 GHz

    SciTech Connect

    Xiao, Binping; Geng, Rongli; Kelley, Michael J.; Marhauser, Frank; Phillips, H. Larry; Reece, Charles E.; Wang, Haipeng

    2009-11-01

    A Surface Impedance Characterization (SIC) system has been proposed at the 2005 SRF workshop and recently updated as detailed at the 2009 PAC conference. Currently the SIC system can measure samples in a temperature range from 2K to 20K exposed to an RF magnetic flux density of less than 3mT. We report on new results of a BCP etched large grain Nb sample measured with this system as compared with previous results of a BCP etched polycrystalline Nb sample. The design of an upgraded SIC system for use at higher magnetic flux densities is on the way to more efficiently investigate correlations between local material characteristics and associated SRF properties, both for preparation studies of bulk niobium and also new thin film SRF developments.

  16. Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting

    NASA Astrophysics Data System (ADS)

    Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle; Bidault, Sebastien; Bonod, Nicolas; Abbarchi, Marco

    2016-01-01

    We report the fabrication of Si-based dielectric Mie resonators via a low cost process based on solid-state dewetting of ultra-thin amorphous Si on SiO2. We investigate the dewetting dynamics of a few nanometer sized layers annealed at high temperature to form submicrometric Si-particles. Morphological and structural characterization reveal the polycrystalline nature of the semiconductor matrix as well as rather irregular morphologies of the dewetted islands. Optical dark field imaging and spectroscopy measurements of the single islands reveal pronounced resonant scattering at visible frequencies. The linewidth of the low-order modes can be ~20 nm in full width at half maximum, leading to a quality factor Q exceeding 25. These values reach the state-of-the-art ones obtained for monocrystalline Mie resonators. The simplicity of the dewetting process and its cost-effectiveness opens the route to exploiting it over large scales for applications in silicon-based photonics.

  17. Electron Drift-Mobility Measurements in Polycrystalline CuIn 1-xGaxSe2 Solar Cells

    SciTech Connect

    Dinca, S. A.; Schiff, E. A.; Shafarman, W. N.; Egaas, B.; Noufi, R.; Young, D. L.

    2012-03-05

    We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn{sub 1-x}Ga{sub x}Se{sub 2} films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm{sup 2}/Vs and are weakly temperature-dependent from 100-300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm{sup 2}/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.

  18. Exploring electronic structure of one-atom thick polycrystalline graphene films: A nano angle resolved photoemission study

    PubMed Central

    Avila, José; Razado, Ivy; Lorcy, Stéphane; Fleurier, Romain; Pichonat, Emmanuelle; Vignaud, Dominique; Wallart, Xavier; Asensio, María C.

    2013-01-01

    The ability to produce large, continuous and defect free films of graphene is presently a major challenge for multiple applications. Even though the scalability of graphene films is closely associated to a manifest polycrystalline character, only a few numbers of experiments have explored so far the electronic structure down to single graphene grains. Here we report a high resolution angle and lateral resolved photoelectron spectroscopy (nano-ARPES) study of one-atom thick graphene films on thin copper foils synthesized by chemical vapor deposition. Our results show the robustness of the Dirac relativistic-like electronic spectrum as a function of the size, shape and orientation of the single-crystal pristine grains in the graphene films investigated. Moreover, by mapping grain by grain the electronic dynamics of this unique Dirac system, we show that the single-grain gap-size is 80% smaller than the multi-grain gap recently reported by classical ARPES. PMID:23942471

  19. Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting.

    PubMed

    Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle; Bidault, Sebastien; Bonod, Nicolas; Abbarchi, Marco

    2016-02-01

    We report the fabrication of Si-based dielectric Mie resonators via a low cost process based on solid-state dewetting of ultra-thin amorphous Si on SiO2. We investigate the dewetting dynamics of a few nanometer sized layers annealed at high temperature to form submicrometric Si-particles. Morphological and structural characterization reveal the polycrystalline nature of the semiconductor matrix as well as rather irregular morphologies of the dewetted islands. Optical dark field imaging and spectroscopy measurements of the single islands reveal pronounced resonant scattering at visible frequencies. The linewidth of the low-order modes can be ∼20 nm in full width at half maximum, leading to a quality factor Q exceeding 25. These values reach the state-of-the-art ones obtained for monocrystalline Mie resonators. The simplicity of the dewetting process and its cost-effectiveness opens the route to exploiting it over large scales for applications in silicon-based photonics.

  20. Nanosecond x-Ray diffraction from polycrystalline and amorphous materials in a pinhole camera geometry suitable for laser shock compression experiments

    SciTech Connect

    Hawreliak, J.; Lorenzana, H. E.; Remington, B. A.; Lukezic, S.; Wark, J. S.

    2007-08-15

    Nanosecond pulses of quasimonochromatic x-rays emitted from the K shell of ions within a laser-produced plasma are of sufficient spectral brightness to allow single-shot recording of powder diffraction patterns from thin foils of order millimeter diameter. Strong diffraction signals have been observed in a cylindrical pinhole camera arrangement from both polycrystalline and amorphous foils, and the experimental arrangement and foil dimensions are such that they allow for laser shocking or quasi-isentropic loading of the foil during the diffraction process.

  1. Nanosecond x-ray diffraction from polycrystalline and amorphous materials in a pinhole camera geometry suitable for laser shock compression experiments.

    PubMed

    Hawreliak, J; Lorenzana, H E; Remington, B A; Lukezic, S; Wark, J S

    2007-08-01

    Nanosecond pulses of quasimonochromatic x-rays emitted from the K shell of ions within a laser-produced plasma are of sufficient spectral brightness to allow single-shot recording of powder diffraction patterns from thin foils of order millimeter diameter. Strong diffraction signals have been observed in a cylindrical pinhole camera arrangement from both polycrystalline and amorphous foils, and the experimental arrangement and foil dimensions are such that they allow for laser shocking or quasi-isentropic loading of the foil during the diffraction process.

  2. Fluorine doped tin oxide (FTO) thin film as transparent conductive oxide (TCO) for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Muthukumar, Anusha; Rey, Germain; Giusti, Gael; Consonni, Vincent; Appert, Estelle; Roussel, Hervé; Dakshnamoorthy, Arivuoli; Bellet, Daniel

    2013-02-01

    Textured FTO thin films were deposited on corning glass substrates at 420°C by ultrasonic spray pyrolysis method. The electrical, optical and structural properties of the prepared functional FTO thin films were investigated. Homogeneous textured columnar grain morphology was observed through FESEM. As prepared thin films exhibits polycrystalline cassiterite structure with preferred orientation along (200). FTO is a promising TCO as front electrodes of thin film solar cells because of their good electrical properties (4.3×10-4ω.cm) combined with high transmission properties (86%).

  3. Structural, morphological, optical and photoluminescent properties of spray-deposited ZnSe thin film

    NASA Astrophysics Data System (ADS)

    Lohar, G. M.; Shinde, S. K.; Fulari, V. J.

    2014-11-01

    ZnSe thin films are successfully deposited by spray pyrolysis deposition technique. Deposited thin films are characterized by X-ray diffraction study, and it reveals that spray-deposited ZnSe thin films are polycrystalline with hexagonal crystal structure. Surface morphology is carried out by scanning electron microscopy. It shows cotton-like morphology, and optical properties, such as absorbance, transmittance, reflectance, band gap, refractive index, extinction coefficient are studied. Photoluminescence shows strong emission at 497 nm. Also, spray-deposited ZnSe thin films are hydrophilic in nature, which is shown by contact angle meter.

  4. Performance of in-pixel circuits for photon counting arrays (PCAs) based on polycrystalline silicon TFTs

    NASA Astrophysics Data System (ADS)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Street, Robert A.; Lu, Jeng Ping

    2016-03-01

    Photon counting arrays (PCAs), defined as pixelated imagers which measure the absorbed energy of x-ray photons individually and record this information digitally, are of increasing clinical interest. A number of PCA prototypes with a 1 mm pixel-to-pixel pitch have recently been fabricated with polycrystalline silicon (poly-Si)—a thin-film technology capable of creating monolithic imagers of a size commensurate with human anatomy. In this study, analog and digital simulation frameworks were developed to provide insight into the influence of individual poly-Si transistors on pixel circuit performance—information that is not readily available through empirical means. The simulation frameworks were used to characterize the circuit designs employed in the prototypes. The analog framework, which determines the noise produced by individual transistors, was used to estimate energy resolution, as well as to identify which transistors contribute the most noise. The digital framework, which analyzes how well circuits function in the presence of significant variations in transistor properties, was used to estimate how fast a circuit can produce an output (referred to as output count rate). In addition, an algorithm was developed and used to estimate the minimum pixel pitch that could be achieved for the pixel circuits of the current prototypes. The simulation frameworks predict that the analog component of the PCA prototypes could have energy resolution as low as 8.9% full width at half maximum (FWHM) at 70 keV; and the digital components should work well even in the presence of significant thin-film transistor (TFT) variations, with the fastest component having output count rates as high as 3 MHz. Finally, based on conceivable improvements in the underlying fabrication process, the algorithm predicts that the 1 mm pitch of the current PCA prototypes could be reduced significantly, potentially to between ~240 and 290 μm.

  5. Performance of in-pixel circuits for photon counting arrays (PCAs) based on polycrystalline silicon TFTs.

    PubMed

    Liang, Albert K; Koniczek, Martin; Antonuk, Larry E; El-Mohri, Youcef; Zhao, Qihua; Street, Robert A; Lu, Jeng Ping

    2016-03-01

    Photon counting arrays (PCAs), defined as pixelated imagers which measure the absorbed energy of x-ray photons individually and record this information digitally, are of increasing clinical interest. A number of PCA prototypes with a 1 mm pixel-to-pixel pitch have recently been fabricated with polycrystalline silicon (poly-Si)-a thin-film technology capable of creating monolithic imagers of a size commensurate with human anatomy. In this study, analog and digital simulation frameworks were developed to provide insight into the influence of individual poly-Si transistors on pixel circuit performance-information that is not readily available through empirical means. The simulation frameworks were used to characterize the circuit designs employed in the prototypes. The analog framework, which determines the noise produced by individual transistors, was used to estimate energy resolution, as well as to identify which transistors contribute the most noise. The digital framework, which analyzes how well circuits function in the presence of significant variations in transistor properties, was used to estimate how fast a circuit can produce an output (referred to as output count rate). In addition, an algorithm was developed and used to estimate the minimum pixel pitch that could be achieved for the pixel circuits of the current prototypes. The simulation frameworks predict that the analog component of the PCA prototypes could have energy resolution as low as 8.9% full width at half maximum (FWHM) at 70 keV; and the digital components should work well even in the presence of significant thin-film transistor (TFT) variations, with the fastest component having output count rates as high as 3 MHz. Finally, based on conceivable improvements in the underlying fabrication process, the algorithm predicts that the 1 mm pitch of the current PCA prototypes could be reduced significantly, potentially to between ~240 and 290 μm.

  6. Long-range superconducting proximity effect in polycrystalline Co nanowires

    SciTech Connect

    Kompaniiets, M.; Porrati, F.; Huth, M.; Dobrovolskiy, O. V.; Neetzel, C.; Brötz, J.; Ensinger, W.

    2014-02-03

    We report experimental evidence of a long-range superconducting proximity effect in polycrystalline Co nanowires in contact with a superconducting W-based floating electrode (inducer). For electrical resistance measurements, voltage leads were connected to the Co nanowire on both sides of the superconducting inducer at a distance of 7.2 μm. We observed a 28% reduction of the nanowire resistance when sweeping the temperature below the inducer's transition temperature T{sub c} = 5.2 K. Our analysis of the resistance data shows that the superconducting proximity length in polycrystalline Co is as large as 1 μm at 2.4 K, attesting to a long-range proximity effect. Moreover, this long-range proximity effect is insusceptible to magnetic fields up to 11 T, which is indicative of spin-triplet pairing. Our results provide evidence that magnetic inhomogeneity of the ferromagnet enlarges the spatial extend of the spin-triplet superconducting proximity effect.

  7. Lattice Boltzmann models for the grain growth in polycrystalline systems

    NASA Astrophysics Data System (ADS)

    Zheng, Yonggang; Chen, Cen; Ye, Hongfei; Zhang, Hongwu

    2016-08-01

    In the present work, lattice Boltzmann models are proposed for the computer simulation of normal grain growth in two-dimensional systems with/without immobile dispersed second-phase particles and involving the temperature gradient effect. These models are demonstrated theoretically to be equivalent to the phase field models based on the multiscale expansion. Simulation results of several representative examples show that the proposed models can effectively and accurately simulate the grain growth in various single- and two-phase systems. It is found that the grain growth in single-phase polycrystalline materials follows the power-law kinetics and the immobile second-phase particles can inhibit the grain growth in two-phase systems. It is further demonstrated that the grain growth can be tuned by the second-phase particles and the introduction of temperature gradient is also an effective way for the fabrication of polycrystalline materials with grained gradient microstructures. The proposed models are useful for the numerical design of the microstructure of materials and provide effective tools to guide the experiments. Moreover, these models can be easily extended to simulate two- and three-dimensional grain growth with considering the mobile second-phase particles, transient heat transfer, melt convection, etc.

  8. GaAs Photovoltaics on Polycrystalline Ge Substrates

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

    2007-01-01

    High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

  9. Thermal conductivity of MoS2 polycrystalline nanomembranes

    NASA Astrophysics Data System (ADS)

    Sledzinska, M.; Graczykowski, B.; Placidi, M.; Saleta Reig, D.; El Sachat, A.; Reparaz, J. S.; Alzina, F.; Mortazavi, B.; Quey, R.; Colombo, L.; Roche, S.; Sotomayor Torres, C. M.

    2016-09-01

    Heat conduction in 2D materials can be effectively engineered by means of controlling nanoscale grain structure. A favorable thermal performance makes these structures excellent candidates for integrated heat management units. Here we show combined experimental and theoretical studies for MoS2 nanosheets in a nanoscale grain-size limit. We report thermal conductivity measurements on 5 nm thick polycrystalline MoS2 by means of 2-laser Raman thermometry. The free-standing, drum-like MoS2 nanomembranes were fabricated using a novel polymer- and residue-free, wet transfer, in which we took advantage of the difference in the surface energies between MoS2 and the growth substrate to transfer the CVD-grown nanosheets. The measurements revealed a strong reduction in the in-plane thermal conductivity down to about 0.73 ± 0.25 {{{W}}{{m}}}-1 {{{K}}}-1. The results are discussed theoretically using finite elements method simulations for a polycrystalline film, and a scaling trend of the thermally conductivity with grain size is proposed.

  10. Collective dynamics underpins Rayleigh behavior in disordered polycrystalline ferroelectrics

    PubMed Central

    Bintachitt, P.; Jesse, S.; Damjanovic, D.; Han, Y.; Reaney, I. M.; Trolier-McKinstry, S.; Kalinin, S. V.

    2010-01-01

    Nanoscale and mesoscopic disorder and associated local hysteretic responses underpin the unique properties of spin and cluster glasses, phase-separated oxides, polycrystalline ferroelectrics, and ferromagnets alike. Despite the rich history of the field, the relationship between the statistical descriptors of hysteresis behavior such as Preisach density, and micro and nanostructure has remained elusive. By using polycrystalline ferroelectric capacitors as a model system, we now report quantitative nonlinearity measurements in 0.025–1 μm3 volumes, approximately 106 times smaller than previously possible. We discover that the onset of nonlinear behavior with thickness proceeds through formation and increase of areal density of micron-scale regions with large nonlinear response embedded in a more weakly nonlinear matrix. This observation indicates that large-scale collective domain wall dynamics, as opposed to motion of noninteracting walls, underpins Rayleigh behavior in disordered ferroelectrics. The measurements provide evidence for the existence and extent of the domain avalanches in ferroelectric materials, forcing us to rethink 100-year old paradigms. PMID:20368462

  11. Observations of Dynamic Strain Aging in Polycrystalline NiAl

    NASA Technical Reports Server (NTRS)

    Weaver, M. L.; Noebe, R. D.; Kaufman, M. J.

    1996-01-01

    Dynamic strain aging has been investigated at temperatures between 77 and 1100 K in eight polycrystalline NiAl alloys. The 0.2% offset yield stress and work hardening rates for these alloys generally decreased with increasing temperature. However, local plateaus or maxima were observed in conventional purity and carbon doped alloys at intermediate temperatures (600-900 K). This anomalous behavior was not observed in low interstitial high-purity, nitrogen doped, or in titanium doped materials. Low or negative strain rate sensitivities (SRS) were also observed in all eight alloys in this intermediate temperature range. Coincident with the occurrence of negative SRS was the occurrence of serrated flow in conventional purity alloys containing high concentrations of Si in addition to C. These phenomena have been attributed to dynamic strain aging (DSA). Chemical analysis of the alloys used in this study suggests that the main species causing strain aging in polycrystalline NiAl is C but indicate that residual Si impurities can enhance the strain aging effect.

  12. Creep and stress relaxation modeling of polycrystalline ceramic fibers

    NASA Technical Reports Server (NTRS)

    Dicarlo, James A.; Morscher, Gregory N.

    1994-01-01

    A variety of high performance polycrystalline ceramic fibers are currently being considered as reinforcement for high temperature ceramic matrix composites. However, under mechanical loading about 800 C, these fibers display creep related instabilities which can result in detrimental changes in composite dimensions, strength, and internal stress distributions. As a first step toward understanding these effects, this study examines the validity of a mechanism-based empirical model which describes primary stage tensile creep and stress relaxation of polycrystalline ceramic fibers as independent functions of time, temperature, and applied stress or strain. To verify these functional dependencies, a simple bend test is used to measure stress relaxation for four types of commercial ceramic fibers for which direct tensile creep data are available. These fibers include both nonoxide (SCS-6, Nicalon) and oxide (PRD-166, FP) compositions. The results of the Bend Stress Relaxation (BSR) test not only confirm the stress, time, and temperature dependencies predicted by the model, but also allow measurement of model empirical parameters for the four fiber types. In addition, comparison of model tensile creep predictions based on the BSR test results with the literature data show good agreement, supporting both the predictive capability of the model and the use of the BSR text as a simple method for parameter determination for other fibers.

  13. Field theory and diffusion creep predictions in polycrystalline aggregates

    NASA Astrophysics Data System (ADS)

    Villani, A.; Busso, E. P.; Forest, S.

    2015-07-01

    In polycrystals, stress-driven vacancy diffusion at high homologous temperatures leads to inelastic deformation. In this work, a novel continuum mechanics framework is proposed to describe the strain fields resulting from such a diffusion-driven process in a polycrystalline aggregate where grains and grain boundaries are explicitly considered. The choice of an anisotropic eigenstrain in the grain boundary region provides the driving force for the diffusive creep processes. The corresponding inelastic strain rate is shown to be related to the gradient of the vacancy flux. Dislocation driven deformation is then introduced as an additional mechanism, through standard crystal plasticity constitutive equations. The fully coupled diffusion-mechanical model is implemented into the finite element method and then used to describe the biaxial creep behaviour of FCC polycrystalline aggregates. The corresponding results revealed for the first time that such a coupled diffusion-stress approach, involving the gradient of the vacancy flux, can accurately predict the well-known macroscopic strain rate dependency on stress and grain size in the diffusion creep regime. They also predict strongly heterogeneous viscoplastic strain fields, especially close to grain boundaries triple junctions. Finally, a smooth transition from Herring and Coble to dislocation creep behaviour is predicted and compared to experimental results for copper.

  14. Phase-Field Crystal Modeling of Polycrystalline Materials

    NASA Astrophysics Data System (ADS)

    Adland, Ari Joel

    In this thesis, we use and further develop the phase-field crystal (PFC) method derived from classical density functional theory to investigate polycyrstalline materials. The PFC method resolves atomistic scale processes by tracking the evolution of the local time averaged crystal density field, thereby naturally describing dislocations and grian boundaries (GBs), but with a phenomenological incorporation of vacancy diffusion that accesses long diffusive time scales beyond the reach of MD simulations. We use the PFC method to investigate two technologically important classes of polycrystalline materials whose properties are strongly influenced by GB equilibrium and non-equilibrium properties. The first are structural polycyrstalline materials such as nickel based superalloys used for turbine blades. Those alloys can develop large defects known as "hot tears'' due to the lack of complete crystal cohesion and strain localization during the late stages of solidification. We investigate the equilibrium structure of symmetric tilt GBs at high homologous temperatures and identify a wide range of misorientation that leads to the formation of nanometer-thick intergranular films with liquid like properties. The phase transition character of this "GB premelting'' phenomenon is investigated through the quantitative computation of a disjoining thermodynamic potential in both pure materials and alloys, using body-centered-cubic Fe as a model system. The analysis of this potential sheds light on the physical origin of attractive and repulsive forces that promote and suppress crystal cohesion, respectively, and are found to be strongly affected by solute addition. Our equilibrium studies also reveal the existence of novel structural transitions of low angle GBs driven by the pairing of dislocations with both screw and edge character. Non-equilibrium PFC simulations in turn characterize the response of GBs to an applied shear stress, showing that intergranular liquid-like films

  15. Dielectric and conducting behaviour of polycrystalline holmium octa-molybdate

    NASA Astrophysics Data System (ADS)

    Want, Basharat; Zahoor Ahmad, Bhat; Bhat, Bilal Hamid

    2014-09-01

    Polycrystalline holmium octa-molybdate spherulites have been obtained by using gel diffusion technique and characterized by different physio-chemical techniques. The surfaces of these spherulites are composed of nano-rod with an average diameter of about 80 nm. At room temperature the initial crystal structure is triclinic, space group P1. Thermal studies suggested a phase transition occurring in holmium octa-molybdate crystals at about 793 K. The electrical properties of the system have been studied as a function of frequency and temperature in the ranges of 20 Hz-3 MHz and 290-570 K, respectively. A giant dielectric constant and two loss peaks have been observed in the permittivity formalism. The conducting behaviour of the material is also discussed. The conductivity was found to be 1572 μ Ω-1 m-1 at room temperature and 3 MHz frequency. The conductivity of the polycrystalline material was attributed to the fact that it arises due to the migration of defects on the oxygen sub-lattice. Impedance studies were also performed in the frequency domain to infer the bulk and grain boundary contributions to the overall electric response of the material. The electrical responses have been attributed to the grain, grain-boundary, and interfacial effects.

  16. Concurrent atomistic-continuum simulation of polycrystalline strontium titanate

    NASA Astrophysics Data System (ADS)

    Yang, Shengfeng; Zhang, Ning; Chen, Youping

    2015-08-01

    This paper presents the new development of a concurrent atomistic-continuum (CAC) method in simulation of the dynamic evolution of defects in polycrystalline polyatomic materials. The CAC method is based on a theoretical formulation that extends Kirkwood's statistical mechanical theory of transport processes to a multiscale description of crystalline materials. It solves for both the deformation of lattice cells and the internal deformation within each lattice cell, making it a suitable method for simulations of polyatomic materials. The simulation results of this work demonstrate that CAC can simulate the nucleation of dislocations and cracks from atomistically resolved grain boundary (GB) regions and the subsequent propagation into coarsely meshed grain interiors in polycrystalline strontium titanate without the need of supplemental constitutive equations or additional numerical treatments. With a significantly reduced computational cost, CAC predicts not only the GB structures, but also the dynamic behaviour of dislocations, cracks and GBs, all of which are comparable with those obtained from atomic-level molecular dynamics simulations. Simulation results also show that dislocations tend to initiate from GBs and triple junctions. The angle between the slip planes and the GB planes plays a key role in determining the GB-dislocation reactions.

  17. Various Fatigue Testing of Polycrystalline Silicon Microcantilever Beam in Bending

    NASA Astrophysics Data System (ADS)

    Hong; Hocheng; Hung, Jeng-Nan; Guu, Yunn-Horng

    2008-06-01

    With the vast potential of micro-electro-mechanical systems (MEMS) technology, the reliability is essential for the successful applications of microdevices. Polycrystalline silicon is one of the most often used structural materials in microdevices. Tension testing for fatigue life of this material has been investigated since past years. This paper presents a micro-actuator-based bending testing system as well as a MTS Tytron250 micro-tensile-force testing machine to study the fatigue of microbeams in bending. The polycrystalline silicon microcantilever beams are fabricated on silicon wafer. The influence of various dimensions and stress on the fatigue endurance is studied when an external force is loaded on the microcantilever beam. The flexural strength of beams are calculated by the ANSYS. Based on the experimental results and ANSYS analysis, it shows that the longer specimen reduces the stresses when the displacement, width and thickness are kept the same. When the width varies, the larger width results in higher stresses. The fatigue life lies between 9.1 ×105-1.53 ×107 cycles in use of the testing machine. For microactuator testing experiment, the fatigue life persists up to million cycles without failure. The obtained results are compared with the references of different testing methods.

  18. In Situ TEM Observation of Dislocation Evolutionin Polycrystalline UO2

    SciTech Connect

    L. F. HE; 1 M. A. KIRK; Argonne National Laboratory; J. Gan; T. R. ALLEN

    2014-10-01

    In situ transmission electron microscopy observation of polycrystalline UO2 (with average grain size of about 5 lm) irradiated with Kr ions at 600C and 800C was conducted to understand the radiation-induced dislocation evolution under the influence of grain boundaries. The dislocation evolution in the grain interior of polycrystalline UO2 was similar under Kr irradiation at different ion energies and temperatures. As expected, it was characterized by the nucleation and growth of dislocation loops at low irradiation doses, followed by transformation to extended dislocation lines and tangles at high doses. For the first time, a dislocation-denuded zone was observed near a grain boundary in the 1-MeV Kr-irradiated UO2 sample at 800C. The denuded zone in the vicinity of grain boundary was not found when the irradiation temperature was at 600C. The suppression of dislocation loop formation near the boundary is likely due to the enhanced interstitial diffusion toward grain boundary at the high temperature.

  19. Formation and ferromagnetic properties of FeSi thin films

    SciTech Connect

    Shin, Yooleemi; Anh Tuan, Duong; Hwang, Younghun; Viet Cuong, Tran; Cho, Sunglae

    2013-05-07

    In this work, the growth and ferromagnetic properties of {epsilon}-FeSi thin film on Si(100) substrate prepared by molecular beam epitaxy are reported. The inter-diffusion of Fe layer on Si(100) substrate at 600 Degree-Sign C results in polycrystalline {epsilon}-FeSi layer. The determined activation energy was 0.044 eV. The modified magnetism from paramagnetic in bulk to ferromagnetic states in {epsilon}-FeSi thin films was observed. The saturated magnetization and coercive field of {epsilon}-FeSi film are 4.6 emu/cm{sup 3} and 29 Oe at 300 K, respectively.

  20. Polycrystalline ferroelectric or multiferroic oxide articles on biaxially textured substrates and methods for making same

    DOEpatents

    Goyal, Amit; Shin, Junsoo

    2015-03-31

    A polycrystalline ferroelectric and/or multiferroic oxide article includes a substrate having a biaxially textured surface; at least one biaxially textured buffer layer supported by the substrate; and a biaxially textured ferroelectric or multiferroic oxide layer supported by the buffer layer. Methods for making polycrystalline ferroelectric and/or multiferroic oxide articles are also disclosed.

  1. Combined single-crystalline and polycrystalline CVD diamond substrates for diamond electronics

    SciTech Connect

    Vikharev, A. L. Gorbachev, A. M.; Dukhnovsky, M. P.; Muchnikov, A. B.; Ratnikova, A. K.; Fedorov, Yu. Yu.

    2012-02-15

    The fabrication of diamond substrates in which single-crystalline and polycrystalline CVD diamond form a single wafer, and the epitaxial growth of diamond films on such combined substrates containing polycrystalline and (100) single-crystalline CVD diamond regions are studied.

  2. Thin-film transistors based on p-type Cu{sub 2}O thin films produced at room temperature

    SciTech Connect

    Fortunato, Elvira; Figueiredo, Vitor; Barquinha, Pedro; Elamurugu, Elangovan; Goncalves, Goncalo; Martins, Rodrigo; Park, Sang-Hee Ko; Hwang, Chi-Sun

    2010-05-10

    Copper oxide (Cu{sub 2}O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu{sub 2}O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm{sup 2}/V s and an on/off ratio of 2x10{sup 2}.

  3. A generalized inverse-pole-figure method to analyze domain switching in polycrystalline ferroelectrics

    NASA Astrophysics Data System (ADS)

    Ryo, Hyok-Su; Ryo, In-Gwang

    2016-08-01

    In this study, a generalized inverse-pole-figure (IPF) method has been suggested to analyze domain switching in polycrystalline ferroelectrics including composition of morphotropic phase boundary (MPB). Using the generalized IPF method, saturated domain orientation textures of single-phase polycrystalline ferroelectrics with tetragonal and rhombohedral symmetry have been analytically calculated and the results have been confirmed by comparison with the results from preceding studies. In addition, saturated domain orientation textures near MPBs of different multiple-phase polycrystalline ferroelectrics have been also analytically calculated. The results show that the generalized IPF method is an efficient method to analyze not only domain switching of single-phase polycrystalline ferroelectrics but also MPB of multiple-phase polycrystalline ferroelectrics.

  4. Nondestructive method and apparatus for imaging grains in curved surfaces of polycrystalline articles

    DOEpatents

    Carpenter, Donald A.

    1995-01-01

    A nondestructive method, and associated apparatus, are provided for determining the grain flow of the grains in a convex curved, textured polycrystalline surface. The convex, curved surface of a polycrystalline article is aligned in a horizontal x-ray diffractometer and a monochromatic, converging x-ray beam is directed onto the curved surface of the polycrystalline article so that the converging x-ray beam is diffracted by crystallographic planes of the grains in the polycrystalline article. The diffracted x-ray beam is caused to pass through a set of horizontal, parallel slits to limit the height of the beam and thereafter. The linear intensity of the diffracted x-ray is measured, using a linear position sensitive proportional counter, as a function of position in a direction orthogonal to the counter so as to generate two dimensional data. An image of the grains in the curved surface of the polycrystalline article is provided based on the two-dimensional data.

  5. A continuum dislocation dynamics framework for plasticity of polycrystalline materials

    NASA Astrophysics Data System (ADS)

    Askari, Hesam Aldin

    The objective of this research is to investigate the mechanical response of polycrystals in different settings to identify the mechanisms that give rise to specific response observed in the deformation process. Particularly the large deformation of magnesium alloys and yield properties of copper in small scales are investigated. We develop a continuum dislocation dynamics framework based on dislocation mechanisms and interaction laws and implement this formulation in a viscoplastic self-consistent scheme to obtain the mechanical response in a polycrystalline system. The versatility of this method allows various applications in the study of problems involving large deformation, study of microstructure and its evolution, superplasticity, study of size effect in polycrystals and stochastic plasticity. The findings from the numerical solution are compared to the experimental results to validate the simulation results. We apply this framework to study the deformation mechanisms in magnesium alloys at moderate to fast strain rates and room temperature to 450 °C. Experiments for the same range of strain rates and temperatures were carried out to obtain the mechanical and material properties, and to compare with the numerical results. The numerical approach for magnesium is divided into four main steps; 1) room temperature unidirectional loading 2) high temperature deformation without grain boundary sliding 3) high temperature with grain boundary sliding mechanism 4) room temperature cyclic loading. We demonstrate the capability of our modeling approach in prediction of mechanical properties and texture evolution and discuss the improvement obtained by using the continuum dislocation dynamics method. The framework was also applied to nano-sized copper polycrystals to study the yield properties at small scales and address the observed yield scatter. By combining our developed method with a Monte Carlo simulation approach, the stochastic plasticity at small length scales

  6. Micromechanical modelling of partially molten and sand reinforced polycrystalline ice

    NASA Astrophysics Data System (ADS)

    Castelnau, O.; Duval, P.

    2009-12-01

    The viscoplastic behaviour of polycrystalline ice is strongly affected by the very strong anisotropy of ice crystals. Indeed, in the dislocations creep regime relevant for ice sheet flow, dislocation glide on the basal plane of ice single crystals leads to strain-rates ~6 order of magnitude larger than strain-rates that might be obtain if only non-basal glide is activated. At the polycrystal scale, this behaviour is responsible for a strong mechanical interaction between grains in the secondary (stationary) creep regime, and strain-rate is essentially partitioned between soft grains well-oriented for basal glide and hard grains exhibiting an unfavourable orientation for basal slip. As a consequence, the macroscopic flow stress at the polycrystal scale essentially depends on the resistance of the hardest slip systems or on the associated accommodation processes such as climb of basal dislocation on non-basal planes. Creep experiments performed on polycrystalline ices containing a small amount (less than 10% volume fraction) of liquid water show a dramatic increase of strain-rate, by more than one order of magnitude, compared to solid ice when deformed under similar thermo-mechanical conditions. Similarly, a strong hardening is observed when polycrystalline ice is reinforced by sand (which can be considered as a rigid phase here). This behaviour can be explained by micromechanical models, which aims at estimating the mechanical interactions between grains. For example, the presence of water releases stress concentrations at grain boundaries and therefore favours the inactivation of non-basal systems. To estimate such effect and to reach quantitative comparison with experimental data, we make use of the recent Second-Order homogenization mean-field approach of Ponte-Castaneda, based on self-consistent scheme. The advantage of this approach, which has been shown to provide excellent results when applied to many different non-linear composite materials, comes from the

  7. Induced electronic anisotropy in bismuth thin films

    SciTech Connect

    Liao, Albert D.; Yao, Mengliang; Opeil, Cyril; Katmis, Ferhat; Moodera, Jagadeesh S.; Li, Mingda; Tang, Shuang; Dresselhaus, Mildred S.

    2014-08-11

    We use magneto-resistance measurements to investigate the effect of texturing in polycrystalline bismuth thin films. Electrical current in bismuth films with texturing such that all grains are oriented with the trigonal axis normal to the film plane is found to flow in an isotropic manner. By contrast, bismuth films with no texture such that not all grains have the same crystallographic orientation exhibit anisotropic current flow, giving rise to preferential current flow pathways in each grain depending on its orientation. Extraction of the mobility and the phase coherence length in both types of films indicates that carrier scattering is not responsible for the observed anisotropic conduction. Evidence from control experiments on antimony thin films suggests that the anisotropy is a result of bismuth's large electron effective mass anisotropy.

  8. EBSD analysis of electroplated magnetite thin films

    NASA Astrophysics Data System (ADS)

    Koblischka-Veneva, A.; Koblischka, M. R.; Teng, C. L.; Ryan, M. P.; Hartmann, U.; Mücklich, F.

    2010-05-01

    By means of electron backscatter diffraction (EBSD), we analyse the crystallographic orientation of electroplated magnetite thin films on Si/copper substrates. Varying the voltage during the electroplating procedure, the resulting surface properties are differing considerably. While a high voltage produces larger but individual grains on the surface, the surfaces become smoother on decreasing voltage. Good quality Kikuchi patterns could be obtained from all samples; even on individual grains, where the surface and the edges could be measured. The spatial resolution of the EBSD measurement could be increased to about 10 nm; thus enabling a detailed analysis of single magnetite grains. The thin film samples are polycrystalline and do not exhibit a preferred orientation. EBSD reveals that the grain size changes depending on the processing conditions, while the detected misorientation angles stay similar.

  9. Structure and ionic conductivity of well-aligned polycrystalline sodium titanogallate grown by reactive diffusion

    SciTech Connect

    Hasegawa, Ryo; Okabe, Momoko; Asaka, Toru; Ishizawa, Nobuo; Fukuda, Koichiro

    2015-09-15

    We prepared the b-axis-oriented polycrystalline Na{sub 0.85}Ti{sub 0.51}Ga{sub 4.37}O{sub 8} (NTGO) embedded in Ga{sub 2}O{sub 3}-doped Na{sub 2}Ti{sub 4}O{sub 9} matrix using the reactive diffusion technique. When the sandwich-type Ga{sub 2}TiO{sub 5}/NaGaO{sub 2}/Ga{sub 2}TiO{sub 5} diffusion couple was heated at 1323 K for 24 h, the NTGO polycrystal was readily formed in the presence of a liquid phase. The resulting polycrystalline material was characterized by X-ray diffractometry, electron microscopy and impedance spectroscopy. We mechanically processed the annealed diffusion couple and obtained the thin-plate electrolyte consisting mostly of the grain-aligned NTGO polycrystal. The ionic conductivity (σ) of the electrolyte along the common b-axis direction steadily increased from 1.3×10{sup −4} to 7.3×10{sup −3} S/cm as the temperature increased from 573 to 1073 K. There was a slope change at ca. 792 K for the Arrhenius plot of σ; the activation energies were 0.39 eV above this temperature and 0.57 eV below it. The NTGO showed the crystal structure (space group C2/m) with substantial positional disordering of one of the two Ga sites. The Na{sup +} ions occupied ca. 43% of the Wyckoff position 4i site, the deficiency of which would contribute to the relatively high ionic conductivity along the b-axis. The reactive diffusion could be widely applicable as the novel technique to the preparation of grain-aligned ceramics of multi-component systems. - Graphical abstract: We have prepared the b-axis-oriented Na{sub 0.85}Ti{sub 0.51}Ga{sub 4.37}O{sub 8} polycrystal embedded in Ga{sub 2}O{sub 3}-doped Na{sub 2}Ti{sub 4}O{sub 9} matrix by the heat treatment of sandwich-type diffusion couple of Ga{sub 2}TiO{sub 5}/NaGaO{sub 2}/Ga{sub 2}TiO{sub 5}. The resulting Na{sub 0.85}Ti{sub 0.51}Ga{sub 4.37}O{sub 8} electrolyte showed the ionic conductivity ranging from 1.3×10{sup −4} S/cm at 573 K to 7.3×10{sup −3} S/cm at 1073 K. - Highlights: • The b

  10. The effect of morphology on electron field-effect mobility in disordered c60 thin films.

    PubMed

    Kwiatkowski, Joe J; Frost, Jarvist M; Nelson, Jenny

    2009-03-01

    We present a model of polycrystalline C60 field-effect transistors (FETs) that incorporates the microscopic structural and electronic details of the C60 films. We generate disordered polycrystalline thin films by simulating the physical-vapor deposition process. We simulate electron hopping transport using a Monte Carlo method and electronic structure calculations. Our model reproduces experimentally observed FET characteristics, including electrical characteristics, electrochemical potentials, and charge mobilities. Our results suggest that even relatively disordered films have charge mobilities that are only a factor of 2 smaller than mobilities in single crystals.

  11. Deposition of hydroxyapatite thin films by Nd:YAG laser ablation: a microstructural study

    SciTech Connect

    Nistor, L.C.; Ghica, C.; Teodorescu, V.S.; Nistor, S.V. . E-mail: snistor@alpha1.infim.ro; Dinescu, M.; Matei, D.; Frangis, N.; Vouroutzis, N.; Liutas, C.

    2004-11-02

    Hydroxyapatite (HA) thin films has been successfully deposited by Nd:YAG laser ablation at {lambda} = 532 nm. The morphology and microstructure of the deposited layers was studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution electron microscopy (HREM). Polycrystalline HA films were directly obtained with the substrate at 300 deg. C and without introducing water vapors in the deposition chamber. Electron paramagnetic resonance (EPR) measurements show that the oxygen stoichiometry in the HA films is also maintained. Depositions performed at {lambda} = 335 nm laser wavelength and 300 deg. C substrate temperature resulted in polycrystalline layers of mixed composition of HA and tricalciumphosphate (TCP)

  12. Attosecond dynamical Franz-Keldysh effect in polycrystalline diamond.

    PubMed

    Lucchini, M; Sato, S A; Ludwig, A; Herrmann, J; Volkov, M; Kasmi, L; Shinohara, Y; Yabana, K; Gallmann, L; Keller, U

    2016-08-26

    Short, intense laser pulses can be used to access the transition regime between classical and quantum optical responses in dielectrics. In this regime, the relative roles of inter- and intraband light-driven electronic transitions remain uncertain. We applied attosecond transient absorption spectroscopy to investigate the interaction between polycrystalline diamond and a few-femtosecond infrared pulse with intensity below the critical intensity of optical breakdown. Ab initio time-dependent density functional theory calculations, in tandem with a two-band parabolic model, accounted for the experimental results in the framework of the dynamical Franz-Keldysh effect and identified infrared induction of intraband currents as the main physical mechanism responsible for the observations. PMID:27563093

  13. Modeling Copper Diffusion in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Guo, Da; Vasileska, Dragica; Ringhofer, Christain

    2014-06-06

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystalline, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately

  14. Phosphorus Doping of Polycrystalline CdTe by Diffusion

    SciTech Connect

    Colegrove, Eric; Albin, David S.; Guthrey, Harvey; Harvey, Steve; Burst, James; Moutinho, Helio; Farrell, Stuart; Al-Jassim, Mowafak; Metzger, Wyatt K.

    2015-06-14

    Phosphorus diffusion in single crystal and polycrystalline CdTe material is explored using various methods. Dynamic secondary ion mass spectroscopy (SIMS) is used to determine 1D P diffusion profiles. A 2D diffusion model is used to determine the expected cross-sectional distribution of P in CdTe after diffusion anneals. Time of flight SIMS and cross-sectional cathodoluminescence corroborates expected P distributions. Devices fabricated with diffused P exhibit hole concentrations up to low 1015 cm-3, however a subsequent activation anneal enabled hole concentrations greater than 1016 cm-3. CdCl2 treatments and Cu based contacts were also explored in conjunction with the P doping process.

  15. Extracting Cu Diffusion Parameters in Polycrystalline CdTe

    SciTech Connect

    Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Guo, Da; Dragica, Vasileska; Ringhofer, Christian

    2014-06-13

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystal-line, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately.

  16. Polycrystalline metasurface perfect absorbers fabricated using microsphere photolithography.

    PubMed

    Qu, Chuang; Kinzel, Edward C

    2016-08-01

    Microsphere photolithography (MPL) is a practical, cost-effective nanofabrication technique. It uses self-assembled microspheres in contact with the photoresist as microlenses. The microspheres focus incident light to a sub-diffraction limited array of photonic jets in the photoresist. This Letter explores the MPL technique to pattern metal-insulator-metal metasurfaces with near-perfect absorption at mid-wave infrared (MWIR) frequencies. Experimental results are compared to electromagnetic simulations of both the exposure process and the metasurface response. The microsphere self-assembly technique results in a polycrystalline metasurface; however, the metal-insulator-metal structure is shown to be defect tolerant. While the MPL approach imposes geometric constraints on the metasurface design, once understood, the technique can be used to create functional devices. In particular, the ability to tune the resonant wavelength with the exposure dose raises the potential of hierarchical structures.

  17. Morphological changes in polycrystalline Fe after compression and release

    NASA Astrophysics Data System (ADS)

    Gunkelmann, Nina; Tramontina, Diego R.; Bringa, Eduardo M.; Urbassek, Herbert M.

    2015-02-01

    Despite a number of large-scale molecular dynamics simulations of shock compressed iron, the morphological properties of simulated recovered samples are still unexplored. Key questions remain open in this area, including the role of dislocation motion and deformation twinning in shear stress release. In this study, we present simulations of homogeneous uniaxial compression and recovery of large polycrystalline iron samples. Our results reveal significant recovery of the body-centered cubic grains with some deformation twinning driven by shear stress, in agreement with experimental results by Wang et al. [Sci. Rep. 3, 1086 (2013)]. The twin fraction agrees reasonably well with a semi-analytical model which assumes a critical shear stress for twinning. On reloading, twins disappear and the material reaches a very low strength value.

  18. Leakage current measurements of a pixelated polycrystalline CVD diamond detector

    NASA Astrophysics Data System (ADS)

    Zain, R. M.; Maneuski, D.; O'Shea, V.; Bates, R.; Blue, A.; Cunnigham, L.; Stehl, C.; Berderman, E.; Rahim, R. A.

    2013-01-01

    Diamond has several desirable features when used as a material for radiation detection. With the invention of synthetic growth techniques, it has become feasible to look at developing diamond radiation detectors with reasonable surface areas. Polycrystalline diamond has been grown using a chemical vapour deposition (CVD) technique by the University of Augsburg and detector structures fabricated at the James Watt Nanofabrication Centre (JWNC) in the University of Glasgow in order to produce pixelated detector arrays. The anode and cathode contacts are realised by depositing gold to produce ohmic contacts. Measurements of I-V characteristics were performed to study the material uniformity. The bias voltage is stepped from -1000V to 1000V to investigate the variation of leakage current from pixel to pixel. Bulk leakage current is measured to be less than 1nA.

  19. Spherical silicon photonic microcavities: From amorphous to polycrystalline

    NASA Astrophysics Data System (ADS)

    Fenollosa, R.; Garín, M.; Meseguer, F.

    2016-06-01

    Shaping silicon as a spherical object is not an obvious task, especially when the object size is in the micrometer range. This has the important consequence of transforming bare silicon material in a microcavity, so it is able to confine light efficiently. Here, we have explored the inside volume of such microcavities, both in their amorphous and in their polycrystalline versions. The synthesis method, which is based on chemical vapor deposition, causes amorphous microspheres to have a high content of hydrogen that produces an onionlike distributed porous core when the microspheres are crystallized by a fast annealing regime. This substantially influences the resonant modes. However, a slow crystallization regime does not yield pores, and produces higher-quality-factor resonances that could be fitted to the Mie theory. This allows the establishment of a procedure for obtaining size calibration standards with relative errors of the order of 0.1%.

  20. Predicting fracture in micron-scale polycrystalline silicon MEMS structures.

    SciTech Connect

    Hazra, Siddharth S.; de Boer, Maarten Pieter; Boyce, Brad Lee; Ohlhausen, James Anthony; Foulk, James W., III; Reedy, Earl David, Jr.

    2010-09-01

    Designing reliable MEMS structures presents numerous challenges. Polycrystalline silicon fractures in a brittle manner with considerable variability in measured strength. Furthermore, it is not clear how to use a measured tensile strength distribution to predict the strength of a complex MEMS structure. To address such issues, two recently developed high throughput MEMS tensile test techniques have been used to measure strength distribution tails. The measured tensile strength distributions enable the definition of a threshold strength as well as an inferred maximum flaw size. The nature of strength-controlling flaws has been identified and sources of the observed variation in strength investigated. A double edge-notched specimen geometry was also tested to study the effect of a severe, micron-scale stress concentration on the measured strength distribution. Strength-based, Weibull-based, and fracture mechanics-based failure analyses were performed and compared with the experimental results.

  1. Creep behavior for advanced polycrystalline SiC fibers

    SciTech Connect

    Youngblood, G.E.; Jones, R.H.; Kohyama, Akira

    1997-04-01

    A bend stress relaxation (BSR) test has been utilized to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Qualitative, S-shaped 1hr BSR curves were compared for three selected advanced SiC fiber types and standard Nicalon CG fiber. The temperature corresponding to the middle of the S-curve (where the BSR parameter m = 0.5) is a measure of a fiber`s thermal stability as well as it creep resistance. In order of decreasing thermal creep resistance, the measured transition temperatures were Nicalon S (1450{degrees}C), Sylramic (1420{degrees}C), Hi-Nicalon (1230{degrees}C) and Nicalon CG (1110{degrees}C).

  2. Fatigue effect on polarization switching dynamics in polycrystalline bulk ferroelectrics

    NASA Astrophysics Data System (ADS)

    Zhukov, S.; Glaum, J.; Kungl, H.; Sapper, E.; Dittmer, R.; Genenko, Y. A.; von Seggern, H.

    2016-08-01

    Statistical distribution of switching times is a key information necessary to describe the dynamic response of a polycrystalline bulk ferroelectric to an applied electric field. The Inhomogeneous Field Mechanism (IFM) model offers a useful tool which allows extraction of this information from polarization switching measurements over a large time window. In this paper, the model was further developed to account for the presence of non-switchable regions in fatigued materials. Application of the IFM-analysis to bipolar electric cycling induced fatigue process of various lead-based and lead-free ferroelectric ceramics reveals different scenarios of property degradation. Insight is gained into different underlying fatigue mechanisms inherent to the investigated systems.

  3. Structural templating of multiple polycrystalline layers in organic photovoltaic cells

    SciTech Connect

    Lassiter, Brian E; Lunt, Richard R; Renshaw, Kyle; Forrest, Stephen R.

    2010-09-01

    We demonstrate that organic photovoltaic cell performance is influenced by changes in the crystalline orientation of composite layer structures. A 1.5 nm thick self-organized, polycrystalline template layer of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) orients subsequently deposited layers of a diindenoperylene exciton blocking layer, and the donor, copper phthalocyanine (CuPc). Control over the crystalline orientation of the CuPc leads to changes in its frontier energy levels, absorption coefficient, and surface morphology, resulting in an increase of power conversion efficiency at 1 sun from 1.42 ± 0.04% to 2.19 ± 0.05% for a planar heterojunction and from 1.89 ± 0.05% to 2.49 ± 0.03% for a planar-mixed heterojunction.

  4. Ion implantation of erbium into polycrystalline cadmium telluride

    SciTech Connect

    Ushakov, V. V. Klevkov, Yu. V.; Dravin, V. A.

    2015-05-15

    The specific features of the ion implantation of polycrystalline cadmium telluride with grains 20–1000 μm in dimensions are studied. The choice of erbium is motivated by the possibility of using rare-earth elements as luminescent “probes” in studies of the defect and impurity composition of materials and modification of the composition by various technological treatments. From the microphotoluminescence data, it is found that, with decreasing crystal-grain dimensions, the degree of radiation stability of the material is increased. Microphotoluminescence topography of the samples shows the efficiency of the rare-earth probe in detecting regions with higher impurity and defect concentrations, including regions of intergrain boundaries.

  5. Electronic properties of polycrystalline graphene under large local strain

    SciTech Connect

    He, Xin; Tang, Ning E-mail: geweikun@mail.tsinghua.edu.cn Duan, Junxi; Mei, Fuhong; Meng, Hu; Lu, Fangchao; Xu, Fujun; Yang, Xuelin; Gao, Li; Wang, Xinqiang; Shen, Bo E-mail: geweikun@mail.tsinghua.edu.cn; Ge, Weikun E-mail: geweikun@mail.tsinghua.edu.cn

    2014-06-16

    To explore the transport properties of polycrystalline graphene under large tensile strain, a strain device has been fabricated using piezocrystal to load local strain onto graphene, up to 22.5%. Ionic liquid gate whose capability of tuning carrier density being much higher than that of a solid gate is used to survey the transfer characteristics of the deformed graphene. The conductance of the Dirac point and field effect mobility of electrons and holes is found to decrease with increasing strain, which is attributed to the scattering of the graphene grain boundaries, the strain induced change of band structure, and defects. However, the transport gap is still not opened. Our study is helpful to evaluate the application of graphene in stretchable electronics.

  6. Radiation hardness of three-dimensional polycrystalline diamond detectors

    SciTech Connect

    Lagomarsino, Stefano Sciortino, Silvio; Bellini, Marco; Corsi, Chiara; Cindro, Vladimir; Kanxheri, Keida; Servoli, Leonello; Morozzi, Arianna; Passeri, Daniele; Schmidt, Christian J.

    2015-05-11

    The three-dimensional concept in particle detection is based on the fabrication of columnar electrodes perpendicular to the surface of a solid state radiation sensor. It permits to improve the radiation resistance characteristics of a material by lowering the necessary bias voltage and shortening the charge carrier path inside the material. If applied to a long-recognized exceptionally radiation-hard material like diamond, this concept promises to pave the way to the realization of detectors of unprecedented performances. We fabricated conventional and three-dimensional polycrystalline diamond detectors, and tested them before and after neutron damage up to 1.2 ×10{sup 16 }cm{sup −2}, 1 MeV-equivalent neutron fluence. We found that the signal collected by the three-dimensional detectors is up to three times higher than that of the conventional planar ones, at the highest neutron damage ever experimented.

  7. Modeling Crack Propagation in Polycrystalline Microstructure Using Variational Multiscale Method

    DOE PAGES

    Sun, S.; Sundararaghavan, V.

    2016-01-01

    Crack propagation in a polycrystalline microstructure is analyzed using a novel multiscale model. The model includes an explicit microstructural representation at critical regions (stress concentrators such as notches and cracks) and a reduced order model that statistically captures the microstructure at regions far away from stress concentrations. Crack propagation is modeled in these critical regions using the variational multiscale method. In this approach, a discontinuous displacement field is added to elements that exceed the critical values of normal or tangential tractions during loading. Compared to traditional cohesive zone modeling approaches, the method does not require the use of any specialmore » interface elements in the microstructure and thus can model arbitrary crack paths. The capability of the method in predicting both intergranular and transgranular failure modes in an elastoplastic polycrystal is demonstrated under tensile and three-point bending loads.« less

  8. Polycrystalline metasurface perfect absorbers fabricated using microsphere photolithography.

    PubMed

    Qu, Chuang; Kinzel, Edward C

    2016-08-01

    Microsphere photolithography (MPL) is a practical, cost-effective nanofabrication technique. It uses self-assembled microspheres in contact with the photoresist as microlenses. The microspheres focus incident light to a sub-diffraction limited array of photonic jets in the photoresist. This Letter explores the MPL technique to pattern metal-insulator-metal metasurfaces with near-perfect absorption at mid-wave infrared (MWIR) frequencies. Experimental results are compared to electromagnetic simulations of both the exposure process and the metasurface response. The microsphere self-assembly technique results in a polycrystalline metasurface; however, the metal-insulator-metal structure is shown to be defect tolerant. While the MPL approach imposes geometric constraints on the metasurface design, once understood, the technique can be used to create functional devices. In particular, the ability to tune the resonant wavelength with the exposure dose raises the potential of hierarchical structures. PMID:27472578

  9. Temperature dependence of the internal friction of polycrystalline indium

    NASA Astrophysics Data System (ADS)

    Sapozhnikov, K. V.; Golyandin, S. N.; Kustov, S. B.

    2010-12-01

    The temperature dependences of the internal friction and the elastic modulus of polycrystalline indium have been investigated in the temperature range 7-320 K at oscillatory loading frequencies of approximately 100 kHz. The effect of temperature on the amplitude dependence and the effect of high-amplitude loading at 7 K on the temperature and amplitude dependences of the internal friction of indium have been analyzed. It has been demonstrated that the thermocycling leads to microplastic deformation of indium due to the anisotropy of thermal expansion and the appearance of a "recrystallization" maximum in the spectrum of the amplitude-dependent internal friction. The conclusion has been drawn that the bulk diffusion of vacancies and impurities begins at temperatures of approximately 90 K and that, at lower temperatures, the diffusion occurs in the vicinity of dislocations. It has been revealed that the high-temperature internal friction background becomes noticeable after the dissolution of Cottrell atmospheres.

  10. Polycrystalline silicon micromachining: a new technology for integrated sensors.

    PubMed

    Howe, R T

    1986-01-01

    Polycrystalline silicon (poly-Si) micromechanical structures can be made by selectively etching an underlying sacrificial oxide layer. Advantages of this micromachining technique are its simplicity and compatibility with conventional integrated-circuit processing. Compressive internal stress in poly-Si films constrains the dimensions of microstructures; fortunately, it can be reduced through annealing. Fabrication of an integrated vapor sensor incorporating a resonant poly-Si microbridge and on-chip NMOS circuitry is described. Frequency response measurements imply that poly-Si films have a Young's modulus of 4 X 10(10) Nm-2, substantially lower than crystalline silicon. A potential application of poly-Si micromachining is fabrication of an integrated pressure transducer; evaluation of this device identifies areas for further research.

  11. Stress enhanced diffusion of krypton ions in polycrystalline titanium

    SciTech Connect

    Nsengiyumva, S.; Raji, A. T.; Rivière, J. P.; Britton, D. T.; Härting, M.

    2014-07-14

    An experimental investigation on the mutual influence of pre-existing residual stress and point defect following ion implantation is presented. The study has been carried out using polycrystalline titanium samples energetically implanted with krypton ions at different fluences. Ion beam analysis was used to determine the concentration profile of the injected krypton ions, while synchrotron X-ray diffraction has been used for stress determination. Ion beam analysis and synchrotron X-ray diffraction stress profile measurements of the implanted titanium samples show a clear evidence of stress-enhanced diffusion of krypton ions in titanium. It is further observed that for the titanium samples implanted at low fluence, ion implantation modifies the pre-existing residual stress through the introduction of point and open volume defects. The stress fields resulting from the ion implantation act to drift the krypton inclusions towards the surface of titanium.

  12. Polycrystalline diamond MEMS resonator technology for sensor applications.

    SciTech Connect

    Sullivan, John P.; Aslam, Dean; Sepulveda-Alancastro, Nelson

    2005-07-01

    Due to material limitations of poly-Si resonators, polycrystalline diamond (poly-C) has been explored as a new MEMS resonator material. The poly-C resonators are designed, fabricated and tested using electrostatic (Michigan State University) and piezoelectric (Sandia National Laboratories) actuation methods, and the results are compared. For comparable resonator structures, although the resonance frequencies are similar, the measured Q values in the ranges of 1000-2000 and 10,000-15,000 are obtained for electrostatic and piezoelectric actuation methods, respectively. The difference in Q for the two methods is related to different pressures used during the measurement and not to the method of measurement. For the poly-C cantilever beam resonators, the highest value of their quality factor (Q) is reported for the first time (15,263).

  13. Monitoring of deformation induced microcracking in polycrystalline NiAl

    SciTech Connect

    Wanner, A.; Schietinger, B.; Bidlingmaier, T.; Zalkind, H.; Arzt, E.

    1995-08-01

    Microcracking in polycrystalline near-stoichiometric NiAl produced by room temperature plastic deformation under uniaxial compression was investigated by means of optical microscopy, velocity of sound measurements, and acoustic emission monitoring. Results show that strains greater than 2% are required to produce microcrack populations which can be evaluated by microscopical investigation or velocity of sound measurements. However, acoustic emission monitoring during compression testing indicates that microcracking starts at about 0.7% compressive plastic strain which is identical with the typical tensile fracture strain for NiAl. Thus it is concluded that there is little or no stable microcracking prior to failure in tension. Acoustic emission results show also that the process of microcracking does not primarily occur during the applied compressive deformation. A considerable fraction of the microcracking takes place during the quasi-elastic unloading following deformation.

  14. Method for producing silicon thin-film transistors with enhanced forward current drive

    DOEpatents

    Weiner, Kurt H.

    1998-01-01

    A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

  15. Method for producing silicon thin-film transistors with enhanced forward current drive

    DOEpatents

    Weiner, K.H.

    1998-06-30

    A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

  16. A versatile platform for magnetostriction measurements in thin films

    NASA Astrophysics Data System (ADS)

    Pernpeintner, M.; Holländer, R. B.; Seitner, M. J.; Weig, E. M.; Gross, R.; Goennenwein, S. T. B.; Huebl, H.

    2016-03-01

    We present a versatile nanomechanical sensing platform for the investigation of magnetostriction in thin films. It is based on a doubly clamped silicon nitride nanobeam resonator covered with a thin magnetostrictive film. Changing the magnetization direction within the film plane by an applied magnetic field generates a magnetoelastic stress and thus changes the resonance frequency of the nanobeam. A measurement of the resulting resonance frequency shift, e.g., by optical interferometry, allows to quantitatively determine the magnetostriction constants of the thin film. In a proof-of-principle experiment, we determine the magnetostriction constants of a 10 nm thick polycrystalline cobalt film, showing very good agreement with literature values. The presented technique aims, in particular, for the precise measurement of magnetostriction in a variety of (conducting and insulating) thin films, which can be deposited by, e.g., electron beam deposition, thermal evaporation, or sputtering.

  17. Electrodeposited CulnSe2 Thin Film Junctions

    NASA Technical Reports Server (NTRS)

    Raffaelle, R. P.; Mantovani, J. G.; Bailey, S. G.; Hepp, A. F.; Gordon, E. M.; Haraway, R.

    1998-01-01

    We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

  18. Electrodeposited CuInSe2 Thin Film Junctions

    NASA Technical Reports Server (NTRS)

    Raffaelle, R. P.; Mantovani, J. G.; Bailey, S. G.; Hepp, A. F.; Gordon, E. M.; Haraway, R.

    1997-01-01

    We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

  19. Compositional dependence of Pb(Mg1/3,Nb2/3)O3-PbTiO3 piezoelectric thin films by combinatorial sputtering

    NASA Astrophysics Data System (ADS)

    Kurokawa, Fumiya; Tsujiura, Yuichi; Hida, Hirotaka; Kanno, Isaku

    2014-09-01

    We evaluated the compositional dependence of Pb(Mg1/3,Nb2/3)O3-PbTiO3 (PMN-PT) polycrystalline thin films by combinatorial sputtering. We prepared compositional gradient (1 - x)PMN-xPT polycrystalline thin films with preferential orientation along the <001> direction in the composition range of x = 0-0.62. We determined that the morphotropic phase boundary (MPB) composition of PMN-PT polycrystalline thin film existed at around x = 0.35, from the X-ray diffraction (XRD) measurements. The maximum value of relative dielectric constants (ɛr = 1498) was obtained at approximately x = 0.23. On the other hand, the piezoelectric coefficients (|e31,f| = 14.1 C/m2) peaked at the determined MPB composition of x = 0.35. From the results of the compositional dependence of dielectric and piezoelectric characteristics, the FOM (e_{31,\\text{f}}^{2}/\\varepsilon _{0}\\varepsilon _{\\text{r}}) of the PMN-PT (x = 0.35) thin film reached 21 GPa, which is much higher than that of the other polycrystalline piezoelectric thin films. These results suggest that PMN-PT (x = 0.35) thin film is a promising material for high-efficiency piezoelectric MEMS energy harvesters.

  20. Impact of graphene polycrystallinity on the performance of graphene field-effect transistors

    SciTech Connect

    Jiménez, David; Chaves, Ferney; Cummings, Aron W.; Van Tuan, Dinh; Kotakoski, Jani; Roche, Stephan

    2014-01-27

    We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices.

  1. Surface smoothing effect of an amorphous thin film deposited by atomic layer deposition on a surface with nano-sized roughness

    SciTech Connect

    Lau, W. S. Wan, X.; Xu, Y.; Wong, H.; Zhang, J.; Luo, J. K.

    2014-02-15

    Previously, Lau (one of the authors) pointed out that the deposition of an amorphous thin film by atomic layer deposition (ALD) on a substrate with nano-sized roughness probably has a surface smoothing effect. In this letter, polycrystalline zinc oxide deposited by ALD onto a smooth substrate was used as a substrate with nano-sized roughness. Atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) were used to demonstrate that an amorphous aluminum oxide thin film deposited by ALD can reduce the surface roughness of a polycrystalline zinc oxide coated substrate.

  2. Effects of duty cycle on properties of CIGS thin films fabricated by pulse-reverse electrodeposition technique

    NASA Astrophysics Data System (ADS)

    Jadhav, Harsharaj S.; Kalubarme, Ramchandra S.; Ahn, SeJin; Yun, Jae Ho; Park, Chan-Jin

    2013-03-01

    DC and pulse-reverse electrodeposition mode were employed for the deposition of polycrystalline Cu(In,Ga)Se2 thin films. In comparison with DC electrodeposition mode, films obtained by pulse-reverse electrodeposition were smoother, denser and more uniform with good adhesion. The Ga content in final composition of CIGS thin film was improved in pulse-reverse electrodeposition mode. In addition, pulse-reverse electrodeposited CIGS thin films were more crystalline with chalcopyrite structure. The compact morphology without pores in the deposit was achieved in the pulse-reverse electrodeposited CIGS thin films by varying duty cycle.

  3. Synthesis and Characterization of Zirconium Tungstate Ultra-Thin Fibers

    SciTech Connect

    Zhang, Lifeng; Howe, Jane Y; Fong, Hao; Zhang, Yan

    2009-01-01

    This study reports an innovative method of electrospinning followed by pyrolysis to synthesize zirconium tungstate (ZrW2O8), a material with negative coefficient of thermal expansion (CTE), in ultra-thin fiber form. Morphologies and microstructures of the as-electrospun precursor fibers, the heat-treated intermediate fibers, and the final ZrW2O8 ultra-thin fibers were characterized by SEM, XRD, and TEM. The ZrW2O8 ultra-thin fibers had diameters in the sub-micrometer range with aspect ratios larger than 100; these fibers were polycrystalline, and consisted of single crystalline ZrW2O8 crystallites with sizes of 30-50 nm and surface roughness of several nanometers. The ZrW2O8 ultra-thin fibers are expected to outperform spherically, cylindrically, and/or irregularly shaped polycrystalline ZrW2O8 particles for the development of composites with precisely controlled CTEs. Additionally, this reported method could be utilized as a general approach to convert nano-scaled inorganic particles into fibers.

  4. Characterization of deformation near grain boundaries in polycrystalline metals

    NASA Astrophysics Data System (ADS)

    Seal, James Robert

    Understanding and describing plastic deformation in polycrystalline materials is fundamentally challenging due to the complex atomic rearrangements that must occur at grain boundaries. These atomic rearrangements can have long-range and substantial impacts on a material's bulk behavior and material properties. Thus, there is a significant need to develop new techniques to study, correlate, and describe deformation accommodation at grain boundaries. Understanding how grain boundaries accommodate plastic deformation at the microscale will provide new insight into the evolution of heterogeneous deformation, stress concentration, and damage nucleation. A series of comprehensive experiments have been conducted in order to develop a quantitative and crystallographically based understanding of the relationships between deformation behavior, material microstructure, and slip transfer mechanisms across grain boundaries in polycrystalline materials. Slip transfer events in polycrystalline metals were investigated using novel analysis techniques in scanning electron microscopy (SEM). The objective of these experiments was to correlate observations of slip transfer with a geometric parameter m', which can be used to identify and predict crystallographic arrangements that are better suited for slip transfer. An emphasis was placed on understanding how the parameter m' can be correlated with heterogeneities in local lattice orientations and local stresses near grain boundaries. A large population of slip transfer reactions across α/beta phase boundaries in Ti-5Al-2.5Sn were imaged by SEM and slip system activity was characterized using electron backscattered diffraction (EBSD) and slip trace analysis. Statistical correlations identified that slip transfer across the α/beta phase boundary was strongly influenced by slip plane alignment across the interface. Slip direction alignment was not strongly correlated to observations of slip transfer and the parameter m' was not useful

  5. Multiple Diamond Anvil (MDA) apparatus using nano-polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Irifune, T.; Kunimoto, T.; Tange, Y.; Shinmei, T.; Isobe, F.; Kurio, A.; Funakoshi, K.

    2011-12-01

    Thanks to the great efforts by Dave Mao, Bill Bassett, Taro Takahashi, and their colleagues at the University of Rochester through 1960s-70s, diamond anvil cell (DAC) became a major tool to investigate the deep Earth after its invention by scientists at NBS in 1958. DAC can now cover almost the entire pressure and temperature regimes of the Earth's interior, which seems to have solved the longstanding debate on the crystal structure of iron under the P-T conditions of the Earth's inner core. In contrast, various types of static large-volume presses (LVP) have been invented, where tungsten carbide has conventionally been used as anvils. Kawai-type multianvil apparatus (MA), which utilize 6 first-stage harden steel and 8 tungsten carbide anvils, is the most successful LVP, and has been used for accurate measurements of phase transitions, physical properties, element partitioning, etc. at high pressure and temperature. However, pressures using tungsten carbide as the second-stage anvils have been limited to about 30 GPa due to significant plastic deformation of the anvils. Efforts have been made to expand this pressure limit by replacing tungsten carbide anvils with harder sintered diamond (SD) anvils over the last two decades, but the pressures available in KMA with SD anvils have still been limited to below 100 GPa. We succeeded to produce nano-polycrystalline diamond (NPD or HIME-Diamond) in 2003, which is known to have ultrahigh hardness, very high toughness and elastic stiffness, high transmittance of light, relatively low thermal conductivity. These properties are feasible for its use as anvils, and some preliminary experiments of application of NPD anvils to laser heated DAC have successfully made in the last few years. We are now able to synthesize NPD rods with about 1cm in both diameter and length using a newly constructed 6000-ton KMA at Geodynamics Research Center, Ehime University, and have just started to apply this new polycrystalline diamond as anvils

  6. Physical properties optimization of polycrystalline LiFeAs

    NASA Astrophysics Data System (ADS)

    Singh, Shiv J.; Gräfe, Uwe; Beck, Robert; Wolter, Anja U. B.; Grafe, Hans-Joachim; Hess, Christian; Wurmehl, Sabine; Büchner, Bernd

    2016-10-01

    We present a study of parameter optimization for synthesizing truly stoichiometric polycrystalline LiFeAs. Stoichiometric LiFeAs has been prepared in a very broad range of synthesis temperature (200-900 °C) under otherwise exactly the same conditions, and has been characterized by structural, magnetic, transport, nuclear quadrupole resonance (NQR), and specific heat measurements. Our study showed that the LiFeAs phase is formed at 200 °C with a large amount of impurity phases. The amount of these impurity phases reduces with increasing synthesis temperature and the clean LiFeAs phase is obtained at a synthesis temperature of 600 °C. Magnetic susceptibility and resistivity measurements confirmed that the superconducting properties such as the critical temperature Tc, and the upper critical field Hc2 do not depend on the synthesis temperature (≤ 700 °C), remaining at almost the same value of ∼19 K and ∼40 T, respectively. However, the width ΔTc of the transition and the NQR line width decrease with increasing the synthesis temperature and reached to minimum value for the synthesis temperature of 600 °C. Our careful analysis suggests that the best sample obtained at 600 °C is optimal concerning the low resistivity, high residual resistivity ratio (RRR), low ΔTc, high Tc and Hc2, and a small NQR line width with values which are comparable to that reported for LiFeAs single crystals. Specific heat measurements confirmed the bulk superconducting nature of the samples. The Hc2 value estimated from the specific heat is consistent with that of the resistivity measurements. Concisely, 600 °C synthesis temperature yields optimal high quality polycrystalline LiFeAs bulk samples. Further improvement of the quality of the sample prepared at 600 °C could be obtained by a controlled slow cooling process. Microstructural analysis reveals that the abundance of micro-cracks becomes strongly reduced by the slow cooling process, resulting in an increase in clean and

  7. Phase field modeling of grain growth in porous polycrystalline solids

    NASA Astrophysics Data System (ADS)

    Ahmed, Karim E.

    The concurrent evolution of grain size and porosity in porous polycrystalline solids is a technically important problem. All the physical properties of such materials depend strongly on pore fraction and pore and grain sizes and distributions. Theoretical models for the pore-grain boundary interactions during grain growth usually employ restrictive, unrealistic assumptions on the pore and grain shapes and motions to render the problem tractable. However, these assumptions limit the models to be only of qualitative nature and hence cannot be used for predictions. This has motivated us to develop a novel phase field model to investigate the process of grain growth in porous polycrystalline solids. Based on a dynamical system of coupled Cahn-Hilliard and All en-Cahn equations, the model couples the curvature-driven grain boundary motion and the migration of pores via surface diffusion. As such, the model accounts for all possible interactions between the pore and grain boundary, which highly influence the grain growth kinetics. Through a formal asymptotic analysis, the current work demonstrates that the phase field model recovers the corresponding sharp-interface dynamics of the co-evolution of grain boundaries and pores; this analysis also fixes the model kinetic parameters in terms of real materials properties. The model was used to investigate the effect of porosity on the kinetics of grain growth in UO2 and CeO2 in 2D and 3D. It is shown that the model captures the phenomenon of pore breakaway often observed in experiments. Pores on three- and four- grain junctions were found to transform to edge pores (pores on two-grain junction) before complete separation. The simulations demonstrated that inhomogeneous distribution of pores and pore breakaway lead to abnormal grain growth. The simulations also showed that grain growth kinetics in these materials changes from boundary-controlled to pore-controlled as the amount of porosity increases. The kinetic growth

  8. Computational characterizations on the grain-size-dependent properties of polycrystalline nanomaterials

    NASA Astrophysics Data System (ADS)

    Hyun, Sangil; Park, Youngho; Kim, Hyo-tae

    2015-12-01

    The microstructures of real nanomaterials can be quite complex with variety of grain sizes aligned in different crystal orientations and structural defects possibly created in a fabrication process. Material properties of these polycrystalline materials are generally known strongly dependent on the nanoscale morphology. First principle calculations based on the density functional theory need to be employed in these atomic characterizations; however, it may not be suitable for the polycrystalline nanomaterials for which large number of atoms is required in the simulation model. Instead, a mesoscale computer simulation scheme is employed to investigate these morphology-dependent mechanical properties of polycrystalline materials. We demonstrated the Voronoi construction of various polycrystalline atomic models such as two-dimensional graphene and three-dimensional silicon carbide. General behavior of the mechanical characteristics of the bulk nanostructured silicon carbide (SiC) was addressed, particularly the contribution of grain sizes. From this study, the optimal grain size was determined near 10 nm under tensile and compressive deformations.

  9. Recent developments in polycrystalline diamond-drill-bit design

    SciTech Connect

    Huff, C.F.; Varnado, S.G.

    1980-05-01

    Development of design criteria for polycrystalline diamond compact (PDC) drill bits for use in severe environments (hard or fractured formations, hot and/or deep wells) is continuing. This effort consists of both analytical and experimental analyses. The experimental program includes single point tests of cutters, laboratory tests of full scale bits, and field tests of these designs. The results of laboratory tests at simulated downhole conditions utilizing new and worn bits are presented. Drilling at simulated downhole pressures was conducted in Mancos Shale and Carthage Marble. Comparisons are made between PDC bits and roller cone bits in drilling with borehole pressures up to 5000 psi (34.5 PMa) with oil and water based muds. The PDC bits drilled at rates up to 5 times as fast as roller bits in the shale. In the first field test, drilling rates approximately twice those achieved with conventional bits were achieved with a PDC bit. A second test demonstrated the value of these bits in correcting deviation and reaming.

  10. Anomalous kinetic roughening during anodic dissolution of polycrystalline Fe.

    PubMed

    Córdoba-Torres, P; Bastos, I N; Nogueira, R P

    2008-03-01

    Dynamics of surface roughness during polycrystalline pure iron electrodissolution is investigated at constant current density by means of ex situ atomic force microscopy. The scaling of the local surface width reveals that surface kinetic roughening is anomalous with both the exponents of local roughness, alpha(loc) , and growth, beta , close to 1 pointing out that interface evolution is unstable. We show that this anomalous unstable behavior results from the development of a faceted surface structure exposing different crystal orientations. The presence of smooth faceted walls is consistent with the value alpha(local) approximately 1 , whereas the difference in the dissolution rates on the different crystallographic planes account for the nonlocal effects causing the unstable growth. Results are discussed in the context of a recently reported anomalous scaling which accounts for dynamics of self-organized depinning models displaying faceted interfaces. The influence of the electrode potential on the dissolution rates of the different crystallographic planes, along with its effect on the mobility of metal adatoms, are discussed to be behind the complex behavior of local roughness when the current density is varied. PMID:18517390

  11. Deformation twinning in a polycrystalline magnesium alloy during dynamic compression

    NASA Astrophysics Data System (ADS)

    Hustedt, Caleb; Lloyd, Jeffrey; Lambert, Paul; Kannan, Vignesh; Casem, Daniel; Ramesh, K. T.; Sinclair, Nicholas; Becker, Richard; Hufnagel, Todd

    We report the results of combined in situ x-ray diffraction studies and crystal plasticity modeling of deformation twinning in polycrystalline magnesium during dynamic compression. Diffraction experiments were conducted at the Dynamic Compression Sector (DCS) of the Advanced Photon Source, on magnesium alloy (AZ31B) specimens (with various crystallographic textures) loaded at strain rates of ~1000 s-1 in a compression Kolsky bar. The diffraction patterns, recorded with temporal resolution of 5-10 microseconds, provide information about the evolution of crystallographic texture during deformation, which we interpret in terms of the twinning mechanism (so-called ``extension'' or ``tensile'' twinning). We compare our observations quantitatively with predictions of the evolution of crystallographic texture from an efficient reduced crystal plasticity model. This model explicitly accounts for basal slip and extension twinning on a rate-independent basis, but treats other mechanisms (pyramidal and prismatic slip) as isotropic, rate-dependent functions. This combination yields substantial improvements in efficiency over full crystal-plasticity models while retaining key aspects of the most important deformation mechanisms.

  12. Processing of transparent polycrystalline AlON:Ce3+ scintillators

    DOE PAGES

    Chen, Ching -Fong; Yang, Pin; King, Graham; Tegtmeier, Eric L.

    2015-10-23

    A new polycrystalline ceramic scintillator is reported for potential use in radiation detection and medical imaging applications. The goal was to develop cerium-activated aluminum oxynitride (AlON:Ce3+) ceramics, which can be produced using ceramic processes in comparison to the high-cost, low-yield single-crystal growth technique. A phase pure AlON:Ce3+ powder with cubic symmetry was successfully synthesized at high temperature under a reducing atmosphere to convert Ce4+ to Ce3+ in the solid solution. We explored two different activator concentrations (0.5 and 1.0 mol%). Fully dense and transparent AlON:Ce3+ ceramics were produced by a liquid-phase-assisted pressureless sintering. The crystal field splitting around the Ce3+more » activator in the AlON was comparable to the splitting induced by Br₋ and the Cl₋ ligands, which produced an emission spectrum perfectly matching the maximum quantum efficiency range of the photomultiplier tube for radiation detection. Both optical excitation and radiation ionizations in AlON:Ce3+ were demonstrated. Lastly, challenges and mechanisms related to the radioluminescence efficiency are discussed.« less

  13. High-power TSP bits. [Thermally Stable Polycrystalline diamond

    SciTech Connect

    Cohen, J.H.; Maurer, W.C. ); Westcott, P.A. )

    1994-03-01

    This paper reviews a three-year R D project to develop advanced thermally stable polycrystalline diamond (TSP) bits that can operate at power levels 5 to 10 times greater than those typically delivered by rotary rigs. These bits are designed to operate on advanced drilling motors that drill 3 to 6 times faster than rotary rigs. TSP bit design parameters that were varied during these tests include cutter size, shape, density, and orientation. Drilling tests conducted in limestone, sandstone, marble, and granite blocks showed that these optimized bits drilled many of these rocks at 500 to 1,000 ft/hr (150 to 300 m/h), compared to 50 to 100 ft/hr (15 to 30 m/h) for roller bits. These tests demonstrated that TSP bits are capable of operating at the high speeds and high torques delivered by advanced drilling motors now being developed. These advanced bits and motors are designed for use in slim-hole and horizontal drilling applications.

  14. Experimental measurement of acoustic plasmons in polycrystalline palladium

    NASA Astrophysics Data System (ADS)

    Garrity, Patrick L.

    2013-03-01

    An experimental study of collective oscillations in Pd covering the region of very low energy and momentum transfers is reported. Through Dynamic Electron Scattering spectroscopy, structure factor spectra were measured from 80 K to 298 K on a bulk polycrystalline Pd sample. Here we report the first experimental evidence of damped acoustic plasmons and their evolution to the single-particle excitation continuum. The acoustic plasmons follow a linear dispersion and are experimentally shown to be a separate and distinct resonance mode from acoustic surface plasmons. Calculations of the dielectric function employed a model that incorporates complete mixing of two conduction bands with contributions from both interband and intraband transitions. The model was used in computational studies that focused on specific experimental results to aid the characterization and understanding of the plasmon behavior. We found that the Pd acoustic plasmon energy matched the longitudinal phonon anomaly that has sparked numerous theoretical reports on the possible energetic coupling of these modes. Further experimental evidence of plasmon and phonon dynamical processes are found in the linewidth analysis of the data. The primary decay mechanism of the plasmons is interpreted to be strong phonon-assisted interband transitions. Further spectral features and the plasmon velocity are also reported.

  15. Magnetooptical Voigt effect in rippled polycrystalline Co films

    NASA Astrophysics Data System (ADS)

    Arranz, Miguel A.; Colino, José M.

    2016-10-01

    The magneto-optical properties of eroded polycrystalline Co films were investigated using Kerr and Voigt magnetometry. Both techniques showed the existence of two magnetization axes, parallel and perpendicular to the ripples direction. The study on the polarization rotation of the transmitted light revealed a fine magnetic birefringence correlated to that two-axes magnetic structure. Additionally, the field depencence of that induced rotation depicted asymmetric hysteresis loops, comprising linear (Faraday) and quadratic (Voigt) dependences on the in-plane magnetic field applied to these rippled Co films. This latter contribution, depending on the spin-orbit coupling in crystalline systems, is here uncovered from the different mechanisms for reversing the magnetization along the symmetry axes of the ripples array. That dissimilarity enabled us to characterize its magnetooptical tensor with a two-fold symmetry, yielding the occurrence of magnetic birefringence in the transmitted light. This Voigt effect in uniaxially patterned Co films can be satisfactorily explained in the frame of magnetization reversal along that two-axes magnetic structure.

  16. Distributions of methyl group rotational barriers in polycrystalline organic solids

    SciTech Connect

    Beckmann, Peter A. E-mail: wangxianlong@uestc.edu.cn; Conn, Kathleen G.; Mallory, Clelia W.; Mallory, Frank B.; Rheingold, Arnold L.; Rotkina, Lolita; Wang, Xianlong E-mail: wangxianlong@uestc.edu.cn

    2013-11-28

    We bring together solid state {sup 1}H spin-lattice relaxation rate measurements, scanning electron microscopy, single crystal X-ray diffraction, and electronic structure calculations for two methyl substituted organic compounds to investigate methyl group (CH{sub 3}) rotational dynamics in the solid state. Methyl group rotational barrier heights are computed using electronic structure calculations, both in isolated molecules and in molecular clusters mimicking a perfect single crystal environment. The calculations are performed on suitable clusters built from the X-ray diffraction studies. These calculations allow for an estimate of the intramolecular and the intermolecular contributions to the barrier heights. The {sup 1}H relaxation measurements, on the other hand, are performed with polycrystalline samples which have been investigated with scanning electron microscopy. The {sup 1}H relaxation measurements are best fitted with a distribution of activation energies for methyl group rotation and we propose, based on the scanning electron microscopy images, that this distribution arises from molecules near crystallite surfaces or near other crystal imperfections (vacancies, dislocations, etc.). An activation energy characterizing this distribution is compared with a barrier height determined from the electronic structure calculations and a consistent model for methyl group rotation is developed. The compounds are 1,6-dimethylphenanthrene and 1,8-dimethylphenanthrene and the methyl group barriers being discussed and compared are in the 2–12 kJ mol{sup −1} range.

  17. Stress-rupture behavior of small diameter polycrystalline alumina fibers

    NASA Technical Reports Server (NTRS)

    Yun, Hee Mann; Goldsby, Jon C.; Dicarlo, James A.

    1993-01-01

    Continuous length polycrystalline alumina fibers are candidates as reinforcement in high temperature composite materials. Interest therefore exists in characterizing the thermomechanical behavior of these materials, obtaining possible insights into underlying mechanisms, and understanding fiber performance under long term use. Results are reported on the time-temperature dependent strength behavior of Nextel 610 and Fiber FP alumina fibers with grain sizes of 100 and 300 nm, respectively. Below 1000 C and 100 hours, Nextel 610 with the smaller grain size had a greater fast fracture and rupture strength than Fiber FP. The time exponents for stress-rupture of these fibers were found to decrease from approximately 13 at 900 C to below 3 near 1050 C, suggesting a transition from slow crack growth to creep rupture as the controlling fracture mechanism. For both fiber types, an effective activation energy of 690 kJ/mol was measured for rupture. This allowed stress-rupture predictions to be made for extended times at use temperatures below 1000 C.

  18. Interfacial Charge Transfer Anisotropy in Polycrystalline Lead Iodide Perovskite Films.

    PubMed

    Yin, Jun; Cortecchia, Daniele; Krishna, Anurag; Chen, Shi; Mathews, Nripan; Grimsdale, Andrew C; Soci, Cesare

    2015-04-16

    Solar cells based on organic-inorganic lead iodide perovskite (CH3NH3PbI3) exhibit remarkably high power conversion efficiency (PCE). One of the key issues in solution-processed films is that often the polycrystalline domain orientation is not well-defined, which makes it difficult to predict energy alignment and charge transfer efficiency. Here we combine ab initio calculations and photoelectron spectroscopy to unravel the electronic structure and charge redistribution at the interface between different surfaces of CH3NH3PbI3 and typical organic hole acceptor Spiro-OMeTAD and electron acceptor PCBM. We find that both hole and electron interfacial transfer depend strongly on the CH3NH3PbI3 surface orientation: while the (001) and (110) surfaces tend to favor hole injection to Spiro-OMeTAD, the (100) surface facilitates electron transfer to PCBM due to surface delocalized charges and hole/electron accumulation at the CH3NH3PbI3/organic interfaces. Molecular dynamic simulations indicate that this is due to strong orbital interactions under thermal fluctuations at room temperature, suggesting the possibility to further improve charge separation and extraction in perovskite-based solar cells by controlling perovskite film crystallization and surface orientation.

  19. Intergranular stress distributions in polycrystalline aggregates of irradiated stainless steel

    NASA Astrophysics Data System (ADS)

    Hure, J.; El Shawish, S.; Cizelj, L.; Tanguy, B.

    2016-08-01

    In order to predict InterGranular Stress Corrosion Cracking (IGSCC) of post-irradiated austenitic stainless steel in Light Water Reactor (LWR) environment, reliable predictions of intergranular stresses are required. Finite elements simulations have been performed on realistic polycrystalline aggregate with recently proposed physically-based crystal plasticity constitutive equations validated for neutron-irradiated austenitic stainless steel. Intergranular normal stress probability density functions are found with respect to plastic strain and irradiation level, for uniaxial loading conditions. In addition, plastic slip activity jumps at grain boundaries are also presented. Intergranular normal stress distributions describe, from a statistical point of view, the potential increase of intergranular stress with respect to the macroscopic stress due to grain-grain interactions. The distributions are shown to be well described by a master curve once rescaled by the macroscopic stress, in the range of irradiation level and strain considered in this study. The upper tail of this master curve is shown to be insensitive to free surface effect, which is relevant for IGSCC predictions, and also relatively insensitive to small perturbations in crystallographic texture, but sensitive to grain shapes.

  20. Nanophotoactivity of Porphyrin Functionalized Polycrystalline ZnO Films.

    PubMed

    Rogero, Celia; Pickup, David F; Colchero, Jaime; Azaceta, Eneko; Tena-Zaera, Ramón; Palacios-Lidón, Elisa

    2016-07-01

    Kelvin probe force microscopy in darkness and under illumination is reported to provide nanoscale-resolved surface photovoltage maps of hybrid materials. In particular, nanoscale charge injection and charge recombination mechanisms occurring in ZnO polycrystalline surfaces functionalized with Protoporphyrin IX (H2PPIX) are analyzed. Local surface potential and surface photovoltage maps not only reveal that upon molecular adsorption the bare ZnO work function increases, but also they allow study of its local dependence. Nanometer-sized regions not correlated with apparent topographic features were identified, presenting values significantly different from the average work function. Depending on the region, the response to the light excitation is different, distinguishing two relaxation processes, one faster than the other. This behavior can be explained in terms of electrons trapped closed to the molecule-semiconductor interface or electrons pushed into the ZnO bulk, respectively. Moreover, the origin of these differences is correlated with the H2PPIX-ZnO bonding and molecules configuration and aggregation. The chenodeoxycholic acid (CDCA) coadsorption leads to a more homogeneous surface potential distribution, confirming the antiaggregate effect of this additive, while the surface photovoltage is mostly dominated by the slow relaxation component. This work reveals the complexity of real device architectures with ill-defined surfaces even in a relatively simple system with only one type of dye molecule and hightlights the importance of nanoscale characterization with appropriate tools. PMID:27303943

  1. Creep behavior for advanced polycrystalline SiC fibers

    SciTech Connect

    Youngblood, G.E.; Jones, R.H.; Kohyama, Akira

    1997-08-01

    A bend stress relaxation (BSR) test is planned to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Baseline 1 hr and 100 hr BSR thermal creep {open_quotes}m{close_quotes} curves have been obtained for five selected advanced SiC fiber types and for standard Nicalon CG fiber. The transition temperature, that temperature where the S-shaped m-curve has a value 0.5, is a measure of fiber creep resistance. In order of decreasing thermal creep resistance, with the 100 hr BSR transition temperature given in parenthesis, the fibers ranked: Sylramic (1261{degrees}C), Nicalon S (1256{degrees}C), annealed Hi Nicalon (1215{degrees}C), Hi Nicalon (1078{degrees}C), Nicalon CG (1003{degrees}C) and Tyranno E (932{degrees}C). The thermal creep for Sylramic, Nicalon S, Hi Nicalon and Nicalon CG fibers in a 5000 hr irradiation creep BSR test is projected from the temperature dependence of the m-curves determined during 1 and 100 hr BSR control tests.

  2. Polycrystalline-Diamond MEMS Biosensors Including Neural Microelectrode-Arrays

    PubMed Central

    Varney, Michael W.; Aslam, Dean M.; Janoudi, Abed; Chan, Ho-Yin; Wang, Donna H.

    2011-01-01

    Diamond is a material of interest due to its unique combination of properties, including its chemical inertness and biocompatibility. Polycrystalline diamond (poly-C) has been used in experimental biosensors that utilize electrochemical methods and antigen-antibody binding for the detection of biological molecules. Boron-doped poly-C electrodes have been found to be very advantageous for electrochemical applications due to their large potential window, low background current and noise, and low detection limits (as low as 500 fM). The biocompatibility of poly-C is found to be comparable, or superior to, other materials commonly used for implants, such as titanium and 316 stainless steel. We have developed a diamond-based, neural microelectrode-array (MEA), due to the desirability of poly-C as a biosensor. These diamond probes have been used for in vivo electrical recording and in vitro electrochemical detection. Poly-C electrodes have been used for electrical recording of neural activity. In vitro studies indicate that the diamond probe can detect norepinephrine at a 5 nM level. We propose a combination of diamond micro-machining and surface functionalization for manufacturing diamond pathogen-microsensors. PMID:25586924

  3. Ternary alloying effects in polycrystalline {beta}-NiAl

    SciTech Connect

    Cotton, J.D.; Noebe, R.D.; Kaufman, M.J.

    1993-05-01

    Purpose of this paper is to summarize alloying research to date in polycrystalline NiAl and its impact on microstructure and ambient temperature properties. It is divided into the following sections: phase equilibria, solid solution effects and precipitation effects. Alloys that contain a high volume fraction of second phase (e.g. pseudobinary eutectic compositions) are not considered. Rather, the effects of dilute to moderate ternary alloying additions on the structure and properties of {beta}-NiAl are reviewed. It is already well established that stoichiometry is paramount in controlling mechanical properties of the binary compound. Since the addition of a third element is equally important, ternary phase equilibria are reviewed first. Solid solution strengthening is probably the least well understood particularly with respect to the nature of point defects and their contribution to strength. Characterization of these defects and their role in mechanical properties may well hold the key to future development of NiAl-based materials. With regard to second phases, there is limited evidence that the classical precipitation hardening mechanisms for metals are also applicable to NiAl.

  4. Memristive Phenomena in Polycrystalline Single Layer MoS2

    NASA Astrophysics Data System (ADS)

    Sangwan, Vinod; Jariwala, Deep; Kim, In-Soo; Chen, Kan-Sheng; Marks, Tobin; Lauhon, Lincoln; Hersam, Mark; Hersam Laboratory Team

    Recently, a new class of layered two-dimensional semiconductors has shown promise for various electronic applications. In particular, single layer transition metal dichalcogenides (e.g. MoS2) present a host of attractive features such as high electrical conductivity, tunable band-gap, and strong light-matter interaction. However, available growth methods produce large-area polycrystalline films with grain-boundaries and point defects that can be detrimental in conventional electronic devices. In contrast, we have developed unconventional device structures that exploit these defects for useful electronic functions. In particular, we observe grain-boundary mediated memristive phenomena in single layer MoS2 transistors. Memristor current-voltage characteristics depend strongly on the topology of grain-boundaries in MoS2. A grain boundary directly connecting metal electrodes produces thermally assisted switching with dynamic negative differential resistance, whereas a grain boundary bisecting the channel shows non-filamentary soft-switching. In addition, devices with intersecting grain boundaries in the channel show bipolar resistive switching with high on/off ratios up to ~103. Furthermore, the gate electrode in the field-effect geometry can be used to control the absolute resistance of the on and off states. Complementary electrostatic force microscopy, photoluminescence, and Raman microscopy reveal the role of sulfur vacancies in the switching mechanism.

  5. Memristive Phenomena in Polycrystalline Single Layer MoS2

    NASA Astrophysics Data System (ADS)

    Sangwan, Vinod; Jariwala, Deep; Kim, In-Soo; Chen, Kan-Sheng; Marks, Tobin; Lauhon, Lincoln; Hersam, Mark; Hersam Laboratory Team

    Recently, a new class of layered two-dimensional semiconductors has shown promise for various electronic applications. In particular, ultrathin transition metal dichalcogenides (e.g. MoS2) present a host of attractive features such as high carrier mobility and tunable band-gap. However, available growth methods produce polycrystalline films with grain-boundaries and point defects that can be detrimental in conventional electronic devices. In contrast, we have developed unconventional device structures that exploit these defects for useful electronic functions. In particular, we observe grain-boundary mediated memristive phenomena in single layer MoS2 transistors. Memristor current-voltage characteristics depend strongly on the topology of grain-boundaries in MoS2. A grain boundary directly connecting metal electrodes produces thermally assisted switching with dynamic negative differential resistance, whereas a grain boundary bisecting the channel shows non-filamentary soft-switching. In addition, devices with intersecting grain boundaries in the channel show bipolar resistive switching with high on/off ratios up to ~103. Furthermore, the gate electrode in the field-effect geometry can be used to control the absolute resistance of the on and off states. Correlated electrostatic force microscopy, photoluminescence, and Raman microscopy reveal the role of sulfur vacancies in the switching mechanism. This abstract is replacing MAR16-2015-004166 that had exceeded the character limit.

  6. Platinum-induced structural collapse in layered oxide polycrystalline films

    SciTech Connect

    Wang, Jianlin; Liu, Changhui; Huang, Haoliang; Fu, Zhengping; Peng, Ranran E-mail: yllu@ustc.edu.cn; Zhai, Xiaofang; Lu, Yalin E-mail: yllu@ustc.edu.cn

    2015-03-30

    Effect of a platinum bottom electrode on the SrBi{sub 5}Fe{sub 1−x}Co{sub x}Ti{sub 4}O{sub 18} layered oxide polycrystalline films was systematically studied. The doped cobalt ions react with the platinum to form a secondary phase of PtCoO{sub 2}, which has a typical Delafossite structure with a weak antiferromagnetism and an exceptionally high in-plane electrical conductivity. Formation of PtCoO{sub 2} at the interface partially consumes the cobalt dopant and leads to the structural collapsing from 5 to 4 layers, which was confirmed by X-ray diffraction and high resolution transmission electron microscopy measurements. Considering the weak magnetic contribution from PtCoO{sub 2}, the observed ferromagnetism should be intrinsic of the Aurivillius compounds. Ferroelectric properties were also indicated by the piezoresponse force microscopy. In this work, the platinum induced secondary phase at the interface was observed, which has a strong impact on Aurivillius structural configuration and thus the ferromagnetic and ferroelectric properties.

  7. Polycrystalline-Diamond MEMS Biosensors Including Neural Microelectrode-Arrays.

    PubMed

    Varney, Michael W; Aslam, Dean M; Janoudi, Abed; Chan, Ho-Yin; Wang, Donna H

    2011-01-01

    Diamond is a material of interest due to its unique combination of properties, including its chemical inertness and biocompatibility. Polycrystalline diamond (poly-C) has been used in experimental biosensors that utilize electrochemical methods and antigen-antibody binding for the detection of biological molecules. Boron-doped poly-C electrodes have been found to be very advantageous for electrochemical applications due to their large potential window, low background current and noise, and low detection limits (as low as 500 fM). The biocompatibility of poly-C is found to be comparable, or superior to, other materials commonly used for implants, such as titanium and 316 stainless steel. We have developed a diamond-based, neural microelectrode-array (MEA), due to the desirability of poly-C as a biosensor. These diamond probes have been used for in vivo electrical recording and in vitro electrochemical detection. Poly-C electrodes have been used for electrical recording of neural activity. In vitro studies indicate that the diamond probe can detect norepinephrine at a 5 nM level. We propose a combination of diamond micro-machining and surface functionalization for manufacturing diamond pathogen-microsensors. PMID:25586924

  8. Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum

    PubMed Central

    Babenko, Vitaliy; Murdock, Adrian T.; Koós, Antal A.; Britton, Jude; Crossley, Alison; Holdway, Philip; Moffat, Jonathan; Huang, Jian; Alexander-Webber, Jack A.; Nicholas, Robin J.; Grobert, Nicole

    2015-01-01

    Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min−1) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials. PMID:26175062

  9. On failure in polycrystalline and amorphous brittle materials

    NASA Astrophysics Data System (ADS)

    Bourne, Neil

    2009-06-01

    The response of brittle materials to uniaxial compressive shock loading is still not well understood. Describing the physical mechanisms resulting from the more complex triaxial states that result from impact and penetration is thus empirical. The physical interpretation of the yield point of brittle materials in one-dimensional strain (the Hugoniot elastic limit (HEL)), the rate dependence of this threshold, the form of stress histories and the effect of polycrystalline microstructure still remain to be comprehensively explained. However, evidence of failure occurring in glasses and ceramics behind a travelling front that follows a shock front has been accumulated and verified in several laboratories. Such a boundary has been called a failure front. The variations in properties across this front include complete loss of tensile strength, partial loss of shear strength, reduction in acoustic impedance, lowered sound speed and opacity to light. It is the object of this work to collect observations of these phenomena and their relation to failure and the HEL in brittle materials. Further, to relate these uniaxial strain measurements of their failed states to the depth of penetration (DoP) in the widely conducted test. British Crown Copyright MoD/2009.

  10. Polycrystalline CVD diamond pixel array detector for nuclear particles monitoring

    NASA Astrophysics Data System (ADS)

    Pacilli, M.; Allegrini, P.; Girolami, M.; Conte, G.; Spiriti, E.; Ralchenko, V. G.; Komlenok, M. S.; Khomic, A. A.; Konov, V. I.

    2013-02-01

    We report the 90Sr beta response of a polycrystalline diamond pixel detector fabricated using metal-less graphitic ohmic contacts. Laser induced graphitization was used to realize multiple squared conductive contacts with 1mm × 1mm area, 0.2 mm apart, on one detector side while on the other side, for biasing, a 9mm × 9mm large graphite contact was realized. A proximity board was used to wire bonding nine pixels at a time and evaluate the charge collection homogeneity among the 36 detector pixels. Different configurations of biasing were experimented to test the charge collection and noise performance: connecting the pixel at the ground potential of the charge amplifier led to best results and minimum noise pedestal. The expected exponential trend typical of beta particles has been observed. Reversing the bias polarity the pulse height distribution (PHD) does not changes and signal saturation of any pixel was observed around ±200V (0.4 V/μm). Reasonable pixels response uniformity has been evidenced even if smaller pitch 50÷100 μm structures need to be tested.

  11. Surface Analysis of 4-Aminothiophenol Adsorption at Polycrystalline Platinum Electrodes

    NASA Technical Reports Server (NTRS)

    Rosario-Castro, Belinda I.; Fachini, Estevao R.; Contes, Enid J.; Perez-Davis, Marla E.; Cabrera, Carlos R.

    2008-01-01

    Formation of self-assembled monolayer (SAM) of 4-aminothiophenol (4-ATP) on polycrystalline platinum electrodes has been studied by surface analysis and electrochemistry techniques. The 4-ATP monolayer was characterized by cyclic voltammetry (CV), Raman spectroscopy, reflection absorption infrared (RAIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). Cyclic voltammetry (CV) experiments give an idea about the packing quality of the monolayer. RAIR and Raman spectra for 4-ATP modified platinum electrodes showed the characteristic adsorption bands for neat 4-ATP indicating the adsorption of 4-ATP molecules on platinum surface. The adsorption on platinum was also evidenced by the presence of sulfur and nitrogen peaks by XPS survey spectra of the modified platinum electrodes. High resolution XPS studies and RAIR spectrum for platinum electrodes modified with 4-ATP indicate that molecules are sulfur-bonded to the platinum surface. The formation of S-Pt bond suggests that ATP adsorption gives up an amino terminated SAM. Thickness of the monolayer was evaluated via angle-resolved XPS (AR-XPS) analyses. Derivatization of 4-ATP SAM was performed using 16-Br hexadecanoic acid.

  12. Recombination-active defects in silicon ribbon and polycrystalline solar cells

    NASA Technical Reports Server (NTRS)

    Cheng, L. J.

    1984-01-01

    This paper reports results from a study of recombination-active structural defects in silicon ribbon and polycrystalline solar cells using the electron beam induced current (EBIC) technique in a scanning electron microscope. It is demonstrated that low temperature EBIC measurements can reveal a range of defects that are not observable at room temperature, including slip dislocations in silicon dendritic web ribbons as well as decorated twin boundaries and dislocation complexes in cast polycrystalline silicon solar cell materials.

  13. Method for production of free-standing polycrystalline boron phosphide film

    DOEpatents

    Baughman, Richard J.; Ginley, David S.

    1985-01-01

    A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.

  14. Free-standing polycrystalline boron phosphide film and method for production thereof

    DOEpatents

    Baughman, R.J.; Ginley, D.S.

    1982-09-09

    A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.

  15. Polarization-phase images of liquor polycrystalline films in determining time of death.

    PubMed

    Garazdyuk, M S; Bachinskyi, V T; Vanchulyak, O Ya; Ushenko, A G; Dubolazov, O V; Gorsky, M P

    2016-04-20

    An optical model for generalized optical anisotropy of polycrystalline networks of albumin and globulin liquor of the human brain has been suggested. The polarization-phase method for spatial and frequency differentiation of linear and circular birefringence coordinate distributions has been analytically substantiated. A set of criteria documenting the dynamics of polarization-phase images of liquor polycrystalline films has been identified in determining time of death. PMID:27140134

  16. Understanding of Defect Physics in Polycrystalline Photovoltaic Materials: Preprint

    SciTech Connect

    Yan, Y.

    2011-07-01

    The performance of thin-film solar cells is influenced by the quality of interfaces and formation of defects such as point defects, stacking faults, twins, dislocations, and grain boundaries. It is important to understand the defect physics so that appropriate methods may be developed to suppress the formation of harmful defects. Here, we review our understanding of defect physics in thin-film photovoltaic (PV) materials such as Si, CdTe, Cu(In,Ga)Se2 (CIGS), Cu2ZnSnSe2 (CZTSe), and Cu2ZnSnS2 (CZTS) using the combination of nanoscale electron microscopy characterization and density-functional theory (DFT). Although these thin-film PV materials share the same basic structural feature - diamond structure based - the defect physics in them could be very different. Some defects, such as stacking faults and special twins, have similar electronic properties in these thin-film materials. However, some other defects, such as grain boundaries and interfaces, have very different electronic properties in these materials. For example, grain boundaries produce harmful deep levels in Si and CdTe, but they do not produce significant deep levels in CIGS, CZTSe, and CZTS. These explain why passivation is critical for Si and CdTe solar cells, but is less important in CIS and CZTS solar cells. We further provide understanding of the effects of interfaces on the performance of solar cells made of these PV materials.

  17. Understanding of Defect Physics in Polycrystalline Photovoltaic Materials

    SciTech Connect

    Yan, Y.

    2011-01-01

    The performance of thin-film solar cells is influenced by the quality of interfaces and formation of defects such as point defects, stacking faults, twins, dislocations, and grain boundaries. It is important to understand the defect physics so that appropriate methods may be developed to suppress the formation of harmful defects. Here, we review our understanding of defect physics in thin-film photovoltaic (PV) materials such as Si, CdTe, Cu(In, Ga)Se{sub 2} (CIGS), Cu{sub 2}ZnSnSe{sub 2} (CZTSe), and Cu{sub 2}ZnSnS{sub 2} (CZTS) using the combination of nanoscale electron microscopy characterization and density-functional theory (DFT). Although these thin-film PV materials share the same basic structural feature - diamond structure based - the defect physics in them could be very different. Some defects, such as stacking faults and special twins, have similar electronic properties in these thin-film materials. However, some other defects, such as grain boundaries and interfaces, have very different electronic properties in these materials. For example, grain boundaries produce harmful deep levels in Si and CdTe, but they do not produce significant deep levels in CIGS, CZTSe, and CZTS. These explain why passivation is critical for Si and CdTe solar cells, but is less important in CIS and CZTS solar cells. We further provide understanding of the effects of interfaces on the performance of solar cells made of these PV materials.

  18. Thin Film?

    NASA Astrophysics Data System (ADS)

    Kariper, İ. Afşin

    2014-09-01

    This study focuses on the critical surface tension of lead sulfite (PbSO3) crystalline thin film produced with chemical bath deposition on substrates (commercial glass).The PbSO3 thin films were deposited at room temperature at different deposition times. The structural properties of the films were defined and examined according to X-ray diffraction (XRD) and the XRD results such as dislocation density, average grain size, and no. of crystallites per unit area. Atomic force microscopy was used to measure the film thickness and the surface properties. The critical surface tension of the PbSO3 thin films was measured with an optical tensiometer instrument and calculated using the Zisman method. The results indicated that the critical surface tension of films changed in accordance with the average grain size and film thickness. The film thickness increased with deposition time and was inversely correlated with surface tension. The average grain size increased according to deposition time and was inversely correlated with surface tension.

  19. Growth and characterization of organic ferroelectric croconic acid thin films

    NASA Astrophysics Data System (ADS)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Enders, Axel; Gruverman, Alexei; Xu, Xiaoshan

    Using vapor phase evaporation, we have studied the growth of the croconic acid (CCA) thin films, at various conditions such as temperature, thickness, growth speed, and substrates. The morphology of thin film was measured by atomic force microscopy (AFM); the ferroelectric property was confirmed by piezoresponse force microscopy (PFM). A critical thickness of 40 nm and optimal temperature of -30 celsius were found for continuous films, while the substrate and growth speed are found to play a minimal role. According to the reflection high energy electron diffraction (RHEED), the CCA films are polycrystalline. For a 40 nm continuous film, the roughness is about 3 nm, while the coercive voltage for the ferroelectric domain switching is approximately 7V. This is the first molecule ferroelectric thin film. The successful growth of continuous CCA films enhances the applications potential of CCA, which is a molecular crystal of ferroelectricity. Supported by NSF through UNL MRSEC (DMR-1420645).

  20. Single Source Precursors for Thin Film Solar Cells

    NASA Technical Reports Server (NTRS)

    Banger, Kulbinder K.; Hollingsworth, Jennifer A.; Harris, Jerry D.; Cowen, Jonathan; Buhro, William E.; Hepp, Aloysius F.

    2002-01-01

    The development of thin film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power, (W/kg). The use of a polycrystalline chalcopyrite absorber layer for thin film solar cells is considered as the next generation photovoltaic devices. At NASA GRC we have focused on the development of new single source precursors (SSP) and their utility to deposit the chalcopyrite semi-conducting layer (CIS) onto flexible substrates for solar cell fabrication. The syntheses and thermal modulation of SSPs via molecular engineering is described. Thin-film fabrication studies demonstrate the SSPs can be used in a spray CVD (chemical vapor deposition) process, for depositing CIS at reduced temperatures, which display good electrical properties, suitable for PV (photovoltaic) devices.

  1. Fundamental studies of the inter-relationship between grain boundary properties and the macroscopic properties of polycrystalline materials. Final report, October 1991--December 1996

    SciTech Connect

    Clarke, D.R.

    1997-04-01

    The research performed under this grant has been principally devoted to understanding and quantifying the relationship between the macroscopic electrical transport properties of ZnO based materials and the properties of their grain boundaries. Two forms of polycrystalline ZnO have been extensively investigated, polycrystalline thin films, such as are used as optically transmitting, conducting electrodes and as piezoelectric films, and polycrystalline bulk forms, such as are widely used as surge arrestors. The former are essentially two-dimensional and the latter three-dimensional. The research has included both simulation and experimental studies. The simulation studies have been primarily addressing how the macroscopic properties of bulk ZnO ceramics are determined by the electrical and crystallographic properties of their grain boundaries. The behavior of varistors has been the focus since the highly nonlinear electrical characteristics provide an opportunity to test the models in much greater detail than is possible if the characteristics were simply ohmic. Furthermore, there is a continuing desire to improve varistor characteristics, such as the sharpness of the switching voltage and the degree of nonlinearity, so the effect of grain boundary variations on these parameters have been specifically addressed and found to quantitatively depend on the variation in both grain size and grain boundary barrier height. New methods of quantifying the effect of microstructural variations on the I-V characteristics have been introduced. The simulations have included both electrical network methods and effective medium methods. During the course of the research, the studies were extended to describe electrical breakdown, specifically on how microstructural variations lead to current localization which in turn leads to a form of electrical discharge failure, a common form of failure of varistors under electrical loading.

  2. Microstructure of polycrystalline PBTTT films: domain mapping and structure formation.

    PubMed

    Schuettfort, Torben; Watts, Benjamin; Thomsen, Lars; Lee, Mijung; Sirringhaus, Henning; McNeill, Christopher R

    2012-02-28

    We utilize near-edge X-ray absorption fine structure (NEXAFS) spectroscopy and scanning transmission X-ray microscopy (STXM) to study the microstructure and domain structure of polycrystalline films of the semiconducting polymer poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). Total electron yield NEXAFS spectroscopy is used to examine the surface structure of the first 1-2 molecular layers, while bulk-sensitive STXM is used to produce maps of domain orientation and order sampled through the entire film thickness. We study different phases of PBTTT including as-cast, terraced and nanoribbon morphologies produced via spin-coating as well as aligned films of as-cast and nanoribbon morphologies produced by zone-casting. For the terraced morphology, domains are observed that are larger than the size of the terraced surface features, and the calculated degree of order is reduced compared to the nanoribbon morphology. For zone-cast films, we find that, although little optical anisotropy is observed in the bulk of as-cast films, a high degree of surface structural anisotropy is observed with NEXAFS spectroscopy, similar to what is observed in annealed nanoribbon films. This observation indicates that the aligned surface structure in unannealed zone-cast films templates the bulk ordering of the aligned nanoribbon phase. STXM domain mapping of aligned nanoribbon films reveals elongated, micrometer-wide domains with each domain misoriented with respect to its neighbor by up to 45°, but with broad domain boundaries. Within each nanoribbon domain, a high degree of X-ray dichroism is observed, indicating correlated ordering throughout the bulk of the film.

  3. The low field microwave effective linewidth in polycrystalline ferrites

    NASA Astrophysics Data System (ADS)

    Mo, Nan; Green, Jerome J.; Krivosik, Pavol; Patton, Carl E.

    2007-01-01

    High precision measurements on the low and high field effective linewidth ΔHeff at 10GHz have been made on ultradense (UD) and conventionally sintered (CS) polycrystalline yttrium iron garnet (YIG) materials. The high field data confirm previous results on the role of two magnon scattering to low wave number (k ) electromagnetic Larmor branch spin waves that lie below the light line. The low field data reveal two important contributions to the effective linewidth. For a field regime from the low k edge of the usual dipole exchange spin wave band down to the point in field (H=HX) where above-the-light-line electromagnetic branch Larmor (EML-HI) spin waves appear, ΔHeff is connected with scattering to relatively high k dipole exchange Larmor (DEL) spin waves. The coupling to these modes comes from grain boundaries in the YIG materials. A grain boundary scattering theory gives reasonable agreement with the data. While the high field effective linewidth due to pseudo in-manifold scattering is larger for the CS samples compared to that for the UD samples, the high k DEL scattering is larger for the UD samples compared to that for the CS samples. This is due to the dominant role of the grain boundaries in the low field ΔHeff. For fields below HX, additional scattering appears for the EML-HI modes. The abrupt appearance of an additional ΔHeff component for H

  4. Premelting and the Water Budget in Polycrystalline Ice

    NASA Astrophysics Data System (ADS)

    Thomson, E. S.; Wilen, L. A.; Wettlaufer, J. S.

    2008-12-01

    A number of mechanisms, generally classified as premelting are responsible for the presence of liquid water at ice interfaces at temperatures well below 0°C . Premelting includes the familiar colligative effects of ions and other impurities, which lower the chemical potential of the liquid solvent, and the Gibbs-Thomson effect which describes the lowering of the melting point for a solid convex into its melt. Such phenomena are known to influence the amount of water in natural and laboratory polycrystalline ice and to control the thermal, chemical, and material transport properties. Thus, liquid water within the solid ice matrix influences the behavior of terrestrial ice over a wide range of length and time scales, from the macroscopic behavior of temperate glacier ice to the distribution of climate proxies within polar ice sheets. Using optical microscopy observations of ice near its melting temperature, rough bounds have been put on the length scales and dihedral angle associated with the liquid network in ice. However, these techniques cannot resolve whether the boundary between any two grains is wet or dry. For this, a more refined light scattering method has been developed. This method and the results are described both in the context of the basic physics and the application to the geophysical setting. The importance of this approach is broad, with implications ranging from the understanding of the role of intermolecular forces in the wetting properties of the ice/ice interface to constructing a budget for the total amount of water in an ice sheet. Additionally, basic applications of grain boundary melting are important in fields from metallurgy and materials science to mineral physics and geoengineering.

  5. Intergranular strain evolution near fatigue crack tips in polycrystalline metals

    NASA Astrophysics Data System (ADS)

    Zheng, L. L.; Gao, Y. F.; Lee, S. Y.; Barabash, R. I.; Lee, J. H.; Liaw, P. K.

    2011-11-01

    The deformation field near a steady fatigue crack includes a plastic zone in front of the crack tip and a plastic wake behind it, and the magnitude, distribution, and history of the residual strain along the crack path depend on the stress multiaxiality, material properties, and history of stress intensity factor and crack growth rate. An in situ, full-field, non-destructive measurement of lattice strain (which relies on the intergranular interactions of the inhomogeneous deformation fields in neighboring grains) by neutron diffraction techniques has been performed for the fatigue test of a Ni-based superalloy compact tension specimen. These microscopic grain level measurements provided unprecedented information on the fatigue growth mechanisms. A two-scale model is developed to predict the lattice strain evolution near fatigue crack tips in polycrystalline materials. An irreversible, hysteretic cohesive interface model is adopted to simulate a steady fatigue crack, which allows us to generate the stress/strain distribution and history near the fatigue crack tip. The continuum deformation history is used as inputs for the micromechanical analysis of lattice strain evolution using the slip-based crystal plasticity model, thus making a mechanistic connection between macro- and micro-strains. Predictions from perfect grain-boundary simulations exhibit the same lattice strain distributions as in neutron diffraction measurements, except for discrepancies near the crack tip within about one-tenth of the plastic zone size. By considering the intergranular damage, which leads to vanishing intergranular strains as damage proceeds, we find a significantly improved agreement between predicted and measured lattice strains inside the fatigue process zone. Consequently, the intergranular damage near fatigue crack tip is concluded to be responsible for fatigue crack growth.

  6. Intergranular Strain Evolution near Fatigue Crack Tips in Polycrystalline Metals

    SciTech Connect

    Zheng, Lili; Gao, Yanfei; Lee, Sooyeol; Barabash, Rozaliya; Lee, Jinhaeng; Liaw, Peter K

    2011-01-01

    The deformation field near a steady fatigue crack includes a plastic zone in front of the crack tip and a plastic wake behind it, and the magnitude, distribution, and history of the residual strain along the crack path depend on the stress multiaxiality, material properties, and history of stress intensity factor and crack growth rate. An in situ, full-field, non-destructive measurement of lattice strain (which relies on the intergranular interactions of the inhomogeneous deformation fields in neighboring grains) by neutron diffraction techniques has been performed for the fatigue test of a Ni-based superalloy compact tension specimen. These microscopic grain level measurements provided unprecedented information on the fatigue growth mechanisms. A two-scale model is developed to predict the lattice strain evolution near fatigue crack tips in polycrystalline materials. An irreversible, hysteretic cohesive interface model is adopted to simulate a steady fatigue crack, which allows us to generate the stress/strain distribution and history near the fatigue crack tip. The continuum deformation history is used as inputs for the micromechanical analysis of lattice strain evolution using the slip-based crystal plasticity model, thus making a mechanistic connection between macro- and micro-strains. Predictions from perfect grain-boundary simulations exhibit the same lattice strain distributions as in neutron diffraction measurements, except for discrepancies near the crack tip within about one-tenth of the plastic zone size. By considering the intergranular damage, which leads to vanishing intergranular strains as damage proceeds, we find a significantly improved agreement between predicted and measured lattice strains inside the fatigue process zone. Consequently, the intergranular damage near fatigue crack tip is concluded to be responsible for fatigue crack growth.

  7. Mechanical wafer engineering for semitransparent polycrystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Willeke, G.; Fath, P.

    1994-03-01

    A concept for the realization of semitransparent bifacially active highly efficient and light weight crystalline silicon solar cells is presented. The concept is based on the preparation of perpendicular V-grooves in silicon blanks by mechanical abrasion using a dicing saw and beveled blades. Holes of variable diameter are formed automatically in the processing step, which provide a connection between the passivated phosphorus doped front and back side emitters. A maximum bulk-emitter distance of ˜30 μm has been realized in 200 μm thick structures which should result in highly efficient solar cell devices even in small grain low quality polycrystalline material. The partial transparency of the presented solar cell structure opens the way for new applications (crystalline Si photovoltaic windows, etc.). The feasibility of the mechanical grooving process has been demonstrated on Wacker SILSO cast silicon. Double-side V-grooved structures (distance between grooves 90 and 140 μm, bevel angle 35°) with hole diameters in the range 10-70 μm, corresponding to a transmittance of up to 30% in the visible, have been prepared with excellent uniformity and mechanical stability over a large area (5×5 cm2). An average total reflectance in the range 500-1000 nm of Rav=0.9% has been measured on a structure with a geometrical hole fraction of 1.7% after growth of a 1170 Å thick layer of thermal oxide. This SILSO structure had an effective silicon thickness of 120 μm, whereas the absorptance spectrum near the band edge was similar to a 5.5 mm thick nongrooved silicon wafer, indicating the excellent light trapping obtained.

  8. Low- cycle fatigue behavior of polycrystalline nial at 1000 k

    NASA Astrophysics Data System (ADS)

    Lerch, B. A.; Noebe, R. D.

    1994-02-01

    The low-cycle fatigue behavior of polycrystalline NiAl was determined at 1000 K, a temperature above the monotonic brittle-to-ductile transition temperature (BDTT). Fully reversed, plastic strain-controlled fatigue tests were conducted on B2 intermetallic samples prepared by two fab-rication techniques: hot isostatic pressing (HIP) of prealloyed powders and extrusion of vacuum induction-melted [cast plus extruded (C+E)] castings. At 1000 K, in an air environment both the hot-isostatically pressed (“hipped”) and C + E samples cyclically softened throughout most of their fatigue lives, though the absolute change in stress was no greater than about 35 MPa. At this temperature, samples were insensitive to processing defects, which were a source of failure initiation in room-temperature tests. The processing method had a small effect on fatigue life; the lives of the hipped samples were about a factor of 3 shorter than the fatigue lives of the C+E NiAl. The C+E material also underwent dynamic grain growth during testing, while the hipped NiAl maintained a constant grain size. Stable fatigue-crack growth in both materials was intergranular in nature, while final fracture by tensile overload occurred by transgranular cleavage. However, at plastic strain ranges below 0.3 pct, the fatigue lives of the hipped NiAl were controlled by intergranular cavitation and creep processes such that the fatigue lives were shorter than anticipated. Finally, hipped samples tested in vacuum had a factor of 3 longer life than specimens tested in air. A comparison of NiAl to typical superalloys (which it may replace) showed that NiAl exhibited a superior fatigue life on a plastic strain basis but was inferior to most superalloys on a stress basis.

  9. Heterogeneous microstructures and macroscopic creep behavior of polycrystalline ice (Invited)

    NASA Astrophysics Data System (ADS)

    Lebensohn, R.

    2009-12-01

    We present results of two complementary formulations, a full-field approach based on fast Fourier transforms (FFT) [1] and a mean-field approach based on rigorous nonlinear homogenization [2] to study the influence of different microstructural features on the macroscopic behavior of polycrystalline ice. The FFT-based model is used for the prediction of local fields in columnar ice polycrystals deforming in compression by dislocation creep [3]. The predicted intragranular mechanical fields are in qualitative good agreement with experimental observations, in particular those involving the formation of shear and kink bands. These localization bands are associated with the large internal stresses that develop during creep in such anisotropic material, and their location, intensity, morphology and extension are found to depend strongly on the crystallographic orientation of the grains and on their interaction with neighbor crystals. In turn, this numerically-intensive full-field formulation is used to validate the predictions of different, more efficient homogenization approaches. We show that a recent second-order formulation, which explicitly uses information on average intragranular field fluctuations, implemented within the widely used ViscoPlastic Self-Consistent (VPSC) code [4], yields the most accurate results. References: [1] H. Moulinec and P. Suquet, Comput. Methods Appl. Mech. Eng. 157, 69 (1998). [2] P. Ponte Castañeda, J. Mech. Phys. Solids 50, 737 (2002). [3] R.A. Lebensohn, M. Montagnat, P. Mansuy et al. Acta Mater. 57, 1405, (2009). [4] R.A. Lebensohn, C.N. Tomé and P. Ponte Castañeda. Phil. Mag. 87, 4287 (2007).

  10. Highly Doped Polycrystalline Silicon Microelectrodes Reduce Noise in Neuronal Recordings In Vivo

    PubMed Central

    Saha, Rajarshi; Jackson, Nathan; Patel, Chetan; Muthuswamy, Jit

    2013-01-01

    The aims of this study are to 1) experimentally validate for the first time the nonlinear current-potential characteristics of bulk doped polycrystalline silicon in the small amplitude voltage regimes (0–200 μV) and 2) test if noise amplitudes (0–15 μV) from single neuronal electrical recordings get selectively attenuated in doped polycrystalline silicon microelectrodes due to the above property. In highly doped polycrystalline silicon, bulk resistances of several hundred kilo-ohms were experimentally measured for voltages typical of noise amplitudes and 9–10 kΩ for voltages typical of neural signal amplitudes (>150–200 μV). Acute multiunit measurements and noise measurements were made in n = 6 and n = 8 anesthetized adult rats, respectively, using polycrystalline silicon and tungsten microelectrodes. There was no significant difference in the peak-to-peak amplitudes of action potentials recorded from either microelectrode (p > 0.10). However, noise power in the recordings from tungsten microelectrodes (26.36 ± 10.13 pW) was significantly higher (p < 0.001) than the corresponding value in polycrystalline silicon microelectrodes (7.49 ± 2.66 pW). We conclude that polycrystalline silicon microelectrodes result in selective attenuation of noise power in electrical recordings compared to tungsten microelectrodes. This reduction in noise compared to tungsten microelectrodes is likely due to the exponentially higher bulk resistances offered by highly doped bulk polycrystalline silicon in the range of voltages corresponding to noise in multiunit measurements. PMID:20667815

  11. Yb-doped SnTe semimetal thin films deposited by thermal evaporation: Structural, electrical, and thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Hmood, A.; Kadhim, A.; Hassam, H. A.

    2014-12-01

    Sn monochalcogenide and Yb-doped Sn1-xYbxTe (0.0 ⩾ x ⩽ 0.1) semimetals, which are known for their usefulness as efficient thermoelectric (TE) materials, were prepared by solid-state microwave technique. Polycrystalline thin films of Sn1-xYbxTe were deposited onto clean glass substrates by using vacuum evaporation technique at 10-6 bar. The structures of the polycrystalline thin films were examined by X-ray diffraction patterns. A rock salt structure was observed. Grain size increased with increasing Yb content but not according to a sequence. The morphology of the nanosheet structures for these thin films was determined by field emission scanning electron microscopy. TE properties were measured at a temperature range of 298-523 K. The carrier concentrations of the films were determined by Hall effect measurements at 300 K.

  12. Structural investigations of sputter deposited thin films: reflection mode EXAFS, specular and non specular X-ray scattering

    NASA Astrophysics Data System (ADS)

    Lützenkirchen-Hecht, Dirk; Frahm, Ronald

    2000-06-01

    The extended X-ray absorption fine structure technique (EXAFS) in the reflection mode was used for the ex situ investigation of sputter deposited thin films on float glass substrates. We show that a detailed analysis of the reflectivity fine structure enables the extraction of short-range order structural information such as bond distances, coordination numbers and Debye-Waller factors. The surface roughness and the density of the thin films were determined from specular and non-specular X-ray scattering experiments. Polycrystalline Ag and Au films prepared by DC-sputtering in Ar atmospheres were investigated to show the potential of the technique. Both systems reveal a polycrystalline short-range order structure similar to that of the respective bulk materials. In contrast, amorphous structures with significantly reduced densities were found for Ta 2O 5 thin films prepared by reactive sputtering in pure O 2-atmospheres.

  13. Stacking faults and lamellar twins with intrinsic point defects in poly-crystalline CdTe analyzed by density functional theory

    NASA Astrophysics Data System (ADS)

    Buurma, Christopher; Chan, Maria; Pauluaskas, Tadas; Klie, Robert; Sivananthan, Sivalingam; DOE Bridge Project Collaboration

    2014-03-01

    Polycrystalline CdTe is a prominent photovoltaic material with proven industry success. To develop the next generation of thin film CdTe solar cells, higher open-circuit voltages and longer minority carrier lifetimes must be achieved. Playing a major role in doping, defect migration, recombination, and current transport are grain boundaries and other extended defects within grains of poly-crystalline CdTe. Commonly observed with STEM in CdTe are twins and stacking faults that extend throughout the entire grain. These twins can appear as lamellar repeating twins, or as single column stacking faults occurring in repetition near that of a Wurtzite structure. In this talk, we will use first principles density functional theory to investigate the thermodynamics and electronic structures such structures observed in STEM. The interaction energetics between adjacent twins and sets of twins are investigated. We will also investigate the likelihood of formation of neutral and charged native point defects in and near these extended defect structures. Binding energies of multiple point defects near such structures are also revealed. Implications towards PV efficiencies are discussed.

  14. Growth of n-type polycrystalline pyrite (FeS 2) films by metalorganic chemical vapour deposition and their electrical characterization

    NASA Astrophysics Data System (ADS)

    Oertel, J.; Ellmer, K.; Bohne, W.; Röhrich, J.; Tributsch, H.

    1999-03-01

    The compound semiconductor pyrite (FeS 2) has attracted attention as a possible absorber material for thin film solar cells. In this article it is shown for the first time that polycrystalline pyrite films which normally show p-type conductivity, can in situ be doped n-type by using cobalt as a dopant above a concentration of 0.3 at%. The chemical cobalt concentration - determined by high energy heavy ion Rutherford backscattering analysis - is proportional to the cobalt-to-iron ratio in the gas phase. The carrier concentrations are very high (>10 20 cm -3) and the Seebeck coefficients are low (<70 μV/K), pointing at degenerated semiconductor properties. The carrier transport in the films can be described by the grain barrier limited transport model described by Seto (1975). From the temperature dependence of the Hall mobility, barrier heights of 7-37 meV have been determined. The trap density in the grain barriers is about 2×10 13 cm -2, a value which is much higher than in polycrystalline silicon or CdS-films.

  15. Preferential polarization and its reversal in polycrystalline BiFeO3/La0.5Sr0.5CoO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Roy Choudhury, Palash; Parui, Jayanta; Chiniwar, Santosh; Krupanidhi, S. B.

    2015-04-01

    Polycrystalline BiFeO3 thin films were grown on La0.5Sr0.5CoO3 buffered Pt (200)/TiO2/SiO2/Si substrates under different oxygen partial pressures (10, 25, 50 and 100 mTorr) by pulsed laser ablation. Piezoresponse Force Microscopy and Piezo-Force Spectroscopy have shown that all the films are ferroelectric in nature with locally switchable domains. It has also revealed a preferential downward domain orientation in as-grown films grown under lower oxygen partial pressure (10 and 25 mTorr) with a reversal of preferential domain orientation as the oxygen partial pressure is increased to 100 mTorr during laser ablation. Such phenomena are atypical of multi-grained polycrystalline ferroelectric films and have been discussed on the basis of defect formation with changing growth conditions. For the 50 mTorr grown film, asymmetric domain stability and retention during write-read studies has been observed which is attributed to grain-size-related defect concentration, affecting pinning centres that inhibit domain wall motion.

  16. Tight comparison of Mg and Y thin film photocathodes obtained by the pulsed laser deposition technique

    NASA Astrophysics Data System (ADS)

    Lorusso, A.; Gontad, F.; Solombrino, L.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-11-01

    In this work Magnesium (Mg) and Yttrium (Y) thin films have been deposited on Copper (Cu) polycrystalline substrates by the pulsed laser ablation technique for photocathode application. Such metallic materials are studied for their interesting photoemission properties and are proposed as a good alternative to the Cu photocathode, which is generally used in radio-frequency guns. Mg and Y films were uniform with no substantial differences in morphology; a polycrystalline structure was found for both of them. Photoemission measurements of such cathodes based on thin films were performed, revealing a quantum efficiency higher than Cu bulk. Photoemission theory according to the three-step model of Spicer is invoked to explain the superior photoemission performance of Mg with respect to Y.

  17. Thin films of gallium arsenide on low-cost substrates. Final technical report, July 5, 1976-December 5, 1978

    SciTech Connect

    Ruth, R.P.; Dapkus, P.D.; Dupuis, R.D.; Johnson, R.E.; Moudy, L.A.; Yang, J.J.; Yingling, R.D.

    1980-03-01

    The MO-CVD technique was applied to the growth of thin films of GaAs and GaAl As on inexpensive polycrystalline or amorphous substrate materials (primarily glasses and metals) for use in fabrication of large-area low-cost photovoltaic device structures. Trimethylgallium, arsine, and trimethylaluminum are mixed in appropriate concentrations at room temperature in the gaseous state and pyrolyzed at the substrate, which is heated in a vertical reactor chamber to temperatures of 700 to 750/sup 0/C, to produce the desired film composition and properties. Studies of the properties of grain boundaries in polycrystalline GaAs films by the use of transport measurements as a function of temperature indicated that the grain boundary regions are depleted of majority carriers by a large density of neutral traps at the grain boundary interface, causing a barrier to majority carrier flow in the material. Schottky-barrier solar cells of approx. 3 percent efficiency (simulated AM0 illumination, no AR coating) were demonstrated on thin-film polycrystalline GaAs n/n/sup +/ structures on Mo sheet, Mo film/glass, and graphite substrates. Substantial enhancement of average grain size in polycrystalline MO-CVD GaAs films on Mo sheet was obtained by the addition of HCl to the growth atmosphere during deposition. Extensive investigation of polycrystalline thin-film p-n junctions indicated that the forward voltage of such devices is apparently limited to 0.5 to 0.6V. A laboratory-type deposition apparatus for the formation of TiO/sub 2/ antireflection (AR) coatings by pyrolysis of titanium isopropoxide was assembled and tested. Detailed analyses were made of the materials and labor costs involved in the laboratory-scale fabrication of MO-CVD thin-film GaAs solar cells. Details are presented. (WHK)

  18. Thin films of mixed metal compounds

    DOEpatents

    Mickelsen, R.A.; Chen, W.S.

    1985-06-11

    Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

  19. Stable nanostructured cathode with polycrystalline Li-deficient Li0.28Co0.29Ni0.30Mn0.20O2 for lithium-ion batteries.

    PubMed

    Wu, Feng; Tan, Guoqiang; Lu, Jun; Chen, Renjie; Li, Li; Amine, Khalil

    2014-03-12

    The lithium-ion battery, a major renewable power source, has been widely applied in portable electronic devices and extended to hybrid electric vehicles and all-electric vehicles. One of the main issues for the transportation application is the need to develop high-performance cathode materials. Here we report a novel nanostructured cathode material based on air-stable polycrystalline Li0.28Co0.29Ni0.30Mn0.20O2 thin film with lithium deficiency for high-energy density lithium-ion batteries. This film is prepared via a method combining radio frequency magnetron sputtering and annealing using a crystalline and stoichiometric LiCo1/3Ni1/3Mn1/3O2 target. This lithium-deficient Li0.28Co0.29Ni0.30Mn0.20O2 thin film has a polycrystalline nanostructure, high tap density, and higher energy and power density compared to the initial stoichiometric LiCo1/3Ni1/3Mn1/3O2. Such a material is a promising cathode candidate for high-energy lithium-ion batteries, especially thin-film batteries.

  20. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1977-01-01

    Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

  1. Growth and Characterization of Bismuth and Antimony Thin Films

    NASA Astrophysics Data System (ADS)

    Martinez, A.; Berrios, A. R.; Collazo, R.; Garcia, J. L.; Ducoudray, G. O.

    1996-03-01

    We have grown thin films of bismuth and antimony using hot wall epitaxy. The polycrystalline films were grown onto (111)-silicon substrates. The chemical integrity of the films was established using Auger electron spectroscopy. The crystallographical properties of the films were assessed using x-ray diffraction techniques. We will report on the results of these characterization efforts, as well as, on the growth apparatus and process. Work supported in part by NSWC-CRADA 93-01 and EPSCoR-NSF Grant EHR-9108775

  2. Growth of ZnO:Al thin films onto different substrates

    SciTech Connect

    Prepelita, Petronela; Medianu, R.; Garoi, F.; Moldovan, A.

    2010-11-01

    In this paper we present some results regarding undoped and doped ZnO thin films deposited on various substrates like glass, silicon and kapton by rf magnetron sputtering. The influence of the amount of aluminum as well as the usage of different substrates on the final photovoltaic properties of the thin films is studied. For this, structural-morphological and optical investigations on the thin films are conducted. It was found that three important factors must be taken into account for adjusting the final desired application intended for the deposited thin films. These factors are: deposition conditions, the nature of both the dopant material and the substrate. A comparison study between undoped and doped case is also realized. Smooth Al doped ZnO thin films with a polycrystalline structure and a lower roughness than undoped ZnO are obtained.

  3. Exciton diffusion lengths of organic semiconductor thin films measured by spectrally resolved photoluminescence quenching

    NASA Astrophysics Data System (ADS)

    Lunt, Richard R.; Giebink, Noel C.; Belak, Anna A.; Benziger, Jay B.; Forrest, Stephen R.

    2009-03-01

    We demonstrate spectrally resolved photoluminescence quenching as a means to determine the exciton diffusion length of several archetype organic semiconductors used in thin film devices. We show that aggregation and crystal orientation influence the anisotropy of the diffusion length for vacuum-deposited polycrystalline films. The measurement of the singlet diffusion lengths is found to be in agreement with diffusion by Förster transfer, whereas triplet diffusion occurs primarily via Dexter transfer.

  4. Nondestructive method and apparatus for imaging grains in curved surfaces of polycrystalline articles

    DOEpatents

    Carpenter, D.A.

    1995-05-23

    A nondestructive method, and associated apparatus, are provided for determining the grain flow of the grains in a convex curved, textured polycrystalline surface. The convex, curved surface of a polycrystalline article is aligned in a horizontal x-ray diffractometer and a monochromatic, converging x-ray beam is directed onto the curved surface of the polycrystalline article so that the converging x-ray beam is diffracted by crystallographic planes of the grains in the polycrystalline article. The diffracted x-ray beam is caused to pass through a set of horizontal, parallel slits to limit the height of the beam and thereafter. The linear intensity of the diffracted x-ray is measured, using a linear position sensitive proportional counter, as a function of position in a direction orthogonal to the counter so as to generate two dimensional data. An image of the grains in the curved surface of the polycrystalline article is provided based on the two-dimensional data. 7 Figs.

  5. Process Research On Polycrystalline Silicon Material (PROPSM). [flat plate solar array project

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1983-01-01

    The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

  6. Robust topological surface transport with weak localization bulk channels in polycrystalline Bi2Te3 films

    NASA Astrophysics Data System (ADS)

    Zhang, H. B.; Yao, J. D.; Shao, J. M.; Yang, G. W.

    2016-03-01

    Bi2Te3 polycrystalline topological insulator films have provided an attractive material platform to investigate topological insulator properties and created new opportunities for novel magneto-electronic device applications. In order to confirm that Bi2Te3 polycrystalline film has a robust topological surface state, and whether such surface Dirac fermions can be protected from localization in transport, we performed a systematic transport measurement and analysis based on a Sn-doped Bi2Te3 polycrystalline film with Hall configuration electrodes. We demonstrated that the electron-electron interaction effect is very strong, which can help realize an insulating ground state. The surface state of the film always exhibits stable weak anti-localization features despite the presence of many structural defects and non-magnetic doping, and the Hall resistance can present a significant nonlinear dependence on magnetic fields. These two characteristics provide significant experimental evidence that the polycrystalline film has a robust topological surface state, and that such surface electrons cannot be localized. Owing to the lack of topological protection, the weak anti-localization transport of bulk electrons cannot be guaranteed, and weak localization behavior may appear in the bulk channels. These results verify that robust topological surface transport in topological insulator polycrystalline films can be accompanied by weak localization bulk channels.

  7. Amorphous and polycrystalline water ices in space environments

    NASA Astrophysics Data System (ADS)

    Andrade, Diana; Pilling, Sergio; Da Silveira, Enio; Barros, Ana

    2016-07-01

    Ices are an important reservoir of more complex molecular species in several space environments, containing information about the composition and formation of these regions. Water ice is the dominant constituent of interstellar ices in most lines of sight and is about 70 % of the composition in comets, being a key molecule in astrochemical models. It is believed that one of the reactive species possibly evaporated from the water ices is the hydronium ion, H_{3}O^{+}, which plays an important role in the oxygen chemistry network. This ion has been detected in the lunar surface of Enceladus and Titan, and toward the Sagittarius B2 molecular Clouds, where H_{2}O and OH were also identified. In this work, the ion desorption due to radiolysis in ices constituted by water at three different temperatures (40, 70 and 125 K) is studied, to investigate the different allotropic water ices. A discussion on the rate of H_{3}O^{+} and water delivered to gas phase, as well as the half-life of water ice grains, inside dense molecular clouds considering a constants cosmic ray flux is given. The ions desorbed from water ice have been mass/charge analyzed by a time-of-flight spectrometer. Among the results, it is seen that in the positive ion spectrum of high density amorphous water ice at 40 K the highest desorption yields (ejected ions/impact) correspond to H^{+}, H_{3}O^{+} and clusters formed by (H_{2}O)_{n}R^{+}, where R^{+} is H_{3}O^{+} and 1 ≤ n ≤ 25. At T = 125 K, the ice is in its low density polycrystalline form and new clusters are present, such as (H_{2}O)_{n}R^{+}, where R^{+} is H_{2}^{+} and H_{3}^{+} (for low n), beyond H_{3}O^{+}. Therefore, it is seen that (H_{2}O)_{n}H_{3}O^{+} series (with n between 1 and 25) is dominant in all cases. The H_{3}O^{+} desorption yield at 40 K is about 5times10^{-3} ions/impact. This value is 4-5 times higher than the one obtained at T > 125 K. This behavior is also seen to all series member and consequently to the sum (Yn).

  8. The latent fingerprint in mass transport of polycrystalline materials

    NASA Astrophysics Data System (ADS)

    Thirunavukarasu, Gopinath; Kundu, Sukumar; Chatterjee, Subrata

    2016-02-01

    Herein, a systematic investigation was carried out to reach a rational understanding and to provide information concerning the possible causes for a significant influence of pressure variation in the underlying processes of mass transport in polycrystalline materials. The authors focused their research in solid-state diffusion, a part of the subject "Mass Transport in Solids". Theories on diffusion are the subject by itself which exists as a latent fingerprint in every text of higher learning in interdisciplinary science. In this research, authors prepared sandwich samples of titanium alloy and stainless steel using nickel as an intermediate metal. The samples were processed at three different levels of bonding pressure (3, 4 and 5 MPa) while bonding temperature and bonding time was maintained at 750 °C and 1 h, respectively, throughout the experiments. It was observed that the net flux of atomic diffusion of nickel atoms into Ti-alloy at TiA/Ni interface increased by ~63 % with the rise in the bonding pressure from 3 to 4 MPa, but decreased by ~40 % with the rise in the bonding pressure from 4 to 5 MPa. At the same time, the net flux of atomic diffusion of nickel atoms into stainless steel at Ni/SS interface increased by ~19 % with the rise in the bonding pressure from 3 to 4 MPa, but increased by ~17 % with the rise in the bonding pressure from 4 to 5 MPa. Here authors showed that the pressure variations have different effects at the TiA/Ni interface and Ni/SS interface, and tried to explain the explicit mechanisms operating behind them. In general for sandwich samples processed irrespective of bonding pressure chosen, the net flux of Ni-atoms diffused into SS is greater than that of the net flux of Ni-atoms diffused in Ti-alloy matrix by four orders of magnitude. The calculated diffusivity of Ni-atoms into Ti-alloy reaches its highest value of ~5.083 × 10-19 m2/s for the sandwich sample processed using 4-MPa bonding-pressure, whereas the diffusivity of Ni

  9. Growth of poly-crystalline Cu films on Y substrates by picosecond pulsed laser deposition for photocathode applications

    NASA Astrophysics Data System (ADS)

    Gontad, F.; Lorusso, A.; Klini, A.; Manousaki, A.; Perrone, A.; Fotakis, C.

    2015-11-01

    In this work, the deposition of Cu thin films on Y substrates for photocathode applications by pulsed laser deposition employing picosecond laser pulses is reported and compared with the use of nanosecond pulses. The influence of power density (6-50 GW/cm2) on the ablation of the target material, as well as on the properties of the resulting film, is discussed. The material transfer from the target to the substrate surface was found to be rather efficient, in comparison to nanosecond ablation, leading to the growth of films with high thickness. Scanning electron microscope analysis indicated a quasi-continuous film morphology, at low power density values, becoming granular with increasing power density. The structural investigation, through X-ray diffraction, revealed the poly-crystalline nature of the films, with a preferential growth along the (111) crystallographic orientation of Cu cubic network. Finally, energy-dispersive X-ray spectroscopy showed a low contamination level of the grown films, demonstrating the potential of a PLD technique for the fabrication of Cu/Y patterned structures, with applications in radiofrequency electron gun technology.

  10. Degradation of the acousto-electric current saturation behavior in c-axis fiber-textured polycrystalline zinc oxide films

    SciTech Connect

    Pompe, T.; Srikant, V.; Clarke, D.R.

    1996-12-31

    Acoustic-electric current saturation has been observed in thin, polycrystalline Al-doped zinc oxide films grown on fused quartz. The films, grown by laser ablation, are c-axis textured with high angle grain boundaries between the grains. After annealing at 600 C in 0.1 mtorr oxygen, the films exhibit a current saturation at a current density of 2 10{sup 5} A/cm{sup 2} and electric fields of 5 10{sup 3} V/cm. However, under constant field the current density falls and the current saturation behavior is not maintained. Current saturation at the same current density can, however, be restored by increasing the electric field. Similarly, the appearance and disappearance of the current saturation behavior can be reversibly controlled by annealing in different oxygen partial pressures at 200 C. The degradation phenomena is attributed to the high acoustic flux enhancing the diffusion of oxygen along the grain boundaries where oxygen can alter the grain boundary potential barrier and hence the electric field in the grains.

  11. Structure and Growth Control of Organic–Inorganic Halide Perovskites for Optoelectronics: From Polycrystalline Films to Single Crystals

    PubMed Central

    Chen, Yani; He, Minhong; Peng, Jiajun; Sun, Yong

    2016-01-01

    Recently, organic–inorganic halide perovskites have sparked tremendous research interest because of their ground‐breaking photovoltaic performance. The crystallization process and crystal shape of perovskites have striking impacts on their optoelectronic properties. Polycrystalline films and single crystals are two main forms of perovskites. Currently, perovskite thin films have been under intensive investigation while studies of perovskite single crystals are just in their infancy. This review article is concentrated upon the control of perovskite structures and growth, which are intimately correlated for improvements of not only solar cells but also light‐emitting diodes, lasers, and photodetectors. We begin with the survey of the film formation process of perovskites including deposition methods and morphological optimization avenues. Strategies such as the use of additives, thermal annealing, solvent annealing, atmospheric control, and solvent engineering have been successfully employed to yield high‐quality perovskite films. Next, we turn to summarize the shape evolution of perovskites single crystals from three‐dimensional large sized single crystals, two‐dimensional nanoplates, one‐dimensional nanowires, to zero‐dimensional quantum dots. Siginificant functions of perovskites single crystals are highlighted, which benefit fundamental studies of intrinsic photophysics. Then, the growth mechanisms of the previously mentioned perovskite crystals are unveiled. Lastly, perspectives for structure and growth control of perovskites are outlined towards high‐performance (opto)electronic devices. PMID:27812463

  12. Energy and angular distribution of low energy H+ and D+ backscattered from polycrystalline carbon

    SciTech Connect

    Overbury, S. H.; Dittner, P. F.; Datz, S.; Thoe, R. S.

    1980-01-01

    The energy distributions of H/sup +/ and D/sup +/ backscattered from a polycrystalline graphite sample were recorded as a function of total scattering angle, angle of incidence, and for incident beam energies 200 < E/sub i/ < 3000 eV. The general shapes of the distributions are discussed qualitatively, and their variation with incident energy and total scattering angle are explained and compared with theoretical and other experimental results. The average energies E/sup - +/, of the distributions are found to increase relative to the single scattering energy, E/sub k/, with decreasing incident energy, E/sup - +//E/sub k/ also increases with increasing exit angle from the solid in a way which is slightly dependent upon the angle of incidence. The integrated intensities of the distributions are found to depend strongly upon the angle of incidence, with a normally incident beam producing a nearly cosine distribution of backscattered ions and grazing angles of incidence producing an intensity which peaks at an angle forward of the specular direction. Using charge fractions obtained previously for surface scattering from graphite and transmission through thin carbon foil, values of the particle reflection coefficient R/sub N/ are obtained as a function of energy.

  13. Measurement of optical absorption in polycrystalline CVD diamond plates by the phase photothermal method at a wavelength of 10.6 {mu}m

    SciTech Connect

    Luk'yanov, A Yu; Serdtsev, E V; Volkov, P V; Ral'chenko, Viktor G; Savel'ev, A V; Konov, Vitalii I; Khomich, A V

    2008-12-31

    A highly-efficient phase photothermal method is developed for quantitative measurements of the small optical absorption coefficient in thin plates made of highly transparent materials in which bulk losses significantly exceed surface losses. The bulk absorption coefficient at 10.6 {mu}m is estimated in polycrystalline diamond plates grown from the vapour phase (a CVD diamond). The results are compared with those for natural and synthetic diamond single crystals and with the concentrations of nitrogen and hydrogen impurities. The absorption coefficient of the best samples of the CVD diamond did not exceed 0.06 cm{sup -1}, which, taking into account the high thermal conductivity of the CVD diamond (1800-2200 W mK{sup -1} at room temperature), makes this material attractive for fabricating output windows of high-power CO{sub 2} lasers, especially for manufacturing large-size optics. (laser applications and other topics in quantum electronics)

  14. Evolution of morphology and structure of Pb thin films grown by pulsed laser deposition at different substrate temperatures

    SciTech Connect

    Lorusso, Antonella Maiolo, Berlinda; Perrone, Alessio; Gontad, Francisco; Maruccio, Giuseppe; Tasco, Vittorianna

    2014-03-15

    Pb thin films were prepared by pulsed laser deposition on a Si (100) substrate at different growth temperatures to investigate their morphology and structure. The morphological analysis of the thin metal films showed the formation of spherical submicrometer grains whose average size decreased with temperature. X-ray diffraction measurements confirmed that growth temperature influences the Pb polycrystalline film structure. A preferred orientation of Pb (111) normal to the substrate was achieved at 30 °C and became increasingly pronounced along the Pb (200) plane as the substrate temperature increased. These thin films could be used to synthesize innovative materials, such as metallic photocathodes, with improved photoemission performances.

  15. Polycrystalline CuInSe{sub 2} and CdTe PV solar cells. Annual subcontract report, 15 April 1993--14 April 1994

    SciTech Connect

    Dhere, N.G.

    1994-11-01

    This is an annual technical report on the Phase 2 of a three-year phased research program. The principal objective of the research project is to develop novel and low-cost processes for the fabrication of stable and efficient CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} and CdTe polycrystalline-thin-film solar cells using reliable techniques amenable to scale-up for economic, large-scale manufacture. The aims are to develop a process for the non-toxic selenization so as to avoid the use of extremely toxic H{sub 2}Se in the fabrication of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} thin-film solar cells; to optimize selenization parameters; to develop a process for the fabrication of CdTe solar cells using Cd and Te layers sputtered from elemental targets; to develop an integrated process for promoting the interdiffusion between Cd/Te layers, CdTe phase formation, grain growth, type conversion, and junction formation; to improve adhesion; to minimize residual stresses; to improve the metallic back-contact; to improve the uniformity, stoichiometry, and morphology of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} and CdTe thin films; and to improve the efficiency of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} and CdTe solar cells.

  16. Polycrystalline CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, April 15, 1992--April 14, 1993

    SciTech Connect

    Dhere, N.G.

    1994-08-01

    The principal objective of the research project is to develop processes for the fabrication of cadmium-telluride, CdTe, and copper-indium-gallium-diselenide, Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2}, polycrystalline-thin-film solar cells using techniques that can be scaled-up for economic manufacture on a large scale. The aims are to fabricate CdTe solar cells using Cd and Te layers sputtered from elemental targets; to promote the interdiffusion between Cd/Te layers, CdTe phase formation, and grain growth; to utilize non-toxic selenization so as to avoid the use of extremely toxic H{sub 2}Se in the fabrication of Cu(In{sub l{minus}x}Ga{sub x})Se{sub 2} thin-film solar cells; to optimize selenization parameters; to improve adhesion; to minimize residual stresses; to improve the uniformity, stoichiometry, and morphology of CdTe and Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2} thin films, and the efficiency of CdTe and Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2} solar cells.

  17. Large piezoelectric response of BiFeO3/BaTiO3 polycrystalline films induced by the low-symmetry phase.

    PubMed

    Hou, Y F; Li, W L; Zhang, T D; Wang, W; Cao, W P; Liu, X L; Fei, W D

    2015-05-01

    BaTiO3, BiFeO3 and BiFeO3/BaTiO3 polycrystalline films were prepared by the radio frequency magnetron sputtering on the Pt/Ti/SiO2/Si substrate. The phase structure, converse piezoelectric coefficient and domain structure of BaTiO3, BiFeO3 and BiFeO3/BaTiO3 thin films are characterized by XRD and PFM, respectively. The converse piezoelectric coefficient d33 of BiFeO3/BaTiO3 thin films is 119.5 pm V(-1), which is comparable to that of lead-based piezoelectric films. The large piezoelectric response of BiFeO3/BaTiO3 thin films is ascribed to the low-symmetry T-like phase BiFeO3, because the spontaneous polarization vector of T-like phase (with monoclinic symmetry) BiFeO3 can rotate easily under external field. In addition, the reduced leakage current and major domains with upward polarization are also attributed to the large piezoelectricity.

  18. Determination of crystal growth rates during rapid solidification of polycrystalline aluminum by nano-scale spatio-temporal resolution in situ transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Zweiacker, K.; McKeown, J. T.; Liu, C.; LaGrange, T.; Reed, B. W.; Campbell, G. H.; Wiezorek, J. M. K.

    2016-08-01

    In situ investigations of rapid solidification in polycrystalline Al thin films were conducted using nano-scale spatio-temporal resolution dynamic transmission electron microscopy. Differences in crystal growth rates and asymmetries in melt pool development were observed as the heat extraction geometry was varied by controlling the proximity of the laser-pulse irradiation and the associated induced melt pools to the edge of the transmission electron microscopy support grid, which acts as a large heat sink. Experimental parameters have been established to maximize the reproducibility of the material response to the laser-pulse-related heating and to ensure that observations of the dynamical behavior of the metal are free from artifacts, leading to accurate interpretations and quantifiable measurements with improved precision. Interface migration rate measurements revealed solidification velocities that increased consistently from ˜1.3 m s-1 to ˜2.5 m s-1 during the rapid solidification process of the Al thin films. Under the influence of an additional large heat sink, increased crystal growth rates as high as 3.3 m s-1 have been measured. The in situ experiments also provided evidence for development of a partially melted, two-phase region prior to the onset of rapid solidification facilitated crystal growth. Using the experimental observations and associated measurements as benchmarks, finite-element modeling based calculations of the melt pool evolution after pulsed laser irradiation have been performed to obtain estimates of the temperature evolution in the thin films.

  19. The importance of stress percolation patterns in rocks and other polycrystalline materials

    PubMed Central

    Burnley, P.C.

    2013-01-01

    A new framework for thinking about the deformation behavior of rocks and other heterogeneous polycrystalline materials is proposed, based on understanding the patterns of stress transmission through these materials. Here, using finite element models, I show that stress percolates through polycrystalline materials that have heterogeneous elastic and plastic properties of the same order as those found in rocks. The pattern of stress percolation is related to the degree of heterogeneity in and statistical distribution of the elastic and plastic properties of the constituent grains in the aggregate. The development of these stress patterns leads directly to shear localization, and their existence provides insight into the formation of rhythmic features such as compositional banding and foliation in rocks that are reacting or dissolving while being deformed. In addition, this framework provides a foundation for understanding and predicting the macroscopic rheology of polycrystalline materials based on single-crystal elastic and plastic mechanical properties. PMID:23823992

  20. The importance of stress percolation patterns in rocks and other polycrystalline materials.

    PubMed

    Burnley, P C

    2013-01-01

    A new framework for thinking about the deformation behavior of rocks and other heterogeneous polycrystalline materials is proposed, based on understanding the patterns of stress transmission through these materials. Here, using finite element models, I show that stress percolates through polycrystalline materials that have heterogeneous elastic and plastic properties of the same order as those found in rocks. The pattern of stress percolation is related to the degree of heterogeneity in and statistical distribution of the elastic and plastic properties of the constituent grains in the aggregate. The development of these stress patterns leads directly to shear localization, and their existence provides insight into the formation of rhythmic features such as compositional banding and foliation in rocks that are reacting or dissolving while being deformed. In addition, this framework provides a foundation for understanding and predicting the macroscopic rheology of polycrystalline materials based on single-crystal elastic and plastic mechanical properties.