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Sample records for polycrystalline 3c-sic thin

  1. Polycrystalline thin film photovoltaic technology

    SciTech Connect

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L.; Noufi, R.

    1991-03-01

    Low-cost, high-efficiency thin-film modules are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. In this paper we review the significant technical progress made in the following thin films: copper indium diselenide, cadmium telluride, and polycrystalline thin silicon films. Also, the recent US DOE/SERI initiative to commercialize these emerging technologies is discussed. 6 refs., 9 figs.

  2. Polycrystalline thin films FY 1992 project report

    SciTech Connect

    Zweibel, K.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  3. Modeling of polycrystalline thin film solar cells

    NASA Astrophysics Data System (ADS)

    Fahrenbruch, Alan L.

    1999-03-01

    This paper describes modeling polycrystalline thin-film solar cells using the program AMPS-1D1 to visualize the relationships between the many variables involved. These simulations are steps toward two dimensional modeling the effects of grain boundaries in polycrystalline cells. Although this paper describes results for the CdS/CdTe cell, the ideas presented here are applicable to copper-indium-gallium selenide (CIGS) cells as well as other types of cells. Results of these one-dimensional simulations are presented: (a) the duplication of experimentally observed cell parameters, (b) the effects of back-contact potential barrier height and its relation to stressing the cell, (c) the effects of the depletion layer width in the CdTe layer on cell parameters, and (d) the effects of CdS layer thickness on the cell parameters. Experience using the software is also described.

  4. Polycrystalline thin film materials and devices

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. . Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  5. Polycrystalline-thin-film thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  6. Progress in polycrystalline thin-film solar cells

    SciTech Connect

    Zweibel, K; Hermann, A; Mitchell, R

    1983-07-01

    Photovoltaic devices based on several polycrystalline thin-film materials have reached near and above 10% sunlight-to-electricity conversion efficiencies. This paper examines the various polycrystalline thin-film PV materials including CuInSe/sub 2/ and CdTe in terms of their material properties, fabrication techniques, problems, and potentials.

  7. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect

    Not Available

    2013-06-01

    This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

  8. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

  9. Polycrystalline silicon conductivity modulated thin film transistors

    NASA Astrophysics Data System (ADS)

    Anish, Kumar K. P.

    1997-09-01

    Polycrystalline silicon (poly-Si) thin-film transistors (TFTs) on glass has received significant attention for use in large area microelectronic applications. These applications include both niche and large volume applications such as printer drivers, image scanners, active-matrix liquid crystal displays (AMLCDs), electro-luminescent displays, plasma assisted displays, etc. Currently, the leading technology for these applications is amorphous-Si (a-Si) TFT. However, as the information content increases, a-Si technology encounters severe challenges due to its inherent low mobility, high parasitic capacitance, low aperture ratio, and non-compatibility to CMOS process. On the other hand, poly-Si technology offers high mobility, low parasitic capacitance, small size, CMOS compatibility, good stability, and uses the infrastructure of silicon science and technology. Thus, a simple low temperature poly-Si technology which allows large area system integration on panel will be in great demand for future high definition displays. However, it was found that poly-Si material properties vary with its method of preparation, its grain size, its surface roughness, and the nature and distribution of the inter-granular and bulk defects. Therefore, extensive studies are needed to optimize the key parameters such as the off-current, on-current, and breakdown voltage of the devices. These parameters can be optimized by means of material preparation as well as innovative device designs. In this thesis, three TFT structures were invented and fabricated using a simple low temperature poly-Si technology. With these novel structures, pixels, pixel drivers, and analog and digital peripheral circuits can all be built on the same glass substrate. This allows the ultimate goal of display systems on glass to be much more closer to reality. First, a high voltage transistor called the Conductivity Modulated Thin Film Transistor (CMTFT) is presented. Using this structure, the fundamental current

  10. Polycrystalline thin film materials and devices

    NASA Astrophysics Data System (ADS)

    Baron, B. N.; Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E.

    1991-11-01

    Results and conclusions of Phase 1 of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe2 and CdTe solar cells. The kinetics of the formation of CuInSe2 by selenization with hydrogen selenide was investigated and a CuInSe2/Cds solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe2 films and a cell efficiency of 7 percent. Detailed investigations of the open circuit voltage of CuInSe2 solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe2 thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe2 is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10 percent can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm(exp 2) are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.

  11. RESEARCH ON THIN FILM POLYCRYSTALLINE SOLAR CELLS.

    DTIC Science & Technology

    Studies of factors affecting the properties of polycrystalline CdTe film grown by the vapor reaction process are discussed and a variety of...molybdenum substrates are compared. No real differences are found. Rough measures of temperature effects and tellurium flow rate on film growth rate are

  12. Improved transport properties of polycrystalline YBCO thin-films

    NASA Astrophysics Data System (ADS)

    Azoulay, J.; Verdyan, A.; Lapsker, I.

    1994-12-01

    Resistive evaporation technique was used to fabricate polycrystalline YBaCuO and YBaNaCuO thin films on MgO substrates. Heat treatment was carried out in a low oxygen partial pressure. Polycrystalline YBCO and Na doped YBCO thin films samples were thus obtained using the same technique and conditions. The critical current density of Na doped YBCO sample was measured to be significantly higher than that of the undoped YBCO one. The results are discussed in terms of the Na contribution to the intragrain conductivity.

  13. Polycrystalline Thin-Film Photovoltaic Technologies: Progress and Technical Issues

    SciTech Connect

    Ullal, H. S.

    2004-08-01

    Polycrystalline thin-film materials based on copper indium diselenide (CuInSe2, CIS) and cadmium telluride (CdTe) are promising thin-film solar cells for various power and specialty applications. Impressive results have been obtained in the past few years for both thin-film copper indium gallium diselenide (CIGS) solar cells and thin-film CdTe solar cells. NCPV/NREL scientists have achieved world-record, total-area efficiencies of 19.3% for a thin-film CIGS solar cell and 16.5% for thin-film CdTe solar cell. A number of technical R&D issues related to CIS and CdTe have been identified. Thin-film power module efficiencies up to 13.4% has been achieved thus far. Tremendous progress has been made in the technology development for module fabrication, and multi-megawatt manufacturing facilities are coming on line with expansion plans in the next few years. Several 40-480 kW polycrystalline thin-film, grid-connected PV arrays have been deployed worldwide. Hot and humid testing is also under way to validate the long-term reliability of these emerging thin-film power products. The U.S. thin-film production (amorphous silicon[a-Si], CIS, CdTe) is expected to exceed 50 MW by the end of 2005.

  14. Polycrystalline Thin Film Device Degradation Studies

    SciTech Connect

    Albin, D. S.; McMahon, T. J.; Pankow, J. W.; Noufi, R.; Demtsu, S. H.; Davies, A.

    2005-11-01

    Oxygen during vapor CdCl2 (VCC) treatments significantly reduced resistive shunts observed in CdS/CdTe polycrystalline devices using thinner CdS layers during 100 deg C, open-circuit, 1-sun accelerated stress testing. Cu oxidation resulting from the reduction of various trace oxides present in as-grown and VCC treated films is the proposed mechanism by which Cu diffusion, and subsequent shunts are controlled. Graphite paste layers between metallization and CdTe behave like diffusion barriers and similarly benefit device stability. Ni-based contacts form a protective Ni2Te3 intermetallic layer that reduces metal diffusion but degrades performance through increased series resistance.

  15. Dynamical electrophotoconductivity in polycrystalline thin films

    NASA Technical Reports Server (NTRS)

    Kowel, S. T.; Kornreich, P. G.

    1982-01-01

    Polycrystalline cadmium sulfide (CdS) films were deposited on lithium niobate (LiNbO3) substrates by vacuum evaporation and annealed to obtain high photosensitivity. The change in photoconductivity of these films due to the penetration of electric fields associated with elastic waves propagating on their substrates was demonstrated and studied. The relationship between the acoustic electric field and the induced change in film conductivity was found to be a nonlinear one. The fractional change in conductivity is strongly dependent on the light intensity and the film temperature, showing a prominent maximum as a function of these quantities. The largest recorded fractional change in conductivity was about 25% at electric fields of the order of 1,000 volts per centimeter. A phenomological model was developed based on the interaction between the space charge created by the electric field and the electron trapping states in the photoconductor.

  16. Flexible polycrystalline thin-film photovoltaics for space applications

    NASA Technical Reports Server (NTRS)

    Armstrong, J. H.; Lanning, B. R.; Misra, M. S.; Kapur, V. K.; Basol, B. M.

    1993-01-01

    Polycrystalline thin-film photovoltaics (PV), such as CIS and CdTe, have received considerable attention recently with respect to space power applications. Their combination of stability, efficiency, and economy from large-scale monolithic-integration of modules can have significant impact on cost and weight of PV arrays for spacecraft and planetary experiments. An added advantage, due to their minimal thickness (approximately 6 microns sans substrate), is the ability to manufacture lightweight, flexible devices (approximately 2000 W/kg) using large-volume manufacturing techniques. The photovoltaic effort at Martin Marietta and ISET is discussed, including large-area, large-volume thin-film deposition techniques such as electrodeposition and rotating cylindrical magnetron sputtering. Progress in the development of flexible polycrystalline thin-film PV is presented, including evaluation of flexible CIS cells. In addition, progress on flexible CdTe cells is presented. Finally, examples of lightweight, flexible arrays and their potential cost and weight impact is discussed.

  17. Polycrystalline thin-film solar cells and modules

    SciTech Connect

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  18. Hydrogen passivation of polycrystalline silicon thin films

    NASA Astrophysics Data System (ADS)

    Scheller, L.-P.; Weizman, M.; Simon, P.; Fehr, M.; Nickel, N. H.

    2012-09-01

    The influence of post-hydrogenation on the electrical and optical properties of solid phase crystallized polycrystalline silicon (poly-Si) was examined. The passivation of grain-boundary defects was measured as a function of the passivation time. The silicon dangling-bond concentration decreases with increasing passivation time due to the formation of Si-H complexes. In addition, large H-stabilized platelet-like clusters are generated. The influence of H on the electrical properties was investigated using temperature dependent conductivity and Hall-effect measurements. For poly-Si on Corning glass, the dark conductivity decreases upon hydrogenation, while it increases when the samples are fabricated on silicon-nitride covered Borofloat glass. Hall-effect measurements reveal that for poly-Si on Corning glass the hole concentration and the mobility decrease upon post-hydrogenation, while a pronounced increase is observed for poly-Si on silicon-nitride covered Borofloat glass. This indicates the formation of localized states in the band gap, which is supported by sub band-gap absorption measurments. The results are discussed in terms of hydrogen-induced defect passivation and generation mechanisms.

  19. Polycrystalline thin-film technology: Recent progress in photovoltaics

    NASA Astrophysics Data System (ADS)

    Mitchell, R. L.; Zweibel, K.; Ullal, H. S.

    1991-12-01

    Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe2), cadmium telluride (CdTe), and thin film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin film CuInSe2, has made some rapid advances in terms of high efficiency and long term reliability. For CuInSe2 power modules, a world record has been reported on a 0.4 sq m module with an aperture-area efficiency of 10.4 pct. and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe2 modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 sq cm. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10 pct.; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

  20. Fabrication of polycrystalline thin films by pulsed laser processing

    DOEpatents

    Mitlitsky, Fred; Truher, Joel B.; Kaschmitter, James L.; Colella, Nicholas J.

    1998-02-03

    A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

  1. Fabrication of polycrystalline thin films by pulsed laser processing

    DOEpatents

    Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

    1998-02-03

    A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

  2. Progress and issues in polycrystalline thin-film PV technologies

    SciTech Connect

    Zweibel, K.; Ullal, H.S.; Roedern, B. von

    1996-05-01

    Substantial progress has occurred in polycrystalline thin-film photovoltaic technologies in the past 18 months. However, the transition to first-time manufacturing is still under way, and technical problems continue. This paper focuses on the promise and the problems of the copper indium diselenide and cadmium telluride technologies, with an emphasis on continued R&D needs for the near-term transition to manufacturing and for next-generation improvements. In addition, it highlights the joint R&D efforts being performed in the U.S. Department of Energy/National Renewable Energy Laboratory Thin-Film Photovoltaic Partnership Program.

  3. Thin film polycrystalline silicon nanowire biosensors.

    PubMed

    Hakim, Mohammad M A; Lombardini, Marta; Sun, Kai; Giustiniano, Francesco; Roach, Peter L; Davies, Donna E; Howarth, Peter H; de Planque, Maurits R R; Morgan, Hywel; Ashburn, Peter

    2012-04-11

    Polysilicon nanowire biosensors have been fabricated using a top-down process and were used to determine the binding constant of two inflammatory biomarkers. A very low cost nanofabrication process was developed, based on simple and mature photolithography, thin film technology, and plasma etching, enabling an easy route to mass manufacture. Antibody-functionalized nanowire sensors were used to detect the proteins interleukin-8 (IL-8) and tumor necrosis factor-alpha (TNF-α) over a wide range of concentrations, demonstrating excellent sensitivity and selectivity, exemplified by a detection sensitivity of 10 fM in the presence of a 100,000-fold excess of a nontarget protein. Nanowire titration curves gave antibody-antigen dissociation constants in good agreement with low-salt enzyme-linked immunosorbent assays (ELISAs). This fabrication process produces high-quality nanowires that are suitable for low-cost mass production, providing a realistic route to the realization of disposable nanoelectronic point-of-care (PoC) devices.

  4. Controlled nanostructuration of polycrystalline tungsten thin films

    SciTech Connect

    Girault, B.; Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O.; Sauvage, T.

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  5. Advances in polycrystalline thin-film photovoltaics for space applications

    SciTech Connect

    Lanning, B.R.; Armstrong, J.H.; Misra, M.S.

    1994-09-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 eV and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not `reactor-specific` and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a `substrate configuration` by physical vapor deposition techniques and CdTe cells/modules are fabricated in a `superstrate configuration` by wet chemical methods.

  6. Advances in polycrystalline thin-film photovoltaics for space applications

    NASA Astrophysics Data System (ADS)

    Lanning, Bruce R.; Armstrong, Joseph H.; Misra, Mohan S.

    1994-09-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical

  7. Advances in polycrystalline thin-film photovoltaics for space applications

    NASA Technical Reports Server (NTRS)

    Lanning, Bruce R.; Armstrong, Joseph H.; Misra, Mohan S.

    1994-01-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical

  8. Anisotropic thermal conductivity of thin polycrystalline oxide samples

    SciTech Connect

    Tiwari, A.; Boussois, K.; Nait-Ali, B.; Smith, D. S.; Blanchart, P.

    2013-11-15

    This paper reports about the development of a modified laser-flash technique and relation to measure the in-plane thermal diffusivity of thin polycrystalline oxide samples. Thermal conductivity is then calculated with the product of diffusivity, specific heat and density. Design and operating features for evaluating in-plane thermal conductivities are described. The technique is advantageous as thin samples are not glued together to measure in-plane thermal conductivities like earlier methods reported in literature. The approach was employed to study anisotropic thermal conductivity in alumina sheet, textured kaolin ceramics and montmorillonite. Since it is rare to find in-plane thermal conductivity values for such anisotropic thin samples in literature, this technique offers a useful variant to existing techniques.

  9. Different spin relaxation mechanisms between epitaxial and polycrystalline Ta thin films

    NASA Astrophysics Data System (ADS)

    Gamou, Hiromu; Ryu, Jeongchun; Kohda, Makoto; Nitta, Junsaku

    2017-02-01

    We demonstrate that spin relaxation mechanisms are different between epitaxial Ta and disordered polycrystalline Ta thin films by determining the relationship between spin relaxation time and diffusion constant. To control the diffusion constant, epitaxial Ta and polycrystalline Ta thin films are prepared by sputtering on different substrates and at different growth temperatures. The spin relaxation time is extracted from the results of weak antilocalization analysis including the superconducting fluctuation effect. The dominant spin relaxation mechanism for polycrystalline Ta thin films is the Elliot–Yafet mechanism, as is expected for centrosymmetric metal films. In contrast, the D’yakonov–Perel’ mechanism plays a role in epitaxial Ta thin films.

  10. Formation of porous grain boundaries in polycrystalline silicon thin films

    NASA Astrophysics Data System (ADS)

    Kageyama, Yasuyuki; Murase, Yoshie; Tsuchiya, Toshiyuki; Funabashi, Hirofumi; Sakata, Jiro

    2002-06-01

    Unique polycrystalline silicon (poly-Si) thin films, which were permeable to a concentrated hydrofluoric acid solution through their porous grain boundaries, were investigated to elucidate the formation mechanism of their microstructure. 0.1-μm-thick permeable poly-Si thin films were made through processes of amorphous silicon film formation by low pressure chemical vapor deposition, successive postannealing for crystallization, and excess phosphorus diffusion by a phosphorus oxichloride predeposition. At the grain boundaries, porous microstructures were formed after the films were cleaned in an SC1 solution (a 1:1:5 mixture of NH4OH:H2O2:H2O at 80 °C for 10 min), whereas segregated soluble precipitates observed by a field emission secondary electron microscope were present before the SC1 cleaning. Auger electron microscope revealed that the surface of the precipitates mainly consist of silicon (˜80 at. %) and oxygen (˜20 at. %). As a result of transmission electron microscope observation, it is concluded that enhancement of silicon atom mobility by the phosphorus doping process induced consequent segregation of the soluble precipitates at the grain boundaries.

  11. High-Efficiency Polycrystalline Thin Film Tandem Solar Cells.

    PubMed

    Kranz, Lukas; Abate, Antonio; Feurer, Thomas; Fu, Fan; Avancini, Enrico; Löckinger, Johannes; Reinhard, Patrick; Zakeeruddin, Shaik M; Grätzel, Michael; Buecheler, Stephan; Tiwari, Ayodhya N

    2015-07-16

    A promising way to enhance the efficiency of CIGS solar cells is by combining them with perovskite solar cells in tandem devices. However, so far, such tandem devices had limited efficiency due to challenges in developing NIR-transparent perovskite top cells, which allow photons with energy below the perovskite band gap to be transmitted to the bottom cell. Here, a process for the fabrication of NIR-transparent perovskite solar cells is presented, which enables power conversion efficiencies up to 12.1% combined with an average sub-band gap transmission of 71% for photons with wavelength between 800 and 1000 nm. The combination of a NIR-transparent perovskite top cell with a CIGS bottom cell enabled a tandem device with 19.5% efficiency, which is the highest reported efficiency for a polycrystalline thin film tandem solar cell. Future developments of perovskite/CIGS tandem devices are discussed and prospects for devices with efficiency toward and above 27% are given.

  12. Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

  13. Fundamentals of polycrystalline thin film materials and devices

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. . Inst. of Energy Conversion)

    1991-01-01

    This report presents the results of a one-year research program on polycrystalline thin-film solar cells. The research was conducted to better understand the limitations and potential of solar cells using CuInSe{sub 2} and CdTe by systematically investigating the fundamental relationships linking material processing, material properties, and device behavior. By selenizing Cu and In layers, we fabricated device-quality CuInSe{sub 2} thin films and demonstrated a CuInSe{sub 2} solar cell with 7% efficiency. We added Ga, to increase the band gap of CuInSe{sub 2} devices to increase the open-circuit voltage to 0.55 V. We fabricated and analyzed Cu(InGa)Se{sub 2}/CuInSe{sub 2} devices to demonstrate the potential for combining the benefits of higher V{sub oc} while retaining the current-generating capacity of CuInSe{sub 2}. We fabricated an innovative superstrate device design with more than 5% efficiency, as well as a bifacial spectral-response technique for determining the electron diffusion length and optical absorption coefficient of CuInSe{sub 2} in an operational cell. The diffusion length was found to be greater than 1 {mu}m. We qualitatively modeled the effect of reducing heat treatments in hydrogen and oxidizing treatments in air on the I-V behavior of CuInSe{sub 2} devices. We also investigated post-deposition heat treatments and chemical processing and used them to fabricate a 9.6%-efficient CdTe/CdS solar cell using physical vapor deposition.

  14. Charge carrier transport in polycrystalline organic thin film based field effect transistors

    NASA Astrophysics Data System (ADS)

    Rani, Varsha; Sharma, Akanksha; Ghosh, Subhasis

    2016-05-01

    The charge carrier transport mechanism in polycrystalline thin film based organic field effect transistors (OFETs) has been explained using two competing models, multiple trapping and releases (MTR) model and percolation model. It has been shown that MTR model is most suitable for explaining charge carrier transport in grainy polycrystalline organic thin films. The energetic distribution of traps determined independently using Mayer-Neldel rule (MNR) is in excellent agreement with the values obtained by MTR model for copper phthalocyanine and pentacene based OFETs.

  15. Faraday effect of polycrystalline bismuth iron garnet thin film prepared by mist chemical vapor deposition method

    NASA Astrophysics Data System (ADS)

    Yao, Situ; Kamakura, Ryosuke; Murai, Shunsuke; Fujita, Koji; Tanaka, Katsuhisa

    2017-01-01

    We have synthesized polycrystalline thin film composed of a single phase of metastable bismuth iron garnet, Bi3Fe5O12, on a fused silica substrate, one of the most widely utilized substrates in the solid-state electronics, by using mist chemical vapor deposition (mist CVD) method. The phase purity and stoichiometry are confirmed by X-ray diffraction and Rutherford backscattering spectrometry. The resultant thin film shows a small surface roughness of 3.251 nm. The saturation magnetization at room temperature is 1200 G, and the Faraday rotation angle at 633 nm reaches -5.2 deg/μm. Both the magnetization and the Faraday rotation angles are somewhat higher than those of polycrystalline BIG thin films prepared by other methods.

  16. Insights into microstructural evolution and polycrystalline compounds formation from Pd Ge thin films

    NASA Astrophysics Data System (ADS)

    Chen, Zhiwen; Shek, C. H.; Lai, J. K. L.

    2005-04-01

    Polycrystalline Pd-Ge thin films, prepared on freshly cleaved single crystal NaCl (1 0 0) substrate by evaporation techniques, were characterized for their composition, morphologies, and crystalline structure by transmission electron microscopy (TEM). The experimental results indicated that the formation of Pd 2Ge and PdGe compounds dominated at low annealing temperatures, and it also affected the crystallization of amorphous Ge. The reactions of Pd and Ge are sensitively dependent on the annealing temperatures and the thickness ratio of Pd and Ge films. The crystallization of amorphous Ge and the reactions of Pd and Ge are mutually competitive in polycrystalline Pd-Ge thin films. The grain nucleation, growth, and aggregation in Pd-Ge thin films during processing are discussed in terms of the fundamental kinetic processes.

  17. Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

    SciTech Connect

    Do, Woori; Jin, Won-Beom; Choi, Jungwan; Bae, Seung-Muk; Kim, Hyoung-June; Kim, Byung-Kuk; Park, Seungho; Hwang, Jin-Ha

    2014-10-15

    Highlights: • Intensified visible light irradiation was generated via a high-powered Xe arc lamp. • The disordered Si atomic structure absorbs the intensified visible light. • The rapid heating activates electrically boron-implanted Si thin films. • Flash lamp heating is applicable to low temperature polycrystalline Si thin films. - Abstract: Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in the electrical activation of boron-implanted Si thin films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films.

  18. Superconductor—Insulator Transitions in Pure Polycrystalline Nb Thin Films

    NASA Astrophysics Data System (ADS)

    Couedo, F.; Crauste, O.; Bergé, L.; Dolgorouky, Y.; Marrache-Kikuchi, C.; Dumoulin, L.

    2012-12-01

    We report on a study of the transport properties of Nb thin films. By varying the thickness of the films from 263 Å to 25 Å, we observed a depression of the superconductivity. Magnetic field was also applied up to 6 T, inducing the disappearance of the superconductivity and the onset of an insulating behavior. The results were compared to those we have already obtained on a highly disordered system, a-NbxSi1-x, to understand whether the same mechanisms for the disappearance of the superconductivity could be at play in pure metallic thin films and in highly disordered systems.

  19. Properties of boron-doped thin films of polycrystalline silicon

    SciTech Connect

    Merabet, Souad

    2013-12-16

    The properties of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped heavily in situ boron-doped with concentration level of around 2×10{sup 20}cm{sup −3} has been studied. Their properties are analyzed using electrical and structural characterization means by four points probe resistivity measurements and X-ray diffraction spectra. The thermal-oxidation process are performed on sub-micron layers of 200nm/c-Si and 200nm/SiO{sub 2} deposited at temperatures T{sub d} ranged between 520°C and 605°C and thermally-oxidized in dry oxygen ambient at 945°C. Compared to the as-grown resistivity with silicon wafers is known to be in the following sequence <ρ{sub 200nm/c−Si}> < <ρ{sub 200nm/SiO2}> and <ρ{sub 520}> < <ρ{sub 605}>. The measure X-ray spectra is shown, that the Bragg peaks are marked according to the crystal orientation in the film deposited on bare substrates (poly/c-Si), for the second series of films deposited on bare oxidized substrates (poly/SiO{sub 2}) are clearly different.

  20. Polycrystalline thin film materials and devices. Final subcontract report, 16 January 1990--15 January 1993

    SciTech Connect

    Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.; Yokimcus, T.A.

    1993-08-01

    This report describes results and conclusions of the final phase (III) of a three-year research program on polycrystalline thin-film heterojunction solar cells. The research consisted of the investigation of the relationships between processing, materials properties, and device performance. This relationship was quantified by device modeling and analysis. The analysis of thin-film polycrystalline heterojunction solar cells explains how minority-carrier recombination at the metallurgical interface and at grain boundaries can be greatly reduced by the proper doping of the window and absorber layers. Additional analysis and measurements show that the present solar cells are limited by the magnitude of the diode current, which appears to be caused by recombination in the space charge region. Developing an efficient commercial-scale process for fabricating large-area polycrystalline, thin-film solar cells from a research process requires a detailed understanding of the individual steps in making the solar cell, and their relationship to device performance and reliability. The complexities involved in characterizing a process are demonstrated with results from our research program on CuInSe{sub 2}, and CdTe processes.

  1. Simulation of electrical conduction in thin polycrystalline metallic films: Impact of microstructure

    SciTech Connect

    Rickman, J. M.; Barmak, K.

    2013-10-07

    We examine the impact of microstructural features on the electrical conductivity of a thin metallic film using Monte Carlo simulation. In particular, we obtain the dependence of the conductivity (in the absence of surface scattering) on average grain size and electron scattering mechanisms, the latter parametrized by a transmission coefficient, for a model polycrystal generated by a Voronoi tessellation. We find that the conductivity can be described in limiting cases in terms of either a simplified hopping model or a trapping model. Finally, we compare our results with the Mayadas-Shatzkes model of grain-boundary scattering and with experimental resistivity measurements for polycrystalline copper thin films.

  2. Polycrystalline Mg{sub 2}Si thin films: A theoretical investigation of their electronic transport properties

    SciTech Connect

    Balout, H.; Boulet, P.; Record, M.-C.

    2015-05-15

    The electronic structures and thermoelectric properties of a polycrystalline Mg{sub 2}Si thin film have been investigated by first-principle density-functional theory (DFT) and Boltzmann transport theory calculations within the constant-relaxation time approximation. The polycrystalline thin film has been simulated by assembling three types of slabs each having the orientation (001), (110) or (111) with a thickness of about 18 Å. The effect of applying the relaxation procedure to the thin film induces disorder in the structure that has been ascertained by calculating radial distribution functions. For the calculations of the thermoelectric properties, the energy gap has been fixed at the experimental value of 0.74 eV. The thermoelectric properties, namely the Seebeck coefficient, the electrical conductivity and the power factor, have been determined at three temperatures of 350 K, 600 K and 900 K with respect to both the energy levels and the p-type and n-type doping levels. The best Seebeck coefficient is obtained at 350 K: the S{sub yy} component of the tensor amounts to about ±1000 μV K{sup −1}, depending on the type of charge carriers. However, the electrical conductivity is much too small which results in low values of the figure of merit ZT. Structure–property relationship correlations based on directional radial distribution functions allow us to tentatively draw some explanations regarding the anisotropy of the electrical conductivity. Finally, the low ZT values obtained for the polycrystalline Mg{sub 2}Si thin film are paralleled with those recently reported in the literature for bulk chalcogenide glasses. - Graphical abstract: Structure of the polycrystalline thin film of Mg{sub 2}Si. - Author-Highlights: • Polycrystalline Mg{sub 2}Si film has been modelled by DFT approach. • Thermoelectric properties have been evaluated by semi-classical Boltzmann theory. • The structure was found to be slightly disordered after relaxation. • The highest

  3. Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

    SciTech Connect

    Antesberger, T.; Wassner, T. A.; Jaeger, C.; Algasinger, M.; Kashani, M.; Scholz, M.; Matich, S.; Stutzmann, M.

    2013-05-27

    Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2 Multiplication-Sign 10{sup 17} cm{sup -3} and 3 Multiplication-Sign 10{sup 20} cm{sup -3} for phosphorus and 4 Multiplication-Sign 10{sup 18} cm{sup -3} to 3 Multiplication-Sign 10{sup 19} cm{sup -3} for boron-doped layers, with carrier mobilities up to 90 cm{sup 2}/V s.

  4. The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

    NASA Technical Reports Server (NTRS)

    Brown, Ari David; Barrentine, Emily M.; Moseley, Samuel H.; Noroozian, Omid; Stevenson, Thomas

    2016-01-01

    Polycrystalline Nb thin films are extensively used for microwave kinetic inductance detectors (MKIDs) and superconducting transmission line applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the X-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

  5. Preparation of nano-polycrystalline WO3 thin films and their solid-state electrochromic display devices.

    PubMed

    Luo, Jianyi; Zeng, Qingguang; Long, Yongbing; Wang, Yi

    2013-02-01

    In this paper, nano-polycrystalline WO3 thin films with the thickness in the range of 100-200 nm have been uniformly prepared on the designed regions of ITO (indium tin oxide) glass substrates by thermal evaporation deposition. Their crystal structures, surface morphologies and uniformities are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM), respectively. The solid-state electrochromic display (ECD) devices based on these nano-polycrystalline WO3 thin films have been also fabricated and have demonstrated to have better performance than normal thin films, including shorter response time, higher contrast, and furthermore, higher stability to keep the colored state without power consumption. These results demonstrate nano-polycrystalline WO3 thin films can be applied to improve the performance of ECD devices, especially suitable to static display.

  6. Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1991--15 January 1992

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  7. Structural and magnetic properties of polycrystalline La2NiMnO6 thin films

    NASA Astrophysics Data System (ADS)

    Suresh, Pittala; Laxmi, K. Vijaya; Bhat, Shwetha G.; Kumar, P. S. Anil

    2017-07-01

    Polycrystalline thin films of La2NiMnO6 (LNMO) are deposited successfully on SiO2/Si substrates using pulsed laser deposition technique. Structural characterization using X-ray diffraction confirms the formation of a single phase with P21/n space group. Cross-sectional FE-SEM shows the film thickness ˜195 nm. The deposition temperature and the oxygen pressure played a crucial role determining the crystallization behavior and the magnetic transition temperatures. The ferromagnetic transition temperature is achieved to be ˜277 K by optimizing the deposition conditions.

  8. High photocurrent polycrystalline thin-film CdS/CuInSe2 solar cell

    NASA Astrophysics Data System (ADS)

    Mickelsen, R. A.; Chen, W. S.

    1980-03-01

    A polycrystalline thin-film CdS/CuInSe2 heterojunction solar cell with an efficiency of 5.7% has been prepared using a simultaneous elemental evaporation technique to deposit the CuInSe2 film. The cell's short-circuit current of 31 mA/sq cm under 100 mW/sq cm is the highest ever reported for a 1-sq-cm cell. Heat treatments have been found to improve cell efficiency and to also change the cell I-V and C-V characteristics.

  9. Optical and electrical properties of polycrystalline and amorphous Al-Ti thin films

    NASA Astrophysics Data System (ADS)

    Canulescu, S.; Borca, C. N.; Rechendorff, K.; Davidsdóttir, S.; Pagh Almtoft, K.; Nielsen, L. P.; Schou, J.

    2016-04-01

    The structural, optical, and transport properties of sputter-deposited Al-Ti thin films have been investigated as a function of Ti alloying with a concentration ranging from 2% to 46%. The optical reflectivity of Al-Ti films at visible and near-infrared wavelengths decreases with increasing Ti content. X-ray absorption fine structure measurements reveal that the atomic ordering around Ti atoms increases with increasing Ti content up to 20% and then decreases as a result of a transition from a polycrystalline to amorphous structure. The transport properties of the Al-Ti films are influenced by electron scattering at the grain boundaries in the case of polycrystalline films and static defects, such as anti-site effects and vacancies in the case of the amorphous alloys. The combination of Ti having a real refractive index (n) comparable with the extinction coefficient (k) and Al with n much smaller than k allows us to explore the parameter space for the free-electron behavior in transition metal-Al alloys. The free electron model, applied for the polycrystalline Al-Ti films with Ti content up to 20%, leads to an optical reflectance at near infrared wavelengths that scales linearly with the square root of the electrical resistivity.

  10. Magnetoresistance in polycrystalline and epitaxial Fe1-xCoxSi thin films

    NASA Astrophysics Data System (ADS)

    Porter, N. A.; Creeth, G. L.; Marrows, C. H.

    2012-08-01

    Thin films of Fe1-xCoxSi were grown using molecular beam epitaxy on Si(111). These 20-nm-thick films, with compositions x=0 or 0.5, were produced by two methods: the first produced large (111)-textured crystallites of the B20 phase; the second produced phase-pure B20 (111) epilayers. The lattice mismatch with the substrate causes biaxial tensile strain in the layers, greater in the epilayers, that distorts the (111)-oriented material to a rhombohedral form. Magnetotransport measurements show that a combination of additional scattering arising from crystal grain boundaries and strain-free polycrystalline films results in a higher resistivity than for the epitaxial films. Magnetometry for x=0.5 suggests an increase in the ordering temperature in strained films relative to the polycrystalline films of 15±4 K. Moreover, the characteristic linear magnetoresistance, typical of bulk single-crystal material of this composition, is retained in the polycrystalline film but reduced in the epitaxial film. While the bulk properties of these materials are reproduced qualitatively, there are small quantitative modifications, due to the strain, to properties such as band gap, Curie temperature, and magnetoresistance.

  11. Surface oxidation of polycrystalline cadmium telluride thin films for Schottky barrier junction solar cells

    NASA Astrophysics Data System (ADS)

    Yi, X.; Liou, J. J.

    1995-06-01

    Polycrystalline CdTe thin films grown on graphite or tungsten-coated graphite substrates by chemical vapor deposition (CVD) were exposed to the air at room temperature in a natural atmosphere of about 60% air humidity for 6 months. X-ray photoemission spectroscopy (XPS) and Auger electron spectroscopy (AES) of the films indicate that a tellurium dioxide (TeO 2) overlayer has formed from this process. The effects of such an overlayer on the electrical property of polycrystalline CdTe-based Schottky barrier junction solar cells have also been discussed for the first time. It is shown that a solar cell formed on a CdTe film with TeO 2 overlayer has considerably higher open-circuit voltage and fill factor than that formed on a CdTe film without TeO 2 overlayer. Our study further indicates that using a polycrystalline CdTe film which is thermally oxidized at above room temperature (100-400°C) does not provide any improvement on the solar cell efficiency.

  12. Impact of universal mobility law on polycrystalline organic thin-film transistors

    NASA Astrophysics Data System (ADS)

    Raja, Munira; Donaghy, David; Myers, Robert; Eccleston, Bill

    2012-10-01

    We have developed novel analytical models for polycrystalline organic thin-film transistor (OTFT) by employing new concepts on the charge carrier injection to polysilicon thin-films. The models, also incorporate the effect of contact resistance associated with the poor ohmic nature of the contacts. The drain current equations of the OTFT, both in the quasi-diffusion and quasi-drift regimes, predict temperature dependencies on essential material and device parameters. Interestingly, under the drift regime, the polycrystalline OTFT model reveals similar power dependencies on the applied voltages, to those of purely disordered model developed by utilizing the universal mobility law (UML). Such similarities are not thought to be coincidental since the effect of gate voltage on surface potential is influenced by the Fermi level pinning in the grain boundary. Nonetheless, the best fits on the data of 6,13-bis(tri-isopropylsilylethynyl) OTFTs are attained with the proposed polycrystalline rather than the disordered model, particularly at low gate voltages where the diffusive component is dominant. Moreover, in order to understand the effect of grain boundaries, we devise a relationship for the dependency of the effective mobility on carrier concentration, assuming a crystalline region to be in direct contact with a disordered region. Interestingly, we find a similar dependency as the UML in purely disordered materials, which further signifies the conduction to be limited by the grain boundaries. Subsequently, an analytical model for the variation of the effective mobility with gate voltage is established. Such models are vital in assisting the development of more accurate designs of the novel organic circuits.

  13. Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

    NASA Astrophysics Data System (ADS)

    Mitoma, Nobuhiko; Da, Bo; Yoshikawa, Hideki; Nabatame, Toshihide; Takahashi, Makoto; Ito, Kazuhiro; Kizu, Takio; Fujiwara, Akihiko; Tsukagoshi, Kazuhito

    2016-11-01

    The enhancement in electrical conductivity and optical transparency induced by a phase transition from amorphous to polycrystalline in lightly silicon-doped indium oxide (InSiO) thin films is studied. The phase transition caused by simple thermal annealing transforms the InSiO thin films from semiconductors to conductors. Silicon atoms form SiO4 tetrahedra in InSiO, which enhances the overlap of In 5s orbitals as a result of the distortion of InO6 octahedral networks. Desorption of weakly bonded oxygen releases electrons from deep subgap states and enhances the electrical conductivity and optical transparency of the films. Optical absorption and X-ray photoelectron spectroscopy measurements reveal that the phase transition causes a Fermi energy shift of ˜0.2 eV.

  14. Compressive intrinsic stress originates in the grain boundaries of dense refractory polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Magnfält, D.; Fillon, A.; Boyd, R. D.; Helmersson, U.; Sarakinos, K.; Abadias, G.

    2016-02-01

    Intrinsic stresses in vapor deposited thin films have been a topic of considerable scientific and technological interest owing to their importance for functionality and performance of thin film devices. The origin of compressive stresses typically observed during deposition of polycrystalline metal films at conditions that result in high atomic mobility has been under debate in the literature in the course of the past decades. In this study, we contribute towards resolving this debate by investigating the grain size dependence of compressive stress magnitude in dense polycrystalline Mo films grown by magnetron sputtering. Although Mo is a refractory metal and hence exhibits an intrinsically low mobility, low energy ion bombardment is used during growth to enhance atomic mobility and densify the grain boundaries. Concurrently, the lateral grain size is controlled by using appropriate seed layers on which Mo films are grown epitaxially. The combination of in situ stress monitoring with ex situ microstructural characterization reveals a strong, seemingly linear, increase of the compressive stress magnitude on the inverse grain size and thus provides evidence that compressive stress is generated in the grain boundaries of the film. These results are consistent with models suggesting that compressive stresses in metallic films deposited at high homologous temperatures are generated by atom incorporation into and densification of grain boundaries. However, the underlying mechanisms for grain boundary densification might be different from those in the present study where atomic mobility is intrinsically low.

  15. Interfacial reactions between amorphous W-Si thin films and polycrystalline overlayers

    SciTech Connect

    Thomas, R.E.; Perepezko, J.H.; Wiley, J.D.

    1985-01-01

    Interactions between amorphous metal thin films and either a substrate or an overlayer can limit their effectiveness as diffusion barriers. We have found in previous studies that Au and Al polycrystalline thin films in contact with amorphous W-Si lowers the crystallization temperature of the a-(W-Si) by at least 100C. In contrast Cu and Mo have no apparent effect on the stability of the amorphous layer. The mechanisms leading to premature crystallization are not well understood. Amorphous W/sub .72/Si/sub .28/ was deposited by dc sputtering onto single crystal Si substrates. Overlayers of Al were then evaporated onto the W-Si. Using Auger electron spectroscopy depth profiling coupled with cross-section TEM, we have studied interfacial reactions between the amorphous layer and polycrystalline Al. Auger profiling results show that in the case of Al overlayers, W and Si diffuse out of the a-(W-Si) into the Al where WAl/sub 12/ forms. These results can be explained in the context of three binary diffusion couples, W-Si, W-Al, Al-Si, and the individual interactions associated with these couples.

  16. Suppressing light reflection from polycrystalline silicon thin films through surface texturing and silver nanostructures

    SciTech Connect

    Akhter, Perveen; Huang, Mengbing Kadakia, Nirag; Spratt, William; Malladi, Girish; Bakhru, Hassarum

    2014-09-21

    This work demonstrates a novel method combining ion implantation and silver nanostructures for suppressing light reflection from polycrystalline silicon thin films. Samples were implanted with 20-keV hydrogen ions to a dose of 10¹⁷/cm², and some of them received an additional argon ion implant to a dose of 5×10¹⁵ /cm² at an energy between 30 and 300 keV. Compared to the case with a single H implant, the processing involved both H and Ar implants and post-implantation annealing has created a much higher degree of surface texturing, leading to a more dramatic reduction of light reflection from polycrystalline Si films over a broadband range between 300 and 1200 nm, e.g., optical reflection from the air/Si interface in the AM1.5 sunlight condition decreasing from ~30% with an untextured surface to below 5% for a highly textured surface after post-implantation annealing at 1000°C. Formation of Ag nanostructures on these ion beam processed surfaces further reduces light reflection, and surface texturing is expected to have the benefit of diminishing light absorption losses within large-size (>100 nm) Ag nanoparticles, yielding an increased light trapping efficiency within Si as opposed to the case with Ag nanostructures on a smooth surface. A discussion of the effects of surface textures and Ag nanoparticles on light trapping within Si thin films is also presented with the aid of computer simulations.

  17. Compressive intrinsic stress originates in the grain boundaries of dense refractory polycrystalline thin films

    SciTech Connect

    Magnfält, D. Sarakinos, K.; Fillon, A.; Abadias, G.; Boyd, R. D.; Helmersson, U.

    2016-02-07

    Intrinsic stresses in vapor deposited thin films have been a topic of considerable scientific and technological interest owing to their importance for functionality and performance of thin film devices. The origin of compressive stresses typically observed during deposition of polycrystalline metal films at conditions that result in high atomic mobility has been under debate in the literature in the course of the past decades. In this study, we contribute towards resolving this debate by investigating the grain size dependence of compressive stress magnitude in dense polycrystalline Mo films grown by magnetron sputtering. Although Mo is a refractory metal and hence exhibits an intrinsically low mobility, low energy ion bombardment is used during growth to enhance atomic mobility and densify the grain boundaries. Concurrently, the lateral grain size is controlled by using appropriate seed layers on which Mo films are grown epitaxially. The combination of in situ stress monitoring with ex situ microstructural characterization reveals a strong, seemingly linear, increase of the compressive stress magnitude on the inverse grain size and thus provides evidence that compressive stress is generated in the grain boundaries of the film. These results are consistent with models suggesting that compressive stresses in metallic films deposited at high homologous temperatures are generated by atom incorporation into and densification of grain boundaries. However, the underlying mechanisms for grain boundary densification might be different from those in the present study where atomic mobility is intrinsically low.

  18. Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    1997-03-01

    Polycrystalline-thin-film thermophotovoltaic (TPV) cells have excellent potential for reducing the cost of TPV generators so as to address the hitherto inaccessible and highly competitive markets such as self-powered gas-fired residential warm air furnaces and energy-efficient electric cars, etc. Recent progress in polycrystalline-thin-film solar cells have made it possible to satisfy the diffusion length and intrinsic junction rectification criteria for TPV cells operating at high fluences. Continuous ranges of direct bandgaps of the ternary and pseudoternary compounds such as Hg1-xCdxTe, Pb1-xCdxTe, Hg1-xZnxTe, and Pb1-xZnxS cover the region of interest of 0.50-0.75 eV for efficient TPV conversion. Other ternary and pseudoternary compounds which show direct bandgaps in most of or all of the 0.50-0.75 eV range are Pb1-xZnxTe, Sn1-xCd2xTe2, Pb1-xCdxSe, Pb1-xZnxSe, and Pb1-xCdxS. Hg1-xCdxTe (with x~0.21) has been studied extensively for infrared detectors. PbTe and Pb1-xSnxTe have also been studied for infrared detectors. Not much work has been carried out on Hg1-xZnxTe thin films. Hg1-xCdxTe and Pb1-xCdxTe alloys cover a wide range of cut-off wavelengths from the far infrared to the near visible. Acceptors and donors are introduced in these materials by excess non-metal (Te) and excess metal (Hg and Pb) respectively. Extrinsic acceptor impurities are Cu, Au, and As while and In and Al are donor impurities. Hg1-xCdxTe thin films have been deposited by isothermal vapor-phase epitaxy (VPE), liquid phase epitaxy (LPE), hot-wall metalorganic chemical vapor deposition (MOCVD), electrodeposition, sputtering, molecular beam epitaxy (MBE), laser-assisted evaporation, and vacuum evaporation with or without hot-wall enclosure. The challenge in the preparation of Hg1-xCdxTe is to provide excess mercury incidence rate, to optimize the deposition parameters for enhanced mercury incorporation, and to achieve the requisite stoichiometry, grain size, and doping. MBE and MOCVD

  19. Thin film polycrystalline silicon: Promise and problems in displays and solar cells

    SciTech Connect

    Fonash, S.J.

    1995-08-01

    Thin film polycrystalline Si (poly-Si) with its carrier mobilities, potentially good stability, low intragrain defect density, compatibility with silicon processing, and ease of doping activation is an interesting material for {open_quotes}macroelectronics{close_quotes} applications such as TFTs for displays and solar cells. The poly-Si films needed for these applications can be ultra-thin-in the 500{Angstrom} to 1000{Angstrom} thickness range for flat panel display TFTs and in the 4{mu}m to 10{mu}m thickness range for solar cells. Because the films needed for these microelectronics applications can be so thin, an effective approach to producing the films is that of crystallizing a-Si precursor material. Unlike cast materials, poly-Si films made this way can be produced using low temperature processing. Unlike deposited poly-Si films, these crystallized poly-Si films can have grain widths that are much larger than the film thickness and almost atomically smooth surfaces. This thin film poly-Si crystallized from a-Si precursor films, and its promise and problems for TFTs and solar cells, is the focus of this discussion.

  20. Broadening of optical transitions in polycrystalline CdS and CdTe thin films

    SciTech Connect

    Li Jian; Chen Jie; Collins, R. W.

    2010-11-01

    The dielectric functions {epsilon} of polycrystalline CdS and CdTe thin films sputter deposited onto Si wafers were measured from 0.75 to 6.5 eV by in situ spectroscopic ellipsometry. Differences in {epsilon} due to processing variations are well understood using an excited carrier scattering model. For each sample, a carrier mean free path {lambda} is defined that is found to be inversely proportional to the broadening of each of the band structure critical points (CPs) deduced from {epsilon}. The rate at which broadening occurs with {lambda}{sup -1} is different for each CP, enabling a carrier group speed {upsilon}{sub g} to be identified for the CP. With the database for {upsilon}{sub g}, {epsilon} can be analyzed to evaluate the quality of materials used in CdS/CdTe photovoltaic heterojunctions.

  1. Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby

    DOEpatents

    Wu, Xuanzhi; Sheldon, Peter

    2000-01-01

    A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

  2. Inducing conductivity in polycrystalline ZnO1-x thin films through space charge doping

    NASA Astrophysics Data System (ADS)

    Paradisi, Andrea; Biscaras, Johan; Shukla, Abhay

    2017-09-01

    We induce ultra-high carrier charge density in polycrystalline zinc oxide thin films on glass with a thickness of few tens of nm, achieving carrier concentrations as high as 2.2 ×1014 cm-2, well beyond the Ioffe-Regel limit for an insulator-metal transition in two dimensions. The sheet resistance is consequently lowered by up to 5 orders of magnitude to about 2 k Ω/◻ without alteration of transparency thanks to our space charge doping technique. Electrostatic doping of such a large band-gap semiconductor is quite challenging, and a high surface potential is required in order to induce conductivity at the interface. Through magneto-transport measurements performed at low temperature on the doped films, we show that both weak localization and weak anti-localization of charge carriers can be observed and that these quantum interference phenomena can be modulated by the carrier concentration and temperature.

  3. Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Sreenivas Puli, Venkata; Kumar Pradhan, Dhiren; Gollapudi, Sreenivasulu; Coondoo, Indrani; Panwar, Neeraj; Adireddy, Shiva; Chrisey, Douglas B.; Katiyar, Ram S.

    2014-11-01

    Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO3 (BFO) thin films have been deposited on Pt/TiO2/SiO2/Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d33) ~94 pm/V at 0.6 MV/cm. High dielectric constant ~900 and low dielectric loss ~0.25 were observed at room temperature. M-H loops have shown relatively high saturation magnetization ~35 emu/cm3 at a maximum field of H ~20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films.

  4. Activation of ion-implanted polycrystalline silicon thin films prepared on glass substrates

    SciTech Connect

    So, Byoung-Soo; Bae, Seung-Muk; You, Yil-Hwan; Kim, Young-Hwan; Hwang, Jin-Ha

    2012-10-15

    Phosphorous-implanted polycrystalline Si thin films were subjected to thermal annealing between 300 °C and 650 °C. The thermal activation was monitored electrically and structurally using Hall measurements, Raman spectroscopy, UV–visible spectrophotometry, and transmission electron microscopy. Charge transport information was correlated to the corresponding structural evolution in thermal activation. Phosphorous-implanted activation is divided into short-range ordering at low temperatures and long-range ordering at high temperatures, with the boundary between low and high temperatures set at 425 °C. Short-range ordering allows for significant increase in electronic concentration through substitution of P for Si. Higher temperatures are attributed to long-range ordering, thereby increasing electronic mobility.

  5. Suppression of Self-Heating in Low-Temperature Polycrystalline Silicon Thin-Film Transitors

    NASA Astrophysics Data System (ADS)

    Hashimoto, Shinichiro; Uraoka, Yukiharu; Fuyuki, Takashi; Morita, Yukihiro

    2007-04-01

    We investigated the structure of low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) focusing on their immunity against thermal degradation. Their operating temperature was simply dependent on input power and independent of bias voltage, such as drain or gate bias voltage. As for the structures, self-heating was suppressed by increasing the number of splitting gates and the interval between poly-Si layers owing to effective heat diffusion along the gate width. For multi gate-type TFTs, increasing the number of splitting gates was effective in suppressing self-heating; however, increasing the interval between gates was not effective. We proposed a new offset-type structure. Using this new structure, we were able to demonstrate the effective suppression of degradation caused by self-heating.

  6. Metastable electrical characteristics of polycrystalline thin-film photovoltaic modules upon exposure and stabilization

    NASA Astrophysics Data System (ADS)

    Deline, Chris A.; del Cueto, Joseph A.; Albin, David S.; Rummel, Steve R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65°C exposed in the dark under forward bias at 65°C and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  7. Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

    SciTech Connect

    Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  8. The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

    NASA Technical Reports Server (NTRS)

    Brown, Ari David; Barrentine, Emily M.; Moseley, Samuel H.; Noroozian, Omid; Stevenson, Thomas

    2011-01-01

    Polycrystalline superconducting Nb thin films are extensively used for submillimeter and millimeter transmission line applications and, less commonly, used in microwave kinetic inductance detector (MKID) applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the x-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

  9. A multiscale coupled finite-element and phase-field framework to modeling stressed grain growth in polycrystalline thin films

    SciTech Connect

    Jamshidian, M.; Thamburaja, P.; Rabczuk, T.

    2016-12-15

    A previously-developed finite-deformation- and crystal-elasticity-based constitutive theory for stressed grain growth in cubic polycrystalline bodies has been augmented to include a description of excess surface energy and grain-growth stagnation mechanisms through the use of surface effect state variables in a thermodynamically-consistent manner. The constitutive theory was also implemented into a multiscale coupled finite-element and phase-field computational framework. With the material parameters in the constitutive theory suitably calibrated, our three-dimensional numerical simulations show that the constitutive model is able to accurately predict the experimentally-determined evolution of crystallographic texture and grain size statistics in polycrystalline copper thin films deposited on polyimide substrate and annealed at high-homologous temperatures. In particular, our numerical analyses show that the broad texture transition observed in the annealing experiments of polycrystalline thin films is caused by grain growth stagnation mechanisms. - Graphical abstract: - Highlights: • Developing a theory for stressed grain growth in polycrystalline thin films. • Implementation into a multiscale coupled finite-element and phase-field framework. • Quantitative reproduction of the experimental grain growth data by simulations. • Revealing the cause of texture transition to be due to the stagnation mechanisms.

  10. GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE.

    PubMed

    Ikejiri, Keitaro; Ishizaka, Fumiya; Tomioka, Katsuhiro; Fukui, Takashi

    2013-03-22

    The growth mechanism of GaAs nanowires (NWs) grown on polycrystalline silicon (poly-Si) thin films using selective-area metalorganic vapor-phase epitaxy was investigated. Wire structures were selectively grown in the mask openings on a poly-Si substrate. The appearance ratio of wire structures strongly depended on the growth conditions and deposition temperature of the poly-Si substrate. Evaluation of the grown shapes and growth characteristics revealed that GaAs NWs grown on a poly-Si substrate have the same growth mechanism as conventional GaAs NWs grown on a single-crystalline GaAs or Si substrate. Experiments showed that the wire structure yield can be improved by increasing the Si grain size and/or increasing the Si deposition temperature. The growth model proposed for understanding NW growth on poly-Si is based on the mask opening size, the Si grain size, and the growth conditions. The ability to control the growth mode is promising for the formation of NWs with complex structures on poly-Si thin layers.

  11. Designing novel thin film polycrystalline solar cells for high efficiency: sandwich CIGS and heterojunction perovskite

    NASA Astrophysics Data System (ADS)

    Wang, Tianyue; Chen, Jiewei; Wu, Gaoxiang; Song, Dandan; Li, Meicheng

    2017-01-01

    Heterojunction and sandwich architectures are two new-type structures with great potential for solar cells. Specifically, the heterojunction structure possesses the advantages of efficient charge separation but suffers from band offset and large interface recombination; the sandwich configuration is favorable for transferring carriers but requires complex fabrication process. Here, we have designed two thin-film polycrystalline solar cells with novel structures: sandwich CIGS and heterojunction perovskite, referring to the advantages of the architectures of sandwich perovskite (standard) and heterojunction CIGS (standard) solar cells, respectively. A reliable simulation software wxAMPS is used to investigate their inherent characteristics with variation of the thickness and doping density of absorber layer. The results reveal that sandwich CIGS solar cell is able to exhibit an optimized efficiency of 20.7%, which is much higher than the standard heterojunction CIGS structure (18.48%). The heterojunction perovskite solar cell can be more efficient employing thick and doped perovskite films (16.9%) than these typically utilizing thin and weak-doping/intrinsic perovskite films (9.6%). This concept of structure modulation proves to be useful and can be applicable for other solar cells. Project supported by the National High-Tech R&D Program of China (No. 2015AA034601), the National Natural Science Foundation of China (Nos. 91333122, 61204064, 51202067, 51372082, 51402106, 11504107), the Ph.D. Programs Foundation of Ministry of Education of China (Nos. 20120036120006, 20130036110012), the Par-Eu Scholars Program, and the Fundamental Research Funds for the Central Universities.

  12. Electrical and thermal properties of polycrystalline Si thin films with phononic crystal nanopatterning for thermoelectric applications

    SciTech Connect

    Nomura, Masahiro; Kage, Yuta; Müller, David; Moser, Dominik; Paul, Oliver

    2015-06-01

    Electrical and thermal properties of polycrystalline Si thin films with two-dimensional phononic patterning were investigated at room temperature. Electrical and thermal conductivities for the phononic crystal nanostructures with a variety of radii of the circular holes were measured to systematically investigate the impact of the nanopatterning. The concept of phonon-glass and electron-crystal is valid in the investigated electron and phonon transport systems with the neck size of 80 nm. The thermal conductivity is more sensitive than the electrical conductivity to the nanopatterning due to the longer mean free path of the thermal phonons than that of the charge carriers. The values of the figure of merit ZT were 0.065 and 0.035, and the enhancement factors were 2 and 4 for the p-doped and n-doped phononic crystals compared to the unpatterned thin films, respectively, when the characteristic size of the phononic crystal nanostructure is below 100 nm. The greater enhancement factor of ZT for the n-doped sample seems to result from the strong phonon scattering by heavy phosphorus atoms at the grain boundaries.

  13. Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films

    SciTech Connect

    Kumar, Avishek E-mail: dalapatig@imre.a-star.edu.sg; Law, Felix; Widenborg, Per I.; Dalapati, Goutam K. E-mail: dalapatig@imre.a-star.edu.sg; Subramanian, Gomathy S.; Tan, Hui R.; Aberle, Armin G.

    2014-11-01

    n-type polycrystalline silicon (poly-Si) films with very large grains, exceeding 30 μm in width, and with high Hall mobility of about 71.5 cm{sup 2}/V s are successfully prepared by the solid-phase crystallization technique on glass through the control of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The effect of this gas flow ratio on the electronic and structural quality of the n-type poly-Si thin film is systematically investigated using Hall effect measurements, Raman microscopy, and electron backscatter diffraction (EBSD), respectively. The poly-Si grains are found to be randomly oriented, whereby the average area weighted grain size is found to increase from 4.3 to 18 μm with increase of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The stress in the poly-Si thin films is found to increase above 900 MPa when the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio is increased from 0.025 to 0.45. Finally, high-resolution transmission electron microscopy, high angle annular dark field-scanning tunneling microscopy, and EBSD are used to identify the defects and dislocations caused by the stress in the fabricated poly-Si films.

  14. Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB₂ thin films

    DOE PAGES

    Tan, Teng; Wolak, M. A.; Acharya, Narendra; ...

    2015-04-01

    For potential applications in superconducting RF cavities, we have investigated the properties of polycrystalline MgB₂ films, including the thickness dependence of the lower critical field Hc₁. MgB₂ thin films were fabricated by hybrid physical-chemical vapor deposition on (0001) SiC substrate either directly (for epitaxial films) or with a MgO buffer layer (for polycrystalline films). When the film thickness decreased from 300 nm to 100 nm, Hc₁ at 5 K increased from around 600 Oe to 1880 Oe in epitaxial films and to 1520 Oe in polycrystalline films. The result is promising for using MgB₂/MgO multilayers to enhance the vortex penetrationmore » field.« less

  15. Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Titova, Lyubov V.; Cocker, Tyler L.; Xu, Sijia; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Hegmann, Frank A.

    2016-10-01

    We have used time-resolved terahertz spectroscopy to study microscopic photoconductivity and ultrafast photoexcited carrier dynamics in thin, pure, non-hydrogenated silicon films grown by molecular beam epitaxy on quartz substrates at temperatures ranging from 335 °C to 572 °C. By controlling the growth temperature, thin silicon films ranging from completely amorphous to polycrystalline with minimal amorphous phase can be achieved. Film morphology, in turn, determines its photoconductive properties: in the amorphous phase, carriers are trapped in bandtail states on sub-picosecond time scales, while the carriers excited in crystalline grains remain free for tens of picoseconds. We also find that in polycrystalline silicon the photoexcited carrier mobility is carrier-density-dependent, with higher carrier densities mitigating the effects of grain boundaries on inter-grain transport. In a film grown at the highest temperature of 572 °C, the morphology changes along the growth direction from polycrystalline with needles of single crystals in the bulk of the film to small crystallites interspersed with amorphous silicon at the top of the film. Depth profiling using different excitation wavelengths shows corresponding differences in the photoconductivity: the photoexcited carrier lifetime and mobility are higher in the first 100-150 nm from the substrate, suggesting that thinner, low-temperature grown polycrystalline silicon films are preferable for photovoltaic applications.

  16. Microstructural and Magnetic Properties of Polycrystalline and Epitaxial Permalloy (NICKEL(80) IRON(20) Multilayered Thin Films.

    NASA Astrophysics Data System (ADS)

    Hashim, Imran

    Permalloy rm (Ni_{80 }Fe_{20}) thin films are of great scientific and technological interest because of their unique soft magnetic properties, and applications to magnetic recording. Chapter 1 provides an introduction to magnetic and magnetotransport properties of rm Ni_{80}Fe_{20} thin films, and how the film microstructure affects these properties. Chapter 2 discusses the instrumentation used for thin film fabrication, and for magnetic and structural characterization. Further details of instrumentation are discussed in Appendix A. Typically, the rm Ni_{80 }Fe_{20} films for magnetoresistive applications are capped with a refractory metal thin film such as Ta to prevent its oxidation and corrosion. We investigated the interdiffusion kinetics of polycrystalline Ta/rm Ni_{80}Fe_ {20} thin films and found that for 400 <= T <= 600 ^circC, there was significant grain-boundary interdiffusion which drastically affected soft magnetic properties of rm Ni_ {80}Fe_{20}. In Chapter 3, we present details of the microstructural evolution of these multilayers and the subsequent effects on their magnetic properties. An alternate method for reducing grain-boundary scattering would be to fabricate grain-boundary free epitaxial rm Ni_{80}Fe_{20 } films. The epitaxy of rm Ni _{80}Fe_{20} on MgO, NaCl and Cu had been demonstrated by investigators as early as the 60s. However, none of these substrates are available with as good atomic flatness as Si wafers. Following reports of epitaxial growth of Cu on Si, we proposed using it as a seed layer for growing rm Ni_ {80}Fe_{20} epitaxially on Si. However, there were conflicting reports of Cu epitaxy on Si, as some investigators claimed that Cu epitaxy on Si in UHV was not possible. We were able to resolve some of these controversies (see Chapter 4 for details) and thus fabricate epitaxial rm Ni_{80 }Fe_{20} films on Cu/Si. Chapter 5 examines the effect of the lattice mismatch between Cu and rm Ni_{80}Fe _{20} and the subsequent strain, on

  17. Synthesis and characterization of polycrystalline semiconductor Caesium-Tin tri-Iodide thin-films

    NASA Astrophysics Data System (ADS)

    Chen, Zhuo

    This thesis deals with a virtually unexplored semiconductor material CsSnI3 from material synthesis, structural, optical, and electrical characterization to the fabrication and validation of CsSnI3 thin-film solar cells. We started with synthesizing CsSnI3 thin films based on CsI and SnCl2 (or SnI2) by using an apparatus which consists of e-beam and thermal evaporators. The quality of polycrystalline CsSnI3 thin-films were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). Experimental data on XRD and electron diffraction patterns taking from the synthesized thin-films match very well to the theoretically calculated ones based the first principles calculations, confirming that the synthesized CsSnI3 thin-films have an orthorhombic crystal structure. With the well-defined crystal structure, we theoretically studied the electronic band structure of CsSnI3. Extensive optical characterizations of CsSnI3 thin-films were then carried out revealing many extraordinary properties such as 1) direct band gap energy of 1.32 eV at 300 K with its abnormal temperature dependence, 2) extremely high photoluminescence quantum yield, 3) large exciton binding energy, and 4) strong two-phonon assisted excitonic absorption near band edge. These properties are interpreted in terms of the unique electronic and structural properties of CsSnI3. The value of 1.3 eV for the energy band gap of CsSnI3 suggests a unique application of CsSnI3 thin-films on solar cells. This is because this value is right in the small range of the optimal band gaps for the Shockley-Queisser maximum efficiency limit of a single-junction solar cell. A prototype Schottky solar cell was designed, fabricated, and validated. The measured power conversion efficiency (PCE) is 0.9 % which is presently limited by the series and shunt resistance. The improvement strategy on PCE is given at the end of my thesis. In order to make the CsSnI3 thin-film solar cells

  18. Recovery Act : Near-Single-Crystalline Photovoltaic Thin Films on Polycrystalline, Flexible Substrates

    SciTech Connect

    Venkat Selvamanickam; Alex Freundlich

    2010-11-29

    III-V photovoltaics have exhibited efficiencies above 40%, but have found only a limited use because of the high cost of single crystal substrates. At the other end of the spectrum, polycrystalline and amorphous thin film solar cells offer the advantage of low-cost fabrication, but have not yielded high efficiencies. Our program is based on single-crystalline-like thin film photovoltaics on polycrystalline substrates using biaxially-textured templates made by Ion Beam-Assisted Deposition (IBAD). MgO templates made by IBAD on flexible metal substrate have been successfully used for epitaxial growth of germanium films. In spite of a 4.5% lattice mismatch, heteroepitaxial growth of Ge was achieved on CeO2 that was grown on IBAD MgO template. Room temperature optical bandgap of the Ge films was identified at 0.67 eV indicating minimal residual strain. Refraction index and extinction coefficient values of the Ge films were found to match well with that measured from a reference Ge single crystal. GaAs has been successfully grown epitaxially on Ge on metal substrate by molecular beam epitaxy. RHEED patterns indicate self annihilation of antiphase boundaries and the growth of a single domain GaAs. The GaAs is found to exhibit strong photoluminescence signal and, an existence of a relatively narrow (FWHM~20 meV) band-edge excitons measured in this film indicates a good optoelectronic quality of deposited GaAs. While excellent epitaxial growth has been achieved in GaAs on flexible metal substrates, the defect density of the films as measured by High Resolution X-ray Diffraction and etch pit experiments showed a high value of 5 * 10^8 per cm^2. Cross sectional transmission electron microscopy of the multilayer architecture showed concentration of threading dislocations near the germanium-ceria interface. The defect density was found decrease as the Ge films were made thicker. The defects appear to originate from the MgO layer presumably because of large lattice mismatches

  19. Scaling behavior of moisture-induced grain degradation in polycrystalline hybrid perovskite thin films

    SciTech Connect

    Wang, Qi; Chen, Bo; Liu, Ye; Deng, Yehao; Bai, Yang; Dong, Qingfeng; Huang, Jinsong

    2017-01-01

    The stability of perovskite solar cells has shown a huge variation with respect to the film process and film morphology, while the underlining mechanism for the morphology-dependent degradation of the perovskite film has remained elusive. Herein, we report a scaling behavior of moisture-induced grain degradation in polycrystalline CH3NH3PbI3 films. The degradation rates of CH3NH3PbI3 films in moisture were shown to be sensitive to the grain sizes. The duration that was needed for different films to degrade by the same percent showed a linear relationship with the grain size, despite the fact that the films were formed by five different deposition methods. This scaling behavior can be explained by the degradation along the in-plane direction, which is initiated at the grain boundary (GB). The GBs of CH3NH3PbI3 films consist of an amorphous intergranular layer, which allows quick diffusion of moisture into the perovskite films. It was found that thermal annealing induced surface self-passivation plays a critical role in stabilizing the surfaces of thin films and single crystals by reducing the moisture-sensitive methylammonium ions at the surface. Finally, the determination of the scaling behavior of grain degradation highlights the importance of stabilizing the GBs to improve the stability of perovskite solar cells.

  20. Scaling behavior of moisture-induced grain degradation in polycrystalline hybrid perovskite thin films

    DOE PAGES

    Wang, Qi; Chen, Bo; Liu, Ye; ...

    2017-01-01

    The stability of perovskite solar cells has shown a huge variation with respect to the film process and film morphology, while the underlining mechanism for the morphology-dependent degradation of the perovskite film has remained elusive. Herein, we report a scaling behavior of moisture-induced grain degradation in polycrystalline CH3NH3PbI3 films. The degradation rates of CH3NH3PbI3 films in moisture were shown to be sensitive to the grain sizes. The duration that was needed for different films to degrade by the same percent showed a linear relationship with the grain size, despite the fact that the films were formed by five different depositionmore » methods. This scaling behavior can be explained by the degradation along the in-plane direction, which is initiated at the grain boundary (GB). The GBs of CH3NH3PbI3 films consist of an amorphous intergranular layer, which allows quick diffusion of moisture into the perovskite films. It was found that thermal annealing induced surface self-passivation plays a critical role in stabilizing the surfaces of thin films and single crystals by reducing the moisture-sensitive methylammonium ions at the surface. Finally, the determination of the scaling behavior of grain degradation highlights the importance of stabilizing the GBs to improve the stability of perovskite solar cells.« less

  1. POLYCRYSTALLINE THIN FILM SOLAR CELLS:Present Status and Future Potential

    NASA Astrophysics Data System (ADS)

    Birkmire, Robert W.; Eser, Erten

    1997-08-01

    Polycrystalline thin film solar cells on copper indium diselenide (CulnSe2) and its alloys and cadmium telluride (CdTe) appear to be the most promising candidates for large-scale application of photovoltaic energy conversion because they have shown laboratory-efficiences in excess of 15%. Heterojunction devices with n-type cadmium sulfide (CdS) films show very low minority carrier recombination at the absorber grain boundaries and at the metallurgical interface, which results in high quantum efficiences. Open circuit voltages of these devices are relatively low owing to the recombination in the space charge region in the absorber. Further improvements in efficiency can be achieved by reducing the recombination current, especially in devices based on CulnSe2 and its alloys. Low-cost manufacturing of modules requires better resolution of a number of other technical issues. For modules based on CulnSe2 and its alloys, the role of Na and higher deposition rates on device performance need to be better understood. In addition, replacing the chemical bath deposition method for CdS film deposition with an equally effective, but more environmentally acceptable process is needed. For modules based on CdTe, more fundamental understanding of the effect of chloride/oxygen treatment and the development of more reproducible and manufacturable CdTe contacting schemes are necessary.

  2. Local impedance imaging of boron-doped polycrystalline diamond thin films

    SciTech Connect

    Zieliński, A.; Ryl, J.; Burczyk, L.; Darowicki, K.

    2014-09-29

    Local impedance imaging (LII) was used to visualise surficial deviations of AC impedances in polycrystalline boron-doped diamond (BDD). The BDD thin film electrodes were deposited onto the highly doped silicon substrates via microwave plasma-enhanced CVD. The studied boron dopant concentrations, controlled by the [B]/[C] ratio in plasma, ranged from 1 × 10{sup 16} to 2 × 10{sup 21} atoms cm{sup −3}. The BDD films displayed microcrystalline structure, while the average size of crystallites decreased from 1 to 0.7 μm with increasing [B]/[C] ratios. The application of LII enabled a direct and high-resolution investigation of local distribution of impedance characteristics within the individual grains of BDD. Such an approach resulted in greater understanding of the microstructural control of properties at the grain level. We propose that the obtained surficial variation of impedance is correlated to the areas of high conductance which have been observed at the grain boundaries by using LII. We also postulate that the origin of high conductivity is due to either preferential boron accumulation, the presence of defects, or sp{sup 2} regions in the intragrain regions. The impedance modulus recorded by LII was in full agreement with the bulk impedance measurements. Both variables showed a decreasing trend with increasing [B]/[C] ratios, which is consistent with higher boron incorporation into BDD film.

  3. On-Current Modeling of Polycrystalline Silicon Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Gupta, Navneet; Tyagi, B. P.

    2005-01-01

    We propose an on-current (above threshold voltage) model of polycrystalline silicon thin-film transistors (poly-Si TFTs). The model includes the study of the effect of trap state density, poly-Si inversion layer thickness and temperature on the TFT characteristics. Effective carrier mobility and I-V characteristics are described by considering the mechanism of capture and release of carriers at grain boundary trap states and the thermionic emission theory. It is found that at low as well as at high doping concentrations, the effective carrier mobility (µeff) increases with increasing temperature whereas a dip is observed at intermediate doping concentration. At very high and very low doping concentration the effect of temperature on the mobility is found to be almost negligible. Calculations reveal that effective carrier mobility and drain current increase as the gate bias increases and are larger for a lower trap state density. The calculated value of activation energy decreases as the gate bias increases and is larger for a larger poly-Si inversion layer thickness. A comparison between the present predictions and the experimental results shows reasonably good agreement.

  4. Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors

    NASA Astrophysics Data System (ADS)

    Liu, Kai; Liu, Yuan; Liu, Yu-Rong; En, Yun-Fei; Li, Bin

    2017-07-01

    Channel mobility in the p-type polycrystalline silicon thin film transistors (poly-Si TFTs) is extracted using Hoffman method, linear region transconductance method and multi-frequency C-V method. Due to the non-negligible errors when neglecting the dependence of gate-source voltage on the effective mobility, the extracted mobility results are overestimated using linear region transconductance method and Hoffman method, especially in the lower gate-source voltage region. By considering of the distribution of localized states in the band-gap, the frequency independent capacitance due to localized charges in the sub-gap states and due to channel free electron charges in the conduction band were extracted using multi-frequency C-V method. Therefore, channel mobility was extracted accurately based on the charge transport theory. In addition, the effect of electrical field dependent mobility degradation was also considered in the higher gate-source voltage region. In the end, the extracted mobility results in the poly-Si TFTs using these three methods are compared and analyzed.

  5. Reactive sputtering of YBaCuO thin films on polycrystalline zirconia substrates: optimization results

    NASA Astrophysics Data System (ADS)

    Degardin, A.; Bodin, C.; Dolin, C.; Kreisler, A.

    1998-01-01

    In situ elaboration of YBaCuO thin films, on polycrystalline yttria doped zirconia substrates, has been optimized. A reactive sputtering model has been developed and the electrical conductivity of the substrate has been studied as a function of temperature and doping. The J_c value of ≈ 3× 10^4~A/cm^2 at 77 K, measured on microbridges, is among the best reported in the literature for this substrate type. L'élaboration in situ de films minces d'YBaCuO, sur substrats de zircone polycristalline dopée à l'oxyde d'yttrium, a été optimisée en développant un modèle de pulvérisation réactive et en étudiant la conductivité électrique du substrat en fonction du dopage et de la température. La valeur de J_c ≈ 3× 10^4 ~A/cm^2 à 77 K, mesurée sur microponts, se situe parmi les meilleures citées dans la littérature pour ce type de substrat.

  6. Local impedance imaging of boron-doped polycrystalline diamond thin films

    NASA Astrophysics Data System (ADS)

    Zieliński, A.; Bogdanowicz, R.; Ryl, J.; Burczyk, L.; Darowicki, K.

    2014-09-01

    Local impedance imaging (LII) was used to visualise surficial deviations of AC impedances in polycrystalline boron-doped diamond (BDD). The BDD thin film electrodes were deposited onto the highly doped silicon substrates via microwave plasma-enhanced CVD. The studied boron dopant concentrations, controlled by the [B]/[C] ratio in plasma, ranged from 1 × 1016 to 2 × 1021 atoms cm-3. The BDD films displayed microcrystalline structure, while the average size of crystallites decreased from 1 to 0.7 μm with increasing [B]/[C] ratios. The application of LII enabled a direct and high-resolution investigation of local distribution of impedance characteristics within the individual grains of BDD. Such an approach resulted in greater understanding of the microstructural control of properties at the grain level. We propose that the obtained surficial variation of impedance is correlated to the areas of high conductance which have been observed at the grain boundaries by using LII. We also postulate that the origin of high conductivity is due to either preferential boron accumulation, the presence of defects, or sp2 regions in the intragrain regions. The impedance modulus recorded by LII was in full agreement with the bulk impedance measurements. Both variables showed a decreasing trend with increasing [B]/[C] ratios, which is consistent with higher boron incorporation into BDD film.

  7. Local electrical conduction in polycrystalline La-doped BiFeO₃ thin films.

    PubMed

    Zhou, Ming-Xiu; Chen, Bo; Sun, Hai-Bin; Wan, Jian-Guo; Li, Zi-Wei; Liu, Jun-Ming; Song, Feng-Qi; Wang, Guang-Hou

    2013-06-07

    Local electrical conduction behaviors of polycrystalline La-doped BiFeO3 thin films have been investigated by combining conductive atomic force microscopy and piezoelectric force microscopy. Nanoscale current measurements were performed as a function of bias voltage for different crystal grains. Completely distinct conducting processes and resistive switching effects were observed in the grain boundary and grain interior. We have revealed that local electric conduction in a grain is dominated by both the grain boundary and ferroelectric domain, and is closely related to the applied electric field and the as-grown state of the grain. At lower voltages the electrical conduction is dominated by the grain boundary and is associated with the redistribution of oxygen vacancies in the grain boundary under external electric fields. At higher voltages both the grain boundary and ferroelectric domain are responsible for the electrical conduction of grains, and the electrical conduction gradually extends from the grain boundary into the grain interior due to the extension of the ferroelectric domain towards the grain interior. We have also demonstrated that the conduction dominated by the grain boundary exhibits a much small switching voltage, while the conduction of the ferroelectric domain causes a much high switching voltage in the grain interior.

  8. Polycrystalline Ni thin films on nanopatterned Si substrates: From highly conformal to nonconformal anisotropic growth

    NASA Astrophysics Data System (ADS)

    Keller, Adrian; Peverini, Luca; Grenzer, Jörg; Kovacs, György J.; Mücklich, Arndt; Facsko, Stefan

    2011-07-01

    The growth of polycrystalline Ni thin films on nanorippled Si templates is investigated in situ by grazing incidence small angle x-ray scattering as well as ex situ by atomic force microscopy and cross-sectional transmission electron microscopy. The templates have been fabricated by low-energy ion sputtering which leads to the spontaneous formation of a periodic ripple pattern with about 35 nm periodicity and about 3 nm peak-to-peak height. Highly conformal growth of the Ni film is observed under normal incidence deposition with the film surface perfectly replicating the substrate morphology up to a film thickness of at least 120 nm. Grazing incidence deposition perpendicular to the ripple orientation leads to the formation of one-dimensional nanowires on one side of the ripples due to geometrical shadowing. At a film thickness of about 10 nm, a transition to anisotropic columnar growth with rapidly decreasing conformity is observed. In this regime, the nanowires act as growth seeds for the columns and further geometrical shadowing leads to a film consisting of rows of tilted columns.

  9. Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures.

    PubMed

    Antonuk, L E; Koniczek, M; McDonald, J; El-Mohri, Y; Zhao, Q; Behravan, M

    2008-01-01

    An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring how the 1/f, shot and thermal noise components of poly-Si TFTs, determined from current noise power spectral density measurements, as well as through calculation, can be used to assist in the development of imagers incorporating pixel amplification circuits based on such transistors.

  10. Buffer layers for deposition of superconducting YBaCuO thin film on polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Beetz, Charles P.; Cui, G. J.; Lincoln, B. A.; Kirlin, Peter S.

    1992-09-01

    In an attempt to combine the properties of high temperature superconductors with the high thermal conductivity and low specific heat of diamond, we have explored the deposition of in- situ YBa(subscript 2)Cu(subscript 3)O(subscript 7-(delta) ) (YBCO) superconducting films on polycrystalline diamond thin films. We demonstrate for the first time superconducting YBCO films on diamond employing multiple layer buffer layer systems. Three different composite buffer layer systems were explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si(subscript 3)N(subscript 4)/YSZ/YBCO, and (3) Diamond/SiO(subscript 2)/YSZ/YBCO. Adherent thin Zr films were deposited by dc sputtering on the diamond films at 450 to 820 degree(s)C. The yttria stabilized zirconia (YSZ) was deposited by reactive RF sputtering at 680 to 750 degree(s)C. The Si(subscript 3)N(subscript 4) and SiO(subscript 2) were also deposited by on-axis RF sputtering at 400 to 700 degree(s)C. YBCO films were grown on the buffer layers by off-axis RF sputtering at substrate temperatures between 690 degree(s)C and 750 degree(s)C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric far IR detectors and paves the way for the use of HTSC as a high frequency interconnect metallization on thick diamond film based multichip modules.

  11. X-ray microbeam diffraction study of strain in polycrystalline aluminum thin films

    NASA Astrophysics Data System (ADS)

    Moyer, Laura E.

    Thermally induced strains in polycrystalline Al films on glass and single crystal Si substrates have been examined on a grain-by-grain basis by x-ray microbeam diffraction. The crystallographic orientation and the deviatoric strain tensor, epsilon*ij, were determined for each measurement location by white beam Laue diffraction. From grain orientation mapping and strain tensor measurements, information was obtained about the distributions of strains for similarly oriented grains and about strain variations within single grains. Grain size, texture, and misorientation correlations with residual strains were also examined. Strains during thermal cycling and strain relaxation at room temperature were compared to model calculations. The mechanisms involved in these calculations during thermal cycling and during room temperature relaxation were studied. The grain boundary diffusivity for Coble creep used in the model calculations was also studied and recalculations were made that provide a better fit of the model calculations to the experimental data. The type of information gathered in this study may be useful in developing and testing theories for intergrain effects in strain evolution in polycrystals. It was concluded from this study that many factors affect the mechanical behavior of thin films during thermal cycling and during room temperature relaxation, including grain size, texture, and grain orientation. The nature of the film-substrate interface may also affect the behavior of the films. The model calculations and parameters used in this study were not successful in predicting quantitatively thin film mechanical behavior. Microdiffraction measurements reveal that the strains on the inter- and intra-granular level are very different than the average strain in a film.

  12. Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

    NASA Astrophysics Data System (ADS)

    Bhopal, Muhammad Fahad; Lee, Doo Won; Lee, Soo Hong

    2016-09-01

    Thin-film polycrystalline silicon ( pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm-1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

  13. Ferroelectric and structural properties of stress-constrained and stress-relaxed polycrystalline BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Nakashima, Seiji; Ricinschi, Dan; Park, Jung Min; Kanashima, Takeshi; Fujisawa, Hironori; Shimizu, Masaru; Okuyama, Masanori

    2009-03-01

    The stress influence of the structural and ferroelectric properties of polycrystalline BiFeO3 (BFO) thin films has been investigated using a membrane substrate for relaxing stress. Reciprocal space mapping (RSM) measurement has been performed to confirm the stress dependence of the crystal structure of polycrystalline BFO thin films on the Pt (200 nm)/TiO2 (50 nm)/SiO2 (600 nm)/Si (625 μm) substrate (stress-constrained BFO film) and the Pt (200 nm)/TiO2 (50 nm)/SiO2 (600 nm)/Si (15 μm) membrane substrate (stress-relaxed BFO film). The BFO thin films prepared by pulsed laser deposition were polycrystalline and mainly exhibit a texture with (001) and (110) plane orientations. From the RSM results, the crystal structure of the (001)-oriented domain changes from Pm monoclinic to Cm monoclinic or to R3c rhombohedral due to stress relaxation. Moreover, at room temperature as well as at 150 K, remanent polarization (Pr) increases and double coercive field (2Ec) decreases (in the latter case from 88 to 94 μC/cm2 and from 532 to 457 kV/cm, respectively) due to relaxing stress. The enhancement of ferroelectricity is attributed to the crystal structural deformation and/or transition and angle change between the polarization direction and film plane.

  14. Polycrystalline silicon thin films by metal-induced growth: Formation mechanisms, characterization and applications

    NASA Astrophysics Data System (ADS)

    Guliants, Elena A.

    2000-10-01

    A method of producing a polycrystalline silicon thin film on a foreign substrate without subsequent annealing has been developed. Thermally evaporated 5--100nm thick Ni films served as prelayers for magnetron sputtered 0.5--2mum thick Si films. A continuous, uniform film was obtained as a result of metal induced growth (MIG) of polysilicon during low temperature (below 600°C) deposition. The interaction of a fine-grained metallic Ni with an atomic Si provided by a sputtering gun results in the formation of NiSi2 at the Ni-Si interface. The Ni disilicide provides the nucleation sites for the epitaxial Si crystal growth due to only 0.4% lattice mismatch with Si. As a result, the polycrystalline silicon film exhibits a columnar structure with length of the grains equal to the film thickness and cross-sectional diameter of up to 600nm. The Ni prelayer thickness is found to appreciably influence both the Si grain size and resistivity. The best results were obtained for the films deposited on a 25nm thick Ni prelayer. These films show the resistivity values of 2--3 x 103O-cm and an activation energy of 0.02--0.03eV. The carrier concentrations are 5 x 1015 cm-3 and 3 x 1016 cm-3 for n-type and p-type films, respectively. The carrier mobility computed for n and p-type polysilicon films has respective values of 0.4 cm2/V-s and 1.6 cm2/V-s. The carrier lifetime of ˜11mus and the diffusion length of ˜3.4 mum indicated good electrical properties which make the film potentially applicable to fabrication of various microelectronic devices, where Ni silicide at the bottom of the film provides a satisfactory back ohmic contact. The Schottky diodes fabricated on the basis of the MIG-Si films of both n and p-types show a rectifying ratio of up to 107. A 1mum thick p-n junction diode reveals the dark IF/IR ratio of 104 and a reasonable value of photocurrent. In addition, the polysilicon properties are not strongly affected by a substrate when the latter is relatively smooth and

  15. Polycrystalline silicon thin-film solar cells with plasmonic-enhanced light-trapping.

    PubMed

    Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

    2012-07-02

    One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach. The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles. To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm(2), which can be increased up to 17-18 mA/cm(2) (~25% higher) after application of a simple diffuse back reflector made of a white paint. To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing

  16. Fabrication and characterization of low temperature polycrystalline silicon thin film transistors

    NASA Astrophysics Data System (ADS)

    Krishnan, Anand Thiruvengadathan

    2000-10-01

    The proliferation of devices with built-in displays, such as personal digital assistants and cellular phones has created a demand for rugged light-weight displays. Polymeric substrates could be suited for these applications, and they offer the possibility of flexible displays also. However, driver circuitry needs to be integrated in the display if the cost is to be reduced. Low temperature (<350°C) polycrystalline silicon (poly-Si) thin film transistors, if developed, offer driver circuitry integration during pixel transistor fabrication on top of flexible substrates. This thesis addresses several issues related to the fabrication of thin film transistors at low temperatures on glass substrates. A high-density plasma (electron cyclotron resonance (ECR)) based approach was adopted for deposition of thin films. A process for deposition of n-type doped silicon (n-type doped Si) at T < 350°C and having resistivity <1 ohm/cm has been developed. Intrinsic poly-Si was deposited under different conditions of microwave power, RF bias and deposition times. The properties of n-type doped Si and intrinsic poly-Si were correlated with the structure and the deposition conditions. A novel TFT structure has been proposed and implemented in this work. This top gate TFT structure uses n-type doped Si and utilizes only two masks and one alignment step. There are no critical etch steps and good interface quality could be obtained even without post-processing hydrogenation as the poly-Si surface was not exposed to air before deposition of the gate dielectric. TFTs using this top gate structure were fabricated with no process step exceeding 340°C electrode temperature (surface temperature <300°C). These TFTs show ON/OFF ratios in excess of 105. Their sub-threshold swing is ˜0.5 V/decade and mobility is 1--10 cm2/V-s. Several TFTs were also fabricated using alternative dielectrics such as oxide deposited from tetramethyl silane in an RFPECVD chamber and silicon nitride deposited in

  17. Characterization of polycrystalline VO2 thin film with low phase transition temperature fabricated by high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Tiegui; Wang, Langping; Wang, Xiaofeng; Zhang, Yufen

    2016-04-01

    VO2 is a unique material that undergoes a reversible phase transformation around 68∘C. Currently, applications of VO2 on smart windows are limited by its high transition temperature. In order to reduce the temperature, VO2 thin film was fabricated on quartz glass substrate by high power impulse magnetron sputtering with a modulated pulsed power. The phase transition temperature has been reduced to as low as 32∘C. In addition, the VO2 film possesses a typical metal-insulator transition. X-ray diffraction and selected area electron diffraction patterns reveal that an obvious lattice distortion has been formed in the as-deposited polycrystalline VO2 thin film. X-ray photoelectron spectroscopy proves that oxygen vacancies have been formed in the as-deposited thin film, which will induce a lattice distortion in the VO2 thin film.

  18. Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

    NASA Astrophysics Data System (ADS)

    Ojo, A. A.; Dharmadasa, I. M.

    2017-08-01

    Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

  19. Height-resolved quantification of microstructure and texture in polycrystalline thin films using TEM orientation mapping.

    PubMed

    Aebersold, A Brian; Alexander, Duncan T L; Hébert, Cécile

    2015-12-01

    A method is presented for the quantitative investigation of microstructure and texture evolution in polycrystalline thin films based on in-plane automated crystal orientation mapping in transmission electron microscopy, from the substrate up. To demonstrate the method we apply it to the example of low pressure metal-organic chemical vapor deposited ZnO layers. First, orientation mapping is applied to standard cross-section and plan-view transmission electron microscopy samples of films, illustrating how plan-view samples both reduce the occurrence of grain overlap that is detrimental to reliable orientation mapping and also improve sampling statistics compared to cross-sections. Motivated by this, orientation mapping has been combined with a double-wedge method for specimen preparation developed by Spiecker et al. (2007) [1], which creates a large area plan-view sample that traverses the film thickness. By measuring >10,000 grains in the film, the resulting data give access to grain size, orientation and misorientation distributions in function of height above the substrate within the film, which are, in turn, the inputs necessary for quantitative assessment of growth models and simulations. The orientation data are directly related to microstructural images, allowing correlation of orientations with in-plane and out-of-plane grain sizes and shapes. The spatial correlation of the entire data set gives insights into previously unnoticed growth mechanisms such as the presence of renucleation or preferred misorientations. Finally, the data set can be used to guide targeted, local studies by other transmission electron microscopy techniques. This is demonstrated by the site-specific application of nano-beam diffraction to validate the presence of coherent [21̄1̄0]/(011̄3) twin boundaries first suggested by the orientation mapping.

  20. Influence of thickness on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Dhaka, M. S.

    2016-02-01

    This paper presents the influence of thickness on physical properties of polycrystalline CdTe thin films. The thin films of thickness 450 nm, 650 nm and 850 nm were deposited employing thermal vacuum evaporation technique on glass and indium tin oxide (ITO) coated glass substrates. The physical properties of these as-grown thin films were investigated employing the X-ray diffraction (XRD), source meter, UV-Vis spectrophotometer, scanning electron microscopy (SEM) coupled with energy dispersive spectroscopy (EDS). The structural analysis reveals that the films have zinc-blende cubic structure and polycrystalline in nature with preferred orientation (111). The structural parameters like lattice constant, interplanar spacing, grain size, strain, dislocation density and number of crystallites per unit area are calculated. The average grain size and optical band gap are found in the range 15.16-21.22 nm and 1.44-1.63 eV respectively and observed to decrease with thickness. The current-voltage characteristics show that the electrical conductivity is observed to decrease with thickness. The surface morphology shows that films are free from crystal defects like pin holes and voids as well as homogeneous and uniform. The EDS patterns show the presence of cadmium and tellurium elements in the as grown films. The experimental results reveal that the film thickness plays significant role on the physical properties of as-grown CdTe thin films and higher thickness may be used as absorber layer to solar cells applications.

  1. Organic solar cells based on liquid crystalline and polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Yoo, Seunghyup

    This dissertation describes the study of organic thin-film solar cells in pursuit of affordable, renewable, and environmentally-friendly energy sources. Particular emphasis is given to the molecular ordering found in liquid crystalline or polycrystalline films as a way to leverage the efficiencies of these types of cells. Maximum efficiencies estimated based on excitonic character of organic solar cells show power conversion efficiencies larger than 10% are possible in principle. However, their performance is often limited due to small exciton diffusion lengths and poor transport properties which may be attributed to the amorphous nature of most organic semiconductors. Discotic liquid crystal (DLC) copper phthalocyanine was investigated as an easily processible building block for solar cells in which ordered molecular arrangements are enabled by a self-organization in its mesophases. An increase in photocurrent and a reduction in series resistance have been observed in a cell which underwent an annealing process. X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements suggest that structural and morphological changes induced after the annealing process are related to these improvements. In an alternative approach, p-type pentacene thin films prepared by physical vapor deposition were incorporated into heterojunction solar cells with C60 as n-type layers. Power conversion efficiencies of 2.7% under broadband illumination (350--900 nm) with a peak external quantum efficiency of 58% have been achieved with the broad spectral coverage across the visible spectrum. Analysis using an exciton diffusion model shows this efficient carrier generation is mainly due to the large exciton diffusion length of pentacene films. Joint XRD and AFM studies reveal that the highly crystalline nature of pentacene films can account for the observed large exciton diffusion length. In addition, the electrical characteristics are studied as a function of light intensity using

  2. Structural and electrical properties of polycrystalline Bi(Fe0.6Mn0.4)O3 thin films

    NASA Astrophysics Data System (ADS)

    Kim, S. W.; Kim, W. J.; Lee, M. H.; Song, T. K.; Do, D.

    2013-12-01

    A 40% Mn-substituted BiFeO3 (BFMO) thin film was deposited on a Pt(111)/Ti/SiO2/Si(100) substrate by using a pulsed laser deposition method. The coexistence of rhombohedral and orthorhombic structures in the BFMO thin film was confirmed by using X-ray diffraction and Raman spectra investigation. The leakage current density of the BFMO thin film was larger than that of a pure polycrystalline BiFeO3 (BFO) thin film. In order to understand the leakage current behaviors, was investigated the leakage current mechanisms. The leakage current mechanism of the BFO thin film was found to be space-charge-limited conduction (SCLC), followed by trap-filled conduction causal by the increasing electric field strength. On the other hand, trap-filled conduction was not observed in the BFMO thin film. A leaky ferroelectric hysteresis loop was observed in the BFMO thin film, but not in the BFO thin film.

  3. Investigation of Melting and Solidification of Thin Polycrystalline Silicon Films via Mixed-Phase Solidification

    NASA Astrophysics Data System (ADS)

    Wang, Ying

    Melting and solidification constitute the fundamental pathways through which a thin-film material is processed in many beam-induced crystallization methods. In this thesis, we investigate and leverage a specific beam-induced, melt-mediated crystallization approach, referred to as Mixed-Phase Solidification (MPS), to examine and scrutinize how a polycrystalline Si film undergoes the process of melting and solidification. On the one hand, we develop a more general understanding as to how such transformations can transpire in polycrystalline films. On the other hand, by investigating how the microstructure evolution is affected by the thermodynamic properties of the system, we experimentally reveal, by examining the solidified microstructure, fundamental information about such properties (i.e., the anisotropy in interfacial free energy). Specifically, the thesis consists of two primary parts: (1) conducting a thorough and extensive investigation of the MPS process itself, which includes a detailed characterization and analysis of the microstructure evolution of the film as it undergoes MPS cycles, along with additional development and refinement of a previously proposed thermodynamic model to describe the MPS melting-and-solidification process; and (2) performing MPS-based experiments that were systematically designed to reveal more information on the anisotropic nature of Si-SiO2 interfacial energy (i.e., sigma Si-SiO2). MPS is a recently developed radiative-beam-based crystallization technique capable of generating Si films with a combination of several sought-after microstructural characteristics. It was conceived, developed, and characterized within our laser crystallization laboratory at Columbia University. A preliminary thermodynamic model was also previously proposed to describe the overall melting and solidification behavior of a polycrystalline Si film during an MPS cycle, wherein the grain-orientation-dependent solid-liquid interface velocity is identified

  4. Mechanical properties of free-standing polycrystalline metallic thin films and multilayers

    NASA Astrophysics Data System (ADS)

    Huang, Haibo

    1998-11-01

    A laser-diffraction tensile tester and a balance-beam creep apparatus were improved and applied to the study of free standing polycrystalline thin films with a strong $ texture. Studied are electron beam deposited Ag, Cu, Al films, and Ag/Cu multilayers consisting of alternating Ag and Cu layers with 1:1 thickness ratio. All films have a total thickness around 3 mum. In tensile testing, a thin polymeric two-dimensional diffraction grid was deposited on the film surface by microlithographic techniques. Local strains were measured from the relative displacements of two diffracted laser spots. This allows determination of Young's modulus, Poisson's ratio and, since large strains can be measured, the yield stress, ultimate tensile strength and fracture strain. The average values of the Young moduli and Poisson ratios, determined from hundreds of measurements, are 63 GPa and 0.42 for Ag, 102 GPa and 0.37 for Cu, 57 GPa and 0.41 for Al, and 87.5 GPa and 0.38 for Ag/Cu multilayers. In all cases, the Young moduli are about 20% lower than the values calculated from the literature data and are independent of the bilayer repeat length, λ , in the Ag/Cu multilayers. No "supermodulus" effect was observed at small values of λ . An anelastic model was proposed to explain the low Young moduli, the hysteresis loops on the stress-strain curves, and a 4.3 pm 0.2 GPa/decade strain rate dependence of the Young modulus in Al. The ductility of the Ag/Cu multilayers decreases when λ is reduced. For λ 80 nm, the yield stress increases linearly with λsp{{-}alpha} where alpha = 0.244. The results are compared to the predictions of Hall-Petch-type models. In creep testing, steady-state creep rates were measured on Cu films as a function of stress and temperature. In the high temperature-low stress region (100-650spcircC, 5-90 MPa), the creep rate is described by dot\\varepsilon =A{\\cdot}sigmasp{n} exp\\{{-}Q/kT\\}. A core-diffusion controlled dislocation climb model was proposed to

  5. Effect of nickel silicide gettering on metal-induced crystallized polycrystalline-silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Lee, Yong Hee; Joo, Seung Ki

    2017-06-01

    Low-temperature polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated via metal-induced crystallization (MIC) are attractive candidates for use in active-matrix flat-panel displays. However, these exhibit a large leakage current due to the nickel silicide being trapped at the grain boundaries of the poly-Si. We reduced the leakage current of the MIC poly-Si TFTs by developing a gettering method to remove the Ni impurities using a Si getter layer and natively-formed SiO2 as the etch stop interlayer. The Ni trap state density (Nt) in the MIC poly-Si film decreased after the Ni silicide gettering, and as a result, the leakage current of the MIC poly-Si TFTs decreased. Furthermore, the leakage current of MIC poly-Si TFTs gradually decreased with additional gettering. To explain the gettering effect on MIC poly-Si TFTs, we suggest an appropriate model. He received the B.S. degree in School of Advanced Materials Engineering from Kookmin University, Seoul, South Korea in 2012, and the M.S. degree in Department of Materials Science and Engineering from Seoul National University, Seoul, South Korea in 2014. He is currently pursuing the Ph.D. degree with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and top-gate polycrystalline-silicon thin-film transistors. He received the M.S. degree in innovation technology from Ecol Polytechnique, Palaiseau, France in 2013. He is currently pursuing the Ph.D. degree with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and bottom-gate polycrystalline-silicon thin-film transistors. He is currently pursuing the integrated M.S and Ph.D course with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and copper

  6. Impact of annealing on physical properties of e-beam evaporated polycrystalline CdO thin films for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Purohit, Anuradha; Chander, S.; Dhaka, M. S.

    2017-04-01

    An impact of annealing on the physical properties of polycrystalline CdO thin films is carried out in this study. CdO thin films of thickness 650 nm were fabricated on glass and indium tin oxide (ITO) substrates employing e-beam evaporation technique. The pristine thin films were annealed in air atmosphere at 250 °C, 400 °C and 550 °C for one hour followed by investigation of structural, optical, electrical and morphological properties along with elemental composition using X-ray diffraction (XRD), UV-Vis spectrophotometer, Fourier transform infrared (FTIR) spectrometer, source meter, scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS), respectively. XRD patterns confirmed the polycrystalline nature and cubic structure (with space group Fm 3 bar m) of the films. The crystallographic parameters are calculated and found to be influenced by the post-air annealing treatment. The optical study shows that direct band gap is ranging from 1.98 eV to 2.18 eV and found to be decreased with post-annealing. The refractive index and optical conductivity are also increased with annealing temperature. The current-voltage characteristics show ohmic behaviour of the annealed films. The surface morphology is observed to be improved with annealing and grain-size is increased as well as EDS spectrum confirmed the presence of cadmium (Cd) and oxygen (O) in the deposited films.

  7. Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1990--15 January 1991

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.

    1991-11-01

    Results and conclusion of Phase I of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe{sub 2} and CdTe solar cells. The kinetics of the formation of CuInSe{sub 2} by selenization with hydrogen selenide was investigated and a CuInSe{sub 2}/CdS solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe{sub 2} films and a cell efficiency of 7%. Detailed investigations of the open circuit voltage of CuInSe{sub 2} solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe{sub 2} thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe{sub 2} is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10% can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm{sup 2} are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.

  8. Applications of Polycrystalline Silicon-Germanium Thin Films in Metal-Oxide Technologies.

    NASA Astrophysics Data System (ADS)

    King, Tsu-Jae

    Polycrystalline silicon (poly-Si) is an important component of silicon integrated-circuit (IC) technology and is currently used in a wide range of device applications. The fundamental properties of silicon-germanium (Si _{rm 1-x}Ge_ {rm x}) indicate that poly-Si _{rm 1-x}Ge_ {rm x} can be a favorable alternative to poly-Si in many of these applications. Since the melting point of Si_{rm 1-x}Ge _{rm x} is lower than that of Si, physical phenomena controlling fabrication processes such as deposition, crystallization, and dopant activation occur at lower temperatures for Si_ {rm 1-x}Ge_{ rm x} than for Si. Thus, lower process temperatures can be used for poly-Si_{ rm 1-x}Ge_{rm x}, so that it is preferable to poly-Si for various applications in technologies which have limited thermal-budget allowances. In this work, a deposition technology for poly-Si_{rm 1 -x}Ge_{rm x} films has been developed, and the physical and electrical properties of these films have been characterized. Two important potential applications of poly-Si_ {rm 1-x}Ge_{ rm x} films in metal-oxide-semiconductor (MOS) technologies have been investigated: first, the application as a gate-electrode material; second, the application as a thin-film transistor (TFT) channel material. The resistivity of heavily doped p-type (p^+) poly -Si_{rm 1-x}Ge _{rm x} is lower than that of comparably doped poly-Si, and its work function can be easily modified by adjusting its germanium content. These properties make p^+ poly-Si _{rm 1-x}Ge_ {rm x} a very attractive candidate for the gate-electrode material in submicrometer complementary MOS (CMOS) technologies. p-channel TFTs fabricated in poly-Si_{rm 1-x}Ge _{rm x} exhibit well -behaved device characteristics and may be suitable for high-density static memory (SRAM) and three-dimensionally integrated circuit applications. n- and p-channel poly -Si_{rm 1-x}Ge _{rm x} TFTs have been successfully fabricated using conventional microelectronic fabrication techniques

  9. Transition between Efros–Shklovskii and Mott variable-range hopping conduction in polycrystalline germanium thin films

    NASA Astrophysics Data System (ADS)

    Li, Zhaoguo; Peng, Liping; Zhang, Jicheng; Li, Jia; Zeng, Yong; Luo, Yuechuan; Zhan, Zhiqiang; Meng, Lingbiao; Zhou, Minjie; Wu, Weidong

    2017-03-01

    We report on the electrical transport properties of polycrystalline germanium thin films which are grown by the DC magnetron sputtering method. The temperature dependent resistance of seven devices are measured from 290 K down to 10 K. The thermal excitation model dominating the transport properties at the high temperature regime (above ∼60 K) is demonstrated and the low temperature electron transport is governed by the variable-range hopping (VRH) mechanism. Moreover, we observed a transition from Efros–Shklovskii to Mott VRH at ∼25 K over the entire VRH conduction regime, which is well described by a universal scaling law.

  10. Ambient condition laser writing of graphene structures on polycrystalline SiC thin film deposited on Si wafer

    SciTech Connect

    Yue, Naili; Zhang, Yong; Tsu, Raphael

    2013-02-18

    We report laser induced local conversion of polycrystalline SiC thin-films grown on Si wafers into multi-layer graphene, a process compatible with the Si based microelectronic technologies. The conversion can be achieved using a 532 nm CW laser with as little as 10 mW power, yielding {approx}1 {mu}m graphene discs without any mask. The conversion conditions are found to vary with the crystallinity of the film. More interestingly, the internal structure of the graphene disc, probed by Raman imaging, can be tuned with varying the film and illumination parameters, resembling either the fundamental or doughnut mode of a laser beam.

  11. Ambient condition laser writing of graphene structures on polycrystalline SiC thin film deposited on Si wafer

    NASA Astrophysics Data System (ADS)

    Yue, Naili; Zhang, Yong; Tsu, Raphael

    2013-02-01

    We report laser induced local conversion of polycrystalline SiC thin-films grown on Si wafers into multi-layer graphene, a process compatible with the Si based microelectronic technologies. The conversion can be achieved using a 532 nm CW laser with as little as 10 mW power, yielding ˜1 μm graphene discs without any mask. The conversion conditions are found to vary with the crystallinity of the film. More interestingly, the internal structure of the graphene disc, probed by Raman imaging, can be tuned with varying the film and illumination parameters, resembling either the fundamental or doughnut mode of a laser beam.

  12. Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

    PubMed Central

    Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

    2012-01-01

    One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach. The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles. To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint. To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing

  13. Enhanced electrical properties at boundaries including twin boundaries of polycrystalline CdTe thin-film solar cells.

    PubMed

    Li, H; Liu, X X; Lin, Y S; Yang, B; Du, Z M

    2015-05-07

    The effect of grain boundaries (GBs), in particular twin boundaries (TBs), on CdTe polycrystalline thin films is studied by conductive atomic force microscopy (C-AFM), electron-beam-induced current (EBIC), scanning Kelvin probe microscopy (SKPM), electron backscatter diffraction (EBSD), and scanning transmission electron microscopy (STEM). Four types of CdTe grains with various densities of {111} Σ3 twin boundaries (TBs) are found in Cl-treated CdTe polycrystalline thin films: (1) grains having multiple {111} Σ3 TBs with a low angle to the film surface; (2) grains having multiple {111} Σ3 TBs parallel to the film surfaces; (3) small grains on a scale of not more than 500 nm, composed of Cd, Cl, Te, and O; and (4) CdTe grains with not more than two {111} Σ3 TBs. Grain boundaries (including TBs) exhibit enhanced current transport phenomena. However, the {111} Σ3 TB is much more beneficial to micro-current transport. The enhanced current transport can be explained by the lower electron potential at GBs (including TBs) than the grain interiors (GIs). Our results open new opportunities for enhancing solar cell performances by controlling the grain boundaries, and in particular TBs.

  14. Structure and magnetic properties of polycrystalline iron-platium and cobalt-platinum thin films for high density recording media

    NASA Astrophysics Data System (ADS)

    Jeong, Sangki

    2002-09-01

    The goal of this project was to investigate and increase the feasibility of use of FePt and CoPt polycrystalline thin films as high-density recording media, with a focus on targeting perpendicular recording. Understanding the atomic ordering process, developing the proper texture and small grains, lowering the processing temperature and optimizing magnetic properties were the main subjects of this thesis work. In this thesis, nano-structured polycrystalline high anisotropy thin films have been fabricated and characterized. Polycrystalline CoPt and FePt films exhibit perpendicular anisotropy after an annealing process only when their thickness is less than 5 nm. High temperature annealing is still required to obtain an atomically ordered phase with nearly full ordering. The ordering phase transformation is a discontinuous transformation that yields an inhomogeneous microstructure where significant amount of FCC phase remains, unless a long time annealing process is performed. To lower the atomic ordering temperature, an in-situ ordering process has been performed and the various underlayer structures with an MgO seed layer, have been deposited and investigated. Thin films with thicknesses below 10 nm exhibit perpendicular anisotropy with an average grain size in the range of 10--15 nm in this film. FePt [001] textured films using Pt/Ag seeding layer exhibit lower annealing temperature than FePt/MgO films, while other Ag or Cr seedlayers do not produce faster ordering kinetics. Based on the detailed analysis of nanostructure of FePt thin films, it has been learned that FCC disordered nanoclusters remains in the ordered grains. Detailed observation of magnetic properties and nanostructure by HRTEM suggests that, though a thermally activated component of the switching is observed, the low value of coercivity can be attributed predominantly to reversal processes associated with defect related domain nucleation. We postulate that the nucleation occurs in less ordered

  15. Structural and optical analysis of 60Co gamma-irradiated thin films of polycrystalline Ga10Se85Sn5

    NASA Astrophysics Data System (ADS)

    Ahmad, Shabir; Asokan, K.; Shahid Khan, Mohd.; Zulfequar, M.

    2015-12-01

    The present study focuses on the effects of gamma irradiation on structural and optical properties of polycrystalline Ga10Se85Sn5 thin films with a thickness of ∼300 nm deposited by the thermal evaporation technique on cleaned glass substrates. X-ray diffraction patterns of the investigated thin films show that crystallite growth occurs in the orthorhombic phase structure. The surface study carried out by using the scanning electron microscope (SEM) confirms that the grain size increases with gamma irradiation. The optical parameters were estimated from optical transmission spectra data measured from a UV-vis-spectrophotometer in the wavelength range of 200-1100 nm. The refractive index dispersion data of the investigated thin films follow the single oscillator model. The estimated values of static refractive index n0, oscillator strength Ed, zero frequency dielectric constant ε0, optical conductivity σoptical and the dissipation factor increases after irradiation, while the single oscillator energy Eo decreases after irradiation. It was found that the value of the optical band gap of the investigated thin films decreases and the corresponding absorption coefficient increases continuously with an increase in the dose of gamma irradiation. This post irradiation changes in the values of optical band gap and absorption coefficient were interpreted in terms of the bond distribution model.

  16. Impact of thermal annealing on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Dhaka, M. S.

    2016-06-01

    A study on impact of post-deposition thermal annealing on the physical properties of CdTe thin films is undertaken in this paper. The thin films of thickness 500 nm were grown on ITO and glass substrates employing thermal vacuum evaporation followed by post-deposition thermal annealing in air atmosphere within low temperature range 150-350 °C. These films were subjected to the XRD, UV-Vis NIR spectrophotometer, source meter, SEM coupled with EDS and AFM for structural, optical, electrical and surface topographical analysis respectively. The diffraction patterns reveal that the films are having zinc-blende cubic structure with preferred orientation along (111) and polycrystalline in nature. The crystallographic parameters are calculated and discussed in detail. The optical band gap is found in the range 1.48-1.64 eV and observed to decrease with thermal annealing. The current-voltage characteristics show that the CdTe films exhibit linear ohmic behavior. The SEM studies show that the as-grown films are homogeneous, uniform and free from defects. The AFM studies reveal that the surface roughness of films is observed to increase with annealing. The experimental results reveal that the thermal annealing has significant impact on the physical properties of CdTe thin films and may be used as absorber layer to the CdTe/CdS thin films solar cells.

  17. Transient and End Silicide Phase Formation in Thin Film Ni/polycrystalline-Si Reactions for Fully Silicided Gate Applications

    SciTech Connect

    Kittl,J.; Pawlak, M.; Torregiani, C.; Lauwers, A.; Demeurisse, C.; Vrancken, C.; Absil, P.; Biesemans, S.; Coia, C.; et. al

    2007-01-01

    The Ni/polycrystalline-Si thin film reaction was monitored by in situ x-ray diffraction during ramp annealings, obtaining a detailed view of the formation and evolution of silicide phases in stacks of interest for fully silicided gate applications. Samples consisted of Ni (30-170 nm)/polycrystalline-Si (100 nm)/SiO2 (10-30 nm) stacks deposited on (100) Si. The dominant end phase (after full silicidation) was found to be well controlled by the deposited Ni to polycrystalline-Si thickness ratio (tNi/tSi), with formation of NiSi2 ( {approx} 600 C), NiSi ( {approx} 400 C), Ni3Si2 ( {approx} 500 C), Ni2Si, Ni31Si12 ( {approx} 420 C), and Ni3Si ( {approx} 600 C) in stacks with tNi/tSi of 0.3, 0.6, 0.9, 1.2, 1.4, and 1.7, respectively. NiSi and Ni31Si12 were observed to precede formation of NiSi2 and Ni3Si, respectively, as expected for the phase sequence conventionally reported. Formation of Ni2Si was observed at early stages of the reaction. These studies revealed, in addition, the formation of transient phases that appeared and disappeared in narrow temperature ranges, competing with formation of the phases expected in the conventional phase sequence. These included the transient formation of NiSi and Ni31Si12 in stacks in which these phases are not expected to form (e.g., tNi/tSi of 1.7 and 0.9, respectively), at temperatures similar to those in which these phases normally grow.

  18. Ultrafast optical control of magnetization dynamics in polycrystalline bismuth doped iron garnet thin films

    SciTech Connect

    Deb, Marwan Vomir, Mircea; Rehspringer, Jean-Luc; Bigot, Jean-Yves

    2015-12-21

    Controlling the magnetization dynamics on the femtosecond timescale is of fundamental importance for integrated opto-spintronic devices. For industrial perspectives, it requires to develop simple growth techniques for obtaining large area magneto-optical materials having a high amplitude ultrafast Faraday or Kerr response. Here we report on optical pump probe studies of light induced spin dynamics in high quality bismuth doped iron garnet polycrystalline film prepared by the spin coating method. We demonstrate an ultrafast non-thermal optical control of the spin dynamics using both circularly and linearly polarized pulses.

  19. X-ray Microbeam Diffraction Measurements in Polycrystalline Aluminum and Copper Thin Films

    SciTech Connect

    Moyer, L.E.; Cargill, G.S.; Yang, W.; Larson, B.C.; Ice, G.E.

    2010-11-16

    Thermally induced residual strains in polycrystalline Cu and Al films on single crystal Si and glass substrates, respectively, have been examined on a grain-by-grain basis by x-ray microbeam diffraction. The crystallographic orientation and the deviatoric strain tensor, {var_epsilon}{sub ij}*, are determined for each grain by white beam Laue diffraction. From grain orientation mapping and strain tensor measurements, information is obtained about the distributions of strains for similarly oriented grains, about strain variations within single grains, and about grain-to-grain correlations of strains. This type of information may be useful in developing and testing theories for intergrain effects in strain evolution in polycrystals.

  20. Ultrafast optical control of magnetization dynamics in polycrystalline bismuth doped iron garnet thin films

    NASA Astrophysics Data System (ADS)

    Deb, Marwan; Vomir, Mircea; Rehspringer, Jean-Luc; Bigot, Jean-Yves

    2015-12-01

    Controlling the magnetization dynamics on the femtosecond timescale is of fundamental importance for integrated opto-spintronic devices. For industrial perspectives, it requires to develop simple growth techniques for obtaining large area magneto-optical materials having a high amplitude ultrafast Faraday or Kerr response. Here we report on optical pump probe studies of light induced spin dynamics in high quality bismuth doped iron garnet polycrystalline film prepared by the spin coating method. We demonstrate an ultrafast non-thermal optical control of the spin dynamics using both circularly and linearly polarized pulses.

  1. Impact of Surface Chemistry on Grain Boundary Induced Intrinsic Stress Evolution during Polycrystalline Thin Film Growth

    NASA Astrophysics Data System (ADS)

    Qi, Y.; Sheldon, B. W.; Guo, H.; Xiao, X.; Kothari, A. K.

    2009-02-01

    First principles calculations were integrated with cohesive zone and growth chemistry models to demonstrate that adsorbed species can significantly alter stresses associated with grain boundary formation during polycrystalline film growth. Using diamond growth as an example, the results show that lower substrate temperatures increase the hydrogen content at the surface, which reduces tensile stress, widens the grain boundary separations, and permits additional atom insertions that can induce compressive stress. More generally, this work demonstrates that surface heteroatoms can lead to behavior which is not readily described by existing models of intrinsic stress evolution.

  2. Chemical surface modification of polycrystalline platinum thin-films to promote preferential chemisorption of n-hexane, piperidine, and cyclohexane

    SciTech Connect

    Thomas, V.; Schwank, J.; Gland, J.

    1994-12-31

    In this study, hard/soft Lewis acid-base (HSAB) principles are used to modify a thin-polycrystalline platinum film to promote preferential chemisorption of molecules such as piperidine, n-hexane, and cyclohexane. Specifically, the particle size and electron density distribution of the platinum surface is modified using thermal treatment and co-adsorption of electro-positive and negative species. These studies are conducted in an ultra-high vacuum chamber. The platinum surface is characterized, before and after modification protocols, using a variety of in-situ and ex-situ techniques. These include temperature programmed desorption (TPD), both resistance change and work function measurements, and both X-ray photoelectron spectroscopy and diffraction.

  3. Formation of (111) nanotwin lamellae hillocks in polycrystalline silicon thin films caused by deposition of silicon dioxide layer

    SciTech Connect

    Imai, Shigeki; Fujimoto, Masayuki

    2006-01-09

    Plasma-enhanced chemical vapor deposition was used to deposit layers of tetraethylorthosilicate at different temperatures. In the case of low-temperature deposition (300 deg. C), the deposited film surface was smooth and the major surface defects of the polycrystalline silicon (poly-silicon) film surface were grooves of grain boundaries. In contrast, in the case of high-temperature deposition (500 deg. C), the deposited silicon oxide surface exhibited hillocks, and these hillocks were derived from the top end of inclined silicon (111) where protruding nanotwin lamellae penetrated the poly-silicon thin film. The observed hillocks stemming from nanotwin lamellae could have been formed by compressive stress during high-temperature silicon dioxide deposition.

  4. Electronic Transport Properties of Thin Film Inhomogeneous Composites: Silver/gold Copper Indium Diselenide and Silver Amorphous/polycrystalline Silicon

    NASA Astrophysics Data System (ADS)

    Ndlela, Zolili U.

    1990-08-01

    This work investigated a two component inhomogeneous thin film composite consisting of metal particles dispersed in a semiconductor matrix. The systems studied were silver (Ag) or gold (Au) dispersed in copper indium diselenide (CuInSe_2) and silver dispersed in amorphous silicon (alpha-Si) or polycrystalline-silicon. Their transport properties were measured from 20 to 400 K, and it was observed that the films were not adversely affected by the incorporation of metal particles into the semiconducting matrix. This study also provides a mechanism to explain the transport behavior which involves the concepts of localization, mobility edges, and hopping conduction. Evidence strongly indicates that conduction occurs in these composites by hopping and/or by tunneling between localized states or between metallic grains and that their behavior is characterized by a T^ {-1/4} or a T^{-1/2 } temperature dependence.

  5. Tailoring of in-plane magnetic anisotropy in polycrystalline cobalt thin films by external stress

    NASA Astrophysics Data System (ADS)

    Kumar, Dileep; Singh, Sadhana; Vishawakarma, Pramod; Dev, Arun Singh; Reddy, V. R.; Gupta, Ajay

    2016-11-01

    Polycrystalline Co films of nominal thickness ~180 Å were deposited on intentionally curved Si substrates. Tensile and compressive stresses of 100 MPa and 150 MPa were induced in the films by relieving the curvature. It has been found that, within the elastic limit, presence of stress leads to an in-plane magnetic anisotropy in the film and its strength increases with increasing stress. Easy axis of magnetization in the films is found to be parallel/ transverse to the compressive /tensile stresses respectively. The origin of magnetic anisotropy in the stressed films is understood in terms of magneto- elastic coupling, where the stress try to align the magnetic moments in order to minimize the magneto-elastic as well as anisotropy energy. Tensile stress is also found to be responsible for the surface smoothening of the films, which is attributed to the movement of the atoms associated with the applied stress. The present work provides a possible way to tailor the magnetic anisotropy and its direction in polycrystalline and amorphous films using external stress.

  6. Charge transport in polycrystalline silicon thin-films on glass substrates

    NASA Astrophysics Data System (ADS)

    Scheller, L.-P.; Nickel, N. H.

    2012-07-01

    Charge carrier transport in solid-phase crystallized polycrystalline silicon (poly-Si) was investigated as a function of the deposition temperature, Td, the amorphous starting material and the used substrates. The samples were characterized using temperature dependent transport measurements to determine the carrier concentration, mobility, and conductivity. Samples prepared on a-SiN:H covered borofloat glass exhibit a low carrier concentration that is independent of Td. In these samples, charge transport is dominated by intra-grain scattering mechanisms. In contrast, when poly-Si is prepared on corning glass, the carrier concentration shows an inverted U-shape behavior with increasing deposition temperature. The Hall mobility is thermally activated, which is consistent with thermionic carrier emission over potential energy barriers. The change of the activation energy with experimental parameters is accompanied by a large change of the exponential prefactor by more than 4 orders of magnitude. This is indicative of a Meyer-Neldel behavior. Moreover, at low temperatures, the conductivity deviates from an activated behavior indicating hopping transport with a mean hopping distance of ≈140 Å and an energy difference of ≈82 meV between the participating states. To derive insight into the underlying transport mechanisms and to determine information on barrier energy heights and grain-boundary defect-densities, the experimental data were analyzed employing transport models for polycrystalline materials.

  7. Schottky Barrier Thin Film Transistor (SB-TFT) on low-temperature polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    De Iacovo, A.; Ferrone, A.; Colace, L.; Minotti, A.; Maiolo, L.; Pecora, A.

    2016-12-01

    We report on the fabrication and characterization of Schottky barrier transistors on polycrystalline silicon. The transistors were realized exploiting Cr-Si and Ti-Si Schottky barrier with a low thermal budget process, compatible with polymeric, ultraflexible substrates. We obtained devices with threshold voltages as low as 1.7 V (for n channel) and 4 V (for p channel) with channel lengths ranging from 2 to 40 μm. Resulting on/off ratios are as high as 5 · 103. The devices showed threshold voltages and subthreshold slopes comparable with already published N- and P-MOS devices realized with the same process on polyimide substrates thus representing a cheaper and scalable alternative to ultraflexible transistors with doped source and drain.

  8. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing.

    PubMed

    Machida, Emi; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ikenoue, Hiroshi

    2012-12-17

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 μm, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

  9. Estimation of steady-state leakage current in polycrystalline PZT thin films

    NASA Astrophysics Data System (ADS)

    Podgorny, Yury; Vorotilov, Konstantin; Sigov, Alexander

    2016-09-01

    Estimation of the steady state (or "true") leakage current Js in polycrystalline ferroelectric PZT films with the use of the voltage-step technique is discussed. Curie-von Schweidler (CvS) and sum of exponents (Σ exp ) models are studied for current-time J (t) data fitting. Σ exp model (sum of three or two exponents) gives better fitting characteristics and provides good accuracy of Js estimation at reduced measurement time thus making possible to avoid film degradation, whereas CvS model is very sensitive to both start and finish time points and give in many cases incorrect results. The results give rise to suggest an existence of low-frequency relaxation processes in PZT films with characteristic duration of tens and hundreds of seconds.

  10. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

    SciTech Connect

    Machida, Emi; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ikenoue, Hiroshi

    2012-12-17

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

  11. Spatially resolved probing of Preisach density in polycrystalline ferroelectric thin films

    SciTech Connect

    Guo, Senli; Ovchinnikov, Oleg S; Curtis, Mark E; Johnson, Matthew B; Jesse, Stephen; Kalinin, Sergei V

    2010-01-01

    Applications of the ferroelectric materials for the information storage necessitate the understanding of local switching behavior on the level of individual grains and microstructural elements. In particular, implementation of multilevel neuromorphic elements requires the understanding of history-dependent polarization responses. Here, we introduce the spatially resolved approach for mapping local Preisach densities in polycrystalline ferroelectrics based on first-order reversal curve (FORC) measurements over spatially resolved grid by piezoresponse force spectroscopy using tip-electrode. The band excitation approach allowed effective use of cantilever resonances to amplify weak piezoelectric signal and also provided insight in position-, voltage-, and voltage history-dependent mechanical properties of the tip-surface contact. Several approaches for visualization and comparison of the multidimensional data sets formed by FORC families or Preisach densities at each point are introduced and compared. The relationship between switching behavior and microstructure is analyzed.

  12. Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

    NASA Astrophysics Data System (ADS)

    Zhou, Yan; Ramaneti, Rajesh; Anaya, Julian; Korneychuk, Svetlana; Derluyn, Joff; Sun, Huarui; Pomeroy, James; Verbeeck, Johan; Haenen, Ken; Kuball, Martin

    2017-07-01

    Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κDia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κDia in the measured 25-225 °C range. Device simulation using the experimental κDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.

  13. Role of Polycrystalline Thin-Film PV Technologies in Competitive PV Module Markets: Preprint

    SciTech Connect

    von Roedern, B.; Ullal, H. S.

    2008-05-01

    This paper discusses the developments in thin-film PV technologies and provides an outlook on future commercial module efficiencies achievable based on today's knowledge about champion cell performance.

  14. Characterization of the “native” surface thin film on pure polycrystalline iron: A high resolution XPS and TEM study

    NASA Astrophysics Data System (ADS)

    Bhargava, G.; Gouzman, I.; Chun, C. M.; Ramanarayanan, T. A.; Bernasek, S. L.

    2007-02-01

    The characterization of the "native" surface thin film on pure polycrystalline iron has been studied by high resolution X-ray photoelectron (XP) spectroscopy of Fe 2p and O 1s regions. The film was allowed to form by exposing the sample to atmosphere at ambient conditions for a period of 1 h. The systematic approach used here includes the determination of curve fitting parameters from external standards and their use in fitting the raw data for the surface thin film. The quantitative high resolution XPS analysis involved an angle resolved study of the surface to determine the chemical composition and thickness of this native film. The film was found to be a mixture of Fe 3O 4 and Fe(OH) 2 with a thickness of 1.2 ± 0.3 nm. This conclusion is consistent with thermodynamics as indicated by the Pourbaix diagram for the Fe-H 2O system and the phase diagram for the Fe-oxygen system. A detailed TEM study of the native surface film also supports this conclusion.

  15. Microstructural changes and fractal Ge nanocrystallites in polycrystalline Au/amorphous Ge thin bilayer films upon annealing

    NASA Astrophysics Data System (ADS)

    Chen, Z. W.; Lai, J. K. L.; Shek, C. H.

    2006-11-01

    Microstructural changes and fractal Ge nanocrystallites in polycrystalline Au/amorphous Ge thin bilayer films upon annealing have been investigated by scanning electron microscopy, transmission electron microscopy observations and x-ray energy-dispersive spectroscopy (EDS). Experimental results indicated that the microstructure of the metal Au film plays an important role in metal-induced crystallization for Au/Ge thin bilayer films upon annealing. Interestingly, we found the position exchange of Au and Ge films and the formation of the fractal Ge nanocrystallites induced by annealing. EDS microanalysis indicated that although there is lateral interdiffusion of Au and Ge atoms, the thickness of the fractal region and the matrix remain nearly the same. At the same time, EDS shows that there are also Au aggregates extending out of the films. It is suggested that, besides the preferred nucleation at the Au/Ge interface, the breaking of Ge-Ge bonds may stimulate the crystallization of amorphous Ge, so that the crystallization temperature of Au/Ge system is much lower than that of the isolated amorphous Ge system.

  16. Progress Toward a Stabilization and Preconditioning Protocol for Polycrystalline Thin-Film Photovoltaic Modules

    SciTech Connect

    del Cueto, J. A.; Deline, C. A.; Rummel, S. R.; Anderberg, A.

    2010-08-01

    Cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules can exhibit substantial variation in measured performance depending on prior exposure history. This study examines the metastable performance changes in these PV modules with the goal of establishing standard preconditioning or stabilization exposure procedures to mitigate measured variations prior to current-voltage (IV) measurements.

  17. Nanomechanical study of amorphous and polycrystalline ALD HfO2 thin films

    Treesearch

    K. Tapily; J.E. Jakes; D. Gu; H. Baumgart; A.A. Elmustafa

    2011-01-01

    Thin films of hafnium oxide (HfO2) were deposited by atomic layer deposition (ALD). The structural properties of the deposited films were characterised by transmission electron microscopy (TEM) and X-ray diffraction (XRD). We investigated the effect of phase transformations induced by thermal treatments on the mechanical properties of ALD HfO

  18. Anisotropic and inhomogeneous thermal conduction in suspended thin-film polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Sood, Aditya; Cho, Jungwan; Hobart, Karl D.; Feygelson, Tatyana I.; Pate, Bradford B.; Asheghi, Mehdi; Cahill, David G.; Goodson, Kenneth E.

    2016-05-01

    While there is a great wealth of data for thermal transport in synthetic diamond, there remains much to be learned about the impacts of grain structure and associated defects and impurities within a few microns of the nucleation region in films grown using chemical vapor deposition. Measurements of the inhomogeneous and anisotropic thermal conductivity in films thinner than 10 μm have previously been complicated by the presence of the substrate thermal boundary resistance. Here, we study thermal conduction in suspended films of polycrystalline diamond, with thicknesses ranging between 0.5 and 5.6 μm, using time-domain thermoreflectance. Measurements on both sides of the films facilitate extraction of the thickness-dependent in-plane ( κ r ) and through-plane ( κ z ) thermal conductivities in the vicinity of the coalescence and high-quality regions. The columnar grain structure makes the conductivity highly anisotropic, with κ z being nearly three to five times as large as κ r , a contrast higher than that reported previously for thicker films. In the vicinity of the high-quality region, κ r and κ z range from 77 ± 10 W/m-K and 210 ± 50 W/m-K for the 1 μm thick film to 130 ± 20 W/m-K and 710 ± 120 W/m-K for the 5.6 μm thick film, respectively. The data are interpreted using a model relating the anisotropy to the scattering on the boundaries of columnar grains and the evolution of the grain size considering their nucleation density and spatial rate of growth. This study aids in the reduction in the near-interfacial resistance of diamond films and efforts to fabricate diamond composites with silicon and GaN for power electronics.

  19. Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline lead zirconate titanate thin films

    NASA Astrophysics Data System (ADS)

    Araújo, E. B.; Lima, E. C.; Bdikin, I. K.; Kholkin, A. L.

    2013-05-01

    Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric, and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350 °C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300 °C. For pyrochlore-free PZT thin films, a small (100)-orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. The increase of self-polarization with the film thickness increasing from 200 nm to 710 nm suggests that Schottky barriers and/or mechanical coupling near the film-substrate interface are not primarily responsible for the observed self-polarization effect in our films.

  20. Switchable diode effect in polycrystalline Bi3.15Nd0.85Ti3O12 thin films for resistive memories

    NASA Astrophysics Data System (ADS)

    Song, H. J.; Wang, J. B.; Zhong, X. L.; Cheng, J. J.; Jia, L. H.; Wang, F.; Li, B.

    2013-12-01

    The switchable diode effect is found in the Bi3.15Nd0.85Ti3O12 (BNT) polycrystalline thin films with a residual polarization (2Pr) of 55 μC/cm2 fabricated on Pt/Ti/SiO2/Si substrates by chemical solution deposition. The consistencies of P-V and I-V curves demonstrate that the switchable diode effect is mainly triggered by polarization modulated Schottky-like barriers. The ON/OFF ratio of resistive switching based on these switchable diodes is more than 3 orders during the retention capacity measurement, which indicates that the polycrystalline BNT thin films are promising for the resistive memories applications.

  1. Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lee, Sang-hoon; Jung, Jae-soo; Lee, Sung-soo; Lee, Sung-bo; Hwang, Nong-moon

    2016-11-01

    For the applications such as flexible displays and solar cells, the direct deposition of crystalline silicon films on a flexible polymer substrate has been a great issue. Here, we investigated the direct deposition of polycrystalline silicon films on a polyimide film at the substrate temperature of 200 °C. The low temperature deposition of crystalline silicon on a flexible substrate has been successfully made based on two ideas. One is that the Si-Cl-H system has a retrograde solubility of silicon in the gas phase near the substrate temperature. The other is the new concept of non-classical crystallization, where films grow by the building block of nanoparticles formed in the gas phase during hot-wire chemical vapor deposition (HWCVD). The total amount of precipitation of silicon nanoparticles decreased with increasing HCl concentration. By adding HCl, the amount and the size of silicon nanoparticles were reduced remarkably, which is related with the low temperature deposition of silicon films of highly crystalline fraction with a very thin amorphous incubation layer. The dark conductivity of the intrinsic film prepared at the flow rate ratio of RHCl=[HCl]/[SiH4]=3.61 was 1.84×10-6 Scm-1 at room temperature. The Hall mobility of the n-type silicon film prepared at RHCl=3.61 was 5.72 cm2 V-1s-1. These electrical properties of silicon films are high enough and could be used in flexible electric devices.

  2. Cu-dependent phase transition in polycrystalline CuGaSe2 thin films grown by three-stage process

    NASA Astrophysics Data System (ADS)

    Islam, M. M.; Yamada, A.; Sakurai, T.; Kubota, M.; Ishizuka, S.; Matsubara, K.; Niki, S.; Akimoto, K.

    2011-07-01

    The Cu-dependent phase transition in polycrystalline CuGaSe2 thin films has been studied by an electron probe micro-analyzer (EPMA) and the synchrotron x-ray diffraction method. A Cu-deficiency parameter, Z, defined as (1 - Cu/Ga) was used to study the phase transition. Upon increasing the Z-value, the composition of the films on the Cu2Se-Ga2Se3 pseudo binary tie line was found to shift from the stoichiometric CuGaSe2 (1:1:2) (Z = 0) to the Ga-rich composition through the formation of several ordered defect compounds.The structural modification in the Cu-poor CuGaSe2 film has been investigated by the synchrotron x-ray diffraction method. The existence of the Cu-poor surface phase over the near-stoichiometric bulk CuGaSe2 film was confirmed by the fitting of the accelerated voltage dependent EPMA data.

  3. On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

    NASA Astrophysics Data System (ADS)

    Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

    2017-01-01

    Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

  4. Structural and optical properties of (Ag,Cu)(In,Ga)Se{sub 2} polycrystalline thin film alloys

    SciTech Connect

    Boyle, J. H.; Shafarman, W. N.; Birkmire, R. W.; McCandless, B. E.

    2014-06-14

    The structural and optical properties of pentenary alloy (Ag,Cu)(In,Ga)Se{sub 2} polycrystalline thin films were characterized over the entire compositional range at a fixed (Cu + Ag)/(In + Ga) ratio. Films deposited at 550 °C on bare and molybdenum coated soda-lime glass by elemental co-evaporation in a single-stage process with constant incident fluxes exhibit single phase chalcopyrite structure, corresponding to 122 spacegroup (I-42d) over the entire compositional space. Unit cell refinement of the diffraction patterns show that increasing Ag substitution for Cu, the refined a{sub o} lattice constant, (Ag,Cu)-Se bond length, and anion displacement increase in accordance with the theoretical model proposed by Jaffe, Wei, and Zunger. However, the refined c{sub o} lattice constant and (In,Ga)-Se bond length deviated from theoretical expectations for films with mid-range Ag and Ga compositions and are attributed to influences from crystallographic bond chain ordering or cation electronegativity. The optical band gap, derived from transmission and reflection measurements, widened with increasing Ag and Ga content, due to influences from anion displacement and cation electronegativity, as expected from theoretical considerations for pseudo-binary chalcopyrite compounds.

  5. Tunable thermal conductivity of thin films of polycrystalline AlN by structural inhomogeneity and interfacial oxidation.

    PubMed

    Jaramillo-Fernandez, J; Ordonez-Miranda, J; Ollier, E; Volz, S

    2015-03-28

    The effect of the structural inhomogeneity and oxygen defects on the thermal conductivity of polycrystalline aluminum nitride (AlN) thin films deposited on single-crystal silicon substrates is experimentally and theoretically investigated. The influence of the evolution of crystal structure, grain size, and out-of plane disorientation along the cross plane of the films on their thermal conductivity is analyzed. The impact of oxygen-related defects on thermal conduction is studied in AlN/AlN multilayered samples. Microstructure, texture, and grain size of the films were characterized by X-ray diffraction and scanning and transmission electron microscopy. The measured thermal conductivity obtained with the 3-omega technique for a single and multiple layers of AlN is in fairly good agreement with the theoretical predictions of our model, which is developed by considering a serial assembly of grain distributions. An effective thermal conductivity of 5.92 W m(-1) K(-1) is measured for a 1107.5 nm-thick multilayer structure, which represents a reduction of 20% of the thermal conductivity of an AlN monolayer with approximately the same thickness, due to oxygen impurities at the interface of AlN layers. Our results show that the reduction of the thermal conductivity as the film thickness is scaled down, is strongly determined by the structural inhomogeneities inside the sputtered films. The origin of this non-homogeneity and the effect on phonon scattering are also discussed.

  6. Effects of mechanical stresses on the reliability of low-temperature polycrystalline silicon thin film transistors for foldable displays

    NASA Astrophysics Data System (ADS)

    Bae, Min Soo; Park, Chuntaek; Shin, Dongseok; Lee, Sang Myung; Yun, Ilgu

    2017-07-01

    This paper investigates the mechanical reliability of low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) for foldable display. Both compressive and tensile directions of mechanical stresses were applied for different types of mechanical stresses, such as dynamic and static mechanical stresses. The electrical characteristics of tested n-channel TFTs under mechanical stress conditions were analyzed based on several key parameters, including the threshold voltage (Vth), field effect mobility (μFE), maximum drain current (ID.MAX) and subthreshold swing (Ssub). For both cases of dynamic and static mechanical stresses, increase of Vth and decrease of μFE and ID.MAX were observed in the compressive direction. This trend was inversed when tensile stress was applied. The degradation of electrical characteristics originates from the change of lattice constant after mechanical stress. However, Ssub increases under dynamic tensile stress while it remains unchanged within 5% under static tensile stress. Transient analysis while bent condition was conducted to investigate the change of parameters in time.

  7. On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

    NASA Astrophysics Data System (ADS)

    Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

    2017-04-01

    Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

  8. Ferroelectric properties of lead-free polycrystalline CaBi{sub 2}Nb{sub 2}O{sub 9} thin films on glass substrates

    SciTech Connect

    Ahn, Yoonho Son, Jong Yeog; Jang, Joonkyung

    2016-03-15

    CaBi{sub 2}Nb{sub 2}O{sub 9} (CBNO) thin film, a lead-free ferroelectric material, was prepared on a Pt/Ta/glass substrate via pulsed laser deposition. The Ta film was deposited on the glass substrate for a buffer layer. A (115) preferred orientation of the polycrystalline CBNO thin film was verified via X-ray diffraction measurements. The CBNO thin film on a glass substrate exhibited good ferroelectric properties with a remnant polarization of 4.8 μC/cm{sup 2} (2P{sub r} ∼9.6 μC/cm{sup 2}), although it had lower polarization than the epitaxially c-oriented CBNO thin film reported previously. A mosaic-like ferroelectric domain structure was observed via piezoresponse force microscopy. Significantly, the polycrystalline CBNO thin film showed much faster switching behavior within about 100 ns than that of the epitaxially c-oriented CBNO thin film.

  9. Development of tandem cells consisting of GaAs single crystal and CuInSe2/CdZnS polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Kim, Namsoo P.; Stanbery, Billy J.; Gale, Ronald P.; McClelland, Robert W.

    1989-04-01

    The tandem cells consisting of GaAs single crystal and CuInSe2 polycrystalline thin films are being developed under the joint program of the Boeing Co. and Kopin Corp. to meet the increasing power needs for future spacecraft. The updated status of this program is presented along with experimental results such as cell performance, and radiation resistance. Other cell characteristics including the specific power of and the interconnect options for this tandem cell approach are also discussed.

  10. Development of tandem cells consisting of GaAs single crystal and CuInSe2/CdZnS polycrystalline thin films

    NASA Technical Reports Server (NTRS)

    Kim, Namsoo P.; Stanbery, Billy J.; Gale, Ronald P.; Mcclelland, Robert W.

    1989-01-01

    The tandem cells consisting of GaAs single crystal and CuInSe2 polycrystalline thin films are being developed under the joint program of the Boeing Co. and Kopin Corp. to meet the increasing power needs for future spacecraft. The updated status of this program is presented along with experimental results such as cell performance, and radiation resistance. Other cell characteristics including the specific power of and the interconnect options for this tandem cell approach are also discussed.

  11. Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Cleaver, William M.; Barron, Andrew R.; Power, Michael B.; Hepp, Aloysius F.

    1992-01-01

    The dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.

  12. Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Cleaver, William M.; Barron, Andrew R.; Power, Michael B.; Hepp, Aloysius F.

    1992-01-01

    The dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.

  13. Tutorial: Understanding residual stress in polycrystalline thin films through real-time measurements and physical models

    NASA Astrophysics Data System (ADS)

    Chason, Eric; Guduru, Pradeep R.

    2016-05-01

    Residual stress is a long-standing issue in thin film growth. Better understanding and control of film stress would lead to enhanced performance and reduced failures. In this work, we review how thin film stress is measured and interpreted. The results are used to describe a comprehensive picture that is emerging of what controls stress evolution. Examples from multiple studies are discussed to illustrate how the stress depends on key parameters (e.g., growth rate, material type, temperature, grain size, morphology, etc.). The corresponding stress-generating mechanisms that have been proposed to explain the data are also described. To develop a fuller understanding, we consider the kinetic factors that determine how much each of these processes contributes to the overall stress under different conditions. This leads to a kinetic model that can predict the dependence of the stress on multiple parameters. The model results are compared with the experiments to show how this approach can explain many features of stress evolution.

  14. polycrystalline ceramics

    NASA Astrophysics Data System (ADS)

    Cai, Yunqi; Ma, Ji; Cui, Qi; Wang, Wenzhang; Zhang, Hui; Chen, Qingming

    2014-12-01

    La2/3Ca1/3MnO3 polycrystalline ceramics were synthesized by sol-gel method. Sharp temperature coefficient of resistance (TCR) variation (with peak value up to 22 %) has been observed near the metal-insulator transition temperature T MI (273 K) for the sample sintered at 1,450 °C. This TCR value is much higher than the previously reported values for the undoped and Ag-doped La0.67Ca0.33MnO3 samples and is comparable to the optimized thin films. It was concluded that the improved physical properties of the La0.67Ca0.33MnO3 material are due to its improved microstructure and homogeneity.

  15. Electrochemical photovoltaic and photoelectrochemical storage cells based on II-VI polycrystalline thin film materials

    SciTech Connect

    Wallace, W.L.

    1983-06-01

    Research on electrochemical photovoltaic cells incorporating thin film CdSe and CdSe /SUB x/ Te /SUB 1-x/ photoanodes has progressed to the point where efficiencies of up to 7% can be achieved on small area electrodes using a polysulfide electrolyte. Higher efficiencies can be obtained in alternate electrolytes in significantly less stable systems. The major limitations on cell efficiency are associated with the open circuit voltage and fill factor. At present, the most promising photoelectrochemical storage system is an in situ three electrode cell which consists of an n-CdSe /SUB x/ Te /SUB 1-x/ photoanode and CoS counterelectrode in a sulfide/polysulfide electrolyte and a Sn/SnS storage electrode isolated in an aqueous sulfide electrolyte.

  16. Research on polycrystalline thin-film CuGaInSe2 solar cells

    NASA Astrophysics Data System (ADS)

    Stanbery, B. J.; Chen, W. S.; Devaney, W. E.; Stewart, J. W.

    1992-11-01

    This report describes research to fabricate high-efficiency CdZnS/CuInGaSe2 (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13 percent efficient, 1-sq cm total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO / Cd(0.82)Zn(0.18)S / CuIn(0.80)Ga(0.20)Se2 cell that was verified at NREL under standard testing conditions at 13.1 percent efficiency with V(sub oc) = 0.581 V, J(sub sc) = 34.8 mA/sq cm, FF = 0.728, and a cell area of 0.979 sq cm.

  17. Research on polycrystalline thin-film CuInGaSe2 solar cells

    NASA Astrophysics Data System (ADS)

    Chen, W. S.; Stewart, J. M.; Mickelsen, R. A.; Devaney, W. E.; Stanbery, B. J.

    1993-10-01

    This report describes work to fabricate high-efficiency CdZnS/CuInGaSe2, thin-film solar cells and to develop improved transparent conductor window layers such as ZnO. The specific technical milestone for Phase 1 was to demonstrate an air mass (AM) 1.5 global 13% , 1-cm(exp 2) total-area CuInGaSe2 (CIGS) thin-film solar cell. For Phase 2, the objective was to demonstrate an AM1.5 global 13.5%, 1-cm(exp 2) total-area efficiency. We focused our activities on three areas. First, we modified the CIGS deposition system to double its substrate capacity. Second, we developed new tooling to enable investigation of a modified aqueous CdZnS process in which the goal was to improve the yield of this critical step in the device fabrication process. Third, we upgraded the ZnO sputtering system to improve its reliability and reproducibility. A dual rotatable cathode metallic source was installed, and the sputtering parameters were further optimized to improve ZnO's properties as a transparent conducting oxide (TCO). Combining the refined CdZnS process with CIGS from the newly fixtured deposition system enable us to fabricate and deliver a ZnO/Cd(0.08)Zn(0.20)S/CuIn(0.74)Ga(0.26)Se2 cell on alumina with I-V characteristics, as measured by NREL under standard test conditions, of 13.7% efficiency with V(proportional to) = 0.5458 V, J(sub sc) = 35.48 mA/cm(exp 2), FF = 0.688, and efficiency = 14.6%.

  18. Research on polycrystalline thin-film CuGaInSe[sub 2] solar cells

    SciTech Connect

    Stanbery, B.J.; Chen, W.S.; Devaney, W.E.; Stewart, J.W. . Defense and Space Systems Group)

    1992-11-01

    This report describes research to fabricate high-efficiency CdZnS/CuInGaSe[sub 2] (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13% efficient, 1-cm[sup 2]-total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition: system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO//Cd[sub 0.82]Zn[sub 0.18]S/CuIn[sub 0.80]Ga[sub 0.20]Se[sub 2] cell that was verified at NREL under standard testing conditions at 13.1% efficiency with V[sub oc] = 0.581 V, J[sub sc] = 34.8 mA/cm[sup 2], FF = 0.728, and a cell area of 0.979 cm[sup 2].

  19. Influence of the microstructure on the resulting 18R martensitic transformation of polycrystalline Cu−Al−Zn thin films obtained by sputtering and reactive annealing

    SciTech Connect

    Domenichini, P.; Condó, A.M.; Soldera, F.; Sirena, M.; Haberkorn, N.

    2016-04-15

    We report the influence of the microstructure on the martensitic transformation in polycrystalline Cu−Zn−Al thin films with 18R structure. The films are grown in two steps. First, Cu−Al thin films are obtained by DC sputtering. Second, the Zn is introduced in the Cu−Al thin films by the annealing them together with a bulk Cu−Zn−Al reference. The crystalline structure of the films was analyzed by X-ray diffraction and transmission electron microscopy. The martensitic transformation temperature was measured by electrical transport using conventional four probe geometry. It was observed that temperatures above 973 K are necessary for zincification of the samples to occur. The resulting martensitic transformation and its hysteresis (barrier for the transformation) depend on the grain size, topology and films thickness. - Highlights: • Polycrystalline Cu−Al−Zn thin films with nanometric grain size are sintered. • Influence of thermal annealing process on the microstructure is analyzed. • Martensitic transformation of Cu−Al−Zn thin films is strongly affected by the microstructure.

  20. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    NASA Astrophysics Data System (ADS)

    Li, Wei; Varlamov, Sergey; Xue, Chaowei

    2014-09-01

    This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, Voc and Jsc than the one on the seed layer without RTA treatment.

  1. Elastic properties determination of CuInSe2 polycrystalline thin films via a dynamic method

    NASA Astrophysics Data System (ADS)

    Hadjoub, Z.; Merdes, S.; Hadjoub, I.; Doghmane, A.

    2010-11-01

    Developing and using a simulation program based on the spectrum angular model, we first determine reflectance functions and acoustic signatures for bulk as well as for different thickness of CuInSe2 films. For bulk material, it is found that the longitudinal and Rayleigh modes are excited at incidence angles of 23.4° and 47°, respectively. This result reveals the great difficulties to characterize CuInSe2 with a conventional scanning acoustic microscope that uses a lens half- opening angle of 50° and water as a coupling liquid. Hence, Freon is used as alternative coupling liquid. Consequently, the effect of thickness on reflection coefficient and acoustic signature variations are quantified for both bulk and thin material. It is shown that as the thickness increases: (i) the critical angle of mode excitation increases, (ii) the periods of acoustic signature curves decrease and (iii) the Rayleigh velocity, VR, mode shifts towards lower values. Hence, a velocity dispersion curve is established in terms of VR as a function of film thickness; it decreases initially from the velocity value of the glass substrate then saturates when it reaches that of CuInSe2. The importance of such curve lies in the possibility of velocity determination by just knowing the thickness, and vice versa. Moreover, elastic constants are straight forward deduced from such a velocity.

  2. Thin film polycrystalline silicon solar cells: first technical progress report, April 15, 1980-July 15, 1980

    SciTech Connect

    1980-07-01

    The objectives of this contract are to fabricate large area thin film silicon solar cells with AM1 efficiency of 10% or greater with good reproducibility and good yield and to assess the feasibility of implementing this process for manufacturing solar cells at a cost of $300/kWe. Efforts during the past quarter have been directed to the purification of metallurgical silicon, the preparation of substrates, and the fabrication and characterization of solar cells. The partial purification of metallurgical silicon by extraction with aqua regia has been investigated in detail, and the resulting silicon was analyzed by the atomic absorption technique. The unidirectional solidification of aqua regia-extracted metallurgical silicon on graphite was used for the preparation of substrates, and the impurity distribution in the substrate was also determined. Large area (> 30 cm/sup 2/) solar cells have been prepared from aqua regia-extracted metallurgical silicon substrates by the thermal reduction of trichlorosilane containing appropriate dopants. Chemically deposited tin-dioxide films were used as antireflection coatings. Solar cells with AM1 efficiencies of about 8.5% have been obtained. Their spectral response, minority carrier diffusion length, and I/sub sc/-V/sub oc/ relation have been measured.

  3. Electrochemical characterisation of copper thin-film formation on polycrystalline platinum.

    PubMed

    Berkes, Balázs B; Henry, John B; Huang, Minghua; Bondarenko, Alexander S

    2012-09-17

    Electrochemically formed thin films are vital for a broad range of applications in virtually every field of modern science and technology. Understanding the film formation process could provide a means to aid the characterisation and control of film properties. Herein, we present a fundamental approach that combines two well-established analytical techniques (namely, electrochemical impedance spectroscopy and electrogravimetry) with a theoretical approach to provide physico-chemical information on the electrode/electrolyte interface during film formation. This approach allows the monitoring of local and overall surface kinetic parameters with time to enable an evaluation of the different modes of film formation. This monitoring is independent of surface area and surface concentrations of electroactive species and so may allow current computational methods to calculate these parameters and provide a deeper physical understanding of the electrodeposition of new bulk phases. The ability of this method to characterise 3D phase growth in situ in more detail than that obtained by conventional approaches is demonstrated through the study of a model system, namely, Cu bulk-phase deposition on a Pt electrode covered with a Cu atomic layer (Cu(ad)/Pt).

  4. Self-aligned metal double-gate junctionless p-channel low-temperature polycrystalline-germanium thin-film transistor with thin germanium film on glass substrate

    NASA Astrophysics Data System (ADS)

    Hara, Akito; Nishimura, Yuya; Ohsawa, Hiroki

    2017-03-01

    Low-temperature (LT) polycrystalline-germanium (poly-Ge) thin-film transistors (TFTs) are viable contenders for use in the backplanes of flat-panel displays and in systems-on-glass because of their superior electrical properties compared with silicon and oxide semiconductors. However, LT poly-Ge shows strong p-type characteristics. Therefore, it is not easy to reduce the leakage current using a single-gate structure such as a top-gate or bottom-gate structure. In this study, self-aligned planar metal double-gate p-channel junctionless LT poly-Ge TFTs are fabricated on a glass substrate using a 15-nm-thick solid-phase crystallized poly-Ge film and aluminum-induced lateral metallization source-drain regions (Al-LM-SD). A nominal field-effect mobility of 19 cm2 V-1 s-1 and an on/off ratio of 2 × 103 were obtained by optimizing the Al-LM-SD on a glass substrate through a simple, inexpensive LT process.

  5. Synergistic effects of water addition and step heating on the formation of solution-processed zinc tin oxide thin films: towards high-mobility polycrystalline transistors

    NASA Astrophysics Data System (ADS)

    Huang, Genmao; Duan, Lian; Zhao, Yunlong; Zhang, Yunge; Dong, Guifang; Zhang, Deqiang; Qiu, Yong

    2016-11-01

    Thin-film transistors (TFTs) with high mobility and good uniformity are attractive for next-generation flat panel displays. In this work, solution-processed polycrystalline zinc tin oxide (ZTO) thin film with well-ordered microstructure is prepared, thanks to the synergistic effect of water addition and step heating. The step heating treatment other than direct annealing induces crystallization, while adequate water added to precursor solution further facilitates alloying and densification process. The optimal polycrystalline ZTO film is free of hierarchical sublayers, and featured with an increased amount of ternary phases, as well as a decreased fraction of oxygen vacancies and hydroxides. TFT devices based on such an active layer exhibit a remarkable field-effect mobility of 52.5 cm2 V-1 s-1, a current on/off ratio of 2 × 105, a threshold voltage of 2.32 V, and a subthreshold swing of 0.36 V dec-1. Our work offers a facile method towards high-performance solution-processed polycrystalline metal oxide TFTs.

  6. Synergistic effects of water addition and step heating on the formation of solution-processed zinc tin oxide thin films: towards high-mobility polycrystalline transistors.

    PubMed

    Huang, Genmao; Duan, Lian; Zhao, Yunlong; Zhang, Yunge; Dong, Guifang; Zhang, Deqiang; Qiu, Yong

    2016-11-18

    Thin-film transistors (TFTs) with high mobility and good uniformity are attractive for next-generation flat panel displays. In this work, solution-processed polycrystalline zinc tin oxide (ZTO) thin film with well-ordered microstructure is prepared, thanks to the synergistic effect of water addition and step heating. The step heating treatment other than direct annealing induces crystallization, while adequate water added to precursor solution further facilitates alloying and densification process. The optimal polycrystalline ZTO film is free of hierarchical sublayers, and featured with an increased amount of ternary phases, as well as a decreased fraction of oxygen vacancies and hydroxides. TFT devices based on such an active layer exhibit a remarkable field-effect mobility of 52.5 cm(2) V(-1) s(-1), a current on/off ratio of 2 × 10(5), a threshold voltage of 2.32 V, and a subthreshold swing of 0.36 V dec(-1). Our work offers a facile method towards high-performance solution-processed polycrystalline metal oxide TFTs.

  7. Ion-Assisted Laser Deposition of Intermediate Layers for Yttrium BARIUM(2) COPPER(3) OXYGEN(7-DELTA) Thin Film Growth on Polycrystalline and Amorphous Substrates.

    NASA Astrophysics Data System (ADS)

    Reade, Ronald Paul

    The growth of YB_2Cu _3O_{7-delta} (YBCO) high-temperature superconductor thin films has largely been limited to deposition on single-crystal substrates to date. In order to expand the range of potential applications, growth on polycrystalline and amorphous substrates is desirable. In particular, the deposition of YBCO thin films with high critical current densities on polycrystalline metal alloys would allow the manufacture of superconducting tapes. However, it is shown that it is not possible to grow YBCO thin films directly on this type of substrate due to chemical and structural incompatibility. This work investigates the use of a yttria-stabilized zirconia (YSZ) intermediate layer to address this problem. An ion-assisted pulsed-laser deposition process is developed to provide control of orientation during the growth of the YSZ layers. The important properties of YBCO and YSZ are summarized and the status of research on thin film growth of these materials is reviewed. An overview of the pulsed-laser deposition (PLD) technique is presented. The use of ion -assisted deposition techniques to control thin film properties is discussed. Using an ion-assisted PLD process, the growth of (001) YSZ layers with controlled alignment of the in -plane crystal axes is achieved on polycrystalline metal and other polycrystalline and amorphous substrates. Studies of the important process parameters are presented. These layers are demonstrated to be appropriate for the subsequent deposition of c-axis YBCO thin films with alignment of the in-plane axes. A critical temperature of 92K and critical current densities (at 77K) of 6times 10^5 and 5times 10^4 A/cm ^2 without and with a 0.4T magnetic field, have been achieved. These critical current densities are higher than those demonstrated for competing technologies. The applicability of the developed technology is discussed. The control of film orientation using the ion-assisted PLD process is compared to the existing theory and

  8. Improvement in pH sensitivity of low-temperature polycrystalline-silicon thin-film transistor sensors using H2 sintering.

    PubMed

    Yen, Li-Chen; Tang, Ming-Tsyr; Chang, Fang-Yu; Pan, Tung-Ming; Chao, Tien-Sheng; Lee, Chiang-Hsuan

    2014-02-25

    In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H2 sintering process. The low-temperature polycrystalline-silicon (LTPS) TFT sensor with H2 sintering exhibited a high sensitivity than that without H2 sintering. This result may be due to the resulting increase in the number of Si-OH2(+) and Si-O(-) bonds due to the incorporation of H in the gate oxide to reduce the dangling silicon bonds and hence create the surface active sites and the resulting increase in the number of chemical reactions at these surface active sites. Moreover, the LTPS TFT sensor device not only offers low cost and a simple fabrication processes, but the technique also can be extended to integrate the sensor into other systems.

  9. A comparison of scattering and non-scattering anti-reflection designs for back contacted polycrystalline thin film silicon solar cells in superstrate configuration

    NASA Astrophysics Data System (ADS)

    Lockau, Daniel; Hammerschmidt, M.; Haschke, Jan; Blome, Mark; Ruske, F.; Schmidt, F.; Rech, B.

    2014-05-01

    A new generation of polycrystalline silicon thin film solar cells is currently being developed in laboratories, employing a combination of novel laser or electron beam based liquid phase crystallization (LPC) techniques and single side contacting systems. The lateral grain size of these polycrystalline cells is in the millimeter range at an absorber thickness of up to 10 μm. In this contribution we present a comparative simulation study of several 1D, 2D and 3D nano-optical designs for the substrate / illumination side interface to the several micrometer thick back contacted LPC silicon absorber material. The compared geometries comprise multilayer coatings, gratings with step and continuous profiles as well as combinations thereof. Using the transfer matrix method and a finite element method implementation to rigorously solve Maxwell's equations, we discuss anti-reflection and scattering properties of the different front interface designs in view of the angular distribution of incident light.

  10. Atomic-resolution characterization of the effects of CdCl{sub 2} treatment on poly-crystalline CdTe thin films

    SciTech Connect

    Paulauskas, T. Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Klie, R. F.

    2014-08-18

    Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl{sub 2} environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl{sub 2}, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

  11. Structural characterization and optical properties of Sol-gel-derived polycrystalline Pb(Zr0.35Ti0.65)O3 thin films

    NASA Astrophysics Data System (ADS)

    Zhang, Fan; Zhang, Rong Jun; Wang, Zi Yi; Zheng, Yu Xiang; Wang, Song You; Zhao, Hai Bin; Chen, Liang Yao; Liu, Xiao Bin; Jiang, An Quan

    2013-07-01

    Polycrystalline Pb(Zr0.35Ti0.65)O3 thin films prepared on Pt/Ti/SiO2/Si substrate by using solgel technique were characterized by using X-ray diffraction (XRD) and atomic force microscopy (AFM). The optical properties of the films were investigated by using spectroscopic ellipsometry (SE) with a four-phase optical model, air/roughness layer/PZT layer/Pt layer in the spectral range of 300-800 nm. The optical band gap of the films calculated following the Tauc's Law was smaller than that of an amorphous PZT thin film with some microcrystals existing on the surface. The result indicates that the quantum-size effect leads to an increase in band gap when the crystalline dimensions become very small.

  12. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

    SciTech Connect

    Wohlgemuth, J.; Narayanan, M.

    2006-07-01

    The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

  13. Strain evolution of each type of grains in poly-crystalline (Ba,Sr)TiO3 thin films grown by sputtering

    PubMed Central

    Park, Woo Young; Park, Min Hyuk; Lee, Jong Ho; Yoon, Jung Ho; Han, Jeong Hwan; Choi, Jung-Hae; Hwang, Cheol Seong

    2012-01-01

    The strain states of [111]-, [110]-, and [002]-oriented grains in poly-crystalline sputtered (Ba,Sr)TiO3 thin films on highly [111]-oriented Pt electrode/Si substrates were carefully examined by X-ray diffraction techniques. Remarkably, [002]-oriented grains respond more while [110]- and [111]-oriented grains do less than the theoretically estimated responses, which is understandable from the arrangement of the TiO6 octahedra with respect to the stress direction. Furthermore, such mechanical responses are completely independent of the degree of crystallization and film thickness. The transition growth temperature between the positive and negative strains was also different depending on the grain orientation. The unstrained lattice parameter for each type of grain was different suggesting that the oxygen vacancy concentration for each type of grain is different, too. The results reveal that polycrystalline (Ba,Sr)TiO3 thin films are not an aggregation of differently oriented grains which simply follow the mechanical behavior of single crystal with different orientations. PMID:23230505

  14. Quantitative analysis of the magnetic domain structure in polycrystalline La(0.7)Sr(0.3)MnO3 thin films by magnetic force microscopy.

    PubMed

    Li, Zhenghua; Wei, Fulin; Yoshimura, Satoru; Li, Guoqing; Asano, Hidefumi; Saito, Hitoshi

    2013-01-14

    The nanoscale magnetic domain structure of the polycrystalline La(0.7)Sr(0.3)MnO(3) granular thin films was imaged with a developed magnetic force microscopy technique by simultaneously detecting both the perpendicular and in-plane components of magnetic field gradients during the same scan of the tip oscillation. The characteristics of both the perpendicular and in-plane magnetic field gradient at the grain edges or the nonmagnetic grain boundary phase for LSMO films were demonstrated and can be used to evaluate the magnetic domain structure and magnetic isolation between neighboring grains. A two dimensional signal transformation algorithm to reconstruct the in-plane magnetization distribution of the polycrystalline LSMO thin films from the measured raw MFM images with the aid of the deconvolution technique was presented. The comparison between the experimental and simulated MFM images indicates that the magnetic grains or clusters are in the single domain (SD) or multi-domain (MD) state with the magnetic moments parallel or anti-parallel to the effective magnetic field of each grain, possibly due to the need for minimizing the total energy. The quantitative interpretation of the magnetic domain structure indicates that the large magnetoresistance in the studied LSMO films is mainly due to tunnel effect and scattering of conducted electrons at the nonmagnetic grain boundary phase related to the different configurations of magnetic domain states between neighboring grains.

  15. [Spectral analyzing effects of atmosphere states on the structure and characteristics of CdTe polycrystalline thin films made by close-spaced sublimation].

    PubMed

    Zheng, Hua-jing; Zheng, Jia-gui; Feng, Liang-huan; Zhang, Jing-quan; Xie, Er-qing

    2005-07-01

    The structure and characteristics of CdTe thin films are dependent on the working atmosphere states in close-spaced sublimation. In the present paper, CdTe polycrystalline thin films were deposited by CSS in mixture atmosphere of argon and oxygen. The physical mechanism of CSS was analyzed, and the temperature distribution in CSS system was measured. The dependence of preliminary nucleus creation on the atmosphere states (involving component and pressure) was studied. Transparencies were measured and optic energy gaps were calculated. The results show that: (1) The CdTe films deposited in different atmospheres are cubic structure. With increasing oxygen concentration, a increases and reaches the maximum at 6% oxygen concentration, then reduces, and increases again after passing the point at 12% oxygen concentration. Among them, the sample depositing at 9% oxygen concentration is the best. The optic energy gaps are 1.50-1.51 eV for all CdTe films. (2) The samples depositing at different pressures at 9% oxygen concentration are all cubical structure of CdTe, and the diffraction peaks of CdS and SnO2:F still appear. With the gas pressure increasing, the crystal size of CdTe minishes, the transparency of the thin film goes down, and the absorption side shifts to the short-wave direction. (3) The polycrystalline thin films with high quality deposit in 4 minutes under the depositing condition that the substrate temperature is 550 degrees C, and source temperature is 620 degrees C at 9% oxygen concentration.

  16. Polarization Manipulation via Orientation Control in Polycrystalline BiFeO3 Thin Films on Biaxially Textured, Flexible Metallic Tapes

    NASA Astrophysics Data System (ADS)

    Shin, Junsoo; Goyal, Amit; Jesse, Stephen; Heatherly, Lee

    2011-02-01

    (111)-, (101)-, and (001)-oriented polycrystalline BiFeO3 films were fabricated on rolling-assisted biaxially textured substrates (RABiTS) with appropriate engineering of heteroepitaxially grown buffer multilayers on RABiTS. The crystallographic orientation and polarization direction were confirmed using X-ray diffraction and piezoresponse force microscopy (PFM), respectively. All the films exhibited excellent piezoelectric properties. Switching spectroscopy PFM demonstrated that the switching polarization in (111)-oriented polycrystalline BiFeO3 films is higher than that in (101)- or (001)-oriented films. These BiFeO3 films on low-cost, flexible, biaxially textured metallic tapes with controllable orientation and polarization are attractive for application in flexible piezoelectric devices.

  17. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

    PubMed Central

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-01-01

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at −0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature. PMID:27098115

  18. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.

    PubMed

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-04-21

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at -0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm(2)/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature.

  19. Microstructure imaging of C54-TiSi2 polycrystalline thin films by micro-Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Meinardi, F.; Quilici, S.; Borghesi, A.; Artioli, G.

    1999-11-01

    The morphology of C54-TiSi2 polycrystalline films has been revealed by the micro-Raman imaging technique. This was based on the calculation of the symmetries of the Raman active vibrations of the C54-TiSi2 single crystal and subsequent polarized Raman measurements to detect and unambiguously label all the expected peaks. The relative intensity of two suitable peaks was monitored and mapped on C54-TiSi2 blanket films. Grains with different orientation are clearly detectable, and the microstructure properties of the film can be analyzed.

  20. Evaluation on residual stress in Bi3.15(Eu0.7Nd0.15)Ti3O12 polycrystalline ferroelectric thin film by using the orientation average method

    NASA Astrophysics Data System (ADS)

    Wei, Y.; Cheng, H. B.; Wang, X. Y.; Zheng, X. J.

    2012-12-01

    We propose an orientation average method to evaluate residual stresses in polycrystalline thin films. Bi3.15(Eu0.7Nd0.15)Ti3O12 was used to verify our approach, with films prepared by metal organic decomposition at various annealing temperatures. The mechanical properties and microstructure were characterized by nanoindentation and X-ray diffraction. The thin film annealed at 600 °C has the largest residual compressive stress of 771 MPa among all thin films. The residual stresses are evaluated by the proposed method and traditional sin2ψ method, and the maximum distinction is less than 6.43%, demonstrating that the proposed method is reliable and convenient to evaluate residual stress in polycrystalline thin films.

  1. High-performance polycrystalline silicon thin-film transistors with two-dimensional location control of the grain boundary via excimer laser crystallization.

    PubMed

    Wang, Chao-Lung; Lee, I-Che; Wu, Chun-Yu; Liao, Chan-Yu; Cheng, Yu-Ting; Cheng, Huang-Chung

    2012-07-01

    High-performance low-temperature polycrystalline silicon (Poly-Si) thin-film transistors (TFTs) have been fabricated with two-dimensional (2-D) location-controlled grain boundaries using excimer laser crystallization (ELC). By locally increased thickness of the amorphous silicon (a-Si) film that was served as the seed crystals with a partial-melting crystallization scheme, the cross-shaped grain boundary structures were produced between the thicker a-Si grids. The Poly-Si TFTs with one parallel and one perpendicular grain boundary along the channel direction could therefore be fabricated to reach excellent field-effect mobility of 530 cm2/V-s while the conventional ones exhibited field-effect mobility of 198 cm2/V-s. Furthermore, the proposed TFTs achieved not only superior electric properties but also improved uniformity as compared with the conventional ones owing to the artificially controlled locations of grain boundaries.

  2. Charge retention characteristics of silicide-induced crystallized polycrystalline silicon floating gate thin-film transistors for active matrix organic light-emitting diode.

    PubMed

    Park, Jae Hyo; Son, Se Wan; Byun, Chang Woo; Kim, Hyung Yoon; Joo, So Na; Lee, Yong Woo; Yun, Seung Jae; Joo, Seung Ki

    2013-10-01

    In this work, non-volatile memory thin-film transistor (NVM-TFT) was fabricated by nickel silicide-induced laterally crystallized (SILC) polycrystalline silicon (poly-Si) as the active layer. The nickel seed silicide-induced crystallized (SIC) poly-Si was used as storage layer which is embedded in the gate insulator. The novel unit pixel of active matrix organic light-emitting diode (AMOLED) using NVM-TFT is proposed and investigated the electrical and optical performance. The threshold voltage shift showed 17.2 V and the high reliability of retention characteristic was demonstrated until 10 years. The retention time can modulate the recharge refresh time of the unit pixel of AMOLED up to 5000 sec.

  3. Controllability of self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors on a glass substrate

    NASA Astrophysics Data System (ADS)

    Ohsawa, Hiroki; Sasaki, Shun; Hara, Akito

    2016-03-01

    Self-aligned four-terminal n-channel (n-ch) and p-channel (p-ch) planar embedded metal double-gate polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at a low temperature of 550 °C. This device includes a metal top gate (TG) and a metal bottom gate (BG), which are used as the drive and control gates or vice versa. The BG was embedded in a glass substrate, and a poly-Si channel with large lateral grains was fabricated by continuous-wave laser lateral crystallization. The threshold voltage modulation factors under various control gate voltages (γ = ΔVth/ΔVCG) were nearly equal to the theoretical predictions in both the n- and p-ch TFTs. By exploiting this high controllability, an enhancement depletion (ED) inverter was fabricated, and successful operation at 2.0 V was confirmed.

  4. Structural, optical and Raman scattering studies on polycrystalline Cd 0.8Zn 0.2Te thin films prepared by vacuum evaporation

    NASA Astrophysics Data System (ADS)

    Prabakar, K.; Narayandass, Sa. K.; Mangalaraj, D.

    2003-05-01

    Cd 0.8Zn 0.2Te polycrystalline thin films were grown onto well-cleaned corning glass substrates at room temperature by vacuum evaporation. The optical response of vacuum-evaporated Cd 0.8Zn 0.2Te films in the 1.5-5.5 eV photon energy range at room temperature has been studied by spectroscopic ellipsometry. The measured dielectric-function spectra reveal distinct structures at critical point energies E1, E1+ Δ1 and E2 corresponding to the interband transitions. X-ray diffraction pattern showed that the incorporation of zinc favours the growth of films preferentially oriented parallel to the (1 1 1) planes of cubic CdTe. Due to the film's sensitivity to the local atomic order, the samples were studied by Raman spectroscopy. The transverse and longitudinal optic modes regularly found in CdTe were also observed in Cd 0.8Zn 0.2Te thin films. It was observed that the incorporation of Zn could not avoid the formation of Te precipitates, which are commonly detected in CdTe thin films and bulk samples. From the optical transmittance and absorption coefficient, the band gap of the films is found to be direct allowed and the energy is estimated as 1.6 eV.

  5. Impact of the n+ emitter layer on the structural and electrical properties of p-type polycrystalline silicon thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Kumar, A.; Hidayat, H.; Ke, C.; Chakraborty, S.; Dalapati, G. K.; Widenborg, P. I.; Tan, C. C.; Dolmanan, S.; Aberle, A. G.

    2013-10-01

    The effect of the phosphine (PH3) flow rate on the doping profile, in particular the peak doping concentration of the n+ emitter layer, of solid phase crystallised polycrystalline silicon thin-film solar cells on glass is investigated by electrochemical capacitance-voltage profiling. The peak n+ layer doping is found to increase with increasing PH3 gas flow, resulting in a shift of the p-n junction location towards the centre of the diode. The impact of the PH3 flow rate on the crystal quality of the poly-Si films is analysed using ultraviolet (UV) reflectance and UV/visible Raman spectroscopy. The impact of the PH3 flow rate on the efficiency of poly-Si thin-film solar cells is investigated using electrical measurements. An improvement in the efficiency by 46% and a pseudo energy conversion efficiency of 5% was obtained through precise control of the flow rate at an intermediate n+ emitter layer doping concentration of 1.0 × 1019 cm-3. The best fabricated poly-Si thin-film solar cell is also found to have the highest crystal quality factor, based on both Raman and UV reflectance measurements.

  6. Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

    DOEpatents

    Findikoglu, Alp T.; Jia, Quanxi; Arendt, Paul N.; Matias, Vladimir; Choi, Woong

    2009-10-27

    A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

  7. Calculating Optical Absorption Spectra of Thin Polycrystalline Organic Films: Structural Disorder and Site-Dependent van der Waals Interaction

    PubMed Central

    2015-01-01

    We propose a new approach for calculating the change of the absorption spectrum of a molecule when moved from the gas phase to a crystalline morphology. The so-called gas-to-crystal shift Δm is mainly caused by dispersion effects and depends sensitively on the molecule’s specific position in the nanoscopic setting. Using an extended dipole approximation, we are able to divide Δm= −QWm in two factors, where Q depends only on the molecular species and accounts for all nonresonant electronic transitions contributing to the dispersion while Wm is a geometry factor expressing the site dependence of the shift in a given molecular structure. The ability of our approach to predict absorption spectra is demonstrated using the example of polycrystalline films of 3,4,9,10-perylenetetracarboxylic diimide (PTCDI). PMID:25834658

  8. Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor

    SciTech Connect

    Hashimoto, Masaki; Kanomata, Kensaku; Momiyama, Katsuaki; Kubota, Shigeru; Hirose, Fumihiko

    2012-01-09

    In this study, we developed a measurement method for field-effect-carrier mobility across a single grain boundary in polycrystalline Si (poly Si) used for solar cell production by using an organic gate field-effect transistor (FET). To prevent precipitation and the diffusion of impurities affecting the electronic characteristics of the grain boundary, all the processing temperatures during FET fabrication were held below 150 deg. C. From the grain boundary, the field-effect mobility was measured at around 21.4 cm{sup 2}/Vs at 297 K, and the temperature dependence of the field-effect mobility suggested the presence of a potential barrier of 0.22 eV at the boundary. The technique presented here is applicable for the monitoring of carrier conduction characteristics at the grain boundary in poly Si used for the production of solar cells.

  9. Photovoltaic mechanisms in polycrystalline thin film silicon solar cells. Quarterly technical progress report No. 1, July 30-October 31, 1980

    SciTech Connect

    Sopori, B.

    1980-07-30

    Major accomplishments during the first quarter of the contract period are reported. Small area diode fabrication and analysis has been continued. This technique has further been applied to many RTR ribbons. An optical technique for determination of crystallite orientations has been placed in operation. This technique has many distinct advantages. These are: (1) rapid; (2) can be set-up very inexpensively; (3) well suited for polycrystalline substrates of small grain size; and (4) can easily characterize twins. Accuracies obtained with this technique are about the same as that of the Laue technique. A technique to qualitatively evaluate grain boundary activity in unprocessed substrates has been used and valuable results obtained. Further analysis is being done to use this technique for quantitative evaluation. A major study of G.B. orientation effects is underway. Initial results on RTR ribbons have shown a good correlation of G.B. barrier height with misorientation (tilt boundaries).

  10. Calculating Optical Absorption Spectra of Thin Polycrystalline Organic Films: Structural Disorder and Site-Dependent van der Waals Interaction.

    PubMed

    Megow, Jörg; Körzdörfer, Thomas; Renger, Thomas; Sparenberg, Mino; Blumstengel, Sylke; Henneberger, Fritz; May, Volkhard

    2015-03-12

    We propose a new approach for calculating the change of the absorption spectrum of a molecule when moved from the gas phase to a crystalline morphology. The so-called gas-to-crystal shift Δ[Formula: see text] m is mainly caused by dispersion effects and depends sensitively on the molecule's specific position in the nanoscopic setting. Using an extended dipole approximation, we are able to divide Δ[Formula: see text] m = -QWm in two factors, where Q depends only on the molecular species and accounts for all nonresonant electronic transitions contributing to the dispersion while Wm is a geometry factor expressing the site dependence of the shift in a given molecular structure. The ability of our approach to predict absorption spectra is demonstrated using the example of polycrystalline films of 3,4,9,10-perylenetetracarboxylic diimide (PTCDI).

  11. Photovoltaic mechanisms in polycrystalline thin film silicon solar cells. Final report, 30 June 1979-29 June 1980

    SciTech Connect

    Sopori, B.L.

    1980-11-01

    The objectives of this program were: (1) to develop appropriate measurement techniques to facilitate a quantitative study of the electrical activity of structural defects and at a grain boundary (G.B.) in terms of generation-recombination, barrier height, and G.B. conductivity; (2) to characterize G.B.s in terms of physical properties such as angle of misfit and local stress, and to correlate them with the electrical activity; (3) to determine the influence of solar cell processing on the electrical behavior of structural defects and G.B.s; and (4) to evaluate polycrystalline solar cell performance based on the above study, and to compare it with the experimentally measured performance. Progress is reported in detail. (WHK)

  12. Temperature- and doping-concentration-dependent characteristics of junctionless gate-all-around polycrystalline-silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Tso, Chia-Tsung; Liu, Tung-Yu; Pan, Fu-Ming; Sheu, Jeng-Tzong

    2017-04-01

    The temperature effects of both gate-all-around polycrystalline silicon nanowire (GAA poly-Si NW) junctionless (JL) and inversion mode (IM) transistor devices at various temperatures (77–410 K) were investigated. The electrical characteristics of these devices, such as subthreshold swing (SS), threshold voltage (V th), and drain-induced barrier lowering (DIBL), were also characterized and compared in this study. Moreover, JL devices with different doping concentrations at various temperatures were also discussed. Both V th and I on showed significant doping concentration dependences for JL devices with doping concentrations of 1 × 1019 and 5 × 1019 cm‑3. However, the electrical characteristics of JL devices showed less thermal sensitivity when the doping concentration reached 1020 cm‑3.

  13. Quantitative evaluation of sputtering induced surface roughness and its influence on AES depth profiles of polycrystalline Ni/Cu multilayer thin films

    NASA Astrophysics Data System (ADS)

    Yan, X. L.; Coetsee, E.; Wang, J. Y.; Swart, H. C.; Terblans, J. J.

    2017-07-01

    The polycrystalline Ni/Cu multilayer thin films consisting of 8 alternating layers of Ni and Cu were deposited on a SiO2 substrate by means of electron beam evaporation in a high vacuum. Concentration-depth profiles of the as-deposited multilayered Ni/Cu thin films were determined with Auger electron spectroscopy (AES) in combination with Ar+ ion sputtering, under various bombardment conditions with the samples been stationary as well as rotating in some cases. The Mixing-Roughness-Information depth (MRI) model used for the fittings of the concentration-depth profiles accounts for the interface broadening of the experimental depth profiling. The interface broadening incorporates the effects of atomic mixing, surface roughness and information depth of the Auger electrons. The roughness values extracted from the MRI model fitting of the depth profiling data agrees well with those measured by atomic force microscopy (AFM). The ion sputtering induced surface roughness during the depth profiling was accordingly quantitatively evaluated from the fitted MRI parameters with sample rotation and stationary conditions. The depth resolutions of the AES depth profiles were derived directly from the values determined by the fitting parameters in the MRI model.

  14. Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

    NASA Astrophysics Data System (ADS)

    Tarasov, I. A.; Visotin, M. A.; Aleksandrovsky, A. S.; Kosyrev, N. N.; Yakovlev, I. A.; Molokeev, M. S.; Lukyanenko, A. V.; Krylov, A. S.; Fedorov, A. S.; Varnakov, S. N.; Ovchinnikov, S. G.

    2017-10-01

    This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition ( 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of 0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of 0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.

  15. Planar-orientation polycrystalline thin film of liquid-crystalline organic semiconductor by template-directed self-assembly

    NASA Astrophysics Data System (ADS)

    Wang, Yi-Fei; Iino, Hiroaki; Hanna, Jun-ichi

    2017-10-01

    We fabricated planar-orientation crystalline thin films of organic semiconductors, in which molecules sit parallel, i.e., “face-on”, on the substrate and favor vertical charge transport. Thanks to molecular orientation that is sensitive to surface properties and the self-organization of liquid crystals, planar-orientation crystalline thin films can be prepared by simply cooling a smectic liquid-crystalline organic semiconductor from isotropic temperature with the aid of a poly(vinyl alcohol) (PVA) microtemplate. The molecular orientation of crystalline thin films was investigated by polarized optical microscopy (POM) and X-ray diffraction (XRD) analysis, and the current–voltage characteristics of the films were studied in a diode configuration. The results showed high potential for device applications.

  16. Polycrystalline ZnTe thin film on silicon synthesized by pulsed laser deposition and subsequent pulsed laser melting

    NASA Astrophysics Data System (ADS)

    Xu, Menglei; Gao, Kun; Wu, Jiada; Cai, Hua; Yuan, Ye; Prucnal, S.; Hübner, R.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

    2016-03-01

    ZnTe thin films on Si substrates have been prepared by pulsed laser deposition and subsequent pulsed laser melting (PLM) treatment. The crystallization during PLM is confirmed by Raman scattering, x-ray diffraction and room temperature photoluminescence (PL) measurements. The PL results show a broad peak at 574 nm (2.16 eV), which can be assigned to the transitions from the conduction band to the acceptor level located at 0.145 eV above the valence band induced by zinc-vacancy ionization. Our work provides an applicable approach to low temperature preparation of crystalline ZnTe thin films.

  17. Effect of substrates on structural, optical, electrical and morphological properties of evaporated polycrystalline CdZnTe thin films

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Purohit, A.; Patel, S. L.; Dhaka, M. S.

    2017-05-01

    It is well known fact that the physical properties of a thin film could be tuned by substrate during deposition process. Therefore, a study on the effect of substrates on structural and opto-electrical properties and surface morphology of CdZnTe thin films (400 nm) deposited by electron beam evaporation onto commercial glass, indium tin oxide (ITO) and silicon wafer, has been undertaken. The films exhibited zinc-blende structure and grain size as well as other structural parameters (i.e. internal strain, dislocation density, lattice constant) were found to be affected by the nature of substrates. The optical band gap was found in the range 2.06-2.33 eV and depended on the substrates while the electrical conductivity was observed maximum for films on ITO substrate. The surface morphology of films was also found to be uniform and homogeneous.

  18. Origins of electrostatic potential wells at dislocations in polycrystalline Cu(In,Ga)Se{sub 2} thin films

    SciTech Connect

    Dietrich, J.; Abou-Ras, D. Schmidt, S. S.; Rissom, T.; Unold, T.; Cojocaru-Mirédin, O.; Niermann, T.; Lehmann, M.; Koch, C. T.; Boit, C.

    2014-03-14

    Thin-film solar cells based on Cu(In,Ga)Se{sub 2} (CIGSe) reach high power-conversion efficiencies in spite of large dislocation densities of up to 10{sup 10}–10{sup 11} cm{sup −2}. The present work gives insight into the structural and compositional properties of dislocations in CIGSe thin films, which are embedded in a complete solar cell stack. These properties are related to the average electrical potential distributions obtained by means of inline electron holography. At a part of the dislocations studied, the average electrostatic potential shows local minima, all with depths of about −1.4 V. The measured average electrostatic potential distributions were modeled in order to reveal possible influences from strain fields, excess charge, and also compositional changes at the dislocation core. Cu depletion around the dislocation core, as evidenced by atom-probe tomography, explains best the measured potential wells. Their influences of the strain field around the dislocation core and of excess charge at the dislocation core are small. A structural model of dislocations in CIGSe thin films is provided which includes a Cu-depleted region around the dislocation core and gives a possible explanation for why decent photovoltaic performances are possible in the presence of rather large dislocation densities.

  19. Origins of electrostatic potential wells at dislocations in polycrystalline Cu(In,Ga)Se2 thin films

    NASA Astrophysics Data System (ADS)

    Dietrich, J.; Abou-Ras, D.; Schmidt, S. S.; Rissom, T.; Unold, T.; Cojocaru-Mirédin, O.; Niermann, T.; Lehmann, M.; Koch, C. T.; Boit, C.

    2014-03-01

    Thin-film solar cells based on Cu(In,Ga)Se2 (CIGSe) reach high power-conversion efficiencies in spite of large dislocation densities of up to 1010-1011 cm-2. The present work gives insight into the structural and compositional properties of dislocations in CIGSe thin films, which are embedded in a complete solar cell stack. These properties are related to the average electrical potential distributions obtained by means of inline electron holography. At a part of the dislocations studied, the average electrostatic potential shows local minima, all with depths of about -1.4 V. The measured average electrostatic potential distributions were modeled in order to reveal possible influences from strain fields, excess charge, and also compositional changes at the dislocation core. Cu depletion around the dislocation core, as evidenced by atom-probe tomography, explains best the measured potential wells. Their influences of the strain field around the dislocation core and of excess charge at the dislocation core are small. A structural model of dislocations in CIGSe thin films is provided which includes a Cu-depleted region around the dislocation core and gives a possible explanation for why decent photovoltaic performances are possible in the presence of rather large dislocation densities.

  20. Biaxial Stress-Induced Domain Wall Motion at Room Temperature in Polycrystalline Lead Zirconium Titanate Thin Films

    NASA Astrophysics Data System (ADS)

    Zednik, Ricardo; McIntyre, Paul

    2007-03-01

    Wafer curvature methods can be used to impose pure biaxial tensile and compressive stresses on thin-films. This makes it possible to study the isolated effects of biaxial stress on the ferroelastic domains in ultra-fine grained PZT. Electrical measurements, such as capacitance-voltage and polarization-field hysteresis, were conducted as a function of applied stress and complemented with in-situ high resolution synchrotron X-ray diffraction measurements performed at the Stanford Synchrotron Radiation Laboratory. Systematic correlation of synchrotron scattering data with the electrical properties of the films shows that applied biaxial stress results in a marked change in the film's ferroelastic domain populations at room temperature. The large magnitude changes in ferroelectric and dielectric properties of thin film capacitors are consistent with the observed changes in relative volume fractions of the in-plane (a-axis) and out-of-plane (c-axis) oriented tetragonal PZT domains. This fully-reversible effect is symmetric in both tensile and compressive stress states. Our results, obtained from columnar-structure, fiber-textured PZT thin films, will be compared to reported data for ferroelastic domain wall motion in bulk and epitaxial specimens to assess the influence of PZT crystallite size and sample geometry on this phenomenon.

  1. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors

    PubMed Central

    El-Mohri, Youcef; Antonuk, Larry E.; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A.; Lu, Jeng-Ping

    2009-01-01

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and∕or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of ∼10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical fill

  2. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors.

    PubMed

    El-Mohri, Youcef; Antonuk, Larry E; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A; Lu, Jeng-Ping

    2009-07-01

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and/or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of approximately 10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in

  3. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors

    SciTech Connect

    El-Mohri, Youcef; Antonuk, Larry E.; Koniczek, Martin; Zhao Qihua; Li Yixin; Street, Robert A.; Lu Jengping

    2009-07-15

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and/or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of {approx}10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical

  4. Examination of a polycrystalline thin-film model to explore the relation between probe size and structural correlation length in fluctuation electron microscopy.

    PubMed

    Treacy, M M J; Gibson, J M

    2012-02-01

    We examine simulated electron microdiffraction patterns from models of thin polycrystalline silicon. The models are made by a Voronoi tessellation of random points in a box. The Voronoi domains are randomly selected to contain either a randomly-oriented cubic crystalline grain or a region of continuous random network material. The microdiffraction simulations from coherent probes of different widths are computed at the ideal kinematical limit, ignoring inelastic and multiple scattering. By examining the normalized intensity variance that is obtained in fluctuation electron microscopy experiments, we confirm that intensity fluctuations increase monotonically with the percentage of crystalline grains in the material. However, anomalously high variance is observed for models that have 100% crystalline grains with no imperfections. We confirm that the reduced normalized variance, V(k,R) - 1, that is associated with four-body correlations at scattering vector k, varies inversely with specimen thickness. Further, for probe sizes R larger than the mean grain size, we confirm that the reduced normalized variance obeys the predicted form given by Gibson et al. [Ultramicroscopy, 83, 169-178 (2000)] for the kinematical coherent scattering limit.

  5. Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.

    PubMed

    Chen, Bo-Wei; Chang, Ting-Chang; Chang, Kuan-Chang; Hung, Yu-Ju; Huang, Shin-Ping; Chen, Hua-Mao; Liao, Po-Yung; Lin, Yu-Ho; Huang, Hui-Chun; Chiang, Hsiao-Cheng; Yang, Chung-I; Zheng, Yu-Zhe; Chu, Ann-Kuo; Li, Hung-Wei; Tsai, Chih-Hung; Lu, Hsueh-Hsing; Wang, Terry Tai-Jui; Chang, Tsu-Chiang

    2017-04-05

    The surface morphology in polycrystalline silicon (poly-Si) film is an issue regardless of whether conventional excimer laser annealing (ELA) or the newer metal-induced lateral crystallization (MILC) process is used. This paper investigates the stress distribution while undergoing long-term mechanical stress and the influence of stress on electrical characteristics. Our simulated results show that the nonuniform stress in the gate insulator is more pronounced near the polysilicon/gate insulator edge and at the two sides of the polysilicon protrusion. This stress results in defects in the gate insulator and leads to a nonuniform degradation phenomenon, which affects both the performance and the reliability in thin-film transistors (TFTs). The degree of degradation is similar regardless of bending axis (channel-length axis, channel-width axis) or bending type (compression, tension), which means that the degradation is dominated by the protrusion effects. Furthermore, by utilizing long-term electrical bias stresses after undergoing long-tern bending stress, it is apparent that the carrier injection is severe in the subchannel region, which confirms that the influence of protrusions is crucial. To eliminate the influence of surface morphology in poly-Si, three kinds of laser energy density were used during crystallization to control the protrusion height. The device with the lowest protrusions demonstrates the smallest degradation after undergoing long-term bending.

  6. Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Hishitani, Daisuke; Horita, Masahiro; Ishikawa, Yasuaki; Ikenoue, Hiroshi; Uraoka, Yukiharu

    2017-05-01

    The formation of perhydropolysilazane (PHPS)-based SiO2 films by CO2 laser annealing is proposed. Irradiation with a CO2 laser with optimum fluence transformed a prebaked PHPS film into a SiO2 film with uniform composition in the thickness direction. Polycrystalline silicon thin-film transistors (poly-Si TFTs) with a SiO2 film as the gate insulator were fabricated. When the SiO2 film was formed by CO2 laser annealing (CO2LA) at the optimum fluence of 20 mJ/cm2, the film had fewer OH groups which was one-twentieth that of the furnace annealed PHPS film and one-hundredth that of the SiO2 film deposited by plasma-enhanced chemical vapor deposition (PECVD) using tetraethyl orthosilicate (TEOS). The resulting TFTs using PHPS showed a clear transistor operation with a field-effect mobility of 37.9 ± 1.2 cm2 V-1 s-1, a threshold voltage of 9.8 ± 0.2 V, and a subthreshold swing of 0.76 ± 0.02 V/decade. The characteristics of such TFTs were as good as those of a poly-Si TFT with a SiO2 gate insulator prepared by PECVD using TEOS.

  7. Abnormal Threshold Voltage Shifts in P-Channel Low-Temperature Polycrystalline Silicon Thin Film Transistors Under Negative Bias Temperature Stress.

    PubMed

    Kim, Sang Sub; Choi, Pyung Ho; Baek, Do Hyun; Lee, Jae Hyeong; Choi, Byoung Deog

    2015-10-01

    In this research, we have investigated the instability of P-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS TFTs) with double-layer SiO2/SiNx dielectrics. A negative gate bias temperature instability (NBTI) stress was applied and a turn-around behavior phenomenon was observed in the Threshold Voltage Shift (Vth). A positive threshold voltage shift occurs in the first stage, resulting from the negative charge trapping at the SiNx/SiO2 dielectric interface being dominant over the positive charge trapping at dielectric/Poly-Si interface. Following a stress time of 7000 s, the Vth switches to the negative voltage direction, which is "turn-around" behavior. In the second stage, the Vth moves from -1.63 V to -2 V, overwhelming the NBTI effect that results in the trapping of positive charges at the dielectric/Poly-Si interface states and generating grain-boundary trap states and oxide traps.

  8. Atomic-resolution study of dislocation structures and interfaces in poly-crystalline thin film CdTe using aberration-corrected STEM

    NASA Astrophysics Data System (ADS)

    Paulauskas, Tadas; Colegrove, Eric; Buurma, Chris; Kim, Moon; Klie, Robert

    2014-03-01

    Commercial success of CdTe-based thin film photovoltaic devices stems from its nearly ideal direct band gap which very effectively couples to Sun's light spectrum as well as ease of manufacturing and low cost of these modules. However, to further improve the conversion efficiency beyond 20 percent, it is important to minimize the harmful effects of grain boundaries and lattice defects in CdTe. Direct atomic-scale characterization is needed in order identify the carrier recombination centers. Likewise, it is necessary to confirm that passivants in CdTe, such as Cl, are able to diffuse and bind to the target defects. In this study, we characterize dislocation structures and grain boundaries in poly-crystalline CdTe using aberration-corrected cold-field emission scanning transmission electron microscopy (STEM). The chemical composition of Shockley partial, Frank and Lomer-Cottrell dislocations is examined via atomic column-resolved X-ray energy dispersive (XEDS) and electron energy-loss spectroscopies (EELS). Segregation of Cl towards dislocation cores and grain boundaries is shown in CdCl2 treated samples. We also investigate interfaces in ultra-high-vacuum bonded CdTe bi-crystals with pre-defined misorientation angles which are intended to mimic grain boundaries. Funded by: DOE EERE Sunshot Award EE0005956.

  9. Evaluation of Electrical Characteristics and Trap-State Density in Bottom-Gate Polycrystalline Thin Film Transistors Processed with High-Pressure Water Vapor Annealing

    NASA Astrophysics Data System (ADS)

    Kunii, Masafumi

    2006-02-01

    This paper discusses electrical characteristics and trap-state density in polycrystalline silicon (poly-Si) used in bottom-gate poly-Si thin film transistors (TFTs) processed with high-pressure water vapor annealing (HWA). The threshold voltage uniformity of the HWA-processed TFTs is improved by 42% for N-channel and 38% for P-channel TFTs in terms of standard deviation, and carrier mobility is enhanced by 10% or greater for both N- and P-channel TFTs than those TFTs processed conventionally. Subthreshold swing is also improved by HWA, showing that HWA postannealing is effective for improving the Si/SiO2 interface of the bottom-gate TFTs. Two types of TFTs having different poly-Si crystallinities are examined to investigate carrier transport in poly-Si processed by HWA postannealing. The evaluation of trap-state density for the two types of poly-Si reveals that HWA postannealing is more efficient for N-channel than for P-channel TFTs. Furthermore, HWA postannealing is more effective for poly-Si with high crystallinity to improve TFT characteristics. The analysis of the trap-state distributions and the activation energy of TFT drain current indicate that HWA deactivates dangling bonds highly localized at poly-Si grain boundaries (GBs). Thus, HWA postannealing effects can be interpreted by a GB barrier potential model similar to that applied to conventional hydrogenation.

  10. Effects of gate insulator using high pressure annealing on the characteristics of solid phase crystallized polycrystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Moojin; Jin, GuangHai

    2009-04-01

    The oxidizing ambient was built using high pressure H2O vapor at 550 °C. For the solid phase crystallization (SPC) polycrystalline silicon (poly-Si) that is annealed for 1 h at 2 MPa, the oxide thickness is about 150 Å. The oxide layer is approximately 90 Å above the original surface of the poly-Si and 60 Å below the original surface. The oxide layer is used as the first gate insulator layer of thin-film transistors (TFTs). The heating at 550 °C with 2 MPa H2O vapor increased the carrier mobility from 17.6 cm2/V s of the conventional SPC process to 30.4 cm2/V s, and it reduced the absolute value of the threshold voltage (Vth) from 4.13 to 3.62 V. The subthreshold swing also decreased from 0.72 to 0.60 V/decade. This improvement is attributed mainly to the reduction in defect density at the oxide/poly-Si interface and in the poly-Si film by the high pressure annealing (HPA) process. Since the realization of excellent performance at the oxide/poly-Si interface and in poly-Si depends on the defect density, the poly-Si having the thermal oxide formed by a combined process of SPC and HPA may be well suited for fabrication of poly-Si TFTs for flat panel displays such as active matrix organic light emitting diodes.

  11. Development of active matrix flat panel imagers incorporating thin layers of polycrystalline HgI(2) for mammographic x-ray imaging.

    PubMed

    Jiang, Hao; Zhao, Qihua; Antonuk, Larry E; El-Mohri, Youcef; Gupta, Tapan

    2013-02-07

    Active matrix flat-panel imagers (AMFPIs) offer many advantages and have become ubiquitous across a wide variety of medical x-ray imaging applications. However, for mammography, the imaging performance of conventional AMFPIs incorporating CsI:Tl scintillators or a-Se photoconductors is limited by their relatively modest signal-to-noise ratio (SNR), particularly at low x-ray exposures or high spatial resolution. One strategy for overcoming this limitation involves the use of a high gain photoconductor such as mercuric iodide (HgI(2)) which has the potential to improve the SNR by virtue of its low effective work function (W(EFF)). In this study, the performance of direct-detection AMFPI prototypes employing relatively thin layers of polycrystalline HgI(2) operated under mammographic irradiation conditions over a range of 0.5 to 16.0 mR is presented. High x-ray sensitivity (corresponding to W(EFF) values of ∼19 eV), low dark current (<0.1 pA mm(-2)) and good spatial resolution, largely limited by the size of the pixel pitch, were observed. For one prototype, a detective quantum efficiency of ∼70% was observed at an x-ray exposure of ∼0.5 mR at 26 kVp.

  12. Effect of growth parameters on the structure and magnetic properties of thin polycrystalline Fe films fabricated on Si<1 0 0> substrates

    NASA Astrophysics Data System (ADS)

    Javed, A.; Morley, N. A.; Gibbs, M. R. J.

    2011-04-01

    This paper deals with the experimental investigation of the structure and magnetic properties of thin polycrystalline Fe films. Two sets of 50 ± 2 nm thick Fe films were fabricated on Si<1 0 0> substrates with native oxides in place by varying (i) the sputter pressure pAr and (ii) the Fe sputter power PFe. X-ray diffraction (XRD) study revealed that all films grew with strong <1 1 0> texture normal to the film plane. No higher order peaks were observed in any of the films studied. For both film sets, the lattice constant (a) was less than the bulk Fe lattice constant (a0 = 2.866 Å), which suggested the existence of compressive strain in all films. Two regions of homogeneous strain were observed over the range of pAr studied. Magneto-optical Kerr effect (MOKE) measurements showed that all films exhibited magnetically isotropic behaviour. The magnetic properties were observed to be influenced strongly by pAr. The film grown at pAr = 4 μbar was the most softest (Hs = 100 ± 8 kA m-1, Mr/Ms = 0.87 ± 0.02) film among all the films studied. The magnetic properties were found to be independent of PFe. The effective saturation magnetostriction constant λeff determined (using the Villari method) was positive (4 ± 1 ppm) and observed to vary within the calculated error.

  13. Superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} thin films on polycrystalline ferrite for magnetically tunable microwave components

    SciTech Connect

    Jia, Q.X.; Findikoglu, A.T.; Arendt, P.; Foltyn, S.R.; Roper, J.M.; Groves, J.R.; Coulter, J.Y.; Li, Y.Q.; Dionne, G.F.

    1998-04-01

    Superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO) thin films with a surface resistance of 0.86 m{Omega} at 10 GHz and 76 K have been grown on polycrystalline ferrite yttrium iron garnet (YIG) substrates. The chemical and structural mismatches between YBCO and YIG are solved by using a double buffer layer of biaxially oriented yttria-stabilized zirconia (YSZ) and CeO{sub 2}, where YSZ is deposited by an ion-beam-assisted-deposition technique. The YBCO films are {ital c} axis oriented with an in-plane mosaic spread [full width at half maximum of an x-ray {phi}-scan on (103) reflection] of less than 8{degree}. The films have a superconductive transition temperature above 88 K with a transition width less than 0.3 K, giving a critical current density above 10{sup 6}A/cm{sup 2} in self field at 75 K. At 75 K in an external magnetic field of 1 T perpendicular to the film surface, the films maintain a critical current density over 2{times}10{sup 5}A/cm{sup 2}. {copyright} {ital 1998 American Institute of Physics.}

  14. Preparation of translucent Gd2Si2O7:Ce polycrystalline thin plates and their scintillation performance for α-particles

    NASA Astrophysics Data System (ADS)

    Nishikata, Mami; Ueda, Aki; Higuchi, Mikio; Kaneko, Junichi H.; Tsubota, Youichi; Ishibashi, Hiroyuki

    2015-07-01

    Translucent Gd2Si2O7:Ce (GPS:Ce) polycrystalline plates were prepared via liquid-phase sintering using SiO2 as a self-flux, and their scintillation performances for α-particles were investigated. Dense sintered compacts comprising large grains, some of which were larger than 100 μm in diameter, were successfully prepared by sintering at 1690 °C for 100 h. The best result was obtained with the powder comprising only <40 μm particles. Any combination of powders of <40 μm and <15 μm resulted in inhomogeneous structures with smaller grains of about 50 μm. A translucent GPS:Ce thin plate was fabricated by grinding the sintered compact that contained excess SiO2 of 8 mol%. Since the plate was composed of large grains, scattering at the grain boundaries was effectively suppressed and many of the grains virtually act as single crystals when the plate thickness was less than 100 μm. Therefore, the decrease in the plate thickness brought increase in the total transmission, and light yield and energy resolution were consequently improved. When the plate thickness was 50 μm, light yield was 82% as compared with that of a GPS:Ce single crystal as a reference, and energy resolution attained to 13%.

  15. Chemical speciation at buried interfaces in high-temperature processed polycrystalline silicon thin-film solar cells on ZnO:Al

    NASA Astrophysics Data System (ADS)

    Becker, Christiane; Pagels, Marcel; Zachäus, Carolin; Pollakowski, Beatrix; Beckhoff, Burkhard; Kanngießer, Birgit; Rech, Bernd

    2013-01-01

    The combination of polycrystalline silicon (poly-Si) thin films with aluminum doped zinc oxide layers (ZnO:Al) as transparent conductive oxide enables the design of appealing optoelectronic devices at low costs, namely in the field of photovoltaics. The fabrication of both thin-film materials requires high-temperature treatments, which are highly desired for obtaining a high electrical material quality. Annealing procedures are typically applied during crystallization and defect-healing processes for silicon and can boost the carrier mobility and conductivity of ZnO:Al layers. In a combined poly-Si/ZnO:Al layer system, an in-depth knowledge of the interaction of both layers and the control of interface reactions upon thermal treatments is crucial. Therefore, we analyze the influence of rapid thermal treatments up to 1050 °C on solid phase crystallized poly-Si thin-film solar cells on ZnO:Al-coated glass, focusing on chemical interface reactions and modifications of the poly-Si absorber material quality. The presence of a ZnO:Al layer in the solar cell stack was found to limit the poly-Si solar cell performance with open circuit voltages only below 390 mV (compared to 435 mV without ZnO film), even if a silicon nitride (SiN) diffusion barrier was included. A considerable amount of diffused zinc inside the silicon was observed. By grazing-incidence X-ray fluorescence spectrometry, a depth-resolving analysis of the elemental composition close to the poly-Si/(SiN)/ZnO:Al interface was carried out. Temperatures above 1000 °C were found to promote the formation of new chemical compounds within about 10 nm of interface, such as zinc silicates (Zn2SiO4) and aluminium oxide (AlxOy). These results give valuable insights about the temperature-limitations of Si/ZnO thin-film solar cell fabrication and the formation of high-mobility ZnO-layers by thermal anneal.

  16. Exploration of maximum count rate capabilities for large-area photon counting arrays based on polycrystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua

    2016-03-01

    Pixelated photon counting detectors with energy discrimination capabilities are of increasing clinical interest for x-ray imaging. Such detectors, presently in clinical use for mammography and under development for breast tomosynthesis and spectral CT, usually employ in-pixel circuits based on crystalline silicon - a semiconductor material that is generally not well-suited for economic manufacture of large-area devices. One interesting alternative semiconductor is polycrystalline silicon (poly-Si), a thin-film technology capable of creating very large-area, monolithic devices. Similar to crystalline silicon, poly-Si allows implementation of the type of fast, complex, in-pixel circuitry required for photon counting - operating at processing speeds that are not possible with amorphous silicon (the material currently used for large-area, active matrix, flat-panel imagers). The pixel circuits of two-dimensional photon counting arrays are generally comprised of four stages: amplifier, comparator, clock generator and counter. The analog front-end (in particular, the amplifier) strongly influences performance and is therefore of interest to study. In this paper, the relationship between incident and output count rate of the analog front-end is explored under diagnostic imaging conditions for a promising poly-Si based design. The input to the amplifier is modeled in the time domain assuming a realistic input x-ray spectrum. Simulations of circuits based on poly-Si thin-film transistors are used to determine the resulting output count rate as a function of input count rate, energy discrimination threshold and operating conditions.

  17. Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

    SciTech Connect

    Yun, J. Varalmov, S.; Huang, J.; Green, M. A.; Kim, K.

    2014-06-16

    The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-μm thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550 °C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450 °C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550 °C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450 °C, which limits the solar cell performance by n = 2 recombination, and a performance degradation is expected due to severe shunting.

  18. In-situ investigation of thermal instabilities and solid state dewetting in polycrystalline platinum thin films via confocal laser microscopy

    SciTech Connect

    Jahangir, S.; Cheng, Xuan; Huang, H. H.; Nagarajan, V.; Ihlefeld, J.

    2014-10-28

    Solid state dewetting and the subsequent morphological changes for platinum thin films grown on zinc oxide (ZnO) buffered (001) silicon substrates (Pt/ZnO/SiO{sub 2}/(001)Si system) is investigated under vacuum conditions via a custom-designed confocal laser microscope coupled with a laser heating system. Live imaging of thin film dewetting under a range of heating and quenching vacuum ambients reveals events including hillock formation, hole formation, and hole growth that lead to formation of a network of Pt ligaments, break up of Pt ligaments to individual islands and subsequent Pt islands shape reformation, in chronological fashion. These findings are corroborated by ex-situ materials characterization and quantitative electron microscopy analysis. A secondary hole formation via blistering before film rupture is revealed to be the critical stage, after which a rapid dewetting catastrophe occurs. This process is instantaneous and cannot be captured by ex-situ methods. Finally, an intermetallic phase forms at 900 °C and alters the morphology of Pt islands, suggesting a practical limit to the thermal environments that may be used for these platinized silicon wafers in vacuum conditions.

  19. Hysteresis in single and polycrystalline iron thin films: Major and minor loops, first order reversal curves, and Preisach modeling

    NASA Astrophysics Data System (ADS)

    Cao, Yue; Xu, Ke; Jiang, Weilin; Droubay, Timothy; Ramuhalli, Pradeep; Edwards, Danny; Johnson, Bradley R.; McCloy, John

    2015-12-01

    Hysteretic behavior was studied in a series of Fe thin films, grown by molecular beam epitaxy, having different grain sizes and grown on different substrates. Major and minor loops and first order reversal curves (FORCs) were collected to investigate magnetization mechanisms and domain behavior under different magnetic histories. The minor loop coefficient and major loop coercivity increase with decreasing grain size due to higher defect concentration resisting domain wall movement. First order reversal curves allowed estimation of the contribution of irreversible and reversible susceptibilities and switching field distribution. The differences in shape of the major loops and first order reversal curves are described using a classical Preisach model with distributions of hysterons of different switching fields, providing a powerful visualization tool to help understand the magnetization switching behavior of Fe films as manifested in various experimental magnetization measurements.

  20. Surface Modification of Polycrystalline Cu(In,Ga)Se2 Thin-Film Solar Cell Absorber Surfaces for PEEM Measurements

    SciTech Connect

    Wilks, R. G.; Contreras, M. A.; Lehmann, S.; Herrero-Albillos, J.; Bismaths, L. T.; Kronast, F.; Noufi, R.; Bar, M.

    2011-01-01

    We present a thorough examination of the {micro}m-scale topography of Cu(In, Ga)Se{sub 2} ('CIGSe') thin-film solar cell absorbers using different microscopy techniques. We specifically focus on the efficacy of preparing smooth sample surfaces - by etching in aqueous bromine solution - for a spatially resolved study of their chemical and electronic structures using photoelectron emission microscopy (PEEM). The etching procedure is shown to reduce the CIGSe surface roughness from ca. 40 to 25 nm after 40s etching, resulting in an increase in the quality of the obtained PEEM images. Furthermore we find that the average observed grain size at the etched surfaces appears larger than at the unetched surfaces. Using a liftoff procedure, it is additionally shown that the backside of the absorber is flat but finely patterned, likely due to being grown on the finely-structured Mo back contact.

  1. The effect of Ta doping in polycrystalline TiO{sub x} and the associated thin film transistor properties

    SciTech Connect

    Ok, Kyung-Chul Park, Yoseb Park, Jin-Seong E-mail: jsparklime@hanyang.ac.kr; Chung, Kwun-Bum E-mail: jsparklime@hanyang.ac.kr

    2013-11-18

    Tantalum (Ta) is suggested to act as an electron donor and crystal phase stabilizer in titanium oxide (TiO{sub x}). A transition occurs from an amorphous state to a crystalline phase at an annealing temperature above 300 °C in a vacuum ambient. As the annealing temperature increases from 300 °C to 450 °C, the mobility increases drastically from 0.07 cm{sup 2}/Vs to 0.61 cm{sup 2}/Vs. The remarkable enhancement of thin film transistor performance is suggested to be due to the splitting of Ti 3d band orbitals as well as the increase in Ta{sup 5+} ions that can act as electron donors.

  2. Symmetry dependent optoelectronic properties of grain boundaries in polycrystalline Cu(In,Ga)Se{sub 2} thin films

    SciTech Connect

    Müller, Mathias; Bertram, Frank; Christen, Jürgen; Abou-Ras, Daniel Rissom, Thorsten

    2014-01-14

    In a correlative study applying electron backscatter diffraction as well as spatially and spectrally resolved cathodoluminescence spectroscopy at low temperatures of about 5 K, the symmetry-dependent optoelectronic properties of grain boundaries in Cu(In,Ga)Se{sub 2} thin films have been investigated. We find that grain boundaries with lower symmetries tend to show a distinct spectral red shift of about 10 meV and a weak influence on the emission intensity. These behaviors are not detected at high-symmetry Σ3 grain boundaries, or at least in a strongly reduced way. The investigations in the present work help to clarify the ambivalent properties reported for grain boundaries in Cu(In,Ga)Se{sub 2}.

  3. Hysteresis in single and polycrystalline iron thin films: Major and minor loops, first order reversal curves, and Preisach modeling

    DOE PAGES

    Cao, Yue; Xu, Ke; Jiang, Weilin; ...

    2015-07-03

    Hysteretic behavior was studied in a series of Fe thin films, grown by molecular beam epitaxy, having different grain sizes and grown on different substrates. Major and minor loops and first order reversal curves (FORCs) were collected to investigate magnetization mechanisms and domain behavior under different magnetic histories. The minor loop coefficient and major loop coercivity increase with decreasing grain size due to higher defect concentration resisting domain wall movement. First order reversal curves allowed estimation of the contribution of irreversible and reversible susceptibilities and switching field distribution. The differences in shape of the major loops and first order reversalmore » curves are described using a classical Preisach model with distributions of hysterons of different switching fields, providing a powerful visualization tool to help understand the magnetization switching behavior of Fe films as manifested in various experimental magnetization measurements.« less

  4. Ion-assisted laser deposition of intermediate layers for YBa2Cu3O7-δ thin film growth on polycrystalline and amorphous substrates

    SciTech Connect

    Reade, Ronald P.

    1993-11-01

    The growth of YBa2Cu3O7-δ (YBCO) high-temperature superconductor thin films has largely been limited to deposition on single-crystal substrates to date. In order to expand the range of potential applications, growth on polycrystalline and amorphous substrates is desirable. In particular, the deposition of YBCO thin films with high critical current densities on polycrystalline metal alloys would allow the manufacture of superconducting tapes. However, it is shown that it is not possible to grow YBCO thin films directly on this type of substrate due to chemical and structural incompatibility. This work investigates the use of a yttria-stabilized zirconia (YSZ) intermediate layer to address this problem. An ion-assisted pulsed-laser deposition process is developed to provide control of orientation during the growth of the YSZ layers. The important properties of YBCO and YSZ are summarized and the status of research on thin film growth of these materials is reviewed. An overview of the pulsed-laser deposition (PLD) technique is presented. The use of ion-assisted deposition techniques to control thin film properties is discussed.

  5. Optoelectronic characterization of wide-bandgap (AgCu)(InGa)Se 2 thin-film polycrystalline solar cells including the role of the intrinsic zinc oxide layer

    NASA Astrophysics Data System (ADS)

    Obahiagbon, Uwadiae

    Experiments and simulations were conducted to vary the thickness and the sheet resistance of the high resistance (HR) ZnO layer in polycrystalline thin film (AgCu)(GaIn)Se2 (ACIGS) solar cells. The effect of varying these parameters on the electric field distribution, depletion width and hence capacitance were studied by SCAPS simulation. Devices were then fabricated and characterized by a number of optoelectronic techniques. Thin film CIGS has received a lot of attention, for its use as an absorber layer for thin film solar cells. However, the addition of Silver (Ag) to the CIGS alloy system increases the band gap as indicated from optical transmission measurements and thus higher open circuit voltage (Voc) could be obtained. Furthermore, addition of Ag lowers the melting temperature of the alloy and it is expected that this lowers the defect densities in the absorber and thus leads to higher performance. Transient photocapacitance analysis on ACIGS devices shows sharper band edge indicating lower disorder than CIGS. Presently there is a lack of fundamental knowledge relating film characteristics to device properties and performance. This is due to the fact that some features in the present solar cell structure have been optimized empirically. The goal of this research effort was to develop a fundamental and detailed understanding of the device operation as well as the loss mechanism(s) limiting these devices. Recombination mechanisms in finished ACIGS solar cell devices was studied using advanced admittance techniques (AS, DLCP, CV) to identify electronically active defect state(s) and to study their impact on electronic properties and device performance. Analysis of various optoelectronic measurements of ACIGS solar cells provided useful feedback regarding the impact on device performance of the HR ZnO layer. It was found that thickness between 10-100 nm had negligible impact on performance but reducing the thickness to 0 nm resulted in huge variability in all

  6. Measurement of Transient Tool Internal Temperature Fields by Novel Micro Thin Film Sensors Embedded in Polycrystalline Cubic Boron Nitride Cutting Inserts

    NASA Astrophysics Data System (ADS)

    Werschmoeller, Dirk

    Monitoring and control of thermomechanical phenomena in tooling are imperative for advancing fundamental understanding, enhancing reliability, and improving workpiece quality in material removal processes. Polycrystalline cubic boron nitride (PCBN) tools are being used heavily in numerous machining processes, e.g., machining of hardened low carbon steel and superalloys. These processes are very sensitive to variations in local cutting conditions at, or close to, the tool-workpiece interface, but lack a thorough understanding of fundamental transient thermo-mechanical phenomena present. As a result, abrupt catastrophic tool failures and degraded machined surfaces frequently occur. Existing sensors are not suitable for process control and monitoring, as they are either destructively embedded and/or do not possess the necessary spatial and temporal resolution to provide relevant data during machining. This research presents a novel approach for obtaining thermomechanical data from the close vicinity (i.e., 10s of micrometers) of the tool-workpiece interface. Arrays of micro thin film thermocouples with junction size 5 x 5 mum were fabricated by standard microfabrication methods and have been successfully embedded into PCBN using diffusion bonding. Electron microscopy and X-ray spectroscopy were employed to examine material interactions at the bonding interface and to determine optimal bonding parameters. Static and dynamic sensor performances have been characterized. The sensors exhibit excellent linearity up to 1300 °C, fast rise time of 150 ns, and possess good sensitivity. The inserts instrumented with embedded thin film C-type thermocouples were successfully applied to measure internal tool temperatures as close as 70 mum to the cutting edge while machining aluminum and hardened steel workpieces at industrially relevant cutting parameters. Acquired temperature data follow theoretical trends very well. Correlations between temperature and cutting parameters have

  7. Photoinduced current transient spectroscopy technique applied to the study of point defects in polycrystalline CdS thin films

    NASA Astrophysics Data System (ADS)

    El Akkad, Fikry; Ashour, Habib

    2009-05-01

    CdS thin films of variable thickness (between 160 and 1200 nm) were prepared using rf magnetron sputtering. X-ray diffraction measurements showed that the films have hexagonal structure and that the crystallites are preferentially oriented with the ⟨002⟩ axis perpendicular to the substrate surface. The results of electrical conductivity measurements as a function of film thickness and of temperature provide evidence that the conductivity is controlled by a thermally activated mobility in the presence of an intergrain barrier. The room temperature barrier height ϕ decreases with the increase in film thickness. Values of ϕ between 0 and 0.25 eV were determined. Photoinduced current transient spectroscopy performed on five samples having different thicknesses showed the presence of 11 traps with activation energies in the range 0.08-1.06 eV; deeper traps being observed on thinner films. By comparison with literature results, seven traps are attributed to native defects and foreign impurities (mainly Cu, Au, and Ag). Four other traps, not previously observed, are attributed to residual defects. The observation that deeper traps are detected in samples with larger barrier heights has been discussed and interpreted in terms of the energy band profile near the grain boundary.

  8. The structural, optical, and electrical properties of vacuum evaporated Cu-doped ZnTe polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Feng, L.; Mao, D.; Tang, J.; Collins, R. T.; Trefny, J. U.

    1996-09-01

    We have studied the structural, optical, and electrical properties of thermally evaporated, Cu-doped, ZnTe thin films as a function of Cu concentration and post-deposition annealing temperature. X-ray diffraction measurements showed that the ZnTe films evaporated on room temperature substrates were characterized by an average grain size of 300Å with a (111) preferred orientation. Optical absorption measurements yielded a bandgap of 2.21 eV for undoped ZnTe. A bandgap shrinkage was observed for the Cu-doped films. The dark resistivity of the as-deposited ZnTe decreased by more than three orders of magnitude as the Cu concentration was increased from 4 to 8 at.% and decreased to less than 1 ohm-cm after annealing at 260°C. For films doped with 6 7 at.% Cu, an increase of resistivity was also observed during annealing at 150 200°C. The activation energy of the dark conductivity was measured as a function of Cu concentration and annealing temperature. Hall measurements yielded hole mobility values in the range between 0.1 and 1 cm2/V·s for both as-deposited and annealed films. Solar cells with a CdS/CdTe/ZnTe/metal structure were fabricated using Cudoped ZnTe as a back contact layer on electrodeposited CdTe. Fill factors approaching 0.75 and energy conversion efficiencies as high as 12.1% were obtained.

  9. Structural, magnetic, and electrical studies on polycrystalline transition-metal-doped BiFeO(3) thin films.

    PubMed

    Kharel, P; Talebi, S; Ramachandran, B; Dixit, A; Naik, V M; Sahana, M B; Sudakar, C; Naik, R; Rao, M S R; Lawes, G

    2009-01-21

    We have synthesized a range of transition-metal-doped BiFeO(3) thin films on conducting silicon substrates using a spin-coating technique from metal-organic precursor solutions. Bismuth, iron and transition-metal-organic solutions were mixed in the appropriate ratios to produce 3% transition-metal-doped samples. X-ray diffraction studies show that the samples annealed in a nitrogen atmosphere crystallize in a rhombohedrally distorted BiFeO(3) structure with no evidence for any ferromagnetic secondary phase formation. We find evidence for the disappearance of the 404 cm(-1) Raman mode for certain dopants indicative of structural distortions. The saturation magnetization of these BiFeO(3) films has been found to increase on doping with transition metal ions, reaching a maximum value of 8.5 emu cm(-3) for the Cr-doped samples. However, leakage current measurements find that the resistivity of the films typically decreases with transition metal doping. We find no evidence for any systematic variation of the electric or magnetic properties of BiFeO(3) depending on the transition metal dopant, suggesting that these properties are determined mainly by extrinsic effects arising from defects or grain boundaries.

  10. Combinatorial investigation of the effects of sodium on Cu 2ZnSnSe4 polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Gibbs, Alex Hilton

    Cu2ZnSnSe4 (CZTSe) possess highly suitable optical and electronic properties for use as an absorber layer in thin film solar cells. CZTSe also has potential to achieve terawatt level solar energy production due to its inexpensive and abundant material constituents. Currently, fabricating CZTSe devices with the expected theoretical performance has not been achieved, making the growth and formation of CZTSe an interesting topic of research. In this work, a two-step vacuum fabrication process consisting of RF co-sputtering followed by reactive annealing was explored as a viable technique for synthesizing CZTSe thin films. Furthermore, the enhancement of the fabrication process by the incorporation of sodium during annealing was studied using a combinatorial approach. Film composition was analyzed using electron dispersive spectroscopy. Structure, phase morphology, and formation were determined using scanning electron microscopy, x-ray diffraction, atomic force microscopy and raman spectroscopy. Optical and electronic properties were characterized using UV-Vis and Voc were measurements under a one sun solar simulator. RF co-sputtering CuSe, ZnSe, and SnSe precursors produced films with good thickness uniformity, adhesion and stoichiometry control over 3 x 3 in 2 substrates. Composition measurements showed that the precursor films maintained stability during an annealing process of 580° C for 20 minutes producing near stoichiometric CZTSe. However, grain size was small with an average diameter of 350 nm. The CZTSe film produced by this process exhibited a suitable absorption coefficient of > 104 cm-1 and aband gap near 1.0 eV. The film also produced an XRD pattern consistent with tetragonal CZTSe with no secondary phase formation with the exception of approximately 12.5 nm of interfacial MoSe2 formation at the back contact. The combinatorial investigation of the influence of sodium on CZTSe growth and morphology was achieved using a custom built constant withdraw

  11. Polycrystalline semiconductor processing

    DOEpatents

    Glaeser, A.M.; Haggerty, J.S.; Danforth, S.C.

    1983-04-05

    A process is described for forming large-grain polycrystalline films from amorphous films for use as photovoltaic devices. The process operates on the amorphous film and uses the driving force inherent to the transition from the amorphous state to the crystalline state as the force which drives the grain growth process. The resultant polycrystalline film is characterized by a grain size that is greater than the thickness of the film. A thin amorphous film is deposited on a substrate. The formation of a plurality of crystalline embryos is induced in the amorphous film at predetermined spaced apart locations and nucleation is inhibited elsewhere in the film. The crystalline embryos are caused to grow in the amorphous film, without further nucleation occurring in the film, until the growth of the embryos is halted by impingement on adjacently growing embryos. The process is applicable to both batch and continuous processing techniques. In either type of process, the thin amorphous film is sequentially doped with p and n type dopants. Doping is effected either before or after the formation and growth of the crystalline embryos in the amorphous film, or during a continuously proceeding crystallization step. 10 figs.

  12. Polycrystalline semiconductor processing

    DOEpatents

    Glaeser, Andreas M.; Haggerty, John S.; Danforth, Stephen C.

    1983-01-01

    A process for forming large-grain polycrystalline films from amorphous films for use as photovoltaic devices. The process operates on the amorphous film and uses the driving force inherent to the transition from the amorphous state to the crystalline state as the force which drives the grain growth process. The resultant polycrystalline film is characterized by a grain size that is greater than the thickness of the film. A thin amorphous film is deposited on a substrate. The formation of a plurality of crystalline embryos is induced in the amorphous film at predetermined spaced apart locations and nucleation is inhibited elsewhere in the film. The crystalline embryos are caused to grow in the amorphous film, without further nucleation occurring in the film, until the growth of the embryos is halted by imgingement on adjacently growing embryos. The process is applicable to both batch and continuous processing techniques. In either type of process, the thin amorphous film is sequentially doped with p and n type dopants. Doping is effected either before or after the formation and growth of the crystalline embryos in the amorphous film, or during a continuously proceeding crystallization step.

  13. Self-consistent modelling of X-ray photoelectron spectra from air-exposed polycrystalline TiN thin films

    NASA Astrophysics Data System (ADS)

    Greczynski, G.; Hultman, L.

    2016-11-01

    We present first self-consistent modelling of x-ray photoelectron spectroscopy (XPS) Ti 2p, N 1s, O 1s, and C 1s core level spectra with a cross-peak quantitative agreement for a series of TiN thin films grown by dc magnetron sputtering and oxidized to different extent by varying the venting temperature Tv of the vacuum chamber before removing the deposited samples. So-obtained film series constitute a model case for XPS application studies, where certain degree of atmosphere exposure during sample transfer to the XPS instrument is unavoidable. The challenge is to extract information about surface chemistry without invoking destructive pre-cleaning with noble gas ions. All TiN surfaces are thus analyzed in the as-received state by XPS using monochromatic Al Kα radiation (hν = 1486.6 eV). Details of line shapes and relative peak areas obtained from deconvolution of the reference Ti 2p and N 1 s spectra representative of a native TiN surface serve as an input to model complex core level signals from air-exposed surfaces, where contributions from oxides and oxynitrides make the task very challenging considering the influence of the whole deposition process at hand. The essential part of the presented approach is that the deconvolution process is not only guided by the comparison to the reference binding energy values that often show large spread, but in order to increase reliability of the extracted chemical information the requirement for both qualitative and quantitative self-consistency between component peaks belonging to the same chemical species is imposed across all core-level spectra (including often neglected O 1s and C 1s signals). The relative ratios between contributions from different chemical species vary as a function of Tv presenting a self-consistency check for our model. We propose that the cross-peak self-consistency should be a prerequisite for reliable XPS peak modelling as it enhances credibility of obtained chemical information, while relying

  14. Chemical vapor deposition of thin-film polycrystalline Si for low-cost solar cells. Second quarterly technical progress report for period November 3, 1979 through February 1, 1980

    SciTech Connect

    Ruth, R.P.; Simpson, W.I.; Yang, J.J.J.; Moudy, L.A.; Johnson, R.E.

    1980-02-01

    A research program is in progress for the development of thin-film polycrystalline Si solar cells on low-cost substrate material. The results of the second quarter of work are described. The main emphasis has been on investigation of the transport properties of p-type polycrystalline Si films (formed by SiH/sub 4/ pyrolysis in H/sub 2/) as functions of grain size and acceptor doping concentration. The study has involved preparation of sets of polycrystalline films grown simultaneously on polycrystalline high-purity alumina substrates in a range of average grain sizes (approx. 1 ..mu..m to approx. 125 ..mu..m) and with a range of impurity doping concentrations from approx. 10/sup 15/ to >10/sup 20/ cm/sup -3/, primarily at approx. 985/sup 0/C. The doping concentrations are deduced from measurements of free carrier concentrations in simultaneously grown and identically doped single-crystal films on single-crystal alumina (i.e., sapphire) substrates. In addition to room-temperature measurements of resistivity and carrier concentration (and thus Hall mobility) made routinely on all of the films, selected sets of films have been characterized in detail by measurements as a function of sample temperature in the range 77 to 420/sup 0/K. The results to date confirm many of the features of the grain-boundary trapping model for conduction in polycrystalline Si, including the existence of a mobility minimum for an impurity doping concentration the magnitude of which varies with the average grain size in the film, the existence of barriers in the grain boundaries with heights that also are a function of doping concentration, and a strong dependence of free carrier concentration on the impurity doping concentration for values below that for which the mobility is a minimum. There are some pronounced differences in detail between the experimental results and the model, however, including that for the apparent area density of traps in the grain boundaries.

  15. Cobalt-free polycrystalline Ba0.95La0.05FeO3-δ thin films as cathodes for intermediate-temperature solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Chen, Dengjie; Chen, Chi; Dong, Feifei; Shao, Zongping; Ciucci, Francesco

    2014-03-01

    Ba0.95La0.05FeO3-δ (BLF) thin films as electrodes for intermediate-temperature solid oxide fuel cells are prepared on single-crystal yttria-stabilized zirconia (YSZ) substrates by pulsed laser deposition. The phase structure, surface morphology and roughness of the BLF thin films are characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. X-ray photoelectron spectroscopy is used to analyze the compositions of the deposited thin film and the chemical state of transition metal. The dense thin film exhibits a polycrystalline perovskite structure with a low surface roughness and a high oxygen vacancy concentration on the surface. Ag (paste or strip) and Au (strip) are applied on both surfaces of the symmetric cells as current collectors to evaluate electrochemical performance of the thin films. The electrode polarization resistances of the symmetric cells are found to be lower than those of most cobalt-free thin-film electrodes, e.g., 0.437 Ω cm2 at 700 °C and 0.21 atm. The oxygen reduction reaction mechanism of the BLF cathode in symmetric cells is studied by electrochemical impedance spectroscopy thanks to the equivalent fitting analysis. Both the oxygen surface exchange reaction and charge transfer are shown to determine the overall oxygen reduction reaction.

  16. Patterning polycrystalline thin films by defocused ion beam: The influence of initial morphology on the evolution of self-organized nanostructures

    SciTech Connect

    Toma, A.; Chiappe, D.; Boragno, C.; Buatier de Mongeot, F.; Batic, B. Setina; Godec, M.; Jenko, M.; Valbusa, U.

    2008-11-15

    We report on self-organized patterning of polycrystalline noble metal films, supported on dielectric substrates, by defocused Ar{sup +} ion beam irradiation. The initial surface morphology affects the formation of nanostructures, forcing the growth of ripples with a lateral periodicity imposed by the pristine polycrystalline grain distribution. At the early stages, the self-organization process is dominated by the shadowing of taller grains, while a crossover to the conventional erosive regime, observed for single crystals, sets in at longer sputtering times. The grain boundaries, although providing an additional bias for diffusion of mobile defects, do not affect the propagation of nanoscale ripples across individual grains.

  17. High Mobility Exceeding 80 cm2 V-1 s-1 in Polycrystalline Ta-Doped SnO2 Thin Films on Glass Using Anatase TiO2 Seed Layers

    NASA Astrophysics Data System (ADS)

    Nakao, Shoichiro; Yamada, Naoomi; Hitosugi, Taro; Hirose, Yasushi; Shimada, Toshihiro; Hasegawa, Tetsuya

    2010-03-01

    High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than two times increase in mobility, compared to films grown directly on the glass substrates. The highest mobility obtained was 83 cm2 V-1 s-1 with a resistivity of 2.8×10-4 Ω cm, whereas the film with the lowest resistivity of 1.8×10-4 Ω cm had a mobility of 60 cm2 V-1 s-1.

  18. Uniaxially oriented polycrystalline thin films and air-stable n-type transistors based on donor-acceptor semiconductor (diC8BTBT)(FnTCNQ) [n = 0, 2, 4

    NASA Astrophysics Data System (ADS)

    Shibata, Yosei; Tsutsumi, Jun'ya; Matsuoka, Satoshi; Matsubara, Koji; Yoshida, Yuji; Chikamatsu, Masayuki; Hasegawa, Tatsuo

    2015-04-01

    We report the fabrication of high quality thin films for semiconducting organic donor-acceptor charge-transfer (CT) compounds, (diC8BTBT)(FnTCNQ) (diC8BTBT = 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene and FnTCNQ [n = 0,2,4] = fluorinated derivatives of 7,7,8,8,-tetracyanoquinodimethane), which have a high degree of layered crystallinity. Single-phase and uniaxially oriented polycrystalline thin films of the compounds were obtained by co-evaporation of the component donor and acceptor molecules. Organic thin-film transistors (OTFTs) fabricated with the compound films exhibited n-type field-effect characteristics, showing a mobility of 6.9 × 10-2 cm2/V s, an on/off ratio of 106, a sub-threshold swing of 0.8 V/dec, and an excellent stability in air. We discuss the suitability of strong intermolecular donor-acceptor interaction and the narrow CT gap nature in compounds for stable n-type OTFT operation.

  19. Surface modification of grains with silver nano-clusters: a new route to great enhancement of photoluminescence in Eu³⁺-doped ferroelectric polycrystalline oxide thin films.

    PubMed

    Su, Li; Qin, Ni; Sa, Tongliang; Bao, Dinghua

    2013-12-02

    We report on a new route to greatly enhance the photoluminescence of Eu³⁺ doped ferroelectric polycrystalline oxide thin films: surface modification of grains with silver nanoclusters (NCs). The Ag doped Bi₃.₆Eu₀.₄Ti₃O₁₂ (BET) thin films were prepared by a chemical solution deposition method. According to the XRD, TEM and XPS analysis, partially oxidated Ag NCs have been formed on the surfaces of the BET grains. A greatly enhanced photoluminescence was obtained in a wide range of Ag doping level. Role of the Ag NCs in the photoluminescence enhancement was investigated by means of absorption, emission and excitation spectra, as well as decay lifetime measurement. The results indicate that the intra-4f transition of Eu³⁺ can be intensively activated by the coupling of the charge transfer band of BET with the ⁵D₀ state of Eu³⁺ ions, and the enhancement of Eu³⁺ ions emission in the present thin films was attributed to the surface modification of BET crystalline grains by Ag NCs. In addition, the influences of Ag NCs on the dielectric and ferroelectric properties of these materials were discussed as well.

  20. Polycrystalline BiFeO{sub 3} thin film synthesized via sol-gel assisted spin coating technique for photosensitive application

    SciTech Connect

    Bogle, K. A. Narwade, R. D.; Mahabole, M. P.; Khairnar, R. S.; Phatangare, A. B.; Dahiwale, S. S.

    2016-05-06

    We are reporting photosensitivity property of BiFeO{sub 3} thin film under optical illumination. The thin film used for photosensitivity work was fabricated via sol-gel assisted spin coating technique. I-V measurements on the Cu/BiFeO{sub 3}/Al structure under dark condition show a good rectifying property and show dramatic blue shit in threshold voltage under optical illumination. The microstructure, morphology and elemental analysis of the films were characterized by using XRD, UV-Vis, FTIR, SEM and EDS.

  1. High, magnetic-field-insensitive transport critical currents in unoriented polycrystalline thin films of Tl 2CaBa 2Cu 2O y

    NASA Astrophysics Data System (ADS)

    Kwak, J. F.; Venturini, E. L.; Baughman, R. J.; Morosin, B.; Ginley, D. S.

    1988-08-01

    We report critical current measurements for unoriented polycrystalline films of Tl 2CaBa 2Cu 2O y. At 77 K these films show critical current densities ranging from 10 000 to 110 000 A/cm 2, with a median value of 50 000 A/cm 2. Moreover, the best films' critical currents at 77 K drop less than 50% in an applied magnetic field of 1 T, and less than a factor of 20 at 6 T. At 4 K, critical current densities over 10 6A/cm 2 with less than 15% drop at 6 T have been obtained. The zero-field temperature dependence of the critical current from 4 to 95 K is well described as quadratic. High-field magnetization loops on the films at 76 K show a striking collapse in hysteresis below 0.6 T. Our results indicate that, although the grains in these films are Josephson-coupled, the strength of the coupling is greatly improved over other high- Tc granular systems.

  2. Raman scattering studies of polycrystalline 3C-SiC deposited on SiO 2 and AlN thin films

    NASA Astrophysics Data System (ADS)

    Jeong, Junho; Jang, Kiwan; Lee, Ho Sueb; Chung, Gwiy-Sang; Kim, Gwi-yeol

    2009-01-01

    This paper describes the Raman scattering characteristics of the Raman spectra of 0.4- and 2.0-μm-thick polycrystalline (poly) 3C-SiC on AlN /Si and SiO 2/Si by using atmosphere pressure chemical vapor deposition (APCVD) with hexamethyldisilane (HMDS) and carrier gases (Ar+H 2). In the Raman spectra for all growth temperatures, the D and G peaks of nanocrystalline graphite were measured. The C/Si rate of poly 3C-SiC deposited in (Ar+H 2) atmosphere was higher than that in H 2 gas, although HMDS C/Si rate is 3. The biaxial stresses of 2.0-μm-thick 3C-SiC on SiO 2 and AlN, which was deposited at the growth temperature of 1180 °C after annealing AlN at 800 and 1100 °C, were calculated as 428 and 896 MPa, respectively. Therefore, poly 3C-SiC should admix with nanocrystalline graphite due to the addition of Ar gas and poly 3C-SiC on SiO 2 should be better than on AlN for harsh environmental MEMS applications.

  3. The dependence of singlet exciton relaxation on excitation density and temperature in polycrystalline tetracene thin films: kinetic evidence for a dark intermediate state and implications for singlet fission.

    PubMed

    Burdett, Jonathan J; Gosztola, David; Bardeen, Christopher J

    2011-12-07

    The excited state dynamics of polycrystalline tetracene films are studied using femtosecond transient absorption in combination with picosecond fluorescence, continuing work reported in an earlier paper [J. J. Burdett, A. M. Muller, D. Gosztola, and C. J. Bardeen, J. Chem. Phys. 133, 144506 (2010)]. A study of the intensity dependence of the singlet state decay is conducted to understand the origins of the discrepancy between the broadband transient absorption and fluorescence experiments seen previously. High-sensitivity single channel transient absorption experiments allow us to compare the transient absorption dynamics to the fluorescence dynamics measured at identical laser fluences. At high excitation densities, an exciton-exciton annihilation rate constant of ~1 × 10(-8) cm(3) s(-1) leads to rapid singlet decays, but at excitation densities of 2 × 10(17) cm(-3) or less the kinetics of the transient absorption match those of the fluorescence. At these lower excitation densities, both measurements confirm that the initially excited singlet state relaxes with a decay time of 80 ± 3 ps, not 9.2 ps as claimed in the earlier paper. In order to investigate the origin of the singlet decay, the wavelength-resolved fluorescence dynamics were measured at 298 K, 77 K, and 4 K. A high-energy J-type emitting species undergo a rapid (~100 ps) decay at all temperatures, while at 77 K and 4 K additional species with H-type and J-type emission lineshapes have much longer lifetimes. A global analysis of the wavelength-dependent decays shows that the initial ~100 ps decay occurs to a dark state and not via energy transfer to lower energy bright states. Varying the excitation wavelength from 400 nm to 510 nm had no effect on the fast decay, suggesting that there is no energy threshold for the initial singlet relaxation. The presence of different emitting species at different temperatures means that earlier interpretations of the fluorescence behavior in terms of one singlet

  4. Polishing of polycrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Harker, Alan B.; Flintoff, John F.; DeNatale, Jeffrey F.

    1990-12-01

    Optically smooth surfaces can be produced on initially rough polycrystalline diamond film through the combined use of reactive ion etching and high temperature lapping on Fe metai Protective thin film barriers are first applied to the diamond surface to restrict the reactiv oxygen or hydrogen ion etching process to regions of greatest roughness. When the overaJ surface roughness has been reduced sufficiently by etching mechanical lapping of the surfac on an Fe plate at temperatures of 730C-900C in the presence of hydrogen can be used t produce surface roughnesses of less than 10 nm as measured by profilimetry. The tw techniques are complementary for flat surfaces while the reactive etching process alone can b used with shaped substrates to produce a surface finish suitable for LWIR optical applications. 1.

  5. Research on polycrystalline thin-film CuInGaSe{sub 2} solar cells. Annual subcontract report, 3 May 1991--21 May 1993

    SciTech Connect

    Chen, W.S.; Stewart, J.M.; Mickelsen, R.A.; Devaney, W.E.; Stanbery, B.J.

    1993-10-01

    This report describes work to fabricate high-efficiency CdZnS/CuInGaSe{sub 2}, thin-film solar cells and to develop improved transparent conductor window layers such as ZnO. The specific technical milestone for Phase I was to demonstrate an air mass (AM) 1.5 global 13% , 1-cm{sup 2} total-area CuInGaSe{sub 2} (CIGS) thin-film solar cell. For Phase II, the objective was to demonstrate an AM1.5 global 13.5%, 1-cm{sup 2} total-area efficiency. We focused our activities on three areas. First, we modified the CIGS deposition system to double its substrate capacity. Second, we developed new tooling to enable investigation of a modified aqueous CdZnS process in which the goal was to improve the yield of this critical step in the device fabrication process. Third, we upgraded the ZnO sputtering system to improve its reliability and reproducibility. A dual rotatable cathode metallic source was installed, and the sputtering parameters were further optimized to improve ZnO`s properties as a transparent conducting oxide (TCO). Combining the refined CdZnS process with CIGS from the newly fixtured deposition system enable us to fabricate and deliver a ZnO/Cd{sub 0.08}Zn{sub 0.20}S/CuIn{sub 0.74}Ga{sub 0.26}Se{sub 2} cell on alumina with I-V characteristics, as measured by NREL under standard test conditions, of 13.7% efficiency with V{proportional_to} = 0.5458 V, J{sub sc} = 35.48 mA/cm{sup 2}, FF = 0.688, and efficiency = 14.6%.

  6. Research on polycrystalline thin-film CuGaInSe{sub 2} solar cells. Annual subcontract report, 3 May 1991--2 May 1992

    SciTech Connect

    Stanbery, B.J.; Chen, W.S.; Devaney, W.E.; Stewart, J.W.

    1992-11-01

    This report describes research to fabricate high-efficiency CdZnS/CuInGaSe{sub 2} (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13% efficient, 1-cm{sup 2}-total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition: system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO//Cd{sub 0.82}Zn{sub 0.18}S/CuIn{sub 0.80}Ga{sub 0.20}Se{sub 2} cell that was verified at NREL under standard testing conditions at 13.1% efficiency with V{sub oc} = 0.581 V, J{sub sc} = 34.8 mA/cm{sup 2}, FF = 0.728, and a cell area of 0.979 cm{sup 2}.

  7. Recrystallization of polycrystalline silicon

    NASA Technical Reports Server (NTRS)

    Lall, C.; Kulkarni, S. B.; Graham, C. D., Jr.; Pope, D. P.

    1981-01-01

    Optical metallography is used to investigate the recrystallization properties of polycrystalline semiconductor-grade silicon. It is found that polycrystalline silicon recrystallizes at 1380 C in relatively short times, provided that the prior deformation is greater than 30%. For a prior deformation of about 40%, the recrystallization process is essentially complete in about 30 minutes. Silicon recrystallizes at a substantially slower rate than metals at equivalent homologous temperatures. The recrystallized grain size is insensitive to the amount of prestrain for strains in the range of 10-50%.

  8. Low-temperature (330 °C) crystallization and dopant activation of Ge thin films via AgSb-induced layer exchange: Operation of an n-channel polycrystalline Ge thin-film transistor

    NASA Astrophysics Data System (ADS)

    Suzuki, Tatsuya; Mutunga Joseph, Benedict; Fukai, Misato; Kamiko, Masao; Kyuno, Kentaro

    2017-09-01

    Ge thin films have been prepared by layer-exchange metal-induced crystallization using AgSb alloy as a catalyst. Not only the crystallization of Ge, but also the incorporation of Sb atoms into the crystalline Ge layer and their activation have been realized during the process at a temperature as low as 330 °C. Thin-film transistors have been fabricated using the Ge thin films as channel layers and the operation of an n-channel transistor with an on/off ratio of over 300 has been demonstrated.

  9. Research on polycrystalline thin-film submodules based on CuInSe{sub 2} materials. Final technical report, 14 December 1995--31 December 1996

    SciTech Connect

    Arya, R; Fogleboch, J; Kessler, J; Russell, L; Skibo, S; Wiedeman, S

    1997-04-01

    This report describes the progress made at Solarex for both device and module efficiencies from the inception of the CIS research program to the present. A rapid improvement in efficiency is apparent, culminating in the fabrication of a 15.5%-efficient device (total area) and a 13%-efficient submodule (aperture area). The device represents the highest efficiency device measured by NREL for any industrial source at that time. The module represented a new world record for any thin-film module at the time of its measurement. The factors leading to these results included improvements in absorber layer quality, transparent contacts, scribing and module formation processes. Other elements critical to the commercialization of CIS-based photovoltaics were also successfully attacked, including reduction of absorber deposition times into the range of 10 to 20 minutes and the successful scale-up of the absorber deposition process to greater than 500 cm{sup 2}. Other requisite processes saw continued development, such as a rapid, low-cost method for transparent window deposition. Subsequent to the demonstration of 13% module efficiency, scribing techniques were further improved that resulted in a reduction in shunt losses and higher module fill factor. This improvement, and the concomitant gain in fill factor, would yield efficiencies approaching 14% on modules having a short-circuit and open-circuit voltage comparable to the record module.

  10. Research on polycrystalline thin-film submodules based on CuInSe{sub 2} materials. Final subcontract report, 11 November 1990--30 June 1995

    SciTech Connect

    Arya, R; Fogleboch, J; Kessler, J; Russell, L; Skibo, S; Wiedeman, S

    1996-01-01

    This report describes work performed in development of CIS-based photovoltaic (PV) products. The activity began with developing manufacturable deposition methods for all required thin-film layers and developing and understanding processes using those methods. It included demonstrating the potential for high conversion efficiency and followed with developing viable methods for module segment formation and interconnection. These process steps were integrated to fabricate monolithic CIS-based submodules. An important result of this program is the basis of understanding established in developing this material for PV applications, which is necessary to address issues of manufacturability and cost-which were recognized early in the program as being determined by successful solutions to issues of yield, reproducibility, and control as much as by material and energy costs, conversion efficiency, and process speed. Solarex identified at least one absorber formation process that is very robust to shunt formation from pinholes or point defects, tolerant of variation in processing temperature and elemental composition, and is capable of producing high conversion efficiency. This program also allowed development and scale-up of processes for the deposition of all other substrate, heterojunction buffer, and window layers and associated scribing/module formation operations to 1000-CM{sup 2} size. At the completion of this program, Solarex has in place most of the necessary elements to begin the transition to pilot operation of CIS manufacturing activities.

  11. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual subcontract report, 20 March 1992--19 March 1993

    SciTech Connect

    Trefny, J.U.; Furtak, T.E.; Wada, N.; Williamson, D.L.; Kim, D.

    1993-08-01

    This report describes progress during the first year of a 3-year program at Colorado School of Mines, based upon earlier studies performed by Ametek Corporation, to develop specific layers of the Ametek n-i-p structure as well as additional studies of several transparent conducting oxides. Thin films of ZnO and ZnO:Al were deposited under various conditions. For the n-layer of the Ametek structure, a dip-coating method was developed for the deposition of CdS films. The authors also present data on the characterization of these films by X-ray diffraction, Raman spectroscopy, scanning tunneling microscopy, small-angle X-ray scattering, and other techniques. They made progress in the electrodeposition of the CdTe i-layer of the Ametek structure. They developed appropriate electrochemical baths and are beginning to understand the role of the many experimental parameters that must be controlled to obtain high-quality films of this material. They explored the possibility of using an electrochemical process for fabricating the ZnTe p-layer. Some preliminary success was achieved, and this step will be pursued in the next phase. Finally, they fabricated a number of ``dot`` solar cells with the structure glass/SnO{sub 2}/CdS/CdTe/Au. Several cells with efficiencies in the range of 5%-6% were obtained, and they are confident, given recent progress, that cells with efficiencies in excess of 10% will be achieved in the near future.

  12. Bioactivity of polycrystalline silicon layers.

    PubMed

    Pramatarova, Lilyana; Pecheva, Emilia; Montgomery, Paul; Dimova-Malinovska, Doriana; Petrov, Todor; Toth, Attila L; Dimitrova, Magdalena

    2008-02-01

    After oxygen, silicon is the second most abundant element in the environment and is present as an impurity in most materials. The widespread occurrence of siliceous biominerals as structural elements in lower plants and animals suggests that Si plays a role in the production and maintenance of connective tissue in higher organisms. It has been shown that the presence of Si is necessary in bones, cartilage and in the formation of connective tissue, as well as in some important metabolic processes. In this work, polycrystalline silicon layers are tested in terms of bioactivity, i.e., their ability to induce hydroxyapatite formation from simulated body fluid. Hydroxyapatite is a biologically compatible material with chemical similarity to the inorganic part of bones and teeth. Polycrystalline silicon layers are obtained by aluminum induced crystallization of Al and amorphous Si thin films deposited sequentially on glass substrates by radio-frequency magnetron sputtering and subsequently annealed in different atmospheres. The hydroxyapatite formation is induced by applying a method of laser-liquid-solid interaction. The method consists of irradiating the samples with laser light while immersed in a solution that is supersaturated with respect to Ca and P. As a result, heterogeneous porous sponge-like carbonate-containing hydroxyapatite is grown on the polysilicon surfaces. Crystals that are spherical in shape, containing Ca, P and O, Na, Cl, Mg, Al, Si and S, as well as well-faceted NaCl crystals are embedded in the hydroxyapatite layer. Enhancement of the hydroxyapatite growth and increased crystallinity is observed due to the applied laser-liquid-solid interaction.

  13. Thin-film polycrystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Funghnan, B. W.; Blanc, J.; Phillips, W.; Redfield, D.

    1980-08-01

    Thirty-four new solar cells were fabricated on Wacker Sislo substrates and the AM-1 parameters were measured. A detailed comparison was made between the measurement of minority carrier diffusion length by the OE method and the penetrating light laser scan grain boundary photoresponse linewidth method. The laser scan method has more experimental uncertainty and agrees within 10 to 50% with the QE method. It allows determination of L over a large area. Atomic hydrogen passivation studies continued on Wacker material by three techniques. A method of determining surface recombination velocity, s, from laser scan data was developed. No change in s in completed solar cells after H-plasma treatment was observed within experimental error. H-passivation of bare silicon cars as measured by the new laser scan photoconductivity technique showed very large effects.

  14. Gelcasting Polycrystalline Alumina

    SciTech Connect

    Janney, M.A.; Zuk, K.J.; Wei, G.C.

    2000-01-01

    OSRAM SYLVANIA INC. is a major U.S. manufacturer of high-intensity lighting. Among its products is the Lumalux TM line of high-pressure sodium vapor arc lamps, which are used for industrial, highway, and street lighting. The key to the performance of these lamps is the polycrystalline alumina (PCA) tube that is used to contain the plasma that is formed in the electric arc. That plasma consists of ionized sodium, mercury, and xenon vapors. The key attributes of the PCA tubes are their transparency ({approximately}97% total transmittance in the visible), their refractoriness (inner wall temperature can reach l2OOC), and their chemical resistance (sodium and mercury vapor are extremely corrosive). The current efficiency of the lamps is very high, up to 100 initial lumens per watt. (Compare incandescent lamps 10-20 lumens per watt, fluorescent lamps 25-90 lumens per watt.)

  15. Selective and low temperature synthesis of polycrystalline diamond

    NASA Technical Reports Server (NTRS)

    Ramesham, R.; Roppel, T.; Ellis, C.; Baugh, W.; Jaworske, D. A.

    1991-01-01

    Polycrystalline diamond thin films have been deposited on single-crystal silicon substrates at low temperatures (not above 600 C) using a mixture of hydrogen and methane gases by high-pressure microwave plasma-assisted chemical vapor deposition. Low-temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

  16. Selective and low temperature synthesis of polycrystalline diamond

    NASA Technical Reports Server (NTRS)

    Ramesham, R.; Roppel, T.; Ellis, C.; Baugh, W.; Jaworske, D. A.

    1991-01-01

    Polycrystalline diamond thin films have been deposited on single-crystal silicon substrates at low temperatures (not above 600 C) using a mixture of hydrogen and methane gases by high-pressure microwave plasma-assisted chemical vapor deposition. Low-temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

  17. Charge carrier dynamics and recombination in graded band gap CuIn1-xGaxSe2 polycrystalline thin-film photovoltaic solar cell absorbers

    SciTech Connect

    Kuciauskas, Darius; Li, Jian V.; Contreras, Miguel A.; Pankow, Joel; Dippo, Patricia; Young, Matthew; Mansfield, Lorelle M.; Noufi, Rommel; Levi, Dean

    2013-01-01

    We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn1-xGaxSe2 (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75–230 cm2 V-1s-1. Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5×1015–1017cm-3. Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells.

  18. Gelcasting polycrystalline alumina

    SciTech Connect

    Janney, M.A.

    1997-04-01

    This work is being done as part of a CRADA with Osram-Sylvania, Inc. (OSI) OSI is a major U.S. manufacturer of high-intensity lighting. Among its products is the Lumalux{reg_sign} line of high-pressure sodium vapor arc lamps, which are used for industrial, highway, and street lighting. The key to the performance of these lamps is the polycrystalline alumina (PCA) tube that is used to contain the plasma that is formed in the electric arc. That plasma consists of ionized sodium, mercury, and xenon vapors. The key attributes of the PCA tubes are their transparency (95% total transmittance in the visible region), their refractoriness (inner wall temperature can reach 1400{degrees}C), and their chemical resistance (sodium and mercury vapor are extremely corrosive). The current efficiency of the lamps is very high, on the order of several hundred lumens / watt. (Compare - incandescent lamps -13 lumens/watt fluorescent lamps -30 lumens/watt.) Osram-Sylvania would like to explore using gelcasting to form PCA tubes for Lumalux{reg_sign} lamps, and eventually for metal halide lamps (known as quartz-halogen lamps). Osram-Sylvania, Inc. currently manufactures PCA tubes by isostatic pressing. This process works well for the shapes that they presently use. However, there are several types of tubes that are either difficult or impossible to make by isostatic pressing. It is the desire to make these new shapes and sizes of tubes that has prompted Osram-Sylvania`s interest in gelcasting. The purpose of the CRADA is to determine the feasibility of making PCA items having sufficient optical quality that they are useful in lighting applications using gelcasting.

  19. Physics of grain boundaries in polycrystalline photovoltaic semiconductors

    SciTech Connect

    Yan, Yanfa Yin, Wan-Jian; Wu, Yelong; Shi, Tingting; Paudel, Naba R.; Li, Chen; Poplawsky, Jonathan; Wang, Zhiwei; Moseley, John; Guthrey, Harvey; Moutinho, Helio; Al-Jassim, Mowafak M.; Pennycook, Stephen J.

    2015-03-21

    Thin-film solar cells based on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) and CdTe photovoltaic semiconductors have reached remarkable laboratory efficiencies. It is surprising that these thin-film polycrystalline solar cells can reach such high efficiencies despite containing a high density of grain boundaries (GBs), which would seem likely to be nonradiative recombination centers for photo-generated carriers. In this paper, we review our atomistic theoretical understanding of the physics of grain boundaries in CIGS and CdTe absorbers. We show that intrinsic GBs with dislocation cores exhibit deep gap states in both CIGS and CdTe. However, in each solar cell device, the GBs can be chemically modified to improve their photovoltaic properties. In CIGS cells, GBs are found to be Cu-rich and contain O impurities. Density-functional theory calculations reveal that such chemical changes within GBs can remove most of the unwanted gap states. In CdTe cells, GBs are found to contain a high concentration of Cl atoms. Cl atoms donate electrons, creating n-type GBs between p-type CdTe grains, forming local p-n-p junctions along GBs. This leads to enhanced current collections. Therefore, chemical modification of GBs allows for high efficiency polycrystalline CIGS and CdTe thin-film solar cells.

  20. Physics of grain boundaries in polycrystalline photovoltaic semiconductors

    NASA Astrophysics Data System (ADS)

    Yan, Yanfa; Yin, Wan-Jian; Wu, Yelong; Shi, Tingting; Paudel, Naba R.; Li, Chen; Poplawsky, Jonathan; Wang, Zhiwei; Moseley, John; Guthrey, Harvey; Moutinho, Helio; Pennycook, Stephen J.; Al-Jassim, Mowafak M.

    2015-03-01

    Thin-film solar cells based on polycrystalline Cu(In,Ga)Se2 (CIGS) and CdTe photovoltaic semiconductors have reached remarkable laboratory efficiencies. It is surprising that these thin-film polycrystalline solar cells can reach such high efficiencies despite containing a high density of grain boundaries (GBs), which would seem likely to be nonradiative recombination centers for photo-generated carriers. In this paper, we review our atomistic theoretical understanding of the physics of grain boundaries in CIGS and CdTe absorbers. We show that intrinsic GBs with dislocation cores exhibit deep gap states in both CIGS and CdTe. However, in each solar cell device, the GBs can be chemically modified to improve their photovoltaic properties. In CIGS cells, GBs are found to be Cu-rich and contain O impurities. Density-functional theory calculations reveal that such chemical changes within GBs can remove most of the unwanted gap states. In CdTe cells, GBs are found to contain a high concentration of Cl atoms. Cl atoms donate electrons, creating n-type GBs between p-type CdTe grains, forming local p-n-p junctions along GBs. This leads to enhanced current collections. Therefore, chemical modification of GBs allows for high efficiency polycrystalline CIGS and CdTe thin-film solar cells.

  1. Crystal structure analysis in solution-processed uniaxially oriented polycrystalline thin film of non-peripheral octahexyl phthalocyanine by grazing incidence wide-angle x-ray scattering techniques

    NASA Astrophysics Data System (ADS)

    Ohmori, Masashi; Uno, Takashi; Nakatani, Mitsuhiro; Nakano, Chika; Fujii, Akihiko; Ozaki, Masanori

    2016-10-01

    Uniaxially oriented thin films of metal-free non-peripherally octahexyl-substituted phthalocyanine (C6PcH2), which exhibits high carrier mobility, have been fabricated by the bar-coating technique, which is a simple solution process. The molecular orientation and molecular steps in the thin film were observed by the polarized spectroscopy and the atomic force microscopy, respectively. The three-dimensional molecular packing structure in the thin film was investigated by the grazing incidence wide-angle X-ray scattering technique with an in-plane sample rotation. The crystal orientation was clarified, and the three-dimensional molecular packing structure of the thin film was found to match the single crystal structure. Moreover, the X-ray diffraction patterns of the oriented thin films were simulated by using the lattice parameters of C6PcH2 single crystal to reproduce the observed X-ray diffraction patterns.

  2. Anomalous photoelectric effect of a polycrystalline topological insulator film.

    PubMed

    Zhang, Hongbin; Yao, Jiandong; Shao, Jianmei; Li, Hai; Li, Shuwei; Bao, Dinghua; Wang, Chengxin; Yang, Guowei

    2014-07-29

    A topological insulator represents a new state of quantum matter that possesses an insulating bulk band gap as well as a spin-momentum-locked Dirac cone on the surface that is protected by time-reversal symmetry. Photon-dressed surface states and light-induced surface photocurrents have been observed in topological insulators. Here, we report experimental observations of an anomalous photoelectric effect in thin films of Bi2Te3, a polycrystalline topological insulator. Under illumination with non-polarised light, transport measurements reveal that the resistance of the topological surface states suddenly increases when the polycrystalline film is illuminated. The resistance variation is positively dependent on the light intensity but has no relation to the applied electric field; this finding can be attributed to the gap opening of the surface Dirac cone. This observation of an anomalous photoelectric effect in polycrystalline topological insulators offers exciting opportunities for the creation of photodetectors with an unusually broad spectral range. Moreover, polycrystalline topological insulator films provide an attractive material platform for exploring the nature and practical application of topological insulators.

  3. Anomalous Photoelectric Effect of a Polycrystalline Topological Insulator Film

    PubMed Central

    Zhang, Hongbin; Yao, Jiandong; Shao, Jianmei; Li, Hai; Li, Shuwei; Bao, Dinghua; Wang, Chengxin; Yang, Guowei

    2014-01-01

    A topological insulator represents a new state of quantum matter that possesses an insulating bulk band gap as well as a spin-momentum-locked Dirac cone on the surface that is protected by time-reversal symmetry. Photon-dressed surface states and light-induced surface photocurrents have been observed in topological insulators. Here, we report experimental observations of an anomalous photoelectric effect in thin films of Bi2Te3, a polycrystalline topological insulator. Under illumination with non-polarised light, transport measurements reveal that the resistance of the topological surface states suddenly increases when the polycrystalline film is illuminated. The resistance variation is positively dependent on the light intensity but has no relation to the applied electric field; this finding can be attributed to the gap opening of the surface Dirac cone. This observation of an anomalous photoelectric effect in polycrystalline topological insulators offers exciting opportunities for the creation of photodetectors with an unusually broad spectral range. Moreover, polycrystalline topological insulator films provide an attractive material platform for exploring the nature and practical application of topological insulators. PMID:25069391

  4. Hopping conduction in polycrystalline semiconductors

    NASA Astrophysics Data System (ADS)

    Sharma, R. P.; Shukla, A. K.; Kapoor, A. K.; Srivastava, R.; Mathur, P. C.

    1985-03-01

    Measurements of dc conductivity (sigma) on polycrystalline semiconductors, viz., InSb, Si, and CdTe, have been reported in the temperature range 77-300 K. The conduction mechanism near liquid-nitrogen temperature has been identified as the hopping of charge carriers from the charged trap centers to empty traps near the Fermi level.

  5. Role of polycrystallinity in CdTe and CuInSe[sub 2] photovoltaic cells

    SciTech Connect

    Sites, J.R. )

    1992-11-01

    The limiting role of polycrystallinity in thin-film solar calls has been reduced somewhat during the past year, and efficiencies of both CdTe and CuInSe[sub 2] cells are approaching 15%. Quantitative separation of loss mechanisms shows that individual losses, with the exception of forward recombination current, can be made comparable to their single crystal counterparts. One general manifestation of the extraneous trapping states in that the voltage of all polycrystalline thin-film cells drifts upward by 10--50 mV following the onset of illumination.

  6. Surface properties of atomically flat poly-crystalline SrTiO3

    PubMed Central

    Woo, Sungmin; Jeong, Hoidong; Lee, Sang A.; Seo, Hosung; Lacotte, Morgane; David, Adrian; Kim, Hyun You; Prellier, Wilfrid; Kim, Yunseok; Choi, Woo Seok

    2015-01-01

    Comparison between single- and the poly-crystalline structures provides essential information on the role of long-range translational symmetry and grain boundaries. In particular, by comparing single- and poly-crystalline transition metal oxides (TMOs), one can study intriguing physical phenomena such as electronic and ionic conduction at the grain boundaries, phonon propagation, and various domain properties. In order to make an accurate comparison, however, both single- and poly-crystalline samples should have the same quality, e.g., stoichiometry, crystallinity, thickness, etc. Here, by studying the surface properties of atomically flat poly-crystalline SrTiO3 (STO), we propose an approach to simultaneously fabricate both single- and poly-crystalline epitaxial TMO thin films on STO substrates. In order to grow TMOs epitaxially with atomic precision, an atomically flat, single-terminated surface of the substrate is a prerequisite. We first examined (100), (110), and (111) oriented single-crystalline STO surfaces, which required different annealing conditions to achieve atomically flat surfaces, depending on the surface energy. A poly-crystalline STO surface was then prepared at the optimum condition for which all the domains with different crystallographic orientations could be successfully flattened. Based on our atomically flat poly-crystalline STO substrates, we envision expansion of the studies regarding the TMO domains and grain boundaries. PMID:25744275

  7. A comparative study of the microstructural and magnetic properties of <1 1 0> textured thin polycrystalline Fe100-xGax (10 ≤ x ≤ 35) films

    NASA Astrophysics Data System (ADS)

    Javed, A.; Morley, N. A.; Szumiata, T.; Gibbs, M. R. J.

    2011-05-01

    In this work, we present a detailed analysis of the microstructure and magnetic properties of 50 ± 2 nm thick polycrystalline Fe 100- xGa x (10 ≤ x ≤ 35) films. Two sets of Fe 100- xGa x films were fabricated on Si 1 0 0 substrates with and without a forming field Hf present. Microstructural properties were studied using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and conversion electron Mössbauer spectroscopy (CEMS). Magnetic properties were studied using the magneto optical Kerr effect (MOKE) magnetometer. For all films, the 1 1 0 texture normal to the film plane was observed from XRD. No peaks corresponding to the ordered D0 3 or L1 2 phases were observed from XRD. Using CEMS, the disordered A2 phase was confirmed in all films. It was found that the magnetostriction in Set-1 (forming field Hf = 0) films was ˜40-50% higher compared to the Set-2 ( Hf ≠ 0) films over the whole Ga composition range studied. Both film sets have a strong dependence of saturation field H s on Ga composition. Set-1 films were magnetically isotropic but a weak uniaxial anisotropy was observed in Set-2 films. The saturation field H s in Set-2 films was significantly lower compared to the Set-1 films. It was concluded that the H f reduced H s but also reduced effective saturation magnetostriction constant λeff in the films.

  8. Orientation-distribution mapping of polycrystalline materials by Raman microspectroscopy

    PubMed Central

    Schmid, T.; Schäfer, N.; Levcenko, S.; Rissom, T.; Abou-Ras, D.

    2015-01-01

    Raman microspectroscopy provides the means to obtain local orientations on polycrystalline materials at the submicrometer level. The present work demonstrates how orientation-distribution maps composed of Raman intensity distributions can be acquired on large areas of several hundreds of square micrometers. A polycrystalline CuInSe2 thin film was used as a model system. The orientation distributions are evidenced by corresponding measurements using electron backscatter diffraction (EBSD) on the same identical specimen positions. The quantitative, local orientation information obtained by means of EBSD was used to calculate the theoretical Raman intensities for specific grain orientations, which agree well with the experimental values. The presented approach establishes new horizons for Raman microspectroscopy as a tool for quantitative, microstructural analysis at submicrometer resolution. PMID:26673970

  9. Electronic transport in polycrystalline graphene.

    PubMed

    Yazyev, Oleg V; Louie, Steven G

    2010-10-01

    Most materials in available macroscopic quantities are polycrystalline. Graphene, a recently discovered two-dimensional form of carbon with strong potential for replacing silicon in future electronics, is no exception. There is growing evidence of the polycrystalline nature of graphene samples obtained using various techniques. Grain boundaries, intrinsic topological defects of polycrystalline materials, are expected to markedly alter the electronic transport in graphene. Here, we develop a theory of charge carrier transmission through grain boundaries composed of a periodic array of dislocations in graphene based on the momentum conservation principle. Depending on the grain-boundary structure we find two distinct transport behaviours--either high transparency, or perfect reflection of charge carriers over remarkably large energy ranges. First-principles quantum transport calculations are used to verify and further investigate this striking behaviour. Our study sheds light on the transport properties of large-area graphene samples. Furthermore, purposeful engineering of periodic grain boundaries with tunable transport gaps would allow for controlling charge currents without the need to introduce bulk bandgaps in otherwise semimetallic graphene. The proposed approach can be regarded as a means towards building practical graphene electronics.

  10. Transparent polycrystalline cubic silicon nitride

    NASA Astrophysics Data System (ADS)

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-03-01

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions.

  11. Transparent polycrystalline cubic silicon nitride.

    PubMed

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-03-17

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions.

  12. Transparent polycrystalline cubic silicon nitride

    PubMed Central

    Nishiyama, Norimasa; Ishikawa, Ryo; Ohfuji, Hiroaki; Marquardt, Hauke; Kurnosov, Alexander; Taniguchi, Takashi; Kim, Byung-Nam; Yoshida, Hidehiro; Masuno, Atsunobu; Bednarcik, Jozef; Kulik, Eleonora; Ikuhara, Yuichi; Wakai, Fumihiro; Irifune, Tetsuo

    2017-01-01

    Glasses and single crystals have traditionally been used as optical windows. Recently, there has been a high demand for harder and tougher optical windows that are able to endure severe conditions. Transparent polycrystalline ceramics can fulfill this demand because of their superior mechanical properties. It is known that polycrystalline ceramics with a spinel structure in compositions of MgAl2O4 and aluminum oxynitride (γ-AlON) show high optical transparency. Here we report the synthesis of the hardest transparent spinel ceramic, i.e. polycrystalline cubic silicon nitride (c-Si3N4). This material shows an intrinsic optical transparency over a wide range of wavelengths below its band-gap energy (258 nm) and is categorized as one of the third hardest materials next to diamond and cubic boron nitride (cBN). Since the high temperature metastability of c-Si3N4 in air is superior to those of diamond and cBN, the transparent c-Si3N4 ceramic can potentially be used as a window under extremely severe conditions. PMID:28303948

  13. Measuring long-range carrier diffusion across multiple grains in polycrystalline semiconductors by photoluminescence imaging

    PubMed Central

    Alberi, K.; Fluegel, B.; Moutinho, H.; Dhere, R. G.; Li, J. V.; Mascarenhas, A.

    2013-01-01

    Thin-film polycrystalline semiconductors are currently at the forefront of inexpensive large-area solar cell and integrated circuit technologies because of their reduced processing and substrate selection constraints. Understanding the extent to which structural and electronic defects influence carrier transport in these materials is critical to controlling the optoelectronic properties, yet many measurement techniques are only capable of indirectly probing their effects. Here we apply a novel photoluminescence imaging technique to directly observe the low temperature diffusion of photocarriers through and across defect states in polycrystalline CdTe thin films. Our measurements show that an inhomogeneous distribution of localized defect states mediates long-range hole transport across multiple grain boundaries to locations exceeding 10 μm from the point of photogeneration. These results provide new insight into the key role deep trap states have in low temperature carrier transport in polycrystalline CdTe by revealing their propensity to act as networks for hopping conduction. PMID:24158163

  14. Measuring long-range carrier diffusion across multiple grains in polycrystalline semiconductors by photoluminescence imaging.

    PubMed

    Alberi, K; Fluegel, B; Moutinho, H; Dhere, R G; Li, J V; Mascarenhas, A

    2013-01-01

    Thin-film polycrystalline semiconductors are currently at the forefront of inexpensive large-area solar cell and integrated circuit technologies because of their reduced processing and substrate selection constraints. Understanding the extent to which structural and electronic defects influence carrier transport in these materials is critical to controlling the optoelectronic properties, yet many measurement techniques are only capable of indirectly probing their effects. Here we apply a novel photoluminescence imaging technique to directly observe the low temperature diffusion of photocarriers through and across defect states in polycrystalline CdTe thin films. Our measurements show that an inhomogeneous distribution of localized defect states mediates long-range hole transport across multiple grain boundaries to locations exceeding 10 μm from the point of photogeneration. These results provide new insight into the key role deep trap states have in low temperature carrier transport in polycrystalline CdTe by revealing their propensity to act as networks for hopping conduction.

  15. Measuring long-range carrier diffusion across multiple grains in polycrystalline semiconductors by photoluminescence imaging

    NASA Astrophysics Data System (ADS)

    Alberi, K.; Fluegel, B.; Moutinho, H.; Dhere, R. G.; Li, J. V.; Mascarenhas, A.

    2013-10-01

    Thin-film polycrystalline semiconductors are currently at the forefront of inexpensive large-area solar cell and integrated circuit technologies because of their reduced processing and substrate selection constraints. Understanding the extent to which structural and electronic defects influence carrier transport in these materials is critical to controlling the optoelectronic properties, yet many measurement techniques are only capable of indirectly probing their effects. Here we apply a novel photoluminescence imaging technique to directly observe the low temperature diffusion of photocarriers through and across defect states in polycrystalline CdTe thin films. Our measurements show that an inhomogeneous distribution of localized defect states mediates long-range hole transport across multiple grain boundaries to locations exceeding 10 μm from the point of photogeneration. These results provide new insight into the key role deep trap states have in low temperature carrier transport in polycrystalline CdTe by revealing their propensity to act as networks for hopping conduction.

  16. Process Research On Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wohlgemuth, J. H.

    1982-01-01

    Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.

  17. Selective CO2 reduction on a polycrystalline Ag electrode enhanced by anodization treatment.

    PubMed

    Zhou, Li Qin; Ling, Chen; Jones, Michael; Jia, Hongfei

    2015-12-28

    Electrochemical reduction of CO2 to CO on polycrystalline silver (Ag) was greatly improved by a simple anodization treatment. A CO faradaic efficiency of 92.8% was achieved at an overpotential of 0.50 V in an aqueous electrolyte. This study suggests that the enhanced performance is due to a preferred (220) orientation and a thin silver oxide layer formed by anodization.

  18. Allylamine-mediated DNA attachment to polycrystalline diamond surface

    NASA Astrophysics Data System (ADS)

    Zhuang, H.; Srikanth, Vadali. V. S. S.; Jiang, X.; Luo, J.; Ihmels, H.; Aronov, I.; Wenclawiak, B. W.; Adlung, M.; Wickleder, C.

    2009-10-01

    Allylamine, an unsaturated short carbon chain amine was used to mediate ss-DNA attachment to an H-terminated polycrystalline diamond thin film surface for biosensoric applications. At first, allylamine was photochemically tethered onto the diamond film surface; ss-DNA was then attached via the allylamine linkage. The DNA molecules are then hybridized with the complementary DNA molecules containing fluorescence labels followed by denaturing. Time-of-fight secondary ion mass spectrometry and fluorescence spectroscopy are used to confirm the allylamine bonding and the covalent DNA bonding to the diamond film surface, respectively.

  19. Low temperature production of large-grain polycrystalline semiconductors

    DOEpatents

    Naseem, Hameed A.; Albarghouti, Marwan

    2007-04-10

    An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

  20. Thin-Film Photovoltaics: Status and Applications to Space Power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

  1. Applications of thin-film photovoltaics for space

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The authors discuss the potential applications of thin-film polycrystalline and amorphous cells for space. There have been great advances in thin-film solar cells for terrestrial applications. Transfer of this technology to space applications could result in ultra low-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper indium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon arrays. The possibility of using thin-film multi-bandgap cascade solar cells is discussed.

  2. Applications of thin-film photovoltaics for space

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The authors discuss the potential applications of thin-film polycrystalline and amorphous cells for space. There have been great advances in thin-film solar cells for terrestrial applications. Transfer of this technology to space applications could result in ultra low-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper indium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon arrays. The possibility of using thin-film multi-bandgap cascade solar cells is discussed.

  3. Thin-Film Photovoltaics: Status and Applications to Space Power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

  4. Polycrystalline silicon availability for photovoltaic and semiconductor industries

    NASA Technical Reports Server (NTRS)

    Ferber, R. R.; Costogue, E. N.; Pellin, R.

    1982-01-01

    Markets, applications, and production techniques for Siemens process-produced polycrystalline silicon are surveyed. It is noted that as of 1982 a total of six Si materials suppliers were servicing a worldwide total of over 1000 manufacturers of Si-based devices. Besides solar cells, the Si wafers are employed for thyristors, rectifiers, bipolar power transistors, and discrete components for control systems. An estimated 3890 metric tons of semiconductor-grade polycrystalline Si will be used in 1982, and 6200 metric tons by 1985. Although the amount is expected to nearly triple between 1982-89, research is being carried out on the formation of thin films and ribbons for solar cells, thereby eliminating the waste produced in slicing Czolchralski-grown crystals. The free-world Si production in 1982 is estimated to be 3050 metric tons. Various new technologies for the formation of polycrystalline Si at lower costs and with less waste are considered. New entries into the industrial Si formation field are projected to produce a 2000 metric ton excess by 1988.

  5. Influence of Grain Structure and Doping on the Deformation and Fracture of Polycrystalline Silicon for MEMS/NEMS

    DTIC Science & Technology

    2012-08-01

    Champaign Influence of Grain Structure and Doping on the Deformation and Fracture of Polycrystalline Silicon for MEMS /NEMS AFOSR Grant # FA9550-09-1...thin films for MEMS and mechanical properties under open and short circuit conditions: They were the first data of their kind and have drawn interest by industry too. ...Structure and Doping on the Deformation and Fracture of Polycrystalline Silicon for MEMS /NEMS 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM

  6. Casting larger polycrystalline silicon ingots

    SciTech Connect

    Wohlgemuth, J.; Tomlinson, T.; Cliber, J.; Shea, S.; Narayanan, M.

    1995-08-01

    Solarex has developed and patented a directional solidification casting process specifically designed for photovoltaics. In this process, silicon feedstock is melted in a ceramic crucible and solidified into a large grained semicrystalline silicon ingot. In-house manufacture of low cost, high purity ceramics is a key to the low cost fabrication of Solarex polycrystalline wafers. The casting process is performed in Solarex designed casting stations. The casting operation is computer controlled. There are no moving parts (except for the loading and unloading) so the growth process proceeds with virtually no operator intervention Today Solarex casting stations are used to produce ingots from which 4 bricks, each 11.4 cm by 11.4 cm in cross section, are cut. The stations themselves are physically capable of holding larger ingots, that would yield either: 4 bricks, 15 cm by 15 an; or 9 bricks, 11.4 cm by 11.4 an in cross-section. One of the tasks in the Solarex Cast Polycrystalline Silicon PVMaT Program is to design and modify one of the castings stations to cast these larger ingots. If successful, this effort will increase the production capacity of Solarex`s casting stations by 73% and reduce the labor content for casting by an equivalent percentage.

  7. Fracture behaviour of polycrystalline tungsten

    NASA Astrophysics Data System (ADS)

    Gaganidze, Ermile; Rupp, Daniel; Aktaa, Jarir

    2014-03-01

    Fracture behaviour of round blank polycrystalline tungsten was studied by means of three point bending Fracture-Mechanical (FM) tests at temperatures between RT and 1000 °C and under high vacuum. To study the influence of the anisotropic microstructure on the fracture toughness (FT) and ductile-to-brittle transition (DBT) the specimens were extracted in three different, i.e. longitudinal, radial and circumferential orientations. The FM tests yielded distinctive fracture behaviour for each specimen orientation. The crack propagation was predominantly intergranular for longitudinal orientation up to 600 °C, whereas transgranular cleavage was observed at low test temperatures for radial and circumferentially oriented specimens. At intermediate test temperatures the change of the fracture mode took place for radial and circumferential orientations. Above 800 °C all three specimen types showed large ductile deformation without noticeable crack advancement. For longitudinal specimens the influence of the loading rate on the FT and DBT was studied in the loading rate range between 0.06 and 18 MPa m1/2/s. Though an increase of the FT was observed for the lowest loading rate, no resolvable dependence of the DBT on the loading rate was found partly due to loss of FT validity. A Master Curve approach is proposed to describe FT vs. test temperature data on polycrystalline tungsten. Fracture safe design space was identified by analysis compiled FT data.

  8. Low temperature grown polycrystalline La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films on amorphous SiO{sub 2} substrates by rf magnetron sputtering

    SciTech Connect

    Choi, Sun Gyu; Sivasankar Reddy, A.; Park, Hyung-Ho; Yang, Woo Seok; Ryu, Hojun; Yu, Byoung-Gon

    2009-07-15

    The La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films have been prepared on amorphous SiO{sub 2} substrates by a rf magnetron sputtering technique under various oxygen flow rates and rf powers at a relatively low substrate temperature of 350 deg. C. The effects of oxygen flow rate and rf power on their physical properties were systematically investigated. X-ray diffraction results show that the growth orientation and crystallinity of the films were affected by rf power and oxygen flow rate. The electrical resistivity of the films was reduced with increasing oxygen flow rate and rf power due to enhanced {l_brace}100{r_brace} growth plane orientation and enlarged grain size of the films. In addition, a relatively high temperature coefficient of resistance value of -2.4% was obtained in the present investigation even with low deposition temperature.

  9. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wrigley, C. Y.

    1985-01-01

    Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

  10. Polycrystalline Silicon: a Biocompatibility Assay

    SciTech Connect

    Pecheva, E.; Fingarova, D.; Pramatarova, L.; Hikov, T.; Laquerriere, P.; Bouthors, Sylvie; Dimova-Malinovska, D.; Montgomery, P.

    2010-01-21

    Polycrystalline silicon (poly-Si) layers were functionalized through the growth of biomimetic hydroxyapatite (HA) on their surface. HA is the mineral component of bones and teeth and thus possesses excellent bioactivity and biocompatibility. MG-63 osteoblast-like cells were cultured on both HA-coated and un-coated poly-Si surfaces for 1, 3, 5 and 7 days and toxicity, proliferation and cell morphology were investigated. The results revealed that the poly-Si layers were bioactive and compatible with the osteoblast-like cells. Nevertheless, the HA coating improved the cell interactions with the poly-Si surfaces based on the cell affinity to the specific chemical composition of the bone-like HA and/or to the higher HA roughness.

  11. Shock waves in polycrystalline iron.

    PubMed

    Kadau, Kai; Germann, Timothy C; Lomdahl, Peter S; Albers, Robert C; Wark, Justin S; Higginbotham, Andrew; Holian, Brad Lee

    2007-03-30

    The propagation of shock waves through polycrystalline iron is explored by large-scale atomistic simulations. For large enough shock strengths the passage of the wave causes the body-centered-cubic phase to transform into a close-packed phase with most structure being isotropic hexagonal-close-packed (hcp) and, depending on shock strength and grain orientation, some fraction of face-centered-cubic (fcc) structure. The simulated shock Hugoniot is compared to experiments. By calculating the extended x-ray absorption fine structure (EXAFS) directly from the atomic configurations, a comparison to experimental EXAFS measurements of nanosecond-laser shocks shows that the experimental data is consistent with such a phase transformation. However, the atomistically simulated EXAFS spectra also show that an experimental distinction between the hcp or fcc phase is not possible based on the spectra alone.

  12. Interface scattering in polycrystalline thermoelectrics

    SciTech Connect

    Popescu, Adrian; Haney, Paul M.

    2014-03-28

    We study the effect of electron and phonon interface scattering on the thermoelectric properties of disordered, polycrystalline materials (with grain sizes larger than electron and phonons' mean free path). Interface scattering of electrons is treated with a Landauer approach, while that of phonons is treated with the diffuse mismatch model. The interface scattering is embedded within a diffusive model of bulk transport, and we show that, for randomly arranged interfaces, the overall system is well described by effective medium theory. Using bulk parameters similar to those of PbTe and a square barrier potential for the interface electron scattering, we identify the interface scattering parameters for which the figure of merit ZT is increased. We find the electronic scattering is generally detrimental due to a reduction in electrical conductivity; however, for sufficiently weak electronic interface scattering, ZT is enhanced due to phonon interface scattering.

  13. Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature.

    PubMed

    Voyles, P M; Gerbi, J E; Treacy, M M; Gibson, J M; Abelson, J R

    2001-06-11

    Using fluctuation electron microscopy, we have observed an increase in the mesoscopic spatial fluctuations in the diffracted intensity from vapor-deposited silicon thin films as a function of substrate temperature from the amorphous to polycrystalline regimes. We interpret this increase as an increase in paracrystalline medium-range order in the sample. A paracrystal consists of topologically crystalline grains in a disordered matrix; in this model the increase in ordering is caused by an increase in the grain size or density. Our observations are counter to the previous belief that the amorphous to polycrystalline transition is a discontinuous disorder-order phase transition.

  14. Defect engineering by ultrasound treatment in polycrystalline silicon

    SciTech Connect

    Ostapenko, S.; Jastrzebski, L.

    1995-08-01

    By applying ultrasound treatment (UST) to bulk and thin film polycrystalline Si (poly-Si) we have found a dramatic improvement of recombination and transport properties. The increasing of minority carrier lifetime by as much as one order of magnitude was found in short diffusion length regions, while exhibiting a strong dispersion for entire solar-grade poly-Si wafer. Relevant mechanisms are attributed to ultrasound processing on crystallographic defects, as well as UST stimulated dissociation of Fe-B pairs followed by Fe{sub i} gettering. A spectacular improvement of hydrogenation efficiency in poly-Si thin-films on glass substrate is demonstrated by resistivity study and confirmed using spatially resolved photoluminescence and nanoscale contact potential difference mapping. By applying UST to commercial solar cells we found the increasing of cell efficiency at low light excitation.

  15. Development of transparent polycrystalline beta-silicon carbide

    NASA Astrophysics Data System (ADS)

    Bayya, Shyam S.; Villalobos, Guillermo R.; Hunt, Michael P.; Sanghera, Jasbinder S.; Sadowski, Bryan M.; Aggarwal, Ishwar D.; Cinibulk, Michael; Carney, Carmen; Keller, Kristin

    2013-09-01

    Transparent beta-SiC is of great interest because its high strength, low coefficient of thermal expansion, very high thermal conductivity, and cubic crystal structure give it a very high thermal shock resistance. A transparent, polycrystalline beta-SiC window will find applications in armor, hypersonic missiles, and thermal control for thin disc lasers. SiC is currently available as either small transparent vapor grown disks or larger opaque shapes. Neither of which are useful in window applications. We are developing sintering technology to enable transparent SiC ceramics. This involves developing procedures to make high purity powders and studying their densification behavior. We have been successful in demonstrating transparency in thin sections using Field Assisted Sintering Technology (FAST). This paper will discuss the reaction mechanisms in the formation of beta-SiC powder and its sintering behavior in producing transparent ceramics.

  16. Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells; Annual subcontract report, 1 March 1992--28 February 1993

    SciTech Connect

    Gray, J.L.; Schwartz, R.J.; Lee, Y.J.

    1994-03-01

    Solar cells operate by converting the radiation power from sun light into electrical power through photon absorption by semiconductor materials. The elemental and compound material systems widely used in photovoltaic applications can be produced in a variety of crystalline and non-crystalline forms. Although the crystalline group of materials have exhibited high conversion efficiencies, their production cost are substantially high. Several candidates in the poly- and micro-crystalline family of materials have recently gained much attention due to their potential for low cost manufacturability, stability, reliability and good performance. Among those materials, CuInSe{sub 2} and CdTe are considered to be the best choices for production of thin film solar cells because of the good optical properties and almost ideal band gap energies. Considerable progress was made with respect to cell performance and low cost manufacturing processes. Recently conversion efficiencies of 14.1 and 14.6% have been reported for CuInSe{sub 2} and CdTe based solar cells respectively. Even though the efficiencies of these cells continue to improve, they are not fully understood materials and there lies an uncertainty in their electrical properties and possible attainable performances. The best way to understand the details of current transport mechanisms and recombinations is to model the solar cells numerically. By numerical modeling, the processes which limit the cell performance can be sought and therefore, the most desirable designs for solar cells utilizing these materials as absorbers can be predicted. The problems with numerically modeling CuInSe{sub 2} and CdTe solar cells are that reported values of the pertinent material parameters vary over a wide range, and some quantities such as carrier concentration are not explicitly controlled.

  17. Bragg coherent diffractive imaging of single-grain defect dynamics in polycrystalline films

    DOE PAGES

    Yau, Allison; Cha, Wonsuk; Kanan, Matthew W.; ...

    2017-05-19

    Polycrystalline material properties depend on the distribution and interactions of their crystalline grains. In particular, grain boundaries and defects are crucial in determining their response to external stimuli. A long-standing challenge is thus to observe individual grains, defects, and strain dynamics inside functional materials. Here we report a technique capable of revealing grain heterogeneity, including strain fields and individual dislocations, that can be used under operando conditions in reactive environments: grain Bragg coherent diffractive imaging (gBCDI). Using a polycrystalline gold thin film subjected to heating, we show how gBCDI resolves grain boundary and dislocation dynamics in individual grains in three-dimensionalmore » detail with 10-nanometer spatial and subangstrom displacement field resolution. Finally, these results pave the way for understanding polycrystalline material response under external stimuli and, ideally, engineering particular functions.« less

  18. Crystallographic Characterization on Polycrystalline Ni-Mn-Ga Alloys with Strong Preferred Orientation

    PubMed Central

    Li, Zongbin; Yang, Bo; Zou, Naifu; Zhang, Yudong; Esling, Claude; Gan, Weimin; Zhao, Xiang; Zuo, Liang

    2017-01-01

    Heusler type Ni-Mn-Ga ferromagnetic shape memory alloys can demonstrate excellent magnetic shape memory effect in single crystals. However, such effect in polycrystalline alloys is greatly weakened due to the random distribution of crystallographic orientation. Microstructure optimization and texture control are of great significance and challenge to improve the functional behaviors of polycrystalline alloys. In this paper, we summarize our recent progress on the microstructure control in polycrystalline Ni-Mn-Ga alloys in the form of bulk alloys, melt-spun ribbons and thin films, based on the detailed crystallographic characterizations through neutron diffraction, X-ray diffraction and electron backscatter diffraction. The presented results are expected to offer some guidelines for the microstructure modification and functional performance control of ferromagnetic shape memory alloys. PMID:28772826

  19. Polycrystalline configurations that maximize electrical resistivity

    NASA Astrophysics Data System (ADS)

    Nesi, Vincenzo; Milton, Graeme W.

    A lower bound on the effective conductivity tensor of polycrystalline aggregates formed from a single basic crystal of conductivity σ was recently established by Avellaneda. Cherkaev, Lurie and Milton. The bound holds for any basic crystal, but for isotropic aggregates of a uniaxial crystal, the bound is achieved by a sphere assemblage model of Schulgasser. This left open the question of attainability of the bound when the crystal is not uniaxial. The present work establishes that the bound is always attained by a rather large class of polycrystalline materials. These polycrystalline materials, with maximal electrical resistivity, are constructed by sequential lamination of the basic crystal and rotations of itself on widely separated length scales. The analysis is facilitated by introducing a tensor S = 0( 0I + σ) -1 where 0 > 0 is chosen so that Tr S = 1. This tensor s is related to the electric field in the optimal polycrystalline configurations.

  20. Efficient Process for Making Polycrystalline Silicon

    NASA Technical Reports Server (NTRS)

    Mccormick, J. R.; Plahutnik, F. JR.; Sawyer, D. H.; Arvidson, A. N.; Goldfarb, S. M.

    1985-01-01

    Solar cells made with lower capital and operating costs. Process based on chemical-vapor deposition (CVD) of dichlorosilane produces high-grade polycrystalline silicon for solar cells. Process has potential as cost-effective replacement for CVD of trichlorosilane.

  1. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1983-01-01

    The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

  2. Improving Solar Cells With Polycrystalline Silicon

    NASA Technical Reports Server (NTRS)

    Rohatgi, Ajeet; Campbell, Robert B.; Rai-Choudhury, Prosenjit

    1987-01-01

    In proposed solar-cell design, layers of polycrystalline silicon grown near front metal grid and back metal surface. Net electrical effect increases open-circuit voltage and short-circuit current, resulting in greater cell power output and energy conversion efficiency. Solar-cell configuration differs from existing one in that layers of doped polycrystalline silicon added to reduce recombination in emitter and back surface field regions.

  3. Ultrasonic velocities in anisotropic polycrystalline aggregates

    NASA Astrophysics Data System (ADS)

    Sayers, C. M.

    1982-04-01

    The ultrasonic velocities in a polycrystalline aggregate of cubic crystals with orthorhombic symmetry are derived. Use is made of the formalism of Roe for treating the texture of polycrystalline aggregates. It is shown how information about the crystallite orientation distribution function can be derived from ultrasonic velocity measurements. This enables the construction of ultrasonic pole figures, which may be compared with those obtained with neutron diffraction. Application is made to the effect of texture on ultrasonic propagation in austenitic welds.

  4. Possible new edge barriers in polycrystalline superconductors

    NASA Astrophysics Data System (ADS)

    Belevtsov, L. V.

    2002-09-01

    We present a theoretical prediction of the new edge barriers for Abrikosov vortex penetration into polycrystalline superconductors. The traditional Bean-Livingston surface barrier is governed by the strength of the external field. Edge barriers in polycrystalline superconductors are also governed by the external field as well as by the anisotropy ratio, grain-coupling strength and grain size. We support our theory with concrete calculation of the critical current density in both high-Tc oxide and MgB2 superconductors.

  5. Hydrogen migration in polycrystalline silicon

    SciTech Connect

    Nickel, N.H.; Jackson, W.B.; Walker, J.

    1996-03-01

    Hydrogen migration in solid-state crystallized and low-pressure chemical-vapor-deposited (LPCVD) polycrystalline silicon (poly-Si) was investigated by deuterium diffusion experiments. The concentration profiles of deuterium, introduced into the poly-Si samples either from a remote D plasma or from a deuterated amorphous-silicon layer, were measured as a function of time and temperature. At high deuterium concentrations the diffusion was dispersive depending on exposure time. The dispersion is consistent with multiple trapping within a distribution of hopping barriers. The data can be explained by a two-level model used to explain diffusion in hydrogenated amorphous silicon. The energy difference between the transport level and the deuterium chemical potential was found to be about 1.2{endash}1.3 eV. The shallow levels for hydrogen trapping are about 0.5 eV below the transport level, while the deep levels are about 1.5{endash}1.7 eV below. The hydrogen chemical potential {mu}{sub H} decreases as the temperature increases. At lower concentrations, {mu}{sub H} was found to depend markedly on the method used to prepare the poly-Si, a result due in part to the dependence of crystallite size on the deposition process. Clear evidence for deuterium deep traps was found only in the solid-state crystallized material. The LPCVD-grown poly-Si, with columnar grains extending through the film thickness, displayed little evidence of deep trapping, and exhibited enhanced D diffusion. Many concentration profiles in the columnar LPCVD material indicated complex diffusion behavior, perhaps reflecting spatial variations of trap densities, complex formation, and/or multiple transport paths. Many aspects of the diffusion in poly-Si are consistent with diffusion data obtained in amorphous silicon. {copyright} {ital 1996 The American Physical Society.}

  6. Improvement in pixel signal uniformity of polycrystalline mercuric iodide films for digital X-ray imaging

    NASA Astrophysics Data System (ADS)

    Oh, Kyungmin; Kim, Jinseon; Shin, Jungwook; Heo, Seunguk; Cho, Gyuseok; Kim, Daekuk; Park, Jigoon; Nam, Sanghee

    2014-03-01

    We investigated polycrystalline mercuric iodide (HgI2) that exhibits uniform pixel signals for its use in digital X-ray imaging. To fabricate thin polycrystalline HgI2 films, the particle-in-binder (PIB) method is used because it enables the fabrication of X-ray conversion films at a low temperature and a normal pressure. Moreover, it has a large-scale deposition capacity at a low cost. Although the thin layers fabricated by the PIB method have such advantages, they are chemically unstable and show poor reproducibility and nonuniform X-ray response. To solve these problems, in this study, additional physical and chemical treatments were performed along with the PIB method after taking the size confinement effect of photoconductive particles into consideration. Morphological and electrical properties were measured to investigate the effects of the physical and chemical treatments.

  7. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition

    NASA Astrophysics Data System (ADS)

    Trefny, J. U.; Furtak, T. E.; Williamson, D. L.; Kim, D.

    1994-07-01

    This report describes the principal results of work performed during the second year of a 3-year program at the Colorado School of Mines (CSM). The work on transparent conducting oxides was carried out primarily by CSM students at NREL and is described in three publications listed in Appendix C. The high-quality ZnO produced from the work was incorporated into a copper indium diselenide cell that exhibited a world-record efficiency of 16.4%. Much of the time was devoted to the improvement of cadmium sulfide films deposited by chemical bath deposition methods and annealed with or without a cadmium chloride treatment. Progress was also made in the electrochemical deposition of cadmium telluride. High-quality films yielding CdS/CdTe/Au cells of greater than 10% efficiency are now being produced on a regular basis. We explored the use of zinc telluride back contacts to form an n-i-p cell structure as previously used by Ametek. We began small-angle x-ray scattering (SAXS) studies to characterize crystal structures, residual stresses, and microstructures of both CdTe and CdS. Large SAXS signals were observed in CdS, most likely because of scattering from gain boundaries. The signals observed to date from CdTe are much weaker, indicating a more homogeneous microstructure. We began to use the ADEPT modeling program, developed at Purdue University, to guide our understanding of the CdS/CdTe cell physics and the improvements that will most likely lead to significantly enhanced efficiencies.

  8. Spectroscopic characterization of charged defects in polycrystalline pentacene by time- and wavelength-resolved electric force microscopy.

    PubMed

    Luria, Justin L; Schwarz, Kathleen A; Jaquith, Michael J; Hennig, Richard G; Marohn, John A

    2011-02-01

    Spatial maps of topography and trapped charge are acquired for polycrystalline pentacene thin-film transistors using electric and atomic force microscopy. In regions of trapped charge, the rate of trap clearing is studied as a function of the wavelength of incident radiation.

  9. Si nanotubes and nanospheres with two-dimensional polycrystalline walls.

    PubMed

    Castrucci, Paola; Diociaiuti, Marco; Tank, Chiti Manohar; Casciardi, Stefano; Tombolini, Francesca; Scarselli, Manuela; De Crescenzi, Maurizio; Mathe, Vikas Laxman; Bhoraskar, Sudha Vasant

    2012-08-21

    We report on the characteristics of a new class of Si-based nanotubes and spherical nanoparticles synthesized by the dc-arc plasma method in a mixture of argon and hydrogen. These two nanostructures share common properties: they are hollow and possess very thin, highly polycrystalline and mainly oxidized walls. In particular, we get several hints indicating that their walls could constitute only one single Si oxidized layer. Moreover, we find that only the less oxidized nanotubes exhibit locally atomic ordered, snakeskin-like areas which possess a hexagonal arrangement which can be interpreted either as an sp(2) or sp(3) hybridized Si or Si-H layer. Their ability to not react with oxygen seems to suggest the presence of sp(2) configuration or the formation of silicon-hydrogen bonding.

  10. Preparation and adhesion of ultrathin polyimide films on polycrystalline silver

    NASA Astrophysics Data System (ADS)

    Grunze, M.; Lamb, R. N.

    1987-01-01

    4.4-oxydianiline (ODA) and 1,2,3,5-benzenetetracarboxylic anhydride (PMDA) were deposited from the vapor phase onto a polycrystalline silver substrate and polymerization of the two components to form ultrathin polyimide films ( d≈ 11 Å) was followed by X-ray photoelectron spectroscopy. Both PMDA and ODA chemisorb on the clean surface under partial fragmentation. Co-deposition of ODA and PMDA followed by heating of the substrate led to formation of thermally stable ( T<450°C) polyimide films. Our data indicate that adhesion of the polyimide film to the surface involves chemical bonding to fragmented PMDA and/or ODA chemisorbed on the substrate. Our experiments show that polyimide films can be prepared sufficiently thin to allow the application of surface sensitive techniques to probe the substrate-polymer interface and to study the basic physics and chemistry of adhesion.

  11. The electrical conductivity of polycrystalline metallic films

    NASA Astrophysics Data System (ADS)

    Moraga, Luis; Arenas, Claudio; Henriquez, Ricardo; Bravo, Sergio; Solis, Basilio

    2016-10-01

    We calculate the electrical conductivity of polycrystalline metallic films by means of a semi-numerical procedure that provides solutions of the Boltzmann transport equation, that are essentially exact, by summing over classical trajectories according to Chambers' method. Following Mayadas and Shatzkes (MS), grain boundaries are modeled as an array of parallel plane barriers situated perpendicularly to the direction of the current. Alternatively, according to Szczyrbowski and Schmalzbauer (SS), the model consists in a triple array of these barriers in mutual perpendicular directions. The effects of surface roughness are described by means of Fuchs' specularity parameters. Following SS, the scattering properties of grain boundaries are taken into account by means of another specularity parameter and a probability of coherent passage. The difference between the sum of these and one is the probability of diffuse scattering. When this formalism is compared with the approximate formula of Mayadas and Shatzkes (Phys. Rev. B 1, 103 (1986)) it is shown that the latter greatly overestimates the film resistivity over most values of the reflectivity of the grain boundaries. The dependence of the conductivity of thin films on the probability of coherent passage and grain diameters is examined. In accordance with MS we find that the effects of disorder in the distribution of grain diameters is quite small. Moreover, we find that it is not safe to neglect the effects of the scattering by the additional interfaces created by stacked grains. However, when compared with recent resitivity-thickness data, it is shown that all three formalisms can provide accurate fits to experiment. In addition, it is shown that, depending on the respective reflectivities and distance from a surface, some of these interfaces may increase or diminish considerably the conductivity of the sample. As an illustration of this effect, we show a tentative fit of resistivity data of gold films measured by

  12. Process Research of Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1984-01-01

    A passivation process (hydrogenation) that will improve the power generation of solar cells fabricated from presently produced, large grain, cast polycrystalline silicon (Semix), a potentially low cost material are developed. The first objective is to verify the operation of a DC plasma hydrogenation system and to investigate the effect of hydrogen on the electrical performance of a variety of polycrystalline silicon solar cells. The second objective is to parameterize and optimize a hydrogenation process for cast polycrystalline silicon, and will include a process sensitivity analysis. The sample preparation for the first phase is outlined. The hydrogenation system is described, and some early results that were obtained using the hydrogenation system without a plasma are summarized. Light beam induced current (LBIC) measurements of minicell samples, and their correlation to dark current voltage characteristics, are discussed.

  13. Scaling properties of polycrystalline graphene: a review

    NASA Astrophysics Data System (ADS)

    Isacsson, Andreas; Cummings, Aron W.; Colombo, Luciano; Colombo, Luigi; Kinaret, Jari M.; Roche, Stephan

    2017-03-01

    We present an overview of the electrical, mechanical, and thermal properties of polycrystalline graphene. Most global properties of this material, such as the charge mobility, thermal conductivity, or Young’s modulus, are sensitive to its microstructure, for instance the grain size and the presence of line or point defects. Both the local and global features of polycrystalline graphene have been investigated by a variety of simulations and experimental measurements. In this review, we summarize the properties of polycrystalline graphene, and by establishing a perspective on how the microstructure impacts its large-scale physical properties, we aim to provide guidance for further optimization and improvement of applications based on this material, such as flexible and wearable electronics, and high-frequency or spintronic devices.

  14. Elastic properties of polycrystalline dense matter

    NASA Astrophysics Data System (ADS)

    Kobyakov, D.; Pethick, C. J.

    2015-04-01

    Elastic properties of the solid regions of neutron star crusts and white dwarfs play an important role in theories of stellar oscillations. Matter in compact stars is presumably polycrystalline and, since the elastic properties of single crystals of such matter are very anisotropic, it is necessary to relate elastic properties of the polycrystal to those of a single crystal. We calculate the effective shear modulus of polycrystalline matter with randomly oriented crystallites using a self-consistent theory that has been very successful in applications to terrestrial materials and show that previous calculations overestimate the shear modulus by approximately 28 per cent.

  15. Orientation imaging microscopy of polycrystalline sodium chloride

    SciTech Connect

    Staiger, M.P.; Kolbeinsson, I.; Newman, J.; Woodfield, T.; Sato, T.

    2010-04-15

    A novel preparation technique is described that makes possible grain size analysis of polycrystalline NaCl using orientation imaging microscopy via electron backscatter diffraction (EBSD). The preparation methodology is specifically developed to overcome difficulties in preparing microporous NaCl for microscopy. The grain size and crystallographic texture of polycrystalline NaCl samples, prepared via solution pressure and sintered in the range of 650-780 deg. C, were able to be measured successfully with EBSD. The limitations of the preparation technique for EBSD analysis of NaCl are also discussed.

  16. Process Research On Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Wohlgemuth, J. H.; Culik, J. S.

    1982-01-01

    The mechanisms limiting performance in polycrystalline silicon was determined. The initial set of experiments in this task entails the fabrication of cells of various thicknesses for four different bulk resistivities between 0.1 and 10 omega-cm. The results for the first two lots are presented.

  17. Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby

    DOEpatents

    Gonzalez, Franklin N.; Neugroschel, Arnost

    1984-02-14

    A new solar cell structure is provided which will increase the efficiency of polycrystalline solar cells by suppressing or completely eliminating the recombination losses due to the presence of grain boundaries. This is achieved by avoiding the formation of the p-n junction (or other types of junctions) in the grain boundaries and by eliminating the grain boundaries from the active area of the cell. This basic concept can be applied to any polycrystalline material; however, it will be most beneficial for cost-effective materials having small grains, including thin film materials.

  18. Polycrystalline silicon on tungsten substrates

    NASA Technical Reports Server (NTRS)

    Bevolo, A. J.; Schmidt, F. A.; Shanks, H. R.; Campisi, G. J.

    1979-01-01

    Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

  19. Polycrystalline silicon on tungsten substrates

    NASA Technical Reports Server (NTRS)

    Bevolo, A. J.; Schmidt, F. A.; Shanks, H. R.; Campisi, G. J.

    1979-01-01

    Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

  20. Stochastic multiscale modeling of polycrystalline materials

    NASA Astrophysics Data System (ADS)

    Wen, Bin

    Mechanical properties of engineering materials are sensitive to the underlying random microstructure. Quantification of mechanical property variability induced by microstructure variation is essential for the prediction of extreme properties and microstructure-sensitive design of materials. Recent advances in high throughput characterization of polycrystalline microstructures have resulted in huge data sets of microstructural descriptors and image snapshots. To utilize these large scale experimental data for computing the resulting variability of macroscopic properties, appropriate mathematical representation of microstructures is needed. By exploring the space containing all admissible microstructures that are statistically similar to the available data, one can estimate the distribution/envelope of possible properties by employing efficient stochastic simulation methodologies along with robust physics-based deterministic simulators. The focus of this thesis is on the construction of low-dimensional representations of random microstructures and the development of efficient physics-based simulators for polycrystalline materials. By adopting appropriate stochastic methods, such as Monte Carlo and Adaptive Sparse Grid Collocation methods, the variability of microstructure-sensitive properties of polycrystalline materials is investigated. The primary outcomes of this thesis include: (1) Development of data-driven reduced-order representations of microstructure variations to construct the admissible space of random polycrystalline microstructures. (2) Development of accurate and efficient physics-based simulators for the estimation of material properties based on mesoscale microstructures. (3) Investigating property variability of polycrystalline materials using efficient stochastic simulation methods in combination with the above two developments. The uncertainty quantification framework developed in this work integrates information science and materials science, and

  1. Edge determination for polycrystalline silicon lines on gate oxide

    NASA Astrophysics Data System (ADS)

    Villarrubia, John S.; Vladar, Andras E.; Lowney, Jeremiah R.; Postek, Michael T., Jr.

    2001-08-01

    In a scanning electron microscope (SEM) top-down secondary electron image, areas within a few tens of nanometers of the line edges are characteristically brighter than the rest of the image. In general, the shape of the secondary electron signal within such edge regions depends upon the energy and spatial distribution of the electron beam and the sample composition, and it is sensitive to small variations in sample geometry. Assigning edge shape and position is done by finding a model sample that is calculated, on the basis of a mathematical model of the instrument-sample interaction, to produce an image equal to the one actually observed. Edge locations, and consequently line widths, are then assigned based upon this model sample. In previous years we have applied this strategy to lines with geometry constrained by preferential etching of single crystal silicon. With this study we test the procedure on polycrystalline silicon lines. Polycrystalline silicon lines fabricated according to usual industrial processes represent a commercially interesting albeit technically more challenging application of this method. With the sample geometry less constrained a priori, a larger set of possible sample geometries must be modeled and tested for a match to the observed line scan, and the possibility of encountering multiple acceptable matches is increased. For this study we have implemented a data analysis procedure that matches measured image line scans to a precomputed library of sample shapes and their corresponding line scans. Linewidth test patterns containing both isolated and dense lines separated form the underlying silicon substrate by a thin gate oxide have been fabricated. Line scans from test pattern images have been fitted to the library of modeled shapes.

  2. Development and evaluation of polycrystalline cadmium telluride dosimeters for accurate quality assurance in radiation therapy

    NASA Astrophysics Data System (ADS)

    Oh, K.; Han, M.; Kim, K.; Heo, Y.; Moon, C.; Park, S.; Nam, S.

    2016-02-01

    For quality assurance in radiation therapy, several types of dosimeters are used such as ionization chambers, radiographic films, thermo-luminescent dosimeter (TLD), and semiconductor dosimeters. Among them, semiconductor dosimeters are particularly useful for in vivo dosimeters or high dose gradient area such as the penumbra region because they are more sensitive and smaller in size compared to typical dosimeters. In this study, we developed and evaluated Cadmium Telluride (CdTe) dosimeters, one of the most promising semiconductor dosimeters due to their high quantum efficiency and charge collection efficiency. Such CdTe dosimeters include single crystal form and polycrystalline form depending upon the fabrication process. Both types of CdTe dosimeters are commercially available, but only the polycrystalline form is suitable for radiation dosimeters, since it is less affected by volumetric effect and energy dependence. To develop and evaluate polycrystalline CdTe dosimeters, polycrystalline CdTe films were prepared by thermal evaporation. After that, CdTeO3 layer, thin oxide layer, was deposited on top of the CdTe film by RF sputtering to improve charge carrier transport properties and to reduce leakage current. Also, the CdTeO3 layer which acts as a passivation layer help the dosimeter to reduce their sensitivity changes with repeated use due to radiation damage. Finally, the top and bottom electrodes, In/Ti and Pt, were used to have Schottky contact. Subsequently, the electrical properties under high energy photon beams from linear accelerator (LINAC), such as response coincidence, dose linearity, dose rate dependence, reproducibility, and percentage depth dose, were measured to evaluate polycrystalline CdTe dosimeters. In addition, we compared the experimental data of the dosimeter fabricated in this study with those of the silicon diode dosimeter and Thimble ionization chamber which widely used in routine dosimetry system and dose measurements for radiation

  3. Grain boundary dominated ion migration in polycrystalline organic–inorganic halide perovskite films

    SciTech Connect

    Shao, Yuchuan; Fang, Yanjun; Li, Tao; Wang, Qi; Dong, Qingfeng; Deng, Yehao; Yuan, Yongbo; Wei, Haotong; Wang, Meiyu; Gruverman, Alexei; Shield, Jeffery; Huang, Jinsong

    2016-03-21

    The efficiency of perovskite solar cells is approaching that of single-crystalline silicon solar cells despite the presence of large grain boundary (GB) area in the polycrystalline thin films. Here, by using a combination of nanoscopic and macroscopic level measurements, we show that the ion migration in polycrystalline perovskites is dominated through GBs. Conducting atomic force microscopy measurements reveal much stronger hysteresis both for photocurrent and dark-current at the GBs than on the grains interiors, which can be explained by faster ion migration at the GBs. The dramatically enhanced ion migration results in a redistribution of ions along the GBs after electric poling, in contrast to the intact grain area. The perovskite single-crystal devices without GBs show negligible current hysteresis and no ion-migration signal. Furthermore, the discovery of dominating ion migration through GBs in perovskites can lead to broad applications in many types of devices including photovoltaics, memristors, and ion batteries.

  4. PCED2.0--a computer program for the simulation of polycrystalline electron diffraction pattern.

    PubMed

    Li, X Z

    2010-03-01

    A computer program for the simulation of polycrystalline electron diffraction patterns is described. PCED2.0, an upgraded version of the previous JECP/PCED, can be used as a teaching aid and research tool for phase identification, microstructure texture analysis, and phase fraction determination. In addition to kinematical theory for diffraction intensity calculation of polycrystalline samples, Blackman two-beam dynamical correction is included. March model is used for out-of-plane and in-plane texture simulation. A pseudo-Voigt function is used for the peak profile fitting of diffraction rings. User-friendly interface is improved in the handling of experimental diffraction data and the flexibility of indexing. Application of the program for the analysis of FePt thin films is given as an example.

  5. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1982-01-01

    The investigation of the performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was continued by fabricating a set of minicell wafers on a selection of 10 cm x 10 cm wafers. A minicell wafer consists of an array of small (approximately 0.2 sq cm in area) photodiodes which are isolated from one another by a mesa structure. The junction capacitance of each minicell was used to obtain the dopant concentration, and therefore the resistivity, as a function of position across each wafer. The results indicate that there is no significant variation in resistivity with position for any of the polycrystalline wafers, whether Semix or Wacker. However, the resistivity of Semix brick 71-01E did decrease slightly from bottom to top.

  6. Fluidized bed for production of polycrystalline silicon

    SciTech Connect

    Flagella, R.N.

    1992-08-18

    This patent describes a method for removing silicon powder particles from a reactor that produces polycrystalline silicon by the pyrolysis of a silane containing gas in a fluidized bed reaction zone of silicon seed particles. It comprises introducing the silane containing gas stream into the reaction zone of fluidized silicon seed particles; heterogeneously decomposing the silane containing gas under conditions; collecting the silicon product particles from the collection zone; and removing silicon powder particles from the reactor.

  7. High efficiency polycrystalline silicon solar cells using low temperature PECVD process

    SciTech Connect

    Elgamel, H.E.A.

    1998-10-01

    Conventionally directionally solidified (DS) and silicon film (SF) polycrystalline silicon solar cells are fabricated using gettering and low temperature plasma enhanced chemical vapor deposition (PECVD) passivation. Thin layer ({approximately}10 nm) of PECVD SiO{sub 2} is used to passivate the emitter of the solar cell, while direct hydrogen rf plasma and PECVD silicon nitride (Si{sub 3}N{sub 4}) are implemented to provide emitter and bulk passivation. It is found in this work that hydrogen rf plasma can significantly improve the solar cell blue and long wavelength responses when it is performed through a thin layer of PECVD Si{sub 3}N{sub 4}. High efficiency DS and SF polycrystalline silicon solar cells have been achieved using a simple solar cell process with uniform emitter, Al/POCL{sub 3} gettering, hydrogen rf plasma/PECVD Si{sub 3}N{sub 4} and PECVD SiO{sub 2} passivation. On the other hand, a comprehensive experimental study of the characteristics of the PECVD Si{sub 3}N{sub 4} layer and its role in improving the efficiency of polycrystalline silicon solar cells is carried out in this paper. For the polycrystalline silicon used in this investigation, it is found that the PECVD Si{sub 3}N{sub 4} layer doesn`t provide a sufficient cap for the out diffusion of hydrogen at temperatures higher than 500 C. Low temperature ({le}400 C) annealing of the PECVD Si{sub 3}N{sub 4} provides efficient hydrogen bulk passivation, while higher temperature annealing relaxes the deposition induced stress and improves mainly the short wavelength (blue) response of the solar cells.

  8. Effective structural properties in polycrystalline graphene

    NASA Astrophysics Data System (ADS)

    Hossain, Zubaer

    This talk will discuss effective structural properties in polycrystalline graphene under the presence of atomic scale heterogeneity. Polycrystallinity is ubiquitous in solids, but theories describing their effective behavior remain limited, particularly when heterogeneity is present in the form of nonuniform deformation or composition. Over the decades, exploration of the effective transport and strength properties of heterogeneous systems has been carried out mostly with random distribution of grains or regular periodic structures under various approximations, in translating the underlying physics into a single representative volume element. Although heterogeneity can play a critical role in modulating the basic behavior of low-dimensional materials, it is difficult to capture the local characteristics accurately by these approximations. Taking polycrystalline graphene as an example material, we study the effective structural properties (such as Young's Modulus, Poisson's ratio and Toughness) by using a combination of density functional theory and molecular dynamic simulations. We identify the key mechanisms that govern their effective behavior and exploit the understanding to engineer the behavior by doping with a carefully selected choice of chemical elements.

  9. Characterization of electrochemically modified polycrystalline platinum surfaces

    SciTech Connect

    Krebs, L.C.; Ishida, Takanobu.

    1991-12-01

    The characterization of electrochemically modified polycrystalline platinum surfaces has been accomplished through the use of four major electrochemical techniques. These were chronoamperometry, chronopotentiommetry, cyclic voltammetry, and linear sweep voltammetry. A systematic study on the under-potential deposition of several transition metals has been performed. The most interesting of these were: Ag, Cu, Cd, and Pb. It was determined, by subjecting the platinum electrode surface to a single potential scan between {minus}0.24 and +1.25 V{sub SCE} while stirring the solution, that the electrocatalytic activity would be regenerated. As a consequence of this study, a much simpler method for producing ultra high purity water from acidic permanganate has been developed. This method results in water that surpasses the water produced by pyrocatalytic distillation. It has also been seen that the wettability of polycrystalline platinum surfaces is greatly dependent on the quantity of oxide present. Oxide-free platinum is hydrophobic and gives a contact angle in the range of 55 to 62 degrees. We have also modified polycrystalline platinum surface with the electrically conducting polymer poly-{rho}-phenylene. This polymer is very stable in dilute sulfuric acid solutions, even under applied oxidative potentials. It is also highly resistant to electrochemical hydrogenation. The wettability of the polymer modified platinum surface is severely dependent on the choice of supporting electrolyte chosen for the electrochemical polymerization. Tetraethylammonium tetrafluoroborate produces a film that is as hydrophobic as Teflon, whereas tetraethylammonium perchlorate produces a film that is more hydrophilic than oxide-free platinum.

  10. Characterization of electrochemically modified polycrystalline platinum surfaces

    SciTech Connect

    Krebs, Leonard C.; Ishida, Takanobu

    1991-12-01

    The characterization of electrochemically modified polycrystalline platinum surfaces has been accomplished through the use of four major electrochemical techniques. These were chronoamperometry, chronopotentiommetry, cyclic voltammetry, and linear sweep voltammetry. A systematic study on the under-potential deposition of several transition metals has been performed. The most interesting of these were: Ag, Cu, Cd, and Pb. It was determined, by subjecting the platinum electrode surface to a single potential scan between -0.24 and +1.25 VSCE while stirring the solution, that the electrocatalytic activity would be regenerated. As a consequence of this study, a much simpler method for producing ultra high purity water from acidic permanganate has been developed. This method results in water that surpasses the water produced by pyrocatalytic distillation. It has also been seen that the wettability of polycrystalline platinum surfaces is greatly dependent on the quantity of oxide present. Oxide-free platinum is hydrophobic and gives a contact angle in the range of 55 to 62 degrees. We have also modified polycrystalline platinum surface with the electrically conducting polymer poly-ρ-phenylene. This polymer is very stable in dilute sulfuric acid solutions, even under applied oxidative potentials. It is also highly resistant to electrochemical hydrogenation. The wettability of the polymer modified platinum surface is severely dependent on the choice of supporting electrolyte chosen for the electrochemical polymerization. Tetraethylammonium tetrafluoroborate produces a film that is as hydrophobic as Teflon, whereas tetraethylammonium perchlorate produces a film that is more hydrophilic than oxide-free platinum.

  11. Thickness-dependent cooperative aging in polycrystalline films of antiferromagnet CoO

    NASA Astrophysics Data System (ADS)

    Ma, Tianyu; Cheng, Xiang; Boettcher, Stefan; Urazhdin, Sergei; Novozhilova, Lydia

    2016-07-01

    We demonstrate that thin polycrystalline films of antiferromagnet CoO, in bilayers with ferromagnetic Permalloy, exhibit slow power-law aging of their magnetization state. The aging characteristics are remarkably similar to those previously observed in thin epitaxial Fe50Mn50 films, indicating that these behaviors are likely generic to ferromagnet/antiferromagnet bilayers. In very thin films, aging is observed over a wide temperature range. In thicker CoO, aging effects become reduced at low temperatures. Aging entirely disappears for large CoO thicknesses. We also investigate the dependence of aging characteristics on temperature and magnetic history. Analysis shows that the observed behaviors are inconsistent with the Neel-Arrhenius model of thermal activation, and are instead indicative of cooperative aging of the antiferromagnet. Our results provide new insights into the mechanisms controlling the stationary states and dynamics of ferromagnet/antiferromagnet bilayers, and potentially other frustrated magnetic systems.

  12. Abnormality in fracture strength of polycrystalline silicene

    NASA Astrophysics Data System (ADS)

    Liu, Ning; Hong, Jiawang; Pidaparti, Ramana; Wang, Xianqiao

    2016-09-01

    Silicene, a silicon-based homologue of graphene, arouses great interest in nano-electronic devices due to its outstanding electronic properties. However, its promising electronic applications are greatly hindered by lack of understanding in the mechanical strength of silicene. Therefore, in order to design mechanically reliable devices with silicene, it is necessary to thoroughly explore the mechanical properties of silicene. Due to current fabrication methods, graphene is commonly produced in a polycrystalline form; the same may hold for silicene. Here we perform molecular dynamics simulations to investigate the mechanical properties of polycrystalline silicene. First, an annealing process is employed to construct a more realistic modeling structure of polycrystalline silicene. Results indicate that a more stable structure is formed due to the breaking and reformation of bonds between atoms on the grain boundaries. Moreover, as the grain size decreases, the efficiency of the annealing process, which is quantified by the energy change, increases. Subsequently, biaxial tensile tests are performed on the annealed samples in order to explore the relation between grain size and mechanical properties, namely in-plane stiffness, fracture strength and fracture strain etc. Results indicate that as the grain size decreases, the fracture strain increases while the fracture strength shows an inverse trend. The decreasing fracture strength may be partly attributed to the weakening effect from the increasing area density of defects which acts as the reservoir of stress-concentrated sites on the grain boundary. The observed crack localization and propagation and fracture strength are well-explained by a defect-pileup model.

  13. Superelastic effect in polycrystalline ferrous alloys.

    PubMed

    Omori, T; Ando, K; Okano, M; Xu, X; Tanaka, Y; Ohnuma, I; Kainuma, R; Ishida, K

    2011-07-01

    In superelastic alloys, large deformation can revert to a memorized shape after removing the stress. However, the stress increases with increasing temperature, which limits the practical use over a wide temperature range. Polycrystalline Fe-Mn-Al-Ni shape memory alloys show a small temperature dependence of the superelastic stress because of a small transformation entropy change brought about by a magnetic contribution to the Gibbs energies. For one alloy composition, the superelastic stress varies by 0.53 megapascal/°C over a temperature range from -196 to 240°C.

  14. Process for Polycrystalline film silicon growth

    DOEpatents

    Wang, Tihu; Ciszek, Theodore F.

    2001-01-01

    A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

  15. Polycrystalline gamma plutonium's elastic moduli versus temperature

    SciTech Connect

    Migliori, Albert; Betts, J; Trugman, A; Mielke, C H; Mitchell, J N; Ramos, M; Stroe, I

    2009-01-01

    Resonant ultrasound spectroscopy was used to measure the elastic properties of pure polycrystalline {sup 239}Pu in the {gamma} phase. Shear and longitudinal elastic moduli were measured simultaneously and the bulk modulus was computed from them. A smooth, linear, and large decrease of all elastic moduli with increasing temperature was observed. They calculated the Poisson ratio and found that it increases from 0.242 at 519 K to 0.252 at 571 K. These measurements on extremely well characterized pure Pu are in agreement with other reported results where overlap occurs.

  16. Ultrathin films of polycrystalline MnGa alloy with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Ono, Atsuo; Suzuki, Kazuya Z.; Ranjbar, Reza; Sugihara, Atsushi; Mizukami, Shigemi

    2017-02-01

    Room temperature growth of textured polycrystalline films of MnGa alloys using a CoGa buffer layer on a thermally oxidized Si substrate is demonstrated. MnGa thin films with a thickness of 2 nm exhibit out-of-plane rectangular hysteresis loops. A small saturation magnetization of about 200 emu/cm3 and a large perpendicular magnetic anisotropy of up to 3–5 Merg/cm3 were achieved for 2- and 3-nm-thick MnGa ultrathin films; such values have never been reported before, and they provide a pathway for integration with conventional Si technology.

  17. Synchrotron X-ray Microdiffraction Analysis of Proton Irradiated Polycrystalline Diamond Films

    NASA Technical Reports Server (NTRS)

    Newton, R. I.; Davidson, J. L.; Ice, G. E.; Liu, W.

    2004-01-01

    X-ray microdiffraction is a non-destructive technique that allows for depth-resolved, strain measurements with sub-micron spatial resolution. These capabilities make this technique promising for understanding the mechanical properties of MicroElectroMechanical Systems (MEMS). This investigation examined the local strain induced by irradiating a polycrystalline diamond thin film with a dose of 2x10(exp 17) H(+)per square centimeter protons. Preliminary results indicate that a measurable strain, on the order of 10(exp -3), was introduced into the film near the End of Range (EOR) region of the protons.

  18. Directed vapor deposition of amorphous and polycrystalline electronic materials: Nonhydrogenated a-Si

    SciTech Connect

    Groves, J.F.; Jones, S.H.; Globus, T.; Hsiung, L.M.; Wadley, H.

    1995-10-01

    A novel directed vapor deposition (DVD) process for creating amorphous and polycrystalline electronic materials is reported. Initial experimental results for DVD of nonhydrogenated a-Si indicate that growth rates at least between 0.02 and 1.0 {micro}m/min can be achieved. In this process, evaporated silicon is efficiently entrained in a previously formed low pressure supersonic He jet. The silicon is evaporated using a high energy, high voltage, electron beam. The collimated jet of He entrained with silicon is used to deposit thin films of a-Si at room temperature on glass substrates. Initial TEM microstructure analysis and optical absorption analysis is presented.

  19. Ultrafast dynamics of exciton fission in polycrystalline pentacene.

    PubMed

    Wilson, Mark W B; Rao, Akshay; Clark, Jenny; Kumar, R Sai Santosh; Brida, Daniele; Cerullo, Giulio; Friend, Richard H

    2011-08-10

    We use ultrafast transient absorption spectroscopy with sub-20 fs time resolution and broad spectral coverage to directly probe the process of exciton fission in polycrystalline thin films of pentacene. We observe that the overwhelming majority of initially photogenerated singlet excitons evolve into triplet excitons on an ∼80 fs time scale independent of the excitation wavelength. This implies that exciton fission occurs at a rate comparable to phonon-mediated exciton localization processes and may proceed directly from the initial, delocalized, state. The singlet population is identified due to the brief presence of stimulated emission, which is emitted at wavelengths which vary with the photon energy of the excitation pulse, a violation of Kasha's Rule that confirms that the lowest-lying singlet state is extremely short-lived. This direct demonstration that triplet generation is both rapid and efficient establishes multiple exciton generation by exciton fission as an attractive route to increased efficiency in organic solar cells. © 2011 American Chemical Society

  20. Electrical properties of polycrystalline methane hydrate

    USGS Publications Warehouse

    Du Frane, W. L.; Stern, L.A.; Weitemeyer, K.A.; Constable, S.; Pinkston, J.C.; Roberts, J.J.

    2011-01-01

    Electromagnetic (EM) remote-sensing techniques are demonstrated to be sensitive to gas hydrate concentration and distribution and complement other resource assessment techniques, particularly seismic methods. To fully utilize EM results requires knowledge of the electrical properties of individual phases and mixing relations, yet little is known about the electrical properties of gas hydrates. We developed a pressure cell to synthesize gas hydrate while simultaneously measuring in situ frequency-dependent electrical conductivity (σ). Synthesis of methane (CH4) hydrate was verified by thermal monitoring and by post run cryogenic scanning electron microscope imaging. Impedance spectra (20 Hz to 2 MHz) were collected before and after synthesis of polycrystalline CH4 hydrate from polycrystalline ice and used to calculate σ. We determined the σ of CH4 hydrate to be 5 × 10−5 S/m at 0°C with activation energy (Ea) of 30.6 kJ/mol (−15 to 15°C). After dissociation back into ice, σ measurements of samples increased by a factor of ~4 and Ea increased by ~50%, similar to the starting ice samples.

  1. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wrigley, C. Y.

    1984-01-01

    Results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Very small grain or short minority-carrier diffusion length silicon was used. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is sometimes 20 to 40 mV less. The goal was to minimize variations in open-circuit voltage and fill-factor caused by defects by passivating these defects using a hydrogenation process. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystaline silicon solar cells.

  2. Acidic magnetorheological finishing of infrared polycrystalline materials

    SciTech Connect

    Salzman, S.; Romanofsky, H. J.; West, G.; Marshall, K. L.; Jacobs, S. D.; Lambropoulos, J. C.

    2016-10-12

    Here, chemical-vapor–deposited (CVD) ZnS is an example of a polycrystalline material that is difficult to polish smoothly via the magnetorheological–finishing (MRF) technique. When MRF-polished, the internal infrastructure of the material tends to manifest on the surface as millimeter-sized “pebbles,” and the surface roughness observed is considerably high. The fluid’s parameters important to developing a magnetorheological (MR) fluid that is capable of polishing CVD ZnS smoothly were previously discussed and presented. These parameters were acidic pH (~4.5) and low viscosity (~47 cP). MRF with such a unique MR fluid was shown to reduce surface artifacts in the form of pebbles; however, surface microroughness was still relatively high because of the absence of a polishing abrasive in the formulation. In this study, we examine the effect of two polishing abrasives—alumina and nanodiamond—on the surface finish of several CVD ZnS substrates, and on other important IR polycrystalline materials that were finished with acidic MR fluids containing these two polishing abrasives. Surface microroughness results obtained were as low as ~28 nm peak-to-valley and ~6-nm root mean square.

  3. Reversible piezomagnetoelectric switching in bulk polycrystalline ceramics

    SciTech Connect

    Stevenson, T. Bennett, J.; Brown, A. P.; Wines, T.; Bell, A. J.; Comyn, T. P.; Smith, R. I.

    2014-08-01

    Magnetoelectric (ME) coupling in materials offer tremendous advantages in device functionality enabling technologies including advanced electronic memory, combining electronic speed, and efficiency with magnetic robustness. However, low cost polycrystalline ME materials are excluded from most commercial applications, operating only at cryogenic temperatures, impractically large electric/magnetic fields, or with low ME coefficients (1-100 mV/cm Oe). Despite this, the technological potential of single compound ME coupling has continued to drive research into multiferroics over the last two decades. Here we show that by manipulating the large induced atomic strain within the polycrystalline, room temperature multiferroic compound 0.7BiFeO{sub 3}–0.3PbTiO{sub 3}, we can induce a reversible, piezoelectric strain controlled ME effect. Employing an in situ neutron diffraction experiment, we have demonstrated that this piezomagnetoelectric effect manifests with an applied electric field >8 kV/mm at the onset of piezoelectric strain, engineered in to the compound by crystallographic phase mixing. This produces a remarkable intrinsic ME coefficient of 1276 mV/cm Oe, due to a strain driven modification to the oxygen sub-lattice, inducing an increase in magnetic moment per Fe{sup 3+} ion of +0.142 μ{sub B}. This work provides a framework for investigations into strain engineered nanostructures to realize low-cost ME devices designed from the atoms up, as well as contributing to the deeper understanding of single phase ME coupling mechanisms.

  4. Acidic magnetorheological finishing of infrared polycrystalline materials

    DOE PAGES

    Salzman, S.; Romanofsky, H. J.; West, G.; ...

    2016-10-12

    Here, chemical-vapor–deposited (CVD) ZnS is an example of a polycrystalline material that is difficult to polish smoothly via the magnetorheological–finishing (MRF) technique. When MRF-polished, the internal infrastructure of the material tends to manifest on the surface as millimeter-sized “pebbles,” and the surface roughness observed is considerably high. The fluid’s parameters important to developing a magnetorheological (MR) fluid that is capable of polishing CVD ZnS smoothly were previously discussed and presented. These parameters were acidic pH (~4.5) and low viscosity (~47 cP). MRF with such a unique MR fluid was shown to reduce surface artifacts in the form of pebbles; however,more » surface microroughness was still relatively high because of the absence of a polishing abrasive in the formulation. In this study, we examine the effect of two polishing abrasives—alumina and nanodiamond—on the surface finish of several CVD ZnS substrates, and on other important IR polycrystalline materials that were finished with acidic MR fluids containing these two polishing abrasives. Surface microroughness results obtained were as low as ~28 nm peak-to-valley and ~6-nm root mean square.« less

  5. Acidic magnetorheological finishing of infrared polycrystalline materials

    SciTech Connect

    Salzman, S.; Romanofsky, H. J.; West, G.; Marshall, K. L.; Jacobs, S. D.; Lambropoulos, J. C.

    2016-10-12

    Here, chemical-vapor–deposited (CVD) ZnS is an example of a polycrystalline material that is difficult to polish smoothly via the magnetorheological–finishing (MRF) technique. When MRF-polished, the internal infrastructure of the material tends to manifest on the surface as millimeter-sized “pebbles,” and the surface roughness observed is considerably high. The fluid’s parameters important to developing a magnetorheological (MR) fluid that is capable of polishing CVD ZnS smoothly were previously discussed and presented. These parameters were acidic pH (~4.5) and low viscosity (~47 cP). MRF with such a unique MR fluid was shown to reduce surface artifacts in the form of pebbles; however, surface microroughness was still relatively high because of the absence of a polishing abrasive in the formulation. In this study, we examine the effect of two polishing abrasives—alumina and nanodiamond—on the surface finish of several CVD ZnS substrates, and on other important IR polycrystalline materials that were finished with acidic MR fluids containing these two polishing abrasives. Surface microroughness results obtained were as low as ~28 nm peak-to-valley and ~6-nm root mean square.

  6. Development of Novel Polycrystalline Ceramic Scintillators

    SciTech Connect

    Wisniewska, Monika; Boatner, Lynn A; Neal, John S; Jellison Jr, Gerald Earle; Ramey, Joanne Oxendine; North, Andrea L; Wisniewski, Monica; Payzant, E Andrew; Howe, Jane Y; Lempicki, Aleksander; Brecher, Charlie; Glodo, J.

    2008-01-01

    For several decades most of the efforts to develop new scintillator materials have concentrated on high-light-yield inorganic single-crystals while polycrystalline ceramic scintillators, since their inception in the early 1980 s, have received relatively little attention. Nevertheless, transparent ceramics offer a promising approach to the fabrication of relatively inexpensive scintillators via a simple mechanical compaction and annealing process that eliminates single-crystal growth. Until recently, commonly accepted concepts restricted the polycrystalline ceramic approach to materials exhibiting a cubic crystal structure. Here, we report our results on the development of two novel ceramic scintillators based on the non-cubic crystalline materials: Lu SiO:Ce (LSO:Ce) and LaBr:Ce. While no evidence for texturing has been found in their ceramic microstructures, our LSO:Ce ceramics exhibit a surprisingly high level of transparency/ translucency and very good scintillation characteristics. The LSO:Ce ceramic scintillation reaches a light yield level of about 86% of that of a good LSO:Ce single crystal, and its decay time is even faster than in single crystals. Research on LaBr:Ce shows that translucent ceramics of the high-light-yield rare-earth halides can also be synthesized. Our LaBr:Ce ceramics have light yields above 42 000 photons/MeV (i.e., 70%of the single-crystal light yield).

  7. How resistive must grain boundaries in polycrystalline superconductors be, to limit J c?

    NASA Astrophysics Data System (ADS)

    Wang, Guanmei; Raine, Mark J.; Hampshire, Damian P.

    2017-10-01

    Although we can use misorientation angle to distinguish the grain boundaries that can carry high critical current density ({J}{{c}}) in high temperature superconductors (HTS) from those that cannot, there is no established normal state property equivalent. In this paper, we explore the superconducting and normal state properties of the grains and grain boundaries of polycrystalline YBa2Cu3O7-x (YBCO) using complementary magnetisation and transport measurements, and calculate how resistive grain boundaries must be to limit {J}{{c}} in polycrystalline superconductors. The average resistivity of the grain boundaries, {ρ }{{GB}}, in our micro- and nanocrystalline YBCO are 0.12 Ωm and 8.2 Ωm, values which are much higher than that of the grains ({ρ }{{G}}) and leads to huge {ρ }{{GB}}/{ρ }{{G}} values of 2 × 103 and 1.6 × 105 respectively. We find that the grain boundaries in our polycrystalline YBCO are sufficiently resistive that we can expect the transport {J}{{c}} to be several tens of orders of magnitude below the potential current density of the grains in our YBCO samples, as is found experimentally. Calculations presented show that increasing {J}{{c}} values by ˜2 orders of magnitude in high fields is still possible in all state-of-the-art technological high-field superconductors. We conclude: grain boundary engineering is unlikely to improve {J}{{c}} sufficiently in randomly aligned polycrystalline YBCO, to make it technologically useful for high-field applications; in low temperature superconducting intermetallics, such as Nb3Sn, large increases in {J}{{c}} may be achieved by completely removing the grain boundaries from these materials and, as is the case for thin films of Nb, Ba(FeCo)2As2 and HTS materials, by incorporating additional artificial pinning.

  8. Singlet exciton fission in polycrystalline pentacene: from photophysics toward devices.

    PubMed

    Wilson, Mark W B; Rao, Akshay; Ehrler, Bruno; Friend, Richard H

    2013-06-18

    Singlet exciton fission is the process in conjugated organic molecules bywhich a photogenerated singlet exciton couples to a nearby chromophore in the ground state, creating a pair of triplet excitons. Researchers first reported this phenomenon in the 1960s, an event that sparked further studies in the following decade. These investigations used fluorescence spectroscopy to establish that exciton fission occurred in single crystals of several acenes. However, research interest has been recently rekindled by the possibility that singlet fission could be used as a carrier multiplication technique to enhance the efficiency of photovoltaic cells. The most successful architecture to-date involves sensitizing a red-absorbing photoactive layer with a blue-absorbing material that undergoes fission, thereby generating additional photocurrent from higher-energy photons. The quest for improved solar cells has spurred a drive to better understand the fission process, which has received timely aid from modern techniques for time-resolved spectroscopy, quantum chemistry, and small-molecule device fabrication. However, the consensus interpretation of the initial studies using ultrafast transient absorption spectroscopy was that exciton fission was suppressed in polycrystalline thin films of pentacene, a material that would be otherwise expected to be an ideal model system, as well as a viable candidate for fission-sensitized photovoltaic devices. In this Account, we review the results of our recent transient absorption and device-based studies of polycrystalline pentacene. We address the controversy surrounding the assignment of spectroscopic features in transient absorption data, and illustrate how a consistent interpretation is possible. This work underpins our conclusion that singlet fission in pentacene is extraordinarily rapid (∼80 fs) and is thus the dominant decay channel for the photoexcited singlet exciton. Further, we discuss our demonstration that triplet excitons

  9. Modelling heat conduction in polycrystalline hexagonal boron-nitride films.

    PubMed

    Mortazavi, Bohayra; Pereira, Luiz Felipe C; Jiang, Jin-Wu; Rabczuk, Timon

    2015-08-19

    We conducted extensive molecular dynamics simulations to investigate the thermal conductivity of polycrystalline hexagonal boron-nitride (h-BN) films. To this aim, we constructed large atomistic models of polycrystalline h-BN sheets with random and uniform grain configuration. By performing equilibrium molecular dynamics (EMD) simulations, we investigated the influence of the average grain size on the thermal conductivity of polycrystalline h-BN films at various temperatures. Using the EMD results, we constructed finite element models of polycrystalline h-BN sheets to probe the thermal conductivity of samples with larger grain sizes. Our multiscale investigations not only provide a general viewpoint regarding the heat conduction in h-BN films but also propose that polycrystalline h-BN sheets present high thermal conductivity comparable to monocrystalline sheets.

  10. Modelling heat conduction in polycrystalline hexagonal boron-nitride films

    PubMed Central

    Mortazavi, Bohayra; Pereira, Luiz Felipe C.; Jiang, Jin-Wu; Rabczuk, Timon

    2015-01-01

    We conducted extensive molecular dynamics simulations to investigate the thermal conductivity of polycrystalline hexagonal boron-nitride (h-BN) films. To this aim, we constructed large atomistic models of polycrystalline h-BN sheets with random and uniform grain configuration. By performing equilibrium molecular dynamics (EMD) simulations, we investigated the influence of the average grain size on the thermal conductivity of polycrystalline h-BN films at various temperatures. Using the EMD results, we constructed finite element models of polycrystalline h-BN sheets to probe the thermal conductivity of samples with larger grain sizes. Our multiscale investigations not only provide a general viewpoint regarding the heat conduction in h-BN films but also propose that polycrystalline h-BN sheets present high thermal conductivity comparable to monocrystalline sheets. PMID:26286820

  11. Multiscale modeling of thermal conductivity of polycrystalline graphene sheets.

    PubMed

    Mortazavi, Bohayra; Pötschke, Markus; Cuniberti, Gianaurelio

    2014-03-21

    We developed a multiscale approach to explore the effective thermal conductivity of polycrystalline graphene sheets. By performing equilibrium molecular dynamics (EMD) simulations, the grain size effect on the thermal conductivity of ultra-fine grained polycrystalline graphene sheets is investigated. Our results reveal that the ultra-fine grained graphene structures have thermal conductivity one order of magnitude smaller than that of pristine graphene. Based on the information provided by the EMD simulations, we constructed finite element models of polycrystalline graphene sheets to probe the thermal conductivity of samples with larger grain sizes. Using the developed multiscale approach, we also investigated the effects of grain size distribution and thermal conductivity of grains on the effective thermal conductivity of polycrystalline graphene. The proposed multiscale approach on the basis of molecular dynamics and finite element methods could be used to evaluate the effective thermal conductivity of polycrystalline graphene and other 2D structures.

  12. Inverse pseudo Hall-Petch relation in polycrystalline graphene.

    PubMed

    Sha, Z D; Quek, S S; Pei, Q X; Liu, Z S; Wang, T J; Shenoy, V B; Zhang, Y W

    2014-08-08

    Understanding the grain size-dependent failure behavior of polycrystalline graphene is important for its applications both structurally and functionally. Here we perform molecular dynamics simulations to study the failure behavior of polycrystalline graphene by varying both grain size and distribution. We show that polycrystalline graphene fails in a brittle mode and grain boundary junctions serve as the crack nucleation sites. We also show that its breaking strength and average grain size follow an inverse pseudo Hall-Petch relation, in agreement with experimental measurements. Further, we find that this inverse pseudo Hall-Petch relation can be naturally rationalized by the weakest-link model, which describes the failure behavior of brittle materials. Our present work reveals insights into controlling the mechanical properties of polycrystalline graphene and provides guidelines for the applications of polycrystalline graphene in flexible electronics and nano-electronic-mechanical devices.

  13. Polycrystalline silicon ion sensitive field effect transistors

    NASA Astrophysics Data System (ADS)

    Yan, F.; Estrela, P.; Mo, Y.; Migliorato, P.; Maeda, H.; Inoue, S.; Shimoda, T.

    2005-01-01

    We report the operation of polycrystalline silicon ion sensitive field effect transistors. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with a Si3N4 sensing layer. Nearly ideal pH sensitivity (54mV /pH) and stable operation have been achieved. Temperature effects have been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The sensitivity to penicillin G is about 10mV/mM, in solutions with concentration lower than the saturation value, which is about 7 mM.

  14. Process Research of Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1984-01-01

    An investigation was begun into the usefulness of molecular hydrogen annealing on polycrystalline solar cells. No improvement was realized even after twenty hours of hydrogenation. Thus, samples were chosen on the basis of: (1) low open circuit voltage; (2) low shunt conductance; and (3) high light generated current. These cells were hydrogenated in molecular hydrogen at 300 C. The differences between the before and after hydrogenation values are so slight as to be negligible. These cells have light generated current densities that indicate long minority carrier diffusion lengths. The open circuit voltage appears to be degraded, and quasi-neutral recombination current enhanced. Therefore, molecular hydrogen is not usful for passivating electrically active defects.

  15. Tensile creep behavior of polycrystalline alumina fibers

    NASA Technical Reports Server (NTRS)

    Yun, H. M.; Goldsby, J. C.

    1993-01-01

    Tensile creep studies were conducted on polycrystalline Nextel 610 and Fiber FP alumina fibers with grain sizes of 100 and 300 nm, respectively. Test conditions were temperatures from 800 to 1050 C and stresses from 60 to 1000 MPa. For both fibers, only a small primary creep portion occurred followed by steady-state creep. The stress exponents for steady-state creep of Nextel 610 and Fiber FP were found to be about 3 and 1, respectively. At lower temperatures, below 1000 C, the finer grained Nextel 610 had a much higher 0.2 percent creep strength for 100 hr than the Fiber FP; while at higher temperatures, Nextel 610 had a comparable creep strength to the Fiber FP. The stress and grain size dependencies suggest Nextel 610 and Fiber FP creep rates are due to grain boundary sliding controlled by interface reaction and Nabarro-Herring mechanisms, respectively.

  16. Modeling of Irradiation Hardening of Polycrystalline Materials

    SciTech Connect

    Li, Dongsheng; Zbib, Hussein M.; Garmestani, Hamid; Sun, Xin; Khaleel, Mohammad A.

    2011-09-14

    High energy particle irradiation of structural polycrystalline materials usually produces irradiation hardening and embrittlement. The development of predict capability for the influence of irradiation on mechanical behavior is very important in materials design for next generation reactors. In this work a multiscale approach was implemented to predict irradiation hardening of body centered cubic (bcc) alpha-iron. The effect of defect density, texture and grain boundary was investigated. In the microscale, dislocation dynamics models were used to predict the critical resolved shear stress from the evolution of local dislocation and defects. In the macroscale, a viscoplastic self-consistent model was applied to predict the irradiation hardening in samples with changes in texture and grain boundary. This multiscale modeling can guide performance evaluation of structural materials used in next generation nuclear reactors.

  17. Reststrahlen band studies of polycrystalline beryllium oxide.

    PubMed

    Chibuye, T; Ribbing, C G; Wäckelgård, E

    1994-09-01

    New experimental bulk reflectance and emittance spectra from the 9-15-µm reststrahlen band region of polycrystallline beryllium oxide are reported. Note that the polycrystalline material exhibits a dip at 10 pm, which is not present in spectra for single crystals. The possible origins of this feature are discussed including absorption by a surfaceboscillation excited at boundaries of 20-µm crystalline grains. Owing to the reststrahlen band, beryllium oxide is selectively low, emitting in the primary atmospheric window, which makes this material useful for frost prevention when electrical conductors cannot be used. This protection is susceptible to reduction by surface contaminants from air pollution. Using an established acceleration procedure, we simulated such pollution, and the increase in emittance was measured. It was observed that the emissivity increased from 0.31 for a clean surface to 0.36 for a surface heavily polluted by an industrial atmosphere.

  18. Imaging performance of crystalline and polycrystalline oxides

    NASA Astrophysics Data System (ADS)

    Duncan, Donald D.; Lange, Charles H.; Fischer, David J.

    1990-10-01

    Knowledge of the scatter characteristics of candidate infrared sensor dome materials is necessary for the evaluation of image quality and susceptibility to bright off-axis sources. For polycrystalline materials in particular, the scattering levels are high enough to warrant concern. To evaluate the effects of scatter on image quality, estimates of the window Point Spread Function (PSF), or its transform, the Optical Transfer Function (OTF) are required. Additionally, estimates of the material scatter cross-section per unit volume are essential for determining flare susceptibility. Experimental procedures and models in use at JHU/APL allow the determination of each. Measurement results are provided for samples of A1203 (ordinary ray), Y203, LaO3-doped Y203, MgAL2O4, and ALON. Applications of these results are illustrated for planar windows having arbitrary orientations with respect to the optical axis.

  19. Plastic deformation of polycrystalline zirconium carbide

    NASA Technical Reports Server (NTRS)

    Darolia, R.; Archbold, T. F.

    1976-01-01

    The compressive yield strength of arc-melted polycrystalline zirconium carbide has been found to vary from 77 kg per sq mm at 1200 C to 19 kg per sq mm at 1800 C. Yield drops were observed with plastic strain-rates greater than 0.003/sec but not with slower strain rates. Strain-rate change experiments yielded values for the strain-rate sensitivity parameter m which range from 6.5 at 1500 C to 3.8 at 1800 C, and the product dislocation velocity stress exponent times T was found to decrease linearly with increasing temperature. The deformation rate results are consistent with the Kelly-Rowcliffe model in which the diffusion of carbon assists the motion of dislocations.

  20. Interaction of metal layers with polycrystalline Si

    NASA Technical Reports Server (NTRS)

    Nakamura, K.; Olowolafe, J. O.; Lau, S. S.; Nicolet, M.-A.; Mayer, J. W.; Shima, R.

    1976-01-01

    Solid-phase reactions of metal films deposited on 0.5-micron-thick polycrystalline layers of Si grown by chemical vapor deposition at 640 C were investigated by MeV He-4 backscattering spectrometry, glancing angle X-ray diffraction, and SEM observations. For the metals Al, Ag, and Au, which form simple eutectics, heat treatment at temperatures below the eutectic results in erosion of the poly-Si layer and growth of Si crystallites in the metal film. Crystallite formation is observed at temperatures exceeding 550 C for Ag, at those exceeding 400 C for Al, and at those exceeding 200 C for Au films. For Pd, Ni, and Cr, heat treatment results in silicide formation. The same initial silicides (Pd2Si, Ni2Si, and CrSi2), are formed at similar temperatures on single-crystal substrates.

  1. On properties of boundaries and electron conductivity in mesoscopic polycrystalline silicon films for memory devices

    SciTech Connect

    Berman, G.P.; Doolen, G.D.; Mainieri, R.; Rehacek, J.; Campbell, D.K.; Luchnikov, V.A.; Nagaev, K.E.

    1998-02-01

    The authors present the results of MD modeling on the structural properties of grain boundaries (GB) in thin polycrystalline films. The transition from crystalline boundaries with low mismatch angle to amorphous boundaries is investigated. It is shown that the structures of the GBs satisfy a thermodynamical criterion suggested in a cited reference. The potential energy of silicon atoms is closely related with a geometrical quantity -- tetragonality of their coordination with their nearest neighbors. A crossover of the length of localization is observed to analyze the crossover of the length of localization of the single electron states and properties of conductance of the thin polycrystalline film at low temperature. They use a two-dimensional Anderson localization model, with the random one site electron charging energy for a single grain (dot), random non-diagonal matrix elements, and random number of connections between the neighboring grains. The results on the crossover behavior of localization length of the single electron states and characteristic properties of conductance are presented in the region of parameters where the transition from an insulator to a conductor regimes takes place.

  2. Submicrometer-wide amorphous and polycrystalline anatase TiO2 waveguides for microphotonic devices.

    PubMed

    Bradley, Jonathan D B; Evans, Christopher C; Choy, Jennifer T; Reshef, Orad; Deotare, Parag B; Parsy, François; Phillips, Katherine C; Lončar, Marko; Mazur, Eric

    2012-10-08

    We demonstrate amorphous and polycrystalline anatase TiO(2) thin films and submicrometer-wide waveguides with promising optical properties for microphotonic devices. We deposit both amorphous and polycrystalline anatase TiO(2) using reactive sputtering and define waveguides using electron-beam lithography and reactive ion etching. For the amorphous TiO(2), we obtain propagation losses of 0.12 ± 0.02 dB/mm at 633 nm and 0.04 ± 0.01 dB/mm at 1550 nm in thin films and 2.6 ± 0.5 dB/mm at 633 nm and 0.4 ± 0.2 dB/mm at 1550 nm in waveguides. Using single-mode amorphous TiO(2) waveguides, we characterize microphotonic features including microbends and optical couplers. We show transmission of 780-nm light through microbends having radii down to 2 μm and variable signal splitting in microphotonic couplers with coupling lengths of 10 μm.

  3. Advanced Micro-Polycrystalline Silicon Films Formed by Blue-Multi-Laser-Diode Annealing

    NASA Astrophysics Data System (ADS)

    Noguchi, Takashi; Chen, Yi; Miyahira, Tomoyuki; de Dieu Mugiraneza, Jean; Ogino, Yoshiaki; Iida, Yasuhiro; Sahota, Eiji; Terao, Motoyasu

    2010-03-01

    Semiconductor blue-multi-laser-diode annealing (BLDA) for amorphous Si film was performed to obtain a film containing uniform polycrystalline silicon (poly-Si) grains as a low temperature poly-Si (LTPS) process used for thin-film transistor (TFT). By adopting continuous wave (CW) mode at the 445 nm wavelength of the BLDA system, the light beam is efficiently absorbed into the thin amorphous silicon film of 50 nm thickness and can be crystallized stably. By adjusting simply the laser power below 6 W with controlled beam shape, the isotropic Si grains from uniform micro-grains to arbitral grain size of polycrystalline phase can be obtained with reproducible by fixing the scan speed at 500 mm/s. As a result of analysis using electron microscopy and atomic force microscopy (AFM), uniform distributed micro-poly-Si grains of smooth surface were observed at a power condition below 5 W and the preferred crystal orientation of (111) face was confirmed. As arbitral grain size can be obtained stably and reproducibly merely by controlling the laser power, BLDA is promising as a next-generation LTPS process for AM OLED panel including a system on glass (SoG).

  4. Polycrystalline and Intracrystalline Growth of Akimotoite in Clinoenstatite of the L-6 Tenham Chondrite

    NASA Astrophysics Data System (ADS)

    Ferroir, T.; Beck, P.; Gillet, P.; Simionovici, A.; Bohn, M.; Dubrovinsky, L.; El Goresy, A.

    2006-12-01

    Akimotoite was first reported by [1] in the Tenham chondrite as aggregates adjacent to clinoenstatite entrained in shock melt vein. We report the presence in the same chondrite of a large clinoenstatite grain partially transformed into akimotoite due to shock by two different mechanisms : (1) phase transition commencing at grain boundaries leading to polycrystalline akimotoite and (2) intracrystalline phase transition commencing from the polycrystalline akimotoite as thin lamellae extending to the grain interior. We conducted a detailed survey of these transformations by reflected light microscopy, Raman analysis and mapping, SEM, X-ray diffraction and electron microprobe analysis and mapping to better constrain phase transformation and element partitioning between the two phases. Polycrystalline aggregate consist mainly of akimotoite from which thin lamellae of akimotoite emerge. Reflected light analysis and Raman mapping allowed to unambiguously identify the two phases. Synchrotron XRD analysis allowed to refine the structure to the R-3 space group with cell parameters of a=4.71(2)Å and c=13.25(3) Å for a volume of V=254(4)Å3 thus suggesting a high residual stress of a few GPa according to initial volume and bulk moduli [2]. Microprobe analysis shows a difference in composition between polycrystalline akimotoite (Fe0.35Mg0.6Ca0.05)SiO3 and clinoenstatite but no differences between akimotoite lamellae and clinoenstatite. In contrast to [1], Ca is higher in akimotoite (CaO = 1.74 %wt) than in clinoenstatite (CaO=0.71%wt). The results support the shock origin and suggest calcium diffusion to akimotoite from the adjacent chondritic melt. Intracrystalline transformation commences from the polycrystalline akimotoite producing parallel lamellae with the same chemical composition as the host clinoenstatite. Thus, the growth of akimotoite would first involve isochemical solid state transformation followed by chemical redistribution of Ca with the melt

  5. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    SciTech Connect

    Coloma Ribera, R. Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F.

    2015-08-07

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  6. Electron diffraction from polycrystalline materials showing stress induced preferred orientation

    NASA Astrophysics Data System (ADS)

    McKenzie, D. R.; Bilek, M. M. M.

    1999-07-01

    The Gibbs free energy as generalized by J. F. Nye [Physical Properties of Crystals (Clarendon Press, Oxford, 1957), p. 179] is minimized in thermodynamic systems held at constant temperature and constant stress. This function is orientation dependent in all crystal systems in stress fields which are not purely hydrostatic. There are situations in which preferred orientation arises as a result of the synthesis of materials under impressed stress conditions such as thin film growth under ion bombardment and the pressing of powders into solids. Here, we derive the orientational constraints for cubic crystals which result from growth under a general biaxial stress field. The sign of the expression δ=s11-s12-1/2s44 determines the behavior of a cubic crystal. Electron diffraction patterns of face-centered-cubic specimens with both positive and negative values of δ are calculated using a program in MATLAB and displayed in a form suitable for direct comparison with experiment. The use of a biaxial stress with unequal principal components for producing highly oriented polycrystalline material is discussed. In the case of δ positive, as occurs in silicon, the preferred orientation is simply an alignment of the <100> directions along the principal stresses. For δ negative, as occurs in titanium nitride, the preferred orientation depends on the ratio of the principal stresses and low index directions are aligned with the principal stresses only when the principal stresses are either equal or one of them is zero. In the general case, arc-like diffraction patterns are produced. The results of a calculation of a diffraction pattern from a cross-sectional TiN film are compared with diffraction patterns reported by L. Hultman et al. [J. Appl. Phys. 78, 5395 (1995)] and show good agreement.

  7. Polycrystallinity and stacking in CVD graphene.

    PubMed

    Tsen, Adam W; Brown, Lola; Havener, Robin W; Park, Jiwoong

    2013-10-15

    Graphene, a truly two-dimensional hexagonal lattice of carbon atoms, possesses remarkable properties not seen in any other material, including ultrahigh electron mobility, high tensile strength, and uniform broadband optical absorption. While scientists initially studied its intrinsic properties with small, mechanically exfoliated graphene crystals found randomly, applying this knowledge would require growing large-area films with uniform structural and physical properties. The science of graphene has recently experienced revolutionary change, mainly due to the development of several large-scale growth methods. In particular, graphene synthesis by chemical vapor deposition (CVD) on copper is a reliable method to obtain films with mostly monolayer coverage. These films are also polycrystalline, consisting of multiple graphene crystals joined by grain boundaries. In addition, portions of these graphene films contain more than one layer, and each layer can possess a different crystal orientation and stacking order. In this Account, we review the structural and physical properties that originate from polycrystallinity and stacking in CVD graphene. To begin, we introduce dark-field transmission electron microscopy (DF-TEM), a technique which allows rapid and accurate imaging of key structural properties, including the orientation of individual domains and relative stacking configurations. Using DF-TEM, one can easily identify "lateral junctions," or grain boundaries between adjacent domains, as well as "vertical junctions" from the stacking of graphene multilayers. With this technique, we can distinguish between oriented (Bernal or rhombohedral) and misoriented (twisted) configurations. The structure of lateral junctions in CVD graphene is sensitive to growth conditions and is reflected in the material's electrical and mechanical properties. In particular, grain boundaries in graphene grown under faster reactant flow conditions have no gaps or overlaps, unlike more

  8. Polycrystalline silicon semiconducting material by nuclear transmutation doping

    DOEpatents

    Cleland, John W.; Westbrook, Russell D.; Wood, Richard F.; Young, Rosa T.

    1978-01-01

    A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

  9. Water vapor interactions with polycrystalline titanium surfaces

    NASA Astrophysics Data System (ADS)

    Azoulay, A.; Shamir, N.; Volterra, V.; Mintz, M. H.

    1999-02-01

    The initial interactions of water vapor with polycrystalline titanium surfaces were studied at room temperature. Measurements of water vapor surface accumulation were performed in a combined surface analysis system incorporating direct recoils spectrometry (DRS), Auger electron spectroscopy and X-ray photoelectron spectroscopy. The kinetics of accommodation of the water dissociation fragments (H, O and OH) displayed a complex behavior depending not only on the exposure dose but also on the exposure pressure. For a given exposure dose the efficiency of chemisorption increased with increasing exposure pressure. DRS measurements indicated the occurrence of clustered hydroxyl moieties with tilted O-H bonds formed even at very low surface coverage. A model which assumes two parallel routes of chemisorption, by direct collisions (Langmuir type) and by a precursor state is proposed to account for the observed behavior. The oxidation efficiency of water seemed to be much lower than that of oxygen. No Ti 4+ states were detected even at high water exposure values. It is likely that hydroxyl species play an important role in the reduced oxidation efficiency of water.

  10. Stability of polycrystalline Nextel 720 fiber

    SciTech Connect

    Das, G.

    1996-12-31

    The microstructure and tensile properties of polycrystalline Nextel 720 fiber (85 wt.% Al{sub 2}O{sub 3} - 15 wt-% SiO{sub 2}), both crystallized and precrystallized, were evaluated following prolonged thermal exposure at 982{degrees}C in air. The room temperature tensile strengths of Nextel 720 fibers did not appear to suffer degradation for exposures up to 3000 h and the microstructure remained unaffected by thermal exposures. The tensile strength of precrystallized Nextel 720 fiber was also determined at room temperature following heat treatments at 1093-1427{degrees}C in air. The precrystallized Nextel 720 fiber started to show a slight loss of strength after heat treatment at 1093{degrees}C/4 h and the strength deterioration was exacerbated for heat treatments at 1204{degrees}C/4 h and above. Microstructural characterization by x-ray and transmission electron microscopy (TEM) revealed the formation of mullite in heat treated precrystallized Nextel 720 fiber at 1204{degrees}C and a coarsening of microstructure above 1204{degrees}C. The degradation of strength in precrystallized Nextel 720 fiber heat treated at 1204{degrees}C/4 h and above may be attributed to phase instability and grain coarsening. Fractographs showed that fracture originated predominantly at the fiber surface.

  11. Solution-processed polycrystalline silicon on paper

    SciTech Connect

    Trifunovic, M.; Ishihara, R.; Shimoda, T.

    2015-04-20

    Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their printability, while these materials lack in the electronic performance when compared to silicon electronics. Silicon electronics, on the other hand, has only recently found their way in solution processes. Printing of cyclopentasilane as the silicon ink has been conducted and devices with far superior electric performance have been made when compared to other ink materials. A thermal annealing step of this material, however, was necessary, which prevented its usage on inexpensive substrates with a limited thermal budget. In this work, we introduce a method that allows polycrystalline silicon (poly-Si) production directly from the same liquid silicon ink using excimer laser irradiation. In this way, poly-Si could be formed directly on top of paper even with a single laser pulse. Using this method, poly-Si transistors were created at a maximum temperature of only 150 °C. This method allows silicon device formation on inexpensive, temperature sensitive substrates such as polyethylene terephthalate, polyethylene naphthalate or paper, which leads to applications that require low-cost but high-speed electronics.

  12. Solution-processed polycrystalline silicon on paper

    NASA Astrophysics Data System (ADS)

    Trifunovic, M.; Shimoda, T.; Ishihara, R.

    2015-04-01

    Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their printability, while these materials lack in the electronic performance when compared to silicon electronics. Silicon electronics, on the other hand, has only recently found their way in solution processes. Printing of cyclopentasilane as the silicon ink has been conducted and devices with far superior electric performance have been made when compared to other ink materials. A thermal annealing step of this material, however, was necessary, which prevented its usage on inexpensive substrates with a limited thermal budget. In this work, we introduce a method that allows polycrystalline silicon (poly-Si) production directly from the same liquid silicon ink using excimer laser irradiation. In this way, poly-Si could be formed directly on top of paper even with a single laser pulse. Using this method, poly-Si transistors were created at a maximum temperature of only 150 °C. This method allows silicon device formation on inexpensive, temperature sensitive substrates such as polyethylene terephthalate, polyethylene naphthalate or paper, which leads to applications that require low-cost but high-speed electronics.

  13. Abnormal hopping conduction in semiconducting polycrystalline graphene

    NASA Astrophysics Data System (ADS)

    Park, Jeongho; Mitchel, William C.; Elhamri, Said; Grazulis, Larry; Altfeder, Igor

    2013-07-01

    We report the observation of an abnormal carrier transport phenomenon in polycrystalline semiconducting graphene grown by solid carbon source molecular beam epitaxy. At the lowest temperatures in samples with small grain size, the conduction does not obey the two-dimensional Mott-type variable-range hopping (VRH) conduction often reported in semiconducting graphene. The hopping exponent p is found to deviate from the 1/3 value expected for Mott VRH with several samples exhibiting a p=2/5 dependence. We also show that the maximum energy difference between hopping sites is larger than the activation energy for nearest-neighbor hopping, violating the assumptions of the Mott model. The 2/5 dependence more closely agrees with the quasi-one-dimensional VRH model proposed by Fogler, Teber, and Shklovskii (FTS). In the FTS model, conduction occurs by tunneling between neighboring metallic wires. We suggest that metallic edge states and conductive grain boundaries play the role of the metallic wires in the FTS model.

  14. Texture and Anisotropy of Polycrystalline Piezoelectics

    SciTech Connect

    Jones,J.; Iverson, B.; Bowman, K.

    2007-01-01

    Piezoelectricity is manifested in ferroelectric ceramics by inducing a preferred volume fraction of one ferroelectric domain variant orientation at the expense of degenerate orientations. The piezoelectric effect is therefore largely controlled by the effectiveness of the electrical poling in producing a bias in ferroelectric (180{sup o}) and ferroelastic (non-180{sup o}) domain orientations. Further enhancement of the piezoelectric effect in bulk ceramics can be accomplished by inducing preferred orientation through grain-orientation processes such as hot forging or tape casting that precede the electrical-poling process. Coupled crystal orientation and domain orientation processing yields ceramics with an even greater piezoelectric response. In this paper, preferred orientations of domains and grains in polycrystalline piezoelectric ceramics generated through both domain- and grain-orientation processing are characterized through pole figures and orientation distribution functions obtained using data from a variety of diffraction techniques. The processing methods used to produce these materials and the methods used to evaluate preferred orientation and texture are described and discussed in the context of prior research. Different sample and crystal symmetries are explored across a range of commercial and laboratory-prepared materials. Some of the variables presented in this work include the effects of in situ thermal depoling and the detailed processing parameters used in tape casting of materials with preferred crystallite orientations. Preferred orientation is also correlated with anisotropic properties, demonstrating a clear influence of both grain and domain orientations on piezoelectricity.

  15. Interface cavitation damage in polycrystalline copper

    SciTech Connect

    Field, D.P.; Adams, B.L. . Dept. of Mechanical Engineering)

    1992-06-01

    In this paper determination of an interface damage function (IDF), from a stereological procedure similar to that presented by Hillard is described. The mathematical and experimental simplicity of the method is utilized in measuring an IDF for polycrystalline copper crept at 0.6T{sub m} under uniaxial tension. Whereas previous work focussed on a five parameter description of the local state of a grain boundary, the domain of the IDF is increased to eight degrees of freedom in the present study to include the complete geometrical description of grain boundary structure. The resulting functions identify certain types of grain boundaries which were preferentially damaged. Most of the damage occurred on interfaces oriented nearly normal to the principal stress axis. Some relatively small angle boundaries demonstrated a surprising propensity to cavitate as did certain special boundaries distinguished by a group multiplicity in misorientation space greater than one. A sequence of two dimensional projections through the eight-dimensional domain of the IDF is shown to identify a number of interface structures which are readily damaged.

  16. Polishing of dental porcelain by polycrystalline diamond.

    PubMed

    Nakamura, Yoshiharu; Sato, Hideaki; Ohtsuka, Masaki; Hojo, Satoru

    2010-01-01

    Polycrystalline diamond (PCD) exhibits excellent abrasive characteristics and is commonly used as loose grains for precision machining of hard ceramics and other materials that are difficult to grind and polish. In the present study, we investigated using bonded PCD for polishing dental porcelain, for which a lustrous surface is difficult to obtain by polishing. We compared the surface texture and characteristics of dental porcelain after polishing with bonded PCD with that obtained using bonded monocrystalline diamond (MCD), which is commonly used for this purpose. Polishing was performed at various pressures and rotational speeds on a custom-built polishing apparatus using bonded PCD or MCD with grain sizes of 3.92 μm on specimens consisting of VITA Omega 900 dentin porcelain after firing and then glazing to a specified surface roughness. The surface roughness of the polished porcelain and the abrasion quantity in terms of its polishing depth were measured, and its surface texture and characteristics were investigated. At low polishing pressures, PCD yielded a finer polished surface than MCD. The polishing depth after polishing for 20-30 min was approximately 2-3 μm with PCD and 1-2 μm with MCD. The polished surface was more uniform and smooth with PCD than with MCD.

  17. Colloidal polycrystalline monolayers under oscillatory shear

    NASA Astrophysics Data System (ADS)

    Buttinoni, Ivo; Steinacher, Mathias; Spanke, Hendrik Th.; Pokki, Juho; Bahmann, Severin; Nelson, Bradley; Foffi, Giuseppe; Isa, Lucio

    2017-01-01

    In this paper we probe the structural response to oscillatory shear deformations of polycrystalline monolayers of soft repulsive colloids with varying area fraction over a broad range of frequencies and amplitudes. The particles are confined at a fluid interface, sheared using a magnetic microdisk, and imaged through optical microscopy. The structural and mechanical response of soft materials is highly dependent on their microstructure. If crystals are well understood and deform through the creation and mobilization of specific defects, the situation is much more complex for disordered jammed materials, where identifying structural motifs defining plastically rearranging regions remains an elusive task. Our materials fall between these two classes and allow the identification of clear pathways for structural evolution. In particular, we demonstrate that large enough strains are able to fluidize the system, identifying critical strains that fulfill a local Lindemann criterion. Conversely, smaller strains lead to localized and erratic irreversible particle rearrangements due to the motion of structural defects. In this regime, oscillatory shear promotes defect annealing and leads to the growth of large crystalline domains. Numerical simulations help identify the population of rearranging particles with those exhibiting the largest deviatoric stresses and indicate that structural evolution proceeds towards the minimization of the stress stored in the system. The particles showing high deviatoric stresses are localized around grain boundaries and defects, providing a simple criterion to spot regions likely to rearrange plastically under oscillatory shear.

  18. Conduction mechanisms in undoped polycrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Chou, Hsueh-Tao; Lee, Chia-Chang; Sun, Chia-Hsin

    2000-07-01

    The unadopted polycrystalline diamond films are deposited on p-type silicon substrates by a microwave plasma chemical vapor deposition (MPCVD) system. The deposition conditions are CH4?/H(subscript 2=0.5%, pressure equals 45 torr, power equals 2.2kW, and subtract temperature equals 885 degree(s)C. SEM was used to inspect the surface morphology, Raman Spectroscopy to determine the quality, and XPS to analyze the chemical composition. It in concluded that a cleaning procedure on diamond surfaces can eliminate the carbon phase but enhance the oxygenation on the films. The electrical characteristics were investigated by current-voltage-temperature measurements in a metal-insulator-semiconductor (MIS) structure with top metal contacts and back silicon substrates contacts. It can be found a transition electric field of 240 kV/cm, where Schottky emission (SE) mechanism is responsible for electric conduction below 240kV/cm, and Poole-Frenkel transport (PF) mechanism dominates beyond 240 kV/cm. By the extrapolations, the Schottky barrier height of silver and diamond film is 2.4 eV, and the tarp depth is 4.75 eV in the diamond film.

  19. Geometric considerations for diffusion in polycrystalline solids

    NASA Astrophysics Data System (ADS)

    Chen, Ying; Schuh, Christopher A.

    2007-03-01

    Mass transport in polycrystals is usually enhanced by short-circuit diffusion along various defect paths, e.g., grain boundaries, dislocation cores, and triple junctions. In the "kinetic-A" regime, diffusion fields associated with the various diffusion paths overlap each other, forming a macroscopically homogeneous diffusion profile that can be described by an effective diffusion coefficient. Here, we develop a composite diffusion model for polycrystals based on realistic arrangements between various microstructural elements, which usually exhibit complex network morphologies. Asymmetric effective medium equations and power-law scaling relationships are used to evaluate the effective diffusivity of a general isotropic polycrystal, and are compared to predictions of the simple arithmetic rule of mixtures used frequently in the literature. We also examine the grain size and temperature dependence of polycrystalline diffusion in terms of the apparent grain size exponent and activation energy, which in turn provide the basis by which we assess dominant diffusion processes and construct generalized diffusion mechanism maps. Implications of geometry on experimental diffusivity measurements are also discussed.

  20. Thermophotovoltaic Cells on Zinc Diffused Polycrystalline GaSb

    SciTech Connect

    Sulima, O.V.; Bett, A.W.; Dutta, P.S.; Ehsani, H.; Gutmann, R.J.

    2000-05-01

    For the first time, it has been demonstrated that thermophotovoltaic cells made of polycrystalline GaSb with small grain sizes (down to 100 x 100 {micro}m) have similar characteristics to the best Zinc diffused single crystal GaSb cells with identified device parameters. The grain boundaries in polycrystalline GaSb do not degrade TPV cell parameters, indicating that such material can be used for high-efficiency thermophotovoltaic cells.

  1. Modelling of infrared optical constants for polycrystalline low pressure chemical vapour deposition ZnO:B films

    NASA Astrophysics Data System (ADS)

    Prunici, P.; Hamelmann, F. U.; Beyer, W.; Kurz, H.; Stiebig, H.

    2013-03-01

    Doped zinc oxide films are of high interest in thin film solar cell technology for application as transparent conducting oxide. Rapid and detailed characterisation of ZnO thin film properties is required for quality control and optimisation of the deposited films. In the present work, a new model of dielectric functions based on the effective medium approximation (EMA) is developed and is applied for characterisation of polycrystalline boron doped zinc oxide (ZnO:B) films, deposited by low pressure chemical vapour deposition (LPCVD) technique onto glass substrates. The model takes into account that polycrystalline ZnO is considered to consist of crystal grains surrounded by depletion layers. Using this model and Fourier Transform Infrared Spectroscopy (FTIR) performed in reflection configuration over a wide mid-infrared spectral region (from 2 μm up to 25 μm), the properties of depletion layer and the bulk of the grains in ZnO can be rapidly characterised in detail, and the volume fraction of the depletion layer can be extracted. The results are in good agreement with previously presented theories of electron transport in polycrystalline materials. Using electrical measurements like conductivity and Hall techniques in addition to the optically determined parameters, predominant electron scattering mechanisms in polycrystalline films for different doping levels are identified. The measurements show the impact of the doping level on depletion layer of the crystallites. It is shown, furthermore, that under a water vapour rich environment the volume fraction of the depletion layer may increase up to 5 times and more, while the mobility of the charge carriers in the depletion layer drops drastically from about 31 cm2V-1s-1 to about 8 cm2V-1s-1. This indicates that water vapour exposure causes an increase of the potential barrier in the grain boundary depletion layer, limiting the electron transport across the grain boundaries to a classical thermionic emission

  2. Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals

    DOEpatents

    Albright, Scot P.; Chamberlin, Rhodes R.

    1996-03-26

    A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.

  3. Effect of vorticity on polycrystalline ice deformation

    NASA Astrophysics Data System (ADS)

    Llorens, Maria-Gema; Griera, Albert; Steinbach, Florian; Bons, Paul D.; Gomez-Rivas, Enrique; Jansen, Daniela; Lebensohn, Ricardo A.; Weikusat, Ilka

    2017-04-01

    Understanding ice sheet dynamics requires a good knowledge of how dynamic recrystallisation controls ice microstructures and rheology at different boundary conditions. In polar ice sheets, pure shear flattening typically occurs at the top of the sheets, while simple shearing dominates near their base. We present a series of two-dimensional microdynamic numerical simulations that couple ice deformation with dynamic recrystallisation of various intensities, paying special attention to the effect of boundary conditions. The viscoplastic full-field numerical modelling approach (VPFFT) (Lebensohn, 2001) is used to calculate the response of a polycrystalline aggregate that deforms purely by dislocation glide. This code is coupled with the ELLE microstructural modelling platform that includes recrystallisation in the aggregate by intracrystalline recovery, nucleation by polygonisation, as well as grain boundary migration driven by the reduction of surface and strain energies (Llorens et al., 2016a, 2016b, 2017). The results reveal that regardless the amount of DRX and ice flow a single c-axes maximum develops all simulations. This maximum is oriented approximately parallel to the maximum finite shortening direction and rotates in simple shear towards the normal to the shear plane. This leads to a distinctly different behaviour in pure and simple shear. In pure shear, the lattice preferred orientation (LPO) and shape-preferred orientation (SPO) are increasingly unfavourable for deformation, leading to hardening and an increased activity of non-basal slip. The opposite happens in simple shear, where the imposed vorticity causes rotation of the LPO and SPO to a favourable orientation, leading to strain softening. An increase of recrystallisation enhances the activity of the non-basal slip, due to the reduction of deformation localisation. In pure shear conditions, the pyramidal slip activity is thus even more enhanced and can become higher than the basal-slip activity. Our

  4. Defect behavior of polycrystalline solar cell silicon

    SciTech Connect

    Schroder, D.K.; Park, S.H.; Hwang, I.G.; Mohr, J.B.; Hanly, M.P.

    1993-05-01

    The major objective of this study, conducted from October 1988 to September 1991, was to gain an understanding of the behavior of impurities in polycrystalline silicon and the influence of these impurities on solar cell efficiency. The authors studied edge-defined film-fed growth (EFG) and cast poly-Si materials and solar cells. With EFG Si they concentrated on chromium-doped materials and cells to determine the role of Cr on solar cell performance. Cast poly-Si samples were not deliberately contaminated. Samples were characterized by cell efficiency, current-voltage, deep-level transient spectroscopy (DLTS), surface photovoltage (SPV), open-circuit voltage decay, secondary ion mass spectrometry, and Fourier transform infrared spectroscopy measurements. They find that Cr forms Cr-B pairs with boron at room temperature and these pairs dissociate into Cr{sub i}{sup +} and B{sup {minus}} during anneals at 210{degrees}C for 10 min. Following the anneal, Cr-B pairs reform at room temperature with a time constant of 230 h. Chromium forms CrSi{sub 2} precipitates in heavily contaminated regions and they find evidence of CrSi{sub 2} gettering, but a lack of chromium segregation or precipitation to grain boundaries and dislocations. Cr-B pairs have well defined DLTS peaks. However, DLTS spectra of other defects are not well defined, giving broad peaks indicative of defects with a range of energy levels in the band gap. In some high-stress, low-efficiency cast poly-Si they detect SiC precipitates, but not in low-stress, high-efficiency samples. SPV measurements result in nonlinear SPV curves in some materials that are likely due to varying optical absorption coefficients due to locally varying stress in the material.

  5. A New Polycrystalline Co-Ni Superalloy

    NASA Astrophysics Data System (ADS)

    Knop, M.; Mulvey, P.; Ismail, F.; Radecka, A.; Rahman, K. M.; Lindley, T. C.; Shollock, B. A.; Hardy, M. C.; Moody, M. P.; Martin, T. L.; Bagot, P. A. J.; Dye, D.

    2014-12-01

    In 2006, a new-ordered L12 phase, Co3(Al,W), was discovered that can form coherently in a face-centered cubic (fcc) A1 Co matrix. Since then, a community has developed that is attempting to take these alloys forward into practical applications in gas turbines. A new candidate polycrystalline Co-Ni γ/ γ' superalloy, V208C, is presented that has the nominal composition 36Co-35Ni-15Cr-10Al-3W-1Ta (at.%). The alloy was produced by conventional powder metallurgy superalloy methods. After forging, a γ' fraction of ~56% and a secondary γ' size of 88 nm were obtained, with a grain size of 2.5 μm. The solvus temperature was 1000°C. The density was found to be 8.52 g cm-3, which is similar to existing Ni alloys with this level of γ'. The alloy showed the flow stress anomaly and a yield strength of 920 MPa at room temperature and 820 MPa at 800°C, similar to that of Mar-M247. These values are significantly higher than those found for either conventional solution and carbide-strengthened Co alloys or the γ/ γ' Co superalloys presented in the literature thus far. The oxidation resistance, with a mass gain of 0.08 mg cm-2 in 100 h at 800°C, is also comparable with that of existing high-temperature Ni superalloys. These results suggest that Co-based and Co-Ni superalloys may hold some promise for the future in gas turbine applications.

  6. Nonlinear alternating current conduction in polycrystalline manganites

    SciTech Connect

    Ghosh, T. N.; Nandi, U. N.; Jana, D.; Dey, K.; Giri, S.

    2014-06-28

    The real part of ac conductance Σ(T, f) of yttrium-doped mixed-valent polycrystalline manganite systems La{sub 1−x−y}Y{sub y}Ca{sub x}MnO{sub 3} with x = 0.33 and 0.05 and y = 0.07 and iron doped LaMn{sub 1−x}Fe{sub x}O{sub 3} with x = 0.15 is measured as a function of frequency f by varying zero-frequency Ohmic conductance Σ{sub 0} by T. The former shows a metal-insulator transition, whereas the latter exhibits insulating character throughout the measured temperature range. At a fixed temperature T, Σ(T, f) remains almost constant to the value Σ{sub 0} up to a certain frequency, known as the onset frequency f{sub c} and increases from Σ{sub 0} as frequency is increased from f{sub c}. Scaled appropriately, the data for Σ(T, f) at different T fall on the same universal curve, indicating the existence of a general scaling formalism for the ac conductance. f{sub c} scales with Σ{sub 0} as f{sub c}∼Σ{sub 0}{sup x{sub f}}, where x{sub f} is the nonlinearity exponent characterising the onset. With the help of data for ac conduction, it is shown that x{sub f} is very much phase sensitive and can be used to characterize the different phases in a manganite system originated due to change in temperature or disorder. Scaling theories and existing theoretical models are used to analyze the results of ac conduction and the nonlinearity exponent x{sub f}.

  7. Long Carrier Lifetimes in Large-Grain Polycrystalline CdTe Without CdCl2

    SciTech Connect

    Jensen, Soren A.; Burst, James M.; Duenow, Joel N.; Guthrey, Harvey L.; Moseley, John; Moutinho, Helio R.; Johnston, Steve W.; Kanevce, Ana; Al-Jassim, Mowafak M.; Metzger, Wyatt K.

    2016-06-27

    For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as silicon and perovskites have produced devices with grains ranging from less than a micron to more than 1 mm. Because the lifetimes in as-deposited polycrystalline CdTe films are typically limited to less than a few hundred picoseconds, a CdCl2 treatment is generally used to improve the lifetime; but this treatment may limit the achievable hole density by compensation. Here, we establish methods to produce CdTe films with grain sizes ranging from hundreds of nanometers to several hundred microns by close-spaced sublimation at industrial manufacturing growth rates. Two-photon excitation photoluminescence spectroscopy shows a positive correlation of lifetime with grain size. Large-grain, as-deposited CdTe exhibits lifetimes exceeding 10 ns without Cl, S, O, or Cu. This uncompensated material allows dopants such as P to achieve a hole density of 1016 cm-3, which is an order of magnitude higher than standard CdCl2-treated devices, without compromising the lifetime.

  8. Orientation-field models for polycrystalline solidification: Grain coarsening and complex growth forms

    NASA Astrophysics Data System (ADS)

    Korbuly, Bálint; Pusztai, Tamás; Tóth, Gyula I.; Henry, Hervé; Plapp, Mathis; Gránásy, László

    2017-01-01

    We compare two versions of the phase-field theory for polycrystalline solidification, both relying on the concept of orientation fields: one by Kobayashi et al. [Physica D 140 (2000) 141] [15] and the other by Henry et al. [Phys. Rev. B 86 (2012) 054117] [22]. Setting the model parameters so that the grain boundary energies and the time scale of grain growth are comparable in the two models, we first study the grain coarsening process including the limiting grain size distribution, and compare the results to those from experiments on thin films, to the models of Hillert, and Mullins, and to predictions by multiphase-field theories. Next, following earlier work by Gránásy et al. [Phys. Rev. Lett. 88 (2002) 206105; Phys. Rev. E 72 (2005) 011605] [17,21], we extend the orientation field to the liquid state, where the orientation field is made to fluctuate in time and space, and employ the model for describing of multi-dendritic solidification, and polycrystalline growth, including the formation of "dizzy" dendrites disordered via the interaction with foreign particles.

  9. Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl2

    NASA Astrophysics Data System (ADS)

    Jensen, S. A.; Burst, J. M.; Duenow, J. N.; Guthrey, H. L.; Moseley, J.; Moutinho, H. R.; Johnston, S. W.; Kanevce, A.; Al-Jassim, M. M.; Metzger, W. K.

    2016-06-01

    For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as silicon and perovskites have produced devices with grains ranging from less than a micron to more than 1 mm. Because the lifetimes in as-deposited polycrystalline CdTe films are typically limited to less than a few hundred picoseconds, a CdCl2 treatment is generally used to improve the lifetime; but this treatment may limit the achievable hole density by compensation. Here, we establish methods to produce CdTe films with grain sizes ranging from hundreds of nanometers to several hundred microns by close-spaced sublimation at industrial manufacturing growth rates. Two-photon excitation photoluminescence spectroscopy shows a positive correlation of lifetime with grain size. Large-grain, as-deposited CdTe exhibits lifetimes exceeding 10 ns without Cl, S, O, or Cu. This uncompensated material allows dopants such as P to achieve a hole density of 1016 cm-3, which is an order of magnitude higher than standard CdCl2-treated devices, without compromising the lifetime.

  10. Fabrication and Characterization of 150-mm Silicon-on-Polycrystalline Silicon Carbide Substrates

    NASA Astrophysics Data System (ADS)

    Lotfi, S.; Li, L.-G.; Vallin, Ö.; Norström, H.; Olsson, J.

    2012-03-01

    Silicon-on-insulator (SOI) substrates can reduce radiofrequency (RF) substrate losses due to their buried oxide (BOX). On the other hand, the BOX causes problems since it acts as a thermal barrier. Oxide has low thermal conductivity and traps heat generated by devices on the SOI. This paper presents a hybrid substrate which uses a thin layer of polycrystalline silicon and polycrystalline silicon carbide (Si-on-poly-SiC) to replace the thermally unfavorable BOX and the silicon substrate. Substrates of 150 mm were fabricated by wafer bonding and shown to be stress and strain free. Various electronic devices and test structures were processed on the hybrid substrate as well as on a low-resistivity SOI reference wafer. The substrates were characterized electrically and thermally and compared with each other. Results showed that the Si-on-poly-SiC wafer had 2.5 times lower thermal resistance and exhibited equal or better electrical performance compared with the SOI reference wafer.

  11. Grain boundary dominated ion migration in polycrystalline organic–inorganic halide perovskite films

    DOE PAGES

    Shao, Yuchuan; Fang, Yanjun; Li, Tao; ...

    2016-03-21

    The efficiency of perovskite solar cells is approaching that of single-crystalline silicon solar cells despite the presence of large grain boundary (GB) area in the polycrystalline thin films. Here, by using a combination of nanoscopic and macroscopic level measurements, we show that the ion migration in polycrystalline perovskites is dominated through GBs. Conducting atomic force microscopy measurements reveal much stronger hysteresis both for photocurrent and dark-current at the GBs than on the grains interiors, which can be explained by faster ion migration at the GBs. The dramatically enhanced ion migration results in a redistribution of ions along the GBs aftermore » electric poling, in contrast to the intact grain area. The perovskite single-crystal devices without GBs show negligible current hysteresis and no ion-migration signal. Furthermore, the discovery of dominating ion migration through GBs in perovskites can lead to broad applications in many types of devices including photovoltaics, memristors, and ion batteries.« less

  12. Thin EFG octagons

    NASA Astrophysics Data System (ADS)

    Kalejs, J. P.

    1994-03-01

    This report describes work to advance the manufacturing line capabilities in crystal growth and laser cutting of Mobil Solar's unique edge-defined film-fed growth (EFG) octagon technology and to reduce the manufacturing costs of 10 cm x 10 cm polycrystalline silicon EFG wafers. The report summarizes the significant technical improvements in EFG technology achieved in the first 6 months of the PVMaT Phase 2 and the success in meeting program milestones. Technical results are reported for each of the three main pregrain areas: Task 5 -- Thin octagon growth (crystal growth) to reduce the thickness of the octagon to 200 microns; Task 6 -- Laser cutting-to improve the laser cutting process so as to produce wafers with decreased laser cutting damage at increased wafer throughput rates; and Task 7 -- Process control and product specification to implement advanced strategies in crystal growth process control and productivity designed to increase wafer yields.

  13. Direct observation of Barkhausen avalanche in Co thin films.

    PubMed

    Kim, Dong-Hyun; Choe, Sug-Bong; Shin, Sung-Chul

    2003-02-28

    We report direct full-field magneto-optical observations of Barkhausen avalanches in Co polycrystalline thin films at criticality. We provide experimental evidence for the validity of a phenomenological model of the Barkhausen avalanche originally proposed by Cizeau, Zapperi, Durin, and Stanley [Phys. Rev. Lett. 79, 4669 (1997)

  14. Thin film processing of photorefractive BaTiO3

    NASA Technical Reports Server (NTRS)

    Schuster, Paul R.; Potember, Richard S.

    1991-01-01

    The principle objectives of this ongoing research involve the preparation and characterization of polycrystalline single-domain thin films of BaTiO3 for photorefractive applications. These films must be continuous, free of cracks, and of high optical quality. The two methods proposed are sputtering and sol-gel related processing.

  15. Amorphous and Polycrystalline Photoconductors for Direct Conversion Flat Panel X-Ray Image Sensors

    PubMed Central

    Kasap, Safa; Frey, Joel B.; Belev, George; Tousignant, Olivier; Mani, Habib; Greenspan, Jonathan; Laperriere, Luc; Bubon, Oleksandr; Reznik, Alla; DeCrescenzo, Giovanni; Karim, Karim S.; Rowlands, John A.

    2011-01-01

    In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs). We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se) has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE). Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF) and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI2 and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the HARP has been

  16. Amorphous and polycrystalline photoconductors for direct conversion flat panel x-ray image sensors.

    PubMed

    Kasap, Safa; Frey, Joel B; Belev, George; Tousignant, Olivier; Mani, Habib; Greenspan, Jonathan; Laperriere, Luc; Bubon, Oleksandr; Reznik, Alla; DeCrescenzo, Giovanni; Karim, Karim S; Rowlands, John A

    2011-01-01

    In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs). We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se) has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE). Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF) and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI(2) and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the HARP has been

  17. Recent technological advances in thin film solar cells

    SciTech Connect

    Ullal, H.S.; Zwelbel, K.; Surek, T.

    1990-03-01

    High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

  18. Polycrystalline Garnet Porphyroblasts, an EBSD Study

    NASA Astrophysics Data System (ADS)

    Seaton, N. C.; Whitney, D. L.; Anderson, C.; Alpert, A.

    2008-12-01

    Polycrystalline garnet porphyroblasts (PGP's) are significant because their formation provides information about metamorphic crystalline mechanisms, in particular during early stages of crystal growth, which may differ from those governing later stages; and because their existence may affect the chemical and structural evolution of metamorphic rocks. For example, the extent of element exchange between the garnet interior and the matrix may be affected by the presence of grain boundaries within PGP's. There have been several previous studies of PGP's but important questions about them remain; e.g. whether early coalescence is a common method by which garnets crystallize, whether grains rotate during growth to attain an energetically favorable grain-grain contact, and whether deformation and/or precursor minerals or other chemical or mechanical heterogeneities influence the formation of PGP's. PGP's have been detected by us in several different localities including; micaschist from SE Vermont (USA), including locality S35j of Rosenfeld (1968); the Solitude Range (British Columbia, Canada); the Southern Menderes Massif (Turkey); and three zones (garnet, staurolite, kyanite) from the Dutchess County Barrovian sequence in NY (USA). We have identified two types of PGP: cryptic and morphologically distinct. Cryptic PGP have no obvious morphological expression of the high angle boundaries within them and appear to be a single crystal. Morphologically distinct PGP have an obvious depression in the outer grain boundary where it is intersected by the internal grain boundary. Most PGP's contain inclusion trails and the high angle grain boundaries crosscut the trend of these as well as the inclusions themselves. PGP also show major element growth zoning that is not influenced by the internal grain boundaries except in rare cases. PGP's comprise ~ 5-35% of the garnet populations analyzed. More than 95% of the PGP's we have analyzed are comprised of 2-3 domains; the rest contain

  19. High-resolution mapping of nonuniform carrier transport at contacts to polycrystalline CdTe/CdS solar cells

    NASA Astrophysics Data System (ADS)

    Sutter, P.; Sutter, E.; Ohno, T. R.

    2004-03-01

    We demonstrate a spectroscopic technique based on scanning tunneling microscopy that provides high-resolution maps of local carrier transport across contacts to polycrystalline thin-film solar cells. Using this technique, preferential transport channels across a p+-ZnTe/p-CdTe back contact of a p-CdTe/n-CdS solar cell are imaged with 20 nm spatial resolution. Transport across this contact is highly nonuniform. Large areas of high resistance coexist with nanoscale low-resistance regions that are strongly correlated with grain boundaries in the CdTe absorber. These results suggest an important role of grain boundaries as near-contact conducting channels.

  20. Orientational tomography of optical axes directions distributions of multilayer biological tissues birefringent polycrystalline networks

    NASA Astrophysics Data System (ADS)

    Zabolotna, Natalia I.; Dovhaliuk, Rostyslav Y.

    2013-09-01

    We present a novel measurement method of optic axes orientation distribution which uses a relatively simple measurement setup. The principal difference of our method from other well-known methods lies in direct approach for measuring the orientation of optical axis of polycrystalline networks biological crystals. Our test polarimetry setup consists of HeNe laser, quarter wave plate, two linear polarizers and a CCD camera. We also propose a methodology for processing of measured optic axes orientation distribution which consists of evaluation of statistical, correlational and spectral moments. Such processing of obtained data can be used to classify particular tissue sample as "healthy" or "pathological". For our experiment we use thin layers of histological section of normal and muscular dystrophy tissue sections. It is shown that the difference between mentioned moments` values of normal and pathological samples can be quite noticeable with relative difference up to 6.26.

  1. Growth of polycrystalline silicon films on glass by high-temperature chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Bergmann, R. B.; Brendel, R.; Wolf, M.; Lölgen, P.; Krinke, J.; Strunk, H. P.; Werner, J. H.

    1997-02-01

    Covering glass substrates with polycrystalline Si films for electronic devices such as solar cells still presents a great challenge. In a two-step process, we first coat a novel high-temperature resistant glass substrate with a thin film of amorphous Si, which is then solid-phase crystallized at 0268-1242/12/2/012/img9. In the second step, atmospheric pressure chemical vapour deposition at 0268-1242/12/2/012/img10 serves to deposit a several micron thick light-absorbing film. The minority carrier diffusion length in our films correlates with the area weighted grain size determined by transmission electron microscopy. We obtain a hole mobility of 0268-1242/12/2/012/img11 after hydrogen passivation and an electron diffusion length of 0268-1242/12/2/012/img12.

  2. Role of polycrystallinity in CdTe and CuInSe sub 2 photovoltaic cells

    SciTech Connect

    Sites, J.R. )

    1991-01-01

    The polycrystalline nature of thin-film CdTe and CuInSe{sub 2} solar cells continues to be a major factor in several individual losses that limit overall cell efficiency. This report describes progress in the quantitative separation of these losses, including both measurement and analysis procedures. It also applies these techniques to several individual cells to help document the overall progress with CdTe and CuInSe{sub 2} cells. Notably, CdTe cells from Photon Energy have reduced window photocurrent losses to 1 mA/Cm{sup 2}; those from the University of South Florida have achieved a maximum power voltage of 693 mV; and CuInSe{sub 2} cells from International Solar Electric Technology have shown a hole density as high as 7 {times} 10{sup 16} cm{sup {minus}3}, implying a significant reduction in compensation. 9 refs.

  3. Role of polycrystallinity in CdTe and CuInSe2 photovoltaic cells

    NASA Astrophysics Data System (ADS)

    Sites, J. R.

    The polycrystalline nature of thin-film CdTe and CuInSe2 solar cells continues to be a major factor in several individual losses that limit overall cell efficiency. This report describes progress in the quantitative separation of these losses, including both measurement and analysis procedures. It also applies these techniques to several individual cells to help document the overall progress with CdTe and CuInSe2 cells. Notably, CdTe cells from Photon Energy have reduced window photocurrent losses to 1 mA/Cm(exp 2); those from the University of South Florida have achieved a maximum power voltage of 693 mV; and CuInSe2 cells from International Solar Electric Technology have shown a hole density as high as 7 x 10(exp 16) cm(exp -3), implying a significant reduction in compensation.

  4. Low temperature growth of high quality CdTe polycrystalline layers

    NASA Astrophysics Data System (ADS)

    Ribeiro, I. R. B.; Suela, J.; Oliveira, J. E.; Ferreira, S. O.; Motisuke, P.

    2007-08-01

    We have investigated the growth of CdTe thin films on glass substrates by hot wall epitaxy. The layers have been characterized by scanning electron microscopy, atomic force microscopy, profilometry, x-ray diffraction and optical transmission. The grown samples are polycrystalline with a high preferential [1 1 1] orientation. Atomic force microscopy and scanning electron microscopy reveal pyramidal grain shapes with a size of around 0.3 µm. The surface roughness increases with sample thickness and growth temperature, reaching about 200 nm for 10 µm thick layers grown at 300 °C. Samples with a thickness of 2 µm grown at 150 °C showed a roughness of less than 40 nm. Optical transmission measurements demonstrate layers with high optical quality.

  5. Growth, microstructure, optical and electrical properties of sprayed CuInSe{sub 2} polycrystalline films

    SciTech Connect

    Akl, Alaa A.; Afify, H.H.

    2008-06-03

    Polycrystalline thin films of CuInSe{sub 2} have been prepared by chemical spray pyrolysis technique as a function of Cu/In ratio. Incremental growth of the various ratios followed at different substrate temperatures ranging from 548 to 623 K. Characterizations by means of compositional analysis, X-ray diffraction and spectrophotometry measurements have been carried out. Voigt profile method has been used to determine the microstructure parameter (crystallite/domain size and macrostrain). The effect of Cu/In ratio as well as substrate temperature on the optical features (absorption coefficient and band gap) of these films has been investigated. The films of different Cu/In ratios (0.9-1.1) displayed a band gap from 0.92 to 1.025 eV for direct transition. The dark resistivity measurements at room temperature of Cu-rich samples show about five orders of magnitude higher than that of In-rich samples.

  6. Plastic behavior of polycrystalline copper at optical scales of deformation

    NASA Astrophysics Data System (ADS)

    Domber, Jeanette Leah

    Microplasticity is permanent deformation that occurs below the proportional limit of a material. For precision deployable optical spacecraft, it is unknown how microplasticity will affect the performance of the precision structure. An examination of the rolling of thin film optical reflectors indicates a strong dependence of the post-deployed shape on the strain hardening exponent of the material. However, confirmation of the valid extension of the constitutive model used to predict the deployed shape to microscopic strain regimes is necessary. The primary objective of this thesis is threefold: determine the relationship between stress and strain at nano to microstrain levels for representative materials; determine if the relationship between microscopic and macroscopic plastic behavior can be accurately characterized by the Ramberg-Osgood strain hardening constitutive model with a single set of material parameters; and determine if dislocation motion is the root cause of microplastic behavior at room temperature. The test apparatus, with a dynamic force range of 40,000 to 1, measures strains from 0.01 to 1000 parts per million (ppm) of cylindrical amorphous quartz and cold-worked and annealed tempered polycrystalline copper specimen. Elastic behavior in all three materials was consistent with typical values. However, plastic responses were larger than expected. Stresses on the order of 10 to 10,000 kPa (1.45 to 1450 psi) produced permanent strain in all three types of materials ranging from 0.01 to 1 ppm, some of which was attributable to a systematic error in the measurement. Extrapolating macroplastic behavior to lower stress and strain values underestimates the amount of microplasticity observed in the material. Therefore, material property characterization is required at all strain levels that are of concern for a particular application. The similarity in the levels of measured permanent strain for a given stress level between the as-drawn and annealed copper

  7. Sintering polycrystalline olivine and polycrystalline clinopyroxene containing trace amount of graphite from natural crystals

    NASA Astrophysics Data System (ADS)

    Tsubokawa, Yumiko; Ishikawa, Masahiro

    2017-09-01

    Graphite-bearing polycrystalline olivine and polycrystalline clinopyroxene with submicron to micron grain size were successfully sintered from a single crystal of naturally occurring olivine (Fo88-92Fa12-8: Mg1.76-1.84Fe0.16-0.24SiO4) and a single crystal of naturally occurring clinopyroxene (Di99Hed1: Ca0.92Na0.07Mn0.01Mg0.93Fe0.01Al0.06Si2O6). The milled powders of both these crystals were sintered under argon gas flow at temperatures ranging from 1130 to 1350 °C for 2 h. As the sintering temperature increased, the average grain size of olivine increased from 0.2 to 1.4 µm and that of clinopyroxene increased from 0.1 to 2.4 µm. The porosity of sintered samples remained at an almost-constant volume of 2-5% for olivine and 3-4% for clinopyroxene. The samples sintered from powders milled with ethanol exhibited trace amount of graphite, identified via Raman spectroscopy analysis. As the sintering temperature increased, the intensity of the graphite Raman peak decreased, compared with both olivine and clinopyroxene peaks. The carbon content of the sintered samples was estimated to be a few hundred ppm. The in-plane size ( L a ) of graphite in the sintered olivine was estimated to be <15 nm. Our experiments demonstrate new possibilities for preparing graphite-bearing silicate-mantle mineral rocks, and this method might be useful in understanding the influence of the physical properties of graphite on grain-size-sensitive rheology or the seismic velocity of the Earth's mantle.[Figure not available: see fulltext.

  8. Studies on polycrystalline cadmium sulphide photoanodes

    NASA Astrophysics Data System (ADS)

    Ramprakash, Y.; Subramanian, V.; Krishnakumar, R.; Lakshmanan, A. S.; Venkatesan, V. K.

    The spectral dependence of absolute quantum efficiency for chemically deposited cadmium sulphide thin-film electrodes in 1 M NaOH: 0.1 M Na 2S:0.1 M S, is reported. A peak quantum efficiency of 1.75 × 10 -2 is observed at λ = 560 nm. The diffusion length of minority carriers has been calculated from Gartner's photocurrent equation. The light intensity dependence of the short-circuit current ( Jsc) was linear, whereas the open-circuit voltage ( Voc) showed a [log IL] 2 variation. Reasons for observed low values of Voc and Jsc are discussed.

  9. Real-time X-ray Diffraction Measurements of Shocked Polycrystalline Tin and Aluminum

    SciTech Connect

    Dane V. Morgan, Don Macy, Gerald Stevens

    2008-11-22

    A new, fast, single-pulse x-ray diffraction (XRD) diagnostic for determining phase transitions in shocked polycrystalline materials has been developed. The diagnostic consists of a 37-stage Marx bank high-voltage pulse generator coupled to a needle-and-washer electron beam diode via coaxial cable, producing line and bremsstrahlung x-ray emission in a 35-ns pulse. The characteristic Kα lines from the selected anodes of silver and molybdenum are used to produce the diffraction patterns, with thin foil filters employed to remove the characteristic Kβ line emission. The x-ray beam passes through a pinhole collimator and is incident on the sample with an approximately 3-mm by 6-mm spot and 1° full-width-half-maximum (FWHM) angular divergence in a Bragg-reflecting geometry. For the experiments described in this report, the angle between the incident beam and the sample surface was 8.5°. A Debye-Scherrer diffraction image was produced on a phosphor located 76 mm from the polycrystalline sample surface. The phosphor image was coupled to a charge-coupled device (CCD) camera through a coherent fiberoptic bundle. Dynamic single-pulse XRD experiments were conducted with thin foil samples of tin, shock loaded with a 1-mm vitreous carbon back window. Detasheet high explosive with a 2-mm-thick aluminum buffer was used to shock the sample. Analysis of the dynamic shock-loaded tin XRD images revealed a phase transformation of the tin beta phase into an amorphous or liquid state. Identical experiments with shock-loaded aluminum indicated compression of the face-centered-cubic (fcc) aluminum lattice with no phase transformation.

  10. Effect of copper impurity on polycrystalline silicon solar cells

    NASA Technical Reports Server (NTRS)

    Daud, T.; Koliwad, K. M.

    1978-01-01

    The presence of copper impurity, up to 10 to the 15th atoms/cc, in single crystal silicon has been shown to have no deleterious effect on the p-n junction solar cell performance. However, in polycrystalline silicon, copper atoms tend to migrate to the defect sites because of the structural sensitive properties of copper. This study was undertaken to investigate the influence of this behavior of copper impurity on the performance of p-n junction solar cells fabricated from structurally imperfect silicon. Two sets of polycrystalline silicon substrates containing copper were examined. In one set of samples, copper was incorporated during growth, whereas in the other, copper was diffused. Solar cells were fabricated on both the sets of substrates by a standard process. Dark and light I-V and spectral response characteristics of the cells were measured and compared with copper-free polycrystalline silicon solar cells. The results and the model are discussed.

  11. Polycrystalline graphene and other two-dimensional materials

    NASA Astrophysics Data System (ADS)

    Yazyev, Oleg V.; Chen, Yong P.

    2014-10-01

    Graphene, a single atomic layer of graphitic carbon, has attracted intense attention because of its extraordinary properties that make it a suitable material for a wide range of technological applications. Large-area graphene films, which are necessary for industrial applications, are typically polycrystalline -- that is, composed of single-crystalline grains of varying orientation joined by grain boundaries. Here, we present a review of the large body of research reported in the past few years on polycrystalline graphene. We discuss its growth and formation, the microscopic structure of grain boundaries and their relations to other types of topological defect such as dislocations. The Review further covers electronic transport, optical and mechanical properties pertaining to the characterizations of grain boundaries, and applications of polycrystalline graphene. We also discuss research, still in its infancy, performed on other two-dimensional materials such as transition metal dichalcogenides, and offer perspectives for future directions of research.

  12. TOPICAL REVIEW: Modelling polycrystalline solidification using phase field theory

    NASA Astrophysics Data System (ADS)

    Gránásy, László; Pusztai, Tamás; Warren, James A.

    2004-10-01

    We review recent advances made in the phase field modelling of polycrystalline solidification. Areas covered include the development of theory from early approaches that allow for only a few crystal orientations, to the latest models relying on a continuous orientation field and a free energy functional that is invariant to the rotation of the laboratory frame. We discuss a variety of phenomena, including homogeneous nucleation and competitive growth of crystalline particles having different crystal orientations, the kinetics of crystallization, grain boundary dynamics, and the formation of complex polycrystalline growth morphologies including disordered ('dizzy') dendrites, spherulites, fractal-like polycrystalline aggregates, etc. Finally, we extend the approach by incorporating walls, and explore phenomena such as heterogeneous nucleation, particle-front interaction, and solidification in confined geometries (in channels or porous media).

  13. Optical characterizations on surface-polished polycrystalline YAG fibers

    NASA Astrophysics Data System (ADS)

    Kim, Hyunjun; Hay, Randall S.; McDaniel, Sean A.; Cook, Gary; Usechak, Nicholas G.; Urbas, Augustine M.; Lee, HeeDong; Corns, Randall G.; Shugart, Kathleen N.; Kadhim, Ali H.; Brown, Dean P.; Griffin, Benjamin

    2017-05-01

    The superior thermal and optical properties of transparent polycrystalline ceramics make them attractive alternatives to glass-based materials for laser gain media. Fibers have other advantages of compactness, vibration-resistance, and reduced cooling requirements. Recently it was found that surface roughness caused by grain boundary grooving dominated optical scattering even though there were other scattering sources in the fiber. Therefore, a lot of effort went to fabrication of fibers with smooth surfaces. A mechanical polishing method for polycrystalline YAG fibers was developed. The fiber surface roughness was reduced, while maintaining a circular cross-section. Surface-polished 1.5% Ho-doped polycrystalline YAG fiber, 62 mm long with 31 μm diameter, was fabricated, and lasing was demonstrated from this fiber. Effects of surface-polishing on the surface roughness and scattering coefficient are presented, and lasing characteristics are discussed.

  14. New multiphase equation of state for polycrystalline quartz

    SciTech Connect

    Boettger, J.C.; Lyon, S.P.

    1990-10-01

    We have generated separate equations of state (EOS's) for the alpha quartz, coesite, and stishovite phases of polycrystalline quartz (SiO{sub 2}) using the computer program GRIZZLY. We also modified the program GRIZZLY to combine two single-phase EOS's for a given material into a single two-phase EOS via minimization of the Gibbs free energy. This new version of GRIZZLY has been used to generate a three-phase SESAME type EOS for polycrystalline quartz using the three EOS's mentioned above. All four of the EOS's produced for SiO{sub 2} are now available on request. 17 refs., 4 figs., 1 tab.

  15. Software optimization for electrical conductivity imaging in polycrystalline diamond cutters

    SciTech Connect

    Bogdanov, G.; Ludwig, R.; Wiggins, J.; Bertagnolli, K.

    2014-02-18

    We previously reported on an electrical conductivity imaging instrument developed for measurements on polycrystalline diamond cutters. These cylindrical cutters for oil and gas drilling feature a thick polycrystalline diamond layer on a tungsten carbide substrate. The instrument uses electrical impedance tomography to profile the conductivity in the diamond table. Conductivity images must be acquired quickly, on the order of 5 sec per cutter, to be useful in the manufacturing process. This paper reports on successful efforts to optimize the conductivity reconstruction routine, porting major portions of it to NVIDIA GPUs, including a custom CUDA kernel for Jacobian computation.

  16. Ultrafast lattice dynamics of single crystal and polycrystalline gold nanofilms☆

    NASA Astrophysics Data System (ADS)

    Hu, Jianbo; Karam, Tony E.; Blake, Geoffrey A.; Zewail, Ahmed H.

    2017-09-01

    Ultrafast electron diffraction is employed to spatiotemporally visualize the lattice dynamics of 11 nm-thick single-crystal and 2 nm-thick polycrystalline gold nanofilms. Surprisingly, the electron-phonon coupling rates derived from two temperature simulations of the data reveal a faster interaction between electrons and the lattice in the case of the single-crystal sample. We interpret this unexpected behavior as arising from quantum confinement of the electrons in the 2 nm-thick gold nanofilm, as supported by absorption spectra, an effect that counteracts the expected increase in the electron scattering off surfaces and grain boundaries in the polycrystalline materials.

  17. Oxidation of polycrystalline materials based on zinc and cadmium chalcogenides

    SciTech Connect

    Gunchenko, N.N.; Dronova, G.N.; Maksimova, I.A.; Mironov, I.A.; Pavlova, V.N.; Pevtsova, N.I.

    1988-06-01

    The resistance of polycrystalline zinc sulfide and selenide and cadmium telluride to atmospheric exposure in heating to 300-700/degrees/C was investigated. Polycrystalline zinc sulfide (KO-2 optical ceramic) was prepared by hot powder molding and zinc selenide and cadmium telluride were prepared by evaporation with filtrations of vapors through porous materials and subsequent condensation on a heated support. Zinc sulfide was most sensitive to oxidation. The rate of oxidation of polycrystals was slightly higher than for single crystals. The possibility of using oxidation for creating protective and antireflective coatings on zinc sulfide and selenide should be noted.

  18. Cu Migration in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christian

    2014-03-12

    An impurity reaction-diffusion model is applied to Cu defects and related intrinsic defects in polycrystalline CdTe for a better understanding of Cu’s role in the cell level reliability of CdTe PV devices. The simulation yields transient Cu distributions in polycrystalline CdTe during solar cell processing and stressing. Preliminary results for Cu migration using available diffusivity and solubility data show that Cu accumulates near the back contact, a phenomena that is commonly observed in devices after back-contact processing or stress conditions.

  19. System of polarization correlometry of biological liquids layers polycrystalline structure

    NASA Astrophysics Data System (ADS)

    Ushenko, A. G.; Boychuk, T. M.; Mincer, O. P.; Angelsky, P. O.; Bodnar, N. B.; Oleinichenko, B. P.; Bizer, L. I.

    2013-09-01

    A model of generalized optical anisotropy of human bile is suggested and a method of polarimetric of the module and phase Fourier of the image of the field of laser radiation is analytically substantiated, that is generated by the mechanisms of linear and circular birefringence of polycrystalline networks with a diagnosis and differentiation of cholelithiasis against a background of chronic cholecystitis.

  20. Mechanical properties of monocrystalline and polycrystalline monolayer black phosphorus

    NASA Astrophysics Data System (ADS)

    Cao, Pinqiang; Wu, Jianyang; Zhang, Zhisen; Ning, Fulong

    2017-01-01

    The mechanical properties of monocrystalline and polycrystalline monolayer black phosphorus (MBP) are systematically investigated using classic molecular dynamic simulations. For monocrystalline MBP, it is found that the shear strain rate, sample dimensions, temperature, atomic vacancies and applied statistical ensemble affect the shear behaviour. The wrinkled morphology is closely connected with the direction of the in-plane shear, dimensions of the samples, and applied ensembles. Particularly, small samples subjected to loading/unloading of the shear deformation along the armchair direction demonstrate a clear mechanical hysteresis loop. For polycrystalline MBP, the maximum shear stress as a function of the average grain size follows an inverse pseudo Hall-Petch type relationship under an isothermal-isobaric (NPT) ensemble, whereas under a canonical (NVT) ensemble, the maximum shear stress of polycrystalline MBP exhibits a ‘flipped’ behaviour. Furthermore, polycrystalline MBP subjected to uniaxial tension also exhibits a strongly grain size-dependent mechanical response, and it can fail by brittle intergranular and transgranular fractures because of its weaker grain boundary structures and the direction-dependent edge energy, respectively. These findings provide useful insight into the mechanical design of BP for nanoelectronic devices.

  1. Raman Microscopic Characterization of Proton-Irradiated Polycrystalline Diamond Films

    NASA Technical Reports Server (NTRS)

    Newton, R. L.; Davidson, J. L.; Lance, M. J.

    2004-01-01

    The microstructural effects of irradiating polycrystalline diamond films with proton dosages ranging from 10(exp 15) to 10(exp 17) H(+) per square centimeter was examined. Scanning Electron Microscopy and Raman microscopy were used to examine the changes in the diamond crystalline lattice as a function of depth. Results indicate that the diamond lattice is retained, even at maximum irradiation levels.

  2. Microstructure evolution of polycrystalline silicon by molecular dynamics simulation

    NASA Astrophysics Data System (ADS)

    Chen, Xiao; Ding, Jianning; Jiang, Cunhua; Liu, Zunfeng; Yuan, Ningyi

    2017-06-01

    Polycrystalline silicon is the dominant material in solar cells and plays an important role in photovoltaic industry. It is important for not only the conventional production of silicon ingots but also the direct growth of silicon wafers to control crystallization for obtaining the desired polycrystalline silicon. To the best of our knowledge, few studies have systematically reported about the effects of crystalline planes on the solidification behavior of liquid silicon and the analysis of the microstructural features of the polysilicon structure. In this study, molecular dynamics simulations were employed to investigate the solidification and microstructure evolution of polysilicon, with focus on the effects of the seed distribution and cooling rate on the growth of polycrystalline silicon. The (110), (111), and (112) planes were extruded by the (100) plane and formed the inclusion shape. The crystallization of silicon consisted of diamond-type structures is relatively high at a low cooling rate. The simulations provide substantial information regarding microstructures and serve as guidance for the growth of polycrystalline silicon.

  3. Molybdenum Silicide Formation on Single Crystal, Polycrystalline and Amorphous Silicon: Growth, Structure and Electrical Properties

    NASA Astrophysics Data System (ADS)

    Doland, Charles Michael

    The solid state reactions that occur between a thin metal film and a silicon substrate are of scientific and technological interest. The initial interactions are poorly understood, yet the final state may critically depend on the initial interactions. In this work, the reactions of thin molybdenum films on amorphous, polycrystalline, and single crystal silicon substrates were studied, with an emphasis on the initial interdiffusion and the nucleation of the crystalline silicide phase. Our research was carried out in an ultrahigh vacuum (UHV) system in order to minimize effects of contaminants. In situ Raman scattering and Auger electron spectroscopy were used to probe the structure and composition of the films. Electron microscopy, low energy electron diffraction and Schottky barrier height measurements were used to obtain additional information. The hexagonal phase of the disilicide (h-MoSi _2) is the first phase formed. This occurs after 30 minute annealing at 400^ circC on clean samples. Impurities interfere with this reaction, but substrate crystallinity has no effect. The hexagonal phase transforms to the tetragonal phase (t-MoSi_2) after 800 ^circC annealing for all substrate types. Contamination retards this reaction, resulting in films containing both phases. For the thin films in this study, the transformation to t-MoSi_2 is accompanied by agglomeration of the films. From bulk thermodynamics, t-MoSi_2 is expected to be the first phase formed, but h -MoSi_2 is the first phase observed. This phase nucleates before t-MoSi_2, due to a lower silicide-silicon interfacial energy. Detailed knowledge of interfacial energies and effects of impurities are required to understand the initial phases of thin film solid state reactions.

  4. Fracture properties of polycrystalline silicon - a material for micro-electro-mechanical systems

    SciTech Connect

    Johnson, G.C.; Jones, P.T.

    1995-12-31

    A great deal of research has been performed during the past few years to apply the microfabrication technology used for making integrated circuits to the manufacture of microscopic pressure sensors, accelerometers, and other micro-electro-mechanical systems (MEMS). One result of this work has been the choice of polycrystalline silicon (polysilicon) as a primary structural material employed in MEMS devices, particularly when the polysilicon has been doped with such elements as phosphorus for improved electrical and mechanical properties. As MEMS devices become more relied upon for real world applications, it will be necessary to establish design rules to ensure adequate product lifetimes. However, very little work has been done to deter- mine the failure mechanisms of polysilicon. The work presented here offers an experimental evaluation of the ultimate strength and fracture toughness of polysilicon with regard to the effects of exposure to hydrofluoric acid, a commonly used etchant in MEMS fabrication. A series of micromechanical structures have been designed to measure the strain at fracture and fracture toughness of a thin film. These test structures are patterned onto a thin film of polysilicon covering a silicon wafer using standard microfabrication techniques. Since the structures have dimensions on the order of microns, hundreds of multiple test structures are patterned on a single wafer providing a large amount of statistical data. Results using these structures indicate that prolonged exposure to HF can result in a decrease in the fracture strength of polysilicon.

  5. The state of the art of thin-film photovoltaics

    SciTech Connect

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

  6. [Study on the micro-infrared spectra and origin of polycrystalline diamonds from Mengyin kimberlite pipes].

    PubMed

    Yang, Zhi-Jun; Liang, Rong; Zeng, Xiang-Qing; Ge, Tie-Yan; Ai, Qun; Zheng, Yun-Long; Peng, Ming-Sheng

    2012-06-01

    The natural polycrystalline diamonds from the Mengyin kimberlite pipes can be classified as the euhedral faceted polycrystalline diamonds and anhedral rounded polycrystalline diamonds. The results of micro-FTIR spectra characterization of the polycrystalline diamonds show that the concentration of nitrogen is low, varying from 16.69 to 72.81 microgram per gram and is different among different diamond grains or position in polycrystalline diamonds. The euhedral faceted polycrystalline diamonds are Ia AB type and have higher concentration of A-center defects than B-center defects. Most of the anhedral rounded polycrystalline diamonds are Ia AB type and have higher content of B-center defects. A minority of the anhedral rounded polycrystalline diamonds have C-center, A-center and B-center defects simultaneously. The polycrystalline diamonds probably originated from the relatively deeper mantle and were not formed in diamond nucleation stage, but in the diamond growth period or some special conditions after the diamond grains were formed already. Furthermore, the euhedral faceted polycrystalline diamonds were formed slightly later and the anhedral rounded polycrystalline diamonds were formed obviously earlier than the diamond single crystals from the Mengyin kimberlite pipes.

  7. Mechanical instability of monocrystalline and polycrystalline methane hydrates

    PubMed Central

    Wu, Jianyang; Ning, Fulong; Trinh, Thuat T.; Kjelstrup, Signe; Vlugt, Thijs J. H.; He, Jianying; Skallerud, Bjørn H.; Zhang, Zhiliang

    2015-01-01

    Despite observations of massive methane release and geohazards associated with gas hydrate instability in nature, as well as ductile flow accompanying hydrate dissociation in artificial polycrystalline methane hydrates in the laboratory, the destabilising mechanisms of gas hydrates under deformation and their grain-boundary structures have not yet been elucidated at the molecular level. Here we report direct molecular dynamics simulations of the material instability of monocrystalline and polycrystalline methane hydrates under mechanical loading. The results show dislocation-free brittle failure in monocrystalline hydrates and an unexpected crossover from strengthening to weakening in polycrystals. Upon uniaxial depressurisation, strain-induced hydrate dissociation accompanied by grain-boundary decohesion and sliding destabilises the polycrystals. In contrast, upon compression, appreciable solid-state structural transformation dominates the response. These findings provide molecular insight not only into the metastable structures of grain boundaries, but also into unusual ductile flow with hydrate dissociation as observed during macroscopic compression experiments. PMID:26522051

  8. Backside damage-gettering in cast polycrystalline silicon

    NASA Technical Reports Server (NTRS)

    Culik, J.; Roncin, S.; Alexander, P.

    1984-01-01

    The technique of backside-damage gettering improves the performance of short minority-carrier diffusion length, large-grain (grain diameter greater than 1 to 2 mm), cast polycrystalline silicon. On average, increases of nearly 20 percent in short-circuit current, 10 mV in open-circuit voltage, and 15 percent in peak-power were obtained by heat-treating 300 micron thick polycrystalline wafers at 1000 C in flowing nitrogen for 5 hours. Additional measurements of the bulk and space-charge recombination current components indicate that this improvement results from a significant increase in the minority-carrier diffusion length due to gettering of impurities from the bulk.

  9. Ultrathin polycrystalline 6,13-Bis(triisopropylsilylethynyl)-pentacene films

    SciTech Connect

    Jung, Min-Cherl; Zhang, Dongrong; Nikiforov, Gueorgui O.; Lee, Michael V.; Qi, Yabing; Joo Shin, Tae; Ahn, Docheon; Lee, Han-Koo; Baik, Jaeyoon; Shin, Hyun-Joon

    2015-03-15

    Ultrathin (<6 nm) polycrystalline films of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-P) are deposited with a two-step spin-coating process. The influence of spin-coating conditions on morphology of the resulting film was examined by atomic force microscopy. Film thickness and RMS surface roughness were in the range of 4.0–6.1 and 0.6–1.1 nm, respectively, except for small holes. Polycrystalline structure was confirmed by grazing incidence x-ray diffraction measurements. Near-edge x-ray absorption fine structure measurements suggested that the plane through aromatic rings of TIPS-P molecules was perpendicular to the substrate surface.

  10. Microscopic studies of polycrystalline nanoparticle growth in free space

    NASA Astrophysics Data System (ADS)

    Mohan, A.; Kaiser, M.; Verheijen, M. A.; Schropp, R. E. I.; Rath, J. K.

    2017-06-01

    We have extensively studied by multiple microscopic techniques the growth and crystallization of silicon nanoparticles in pulsed SiH4/Ar plasmas. We observe that the crystallinity of the particles can be tuned from amorphous to crystalline by altering the plasma ON time, tON. Three phases can be identified as a function of tON. Microscopic studies reveal that, in the initial gas phase (phase I) single particles of polycrystalline nature are formed which according to our hypothesis grow out of a single nucleus. The individual crystallites of the polycrystalline particles become bigger crystalline regions which marks the onset of cauliflower shaped particles (phase II). At longer tON (phase III) distinct cauliflower particles are formed by the growth of these crystalline regions by local epitaxy.

  11. Further development and application of polycrystalline metal whiskers

    NASA Technical Reports Server (NTRS)

    Schladitz, H. J.

    1979-01-01

    High strength metal whiskers have a larger versatile field of application than monocrystalline whiskers. Although polycrystalline metal whiskers can be used for composites, preferably by extrusion in thermoplastics or by infiltration of resins or metals into whisker networks, the chief application at present may be the production and various use of whisker networks. Such networks can be produced up to high degrees of porosity and besides high mechanical strength, they have high inside surfaces and high electric conductivity. There are for instance, applications concerning construction of electrodes for batteries and fuel cells, catalysts and also new heat-exchanger material, capable of preparing fuel oil and gasoline in order to assist a high-efficiency combustion. The technical application of polycrystalline metal whiskers require their modification as well as the construction of a pilot production unit.

  12. Influence of substrates on formation of polycrystalline silicon nanowire films

    NASA Astrophysics Data System (ADS)

    Kato, Shinya; Yamazaki, Tatsuya; Miyajima, Shinsuke; Konagai, Makoto

    2014-10-01

    Polycrystalline silicon nanowires (poly-SiNWs) films were successfully prepared by using metal assisted chemical etching of polycrystalline silicon (poly-Si) films. The poly-Si films were prepared by solid-phase crystallization of amorphous silicon (a-Si) deposited by different deposition techniques on different substrates. In the case of the electron beam evaporated a-Si on a quartz substrate, the formation of poly-SiNWs was not observed and the structure was found to be porous silicon. On the other hand, poly-SiNWs successfully formed from poly-Si on a silicon substrate. We also found that deposition techniques for a-Si films affect the formation of poly-SiNWs.

  13. Compton profile study of polycrystalline ZnBr{sub 2}

    SciTech Connect

    Dhaka, M. S.; Sharma, G.; Mishra, M. C.; Kothari, R. K.; Sharma, B. K.

    2010-12-01

    The first ever Compton profile study of polycrystalline ZnBr{sub 2} is presented in this paper. The measurement of polycrystalline sample of ZnBr{sub 2} is performed using 59.54 keV gamma-rays emanating from an {sup 241}Am radioisotope. Theoretical calculations are performed following the Ionic model calculations for a number of configurations Zn{sup +x}Br{sub 2}{sup -x/2}(0.0{<=}x{<=}2.0 in step of 0.5) utilizing free atom profiles. The ionic model suggest transfer of 2.0 electrons from 4 s state of Zn to 4 p state of two Br atoms. The autocorrelation function B(z) is also derived from experiment and the most favoured ionic valence Compton profiles.

  14. Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates

    SciTech Connect

    Seo, Won-Oh; Kim, Jihyun; Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol; Kim, Donghwan

    2014-08-25

    We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2 MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

  15. Coulometric Study of Ethanol Adsorption at a Polycrystalline Platinum Electrode

    DTIC Science & Technology

    2011-07-01

    value of the ratio Ian/Icalc: 1. The minimal ratio would be 1, corresponding to a one- electron oxidation of one-site attached CH3CH2O surface...Coulometric Study of Ethanol Adsorption at a Polycrystalline Platinum Electrode Sol Gilman Sensors and Electron Devices Directorate, ARL...noble metals and noble metal alloys that can provide what amounts to an adsorbed oxygen “valve” for initiating adsorption/reaction on a clean and

  16. Acoustic Nonlinearity in Polycrystalline Nickel from Fatigue-Generated Microstructures

    SciTech Connect

    Cantrell, John H.

    2005-04-09

    An analytical model of the nonlinear interaction of ultrasonic waves with dislocation substructures formed during the fatigue of wavy slip metals is presented. The model is applied to the calculation of the acoustic nonlinearity parameters {beta} of polycrystalline nickel for increasingly higher levels of fatigue from the virgin state. The values calculated for stress-controlled loading at 345 MPa predict a monotonic increase in {beta} of more than 390 percent as a function of percent life to fracture due to substructural evolution.

  17. Modified Sachs's Model of Deformation of Polycrystalline Magnesium

    NASA Astrophysics Data System (ADS)

    Kesarev, A. G.; Vlasova, A. M.

    2017-09-01

    There are a large number of approaches to a description of work hardening of metal polycrystals with various crystal lattices. In the present work, Sachs's model is generalized to uniaxial tension/compression of polycrystalline magnesium with hexagonal densely packed crystal lattice. The tensile yield stress is estimated taking into account two deformation modes: (0001)< 11\\overline{2}0> easy basal slip and (10\\overline{1}2)< \\overline{1}011> twinning.

  18. A characterization study of a hydroxylated polycrystalline tin oxide surface

    NASA Technical Reports Server (NTRS)

    Hoflund, Gar B.; Grogan, Austin L., Jr.; Asbury, Douglas A.; Schryer, David R.

    1989-01-01

    In this study Auger electron spectroscopy, electron spectroscopy for chemical analysis (ESCA) and electron-stimulated desorption (ESD) have been used to examine a polycrystalline tin oxide surface before and after annealing in vacuum at 500 C. Features due to surface hydroxyl groups are present in both the ESCA and ESD spectra, and ESD shows that several chemical states of hydrogen are present. Annealing at 500 C causes a large reduction in the surface hydrogen concentration but not complete removal.

  19. Hardness of polycrystalline tungsten and molybdenum oxides at elevated temperatures

    SciTech Connect

    Lee, M.; Flom, D.G. . Corporate Research and Development Center)

    1990-07-01

    Vickers hardness of WO{sub 3} W{sub 18}O{sub 49} and MoO{sub 2} is reported for temperatures up to 800{degrees}C. Polycrystalline samples of the oxides were prepared by hot-pressing, and hardness was determined using a Vickers hardness tester modified for high-temperature applications. The hardness of a heavily deformed tungsten rod was also measured as a reference.

  20. A characterization study of a hydroxylated polycrystalline tin oxide surface

    NASA Technical Reports Server (NTRS)

    Hoflund, Gar B.; Grogan, Austin L., Jr.; Asbury, Douglas A.; Schryer, David R.

    1989-01-01

    In this study Auger electron spectroscopy, electron spectroscopy for chemical analysis (ESCA) and electron-stimulated desorption (ESD) have been used to examine a polycrystalline tin oxide surface before and after annealing in vacuum at 500 C. Features due to surface hydroxyl groups are present in both the ESCA and ESD spectra, and ESD shows that several chemical states of hydrogen are present. Annealing at 500 C causes a large reduction in the surface hydrogen concentration but not complete removal.

  1. Grain-boundary-induced melting in quenched polycrystalline monolayers.

    PubMed

    Deutschländer, Sven; Boitard, Charlotte; Maret, Georg; Keim, Peter

    2015-12-01

    Melting in two dimensions can successfully be explained with the Kosterlitz-Thouless-Halperin-Nelson-Young (KTHNY) scenario which describes the formation of the high-symmetry phase with the thermal activation of topological defects within an (ideally) infinite monodomain. With all state variables being well defined, it should hold also as freezing scenario where oppositely charged topological defects annihilate. The Kibble-Zurek mechanism, on the other hand, shows that spontaneous symmetry breaking alongside a continuous phase transition cannot support an infinite monodomain but leads to polycrystallinity. For any nonzero cooling rate, critical fluctuations will be frozen out in the vicinity of the transition temperature. This leads to domains with different director of the broken symmetry, separated by a defect structure, e.g., grain boundaries in crystalline systems. After instantaneously quenching a colloidal monolayer from a polycrystalline to the isotropic fluid state, we show that such grain boundaries increase the probability for the formation of dislocations. In addition, we determine the temporal decay of defect core energies during the first few Brownian times after the quench. Despite the fact that the KTHNY scenario describes a continuous phase transition and phase equilibrium does not exist, melting in polycrystalline samples starts at grain boundaries similar to first-order phase transitions.

  2. In Situ Graphene Growth Dynamics on Polycrystalline Catalyst Foils

    PubMed Central

    2016-01-01

    The dynamics of graphene growth on polycrystalline Pt foils during chemical vapor deposition (CVD) are investigated using in situ scanning electron microscopy and complementary structural characterization of the catalyst with electron backscatter diffraction. A general growth model is outlined that considers precursor dissociation, mass transport, and attachment to the edge of a growing domain. We thereby analyze graphene growth dynamics at different length scales and reveal that the rate-limiting step varies throughout the process and across different regions of the catalyst surface, including different facets of an individual graphene domain. The facets that define the domain shapes lie normal to slow growth directions, which are determined by the interfacial mobility when attachment to domain edges is rate-limiting, as well as anisotropy in surface diffusion as diffusion becomes rate-limiting. Our observations and analysis thus reveal that the structure of CVD graphene films is intimately linked to that of the underlying polycrystalline catalyst, with both interfacial mobility and diffusional anisotropy depending on the presence of step edges and grain boundaries. The growth model developed serves as a general framework for understanding and optimizing the growth of 2D materials on polycrystalline catalysts. PMID:27576749

  3. Grain-boundary-induced melting in quenched polycrystalline monolayers

    NASA Astrophysics Data System (ADS)

    Deutschländer, Sven; Boitard, Charlotte; Maret, Georg; Keim, Peter

    2015-12-01

    Melting in two dimensions can successfully be explained with the Kosterlitz-Thouless-Halperin-Nelson-Young (KTHNY) scenario which describes the formation of the high-symmetry phase with the thermal activation of topological defects within an (ideally) infinite monodomain. With all state variables being well defined, it should hold also as freezing scenario where oppositely charged topological defects annihilate. The Kibble-Zurek mechanism, on the other hand, shows that spontaneous symmetry breaking alongside a continuous phase transition cannot support an infinite monodomain but leads to polycrystallinity. For any nonzero cooling rate, critical fluctuations will be frozen out in the vicinity of the transition temperature. This leads to domains with different director of the broken symmetry, separated by a defect structure, e.g., grain boundaries in crystalline systems. After instantaneously quenching a colloidal monolayer from a polycrystalline to the isotropic fluid state, we show that such grain boundaries increase the probability for the formation of dislocations. In addition, we determine the temporal decay of defect core energies during the first few Brownian times after the quench. Despite the fact that the KTHNY scenario describes a continuous phase transition and phase equilibrium does not exist, melting in polycrystalline samples starts at grain boundaries similar to first-order phase transitions.

  4. Refractive index of infrared-transparent polycrystalline alumina

    NASA Astrophysics Data System (ADS)

    Harris, Daniel C.; Johnson, Linda F.; Cambrea, Lee R.; Baldwin, Lawrence; Baronowski, Meghan; Zelmon, David E.; Poston, William B.; Kunkel, John D.; Parish, Mark; Pascucci, Marina R.; Gannon, John J.; Wen, Tzu-Chien

    2017-05-01

    The refractive index of polycrystalline α-alumina prisms with an average grain size of 0.6 μm is reported for the wavelength range 0.9 to 5.0 and the temperature range 293 to 498K. Results agree within 0.0002 with the refractive index predicted for randomly oriented grains of single-crystal aluminum oxide. This paper provides tutorial background on the behavior of birefringent materials and explains how the refractive index of polycrystalline alumina can be predicted from the ordinary and extraordinary refractive indices of sapphire. The refractive index of polycrystalline alumina is described by 𝑛𝑛2 - 1 = (A+B [𝑇𝑇2-𝑇𝑇20]) +Dλ2 /λ2-(λ1+C [𝑇𝑇2-𝑇𝑇20])2 + λ2-λ22 where wavelength λ is expressed in μm, To = 295.15 K, A = 2.07156, B = 6.273× 10-8, λ1 = 0.091293, C = -1.9516 × 10-8, D = 5.62675, and λ2 = 18.5533. The slope dn/dT varies with λ and T, but has the approximate value 1.4 × 10-5 K-1 in the range 296-498 K.

  5. Tribological properties of sintered polycrystalline and single crystal silicon carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.; Srinivasan, M.

    1982-01-01

    Tribological studies and X-ray photoelectron spectroscopy analyses were conducted with sintered polycrystalline and single crystal silicon carbide surfaces in sliding contact with iron at various temperatures to 1500 C in a vacuum of 30 nPa. The results indicate that there is a significant temperature influence on both the friction properties and the surface chemistry of silicon carbide. The main contaminants on the as received sintered polycrystalline silicon carbide surfaces are adsorbed carbon, oxygen, graphite, and silicon dioxide. The surface revealed a low coefficient of friction. This is due to the presence of the graphite on the surface. At temperatures of 400 to 600 C graphite and copious amount of silicon dioxide were observed on the polycrystalline silicon carbide surface in addition to silicon carbide. At 800 C, the amount of the silicon dioxide decreased rapidly and the silicon carbide type silicon and carbon peaks were at a maximum intensity in the XPS spectra. The coefficients of friction were high in the temperature range 400 to 800 C. Small amounts of carbon and oxygen contaminants were observed on the as received single crystal silicon carbide surface below 250 C. Silicon carbide type silicon and carbon peaks were seen on the silicon carbide in addition to very small amount of graphite and silicon dioxide at temperatures of 450 to 800 C.

  6. Stress-dependent ultrasonic scattering in polycrystalline materials.

    PubMed

    Kube, Christopher M; Turner, Joseph A

    2016-02-01

    Stress-dependent elastic moduli of polycrystalline materials are used in a statistically based model for the scattering of ultrasonic waves from randomly oriented grains that are members of a stressed polycrystal. The stress is assumed to be homogeneous and can be either residual or generated from external loads. The stress-dependent elastic properties are incorporated into the definition of the differential scattering cross-section, which defines how strongly an incident wave is scattered into various directions. Nine stress-dependent differential scattering cross-sections or scattering coefficients are defined to include all possibilities of incident and scattered waves, which can be either longitudinal or (two) transverse wave types. The evaluation of the scattering coefficients considers polycrystalline aluminum that is uniaxially stressed. An analysis of the influence of incident wave propagation direction, scattering direction, frequency, and grain size on the stress-dependency of the scattering coefficients follows. Scattering coefficients for aluminum indicate that ultrasonic scattering is much more sensitive to a uniaxial stress than ultrasonic phase velocities. By developing the stress-dependent scattering properties of polycrystals, the influence of acoustoelasticity on the amplitudes of waves propagating in stressed polycrystalline materials can be better understood. This work supports the ongoing development of a technique for monitoring and measuring stresses in metallic materials.

  7. Nanosized grain polycrystalline scintillators for special nuclear materials detection

    NASA Astrophysics Data System (ADS)

    Chen, C. F.; Cooley, J.; Stanek, C.; Byler, D.; Volz, H.; Dickerson, R.; Dombrowski, D.; Tucker, T.; Bartram, B.; Ewing, B.; Mauro, M.; Weinberg, R.

    2007-09-01

    The aim of this work was to explore the limits of polycrystalline ceramic scintillator in countering the nuclear threat. The goal was to develop a polycrystalline LaBr 3:Ce, which can be processed from ceramic forming techniques and can be produced in large size scintillator panels with lower cost and high production rate. Three high purity raw powders were used as the starting materials including LaBr 3, LaCl 3, and CeBr 3. Powder characteristics were measured. A melt spinning method was used to synthesize the nanoparticle LaBr 3:Ce with stoichiometric compositions. The synthesized nanoparticles were characterized and the average particle size of the synthesized nanoparticle LaBr 3:Ce was about 50 nm. The melt spun powders were consolidated using a "Nanosintering" method to achieve a high density while maintaining the stoichiometric composition. The grain size of the sintered polycrystalline is about 50 nm, which shows no grain growth during the densification process.

  8. Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988

    NASA Technical Reports Server (NTRS)

    Costogue, E. N.; Ferber, R.; Lutwack, R.; Lorenz, J. H.; Pellin, R.

    1984-01-01

    Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.

  9. Comparison of effective transverse piezoelectric coefficients e31,f of Pb(Zr,Ti)O3 thin films between direct and converse piezoelectric effects

    NASA Astrophysics Data System (ADS)

    Tsujiura, Yuichi; Kawabe, Saneyuki; Kurokawa, Fumiya; Hida, Hirotaka; Kanno, Isaku

    2015-10-01

    We evaluated the effective transverse piezoelectric coefficients (e31,f) of Pb(Zr,Ti)O3 (PZT) thin films from both the direct and converse piezoelectric effects of unimorph cantilevers. (001) preferentially oriented polycrystalline PZT thin films and (001)/(100) epitaxial PZT thin films were deposited on (111)Pt/Ti/Si and (001)Pt/MgO substrates, respectively, by rf-magnetron sputtering, and their piezoelectric responses owing to intrinsic and extrinsic effects were examined. The direct and converse |e31,f| values of the polycrystalline PZT thin films were calculated as 6.4 and 11.5-15.0 C/m2, respectively, whereas those of the epitaxial PZT thin films were calculated as 3.4 and 4.6-4.8 C/m2, respectively. The large |e31,f| of the converse piezoelectric property of the polycrystalline PZT thin films is attributed to extrinsic piezoelectric effects. Furthermore, the polycrystalline PZT thin films show a clear nonlinear piezoelectric contribution, which is the same as the Rayleigh-like behavior reported in bulk PZT. In contrast, the epitaxial PZT thin films on the MgO substrate show a piezoelectric response owing to the intrinsic and linear extrinsic effects, and no nonlinear contribution was observed.

  10. Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl{sub 2}

    SciTech Connect

    Jensen, S. A. E-mail: Wyatt.Metzger@nrel.gov; Burst, J. M.; Duenow, J. N.; Guthrey, H. L.; Moseley, J.; Moutinho, H. R.; Johnston, S. W.; Kanevce, A.; Al-Jassim, M. M.; Metzger, W. K. E-mail: Wyatt.Metzger@nrel.gov

    2016-06-27

    For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as silicon and perovskites have produced devices with grains ranging from less than a micron to more than 1 mm. Because the lifetimes in as-deposited polycrystalline CdTe films are typically limited to less than a few hundred picoseconds, a CdCl{sub 2} treatment is generally used to improve the lifetime; but this treatment may limit the achievable hole density by compensation. Here, we establish methods to produce CdTe films with grain sizes ranging from hundreds of nanometers to several hundred microns by close-spaced sublimation at industrial manufacturing growth rates. Two-photon excitation photoluminescence spectroscopy shows a positive correlation of lifetime with grain size. Large-grain, as-deposited CdTe exhibits lifetimes exceeding 10 ns without Cl, S, O, or Cu. This uncompensated material allows dopants such as P to achieve a hole density of 10{sup 16 }cm{sup −3}, which is an order of magnitude higher than standard CdCl{sub 2}-treated devices, without compromising the lifetime.

  11. Modeling and simulation of the deposition/relaxation processes of polycrystalline diatomic structures of metallic nitride films

    NASA Astrophysics Data System (ADS)

    García, M. F.; Restrepo-Parra, E.; Riaño-Rojas, J. C.

    2015-05-01

    This work develops a model that mimics the growth of diatomic, polycrystalline thin films by artificially splitting the growth into deposition and relaxation processes including two stages: (1) a grain-based stochastic method (grains orientation randomly chosen) is considered and by means of the Kinetic Monte Carlo method employing a non-standard version, known as Constant Time Stepping, the deposition is simulated. The adsorption of adatoms is accepted or rejected depending on the neighborhood conditions; furthermore, the desorption process is not included in the simulation and (2) the Monte Carlo method combined with the metropolis algorithm is used to simulate the diffusion. The model was developed by accounting for parameters that determine the morphology of the film, such as the growth temperature, the interacting atomic species, the binding energy and the material crystal structure. The modeled samples exhibited an FCC structure with grain formation with orientations in the family planes of < 111 >, < 200 > and < 220 >. The grain size and film roughness were analyzed. By construction, the grain size decreased, and the roughness increased, as the growth temperature increased. Although, during the growth process of real materials, the deposition and relaxation occurs simultaneously, this method may perhaps be valid to build realistic polycrystalline samples.

  12. Processing and Characterization of Polycrystalline Yag (Yttrium Aluminum Garnet) Core-Clad Fibers - Postprint

    DTIC Science & Technology

    2015-01-01

    AFRL-RY-WP-TP-2014-0296 PROCESSING AND CHARACTERIZATION OF POLYCRYSTALLINE YAG ( YTTRIUM ALUMINUM GARNET) CORE-CLAD FIBERS -POSTPRINT...April 2013 – 1 April 2014 4. TITLE AND SUBTITLE PROCESSING AND CHARACTERIZATION OF POLYCRYSTALLINE YAG ( YTTRIUM ALUMINUM GARNET) CORE-CLAD FIBERS...of polycrystalline YAG ( Yttrium Aluminum Garnet) core-clad fibers Hyun Jun Kima,b, Geoff E. Faira*, Santeri A

  13. Influence of CuxS back contact on CdTe thin film solar cells

    NASA Astrophysics Data System (ADS)

    Zhi, Lei; Lianghuan, Feng; Guanggen, Zeng; Wei, Li; Jingquan, Zhang; Lili, Wu; Wenwu, Wang

    2013-01-01

    We present a detailed study on CuxS polycrystalline thin films prepared by chemical bath method and utilized as back contact material for CdTe solar cells. The characteristics of the films deposited on Si-substrate are studied by XRD. The results show that as-deposited CuxS thin film is in an amorphous phase while after annealing, samples are in polycrystalline phases with increasing temperature. The thickness of CuxS thin films has great impact on the performance of CdS/CdTe solar cells. When the thickness of the film is about 75 nm the performance of CdS/CdTe thin film solar cells is found to be the best. The energy conversion efficiency can be higher than 12.19%, the filling factor is higher than 68.82% and the open-circuit voltage is more than 820 mV.

  14. Room temperature ferroelectricity in continuous croconic acid thin films

    SciTech Connect

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S.; Zhang, Xiaozhe; Wang, Xiao; Yu, Le; Cheng, Xuemei; DiChiara, Anthony D.; Gruverman, Alexei E-mail: a.enders@me.com Enders, Axel E-mail: a.enders@me.com Xu, Xiaoshan E-mail: a.enders@me.com

    2016-09-05

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  15. Room temperature ferroelectricity in continuous croconic acid thin films

    NASA Astrophysics Data System (ADS)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Zhang, Xiaozhe; Wang, Xiao; Yu, Le; Ahmadi, Zahra; Costa, Paulo S.; DiChiara, Anthony D.; Cheng, Xuemei; Gruverman, Alexei; Enders, Axel; Xu, Xiaoshan

    2016-09-01

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50-100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  16. Review of thin film solar cell technology and applications for ultra-light spacecraft solar arrays

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.

    1991-01-01

    Developments in thin-film amorphous and polycrystalline photovoltaic cells are reviewed and discussed with a view to potential applications in space. Two important figures of merit are discussed: efficiency (i.e., what fraction of the incident solar energy is converted to electricity), and specific power (power to weight ratio).

  17. [Research on the polycrystalline CdS thin films prepared by close-spaced sublimation].

    PubMed

    Yang, Ding-Yu; Xia, Geng-Pei; Zheng, Jia-Gui; Feng, Liang-Huan; Cai, Ya-Ping

    2009-01-01

    In the present paper, the factors of influence on the deposition rate of CdS films prepared by close-spaced sublimation (CSS) were first studied systematically, and it was found from the experiments that the deposition rate increased with the raised temperature of sublimation source, while decreased with the raised substrate temperature and the deposition pressure. The structure, morphology and light transmittance of the prepared samples were tested subsequently, and the results show: (1) The CdS films deposited under different oxygen partial pressure all present predominating growth lattice orientation (103), and further more the films will be strengthened after annealed under CdCl2 atmosphere. (2) The AFM images of CdS show that the films are compact and uniform in grain diameter, and the grain size becomes larger with the increased substrate temperature. Along with it, the film roughness was also augmented. (3) The transmittance in the shortwave region of visible light through the CdS films would be enhanced when its thickness is reduced, and that will help improve the shortwave spectral response of CdTe solar cells. Finally, the prepared CdS films were employed to fabricate CdTe solar cells, which have achieved a conversion efficiency of 10.29%, and thus the feasibility of CSS process in the manufacture of CdTe solar cells was validated primarily.

  18. Development of low cost thin film polycrystalline silicon solar cells for terrestrial applications

    NASA Technical Reports Server (NTRS)

    Chu, T. L.

    1975-01-01

    The AMO efficiencies (no anti-reflection coating) obtained to date are 2.5% for solar cells deposited on graphite substrates, 3.5% for solar cells deposited on metallurgical silicon substrates, and 4.5% for solar cells fabricated from purified metallurgical silicon.

  19. Research on polycrystalline thin film submodules based on CuInSe sub 2 materials

    SciTech Connect

    Catalano, A.; Arya, R.; Carr, L.; Fieselmann, B.; Lommasson, T.; Podlesny, R.; Russell, L.; Skibo, S.; Rothwarf, A.; Birkmire, R. )

    1992-05-01

    This report describes progress during the first year of a three-year research program to develop 12%-efficient CuInSe{sub 2} (CIS) submodules with area greater than 900 cm{sup 2}. To meet this objective, the program was divided into five tasks: (1) windows, contacts, substrates; (2) absorber material; (3) device structure; (4) submodule design and encapsulation; and (5) process optimization. In the first year of the program, work was concentrated on the first three tasks with an objective to demonstrate a 9%-efficient CIS solar cell. 7 refs.

  20. Effect of thermal annealing on properties of polycrystalline ZnO thin films

    NASA Astrophysics Data System (ADS)

    Gritsenko, L. V.; Abdullin, Kh. A.; Gabdullin, M. T.; Kalkozova, Zh. K.; Kumekov, S. E.; Mukash, Zh. O.; Sazonov, A. Yu.; Terukov, E. I.

    2017-01-01

    Electrical properties (density, carriers mobility, resistivity), optical absorption and photoluminescence spectra of ZnO, grown by MOCVD and hydrothermal methods, have been investigated depending on the annealing and treatment modes in a hydrogen plasma. It has been shown that the electrical and photoluminescent (PL) properties of ZnO are strongly dependent on gas atmosphere during annealing. The annealing in oxygen atmosphere causes a sharp drop of carrier mobility and films conductivity due to the absorption of oxygen on grain boundaries. The process of ZnO electrical properties recovery by the thermal annealing in inert atmosphere (nitrogen), in oil (2×10-2 mbar) and oil-free (1×10-5 mbar) vacuum has been investigated. The hydrogen plasma treatment influence on the intensity of near-band-gap emission (NBE) has been studied. The effect of annealing and subsequent plasma treatment on PL intensity depends on the gas atmosphere of preliminary thermal annealing.

  1. Improved Intrinsic Stability of CdTe Polycrystalline Thin Film Devices

    SciTech Connect

    Albin, D.; Berniard, T.; McMahon, T.; Noufi, R.; Demtsu, S.

    2005-01-01

    A systems-driven approach linking upstream solar cell device fabrication history with downstream performance and stability has been applied to CdS/CdTe small-area device research. The best resulting initial performance (using thinner CdS, thicker CdTe, no oxygen during VCC, and the use of NP etch) was shown to simultaneously correlate with poor stability. Increasing the CdS layer thickness significantly improved stability at only a slight decrease in overall performance. It was also determined that cell perimeter effects can accelerate degradation in these devices. A ''margined'' contact significantly reduces the contribution of edge shunting to degradation, and thus yields a more accurate determination of the intrinsic stability. Pspice discrete element models demonstrate how spatially localized defects can effectively dominate degradation. Mitigation of extrinsic shunting improved stabilized efficiency degradation levels (SEDL) to near 20% in 100 C tests. Further process optimization to reduce intrinsic effects improved SEDL to better than 10% at the same stress temperatures and times.

  2. Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Liu, Yuan; Liu, Kai; Chen, Rong-Sheng; Liu, Yu-Rong; En, Yun-Fei; Li, Bin; Fang, Wen-Xiao

    2017-01-01

    Not Available Supported by the National Natural Science Foundation of China under Grant Nos 61574048 and 61204112, the Science and Technology Research Project of Guangdong Province under Grant Nos 2015B090912002 and 2014A030313656, and the Pearl River S&T Nova Program of Guangzhou.

  3. Unraveling Charge Carriers Generation, Diffusion, and Recombination in Formamidinium Lead Triiodide Perovskite Polycrystalline Thin Film.

    PubMed

    Piatkowski, Piotr; Cohen, Boiko; Ponseca, Carlito S; Salado, Manuel; Kazim, Samrana; Ahmad, Shahzada; Sundström, Villy; Douhal, Abderrazzak

    2016-01-07

    We report on studies of the formamidinium lead triiodide (FAPbI3) perovskite film using time-resolved terahertz (THz) spectroscopy (TRTS) and flash photolysis to explore charge carriers generation, migration, and recombination. The TRTS results show that upon femtosecond excitation above the absorption edge, the initial high photoconductivity (∼75 cm(2) V(-1) s(-1)) remains constant at least up to 8 ns, which corresponds to a diffusion length of 25 μm. Pumping below the absorption edge results in a mobility of 40 cm(2) V(-1) s(-1) suggesting lower mobility of charge carriers located at the bottom of the conduction band or shallow sub-bandgap states. Furthermore, analysis of the THz kinetics reveals rising components of <1 and 20 ps, reflecting dissociation of excitons having different binding energies. Flash photolysis experiments indicate that trapped charge carriers persist for milliseconds.

  4. Patterning of Bi2Te3 Polycrystalline Thin-Films on Silicon

    DTIC Science & Technology

    2008-01-01

    Regia .” Since we desire to use photoresist as the masking material for process flexibility, we used a diluted version of Aqua Regia (3 HCl:1 HNO3...spin coat AZ5214e at 1200 rpm for 30 s, (2) soft bake at 110 °C for 60 s, (3) contact exposure for 3.3 s, (4) reverse -image bake at120 °C for 30 s...well as the metal pad. As an alternative, Shafai and Brett (5) used a diluted combination of HCl and nitric acid (HNO3), a variant of the common “ Aqua

  5. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report

    SciTech Connect

    Trefny, J.U.; Mao, D.

    1998-01-01

    During the past year, Colorado School of Mines (CSM) researchers performed systematic studies of the growth and properties of electrodeposition CdS and back-contact formation using Cu-doped ZnTe, with an emphasis on low Cu concentrations. CSM also started to explore the stability of its ZnTe-Cu contacted CdTe solar cells. Researchers investigated the electrodeposition of CdS and its application in fabricating CdTe/CdS solar cells. The experimental conditions they explored in this study were pH from 2.0 to 3.0; temperatures of 80 and 90 C; CdCl{sub 2} concentration of 0.2 M; deposition potential from {minus}550 to {minus}600 mV vs. Ag/AgCl electrode; [Na{sub 2}S{sub 2}O{sub 4}] concentration between 0.005 and 0.05 M. The deposition rate increases with increase of the thiosulfate concentration and decrease of solution pH. Researchers also extended their previous research of ZnTe:Cu films by investigating films doped with low Cu concentrations (< 5 at. %). The low Cu concentration enabled them to increase the ZnTe:Cu post-annealing temperature without causing excessive Cu diffusion into CdTe or formation of secondary phases. The effects of Cu doping concentration and post-deposition annealing temperature on the structural, compositional, and electrical properties of ZnTe were studied systematically using X-ray diffraction, atomic force microscopy, electron microprobe, Hall effect, and conductivity measurements.

  6. Radiation-Induced Reduction of Ceria in Single and Polycrystalline Thin Films

    SciTech Connect

    Kumar, Amit; Devanathan, Ramaswami; Shutthanandan, V.; Kuchibhatla, Satyanarayana V N T; Karakoti, Ajay S.; Yang, Yong; Thevuthasan, Suntharampillai; Seal, Sudipta

    2012-01-12

    Ceria (CeO{sub 2}) is a technologically important ceramic material with a wide range of neoteric applications in catalysis, solid oxide fuel cells, oxygen gas sensors, hydrogen production, and ultraviolet shielding. Recent research has revealed promising biomedical applications of ceria. Nanoparticles of ceria have been shown to protect healthy cells from radiation-induced cellular damage. The mechanisms governing the radioprotection characteristics of ceria nanoparticles are not well understood and it has been hypothesized that reversible switching between Ce{sup 4+} and Ce{sup 3+} states may enable ceria nanoparticles to mop up free radicals.

  7. Ion beam nitriding of single and polycrystalline austenitic stainless steel

    SciTech Connect

    Abrasonis, G.; Riviere, J.P.; Templier, C.; Declemy, A.; Pranevicius, L.; Milhet, X.

    2005-04-15

    Polycrystalline and single crystalline [orientations (001) and (011)] AISI 316L austenitic stainless steel was implanted at 400 deg. C with 1.2 keV nitrogen ions using a high current density of 0.5 mA cm{sup -2}. The nitrogen distribution profiles were determined using nuclear reaction analysis (NRA). The structure of nitrided polycrystalline stainless steel samples was analyzed using glancing incidence and symmetric x-ray diffraction (XRD) while the structure of the nitrided single crystalline stainless steel samples was analyzed using x-ray diffraction mapping of the reciprocal space. For identical treatment conditions, it is observed that the nitrogen penetration depth is larger for the polycrystalline samples than for the single crystalline ones. The nitrogen penetration depth depends on the orientation, the <001> being more preferential for nitrogen diffusion than <011>. In both type of samples, XRD analysis shows the presence of the phase usually called 'expanded' austenite or {gamma}{sub N} phase. The lattice expansion depends on the crystallographic plane family, the (001) planes showing an anomalously large expansion. The reciprocal lattice maps of the nitrided single crystalline stainless steel demonstrate that during nitriding lattice rotation takes place simultaneously with lattice expansion. The analysis of the results based on the presence of stacking faults, residual compressive stress induced by the lattice expansion, and nitrogen concentration gradient indicates that the average lattice parameter increases with the nitrided layer depth. A possible explanation of the anomalous expansion of the (001) planes is presented, which is based on the combination of faster nitriding rate in the (001) oriented grains and the role of stacking faults and compressive stress.

  8. Conductive polycrystalline diamond probes for local anodic oxidation lithography.

    PubMed

    Ulrich, A J; Radadia, A D

    2015-11-20

    This is the first report characterizing local anodic oxidation (LAO) lithography performed using conductive monolithic polycrystalline diamond (MD) and conductive polycrystalline diamond-coated (DC) tips and comparing it to the diamond-like carbon-coated and metal-coated silicon tips. The range and the rate of increase in the lithographic linewidth and height with tip bias (dw/dV and dh/dV) differed based on the tip material. The DC tips resulted in wider and taller lines and a higher dw/dV and dh/dV compared to metal-coated tips with a similar force constant (k(Avg)). The metal-coated and the DC tips with comparable k(Avg) showed comparable threshold voltages, whereas the MD tips with similar k(Avg) showed a higher threshold voltage. The MD tips exhibited less than half the height and nearly half the dw/dV and dh/dV obtained with the metal-coated tips with similar k Avg, thus also resulting in a smaller width at -10 V. The linewidths were found to be proportional to the inverse of the log of write speed(v) for all the tips; however, the proportionality constant varied with tip material; the DC tips had larger values, and the MD and the metal-coated tips had comparable values. When varying the speed, the height was found to be a sigmoidal function of width, with the MD probes achieving lower height compared to the metal-coated and the DC tips with comparable k(Avg). This study expands the application of monolithic conductive polycrystalline diamond (PCD) probes with outstanding wear resistance to fine LAO lithography.

  9. Polycrystalline lead selenide: the resurgence of an old infrared detector

    NASA Astrophysics Data System (ADS)

    Vergara, G.; Montojo, M. T.; Torquemada, M. C.; Rodrigo, M. T.; Sánchez, F. J.; Gómez, L. J.; Almazán, R. M.; Verdú, M.; Rodríguez, P.; Villamayor, V.; Álvarez, M.; Diezhandino, J.; Plaza, J.; Catalán, I.

    2007-06-01

    The existing technology for uncooled MWIR photon detectors based on polycrystalline lead salts is stigmatized for being a 50-year-old technology. It has been traditionally relegated to single-element detectors and relatively small linear arrays due to the limitations imposed by its standard manufacture process based on a chemical bath deposition technique (CBD) developed more than 40 years ago. Recently, an innovative method for processing detectors, based on a vapour phase deposition (VPD) technique, has allowed manufacturing the first 2D array of polycrystalline PbSe with good electro optical characteristics. The new method of processing PbSe is an all silicon technology and it is compatible with standard CMOS circuitry. In addition to its affordability, VPD PbSe constitutes a perfect candidate to fill the existing gap in the photonic and uncooled IR imaging detectors sensitive to the MWIR photons. The perspectives opened are numerous and very important, converting the old PbSe detector in a serious alternative to others uncooled technologies in the low cost IR detection market. The number of potential applications is huge, some of them with high commercial impact such as personal IR imagers, enhanced vision systems for automotive applications and other not less important in the security/defence domain such as sensors for active protection systems (APS) or low cost seekers. Despite the fact, unanimously accepted, that uncooled will dominate the majority of the future IR detection applications, today, thermal detectors are the unique plausible alternative. There is plenty of room for photonic uncooled and complementary alternatives are needed. This work allocates polycrystalline PbSe in the current panorama of the uncooled IR detectors, underlining its potentiality in two areas of interest, i.e., very low cost imaging IR detectors and MWIR fast uncooled detectors for security and defence applications. The new method of processing again converts PbSe into an

  10. Microstructure and texture analyses of polycrystalline ice during hot torsion

    NASA Astrophysics Data System (ADS)

    Journaux, B.; Montagnat, M.; Gest, L.; Barou, F.; Chauve, T.

    2015-12-01

    Water ice Ih is a material with very high plastic anisotropy where deformation is mainly accommodated by dislocation glide on the (0001) plane. This anisotropy gives rise to strong strain incompatibilities between grains during deformation, and therefore impacts texture and microstructure evolution. Accurate understanding of ice mechanical properties is significant for several areas of research such as glaciology, planetary sciences, but also in geosciences and metallurgy as ice can be seen as a model material with easier experimental handling at near melting temperatures. In the present study, we used torsion experiments to study non-coaxial shear strain (γ), very common in natural environments, up to very high values of γ. Numerous studies determined microstructure and texture evolution in polycrystalline assemblage submitted to torsion (metallic alloys and geological materials) but a very limited number focused on polycrystalline ice. Full cylinders of randomly oriented polycrystalline ice (grain size ~ 1 mm) were placed in a torsion apparatus and deformed under ductile regime under constant imposed torque at 266K (0.97 Tf). Macroscopic shear was monitored using a LVDT device or a rotary encoder. Several torsion tests with maximal shear strain up to γmax = 1 were performed. Tangent and axial sections were analyzed ex-situ using Automatic Ice Texture Analyzer (AITA) and Electron BackScatter Diffraction (EBSD). We were able to confirm the previously observed bimodal preferred orientation of the basal slip plane. Macroscopic strain evolution γ(t) displays a weakening after γmax = 0.04 (ɛmax ≃ 2 %), due to the beginning of dynamic recrystallization (DRX) processes. EBSD data provide novel informations on the microstructure that suggest very efficient grain boundary migration processes. In particular, we were able to measure differences of intra-granular misorientations density between the two ODF maxima populations that can highlight the role of DRX

  11. Conductive polycrystalline diamond probes for local anodic oxidation lithography

    NASA Astrophysics Data System (ADS)

    Ulrich, A. J.; Radadia, A. D.

    2015-11-01

    This is the first report characterizing local anodic oxidation (LAO) lithography performed using conductive monolithic polycrystalline diamond (MD) and conductive polycrystalline diamond-coated (DC) tips and comparing it to the diamond-like carbon-coated and metal-coated silicon tips. The range and the rate of increase in the lithographic linewidth and height with tip bias (dw/dV and dh/dV) differed based on the tip material. The DC tips resulted in wider and taller lines and a higher dw/dV and dh/dV compared to metal-coated tips with a similar force constant (k Avg). The metal-coated and the DC tips with comparable k Avg showed comparable threshold voltages, whereas the MD tips with similar k Avg showed a higher threshold voltage. The MD tips exhibited less than half the height and nearly half the dw/dV and dh/dV obtained with the metal-coated tips with similar k Avg, thus also resulting in a smaller width at -10 V. The linewidths were found to be proportional to the inverse of the log of write speed (v) for all the tips; however, the proportionality constant varied with tip material; the DC tips had larger values, and the MD and the metal-coated tips had comparable values. When varying the speed, the height was found to be a sigmoidal function of width, with the MD probes achieving lower height compared to the metal-coated and the DC tips with comparable k Avg. This study expands the application of monolithic conductive polycrystalline diamond (PCD) probes with outstanding wear resistance to fine LAO lithography.

  12. Statistical thermodynamics of strain hardening in polycrystalline solids

    DOE PAGES

    Langer, James S.

    2015-09-18

    This paper starts with a systematic rederivation of the statistical thermodynamic equations of motion for dislocation-mediated plasticity proposed in 2010 by Langer, Bouchbinder, and Lookman. The paper then uses that theory to explain the anomalous rate-hardening behavior reported in 1988 by Follansbee and Kocks and to explore the relation between hardening rate and grain size reported in 1995 by Meyers et al. A central theme is the need for physics-based, nonequilibrium analyses in developing predictive theories of the strength of polycrystalline materials.

  13. Screen-Cage Ion Plating Of Silver On Polycrystalline Alumina

    NASA Technical Reports Server (NTRS)

    Spalvins, Talivaldis; Sliney, Harold E.; Deadmore, Daniel L.

    1995-01-01

    Screen-cage ion plating (SCIP) cost-effective technique offering high throwing power for deposition of adherent metal films on ceramic substrates. Applies silver films to complexly shaped substrates of polycrystalline alumina. Silver adheres tenaciously and reduces friction. SCIP holds promise for applying lubricating soft metallic films to high-temperature ceramic components of advanced combustion engines. Other potential uses include coating substrates with metal for protection against corrosion, depositing electrical conductors on dielectric substrates, making optically reflective or electrically or thermally conductive surface layers, and applying decorative metal coats to ceramic trophies or sculptures.

  14. Remobilization in the cratonic lithosphere recorded in polycrystalline diamond

    PubMed

    Jacob; Viljoen; Grassineau; Jagoutz

    2000-08-18

    Polycrystalline diamonds (framesites) from the Venetia kimberlite in South Africa contain silicate minerals whose isotopic and trace element characteristics document remobilization of older carbon and silicate components to form the framesites shortly before kimberlite eruption. Chemical variations within the garnets correlate with carbon isotopes in the diamonds, indicating contemporaneous formation. Trace element, radiogenic, and stable isotope variations can be explained by the interaction of eclogites with a carbonatitic melt, derived by remobilization of material that had been stored for a considerable time in the lithosphere. These results indicate more recent formation of diamonds from older materials within the cratonic lithosphere.

  15. Polycrystalline silicon optical fibers with atomically smooth surfaces.

    PubMed

    Healy, Noel; Lagonigro, Laura; Sparks, Justin R; Boden, Stuart; Sazio, Pier J A; Badding, John V; Peacock, Anna C

    2011-07-01

    We investigate the surface roughness of polycrystalline silicon core optical fibers fabricated using a high-pressure chemical deposition technique. By measuring the optical transmission of two fibers with different core sizes, we will show that scattering from the core-cladding interface has a negligible effect on the losses. A Zemetrics ZeScope three-dimensional optical profiler has been used to directly measure the surface of the core material, confirming a roughness of only ~0.1 nm. The ability to fabricate low-loss polysilicon optical fibers with ultrasmooth cores scalable to submicrometer dimensions should establish their use in a range of nonlinear optical applications.

  16. Temperature dependence of magnetic anisotropy of textured polycrystalline materials

    NASA Astrophysics Data System (ADS)

    Apostolov, A.; Masheva, V.; Mikhov, M.

    1984-09-01

    A method for the determination of the temperature dependence of several magnetic anisotropy constants (for example K1( T), K2( T) etc.) for a cubic ferromagnetic is proposed. The measurements were carried out on textured polycrystalline samples. The effective constants of the magnetic anisotropy for low-carbon cold rolled steels were determined by the torque curves for rotation about the perpendicular axis of the rolling plane for several temperatures. The K1( T) relative temperature dependence for Fe is obtained. The temperature, above which material structural changes appear is found experimentally.

  17. Scattering of ultrasound by minority phases in polycrystalline metals

    NASA Astrophysics Data System (ADS)

    Sayers, C. M.

    1984-01-01

    The scattering of ultrasound by minority phases in polycrystalline metals is discussed. For discrete inclusions, the scattering theory of Ying and Truell describes the attenuation of longitudinal waves. This is demonstrated by comparison with experiments of Papadakis for graphite particles in modular cast iron. To treat the scattering by a second phase formed by segregation at a grain boundary, the scattering by a spherical shell with density and elastic constants different from those of the surrounding medium is developed. Reflection of ultrasound at this boundary is found to enhance the attenuation at low frequencies. Application is made to the scattering by manganese sulphide in free machining steel.

  18. Valley Filtering and Electronic Optics Using Polycrystalline Graphene

    NASA Astrophysics Data System (ADS)

    Nguyen, V. Hung; Dechamps, S.; Dollfus, P.; Charlier, J.-C.

    2016-12-01

    In this Letter, both the manipulation of valley-polarized currents and the optical-like behaviors of Dirac fermions are theoretically explored in polycrystalline graphene. When strain is applied, the misorientation between two graphene domains separated by a grain boundary can result in a mismatch of their electronic structures. Such a discrepancy manifests itself in a strong breaking of the inversion symmetry, leading to perfect valley polarization in a wide range of transmission directions. In addition, these graphene domains act as different media for electron waves, offering the possibility to modulate and obtain negative refraction indexes.

  19. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    NASA Technical Reports Server (NTRS)

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  20. Statistical thermodynamics of strain hardening in polycrystalline solids.

    PubMed

    Langer, J S

    2015-09-01

    This paper starts with a systematic rederivation of the statistical thermodynamic equations of motion for dislocation-mediated plasticity proposed in 2010 by Langer, Bouchbinder, and Lookman [Acta Mat. 58, 3718 (2010)ACMAFD1359-645410.1016/j.actamat.2010.03.009]. It then uses that theory to explain the anomalous rate-hardening behavior reported in 1988 by Follansbee and Kocks and to explore the relation between hardening rate and grain size reported in 1995 by Meyers et al. A central theme is the need for physics-based, nonequilibrium analyses in developing predictive theories of the strength of polycrystalline materials.

  1. Rotary Ultrasonic Machining of Poly-Crystalline Cubic Boron Nitride

    NASA Astrophysics Data System (ADS)

    Kuruc, Marcel; Peterka, Jozef

    2014-12-01

    Poly-crystalline cubic boron nitride (PCBN) is one of the hardest material. Generally, so hard materials could not be machined by conventional machining methods. Therefore, for this purpose, advanced machining methods have been designed. Rotary ultrasonic machining (RUM) is included among them. RUM is based on abrasive removing mechanism of ultrasonic vibrating diamond particles, which are bonded on active part of rotating tool. It is suitable especially for machining hard and brittle materials (such as glass and ceramics). This contribution investigates this advanced machining method during machining of PCBN.

  2. Electron and Hole Trapping in Polycrystalline Metal Oxide Materials

    SciTech Connect

    Mckenna, Keith P.; Shluger, Alexander L.

    2011-07-08

    Electron and hole trapping by grain boundaries and dislocations in polycrystalline materials is important for wide ranging technological applications such as solar cells, microelectronics, photo-catalysts and rechargeable batteries. In this article, we first give an overview of the computational and methodological challenges involved in modelling such effects. This is followed by a discussion of two recent studies we have made on electron/hole trapping in wide gap insulators. The results suggest that such effects can be important for many applications which we discuss. These computationally demanding calculations have made extensive use of both the HPCx and HECToR services.

  3. Polycrystalline diamond based detector for Z-pinch plasma diagnosis.

    PubMed

    Liu, Linyue; Ouyang, Xiaoping; Zhao, Jizhen; Chen, Liang; Wang, Lan

    2010-08-01

    A detector setup based on polycrystalline chemical-vapor-deposition diamond film is developed with great characteristics: low dark current (lower than 60 pA within 3 V/mum), fast pulsed response time (rise time: 2-3 ns), flat spectral response (3-5 keV), easy acquisition, low cost, and relative large sensitive area. The characterizing data on Qiangguang-I accelerator show that this detector can satisfy the practical requirements in Z-pinch plasma diagnosis very well, which offers a promising prototype for the x-ray detection in Z-pinch diagnosis.

  4. Screen-Cage Ion Plating Of Silver On Polycrystalline Alumina

    NASA Technical Reports Server (NTRS)

    Spalvins, Talivaldis; Sliney, Harold E.; Deadmore, Daniel L.

    1995-01-01

    Screen-cage ion plating (SCIP) cost-effective technique offering high throwing power for deposition of adherent metal films on ceramic substrates. Applies silver films to complexly shaped substrates of polycrystalline alumina. Silver adheres tenaciously and reduces friction. SCIP holds promise for applying lubricating soft metallic films to high-temperature ceramic components of advanced combustion engines. Other potential uses include coating substrates with metal for protection against corrosion, depositing electrical conductors on dielectric substrates, making optically reflective or electrically or thermally conductive surface layers, and applying decorative metal coats to ceramic trophies or sculptures.

  5. An acoustic emission study of plastic deformation in polycrystalline aluminium

    NASA Technical Reports Server (NTRS)

    Bill, R. C.; Frederick, J. R.; Felbeck, D. K.

    1979-01-01

    Acoustic emission experiments were performed on polycrystalline and single crystal 99.99% aluminum while undergoing tensile deformation. It was found that acoustic emission counts as a function of grain size showed a maximum value at a particular grain size. Furthermore, the slip area associated with this particular grain size corresponded to the threshold level of detectability of single dislocation slip events. The rate of decline in acoustic emission activity as grain size is increased beyond the peak value suggests that grain boundary associated dislocation sources are giving rise to the bulk of the detected acoustic emissions.

  6. PDC (polycrystalline diamond compact) bit research at Sandia National Laboratories

    SciTech Connect

    Finger, J.T.; Glowka, D.A.

    1989-06-01

    From the beginning of the geothermal development program, Sandia has performed and supported research into polycrystalline diamond compact (PDC) bits. These bits are attractive because they are intrinsically efficient in their cutting action (shearing, rather than crushing) and they have no moving parts (eliminating the problems of high-temperature lubricants, bearings, and seals.) This report is a summary description of the analytical and experimental work done by Sandia and our contractors. It describes analysis and laboratory tests of individual cutters and complete bits, as well as full-scale field tests of prototype and commercial bits. The report includes a bibliography of documents giving more detailed information on these topics. 26 refs.

  7. Ultrafast carrier dynamics in polycrystalline bismuth telluride nanofilm

    SciTech Connect

    Jia, Lin; Ma, Weigang; Zhang, Xing

    2014-06-16

    In this study, the dynamics of energy carriers in polycrystalline bismuth telluride nanofilm are investigated by the ultrafast pump-probe method. The energy relaxation processes are quantitatively analyzed by using the numerical fitting models. The extracted hot carrier relaxation times of photon excitation, thermalization, and diffusion are around sub-picosecond. The initial reflectivity recovery is found to be dominantly determined by the carrier diffusion, electron-phonon coupling, and photo-generated carriers trapping processes. High-frequency and low-frequency oscillations are both observed and attributed to coherent optical phonons and coherent acoustic phonons, respectively.

  8. The Effect of Crystal Orientation on Growth on Polycrystalline TNT,

    DTIC Science & Technology

    1980-05-01

    satisfactory mechanism to account for its occurrence [1,2]. Investigations carried out at Materials Research Laboratories have confirmed that growth of creamed...AD0A096 591 MATERIALS RESEARCH LABS ASCOT VALE (AUSTRALIA) F/G 20/ 2 THE EFFECT OF CRYSTAL ORIENTATION ON GROWTH ON POLYCRYSTALLINE -ETC(L MAT 80 W S...WILSON UNCLASSIFIED MRL-R775 N N R.-R-775 A/ R-002-156 DEPARTMENT OF DEFENCE DEFENCE SCIENCE AND TECHNOLOGY ORGANISATION MATERIALS RESEARCH

  9. Machining graphite composites with polycrystalline diamond end mills

    NASA Astrophysics Data System (ADS)

    Kohkonen, Kent E.; Anderson, Scott; Strong, A. B.

    One area of focus in developing light-strong materials has been the development of graphite/epoxy composites. The graphite/epoxy materials have created challenges in the area of fabrication and machining. The research objective was to determine if cutting tool material and style of cutting edge showed any significant differences in tool life. The cutting tool materials and cutter styles included helical carbide-end mills and straight and helical polycrystalline diamond-end mill cutters. The experimental design was developed using a fractional factorial design running twelve tests. Results were taken from cutting tool flank edge wear, composite part surface finish, and visual delamination of the part.

  10. Josephson tunnel junctions with chemically vapor deposited polycrystalline germanium barriers

    SciTech Connect

    Kroger, H.; Jillie, D.W.; Smith, L.N.; Phaneuf, L.E.; Potter, C.N.; Shaw, D.M.; Cukauskas, E.J.; Nisenoff, M.

    1984-03-01

    High quality Josephson tunnel junctions have been fabricated whose tunneling barrier is polycrystalline germanium chemically vapor deposited on a NbN base electrode and covered by a Nb counterelectrode. These junctions have excellent characteristics for device applications: values of V/sub m/ (the product of the critical current and the subgap resistance measured at 2 mV and 4.2 K) ranging between 35--48 mV, ideal threshold curves, a steep current rise at the gap voltage, and Josephson current densities from 100 to 1100 A/cm/sup 2/.

  11. Emission of nuclear quadrupole resonance from polycrystalline hexamethylenetetramine.

    PubMed

    Ota, G; Itozaki, H

    2008-03-01

    The angular dependence of the nuclear quadrupole resonance (NQR) signal intensity emitted from polycrystalline hexamethylenetetramine has been analytically investigated for all directions for non-contact detection of chemicals by nuclear quadrupole resonance. The field pattern of the NQR signal from a column sample was measured. The emitted patterns were the same as that from a united single magnetic dipole, which fitted well to the estimation based on quadrupole principle axis system. This result is helpful to design an antenna for NQR remote detection.

  12. Penetration and lateral diffusion characteristics of polycrystalline graphene barriers.

    PubMed

    Yoon, Taeshik; Mun, Jeong Hun; Cho, Byung Jin; Kim, Taek-Soo

    2014-01-07

    We report penetration and lateral diffusion behavior of environmental molecules on synthesized polycrystalline graphene. Penetration occurs through graphene grain boundaries resulting in local oxidation. However, when the penetrated molecules diffuse laterally, the oxidation region will expand. Therefore, we measured the lateral diffusion rate along the graphene-copper interface for the first time by the environment-assisted crack growth test. It is clearly shown that the lateral diffusion is suppressed due to the high van der Waals interaction. Finally, we employed bilayer graphene for a perfect diffusion barrier facilitated by decreased defect density and increased lateral diffusion path.

  13. Record low temperature Mo doped V2O5 thermochromic thin films for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Nazemiyan, M.; Jalili, Y. S.

    2013-11-01

    Thermochromic properties of polycrystalline molybdenum doped vanadium pentoxide thin films grown by the spray pyrolysis technique were investigated. Tetragonal thin film structures of this system are grown. The transmittance spectral analysis with temperature indicates a record semiconductor-metal transition temperature of < 50oC. This critical temperature is approximately 1/3 to 1/6 of magnitude expected for V2O5 thin films. The resistance of the thermochromic thin film also underwent a transition or phase change as expected, a reduction from more than few mega ohms to less than kilo ohm regime indicating potential applications in optoelectronics.

  14. Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting

    NASA Astrophysics Data System (ADS)

    Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle; Bidault, Sebastien; Bonod, Nicolas; Abbarchi, Marco

    2016-01-01

    We report the fabrication of Si-based dielectric Mie resonators via a low cost process based on solid-state dewetting of ultra-thin amorphous Si on SiO2. We investigate the dewetting dynamics of a few nanometer sized layers annealed at high temperature to form submicrometric Si-particles. Morphological and structural characterization reveal the polycrystalline nature of the semiconductor matrix as well as rather irregular morphologies of the dewetted islands. Optical dark field imaging and spectroscopy measurements of the single islands reveal pronounced resonant scattering at visible frequencies. The linewidth of the low-order modes can be ~20 nm in full width at half maximum, leading to a quality factor Q exceeding 25. These values reach the state-of-the-art ones obtained for monocrystalline Mie resonators. The simplicity of the dewetting process and its cost-effectiveness opens the route to exploiting it over large scales for applications in silicon-based photonics.

  15. Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting.

    PubMed

    Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle; Bidault, Sebastien; Bonod, Nicolas; Abbarchi, Marco

    2016-02-07

    We report the fabrication of Si-based dielectric Mie resonators via a low cost process based on solid-state dewetting of ultra-thin amorphous Si on SiO2. We investigate the dewetting dynamics of a few nanometer sized layers annealed at high temperature to form submicrometric Si-particles. Morphological and structural characterization reveal the polycrystalline nature of the semiconductor matrix as well as rather irregular morphologies of the dewetted islands. Optical dark field imaging and spectroscopy measurements of the single islands reveal pronounced resonant scattering at visible frequencies. The linewidth of the low-order modes can be ∼20 nm in full width at half maximum, leading to a quality factor Q exceeding 25. These values reach the state-of-the-art ones obtained for monocrystalline Mie resonators. The simplicity of the dewetting process and its cost-effectiveness opens the route to exploiting it over large scales for applications in silicon-based photonics.

  16. Enhanced broadband and omni-directional performance of polycrystalline Si solar cells by using discrete multilayer antireflection coatings.

    PubMed

    Oh, Seung Jae; Chhajed, Sameer; Poxson, David J; Cho, Jaehee; Schubert, E Fred; Tark, Sung Ju; Kim, Donghwan; Kim, Jong Kyu

    2013-01-14

    The performance enhancement of polycrystalline Si solar cells by using an optimized discrete multilayer anti-reflection (AR) coating with broadband and omni-directional characteristics is presented. Discrete multilayer AR coatings are optimized by a genetic algorithm, and experimentally demonstrated by refractive-index tunable SiO₂ nano-helix arrays and co-sputtered (SiO₂)x(TiO₂)₁₋x thin film layers. The optimized multilayer AR coating shows a reduced total reflection, leading to the high incident-photon-to-electron conversion efficiency over a correspondingly wide range of wavelengths and incident angles, offering a very promising way to harvest more solar energy by virtually any type of solar cells for a longer time of a day.

  17. RF Surface Impedance Measurement of Polycrystalline and Large Grain Nb Disk Sample at 7.5 GHz

    SciTech Connect

    Xiao, Binping; Geng, Rongli; Kelley, Michael J.; Marhauser, Frank; Phillips, H. Larry; Reece, Charles E.; Wang, Haipeng

    2009-11-01

    A Surface Impedance Characterization (SIC) system has been proposed at the 2005 SRF workshop and recently updated as detailed at the 2009 PAC conference. Currently the SIC system can measure samples in a temperature range from 2K to 20K exposed to an RF magnetic flux density of less than 3mT. We report on new results of a BCP etched large grain Nb sample measured with this system as compared with previous results of a BCP etched polycrystalline Nb sample. The design of an upgraded SIC system for use at higher magnetic flux densities is on the way to more efficiently investigate correlations between local material characteristics and associated SRF properties, both for preparation studies of bulk niobium and also new thin film SRF developments.

  18. Charged grain boundaries reduce the open-circuit voltage of polycrystalline solar cells—An analytical description

    NASA Astrophysics Data System (ADS)

    Gaury, Benoit; Haney, Paul M.

    2016-12-01

    Analytical expressions are presented for the dark current-voltage relation J(V) of a pn+ junction with positively charged columnar grain boundaries with high defect density. These expressions apply to non-depleted grains with sufficiently high bulk hole mobilities. The accuracy of the formulas is verified by direct comparison to numerical simulations. Numerical simulations further show that the dark J(V) can be used to determine the open-circuit potential Voc of an illuminated junction for a given short-circuit current density Jsc . A precise relation between the grain boundary properties and Voc is provided, advancing the understanding of the influence of grain boundaries on the efficiency of thin film polycrystalline photovoltaics like CdTe and Cu(In,Ga)Se2 .

  19. Relaxation in photo-induced conductivity of polycrystalline BiFeO3 film

    NASA Astrophysics Data System (ADS)

    Peng, Zengwei; Liu, Baoting

    2015-08-01

    Polycrystalline BiFeO3 (BFO) film is deposited on Pt(1 1 1)/Ti/SiO2/Si(0 0 1) substrate via magnetron sputtering. Integrated Pt/SrRuO3 (SRO) are used to be top electrode to produce the Pt/SRO/BFO/Pt thin film capacitor. The remanent polarization is 59.5, 69.3, 77 and 89.8 μC/cm2 measured at 22.5, 25, 27.5 and 30 V, respectively. The photoconductivity is reported in BFO film under the illumination by the 5 mW/cm2 purple light of 404 nm. It is found that the leakage current density in purple light displays the tendency of decline with the increased illumination times, which can be explained by the recombination and capture of the photo-induced charges by the ionized vacancies. The relaxation time for the illuminated leakage current density reaching the steady state is 210 and 570 s at positive and negative bias, respectively. The obtained large relaxation time at negative bias is considered to be that negative bias is in the same direction as the SRO/BFO interface field.

  20. Deposition of polycrystalline and nanocrystalline diamond on graphite: effects of surface pre-treatments

    NASA Astrophysics Data System (ADS)

    Villalpando, I.; John, P.; Porro, S.; Wilson, J. I. B.

    2017-03-01

    The growth of hydrogenated sp3-phase of diamond on the sp2-phase of graphite by Microwave Plasma Enhanced Chemical Vapour Deposition (MPECVD) is a challenge, primarily because hydrogen etches graphite much faster than the growth rate of diamond. To enhance nucleation of diamond on graphite, we used a plethora of techniques such as plasma etching, ion bombardment, manual scratching, and scratching by ultrasonic agitation. Nanocrystalline and polycrystalline diamond thin-films were grown by MPECVD on the surface of pre-treated or pristine graphite using 1.5, 3.0, and 3.6 kW microwave power. Samples were characterised by Scanning Electron Microscopy, Raman Spectroscopy, and X-ray Photoelectron Spectroscopy. Species in the gas phase during film deposition were monitored by Optical Emission Spectroscopy. We have found that the surface area covered and the morphology of the diamond films are dependent on the surface pre-treatment. The crystallite size of the films depends on the microwave power used during MPECVD growth. The results of this study establish the protocols for diamond deposition by MPECVD on graphite substrates with a desired crystalline quality based on the pre-treatment of the substrate and the microwave power used during MPECVD. These results are important to modern applications, such as plasma facing materials, in which diamond has shown outstanding performance in contrast to that of graphite.