The relation of the yield stress of high-pressure anvils to the pressure attained at yielding and the ultimate attainable pressure

NASA Technical Reports Server (NTRS)

Panda, P. C.; Ruoff, A. L.

1979-01-01

A sensitive microprofilometer was used to determine the onset of yielding in the anvils of a supported opposed anvil device for the case of 3% cobalt-cemented tungsten carbide as the anvil material. In addition, it is shown how the commencement of yielding in boron carbide pistons, the yield strength being known, can be used to obtain the transition pressure to a conducting phase in gallium phosphide. The transition pressures of bismuth and gallium phosphide are obtained and it is found that these transitions are extremely close to the maximum attainable pressure in, respectively, a maraging steel and a 3% cobalt-cemented tungsten carbide.

Deposition Of Cubic BN On Diamond Interlayers

NASA Technical Reports Server (NTRS)

Ong, Tiong P.; Shing, Yuh-Han

1994-01-01

Thin films of polycrystalline, pure, cubic boron nitride (c-BN) formed on various substrates, according to proposal, by chemical vapor deposition onto interlayers of polycrystalline diamond. Substrate materials include metals, semiconductors, and insulators. Typical substrates include metal-cutting tools: polycrystalline c-BN coats advantageous for cutting ferrous materials and for use in highly oxidizing environments-applications in which diamond coats tend to dissolve in iron or be oxidized, respectively.

Selective gas adsorption and I-V response of monolayer boron phosphide introduced by dopants: A first-principle study

NASA Astrophysics Data System (ADS)

Cheng, Yongfa; Meng, Ruishen; Tan, Chunjian; Chen, Xianping; Xiao, Jing

2018-01-01

Two-dimensional (2D) materials have gained tremendous research interests for gas sensing applications because of their ultrahigh theoretical specific surface areas and unique electronic properties. Here, we investigate the adsorption of CO, SO2, NH3, O2, NO and NO2 gas molecules on pure and doped boron phosphide (BP) systems using first-principles calculations to exploit their potential in gas sensing. Our results predict that all six gas molecules show stronger adsorption interactions on impurities-doped BP over the pristine monolayer BP. Al-doped BP shows the highest sensitivity to all gas molecules, but N-doped BP is more suitable as a sensing material for SO2, NO and NO2 due to the feasibility of desorption. We further calculated the current-voltage (I-V) relation by mean of nonequilibrium Green's function (NEGF) formalism. The I-V curves indicate that the electronic properties of the doping systems change significantly with gas adsorption by studying the nonparamagnetic molecules NH3 and the paramagnetic molecules NO, which can be more likely to be measured experimentally compared to graphene and phosphorene. This work explores the possibility of BP as a superior sensor through introducing the appropriate dopants.

Low pressure growth of cubic boron nitride films

NASA Technical Reports Server (NTRS)

Ong, Tiong P. (Inventor); Shing, Yuh-Han (Inventor)

1997-01-01

A method for forming thin films of cubic boron nitride on substrates at low pressures and temperatures. A substrate is first coated with polycrystalline diamond to provide a uniform surface upon which cubic boron nitride can be deposited by chemical vapor deposition. The cubic boron nitride film is useful as a substitute for diamond coatings for a variety of applications in which diamond is not suitable. any tetragonal or hexagonal boron nitride. The cubic boron nitride produced in accordance with the preceding example is particularly well-suited for use as a coating for ultra hard tool bits and abrasives, especially those intended to use in cutting or otherwise fabricating iron.

Introducing Overlapping Grain Boundaries in Chemical Vapor Deposited Hexagonal Boron Nitride Monolayer Films

PubMed Central

2017-01-01

We demonstrate the growth of overlapping grain boundaries in continuous, polycrystalline hexagonal boron nitride (h-BN) monolayer films via scalable catalytic chemical vapor deposition. Unlike the commonly reported atomically stitched grain boundaries, these overlapping grain boundaries do not consist of defect lines within the monolayer films but are composed of self-sealing bilayer regions of limited width. We characterize this overlapping h-BN grain boundary structure in detail by complementary (scanning) transmission electron microscopy techniques and propose a catalytic growth mechanism linked to the subsurface/bulk of the process catalyst and its boron and nitrogen solubilities. Our data suggest that the overlapping grain boundaries are comparatively resilient against deleterious pinhole formation associated with grain boundary defect lines and thus may reduce detrimental breakdown effects when polycrystalline h-BN monolayer films are used as ultrathin dielectrics, barrier layers, or separation membranes. PMID:28410557

Elastic, magnetic and electronic properties of iridium phosphide Ir 2P

DOE PAGES

Wang, Pei; Wang, Yonggang; Wang, Liping; ...

2016-02-24

Cubic (space group: Fm3¯m) iridium phosphide, Ir 2P, has been synthesized at high pressure and high temperature. Angle-dispersive synchrotron X-ray diffraction measurements on Ir 2P powder using a diamond-anvil cell at room temperature and high pressures (up to 40.6 GPa) yielded a bulk modulus of B 0 = 306(6) GPa and its pressure derivative B 0'= 6.4(5). Such a high bulk modulus attributed to the short and strongly covalent Ir-P bonds as revealed by first – principles calculations and three-dimensionally distributed [IrP 4] tetrahedron network. Indentation testing on a well–sintered polycrystalline sample yielded the hardness of 11.8(4) GPa. Relatively lowmore » shear modulus of ~64 GPa from theoretical calculations suggests a complicated overall bonding in Ir 2P with metallic, ionic, and covalent characteristics. Additionally, a spin glass behavior is indicated by magnetic susceptibility measurements.« less

Synthesis of Few-Layer, Large Area Hexagonal-Boron Nitride by Pulsed Laser Deposition (POSTPRINT)

DTIC Science & Technology

2014-09-01

methods. Analysis of the as-deposited films reveals epitaxial- like growth on the nearly lattice matched HOPG substrate, resulting in a polycrystalline ɦ...epitaxial like growth on the nearly lattice matched HOPG substrate, resulting in a polycrystalline h BN film, and amorphous BN (a BN) on the sapphire...BNxOy observed as a shoulder on the B 1s spectra is seen in other polycrystalline h BN films [16], and is most likely due to exposure to ambient

Priority compositions of boron carbide crystals obtained by self-propagating high-temperature synthesis

NASA Astrophysics Data System (ADS)

Ponomarev, V. I.; Konovalikhin, S. V.; Kovalev, I. D.; Vershinnikov, V. I.

2015-09-01

Splitting of reflections from boron carbide has been found for the first time by an X-ray diffraction study of polycrystalline mixture of boron carbide В15- х С х , (1.5 ≤ x ≤ 3) and its magnesium derivative C4B25Mg1.42. An analysis of reflection profiles shows that this splitting is due to the presence of boron carbide phases of different compositions in the sample, which are formed during crystal growth. The composition changes from В12.9С2.1 to В12.4С2.6.

Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metaferia, Wondwosen; Sun, Yan-Ting, E-mail: yasun@kth.se; Lourdudoss, Sebastian

2014-07-21

Polycrystalline InP was grown on Si(001) and Si(111) substrates by using indium (In) metal as a starting material in hydride vapor phase epitaxy (HVPE) reactor. In metal was deposited on silicon substrates by thermal evaporation technique. The deposited In resulted in islands of different size and was found to be polycrystalline in nature. Different growth experiments of growing InP were performed, and the growth mechanism was investigated. Atomic force microscopy and scanning electron microscopy for morphological investigation, Scanning Auger microscopy for surface and compositional analyses, powder X-ray diffraction for crystallinity, and micro photoluminescence for optical quality assessment were conducted. Itmore » is shown that the growth starts first by phosphidisation of the In islands to InP followed by subsequent selective deposition of InP in HVPE regardless of the Si substrate orientation. Polycrystalline InP of large grain size is achieved and the growth rate as high as 21 μm/h is obtained on both substrates. Sulfur doping of the polycrystalline InP was investigated by growing alternating layers of sulfur doped and unintentionally doped InP for equal interval of time. These layers could be delineated by stain etching showing that enough amount of sulfur can be incorporated. Grains of large lateral dimension up to 3 μm polycrystalline InP on Si with good morphological and optical quality is obtained. The process is generic and it can also be applied for the growth of other polycrystalline III–V semiconductor layers on low cost and flexible substrates for solar cell applications.« less

Note: Novel diamond anvil cell for electrical measurements using boron-doped metallic diamond electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsumoto, R.; Sasama, Y.; Yamaguchi, T.

2016-07-15

A novel diamond anvil cell suitable for electrical transport measurements under high pressure has been developed. A boron-doped metallic diamond film was deposited as an electrode on a nano-polycrystalline diamond anvil using a microwave plasma-assisted chemical vapor deposition technique combined with electron beam lithography. The maximum pressure that can be achieved by this assembly is above 30 GPa. We report electrical transport measurements of Pb up to 8 GPa. The boron-doped metallic diamond electrodes showed no signs of degradation after repeated compression.

Method for the preparation of inorganic single crystal and polycrystalline electronic materials

NASA Technical Reports Server (NTRS)

Groves, W. O. (Inventor)

1969-01-01

Large area, semiconductor crystals selected from group 3-5 compounds and alloys are provided for semiconductor device fabrication by the use of a selective etching operation which completely removes the substrate on which the desired crystal was deposited. The substrate, selected from the same group as the single crystal, has a higher solution rate than the epitaxial single crystal which is essentially unaffected by the etching solution. The preparation of gallium phosphide single crystals using a gallium arsenide substrate and a concentrated nitric acid etching solution is described.

Boron nitride microfibers grown by plasma-assisted laser chemical vapor deposition without a metal catalyst

NASA Astrophysics Data System (ADS)

Komatsu, Shojiro; Kazami, Daisuke; Tanaka, Hironori; Shimizu, Yoshiki; Moriyoshi, Yusuke; Shiratani, Masaharu; Okada, Katsuyuki

2006-04-01

Boron nitride fibers were found to grow on polycrystalline nickel and Si (100) substrates by plasma-assisted laser chemical vapor deposition from B2H6+NH3 using an excimer laser at 193nm. Their diameter was typically a few hundreds of nanometers, while the length was a few tens of micrometers. They were stoichiometric or boron-rich BN in chemical composition. When the substrate was rotated during deposition, spiral fibers were found to grow. We conclude that they grew with the help of laser light by other than the vapor - liquid - solid mechanism.

Effect of multilayer structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide.

PubMed

Chen, Xianping; Tan, Chunjian; Yang, Qun; Meng, Ruishen; Liang, Qiuhua; Jiang, Junke; Sun, Xiang; Yang, D Q; Ren, Tianling

2016-06-28

Development of nanoelectronics requires two-dimensional (2D) systems with both direct-bandgap and tunable electronic properties as they act in response to the external electric field (E-field). Here, we present a detailed theoretical investigation to predict the effect of atomic structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide (BP). We demonstrate that the splitting of bands and bandgap of BP depends on the number of layers and the stacking order. The values for the bandgap show a monotonically decreasing relationship with increasing layer number. We also show that AB-stacking BP has a direct-bandgap, while ABA-stacking BP has an indirect-bandgap when the number of layers n > 2. In addition, for a bilayer and a trilayer, the bandgap increases (decreases) as the electric field increases along the positive direction of the external electric field (E-field) (negative direction). In the case of four-layer BP, the bandgap exhibits a nonlinearly decreasing behavior as the increase in the electric field is independent of the electric field direction. The tunable mechanism of the bandgap can be attributed to a giant Stark effect. Interestingly, the investigation also shows that a semiconductor-to-metal transition may occur for the four-layer case or more layers beyond the critical electric field. Our findings may inspire more efforts in fabricating new nanoelectronics devices based on few-layer BP.

Continuous method of producing silicon carbide fibers

NASA Technical Reports Server (NTRS)

Barnard, Thomas Duncan (Inventor); Nguyen, Kimmai Thi (Inventor); Rabe, James Alan (Inventor)

1999-01-01

This invention pertains to a method for production of polycrystalline ceramic fibers from silicon oxycarbide (SiCO) ceramic fibers wherein the method comprises heating an amorphous ceramic fiber containing silicon and carbon in an inert environment comprising a boron oxide and carbon monoxide at a temperature sufficient to convert the amorphous ceramic fiber to a polycrystalline ceramic fiber. By having carbon monoxide present during the heating of the ceramic fiber, it is possible to achieve higher production rates on a continuous process.

Effects of the substitution of gallium with boron on the physical and mechanical properties of Ni-Mn-Ga shape memory alloys

NASA Astrophysics Data System (ADS)

Aydogdu, Yildirim; Turabi, Ali Sadi; Kok, Mediha; Aydogdu, Ayse; Tobe, Hirobumi; Karaca, Haluk Ersin

2014-12-01

The effects of the substitution of gallium with boron on the physical, mechanical and magnetic shape memory properties of Ni51Mn28.5Ga20.5- xBx (at.%) ( x = 0, 1, 2, 3) polycrystalline alloys are investigated. It has been found that transformation temperatures are decreasing while hardness is increasing with boron addition. B-doping of NiMnGa alloys results in the formation of a second phase that increases its ductility and strength in compression. Moreover, saturation magnetization of austenite is decreasing, while Curie temperature of austenite is increasing with B-doping.

Hydride CVD Hetero-epitaxy of B 12P 2 on 4H-SiC

DOE PAGES

Frye, C. D.; Saw, C. K.; Padavala, Balabalaji; ...

2016-11-27

Icosahedral boron phosphide (B 12P 2) is a wide bandgap semiconductor (3.35 eV) that has been reported to “self-heal” from high-energy electron bombardment, making it attractive for potential use in radioisotope batteries, radiation detection, or in electronics in high radiation environments. Our study focused on improving B 12P 2 hetero-epitaxial films by growing on 4H-SiC substrates over the temperature range of 1250–1450 °C using B 2H 6 and PH 3 precursors in a H 2 carrier gas. Furthermore, XRD scans and Laue transmission photographs revealed that the epitaxial relationship was (0001)<11more » $$\\bar{2}$$0> B12P2|| (0001)<11$$\\bar{2}$$0> 4H-SiC. The film morphology and crystallinity were investigated as a function of growth temperature and growth time. At 1250 °C, films tended to form rough, polycrystalline layers, but at 1300 and 1350 °C, films were continuous and comparatively smooth (R RMS≤7 nm). At 1400 or 1450 °C, the films grew in islands that coalesced as the films became thicker. Using XRD rocking curves to evaluate the crystal quality, 1300 °C was the optimum growth temperature tested. Finally, at 1300 °C, the rocking curve FWHM decreased with increasing film thickness from 1494 arcsec for a 1.1 μm thick film to 954 arcsec for a 2.7 µm thick film, suggesting a reduction in defects with thickness.« less

Hydride CVD Hetero-epitaxy of B 12P 2 on 4H-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frye, C. D.; Saw, C. K.; Padavala, Balabalaji

Icosahedral boron phosphide (B 12P 2) is a wide bandgap semiconductor (3.35 eV) that has been reported to “self-heal” from high-energy electron bombardment, making it attractive for potential use in radioisotope batteries, radiation detection, or in electronics in high radiation environments. Our study focused on improving B 12P 2 hetero-epitaxial films by growing on 4H-SiC substrates over the temperature range of 1250–1450 °C using B 2H 6 and PH 3 precursors in a H 2 carrier gas. Furthermore, XRD scans and Laue transmission photographs revealed that the epitaxial relationship was (0001)<11more » $$\\bar{2}$$0> B12P2|| (0001)<11$$\\bar{2}$$0> 4H-SiC. The film morphology and crystallinity were investigated as a function of growth temperature and growth time. At 1250 °C, films tended to form rough, polycrystalline layers, but at 1300 and 1350 °C, films were continuous and comparatively smooth (R RMS≤7 nm). At 1400 or 1450 °C, the films grew in islands that coalesced as the films became thicker. Using XRD rocking curves to evaluate the crystal quality, 1300 °C was the optimum growth temperature tested. Finally, at 1300 °C, the rocking curve FWHM decreased with increasing film thickness from 1494 arcsec for a 1.1 μm thick film to 954 arcsec for a 2.7 µm thick film, suggesting a reduction in defects with thickness.« less

Matrix Transformation in Boron Containing High-Temperature Co-Re-Cr Alloys

NASA Astrophysics Data System (ADS)

Strunz, Pavel; Mukherji, Debashis; Beran, Přemysl; Gilles, Ralph; Karge, Lukas; Hofmann, Michael; Hoelzel, Markus; Rösler, Joachim; Farkas, Gergely

2018-03-01

An addition of boron largely increases the ductility in polycrystalline high-temperature Co-Re alloys. Therefore, the effect of boron on the alloy structural characteristics is of high importance for the stability of the matrix at operational temperatures. Volume fractions of ɛ (hexagonal close-packed—hcp), γ (face-centered cubic—fcc) and σ (Cr2Re3 type) phases were measured at ambient and high temperatures (up to 1500 °C) for a boron-containing Co-17Re-23Cr alloy using neutron diffraction. The matrix phase undergoes an allotropic transformation from ɛ to γ structure at high temperatures, similar to pure cobalt and to the previously investigated, more complex Co-17Re-23Cr-1.2Ta-2.6C alloy. It was determined in this study that the transformation temperature depends on the boron content (0-1000 wt. ppm). Nevertheless, the transformation temperature did not change monotonically with the increase in the boron content but reached a minimum at approximately 200 ppm of boron. A probable reason is the interplay between the amount of boron in the matrix and the amount of σ phase, which binds hcp-stabilizing elements (Cr and Re). Moreover, borides were identified in alloys with high boron content.

CVD growth and properties of boron phosphide on 3C-SiC

NASA Astrophysics Data System (ADS)

Padavala, Balabalaji; Frye, C. D.; Wang, Xuejing; Raghothamachar, Balaji; Edgar, J. H.

2016-09-01

Improving the crystalline quality of boron phosphide (BP) is essential for realizing its full potential in semiconductor device applications. In this study, 3C-SiC was tested as a substrate for BP epitaxy. BP films were grown on 3C-SiC(100)/Si, 3C-SiC(111)/Si, and 3C-SiC(111)/4H-SiC(0001) substrates in a horizontal chemical vapor deposition (CVD) system. Films were produced with good crystalline orientation and morphological features in the temperature range of 1000-1200 °C using a PH3+B2H6+H2 mixture. Rotational twinning was absent in the BP due to the crystal symmetry-matching with 3C-SiC. Confocal 3D Raman imaging of BP films revealed primarily uniform peak shift and peak widths across the scanned area, except at defects on the surface. Synchrotron white beam X-ray topography showed the epitaxial relationship between BP and 3C-SiC was (100) 〈 011 〉 BP||(100) 〈 011 〉 3C-SiC and (111) 〈 11 2 ̅ 〉 BP||(111) 〈 11 2 ̅ 〉 3C-SiC. Scanning electron microscopy, Raman spectroscopy and X-ray diffraction analysis indicated residual tensile strain in the films and improved crystalline quality at temperatures below 1200 °C. These results indicated that BP properties could be further enhanced by employing high quality bulk 3C-SiC or 3C-SiC epilayers on 4H-SiC substrates.

CVD growth and properties of boron phosphide on 3C-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Padavala, Balabalaji; Frye, C. D.; Wang, Xuejing

Improving the crystalline quality of boron phosphide (BP) is essential for realizing its full potential in semiconductor device applications. In this study, 3C-SiC was tested as a substrate for BP epitaxy. BP films were grown on 3C-SiC(100)/Si, 3C-SiC(111)/Si, and 3C-SiC(111)/4H-SiC(0001) substrates in a horizontal chemical vapor deposition (CVD) system. Films were produced with good crystalline orientation and morphological features in the temperature range of 1000–1200 °C using a PH3+B2H6+H2 mixture. Rotational twinning was absent in the BP due to the crystal symmetry-matching with 3C-SiC. Confocal 3D Raman imaging of BP films revealed primarily uniform peak shift and peak widths acrossmore » the scanned area, except at defects on the surface. Synchrotron white beam X-ray topography showed the epitaxial relationship between BP and 3C-SiC was (100) <011>BP||(100) <011>3C-SiC and (111)View the MathML sourceBP||(111)View the MathML source3C-SiC. Scanning electron microscopy, Raman spectroscopy and X-ray diffraction analysis indicated residual tensile strain in the films and improved crystalline quality at temperatures below 1200 °C. These results indicated that BP properties could be further enhanced by employing high quality bulk 3C-SiC or 3C-SiC epilayers on 4H-SiC substrates.« less

Superhard nanocomposite of dense polymorphs of boron nitride: Noncarbon material has reached diamond hardness

NASA Astrophysics Data System (ADS)

Dubrovinskaia, Natalia; Solozhenko, Vladimir L.; Miyajima, Nobuyoshi; Dmitriev, Vladimir; Kurakevych, Oleksandr O.; Dubrovinsky, Leonid

2007-03-01

The authors report a synthesis of unique superhard aggregated boron nitride nanocomposites (ABNNCs) showing the enhancement of hardness up to 100% in comparison with single crystal c-BN. Such a great hardness increase is due to the combination of the Hall-Petch and the quantum confinement effects. The decrease of the grain size down to 14nm and the simultaneous formation of the two dense BN phases with hexagonal and cubic structures within the grains at nano- and subnanolevel result in enormous mechanical property enhancement with maximum hardness of 85(5)GPa. Thus, ABNNC is the first non-carbon-based bulk material with the value of hard-ness approaching that of single crystal and polycrystalline diamond and aggregated diamond nanorods. ABNNC also has an unusually high fracture toughness for superhard materials (K1C=15MPam0.5) and wear resistance (WH=11; compare, for industrial polycrystalline diamond, WH=3-4), in combination with high thermal stability (above 1600K in air), making it an exceptional superabrasive.

Sputtered boron indium oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Stewart, Kevin A.; Gouliouk, Vasily; Keszler, Douglas A.; Wager, John F.

2017-11-01

Boron indium oxide (BIO) is studied for thin-film transistor (TFT) channel layer applications. Sputtered BIO thin films exhibit an amorphous phase over a wide range of B2O3/In2O3 ratios and remain amorphous up to 500 °C. The band gap decreases linearly with decreasing boron content, whereas device performance generally improves with decreasing boron content. The best amorphous BIO TFT exhibits a field-effect mobility of 10 cm2 V-1 s-1, turn-on voltage of 2.5 V, and sub-threshold swing of 0.72 V/dec. Decreasing the boron content to 12.5% leads to a polycrystalline phase, but further increases the mobility up to 20-40 cm2 V-1 s-1. TCAD simulation results suggest that the reason for higher performance after increasing the anneal temperature from 200 to 400 °C is due to a lower defect density in the sub-bandgap region of the BIO channel layer.

Electrical and Thermal Transport in Coplanar Polycrystalline Graphene-hBN Heterostructures.

PubMed

Barrios-Vargas, José Eduardo; Mortazavi, Bohayra; Cummings, Aron W; Martinez-Gordillo, Rafael; Pruneda, Miguel; Colombo, Luciano; Rabczuk, Timon; Roche, Stephan

2017-03-08

We present a theoretical study of electronic and thermal transport in polycrystalline heterostructures combining graphene (G) and hexagonal boron nitride (hBN) grains of varying size and distribution. By increasing the hBN grain density from a few percent to 100%, the system evolves from a good conductor to an insulator, with the mobility dropping by orders of magnitude and the sheet resistance reaching the MΩ regime. The Seebeck coefficient is suppressed above 40% mixing, while the thermal conductivity of polycrystalline hBN is found to be on the order of 30-120 Wm -1 K -1 . These results, agreeing with available experimental data, provide guidelines for tuning G-hBN properties in the context of two-dimensional materials engineering. In particular, while we proved that both electrical and thermal properties are largely affected by morphological features (e.g., by the grain size and composition), we find in all cases that nanometer-sized polycrystalline G-hBN heterostructures are not good thermoelectric materials.

Pressure-induced zigzag phosphorus chain and superconductivity in boron monophosphide.

PubMed

Zhang, Xinyu; Qin, Jiaqian; Liu, Hanyu; Zhang, Shiliang; Ma, Mingzhen; Luo, Wei; Liu, Riping; Ahuja, Rajeev

2015-03-04

We report on the prediction of the zinc-blende structure BP into a novel C2/m phase from 113 to 208 GPa which possesses zigzag phosphorus chain structure, followed by another P42/mnm structure above 208 GPa above using the particle-swarm search method. Strong electron-phonon coupling λ in compressed BP is found, in particular for C2/m phase with the zigzag phosphorus chain, which has the highest λ (0.56-0.61) value among them, leading to its high superconducting critical temperature Tc (9.4 K-11.5 K), which is comparable with the 4.5 K to 13 K value of black phosphorus phase I (orthorhombic, Cmca). This is the first system in the boron phosphides which shows superconductivity from the present theoretical calculations. Our results show that pressure-induced zigzag phosphorus chain in BP exhibit higher superconducting temperature TC, opening a new route to search and design new superconductor materials with zigzag phosphorus chains.

Advanced high temperature thermoelectrics for space power

NASA Technical Reports Server (NTRS)

Lockwood, A.; Ewell, R.; Wood, C.

1981-01-01

Preliminary results from a spacecraft system study show that an optimum hot junction temperature is in the range of 1500 K for advanced nuclear reactor technology combined with thermoelectric conversion. Advanced silicon germanium thermoelectric conversion is feasible if hot junction temperatures can be raised roughly 100 C or if gallium phosphide can be used to improve the figure of merit, but the performance is marginal. Two new classes of refractory materials, rare earth sulfides and boron-carbon alloys, are being investigated to improve the specific weight of the generator system. Preliminary data on the sulfides have shown very high figures of merit over short temperature ranges. Both n- and p-type doping have been obtained. Pure boron-carbide may extrapolate to high figure of merit at temperatures well above 1500 K but not lower temperature; n-type conduction has been reported by others, but not yet observed in the JPL program. Inadvertant impurity doping may explain the divergence of results reported.

Method of making an icosahedral boride structure

DOEpatents

Hersee, Stephen D.; Wang, Ronghua; Zubia, David; Aselage, Terrance L.; Emin, David

2005-01-11

A method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate is provided. Preferably the icosahedral boride layer is comprised of either boron phosphide (B.sub.12 P.sub.2) or boron arsenide (B.sub.12 As.sub.2). The provided method achieves improved film crystallinity and lowered impurity concentrations. In one aspect, an epitaxially grown layer of B.sub.12 P.sub.2 with a base layer or substrate of SiC is provided. In another aspect, an epitaxially grown layer of B.sub.12 As.sub.2 with a base layer or substrate of SiC is provided. In yet another aspect, thin films of B.sub.12 P.sub.2 or B.sub.12 As.sub.2 are formed on SiC using CVD or other vapor deposition means. If CVD techniques are employed, preferably the deposition temperature is above 1050.degree. C., more preferably in the range of 1100.degree. C. to 1400.degree. C., and still more preferably approximately 1150.degree. C.

A new computer-aided simulation model for polycrystalline silicon film resistors

NASA Astrophysics Data System (ADS)

Ching-Yuan Wu; Weng-Dah Ken

1983-07-01

A general transport theory for the I-V characteristics of a polycrystalline film resistor has been derived by including the effects of carrier degeneracy, majority-carrier thermionic-diffusion across the space charge regions produced by carrier trapping in the grain boundaries, and quantum mechanical tunneling through the grain boundaries. Based on the derived transport theory, a new conduction model for the electrical resistivity of polycrystalline film resitors has been developed by incorporating the effects of carrier trapping and dopant segregation in the grain boundaries. Moreover, an empirical formula for the coefficient of the dopant-segregation effects has been proposed, which enables us to predict the dependence of the electrical resistivity of phosphorus-and arsenic-doped polycrystalline silicon films on thermal annealing temperature. Phosphorus-doped polycrystalline silicon resistors have been fabricated by using ion-implantation with doses ranged from 1.6 × 10 11 to 5 × 10 15/cm 2. The dependence of the electrical resistivity on doping concentration and temperature have been measured and shown to be in good agreement with the results of computer simulations. In addition, computer simulations for boron-and arsenic-doped polycrystalline silicon resistors have also been performed and shown to be consistent with the experimental results published by previous authors.

A Soluble Dynamic Complex Strategy for the Solution-Processed Fabrication of Organic Thin-Film Transistors of a Boron-Containing Polycyclic Aromatic Hydrocarbon.

PubMed

Matsuo, Kyohei; Saito, Shohei; Yamaguchi, Shigehiro

2016-09-19

The solution-processed fabrication of thin films of organic semiconductors enables the production of cost-effective, large-area organic electronic devices under mild conditions. The formation/dissociation of a dynamic B-N coordination bond can be used for the solution-processed fabrication of semiconducting films of polycyclic aromatic hydrocarbon (PAH) materials. The poor solubility of a boron-containing PAH in chloroform, toluene, and chlorobenzene was significantly improved by addition of minor amounts (1 wt % of solvent) of pyridine derivatives, as their coordination to the boron atom suppresses the inherent propensity of the PAHs to form π-stacks. Spin-coating solutions of the thus formed Lewis acid-base complexes resulted in the formation of amorphous thin films, which could be converted into polycrystalline films of the boron-containing PAH upon thermal annealing. Organic thin-film transistors prepared by this solution process displayed typical p-type characteristics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalyadin, A. E.; Sobolev, N. A., E-mail: nick@sobolev.ioffe.rssi.ru; Strel’chuk, A. M.

2016-02-15

SiGe-based n{sup +}–p–p{sup +} light-emitting diodes (LEDs) with heavily doped layers fabricated by the diffusion (of boron and phosphorus) and CVD (chemical-vapor deposition of polycrystalline silicon layers doped with boron and phosphorus) techniques are studied. The electroluminescence spectra of both kinds of LEDs are identical, but the emission intensity of CVD diodes is ∼20 times lower. The reverse and forward currents in the CVD diodes are substantially higher than those in diffusion-grown diodes. The poorer luminescence and electrical properties of the CVD diodes are due to the formation of defects at the interface between the emitter and base layers.

BP5 monolayer with multiferroicity and negative Poisson’s ratio: a prediction by global optimization method

NASA Astrophysics Data System (ADS)

Wang, Haidi; Li, Xingxing; Sun, Jiuyu; Liu, Zhao; Yang, Jinlong

2017-12-01

Based on global optimization Cuttlefish algorithm, we predict a stable two-dimensional (2D) phase of boron phosphide with 1:5 stoichiometry, i.e. boron pentaphosphide (BP5) monolayer, which has a lower formation energy than that of the commonly believed graphitic phase (g-BP). BP5 monolayer is a multiferroic material with coupled ferroelasticity and ferroelectricity. The predicted reversible strain is up to 41.41%, which is the largest one among all reported ferroelastic materials. Due to the non-centrosymmetric structure and electronegativity differences between boron and phosphorus atoms, an in-plane spontaneous polarization of 1.63  ×  10-10 C m-1 occurs in BP5. Moreover, the recently hunted negative Poisson’s ratio property, is also observed in BP5. As an indirect semiconductor with a band gap of 1.34 eV, BP5 displays outstanding optical and electronic properties, for instance strongly anisotropic visible-light absorption and high carrier mobility. Finally, we demonstrate that AlN (0 1 0) surface could be a suitable substrate for epitaxy growth of BP5 monolayer. Due to the rich and extraordinary properties of BP5, it’s considered to be a potential nanomaterial for designing electromechanical or optoelectronic devices, such as nonvolatile memory with conveniently readable/writeable capability.

Highly oriented diamond films on Si: growth, characterization, and devices

NASA Astrophysics Data System (ADS)

Stoner, Brian R.; Malta, D. M.; Tessmer, A. J.; Holmes, J.; Dreifus, David L.; Glass, R. C.; Sowers, A.; Nemanich, Robert J.

1994-04-01

Highly oriented, (100) textured diamond films have been grown on single-crystal Si substrates via microwave plasma enhanced chemical vapor deposition. A multistep deposition process including bias-enhanced nucleation and textured growth was used to obtain smooth films consisting of epitaxial grains with only low-angle grain boundaries. Boron-doped layers were selectively deposited onto the surface of these oriented films and temperature-dependent Hall effect measurements indicated a 3 to 5 times improvement in hole mobility over polycrystalline films grown under similar conditions. Room temperature hole mobilities between 135 and 278 cm2/V-s were measured for the highly oriented samples as compared to 2 to 50 cm2/V-s for typical polycrystalline films. Grain size effects and a comparison between the transport properties of polycrystalline, highly oriented and homoepitaxial films will be discussed. Metal-oxide- semiconductor field-effect transistors were then fabricated on the highly oriented films and exhibited saturation and pinch-off of the channel current.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagakubo, A.; Ogi, H., E-mail: ogi@me.es.osaka-u.ac.jp; Hirao, M.

Nano-polycrystalline boron nitride (BN) is expected to replace diamond as a superhard and superstiff material. Although its hardening was reported, its elasticity remains unclear and the as-measured hardness could be significantly different from the true value due to the elastic recovery. In this study, we measured the longitudinal-wave elastic constant of nano-polycrystalline BNs using picosecond ultrasound spectroscopy and confirmed the elastic softening for small-grain BNs. We also measured Vickers and Knoop hardness for the same specimens and clarified the relationship between hardness and stiffness. The Vickers hardness significantly increased as the grain size decreased, while the Knoop hardness remained nearlymore » unchanged. We attribute the apparent increase in Vickers hardness to the elastic recovery and propose a model to support this insight.« less

One-Step Facile Synthesis of Cobalt Phosphides for Hydrogen Evolution Reaction Catalysts in Acidic and Alkaline Medium.

PubMed

Sumboja, Afriyanti; An, Tao; Goh, Hai Yang; Lübke, Mechthild; Howard, Dougal Peter; Xu, Yijie; Handoko, Albertus Denny; Zong, Yun; Liu, Zhaolin

2018-05-09

Catalysts for hydrogen evolution reaction are in demand to realize the efficient conversion of hydrogen via water electrolysis. In this work, cobalt phosphides were prepared using a one-step, scalable, and direct gas-solid phosphidation of commercially available cobalt salts. It was found that the effectiveness of the phosphidation reaction was closely related to the state of cobalt precursors at the reaction temperature. For instance, a high yield of cobalt phosphides obtained from the phosphidation of cobalt(II) acetate was related to the good stability of cobalt salt at the phosphidation temperature. On the other hand, easily oxidizable salts (e.g., cobalt(II) acetylacetonate) tended to produce a low amount of cobalt phosphides and a large content of metallic cobalt. The as-synthesized cobalt phosphides were in nanostructures with large catalytic surface areas. The catalyst prepared from phosphidation of cobalt(II) acetate exhibited an improved catalytic activity as compared to its counterpart derived from phosphidation of cobalt(II) acetylacetonate, showing an overpotential of 160 and 175 mV in acidic and alkaline electrolytes, respectively. Both catalysts also displayed an enhanced long-term stability, especially in the alkaline electrolyte. This study illustrates the direct phosphidation behavior of cobalt salts, which serve as a good vantage point in realizing the large-scale synthesis of transition-metal phosphides for high-performance electrocatalysts.

Patents and Licenses Through 1994,

DTIC Science & Technology

1994-01-01

Chiang was employed at Honeywell Radiation Center, where she worked on mercury cadmium telluride (HgCdTe) and gallium phosphide photoconductive...5,251,225 Gallium Indium Arsenide Phosphide 4,258,375; 4,372,791; 4,718,070;4,722,092 Gallium Indium Arsenide Phosphide /Indium Phosphide ...Indirect-Gap Semiconductor 3,636,471 Indium Arsenide 2,990,259 Indium Gallium Arsenide 4,746,620 Indium Phosphide 2,990,259; 4,376,285

Fundamental studies of the metallurgical, electrical, and optical properties of gallium phosphide and gallium phosphide alloys

NASA Technical Reports Server (NTRS)

1972-01-01

Abstracts, bibliographic data, oral presentations, and published papers on (1) Diffusion of Sulfur in Gallium Phosphide and Gallium Arsenide, and (2) Properties of Gallium Phosphide Schottky Barrier Rectifiers for Use at High Temperature are presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Pei; Wang, Yonggang; Wang, Liping

Cubic (space group: Fm3¯m) iridium phosphide, Ir 2P, has been synthesized at high pressure and high temperature. Angle-dispersive synchrotron X-ray diffraction measurements on Ir 2P powder using a diamond-anvil cell at room temperature and high pressures (up to 40.6 GPa) yielded a bulk modulus of B 0 = 306(6) GPa and its pressure derivative B 0'= 6.4(5). Such a high bulk modulus attributed to the short and strongly covalent Ir-P bonds as revealed by first – principles calculations and three-dimensionally distributed [IrP 4] tetrahedron network. Indentation testing on a well–sintered polycrystalline sample yielded the hardness of 11.8(4) GPa. Relatively lowmore » shear modulus of ~64 GPa from theoretical calculations suggests a complicated overall bonding in Ir 2P with metallic, ionic, and covalent characteristics. Additionally, a spin glass behavior is indicated by magnetic susceptibility measurements.« less

40 CFR 180.284 - Zinc phosphide; tolerances for residues.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 24 2011-07-01 2011-07-01 false Zinc phosphide; tolerances for... § 180.284 Zinc phosphide; tolerances for residues. (a) General. Tolerances are established for residues of the phosphine resulting from the use of the rodenticide zinc phosphide in or on the raw...

Discovery of Superconductivity in Hard Hexagonal ε-NbN.

PubMed

Zou, Yongtao; Qi, Xintong; Zhang, Cheng; Ma, Shuailing; Zhang, Wei; Li, Ying; Chen, Ting; Wang, Xuebing; Chen, Zhiqiang; Welch, David; Zhu, Pinwen; Liu, Bingbing; Li, Qiang; Cui, Tian; Li, Baosheng

2016-02-29

Since the discovery of superconductivity in boron-doped diamond with a critical temperature (TC) near 4 K, great interest has been attracted in hard superconductors such as transition-metal nitrides and carbides. Here we report the new discovery of superconductivity in polycrystalline hexagonal ε-NbN synthesized at high pressure and high temperature. Direct magnetization and electrical resistivity measurements demonstrate that the superconductivity in bulk polycrystalline hexagonal ε-NbN is below ∼11.6 K, which is significantly higher than that for boron-doped diamond. The nature of superconductivity in hexagonal ε-NbN and the physical mechanism for the relatively lower TC have been addressed by the weaker bonding in the Nb-N network, the co-planarity of Nb-N layer as well as its relatively weaker electron-phonon coupling, as compared with the cubic δ-NbN counterpart. Moreover, the newly discovered ε-NbN superconductor remains stable at pressures up to ∼20 GPa and is significantly harder than cubic δ-NbN; it is as hard as sapphire, ultra-incompressible and has a high shear rigidity of 201 GPa to rival hard/superhard material γ-B (∼227 GPa). This exploration opens a new class of highly desirable materials combining the outstanding mechanical/elastic properties with superconductivity, which may be particularly attractive for its technological and engineering applications in extreme environments.

Discovery of superconductivity in hard hexagonal ε-NbN

DOE PAGES

Zou, Yongtao; Li, Qiang; Qi, Xintong; ...

2016-02-29

Since the discovery of superconductivity in boron-doped diamond with a critical temperature (T C) near 4 K, great interest has been attracted in hard superconductors such as transition-metal nitrides and carbides. Here we report the new discovery of superconductivity in polycrystalline hexagonal ε-NbN synthesized at high pressure and high temperature. Direct magnetization and electrical resistivity measurements demonstrate that the superconductivity in bulk polycrystalline hexagonal ε-NbN is below ~11.6 K, which is significantly higher than that for boron-doped diamond. The nature of superconductivity in hexagonal ε-NbN and the physical mechanism for the relatively lower T C have been addressed by themore » weaker bonding in the Nb-N network, the co-planarity of Nb-N layer as well as its relatively weaker electron-phonon coupling, as compared with the cubic δ-NbN counterpart. Moreover, the newly discovered ε-NbN superconductor remains stable at pressures up to ~20 GPa and is significantly harder than cubic δ-NbN; it is as hard as sapphire, ultra-incompressible and has a high shear rigidity of 201 GPa to rival hard/superhard material γ-B (~227 GPa). Furthermore, this exploration opens a new class of highly desirable materials combining the outstanding mechanical/elastic properties with superconductivity, which may be particularly attractive for its technological and engineering applications in extreme environments.« less

Discovery of Superconductivity in Hard Hexagonal ε-NbN

PubMed Central

Zou, Yongtao; Qi, Xintong; Zhang, Cheng; Ma, Shuailing; Zhang, Wei; Li, Ying; Chen, Ting; Wang, Xuebing; Chen, Zhiqiang; Welch, David; Zhu, Pinwen; Liu, Bingbing; Li, Qiang; Cui, Tian; Li, Baosheng

2016-01-01

Since the discovery of superconductivity in boron-doped diamond with a critical temperature (TC) near 4 K, great interest has been attracted in hard superconductors such as transition-metal nitrides and carbides. Here we report the new discovery of superconductivity in polycrystalline hexagonal ε-NbN synthesized at high pressure and high temperature. Direct magnetization and electrical resistivity measurements demonstrate that the superconductivity in bulk polycrystalline hexagonal ε-NbN is below ∼11.6 K, which is significantly higher than that for boron-doped diamond. The nature of superconductivity in hexagonal ε-NbN and the physical mechanism for the relatively lower TC have been addressed by the weaker bonding in the Nb-N network, the co-planarity of Nb-N layer as well as its relatively weaker electron-phonon coupling, as compared with the cubic δ-NbN counterpart. Moreover, the newly discovered ε-NbN superconductor remains stable at pressures up to ∼20 GPa and is significantly harder than cubic δ-NbN; it is as hard as sapphire, ultra-incompressible and has a high shear rigidity of 201 GPa to rival hard/superhard material γ-B (∼227 GPa). This exploration opens a new class of highly desirable materials combining the outstanding mechanical/elastic properties with superconductivity, which may be particularly attractive for its technological and engineering applications in extreme environments. PMID:26923318

Mechanical mixtures of metal oxides and phosphorus pentoxide as novel precursors for the synthesis of transition-metal phosphides.

PubMed

Guo, Lijuan; Zhao, Yu; Yao, Zhiwei

2016-01-21

This study presents a new type of precursor, mechanical mixtures of metal oxides (MOs) and phosphorus pentoxide (P2O5) are used to synthesize Ni2P, Co2P and MoP phosphides by the H2 reduction method. In addition, this is first report of common solid-state P2O5 being used as a P source for the synthesis of metal phosphides. The traditional precursors are usually prepared via a complicated preparation procedure involving dissolution, drying and calcination steps. However, these novel MOs/P2O5 precursors can be obtained only by simple mechanical mixing of the starting materials. Furthermore, unlike the direct transformation from amorphous phases to phosphides, various specific intermediates were involved in the transformation from MOs/P2O5 to phosphides. It is worthy to note that the dispersions of Ni2P, Co2P and MoP obtained from MOs/P2O5 precursors were superior to those of the corresponding phosphides prepared from the abovementioned traditional precursors. It is suggested that the morphology of the as-prepared metal phosphides might be inherited from the corresponding MOs. Based on the results of XRD, XPS, SEM and TEM, the formation pathway of phosphides can be defined as MOs/P2O5 precursors → complex intermediates (metals, metal phosphates and metal oxide-phosphates) → metal phosphides.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skariah, Benoy, E-mail: skariahbenoy@yahoo.co.in, E-mail: dr.boben1@gmail.com; Thomas, Boben, E-mail: skariahbenoy@yahoo.co.in, E-mail: dr.boben1@gmail.com

For LPG sensing, boron doped (0.2 to 0.8 wt. %) polycrystalline tin oxide thin films are deposited by spray pyrolysis in the temperature range 325 - 430 °C. Sensor response of 56 % is achieved for 1000 ppm of LPG, at an operating temperature of 350 °C. The effects of ageing under ambient conditions on the sensor response are investigated for a storage period of six years. Ageing increases the film resistance but the gas response is lowered. XRD, SEM, FESEM, FTIR and XPS are utilized for structural, morphological and compositional charaterisations.

Effects of chemical states of carbon on deuterium retention in carbon-containing materials

NASA Astrophysics Data System (ADS)

Oyaidzu, Makoto; Kimura, Hiromi; Nakahata, Toshihiko; Nishikawa, Yusuke; Tokitani, Masayuki; Oya, Yasuhisa; Iwakiri, Hirotomo; Yoshida, Naoaki; Okuno, Kenji

2007-08-01

Deuterium retention behavior in highly oriented pyrolytic graphite (HOPG), poly-crystalline diamond, poly-crystalline SiC, sintered WC, and converted B 4C were investigated to reveal tritium behavior in re-deposition and co-deposition layers. Such layers would contain carbon, when the first wall and/or divertor were made of graphite or carbon-containing materials. Furthermore, the employment of other materials such as tungsten, and first wall conditioning such as boronization would complicate the layers. No different deuterium trapping sites due to carbon from those in HOPG were found in all the samples, where two deuterium trapping processes were observed: hot atom chemical trapping of energetic deuterium by a dangling bond of carbon and thermochemical trapping of thermalized deuterium in a constituent atom vacancy surrounded by carbons. Additionally, the latter reaction could be easily counteracted by or competed with the other deuterium trapping reactions by constituent atoms.

Electrical conductivity enhancement by boron-doping in diamond using first principle calculations

NASA Astrophysics Data System (ADS)

Ullah, Mahtab; Ahmed, Ejaz; Hussain, Fayyaz; Rana, Anwar Manzoor; Raza, Rizwan

2015-04-01

Boron doping in diamond plays a vital role in enhancing electrical conductivity of diamond by making it a semiconductor, a conductor or even a superconductor. To elucidate this fact, partial and total density of states has been determined as a function of B-content in diamond. Moreover, the orbital charge distributions, B-C bond lengths and their population have been studied for B-doping in pristine diamond thin films by applying density functional theory (DFT). These parameters have been found to be influenced by the addition of different percentages of boron atoms in diamond. The electronic density of states, B-C bond situations as well as variations in electrical conductivities of diamond films with different boron content and determination of some relationship between these parameters were the basic tasks of this study. Diamond with high boron concentration (∼5.88% B-atoms) showed maximum splitting of energy bands (caused by acceptor impurity states) at the Fermi level which resulted in the enhancement of electron/ion conductivities. Because B atoms either substitute carbon atoms and/or assemble at grain boundaries (interstitial sites) inducing impurity levels close to the top of the valence band. At very high B-concentration, impurity states combine to form an impurity band which accesses the top of the valence band yielding metal like conductivity. Moreover, bond length and charge distributions are found to decrease with increase in boron percentage in diamond. It is noted that charge distribution decreased from +1.89 to -1.90 eV whereas bond length reduced by 0.04 Å with increasing boron content in diamond films. These theoretical results support our earlier experimental findings on B-doped diamond polycrystalline films which depict that the addition of boron atoms to diamond films gives a sudden fall in resistivity even up to 105 Ω cm making it a good semiconductor for its applications in electrical devices.

Mechanical strength and tribological behavior of ion-beam deposited boron nitride films on non-metallic substrates

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Buckley, Donald H.; Pouch, John J.; Alterovitz, Samuel A.; Sliney, Harold E.

1987-01-01

An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2.

Mechanical strength and tribological behavior of ion-beam-deposited boron nitride films on non-metallic substrates

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Pouch, John J.; Alterovitz, Samuel A.; Sliney, Harold E.; Buckley, Donald H.

1987-01-01

An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2.

Epitaxy of boron phosphide on AlN, 4H-SiC, 3C-SiC and ZrB2 substrates

NASA Astrophysics Data System (ADS)

Padavala, Balabalaji

The semiconductor boron phosphide (BP) has many outstanding features making it attractive for developing various electronic devices, including neutron detectors. In order to improve the efficiency of these devices, BP must have high crystal quality along with the best possible electrical properties. This research is focused on growing high quality crystalline BP films on a variety of superior substrates like AlN, 4H-SiC, 3C-SiC and ZrB2 by chemical vapor deposition. In particular, the influence of various parameters such as temperature, reactant flow rates, and substrate type and its crystalline orientation on the properties of BP films were studied in detail. Twin-free BP films were produced by depositing on off-axis 4H-SiC(0001) substrate tilted 4° toward [11¯00] and crystal symmetry matched zincblende 3C-SiC. BP crystalline quality improved at higher deposition temperature (1200°C) when deposited on AlN, 4H-SiC, whereas increased strain in 3C-SiC and increased boron segregation in ZrB2 at higher temperatures limited the best deposition temperature to below 1200°C. In addition, higher flow ratios of PH 3 to B2H6 resulted in smoother films and improved quality of BP on all substrates. The FWHM of the Raman peak (6.1 cm -1), XRD BP(111) peak FWHM (0.18°) and peak ratios of BP(111)/(200) = 5157 and BP(111)/(220) = 7226 measured on AlN/sapphire were the best values reported in the literature for BP epitaxial films. The undoped films on AlN/sapphire were n-type with a highest electron mobility of 37.8 cm2/V˙s and a lowest carrier concentration of 3.15x1018 cm -3. Raman imaging had lower values of FWHM (4.8 cm-1 ) and a standard deviation (0.56 cm-1) for BP films on AlN/sapphire compared to 4H-SiC, 3C-SiC substrates. X-ray diffraction and Raman spectroscopy revealed residual tensile strain in BP on 4H-SiC, 3C-SiC, ZrB2/4H-SiC, bulk AlN substrates while compressive strain was evident on AlN/sapphire and bulk ZrB2 substrates. Among the substrates studied, AlN/sapphire proved to be the best choice for BP epitaxy, even though it did not eliminate rotational twinning in BP. The substrates investigated in this work were found to be viable for BP epitaxy and show promising potential for further enhancement of BP properties.

InP (Indium Phosphide): Into the future

NASA Technical Reports Server (NTRS)

Brandhorst, Henry W., Jr.

1989-01-01

Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide.

Synthesis of boron nitride coatings on quartz fibers: Thickness control and mechanism research

NASA Astrophysics Data System (ADS)

Zheng, Yu; Wang, Shubin

2011-10-01

Boron nitride (BN) coatings were successfully synthesized on quartz fibers by dip-coating in boric acid and urea solutions at 700 °C. The SEM micrographs indicated that the quartz fibers were fully covered by coatings with smooth surface. The XRD, FT-IR, XPS spectra and HR-TEM results showed that the composition of the coatings which combined closely with the quartz fibers was polycrystalline h-BN. By changing the dip circles, the coating thickness was well controlled. The thicknesses of samples dipped less than six circles increased linearly with dipping-circles; and the increment of coating thickness would slow down when the fibers were dipped 10 circles. After being dipped for 10 circles, the thickness was about 300 nm. The coating thickness was also established by calculation and the calculated results were consistent with the results measured by micrograph.

Aluminum Phosphide Poisoning-Related Deaths in Tehran, Iran, 2006 to 2013

PubMed Central

Etemadi-Aleagha, Afshar; Akhgari, Maryam; Iravani, Fariba Sardari

2015-01-01

Abstract Metal phosphides such as aluminum phosphide are potent insecticides. This highly toxic substance is used for rice and other grains protection in Iran. Due to its high toxicity potential and easy availability, it is widely used as a suicide poison. This substance has no effective antidote and the incidence of deaths due to its poisoning is increasing day by day in Iran. The present study was conducted to show the increasing incidence of fatal aluminum phosphide poisoning and its toxicological and forensic aspects in an 8-year study, 2006 to 2013. Autopsy sheets were reviewed and cases with the history of aluminum phosphide poisoning were selected. Toxicological analysis results, demographic and necroscopic examination findings were studied. A total of 51.8% of studied cases were female. Most of the cases were between 10 and 40 years old. The manner of death was self-poisoning in 85% of cases. Morphine, ethanol, and amitriptyline were the most common additional drugs detected in toxicological analysis. The incidence of fatal aluminum phosphide poisoning cases referred for phosphine analysis was 5.22 and 37.02 per million of population of Tehran in 2006 and 2013, respectively. The results of this study showed that in spite of ban and restrictions, there was a dramatic increase in the incidence of fatal aluminum phosphide poisoning in Tehran from 2006 to 2013. Safety alert should be highlighted in training program for all population groups about the toxic effects of aluminum phosphide tablets. PMID:26402837

40 CFR 180.284 - Zinc phosphide; tolerances for residues.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 24 2014-07-01 2014-07-01 false Zinc phosphide; tolerances for residues. 180.284 Section 180.284 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) PESTICIDE PROGRAMS TOLERANCES AND EXEMPTIONS FOR PESTICIDE CHEMICAL RESIDUES IN FOOD Specific Tolerances § 180.284 Zinc phosphide; tolerances for...

40 CFR 180.284 - Zinc phosphide; tolerances for residues.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 40 Protection of Environment 25 2012-07-01 2012-07-01 false Zinc phosphide; tolerances for residues. 180.284 Section 180.284 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) PESTICIDE PROGRAMS TOLERANCES AND EXEMPTIONS FOR PESTICIDE CHEMICAL RESIDUES IN FOOD Specific Tolerances § 180.284 Zinc phosphide; tolerances for...

40 CFR 180.284 - Zinc phosphide; tolerances for residues.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 25 2013-07-01 2013-07-01 false Zinc phosphide; tolerances for residues. 180.284 Section 180.284 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) PESTICIDE PROGRAMS TOLERANCES AND EXEMPTIONS FOR PESTICIDE CHEMICAL RESIDUES IN FOOD Specific Tolerances § 180.284 Zinc phosphide; tolerances for...

A new approach to synthesize supported ruthenium phosphides for hydrodesulfurization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Qingfang; Key Laboratory of Advanced Energy Materials Chemistry; Wang, Zhiqiang

2016-02-15

Highlights: • We bring out a new method to synthesize noble metal phosphides at low temperature. • Both RuP and Ru{sub 2}P were synthesized using triphenylphosphine as phosphorus sources. • Ru{sub 2}P was the better active phase for HDS than RuP and metal Ru. • RuP/SiO{sub 2} prepared by new method had better HDS activity to that by TPR method. - Abstract: Supported noble metal ruthenium phosphides were synthesized by one-step H{sub 2}-thermal treatment method using triphenylphosphine (TPP) as phosphorus sources at low temperatures. Two phosphides RuP and Ru{sub 2}P can be prepared by this method via varying the molarmore » ratio of metal salt and TPP. The as-prepared phosphides were characterized by X-ray powder diffraction (XRD), low-temperature N{sub 2} adsorption, CO chemisorption and transmission electronic microscopy (TEM). The supported ruthenium phosphides prepared by new method and conventional method together with contradistinctive metallic ruthenium were evaluated in hydrodesulfurization (HDS) of dibenzothiophene (DBT). The catalytic results showed that metal-rich Ru{sub 2}P was the better active phase for HDS than RuP and metal Ru. Besides this, ruthenium phosphide catalyst prepared by new method exhibited superior HDS activity to that prepared by conventional method.« less

Metal Phosphides and Phosphates-based Electrodes for Electrochemical Supercapacitors.

PubMed

Li, Xin; Elshahawy, Abdelnaby M; Guan, Cao; Wang, John

2017-10-01

Phosphorus compounds, such as metal phosphides and phosphates have shown excellent performances and great potential in electrochemical energy storage, which are demonstrated by research works published in recent years. Some of these metal phosphides and phosphates and their hybrids compare favorably with transition metal oxides/hydroxides, which have been studied extensively as a class of electrode materials for supercapacitor applications, where they have limitations in terms of electrical and ion conductivity and device stability. To be specific, metal phosphides have both metalloid characteristics and good electric conductivity. For metal phosphates, the open-framework structures with large channels and cavities endow them with good ion conductivity and charge storage capacity. In this review, we present the recent progress on metal phosphides and phosphates, by focusing on their advantages/disadvantages and potential applications as a new class of electrode materials in supercapacitors. The synthesis methods to prepare these metal phosphides/phosphates are looked into, together with the scientific insights involved, as they strongly affect the electrochemical energy storage performance. Particular attentions are paid to those hybrid-type materials, where strong synergistic effects exist. In the summary, the future perspectives and challenges for the metal phosphides, phosphates and hybrid-types are proposed and discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Catalytic decomposition of toxic chemicals over iron group metals supported on carbon nanotubes.

PubMed

Li, Lili; Chen, Can; Chen, Long; Zhu, Zixue; Hu, Jianli

2014-03-18

This study explores catalytic decomposition of phosphine (PH3) using iron group metals (Co, Ni) and metal oxides (Fe2O3, Co(3)O4, NiO) supported on carbon nanotubes (CNTs). The catalysts are synthesized by means of a deposition-precipitation method. The morphology, structure, and composition of the catalysts are characterized using a number of analytical instrumentations, including high-resolution transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, BET surface area measurement, and inductively coupled plasma. The activity of the catalysts in the PH3 decomposition reaction is measured and correlated with their surface and structural properties. The characterization results show that phosphidation occurs on the catalyst surface, and the resulting metal phosphides act as an active phase in the PH3 decomposition reaction. Cobalt phosphide, CoP, is formed on Co/CNTs and Co(3)O4/CNTs, whereas iron phosphide, FeP, is formed on Fe2O3/CNTs. In contrast, phosphorus-rich phosphide NiP2 is formed on Ni/CNTs and NiO/CNTs. The initial activities of the catalysts are shown in the following sequence: Ni/CNTs > Co/CNTs > Co(3)O4/CNTs >NiO/CNTs > Fe2O3/CNTs, whereas activities of metal phosphides are shown in the following order: CoP > NiP2 > FeP. The catalytic activity of metal phosphides is attributed to their electronic properties. Cobalt phosphide formed on Co/CNTs and Co(3)O4/CNTs exhibits not only the highest activity, but also long-term stability in the PH3 decomposition reaction.

Microwave-assisted synthesis of transition metal phosphide

DOEpatents

Viswanathan, Tito

2014-12-30

A method of synthesizing transition metal phosphide. In one embodiment, the method has the steps of preparing a transition metal lignosulfonate, mixing the transition metal lignosulfonate with phosphoric acid to form a mixture, and subjecting the mixture to a microwave radiation for a duration of time effective to obtain a transition metal phosphide.

Two-Dimensional Phosphorene-Derived Protective Layers on a Lithium Metal Anode for Lithium-Oxygen Batteries.

PubMed

Kim, Youngjin; Koo, Dongho; Ha, Seongmin; Jung, Sung Chul; Yim, Taeeun; Kim, Hanseul; Oh, Seung Kyo; Kim, Dong-Min; Choi, Aram; Kang, Yongku; Ryu, Kyoung Han; Jang, Minchul; Han, Young-Kyu; Oh, Seung M; Lee, Kyu Tae

2018-05-04

Lithium-oxygen (Li-O 2 ) batteries are desirable for electric vehicles because of their high energy density. Li dendrite growth and severe electrolyte decomposition on Li metal are, however, challenging issues for the practical application of these batteries. In this connection, an electrochemically active two-dimensional phosphorene-derived lithium phosphide is introduced as a Li metal protective layer, where the nanosized protective layer on Li metal suppresses electrolyte decomposition and Li dendrite growth. This suppression is attributed to thermodynamic properties of the electrochemically active lithium phosphide protective layer. The electrolyte decomposition is suppressed on the protective layer because the redox potential of lithium phosphide layer is higher than that of electrolyte decomposition. Li plating is thermodynamically unfavorable on lithium phosphide layers, which hinders Li dendrite growth during cycling. As a result, the nanosized lithium phosphide protective layer improves the cycle performance of Li symmetric cells and Li-O 2 batteries with various electrolytes including lithium bis(trifluoromethanesulfonyl)imide in N,N-dimethylacetamide. A variety of ex situ analyses and theoretical calculations support these behaviors of the phosphorene-derived lithium phosphide protective layer.

Can Ni phosphides become viable hydroprocessing catalysts?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soled, S.; Miseo, S.; Baumgartner, J.

2015-05-15

We prepared higher surface area nickel phosphides than are normally found by reducing nickel phosphate. To do this, we hydrothermally synthesized Ni hydroxy phosphite precursors with low levels of molybdenum substitution. The molybdenum substitution increases the surface area of these precursors. During pretreatment in a sulfiding atmosphere (such as H2S/H2) dispersed islands of MoS2 segregate from the precursor and provide a pathway for H2 dissociation that allows reduction of the phosphite precursor to nickel phosphide at substantially lower temperatures than in the absence of MoS2. The results reported here show that to create nickel phosphides with comparable activity to conventionalmore » supported sulfide catalysts, one would have to synthesize the phosphide with surface areas exceeding 400 m2/g (i.e. with nanoparticles less than 30 Å in lateral dimension).« less

Porous Cobalt Phosphide Polyhedrons with Iron Doping as an Efficient Bifunctional Electrocatalyst.

PubMed

Li, Feng; Bu, Yunfei; Lv, Zijian; Mahmood, Javeed; Han, Gao-Feng; Ahmad, Ishfaq; Kim, Guntae; Zhong, Qin; Baek, Jong-Beom

2017-10-01

Iron (Fe)-doped porous cobalt phosphide polyhedrons are designed and synthesized as an efficient bifunctional electrocatalyst for both hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). The synthesis strategy involves one-step route for doping foreign metallic element and forming porous cobalt phosphide polyhedrons. With varying doping levels of Fe, the optimized Fe-doped porous cobalt phosphide polyhedron exhibits significantly enhanced HER and OER performances, including low onset overpotentials, large current densities, as well as small Tafel slopes and good electrochemical stability during HER and OER. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Future Directions for Selected Topics in Physics and Materials Science

DTIC Science & Technology

2012-07-12

referred to as lightides (e.g. borides , nitrides, phosphides) • Materials for energy conversion, energy storage, energy transport and energy production...Distributed nanosystems and sensors • Strategy for multilayered combinatorics • lightides ( borides , nitrides, phosphides, • New applications for...Strategy for multilayered combinatorics Lightides ( borides , nitrides, phosphides) • Energy conversion, .storage and production • Precision control

Optimal design study of high efficiency indium phosphide space solar cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Flood, Dennis J.

1990-01-01

Recently indium phosphide solar cells have achieved beginning of life AMO efficiencies in excess of 19 pct. at 25 C. The high efficiency prospects along with superb radiation tolerance make indium phosphide a leading material for space power requirements. To achieve cost effectiveness, practical cell efficiencies have to be raised to near theoretical limits and thin film indium phosphide cells need to be developed. The optimal design study is described of high efficiency indium phosphide solar cells for space power applications using the PC-1D computer program. It is shown that cells with efficiencies over 22 pct. AMO at 25 C could be fabricated by achieving proper material and process parameters. It is observed that further improvements in cell material and process parameters could lead to experimental cell efficiencies near theoretical limits. The effect of various emitter and base parameters on cell performance was studied.

Boride Formation Induced by pcBN Tool Wear in Friction-Stir-Welded Stainless Steels

NASA Astrophysics Data System (ADS)

Park, Seung Hwan C.; Sato, Yutaka S.; Kokawa, Hiroyuki; Okamoto, Kazutaka; Hirano, Satoshi; Inagaki, Masahisa

2009-03-01

The wear of polycrystalline cubic boron nitride (pcBN) tool and its effect on second phase formation were investigated in stainless steel friction-stir (FS) welds. The nitrogen content and the flow stress were analyzed in these welds to examine pcBN tool wear. The nitrogen content in stir zone (SZ) was found to be higher in the austenitic stainless steel FS welds than in the ferritic and duplex stainless steel welds. The flow stress of austenitic stainless steels was almost 1.5 times larger than that of ferritic and duplex stainless steels. These results suggest that the higher flow stress causes the severe tool wear in austenitic stainless steels, which results in greater nitrogen pickup in austenitic stainless steel FS welds. From the microstructural observation, a possibility was suggested that Cr-rich borides with a crystallographic structure of Cr2B and Cr5B3 formed through the reaction between the increased boron and nitrogen and the matrix during FS welding (FSW).

Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy

NASA Astrophysics Data System (ADS)

Lu, Guangyuan; Wu, Tianru; Yuan, Qinghong; Wang, Huishan; Wang, Haomin; Ding, Feng; Xie, Xiaoming; Jiang, Mianheng

2015-01-01

Hexagonal boron nitride (h-BN) has attracted significant attention because of its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapour deposition in earlier reports are always polycrystalline with small grains because of high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60 per mm2 by optimizing Ni ratio in substrates. The strategy enables the growth of single-crystal h-BN grains up to 7,500 μm2, approximately two orders larger than that in previous reports. This work not only provides valuable information for understanding h-BN nucleation and growth mechanisms, but also gives an effective alternative to exfoliated h-BN as a high-quality dielectric layer for large-scale nanoelectronic applications.

Shock synthesized and static sintered boron nitride cutting tool

NASA Astrophysics Data System (ADS)

Araki, M.; Kuroyama, Y.

1986-05-01

Shock synthesis of wBN (wurtzite phase boron nitride) on an industrial scale was achieved by Nippon Oil & Fats and Showa Denko in 1971. It seemed that the resultant wBN powder might display excellent qualities as a cutting tool material when it was sintered under very high static pressure and temperature because of its polycrystalline nature. Attempts to produce a wBN cutting tool material were commenced by the Tokyo Institute of Technology and Nippon Oil & Fats in 1976 and commercially available wBN cutting tools were first sold in 1980. Meanwhile, a new type of explosion chamber designed to eliminate explosion sound and earth vibration problems, novel high pressure vessels and other peripheral apparatuses have been developed. Now, WURZIN (trademark for the wBN cutting tool) is used in many aspects of the steel cutting field because it is durable when cutting various steels from mild steels to superalloys under high speed, interrupt and precision cutting conditions.

Defect-selective dry etching for quick and easy probing of hexagonal boron nitride domains.

PubMed

Wu, Qinke; Lee, Joohyun; Park, Sangwoo; Woo, Hwi Je; Lee, Sungjoo; Song, Young Jae

2018-03-23

In this study, we demonstrate a new method to selectively etch the point defects or the boundaries of as-grown hexagonal boron nitride (hBN) films and flakes in situ on copper substrates using hydrogen and argon gases. The initial quality of the chemical vapor deposition-grown hBN films and flakes was confirmed by UV-vis absorption spectroscopy, atomic force microscopy, and transmission electron microscopy. Different gas flow ratios of Ar/H 2 were then employed to etch the same quality of samples and it was found that etching with hydrogen starts from the point defects and grows epitaxially, which helps in confirming crystalline orientations. However, etching with argon is sensitive to line defects (boundaries) and helps in visualizing the domain size. Finally, based on this defect-selective dry etching technique, it could be visualized that the domains of a polycrystalline hBN monolayer merged together with many parts, even with those that grew from a single nucleation seed.

Defect-selective dry etching for quick and easy probing of hexagonal boron nitride domains

NASA Astrophysics Data System (ADS)

Wu, Qinke; Lee, Joohyun; Park, Sangwoo; Woo, Hwi Je; Lee, Sungjoo; Song, Young Jae

2018-03-01

In this study, we demonstrate a new method to selectively etch the point defects or the boundaries of as-grown hexagonal boron nitride (hBN) films and flakes in situ on copper substrates using hydrogen and argon gases. The initial quality of the chemical vapor deposition-grown hBN films and flakes was confirmed by UV-vis absorption spectroscopy, atomic force microscopy, and transmission electron microscopy. Different gas flow ratios of Ar/H2 were then employed to etch the same quality of samples and it was found that etching with hydrogen starts from the point defects and grows epitaxially, which helps in confirming crystalline orientations. However, etching with argon is sensitive to line defects (boundaries) and helps in visualizing the domain size. Finally, based on this defect-selective dry etching technique, it could be visualized that the domains of a polycrystalline hBN monolayer merged together with many parts, even with those that grew from a single nucleation seed.

The Diamond Window with Boron-Doped Layers for the Output of Microwave Radiation at High Peak and Average Power Levels

NASA Astrophysics Data System (ADS)

Ivanov, O. A.; Kuzikov, S. V.; Vikharev, A. A.; Vikharev, A. L.; Lobaev, M. A.

2017-10-01

We propose a novel design of the barrier window for the output of microwave radiation at high peak and average power levels. A window based on a plate of polycrystalline CVD diamond with thin (nanometer-thick) boron-doped layers with increased conductivity is considered. Such a window, which retains the low radiation loss due to the small total thickness of the conductive layers and the high thermal conductivity inherent in diamond, prevents accumulation of a static charge on its surface, on the one hand, and allows one to produce a static electric field on the surface of the doped layer, which impedes the development of a multipactor discharge, on the other hand. In this case, a high level of the power of the transmitted radiation and a large passband width are ensured by choosing the configuration of the field in the form of a traveling wave inside the window.

Indium phosphide space solar cell research: Where we are and where we are going

NASA Technical Reports Server (NTRS)

Jain, R. K.; Flood, D. J.; Weinberg, Irving

1995-01-01

Indium phosphide is considered to be a strong contender for many photovoltaic space applications because of its radiation resistance and its potential for high efficiency. An overview of recent progress is presented, and possible future research directions for indium phosphide space solar cells are discussed. The topics considered include radiation damage studies and space flight experiments.

Electron emitting device and method of making the same

DOEpatents

Olsen, Gregory Hammond; Martinelli, Ramon Ubaldo; Ettenberg, Michael

1977-04-19

A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.

Use of continuous renal replacement therapy in acute aluminum phosphide poisoning: a novel therapy.

PubMed

Nasa, Prashant; Gupta, Ankur; Mangal, Kishore; Nagrani, S K; Raina, Sanjay; Yadav, Rohit

2013-09-01

Aluminum phosphide is most common cause of poisoning in northern India. There is no specific antidote available and management of such cases is mainly supportive with high mortality. We present two cases of severe acute aluminium phosphide poisoning where continuous renal replacement therapy (CRRT) was started early along with other resuscitative measures and both the patients survived.

B 12P 2: Improved Epitaxial Growth and Evaluation of Alpha Irradiation on its Electrical Transport Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frye, Clint D.

The wide bandgap (3.35 eV) semiconductor icosahedral boron phosphide (B 12P 2) has been reported to self-heal from radiation damage from β particles (electrons) with energies up to 400 keV by demonstrating no lattice damage using transmission electron microscopy. This property could be exploited to create radioisotope batteries–semiconductor devices that directly convert the decay energy from a radioisotope to electricity. Such devices potentially have enormous power densities and decades-long lifetimes. To date, the radiation hardness of B 12P 2 has not been characterized by electrical measurements nor have B 12P 2 radioisotope batteries been realized. Therefore, this study was undertakenmore » to evaluate the radiation hardness of B 12P 2 after improving its epitaxial growth, developing ohmic electrical contacts, and reducing the residual impurities. Subsequently, the effects of radiation from a radioisotope on the electrical transport properties of B 12P 2 were tested.« less

Novel p-n heterojunction copper phosphide/cuprous oxide photocathode for solar hydrogen production.

PubMed

Chen, Ying-Chu; Chen, Zhong-Bo; Hsu, Yu-Kuei

2018-08-01

A Copper phosphide (Cu 3 P) micro-rod (MR) array, with coverage by an n-Cu 2 O thin layer by electrodeposition as a photocathode, has been directly fabricated on copper foil via simple electro-oxidation and phosphidation for photoelectrochemical (PEC) hydrogen production. The morphology, structure, and composition of the Cu 3 P/Cu 2 O heterostructure are systematically analyzed using a scanning electron microscope (SEM), X-ray diffraction and X-ray photoelectron spectra. The PEC measurements corroborate that the p-Cu 3 P/n-Cu 2 O heterostructural photocathode illustrates efficient charge separation and low charge transfer resistance to achieve the highest photocurrent of 430 μA cm -2 that is greater than other transition metal phosphide materials. In addition, a detailed energy diagram of the p-Cu 3 P/n-Cu 2 O heterostructure was investigated using Mott-Schottky analysis. Our study paves the way to explore phosphide-based materials in a new class for solar energy applications. Copyright © 2018 Elsevier Inc. All rights reserved.

Intentional fatal metallic phosphide poisoning in a dog--a case report.

PubMed

Nagy, Andras-Laszlo; Bolfa, Pompei; Mihaiu, Marian; Catoi, Cornel; Oros, Adrian; Taulescu, Marian; Tabaran, Flaviu

2015-07-23

Metallic phosphides are extremely toxic pesticides that are regulated in their usage. Information concerning the impact of metallic phosphides on human health is abundant. Data regarding the clinical pathology of phosphide poisoning in humans or domestic and wild animals is largely incomplete with only a few cases of metallic phosphide poisoning being reported every year, especially in humans. For the majority of cases reported in dogs the data are vague or incomplete. Here we report a complete and detailed description of pathological changes in a case of intentional metallic phosphide poisoning in a dog including an exhaustive examination of the brain. A 1 year old, male, Belgian Shepherd crossbreed dog with a clean medical history and no observed clinical signs prior to death, was submitted for post mortem examination. The dog was found dead by the owner. Near the body a suspect mix of bread, fat and a blackish powder was found. The owner announced the authorities and submitted the animal and the possible bait for forensic examination. At necropsy, multisystemic necrotic and degenerative lesions were observed. Histological exam confirmed the presence of necrotic and degenerative lesions of variable severity in all of the examined organs. The toxicological forensic examination revealed the presence of the phosphine gas in the gastric content and the bait. Metallic phosphide poisoning is a rarely reported entity, since the diagnosis of intentional poisoning with these compounds is a great challenge for forensic pathologists and toxicologists. To our knowledge, this is the first study describing the lesions completely in veterinary forensic toxicology. We assume that the toxic shows systemic endotheliotropism and damage of the endothelial cells responsible for the hemorrhagic lesions and for the secondary ischemic necrosis in various organs. This report will contribute to a better understanding of the pathogenesis in cases of acute metallic phosphide exposure in animals.

Method of synthesizing bulk transition metal carbide, nitride and phosphide catalysts

DOEpatents

Choi, Jae Soon; Armstrong, Beth L; Schwartz, Viviane

2015-04-21

A method for synthesizing catalyst beads of bulk transmission metal carbides, nitrides and phosphides is provided. The method includes providing an aqueous suspension of transition metal oxide particles in a gel forming base, dropping the suspension into an aqueous solution to form a gel bead matrix, heating the bead to remove the binder, and carburizing, nitriding or phosphiding the bead to form a transition metal carbide, nitride, or phosphide catalyst bead. The method can be tuned for control of porosity, mechanical strength, and dopant content of the beads. The produced catalyst beads are catalytically active, mechanically robust, and suitable for packed-bed reactor applications. The produced catalyst beads are suitable for biomass conversion, petrochemistry, petroleum refining, electrocatalysis, and other applications.

Gallium phosphide nanowires as a substrate for cultured neurons.

PubMed

Hällström, Waldemar; Mårtensson, Thomas; Prinz, Christelle; Gustavsson, Per; Montelius, Lars; Samuelson, Lars; Kanje, Martin

2007-10-01

Dissociated sensory neurons were cultured on epitaxial gallium phosphide (GaP) nanowires grown vertically from a gallium phosphide surface. Substrates covered by 2.5 microm long, 50 nm wide nanowires supported cell adhesion and axonal outgrowth. Cell survival was better on nanowire substrates than on planar control substrates. The cells interacted closely with the nanostructures, and cells penetrated by hundreds of wires were observed as well as wire bending due to forces exerted by the cells.

Boron-doped diamond electrode: synthesis, characterization, functionalization and analytical applications.

PubMed

Luong, John H T; Male, Keith B; Glennon, Jeremy D

2009-10-01

In recent years, conductive diamond electrodes for electrochemical applications have been a major focus of research and development. The impetus behind such endeavors could be attributed to their wide potential window, low background current, chemical inertness, and mechanical durability. Several analytes can be oxidized by conducting diamond compared to other carbon-based materials before the breakdown of water in aqueous electrolytes. This is important for detecting and/or identifying species in solution since oxygen and hydrogen evolution do not interfere with the analysis. Thus, conductive diamond electrodes take electrochemical detection into new areas and extend their usefulness to analytes which are not feasible with conventional electrode materials. Different types of diamond electrodes, polycrystalline, microcrystalline, nanocrystalline and ultrananocrystalline, have been synthesized and characterized. Of particular interest is the synthesis of boron-doped diamond (BDD) films by chemical vapor deposition on various substrates. In the tetrahedral diamond lattice, each carbon atom is covalently bonded to its neighbors forming an extremely robust crystalline structure. Some carbon atoms in the lattice are substituted with boron to provide electrical conductivity. Modification strategies of doped diamond electrodes with metallic nanoparticles and/or electropolymerized films are of importance to impart novel characteristics or to improve the performance of diamond electrodes. Biofunctionalization of diamond films is also feasible to foster several useful bioanalytical applications. A plethora of opportunities for nanoscale analytical devices based on conducting diamond is anticipated in the very near future.

Enhanced hydrogen evolution reaction on hybrids of cobalt phosphide and molybdenum phosphide

NASA Astrophysics Data System (ADS)

Fang, Si-Ling; Chou, Tsu-Chin; Samireddi, Satyanarayana; Chen, Kuei-Hsien; Chen, Li-Chyong; Chen, Wei-Fu

2017-03-01

Production of hydrogen from water electrolysis has stimulated the search of sustainable electrocatalysts as possible alternatives. Recently, cobalt phosphide (CoP) and molybdenum phosphide (MoP) received great attention owing to their superior catalytic activity and stability towards the hydrogen evolution reaction (HER) which rivals platinum catalysts. In this study, we synthesize and study a series of catalysts based on hybrids of CoP and MoP with different Co/Mo ratio. The HER activity shows a volcano shape and reaches a maximum for Co/Mo = 1. Tafel analysis indicates a change in the dominating step of Volmer-Hyrovský mechanism. Interestingly, X-ray diffraction patterns confirmed a major ternary interstitial hexagonal CoMoP2 crystal phase is formed which enhances the electrochemical activity.

Yellow phosphorus-induced Brugada phenocopy.

PubMed

Dharanipradab, Mayakrishnan; Viswanathan, Stalin; Kumar, Gokula Raman; Krishnamurthy, Vijayalatchumy; Stanley, Daphene Divya

Metallic phosphides (of aluminum and phosphide) and yellow phosphorus are commonly used rodenticide compounds in developing countries. Toxicity of yellow phosphorus mostly pertains to the liver, kidney, heart, pancreas and the brain. Cardiotoxicity with associated Brugada ECG pattern has been reported only in poisoning with metallic phosphides. Brugada phenocopy and hepatic dysfunction were observed in a 29-year-old male following yellow phosphorus consumption. He had both type 1 (day1) and type 2 (day2) Brugada patterns in the electrocardiogram, which resolved spontaneously by the third day without hemodynamic compromise. Toxins such as aluminum and zinc phosphide have been reported to induce Brugada ECG patterns due to the generation of phosphine. We report the first case of yellow phosphorus-related Brugada phenocopy, without hemodynamic compromise or malignant arrhythmia. Copyright © 2017 Elsevier Inc. All rights reserved.

Synthesis of Large and Few Atomic Layers of Hexagonal Boron Nitride on Melted Copper

PubMed Central

Khan, Majharul Haque; Huang, Zhenguo; Xiao, Feng; Casillas, Gilberto; Chen, Zhixin; Molino, Paul J.; Liu, Hua Kun

2015-01-01

Hexagonal boron nitride nanosheets (h-BNNS) have been proposed as an ideal substrate for graphene-based electronic devices, but the synthesis of large and homogeneous h-BNNS is still challenging. In this contribution, we report a facile synthesis of few-layer h-BNNS on melted copper via an atmospheric pressure chemical vapor deposition process. Comparative studies confirm the advantage of using melted copper over solid copper as a catalyst substrate. The former leads to the formation of single crystalline h-BNNS that is several microns in size and mostly in mono- and bi-layer forms, in contrast to the polycrystalline and mixed multiple layers (1–10) yielded by the latter. This difference is likely to be due to the significantly reduced and uniformly distributed nucleation sites on the smooth melted surface, in contrast to the large amounts of unevenly distributed nucleation sites that are associated with grain boundaries and other defects on the solid surface. This synthesis is expected to contribute to the development of large-scale manufacturing of h-BNNS/graphene-based electronics. PMID:25582557

Enhancement in superconducting properties of Bi2Sr2Ca1Cu2O8+θ (Bi-2212) by means of boron oxide additive

NASA Astrophysics Data System (ADS)

Fallah-Arani, Hesam; Baghshahi, Saeid; Sedghi, Arman; Stornaiuolo, Daniela; Tafuri, Francesco; Riahi-Noori, Nastaran

2018-05-01

By using a solid state method, Bi2Sr2Ca1Cu2O8+θ (Bi-2212) polycrystalline samples were synthesized with the addition of boron oxide additive, with the aim of improving the performance of this compound for large scale applications. As the first step, the parameters for the solid state method, in particular sintering temperature, were optimized in order to obtain pure Bi-2212 samples with an optimal microstructure. Then, based on this optimization, the properties of the Bi2Sr2Ca1Cu2BxOy samples with x = 0.05, 0.1, and 0.2 were studied using several characterization techniques. It was found that the sample having x = 0.05 showed a magnetic hysteresis loop larger than that of the pure Bi-2212 sample and a critical current density value of 3.71 × 105 A/cm2, comparable to the best results found in the literature for Bi-2212, while preserving well-stacked and oriented grains.

Synthesis of large and few atomic layers of hexagonal boron nitride on melted copper.

PubMed

Khan, Majharul Haque; Huang, Zhenguo; Xiao, Feng; Casillas, Gilberto; Chen, Zhixin; Molino, Paul J; Liu, Hua Kun

2015-01-13

Hexagonal boron nitride nanosheets (h-BNNS) have been proposed as an ideal substrate for graphene-based electronic devices, but the synthesis of large and homogeneous h-BNNS is still challenging. In this contribution, we report a facile synthesis of few-layer h-BNNS on melted copper via an atmospheric pressure chemical vapor deposition process. Comparative studies confirm the advantage of using melted copper over solid copper as a catalyst substrate. The former leads to the formation of single crystalline h-BNNS that is several microns in size and mostly in mono- and bi-layer forms, in contrast to the polycrystalline and mixed multiple layers (1-10) yielded by the latter. This difference is likely to be due to the significantly reduced and uniformly distributed nucleation sites on the smooth melted surface, in contrast to the large amounts of unevenly distributed nucleation sites that are associated with grain boundaries and other defects on the solid surface. This synthesis is expected to contribute to the development of large-scale manufacturing of h-BNNS/graphene-based electronics.

A Facile Molecular Precursor Route to Metal Phosphide Nanoparticles and Their Evaluation as Hydrodeoxygenation Catalysts

DOE PAGES

Habas, Susan E.; Baddour, Frederick G.; Ruddy, Daniel A.; ...

2015-11-05

Metal phosphides have been identified as a promising class of materials for the catalytic upgrading of bio-oils, which are renewable and potentially inexpensive sources for liquid fuels. Herein, we report the facile synthesis of a series of solid, phase-pure metal phosphide nanoparticles (NPs) (Ni 2P, Rh 2P, and Pd 3P) utilizing commercially available, air-stable metal–phosphine complexes in a one-pot reaction. This single-source molecular precursor route provides an alternative method to access metal phosphide NPs with controlled phases and without the formation of metal NP intermediates that can lead to hollow particles. The formation of the Ni 2P NPs was shownmore » to proceed through an amorphous Ni–P intermediate, leading to the desired NP morphology and metal-rich phase. This low-temperature, rapid route to well-defined metal NPs is expected to have broad applicability to a variety of readily available or easily synthesized metal–phosphine complexes with high decomposition temperatures. Hydrodeoxygenation of acetic acid, an abundant bio-oil component, was performed to investigate H 2 activation and deoxygenation pathways under conditions that are relevant to ex situ catalytic fast pyrolysis (high temperatures, low pressures, and near-stoichiometric H 2 concentrations). The catalytic performance of the silica-supported metal phosphide NPs was compared to the analogous incipient wetness (IW) metal and metal phosphide catalysts over the range 200–500 °C. Decarbonylation was the primary pathway for H 2 incorporation in the presence of all of the catalysts except NP-Pd 3P, which exhibited minimal productive activity, and IW-Ni, which evolved H 2. The highly controlled NP-Ni2P and NP-Rh2P catalysts, which were stable under these conditions, behaved comparably to the IW-metal phosphides, with a slight shift to higher product onset temperatures, likely due to the presence of surface ligands. Most importantly, the NP-Ni 2P catalyst exhibited H 2 activation and incorporation, in contrast to IW-Ni, indicating that the behavior of the metal phosphide is significantly different from that of the parent metal, and more closely resembles that of noble metal catalysts.« less

Large-area homogeneous periodic surface structures generated on the surface of sputtered boron carbide thin films by femtosecond laser processing

NASA Astrophysics Data System (ADS)

Serra, R.; Oliveira, V.; Oliveira, J. C.; Kubart, T.; Vilar, R.; Cavaleiro, A.

2015-03-01

Amorphous and crystalline sputtered boron carbide thin films have a very high hardness even surpassing that of bulk crystalline boron carbide (≈41 GPa). However, magnetron sputtered B-C films have high friction coefficients (C.o.F) which limit their industrial application. Nanopatterning of materials surfaces has been proposed as a solution to decrease the C.o.F. The contact area of the nanopatterned surfaces is decreased due to the nanometre size of the asperities which results in a significant reduction of adhesion and friction. In the present work, the surface of amorphous and polycrystalline B-C thin films deposited by magnetron sputtering was nanopatterned using infrared femtosecond laser radiation. Successive parallel laser tracks 10 μm apart were overlapped in order to obtain a processed area of about 3 mm2. Sinusoidal-like undulations with the same spatial period as the laser tracks were formed on the surface of the amorphous boron carbide films after laser processing. The undulations amplitude increases with increasing laser fluence. The formation of undulations with a 10 μm period was also observed on the surface of the crystalline boron carbide film processed with a pulse energy of 72 μJ. The amplitude of the undulations is about 10 times higher than in the amorphous films processed at the same pulse energy due to the higher roughness of the films and consequent increase in laser radiation absorption. LIPSS formation on the surface of the films was achieved for the three B-C films under study. However, LIPSS are formed under different circumstances. Processing of the amorphous films at low fluence (72 μJ) results in LIPSS formation only on localized spots on the film surface. LIPSS formation was also observed on the top of the undulations formed after laser processing with 78 μJ of the amorphous film deposited at 800 °C. Finally, large-area homogeneous LIPSS coverage of the boron carbide crystalline films surface was achieved within a large range of laser fluences although holes are also formed at higher laser fluences.

Complete titanium substitution by boron in a tetragonal prism: exploring the complex boride series Ti(3-x)Ru(5-y)Ir(y)B(2+x) (0 ≤ x ≤ 1 and 1 < y < 3) by experiment and theory.

PubMed

Fokwa, Boniface P T; Hermus, Martin

2011-04-18

Polycrystalline samples and single crystals of four members of the new complex boride series Ti(3-x)Ru(5-y)Ir(y)B(2+x) (0 ≤ x ≤ 1 and 1 < y < 3) were synthesized by arc-melting the elements in a water-cooled copper crucible under an argon atmosphere. The new silvery phases were structurally characterized by powder and single-crystal X-ray diffraction as well as energy- and wavelength-dispersive X-ray spectroscopy analyses. They crystallize with the tetragonal Ti(3)Co(5)B(2) structure type in space group P4/mbm (No. 127). Tetragonal prisms of Ru/Ir atoms are filled with titanium in the boron-poorest phase (Ti(3)Ru(2.9)Ir(2.1)B(2)). Gradual substitution of titanium by boron then results in the successive filling of this site by a Ti/B mixture en route to the complete boron occupation, leading to the boron-richest phase (Ti(2)Ru(2.8)Ir(2.2)B(3)). Furthermore, both ruthenium and iridium share two sites in these structures, but a clear Ru/Ir site preference is found. First-principles density functional theory calculations (Vienna ab initio simulation package) on appropriate structural models (using a supercell approach) have provided more evidence on the stability of the boron-richest and -poorest phases, and the calculated lattice parameters corroborate very well with the experimentally found ones. Linear muffin-tin orbital atomic sphere approximation calculations further supported these findings through crystal orbital Hamilton population bonding analyses, which also show that the Ru/Ir-B and Ru/Ir-Ti heteroatomic interactions are mainly responsible for the structural stability of these compounds. Furthermore, some stable and unstable phases of this complex series could be predicted using the rigid-band model. According to the density of states analyses, all phases should be metallic conductors, as was expected from these metal-rich borides.

In situ TEM study of electron-beam radiation induced boron diffusion and effects on phase and microstructure evolution in nanostructured CoFeB/SiO2 thin film

NASA Astrophysics Data System (ADS)

Liu, B. H.; Teo, H. W.; Mo, Z. H.; Mai, Z. H.; Lam, J.; Xue, J. M.; Zhao, Y. Z.; Tan, P. K.

2017-01-01

Using in situ transmission electron microscopy (TEM), we studied boron diffusion and segregation in CoFeB/SiO2 nanostructured thin film stacks. We also investigated how these phenomena affected the phase and microstructure of CoFeB thin films under electron beam irradiation at 300 kV. A unique phase transformation was observed in CoFeB thin films under high-dose electron irradiation, from a polycrystalline Co3Fe to a unilateral amorphous phase of Co3Fe and nanocrystalline FexCo23-xB6. The unilateral amorphization of the Co3Fe film showed an electron-dose-rate sensitivity with a threshold dose rate. Detailed in situ TEM studies revealed that the unilateral amorphization of the Co3Fe film arose from boron segregation at the bottom of the Co3Fe thin film induced by radiation-enhanced diffusion of boron atoms that were displaced by electron knock-on effects. The radiation-induced nanocrystallization of FexCo23-xB6 was also found to be dose-rate sensitive with a higher electron beam current leading to earlier nucleation and more rapid grain growth. The nanocrystallization of FexCo23-xB6 occurred preferentially at the CoFeB/SiO2 interface. Kinetic studies by in situ TEM revealed the surface crystallization and diffusion-controlled nucleation and grain growth mechanisms. The radiation-enhanced atomic diffusivity and high-concentration of radiation-induced point defects at the Co3Fe/SiO2 interface enhanced the local short-range ordering of Fe, Co, and B atoms, favoring nucleation and grain growth of FexCo23-xB6 at the interface.

The complex metal-rich boride Ti1+xRh2-x+yIr3-yB3 (x=0.68, y=1.06) with a new structure type containing B4 zigzag fragments: Synthesis, crystal chemistry and theoretical calculations

NASA Astrophysics Data System (ADS)

Goerens, Christian; Fokwa, Boniface P. T.

2012-08-01

Polycrystalline samples and single crystals of the new complex boride Ti1+xRh2-x+yIr3-yB3 (x=0.68; y=1.06) were synthesized by arc-melting the elements in a water-cooled copper crucible under an argon atmosphere and characterized by X-Ray diffraction as well as EDX measurements. The crystal structure was refined on the basis of single crystal data. The new phase, which represents a new structure type containing trans zigzag B4 fragments as well as isolated boron atoms crystallizes in the orthorhombic space group Pbam (Nr. 55) with the lattice parameters a=8.620(1) Å, b=14.995(2) Å and c=3.234(1) Å. First-principles density functional theory calculations using the Vienna ab-initio simulation package (VASP) were performed on an appropriate structural model (using a supercell approach) and the experimental crystallographic data could be reproduced accurately. Based on this model, the density of states and crystal orbital Hamilton population (for bonding analysis) were calculated, using the linear muffin-tin orbital atomic sphere approximation (LMTO-ASA) method. According to these calculations, this metal-rich compound should be metallic, as expected. Furthermore, very strong boron-boron interactions are observed in the trans zigzag B4 fragment, which induce a clear differentiation of two types of metal-boron contacts with different strength. The observed three-dimensional metal-metal interaction is in good agreement with the predicted metallic behavior.

Structure-Activity Relationships for Pt-Free Metal Phosphide Hydrogen Evolution Electrocatalysts.

PubMed

Owens-Baird, Bryan; Kolen'ko, Yury V; Kovnir, Kirill

2018-05-23

In the field of renewable energy, the splitting of water into hydrogen and oxygen fuel gases using water electrolysis is a prominent topic. Traditionally, these catalytic processes have been performed by platinum-group metal catalysts, which are effective at promoting water electrolysis but expensive and rare. The search for an inexpensive and Earth-abundant catalyst has led to the development of 3d-transition-metal phosphides for the hydrogen evolution reaction. These catalysts have shown excellent activity and stability. In this review, we discuss the electronic and crystal structures of bulk and surface of selected Fe, Co, and Ni phosphides, and their relationships to the experimental catalytic activity. The various synthetic protocols towards the state-of-the-art transition metal phosphide electrocatalysts are also discussed. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Lattice Matched Carbide–Phosphide Composites with Superior Electrocatalytic Activity and Stability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Regmi, Yagya N.; Roy, Asa; King, Laurie A.

Composites of electrocatalytically active transition-metal compounds present an intriguing opportunity toward enhanced activity and stability. Here, to identify potentially scalable pairs of a catalytically active family of compounds, we demonstrate that phosphides of iron, nickel, and cobalt can be deposited on molybdenum carbide to generate nanocrystalline heterostructures. Composites synthesized via solvothermal decomposition of metal acetylacetonate salts in the presence of highly dispersed carbide nanoparticles show hydrogen evolution activities comparable to those of state-of-the-art non-noble metal catalysts. Investigation of the spent catalyst using high resolution microscopy and elemental analysis reveals that formation of carbide–phosphide composite prevents catalyst dissolution in acid electrolyte.more » Lattice mismatch between the two constituent electrocatalysts can be used to rationally improve electrochemical stability. Among the composites of iron, nickel, and cobalt phosphide, iron phosphide displays the lowest degree of lattice mismatch with molybdenum carbide and shows optimal electrochemical stability. Turnover rates of the composites are higher than that of the carbide substrate and compare favorably to other electrocatalysts based on earth-abundant elements. Lastly, our findings will inspire further investigation into composite nanocrystalline electrocatalysts that use molybdenum carbide as a stable catalyst support.« less

Responses of Siberian ferrets to secondary zinc phosphide poisoning

USGS Publications Warehouse

Hill, E.F.; Carpenter, J.W.

1982-01-01

The hazard of operational-type applications of zinc phosphide (Zn3P2) on a species closely related to the black-footed ferret (Mustela nigripes), was evaluated by feeding 16 Siberian ferrets (M. eversmanni) rats that had been killed by consumption of 2% zinc phosphide treated bait or by an oral dose of 40, 80, or 160 mg of Zn3P2. All ferrets accepted rats and a single emesis by each of 3 ferrets was the only evidence of acute intoxication. All ferrets learned to avoid eating gastrointestinal tracts of the rats. Subacute zinc phosphide toxicity in the ferrets was indicated by significant decreases (18-48%) in hemoglobin, increases of 35-91 % in serum iron, and elevated levels of serum globulin, cholesterol, and triglycerides. Hemoglobin/iron, urea nitrogen/creatinine, and albumin/globulin ratios also were altered by the treatments. This study demonstrated that Siberian ferrets, or other species with a sensitive emetic reflex, are afforded a degree of protection from acute zinc phosphide poisoning due to its emetic action. The importance of toxicity associated with possible respiratory, liver, and kidney damage indicated by altered blood chemistries is not known.

Scalable and Tunable Carbide-Phosphide Composite Catalyst System for the Thermochemical Conversion of Biomass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Regmi, Yagya; Rogers, Bridget; Labbe, Nicole

We have prepared composite materials of hexagonal nickel phosphide and molybdenum carbide (Mo2C) utilizing a simple and scalable two-stage synthesis method comprised of carbothermic reduction followed by hydrothermal incubation. We observe the monophasic hexagonal phosphide Ni2P in the composite at low phosphide-to-carbide (P:C) ratios. Upon increasing the proportion of P:C, the carbide surface becomes saturated, and we detect the emergence of a second hexagonal nickel phosphide phase (Ni5P4) upon annealing. We demonstrate that vapor-phase upgrading (VPU) of whole biomass via catalytic fast pyrolysis is achievable using the composite material as a catalyst, and we monitor the resulting product slates usingmore » pyrolysis gas chromatography/mass spectrometry. Our analysis of the product vapors indicates that variation of the P:C molar ratio in the composite material affords product slates of varying complexity and composition, which is indicated by the number of products and their relative proportions in the product slate. Our results demonstrate that targeted vapor product composition can be obtained, which can potentially be utilized to tune the composition of the bio-oil downstream.« less

Lattice Matched Carbide–Phosphide Composites with Superior Electrocatalytic Activity and Stability

DOE PAGES

Regmi, Yagya N.; Roy, Asa; King, Laurie A.; ...

2017-10-19

Composites of electrocatalytically active transition-metal compounds present an intriguing opportunity toward enhanced activity and stability. Here, to identify potentially scalable pairs of a catalytically active family of compounds, we demonstrate that phosphides of iron, nickel, and cobalt can be deposited on molybdenum carbide to generate nanocrystalline heterostructures. Composites synthesized via solvothermal decomposition of metal acetylacetonate salts in the presence of highly dispersed carbide nanoparticles show hydrogen evolution activities comparable to those of state-of-the-art non-noble metal catalysts. Investigation of the spent catalyst using high resolution microscopy and elemental analysis reveals that formation of carbide–phosphide composite prevents catalyst dissolution in acid electrolyte.more » Lattice mismatch between the two constituent electrocatalysts can be used to rationally improve electrochemical stability. Among the composites of iron, nickel, and cobalt phosphide, iron phosphide displays the lowest degree of lattice mismatch with molybdenum carbide and shows optimal electrochemical stability. Turnover rates of the composites are higher than that of the carbide substrate and compare favorably to other electrocatalysts based on earth-abundant elements. Lastly, our findings will inspire further investigation into composite nanocrystalline electrocatalysts that use molybdenum carbide as a stable catalyst support.« less

Scalable and Tunable Carbide-Phosphide Composite Catalyst System for the Thermochemical Conversion of Biomass

DOE PAGES

Regmi, Yagya; Rogers, Bridget; Labbe, Nicole; ...

2017-07-13

We have prepared composite materials of hexagonal nickel phosphide and molybdenum carbide (Mo2C) utilizing a simple and scalable two-stage synthesis method comprised of carbothermic reduction followed by hydrothermal incubation. We observe the monophasic hexagonal phosphide Ni2P in the composite at low phosphide-to-carbide (P:C) ratios. Upon increasing the proportion of P:C, the carbide surface becomes saturated, and we detect the emergence of a second hexagonal nickel phosphide phase (Ni5P4) upon annealing. We demonstrate that vapor-phase upgrading (VPU) of whole biomass via catalytic fast pyrolysis is achievable using the composite material as a catalyst, and we monitor the resulting product slates usingmore » pyrolysis gas chromatography/mass spectrometry. Our analysis of the product vapors indicates that variation of the P:C molar ratio in the composite material affords product slates of varying complexity and composition, which is indicated by the number of products and their relative proportions in the product slate. Our results demonstrate that targeted vapor product composition can be obtained, which can potentially be utilized to tune the composition of the bio-oil downstream.« less

Growth and Performance of GaInP/A1GaInP Visible Light Emitting Laser-Diodes,

DTIC Science & Technology

SEMICONDUCTOR LASERS, *EPITAXIAL GROWTH, ALLOYS, LAYERS, LOW PRESSURE, PRESSURE, QUALITY, ROOM TEMPERATURE, SUBSTRATES, GALLIUM PHOSPHIDES, INDIUM PHOSPHIDES, THERMAL PROPERTIES, ENERGY GAPS, ENERGY BANDS, VAPOR PHASES.

New reactions involving the oxidative O-, N-, and C-phosphorylation of organic compounds by phosphorus and phosphides in the presence of metal complexes

NASA Astrophysics Data System (ADS)

Dorfman, Ya A.; Aleshkova, M. M.; Polimbetova, G. S.; Levina, L. V.; Petrova, T. V.; Abdreimova, R. R.; Doroshkevich, D. M.

1993-09-01

The mechanisms of new catalytic reactions leading to the formation of di-, and tri-alkyl phosphates, di- and tri-alkyl phosphites, phosphoramidites, phosphazenes, phosphines, and phosphine oxides from hydrogen, copper, and zinc phosphides and white and red phosphorus are analysed. The mechanisms of the activation of the reactants by metal complexes and of the reactions involving the oxidative P-O, P-N, and P-C coupling of organic compounds to phosphorus and phosphides are considered. The bibliography includes 124 references.

Low Pressure Synthesis of Indium Phosphide,

DTIC Science & Technology

1982-04-01

UNCLASSIFIED F/G 713 M EEEEEEEEEII MEEMMMME W , 2~ h IW 𔃼 * ).I 2 MICROCOP RESOWI1OW TWS CHAT . . WROmNA RUIEJ MT STHDMS-W3-ALORMO TNDM- m &6.4. MM RO - TMS...pNode . M-V Semiconductor compound ’S.T o a.ek* !cm .. EImd’b lc a ..... . P Pocry sline large g rain .bgot of indiumn phosphide have been synthe- simed...indium temperature of 1003"C. 2. BACKGROUND .r. Indium phosphide is a compound composed of elements from the third and fifth columns of the periodic

Aluminum phosphide

Integrated Risk Information System (IRIS)

Aluminum phosphide ; CASRN 20859 - 73 - 8 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinoge

Indium phosphide nanowires and their applications in optoelectronic devices.

PubMed

Zafar, Fateen; Iqbal, Azhar

2016-03-01

Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II-VI and I-VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III-V indium phosphide (InP) nanowires (NWs) using vapour- and solution-phase approaches has been discussed. Doping and core-shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed.

Electroluminescence properties of LEDs based on electron-irradiated p-Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sobolev, N. A., E-mail: nick@sobolev.ioffe.rssi.ru; Shtel’makh, K. F.; Kalyadin, A. E.

2016-02-15

The electroluminescence (EL) in n{sup +}–p–p{sup +} light-emitting-diode (LED) structures based on Si irradiated with electrons and annealed at high temperature is studied. The LEDs are fabricated by the chemical- vapor deposition of polycrystalline silicon layers doped with high concentrations of boron and phosphorus. Transformation of the EL spectra with current in the LEDs is well described by six Gaussian curves. The peak positions of these curves are current-independent and equal to 1233, 1308, 1363, 1425, 1479, and 1520 nm. The dependences of the integrated EL intensity and of the full-width at half-maximum (FWHM) of the lines on current aremore » examined.« less

Superconducting MgB2 films via precursor postprocessing approach

NASA Astrophysics Data System (ADS)

Paranthaman, M.; Cantoni, C.; Zhai, H. Y.; Christen, H. M.; Aytug, T.; Sathyamurthy, S.; Specht, E. D.; Thompson, J. R.; Lowndes, D. H.; Kerchner, H. R.; Christen, D. K.

2001-06-01

Superconducting MgB2 films with Tc=38.6 K were prepared using a precursor-deposition, ex situ postprocessing approach. Precursor films of boron, ˜0.5 μm thick, were deposited onto Al2O3 (102) substrates by electron-beam evaporation; a postanneal at 890 °C in the presence of bulk MgB2 and Mg metal produced highly crystalline MgB2 films. X-ray diffraction indicated that the films exhibit some degree of c-axis alignment, but are randomly oriented in plane. Transport current measurements of the superconducting properties show high values of the critical current density and yield an irreversibility line that exceeds that determined by magnetic measurements on bulk polycrystalline materials.

Crystal-face-selective adsorption of Au nanoparticles onto polycrystalline diamond surfaces.

PubMed

Kondo, Takeshi; Aoshima, Shinsuke; Hirata, Kousuke; Honda, Kensuke; Einaga, Yasuaki; Fujishima, Akira; Kawai, Takeshi

2008-07-15

Crystal-face-selective adsorption of Au nanoparticles (AuNPs) was achieved on polycrystalline boron-doped diamond (BDD) surface via the self-assembly method combined with a UV/ozone treatment. To the best of our knowledge, this is the first report of crystal-face-selective adsorption on an inorganic solid surface. Hydrogen-plasma-treated BDD samples and those followed by UV/ozone treatment for 2 min or longer showed almost no adsorption of AuNP after immersion in the AuNP solution prepared by the citrate reduction method. However, the samples treated by UV/ozone for 10 s showed AuNP adsorption on their (111) facets selectively after the immersion. Moreover, the sample treated with UV/ozone for 40-60 s showed AuNP adsorption on the whole surface. These results indicate that the AuNP adsorption behavior can be controlled by UV/ozone treatment time. This phenomenon was highly reproducible and was applied to a two-step adsorption method, where AuNPs from different batches were adsorbed on the (111) and (100) surface in this order. Our findings may be of great value for the fabrication of advanced nanoparticle-based functional materials via bottom-up approaches with simple macroscale procedures.

Sintered Cr/Pt and Ni/Au ohmic contacts to B 12P 2

DOE PAGES

Frye, Clint D.; Kucheyev, Sergei O.; Edgar, James H.; ...

2015-04-09

With this study, icosahedral boron phosphide (B 12P 2) is a wide-bandgap semiconductor possessing interesting properties such as high hardness, chemical inertness, and the reported ability to self-heal from irradiation by high energy electrons. Here, the authors developed Cr/Pt and Ni/Au ohmic contacts to epitaxially grown B 12P 2 for materials characterization and electronic device development. Cr/Pt contacts became ohmic after annealing at 700 °C for 30 s with a specific contact resistance of 2×10 –4 Ω cm 2, as measured by the linear transfer length method. Ni/Au contacts were ohmic prior to any annealing, and their minimum specific contactmore » resistance was ~l–4 × 10 –4 Ω cm 2 after annealing over the temperature range of 500–800 °C. Rutherford backscattering spectrometry revealed a strong reaction and intermixing between Cr/Pt and B 12P 2 at 700 °C and a reaction layer between Ni and B 12P 2 thinner than ~25 nm at 500 °C.« less

Concept Definition for the Pest Management Component of the Pollution Abatement Management System (PAMS).

DTIC Science & Technology

1982-01-01

able to obtain * Aluminum phosphide, Bromacil, Carbaryl (Sevin), Chlordane, Chlorpyrifos (Oursban), Diazinon, Dichlorovos (DODYP), Malathion, Paraquat...Pentachloro- phenol (PCP), Propoxur (Baygon), Thiram, strychnine/strychnine sulfate, zinc phosphide, and 2,4-D. 10 sufficient data to respond to

Tool wear of (Ti, Al) N-coated polycrystalline cubic boron nitride compact in cutting of hardened steel

NASA Astrophysics Data System (ADS)

Wada, Tadahiro; Hanyu, Hiroyuki

2017-11-01

Polycrystalline cubic boron nitride compact (cBN) is effective tool material for cutting hardened steel. In addition to coated high speed steel and coated cemented carbide that has long been used for cutting materials, more recently, coated cBN has also been used. In this study, to verify the effectiveness of the (Ti,Al)N-coated cBN, which is formed on the substrate of cBN by the physical vapor deposition method, the hardened steel was turned with the (Ti,Al)N-coated cBN tool at a cutting speed of 3.33, 5.00 m/s, a feed rate of 0.3 mm/rev and a depth of cut of 0.1 mm. Furthermore, the uncoated cBN, which was the substrate of the (Ti,Al)N-coated, was also used. The tool wear of the cBN tools was experimentally investigated. The following results were obtained: (1) The contact area between the rake face and the chip of the (Ti,.Al)N-coated cBN tool was smaller than that of the uncoated cBN tool. (2) The tool wear of the (Ti,Al)N-coated cBN was smaller than that of uncoated cBN. (3) The wear progress of the (Ti,Al)N-coated cBN with the main element phase of the TiCN-Al, was slower than that of the (Ti,Al)N-coated cBN with the main element phase of the TiN-Al. (4) In the case of the high cutting speed of 5.00 m/s, the tool wear of the (Ti,Al)N-coated cBN was also smaller than that of uncoated cBN. The above results clarify that the (Ti,Al)N-coated cBN can be used as a tool material in high feed cutting of hardened steel.

Visible light electroluminescent diodes of indium-gallium phosphide

NASA Technical Reports Server (NTRS)

Clough, R.; Richman, D.; Tietjen, J.

1970-01-01

Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.

A case of accidental fatal aluminum phosphide poisoning involving humans and dogs.

PubMed

Behera, Chittaranjan; Krishna, Karthik; Bhardwaj, Daya Nand; Rautji, Ravi; Kumar, Arvind

2015-05-01

Aluminum phosphide is one of the commonest poisons encountered in agricultural areas, and manner of death in the victims is often suicidal and rarely homicidal or accidental. This paper presents an unusual case, where two humans (owner and housemaid) and eight dogs were found dead in the morning hours inside a room of a house, used as shelter for stray dogs. There was allegation by the son of the owner that his father had been killed. Crime scene visit by forensic pathologists helped to collect vital evidence. Autopsies of both the human victims and the dogs were conducted. Toxicological analysis of viscera, vomitus, leftover food, and chemical container at the crime scene tested positive for aluminum phosphide. The cause of death in both humans and dogs was aluminum phosphide poisoning. Investigation by police and the forensic approach to the case helped in ascertaining the manner of death, which was accidental. © 2015 American Academy of Forensic Sciences.

Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Flood, Dennis J.

1990-01-01

Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

Indium phosphide nanowires and their applications in optoelectronic devices

PubMed Central

Zafar, Fateen

2016-01-01

Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II–VI and I–VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III–V indium phosphide (InP) nanowires (NWs) using vapour- and solution-phase approaches has been discussed. Doping and core–shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed. PMID:27118920

Effects of ultraviolet light on B-doped CdS thin films prepared by spray pyrolysis method using perfume atomizer

NASA Astrophysics Data System (ADS)

Novruzov, V. D.; Keskenler, E. F.; Tomakin, M.; Kahraman, S.; Gorur, O.

2013-09-01

Boron doped CdS thin films were deposited by spray pyrolysis method using perfume atomizer. The effects of ultraviolet light on the structural, optical and electrical properties of B-doped CdS thin films were investigated as a function of dopant concentration (B/Cd). X-ray diffraction studies showed that all samples were polycrystalline nature with hexagonal structure. It was determined that the preferred orientation of non-illuminated samples changes from (1 0 1) to (0 0 2) with B concentration. The c lattice constant of films decreases from 6.810 Å to 6.661 Å with boron doping. The XRD peak intensity increased with the illumination for almost all the samples. The lattice parameters of B-doped samples remained nearly constant after illumination. It was found that the optical transmittance, photoluminescence spectra, resistivity and carrier concentration of the B-doped samples are stable after the illumination with UV light. Also the effects of UV light on B-doped CdS/Cu2S solar cell were investigated and it was determined that photoelectrical parameters of B-doped solar cell were more durable against the UV light.

Transition Metal Phosphide Nanoparticles Supported on SBA-15 as Highly Selective Hydrodeoxygenation Catalysts for the Production of Advanced Biofuels.

PubMed

Yang, Yongxing; Ochoa-Hernández, Cristina; de la Peña O'Shea, Víctor A; Pizarro, Patricia; Coronado, Juan M; Serrano, David P

2015-09-01

A series of catalysts constituted by nanoparticles of transition metal (M = Fe, Co, Ni and Mo) phosphides (TMP) dispersed on SBA-15 were synthesized by reduction of the corresponding metal phosphate precursors previously impregnated on the mesostructured support. All the samples contained a metal-loading of 20 wt% and with an initial M/P mole ratio of 1, and they were characterized by X-ray diffraction (XRD), N2 sorption, H2-TPR and transmission electron microscopy (TEM). Metal phosphide nanocatalysts were tested in a high pressure continuous flow reactor for the hydrodeoxygenation (HDO) of a methyl ester blend containing methyl oleate (C17H33-COO-CH3) as main component (70%). This mixture constitutes a convenient surrogate of triglycerides present in vegetable oils, and following catalytic hydrotreating yields mainly n-alkanes. The results of the catalytic assays indicate that Ni2P/SBA-15 catalyst presents the highest ester conversion, whereas the transformation rate is about 20% lower for MoP/SBA-15. In contrast, catalysts based on Fe and Co phosphides show a rather limited activity. Hydrocarbon distribution in the liquid product suggests that both hydrodeoxygenation and decarboxylation/decarbonylation reactions occur simultaneously over the different catalysts, although MoP/SBA-15 possess a selectivity towards hydrodeoxygenation exceeding 90%. Accordingly, the catalyst based on MoP affords the highest yield of n-octadecane, which is the preferred product in terms of carbon atom economy. Subsequently, in order to conjugate the advantages of both Ni and Mo phosphides, a series of catalysts containing variable proportions of both metals were prepared. The obtained results reveal that the mixed phosphides catalysts present a catalytic behavior intermediate between those of the monometallic phosphides. Accordingly, only marginal enhancement of the yield of n-octadecane is obtained for the catalysts with a Mo/Ni ratio of 3. Nevertheless, owing to this high selectivity for hydrodeoxygenation MoP/SBA-15 appears as a very promising catalyst for the production of advanced biofuels.

Strained quantum well photovoltaic energy converter

NASA Technical Reports Server (NTRS)

Freundlich, Alexandre (Inventor); Renaud, Philippe (Inventor); Vilela, Mauro Francisco (Inventor); Bensaoula, Abdelhak (Inventor)

1998-01-01

An indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output. A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.

Synthesis and Hydrodeoxygenation Properties of Ruthenium Phosphide Catalysts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bowker, Richard H.; Smith, Mica C.; Pease, Melissa

2011-07-01

Ru2P/SiO2 and RuP/SiO2 catalysts were prepared by the temperature-programmed reduction (TPR) of uncalcined precursors containing hypophosphite ion (H2PO2-) as the phosphorus source. The Ru2P/SiO2 and RuP/SiO2 catalysts had small average particle sizes (~4 nm) and high CO chemisorption capacities (90-110 umol/g). The Ru phosphide catalysts exhibited similar or higher furan (C4H4O) hydrodeoxygenation (HDO) activities than did a Ru/SiO2 catalyst, and the phosphide catalysts favored C4 hydrocarbon products while the Ru metal catalyst produced primarily C3 hydrocarbons.

Sinterless Fabrication Of Contact Pads On InP Devices

NASA Technical Reports Server (NTRS)

Weizer, Victor G.; Fatemi, Navid S.; Korenyi-Both, Andras L.

1995-01-01

Research has shown that with proper choice of material, low-resistance contact pads deposited on solar cells and other devices by improved technique that does not involve sintering. Research directed at understanding mechanisms involved in contact-sintering process has resulted in identification of special group of materials that includes phosphides of gold, silver, and nickel; specifically, Au(2)P(3), AgP(2), and Ni(3)P. Incorporation of phosphide interlayer substantially reduces resistivity between gold current-carrying layer and indium phosphide substrate. Further research indicated only very thin interlayer of any of these compounds needed to obtain low contact resistance, without subjecting contact to destructive sintering process.

Susan Habas | NREL

Science.gov Websites

chemical transformations Scalable methods for solution-phase nanomaterials synthesis Production of premium Patents "Metal Phosphide Catalysts and Methods for Making the Same and Uses Thereof," U.S . Patent No. 9,636,664 B1 (2017) "Metal Phosphide Catalysts and Methods for Making the Same and Uses

Black-tailed prairie dog populations one year after treatment with rodenticides

Treesearch

Anthony D. Apa; Daniel W. Uresk; Raymond L. Linder

1990-01-01

Three rodenticide treatments, zinc phosphide with prebait, strychnine with prebait, and strychnine without prebait, were applied to black-tailed prairie dog (Cynomys ludovicianus) colonies in west central South Dakota. Results were compared immediately posttreatment and for one year after application. Zinc phosphide was the most effective for...

Development of gallium aluminum phosphide electroluminescent diodes

NASA Technical Reports Server (NTRS)

Chicotka, R. J.; Lorenz, M. R.; Nethercot, A. H.; Pettit, G. D.

1972-01-01

Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sources is described. The preparation of this wide band gap semiconductor alloy, its physical properties (particularly the band structure, the electrical characteristics, and the light emitting properties) and work done on the fabrication of diode structures from these alloys are broadly covered.

Fabrication of hierarchical CoP nanosheet@microwire arrays via space-confined phosphidation toward high-efficiency water oxidation electrocatalysis under alkaline conditions.

PubMed

Ji, Xuqiang; Zhang, Rong; Shi, Xifeng; Asiri, Abdullah M; Zheng, Baozhan; Sun, Xuping

2018-05-03

In spite of recent advances in the synthesis of transition metal phosphide nanostructures, the simple fabrication of hierarchical arrays with more accessible active sites still remains a great challenge. In this Communication, we report a space-confined phosphidation strategy toward developing hierarchical CoP nanosheet@microwire arrays on nickel foam (CoP NS@MW/NF) using a Co(H2PO4)2·2H3PO4 microwire array as the precursor. The thermally stable nature of the anion in the precursor is key to hierarchical nanostructure formation. When used as a 3D electrode for water oxidation electrocatalysis, such CoP NS@MW/NF needs an overpotential as low as 296 mV to drive a geometrical catalytic current density of 100 mA cm-2 in 1.0 M KOH, outperforming all reported Co phosphide catalysts in alkaline media. This catalyst also shows superior long-term electrochemical durability, maintaining its activity for at least 65 h. This study offers us a general method for facile preparation of hierarchical arrays for applications.

Ingestion of gallium phosphide nanowires has no adverse effect on Drosophila tissue function.

PubMed

Adolfsson, Karl; Schneider, Martina; Hammarin, Greger; Häcker, Udo; Prinz, Christelle N

2013-07-19

Engineered nanoparticles have been under increasing scrutiny in recent years. High aspect ratio nanoparticles such as carbon nanotubes and nanowires have raised safety concerns due to their geometrical similarity to asbestos fibers. III-V epitaxial semiconductor nanowires are expected to be utilized in devices such as LEDs and solar cells and will thus be available to the public. In addition, clean-room staff fabricating and characterizing the nanowires are at risk of exposure, emphasizing the importance of investigating their possible toxicity. Here we investigated the effects of gallium phosphide nanowires on the fruit fly Drosophila melanogaster. Drosophila larvae and/or adults were exposed to gallium phosphide nanowires by ingestion with food. The toxicity and tissue interaction of the nanowires was evaluated by investigating tissue distribution, activation of immune response, genome-wide gene expression, life span, fecundity and somatic mutation rates. Our results show that gallium phosphide nanowires applied through the diet are not taken up into Drosophila tissues, do not elicit a measurable immune response or changes in genome-wide gene expression and do not significantly affect life span or somatic mutation rate.

Highly efficient photocatalytic H2 evolution using TiO2 nanoparticles integrated with electrocatalytic metal phosphides as cocatalysts

NASA Astrophysics Data System (ADS)

Song, Rui; Zhou, Wu; Luo, Bing; Jing, Dengwei

2017-09-01

In this work, electrocatalysts like the metal phosphides Ni2P, NiCoP, and FeP, can serve as cocatalysts of TiO2 to form efficient composite photocatalysts for hydrogen generation from an aqueous methanol solution. On comparing Ni2P, NiCoP, and FeP and optimizing their proportions, the NiCoP(1 wt%)/TiO2 composite was found to exhibit the highest activity toward photocatalytic H2 production (1.54 μmol h-1 mg-1), which is about thirteen times that of the naked TiO2 nanoparticles. Mott-Schottky (MS) analysis indicated that the large upward shift or band bending of the Fermi energy level (EF) in metal phosphides was responsible for the enhanced activity of the composites. The steady-state photoluminescence (PL) spectra and photocurrent transient response further confirmed that the enhanced photoinduced charge transfer and band separation after TiO2 was integrated with the metal phosphides. Thus, these electrocatalysts were shown to be efficient cocatalysts that can replace noble metals as low-cost photocatalytic H2 production.

Ingestion of gallium phosphide nanowires has no adverse effect on Drosophila tissue function

NASA Astrophysics Data System (ADS)

Adolfsson, Karl; Schneider, Martina; Hammarin, Greger; Häcker, Udo; Prinz, Christelle N.

2013-07-01

Engineered nanoparticles have been under increasing scrutiny in recent years. High aspect ratio nanoparticles such as carbon nanotubes and nanowires have raised safety concerns due to their geometrical similarity to asbestos fibers. III-V epitaxial semiconductor nanowires are expected to be utilized in devices such as LEDs and solar cells and will thus be available to the public. In addition, clean-room staff fabricating and characterizing the nanowires are at risk of exposure, emphasizing the importance of investigating their possible toxicity. Here we investigated the effects of gallium phosphide nanowires on the fruit fly Drosophila melanogaster. Drosophila larvae and/or adults were exposed to gallium phosphide nanowires by ingestion with food. The toxicity and tissue interaction of the nanowires was evaluated by investigating tissue distribution, activation of immune response, genome-wide gene expression, life span, fecundity and somatic mutation rates. Our results show that gallium phosphide nanowires applied through the diet are not taken up into Drosophila tissues, do not elicit a measurable immune response or changes in genome-wide gene expression and do not significantly affect life span or somatic mutation rate.

Mechanism of hydrodenitrogenation on phosphides and sulfides.

PubMed

Oyama, S Ted; Lee, Yong-Kul

2005-02-17

The mechanism of hydrodenitrogenation (HDN) of 2-methylpiperidine was studied over a silica-supported nickel phosphide catalyst (Ni2P/SiO2, Ni/P = 1/2) and a commercial Ni-Mo-S/Al2O3 catalyst in a three-phase trickle-bed reactor operated at 3.1 MPa and 450-600 K. Analysis of the product distribution as a function of contact time indicated that the reaction proceeded in both cases predominantly by a substitution mechanism, with a smaller contribution of an elimination mechanism. Fourier transform infrared spectroscopy (FTIR) of the 2-methylpiperidine indicated that at reaction conditions a piperidinium ion intermediate was formed on both the sulfide and the phosphide. It is concluded that the mechanism of HDN on nickel phosphide is very similar to that on sulfides. The mechanism on the nickel phosphide was also probed by comparing the reactivity of piperidine and several of its derivatives in the presence of 3000 ppm S. The relative elimination rates depended on the structure of the molecules, and followed the sequence: 4-methylpiperidine approximately piperidine > 3-methylpiperidine > 2,6-dimethylpiperidine > 2-methylpiperidine. [Chemical structure: see text] This order of reactivity was not dependent on the number of alpha-H or beta-H atoms in the molecules, ruling out their reaction through a single, simple mechanism. It is likely that the unhindered piperidine molecules reacted by an S(N)2 substitution process and the more hindered 2,6-dimethylpiperidine reacted by an E2 elimination process.

Gap/silicon Tandem Solar Cell with Extended Temperature Range

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A. (Inventor)

2006-01-01

A two-junction solar cell has a bottom solar cell junction of crystalline silicon, and a top solar cell junction of gallium phosphide. A three (or more) junction solar cell has bottom solar cell junctions of silicon, and a top solar cell junction of gallium phosphide. The resulting solar cells exhibit improved extended temperature operation.

Wavelength-scale Microlasers based on VCSEL-Photonic Crystal Architecture

DTIC Science & Technology

2015-01-20

molecular beam epitaxy , MBE). We will also assume the triangular lattice of air...Abbreviations, and Acronyms InP: indium phosphide InGaAsP: indium gallium arsenide phosphide MBE: molecular beam epiitaxy VCSEL : vertical cavity...substrates and were grown by MBE. Electron beam lithography and reactive ion etching was used to deep‐etch the holes of the PhC‐ VCSELS ,

Orientation of Zn3P2 films via phosphidation of Zn precursors

NASA Astrophysics Data System (ADS)

Katsube, Ryoji; Nose, Yoshitaro

2017-02-01

Orientation of solar absorber is an important factor to achieve high efficiency of thin film solar cells. In the case of Zn3P2 which is a promising absorber of low-cost and high-efficiency solar cells, (110)/(001) orientation was only reported in previous studies. We have successfully prepared (101)-oriented Zn3P2 films by phosphidation of (0001)-oriented Zn films at 350 °C. The phosphidation mechanism of Zn is discussed through STEM observations on the partially-reacted sample and the consideration of the relationship between the crystal structures of Zn and Zn3P2 . We revealed that (0001)-oriented Zn led to nucleation of (101)-oriented Zn3P2 due to the similarity in atomic arrangement between Zn and Zn3P2 . The electrical resistivity of the (101)-oriented Zn3P2 film was lower than those of (110)/(001)-oriented films, which is an advantage of the phosphidation technique to the growth processes in previous works. The results in this study demonstrated that well-conductive Zn3P2 films could be obtained by controlling orientations of crystal grains, and provide a guiding principle for microstructure control in absorber materials.

Hydrodeoxygenation of phenolic compounds to cycloalkanes over supported nickel phosphides

DOE PAGES

Yu, Zhiquan; Wang, Anjie; Liu, Shan; ...

2018-05-07

SiO 2, HZSM-5 and Al 2O 3 were used to support nickel phosphides to prepare hydrodeoxygenation (HDO) catalysts. The nickel loading was kept at 20 wt% while the Ni/P molar ratio was varied among 3, 2, and 1 in the preparation by incipient wetness impregnation. XRD characterization revealed that Ni 3P, Ni 12P 5, and Ni 2P as the major crystal phases were obtained at Ni/P ratio of 3, 2, and 1, respectively, on SiO 2 and HZSM-5. When Al 2O 3 was used as the support, nickel metal rather than nickel phosphides was generated. Among SiO 2-supported nickel phosphides,more » Ni 3P exhibited highest hydrogenation activity and catalytic performance in phenol HDO. Ni 3P/HZSM-5 showed the high catalytic performance in HDO of phenol as well as catechol and o-cresol, with Ni 3P as the hydrogenation site and the acid sites in HZSM-5 zeolite as the dehydration site. In conclusion, the strong acidity in HZSM-5 also facilitated the isomerization of cycloalkanes at elevated temperatures.« less

Superconducting and normal-state properties of the layered boride OsB2

NASA Astrophysics Data System (ADS)

Singh, Yogesh; Niazi, A.; Vannette, M. D.; Prozorov, R.; Johnston, D. C.

2007-12-01

OsB2 crystallizes in an orthorhombic structure (Pmmn) which contains alternate boron and osmium layers stacked along the c axis. The boron layers consist of puckered hexagons as opposed to the flat graphite-like boron layers in MgB2 . OsB2 is reported to become superconducting below 2.1K . We report results of the dynamic and static magnetic susceptibilities, electrical resistivity, Hall effect, heat capacity, and penetration depth measurements on arc-melted polycrystalline samples of OsB2 to characterize its superconducting and normal-state properties. These measurements confirmed that OsB2 becomes a bulk superconductor below Tc=2.1K . Our results indicate that OsB2 is a moderate-coupling type-II superconductor with an electron-phonon coupling constant λep≈0.4-0.5 , a small Ginzburg-Landau parameter κ˜1-2 , and an upper critical magnetic field Hc2(0.5K)˜420Oe for an unannealed sample and Hc2(1K)˜330Oe for an annealed sample. The temperature dependence of the superfluid density ns(T) for the unannealed sample is consistent with an s -wave superconductor with a slightly enhanced zero temperature gap Δ(0)=1.9kBTc and a zero temperature London penetration depth λ(0)=0.38(2)μm . The ns(T) data for the annealed sample show deviations from the predictions of the single-band s -wave BCS model. The magnetic, transport, and thermal properties in the normal state of isostructural and isoelectronic RuB2 , which is reported to become superconducting below 1.6K , are also reported.

Metal phosphide catalysts and methods for making the same and uses thereof

DOEpatents

Habas, Susan Ellen; Wang, Jun; Ruddy, Daniel A.; Baddour, Frederick Raymond Gabriel; Schaidle, Joshua

2017-05-02

The present disclosure relates to a method that includes heating a mixture that includes a metal phenylphosphine-containing precursor that includes at least one of Mo(PPh.sub.3).sub.2(CO).sub.4, Pd(PPh.sub.3).sub.4, Ru(PPh.sub.3).sub.3Cl.sub.2, Ru(PPh.sub.3).sub.2(CO).sub.2Cl.sub.2, Co(PPh.sub.3)(CO).sub.2(NO), and/or Rh(PPh.sub.3).sub.2(CO)Cl, a surfactant, and a solvent. The heating is to a target temperature to form a heated mixture containing a metal phosphide nanoparticle that includes at least one of MoP, Ru.sub.2P, Co.sub.2P, Rh.sub.2P, and/or Pd.sub.3P, and the metal phosphide nanoparticle is not hollow.

The Mechanism of Anaerobic (Microbial) Corrosion.

DTIC Science & Technology

1982-12-01

hydrogen sulfide reacts with hypophosphite (as well as phosphate and phosphite ) .to form, in the presence of mild steel, iron phosphide, simulating the...of phosphate and phosphite , but not hypophosphite, were observed to have become yellow in 24 hours. The yellow color disap- peared upon exposure to... product is an amorphous type of iron phosphide which can be !- detected b the formation of phos hine upon its acidification. Phosphine( in M IFO, 1473

Efficient water reduction with gallium phosphide nanowires

PubMed Central

Standing, Anthony; Assali, Simone; Gao, Lu; Verheijen, Marcel A.; van Dam, Dick; Cui, Yingchao; Notten, Peter H. L.; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.

2015-01-01

Photoelectrochemical hydrogen production from solar energy and water offers a clean and sustainable fuel option for the future. Planar III/V material systems have shown the highest efficiencies, but are expensive. By moving to the nanowire regime the demand on material quantity is reduced, and new materials can be uncovered, such as wurtzite gallium phosphide, featuring a direct bandgap. This is one of the few materials combining large solar light absorption and (close to) ideal band-edge positions for full water splitting. Here we report the photoelectrochemical reduction of water, on a p-type wurtzite gallium phosphide nanowire photocathode. By modifying geometry to reduce electrical resistance and enhance optical absorption, and modifying the surface with a multistep platinum deposition, high current densities and open circuit potentials were achieved. Our results demonstrate the capabilities of this material, even when used in such low quantities, as in nanowires. PMID:26183949

Friction Stir Spot Welding (FSSW) of Advanced High Strength Steel (AHSS)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santella, M. L.; Hovanski, Yuri; Pan, Tsung-Yu

Friction stir spot welding (FSSW) is applied to join advanced high strength steels (AHSS): galvannealed dual phase 780 MPa steel (DP780GA), transformation induced plasticity 780 MPa steel (TRIP780), and hot-stamped boron steel (HSBS). A low-cost Si3N4 ceramic tool was developed and used for making welds in this study instead of polycrystalline cubic boron nitride (PCBN) material used in earlier studies. FSSW has the advantages of solid-state, low-temperature process, and the ability of joining dissimilar grade of steels and thicknesses. Two different tool shoulder geometries, concave with smooth surface and convex with spiral pattern, were used in the study. Welds weremore » made by a 2-step displacement control process with weld time of 4, 6, and 10 seconds. Static tensile lap-shear strength achieved 16.4 kN for DP780GA-HSBS and 13.2kN for TRIP780-HSBS, above the spot weld strength requirements by AWS. Nugget pull-out was the failure mode of the joint. The joining mechanism was illustrated from the cross-section micrographs. Microhardness measurement showed hardening in the upper sheet steel (DP780GA or TRIP780) in the weld, but softening of HSBS in the heat-affect zone (HAZ). The study demonstrated the feasibility of making high-strength AHSS spot welds with low-cost tools.« less

Recent developments in turning hardened steels - A review

NASA Astrophysics Data System (ADS)

Sivaraman, V.; Prakash, S.

2017-05-01

Hard materials ranging from HRC 45 - 68 such as hardened AISI H13, AISI 4340, AISI 52100, D2 STL, D3 STEEL Steel etc., need super hard tool materials to machine. Turning of these hard materials is termed as hard turning. Hard turning makes possible direct machining of the hard materials and also eliminates the lubricant requirement and thus favoring dry machining. Hard turning is a finish turning process and hence conventional grinding is not required. Development of the new advanced super hard tool materials such as ceramic inserts, Cubic Boron Nitride, Polycrystalline Cubic Boron Nitride etc. enabled the turning of these materials. PVD and CVD methods of coating have made easier the production of single and multi layered coated tool inserts. Coatings of TiN, TiAlN, TiC, Al2O3, AlCrN over cemented carbide inserts has lead to the machining of difficult to machine materials. Advancement in the process of hard machining paved way for better surface finish, long tool life, reduced tool wear, cutting force and cutting temperatures. Micro and Nano coated carbide inserts, nanocomposite coated PCBN inserts, micro and nano CBN coated carbide inserts and similar developments have made machining of hardened steels much easier and economical. In this paper, broad literature review on turning of hardened steels including optimizing process parameters, cooling requirements, different tool materials etc., are done.

Fabrication and characterization of an all-diamond tubular flow microelectrode for electroanalysis.

PubMed

Hutton, Laura A; Vidotti, Marcio; Iacobini, James G; Kelly, Chris; Newton, Mark E; Unwin, Patrick R; Macpherson, Julie V

2011-07-15

The development of the first all-diamond hydrodynamic flow device for electroanalytical applications is described. Here alternate layers of intrinsic (insulating), conducting (heavily boron doped), and intrinsic polycrystalline diamond are grown to create a sandwich structure. By laser cutting a hole through the material, it is possible to produce a tubular flow ring electrode of a characteristic length defined by the thickness of the conducting layer (for these studies ∼90 μm). The inside of the tube can be polished to 17 ± 10 nm surface roughness using a diamond impregnanted wire resulting in a coplanar, smooth, all-diamond surface. The steady-state limiting current versus volume flow rate characteristics for the one electron oxidation of FcTMA(+) are in agreement with those expected for laminar flow in a tubular electrode geometry. For dopamine detection, it is shown that the combination of the reduced fouling properties of boron doped diamond, coupled with the flow geometry design where the products of electrolysis are washed away downstream of the electrode, completely eradicates fouling during electrolysis. This paves the way for incorporation of this flow design into online electroanalytical detection systems. Finally, the all diamond tubular flow electrode system described here provides a platform for future developments including the development of ultrathin ring electrodes, multiple apertures for increased current response, and multiple, individually addressable ring electrodes incorporated into the same flow tube.

Status of indium phosphide solar cell development at Spire

NASA Technical Reports Server (NTRS)

Spitzer, M. B.; Keavney, C. J.; Vernon, S. M.

1987-01-01

On-going development of indium phosphide solar cells for space applications is presented. The development is being carried out with a view towards both high conversion efficiency and simplicity of manufacture. The cell designs comprise the ion-implanted cell, the indium tin oxide top contact cell, and the epitaxial cell grown by metal organic chemical vapor deposition. Modelling data on the limit to the efficiency are presented and comparison is made to measured performance data.

Gallium phosphide energy converters

NASA Technical Reports Server (NTRS)

Sims, P. E.; DiNetta, Louis C.; DuganCavanagh, K.; Goetz, M. A.

1996-01-01

Betavoltaic power supplies based on gallium phosphide can supply long term low-level power with high reliability. Results are presented for GaP devices powered by Ni-63 and tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/cm(exp 2) have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. A small demonstration system has been assembled that generates and stores enough electricity to light up an LED.

RESEARCH ON PHYSICAL AND CHEMICAL PRINCIPLES AFFECTING HIGH TEMPERATURE MATERIALS FOR ROCKET NOZZLES. Quarterly Progress Report, April 1, 1963-June 30, 1963

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lowrie, R.

1963-10-31

The development and properties of refractory materials are described. Corrosion of zirconium carbide, niobium carbide, and niobium carbide-zirconium carbide systems by carbon dioxide and hydrochloric acid at 2250 deg C is reported. Corrosion of silver-tungsten alloys by carbon dioxide and oxygen at 2150 to 2440 deg K is summarized. Measurements of pyrolytic and ZTA graphite corrosion by carbon dioxide and oxygen at 2100 to 2800 deg K are shown. At 2300 deg C the rate of formation of methane from graphite and hydrogen is greatly reduced by the addition of helium, at constant hydrogen pressure. Up to 2000 deg Cmore » the effect of helium is small. The pyrolysis of methane on graphite at 2000 deg C is tabulated. Oxidation of tungsten to form WO/sub 2/ and WO/sub 3/ is reported. Vaporization of hafnium borides at 2297 to 2538 deg K is analyzed. The lattice parameters of ZrB/sub 2/ at of TiN/sub 0.6/ and TiN/sub 0.75/ are discussed. Powder metallurgical techniques are used to prepare TiB/sub 2/, ZrB/sub 2/, HfB/ sub 2/, NbB/sub 2/, a nd TaB/sub 2/ for detailed x-ray characterization. The electric conductivity of NbC-ZrC systems is reported. General descriptions are given of analytical techniques for free carbon in carbides and spectrographic methods for metallic impurities in carbides and borides. Preliminary roomtemperature measurements are reported of the elastic properties of polycrystalline ZrB/sub 2/. Titanium carbide is brazed to tungsten with a platinum-boron system. A largegrained polycrystalline specimen of ZrC is plastically deformed in creep at 2134 deg C. Metallographic and x-ray examinations of polycrystalline TiC specimens deformed in creep reveal an increasing development with deformation of subgrains having preferred orientation. (N.W.R.)« less

Integration of Indium Phosphide Based Devices with Flexible Substrates

NASA Astrophysics Data System (ADS)

Chen, Wayne Huai

2011-12-01

Flexible substrates have many advantages in applications where bendability, space, or weight play important roles or where rigid circuits are undesirable. However, conventional flexible thin film transistors are typically characterized as having low carrier mobility as compared to devices used in the electronics industry. This is in part due to the limited temperature tolerance of plastic flexible substrates, which commonly reduces the highest processing temperature to below 200°C. Common approaches of implementation include low temperature deposition of organic, amorphous, or polycrystalline semiconductors, all of which result in carrier mobility well below 100 cm2V -1s-1. High quality, single crystalline III-V semiconductors such as indium phosphide (InP), on the other hand, have carrier mobility well over 1000 cm 2V-1s-1 at room temperature, depending on carrier concentration. Recently, the ion-cut process has been used in conjunction with wafer bonding to integrate thin layers of III-V material onto silicon for optoelectronic applications. This approach has the advantage of high scalability, reusability of the initial III-V substrate, and the ability to tailor the location (depth) of the layer splitting. However, the transferred substrate usually suffers from hydrogen implantation damage. This dissertation demonstrates a new approach to enable integration of InP with various substrates, called the double-flip transfer process. The process combines ion-cutting with adhesive bonding. The problem of hydrogen implantation was overcome by patterned ion-cut transfer. In this type of transfer, areas of interest are shielded from implantation but still transferred by surrounding implanted regions. We found that patterned ion-cut transfer is strongly dependent upon crystal orientation and that using cleavage-plane oriented donors can be beneficial in transferring large areas of high quality semiconductor material. InP-based devices were fabricated to demonstrate the transfer process and test functionality following transfer. Passive devices (photodetectors) as well as active transistors were transferred and fabricated on various substrates. The transferred device layers were either implanted through with a blanket implant or protected with an ion-mask during implantation. Results demonstrate the viability of the double-flip ion-cut process in achieving very high electron mobility (˜2800 cm2V-1s-1) transistors on plastic flexible substrates.

Radiation and temperature effects in gallium arsenide, indium phosphide and silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Statler, R. L.

1987-01-01

The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.

Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Statler, R. L.

1987-01-01

The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solozhenko, Vladimir L.; Kurakevych, Oleksandr O.; Le Godec, Yann

Cubic boron phosphide, BP, has been studied in situ by X-ray diffraction and Raman scattering up to 55 GPa at 300 K in a diamond anvil cell. The bulk modulus of B{sub 0} = 174(2) GPa has been established, which is in excellent agreement with our ab initio calculations. The data on Raman shift as a function of pressure, combined with equation-of-state (EOS) data, allowed us to estimate the Grüneisen parameters of the TO and LO modes of zinc-blende structure, γ{sub G}{sup TO }= 1.26 and γ{sub G}{sup LO }= 1.13, just like in the case of other A{sup III}B{sup V} diamond-like phases, for which γ{sub G}{sup TO }> γ{submore » G}{sup LO }≅ 1. We also established that the pressure dependence of the effective electro-optical constant α is responsible for a strong change in relative intensities of the TO and LO modes from I{sub TO}/I{sub LO} ∼ 0.25 at 0.1 MPa to I{sub TO}/I{sub LO} ∼ 2.5 at 45 GPa, for which we also find excellent agreement between experiment and theory.« less

A Simple, General Synthetic Route toward Nanoscale Transition Metal Borides.

PubMed

Jothi, Palani R; Yubuta, Kunio; Fokwa, Boniface P T

2018-04-01

Most nanomaterials, such as transition metal carbides, phosphides, nitrides, chalcogenides, etc., have been extensively studied for their various properties in recent years. The similarly attractive transition metal borides, on the contrary, have seen little interest from the materials science community, mainly because nanomaterials are notoriously difficult to synthesize. Herein, a simple, general synthetic method toward crystalline transition metal boride nanomaterials is proposed. This new method takes advantage of the redox chemistry of Sn/SnCl 2 , the volatility and recrystallization of SnCl 2 at the synthesis conditions, as well as the immiscibility of tin with boron, to produce crystalline phases of 3d, 4d, and 5d transition metal nanoborides with different morphologies (nanorods, nanosheets, nanoprisms, nanoplates, nanoparticles, etc.). Importantly, this method allows flexibility in the choice of the transition metal, as well as the ability to target several compositions within the same binary phase diagram (e.g., Mo 2 B, α-MoB, MoB 2 , Mo 2 B 4 ). The simplicity and wide applicability of the method should enable the fulfillment of the great potential of this understudied class of materials, which show a variety of excellent chemical, electrochemical, and physical properties at the microscale. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Aqueous corrosion of phosphide minerals from iron meteorites: a highly reactive source of prebiotic phosphorus on the surface of the early Earth.

PubMed

Pasek, Matthew A; Lauretta, Dante S

2005-08-01

We present the results of an experimental study of aqueous corrosion of Fe-phosphide under conditions relevant to the early Earth. The results strongly suggest that iron meteorites were an important source of reactive phosphorus (P), a requirement for the formation of P-based life. We further demonstrate that iron meteorites were an abundant source of phosphide minerals early in Earth history. Phosphide corrosion was studied in five different solutions: deionized water, deionized water buffered with sodium bicarbonate, deionized water with dissolved magnesium and calcium chlorides, deionized water containing ethanol and acetic acid, and deionized water containing the chlorides, ethanol, and acetic acid. Experiments were performed in the presence of both air and pure Ar gas to evaluate the effect of atmospheric chemistry. Phosphide corrosion in deionized water results in a metastable mixture of mixed-valence, P-bearing ions including pyrophosphate and triphosphate, key components for metabolism in modern life. In a pH-buffered solution of NaHCO(3), the condensed and reduced species diphosphonate is an abundant corrosion product. Corrosion in ethanol- and acetic acid-containing solutions yields additional P-bearing organic molecules, including acetyl phosphonate and a cyclic triphosphorus molecule. Phosphonate is a major corrosion product of all experiments and is the only P-bearing molecule that persists in solutions with high concentrations of magnesium and calcium chlorides, which suggests that phosphonate may have been a primitive oceanic source of P. The stability and reactivity of phosphonate and hypophosphite in solution were investigated to elucidate reaction mechanisms and the role of mineral catalysts on P-solution chemistry. Phosphonate oxidation is rapid in the presence of Fe metal but negligible in the presence of magnetite and in the control sample. The rate of hypophosphite oxidation is independent of reaction substrate.

Second harmonic generation in gallium phosphide photonic crystal nanocavities with ultralow continuous wave pump power.

PubMed

Rivoire, Kelley; Lin, Ziliang; Hatami, Fariba; Masselink, W Ted; Vucković, Jelena

2009-12-07

We demonstrate second harmonic generation in photonic crystal nanocavities fabricated in the semiconductor gallium phosphide. We observe second harmonic radiation at 750 nm with input powers of only nanowatts coupled to the cavity and conversion effciency P(out)/P(2)(in,coupled)=430%/W. The large electronic band gap of GaP minimizes absorption loss, allowing effcient conversion. Our results are promising for integrated, low-power light sources and on-chip reduction of input power in other nonlinear processes.

Research of Tool Durability in Surface Plastic Deformation Processing by Burnishing of Steel Without Metalworking Fluids

NASA Astrophysics Data System (ADS)

Grigoriev, S. N.; Bobrovskij, N. M.; Melnikov, P. A.; Bobrovskij, I. N.

2017-05-01

Modern vector of development of machining technologies aimed at the transition to environmentally safe technologies - “green” technologies. The concept of “green technology” includes a set of signs of knowledge intended for practical use (“technology”). One of the ways to improve the quality of production is the use of surface plastic deformation (SPD) processing methods. The advantage of the SPD is a capability to combine effects of finishing and strengthening treatment. The SPD processing can replace operations: fine turning, grinding or polishing. The SPD is a forceful contact impact of indentor on workpiece’s surface in condition of their relative motion. It is difficult to implement the core technology of the SPD (burnishing, roller burnishing, etc.) while maintaining core technological advantages without the use of lubricating and cooling technology (metalworking fluids, MWF). The “green” SPD technology was developed by the authors for dry processing and has not such shortcomings. When processing with SPD without use of MWF requirements for tool’s durability is most significant, especially in the conditions of mass production. It is important to determine the period of durability of tool at the design stage of the technological process with the purpose of wastage preventing. This paper represents the results of durability research of natural and synthetic diamonds (polycrystalline diamond - ASPK) as well as precision of polycrystalline superabrasive tools made of dense boron nitride (DBN) during SPD processing without application of MWF.

Hot charcoal vomitus in aluminum phosphide poisoning - A case report of internal thermal reaction in aluminum phosphide poisoning and review of literature

PubMed Central

Mirakbari, Seyed Mostafa

2015-01-01

Aluminium phosphide (ALP) poisoning is a commonly encountered poisoning in emergency departments in most developing countries. Many papers have revealed metabolic derangements in this poisoning and also examined contributing factors leading to death, but only few have reported physical damage. Some case reports have described a complication that has been frequently termed ‘ignition’. The exact mechanism of this phenomenon has not been fully elucidated. An exothermic reaction during therapeutic administration of chemicals may contribute to this problem, but the incidence has occurred in the absence of treatment or drug administration. Here, we report a 34-year-old woman with ALP poisoning who presented with hot charcoal vomitus, a sign of internal thermal event, leading to the thermal burning of the patient's face and internal damage resulting in death. We reviewed all reported cases with similar complication to demonstrate varied characteristics of patients and to propose the possible mechanisms leading to this event. PMID:26257417

Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass.

PubMed

Emmer, Hal; Chen, Christopher T; Saive, Rebecca; Friedrich, Dennis; Horie, Yu; Arbabi, Amir; Faraon, Andrei; Atwater, Harry A

2017-07-05

Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF 2 vapor etch. The resulting GaP films have surface roughnesses below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 10 17  cm -3 that exhibited mobilities as high as 16 cm 2 V -1 s -1 . Due to their unique optical properties, these films hold much promise for use in advanced optical devices.

Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

DOE PAGES

Emmer, Hal; Chen, Christopher T.; Saive, Rebecca; ...

2017-07-05

Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF 2 vapor etch. The resulting GaP films have surface roughnessesmore » below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 10 17 cm -3 that exhibited mobilities as high as 16 cm 2V -1s -1. Therefore, due to their unique optical properties, these films hold much promise for use in advanced optical devices.« less

Cobalt phosphide based nanostructures as bifunctional electrocatalysts for low temperature alkaline water splitting

DOE PAGES

Lambert, Timothy N.; Vigil, Julian A.; Christensen, Ben

2016-08-22

Cobalt phosphide based thin films and nanoparticles were prepared by the thermal phosphidation of spinel Co 3O 4 precursor films and nanoparticles, respectively. CoP films were prepared with overall retention of the Co 3O 4 nanoplatelet morphology while the spherical/cubic Co 3O 4 and Ni 0.15Co 2.85O 4 nanoparticles were converted to nanorods or nanoparticles, respectively. The inclusion of nickel in the nanoparticles resulted in a 2.5 fold higher surface area leading to higher gravimetric performance. In each case high surface area structures were obtained with CoP as the primary phase. All materials were found to act as effective bifunctionalmore » electrocatalysts for both the HER and the OER and compared well to commercial precious metal benchmark materials in alkaline electrolyte. As a result, a symmetrical water electrolysis cell prepared from the CoP-based film operated at a low overpotential of 0.41-0.51 V.« less

Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emmer, Hal; Chen, Christopher T.; Saive, Rebecca

Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF 2 vapor etch. The resulting GaP films have surface roughnessesmore » below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 10 17 cm -3 that exhibited mobilities as high as 16 cm 2V -1s -1. Therefore, due to their unique optical properties, these films hold much promise for use in advanced optical devices.« less

Recent developments in indium phosphide space solar cell research

NASA Technical Reports Server (NTRS)

Brinker, David J.; Weinberg, Irving

1987-01-01

Recent developments and progress in indium phosphide solar cell research for space application are reviewed. Indium phosphide homojunction cells were fabricated in both the n+p and p+n configurations with total area efficiencies of 17.9 and 15.9% (air mass 0 and 25 C) respectively. Organometallic chemical vapor deposition, liquid phase epitaxy, ion implantation and diffusion techniques were employed in InP cell fabrication. A theoretical model of a radiation tolerant, high efficiency homojunction cell was developed. A realistically attainable AMO efficiency of 20.5% was calculated using this model with emitter and base doping of 6 x 10 to the 17th power and 5 x 10 the the 16th power/cu cm respectively. Cells of both configurations were irradiated with 1 MeV electrons and 37 MeV protons. For both proton and electron irradiation, the n+p cells are more radiation resistant at higher fluences than the p+n cells. The first flight module of four InP cells was assembled for the Living Plume Shield III satellite.

In-depth survey report of Early and Daniel Co. , Inc. , Louisville, Kentucky

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaebst, D.D.

1986-09-01

An in-depth industrial hygiene survey was conducted to evaluate worker exposures to phosphine during fumigation of grain at the Early and Daniel Co. grain elevator in Louisville, Kentucky. Stored grain was fumigated using aluminum phosphide. Aluminum-phosphide pellets were also added directly to the grain by the blender as it was poured into the storage containers. Local exhaust ventilation was used at points in the grain-moving system where grain dust was generated. Air samples were taken during full-shift periods at the breathing zone of the weighmaster, two bin floormen, and the blender. Area monitoring samples were also taken. If the operatorsmore » spend considerable time in the vicinity of a bin which is being filled with grain, there is a likelihood of far greater exposure levels being noted. According to the author, further studies of the use of phosphide products at other elevators should be conducted to determine the effect of environmental and process parameters on phosphine exposures.« less

Novel elastic, lattice dynamics and thermodynamic properties of metallic single-layer transition metal phosphides: 2H-M 2P (Mo2P, W2P, Nb2P and Ta2P)

NASA Astrophysics Data System (ADS)

Yin, Jiuren; Wu, Bozhao; Wang, Yanggang; Li, Zhimi; Yao, Yuanpeng; Jiang, Yong; Ding, Yanhuai; Xu, Fu; Zhang, Ping

2018-04-01

Recently, there has been a surge of interest in the research of two-dimensional (2D) phosphides due to their unique physical properties and wide applications. Transition metal phosphides 2H-M 2Ps (Mo2P, W2P, Nb2P and Ta2P) show considerable catalytic activity and energy storage potential. However, the electronic structure and mechanical properties of 2D 2H-M 2Ps are still unrevealed. Here, first-principles calculations are employed to investigate the lattice dynamics, elasticity and thermodynamic properties of 2H-M 2Ps. Results show that M 2Ps with lower stiffness exhibit remarkable lateral deformation under unidirectional loads. Due to the largest average Grüneisen parameter, single-layer Nb2P has the strongest anharmonic vibrations, resulting in the highest thermal expansion coefficient. The lattice thermal conductivities of Ta2P, W2P and Nb2P contradict classical theory, which would predict a smaller thermal conductivity due to the much heavier atom mass. Moreover, the calculations also demonstrate that the thermal conductivity of Ta2P is the highest as well as the lowest thermal expansion, owing to its weak anharmonic phonon scattering and the lowest average Grüneisen parameter. The insight provided by this study may be useful for future experimental and theoretical studies concerning 2D transition metal phosphide materials.

Electrocatalytic activity of cobalt phosphide-modified graphite felt toward VO2+/VO2+ redox reaction

NASA Astrophysics Data System (ADS)

Ge, Zhijun; Wang, Ling; He, Zhangxing; Li, Yuehua; Jiang, Yingqiao; Meng, Wei; Dai, Lei

2018-04-01

A novel strategy for improving the electro-catalytic properties of graphite felt (GF) electrode in vanadium redox flow battery (VRFB) is designed by depositing cobalt phosphide (CoP) onto GF surface. The CoP powder is synthesized by direct carbonization of Co-based zeolitic imidazolate framework (ZIF-67) followed by phosphidation. Cyclic voltammetry results confirm that the CoP-modified graphite felt (GF-CoP) electrode has excellent reversibility and electro-catalytic activity to the VO2+/VO2+ cathodic reaction compared with the pristine GF electrode. The cell using GF-CoP electrode shows apparently higher discharge capacity over that based on GF electrode. The cell using GF-CoP electrode has the capacity of 67.2 mA h at 100 mA cm-2, 32.7 mA h larger than that using GF electrode. Compared with cell using GF electrode, the voltage efficiency of the cell based on GF-CoP electrode increases by 5.9% and energy efficiency by 5.4% at a current density of 100 mA cm-2. The cell using GF-CoP electrode can reach 94.31% capacity retention after 50 cycles at a current density of 30 mA cm-2. The results show that the CoP can effectively promote the VO2+/VO2+ redox reaction, implying that metal phosphides are a new kind of potential catalytic materials for VRFB.

Protonation of a lanthanum phosphide-alkyl occurs at the P-La not the C-La bond: isolation of a cationic lanthanum alkyl complex.

PubMed

Izod, Keith; Liddle, Stephen T; Clegg, William

2004-08-07

Protonation of the heteroleptic, cyclometalated lanthanum phosphide complex [((Me3Si)2CH)(C6H4-2-CH2NMe2)P]La(THF)[P(C6H4-2-CH2NMe2)(CH(SiMe3)(SiMe2CH2))] with [Et3NH][BPh4] yields the cationic alkyllanthanum complex [(THF)4La[P(C6H4-2-CH2NMe2)(CH(SiMe3)(SiMe2CH2))

Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.

1987-01-01

Indium phosphide solar cells whose p-n junctions were processed by the open tube capped diffusion and by the closed tube uncapped diffusion of sulfur into Czochralski-grown p-type substrates are compared. Differences found in radiation resistance were attributed to the effects of increased base dopant concentration. Both sets of cells showed superior radiation resistance to that of gallium arsenide cells, in agreement with previous results. No correlation was, however, found between the open-circuit voltage and the temperature dependence of the maximum power.

Thin film photovoltaic device

DOEpatents

Catalano, Anthony W.; Bhushan, Manjul

1982-01-01

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

Preparation and characterization of a supported system of Ni2P/Ni12P5 nanoparticles and their use as the active phase in chemoselective hydrogenation of acetophenone

NASA Astrophysics Data System (ADS)

Costa, Dolly C.; Soldati, Analía L.; Pecchi, Gina; Bengoa, José Fernando; Marchetti, Sergio Gustavo; Vetere, Virginia

2018-05-01

Ni2P/Ni12P5 nanoparticles were obtained by thermal decomposition of nickel organometallic salt at low temperature. The use of different characterization techniques allowed us to determine that this process produced a mixture of two nickel phosphide phases: Ni2P and Ni12P5. These nickel phosphides nanoparticles, supported on mesoporous silica, showed activity and high selectivity for producing the hydrogenation of the acetophenone carbonyl group to obtain 1-phenylethanol. This is a first report that demonstrates the ability of supported Ni2P/Ni12P5 nanoparticles to produce the chemoselective hydrogenation of acetophenone. We attribute these special catalytic properties to the particular geometry of the Ni–P sites on the surface of the nanoparticles. This is an interesting result because the nickel phosphides have a wide composition range (from Ni3P to NiP3), with different crystallographic structures, therefore we think that different phases could be active and selective to hydrogenate many important molecules with more than one functional group.

Moringa oleifera extract (Lam) attenuates Aluminium phosphide-induced acute cardiac toxicity in rats.

PubMed

Gouda, Ahmed S; El-Nabarawy, Nagla A; Ibrahim, Samah F

2018-01-01

Moringa oleifera extract (Lam) has many antioxidant and protective properties. Objective: to investigate the antioxidant activities of Lam in counteracting the high oxidative stress caused by acute sub-lethal aluminium phosphide (AlP) intoxication in rat heart. These activities will be detected by histopathological examination and some oxidative stress biomarkers. a single sub-lethal dose of Alp (2 mg/kg body weight) was administered orally, and Lam was given orally at a dose (100 mg/kg body weight) one hour after receiving AlP to rats. aluminium phosphide caused significant cardiac histopathological changes with a significant increase in malondialdehyde (MDA); lipid peroxidation marker; and a significant depletion of antioxidant enzymes (catalase and glutathione reductase). However, treatment with Lam protected efficiently the cardiac tissue of intoxicated rats by increasing antioxidants levels with slight decreasing in MDA production compared to untreated group. This study suggested that Moringa oleifera extract could possibly restore the altered cardiac histopathology and some antioxidant power in AlP intoxicated rats, and it could even be used as adjuvant therapy against AlP-induced cardiotoxicity.

MOF-Derived Ultrathin Cobalt Phosphide Nanosheets as Efficient Bifunctional Hydrogen Evolution Reaction and Oxygen Evolution Reaction Electrocatalysts

PubMed Central

Li, Hong; Ke, Fei; Zhu, Junfa

2018-01-01

The development of a highly efficient and stable bifunctional electrocatalyst for water splitting is still a challenging issue in obtaining clean and sustainable chemical fuels. Herein, a novel bifunctional catalyst consisting of 2D transition-metal phosphide nanosheets with abundant reactive sites templated by Co-centered metal−organic framework nanosheets, denoted as CoP-NS/C, has been developed through a facile one-step low-temperature phosphidation process. The as-prepared CoP-NS/C has large specific surface area and ultrathin nanosheets morphology providing rich catalytic active sites. It shows excellent electrocatalytic performances for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) in acidic and alkaline media, with the Tafel slopes of 59 and 64 mV/dec and a current density of 10 mA/cm2 at the overpotentials of 140 and 292 mV, respectively, which are remarkably superior to those of CoP/C, CoP particles, and comparable to those of commercial noble-metal catalysts. In addition, the CoP-NS/C also shows good durability after a long-term test. PMID:29414838

Surface-oxidized cobalt phosphide used as high efficient electrocatalyst in activated carbon air-cathode microbial fuel cell

NASA Astrophysics Data System (ADS)

Yang, Tingting; Wang, Zhong; Li, Kexun; Liu, Yi; Liu, Di; Wang, Junjie

2017-09-01

Herein, we report a simplistic method to fabricate the surface-oxidized cobalt phosphide (CoP) nanocrystals (NCs), which is used as electrocatalyst for oxygen reduction reaction (ORR) in microbial fuel cell (MFC) for the first time. The corallite-like CoP NCs are successfully prepared by a hydrothermal reaction following a phosphating treatment in N2 atmosphere. When used as an ORR catalyst, cobalt phosphide shows comparable onset potential, inferior resistance, as well as a small Tafel slope with long-term stability in neutral media. The maximum power density of MFC embellished with 10% CoP reached 1914.4 ± 59.7 mW m-2, which is 108.5% higher than the control. The four-electron pathway, observed by the RDE, plays a crucial role in electrochemical catalytic activity. In addition, material characterizations indicate that the surface oxide layer (CoOx) around the metallic CoP core is important and beneficial for ORR. Accordingly, it can be expected that the as-synthesized CoP will be a promising candidate of the non-precious metal ORR electrocatalysts for electrochemical energy applications.

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode.

PubMed

Hamada, Hiroki

2017-07-28

Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01-1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orientations towards [1-11] and [11-1] directions grown on (100) gallium arsenide substrates, which were previously reported. The bandgap at 300 K is 1.791 eV. The value is the smallest ever reported, to our knowledge. The high performance transverse stabilized AlGaInP laser diodes with strain compensated quantum well structure, which is developed in 1992, have been successfully obtained by controlling the misorientation angle and directions of GaAs substrates. The structure is applied to quantum dots laser diodes. This paper also describes the development history of the quantum well and the quantum dots laser diodes, and their future prospects.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Zhiquan; Wang, Anjie; Liu, Shan

SiO 2, HZSM-5 and Al 2O 3 were used to support nickel phosphides to prepare hydrodeoxygenation (HDO) catalysts. The nickel loading was kept at 20 wt% while the Ni/P molar ratio was varied among 3, 2, and 1 in the preparation by incipient wetness impregnation. XRD characterization revealed that Ni 3P, Ni 12P 5, and Ni 2P as the major crystal phases were obtained at Ni/P ratio of 3, 2, and 1, respectively, on SiO 2 and HZSM-5. When Al 2O 3 was used as the support, nickel metal rather than nickel phosphides was generated. Among SiO 2-supported nickel phosphides,more » Ni 3P exhibited highest hydrogenation activity and catalytic performance in phenol HDO. Ni 3P/HZSM-5 showed the high catalytic performance in HDO of phenol as well as catechol and o-cresol, with Ni 3P as the hydrogenation site and the acid sites in HZSM-5 zeolite as the dehydration site. In conclusion, the strong acidity in HZSM-5 also facilitated the isomerization of cycloalkanes at elevated temperatures.« less

Phosphorization boosts the capacitance of mixed metal nanosheet arrays for high performance supercapacitor electrodes.

PubMed

Lan, Yingying; Zhao, Hongyang; Zong, Yan; Li, Xinghua; Sun, Yong; Feng, Juan; Wang, Yan; Zheng, Xinliang; Du, Yaping

2018-05-01

Binary transition metal phosphides hold immense potential as innovative electrode materials for constructing high-performance energy storage devices. Herein, porous binary nickel-cobalt phosphide (NiCoP) nanosheet arrays anchored on nickel foam (NF) were rationally designed as self-supported binder-free electrodes with high supercapacitance performance. Taking the combined advantages of compositional features and array architectures, the nickel foam supported NiCoP nanosheet array (NiCoP@NF) electrode possesses superior electrochemical performance in comparison with Ni-Co LDH@NF and NiCoO2@NF electrodes. The NiCoP@NF electrode shows an ultrahigh specific capacitance of 2143 F g-1 at 1 A g-1 and retained 1615 F g-1 even at 20 A g-1, showing excellent rate performance. Furthermore, a binder-free all-solid-state asymmetric supercapacitor device is designed, which exhibits a high energy density of 27 W h kg-1 at a power density of 647 W kg-1. The hierarchical binary nickel-cobalt phosphide nanosheet arrays hold great promise as advanced electrode materials for supercapacitors with high electrochemical performance.

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode

PubMed Central

Hamada, Hiroki

2017-01-01

Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01−1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orientations towards [1−11] and [11−1] directions grown on (100) gallium arsenide substrates, which were previously reported. The bandgap at 300 K is 1.791 eV. The value is the smallest ever reported, to our knowledge. The high performance transverse stabilized AlGaInP laser diodes with strain compensated quantum well structure, which is developed in 1992, have been successfully obtained by controlling the misorientation angle and directions of GaAs substrates. The structure is applied to quantum dots laser diodes. This paper also describes the development history of the quantum well and the quantum dots laser diodes, and their future prospects. PMID:28773227

Interaction potential for indium phosphide: a molecular dynamics and first-principles study of the elastic constants, generalized stacking fault and surface energies.

PubMed

Branicio, Paulo Sergio; Rino, José Pedro; Gan, Chee Kwan; Tsuzuki, Hélio

2009-03-04

Indium phosphide is investigated using molecular dynamics (MD) simulations and density-functional theory calculations. MD simulations use a proposed effective interaction potential for InP fitted to a selected experimental dataset of properties. The potential consists of two- and three-body terms that represent atomic-size effects, charge-charge, charge-dipole and dipole-dipole interactions as well as covalent bond bending and stretching. Predictions are made for the elastic constants as a function of density and temperature, the generalized stacking fault energy and the low-index surface energies.

Molecular fingerprint-region spectroscopy from 5 to 12  μm using an orientation-patterned gallium phosphide optical parametric oscillator.

PubMed

Maidment, Luke; Schunemann, Peter G; Reid, Derryck T

2016-09-15

We report a femtosecond optical parametric oscillator (OPO) based on the new semiconductor gain material orientation-patterned gallium phosphide (OP-GaP), which enables the production of high-repetition-rate femtosecond pulses spanning 5-12 μm with average powers in the few to tens of milliwatts range. This is the first example of a broadband OPO operating across the molecular fingerprint region, and we demonstrate its potential by conducting broadband Fourier-transform spectroscopy using water vapor and a polystyrene reference standard.

Electronic properties of hexagonal gallium phosphide: A DFT investigation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Vipin; Shah, Esha V.; Roy, Debesh R., E-mail: drr@ashd.svnit.ac.in

2016-05-23

A detail density functional investigation is performed to develop hexagonal 2D gallium phosphide material. The geometry, band structure and density of states (total and projected) of 2D hexagonal GaP are reported in detail. It is heartening to note that the developed material is identified as an indirect band gap semiconductor. The indirect gap for this material is predicted as 1.97 eV at K-Γ, and a direct gap of 2.28 eV at K point is achieved, which is very close to the reported direct band gap for zinc blende and buckled structures of GaP.

Thin film photovoltaic device

DOEpatents

Catalano, A.W.; Bhushan, M.

1982-08-03

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

Barringerite Fe2P from Pyrometamorphic Rocks of the Hatrurim Formation, Israel

NASA Astrophysics Data System (ADS)

Britvin, S. N.; Murashko, M. N.; Vapnik, E.; Polekhovsky, Yu. S.; Krivovichev, S. V.

2017-12-01

The article provides a detailed mineralogical and crystallochemical description (including refinement of the crystal structure) of the first finding of the phosphide class mineral barringerite, Fe2P, from terrestrial pyrometamorphic rocks of the Hatrurim Formation in Israel. The mineral occurs in the association of the so-called paralavas—initially silicate—carbonate sedimentary rocks that remelted during pyrometamorphic processes at a temperature above 1000°C and at a low pressure. Questions on the genesis and crystal chemistry of barringerite are discussed in connection with another polymorphic iron phosphide, allabogdanite (Fe,Ni)2P.

Low resistance contacts for shallow junction semiconductors

NASA Technical Reports Server (NTRS)

Fatemi, Navid S. (Inventor); Weizer, Victor G. (Inventor)

1994-01-01

A method of enhancing the specific contact resistivity in InP semiconductor devices and improved devices produced thereby are disclosed. Low resistivity values are obtained by using gold ohmic contacts that contain small amounts of gallium or indium and by depositing a thin gold phosphide interlayer between the surface of the InP device and the ohmic contact. When both the thin interlayer and the gold-gallium or gold-indium contact metallizations are used, ultra low specific contact resistivities are achieved. Thermal stability with good contact resistivity is achieved by depositing a layer of refractory metal over the gold phosphide interlayer.

Phosphide oxides RE2AuP2O (RE = La, Ce, Pr, Nd): synthesis, structure, chemical bonding, magnetism, and 31P and 139La solid state NMR.

PubMed

Bartsch, Timo; Wiegand, Thomas; Ren, Jinjun; Eckert, Hellmut; Johrendt, Dirk; Niehaus, Oliver; Eul, Matthias; Pöttgen, Rainer

2013-02-18

Polycrystalline samples of the phosphide oxides RE(2)AuP(2)O (RE = La, Ce, Pr, Nd) were obtained from mixtures of the rare earth elements, binary rare earth oxides, gold powder, and red phosphorus in sealed silica tubes. Small single crystals were grown in NaCl/KCl fluxes. The samples were studied by powder X-ray diffraction, and the structures were refined from single crystal diffractometer data: La(2)AuP(2)O type, space group C2/m, a = 1515.2(4), b = 424.63(8), c = 999.2(2) pm, β = 130.90(2)°, wR2 = 0.0410, 1050 F(2) values for Ce(2)AuP(2)O, and a = 1503.6(4), b = 422.77(8), c = 993.0(2) pm, β = 130.88(2)°, wR2 = 0.0401, 1037 F(2) values for Pr(2)AuP(2)O, and a = 1501.87(5), b = 420.85(5), c = 990.3(3) pm, β = 131.12(1)°, wR2 = 0.0944, 1143 F(2) values for Nd(2)AuP(2)O with 38 variables per refinement. The structures are composed of [RE(2)O](4+) polycationic chains of cis-edge-sharing ORE(4/2) tetrahedra and polyanionic strands [AuP(2)](4-), which contain gold in almost trigonal-planar phosphorus coordination by P(3-) and P(2)(4-) entities. The isolated phosphorus atoms and the P(2) pairs in La(2)AuP(2)O could clearly be distinguished by (31)P solid state NMR spectroscopy and assigned on the basis of a double quantum NMR technique. Also, the two crystallographically inequivalent La sites could be distinguished by static (139)La NMR in conjunction with theoretical electric field gradient calculations. Temperature-dependent magnetic susceptibility measurements show diamagnetic behavior for La(2)AuP(2)O. Ce(2)AuP(2)O and Pr(2)AuP(2)O are Curie-Weiss paramagnets with experimental magnetic moments of 2.35 and 3.48 μ(B) per rare earth atom, respectively. Their solid state (31)P MAS NMR spectra are strongly influenced by paramagnetic interactions. Ce(2)AuP(2)O orders antiferromagnetically at 13.1(5) K and shows a metamagnetic transition at 11.5 kOe. Pr(2)AuP(2)O orders ferromagnetically at 7.0 K.

Impact Chemistry and the Origin of Life

NASA Astrophysics Data System (ADS)

Melosh, H. J.; Pasek, M.

2012-12-01

Most discussions of global environmental effects of large impacts focus on changes deleterious to extant life. However, impacts may also produce changes that enhance or even create conditions beneficial to the origin of life. Many other authors have discussed impact delivery of organic molecules, and some have shown the shock synthesis of prebiotic molecules such as amino acids during impact. Our past work on the chemistry of impacts demonstrated that strong chemical reduction occurs in impact melt ejecta (spherules and melt droplets; tektites). Here we focus on the element phosphorus (P), whose role is crucial in biology as the backbone of DNA and RNA, and in metabolic biochemical energy transfer. Pasek previously showed that reduced P readily enters into interesting biological compounds with organic molecules in aqueous solution, and that these reduced P compounds may generate structures similar to sugar phosphates, which are critical to life as we know it. In this talk we argue that impact reduction of P transforms terrestrial and meteoritic phosphates bearing an oxidation state of +5 to the lower redox states of +3 (phosphites) and 0 as an alloy with metal (phosphides). We base this argument on studies of fulgurites—glasses formed by cloud-to-ground lightning—that bear phosphides and phosphites as major carriers of P. Fulgurite chemistry frequently parallels that of impact glasses. Additionally, thermodynamic calculations show that separation of an O-rich vapor from a melt readily results in the transformation of phosphate to phosphites and metal phosphides. These results are confirmed by the presence of metal phosphides within tektites. The impact reduction of phosphates followed by global dispersal of reduced P in the form of glassy droplets likely played a major role in the origin of life on Earth and perhaps on other young planets.

Essential elucidation for preparation of supported nickel phosphide upon nickel phosphate precursor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Xuguang, E-mail: liuxuguang@qust.edu.cn; Xu, Lei; Zhang, Baoquan

2014-04-01

Preparation of supported nickel phosphide (Ni{sub 2}P) depends on nickel phosphate precursor, generally related to its chemical composition and supports. Study of this dependence is essential and meaningful for the preparation of supported Ni{sub 2}P with excellent catalytic activity. The chemical nature of nickel phosphate precursor is revealed by Raman and UV–vis spectra. It is found that initial P/Ni mole ratio ≥0.8 prohibits the Ni-O-Ni bridge bonding (i.e., nickel oxide). This chemical bonding will not result in Ni{sub 2}P structure, verified by XRD characterization results. The alumina (namely, γ-Al{sub 2}O{sub 3}, θ-Al{sub 2}O{sub 3}, or α-Al{sub 2}O{sub 3}) with distinctmore » physiochemical properties also results in diverse chemical nature of nickel phosphate, and then different nickel phosphides. The influence of alumina support on producing Ni{sub 2}P was explained by the theory of surface energy heterogeneity, calculated by the NLDFT method based on N{sub 2}-sorption isotherm. The uniform surface energy of α-Al{sub 2}O{sub 3} results only in the nickel phosphosate precursor and thus the Ni{sub 2}P phase. - Graphical abstract: Surface energy heterogeneity in alumina (namely α-Al{sub 2}O{sub 3}, θ-Al{sub 2}O{sub 3}, and γ-Al{sub 2}O{sub 3}) supported multi-oxidic precursors with different reducibilities and thus diverse nickel phosphides (i.e., Ni{sub 3}P, Ni{sub 12}P{sub 5}, Ni{sub 2}P). - Highlights: • Preparing pure Ni{sub 2}P. • Elucidating nickel phosphate precursor. • Associating with surface energy.« less

Some aspects of precise laser machining - Part 2: Experimental

NASA Astrophysics Data System (ADS)

Grabowski, Marcin; Wyszynski, Dominik; Ostrowski, Robert

2018-05-01

The paper describes the role of laser beam polarization on quality of laser beam machined cutting tool edge. In micromachining the preparation of the cutting tools in play a key role on dimensional accuracy, sharpness and the quality of the cutting edges. In order to assure quality and dimensional accuracy of the cutting tool edge it is necessary to apply laser polarization control. In the research diode pumped Nd:YAG 532nm pulse laser was applied. Laser beam polarization used in the research was linear (horizontal, vertical). The goal of the carried out research was to describe impact of laser beam polarization on efficiency of the cutting process and quality of machined parts (edge, surface) made of polycrystalline diamond (PCD) and cubic boron nitride (cBN). Application of precise cutting tool in micromachining has significant impact on the minimum uncut chip thickness and quality of the parts. The research was carried within the INNOLOT program funded by the National Centre for Research and Development.

Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Weinberg, Irving; Flood, Dennis J.

1993-01-01

Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.

A gallium phosphide high-temperature bipolar junction transistor

NASA Technical Reports Server (NTRS)

Zipperian, T. E.; Dawson, L. R.; Chaffin, R. J.

1981-01-01

Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.

Efficient telecom to visible wavelength conversion in doubly resonant gallium phosphide microdisks

NASA Astrophysics Data System (ADS)

Lake, David P.; Mitchell, Matthew; Jayakumar, Harishankar; dos Santos, Laís Fujii; Curic, Davor; Barclay, Paul E.

2016-01-01

Resonant second harmonic generation between 1550 nm and 775 nm with normalized outside efficiency > 3.8 × 10 - 4 mW - 1 is demonstrated in a gallium phosphide microdisk supporting high-Q modes at visible ( Q ˜ 10 4 ) and infrared ( Q ˜ 10 5 ) wavelengths. The double resonance condition is satisfied for a specific pump power through intracavity photothermal temperature tuning using ˜ 360 μ W of 1550 nm light input to a fiber taper and coupled to a microdisk resonance. Power dependent efficiency consistent with a simple model for thermal tuning of the double resonance condition is observed.

Laser ablation synthesis of arsenic-phosphide Asm Pn clusters from As-P mixtures. Laser desorption ionisation with quadrupole ion trap time-of-flight mass spectrometry: The mass spectrometer as a synthesizer.

PubMed

Kubáček, Pavel; Prokeš, Lubomír; Pamreddy, Annapurna; Peña-Méndez, Eladia María; Conde, José Elias; Alberti, Milan; Havel, Josef

2018-05-30

Only a few arsenic phosphides are known. A high potential for the generation of new compounds is offered by Laser Ablation Synthesis (LAS) and when Laser Desorption Ionization (LDI) is coupled with simultaneous Time-Of-Flight Mass Spectrometry (TOFMS), immediate identification of the clusters can be achieved. LAS was used for the generation of arsenic phosphides via laser ablation of phosphorus-arsenic mixtures while quadrupole ion trap time-of-flight mass spectrometry (QIT-TOFMS) was used to acquire the mass spectra. Many new As m P n ± clusters (479 binary and 369 mono-elemental) not yet described in the literature were generated in the gas phase and their stoichiometry determined. The likely structures for some of the observed clusters arbitrary selected (20) were computed by density functional theory (DFT) optimization. LAS is an advantageous approach for the generation of new As m P n clusters, while mass spectrometry was found to be an efficient technique for the determination of cluster stoichiometry. The results achieved might inspire the synthesis of new materials. Copyright © 2018 John Wiley & Sons, Ltd.

Uranium distribution in pseudowollastonite slag from a phosphorus furnace

USGS Publications Warehouse

Young, Edward; Altschuler, Zalman S.

1956-01-01

Silicate slag from the Victor Chemical Company phosphorus furnace at Tarpon Springs, Fla., has been found to consist essentially of pseudowollastonite, α-CaSiO3. The first-formed crystals are euhedral laths which form a mesh making up most of the slag. As the slag continues to solidify, its composition changes slightly and more equant, subhedral crystals of pseudowollastonite are deposited within the framework of the earlier material. Finally, anherdral masses of fibrous, poorly crystallized material are deposited in the remaining pore spaces which are not always completely filled. Spherules of iron phosphide, Fe2P, occur very sparsely in the slag as inclusions from the immiscible iron phosphide melt. Uranium content increases in the later crystal products of the slag, and by heavy-liquid fractionation it has been possible to segregate partially the phases and to obtain a fourfold concentration of uranium in 5 percent of the material and a twofold concentration in 30 percent of the material. Nuclear-emulsion studies indicate that the last phases of the silicate slag are actually eight times as radioactive as the early phases. In addition, the iron phosphide spherules are comparably enriches in uranium.

General One-Pot Synthesis of Transition-Metal Phosphide/Nitrogen-Doped Carbon Hybrid Nanosheets as Ultrastable Anodes for Sodium-Ion Batteries.

PubMed

Li, Jingjing; Shi, Liang; Gao, Jingyu; Zhang, Genqiang

2018-01-26

Sodium-ion batteries (SIBs) have been considered as promising energy storage devices in grid-level applications, owing to their largely reduced cost compared with that of lithium-ion batteries. However, the practical application of SIBs has been seriously hindered because of the lack of appropriate anode materials, limited by the thermodynamics perspective, which is one of the central task at current stage. Herein, we have developed a general one-pot strategy for the synthesis of transition-metal phosphide (TMP) based hybrid nanosheets composed of carbon-coated TMP nanoparticles anchored to the surface of nitrogen-doped carbon nanosheets. This facile and cost-effective method is quite universal and holds potential to be further extended to other metal phosphide materials. Significantly, the hybrid nanosheet electrode possesses excellent sodium storage properties as anodes for SIBs, including high specific capacity, an ultra-long cycle life and a remarkable rate performance. This work makes a significant contribution to not only the synthetic methodology of TMP-carbon two-dimensional hybrid nanostructures, but also the application of TMP-based anodes for high-energy SIBs. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

MXP(M = Co/Ni)@carbon core-shell nanoparticles embedded in 3D cross-linked graphene aerogel derived from seaweed biomass for hydrogen evolution reaction.

PubMed

Zhao, Wentong; Lu, Xiaoqing; Selvaraj, Manickam; Wei, Wei; Jiang, Zhifeng; Ullah, Nabi; Liu, Jie; Xie, Jimin

2018-05-24

Low-cost electrocatalysts play an important role in the hydrogen evolution reaction (HER). Particularly, transition metal phosphides (TMPs) are widely applied in the development of HER electrocatalysts. To improve the poor electrochemical reaction kinetics of HER, we introduce a facile way to synthesize carbon core-shell materials containing cobalt phosphide nanoparticles embedded in different graphene aerogels (GAs) (CoP@C-NPs/GA-x (x = 5, 10 and 20)) using seaweed biomass as precursors. The synthesized CoP@C-NPs/GA-5 exhibits efficient catalytic activity with small overpotentials of 120 and 225 mV at current densities of 10 mA cm-2, along with the low Tafel slopes of 57 and 66 mV dec-1, for HER in acidic and alkaline electrolytes, respectively. Compared with carbon aerogel (CA) containing cobalt phosphide nanoparticles (CoP-NPs@CA), the stability of CoP@C-NPs/GA-5 coated with carbon-shells (∼0.8 nm) was significantly improved in acidic electrolytes. We also prepared carbon core-shell materials containing nickel phosphide nanoparticles embedded in GA (Ni2P@C-NPs/GA) to further expand this synthetic route. The graphene-Ni2P@C aerogel shows a similar morphology and better catalytic activity for HER in acidic and alkaline electrolytes. In this work, the robust three-dimensional (3D) GA matrix with abundant open pores and large surface area provides unblocked channels for electrolyte contact and electronic transfer and enables very close contact between the catalyst and electrolyte. The MxP@C core-shell structure prevents the inactivation of MxP NPs during HER processes, and the thin graphene oxide (GO) layers and 3D CA together build up a 3D conductive matrix, which not only adjusts the volume expansion of MxP NPs as well as preventing their aggregation, but also provides a 3D conductive pathway for rapid charge transfer processes. The present synthetic strategy for phosphides via in situ phosphorization with 3D GA can be extended to other novel high-performance catalysts. The simple synthesis and efficient catalytic activity of MXP@C-NPs/GA indicate good application prospects in HER.

Vapor phase growth technique of III-V compounds utilizing a preheating step

NASA Technical Reports Server (NTRS)

Olsen, Gregory Hammond (Inventor); Zamerowski, Thomas Joseph (Inventor); Buiocchi, Charles Joseph (Inventor)

1978-01-01

In the vapor phase epitaxy fabrication of semiconductor devices and in particular semiconductor lasers, the deposition body on which a particular layer of the laser is to be grown is preheated to a temperature about 40.degree. to 60.degree. C. lower than the temperature at which deposition occurs. It has been discovered that by preheating at this lower temperature there is reduced thermal decomposition at the deposition surface, especially for semiconductor materials such as indium gallium phosphide and gallium arsenide phosphide. A reduction in thermal decomposition reduces imperfections in the deposition body in the vicinity of the deposition surface, thereby providing a device with higher efficiency and longer lifetime.

Effects of Polyethylene Glycol and Citric Acid on Preparation and Hydrodechlorination Activity of Molybdenum Phosphide

NASA Astrophysics Data System (ADS)

Liu, Xiaomeng; Lu, Shaoxiang; Xu, Hanghui; Ren, Lili

2018-07-01

Molybdenum phosphide (MoP), modified by polyethylene glycol (PEG) and citric acid (CA), exhibited 2 to 3 times superior activity than the MoP modified by CA alone. And the optimal activity temperature was reduced from 500 to 450oC. The catalyst was fully characterized by a variety of techniques including X-ray diffraction (XRD), N2 adsorption-desorption isotherm, scanning electron microscopy (SEM), transmission electron microscopy (TEM). The results showed that the addition of PEG and CA increased the surface area of MoP and decreased the particle size of MoP. Furthermore, the reaction mechanism also has been discussed by combining the activity data and characterization results.

Theoretical prediction of sandwiched two-dimensional phosphide binary compound sheets with tunable bandgaps and anisotropic physical properties

NASA Astrophysics Data System (ADS)

Zhang, C. Y.; Yu, M.

2018-03-01

Atomic layers of GaP and InP binary compounds with unique anisotropic structural, electronic and mechanical properties have been predicted from first-principle molecular dynamics simulations. These new members of the phosphide binary compound family stabilize to a sandwiched two-dimensional (2D) crystalline structure with orthorhombic lattice symmetry and high buckling of 2.14 Å-2.46 Å. Their vibration modes are similar to those of phosphorene with six Raman active modes ranging from ˜80 cm-1 to 400 cm-1. The speeds of sound in their phonon dispersions reflect anisotropy in their elastic constants, which was further confirmed by their strong directional dependence of Young’s moduli and effective nonlinear elastic moduli. They show wide bandgap semiconductor behavior with fundamental bandgaps of 2.89 eV for GaP and 2.59 eV for InP, respectively, even wider than their bulk counterparts. Such bandgaps were found to be tunable under strain. In particular, a direct-indirect bandgap transition was found under certain strains along zigzag or biaxial orientations, reflecting their promising applications in strain-induced bandgap engineering in nanoelectronics and photovoltaics. Feasible pathways to realize these novel 2D phosphide compounds are also proposed.

Scalable Indium Phosphide Thin-Film Nanophotonics Platform for Photovoltaic and Photoelectrochemical Devices.

PubMed

Lin, Qingfeng; Sarkar, Debarghya; Lin, Yuanjing; Yeung, Matthew; Blankemeier, Louis; Hazra, Jubin; Wang, Wei; Niu, Shanyuan; Ravichandran, Jayakanth; Fan, Zhiyong; Kapadia, Rehan

2017-05-23

Recent developments in nanophotonics have provided a clear roadmap for improving the efficiency of photonic devices through control over absorption and emission of devices. These advances could prove transformative for a wide variety of devices, such as photovoltaics, photoelectrochemical devices, photodetectors, and light-emitting diodes. However, it is often challenging to physically create the nanophotonic designs required to engineer the optical properties of devices. Here, we present a platform based on crystalline indium phosphide that enables thin-film nanophotonic structures with physical morphologies that are impossible to achieve through conventional state-of-the-art material growth techniques. Here, nanostructured InP thin films have been demonstrated on non-epitaxial alumina inverted nanocone (i-cone) substrates via a low-cost and scalable thin-film vapor-liquid-solid growth technique. In this process, indium films are first evaporated onto the i-cone structures in the desired morphology, followed by a high-temperature step that causes a phase transformation of the indium into indium phosphide, preserving the original morphology of the deposited indium. Through this approach, a wide variety of nanostructured film morphologies are accessible using only control over evaporation process variables. Critically, the as-grown nanotextured InP thin films demonstrate excellent optoelectronic properties, suggesting this platform is promising for future high-performance nanophotonic devices.

Surface Chemistry in Cobalt Phosphide-Stabilized Lithium-Sulfur Batteries.

PubMed

Zhong, Yiren; Yin, Lichang; He, Peng; Liu, Wen; Wu, Zishan; Wang, Hailiang

2018-01-31

Chemistry at the cathode/electrolyte interface plays an important role for lithium-sulfur batteries in which stable cycling of the sulfur cathode requires confinement of the lithium polysulfide intermediates and their fast electrochemical conversion on the electrode surface. While many materials have been found to be effective for confining polysulfides, the underlying chemical interactions remain poorly understood. We report a new and general lithium polysulfide-binding mechanism enabled by surface oxidation layers of transition-metal phosphide and chalcogenide materials. We for the first time find that CoP nanoparticles strongly adsorb polysulfides because their natural oxidation (forming Co-O-P-like species) activates the surface Co sites for binding polysulfides via strong Co-S bonding. With a surface oxidation layer capable of confining polysulfides and an inner core suitable for conducting electrons, the CoP nanoparticles are thus a desirable candidate for stabilizing and improving the performance of sulfur cathodes in lithium-sulfur batteries. We demonstrate that sulfur electrodes that hold a high mass loading of 7 mg cm -2 and a high areal capacity of 5.6 mAh cm -2 can be stably cycled for 200 cycles. We further reveal that this new surface oxidation-induced polysulfide-binding scheme applies to a series of transition-metal phosphide and chalcogenide materials and can explain their stabilizing effects for lithium-sulfur batteries.

Hierarchical cobalt poly-phosphide hollow spheres as highly active and stable electrocatalysts for hydrogen evolution over a wide pH range

NASA Astrophysics Data System (ADS)

Wu, Tianli; Pi, Mingyu; Wang, Xiaodeng; Guo, Weimeng; Zhang, Dingke; Chen, Shijian

2018-01-01

Exploring highly-efficient and low-cost non-noble metal electrocatalyst toward the hydrogen evolution reaction (HER) is highly desired for renewable energy system but remains challenging. In this work, three dimensional hierarchical porous cobalt poly-phosphide hollow spheres (CoP3 HSs) were prepared by topotactic phosphidation of the cobalt-based precursor via vacuum encapsulation technique. As a porous HER cathode, the CoP3 HSs delivers remarkable electrocatalytic performance over the wide pH range. It needs overpotentials of -69 mV and -118 mV with a small Tafel slope of 51 mV dec-1 to obtain current densities of 10 mA cm-2 and 50 mA cm-2, respectively, and maintains its electrocatalytic performance over 30 h in acidic solution. In addition, CoP3 also exhibit superior electrocatalytic performance and stability under neutral and alkaline conditions for the HER. Both experimental measurements and density functional theory (DFT) calculations are performed to explore the mechanism behind the excellent HER performance. The results of our study make the porous CoP3 HSs as a promising electrocatalyst for practical applications toward energy conversion system and present a new way for designing and fabricating HER electrodes through high degree of phosphorization and nano-porous architecture.

Tailored surface structure of LiFePO4/C nanofibers by phosphidation and their electrochemical superiority for lithium rechargeable batteries.

PubMed

Lee, Yoon Cheol; Han, Dong-Wook; Park, Mihui; Jo, Mi Ru; Kang, Seung Ho; Lee, Ju Kyung; Kang, Yong-Mook

2014-06-25

We offer a brand new strategy for enhancing Li ion transport at the surface of LiFePO4/C nanofibers through noble Li ion conducting pathways built along reduced carbon webs by phosphorus. Pristine LiFePO4/C nanofibers composed of 1-dimensional (1D) LiFePO4 nanofibers with thick carbon coating layers on the surfaces of the nanofibers were prepared by the electrospinning technique. These dense and thick carbon layers prevented not only electrolyte penetration into the inner LiFePO4 nanofibers but also facile Li ion transport at the electrode/electrolyte interface. In contrast, the existing strong interactions between the carbon and oxygen atoms on the surface of the pristine LiFePO4/C nanofibers were weakened or partly broken by the adhesion of phosphorus, thereby improving Li ion migration through the thick carbon layers on the surfaces of the LiFePO4 nanofibers. As a result, the phosphidated LiFePO4/C nanofibers have a higher initial discharge capacity and a greatly improved rate capability when compared with pristine LiFePO4/C nanofibers. Our findings of high Li ion transport induced by phosphidation can be widely applied to other carbon-coated electrode materials.

SEM-EDX analysis of an unknown "known" white powder found in a shipping container from Peru

NASA Astrophysics Data System (ADS)

Albright, Douglas C.

2009-05-01

In 2008, an unknown white powder was discovered spilled inside of a shipping container of whole kernel corn during an inspection by federal inspectors in the port of Baltimore, Maryland. The container was detained and quarantined while a sample of the powder was collected and sent to a federal laboratory where it was screened using chromatography for the presence of specific poisons and pesticides with negative results. Samples of the corn kernels and the white powder were forwarded to the Food and Drug Administration, Forensic Chemistry Center for further analysis. Stereoscopic Light Microscopy (SLM), Scanning Electron Microscopy/Energy Dispersive X-ray Spectrometry (SEM/EDX), and Polarized Light Microscopy/Infrared Spectroscopy (PLM-IR) were used in the analysis of the kernels and the unknown powder. Based on the unique particle analysis by SLM and SEM as well as the detection of the presence of aluminum and phosphorous by EDX, the unknown was determined to be consistent with reacted aluminum phosphide (AlP). While commonly known in the agricultural industry, aluminum phosphide is relatively unknown in the forensic community. A history of the use and acute toxicity of this compound along with some very unique SEM/EDX analysis characteristics of aluminum phosphide will be discussed.

Novel tungsten phosphide embedded nitrogen-doped carbon nanotubes: A portable and renewable monitoring platform for anticancer drug in whole blood.

PubMed

Zhou, Haifeng; Ran, Guoxia; Masson, Jean-Francois; Wang, Chan; Zhao, Yuan; Song, Qijun

2018-05-15

Biosensors based on converting the concentration of analytes in complex samples into single electrochemical signals are attractive candidates as low cost, high-throughput, portable and renewable sensor platforms. Here, we describe a simple but practical analytical device for sensing an anticancer drug in whole blood, using the detection of methotrexate (MTX) as a model system. In this biosensor, a novel carbon-based composite, tungsten phosphide embedded nitrogen-doped carbon nanotubes (WP/N-CNT), was fixed to the electrode surface that supported redox cycling. The electronic transmission channel in nitrogen doped carbon nanotubes (N-CNT) and the synergistic effect of uniform distribution tungsten phosphide (WP) ensured that the electrode materials have outstanding electrical conductivity and catalytic performance. Meanwhile, the surface electronic structure also endows its surprisingly reproducible performance. To demonstrate portable operation for MTX sensing, screen printing electrodes (SPE) was modified with WP/N-CNT. The sensor exhibited low detection limits (45 nM), wide detection range (0.01-540 μM), good selectivity and long-term stability for the determination of MTX. In addition, the technique was successfully applied for the determination of MTX in whole blood. Copyright © 2018 Elsevier B.V. All rights reserved.

Clinical characteristics of zinc phosphide poisoning in Thailand.

PubMed

Trakulsrichai, Satariya; Kosanyawat, Natcha; Atiksawedparit, Pongsakorn; Sriapha, Charuwan; Tongpoo, Achara; Udomsubpayakul, Umaporn; Rittilert, Panee; Wananukul, Winai

2017-01-01

The objectives of this study were to describe the clinical characteristics and outcomes of poisoning by zinc phosphide, a common rodenticide in Thailand, and to evaluate whether these outcomes can be prognosticated by the clinical presentation. A 3-year retrospective cohort study was performed using data from the Ramathibodi Poison Center Toxic Exposure Surveillance System. In total, 455 poisonings were identified. Most were males (60.5%) and from the central region of Thailand (71.0%). The mean age was 39.91±19.15 years. The most common route of exposure was oral (99.3%). Most patients showed normal vital signs, oxygen saturation, and consciousness at the first presentation. The three most common clinical presentations were gastrointestinal (GI; 68.8%), cardiovascular (22.0%), and respiratory (13.8%) signs and symptoms. Most patients had normal blood chemistry laboratory results and chest X-ray findings at presentation. The median hospital stay was 2 days, and the mortality rate was 7%. Approximately 70% of patients underwent GI decontamination, including gastric lavage and a single dose of activated charcoal. In all, 31 patients were intubated and required ventilator support. Inotropic drugs were given to 4.2% of patients. Four moribund patients also received hyperinsulinemia-euglycemia therapy and intravenous hydrocortisone; however, all died. Patients who survived and died showed significant differences in age, duration from taking zinc phosphide to hospital presentation, abnormal vital signs at presentation (tachycardia, low blood pressure, and tachypnea), acidosis, hypernatremia, hyperkalemia, in-hospital acute kidney injury, in-hospital hypoglycemia, endotracheal tube intubation, and inotropic requirement during hospitalization ( P <0.05). Zinc phosphide poisoning causes fatalities. Most patients have mild symptoms, and GI symptoms are the most common. Patients who present with abnormal vital signs or electrolytes might have more severe poisoning and should be closely monitored and aggressively treated. All patients should be observed in the hospital for 2 days and followed up for cardiovascular and respiratory symptoms, electrolyte balances, kidney function, and blood glucose.

Pesticide poisoning.

PubMed

Goel, Ashish; Aggarwal, Praveen

2007-01-01

Acute poisoning with pesticides is a global public health problem and accounts for as many as 300,000 deaths worldwide every year. The majority of deaths occur due to exposure to organophosphates, organochlorines and aluminium phosphide. Organophosphate compounds inhibit acetylcholinesterase resulting in acute toxicity. Intermediate syndrome can develop in a number of patients and may lead to respiratory paralysis and death. Management consists of proper oxygenation, atropine in escalating doses and pralidoxime in high doses. It is Important to decontaminate the skin while taking precautions to avoid secondary contamination of health personnel. Organochlorine pesticides are toxic to the central nervous system and sensitize the myocardium to catecholamines. Treatment involves supportive care and avoiding exogenous sympathomimetic agents. Ingestion of paraquat causes severe inflammation of the throat, corrosive injury to the gastrointestinal tract, renal tubular necrosis, hepatic necrosis and pulmonary fibrosis. Administration of oxygen should be avoided as it produces more fibrosis. Use of immunosuppressive agents have improved outcome in patients with paraquat poisoning. Rodenticides include thallium, superwarfarins, barium carbonate and phosphides (aluminium and zinc phosphide). Alopecia is an atypical feature of thallium toxicity. Most exposures to superwarfarins are harmless but prolonged bleeding may occur. Barium carbonate Ingestion can cause severe hypokalaemia and respiratory muscle paralysis. Aluminium phosphide is a highly toxic agent with mortality ranging from 37% to 100%. It inhibits mitochondrial cytochrome c oxidase and leads to pulmonary and cardiac toxicity. Treatment is supportive with some studies suggesting a beneficial effect of magnesium sulphate. Pyrethroids and insect repellants (e.g. diethyltoluamide) are relatively harmless but can cause toxic effects to pulmonary and central nervous systems. Ethylene dibromide-a highly toxic, fumigant pesticide-produces oral ulcerations, followed by liver and renal toxicity, and is almost uniformly fatal. Physicians working in remote and rural areas need to be educated about early diagnosis and proper management using supportive care and antidotes, wherever available.

Thorium Copper Phosphides: More Diverse Metal-Phosphorus and Phosphorus-Phosphorus Interactions than U analogues

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, Geng Bang; Malliakas, Christos D.; Lin, Jian

To explore the chemical analogy between thorium and heavier actinides in soft anionic environments, three new thorium phosphides (ThCuP 2, beta-ThCu 2P 2, and ThCu 5P 3) have been prepared through solid-state reactions using CuI as a reaction promoter. The structure of ThCuP 2 can be described as a filled UTe 2-type with both dimeric P 2 4- and monomeric P 3- anions, in which Th is coordinated by eight P atoms in a bicapped trigonal prismatic arrangement and Cu is tetrahedrally coordinated by four P atoms. β-ThCu 2P 2 contains only P 3- anions and is isostructural with BaCumore » 2S 2. In this structure, Th is coordinated by seven P atoms in monocapped trigonal prismatic geometry and Cu is tetrahedrally coordinated by four P atoms. ThCu 5P 3 adopts the YCo 5P 3-type structure consisting of P 3- anions. This structure contains Th atoms coordinated by six P atoms in a trigonal prismatic arrangement and Cu atoms that are either tetrahedrally coordinated by four P atoms or square pyramidally coordinated by five P atoms. Electric resistivity measurements and electronic structure calculations on β-ThCu 2P 2 indicate a metal. These new compounds may be charge-balanced and formulated as Th 4+Cu +(P 2 4-) 1/2P 3-, Th 4+(Cu +) 2(P 3-) 2, and Th 4+(Cu +) 5(P 3-) 3, respectively. The structural, bonding, and property relationships between these Th compounds and related actinide and rare-earth phases are discussed. In conclusion, titled compounds display more diverse ion-ion interactions and different electronic structures from those in UCuP 2 and UCu 2P 2 that were synthesized under similar experimental conditions, suggesting divergence of thorium-phosphide chemistry from uranium-phosphide chemistry.« less

Thorium Copper Phosphides: More Diverse Metal-Phosphorus and Phosphorus-Phosphorus Interactions than U analogues

DOE PAGES

Jin, Geng Bang; Malliakas, Christos D.; Lin, Jian

2017-09-28

To explore the chemical analogy between thorium and heavier actinides in soft anionic environments, three new thorium phosphides (ThCuP 2, beta-ThCu 2P 2, and ThCu 5P 3) have been prepared through solid-state reactions using CuI as a reaction promoter. The structure of ThCuP 2 can be described as a filled UTe 2-type with both dimeric P 2 4- and monomeric P 3- anions, in which Th is coordinated by eight P atoms in a bicapped trigonal prismatic arrangement and Cu is tetrahedrally coordinated by four P atoms. β-ThCu 2P 2 contains only P 3- anions and is isostructural with BaCumore » 2S 2. In this structure, Th is coordinated by seven P atoms in monocapped trigonal prismatic geometry and Cu is tetrahedrally coordinated by four P atoms. ThCu 5P 3 adopts the YCo 5P 3-type structure consisting of P 3- anions. This structure contains Th atoms coordinated by six P atoms in a trigonal prismatic arrangement and Cu atoms that are either tetrahedrally coordinated by four P atoms or square pyramidally coordinated by five P atoms. Electric resistivity measurements and electronic structure calculations on β-ThCu 2P 2 indicate a metal. These new compounds may be charge-balanced and formulated as Th 4+Cu +(P 2 4-) 1/2P 3-, Th 4+(Cu +) 2(P 3-) 2, and Th 4+(Cu +) 5(P 3-) 3, respectively. The structural, bonding, and property relationships between these Th compounds and related actinide and rare-earth phases are discussed. In conclusion, titled compounds display more diverse ion-ion interactions and different electronic structures from those in UCuP 2 and UCu 2P 2 that were synthesized under similar experimental conditions, suggesting divergence of thorium-phosphide chemistry from uranium-phosphide chemistry.« less

Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes R.

1996-03-26

A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.

Rhenium Alloys as Ductile Substrates for Diamond Thin-Film Electrodes.

PubMed

Halpern, Jeffrey M; Martin, Heidi B

2014-02-01

Molybdenum-rhenium (Mo/Re) and tungsten-rhenium (W/Re) alloys were investigated as substrates for thin-film, polycrystalline boron-doped diamond electrodes. Traditional, carbide-forming metal substrates adhere strongly to diamond but lose their ductility during exposure to the high-temperature (1000°C) diamond, chemical vapor deposition environment. Boron-doped semi-metallic diamond was selectively deposited for up to 20 hours on one end of Mo/Re (47.5/52.5 wt.%) and W/Re (75/25 wt.%) alloy wires. Conformal diamond films on the alloys displayed grain sizes and Raman signatures similar to films grown on tungsten; in all cases, the morphology and Raman spectra were consistent with well-faceted, microcrystalline diamond with minimal sp 2 carbon content. Cyclic voltammograms of dopamine in phosphate-buffered saline (PBS) showed the wide window and low baseline current of high-quality diamond electrodes. In addition, the films showed consistently well-defined, dopamine electrochemical redox activity. The Mo/Re substrate regions that were uncoated but still exposed to the diamond-growth environment remained substantially more flexible than tungsten in a bend-to-fracture rotation test, bending to the test maximum of 90° and not fracturing. The W/Re substrates fractured after a 27° bend, and the tungsten fractured after a 21° bend. Brittle, transgranular cleavage fracture surfaces were observed for tungsten and W/Re. A tension-induced fracture of the Mo/Re after the prior bend test showed a dimple fracture with a visible ductile core. Overall, the Mo/Re and W/Re alloys were suitable substrates for diamond growth. The Mo/Re alloy remained significantly more ductile than traditional tungsten substrates after diamond growth, and thus may be an attractive metal substrate for more ductile, thin-film diamond electrodes.

Rhenium Alloys as Ductile Substrates for Diamond Thin-Film Electrodes

PubMed Central

Halpern, Jeffrey M.; Martin, Heidi B.

2014-01-01

Molybdenum-rhenium (Mo/Re) and tungsten-rhenium (W/Re) alloys were investigated as substrates for thin-film, polycrystalline boron-doped diamond electrodes. Traditional, carbide-forming metal substrates adhere strongly to diamond but lose their ductility during exposure to the high-temperature (1000°C) diamond, chemical vapor deposition environment. Boron-doped semi-metallic diamond was selectively deposited for up to 20 hours on one end of Mo/Re (47.5/52.5 wt.%) and W/Re (75/25 wt.%) alloy wires. Conformal diamond films on the alloys displayed grain sizes and Raman signatures similar to films grown on tungsten; in all cases, the morphology and Raman spectra were consistent with well-faceted, microcrystalline diamond with minimal sp2 carbon content. Cyclic voltammograms of dopamine in phosphate-buffered saline (PBS) showed the wide window and low baseline current of high-quality diamond electrodes. In addition, the films showed consistently well-defined, dopamine electrochemical redox activity. The Mo/Re substrate regions that were uncoated but still exposed to the diamond-growth environment remained substantially more flexible than tungsten in a bend-to-fracture rotation test, bending to the test maximum of 90° and not fracturing. The W/Re substrates fractured after a 27° bend, and the tungsten fractured after a 21° bend. Brittle, transgranular cleavage fracture surfaces were observed for tungsten and W/Re. A tension-induced fracture of the Mo/Re after the prior bend test showed a dimple fracture with a visible ductile core. Overall, the Mo/Re and W/Re alloys were suitable substrates for diamond growth. The Mo/Re alloy remained significantly more ductile than traditional tungsten substrates after diamond growth, and thus may be an attractive metal substrate for more ductile, thin-film diamond electrodes. PMID:25404788

Controlled sp(2) Functionalization of Boron Doped Diamond as a Route for the Fabrication of Robust and Nernstian pH Electrodes.

PubMed

Ayres, Zoë J; Borrill, Alexandra J; Newland, Jonathan C; Newton, Mark E; Macpherson, Julie V

2016-01-05

The development of a voltammetric boron doped diamond (BDD) pH sensor is described. To obtain pH sensitivity, laser micromachining (ablation) is utilized to introduce controlled regions of sp(2) carbon into a high quality polycrystalline BDD electrode. The resulting sp(2) carbon is activated to produce electrochemically reducible quinone groups using a high temperature acid treatment, followed by anodic polarization. Once activated, no further treatment is required. The quinone groups show a linear (R(2) = 0.999) and Nernstian (59 mV/(pH unit)) pH-dependent reductive current-voltage response over a large analyzable pH range, from pH 2 to pH 12. Using the laser approach, it is possible to optimize sp(2) coverage on the BDD surface, such that a measurable pH response is recorded, while minimizing background currents arising from oxygen reduction reactions on sp(2) carbon in the potential region of interest. This enables the sensor to be used in aerated solutions, boding well for in situ analysis. The voltammetric response of the electrode is not compromised by the presence of excess metal ions such as Pb(2+), Cd(2+), Cu(2+), and Zn(2+). Furthermore, the pH sensor is stable over a 3 month period (the current time period of testing), can be stored in air between measurements, requires no reactivation of the surface between measurements, and can be reproducibly fabricated using the proposed approach. The efficacy of this pH sensor in a real-world sample is demonstrated with pH measurements in U.K. seawater.

Thermoluminescence properties of Li2B4O7:Cu, B phosphor synthesized using solution combustion technique

NASA Astrophysics Data System (ADS)

Ozdemir, A.; Altunal, V.; Kurt, K.; Depci, T.; Yu, Y.; Lawrence, Y.; Nur, N.; Guckan, V.; Yegingil, Z.

2017-12-01

To determine the effects of various concentrations of the activators copper (Cu) and boron (B) on the thermoluminescence (TL) properties of lithium tetraborate, the phosphor was first synthesized and doped with five different concentrations of copper (0.1-0.005 wt%) using solution combustion method. 0.01 wt% Cu was the concentration which showed the most significant increase in the sensitivity of the phosphor. The second sort of Li2B4O7:Cu material was prepared by adding B (0.001-0.03 wt%) to it. The newly developed copper-boron activated lithium tetraborate (Li2B4O7:Cu, B) material with 0.01 wt% Cu and 0.001 wt% B impurity concentrations was shown to have promise as a TL phosphor. The material formation was examined using powder x-Ray Diffraction (XRD) analysis and Scanning Electron Microscope (SEM) imaging. Fourier Transform Infrared (FT-IR) spectrum of the synthesized polycrystalline powder sample was also recorded. The TL glow curves were analyzed to determine various dosimetric characteristics of the synthesized luminophosphors. The dose response increased in a ;linear; way with the beta-ray exposure between 0.1-20 Gy, a dose range being interested in medical dosimetry. The response with changing photon and electron energy was studied. The rate of decay of the TL signal was investigated both for dark storage and under direct sunlight. Li2B4O7:Cu, B showed no individual variation of response in 9 recycling measurements. The fluorescence spectrum was determined. The kinetic parameters were estimated by different methods and the results discussed. The studied properties of synthesized Li2B4O7:Cu, B were found all favorable for dosimetric purposes.

High-efficiency indium tin oxide/indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Li, X.; Wanlass, M. W.; Gessert, T. A.; Emery, K. A.; Coutts, T. J.

1989-01-01

Improvements in the performance of indium tin oxide (ITO)/indium phosphide solar cells have been realized by the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates. The highest efficiency cells were achieved when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, global efficiencies of 18.9 percent were achieved. It is suggested that the excellent performance of these solar cells results from the optimization of the doping, thickness, transport, and surface properties of the p-type base, as well as from better control over the ITO deposition procedure.

Growth of indium gallium arsenide thin film on silicon substrate by MOCVD technique

NASA Astrophysics Data System (ADS)

Chowdhury, Sisir; Das, Anish; Banerji, Pallab

2018-05-01

Indium gallium arsenide (InGaAs) thin film with indium phosphide (InP) buffer has been grown on p-type silicon (100) by Metal Organic Chemical Vapor Deposition (MOCVD) technique. To get a lattice matched substrate an Indium Phosphide buffer thin film is deposited onto Si substrate prior to InGaAs growth. The grown films have been investigated by UV-Vis-NIR reflectance spectroscopy. The band gap energy of the grown InGaAs thin films determined to be 0.82 eV from reflectance spectrum and the films are found to have same thickness for growth between 600 °C and 650 °C. Crystalline quality of the grown films has been studied by grazing incidence X-ray diffractometry (GIXRD).

Optical properties of anodically degraded ZnO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Messerschmidt, Daniel, E-mail: daniel.messerschmidt@bosch.com; Gnehr, Wolf-Michael; Eberhardt, Jens

2014-03-07

We discuss the optical properties of non-degraded and anodically degraded boron-doped zinc oxide (ZnO:B) deposited by low-pressure chemical vapour deposition on soda-lime glass. The optical model used to simulate the infrared reflectance in the wavelength range between 1.2 and 25 μm is based on the Maxwell-Garnett effective-medium theory. The model is sensitive to the conditions at the grain boundaries of the investigated polycrystalline ZnO:B films. We confirm that the presence of defect-rich grain boundaries, especially after degradation, causes a highly resistive ZnO:B film. Furthermore, indications of a degraded zinc oxide layer next to the ZnO:B/glass interface with different refractive index aremore » found. We present evidence for the creation of oxygen vacancies, based on Raman investigations, which correlate with a shift of the optical absorption edge of the ZnO:B. Investigations with scanning and transmission electron microscopy show microvoids at the grain boundaries after anodic degradation. This indicates that the grain/grain interfaces are the principle location of defects after degradation.« less

Diamond- cBN alloy: A universal cutting material

DOE PAGES

Wang, Pei; He, Duanwei; Wang, Liping; ...

2015-09-08

Diamond and cubic boron nitride ( cBN) as conventional superhard materials have found widespread industrial applications, but both have inherent limitations. Diamond is not suitable for high-speed cutting of ferrous materials due to its poor chemical inertness, while cBN is only about half as hard as diamond. Because of their affinity in structural lattices and covalent bonding character, diamond and cBN could form alloys that can potentially fill the performance gap. However, the idea has never been demonstrated because samples obtained in the previous studies were too small to be tested for their practical performance. Here, we report the synthesismore » and characterization of transparent bulk diamond- cBN alloy compacts whose diameters (3 mm) are sufficiently large for them to be processed into cutting tools. The testing results show that the diamond- cBN alloy has superior chemical inertness over polycrystalline diamond and higher hardness than single crystal cBN. In conclusion, high-speed cutting tests on hardened steel and granite suggest that diamond- cBN alloy is indeed a universal cutting material.« less

Diamond-cBN alloy: A universal cutting material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Pei; High Pressure Science and Engineering Center and Department of Physics and Astronomy, University of Nevada Las Vegas, Las Vegas, Nevada 89154; He, Duanwei, E-mail: duanweihe@scu.edu.cn

Diamond and cubic boron nitride (cBN) as conventional superhard materials have found widespread industrial applications, but both have inherent limitations. Diamond is not suitable for high-speed cutting of ferrous materials due to its poor chemical inertness, while cBN is only about half as hard as diamond. Because of their affinity in structural lattices and covalent bonding character, diamond and cBN could form alloys that can potentially fill the performance gap. However, the idea has never been demonstrated because samples obtained in the previous studies were too small to be tested for their practical performance. Here, we report the synthesis andmore » characterization of transparent bulk diamond-cBN alloy compacts whose diameters (3 mm) are sufficiently large for them to be processed into cutting tools. The testing results show that the diamond-cBN alloy has superior chemical inertness over polycrystalline diamond and higher hardness than single crystal cBN. High-speed cutting tests on hardened steel and granite suggest that diamond-cBN alloy is indeed a universal cutting material.« less

Diamond- cBN alloy: A universal cutting material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Pei; He, Duanwei; Wang, Liping

Diamond and cubic boron nitride ( cBN) as conventional superhard materials have found widespread industrial applications, but both have inherent limitations. Diamond is not suitable for high-speed cutting of ferrous materials due to its poor chemical inertness, while cBN is only about half as hard as diamond. Because of their affinity in structural lattices and covalent bonding character, diamond and cBN could form alloys that can potentially fill the performance gap. However, the idea has never been demonstrated because samples obtained in the previous studies were too small to be tested for their practical performance. Here, we report the synthesismore » and characterization of transparent bulk diamond- cBN alloy compacts whose diameters (3 mm) are sufficiently large for them to be processed into cutting tools. The testing results show that the diamond- cBN alloy has superior chemical inertness over polycrystalline diamond and higher hardness than single crystal cBN. In conclusion, high-speed cutting tests on hardened steel and granite suggest that diamond- cBN alloy is indeed a universal cutting material.« less

The Mechanical Properties of Energetically Deposited Non-Crystalline Carbon Thin Films

DOE PAGES

Kracica, M.; Kocer, C.; Lau, D.; ...

2015-11-05

The mechanical behaviour of carbon films prepared with a variety of densities and microstructures was investigated using nanoindentation. Deposition energies between 25 and 600 eV and temperatures in the range 25-600 °C were used. Films prepared at low temperatures and moderate energy were amorphous with a high density. Finite element methods were used to model the stress fields, reproduce the indentation behaviour and evaluate elastic properties. Young s moduli up to 670 GPa and a low Poisson s ratio of ~ 0.17 were found, comparable to polycrystalline cubic boron nitride, one of the hardest materials known. Films with the samemore » density did not always show the same behaviour, emphasising the role of microstructure in determining mechanical response. Extended graphite- like regions within the films grown at high energy and high temperature observed in transmission electron microscopy caused plastic deformation and failure to recover after a complete indentation cycle. At low deposition energies, the graphite-like regions were smaller in size causing plastic deformation but with complete recovery after indentation.« less

Surface roughness analysis after laser assisted machining of hard to cut materials

NASA Astrophysics Data System (ADS)

Przestacki, D.; Jankowiak, M.

2014-03-01

Metal matrix composites and Si3N4 ceramics are very attractive materials for various industry applications due to extremely high hardness and abrasive wear resistance. However because of these features they are problematic for the conventional turning process. The machining on a classic lathe still requires special polycrystalline diamond (PCD) or cubic boron nitride (CBN) cutting inserts which are very expensive. In the paper an experimental surface roughness analysis of laser assisted machining (LAM) for two tapes of hard-to-cut materials was presented. In LAM, the surface of work piece is heated directly by a laser beam in order to facilitate, the decohesion of material. Surface analysis concentrates on the influence of laser assisted machining on the surface quality of the silicon nitride ceramic Si3N4 and metal matrix composite (MMC). The effect of the laser assisted machining was compared to the conventional machining. The machining parameters influence on surface roughness parameters was also investigated. The 3D surface topographies were measured using optical surface profiler. The analysis of power spectrum density (PSD) roughness profile were analyzed.

Properties of GaP Schottky barrier diodes at elevated temperatures.

NASA Technical Reports Server (NTRS)

Nannichi, Y.; Pearson, G. L.

1969-01-01

Gallium phosphide Schottky barrier diodes, discussing construction and metals used, barrier height relationships to impurity concentration and temperature, rectifying characteristics and internal quantum efficiency

Trends in activity for the oxygen evolution reaction on transition metal (M = Fe, Co, Ni) phosphide pre-catalysts† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c7sc05033j

PubMed Central

Xu, Junyuan; Li, Junjie; Xiong, Dehua; Zhang, Bingsen; Liu, Yuefeng; Wu, Kuang-Hsu; Amorim, Isilda; Li, Wei

2018-01-01

Transition metal phosphides (TMPs) have recently emerged as a new class of pre-catalysts that can efficiently catalyze the oxygen evolution reaction (OER). However, how the OER activity of TMPs varies with the catalyst composition has not been systematically explored. Here, we report the alkaline OER electrolysis of a series of nanoparticulate phosphides containing different equimolar metal (M = Fe, Co, Ni) components. Notable trends in OER activity are observed, following the order of FeP < NiP < CoP < FeNiP < FeCoP < CoNiP < FeCoNiP, which indicate that the introduction of a secondary metal(s) to a mono-metallic TMP substantially boosts the OER performance. We ascribe the promotional effect to the enhanced oxidizing power of bi- and tri-metallic TMPs that can facilitate the formation of MOH and chemical adsorption of OH– groups, which are the rate-limiting steps for these catalysts according to our Tafel analysis. Remarkably, the tri-metallic FeCoNiP pre-catalyst exhibits exceptionally high apparent and intrinsic OER activities, requiring only 200 mV to deliver 10 mA cm–2 and showing a high turnover frequency (TOF) of ≥0.94 s–1 at the overpotential of 350 mV. PMID:29780476

Colloidal Cobalt Phosphide Nanocrystals as Trifunctional Electrocatalysts for Overall Water Splitting Powered by a Zinc–Air Battery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Hui; Li, Qi; Wen, Peng

Highly efficient and stable electrocatalysts, particularly those that are capable of multifunctionality in the same electrolyte, are in high demand for the hydrogen evolution reaction (HER), oxygen evolution reaction (OER), and oxygen reduction reaction (ORR). In this paper, highly monodisperse CoP and Co 2P nanocrystals (NCs) are synthesized using a robust solution-phase method. The highly exposed (211) crystal plane and abundant surface phosphide atoms make the CoP NCs efficient catalysts toward ORR and HER, while metal-rich Co 2P NCs show higher OER performance owing to easier formation of plentiful Co 2P@COOH heterojunctions. Density functional theory calculation results indicate that themore » desorption of OH* from cobalt sites is the rate-limiting step for both CoP and Co 2P in ORR and that the high content of phosphide can lower the reaction barrier. A water electrolyzer constructed with a CoP NC cathode and a Co 2P NC anode can achieve a current density of 10 mA cm -2 at 1.56 V, comparable even to the noble metal-based Pt/C and RuO 2/C pair. Finally and furthermore, the CoP NCs are employed as an air cathode in a primary zinc–air battery, exhibiting a high power density of 62 mW cm -2 and good stability.« less

Colloidal Cobalt Phosphide Nanocrystals as Trifunctional Electrocatalysts for Overall Water Splitting Powered by a Zinc–Air Battery

DOE PAGES

Li, Hui; Li, Qi; Wen, Peng; ...

2018-01-15

Highly efficient and stable electrocatalysts, particularly those that are capable of multifunctionality in the same electrolyte, are in high demand for the hydrogen evolution reaction (HER), oxygen evolution reaction (OER), and oxygen reduction reaction (ORR). In this paper, highly monodisperse CoP and Co 2P nanocrystals (NCs) are synthesized using a robust solution-phase method. The highly exposed (211) crystal plane and abundant surface phosphide atoms make the CoP NCs efficient catalysts toward ORR and HER, while metal-rich Co 2P NCs show higher OER performance owing to easier formation of plentiful Co 2P@COOH heterojunctions. Density functional theory calculation results indicate that themore » desorption of OH* from cobalt sites is the rate-limiting step for both CoP and Co 2P in ORR and that the high content of phosphide can lower the reaction barrier. A water electrolyzer constructed with a CoP NC cathode and a Co 2P NC anode can achieve a current density of 10 mA cm -2 at 1.56 V, comparable even to the noble metal-based Pt/C and RuO 2/C pair. Finally and furthermore, the CoP NCs are employed as an air cathode in a primary zinc–air battery, exhibiting a high power density of 62 mW cm -2 and good stability.« less

Potential for use of indium phosphide solar cells in the space radiation environment

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1985-01-01

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

Chemical nature of silicon nitride-indium phosphide interface and rapid thermal annealing for InP MISFETs

NASA Technical Reports Server (NTRS)

Biedenbender, M. D.; Kapoor, V. J.

1990-01-01

A rapid thermal annealing (RTA) process in pure N2 or pure H2 was developed for ion-implanted and encapsulated indium phosphide compound semiconductors, and the chemical nature at the silicon nitride-InP interface before and after RTA was examined using XPS. Results obtained from SIMS on the atomic concentration profiles of the implanted silicon in InP before and after RTA are presented, together with electrical characteristics of the annealed implants. Using the RTA process developed, InP metal-insulator semiconductor FETs (MISFETS) were fabricated. The MISFETS prepared had threshold voltages of +1 V, transconductance of 27 mS/mm, peak channel mobility of 1200 sq cm/V per sec, and drain current drift of only 7 percent.

Synthesis and x-ray characterization of cobalt phosphide (Co₂P) nanorods for the oxygen reduction reaction

DOE PAGES

Doan-Nguyen, Vicky V.T.; Su, Dong; Zhang, Sen; ...

2015-07-14

Low temperature fuel cells are clean, effective alternative fuel conversion technology. Oxygen reduction reaction (ORR) at the fuel cell cathode has required Pt as the electrocatalyst for high activity and selectivity of the four-electron reaction pathway. Targeting a less expensive, earth abundant alternative, we have developed the synthesis of cobalt phosphide (Co₂P) nanorods for ORR. Characterization techniques that include total X-ray scattering and extended X-ray absorption fine structure revealed a deviation of the nanorods from bulk crystal structure with a contraction along the b orthorhombic lattice parameter. The carbon supported nanorods have comparable activity but are remarkably more stable thanmore » conventional Pt catalysts for the oxygen reduction reaction in alkaline environments.« less

GaAsP on GaP top solar cells

NASA Technical Reports Server (NTRS)

Mcneely, J. B.; Negley, G. H.; Barnett, A. M.

1985-01-01

GaAsP on GaP top solar cells as an attachment to silicon bottom solar cells are being developed. The GaAsP on GaP system offers several advantages for this top solar cell. The most important is that the gallium phosphide substrate provides a rugged, transparent mechanical substrate which does not have to be removed or thinned during processing. Additional advantages are that: (1) gallium phosphide is more oxidation resistant than the III-V aluminum compounds, (2) a range of energy band gaps higher than 1.75 eV is readily available for system efficiency optimization, (3) reliable ohmic contact technology is available from the light-emitting diode industry, and (4) the system readily lends itself to graded band gap structures for additional increases in efficiency.

Boron containing multilayer coatings and method of fabrication

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1997-09-23

Hard coatings are fabricated from multilayer boron/boron carbide, boron carbide/cubic boron nitride, and boron/boron nitride/boron carbide, and the fabrication thereof involves magnetron sputtering in a selected atmosphere. These hard coatings may be applied to tools and engine and other parts, as well to reduce wear on tribological surfaces and electronic devices. These boron coatings contain no morphological growth features. For example, the boron and boron carbide used in forming the multilayers are formed in an inert (e.g. argon) atmosphere, while the cubic boron nitride is formed in a reactive (e.g. nitrogen) atmosphere. The multilayer boron/boron carbide, and boron carbide/cubic boron nitride is produced by depositing alternate layers of boron, cubic boron nitride or boron carbide, with the alternate layers having a thickness of 1 nanometer to 1 micrometer, and at least the interfaces of the layers may be of a discrete or a blended or graded composition. 6 figs.

Boron containing multilayer coatings and method of fabrication

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1997-01-01

Hard coatings are fabricated from multilayer boron/boron carbide, boron carbide/cubic boron nitride, and boron/boron nitride/boron carbide, and the fabrication thereof involves magnetron sputtering in a selected atmosphere. These hard coatings may be applied to tools and engine and other parts, as well to reduce wear on tribological surfaces and electronic devices. These boron coatings contain no morphological growth features. For example, the boron and boron carbide used in forming the multilayers are formed in an inert (e.g. argon) atmosphere, while the cubic boron nitride is formed in a reactive (e.g. nitrogen) atmosphere. The multilayer boron/boron carbide, and boron carbide/cubic boron nitride is produced by depositing alternate layers of boron, cubic boron nitride or boron carbide, with the alternate layers having a thickness of 1 nanometer to 1 micrometer, and at least the interfaces of the layers may be of a discrete or a blended or graded composition.

Methods of forming boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J

A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boronmore » nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.« less

Effects of P/Ni ratio and Ni content on performance of γ-Al2O3-supported nickel phosphides for deoxygenation of methyl laurate to hydrocarbons

NASA Astrophysics Data System (ADS)

Zhang, Zhena; Tang, Mingxiao; Chen, Jixiang

2016-01-01

γ-Al2O3-supported nickel phosphides (mNi-Pn) were prepared by the TPR method and tested for the deoxygenation of methyl laurate to hydrocarbons. The effects of the P/Ni ratio (n = 1.0-2.5) and Ni content (m = 5-15 wt.%) in the precursors on their structure and performance were investigated. Ni/γ-Al2O3 was also studied for comparison. It was found that the formation of AlPO4 in the precursor inhibited the reduction of phosphate and so the formation of nickel phosphides. With increasing the P/Ni ratio and Ni content, the Ni, Ni3P, Ni12P5 and Ni2P phases orderly formed, accompanying with the increases of their particle size and the amount of weak acid sites (mainly due to P-OH group), while the CO uptake and the amount of medium strong acid sites (mainly related to Ni sites) reached maximum on 10%Ni-P1.5. In the deoxygenation reaction, compared with Ni/γ-Al2O3, the mNi-Pn catalysts showed much lower activities for decarbonylation, Csbnd C hydrogenolysis and methanation due to the ligand and ensemble effects of P. The conversion and the selectivity to n-C11 and n-C12 hydrocarbons achieved maximum on 10%Ni-P 2.0 for the 10%Ni-Pn catalysts and on 8%Ni-P2.0 for the mNi-P2.0 catalysts, while the turnover frequency (TOF) of methyl laurate mainly increased with the P/Ni ratio and Ni content. We propose that TOF was influenced by the nickel phosphide phases, the catalyst acidity and the particle size as well as the synergetic effect between the Ni site and acid site. Again, the hydrodeoxygenation pathway of methyl laurate was promoted with increasing P/Ni ratio and Ni content, ascribed to the phase change in the order of Ni, Ni3P, Ni12P5 and Ni2P in the prepared catalysts.

Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2/silicon

NASA Astrophysics Data System (ADS)

Chong, Y. F.; Pey, K. L.; Wee, A. T. S.; Thompson, M. O.; Tung, C. H.; See, A.

2002-11-01

In this letter, we report on the complex solidification structures formed during laser irradiation of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack. Due to enhanced optical coupling, the titanium nitride/titanium capping layer increases the melt depth of polycrystalline silicon by more than a factor of 2. It is found that the titanium atoms diffuse through the entire polycrystalline silicon layer during irradiation. Contrary to the expected polycrystalline silicon growth, distinct regions of polycrystalline and amorphous silicon are formed instead. Possible mechanisms for the formation of these microstructures are proposed.

Process for utilizing low-cost graphite substrates for polycrystalline solar cells

NASA Technical Reports Server (NTRS)

Chu, T. L. (Inventor)

1978-01-01

Low cost polycrystalline silicon solar cells supported on substrates were prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices were formed which effectively convert solar energy to electrical energy. To improve the conversion efficiency of the polycrystalline silicon solar cells, the crystallite size in the silicon was substantially increased by melting and solidifying a base layer of polycrystalline silicon before depositing the layers which form the p-n junction.

Crystalline boron nitride aerogels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.

This disclosure provides methods and materials related to boron nitride aerogels. For example, one aspect relates to a method for making an aerogel comprising boron nitride, comprising: (a) providing boron oxide and an aerogel comprising carbon; (b) heating the boron oxide to melt the boron oxide and heating the aerogel; (c) mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide; and (d) converting at least a portion of the carbon to boron nitride to obtain the aerogel comprising boron nitride. Another aspect relates to a method for making an aerogel comprising boron nitride, comprising heating boron oxidemore » and an aerogel comprising carbon under flow of a nitrogen-containing gas, wherein boron oxide vapor and the nitrogen-containing gas convert at least a portion of the carbon to boron nitride to obtain the aerogel comprising boron nitride.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mendoza-Garcia, Adriana; Zhu, Huiyuan; Yu, Yongsheng

Presented here is a facile approach to bimetallic phosphides, Co-Fe-P, via high-temperature (300°C) reaction between Co-Fe-O nanoparticles and trioctylphosphine. The growth of Co-Fe-P from the Co-Fe-O is anisotropic. As a result, Co-Fe-P nanorods (from the polyhedral Co-Fe-O nanoparticles) and sea-urchin-like Co-Fe-P (from the cubic Co-Fe-O nanoparticles) are synthesized with both nanorod and the sea-urchin-arm dimensions controlled by Co/Fe ratios. The Co-Fe-P structure, especially the sea-urchin-like (Co 0.54Fe 0.46) 2P, shows enhanced catalysis for oxygen evolution reaction in KOH with its catalytic efficiency surpassing Ir catalyst. Our synthesis is simple and may be readily extended to the preparation of other multimetallicmore » phosphides for important catalysis and energy storage applications.« less

Indium phosphide solar cells - Status and prospects for use in space

NASA Technical Reports Server (NTRS)

Weinberg, I.; Brinker, D. J.

1986-01-01

The current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is superior to that of either GaAs or Si under 1 MeV electron and 10 MeV proton irradiation. Using lightweight blanket technology, a SEP array structure and projected cell efficiencies, array specific powers are obtained for all three cell types. Array performance is calculated as a function of time in orbit. The results indicate that arrays using InP cells can outperform those using GaAs or Si in orbits where radiation is a significant cell degradation factor. It is concluded that InP solar cells are excellent prospects for future use in the space radiation environment.

Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6 plasma

NASA Astrophysics Data System (ADS)

Hönl, Simon; Hahn, Herwig; Baumgartner, Yannick; Czornomaz, Lukas; Seidler, Paul

2018-05-01

We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide (AlxGa1–xP). Utilizing mixtures of silicon tetrachloride (SiCl4) and sulfur hexafluoride (SF6), selectivities exceeding 2700:1 are achieved at GaP etch rates above 3000 nm min‑1. A design of experiments has been employed to investigate the influence of the inductively coupled-plasma power, the chamber pressure, the DC bias and the ratio of SiCl4 to SF6. The process enables the use of thin AlxGa1–xP stop layers even at aluminum contents of a few percent.

Nucleation of intragranular ferrite in Fe-Ni-P alloys

NASA Astrophysics Data System (ADS)

Narayan, C.; Goldstein, J. I.

1984-05-01

The nucleation of intragranular ferrite from austenite in Fe-Ni-P alloys was investigated in order to understand the development of the Widmanstätten pattern in iron meteorites. Alloys containing 5 to 10 wt pct Ni and 0 to 1 wt pct P were used to simulate iron meteorite compositions. In the isothermal and controlled cooling experiments the reaction path γ → α + γ serves only to nucleate ferrite along austenite grain boundaries. It is necessary for (FeNi)3P to be present within y grains in order to nucleate intragranular ferrite. The reaction path γ → γ + phosphide → α + γ + phosphide yields rod shaped ferrite nuclei that bear a near Kurdjumov-Sachs orientation relationship with the surrounding matrix. The precipitation of ferrite, both along grain boundaries and within the austenite grains, is suppressed in the absence of P.

Direct Band Gap Wurtzite Gallium Phosphide Nanowires

PubMed Central

2013-01-01

The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594 nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength is tuned across an important range of the visible light spectrum (555–690 nm). This approach of crystal structure engineering enables new pathways to tailor materials properties enhancing the functionality. PMID:23464761

Indium phosphide solar cells: status and prospects for use in space

NASA Technical Reports Server (NTRS)

Weinberg, I.; Brinker, D. J.

1986-01-01

The current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is superior to that of either GaAs or Si under 1 MeV electron and 10 MeV proton irradiation. Using lightweight blanket technology, a SEP array structure and projected cell efficiencies, array specific powers are obtained for all three cell types. Array performance is calculated as a function of time in orbit. The results indicate that arrays using InP cells can outperform those using GaAs or Si in orbits where radiation is a significant cell degradation factor. It is concluded that InP solar cells are excellent prospects for future use in the space radiation environment.

New intermetallic MIrP (M=Ti, Zr, Nb, Mo) and MgRuP compounds related with MoM'P (M'=Ni and Ru) superconductor

NASA Astrophysics Data System (ADS)

Kito, Hijiri; Iyo, Akira; Wada, Toshimi

2011-01-01

Using a cubic-anvil high-pressure apparatus, ternary iridium phosphides MIrP (M=Ti, Zr, Nb, Mo) and MgRuP have been prepared by reaction of stoichiometric amounts of each metal and phosphide powders at around 2 Gpa and above 1523 K for the first time. The structure of these compounds prepared at high-pressure has been characterized by X-ray powder diffraction. Diffraction lines of these compounds are assigned by the index of the Co2Si-type structure. The electrical resistivity and the d.c magnetic susceptibility of MIrP (M=Ti, Zr, Nb, Mo) have measured at low temperatures. Unfortunately, no superconducting transition for MIrP (M=Ti, Zr, Nb, Mo) and MgRuP are observed down to 2 K.

Comparative studies on mitochondrial electron transport chain complexes of Sitophilus zeamais treated with allyl isothiocyanate and calcium phosphide.

PubMed

Zhang, Chao; Wu, Hua; Zhao, Yuan; Ma, Zhiqing; Zhang, Xing

2016-01-01

With Sitophilus zeamais as the target organism, the present study for the first time attempted to elucidate the comparative effects between allyl isothiocyanate (AITC) and calcium phosphide (Ca3P2), exposure on mitochondrial electron transport chain (ETC.) complex I & IV and their downstream effects on enzymes relevant to reactive oxygen species (ROS). In vivo, both AITC and Ca3P2 inhibited complex I and IV with similar downstream effects. In contrast with Ca3P2, the inhibition of complex I caused by AITC was dependent on time and dose. In vitro, AITC inhibited complex IV more significantly than complex I. These results indicate that mitochondrial complex IV is the primary target of AITC, and that complex I is another potential target. Copyright © 2015 Elsevier B.V. All rights reserved.

ANALYSIS OF THE WATER-SPLITTING CAPABILITIES OF GALLIUM INDIUM PHOSPHIDE NITRIDE (GaInPN)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Head, J.; Turner, J.

2007-01-01

With increasing demand for oil, the fossil fuels used to power society’s vehicles and homes are becoming harder to obtain, creating pollution problems and posing hazard’s to people’s health. Hydrogen, a clean and effi cient energy carrier, is one alternative to fossil fuels. Certain semiconductors are able to harness the energy of solar photons and direct it into water electrolysis in a process known as photoelectrochemical water-splitting. P-type gallium indium phosphide (p-GaInP2) in tandem with GaAs is a semiconductor system that exhibits water-splitting capabilities with a solar-tohydrogen effi ciency of 12.4%. Although this material is effi cient at producing hydrogenmore » through photoelectrolysis it has been shown to be unstable in solution. By introducing nitrogen into this material, there is great potential for enhanced stability. In this study, gallium indium phosphide nitride Ga1-yInyP1-xNx samples were grown using metal-organic chemical vapor deposition in an atmospheric-pressure vertical reactor. Photocurrent spectroscopy determined these materials to have a direct band gap around 2.0eV. Mott-Schottky analysis indicated p-type behavior with variation in fl atband potentials with varied frequencies and pH’s of solutions. Photocurrent onset and illuminated open circuit potential measurements correlated to fl atband potentials determined from previous studies. Durability analysis suggested improved stability over the GaInP2 system.« less

Structure and reactivity of boron-ate complexes derived from primary and secondary boronic esters.

PubMed

Feeney, Kathryn; Berionni, Guillaume; Mayr, Herbert; Aggarwal, Varinder K

2015-06-05

Boron-ate complexes derived from primary and secondary boronic esters and aryllithiums have been isolated, and the kinetics of their reactions with carbenium ions studied. The second-order rate constants have been used to derive nucleophilicity parameters for the boron-ate complexes, revealing that nucleophilicity increased with (i) electron-donating aromatics on boron, (ii) neopentyl glycol over pinacol boronic esters, and (iii) 12-crown-4 ether.

Structural control of In2Se3 polycrystalline thin films by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Okamoto, T.; Nakada, Y.; Aoki, T.; Takaba, Y.; Yamada, A.; Konagai, M.

2006-09-01

Structural control of In2Se3 polycrystalline thin films was attempted by molecular beam epitaxy (MBE) technique. In2Se3 polycrystalline films were obtained on glass substrates at substrate temperatures above 400 °C. VI/III ratio greatly affected crystal structure of In2Se3 polycrystalline films. Mixtures of -In2Se3 and γ-In2Se3 were obtained at VI/III ratios greater than 20, and layered InSe polycrystalline films were formed at VI/III ratios below 1. γ-In2Se3 polycrystalline thin films without α-phase were successfully deposited with VI/III ratios in a range of 2 to 4. Photocurrent spectra of the γ-In2Se3 polycrystalline films showed an abrupt increase at approximately 1.9 eV, which almost corresponds with the reported bandgap of γ-In2Se3. Dark conductivity and photoconductivity measured under solar simulator light (AM 1.5, 100 mW/cm2) were approximately 10-9 and 10-5 S/cm in the γ-In2Se3 polycrystalline thin films, respectively.

Electroextraction of boron from boron carbide scrap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Ashish; Anthonysamy, S., E-mail: sas@igcar.gov.in; Ghosh, C.

2013-10-15

Studies were carried out to extract elemental boron from boron carbide scrap. The physicochemical nature of boron obtained through this process was examined by characterizing its chemical purity, specific surface area, size distribution of particles and X-ray crystallite size. The microstructural characteristics of the extracted boron powder were analyzed by using scanning electron microscopy and transmission electron microscopy. Raman spectroscopic examination of boron powder was also carried out to determine its crystalline form. Oxygen and carbon were found to be the major impurities in boron. Boron powder of purity ∼ 92 wt. % could be produced by the electroextraction processmore » developed in this study. Optimized method could be used for the recovery of enriched boron ({sup 10}B > 20 at. %) from boron carbide scrap generated during the production of boron carbide. - Highlights: • Recovery of {sup 10}B from nuclear grade boron carbide scrap • Development of process flow sheet • Physicochemical characterization of electroextracted boron • Microscopic examination of electroextracted boron.« less

JAGUAR Procedures for Detonation Behavior of Explosives Containing Boron

NASA Astrophysics Data System (ADS)

Stiel, Leonard; Baker, Ernest; Capellos, Christos

2009-06-01

The JAGUAR product library was expanded to include boron and boron containing products. Relationships of the Murnaghan form for molar volumes and derived properties were implemented in JAGUAR. Available Hugoniot and static volumertic data were analyzed to obtain constants of the Murnaghan relationship for solid boron, boron oxide, boron nitride, boron carbide, and boric acid. Experimental melting points were also utilized with optimization procedures to obtain the constants of the volumetric relationships for liquid boron and boron oxide. Detonation velocities for HMX - boron mixtures calculated with these relationships using JAGUAR are in closer agreement with literature values at high initial densities for inert (unreacted) boron than with the completely reacted metal. These results indicate that boron mixtures may exhibit eigenvalue detonation behavior, as observed by aluminized combined effects explosives, with higher detonation velocities than would be achieved by a classical Chapman-Jouguet detonation. Analyses of calorimetric measurements for RDX - boron mixtures indicate that at high boron contents the formation of side products, including boron nitride and boron carbide, inhibits the energy output obtained from the detonation of the formulation.

Window structure for passivating solar cells based on gallium arsenide

NASA Technical Reports Server (NTRS)

Barnett, Allen M. (Inventor)

1985-01-01

Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.

Process for microwave sintering boron carbide

DOEpatents

Holcombe, C.E.; Morrow, M.S.

1993-10-12

A method of microwave sintering boron carbide comprises leaching boron carbide powder with an aqueous solution of nitric acid to form a leached boron carbide powder. The leached boron carbide powder is coated with a glassy carbon precursor to form a coated boron carbide powder. The coated boron carbide powder is consolidated in an enclosure of boron nitride particles coated with a layer of glassy carbon within a container for microwave heating to form an enclosed coated boron carbide powder. The enclosed coated boron carbide powder is sintered within the container for microwave heating with microwave energy.

Process for microwave sintering boron carbide

DOEpatents

Holcombe, Cressie E.; Morrow, Marvin S.

1993-01-01

A method of microwave sintering boron carbide comprises leaching boron carbide powder with an aqueous solution of nitric acid to form a leached boron carbide powder. The leached boron carbide powder is coated with a glassy carbon precursor to form a coated boron carbide powder. The coated boron carbide powder is consolidated in an enclosure of boron nitride particles coated with a layer of glassy carbon within a container for microwave heating to form an enclosed coated boron carbide powder. The enclosed coated boron carbide powder is sintered within the container for microwave heating with microwave energy.

Use of Phenylboronic Acids to Investigate Boron Function in Plants. Possible Role of Boron in Transvacuolar Cytoplasmic Strands and Cell-to-Wall Adhesion

PubMed Central

Bassil, Elias; Hu, Hening; Brown, Patrick H.

2004-01-01

The only defined physiological role of boron in plants is as a cross-linking molecule involving reversible covalent bonds with cis-diols on either side of borate. Boronic acids, which form the same reversible bonds with cis-diols but cannot cross-link two molecules, were used to selectively disrupt boron function in plants. In cultured tobacco (Nicotiana tabacum cv BY-2) cells, addition of boronic acids caused the disruption of cytoplasmic strands and cell-to-cell wall detachment. The effect of the boronic acids could be relieved by the addition of boron-complexing sugars and was proportional to the boronic acid-binding strength of the sugar. Experiments with germinating petunia (Petunia hybrida) pollen and boronate-affinity chromatography showed that boronic acids and boron compete for the same binding sites. The boronic acids appear to specifically disrupt or prevent borate-dependent cross-links important for the structural integrity of the cell, including the organization of transvacuolar cytoplasmic strands. Boron likely plays a structural role in the plant cytoskeleton. We conclude that boronic acids can be used to rapidly and reversibly induce boron deficiency-like responses and therefore are useful tools for investigating boron function in plants. PMID:15466241

Method of fabricating boron containing coatings

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1999-01-01

Hard coatings are fabricated from boron nitride, cubic boron nitride, and multilayer boron/cubic boron nitride, and the fabrication thereof involves magnetron sputtering in a selected atmosphere. These hard coatings may be applied to tools and engine and other parts, as well to reduce wear on tribological surfaces and electronic devices. These boron coatings contain no morphological growth features. For example, the boron is formed in an inert (e.g. argon) atmosphere, while the cubic boron nitride is formed in a reactive (e.g. nitrogen) atmosphere. The multilayer boron/cubic boron nitride, is produced by depositing alternate layers of boron and cubic boron nitride, with the alternate layers having a thickness of 1 nanometer to 1 micrometer, and at least the interfaces of the layers may be discrete or of a blended or graded composition.

Method of fabricating boron containing coatings

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1999-04-27

Hard coatings are fabricated from boron nitride, cubic boron nitride, and multilayer boron/cubic boron nitride, and the fabrication thereof involves magnetron sputtering in a selected atmosphere. These hard coatings may be applied to tools and engine and other parts, as well to reduce wear on tribological surfaces and electronic devices. These boron coatings contain no morphological growth features. For example, the boron is formed in an inert (e.g. argon) atmosphere, while the cubic boron nitride is formed in a reactive (e.g. nitrogen) atmosphere. The multilayer boron/cubic boron nitride, is produced by depositing alternate layers of boron and cubic boron nitride, with the alternate layers having a thickness of 1 nanometer to 1 micrometer, and at least the interfaces of the layers may be discrete or of a blended or graded composition. 3 figs.

Enhanced magnetic and thermoelectric properties in epitaxial polycrystalline SrRuO3 thin films.

PubMed

Woo, Sungmin; Lee, Sang A; Mun, Hyeona; Choi, Young Gwan; Zhung, Chan June; Shin, Soohyeon; Lacotte, Morgane; David, Adrian; Prellier, Wilfrid; Park, Tuson; Kang, Won Nam; Lee, Jong Seok; Kim, Sung Wng; Choi, Woo Seok

2018-03-01

Transition metal oxide thin films show versatile electric, magnetic, and thermal properties which can be tailored by deliberately introducing macroscopic grain boundaries via polycrystalline solids. In this study, we focus on the modification of magnetic and thermal transport properties by fabricating single- and polycrystalline epitaxial SrRuO 3 thin films using pulsed laser epitaxy. Using the epitaxial stabilization technique with an atomically flat polycrystalline SrTiO 3 substrate, an epitaxial polycrystalline SrRuO 3 thin film with the crystalline quality of each grain comparable to that of its single-crystalline counterpart is realized. In particular, alleviated compressive strain near the grain boundaries due to coalescence is evidenced structurally, which induced the enhancement of ferromagnetic ordering of the polycrystalline epitaxial thin film. The structural variations associated with the grain boundaries further reduce the thermal conductivity without deteriorating the electronic transport, and lead to an enhanced thermoelectric efficiency in the epitaxial polycrystalline thin films, compared with their single-crystalline counterpart.

Boron nitride converted carbon fiber

DOEpatents

Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

2016-04-05

This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

Magneto-optical far-infrared absorption spectroscopy of the hole states of indium phosphide

NASA Astrophysics Data System (ADS)

Lewis, R. A.; Wang, Y.-J.

2005-03-01

Far-infrared absorption spectroscopy in magnetic fields of up to 30 T of the zinc acceptor impurity in indium phosphide has revealed for the first time a series of free-hole transitions (Landau-related series) in addition to the familiar bound-hole transitions (Lyman series) as well as hitherto unobserved phonon replicas of both series. Analysis of these data permits the simultaneous direct experimental determination of (i) the hole effective mass, (ii) the species-specific binding energy of the acceptor impurity, (iii) the absolute energy levels of the acceptor excited states of both odd and even parity, (iv) more reliable, and in some cases the only, g factors for acceptor states, through relaxation of the selection rules for phonon replicas, and (v) the LO phonon energy. The method is applicable to other semiconductors and may lead to the reappraisal of their physical parameters.

High-Performance Rh 2 P Electrocatalyst for Efficient Water Splitting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Haohong; Li, Dongguo; Tang, Yan

2017-04-05

Search for active, stable and cost-efficient electrocatalysts for hydrogen production via water splitting could make substantial impact to the energy technologies that do not rely on fossil fuels. Here we report the synthesis of rhodium phosphide electrocatalyst with low metal loading in the form of nanocubes (NCs) dispersed in high surface area carbon (Rh2P/C) by a facile solvo-thermal approach. The Rh2P/C NCs exhibit remarkable performance for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) compared to Rh/C and Pt/C catalysts. The atomic structure of the rhodium phosphide nanocubes was directly observed by annular dark-field scanning transmission electron microscopy (ADF-STEM),more » which revealed phosphorous-rich outermost atomic layer. Combined experimental and computational studies suggest that surface phosphorous plays crucial role in determining the robust catalyst properties.« less

An in-situ phosphorus source for the synthesis of Cu 3P and the subsequent conversion to Cu 3PS 4 nanoparticle clusters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sheets, Erik J.; Stach, Eric A.; Yang, Wei -Chang

2015-09-20

The search for alternative earth abundant semiconducting nanocrystals for sustainable energy applications has brought forth the need for nanoscale syntheses beyond bulk synthesis routes. Of particular interest are metal phosphides and derivative I-V-VI chalcogenides including copper phosphide (Cu 3P) and copper thiophosphate (Cu 3PS 4). Herein, we report a one-pot, solution-based synthesis of Cu 3P nanocrystals utilizing an in-situ phosphorus source: phosphorus pentasulfide (P 2S 5) in trioctylphosphine (TOP). By injecting this phosphorus source into a copper solution in oleylamine (OLA), uniform and size controlled Cu 3P nanocrystals with a phosphorous-rich surface are synthesized. The subsequent reaction of the Cumore » 3P nanocrystals with decomposing thiourea forms nanoscale Cu 3PS 4 particles having p-type conductivity and an effective optical band gap of 2.36 eV.« less

A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koumetz, Serge D., E-mail: Serge.Koumetz@univ-rouen.fr; Martin, Patrick; Murray, Hugues

Experimental results on the diffusion of grown-in beryllium (Be) in indium gallium arsenide (In{sub 0.53}Ga{sub 0.47}As) and indium gallium arsenide phosphide (In{sub 0.73}Ga{sub 0.27}As{sub 0.58}P{sub 0.42}) gas source molecular beam epitaxy alloys lattice-matched to indium phosphide (InP) can be successfully explained in terms of a combined kick-out and dissociative diffusion mechanism, involving neutral Be interstitials (Be{sub i}{sup 0}), singly positively charged gallium (Ga), indium (In) self-interstitials (I{sub III}{sup +}) and singly positively charged Ga, In vacancies (V{sub III}{sup +}). A new numerical method of solution to the system of diffusion equations, based on the finite difference approximations and Bairstow's method,more » is proposed.« less

Solar cells with gallium phosphide/silicon heterojunction

NASA Astrophysics Data System (ADS)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

Molybdenum Disulfide as a Protection Layer and Catalyst for Gallium Indium Phosphide Solar Water Splitting Photocathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Britto, Reuben J.; Benck, Jesse D.; Young, James L.

2016-06-02

Gallium indium phosphide (GaInP2) is a semiconductor with promising optical and electronic properties for solar water splitting, but its surface stability is problematic as it undergoes significant chemical and electrochemical corrosion in aqueous electrolytes. Molybdenum disulfide (MoS2) nanomaterials are promising to both protect GaInP2 and to improve catalysis since MoS2 is resistant to corrosion and also possesses high activity for the hydrogen evolution reaction (HER). In this work, we demonstrate that GaInP2 photocathodes coated with thin MoS2 surface protecting layers exhibit excellent activity and stability for solar hydrogen production, with no loss in performance (photocurrent onset potential, fill factor, andmore » light limited current density) after 60 hours of operation. This represents a five-hundred fold increase in stability compared to bare p-GaInP2 samples tested in identical conditions.« less

Fabrication and properties of gallium phosphide variable colour displays

NASA Technical Reports Server (NTRS)

Effer, D.; Macdonald, R. A.; Macgregor, G. M.; Webb, W. A.; Kennedy, D. I.

1973-01-01

The unique properties of single-junction gallium phosphide devices incorporating both red and green radiative recombination centers were investigated in application to the fabrication of monolithic 5 x 7 displays capable of displaying symbolic and alphanumeric information in a multicolor format. A number of potentially suitable material preparation techniques were evaluated in terms of both material properties and device performance. Optimum results were obtained for double liquid-phase-epitaxial process in which an open-tube dipping technique was used for n-layer growth and a sealed tipping procedure for subsequent p-layer growth. It was demonstrated that to prepare devices exhibiting a satisfactory range of dominant wavelengths which can be perceived as distinct emission colors extending from the red through green region of the visible spectrum involves a compromise between the material properties necessary for efficient red emission and those considered optimum for efficient green emission.

A new and effective approach to boron removal by using novel boron-specific fungi isolated from boron mining wastewater.

PubMed

Taştan, Burcu Ertit; Çakir, Dilara Nur; Dönmez, Gönül

2016-01-01

Boron-resistant fungi were isolated from the wastewater of a boron mine in Turkey. Boron removal efficiencies of Penicillium crustosum and Rhodotorula mucilaginosa were detected in different media compositions. Minimal Salt Medium (MSM) and two different waste media containing molasses (WM-1) or whey + molasses (WM-2) were tested to make this process cost effective when scaled up. Both isolates achieved high boron removal yields at the highest boron concentrations tested in MSM and WM-1. The maximum boron removal yield by P. crustosum was 45.68% at 33.95 mg l(-1) initial boron concentration in MSM, and was 38.97% at 42.76 mg l(-1) boron for R. mucilaginosa, which seemed to offer an economically feasible method of removing boron from the effluents.

Permanent magnet with MgB{sub 2} bulk superconductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamamoto, Akiyasu, E-mail: yamamoto@appchem.t.u-tokyo.ac.jp; JST-PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012; Ishihara, Atsushi

2014-07-21

Superconductors with persistent zero-resistance currents serve as permanent magnets for high-field applications requiring a strong and stable magnetic field, such as magnetic resonance imaging. The recent global helium shortage has quickened research into high-temperature superconductors (HTSs)—materials that can be used without conventional liquid-helium cooling to 4.2 K. Herein, we demonstrate that 40-K-class metallic HTS magnesium diboride (MgB{sub 2}) makes an excellent permanent bulk magnet, maintaining 3 T at 20 K for 1 week with an extremely high stability (<0.1 ppm/h). The magnetic field trapped in this magnet is uniformly distributed, as for single-crystalline neodymium-iron-boron. Magnetic hysteresis loop of the MgB{sub 2} permanent bulkmore » magnet was determined. Because MgB{sub 2} is a simple-binary-line compound that does not contain rare-earth metals, polycrystalline bulk material can be industrially fabricated at low cost and with high yield to serve as strong magnets that are compatible with conventional compact cryocoolers, making MgB{sub 2} bulks promising for the next generation of Tesla-class permanent-magnet applications.« less

New Measurements of Activation Volume in Olvine Under Anhydrous Conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Durham, W.; Mei, S; Kohlstedt, D

2009-01-01

A new cell assembly for the deformation-DIA (D-DIA) shows promise for limiting the water content of samples and providing a more mechanically stable environment for deformation. The 6-mm cubic cell consists of a 6-mm diameter mullite sphere cradled in a web of unfired pyrophyllite. The pyrophyllite flows during initial compression of the D-DIA to form gaskets between the six anvils while the mullite flows to become a nearly cubic-shaped pressure medium. Measurements on olivine indicate more than one order of magnitude drop in water content to <40 ppm H/Si compared with the boron-epoxy medium. Improved mechanical stability is achieved bymore » elimination of the thermocouple from the assembly and determination of temperature from calibration curves of furnace power vs. temperature. Three samples of polycrystalline orthopyroxene-buffer San Carlos olivine have been deformed in high-temperature creep in the new cell, at pressures of 2.7-4.9 GPa and temperatures near 1473 K. Strength is consistent with that measured in the gas-apparatus at lower pressures. Over the pressure range investigated we resolve an activation volume for creep of dry olivine of V* = 9.5 {+-} 7 x 10-6 m3/mol.« less

The improvement of SiO2 nanotubes electrochemical behavior by hydrogen atmosphere thermal treatment

NASA Astrophysics Data System (ADS)

Spataru, Nicolae; Anastasescu, Crina; Radu, Mihai Marian; Balint, Ioan; Negrila, Catalin; Spataru, Tanta; Fujishima, Akira

2018-06-01

Highly defected SiO2 nanotubes (SiO2-NT) were obtained by a simple sol-gel procedure followed by calcination. Boron-doped diamond (BDD) polycrystalline films coated with SiO2-NT were used as working electrodes and, unexpectedly, cyclic voltammetric experiments have shown that the concentration of both positive and negative defects at the surface is high enough to enable redox processes involving positively charged Ru(bpy)32+/3+ to occur. Conversely, no electrochemical activity was put into evidence for Fe(CN)63-/4- species, most likely as a result of the strong electrostatic repulsion exerted by the negatively charged SiO2 surface. The concentration of surface defects was further increased by a subsequent thermal treatment in a hydrogen atmosphere which, as EIS measurements have shown, significantly promotes Ru(bpy)32+ anodic oxidation. Digital simulation of the voltammetric responses demonstrated that this treatment does not lead to a similar increase of the number of electron-donor sites. It was also found that methanol anodic oxidation at hydrogenated SiO2-NT-supported platinum results in Tafel slopes of 116-220 mV decade-1, comparable to those reported for both conventional PtRu and Pt-oxide catalysts.

Unusual behaviour of (Np,Pu)B2C

NASA Astrophysics Data System (ADS)

Klimczuk, Tomasz; Boulet, Pascal; Griveau, Jean-Christophe; Colineau, Eric; Bauer, Ernst; Falmbigl, Matthias; Rogl, Peter; Wastin, Franck

2015-02-01

Two transuranium metal boron carbides, NpB2C and PuB2C have been synthesized by argon arc melting. The crystal structures of the {Np,Pu}B2C compounds were determined from single-crystal X-ray data to be isotypic with the ThB2C-type (space group ?, a = 0.6532(2) nm; c = 1.0769(3) nm for NpB2C and a = 0.6509(2) nm; c = 1.0818(3) nm for PuB2C; Z = 9). Physical properties have been derived from polycrystalline bulk material in the temperature range from 2 to 300 K and in magnetic fields up to 9 T. Magnetic susceptibility and heat capacity data indicate the occurrence of antiferromagnetic ordering for NpB2C with a Neel temperature TN = 68 K. PuB2C is a Pauli paramagnet most likely due to a strong hybridization of s(p,d) electrons with the Pu-5f states. A pseudo-gap, as concluded from the Sommerfeld value and the electronic transport, is thought to be a consequence of the hybridization. The magnetic behaviour of {Np,Pu}B2C is consistent with the criterion of Hill.

Process Research On Polycrystalline Silicon Material (PROPSM)

NASA Technical Reports Server (NTRS)

Culik, J. S.; Wohlgemuth, J. H.

1982-01-01

Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.

No evidence that boron influences tree species distributions in lowland tropical forests of Panama.

PubMed

Turner, Benjamin L; Zalamea, Paul-Camilo; Condit, Richard; Winter, Klaus; Wright, S Joseph; Dalling, James W

2017-04-01

It was recently proposed that boron might be the most important nutrient structuring tree species distributions in tropical forests. Here we combine observational and experimental studies to test this hypothesis for lowland tropical forests of Panama. Plant-available boron is uniformly low in tropical forest soils of Panama and is not significantly associated with any of the > 500 species in a regional network of forest dynamics plots. Experimental manipulation of boron supply to seedlings of three tropical tree species revealed no evidence of boron deficiency or toxicity at concentrations likely to occur in tropical forest soils. Foliar boron did not correlate with soil boron along a local scale gradient of boron availability. Fifteen years of boron addition to a tropical forest increased plant-available boron by 70% but did not significantly change tree productivity or boron concentrations in live leaves, wood or leaf litter. The annual input of boron in rainfall accounts for a considerable proportion of the boron in annual litterfall and is similar to the pool of plant-available boron in the soil, and is therefore sufficient to preclude boron deficiency. We conclude that boron does not influence tree species distributions in Panama and presumably elsewhere in the lowland tropics. No claim to original US government works New Phytologist © 2016 New Phytologist Trust.

Understanding boron through size-selected clusters: structure, chemical bonding, and fluxionality.

PubMed

Sergeeva, Alina P; Popov, Ivan A; Piazza, Zachary A; Li, Wei-Li; Romanescu, Constantin; Wang, Lai-Sheng; Boldyrev, Alexander I

2014-04-15

Boron is an interesting element with unusual polymorphism. While three-dimensional (3D) structural motifs are prevalent in bulk boron, atomic boron clusters are found to have planar or quasi-planar structures, stabilized by localized two-center-two-electron (2c-2e) σ bonds on the periphery and delocalized multicenter-two-electron (nc-2e) bonds in both σ and π frameworks. Electron delocalization is a result of boron's electron deficiency and leads to fluxional behavior, which has been observed in B13(+) and B19(-). A unique capability of the in-plane rotation of the inner atoms against the periphery of the cluster in a chosen direction by employing circularly polarized infrared radiation has been suggested. Such fluxional behaviors in boron clusters are interesting and have been proposed as molecular Wankel motors. The concepts of aromaticity and antiaromaticity have been extended beyond organic chemistry to planar boron clusters. The validity of these concepts in understanding the electronic structures of boron clusters is evident in the striking similarities of the π-systems of planar boron clusters to those of polycyclic aromatic hydrocarbons, such as benzene, naphthalene, coronene, anthracene, or phenanthrene. Chemical bonding models developed for boron clusters not only allowed the rationalization of the stability of boron clusters but also lead to the design of novel metal-centered boron wheels with a record-setting planar coordination number of 10. The unprecedented highly coordinated borometallic molecular wheels provide insights into the interactions between transition metals and boron and expand the frontier of boron chemistry. Another interesting feature discovered through cluster studies is boron transmutation. Even though it is well-known that B(-), formed by adding one electron to boron, is isoelectronic to carbon, cluster studies have considerably expanded the possibilities of new structures and new materials using the B(-)/C analogy. It is believed that the electronic transmutation concept will be effective and valuable in aiding the design of new boride materials with predictable properties. The study of boron clusters with intermediate properties between those of individual atoms and bulk solids has given rise to a unique opportunity to broaden the frontier of boron chemistry. Understanding boron clusters has spurred experimentalists and theoreticians to find new boron-based nanomaterials, such as boron fullerenes, nanotubes, two-dimensional boron, and new compounds containing boron clusters as building blocks. Here, a brief and timely overview is presented addressing the recent progress made on boron clusters and the approaches used in the authors' laboratories to determine the structure, stability, and chemical bonding of size-selected boron clusters by joint photoelectron spectroscopy and theoretical studies. Specifically, key findings on all-boron hydrocarbon analogues, metal-centered boron wheels, and electronic transmutation in boron clusters are summarized.

Evaluation of Silica-Supported Metal and Metal Phosphide Nanoparticle Catalysts for the Hydrodeoxygenation of Guaiacol Under Ex Situ Catalytic Fast Pyrolysis Conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Griffin, Michael B.; Baddour, Frederick G.; Habas, Susan E.

A series of metal and metal phosphide catalysts were investigated for the hydrodeoxygenation of guaiacol under ex situ catalytic fast pyrolysis (CFP) conditions (350 °C, 0.5 MPa, 12 H 2:1 guaiacol, weight hourly space velocity 5 h $-$1). Ligand-capped Ni, Pt, Rh, Ni 2P, and Rh 2P nanoparticles (NPs) were prepared using solution-phase synthesis techniques and dispersed on a silica support. For the metal phosphide NP-catalysts, a synthetic route that relies on the decomposition of a single molecular precursor was employed. The reactivity of the NP-catalysts was compared to a series of reference materials including Ni/SiO 2 and Pt/SiO 2more » prepared using incipient wetness (IW) impregnation and a commercial (com) Pt/SiO 2 catalyst. The NP-Ni/SiO 2 catalyst exhibited the largest reduction in the oxygen mol% of the organic phase and outperformed the IW-Ni/SiO 2 material. Although it was less active for guaiacol conversion than NP-Ni/SiO 2, NP-Rh2P/SiO 2 demonstrated the largest production of completely deoxygenated products and the highest selectivity to anisole, benzene, and cyclohexane, suggesting that it is a promising catalyst for deoxygenation of aryl-OH bonds. Finally, the com-Pt/SiO 2 and IW-Pt/SiO 2 catalyst exhibited the highest normalized rate of guaiacol conversion per m 2 and per gram of active phase, respectively, but did not produce any completely deoxygenated products.« less

Multiple quarantine treatment using bale compression and a three-day fumigation to control Hessian fly (Diptera: Cecidomyiidae) in exported hay.

PubMed

Yokoyama, Victoria Y

2014-06-01

A multiple quarantine treatment was developed to control Hessian fly puparia, Mayetiola destructor (Say), the stage of regulatory concern in exported hay. In a commercial test using 51.589 puparia, no insects survived to the adult stage after exposure to bale compression at 137 kg/cm2 and fumigation with 61 g/28.3 m3 hydrogen phosphide for 3d. The puparia were fumigated in infested wheat seedlings in cloth bags inside compressed timothy bales placed in different locations in three replicate freight containers in a heated building. Fumigant concentrations were 345-522 ppm on day 1; 580-824 ppm on day 2; and 680-861 ppm on day 3. Monitored temperatures were < 20 degrees C in all locations allowing the fumigation temperature to be established at > or = 20 degrees C. Copper detection plate corrosion values were severe inside the freight container doors, and moderate in the middle of bales in all locations, providing visual confirmation of exposure to hydrogen phosphide. Hydrogen phosphide residues in exposed hay bales were found in trace amounts, below the U.S. Environmental Protection Agency tolerance of 0.1 ppm for animal feeds. Timothy hay used in the commercial test is the representative species for all previously exported hay and straw species. The new multiple quarantine treatment is proposed for use with all previously tested bale sizes and wrapper styles for which 3-d fumigation data has been reported, and for bales and wrappers derived from those tested.

Bimetallic Cobalt-Based Phosphide Zeolitic Imidazolate Framework: CoP x Phase-Dependent Electrical Conductivity and Hydrogen Atom Adsorption Energy for Efficient Overall Water Splitting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Junhua; Zhu, Chengzhou; Xu, Bo Z.

Cobalt-based bimetallic phosphide encapsulated in carbonized zeolitic imadazolate frameworks has been successfully synthesized and showed excellent activities toward both hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). Density functional theory calculation and electrochemical measurements reveal that the electrical conductivity and electrochemical activity are closely associated with the Co2P/CoP mixed phase behaviors upon Cu metal doping. This relationship is found to be the decisive factor for enhanced electrocatalytic performance. Moreover, the precise control of Cu content in Co-host lattice effectively alters the Gibbs free energy for H* adsorption, which is favorable for facilitating reaction kinetics. Impressively, an optimized performance hasmore » been achieved with mild Cu doping in Cu0.3Co2.7P/nitrogen-doped carbon (NC) which exhibits an ultralow overpotential of 0.19 V at 10 mA cm–2 and satisfying stability for OER. Cu0.3Co2.7P/NC also shows excellent HER activity, affording a current density of 10 mA cm–2 at a low overpotential of 0.22 V. In addition, a homemade electrolyzer with Cu0.3Co2.7P/NC paired electrodes shows 60% larger current density than Pt/ RuO2 couple at 1.74 V, along with negligible catalytic deactivation after 50 h operation. The manipulation of electronic structure by controlled incorporation of second metal sheds light on understanding and synthesizing bimetallic transition metal phosphides for electrolysis-based energy conversion.« less

Evaluation of Silica-Supported Metal and Metal Phosphide Nanoparticle Catalysts for the Hydrodeoxygenation of Guaiacol Under Ex Situ Catalytic Fast Pyrolysis Conditions

DOE PAGES

Griffin, Michael B.; Baddour, Frederick G.; Habas, Susan E.; ...

2015-09-30

A series of metal and metal phosphide catalysts were investigated for the hydrodeoxygenation of guaiacol under ex situ catalytic fast pyrolysis (CFP) conditions (350 °C, 0.5 MPa, 12 H 2:1 guaiacol, weight hourly space velocity 5 h $-$1). Ligand-capped Ni, Pt, Rh, Ni 2P, and Rh 2P nanoparticles (NPs) were prepared using solution-phase synthesis techniques and dispersed on a silica support. For the metal phosphide NP-catalysts, a synthetic route that relies on the decomposition of a single molecular precursor was employed. The reactivity of the NP-catalysts was compared to a series of reference materials including Ni/SiO 2 and Pt/SiO 2more » prepared using incipient wetness (IW) impregnation and a commercial (com) Pt/SiO 2 catalyst. The NP-Ni/SiO 2 catalyst exhibited the largest reduction in the oxygen mol% of the organic phase and outperformed the IW-Ni/SiO 2 material. Although it was less active for guaiacol conversion than NP-Ni/SiO 2, NP-Rh2P/SiO 2 demonstrated the largest production of completely deoxygenated products and the highest selectivity to anisole, benzene, and cyclohexane, suggesting that it is a promising catalyst for deoxygenation of aryl-OH bonds. Finally, the com-Pt/SiO 2 and IW-Pt/SiO 2 catalyst exhibited the highest normalized rate of guaiacol conversion per m 2 and per gram of active phase, respectively, but did not produce any completely deoxygenated products.« less

Zinc phosphide

Integrated Risk Information System (IRIS)

Zinc phoshide ; CASRN 1314 - 84 - 7 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinogenic Ef

Direct current sputtering of boron from boron/boron mixtures

DOEpatents

Timberlake, J.R.; Manos, D.; Nartowitz, E.

1994-12-13

A method for coating a substrate with boron by sputtering includes lowering the electrical resistance of a boron-containing rod to allow electrical conduction in the rod; placing the boron-containing rod inside a vacuum chamber containing substrate material to be coated; applying an electrical potential between the boron target material and the vacuum chamber; countering a current avalanche that commences when the conduction heating rate exceeds the cooling rate, and until a steady equilibrium heating current is reached; and, coating the substrate material with boron by sputtering from the boron-containing rod. 2 figures.

Recent developments with boron as a platform for novel drug design.

PubMed

Leśnikowski, Zbigniew J

2016-06-01

After decades of development, the medicinal chemistry of compounds that contain a single boron atom has matured to the present status of having equal rights with other branches of drug discovery, although it remains a relative newcomer. In contrast, the medicinal chemistry of boron clusters is less advanced, but it is expanding and may soon become a productive area of drug discovery. The author reviews the current developments of medicinal chemistry of boron and its applications in drug design. First generation boron drugs that bear a single boron atom and second generation boron drugs that utilize boron clusters as pharmacophores or modulators of bioactive molecules are discussed. The advantages and gaps in our current understanding of boron medicinal chemistry, with a special focus on boron clusters, are highlighted. Boron is not a panacea for every drug discovery problem, but there is a good chance that it will become a useful addition to the medicinal chemistry tool box. The present status of boron resembles the medicinal chemistry status of fluorine three decades ago; indeed, currently, approximately 20% of pharmaceuticals on the market contain fluorine. The fact that novel boron compounds, especially those based on abiotic polyhedral boron hydrides, are currently unfamiliar could be advantageous because organisms may be less prone to developing resistance against boron cluster-based drugs.

Understanding Boron through Size-Selected Clusters: Structure, Chemical Bonding, and Fluxionality

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sergeeva, Alina P.; Popov, Ivan A.; Piazza, Zachary A.

Conspectus Boron is an interesting element with unusual polymorphism. While three-dimensional (3D) structural motifs are prevalent in bulk boron, atomic boron clusters are found to have planar or quasi-planar structures, stabilized by localized two-center–two-electron (2c–2e) σ bonds on the periphery and delocalized multicenter–two-electron (nc–2e) bonds in both σ and π frameworks. Electron delocalization is a result of boron’s electron deficiency and leads to fluxional behavior, which has been observed in B13+ and B19–. A unique capability of the in-plane rotation of the inner atoms against the periphery of the cluster in a chosen direction by employing circularly polarized infrared radiationmore » has been suggested. Such fluxional behaviors in boron clusters are interesting and have been proposed as molecular Wankel motors. The concepts of aromaticity and antiaromaticity have been extended beyond organic chemistry to planar boron clusters. The validity of these concepts in understanding the electronic structures of boron clusters is evident in the striking similarities of the π-systems of planar boron clusters to those of polycyclic aromatic hydrocarbons, such as benzene, naphthalene, coronene, anthracene, or phenanthrene. Chemical bonding models developed for boron clusters not only allowed the rationalization of the stability of boron clusters but also lead to the design of novel metal-centered boron wheels with a record-setting planar coordination number of 10. The unprecedented highly coordinated borometallic molecular wheels provide insights into the interactions between transition metals and boron and expand the frontier of boron chemistry. Another interesting feature discovered through cluster studies is boron transmutation. Even though it is well-known that B–, formed by adding one electron to boron, is isoelectronic to carbon, cluster studies have considerably expanded the possibilities of new structures and new materials using the B–/C analogy. It is believed that the electronic transmutation concept will be effective and valuable in aiding the design of new boride materials with predictable properties. The study of boron clusters with intermediate properties between those of individual atoms and bulk solids has given rise to a unique opportunity to broaden the frontier of boron chemistry. Understanding boron clusters has spurred experimentalists and theoreticians to find new boron-based nanomaterials, such as boron fullerenes, nanotubes, two-dimensional boron, and new compounds containing boron clusters as building blocks. Here, a brief and timely overview is presented addressing the recent progress made on boron clusters and the approaches used in the authors’ laboratories to determine the structure, stability, and chemical bonding of size-selected boron clusters by joint photoelectron spectroscopy and theoretical studies. Specifically, key findings on all-boron hydrocarbon analogues, metal-centered boron wheels, and electronic transmutation in boron clusters are summarized.« less

Coulometric Study of Rates of Oxalic Acid Adsorption at a Polycrystalline Platinum Electrode

DTIC Science & Technology

2012-09-01

Coulometric Study of Rates of Oxalic Acid Adsorption at a Polycrystalline Platinum Electrode by Sol Gilman ARL-TR-6165 September 2012...6165 September 2012 Coulometric Study of Rates of Oxalic Acid Adsorption at a Polycrystalline Platinum Electrode Sol Gilman Sensors and...3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE Coulometric Study of Rates of Oxalic Acid Adsorption at a Polycrystalline Platinum Electrode

Surface properties of atomically flat poly-crystalline SrTiO3

PubMed Central

Woo, Sungmin; Jeong, Hoidong; Lee, Sang A.; Seo, Hosung; Lacotte, Morgane; David, Adrian; Kim, Hyun You; Prellier, Wilfrid; Kim, Yunseok; Choi, Woo Seok

2015-01-01

Comparison between single- and the poly-crystalline structures provides essential information on the role of long-range translational symmetry and grain boundaries. In particular, by comparing single- and poly-crystalline transition metal oxides (TMOs), one can study intriguing physical phenomena such as electronic and ionic conduction at the grain boundaries, phonon propagation, and various domain properties. In order to make an accurate comparison, however, both single- and poly-crystalline samples should have the same quality, e.g., stoichiometry, crystallinity, thickness, etc. Here, by studying the surface properties of atomically flat poly-crystalline SrTiO3 (STO), we propose an approach to simultaneously fabricate both single- and poly-crystalline epitaxial TMO thin films on STO substrates. In order to grow TMOs epitaxially with atomic precision, an atomically flat, single-terminated surface of the substrate is a prerequisite. We first examined (100), (110), and (111) oriented single-crystalline STO surfaces, which required different annealing conditions to achieve atomically flat surfaces, depending on the surface energy. A poly-crystalline STO surface was then prepared at the optimum condition for which all the domains with different crystallographic orientations could be successfully flattened. Based on our atomically flat poly-crystalline STO substrates, we envision expansion of the studies regarding the TMO domains and grain boundaries. PMID:25744275

Very low temperature (450 °C) selective epitaxial growth of heavily in situ boron-doped SiGe layers

NASA Astrophysics Data System (ADS)

Aubin, J.; Hartmann, J. M.; Veillerot, M.; Essa, Z.; Sermage, B.

2015-11-01

We have investigated the feasibility of selectively growing SiGe:B layers at 450 °C, 20 Torr in a 300 mm industrial reduced pressure chemical vapor deposition tool. A reduced H2 carrier gas mass-flow has been used in order to have acceptable growth rates at such a temperature, which is very low indeed. We have first of all studied on blanket Si wafers the in situ boron doping of SiGe with Si2H6, GeH4 and B2H6. A growth rate increase by a factor close to 7 together with a Ge concentration decrease from 53% down to 32% occurred as the diborane mass-flow increased. Very high B+ ion concentrations were obtained in layers that were single crystalline and smooth. Their concentration increased almost linearly with the B2H6 mass-flow, from 1.8 up to 8.3 × 1020 cm-3. The associated resistivity dropped from 0.43 down to 0.26 mΩ cm. We have then tested whether or not selectivity versus SiO2 could be achieved by adding various amounts of HCl to Si2H6 + GeH4 +B2H6. Single crystalline growth rates of intrinsic SiGe(:B) on Si were very similar to poly-crystalline growth rates on SiO2-covered substrates irrespective of the HCl flow. Straightforward selectivity was thus not feasible with a co-flow approach. As a consequence, a 450 °C deposition/etch (DE) process was evaluated. Growth occurred at 20 Torr with the above-mentioned chemistry, while the selective etch of poly-SiGe:B versus c-SiGe:B was conducted at 740 Torr with a medium HCl mass-flow (F(HCl)/F(H2) = 0.2) and a high H2 flow. A 2.2 etch selectivity was achieved while retaining single crystalline if slightly rough SiGe:B layers.

Efficient Boron-Carbon-Nitrogen Nanotube Formation Via Combined Laser-Gas Flow Levitation

NASA Technical Reports Server (NTRS)

Whitney, R. Roy (Inventor); Smith, Michael W. (Inventor); Jordan, Kevin (Inventor)

2015-01-01

A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz.

Structural stability and electronic properties of an octagonal allotrope of two dimensional boron nitride.

PubMed

Takahashi, Lauren; Takahashi, Keisuke

2017-03-27

An octagonal allotrope of two dimensional boron nitride is explored through first principles calculations. Calculations show that two dimensional octagonal boron nitride can be formed with a binding energy comparable to two dimensional hexagonal boron nitride. In addition, two dimensional octagonal boron nitride is found to have a band gap smaller than two dimensional hexagonal boron nitride, suggesting the possibility of semiconductive attributes. Two dimensional octagonal boron nitride also has the ability to layer through physisorption. Defects present within two dimensional octagonal boron nitride also lead toward the introduction of a magnetic moment through the absence of boron atoms. The presence of defects is also found to render both hexagonal and octagonal boron nitrides reactive against hydrogen, where greater reactivity is seen in the presence of nitrogen. Thus, two dimensional octagonal boron nitride is confirmed with potential to tailor properties and reactivity through lattice shape and purposeful introduction of defects.

Mechanisms limiting the performance of large grain polycrystalline silicon solar cells

NASA Technical Reports Server (NTRS)

Culik, J. S.; Alexander, P.; Dumas, K. A.; Wohlgemuth, J. W.

1984-01-01

The open-circuit voltage and short-circuit current of large-grain (1 to 10 mm grain diameter) polycrystalline silicon solar cells is determined by the minority-carrier diffusion length within the bulk of the grains. This was demonstrated by irradiating polycrystalline and single-crystal (Czochralski) silicon solar cells with 1 MeV electrons to reduce their bulk lifetime. The variation of short-circuit current with minority-carrier diffusion length for the polycrystalline solar cells is identical to that of the single-crystal solar cells. The open-circuit voltage versus short-circuit current characteristic of the polycrystalline solar cells for reduced diffusion lengths is also identical to that of the single-crystal solar cells. The open-circuit voltage of the polycrystalline solar cells is a strong function of quasi-neutral (bulk) recombination, and is reduced only slightly, if at all, by grain-boundary recombination.

In vivo and in vitro effects of boron and boronated compounds.

PubMed

Benderdour, M; Bui-Van, T; Dicko, A; Belleville, F

1998-03-01

Boron is ubiquitously present in soils and water. Associated with pectin it is essential for vascular plants as a component of cell walls, and it stabilizes cell membranes. It is required for the growth of pollen tubes and is involved in membrane transport, stimulating H(+)-pumping ATPase activity and K+ uptake. However, a high boron concentration in the soils is toxic to plants and some boronated derivatives are used as herbicides. An absolute requirement for boron has not been definitively demonstrated in animals and humans. However, experiments with boron supplementation or deprivation show that boron is involved in calcium and bone metabolism, and its effects are more marked when other nutrients (cholecalciferol, magnesium) are deficient. Boron supplementation increases the serum concentration of 17 beta-estradiol and testosterone but boron excess has toxic effects on reproductive function. Boron may be involved in cerebral function via its effects on the transport across membranes. It affects the synthesis of the extracellular matrix and is beneficial in wound healing. Usual dietary boron consumption in humans is 1-2 mg/day for adults. As boron has been shown to have biological activity, research into the chemistry of boronated compounds has increased. Boronated compounds have been shown to be potent anti-osteoporotic, anti-inflammatory, hypolipemic, anti-coagulant and anti-neoplastic agents both in vitro and in vivo in animals.

Efficient boron-carbon-nitrogen nanotube formation via combined laser-gas flow levitation

DOEpatents

Whitney, R Roy; Jordan, Kevin; Smith, Michael W

2015-03-24

A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z.

Efficient boron nitride nanotube formation via combined laser-gas flow levitation

DOEpatents

Whitney, R. Roy; Jordan, Kevin; Smith, Michael

2014-03-18

A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z.

Efficient Boron Nitride Nanotube Formation via Combined Laser-Gas Flow Levitation

NASA Technical Reports Server (NTRS)

Whitney, R. Roy (Inventor); Jordan, Kevin (Inventor); Smith, Michael W. (Inventor)

2014-01-01

A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B(sub x)C(sub y)N(sub z) The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B(sub x)C(sub y)N(sub z).

Direct current sputtering of boron from boron/coron mixtures

DOEpatents

Timberlake, John R.; Manos, Dennis; Nartowitz, Ed

1994-01-01

A method for coating a substrate with boron by sputtering includes lowering the electrical resistance of a boron-containing rod to allow electrical conduction in the rod; placing the boron-containing rod inside a vacuum chamber containing substrate material to be coated; applying an electrical potential between the boron target material and the vacuum chamber; countering a current avalanche that commences when the conduction heating rate exceeds the cooling rate, and until a steady equilibrium heating current is reached; and, coating the substrate material with boron by sputtering from the boron-containing rod.

Boron stress response and accumulation potential of the extremely tolerant species Puccinellia frigida.

PubMed

Rámila, Consuelo D P; Contreras, Samuel A; Di Domenico, Camila; Molina-Montenegro, Marco A; Vega, Andrea; Handford, Michael; Bonilla, Carlos A; Pizarro, Gonzalo E

2016-11-05

Phytoremediation is a promising technology to tackle boron toxicity, which restricts agricultural activities in many arid and semi-arid areas. Puccinellia frigida is a perennial grass that was reported to hyperaccumulate boron in extremely boron-contaminated sites. To further investigate its potential for phytoremediation, we determined its response to boron stress under controlled conditions (hydroponic culture). Also, as a first step towards understanding the mechanisms underlying its extreme tolerance, we evaluated the presence and expression of genes related with boron tolerance. We found that P. frigida grew normally even at highly toxic boron concentrations in the medium (500mg/L), and within its tissues (>5000mg/kg DW). We postulate that the strategies conferring this extreme tolerance involve both restricting boron accumulation and an internal tolerance mechanism; this is consistent with the identification of putative genes involved in both mechanisms, including the expression of a possible boron efflux transporter. We also found that P. frigida hyperaccumulated boron over a wide range of boron concentrations. We propose that P. frigida could be used for boron phytoremediation strategies in places with different soil characteristics and boron concentrations. Further studies should pave the way for the development of clean and low-cost solutions to boron toxicity problems. Copyright © 2016 Elsevier B.V. All rights reserved.

Atmospheric contribution to boron enrichment in aboveground wheat tissues.

PubMed

Wang, Cheng; Ji, Junfeng; Chen, Mindong; Zhong, Cong; Yang, Zhongfang; Browne, Patrick

2017-05-01

Boron is an essential trace element for all organisms and has both beneficial and harmful biological functions. A particular amount of boron is discharged into the environment every year because of industrial activities; however, the effects of environmental boron emissions on boron accumulation in cereals has not yet been estimated. The present study characterized the accumulation of boron in wheat under different ecological conditions in the Yangtze River Delta (YRD) area. This study aimed to estimate the effects of atmospheric boron that is associated with industrial activities on boron accumulation in wheat. The results showed that the concentrations of boron in aboveground wheat tissues from the highly industrialized region were significantly higher than those from the agriculture-dominated region, even though there was no significant difference in boron content in soils. Using the model based on the translocation coefficients of boron in the soil-wheat system, we estimated that the contribution of atmosphere to boron accumulation in wheat straw in the highly industrialized region exceeded that in the agriculture-dominated region by 36%. In addition, from the environmental implication of the model, it was estimated that the development of boron-utilizing industries had elevated the concentration of boron in aboveground wheat tissues by 28-53%. Copyright © 2017 Elsevier Ltd. All rights reserved.

Identification of a Novel System for Boron Transport: Atr1 Is a Main Boron Exporter in Yeast▿ †

PubMed Central

Kaya, Alaattin; Karakaya, Huseyin C.; Fomenko, Dmitri E.; Gladyshev, Vadim N.; Koc, Ahmet

2009-01-01

Boron is a micronutrient in plants and animals, but its specific roles in cellular processes are not known. To understand boron transport and functions, we screened a yeast genomic DNA library for genes that confer resistance to the element in Saccharomyces cerevisiae. Thirty boron-resistant transformants were isolated, and they all contained the ATR1 (YML116w) gene. Atr1 is a multidrug resistance transport protein belonging to the major facilitator superfamily. C-terminal green fluorescent protein-tagged Atr1 localized to the cell membrane and vacuole, and ATR1 gene expression was upregulated by boron and several stress conditions. We found that atr1Δ mutants were highly sensitive to boron treatment, whereas cells overexpressing ATR1 were boron resistant. In addition, atr1Δ cells accumulated boron, whereas ATR1-overexpressing cells had low intracellular levels of the element. Furthermore, atr1Δ cells showed stronger boron-dependent phenotypes than mutants deficient in genes previously reported to be implicated in boron metabolism. ATR1 is widely distributed in bacteria, archaea, and lower eukaryotes. Our data suggest that Atr1 functions as a boron efflux pump and is required for boron tolerance. PMID:19414602

Alkynyl Moiety for Triggering 1,2‐Metallate Shifts: Enantiospecific sp2–sp3 Coupling of Boronic Esters with p‐Arylacetylenes

PubMed Central

Ganesh, Venkataraman; Odachowski, Marcin

2017-01-01

Abstract The enantiospecific coupling of secondary and tertiary boronic esters to aromatics has been investigated. Using p‐lithiated phenylacetylenes and a range of boronic esters coupling has been achieved by the addition of N‐bromosuccinimide (NBS). The alkyne functionality of the intermediate boronate complex reacts with NBS triggering the 1,2‐migration of the group on boron to carbon giving a dearomatized bromoallene intermediate. At this point elimination and rearomatization occurs with neopentyl boronic esters, giving the coupled products. However, using pinacol boronic esters, the boron moiety migrates to the adjacent carbon resulting in formation of ortho boron‐incorporated coupled products. The synthetic utility of the boron incorporated product has been demonstrated by orthogonal transformation of both the alkyne and boronic ester functionalities. PMID:28618129

Methods of producing continuous boron carbide fibers

DOEpatents

Garnier, John E.; Griffith, George W.

2015-12-01

Methods of producing continuous boron carbide fibers. The method comprises reacting a continuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400.degree. C. to approximately 2200.degree. C. Continuous boron carbide fibers, continuous fibers comprising boron carbide, and articles including at least a boron carbide coating are also disclosed.

In Vivo Boron Uptake Determination for Boron Neutron Capture Synovectomy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Binello, Emanuela; Shortkroff, Sonya; Yanch, Jacquelyn C.

1999-06-06

Boron neutron capture synovectomy (BNCS) has been proposed as a new application of the boron neutron capture reaction for the treatment of rheumatoid arthritis. In BNCS, a boron compound is injected into the joint space, where it is taken up by the synovium. The joint is then irradiated with neutrons of a desired energy range, inducing the boron neutron capture reaction in boron-loaded cells. Boron uptake by the synovium is an important parameter in the assessment of the potential of BNCS and in the determination of whether to proceed to animal irradiations for the testing of therapeutic efficacy. We presentmore » results from an investigation of boron uptake in vivo by the synovium.« less

40 CFR 180.284 - Zinc phosphide; tolerances for residues.

Code of Federal Regulations, 2010 CFR

2010-07-01

... agricultural commodities as follows: Commodity Parts per million Alfalfa, forage 0.2 Alfalfa, hay 0.2 Barley... Expiration/Revocation Date Alfalfa, forage 1.0 12/31/05 Alfalfa, hay 1.0 12/31/05 Clover, forage 0.1 12/31/05...

Corrosion of Cellular Metals in Marine Environments

DTIC Science & Technology

2006-09-30

phosphides and silicides during the brazing process. Phosphorus, particularly, which is very proficient at depressing the filler alloy melting point...theories of corrosion were constructed for isolated AL-6XN in neutral sodium chloride solutions. This also demonstrated the intrinsic resistance of AL

Polysilicon photoconductor for integrated circuits

DOEpatents

Hammond, Robert B.; Bowman, Douglas R.

1989-01-01

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

Polysilicon photoconductor for integrated circuits

DOEpatents

Hammond, Robert B.; Bowman, Douglas R.

1990-01-01

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

Polysilicon photoconductor for integrated circuits

DOEpatents

Hammond, R.B.; Bowman, D.R.

1989-04-11

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response. 6 figs.

Fragment approach to the electronic structure of τ -boron allotrope

NASA Astrophysics Data System (ADS)

Karmodak, Naiwrit; Jemmis, Eluvathingal D.

2017-04-01

The presence of nonconventional bonding features is an intriguing part of elemental boron. The recent addition of τ boron to the family of three-dimensional boron allotropes is no exception. We provide an understanding of the electronic structure of τ boron using a fragment molecular approach, where the effect of symmetry reduction on skeletal bands of B12 and the B57 fragments are examined qualitatively by analyzing the projected density of states of these fragments. In spite of the structural resemblance to β boron, the reduction of symmetry from a rhombohedral space group to the orthorhombic one destabilizes the bands and reduces the electronic requirements. This suggests the presence of the partially occupied boron sites, as seen for a β boron unit cell, and draws the possibility for the existence of different energetically similar polymorphs. τ boron has a lower binding energy than β boron.

An open canvas--2D materials with defects, disorder, and functionality.

PubMed

Zou, Xiaolong; Yakobson, Boris I

2015-01-20

CONSPECTUS: While some exceptional properties are unique to graphene only (its signature Dirac-cone gapless dispersion, carrier mobility, record strength), other features are common to other two-dimensional materials. The broader family "beyond graphene" offers greater choices to be explored and tailored for various applications. Transition metal dichalcogenides (TMDCs), hexagonal boron nitride (h-BN), and 2D layers of pure elements, like phosphorus or boron, can complement or even surpass graphene in many ways and uses, ranging from electronics and optoelectronics to catalysis and energy storage. Their availability greatly relies on chemical vapor deposition growth of large samples, which are highly polycrystalline and include interfaces such as edges, heterostructures, and grain boundaries, as well as dislocations and point defects. These imperfections do not always degrade the material properties, but they often bring new physics and even useful functionality. It turns particularly interesting in combination with the sheer openness of all 2D sheets, fully exposed to the environment, which, as we show herein, can change and tune the defect structures and consequently all their qualities, from electronic levels, conductivity, magnetism, and optics to structural mobility of dislocations and catalytic activities. In this Account, we review our progress in understanding of various defects. We begin by expressing the energy of an arbitrary graphene edge analytically, so that the environment is regarded by "chemical phase shift". This has profound implications for graphene and carbon nanotube growth. Generalization of this equation to heteroelemental BN gives a method to determine the energy for arbitrary edges of BN, depending on the partial chemical potentials. This facilitates the tuning of the morphology and electronic and magnetic properties of pure BN or hybrid BN|C systems. Applying a similar method to three-atomic-layer TMDCs reveals more diverse edge structures for thermodynamically stable flakes. Moreover, CVD samples show new types of edge reconstruction, providing insight into the nonequilibrium growth process. Combining dislocation theory with first-principles computations, we could predict the dislocation cores for BN and TMDC and reveal their variable chemical makeup. This lays the foundation for the unique sensitivity to ambient conditions. For example, partial occupation of the defect states for dislocations in TMDCs renders them intrinsically magnetic. The exchange coupling between electrons from neighboring dislocations in grain boundaries further makes them half-metallic, which may find its applications in spintronics. Finally, brief discussion of monoelemental 2D-layer phosphorus and especially the structures and growth routes of 2D boron shows how theoretical assessment can help the quest for new synthetic routes.

The Physiological Role of Boron on Health.

PubMed

Khaliq, Haseeb; Juming, Zhong; Ke-Mei, Peng

2018-03-15

Boron is an essential mineral that plays an important role in several biological processes. Boron is required for growth of plants, animals, and humans. There are increasing evidences of this nutrient showing a variety of pleiotropic effects, ranging from anti-inflammatory and antioxidant effects to the modulation of different body systems. In the past few years, the trials showed disease-related polymorphisms of boron in different species, which has drawn attention of scientists to the significance of boron to health. Low boron profile has been related with poor immune function, increased risk of mortality, osteoporosis, and cognitive deterioration. High boron status revealed injury to cell and toxicity in different animals and humans. Some studies have shown some benefits of higher boron status, but findings have been generally mixed, which perhaps accentuates the fact that dietary intake will benefit only if supplemental amount is appropriate. The health benefits of boron are numerous in animals and humans; for instance, it affects the growth at safe intake. Central nervous system shows improvement and immune organs exhibit enhanced immunity with boron supplementation. Hepatic metabolism also shows positive changes in response to dietary boron intake. Furthermore, animals and human fed diets supplemented with boron reveal improved bone density and other benefits including embryonic development, wound healing, and cancer therapy. It has also been reported that boron affects the metabolism of several enzymes and minerals. In the background of these health benefits, low or high boron status is giving cause for concern. Additionally, researches are needed to further elucidate the mechanisms of boron effects, and determine the requirements in different species.

Engineering a nanotubular mesoporous cobalt phosphide electrocatalyst by the Kirkendall effect towards highly efficient hydrogen evolution reactions.

PubMed

Miao, Yue-E; Li, Fei; Zhou, Yu; Lai, Feili; Lu, Hengyi; Liu, Tianxi

2017-11-02

Tailoring the size and controlling the morphology of particular nano-architectures are considered as two promising strategies to improve the catalytic performance of metal nanocrystals towards hydrogen evolution reactions (HERs). Herein, mesoporous cobalt phosphide nanotubes (CoP-NTs) with a three-dimensional network structure have been obtained through a facile and efficient electrospinning technique combined with thermal stabilization and phosphorization treatments. The thermal stabilization process has been demonstrated to play a key role in the morphological tailoring of Co 3 O 4 nanotubes (Co 3 O 4 -NTs). As a result, the CoP-NTs show one-dimensional hollow tubular architecture instead of forming a worm-like tubular CoP structure (W-CoP-NTs) or severely aggregated CoP powder (CoP-NPs) which originate from the Co 3 O 4 nanotubes without thermal stabilization treatment and Co 3 O 4 nanoparticles, respectively. Satisfyingly, under an optimized phosphorization degree, the CoP-NT electrode exhibits a low onset overpotential of 53 mV with a low Tafel slope of 50 mV dec -1 during the HER process. Furthermore, the CoP-NT electrode is capable of driving a large cathodic current density of 10 mA cm -2 at an overpotential of 152 mV, which is much lower than those of its contrast samples, i.e. CoP-NPs (211 mV) and W-CoP-NTs (230 mV). Therefore, this work provides a feasible and general strategy for constructing three-dimensionally organized mesoporous non-noble metal phosphide nanotubes as promising alternative high-performance electrocatalysts for the commercial platinum ones.

Deoxygenation of Palmitic Acid on Unsupported Transition-Metal Phosphides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peroni, Marco; Lee, Insu; Huang, Xiaoyang

Abstract Highly active bulk transition metal phosphides (WP, MoP, and Ni2P) were synthesized for the catalytic hydrodeoxygenation of palmitic acid, hexadecanol, hexadecanal, and microalgae oil. The specific activities positively correlated with the concentration of exposed metal sites, although the relative rates changed with temperature due to activation energies varying from 57 kJ·mol-1 for MoP to 142 kJ·mol-1 for WP. The reduction of the fatty acid to the aldehyde occurs through a Langmuir-Hinshelwood mechanism, where the rate-determining step is the addition of the second H to the hydrocarbon. On WP, the conversion of palmitic acid proceeds via R-CH2COOH R-CH2CHO R-CH2CH2OH R-CHCH2more » R-CH2CH3 (hydrodeoxygenation). Decarbonylation of the intermittently formed aldehyde (R-CH2COOH R-CH2CHO R-CH3) was an important pathway on MoP and Ni2P. Conversion via dehydration to a ketene, followed by its decarbonylation occurred only on Ni2P. The rates of alcohol dehydration (R-CH2CH2OH R-CHCH2) correlate with the concentration of Lewis acid sites of the phosphides. Acknowledgements The authors would like to thank Roel Prins for the critical discussion of the results. We are also grateful to Xaver Hecht for technical support. Funding by the German Federal Ministry of Food and Agriculture in the framework of the Advanced Biomass Value project (03SF0446A) is gratefully acknowledged. J.A.L. acknowledges support for his contribution by the U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences & Biosciences for exploring non-oxidic supports for deoxygenation reactions.« less

Process Development of Gallium Nitride Phosphide Core-Shell Nanowire Array Solar Cell

NASA Astrophysics Data System (ADS)

Chuang, Chen

Dilute Nitride GaNP is a promising materials for opto-electronic applications due to its band gap tunability. The efficiency of GaNxP1-x /GaNyP1-y core-shell nanowire solar cell (NWSC) is expected to reach as high as 44% by 1% N and 9% N in the core and shell, respectively. By developing such high efficiency NWSCs on silicon substrate, a further reduction of the cost of solar photovoltaic can be further reduced to 61$/MWh, which is competitive to levelized cost of electricity (LCOE) of fossil fuels. Therefore, a suitable NWSC structure and fabrication process need to be developed to achieve this promising NWSC. This thesis is devoted to the study on the development of fabrication process of GaNxP 1-x/GaNyP1-y core-shell Nanowire solar cell. The thesis is divided into two major parts. In the first parts, previously grown GaP/GaNyP1-y core-shell nanowire samples are used to develop the fabrication process of Gallium Nitride Phosphide nanowire solar cell. The design for nanowire arrays, passivation layer, polymeric filler spacer, transparent col- lecting layer and metal contact are discussed and fabricated. The property of these NWSCs are also characterized to point out the future development of Gal- lium Nitride Phosphide NWSC. In the second part, a nano-hole template made by nanosphere lithography is studied for selective area growth of nanowires to improve the structure of core-shell NWSC. The fabrication process of nano-hole templates and the results are presented. To have a consistent features of nano-hole tem- plate, the Taguchi Method is used to optimize the fabrication process of nano-hole templates.

Boron nitride composites

DOEpatents

Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

2017-02-21

According to one embodiment, a composite product includes: a matrix material including hexagonal boron nitride and one or more borate binders; and a plurality of cubic boron nitride particles dispersed in the matrix material. According to another embodiment, a composite product includes: a matrix material including hexagonal boron nitride and amorphous boron nitride; and a plurality of cubic boron nitride particles dispersed in the matrix material.

The major facilitator superfamily transporter Knq1p modulates boron homeostasis in Kluyveromyces lactis.

PubMed

Svrbicka, Alexandra; Toth Hervay, Nora; Gbelska, Yvetta

2016-03-01

Boron is an essential micronutrient for living cells, yet its excess causes toxicity. To date, the mechanisms of boron toxicity are poorly understood. Recently, the ScATR1 gene has been identified encoding the main boron efflux pump in Saccharomyces cerevisiae. In this study, we analyzed the ScATR1 ortholog in Kluyveromyces lactis--the KNQ1 gene, to understand whether it participates in boron stress tolerance. We found that the KNQ1 gene, encoding a permease belonging to the major facilitator superfamily, is required for K. lactis boron tolerance. Deletion of the KNQ1 gene led to boron sensitivity and its overexpression increased K. lactis boron tolerance. The KNQ1 expression was induced by boron and the intracellular boron concentration was controlled by Knq1p. The KNQ1 promoter contains two putative binding motifs for the AP-1-like transcription factor KlYap1p playing a central role in oxidative stress defense. Our results indicate that the induction of the KNQ1 expression requires the presence of KlYap1p and that Knq1p like its ortholog ScAtr1p in S. cerevisiae functions as a boron efflux pump providing boron resistance in K. lactis.

Anode performance of boron-doped graphites prepared from shot and sponge cokes

NASA Astrophysics Data System (ADS)

Liu, Tao; Luo, Ruiying; Yoon, Seong-Ho; Mochida, Isao

The structures and anode performances of graphitized pristine and boron-doped shot and sponge cokes have been comparatively studied by means of scanning electron microscope (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and galvanostatic measurement. The results show that high degree of graphitization can be obtained by the substituted boron atom in the carbon lattice, and boron in the resultant boron-doped graphites mainly exist in the form of boron carbide and boron substituted in the carbon lattice. Both of boron-doped graphites from shot and sponge cokes obtain discharge capacity of 350 mAh g -1 and coulombic efficiency above 90%. Apart from commonly observed discharge plateau for graphite, boron-doped samples in this study also show a small plateau at ca. 0.06 V. This phenomenon can be explained that Li ion stores in the site to be void-like spaces that are produced by "molecular bridging" between the edge sites of graphene layer stack with a release of boron atoms substituted at the edge of graphene layer. The effect of the amount of boron dopant and graphitization temperature on the anode performance of boron-doped graphite are also investigated in this paper.

On the failure load and mechanism of polycrystalline graphene by nanoindentation

PubMed Central

Sha, Z. D.; Wan, Q.; Pei, Q. X.; Quek, S. S.; Liu, Z. S.; Zhang, Y. W.; Shenoy, V. B.

2014-01-01

Nanoindentation has been recently used to measure the mechanical properties of polycrystalline graphene. However, the measured failure loads are found to be scattered widely and vary from lab to lab. We perform molecular dynamics simulations of nanoindentation on polycrystalline graphene at different sites including grain center, grain boundary (GB), GB triple junction, and holes. Depending on the relative position between the indenter tip and defects, significant scattering in failure load is observed. This scattering is found to arise from a combination of the non-uniform stress state, varied and weakened strengths of different defects, and the relative location between the indenter tip and the defects in polycrystalline graphene. Consequently, the failure behavior of polycrystalline graphene by nanoindentation is critically dependent on the indentation site, and is thus distinct from uniaxial tensile loading. Our work highlights the importance of the interaction between the indentation tip and defects, and the need to explicitly consider the defect characteristics at and near the indentation site in polycrystalline graphene during nanoindentation. PMID:25500732

Magnetorheological finishing of chemical-vapor deposited zinc sulfide via chemically and mechanically modified fluids.

PubMed

Salzman, Sivan; Romanofsky, Henry J; Giannechini, Lucca J; Jacobs, Stephen D; Lambropoulos, John C

2016-02-20

We describe the anisotropy in the material removal rate (MRR) of the polycrystalline, chemical-vapor deposited zinc sulfide (ZnS). We define the polycrystalline anisotropy via microhardness and chemical erosion tests for four crystallographic orientations of ZnS: (100), (110), (111), and (311). Anisotropy in the MRR was studied under magnetorheological finishing (MRF) conditions. Three chemically and mechanically modified magnetorheological (MR) fluids at pH values of 4, 5, and 6 were used to test the MRR variations among the four single-crystal planes. When polishing the single-crystal planes and the polycrystalline with pH 5 and pH 6 MR fluids, variations were found in the MRR among the four single-crystal planes and surface artifacts were observed on the polycrystalline material. When polishing the single-crystal planes and the polycrystalline with the modified MR fluid at pH 4, however, minimal variation was observed in the MRR among the four orientations and a reduction in surface artifacts was achieved on the polycrystalline material.

Process Research On Polycrystalline Silicon Material (PROPSM). [flat plate solar array project

NASA Technical Reports Server (NTRS)

Culik, J. S.

1983-01-01

The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

Nondestructive method and apparatus for imaging grains in curved surfaces of polycrystalline articles

DOEpatents

Carpenter, Donald A.

1995-01-01

A nondestructive method, and associated apparatus, are provided for determining the grain flow of the grains in a convex curved, textured polycrystalline surface. The convex, curved surface of a polycrystalline article is aligned in a horizontal x-ray diffractometer and a monochromatic, converging x-ray beam is directed onto the curved surface of the polycrystalline article so that the converging x-ray beam is diffracted by crystallographic planes of the grains in the polycrystalline article. The diffracted x-ray beam is caused to pass through a set of horizontal, parallel slits to limit the height of the beam and thereafter. The linear intensity of the diffracted x-ray is measured, using a linear position sensitive proportional counter, as a function of position in a direction orthogonal to the counter so as to generate two dimensional data. An image of the grains in the curved surface of the polycrystalline article is provided based on the two-dimensional data.

Nondestructive method and apparatus for imaging grains in curved surfaces of polycrystalline articles

DOEpatents

Carpenter, D.A.

1995-05-23

A nondestructive method, and associated apparatus, are provided for determining the grain flow of the grains in a convex curved, textured polycrystalline surface. The convex, curved surface of a polycrystalline article is aligned in a horizontal x-ray diffractometer and a monochromatic, converging x-ray beam is directed onto the curved surface of the polycrystalline article so that the converging x-ray beam is diffracted by crystallographic planes of the grains in the polycrystalline article. The diffracted x-ray beam is caused to pass through a set of horizontal, parallel slits to limit the height of the beam and thereafter. The linear intensity of the diffracted x-ray is measured, using a linear position sensitive proportional counter, as a function of position in a direction orthogonal to the counter so as to generate two dimensional data. An image of the grains in the curved surface of the polycrystalline article is provided based on the two-dimensional data. 7 Figs.

Electron paramagnetic resonance of deep boron in silicon carbide

NASA Astrophysics Data System (ADS)

Baranov, P. G.; Mokhov, E. N.

1996-04-01

In this article we report the first EPR observation of deep boron centres in silicon carbide. A direct identification of the boron atom involved in the defect centre, considered as deep boron, has been established by the presence of a hyperfine interaction with 0268-1242/11/4/005/img1 and 0268-1242/11/4/005/img2 nuclei in isotope-enriched 6H-SiC:B crystals. Deep boron centres were shown from EPR spectra to have axial symmetry along the hexagonal axis. A correspondence between the EPR spectra and the luminescence, ODMR and DLTS spectra of deep boron centres has been indicated. The structural model for a deep boron centre as a boron - vacancy pair is presented and the evidence for bistable behaviour of deep boron centres is discussed.

Method of manufacture of atomically thin boron nitride

DOEpatents

Zettl, Alexander K

2013-08-06

The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

Highly Doped Polycrystalline Silicon Microelectrodes Reduce Noise in Neuronal Recordings In Vivo

PubMed Central

Saha, Rajarshi; Jackson, Nathan; Patel, Chetan; Muthuswamy, Jit

2013-01-01

The aims of this study are to 1) experimentally validate for the first time the nonlinear current-potential characteristics of bulk doped polycrystalline silicon in the small amplitude voltage regimes (0–200 μV) and 2) test if noise amplitudes (0–15 μV) from single neuronal electrical recordings get selectively attenuated in doped polycrystalline silicon microelectrodes due to the above property. In highly doped polycrystalline silicon, bulk resistances of several hundred kilo-ohms were experimentally measured for voltages typical of noise amplitudes and 9–10 kΩ for voltages typical of neural signal amplitudes (>150–200 μV). Acute multiunit measurements and noise measurements were made in n = 6 and n = 8 anesthetized adult rats, respectively, using polycrystalline silicon and tungsten microelectrodes. There was no significant difference in the peak-to-peak amplitudes of action potentials recorded from either microelectrode (p > 0.10). However, noise power in the recordings from tungsten microelectrodes (26.36 ± 10.13 pW) was significantly higher (p < 0.001) than the corresponding value in polycrystalline silicon microelectrodes (7.49 ± 2.66 pW). We conclude that polycrystalline silicon microelectrodes result in selective attenuation of noise power in electrical recordings compared to tungsten microelectrodes. This reduction in noise compared to tungsten microelectrodes is likely due to the exponentially higher bulk resistances offered by highly doped bulk polycrystalline silicon in the range of voltages corresponding to noise in multiunit measurements. PMID:20667815

Thermodynamics of Boron Removal from Silicon Using CaO-MgO-Al2O3-SiO2 Slags

NASA Astrophysics Data System (ADS)

Jakobsson, Lars Klemet; Tangstad, Merete

2018-04-01

Slag refining is one of few metallurgical methods for removal of boron from silicon. It is important to know the thermodynamic properties of boron in slags to understand the refining process. The relation of the distribution coefficient of boron to the activity of silica, partial pressure of oxygen, and capacity of slags for boron oxide was investigated. The link between these parameters explains why the distribution coefficient of boron does not change much with changing slag composition. In addition, the thermodynamic properties of dilute boron oxide in CaO-MgO-Al2O3-SiO2 slags was determined. The ratio of the activity coefficient of boron oxide and silica was found to be the most important parameter for understanding changes in the distribution coefficient of boron for different slags. Finally, the relation between the activity coefficient of boron oxide and slag structure was investigated. It was found that the structure can explain how the distribution coefficient of boron changes depending on slag composition.

Boron removal from aqueous solution by direct contact membrane distillation.

PubMed

Hou, Deyin; Wang, Jun; Sun, Xiangcheng; Luan, Zhaokun; Zhao, Changwei; Ren, Xiaojing

2010-05-15

The removal of boron from aqueous solution by direct contact membrane distillation (DCMD) was studied with self-prepared polyvinylidene fluoride (PVDF) hollow fiber membranes in the present work. The effect of pH, boron concentration, temperature and salt concentration of the feed solution on the boron rejection was investigated. The experimental results indicated that boron rejection was less dependent on the feed pH and salt concentration. DCMD process had high boron removal efficiency (>99.8%) and the permeate boron was below the maximum permissible level even at feed concentration as high as 750 mg/L. Although the permeate flux was enhanced exponentially with the feed temperature increasing, the influence of feed temperature on the boron rejection could be neglected. Finally, the natural groundwater sample containing 12.7 mg/L of boron was treated by DCMD process. The permeate boron kept below 20 microg/L whether the feed was acidified or not, but pre-acidification was helpful to maintain the permeate flux stability. All the experimental results indicated that DCMD could be efficiently used for boron removal from aqueous solution. Copyright (c) 2009 Elsevier B.V. All rights reserved.

Effects on environment and agriculture of geothermal wastewater and boron pollution in great Menderes basin.

PubMed

Koç, Cengiz

2007-02-01

Boron toxicity is an important disorder that can be limit plant growth on soils of arid and semi arid environments through the world. High concentrations of Boron may occur naturally in the soil or in groundwater, or be added to the soil from mining, fertilizers, or irrigation water. Off all the potential resources, irrigation water is the most important contributor to high levels of soil boron, boron is often found in high concentrations in association with saline soil and saline well water. Although of considerable agronomic importance, our understanding of Boron toxicity is rather fragment and limited. In this study, Boron content of Great Menderes River and Basin was researched. Great Menderes Basin is one of the consequence basins having agricultural potential, aspect of water and soil resources in Turkey. Great Menderes River, water resource of the basin was to be polluted by geothermal wastewater and thermal springs including Boron element. Great Menderes Basin has abundant geothermal water resources which contain high amounts of Boron and these ground water are brought to surface and used for various purposes such as power generation, heating or thermal spring and than discharged to Great Menderes River. In order to prevent Boron pollution and hence unproductively in soils, it is necessary not to discharged water with Boron to irrigation water. According to results, it was obtained that Boron content of River was as high in particular Upper Basin where there was a ground thermal water reservoir. Boron has been accumulated more than plant requirement in this area irrigated by this water. Boron content of River was relatively low in rainy months and irrigation season while it was high in dry season. Boron concentration in the River was to decrease from upstream to downstream. If it is no taken measure presently, about 130,000 ha irrigation areas which was constructed irrigation scheme in the Great Menderes basin will expose the Boron pollution and salinity. Even though Boron concentration of river water is under 0.5 ppm limit value, Boron element will store in basin soils, decrease in crop yields, and occur problematic soils in basin.

Gallium phosphide energy converters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sims, P.E.; Dinetta, L.C.; Goetz, M.A.

1995-10-01

Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp {minus}17) A/sq cm have been measured andmore » the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.« less

Gallium phosphide energy converters

NASA Astrophysics Data System (ADS)

Sims, P. E.; Dinetta, L. C.; Goetz, M. A.

1995-10-01

Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

Precipitation behavior in austenitic and ferritic steels during fast neutron irradiation and thermal aging*1

NASA Astrophysics Data System (ADS)

Kawanishi, H.; Hajima, R.; Sekimura, N.; Arai, Y.; Ishino, S.

1988-07-01

Precipitation behavior has been studied using a carbon extraction replica technique in Ti-modified Type 316 stainless steels (JPCA-2) and 9Cr-2Mo ferritic/martensitic steels (JFMS) irradiated to 8.1 × 10 24 n/m 2 at 873 and 673 K, respectively, in the experimental fast breeder reactor JOYO. Precipitate identification and compositional analysis were carried out on extracted replicas. The results were compared to those from the as-received steel and a control which had been given the same thermal as-treatment as the specimens received during irradiations. Carbides, Ti-sulphides and phosphides were precipitated in JPCA-2. Precipitate observed in JFMS included carbides, Laves-phases and phosphides. The precipitates in both steels were concluded to be stable under irradiation except for MC and M 6C in JPCA-2. Small MC particles were found precipitated in JPCA-2 during both irradiation and aging. Irradiation proved to promote the precipitation of M 6C in JPCA-2.

Scaling Relations for Adsorption Energies on Doped Molybdenum Phosphide Surfaces

DOE PAGES

Fields, Meredith; Tsai, Charlie; Chen, Leanne D.; ...

2017-03-10

Molybdenum phosphide (MoP), a well-documented catalyst for applications ranging from hydrotreating reactions to electrochemical hydrogen evolution, has yet to be mapped from a more fundamental perspective, particularly in the context of transition-metal scaling relations. In this work, we use periodic density functional theory to extend linear scaling arguments to doped MoP surfaces and understand the behavior of the phosphorus active site. The derived linear relationships for hydrogenated C, N, and O species on a variety of doped surfaces suggest that phosphorus experiences a shift in preferred bond order depending on the degree of hydrogen substitution on the adsorbate molecule. Thismore » shift in phosphorus hybridization, dependent on the bond order of the adsorbate to the surface, can result in selective bond weakening or strengthening of chemically similar species. As a result, we discuss how this behavior deviates from transition-metal, sulfide, carbide, and nitride scaling relations, and we discuss potential applications in the context of electrochemical reduction reactions.« less

Gallium phosphide energy converters

NASA Technical Reports Server (NTRS)

Sims, P. E.; Dinetta, L. C.; Goetz, M. A.

1995-01-01

Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

A review of aluminium phosphide poisoning and a flowchart to treat it.

PubMed

Hashemi-Domeneh, Behrooz; Zamani, Nasim; Hassanian-Moghaddam, Hossein; Rahimi, Mitra; Shadnia, Shahin; Erfantalab, Peyman; Ostadi, Ali

2016-09-01

The use of pesticides such as aluminium phosphide (AlP) has increased in the recent years and improved the quantity and quality of agricultural products in a number of developing countries. The downside is that AlP causes severe chronic and acute health effects that have reached major proportions in countries such as India, Iran, Bangladesh, and Jordan. Nearly 300,000 people die due to pesticide poisoning in the world every year. Poisoning with AlP accounts for many of these deaths. Unfortunately, at the same time, there is no standard treatment for it. The aim of this article is to give a brief review of AlP poisoning and propose a treatment flowchart based on the knowledge gained so far. For this purpose we reviewed all articles on the management of AlP poisoning published from 2000 till now. Using a modified Delphi design, we have designed a handy flowchart that could be used as a guide for AlP poisoning management of patients in emergency centres.

CoP/WS2 nanoflake heterostructures as efficient electrocatalysts for significant improvement in hydrogen evolution activity

NASA Astrophysics Data System (ADS)

Chen, Yajie; Kang, Chuanhong; Wang, Ruihong; Ren, Zhiyu; Fu, Huiying; Xiao, Yuting; Tian, Guohui

2018-06-01

The CoP/WS2 nanoflake composites were synthesized via the sulfuration and subsequent phosphidation using the pre-prepared WO2.72 nanowires as precursors. Originally, WO2.72 nanowires were prepared and followed by sulfuration to obtain WS2 nanoflakes. The as-prepared WS2 nanoflakes were used as substrates, on which the Co3O4 nanoparticles were uniformly anchored to construct the Co3O4/WS2 nanoflakes. Finally, the Co3O4/WS2 composites were subjected to phosphidation and in-situ converted into CoP/WS2 nanoflakes. Because of the dual functionalities of both CoP and WS2, the abundant interfaces as well as their synergy, the CoP/WS2 nanoflakes exhibited much higher electrocatalytic activity, smaller overpotential (-81 mV), lower Tafel slope (62 mV decade-1), and higher stability toward hydrogen-evolution reaction than those for the single CoP and WS2.

Field trials of the rodenticide gophacide against wild house mice (Mus musculus L.).

PubMed Central

Rowe, F. P.; Swinney, T.; Bradfield, A.

1975-01-01

The acute rodenticide gophacide was tested against urban infestations of the house mouse (Mus musculus L.) and treatment success was assessed from the results of census baitings conducted before and after each treatment. Seven of eight populations of mice living in premises where alternative food supplies were limited were successfully controlled when medium oatmeal bait containing gophacide at 0.1% was laid directly for 4 days. In further treatments against mice inhabiting more complex environments and having greater access to other foods, the performance of gophacide at 0.1% and at 0.25% in a wholemeal flour/pinhead oatmeal/corn oil bait was compared with that of zinc phosphide at 3.0% in the same bait-base. The poison treatments were conducted for 1 or 4 days and always after 3 days pre-baiting. Treatment success varied considerably irrespective of the type of treatment or of the poison used. In general, however, gophacide proved to be as effective as zinc phosphide for the control of mice. PMID:1054056

Ellipsometric analysis and optical absorption characterization of gallium phosphide nanoparticulate thin film

NASA Astrophysics Data System (ADS)

Zhang, Qi-Xian; Wei, Wen-Sheng; Ruan, Fang-Ping

2011-04-01

Gallium phosphide (GaP) nanoparticulate thin films were easily fabricated by colloidal suspension deposition via GaP nanoparticles dispersed in N,N-dimethylformamide. The microstructure of the film was performed by x-ray diffraction, high resolution transmission electron microscopy and field emission scanning electron microscopy. The film was further investigated by spectroscopic ellipsometry. After the model GaP+void|SiO2 was built and an effective medium approximation was adopted, the values of the refractive index n and the extinction coefficient k were calculated for the energy range of 0.75 eV-4.0 eV using the dispersion formula in DeltaPsi2 software. The absorption coefficient of the film was calculated from its k and its energy gaps were further estimated according to the Tauc equation, which were further verified by its fluorescence spectrum measurement. The structure and optical absorption properties of the nanoparticulate films are promising for their potential applications in hybrid solar cells.

Boron exposure through drinking water during pregnancy and birth size.

PubMed

Igra, Annachiara Malin; Harari, Florencia; Lu, Ying; Casimiro, Esperanza; Vahter, Marie

2016-10-01

Boron is a metalloid found at highly varying concentrations in soil and water. Experimental data indicate that boron is a developmental toxicant, but the few human toxicity data available concern mostly male reproduction. To evaluate potential effects of boron exposure through drinking water on pregnancy outcomes. In a mother-child cohort in northern Argentina (n=194), 1-3 samples of serum, whole blood and urine were collected per woman during pregnancy and analyzed for boron and other elements to which exposure occurred, using inductively coupled plasma mass spectrometry. Infant weight, length and head circumference were measured at birth. Drinking water boron ranged 377-10,929μg/L. The serum boron concentrations during pregnancy ranged 0.73-605μg/L (median 133μg/L) and correlated strongly with whole-blood and urinary boron, and, to a lesser extent, with water boron. In multivariable-adjusted linear spline regression analysis (non-linear association), we found that serum boron concentrations above 80μg/L were inversely associated with birth length (B-0.69cm, 95% CI -1.4; -0.024, p=0.043, per 100μg/L increase in serum boron). The impact of boron appeared stronger when we restricted the exposure to the third trimester, when the serum boron concentrations were the highest (0.73-447μg/L). An increase in serum boron of 100μg/L in the third trimester corresponded to 0.9cm shorter and 120g lighter newborns (p=0.001 and 0.021, respectively). Considering that elevated boron concentrations in drinking water are common in many areas of the world, although more screening is warranted, our novel findings warrant additional research on early-life exposure in other populations. Copyright © 2016 The Authors. Published by Elsevier Ltd.. All rights reserved.

Mathematical modeling and experimental validation of the spatial distribution of boron in the root of Arabidopsis thaliana identify high boron accumulation in the tip and predict a distinct root tip uptake function.

PubMed

Shimotohno, Akie; Sotta, Naoyuki; Sato, Takafumi; De Ruvo, Micol; Marée, Athanasius F M; Grieneisen, Verônica A; Fujiwara, Toru

2015-04-01

Boron, an essential micronutrient, is transported in roots of Arabidopsis thaliana mainly by two different types of transporters, BORs and NIPs (nodulin26-like intrinsic proteins). Both are plasma membrane localized, but have distinct transport properties and patterns of cell type-specific accumulation with different polar localizations, which are likely to affect boron distribution. Here, we used mathematical modeling and an experimental determination to address boron distributions in the root. A computational model of the root is created at the cellular level, describing the boron transporters as observed experimentally. Boron is allowed to diffuse into roots, in cells and cell walls, and to be transported over plasma membranes, reflecting the properties of the different transporters. The model predicts that a region around the quiescent center has a higher concentration of soluble boron than other portions. To evaluate this prediction experimentally, we determined the boron distribution in roots using laser ablation-inductivity coupled plasma-mass spectrometry. The analysis indicated that the boron concentration is highest near the tip and is lower in the more proximal region of the meristem zone, similar to the pattern of soluble boron distribution predicted by the model. Our model also predicts that upward boron flux does not continuously increase from the root tip toward the mature region, indicating that boron taken up in the root tip is not efficiently transported to shoots. This suggests that root tip-absorbed boron is probably used for local root growth, and that instead it is the more mature root regions which have a greater role in transporting boron toward the shoots. © The Author 2015. Published by Oxford University Press on behalf of Japanese Society of Plant Physiologists.

Mathematical Modeling and Experimental Validation of the Spatial Distribution of Boron in the Root of Arabidopsis thaliana Identify High Boron Accumulation in the Tip and Predict a Distinct Root Tip Uptake Function

PubMed Central

Shimotohno, Akie; Sotta, Naoyuki; Sato, Takafumi; De Ruvo, Micol; Marée, Athanasius F.M.; Grieneisen, Verônica A.; Fujiwara, Toru

2015-01-01

Boron, an essential micronutrient, is transported in roots of Arabidopsis thaliana mainly by two different types of transporters, BORs and NIPs (nodulin26-like intrinsic proteins). Both are plasma membrane localized, but have distinct transport properties and patterns of cell type-specific accumulation with different polar localizations, which are likely to affect boron distribution. Here, we used mathematical modeling and an experimental determination to address boron distributions in the root. A computational model of the root is created at the cellular level, describing the boron transporters as observed experimentally. Boron is allowed to diffuse into roots, in cells and cell walls, and to be transported over plasma membranes, reflecting the properties of the different transporters. The model predicts that a region around the quiescent center has a higher concentration of soluble boron than other portions. To evaluate this prediction experimentally, we determined the boron distribution in roots using laser ablation-inductivity coupled plasma-mass spectrometry. The analysis indicated that the boron concentration is highest near the tip and is lower in the more proximal region of the meristem zone, similar to the pattern of soluble boron distribution predicted by the model. Our model also predicts that upward boron flux does not continuously increase from the root tip toward the mature region, indicating that boron taken up in the root tip is not efficiently transported to shoots. This suggests that root tip-absorbed boron is probably used for local root growth, and that instead it is the more mature root regions which have a greater role in transporting boron toward the shoots. PMID:25670713

Fabrication of boron sputter targets

DOEpatents

Makowiecki, Daniel M.; McKernan, Mark A.

1995-01-01

A process for fabricating high density boron sputtering targets with sufficient mechanical strength to function reliably at typical magnetron sputtering power densities and at normal process parameters. The process involves the fabrication of a high density boron monolithe by hot isostatically compacting high purity (99.9%) boron powder, machining the boron monolithe into the final dimensions, and brazing the finished boron piece to a matching boron carbide (B.sub.4 C) piece, by placing aluminum foil there between and applying pressure and heat in a vacuum. An alternative is the application of aluminum metallization to the back of the boron monolithe by vacuum deposition. Also, a titanium based vacuum braze alloy can be used in place of the aluminum foil.

Structure prediction of boron-doped graphene by machine learning

NASA Astrophysics Data System (ADS)

M. Dieb, Thaer; Hou, Zhufeng; Tsuda, Koji

2018-06-01

Heteroatom doping has endowed graphene with manifold aspects of material properties and boosted its applications. The atomic structure determination of doped graphene is vital to understand its material properties. Motivated by the recently synthesized boron-doped graphene with relatively high concentration, here we employ machine learning methods to search the most stable structures of doped boron atoms in graphene, in conjunction with the atomistic simulations. From the determined stable structures, we find that in the free-standing pristine graphene, the doped boron atoms energetically prefer to substitute for the carbon atoms at different sublattice sites and that the para configuration of boron-boron pair is dominant in the cases of high boron concentrations. The boron doping can increase the work function of graphene by 0.7 eV for a boron content higher than 3.1%.

Biological activity of N(4)-boronated derivatives of 2'-deoxycytidine, potential agents for boron-neutron capture therapy.

PubMed

Nizioł, Joanna; Uram, Łukasz; Szuster, Magdalena; Sekuła, Justyna; Ruman, Tomasz

2015-10-01

Boron-neutron capture therapy (BNCT) is a binary anticancer therapy that requires boron compound for nuclear reaction during which high energy alpha particles and lithium nuclei are formed. Unnatural, boron-containing nucleoside with hydrophobic pinacol moiety was investigated as a potential BNCT boron delivery agent. Biological properties of this compound are presented for the first time and prove that boron nucleoside has low cytotoxicity and that observed apoptotic effects suggest alteration of important functions of cancer cells. Mass spectrometry analysis of DNA from cancer cells proved that boron nucleoside is inserted into nucleic acids as a functional nucleotide derivative. NMR studies present very high degree of similarity of natural dG-dC base pair with dG-boron nucleoside system. Copyright © 2015 Elsevier Ltd. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lagunova, I.A.

A characteristic feature of the products of mud-volcano activity in the Kerch-Taman region is their high boron content. Distribution of boron in waters of mud volcanoes is characterized by restriction of anomalously high concentrations of boron to mud volcanoes actively operating at the present time in general, and to the most active period of operation of the individual volcano; there is a direct correlation between boron and the hydrocarbonate ion (r/sub B//HCO/sub 3// = 0.5), and between boron and carbon dioxide from the mud-volcano gases (r/sub B//CO/sub 2// = 0.4). The correlation is lacking between boron and mineralization, and betweenmore » boron and chlorine, the correlation is close to inverse. A spatial connection between areas of development of mud volcanism and belts of boron mineralization has been established. Anomalously high boron concentrations in the products of mud volcanism in the Kerch-Taman region are part of the overall increased boron capacity of the Crimea and the Caucasus, which has been controlled by recent magmatic activity.« less

METHOD OF COATING SURFACES WITH BORON

DOEpatents

Martin, G.R.

1949-10-11

A method of forming a thin coating of boron on metallic, glass, or other surfaces is described. The method comprises heating the article to be coated to a temperature of about 550 d C in an evacuated chamber and passing trimethyl boron, triethyl boron, or tripropyl boron in the vapor phase and under reduced pressure into contact with the heated surface causing boron to be deposited in a thin film.

Boron Dissolved and Particulate Atmospheric Inputs to a Forest Ecosystem (Northeastern France).

PubMed

Roux, Philippe; Turpault, Marie-Pierre; Kirchen, Gil; Redon, Paul-Olivier; Lemarchand, Damien

2017-12-19

Boron concentrations and isotopic compositions of atmospheric dust and dissolved depositions were monitored over a two-year period (2012-2013) in the forest ecosystem of Montiers (Northeastern France). This time series allows the determination of the boron atmospheric inputs to this forest ecosystem and contributes to refine our understanding of the sources and processes that control the boron atmospheric cycle. Mean annual dust and dissolved boron atmospheric depositions are comparable in size (13 g·ha -1 ·yr -1 and 16 g·ha -1 ·yr -1 , respectively), which however show significant intra- and interannual variations. Boron isotopes in dust differ from dissolved inputs, with an annual mean value of +1 ‰ and +18 ‰ for, respectively. The notable high boron contents (190-390 μg·g -1 ) of the dust samples are interpreted as resulting from localized spreading of boron-rich fertilizers, thus indicating a significant local impact of regional agricultural activities. Boron isotopes in dissolved depositions show a clear seasonal trend. The absence of correlation with marine cyclic solutes contradicts a control of atmospheric boron by dissolution of seasalts. Instead, the boron data from this study are consistent with a Rayleigh-like evolution of the atmospheric gaseous boron reservoir with possible but limited anthropogenic and/or biogenic contributions.

Insights into the Mechanisms Underlying Boron Homeostasis in Plants

PubMed Central

Yoshinari, Akira; Takano, Junpei

2017-01-01

Boron is an essential element for plants but is toxic in excess. Therefore, plants must adapt to both limiting and excess boron conditions for normal growth. Boron transport in plants is primarily based on three transport mechanisms across the plasma membrane: passive diffusion of boric acid, facilitated diffusion of boric acid via channels, and export of borate anion via transporters. Under boron -limiting conditions, boric acid channels and borate exporters function in the uptake and translocation of boron to support growth of various plant species. In Arabidopsis thaliana, NIP5;1 and BOR1 are located in the plasma membrane and polarized toward soil and stele, respectively, in various root cells, for efficient transport of boron from the soil to the stele. Importantly, sufficient levels of boron induce downregulation of NIP5;1 and BOR1 through mRNA degradation and proteolysis through endocytosis, respectively. In addition, borate exporters, such as Arabidopsis BOR4 and barley Bot1, function in boron exclusion from tissues and cells under conditions of excess boron. Thus, plants actively regulate intracellular localization and abundance of transport proteins to maintain boron homeostasis. In this review, the physiological roles and regulatory mechanisms of intracellular localization and abundance of boron transport proteins are discussed. PMID:29204148

Boron sorption from aqueous solution by hydrotalcite and its preliminary application in geothermal water deboronation.

PubMed

Guo, Qinghai; Zhang, Yin; Cao, Yaowu; Wang, Yanxin; Yan, Weide

2013-11-01

Hydrotalcite and its calcination product were used to treat pure water spiked with various concentrations of boron and geothermal water containing boron as a major undesirable element. The kinetics process of boron sorption by uncalcined hydrotalcite is controlled by the diffusion of boron from bulk solution to sorbent-solution boundary film and its exchange with interlayer chloride of hydrotalcite, whereas the removal rate of boron by calcined hydrotalcite rests with the restoration process of its layered structure. The results of isotherm sorption experiments reveal that calcined hydrotalcite generally has much stronger ability to lower solution boron concentration than uncalcined hydrotalcite. The combination of adsorption of boron on the residue of MgO-Al2O3 solid solution and intercalation of boron into the reconstructed hydrotalcite structure due to "structural memory effect" is the basic mechanism based on which the greater boron removal by calcined hydrotalcite was achieved. As 15 geothermal water samples were used to test the deboronation ability of calcined hydrotalcite at 65 °C, much lower boron removal efficiencies were observed. The competitive sorption of the other anions in geothermal water, such as HCO3-, SO4(2-), and F-, is the reason why calcined hydrotalcite could not remove boron from geothermal water as effectively as from pure boron solution. However, boron removal percents ranging from 89.3 to 99.0% could be obtained if 50 times of sorbent were added to the geothermal water samples. Calcined hydrotalcite is a good candidate for deboronation of geothermal water.

Development of magnetic resonance technology for noninvasive boron quantification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bradshaw, K.M.

1990-11-01

Boron magnetic resonance imaging (MRI) and spectroscopy (MRS) were developed in support of the noninvasive boron quantification task of the Idaho National Engineering Laboratory (INEL) Power Burst Facility/Boron Neutron Capture Therapy (PBF/BNCT) program. The hardware and software described in this report are modifications specific to a GE Signa{trademark} MRI system, release 3.X and are necessary for boron magnetic resonance operation. The technology developed in this task has been applied to obtaining animal pharmacokinetic data of boron compounds (drug time response) and the in-vivo localization of boron in animal tissue noninvasively. 9 refs., 21 figs.

Special features of the technology of boronizing steel in a calcium chloride melt

NASA Astrophysics Data System (ADS)

Chernov, Ya. B.; Anfinogenov, A. I.; Veselov, I. N.

1999-12-01

A technology for hardening machine parts and tools by boronizing in molten calcium chloride with amorphous-boron powder in electrode salt baths has been developed with the aim of creating a closed cycle of utilizing the raw materials and the washing water. A process of boronizing that includes quenching and tempering of the boronized articles is described. The quenching medium is an ecologically safe and readily available aqueous solution of calcium chloride. The process envisages return of the melt components to the boronizing bath. Boronizing by the suggested method was tested for different classes of steel, namely, structural and tool steels for cold and hot deformation. The wear resistance of the boronized steels was studied.

Fabrication of boron sputter targets

DOEpatents

Makowiecki, D.M.; McKernan, M.A.

1995-02-28

A process is disclosed for fabricating high density boron sputtering targets with sufficient mechanical strength to function reliably at typical magnetron sputtering power densities and at normal process parameters. The process involves the fabrication of a high density boron monolithe by hot isostatically compacting high purity (99.9%) boron powder, machining the boron monolithe into the final dimensions, and brazing the finished boron piece to a matching boron carbide (B{sub 4}C) piece, by placing aluminum foil there between and applying pressure and heat in a vacuum. An alternative is the application of aluminum metallization to the back of the boron monolithe by vacuum deposition. Also, a titanium based vacuum braze alloy can be used in place of the aluminum foil. 7 figs.

Process of Making Boron-Fiber Reinforced Composite Tape

NASA Technical Reports Server (NTRS)

Belvin, Harry L. (Inventor); Cano, Roberto J. (Inventor); Johnston, Norman J. (Inventor); Marchello, Joseph M. (Inventor)

2002-01-01

The invention is an apparatus and method for producing a hybrid boron reinforced polymer matrix composition from powder pre-impregnated fiber tow bundles and a linear array of boron fibers. The boron fibers are applied onto the powder pre-impregnated fiber tow bundles and then are processed within a processing component having an impregnation bar assembly. After passing through variable-dimension forming nip-rollers, the powder pre-impregnated fiber tow bundles with the boron fibers become a hybrid boron reinforced polymer matrix composite tape. A driving mechanism pulls the powder pre-impregnated fiber tow bundles with boron fibers through the processing line of the apparatus and a take-up spool collects the formed hybrid boron-fiber reinforced polymer matrix composite tape.

Experimental Study on Application of Boron Mud Secondary Resource to Oxidized Pellets Production

NASA Astrophysics Data System (ADS)

Fu, Xiao-Jiao; Chu, Man-Sheng; Zhao, Jia-Qi; Chen, Shuang-Yin; Liu, Zheng-Gen; Wang, Si-Yuan

2017-07-01

In order to realize comprehensive and massive treatment of boron mud secondary resource, fundamental study on boron mud applied to oxidized pellets production as additive was carried out in the paper under laboratory conditions. The effects of boron mud on the performance of oxidized pellets were investigated systemically, and boron mud was combined with other boron-rich material innovatively. The results showed that, within certain limits, boron mud can improve properties of oxidized pellets. The bentonite content decreased to 0.3 % when adding 1.0 % boron mud additive and the pellets met blast furnace requirements. With the combination additive content 0.8 %, bentonite content can be further decreased to 0.2 %, and the pellets properties were better than base pellet. Therefore, it was an effective way to reduce environmental pollution and optimize blast furnace operation by developing boron mud secondary resource as pellets additive.

Boron removal in radioactive liquid waste by forward osmosis membrane

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doo Seong Hwang; Hei Min Choi; Kune Woo Lee

2013-07-01

This study investigated the treatment of boric acid contained in liquid radioactive waste using a forward osmosis membrane. The boron permeation through the membrane depends on the type of membrane, membrane orientation, pH of the feed solution, salt and boron concentration in the feed solution, and osmotic pressure of the draw solution. The boron flux begins to decline from pH 7 and increases with an increase of the osmotic driving force. The boron flux decreases slightly with the salt concentration, but is not heavily influenced by a low salt concentration. The boron flux increases linearly with the concentration of boron.more » No element except for boron was permeated through the FO membrane in the multi-component system. The maximum boron flux is obtained in an active layer facing a draw solution orientation of the CTA-ES membrane under conditions of less than pH 7 and high osmotic pressure. (authors)« less

49 CFR 173.52 - Classification codes and compatibility groups of explosives.

Code of Federal Regulations, 2011 CFR

2011-10-01

... one containing white phosphorus, phosphide or flammable liquid or gel or hypergolic liquid) G 1.1G1.2G 1.3G 1.4G Article containing both an explosive substance and white phosphorus H 1.2H1.3H Article...

49 CFR 173.52 - Classification codes and compatibility groups of explosives.

Code of Federal Regulations, 2010 CFR

2010-10-01

... one containing white phosphorus, phosphide or flammable liquid or gel or hypergolic liquid) G 1.1G1.2G 1.3G 1.4G Article containing both an explosive substance and white phosphorus H 1.2H1.3H Article...

Changing trends and predictors of outcome in patients with acute poisoning admitted to the intensive care.

PubMed

Jayashree, M; Singhi, S

2011-10-01

Acute poisoning in children is a medical emergency and preventable cause of morbidity and mortality. Knowledge about the nature, magnitude, outcome and predictors of outcome is necessary for management and allocation of scant resources. This is a retrospective study conducted in the Pediatric Intensive Care Unit (PICU) of an urban multi speciality teaching and referral hospital in North India from January 1993 to June 2008 to determine the epidemiology, clinical profile, outcome and predictors of outcome in children with acute poisoning. Data of 225 children with acute poisoning was retrieved from case records with respect to demographic profile, time to presentation, PRISM score, clinical features, investigations, therapeutic measures, complications and outcome in terms of survival or death. Survivors and non-survivors were compared to determine the predictors of mortality. Acute poisoning constituted 3.9% of total PICU admissions; almost all (96.9%) were accidental. The mean age of study patient's was 3.3 ± 3.1 (range 0.10-12) years with majority (61.3%) being toddlers (1-3 years). In the overall cohort, kerosene (27.1%) and prescription drugs (26.7%) were the most common causative agents followed by organophosphates (16.0%), corrosives (7.6%), carbamates (4.9%) and aluminum phosphide (4.9%). However the trends of the three 5-year interval (1993 till the end of 1997, 1998 till the end of 2002 and 2003 till the end of June 2008) revealed a significant decrease in kerosene, aluminum phosphide and iron with increase in organophosphate compound poisoning. Ninety nine (44%) patients required supplemental oxygen, of which nearly half (n = 42; 42.4%) needed mechanical ventilation. Twenty (8.9%) died; cause of death being iron poisoning in five; aluminum phosphide in four; organophosphates in three and one each because of kerosene, diesel, carbamate, corrosive, sewing machine lubricant, isoniazid, salicylate and maduramycin poisoning. There has been a significant decrease in the mortality over the years. The non-survivors were older, had a higher PRISM score and hypotension at admission and higher need for oxygen and ventilation. On multiple logistic regression analysis hypotension at admission was the most significant predictor of death (adjusted odds ratio: 5.59; 95% confidence interval: 1.38-22.63; p = 0.016). Acute poisoning in children over the past 15 years has shown a changing trend with significant decrease in kerosene, iron and aluminum phosphide and an increase in organophosphate and prescription drugs. The overall mortality has decreased significantly. Hypotension at admission was the most significant predictor of death.

Chemistry of the oxophosphinidene ligand. 2. Reactivity of the anionic complexes [MCp{P(O)R*}(CO)(2)](-) (M = Mo, W; R* = 2,4,6-C(6)H(2)(t)Bu(3)) toward electrophiles based on elements different from carbon.

PubMed

Alonso, María; Alvarez, M Angeles; García, M Esther; Ruiz, Miguel A; Hamidov, Hayrullo; Jeffery, John C

2010-12-20

The anionic oxophosphinidene complexes (H-DBU)[MCp{P(O)R*}(CO)(2)] (M = Mo, W; R* = 2,4,6-C(6)H(2)(t)Bu(3); Cp = η(5)-C(5)H(5), DBU = 1,8-diazabicyclo [5.4.0] undec-7-ene) displayed multisite reactivity when faced with different electrophilic reagents. The reactions with the group 14 organochloride compounds ER(4-x)Cl(x) (E = Si, Ge, Sn, Pb) led to either phosphide-like, oxophosphinidene-bridged derivatives [MCp{P(OE')R*}(CO)(2)] (E' = SiMe(3), SiPh(3), GePh(3), GeMe(2)Cl) or to terminal oxophosphinidene complexes [MCp{P(O)R*}(CO)(2)(E')] (E' = SnPh(3), SnPh(2)Cl, PbPh(3); Mo-Pb = 2.8845(4) Å for the MoPb compound). A particular situation was found in the reaction with SnMe(3)Cl, this giving a product existing in both tautomeric forms, with the phosphide-like complex [MCp{P(OSnMe(3))R*}(CO)(2)] prevailing at room temperature and the tautomer [MCp{P(O)R*}(CO)(2)(SnMe(3))] being the unique species present below 203 K in dichloromethane solution. The title anions also showed a multisite behavior when reacting with transition-metal based electrophiles. Thus, the reactions with the complexes [M'Cp(2)Cl(2)] (M' = Ti, Zr) gave phosphide-like derivatives [MCp{P(OM')R*}(CO)(2)] (M = Mo, M' = TiCp(2)Cl, ZrCp(2)Cl; M = W, M' = ZrCp(2)Cl), displaying a bridging κ(1),κ(1)-P,O- oxophosphinidene ligand connecting MCp(CO)(2) and M'Cp(2)Cl metal fragments (W-P = 2.233(1) Å, O-Zr = 2.016(4) Å for the WZr compound]. In contrast, the reactions with the complex [AuCl{P(p-tol)(3)}] gave the metal-metal bonded derivatives trans-[MCp{P(O)R*}(CO)(2){AuP(p-tol)(3)}] (M = Mo, W; Mo-Au = 2.7071(7) Å). From all the above results it was concluded that the terminal oxophosphinidene complexes are preferentially formed under conditions of orbital control, while charge-controlled reactions tend to give derivatives with the electrophilic fragment bound to the oxygen atom of the oxophosphinidene ligand (phosphide-like, oxophosphinidene-bridged derivatives).

Ferromagnetism and semiconducting of boron nanowires

PubMed Central

2012-01-01

More recently, motivated by extensively technical applications of carbon nanostructures, there is a growing interest in exploring novel non-carbon nanostructures. As the nearest neighbor of carbon in the periodic table, boron has exceptional properties of low volatility and high melting point and is stronger than steel, harder than corundum, and lighter than aluminum. Boron nanostructures thus are expected to have broad applications in various circumstances. In this contribution, we have performed a systematical study of the stability and electronic and magnetic properties of boron nanowires using the spin-polarized density functional calculations. Our calculations have revealed that there are six stable configurations of boron nanowires obtained by growing along different base vectors from the unit cell of the bulk α-rhombohedral boron (α-B) and β-rhombohedral boron (β-B). Well known, the boron bulk is usually metallic without magnetism. However, theoretical results about the magnetic and electronic properties showed that, whether for the α-B-based or the β-B-based nanowires, their magnetism is dependent on the growing direction. When the boron nanowires grow along the base vector [001], they exhibit ferromagnetism and have the magnetic moments of 1.98 and 2.62 μB, respectively, for the α-c [001] and β-c [001] directions. Electronically, when the boron nanowire grows along the α-c [001] direction, it shows semiconducting and has the direct bandgap of 0.19 eV. These results showed that boron nanowires possess the unique direction dependence of the magnetic and semiconducting behaviors, which are distinctly different from that of the bulk boron. Therefore, these theoretical findings would bring boron nanowires to have many promising applications that are novel for the boron bulk. PMID:23244063

Boron and silicon: Effects on growth, plasma lipids, urinary cyclic AMP and bone and brain mineral composition of male rats

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seaborn, C.D.; Nielsen, F.H.

1994-06-01

Because boron resembles silicon in its chemical properties, an experiment was performed to determine if excessive dietary boron would affect the response to silicon deprivation and, conversely, if silicon would influence the effects of an excessive intake of boron. Male weanling Sprague-Dawley rats were assigned to groups of 6 or 12 in a two-by-two factorially arranged experiment. Supplemented to a ground corn/casein diet containing 1.2 [mu]g silicon and 3 [mu]g boron per gram were silicon as sodium metasilicate at 0 or 50 [mu]g/g and boron as orthoboric acid at 0 or 500 [mu]g/g diet. At nine weeks, animals fed highmore » dietary boron had significantly decreased final body weights, liver-weight-to-body-weight ratios, urinary cAMP concentrations, plasma triglyceride, cholesterol, glycine, valine, leucine, and lysine concentrations and skull copper, sodium, and manganese concentrations. High dietary boron also significantly increased brain-weight-to-body-weight ratios, magnesium concentrations of femur, brain, and plasma, zinc concentration of femur, and iron concentration of skull. The bone mineral findings suggest that excess dietary boron exerts subtle effects on bone composition. Dietary silicon affected blood urea nitrogen, hematocrit, hemoglobin, and the concentrations of plasma threonine and aspartic acid in animals fed excess boron. Depression of the testes-weight-to-body-weight ratio of animals fed 500 [mu]g boron per gram diet was most marked in animals not fed silicon. Although excessive dietary boron did not markedly enhanced the response of rats to silicon deprivation, dietary silicon affected their response to high dietary boron. Thus, dietary silicon apparently can influence boron toxicity.« less

Magnetorheological finishing of chemical-vapor deposited zinc sulfide via chemically and mechanically modified fluids

DOE PAGES

Salzman, Sivan; Romanofsky, Henry J.; Giannechini, Lucca J.; ...

2016-02-19

In this study, we describe the anisotropy in the material removal rate (MRR) of the polycrystalline, chemical-vapor deposited zinc sulfide (ZnS).We define the polycrystalline anisotropy via microhardness and chemical erosion tests for four crystallographic orientations of ZnS: (100), (110), (111), and (311). Anisotropy in the MRR was studied under magnetorheological finishing (MRF) conditions. Three chemically and mechanically modified magnetorheological (MR) fluids at pH values of 4, 5, and 6 were used to test the MRR variations among the four single-crystal planes. When polishing the single-crystal planes and the polycrystalline with pH 5 and pH 6MR fluids, variations were found inmore » the MRR among the four single-crystal planes and surface artifacts were observed on the polycrystalline material. When polishing the single-crystal planes and the polycrystalline with the modified MR fluid at pH 4, however, minimal variation was observed in the MRR among the four orientations and a reduction in surface artifacts was achieved on the polycrystalline material.« less

Boron Nitride Nanotubes

NASA Technical Reports Server (NTRS)

Jordan, Kevin (Inventor); Smith, Michael W. (Inventor); Park, Cheol (Inventor)

2012-01-01

Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

Boron nitride nanotubes

DOEpatents

Smith, Michael W [Newport News, VA; Jordan, Kevin [Newport News, VA; Park, Cheol [Yorktown, VA

2012-06-06

Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

Plasma boron and the effects of boron supplementation in males.

PubMed Central

Green, N R; Ferrando, A A

1994-01-01

Recently, a proliferation of athletic supplements has been marketed touting boron as an ergogenic aid capable of increasing testosterone. The effect of boron supplementation was investigated in male bodybuilders. Ten male bodybuilders (aged 20 to 26) were given a 2.5-mg boron supplement, while nine male bodybuilders (aged 21 to 27) were given a placebo for 7 weeks. Plasma total and free testosterone, plasma boron, lean body mass, and strength measurements were determined on day 1 and day 49 of the study. A microwave digestion procedure followed by inductively coupled argon plasma spectroscopy was used for boron determination. Twelve subjects had boron values at or above the detection limit with median value of 25 ng/ml (16 ng/ml lower quartile and 33 ng/ml upper quartile). Of the ten subjects receiving boron supplements, six had an increase in their plasma boron. Analysis of variance indicated no significant effect of boron supplementation on any of the other dependent variables. Both groups demonstrated significant increases in total testosterone (p < 0.01), lean body mass (p < 0.01), and one repetition maximum (RM) squat (p < 0.001) and one RM bench press (p < 0.01). The findings suggest that 7 weeks of bodybuilding can increase total testosterone, lean body mass, and strength in lesser-trained bodybuilders, but boron supplementation affects these variables not at all. PMID:7889885

Microwave sintering of boron carbide

DOEpatents

Blake, R.D.; Katz, J.D.; Petrovic, J.J.; Sheinberg, H.

1988-06-10

A method for forming boron carbide into a particular shape and densifying the green boron carbide shape. Boron carbide in powder form is pressed into a green shape and then sintered, using a microwave oven, to obtain a dense boron carbide body. Densities of greater than 95% of theoretical density have been obtained. 1 tab.

Hydrogen adsorption capacities of multi-walled boron nitride nanotubes and nanotube arrays: a grand canonical Monte Carlo study.

PubMed

Ahadi, Zohreh; Shadman, Muhammad; Yeganegi, Saeed; Asgari, Farid

2012-07-01

Hydrogen adsorption in multi-walled boron nitride nanotubes and their arrays was studied using grand canonical Monte Carlo simulation. The results show that hydrogen storage increases with tube diameter and the distance between the tubes in multi-walled boron nitride nanotube arrays. Also, triple-walled boron nitride nanotubes present the lowest level of hydrogen physisorption, double-walled boron nitride nanotubes adsorb hydrogen better when the diameter of the inner tube diameter is sufficiently large, and single-walled boron nitride nanotubes adsorb hydrogen well when the tube diameter is small enough. Boron nitride nanotube arrays adsorb hydrogen, but the percentage of adsorbed hydrogen (by weight) in boron nitride nanotube arrays is rather similar to that found in multi-walled boron nitride nanotubes. Also, when the Langmuir and Langmuir-Freundlich equations were fitted to the simulated data, it was found that multi-layer adsorptivity occurs more prominently as the number of walls and the tube diameter increase. However, in single-walled boron nitride nanotubes with a small diameter, the dominant mechanism is monolayer adsorptivity.

Removal of boron (B) from waste liquors.

PubMed

Jiang, J Q; Xu, Y; Simon, J; Quill, K; Shettle, K

2006-01-01

This paper explores the use of electrocoagulation to remove boron from waste effluent in comparison with alum coagulation. In treating model test wastes, greater boron removals were achieved with electrocoagulation at low doses than conventional alum coagulation when reaction was undertaken for the same conditions (pH 8.5, and initial boron concentration was 500 mg/L). Al electrocoagulation can achieve good boron removal performance (68.3%) at a dose of 2.1 (as molar ratio of Al:B, and for current density of 62.1 A/m2), while alum coagulation can only achieve the maximum boron removal of 56% at a dose of 2.4. Also, Al electrocoagulation can remove 15-20% more boron than alum coagulation for the same dose compared in the treatment of both model test wastes and industry effluent. The estimation of running costs shows that to achieve 75% boron removal from industry waste effluent, i.e. removing 150 g of boron from 1 m3 of effluent, electrocoagulation was 6.2 times cheaper than alum coagulation. The economic advantage of electrocoagulation in the treatment of boron-containing waste effluent is thus significant.

Boron Stress Activates the General Amino Acid Control Mechanism and Inhibits Protein Synthesis

PubMed Central

Uluisik, Irem; Kaya, Alaattin; Fomenko, Dmitri E.; Karakaya, Huseyin C.; Carlson, Bradley A.; Gladyshev, Vadim N.; Koc, Ahmet

2011-01-01

Boron is an essential micronutrient for plants, and it is beneficial for animals. However, at high concentrations boron is toxic to cells although the mechanism of this toxicity is not known. Atr1 has recently been identified as a boron efflux pump whose expression is upregulated in response to boron treatment. Here, we found that the expression of ATR1 is associated with expression of genes involved in amino acid biosynthesis. These mechanisms are strictly controlled by the transcription factor Gcn4 in response to boron treatment. Further analyses have shown that boron impaired protein synthesis by promoting phosphorylation of eIF2α in a Gcn2 kinase dependent manner. The uncharged tRNA binding domain (HisRS) of Gcn2 is necessary for the phosphorylation of eIF2α in the presence of boron. We postulate that boron exerts its toxic effect through activation of the general amino acid control system and inhibition of protein synthesis. Since the general amino acid control pathway is conserved among eukaryotes, this mechanism of boron toxicity may be of general importance. PMID:22114689

Boron-based nanostructures: Synthesis, functionalization, and characterization

NASA Astrophysics Data System (ADS)

Bedasso, Eyrusalam Kifyalew

Boron-based nanostructures have not been explored in detail; however, these structures have the potential to revolutionize many fields including electronics and biomedicine. The research discussed in this dissertation focuses on synthesis, functionalization, and characterization of boron-based zero-dimensional nanostructures (core/shell and nanoparticles) and one-dimensional nanostructures (nanorods). The first project investigates the synthesis and functionalization of boron-based core/shell nanoparticles. Two boron-containing core/shell nanoparticles, namely boron/iron oxide and boron/silica, were synthesized. Initially, boron nanoparticles with a diameter between 10-100 nm were prepared by decomposition of nido-decaborane (B10H14) followed by formation of a core/shell structure. The core/shell structures were prepared using the appropriate precursor, iron source and silica source, for the shell in the presence of boron nanoparticles. The formation of core/shell nanostructures was confirmed using high resolution TEM. Then, the core/shell nanoparticles underwent a surface modification. Boron/iron oxide core/shell nanoparticles were functionalized with oleic acid, citric acid, amine-terminated polyethylene glycol, folic acid, and dopamine, and boron/silica core/shell nanoparticles were modified with 3-(amino propyl) triethoxy silane, 3-(2-aminoethyleamino)propyltrimethoxysilane), citric acid, folic acid, amine-terminated polyethylene glycol, and O-(2-Carboxyethyl)polyethylene glycol. A UV-Vis and ATR-FTIR analysis established the success of surface modification. The cytotoxicity of water-soluble core/shell nanoparticles was studied in triple negative breast cancer cell line MDA-MB-231 and the result showed the compounds are not toxic. The second project highlights optimization of reaction conditions for the synthesis of boron nanorods. This synthesis, done via reduction of boron oxide with molten lithium, was studied to produce boron nanorods without any contamination and with a uniform size distribution. Various reaction parameters such as temperature, reaction time, and sonication were altered to find the optimal reaction conditions. Once these conditions were determined, boron nanorods were produced then functionalized with amine-terminated polyethylene glycol.

Synthesis and Comparison of Two cBN Composites with Starting Ternary Carbide Binders

NASA Astrophysics Data System (ADS)

Yue, Zhenming; Yang, Limin; Gong, Jianhong; Gao, Jun

2018-04-01

Ti3SiC2 and Ti3AlC2 are two promising binders for the ultrahard composite polycrystalline cubic boron nitride (PcBN). In this study, the cBN composites with Ti3SiC2 and Ti3AlC2 binders with different binder contents were synthesized under the same high pressure ( 5.5 GPa) and high temperature (1350 °C) conditions. Their mechanical properties were measured separately, including Vickers hardness, bending hardening, and compression hardening. Together with XRD results, the phase compounds were also investigated. The decomposition and reaction processes were affected by binder content. Some new compounds formed during sintering, these compounds were TiC, TiSi2, SiC, TiB2, SiB4, TiB2, and TiC0.7N0.3 in Ti3SiC2-cBN composites, as well as TiC0.7N0.3, TiB2, and AlN in Ti3AlC2-cBN composites. The microstructure of the cracks surface was obtained after the bending tests, and was used to further investigate and compare their crack mode by SEM. The crack surface profile and elementary analysis on the oxidative surface were also discussed.

Ceramic impregnated superabrasives

DOEpatents

Radtke, Robert P.; Sherman, Andrew

2009-02-10

A superabrasive fracture resistant compact is formed by depositing successive layers of ceramic throughout the network of open pores in a thermally stable self-bonded polycrystalline diamond or cubic boron nitride preform. The void volume in the preform is from approximately 2 to 10 percent of the volume of the preform, and the average pore size is below approximately 3000 nanometers. The preform is evacuated and infiltrated under at least about 1500 pounds per square inch pressure with a liquid pre-ceramic polymerizable precursor. The precursor is infiltrated into the preform at or below the boiling point of the precursor. The precursor is polymerized into a solid phase material. The excess is removed from the outside of the preform, and the polymer is pyrolized to form a ceramic. The process is repeated at least once more so as to achieve upwards of 90 percent filling of the original void volume. When the remaining void volume drops below about 1 percent the physical properties of the compact, such as fracture resistance, improve substantially. Multiple infiltration cycles result in the deposition of sufficient ceramic to reduce the void volume to below 0.5 percent. The fracture resistance of the compacts in which the pores are lined with formed in situ ceramic is generally at least one and one-half times that of the starting preforms.

The effect of dose enhancement near metal interfaces on synthetic diamond based X-ray dosimeters

NASA Astrophysics Data System (ADS)

Alamoudi, D.; Lohstroh, A.; Albarakaty, H.

2017-11-01

This study investigates the effects of dose enhancement on the photocurrent performance at metallic interfaces in synthetic diamond detectors based X-ray dosimeters as a function of bias voltages. Monte Carlo (MC) simulations with the BEAMnrc code were carried out to simulate the dose enhancement factor (DEF) and compared against the equivalent photocurrent ratio from experimental investigations. The MC simulation results show that the sensitive region for the absorbed dose distribution covers a few micrometers distances from the interface. Experimentally, two single crystals (SC) and one polycrystalline (PC) synthetic diamond samples were fabricated into detectors with carbon based electrodes by boron and carbon ion implantation. Subsequently; the samples were each mounted inside a tissue equivalent encapsulation to minimize unintended fluence perturbation. Dose enhancement was generated by placing copper, lead or gold near the active volume of the detectors using 50 kVp and 100 kVp X-rays relevant for medical dosimetry. The results show enhancement in the detectors' photocurrent performance when different metals are butted up to the diamond bulk as expected. The variation in the photocurrent measurement depends on the type of diamond samples, their electrodes' fabrication and the applied bias voltages indicating that the dose enhancement near the detector may modify their electronic performance.

Novel borothermal route for the synthesis of lanthanum cerium hexaborides and their field emission properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menaka; Patra, Rajkumar; Ghosh, Santanu

2012-10-15

The present study describes the development of a simple approach to stabilize polycrystalline lanthanum cerium hexaborides without using any flux and at ambient pressure. The nanostructured lanthanum-cerium borides were synthesized using hydroxide precursors. These precursors (La{sub 1-x}Ce{sub x}(OH){sub 3}, x=0.1, 0.2, 0.3 and 0.5) were synthesized via hydrothermal route in the presence of Tergitol (surfactant, nonylphenol ethoxylate) as a capping agent. The precursors on heating with boron at 1300 Degree-Sign C lead to the formation of nanostructures (cubes, rods and pyramids) of lanthanum cerium hexaboride. We have investigated the field emission behaviour of the hexaboride films fabricated by spin coating.more » It was observed that the pyramidal shaped nanostructures of La{sub 0.5}Ce{sub 0.5}B{sub 6} shows excellent field emission characteristics with high field enhancement factor of 4502. - Graphical abstract: Nanostructured lanthanum cerium hexaboride with efficient field emission have fabricated by low temperature hydroxide precursor mediated route. Highlights: Black-Right-Pointing-Pointer New methodology to prepare lanthanum cerium hexaboride at 1300 Degree-Sign C via borothermal route. Black-Right-Pointing-Pointer Nanostructured lanthanum cerium hexaboride film by spin coating process. Black-Right-Pointing-Pointer Nanopyramids based lanthanum cerium hexaboride shows excellent field emission.« less

Synthesis and Comparison of Two cBN Composites with Starting Ternary Carbide Binders

NASA Astrophysics Data System (ADS)

Yue, Zhenming; Yang, Limin; Gong, Jianhong; Gao, Jun

2018-05-01

Ti3SiC2 and Ti3AlC2 are two promising binders for the ultrahard composite polycrystalline cubic boron nitride (PcBN). In this study, the cBN composites with Ti3SiC2 and Ti3AlC2 binders with different binder contents were synthesized under the same high pressure ( 5.5 GPa) and high temperature (1350 °C) conditions. Their mechanical properties were measured separately, including Vickers hardness, bending hardening, and compression hardening. Together with XRD results, the phase compounds were also investigated. The decomposition and reaction processes were affected by binder content. Some new compounds formed during sintering, these compounds were TiC, TiSi2, SiC, TiB2, SiB4, TiB2, and TiC0.7N0.3 in Ti3SiC2-cBN composites, as well as TiC0.7N0.3, TiB2, and AlN in Ti3AlC2-cBN composites. The microstructure of the cracks surface was obtained after the bending tests, and was used to further investigate and compare their crack mode by SEM. The crack surface profile and elementary analysis on the oxidative surface were also discussed.

Method for preparing boron-carbide articles

DOEpatents

Benton, S.T.; Masters, D.R.

1975-10-21

The invention is directed to the preparation of boron carbide articles of various configurations. A stoichiometric mixture of particulate boron and carbon is confined in a suitable mold, heated to a temperature in the range of about 1250 to 1500$sup 0$C for effecting a solid state diffusion reaction between the boron and carbon for forming the boron carbide (B$sub 4$C), and thereafter the resulting boron-carbide particles are hot-pressed at a temperature in the range of about 1800 to 2200$sup 0$C and a pressure in the range of about 1000 to 4000 psi for densifying and sintering the boron carbide into the desired article.

Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Durmazuçar, Hasan H.; Gündüz, Güngör

2000-12-01

Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

Excellent electrical conductivity of the exfoliated and fluorinated hexagonal boron nitride nanosheets.

PubMed

Xue, Yafang; Liu, Qian; He, Guanjie; Xu, Kaibing; Jiang, Lin; Hu, Xianghua; Hu, Junqing

2013-01-24

The insulator characteristic of hexagonal boron nitride limits its applications in microelectronics. In this paper, the fluorinated hexagonal boron nitride nanosheets were prepared by doping fluorine into the boron nitride nanosheets exfoliated from the bulk boron nitride in isopropanol via a facile chemical solution method with fluoboric acid; interestingly, these boron nitride nanosheets demonstrate a typical semiconductor characteristic which were studied on a new scanning tunneling microscope-transmission electron microscope holder. Since this property changes from an insulator to a semiconductor of the boron nitride, these nanosheets will be able to extend their applications in designing and fabricating electronic nanodevices.

Boron nitride - Composition, optical properties, and mechanical behavior

NASA Technical Reports Server (NTRS)

Pouch, John J.; Alterovitz, Samuel A.; Miyoshi, Kazuhisa; Warner, Joseph D.

1987-01-01

A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at. percent. The carbon and oxygen impurities were in the 5 to 8 at. percent range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

Boron nitride: Composition, optical properties and mechanical behavior

NASA Technical Reports Server (NTRS)

Pouch, John J.; Alterovitz, Samuel A.; Miyoshi, Kazuhisa; Warner, Joseph D.

1987-01-01

A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

Dry Process for Manufacturing Hybridized Boron Fiber/Carbon Fiber Thermoplastic Composite Materials from a Solution Coated Precursor

NASA Technical Reports Server (NTRS)

Belvin, Harry L. (Inventor); Cano, Roberto J. (Inventor)

2003-01-01

An apparatus for producing a hybrid boron reinforced polymer matrix composite from precursor tape and a linear array of boron fibers. The boron fibers are applied onto the precursor tapes and the precursor tape processed within a processing component having an impregnation bar assembly. After passing through variable-dimension forming nip-rollers, the precursor tape with the boron fibers becomes a hybrid boron reinforced polymer matrix composite. A driving mechanism is used to pulled the precursor tape through the method and a take-up spool is used to collect the formed hybrid boron reinforced polymer matrix composite.

Synthesis of borophenes: Anisotropic, two-dimensional boron polymorphs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mannix, A. J.; Zhou, X. -F.; Kiraly, B.

At the atomic-cluster scale, pure boron is markedly similar to carbon, forming simple planar molecules and cage-like fullerenes. Theoretical studies predict that two-dimensional (2D) boron sheets will adopt an atomic configuration similar to that of boron atomic clusters. We synthesized atomically thin, crystalline 2D boron sheets (i.e., borophene) on silver surfaces under ultrahigh-vacuum conditions. Atomic-scale characterization, supported by theoretical calculations, revealed structures reminiscent of fused boron clusters with multiple scales of anisotropic, out-of-plane buckling. Unlike bulk boron allotropes, borophene shows metallic characteristics that are consistent with predictions of a highly anisotropic, 2D metal.

Effect of low temperature oxidation (LTO) in reducing boron skin in boron spin on dopant diffused emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singha, Bandana; Solanki, Chetan Singh

Formation of boron skin is an unavoidable phenomenon in p-type emitter formation with boron dopant source. The boron skin thickness is generally less than 100 nm and difficult to remove by chemical and physical means. Low temperature oxidation (LTO) used in this work is useful in removing boron skin thickness up to 30 nm and improves the emitter performance. The effective minority carrier lifetime gets improved by more than 30% after using LTO and leakage current of the emitter gets lowered by 100 times thereby showing the importance of low temperature oxidation in boron spin on dopant diffused emitters.

[Citrus boron nutrient level and its impact factors in the Three Gorges Reservoir region of Chongqing, China].

PubMed

Zhou, Wei; Peng, Liang-Zhi; Chun, Chang-Pin; Jiang, Cai-Lun; Ling, Li-Li; Wang, Nan-Qi; Xing, Fei; Huang, Yi

2014-04-01

To investigate the level of boron nutrient in citrus and its impact factors, a total of 954 citrus leaf samples and 302 soil samples were collected from representative orchards in the 12 main citrus production counties in the Three Gorges Reservoir region of Chongqing to determine the boron content in citrus leaves, as well as the relationships between leaf boron content with soil available boron content, soil pH value, cultivar, rootstock and the age of tree. Results indicated that the leaf samples from 41.6% orchards (< 35 mg x kg(-1)) and the soil samples from 89.4% orchards (< 0.5 mg x kg(-1)) were boron insufficient. The correlation of leaf boron content and soil available boron content was not significant. The soil pH, cultivar, rootstock and the age of tree did affect the leaf boron content. The leaves from the orchards with soil pH of 4.5-6.4 demonstrated significantly higher boron contents than with the soil pH of 6.5-8.5. The leaf boron contents in the different cultivars was ranged as Satsuma mandarin > pomelo > valencia orange > sweet orange > tangor > navel orange. The citrus on trifoliate orange and sour pomelo rootstocks had significantly higher leaf boron contents than on Carrizo citrange and red tangerine rootstocks. Compared with the adult citrus trees (above 8 year-old), 6.6% more of leaf samples of younger trees (3 to 8 year-old) contained boron contents in the optimum range (35-100 mg x kg(-1)).

BN Bonded BN fiber article and method of manufacture

DOEpatents

Hamilton, Robert S.

1981-08-18

A boron nitride bonded boron nitride fiber article and the method for its manufacture which comprises forming a shaped article with a composition comprising a bonding compound selected from boron oxide and boric acid and a structural fiber selected from the group consisting of boron oxide, boron nitride and partially nitrided boron oxide fibers, heating the composition in an anhydrous gas to a temperature above the melting point of the compound and nitriding the resulting article in ammonia gas.

Boron hydride polymer coated substrates

DOEpatents

Pearson, R.K.; Bystroff, R.I.; Miller, D.E.

1986-08-27

A method is disclosed for coating a substrate with a uniformly smooth layer of a boron hydride polymer. The method comprises providing a reaction chamber which contains the substrate and the boron hydride plasma. A boron hydride feed stock is introduced into the chamber simultaneously with the generation of a plasma discharge within the chamber. A boron hydride plasma of ions, electrons and free radicals which is generated by the plasma discharge interacts to form a uniformly smooth boron hydride polymer which is deposited on the substrate.

Boron hydride polymer coated substrates

DOEpatents

Pearson, Richard K.; Bystroff, Roman I.; Miller, Dale E.

1987-01-01

A method is disclosed for coating a substrate with a uniformly smooth layer of a boron hydride polymer. The method comprises providing a reaction chamber which contains the substrate and the boron hydride plasma. A boron hydride feed stock is introduced into the chamber simultaneously with the generation of a plasma discharge within the chamber. A boron hydride plasma of ions, electrons and free radicals which is generated by the plasma discharge interacts to form a uniformly smooth boron hydride polymer which is deposited on the substrate.

Proposed physiologic functions of boron in plants pertinent to animal and human metabolism.

PubMed Central

Blevins, D G; Lukaszewski, K M

1994-01-01

Boron has been recognized since 1923 as an essential micronutrient element for higher plants. Over the years, many roles for boron in plants have been proposed, including functions in sugar transport, cell wall synthesis and lignification, cell wall structure, carbohydrate metabolism, RNA metabolism, respiration, indole acetic acid metabolism, phenol metabolism and membrane transport. However, the mechanism of boron involvement in each case remains unclear. Recent work has focused on two major plant-cell components: cell walls and membranes. In both, boron could play a structural role by bridging hydroxyl groups. In membranes, it could also be involved in ion transport and redox reactions by stimulating enzymes like nicotinamide adenine dinucleotide and reduced (NADH) oxidase. There is a very narrow window between the levels of boron required by and toxic to plants. The mechanisms of boron toxicity are also unknown. In nitrogen-fixing leguminous plants, foliarly applied boron causes up to a 1000% increase in the concentration of allantoic acid in leaves. In vitro studies show that boron inhibits the manganese-dependent allantoate amidohydrolase, and foliar application of manganese prior to application of boron eliminates allantoic acid accumulation in leaves. Interaction between borate and divalent cations like manganese may alter metabolic pathways, which could explain why higher concentrations of boron can be toxic to plants. PMID:7889877

Thermal neutron shield and method of manufacture

DOEpatents

Metzger, Bert Clayton; Brindza, Paul Daniel

2014-03-04

A thermal neutron shield comprising boron shielding panels with a high percentage of the element Boron. The panel is least 46% Boron by weight which maximizes the effectiveness of the shielding against thermal neutrons. The accompanying method discloses the manufacture of boron shielding panels which includes enriching the pre-cursor mixture with varying grit sizes of Boron Carbide.

Thermophysical and Electronic Properties Information Analysis Center (TEPIAC): A Continuing Systematic Program on Tables of Thermophysical and Electronic Properties of Materials.

DTIC Science & Technology

1977-02-01

oxides and their mixtures, arsenides, borides, bromides , carbides , chlorides , fluoride s, nitride s, phosphides, silicides , sulfides , tellurides...ivity of alkali elements (lithium , sodium , potassium , rubi- dium , ces ium , and francium) and contains recomme nded reference values generated

Pesticide Spill Prevention and Management

DTIC Science & Technology

2009-08-01

Gentrol IGR) Strong oxidizers. Imidacloprid Oxidizing agents. Lambda-cyhalothrin Oxidizing agents, alkalis, calcium hypochlorite. Malathion... Imidacloprid Sodium salt of diphacinone Methyl Azoxystrobin Use Hard Water Detergent for: Diquat Aluminum phosphide – NOTE: See special...Hydroprene, 9.0%, emulsifiable concentrate (Gentrol IGR) Imidacloprid (Maxforce Granular Fly Bait) Imidacloprid (Maxforce Fly Spot Bait

Effects of prairie dog rodenticides on deer mice in western South Dakota

Treesearch

Michele S. Deisch; Daniel W. Uresk; Raymond L. Linder

1990-01-01

Mortality of nontarget small mammals was determined after application of three black-tailed prairie dog (Cynomys Zudovicianus) rodenticide treatments (prebaited zinc phosphide, prebaited strychnine, and strychnine alone) in western South Dakota. Immediate (September 1983) and long-term (September 1983 through August 1984) impacts on deer mouse (...

Impacts of black-tailed prairie dog rodenticides on nontarget passerines

Treesearch

Anthony D. Apa; Daniel W. Uresk; Raymond L. Linder

1991-01-01

In 1983 zinc phosphide, strychnine with prebait, and strychnine without prebait were applied to black-tailed prairie dog (Cynomys Zudovicianus) colonies in west central South Dakota. Short-term (four days later) and long-term (one year later) impacts of the rodenticides on Horned Larks (Eremophila alpestris) and other...

Synthesis, salvage, and catabolism of uridine nucleotides in boron-deficient squash roots.

PubMed

Lovatt, C J; Albert, L S; Tremblay, G C

1981-12-01

Previous work has provided evidence that plants may require boron to maintain adequate levels of pyrimidine nucleotides, suggesting that the state of boron deficiency may actually be one of pyrimidine starvation. Since the availability of pyrimidine nucleotides is influenced by their rates of synthesis, salvage, and catabolism, we compared these activities in the terminal 3 centimeters of roots excised from boron-deficient and -sufficient squash plants (Cucurbita pepo L.). Transferring 5-day-old squash plants to a boron-deficient nutrient solution resulted in cessation of root elongation within 18 hours. However, withholding boron for up to 30 hours did not result in either impaired de novo pyrimidine biosynthesis or a change in the sensitivity of the de novo pathway to regulation by end product inhibition. Boron deprivation had no significant effect on pyrimidine salvage or catabolism. These results provide evidence that boron-deficient plants are not starved for uridine nucleotides collectively. Whether a particular pyrimidine nucleotide or derivative is limiting during boron deprivation remains to be examined.

Three-chain B{sub 6n+14} cages as possible precursors for the syntheses of boron fullerenes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Haigang, E-mail: luhg@sxu.edu.cn; Li, Si-Dian

Using the first principle methods, we proposed a series of three-chain boron cages B{sub 6n+14} (n = 1–12) which are mainly built by fusing three boron semi-double-rings. Their simple geometric structures (approximate D{sub 3} or C{sub 3} symmetry) facilitate their bottom-up syntheses from the hexagonal B{sub 7} and the double-chain boron clusters, such as B{sub 2}, B{sub 4}, B{sub 6}, B{sub 8}H{sub 2}, B{sub 10}H{sub 2}, B{sub 12}H{sub 2}, and the double ring B{sub 20}. The spherical shapes of these three-chain boron cages show that they could be taken as the possible precursors to further synthesize the boron fullerenes, suchmore » as B{sub 80}. Therefore, these three-chain boron cages provide a possible synthesis pathway of the boron fullerenes from the experimentally synthesized small planar boron clusters.« less

Asymmetric homologation of boronic esters bearing azido and silyloxy substituents.

PubMed

Singh, R P; Matteson, D S

2000-10-06

In the asymmetric homologation of boronic esters with a (dihalomethyl)lithium, substituents that can bind metal cations tend to interfere. Accordingly, we undertook the introduction of weakly basic oxygen and nitrogen substituents into boronic esters in order to maximize the efficiency of multistep syntheses utilizing this chemistry. Silyloxy boronic esters cannot be made efficiently by direct substitution, but a (hydroxymethyl)boronic ester has been silylated in the usual manner. Conversion of alpha-halo boronic esters to alpha-azido boronic esters has been carried out with sodium azide and a tetrabutylammonium salt as phase-transfer catalyst in a two-phase system with water and either nitromethane or ethyl acetate. These are safer solvents than the previously used dichloromethane, which can form an explosive byproduct with azide ion. Boronic esters containing silyloxy or alkoxy and azido substituents have been shown to react efficiently with (dihalomethyl)lithiums, resulting in efficient asymmetric insertion of the halomethyl group into the carbon-boron bond.

Boron chemicals in diagnosis and therapeutics

PubMed Central

Das, Bhaskar C; Thapa, Pritam; Karki, Radha; Schinke, Caroline; Das, Sasmita; Kambhampati, Suman; Banerjee, Sushanta K; Van Veldhuizen, Peter; Verma, Amit; Weiss, Louis M; Evans, Todd

2013-01-01

Advances in the field of boron chemistry have expanded the application of boron from material use to medicine. Boron-based drugs represent a new class of molecules that possess several biomedical applications including use as imaging agents for both optical and nuclear imaging as well as therapeutic agents with anticancer, antiviral, antibacterial, antifungal and other disease-specific activities. For example, bortezomib (Velcade®), the only drug in clinical use with boron as an active element, was approved in 2003 as a proteasome inhibitor for the treatment of multiple myeloma and non-Hodgkin’s lymphoma. Several other boron-based compounds are in various phases of clinical trials, which illustrates the promise of this approach for medicinal chemists working in the area of boron chemistry. It is expected that in the near future, several boron-containing drugs should become available in the market with better efficacy and potency than existing drugs. This article discusses the current status of the development of boron-based compounds as diagnostic and therapeutic agents in humans. PMID:23617429

Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohammadi, V., E-mail: V.Mohammadi@tudelft.nl; Nihtianov, S.

The lateral gas phase diffusion length of boron atoms, L{sub B}, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B{sub 2}H{sub 6}) is reported. The value of L{sub B} is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the boron deposition temperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the boron deposition is investigated on the micro scale. A L{sub B} = 2.2 mm was determined for boron deposition at 700 °C, while a L{sub B}more » of less than 1 mm was observed at temperatures lower than 500 °C.« less

Boron analysis for neutron capture therapy using particle-induced gamma-ray emission.

PubMed

Nakai, Kei; Yamamoto, Yohei; Okamoto, Emiko; Yamamoto, Tetsuya; Yoshida, Fumiyo; Matsumura, Akira; Yamada, Naoto; Kitamura, Akane; Koka, Masashi; Satoh, Takahiro

2015-12-01

The neutron source of BNCT is currently changing from reactor to accelerator, but peripheral facilities such as a dose-planning system and blood boron analysis have still not been established. To evaluate the potential application of particle-induced gamma-ray emission (PIGE) for boron measurement in clinical boron neutron capture therapy, boronophenylalanine dissolved within a cell culture medium was measured using PIGE. PIGE detected 18 μgB/mL f-BPA in the culture medium, and all measurements of any given sample were taken within 20 min. Two hours of f-BPA exposure was required to create a boron distribution image. However, even though boron remained in the cells, the boron on the cell membrane could not be distinguished from the boron in the cytoplasm. Copyright © 2015 Elsevier Ltd. All rights reserved.

The versatility of boron in biological target engagement

NASA Astrophysics Data System (ADS)

Diaz, Diego B.; Yudin, Andrei K.

2017-08-01

Boron-containing molecules have been extensively used for the purposes of chemical sensing, biological probe development and drug discovery. Due to boron's empty p orbital, it can coordinate to heteroatoms such as oxygen and nitrogen. This reversible covalent mode of interaction has led to the use of boron as bait for nucleophilic residues in disease-associated proteins, culminating in the approval of new therapeutics that work by covalent mechanisms. Our analysis of a wide range of covalent inhibitors with electrophilic groups suggests that boron is a unique electrophile in its chameleonic ability to engage protein targets. Here we review boron's interactions with a range of protein side-chain residues and reveal that boron's properties are nuanced and arise from its uncommon coordination preferences. These mechanistic and structural insights should serve as a guide for the development of selective boron-based bioactive molecules.

Methylboronic acid fertilization alleviates boron deficiency symptoms in Arabidopsis thaliana.

PubMed

Duran, Catherine; Arce-Johnson, Patricio; Aquea, Felipe

2018-07-01

Our results showed that methylboronic acid is capable of alleviating boron deficiency, enhancing plant growth, and is less toxic than boric acid at higher concentrations. Boron is an essential plant micronutrient and its deficiency occurs in several regions globally, resulting in impaired plant growth. Boron fertilization is a common agricultural practice, but the action range of boron is narrow, sharply transitioning from deficiency to toxicity. Boric acid (BA) is the most common chemical form used in agriculture. In this work, we describe that methylboronic acid (MBA) is capable of alleviating boron deficiency in Arabidopsis. MBA is a boronic acid, but does not naturally occur in soils, necessitating synthesis. Other boronic acids have been described as boron competitors in plants, inhibiting auxin biosynthesis and root development. MBA is more water-soluble than BA and delivers the same amount of boron per molecule. We observed that Arabidopsis seedlings grown in the presence of MBA presented higher numbers of lateral roots and greater main root length compared to plants grown in BA. In addition, root hair length and leaf surface area were increased using MBA as a boron fertilizer. Finally, MBA was less toxic than BA at high concentrations, producing a slight reduction in the main root length but no decrease in total chlorophyll. Our results open a new opportunity to explore the use of a synthetic form of boron in agriculture, providing a tool for future research for plant nutrition.

Boron supercapacitors

DOE PAGES

Zhan, Cheng; Zhang, Pengfei; Dai, Sheng; ...

2016-11-16

Supercapacitors based on the electric double-layer mechanism use porous carbons or graphene as electrodes. To move beyond this paradigm, we propose boron supercapacitors to leverage two-dimensional (2D) boron sheets’ metallicity and low weight. Six 2D boron sheets from both previous theoretical design and experimental growth are chosen as test electrodes. By applying joint density functional theory (JDFT) to the electrode–electrolyte system, we examine how the 2D boron sheets charge up against applied potential. JDFT predicts that these 2D boron sheets exhibit specific capacitance on the order of 400 F/g, about four times that of graphene. As a result, our workmore » suggests that 2D boron sheets are promising electrodes for supercapacitor applications.« less

Synthesis of borophenes: Anisotropic, two-dimensional boron polymorphs.

PubMed

Mannix, Andrew J; Zhou, Xiang-Feng; Kiraly, Brian; Wood, Joshua D; Alducin, Diego; Myers, Benjamin D; Liu, Xiaolong; Fisher, Brandon L; Santiago, Ulises; Guest, Jeffrey R; Yacaman, Miguel Jose; Ponce, Arturo; Oganov, Artem R; Hersam, Mark C; Guisinger, Nathan P

2015-12-18

At the atomic-cluster scale, pure boron is markedly similar to carbon, forming simple planar molecules and cage-like fullerenes. Theoretical studies predict that two-dimensional (2D) boron sheets will adopt an atomic configuration similar to that of boron atomic clusters. We synthesized atomically thin, crystalline 2D boron sheets (i.e., borophene) on silver surfaces under ultrahigh-vacuum conditions. Atomic-scale characterization, supported by theoretical calculations, revealed structures reminiscent of fused boron clusters with multiple scales of anisotropic, out-of-plane buckling. Unlike bulk boron allotropes, borophene shows metallic characteristics that are consistent with predictions of a highly anisotropic, 2D metal. Copyright © 2015, American Association for the Advancement of Science.

Boron supercapacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhan, Cheng; Zhang, Pengfei; Dai, Sheng

Supercapacitors based on the electric double-layer mechanism use porous carbons or graphene as electrodes. To move beyond this paradigm, we propose boron supercapacitors to leverage two-dimensional (2D) boron sheets’ metallicity and low weight. Six 2D boron sheets from both previous theoretical design and experimental growth are chosen as test electrodes. By applying joint density functional theory (JDFT) to the electrode–electrolyte system, we examine how the 2D boron sheets charge up against applied potential. JDFT predicts that these 2D boron sheets exhibit specific capacitance on the order of 400 F/g, about four times that of graphene. As a result, our workmore » suggests that 2D boron sheets are promising electrodes for supercapacitor applications.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomai, S.; Graduate School of Material Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma, Nara 6300192; Terai, K.

We have developed a high-mobility and high-uniform oxide semiconductor using poly-crystalline semiconductor material composed of indium and zinc (p-IZO). A typical conduction mechanism of p-IZO film was demonstrated by the grain boundary scattering model as in polycrystalline silicon. The grain boundary potential of the 2-h-annealed IZO film was calculated to be 100 meV, which was comparable to that of the polycrystalline silicon. However, the p-IZO thin film transistor (TFT) measurement shows rather uniform characteristics. It denotes that the mobility deterioration around the grain boundaries is lower than the case for low-temperature polycrystalline silicon. This assertion was made based on the differencemore » of the mobility between the polycrystalline and amorphous IZO film being much smaller than is the case for silicon transistors. Therefore, we conclude that the p-IZO is a promising material for a TFT channel, which realizes high drift mobility and uniformity simultaneously.« less

Process Research on Polycrystalline Silicon Material (PROPSM)

NASA Technical Reports Server (NTRS)

Culik, J. S.

1983-01-01

The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

Crystalline boron nitride aerogels

DOEpatents

Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

2017-04-04

This disclosure provides methods and materials related to boron nitride aerogels. In one aspect, a material comprises an aerogel comprising boron nitride. The boron nitride has an ordered crystalline structure. The ordered crystalline structure may include atomic layers of hexagonal boron nitride lying on top of one another, with atoms contained in a first layer being superimposed on atoms contained in a second layer.

Process for making boron nitride using sodium cyanide and boron

DOEpatents

Bamberger, Carlos E.

1990-02-06

This a very simple process for making boron nitride by mixing sodium cyanide and boron phosphate and heating the mixture in an inert atmosphere until a reaction takes place. The product is a white powder of boron nitride that can be used in applications that require compounds that are stable at high temperatures and that exhibit high electrical resistance.

Process for making boron nitride using sodium cyanide and boron

DOEpatents

Bamberger, Carlos E.

1990-01-01

This a very simple process for making boron nitride by mixing sodium cyanide and boron phosphate and heating the mixture in an inert atmosphere until a reaction takes place. The product is a white powder of boron nitride that can be used in applications that require compounds that are stable at high temperatures and that exhibit high electrical resistance.

Boron Toxicity Causes Multiple Effects on Malus domestica Pollen Tube Growth.

PubMed

Fang, Kefeng; Zhang, Weiwei; Xing, Yu; Zhang, Qing; Yang, Liu; Cao, Qingqin; Qin, Ling

2016-01-01

Boron is an important micronutrient for plants. However, boron is also toxic to cells at high concentrations, although the mechanism of this toxicity is not known. This study aimed to evaluate the effect of boron toxicity on Malus domestica pollen tube growth and its possible regulatory pathway. Our results showed that a high concentration of boron inhibited pollen germination and tube growth and led to the morphological abnormality of pollen tubes. Fluorescent labeling coupled with a scanning ion-selective electrode technique detected that boron toxicity could decrease [Ca(2+)]c and induce the disappearance of the [Ca(2+)]c gradient, which are critical for pollen tube polar growth. Actin filaments were therefore altered by boron toxicity. Immuno-localization and fluorescence labeling, together with fourier-transform infrared analysis, suggested that boron toxicity influenced the accumulation and distribution of callose, de-esterified pectins, esterified pectins, and arabinogalactan proteins in pollen tubes. All of the above results provide new insights into the regulatory role of boron in pollen tube development. In summary, boron likely plays a structural and regulatory role in relation to [Ca(2+)]c, actin cytoskeleton and cell wall components and thus regulates Malus domestica pollen germination and tube polar growth.

Boron Toxicity Causes Multiple Effects on Malus domestica Pollen Tube Growth

PubMed Central

Fang, Kefeng; Zhang, Weiwei; Xing, Yu; Zhang, Qing; Yang, Liu; Cao, Qingqin; Qin, Ling

2016-01-01

Boron is an important micronutrient for plants. However, boron is also toxic to cells at high concentrations, although the mechanism of this toxicity is not known. This study aimed to evaluate the effect of boron toxicity on Malus domestica pollen tube growth and its possible regulatory pathway. Our results showed that a high concentration of boron inhibited pollen germination and tube growth and led to the morphological abnormality of pollen tubes. Fluorescent labeling coupled with a scanning ion-selective electrode technique detected that boron toxicity could decrease [Ca2+]c and induce the disappearance of the [Ca2+]c gradient, which are critical for pollen tube polar growth. Actin filaments were therefore altered by boron toxicity. Immuno-localization and fluorescence labeling, together with fourier-transform infrared analysis, suggested that boron toxicity influenced the accumulation and distribution of callose, de-esterified pectins, esterified pectins, and arabinogalactan proteins in pollen tubes. All of the above results provide new insights into the regulatory role of boron in pollen tube development. In summary, boron likely plays a structural and regulatory role in relation to [Ca2+]c, actin cytoskeleton and cell wall components and thus regulates Malus domestica pollen germination and tube polar growth. PMID:26955377

Application of proton boron fusion reaction to radiation therapy: A Monte Carlo simulation study

NASA Astrophysics Data System (ADS)

Yoon, Do-Kun; Jung, Joo-Young; Suh, Tae Suk

2014-12-01

Three alpha particles are emitted from the point of reaction between a proton and boron. The alpha particles are effective in inducing the death of a tumor cell. After boron is accumulated in the tumor region, the emitted from outside the body proton can react with the boron in the tumor region. An increase of the proton's maximum dose level is caused by the boron and only the tumor cell is damaged more critically. In addition, a prompt gamma ray is emitted from the proton boron reaction point. Here, we show that the effectiveness of the proton boron fusion therapy was verified using Monte Carlo simulations. We found that a dramatic increase by more than half of the proton's maximum dose level was induced by the boron in the tumor region. This increase occurred only when the proton's maximum dose point was located within the boron uptake region. In addition, the 719 keV prompt gamma ray peak produced by the proton boron fusion reaction was positively detected. This therapy method features the advantages such as the application of Bragg-peak to the therapy, the accurate targeting of tumor, improved therapy effects, and the monitoring of the therapy region during treatment.

Ultrahigh pressure deformation of polycrystaline hcp-cobalt

NASA Astrophysics Data System (ADS)

Merkel, S.; Antonangeli, D.; Fiquet, G.; Yagi, T.

2003-12-01

During the past few years, a novel set of methods has been developed allowing direct measurements on elasticity and rheology under static ultrahigh pressures using synchrotron x-ray diffraction and the diamond anvil cell. In particular, the analysis on the development of texture and uniaxial stress in a polycrystalline sample under ultrahigh pressure and non-hydrostatic conditions yielded to very interesting results on the microscopic deformation mechanisms and strength of MgO, silicate perovskite or ɛ -Fe [eg. Merkel et al. 2002, Merkel et al. 2003]. However, our understanding of the properties of the ɛ phase of iron remains poor. There are considerable uncertainties and disagreement on the results of various experiments or first-principles calculations. In particular, the results of the radial diffraction measurement on ɛ -Fe [Mao et al. 1998] have been highly controversial. In order to address this issue, we performed investigations on polycrystalline hcp-cobalt. Its properties such as the bulk modulus and thermal expansion are very close to those of ɛ -Fe and it is readily available under ambient conditions. Thus, it is a well known material and results from the high pressure radial diffraction experiments can be compared with those from well-established techniques. In the present analysis, we performed a new set a measurements between 0 and 20 GPa under ambient temperature conditions at the ESRF synchrotron source using amorphous boron gasket, monochromatic x-ray beam, and imaging plate techniques. From such an experiment, we are able to extract information on non-hydrostatic stress, elasticity, and preferred orientations of the sample in-situ under high pressure and compare them with results obtained previously on ɛ -Fe. Documenting the evolution of stress, elasticity and texture in hcp metals is of great interest for our understanding of the bulk properties and seismic anisotropy of the Earth's inner core. S. Merkel et al., J. Geophys. Res. 107 (2002) doi: 10.129/2001JB000920. S. Merkel et al., Earth Planet. Sci. Lett. 209 (2003) 351. H. Mao et al., Nature 396 (1998), 741

Nondestructive ultrasonic characterization of armor grade silicon carbide

NASA Astrophysics Data System (ADS)

Portune, Andrew Richard

Ceramic materials have traditionally been chosen for armor applications for their superior mechanical properties and low densities. At high strain rates seen during ballistic events, the behavior of these materials relies upon the total volumetric flaw concentration more so than any single anomalous flaw. In this context flaws can be defined as any microstructural feature which detriments the performance of the material, potentially including secondary phases, pores, or unreacted sintering additives. Predicting the performance of armor grade ceramic materials depends on knowledge of the absolute and relative concentration and size distribution of bulk heterogeneities. Ultrasound was chosen as a nondestructive technique for characterizing the microstructure of dense silicon carbide ceramics. Acoustic waves interact elastically with grains and inclusions in large sample volumes, and were well suited to determine concentration and size distribution variations for solid inclusions. Methodology was developed for rapid acquisition and analysis of attenuation coefficient spectra. Measurements were conducted at individual points and over large sample areas using a novel technique entitled scanning acoustic spectroscopy. Loss spectra were split into absorption and scattering dominant frequency regimes to simplify analysis. The primary absorption mechanism in polycrystalline silicon carbide was identified as thermoelastic in nature. Correlations between microstructural conditions and parameters within the absorption equation were established through study of commercial and custom engineered SiC materials. Nonlinear least squares regression analysis was used to estimate the size distributions of boron carbide and carbon inclusions within commercial SiC materials. This technique was shown to additionally be capable of approximating grain size distributions in engineered SiC materials which did not contain solid inclusions. Comparisons to results from electron microscopy exhibited favorable agreement between predicted and observed distributions. Developed techniques were applied to large sample areas using scanning acoustic spectroscopy to map variations in the size distribution and concentration of grains and solid inclusions within the bulk microstructure. The experiments performed in this thesis form the foundation of a novel characterization technique capable of mapping variations in sample composition which could be extended to a wide range of dense polycrystalline heterogeneous materials.

Characterization of Boron Contamination in Fluorine Implantation using Boron Trifluoride as a Source Material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmeide, Matthias; Kondratenko, Serguei

2011-01-07

Fluorine implantation process purity was considered on different types of high current implanters. It was found that implanters equipped with an indirectly heated cathode ion source show an enhanced deep boron contamination compared to a high current implanter using a cold RF-driven multicusp ion source when boron trifluoride is used for fluorine implantations. This contamination is directly related to the source technology and thus, should be considered potentially for any implanter design using hot cathode/hot filament ion source, independently of the manufacturer.The boron contamination results from the generation of double charged boron ions in the arc chamber and the subsequentmore » charge exchange reaction to single charged boron ions taking place between the arc chamber and the extraction electrode. The generation of the double charged boron ions depends mostly on the source parameters, whereas the pressure in the region between the arc chamber and the extraction electrode is mostly responsible for the charge exchange from double charged to single charged ions. The apparent mass covers a wide range, starting at mass 11. A portion of boron ions with energies of (19/11) times higher than fluorine energy has the same magnetic rigidity as fluorine beam and cannot be separated by the analyzer magnet. The earlier described charge exchange effects between the extraction electrode and the entrance to the analyzer magnet, however, generates boron beam with a higher magnetic rigidity compared to fluorine beam and cannot cause boron contamination after mass-separation.The energetic boron contamination was studied as a function of the ion source parameters, such as gas flow, arc voltage, and source magnet settings, as well as analyzing magnet aperture resolution. This allows process optimization reducing boron contamination to the level acceptable for device performance.« less

Mathematical modeling based evaluation and simulation of boron removal in bioelectrochemical systems.

PubMed

Ping, Qingyun; Abu-Reesh, Ibrahim M; He, Zhen

2016-11-01

Boron removal is an arising issue in desalination plants due to boron's toxicity. As an emerging treatment concept, bioelectrochemical systems (BES) can achieve potentially cost-effective boron removal by taking advantage of cathodic-produced alkali. Prior studies have demonstrated successful removal of boron in microbial desalination cells (MDCs) and microbial fuel cells (MFCs), both of which are representative BES. Herein, mathematical models were developed to further evaluate boron removal by different BES and understand the key operating factors. The models delivered very good prediction of the boron concentration in the MDC integrated with Donnan Dialysis (DD) system with the lowest relative root-mean-square error (RMSE) of 0.00%; the predication of the MFC performance generated the highest RMSE of 18.55%. The model results of salt concentration, solution pH, and current generation were well fitted with experimental data for RMSE values mostly below 10%. The long term simulation of the MDC-DD system suggests that the accumulation of salt in the catholyte/stripping solution could have a positive impact on the removal of boron due to osmosis-driven convection. The current generation in the MDC may have little influence on the boron removal, while in the MFC the current-driven electromigration can contribute up to 40% of boron removal. Osmosis-induced convection transport of boron could be the major driving force for boron removal to a low level <2mgL(-1). The ratio between the anolyte and the catholyte flow rates should be kept >22.2 in order to avoid boron accumulation in the anolyte effluent. Copyright © 2016 Elsevier B.V. All rights reserved.

Biological effects of tolerable level chronic boron intake on transcription factors.

PubMed

Orenay Boyacioglu, Seda; Korkmaz, Mehmet; Kahraman, Erkan; Yildirim, Hatice; Bora, Selin; Ataman, Osman Yavuz

2017-01-01

The mechanism of boron effect on human transcription and translation has not been fully understood. In the current study it was aimed to reveal the role of boron on the expression of certain transcription factors that play key roles in many cellular pathways on human subjects chronically exposed to low amounts of boron. The boron concentrations in drinking water samples were 1.57±0.06mg/l for boron group while the corresponding value for the control group was 0.016±0.002mg/l. RNA isolation was performed using PAX gene RNA kit on the blood samples from the subjects. The RNA was then reverse transcribed into cDNA and analyzed using the Human Transcription Factors RT 2 Profiler™ PCR Arrays. While the boron amount in urine was detected as 3.56±1.47mg/day in the boron group, it was 0.72±0.30mg/day in the control group. Daily boron intake of the boron and control groups were calculated to be 6.98±3.39 and 1.18±0.41mg/day, respectively. The expression levels of the transcription factor genes were compared between the boron and control groups and no statistically significant difference was detected (P>0.05). The data suggest that boron intake at 6.98±3.39mg/day, which is the dose at which beneficial effects might be seen, does not result in toxicity at molecular level since the expression levels of transcription factors are not changed. Although boron intake over this level will seem to increase RNA synthesis, further examination of the topic is needed using new molecular epidemiological data. Copyright © 2016 Elsevier GmbH. All rights reserved.

Boron enhances strength and alters mineral composition of bone in rabbits fed a high energy diet.

PubMed

Hakki, Sema S; Dundar, Niyazi; Kayis, Seyit Ali; Hakki, Erdogan E; Hamurcu, Mehmet; Kerimoglu, Ulku; Baspinar, Nuri; Basoglu, Abdullah; Nielsen, Forrest H

2013-04-01

An experiment was performed to determine whether boron had a beneficial effect on bone strength and composition in rabbits with apparent adiposity induced by a high energy diet. Sixty female New Zealand rabbits, aged 8 months, were randomly divided into five groups with the following treatments for seven months: control 1, fed alfalfa hay only (5.91 MJ/kg); control 2, high energy diet (11.76 MJ and 3.88 mg boron/kg); B10, high energy diet+10 mg/kg body weight boron gavage/96 h; B30, high energy diet+30 mg/kg body weight boron gavage/96 h; B50, high energy diet+50mg/kg body weight boron gavage/96 h. Bone boron concentrations were lowest in rabbits fed the high energy diet without boron supplementation, which suggested an inferior boron status. Femur maximum breaking force was highest in the B50 rabbits. Tibia compression strength was highest in B30 and B50 rabbits. All boron treatments significantly increased calcium and magnesium concentrations, and the B30 and B50 treatments increased the phosphorus concentration in tibia of rabbits fed the high energy diet. The B30 treatment significantly increased calcium, phosphorus and magnesium concentrations in femur of rabbits fed the high energy diet. Principal component analysis of the tibia minerals showed that the three boron treatments formed a separate cluster from controls. Discriminant analysis suggested that the concentrations of the minerals in femur could predict boron treatment. The findings indicate boron has beneficial effects on bone strength and mineral composition in rabbits fed a high energy diet. Copyright © 2012 Elsevier GmbH. All rights reserved.

Decreasing boron concentrations in UK rivers: insights into reductions in detergent formulations since the 1990s and within-catchment storage issues.

PubMed

Neal, Colin; Williams, Richard J; Bowes, Michael J; Harrass, Michael C; Neal, Margaret; Rowland, Philip; Wickham, Heather; Thacker, Sarah; Harman, Sarah; Vincent, Colin; Jarvie, Helen P

2010-02-15

The changing patterns of riverine boron concentration are examined for the Thames catchment in southern/southeastern England using data from 1997 to 2007. Boron concentrations are related to an independent marker for sewage effluent, sodium. The results show that boron concentrations in the main river channels have declined with time especially under baseflow conditions when sewage effluent dilution potential is at its lowest. While boron concentrations have reduced, especially under low-flow conditions, this does not fully translate to a corresponding reduction in boron flux and it seems that the "within-catchment" supplies of boron to the river are contaminated by urban sources. The estimated boron reduction in the effluent input to the river based on the changes in river chemistry is typically around 60% and this figure matches with an initial survey of more limited data for the industrial north of England. Data for effluent concentrations at eight sewage treatment works within the Kennet also indicate substantial reductions in boron concentrations: 80% reduction occurred between 2001 and 2008. For the more contaminated rivers there are issues of localised rather than catchment-wide sources and uncertainties over the extent and nature of water/boron stores. Atmospheric sources average around 32 to 61% for the cleaner and 4 to 14% for the more polluted parts. The substantial decreases in the boron concentrations correspond extremely well with the timing and extent of European wide trends for reductions in the industrial and domestic usage of boron-bearing compounds. It clearly indicates that such reductions have translated into lower average and peak concentrations of boron in the river although the full extent of these reductions has probably not yet occurred due to localised stores that are still to deplete.

An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation.

PubMed

Yilmaz, A Erdem; Boncukcuoğlu, Recep; Kocakerim, M Muhtar

2007-06-01

In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0 mA/cm(2), initial boron concentration 100mg/L and solution temperature 293 K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following; [formula in text]. Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

SU-D-304-07: Application of Proton Boron Fusion Reaction to Radiation Therapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, J; Yoon, D; Shin, H

Purpose: we present the introduction of a therapy method using the proton boron fusion reaction. The purpose of this study is to verify the theoretical validity of proton boron fusion therapy using Monte Carlo simulations. Methods: After boron is accumulated in the tumor region, the emitted from outside the body proton can react with the boron in the tumor region. An increase of the proton’s maximum dose level is caused by the boron and only the tumor cell is damaged more critically. In addition, a prompt gamma ray is emitted from the proton boron reaction point. Here we show thatmore » the effectiveness of the proton boron fusion therapy (PBFT) was verified using Monte Carlo simulations. Results: We found that a dramatic increase by more than half of the proton’s maximum dose level was induced by the boron in the tumor region. This increase occurred only when the proton’s maximum dose point was located within the boron uptake region (BUR). In addition, the 719 keV prompt gamma ray peak produced by the proton boron fusion reaction was positively detected. Conclusion: This therapy method features the advantages such as the application of Bragg-peak to the therapy, the accurate targeting of tumor, improved therapy effects, and the monitoring of the therapy region during treatment.« less

Evaluation of Ground-Water and Boron Sources by Use of Boron Stable-Isotope Ratios, Tritium, and Selected Water-Chemistry Constituents near Beverly Shores, Northwestern Indiana, 2004

USGS Publications Warehouse

Buszka, Paul M.; Fitzpatrick, John A.; Watson, Lee R.; Kay, Robert T.

2007-01-01

Concentrations of boron greater than the U.S. Environmental Protection Agency (USEPA) 900 ?g/L removal action level (RAL) standard were detected in water sampled by the USEPA in 2004 from three domestic wells near Beverly Shores, Indiana. The RAL regulates only human-affected concentrations of a constituent. A lack of well logs and screened depth information precluded identification of whether water from sampled wells, and their boron sources, were from human-affected or natural sources in the surficial aquifer, or associated with a previously defined natural, confined aquifer source of boron from the subtill or basal sand aquifers. A geochemically-based classification of the source of boron in ground water could potentially determine the similarity of boron to known sources or mixtures between known sources, or classify whether the relative age of the ground water predated the potential sources of contamination. The U.S. Geological Survey (USGS), in cooperation with the USEPA, investigated the use of a geochemical method that applied boron stable isotopes, and concentrations of boron, tritium, and other constituents to distinguish between natural and human-affected sources of boron in ground water and thereby determine if the RAL was applicable to the situation. Boron stable-isotope ratios and concentrations of boron in 17 ground-water samples and tritium concentrations in 9 ground-water samples collected in 2004 were used to identify geochemical differences between potential sources of boron in ground water near Beverly Shores, Indiana. Boron and d11B analyses for this investigation were made on unacidified samples to assure consistency of the result with unacidified analyses of d11B values from other investigations. Potential sources of boron included surficial-aquifer water affected by coal-combustion products (CCP) or domestic-wastewater, upward discharge of ground water from confined aquifers, and unaffected water from the surficial aquifer that was distant from human-affected boron sources. Boron concentrations in potential ground-water sources of boron were largest (15,700 to 24,400 ?g/L) in samples of CCP-affected surficial aquifer water from four wells at a CCP landfill and smallest (27 to 63 ?g/L) in three wells in the surficial aquifer that were distant from human-affected boron sources. Boron concentrations in water from the basal sand aquifer ranged from 656 ?g/L to 1,800 ?g/L. Boron concentrations in water from three domestic-wastewater-affected surficial aquifer wells ranged from 84 to 387 ?g/L. Among the representative ground-water samples, boron concentrations from all four samples of CCP-affected surficial aquifer water and four of five samples of water from the basal sand aquifer had concentrations greater than the RAL. A comparison of boron concentrations in acid-preserved and unacidified samples indicated that boron concentrations reported for this investigation may be from about 11 to 16 percent less than would be reported in a standard analysis of an acidified sample. The stable isotope boron-11 was most enriched in comparison to boron-10 in ground water from a confined aquifer, the basal sand aquifer (d11B, 24.6 to 34.0 per mil, five samples); it was most depleted in CCP-affected water from the surficial aquifer (d11B, 0.1 to 6.6 per mil, four samples). Domestic-wastewater-affected water from the surficial aquifer (d11B, 8.7 to 11.7 per mil, four samples) was enriched in boron-11, in comparison to individual samples of a borax detergent additive and a detergent with perborate bleach; it was intermediate in composition between basal sand aquifer water and CCP-affected water from the surficial aquifer. The similarity between a ground-water sample from the surficial aquifer and a hypothetical mixture of unaffected surficial aquifer and basal sand aquifer waters indicates the potential for long-term upward discharge of ground water into the surficial aquifer from one or more confined aquifers. Est

The Effect of Boronizing on Metallic Alloys for Automotive Applications

NASA Astrophysics Data System (ADS)

Petrova, Roumiana S.; Suwattananont, Naruemon; Samardzic, Veljko

2008-06-01

In this study the wear resistance, corrosion resistance, and oxidation resistance of boronized metallic alloys were investigated. Thermochemical treatment was performed by powder pack boronizing process at temperature 850-950 °C for 4 h. Saw-tooth morphology and smooth interface microstructures were observed with an optical microscope; microhardness was measured across the coating depth. The phases present in the boron coatings depend on the substrate material. High-temperature oxidation resistance was investigated and it was found that boron coating on ferrous alloys can resist temperatures up to 800 °C. The corrosion resistance of the boronized samples was improved and the corrosion rate was calculated for boronized and plain specimens. Wear testing was conducted by following the procedures of ASTM G99, ASTM D2526, and ASTM D4060. The obtained experimental results revealed that boronizing significantly improves the wear-resistance, corrosion-resistance, and oxidation resistance of metallic alloys.

Boron and oxygen-codoped porous carbon as efficient oxygen reduction catalysts

NASA Astrophysics Data System (ADS)

Lei, Zhidan; Chen, Hongbiao; Yang, Mei; Yang, Duanguang; Li, Huaming

2017-12-01

A low-cost boron- and oxygen-codoped porous carbon electrocatalyst towards oxygen reduction reaction (ORR) has been fabricated by a facile one-step pyrolysis approach, while a boron- and oxygen-rich polymer network was used as precursor. The boron- and oxygen-codoped carbon catalyst with high ORR electrocatalytic activity is comparable to that of Pt/C and is superior to that of catalysts doped solely with boron atoms or with oxygen atoms. Furthermore, the optimized boron- and oxygen-codoped carbon catalyst possesses excellent methanol tolerance and long-term durability in alkaline media. The high electrocatalytic activity of the dual-doped carbon catalysts can be attributed to the synergistic effects of high surface area, predominant mesostructure, abundant active oxygen-containing groups, and effective boron doping. The present results show that this boron- and oxygen-codoping strategy could be as a promising way for the preparation of highly efficient ORR catalysts.

Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire.

PubMed

Jang, A-Rang; Hong, Seokmo; Hyun, Chohee; Yoon, Seong In; Kim, Gwangwoo; Jeong, Hu Young; Shin, Tae Joo; Park, Sung O; Wong, Kester; Kwak, Sang Kyu; Park, Noejung; Yu, Kwangnam; Choi, Eunjip; Mishchenko, Artem; Withers, Freddie; Novoselov, Kostya S; Lim, Hyunseob; Shin, Hyeon Suk

2016-05-11

Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA' stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials.

Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

PubMed

Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

2014-06-24

The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

Stability of boron-doped graphene/copper interface: DFT, XPS and OSEE studies

NASA Astrophysics Data System (ADS)

Boukhvalov, D. W.; Zhidkov, I. S.; Kukharenko, A. I.; Slesarev, A. I.; Zatsepin, A. F.; Cholakh, S. O.; Kurmaev, E. Z.

2018-05-01

Two different types of boron-doped graphene/copper interfaces synthesized using two different flow rates of Ar through the bubbler containing the boron source were studied. X-ray photoelectron spectra (XPS) and optically stimulated electron emission (OSEE) measurements have demonstrated that boron-doped graphene coating provides a high corrosion resistivity of Cu-substrate with the light traces of the oxidation of carbon cover. The density functional theory calculations suggest that for the case of substitutional (graphitic) boron-defect only the oxidation near boron impurity is energetically favorable and creation of the vacancies that can induce the oxidation of copper substrate is energetically unfavorable. In the case of non-graphitic boron defects oxidation of the area, a nearby impurity is metastable that not only prevent oxidation but makes boron-doped graphene. Modeling of oxygen reduction reaction demonstrates high catalytic performance of these materials.

Polycrystalline ferroelectric or multiferroic oxide articles on biaxially textured substrates and methods for making same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goyal, Amit; Shin, Junsoo

A polycrystalline ferroelectric and/or multiferroic oxide article includes a substrate having a biaxially textured surface; at least one biaxially textured buffer layer supported by the substrate; and a biaxially textured ferroelectric or multiferroic oxide layer supported by the buffer layer. Methods for making polycrystalline ferroelectric and/or multiferroic oxide articles are also disclosed.

Atomistic modeling of mechanical properties of polycrystalline graphene.

PubMed

Mortazavi, Bohayra; Cuniberti, Gianaurelio

2014-05-30

We performed molecular dynamics (MD) simulations to investigate the mechanical properties of polycrystalline graphene. By constructing molecular models of ultra-fine-grained graphene structures, we studied the effect of different grain sizes of 1-10 nm on the mechanical response of graphene. We found that the elastic modulus and tensile strength of polycrystalline graphene decrease with decreasing grain size. The calculated mechanical proprieties for pristine and polycrystalline graphene sheets are found to be in agreement with experimental results in the literature. Our MD results suggest that the ultra-fine-grained graphene structures can show ultrahigh tensile strength and elastic modulus values that are very close to those of pristine graphene sheets.

Synthesis and optical properties of polycrystalline Li2Al2B2O7 (LABO)

NASA Astrophysics Data System (ADS)

Dagdale, S. R.; Muley, G. G.

2016-05-01

A polycrystalline lithium aluminum borate (Li2Al2B2O7, LABO) has been synthesized by using simple solid-state technique. The obtained LABO polycrystalline was characterized by powder X-ray diffraction; Fourier transform infrared (FT-IR) spectroscopy and second harmonic generation (SHG) efficiency measurement. The functional groups were identified using the FT-IR spectroscopic data. The SHG efficiency of the polycrystalline material was obtained by the classic Kurtz powder technique using a fundamental wavelength 1064 nm of Nd:YAG laser and it is found to be 1.4 times that of potassium dihydrogen phosphate (KDP).

Effect of grain size on optical transmittance of birefringent polycrystalline ceramics

NASA Astrophysics Data System (ADS)

Wen, Tzu-Chien

Polycrystalline ceramics are increasingly used for fabricating windows and domes for the mid infra-red regime (3-5 mum) due to their superior durability as compared to glass and the lower cost of their fabrication and finishing relative to single crystals without significant compromise in optical properties. Due to the noncubic structure, MgF2 and Al2O3 are birefringent ceramics. Birefringence causes scatter of light at the grain boundaries and diminishes in-line transmittance and optical performance. This dissertation presents experimental results and analyses of the grain-size and wavelength dependence of the in-line transmittance of polycrystalline MgF2 and Al2O3. Chapter 2 presents experimental results and analyses of light transmission in polycrystalline MgF2 as a function of the mean grain size at different wavelengths. The scattering coefficient of polycrystalline MgF 2 increased linearly with the mean grain size and inversely with the square of the wavelength of light. These trends are consistent with theoretical models based on both a limiting form of the Raleigh-Gans-Debye theory of particle scattering and light retardation theories that take refractive-index variations along the light path. Chapter 3 investigates the applicability of particle light scattering theories to light attenuation in birefringent polycrystalline ceramics by measuring light transmittance in a model two-phase system. The system consisted of microspheres of silica dispersed in a solution of glycerol in water. It was found that RGD theory showed the systematic deviation for higher particle volume fraction (φ > 0.2) and larger particle size (d p > 1 mum). This result suggested that light scattering models based on single particle scattering are unlikely to provide viable physical explanation for the effect of grain size on light transmittance in birefringent polycrystalline ceramics due to the high volume fraction in dense polycrystalline ceramics. Chapter 4 analyses light transmission properties of polycrystalline Al 2O3 using theories of wave propagation in random media. Fully dense polycrystalline Al2O3 was fabricated using a pressure filtration method. By obtaining the Delta n2 measured from EBSD, the wave retardation theories of Raman and Viswanathan and Kahan et al. provided upper and lower bounds for the theoretical predictions of light transmittance as a function of mean intercept length.

Boron- and salt-tolerant trees and shrubs for northern Nevada

Treesearch

Heidi Kratsch

2012-01-01

Boron is a mineral that, in small quantities, is essential for plant growth and development , but becomes toxic at levels above 0.5 to 1 part per million (ppm) in the soil. Excess boron may be naturally present in the soil, and it can accumulate by irrigating with water high in boron. Boron occurs naturally in arid soils originating from geologically young deposits. It...

Characterization of boron carbide with an electron microprobe

NASA Technical Reports Server (NTRS)

Matteudi, G.; Ruste, J.

1983-01-01

Within the framework of a study of heterogeneous materials (Matteudi et al., 1971: Matteudi and Verchery, 1972) thin deposits of boron carbide were characterized. Experiments using an electronic probe microanalyzer to analyze solid boron carbide or boron carbide in the form of thick deposits are described. Quantitative results on boron and carbon are very close to those obtained when applying the Monte Carlo-type correction calculations.

Chemical disposition of boron in animals and humans.

PubMed Central

Moseman, R F

1994-01-01

Elemental boron was isolated in 1808. It typically occurs in nature as borates hydrated with varying amounts of water. Important compounds are boric acid and borax. Boron compounds are also used in the production of metals, enamels, and glasses. In trace amounts, boron is essential for the growth of many plants, and is found in animal and human tissues at low concentrations. Poisoning in humans has been reported as the result of accidental ingestion or use of large amounts in the treatment of burns. Boron as boric acid is fairly rapidly absorbed and excreted from the body via urine. The half-life of boric acid in humans is on the order of 1 day. Boron does not appear to accumulate in soft tissues of animals, but does accumulate in bone. Normal levels of boron in soft tissues, urine, and blood generally range from less than 0.05 ppm to no more than 10 ppm. In poisoning incidents, the amount of boric acid in brain and liver tissue has been reported to be as high as 2000 ppm. Recent studies at the National Institute of Environmental Health Sciences have indicated that boron may contribute to reduced fertility in male rodents fed 9000 ppm of boric acid in feed. Within a few days, boron levels in blood and most soft tissues quickly reached a plateau of about 15 ppm. Boron in bone did not appear to plateau, reaching 47 ppm after 7 days on the diet. Cessation of exposure to dietary boron resulted in a rapid drop in bone boron.(ABSTRACT TRUNCATED AT 250 WORDS) PMID:7889870

Geant4 beam model for boron neutron capture therapy: investigation of neutron dose components.

PubMed

Moghaddasi, Leyla; Bezak, Eva

2018-03-01

Boron neutron capture therapy (BNCT) is a biochemically-targeted type of radiotherapy, selectively delivering localized dose to tumour cells diffused in normal tissue, while minimizing normal tissue toxicity. BNCT is based on thermal neutron capture by stable [Formula: see text]B nuclei resulting in emission of short-ranged alpha particles and recoil [Formula: see text]Li nuclei. The purpose of the current work was to develop and validate a Monte Carlo BNCT beam model and to investigate contribution of individual dose components resulting of neutron interactions. A neutron beam model was developed in Geant4 and validated against published data. The neutron beam spectrum, obtained from literature for a cyclotron-produced beam, was irradiated to a water phantom with boron concentrations of 100 μg/g. The calculated percentage depth dose curves (PDDs) in the phantom were compared with published data to validate the beam model in terms of total and boron depth dose deposition. Subsequently, two sensitivity studies were conducted to quantify the impact of: (1) neutron beam spectrum, and (2) various boron concentrations on the boron dose component. Good agreement was achieved between the calculated and measured neutron beam PDDs (within 1%). The resulting boron depth dose deposition was also in agreement with measured data. The sensitivity study of several boron concentrations showed that the calculated boron dose gradually converged beyond 100 μg/g boron concentration. This results suggest that 100μg/g tumour boron concentration may be optimal and above this value limited increase in boron dose is expected for a given neutron flux.

Dietary Boron and Hormone Replacement Therapy as Risk Factors for Lung Cancer in Women

PubMed Central

Mahabir, S.; Spitz, M. R.; Barrera, S. L.; Dong, Y. Q.; Eastham, C.; Forman, M. R.

2012-01-01

Hormone replacement therapy (HRT) may reduce lung cancer risk. Dietary boron may have actions similar to those of HRT; however, no previous study has reported the associations between dietary boron intake and lung cancer risk or the joint effects of boron intake and HRT use on lung cancer risk. The authors examined the associations between boron intake and the joint effects of boron intake and HRT on lung cancer risk in women. In an ongoing case-control study in Houston, Texas (July 1995 through April 2005, end date for this analysis), 763 women were diagnosed with lung cancer, and 838 were matched healthy controls with data on both diet and HRT. Multiple logistic regression analyses were conducted to assess the associations between dietary boron and HRT with lung cancer risk. After adjustment for potential confounders, the odds ratios for lung cancer with decreasing quartiles of dietary boron intake were 1.0, 1.39 (95% confidence interval (CI): 1.02, 1.90), 1.64 (95% CI: 1.20, 2.24), and 1.95 (95% CI: 1.42, 2.68) mg/day, respectively, for all women (ptrend < 0.0001). In joint-effects analyses, compared with women with high dietary boron intake who used HRT, the odds ratio for lung cancer for low dietary boron intake and no HRT use was 2.07 (95% CI: 1.53, 2.81). Boron intake was inversely associated with lung cancer in women, whereas women who consumed low boron and did not use HRT were at substantial increased odds. PMID:18343880

Boron

USDA-ARS?s Scientific Manuscript database

Boron is an essential micronutrient element required for plant growth. Boron deficiency is wide-spread in crop plants throughout the world especially in coarse-textured soils in humid areas. Boron toxicity can also occur, especially in arid regions under irrigation. Plants respond directly to the...

Ignition kinetics of boron in primary combustion products of propellant based on its unique characteristics

NASA Astrophysics Data System (ADS)

Ao, Wen; Wang, Yang; Wu, Shixi

2017-07-01

Study on the boron-based primary combustion products can bridge the gap between primary combustion and secondary combustion in solid rocket ramjets. To clarify the initial state and ignition characteristics of boron particles in the after-burning chamber of solid rocket ramjets, the elemental, composition and morphology of the primary combustion products collected under gas generator chamber pressure of 0.2 MPa and 6 MPa were investigated by energy dispersive (EDS), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy with energy dispersive (SEM-EDS) individually. The ignition times of boron particles among the primary combustion products were determined using a high temperature tube furnace system. The BD model was adopted for numerical verification. The numerical solution procedure of boron ignition model in a real afterburner chamber was modified. The results show that the sum of B, C, O elements in the primary combustion products reaches approximately 90%. The primary combustion products are mainly consisted of B, C, and B2O3. Images of the primary combustion products present highly agglomeration, indicating an oxidation of boron surface. Numerous spherical carbon particles with a diameter around 100 nm are observed in the products. Three features of the boron in the primary combustion products are obtained, compared to virgin boron. First most of the boron lumps are covered by carbon particles on the surface. Second the mean particle size is five times larger than that of virgin boron. Third the overall initial oxide layer covered on boron surface increases its thickness by above 0.1 μm. The ignition time of boron in the primary combustion products reaches 20-30 ms under 1673-1873 K, which is quite different from virgin boron of 4 ms. Numerical calculation results show the key reason leading to such a long ignition time is the variation of the initial oxide layer thickness. In conclusion, the physicochemical properties of boron particles are found to differ with virgin boron after primary combustion process. The accurate evaluation of the initial oxide layer thickness and initial particle radius is a crucial procedure before the numerical calculation of boron ignition kinetics. Results of our study are expected to provide better insight in the simulation of solid rocket ramjets working process.

Magnetron sputtered boron films and TI/B multilayer structures

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1993-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and Ti/B multilayer structures

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1995-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and TI/B multilayer structures

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1993-04-20

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and Ti/B multilayer structures

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1995-02-14

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.

Study of the effects of focused high-energy boron ion implantation in diamond

NASA Astrophysics Data System (ADS)

Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

2017-08-01

Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

Application of proton boron fusion reaction to radiation therapy: A Monte Carlo simulation study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoon, Do-Kun; Jung, Joo-Young; Suh, Tae Suk, E-mail: suhsanta@catholic.ac.kr

2014-12-01

Three alpha particles are emitted from the point of reaction between a proton and boron. The alpha particles are effective in inducing the death of a tumor cell. After boron is accumulated in the tumor region, the emitted from outside the body proton can react with the boron in the tumor region. An increase of the proton's maximum dose level is caused by the boron and only the tumor cell is damaged more critically. In addition, a prompt gamma ray is emitted from the proton boron reaction point. Here, we show that the effectiveness of the proton boron fusion therapymore » was verified using Monte Carlo simulations. We found that a dramatic increase by more than half of the proton's maximum dose level was induced by the boron in the tumor region. This increase occurred only when the proton's maximum dose point was located within the boron uptake region. In addition, the 719 keV prompt gamma ray peak produced by the proton boron fusion reaction was positively detected. This therapy method features the advantages such as the application of Bragg-peak to the therapy, the accurate targeting of tumor, improved therapy effects, and the monitoring of the therapy region during treatment.« less

Chemical and structural characterization of boron carbide powders and ceramics

NASA Astrophysics Data System (ADS)

Kuwelkar, Kanak Anant

Boron carbide is the material of choice for lightweight armor applications due to its extreme hardness, high Young's modulus and low specific weight. The homogeneity range in boron carbide extends from 9 to 20 at% carbon with the solubility limits not uniquely defined in literature. Over the homogeneity range, the exact lattice positions of boron and carbon atoms have not been unambiguously established, and this topic has been the consideration of significant debate over the last 60 years. The atomic configuration and positions of the boron and carbon atoms play a key role in the crystal structure of the boron carbide phases. Depending on the atomic structure, boron carbide exhibits different mechanical properties which may alter its ballistic performance under extreme dynamic conditions. This work focusses on refinement and development of analytical and chemical methods for an accurate determination of the boron carbide stoichiometry. These methods were then utilized to link structural changes of boron carbide across the solubility range to variations in mechanical properties. After an extensive assessment of the currently employed characterization techniques, it was discerned that the largest source of uncertainty in the determination of the boron carbide stoichiometry was found to arise from the method utilized to evaluate the free carbon concentration. To this end, a modified spiking technique was introduced for free carbon determination where curve fitting techniques were employed to model the asymmetry of the 002 free carbon diffraction peak based on the amorphous, disordered and graphitic nature of carbon. A relationship was then established between the relative intensities of the carbon and boron carbide peaks to the percentage of added carbon and the free-carbon content was obtained by extrapolation. Samples with varying chemistry and high purity were synthesized across the solubility range by hot pressing mixtures of amorphous boron and boron carbide. Vibrational mode frequencies and lattice parameter measurements from Rietveld refinement were correlated to the respective B:C ratios calculated using the developed characterization techniques. An expansion of the unit cell and change in slope in the lattice parameter-stoichiometry relationship were observed at more boron rich stoichiometries. These observations were justified through the proposal of a simplified structural model considering preferential substitution of boron atoms for carbon atoms in the icosahedra from 20 at% to 13.3 at% carbon, followed by formation of B-B bonds from 13.3 at % C to 9 at% C. Hardness measurements uncovered decreased hardness values in boron rich boron carbide which was attributed to the formation of weaker unit cells. Load induced amorphization was also detected in all the indented materials. Finally, experimental observations have shown that failure in boron carbide may be governed by a mechanism other than amorphization and synthesizing boron carbide with a modified microstructure at stoichiometries close to B4C may be the way forward to attain improved ballistic performance.

Chemical and mechanical analysis of boron-rich boron carbide processed via spark plasma sintering

NASA Astrophysics Data System (ADS)

Munhollon, Tyler Lee

Boron carbide is a material of choice for many industrial and specialty applications due to the exceptional properties it exhibits such as high hardness, chemical inertness, low specific gravity, high neutron cross section and more. The combination of high hardness and low specific gravity makes it especially attractive for high pressure/high strain rate applications. However, boron carbide exhibits anomalous behavior when high pressures are applied. Impact pressures over the Hugoniot elastic limit result in catastrophic failure of the material. This failure has been linked to amorphization in cleavage planes and loss of shear strength. Atomistic modeling has suggested boron-rich boron carbide (B13C2) may be a better performing material than the commonly used B4C due to the elimination of amorphization and an increase in shear strength. Therefore, a clear experimental understanding of the factors that lead to the degradation of mechanical properties as well as the effects of chemistry changes in boron carbide is needed. For this reason, the goal of this thesis was to produce high purity boron carbide with varying stoichiometries for chemical and mechanical property characterization. Utilizing rapid carbothermal reduction and pressure assisted sintering, dense boron carbides with varying stoichiometries were produced. Microstructural characteristics such as impurity inclusions, porosity and grain size were controlled. The chemistry and common static mechanical properties that are of importance to superhard materials including elastic moduli, hardness and fracture toughness of the resulting boron-rich boron carbides were characterized. A series of six boron carbide samples were processed with varying amounts of amorphous boron (up to 45 wt. % amorphous boron). Samples with greater than 40 wt.% boron additions were shown to exhibit abnormal sintering behavior, making it difficult to characterize these samples. Near theoretical densities were achieved in samples with less than 40 wt. % amorphous boron additions. X-ray diffraction analysis revealed the samples to be phase pure and boron-rich. Carbon content was determined to be at or near expected values with exception of samples with greater than 40 wt. % amorphous boron additions. Raman microspectroscopy further confirmed the changes in chemistry as well as revealed the chemical homogeneity of the samples. Microstructural analysis carried out using both optical and electron imaging showed clean and consistent microstructures. The changes in the chemistry of the boron carbide samples has been shown to significantly affect the static mechanical properties. Ultrasonic wave speed measurements were used to calculate the elastic moduli which showed a clear decrease in the Young's and shear moduli with a slight increase in bulk modulus. Berkovich nano-indentation revealed a similar trend, as the hardness and fracture toughness of the material decreased with decreasing carbon content. Amorphization within 1 kg Knoop indents was shown to diminish in intensity and extent as carbon content decreased, signifying a mechanism for amorphization mitigation.

Boron exposure assessment using drinking water and urine in the North of Chile.

PubMed

Cortes, S; Reynaga-Delgado, E; Sancha, A M; Ferreccio, C

2011-12-01

Boron is an essential trace element for plants and humans however it is still an open question what levels of boron are actually safe for humans. This study, conducted between 2006 and 2010, measured exposure levels of boron in drinking water and urine of volunteers in Arica, an area in the North of Chile with high levels of naturally occurring boron. Samples were taken of tap and bottled water (173 and 22, respectively), as well as urine from 22 volunteers, and subsequently analyzed by inductively coupled plasma spectroscopy (ICP-OES). Boron varied in public tap water from 0.22 to 11.3mgL(-1), with a median value of 2.9mgL(-1), while concentrations of boron in bottled water varied from 0.01 to 12.2mgL(-1). Neither tap nor bottled water samples had concentrations of boron within WHO recommended limits. The concentration of boron in urine varied between 0.45 and 17.4mgL(-1), with a median of 4.28mgL(-1) and was found to be correlated with tap water sampled from the homes of the volunteers (r=0.64). Authors highly recommend that in northern Chile - where levels of boron are naturally high - that the tap and bottled water supplies be monitored in order to protect public health and that regulatory standards also be established for boron in drinking water in order to limit exposure. Copyright © 2011 Elsevier B.V. All rights reserved.

The Importance of Slag Structure to Boron Removal from Silicon during the Refining Process: Insights from Raman and Nuclear Magnetic Resonance Spectroscopy Study

NASA Astrophysics Data System (ADS)

Qian, Guoyu; Wang, Zhi; Gong, Xuzhong; Sun, Liyuan

2017-12-01

Slag structure plays an important role in determining the relative ease of boron removal from silicon. Correlation between slag structure and boron removal thermodynamics was experimentally studied by Raman and nuclear magnetic resonance (NMR) spectroscopy using CaO-SiO2-Na2O slags with different optical basicities (0.6 to 0.71). Optimization of slag depolymerization leads to efficient removal of boron. The extent of nonbridged oxygen content (NBO/T) and boron removal gradually increased with an increase in optical basicity from 0.6 to 0.66: B2O3 derived from boron oxidation captured nonbridging oxygens of Q 0(Si), Q 1(Si), and Q 2(Si), and was incorporated into the silicate network in the form of Q 3(Si and B). When optical basicity increased to 0.71, NBO/T rapidly increased and boron removal decreased considerably. Quick depolymerization of Q 3(Si and B) deteriorated the stability of boron. Various structural forms of boron in the silicate network were successfully detected: the BO3 trihedrons [3]B-3Si, [3]B-2Si-1NBO, and BO3 (nonring), and the BO4 tetrahedrons BO4 (1B, 3Si) and BO4 (0B, 4Si). BO4 (1B, 3Si) was the main structure contributing to the increase of boron capacity; BO3 (nonring), detected under higher optical basicity conditions, may cause deterioration of boron removal by suppressing its oxidation.

Synthesis and thermoelectric properties of CoP(sub 3)

NASA Technical Reports Server (NTRS)

Shields, V. B.; Caillet, T.

2002-01-01

In an effort to expand the range of operation for highly efficient, segmented thermoelectric unicouples currently being developed at JPL, skutterudite phosphides are being investigated as potential high temperature segments to supplement antimonide segments that limit the use of these unicouples at a hot-side temperature of about 873-973 K.

CYTOGENETIC EFFECTS OF PHOSPHINE INHALATION BY RODENTS

EPA Science Inventory

Phosphine (PH3) is a highly toxic grain fumigant that can be produced from the reaction of metal phosphides with water. o determine the in vivo cytogenetic effects of inhalation of PH3, male CD-1 mice were exposed to either 0, 5, 10, or 15 ppm target concentrations of PH3 for 6 h...

An economic analysis of black-tailed prairie dog (Cynomys ludovicianus) control

Treesearch

Alan R. Collins; John P. Workman; Daniel W. Uresk

1984-01-01

Black-tailed prairie dog (Cynomys ludovicianus) control by poisoning with zinc phosphide was not economically feasible in the Conata Basin of South Dakota. Economic analyses were conducted from U.S. Forest Service and rancher viewpoints. Control programs were analyzed with annual maintenance or complete retreatment of initially treated areas to...

Demography of black-tailed prairie dog populations reoccupying sites treated with rodenticide

Treesearch

R. P. Cincotta; Daniel W. Uresk; R. M. Hansen

1987-01-01

A rodenticide, zinc phosphide, was applied to remove black-tailed prairie dogs (Cynomys ludovicianus) from 6 haofa prairie dog colony in southwestern South Dakota. Another adjacent 6 ha was left untreated. The removal experiment was repeated two consecutive years. Contingency table analysis showed that the resultant population was not homogeneous;...

Intense Femtosecond Laser-Mediated Electrical Discharge Enables Preparation of Amorphous Nickel Phosphide Nanoparticles.

PubMed

Ma, Zhuo-Chen; Chen, Qi-Dai; Han, Bing; Li, He-Long; Wang, Lei; Zhang, Yong-Lai; Sun, Hong-Bo

2018-05-09

Reported here is a high-efficiency preparation method of amorphous nickel phosphide (Ni-P) nanoparticles by intense femtosecond laser irradiation of nickel sulfate and sodium hypophosphite aqueous solution. The underlying mechanism of the laser-assisted preparation was discussed in terms of the breaking of chemical bond in reactants via highly intense electric field discharge generated by the intense femtosecond laser. The morphology and size of the nanoparticles can be tuned by varying the reaction parameters such as ion concentration, ion molar ratio, laser power, and irradiation time. X-ray diffraction and transmission electron microscopy results demonstrated that the nanoparticles were amorphous. Finally, the thermogravimetric-differential thermal analysis experiment verified that the as-synthesized noncrystalline Ni-P nanoparticles had an excellent catalytic capability toward thermal decomposition of ammonium perchlorate. This strategy of laser-mediated electrical discharge under such an extremely intense field may create new opportunities for the decomposition of molecules or chemical bonds that could further facilitate the recombination of new atoms or chemical groups, thus bringing about new possibilities for chemical reaction initiation and nanomaterial synthesis that may not be realized under normal conditions.

New Intermetallic Ternary Phosphide Chalcogenide AP2-xXx (A = Zr, Hf; X = S, Se) Superconductors with PbFCl-Type Crystal Structure

NASA Astrophysics Data System (ADS)

Kitô, Hijiri; Yanagi, Yousuke; Ishida, Shigeyuki; Oka, Kunihiko; Gotoh, Yoshito; Fujihisa, Hiroshi; Yoshida, Yoshiyuki; Iyo, Akira; Eisaki, Hiroshi

2014-07-01

We have synthesized a series of intermetallic ternary phosphide chalcogenide superconductors, AP2-xXx (A = Zr, Hf; X = S, Se), using the high-pressure synthesis technique. These materials have a PbFCl-type crystal structure (space group P4/nmm) when x is greater than 0.3. The superconducting transition temperature Tc changes systematically with x, yielding dome-like phase diagrams. The maximum Tc is achieved at approximately x = 0.7, at which point the Tc is 6.3 K for ZrP2-xSex (x = 0.75), 5.5 K for HfP2-xSex (x = 0.7), 5.0 K for ZrP2-xSx (x = 0.675), and 4.6 K for Hfp2-xSx (x = 0.5). They are typical type-II superconductors and the upper and lower critical fields are estimated to be 2.92 T at 0 K and 0.021 T at 2 K for ZrP2-xSex (x = 0.75), respectively.

Vertically Emitting Indium Phosphide Nanowire Lasers.

PubMed

Xu, Wei-Zong; Ren, Fang-Fang; Jevtics, Dimitars; Hurtado, Antonio; Li, Li; Gao, Qian; Ye, Jiandong; Wang, Fan; Guilhabert, Benoit; Fu, Lan; Lu, Hai; Zhang, Rong; Tan, Hark Hoe; Dawson, Martin D; Jagadish, Chennupati

2018-06-13

Semiconductor nanowire (NW) lasers have attracted considerable research effort given their excellent promise for nanoscale photonic sources. However, NW lasers currently exhibit poor directionality and high threshold gain, issues critically limiting their prospects for on-chip light sources with extremely reduced footprint and efficient power consumption. Here, we propose a new design and experimentally demonstrate a vertically emitting indium phosphide (InP) NW laser structure showing high emission directionality and reduced energy requirements for operation. The structure of the laser combines an InP NW integrated in a cat's eye (CE) antenna. Thanks to the antenna guidance with broken asymmetry, strong focusing ability, and high Q-factor, the designed InP CE-NW lasers exhibit a higher degree of polarization, narrower emission angle, enhanced internal quantum efficiency, and reduced lasing threshold. Hence, this NW laser-antenna system provides a very promising approach toward the achievement of high-performance nanoscale lasers, with excellent prospects for use as highly localized light sources in present and future integrated nanophotonics systems for applications in advanced sensing, high-resolution imaging, and quantum communications.

Isoelectronic Traps in Gallium Phosphide

NASA Astrophysics Data System (ADS)

Christian, Theresa; Alberi, Kirstin; Beaton, Daniel; Fluegel, Brian; Mascarenhas, Angelo

2015-03-01

Isoelectronic substitutional dopants can result in strongly localized exciton traps within a host bandstructure such as gallium arsenide (GaAs) or gallium phosphide (GaP). These traps have received great attention for their role in the anomalous bandgap bowing of nitrogen or bismuth-doped GaAs, creating the dramatic bandgap tunability of these unusual dilute alloys. In the wider, indirect-bandgap host material GaP, these same isoelectronic dopants create bound states within the gap that can have very high radiative efficiency and a wealth of discrete spectral transitions illuminating the symmetry of the localized excitonic trap state. We will present a comparative study of nitrogen and bismuth isoelectronic traps in GaP. Research was supported by the U. S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division under contract DE-AC36-08GO28308 and by the Department of Energy Office of Science Graduate Fellowship Program (DOE SCGF), made possible in part by the American Recovery and Reinvestment Act of 2009, administered by ORISE-ORAU under contract no. DE-AC05-06OR23100.

Hydrazine-Assisted Formation of Indium Phosphide (InP)-Based Nanowires and Core-Shell Composites

PubMed Central

Patzke, Greta R.; Kontic, Roman; Shiolashvili, Zeinab; Makhatadze, Nino; Jishiashvili, David

2012-01-01

Indium phosphide nanowires (InP NWs) are accessible at 440 °C from a novel vapor phase deposition approach from crystalline InP sources in hydrazine atmospheres containing 3 mol % H2O. Uniform zinc blende (ZB) InP NWs with diameters around 20 nm and lengths up to several tens of micrometers are preferably deposited on Si substrates. InP particle sizes further increase with the deposition temperature. The straightforward protocol was extended on the one-step formation of new core-shell InP–Ga NWs from mixed InP/Ga source materials. Composite nanocables with diameters below 20 nm and shells of amorphous gallium oxide are obtained at low deposition temperatures around 350 °C. Furthermore, InP/Zn sources afford InP NWs with amorphous Zn/P/O-coatings at slightly higher temperatures (400 °C) from analogous setups. At 450 °C, the smooth outer layer of InP-Zn NWs is transformed into bead-shaped coatings. The novel combinations of the key semiconductor InP with isotropic insulator shell materials open up interesting application perspectives in nanoelectronics. PMID:28809296

Forward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells

NASA Technical Reports Server (NTRS)

Michael, Sherif; Cypranowski, Corinne; Anspaugh, Bruce

1990-01-01

The preliminary results of a novel approach to low-temperature annealing of previously irradiated indium phosphide and gallium arsenide solar cells are reported. The technique is based on forward-biased current annealing. The two types of III-V solar cells were irradiated with 1-MeV electrons to a fluence level of (1-10) x 10 to the 14th electrons/sq cm. Several annealing attempts were made, varying all conditions. Optimum annealing was achieved when cells were injected with minority currents at a constant 90 C. The current density for each type of cell was also determined. Significant recovery of degraded parameters was achieved in both cases. However, the InP cell recovery notably exceeded the recovery in GaAs cells. The recovery is thought to be caused by current-stimulated reordering of the radiator-induced displacement damage. Both types of cell were then subjected to several cycles of irradiation and annealing. The results were also very promising. The significant recovery of degraded cell parameters at low temperature might play a major role in considerably extending the end of life of future spacecraft.

A review of episodes of zinc phosphide toxicosis in wild geese (Branta spp.) in Oregon (2004−2011)

USGS Publications Warehouse

Bildfell, Rob J.; Rumbeiha, Wilson K.; Schuler, Krysten L.; Meteyer, Carol U.; Wolff, Peregrine L.; Gillin, Colin M.

2013-01-01

Epizootic mortality in several geese species, including cackling geese (Branta hutchinsii) and Canada geese (Branta canadensis), has been recognized in the Willamette Valley of Oregon for over a decade. Birds are generally found dead on a body of water or are occasionally observed displaying neurologic clinical signs such as an inability to raise or control the head prior to death. Investigation of these epizootic mortality events has revealed the etiology to be accidental poisoning with the rodenticide zinc phosphide (Zn3P2). Gross and histologic changes are restricted to acute pulmonary congestion and edema, sometimes accompanied by distension of the upper alimentary tract by fresh grass. Geese are unusually susceptible to this pesticide; when combined with an epidemiologic confluence of depredation of specific agricultural crops by rodents and seasonal avian migration pathways, epizootic toxicosis may occur. Diagnosis requires a high index of suspicion, appropriate sample collection and handling, plus specific test calibration for this toxicant. Interagency cooperation, education of farmers regarding pesticide use, and enforcement of regulations has been successful in greatly decreasing these mortality events since 2009.

Cobalt Phosphide Hollow Polyhedron as Efficient Bifunctional Electrocatalysts for the Evolution Reaction of Hydrogen and Oxygen.

PubMed

Liu, Mengjia; Li, Jinghong

2016-01-27

The development of efficient and low-cost hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) electrocatalysts for renewable-energy conversion techniques is highly desired. A kind of hollow polyhedral cobalt phosphide (CoP hollow polyhedron) is developed as efficient bifunctional electrocatalysts for HER and OER templated by Co-centered metal-organic frameworks. The as-prepared CoP hollow polyhedron, which have large specific surface area and high porosity providing rich catalytic active sites, show excellent electrocatalytic performances for both HER and OER in acidic and alkaline media, respectively, with onset overpotentials of 35 and 300 mV, Tafel slopes of 59 and 57 mV dec(-1), and a current density of 10 mA cm(-2) at overpotentials of 159 and 400 mV for HER and OER, respectively, which are remarkably superior to those of particulate CoP (CoP particles) and comparable to those of commercial noble-metal catalysts. In addition, the CoP hollow polyhedron also show good durability after long-term operations.

First principle study of electronic nanoscale structure of In x Ga1- x P with variable size, shape and alloying percentage

NASA Astrophysics Data System (ADS)

Hussein, M. T.; Kasim, T.; Abdulsattar, M. A.

2013-11-01

In present work, we investigate electronic properties of alloying percentage of In x Ga1- x P compound with different sizes of superlattice large unit cell (LUC) method with 8, 16, 54, and 64 nanocrystals core atoms. The size and type of alloying compound are varied so that it can be tuned to a required application. To determine properties of indium gallium phosphide nanocrystals density functional theory at the generalized-gradient approximation level coupled with LUC method is used to simulate electronic structure of zinc blende indium gallium phosphide nanocrystals that have dimensions around 2-2.8 nm. The calculated properties include lattice constant, energy gap, valence band width, cohesive energy, density of states (DOS) etc. Results show that laws that are applied at microscale alloying percentage are no more applicable at the present nanoscale. Results also show that size, shape and quantum effects are strong. Many properties fluctuate at nanoscale while others converge to definite values. DOS summarizes many of the above quantities.

Synthesis of indium phosphide nanocrystals by sonochemical method and survey of optical properties

NASA Astrophysics Data System (ADS)

Trung, Ho Minh; Duy Thien, Nguyen; Van Vu, Le; Long, Nguyen Ngoc; Hieu, Truong Kim

2013-10-01

Indium phosphide semiconductor materials (InP) have various applications in the field of semiconductor optoelectronics because of its advantages. But the making of this material is difficult due to the very weak chemical activity of In element. In this report we present a simple method to synthesize InP nanocrystals from inorganic precursors such as indium chloride (InCl3), yellow phosphorus (P4), reduction agent NaBH4 at low temperature with the aid of ultrasound. Structural, morphological and optical properties of the formed InP nanocrystals were examined by transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersed X-ray analysis (EDS), Raman scattering, absorption and photoluminscence (PL) spectroscopy. After the surface treatment of InP nanocrystals with liquid hydrofluoric (HF) acid, the luminescence spectra have an enhanced intensity and consist of the peaks in the region from 500 nm to 700 nm. The intensity of these peaks strongly depends on the concentration and etching time of HF. International Workshop on Advanced Materials and Nanotechnology 2012 (IWAMN 2012).

Heterogeneous Bimetallic Phosphide/Sulfide Nanocomposite for Efficient Solar-Energy-Driven Overall Water Splitting.

PubMed

Xin, Yanmei; Kan, Xiang; Gan, Li-Yong; Zhang, Zhonghai

2017-10-24

Solar-driven overall water splitting is highly desirable for hydrogen generation with sustainable energy sources, which need efficient, earth-abundant, robust, and bifunctional electrocatalysts for both oxygen evolution reaction (OER) and hydrogen evolution reaction (HER). Herein, we propose a heterogeneous bimetallic phosphide/sulfide nanocomposite electrocatalyst of NiFeSP on nickel foam (NiFeSP/NF), which shows superior electrocatalytic activity of low overpotentials of 91 mV at -10 mA cm -2 for HER and of 240 mV at 50 mA cm -2 for OER in 1 M KOH solution. In addition, the NiFeSP/NF presents excellent overall water splitting performance with a cell voltage as low as 1.58 V at a current density of 10 mA cm -2 . Combining with a photovoltaic device of a Si solar cell or integrating into photoelectrochemical (PEC) systems, the bifunctional NiFeSP/NF electrocatalyst implements unassisted solar-driven water splitting with a solar-to-hydrogen conversion efficiency of ∼9.2% and significantly enhanced PEC performance, respectively.

Hydrazine-Assisted Formation of Indium Phosphide (InP)-Based Nanowires and Core-Shell Composites.

PubMed

Patzke, Greta R; Kontic, Roman; Shiolashvili, Zeinab; Makhatadze, Nino; Jishiashvili, David

2012-12-27

Indium phosphide nanowires (InP NWs) are accessible at 440 °C from a novel vapor phase deposition approach from crystalline InP sources in hydrazine atmospheres containing 3 mol % H₂O. Uniform zinc blende (ZB) InP NWs with diameters around 20 nm and lengths up to several tens of micrometers are preferably deposited on Si substrates. InP particle sizes further increase with the deposition temperature. The straightforward protocol was extended on the one-step formation of new core-shell InP-Ga NWs from mixed InP/Ga source materials. Composite nanocables with diameters below 20 nm and shells of amorphous gallium oxide are obtained at low deposition temperatures around 350 °C. Furthermore, InP/Zn sources afford InP NWs with amorphous Zn/P/O-coatings at slightly higher temperatures (400 °C) from analogous setups. At 450 °C, the smooth outer layer of InP-Zn NWs is transformed into bead-shaped coatings. The novel combinations of the key semiconductor InP with isotropic insulator shell materials open up interesting application perspectives in nanoelectronics.

Dilute phosphide nitride materials as photocathodes for electrochemical solar energy conversion

NASA Astrophysics Data System (ADS)

Parameshwaran, Vijay; Xu, Xiaoqing; Kang, Yangsen; Harris, James; Wong, H.-S. Philip; Clemens, Bruce

2013-03-01

Dilute nitride materials have been used in a variety of III-V photonic devices, but have not been significantly explored in photoelectrochemical applications. This work focuses on using dilute phosphide nitride materials of the form (Al,In)P1-xNx as photocathodes for the generation of hydrogen fuel from solar energy. Heteroepitaxial MOCVD growth of AlPN thin films on GaP yields high quality material with a direct bandgap energy of 2.218 eV. Aligned epitaxial growth of InP and GaP nanowires on InP and Si substrates, respectively, provides a template for designing nanostructured photocathodes over a large area. Electrochemical testing of a AlPN/GaP heterostructure electrode yields up to a sixfold increase in photocurrent enhancement under blue light illumination as compared to a GaP electrode. Additionally, the AlPN/GaP electrodes exhibit no degradation in performance after galvanostatic biasing over time. These results show that (Al,In)P1-xNx is a promising materials system for use in nanoscale photocathode structures.

Recent progress in boron nanomaterials

PubMed Central

Kondo, Takahiro

2017-01-01

Abstract Various types of zero, one, and two-dimensional boron nanomaterials such as nanoclusters, nanowires, nanotubes, nanobelts, nanoribbons, nanosheets, and monolayer crystalline sheets named borophene have been experimentally synthesized and identified in the last 20 years. Owing to their low dimensionality, boron nanomaterials have different bonding configurations from those of three-dimensional bulk boron crystals composed of icosahedra or icosahedral fragments. The resulting intriguing physical and chemical properties of boron nanomaterials are fascinating from the viewpoint of material science. Moreover, the wide variety of boron nanomaterials themselves could be the building blocks for combining with other existing nanomaterials, molecules, atoms, and/or ions to design and create materials with new functionalities and properties. Here, the progress of the boron nanomaterials is reviewed and perspectives and future directions are described. PMID:29152014

Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

NASA Technical Reports Server (NTRS)

Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

1993-01-01

Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

Transcriptomic analysis of boron hyperaccumulation mechanisms in Puccinellia distans.

PubMed

Öztürk, Saniye Elvan; Göktay, Mehmet; Has, Canan; Babaoğlu, Mehmet; Allmer, Jens; Doğanlar, Sami; Frary, Anne

2018-05-01

Puccinellia distans, common alkali grass, is found throughout the world and can survive in soils with boron concentrations that are lethal for other plant species. Indeed, P. distans accumulates very high levels of this element. Despite these interesting features, very little research has been performed to elucidate the boron tolerance mechanism in this species. In this study, P. distans samples were treated for three weeks with normal (0.5 mg L -1 ) and elevated (500 mg L -1 ) boron levels in hydroponic solution. Expressed sequence tags (ESTs) derived from shoot tissue were analyzed by RNA sequencing to identify genes up and down-regulated under boron stress. In this way, 3312 differentially expressed transcripts were detected, 67.7% of which were up-regulated and 32.3% of which were down-regulated in boron-treated plants. To partially confirm the RNA sequencing results, 32 randomly selected transcripts were analyzed for their expression levels in boron-treated plants. The results agreed with the expected direction of change (up or down-regulation). A total of 1652 transcripts had homologs in A. thaliana and/or O. sativa and mapped to 1107 different proteins. Functional annotation of these proteins indicated that the boron tolerance and hyperaccumulation mechanisms of P. distans involve many transcriptomic changes including: alterations in the malate pathway, changes in cell wall components that may allow sequestration of excess boron without toxic effects, and increased expression of at least one putative boron transporter and two putative aquaporins. Elucidation of the boron accumulation mechanism is important in developing approaches for bioremediation of boron contaminated soils. Copyright © 2018 Elsevier Ltd. All rights reserved.

OsNIP3;1, a rice boric acid channel, regulates boron distribution and is essential for growth under boron-deficient conditions.

PubMed

Hanaoka, Hideki; Uraguchi, Shimpei; Takano, Junpei; Tanaka, Mayuki; Fujiwara, Toru

2014-06-01

Boron is an essential micronutrient for higher plants. Boron deficiency is an important agricultural issue because it results in loss of yield quality and/or quantity in cereals and other crops. To understand boron transport mechanisms in cereals, we characterized OsNIP3;1, a member of the major intrinsic protein family in rice (Oryza sativa L.), because OsNIP3;1 is the most similar rice gene to the Arabidopsis thaliana boric acid channel genes AtNIP5;1 and AtNIP6;1. Yeast cells expressing OsNIP3;1 imported more boric acid than control cells. GFP-tagged OsNIP3;1 expressed in tobacco BY2 cells was localized to the plasma membrane. The accumulation of OsNIP3;1 transcript increased fivefold in roots within 6 h of the onset of boron starvation, but not in shoots. Promoter-GUS analysis suggested that OsNIP3;1 is expressed mainly in exodermal cells and steles in roots, as well as in cells around the vascular bundles in leaf sheaths and pericycle cells around the xylem in leaf blades. The growth of OsNIP3;1 RNAi plants was impaired under boron limitation. These results indicate that OsNIP3;1 functions as a boric acid channel, and is required for acclimation to boron limitation. Boron distribution among shoot tissues was altered in OsNIP3;1 knockdown plants, especially under boron-deficient conditions. This result demonstrates that OsNIP3;1 regulates boron distribution among shoot tissues, and that the correct boron distribution is crucial for plant growth. © 2014 The Authors The Plant Journal © 2014 John Wiley & Sons Ltd.

Processing and characterization of boron carbide-hafnium diboride ceramics

NASA Astrophysics Data System (ADS)

Brown-Shaklee, Harlan James

Hafnium diboride based ceramics are promising candidate materials for advanced aerospace and nuclear reactor components. The effectiveness of boron carbide and carbon as HfB2 sintering additives was systematically evaluated. In the first stage of the research, boron carbide and carbon additives were found to improve the densification behavior of milled HfB2 powder in part by removing oxides at the HfB2 surface during processing. Boron carbide additives reduced the hot pressing temperature of HfB2 by 150°C compared to carbon, which reduced the hot pressing temperature by ˜50°C. Reduction of oxide impurities alone could not explain the difference in sintering enhancement, however, and other mechanisms of enhancement were evaluated. Boron carbides throughout the homogeneity range were characterized to understand other mechanisms of sintering enhancement in HfB2. Heavily faulted carbon rich and boron rich boron carbides were synthesized for addition to HfB2. The greatest enhancement to densification was observed in samples containing boron- and carbon-rich compositions whereas B6.5 C provided the least enhancement to densification. It is proposed that carbon rich and boron rich boron carbides create boron and hafnium point defects in HfB2, respectively, which facilitate densification. Evaluation of the thermal conductivity (kth) between room temperature and 2000°C suggested that the stoichiometry of the boron carbide additives did not significantly affect kth of HfB2-BxC composites. The improved sinterability and the high kth (˜110 W/m-K at 300K and ˜90 W/m-K at 1000°C ) of HfB2-BxC ceramics make them excellent candidates for isotopically enriched reactor control materials.

Selective boron delivery to murine tumors by lipophilic species incorporated in the membranes of unilamellar liposomes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feakes, D.A.; Shelly, K.; Hawthorne, M.F.

1995-02-28

The nido-carborane species K[nido-7-CH{sub 3}(CH{sub 2}){sub 15}-7,8-C{sub 2}B{sub 9}H{sub 11}] has been synthesized for use as an addend for the bilayer membrane of liposomes. Small unilamellar vesicles, composed of distearoylphosphatidylcholine/cholesterol, 1:1, and incorporating K[nido-7-CH{sub 3}(CH{sub 2}){sub 15}-7,8-C{sub 2}B{sub 9}H{sub 11}] in the bilayer, have been investigated in vivo. The time-course biodistribution of boron delivered by these liposomes was determined by inductively coupled plasma-atomic emission spectroscopy analyses after the injection of liposomal suspensions in BALB/c mice bearing EMT6 mammary adenocarcinomas. At the low injected doses normally used ({approx}5-10 mg of boron per kg of body weight), peak tumor boron concentrations ofmore » {approx}35 {mu}g of boron per g of tissue and tumor/blood boron ratios of {approx}8 were achieved. These values are sufficiently high for the successful application of boron neutron capture therapy. The bilayer-embedded boron compound may provide the sole boron source or, alternatively, a concentrated aqueous solution of a hydrophilic boron compound may also be encapsulated within the liposomes to provide a dose enhancement. Thus, the incorporation of both K[nido-7-CH{sub 3}(CH{sub 2}){sub 15}-7,8-C{sub 2}B{sub 9}H{sub 11}] and the hydrophilic species, Na{sub 3}[1-(2{prime}-B{sub 10}H{sub 9})-2-NH{sub 3}B{sub 10}H{sub 8}], within the same liposomes demonstrated significantly enhanced biodistribution characteristics, exemplified by maximum tumor boron concentrations of {approx} 50 {mu}g of boron per g of tissue and tumor/blood boron ratios of {approx} 6. 18 refs., 1 fig.« less

Boron isotopes at the catchment scale, a new potential tool to infer critical zone processes.

NASA Astrophysics Data System (ADS)

Gaillardet, J.; Noireaux, J.; Braun, J. J.; Riotte, J.; Louvat, P.; Bouchez, J.; Lemarchand, D.; Muddu, S.; Mohan Kumar, M.; Candaudap, F.

2017-12-01

Boron is a mid-mass element that has two isotopes, 10B and 11B. These isotopes are largely fractioned by a number of chemical, biological and physical processes. Boron as a great affinity for clays and is useful for life, making it a double tracer of critical zone processes. This study focuses on the Mule Hole Critical Zone Observatory in South India. This is part of the French Research Infrastructure OZCAR and has benefited from the fruitful Indo-French collaboration (Indo-French Cell for Water Sciences) for more that 15 years. Boron and its isotopes were measured in the different compartment of the CZ in Mule Hole, vegetation, atmosphere, throughfall, soil, soil water, river water and compared to the behavior of other elements. The well constrained hydrology in Mule Hole allowed us to calculate the main fluxes affecting boron in the Critical Zone and came to the first order conclusion that the recycling of boron by vegetation is by far the most important flux within the system, reaching 15-20 times the catchment outlet flux. From an isotopic point of view, the total range of variation is measured between -3 ‰ and 77‰, with a bedrock value at 10‰ in classical delta unit, making boron a well suited tracer for constraining CZ processes. The flux of boron most enriched in heavy boron is the throughfall, showing the importance of biological processes in controlling the boron isotopic composition of the stream. Boron in soils in depleted in the heavy isotope but is enriched in boron compared to the bedrock, a surprising situation that we interpret as the legacy of a previous stage of transient weathering. These results indicate a strong decoupling between the behaviors of boron at the surface of the CZ and at depth.

Growth and characterization of boron doped graphene by Hot Filament Chemical Vapor Deposition Technique (HFCVD)

NASA Astrophysics Data System (ADS)

Jafari, A.; Ghoranneviss, M.; Salar Elahi, A.

2016-03-01

Large-area boron doped graphene was synthesized on Cu foil (as a catalyst) by Hot Filament Chemical Vapor Deposition (HFCVD) using boron oxide powder and ethanol vapor. To investigate the effect of different boron percentages, grow time and the growth mechanism of boron-doped graphene, scanning electron microscopy (SEM), Raman scattering and X-ray photoelectron spectroscopy (XPS) were applied. Also in this experiment, the I-V characteristic carried out for study of electrical property of graphene with keithley 2361 system. Nucleation of graphene domains with an average domain size of ~20 μm was observed when the growth time is 9 min that has full covered on the Cu surface. The Raman spectroscopy show that the frequency of the 2D band down-shifts with B doping, consistent with the increase of the in-plane lattice constant, and a weakening of the B-C in-plane bond strength relative to that of C-C bond. Also the shifts of the G-band frequencies can be interpreted in terms of the size of the C-C ring and the changes in the electronic structure of graphene in the presence of boron atoms. The study of electrical property shows that by increasing the grow time the conductance increases which this result in agree with SEM images and graphene grain boundary. Also by increasing the boron percentage in gas mixer the conductance decreases since doping graphene with boron creates a band-gap in graphene band structure. The XPS results of B doped graphene confirm the existence of boron in doped graphene, which indicates the boron atoms doped in the graphene lattice are mainly in the form of BC3. The results showed that boron-doped graphene can be successfully synthesized using boron oxide powder and ethanol vapor via a HFCVD method and also chemical boron doping can be change the electrical conductivity of the graphene.

An improved procedure for separation/purification of boron from complex matrices and high-precision measurement of boron isotopes by positive thermal ionization and multicollector inductively coupled plasma mass spectrometry.

PubMed

Wei, Hai-Zhen; Jiang, Shao-Yong; Hemming, N Gary; Yang, Jing-Hong; Yang, Tao; Wu, He-Pin; Yang, Tang-Li; Yan, Xiong; Pu, Wei

2014-06-01

In order to eliminate boron loss and potential isotopic fractionation during chemical pretreatment of natural samples with complex matrices, a three-column ion-exchange separation/purification procedure has been modified, which ensures more than 98% recovery of boron from each step for a wide range of sample matrices, and is applicable for boron isotope analysis by both TIMS and MC-ICP-MS. The PTIMS-Cs2BO2(+)-static double collection method was developed, ensuring simultaneous collection of (133)Cs2(11)B(16)O2(+)(m/z 309) and (133)Cs2(10)B(16)O2(+) (m/z 308) ions in adjacent H3-H4 Faraday cups with typical zoom optics parameters (Focus Quad: 15 V, Dispersion Quad: -85 V). The external reproducibilities of the measured (11)B/(10)B ratios of the NIST 951 boron standard solutions of 1000 ng, 100 ng and 10 ng of boron by PTIMS method are ±0.06‰, ±0.16‰ and ±0.25‰, respectively, which indicates excellent precision can be achieved for boron isotope measurement at nanogram level boron in natural samples. An on-peak zero blank correction procedure was employed to correct the residual boron signals effect in MC-ICP-MS, which gives consistent δ(11)B values with a mean of 39.66±0.35‰ for seawater in the whole range of boron content from 5 ppb to 200 ppb, ensuring accurate boron isotope analysis in few ppb boron. With the improved protocol, consistent results between TIMS and MC-ICP-MS data were obtained in typical geological materials within a wide span of δ(11)B values ranging from -25‰ to +40‰. Copyright © 2014 Elsevier B.V. All rights reserved.

Dietary boron: possible roles in human and animal physiology

USDA-ARS?s Scientific Manuscript database

Boron is a bioactive element of low molecular weight. Since discovery of the first boron biomolecule, boromycin, in 1967, several other similar biomolecules are now well-characterized. Most recently described was a bacterial cell-to-cell communication signal that requires boron, autoinducer-II. Boro...

Edge-defined contact heater apparatus and method for floating zone crystal growth

NASA Technical Reports Server (NTRS)

Kou, Sindo (Inventor)

1992-01-01

An apparatus for growing a monocrystalline body (30) from a polycrystalline feed rod (22) includes a heater (20) that is positioned to heat a short section of the polycrystalline rod (22) to create a molten zone (34). The heater (20) is formed to include a shaper (40) that contacts the polycrystalline rod (22) in the molten zone (34) and has a hole (46) to allow flow in the molten zone (34) between the polycrystalline rod (22) side and the monocrystalline body (30) side of the shaper. The shaper (40) has an edge (42) that defines the boundary of the cross-section of the monocrystalline body (30) that is formed as the molten material solidifies.

Properties of vacuum-evaporated boron films

NASA Technical Reports Server (NTRS)

Feakes, F.

1973-01-01

The work on the properties of thin boron films made by vacuum evaporation of elemental boron using an electron beam as the energy source is reported. The program aimed at characterizing the properties of vacuum evaporated films. The work was directed toward those variables considered to be important in affecting the tensile strength of the boron films. In general, the thickness of the films was less than 0.002 in. The temperature of the substrate on which the boron was condensed was found to be most important. Three distinctly different forms of boron deposit were produced. Although the transition temperature was not sharply defined, at substrate temperatures of less than approximately 600 deg C the boron deposits were amorphous to X-ray. If the substrate were highly polished, the deposits were black and mirror-like. For substrates with coefficients of thermal expansion close to that of boron, the deposits were then continuous and uncracked. The studies suggest that the potential continues to exist for film-type composites to have both high strength and high modulus.

Mechanisms implicated in the effects of boron on wound healing.

PubMed

Nzietchueng, Rosine Mayap; Dousset, Brigitte; Franck, Patricia; Benderdour, Mohamed; Nabet, Pierre; Hess, Ketsia

2002-01-01

Recently, we demonstrated that boron modulates the turnover of the extracellular matrix and increases TNFalpha release. In the present study, we used an in vitro test to investigate the direct effect of boron on specific enzymes (elastase, trypsin-like enzymes, collagenase and alkaline phosphatase) implicated in extracellular matrix turnover. Boron decreased the elastase and alkaline phosphatase activity, but had no effect on trypsin and collagenase activities. The effect of boron on the enzyme activities was also tested in fibroblasts considered as an in vivo test. In contrast to the results obtained in vitro, boron enhanced the trypsin-like, collagenase, and cathepsin D activities in fibroblasts. Boron did not modify the generation of free radicals compared to the control and did not seem to act on the intracellular alkaline phosphatase activity, However, as it did enhance phosphorylation, it can be hypothesized that boron may affect living cells via a mediator, which could be TNFalpha whose transduction signal involves a cascade of phosphorylations.

Global transport of light elements boron and carbon in the full-W ASDEX Upgrade

NASA Astrophysics Data System (ADS)

ASDEX Upgrade Team; Hakola, A.; Likonen, J.; Koivuranta, S.; Krieger, K.; Mayer, M.; Neu, R.; Rohde, V.; Sugiyama, K.

2011-08-01

Transport of carbon and boron has been investigated in the full-W ASDEX Upgrade after experimental campaigns with (2008) and without (2007) boronizations. For this purpose, poloidal deposition profiles of the two elements on tungsten and graphite regions of lower-divertor tiles have been determined. Carbon is mainly deposited in the inner divertor - 80-90% of the determined 12C and 13C inventories on W - while boron shows a much more symmetric deposition profile. In the unboronized machine, the boron inventories are a factor of 10 smaller than in the boronized case and result from residual boron atoms left in the torus prior to the 2007 campaign. Both carbon and boron are deposited more efficiently and/or show less erosion on graphite than on tungsten, particularly in the outer divertor. For 13C, the difference is 10-100 in favor of graphite. This is most probably caused by a higher re-erosion from tungsten surfaces.

Controlling the Morphology and Oxidation Resistance of Boron Carbide Synthesized Via Carbothermic Reduction Reaction

NASA Astrophysics Data System (ADS)

Ahmed, Yasser M. Z.; El-Sheikh, Said M.; Ewais, Emad M. M.; Abd-Allah, Asmaa A.; Sayed, Said A.

2017-03-01

Boron carbide powder was synthesized from boric acid and lactose mixtures via easy procedure. Boric acid and lactose solution mixtures were roasted in stainless steel pot at 280 °C for 24 h. Boron carbide was obtained by heating the roasted samples under flowing of industrial argon gas at 1500 °C for 3 h. The amount of borate ester compound in the roasted samples was highly influenced by the boron/carbon ratio in the starting mixtures and plays a versatile role in the produced boron carbide. The high-purity boron carbide powder was produced with a sample composed of lowest boron/carbon ratio of 1:1 without calcination step. Particle morphology was changed from nano-needles like structure of 8-10 nm size with highest carbon ratio mixture to spherical shape of >150 nm size with lowest one. The oxidation resistance performance of boron carbide is highly dependent on the morphology and grain size of the synthesized powder.

X-ray method shows fibers fail during fatigue of boron-epoxy laminates

NASA Technical Reports Server (NTRS)

Roderick, G. L.; Whitcomb, J. D.

1975-01-01

A method proposed for studying progressive fiber fracture in boron-epoxy laminates during fatigue tests is described. It is based on the intensity of X-ray absorption of the tungsten core in the boron filaments as contrasted with that of the boron and epoxy matrix. When the laminate is X-rayed, the image of the tungsten in the born filaments is recorded on a photographic plate. Breaks in the boron laminates can be easily identified by magnifying the photographic plates. The method is suitable for studying broken boron filaments in most matrix materials, and may supply key information for developing realistic fatigue and fracture models.

Biodistribution of the boron carriers boronophenylalanine (BPA) and/or decahydrodecaborate (GB-10) for Boron Neutron Capture Therapy (BNCT) in an experimental model of lung metastases.

PubMed

Trivillin, V A; Garabalino, M A; Colombo, L L; González, S J; Farías, R O; Monti Hughes, A; Pozzi, E C C; Bortolussi, S; Altieri, S; Itoiz, M E; Aromando, R F; Nigg, D W; Schwint, A E

2014-06-01

BNCT was proposed for the treatment of diffuse, non-resectable tumors in the lung. We performed boron biodistribution studies with 5 administration protocols employing the boron carriers BPA and/or GB-10 in an experimental model of disseminated lung metastases in rats. All 5 protocols were non-toxic and showed preferential tumor boron uptake versus lung. Absolute tumor boron concentration values were therapeutically useful (25-76ppm) for 3 protocols. Dosimetric calculations indicate that BNCT at RA-3 would be potentially therapeutic without exceeding radiotolerance in the lung. © 2013 Published by Elsevier Ltd.

Biodistribution of the boron carriers boronophenylalanine (BPA) and/or decahydrodecaborate (GB-10) for Boron Neutron Capture Therapy (BNCT) in an experimental model of lung metastases

DOE Office of Scientific and Technical Information (OSTI.GOV)

D.W. Nigg; Various Others

BNCT was proposed for the treatment of diffuse, non-resectable tumors in the lung. We performed boron biodistribution studies with 5 administration protocols employing the boron carriers BPA and/or GB-10 in an experimental model of disseminated lung metastases in rats. All 5 protocols were non-toxic and showed preferential tumor boron uptake versus lung. Absolute tumor boron concentration values were therapeutically useful (25–76 ppm) for 3 protocols. Dosimetric calculations indicate that BNCT at RA-3 would be potentially therapeutic without exceeding radiotolerance in the lung.

Magnetron sputtered boron films

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1998-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1998-06-16

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

β-Rhombohedral Boron: At the Crossroads of the Chemistry of Boron and the Physics of Frustration [Boron: a frustrated element

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ogitsu, Tadashi; Schwegler, Eric; Galli, Giulia

2013-05-08

In the periodic table boron occupies a peculiar, crossover position: on the first row, it is surrounded by metal forming elements on the left and by non-metals on the right. In addition, it is the only non-metal of the third column. Therefore it is perhaps not surprising that the crystallographic structure and topology of its stable allotrope at room temperature (β-boron) are not shared by any other element, and are extremely complex. The formidable intricacy of β- boron, with interconnecting icosahedra, partially occupied sites, and an unusually large number of atoms per unit cell (more than 300) has been knownmore » for more than 40 years. Nevertheless boron remains the only element purified in significant quantities whose ground state geometry has not been completely determined by experiments. However theoretical progress reported in the last decade has shed light on numerous properties of elemental boron, leading to a thorough characterization of its structure at ambient conditions, as well as of its electronic and thermodynamic properties. This review discusses in detail the properties of β-boron, as inferred from experiments and the ab-initio theories developed in the last decade.« less

Boron removal and its concentration in aqueous solution through progressive freeze concentration.

PubMed

Wang, Li Pang

2017-09-01

This study explored the feasibility of progressive freeze concentration in boron removal and its concentration in aqueous solution. The influence of three key parameters in progressive freeze concentration on boron removal and concentration, namely, the advance speed of the ice front, the circumferential velocity of the stirrer, and the initial boron concentration, are investigated by conducting batch experiments. The results show that the effectiveness of boron removal increases with a lower advance speed of the ice front, a higher circumferential velocity of the stirrer, and a lower initial boron concentration. For a model boron solution with an initial concentration of 100 mg/L, the boron concentration in the ice phase after progressive freeze concentration is below 1 mg/L when the advance speed of the ice front is lower than 1 cm/h and the circumferential velocity of the stirrer is higher than 0.12 m/s. In addition, the concentration of boron in the liquid phase occurs simultaneously with progressive freeze concentration. Furthermore, the results also suggest that this method can be applied to the purification and concentration of not only organic molecules but also inorganic ions.

Morphological transformations of BNCO nanomaterials: Role of intermediates

NASA Astrophysics Data System (ADS)

Wang, B. B.; Qu, X. L.; Zhu, M. K.; Levchenko, I.; Baranov, O.; Zhong, X. X.; Xu, S.; Ostrikov, K.

2018-06-01

Highly controllable structural transformation of various doped carbon and boron nitride nanomaterials have been achieved with the perspective of their application in microelectronics, optoelectronics, energy devices and catalytic reactions. Specifically, the syntheses of one-dimensional (1D) boron and nitrogen co-doped tube-like carbon nanorods and 2D vertical carbon and oxygen co-doped boron nitride nanosheets on silicon coated with gold films in N2-H2 plasma was demonstrated. During the synthesis of nanomaterials, boron carbide was used as carbon and boron sources. The results of characterizations by scanning and transmission electron microscopes, as well as micro-Raman and X-ray photoelectron spectroscopes indicate that the formation of different nanomaterials relates to the growth temperature and quantity of boron carbide. Specifically, 1D tube-like carbon nanorods doped with boron and nitrogen are formed at ∼910 °C using a small quantity of boron carbide, while 2D vertical boron nitride nanosheets doped with carbon and oxygen are grown at ∼870 °C using a large quantity of boron carbide. These studies indicate that the behaviors of a reactive intermediate product B2O3 on surfaces of Au nanoparticles play an important role in the formation of different nanomaterials, i.e., whether the B2O3 molecules deposited on Au nanoparticles are desorbed mainly determines the formation of different nanomaterials. The formation of 2D vertical carbon and oxygen co-doped boron nitride nanosheets is related to the high growth rate of edges of nanosheets. Furthermore, the photoluminescence (PL) properties of 1D boron and nitrogen co-doped tube-like carbon nanorods and 2D vertical carbon and oxygen co-doped boron nitride nanosheets were studied at room temperature. The PL results show that all the nanomaterials generate the ultraviolet, blue, green and red PL bands, but the 2D vertical carbon and oxygen co-doped boron nitride nanosheets emit more and stronger PL bands than the 1D boron and nitrogen co-doped tube-like carbon nanorods. The significant differences in the PL properties can be attributed to different carbon structures in these nanomaterials. These achievements can be used to synthesize and control the structures of nanomaterials and contribute to the development of the next generation optoelectronic nanodevices based on 1D and 2D nanomaterials.

The structural and electrical properties of polycrystalline La0.8Ca0.17Ag0.03MnO3 manganites

NASA Astrophysics Data System (ADS)

Ruli, F.; Kurniawan, B.; Imaduddin, A.

2018-04-01

In this paper, the authors report the electrical properties of polycrystalline La0.8Ca0.17Ag0.03MnO3 manganites synthesized using sol-gel method. The X-ray diffraction (XRD) patterns of polycrystalline La0.8Ca0.17Ag0.03MnO3 samples reveal an orthorhombic perovskite structure with Pnma space group. Analysis using energy dispersive X-ray (EDX) confirms that the sample contains all expected chemical elements without any additional impurity. The measurement of resistivity versus temperature using cryogenic magnetometer was performed to investigate the electrical properties. The results show that the electrical resistivity of polycrystalline La0.8Ca0.17Ag0.03MnO3 exhibits metalic behavior below 244 K. The temperature dependence of electrical resistivity dominantly emanates from electron-electron scattering and the grain/domain boundary play a important role in conduction mechanism in polycrystalline La0.8Ca0.17Ag0.03MnO3.

Characterization of polycrystalline materials using synchrotron X-ray imaging and diffraction techniques

NASA Astrophysics Data System (ADS)

Ludwig, W.; King, A.; Herbig, M.; Reischig, P.; Marrow, J.; Babout, L.; Lauridsen, E. M.; Proudhon, H.; Buffière, J. Y.

2010-12-01

The combination of synchrotron radiation x-ray imaging and diffraction techniques offers new possibilities for in-situ observation of deformation and damage mechanisms in the bulk of polycrystalline materials. Minute changes in electron density (i.e., cracks, porosities) can be detected using propagation based phase contrast imaging, a 3-D imaging mode exploiting the coherence properties of third generation synchrotron beams. Furthermore, for some classes of polycrystalline materials, one may use a 3-D variant of x-ray diffraction imaging, termed x-ray diffraction contrast tomography. X-ray diffraction contrast tomography provides access to the 3-D shape, orientation, and elastic strain state of the individual grains from polycrystalline sample volumes containing up to thousand grains. Combining both imaging modalities, one obtains a comprehensive description of the materials microstructure at the micrometer length scale. Repeated observation during (interrupted) mechanical tests provide unprecedented insight into crystallographic and grain microstructure related aspects of polycrystalline deformation and degradation mechanisms.

Macroscopic damping model for structural dynamics with random polycrystalline configurations

NASA Astrophysics Data System (ADS)

Yang, Yantao; Cui, Junzhi; Yu, Yifan; Xiang, Meizhen

2018-06-01

In this paper the macroscopic damping model for dynamical behavior of the structures with random polycrystalline configurations at micro-nano scales is established. First, the global motion equation of a crystal is decomposed into a set of motion equations with independent single degree of freedom (SDOF) along normal discrete modes, and then damping behavior is introduced into each SDOF motion. Through the interpolation of discrete modes, the continuous representation of damping effects for the crystal is obtained. Second, from energy conservation law the expression of the damping coefficient is derived, and the approximate formula of damping coefficient is given. Next, the continuous damping coefficient for polycrystalline cluster is expressed, the continuous dynamical equation with damping term is obtained, and then the concrete damping coefficients for a polycrystalline Cu sample are shown. Finally, by using statistical two-scale homogenization method, the macroscopic homogenized dynamical equation containing damping term for the structures with random polycrystalline configurations at micro-nano scales is set up.

40 CFR Appendix A to Part 68 - Table of Toxic Endpoints

Code of Federal Regulations, 2014 CFR

2014-07-01

... Arsenous trichloride 0.010 7784-42-1 Arsine 0.0019 10294-34-5 Boron trichloride [Borane, trichloro-] 0.010 7637-07-2 Boron trifluoride [Borane, trifluoro-] 0.028 353-42-4 Boron trifluoride compound with methyl ether (1:1) [Boron, trifluoro[oxybis[methane

40 CFR Appendix A to Part 68 - Table of Toxic Endpoints

Code of Federal Regulations, 2013 CFR

2013-07-01

... Arsenous trichloride 0.010 7784-42-1 Arsine 0.0019 10294-34-5 Boron trichloride [Borane, trichloro-] 0.010 7637-07-2 Boron trifluoride [Borane, trifluoro-] 0.028 353-42-4 Boron trifluoride compound with methyl ether (1:1) [Boron, trifluoro[oxybis[methane

40 CFR Appendix A to Part 68 - Table of Toxic Endpoints

Code of Federal Regulations, 2012 CFR

2012-07-01

... Arsenous trichloride 0.010 7784-42-1 Arsine 0.0019 10294-34-5 Boron trichloride [Borane, trichloro-] 0.010 7637-07-2 Boron trifluoride [Borane, trifluoro-] 0.028 353-42-4 Boron trifluoride compound with methyl ether (1:1) [Boron, trifluoro[oxybis[methane

Cobalt Doping of Semiconducting Boron Carbide Using Cobaltocene

DTIC Science & Technology

2007-03-01

COBALT DOPING OF SEMICONDUCTING BORON CARBIDE USING COBALTOCENE THESIS Lonnie Carlson, Major...DOPING OF SEMICONDUCTING BORON CARBIDE USING COBALTOCENE THESIS Presented to the Faculty Department of Engineering Physics Graduate School...DISTRIBUTION UNLIMITED AFIT/GNE/ENP/07-01 COBALT DOPING OF SEMICONDUCTING BORON CARBIDE USING COBALTOCENE Lonnie

Phosphorus-Rich Copper Phosphide Nanowires for Field-Effect Transistors and Lithium-Ion Batteries.

PubMed

Li, Guo-An; Wang, Chiu-Yen; Chang, Wei-Chung; Tuan, Hsing-Yu

2016-09-27

Phosphorus-rich transition metal phosphide CuP2 nanowires were synthesized with high quality and high yield (∼60%) via the supercritical fluid-liquid-solid (SFLS) growth at 410 °C and 10.2 MPa. The obtained CuP2 nanowires have a high aspect ratio and exhibit a single crystal structure of monoclinic CuP2 without any impurity phase. CuP2 nanowires have progressive improvement for semiconductors and energy storages compared with bulk CuP2. Being utilized for back-gate field effect transistor (FET) measurement, CuP2 nanowires possess a p-type behavior intrinsically with an on/off ratio larger than 10(4) and its single nanowire electrical transport property exhibits a hole mobility of 147 cm(2) V(-1) s(-1), representing the example of a CuP2 transistor. In addition, CuP2 nanowires can serve as an appealing anode material for a lithium-ion battery electrode. The discharge capacity remained at 945 mA h g(-1) after 100 cycles, showing a good capacity retention of 88% based on the first discharge capacity. Even at a high rate of 6 C, the electrode still exhibited an outstanding result with a capacity of ∼600 mA h g(-1). Ex-situ transmission electron microscopy and CV tests demonstrate that the stability of capacity retention and remarkable rate capability of the CuP2 nanowires electrode are attributed to the role of the metal phosphide conversion-type lithium storage mechanism. Finally, CuP2 nanowire anodes and LiFePO4 cathodes were assembled into pouch-type lithium batteries offering a capacity over 60 mA h. The full cell shows high capacity and stable capacity retention and can be used as an energy supply to operate electronic devices such as mobile phones and mini 4WD cars.

THE BORON-CURCUMIN COMPLEX IN TRACE BORON DETERMINATIONS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heyes, M.R.; Metcalfe, J.

1963-01-01

A simple and robust method for the formation of the complex of boron with curcumin is described. The sensitivity of the method is 6.6 x 10/sup -5/ g/cm/sup 2/. Formation of the complex is believed to be quantitative under the conditions used and some evidence is given for a 1: 3 boron; curcumin ratio. Methods are outlined for the determination of boron in a number of metals, compounds, and organic materials. (auth)

Methods for boron delivery to mammalian tissue

DOEpatents

Hawthorne, M. Frederick; Feaks, Debra A.; Shelly, Kenneth J.

2003-01-01

Boron neutron capture therapy can be used to destroy tumors. This treatment modality is enhanced by delivering compounds to the tumor site where the compounds have high concentrations of boron, the boron compounds being encapsulated in the bilayer of a liposome or in the bilayer as well as the internal space of the liposomes. Preferred compounds, include carborane units with multiple boron atoms within the carborane cage structure. Liposomes with increased tumor specificity may also be used.

Lipase-catalyzed highly enantioselective kinetic resolution of boron-containing chiral alcohols.

PubMed

Andrade, Leandro H; Barcellos, Thiago

2009-07-16

The first application of enzymes as catalysts to obtain optically pure boron compounds is described. The kinetic resolution of boron-containing chiral alcohols via enantioselective transesterification catalyzed by lipases was studied. Aromatic, allylic, and aliphatic secondary alcohols containing a boronate ester or boronic acid group were resolved by lipase from Candida antartica (CALB), and excellent E values (E > 200) and high enantiomeric excesses (up to >99%) of both remaining substrates and acetylated product were obtained.

Functional characterization of Citrus macrophylla BOR1 as a boron transporter.

PubMed

Cañon, Paola; Aquea, Felipe; Rodríguez-Hoces de la Guardia, Amparo; Arce-Johnson, Patricio

2013-11-01

Plants have evolved to develop an efficient system of boron uptake and transport using a range of efflux carriers named BOR proteins. In this work we isolated and characterized a boron transporter of citrus (Citrus macrophylla), which was named CmBOR1 for its high homology to AtBOR1. CmBOR1 has 4403 bp and 12 exons. Its coding region has 2145 bp and encodes for a protein of 714 amino acids. CmBOR1 possesses the molecular features of BORs such as an anion exchanger domain and the presence of 10 transmembrane domains. Functional analysis in yeast indicated that CmBOR1 has an efflux boron transporter activity, and transformants have increased tolerance to excess boron. CmBOR1 is expressed in leaves, stem and flowers and shows the greatest accumulation in roots. The transcript accumulation was significantly increased under boron deficiency conditions in shoots. In contrast, the accumulation of the transcript did not change in boron toxicity conditions. Finally, we observed that constitutive expression of CmBOR1 was able to increase tolerance to boron deficiency conditions in Arabidopsis thaliana, suggesting that CmBOR1 is a xylem loading boron transporter. Based on these results, it was determined that CmBOR1 encodes a boric acid/borate transporter involved in tolerance to boron deficiency in plants. © 2013 Scandinavian Plant Physiology Society.

The Combined Action of Duplicated Boron Transporters Is Required for Maize Growth in Boron-Deficient Conditions.

PubMed

Chatterjee, Mithu; Liu, Qiujie; Menello, Caitlin; Galli, Mary; Gallavotti, Andrea

2017-08-01

The micronutrient boron is essential in maintaining the structure of plant cell walls and is critical for high yields in crop species. Boron can move into plants by diffusion or by active and facilitated transport mechanisms. We recently showed that mutations in the maize boron efflux transporter ROTTEN EAR (RTE) cause severe developmental defects and sterility. RTE is part of a small gene family containing five additional members ( RTE2 - RTE6 ) that show tissue-specific expression. The close paralogous gene RTE2 encodes a protein with 95% amino acid identity with RTE and is similarly expressed in shoot and root cells surrounding the vasculature. Despite sharing a similar function with RTE , mutations in the RTE2 gene do not cause growth defects in the shoot, even in boron-deficient conditions. However, rte2 mutants strongly enhance the rte phenotype in soils with low boron content, producing shorter plants that fail to form all reproductive structures. The joint action of RTE and RTE2 is also required in root development. These defects can be fully complemented by supplying boric acid, suggesting that diffusion or additional transport mechanisms overcome active boron transport deficiencies in the presence of an excess of boron. Overall, these results suggest that RTE2 and RTE function are essential for maize shoot and root growth in boron-deficient conditions. Copyright © 2017 by the Genetics Society of America.

CdTe devices and method of manufacturing same

DOEpatents

Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

2015-09-29

A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.