Science.gov

Sample records for polycrystalline thin-film cadmium-telluride

  1. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect

    Not Available

    2013-06-01

    This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

  2. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

  3. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition

    NASA Astrophysics Data System (ADS)

    Trefny, J. U.; Furtak, T. E.; Williamson, D. L.; Kim, D.

    1994-07-01

    This report describes the principal results of work performed during the second year of a 3-year program at the Colorado School of Mines (CSM). The work on transparent conducting oxides was carried out primarily by CSM students at NREL and is described in three publications listed in Appendix C. The high-quality ZnO produced from the work was incorporated into a copper indium diselenide cell that exhibited a world-record efficiency of 16.4%. Much of the time was devoted to the improvement of cadmium sulfide films deposited by chemical bath deposition methods and annealed with or without a cadmium chloride treatment. Progress was also made in the electrochemical deposition of cadmium telluride. High-quality films yielding CdS/CdTe/Au cells of greater than 10% efficiency are now being produced on a regular basis. We explored the use of zinc telluride back contacts to form an n-i-p cell structure as previously used by Ametek. We began small-angle x-ray scattering (SAXS) studies to characterize crystal structures, residual stresses, and microstructures of both CdTe and CdS. Large SAXS signals were observed in CdS, most likely because of scattering from gain boundaries. The signals observed to date from CdTe are much weaker, indicating a more homogeneous microstructure. We began to use the ADEPT modeling program, developed at Purdue University, to guide our understanding of the CdS/CdTe cell physics and the improvements that will most likely lead to significantly enhanced efficiencies.

  4. Surface oxidation of polycrystalline cadmium telluride thin films for Schottky barrier junction solar cells

    NASA Astrophysics Data System (ADS)

    Yi, X.; Liou, J. J.

    1995-06-01

    Polycrystalline CdTe thin films grown on graphite or tungsten-coated graphite substrates by chemical vapor deposition (CVD) were exposed to the air at room temperature in a natural atmosphere of about 60% air humidity for 6 months. X-ray photoemission spectroscopy (XPS) and Auger electron spectroscopy (AES) of the films indicate that a tellurium dioxide (TeO 2) overlayer has formed from this process. The effects of such an overlayer on the electrical property of polycrystalline CdTe-based Schottky barrier junction solar cells have also been discussed for the first time. It is shown that a solar cell formed on a CdTe film with TeO 2 overlayer has considerably higher open-circuit voltage and fill factor than that formed on a CdTe film without TeO 2 overlayer. Our study further indicates that using a polycrystalline CdTe film which is thermally oxidized at above room temperature (100-400°C) does not provide any improvement on the solar cell efficiency.

  5. Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

    NASA Astrophysics Data System (ADS)

    Ojo, A. A.; Dharmadasa, I. M.

    2017-08-01

    Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

  6. Polycrystalline thin film photovoltaic technology

    SciTech Connect

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L.; Noufi, R.

    1991-03-01

    Low-cost, high-efficiency thin-film modules are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. In this paper we review the significant technical progress made in the following thin films: copper indium diselenide, cadmium telluride, and polycrystalline thin silicon films. Also, the recent US DOE/SERI initiative to commercialize these emerging technologies is discussed. 6 refs., 9 figs.

  7. Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates

    SciTech Connect

    Seo, Won-Oh; Kim, Jihyun; Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol; Kim, Donghwan

    2014-08-25

    We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2 MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

  8. Study of Photo-Conductivity in Nano-Crystalline Cadmium Telluride Thin Films

    SciTech Connect

    Mahesha, M. G.; Bangera, Kasturi V.; Shivakumar, G. K.

    2011-07-15

    Nano crystallite thin films of Cadmium Telluride have been grown on glass substrates by thermal evaporation under vacuum. The growth conditions to get stoichiometric films of the compound have been optimized. The effect of substrate temperature and annealing on photosensitivity has been investigated. Also the effect of deposition parameters and post deposition annealing on rise time and decay time have been studied in detail.

  9. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual subcontract report, 20 March 1992--19 March 1993

    SciTech Connect

    Trefny, J.U.; Furtak, T.E.; Wada, N.; Williamson, D.L.; Kim, D.

    1993-08-01

    This report describes progress during the first year of a 3-year program at Colorado School of Mines, based upon earlier studies performed by Ametek Corporation, to develop specific layers of the Ametek n-i-p structure as well as additional studies of several transparent conducting oxides. Thin films of ZnO and ZnO:Al were deposited under various conditions. For the n-layer of the Ametek structure, a dip-coating method was developed for the deposition of CdS films. The authors also present data on the characterization of these films by X-ray diffraction, Raman spectroscopy, scanning tunneling microscopy, small-angle X-ray scattering, and other techniques. They made progress in the electrodeposition of the CdTe i-layer of the Ametek structure. They developed appropriate electrochemical baths and are beginning to understand the role of the many experimental parameters that must be controlled to obtain high-quality films of this material. They explored the possibility of using an electrochemical process for fabricating the ZnTe p-layer. Some preliminary success was achieved, and this step will be pursued in the next phase. Finally, they fabricated a number of ``dot`` solar cells with the structure glass/SnO{sub 2}/CdS/CdTe/Au. Several cells with efficiencies in the range of 5%-6% were obtained, and they are confident, given recent progress, that cells with efficiencies in excess of 10% will be achieved in the near future.

  10. Ion implantation of erbium into polycrystalline cadmium telluride

    SciTech Connect

    Ushakov, V. V. Klevkov, Yu. V.; Dravin, V. A.

    2015-05-15

    The specific features of the ion implantation of polycrystalline cadmium telluride with grains 20–1000 μm in dimensions are studied. The choice of erbium is motivated by the possibility of using rare-earth elements as luminescent “probes” in studies of the defect and impurity composition of materials and modification of the composition by various technological treatments. From the microphotoluminescence data, it is found that, with decreasing crystal-grain dimensions, the degree of radiation stability of the material is increased. Microphotoluminescence topography of the samples shows the efficiency of the rare-earth probe in detecting regions with higher impurity and defect concentrations, including regions of intergrain boundaries.

  11. Thin film cadmium telluride solar cells. Final technical report for period July 1, 1979-August 31, 1980

    SciTech Connect

    Chu, T.L.

    1980-08-01

    The objectives of this contract are to investigate thin films of cadmium telluride on low cost substrates and to determine the feasibility of using these films for high efficiency solar cells. Efforts during this program have been directed to the construction of apparatus for the chemical vapor deposition of cadmium telluride films, the selection and preparation of substrates, the deposition and characterization of cadmium telluride films, and the fabrication and characterization of solar cells. Cadmium telluride films have been deposited on a number of substrates by the direct combination of cadmium and tellurium on the substrate surface at 500/sup 0/C or higher at rates of up to 0.6 ..mu..m/min. The structural, crystallographic, and electrical properties of cadmium telluride films deposited over a wide range of conditions have been evaluated. A series of doping experiments have been carried out using iodine and indium as the n-type dopant, and phosphorus, arsenic, and antimony as the p-type dopant. Low resistivity films have not been produced thus far. In/W/graphite substrates have been used for the deposition of n-type films with an ohmic interface. However, no suitable substrates have been found to form an ohmic interface with p-type films. Solar cells prepared from these films exhibit relatively good short-circuit current density, up to 15 mA/cm/sup 2/, but their conversion efficiencies are severely limited by the high series resistance of the devices.

  12. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells

    SciTech Connect

    Chu, T.L. )

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  13. Spectroscopic ellipsometry as a process control tool for manufacturing cadmium telluride thin film photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Smith, Westcott P.

    In recent decades, there has been concern regarding the sustainability of fossil fuels. One of the more promising alternatives is Cadmium Telluride (CdTe) thin-film photovoltaic (PV) devices. Improved quality measurement techniques may aid in improving this existing technology. Spectroscopic ellipsometry (SE) is a common, non-destructive technique for measuring thin films in the silicon wafer industry. SE results have also been tied to properties believed to play a role in CdTe PV device efficiency. A study assessing the potential of SE for use as a quality measurement tool had not been previously reported. Samples of CdTe devices produced by both laboratory and industrial scale processes were measured by SE and Scanning Electron Microscopy (SEM). Mathematical models of the optical characteristics of the devices were developed and fit to SE data from multiple angles and locations on each sample. Basic statistical analysis was performed on results from the automated fits to provide an initial evaluation of SE as a quantitative quality measurement process. In all cases studied, automated SE models produced average stack thickness values within 10% of the values produced by SEM, and standard deviations for the top bulk layer thickness were less than 1% of the average values.

  14. Progress and issues in polycrystalline thin-film PV technologies

    SciTech Connect

    Zweibel, K.; Ullal, H.S.; Roedern, B. von

    1996-05-01

    Substantial progress has occurred in polycrystalline thin-film photovoltaic technologies in the past 18 months. However, the transition to first-time manufacturing is still under way, and technical problems continue. This paper focuses on the promise and the problems of the copper indium diselenide and cadmium telluride technologies, with an emphasis on continued R&D needs for the near-term transition to manufacturing and for next-generation improvements. In addition, it highlights the joint R&D efforts being performed in the U.S. Department of Energy/National Renewable Energy Laboratory Thin-Film Photovoltaic Partnership Program.

  15. Polycrystalline Thin-Film Photovoltaic Technologies: Progress and Technical Issues

    SciTech Connect

    Ullal, H. S.

    2004-08-01

    Polycrystalline thin-film materials based on copper indium diselenide (CuInSe2, CIS) and cadmium telluride (CdTe) are promising thin-film solar cells for various power and specialty applications. Impressive results have been obtained in the past few years for both thin-film copper indium gallium diselenide (CIGS) solar cells and thin-film CdTe solar cells. NCPV/NREL scientists have achieved world-record, total-area efficiencies of 19.3% for a thin-film CIGS solar cell and 16.5% for thin-film CdTe solar cell. A number of technical R&D issues related to CIS and CdTe have been identified. Thin-film power module efficiencies up to 13.4% has been achieved thus far. Tremendous progress has been made in the technology development for module fabrication, and multi-megawatt manufacturing facilities are coming on line with expansion plans in the next few years. Several 40-480 kW polycrystalline thin-film, grid-connected PV arrays have been deployed worldwide. Hot and humid testing is also under way to validate the long-term reliability of these emerging thin-film power products. The U.S. thin-film production (amorphous silicon[a-Si], CIS, CdTe) is expected to exceed 50 MW by the end of 2005.

  16. Thin film cadmium telluride charged particle sensors for large area neutron detectors

    SciTech Connect

    Murphy, J. W.; Smith, L.; Calkins, J.; Mejia, I.; Cantley, K. D.; Chapman, R. A.; Quevedo-Lopez, M.; Gnade, B.; Kunnen, G. R.; Allee, D. R.; Sastré-Hernández, J.; Contreras-Puente, G.; Mendoza-Pérez, R.

    2014-09-15

    Thin film semiconductor neutron detectors are an attractive candidate to replace {sup 3}He neutron detectors, due to the possibility of low cost manufacturing and the potential for large areas. Polycrystalline CdTe is found to be an excellent material for thin film charged particle detectors—an integral component of a thin film neutron detector. The devices presented here are characterized in terms of their response to alpha and gamma radiation. Individual alpha particles are detected with an intrinsic efficiency of >80%, while the devices are largely insensitive to gamma rays, which is desirable so that the detector does not give false positive counts from gamma rays. The capacitance-voltage behavior of the devices is studied and correlated to the response due to alpha radiation. When coupled with a boron-based neutron converting material, the CdTe detectors are capable of detecting thermal neutrons.

  17. Polycrystalline thin-film solar cells and modules

    SciTech Connect

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  18. Electrical Characterization of Thin Film Cadmium Telluride Electrodeposited from Tri-N Telluride

    NASA Astrophysics Data System (ADS)

    von Windheim, Jesko A.

    copper. The decreasing carrier concentration was accompanied by a decrease in resistivity and a decrease in mobility. The effect of dopant density on the resistivity of the polycrystalline cadmium telluride films, deposited from tri-n-butylphosphine telluride, can consistently be described by a grain boundary model. In this model charging of grain boundary states results in a barrier and can affect the carrier density. According to the model, dopants accumulated at grain boundaries do not generate carriers and do not affect the density of interface states.

  19. Investigation of the electrophysical characteristics of SIS structures based on polycrystalline cadmium telluride

    NASA Astrophysics Data System (ADS)

    Mirsagatov, Sh. A.; Muzafarova, S. A.; Pak, V.

    Results are presented on the electrophysical characteristics of SIS structures based on polycrystalline cadmium telluride (structures used for solar cells). The volt-farad characteristics, the distribution of the concentration of surface states, impurity-distribution profiles in CdTe, and the dependence of the time of capture of electrons and holes by surface states on surface potential are examined for SnO2/pCdTe, ITO/pCdTe, and In2O3/pCdTe.

  20. Electrodeposition and characterization of cadmium telluride and lead telluride thin films

    NASA Astrophysics Data System (ADS)

    Nicic, Igor

    . In addition, analysis of the current-time data indicates that this process occurs by a two-dimensional instantaneous nucleation and growth mechanism resulting in an ordered overlayer with a fractional coverage of ca. 0.41. The second UPD peak results in the formation of a dense monolayer by deposition of HTeO2+ from solution. This process also appears to occur by a direct 4-electron reduction and exhibits simple Langmuir adsorption behavior as evidenced by exponentially decaying current-time transients. The saturation coverage is approximately 0.9 in comparison to the number of gold atoms on the surface. Growth of CdTe and PbTe thin films is reported in chapter four. CdTe and PbTe have a wide range of applications including thermoelectric generators, solar cells and infra-red detectors. In this chapter we present optimized conditions for electrocodeposition of thin films of CdTe and PbTe. A study by EDX and XPS helped in determining concentrations needed for stoichiometric growth of CdTe and PbTe thin films. EQCM gave insights into the deposition mechanism and preliminary XRD data showed that both CdTe and PbTe have preferential orientation growth. Conditions for optimal film growth are described. Film formation was studied by EQCM and electrochemistry and XRD.

  1. Intense pulsed light treatment of cadmium telluride nanoparticle-based thin films.

    PubMed

    Dharmadasa, Ruvini; Lavery, Brandon; Dharmadasa, I M; Druffel, Thad

    2014-04-09

    The search for low-cost growth techniques and processing methods for semiconductor thin films continues to be a growing area of research; particularly in photovoltaics. In this study, electrochemical deposition was used to grow CdTe nanoparticulate based thin films on conducting glass substrates. After material characterization, the films were thermally sintered using a rapid thermal annealing technique called intense pulsed light (IPL). IPL is an ultrafast technique which can reduce thermal processing times down to a few minutes, thereby cutting production times and increasing throughput. The pulses of light create localized heating lasting less than 1 ms, allowing films to be processed under atmospheric conditions, avoiding the need for inert or vacuum environments. For the first time, we report the use of IPL treatment on CdTe thin films. X-ray diffraction (XRD), optical absorption spectroscopy (UV-Vis), scanning electron microscopy (SEM) and room temperature photoluminescence (PL) were used to study the effects of the IPL processing parameters on the CdTe films. The results found that optimum recrystallization and a decrease in defects occurred when pulses of light with an energy density of 21.6 J cm(-2) were applied. SEM images also show a unique feature of IPL treatment: the formation of a continuous melted layer of CdTe, removing holes and voids from a nanoparticle-based thin film.

  2. Drift Mobility Measurements and Electrical Characterization in Thin Film Cadmium Telluride Solar Cells

    NASA Astrophysics Data System (ADS)

    Long, Qi

    Thin film CdTe solar cells are leading the production in the thin film photovoltaic industry for the recent few years. The electric properties and mechanism for fabrication of high efficiency solar cells are still not well established. In this thesis, I'll report electron and hole drift mobilities measurements in thin film CdTe solar cells based on two characterization methods: time-of-flight and photocapacitance. For a deposition process similar to that used for high-efficiency cells, the electron drift mobilities are in the range 10-1 -- 100 cm2/Vs, and holes are in the range 100 -- 101 cm2/Vs. The electron drift mobilities are three orders of magnitude smaller than those measured in single crystal CdTe, the hole mobilities are about ten times smaller. Cells were examined before and after a vapor phase treatment with CdCl2; treatment had little effect on the hole drift mobility, but decreased the electron mobility. The electron mobility shows an interesting inverse correlation with the open-circuit voltage for the CdTe coupons with and without the CdCl2 treatment. We speculate that this correlation is due to the diffusion limited recombination. We also discuss the mechanisms reducing the mobilities from the single crystal values. In this thesis, we are able to exclude bandtail trapping and dispersion as a mechanism for the small drift mobilities in thin film CdTe. Other mechanisms like classic scattering, grain boundaries effect, and also polaron interaction will also be discussed in this thesis. All mechanisms mentioned above show little evidence on the influence to the mobility value. The true reason for such a huge change of the drift mobility from its single crystal values still need more interpretations.

  3. Polycrystalline thin-film technology: Recent progress in photovoltaics

    NASA Astrophysics Data System (ADS)

    Mitchell, R. L.; Zweibel, K.; Ullal, H. S.

    1991-12-01

    Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe2), cadmium telluride (CdTe), and thin film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin film CuInSe2, has made some rapid advances in terms of high efficiency and long term reliability. For CuInSe2 power modules, a world record has been reported on a 0.4 sq m module with an aperture-area efficiency of 10.4 pct. and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe2 modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 sq cm. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10 pct.; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

  4. Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint

    SciTech Connect

    Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

    2011-07-01

    It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

  5. Electron-reflector strategy for cadmium telluride thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Hsiao, Kuo-Jui

    The CdTe thin-film solar cell has a large absorption coefficient and high theoretical efficiency. Moreover, large-area photovoltaic panels can be economically fabricated. These features potentially make the CdTe thin-film solar cell the leading alternative energy source. However, the record CdTe efficiency (16.5%) is much less than its theoretical maximum efficiency (29%), primarily because the open-circuit voltage (0.845 V) is well below what is expected for its band gap (1.5 eV). The incorporation of an electron reflector is a strategy to improve the open-circuit voltage of solar cells, and thus a strong possibility to improve the efficiency of CdTe thin-film solar cells. An electron reflector is a conduction-band energy barrier at the back surface of the solar cell, which can reduce the recombination due to the electron flow to the back surface. Different methods to create an electron reflector are explained in the thesis: (1) expanded band gap, either an expanded-band-gap layer or a bulk-band-gap reduction, and (2) alteration to the band bending through a reversed back barrier or a heavily-doped back surface. Investigation shows that the expanded-band-gap layer is the most efficient and practical mechanism for an electron reflector, and the combination of any two mechanisms does not yield additional improvement. To have the optimal effect from the electron-reflector strategy, reasonable CdTe lifetime (1 ns or above) and full depletion of the CdTe layer are required to ensure high carrier collection. Furthermore, a good-quality reflector interface between the p-type CdTe layer and the electron-reflector layer is essential. Preliminary experimental evidence has shown that CdTe cells with a ZnTe back layer do have a slightly higher open-circuit voltage. An electron reflector should be particularly beneficial for thin (less than 2 microm) CdTe cells which have a fully-depleted CdTe absorber layer. Thin CdTe cells can also benefit from the optical reflection at the

  6. Investigations on electrochemical growth and properties of mercury cadmium telluride semiconductor thin films for device fabrication

    NASA Astrophysics Data System (ADS)

    Kumaresan, R.; Moorthy Babu, S.; Ramasamy, P.

    1999-03-01

    Thin films of Hg 1- xCd xTe was deposited on `Ni' substrates by electrodeposition technique from an aqueous solution containing mixture of CdCl 2, HgCl 2 and TeO 2 by potentiostatic technique. The co-deposition conditions of Hg, Cd and Te were optimized by using voltammogram and Pourbaix diagram as a tool. From the same electrolyte, at lower potential Hg rich MCT was formed and at a higher potential Cd rich MCT was formed. The grown films were annealed and the films were analyzed by XRD, SEM, EDAX and the film thickness was also measured. The conductivity type of the film was confirmed by hot or thermoelectric probe method. The thickness of the film was in the order of ˜1 μm and it has a preferential orientation in (1 1 1) direction. Thermal annealing improves the crystalline quality of the as-deposited film. The Cd rich MCT exhibit a cauliflower morphology and the grain size is bigger than the Hg rich MCT film.

  7. Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

    SciTech Connect

    Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-13

    Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ∼ 165.4 cm{sup -1} suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

  8. Thin film cadmium telluride photovoltaic cells. Annual subcontract report, 1 November 1991--31 October 1992

    SciTech Connect

    Compaan, C.D.; Bohn, R.G.

    1993-10-01

    This report describes work to develop and optimize radio-frequency (RF) sputtering and laser-driven physical vapor deposition (LDPVD) for CdTe-based thin-film solar cells. Both of these techniques are vacuum-based and share several other common physical principles. However, they differ somewhat in the typical kinetic energies of Cd, Te, and S that impact on the growth surface. The values of several processing parameters-optimized with the LDPVD technique-were taken as starting values for the RF sputtering method. We completed an initial optimization of the sputtering parameters for the CdTe growth and also successfully sputtered CdS for the first time. In addition, we successfully fabricated what we believe are the first CdS/CdTe cells in which RF sputtering was used for both CdS and CdTe layers. We achieved an all-LDPVD ell with an air mass (AM) 1.5 efficiency of 10.5% and an all-RF-sputtered cell with AM 1.5 efficiency of 10.4%, as tested by NREL.

  9. Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

    NASA Astrophysics Data System (ADS)

    Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ˜ 165.4 cm-1 suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

  10. Development and evaluation of polycrystalline cadmium telluride dosimeters for accurate quality assurance in radiation therapy

    NASA Astrophysics Data System (ADS)

    Oh, K.; Han, M.; Kim, K.; Heo, Y.; Moon, C.; Park, S.; Nam, S.

    2016-02-01

    For quality assurance in radiation therapy, several types of dosimeters are used such as ionization chambers, radiographic films, thermo-luminescent dosimeter (TLD), and semiconductor dosimeters. Among them, semiconductor dosimeters are particularly useful for in vivo dosimeters or high dose gradient area such as the penumbra region because they are more sensitive and smaller in size compared to typical dosimeters. In this study, we developed and evaluated Cadmium Telluride (CdTe) dosimeters, one of the most promising semiconductor dosimeters due to their high quantum efficiency and charge collection efficiency. Such CdTe dosimeters include single crystal form and polycrystalline form depending upon the fabrication process. Both types of CdTe dosimeters are commercially available, but only the polycrystalline form is suitable for radiation dosimeters, since it is less affected by volumetric effect and energy dependence. To develop and evaluate polycrystalline CdTe dosimeters, polycrystalline CdTe films were prepared by thermal evaporation. After that, CdTeO3 layer, thin oxide layer, was deposited on top of the CdTe film by RF sputtering to improve charge carrier transport properties and to reduce leakage current. Also, the CdTeO3 layer which acts as a passivation layer help the dosimeter to reduce their sensitivity changes with repeated use due to radiation damage. Finally, the top and bottom electrodes, In/Ti and Pt, were used to have Schottky contact. Subsequently, the electrical properties under high energy photon beams from linear accelerator (LINAC), such as response coincidence, dose linearity, dose rate dependence, reproducibility, and percentage depth dose, were measured to evaluate polycrystalline CdTe dosimeters. In addition, we compared the experimental data of the dosimeter fabricated in this study with those of the silicon diode dosimeter and Thimble ionization chamber which widely used in routine dosimetry system and dose measurements for radiation

  11. Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby

    DOEpatents

    Wu, Xuanzhi; Sheldon, Peter

    2000-01-01

    A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

  12. Imaging as characterization techniques for thin-film cadmium telluride photovoltaics

    NASA Astrophysics Data System (ADS)

    Zaunbrecher, Katherine

    The goal of increasing the efficiency of solar cell devices is a universal one. Increased photovoltaic (PV) performance means an increase in competition with other energy technologies. One way to improve PV technologies is to develop rapid, accurate characterization tools for quality control. Imaging techniques developed over the past decade are beginning to fill that role. Electroluminescence (EL), photoluminescence (PL), and lock-in thermography are three types of imaging implemented in this study to provide a multifaceted approach to studying imaging as applied to thin-film CdTe solar cells. Images provide spatial information about cell operation, which in turn can be used to identify defects that limit performance. This study began with developing EL, PL, and dark lock-in thermography (DLIT) for CdTe. Once imaging data were acquired, luminescence and thermography signatures of non-uniformities that disrupt the generation and collection of carriers were identified and cataloged. Additional data acquisition and analysis were used to determine luminescence response to varying operating conditions. This includes acquiring spectral data, varying excitation conditions, and correlating luminescence to device performance. EL measurements show variations in a cell's local voltage, which include inhomogeneities in the transparent-conductive oxide (TCO) front contact, CdS window layer, and CdTe absorber layer. EL signatures include large gradients, local reduction of luminescence, and local increases in luminescence on the interior of the device as well as bright spots located on the cell edges. The voltage bias and spectral response were analyzed to determine the response of these non-uniformities and surrounding areas. PL images of CdTe have not shown the same level of detail and features compared to their EL counterparts. Many of the signatures arise from reflections and severe inhomogeneities, but the technique is limited by the external illumination source used to

  13. Study of copper-free back contacts to thin film cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Viswanathan, Vijay

    The goals of this project are to study Cu free back contact alternatives for CdS/CdTe thin film solar cells, and to research dry etching for CdTe surface preparation before contact application. In addition, an attempt has been made to evaluate the stability of some of the contacts researched. The contacts studied in this work include ZnTe/Cu2Te, Sb2Te 3, and Ni-P alloys. The ZnTe/Cu2Te contact system is studied as basically an extension of the earlier work done on Cu2Te at USF. RF sputtering from a compound target of ZnTe and Cu2Te respectively deposits these layers on etched CdTe surface. The effect of Cu2Te thickness and deposition temperature on contact and cell performance will be studied with the ZnTe depositions conditions kept constant. C-V measurements to study the effect of contact deposition conditions on CdTe doping will also be performed. These contacts will then be stressed to high temperatures (70--100°C) and their stability with stress time is analyzed. Sb2Te3 will be deposited on glass using RF sputtering, to study film properties with deposition temperature. The Sb2Te 3 contact performance will also be studied as a function of the Sb 2Te3 deposition temperature and thickness. The suitability of Ni-P alloys for back contacts to CdTe solar cells was studied by forming a colloidal mixture of Ni2P in graphite paste. The Ni-P contacts, painted on Br-methanol etched CdTe surface, will be studied as a function of Ni-P concentration (in the graphite paste), annealing temperature and time. Some of these cells will undergo temperature stress testing to determine contact behavior with time. Dry etching of CdTe will be studied as an alternative for wet etching processes currently used for CdTe solar cells. The CdTe surface is isotropically etched in a barrel reactor in N2, Ar or Ar:O 2 ambient. The effect of etching ambient, pressure, plasma power and etch time on contact performance will be studied.

  14. High efficiency cadmium telluride and zinc telluride based thin-film solar cells

    SciTech Connect

    Rohatgi, A.; Sudharsanan, R.; Ringel, S.A.; Chou, H.C. )

    1992-10-01

    This report describes work to improve the basic understanding of CdTe and ZnTe alloys by growing and characterizing these films along with cell fabrication. The major objective was to develop wide-band-gap (1.6--1.8 eV) material for the top cell, along with compatible window material and transparent ohmic contacts, so that a cascade cell design can be optimized. Front-wall solar cells were fabricated with a glass/SnO{sub 2}/CdS window, where the CdS film is thin to maximize transmission and current. Wide-band-gap absorber films (E{sub g} = 1.75 eV) were grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques, which provided excellent control for tailoring the film composition and properties. CdZnTe films were grown by both MBE and MOCVD. All the as-grown films were characterized by several techniques (surface photovoltage spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS)) for composition, bulk uniformity, thickness, and film and interface quality. Front-wall-type solar cells were fabricated in collaboration with Ametek Materials Research Laboratory using CdTe and CdZnTe polycrystalline absorber films. The effects of processing on ternary film were studied by AES and XPS coupled with capacitance voltage and current voltage measurements as a function of temperature. Bias-dependent spectral response and electrical measurements were used to test some models in order to identify and quantify dominant loss mechanisms.

  15. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991

    SciTech Connect

    Chu, T.L.

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  16. High-efficiency thin-film cadmium telluride photovoltaic cells. Annual technical report, January 20, 1996--January 19, 1997

    SciTech Connect

    Compaan, A D; Bohn, R G; Contreras-Puente, G

    1997-08-01

    The University of Toledo photovoltaics group has been instrumental in developing rf sputtering for CDs/CdTe thin-film solar cells. During the third phase of the present contract our work focussed on efforts to determine factors which limit the efficiency in our {open_quotes}all-sputtered{close_quotes} thin-film CdTe solar cells on soda-lime glass. We find that our all-sputtered cells, which are deposited at substantially lower temperature than those by sublimation or vapor deposition, require less aggressive CdCl{sub 2} treatments than do other deposition techniques and this is presumably related to CDs/CdTe interdiffusion. The CDs/CdTe interdiffusion process has been studied by several methods, including photoluminescence and capacitance-voltage measurements. Furthermore, we have deposited special thin bilayer films on quartz and borosilicate glass. Interdiffusion in these thin bilayers have been probed by Rutherford backscattering, with collaborators at Case Western Reserve University, and grazing incidence x-ray scattering (GIXS), with collaborators at the University at Buffalo and Brookhaven National Lab. Also, in order better to understand the properties of the ternary alloy material, we used laser physical vapor deposition to prepare a series of CdS{sub x}Te{sub 1-x} films on borosilicate glass. The composition of the alloy films was determined by wavelength dispersive x-ray spectroscopy at NREL. These films are currently being investigated by us and other groups at NREL and IEC.

  17. Process for producing large grain cadmium telluride

    DOEpatents

    Hasoon, F.S.; Nelson, A.J.

    1996-01-16

    A process is described for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 {micro}m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10{sup {minus}6} torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 {micro}m.

  18. Process for producing large grain cadmium telluride

    DOEpatents

    Hasoon, Falah S.; Nelson, Art J.

    1996-01-01

    A process for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 .mu.m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10.sup.-6 torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 .mu.m.

  19. High-efficiency, thin-film cadmium telluride photovoltaic cells. Annual subcontract report, 20 January 1994--19 January 1995

    SciTech Connect

    Compaan, A.D.; Bohn, R.G.; Rajakarunanayake, Y.

    1995-08-01

    This report describes work performed to develop and optimize the process of radio frequency (RF) sputtering for the fabrication of thin-film solar cells on glass. The emphasis is on CdTe-related materials including CdTe, CdS, ZnTe, and ternary alloy semiconductors. Pulsed laser physical vapor deposition (LPVD) was used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. For the sputtering work, a two-gun sputtering chamber was implemented, with optical access for monitoring temperature and growth rate. We studied the optical and electrical properties of the plasmas produced by two different kinds of planar magnetron sputter guns with different magnetic field configurations and strengths. Using LPVD, we studied alloy semiconductors such as CdZnTe and heavily doped semiconductors such as ZnTe:Cu for possible incorporation into graded band gap CdTe-based photovoltaic devices.

  20. Effects of nanoassembly on the optoelectronic properties of cadmium telluride - zinc oxide nanocomposite thin films for use in photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Beal, Russell Joseph

    Quantum-scale semiconductors embedded in an electrically-active matrix have the potential to improve photovoltaic (PV) device power conversion efficiencies by allowing the solar spectral absorption and photocarrier transport properties to be tuned through the control of short and long range structure. In the present work, the effects of phase assembly on quantum confinement effects and carrier transport were investigated in CdTe - ZnO nanocomposite thin films for use as a spectrally sensitized n-type heterojunction element. The nanocomposites were deposited via a dual-source, sequential radio-frequency (RF) sputter technique that offers the unique opportunity for in-situ control of the CdTe phase spatial distribution within the ZnO matrix. The manipulation of the spatial distribution of the CdTe nanophase allowed for variation in the electromagnetic coupling interactions between semiconductor domains and accompanying changes in the effective carrier confinement volume and associated spectral absorption properties. Deposition conditions favoring CdTe connectivity had a red shift in absorption energy onset in comparison to phase assemblies with a more isolated CdTe phase. While manipulating the absorption properties is of significant interest, the electronic behavior of the nanocomposite must also be considered. The continuity of both the matrix and the CdTe influenced the mobility pathways for carriers generated within their respective phases. Photoconductivity of the nanocomposite, dependent upon the combined influences of nanostructure-mediated optical absorption and carrier transport path, increased with an increased semiconductor nanoparticle number density along the applied field direction. Mobility of the carriers in the nanocomposite was further mediated by the interface between the ZnO and CdTe nanophases which acts as a source of carrier scattering centers. These effects were influenced by low temperature annealing of the nanocomposite which served to

  1. Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions

    PubMed Central

    Ramos-Ruiz, Adriana; Wilkening, Jean V.; Field, James A.; Sierra-Alvarez, Reyes

    2017-01-01

    A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (<8.2% and <3.6% of added Cd and Te, respectively). On the other hand, over the course of 30 days, 73% of the Cd and 21% of the Te were released to the synthetic leachate of a continuous-flow column simulating the acidic landfill phase. The dissolved Cd concentration was 3.24-fold higher than the TCLP limit (1 mg L-1), and 650-fold higher than the maximum contaminant level established by the US-EPA for this metal in drinking water (0.005 mg L-1). In contrast, the release of Cd and Te to the effluent of the continuous-flow column simulating the methanogenic phase of a landfill was negligible. The remarkable difference in the leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. PMID:28472709

  2. Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions.

    PubMed

    Ramos-Ruiz, Adriana; Wilkening, Jean V; Field, James A; Sierra-Alvarez, Reyes

    2017-08-15

    A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (<8.2% and <3.6% of added Cd and Te, respectively). On the other hand, over the course of 30days, 73% of the Cd and 21% of the Te were released to the synthetic leachate of a continuous-flow column simulating the acidic landfill phase. The dissolved Cd concentration was 3.24-fold higher than the TCLP limit (1mgL(-1)), and 650-fold higher than the maximum contaminant level established by the US-EPA for this metal in drinking water (0.005mgL(-1)). In contrast, the release of Cd and Te to the effluent of the continuous-flow column simulating the methanogenic phase of a landfill was negligible. The remarkable difference in the leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. Copyright © 2017 Elsevier B.V. All rights reserved.

  3. Polycrystalline thin films FY 1992 project report

    SciTech Connect

    Zweibel, K.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  4. Metastable electrical characteristics of polycrystalline thin-film photovoltaic modules upon exposure and stabilization

    NASA Astrophysics Data System (ADS)

    Deline, Chris A.; del Cueto, Joseph A.; Albin, David S.; Rummel, Steve R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65°C exposed in the dark under forward bias at 65°C and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  5. Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

    SciTech Connect

    Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  6. Polycrystalline thin film materials and devices

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. . Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  7. Progress Toward a Stabilization and Preconditioning Protocol for Polycrystalline Thin-Film Photovoltaic Modules

    SciTech Connect

    del Cueto, J. A.; Deline, C. A.; Rummel, S. R.; Anderberg, A.

    2010-08-01

    Cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules can exhibit substantial variation in measured performance depending on prior exposure history. This study examines the metastable performance changes in these PV modules with the goal of establishing standard preconditioning or stabilization exposure procedures to mitigate measured variations prior to current-voltage (IV) measurements.

  8. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report

    SciTech Connect

    Trefny, J.U.; Mao, D.

    1998-01-01

    During the past year, Colorado School of Mines (CSM) researchers performed systematic studies of the growth and properties of electrodeposition CdS and back-contact formation using Cu-doped ZnTe, with an emphasis on low Cu concentrations. CSM also started to explore the stability of its ZnTe-Cu contacted CdTe solar cells. Researchers investigated the electrodeposition of CdS and its application in fabricating CdTe/CdS solar cells. The experimental conditions they explored in this study were pH from 2.0 to 3.0; temperatures of 80 and 90 C; CdCl{sub 2} concentration of 0.2 M; deposition potential from {minus}550 to {minus}600 mV vs. Ag/AgCl electrode; [Na{sub 2}S{sub 2}O{sub 4}] concentration between 0.005 and 0.05 M. The deposition rate increases with increase of the thiosulfate concentration and decrease of solution pH. Researchers also extended their previous research of ZnTe:Cu films by investigating films doped with low Cu concentrations (< 5 at. %). The low Cu concentration enabled them to increase the ZnTe:Cu post-annealing temperature without causing excessive Cu diffusion into CdTe or formation of secondary phases. The effects of Cu doping concentration and post-deposition annealing temperature on the structural, compositional, and electrical properties of ZnTe were studied systematically using X-ray diffraction, atomic force microscopy, electron microprobe, Hall effect, and conductivity measurements.

  9. Thin-Film Photovoltaics: Status and Applications to Space Power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

  10. Applications of thin-film photovoltaics for space

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The authors discuss the potential applications of thin-film polycrystalline and amorphous cells for space. There have been great advances in thin-film solar cells for terrestrial applications. Transfer of this technology to space applications could result in ultra low-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper indium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon arrays. The possibility of using thin-film multi-bandgap cascade solar cells is discussed.

  11. Applications of thin-film photovoltaics for space

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The authors discuss the potential applications of thin-film polycrystalline and amorphous cells for space. There have been great advances in thin-film solar cells for terrestrial applications. Transfer of this technology to space applications could result in ultra low-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper indium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon arrays. The possibility of using thin-film multi-bandgap cascade solar cells is discussed.

  12. Thin-Film Photovoltaics: Status and Applications to Space Power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

  13. Polycrystalline-thin-film thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  14. Modeling of polycrystalline thin film solar cells

    NASA Astrophysics Data System (ADS)

    Fahrenbruch, Alan L.

    1999-03-01

    This paper describes modeling polycrystalline thin-film solar cells using the program AMPS-1D1 to visualize the relationships between the many variables involved. These simulations are steps toward two dimensional modeling the effects of grain boundaries in polycrystalline cells. Although this paper describes results for the CdS/CdTe cell, the ideas presented here are applicable to copper-indium-gallium selenide (CIGS) cells as well as other types of cells. Results of these one-dimensional simulations are presented: (a) the duplication of experimentally observed cell parameters, (b) the effects of back-contact potential barrier height and its relation to stressing the cell, (c) the effects of the depletion layer width in the CdTe layer on cell parameters, and (d) the effects of CdS layer thickness on the cell parameters. Experience using the software is also described.

  15. Cadmium telluride photovoltaic radiation detector

    DOEpatents

    Agouridis, Dimitrios C.; Fox, Richard J.

    1981-01-01

    A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semiconductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

  16. Cadmium telluride photovoltaic radiation detector

    DOEpatents

    Agouridis, D.C.; Fox, R.J.

    A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semi-conductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

  17. Progress in polycrystalline thin-film solar cells

    SciTech Connect

    Zweibel, K; Hermann, A; Mitchell, R

    1983-07-01

    Photovoltaic devices based on several polycrystalline thin-film materials have reached near and above 10% sunlight-to-electricity conversion efficiencies. This paper examines the various polycrystalline thin-film PV materials including CuInSe/sub 2/ and CdTe in terms of their material properties, fabrication techniques, problems, and potentials.

  18. Recent technological advances in thin film solar cells

    SciTech Connect

    Ullal, H.S.; Zwelbel, K.; Surek, T.

    1990-03-01

    High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

  19. POLYCRYSTALLINE THIN FILM SOLAR CELLS:Present Status and Future Potential

    NASA Astrophysics Data System (ADS)

    Birkmire, Robert W.; Eser, Erten

    1997-08-01

    Polycrystalline thin film solar cells on copper indium diselenide (CulnSe2) and its alloys and cadmium telluride (CdTe) appear to be the most promising candidates for large-scale application of photovoltaic energy conversion because they have shown laboratory-efficiences in excess of 15%. Heterojunction devices with n-type cadmium sulfide (CdS) films show very low minority carrier recombination at the absorber grain boundaries and at the metallurgical interface, which results in high quantum efficiences. Open circuit voltages of these devices are relatively low owing to the recombination in the space charge region in the absorber. Further improvements in efficiency can be achieved by reducing the recombination current, especially in devices based on CulnSe2 and its alloys. Low-cost manufacturing of modules requires better resolution of a number of other technical issues. For modules based on CulnSe2 and its alloys, the role of Na and higher deposition rates on device performance need to be better understood. In addition, replacing the chemical bath deposition method for CdS film deposition with an equally effective, but more environmentally acceptable process is needed. For modules based on CdTe, more fundamental understanding of the effect of chloride/oxygen treatment and the development of more reproducible and manufacturable CdTe contacting schemes are necessary.

  20. Polycrystalline silicon conductivity modulated thin film transistors

    NASA Astrophysics Data System (ADS)

    Anish, Kumar K. P.

    1997-09-01

    Polycrystalline silicon (poly-Si) thin-film transistors (TFTs) on glass has received significant attention for use in large area microelectronic applications. These applications include both niche and large volume applications such as printer drivers, image scanners, active-matrix liquid crystal displays (AMLCDs), electro-luminescent displays, plasma assisted displays, etc. Currently, the leading technology for these applications is amorphous-Si (a-Si) TFT. However, as the information content increases, a-Si technology encounters severe challenges due to its inherent low mobility, high parasitic capacitance, low aperture ratio, and non-compatibility to CMOS process. On the other hand, poly-Si technology offers high mobility, low parasitic capacitance, small size, CMOS compatibility, good stability, and uses the infrastructure of silicon science and technology. Thus, a simple low temperature poly-Si technology which allows large area system integration on panel will be in great demand for future high definition displays. However, it was found that poly-Si material properties vary with its method of preparation, its grain size, its surface roughness, and the nature and distribution of the inter-granular and bulk defects. Therefore, extensive studies are needed to optimize the key parameters such as the off-current, on-current, and breakdown voltage of the devices. These parameters can be optimized by means of material preparation as well as innovative device designs. In this thesis, three TFT structures were invented and fabricated using a simple low temperature poly-Si technology. With these novel structures, pixels, pixel drivers, and analog and digital peripheral circuits can all be built on the same glass substrate. This allows the ultimate goal of display systems on glass to be much more closer to reality. First, a high voltage transistor called the Conductivity Modulated Thin Film Transistor (CMTFT) is presented. Using this structure, the fundamental current

  1. Polycrystalline thin film materials and devices

    NASA Astrophysics Data System (ADS)

    Baron, B. N.; Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E.

    1991-11-01

    Results and conclusions of Phase 1 of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe2 and CdTe solar cells. The kinetics of the formation of CuInSe2 by selenization with hydrogen selenide was investigated and a CuInSe2/Cds solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe2 films and a cell efficiency of 7 percent. Detailed investigations of the open circuit voltage of CuInSe2 solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe2 thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe2 is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10 percent can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm(exp 2) are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.

  2. Improved transport properties of polycrystalline YBCO thin-films

    NASA Astrophysics Data System (ADS)

    Azoulay, J.; Verdyan, A.; Lapsker, I.

    1994-12-01

    Resistive evaporation technique was used to fabricate polycrystalline YBaCuO and YBaNaCuO thin films on MgO substrates. Heat treatment was carried out in a low oxygen partial pressure. Polycrystalline YBCO and Na doped YBCO thin films samples were thus obtained using the same technique and conditions. The critical current density of Na doped YBCO sample was measured to be significantly higher than that of the undoped YBCO one. The results are discussed in terms of the Na contribution to the intragrain conductivity.

  3. Flexible polycrystalline thin-film photovoltaics for space applications

    NASA Technical Reports Server (NTRS)

    Armstrong, J. H.; Lanning, B. R.; Misra, M. S.; Kapur, V. K.; Basol, B. M.

    1993-01-01

    Polycrystalline thin-film photovoltaics (PV), such as CIS and CdTe, have received considerable attention recently with respect to space power applications. Their combination of stability, efficiency, and economy from large-scale monolithic-integration of modules can have significant impact on cost and weight of PV arrays for spacecraft and planetary experiments. An added advantage, due to their minimal thickness (approximately 6 microns sans substrate), is the ability to manufacture lightweight, flexible devices (approximately 2000 W/kg) using large-volume manufacturing techniques. The photovoltaic effort at Martin Marietta and ISET is discussed, including large-area, large-volume thin-film deposition techniques such as electrodeposition and rotating cylindrical magnetron sputtering. Progress in the development of flexible polycrystalline thin-film PV is presented, including evaluation of flexible CIS cells. In addition, progress on flexible CdTe cells is presented. Finally, examples of lightweight, flexible arrays and their potential cost and weight impact is discussed.

  4. The state of the art of thin-film photovoltaics

    SciTech Connect

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

  5. Fabrication of polycrystalline thin films by pulsed laser processing

    DOEpatents

    Mitlitsky, Fred; Truher, Joel B.; Kaschmitter, James L.; Colella, Nicholas J.

    1998-02-03

    A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

  6. Fabrication of polycrystalline thin films by pulsed laser processing

    DOEpatents

    Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

    1998-02-03

    A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

  7. Charge Carrier Processes in Photovoltaic Materials and Devices: Lead Sulfide Quantum Dots and Cadmium Telluride

    NASA Astrophysics Data System (ADS)

    Roland, Paul

    Charge separation, transport, and recombination represent fundamental processes for electrons and holes in semiconductor photovoltaic devices. Here, two distinct materials systems, based on lead sulfide quantum dots and on polycrystalline cadmium telluride, are investigated to advance the understanding of their fundamental nature for insights into the material science necessary to improve the technologies. Lead sulfide quantum dots QDs have been of growing interest in photovoltaics, having recently produced devices exceeding 10% conversion efficiency. Carrier transport via hopping through the quantum dot thin films is not only a function of inter-QD distance, but of the QD size and dielectric media of the surrounding materials. By conducting temperature dependent transmission, photoluminescence, and time resolved photoluminescence measurements, we gain insight into photoluminescence quenching and size-dependent carrier transport through QD ensembles. Turning to commercially relevant cadmium telluride (CdTe), we explore the high concentrations of self-compensating defects (donors and acceptors) in polycrystalline thin films via photoluminescence from recombination at defect sites. Low temperature (25 K) photoluminescence measurements of CdTe reveal numerous radiative transitions due to exciton, trap assisted, and donor-acceptor pair recombination events linked with various defect states. Here we explore the difference between films deposited via close space sublimation (CSS) and radio frequency magnetron sputtering, both as-grown and following a cadmium chloride treatment. The as-grown CSS films exhibited a strong donor-acceptor pair transition associated with deep defect states. Constructing photoluminescence spectra as a function of time from time-resolved photoluminescence data, we report on the temporal evolution of this donor-acceptor transition. Having gained insight into the cadmium telluride film quality from low temperature photoluminescence measurements

  8. RESEARCH ON THIN FILM POLYCRYSTALLINE SOLAR CELLS.

    DTIC Science & Technology

    Studies of factors affecting the properties of polycrystalline CdTe film grown by the vapor reaction process are discussed and a variety of...molybdenum substrates are compared. No real differences are found. Rough measures of temperature effects and tellurium flow rate on film growth rate are

  9. Thin film polycrystalline silicon nanowire biosensors.

    PubMed

    Hakim, Mohammad M A; Lombardini, Marta; Sun, Kai; Giustiniano, Francesco; Roach, Peter L; Davies, Donna E; Howarth, Peter H; de Planque, Maurits R R; Morgan, Hywel; Ashburn, Peter

    2012-04-11

    Polysilicon nanowire biosensors have been fabricated using a top-down process and were used to determine the binding constant of two inflammatory biomarkers. A very low cost nanofabrication process was developed, based on simple and mature photolithography, thin film technology, and plasma etching, enabling an easy route to mass manufacture. Antibody-functionalized nanowire sensors were used to detect the proteins interleukin-8 (IL-8) and tumor necrosis factor-alpha (TNF-α) over a wide range of concentrations, demonstrating excellent sensitivity and selectivity, exemplified by a detection sensitivity of 10 fM in the presence of a 100,000-fold excess of a nontarget protein. Nanowire titration curves gave antibody-antigen dissociation constants in good agreement with low-salt enzyme-linked immunosorbent assays (ELISAs). This fabrication process produces high-quality nanowires that are suitable for low-cost mass production, providing a realistic route to the realization of disposable nanoelectronic point-of-care (PoC) devices.

  10. Controlled nanostructuration of polycrystalline tungsten thin films

    SciTech Connect

    Girault, B.; Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O.; Sauvage, T.

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  11. Polycrystalline Thin Film Device Degradation Studies

    SciTech Connect

    Albin, D. S.; McMahon, T. J.; Pankow, J. W.; Noufi, R.; Demtsu, S. H.; Davies, A.

    2005-11-01

    Oxygen during vapor CdCl2 (VCC) treatments significantly reduced resistive shunts observed in CdS/CdTe polycrystalline devices using thinner CdS layers during 100 deg C, open-circuit, 1-sun accelerated stress testing. Cu oxidation resulting from the reduction of various trace oxides present in as-grown and VCC treated films is the proposed mechanism by which Cu diffusion, and subsequent shunts are controlled. Graphite paste layers between metallization and CdTe behave like diffusion barriers and similarly benefit device stability. Ni-based contacts form a protective Ni2Te3 intermetallic layer that reduces metal diffusion but degrades performance through increased series resistance.

  12. Dynamical electrophotoconductivity in polycrystalline thin films

    NASA Technical Reports Server (NTRS)

    Kowel, S. T.; Kornreich, P. G.

    1982-01-01

    Polycrystalline cadmium sulfide (CdS) films were deposited on lithium niobate (LiNbO3) substrates by vacuum evaporation and annealed to obtain high photosensitivity. The change in photoconductivity of these films due to the penetration of electric fields associated with elastic waves propagating on their substrates was demonstrated and studied. The relationship between the acoustic electric field and the induced change in film conductivity was found to be a nonlinear one. The fractional change in conductivity is strongly dependent on the light intensity and the film temperature, showing a prominent maximum as a function of these quantities. The largest recorded fractional change in conductivity was about 25% at electric fields of the order of 1,000 volts per centimeter. A phenomological model was developed based on the interaction between the space charge created by the electric field and the electron trapping states in the photoconductor.

  13. Advances in polycrystalline thin-film photovoltaics for space applications

    SciTech Connect

    Lanning, B.R.; Armstrong, J.H.; Misra, M.S.

    1994-09-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 eV and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not `reactor-specific` and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a `substrate configuration` by physical vapor deposition techniques and CdTe cells/modules are fabricated in a `superstrate configuration` by wet chemical methods.

  14. Hydrogen passivation of polycrystalline silicon thin films

    NASA Astrophysics Data System (ADS)

    Scheller, L.-P.; Weizman, M.; Simon, P.; Fehr, M.; Nickel, N. H.

    2012-09-01

    The influence of post-hydrogenation on the electrical and optical properties of solid phase crystallized polycrystalline silicon (poly-Si) was examined. The passivation of grain-boundary defects was measured as a function of the passivation time. The silicon dangling-bond concentration decreases with increasing passivation time due to the formation of Si-H complexes. In addition, large H-stabilized platelet-like clusters are generated. The influence of H on the electrical properties was investigated using temperature dependent conductivity and Hall-effect measurements. For poly-Si on Corning glass, the dark conductivity decreases upon hydrogenation, while it increases when the samples are fabricated on silicon-nitride covered Borofloat glass. Hall-effect measurements reveal that for poly-Si on Corning glass the hole concentration and the mobility decrease upon post-hydrogenation, while a pronounced increase is observed for poly-Si on silicon-nitride covered Borofloat glass. This indicates the formation of localized states in the band gap, which is supported by sub band-gap absorption measurments. The results are discussed in terms of hydrogen-induced defect passivation and generation mechanisms.

  15. High efficiency cadmium telluride and zinc telluride based thin-film solar cells. Annual subcontract report, 1 March 1990--28 February 1992

    SciTech Connect

    Rohatgi, A.; Sudharsanan, R.; Ringel, S.A.; Chou, H.C.

    1992-10-01

    This report describes work to improve the basic understanding of CdTe and ZnTe alloys by growing and characterizing these films along with cell fabrication. The major objective was to develop wide-band-gap (1.6--1.8 eV) material for the top cell, along with compatible window material and transparent ohmic contacts, so that a cascade cell design can be optimized. Front-wall solar cells were fabricated with a glass/SnO{sub 2}/CdS window, where the CdS film is thin to maximize transmission and current. Wide-band-gap absorber films (E{sub g} = 1.75 eV) were grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques, which provided excellent control for tailoring the film composition and properties. CdZnTe films were grown by both MBE and MOCVD. All the as-grown films were characterized by several techniques (surface photovoltage spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS)) for composition, bulk uniformity, thickness, and film and interface quality. Front-wall-type solar cells were fabricated in collaboration with Ametek Materials Research Laboratory using CdTe and CdZnTe polycrystalline absorber films. The effects of processing on ternary film were studied by AES and XPS coupled with capacitance voltage and current voltage measurements as a function of temperature. Bias-dependent spectral response and electrical measurements were used to test some models in order to identify and quantify dominant loss mechanisms.

  16. Advances in polycrystalline thin-film photovoltaics for space applications

    NASA Astrophysics Data System (ADS)

    Lanning, Bruce R.; Armstrong, Joseph H.; Misra, Mohan S.

    1994-09-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical

  17. Advances in polycrystalline thin-film photovoltaics for space applications

    NASA Technical Reports Server (NTRS)

    Lanning, Bruce R.; Armstrong, Joseph H.; Misra, Mohan S.

    1994-01-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical

  18. Mercury Telluride and Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    2004-01-01

    A semiconductor's usefulness is determined by how atoms are ordered within the crystal's underlying three-dimensional structure. While this mercury telluride and cadmium telluride alloy sample mixes completely in Earth -based laboratories, convective flows prevent them from mixing uniformly.

  19. Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride

    SciTech Connect

    Albin, D. S. Kuciauskas, D.; Ma, J.; Metzger, W. K.; Burst, J. M.; Moutinho, H. R.; Dippo, P. C.

    2014-03-03

    Low-temperature photoluminescence emission spectra were measured in cadmium telluride (CdTe) samples in which composition was varied to promote either Cd or Te-rich stoichiometry. The ability to monitor stoichiometry is important, since it has been shown to impact carrier recombination. Te-rich samples show transitions corresponding to acceptor-bound excitons (∼1.58 eV) and free-electron to acceptor transitions (∼1.547 eV). In addition to acceptor-bound excitons, Cd-rich samples show transitions assigned to donor-bound excitons (1.591 eV) and Te vacancies at 1.552 eV. Photoluminescence is a noninvasive way to monitor stoichiometric shifts induced by post-deposition anneals in polycrystalline CdTe thin films deposited by close-spaced sublimation.

  20. Different spin relaxation mechanisms between epitaxial and polycrystalline Ta thin films

    NASA Astrophysics Data System (ADS)

    Gamou, Hiromu; Ryu, Jeongchun; Kohda, Makoto; Nitta, Junsaku

    2017-02-01

    We demonstrate that spin relaxation mechanisms are different between epitaxial Ta and disordered polycrystalline Ta thin films by determining the relationship between spin relaxation time and diffusion constant. To control the diffusion constant, epitaxial Ta and polycrystalline Ta thin films are prepared by sputtering on different substrates and at different growth temperatures. The spin relaxation time is extracted from the results of weak antilocalization analysis including the superconducting fluctuation effect. The dominant spin relaxation mechanism for polycrystalline Ta thin films is the Elliot–Yafet mechanism, as is expected for centrosymmetric metal films. In contrast, the D’yakonov–Perel’ mechanism plays a role in epitaxial Ta thin films.

  1. Electrical Properties of Polycrystalline Cadmium Sulfide Films Produced by Laser-Driven Physical Vapor Deposition for Cadmium Sulfide/cadmium Telluride Solar Cells

    NASA Astrophysics Data System (ADS)

    Tsien, Li-Hua

    1992-01-01

    Electrical conductivity, carrier density, and mobilities have been measured for CdS films grown on glass substrates by laser-driven physical vapor deposition (LDPVD). This work was part of an overall effort to gain a better understanding of the processes that are important in determining the efficiency of CdTe-based thin film solar cells. Films were grown from several target materials including pure CdS, CdS doped with indium, and CdS mixed with cadmium chloride. Some films were also subjected to post-growth chemical and thermal treatments. Generally, grain boundary effects dominate the mobility between 80K and 350K. The data is interpreted using a model for polycrystalline and powdered semiconductors which was developed by Orton and Powell (J. S. Orton and M. J. Powell, Rep. Prog. Phys. 43, 81 (1980)) and is discussed using the concept of effective doping levels.

  2. Formation of porous grain boundaries in polycrystalline silicon thin films

    NASA Astrophysics Data System (ADS)

    Kageyama, Yasuyuki; Murase, Yoshie; Tsuchiya, Toshiyuki; Funabashi, Hirofumi; Sakata, Jiro

    2002-06-01

    Unique polycrystalline silicon (poly-Si) thin films, which were permeable to a concentrated hydrofluoric acid solution through their porous grain boundaries, were investigated to elucidate the formation mechanism of their microstructure. 0.1-μm-thick permeable poly-Si thin films were made through processes of amorphous silicon film formation by low pressure chemical vapor deposition, successive postannealing for crystallization, and excess phosphorus diffusion by a phosphorus oxichloride predeposition. At the grain boundaries, porous microstructures were formed after the films were cleaned in an SC1 solution (a 1:1:5 mixture of NH4OH:H2O2:H2O at 80 °C for 10 min), whereas segregated soluble precipitates observed by a field emission secondary electron microscope were present before the SC1 cleaning. Auger electron microscope revealed that the surface of the precipitates mainly consist of silicon (˜80 at. %) and oxygen (˜20 at. %). As a result of transmission electron microscope observation, it is concluded that enhancement of silicon atom mobility by the phosphorus doping process induced consequent segregation of the soluble precipitates at the grain boundaries.

  3. Mercury Telluride and Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    2004-01-01

    A semiconductor's usefulness is determined by how atoms are ordered within the crystal's underlying three-dimensional structure. While this mercury telluride and cadmium telluride alloy sample mixes completely in Earth -based laboratories, convective flows prevent them from mixing uniformly. In space, the ingredients mix more homogenously, resulting in a superior product.

  4. Fundamentals of polycrystalline thin film materials and devices

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. . Inst. of Energy Conversion)

    1991-01-01

    This report presents the results of a one-year research program on polycrystalline thin-film solar cells. The research was conducted to better understand the limitations and potential of solar cells using CuInSe{sub 2} and CdTe by systematically investigating the fundamental relationships linking material processing, material properties, and device behavior. By selenizing Cu and In layers, we fabricated device-quality CuInSe{sub 2} thin films and demonstrated a CuInSe{sub 2} solar cell with 7% efficiency. We added Ga, to increase the band gap of CuInSe{sub 2} devices to increase the open-circuit voltage to 0.55 V. We fabricated and analyzed Cu(InGa)Se{sub 2}/CuInSe{sub 2} devices to demonstrate the potential for combining the benefits of higher V{sub oc} while retaining the current-generating capacity of CuInSe{sub 2}. We fabricated an innovative superstrate device design with more than 5% efficiency, as well as a bifacial spectral-response technique for determining the electron diffusion length and optical absorption coefficient of CuInSe{sub 2} in an operational cell. The diffusion length was found to be greater than 1 {mu}m. We qualitatively modeled the effect of reducing heat treatments in hydrogen and oxidizing treatments in air on the I-V behavior of CuInSe{sub 2} devices. We also investigated post-deposition heat treatments and chemical processing and used them to fabricate a 9.6%-efficient CdTe/CdS solar cell using physical vapor deposition.

  5. Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

  6. Charge carrier transport in polycrystalline organic thin film based field effect transistors

    NASA Astrophysics Data System (ADS)

    Rani, Varsha; Sharma, Akanksha; Ghosh, Subhasis

    2016-05-01

    The charge carrier transport mechanism in polycrystalline thin film based organic field effect transistors (OFETs) has been explained using two competing models, multiple trapping and releases (MTR) model and percolation model. It has been shown that MTR model is most suitable for explaining charge carrier transport in grainy polycrystalline organic thin films. The energetic distribution of traps determined independently using Mayer-Neldel rule (MNR) is in excellent agreement with the values obtained by MTR model for copper phthalocyanine and pentacene based OFETs.

  7. High-Efficiency Polycrystalline Thin Film Tandem Solar Cells.

    PubMed

    Kranz, Lukas; Abate, Antonio; Feurer, Thomas; Fu, Fan; Avancini, Enrico; Löckinger, Johannes; Reinhard, Patrick; Zakeeruddin, Shaik M; Grätzel, Michael; Buecheler, Stephan; Tiwari, Ayodhya N

    2015-07-16

    A promising way to enhance the efficiency of CIGS solar cells is by combining them with perovskite solar cells in tandem devices. However, so far, such tandem devices had limited efficiency due to challenges in developing NIR-transparent perovskite top cells, which allow photons with energy below the perovskite band gap to be transmitted to the bottom cell. Here, a process for the fabrication of NIR-transparent perovskite solar cells is presented, which enables power conversion efficiencies up to 12.1% combined with an average sub-band gap transmission of 71% for photons with wavelength between 800 and 1000 nm. The combination of a NIR-transparent perovskite top cell with a CIGS bottom cell enabled a tandem device with 19.5% efficiency, which is the highest reported efficiency for a polycrystalline thin film tandem solar cell. Future developments of perovskite/CIGS tandem devices are discussed and prospects for devices with efficiency toward and above 27% are given.

  8. Research on Mercury Cadmium Telluride.

    DTIC Science & Technology

    1986-05-20

    12180-3590 (Received 25 September 1985; accepted for publication 16 December 1985) Growth of epitaxial mercury cadmium telluride (Hg, Cd, Te) on 100...one another. 2015 j Appi Phys .vol 57. No 6. 15 March � Oaccar etai 2015 • : -. ...... ., " .. .’. .- 6 We have carried out a full EER study of...strained materials. K C Hi,,. U Fhrf r Ailn.od H P , Re, " . : 21’󈧘 7 •Aog, >ys . ,o 57 5.o 6 𔃿 a’c" � : acca - ’i :,’" Growth of CdTe on GaAs by

  9. Superconductor—Insulator Transitions in Pure Polycrystalline Nb Thin Films

    NASA Astrophysics Data System (ADS)

    Couedo, F.; Crauste, O.; Bergé, L.; Dolgorouky, Y.; Marrache-Kikuchi, C.; Dumoulin, L.

    2012-12-01

    We report on a study of the transport properties of Nb thin films. By varying the thickness of the films from 263 Å to 25 Å, we observed a depression of the superconductivity. Magnetic field was also applied up to 6 T, inducing the disappearance of the superconductivity and the onset of an insulating behavior. The results were compared to those we have already obtained on a highly disordered system, a-NbxSi1-x, to understand whether the same mechanisms for the disappearance of the superconductivity could be at play in pure metallic thin films and in highly disordered systems.

  10. Research support for cadmium telluride crystal growth

    NASA Technical Reports Server (NTRS)

    Rosenberger, Franz; Banish, Michael

    1993-01-01

    Work performed during the period 11 Feb. 1992 to 10 Aug. 1993 on research support for cadmium telluride crystal growth is reported. Work on chemical impurity characterization and mass spectroscopy is described.

  11. Mercury Cadmium Telluride Sputtered Target Research.

    DTIC Science & Technology

    1982-06-29

    ShirnlU in 1967 to describe the altered layer formation in the binary alloy NiCr . This model assumes an infinitesimally thin layer being sputter ...AD-AL7 456 NEW JERSEY INST OF TECH NEWARK DEPT OP ELECTRICAL EN-ETC FIG 13/8 MERCURY CADMIUM TELLURIDE SPUTTERED TARGET RESEARCH( U) JUN 82 R H...MERCURY CADMIUM TELLURIDE SPUTTERED TARGET RESEARCH TYPE OF REPORT (TECHNICAL, FINAL, ETC.) FINAL TECHNICAL REPORT AUTHOR (S) ROY H. CORNELY DATE JUNE 29

  12. Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

    SciTech Connect

    Do, Woori; Jin, Won-Beom; Choi, Jungwan; Bae, Seung-Muk; Kim, Hyoung-June; Kim, Byung-Kuk; Park, Seungho; Hwang, Jin-Ha

    2014-10-15

    Highlights: • Intensified visible light irradiation was generated via a high-powered Xe arc lamp. • The disordered Si atomic structure absorbs the intensified visible light. • The rapid heating activates electrically boron-implanted Si thin films. • Flash lamp heating is applicable to low temperature polycrystalline Si thin films. - Abstract: Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in the electrical activation of boron-implanted Si thin films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films.

  13. Process for producing cadmium sulfide on a cadmium telluride surface

    DOEpatents

    Levi, Dean H.; Nelson, Art J.; Ahrenkiel, Richard K.

    1996-01-01

    A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.

  14. Faraday effect of polycrystalline bismuth iron garnet thin film prepared by mist chemical vapor deposition method

    NASA Astrophysics Data System (ADS)

    Yao, Situ; Kamakura, Ryosuke; Murai, Shunsuke; Fujita, Koji; Tanaka, Katsuhisa

    2017-01-01

    We have synthesized polycrystalline thin film composed of a single phase of metastable bismuth iron garnet, Bi3Fe5O12, on a fused silica substrate, one of the most widely utilized substrates in the solid-state electronics, by using mist chemical vapor deposition (mist CVD) method. The phase purity and stoichiometry are confirmed by X-ray diffraction and Rutherford backscattering spectrometry. The resultant thin film shows a small surface roughness of 3.251 nm. The saturation magnetization at room temperature is 1200 G, and the Faraday rotation angle at 633 nm reaches -5.2 deg/μm. Both the magnetization and the Faraday rotation angles are somewhat higher than those of polycrystalline BIG thin films prepared by other methods.

  15. Insights into microstructural evolution and polycrystalline compounds formation from Pd Ge thin films

    NASA Astrophysics Data System (ADS)

    Chen, Zhiwen; Shek, C. H.; Lai, J. K. L.

    2005-04-01

    Polycrystalline Pd-Ge thin films, prepared on freshly cleaved single crystal NaCl (1 0 0) substrate by evaporation techniques, were characterized for their composition, morphologies, and crystalline structure by transmission electron microscopy (TEM). The experimental results indicated that the formation of Pd 2Ge and PdGe compounds dominated at low annealing temperatures, and it also affected the crystallization of amorphous Ge. The reactions of Pd and Ge are sensitively dependent on the annealing temperatures and the thickness ratio of Pd and Ge films. The crystallization of amorphous Ge and the reactions of Pd and Ge are mutually competitive in polycrystalline Pd-Ge thin films. The grain nucleation, growth, and aggregation in Pd-Ge thin films during processing are discussed in terms of the fundamental kinetic processes.

  16. One-Dimensional Fast Transient Simulator for Modeling Cadmium Sulfide/Cadmium Telluride Solar Cells

    NASA Astrophysics Data System (ADS)

    Guo, Da

    Solar energy, including solar heating, solar architecture, solar thermal electricity and solar photovoltaics, is one of the primary alternative energy sources to fossil fuel. Being one of the most important techniques, significant research has been conducted in solar cell efficiency improvement. Simulation of various structures and materials of solar cells provides a deeper understanding of device operation and ways to improve their efficiency. Over the last two decades, polycrystalline thin-film Cadmium-Sulfide and Cadmium-Telluride (CdS/CdTe) solar cells fabricated on glass substrates have been considered as one of the most promising candidate in the photovoltaic technologies, for their similar efficiency and low costs when compared to traditional silicon-based solar cells. In this work a fast one dimensional time-dependent/steady-state drift-diffusion simulator, accelerated by adaptive non-uniform mesh and automatic time-step control, for modeling solar cells has been developed and has been used to simulate a CdS/CdTe solar cell. These models are used to reproduce transients of carrier transport in response to step-function signals of different bias and varied light intensity. The time-step control models are also used to help convergence in steady-state simulations where constrained material constants, such as carrier lifetimes in the order of nanosecond and carrier mobility in the order of 100 cm2/Vs, must be applied.

  17. The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

    NASA Technical Reports Server (NTRS)

    Brown, Ari David; Barrentine, Emily M.; Moseley, Samuel H.; Noroozian, Omid; Stevenson, Thomas

    2016-01-01

    Polycrystalline Nb thin films are extensively used for microwave kinetic inductance detectors (MKIDs) and superconducting transmission line applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the X-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

  18. Floating zone melting of cadmium telluride

    NASA Technical Reports Server (NTRS)

    Chang, Wen-Ming; Regel, L. L.; Wilcox, W. R.

    1992-01-01

    To produce superior crystals of cadmium telluride, floating zone melting in space has been proposed. Techniques required for floating zone melting of cadmium telluride are being developed. We have successfully float-zoned cadmium telluride on earth using square rods. A resistance heater was constructed for forming the molten zone. Evaporation of the molten zone was controlled by adding excess cadmium to the growth ampoule combined with heating of the entire ampoule. An effective method to hold the feed rod was developed. Slow rotation of the growth ampoule was proven experimentally to be necessary to achieve a complete symmetric molten zone. Most of the resultant cylindrical rods were single crystals with twins. Still needed is a suitable automatic method to control the zone length. We tried a fiber optical technique to control the zone length, but experiments showed that application of this technique to automate zone length control is unlikely to be successful.

  19. Floating zone melting of cadmium telluride

    NASA Technical Reports Server (NTRS)

    Chang, Wen-Ming; Regel, L. L.; Wilcox, W. R.

    1992-01-01

    To produce superior crystals of cadmium telluride, floating zone melting in space has been proposed. Techniques required for floating zone melting of cadmium telluride are being developed. We have successfully float-zoned cadmium telluride on earth using square rods. A resistance heater was constructed for forming the molten zone. Evaporation of the molten zone was controlled by adding excess cadmium to the growth ampoule combined with heating of the entire ampoule. An effective method to hold the feed rod was developed. Slow rotation of the growth ampoule was proven experimentally to be necessary to achieve a complete symmetric molten zone. Most of the resultant cylindrical rods were single crystals with twins. Still needed is a suitable automatic method to control the zone length. We tried a fiber optical technique to control the zone length, but experiments showed that application of this technique to automate zone length control is unlikely to be successful.

  20. Polycrystalline thin film materials and devices. Final subcontract report, 16 January 1990--15 January 1993

    SciTech Connect

    Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.; Yokimcus, T.A.

    1993-08-01

    This report describes results and conclusions of the final phase (III) of a three-year research program on polycrystalline thin-film heterojunction solar cells. The research consisted of the investigation of the relationships between processing, materials properties, and device performance. This relationship was quantified by device modeling and analysis. The analysis of thin-film polycrystalline heterojunction solar cells explains how minority-carrier recombination at the metallurgical interface and at grain boundaries can be greatly reduced by the proper doping of the window and absorber layers. Additional analysis and measurements show that the present solar cells are limited by the magnitude of the diode current, which appears to be caused by recombination in the space charge region. Developing an efficient commercial-scale process for fabricating large-area polycrystalline, thin-film solar cells from a research process requires a detailed understanding of the individual steps in making the solar cell, and their relationship to device performance and reliability. The complexities involved in characterizing a process are demonstrated with results from our research program on CuInSe{sub 2}, and CdTe processes.

  1. Thermal pulse damage thresholds in cadmium telluride.

    PubMed

    Slattery, J E; Thompson, J S; Schroeder, J B

    1975-09-01

    A model is presented for predicting the temperature rise in an opaque material during the absorption of a moderately short pulse of energy. Experimental verification of the model employing a pulsed ruby laser and a cadmium telluride plate is described. Two distinct damage thresholds were noted: (1) at modest energy levels plastic deformation occurred, and (2) the higher energies resulted in surface melting.

  2. Polycrystalline Mg{sub 2}Si thin films: A theoretical investigation of their electronic transport properties

    SciTech Connect

    Balout, H.; Boulet, P.; Record, M.-C.

    2015-05-15

    The electronic structures and thermoelectric properties of a polycrystalline Mg{sub 2}Si thin film have been investigated by first-principle density-functional theory (DFT) and Boltzmann transport theory calculations within the constant-relaxation time approximation. The polycrystalline thin film has been simulated by assembling three types of slabs each having the orientation (001), (110) or (111) with a thickness of about 18 Å. The effect of applying the relaxation procedure to the thin film induces disorder in the structure that has been ascertained by calculating radial distribution functions. For the calculations of the thermoelectric properties, the energy gap has been fixed at the experimental value of 0.74 eV. The thermoelectric properties, namely the Seebeck coefficient, the electrical conductivity and the power factor, have been determined at three temperatures of 350 K, 600 K and 900 K with respect to both the energy levels and the p-type and n-type doping levels. The best Seebeck coefficient is obtained at 350 K: the S{sub yy} component of the tensor amounts to about ±1000 μV K{sup −1}, depending on the type of charge carriers. However, the electrical conductivity is much too small which results in low values of the figure of merit ZT. Structure–property relationship correlations based on directional radial distribution functions allow us to tentatively draw some explanations regarding the anisotropy of the electrical conductivity. Finally, the low ZT values obtained for the polycrystalline Mg{sub 2}Si thin film are paralleled with those recently reported in the literature for bulk chalcogenide glasses. - Graphical abstract: Structure of the polycrystalline thin film of Mg{sub 2}Si. - Author-Highlights: • Polycrystalline Mg{sub 2}Si film has been modelled by DFT approach. • Thermoelectric properties have been evaluated by semi-classical Boltzmann theory. • The structure was found to be slightly disordered after relaxation. • The highest

  3. Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    1997-03-01

    Polycrystalline-thin-film thermophotovoltaic (TPV) cells have excellent potential for reducing the cost of TPV generators so as to address the hitherto inaccessible and highly competitive markets such as self-powered gas-fired residential warm air furnaces and energy-efficient electric cars, etc. Recent progress in polycrystalline-thin-film solar cells have made it possible to satisfy the diffusion length and intrinsic junction rectification criteria for TPV cells operating at high fluences. Continuous ranges of direct bandgaps of the ternary and pseudoternary compounds such as Hg1-xCdxTe, Pb1-xCdxTe, Hg1-xZnxTe, and Pb1-xZnxS cover the region of interest of 0.50-0.75 eV for efficient TPV conversion. Other ternary and pseudoternary compounds which show direct bandgaps in most of or all of the 0.50-0.75 eV range are Pb1-xZnxTe, Sn1-xCd2xTe2, Pb1-xCdxSe, Pb1-xZnxSe, and Pb1-xCdxS. Hg1-xCdxTe (with x~0.21) has been studied extensively for infrared detectors. PbTe and Pb1-xSnxTe have also been studied for infrared detectors. Not much work has been carried out on Hg1-xZnxTe thin films. Hg1-xCdxTe and Pb1-xCdxTe alloys cover a wide range of cut-off wavelengths from the far infrared to the near visible. Acceptors and donors are introduced in these materials by excess non-metal (Te) and excess metal (Hg and Pb) respectively. Extrinsic acceptor impurities are Cu, Au, and As while and In and Al are donor impurities. Hg1-xCdxTe thin films have been deposited by isothermal vapor-phase epitaxy (VPE), liquid phase epitaxy (LPE), hot-wall metalorganic chemical vapor deposition (MOCVD), electrodeposition, sputtering, molecular beam epitaxy (MBE), laser-assisted evaporation, and vacuum evaporation with or without hot-wall enclosure. The challenge in the preparation of Hg1-xCdxTe is to provide excess mercury incidence rate, to optimize the deposition parameters for enhanced mercury incorporation, and to achieve the requisite stoichiometry, grain size, and doping. MBE and MOCVD

  4. Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact

    NASA Astrophysics Data System (ADS)

    Mount, Michael; Duarte, Fernanda; Paudel, Naba; Yan, Yanfa; Wang, Weining

    Cadmium Telluride (CdTe) solar cell is one of the most promising thin film solar cells and its highest efficiency has reached 21%. To keep improving the efficiency of CdTe solar cells, a few issues need to be addressed, one of which is the back contact. The back contact of CdTe solar cells are mostly Cu-base, and the problem with Cu-based back contact is that Cu diffuses into the grain boundary and into the CdS/CdTe junction, causing degradation problem at high temperature and under illumination. To continue improving the efficiency of CdTe/CdS solar cells, a good ohmic back contact with high work function and long term stability is needed. In this work, we report our studies on the potential of conducting polymer being used as the back contact of CdTe/CdS solar cells. Conducting polymers are good candidates because they have high work functions and high conductivities, are easy to process, and cost less, meeting all the requirements of a good ohmic back contact for CdTe. In our studies, we used poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) with different conductivities and compared them with traditional Cu-based back contact. It was observed that the CdTe solar cell performance improves as the conductivity of the PEDOT:PSS increase, and the efficiency (9.1%) is approaching those with traditional Cu/Au back contact (12.5%). Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact.

  5. Properties of boron-doped thin films of polycrystalline silicon

    SciTech Connect

    Merabet, Souad

    2013-12-16

    The properties of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped heavily in situ boron-doped with concentration level of around 2×10{sup 20}cm{sup −3} has been studied. Their properties are analyzed using electrical and structural characterization means by four points probe resistivity measurements and X-ray diffraction spectra. The thermal-oxidation process are performed on sub-micron layers of 200nm/c-Si and 200nm/SiO{sub 2} deposited at temperatures T{sub d} ranged between 520°C and 605°C and thermally-oxidized in dry oxygen ambient at 945°C. Compared to the as-grown resistivity with silicon wafers is known to be in the following sequence <ρ{sub 200nm/c−Si}> < <ρ{sub 200nm/SiO2}> and <ρ{sub 520}> < <ρ{sub 605}>. The measure X-ray spectra is shown, that the Bragg peaks are marked according to the crystal orientation in the film deposited on bare substrates (poly/c-Si), for the second series of films deposited on bare oxidized substrates (poly/SiO{sub 2}) are clearly different.

  6. Preparation of nano-polycrystalline WO3 thin films and their solid-state electrochromic display devices.

    PubMed

    Luo, Jianyi; Zeng, Qingguang; Long, Yongbing; Wang, Yi

    2013-02-01

    In this paper, nano-polycrystalline WO3 thin films with the thickness in the range of 100-200 nm have been uniformly prepared on the designed regions of ITO (indium tin oxide) glass substrates by thermal evaporation deposition. Their crystal structures, surface morphologies and uniformities are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM), respectively. The solid-state electrochromic display (ECD) devices based on these nano-polycrystalline WO3 thin films have been also fabricated and have demonstrated to have better performance than normal thin films, including shorter response time, higher contrast, and furthermore, higher stability to keep the colored state without power consumption. These results demonstrate nano-polycrystalline WO3 thin films can be applied to improve the performance of ECD devices, especially suitable to static display.

  7. Mercury Cadmium Telluride Sputtering Research.

    DTIC Science & Technology

    1982-08-28

    Material Research Corporation 8800 sputtering system used to deposit the (Hhl.x,Cdx)Te thin films by the triode-ode is shown in Fig. 1-1.()* rotating...by Dr. Comely with Dr. Esther Krikorian of the Aerospace Corporation , El Segundo, California. 28) Ferrar, R.H., Gillham, C.J., Bartlett, B., Oualch, M...Chen. 14, 44 (1975). 44) Belov, V., Personal Commnication of Dr. Cornely with Dr. Valery Belov, Vice President of Engineering, Infrared Associates, Now

  8. Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1991--15 January 1992

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  9. Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

    NASA Astrophysics Data System (ADS)

    Mitoma, Nobuhiko; Da, Bo; Yoshikawa, Hideki; Nabatame, Toshihide; Takahashi, Makoto; Ito, Kazuhiro; Kizu, Takio; Fujiwara, Akihiko; Tsukagoshi, Kazuhito

    2016-11-01

    The enhancement in electrical conductivity and optical transparency induced by a phase transition from amorphous to polycrystalline in lightly silicon-doped indium oxide (InSiO) thin films is studied. The phase transition caused by simple thermal annealing transforms the InSiO thin films from semiconductors to conductors. Silicon atoms form SiO4 tetrahedra in InSiO, which enhances the overlap of In 5s orbitals as a result of the distortion of InO6 octahedral networks. Desorption of weakly bonded oxygen releases electrons from deep subgap states and enhances the electrical conductivity and optical transparency of the films. Optical absorption and X-ray photoelectron spectroscopy measurements reveal that the phase transition causes a Fermi energy shift of ˜0.2 eV.

  10. Process for producing cadmium sulfide on a cadmium telluride surface

    DOEpatents

    Levi, D.H.; Nelson, A.J.; Ahrenkiel, R.K.

    1996-07-30

    A process is described for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness. 12 figs.

  11. Diffusion and Defect Characterization Studies of Mercury Cadmium Telluride

    DTIC Science & Technology

    1989-08-01

    Mercury Cadmium Telluride" Principal Investigator: D. A. Stevenson Department of Materials Science and Engineering Stanford University Stanford, CA 94305...Include Security Classificatton, Difuson Defect Characterization Studies of Mercury Cadmium Telluride 12 PERSONAL AUTHOR(S) ProfessJL Ddvid A. Stevenson 13a...diffusion and defect chemistry of mercury cadmium telluride (MCT; Hg Cd Te). In this study, we have measured tracer self- diffusion and interdiffusion

  12. Derived reference doses for three compounds used in the photovoltaics industry: Copper indium diselenide, copper gallium diselenide, and cadmium telluride

    SciTech Connect

    Moskowitz, P.D.; Bernholc, N.; DePhillips, M.P.; Viren, J.

    1995-07-06

    Polycrystalline thin-film photovoltaic modules made from copper indium diselenide (CIS), copper gallium diselenide (CGS), and cadmium telluride (CdTe) arc nearing commercial development. A wide range of issues are being examined as these materials move from the laboratory to large-scale production facilities to ensure their commercial success. Issues of traditional interest include module efficiency, stability and cost. More recently, there is increased focus given to environmental, health and safety issues surrounding the commercialization of these same devices. An examination of the toxicological properties of these materials, and their chemical parents is fundamental to this discussion. Chemicals that can present large hazards to human health or the environment are regulated often more strictly than those that are less hazardous. Stricter control over how these materials are handled and disposed can increase the costs associated with the production and use of these modules dramatically. Similarly, public perception can be strongly influenced by the inherent biological hazard that these materials possess. Thus, this report: presents a brief background tutorial on how toxicological data are developed and used; overviews the toxicological data available for CIS, CGS and CdTe; develops ``reference doses`` for each of these compounds; compares the reference doses for these compounds with those of their parents; discusses the implications of these findings to photovoltaics industry.

  13. Structural and magnetic properties of polycrystalline La2NiMnO6 thin films

    NASA Astrophysics Data System (ADS)

    Suresh, Pittala; Laxmi, K. Vijaya; Bhat, Shwetha G.; Kumar, P. S. Anil

    2017-07-01

    Polycrystalline thin films of La2NiMnO6 (LNMO) are deposited successfully on SiO2/Si substrates using pulsed laser deposition technique. Structural characterization using X-ray diffraction confirms the formation of a single phase with P21/n space group. Cross-sectional FE-SEM shows the film thickness ˜195 nm. The deposition temperature and the oxygen pressure played a crucial role determining the crystallization behavior and the magnetic transition temperatures. The ferromagnetic transition temperature is achieved to be ˜277 K by optimizing the deposition conditions.

  14. High photocurrent polycrystalline thin-film CdS/CuInSe2 solar cell

    NASA Astrophysics Data System (ADS)

    Mickelsen, R. A.; Chen, W. S.

    1980-03-01

    A polycrystalline thin-film CdS/CuInSe2 heterojunction solar cell with an efficiency of 5.7% has been prepared using a simultaneous elemental evaporation technique to deposit the CuInSe2 film. The cell's short-circuit current of 31 mA/sq cm under 100 mW/sq cm is the highest ever reported for a 1-sq-cm cell. Heat treatments have been found to improve cell efficiency and to also change the cell I-V and C-V characteristics.

  15. Electron mobility in mercury cadmium telluride

    NASA Technical Reports Server (NTRS)

    Patterson, James D.

    1988-01-01

    A previously developed program, which includes all electronic interactions thought to be important, does not correctly predict the value of electron mobility in mercury cadmium telluride particularly near room temperature. Part of the reason for this discrepancy is thought to be the way screening is handled. It seems likely that there are a number of contributors to errors in the calculation. The objective is to survey the calculation, locate reasons for differences between experiment and calculation, and suggest improvements.

  16. The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

    NASA Technical Reports Server (NTRS)

    Brown, Ari David; Barrentine, Emily M.; Moseley, Samuel H.; Noroozian, Omid; Stevenson, Thomas

    2011-01-01

    Polycrystalline superconducting Nb thin films are extensively used for submillimeter and millimeter transmission line applications and, less commonly, used in microwave kinetic inductance detector (MKID) applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the x-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

  17. Structural and electrical properties of polycrystalline Bi(Fe0.6Mn0.4)O3 thin films

    NASA Astrophysics Data System (ADS)

    Kim, S. W.; Kim, W. J.; Lee, M. H.; Song, T. K.; Do, D.

    2013-12-01

    A 40% Mn-substituted BiFeO3 (BFMO) thin film was deposited on a Pt(111)/Ti/SiO2/Si(100) substrate by using a pulsed laser deposition method. The coexistence of rhombohedral and orthorhombic structures in the BFMO thin film was confirmed by using X-ray diffraction and Raman spectra investigation. The leakage current density of the BFMO thin film was larger than that of a pure polycrystalline BiFeO3 (BFO) thin film. In order to understand the leakage current behaviors, was investigated the leakage current mechanisms. The leakage current mechanism of the BFO thin film was found to be space-charge-limited conduction (SCLC), followed by trap-filled conduction causal by the increasing electric field strength. On the other hand, trap-filled conduction was not observed in the BFMO thin film. A leaky ferroelectric hysteresis loop was observed in the BFMO thin film, but not in the BFO thin film.

  18. Synthesis and characterization of polycrystalline semiconductor Caesium-Tin tri-Iodide thin-films

    NASA Astrophysics Data System (ADS)

    Chen, Zhuo

    This thesis deals with a virtually unexplored semiconductor material CsSnI3 from material synthesis, structural, optical, and electrical characterization to the fabrication and validation of CsSnI3 thin-film solar cells. We started with synthesizing CsSnI3 thin films based on CsI and SnCl2 (or SnI2) by using an apparatus which consists of e-beam and thermal evaporators. The quality of polycrystalline CsSnI3 thin-films were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). Experimental data on XRD and electron diffraction patterns taking from the synthesized thin-films match very well to the theoretically calculated ones based the first principles calculations, confirming that the synthesized CsSnI3 thin-films have an orthorhombic crystal structure. With the well-defined crystal structure, we theoretically studied the electronic band structure of CsSnI3. Extensive optical characterizations of CsSnI3 thin-films were then carried out revealing many extraordinary properties such as 1) direct band gap energy of 1.32 eV at 300 K with its abnormal temperature dependence, 2) extremely high photoluminescence quantum yield, 3) large exciton binding energy, and 4) strong two-phonon assisted excitonic absorption near band edge. These properties are interpreted in terms of the unique electronic and structural properties of CsSnI3. The value of 1.3 eV for the energy band gap of CsSnI3 suggests a unique application of CsSnI3 thin-films on solar cells. This is because this value is right in the small range of the optimal band gaps for the Shockley-Queisser maximum efficiency limit of a single-junction solar cell. A prototype Schottky solar cell was designed, fabricated, and validated. The measured power conversion efficiency (PCE) is 0.9 % which is presently limited by the series and shunt resistance. The improvement strategy on PCE is given at the end of my thesis. In order to make the CsSnI3 thin-film solar cells

  19. Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

    SciTech Connect

    Antesberger, T.; Wassner, T. A.; Jaeger, C.; Algasinger, M.; Kashani, M.; Scholz, M.; Matich, S.; Stutzmann, M.

    2013-05-27

    Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2 Multiplication-Sign 10{sup 17} cm{sup -3} and 3 Multiplication-Sign 10{sup 20} cm{sup -3} for phosphorus and 4 Multiplication-Sign 10{sup 18} cm{sup -3} to 3 Multiplication-Sign 10{sup 19} cm{sup -3} for boron-doped layers, with carrier mobilities up to 90 cm{sup 2}/V s.

  20. Compressive intrinsic stress originates in the grain boundaries of dense refractory polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Magnfält, D.; Fillon, A.; Boyd, R. D.; Helmersson, U.; Sarakinos, K.; Abadias, G.

    2016-02-01

    Intrinsic stresses in vapor deposited thin films have been a topic of considerable scientific and technological interest owing to their importance for functionality and performance of thin film devices. The origin of compressive stresses typically observed during deposition of polycrystalline metal films at conditions that result in high atomic mobility has been under debate in the literature in the course of the past decades. In this study, we contribute towards resolving this debate by investigating the grain size dependence of compressive stress magnitude in dense polycrystalline Mo films grown by magnetron sputtering. Although Mo is a refractory metal and hence exhibits an intrinsically low mobility, low energy ion bombardment is used during growth to enhance atomic mobility and densify the grain boundaries. Concurrently, the lateral grain size is controlled by using appropriate seed layers on which Mo films are grown epitaxially. The combination of in situ stress monitoring with ex situ microstructural characterization reveals a strong, seemingly linear, increase of the compressive stress magnitude on the inverse grain size and thus provides evidence that compressive stress is generated in the grain boundaries of the film. These results are consistent with models suggesting that compressive stresses in metallic films deposited at high homologous temperatures are generated by atom incorporation into and densification of grain boundaries. However, the underlying mechanisms for grain boundary densification might be different from those in the present study where atomic mobility is intrinsically low.

  1. Interfacial reactions between amorphous W-Si thin films and polycrystalline overlayers

    SciTech Connect

    Thomas, R.E.; Perepezko, J.H.; Wiley, J.D.

    1985-01-01

    Interactions between amorphous metal thin films and either a substrate or an overlayer can limit their effectiveness as diffusion barriers. We have found in previous studies that Au and Al polycrystalline thin films in contact with amorphous W-Si lowers the crystallization temperature of the a-(W-Si) by at least 100C. In contrast Cu and Mo have no apparent effect on the stability of the amorphous layer. The mechanisms leading to premature crystallization are not well understood. Amorphous W/sub .72/Si/sub .28/ was deposited by dc sputtering onto single crystal Si substrates. Overlayers of Al were then evaporated onto the W-Si. Using Auger electron spectroscopy depth profiling coupled with cross-section TEM, we have studied interfacial reactions between the amorphous layer and polycrystalline Al. Auger profiling results show that in the case of Al overlayers, W and Si diffuse out of the a-(W-Si) into the Al where WAl/sub 12/ forms. These results can be explained in the context of three binary diffusion couples, W-Si, W-Al, Al-Si, and the individual interactions associated with these couples.

  2. Suppressing light reflection from polycrystalline silicon thin films through surface texturing and silver nanostructures

    SciTech Connect

    Akhter, Perveen; Huang, Mengbing Kadakia, Nirag; Spratt, William; Malladi, Girish; Bakhru, Hassarum

    2014-09-21

    This work demonstrates a novel method combining ion implantation and silver nanostructures for suppressing light reflection from polycrystalline silicon thin films. Samples were implanted with 20-keV hydrogen ions to a dose of 10¹⁷/cm², and some of them received an additional argon ion implant to a dose of 5×10¹⁵ /cm² at an energy between 30 and 300 keV. Compared to the case with a single H implant, the processing involved both H and Ar implants and post-implantation annealing has created a much higher degree of surface texturing, leading to a more dramatic reduction of light reflection from polycrystalline Si films over a broadband range between 300 and 1200 nm, e.g., optical reflection from the air/Si interface in the AM1.5 sunlight condition decreasing from ~30% with an untextured surface to below 5% for a highly textured surface after post-implantation annealing at 1000°C. Formation of Ag nanostructures on these ion beam processed surfaces further reduces light reflection, and surface texturing is expected to have the benefit of diminishing light absorption losses within large-size (>100 nm) Ag nanoparticles, yielding an increased light trapping efficiency within Si as opposed to the case with Ag nanostructures on a smooth surface. A discussion of the effects of surface textures and Ag nanoparticles on light trapping within Si thin films is also presented with the aid of computer simulations.

  3. Compressive intrinsic stress originates in the grain boundaries of dense refractory polycrystalline thin films

    SciTech Connect

    Magnfält, D. Sarakinos, K.; Fillon, A.; Abadias, G.; Boyd, R. D.; Helmersson, U.

    2016-02-07

    Intrinsic stresses in vapor deposited thin films have been a topic of considerable scientific and technological interest owing to their importance for functionality and performance of thin film devices. The origin of compressive stresses typically observed during deposition of polycrystalline metal films at conditions that result in high atomic mobility has been under debate in the literature in the course of the past decades. In this study, we contribute towards resolving this debate by investigating the grain size dependence of compressive stress magnitude in dense polycrystalline Mo films grown by magnetron sputtering. Although Mo is a refractory metal and hence exhibits an intrinsically low mobility, low energy ion bombardment is used during growth to enhance atomic mobility and densify the grain boundaries. Concurrently, the lateral grain size is controlled by using appropriate seed layers on which Mo films are grown epitaxially. The combination of in situ stress monitoring with ex situ microstructural characterization reveals a strong, seemingly linear, increase of the compressive stress magnitude on the inverse grain size and thus provides evidence that compressive stress is generated in the grain boundaries of the film. These results are consistent with models suggesting that compressive stresses in metallic films deposited at high homologous temperatures are generated by atom incorporation into and densification of grain boundaries. However, the underlying mechanisms for grain boundary densification might be different from those in the present study where atomic mobility is intrinsically low.

  4. Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer

    NASA Astrophysics Data System (ADS)

    Antipov, V. V.; Kukushkin, S. A.; Osipov, A. V.

    2017-02-01

    An epitaxial 1-3-μm-thick cadmium telluride film has been grown on silicon with a buffer silicon carbide layer using the method of open thermal evaporation and condensation in vacuum for the first time. The optimum substrate temperature was 500°C at an evaporator temperature of 580°C, and the growth time was 4 s. In order to provide more qualitative growth of cadmium telluride, a high-quality 100-nm-thick buffer silicon carbide layer was previously synthesized on the silicon surface using the method of topochemical substitution of atoms. The ellipsometric, Raman, X-ray diffraction, and electron-diffraction analyses showed a high structural perfection of the CdTe layer in the absence of a polycrystalline phase.

  5. Microstructural and Magnetic Properties of Polycrystalline and Epitaxial Permalloy (NICKEL(80) IRON(20) Multilayered Thin Films.

    NASA Astrophysics Data System (ADS)

    Hashim, Imran

    Permalloy rm (Ni_{80 }Fe_{20}) thin films are of great scientific and technological interest because of their unique soft magnetic properties, and applications to magnetic recording. Chapter 1 provides an introduction to magnetic and magnetotransport properties of rm Ni_{80}Fe_{20} thin films, and how the film microstructure affects these properties. Chapter 2 discusses the instrumentation used for thin film fabrication, and for magnetic and structural characterization. Further details of instrumentation are discussed in Appendix A. Typically, the rm Ni_{80 }Fe_{20} films for magnetoresistive applications are capped with a refractory metal thin film such as Ta to prevent its oxidation and corrosion. We investigated the interdiffusion kinetics of polycrystalline Ta/rm Ni_{80}Fe_ {20} thin films and found that for 400 <= T <= 600 ^circC, there was significant grain-boundary interdiffusion which drastically affected soft magnetic properties of rm Ni_ {80}Fe_{20}. In Chapter 3, we present details of the microstructural evolution of these multilayers and the subsequent effects on their magnetic properties. An alternate method for reducing grain-boundary scattering would be to fabricate grain-boundary free epitaxial rm Ni_{80}Fe_{20 } films. The epitaxy of rm Ni _{80}Fe_{20} on MgO, NaCl and Cu had been demonstrated by investigators as early as the 60s. However, none of these substrates are available with as good atomic flatness as Si wafers. Following reports of epitaxial growth of Cu on Si, we proposed using it as a seed layer for growing rm Ni_ {80}Fe_{20} epitaxially on Si. However, there were conflicting reports of Cu epitaxy on Si, as some investigators claimed that Cu epitaxy on Si in UHV was not possible. We were able to resolve some of these controversies (see Chapter 4 for details) and thus fabricate epitaxial rm Ni_{80 }Fe_{20} films on Cu/Si. Chapter 5 examines the effect of the lattice mismatch between Cu and rm Ni_{80}Fe _{20} and the subsequent strain, on

  6. Brief review of cadmium telluride-based photovoltaic technologies

    NASA Astrophysics Data System (ADS)

    Başol, Bülent M.; McCandless, Brian

    2014-01-01

    Cadmium telluride (CdTe) is the most commercially successful thin-film photovoltaic technology. Development of CdTe as a solar cell material dates back to the early 1980s when ˜10% efficient devices were demonstrated. Implementation of better quality glass, more transparent conductive oxides, introduction of a high-resistivity transparent film under the CdS junction-partner, higher deposition temperatures, and improved Cl-treatment, doping, and contacting approaches yielded >16% efficient cells in the early 2000s. Around the same time period, use of a photoresist plug monolithic integration process facilitated the demonstration of the first 11% efficient module. The most dramatic advancements in CdTe device efficiencies were made during the 2013 to 2014 time frame when small-area cell conversion efficiency was raised to 20% range and a champion module efficiency of 17% was reported. CdTe technology is attractive in terms of its limited life-cycle greenhouse gas and heavy metal emissions, small carbon footprint, and short energy payback times. Limited Te availability is a challenge for the growth of this technology unless Te utilization rates are greatly enhanced along with device efficiencies.

  7. Impact of universal mobility law on polycrystalline organic thin-film transistors

    NASA Astrophysics Data System (ADS)

    Raja, Munira; Donaghy, David; Myers, Robert; Eccleston, Bill

    2012-10-01

    We have developed novel analytical models for polycrystalline organic thin-film transistor (OTFT) by employing new concepts on the charge carrier injection to polysilicon thin-films. The models, also incorporate the effect of contact resistance associated with the poor ohmic nature of the contacts. The drain current equations of the OTFT, both in the quasi-diffusion and quasi-drift regimes, predict temperature dependencies on essential material and device parameters. Interestingly, under the drift regime, the polycrystalline OTFT model reveals similar power dependencies on the applied voltages, to those of purely disordered model developed by utilizing the universal mobility law (UML). Such similarities are not thought to be coincidental since the effect of gate voltage on surface potential is influenced by the Fermi level pinning in the grain boundary. Nonetheless, the best fits on the data of 6,13-bis(tri-isopropylsilylethynyl) OTFTs are attained with the proposed polycrystalline rather than the disordered model, particularly at low gate voltages where the diffusive component is dominant. Moreover, in order to understand the effect of grain boundaries, we devise a relationship for the dependency of the effective mobility on carrier concentration, assuming a crystalline region to be in direct contact with a disordered region. Interestingly, we find a similar dependency as the UML in purely disordered materials, which further signifies the conduction to be limited by the grain boundaries. Subsequently, an analytical model for the variation of the effective mobility with gate voltage is established. Such models are vital in assisting the development of more accurate designs of the novel organic circuits.

  8. Characterization of polycrystalline VO2 thin film with low phase transition temperature fabricated by high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Tiegui; Wang, Langping; Wang, Xiaofeng; Zhang, Yufen

    2016-04-01

    VO2 is a unique material that undergoes a reversible phase transformation around 68∘C. Currently, applications of VO2 on smart windows are limited by its high transition temperature. In order to reduce the temperature, VO2 thin film was fabricated on quartz glass substrate by high power impulse magnetron sputtering with a modulated pulsed power. The phase transition temperature has been reduced to as low as 32∘C. In addition, the VO2 film possesses a typical metal-insulator transition. X-ray diffraction and selected area electron diffraction patterns reveal that an obvious lattice distortion has been formed in the as-deposited polycrystalline VO2 thin film. X-ray photoelectron spectroscopy proves that oxygen vacancies have been formed in the as-deposited thin film, which will induce a lattice distortion in the VO2 thin film.

  9. Overview and Challenges of Thin Film Solar Electric Technologies

    SciTech Connect

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  10. Thin film polycrystalline silicon: Promise and problems in displays and solar cells

    SciTech Connect

    Fonash, S.J.

    1995-08-01

    Thin film polycrystalline Si (poly-Si) with its carrier mobilities, potentially good stability, low intragrain defect density, compatibility with silicon processing, and ease of doping activation is an interesting material for {open_quotes}macroelectronics{close_quotes} applications such as TFTs for displays and solar cells. The poly-Si films needed for these applications can be ultra-thin-in the 500{Angstrom} to 1000{Angstrom} thickness range for flat panel display TFTs and in the 4{mu}m to 10{mu}m thickness range for solar cells. Because the films needed for these microelectronics applications can be so thin, an effective approach to producing the films is that of crystallizing a-Si precursor material. Unlike cast materials, poly-Si films made this way can be produced using low temperature processing. Unlike deposited poly-Si films, these crystallized poly-Si films can have grain widths that are much larger than the film thickness and almost atomically smooth surfaces. This thin film poly-Si crystallized from a-Si precursor films, and its promise and problems for TFTs and solar cells, is the focus of this discussion.

  11. Electrical and thermal properties of polycrystalline Si thin films with phononic crystal nanopatterning for thermoelectric applications

    SciTech Connect

    Nomura, Masahiro; Kage, Yuta; Müller, David; Moser, Dominik; Paul, Oliver

    2015-06-01

    Electrical and thermal properties of polycrystalline Si thin films with two-dimensional phononic patterning were investigated at room temperature. Electrical and thermal conductivities for the phononic crystal nanostructures with a variety of radii of the circular holes were measured to systematically investigate the impact of the nanopatterning. The concept of phonon-glass and electron-crystal is valid in the investigated electron and phonon transport systems with the neck size of 80 nm. The thermal conductivity is more sensitive than the electrical conductivity to the nanopatterning due to the longer mean free path of the thermal phonons than that of the charge carriers. The values of the figure of merit ZT were 0.065 and 0.035, and the enhancement factors were 2 and 4 for the p-doped and n-doped phononic crystals compared to the unpatterned thin films, respectively, when the characteristic size of the phononic crystal nanostructure is below 100 nm. The greater enhancement factor of ZT for the n-doped sample seems to result from the strong phonon scattering by heavy phosphorus atoms at the grain boundaries.

  12. Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films

    SciTech Connect

    Kumar, Avishek E-mail: dalapatig@imre.a-star.edu.sg; Law, Felix; Widenborg, Per I.; Dalapati, Goutam K. E-mail: dalapatig@imre.a-star.edu.sg; Subramanian, Gomathy S.; Tan, Hui R.; Aberle, Armin G.

    2014-11-01

    n-type polycrystalline silicon (poly-Si) films with very large grains, exceeding 30 μm in width, and with high Hall mobility of about 71.5 cm{sup 2}/V s are successfully prepared by the solid-phase crystallization technique on glass through the control of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The effect of this gas flow ratio on the electronic and structural quality of the n-type poly-Si thin film is systematically investigated using Hall effect measurements, Raman microscopy, and electron backscatter diffraction (EBSD), respectively. The poly-Si grains are found to be randomly oriented, whereby the average area weighted grain size is found to increase from 4.3 to 18 μm with increase of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The stress in the poly-Si thin films is found to increase above 900 MPa when the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio is increased from 0.025 to 0.45. Finally, high-resolution transmission electron microscopy, high angle annular dark field-scanning tunneling microscopy, and EBSD are used to identify the defects and dislocations caused by the stress in the fabricated poly-Si films.

  13. Optical and electrical properties of polycrystalline and amorphous Al-Ti thin films

    NASA Astrophysics Data System (ADS)

    Canulescu, S.; Borca, C. N.; Rechendorff, K.; Davidsdóttir, S.; Pagh Almtoft, K.; Nielsen, L. P.; Schou, J.

    2016-04-01

    The structural, optical, and transport properties of sputter-deposited Al-Ti thin films have been investigated as a function of Ti alloying with a concentration ranging from 2% to 46%. The optical reflectivity of Al-Ti films at visible and near-infrared wavelengths decreases with increasing Ti content. X-ray absorption fine structure measurements reveal that the atomic ordering around Ti atoms increases with increasing Ti content up to 20% and then decreases as a result of a transition from a polycrystalline to amorphous structure. The transport properties of the Al-Ti films are influenced by electron scattering at the grain boundaries in the case of polycrystalline films and static defects, such as anti-site effects and vacancies in the case of the amorphous alloys. The combination of Ti having a real refractive index (n) comparable with the extinction coefficient (k) and Al with n much smaller than k allows us to explore the parameter space for the free-electron behavior in transition metal-Al alloys. The free electron model, applied for the polycrystalline Al-Ti films with Ti content up to 20%, leads to an optical reflectance at near infrared wavelengths that scales linearly with the square root of the electrical resistivity.

  14. Magnetoresistance in polycrystalline and epitaxial Fe1-xCoxSi thin films

    NASA Astrophysics Data System (ADS)

    Porter, N. A.; Creeth, G. L.; Marrows, C. H.

    2012-08-01

    Thin films of Fe1-xCoxSi were grown using molecular beam epitaxy on Si(111). These 20-nm-thick films, with compositions x=0 or 0.5, were produced by two methods: the first produced large (111)-textured crystallites of the B20 phase; the second produced phase-pure B20 (111) epilayers. The lattice mismatch with the substrate causes biaxial tensile strain in the layers, greater in the epilayers, that distorts the (111)-oriented material to a rhombohedral form. Magnetotransport measurements show that a combination of additional scattering arising from crystal grain boundaries and strain-free polycrystalline films results in a higher resistivity than for the epitaxial films. Magnetometry for x=0.5 suggests an increase in the ordering temperature in strained films relative to the polycrystalline films of 15±4 K. Moreover, the characteristic linear magnetoresistance, typical of bulk single-crystal material of this composition, is retained in the polycrystalline film but reduced in the epitaxial film. While the bulk properties of these materials are reproduced qualitatively, there are small quantitative modifications, due to the strain, to properties such as band gap, Curie temperature, and magnetoresistance.

  15. Broadening of optical transitions in polycrystalline CdS and CdTe thin films

    SciTech Connect

    Li Jian; Chen Jie; Collins, R. W.

    2010-11-01

    The dielectric functions {epsilon} of polycrystalline CdS and CdTe thin films sputter deposited onto Si wafers were measured from 0.75 to 6.5 eV by in situ spectroscopic ellipsometry. Differences in {epsilon} due to processing variations are well understood using an excited carrier scattering model. For each sample, a carrier mean free path {lambda} is defined that is found to be inversely proportional to the broadening of each of the band structure critical points (CPs) deduced from {epsilon}. The rate at which broadening occurs with {lambda}{sup -1} is different for each CP, enabling a carrier group speed {upsilon}{sub g} to be identified for the CP. With the database for {upsilon}{sub g}, {epsilon} can be analyzed to evaluate the quality of materials used in CdS/CdTe photovoltaic heterojunctions.

  16. Inducing conductivity in polycrystalline ZnO1-x thin films through space charge doping

    NASA Astrophysics Data System (ADS)

    Paradisi, Andrea; Biscaras, Johan; Shukla, Abhay

    2017-09-01

    We induce ultra-high carrier charge density in polycrystalline zinc oxide thin films on glass with a thickness of few tens of nm, achieving carrier concentrations as high as 2.2 ×1014 cm-2, well beyond the Ioffe-Regel limit for an insulator-metal transition in two dimensions. The sheet resistance is consequently lowered by up to 5 orders of magnitude to about 2 k Ω/◻ without alteration of transparency thanks to our space charge doping technique. Electrostatic doping of such a large band-gap semiconductor is quite challenging, and a high surface potential is required in order to induce conductivity at the interface. Through magneto-transport measurements performed at low temperature on the doped films, we show that both weak localization and weak anti-localization of charge carriers can be observed and that these quantum interference phenomena can be modulated by the carrier concentration and temperature.

  17. Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Sreenivas Puli, Venkata; Kumar Pradhan, Dhiren; Gollapudi, Sreenivasulu; Coondoo, Indrani; Panwar, Neeraj; Adireddy, Shiva; Chrisey, Douglas B.; Katiyar, Ram S.

    2014-11-01

    Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO3 (BFO) thin films have been deposited on Pt/TiO2/SiO2/Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d33) ~94 pm/V at 0.6 MV/cm. High dielectric constant ~900 and low dielectric loss ~0.25 were observed at room temperature. M-H loops have shown relatively high saturation magnetization ~35 emu/cm3 at a maximum field of H ~20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films.

  18. Activation of ion-implanted polycrystalline silicon thin films prepared on glass substrates

    SciTech Connect

    So, Byoung-Soo; Bae, Seung-Muk; You, Yil-Hwan; Kim, Young-Hwan; Hwang, Jin-Ha

    2012-10-15

    Phosphorous-implanted polycrystalline Si thin films were subjected to thermal annealing between 300 °C and 650 °C. The thermal activation was monitored electrically and structurally using Hall measurements, Raman spectroscopy, UV–visible spectrophotometry, and transmission electron microscopy. Charge transport information was correlated to the corresponding structural evolution in thermal activation. Phosphorous-implanted activation is divided into short-range ordering at low temperatures and long-range ordering at high temperatures, with the boundary between low and high temperatures set at 425 °C. Short-range ordering allows for significant increase in electronic concentration through substitution of P for Si. Higher temperatures are attributed to long-range ordering, thereby increasing electronic mobility.

  19. Suppression of Self-Heating in Low-Temperature Polycrystalline Silicon Thin-Film Transitors

    NASA Astrophysics Data System (ADS)

    Hashimoto, Shinichiro; Uraoka, Yukiharu; Fuyuki, Takashi; Morita, Yukihiro

    2007-04-01

    We investigated the structure of low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) focusing on their immunity against thermal degradation. Their operating temperature was simply dependent on input power and independent of bias voltage, such as drain or gate bias voltage. As for the structures, self-heating was suppressed by increasing the number of splitting gates and the interval between poly-Si layers owing to effective heat diffusion along the gate width. For multi gate-type TFTs, increasing the number of splitting gates was effective in suppressing self-heating; however, increasing the interval between gates was not effective. We proposed a new offset-type structure. Using this new structure, we were able to demonstrate the effective suppression of degradation caused by self-heating.

  20. Advances in thin-film solar cells for lightweight space photovoltaic power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Bailey, Sheila G.; Flood, Dennis J.

    1989-01-01

    The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuIn Se2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuIn Se2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

  1. Advances in thin-film solar cells for lightweight space photovoltaic power

    SciTech Connect

    Landis, G.A.; Bailey, S.G.; Flood, D.J.

    1989-01-01

    The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuInSe2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuInSe2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

  2. Fractal features of CdTe thin films grown by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-12-01

    Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  3. X-ray microbeam diffraction study of strain in polycrystalline aluminum thin films

    NASA Astrophysics Data System (ADS)

    Moyer, Laura E.

    Thermally induced strains in polycrystalline Al films on glass and single crystal Si substrates have been examined on a grain-by-grain basis by x-ray microbeam diffraction. The crystallographic orientation and the deviatoric strain tensor, epsilon*ij, were determined for each measurement location by white beam Laue diffraction. From grain orientation mapping and strain tensor measurements, information was obtained about the distributions of strains for similarly oriented grains and about strain variations within single grains. Grain size, texture, and misorientation correlations with residual strains were also examined. Strains during thermal cycling and strain relaxation at room temperature were compared to model calculations. The mechanisms involved in these calculations during thermal cycling and during room temperature relaxation were studied. The grain boundary diffusivity for Coble creep used in the model calculations was also studied and recalculations were made that provide a better fit of the model calculations to the experimental data. The type of information gathered in this study may be useful in developing and testing theories for intergrain effects in strain evolution in polycrystals. It was concluded from this study that many factors affect the mechanical behavior of thin films during thermal cycling and during room temperature relaxation, including grain size, texture, and grain orientation. The nature of the film-substrate interface may also affect the behavior of the films. The model calculations and parameters used in this study were not successful in predicting quantitatively thin film mechanical behavior. Microdiffraction measurements reveal that the strains on the inter- and intra-granular level are very different than the average strain in a film.

  4. Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

    NASA Astrophysics Data System (ADS)

    Bhopal, Muhammad Fahad; Lee, Doo Won; Lee, Soo Hong

    2016-09-01

    Thin-film polycrystalline silicon ( pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm-1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

  5. Fabrication and characterization of low temperature polycrystalline silicon thin film transistors

    NASA Astrophysics Data System (ADS)

    Krishnan, Anand Thiruvengadathan

    2000-10-01

    The proliferation of devices with built-in displays, such as personal digital assistants and cellular phones has created a demand for rugged light-weight displays. Polymeric substrates could be suited for these applications, and they offer the possibility of flexible displays also. However, driver circuitry needs to be integrated in the display if the cost is to be reduced. Low temperature (<350°C) polycrystalline silicon (poly-Si) thin film transistors, if developed, offer driver circuitry integration during pixel transistor fabrication on top of flexible substrates. This thesis addresses several issues related to the fabrication of thin film transistors at low temperatures on glass substrates. A high-density plasma (electron cyclotron resonance (ECR)) based approach was adopted for deposition of thin films. A process for deposition of n-type doped silicon (n-type doped Si) at T < 350°C and having resistivity <1 ohm/cm has been developed. Intrinsic poly-Si was deposited under different conditions of microwave power, RF bias and deposition times. The properties of n-type doped Si and intrinsic poly-Si were correlated with the structure and the deposition conditions. A novel TFT structure has been proposed and implemented in this work. This top gate TFT structure uses n-type doped Si and utilizes only two masks and one alignment step. There are no critical etch steps and good interface quality could be obtained even without post-processing hydrogenation as the poly-Si surface was not exposed to air before deposition of the gate dielectric. TFTs using this top gate structure were fabricated with no process step exceeding 340°C electrode temperature (surface temperature <300°C). These TFTs show ON/OFF ratios in excess of 105. Their sub-threshold swing is ˜0.5 V/decade and mobility is 1--10 cm2/V-s. Several TFTs were also fabricated using alternative dielectrics such as oxide deposited from tetramethyl silane in an RFPECVD chamber and silicon nitride deposited in

  6. A multiscale coupled finite-element and phase-field framework to modeling stressed grain growth in polycrystalline thin films

    SciTech Connect

    Jamshidian, M.; Thamburaja, P.; Rabczuk, T.

    2016-12-15

    A previously-developed finite-deformation- and crystal-elasticity-based constitutive theory for stressed grain growth in cubic polycrystalline bodies has been augmented to include a description of excess surface energy and grain-growth stagnation mechanisms through the use of surface effect state variables in a thermodynamically-consistent manner. The constitutive theory was also implemented into a multiscale coupled finite-element and phase-field computational framework. With the material parameters in the constitutive theory suitably calibrated, our three-dimensional numerical simulations show that the constitutive model is able to accurately predict the experimentally-determined evolution of crystallographic texture and grain size statistics in polycrystalline copper thin films deposited on polyimide substrate and annealed at high-homologous temperatures. In particular, our numerical analyses show that the broad texture transition observed in the annealing experiments of polycrystalline thin films is caused by grain growth stagnation mechanisms. - Graphical abstract: - Highlights: • Developing a theory for stressed grain growth in polycrystalline thin films. • Implementation into a multiscale coupled finite-element and phase-field framework. • Quantitative reproduction of the experimental grain growth data by simulations. • Revealing the cause of texture transition to be due to the stagnation mechanisms.

  7. Influence of thickness on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Dhaka, M. S.

    2016-02-01

    This paper presents the influence of thickness on physical properties of polycrystalline CdTe thin films. The thin films of thickness 450 nm, 650 nm and 850 nm were deposited employing thermal vacuum evaporation technique on glass and indium tin oxide (ITO) coated glass substrates. The physical properties of these as-grown thin films were investigated employing the X-ray diffraction (XRD), source meter, UV-Vis spectrophotometer, scanning electron microscopy (SEM) coupled with energy dispersive spectroscopy (EDS). The structural analysis reveals that the films have zinc-blende cubic structure and polycrystalline in nature with preferred orientation (111). The structural parameters like lattice constant, interplanar spacing, grain size, strain, dislocation density and number of crystallites per unit area are calculated. The average grain size and optical band gap are found in the range 15.16-21.22 nm and 1.44-1.63 eV respectively and observed to decrease with thickness. The current-voltage characteristics show that the electrical conductivity is observed to decrease with thickness. The surface morphology shows that films are free from crystal defects like pin holes and voids as well as homogeneous and uniform. The EDS patterns show the presence of cadmium and tellurium elements in the as grown films. The experimental results reveal that the film thickness plays significant role on the physical properties of as-grown CdTe thin films and higher thickness may be used as absorber layer to solar cells applications.

  8. Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures.

    PubMed

    Antonuk, L E; Koniczek, M; McDonald, J; El-Mohri, Y; Zhao, Q; Behravan, M

    2008-01-01

    An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring how the 1/f, shot and thermal noise components of poly-Si TFTs, determined from current noise power spectral density measurements, as well as through calculation, can be used to assist in the development of imagers incorporating pixel amplification circuits based on such transistors.

  9. GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE.

    PubMed

    Ikejiri, Keitaro; Ishizaka, Fumiya; Tomioka, Katsuhiro; Fukui, Takashi

    2013-03-22

    The growth mechanism of GaAs nanowires (NWs) grown on polycrystalline silicon (poly-Si) thin films using selective-area metalorganic vapor-phase epitaxy was investigated. Wire structures were selectively grown in the mask openings on a poly-Si substrate. The appearance ratio of wire structures strongly depended on the growth conditions and deposition temperature of the poly-Si substrate. Evaluation of the grown shapes and growth characteristics revealed that GaAs NWs grown on a poly-Si substrate have the same growth mechanism as conventional GaAs NWs grown on a single-crystalline GaAs or Si substrate. Experiments showed that the wire structure yield can be improved by increasing the Si grain size and/or increasing the Si deposition temperature. The growth model proposed for understanding NW growth on poly-Si is based on the mask opening size, the Si grain size, and the growth conditions. The ability to control the growth mode is promising for the formation of NWs with complex structures on poly-Si thin layers.

  10. Scaling behavior of moisture-induced grain degradation in polycrystalline hybrid perovskite thin films

    SciTech Connect

    Wang, Qi; Chen, Bo; Liu, Ye; Deng, Yehao; Bai, Yang; Dong, Qingfeng; Huang, Jinsong

    2017-01-01

    The stability of perovskite solar cells has shown a huge variation with respect to the film process and film morphology, while the underlining mechanism for the morphology-dependent degradation of the perovskite film has remained elusive. Herein, we report a scaling behavior of moisture-induced grain degradation in polycrystalline CH3NH3PbI3 films. The degradation rates of CH3NH3PbI3 films in moisture were shown to be sensitive to the grain sizes. The duration that was needed for different films to degrade by the same percent showed a linear relationship with the grain size, despite the fact that the films were formed by five different deposition methods. This scaling behavior can be explained by the degradation along the in-plane direction, which is initiated at the grain boundary (GB). The GBs of CH3NH3PbI3 films consist of an amorphous intergranular layer, which allows quick diffusion of moisture into the perovskite films. It was found that thermal annealing induced surface self-passivation plays a critical role in stabilizing the surfaces of thin films and single crystals by reducing the moisture-sensitive methylammonium ions at the surface. Finally, the determination of the scaling behavior of grain degradation highlights the importance of stabilizing the GBs to improve the stability of perovskite solar cells.

  11. Designing novel thin film polycrystalline solar cells for high efficiency: sandwich CIGS and heterojunction perovskite

    NASA Astrophysics Data System (ADS)

    Wang, Tianyue; Chen, Jiewei; Wu, Gaoxiang; Song, Dandan; Li, Meicheng

    2017-01-01

    Heterojunction and sandwich architectures are two new-type structures with great potential for solar cells. Specifically, the heterojunction structure possesses the advantages of efficient charge separation but suffers from band offset and large interface recombination; the sandwich configuration is favorable for transferring carriers but requires complex fabrication process. Here, we have designed two thin-film polycrystalline solar cells with novel structures: sandwich CIGS and heterojunction perovskite, referring to the advantages of the architectures of sandwich perovskite (standard) and heterojunction CIGS (standard) solar cells, respectively. A reliable simulation software wxAMPS is used to investigate their inherent characteristics with variation of the thickness and doping density of absorber layer. The results reveal that sandwich CIGS solar cell is able to exhibit an optimized efficiency of 20.7%, which is much higher than the standard heterojunction CIGS structure (18.48%). The heterojunction perovskite solar cell can be more efficient employing thick and doped perovskite films (16.9%) than these typically utilizing thin and weak-doping/intrinsic perovskite films (9.6%). This concept of structure modulation proves to be useful and can be applicable for other solar cells. Project supported by the National High-Tech R&D Program of China (No. 2015AA034601), the National Natural Science Foundation of China (Nos. 91333122, 61204064, 51202067, 51372082, 51402106, 11504107), the Ph.D. Programs Foundation of Ministry of Education of China (Nos. 20120036120006, 20130036110012), the Par-Eu Scholars Program, and the Fundamental Research Funds for the Central Universities.

  12. Scaling behavior of moisture-induced grain degradation in polycrystalline hybrid perovskite thin films

    DOE PAGES

    Wang, Qi; Chen, Bo; Liu, Ye; ...

    2017-01-01

    The stability of perovskite solar cells has shown a huge variation with respect to the film process and film morphology, while the underlining mechanism for the morphology-dependent degradation of the perovskite film has remained elusive. Herein, we report a scaling behavior of moisture-induced grain degradation in polycrystalline CH3NH3PbI3 films. The degradation rates of CH3NH3PbI3 films in moisture were shown to be sensitive to the grain sizes. The duration that was needed for different films to degrade by the same percent showed a linear relationship with the grain size, despite the fact that the films were formed by five different depositionmore » methods. This scaling behavior can be explained by the degradation along the in-plane direction, which is initiated at the grain boundary (GB). The GBs of CH3NH3PbI3 films consist of an amorphous intergranular layer, which allows quick diffusion of moisture into the perovskite films. It was found that thermal annealing induced surface self-passivation plays a critical role in stabilizing the surfaces of thin films and single crystals by reducing the moisture-sensitive methylammonium ions at the surface. Finally, the determination of the scaling behavior of grain degradation highlights the importance of stabilizing the GBs to improve the stability of perovskite solar cells.« less

  13. Local impedance imaging of boron-doped polycrystalline diamond thin films

    SciTech Connect

    Zieliński, A.; Ryl, J.; Burczyk, L.; Darowicki, K.

    2014-09-29

    Local impedance imaging (LII) was used to visualise surficial deviations of AC impedances in polycrystalline boron-doped diamond (BDD). The BDD thin film electrodes were deposited onto the highly doped silicon substrates via microwave plasma-enhanced CVD. The studied boron dopant concentrations, controlled by the [B]/[C] ratio in plasma, ranged from 1 × 10{sup 16} to 2 × 10{sup 21} atoms cm{sup −3}. The BDD films displayed microcrystalline structure, while the average size of crystallites decreased from 1 to 0.7 μm with increasing [B]/[C] ratios. The application of LII enabled a direct and high-resolution investigation of local distribution of impedance characteristics within the individual grains of BDD. Such an approach resulted in greater understanding of the microstructural control of properties at the grain level. We propose that the obtained surficial variation of impedance is correlated to the areas of high conductance which have been observed at the grain boundaries by using LII. We also postulate that the origin of high conductivity is due to either preferential boron accumulation, the presence of defects, or sp{sup 2} regions in the intragrain regions. The impedance modulus recorded by LII was in full agreement with the bulk impedance measurements. Both variables showed a decreasing trend with increasing [B]/[C] ratios, which is consistent with higher boron incorporation into BDD film.

  14. On-Current Modeling of Polycrystalline Silicon Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Gupta, Navneet; Tyagi, B. P.

    2005-01-01

    We propose an on-current (above threshold voltage) model of polycrystalline silicon thin-film transistors (poly-Si TFTs). The model includes the study of the effect of trap state density, poly-Si inversion layer thickness and temperature on the TFT characteristics. Effective carrier mobility and I-V characteristics are described by considering the mechanism of capture and release of carriers at grain boundary trap states and the thermionic emission theory. It is found that at low as well as at high doping concentrations, the effective carrier mobility (µeff) increases with increasing temperature whereas a dip is observed at intermediate doping concentration. At very high and very low doping concentration the effect of temperature on the mobility is found to be almost negligible. Calculations reveal that effective carrier mobility and drain current increase as the gate bias increases and are larger for a lower trap state density. The calculated value of activation energy decreases as the gate bias increases and is larger for a larger poly-Si inversion layer thickness. A comparison between the present predictions and the experimental results shows reasonably good agreement.

  15. Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors

    NASA Astrophysics Data System (ADS)

    Liu, Kai; Liu, Yuan; Liu, Yu-Rong; En, Yun-Fei; Li, Bin

    2017-07-01

    Channel mobility in the p-type polycrystalline silicon thin film transistors (poly-Si TFTs) is extracted using Hoffman method, linear region transconductance method and multi-frequency C-V method. Due to the non-negligible errors when neglecting the dependence of gate-source voltage on the effective mobility, the extracted mobility results are overestimated using linear region transconductance method and Hoffman method, especially in the lower gate-source voltage region. By considering of the distribution of localized states in the band-gap, the frequency independent capacitance due to localized charges in the sub-gap states and due to channel free electron charges in the conduction band were extracted using multi-frequency C-V method. Therefore, channel mobility was extracted accurately based on the charge transport theory. In addition, the effect of electrical field dependent mobility degradation was also considered in the higher gate-source voltage region. In the end, the extracted mobility results in the poly-Si TFTs using these three methods are compared and analyzed.

  16. Reactive sputtering of YBaCuO thin films on polycrystalline zirconia substrates: optimization results

    NASA Astrophysics Data System (ADS)

    Degardin, A.; Bodin, C.; Dolin, C.; Kreisler, A.

    1998-01-01

    In situ elaboration of YBaCuO thin films, on polycrystalline yttria doped zirconia substrates, has been optimized. A reactive sputtering model has been developed and the electrical conductivity of the substrate has been studied as a function of temperature and doping. The J_c value of ≈ 3× 10^4~A/cm^2 at 77 K, measured on microbridges, is among the best reported in the literature for this substrate type. L'élaboration in situ de films minces d'YBaCuO, sur substrats de zircone polycristalline dopée à l'oxyde d'yttrium, a été optimisée en développant un modèle de pulvérisation réactive et en étudiant la conductivité électrique du substrat en fonction du dopage et de la température. La valeur de J_c ≈ 3× 10^4 ~A/cm^2 à 77 K, mesurée sur microponts, se situe parmi les meilleures citées dans la littérature pour ce type de substrat.

  17. Local impedance imaging of boron-doped polycrystalline diamond thin films

    NASA Astrophysics Data System (ADS)

    Zieliński, A.; Bogdanowicz, R.; Ryl, J.; Burczyk, L.; Darowicki, K.

    2014-09-01

    Local impedance imaging (LII) was used to visualise surficial deviations of AC impedances in polycrystalline boron-doped diamond (BDD). The BDD thin film electrodes were deposited onto the highly doped silicon substrates via microwave plasma-enhanced CVD. The studied boron dopant concentrations, controlled by the [B]/[C] ratio in plasma, ranged from 1 × 1016 to 2 × 1021 atoms cm-3. The BDD films displayed microcrystalline structure, while the average size of crystallites decreased from 1 to 0.7 μm with increasing [B]/[C] ratios. The application of LII enabled a direct and high-resolution investigation of local distribution of impedance characteristics within the individual grains of BDD. Such an approach resulted in greater understanding of the microstructural control of properties at the grain level. We propose that the obtained surficial variation of impedance is correlated to the areas of high conductance which have been observed at the grain boundaries by using LII. We also postulate that the origin of high conductivity is due to either preferential boron accumulation, the presence of defects, or sp2 regions in the intragrain regions. The impedance modulus recorded by LII was in full agreement with the bulk impedance measurements. Both variables showed a decreasing trend with increasing [B]/[C] ratios, which is consistent with higher boron incorporation into BDD film.

  18. Local electrical conduction in polycrystalline La-doped BiFeO₃ thin films.

    PubMed

    Zhou, Ming-Xiu; Chen, Bo; Sun, Hai-Bin; Wan, Jian-Guo; Li, Zi-Wei; Liu, Jun-Ming; Song, Feng-Qi; Wang, Guang-Hou

    2013-06-07

    Local electrical conduction behaviors of polycrystalline La-doped BiFeO3 thin films have been investigated by combining conductive atomic force microscopy and piezoelectric force microscopy. Nanoscale current measurements were performed as a function of bias voltage for different crystal grains. Completely distinct conducting processes and resistive switching effects were observed in the grain boundary and grain interior. We have revealed that local electric conduction in a grain is dominated by both the grain boundary and ferroelectric domain, and is closely related to the applied electric field and the as-grown state of the grain. At lower voltages the electrical conduction is dominated by the grain boundary and is associated with the redistribution of oxygen vacancies in the grain boundary under external electric fields. At higher voltages both the grain boundary and ferroelectric domain are responsible for the electrical conduction of grains, and the electrical conduction gradually extends from the grain boundary into the grain interior due to the extension of the ferroelectric domain towards the grain interior. We have also demonstrated that the conduction dominated by the grain boundary exhibits a much small switching voltage, while the conduction of the ferroelectric domain causes a much high switching voltage in the grain interior.

  19. Polycrystalline Ni thin films on nanopatterned Si substrates: From highly conformal to nonconformal anisotropic growth

    NASA Astrophysics Data System (ADS)

    Keller, Adrian; Peverini, Luca; Grenzer, Jörg; Kovacs, György J.; Mücklich, Arndt; Facsko, Stefan

    2011-07-01

    The growth of polycrystalline Ni thin films on nanorippled Si templates is investigated in situ by grazing incidence small angle x-ray scattering as well as ex situ by atomic force microscopy and cross-sectional transmission electron microscopy. The templates have been fabricated by low-energy ion sputtering which leads to the spontaneous formation of a periodic ripple pattern with about 35 nm periodicity and about 3 nm peak-to-peak height. Highly conformal growth of the Ni film is observed under normal incidence deposition with the film surface perfectly replicating the substrate morphology up to a film thickness of at least 120 nm. Grazing incidence deposition perpendicular to the ripple orientation leads to the formation of one-dimensional nanowires on one side of the ripples due to geometrical shadowing. At a film thickness of about 10 nm, a transition to anisotropic columnar growth with rapidly decreasing conformity is observed. In this regime, the nanowires act as growth seeds for the columns and further geometrical shadowing leads to a film consisting of rows of tilted columns.

  20. Ferroelectric and structural properties of stress-constrained and stress-relaxed polycrystalline BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Nakashima, Seiji; Ricinschi, Dan; Park, Jung Min; Kanashima, Takeshi; Fujisawa, Hironori; Shimizu, Masaru; Okuyama, Masanori

    2009-03-01

    The stress influence of the structural and ferroelectric properties of polycrystalline BiFeO3 (BFO) thin films has been investigated using a membrane substrate for relaxing stress. Reciprocal space mapping (RSM) measurement has been performed to confirm the stress dependence of the crystal structure of polycrystalline BFO thin films on the Pt (200 nm)/TiO2 (50 nm)/SiO2 (600 nm)/Si (625 μm) substrate (stress-constrained BFO film) and the Pt (200 nm)/TiO2 (50 nm)/SiO2 (600 nm)/Si (15 μm) membrane substrate (stress-relaxed BFO film). The BFO thin films prepared by pulsed laser deposition were polycrystalline and mainly exhibit a texture with (001) and (110) plane orientations. From the RSM results, the crystal structure of the (001)-oriented domain changes from Pm monoclinic to Cm monoclinic or to R3c rhombohedral due to stress relaxation. Moreover, at room temperature as well as at 150 K, remanent polarization (Pr) increases and double coercive field (2Ec) decreases (in the latter case from 88 to 94 μC/cm2 and from 532 to 457 kV/cm, respectively) due to relaxing stress. The enhancement of ferroelectricity is attributed to the crystal structural deformation and/or transition and angle change between the polarization direction and film plane.

  1. Recovery Act : Near-Single-Crystalline Photovoltaic Thin Films on Polycrystalline, Flexible Substrates

    SciTech Connect

    Venkat Selvamanickam; Alex Freundlich

    2010-11-29

    III-V photovoltaics have exhibited efficiencies above 40%, but have found only a limited use because of the high cost of single crystal substrates. At the other end of the spectrum, polycrystalline and amorphous thin film solar cells offer the advantage of low-cost fabrication, but have not yielded high efficiencies. Our program is based on single-crystalline-like thin film photovoltaics on polycrystalline substrates using biaxially-textured templates made by Ion Beam-Assisted Deposition (IBAD). MgO templates made by IBAD on flexible metal substrate have been successfully used for epitaxial growth of germanium films. In spite of a 4.5% lattice mismatch, heteroepitaxial growth of Ge was achieved on CeO2 that was grown on IBAD MgO template. Room temperature optical bandgap of the Ge films was identified at 0.67 eV indicating minimal residual strain. Refraction index and extinction coefficient values of the Ge films were found to match well with that measured from a reference Ge single crystal. GaAs has been successfully grown epitaxially on Ge on metal substrate by molecular beam epitaxy. RHEED patterns indicate self annihilation of antiphase boundaries and the growth of a single domain GaAs. The GaAs is found to exhibit strong photoluminescence signal and, an existence of a relatively narrow (FWHM~20 meV) band-edge excitons measured in this film indicates a good optoelectronic quality of deposited GaAs. While excellent epitaxial growth has been achieved in GaAs on flexible metal substrates, the defect density of the films as measured by High Resolution X-ray Diffraction and etch pit experiments showed a high value of 5 * 10^8 per cm^2. Cross sectional transmission electron microscopy of the multilayer architecture showed concentration of threading dislocations near the germanium-ceria interface. The defect density was found decrease as the Ge films were made thicker. The defects appear to originate from the MgO layer presumably because of large lattice mismatches

  2. Organic solar cells based on liquid crystalline and polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Yoo, Seunghyup

    This dissertation describes the study of organic thin-film solar cells in pursuit of affordable, renewable, and environmentally-friendly energy sources. Particular emphasis is given to the molecular ordering found in liquid crystalline or polycrystalline films as a way to leverage the efficiencies of these types of cells. Maximum efficiencies estimated based on excitonic character of organic solar cells show power conversion efficiencies larger than 10% are possible in principle. However, their performance is often limited due to small exciton diffusion lengths and poor transport properties which may be attributed to the amorphous nature of most organic semiconductors. Discotic liquid crystal (DLC) copper phthalocyanine was investigated as an easily processible building block for solar cells in which ordered molecular arrangements are enabled by a self-organization in its mesophases. An increase in photocurrent and a reduction in series resistance have been observed in a cell which underwent an annealing process. X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements suggest that structural and morphological changes induced after the annealing process are related to these improvements. In an alternative approach, p-type pentacene thin films prepared by physical vapor deposition were incorporated into heterojunction solar cells with C60 as n-type layers. Power conversion efficiencies of 2.7% under broadband illumination (350--900 nm) with a peak external quantum efficiency of 58% have been achieved with the broad spectral coverage across the visible spectrum. Analysis using an exciton diffusion model shows this efficient carrier generation is mainly due to the large exciton diffusion length of pentacene films. Joint XRD and AFM studies reveal that the highly crystalline nature of pentacene films can account for the observed large exciton diffusion length. In addition, the electrical characteristics are studied as a function of light intensity using

  3. Structural and optical analysis of 60Co gamma-irradiated thin films of polycrystalline Ga10Se85Sn5

    NASA Astrophysics Data System (ADS)

    Ahmad, Shabir; Asokan, K.; Shahid Khan, Mohd.; Zulfequar, M.

    2015-12-01

    The present study focuses on the effects of gamma irradiation on structural and optical properties of polycrystalline Ga10Se85Sn5 thin films with a thickness of ∼300 nm deposited by the thermal evaporation technique on cleaned glass substrates. X-ray diffraction patterns of the investigated thin films show that crystallite growth occurs in the orthorhombic phase structure. The surface study carried out by using the scanning electron microscope (SEM) confirms that the grain size increases with gamma irradiation. The optical parameters were estimated from optical transmission spectra data measured from a UV-vis-spectrophotometer in the wavelength range of 200-1100 nm. The refractive index dispersion data of the investigated thin films follow the single oscillator model. The estimated values of static refractive index n0, oscillator strength Ed, zero frequency dielectric constant ε0, optical conductivity σoptical and the dissipation factor increases after irradiation, while the single oscillator energy Eo decreases after irradiation. It was found that the value of the optical band gap of the investigated thin films decreases and the corresponding absorption coefficient increases continuously with an increase in the dose of gamma irradiation. This post irradiation changes in the values of optical band gap and absorption coefficient were interpreted in terms of the bond distribution model.

  4. Impact of thermal annealing on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Dhaka, M. S.

    2016-06-01

    A study on impact of post-deposition thermal annealing on the physical properties of CdTe thin films is undertaken in this paper. The thin films of thickness 500 nm were grown on ITO and glass substrates employing thermal vacuum evaporation followed by post-deposition thermal annealing in air atmosphere within low temperature range 150-350 °C. These films were subjected to the XRD, UV-Vis NIR spectrophotometer, source meter, SEM coupled with EDS and AFM for structural, optical, electrical and surface topographical analysis respectively. The diffraction patterns reveal that the films are having zinc-blende cubic structure with preferred orientation along (111) and polycrystalline in nature. The crystallographic parameters are calculated and discussed in detail. The optical band gap is found in the range 1.48-1.64 eV and observed to decrease with thermal annealing. The current-voltage characteristics show that the CdTe films exhibit linear ohmic behavior. The SEM studies show that the as-grown films are homogeneous, uniform and free from defects. The AFM studies reveal that the surface roughness of films is observed to increase with annealing. The experimental results reveal that the thermal annealing has significant impact on the physical properties of CdTe thin films and may be used as absorber layer to the CdTe/CdS thin films solar cells.

  5. Impact of annealing on physical properties of e-beam evaporated polycrystalline CdO thin films for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Purohit, Anuradha; Chander, S.; Dhaka, M. S.

    2017-04-01

    An impact of annealing on the physical properties of polycrystalline CdO thin films is carried out in this study. CdO thin films of thickness 650 nm were fabricated on glass and indium tin oxide (ITO) substrates employing e-beam evaporation technique. The pristine thin films were annealed in air atmosphere at 250 °C, 400 °C and 550 °C for one hour followed by investigation of structural, optical, electrical and morphological properties along with elemental composition using X-ray diffraction (XRD), UV-Vis spectrophotometer, Fourier transform infrared (FTIR) spectrometer, source meter, scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS), respectively. XRD patterns confirmed the polycrystalline nature and cubic structure (with space group Fm 3 bar m) of the films. The crystallographic parameters are calculated and found to be influenced by the post-air annealing treatment. The optical study shows that direct band gap is ranging from 1.98 eV to 2.18 eV and found to be decreased with post-annealing. The refractive index and optical conductivity are also increased with annealing temperature. The current-voltage characteristics show ohmic behaviour of the annealed films. The surface morphology is observed to be improved with annealing and grain-size is increased as well as EDS spectrum confirmed the presence of cadmium (Cd) and oxygen (O) in the deposited films.

  6. Rapid Deposition Technology Holds the Key for the World's Largest Manufacturer of Thin-Film Solar Modules (Fact Sheet)

    SciTech Connect

    Not Available

    2013-08-01

    First Solar, Inc. has been collaborating with NREL since 1991, advancing its thin-film cadmium telluride solar technology to grow from a startup company to become one of the world's largest manufacturers of solar modules, and the world's largest manufacturer of thin-film solar modules.

  7. Buffer layers for deposition of superconducting YBaCuO thin film on polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Beetz, Charles P.; Cui, G. J.; Lincoln, B. A.; Kirlin, Peter S.

    1992-09-01

    In an attempt to combine the properties of high temperature superconductors with the high thermal conductivity and low specific heat of diamond, we have explored the deposition of in- situ YBa(subscript 2)Cu(subscript 3)O(subscript 7-(delta) ) (YBCO) superconducting films on polycrystalline diamond thin films. We demonstrate for the first time superconducting YBCO films on diamond employing multiple layer buffer layer systems. Three different composite buffer layer systems were explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si(subscript 3)N(subscript 4)/YSZ/YBCO, and (3) Diamond/SiO(subscript 2)/YSZ/YBCO. Adherent thin Zr films were deposited by dc sputtering on the diamond films at 450 to 820 degree(s)C. The yttria stabilized zirconia (YSZ) was deposited by reactive RF sputtering at 680 to 750 degree(s)C. The Si(subscript 3)N(subscript 4) and SiO(subscript 2) were also deposited by on-axis RF sputtering at 400 to 700 degree(s)C. YBCO films were grown on the buffer layers by off-axis RF sputtering at substrate temperatures between 690 degree(s)C and 750 degree(s)C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric far IR detectors and paves the way for the use of HTSC as a high frequency interconnect metallization on thick diamond film based multichip modules.

  8. Height-resolved quantification of microstructure and texture in polycrystalline thin films using TEM orientation mapping.

    PubMed

    Aebersold, A Brian; Alexander, Duncan T L; Hébert, Cécile

    2015-12-01

    A method is presented for the quantitative investigation of microstructure and texture evolution in polycrystalline thin films based on in-plane automated crystal orientation mapping in transmission electron microscopy, from the substrate up. To demonstrate the method we apply it to the example of low pressure metal-organic chemical vapor deposited ZnO layers. First, orientation mapping is applied to standard cross-section and plan-view transmission electron microscopy samples of films, illustrating how plan-view samples both reduce the occurrence of grain overlap that is detrimental to reliable orientation mapping and also improve sampling statistics compared to cross-sections. Motivated by this, orientation mapping has been combined with a double-wedge method for specimen preparation developed by Spiecker et al. (2007) [1], which creates a large area plan-view sample that traverses the film thickness. By measuring >10,000 grains in the film, the resulting data give access to grain size, orientation and misorientation distributions in function of height above the substrate within the film, which are, in turn, the inputs necessary for quantitative assessment of growth models and simulations. The orientation data are directly related to microstructural images, allowing correlation of orientations with in-plane and out-of-plane grain sizes and shapes. The spatial correlation of the entire data set gives insights into previously unnoticed growth mechanisms such as the presence of renucleation or preferred misorientations. Finally, the data set can be used to guide targeted, local studies by other transmission electron microscopy techniques. This is demonstrated by the site-specific application of nano-beam diffraction to validate the presence of coherent [21̄1̄0]/(011̄3) twin boundaries first suggested by the orientation mapping.

  9. Polycrystalline silicon thin films by metal-induced growth: Formation mechanisms, characterization and applications

    NASA Astrophysics Data System (ADS)

    Guliants, Elena A.

    2000-10-01

    A method of producing a polycrystalline silicon thin film on a foreign substrate without subsequent annealing has been developed. Thermally evaporated 5--100nm thick Ni films served as prelayers for magnetron sputtered 0.5--2mum thick Si films. A continuous, uniform film was obtained as a result of metal induced growth (MIG) of polysilicon during low temperature (below 600°C) deposition. The interaction of a fine-grained metallic Ni with an atomic Si provided by a sputtering gun results in the formation of NiSi2 at the Ni-Si interface. The Ni disilicide provides the nucleation sites for the epitaxial Si crystal growth due to only 0.4% lattice mismatch with Si. As a result, the polycrystalline silicon film exhibits a columnar structure with length of the grains equal to the film thickness and cross-sectional diameter of up to 600nm. The Ni prelayer thickness is found to appreciably influence both the Si grain size and resistivity. The best results were obtained for the films deposited on a 25nm thick Ni prelayer. These films show the resistivity values of 2--3 x 103O-cm and an activation energy of 0.02--0.03eV. The carrier concentrations are 5 x 1015 cm-3 and 3 x 1016 cm-3 for n-type and p-type films, respectively. The carrier mobility computed for n and p-type polysilicon films has respective values of 0.4 cm2/V-s and 1.6 cm2/V-s. The carrier lifetime of ˜11mus and the diffusion length of ˜3.4 mum indicated good electrical properties which make the film potentially applicable to fabrication of various microelectronic devices, where Ni silicide at the bottom of the film provides a satisfactory back ohmic contact. The Schottky diodes fabricated on the basis of the MIG-Si films of both n and p-types show a rectifying ratio of up to 107. A 1mum thick p-n junction diode reveals the dark IF/IR ratio of 104 and a reasonable value of photocurrent. In addition, the polysilicon properties are not strongly affected by a substrate when the latter is relatively smooth and

  10. Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB₂ thin films

    DOE PAGES

    Tan, Teng; Wolak, M. A.; Acharya, Narendra; ...

    2015-04-01

    For potential applications in superconducting RF cavities, we have investigated the properties of polycrystalline MgB₂ films, including the thickness dependence of the lower critical field Hc₁. MgB₂ thin films were fabricated by hybrid physical-chemical vapor deposition on (0001) SiC substrate either directly (for epitaxial films) or with a MgO buffer layer (for polycrystalline films). When the film thickness decreased from 300 nm to 100 nm, Hc₁ at 5 K increased from around 600 Oe to 1880 Oe in epitaxial films and to 1520 Oe in polycrystalline films. The result is promising for using MgB₂/MgO multilayers to enhance the vortex penetrationmore » field.« less

  11. Role of Polycrystalline Thin-Film PV Technologies in Competitive PV Module Markets: Preprint

    SciTech Connect

    von Roedern, B.; Ullal, H. S.

    2008-05-01

    This paper discusses the developments in thin-film PV technologies and provides an outlook on future commercial module efficiencies achievable based on today's knowledge about champion cell performance.

  12. Mechanical properties of free-standing polycrystalline metallic thin films and multilayers

    NASA Astrophysics Data System (ADS)

    Huang, Haibo

    1998-11-01

    A laser-diffraction tensile tester and a balance-beam creep apparatus were improved and applied to the study of free standing polycrystalline thin films with a strong $ texture. Studied are electron beam deposited Ag, Cu, Al films, and Ag/Cu multilayers consisting of alternating Ag and Cu layers with 1:1 thickness ratio. All films have a total thickness around 3 mum. In tensile testing, a thin polymeric two-dimensional diffraction grid was deposited on the film surface by microlithographic techniques. Local strains were measured from the relative displacements of two diffracted laser spots. This allows determination of Young's modulus, Poisson's ratio and, since large strains can be measured, the yield stress, ultimate tensile strength and fracture strain. The average values of the Young moduli and Poisson ratios, determined from hundreds of measurements, are 63 GPa and 0.42 for Ag, 102 GPa and 0.37 for Cu, 57 GPa and 0.41 for Al, and 87.5 GPa and 0.38 for Ag/Cu multilayers. In all cases, the Young moduli are about 20% lower than the values calculated from the literature data and are independent of the bilayer repeat length, λ , in the Ag/Cu multilayers. No "supermodulus" effect was observed at small values of λ . An anelastic model was proposed to explain the low Young moduli, the hysteresis loops on the stress-strain curves, and a 4.3 pm 0.2 GPa/decade strain rate dependence of the Young modulus in Al. The ductility of the Ag/Cu multilayers decreases when λ is reduced. For λ 80 nm, the yield stress increases linearly with λsp{{-}alpha} where alpha = 0.244. The results are compared to the predictions of Hall-Petch-type models. In creep testing, steady-state creep rates were measured on Cu films as a function of stress and temperature. In the high temperature-low stress region (100-650spcircC, 5-90 MPa), the creep rate is described by dot\\varepsilon =A{\\cdot}sigmasp{n} exp\\{{-}Q/kT\\}. A core-diffusion controlled dislocation climb model was proposed to

  13. Effect of nickel silicide gettering on metal-induced crystallized polycrystalline-silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Lee, Yong Hee; Joo, Seung Ki

    2017-06-01

    Low-temperature polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated via metal-induced crystallization (MIC) are attractive candidates for use in active-matrix flat-panel displays. However, these exhibit a large leakage current due to the nickel silicide being trapped at the grain boundaries of the poly-Si. We reduced the leakage current of the MIC poly-Si TFTs by developing a gettering method to remove the Ni impurities using a Si getter layer and natively-formed SiO2 as the etch stop interlayer. The Ni trap state density (Nt) in the MIC poly-Si film decreased after the Ni silicide gettering, and as a result, the leakage current of the MIC poly-Si TFTs decreased. Furthermore, the leakage current of MIC poly-Si TFTs gradually decreased with additional gettering. To explain the gettering effect on MIC poly-Si TFTs, we suggest an appropriate model. He received the B.S. degree in School of Advanced Materials Engineering from Kookmin University, Seoul, South Korea in 2012, and the M.S. degree in Department of Materials Science and Engineering from Seoul National University, Seoul, South Korea in 2014. He is currently pursuing the Ph.D. degree with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and top-gate polycrystalline-silicon thin-film transistors. He received the M.S. degree in innovation technology from Ecol Polytechnique, Palaiseau, France in 2013. He is currently pursuing the Ph.D. degree with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and bottom-gate polycrystalline-silicon thin-film transistors. He is currently pursuing the integrated M.S and Ph.D course with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and copper

  14. Transition between Efros–Shklovskii and Mott variable-range hopping conduction in polycrystalline germanium thin films

    NASA Astrophysics Data System (ADS)

    Li, Zhaoguo; Peng, Liping; Zhang, Jicheng; Li, Jia; Zeng, Yong; Luo, Yuechuan; Zhan, Zhiqiang; Meng, Lingbiao; Zhou, Minjie; Wu, Weidong

    2017-03-01

    We report on the electrical transport properties of polycrystalline germanium thin films which are grown by the DC magnetron sputtering method. The temperature dependent resistance of seven devices are measured from 290 K down to 10 K. The thermal excitation model dominating the transport properties at the high temperature regime (above ∼60 K) is demonstrated and the low temperature electron transport is governed by the variable-range hopping (VRH) mechanism. Moreover, we observed a transition from Efros–Shklovskii to Mott VRH at ∼25 K over the entire VRH conduction regime, which is well described by a universal scaling law.

  15. Ambient condition laser writing of graphene structures on polycrystalline SiC thin film deposited on Si wafer

    SciTech Connect

    Yue, Naili; Zhang, Yong; Tsu, Raphael

    2013-02-18

    We report laser induced local conversion of polycrystalline SiC thin-films grown on Si wafers into multi-layer graphene, a process compatible with the Si based microelectronic technologies. The conversion can be achieved using a 532 nm CW laser with as little as 10 mW power, yielding {approx}1 {mu}m graphene discs without any mask. The conversion conditions are found to vary with the crystallinity of the film. More interestingly, the internal structure of the graphene disc, probed by Raman imaging, can be tuned with varying the film and illumination parameters, resembling either the fundamental or doughnut mode of a laser beam.

  16. Ambient condition laser writing of graphene structures on polycrystalline SiC thin film deposited on Si wafer

    NASA Astrophysics Data System (ADS)

    Yue, Naili; Zhang, Yong; Tsu, Raphael

    2013-02-01

    We report laser induced local conversion of polycrystalline SiC thin-films grown on Si wafers into multi-layer graphene, a process compatible with the Si based microelectronic technologies. The conversion can be achieved using a 532 nm CW laser with as little as 10 mW power, yielding ˜1 μm graphene discs without any mask. The conversion conditions are found to vary with the crystallinity of the film. More interestingly, the internal structure of the graphene disc, probed by Raman imaging, can be tuned with varying the film and illumination parameters, resembling either the fundamental or doughnut mode of a laser beam.

  17. Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1990--15 January 1991

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.

    1991-11-01

    Results and conclusion of Phase I of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe{sub 2} and CdTe solar cells. The kinetics of the formation of CuInSe{sub 2} by selenization with hydrogen selenide was investigated and a CuInSe{sub 2}/CdS solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe{sub 2} films and a cell efficiency of 7%. Detailed investigations of the open circuit voltage of CuInSe{sub 2} solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe{sub 2} thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe{sub 2} is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10% can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm{sup 2} are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.

  18. Applications of Polycrystalline Silicon-Germanium Thin Films in Metal-Oxide Technologies.

    NASA Astrophysics Data System (ADS)

    King, Tsu-Jae

    Polycrystalline silicon (poly-Si) is an important component of silicon integrated-circuit (IC) technology and is currently used in a wide range of device applications. The fundamental properties of silicon-germanium (Si _{rm 1-x}Ge_ {rm x}) indicate that poly-Si _{rm 1-x}Ge_ {rm x} can be a favorable alternative to poly-Si in many of these applications. Since the melting point of Si_{rm 1-x}Ge _{rm x} is lower than that of Si, physical phenomena controlling fabrication processes such as deposition, crystallization, and dopant activation occur at lower temperatures for Si_ {rm 1-x}Ge_{ rm x} than for Si. Thus, lower process temperatures can be used for poly-Si_{ rm 1-x}Ge_{rm x}, so that it is preferable to poly-Si for various applications in technologies which have limited thermal-budget allowances. In this work, a deposition technology for poly-Si_{rm 1 -x}Ge_{rm x} films has been developed, and the physical and electrical properties of these films have been characterized. Two important potential applications of poly-Si_ {rm 1-x}Ge_{ rm x} films in metal-oxide-semiconductor (MOS) technologies have been investigated: first, the application as a gate-electrode material; second, the application as a thin-film transistor (TFT) channel material. The resistivity of heavily doped p-type (p^+) poly -Si_{rm 1-x}Ge _{rm x} is lower than that of comparably doped poly-Si, and its work function can be easily modified by adjusting its germanium content. These properties make p^+ poly-Si _{rm 1-x}Ge_ {rm x} a very attractive candidate for the gate-electrode material in submicrometer complementary MOS (CMOS) technologies. p-channel TFTs fabricated in poly-Si_{rm 1-x}Ge _{rm x} exhibit well -behaved device characteristics and may be suitable for high-density static memory (SRAM) and three-dimensionally integrated circuit applications. n- and p-channel poly -Si_{rm 1-x}Ge _{rm x} TFTs have been successfully fabricated using conventional microelectronic fabrication techniques

  19. Structure and magnetic properties of polycrystalline iron-platium and cobalt-platinum thin films for high density recording media

    NASA Astrophysics Data System (ADS)

    Jeong, Sangki

    2002-09-01

    The goal of this project was to investigate and increase the feasibility of use of FePt and CoPt polycrystalline thin films as high-density recording media, with a focus on targeting perpendicular recording. Understanding the atomic ordering process, developing the proper texture and small grains, lowering the processing temperature and optimizing magnetic properties were the main subjects of this thesis work. In this thesis, nano-structured polycrystalline high anisotropy thin films have been fabricated and characterized. Polycrystalline CoPt and FePt films exhibit perpendicular anisotropy after an annealing process only when their thickness is less than 5 nm. High temperature annealing is still required to obtain an atomically ordered phase with nearly full ordering. The ordering phase transformation is a discontinuous transformation that yields an inhomogeneous microstructure where significant amount of FCC phase remains, unless a long time annealing process is performed. To lower the atomic ordering temperature, an in-situ ordering process has been performed and the various underlayer structures with an MgO seed layer, have been deposited and investigated. Thin films with thicknesses below 10 nm exhibit perpendicular anisotropy with an average grain size in the range of 10--15 nm in this film. FePt [001] textured films using Pt/Ag seeding layer exhibit lower annealing temperature than FePt/MgO films, while other Ag or Cr seedlayers do not produce faster ordering kinetics. Based on the detailed analysis of nanostructure of FePt thin films, it has been learned that FCC disordered nanoclusters remains in the ordered grains. Detailed observation of magnetic properties and nanostructure by HRTEM suggests that, though a thermally activated component of the switching is observed, the low value of coercivity can be attributed predominantly to reversal processes associated with defect related domain nucleation. We postulate that the nucleation occurs in less ordered

  20. From front contact to back contact in cadmium telluride/cadmium sulfide solar cells: Buffer layer and interfacial layer

    NASA Astrophysics Data System (ADS)

    Roussillon, Yann

    Cadmium telluride (CdTe) polycrystalline thin film solar cells, with their near optimum direct band-gap of 1.4 eV matching almost perfectly the sun radiation spectrum, are a strong contender as a less expensive alternative, among photovoltaic materials, than the more commonly used silicon-based cells. Polycrystalline solar cells are usually deposited over large areas. Such devices often exhibit strong fluctuations (nonuniformities) in electronic properties, which originate from deposition and post-deposition processes, and are detrimental to the device performance. Therefore their effects need to be constrained. A new approach in this work was, when a CdS/CdTe solar cell is exposed to light and immersed in a proper electrolyte, fluctuations in surface potential can drive electrochemical reactions which result in a nonuniform interfacial layer that could balance the original nonuniformity. This approach improved the device efficiency for CdS/CdTe photovoltaic devices from 1--3% to 11--12%. Cadmium sulfide (CdS), used as a window layer and heterojunction partner to CdTe, is electrically inactive and absorb light energies above its band-gap of 2.4 eV. Therefore, to maximize the device efficiency, a thin US layer needs to be used. However, more defects, such as pinholes, are likely to be present in the film, leading to shunts. A resistive transparent layer, called buffer layer, is therefore deposited before CdS. A key observation was that the open-circuit voltage (Voc) for cells made using a buffer layer was high, around 800 mV, similar to cells without buffer layer after Cu doping. The standard p-n junction theory cannot explain this phenomena, therefore an alternative junction mechanism, similar to metal-insulator-semiconductor devices, was developed. Furthermore, alternative Cu-free back-contacts were used in conjunction with a buffer layer. The Voc of the devices was found to be dependent of the back contact used. This change occurs as the back-contact junction

  1. Enhanced electrical properties at boundaries including twin boundaries of polycrystalline CdTe thin-film solar cells.

    PubMed

    Li, H; Liu, X X; Lin, Y S; Yang, B; Du, Z M

    2015-05-07

    The effect of grain boundaries (GBs), in particular twin boundaries (TBs), on CdTe polycrystalline thin films is studied by conductive atomic force microscopy (C-AFM), electron-beam-induced current (EBIC), scanning Kelvin probe microscopy (SKPM), electron backscatter diffraction (EBSD), and scanning transmission electron microscopy (STEM). Four types of CdTe grains with various densities of {111} Σ3 twin boundaries (TBs) are found in Cl-treated CdTe polycrystalline thin films: (1) grains having multiple {111} Σ3 TBs with a low angle to the film surface; (2) grains having multiple {111} Σ3 TBs parallel to the film surfaces; (3) small grains on a scale of not more than 500 nm, composed of Cd, Cl, Te, and O; and (4) CdTe grains with not more than two {111} Σ3 TBs. Grain boundaries (including TBs) exhibit enhanced current transport phenomena. However, the {111} Σ3 TB is much more beneficial to micro-current transport. The enhanced current transport can be explained by the lower electron potential at GBs (including TBs) than the grain interiors (GIs). Our results open new opportunities for enhancing solar cell performances by controlling the grain boundaries, and in particular TBs.

  2. Nanomechanical study of amorphous and polycrystalline ALD HfO2 thin films

    Treesearch

    K. Tapily; J.E. Jakes; D. Gu; H. Baumgart; A.A. Elmustafa

    2011-01-01

    Thin films of hafnium oxide (HfO2) were deposited by atomic layer deposition (ALD). The structural properties of the deposited films were characterised by transmission electron microscopy (TEM) and X-ray diffraction (XRD). We investigated the effect of phase transformations induced by thermal treatments on the mechanical properties of ALD HfO

  3. Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

    PubMed Central

    Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

    2012-01-01

    nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10. The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing

  4. Ferroelectric properties of lead-free polycrystalline CaBi{sub 2}Nb{sub 2}O{sub 9} thin films on glass substrates

    SciTech Connect

    Ahn, Yoonho Son, Jong Yeog; Jang, Joonkyung

    2016-03-15

    CaBi{sub 2}Nb{sub 2}O{sub 9} (CBNO) thin film, a lead-free ferroelectric material, was prepared on a Pt/Ta/glass substrate via pulsed laser deposition. The Ta film was deposited on the glass substrate for a buffer layer. A (115) preferred orientation of the polycrystalline CBNO thin film was verified via X-ray diffraction measurements. The CBNO thin film on a glass substrate exhibited good ferroelectric properties with a remnant polarization of 4.8 μC/cm{sup 2} (2P{sub r} ∼9.6 μC/cm{sup 2}), although it had lower polarization than the epitaxially c-oriented CBNO thin film reported previously. A mosaic-like ferroelectric domain structure was observed via piezoresponse force microscopy. Significantly, the polycrystalline CBNO thin film showed much faster switching behavior within about 100 ns than that of the epitaxially c-oriented CBNO thin film.

  5. Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline lead zirconate titanate thin films

    NASA Astrophysics Data System (ADS)

    Araújo, E. B.; Lima, E. C.; Bdikin, I. K.; Kholkin, A. L.

    2013-05-01

    Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric, and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350 °C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300 °C. For pyrochlore-free PZT thin films, a small (100)-orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. The increase of self-polarization with the film thickness increasing from 200 nm to 710 nm suggests that Schottky barriers and/or mechanical coupling near the film-substrate interface are not primarily responsible for the observed self-polarization effect in our films.

  6. Characterization of the “native” surface thin film on pure polycrystalline iron: A high resolution XPS and TEM study

    NASA Astrophysics Data System (ADS)

    Bhargava, G.; Gouzman, I.; Chun, C. M.; Ramanarayanan, T. A.; Bernasek, S. L.

    2007-02-01

    The characterization of the "native" surface thin film on pure polycrystalline iron has been studied by high resolution X-ray photoelectron (XP) spectroscopy of Fe 2p and O 1s regions. The film was allowed to form by exposing the sample to atmosphere at ambient conditions for a period of 1 h. The systematic approach used here includes the determination of curve fitting parameters from external standards and their use in fitting the raw data for the surface thin film. The quantitative high resolution XPS analysis involved an angle resolved study of the surface to determine the chemical composition and thickness of this native film. The film was found to be a mixture of Fe 3O 4 and Fe(OH) 2 with a thickness of 1.2 ± 0.3 nm. This conclusion is consistent with thermodynamics as indicated by the Pourbaix diagram for the Fe-H 2O system and the phase diagram for the Fe-oxygen system. A detailed TEM study of the native surface film also supports this conclusion.

  7. Spectral analysis of the effects of 1.7 MeV electron irradiation on the current transfer characteristic of cadmium telluride solar cells.

    PubMed

    Tian, Jin-Xiu; Zeng, Guang-Gen; He, Xu-Lin; Zhang, Jing-Quan; Wu, Li-Li; Li, Wei; Li, Bing; Wang, Wen-Wu; Feng, Liang-Huan

    2014-04-01

    The effects of device performance of 1.7 MeV electron irradiation on cadmium telluride polycrystalline thin film solar cells with the structure of anti-radiation glass/ITO/ZnO/CdS/CdTe/ZnTe/ZnTe : Cu/Ni have been studied. Light and dark I-V characteristics, dark C-V characteristics, quantum efficiency (QE), admittance spectrum (AS) and other testing methods were used to analyze cells performance such as the open-circuit voltage (Voc), short-circuit current (Isc), fill factor (FF) and conversion efficiency (eta). It was explored to find out the effects of irradiation on the current transfer characteristic of solar cells combined with the dark current density (Jo), diode ideal factor (A), quantum efficiency, carrier concentration and the depletion layer width. The decline in short-circuit current was very large and the efficiency of solar cells decreased obviously after irradiation. Reverse saturation current density increased, which indicates that p-n junction characteristics of solar cells were damaged, and diode ideal factor was almost the same, so current transport mechanism of solar cells has not changed. Quantum efficiency curves proved that the damage of solar cells' p-n junction influenced the collection of photo-generated carriers. Irradiation made carrier concentration reduce to 40.6%. The analyses have shown that. A new defect was induced by electron irradiation, whose position is close to 0.58 eV above the valence band in the forbidden band, and capture cross section is 1.78 x 10(-16) cm2. These results indicate that irradiation influences the generation of photo-generated carriers, increases the risk of the carrier recombination and the reverse dark current, and eventually makes the short-circuit current of solar cells decay.

  8. Formation of (111) nanotwin lamellae hillocks in polycrystalline silicon thin films caused by deposition of silicon dioxide layer

    SciTech Connect

    Imai, Shigeki; Fujimoto, Masayuki

    2006-01-09

    Plasma-enhanced chemical vapor deposition was used to deposit layers of tetraethylorthosilicate at different temperatures. In the case of low-temperature deposition (300 deg. C), the deposited film surface was smooth and the major surface defects of the polycrystalline silicon (poly-silicon) film surface were grooves of grain boundaries. In contrast, in the case of high-temperature deposition (500 deg. C), the deposited silicon oxide surface exhibited hillocks, and these hillocks were derived from the top end of inclined silicon (111) where protruding nanotwin lamellae penetrated the poly-silicon thin film. The observed hillocks stemming from nanotwin lamellae could have been formed by compressive stress during high-temperature silicon dioxide deposition.

  9. Electronic Transport Properties of Thin Film Inhomogeneous Composites: Silver/gold Copper Indium Diselenide and Silver Amorphous/polycrystalline Silicon

    NASA Astrophysics Data System (ADS)

    Ndlela, Zolili U.

    1990-08-01

    This work investigated a two component inhomogeneous thin film composite consisting of metal particles dispersed in a semiconductor matrix. The systems studied were silver (Ag) or gold (Au) dispersed in copper indium diselenide (CuInSe_2) and silver dispersed in amorphous silicon (alpha-Si) or polycrystalline-silicon. Their transport properties were measured from 20 to 400 K, and it was observed that the films were not adversely affected by the incorporation of metal particles into the semiconducting matrix. This study also provides a mechanism to explain the transport behavior which involves the concepts of localization, mobility edges, and hopping conduction. Evidence strongly indicates that conduction occurs in these composites by hopping and/or by tunneling between localized states or between metallic grains and that their behavior is characterized by a T^ {-1/4} or a T^{-1/2 } temperature dependence.

  10. Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Cleaver, William M.; Barron, Andrew R.; Power, Michael B.; Hepp, Aloysius F.

    1992-01-01

    The dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.

  11. Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Cleaver, William M.; Barron, Andrew R.; Power, Michael B.; Hepp, Aloysius F.

    1992-01-01

    The dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.

  12. Transient Response of Cadmium Telluride Modules to Light Exposure: Preprint

    SciTech Connect

    Deline, C.; del Cueto, J.; Albin, D. S.; Petersen, C.; Tyler, L.; TamizhMani, G.

    2011-07-01

    Commercial cadmium telluride (CdTe) photovoltaic (PV) modules from three different manufacturers were monitored for performance changes during indoor and outdoor light-exposure. Short-term transients in Voc were recorded on some modules, with characteristic times of ~1.1 hours. Outdoor performance data shows a similar drop in Voc after early morning light exposure. Preliminary analysis of FF changes show light-induced changes on multiple time scales, including a long time scale.

  13. Polymer Substrates For Lightweight, Thin-Film Solar Cells

    NASA Technical Reports Server (NTRS)

    Lewis, Carol R.

    1993-01-01

    Substrates survive high deposition temperatures. High-temperature-resistant polymers candidate materials for use as substrates of lightweight, flexible, radiation-resistant solar photovoltaic cells. According to proposal, thin films of copper indium diselenide or cadmium telluride deposited on substrates to serve as active semiconductor layers of cells, parts of photovoltaic power arrays having exceptionally high power-to-weight ratios. Flexibility of cells exploited to make arrays rolled up for storage.

  14. Influence of the microstructure on the resulting 18R martensitic transformation of polycrystalline Cu−Al−Zn thin films obtained by sputtering and reactive annealing

    SciTech Connect

    Domenichini, P.; Condó, A.M.; Soldera, F.; Sirena, M.; Haberkorn, N.

    2016-04-15

    We report the influence of the microstructure on the martensitic transformation in polycrystalline Cu−Zn−Al thin films with 18R structure. The films are grown in two steps. First, Cu−Al thin films are obtained by DC sputtering. Second, the Zn is introduced in the Cu−Al thin films by the annealing them together with a bulk Cu−Zn−Al reference. The crystalline structure of the films was analyzed by X-ray diffraction and transmission electron microscopy. The martensitic transformation temperature was measured by electrical transport using conventional four probe geometry. It was observed that temperatures above 973 K are necessary for zincification of the samples to occur. The resulting martensitic transformation and its hysteresis (barrier for the transformation) depend on the grain size, topology and films thickness. - Highlights: • Polycrystalline Cu−Al−Zn thin films with nanometric grain size are sintered. • Influence of thermal annealing process on the microstructure is analyzed. • Martensitic transformation of Cu−Al−Zn thin films is strongly affected by the microstructure.

  15. Tutorial: Understanding residual stress in polycrystalline thin films through real-time measurements and physical models

    NASA Astrophysics Data System (ADS)

    Chason, Eric; Guduru, Pradeep R.

    2016-05-01

    Residual stress is a long-standing issue in thin film growth. Better understanding and control of film stress would lead to enhanced performance and reduced failures. In this work, we review how thin film stress is measured and interpreted. The results are used to describe a comprehensive picture that is emerging of what controls stress evolution. Examples from multiple studies are discussed to illustrate how the stress depends on key parameters (e.g., growth rate, material type, temperature, grain size, morphology, etc.). The corresponding stress-generating mechanisms that have been proposed to explain the data are also described. To develop a fuller understanding, we consider the kinetic factors that determine how much each of these processes contributes to the overall stress under different conditions. This leads to a kinetic model that can predict the dependence of the stress on multiple parameters. The model results are compared with the experiments to show how this approach can explain many features of stress evolution.

  16. Radiation resistance of thin-film solar cells for space photovoltaic power

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.; Landis, Geoffrey A.

    1991-01-01

    Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

  17. Electrochemical photovoltaic and photoelectrochemical storage cells based on II-VI polycrystalline thin film materials

    SciTech Connect

    Wallace, W.L.

    1983-06-01

    Research on electrochemical photovoltaic cells incorporating thin film CdSe and CdSe /SUB x/ Te /SUB 1-x/ photoanodes has progressed to the point where efficiencies of up to 7% can be achieved on small area electrodes using a polysulfide electrolyte. Higher efficiencies can be obtained in alternate electrolytes in significantly less stable systems. The major limitations on cell efficiency are associated with the open circuit voltage and fill factor. At present, the most promising photoelectrochemical storage system is an in situ three electrode cell which consists of an n-CdSe /SUB x/ Te /SUB 1-x/ photoanode and CoS counterelectrode in a sulfide/polysulfide electrolyte and a Sn/SnS storage electrode isolated in an aqueous sulfide electrolyte.

  18. Research on polycrystalline thin-film CuGaInSe2 solar cells

    NASA Astrophysics Data System (ADS)

    Stanbery, B. J.; Chen, W. S.; Devaney, W. E.; Stewart, J. W.

    1992-11-01

    This report describes research to fabricate high-efficiency CdZnS/CuInGaSe2 (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13 percent efficient, 1-sq cm total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO / Cd(0.82)Zn(0.18)S / CuIn(0.80)Ga(0.20)Se2 cell that was verified at NREL under standard testing conditions at 13.1 percent efficiency with V(sub oc) = 0.581 V, J(sub sc) = 34.8 mA/sq cm, FF = 0.728, and a cell area of 0.979 sq cm.

  19. Research on polycrystalline thin-film CuInGaSe2 solar cells

    NASA Astrophysics Data System (ADS)

    Chen, W. S.; Stewart, J. M.; Mickelsen, R. A.; Devaney, W. E.; Stanbery, B. J.

    1993-10-01

    This report describes work to fabricate high-efficiency CdZnS/CuInGaSe2, thin-film solar cells and to develop improved transparent conductor window layers such as ZnO. The specific technical milestone for Phase 1 was to demonstrate an air mass (AM) 1.5 global 13% , 1-cm(exp 2) total-area CuInGaSe2 (CIGS) thin-film solar cell. For Phase 2, the objective was to demonstrate an AM1.5 global 13.5%, 1-cm(exp 2) total-area efficiency. We focused our activities on three areas. First, we modified the CIGS deposition system to double its substrate capacity. Second, we developed new tooling to enable investigation of a modified aqueous CdZnS process in which the goal was to improve the yield of this critical step in the device fabrication process. Third, we upgraded the ZnO sputtering system to improve its reliability and reproducibility. A dual rotatable cathode metallic source was installed, and the sputtering parameters were further optimized to improve ZnO's properties as a transparent conducting oxide (TCO). Combining the refined CdZnS process with CIGS from the newly fixtured deposition system enable us to fabricate and deliver a ZnO/Cd(0.08)Zn(0.20)S/CuIn(0.74)Ga(0.26)Se2 cell on alumina with I-V characteristics, as measured by NREL under standard test conditions, of 13.7% efficiency with V(proportional to) = 0.5458 V, J(sub sc) = 35.48 mA/cm(exp 2), FF = 0.688, and efficiency = 14.6%.

  20. Research on polycrystalline thin-film CuGaInSe[sub 2] solar cells

    SciTech Connect

    Stanbery, B.J.; Chen, W.S.; Devaney, W.E.; Stewart, J.W. . Defense and Space Systems Group)

    1992-11-01

    This report describes research to fabricate high-efficiency CdZnS/CuInGaSe[sub 2] (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13% efficient, 1-cm[sup 2]-total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition: system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO//Cd[sub 0.82]Zn[sub 0.18]S/CuIn[sub 0.80]Ga[sub 0.20]Se[sub 2] cell that was verified at NREL under standard testing conditions at 13.1% efficiency with V[sub oc] = 0.581 V, J[sub sc] = 34.8 mA/cm[sup 2], FF = 0.728, and a cell area of 0.979 cm[sup 2].

  1. Transient and End Silicide Phase Formation in Thin Film Ni/polycrystalline-Si Reactions for Fully Silicided Gate Applications

    SciTech Connect

    Kittl,J.; Pawlak, M.; Torregiani, C.; Lauwers, A.; Demeurisse, C.; Vrancken, C.; Absil, P.; Biesemans, S.; Coia, C.; et. al

    2007-01-01

    The Ni/polycrystalline-Si thin film reaction was monitored by in situ x-ray diffraction during ramp annealings, obtaining a detailed view of the formation and evolution of silicide phases in stacks of interest for fully silicided gate applications. Samples consisted of Ni (30-170 nm)/polycrystalline-Si (100 nm)/SiO2 (10-30 nm) stacks deposited on (100) Si. The dominant end phase (after full silicidation) was found to be well controlled by the deposited Ni to polycrystalline-Si thickness ratio (tNi/tSi), with formation of NiSi2 ( {approx} 600 C), NiSi ( {approx} 400 C), Ni3Si2 ( {approx} 500 C), Ni2Si, Ni31Si12 ( {approx} 420 C), and Ni3Si ( {approx} 600 C) in stacks with tNi/tSi of 0.3, 0.6, 0.9, 1.2, 1.4, and 1.7, respectively. NiSi and Ni31Si12 were observed to precede formation of NiSi2 and Ni3Si, respectively, as expected for the phase sequence conventionally reported. Formation of Ni2Si was observed at early stages of the reaction. These studies revealed, in addition, the formation of transient phases that appeared and disappeared in narrow temperature ranges, competing with formation of the phases expected in the conventional phase sequence. These included the transient formation of NiSi and Ni31Si12 in stacks in which these phases are not expected to form (e.g., tNi/tSi of 1.7 and 0.9, respectively), at temperatures similar to those in which these phases normally grow.

  2. Alloys in cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Jensen, Douglas Garth

    Alloys formed intentionally or unintentionally during the fabrication of CdTe/CdS solar cells were investigated. The primary focuses were (1) characterizing thin films of CdTesb{1-x}Ssb{x} since these alloys appear to be present in all high-efficiency CdTe/CdS solar cells, and (2) investigating how these alloys affect solar cell performance. Thin films of CdTesb{1-x}Ssb{x} were fabricated and subjected to heat treatments under conditions identical to those used for making CdTe/CdS solar cells. The films were characterized by X-Ray Diffraction, Energy Dispersive Spectroscopy, Scanning Electron Microscopy, and optical measurements. The as-deposited CdTesb{1-x}Ssb{x} films were generally single-phase even when x was well within the miscibility gap shown on CdTe-CdS pseudo-binary phase diagrams. Heat treatments at 415sp°C in the presence of CdClsb2 promoted phase segregation. From diffraction analysis of the phase-segregated films, the solubility limits at 415sp°C of CdS in CdTe, and of CdTe in CdS were found to be 5.8± 0.2% and 3± 1%, respectively. Conventional CdTe/CdS solar cells and novel solar cells made by depositing CdTesb{1-x}Ssb{x}, in place of CdTe were fabricated, tested, characterized, and compared. For the conventional solar cells, diffusion of CdS into the CdTe layer during the fabrication process converted the CdTe to CdTesb{1-x}Ssb{x} with x ranging from the 5.8% solubility limit near the junction to {<}1% near the back contact. Similarly, the CdS layer was converted to CdSsb{1-y}Tesb{y} with y near the 3% solubility limit, in some cases, and {<}1% in cases where the CdS film was annealed with CdClsb2 prior to depositing CdTe. The performance of CdTesb{1-x}Ssb{x}/CdS cells made with x = 0.05-0.06 throughout the absorber layer was nearly identical to the CdTe/CdS cells. This indicates that the operation of conventional devices is largely controlled by the alloys formed by interdiffusion. For the CdTesb{1-x}Ssb{x}/CdS devices, less CdS was consumed by

  3. Transport phenomena in the close-spaced sublimation deposition process for manufacture of large-area cadmium telluride photovoltaic panels: Modeling and optimization

    NASA Astrophysics Data System (ADS)

    Malhotra, C. P.

    With increasing national and global demand for energy and concerns about the effect of fossil fuels on global climate change, there is an increasing emphasis on the development and use of renewable sources of energy. Solar cells or photovoltaics constitute an important renewable energy technology but the major impediment to their widespread adoption has been their high initial cost. Although thin-film photovoltaic semiconductors such as cadmium sulfide-cadmium telluride (CdS/CdTe) can potentially be inexpensively manufactured using large area deposition techniques such as close-spaced sublimation (CSS), their low stability has prevented them from becoming an alternative to traditional polycrystalline silicon solar cells. A key factor affecting the stability of CdS/CdTe cells is the uniformity of deposition of the thin films. Currently no models exist that can relate the processing parameters in a CSS setup with the film deposition uniformity. Central to the development of these models is a fundamental understanding of the complex transport phenomena which constitute the deposition process which include coupled conduction and radiation as well as transition regime rarefied gas flow. This thesis is aimed at filling these knowledge gaps and thereby leading to the development of the relevant models. The specific process under consideration is the CSS setup developed by the Materials Engineering Group at the Colorado State University (CSU). Initially, a 3-D radiation-conduction model of a single processing station was developed using the commercial finite-element software ABAQUS and validated against data from steady-state experiments carried out at CSU. A simplified model was then optimized for maximizing the steady-state thermal uniformity within the substrate. It was inferred that contrary to traditional top and bottom infrared lamp heating, a lamp configuration that directs heat from the periphery of the sources towards the center results in the minimum temperature

  4. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    NASA Astrophysics Data System (ADS)

    Li, Wei; Varlamov, Sergey; Xue, Chaowei

    2014-09-01

    This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, Voc and Jsc than the one on the seed layer without RTA treatment.

  5. Thin film polycrystalline silicon solar cells: first technical progress report, April 15, 1980-July 15, 1980

    SciTech Connect

    1980-07-01

    The objectives of this contract are to fabricate large area thin film silicon solar cells with AM1 efficiency of 10% or greater with good reproducibility and good yield and to assess the feasibility of implementing this process for manufacturing solar cells at a cost of $300/kWe. Efforts during the past quarter have been directed to the purification of metallurgical silicon, the preparation of substrates, and the fabrication and characterization of solar cells. The partial purification of metallurgical silicon by extraction with aqua regia has been investigated in detail, and the resulting silicon was analyzed by the atomic absorption technique. The unidirectional solidification of aqua regia-extracted metallurgical silicon on graphite was used for the preparation of substrates, and the impurity distribution in the substrate was also determined. Large area (> 30 cm/sup 2/) solar cells have been prepared from aqua regia-extracted metallurgical silicon substrates by the thermal reduction of trichlorosilane containing appropriate dopants. Chemically deposited tin-dioxide films were used as antireflection coatings. Solar cells with AM1 efficiencies of about 8.5% have been obtained. Their spectral response, minority carrier diffusion length, and I/sub sc/-V/sub oc/ relation have been measured.

  6. Electrochemical characterisation of copper thin-film formation on polycrystalline platinum.

    PubMed

    Berkes, Balázs B; Henry, John B; Huang, Minghua; Bondarenko, Alexander S

    2012-09-17

    Electrochemically formed thin films are vital for a broad range of applications in virtually every field of modern science and technology. Understanding the film formation process could provide a means to aid the characterisation and control of film properties. Herein, we present a fundamental approach that combines two well-established analytical techniques (namely, electrochemical impedance spectroscopy and electrogravimetry) with a theoretical approach to provide physico-chemical information on the electrode/electrolyte interface during film formation. This approach allows the monitoring of local and overall surface kinetic parameters with time to enable an evaluation of the different modes of film formation. This monitoring is independent of surface area and surface concentrations of electroactive species and so may allow current computational methods to calculate these parameters and provide a deeper physical understanding of the electrodeposition of new bulk phases. The ability of this method to characterise 3D phase growth in situ in more detail than that obtained by conventional approaches is demonstrated through the study of a model system, namely, Cu bulk-phase deposition on a Pt electrode covered with a Cu atomic layer (Cu(ad)/Pt).

  7. Switchable diode effect in polycrystalline Bi3.15Nd0.85Ti3O12 thin films for resistive memories

    NASA Astrophysics Data System (ADS)

    Song, H. J.; Wang, J. B.; Zhong, X. L.; Cheng, J. J.; Jia, L. H.; Wang, F.; Li, B.

    2013-12-01

    The switchable diode effect is found in the Bi3.15Nd0.85Ti3O12 (BNT) polycrystalline thin films with a residual polarization (2Pr) of 55 μC/cm2 fabricated on Pt/Ti/SiO2/Si substrates by chemical solution deposition. The consistencies of P-V and I-V curves demonstrate that the switchable diode effect is mainly triggered by polarization modulated Schottky-like barriers. The ON/OFF ratio of resistive switching based on these switchable diodes is more than 3 orders during the retention capacity measurement, which indicates that the polycrystalline BNT thin films are promising for the resistive memories applications.

  8. Photoreflectance Study of Boron Ion-Implanted (100) Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    Amirtharaj, P. M.; Odell, M. S.; Bowman, R. C., Jr.; Alt, R. L.

    1988-01-01

    Ion implanted (100) cadmium telluride was studied using the contactless technique of photoreflectance. The implantations were performed using 50- to 400-keV boron ions to a maximum dosage of 1.5 x 10(16)/sq cm, and the annealing was accomplished at 500 C under vacuum. The spectral measurements were made at 77 K near the E(0) and E(1) critical points; all the spectra were computer-fitted to Aspnes' theory. The spectral line shapes from the ion damaged, partially recovered and undamaged, or fully recovered regions could be identified, and the respective volume fraction of each phase was estimated.

  9. Photoreflectance Study of Boron Ion-Implanted (100) Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    Amirtharaj, P. M.; Odell, M. S.; Bowman, R. C., Jr.; Alt, R. L.

    1988-01-01

    Ion implanted (100) cadmium telluride was studied using the contactless technique of photoreflectance. The implantations were performed using 50- to 400-keV boron ions to a maximum dosage of 1.5 x 10(16)/sq cm, and the annealing was accomplished at 500 C under vacuum. The spectral measurements were made at 77 K near the E(0) and E(1) critical points; all the spectra were computer-fitted to Aspnes' theory. The spectral line shapes from the ion damaged, partially recovered and undamaged, or fully recovered regions could be identified, and the respective volume fraction of each phase was estimated.

  10. Development of tandem cells consisting of GaAs single crystal and CuInSe2/CdZnS polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Kim, Namsoo P.; Stanbery, Billy J.; Gale, Ronald P.; McClelland, Robert W.

    1989-04-01

    The tandem cells consisting of GaAs single crystal and CuInSe2 polycrystalline thin films are being developed under the joint program of the Boeing Co. and Kopin Corp. to meet the increasing power needs for future spacecraft. The updated status of this program is presented along with experimental results such as cell performance, and radiation resistance. Other cell characteristics including the specific power of and the interconnect options for this tandem cell approach are also discussed.

  11. Development of tandem cells consisting of GaAs single crystal and CuInSe2/CdZnS polycrystalline thin films

    NASA Technical Reports Server (NTRS)

    Kim, Namsoo P.; Stanbery, Billy J.; Gale, Ronald P.; Mcclelland, Robert W.

    1989-01-01

    The tandem cells consisting of GaAs single crystal and CuInSe2 polycrystalline thin films are being developed under the joint program of the Boeing Co. and Kopin Corp. to meet the increasing power needs for future spacecraft. The updated status of this program is presented along with experimental results such as cell performance, and radiation resistance. Other cell characteristics including the specific power of and the interconnect options for this tandem cell approach are also discussed.

  12. Device characterization of cadmium telluride photovoltaics

    NASA Astrophysics Data System (ADS)

    Geisthardt, Russell M.

    Thin-film photovoltaics have the potential to make a large impact on the world energy supply. They can provide clean, affordable energy for the world. Understanding the device physics and behavior will enable increases in efficiency which will increase their impact. This work presents novel approaches for evaluating efficiency, as well as a set of tools for in-depth whole-cell and uniformity characterization. The understanding of efficiency losses is essential for reducing or eliminating the losses. The efficiency can be characterized by a breakdown into three categories: solar spectrum, optical, and electronic efficiency. For several record devices, there is little difference in the solar spectrum efficiency, modest difference in the optical efficiency, and large difference in the electronic efficiency. The losses within each category can also be further characterized. The losses due to the broad solar spectrum and finite temperature are well understood from a thermodynamic physics perspective. Optical losses can be fully characterized using quantum efficiency and optical measurements. Losses in fill factor can be quantified from series and shunt resistance, as well as the expected fill factor from the measured V oc and A. Open-circuit voltage losses are the most significant, but are also be the hardest to understand, as well as the most technology-dependent. Characterization of the whole cell helps to understand the behavior, performance, and properties of the cell. Several different tools can be used for whole-cell characterization, including current-voltage, quantum efficiency, and capacitance measurements. Each of these tools give specific information about the behavior of the cell. When combined, they can lead to a more complete understanding of the cell performance than when taken individually. These tools were applied to several specific CdTe experiments. They have helped to characterize the baseline performance of both the deposition tool and the

  13. Cu-dependent phase transition in polycrystalline CuGaSe2 thin films grown by three-stage process

    NASA Astrophysics Data System (ADS)

    Islam, M. M.; Yamada, A.; Sakurai, T.; Kubota, M.; Ishizuka, S.; Matsubara, K.; Niki, S.; Akimoto, K.

    2011-07-01

    The Cu-dependent phase transition in polycrystalline CuGaSe2 thin films has been studied by an electron probe micro-analyzer (EPMA) and the synchrotron x-ray diffraction method. A Cu-deficiency parameter, Z, defined as (1 - Cu/Ga) was used to study the phase transition. Upon increasing the Z-value, the composition of the films on the Cu2Se-Ga2Se3 pseudo binary tie line was found to shift from the stoichiometric CuGaSe2 (1:1:2) (Z = 0) to the Ga-rich composition through the formation of several ordered defect compounds.The structural modification in the Cu-poor CuGaSe2 film has been investigated by the synchrotron x-ray diffraction method. The existence of the Cu-poor surface phase over the near-stoichiometric bulk CuGaSe2 film was confirmed by the fitting of the accelerated voltage dependent EPMA data.

  14. On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

    NASA Astrophysics Data System (ADS)

    Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

    2017-01-01

    Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

  15. Structural and optical properties of (Ag,Cu)(In,Ga)Se{sub 2} polycrystalline thin film alloys

    SciTech Connect

    Boyle, J. H.; Shafarman, W. N.; Birkmire, R. W.; McCandless, B. E.

    2014-06-14

    The structural and optical properties of pentenary alloy (Ag,Cu)(In,Ga)Se{sub 2} polycrystalline thin films were characterized over the entire compositional range at a fixed (Cu + Ag)/(In + Ga) ratio. Films deposited at 550 °C on bare and molybdenum coated soda-lime glass by elemental co-evaporation in a single-stage process with constant incident fluxes exhibit single phase chalcopyrite structure, corresponding to 122 spacegroup (I-42d) over the entire compositional space. Unit cell refinement of the diffraction patterns show that increasing Ag substitution for Cu, the refined a{sub o} lattice constant, (Ag,Cu)-Se bond length, and anion displacement increase in accordance with the theoretical model proposed by Jaffe, Wei, and Zunger. However, the refined c{sub o} lattice constant and (In,Ga)-Se bond length deviated from theoretical expectations for films with mid-range Ag and Ga compositions and are attributed to influences from crystallographic bond chain ordering or cation electronegativity. The optical band gap, derived from transmission and reflection measurements, widened with increasing Ag and Ga content, due to influences from anion displacement and cation electronegativity, as expected from theoretical considerations for pseudo-binary chalcopyrite compounds.

  16. Tunable thermal conductivity of thin films of polycrystalline AlN by structural inhomogeneity and interfacial oxidation.

    PubMed

    Jaramillo-Fernandez, J; Ordonez-Miranda, J; Ollier, E; Volz, S

    2015-03-28

    The effect of the structural inhomogeneity and oxygen defects on the thermal conductivity of polycrystalline aluminum nitride (AlN) thin films deposited on single-crystal silicon substrates is experimentally and theoretically investigated. The influence of the evolution of crystal structure, grain size, and out-of plane disorientation along the cross plane of the films on their thermal conductivity is analyzed. The impact of oxygen-related defects on thermal conduction is studied in AlN/AlN multilayered samples. Microstructure, texture, and grain size of the films were characterized by X-ray diffraction and scanning and transmission electron microscopy. The measured thermal conductivity obtained with the 3-omega technique for a single and multiple layers of AlN is in fairly good agreement with the theoretical predictions of our model, which is developed by considering a serial assembly of grain distributions. An effective thermal conductivity of 5.92 W m(-1) K(-1) is measured for a 1107.5 nm-thick multilayer structure, which represents a reduction of 20% of the thermal conductivity of an AlN monolayer with approximately the same thickness, due to oxygen impurities at the interface of AlN layers. Our results show that the reduction of the thermal conductivity as the film thickness is scaled down, is strongly determined by the structural inhomogeneities inside the sputtered films. The origin of this non-homogeneity and the effect on phonon scattering are also discussed.

  17. Effects of mechanical stresses on the reliability of low-temperature polycrystalline silicon thin film transistors for foldable displays

    NASA Astrophysics Data System (ADS)

    Bae, Min Soo; Park, Chuntaek; Shin, Dongseok; Lee, Sang Myung; Yun, Ilgu

    2017-07-01

    This paper investigates the mechanical reliability of low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) for foldable display. Both compressive and tensile directions of mechanical stresses were applied for different types of mechanical stresses, such as dynamic and static mechanical stresses. The electrical characteristics of tested n-channel TFTs under mechanical stress conditions were analyzed based on several key parameters, including the threshold voltage (Vth), field effect mobility (μFE), maximum drain current (ID.MAX) and subthreshold swing (Ssub). For both cases of dynamic and static mechanical stresses, increase of Vth and decrease of μFE and ID.MAX were observed in the compressive direction. This trend was inversed when tensile stress was applied. The degradation of electrical characteristics originates from the change of lattice constant after mechanical stress. However, Ssub increases under dynamic tensile stress while it remains unchanged within 5% under static tensile stress. Transient analysis while bent condition was conducted to investigate the change of parameters in time.

  18. On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

    NASA Astrophysics Data System (ADS)

    Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

    2017-04-01

    Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

  19. Ultrafast optical control of magnetization dynamics in polycrystalline bismuth doped iron garnet thin films

    SciTech Connect

    Deb, Marwan Vomir, Mircea; Rehspringer, Jean-Luc; Bigot, Jean-Yves

    2015-12-21

    Controlling the magnetization dynamics on the femtosecond timescale is of fundamental importance for integrated opto-spintronic devices. For industrial perspectives, it requires to develop simple growth techniques for obtaining large area magneto-optical materials having a high amplitude ultrafast Faraday or Kerr response. Here we report on optical pump probe studies of light induced spin dynamics in high quality bismuth doped iron garnet polycrystalline film prepared by the spin coating method. We demonstrate an ultrafast non-thermal optical control of the spin dynamics using both circularly and linearly polarized pulses.

  20. X-ray Microbeam Diffraction Measurements in Polycrystalline Aluminum and Copper Thin Films

    SciTech Connect

    Moyer, L.E.; Cargill, G.S.; Yang, W.; Larson, B.C.; Ice, G.E.

    2010-11-16

    Thermally induced residual strains in polycrystalline Cu and Al films on single crystal Si and glass substrates, respectively, have been examined on a grain-by-grain basis by x-ray microbeam diffraction. The crystallographic orientation and the deviatoric strain tensor, {var_epsilon}{sub ij}*, are determined for each grain by white beam Laue diffraction. From grain orientation mapping and strain tensor measurements, information is obtained about the distributions of strains for similarly oriented grains, about strain variations within single grains, and about grain-to-grain correlations of strains. This type of information may be useful in developing and testing theories for intergrain effects in strain evolution in polycrystals.

  1. Ultrafast optical control of magnetization dynamics in polycrystalline bismuth doped iron garnet thin films

    NASA Astrophysics Data System (ADS)

    Deb, Marwan; Vomir, Mircea; Rehspringer, Jean-Luc; Bigot, Jean-Yves

    2015-12-01

    Controlling the magnetization dynamics on the femtosecond timescale is of fundamental importance for integrated opto-spintronic devices. For industrial perspectives, it requires to develop simple growth techniques for obtaining large area magneto-optical materials having a high amplitude ultrafast Faraday or Kerr response. Here we report on optical pump probe studies of light induced spin dynamics in high quality bismuth doped iron garnet polycrystalline film prepared by the spin coating method. We demonstrate an ultrafast non-thermal optical control of the spin dynamics using both circularly and linearly polarized pulses.

  2. Impact of Surface Chemistry on Grain Boundary Induced Intrinsic Stress Evolution during Polycrystalline Thin Film Growth

    NASA Astrophysics Data System (ADS)

    Qi, Y.; Sheldon, B. W.; Guo, H.; Xiao, X.; Kothari, A. K.

    2009-02-01

    First principles calculations were integrated with cohesive zone and growth chemistry models to demonstrate that adsorbed species can significantly alter stresses associated with grain boundary formation during polycrystalline film growth. Using diamond growth as an example, the results show that lower substrate temperatures increase the hydrogen content at the surface, which reduces tensile stress, widens the grain boundary separations, and permits additional atom insertions that can induce compressive stress. More generally, this work demonstrates that surface heteroatoms can lead to behavior which is not readily described by existing models of intrinsic stress evolution.

  3. Ion-Assisted Laser Deposition of Intermediate Layers for Yttrium BARIUM(2) COPPER(3) OXYGEN(7-DELTA) Thin Film Growth on Polycrystalline and Amorphous Substrates.

    NASA Astrophysics Data System (ADS)

    Reade, Ronald Paul

    The growth of YB_2Cu _3O_{7-delta} (YBCO) high-temperature superconductor thin films has largely been limited to deposition on single-crystal substrates to date. In order to expand the range of potential applications, growth on polycrystalline and amorphous substrates is desirable. In particular, the deposition of YBCO thin films with high critical current densities on polycrystalline metal alloys would allow the manufacture of superconducting tapes. However, it is shown that it is not possible to grow YBCO thin films directly on this type of substrate due to chemical and structural incompatibility. This work investigates the use of a yttria-stabilized zirconia (YSZ) intermediate layer to address this problem. An ion-assisted pulsed-laser deposition process is developed to provide control of orientation during the growth of the YSZ layers. The important properties of YBCO and YSZ are summarized and the status of research on thin film growth of these materials is reviewed. An overview of the pulsed-laser deposition (PLD) technique is presented. The use of ion -assisted deposition techniques to control thin film properties is discussed. Using an ion-assisted PLD process, the growth of (001) YSZ layers with controlled alignment of the in -plane crystal axes is achieved on polycrystalline metal and other polycrystalline and amorphous substrates. Studies of the important process parameters are presented. These layers are demonstrated to be appropriate for the subsequent deposition of c-axis YBCO thin films with alignment of the in-plane axes. A critical temperature of 92K and critical current densities (at 77K) of 6times 10^5 and 5times 10^4 A/cm ^2 without and with a 0.4T magnetic field, have been achieved. These critical current densities are higher than those demonstrated for competing technologies. The applicability of the developed technology is discussed. The control of film orientation using the ion-assisted PLD process is compared to the existing theory and

  4. Tailoring of in-plane magnetic anisotropy in polycrystalline cobalt thin films by external stress

    NASA Astrophysics Data System (ADS)

    Kumar, Dileep; Singh, Sadhana; Vishawakarma, Pramod; Dev, Arun Singh; Reddy, V. R.; Gupta, Ajay

    2016-11-01

    Polycrystalline Co films of nominal thickness ~180 Å were deposited on intentionally curved Si substrates. Tensile and compressive stresses of 100 MPa and 150 MPa were induced in the films by relieving the curvature. It has been found that, within the elastic limit, presence of stress leads to an in-plane magnetic anisotropy in the film and its strength increases with increasing stress. Easy axis of magnetization in the films is found to be parallel/ transverse to the compressive /tensile stresses respectively. The origin of magnetic anisotropy in the stressed films is understood in terms of magneto- elastic coupling, where the stress try to align the magnetic moments in order to minimize the magneto-elastic as well as anisotropy energy. Tensile stress is also found to be responsible for the surface smoothening of the films, which is attributed to the movement of the atoms associated with the applied stress. The present work provides a possible way to tailor the magnetic anisotropy and its direction in polycrystalline and amorphous films using external stress.

  5. Charge transport in polycrystalline silicon thin-films on glass substrates

    NASA Astrophysics Data System (ADS)

    Scheller, L.-P.; Nickel, N. H.

    2012-07-01

    Charge carrier transport in solid-phase crystallized polycrystalline silicon (poly-Si) was investigated as a function of the deposition temperature, Td, the amorphous starting material and the used substrates. The samples were characterized using temperature dependent transport measurements to determine the carrier concentration, mobility, and conductivity. Samples prepared on a-SiN:H covered borofloat glass exhibit a low carrier concentration that is independent of Td. In these samples, charge transport is dominated by intra-grain scattering mechanisms. In contrast, when poly-Si is prepared on corning glass, the carrier concentration shows an inverted U-shape behavior with increasing deposition temperature. The Hall mobility is thermally activated, which is consistent with thermionic carrier emission over potential energy barriers. The change of the activation energy with experimental parameters is accompanied by a large change of the exponential prefactor by more than 4 orders of magnitude. This is indicative of a Meyer-Neldel behavior. Moreover, at low temperatures, the conductivity deviates from an activated behavior indicating hopping transport with a mean hopping distance of ≈140 Å and an energy difference of ≈82 meV between the participating states. To derive insight into the underlying transport mechanisms and to determine information on barrier energy heights and grain-boundary defect-densities, the experimental data were analyzed employing transport models for polycrystalline materials.

  6. Schottky Barrier Thin Film Transistor (SB-TFT) on low-temperature polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    De Iacovo, A.; Ferrone, A.; Colace, L.; Minotti, A.; Maiolo, L.; Pecora, A.

    2016-12-01

    We report on the fabrication and characterization of Schottky barrier transistors on polycrystalline silicon. The transistors were realized exploiting Cr-Si and Ti-Si Schottky barrier with a low thermal budget process, compatible with polymeric, ultraflexible substrates. We obtained devices with threshold voltages as low as 1.7 V (for n channel) and 4 V (for p channel) with channel lengths ranging from 2 to 40 μm. Resulting on/off ratios are as high as 5 · 103. The devices showed threshold voltages and subthreshold slopes comparable with already published N- and P-MOS devices realized with the same process on polyimide substrates thus representing a cheaper and scalable alternative to ultraflexible transistors with doped source and drain.

  7. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing.

    PubMed

    Machida, Emi; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ikenoue, Hiroshi

    2012-12-17

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 μm, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

  8. Estimation of steady-state leakage current in polycrystalline PZT thin films

    NASA Astrophysics Data System (ADS)

    Podgorny, Yury; Vorotilov, Konstantin; Sigov, Alexander

    2016-09-01

    Estimation of the steady state (or "true") leakage current Js in polycrystalline ferroelectric PZT films with the use of the voltage-step technique is discussed. Curie-von Schweidler (CvS) and sum of exponents (Σ exp ) models are studied for current-time J (t) data fitting. Σ exp model (sum of three or two exponents) gives better fitting characteristics and provides good accuracy of Js estimation at reduced measurement time thus making possible to avoid film degradation, whereas CvS model is very sensitive to both start and finish time points and give in many cases incorrect results. The results give rise to suggest an existence of low-frequency relaxation processes in PZT films with characteristic duration of tens and hundreds of seconds.

  9. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

    SciTech Connect

    Machida, Emi; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ikenoue, Hiroshi

    2012-12-17

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

  10. Spatially resolved probing of Preisach density in polycrystalline ferroelectric thin films

    SciTech Connect

    Guo, Senli; Ovchinnikov, Oleg S; Curtis, Mark E; Johnson, Matthew B; Jesse, Stephen; Kalinin, Sergei V

    2010-01-01

    Applications of the ferroelectric materials for the information storage necessitate the understanding of local switching behavior on the level of individual grains and microstructural elements. In particular, implementation of multilevel neuromorphic elements requires the understanding of history-dependent polarization responses. Here, we introduce the spatially resolved approach for mapping local Preisach densities in polycrystalline ferroelectrics based on first-order reversal curve (FORC) measurements over spatially resolved grid by piezoresponse force spectroscopy using tip-electrode. The band excitation approach allowed effective use of cantilever resonances to amplify weak piezoelectric signal and also provided insight in position-, voltage-, and voltage history-dependent mechanical properties of the tip-surface contact. Several approaches for visualization and comparison of the multidimensional data sets formed by FORC families or Preisach densities at each point are introduced and compared. The relationship between switching behavior and microstructure is analyzed.

  11. Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

    NASA Astrophysics Data System (ADS)

    Zhou, Yan; Ramaneti, Rajesh; Anaya, Julian; Korneychuk, Svetlana; Derluyn, Joff; Sun, Huarui; Pomeroy, James; Verbeeck, Johan; Haenen, Ken; Kuball, Martin

    2017-07-01

    Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κDia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κDia in the measured 25-225 °C range. Device simulation using the experimental κDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.

  12. Polycrystalline silicon thin-film solar cells with plasmonic-enhanced light-trapping.

    PubMed

    Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

    2012-07-02

    One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach. The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles. To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm(2), which can be increased up to 17-18 mA/cm(2) (~25% higher) after application of a simple diffuse back reflector made of a white paint. To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing

  13. Anisotropic and inhomogeneous thermal conduction in suspended thin-film polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Sood, Aditya; Cho, Jungwan; Hobart, Karl D.; Feygelson, Tatyana I.; Pate, Bradford B.; Asheghi, Mehdi; Cahill, David G.; Goodson, Kenneth E.

    2016-05-01

    While there is a great wealth of data for thermal transport in synthetic diamond, there remains much to be learned about the impacts of grain structure and associated defects and impurities within a few microns of the nucleation region in films grown using chemical vapor deposition. Measurements of the inhomogeneous and anisotropic thermal conductivity in films thinner than 10 μm have previously been complicated by the presence of the substrate thermal boundary resistance. Here, we study thermal conduction in suspended films of polycrystalline diamond, with thicknesses ranging between 0.5 and 5.6 μm, using time-domain thermoreflectance. Measurements on both sides of the films facilitate extraction of the thickness-dependent in-plane ( κ r ) and through-plane ( κ z ) thermal conductivities in the vicinity of the coalescence and high-quality regions. The columnar grain structure makes the conductivity highly anisotropic, with κ z being nearly three to five times as large as κ r , a contrast higher than that reported previously for thicker films. In the vicinity of the high-quality region, κ r and κ z range from 77 ± 10 W/m-K and 210 ± 50 W/m-K for the 1 μm thick film to 130 ± 20 W/m-K and 710 ± 120 W/m-K for the 5.6 μm thick film, respectively. The data are interpreted using a model relating the anisotropy to the scattering on the boundaries of columnar grains and the evolution of the grain size considering their nucleation density and spatial rate of growth. This study aids in the reduction in the near-interfacial resistance of diamond films and efforts to fabricate diamond composites with silicon and GaN for power electronics.

  14. Atomic-resolution characterization of the effects of CdCl{sub 2} treatment on poly-crystalline CdTe thin films

    SciTech Connect

    Paulauskas, T. Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Klie, R. F.

    2014-08-18

    Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl{sub 2} environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl{sub 2}, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

  15. Structural characterization and optical properties of Sol-gel-derived polycrystalline Pb(Zr0.35Ti0.65)O3 thin films

    NASA Astrophysics Data System (ADS)

    Zhang, Fan; Zhang, Rong Jun; Wang, Zi Yi; Zheng, Yu Xiang; Wang, Song You; Zhao, Hai Bin; Chen, Liang Yao; Liu, Xiao Bin; Jiang, An Quan

    2013-07-01

    Polycrystalline Pb(Zr0.35Ti0.65)O3 thin films prepared on Pt/Ti/SiO2/Si substrate by using solgel technique were characterized by using X-ray diffraction (XRD) and atomic force microscopy (AFM). The optical properties of the films were investigated by using spectroscopic ellipsometry (SE) with a four-phase optical model, air/roughness layer/PZT layer/Pt layer in the spectral range of 300-800 nm. The optical band gap of the films calculated following the Tauc's Law was smaller than that of an amorphous PZT thin film with some microcrystals existing on the surface. The result indicates that the quantum-size effect leads to an increase in band gap when the crystalline dimensions become very small.

  16. A preliminary study on the use of cadmium telluride detectors in the scintigraphy of thyroid gland

    NASA Astrophysics Data System (ADS)

    Mancini, A. M.; Quirini, A.; Vasanelli, L.; Bacci, C.; Bernabei, R.; Pani, R.; Rispoli, B.; Ballesio, P. L.; Furetta, C.

    1981-10-01

    A cadmium telluride gamma detector has been used for monitoring the activity of a radioactive tracer in a thyroid gland. Preliminary measurements are reported in comparison with those obtained with a standard NaI(Tl) scintillator.

  17. [Spectral analyzing effects of atmosphere states on the structure and characteristics of CdTe polycrystalline thin films made by close-spaced sublimation].

    PubMed

    Zheng, Hua-jing; Zheng, Jia-gui; Feng, Liang-huan; Zhang, Jing-quan; Xie, Er-qing

    2005-07-01

    The structure and characteristics of CdTe thin films are dependent on the working atmosphere states in close-spaced sublimation. In the present paper, CdTe polycrystalline thin films were deposited by CSS in mixture atmosphere of argon and oxygen. The physical mechanism of CSS was analyzed, and the temperature distribution in CSS system was measured. The dependence of preliminary nucleus creation on the atmosphere states (involving component and pressure) was studied. Transparencies were measured and optic energy gaps were calculated. The results show that: (1) The CdTe films deposited in different atmospheres are cubic structure. With increasing oxygen concentration, a increases and reaches the maximum at 6% oxygen concentration, then reduces, and increases again after passing the point at 12% oxygen concentration. Among them, the sample depositing at 9% oxygen concentration is the best. The optic energy gaps are 1.50-1.51 eV for all CdTe films. (2) The samples depositing at different pressures at 9% oxygen concentration are all cubical structure of CdTe, and the diffraction peaks of CdS and SnO2:F still appear. With the gas pressure increasing, the crystal size of CdTe minishes, the transparency of the thin film goes down, and the absorption side shifts to the short-wave direction. (3) The polycrystalline thin films with high quality deposit in 4 minutes under the depositing condition that the substrate temperature is 550 degrees C, and source temperature is 620 degrees C at 9% oxygen concentration.

  18. Local Stoichiometry and Atomic Interdiffusion during Reactive Metal/Mercury-Cadmium-Telluride Junction Formation.

    DTIC Science & Technology

    1987-10-23

    CHART NATIONAL BUREAU OF STANDARDS- 1963-A IfP LOCAL STOICHIOMETRY AND ATOMIC INTERDIFFUSION DURING REACTIVE METAL/ MERCURY- CADMIUM -TELLURIDE...TITLE rand Subtitle) S. TYPE OF REPORT PERIOED LOCAL STOICHIOMETRY AND ATOMIC INTERDIFFUSION Interim, 1/8 DURING REACTIVE METAL/MERCURY- CADMIUM ...identliy by block nuembw) Ag, Ge and Sm overlayers on Mercury- Cadmium -Telluride surfaces exhibit widely different interface reactivity and yield a

  19. Towards understanding junction degradation in cadmium telluride solar cells

    SciTech Connect

    Nardone, Marco

    2014-06-21

    A degradation mechanism in cadmium telluride (CdTe/CdS) solar cells is investigated using time-dependent numerical modeling to simulate various temperature, bias, and illumination stress conditions. The physical mechanism is based on defect generation rates that are proportional to nonequilibrium charge carrier concentrations. It is found that a commonly observed degradation mode for CdTe/CdS solar cells can be reproduced only if defects are allowed to form in a narrow region of the absorber layer close to the CdTe/CdS junction. A key aspect of this junction degradation is that both mid-gap donor and shallow acceptor-type defects must be generated simultaneously in response to photo-excitation or applied bias. The numerical approach employed here can be extended to study other mechanisms for any photovoltaic technology.

  20. Synergistic effects of water addition and step heating on the formation of solution-processed zinc tin oxide thin films: towards high-mobility polycrystalline transistors

    NASA Astrophysics Data System (ADS)

    Huang, Genmao; Duan, Lian; Zhao, Yunlong; Zhang, Yunge; Dong, Guifang; Zhang, Deqiang; Qiu, Yong

    2016-11-01

    Thin-film transistors (TFTs) with high mobility and good uniformity are attractive for next-generation flat panel displays. In this work, solution-processed polycrystalline zinc tin oxide (ZTO) thin film with well-ordered microstructure is prepared, thanks to the synergistic effect of water addition and step heating. The step heating treatment other than direct annealing induces crystallization, while adequate water added to precursor solution further facilitates alloying and densification process. The optimal polycrystalline ZTO film is free of hierarchical sublayers, and featured with an increased amount of ternary phases, as well as a decreased fraction of oxygen vacancies and hydroxides. TFT devices based on such an active layer exhibit a remarkable field-effect mobility of 52.5 cm2 V-1 s-1, a current on/off ratio of 2 × 105, a threshold voltage of 2.32 V, and a subthreshold swing of 0.36 V dec-1. Our work offers a facile method towards high-performance solution-processed polycrystalline metal oxide TFTs.

  1. Synergistic effects of water addition and step heating on the formation of solution-processed zinc tin oxide thin films: towards high-mobility polycrystalline transistors.

    PubMed

    Huang, Genmao; Duan, Lian; Zhao, Yunlong; Zhang, Yunge; Dong, Guifang; Zhang, Deqiang; Qiu, Yong

    2016-11-18

    Thin-film transistors (TFTs) with high mobility and good uniformity are attractive for next-generation flat panel displays. In this work, solution-processed polycrystalline zinc tin oxide (ZTO) thin film with well-ordered microstructure is prepared, thanks to the synergistic effect of water addition and step heating. The step heating treatment other than direct annealing induces crystallization, while adequate water added to precursor solution further facilitates alloying and densification process. The optimal polycrystalline ZTO film is free of hierarchical sublayers, and featured with an increased amount of ternary phases, as well as a decreased fraction of oxygen vacancies and hydroxides. TFT devices based on such an active layer exhibit a remarkable field-effect mobility of 52.5 cm(2) V(-1) s(-1), a current on/off ratio of 2 × 10(5), a threshold voltage of 2.32 V, and a subthreshold swing of 0.36 V dec(-1). Our work offers a facile method towards high-performance solution-processed polycrystalline metal oxide TFTs.

  2. Evaluation on residual stress in Bi3.15(Eu0.7Nd0.15)Ti3O12 polycrystalline ferroelectric thin film by using the orientation average method

    NASA Astrophysics Data System (ADS)

    Wei, Y.; Cheng, H. B.; Wang, X. Y.; Zheng, X. J.

    2012-12-01

    We propose an orientation average method to evaluate residual stresses in polycrystalline thin films. Bi3.15(Eu0.7Nd0.15)Ti3O12 was used to verify our approach, with films prepared by metal organic decomposition at various annealing temperatures. The mechanical properties and microstructure were characterized by nanoindentation and X-ray diffraction. The thin film annealed at 600 °C has the largest residual compressive stress of 771 MPa among all thin films. The residual stresses are evaluated by the proposed method and traditional sin2ψ method, and the maximum distinction is less than 6.43%, demonstrating that the proposed method is reliable and convenient to evaluate residual stress in polycrystalline thin films.

  3. Studies of Sputtered Cadmium Telluride and Cadmium Selenide Solar Cells

    NASA Astrophysics Data System (ADS)

    Kwon, Dohyoung

    CdTe has recently become the most commercially successful polycrystalline thinfilm solar module material. Its low cost, large-area solar module is reshaping the silicondominated solar panel market; however, CdTe has much room to improve and thus more fundamental understanding is needed. Current thin film solar cell research is focused on two areas: One is identifying loss mechanisms and understanding the polycrystalline nature of single junction device to improve device performance. Another is searching for new materials and fabricating tandem solar cells. In this study, along with other people's work to improve the efficiency of CdTe solar module, I studied loss mechanism and growth mode of CdTe solar cells to have fundamental understanding of polycrystalline films. In addition to that, in an effort to make tandem solar cells, I fabricated and characterized CdSe solar cells, which is considered as an ideal candidate for the top cell with its band gap of 1.7 eV. This dissertation is designed to show similarities and differences between CdTe and CdSe solar cells, side by side. After the introduction (Chapter1), I will review the physical properties of CdTe and CdSe solar cells (Chapter 2). Two primary tools to study defects and surface morphology were photoluminescence (PL) and atomic force microscopy (AFM). PL showed information on the crystallinity and defects of CdTe and CdSe films before and after annealing.(Chapter 3). AFM measurements and their analysis using scaling theory revealed information on the growth modes of CdTe and CdSe films.(Chapter 4). With the goal of exploring suitability for tandem structures with ˜1.7 eV top cell and ˜1.1 eV bottom cell, I fabricated and characterized single-junction CdSe devices. (Chapter 5) In addition, for the bottom cell I fabricated HgCdTe cells with Eg˜1.1 eV. Single junction HgCdTe and two-terminal CdTe/HgCdTe tandem solar cells were fabricated and characterized. (Chapter 5)

  4. Thin film solar cells. (Latest citations from the NTIS bibliographic database). Published Search

    SciTech Connect

    1997-11-01

    The bibliography contains citations concerning research and development of high-efficiency and low-cost thin film solar cells. References discuss the design and fabrication of silicon, gallium arsenide, copper selenide, indium selenide, cadmium telluride, and copper indium selenide solar cells. Applications in space and utilities are examined. Government projects and foreign technology are also reviewed. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

  5. Structural, optical and Raman scattering studies on polycrystalline Cd 0.8Zn 0.2Te thin films prepared by vacuum evaporation

    NASA Astrophysics Data System (ADS)

    Prabakar, K.; Narayandass, Sa. K.; Mangalaraj, D.

    2003-05-01

    Cd 0.8Zn 0.2Te polycrystalline thin films were grown onto well-cleaned corning glass substrates at room temperature by vacuum evaporation. The optical response of vacuum-evaporated Cd 0.8Zn 0.2Te films in the 1.5-5.5 eV photon energy range at room temperature has been studied by spectroscopic ellipsometry. The measured dielectric-function spectra reveal distinct structures at critical point energies E1, E1+ Δ1 and E2 corresponding to the interband transitions. X-ray diffraction pattern showed that the incorporation of zinc favours the growth of films preferentially oriented parallel to the (1 1 1) planes of cubic CdTe. Due to the film's sensitivity to the local atomic order, the samples were studied by Raman spectroscopy. The transverse and longitudinal optic modes regularly found in CdTe were also observed in Cd 0.8Zn 0.2Te thin films. It was observed that the incorporation of Zn could not avoid the formation of Te precipitates, which are commonly detected in CdTe thin films and bulk samples. From the optical transmittance and absorption coefficient, the band gap of the films is found to be direct allowed and the energy is estimated as 1.6 eV.

  6. Impact of the n+ emitter layer on the structural and electrical properties of p-type polycrystalline silicon thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Kumar, A.; Hidayat, H.; Ke, C.; Chakraborty, S.; Dalapati, G. K.; Widenborg, P. I.; Tan, C. C.; Dolmanan, S.; Aberle, A. G.

    2013-10-01

    The effect of the phosphine (PH3) flow rate on the doping profile, in particular the peak doping concentration of the n+ emitter layer, of solid phase crystallised polycrystalline silicon thin-film solar cells on glass is investigated by electrochemical capacitance-voltage profiling. The peak n+ layer doping is found to increase with increasing PH3 gas flow, resulting in a shift of the p-n junction location towards the centre of the diode. The impact of the PH3 flow rate on the crystal quality of the poly-Si films is analysed using ultraviolet (UV) reflectance and UV/visible Raman spectroscopy. The impact of the PH3 flow rate on the efficiency of poly-Si thin-film solar cells is investigated using electrical measurements. An improvement in the efficiency by 46% and a pseudo energy conversion efficiency of 5% was obtained through precise control of the flow rate at an intermediate n+ emitter layer doping concentration of 1.0 × 1019 cm-3. The best fabricated poly-Si thin-film solar cell is also found to have the highest crystal quality factor, based on both Raman and UV reflectance measurements.

  7. Environmentally responsible recycling of thin-film cadmium telluride photovoltaic modules. Final technical report

    SciTech Connect

    Bohland, John

    2002-09-09

    Continuing from the third quarter, all technical objectives of this Phase II SBIR work were previously and successfully completed. This report is therefore brief and contains two elements (1) a comparison of technical objective accomplishments to the stated goals in the original grant proposal (2) a summary of the third key element of this work; a market analysis for the developed recycling technology systems.

  8. Stability studies of cadmium telluride/cadmium sulfide thin film solar cells

    NASA Astrophysics Data System (ADS)

    Tetali, Bhaskar Reddy

    CdTe/CdS solar cells have shown great potential for terrestrial solar power applications. To be commercially viable they need to operate efficiently for about 30 years. CdS/CdTe solar cells fabricated at USF have shown record efficiencies upto 16.5% [46]. This research involves the study of thermal stress (TS) and light soaking (LS) on the stability of high efficiency (>10%) solar cells. The change in key electrical parameters Voc, FF, J sc, A and Jo are quantified for more than 2000 hours of stressing. The device degradation was found to increase with stress temperature for TS. Below 100°C, the changes were due to collection and recombination losses. Above 100°C, "shunting" mechanisms were found to start affecting the device performance. A fast drop in performance within the first 500 hours was observed. It is believed to be due to an increase in deep-level Cu-related defects that increase with stress temperature. Diffusion of Cu i+ ions from the back contact along CdTe grain boundaries had been previously reported [16]. An increase in light/dark J-V crossover and bulk Rs with stress time and temperature was observed. A slow degradation component attributed to Cu-related substitutional defect [23] formation/diffusion to the junction and CdS is proposed. This should compensate the CdS over time and increase its photoconductivity/resistivity. An improvement in the current collection and FF within 100 hours of LS was observed. This is possibly due to the enhancement of Cui + diffusion into the junction and CdS during LS as previously reported [16]. A reduction in light/dark J-V crossover was observed, possibly due to an increase in CdS doping and reduction in the CdS/SnO2 front contact barrier. However, a fast decrease in Voc and increase in recombination current was also observed in the first 1000 hours of LS. This is possibly due to the existence of higher concentration of Cu-related deep level defects at the junction. A larger decrease in Voc was found for LS than TS at the same operating temperature. A continuous drop in performance over time is observed for both TS and LS. The existence of a slow degradation component involving the formation/diffusion of Cu-related substitutional defects at the junction and CdS is proposed. The concentration of this defect is probably not high enough in CdS for LS samples to affect their photoconductivity and cause light/dark J-V crossover in 2000 hours.

  9. Planar-orientation polycrystalline thin film of liquid-crystalline organic semiconductor by template-directed self-assembly

    NASA Astrophysics Data System (ADS)

    Wang, Yi-Fei; Iino, Hiroaki; Hanna, Jun-ichi

    2017-10-01

    We fabricated planar-orientation crystalline thin films of organic semiconductors, in which molecules sit parallel, i.e., “face-on”, on the substrate and favor vertical charge transport. Thanks to molecular orientation that is sensitive to surface properties and the self-organization of liquid crystals, planar-orientation crystalline thin films can be prepared by simply cooling a smectic liquid-crystalline organic semiconductor from isotropic temperature with the aid of a poly(vinyl alcohol) (PVA) microtemplate. The molecular orientation of crystalline thin films was investigated by polarized optical microscopy (POM) and X-ray diffraction (XRD) analysis, and the current–voltage characteristics of the films were studied in a diode configuration. The results showed high potential for device applications.

  10. DC electric and photoelectric measurements of CdTe thin films in Schottky-barrier cells

    NASA Astrophysics Data System (ADS)

    Darwish, S.

    2004-06-01

    Measurements of the temperature dependence of ohmic and space-charge-limited (SCL) currents on thin films of polycrystalline particles of cadmium telluride in Schottky-junction cells have been carried out in air ambient. These cells showed rectification where p-CdTe material was flanked between an ohmic contact (Au) and a blocking contact (Al). At low voltages, the dark current in the forward direction which corresponds to negative potential at the Al electrode varies exponentially with voltage. At higher voltages, two distinct regions of ohmic and SCL conduction limited by a discrete trapping level are determined. Traps with a density of 3.85×10 22 m -3 located at 0.58 eV above the valence band edge have been observed. The thickness dependence in the square-law region has been found to confirm the d-3 law. Values of conversion efficiency as high as 11.3% and open-circuit voltage of 0.77 V have been evaluated from the photo-measurements of J- V characteristic at input power density of 100 mW cm -2. Space-charge concentrations and barrier heights have been estimated from the capacitance-voltage ( C- V) measurements both in dark and under constant illumination. The linearity of the C-2- V dependence is associated with a homogenous distribution of the impurities inside the space-charge region.

  11. Improvement in pH sensitivity of low-temperature polycrystalline-silicon thin-film transistor sensors using H2 sintering.

    PubMed

    Yen, Li-Chen; Tang, Ming-Tsyr; Chang, Fang-Yu; Pan, Tung-Ming; Chao, Tien-Sheng; Lee, Chiang-Hsuan

    2014-02-25

    In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H2 sintering process. The low-temperature polycrystalline-silicon (LTPS) TFT sensor with H2 sintering exhibited a high sensitivity than that without H2 sintering. This result may be due to the resulting increase in the number of Si-OH2(+) and Si-O(-) bonds due to the incorporation of H in the gate oxide to reduce the dangling silicon bonds and hence create the surface active sites and the resulting increase in the number of chemical reactions at these surface active sites. Moreover, the LTPS TFT sensor device not only offers low cost and a simple fabrication processes, but the technique also can be extended to integrate the sensor into other systems.

  12. A comparison of scattering and non-scattering anti-reflection designs for back contacted polycrystalline thin film silicon solar cells in superstrate configuration

    NASA Astrophysics Data System (ADS)

    Lockau, Daniel; Hammerschmidt, M.; Haschke, Jan; Blome, Mark; Ruske, F.; Schmidt, F.; Rech, B.

    2014-05-01

    A new generation of polycrystalline silicon thin film solar cells is currently being developed in laboratories, employing a combination of novel laser or electron beam based liquid phase crystallization (LPC) techniques and single side contacting systems. The lateral grain size of these polycrystalline cells is in the millimeter range at an absorber thickness of up to 10 μm. In this contribution we present a comparative simulation study of several 1D, 2D and 3D nano-optical designs for the substrate / illumination side interface to the several micrometer thick back contacted LPC silicon absorber material. The compared geometries comprise multilayer coatings, gratings with step and continuous profiles as well as combinations thereof. Using the transfer matrix method and a finite element method implementation to rigorously solve Maxwell's equations, we discuss anti-reflection and scattering properties of the different front interface designs in view of the angular distribution of incident light.

  13. Polycrystalline ZnTe thin film on silicon synthesized by pulsed laser deposition and subsequent pulsed laser melting

    NASA Astrophysics Data System (ADS)

    Xu, Menglei; Gao, Kun; Wu, Jiada; Cai, Hua; Yuan, Ye; Prucnal, S.; Hübner, R.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

    2016-03-01

    ZnTe thin films on Si substrates have been prepared by pulsed laser deposition and subsequent pulsed laser melting (PLM) treatment. The crystallization during PLM is confirmed by Raman scattering, x-ray diffraction and room temperature photoluminescence (PL) measurements. The PL results show a broad peak at 574 nm (2.16 eV), which can be assigned to the transitions from the conduction band to the acceptor level located at 0.145 eV above the valence band induced by zinc-vacancy ionization. Our work provides an applicable approach to low temperature preparation of crystalline ZnTe thin films.

  14. Strain evolution of each type of grains in poly-crystalline (Ba,Sr)TiO3 thin films grown by sputtering

    PubMed Central

    Park, Woo Young; Park, Min Hyuk; Lee, Jong Ho; Yoon, Jung Ho; Han, Jeong Hwan; Choi, Jung-Hae; Hwang, Cheol Seong

    2012-01-01

    The strain states of [111]-, [110]-, and [002]-oriented grains in poly-crystalline sputtered (Ba,Sr)TiO3 thin films on highly [111]-oriented Pt electrode/Si substrates were carefully examined by X-ray diffraction techniques. Remarkably, [002]-oriented grains respond more while [110]- and [111]-oriented grains do less than the theoretically estimated responses, which is understandable from the arrangement of the TiO6 octahedra with respect to the stress direction. Furthermore, such mechanical responses are completely independent of the degree of crystallization and film thickness. The transition growth temperature between the positive and negative strains was also different depending on the grain orientation. The unstrained lattice parameter for each type of grain was different suggesting that the oxygen vacancy concentration for each type of grain is different, too. The results reveal that polycrystalline (Ba,Sr)TiO3 thin films are not an aggregation of differently oriented grains which simply follow the mechanical behavior of single crystal with different orientations. PMID:23230505

  15. Quantitative analysis of the magnetic domain structure in polycrystalline La(0.7)Sr(0.3)MnO3 thin films by magnetic force microscopy.

    PubMed

    Li, Zhenghua; Wei, Fulin; Yoshimura, Satoru; Li, Guoqing; Asano, Hidefumi; Saito, Hitoshi

    2013-01-14

    The nanoscale magnetic domain structure of the polycrystalline La(0.7)Sr(0.3)MnO(3) granular thin films was imaged with a developed magnetic force microscopy technique by simultaneously detecting both the perpendicular and in-plane components of magnetic field gradients during the same scan of the tip oscillation. The characteristics of both the perpendicular and in-plane magnetic field gradient at the grain edges or the nonmagnetic grain boundary phase for LSMO films were demonstrated and can be used to evaluate the magnetic domain structure and magnetic isolation between neighboring grains. A two dimensional signal transformation algorithm to reconstruct the in-plane magnetization distribution of the polycrystalline LSMO thin films from the measured raw MFM images with the aid of the deconvolution technique was presented. The comparison between the experimental and simulated MFM images indicates that the magnetic grains or clusters are in the single domain (SD) or multi-domain (MD) state with the magnetic moments parallel or anti-parallel to the effective magnetic field of each grain, possibly due to the need for minimizing the total energy. The quantitative interpretation of the magnetic domain structure indicates that the large magnetoresistance in the studied LSMO films is mainly due to tunnel effect and scattering of conducted electrons at the nonmagnetic grain boundary phase related to the different configurations of magnetic domain states between neighboring grains.

  16. Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots

    SciTech Connect

    Varade, Vaibhav Jagtap, Amardeep M.; Koteswara Rao, K. S. R.; Ramesh, K. P.; Menon, R.; Anjaneyulu, P.

    2015-06-07

    Temperature and photo-dependent current–voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT:PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler–Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (∼ 400%), which is attributed to the charge transfer phenomena. The effective barrier height (Φ{sub B} ≈ 0.68 eV) is estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed.

  17. Precision timing detectors with cadmium-telluride sensor

    NASA Astrophysics Data System (ADS)

    Bornheim, A.; Pena, C.; Spiropulu, M.; Xie, S.; Zhang, Z.

    2017-09-01

    Precision timing detectors for high energy physics experiments with temporal resolutions of a few 10 ps are of pivotal importance to master the challenges posed by the highest energy particle accelerators such as the LHC. Calorimetric timing measurements have been a focus of recent research, enabled by exploiting the temporal coherence of electromagnetic showers. Scintillating crystals with high light yield as well as silicon sensors are viable sensitive materials for sampling calorimeters. Silicon sensors have very high efficiency for charged particles. However, their sensitivity to photons, which comprise a large fraction of the electromagnetic shower, is limited. To enhance the efficiency of detecting photons, materials with higher atomic numbers than silicon are preferable. In this paper we present test beam measurements with a Cadmium-Telluride (CdTe) sensor as the active element of a secondary emission calorimeter with focus on the timing performance of the detector. A Schottky type CdTe sensor with an active area of 1cm2 and a thickness of 1 mm is used in an arrangement with tungsten and lead absorbers. Measurements are performed with electron beams in the energy range from 2 GeV to 200 GeV. A timing resolution of 20 ps is achieved under the best conditions.

  18. Vapor crystal growth technology development: Application to cadmium telluride

    NASA Technical Reports Server (NTRS)

    Rosenberger, Franz; Banish, Michael; Duval, Walter M. B.

    1991-01-01

    Growth of bulk crystals by physical vapor transport was developed and applied to cadmium telluride. The technology makes use of effusive ampoules, in which part of the vapor contents escapes to a vacuum shroud through defined leaks during the growth process. This approach has the advantage over traditional sealed ampoule techniques that impurity vapors and excess vapor constituents are continuously removed from the vicinity of the growing crystal. Thus, growth rates are obtained routinely at magnitudes that are rather difficult to achieve in closed ampoules. Other advantages of this effusive ampoule physical vapor transport (EAPVT) technique include the predetermination of transport rates based on simple fluid dynamics and engineering considerations, and the growth of the crystal from close to congruent vapors, which largely alleviates the compositional nonuniformities resulting from buoyancy driven convective transport. After concisely reviewing earlier work on improving transport rates, nucleation control, and minimization of crystal wall interactions in vapor crystal growth, a detail account is given of the largely computer controlled EAPVT experimentation.

  19. Bioinspired inimitable cadmium telluride quantum dots for bioimaging purposes.

    PubMed

    Pawar, Vinay; Kumar, Ameeta Ravi; Zinjarde, Smita; Gosavi, Suresh

    2013-06-01

    Synthesis of quantum nanoparticles of specific size, shape and composition are an aspect important in nanotechnology research. Although these nanostructures are routinely synthesized by chemical routes, the use of microorganisms has emerged as a promising option. The synthesis of cadmium telluride (CdTe) quantum dots by two hitherto unreported marine bacteria (Bacillus pumilus and Serratia marcescens) is reported here. Ultraviolet-visible (UV-vis) spectroscopy indicated the synthesis of CdTe nanoparticles and X-ray diffraction (XRD) patterns implicated their crystalline face-centered cubic nature. The size of the synthesized CdTe nanostructures estimated by XRD and dynamic light scattering (DLS) analysis was found to be approximately 10 nm. Photoluminescence (PL) studies were used to confirm the fluorescence properties of these semi-conducting nanoparticles. Scanning electron microscope (SEM) analysis showed the presence of well-defined nanostructures and energy dispersive spectra (EDS) confirmed the microbial synthesis of these nanoparticles. These bio-inspired CdTe nanostructures could be effectively used in imaging of yeast and animal cells. This work thus describes a cost-effective green method for synthesizing highly fluorescent biocompatible CdTe nanoparticles suitable for bio-labeling purposes.

  20. Compensation mechanism of bromine dopants in cadmium telluride single crystals

    SciTech Connect

    Bolotnikov, A. E.; Fochuk, P. M.; Verzhak, Ye. V.; Parashchuk, T. O.; Freik, D. M.; Panchuk, O. E.; James, R. B.; Gorichok, I. V.

    2015-01-02

    We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and the parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.

  1. Compensation mechanism of bromine dopants in cadmium telluride single crystals

    DOE PAGES

    Bolotnikov, A. E.; Fochuk, P. M.; Verzhak, Ye. V.; ...

    2015-01-02

    We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and themore » parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.« less

  2. Determination of dispersion parameters of thermally deposited CdTe thin film

    SciTech Connect

    Dhimmar, J. M. Desai, H. N.; Modi, B. P.

    2016-05-23

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10{sup −6} torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm – 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  3. Effect of substrates on structural, optical, electrical and morphological properties of evaporated polycrystalline CdZnTe thin films

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Purohit, A.; Patel, S. L.; Dhaka, M. S.

    2017-05-01

    It is well known fact that the physical properties of a thin film could be tuned by substrate during deposition process. Therefore, a study on the effect of substrates on structural and opto-electrical properties and surface morphology of CdZnTe thin films (400 nm) deposited by electron beam evaporation onto commercial glass, indium tin oxide (ITO) and silicon wafer, has been undertaken. The films exhibited zinc-blende structure and grain size as well as other structural parameters (i.e. internal strain, dislocation density, lattice constant) were found to be affected by the nature of substrates. The optical band gap was found in the range 2.06-2.33 eV and depended on the substrates while the electrical conductivity was observed maximum for films on ITO substrate. The surface morphology of films was also found to be uniform and homogeneous.

  4. Origins of electrostatic potential wells at dislocations in polycrystalline Cu(In,Ga)Se{sub 2} thin films

    SciTech Connect

    Dietrich, J.; Abou-Ras, D. Schmidt, S. S.; Rissom, T.; Unold, T.; Cojocaru-Mirédin, O.; Niermann, T.; Lehmann, M.; Koch, C. T.; Boit, C.

    2014-03-14

    Thin-film solar cells based on Cu(In,Ga)Se{sub 2} (CIGSe) reach high power-conversion efficiencies in spite of large dislocation densities of up to 10{sup 10}–10{sup 11} cm{sup −2}. The present work gives insight into the structural and compositional properties of dislocations in CIGSe thin films, which are embedded in a complete solar cell stack. These properties are related to the average electrical potential distributions obtained by means of inline electron holography. At a part of the dislocations studied, the average electrostatic potential shows local minima, all with depths of about −1.4 V. The measured average electrostatic potential distributions were modeled in order to reveal possible influences from strain fields, excess charge, and also compositional changes at the dislocation core. Cu depletion around the dislocation core, as evidenced by atom-probe tomography, explains best the measured potential wells. Their influences of the strain field around the dislocation core and of excess charge at the dislocation core are small. A structural model of dislocations in CIGSe thin films is provided which includes a Cu-depleted region around the dislocation core and gives a possible explanation for why decent photovoltaic performances are possible in the presence of rather large dislocation densities.

  5. Origins of electrostatic potential wells at dislocations in polycrystalline Cu(In,Ga)Se2 thin films

    NASA Astrophysics Data System (ADS)

    Dietrich, J.; Abou-Ras, D.; Schmidt, S. S.; Rissom, T.; Unold, T.; Cojocaru-Mirédin, O.; Niermann, T.; Lehmann, M.; Koch, C. T.; Boit, C.

    2014-03-01

    Thin-film solar cells based on Cu(In,Ga)Se2 (CIGSe) reach high power-conversion efficiencies in spite of large dislocation densities of up to 1010-1011 cm-2. The present work gives insight into the structural and compositional properties of dislocations in CIGSe thin films, which are embedded in a complete solar cell stack. These properties are related to the average electrical potential distributions obtained by means of inline electron holography. At a part of the dislocations studied, the average electrostatic potential shows local minima, all with depths of about -1.4 V. The measured average electrostatic potential distributions were modeled in order to reveal possible influences from strain fields, excess charge, and also compositional changes at the dislocation core. Cu depletion around the dislocation core, as evidenced by atom-probe tomography, explains best the measured potential wells. Their influences of the strain field around the dislocation core and of excess charge at the dislocation core are small. A structural model of dislocations in CIGSe thin films is provided which includes a Cu-depleted region around the dislocation core and gives a possible explanation for why decent photovoltaic performances are possible in the presence of rather large dislocation densities.

  6. Biaxial Stress-Induced Domain Wall Motion at Room Temperature in Polycrystalline Lead Zirconium Titanate Thin Films

    NASA Astrophysics Data System (ADS)

    Zednik, Ricardo; McIntyre, Paul

    2007-03-01

    Wafer curvature methods can be used to impose pure biaxial tensile and compressive stresses on thin-films. This makes it possible to study the isolated effects of biaxial stress on the ferroelastic domains in ultra-fine grained PZT. Electrical measurements, such as capacitance-voltage and polarization-field hysteresis, were conducted as a function of applied stress and complemented with in-situ high resolution synchrotron X-ray diffraction measurements performed at the Stanford Synchrotron Radiation Laboratory. Systematic correlation of synchrotron scattering data with the electrical properties of the films shows that applied biaxial stress results in a marked change in the film's ferroelastic domain populations at room temperature. The large magnitude changes in ferroelectric and dielectric properties of thin film capacitors are consistent with the observed changes in relative volume fractions of the in-plane (a-axis) and out-of-plane (c-axis) oriented tetragonal PZT domains. This fully-reversible effect is symmetric in both tensile and compressive stress states. Our results, obtained from columnar-structure, fiber-textured PZT thin films, will be compared to reported data for ferroelastic domain wall motion in bulk and epitaxial specimens to assess the influence of PZT crystallite size and sample geometry on this phenomenon.

  7. Quantitative evaluation of sputtering induced surface roughness and its influence on AES depth profiles of polycrystalline Ni/Cu multilayer thin films

    NASA Astrophysics Data System (ADS)

    Yan, X. L.; Coetsee, E.; Wang, J. Y.; Swart, H. C.; Terblans, J. J.

    2017-07-01

    The polycrystalline Ni/Cu multilayer thin films consisting of 8 alternating layers of Ni and Cu were deposited on a SiO2 substrate by means of electron beam evaporation in a high vacuum. Concentration-depth profiles of the as-deposited multilayered Ni/Cu thin films were determined with Auger electron spectroscopy (AES) in combination with Ar+ ion sputtering, under various bombardment conditions with the samples been stationary as well as rotating in some cases. The Mixing-Roughness-Information depth (MRI) model used for the fittings of the concentration-depth profiles accounts for the interface broadening of the experimental depth profiling. The interface broadening incorporates the effects of atomic mixing, surface roughness and information depth of the Auger electrons. The roughness values extracted from the MRI model fitting of the depth profiling data agrees well with those measured by atomic force microscopy (AFM). The ion sputtering induced surface roughness during the depth profiling was accordingly quantitatively evaluated from the fitted MRI parameters with sample rotation and stationary conditions. The depth resolutions of the AES depth profiles were derived directly from the values determined by the fitting parameters in the MRI model.

  8. Chemical and electronic structure of surfaces and interfaces in cadmium telluride based photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Duncan, Douglas Arthur

    The surface and interface properties are of the upmost importance in the understanding, optimization, and application for photovoltaic devices. Often the chemical, electronic, and morphological properties of the films are empirically optimized, however when progress slows, a fundamental understanding of these properties can lead to breakthroughs. In this work, surfaces and interfaces of solar cell-relevant films are probed with a repertoire of X-ray analytical and microanalysis techniques including X-ray photoelectron (XPS), X-ray excited Auger electron (XAES), X-ray emission (XES) spectroscopies, and atomic force (AFM) and scanning electron (SEM) microscopies. Silicon-based devices currently dominate the solar market, which is rather inflexible in application. Cadmium telluride (CdTe)-based technologies offer a cost-effective alternative with additional benefits including roll-to-roll production and high conversion efficiencies. This, like other next generation thin film solar cells, needs more optimization to replace Si. The charge transport across a heterojunction is of great importance to drive up the conversion efficiency of the device. The interface of a CdS buffer layer and SnO2:F front contact was investigated as a function of CdCl2-treatment. In order to measure the fully formed interface, after subsequent layer deposition and heat treatments, mechanical stressing of the layer stack resulted in physical separation at the desired interface. By combining multiple spectroscopic and morphologic methods a complete picture has evolved. CdS is often used as a buffer layer in CdTe based devices. This layer is empirically optimized to be very thin (˜100 nm) due to the parasitic light absorption in and around the 2 eV range. By widening the band gap or replacing it with a more transparent material, more photons can be absorbed by the CdTe layer and significantly increase the overall conversion efficiency of the device. CdS:O and Zn(1-x)MgxO were studied as possible

  9. Directional Solidification of Mercury Cadmium Telluride in Microgravity

    NASA Technical Reports Server (NTRS)

    Lechoczhy, Sandor L.; Gillies, Donald C.; Szofran, Frank R.; Watring, Dale A.

    1998-01-01

    Mercury cadmium telluride (MCT) has been directionally solidified for ten days in the Advanced Automated Directional Solidification Furnace (AADSF) on the second United States Microgravity Payload Mission (USMP-2). A second growth experiment is planned for the USMP-4 mission in November 1997. Results from USMP-2 demonstrated significant changes between microgravity and ground-based experiments, particularly in the compositional homogeneity. Changes were also observed during the microgravity mission which were dependent on the attitude of the space shuttle and the relative magnitudes of axial and transverse residual accelerations with respect to the growth axis of the crystal. Issues of shuttle operation, especially those concerned with safety and navigation, and the science needs of other payloads dictated the need for changes in attitude. One consequence for solidification of MCT in the USMP4 mission is the desire for a shorter growth time to complete the experiment without subjecting the sample to shuttle maneuvers. By using a seeded technique and a pre-processed boule of MCT with an established diffusion layer quenched into the solid, equilibrium steady state growth can be established within 24 hours, rather than the three days needed in USMP-2. The growth of MCT in AADSF during the USMP-4 mission has been planned to take less than 72 hours with 48 hours of actual growth time. A review of the USMP-2 results will be presented, and the rationale for the USMP-4 explained. Pre-mission ground based tests for the USN4P-4 mission will be presented, as will any available preliminary flight results from the mission.

  10. Current transport mechanisms in mercury cadmium telluride diode

    NASA Astrophysics Data System (ADS)

    Gopal, Vishnu; Li, Qing; He, Jiale; He, Kai; Lin, Chun; Hu, Weida

    2016-08-01

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I-V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I-V characteristics have been modelled over a range of gate voltages from -9 V to -2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I-V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from -3 V to -5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  11. Current transport mechanisms in mercury cadmium telluride diode

    SciTech Connect

    Gopal, Vishnu E-mail: wdhu@mail.sitp.ac.cn; Li, Qing; He, Jiale; Hu, Weida E-mail: wdhu@mail.sitp.ac.cn; He, Kai; Lin, Chun

    2016-08-28

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  12. High-performance polycrystalline silicon thin-film transistors with two-dimensional location control of the grain boundary via excimer laser crystallization.

    PubMed

    Wang, Chao-Lung; Lee, I-Che; Wu, Chun-Yu; Liao, Chan-Yu; Cheng, Yu-Ting; Cheng, Huang-Chung

    2012-07-01

    High-performance low-temperature polycrystalline silicon (Poly-Si) thin-film transistors (TFTs) have been fabricated with two-dimensional (2-D) location-controlled grain boundaries using excimer laser crystallization (ELC). By locally increased thickness of the amorphous silicon (a-Si) film that was served as the seed crystals with a partial-melting crystallization scheme, the cross-shaped grain boundary structures were produced between the thicker a-Si grids. The Poly-Si TFTs with one parallel and one perpendicular grain boundary along the channel direction could therefore be fabricated to reach excellent field-effect mobility of 530 cm2/V-s while the conventional ones exhibited field-effect mobility of 198 cm2/V-s. Furthermore, the proposed TFTs achieved not only superior electric properties but also improved uniformity as compared with the conventional ones owing to the artificially controlled locations of grain boundaries.

  13. Charge retention characteristics of silicide-induced crystallized polycrystalline silicon floating gate thin-film transistors for active matrix organic light-emitting diode.

    PubMed

    Park, Jae Hyo; Son, Se Wan; Byun, Chang Woo; Kim, Hyung Yoon; Joo, So Na; Lee, Yong Woo; Yun, Seung Jae; Joo, Seung Ki

    2013-10-01

    In this work, non-volatile memory thin-film transistor (NVM-TFT) was fabricated by nickel silicide-induced laterally crystallized (SILC) polycrystalline silicon (poly-Si) as the active layer. The nickel seed silicide-induced crystallized (SIC) poly-Si was used as storage layer which is embedded in the gate insulator. The novel unit pixel of active matrix organic light-emitting diode (AMOLED) using NVM-TFT is proposed and investigated the electrical and optical performance. The threshold voltage shift showed 17.2 V and the high reliability of retention characteristic was demonstrated until 10 years. The retention time can modulate the recharge refresh time of the unit pixel of AMOLED up to 5000 sec.

  14. Controllability of self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors on a glass substrate

    NASA Astrophysics Data System (ADS)

    Ohsawa, Hiroki; Sasaki, Shun; Hara, Akito

    2016-03-01

    Self-aligned four-terminal n-channel (n-ch) and p-channel (p-ch) planar embedded metal double-gate polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at a low temperature of 550 °C. This device includes a metal top gate (TG) and a metal bottom gate (BG), which are used as the drive and control gates or vice versa. The BG was embedded in a glass substrate, and a poly-Si channel with large lateral grains was fabricated by continuous-wave laser lateral crystallization. The threshold voltage modulation factors under various control gate voltages (γ = ΔVth/ΔVCG) were nearly equal to the theoretical predictions in both the n- and p-ch TFTs. By exploiting this high controllability, an enhancement depletion (ED) inverter was fabricated, and successful operation at 2.0 V was confirmed.

  15. Chemical speciation at buried interfaces in high-temperature processed polycrystalline silicon thin-film solar cells on ZnO:Al

    NASA Astrophysics Data System (ADS)

    Becker, Christiane; Pagels, Marcel; Zachäus, Carolin; Pollakowski, Beatrix; Beckhoff, Burkhard; Kanngießer, Birgit; Rech, Bernd

    2013-01-01

    The combination of polycrystalline silicon (poly-Si) thin films with aluminum doped zinc oxide layers (ZnO:Al) as transparent conductive oxide enables the design of appealing optoelectronic devices at low costs, namely in the field of photovoltaics. The fabrication of both thin-film materials requires high-temperature treatments, which are highly desired for obtaining a high electrical material quality. Annealing procedures are typically applied during crystallization and defect-healing processes for silicon and can boost the carrier mobility and conductivity of ZnO:Al layers. In a combined poly-Si/ZnO:Al layer system, an in-depth knowledge of the interaction of both layers and the control of interface reactions upon thermal treatments is crucial. Therefore, we analyze the influence of rapid thermal treatments up to 1050 °C on solid phase crystallized poly-Si thin-film solar cells on ZnO:Al-coated glass, focusing on chemical interface reactions and modifications of the poly-Si absorber material quality. The presence of a ZnO:Al layer in the solar cell stack was found to limit the poly-Si solar cell performance with open circuit voltages only below 390 mV (compared to 435 mV without ZnO film), even if a silicon nitride (SiN) diffusion barrier was included. A considerable amount of diffused zinc inside the silicon was observed. By grazing-incidence X-ray fluorescence spectrometry, a depth-resolving analysis of the elemental composition close to the poly-Si/(SiN)/ZnO:Al interface was carried out. Temperatures above 1000 °C were found to promote the formation of new chemical compounds within about 10 nm of interface, such as zinc silicates (Zn2SiO4) and aluminium oxide (AlxOy). These results give valuable insights about the temperature-limitations of Si/ZnO thin-film solar cell fabrication and the formation of high-mobility ZnO-layers by thermal anneal.

  16. Ion-assisted laser deposition of intermediate layers for YBa2Cu3O7-δ thin film growth on polycrystalline and amorphous substrates

    SciTech Connect

    Reade, Ronald P.

    1993-11-01

    The growth of YBa2Cu3O7-δ (YBCO) high-temperature superconductor thin films has largely been limited to deposition on single-crystal substrates to date. In order to expand the range of potential applications, growth on polycrystalline and amorphous substrates is desirable. In particular, the deposition of YBCO thin films with high critical current densities on polycrystalline metal alloys would allow the manufacture of superconducting tapes. However, it is shown that it is not possible to grow YBCO thin films directly on this type of substrate due to chemical and structural incompatibility. This work investigates the use of a yttria-stabilized zirconia (YSZ) intermediate layer to address this problem. An ion-assisted pulsed-laser deposition process is developed to provide control of orientation during the growth of the YSZ layers. The important properties of YBCO and YSZ are summarized and the status of research on thin film growth of these materials is reviewed. An overview of the pulsed-laser deposition (PLD) technique is presented. The use of ion-assisted deposition techniques to control thin film properties is discussed.

  17. Cobalt-free polycrystalline Ba0.95La0.05FeO3-δ thin films as cathodes for intermediate-temperature solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Chen, Dengjie; Chen, Chi; Dong, Feifei; Shao, Zongping; Ciucci, Francesco

    2014-03-01

    Ba0.95La0.05FeO3-δ (BLF) thin films as electrodes for intermediate-temperature solid oxide fuel cells are prepared on single-crystal yttria-stabilized zirconia (YSZ) substrates by pulsed laser deposition. The phase structure, surface morphology and roughness of the BLF thin films are characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. X-ray photoelectron spectroscopy is used to analyze the compositions of the deposited thin film and the chemical state of transition metal. The dense thin film exhibits a polycrystalline perovskite structure with a low surface roughness and a high oxygen vacancy concentration on the surface. Ag (paste or strip) and Au (strip) are applied on both surfaces of the symmetric cells as current collectors to evaluate electrochemical performance of the thin films. The electrode polarization resistances of the symmetric cells are found to be lower than those of most cobalt-free thin-film electrodes, e.g., 0.437 Ω cm2 at 700 °C and 0.21 atm. The oxygen reduction reaction mechanism of the BLF cathode in symmetric cells is studied by electrochemical impedance spectroscopy thanks to the equivalent fitting analysis. Both the oxygen surface exchange reaction and charge transfer are shown to determine the overall oxygen reduction reaction.

  18. Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

    SciTech Connect

    Yun, J. Varalmov, S.; Huang, J.; Green, M. A.; Kim, K.

    2014-06-16

    The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-μm thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550 °C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450 °C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550 °C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450 °C, which limits the solar cell performance by n = 2 recombination, and a performance degradation is expected due to severe shunting.

  19. In-situ investigation of thermal instabilities and solid state dewetting in polycrystalline platinum thin films via confocal laser microscopy

    SciTech Connect

    Jahangir, S.; Cheng, Xuan; Huang, H. H.; Nagarajan, V.; Ihlefeld, J.

    2014-10-28

    Solid state dewetting and the subsequent morphological changes for platinum thin films grown on zinc oxide (ZnO) buffered (001) silicon substrates (Pt/ZnO/SiO{sub 2}/(001)Si system) is investigated under vacuum conditions via a custom-designed confocal laser microscope coupled with a laser heating system. Live imaging of thin film dewetting under a range of heating and quenching vacuum ambients reveals events including hillock formation, hole formation, and hole growth that lead to formation of a network of Pt ligaments, break up of Pt ligaments to individual islands and subsequent Pt islands shape reformation, in chronological fashion. These findings are corroborated by ex-situ materials characterization and quantitative electron microscopy analysis. A secondary hole formation via blistering before film rupture is revealed to be the critical stage, after which a rapid dewetting catastrophe occurs. This process is instantaneous and cannot be captured by ex-situ methods. Finally, an intermetallic phase forms at 900 °C and alters the morphology of Pt islands, suggesting a practical limit to the thermal environments that may be used for these platinized silicon wafers in vacuum conditions.

  20. Cadmium telluride in tellurium—cadmium films consisting of ultradispersed particles

    NASA Astrophysics Data System (ADS)

    Tuleushev, Yu. Zh.; Volodin, V. N.; Migunova, A. A.; Lisitsyn, V. N.

    2015-08-01

    Solid solutions of tellurium in cadmium, cadmium in tellurium, and cadmium in cadmium telluride synthesized during sputtering are formed for the first time by ion-plasma sputtering and the codeposition of ultradispersed Te and Cd particle fluxes onto substrates moving with respect to the fluxes. This fact supports thermofluctuation melting and coalescence of small particles. The lattice parameter of cadmium telluride, which coexists with an amorphous solid solution of tellurium in cadmium in a coating, is smaller than the tabulated value and reaches it when the cadmium concentration in a coating increases to 70 at %. The lattice parameter of the fcc lattice of cadmium telluride increases with the cadmium concentration in a coating according to the linear relation a = 0.0002CCd + 0.6346 nm (where CCd is the cadmium concentration in the coating, at %), which is likely to indicate a certain broadening of the homogeneity area. The estimation of the particle size shows that the cadmium telluride grain size is 10-15 nm, which implies that the coatings are nanocrystalline. The absorption and transmission spectra of the tellurium—cadmium films at the fundamental absorption edge demonstrate that their energy gaps are larger than that of stoichiometric CdTe, which can be explained by the experimental conditions of crystal structure formation.

  1. Optimization of chemical bath deposited cadmium sulfide thin films

    SciTech Connect

    Oladeji, I.O.; Chow, L.

    1997-07-01

    Cadmium sulfide (CdS) is known to be an excellent heterojunction partner of p-type cadmium telluride (CdTe) or p-type copper indium diselenide (CuInSe{sub 2}) due essentially to its high electron affinity. It is widely used as a window material in high efficiency thin-film solar cells based on CdTe or CuInSe{sub 2} owing to its transparency and photoconductivity among other properties. The authors report the optimization of CdS thin film grown by chemical bath deposition where homogeneous reactions are minimized. The optimum parameters have enabled them to maximize the thickness of the deposited film in a single dip and to grow thicker films by periodically replenishing the concentration of reactants while the substrate remains continuously dipped in the reaction bath. Characterization results reveal the deposited CdS films exhibit improved optical and electrical properties.

  2. Influence of plasma parameters and substrate temperature on the structural and optical properties of CdTe thin films deposited on glass by laser ablation

    SciTech Connect

    Quiñones-Galván, J. G.; Santana-Aranda, M. A.; Pérez-Centeno, A.; Camps, Enrique; Campos-González, E.; Guillén-Cervantes, A.; Santoyo-Salazar, J.; Zelaya-Angel, O.; Hernández-Hernández, A.

    2015-09-28

    In the pulsed laser deposition of thin films, plasma parameters such as energy and density of ions play an important role in the properties of materials. In the present work, cadmium telluride thin films were obtained by laser ablation of a stoichiometric CdTe target in vacuum, using two different values for: substrate temperature (RT and 200 °C) and plasma energy (120 and 200 eV). Structural characterization revealed that the crystalline phase can be changed by controlling both plasma energy and substrate temperature; which affects the corresponding band gap energy. All the thin films showed smooth surfaces and a Te rich composition.

  3. Hysteresis in single and polycrystalline iron thin films: Major and minor loops, first order reversal curves, and Preisach modeling

    NASA Astrophysics Data System (ADS)

    Cao, Yue; Xu, Ke; Jiang, Weilin; Droubay, Timothy; Ramuhalli, Pradeep; Edwards, Danny; Johnson, Bradley R.; McCloy, John

    2015-12-01

    Hysteretic behavior was studied in a series of Fe thin films, grown by molecular beam epitaxy, having different grain sizes and grown on different substrates. Major and minor loops and first order reversal curves (FORCs) were collected to investigate magnetization mechanisms and domain behavior under different magnetic histories. The minor loop coefficient and major loop coercivity increase with decreasing grain size due to higher defect concentration resisting domain wall movement. First order reversal curves allowed estimation of the contribution of irreversible and reversible susceptibilities and switching field distribution. The differences in shape of the major loops and first order reversal curves are described using a classical Preisach model with distributions of hysterons of different switching fields, providing a powerful visualization tool to help understand the magnetization switching behavior of Fe films as manifested in various experimental magnetization measurements.

  4. Surface Modification of Polycrystalline Cu(In,Ga)Se2 Thin-Film Solar Cell Absorber Surfaces for PEEM Measurements

    SciTech Connect

    Wilks, R. G.; Contreras, M. A.; Lehmann, S.; Herrero-Albillos, J.; Bismaths, L. T.; Kronast, F.; Noufi, R.; Bar, M.

    2011-01-01

    We present a thorough examination of the {micro}m-scale topography of Cu(In, Ga)Se{sub 2} ('CIGSe') thin-film solar cell absorbers using different microscopy techniques. We specifically focus on the efficacy of preparing smooth sample surfaces - by etching in aqueous bromine solution - for a spatially resolved study of their chemical and electronic structures using photoelectron emission microscopy (PEEM). The etching procedure is shown to reduce the CIGSe surface roughness from ca. 40 to 25 nm after 40s etching, resulting in an increase in the quality of the obtained PEEM images. Furthermore we find that the average observed grain size at the etched surfaces appears larger than at the unetched surfaces. Using a liftoff procedure, it is additionally shown that the backside of the absorber is flat but finely patterned, likely due to being grown on the finely-structured Mo back contact.

  5. The effect of Ta doping in polycrystalline TiO{sub x} and the associated thin film transistor properties

    SciTech Connect

    Ok, Kyung-Chul Park, Yoseb Park, Jin-Seong E-mail: jsparklime@hanyang.ac.kr; Chung, Kwun-Bum E-mail: jsparklime@hanyang.ac.kr

    2013-11-18

    Tantalum (Ta) is suggested to act as an electron donor and crystal phase stabilizer in titanium oxide (TiO{sub x}). A transition occurs from an amorphous state to a crystalline phase at an annealing temperature above 300 °C in a vacuum ambient. As the annealing temperature increases from 300 °C to 450 °C, the mobility increases drastically from 0.07 cm{sup 2}/Vs to 0.61 cm{sup 2}/Vs. The remarkable enhancement of thin film transistor performance is suggested to be due to the splitting of Ti 3d band orbitals as well as the increase in Ta{sup 5+} ions that can act as electron donors.

  6. Symmetry dependent optoelectronic properties of grain boundaries in polycrystalline Cu(In,Ga)Se{sub 2} thin films

    SciTech Connect

    Müller, Mathias; Bertram, Frank; Christen, Jürgen; Abou-Ras, Daniel Rissom, Thorsten

    2014-01-14

    In a correlative study applying electron backscatter diffraction as well as spatially and spectrally resolved cathodoluminescence spectroscopy at low temperatures of about 5 K, the symmetry-dependent optoelectronic properties of grain boundaries in Cu(In,Ga)Se{sub 2} thin films have been investigated. We find that grain boundaries with lower symmetries tend to show a distinct spectral red shift of about 10 meV and a weak influence on the emission intensity. These behaviors are not detected at high-symmetry Σ3 grain boundaries, or at least in a strongly reduced way. The investigations in the present work help to clarify the ambivalent properties reported for grain boundaries in Cu(In,Ga)Se{sub 2}.

  7. Hysteresis in single and polycrystalline iron thin films: Major and minor loops, first order reversal curves, and Preisach modeling

    DOE PAGES

    Cao, Yue; Xu, Ke; Jiang, Weilin; ...

    2015-07-03

    Hysteretic behavior was studied in a series of Fe thin films, grown by molecular beam epitaxy, having different grain sizes and grown on different substrates. Major and minor loops and first order reversal curves (FORCs) were collected to investigate magnetization mechanisms and domain behavior under different magnetic histories. The minor loop coefficient and major loop coercivity increase with decreasing grain size due to higher defect concentration resisting domain wall movement. First order reversal curves allowed estimation of the contribution of irreversible and reversible susceptibilities and switching field distribution. The differences in shape of the major loops and first order reversalmore » curves are described using a classical Preisach model with distributions of hysterons of different switching fields, providing a powerful visualization tool to help understand the magnetization switching behavior of Fe films as manifested in various experimental magnetization measurements.« less

  8. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

    PubMed Central

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-01-01

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at −0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature. PMID:27098115

  9. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.

    PubMed

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-04-21

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at -0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm(2)/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature.

  10. Exploration of maximum count rate capabilities for large-area photon counting arrays based on polycrystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua

    2016-03-01

    Pixelated photon counting detectors with energy discrimination capabilities are of increasing clinical interest for x-ray imaging. Such detectors, presently in clinical use for mammography and under development for breast tomosynthesis and spectral CT, usually employ in-pixel circuits based on crystalline silicon - a semiconductor material that is generally not well-suited for economic manufacture of large-area devices. One interesting alternative semiconductor is polycrystalline silicon (poly-Si), a thin-film technology capable of creating very large-area, monolithic devices. Similar to crystalline silicon, poly-Si allows implementation of the type of fast, complex, in-pixel circuitry required for photon counting - operating at processing speeds that are not possible with amorphous silicon (the material currently used for large-area, active matrix, flat-panel imagers). The pixel circuits of two-dimensional photon counting arrays are generally comprised of four stages: amplifier, comparator, clock generator and counter. The analog front-end (in particular, the amplifier) strongly influences performance and is therefore of interest to study. In this paper, the relationship between incident and output count rate of the analog front-end is explored under diagnostic imaging conditions for a promising poly-Si based design. The input to the amplifier is modeled in the time domain assuming a realistic input x-ray spectrum. Simulations of circuits based on poly-Si thin-film transistors are used to determine the resulting output count rate as a function of input count rate, energy discrimination threshold and operating conditions.

  11. Optoelectronic characterization of wide-bandgap (AgCu)(InGa)Se 2 thin-film polycrystalline solar cells including the role of the intrinsic zinc oxide layer

    NASA Astrophysics Data System (ADS)

    Obahiagbon, Uwadiae

    Experiments and simulations were conducted to vary the thickness and the sheet resistance of the high resistance (HR) ZnO layer in polycrystalline thin film (AgCu)(GaIn)Se2 (ACIGS) solar cells. The effect of varying these parameters on the electric field distribution, depletion width and hence capacitance were studied by SCAPS simulation. Devices were then fabricated and characterized by a number of optoelectronic techniques. Thin film CIGS has received a lot of attention, for its use as an absorber layer for thin film solar cells. However, the addition of Silver (Ag) to the CIGS alloy system increases the band gap as indicated from optical transmission measurements and thus higher open circuit voltage (Voc) could be obtained. Furthermore, addition of Ag lowers the melting temperature of the alloy and it is expected that this lowers the defect densities in the absorber and thus leads to higher performance. Transient photocapacitance analysis on ACIGS devices shows sharper band edge indicating lower disorder than CIGS. Presently there is a lack of fundamental knowledge relating film characteristics to device properties and performance. This is due to the fact that some features in the present solar cell structure have been optimized empirically. The goal of this research effort was to develop a fundamental and detailed understanding of the device operation as well as the loss mechanism(s) limiting these devices. Recombination mechanisms in finished ACIGS solar cell devices was studied using advanced admittance techniques (AS, DLCP, CV) to identify electronically active defect state(s) and to study their impact on electronic properties and device performance. Analysis of various optoelectronic measurements of ACIGS solar cells provided useful feedback regarding the impact on device performance of the HR ZnO layer. It was found that thickness between 10-100 nm had negligible impact on performance but reducing the thickness to 0 nm resulted in huge variability in all

  12. Measurement of Transient Tool Internal Temperature Fields by Novel Micro Thin Film Sensors Embedded in Polycrystalline Cubic Boron Nitride Cutting Inserts

    NASA Astrophysics Data System (ADS)

    Werschmoeller, Dirk

    Monitoring and control of thermomechanical phenomena in tooling are imperative for advancing fundamental understanding, enhancing reliability, and improving workpiece quality in material removal processes. Polycrystalline cubic boron nitride (PCBN) tools are being used heavily in numerous machining processes, e.g., machining of hardened low carbon steel and superalloys. These processes are very sensitive to variations in local cutting conditions at, or close to, the tool-workpiece interface, but lack a thorough understanding of fundamental transient thermo-mechanical phenomena present. As a result, abrupt catastrophic tool failures and degraded machined surfaces frequently occur. Existing sensors are not suitable for process control and monitoring, as they are either destructively embedded and/or do not possess the necessary spatial and temporal resolution to provide relevant data during machining. This research presents a novel approach for obtaining thermomechanical data from the close vicinity (i.e., 10s of micrometers) of the tool-workpiece interface. Arrays of micro thin film thermocouples with junction size 5 x 5 mum were fabricated by standard microfabrication methods and have been successfully embedded into PCBN using diffusion bonding. Electron microscopy and X-ray spectroscopy were employed to examine material interactions at the bonding interface and to determine optimal bonding parameters. Static and dynamic sensor performances have been characterized. The sensors exhibit excellent linearity up to 1300 °C, fast rise time of 150 ns, and possess good sensitivity. The inserts instrumented with embedded thin film C-type thermocouples were successfully applied to measure internal tool temperatures as close as 70 mum to the cutting edge while machining aluminum and hardened steel workpieces at industrially relevant cutting parameters. Acquired temperature data follow theoretical trends very well. Correlations between temperature and cutting parameters have

  13. Low-temperature (330 °C) crystallization and dopant activation of Ge thin films via AgSb-induced layer exchange: Operation of an n-channel polycrystalline Ge thin-film transistor

    NASA Astrophysics Data System (ADS)

    Suzuki, Tatsuya; Mutunga Joseph, Benedict; Fukai, Misato; Kamiko, Masao; Kyuno, Kentaro

    2017-09-01

    Ge thin films have been prepared by layer-exchange metal-induced crystallization using AgSb alloy as a catalyst. Not only the crystallization of Ge, but also the incorporation of Sb atoms into the crystalline Ge layer and their activation have been realized during the process at a temperature as low as 330 °C. Thin-film transistors have been fabricated using the Ge thin films as channel layers and the operation of an n-channel transistor with an on/off ratio of over 300 has been demonstrated.

  14. Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Titova, Lyubov V.; Cocker, Tyler L.; Xu, Sijia; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Hegmann, Frank A.

    2016-10-01

    We have used time-resolved terahertz spectroscopy to study microscopic photoconductivity and ultrafast photoexcited carrier dynamics in thin, pure, non-hydrogenated silicon films grown by molecular beam epitaxy on quartz substrates at temperatures ranging from 335 °C to 572 °C. By controlling the growth temperature, thin silicon films ranging from completely amorphous to polycrystalline with minimal amorphous phase can be achieved. Film morphology, in turn, determines its photoconductive properties: in the amorphous phase, carriers are trapped in bandtail states on sub-picosecond time scales, while the carriers excited in crystalline grains remain free for tens of picoseconds. We also find that in polycrystalline silicon the photoexcited carrier mobility is carrier-density-dependent, with higher carrier densities mitigating the effects of grain boundaries on inter-grain transport. In a film grown at the highest temperature of 572 °C, the morphology changes along the growth direction from polycrystalline with needles of single crystals in the bulk of the film to small crystallites interspersed with amorphous silicon at the top of the film. Depth profiling using different excitation wavelengths shows corresponding differences in the photoconductivity: the photoexcited carrier lifetime and mobility are higher in the first 100-150 nm from the substrate, suggesting that thinner, low-temperature grown polycrystalline silicon films are preferable for photovoltaic applications.

  15. Photoinduced current transient spectroscopy technique applied to the study of point defects in polycrystalline CdS thin films

    NASA Astrophysics Data System (ADS)

    El Akkad, Fikry; Ashour, Habib

    2009-05-01

    CdS thin films of variable thickness (between 160 and 1200 nm) were prepared using rf magnetron sputtering. X-ray diffraction measurements showed that the films have hexagonal structure and that the crystallites are preferentially oriented with the ⟨002⟩ axis perpendicular to the substrate surface. The results of electrical conductivity measurements as a function of film thickness and of temperature provide evidence that the conductivity is controlled by a thermally activated mobility in the presence of an intergrain barrier. The room temperature barrier height ϕ decreases with the increase in film thickness. Values of ϕ between 0 and 0.25 eV were determined. Photoinduced current transient spectroscopy performed on five samples having different thicknesses showed the presence of 11 traps with activation energies in the range 0.08-1.06 eV; deeper traps being observed on thinner films. By comparison with literature results, seven traps are attributed to native defects and foreign impurities (mainly Cu, Au, and Ag). Four other traps, not previously observed, are attributed to residual defects. The observation that deeper traps are detected in samples with larger barrier heights has been discussed and interpreted in terms of the energy band profile near the grain boundary.

  16. The structural, optical, and electrical properties of vacuum evaporated Cu-doped ZnTe polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Feng, L.; Mao, D.; Tang, J.; Collins, R. T.; Trefny, J. U.

    1996-09-01

    We have studied the structural, optical, and electrical properties of thermally evaporated, Cu-doped, ZnTe thin films as a function of Cu concentration and post-deposition annealing temperature. X-ray diffraction measurements showed that the ZnTe films evaporated on room temperature substrates were characterized by an average grain size of 300Å with a (111) preferred orientation. Optical absorption measurements yielded a bandgap of 2.21 eV for undoped ZnTe. A bandgap shrinkage was observed for the Cu-doped films. The dark resistivity of the as-deposited ZnTe decreased by more than three orders of magnitude as the Cu concentration was increased from 4 to 8 at.% and decreased to less than 1 ohm-cm after annealing at 260°C. For films doped with 6 7 at.% Cu, an increase of resistivity was also observed during annealing at 150 200°C. The activation energy of the dark conductivity was measured as a function of Cu concentration and annealing temperature. Hall measurements yielded hole mobility values in the range between 0.1 and 1 cm2/V·s for both as-deposited and annealed films. Solar cells with a CdS/CdTe/ZnTe/metal structure were fabricated using Cudoped ZnTe as a back contact layer on electrodeposited CdTe. Fill factors approaching 0.75 and energy conversion efficiencies as high as 12.1% were obtained.

  17. Structural, magnetic, and electrical studies on polycrystalline transition-metal-doped BiFeO(3) thin films.

    PubMed

    Kharel, P; Talebi, S; Ramachandran, B; Dixit, A; Naik, V M; Sahana, M B; Sudakar, C; Naik, R; Rao, M S R; Lawes, G

    2009-01-21

    We have synthesized a range of transition-metal-doped BiFeO(3) thin films on conducting silicon substrates using a spin-coating technique from metal-organic precursor solutions. Bismuth, iron and transition-metal-organic solutions were mixed in the appropriate ratios to produce 3% transition-metal-doped samples. X-ray diffraction studies show that the samples annealed in a nitrogen atmosphere crystallize in a rhombohedrally distorted BiFeO(3) structure with no evidence for any ferromagnetic secondary phase formation. We find evidence for the disappearance of the 404 cm(-1) Raman mode for certain dopants indicative of structural distortions. The saturation magnetization of these BiFeO(3) films has been found to increase on doping with transition metal ions, reaching a maximum value of 8.5 emu cm(-3) for the Cr-doped samples. However, leakage current measurements find that the resistivity of the films typically decreases with transition metal doping. We find no evidence for any systematic variation of the electric or magnetic properties of BiFeO(3) depending on the transition metal dopant, suggesting that these properties are determined mainly by extrinsic effects arising from defects or grain boundaries.

  18. Polarization Manipulation via Orientation Control in Polycrystalline BiFeO3 Thin Films on Biaxially Textured, Flexible Metallic Tapes

    NASA Astrophysics Data System (ADS)

    Shin, Junsoo; Goyal, Amit; Jesse, Stephen; Heatherly, Lee

    2011-02-01

    (111)-, (101)-, and (001)-oriented polycrystalline BiFeO3 films were fabricated on rolling-assisted biaxially textured substrates (RABiTS) with appropriate engineering of heteroepitaxially grown buffer multilayers on RABiTS. The crystallographic orientation and polarization direction were confirmed using X-ray diffraction and piezoresponse force microscopy (PFM), respectively. All the films exhibited excellent piezoelectric properties. Switching spectroscopy PFM demonstrated that the switching polarization in (111)-oriented polycrystalline BiFeO3 films is higher than that in (101)- or (001)-oriented films. These BiFeO3 films on low-cost, flexible, biaxially textured metallic tapes with controllable orientation and polarization are attractive for application in flexible piezoelectric devices.

  19. Oxidation of polycrystalline materials based on zinc and cadmium chalcogenides

    SciTech Connect

    Gunchenko, N.N.; Dronova, G.N.; Maksimova, I.A.; Mironov, I.A.; Pavlova, V.N.; Pevtsova, N.I.

    1988-06-01

    The resistance of polycrystalline zinc sulfide and selenide and cadmium telluride to atmospheric exposure in heating to 300-700/degrees/C was investigated. Polycrystalline zinc sulfide (KO-2 optical ceramic) was prepared by hot powder molding and zinc selenide and cadmium telluride were prepared by evaporation with filtrations of vapors through porous materials and subsequent condensation on a heated support. Zinc sulfide was most sensitive to oxidation. The rate of oxidation of polycrystals was slightly higher than for single crystals. The possibility of using oxidation for creating protective and antireflective coatings on zinc sulfide and selenide should be noted.

  20. Combinatorial investigation of the effects of sodium on Cu 2ZnSnSe4 polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Gibbs, Alex Hilton

    Cu2ZnSnSe4 (CZTSe) possess highly suitable optical and electronic properties for use as an absorber layer in thin film solar cells. CZTSe also has potential to achieve terawatt level solar energy production due to its inexpensive and abundant material constituents. Currently, fabricating CZTSe devices with the expected theoretical performance has not been achieved, making the growth and formation of CZTSe an interesting topic of research. In this work, a two-step vacuum fabrication process consisting of RF co-sputtering followed by reactive annealing was explored as a viable technique for synthesizing CZTSe thin films. Furthermore, the enhancement of the fabrication process by the incorporation of sodium during annealing was studied using a combinatorial approach. Film composition was analyzed using electron dispersive spectroscopy. Structure, phase morphology, and formation were determined using scanning electron microscopy, x-ray diffraction, atomic force microscopy and raman spectroscopy. Optical and electronic properties were characterized using UV-Vis and Voc were measurements under a one sun solar simulator. RF co-sputtering CuSe, ZnSe, and SnSe precursors produced films with good thickness uniformity, adhesion and stoichiometry control over 3 x 3 in 2 substrates. Composition measurements showed that the precursor films maintained stability during an annealing process of 580° C for 20 minutes producing near stoichiometric CZTSe. However, grain size was small with an average diameter of 350 nm. The CZTSe film produced by this process exhibited a suitable absorption coefficient of > 104 cm-1 and aband gap near 1.0 eV. The film also produced an XRD pattern consistent with tetragonal CZTSe with no secondary phase formation with the exception of approximately 12.5 nm of interfacial MoSe2 formation at the back contact. The combinatorial investigation of the influence of sodium on CZTSe growth and morphology was achieved using a custom built constant withdraw

  1. Structuring of thin film solar cells

    NASA Astrophysics Data System (ADS)

    Eberhardt, Gabriele; Banse, Henrik; Wagner, Uwe; Peschel, Thomas

    2010-02-01

    Laser structuring of different types of thin film layers is a state of the art process in the photovoltaic industry. TCO layers and molybdenum are structured with e.g. 1064 nm lasers. Amorphous silicon, microcrystalline silicon or cadmium telluride are ablated with 515/532 nm lasers. Typical pulse durations of the lasers in use for these material ablation processes are in the nanosecond range. Up to now the common process for CIS/CIGS cells is needle structuring. Hard metal needles scribe lines with a width of 30 to 60 μm into the semiconductor material. A laser technology would have some advantages compared to mechanical scribing. The precision of the lines would be higher (no chipping effects), the laser has no wear out. The dead area (distance from P1 structuring line to P3 structuring line) can be significantly smaller with the laser technology. So we investigate the structuring of CIS/CIGS materials with ultra short pulse lasers of different wavelengths. The ablation rates and the structuring speeds versus the repetition rates have been established. For the different layer thicknesses and line widths we determined the necessary energy densities. After all tests we can calculate the possible reduction of the dead area on the thin film module. The new technology will result in an increase in the efficiency per module of up to 4 %.

  2. Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

    NASA Astrophysics Data System (ADS)

    Tarasov, I. A.; Visotin, M. A.; Aleksandrovsky, A. S.; Kosyrev, N. N.; Yakovlev, I. A.; Molokeev, M. S.; Lukyanenko, A. V.; Krylov, A. S.; Fedorov, A. S.; Varnakov, S. N.; Ovchinnikov, S. G.

    2017-10-01

    This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition ( 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of 0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of 0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.

  3. Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.

    PubMed

    Chen, Bo-Wei; Chang, Ting-Chang; Chang, Kuan-Chang; Hung, Yu-Ju; Huang, Shin-Ping; Chen, Hua-Mao; Liao, Po-Yung; Lin, Yu-Ho; Huang, Hui-Chun; Chiang, Hsiao-Cheng; Yang, Chung-I; Zheng, Yu-Zhe; Chu, Ann-Kuo; Li, Hung-Wei; Tsai, Chih-Hung; Lu, Hsueh-Hsing; Wang, Terry Tai-Jui; Chang, Tsu-Chiang

    2017-04-05

    The surface morphology in polycrystalline silicon (poly-Si) film is an issue regardless of whether conventional excimer laser annealing (ELA) or the newer metal-induced lateral crystallization (MILC) process is used. This paper investigates the stress distribution while undergoing long-term mechanical stress and the influence of stress on electrical characteristics. Our simulated results show that the nonuniform stress in the gate insulator is more pronounced near the polysilicon/gate insulator edge and at the two sides of the polysilicon protrusion. This stress results in defects in the gate insulator and leads to a nonuniform degradation phenomenon, which affects both the performance and the reliability in thin-film transistors (TFTs). The degree of degradation is similar regardless of bending axis (channel-length axis, channel-width axis) or bending type (compression, tension), which means that the degradation is dominated by the protrusion effects. Furthermore, by utilizing long-term electrical bias stresses after undergoing long-tern bending stress, it is apparent that the carrier injection is severe in the subchannel region, which confirms that the influence of protrusions is crucial. To eliminate the influence of surface morphology in poly-Si, three kinds of laser energy density were used during crystallization to control the protrusion height. The device with the lowest protrusions demonstrates the smallest degradation after undergoing long-term bending.

  4. Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Hishitani, Daisuke; Horita, Masahiro; Ishikawa, Yasuaki; Ikenoue, Hiroshi; Uraoka, Yukiharu

    2017-05-01

    The formation of perhydropolysilazane (PHPS)-based SiO2 films by CO2 laser annealing is proposed. Irradiation with a CO2 laser with optimum fluence transformed a prebaked PHPS film into a SiO2 film with uniform composition in the thickness direction. Polycrystalline silicon thin-film transistors (poly-Si TFTs) with a SiO2 film as the gate insulator were fabricated. When the SiO2 film was formed by CO2 laser annealing (CO2LA) at the optimum fluence of 20 mJ/cm2, the film had fewer OH groups which was one-twentieth that of the furnace annealed PHPS film and one-hundredth that of the SiO2 film deposited by plasma-enhanced chemical vapor deposition (PECVD) using tetraethyl orthosilicate (TEOS). The resulting TFTs using PHPS showed a clear transistor operation with a field-effect mobility of 37.9 ± 1.2 cm2 V-1 s-1, a threshold voltage of 9.8 ± 0.2 V, and a subthreshold swing of 0.76 ± 0.02 V/decade. The characteristics of such TFTs were as good as those of a poly-Si TFT with a SiO2 gate insulator prepared by PECVD using TEOS.

  5. Self-aligned metal double-gate junctionless p-channel low-temperature polycrystalline-germanium thin-film transistor with thin germanium film on glass substrate

    NASA Astrophysics Data System (ADS)

    Hara, Akito; Nishimura, Yuya; Ohsawa, Hiroki

    2017-03-01

    Low-temperature (LT) polycrystalline-germanium (poly-Ge) thin-film transistors (TFTs) are viable contenders for use in the backplanes of flat-panel displays and in systems-on-glass because of their superior electrical properties compared with silicon and oxide semiconductors. However, LT poly-Ge shows strong p-type characteristics. Therefore, it is not easy to reduce the leakage current using a single-gate structure such as a top-gate or bottom-gate structure. In this study, self-aligned planar metal double-gate p-channel junctionless LT poly-Ge TFTs are fabricated on a glass substrate using a 15-nm-thick solid-phase crystallized poly-Ge film and aluminum-induced lateral metallization source-drain regions (Al-LM-SD). A nominal field-effect mobility of 19 cm2 V-1 s-1 and an on/off ratio of 2 × 103 were obtained by optimizing the Al-LM-SD on a glass substrate through a simple, inexpensive LT process.

  6. Abnormal Threshold Voltage Shifts in P-Channel Low-Temperature Polycrystalline Silicon Thin Film Transistors Under Negative Bias Temperature Stress.

    PubMed

    Kim, Sang Sub; Choi, Pyung Ho; Baek, Do Hyun; Lee, Jae Hyeong; Choi, Byoung Deog

    2015-10-01

    In this research, we have investigated the instability of P-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS TFTs) with double-layer SiO2/SiNx dielectrics. A negative gate bias temperature instability (NBTI) stress was applied and a turn-around behavior phenomenon was observed in the Threshold Voltage Shift (Vth). A positive threshold voltage shift occurs in the first stage, resulting from the negative charge trapping at the SiNx/SiO2 dielectric interface being dominant over the positive charge trapping at dielectric/Poly-Si interface. Following a stress time of 7000 s, the Vth switches to the negative voltage direction, which is "turn-around" behavior. In the second stage, the Vth moves from -1.63 V to -2 V, overwhelming the NBTI effect that results in the trapping of positive charges at the dielectric/Poly-Si interface states and generating grain-boundary trap states and oxide traps.

  7. Atomic-resolution study of dislocation structures and interfaces in poly-crystalline thin film CdTe using aberration-corrected STEM

    NASA Astrophysics Data System (ADS)

    Paulauskas, Tadas; Colegrove, Eric; Buurma, Chris; Kim, Moon; Klie, Robert

    2014-03-01

    Commercial success of CdTe-based thin film photovoltaic devices stems from its nearly ideal direct band gap which very effectively couples to Sun's light spectrum as well as ease of manufacturing and low cost of these modules. However, to further improve the conversion efficiency beyond 20 percent, it is important to minimize the harmful effects of grain boundaries and lattice defects in CdTe. Direct atomic-scale characterization is needed in order identify the carrier recombination centers. Likewise, it is necessary to confirm that passivants in CdTe, such as Cl, are able to diffuse and bind to the target defects. In this study, we characterize dislocation structures and grain boundaries in poly-crystalline CdTe using aberration-corrected cold-field emission scanning transmission electron microscopy (STEM). The chemical composition of Shockley partial, Frank and Lomer-Cottrell dislocations is examined via atomic column-resolved X-ray energy dispersive (XEDS) and electron energy-loss spectroscopies (EELS). Segregation of Cl towards dislocation cores and grain boundaries is shown in CdCl2 treated samples. We also investigate interfaces in ultra-high-vacuum bonded CdTe bi-crystals with pre-defined misorientation angles which are intended to mimic grain boundaries. Funded by: DOE EERE Sunshot Award EE0005956.

  8. Evaluation of Electrical Characteristics and Trap-State Density in Bottom-Gate Polycrystalline Thin Film Transistors Processed with High-Pressure Water Vapor Annealing

    NASA Astrophysics Data System (ADS)

    Kunii, Masafumi

    2006-02-01

    This paper discusses electrical characteristics and trap-state density in polycrystalline silicon (poly-Si) used in bottom-gate poly-Si thin film transistors (TFTs) processed with high-pressure water vapor annealing (HWA). The threshold voltage uniformity of the HWA-processed TFTs is improved by 42% for N-channel and 38% for P-channel TFTs in terms of standard deviation, and carrier mobility is enhanced by 10% or greater for both N- and P-channel TFTs than those TFTs processed conventionally. Subthreshold swing is also improved by HWA, showing that HWA postannealing is effective for improving the Si/SiO2 interface of the bottom-gate TFTs. Two types of TFTs having different poly-Si crystallinities are examined to investigate carrier transport in poly-Si processed by HWA postannealing. The evaluation of trap-state density for the two types of poly-Si reveals that HWA postannealing is more efficient for N-channel than for P-channel TFTs. Furthermore, HWA postannealing is more effective for poly-Si with high crystallinity to improve TFT characteristics. The analysis of the trap-state distributions and the activation energy of TFT drain current indicate that HWA deactivates dangling bonds highly localized at poly-Si grain boundaries (GBs). Thus, HWA postannealing effects can be interpreted by a GB barrier potential model similar to that applied to conventional hydrogenation.

  9. Effects of gate insulator using high pressure annealing on the characteristics of solid phase crystallized polycrystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Moojin; Jin, GuangHai

    2009-04-01

    The oxidizing ambient was built using high pressure H2O vapor at 550 °C. For the solid phase crystallization (SPC) polycrystalline silicon (poly-Si) that is annealed for 1 h at 2 MPa, the oxide thickness is about 150 Å. The oxide layer is approximately 90 Å above the original surface of the poly-Si and 60 Å below the original surface. The oxide layer is used as the first gate insulator layer of thin-film transistors (TFTs). The heating at 550 °C with 2 MPa H2O vapor increased the carrier mobility from 17.6 cm2/V s of the conventional SPC process to 30.4 cm2/V s, and it reduced the absolute value of the threshold voltage (Vth) from 4.13 to 3.62 V. The subthreshold swing also decreased from 0.72 to 0.60 V/decade. This improvement is attributed mainly to the reduction in defect density at the oxide/poly-Si interface and in the poly-Si film by the high pressure annealing (HPA) process. Since the realization of excellent performance at the oxide/poly-Si interface and in poly-Si depends on the defect density, the poly-Si having the thermal oxide formed by a combined process of SPC and HPA may be well suited for fabrication of poly-Si TFTs for flat panel displays such as active matrix organic light emitting diodes.

  10. Superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} thin films on polycrystalline ferrite for magnetically tunable microwave components

    SciTech Connect

    Jia, Q.X.; Findikoglu, A.T.; Arendt, P.; Foltyn, S.R.; Roper, J.M.; Groves, J.R.; Coulter, J.Y.; Li, Y.Q.; Dionne, G.F.

    1998-04-01

    Superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO) thin films with a surface resistance of 0.86 m{Omega} at 10 GHz and 76 K have been grown on polycrystalline ferrite yttrium iron garnet (YIG) substrates. The chemical and structural mismatches between YBCO and YIG are solved by using a double buffer layer of biaxially oriented yttria-stabilized zirconia (YSZ) and CeO{sub 2}, where YSZ is deposited by an ion-beam-assisted-deposition technique. The YBCO films are {ital c} axis oriented with an in-plane mosaic spread [full width at half maximum of an x-ray {phi}-scan on (103) reflection] of less than 8{degree}. The films have a superconductive transition temperature above 88 K with a transition width less than 0.3 K, giving a critical current density above 10{sup 6}A/cm{sup 2} in self field at 75 K. At 75 K in an external magnetic field of 1 T perpendicular to the film surface, the films maintain a critical current density over 2{times}10{sup 5}A/cm{sup 2}. {copyright} {ital 1998 American Institute of Physics.}

  11. Polycrystalline CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, April 15, 1992--April 14, 1993

    SciTech Connect

    Dhere, N.G.

    1994-08-01

    The principal objective of the research project is to develop processes for the fabrication of cadmium-telluride, CdTe, and copper-indium-gallium-diselenide, Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2}, polycrystalline-thin-film solar cells using techniques that can be scaled-up for economic manufacture on a large scale. The aims are to fabricate CdTe solar cells using Cd and Te layers sputtered from elemental targets; to promote the interdiffusion between Cd/Te layers, CdTe phase formation, and grain growth; to utilize non-toxic selenization so as to avoid the use of extremely toxic H{sub 2}Se in the fabrication of Cu(In{sub l{minus}x}Ga{sub x})Se{sub 2} thin-film solar cells; to optimize selenization parameters; to improve adhesion; to minimize residual stresses; to improve the uniformity, stoichiometry, and morphology of CdTe and Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2} thin films, and the efficiency of CdTe and Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2} solar cells.

  12. Microstructure imaging of C54-TiSi2 polycrystalline thin films by micro-Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Meinardi, F.; Quilici, S.; Borghesi, A.; Artioli, G.

    1999-11-01

    The morphology of C54-TiSi2 polycrystalline films has been revealed by the micro-Raman imaging technique. This was based on the calculation of the symmetries of the Raman active vibrations of the C54-TiSi2 single crystal and subsequent polarized Raman measurements to detect and unambiguously label all the expected peaks. The relative intensity of two suitable peaks was monitored and mapped on C54-TiSi2 blanket films. Grains with different orientation are clearly detectable, and the microstructure properties of the film can be analyzed.

  13. Analysis and optimization of thin film photovoltaic materials and device fabrication by real time spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Li, Jian; Stoke, Jason A.; Podraza, Nikolas J.; Sainju, Deepak; Parikh, Anuja; Cao, Xinmin; Khatri, Himal; Barreau, Nicolas; Marsillac, Sylvain; Deng, Xunming; Collins, Robert W.

    2007-09-01

    Methods of spectroscopic ellipsometry (SE) have been applied to investigate the growth and properties of the material components used in the three major thin film photovoltaics technologies: (1) hydrogenated silicon (Si:H); (2) cadmium telluride (CdTe); and (3) copper indium-gallium diselenide (CuIn 1-xGa xSe2 or CIGS). In Si:H technology, real time SE (RTSE) has been applied to establish deposition phase diagrams that describe very high frequency (vhf) plasmaenhanced chemical vapor deposition (PECVD) processes for hydrogenated silicon (Si:H) and silicon-germanium alloy (Si 1-xGe x:H) thin films. This study has reaffirmed that the highest efficiencies for a-Si:H and a-Si 1-xGe x:H component solar cells of multijunction devices are obtained when the i-layers are prepared under maximal H II dilution conditions. In CdTe technology, the magnetron sputter deposition of polycrystalline CdTe, CdS, and CdTe 1-xS x thin films as well as the formation of CdS/CdTe and CdTe/CdS heterojunctions has been studied. The nucleation and growth behaviors of CdTe and CdS show strong variations with deposition temperature, and this influences the ultimate grain size. The dielectric functions ɛ of the CdTe 1-xS x alloys have been deduced in order to set up a database for real time investigation of inter-diffusion at the CdS/CdTe and CdTe/CdS interfaces. In CIGS technology, strong variations in ɛ of the Mo back contact during sputter deposition have been observed, and these results have been understood applying a Drude relaxation time that varies with the Mo film thickness. Ex-situ SE measurements of a novel In IIS 3 window layer have shown critical point structures at 2.77+/-0.08 eV, 4.92+/-0.005 eV, and 5.64+/-0.005 eV, as well as an absorption tail with an onset near 1.9 eV. Simulations of solar cell performance comparing In IIS 3 and the conventional CdS have revealed similar quantum efficiencies, suggesting the possibility of a Cd-free window layer in CIGS technology.

  14. Cadmium Telluride Quantum Dots as a Fluorescence Marker for Adipose Tissue Grafts.

    PubMed

    Deglmann, Claus J; Błażków-Schmalzbauer, Katarzyna; Moorkamp, Sarah; Susha, Andrei S; Herrler, Tanja; Giunta, Riccardo E; Wagner, Ernst; Rogach, Andrey L; Baumeister, Ruediger G; Ogris, Manfred

    2017-02-01

    Plastic and reconstructive surgeons increasingly apply adipose tissue grafting in a clinical setting, although the anticipation of graft survival is insecure. There are only few tools for tracking transplanted fat grafts in vivo.Murine adipose tissue clusters were incubated with negatively charged, mercaptoproprionic acid-coated cadmium telluride quantum dots (QDs) emitting in the dark red or near infrared. The intracellular localization of QDs was studied by confocal laser scanning microscopy.As a result, the adipose tissue clusters showed a proportional increase in fluorescence with increasing concentrations (1, 10, 16, 30, 50 nM) of cadmium telluride QDs. Laser scanning microscopy demonstrated a membrane bound localization of QDs. Vacuoles and cell nuclei of adipocytes were spared by QDs. We conclude that QDs were for the first time proven intracellular in adult adipocytes and demonstrate a strong fluorescence signal. Therefore, they may play an essential role for in vivo tracking of fat grafts.

  15. Method for improving the growth of cadmium telluride on a gallium arsenide substrate

    SciTech Connect

    Reno, J.L.

    1990-12-31

    A method for preparing a gallium arsenide substrate, prior to growing a layer of cadmium telluride on a support surface thereof. The preparation includes the steps of cleaning the gallium arsenide substrate and thereafter forming prepatterned shapes on the support surface of the gallium arsenide substrate. The layer of cadmium telluride then grown on the prepared substrate results in dislocation densities of approximately 1{times}10{sup 6}/cm{sup 2} or less. The prepatterned shapes on the support surface of the gallium arsenide substrate are formed by reactive ion etching an original outer surface of the gallium arsenide substrate and into the body of the gallium arsenide substrate to a depth of at least two microns. The prepatterned shapes have the appearance of cylindrical mesas each having a diameter of at lease twelve microns. After the mesas are formed on the support surface of the gallium arsenide substrate, the substrate is again cleaned.

  16. Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

    DOEpatents

    Findikoglu, Alp T.; Jia, Quanxi; Arendt, Paul N.; Matias, Vladimir; Choi, Woong

    2009-10-27

    A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

  17. Self-consistent modelling of X-ray photoelectron spectra from air-exposed polycrystalline TiN thin films

    NASA Astrophysics Data System (ADS)

    Greczynski, G.; Hultman, L.

    2016-11-01

    We present first self-consistent modelling of x-ray photoelectron spectroscopy (XPS) Ti 2p, N 1s, O 1s, and C 1s core level spectra with a cross-peak quantitative agreement for a series of TiN thin films grown by dc magnetron sputtering and oxidized to different extent by varying the venting temperature Tv of the vacuum chamber before removing the deposited samples. So-obtained film series constitute a model case for XPS application studies, where certain degree of atmosphere exposure during sample transfer to the XPS instrument is unavoidable. The challenge is to extract information about surface chemistry without invoking destructive pre-cleaning with noble gas ions. All TiN surfaces are thus analyzed in the as-received state by XPS using monochromatic Al Kα radiation (hν = 1486.6 eV). Details of line shapes and relative peak areas obtained from deconvolution of the reference Ti 2p and N 1 s spectra representative of a native TiN surface serve as an input to model complex core level signals from air-exposed surfaces, where contributions from oxides and oxynitrides make the task very challenging considering the influence of the whole deposition process at hand. The essential part of the presented approach is that the deconvolution process is not only guided by the comparison to the reference binding energy values that often show large spread, but in order to increase reliability of the extracted chemical information the requirement for both qualitative and quantitative self-consistency between component peaks belonging to the same chemical species is imposed across all core-level spectra (including often neglected O 1s and C 1s signals). The relative ratios between contributions from different chemical species vary as a function of Tv presenting a self-consistency check for our model. We propose that the cross-peak self-consistency should be a prerequisite for reliable XPS peak modelling as it enhances credibility of obtained chemical information, while relying

  18. Spectral properties of powder preparations of cadmium telluride and cadmium selenide with controlled nonstoichiometry

    NASA Astrophysics Data System (ADS)

    Khomyakov, A. V.; Mozhevitina, E. N.; Kuz'min, V. V.; Kon'kova, N. A.; Avetissov, I. Ch.

    2015-03-01

    The reflection spectra of powder preparations of cadmium telluride and cadmium selenide with different contents of overstoichiometric components have been investigated in the range of 800-1700 nm. The reflectance is found to be maximum for samples with compositions close to stoichiometric. An increase in the concentration of overstoichiometric cadmium more radically reduces the reflectance in comparison with preparations containing excess chalcogen. It is shown that halftone images in the near-IR range can be formed by using of these materials.

  19. Structure and dynamics of cadmium telluride studied by x-ray and inelastic neutron scattering

    SciTech Connect

    Niedziela, Jennifer L; Stone, Matthew B

    2014-01-01

    We present a combined study of density functional theory, x-ray diffraction, and inelastic neutron scattering examining the temperature dependent structure and lattice dynamics of commercially available cadmium telluride. A subtle change in the structure is evinced near 80~K, which manifests also in the measured phonon density of states. There is no change to the long-range ordered structure. The implications of the change in relation to structural defects are discussed.

  20. Structure and dynamics of cadmium telluride studied by x-ray and inelastic neutron scattering

    SciTech Connect

    Niedziela, J. L.; Stone, M. B.

    2014-09-08

    We present a combined study of density functional theory, x-ray diffraction, and inelastic neutron scattering examining the temperature dependent structure and lattice dynamics of commercially available cadmium telluride. A subtle change in the structure is evinced near 80 K, which manifests also in the measured phonon density of states. There is no change to the long-range ordered structure. The implications of the change in relation to structural defects are discussed.

  1. Chemical surface modification of polycrystalline platinum thin-films to promote preferential chemisorption of n-hexane, piperidine, and cyclohexane

    SciTech Connect

    Thomas, V.; Schwank, J.; Gland, J.

    1994-12-31

    In this study, hard/soft Lewis acid-base (HSAB) principles are used to modify a thin-polycrystalline platinum film to promote preferential chemisorption of molecules such as piperidine, n-hexane, and cyclohexane. Specifically, the particle size and electron density distribution of the platinum surface is modified using thermal treatment and co-adsorption of electro-positive and negative species. These studies are conducted in an ultra-high vacuum chamber. The platinum surface is characterized, before and after modification protocols, using a variety of in-situ and ex-situ techniques. These include temperature programmed desorption (TPD), both resistance change and work function measurements, and both X-ray photoelectron spectroscopy and diffraction.

  2. Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor

    SciTech Connect

    Hashimoto, Masaki; Kanomata, Kensaku; Momiyama, Katsuaki; Kubota, Shigeru; Hirose, Fumihiko

    2012-01-09

    In this study, we developed a measurement method for field-effect-carrier mobility across a single grain boundary in polycrystalline Si (poly Si) used for solar cell production by using an organic gate field-effect transistor (FET). To prevent precipitation and the diffusion of impurities affecting the electronic characteristics of the grain boundary, all the processing temperatures during FET fabrication were held below 150 deg. C. From the grain boundary, the field-effect mobility was measured at around 21.4 cm{sup 2}/Vs at 297 K, and the temperature dependence of the field-effect mobility suggested the presence of a potential barrier of 0.22 eV at the boundary. The technique presented here is applicable for the monitoring of carrier conduction characteristics at the grain boundary in poly Si used for the production of solar cells.

  3. Photovoltaic mechanisms in polycrystalline thin film silicon solar cells. Quarterly technical progress report No. 1, July 30-October 31, 1980

    SciTech Connect

    Sopori, B.

    1980-07-30

    Major accomplishments during the first quarter of the contract period are reported. Small area diode fabrication and analysis has been continued. This technique has further been applied to many RTR ribbons. An optical technique for determination of crystallite orientations has been placed in operation. This technique has many distinct advantages. These are: (1) rapid; (2) can be set-up very inexpensively; (3) well suited for polycrystalline substrates of small grain size; and (4) can easily characterize twins. Accuracies obtained with this technique are about the same as that of the Laue technique. A technique to qualitatively evaluate grain boundary activity in unprocessed substrates has been used and valuable results obtained. Further analysis is being done to use this technique for quantitative evaluation. A major study of G.B. orientation effects is underway. Initial results on RTR ribbons have shown a good correlation of G.B. barrier height with misorientation (tilt boundaries).

  4. Photovoltaic mechanisms in polycrystalline thin film silicon solar cells. Final report, 30 June 1979-29 June 1980

    SciTech Connect

    Sopori, B.L.

    1980-11-01

    The objectives of this program were: (1) to develop appropriate measurement techniques to facilitate a quantitative study of the electrical activity of structural defects and at a grain boundary (G.B.) in terms of generation-recombination, barrier height, and G.B. conductivity; (2) to characterize G.B.s in terms of physical properties such as angle of misfit and local stress, and to correlate them with the electrical activity; (3) to determine the influence of solar cell processing on the electrical behavior of structural defects and G.B.s; and (4) to evaluate polycrystalline solar cell performance based on the above study, and to compare it with the experimentally measured performance. Progress is reported in detail. (WHK)

  5. Temperature- and doping-concentration-dependent characteristics of junctionless gate-all-around polycrystalline-silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Tso, Chia-Tsung; Liu, Tung-Yu; Pan, Fu-Ming; Sheu, Jeng-Tzong

    2017-04-01

    The temperature effects of both gate-all-around polycrystalline silicon nanowire (GAA poly-Si NW) junctionless (JL) and inversion mode (IM) transistor devices at various temperatures (77–410 K) were investigated. The electrical characteristics of these devices, such as subthreshold swing (SS), threshold voltage (V th), and drain-induced barrier lowering (DIBL), were also characterized and compared in this study. Moreover, JL devices with different doping concentrations at various temperatures were also discussed. Both V th and I on showed significant doping concentration dependences for JL devices with doping concentrations of 1 × 1019 and 5 × 1019 cm‑3. However, the electrical characteristics of JL devices showed less thermal sensitivity when the doping concentration reached 1020 cm‑3.

  6. Photoluminescence Excitation Spectroscopy Characterization of Cadmium Telluride Solar Cells

    SciTech Connect

    Moore, James E.; Wang, Xufeng; Grubbs, Elizabeth K.; Drayton, Jennifer; Johnston, Steve; Levi, Dean; Lundstrom, Mark S.; Bermel, Peter

    2016-11-21

    The use of steady-state photoluminescence spectroscopy as a contactless characterization tool, suitable for inline optical characterization, has been previously demonstrated for high efficiency solar cells such as GaAs. In this paper, we demonstrate the use of PLE characterization on a thin film CdS/CdTe np heterojunction solar cell, and compare the results to measured EQE and I-V data. In contrast to previous work on high-quality GaAs, the PLE and EQE spectra do not match closely here. We still find, however, that reliable material parameters can be extracted from the PLE measurements. We also provide a physical explanation of the limits defining the cases when the PLE and EQE spectra may be expected to match.

  7. Thin Film?

    NASA Astrophysics Data System (ADS)

    Kariper, İ. Afşin

    2014-09-01

    This study focuses on the critical surface tension of lead sulfite (PbSO3) crystalline thin film produced with chemical bath deposition on substrates (commercial glass).The PbSO3 thin films were deposited at room temperature at different deposition times. The structural properties of the films were defined and examined according to X-ray diffraction (XRD) and the XRD results such as dislocation density, average grain size, and no. of crystallites per unit area. Atomic force microscopy was used to measure the film thickness and the surface properties. The critical surface tension of the PbSO3 thin films was measured with an optical tensiometer instrument and calculated using the Zisman method. The results indicated that the critical surface tension of films changed in accordance with the average grain size and film thickness. The film thickness increased with deposition time and was inversely correlated with surface tension. The average grain size increased according to deposition time and was inversely correlated with surface tension.

  8. Thin-film-based CdTe photovoltaic module characterization: Measurements and energy prediction improvement

    NASA Astrophysics Data System (ADS)

    Lay-Ekuakille, A.; Arnesano, A.; Vergallo, P.

    2013-01-01

    Photovoltaic characterization is a topic of major interest in the field of renewable energy. Monocrystalline and polycrystalline modules are mostly used and, hence characterized since many laboratories have data of them. Conversely, cadmium telluride (CdTe), as thin-film module are, in some circumstances, difficult to be used for energy prediction. This work covers outdoor testing of photovoltaic modules, in particular that regarding CdTe ones. The scope is to obtain temperature coefficients that best predict the energy production. A First Solar (K-275) module has been used for the purposes of this research. Outdoor characterizations were performed at Department of Innovation Engineering, University of Salento, Lecce, Italy. The location of Lecce city represents a typical site in the South Italy. The module was exposed outdoor and tested under clear sky conditions as well as under cloudy sky ones. During testing, the global-inclined irradiance varied between 0 and 1500 W/m2. About 37 000 I-V characteristics were acquired, allowing to process temperature coefficients as a function of irradiance and ambient temperature. The module was characterized by measuring the full temperature-irradiance matrix in the range from 50 to 1300 W/m2 and from -1 to 40 W/m2 from October 2011 to February 2012. Afterwards, the module energy output, under real conditions, was calculated with the "matrix method" of SUPSI-ISAAC and the results were compared with the five months energy output data of the same module measured with the outdoor energy yield facility in Lecce.

  9. Thin-film-based CdTe photovoltaic module characterization: measurements and energy prediction improvement.

    PubMed

    Lay-Ekuakille, A; Arnesano, A; Vergallo, P

    2013-01-01

    Photovoltaic characterization is a topic of major interest in the field of renewable energy. Monocrystalline and polycrystalline modules are mostly used and, hence characterized since many laboratories have data of them. Conversely, cadmium telluride (CdTe), as thin-film module are, in some circumstances, difficult to be used for energy prediction. This work covers outdoor testing of photovoltaic modules, in particular that regarding CdTe ones. The scope is to obtain temperature coefficients that best predict the energy production. A First Solar (K-275) module has been used for the purposes of this research. Outdoor characterizations were performed at Department of Innovation Engineering, University of Salento, Lecce, Italy. The location of Lecce city represents a typical site in the South Italy. The module was exposed outdoor and tested under clear sky conditions as well as under cloudy sky ones. During testing, the global-inclined irradiance varied between 0 and 1500 W/m(2). About 37,000 I-V characteristics were acquired, allowing to process temperature coefficients as a function of irradiance and ambient temperature. The module was characterized by measuring the full temperature-irradiance matrix in the range from 50 to 1300 W/m(2) and from -1 to 40 W/m(2) from October 2011 to February 2012. Afterwards, the module energy output, under real conditions, was calculated with the "matrix method" of SUPSI-ISAAC and the results were compared with the five months energy output data of the same module measured with the outdoor energy yield facility in Lecce.

  10. Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lee, Sang-hoon; Jung, Jae-soo; Lee, Sung-soo; Lee, Sung-bo; Hwang, Nong-moon

    2016-11-01

    For the applications such as flexible displays and solar cells, the direct deposition of crystalline silicon films on a flexible polymer substrate has been a great issue. Here, we investigated the direct deposition of polycrystalline silicon films on a polyimide film at the substrate temperature of 200 °C. The low temperature deposition of crystalline silicon on a flexible substrate has been successfully made based on two ideas. One is that the Si-Cl-H system has a retrograde solubility of silicon in the gas phase near the substrate temperature. The other is the new concept of non-classical crystallization, where films grow by the building block of nanoparticles formed in the gas phase during hot-wire chemical vapor deposition (HWCVD). The total amount of precipitation of silicon nanoparticles decreased with increasing HCl concentration. By adding HCl, the amount and the size of silicon nanoparticles were reduced remarkably, which is related with the low temperature deposition of silicon films of highly crystalline fraction with a very thin amorphous incubation layer. The dark conductivity of the intrinsic film prepared at the flow rate ratio of RHCl=[HCl]/[SiH4]=3.61 was 1.84×10-6 Scm-1 at room temperature. The Hall mobility of the n-type silicon film prepared at RHCl=3.61 was 5.72 cm2 V-1s-1. These electrical properties of silicon films are high enough and could be used in flexible electric devices.

  11. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors

    PubMed Central

    El-Mohri, Youcef; Antonuk, Larry E.; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A.; Lu, Jeng-Ping

    2009-01-01

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and∕or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of ∼10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical fill

  12. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors.

    PubMed

    El-Mohri, Youcef; Antonuk, Larry E; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A; Lu, Jeng-Ping

    2009-07-01

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and/or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of approximately 10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in

  13. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors

    SciTech Connect

    El-Mohri, Youcef; Antonuk, Larry E.; Koniczek, Martin; Zhao Qihua; Li Yixin; Street, Robert A.; Lu Jengping

    2009-07-15

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and/or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of {approx}10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical

  14. Thin Films

    NASA Astrophysics Data System (ADS)

    Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza

    2014-11-01

    Effect of annealing temperature on the characteristics of sol-gel-driven Ta ax La(1- a) x O y thin film spin-coated on Si substrate as a high- k gate dielectric was studied. Ta ax La(1- a) x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3 x La0.7 x Oy film had an amorphous structure. Therefore, Ta0.3 x La0.7 x O y film was chosen to continue the present studies. The morphology of Ta0.3 x La0.7 x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3 x La0.7 x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3 x La0.7 x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10-6 A/cm2 at 1 V).

  15. Thin Films

    NASA Astrophysics Data System (ADS)

    Naffouti, Wafa; Nasr, Tarek Ben; Mehdi, Ahmed; Kamoun-Turki, Najoua

    2014-11-01

    Titanium dioxide (TiO2) thin films were synthesized on glass substrates by spray pyrolysis. The effect of solution flow rate on the physical properties of the films was investigated by use of x-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy (AFM), and spectrophotometry techniques. XRD analysis revealed the tetragonal anatase phase of TiO2 with highly preferred (101) orientation. AFM images showed that grain size on top of TiO2 thin films depended on solution flow rate. An indirect band gap energy of 3.46 eV was determined by means of transmission and reflection measurements. The envelope method, based on the optical transmission spectrum, was used to determine film thickness and optical constants, for example real and imaginary parts of the dielectric constant, refractive index, and extinction coefficient. Ultraviolet and visible photoluminescence emission peaks were observed at room temperature. These peaks were attributed to the intrinsic emission and to the surface defect states, respectively.

  16. Advanced methods for preparation and characterization of infrared detector materials. [mercury cadmium telluride alloys

    NASA Technical Reports Server (NTRS)

    Lehoczky, S. L.; Szofran, F. R.

    1981-01-01

    Differential thermal analysis data were obtained on mercury cadmium telluride alloys in order to establish the liquidus temperatures for the various alloy compositions. Preliminary theoretical analyses was performed to establish the ternary phase equilibrium parameters for the metal rich region of the phase diagram. Liquid-solid equilibrium parameters were determined for the pseudobinary alloy system. Phase equilibrium was calculated and Hg(l-x) Cd(x) Te alloys were directionally solidified from pseudobinary melts. Electrical resistivity and Hall coefficient measurements were obtained.

  17. Specific features of the photoconductivity of semi-insulating cadmium telluride

    SciTech Connect

    Golubyatnikov, V. A.; Grigor’ev, F. I.; Lysenko, A. P. Strogankova, N. I.; Shadov, M. B.; Belov, A. G.

    2014-12-15

    The effect of local illumination providing a high level of free-carrier injection on the conductivity of a sample of semi-insulating cadmium telluride and on the properties of ohmic contacts to the sample is studied. It is found that, irrespective of the illumination region, the contact resistance of ohmic contacts decreases and the concentration of majority carriers in the sample grows in proportion to the illumination intensity. It is shown that inherent heterogeneities in crystals of semi-insulating semiconductors can be studied by scanning with a light probe.

  18. Cadmium Telluride Semiconductor Detector for Improved Spatial and Energy Resolution Radioisotopic Imaging.

    PubMed

    Abbaspour, Samira; Mahmoudian, Babak; Islamian, Jalil Pirayesh

    2017-01-01

    The detector in single-photon emission computed tomography has played a key role in the quality of the images. Over the past few decades, developments in semiconductor detector technology provided an appropriate substitution for scintillation detectors in terms of high sensitivity, better energy resolution, and also high spatial resolution. One of the considered detectors is cadmium telluride (CdTe). The purpose of this paper is to review the CdTe semiconductor detector used in preclinical studies, small organ and small animal imaging, also research in nuclear medicine and other medical imaging modalities by a complete inspect on the material characteristics, irradiation principles, applications, and epitaxial growth method.

  19. Cadmium Telluride Semiconductor Detector for Improved Spatial and Energy Resolution Radioisotopic Imaging

    PubMed Central

    Abbaspour, Samira; Mahmoudian, Babak; Islamian, Jalil Pirayesh

    2017-01-01

    The detector in single-photon emission computed tomography has played a key role in the quality of the images. Over the past few decades, developments in semiconductor detector technology provided an appropriate substitution for scintillation detectors in terms of high sensitivity, better energy resolution, and also high spatial resolution. One of the considered detectors is cadmium telluride (CdTe). The purpose of this paper is to review the CdTe semiconductor detector used in preclinical studies, small organ and small animal imaging, also research in nuclear medicine and other medical imaging modalities by a complete inspect on the material characteristics, irradiation principles, applications, and epitaxial growth method. PMID:28553175

  20. Uniaxially oriented polycrystalline thin films and air-stable n-type transistors based on donor-acceptor semiconductor (diC8BTBT)(FnTCNQ) [n = 0, 2, 4

    NASA Astrophysics Data System (ADS)

    Shibata, Yosei; Tsutsumi, Jun'ya; Matsuoka, Satoshi; Matsubara, Koji; Yoshida, Yuji; Chikamatsu, Masayuki; Hasegawa, Tatsuo

    2015-04-01

    We report the fabrication of high quality thin films for semiconducting organic donor-acceptor charge-transfer (CT) compounds, (diC8BTBT)(FnTCNQ) (diC8BTBT = 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene and FnTCNQ [n = 0,2,4] = fluorinated derivatives of 7,7,8,8,-tetracyanoquinodimethane), which have a high degree of layered crystallinity. Single-phase and uniaxially oriented polycrystalline thin films of the compounds were obtained by co-evaporation of the component donor and acceptor molecules. Organic thin-film transistors (OTFTs) fabricated with the compound films exhibited n-type field-effect characteristics, showing a mobility of 6.9 × 10-2 cm2/V s, an on/off ratio of 106, a sub-threshold swing of 0.8 V/dec, and an excellent stability in air. We discuss the suitability of strong intermolecular donor-acceptor interaction and the narrow CT gap nature in compounds for stable n-type OTFT operation.

  1. Surface modification of grains with silver nano-clusters: a new route to great enhancement of photoluminescence in Eu³⁺-doped ferroelectric polycrystalline oxide thin films.

    PubMed

    Su, Li; Qin, Ni; Sa, Tongliang; Bao, Dinghua

    2013-12-02

    We report on a new route to greatly enhance the photoluminescence of Eu³⁺ doped ferroelectric polycrystalline oxide thin films: surface modification of grains with silver nanoclusters (NCs). The Ag doped Bi₃.₆Eu₀.₄Ti₃O₁₂ (BET) thin films were prepared by a chemical solution deposition method. According to the XRD, TEM and XPS analysis, partially oxidated Ag NCs have been formed on the surfaces of the BET grains. A greatly enhanced photoluminescence was obtained in a wide range of Ag doping level. Role of the Ag NCs in the photoluminescence enhancement was investigated by means of absorption, emission and excitation spectra, as well as decay lifetime measurement. The results indicate that the intra-4f transition of Eu³⁺ can be intensively activated by the coupling of the charge transfer band of BET with the ⁵D₀ state of Eu³⁺ ions, and the enhancement of Eu³⁺ ions emission in the present thin films was attributed to the surface modification of BET crystalline grains by Ag NCs. In addition, the influences of Ag NCs on the dielectric and ferroelectric properties of these materials were discussed as well.

  2. Effects of contact-based non-uniformities in cadmium sulfide/cadmium telluride thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Davies, Alan R.

    To strongly contribute to the near-term electricity supply, CdTe-based photovoltaic devices must continue to improve in performance under the constraint of simple and cost efficient fabrication methods. This dissertation focuses on characterization and modeling of devices with non-uniform performance induced by the cell contacts. Devices were obtained from a commercially viable pilot-scale fabrication system at Colorado State University. Current versus voltage (J-V), quantum efficiency (QE) and laser-beam-induced current (LBIC) were the main characterization techniques applied in this work. The p-type CdTe semiconductor has a large work-function and thus tends to form a Schottky barrier when the back-electrode is formed. A common strategy of mitigating the performance-limiting contact barrier is to prepare the CdTe surface with a chemical etch, and include Cu to reduce the effective barrier. Non-uniformity of the etch or Cu inclusion, or insufficient application of Cu can result in a non-uniform contact, with regions of high- and low-energy Schottky barriers participating in the cell performance. Barrier non-uniformities in devices with little or no Cu were identified with the LBIC measurement and a model for their influence was developed and tested using PSpice circuit modeling software. Because of their superstrate configuration, CdTe cells feature front contacts made from transparent-conducting oxides (TCOs). Fluorine-doped tin oxide (F:SnO2) is a common choice because of its availability and acceptable optical and electrical properties. When the n-CdS layer of the CdS/CdTe structure is thinned to encourage greater current generation, non-uniformities of the solar cell junction arise, as CdTe comes into sporadic contact with the TCO layer. Device simulations suggest that the SnO2/CdTe junction is weaker than CdS/CdTe because of a large conduction-band offset induced by the differing electron affinities in the heterojunction. LBIC was used to verify increasing non-uniformity in devices with thin CdS and whole-cell performance followed the trends predicted by simulations. An empirical relationship between CdS thickness and relative influence the weaker junction was developed. The practical limit of CdS thickness was determined to be about 120 nm for CSU devices.

  3. Cadmium sulfide thin films deposited by close spaced sublimation and cadmium sulfide/cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Marinskiy, Dmitriy Nikolaevich

    1998-12-01

    One of the applications of CdS films is as a window layer in CdTe and Cu(In,Ga)Sesb2 solar cells. The study of the optical and structural properties of CdS films deposited by close spaced sublimation as well as their influence on CdS/CdTe solar cell performance is part of the CdTe solar cell program at the University of South Florida. CdS films have been deposited by the close-spaced sublimation technique. The influence of the main process parameters, the substrate and source temperatures, and the ambient in the deposition chamber has been investigated. As-deposited films have been subjected to heat treatments in Hsb2 ambient, in CdClsb2 atmosphere, and in atmosphere with small amounts of oxygen. A special annealing chamber was built to carry out the annealing experiments in the presence of CdClsb2 vapor and oxygen. Several CSS chambers were assembled to study the influence of various process parameters simultaneously and validate the results. Results of scanning electron microscopy and photoluminescence measurements have been used as the primary characterization techniques. X-ray diffraction, electron microprobe analysis, and transmission measurements have also been carried out. It was found that as deposited CdS films have a hexagonal structure independent of the process parameters used. The presence of a CdO phase was detected in the samples grown with the highest oxygen concentration in the ambient. The resistivity of CdS films is controlled by intergrain barriers. Photoluminescence measurements showed the presence of oxygen-acceptor transition and a wide variation in the intensity of deep emission bands. The variation in the intensities was correlated with the variation in the deposition and annealing conditions. However, no correlation was found between the PL intensities of defect bands and cell performance. CdS/CdTe junctions have been fabricated using standard deposition and postgrowth techniques developed in the USF solar cells laboratory. All cells have been characterized by light and dark current-voltage (I-V) measurements. Based on the I-V results samples were selected for Quantum Efficiency (QE), and I-V-T measurements. The goal of this project was to understand what properties of CdS are important for the formation of a good electrical CdS/CdTe junction and high efficiency solar cells. It was found that passivation of the CdS/CdTe interface is essential to obtain efficient devices. The passivation can be achieved by promoting mixing at the interface or by performing a heat treatment of the CdS surface prior to the CdTe deposition. For the latter case no noticeable intermixing at the CdS/CdTe interface occurs. Therefore, it is suggested that the CdS/CdTe interface is the most critical part of the device and the condition of the CdS surface just before CdTe deposition is one of the factors controlling its formation. To date, the best device has shown an efficiency of 15.1% as verified at the National Renewable Energy Laboratory. It is the highest efficiency reported for an all CSS fabricated solar cell. The best all CSS device fabricated on LOF glass substrate demonstrated an efficiency of 14.3%, which is a new record for the USF solar cell laboratory.

  4. Polycrystalline BiFeO{sub 3} thin film synthesized via sol-gel assisted spin coating technique for photosensitive application

    SciTech Connect

    Bogle, K. A. Narwade, R. D.; Mahabole, M. P.; Khairnar, R. S.; Phatangare, A. B.; Dahiwale, S. S.

    2016-05-06

    We are reporting photosensitivity property of BiFeO{sub 3} thin film under optical illumination. The thin film used for photosensitivity work was fabricated via sol-gel assisted spin coating technique. I-V measurements on the Cu/BiFeO{sub 3}/Al structure under dark condition show a good rectifying property and show dramatic blue shit in threshold voltage under optical illumination. The microstructure, morphology and elemental analysis of the films were characterized by using XRD, UV-Vis, FTIR, SEM and EDS.

  5. Identification of critical stacking faults in thin-film CdTe solar cells

    SciTech Connect

    Yoo, Su-Hyun; Walsh, Aron; Butler, Keith T.; Soon, Aloysius; Abbas, Ali; Walls, John M.

    2014-08-11

    Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl{sub 2} is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

  6. The set of photoelectromagnetic methods for determination of recombination and diffusion parameters of p-MCT thin films

    NASA Astrophysics Data System (ADS)

    Protasov, D. Y.; Trifanov, A. V.; Kostyuchenko, V. Y.

    2013-06-01

    In this paper the set of photoelectromagnetic methods for determination of recombination and diffusion parameters of charge carriers in p-type mercury cadmium telluride epitaxial thin films at temperature range 77-125 K is offered. The set of methods includes the photoconductivity in magnetic field for Faraday and Voigt geometries, the photoelectromagnetic effect, the Hall effect and the measurements of magnetoconductivity. Such films parameters as concentrations and mobilities of heavy and light holes, mobility of minor electrons, electrons lifetime and ratio between holes and electrons lifetimes, surface recombination velocities can be determined with help of offered set.

  7. Mechanics of cadmium telluride-zinc telluride nucleation on (112) Si for mercury cadmium telluride infrared photo-diode arrays

    NASA Astrophysics Data System (ADS)

    Dhar, Nibir Kumar

    Epitaxy of CdTe/ZnTe on the extremely large lattice mismatched Si leads to high density of dislocations, multi-domain facets, rough surface morphology, and often Cd-terminated surface polarity. These problems, related to the mode of nucleation and growth, limit its application to manufacture improved HgCdTe based large area infrared focal plane arrays. Thermo-kinetics of ZnTe nucleation on "atomically" clean, and arsenic modified nominal and vicinal (112) Si surfaces were investigated in a molecular beam epitaxy system. Transition state theory was invoked to understand and model ZnTe nucleation processes. Thin ZnTe templates were fabricated by: (1) migration enhanced epitaxy (MEE), and (2) crystallized amorphous deposits for relaxed epitaxy (CADRE) procedure developed in this research. MBE CdTe/ZnTe/Si structures were characterized, and used to make improved HgCdTe detector arrays. MEE ZnTe nucleation produced small, but misoriented islands. Nucleation involved dissociative adsorption of Tesb2 into highly immobile chemisorbed atoms, with Si-Te covalent bond energy of 3.46 ± 0.1 eV. CdTe layers were heavily twinned, with high dislocation densities, and crystallographic facets; surface morphologies were rough, and exhibited temperature dependent polarity transformation. The CADRE process led to polycrystalline CdTe/ZnTe structures. MEE ZnTe growth on As-terminated Si surfaces was initially by Stranski-Krastanaw mode via chemisorption of tellurium atoms which produced (2sqrt{3} x 2sqrt{3})R30 reconstructed surfaces. The CADRE process did not involve island nucleation. CdTe layers deposited on ZnTe templates prepared by MEE and CADRE were Te-terminated, with extremely good morphologies. For nominal Si, twin concentrations were two orders of magnitude lower than in equivalent structures grown on "atomically" clean Si surfaces. Twin free CdTe layers with dislocation densities in the range of 1-5 × 10sp5 cmsp{-2} were obtained by the CADRE technique. A model is proposed

  8. Role of the copper-oxygen defect in cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Corwine, Caroline R.

    Thin-film CdTe is one of the leading materials used in photovoltaic (PV) solar cells. One way to improve device performance and stability is through understanding how various device processing steps alter defect states in the CdTe layer. Photoluminescence (PL) studies can be used to examine radiative defects in materials. This study uses low-temperature PL to probe the defects present in thin-film CdTe deposited for solar cells. One key defect seen in the thin-film CdTe was reproduced in single-crystal (sX) CdTe by systematic incorporation of known impurities in the thin-film growth process, hence demonstrating that both copper and oxygen were necessary for its formation. Polycrystalline (pX) thin-film glass/SnO2:F/CdS/CdTe structures were examined. The CdTe layer was grown via close-spaced sublimation (CSS), vapor transport deposition (VTD), and physical vapor deposition (PVD). After CdTe deposition, followed by a standard CdC12 treatment and a ZnTe:Cu back contact, a PL peak was seen at ˜1.46 eV from the free back surface of all samples (1.456 eV for CSS and PVD, 1.460-1.463 eV for VTD). However, before the Cu-containing contact was added, this peak was not seen from the front of the CdTe (the CdS/CdTe junction region) in any device with CdTe thickness greater than 4 mum. The CdCl2 treatment commonly used to increase CdTe grain size did not enhance or reduce the peak at ˜1.46 eV relative to the rest of the PL spectrum. When the Cu-containing contact was applied, the PL spectra from both the front and back of the CdTe exhibited the peak at 1.456 eV. The PL peak at ˜1.46 eV was present in thin-film CdTe after deposition, when the dominant impurities are expected to be both Cu from the CdTe source material and O introduced in the chamber during growth to assist in CdTe film density. Since Cu and/or O appeared to be involved in this defect, PL studies were done with sX CdTe to distinguish between the separate effects of Cu or O and the combined effect of Cu and O

  9. Time resolved photo-luminescent decay characterization of mercury cadmium telluride focal plane arrays

    SciTech Connect

    Soehnel, Grant

    2015-01-20

    The minority carrier lifetime is a measurable material property that is an indication of infrared detector device performance. To study the utility of measuring the carrier lifetime, an experiment has been constructed that can time resolve the photo-luminescent decay of a detector or wafer sample housed inside a liquid nitrogen cooled Dewar. Motorized stages allow the measurement to be scanned over the sample surface, and spatial resolutions as low as 50µm have been demonstrated. A carrier recombination simulation was developed to analyze the experimental data. Results from measurements performed on 4 mercury cadmium telluride focal plane arrays show strong correlation between spatial maps of the lifetime, dark current, and relative response.

  10. Time resolved photo-luminescent decay characterization of mercury cadmium telluride focal plane arrays

    DOE PAGES

    Soehnel, Grant

    2015-01-20

    The minority carrier lifetime is a measurable material property that is an indication of infrared detector device performance. To study the utility of measuring the carrier lifetime, an experiment has been constructed that can time resolve the photo-luminescent decay of a detector or wafer sample housed inside a liquid nitrogen cooled Dewar. Motorized stages allow the measurement to be scanned over the sample surface, and spatial resolutions as low as 50µm have been demonstrated. A carrier recombination simulation was developed to analyze the experimental data. Results from measurements performed on 4 mercury cadmium telluride focal plane arrays show strong correlationmore » between spatial maps of the lifetime, dark current, and relative response.« less

  11. Development of Cadmium Telluride Detectors for Hard X-ray Astronomy

    NASA Astrophysics Data System (ADS)

    Pike, Sean; Harrison, Fiona; Burnham, Jill; Cook, Rick; Grefenstette, Brian; Madsen, Kristin; Miyasaka, Hiromasa; Rana, Vikram

    2017-08-01

    We present findings on the development of hybrid Cadmium Telluride (CdTe) detectors for applications in space-based X-ray astronomy. In addition to presenting the components and design of the detectors, which consist of 2cm × 2cm × 2mm CdTe crystals mounted on a custom ASIC, we also determine their viability for scientific applications. We present results of spectral calibration using 57Co, 155Eu, and 241Am sources, noise calibration, as well as optimal operating conditions including temperature, guard ring voltage, and bias voltage. By comparing these CdTe detectors to previous generations of detectors, in particular the Cadmium Zinc Telluride (CZT) detectors launched onboard NuSTAR in 2012, we hope to show that hybrid CdTe detectors are uniquely suited to high-resolution X-ray astronomy above the energy ranges of current comparable observatories.

  12. Imaging characteristics of zinc sulfide shell, cadmium telluride core quantum dots.

    PubMed

    Daneshvar, Hamid; Nelms, Jennifer; Muhammad, Osman; Jackson, Heather; Tkach, Jean; Davros, William; Peterson, Todd; Vogelbaum, Michael A; Bruchez, Marcel P; Toms, Steven A

    2008-02-01

    Quantum dots are optical nanocrystals whose in vitro and in vivo use in molecular imaging is expanding rapidly. In comparison with organic fluorophores, quantum dots exhibit desirable properties, such as multiwavelength fluorescence emission, excellent brightness and resistance to photobleaching. Their electron-dense, metallic cores suggest utility in other clinical imaging modalities. Core-shell zinc sulfide-cadmium telluride quantum dots were studied by magnetic resonance and computed tomography phantoms. Quantum dots were also injected into rat brain, as well as intravenously, using convection-enhanced delivery, prior to animal imaging. Computed tomography studies suggest that current formulations of quantum dots might be imaged in vivo in animals. Used in conjunction with optical imaging techniques, quantum dots have the potential to function as multimodal imaging platforms in vivo. The ability to detect an optical nanoparticle preoperatively with clinical imaging modality offers a distinct advantage to clinicians engaged in image-guided surgical applications.

  13. Fluorescent cadmium telluride quantum dots embedded chitosan nanoparticles: a stable, biocompatible preparation for bio-imaging.

    PubMed

    Ghormade, Vandana; Gholap, Haribhau; Kale, Sonia; Kulkarni, Vaishnavi; Bhat, Suresh; Paknikar, Kishore

    2015-01-01

    Fluorescent cadmium telluride quantum dots (CdTe QDs) are an optically attractive option for bioimaging, but are known to display high cytotoxicity. Nanoparticles synthesized from chitosan, a natural biopolymer of β 1-4 linked glucosamine, display good biocompatibility and cellular uptake. A facile, green synthetic strategy has been developed to embed green fluorescent cadmium telluride quantum dots (CdTe QDs) in biocompatible CNPs to obtain a safer preparation than 'as is' QDs. High-resolution transmission electron microscopy showed the crystal lattice corresponding to CdTe QDs embedded in CNPs while thermogravimetry confirmed their polymeric composition. Electrostatic interactions between thiol-capped QDs (4 nm, -57 mV) and CNPs (~300 nm, +38 mV) generated CdTe QDs-embedded CNPs that were stable up to three months. Further, viability of NIH3T3 mouse fibroblast cells in vitro increased in presence of QDs-embedded CNPs as compared to bare QDs. At the highest concentration (10 μg/ml), the former shows 34 and 39% increase in viability at 24 and 48 h, respectively, as compared to the latter. This shows that chitosan nanoparticles do not release the QDs up to 48 h and do not cause extended toxicity. Furthermore, hydrolytic enzymes such as lysozyme and chitinase did not degrade chitosan nanoparticles. Moreover, QDs-embedded CNPs show enhanced internalization in NIH3T3 cells as compared to bare QDs. This method offers ease of synthesis and handling of stable, luminescent, biocompatible CdTe QDs-embedded CNPs with a favorable toxicity profile and better cellular uptake with potential for bioimaging and targeted detection of cellular components.

  14. Novel aspects of application of cadmium telluride quantum dots nanostructures in radiation oncology

    NASA Astrophysics Data System (ADS)

    Fazaeli, Yousef; Zare, Hakimeh; Karimi, Shokufeh; Rahighi, Reza; Feizi, Shahzad

    2017-08-01

    In the last two decades, quantum dots nanomaterials have garnered a great deal of scientific interest because of their unique properties. Quantum dots (QDs) are inorganic fluorescent nanocrystals in the size range between 1 and 20 nm. Due to their structural properties, they possess distinctive properties and behave in different way from crystals in macro scale, in many branches of human life. Cadmium telluride quantum dots (CdTe QDs) were labeled with 68Ga radio nuclide for fast in vivo targeting and coincidence imaging of tumors. Using instant paper chromatography, the physicochemical properties of the Cadmium telluride quantum dots labeled with 68Ga NPs (68Ga@ CdTe QDs) were found high enough stable in organic phases, e.g., a human serum, to be reliably used in bioapplications. In vivo biodistribution of the 68Ga@ CdTe QDs nanoconposite was investigated in rats bearing fibro sarcoma tumor after various post-injection periods of time. The 68Ga NPs exhibited a rapid as well as high tumor uptake in a very short period of time (less than 10 min), resulting in an efficient tumor targeting/imaging agent. Meantime, the low lipophilicity of the 68Ga NPs caused to their fast excretion throughout the body by kidneys (as also confirmed by the urinary tract). Because of the short half-life of 68Ga radionuclide, the 68Ga@ CdTe QDs with an excellent tumor targeting/imaging and fast washing out from the body can be suggested as one of the most effective and promising nanomaterials in nanotechnology-based cancer diagnosis and therapy.

  15. Pyrolyzed thin film carbon

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  16. Influence of Zn2+ doping on the crystal structure and optical-electrical properties of CdTe thin films

    NASA Astrophysics Data System (ADS)

    Kavitha, R.; Sakthivel, K.

    2015-10-01

    The present study reports the synthesis of Cd1-xZnxTe (x = 0, 0.025, 0.050, 0.075 and 0.100) nanocrystalline thin film through a simple two step method. In the first step fine nanoparticles of Cd1-xZnxTe was prepared by solvothermal microwave irradiation (SMI) technique and then deposited as thin film using dip-coating technique. X-ray diffraction study showed that films are polycrystalline with cubic phase, which are preferentially oriented along the (1 1 1) direction. No impurity phase was observed in the XRD pattern even after higher concentration of doping (x = 0.100) of Zn. FESEM study revealed that the films are homogeneous without cracks and pinholes. TEM micrographs revealed the particles are slightly agglomerated and lesser than 25 nm. The optical absorption study revealed that pure and doped CdTe films possess a direct band gap material with bandgap values between 2.39 and 2.63 eV (±0.02 eV). The values of optical bandgap increase with an increase in dopant (Zn) concentration from x = 0.025 to 0.10. The pure cadmium telluride (CdTe) nanocrystalline film shows a strong green emission peak centered at about 525 nm. The emission peaks of Cd1-xZnxTe nanocrystalline films are red shifted from 525 nm to 611 nm according to the dopant (Zn2+) concentration. The grains in the prepared films are uniformly distributed, which was confirmed by narrow full width at half maximum (FWHM) of the emission peaks (40-65 nm). The DC conductivity has increased by 1.25 and 4 orders as the concentration of dopant increases from x = 0.025 to 0.10 at room temperature (30 °C) and 150 °C respectively. The higher conductivity value is underpinned by the smaller activation energy value and is explained by thermionic emission mechanism.

  17. Chemical vapor deposition of thin-film polycrystalline Si for low-cost solar cells. Second quarterly technical progress report for period November 3, 1979 through February 1, 1980

    SciTech Connect

    Ruth, R.P.; Simpson, W.I.; Yang, J.J.J.; Moudy, L.A.; Johnson, R.E.

    1980-02-01

    A research program is in progress for the development of thin-film polycrystalline Si solar cells on low-cost substrate material. The results of the second quarter of work are described. The main emphasis has been on investigation of the transport properties of p-type polycrystalline Si films (formed by SiH/sub 4/ pyrolysis in H/sub 2/) as functions of grain size and acceptor doping concentration. The study has involved preparation of sets of polycrystalline films grown simultaneously on polycrystalline high-purity alumina substrates in a range of average grain sizes (approx. 1 ..mu..m to approx. 125 ..mu..m) and with a range of impurity doping concentrations from approx. 10/sup 15/ to >10/sup 20/ cm/sup -3/, primarily at approx. 985/sup 0/C. The doping concentrations are deduced from measurements of free carrier concentrations in simultaneously grown and identically doped single-crystal films on single-crystal alumina (i.e., sapphire) substrates. In addition to room-temperature measurements of resistivity and carrier concentration (and thus Hall mobility) made routinely on all of the films, selected sets of films have been characterized in detail by measurements as a function of sample temperature in the range 77 to 420/sup 0/K. The results to date confirm many of the features of the grain-boundary trapping model for conduction in polycrystalline Si, including the existence of a mobility minimum for an impurity doping concentration the magnitude of which varies with the average grain size in the film, the existence of barriers in the grain boundaries with heights that also are a function of doping concentration, and a strong dependence of free carrier concentration on the impurity doping concentration for values below that for which the mobility is a minimum. There are some pronounced differences in detail between the experimental results and the model, however, including that for the apparent area density of traps in the grain boundaries.

  18. High Mobility Exceeding 80 cm2 V-1 s-1 in Polycrystalline Ta-Doped SnO2 Thin Films on Glass Using Anatase TiO2 Seed Layers

    NASA Astrophysics Data System (ADS)

    Nakao, Shoichiro; Yamada, Naoomi; Hitosugi, Taro; Hirose, Yasushi; Shimada, Toshihiro; Hasegawa, Tetsuya

    2010-03-01

    High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than two times increase in mobility, compared to films grown directly on the glass substrates. The highest mobility obtained was 83 cm2 V-1 s-1 with a resistivity of 2.8×10-4 Ω cm, whereas the film with the lowest resistivity of 1.8×10-4 Ω cm had a mobility of 60 cm2 V-1 s-1.

  19. Infrared microspectroscopic imaging of biomineralized tissues using a mercury-cadmium-telluride focal-plane array detector.

    PubMed

    Marcott, C; Reeder, R C; Paschalis, E P; Tatakis, D N; Boskey, A L; Mendelsohn, R

    1998-02-01

    A 64 x 64 mercury-cadmium-telluride focal-plane array detector attached to a Fourier transform infrared microscope was used to spectroscopically image 5 microm sections of canine alveolar bone tissue in the fingerprint region of the infrared spectrum. By ratioing the relative intensities of specific bands across the images, it is possible to obtain spatial distributions of the mineral-to-matrix ratio and mineral maturity as a function of distance from an osteon.

  20. The effect of different annealing temperatures on tin and cadmium telluride phases obtained by a modified chemical route

    SciTech Connect

    Mesquita, Anderson Fuzer; Porto, Arilza de Oliveira; Magela de Lima, Geraldo; Paniago, Roberto; Ardisson, José Domingos

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ► Synthesis of cadmium and tin telluride. ► Chemical route to obtain pure crystalline cadmium and tin telluride. ► Effect of the annealing temperature on the crystalline phases. ► Removal of tin oxide as side product through thermal treatment. -- Abstract: In this work tin and cadmium telluride were prepared by a modification of a chemical route reported in the literature to obtain metallacycles formed by oxidative addition of tin-tellurium bonds to platinum (II). Through this procedure it was possible to obtain tin and cadmium telluride. X-ray diffraction and X-ray photoelectron spectroscopy were used to identify the crystalline phases obtained as well as the presence of side products. In the case of tin telluride it was identified potassium chloride, metallic tellurium and tin oxide as contaminants. The tin oxidation states were also monitored by {sup 119}Sn Mössbauer spectroscopy. The annealing in hydrogen atmosphere was chosen as a strategy to reduce the tin oxide and promote its reaction with the excess of tellurium present in the medium. The evolution of this tin oxide phase was studied through the annealing of the sample at different temperatures. Cadmium telluride was obtained with high degree of purity (98.5% relative weight fraction) according to the Rietveld refinement of X-ray diffraction data. The modified procedure showed to be very effective to obtain amorphous tin and cadmium telluride and the annealing at 450 °C has proven to be useful to reduce the amount of oxide produced as side product.

  1. Photoluminescence and extended X-ray absorption fine structure studies on cadmium telluride material

    NASA Astrophysics Data System (ADS)

    Liu, Xiangxin

    The direct-band-gap semiconductor CdTe is an important material for fabricating high efficiency, polycrystalline thin-film solar cells in a heterojunction configuration. The outstanding physical properties of this material such as its good band-gap match to the solar spectrum, ease of fabrication of stoichiometric films, and easy grain boundary passivation make it an important candidate for large area, thin-film solar cells. However, there are several poorly understood processing steps that are commonly utilized in cell fabrication. One of these is a CdCl2 treatment near 400°C in the presence of oxygen, which can improve the cell efficiency a factor of two or more. Another factor is the role of copper in cell performance. In high performance CdS/CdTe thin-film solar cells, copper is usually included in the fabrication of low-resistance back contacts to obtain heavy p-type doping of the absorber CdTe at the contact. However, most of the copper is not electrically active. For example, secondary ion mass spectroscopy (SIMS) on typical CdTe cells has shown Cu concentrations of 1019 atoms/cm3 and even higher, although capacitance-voltage (C-V) measurements indicate typical ionized acceptor levels on the order of 1014/cm 3. Thus, there is great interest in the location and role of this inactive copper in CdTe photovoltaic (PV) devices. In this thesis, I will describe results obtained on magnetron-sputtered CdTe films that were diffused with copper following the procedure used for creating a cell back contact. Extended X-ray Absorption Fine Structure (EXAFS) measurements identified the chemical environment of the majority of the copper and show major differences depending on whether the CdTe film has been treated with chloride prior to the Cu diffusion. The EXAFS data indicate that the Cu chemistry is strongly affected by the chloride treatments---predominantly Cu2Te when Cu was diffused into the as-deposited CdTe film, but a Cu2O environment when Cu was diffused after

  2. Impact of thermal annealing on optical properties of vacuum evaporated CdTe thin films for solar cells

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Purohit, A.; Lal, C.; Nehra, S. P.; Dhaka, M. S.

    2016-05-01

    In this paper, the impact of thermal annealing on optical properties of cadmium telluride (CdTe) thin films is investigated. The films of thickness 650 nm were deposited on thoroughly cleaned glass substrate employing vacuum evaporation followed by thermal annealing in the temperature range 250-450 °C. The as-deposited and annealed films were characterized using UV-Vis spectrophotometer. The optical band gap is found to be decreased from 1.88 eV to 1.48 eV with thermal annealing. The refractive index is found to be in the range 2.73-2.92 and observed to increase with annealing treatment. The experimental results reveal that the thermal annealing plays an important role to enhance the optical properties of CdTe thin films and annealed films may be used as absorber layer in CdTe/CdS solar cells.

  3. Experimental evidence of enhanced optical absorption in ultra-thin film CdTe PV absorbers via embedded metal nanopatterns

    NASA Astrophysics Data System (ADS)

    Rose, Aaron H.; Solomon, Michelle L.; Burns, Michael J.; Naughton, Michael J.

    2015-03-01

    We show an increase of optical absorbance in ultra-thin film cadmium telluride solar absorbers by embedded metal nanopatterns (EMN) in the absorber material. Our experimental results are supported by FEM simulations, which also indicate minimal energy loss in the metal. As opposed to locating the metal nanostructures outside of the active region, e.g. at the back or top contact of a solar cell, embedding the structures within the active region gives the greatest absorbance enhancement. Previous work has shown a similar increase in absorbance for an amorphous silicon solar medium, suggesting that EMN is a general light management scheme that can be applied to any thin film photoabsorber. Such light trapping may further yield a viable route to ultra-thin hot electron solar cells.

  4. Impact of thermal annealing on optical properties of vacuum evaporated CdTe thin films for solar cells

    SciTech Connect

    Chander, Subhash Purohit, A.; Lal, C.; Nehra, S. P.; Dhaka, M. S.

    2016-05-06

    In this paper, the impact of thermal annealing on optical properties of cadmium telluride (CdTe) thin films is investigated. The films of thickness 650 nm were deposited on thoroughly cleaned glass substrate employing vacuum evaporation followed by thermal annealing in the temperature range 250-450 °C. The as-deposited and annealed films were characterized using UV-Vis spectrophotometer. The optical band gap is found to be decreased from 1.88 eV to 1.48 eV with thermal annealing. The refractive index is found to be in the range 2.73-2.92 and observed to increase with annealing treatment. The experimental results reveal that the thermal annealing plays an important role to enhance the optical properties of CdTe thin films and annealed films may be used as absorber layer in CdTe/CdS solar cells.

  5. High-throughput manufacturing of thin-film CdS/CdTe photovoltaic modules. Annual subcontract report, 16 September 1996--15 January 1998

    SciTech Connect

    Sandwisch, D.W.

    1998-08-01

    Cadmium telluride (CdTe) is recognized as one of the leading materials for low-cost photovoltaic modules. Solar Cells, Inc., has developed this technology and is scaling its pilot production capabilities to a multi-megawatt level. The Photovoltaic Manufacturing Technology (PVMaT) subcontract supports these efforts. Activities during the third phase of the program concentrated on process development, equipment design and testing, quality assurance, ES and H programs, and large-scale next-generation coating-system prototype development. These efforts broadly addressed the issues of the manufacturing process for producing thin-film, monolithic CdS/CdTe photovoltaic modules.

  6. a Photoemission Study of the Electronic Structure and Oxidation Properties of Mercury-Cadmium Telluride.

    NASA Astrophysics Data System (ADS)

    Silberman, Joel Abraham

    The study of electronic structure and oxidation properties of the random substitutional alloy Mercury Cadmium Telluride is of general interest in relating the electronic structure and surface properties of a semiconductor alloy with a strongly aperiodic potential to these aspects of the binary compounds that represent the composition extremes. It is also of practical value, as study of the electronic structure and oxidation properties provides an underpinning of fundamental knowledge for further technological development. Angle-integrated and polarization dependent angle -resolved photoemission spectroscopy (along the normal) from the (110) cleavage face of the alloy and the binaries Cadmium Telluride and Mercury Telluride were performed to examine the composition dependence of the electronic structure and bonding. Emission from the valence states documents the breakdown of the virtual crystal approximation and the success of the coherent potential approximation in treating the alloy potential. The consequences of this finding for the bonding and materials properties are described. Detailed dispersion relations as a function of composition have been deduced from the angle-resolved data for a portion of the band structure along (110) and are compared to theory. To augment the discussion of the photoemission final states and the polarization dependence of the data, a nonlocal pseudopotential calculation extending to 30 eV above the valence band maximum was executed. In the oxidation studies, core level photoemission spectroscopy was used to characterize the clean surface and monitor the growth of native oxide films a few monolayers thick formed on the semi- conductor at room temperature by exposure to oxygen in the gas phase activated by contact with a hot filament. The cleaved (110) surface of p-type solid state recrystallized alloy samples was found to be stoichiometric, stable against Hg loss over time in vacuum at room temperature, but converted to n

  7. Research on polycrystalline thin-film CuInGaSe{sub 2} solar cells. Annual subcontract report, 3 May 1991--21 May 1993

    SciTech Connect

    Chen, W.S.; Stewart, J.M.; Mickelsen, R.A.; Devaney, W.E.; Stanbery, B.J.

    1993-10-01

    This report describes work to fabricate high-efficiency CdZnS/CuInGaSe{sub 2}, thin-film solar cells and to develop improved transparent conductor window layers such as ZnO. The specific technical milestone for Phase I was to demonstrate an air mass (AM) 1.5 global 13% , 1-cm{sup 2} total-area CuInGaSe{sub 2} (CIGS) thin-film solar cell. For Phase II, the objective was to demonstrate an AM1.5 global 13.5%, 1-cm{sup 2} total-area efficiency. We focused our activities on three areas. First, we modified the CIGS deposition system to double its substrate capacity. Second, we developed new tooling to enable investigation of a modified aqueous CdZnS process in which the goal was to improve the yield of this critical step in the device fabrication process. Third, we upgraded the ZnO sputtering system to improve its reliability and reproducibility. A dual rotatable cathode metallic source was installed, and the sputtering parameters were further optimized to improve ZnO`s properties as a transparent conducting oxide (TCO). Combining the refined CdZnS process with CIGS from the newly fixtured deposition system enable us to fabricate and deliver a ZnO/Cd{sub 0.08}Zn{sub 0.20}S/CuIn{sub 0.74}Ga{sub 0.26}Se{sub 2} cell on alumina with I-V characteristics, as measured by NREL under standard test conditions, of 13.7% efficiency with V{proportional_to} = 0.5458 V, J{sub sc} = 35.48 mA/cm{sup 2}, FF = 0.688, and efficiency = 14.6%.

  8. Research on polycrystalline thin-film CuGaInSe{sub 2} solar cells. Annual subcontract report, 3 May 1991--2 May 1992

    SciTech Connect

    Stanbery, B.J.; Chen, W.S.; Devaney, W.E.; Stewart, J.W.

    1992-11-01

    This report describes research to fabricate high-efficiency CdZnS/CuInGaSe{sub 2} (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13% efficient, 1-cm{sup 2}-total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition: system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO//Cd{sub 0.82}Zn{sub 0.18}S/CuIn{sub 0.80}Ga{sub 0.20}Se{sub 2} cell that was verified at NREL under standard testing conditions at 13.1% efficiency with V{sub oc} = 0.581 V, J{sub sc} = 34.8 mA/cm{sup 2}, FF = 0.728, and a cell area of 0.979 cm{sup 2}.

  9. Spectroscopic Ellipsometry Studies of Ag and ZnO Thin Films and Their Interfaces for Thin Film Photovoltaics

    NASA Astrophysics Data System (ADS)

    Sainju, Deepak

    Many modern optical and electronic devices, including photovoltaic devices, consist of multilayered thin film structures. Spectroscopic ellipsometry (SE) is a critically important characterization technique for such multilayers. SE can be applied to measure key parameters related to the structural, optical, and electrical properties of the components of multilayers with high accuracy and precision. One of the key advantages of this non-destructive technique is its capability of monitoring the growth dynamics of thin films in-situ and in real time with monolayer level precision. In this dissertation, the techniques of SE have been applied to study the component layer materials and structures used as back-reflectors and as the transparent contact layers in thin film photovoltaic technologies, including hydrogenated silicon (Si:H), copper indium-gallium diselenide (CIGS), and cadmium telluride (CdTe). The component layer materials, including silver and both intrinsic and doped zinc oxide, are fabricated on crystalline silicon and glass substrates using magnetron sputtering techniques. These thin films are measured in-situ and in real time as well as ex-situ by spectroscopic ellipsometry in order to extract parameters related to the structural properties, such as bulk layer thickness and surface roughness layer thickness and their time evolution, the latter information specific to real time measurements. The index of refraction and extinction coefficient or complex dielectric function of a single unknown layer can also be obtained from the measurement versus photon energy. Applying analytical expressions for these optical properties versus photon energy, parameters that describe electronic transport, such as electrical resistivity and electron scattering time, can be extracted. The SE technique is also performed as the sample is heated in order to derive the effects of annealing on the optical properties and derived electrical transport parameters, as well as the

  10. Patterning polycrystalline thin films by defocused ion beam: The influence of initial morphology on the evolution of self-organized nanostructures

    SciTech Connect

    Toma, A.; Chiappe, D.; Boragno, C.; Buatier de Mongeot, F.; Batic, B. Setina; Godec, M.; Jenko, M.; Valbusa, U.

    2008-11-15

    We report on self-organized patterning of polycrystalline noble metal films, supported on dielectric substrates, by defocused Ar{sup +} ion beam irradiation. The initial surface morphology affects the formation of nanostructures, forcing the growth of ripples with a lateral periodicity imposed by the pristine polycrystalline grain distribution. At the early stages, the self-organization process is dominated by the shadowing of taller grains, while a crossover to the conventional erosive regime, observed for single crystals, sets in at longer sputtering times. The grain boundaries, although providing an additional bias for diffusion of mobile defects, do not affect the propagation of nanoscale ripples across individual grains.

  11. Reproductive toxicity and gender differences induced by cadmium telluride quantum dots in an invertebrate model organism

    PubMed Central

    Yan, Si-Qi; Xing, Rui; Zhou, Yan-Feng; Li, Kai-Le; Su, Yuan-Yuan; Qiu, Jian-Feng; Zhang, Yun-Hu; Zhang, Ke-Qin; He, Yao; Lu, Xiao-Ping; Xu, Shi-Qing

    2016-01-01

    Sexual glands are key sites affected by nanotoxicity, but there is no sensitive assay for measuring reproductive toxicity in animals. The aim of this study was to investigate the toxic effects of cadmium telluride quantum dots (CdTe-QDs) on gonads in a model organism, Bombyx mori. After dorsal vein injection of 0.32 nmol of CdTe-QDs per individual, the QDs passed through the outer membranes of gonads via the generation of ROS in the membranes of spermatocysts and ovarioles, as well as internal germ cells, thereby inducing early germ cell death or malformations via complex mechanisms related to apoptosis and autophagy through mitochondrial and lysosomal pathways. Histological observations of the gonads and quantitative analyses of germ cell development showed that the reproductive toxicity was characterized by obvious male sensitivity. Exposure to QDs in the early stage of males had severe adverse effects on the quantity and quality of sperm, which was the main reason for the occurrence of unfertilized eggs. Ala- or Gly-conjugated QDs could reduce the nanotoxicity of CdTe-QDs during germ cell development and fertilization of their offspring. The results demonstrate that males are preferable models for evaluating the reproductive toxicity of QDs in combined in vivo/in vitro investigations. PMID:27669995

  12. Reproductive toxicity and gender differences induced by cadmium telluride quantum dots in an invertebrate model organism

    NASA Astrophysics Data System (ADS)

    Yan, Si-Qi; Xing, Rui; Zhou, Yan-Feng; Li, Kai-Le; Su, Yuan-Yuan; Qiu, Jian-Feng; Zhang, Yun-Hu; Zhang, Ke-Qin; He, Yao; Lu, Xiao-Ping; Xu, Shi-Qing

    2016-09-01

    Sexual glands are key sites affected by nanotoxicity, but there is no sensitive assay for measuring reproductive toxicity in animals. The aim of this study was to investigate the toxic effects of cadmium telluride quantum dots (CdTe-QDs) on gonads in a model organism, Bombyx mori. After dorsal vein injection of 0.32 nmol of CdTe-QDs per individual, the QDs passed through the outer membranes of gonads via the generation of ROS in the membranes of spermatocysts and ovarioles, as well as internal germ cells, thereby inducing early germ cell death or malformations via complex mechanisms related to apoptosis and autophagy through mitochondrial and lysosomal pathways. Histological observations of the gonads and quantitative analyses of germ cell development showed that the reproductive toxicity was characterized by obvious male sensitivity. Exposure to QDs in the early stage of males had severe adverse effects on the quantity and quality of sperm, which was the main reason for the occurrence of unfertilized eggs. Ala- or Gly-conjugated QDs could reduce the nanotoxicity of CdTe-QDs during germ cell development and fertilization of their offspring. The results demonstrate that males are preferable models for evaluating the reproductive toxicity of QDs in combined in vivo/in vitro investigations.

  13. Directional Solidification of Mercury Cadmium Telluride During the Second United States Microgravity Payload Mission (USMP-2)

    NASA Technical Reports Server (NTRS)

    Gillies, D. C.; Lehoczky, S. L.; Szofran, F. R.; Watring, D. A.; Alexander, H. A.; Jerman, G. A.

    1996-01-01

    As a solid solution semiconductor having, a large separation between liquidus and solidus, mercury cadmium telluride (MCT) presents a formidable challenge to crystal growers desiring an alloy of high compositional uniformity. To avoid constitutional supercooling during Bridgman crystal growth it is necessary to solidify slowly in a high temperature gradient region. The necessary translation rate of less than 1 mm/hr results in a situation where fluid flow induced by gravity on earth is a significant factor in material transport. The Advanced Automated Directional Solidification Furnace (AADSF) is equipped to provide the stable thermal environment with a high gradient, and the required slow translation rate needed. Ground based experiments in AADSF show clearly the dominance of flow driven transport. The first flight of AADSF in low gravity on USMP-2 provided an opportunity to test theories of fluid flow in MCT and showed several solidification regimes which are very different from those observed on earth. Residual acceleration vectors in the orbiter during the mission were measured by the Orbital Acceleration Research Experiment (OARE), and correlated well with observed compositional differences in the samples.

  14. Spectral x-ray computed tomography scanner using a cadmium telluride detector

    NASA Astrophysics Data System (ADS)

    Sato, Eiichi; Oda, Yasuyuki; Yamaguchi, Satoshi; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Watanabe, Manabu; Kusachi, Shinya

    2016-10-01

    To obtain four tomograms with four different photon energy ranges simultaneously, we have developed a quad-energy Xray photon counter with a cadmium telluride (CdTe) detector and four sets of comparators and frequency-voltage converters (FVCs). X-ray photons are detected using the CdTe detector, and the event pulses from a shaping amplifier are sent to four comparators simultaneously to regulate four threshold energies of 20, 35, 50 and 65 keV. Using this counter, the energy ranges are 20-100, 35-100, 50-100 and 65-100 keV; the maximum energy corresponds to the tube voltage. Xray photons in the four ranges are counted using the comparators, and the logical pulses from the comparators are input to the FVCs. The outputs from the four FVCs are input to a personal computer through an analog-digital converter (ADC) to carry out quad-energy imaging. To observe contrast variations with changes in the threshold energy, we performed spectral computed tomography utilizing the quad-energy photon counter at a tube voltage of 100 kV and a current of 8.0 μA. In the spectral CT, four tomograms were obtained simultaneously with four energy ranges. The image contrast varied with changes in the threshold energy, and the exposure time for tomography was 9.8 min.

  15. Use of Rutherford backscattering and optical spectroscopy to study boron implantation in cadmium telluride. Technical report

    SciTech Connect

    Jamieson, D.N.; Bowman, R.C.; Adams, P.M.; Knudsen, J.F.; Downing, R.G.

    1988-10-03

    The effect of large-dose boron implantation in single-crystal cadmium telluride (CdTe) was investigated by Rutherford backscattering spectrometry (RBS), with channeling double-crystal x-ray diffraction (DCD), and photoreflectance (PR) spectroscopy. Comparisons are made with the results of identical B implantations of silicon and gallium arsenides crystals. Multiple energy implantations were performed at room temperature and liquid nitrogen temperature with total doses up to 1.5 x 10 W B ions/sq. cm. The implanted B distribution was measured with neutron depth profiling (NDP) and found to agree well with Monte Carlo ion-range calculations. The RBS results showed that the CdTe crystals had not been rendered completely amorphous even for the highest-dose implantation unlike GaAs and Si. Furthermore, the DCD results showed little implantation-induced structure in the rocking curves from the implanted CdTe crystals, in contrast to GaAs. The consequences of annealing at 500 C in an attempt to regrow the crystal structure are also discussed.

  16. Temperature dependent van der Pauw-Hall measurements on sodium doped single crystalline cadmium telluride

    NASA Astrophysics Data System (ADS)

    Ahmad, Faisal R.

    2015-03-01

    In this report, results of the temperature dependent electrical conductivity measurements conducted on single crystalline cadmium telluride (CdTe), containing sodium (Na) impurities are presented and discussed. The electrical conductivity measurements were conducted using an apparatus that allowed the implementation of a standard van der Pauw-Hall effect technique through which the electrical resistivity, concentration of majority carriers, as well as the carrier mobility were determined for temperatures ranging between 24 K and 350 K. Over this temperature range, the electrical resistivity was observed to change by 7 orders of magnitude. Hall measurements showed that the hole concentration at 300 K was ˜3 × 1015 cm-3 and the hole mobility at the same temperature was ˜80 cm2/V s. Measuring the concentration of holes as a function of the sample temperature enabled the estimation of the acceptor energy level with respect to the valence band maximum to be ˜60 meV. The same data also revealed the potential presence of a compensating donor level. Furthermore, the hole mobility was also analyzed over the entire temperature range and the data revealed that above 100 K, the carrier mobility was dominated by the scattering of holes from lattice vibrations.

  17. Improved performance of silicon nanowire/cadmium telluride quantum dots/organic hybrid solar cells

    NASA Astrophysics Data System (ADS)

    Ge, Zhaoyun; Xu, Ling; Zhang, Renqi; Xue, Zhaoguo; Wang, Hongyu; Xu, Jun; Yu, Yao; Su, Weining; Ma, Zhongyuan; Chen, Kunji

    2015-04-01

    We fabricated silicon nanowire/cadmium telluride quantum dots (CdTe QDs)/organic hybrid solar cells and investigated their structure and electrical properties. Transmission electron microscope revealed that CdTe QDs were uniformly distributed on the surface of the silicon nanowires, which made PEDOT:PSS easily filled the space between SiNWs. The current density-voltage (J-V) characteristics of hybrid solar cells were investigated both in dark and under illumination. The result shows that the performance of the hybrid solar cells with CdTe QDs layer has an obvious improvement. The optimal short-circuit current density (Jsc) of solar cells with CdTe QDs layer can reach 33.5 mA/cm2. Compared with the solar cells without CdTe QDs, Jsc has an increase of 15.1%. Power conversion efficiency of solar cells also increases by 28.8%. The enhanced performance of the hybrid solar cells with CdTe QDs layers are ascribed to down-shifting effect of CdTe QDs and the modification of the silicon nanowires surface with CdTe QDs. The result of our experiments suggests that hybrid solar cells with CdTe QDs modified are promising candidates for solar cell application.

  18. Inhibition of autophagy contributes to the toxicity of cadmium telluride quantum dots in Saccharomyces cerevisiae

    PubMed Central

    Fan, Junpeng; Shao, Ming; Lai, Lu; Liu, Yi; Xie, Zhixiong

    2016-01-01

    Cadmium telluride quantum dots (CdTe QDs) are used as near-infrared probes in biologic and medical applications, but their cytological effects and mechanism of potential toxicity are still unclear. In this study, we evaluated the toxicity of CdTe QDs of different sizes and investigated their mechanism of toxicity in the yeast Saccharomyces cerevisiae. A growth inhibition assay revealed that orange-emitting CdTe (O-CdTe) QDs (half inhibitory concentration [IC50] =59.44±12.02 nmol/L) were more toxic than green-emitting CdTe QDs (IC50 =186.61±19.74 nmol/L) to S. cerevisiae. Further studies on toxicity mechanisms using a transmission electron microscope and green fluorescent protein tagged Atg8 processing assay revealed that O-CdTe QDs could partially inhibit autophagy at a late stage, which differs from the results reported in mammalian cells. Moreover, autophagy inhibited at a late stage by O-CdTe QDs could be partially recovered by enhancing autophagy with rapamycin (an autophagy activator), combined with an increased number of living cells. These results indicate that inhibition of autophagy acts as a toxicity mechanism of CdTe QDs in S. cerevisiae. This work reports a novel toxicity mechanism of CdTe QDs in yeast and provides valuable information on the effect of CdTe QDs on the processes of living cells. PMID:27524895

  19. LEACHING OF CADMIUM, TELLURIUM AND COPPER FROM CADMIUM TELLURIDE PHOTOVOLTAIC MODULES.

    SciTech Connect

    FTHENAKIS,V.

    2004-02-03

    Separating the metals from the glass is the first step in recycling end-of-life cadmium telluride photovoltaic modules and manufacturing scrap. We accomplished this by leaching the metals in solutions of various concentrations of acids and hydrogen peroxide. A relatively dilute solution of sulfuric acid and hydrogen peroxide was found to be most effective for leaching cadmium and tellurium from broken pieces of CdTe PV modules. A solution comprising 5 mL of hydrogen peroxide per kg of PV scrap in 1 M sulfuric acid, gave better results than the 12 mL H{sub 2}O{sub 2}/kg, 3.2 M H{sub 2}SO{sub 4} solution currently used in the industry. Our study also showed that this dilute solution is more effective than hydrochloric-acid solutions and it can be reused after adding a small amount of hydrogen peroxide. These findings, when implemented in large-scale operation, would result in significant savings due to reductions in volume of the concentrated leaching agents (H{sub 2}SO{sub 4} and H{sub 2}O{sub 2}) and of the alkaline reagents required to neutralize the residuals of leaching.

  20. Cadmium telluride photovoltaic manufacturing technology. Annual subcontract report, 7 January 1994--6 January 1995

    SciTech Connect

    Weisiger, D.; Albright, S.P.; Brines, J.; Thompson, R.

    1995-11-01

    This report describes work performed by Golden Photon, Inc. (GPI), to conduct research under the PVMaT program, Phase 2B. The objective of the research is to advance GPI`s manufacturing technology, reduce module production costs, increase average module performance, and identify ways to expand production capacity. More specifically, the tasks established for Phase I were to design and install leasehold improvements for the 2-MW production line; to improve and develop product design, efficiency, and marketability; to ensure uninterrupted qualified supplies and raw materials for production; to address environmental, health, and safety issues encountered during production of photovoltaic modules; and to reduce the cost of manufacturing modules. During the first half of this reporting period, the development, design, and debugging of cell interconnection equipment critical to start-up was completed. During the second and third quarters, the primary focus was on the substrate deposition steps (tin oxide, cadmium sulfide, and cadmium telluride) and cell interconnection steps (division). In general, process development, engineering, and quality teams continued to focus on identifying, baselining, and improving (through redesign) actual process equipment operation parameters to meet the required PV panel specifications and improve process throughput rates and yields.

  1. Energy-discriminating X-ray computed tomography system utilizing a cadmium telluride detector

    NASA Astrophysics Data System (ADS)

    Sato, Eiichi; Abderyim, Purkhet; Enomoto, Toshiyuki; Watanabe, Manabu; Hitomi, Keitaro; Takahasi, Kiyomi; Sato, Shigehiro; Ogawae, Akira; Onagawa, Jun

    2010-07-01

    An energy-discriminating K-edge X-ray computed tomography (CT) system is useful for increasing contrast resolution of a target region utilizing contrast media and for reducing the absorbed dose for patients. The CT system is of the first-generation type with a cadmium telluride (CdTe) detector, and a projection curve is obtained by translation scanning using the CdTe detector in conjunction with an x-stage. An object is rotated by the rotation step angle using a turntable between the translation scans. Thus, CT is carried out by repeating the translation scanning and the rotation of an object. Penetrating X-ray photons from the object are detected by the CdTe detector, and event signals of X-ray photons are produced using charge-sensitive and shaping amplifiers. Both the photon energy and the energy width are selected by use of a multi-channel analyzer, and the number of photons is counted by a counter card. Demonstration of enhanced iodine K-edge X-ray CT was carried out by selecting photons with energies just beyond the iodine K-edge energy of 33.2 keV.

  2. Advanced methods for preparation and characterization of infrared detector materials. [mercury cadmium tellurides

    NASA Technical Reports Server (NTRS)

    Lehoczky, S. L.; Szofran, F. R.; Martin, B. G.

    1980-01-01

    Mercury cadmium telluride crystals were prepared by the Bridgman method with a wide range of crystal growth rates and temperature gradients adequate to prevent constitutional supercooling under diffusion-limited, steady state, growth conditions. The longitudinal compositional gradients for different growth conditions and alloy compositions were calculated and compared with experimental data to develop a quantitative model of the crystal growth kinetics for the Hg(i-x)CdxTe alloys, and measurements were performed to ascertain the effect of growth conditions on radial compositional gradients. The pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential thermal analysis measurements and used to calculate the segregation coefficient of Cd as a function of x and interface temperature. Computer algorithms specific to Hg(1-x)CdxTe were developed for calculations of the charge carrier concentrations, charge carrier mobilities, Hall coefficient, optical absorptance, and Fermi energy as functions of x, temperature, ionized donor and acceptor concentrations, and neutral defect concentrations.

  3. Two-color detector: Mercury-cadmium-telluride as a terahertz and infrared detector

    SciTech Connect

    Sizov, F.; Zabudsky, V.; Petryakov, V.; Golenkov, A.; Andreyeva, K.; Tsybrii, Z.; Dvoretskii, S.

    2015-02-23

    In this paper, issues associated with the development of infrared (IR) and terahertz (THz) radiation detectors based on HgCdTe are discussed. Two-color un-cooled and cooled to 78 K narrow-gap mercury-cadmium-telluride semiconductor thin layers with antennas were considered both as sub-THz (sub-THz) direct detection bolometers and 3–10 μm IR photoconductors. The noise equivalent power (NEP) for one of the detectors studied at ν ≈ 140 GHz reaches NEP{sub 300 K} ≈ 4.5 × 10{sup −10} W/Hz{sup 1/2} and NEP{sub 78 K} ≈ 5 × 10{sup −9} W/Hz{sup 1/2}. The same detector used as an IR photoconductor showed the responsivity at temperatures T = 78 K and 300 K with signal-to-noise ratio S/N ≈ 750 and 50, respectively, under illumination by using IR monochromator and globar as a thermal source.

  4. Cadmium telluride quantum dot nanoparticle cytotoxicity and effects on model immune responses to Pseudomonas aeruginosa

    PubMed Central

    Nguyen, Kathy C; Seligy, Vern L

    2013-01-01

    This study examines dose effects of cadmium telluride quantum dots (CdTe-QDs) from two commercial sources on model macrophages (J774A.1) and colonic epithelial cells (HT29). Effects on cellular immune signalling responses were measured following sequential exposure to QDs and Pseudomonas aeruginosa strain PA01. At CdTe-QD concentrations between 10-2 and 10 µg/ml, cells exhibited changes in metabolism and morphology. Confocal imaging revealed QD internalisation and changes in cell–cell contacts, shapes and internal organisations. QD doses below 10-2 µg/ml caused no observed effects. When QD exposures at 10-7 to 10-3 µg/ml preceded PA01 (107 bacteria/ml) challenges, there were elevated cytotoxicity (5–22%, p < 0.05) and reduced levels (two- to fivefold, p < 0.001) of nitric oxide (NO), TNF-α, KC/CXC−1 and IL-8, compared with PA01 exposures alone. These results demonstrate that exposures to sub-toxic levels of CdTe-QDs can depress cell immune-defence functions, which if occurred in vivo would likely interfere with normal neutrophil recruitment for defence against bacteria. PMID:22264036

  5. Temperature dependent van der Pauw-Hall measurements on sodium doped single crystalline cadmium telluride

    SciTech Connect

    Ahmad, Faisal R.

    2015-03-21

    In this report, results of the temperature dependent electrical conductivity measurements conducted on single crystalline cadmium telluride (CdTe), containing sodium (Na) impurities are presented and discussed. The electrical conductivity measurements were conducted using an apparatus that allowed the implementation of a standard van der Pauw-Hall effect technique through which the electrical resistivity, concentration of majority carriers, as well as the carrier mobility were determined for temperatures ranging between 24 K and 350 K. Over this temperature range, the electrical resistivity was observed to change by 7 orders of magnitude. Hall measurements showed that the hole concentration at 300 K was ∼3 × 10{sup 15 }cm{sup –3} and the hole mobility at the same temperature was ∼80 cm{sup 2}/V s. Measuring the concentration of holes as a function of the sample temperature enabled the estimation of the acceptor energy level with respect to the valence band maximum to be ∼60 meV. The same data also revealed the potential presence of a compensating donor level. Furthermore, the hole mobility was also analyzed over the entire temperature range and the data revealed that above 100 K, the carrier mobility was dominated by the scattering of holes from lattice vibrations.

  6. Fate and transport evaluation of potential leaching risks from cadmium telluride photovoltaics.

    PubMed

    Sinha, Parikhit; Balas, Robert; Krueger, Lisa; Wade, Andreas

    2012-07-01

    Fate and transport analysis has been performed to evaluate potential exposures to cadmium (Cd) from cadmium telluride (CdTe) photovoltaics (PV) for rainwater leaching from broken modules in a commercial building scenario. Leaching from broken modules is modeled using the worst-case scenario of total release of Cd, and residential screening levels are used to evaluate potential health impacts to on-site workers and off-site residents. A rooftop installation was considered rather than a ground-mount installation because rainwater runoff is concentrated via building downspouts in a rooftop installation rather than being dispersed across large areas in a ground-mount installation. Fate and transport of Cd from leachate to soil are modeled using equilibrium soil/soil-water partitioning. Subsequent migration to ambient air as windblown dust is evaluated with a screening Gaussian plume dispersion model, and migration to groundwater is evaluated with a dilution-attenuation factor approach. Exposure point concentrations in soil, air, and groundwater are one to six orders of magnitude below conservative (residential soil, residential air, drinking water) human health screening levels in both a California and southern Germany (Baden-Württemberg) exposure scenario. Potential exposures to Cd from rainwater leaching of broken modules in a commercial building scenario are highly unlikely to pose a potential health risk to on-site workers or off-site residents.

  7. Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

    SciTech Connect

    Beck, Patrick R.

    2010-01-07

    Gamma ray detectors are important in national security applications, medicine, and astronomy. Semiconductor materials with high density and atomic number, such as Cadmium Telluride (CdTe), offer a small device footprint, but their performance is limited by noise at room temperature; however, improved device design can decrease detector noise by reducing leakage current. This thesis characterizes and models two unique Schottky devices: one with an argon ion sputter etch before Schottky contact deposition and one without. Analysis of current versus voltage characteristics shows that thermionic emission alone does not describe these devices. This analysis points to reverse bias generation current or leakage through an inhomogeneous barrier. Modeling the devices in reverse bias with thermionic field emission and a leaky Schottky barrier yields good agreement with measurements. Also numerical modeling with a finite-element physics-based simulator suggests that reverse bias current is a combination of thermionic emission and generation. This thesis proposes further experiments to determine the correct model for reverse bias conduction. Understanding conduction mechanisms in these devices will help develop more reproducible contacts, reduce leakage current, and ultimately improve detector performance.

  8. Cadmium telluride nanoparticles loaded on activated carbon as adsorbent for removal of sunset yellow.

    PubMed

    Ghaedi, M; Hekmati Jah, A; Khodadoust, S; Sahraei, R; Daneshfar, A; Mihandoost, A; Purkait, M K

    2012-05-01

    Adsorption is a promising technique for decolorization of effluents of textile dyeing industries but its application is limited due to requirement of high amounts of adsorbent required. The objective of this study was to assess the potential of cadmium telluride nanoparticles loaded onto activated carbon (CdTN-AC) for the removal of sunset yellow (SY) dye from aqueous solution. Adsorption studies were conducted in a batch mode varying solution pH, contact time, initial dye concentration, CdTN-AC dose, and temperature. In order to investigate the efficiency of SY adsorption on CdTN-AC, pseudo-first-order, pseudo-second-order, Elovich, and intra-particle diffusion kinetic models were studied. It was observed that the pseudo-second-order kinetic model fits better than other kinetic models with good correlation coefficient. Equilibrium data were fitted to the Langmuir model. Thermodynamic parameters such as enthalpy, entropy, activation energy, and sticking probability were also calculated. It was found that the sorption of SY onto CdTN-AC was spontaneous and endothermic in nature. The proposed adsorbent is applicable for SY removal from waste of real effluents including pea-shooter, orange drink and jelly banana with efficiency more than 97%.

  9. Properties of Nitrogen-Doped Zinc Telluride Films for Back Contact to Cadmium Telluride Photovoltaics

    NASA Astrophysics Data System (ADS)

    Shimpi, Tushar M.; Drayton, Jennifer; Swanson, Drew E.; Sampath, Walajabad S.

    2017-08-01

    Zinc telluride (ZnTe) films have been deposited onto uncoated glass superstrates by reactive radiofrequency (RF) sputtering with different amounts of nitrogen introduced into the process gas, and the structural and electronic transport properties of the resulting nitrogen-doped ZnTe (ZnTe:N) films characterized. Based on transmission and x-ray diffraction measurements, it was observed that the crystalline quality of the ZnTe:N films decreased with increasing nitrogen in the deposition process. The bulk carrier concentration of the ZnTe:N films determined from Hall-effect measurements showed a slight decrease at 4% nitrogen flow rate. The effect of ZnTe:N films as back contact to cadmium telluride (CdTe) solar cells was also investigated. ZnTe:N films were deposited before or after CdCl2 passivation on CdTe/CdS samples. Small-area devices were characterized for their electronic properties. Glancing-angle x-ray diffraction measurements and energy-dispersive spectroscopy analysis confirmed substantial loss of zinc from the samples where CdCl2 passivation was carried out after ZnTe:N film deposition.

  10. Cadmium telluride nanoparticles loaded on activated carbon as adsorbent for removal of sunset yellow

    NASA Astrophysics Data System (ADS)

    Ghaedi, M.; Hekmati Jah, A.; Khodadoust, S.; Sahraei, R.; Daneshfar, A.; Mihandoost, A.; Purkait, M. K.

    2012-05-01

    Adsorption is a promising technique for decolorization of effluents of textile dyeing industries but its application is limited due to requirement of high amounts of adsorbent required. The objective of this study was to assess the potential of cadmium telluride nanoparticles loaded onto activated carbon (CdTN-AC) for the removal of sunset yellow (SY) dye from aqueous solution. Adsorption studies were conducted in a batch mode varying solution pH, contact time, initial dye concentration, CdTN-AC dose, and temperature. In order to investigate the efficiency of SY adsorption on CdTN-AC, pseudo-first-order, pseudo-second-order, Elovich, and intra-particle diffusion kinetic models were studied. It was observed that the pseudo-second-order kinetic model fits better than other kinetic models with good correlation coefficient. Equilibrium data were fitted to the Langmuir model. Thermodynamic parameters such as enthalpy, entropy, activation energy, and sticking probability were also calculated. It was found that the sorption of SY onto CdTN-AC was spontaneous and endothermic in nature. The proposed adsorbent is applicable for SY removal from waste of real effluents including pea-shooter, orange drink and jelly banana with efficiency more than 97%.

  11. Thin film interference of colloidal thin films.

    PubMed

    Cong, Hailin; Cao, Weixiao

    2004-09-14

    A stairlike colloidal crystal thin film composed of poly(styrene-methyl methacrylate-acrylic acid) (P(St-MMA-AA)) monodispersed colloids was fabricated on an inclined silicon substrate. Different bright colors were observed on the various parts of the film with different layers as white light irradiated perpendicularly on it. The relationship between the colors and layers of the film was investigated and discussed according to the principle of thin film interference. On the basis of the phenomenon of thin film interference, a one-layer colloidal film having uniform color was researched and it would display diverse colors before and after swollen by styrene (St). A circular stairlike colloidal film was achieved to mimic the colors of the peacock tail feather.

  12. Optical thin film devices

    NASA Astrophysics Data System (ADS)

    Mao, Shuzheng

    1991-11-01

    Thin film devices are applied to almost all modern scientific instruments, and these devices, especially optical thin film devices, play an essential role in the performances of the instruments, therefore, they are attracting more and more attention. Now there are numerous kinds of thin film devices and their applications are very diversified. The 300-page book, 'Thin Film Device and Applications,' by Prof. K. L. Chopra gives some general ideas, and my paper also outlines the designs, fabrication, and applications of some optical thin film devices made in my laboratory. Optical thin film devices have been greatly developed in the recent decades. Prof. A. Thelan has given a number of papers on the theory and techniques, Prof. H. A. Macleod's book, 'Thin Film Optical Filters,' has concisely concluded the important concepts of optical thin film devices, and Prof. J. A. Dobrowobski has proposed many successful designs for optical thin film devices. Recently, fully-automatic plants make it easier to produce thin film devices with various spectrum requirements, and some companies, such as Balzers, Leybold AG, Satis Vacuum AG, etc., have manufactured such kinds of coating plants for research or mass-production, and the successful example is the production of multilayer antireflection coatings with high stability and reproducibility. Therefore, it could be said that the design of optical thin film devices and coating plants is quite mature. However, we cannot expect that every problem has been solved, the R&D work still continues, the competition still continues, and new design concepts, new techniques, and new film materials are continually developed. Meanwhile, the high-price of fully-automatic coating plants makes unpopular, and automatic design of coating stacks is only the technique for optimizing the manual design according to the physical concepts and experience, in addition, not only the optical system, but also working environment should be taken into account when

  13. Research on polycrystalline thin-film submodules based on CuInSe{sub 2} materials. Final technical report, 14 December 1995--31 December 1996

    SciTech Connect

    Arya, R; Fogleboch, J; Kessler, J; Russell, L; Skibo, S; Wiedeman, S

    1997-04-01

    This report describes the progress made at Solarex for both device and module efficiencies from the inception of the CIS research program to the present. A rapid improvement in efficiency is apparent, culminating in the fabrication of a 15.5%-efficient device (total area) and a 13%-efficient submodule (aperture area). The device represents the highest efficiency device measured by NREL for any industrial source at that time. The module represented a new world record for any thin-film module at the time of its measurement. The factors leading to these results included improvements in absorber layer quality, transparent contacts, scribing and module formation processes. Other elements critical to the commercialization of CIS-based photovoltaics were also successfully attacked, including reduction of absorber deposition times into the range of 10 to 20 minutes and the successful scale-up of the absorber deposition process to greater than 500 cm{sup 2}. Other requisite processes saw continued development, such as a rapid, low-cost method for transparent window deposition. Subsequent to the demonstration of 13% module efficiency, scribing techniques were further improved that resulted in a reduction in shunt losses and higher module fill factor. This improvement, and the concomitant gain in fill factor, would yield efficiencies approaching 14% on modules having a short-circuit and open-circuit voltage comparable to the record module.

  14. Research on polycrystalline thin-film submodules based on CuInSe{sub 2} materials. Final subcontract report, 11 November 1990--30 June 1995

    SciTech Connect

    Arya, R; Fogleboch, J; Kessler, J; Russell, L; Skibo, S; Wiedeman, S

    1996-01-01

    This report describes work performed in development of CIS-based photovoltaic (PV) products. The activity began with developing manufacturable deposition methods for all required thin-film layers and developing and understanding processes using those methods. It included demonstrating the potential for high conversion efficiency and followed with developing viable methods for module segment formation and interconnection. These process steps were integrated to fabricate monolithic CIS-based submodules. An important result of this program is the basis of understanding established in developing this material for PV applications, which is necessary to address issues of manufacturability and cost-which were recognized early in the program as being determined by successful solutions to issues of yield, reproducibility, and control as much as by material and energy costs, conversion efficiency, and process speed. Solarex identified at least one absorber formation process that is very robust to shunt formation from pinholes or point defects, tolerant of variation in processing temperature and elemental composition, and is capable of producing high conversion efficiency. This program also allowed development and scale-up of processes for the deposition of all other substrate, heterojunction buffer, and window layers and associated scribing/module formation operations to 1000-CM{sup 2} size. At the completion of this program, Solarex has in place most of the necessary elements to begin the transition to pilot operation of CIS manufacturing activities.

  15. Chemiluminescence studies between aqueous phase synthesized mercaptosuccinic acid capped cadmium telluride quantum dots and luminol-H2O2

    NASA Astrophysics Data System (ADS)

    Kaviyarasan, Kulandaivelu; Anandan, Sambandam; Mangalaraja, Ramalinga Viswanathan; Asiri, Abdullah M.; Wu, Jerry J.

    2016-08-01

    Mercaptosuccinic acid capped Cadmium telluride quantum dots have been successfully synthesized via aqueous phase method. The products were well characterized by a number of analytical techniques, including FT-IR, XRD, HRTEM, and a corrected particle size analysis by the statistical treatment of several AFM measurements. Chemiluminescence experiments were performed to explore the resonance energy transfer between chemiluminescence donor (luminol-H2O2 system) and acceptor CdTe QDs. The combination of such donor and acceptor dramatically reduce the fluorescence while compared to pristine CdTe QDs without any exciting light source, which is due to the occurrence of chemiluminescence resonance energy transfer (CRET) processes.

  16. Thin film hydrogen sensor

    DOEpatents

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  17. Thin film hydrogen sensor

    DOEpatents

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  18. Biomimetic thin film synthesis

    SciTech Connect

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  19. A Cadmium telluride micro-Spectometers Hard X ray Polarimeter for a balloon borne payload

    NASA Astrophysics Data System (ADS)

    Caroli, Ezio; Hernanz, Margarita; Ferrando, Philippe; Del Sordo, Stefano; Stephen, John; Laurent, Philippe; Alvarez, Jose M.; Auricchio, Natalia; Budtz-Jorgensen, Carl; Curado da Silva4, Rui M.; Limousin, Olivier; Galvez, Jose L.; Gloster, Paul Colin; Isern, Jordi; Maia, Jorge M.

    2012-07-01

    In the next generation of space instrumentation for hard X-ray astrophysics, the measurement of the polarization status of cosmic sources will be a key observational parameter in order to help understand the various production mechanisms and the source geometry. As polarisation observations are very difficult to perform, new telescopes operating in this energy range should be optimized for this type of measurement. In this perspective, we present the concept of a small high-performance spectrometer designed to operate as a scattering polarimeter between 100 and 500 keV and suitable for a stratospheric balloon-borne payload: CμSP (Cadmium telluride μ-Spectrometers Polarimeter). This instrument will be dedicated to perform an accurate and reliable measurement of the polarization status of the Crab pulsar, i.e. the polarization level and direction. The detector with 3D spatial resolution is made of CZT spectrometers in a highly segmented configuration in order to enhance as much as possible the sensitivity to the linear polarisation of detected photons. We discuss different configurations based on recent development results as well as possible improvements under study. Furthermore we describe a possible baseline design of the payload, which can also be seen as a pathfinder for a high performance detector for the next generation of hard X and soft gamma ray telescopes based on high energy focussing optics (e.g. Laue lenses) and/or advanced Compton instruments. Finally, we present Monte Carlo evaluations of the achievable sensitivity to polarisation as a function of different detector characteristics.

  20. Sintered cadmium telluride nanocrystal photovoltaics: Improving chemistry to facilitate roll-to-roll fabrication

    NASA Astrophysics Data System (ADS)

    Kurley, James Matthew, III

    Recent interest in clean, renewable energy has increased importance on cost-effective and materials efficient deposition methods. Solution-processed solar cells utilizing cadmium telluride nanocrystal inks offer a viable method for reducing cost, increasing materials effectiveness, and decreasing the need for fossil fuels in the near future. Initial work focused on developing a useful platform for testing new chemistries for solubilizing and depositing nanocrystal inks. Layer-by-layer deposition using a combination of spincoating, cadmium chloride treatment, and annealing created a photovoltaic-grade CdTe absorber layer. In conjunction with layer-by-layer deposition, a device architecture of ITO/CdTe/ZnO/Al was utilized to create power conversion efficiencies of over 12% with the help of current/light soaking. Detailed exploration of device geometry, capacitance measurements, and intensity- and temperature-dependent testing determined the ITO/CdTe interface required additional scrutiny. This initial investigation sparked three new. avenues of research: create an Ohmic contact to CdTe, remove the cadmium chloride bath treatment, and create a roll-to-roll friendly process. Improved contact between ITO and CdTe was achieved by using a variety of materials already proven to create Ohmic contact to CdTe. While most of these materials were previously employed using standard approaches, solution-processed analogs were explored. The cadmium chloride bath treatment proved inconsistent, wasteful, and difficult to utilize quickly. It was removed by using trichlorocadmate-capped nanocrystals to combine the semiconductor with the required grain growth agent. To establish roll-to-roll friendly process, the deposition method was improved, heating source changed, and cadmium chloride bath step was removed. Spraycoating or doctor-blading the trichlorocadmate-capped nanocrystals followed by annealing with an IR lamp established a process that can deposit CdTe in a high throughput

  1. Mercury-Cadmium-Telluride Focal Plane Array Performance Under Non-Standard Operating Conditions

    NASA Technical Reports Server (NTRS)

    Richardson, Brandon S.; Eastwood, Michael L.; Bruce, Carl F.; Green, Robert O.; Coles, J. B.

    2011-01-01

    This paper highlights a new technique that allows the Teledyne Scientific & Imaging LLC TCM6604A Mercury-Cadmium-Telluride (MCT) Focal Plane Array (FPA) to operate at room temperature. The Teledyne MCT FPA has been a standard in Imaging Spectroscopy since its creation in the 1980's. This FPA has been used in applications ranging from space instruments such as CRISM, M3 and ARTEMIS to airborne instruments such as MaRS and the Next Generation AVIRIS Instruments1. Precise focal plane alignment is always a challenge for such instruments. The current FPA alignment process results in multiple cold cycles requiring week-long durations, thereby increasing the risk and cost of a project. These alignment cycles are necessary because optimal alignment is approached incrementally and can only be measured with the FPA and Optics at standard operating conditions, requiring a cold instrument. Instruments using this FPA are normally cooled to temperatures below 150K for the MCT FPA to properly function. When the FPA is run at higher temperatures the dark current increases saturating the output. This paper covers the prospect of warm MCT FPA operation from a theoretical and experimental perspective. We discuss the empirical models and physical laws that govern MCT material properties and predict the optimal settings that will result in the best MCT PA performance at 300K. Theoretical results are then calculated for the proposed settings. We finally present the images and data obtained using the actual system with the warm MCT FPA settings. The paper concludes by emphasizing the strong positive correlation between the measured values and the theoretical results.

  2. Mercury-Cadmium-Telluride Focal Plane Array Performance Under Non-Standard Operating Conditions

    NASA Technical Reports Server (NTRS)

    Richardson, Brandon S.; Eastwood, Michael L.; Bruce, Carl F.; Green, Robert O.; Coles, J. B.

    2011-01-01

    This paper highlights a new technique that allows the Teledyne Scientific & Imaging LLC TCM6604A Mercury-Cadmium-Telluride (MCT) Focal Plane Array (FPA) to operate at room temperature. The Teledyne MCT FPA has been a standard in Imaging Spectroscopy since its creation in the 1980's. This FPA has been used in applications ranging from space instruments such as CRISM, M3 and ARTEMIS to airborne instruments such as MaRS and the Next Generation AVIRIS Instruments1. Precise focal plane alignment is always a challenge for such instruments. The current FPA alignment process results in multiple cold cycles requiring week-long durations, thereby increasing the risk and cost of a project. These alignment cycles are necessary because optimal alignment is approached incrementally and can only be measured with the FPA and Optics at standard operating conditions, requiring a cold instrument. Instruments using this FPA are normally cooled to temperatures below 150K for the MCT FPA to properly function. When the FPA is run at higher temperatures the dark current increases saturating the output. This paper covers the prospect of warm MCT FPA operation from a theoretical and experimental perspective. We discuss the empirical models and physical laws that govern MCT material properties and predict the optimal settings that will result in the best MCT PA performance at 300K. Theoretical results are then calculated for the proposed settings. We finally present the images and data obtained using the actual system with the warm MCT FPA settings. The paper concludes by emphasizing the strong positive correlation between the measured values and the theoretical results.

  3. Mitochondrial Toxicity of Cadmium Telluride Quantum Dot Nanoparticles in Mammalian Hepatocytes

    PubMed Central

    Nguyen, Kathy C.; Rippstein, Peter; Tayabali, Azam F.; Willmore, William G.

    2015-01-01

    There are an increasing number of studies indicating that mitochondria are relevant targets in nanomaterial-induced toxicity. However, the underlying mechanisms by which nanoparticles (NPs) interact with these organelles and affect their functions are unknown. The aim of this study was to investigate the effects of cadmium telluride quantum dot (CdTe-QD) NPs on mitochondria in human hepatocellular carcinoma HepG2 cells. CdTe-QD treatment resulted in the enlargement of mitochondria as examined with transmission electron microscopy and confocal microscopy. CdTe-QDs appeared to associate with the isolated mitochondria as detected by their inherent fluorescence. Further analyses revealed that CdTe-QD caused disruption of mitochondrial membrane potential, increased intracellular calcium levels, impaired cellular respiration, and decreased adenosine triphosphate synthesis. The effects of CdTe-QDs on mitochondrial oxidative phosphorylation were evidenced by changes in levels and activities of the enzymes of the electron transport chain. Elevation of peroxisome proliferator-activated receptor-γ coactivator levels after CdTe-QD treatment suggested the effects of CdTe-QDs on mitochondrial biogenesis. Our results also showed that the effects of CdTe-QDs were similar or greater to those of cadmium chloride at equivalent concentrations of cadmium, suggesting that the toxic effects of CdTe-QDs were not solely due to cadmium released from the NPs. Overall, the study demonstrated that CdTe-QDs induced multifarious toxicity by causing changes in mitochondrial morphology and structure, as well as impairing their function and stimulating their biogenesis. PMID:25809595

  4. Ceramic Composite Thin Films

    NASA Technical Reports Server (NTRS)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  5. Multifunctional thin film surface

    DOEpatents

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  6. Thin film tritium dosimetry

    DOEpatents

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  7. Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films

    SciTech Connect

    Kumar, B. Rajesh; Hymavathi, B.; Rao, T. Subba

    2014-01-28

    Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2θ = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (ΔE) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, λ. The value of n and k increases with the increase of substrate temperature.

  8. Crystal structure analysis in solution-processed uniaxially oriented polycrystalline thin film of non-peripheral octahexyl phthalocyanine by grazing incidence wide-angle x-ray scattering techniques

    NASA Astrophysics Data System (ADS)

    Ohmori, Masashi; Uno, Takashi; Nakatani, Mitsuhiro; Nakano, Chika; Fujii, Akihiko; Ozaki, Masanori

    2016-10-01

    Uniaxially oriented thin films of metal-free non-peripherally octahexyl-substituted phthalocyanine (C6PcH2), which exhibits high carrier mobility, have been fabricated by the bar-coating technique, which is a simple solution process. The molecular orientation and molecular steps in the thin film were observed by the polarized spectroscopy and the atomic force microscopy, respectively. The three-dimensional molecular packing structure in the thin film was investigated by the grazing incidence wide-angle X-ray scattering technique with an in-plane sample rotation. The crystal orientation was clarified, and the three-dimensional molecular packing structure of the thin film was found to match the single crystal structure. Moreover, the X-ray diffraction patterns of the oriented thin films were simulated by using the lattice parameters of C6PcH2 single crystal to reproduce the observed X-ray diffraction patterns.

  9. Examination of a polycrystalline thin-film model to explore the relation between probe size and structural correlation length in fluctuation electron microscopy.

    PubMed

    Treacy, M M J; Gibson, J M

    2012-02-01

    We examine simulated electron microdiffraction patterns from models of thin polycrystalline silicon. The models are made by a Voronoi tessellation of random points in a box. The Voronoi domains are randomly selected to contain either a randomly-oriented cubic crystalline grain or a region of continuous random network material. The microdiffraction simulations from coherent probes of different widths are computed at the ideal kinematical limit, ignoring inelastic and multiple scattering. By examining the normalized intensity variance that is obtained in fluctuation electron microscopy experiments, we confirm that intensity fluctuations increase monotonically with the percentage of crystalline grains in the material. However, anomalously high variance is observed for models that have 100% crystalline grains with no imperfections. We confirm that the reduced normalized variance, V(k,R) - 1, that is associated with four-body correlations at scattering vector k, varies inversely with specimen thickness. Further, for probe sizes R larger than the mean grain size, we confirm that the reduced normalized variance obeys the predicted form given by Gibson et al. [Ultramicroscopy, 83, 169-178 (2000)] for the kinematical coherent scattering limit.

  10. High, magnetic-field-insensitive transport critical currents in unoriented polycrystalline thin films of Tl 2CaBa 2Cu 2O y

    NASA Astrophysics Data System (ADS)

    Kwak, J. F.; Venturini, E. L.; Baughman, R. J.; Morosin, B.; Ginley, D. S.

    1988-08-01

    We report critical current measurements for unoriented polycrystalline films of Tl 2CaBa 2Cu 2O y. At 77 K these films show critical current densities ranging from 10 000 to 110 000 A/cm 2, with a median value of 50 000 A/cm 2. Moreover, the best films' critical currents at 77 K drop less than 50% in an applied magnetic field of 1 T, and less than a factor of 20 at 6 T. At 4 K, critical current densities over 10 6A/cm 2 with less than 15% drop at 6 T have been obtained. The zero-field temperature dependence of the critical current from 4 to 95 K is well described as quadratic. High-field magnetization loops on the films at 76 K show a striking collapse in hysteresis below 0.6 T. Our results indicate that, although the grains in these films are Josephson-coupled, the strength of the coupling is greatly improved over other high- Tc granular systems.

  11. Raman scattering studies of polycrystalline 3C-SiC deposited on SiO 2 and AlN thin films

    NASA Astrophysics Data System (ADS)

    Jeong, Junho; Jang, Kiwan; Lee, Ho Sueb; Chung, Gwiy-Sang; Kim, Gwi-yeol

    2009-01-01

    This paper describes the Raman scattering characteristics of the Raman spectra of 0.4- and 2.0-μm-thick polycrystalline (poly) 3C-SiC on AlN /Si and SiO 2/Si by using atmosphere pressure chemical vapor deposition (APCVD) with hexamethyldisilane (HMDS) and carrier gases (Ar+H 2). In the Raman spectra for all growth temperatures, the D and G peaks of nanocrystalline graphite were measured. The C/Si rate of poly 3C-SiC deposited in (Ar+H 2) atmosphere was higher than that in H 2 gas, although HMDS C/Si rate is 3. The biaxial stresses of 2.0-μm-thick 3C-SiC on SiO 2 and AlN, which was deposited at the growth temperature of 1180 °C after annealing AlN at 800 and 1100 °C, were calculated as 428 and 896 MPa, respectively. Therefore, poly 3C-SiC should admix with nanocrystalline graphite due to the addition of Ar gas and poly 3C-SiC on SiO 2 should be better than on AlN for harsh environmental MEMS applications.

  12. Indium donor/metal vacancy defect complexes in cadmium telluride studied with perturbed angular correlation spectroscopy

    NASA Astrophysics Data System (ADS)

    Griffith, John Warren

    Semi-insulating, powder samples of Cadmium Telluride (CdTe) have been studied using 111In Time Differential Perturbed Angular Correlation (PAC) Spectroscopy. The samples have been lightly doped (˜10 12 cm-3) with 111In atoms, which occupy well-defined metal (Cd) lattice sites and act as probes of the local environment. These substitutional donors form a single defect complex in CdTe. This complex has been identified and characterized as a function of temperature. Those indium probes that are not complexed occupy metal lattice sites with no defect in the local vicinity. Samples containing metal vacancy concentrations as large as 500 ppm have been prepared by a high temperature anneal and quench. The defect complex involves the trapping of a cadmium metal vacancy bound to the indium probe. The electric field gradient (EFG) experienced by probe atoms has a coupling constant of nuQ = 61.5(5) MHz and is not axially symmetric, with the asymmetry parameter given by eta = 0.16(4). It is believed that this asymmetry results from a relaxation of the chalcogen (Te) atoms adjacent to the metal vacancy, with the tellurium atom shared by the probe atom and the vacancy providing the dominant contribution. The fraction of complexed probe atoms increases as the sample temperature is decreased, and is still increasing at room temperature. Complexed fractions are reproducible on cycling within the temperature range 40 to 200°C. The binding energy of the complex has been measured to be 0.15(2) eV and is independent of metal vacancy concentration, which varies and is dependent on the details of the quench. In rapidly cooled samples, a non-equilibrium number of these defect complexes is observed. This state equilibrates with a time constant of 45(5) hours at 15°C, implying that at least one of the two constituents involved in the complex has a significant diffusion rate at this temperature. Under the assumption that vacancy diffusion mechanisms dominate at this temperature, it is

  13. The dependence of singlet exciton relaxation on excitation density and temperature in polycrystalline tetracene thin films: kinetic evidence for a dark intermediate state and implications for singlet fission.

    PubMed

    Burdett, Jonathan J; Gosztola, David; Bardeen, Christopher J

    2011-12-07

    The excited state dynamics of polycrystalline tetracene films are studied using femtosecond transient absorption in combination with picosecond fluorescence, continuing work reported in an earlier paper [J. J. Burdett, A. M. Muller, D. Gosztola, and C. J. Bardeen, J. Chem. Phys. 133, 144506 (2010)]. A study of the intensity dependence of the singlet state decay is conducted to understand the origins of the discrepancy between the broadband transient absorption and fluorescence experiments seen previously. High-sensitivity single channel transient absorption experiments allow us to compare the transient absorption dynamics to the fluorescence dynamics measured at identical laser fluences. At high excitation densities, an exciton-exciton annihilation rate constant of ~1 × 10(-8) cm(3) s(-1) leads to rapid singlet decays, but at excitation densities of 2 × 10(17) cm(-3) or less the kinetics of the transient absorption match those of the fluorescence. At these lower excitation densities, both measurements confirm that the initially excited singlet state relaxes with a decay time of 80 ± 3 ps, not 9.2 ps as claimed in the earlier paper. In order to investigate the origin of the singlet decay, the wavelength-resolved fluorescence dynamics were measured at 298 K, 77 K, and 4 K. A high-energy J-type emitting species undergo a rapid (~100 ps) decay at all temperatures, while at 77 K and 4 K additional species with H-type and J-type emission lineshapes have much longer lifetimes. A global analysis of the wavelength-dependent decays shows that the initial ~100 ps decay occurs to a dark state and not via energy transfer to lower energy bright states. Varying the excitation wavelength from 400 nm to 510 nm had no effect on the fast decay, suggesting that there is no energy threshold for the initial singlet relaxation. The presence of different emitting species at different temperatures means that earlier interpretations of the fluorescence behavior in terms of one singlet

  14. Thin film temperature sensor

    NASA Technical Reports Server (NTRS)

    Grant, H. P.; Przybyszewski, J. S.

    1980-01-01

    Thin film surface temperature sensors were developed. The sensors were made of platinum-platinum/10 percent rhodium thermocouples with associated thin film-to-lead wire connections and sputtered on aluminum oxide coated simulated turbine blades for testing. Tests included exposure to vibration, low velocity hydrocarbon hot gas flow to 1250 K, and furnace calibrations. Thermal electromotive force was typically two percent below standard type S thermocouples. Mean time to failure was 42 hours at a hot gas flow temperature of 1250 K and an average of 15 cycles to room temperature. Failures were mainly due to separation of the platinum thin film from the aluminum oxide surface. Several techniques to improve the adhesion of the platinum are discussed.

  15. Microstructural characterization in nanocrystalline ceramic thin films

    NASA Astrophysics Data System (ADS)

    Kim, Hakkwan

    The primary objective of this research is to investigate the effects of process variables on microstructure in several fluoride and oxide thin films prepared by vapor deposition, in order to predict the properties and behaviors of nanocrystalline thin film materials. There are three distinct stages of this research. The first stage focuses on measuring of the porosity in polycrystalline thin films of a variety of fluorides as a function of the substrate temperature during deposition, and discussing the mechanism by which the porosity varies as a function of the process variables. We have measured the porosity in thin films of lithium fluoride (LiF), magnesium fluoride (MgF2), barium fluoride (BaF 2) and calcium fluoride (CaF2) using an atomic force microscope (AFM) and a quartz crystal thickness monitor. The porosity is very sensitive to the substrate temperature and decreases as the substrate temperature increases. Consistent behavior is observed among all of the materials in this study. The second stage is to understand the film microstructure including grain growth and texture development, because these factors are known to influence the behavior and stability of polycrystalline thin films. This study focuses on grain growth and texture development in polycrystalline lithium fluoride thin films using dark field (DF) transmission electron microscopy (TEM). It is demonstrated that we can isolate the size distribution of <111> surface normal grains from the overall size distribution, based on simple and plausible assumptions about the texture. The {111} texture formation and surface morphology were also observed by x-ray diffraction (XRD) and AFM, respectively. The grain size distributions become clearly bimodal as the annealing time increases, and we deduce that the short-time size distributions are also a sum of two overlapping peaks. The smaller grain-size peak in the distribution corresponds to the {111}-oriented grains which do not grow significantly, while

  16. Thin film ceramic thermocouples

    NASA Technical Reports Server (NTRS)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  17. Thin film resonator technology.

    PubMed

    Lakin, Kenneth M

    2005-05-01

    Advances in wireless systems have placed increased demands on high performance frequency control devices for operation into the microwave range. With spectrum crowding, high bandwidth requirements, miniaturization, and low cost requirements as a background, the thin film resonator technology has evolved into the mainstream of applications. This technology has been under development for over 40 years in one form or another, but it required significant advances in integrated circuit processing to reach microwave frequencies and practical manufacturing for high-volume applications. This paper will survey the development of the thin film resonator technology and describe the core elements that give rise to resonators and filters for today's high performance wireless applications.

  18. Biomimetic thin film deposition

    NASA Astrophysics Data System (ADS)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  19. Thin film solar cell workshop

    NASA Technical Reports Server (NTRS)

    Armstrong, Joe; Jeffrey, Frank

    1993-01-01

    A summation of responses to questions posed to the thin-film solar cell workshop and the ensuing discussion is provided. Participants in the workshop included photovoltaic manufacturers (both thin film and crystalline), cell performance investigators, and consumers.

  20. Thin films for material engineering

    NASA Astrophysics Data System (ADS)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  1. NMR characterization of thin films

    DOEpatents

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  2. VACUUM DEPOSITION OF THIN FILMS,

    DTIC Science & Technology

    The book deals with methods of obtaining and processing thin films , methods of measuring the deposition rate and thickness of thin-film layers, and...the main fields of application of thin films . Vacuum requirements and the requirements for the composition of the residual medium in thermal...evaporation and cathode sputtering are given, and modern methods of producing and measuring vacuums and the equipment used in obtaining thin films are described. (Author)

  3. NMR characterization of thin films

    DOEpatents

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  4. Thin film photovoltaic cell

    DOEpatents

    Meakin, John D.; Bragagnolo, Julio

    1982-01-01

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  5. Protein thin film machines.

    PubMed

    Federici, Stefania; Oliviero, Giulio; Hamad-Schifferli, Kimberly; Bergese, Paolo

    2010-12-01

    We report the first example of microcantilever beams that are reversibly driven by protein thin film machines fueled by cycling the salt concentration of the surrounding solution. We also show that upon the same salinity stimulus the drive can be completely reversed in its direction by introducing a surface coating ligand. Experimental results are throughout discussed within a general yet simple thermodynamic model.

  6. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  7. Mercury-cadmium-telluride waveguides--a novel strategy for on-chip mid-infrared sensors.

    PubMed

    Wang, Xiaofeng; Antoszewski, Jarek; Putrino, Gino; Lei, Wen; Faraone, Lorenzo; Mizaikoff, Boris

    2013-11-19

    We report the first planar waveguides made from mercury-cadmium-telluride (MCT)-a material to date exclusively used for mid-infrared (MIR) detector elements-serving as on-chip MIR evanescent field transducers in combination with tunable quantum cascade lasers (tQCLs) emitting in the spectral regime of 5.78-6.35 μm. This novel MIR sensing approach utilizes structured MCT chips fabricated via molecular beam epitaxy (MBE) as waveguide enabling sensing via evanescent field absorption spectroscopy, as demonstrated by the detection of 1 nL of acetone. Complementary finite difference time domain (FDTD) simulations fit well with the experimentally obtained data and predict an improvement of the limit of detection by at least 2 orders of magnitude upon implementation of thinner MCT waveguides. With the first demonstration of chemical sensing using on-chip MCT waveguides, monolithically fabricated IR sensing systems directly interfacing the waveguide with the MCT detector element may be envisaged.

  8. Size-dependent active effect of cadmium telluride quantum dots on luminol-potassium periodate chemiluminescence system for levodopa detection.

    PubMed

    Wang, Jianbo; Cui, Lijuan; Han, Suqin; Hao, Fang

    2015-06-01

    It was found that cadmium telluride (CdTe) quantum dots (QDs) with different sizes can have a great sensitizing effect on chemiluminescence (CL) emission from luminol-potassium periodate (KIO4) system. Levodopa, a widely prescribed drug in the treatment of Parkinson's disease, could inhibit luminol-KIO4-CdTe QDs CL reaction in alkaline solution. The inhibited CL intensity was proportional to the concentration of levodopa in the range from 8.0 nM to 10.0 μM. The detection limit was 3.8 nM. This method has been successfully applied to determine levodopa in pharmaceutical preparation and human urine and plasma samples with recoveries of 94.1-105.4%. This was the first work for inhibition effect determination of levodopa using a QD-based CL method.

  9. Monte Carlo and least-squares methods applied in unfolding of X-ray spectra measured with cadmium telluride detectors

    NASA Astrophysics Data System (ADS)

    Moralles, M.; Bonifácio, D. A. B.; Bottaro, M.; Pereira, M. A. G.

    2007-09-01

    Spectra of calibration sources and X-ray beams were measured with a cadmium telluride (CdTe) detector. The response function of the detector was simulated using the GEANT4 Monte Carlo toolkit. Trapping of charge carriers were taken into account using the Hecht equation in the active zone of the CdTe crystal associated with a continuous function to produce drop of charge collection efficiency near the metallic contacts and borders. The rise time discrimination is approximated by a cut in the depth of the interaction relative to cathode and corrections that depend on the pulse amplitude. The least-squares method with truncation was employed to unfold X-ray spectra typically used in medical diagnostics and the results were compared with reference data.

  10. A rapid and sensitive assay for determination of doxycycline using thioglycolic acid-capped cadmium telluride quantum dots.

    PubMed

    Tashkhourian, Javad; Absalan, Ghodratollah; Jafari, Marzieh; Zare, Saber

    2016-01-05

    A rapid, simple and inexpensive spectrofluorimetric sensor for determination of doxycycline based on its interaction with thioglycolic acid-capped cadmium telluride quantum dots (TGA/CdTe QDs) has been developed. Under the optimum experimental conditions, the sensor exhibited a fast response time of <10s. The results revealed that doxycycline could quench the fluorescence of TGA/CdTe QDs via electron transfer from the QDs to doxycycline through a dynamic quenching mechanism. The sensor permitted determination of doxycycline in a concentration range of 1.9×10(-6)-6.1×10(-5)molL(-1) with a detection limit of 1.1×10(-7)molL(-1). The sensor was applied for determination of doxycycline in honey and human serum samples.

  11. A rapid and sensitive assay for determination of doxycycline using thioglycolic acid-capped cadmium telluride quantum dots

    NASA Astrophysics Data System (ADS)

    Tashkhourian, Javad; Absalan, Ghodratollah; Jafari, Marzieh; Zare, Saber

    2016-01-01

    A rapid, simple and inexpensive spectrofluorimetric sensor for determination of doxycycline based on its interaction with thioglycolic acid-capped cadmium telluride quantum dots (TGA/CdTe QDs) has been developed. Under the optimum experimental conditions, the sensor exhibited a fast response time of <10 s. The results revealed that doxycycline could quench the fluorescence of TGA/CdTe QDs via electron transfer from the QDs to doxycycline through a dynamic quenching mechanism. The sensor permitted determination of doxycycline in a concentration range of 1.9 × 10-6-6.1 × 10-5 mol L-1 with a detection limit of 1.1 × 10-7 mol L-1. The sensor was applied for determination of doxycycline in honey and human serum samples.

  12. Induced electronic anisotropy in bismuth thin films

    SciTech Connect

    Liao, Albert D.; Yao, Mengliang; Opeil, Cyril; Katmis, Ferhat; Moodera, Jagadeesh S.; Li, Mingda; Tang, Shuang; Dresselhaus, Mildred S.

    2014-08-11

    We use magneto-resistance measurements to investigate the effect of texturing in polycrystalline bismuth thin films. Electrical current in bismuth films with texturing such that all grains are oriented with the trigonal axis normal to the film plane is found to flow in an isotropic manner. By contrast, bismuth films with no texture such that not all grains have the same crystallographic orientation exhibit anisotropic current flow, giving rise to preferential current flow pathways in each grain depending on its orientation. Extraction of the mobility and the phase coherence length in both types of films indicates that carrier scattering is not responsible for the observed anisotropic conduction. Evidence from control experiments on antimony thin films suggests that the anisotropy is a result of bismuth's large electron effective mass anisotropy.

  13. Room temperature ferroelectricity in continuous croconic acid thin films

    SciTech Connect

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S.; Zhang, Xiaozhe; Wang, Xiao; Yu, Le; Cheng, Xuemei; DiChiara, Anthony D.; Gruverman, Alexei E-mail: a.enders@me.com Enders, Axel E-mail: a.enders@me.com Xu, Xiaoshan E-mail: a.enders@me.com

    2016-09-05

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  14. Room temperature ferroelectricity in continuous croconic acid thin films

    NASA Astrophysics Data System (ADS)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Zhang, Xiaozhe; Wang, Xiao; Yu, Le; Ahmadi, Zahra; Costa, Paulo S.; DiChiara, Anthony D.; Cheng, Xuemei; Gruverman, Alexei; Enders, Axel; Xu, Xiaoshan

    2016-09-01

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50-100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  15. Electrodeposited CuInSe2 Thin Film Junctions

    NASA Technical Reports Server (NTRS)

    Raffaelle, R. P.; Mantovani, J. G.; Bailey, S. G.; Hepp, A. F.; Gordon, E. M.; Haraway, R.

    1997-01-01

    We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

  16. Development of Materials and Structures for p-type Contacts in Cadmium Telluride Solar Cells

    NASA Astrophysics Data System (ADS)

    Ferizovic, Dino

    Solar cells based on CdTe absorbers are attractive due to the optimal direct band gap energy and large absorption coefficient of CdTe, however, their performance and commercialization is hindered by the lack of reliable p-type contacts. CdTe has a low carrier concentration and a large electron affinity, which results in a requirement of non-realistic work functions for metals to be used as back contacts in the solar cell. Even noble metals such as Ag present a significantly large potential barrier for holes, thereby reducing the hole current through the semiconductor/metal interface. Several attempts to resolve this challenge have been tried, however, many drawbacks have been encountered. Two particular systems, namely Cu2Te thin films and CdTe/ZnTe strained-layer superlattices, are investigated for their potential use as ohmic contacts in CdTe solar cells. A detailed analysis of the optical, electrical, and structural properties of Cu2Te thin films deposited by magnetron sputtering is presented. It is shown that these films have an indirect band gap and highly degenerate semiconductor behavior. The large p-type carrier concentration of Cu2Te films is highly desirable for the application of Cu2Te as a p-type contact to CdTe. In-depth studies of optical transitions and miniband transport in strained-layer CdTe/ZnTe superlattices are presented as well. The band offsets between CdTe and ZnTe were determined by comparison of measured and calculated optical transitions. Superlattice structures that offer best contact performance have been identified by use of tunneling probability simulations. Characterization of CdTe solar cells with above mentioned contacts indicated that contacts based on CdTe/ZnTe superlattices are a viable Cu free option for stable and reliable p-type contacts in CdTe solar cell. The contact performance of Cu2Te thin films was comparable to that of CdTe/ZnTe superlattices and both demonstrated an advantage over contacts based on ZnTe:N thin films

  17. [Spectral emissivity of thin films].

    PubMed

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  18. Thin-film optical initiator

    DOEpatents

    Erickson, Kenneth L.

    2001-01-01

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  19. Thin film superconductor magnetic bearings

    DOEpatents

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  20. Thin-film polycrystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Funghnan, B. W.; Blanc, J.; Phillips, W.; Redfield, D.

    1980-08-01

    Thirty-four new solar cells were fabricated on Wacker Sislo substrates and the AM-1 parameters were measured. A detailed comparison was made between the measurement of minority carrier diffusion length by the OE method and the penetrating light laser scan grain boundary photoresponse linewidth method. The laser scan method has more experimental uncertainty and agrees within 10 to 50% with the QE method. It allows determination of L over a large area. Atomic hydrogen passivation studies continued on Wacker material by three techniques. A method of determining surface recombination velocity, s, from laser scan data was developed. No change in s in completed solar cells after H-plasma treatment was observed within experimental error. H-passivation of bare silicon cars as measured by the new laser scan photoconductivity technique showed very large effects.

  1. Advanced thin film thermocouples

    NASA Technical Reports Server (NTRS)

    Kreider, K. G.; Semancik, S.; Olson, C.

    1984-01-01

    The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.

  2. Studies of arsenic incorporation and P-type doping in epitaxial mercury cadmium telluride thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zandian, Majid

    Doped layer semiconductor structures provide possibilities for novel electronic devices. Growth of Hg1-xCdxTe by molecular beam epitaxy (MBE) allows precise control over the doping profile and position of heterojunctions as well as structural properties of this ternary alloy. Even though n-type doping using indium is well established, little is known about p-type doping in this material system by MBE. Several elements such as Ag, Au, Sb, Bi and P have been previously used, however high diffusion coefficient and amphoteric behavior of these atoms in HgCdTe has restricted their use in heterojunction devices where control over doping profiles and concentrations is needed. We investigated arsenic incorporation efficiency as a function of As 4 flux and growth temperature. The sticking coefficient of As is substantially higher at lower growth temperature compared to growth at 190°C. For samples grown at 170°C, the etch pit density (EPD) is higher compared to p-type As doped samples grown at 190°C. Higher EPD is associated with columnar twin defects observed in transmission electron microscopy (TEM) studies of low growth temperature samples. Growth at low temperature of 170°C causes Hg rich condition promoting twin formation. Therefore, growth of p-type layers doped with As at low temperatures require optimization of II/VI flux ratio to eliminate columnar twin defects. It is possible to incorporate As at normal MBE growth temperature of 190°C but very high flux of As has to used to overcome low sticking coefficient of As at these temperatures. We proposed a mechanism for the activation of As involving Hg vacancies (VHg··) where Te is moved to a Hg vacancy, leaving behind a Te vacancy, which is then filled by an As atom. The Te that is now on a Hg site (i.e., Te antisite) migrates to the surface and leaves the crystal.

  3. Controlled cadmium telluride thin films for solar cell applications (emerging materials systems for solar cell applications). Final technical report, April 9, 1979-April 8, 1980

    SciTech Connect

    Vedam, K; Das, M B; Krishnaswamy, S V

    1980-06-01

    After a brief review of the work done during the first three quarters, the work done during the last quarter is discussed in detail. In brief, CdTe sputtered self-doped and indium-doped n-type layers on Ni-film on glass have been investigated for film resistivity, contact resistance, Hall mobility and Schottky barrier diode characteristics. Ni has been found to provide satisfactory ohmic contacts and self-doped samples have indicated Hall mobility of approximately 8cm/sup 2//Vsec when the effective doping concentration is approximately 10/sup 18/cm/sup -3/. Use of indium doped sputtered films, when properly surface treated prior to metallization, appear to yield the best kind of Schottky barrier diode with approximate barrier height of 0.77 volt and Richardson constant A* approx. = 60 A/cm/sup 20/K/sup 2/. In spite of these attractive parameter values, these devices showed low V/sub oc/ and the capacitance showed unexpected frequency dependence that require further investigation. Finally suggestions for future work is presented.

  4. Mechanics of Thin Films

    DTIC Science & Technology

    1992-02-06

    32 (1991). INTRODUCTION Many technological areas currently use designs that rely on thin films for a variety of effects that include mechanical...film thickness, d is the width of the columnar grains, and Q is the atomic volume. The current film thickness h0 increases in proportion to the film...temperature and on the level of the far field uniform stress (121. h careful examination of these assumptions is currently under way. This work has

  5. Microstructure of Thin Films

    DTIC Science & Technology

    1990-02-07

    study of Ion Assisted deposition (IAD) with different materials: metals , Al, Ag, and dielectrics, nitrides, fluorides and oxides. Some additional...optical thin films. The materials studied by ion -assisted deposition has ranged over metals , especially silver and aluminum, and dielectrics, especially... Ion -assisted deposition of metals It was of interest to us to determine if the great benefits of io-assisted deposition in the fabrication of

  6. Thin film composite electrolyte

    DOEpatents

    Schucker, Robert C.

    2007-08-14

    The invention is a thin film composite solid (and a means for making such) suitable for use as an electrolyte, having a first layer of a dense, non-porous conductive material; a second layer of a porous ionic conductive material; and a third layer of a dense non-porous conductive material, wherein the second layer has a Coefficient of thermal expansion within 5% of the coefficient of thermal expansion of the first and third layers.

  7. Thin film scintillators

    NASA Astrophysics Data System (ADS)

    McDonald, Warren; McKinney, George; Tzolov, Marian

    2015-03-01

    Scintillating materials convert energy flux (particles or electromagnetic waves) into light with spectral characteristic matching a subsequent light detector. Commercial scintillators such as yttrium aluminum garnet (YAG) and yttrium aluminum perovskite (YAP) are commonly used. These are inefficient at lower energies due to the conductive coating present on their top surface, which is needed to avoid charging. We hypothesize that nano-structured thin film scintillators will outperform the commercial scintillators at low electron energies. We have developed alternative thin film scintillators, zinc tungstate and zinc oxide, which show promise for higher sensitivity to lower energy electrons since they are inherently conductive. Zinc tungstate films exhibit photoluminescence quantum efficiency of 74%. Cathodoluminescence spectroscopy was applied in transmission and reflection geometries. The comparison between the thin films and the YAG and YAP commercial scintillators shows much higher light output from the zinc tungstate and zinc oxide at electron energies less than 5 keV. Our films were integrated in a backscattered electron detector. This detector delivers better images than an identical detector with commercial YAG scintillator at low electron energies. Dr. Nicholas Barbi from PulseTor LLC, Dr. Anura Goonewardene, NSF Grants: #0806660, #1058829, #0923047.

  8. Thin Film Optical Coatings

    NASA Astrophysics Data System (ADS)

    Ristau, Detlev; Ehlers, Henrik

    Within the scientific conception of the modern world, thin film optical coatings can be interpreted as one-dimensional photonic crystals. In general, they are composed of a sequence of single layers which consist of different transparent dielectrics with a thickness in the nanometer scale according to the operation wavelength range. The major function of these photonic structures is to adapt the properties of an optical surface to the needs of specific applications. By application of optical thin film coatings with optimized designs, the spectral characteristics of a surface can be modified to practically any required transfer function for a certain wavelength range. For example, the Fresnel reflection of a lens or a laser window can be suppressed for a broad wavelength range by depositing an antireflective coating containing only a few single layers. On the basis of a layer stack with alternating high- and low-refracting materials, high reflectance values up to 99.999% can be achieved for a certain laser wavelength. In addition to these basic functions, optical coatings can realize a broad variety of spectral filter characteristics according to even extremely sophisticated demands in modern precision optics and laser technology. Moreover, recent developments in optical thin film technology provide the means to combine selected optical properties with other features concerning, for instance, the thermal, mechanical or chemical stability of a surface. The latest progress in ophthalmic coatings even includes the integration of self-cleaning, photoactive or anti-fogging functions in antireflective coatings on glass.

  9. Direct observation of Barkhausen avalanche in Co thin films.

    PubMed

    Kim, Dong-Hyun; Choe, Sug-Bong; Shin, Sung-Chul

    2003-02-28

    We report direct full-field magneto-optical observations of Barkhausen avalanches in Co polycrystalline thin films at criticality. We provide experimental evidence for the validity of a phenomenological model of the Barkhausen avalanche originally proposed by Cizeau, Zapperi, Durin, and Stanley [Phys. Rev. Lett. 79, 4669 (1997)

  10. Thin film processing of photorefractive BaTiO3

    NASA Technical Reports Server (NTRS)

    Schuster, Paul R.; Potember, Richard S.

    1991-01-01

    The principle objectives of this ongoing research involve the preparation and characterization of polycrystalline single-domain thin films of BaTiO3 for photorefractive applications. These films must be continuous, free of cracks, and of high optical quality. The two methods proposed are sputtering and sol-gel related processing.

  11. Record low temperature Mo doped V2O5 thermochromic thin films for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Nazemiyan, M.; Jalili, Y. S.

    2013-11-01

    Thermochromic properties of polycrystalline molybdenum doped vanadium pentoxide thin films grown by the spray pyrolysis technique were investigated. Tetragonal thin film structures of this system are grown. The transmittance spectral analysis with temperature indicates a record semiconductor-metal transition temperature of < 50oC. This critical temperature is approximately 1/3 to 1/6 of magnitude expected for V2O5 thin films. The resistance of the thermochromic thin film also underwent a transition or phase change as expected, a reduction from more than few mega ohms to less than kilo ohm regime indicating potential applications in optoelectronics.

  12. Roughness of CdTe thin films grown on glass by hot wall epitaxy

    NASA Astrophysics Data System (ADS)

    Leal, F. F.; Ferreira, S. O.; Menezes-Sobrinho, I. L.; Faria, T. E.

    2005-01-01

    Cadmium telluride films were grown on glass substrates using the hot wall epitaxy (HWE) technique. The samples were polycrystalline with a preferential (111) orientation. Scanning electron micrographs reveal a grain size between 0.1 and 0.5 µm. The surface morphology of the samples was studied by measuring the roughness profile using a stylus profiler. The roughness as a function of growth time and scale size were investigated to determine the growth and roughness exponents, β and α, respectively. From the results we can conclude that the growth surface has a self-affine character with a roughness exponent α equal to 0.69 ± 0.03 and almost independent of growth time. The growth exponent β was equal to 0.38 ± 0.06. These values agree with that determined previously for CdTe(111) films grown on GaAs(100).

  13. High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications

    NASA Astrophysics Data System (ADS)

    Jin, Yao O.; John, David Saint; Podraza, Nikolas J.; Jackson, Thomas N.; Horn, Mark W.

    2015-03-01

    Molybdenum oxide (MoOx) and nickel oxide (NiOx) thin films were deposited by reactive biased target ion beam deposition. MoOx thin film resistivity varied from 3 to 2000 Ω.cm with a temperature coefficient of resistance (TCR) from -1.7% to -3.2%/K, and NiOx thin film resistivity varied from 1 to 300 Ω.cm with a TCR from -2.2% to -3.3%/K, both easily controlled by varying the oxygen partial pressure. Biased target ion beam deposited high TCR MoOx and NiOx thin films are polycrystalline semiconductors and have good stability in air. Compared with commonly used vanadium oxide thin films, MoOx or NiOx thin films offer improved process control for resistive temperature sensors.

  14. Synthesis and characterization of copper antimony tin sulphide thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Ali, N.; Hussain, A.; Ahmed, R.; Wan Shamsuri, W. N.; Fu, Y. Q.

    2016-12-01

    Low price thin film modules based on Copper antimony tin sulphide (CATS) are introduced for solar harvesting to compete for the already developed compound semiconductors. Here, CATS thin films were deposited on soda lime glass by thermal evaporation technique followed by a rapid thermal annealing in an argon atmosphere. From Our XRD analysis, it was revealed that the annealed samples were poly-crystalline and their crystallinity was improved with increasing annealing temperature. The constituent elements and their corresponding chemical states were identified using X-ray photoelectron spectroscopy. The obtained optical band gap of 1.4 eV for CATS thin film is found nearly equal to GaAs - one of the highly efficient thin film material for solar cell technology. Furthermore, our observed good optical absorbance and low transmittance for the annealed CATS thin films in the visible region of light spectrum assured the aptness of the CATS thin films for solar cell applications.

  15. The challenge of crystalline thin film silicon solar cells

    NASA Astrophysics Data System (ADS)

    Werner, J. H.; Bergmann, R.; Brendel, R.

    The high production costs of thick high-efficiency crystalline Si solar cells are inhibiting widespread application of photovoltaic devices, amorphous Si suffers from inherent instability. Thus, crystalline thin film Si may offer a chance for low cost and high efficiency cells. The present contribution reviews the status of thin film Si photovoltaics, which have reached efficiencies of above 17 % with single crystalline films of 50 μm thickness using high-efficiency techniques. We discuss the basic problems which have to be solved in the development of a polycrystalline thin film Si cell. The most challenging problem is to control the nucleation and growth of crystalline Si on foreign substrates. While there are some promising results, mainly based on recrystallization techniques for Si deposition on high temperature substrates such as graphite, deposition at low temperatures is still in a very early stage of investigation. Thin film cells need light trapping; we discuss here the principles and compare experiments with results from our simulation program SUNRAYS. Polycrystalline cells contain grain boundaries which have to be passivated in order to achieve high efficiencies. It seems that liquid phase epitaxy opens a new road to intrinsic physical grain boundary passivation. In the last part of our paper, we demonstrate that the technologies of amorphous Si may be useful for the formation of low-temperature charge separating junctions as well as for surface passivation for efficient cells based on thin film crystalline Si.

  16. Thin film photovoltaic device

    DOEpatents

    Catalano, Anthony W.; Bhushan, Manjul

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  17. Thin film photovoltaic device

    DOEpatents

    Catalano, A.W.; Bhushan, M.

    1982-08-03

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  18. Thin film hydrogen sensor

    DOEpatents

    Lauf, Robert J.; Hoffheins, Barbara S.; Fleming, Pamela H.

    1994-01-01

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

  19. Carbon thin film thermometry

    NASA Technical Reports Server (NTRS)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  20. Analytical and numerical modeling of surface morphologies in thin films

    SciTech Connect

    Genin, F.Y.

    1995-05-01

    Experimental studies have show that strains due to thermal expansion mismatch between a film and its substrate can produce very large stresses in the film that can lead to the formation of holes and hillocks. Based on a phenomenological description of the evolution of a solid surface under both capillary and stress driving forces and for surface and grain boundary self-diffusion, this article provides analytical and numerical solutions for surface profiles of model geometries in polycrystalline thin films. Results can explain a variety of surface morphologies commonly observed experimentally and are discussed to give some practical insights on how to control the growth of holes and hillocks in thin films.

  1. Ferromagnetism in antiferromagnetic NiO-based thin films

    NASA Astrophysics Data System (ADS)

    Lin, Yuan-Hua; Zhan, Bin; Nan, Ce-Wen; Zhao, Rongjuan; Xu, Xiang; Kobayashi, M.

    2011-08-01

    Polycrystalline NiO-based thin films with Li or/and transition metal ions (V, Cr, Mn, Fe, Co, Cu, Zn) doping have been prepared by a sol-gel spin-coating method. Magnetization measurements reveal that V-, Fe-, and Mn-doped NiO thin films show obvious room-temperature ferromagnetic behaviors and ferromagnetic properties can be enhanced by the Li co-doping. Microstructure and X-ray core-level photoemission spectra analysis indicate that the ferromagnetism was not from the impurity TM metal cluster and may be ascribed to double exchange coupling effects via Li-induced holes.

  2. First Thin Film Festival

    NASA Astrophysics Data System (ADS)

    Samson, Philippe

    2005-05-01

    The constant evolution of the satellite market is asking for better technical performances and reliability for a reduced cost. Solar array is in front line of this challenge. This can be achieved by present technologies progressive improvement in cost reduction or by technological breakthrough. To reach an effective End Of Live performance100 W/kg of solar array is not so easy, even if you suppose that the mass of everything is nothing! Thin film cells are potential candidate to contribute to this challenge with certain confidence level and consequent development plan validation and qualification on ground and flight. Based on a strong flight heritage in flexible Solar Array design, the work has allowed in these last years, to pave the way on road map of thin film technologies . This is encouraged by ESA on many technological contracts put in concurrent engineering. CISG was selected cell and their strategy of design, contributions and results will be presented. Trade-off results and Design to Cost solutions will discussed. Main technical drivers, system design constraints, market access, key technologies needed will be detailed in this paper and the resulting road-map and development plan will be presented.

  3. Physics of thin films

    SciTech Connect

    Francombe, M.H. ); Vossen, J.L. )

    1992-01-01

    This book of Physics of Thin Films emphasizes two main technical themes. The first is essentially an extension of the topical thrust on Thin Films for Advance Electronic Devices, developed in Volume 15 of this series. The second deals primarily with the physical and mechanical behavior of films and the influence of these in relation to various applications. The first of the four articles in this volume, by Neelkanth G. Dhere, discusses high-transition-temperature (T{sub c}) superconducting films. Since their discovery in 1986, both world-wide research activity and published literature on high-T{sub c} oxide films have exploded at a phenomenal rate. In his treatment, the author presents an effective survey of the already vast literature on this subject, discusses the numerous techniques under development for the growth of these perovskite-related complex oxides, and describes their key properties and applications. In particular, factors affecting the epitaxial structure, critical current capability, and microwave conductivity in Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O based film compositions are evaluated in relation to their use at 77K. An overview of potential applications in a variety of microwave devices, wide-band optical detectors, SQUID-type high-sensitivity magnetometers, etc., is included.

  4. Thin film mechanics

    NASA Astrophysics Data System (ADS)

    Cooper, Ryan C.

    This doctoral thesis details the methods of determining mechanical properties of two classes of novel thin films suspended two-dimensional crystals and electron beam irradiated microfilms of polydimethylsiloxane (PDMS). Thin films are used in a variety of surface coatings to alter the opto-electronic properties or increase the wear or corrosion resistance and are ideal for micro- and nanoelectromechanical system fabrication. One of the challenges in fabricating thin films is the introduction of strains which can arise due to application techniques, geometrical conformation, or other spurious conditions. Chapters 2-4 focus on two dimensional materials. This is the intrinsic limit of thin films-being constrained to one atomic or molecular unit of thickness. These materials have mechanical, electrical, and optical properties ideal for micro- and nanoelectromechanical systems with truly novel device functionality. As such, the breadth of applications that can benefit from a treatise on two dimensional film mechanics is reason enough for exploration. This study explores the anomylously high strength of two dimensional materials. Furthermore, this work also aims to bridge four main gaps in the understanding of material science: bridging the gap between ab initio calculations and finite element analysis, bridging the gap between ab initio calculations and experimental results, nanoscale to microscale, and microscale to mesoscale. A nonlinear elasticity model is used to determine the necessary elastic constants to define the strain-energy density function for finite strain. Then, ab initio calculations-density functional theory-is used to calculate the nonlinear elastic response. Chapter 2 focuses on validating this methodology with atomic force microscope nanoindentation on molybdenum disulfide. Chapter 3 explores the convergence criteria of three density functional theory solvers to further verify the numerical calculations. Chapter 4 then uses this model to investigate

  5. Conventional X-ray fluorescence camera with a cadmium-telluride detector and its application to cancer diagnosis

    NASA Astrophysics Data System (ADS)

    Enomoto, Toshiyuki; Sato, Eiichi; Abderyim, Purkhet; Abudurexiti, Abulajiang; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Watanabe, Manabu; Nagao, Jiro; Sato, Shigehiro; Ogawa, Akira; Onagawa, Jun

    2011-04-01

    X-ray fluorescence (XRF) analysis is useful for mapping various molecules in objects. Bremsstrahlung X-rays are selected using a 3.0-mm-thick aluminum filter, and these rays are absorbed by iodine, cerium, and gadolinium molecules in objects. Next, XRF is produced from the objects, and photons are detected by a cadmium-telluride detector. The Kα photons are discriminated using a multichannel analyzer, and the number of photons is counted by a counter card. The objects are moved and scanned by an x- y stage in conjunction with a two-stage controller, and X-ray images obtained by molecular mapping are shown on a personal computer monitor. The scan steps of x and y axes were both 2.5 mm, and the photon-counting time per mapping point was 0.5 s. We carried out molecular mapping using the X-ray camera, and Kα photons from cerium and gadolinium molecules were produced from cancerous regions in nude mice.

  6. A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors

    NASA Astrophysics Data System (ADS)

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Guo, Dongming; Kang, Renke; Zhang, Bi

    2016-03-01

    A novel approach of chemical mechanical polishing (CMP) is developed for mercury cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water. Secondly, the MCT wafers are polished using the developed CMP slurry. The CMP slurry consists of mainly SiO2 nanospheres, H2O2, and malic and citric acids, which are different from previous CMP slurries, in which corrosive and toxic chemical reagents are usually employed. Finally, the polished MCT wafers are cleaned and dried by deionized water and compressed air, respectively. The novel approach of CMP is environment-friendly. Surface roughness Ra, and peak-to-valley (PV) values of 0.45, and 4.74 nm are achieved, respectively on MCT wafers after CMP. The first and second passivating processes are observed in electrochemical measurements on MCT wafers. The fundamental mechanisms of CMP are proposed according to the X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Malic and citric acids dominate the first passivating process, and the CMP slurry governs the second process. Te4+3d peaks are absent after CMP induced by the developed CMP slurry, indicating the removing of oxidized films on MCT wafers, which is difficult to achieve using single H2O2 and malic and citric acids solutions.

  7. A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors.

    PubMed

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Guo, Dongming; Kang, Renke; Zhang, Bi

    2016-03-01

    A novel approach of chemical mechanical polishing (CMP) is developed for mercury cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water. Secondly, the MCT wafers are polished using the developed CMP slurry. The CMP slurry consists of mainly SiO2 nanospheres, H2O2, and malic and citric acids, which are different from previous CMP slurries, in which corrosive and toxic chemical reagents are usually employed. Finally, the polished MCT wafers are cleaned and dried by deionized water and compressed air, respectively. The novel approach of CMP is environment-friendly. Surface roughness Ra, and peak-to-valley (PV) values of 0.45, and 4.74 nm are achieved, respectively on MCT wafers after CMP. The first and second passivating processes are observed in electrochemical measurements on MCT wafers. The fundamental mechanisms of CMP are proposed according to the X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Malic and citric acids dominate the first passivating process, and the CMP slurry governs the second process. Te(4+)3d peaks are absent after CMP induced by the developed CMP slurry, indicating the removing of oxidized films on MCT wafers, which is difficult to achieve using single H2O2 and malic and citric acids solutions.

  8. Liver Toxicity of Cadmium Telluride Quantum Dots (CdTe QDs) Due to Oxidative Stress in Vitro and in Vivo

    PubMed Central

    Zhang, Ting; Hu, Yuanyuan; Tang, Meng; Kong, Lu; Ying, Jiali; Wu, Tianshu; Xue, Yuying; Pu, Yuepu

    2015-01-01

    With the applications of quantum dots (QDs) expanding, many studies have described the potential adverse effects of QDs, yet little attention has been paid to potential toxicity of QDs in the liver. The aim of this study was to investigate the effects of cadmium telluride (CdTe) QDs in mice and murine hepatoma cells alpha mouse liver 12 (AML 12). CdTe QDs administration significantly increased the level of lipid peroxides marker malondialdehyde (MDA) in the livers of treated mice. Furthermore, CdTe QDs caused cytotoxicity in AML 12 cells in a dose- and time-dependent manner, which was likely mediated through the generation of reactive oxygen species (ROS) and the induction of apoptosis. An increase in ROS generation with a concomitant increase in the gene expression of the tumor suppressor gene p53, the pro-apoptotic gene Bcl-2 and a decrease in the anti-apoptosis gene Bax, suggested that a mitochondria mediated pathway was involved in CdTe QDs’ induced apoptosis. Finally, we showed that NF-E2-related factor 2 (Nrf2) deficiency blocked induced oxidative stress to protect cells from injury induced by CdTe QDs. These findings provide insights into the regulatory mechanisms involved in the activation of Nrf2 signaling that confers protection against CdTe QDs-induced apoptosis in hepatocytes. PMID:26404244

  9. A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors

    PubMed Central

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Guo, Dongming; Kang, Renke; Zhang, Bi

    2016-01-01

    A novel approach of chemical mechanical polishing (CMP) is developed for mercury cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water. Secondly, the MCT wafers are polished using the developed CMP slurry. The CMP slurry consists of mainly SiO2 nanospheres, H2O2, and malic and citric acids, which are different from previous CMP slurries, in which corrosive and toxic chemical reagents are usually employed. Finally, the polished MCT wafers are cleaned and dried by deionized water and compressed air, respectively. The novel approach of CMP is environment-friendly. Surface roughness Ra, and peak-to-valley (PV) values of 0.45, and 4.74 nm are achieved, respectively on MCT wafers after CMP. The first and second passivating processes are observed in electrochemical measurements on MCT wafers. The fundamental mechanisms of CMP are proposed according to the X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Malic and citric acids dominate the first passivating process, and the CMP slurry governs the second process. Te4+3d peaks are absent after CMP induced by the developed CMP slurry, indicating the removing of oxidized films on MCT wafers, which is difficult to achieve using single H2O2 and malic and citric acids solutions. PMID:26926622

  10. D-penicillamine capped cadmium telluride quantum dots as a novel fluorometric sensor of copper(II).

    PubMed

    Mohammad-Rezaei, Rahim; Razmi, Habib; Abdolmohammad-Zadeh, Hossein

    2013-01-01

    D-penicillamine-capped cadmium telluride quantum dots (DPA-capped CdTe QDs) were synthesized as the new fluorescent semiconductor nanocrystal in aqueous solution. Fourier transmission infrared spectroscopy, X-ray diffraction, transmission electron microscopy, ultraviolet-visible and photoluminescence spectroscopy were used for characterization of the QDs. Based on the quenching effect of Cu(2+) ions on the fluorescence intensity of DPA-capped CdTe QDs, a new fluorometric sensor for copper(II) detection was developed that showed good linearity over the concentration range 5 × 10(-9)-3 × 10(-6) M with the detection limit 0.4 × 10(-9) M. Owing to the strong affinity of the DPA to copper(II), the sensor showed appropriate selectivity for copper(II) compared with conventional QDs. The DPA-capped CdTe QDs was successfully applied for determination of Cu(2+) concentration in river, well and tap waters with satisfactory results.

  11. Thin Film Inorganic Electrochemical Systems.

    DTIC Science & Technology

    1995-07-01

    determined that thin film cathodes of LiCoO2 can be readily performed by either spray pyrolysis or spin coating . These cathodes are electrochemically...active. We have also determined that thin film anodes of Li4Ti5O12 can be prepared by spray pyrolysis or spin coating . These anodes are also

  12. Magnetochromatic thin-film microplates.

    PubMed

    He, Le; Janner, Michael; Lu, Qipeng; Wang, Mingsheng; Ma, Hua; Yin, Yadong

    2015-01-07

    A new type of magnetochromatic material is developed based on thin-film interference of microplates self-assembled from super-paramagnetic nanocrystals. Dynamic optical tuning can be achieved through orientational manipulation of free-standing super-paramagnetic thin-film microplates using external magnetic fields.

  13. Methods of Producing Thin Films,

    DTIC Science & Technology

    The report describes various methods of producing thin films , especially for microelectronics. In addition to the classical methods of forming thin ... films by vacuum vapor deposition, it also describes processes of diode sputtering and modern methods of cathode sputtering by means of a third

  14. Thin film ion conducting coating

    DOEpatents

    Goldner, Ronald B.; Haas, Terry; Wong, Kwok-Keung; Seward, George

    1989-01-01

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  15. Thin-film transistors based on p-type Cu{sub 2}O thin films produced at room temperature

    SciTech Connect

    Fortunato, Elvira; Figueiredo, Vitor; Barquinha, Pedro; Elamurugu, Elangovan; Goncalves, Goncalo; Martins, Rodrigo; Park, Sang-Hee Ko; Hwang, Chi-Sun

    2010-05-10

    Copper oxide (Cu{sub 2}O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu{sub 2}O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm{sup 2}/V s and an on/off ratio of 2x10{sup 2}.

  16. Cu(In, Ga)Se2 thin film solar cells grown at low temperatures

    NASA Astrophysics Data System (ADS)

    Zhang, W.; Zhu, H.; Zhang, L.; Guo, Y.; Niu, X.; Li, Z.; Chen, J.; Liu, Q.; Mai, Y.

    2017-06-01

    Cu(In, Ga)Se2 (CIGS) thin film solar cells were grown on polyimide (PI) and soda lime glass (SLG) substrates at low substrate temperatures between 400 °C and 500 °C. Different material properties of the CIGS thin films and photovoltaic performances of the solar cells were systematically investigated. It is found that the (112), (220)/(204) and (116)/(312) peaks from X-ray diffraction (XRD) patterns show double-peak patterns as the substrate temperature decreases. The CIGS thin films grown on both PI and SLG substrates shows layered structures. The bottom and surficial layers of CIGS thin films display small size polycrystalline grains while the middle layers show large size polycrystalline grains. Both types of CIGS thin film solar cells exhibit similar efficiencies while CIGS thin film solar cells grown on PI substrates show lower open circuit voltage and fill factor but higher short circuit current density, as compared to those of CIGS thin film solar cells on SLG substrates. The highest efficiency of 6.14% has been achieved for the CIGS thin film solar cells on PI with the structure of PI/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Al grid here.

  17. Analysis of advanced vapor source for cadmium telluride solar cell manufacturing

    NASA Astrophysics Data System (ADS)

    Khetani, Tejas Harshadkumar

    A thin film CdS/CdTe solar cell manufacturing line has been developed in the Materials Engineering Laboratory at Colorado State University. The original design incorporated infrared lamps for heating the vapor source. This system has been redesigned to improve the energy efficiency of the system, allow co-sublimation and allow longer run time before the sources have to be replenished. The advanced vapor source incorporates conduction heating with heating elements embedded in graphite. The advanced vapor source was modeled by computational fluid dynamics (CFD). From these models, the required maximum operating temperature of the element was determined to be 720 C for the processing of CdS/CdTe solar cells. Nichrome and Kanthal A1 were primarily selected for this application at temperature of 720 °C in vacuum with oxygen partial pressure. Research on oxidation effects and life due to oxidation as well as creep deformation was done, and Nichrome was found more suitable for this application. A study of the life of the Nichrome heating elements in this application was conducted and the estimate of life is approximately 1900 years for repeated on-off application. This is many orders of magnitude higher than the life of infrared heat lamps. Ceramic cement based on aluminum oxide (Resbond 920) is used for bonding the elements to the graphite. Thermodynamic calculations showed that this cement is inert to the heating element. An earlier design of the advanced source encountered failure of the element. The failed element was studies by scanning electron microscopy and the failure was attributed to loss of adhesion between the graphite and the ceramic element. The design has been modified and the advanced vapor source is currently in operation.

  18. Ferromagnetic thin films

    DOEpatents

    Krishnan, K.M.

    1994-12-20

    A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

  19. Polyimide Aerogel Thin Films

    NASA Technical Reports Server (NTRS)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  20. Thin film hydrogen sensor

    DOEpatents

    Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

    1994-11-22

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

  1. Ferromagnetic thin films

    DOEpatents

    Krishnan, Kannan M.

    1994-01-01

    A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.

  2. Composite Thin Films

    SciTech Connect

    Martin, Peter M.

    2003-02-01

    Composites are one of more versatile types of materials, and can be characterized as multicomponent, or multiphase, mixtures. They can have unique structural, optical, electrical and magnetic properties not possible with a simple single component material. One of the best known composite materials is fiberglass, which is composed of glass fibers in a polymer matrix. This family of materials and thin films is highly disordered and inhomogeneous on a microstructural scale. Nanocrystalline and nanoclusters are now actively being investigated. The inhomogeneities can be fibers, clusters of atoms or molecules, grains with different crystalline phases (nanocrystalline clusters), inclusions with different electrical and magnetic properties. Note that the particles can have the same composition as the host material, but will have a different structural geometry. Carbon-carbon composites are a good example, where carbon fibers or threads are incorporated into carbonaceous resin

  3. Holographic thin film analyzer

    NASA Technical Reports Server (NTRS)

    Williams, J. R.; Norden, B. N. (Inventor)

    1973-01-01

    A system for the analysis and measurement of thin films in which the light output of a laser is split into two beams is discribed. The first beam is focused to illuminate the entire area of a photographic plate and the second beam is colummated and directed through a relatively small portion of the photographic plate onto the sample with the film to be observed. The surface of the sample is positioned at a slight angle with respect to a plane normal to the second beam and the light reflected from the sample arrives back at the photographic plate in a region other than through which the second beam originally passes. By making two successive exposures during the deposition of material on the surface of the sample, holograms are recorded on the photographic plate. The plate is then developed and interference lines of the hologram provide a measurement of the film or material deposited between exposure.

  4. Selective inorganic thin films

    SciTech Connect

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T.

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  5. Recent progress in Si thin film technology for solar cells

    NASA Astrophysics Data System (ADS)

    Kuwano, Yukinori; Nakano, Shoichi; Tsuda, Shinya

    1991-11-01

    Progress in Si thin film technology 'specifically amorphous Si (a-Si) and polycrystalline Si (poly-Si) thin film' for solar cells is summarized here from fabrication method, material, and structural viewpoints. In addition to a-Si, primary results on poly-Si thin film research are discussed. Various applications for a-Si solar cells are mentioned, and consumer applications and a-Si solar cell photovoltaic systems are introduced. New product developments include see-through solar cells, solar cell roofing tiles, and ultra-light flexible solar cells. As for new systems, air conditioning equipment powered by solar cells is described. Looking to the future, the proposed GENESIS project is discussed.

  6. Single Source Precursors for Thin Film Solar Cells

    NASA Technical Reports Server (NTRS)

    Banger, Kulbinder K.; Hollingsworth, Jennifer A.; Harris, Jerry D.; Cowen, Jonathan; Buhro, William E.; Hepp, Aloysius F.

    2002-01-01

    The development of thin film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power, (W/kg). The use of a polycrystalline chalcopyrite absorber layer for thin film solar cells is considered as the next generation photovoltaic devices. At NASA GRC we have focused on the development of new single source precursors (SSP) and their utility to deposit the chalcopyrite semi-conducting layer (CIS) onto flexible substrates for solar cell fabrication. The syntheses and thermal modulation of SSPs via molecular engineering is described. Thin-film fabrication studies demonstrate the SSPs can be used in a spray CVD (chemical vapor deposition) process, for depositing CIS at reduced temperatures, which display good electrical properties, suitable for PV (photovoltaic) devices.

  7. Structural and Optical Properties of Nanoscale Galinobisuitite Thin Films

    PubMed Central

    Abd-Elkader, Omar H.; Deraz, N. M.

    2014-01-01

    Galinobisuitite thin films of (Bi2S3)(PbS) were prepared using the chemical bath deposition technique (CBD). Thin films were prepared by a modified chemical deposition process by allowing the triethanolamine (TEA) complex of Bi3+ and Pb2+ to react with S2− ions, which are released slowly by the dissociation of the thiourea (TU) solution. The films are polycrystalline and the average crystallite size is 35 nm. The composition of the films was measured using the atomic absorption spectroscopy (AAS) technique. The films are very adherent to the substrates. The crystal structure of Galinobisuitite thin films was calculated by using the X-ray diffraction (XRD) technique. The surface morphology and roughness of the films were studied using scanning electron microscopes (SEM), transmission electron microscopes (TEM) and stylus profilers respectively. The optical band gaps of the films were estimated from optical measurements. PMID:24473136

  8. A versatile platform for magnetostriction measurements in thin films

    NASA Astrophysics Data System (ADS)

    Pernpeintner, M.; Holländer, R. B.; Seitner, M. J.; Weig, E. M.; Gross, R.; Goennenwein, S. T. B.; Huebl, H.

    2016-03-01

    We present a versatile nanomechanical sensing platform for the investigation of magnetostriction in thin films. It is based on a doubly clamped silicon nitride nanobeam resonator covered with a thin magnetostrictive film. Changing the magnetization direction within the film plane by an applied magnetic field generates a magnetoelastic stress and thus changes the resonance frequency of the nanobeam. A measurement of the resulting resonance frequency shift, e.g., by optical interferometry, allows to quantitatively determine the magnetostriction constants of the thin film. In a proof-of-principle experiment, we determine the magnetostriction constants of a 10 nm thick polycrystalline cobalt film, showing very good agreement with literature values. The presented technique aims, in particular, for the precise measurement of magnetostriction in a variety of (conducting and insulating) thin films, which can be deposited by, e.g., electron beam deposition, thermal evaporation, or sputtering.

  9. Growth and characterization of organic ferroelectric croconic acid thin films

    NASA Astrophysics Data System (ADS)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Enders, Axel; Gruverman, Alexei; Xu, Xiaoshan

    Using vapor phase evaporation, we have studied the growth of the croconic acid (CCA) thin films, at various conditions such as temperature, thickness, growth speed, and substrates. The morphology of thin film was measured by atomic force microscopy (AFM); the ferroelectric property was confirmed by piezoresponse force microscopy (PFM). A critical thickness of 40 nm and optimal temperature of -30 celsius were found for continuous films, while the substrate and growth speed are found to play a minimal role. According to the reflection high energy electron diffraction (RHEED), the CCA films are polycrystalline. For a 40 nm continuous film, the roughness is about 3 nm, while the coercive voltage for the ferroelectric domain switching is approximately 7V. This is the first molecule ferroelectric thin film. The successful growth of continuous CCA films enhances the applications potential of CCA, which is a molecular crystal of ferroelectricity. Supported by NSF through UNL MRSEC (DMR-1420645).

  10. Structural and optical properties of nanoscale Galinobisuitite thin films.

    PubMed

    Abd-Elkader, Omar H; Deraz, N M

    2014-01-27

    Galinobisuitite thin films of (Bi2S3)(PbS) were prepared using the chemical bath deposition technique (CBD). Thin films were prepared by a modified chemical deposition process by allowing the triethanolamine (TEA) complex of Bi(3+) and Pb(2+) to react with S(2)- ions, which are released slowly by the dissociation of the thiourea (TU) solution. The films are polycrystalline and the average crystallite size is 35 nm. The composition of the films was measured using the atomic absorption spectroscopy (AAS) technique. The films are very adherent to the substrates. The crystal structure of Galinobisuitite thin films was calculated by using the X-ray diffraction (XRD) technique. The surface morphology and roughness of the films were studied using scanning electron microscopes (SEM), transmission electron microscopes (TEM) and stylus profilers respectively. The optical band gaps of the films were estimated from optical measurements.

  11. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  12. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  13. Design and optimization of large area thin-film CdTe detector for radiation therapy imaging applications

    SciTech Connect

    Parsai, E. Ishmael; Shvydka, Diana; Kang, Jun

    2010-08-15

    Purpose: The authors investigate performance of thin-film cadmium telluride (CdTe) in detecting high-energy (6 MV) x rays. The utilization of this material has become technologically feasible only in recent years due to significant development in large area photovoltaic applications. Methods: The CdTe film is combined with a metal plate, facilitating conversion of incoming photons into secondary electrons. The system modeling is based on the Monte Carlo simulations performed to determine the optimized CdTe layer thickness in combination with various converter materials. Results: The authors establish a range of optimal parameters producing the highest DQE due to energy absorption, as well as signal and noise spatial spreading. The authors also analyze the influence of the patient scatter on image formation for a set of detector configurations. The results of absorbed energy simulation are used in device operation modeling to predict the detector output signal. Finally, the authors verify modeling results experimentally for the lowest considered device thickness. Conclusions: The proposed CdTe-based large area thin-film detector has a potential of becoming an efficient low-cost electronic portal imaging device for radiation therapy applications.

  14. Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

    PubMed Central

    Gutiérrez-Lazos, Claudio Davet; Ortega-López, Mauricio; Pérez-Guzmán, Manuel A; Espinoza-Rivas, A Mauricio; Solís-Pomar, Francisco; Ortega-Amaya, Rebeca; Silva-Vidaurri, L Gerardo; Castro-Peña, Virginia C

    2014-01-01

    Summary This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC) synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis indicates that the CdTe-NC have a nearly spherical shape (3.5 nm as mean size). Electron diffraction and XRD diffraction analyses indicated the bulk-CdTe face-centered cubic structure for CdTe-NC. An additional diffraction line corresponding to the octahedral Cd3P2 was also detected as a secondary phase, which probably originates by reacting free cadmium ions with trioctylphosphine (the tellurium reducing agent). The Raman spectrum exhibits two broad bands centered at 141.6 and 162.3 cm−1, which could be associated to the TO and LO modes of cubic CdTe nanocrystals, respectively. Additional peaks located in the 222 to 324 cm−1 range, agree fairly well with the wavenumbers reported for TO modes of octahedral Cd3P2. PMID:24991525

  15. Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing.

    PubMed

    Gutiérrez-Lazos, Claudio Davet; Ortega-López, Mauricio; Pérez-Guzmán, Manuel A; Espinoza-Rivas, A Mauricio; Solís-Pomar, Francisco; Ortega-Amaya, Rebeca; Silva-Vidaurri, L Gerardo; Castro-Peña, Virginia C; Pérez-Tijerina, Eduardo

    2014-01-01

    This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC) synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis indicates that the CdTe-NC have a nearly spherical shape (3.5 nm as mean size). Electron diffraction and XRD diffraction analyses indicated the bulk-CdTe face-centered cubic structure for CdTe-NC. An additional diffraction line corresponding to the octahedral Cd3P2 was also detected as a secondary phase, which probably originates by reacting free cadmium ions with trioctylphosphine (the tellurium reducing agent). The Raman spectrum exhibits two broad bands centered at 141.6 and 162.3 cm(-1), which could be associated to the TO and LO modes of cubic CdTe nanocrystals, respectively. Additional peaks located in the 222 to 324 cm(-1) range, agree fairly well with the wavenumbers reported for TO modes of octahedral Cd3P2.

  16. Host thin films incorporating nanoparticles

    NASA Astrophysics Data System (ADS)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  17. Radio-frequency magnetron triode sputtering of cadmium telluride and zinc telluride films and solar cells

    NASA Astrophysics Data System (ADS)

    Sanford, Adam Lee

    The n-CdS/p-CdTe solar cell has been researched for many years now. Research groups use a variety of processes to fabricate thin-film CdS/CdTe cells, including physical vapor deposition, chemical vapor deposition, and RF diode sputtering. One of the central areas of investigation concerning CdS/CdTe cells is the problem of a Schottky barrier at the back contact. Even cells fabricated with ohmic back contacts degrade into Schottky barriers as the devices are used. This severely degrades power generation. One possible solution is to use p+-ZnTe as an interlayer between CdTe and the back contact. ZnTe is easily doped with Cu to be p-type. However, even contacts with this ZnTe interlayer degrade over time, because Cu is highly mobile and diffuses away from the contact towards the CdS/CdTe junction. Another possibility is to dope ZnTe with N. It has been demonstrated using molecular beam epitaxy and RF diode sputtering. In this study, CdTe films are fabricated using a variation of RF diode sputtering called triode sputtering. This technique allows for control of ion bombardment to the substrate during deposition. Also, a higher plasma density near the target is achieved allowing depositions at lower pressures. These films are characterized structurally to show the effects of the various deposition parameters. N-doped ZnTe films are also fabricated using this technique. These films are characterized electrically to show the effects of the various deposition parameters. Also, the effects of post-deposition annealing are observed. It is found that annealing at the right temperature can increase the conductivity of the films by a factor of 3 or more. However, annealing at higher temperatures decreases the conductivity to as low as 12% of the initial conductivity. Finally, RF triode sputtered N-doped ZnTe films are used as an interlayer at the back contact of a CdS/CdTe solar cell. The effects of annealing the device before and after contact deposition are observed

  18. Center for Thin Film Studies

    DTIC Science & Technology

    1991-01-22

    Properties of Hafnium Dioxide Thin Films Appendix C Cross Sections for 170.50 Backscattering of 4He from Oxygen for ’He Energies Between 1.8 and 5.0 MeV...microstructural properties of hafnium dioxide thin films J. P. Lehan, Y. Mao, B. G. Bovard, and H. A. Macleod Summary We have applied a variety of analytical...tools to educe the compositional and morphological changes experienced by thin films of hafnium dioxide deposited under a variety of conditions. Surface

  19. Altering properties of cerium oxide thin films by Rh doping

    SciTech Connect

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír; and others

    2015-07-15

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

  20. Damage in Monolithic Thin-Film Photovoltaic Modules Due to Partial Shade

    SciTech Connect

    Silverman, Timothy J.; Mansfield, Lorelle; Repins, Ingrid; Kurtz, Sarah

    2016-09-01

    The typical configuration of monolithic thin-film photovoltaic modules makes it possible for partial shade to place one or more cells in such a module in reverse bias. Reverse bias operation leads to high voltage, current density, and power density conditions, which can act as driving forces for failure. We showed that a brief outdoor shadow event can cause a 7% permanent loss in power. We applied an indoor partial shade durability test that moves beyond the standard hot spot endurance test by using more realistic mask and bias conditions and by carefully quantifying the permanent change in performance due to the stress. With the addition of a pass criterion based on change in maximum power, this procedure will soon be proposed as a part of the module-type qualification test. All six commercial copper indium gallium diselenide and cadmium telluride modules we tested experienced permanent damage due to the indoor partial shade test, ranging from 4% to 14% loss in maximum power. We conclude by summarizing ways to mitigate partial shade stress at the cell, module, and system levels.