Growth of carbon nanotubes by Fe-catalyzed chemical vapor processes on silicon-based substrates

NASA Astrophysics Data System (ADS)

Angelucci, Renato; Rizzoli, Rita; Vinciguerra, Vincenzo; Fortuna Bevilacqua, Maria; Guerri, Sergio; Corticelli, Franco; Passini, Mara

2007-03-01

In this paper, a site-selective catalytic chemical vapor deposition synthesis of carbon nanotubes on silicon-based substrates has been developed in order to get horizontally oriented nanotubes for field effect transistors and other electronic devices. Properly micro-fabricated silicon oxide and polysilicon structures have been used as substrates. Iron nanoparticles have been obtained both from a thin Fe film evaporated by e-gun and from iron nitrate solutions accurately dispersed on the substrates. Single-walled nanotubes with diameters as small as 1 nm, bridging polysilicon and silicon dioxide “pillars”, have been grown. The morphology and structure of CNTs have been characterized by SEM, AFM and Raman spectroscopy.

Integrating carbon nanotube forests into polysilicon MEMS: Growth kinetics, mechanisms, and adhesion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ubnoske, Stephen M.; Radauscher, Erich J.; Meshot, Eric R.

The growth of carbon nanotubes (CNTs) on polycrystalline silicon substrates was studied to improve the design of CNT field emission sources for microelectromechanical systems (MEMS) applications and vacuum microelectronic devices (VMDs). Microwave plasma-enhanced chemical vapor deposition (PECVD) was used for CNT growth, resulting in CNTs that incorporate the catalyst particle at their base. The kinetics of CNT growth on polysilicon were compared to growth on Si (100) using the model of Deal and Grove, finding activation energies of 1.61 and 1.54 eV for the nucleation phase of growth and 1.90 and 3.69 eV for the diffusion-limited phase on Si (100)more » and polysilicon, respectively. Diffusivity values for growth on polysilicon were notably lower than the corresponding values on Si (100) and the growth process became diffusion-limited earlier. Evidence favors a surface diffusion growth mechanism involving diffusion of carbon precursor species along the length of the CNT forest to the catalyst at the base. Explanations for the differences in activation energies and diffusivities were elucidated by SEM analysis of the catalyst nanoparticle arrays and through wide-angle X-ray scattering (WAXS) of CNT forests. As a result, methods are presented to improve adhesion of CNT films during operation as field emitters, resulting in a 2.5× improvement.« less

Integrating carbon nanotube forests into polysilicon MEMS: Growth kinetics, mechanisms, and adhesion

DOE PAGES

Ubnoske, Stephen M.; Radauscher, Erich J.; Meshot, Eric R.; ...

2016-11-19

The growth of carbon nanotubes (CNTs) on polycrystalline silicon substrates was studied to improve the design of CNT field emission sources for microelectromechanical systems (MEMS) applications and vacuum microelectronic devices (VMDs). Microwave plasma-enhanced chemical vapor deposition (PECVD) was used for CNT growth, resulting in CNTs that incorporate the catalyst particle at their base. The kinetics of CNT growth on polysilicon were compared to growth on Si (100) using the model of Deal and Grove, finding activation energies of 1.61 and 1.54 eV for the nucleation phase of growth and 1.90 and 3.69 eV for the diffusion-limited phase on Si (100)more » and polysilicon, respectively. Diffusivity values for growth on polysilicon were notably lower than the corresponding values on Si (100) and the growth process became diffusion-limited earlier. Evidence favors a surface diffusion growth mechanism involving diffusion of carbon precursor species along the length of the CNT forest to the catalyst at the base. Explanations for the differences in activation energies and diffusivities were elucidated by SEM analysis of the catalyst nanoparticle arrays and through wide-angle X-ray scattering (WAXS) of CNT forests. As a result, methods are presented to improve adhesion of CNT films during operation as field emitters, resulting in a 2.5× improvement.« less

ISITE: Automatic Circuit Synthesis for Double-Metal CMOS VLSI (Very Large Scale Integrated) Circuits

DTIC Science & Technology

1989-12-01

rows and columns should be minimized. There are two methodologies for achieving this objective, namely, logic minimization to I I I 15 I A B C D E T...type and N-type polysilicon (Figure 2.5( b )) and interconnecting the gates with metal at a later I processing step. The two layers of aluminum available...polysiliconI ...... .. ... .. .. . .. ... .. ... .. I N polysilicon Iii~~iiiiiiii~~iiiiii (a) ( b ) 3 Figure 2.5. Controlling the Threshold Voltage in

Economics of polysilicon process: A view from Japan

NASA Technical Reports Server (NTRS)

Shimizu, Y.

1986-01-01

The production process of solar grade silicon (SOG-Si) through trichlorosilane (TCS) was researched in a program sponsored by New Energy Development Organization (NEDO). The NEDO process consists of the following two steps: TCS production from by-product silicon tetrachloride (STC) and SOG-Si formation from TCS using a fluidized bed reactor. Based on the data obtained during the research program, the manufacturing cost of the NEDO process and other polysilicon manufacturing processes were compared. The manufacturing cost was calculated on the basis of 1000 tons/year production. The cost estimate showed that the cost of producing silicon by all of the new processes is less than the cost by the conventional Siemens process. Using a new process, the cost of producing semiconductor grade silicon was found to be virtually the same with any to the TCS, diclorosilane, and monosilane processes when by-products were recycled. The SOG-Si manufacturing processes using the fluidized bed reactor, which needs further development, shows a greater probablility of cost reduction than the filament processes.

Fabricating micro-instruments in surface-micromachined polycrystalline silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Comtois, J.H.; Michalicek, M.A.; Barron, C.C.

1997-04-01

Smaller, lighter instruments can be fabricated as Micro-Electro-Mechanical Systems (MEMS), having micron scale moving parts packaged together with associated control and measurement electronics. Batch fabrication of these devices will make economical applications such as condition-based machine maintenance and remote sensing. The choice of instrumentation is limited only by the designer`s imagination. This paper presents one genre of MEMS fabrication, surface-micromachined polycrystalline silicon (polysilicon). Two currently available but slightly different polysilicon processes are presented. One is the ARPA-sponsored ``Multi-User MEMS ProcesS`` (MUMPS), available commercially through MCNC; the other is the Sandia National Laboratories ``Sandia Ultra-planar Multilevel MEMS Technology`` (SUMMiT). Example componentsmore » created in both processes will be presented, with an emphasis on actuators, actuator force testing instruments, and incorporating actuators into larger instruments.« less

Numerical Simulation of Polysilicon Solid-liquid Interface Transmogrification in Heat Transfer Process

NASA Astrophysics Data System (ADS)

Yang, Xi; Ma, Wenhui; Lv, Guoqiang; Zhang, Mingyu

2018-01-01

The shape of solid-liquid interface during the directional solidification process, which is difficult to be observed and measured in actual processes, controls the grain orientation and grain size of polysilicon ingot. We carried out numerical calculations of the directional solidification progress of polycrystalline silicon and invested the means to deal with the latent heat of solidification in numerical simulation. The distributions of the temperature field of the melt for the crystallization progress as well as the transformation of the solid-liquid interface were obtained. The simulation results are consistent with the experimental outcomes. The results show that the curvature of solid-liquid interface is small and stability, larger grain sized columnar crystal can be grown in the laboratory-scale furnace at a solidification rate of 10 μm•s-1. It shall provide important theoretical basis for metallurgical process and polysilicon production technology.

Control of polysilicon on-film particulates with on-product measurements

NASA Astrophysics Data System (ADS)

Barker, Judith B.; Chain, Elizabeth E.; Plachecki, Vincent E.

1997-08-01

Historically, a number of in-line particle measurements have been performed on separate test wafers included with product wafers during polysilicon processes. By performing film thickness and particulate measurements directly on product wafers, instead, a number of benefits accrue: (1) reduced test wafer usage, (2) reduced test wafer storage requirements, (3) reduced need for equipment to reclaim test wafers, (4) reduced need for direct labor to reclaim test wafers, and (5) reduced engineering 'false alarms' due to incorrectly processed test wafers. Implementation of on-product measurements for the polysilicon diffusion process required a number of changes in both philosophy and methodology. We show the necessary steps to implementation of on-product particle measurements with concern for overall manufacturing efficiency and the need to maintain appropriate control. Particle results from the Tencor 7600 Surfscan are presented.

Formation of a Polycrystalline Silicon Thin Film by Using Blue Laser Diode Annealing

NASA Astrophysics Data System (ADS)

Choi, Young-Hwan; Ryu, Han-Youl

2018-04-01

We report the crystallization of an amorphous silicon thin film deposited on a SiO2/Si wafer using an annealing process with a high-power blue laser diode (LD). The laser annealing process was performed using a continuous-wave blue LD of 450 nm in wavelength with varying laser output power in a nitrogen atmosphere. The crystallinity of the annealed poly-silicon films was investigated using ellipsometry, electron microscope observation, X-ray diffraction, and Raman spectroscopy. Polysilicon grains with > 100-nm diameter were observed to be formed after the blue LD annealing. The crystal quality was found to be improved as the laser power was increased up to 4 W. The demonstrated blue LD annealing is expected to provide a low-cost and versatile solution for lowtemperature poly-silicon processes.

Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices

NASA Astrophysics Data System (ADS)

Shaneyfelt, M. R.; Schwank, J. R.; Fleetwood, D. M.; Winokur, P. S.; Hughes, K. L.

1990-12-01

The electric field dependence of radiation-induced oxide- and interface-trap charge (Delta Vot and Delta Vit) generation for polysilicon- and metal-gate MOS transistors is investigated at electric fields (Eox) from -4.2 MV/cm to +4.7 MV/cm. If electron-hole recombination effects are taken into account, the absolute value of Delta Vot and the saturated value of Delta Vit for both polysilicon- and metal-gate transistors are shown to follow an approximate E exp -1/2 field dependence for Eox = 0.4 MV/cm or greater. An E exp -1/2 dependence for the saturated value of Delta Vit was also observed for negative-bias irradiation followed by a constant positive-bias anneal. The E exp -1/2 field dependence observed suggests that the total number of interface traps created in these devices may be determined by hole trapping near the Si/SiO2 interface for positive-bias irradiation or near the gate/SiO2 interface for negative bias irradiation, though H+ drift remains the likely rate-limiting step in the process. Based on these results, a hole-trapping/hydrogen transport model-involving hole trapping and subsequent near-interfacial H+ release, transport, and reaction at the interface-is proposed as a possible explanation of Delta Vit buildup in these polysilicon- and metal-gate transistors.

Optical properties of micromachined polysilicon reflective surfaces with etching holes

NASA Astrophysics Data System (ADS)

Zou, Jun; Byrne, Colin; Liu, Chang; Brady, David J.

1998-08-01

MUMPS (Multi-User MEMS Process) is receiving increasingly wide use in micro optics. We have investigated the optical properties of the polysilicon reflective surface in a typical MUMPS chip within the visible light spectrum. The effect of etching holes on the reflected laser beam is studied. The reflectivity and diffraction patterns at five different wavelengths have been measured. The optical properties of the polysilicon reflective surface are greatly affected by the surface roughness, the etching holes, as well as the material. The etching holes contribute to diffraction and reduction of reflectivity. This study provides a basis for optimal design of micromachined free-space optical systems.

Micro-electro-optical devices in a five-level polysilicon surface-micromachining technology

NASA Astrophysics Data System (ADS)

Smith, James H.; Rodgers, M. Steven; Sniegowski, Jeffry J.; Miller, Samuel L.; Hetherington, Dale L.; McWhorter, Paul J.; Warren, Mial E.

1998-09-01

We recently reported on the development of a 5-level polysilicon surface micromachine fabrication process consisting of four levels of mechanical poly plus an electrical interconnect layer and its application to complex mechanical systems. This paper describes the application of this technology to create micro-optical systems-on-a-chip. These are demonstration systems, which show that give levels of polysilicon provide greater performance, reliability, and significantly increased functionality. This new technology makes it possible to realize levels of system complexity that have so far only existed on paper, while simultaneously adding to the robustness of many of the individual subassemblies.

Nanoscale deformation and fracture mechanics of polycrystalline silicon and diamond-like carbon for MEMS by the AFM/DIC method

NASA Astrophysics Data System (ADS)

Cho, Sung Woo

A method for nanoscale experimental mechanics was developed to address problems in deformation and fracture of micron-scale components in Microelectromechanical Systems (MEMS). Specifically, the effective and local, elastic and fracture behavior of polycrystalline silicon (polysilicon) and tetrahedral amorphous diamond-like carbon (ta-C) were studied using freestanding thin films subject to uniaxial tension. In this method, direct measurements of local deformations were derived from Atomic Force Microscopy (AFM) images in specimen areas varying between 1x2 mum2 and 15x15 mum2 using Digital Image Correlation (DIC) to extract displacements and strains with spatial resolution of 1-2 nm. The effective elastic modulus and Poisson's ratio of polysilicon and ta-C from the Sandia National Laboratories (SUMMiT) were 155 +/- 6 GPa and 0.22 +/- 0.02, and 759 +/- 22 GPa and 0.17 +/- 0.03, respectively. Similarly, the elastic modulus and Poisson's ratio of polysilicon fabricated at MCNC via the Multi-User MEMS Processes (MUMPs) with <110> texture were 164 +/- 7 GPa and 0.22 +/- 0.02, respectively. A second problem studied using the AFM/DIC method was the fracture of polysilicon in the presence of atomically sharp cracks. The effective (macroscopic) Mode-I critical stress intensity factor for polysilicon from different MUMPs runs was 1.00 +/- 0.1 MPa√m, where 0.1 MPa√m was the standard deviation, attributed to local cleavage anisotropy and grain boundary toughening. The variation in the effective critical stress intensity factor and the subcritical crack growth of polysilicon that was spatially recorded and quantified for the first time were the result of the spatial variation of the 4 local stress intensity factor at the crack tip that controlled crack initiation and thus, the overall fracture process. The AFM/DIC method was also applied to determine the minimum size of a polysilicon domain whose effective mechanical behavior could be described by the isotropic elastic constants. The isotropic material constants are applicable to MEMS components comprised of at least 15x15 grains, which correspond to a specimen area of 10x10-mum2 for SUMMiT and of 5x5-mum2 for MUMPs polysilicon, respectively.

Automated array assembly task development of low-cost polysilicon solar cells

NASA Technical Reports Server (NTRS)

Jones, G. T.

1980-01-01

Development of low cost, large area polysilicon solar cells was conducted in this program. Three types of polysilicon materialk were investigated. A theoretical and experimenal comparison between single crystal silicon and polysilicon solar cell efficiency was performed. Significant electrical performance differences were observed between types of wafer material, i.e. fine grain and coarse grain polysilicon and single crystal silicon. Efficiency degradation due to grain boundaries in fin grain and coarse grain polysilicon was shown to be small. It was demonstrated that 10 percent efficient polysilicon solar cells can be produced with spray on n+ dopants. This result fulfills an important goal of this project, which is the production of batch quantity of 10 percent efficient polysilicon solar cells.

Development of the silane process for the production of low-cost polysilicon

NASA Technical Reports Server (NTRS)

Iya, S. K.

1986-01-01

It was recognized that the traditional hot rod type deposition process for decomposing silane is energy intensive, and a different approach for converting silane to silicon was chosen. A 1200 metric tons/year capacity commercial plant was constructed in Moses Lake, Washington. A fluidized bed processor was chosen as the most promising technology and several encouraging test runs were conducted. This technology continues to be very promising in producing low cost polysilicon. The Union Carbide silane process and the research development on the fluidized bed silane decomposition are discussed.

Formaldehyde gas sensor based on TiO2 thin membrane integrated with nano silicon structure

NASA Astrophysics Data System (ADS)

Zheng, Xuan; Ming, An-jie; Ye, Li; Chen, Feng-hua; Sun, Xi-long; Liu, Wei-bing; Li, Chao-bo; Ou, Wen; Wang, Wei-bing; Chen, Da-peng

2016-07-01

An innovative formaldehyde gas sensor based on thin membrane type metal oxide of TiO2 layer was designed and fabricated. This sensor under ultraviolet (UV) light emitting diode (LED) illumination exhibits a higher response to formaldehyde than that without UV illumination at low temperature. The sensitivities of the sensor under steady working condition were calculated for different gas concentrations. The sensitivity to formaldehyde of 7.14 mg/m3 is about 15.91 under UV illumination with response time of 580 s and recovery time of 500 s. The device was fabricated through micro-electro-mechanical system (MEMS) processing technology. First, plasma immersion ion implantation (PIII) was adopted to form black polysilicon, then a nanoscale TiO2 membrane with thickness of 53 nm was deposited by DC reactive magnetron sputtering to obtain the sensing layer. By such fabrication approaches, the nanoscale polysilicon presents continuous rough surface with thickness of 50 nm, which could improve the porosity of the sensing membrane. The fabrication process can be mass-produced for the MEMS process compatibility.

Method for selective CMP of polysilicon

NASA Technical Reports Server (NTRS)

Babu, Suryadevara V. (Inventor); Natarajan, Anita (Inventor); Hegde, Sharath (Inventor)

2010-01-01

A method of removing polysilicon in preference to silicon dioxide and/or silicon nitride by chemical mechanical polishing. The method removes polysilicon from a surface at a high removal rate while maintaining a high selectivity of polysilicon to silicon dioxide and/or a polysilicon to silicon nitride. The method is particularly suitable for use in the fabrication of MEMS devices.

Design and simulation of betavoltaic battery using large-grain polysilicon.

PubMed

Yao, Shulin; Song, Zijun; Wang, Xiang; San, Haisheng; Yu, Yuxi

2012-10-01

In this paper, we present the design and simulation of a p-n junction betavoltaic battery based on large-grain polysilicon. By the Monte Carlo simulation, the average penetration depth were obtained, according to which the optimal depletion region width was designed. The carriers transport model of large-grain polysilicon is used to determine the diffusion length of minority carrier. By optimizing the doping concentration, the maximum power conversion efficiency can be achieved to be 0.90% with a 10 mCi/cm(2) Ni-63 source radiation. Copyright © 2012 Elsevier Ltd. All rights reserved.

Microsacle PolySilicon Hemispherical Shell Resonating Gyroscopes with Integrated Three-dimensional Curved Electrodes

NASA Astrophysics Data System (ADS)

Zhuang, Xuye; Chen, Binggen; Wang, Xinlong; Yu, Lei; Wang, Fan; Guo, Shuwen

2018-03-01

A novel approach for fabrication of polysilicon hemispherical resonator gyroscopes with integrated 3-D curved electrodes is developed and experimentally demonstrated. The 3-D polysilicon electrodes are integrated as a part of the hemispherical shell resonator’s fabrication process, and no extra assembly process are needed, ensuring the symmetry of the shell resonator. The fabrication process and materials used are compatible with the traditional semiconductor process, indicating the gyroscope has a high potential for mass production and commercial development. Without any trimming or tuning of the n=2 wineglass frequencies, a 28 kHz shell resonator demonstrates a 0.009% frequency mismatch between two degenerate wineglass modes, and a 13.6 kHz resonator shows a frequency split of 0.03%. The ring-down time of a fabricated resonator is 0.51 s, corresponding to a Q of 22000, at 0.01 Pa vacuum and room temperature. The prototype of the gyroscope is experimentally analyzed, and the scale factor of the gyro is 1.15 mV/°/s, the bias instability is 80 °/h.

78 FR 21344 - Grant of Authority for Subzone Status, Hemlock Semiconductor Corporation, (Polysilicon), Hemlock...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-04-10

... Status, Hemlock Semiconductor Corporation, (Polysilicon), Hemlock, Michigan Pursuant to its authority... polysilicon manufacturing facility of Hemlock Semiconductor Corporation, located in Hemlock, Michigan (FTZ... manufacturing of polysilicon at the facility of Hemlock Semiconductor Corporation, located in Hemlock, Michigan...

Photoacoustic Imaging.

DTIC Science & Technology

1983-12-01

recrystallization is currently an active area of research. Much effort has been made to grow large grain polysilicon with grain sizes of 100 microns from fine grain... polysilicon using laser recrystallization. The recrystallization process is inherently traumatic, producing large changes in temperature in short...temperature distribution above as the source term in the acoustic field equation, we ol fain r where B1)jwP) The general solution to this equation is given by

Design and characterization of MEMS interferometric sensing

NASA Astrophysics Data System (ADS)

Snyder, R.; Siahmakoun, A.

2010-02-01

A MEMS-based interferometric sensor is produced using the multi-user MEMS processing standard (MUMPS) micromirrors, movable by thermal actuation. The interferometer is comprised of gold reflection surfaces, polysilicon thermal actuators, hinges, latches and thin film polarization beam splitters. A polysilicon film of 3.5 microns reflects and transmits incident polarized light from an external laser source coupled to a multi-mode optical fiber. The input beam is shaped to a diameter of 10 to 20 microns for incidence upon the 100 micron mirrors. Losses in the optical path include diffraction effects from etch holes created in the manufacturing process, surface roughness of both gold and polysilicon layers, and misalignment of micro-scale optical components. Numerous optical paths on the chip vary by length, number of reflections, and mirror subsystems employed. Subsystems include thermal actuator batteries producing lateral position displacement, angularly tunable mirrors, double reflection surfaces, and static vertical mirrors. All mirror systems are raised via manual stimulation using two micron, residue-free probe tips and some may be aligned using electrical signals causing resistive heating in thermal actuators. The characterization of thermal actuator batteries includes maximum displacement, deflection, and frequency response that coincides with theoretical thermodynamic simulations using finite-element analysis. Maximum deflection of 35 microns at 400 mW input electrical power is shown for three types of actuator batteries as is deflection dependent frequency response data for electrical input signals up to 10 kHz.

Dynamic MEMS devices for multi-axial fatigue and elastic modulus measurement

NASA Astrophysics Data System (ADS)

White, Carolyn D.; Xu, Rui; Sun, Xiaotian; Komvopoulos, Kyriakos

2003-01-01

For reliable MEMS device fabrication and operation, there is a continued demand for precise characterization of materials at the micron scale. This paper presents a novel material characterization device for fatigue lifetime testing. The fatigue specimen is subjected to multi-axial loading, which is typical of most MEMS devices. Polycrystalline silicon (polysilicon) fatigue devices were fabricated using the MUMPS process with a three layer mask process ground plane, anchor, and structural layer of polysilicon. A fatigue device consists of two or three beams, attached to a rotating ring and anchored to the substrate on each end. In order to generate a sufficiently large stress, the fatigue devices were tested in resonance to produce a von Mises equivalent stress as high as 1 GPa, which is in the fracture strength range reported for polysilicon. A further increase of the stress in the beam specimens was obtained by introducing a notch with a focused ion beam. The notch resulted into a stress concentration factor of about 3.8, thereby producing maximum von Mises equivalent stress in the range of 1 through 4 GPa. This study provides insight into multi-axial fatigue testing under typical MEMS conditions and additional information about micron-scale polysilicon mechanical behavior, which is the current basic building material for MEMS devices.

Fatigue and Fracture of Polycrystalline Silicon and Diamond MEMS at Room and Elevated Temperatures

DTIC Science & Technology

2006-12-01

amorphous diamond-like carbon (ta-C) and polycrystalline silicon ( polysilicon ) for microelectromechanical systems (MEMS). Polysilicon and ta-C test...toughness were obtained, many of them for the first time. Compared to polysilicon , ta-C was found to have superior mechanical properties: Its fracture...toughness and strength were 3.5 times and two times that of polysilicon , respectively. Its elastic modulus was 4.5 times that of polysilicon and its

Silicon production process evaluations

NASA Technical Reports Server (NTRS)

1982-01-01

Chemical engineering analyses involving the preliminary process design of a plant (1,000 metric tons/year capacity) to produce silicon via the technology under consideration were accomplished. Major activities in the chemical engineering analyses included base case conditions, reaction chemistry, process flowsheet, material balance, energy balance, property data, equipment design, major equipment list, production labor and forward for economic analysis. The process design package provided detailed data for raw materials, utilities, major process equipment and production labor requirements necessary for polysilicon production in each process.

Mechanical Characterization of Polysilicon MEMS: A Hybrid TMCMC/POD-Kriging Approach.

PubMed

Mirzazadeh, Ramin; Eftekhar Azam, Saeed; Mariani, Stefano

2018-04-17

Microscale uncertainties related to the geometry and morphology of polycrystalline silicon films, constituting the movable structures of micro electro-mechanical systems (MEMS), were investigated through a joint numerical/experimental approach. An on-chip testing device was designed and fabricated to deform a compliant polysilicon beam. In previous studies, we showed that the scattering in the input–output characteristics of the device can be properly described only if statistical features related to the morphology of the columnar polysilicon film and to the etching process adopted to release the movable structure are taken into account. In this work, a high fidelity finite element model of the device was used to feed a transitional Markov chain Monte Carlo (TMCMC) algorithm for the estimation of the unknown parameters governing the aforementioned statistical features. To reduce the computational cost of the stochastic analysis, a synergy of proper orthogonal decomposition (POD) and kriging interpolation was adopted. Results are reported for a batch of nominally identical tested devices, in terms of measurement error-affected probability distributions of the overall Young’s modulus of the polysilicon film and of the overetch depth.

Single neuronal recordings using surface micromachined polysilicon microelectrodes.

PubMed

Muthuswamy, Jit; Okandan, Murat; Jackson, Nathan

2005-03-15

Bulk micromachining techniques of silicon have been used successfully in the past several years to microfabricate microelectrodes for monitoring single neurons in acute and chronic experiments. In this study we report for the first time a novel surface micromachining technique to microfabricate a very thin polysilicon microelectrode that can be used for monitoring single-unit activity in the central nervous system. The microelectrodes are 3 mm long and 50 microm x 3.75 microm in cross-section. Excellent signal to noise ratios in the order of 25-35 dB were obtained while recording neuronal action potentials. The microelectrodes successfully penetrated the brains after a microincision of the dura mater. Chronic implantation of the microprobe for up to 33 days produced only minor gliosis. Since the polysilicon shank acts as a conductor, additional processing steps involved in laying conductor lines on silicon substrates are avoided. Further, surface micromachining allows for fabricating extremely thin microelectrodes which could result in decreased inflammatory responses. We conclude that the polysilicon microelectrode reported here could be a complementary approach to bulk-micromachined silicon microelectrodes for chronic monitoring of single neurons in the central nervous system.

Experimental determination of the impact of polysilicon LER on sub-100-nm transistor performance

NASA Astrophysics Data System (ADS)

Patterson, Kyle; Sturtevant, John L.; Alvis, John R.; Benavides, Nancy; Bonser, Douglas; Cave, Nigel; Nelson-Thomas, Carla; Taylor, William D.; Turnquest, Karen L.

2001-08-01

Photoresist line edge roughness (LER) has long been feared as a potential limitation to the application of various patterning technologies to actual devices. While this concern seems reasonable, experimental verification has proved elusive and thus LER specifications are typically without solid parametric rationale. We report here the transistor device performance impact of deliberate variations of polysilicon gate LER. LER magnitude was attenuated by more than a factor of 5 by altering the photoresist type and thickness, substrate reflectivity, masking approach, and etch process. The polysilicon gate LER for nominally 70 - 150 nm devices was quantified using digital image processing of SEM images, and compared to gate leakage and drive current for variable length and width transistors. With such comparisons, realistic LER specifications can be made for a given transistor. It was found that subtle cosmetic LER differences are often not discernable electrically, thus providing hope that LER will not limit transistor performance as the industry migrates to sub-100 nm patterning.

A low-cost CMOS-MEMS piezoresistive accelerometer with large proof mass.

PubMed

Khir, Mohd Haris Md; Qu, Peng; Qu, Hongwei

2011-01-01

This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresistive sensing material. A full Wheatstone bridge was constructed through easy wiring allowed by the three metal layers in the 0.5 μm CMOS technology. The device fabrication process consisted of a standard CMOS process for sensor configuration, and a deep reactive ion etching (DRIE) based post-CMOS microfabrication for MEMS structure release. A bulk single-crystal silicon (SCS) substrate is included in the proof mass to increase sensor sensitivity. In device design and analysis, the self heating of the polysilicon piezoresistors and its effect to the sensor performance is also discussed. With a low operating power of 1.5 mW, the accelerometer demonstrates a sensitivity of 0.077 mV/g prior to any amplification. Dynamic tests have been conducted with a high-end commercial calibrating accelerometer as reference.

High Efficiency Large Area Polysilicon Solar Cells

NASA Technical Reports Server (NTRS)

Johnson, S. M.; Winter, C.

1985-01-01

Large area (100 sq cm) polysilicon solar cells having efficiencies of up to 14.1% (100 mW/sq cm, 25 C) were fabricated and a detailed analysis was performed to identify the efficiency loss mechanisms. The 1-5 characteristics of the best cell were dominated by recombination in the quasi-neutral base due to the combination of minority carrier diffusion length and base resistivity. An analysis of the microstructural defects present in the material and their effect on the electrical properties is presented.

Method of forming contacts for a back-contact solar cell

DOEpatents

Manning, Jane

2013-07-23

Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.

Electronic Subsystem Analysis (ESA)

DTIC Science & Technology

1977-01-01

than aluminum for the gate material, 0 Ion implanted source and draia regions, 0 Dielectrically isolated transistors. The use of a doped polysilicon gate...second level of interconnect ( polysilicon ). Ion implantation is essentially a precisely controllable pre-deposition of the required dopants. It’s use...discussed below). Radiation effects on MOS devices include the following: 0 Total Dose ol Dose Rate o Neutrons Because MOS technology is based on

Metal-ferroelectric-metal capacitor based persistent memory for electronic product code class-1 generation-2 uhf passive radio-frequency identification tag

NASA Astrophysics Data System (ADS)

Yoon, Bongno; Sung, Man Young; Yeon, Sujin; Oh, Hyun S.; Kwon, Yoonjoo; Kim, Chuljin; Kim, Kyung-Ho

2009-03-01

With the circuits using metal-ferroelectric-metal (MFM) capacitor, rf operational signal properties are almost the same or superior to those of polysilicon-insulator-polysilicon, metal-insulator-metal, and metal-oxide-semiconductor (MOS) capacitors. In electronic product code global class-1 generation-2 uhf radio-frequency identification (RFID) protocols, the MFM can play a crucial role in satisfying the specifications of the inventoried flag's persistence times (Tpt) for each session (S0-S3, SL). In this paper, we propose and design a new MFM capacitor based memory scheme of which persistence time for S1 flag is measured at 2.2 s as well as indefinite for S2, S3, and SL flags during the period of power-on. A ferroelectric random access memory embedded RFID tag chip is fabricated with an industry-standard complementary MOS process. The chip size is around 500×500 μm2 and the measured power consumption is about 10 μW.

Step-gate polysilicon nanowires field effect transistor compatible with CMOS technology for label-free DNA biosensor.

PubMed

Wenga, G; Jacques, E; Salaün, A-C; Rogel, R; Pichon, L; Geneste, F

2013-02-15

Currently, detection of DNA hybridization using fluorescence-based detection technique requires expensive optical systems and complex bioinformatics tools. Hence, the development of new low cost devices that enable direct and highly sensitive detection stimulates a lot of research efforts. Particularly, devices based on silicon nanowires are emerging as ultrasensitive electrical sensors for the direct detection of biological species thanks to their high surface to volume ratio. In this study, we propose innovative devices using step-gate polycrystalline silicon nanowire FET (poly-Si NW FETs), achieved with simple and low cost fabrication process, and used as ultrasensitive electronic sensor for DNA hybridization. The poly-SiNWs are synthesized using the sidewall spacer formation technique. The detailed fabrication procedure for a step-gate NWFET sensor is described in this paper. No-complementary and complementary DNA sequences were clearly discriminated and detection limit to 1 fM range is observed. This first result using this nano-device is promising for the development of low cost and ultrasensitive polysilicon nanowires based DNA sensors compatible with the CMOS technology. Copyright © 2012 Elsevier B.V. All rights reserved.

Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS

NASA Astrophysics Data System (ADS)

De Barros, O.; Le Tron, B.; Woods, R. C.; Giroult-Matlakowski, G.; Vincent, G.; Brémond, G.

1996-08-01

This paper reports an electrical characterisation of the emitter-base junction of Si pseudo-HBTs and SiGe HBTs fabricated in a CMOS compatible single polysilicon self-aligned process. From the reverse characteristics it appears that the definition of the emitter-base junction by plasma etching induces peripheral defects that increase the base current of the transistors. Deep level transient spectroscopy measurements show a deep level in the case of SiGe base, whose spatial origin is not fully determinate up to now.

Polysilicon for everything?

NASA Astrophysics Data System (ADS)

Ward, M. C. L.; McNie, Mark E.; Bunyan, Robert J.; King, David O.; Carline, Roger T.; Wilson, Rebecca; Gillham, J. P.

1998-09-01

We review some of the attractive attributes of microengineering and relate them to features of the highly successful silicon microelectronics industry. We highlight the need for cost effective functionality rather than ultimate performance as a driver for success and review key examples of polysilicon devices from this point of view. The effective exploitation of the data generated by the cost effective polysilicon sensors is also considered and we conclude that `non traditional' data analysis will need to be exploited if full use is to be made of polysilicon devices.

Polysilicon Prepared from SiCl4 by Atmospheric-Pressure Non-Thermal Plasma

NASA Astrophysics Data System (ADS)

Li, Xiaosong; Wang, Nan; Yang, Jinhua; Wang, Younian; Zhu, Aimin

2011-10-01

Non-thermal plasma at atmospheric pressure was explored for the preparation of polysilicon from SiCl4. The power supply sources of positive pulse and alternating current (8 kHz and 100 kHz) were compared for polysilicon preparation. The samples prepared by using the 100 kHz power source were crystalline silicon. The effects of H2 and SiCl4 volume fractions were investigated. The optical emission spectra showed that silicon species played an important role in polysilicon deposition

Laser and Electron Beam Processing of Semiconductors: CW Beam- Recrystallized Polysilicon as a Device-Worthy Material

DTIC Science & Technology

1980-12-31

boundary is given by the thermionic emission current, kT 1 /2 qVB qVa Jth = qn (m) exp (- [exp (Kn)- 1 ] ( 1 ) where Va is the applied voltage, q is the...small applied voltage, qVa << kT, Eq. ( 1 ) reduces to Jth = LVa (2) where = q n exp - -T- q.na (3) which gives the effective grain boundary resistance...POLYSILICON AS A DEVICE-WORTHY MATERIAL BY STANFORD UNIVERSITY STANFORD, CALIFORNIA 94305 FOR THE PERIOD JANUARY 1 , 1978 THROUGH DECEMBER 31, 1980 Dr

Surface-micromachined 2D optical scanners with optically flat single-crystalline silicon micromirrors

NASA Astrophysics Data System (ADS)

Su, John G.; Patterson, Pamela R.; Wu, Ming C.

2001-05-01

We have developed a novel wafer-scale single-crystalline silicon micromirror bonding process to fabricate optically flat micromirrors on polysilicon surface-micromachined 2D scanners. The electrostatically actuated 2D scanner has a mirror area of 450 micrometers x 450 micrometers and an optical scan angle of +/- +/-7.5 degree(s). Compared to micromirrors made with a standard polysilicon surface-micromachining process, the radius of curvature of the micromirror has been improved by 1 50 times from 1.8 cm to 265 cm, with surface roughness < 10 nm. Besides, single-crystalline honeycomb micromirrors derived from silicon on insulator (SOI) have been developed to reduce the mass of the bonded mirror.

A Low-Cost CMOS-MEMS Piezoresistive Accelerometer with Large Proof Mass

PubMed Central

Khir, Mohd Haris Md; Qu, Peng; Qu, Hongwei

2011-01-01

This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresistive sensing material. A full Wheatstone bridge was constructed through easy wiring allowed by the three metal layers in the 0.5 μm CMOS technology. The device fabrication process consisted of a standard CMOS process for sensor configuration, and a deep reactive ion etching (DRIE) based post-CMOS microfabrication for MEMS structure release. A bulk single-crystal silicon (SCS) substrate is included in the proof mass to increase sensor sensitivity. In device design and analysis, the self heating of the polysilicon piezoresistors and its effect to the sensor performance is also discussed. With a low operating power of 1.5 mW, the accelerometer demonstrates a sensitivity of 0.077 mV/g prior to any amplification. Dynamic tests have been conducted with a high-end commercial calibrating accelerometer as reference. PMID:22164052

Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaminski, Yelena; TowerJazz Ltd. Migdal Haemek; Shauly, Eitan

2015-12-07

The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. Amore » simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect.« less

Synthesis of Poly-Silicon Thin Films on Glass Substrate Using Laser Initiated Metal Induced Crystallization of Amorphous Silicon for Space Power Application

NASA Technical Reports Server (NTRS)

Abu-Safe, Husam H.; Naseem, Hameed A.; Brown, William D.

2007-01-01

Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.

Uncovering the Fundamental Nature of Tribological Interfaces: High Resolution Tribology and Spectroscopy of Ultrahard Nanostructured Diamond Films for MEMS and Beyond

DTIC Science & Technology

2007-12-31

Wisconsin-Madison) for 2? ol !> o "S \\ % M 31 Statement of Objectives The original objectives of the proposal were as follows: 1. Obtain high-quality...performed multiple PEEM experiments on wear tracks on carbon-based films and polysilicon micro-electro mechanical systems (MEMS) devices, a comprehensive... polysilicon MEMS device known as the "nanotractor", and studies of the structure and composition of UNCD, ta-C, and nanocrystalline diamond (NCD) films. They

A microfluidic device integrating dual CMOS polysilicon nanowire sensors for on-chip whole blood processing and simultaneous detection of multiple analytes.

PubMed

Kuan, Da-Han; Wang, I-Shun; Lin, Jiun-Rue; Yang, Chao-Han; Huang, Chi-Hsien; Lin, Yen-Hung; Lin, Chih-Ting; Huang, Nien-Tsu

2016-08-02

The hemoglobin-A1c test, measuring the ratio of glycated hemoglobin (HbA1c) to hemoglobin (Hb) levels, has been a standard assay in diabetes diagnosis that removes the day-to-day glucose level variation. Currently, the HbA1c test is restricted to hospitals and central laboratories due to the laborious, time-consuming whole blood processing and bulky instruments. In this paper, we have developed a microfluidic device integrating dual CMOS polysilicon nanowire sensors (MINS) for on-chip whole blood processing and simultaneous detection of multiple analytes. The micromachined polymethylmethacrylate (PMMA) microfluidic device consisted of a serpentine microchannel with multiple dam structures designed for non-lysed cells or debris trapping, uniform plasma/buffer mixing and dilution. The CMOS-fabricated polysilicon nanowire sensors integrated with the microfluidic device were designed for the simultaneous, label-free electrical detection of multiple analytes. Our study first measured the Hb and HbA1c levels in 11 clinical samples via these nanowire sensors. The results were compared with those of standard Hb and HbA1c measurement methods (Hb: the sodium lauryl sulfate hemoglobin detection method; HbA1c: cation-exchange high-performance liquid chromatography) and showed comparable outcomes. Finally, we successfully demonstrated the efficacy of the MINS device's on-chip whole blood processing followed by simultaneous Hb and HbA1c measurement in a clinical sample. Compared to current Hb and HbA1c sensing instruments, the MINS platform is compact and can simultaneously detect two analytes with only 5 μL of whole blood, which corresponds to a 300-fold blood volume reduction. The total assay time, including the in situ sample processing and analyte detection, was just 30 minutes. Based on its on-chip whole blood processing and simultaneous multiple analyte detection functionalities with a lower sample volume requirement and shorter process time, the MINS device can be effectively applied to real-time diabetes diagnostics and monitoring in point-of-care settings.

Trench process and structure for backside contact solar cells with polysilicon doped regions

DOEpatents

De Ceuster, Denis; Cousins, Peter John; Smith, David D

2014-03-18

A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

Trench process and structure for backside contact solar cells with polysilicon doped regions

DOEpatents

De Ceuster, Denis; Cousins, Peter John; Smith, David D

2013-05-28

A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

Trench process and structure for backside contact solar cells with polysilicon doped regions

DOEpatents

De Ceuster, Denis; Cousins, Peter John; Smith, David D.

2010-12-14

A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

Guiding gate-etch process development using 3D surface reaction modeling for 7nm and beyond

NASA Astrophysics Data System (ADS)

Dunn, Derren; Sporre, John R.; Deshpande, Vaibhav; Oulmane, Mohamed; Gull, Ronald; Ventzek, Peter; Ranjan, Alok

2017-03-01

Increasingly, advanced process nodes such as 7nm (N7) are fundamentally 3D and require stringent control of critical dimensions over high aspect ratio features. Process integration in these nodes requires a deep understanding of complex physical mechanisms to control critical dimensions from lithography through final etch. Polysilicon gate etch processes are critical steps in several device architectures for advanced nodes that rely on self-aligned patterning approaches to gate definition. These processes are required to meet several key metrics: (a) vertical etch profiles over high aspect ratios; (b) clean gate sidewalls free of etch process residue; (c) minimal erosion of liner oxide films protecting key architectural elements such as fins; and (e) residue free corners at gate interfaces with critical device elements. In this study, we explore how hybrid modeling approaches can be used to model a multi-step finFET polysilicon gate etch process. Initial parts of the patterning process through hardmask assembly are modeled using process emulation. Important aspects of gate definition are then modeled using a particle Monte Carlo (PMC) feature scale model that incorporates surface chemical reactions.1 When necessary, species and energy flux inputs to the PMC model are derived from simulations of the etch chamber. The modeled polysilicon gate etch process consists of several steps including a hard mask breakthrough step (BT), main feature etch steps (ME), and over-etch steps (OE) that control gate profiles at the gate fin interface. An additional constraint on this etch flow is that fin spacer oxides are left intact after final profile tuning steps. A natural optimization required from these processes is to maximize vertical gate profiles while minimizing erosion of fin spacer films.2

A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications

PubMed Central

Chen, Min-Cheng; Chen, Hao-Yu; Lin, Chia-Yi; Chien, Chao-Hsin; Hsieh, Tsung-Fan; Horng, Jim-Tong; Qiu, Jian-Tai; Huang, Chien-Chao; Ho, Chia-Hua; Yang, Fu-Liang

2012-01-01

This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording. PMID:22666012

Research on the Electro-explosive Behaviors and the Ignition Performances of Energetic Igniters

NASA Astrophysics Data System (ADS)

Li, Yong; Jia, Xin; Wang, Liu; Zhou, Bin; Shen, Ruiqi

2018-01-01

This article describes the electro-explosive behaviors and the ignition performances of energetic igniters based on the combination of polysilicon film with Al/CuO nanoenergetic multilayer films (nEMFs).The ultra-high-speed framing camera images show that melting first occurs at the V-type angles and then expands to the entire bridge. The Al/CuO nEMF is heated and fired from below, forced to form lots of flyers with different sizes, ejected with the expansion of polysilicon plasma, and reacts exothermically to release a large quantity of energy. Furthermore, temperature diagnosis results demonstrate higher temperature products of energetic igniters. Ignition experiment at a standoff of 1.5 mm results show that the average firing voltage and the variance of energetic igniters are 28.50 V and 0.96, whereas those of polysilicon igniters are 32.05 V and 1.94.

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang; Wu, Chyan-Chyi

2011-01-01

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process was investigated. The structure of the ammonia sensor is composed of a sensitive film and polysilicon electrodes. The ammonia sensor requires a post-process to etch the sacrificial layer, and to coat the sensitive film on the polysilicon electrodes. The sensitive film that is prepared by a hydrothermal method is made of zinc oxide. The sensor resistance changes when the sensitive film adsorbs or desorbs ammonia gas. The readout circuit is used to convert the sensor resistance into the voltage output. Experiments show that the ammonia sensor has a sensitivity of about 1.5 mV/ppm at room temperature.

New methodology to baseline and match AME polysilicon etcher using advanced diagnostic tools

NASA Astrophysics Data System (ADS)

Poppe, James; Shipman, John; Reinhardt, Barbara E.; Roussel, Myriam; Hedgecock, Raymond; Fonda, Arturo

1999-09-01

As process controls tighten in the semiconductor industry, the need to understand the variables that determine system performance become more important. For plasma etch systems, process success depends on the control of key parameters such as: vacuum integrity, pressure, gas flows, and RF power. It is imperative to baseline, monitor, and control these variables. This paper presents an overview of the methods and tools used by Motorola BMC fabrication facility to characterize an Applied Materials polysilicon etcher. Tool performance data obtained from our traditional measurement techniques are limited in their scope and do not provide a complete picture of the ultimate tool performance. Presently the BMC traditional characterization tools provide a snapshot of the static operation of the equipment under test (EUT); however, complete evaluation of the dynamic performance cannot be monitored without the aid of specialized diagnostic equipment. To provide us with a complete system baseline evaluation of the polysilicon etcher, three diagnostic tools were utilized: Lucas Labs Vacuum Diagnostic System, Residual Gas Analyzer, and the ENI Voltage/Impedance Probe. The diagnostic methodology used to baseline and match key parameters of qualified production equipment has had an immense impact on other equipment characterization in the facility. It has resulted in reduced cycle time for new equipment introduction as well.

Optimized micromirror arrays for adaptive optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Michalicek, M. Adrian

This paper describes the design, layout, fabrication, and surface characterization of highly optimized surface micromachined micromirror devices. Design considerations and fabrication capabilities are presented. These devices are fabricated in the state-of-the-art, four-level, planarized, ultra-low-stress polysilicon process available at Sandia National Laboratories known as the Sandia Ultra-planar Multi-level MEMS Technology (SUMMiT). This enabling process permits the development of micromirror devices with near-ideal characteristics that have previously been unrealizable in standard three-layer polysilicon processes. The reduced 1 {mu}m minimum feature sizes and 0.1 {mu}m mask resolution make it possible to produce dense wiring patterns and irregularly shaped flexures. Likewise, mirror surfaces canmore » be uniquely distributed and segmented in advanced patterns and often irregular shapes in order to minimize wavefront error across the pupil. The ultra-low-stress polysilicon and planarized upper layer allow designers to make larger and more complex micromirrors of varying shape and surface area within an array while maintaining uniform performance of optical surfaces. Powerful layout functions of the AutoCAD editor simplify the design of advanced micromirror arrays and make it possible to optimize devices according to the capabilities of the fabrication process. Micromirrors fabricated in this process have demonstrated a surface variance across the array from only 2{endash}3 nm to a worst case of roughly 25 nm while boasting active surface areas of 98{percent} or better. Combining the process planarization with a {open_quotes}planarized-by-design{close_quotes} approach will produce micromirror array surfaces that are limited in flatness only by the surface deposition roughness of the structural material. Ultimately, the combination of advanced process and layout capabilities have permitted the fabrication of highly optimized micromirror arrays for adaptive optics. {copyright} {ital 1999 American Institute of Physics.}« less

Continuous Czochralski growth: Silicon sheet growth development of the large area sheet task of the low cost silicon solar array project

NASA Technical Reports Server (NTRS)

Johnson, C. M.

1980-01-01

The growth of 100 kg of silicon single crystal material, ten cm in diameter or greater, and 150 kg of silicon single crystal material 15 cm or greater utilizing one common silicon container material (one crucible) is investigated. A crystal grower that is recharged with a new supply of polysilicon material while still under vacuum and at temperatures above the melting point of silicon is developed. It accepts large polysilicon charges up to 30 kg, grows large crystal ingots (to 15 cm diameter and 25 kg in weight), and holds polysilicon material for recharging (rod or lump) while, at the same time, growing crystal ingots. Special equipment is designed to recharge polysilicon rods, recharge polysilicon lumps, and handle and store large, hot silicon crystal ingots. Many continuous crystal growth runs were performed lasting as long as 109 hours and producing as many as ten crystal ingots, 15 cm with weights progressing to 27 kg.

Improved yields for MOST’s using ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brockman, H. E.

1976-04-01

Conventionally diffused source and drain polysilicon gate MOST's commonly exhibit one type of fault, namely, that of polysilicon-to-diffusion short circuits. Investigations into the yields of large-area devices fabricated using ion-implanted sources and drains are compared with those of diffused structures. An improved technology for the chemical shaping of the polysilicon gates, which improves the yields for both types of devices, is also described. (AIP)

Micromechanical Characterization of Polysilicon Films through On-Chip Tests

PubMed Central

Mirzazadeh, Ramin; Eftekhar Azam, Saeed; Mariani, Stefano

2016-01-01

When the dimensions of polycrystalline structures become comparable to the average grain size, some reliability issues can be reported for the moving parts of inertial microelectromechanical systems (MEMS). Not only the overall behavior of the device turns out to be affected by a large scattering, but also the sensitivity to imperfections gets enhanced. In this work, through on-chip tests, we experimentally investigate the behavior of thin polysilicon samples using standard electrostatic actuation/sensing. The discrepancy between the target and actual responses of each sample has then been exploited to identify: (i) the overall stiffness of the film and, according to standard continuum elasticity, a morphology-based value of its Young’s modulus; (ii) the relevant over-etch induced by the fabrication process. To properly account for the aforementioned stochastic features at the micro-scale, the identification procedure has been based on particle filtering. A simple analytical reduced-order model of the moving structure has been also developed to account for the nonlinearities in the electrical field, up to pull-in. Results are reported for a set of ten film samples of constant slenderness, and the effects of different actuation mechanisms on the identified micromechanical features are thoroughly discussed. PMID:27483268

Micromechanical Characterization of Polysilicon Films through On-Chip Tests.

PubMed

Mirzazadeh, Ramin; Eftekhar Azam, Saeed; Mariani, Stefano

2016-07-28

When the dimensions of polycrystalline structures become comparable to the average grain size, some reliability issues can be reported for the moving parts of inertial microelectromechanical systems (MEMS). Not only the overall behavior of the device turns out to be affected by a large scattering, but also the sensitivity to imperfections gets enhanced. In this work, through on-chip tests, we experimentally investigate the behavior of thin polysilicon samples using standard electrostatic actuation/sensing. The discrepancy between the target and actual responses of each sample has then been exploited to identify: (i) the overall stiffness of the film and, according to standard continuum elasticity, a morphology-based value of its Young's modulus; (ii) the relevant over-etch induced by the fabrication process. To properly account for the aforementioned stochastic features at the micro-scale, the identification procedure has been based on particle filtering. A simple analytical reduced-order model of the moving structure has been also developed to account for the nonlinearities in the electrical field, up to pull-in. Results are reported for a set of ten film samples of constant slenderness, and the effects of different actuation mechanisms on the identified micromechanical features are thoroughly discussed.

A polymer-based Fabry-Perot filter integrated with 3-D MEMS structures

NASA Astrophysics Data System (ADS)

Zhang, Ping (Cerina); Le, Kevin; Malalur-Nagaraja-Rao, Smitha; Hsu, Lun-Chen; Chiao, J.-C.

2006-01-01

Polymers have been considered as one of the most versatile materials in making optical devices for communication and sensor applications. They provide good optical transparency to form filters, lenses and many optical components with ease of fabrication. They are scalable and compatible in dimensions with requirements in optics and can be fabricated on inorganic substrates, such as silicon and quartz. Recent polymer synthesis also made great progresses on conductive and nonlinear polymers, opening opportunities for new applications. In this paper, we discussed hybrid-material integration of polymers on silicon-based microelectromechanical system (MEMS) devices. The motivation is to combine the advantages of demonstrated silicon-based MEMS actuators and excellent optical performance of polymers. We demonstrated the idea with a polymer-based out-of-plane Fabry-Perot filter that can be self-assembled by scratch drive actuators. We utilized a fabrication foundry service, MUMPS (Multi-User MEMS Process), to demonstrate the feasibility and flexibility of integration. The polysilicon, used as the structural material for construction of 3-D framework and actuators, has high absorption in the visible and near infrared ranges. Therefore, previous efforts using a polysilicon layer as optical interfaces suffer from high losses. We applied the organic compound materials on the silicon-based framework within the optical signal propagation path to form the optical interfaces. In this paper, we have shown low losses in the optical signal processing and feasibility of building a thin-film Fabry-Perot filter. We discussed the optical filter designs, mechanical design, actuation mechanism, fabrication issues, optical measurements, and results.

Two-Scale Simulation of Drop-Induced Failure of Polysilicon MEMS Sensors

PubMed Central

Mariani, Stefano; Ghisi, Aldo; Corigliano, Alberto; Martini, Roberto; Simoni, Barbara

2011-01-01

In this paper, an industrially-oriented two-scale approach is provided to model the drop-induced brittle failure of polysilicon MEMS sensors. The two length-scales here investigated are the package (macroscopic) and the sensor (mesoscopic) ones. Issues related to the polysilicon morphology at the micro-scale are disregarded; an upscaled homogenized constitutive law, able to describe the brittle cracking of silicon, is instead adopted at the meso-scale. The two-scale approach is validated against full three-scale Monte-Carlo simulations, which allow for stochastic effects linked to the microstructural properties of polysilicon. Focusing on inertial MEMS sensors exposed to drops, it is shown that the offered approach matches well the experimentally observed failure mechanisms. PMID:22163885

The Research about Preparation of High Purity Hexachlorodisilane

NASA Astrophysics Data System (ADS)

Wan, Ye; Zhao, Xiong; Yan, Dazhou; Zhao, Yu; Guo, Shuhu; Wang, Lei; Yang, Dian

2017-12-01

This article demonstrated a technology for producing high purity hexachlorodisilane what is one raw material of Semiconductor industry, which using the method of combination adsorption with rectification, whose material was from polysilicon residues of polysilicon company. This technology could remove most high boiling points chloro-silicane impurities and metal impurities effectively. The purity of Si2Cl6 produced by this technology can be up to 99.9%, the content of metal impurities can be low at 4ppb, which can meet the requirement of industy using completely. The technology extends the routes of Si2Cl6 in localization, having the advantages of simple process, continuous operation, and large capacity and so on.

Electrically Erasable Programmable Integrated Circuits for Replacement of Obsolete TTL Logic

DTIC Science & Technology

1991-12-01

different discrete devices" [7]. Fowler-Nordheim Tunneling Simplified Theory. Electrons in polysilicon are usually prevented from entering SiO 2 by an...overcomes the energy barrier, the tunneling electrons will not return to the polysilicon but will be carried by the electric field, causing a current to flow...Floating Gate Transistors A floating gate transistor is an insulated-gate field effect transistor (FET) that has a gate, usually made of polysilicon , which

Advanced Electrical Test Techniques for LSI Microcircuits.

DTIC Science & Technology

1982-03-01

high resistance polysilicon load resistors stacked in the "Z" direction for higher packing density. Featuring resistors typically in the gigaohm range...are made up of "N" diffusions, metal and/or polysilicon lines, and transistors, they are subject to leakage defects. If the leakage of the nonconducting...reference 7) show- ing a poor connection from the FF lead resistor ( Polysilicon ) to the Vcc or the transistor. The FF layout of Figure 1B shows that

Theoretical-Experimental Analysis of the Effects of Grain Boundaries on the Electrical Properties of SOI (Silicon-on-Insulator) MOSFETS.

DTIC Science & Technology

1983-11-01

work on recrystallization of polycrystalline silicon ( polysilicon ) films deposited on silicon-dioxide has demonstrated remarkable improvement in film...quality, and thus has identified another possibly viable 1SO technology for ICs. The polysilicon -on-S10 2 technology not only has the advantages alluded...and consequently higher areal device densities. Virtually all the research to date on polysilicon -on-SiO 2 has concentrated on the

Experimental study of the minority-carrier transport at the polysilicon-monosilicon interface

NASA Astrophysics Data System (ADS)

Neugroschel, A.; Arienzo, M.; Isaac, R. D.; Komem, Y.

1985-04-01

This paper presents the results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contacts. Polysilicon contacts were deposited and heat treated at different conditions. The electrical properties were measured using p-n junction test structures that are much more sensitive to the contact properties than are bipolar transistors. A simple phenomenological model was used to correlate the structural properties with electrical measurements. Possible transport mechanisms are examined and estimates are made about upper bounds on transport parameters in the principal regions of the devices. The main conclusion of this study is that the minority-carrier transport in the polycrystalline silicon is dominated by a highly disordered layer at the polysilicon-monosilicon interface characterized by very low minority-carrier mobility. The effective recombination velocity at the n(+) polysilicon-n(+) monosilicon interface was found to be a strong function of fabrication conditions. The results indicate that the recombination velocity can be much smaller than 10,000 cm/s.

Method for passivating crystal silicon surfaces

DOEpatents

Wang, Qi [Littleton, CO; Wang, Tihu [Littleton, CO; Page, Matthew R [Littleton, CO; Yan, Yanfa [Littleton, CO

2009-12-08

In a method of making a c-Si-based cell or a .mu.c-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH.sub.3/H.sub.2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH.sub.3/H.sub.2.

Modeling Impact-induced Failure of Polysilicon MEMS: A Multi-scale Approach.

PubMed

Mariani, Stefano; Ghisi, Aldo; Corigliano, Alberto; Zerbini, Sarah

2009-01-01

Failure of packaged polysilicon micro-electro-mechanical systems (MEMS) subjected to impacts involves phenomena occurring at several length-scales. In this paper we present a multi-scale finite element approach to properly allow for: (i) the propagation of stress waves inside the package; (ii) the dynamics of the whole MEMS; (iii) the spreading of micro-cracking in the failing part(s) of the sensor. Through Monte Carlo simulations, some effects of polysilicon micro-structure on the failure mode are elucidated.

SCMOS (Scalable Complementary Metal Oxide Silicon) Silicon Compiler Organelle Design and Insertion.

DTIC Science & Technology

1987-12-01

polysilicon running horizontally), with the p-type toward Vdd and the n-type toward GND. * Substrate contacts are connected by metal to supply rails...IN’) + (CIN’) Note: The single quote (’) represents the ’not’ of the variable. Figure 2.3 Logic Expressions.. * First metal and polysilicon are... polysilicon . *All external connections to 1,10, CLOCK, Vdd and G.ND end at least 2 units past first metal that is not an 1,0 point. *All external

Cleaning up Silicon

NASA Technical Reports Server (NTRS)

2000-01-01

A development program that started in 1975 between Union Carbide and JPL, led to Advanced Silicon Materials LLC's, formerly ASiMI, commercial process for producing silane in viable quantities. The process was expanded to include the production of high-purity polysilicon for electronic devices. The technology came out of JPL's Low Cost Silicon Array Project.

Influence of high energy electron irradiation on the characteristics of polysilicon thin film transistors

NASA Astrophysics Data System (ADS)

Aleksandrova, P. V.; Gueorguiev, V. K.; Ivanov, Tz. E.; Kaschieva, S.

2006-08-01

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide parameters the gate oxide tunneling conduction and transistor characteristics were studied. At MeV dose of 6×1013 el/cm2, a negligible degradation of the transistor properties was found. A significant deterioration of the electrical properties of PSTFTs at MeV irradiation dose of 3×1014 el/cm2 was observed.

Low stress polysilicon film and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor)

2001-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Low stress polysilicon film and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor)

2002-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Physically-Based Reduced Order Modelling of a Uni-Axial Polysilicon MEMS Accelerometer

PubMed Central

Ghisi, Aldo; Mariani, Stefano; Corigliano, Alberto; Zerbini, Sarah

2012-01-01

In this paper, the mechanical response of a commercial off-the-shelf, uni-axial polysilicon MEMS accelerometer subject to drops is numerically investigated. To speed up the calculations, a simplified physically-based (beams and plate), two degrees of freedom model of the movable parts of the sensor is adopted. The capability and the accuracy of the model are assessed against three-dimensional finite element simulations, and against outcomes of experiments on instrumented samples. It is shown that the reduced order model provides accurate outcomes as for the system dynamics. To also get rather accurate results in terms of stress fields within regions that are prone to fail upon high-g shocks, a correction factor is proposed by accounting for the local stress amplification induced by re-entrant corners. PMID:23202031

Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction

PubMed Central

Marigó, Eloi; Sansa, Marc; Pérez-Murano, Francesc; Uranga, Arantxa; Barniol, Núria

2015-01-01

A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology. PMID:26184222

Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction.

PubMed

Marigó, Eloi; Sansa, Marc; Pérez-Murano, Francesc; Uranga, Arantxa; Barniol, Núria

2015-07-14

A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

Numerical Simulations of a 96-rod Polysilicon CVD Reactor

NASA Astrophysics Data System (ADS)

Guoqiang, Tang; Cong, Chen; Yifang, Cai; Bing, Zong; Yanguo, Cai; Tihu, Wang

2018-05-01

With the rapid development of the photovoltaic industry, pressurized Siemens belljar-type polysilicon CVD reactors have been enlarged from 24 rods to 96 rods in less than 10 years aimed at much greater single-reactor productivity. A CFD model of an industry-scale 96-rod CVD reactor was established to study the internal temperature distribution and the flow field of the reactor. Numerical simulations were carried out and compared with actual growth results from a real CVD reactor. Factors affecting polysilicon depositions such as inlet gas injections, flow field, and temperature distribution in the CVD reactor are studied.

New technologies for solar energy silicon - Cost analysis of BCL process

NASA Technical Reports Server (NTRS)

Yaws, C. L.; Li, K.-Y.; Fang, C. S.; Lutwack, R.; Hsu, G.; Leven, H.

1980-01-01

New technologies for producing polysilicon are being developed to provide lower cost material for solar cells which convert sunlight into electricity. This article presents results for the BCL Process, which produces the solar-cell silicon by reduction of silicon tetrachloride with zinc vapor. Cost, sensitivity, and profitability analysis results are presented based on a preliminary process design of a plant to produce 1000 metric tons/year of silicon by the BCL Process. Profitability analysis indicates a sales price of $12.1-19.4 per kg of silicon (1980 dollars) at a 0-25 per cent DCF rate of return on investment after taxes. These results indicate good potential for meeting the goal of providing lower cost material for silicon solar cells.

A CMOS wireless biomolecular sensing system-on-chip based on polysilicon nanowire technology.

PubMed

Huang, C-W; Huang, Y-J; Yen, P-W; Tsai, H-H; Liao, H-H; Juang, Y-Z; Lu, S-S; Lin, C-T

2013-11-21

As developments of modern societies, an on-field and personalized diagnosis has become important for disease prevention and proper treatment. To address this need, in this work, a polysilicon nanowire (poly-Si NW) based biosensor system-on-chip (bio-SSoC) is designed and fabricated by a 0.35 μm 2-Poly-4-Metal (2P4M) complementary metal-oxide-semiconductor (CMOS) process provided by a commercialized semiconductor foundry. Because of the advantages of CMOS system-on-chip (SoC) technologies, the poly-Si NW biosensor is integrated with a chopper differential-difference amplifier (DDA) based analog-front-end (AFE), a successive approximation analog-to-digital converter (SAR ADC), and a microcontroller to have better sensing capabilities than a traditional Si NW discrete measuring system. In addition, an on-off key (OOK) wireless transceiver is also integrated to form a wireless bio-SSoC technology. This is pioneering work to harness the momentum of CMOS integrated technology into emerging bio-diagnosis technologies. This integrated technology is experimentally examined to have a label-free and low-concentration biomolecular detection for both Hepatitis B Virus DNA (10 fM) and cardiac troponin I protein (3.2 pM). Based on this work, the implemented wireless bio-SSoC has demonstrated a good biomolecular sensing characteristic and a potential for low-cost and mobile applications. As a consequence, this developed technology can be a promising candidate for on-field and personalized applications in biomedical diagnosis.

76 FR 63281 - Foreign-Trade Zone 78-Nashville, TN, Application for Subzone, Hemlock Semiconductor, L.L.C...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-10-12

... DEPARTMENT OF COMMERCE Foreign-Trade Zones Board [Docket 62-2011] Foreign-Trade Zone 78--Nashville, TN, Application for Subzone, Hemlock Semiconductor, L.L.C. (Polysilicon); Clarksville, TN An... polysilicon manufacturing facility of [[Page 63282

A hybrid life-cycle inventory for multi-crystalline silicon PV module manufacturing in China

NASA Astrophysics Data System (ADS)

Yao, Yuan; Chang, Yuan; Masanet, Eric

2014-11-01

China is the world’s largest manufacturer of multi-crystalline silicon photovoltaic (mc-Si PV) modules, which is a key enabling technology in the global transition to renewable electric power systems. This study presents a hybrid life-cycle inventory (LCI) of Chinese mc-Si PV modules, which fills a critical knowledge gap on the environmental implications of mc-Si PV module manufacturing in China. The hybrid LCI approach combines process-based LCI data for module and poly-silicon manufacturing plants with a 2007 China IO-LCI model for production of raw material and fuel inputs to estimate ‘cradle to gate’ primary energy use, water consumption, and major air pollutant emissions (carbon dioxide, methane, sulfur dioxide, nitrous oxide, and nitrogen oxides). Results suggest that mc-Si PV modules from China may come with higher environmental burdens that one might estimate if one were using LCI results for mc-Si PV modules manufactured elsewhere. These higher burdens can be reasonably explained by the efficiency differences in China’s poly-silicon manufacturing processes, the country’s dependence on highly polluting coal-fired electricity, and the expanded system boundaries associated with the hybrid LCI modeling framework. The results should be useful for establishing more conservative ranges on the potential ‘cradle to gate’ impacts of mc-Si PV module manufacturing for more robust LCAs of PV deployment scenarios.

Direct embryo tagging and identification system by attachment of biofunctionalized polysilicon barcodes to the zona pellucida of mouse embryos.

PubMed

Novo, Sergi; Penon, Oriol; Barrios, Leonardo; Nogués, Carme; Santaló, Josep; Durán, Sara; Gómez-Matínez, Rodrigo; Samitier, Josep; Plaza, José Antonio; Pérez-García, Luisa; Ibáñez, Elena

2013-06-01

Is the attachment of biofunctionalized polysilicon barcodes to the outer surface of the zona pellucida an effective approach for the direct tagging and identification of cultured embryos? The results achieved provide a proof of concept for a direct embryo tagging system using biofunctionalized polysilicon barcodes, which could help to minimize the risk of mismatching errors (mix-ups) in human assisted reproduction technologies. Even though the occurrence of mix-ups is rare, several cases have been reported in fertility clinics around the world. Measures to prevent the risk of mix-ups in human assisted reproduction technologies are therefore required. Mouse embryos were tagged with 10 barcodes and the effectiveness of the tagging system was tested during fresh in vitro culture (n=140) and after embryo cryopreservation (n = 84). Finally, the full-term development of tagged embryos was evaluated (n =105). Mouse pronuclear embryos were individually rolled over wheat germ agglutinin-biofunctionalized polysilicon barcodes to distribute them uniformly around the ZONA PELLUCIDA surface. Embryo viability and retention of barcodes were determined during 96 h of culture. The identification of tagged embryos was performed every 24 h in an inverted microscope and without embryo manipulation to simulate an automatic reading procedure. Full-term development of the tagged embryos was assessed after their transfer to pseudo-pregnant females. To test the validity of the embryo tagging system after a cryopreservation process, tagged embryos were frozen at the 2-cell stage using a slow freezing protocol, and followed in culture for 72 h after thawing. Neither the in vitro or in vivo development of tagged embryos was adversely affected. The tagging system also proved effective during an embryo cryopreservation process. Global identification rates higher than 96 and 92% in fresh and frozen-thawed tagged embryos, respectively, were obtained when simulating an automatic barcode reading system, although these rates could be increased to 100% by simply rotating the embryos during the reading process. The direct embryo tagging developed here has exclusively been tested in mouse embryos. Its effectiveness in other species, such as the human, is currently being tested. The direct embryo tagging system developed here, once tested in human embryos, could provide fertility clinics with a novel tool to reduce the risk of mix-ups in human assisted reproduction technologies.

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Integration of solid-state nanopores in a 0.5 μm cmos foundry process

PubMed Central

Uddin, A; Yemenicioglu, S; Chen, C-H; Corigliano, E; Milaninia, K; Theogarajan, L

2013-01-01

High-bandwidth and low-noise nanopore sensor and detection electronics are crucial in achieving single-DNA base resolution. A potential way to accomplish this goal is to integrate solid-state nanopores within a CMOS platform, in close proximity to the biasing electrodes and custom-designed amplifier electronics. Here we report the integration of solid-state nanopore devices in a commercial complementary metal-oxide semiconductor (CMOS) potentiostat chip implemented in On-Semiconductor’s 0.5 μm technology. Nanopore membranes incorporating electrodes are fabricated by post-CMOS micromachining utilizing the N+ polysilicon/SiO2/N+ polysilicon capacitor structure available in the aforementioned process. Nanopores are created in the CMOS process by drilling in a transmission electron microscope and shrinking by atomic layer deposition. We also describe a batch fabrication method to process a large of number of electrode-embedded nanopores with sub-10 nm diameter across CMOS-compatible wafers by electron beam lithography and atomic layer deposition. The CMOS-compatibility of our fabrication process is verified by testing the electrical functionality of on-chip circuitry. We observe high current leakage with the CMOS nanopore devices due to the ionic diffusion through the SiO2 membrane. To prevent this leakage, we coat the membrane with Al2O3 which acts as an efficient diffusion barrier against alkali ions. The resulting nanopore devices also exhibit higher robustness and lower 1/f noise as compared to SiO2 and SiNx. Furthermore, we propose a theoretical model for our low-capacitance CMOS nanopore devices, showing good agreement with the experimental value. In addition, experiments and theoretical models of translocation studies are presented using 48.5 kbp λ-DNA in order to prove the functionality of on-chip pores coated with Al2O3. PMID:23519330

Tapered polysilicon core fibers for nonlinear photonics.

PubMed

Suhailin, Fariza H; Shen, Li; Healy, Noel; Xiao, Limin; Jones, Maxwell; Hawkins, Thomas; Ballato, John; Gibson, Ursula J; Peacock, Anna C

2016-04-01

We propose and demonstrate a novel approach to obtaining small-core polysilicon waveguides from the silicon fiber platform. The fibers were fabricated via a conventional drawing tower method and, subsequently, tapered down to achieve silicon core diameters of ∼1  μm, the smallest optical cores for this class of fiber to date. Characterization of the material properties have shown that the taper process helps to improve the local crystallinity of the silicon core, resulting in a significant reduction in the material loss. By exploiting the combination of small cores and low losses, these tapered fibers have enabled the first observation of nonlinear transmission within a polycrystalline silicon waveguide of any type. As the fiber drawing method is highly scalable, it opens a route for the development of low-cost and flexible nonlinear silicon photonic systems.

Computer Aided Design of Integrated Circuit Fabrication Processes for VLSI Devices

DTIC Science & Technology

1980-01-01

diffusion coefficient and surface conc,,tration of the chlorine as well as any field present; X is related to the ratio ol the diffusion coefficient to...with polysilicon gat(. .ed contacts, the interaction of oxidation, segregation and diffusion in all regions of the simulation space is a critical

Low cost solar array project. Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

NASA Technical Reports Server (NTRS)

1980-01-01

Technical activities are reported in the design of process, facilities, and equipment for producing silicon at a rate and price comensurate with production goals for low cost solar cell modules. The silane-silicone process has potential for providing high purity poly-silicon on a commercial scale at a price of fourteen dollars per kilogram by 1986, (1980 dollars). Commercial process, economic analysis, process support research and development, and quality control are discussed.

Self-assembly micro optical filter

NASA Astrophysics Data System (ADS)

Zhang, Ping (Cerina); Le, Kevin; Malalur-Nagaraja-Rao, Smitha; Hsu, Lun-Chen; Chiao, J.-C.

2006-01-01

Optical communication and sensor industry face critical challenges in manufacturing for system integration. Due to the assembly complexity and integration platform variety, micro optical components require costly alignment and assembly procedures, in which many required manual efforts. Consequently, self-assembly device architectures have become a great interest and could provide major advantages over the conventional optical devices. In this paper, we discussed a self-assembly integration platform for micro optical components. To demonstrate the adaptability and flexibility of the proposed optical device architectures, we chose a commercially available MEMS fabrication foundry service - MUMPs (Multi-User MEMS Process). In this work, polysilicon layers of MUMPS are used as the 3-D structural material for construction of micro component framework and actuators. However, because the polysilicon has high absorption in the visible and near infrared wavelength ranges, it is not suitable for optical interaction. To demonstrate the required optical performance, hybrid integration of materials was proposed and implemented. Organic compound materials were applied on the silicon-based framework to form the required optical interfaces. Organic compounds provide good optical transparency, flexibility to form filters or lens and inexpensive manufacturing procedures. In this paper, we have demonstrated a micro optical filter integrated with self-assembly structures. We will discuss the self-assembly mechanism, optical filter designs, fabrication issues and results.

Study on the failure temperature of Ti/Pt/Au and Pt5Si2-Ti/Pt/Au metallization systems

NASA Astrophysics Data System (ADS)

Zhang, Jie; Han, Jianqiang; Yin, Yijun; Dong, Lizhen; Niu, Wenju

2017-09-01

The Ti/Pt/Au metallization system has an advantage of resisting KOH or TMAH solution etching. To form a good ohmic contact, the Ti/Pt/Au metallization system must be alloyed at 400 °C. However, the process temperatures of typical MEMS packaging technologies, such as anodic bonding, glass solder bonding and eutectic bonding, generally exceed 400 °C. It is puzzling if the Ti/Pt/Au system is destroyed during the subsequent packaging process. In the present work, the resistance of doped polysilicon resistors contacted by the Ti/Pt/Au metallization system that have undergone different temperatures and time are measured. The experimental results show that the ohmic contacts will be destroyed if heated to 500 °C. But if a 20 nm Pt film is sputtered on heavily doped polysilicon and alloyed at 700 °C before sputtering Ti/Pt/Au films, the Pt5Si2-Ti/Pt/Au metallization system has a higher service temperature of 500 °C, which exceeds process temperatures of most typical MEMS packaging technologies. Project supported by the National Natural Science Foundation of China (No. 61376114).

Mechanisms for fatigue and wear of polysilicon structural thinfilms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alsem, Daniel Henricus

2006-01-01

Fatigue and wear in micron-scale polysilicon structural films can severely impact the reliability of microelectromechanical systems (MEMS). Despite studies on fatigue and wear behavior of these films, there is still an on-going debate regarding the precise physical mechanisms for these two important failure modes. Although macro-scale silicon does not fatigue, this phenomenon is observed in micron-scale silicon. It is shown that for polysilicon devices fabricated in the MUMPs foundry and SUMMiT process stress-lifetime data exhibits similar trends in ambient air, shorter lifetimes in higher relative humidity environments and no fatigue failure at all in high vacuum. Transmission electron microscopy ofmore » the surface oxides of the samples show an approximate four-fold thickening of the oxide at stress concentrations after fatigue failure, but no thickening after fracture in air or after fatigue cycling in vacuo. It is found that such oxide thickening and fatigue failure (in air) occurs in devices with initial oxide thicknesses of ~4-20 nm. Such results are interpreted and explained by a reaction layer fatigue mechanism; specifically, moisture-assisted subcritical cracking within a cyclic stress-assisted thickened oxide layer occurs until the crack reaches a critical size to cause catastrophic failure. Polysilicon specimens from the SUMMiT process are used to study wear mechanisms in micron-scale silicon in ambient air. Worn parts are examined by analytical scanning and transmission electron microscopy, while temperature changes are monitored using infrared microscopy. These results are compared with the development of values of static coefficients of friction (COF) with number of wear cycles. Observations show amorphous debris particles (~50-100 nm) created by fracture through the silicon grains (~500 nm), which subsequently oxidize, agglomerate into clusters and create plowing tracks. A nano-crystalline layer (~20-200 nm) forms at worn regions. No dislocations or extreme temperature increases are found, ruling out plasticity and temperature-assisted mechanisms. The COF reaches a steady-state value of ~0.20±0.05 after a short time at an initial value of ~0.11±0.01. Plowing tracks are found before the steady-state value of the COF is reached, suggesting only a short adhesive wear regime. This suggests a predominantly abrasive wear mechanism, controlled by fracture, which commences by the first particles created by adhesive wear.« less

Mechanisms for fatigue and wear of polysilicon structural thin films

NASA Astrophysics Data System (ADS)

Alsem, Daniel Henricus

Fatigue and wear in micron-scale polysilicon structural films can severely impact the reliability of microelectromechanical systems (MEMS). Despite studies on fatigue and wear behavior of these films, there is still an on-going debate regarding the precise physical mechanisms for these two important failure modes. Although macro-scale silicon does not fatigue, this phenomenon is observed in micron-scale silicon. It is shown that for polysilicon devices fabricated in the MUMPs foundry and SUMMiT(TM) process stress-lifetime data exhibits similar trends in ambient air, shorter lifetimes in higher relative humidity environments and no fatigue failure at all in high vacuum. Transmission electron microscopy of the surface oxides of the samples show an approximate four-fold thickening of the oxide at stress concentrations after fatigue failure, but no thickening after fracture in air or after fatigue cycling in vacuo . It is found that such oxide thickening and fatigue failure (in air) occurs in devices with initial oxide thicknesses of ˜4-20 nm. Such results are interpreted and explained by a reaction-layer fatigue mechanism; specifically, moisture-assisted subcritical cracking within a cyclic stress-assisted thickened oxide layer occurs until the crack reaches a critical size to cause catastrophic failure. Polysilicon specimens from the SUMMiT(TM) process are used to study wear mechanisms in micron-scale silicon in ambient air. Worn parts are examined by analytical scanning and transmission electron microscopy, while temperature changes are monitored using infrared microscopy. These results are compared with the development of values of static coefficients of friction (COF) with number of wear cycles. Observations show amorphous debris particles (˜50-100 nm) created by fracture through the silicon grains (˜500 nm), which subsequently oxidize, agglomerate into clusters and create plowing tracks. A nano-crystalline layer (˜20-200 nm) forms at worn regions. No dislocations or extreme temperature increases are found, ruling out plasticity and temperature-assisted mechanisms. The COF reaches a steady-state value of ˜0.20+/-0.05 after a short time at an initial value of ˜0.11+/-0.01. Plowing tracks are found before the steady-state value of the COF is reached, suggesting only a short adhesive wear regime. This suggests a predominantly abrasive wear mechanism, controlled by fracture, which commences by the first particles created by adhesive wear.

Characterization and modeling of electrostatically actuated polysilicon micromechanical devices

NASA Astrophysics Data System (ADS)

Chan, Edward Keat Leem

Sensors, actuators, transducers, microsystems and MEMS (MicroElertroMechanical Systems) are some of the terms describing technologies that interface information processing systems with the physical world. Electrostatically actuated micromechanical devices are important building blocks in many of these technologies. Arrays of these devices are used in video projection displays, fluid pumping systems, optical communications systems, tunable lasers and microwave circuits. Well-calibrated simulation tools are essential for propelling ideas from the drawing board into production. This work characterizes a fabrication process---the widely-used polysilicon MUMPs process---to facilitate the design of electrostatically actuated micromechanical devices. The operating principles of a representative device---a capacitive microwave switch---are characterized using a wide range of electrical and optical measurements of test structures along with detailed electromechanical simulations. Consistency in the extraction of material properties from measurements of both pull-in voltage and buckling amplitude is demonstrated. Gold is identified as an area-dependent source of nonuniformity in polysilicon thicknesses and stress. Effects of stress gradients, substrate curvature, and film coverage are examined quantitatively. Using well-characterized beams as in-situ surface probes, capacitance-voltage and surface profile measurements reveal that compressible surface residue modifies the effective electrical gap when the movable electrode contacts an underlying silicon nitride layer. A compressible contact surface model used in simulations improves the fit to measurements. In addition, the electric field across the nitride causes charge to build up in the nitride, increasing the measured capacitance over time. The rate of charging corresponds to charge injection through direct tunneling. A novel actuator that can travel stably beyond one-third of the initial gap (a trademark limitation of conventional actuators) is demonstrated. A "folded capacitor" design, requiring only minimal modifications to the layout of conventional devices, reduces the parasitic capacitances and modes of deformation that limit performance. This device, useful for optical applications, can travel almost twice the conventional range before succumbing to a tilting instability.

MEMS: A new approach to micro-optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sniegowski, J.J.

1997-12-31

MicroElectroMechanical Systems (MEMS) and their fabrication technologies provide great opportunities for application to micro-optical systems (MOEMS). Implementing MOEMS technology ranges from simple, passive components to complicated, active systems. Here, an overview of polysilicon surface micromachining MEMS combined with optics is presented. Recent advancements to the technology, which may enhance its appeal for micro-optics applications are emphasized. Of all the MEMS fabrication technologies, polysilicon surface micromachining technology has the greatest basis in and leverages the most the infrastructure for silicon integrated circuit fabrication. In that respect, it provides the potential for very large volume, inexpensive production of MOEMS. This paper highlightsmore » polysilicon surface micromachining technology in regards to its capability to provide both passive and active mechanical elements with quality optical elements.« less

Large area polysilicon films with predetermined stress characteristics and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor); Phillips, Stephen M. (Inventor)

2002-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Radiation-hardened backside-illuminated 512 x 512 charge-coupled device

NASA Astrophysics Data System (ADS)

Bates, Philip A.; Levine, Peter A.; Sauer, Donald J.; Hsueh, Fu-Lung; Shallcross, Frank V.; Smeltzer, Ronald K.; Meray, Grazyna M.; Taylor, Gordon C.; Tower, John R.

1995-04-01

A four-port 512 X 512 charge coupled device (CCD) imager hardened against proton displacement damage and total dose degradation has been fabricated and tested. The device is based upon an established thinned, backside illuminated, triple polysilicon, buried channel CCD process technology. The technology includes buried blooming drains. A three step approach has been taken to hardening the device. The first phase addressed hardening against proton displacement damage. The second phase addressed hardening against both proton displacement damage and total dose degradation. The third phase addresses final optimization of the design. Test results from the first and second phase efforts are presented. Plans for the third phase are discussed.

Integration of Detectors with Optical Waveguide Structures.

DTIC Science & Technology

1983-05-15

OECLASSIFICATION/DOWNGRADING SCHEDULE ____ ___ ___ ___ __ ___ ____ ___ ___ ___ ___ ___ ___ None If. DISTRIBUTION STATEMNT (of Ole RepOr) Approved for public...The polysilicon gate of the depletion mode MOSFET is boron doped and it is covered by a thermally grown silicon dioxide layer on the top. of the... polysilicon electrode. The wafer then undergoes hydrogen annealing with 24 1/min. hydrogen at 10000C for 30 minutes. The boron impurities which are already

Gold-based electrical interconnections for microelectronic devices

DOEpatents

Peterson, Kenneth A.; Garrett, Stephen E.; Reber, Cathleen A.; Watson, Robert D.

2002-01-01

A method of making an electrical interconnection from a microelectronic device to a package, comprising ball or wedge compression bonding a gold-based conductor directly to a silicon surface, such as a polysilicon bonding pad in a MEMS or IMEMS device, without using layers of aluminum or titanium disposed in-between the conductor and the silicon surface. After compression bonding, optional heating of the bond above 363 C. allows formation of a liquid gold-silicon eutectic phase containing approximately 3% (by weight) silicon, which significantly improves the bond strength by reforming and enhancing the initial compression bond. The same process can be used for improving the bond strength of Au--Ge bonds by forming a liquid Au-12Ge eutectic phase.

Enhanced phonon scattering by nanovoids in high thermoelectric power factor polysilicon thin films

NASA Astrophysics Data System (ADS)

Dunham, Marc T.; Lorenzi, Bruno; Andrews, Sean C.; Sood, Aditya; Asheghi, Mehdi; Narducci, Dario; Goodson, Kenneth E.

2016-12-01

The ability to tune the thermal conductivity of semiconductor materials is of interest for thermoelectric applications, in particular, for doped silicon, which can be readily integrated in electronic microstructures and have a high thermoelectric power factor. Here, we examine the impact of nanovoids on the thermal conductivity of highly doped, high-power factor polysilicon thin films using time-domain thermoreflectance. Voids are formed through ion implantation and annealing, evolving from many small (˜4 nm mean diameter) voids after 500 °C anneal to fewer, larger (˜29 nm mean diameter) voids with a constant total volume fraction after staged thermal annealing to 1000 °C. The thermal conductivity is reduced to 65% of the non-implanted reference film conductivity after implantation and 500 °C anneal, increasing with anneal temperature until fully restored after 800 °C anneal. The void size distributions are determined experimentally using small-angle and wide-angle X-ray scattering. While we believe multiple physical mechanisms are at play, we are able to corroborate the positive correlation between measurements of thermal conductivity and void size with Monte Carlo calculations and a scattering probability based on Matthiessen's rule. The data suggest an opportunity for thermal conductivity suppression combined with the high power factor for increased material zT and efficiency of nanostructured polysilicon as a thermoelectric material.

In situ arsenic-doped polycrystalline silicon as a low thermal budget emitter contact for Si/Si1 - xGex heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

King, C. A.; Johnson, R. W.; Pinto, M. R.; Luftman, H. S.; Munanka, J.

1996-01-01

A low thermal budget emitter contact with low specific contact resistivity (ρc) with the absence of transient enhanced diffusion (TED) effects is essential to fabricate integratable high performance Si/SiGe heterojunction bipolar transistors (HBTs). We report the use of in situ As-doped polycrystalline silicon (polysilicon) from a low base pressure rapid thermal episystem for this purpose and find that it meets all the requirements. We used secondary ion mass spectrometry to find that 18 nm, heavily B-doped layers remain intact after implantation into the surface polysilicon and annealing at 800 °C for 40 s. Similar samples without the surface polylayer displayed extreme broadening of B profile. Kelvin crossbridge resistors together with 2D device simulations revealed that ρc is an extremely low value of 1.2×10-8 Ω cm2 in as-deposited material. Fabrication of simple 30×30 μm2 mesa isolated HBT devices showed IC to be more than two decades higher in devices with only an in situ As-doped polyemitter compared with devices that incorporated a surface implant into the single crystal portion of the emitter before polysilicon deposition. These results demonstrate that this doped polycrystalline silicon material is an excellent choice for emitter contacts to HBT devices.

Silicon material technology status. [assessment for electronic and photovoltaic applications

NASA Technical Reports Server (NTRS)

Lutwack, R.

1983-01-01

Silicon has been the basic element for the electronic and photovoltaic industries. The use of silicon as the primary element for terrestrial photovoltaic solar arrays is projected to continue. The reasons for this projection are related to the maturity of silicon technology, the ready availability of extremely pure silicon, the performance of silicon solar cells, and the considerable present investment in technology and manufacturing facilities. The technologies for producing semiconductor grade silicon and, to a lesser extent, refined metallurgical grade silicon are considered. It is pointed out that nearly all of the semiconductor grade silicon is produced by processes based on the Siemens deposition reactor, a technology developed 26 years ago. The state-of-the-art for producing silicon by this process is discussed. It is expected that efforts to reduce polysilicon process costs will continue.

Design and Characterization of Next-Generation Micromirrors Fabricated in a Four-Level, Planarized Surface-Micromachined Polycrystalline Silicon Process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Michalicek, M.A.; Comtois, J.H.; Barron, C.C.

This paper describes the design and characterization of several types of micromirror devices to include process capabilities, device modeling, and test data resulting in deflection versus applied potential curves. These micromirror devices are the first to be fabricated in the state-of-the-art four-level planarized polysilicon process available at Sandia National Laboratories known as the Sandia Ultra-planar Multi-level MEMS Technology (SUMMiT). This enabling process permits the development of micromirror devices with near-ideal characteristics which have previously been unrealizable in standard three-layer polysilicon processes. This paper describes such characteristics as elevated address electrodes, individual address wiring beneath the device, planarized mirror surfaces usingmore » Chemical Mechanical Polishing (CMP), unique post-process metallization, and the best active surface area to date. This paper presents the design, fabrication, modeling, and characterization of several variations of Flexure-Beam (FBMD) and Axial-Rotation Micromirror Devices (ARMD). The released devices are first metallized using a standard sputtering technique relying on metallization guards and masks that are fabricated next to the devices. Such guards are shown to enable the sharing of bond pads between numerous arrays of micromirrors in order to maximize the number of on-chip test arrays. The devices are modeled and then empirically characterized using a laser interferometer setup located at the Air Force Institute of Technology (AFIT) at Wright-Patterson AFB in Dayton, Ohio. Unique design considerations for these devices and the process are also discussed.« less

MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes

NASA Astrophysics Data System (ADS)

Jang, Munseon; Yun, Kwang-Seok

2017-12-01

In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100-400 kPa.

Capacitive micromachined ultrasonic transducers using commercial multi-user MUMPs process: capability and limitations

PubMed Central

Liu, Jessica; Oakley, Clyde; Shandas, Robin

2009-01-01

The objective of this work is to construct capacitive micromachined ultrasouind transducers (cMUTs) using multi-user MEMS (MicroElectroMechanical Systems) process (MUMPs) and to analyze the capability of this process relative to the customized processes commonly in use. The MUMPs process has the advantages of low cost and accessibility to general users since it is not necessary to have access to customized fabrication capability such as wafer-bonding and sacrificial release processes. While other researchers have reported fabricating cMUTs using the MUMPs process none has reported the limitations in the process that arise due to the use of standard design rules that place limitations on the material thicknesses, gap thicknesses, and materials that may be used. In this paper we explain these limitations, and analyze the capabilities using 1D modeling, Finite Element Analysis, and experimental devices. We show that one of the limitations is that collapse voltage and center frequency can not be controlled independently. However, center frequencies up to 9 MHz can be achieved with collapse voltages of less than 200 volts making such devices suitable for medical and non-destructive evaluation imaging applications. Since the membrane and base electrodes are made of polysilicon, there is a larger series resistance than that resulting from processes that use metal electrodes. We show that the series resistance is not a significant problem. The conductive polysilicon can also destroy the cMUT if the top membrane is pulled in the bottom. As a solution we propose the application of an additional dielectric layer. Finally we demonstrate a device built with a novel beam construction that produces transmitted pressure pulse into air with 6% bandwidth and agrees reasonably well with the 1D model. We conclude that cMUTS made with MUMPS process have some limitations that are not present in customized processes. However these limitations may be overcome with the proper design considerations that we have presented putting a low cost, highly accessible means of making cMUT devices into the hands of academic and industrial researchers. PMID:19640557

Integration of solid-state nanopores in a 0.5 μm CMOS foundry process.

PubMed

Uddin, A; Yemenicioglu, S; Chen, C-H; Corigliano, E; Milaninia, K; Theogarajan, L

2013-04-19

High-bandwidth and low-noise nanopore sensor and detection electronics are crucial in achieving single-DNA-base resolution. A potential way to accomplish this goal is to integrate solid-state nanopores within a CMOS platform, in close proximity to the biasing electrodes and custom-designed amplifier electronics. Here we report the integration of solid-state nanopore devices in a commercial complementary metal-oxide-semiconductor (CMOS) potentiostat chip implemented in On-Semiconductor's 0.5 μm technology. Nanopore membranes incorporating electrodes are fabricated by post-CMOS micromachining utilizing the n+ polysilicon/SiO2/n+ polysilicon capacitor structure available in the aforementioned process. Nanopores are created in the CMOS process by drilling in a transmission electron microscope and shrinking by atomic layer deposition. We also describe a batch fabrication method to process a large of number of electrode-embedded nanopores with sub-10 nm diameter across CMOS-compatible wafers by electron beam lithography and atomic layer deposition. The CMOS-compatibility of our fabrication process is verified by testing the electrical functionality of on-chip circuitry. We observe high current leakage with the CMOS nanopore devices due to the ionic diffusion through the SiO2 membrane. To prevent this leakage, we coat the membrane with Al2O3, which acts as an efficient diffusion barrier against alkali ions. The resulting nanopore devices also exhibit higher robustness and lower 1/f noise as compared to SiO2 and SiNx. Furthermore, we propose a theoretical model for our low-capacitance CMOS nanopore devices, showing good agreement with the experimental value. In addition, experiments and theoretical models of translocation studies are presented using 48.5 kbp λ-DNA in order to prove the functionality of on-chip pores coated with Al2O3.

Release Resistant Electrical Interconnections For Mems Devices

DOEpatents

Peterson, Kenneth A.; Garrett, Stephen E.; Reber, Cathleen A.

2005-02-22

A release resistant electrical interconnection comprising a gold-based electrical conductor compression bonded directly to a highly-doped polysilicon bonding pad in a MEMS, IMEMS, or MOEMS device, without using any intermediate layers of aluminum, titanium, solder, or conductive adhesive disposed in-between the conductor and polysilicon pad. After the initial compression bond has been formed, subsequent heat treatment of the joint above 363 C creates a liquid eutectic phase at the bondline comprising gold plus approximately 3 wt % silicon, which, upon re-solidification, significantly improves the bond strength by reforming and enhancing the initial bond. This type of electrical interconnection is resistant to chemical attack from acids used for releasing MEMS elements (HF, HCL), thereby enabling the use of a "package-first, release-second" sequence for fabricating MEMS devices. Likewise, the bond strength of an Au--Ge compression bond may be increased by forming a transient liquid eutectic phase comprising Au-12 wt % Ge.

Design, Simulation and Characteristics Research of the Interface Circuit based on nano-polysilicon thin films pressure sensor

NASA Astrophysics Data System (ADS)

Zhao, Xiaosong; Zhao, Xiaofeng; Yin, Liang

2018-03-01

This paper presents a interface circuit for nano-polysilicon thin films pressure sensor. The interface circuit includes consist of instrument amplifier and Analog-to-Digital converter (ADC). The instrumentation amplifier with a high common mode rejection ratio (CMRR) is implemented by three stages current feedback structure. At the same time, in order to satisfy the high precision requirements of pressure sensor measure system, the 1/f noise corner of 26.5 mHz can be achieved through chopping technology at a noise density of 38.2 nV/sqrt(Hz).Ripple introduced by chopping technology adopt continuous ripple reduce circuit (RRL), which achieves the output ripple level is lower than noise. The ADC achieves 16 bits significant digit by adopting sigma-delta modulator with fourth-order single-bit structure and digital decimation filter, and finally achieves high precision integrated pressure sensor interface circuit.

Princeton VLSI Project.

DTIC Science & Technology

1983-01-01

polysilicon wires in gateleft and laterighi, which will be connected together if both exist. The dimensions of the transistor are determined by the maximum...be implanted. Any wire parameters having layers other than polysilicon or diffusion will be electrically connected to one another over the transistor...Jan 19 ś a’:’> ., , fcr example PLA s and precharged 2-1, (do- : CV O. lHop The implementtional d( :a., of the mod;,ied gates and circuitrv for OL 5

Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

NASA Astrophysics Data System (ADS)

Jain, Geetika; Dalal, Ranjeet; Bhardwaj, Ashutosh; Ranjan, Kirti; Dierlamm, Alexander; Hartmann, Frank; Eber, Robert; Demarteau, Marcel

2018-02-01

P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 μm and strip pitch of 55 μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Ω cm, with a thickness of 300 μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

Caracterisation electrique et vieillissement de resistances de silicium polycristallin modifiees par laser

NASA Astrophysics Data System (ADS)

Fantoni, Julie

2011-12-01

Several classes of integrated microelectronic circuits require highly precise and stable analog components that cannot be obtained directly through standard CMOS fabrication processes. Those components must thus be calibrated either by a modification of the fabrication process or by the application of a post-fabrication tuning procedure. Many successful post-fabrication tuning processes have been introduced in the field of resistor calibration, including resistor laser trimming which is the core subject of this thesis. In this thesis, trimmed components are standard CMOS 180nm technology polysilicon resistors, integrated in circuits specially designed to allow laser intervention on their surface. The laser used is a nanosecond pulsed laser for which the fluence is set below the melting threshold of polysilicon in order to prevent damage to the material structure. This novel low-power highly localized procedure reduces the risk of damaging sensitive surrounding circuits and requires no additional fabrication step, allowing smaller dies areas and reduced costs. Precise, reliable and reproducible devices have been tuned using this technique with a precision below 500 ppm. The main objective of this research is to study and analyze the effect of the laser parameters variation on the trimmed component properties and to optimize those parameters in regard of the desired precision and stability of the final product. Raman spectroscopic measurements are performed to observe and characterize structural modifications of the polysilicon material following laser irradiation as precise resistance measurements and standardized in-oven aging tests allow the complete characterization of the device in regard of precision and stability. It is shown that for a given precision, this novel low-power trimming technique produces devices with a stability comparable to those obtained with another trimming technology such as the pulsed current method. An electrical model is also developed to predict the resistance modification with the laser fluence, the number of pulses as well as the duration of those pulses. The model is shown to be 1 500 ppm accurate when laser fluence is set accordingly to the melting threshold of polysilicon. Concerning stability, results show that, following a 300 h, 150 °C aging procedure, laser trimmed components present a 1.2% resistance drift from their initial resistance value whereas a 0.7% drift is observed on untrimmed samples. Those results are comparable to those obtained with the pulsed current trimming technique which produces trimmed component with a 1% resistance drift following a 200 h 162 °C aging procedure. Recommendations are given in the conclusion as to which laser parameters to modify and how to modify them in order to produce the desired trimmed devices with the best performance possible.

Carbohydrate-Assisted Combustion Synthesis To Realize High-Performance Oxide Transistors.

PubMed

Wang, Binghao; Zeng, Li; Huang, Wei; Melkonyan, Ferdinand S; Sheets, William C; Chi, Lifeng; Bedzyk, Michael J; Marks, Tobin J; Facchetti, Antonio

2016-06-08

Owing to high carrier mobilities, good environmental/thermal stability, excellent optical transparency, and compatibility with solution processing, thin-film transistors (TFTs) based on amorphous metal oxide semiconductors (AOSs) are promising alternatives to those based on amorphous silicon (a-Si:H) and low-temperature (<600 °C) poly-silicon (LTPS). However, solution-processed display-relevant indium-gallium-tin-oxide (IGZO) TFTs suffer from low carrier mobilities and/or inferior bias-stress stability versus their sputtered counterparts. Here we report that three types of environmentally benign carbohydrates (sorbitol, sucrose, and glucose) serve as especially efficient fuels for IGZO film combustion synthesis to yield high-performance TFTs. The results indicate that these carbohydrates assist the combustion process by lowering the ignition threshold temperature and, for optimal stoichiometries, enhancing the reaction enthalpy. IGZO TFT mobilities are increased to >8 cm(2) V(-1) s(-1) on SiO2/Si gate dielectrics with significantly improved bias-stress stability. The first correlations between precursor combustion enthalpy and a-MO densification/charge transport are established.

Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

NASA Astrophysics Data System (ADS)

Consiglio, Steven P.

To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of the properties of conductive HfN grown via plasma-assisted atomic layer deposition (PA-ALD) using tetrakis(ethylmethylamido)hafnium on a modified commercially available wafer processing tool. Key properties of these materials for use as gate stack replacement materials are addressed and future directions for further characterization and novel material investigations are proposed.

System Dynamics of Polysilicon for Solar Photovoltaics: A Framework for Investigating the Energy Security of Renewable Energy Supply Chains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sandor, Debra; Fulton, Sadie; Engel-Cox, Jill

Renewable energy, produced with widely available low-cost energy resources, is often included as a component of national strategies to address energy security and sustainability. Market and political forces cannot disrupt the sun or wind, unlike oil and gas supplies. However, the cost of renewable energy is highly dependent on technologies manufactured through global supply chains in leading manufacturing countries. The countries that contribute to the global supply chains may take actions that, directly or indirectly, influence global access to materials and components. For example, high-purity polysilicon, a key material in solar photovoltaics, has experienced significant price fluctuations, affecting the manufacturingmore » capacity and cost of both polysilicon and solar panels. This study has developed and validated an initial system dynamics framework to gain insights into global trade in polysilicon. The model represents an initial framework for exploration. Three regions were modeled-China, the United States, and the rest of the world - for a range of trade scenarios to understand the impacts of import duties and non-price drivers on the relative volumes of imports and domestic supply. The model was validated with the historical case of China imposing an import duty on polysilicon from the United States, the European Union, and South Korea, which altered the regional flows of polysilicon - in terms of imports, exports, and domestic production-to varying degrees. As expected, the model tracked how regional demand shares and influx volumes decrease as a duty on a region increases. Using 2016 as a reference point, in the scenarios examined for U.S. exports to China, each 10% increase in the import duty results in a 40% decrease in import volume. The model also indicates that, under the scenarios investigated, once a duty has been imposed on a region, the demand share from that region declines and does not achieve pre-duty levels, even as global demand increases. Adding additional countries and other components in the photovoltaic supply chain (panels, cells, wafers) to this model could enable policymakers to better understand the relative impact of trade measures across the entire photovoltaic module manufacturing supply chain and the conditions that encourage industry evolution and competitiveness.« less

System Dynamics of Polysilicon for Solar Photovoltaics: A Framework for Investigating the Energy Security of Renewable Energy Supply Chains

DOE PAGES

Sandor, Debra; Fulton, Sadie; Engel-Cox, Jill; ...

2018-01-11

Renewable energy, produced with widely available low-cost energy resources, is often included as a component of national strategies to address energy security and sustainability. Market and political forces cannot disrupt the sun or wind, unlike oil and gas supplies. However, the cost of renewable energy is highly dependent on technologies manufactured through global supply chains in leading manufacturing countries. The countries that contribute to the global supply chains may take actions that, directly or indirectly, influence global access to materials and components. For example, high-purity polysilicon, a key material in solar photovoltaics, has experienced significant price fluctuations, affecting the manufacturingmore » capacity and cost of both polysilicon and solar panels. This study has developed and validated an initial system dynamics framework to gain insights into global trade in polysilicon. The model represents an initial framework for exploration. Three regions were modeled-China, the United States, and the rest of the world - for a range of trade scenarios to understand the impacts of import duties and non-price drivers on the relative volumes of imports and domestic supply. The model was validated with the historical case of China imposing an import duty on polysilicon from the United States, the European Union, and South Korea, which altered the regional flows of polysilicon - in terms of imports, exports, and domestic production-to varying degrees. As expected, the model tracked how regional demand shares and influx volumes decrease as a duty on a region increases. Using 2016 as a reference point, in the scenarios examined for U.S. exports to China, each 10% increase in the import duty results in a 40% decrease in import volume. The model also indicates that, under the scenarios investigated, once a duty has been imposed on a region, the demand share from that region declines and does not achieve pre-duty levels, even as global demand increases. Adding additional countries and other components in the photovoltaic supply chain (panels, cells, wafers) to this model could enable policymakers to better understand the relative impact of trade measures across the entire photovoltaic module manufacturing supply chain and the conditions that encourage industry evolution and competitiveness.« less

Microfabricated electrochemiluminescence cell for chemical reaction detection

DOEpatents

Northrup, M. Allen; Hsueh, Yun-Tai; Smith, Rosemary L.

2003-01-01

A detector cell for a silicon-based or non-silicon-based sleeve type chemical reaction chamber that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The detector cell is an electrochemiluminescence cell constructed of layers of silicon with a cover layer of glass, with spaced electrodes located intermediate various layers forming the cell. The cell includes a cavity formed therein and fluid inlets for directing reaction fluid therein. The reaction chamber and detector cell may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The ECL cell may also be used in synthesis instruments, particularly those for DNA amplification and synthesis.

Surface micromachined MEMS deformable mirror based on hexagonal parallel-plate electrostatic actuator

NASA Astrophysics Data System (ADS)

Ma, Wenying; Ma, Changwei; Wang, Weimin

2018-03-01

Deformable mirrors (DM) based on microelectromechanical system (MEMS) technology are being applied in adaptive optics (AO) system for astronomical telescopes and human eyes more and more. In this paper a MEMS DM with hexagonal actuator is proposed and designed. The relationship between structural design and performance parameters, mainly actuator coupling, is analyzed carefully and calculated. The optimum value of actuator coupling is obtained. A 7-element DM prototype is fabricated using a commercial available standard three-layer polysilicon surface multi-user-MEMS-processes (PolyMUMPs). Some key performances, including surface figure and voltage-displacement curve, are measured through a 3D white light profiler. The measured performances are very consistent with the theoretical values. The proposed DM will benefit the miniaturization of AO systems and lower their cost.

Design principles for high efficiency small-grain polysilicon solar cells, with supporting experimental studies

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Neugroschel, A.; Sah, C. T.

1982-01-01

Design principles suggested here aim toward high conversion efficiency (greater than 15 percent) in polysilicon cells. The principles seek to decrease the liabilities of both intragranular and grain-boundary-surface defects. The advantages of a phosphorus atom concentration gradient in a thin (less than 50 microns) base of a p(+)/n(x)/n(+) drift-field solar cell, which produces favorable gradients in chemical potential, minority-carrier mobility and diffusivity, and recombination lifetime (via phosphorus gettering) are suggested. The degrading effects of grain boundaries are reduced by these three gradients and by substituting atoms (P, H, F or Li) for vacancies on the grain-boundary surface. From recent experiments comes support for the benefits of P diffusion down grain boundaries and, for quasi-grain-boundary-free and related structures. New analytic solutions for the n(x)-base include the effect of a power-law dependence between P concentration and lifetime. These provide an upper-bound estimate on the open circuit voltage. Finite-difference numerical solutions of the six Shockley equations furnish complete information about all solar-cell parameters and add insight concerning design.

Solar technology assessment project. Volume 6: Photovoltaic technology assessment

NASA Astrophysics Data System (ADS)

Backus, C. E.

1981-04-01

Industrial production of photovoltaic systems and volume of sales are reviewed. Low cost silicon production techniques are reviewed, including the Czochralski process, heat exchange method, edge defined film fed growth, dentritic web growth, and silicon on ceramic process. Semicrystalline silicon, amorphous silicon, and low cost poly-silicon are discussed as well as advanced materials and concentrator systems. Balance of system components beyond those needed to manufacture the solar panels are included. Nontechnical factors are assessed. The 1986 system cost goals are briefly reviewed.

Proceedings of the 21st Project Integration Meeting

NASA Technical Reports Server (NTRS)

1983-01-01

Progress made by the Flat Plate Solar Array Project during the period April 1982 to January 1983 is described. Reports on polysilicon refining, thin film solar cell and module technology development, central station electric utility activities, silicon sheet growth and characteristics, advanced photovoltaic materials, cell and processes research, module technology, environmental isolation, engineering sciences, module performance and failure analysis and project analysis and integration are included.

Integrated Silicon Carbide Power Electronic Block

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radhakrishnan, Rahul

2017-11-07

Research involved in this project is aimed at monolithically integrating an anti-parallel diode to the SiC MOSFET switch, so as to avoid having to use an external anti-parallel diode in power circuit applications. SiC MOSFETs are replacing Si MOSFETs and IGBTs in many applications, yet the high bandgap of the body diode in SiC MOSFET and consequent need for an external anti-parallel diode increases costs and discourages circuit designers from adopting this technology. Successful demonstration and subsequent commercialization of this technology would reduce SiC MOSFET cost and additionally reduce component count as well as other costs at the power circuitmore » level. In this Phase I project, we have created multiple device designs, set up a process for device fabrication at the 150mm SiC foundry XFAB Texas, demonstrated unit-processes for device fabrication in short loops and started full flow device fabrication. Key findings of the development activity were: The limits of coverage of photoresist over the topology of thick polysilicon structures covered with oxide, which required larger feature dimensions to overcome; and The insufficient process margin for removing oxide spacers from polysilicon field ring features which could result in loss of some features without further process development No fundamental obstacles were uncovered during the process development. Given sufficient time for additional development it is likely that processes could be tuned to realize the monolithically integrated SiC JBS diode and MOSFET. Sufficient funds were not available in this program to resolve processing difficulties and fabricate the devices.« less

Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies

NASA Astrophysics Data System (ADS)

Quevedo Lopez, Manuel Angel

Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050°C), it is important to understand the diffusion properties of any metal associated with the gate dielectric in silicon at these temperatures. In addition, dopant penetration from the doped polysilicon gate into the Si channel at these temperatures must also be studied. Impurity outdiffusion (Hf, Zr) from the dielectric, or dopant (B, As, P) penetration through the dielectric into the channel region would likely result in deleterious effects upon the carrier mobility. In this dissertation extensive thermal stability studies of alternate gate dielectric candidates ZrSixOy and HfSixO y are presented. Dopant penetration studies from doped-polysilicon through HfSixOy and HfSixOyNz are also presented. Rutherford Backscattering Spectroscopy (RBS), Heavy Ion RBS (HI-RBS), X-ray Photoelectron Spectroscopy (XPS), High Resolution Transmission Electron Microscopy (HR-TEM), and Time of Flight and Dynamic Secondary Ion Mass Spectroscopy (ToF-SIMS, D-SIMS) methods were used to characterize these materials. The dopant diffusivity is calculated by modeling of the dopant profiles in the Si substrate. In this disseration is reported that Hf silicate films are more stable than Zr silicate films, from the metal interdiffusion point of view. On the other hand, dopant (B, As, and P) penetration is observed for HfSixO y films. However, the addition of nitrogen to the Hf - Si - O systems improves the dopant penetration properties of the resulting HfSi xOyNz films.

An all-silicon single-wafer micro-g accelerometer with a combined surface and bulk micromachining process

NASA Technical Reports Server (NTRS)

Yazdi, N.; Najafi, K.

2000-01-01

This paper reports an all-silicon fully symmetrical z-axis micro-g accelerometer that is fabricated on a single-silicon wafer using a combined surface and bulk fabrication process. The microaccelerometer has high device sensitivity, low noise, and low/controllable damping that are the key factors for attaining micro g and sub-micro g resolution in capacitive accelerometers. The microfabrication process produces a large proof mass by using the whole wafer thickness and a large sense capacitance by utilizing a thin sacrificial layer. The sense/feedback electrodes are formed by a deposited 2-3 microns polysilicon film with embedded 25-35 microns-thick vertical stiffeners. These electrodes, while thin, are made very stiff by the thick embedded stiffeners so that force rebalancing of the proof mass becomes possible. The polysilicon electrodes are patterned to create damping holes. The microaccelerometers are batch-fabricated, packaged, and tested successfully. A device with a 2-mm x 1-mm proof mass and a full bridge support has a measured sensitivity of 2 pF/g. The measured sensitivity of a 4-mm x 1-mm accelerometer with a cantilever support is 19.4 pF/g. The calculated noise floor of these devices at atmosphere are 0.23 micro g/sqrt(Hz) and 0.16 micro g/sqrt(Hz), respectively.

Improved Design of Optical MEMS Using the SUMMiT Fabrication Process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Michalicek, M.A.; Comtois, J.H.; Barron, C.C.

This paper describes the design and fabrication of optical Microelectromechanical Systems (MEMS) devices using the Sandia Ultra planar Multilevel MEMS Technology (SUMMiT) fabrication process. This state of the art process, offered by Sandia National Laboratories, provides unique and very advantageous features which make it ideal for optical devices. This enabling process permits the development of micromirror devices with near ideal characteristics which have previously been unrealizable in standard polysilicon processes. This paper describes such characteristics as elevated address electrodes, individual address wiring beneath the device, planarized mirror surfaces, unique post-process metallization, and the best active surface area to date.

Computer Modeling of Complete IC Fabrication Process.

DTIC Science & Technology

1984-01-01

Venson Shaw 10. C. S. Chang 11. Elizabeth Batson 12. Richard Pinto 13. Jacques Beauduoin SPEAKERS: 1. Tayo Akinwande 2. Dimitri Antoniadis 3. Walter...Numerical Model of Polysilicon Emitter Contacts in Bipolar Transistors,’ To be published IEEE Trans. Electron Devices. [34] M. R. Pinto , R. W. Dutton...Received PhD, Spring 1082) Balaji Swaminathan (Received PhD, Spring 1983) Len Mei Research Associate Michael Kump Research Assistant Mark Pinto Research

Silicon-based sleeve devices for chemical reactions

DOEpatents

Northrup, M. Allen; Mariella, Jr., Raymond P.; Carrano, Anthony V.; Balch, Joseph W.

1996-01-01

A silicon-based sleeve type chemical reaction chamber that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis.

Silicon-based sleeve devices for chemical reactions

DOEpatents

Northrup, M.A.; Mariella, R.P. Jr.; Carrano, A.V.; Balch, J.W.

1996-12-31

A silicon-based sleeve type chemical reaction chamber is described that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis. 32 figs.

New test structures and techniques for measurement of mechanical properties of MEMS materials

NASA Astrophysics Data System (ADS)

Sharpe, William N., Jr.; Yuan, Bin; Vaidyanathan, Ranji; Edwards, Richard L.

1996-09-01

This paper presents techniques and procedures for addressing the three major problems of mechanical testing of the thin films used in surface micromachined microelectromechanical systems--specimen handling, friction, and strain measurement. The polysilicon tensile specimens are fabricated with two supporting side strips on silicon wafers at the Microelectronic Center of North Carolina. The tensile specimen is released by etching away the wafer, and the two support strips are cut after the specimen is glued in the test machine. Friction is reduced by a linear air bearing in the load train, and strain is measured with a noncontacting technique based on laser interferometry between two gold lines on the tensile specimen. The Young's modulus of polysilicon is 170 +/- 7 GPa and the strength is 1.21 +/- 0.16 GPa from a series of 29 tests. preliminary measurements have been made of Poisson's ratio and the fatigue behavior, and an attempt is underway to measure the fracture toughness.

Reconfigurable mask for adaptive coded aperture imaging (ACAI) based on an addressable MOEMS microshutter array

NASA Astrophysics Data System (ADS)

McNie, Mark E.; Combes, David J.; Smith, Gilbert W.; Price, Nicola; Ridley, Kevin D.; Brunson, Kevin M.; Lewis, Keith L.; Slinger, Chris W.; Rogers, Stanley

2007-09-01

Coded aperture imaging has been used for astronomical applications for several years. Typical implementations use a fixed mask pattern and are designed to operate in the X-Ray or gamma ray bands. More recent applications have emerged in the visible and infra red bands for low cost lens-less imaging systems. System studies have shown that considerable advantages in image resolution may accrue from the use of multiple different images of the same scene - requiring a reconfigurable mask. We report on work to develop a novel, reconfigurable mask based on micro-opto-electro-mechanical systems (MOEMS) technology employing interference effects to modulate incident light in the mid-IR band (3-5μm). This is achieved by tuning a large array of asymmetric Fabry-Perot cavities by applying an electrostatic force to adjust the gap between a moveable upper polysilicon mirror plate supported on suspensions and underlying fixed (electrode) layers on a silicon substrate. A key advantage of the modulator technology developed is that it is transmissive and high speed (e.g. 100kHz) - allowing simpler imaging system configurations. It is also realised using a modified standard polysilicon surface micromachining process (i.e. MUMPS-like) that is widely available and hence should have a low production cost in volume. We have developed designs capable of operating across the entire mid-IR band with peak transmissions approaching 100% and high contrast. By using a pixelated array of small mirrors, a large area device comprising individually addressable elements may be realised that allows reconfiguring of the whole mask at speeds in excess of video frame rates.

A novel fast and flexible technique of radical kinetic behaviour investigation based on pallet for plasma evaluation structure and numerical analysis

NASA Astrophysics Data System (ADS)

Malinowski, Arkadiusz; Takeuchi, Takuya; Chen, Shang; Suzuki, Toshiya; Ishikawa, Kenji; Sekine, Makoto; Hori, Masaru; Lukasiak, Lidia; Jakubowski, Andrzej

2013-07-01

This paper describes a new, fast, and case-independent technique for sticking coefficient (SC) estimation based on pallet for plasma evaluation (PAPE) structure and numerical analysis. Our approach does not require complicated structure, apparatus, or time-consuming measurements but offers high reliability of data and high flexibility. Thermal analysis is also possible. This technique has been successfully applied to estimation of very low value of SC of hydrogen radicals on chemically amplified ArF 193 nm photoresist (the main goal of this study). Upper bound of our technique has been determined by investigation of SC of fluorine radical on polysilicon (in elevated temperature). Sources of estimation error and ways of its reduction have been also discussed. Results of this study give an insight into the process kinetics, and not only they are helpful in better process understanding but additionally they may serve as parameters in a phenomenological model development for predictive modelling of etching for ultimate CMOS topography simulation.

Permanent and Transient Radiation Effects on Thin-Oxide (200-A) MOS Transistors

DTIC Science & Technology

1976-06-01

n-channel technology using a SiO, gate-oxide thickness ol ’ 200 A and a %hallow phiosphorus diffusion of 0.5 pin on a 0.7-ohm)-cmn 8-doped > Si...substrate. The thickness of the sell-aligned it polysilicon gate was kept at 3500 A. The oxide was grown in dry 0, at a temperature ot 1000C, followed...semiconductor work function difference (equal to 0 V for the polysilicon gates’ studied here). The effect of the ionizing radiation is to introduce

Non-Invasive Monitoring for Optimization of Therapeutic Drug Delivery by Biodegradable Fiber to Prostate Tumor

DTIC Science & Technology

2008-02-01

v ol um e (c m ^3 ) Injection Internal pump External Pump Treatment starts Rat’s condition before treatment 0 0.2 0.4 0.6 0.8 1 550 650...of polysilicon thermal flexure actuator,” J. of Micromechanics and Microengineering.9, 2005. [36] A. Grayson, et.al., “Electronic MEMS for...36. [59] Q-H. Huang and N. K. S. Lee, “Analysis and design of polysilicon thermal flexure actuator,” J. Micromech. Microeng. 9 (1) pp. 64–70 (1999

Synthetic Lubricating Oil Greases Containing Metal Chelates of Schiff Bases

DTIC Science & Technology

1992-09-15

bearing tester. The data generated from the test is pres- . ol Oil/10rs•al~s okfa, otl/ i.03 - ented in Table il1. cloy Thicsed Grews TABLE MI +3% aeys...groups having I to 6 hydrocarbons. the polysilicones . the siloxanes e.g. sili- carbon atoms and X is a number rankbing from I to 12. cone esters, the

Micromechanical Signal Processors

NASA Astrophysics Data System (ADS)

Nguyen, Clark Tu-Cuong

Completely monolithic high-Q micromechanical signal processors constructed of polycrystalline silicon and integrated with CMOS electronics are described. The signal processors implemented include an oscillator, a bandpass filter, and a mixer + filter--all of which are components commonly required for up- and down-conversion in communication transmitters and receivers, and all of which take full advantage of the high Q of micromechanical resonators. Each signal processor is designed, fabricated, then studied with particular attention to the performance consequences associated with miniaturization of the high-Q element. The fabrication technology which realizes these components merges planar integrated circuit CMOS technologies with those of polysilicon surface micromachining. The technologies are merged in a modular fashion, where the CMOS is processed in the first module, the microstructures in a following separate module, and at no point in the process sequence are steps from each module intermixed. Although the advantages of such modularity include flexibility in accommodating new module technologies, the developed process constrained the CMOS metallization to a high temperature refractory metal (tungsten metallization with TiSi _2 contact barriers) and constrained the micromachining process to long-term temperatures below 835^circC. Rapid-thermal annealing (RTA) was used to relieve residual stress in the mechanical structures. To reduce the complexity involved with developing this merged process, capacitively transduced resonators are utilized. High-Q single resonator and spring-coupled micromechanical resonator filters are also investigated, with particular attention to noise performance, bandwidth control, and termination design. The noise in micromechanical filters is found to be fairly high due to poor electromechanical coupling on the micro-scale with present-day technologies. Solutions to this high series resistance problem are suggested, including smaller electrode-to-resonator gaps to increase the coupling capacitance. Active Q-control techniques are demonstrated which control the bandwidth of micromechanical filters and simulate filter terminations with little passband distortion. Noise analysis shows that these active techniques are relatively quiet when compared with other resistive techniques. Modulation techniques are investigated whereby a single resonator or a filter constructed from several such resonators can provide both a mixing and a filtering function, or a filtering and amplitude modulation function. These techniques center around the placement of a carrier signal on the micromechanical resonator. Finally, micro oven stabilization is investigated in an attempt to null the temperature coefficient of a polysilicon micromechanical resonator. Here, surface micromachining procedures are utilized to fabricate a polysilicon resonator on a microplatform--two levels of suspension--equipped with heater and temperature sensing resistors, which are then imbedded in a feedback loop to control the platform (and resonator) temperature. (Abstract shortened by UMI.).

Improvement in performance and reliability with CF4 plasma pretreatment on the buffer oxide layer for low-temperature polysilicon thin-film transistor

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yi-Yan; Yang, Chun-Chieh

2012-03-01

This study applies CF4 plasma pretreatment to a buffer oxide layer to improve the performance of low-temperature polysilicon thin-film transistors (LTPS TFTs). Results show that the fluorine atoms piled up at the interface between the bulk channel and buffer oxide layer and accumulated in the bulk channel. The reduction of the trap states density by fluorine passivation can improve the electrical characteristics of the LTPS TFTs. It is found that the threshold voltage reduced from 4.32 to 3.03 V and the field-effect mobility increased from 29.71 to 45.65 cm2 V-1 S-1. In addition, the on current degradation and threshold voltage shift after stressing were significantly improved about 31% and 70%, respectively. We believe that the proposed CF4 plasma pretreatment on the buffer oxide layer can passivate the trap states and avoid the plasma induced damage on the polysilicon channel surface, resulting in the improvement in performance and reliability for LTPS-TFT mass production application on AMOLED displays with critical reliability requirement.

Photoresist removal using gaseous sulfur trioxide cleaning technology

NASA Astrophysics Data System (ADS)

Del Puppo, Helene; Bocian, Paul B.; Waleh, Ahmad

1999-06-01

A novel cleaning method for removing photoresists and organic polymers from semiconductor wafers is described. This non-plasma method uses anhydrous sulfur trioxide gas in a two-step process, during which, the substrate is first exposed to SO3 vapor at relatively low temperatures and then is rinsed with de-ionized water. The process is radically different from conventional plasma-ashing methods in that the photoresist is not etched or removed during the exposure to SO3. Rather, the removal of the modified photoresist takes place during the subsequent DI-water rinse step. The SO3 process completely removes photoresist and polymer residues in many post-etch applications. Additional advantages of the process are absence of halogen gases and elimination of the need for other solvents and wet chemicals. The process also enjoys a very low cost of ownership and has minimal environmental impact. The SEM and SIMS surface analysis results are presented to show the effectiveness of gaseous SO3 process after polysilicon, metal an oxide etch applications. The effects of both chlorine- and fluorine-based plasma chemistries on resist removal are described.

Low loss poly-silicon for high performance capacitive silicon modulators.

PubMed

Douix, Maurin; Baudot, Charles; Marris-Morini, Delphine; Valéry, Alexia; Fowler, Daivid; Acosta-Alba, Pablo; Kerdilès, Sébastien; Euvrard, Catherine; Blanc, Romuald; Beneyton, Rémi; Souhaité, Aurélie; Crémer, Sébastien; Vulliet, Nathalie; Vivien, Laurent; Boeuf, Frédéric

2018-03-05

Optical properties of poly-silicon material are investigated to be integrated in new silicon photonics devices, such as capacitive modulators. Test structure fabrication is done on 300 mm wafer using LPCVD deposition: 300 nm thick amorphous silicon layers are deposited on thermal oxide, followed by solid phase crystallization anneal. Rib waveguides are fabricated and optical propagation losses measured at 1.31 µm. Physical analysis (TEM ASTAR, AFM and SIMS) are used to assess the origin of losses. Optimal deposition and annealing conditions have been defined, resulting in 400 nm-wide rib waveguides with only 9.2-10 dB/cm losses.

Heavy doping effects in high efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Neugroschel, A.

1985-01-01

The use of a (silicon)/(heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction (or back-surface-field, BSF) structure of silicon solar cells was examined. The results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contact are presented. A reciprocity theorem is presented that relates the short circuit current of a device, induced by a carrier generation source, to the minority carrier Fermi level in the dark. A method for accurate measurement of minority-carrier diffusion coefficients in silicon is described.

Residual strain effects on large aspect ratio micro-diaphragms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hijab, R.S.; Muller, R.S.

1988-09-30

Highly compliant, large aspect ratio diaphragms for use in low-pressure, capacitive-readout sensors, have been investigated. In such structures, unrelaxed strain in the diaphragms can radically alter mechanical behavior. Although strain can be reduced by thermal annealing, it usually reaches a remnant irreducible minimum. The purpose of this paper is to describe techniques that result in low-strain materials and that reduce the effects of residual strain in micro-diaphragms. Square polysilicon grilles and perforated diaphragms made from both single and double polysilicon layers and from single-crystal silicon, with aspect ratios (side/thickness) of up to 1000 and very low compressive strain ({approx}6 {times}more » 10{sup {minus}5}), have been fabricated. Strain reduction is achieved by combining thermal annealing with one of two mechanical design techniques. The first technique makes use of a series of cantilever beams to support the diaphragms. In a second procedure, corrugated surfaces in thinned membranes of single-crystal silicon are formed. The corrugations result from the use of boron doping and anisotropic silicon etching. In both of these techniques to produce low-strain diaphragms, an etched cavity is purposely formed in the substrate crystal below them. Only one-sided processing of wafers is employed, thus aiding reproducibility and providing ease of compatibility with an MOS process. A fast-etching sacrificial-support layer (phosphorus-doped CVD oxide) is used. 4 refs., 10 figs.« less

Experimental Design For Photoresist Characterization

NASA Astrophysics Data System (ADS)

Luckock, Larry

1987-04-01

In processing a semiconductor product (from discrete devices up to the most complex products produced) we find more photolithographic steps in wafer fabrication than any other kind of process step. Thus, the success of a semiconductor manufacturer hinges on the optimization of their photolithographic processes. Yet, we find few companies that have taken the time to properly characterize this critical operation; they are sitting in the "passenger's seat", waiting to see what will come out, hoping that the yields will improve someday. There is no "black magic" involved in setting up a process at its optimum conditions (i.e. minimum sensitivity to all variables at the same time). This paper gives an example of a real world situation for optimizing a photolithographic process by the use of a properly designed experiment, followed by adequate multidimensional analysis of the data. Basic SPC practices like plotting control charts will not, by themselves, improve yields; the control charts are, however, among the necessary tools used in the determination of the process capability and in the formulation of the problems to be addressed. The example we shall consider is the twofold objective of shifting the process average, while tightening the variance, of polysilicon line widths. This goal was identified from a Pareto analysis of yield-limiting mechanisms, plus inspection of the control charts. A key issue in a characterization of this type of process is the number of interactions between variables; this example rules out two-level full factorial and three-level fractional factorial designs (which cannot detect all of the interactions). We arrive at an experiment with five factors at five levels each. A full factorial design for five factors at three levels would require 3125 wafers. Instead, we will use a design that allows us to run this experiment with only 25 wafers, for a significant reduction in time, materials and manufacturing interruption in order to complete the experiment. An optimum solution is then determined via response surface analysis and a series of 3-D and contour plots are shown. The offset between the mask dimensions and poly CD at the optimum operating conditions is discussed with respect to yield, profits and return-on-investment. The expert system used for process optimization covers all types of process steps, producing the best custom designed experiment based on the actual equipment used. The knowledge base contains parameter lists, by machine make and model, ranked by sensitivity and controllability. One option allows 3-D spatial characterization of equipment. For the purpose of this presentation, we will assume that we want to optimize a photo-lithographic process used for polysilicon pattern definition and that we have determined minimum and maximum line widths, based on electrical yield requirements of the product. For this MOS process, the minimum critical dimension (CD) for the poly gate was determined by punchthrough voltage, threshold voltage, etc., while the maximum CD was determined from other performance factors like access time. We will start with the product engineer's analysis.

Modelling of convective processes during the Bridgman growth of poly-silicon

NASA Astrophysics Data System (ADS)

Popov, V. N.

2009-09-01

An original 3D model was used to numerically examine convective heat-and-mass transfer processes in the melt during the growth of polycrystalline silicon in vertical Bridgman configuration. The flow in the liquid was modelled using the Navier — Stokes equations in the Boussinesq approximation. The distribution of dissolved impurities was determined by solving the convective diffusion equation. The effects due to non-uniform heating of the lateral wall of the vessel and due to the shape of the crystallization front on the structure of melt flows and on the distribution of dissolved impurities in the liquid are examined.

Design, fabrication and characterization of a poly-silicon PN junction

NASA Astrophysics Data System (ADS)

Tower, Jason D.

This thesis details the design, fabrication, and characterization of a PN junction formed from p-type mono-crystalline silicon and n-type poly-crystalline silicon. The primary product of this project was a library of standard operating procedures (SOPs) for the fabrication of such devices, laying the foundations for future work and the development of a class in fabrication processes. The fabricated PN junction was characterized; in particular its current-voltage relationship was measured and fit to models. This characterization was to determine whether or not the fabrication process could produce working PN junctions with acceptable operational parameters.

Silicon on insulator self-aligned transistors

DOEpatents

McCarthy, Anthony M.

2003-11-18

A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

The Acquisition of Development of Advanced Processing Techniques for CCD Arrays.

DTIC Science & Technology

1981-01-01

E57B 96 x 2048 TDI imager production run. A minor change was incorporated on wafers #1-3; an in situ doped-polysilicon technique was used instead of the...2047, - 10 - Ab-A~ and 2048 . In some cases charge collection extends beyond these pixels. The excess signal is measured here as a percentage (Table...amount of spurious charge in pixels #2047 and 2048 is always greater than for pixels #2 and 1, respectively. This is because there is more unshielded area

Evolution of titanium residue on the walls of a plasma-etching reactor and its effect on the polysilicon etching rate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirota, Kosa, E-mail: hirota-kousa@sme.hitachi-hitec.com; Itabashi, Naoshi; Tanaka, Junichi

2014-11-01

The variation in polysilicon plasma etching rates caused by Ti residue on the reactor walls was investigated. The amount of Ti residue was measured using attenuated total reflection Fourier transform infrared spectroscopy with the HgCdTe (MCT) detector installed on the side of the reactor. As the amount of Ti residue increased, the number of fluorine radicals and the polysilicon etching rate increased. However, a maximum limit in the etching rate was observed. A mechanism of rate variation was proposed, whereby F radical consumption on the quartz reactor wall is suppressed by the Ti residue. The authors also investigated a plasma-cleaningmore » method for the removal of Ti residue without using a BCl{sub 3} gas, because the reaction products (e.g., boron oxide) on the reactor walls frequently cause contamination of the product wafers during etching. CH-assisted chlorine cleaning, which is a combination of CHF{sub 3} and Cl{sub 2} plasma treatment, was found to effectively remove Ti residue from the reactor walls. This result shows that CH radicals play an important role in deoxidizing and/or defluorinating Ti residue on the reactor walls.« less

Temperature control apparatus

DOEpatents

Northrup, M. Allen

2003-08-05

A silicon-based sleeve type chemical reaction chamber that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and non-silicon based materials to provide the thermal properties desired. For example, the chamber may combine a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis.

Microfabricated sleeve devices for chemical reactions

DOEpatents

Northrup, M. Allen

2003-01-01

A silicon-based sleeve type chemical reaction chamber that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and non-silicon based materials to provide the thermal properties desired. For example, the chamber may combine a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis.

Electronic circuitry development in a micropyrotechnic system for micropropulsion applications

NASA Astrophysics Data System (ADS)

Puig-Vidal, Manuel; Lopez, Jaime; Miribel, Pere; Montane, Enric; Lopez-Villegas, Jose M.; Samitier, Josep; Rossi, Carole; Camps, Thierry; Dumonteuil, Maxime

2003-04-01

An electronic circuitry is proposed and implemented to optimize the ignition process and the robustness of a microthruster. The principle is based on the integration of propellant material within a micromachined system. The operational concept is simply based on the combustion of an energetic propellant stored in a micromachined chamber. Each thruster contains three parts (heater, chamber, nozzle). Due to the one shot characteristic, microthrusters are fabricated in 2D array configuration. For the functioning of this kind of system, one critical point is the optimization of the ignition process as a function of the power schedule delivered by electronic devices. One particular attention has been paid on the design and implementation of an electronic chip to control and optimize the system ignition. Ignition process is triggered by electrical power delivered to a polysilicon resistance in contact with the propellant. The resistance is used to sense the temperature on the propellant which is in contact. Temperature of the microthruster node before the ignition is monitored via the electronic circuitry. A pre-heating process before ignition seems to be a good methodology to optimize the ignition process. Pre-heating temperature and pre-heating time are critical parameters to be adjusted. Simulation and experimental results will deeply contribute to improve the micropyrotechnic system. This paper will discuss all these point.

Fabrication and electrical characterization of silicon nanowires based resistors

NASA Astrophysics Data System (ADS)

Ni, L.; Demami, F.; Rogel, R.; Salaün, A. C.; Pichon, L.

2009-11-01

Silicon nanowires (SiNWs) are synthesized via the Vapor-Liquid-Solid (VLS) mechanism using gold (Au) as metal catalyst and silane (SiH4) as precursor gas. Au nanoparticles are employed as liquid droplets catalysis during the SiNWs growth performed in a hot wall LPCVD reactor at 480°C and 40 Pa. SiNWs local synthesis at micron scale is demonstrated using classical optical photolithography process. SiNWs grow with high density anchored at the dedicated catalyst islands. This resulting network is used to interconnect two heavily doped polysilicon interdigitated electrodes leading to the formation of electrical resistors in a coplanar structure. Current-voltage (I-V) characteristics highlight a symmetric shape. The temperature dependence of the electrical resistance is activated, with activation energy of 0.47 eV at temperatures greater than 300K.

Wafer-Level Membrane-Transfer Process for Fabricating MEMS

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok; Wiberg, Dean

2003-01-01

A process for transferring an entire wafer-level micromachined silicon structure for mating with and bonding to another such structure has been devised. This process is intended especially for use in wafer-level integration of microelectromechanical systems (MEMS) that have been fabricated on dissimilar substrates. Unlike in some older membrane-transfer processes, there is no use of wax or epoxy during transfer. In this process, the substrate of a wafer-level structure to be transferred serves as a carrier, and is etched away once the transfer has been completed. Another important feature of this process is that two electrodes constitutes an electrostatic actuator array. An SOI wafer and a silicon wafer (see Figure 1) are used as the carrier and electrode wafers, respectively. After oxidation, both wafers are patterned and etched to define a corrugation profile and electrode array, respectively. The polysilicon layer is deposited on the SOI wafer. The carrier wafer is bonded to the electrode wafer by using evaporated indium bumps. The piston pressure of 4 kPa is applied at 156 C in a vacuum chamber to provide hermetic sealing. The substrate of the SOI wafer is etched in a 25 weight percent TMAH bath at 80 C. The exposed buried oxide is then removed by using 49 percent HF droplets after an oxygen plasma ashing. The SOI top silicon layer is etched away by using an SF6 plasma to define the corrugation profile, followed by the HF droplet etching of the remaining oxide. The SF6 plasma with a shadow mask selectively etches the polysilicon membrane, if the transferred membrane structure needs to be patterned. Electrostatic actuators with various electrode gaps have been fabricated by this transfer technique. The gap between the transferred membrane and electrode substrate is very uniform ( 0.1 m across a wafer diameter of 100 mm, provided by optimizing the bonding control). Figure 2 depicts the finished product.

Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET's with Ultrathin Gate Oxide

NASA Technical Reports Server (NTRS)

Asenov, Asen; Saini, Subhash

2000-01-01

In this paper, we investigate various aspects of the polysilicon gate influence on the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET's with ultrathin gate oxides. The study is done by using an efficient statistical three-dimensional (3-D) "atomistic" simulation technique described else-where. MOSFET's with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveal that even in devices with a single crystal gate the gate depletion and the random dopants in it are responsible for a substantial fraction of the threshold voltage fluctuations when the gate oxide is scaled-in the range of 1-2 nm. Simulation experiments have been used in order to separate the enhancement in the threshold voltage fluctuations due to an effective increase in the oxide thickness associated with the gate depletion from the direct influence of the random dopants in the gate depletion layer. The results of the experiments show that the both factors contribute to the enhancement of the threshold voltage fluctuations, but the effective increase in the oxide-thickness has a dominant effect in the investigated range of devices. Simulations illustrating the effect or the polysilicon grain boundaries on the threshold voltage variation are also presented.

Process development of beam-lead silicon-gate COS/MOS integrated circuits

NASA Technical Reports Server (NTRS)

Baptiste, B.; Boesenberg, W.

1974-01-01

Two processes for the fabrication of beam-leaded COS/MOS integrated circuits are described. The first process utilizes a composite gate dielectric of 800 A of silicon dioxide and 450 A of pyrolytically deposited A12O3 as an impurity barrier. The second process utilizes polysilicon gate metallization over which a sealing layer of 1000 A of pyrolytic Si3N4 is deposited. Three beam-lead integrated circuits have been implemented with the first process: (1) CD4000BL - three-input NOR gate; (2) CD4007BL - triple inverter; and (3) CD4013BL - dual D flip flop. An arithmetic and logic unit (ALU) integrated circuit was designed and implemented with the second process. The ALU chip allows addition with four bit accuracy. Processing details, device design and device characterization, circuit performance and life data are presented.

Cryogenic transimpedance amplifier for micromechanical capacitive sensors.

PubMed

Antonio, D; Pastoriza, H; Julián, P; Mandolesi, P

2008-08-01

We developed a cryogenic transimpedance amplifier that works at a broad range of temperatures, from room temperature down to 4 K. The device was realized with a standard complementary metal oxide semiconductor 1.5 mum process. Measurements of current-voltage characteristics, open-loop gain, input referred noise current, and power consumption are presented as a function of temperature. The transimpedance amplifier has been successfully applied to sense the motion of a polysilicon micromechanical oscillator at low temperatures. The whole device is intended to serve as a magnetometer for microscopic superconducting samples.

Single-poly EEPROM cell with lightly doped MOS capacitors

DOEpatents

Riekels, James E [New Hope, MN; Lucking, Thomas B [Maple Grove, MN; Larsen, Bradley J [Mound, MN; Gardner, Gary R [Golden Valley, MN

2008-05-27

An Electrically Erasable Programmable Read Only Memory (EEPROM) memory cell and a method of operation are disclosed for creating an EEPROM memory cell in a standard CMOS process. A single polysilicon layer is used in combination with lightly doped MOS capacitors. The lightly doped capacitors employed in the EEPROM memory cell can be asymmetrical in design. Asymmetrical capacitors reduce area. Further capacitance variation caused by inversion can also be reduced by using multiple control capacitors. In addition, the use of multiple tunneling capacitors provides the benefit of customized tunneling paths.

Application research on the sensitivity of porous silicon

NASA Astrophysics Data System (ADS)

Xu, Gaobin; Xi, Ye; Chen, Xing; Ma, Yuanming

2017-09-01

Applications based on sensitive property of porous silicon (PSi) were researched. As a kind of porous material, the feasibility of PSi as a getter material was studied. Five groups of samples with different parameters were prepared. The gas-sensing property of PSi was studied by the test system and suitable parameters of PSi were also discussed. Meanwhile a novel structure of humidity sensor, using porous silicon as humidity-sensitive material, based on MEMS process has been successfully designed. The humidity-sensing properties were studied by a test system. Because of the polysilicon layer deposited upon the PSi layer, the humidity sensor can realize a quick dehumidification by itself. To extend service life and reduce the effect of the environment, a passivation layer (Si3N4) was also deposited on the surface of electrodes. The result indicated the novel humidity sensor presented high sensitivity (1.1 pF/RH%), low hysteresis, low temperature coefficient (0.5%RH/°C) and high stability.

Loss mechanisms in high-efficiency solar cells: Study of material properties and high-efficiency solar-cell performance on material composition: Project tasks

NASA Technical Reports Server (NTRS)

Sah, C. T.

1985-01-01

Loss mechanisms in high-efficiency solar cells were discussed. Fundamental limitations and practical solutions were stressed. Present cell efficiency is limited by many recombination sites: emitter, base, contacts, and oxide/silicon interface. Use of polysilicon passivation was suggested. After reduction of these losses, a 25% efficient cell could be built. A floating emitter cell design was shown that had the potential of low recombination losses.

Modeling and measurement of electrostatic micromirror array fabricated with single-layer polysilicon micromachining technology

NASA Astrophysics Data System (ADS)

Min, Young-Hoon; Kim, Yong-Kweon

1998-09-01

A silicon based micro mirror array is a highly efficient component for use in optical applications as adaptive optical systems and optical correlators. Many types of micro mirror or micro mirror array have been studied and proposed in order to obtain the optimal performance according to their own purposes. A micro mirror array designed, fabricated and tested in this paper consists of 5 X 5 single layer polysilicon-based, electrostatically driven actuators. The micro mirror array for the optical phase modulation is made by using only two masks and can be driven independently by 25 channel circuits. About 6 (pi) phase modulation is obtained in He-Ne laser ((lambda) equals 633 nm) with 67% fill-factor. In this paper, the deflection characteristics of the actuators in controllable range were studied. The experimental results show that the deflection characteristics is much dependent upon a residual stress in flexure, the initial curvature of mirror due to stress gradient and an electrostatic force acted on other element except for mirror itself. The modeling results agree well with the experimental results. Also, it is important to fabricate a flat mirror that is not initially curved because the curved mirror brings a bad performance in optical use. Therefore, a new method to obtain the flat mirror by using the gold metallization in spite of the residual stress unbalance is proposed in this paper.

Laser wafering for silicon solar.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurfacemore » damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.« less

Front contact solar cell with formed emitter

DOEpatents

Cousins, Peter John

2014-11-04

A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

Front contact solar cell with formed emitter

DOEpatents

Cousins, Peter John [Menlo Park, CA

2012-07-17

A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

Catalytic hydrogen sensing using microheated platinum nanoparticle-loaded graphene aerogel

DOE PAGES

Harley-Trochimczyk, Anna; Chang, Jiyoung; Zhou, Qin; ...

2014-10-02

We present that low power catalytic hydrogen sensors are fabricated by functionalizing low power polysilicon microheaters with platinum nanoparticle catalyst loaded in a high surface area graphene aerogel support. Fabrication and characterization of the polysilicon microheaters are described. The platinum nanoparticle-loaded graphene aerogel is characterized by transmission electron microscopy, scanning electron microscopy, and energy dispersive X-ray spectroscopy. Finally, the catalytic hydrogen sensors consume as little as 2.2 mW of power, have sensitivity of 1.6%/10,000 ppm hydrogen, a t90 response and recovery time of 0.97 s and 0.72 s, respectively, a lower detection limit of approximately 65 ppm, and negligible crossmore » sensitivity to methane, n-pentane, and diethylether.« less

A review of the silicon material task

NASA Technical Reports Server (NTRS)

Lutwack, R.

1984-01-01

The Silicon Material Task of the Flat-Plate Solar Array Project was assigned the objective of developing the technology for low-cost processes for producing polysilicon suitable for terrestrial solar-cell applications. The Task program comprised sections for process developments for semiconductor-grade and solar-cell-grade products. To provide information for deciding upon process designs, extensive investigations of the effects of impurities on material properties and the performance of cells were conducted. The silane process of the Union Carbide Corporation was carried through several stages of technical and engineering development; a pilot plant was the culmination of this effort. The work to establish silane fluidized-bed technology for a low-cost process is continuing. The advantages of the use of dichlorosilane is a siemens-type were shown by Hemlock Semiconductor Corporation. The development of other processes is described.

A review of the silicon material task

NASA Astrophysics Data System (ADS)

Lutwack, R.

1984-02-01

The Silicon Material Task of the Flat-Plate Solar Array Project was assigned the objective of developing the technology for low-cost processes for producing polysilicon suitable for terrestrial solar-cell applications. The Task program comprised sections for process developments for semiconductor-grade and solar-cell-grade products. To provide information for deciding upon process designs, extensive investigations of the effects of impurities on material properties and the performance of cells were conducted. The silane process of the Union Carbide Corporation was carried through several stages of technical and engineering development; a pilot plant was the culmination of this effort. The work to establish silane fluidized-bed technology for a low-cost process is continuing. The advantages of the use of dichlorosilane is a siemens-type were shown by Hemlock Semiconductor Corporation. The development of other processes is described.

Development of a polysilicon process based on chemical vapor deposition, phase 1 and phase 2

NASA Technical Reports Server (NTRS)

Plahutnik, F.; Arvidson, A.; Sawyer, D.; Sharp, K.

1982-01-01

High-purity polycrystalline silicon was produced in an experimental, intermediate and advanced CVD reactor. Data from the intermediate and advanced reactors confirmed earlier results obtained in the experimental reactor. Solar cells were fabricated by Westinghouse Electric and Applied Solar Research Corporation which met or exceeded baseline cell efficiencies. Feedstocks containing trichlorosilane or silicon tetrachloride are not viable as etch promoters to reduce silicon deposition on bell jars. Neither are they capable of meeting program goals for the 1000 MT/yr plant. Post-run CH1 etch was found to be a reasonably effective method of reducing silicon deposition on bell jars. Using dichlorosilane as feedstock met the low-cost solar array deposition goal (2.0 gh-1-cm-1), however, conversion efficiency was approximately 10% lower than the targeted value of 40 mole percent (32 to 36% achieved), and power consumption was approximately 20 kWh/kg over target at the reactor.

Study of drain-extended NMOS under electrostatic discharge stress in 28 nm and 40 nm CMOS process

NASA Astrophysics Data System (ADS)

Wang, Weihuai; Jin, Hao; Dong, Shurong; Zhong, Lei; Han, Yan

2016-02-01

Researches on the electrostatic discharge (ESD) performance of drain-extended NMOS (DeNMOS) under the state-of-the-art 28 nm and 40 nm bulk CMOS process are performed in this paper. Three distinguishing phases of avalanche breakdown stage, depletion region push-out stage and parasitic NPN turn on stage of the gate-grounded DeNMOS (GG-DeNMOS) fabricated under 28 nm CMOS process measured with transmission line pulsing (TLP) test are analyzed through TCAD simulations and tape-out silicon verification detailedly. Damage mechanisms and failure spots of GG-DeNMOS under both CMOS processes are thermal breakdown of drain junction. Improvements based on the basic structure adjustments can increase the GG-DeNMOS robustness from original 2.87 mA/μm to the highest 5.41 mA/μm. Under 40 nm process, parameter adjustments based on the basic structure have no significant benefits on the robustness improvements. By inserting P+ segments in the N+ implantation of drain or an entire P+ strip between the N+ implantation of drain and polysilicon gate to form the typical DeMOS-SCR (silicon-controlled rectifier) structure, the ESD robustness can be enhanced from 1.83 mA/μm to 8.79 mA/μm and 29.78 mA/μm, respectively.

Encapsulant Characterization and Doped Passivated Contacts for Use in a Luminescent Solar Concentrator

NASA Astrophysics Data System (ADS)

Fogel, Derek

We report progress towards encapsulant characterization and the fabrication of passivated interdigitated back contact silicon solar cells using spin-on dopants for use in a luminescent solar concentrator. For the luminescent solar concentrator to be successful, the encapsulants used to assemble the final device must not contribute to optical losses and the tandem cell must exhibit excellent passivation and low contact resistivity values. The index of refraction of polydimethylsiloxane (PDMS) is calculated to be 1.405-1.415 for 600-800 nm and 1.475-1.505 is calculated for ethylene vinyl acetate (EVA). The absorption coefficient is calculated to be less than 0.1 cm-1 for PDMS and less than 0.5 cm-1 for EVA at wavelengths less than 1000 nm. Polysilicon / SiOx passivated contact symmetric structures grown using plasma-enhanced chemical vapor deposition (PECVD) and low pressure chemical vapor deposition (LPCVD) and subsequently doped using P, B, and Ga spin-on dopants are fabricated, and their passivation and contact properties are analyzed. The n-type, P-doped passivated contact gives an implied open circuit voltage (iVOC) of 708 mV in PECVD and 727 mV in LPCVD. The p-type, B-doped passivated contact gives an iVOC of 667 mV in PECVD and 689 mV in LPCVD. The p-type, Ga-doped passivated contact, which has not been previously reported, gives an iVOC of 731 mV in PECVD and 714 mV in LPCVD. For the n-type, P-doped contact a low metal to polysilicon contact resistivity of 23.8 mO-cm2 was measured for Al on PECVD and 15.8 mO-cm2 was measured for Al on LPCVD. For the p-type, B-doped contact a low metal to polysilicon contact resistivity of 0.3 mO-cm2 was measured for Al on LPCVD. These results are encouraging for the processing of passivated interdigitated back contact solar cells, and present a route towards high-efficiency Si PV at low cost.

Multi-layer assemblies with predetermined stress profile and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor); Phillips, Stephen M. (Inventor)

2003-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

An Analysis of Hole Trapping at Grain Boundary or Poly-Si Floating-Body MOSFET.

PubMed

Jang, Taejin; Baek, Myung-Hyun; Kim, Hyungjin; Park, Byung-Gook

2018-09-01

In this paper, we demonstrate the characteristics of the floating body effect of poly-silicon with grain boundary by SENTAURUS™ TCAD simulation. As drain voltage increases, impact ionization occurs at the drain-channel junction. And these holes created by impact ionization are deposited on the bottom of the body to change the threshold voltage. This feature, the kink effect, is also observed in fully depleted silicon on insulator because grain boundary of the poly-silicon serve as a storage to trap the holes. We simulate the transfer curve depending on the density and position of the grain boundary. The trap density of the grain boundary affects the device characteristics significantly. However similar properties appear except where the grain boundary is located on the drain side.

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.

PubMed

Chen, Bo-Wei; Chang, Ting-Chang; Chang, Kuan-Chang; Hung, Yu-Ju; Huang, Shin-Ping; Chen, Hua-Mao; Liao, Po-Yung; Lin, Yu-Ho; Huang, Hui-Chun; Chiang, Hsiao-Cheng; Yang, Chung-I; Zheng, Yu-Zhe; Chu, Ann-Kuo; Li, Hung-Wei; Tsai, Chih-Hung; Lu, Hsueh-Hsing; Wang, Terry Tai-Jui; Chang, Tsu-Chiang

2017-04-05

The surface morphology in polycrystalline silicon (poly-Si) film is an issue regardless of whether conventional excimer laser annealing (ELA) or the newer metal-induced lateral crystallization (MILC) process is used. This paper investigates the stress distribution while undergoing long-term mechanical stress and the influence of stress on electrical characteristics. Our simulated results show that the nonuniform stress in the gate insulator is more pronounced near the polysilicon/gate insulator edge and at the two sides of the polysilicon protrusion. This stress results in defects in the gate insulator and leads to a nonuniform degradation phenomenon, which affects both the performance and the reliability in thin-film transistors (TFTs). The degree of degradation is similar regardless of bending axis (channel-length axis, channel-width axis) or bending type (compression, tension), which means that the degradation is dominated by the protrusion effects. Furthermore, by utilizing long-term electrical bias stresses after undergoing long-tern bending stress, it is apparent that the carrier injection is severe in the subchannel region, which confirms that the influence of protrusions is crucial. To eliminate the influence of surface morphology in poly-Si, three kinds of laser energy density were used during crystallization to control the protrusion height. The device with the lowest protrusions demonstrates the smallest degradation after undergoing long-term bending.

PULSION® HP: Tunable, High Productivity Plasma Doping

NASA Astrophysics Data System (ADS)

Felch, S. B.; Torregrosa, F.; Etienne, H.; Spiegel, Y.; Roux, L.; Turnbaugh, D.

2011-01-01

Plasma doping has been explored for many implant applications for over two decades and is now being used in semiconductor manufacturing for two applications: DRAM polysilicon counter-doping and contact doping. The PULSION HP is a new plasma doping tool developed by Ion Beam Services for high-volume production that enables customer control of the dominant mechanism—deposition, implant, or etch. The key features of this tool are a proprietary, remote RF plasma source that enables a high density plasma with low chamber pressure, resulting in a wide process space, and special chamber and wafer electrode designs that optimize doping uniformity.

LSA silicon material task closed-cycle process development

NASA Technical Reports Server (NTRS)

Roques, R. A.; Wakefield, G. F.; Blocher, J. M., Jr.; Browning, M. F.; Wilson, W.

1979-01-01

The initial effort on feasibility of the closed cycle process was begun with the design of the two major items of untested equipment, the silicon tetrachloride by product converter and the rotary drum reactor for deposition of silicon from trichlorosilane. The design criteria of the initial laboratory equipment included consideration of the reaction chemistry, thermodynamics, and other technical factors. Design and construction of the laboratory equipment was completed. Preliminary silicon tetrachloride conversion experiments confirmed the expected high yield of trichlorosilane, up to 98 percent of theoretical conversion. A preliminary solar-grade polysilicon cost estimate, including capital costs considered extremely conservative, of $6.91/kg supports the potential of this approach to achieve the cost goal. The closed cycle process appears to have a very likely potential to achieve LSA goals.

Analysis and evaluation of process and equipment in tasks 2 and 4 of the Low Cost Solar Array project

NASA Technical Reports Server (NTRS)

Goldman, H.; Wolf, M.

1978-01-01

Several experimental and projected Czochralski crystal growing process methods were studied and compared to available operations and cost-data of recent production Cz-pulling, in order to elucidate the role of the dominant cost contributing factors. From this analysis, it becomes apparent that substantial cost reductions can be realized from technical advancements which fall into four categories: an increase in furnace productivity; the reduction of crucible cost through use of the crucible for the equivalent of multiple state-of-the-art crystals; the combined effect of several smaller technical improvements; and a carry over effect of the expected availability of semiconductor grade polysilicon at greatly reduced prices. A format for techno-economic analysis of solar cell production processes was developed, called the University of Pennsylvania Process Characterization (UPPC) format. The accumulated Cz process data are presented.

Current-mode subthreshold MOS implementation of the Herault-Jutten autoadaptive network

NASA Astrophysics Data System (ADS)

Cohen, Marc H.; Andreou, Andreas G.

1992-05-01

The translinear circuits in subthreshold MOS technology and current-mode design techniques for the implementation of neuromorphic analog network processing are investigated. The architecture, also known as the Herault-Jutten network, performs an independent component analysis and is essentially a continuous-time recursive linear adaptive filter. Analog I/O interface, weight coefficients, and adaptation blocks are all integrated on the chip. A small network with six neurons and 30 synapses was fabricated in a 2-microns n-well double-polysilicon, double-metal CMOS process. Circuit designs at the transistor level yield area-efficient implementations for neurons, synapses, and the adaptation blocks. The design methodology and constraints as well as test results from the fabricated chips are discussed.

One-dimensional nanostructures for novel biosensor and transparent electronics applications

NASA Astrophysics Data System (ADS)

Chang, Hsiao-Kang

This dissertation presents one-dimensional nanostructures for novel biosensors and transparent electronics applications. In chapter 1, background information regarding nanomaterials studied in this dissertation is described. In chapter 2, I describe the first application of antibody mimic proteins (AMPs) in the field of nanobiosensors. In2O3 nanowire based biosensors have been configured with an AMP (Fibronectin, Fn) to detect nucleocapsid (N) protein, a biomarker for severe acute respiratory syndrome (SARS). Using these devices, N protein was detected at sub-nanomolar concentration in the presence of 44 microM bovine serum albumin as a background. Furthermore, the binding constant of the AMP to Fn was determined from the concentration dependence of the response of our biosensors. In chapter 3, I demonstrate an In2O3 nanowire-based biosensing system that is capable of performing rapid, label-free, electrical detection of cancer biomarkers directly from human whole blood collected by a finger prick. Detection of multiple cancer biomarkers with high reliability at clinically meaningful concentrations from whole blood collected by a finger prick using this sensing system is demonstrated. In chapter 4, I introduce a top-down nanobiosensor based on polysilicon nanoribbon with enhanced yield and device uniformity. The polysilicon nanoribbon devices can be fabricated by conventional photolithography with only easily available materials and equipments required, thus results in great time and cost efficiency as well as scalability. The devices show great response to pH changes with a wide dynamic range and high sensitivity. Biomarker detection is also demonstrated with clinically relevant sensitivity. Such results suggest that polysilicon nanoribbon devices exhibit great potential toward a highly efficient, reliable and sensitive biosensing platform. In chapter 5, I demonstrate the first printed nanobiosensor application based on separated semiconducting single-walled carbon nanotubes. The printed nanosensors exhibit reliable sensing to pH variation. We have successfully achieved the detection of Estradial, a commonly used hormone biomarker, as a proof of concept for using printed nanobiosensors on disease diagnosis. High-performance fully transparent thin-film transistors (TTFTs) on both rigid and flexible substrates with transfer printed aligned nanotubes as the active channel and indium-tin oxide as the source, drain and gate electrodes is reported in chapter 6. Such transistors are fabricated through low temperature processing, which allows device fabrication even on flexible substrates. Transparent transistors with high effective mobilities (˜1,300 cm2V -1s-1) were first demonstrated on glass substrates via engineering of the source and drain contacts, and high on/off ratio (3 x 104) was achieved using electrical breakdown. In addition, flexible TTFTs with good transparency were also fabricated and successfully operated under bending up to 120°. All of the devices showed good transparency (˜80% on average). The transparent transistors were further utilized to construct a fully transparent and flexible logic inverter on a plastic substrate, and also used to control commercial GaN light-emitting diodes (LEDs) with light intensity modulation of 103. Our results suggest that aligned nanotubes have great potential to work as building blocks for future transparent electronics. In chapter 7, a summary of all topics in this dissertation is described. Future work regarding the nanobiosensor project is also proposed.

Electrothermal actuators fabricated in four-level planarized surface-miromachined polycrystalline silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Comtois, J.H.; Michalicek, A.; Barron, C.C.

1997-11-01

This paper presents the results of tests performed on a variety of electrochemical microactuators and arrays of these actuators fabricated in the SUMMiT process at the U.S. Department of Energy`s Sandia National Laboratories. These results are intended to aid designers of thermally actuated mechanisms, and they apply to similar actuators made in other polysilicon MEMS processes such as the MUMPS process. Measurements include force and deflection versus input power, maximum operating frequency, effects of long term operation, and ideal actuator and array geometries for different applications` force requirements. Also, different methods of arraying these actuators together are compared. It ismore » found that a method using rotary joints, enabled by the advanced features of the SUMMiT fabrication process, is the most efficient array design. The design and operation of a thermally actuated stepper motor is explained to illustrate a useful application of these arrays.« less

Comparative evaluation of different forms of calcium hydroxide in apexification.

PubMed

Ghosh, Subhankar; Mazumdar, Dibyendu; Ray, Pradip Kumar; Bhattacharya, Bhaswar

2014-01-01

One out of every two children sustains a dental injury most often between 8 and 10 years of age. Majority of these teeth subsequently become non-vital and most often with immature apex. Management of these teeth is an enormous challenge for lack of apical stop. Calcium hydroxide in various formulations has maximum literature support in favor of successful apexification or induced apical closure. The aim of the following study is to determine the efficacy of calcium hydroxide in a different formulation to induce apexification. The present study was undertaken on 51 children of 8-10 years of age (both sexes) at Dr. R Ahmed Dental College and Hospital from April 2006 to March 2007. All children had one or two maxillary permanent central incisor (s), non-vital and apices open. In all the cases, apexification was attempted with either calcium hydroxide mixed with sterile distilled water, or calcium hydroxide plus iodoform in methyl cellulose base, or calcium hydroxide plus iodoform in polysilicone oil base. The success of apexification was determined on the basis of clinical and radiographic criteria. In the pre-operative asymptomatic cases (72.55%), failure occurred in only 5.45% cases and pre-operative symptomatic cases failure rate was as high as 35.71%. Success rate was 94.6% in cases with narrow open apices, whereas 64.28% in wide open apices. In cases with pre-existing apical radiolucencies, successful apexification occurred in 63.63% and success rate was 92.5% in the cases without pre-existing apical radiolucencies. Average time consumed for apexification was minimum with calcium hydroxide plus iodoform in polysilicone oil base. The overall success rate observed to be 86.27%, which is in close proximity to the findings of most of the previous studies across the globe.

High voltage MOSFET devices and methods of making the devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+more » region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.« less

High voltage MOSFET devices and methods of making the devices

DOEpatents

Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

2015-12-15

A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.

A Step Made Toward Designing Microelectromechanical System (MEMS) Structures With High Reliability

NASA Technical Reports Server (NTRS)

Nemeth, Noel N.

2003-01-01

The mechanical design of microelectromechanical systems-particularly for micropower generation applications-requires the ability to predict the strength capacity of load-carrying components over the service life of the device. These microdevices, which typically are made of brittle materials such as polysilicon, show wide scatter (stochastic behavior) in strength as well as a different average strength for different sized structures (size effect). These behaviors necessitate either costly and time-consuming trial-and-error designs or, more efficiently, the development of a probabilistic design methodology for MEMS. Over the years, the NASA Glenn Research Center s Life Prediction Branch has developed the CARES/Life probabilistic design methodology to predict the reliability of advanced ceramic components. In this study, done in collaboration with Johns Hopkins University, the ability of the CARES/Life code to predict the reliability of polysilicon microsized structures with stress concentrations is successfully demonstrated.

Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review

NASA Astrophysics Data System (ADS)

Deen, M. Jamal; Pascal, Fabien

2003-05-01

For many analog integrated circuit applications, the polysilicon emitter bipolar junction transistor (PE-BJT) is still the preferred choice because of its higher operational frequency and lower noise performance characteristics compared to MOS transistors of similar active areas and at similar biasing currents. In this paper, we begin by motivating the reader with reasons why bipolar transistors are still of great interest for analog integrated circuits. This motivation includes a comparison between BJT and the MOSFET using a simple small-signal equivalent circuit to derive important parameters that can be used to compare these two technologies. An extensive review of the popular theories used to explain low frequency noise results is presented. However, in almost all instances, these theories have not been fully tested. The effects of different processing technologies and conditions on the noise performance of PE-BJTs is reviewed and a summary of some of the key technological steps and device parameters and their effects on noise is discussed. The effects of temperature and emitter geometries scaling is reviewed. It is shown that dispersion of the low frequency noise in ultra-small geometries is a serious issue since the rate of increase of the noise dispersion is faster than the noise itself as the emitter geometry is scaled to smaller values. Finally, some ideas for future research on PE-BJTs, some of which are also applicable to SiGe heteorjunction bipolar transistors and MOSFETs, are presented after the conclusions.

Sleeve reaction chamber system

DOEpatents

Northrup, M Allen [Berkeley, CA; Beeman, Barton V [San Mateo, CA; Benett, William J [Livermore, CA; Hadley, Dean R [Manteca, CA; Landre, Phoebe [Livermore, CA; Lehew, Stacy L [Livermore, CA; Krulevitch, Peter A [Pleasanton, CA

2009-08-25

A chemical reaction chamber system that combines devices such as doped polysilicon for heating, bulk silicon for convective cooling, and thermoelectric (TE) coolers to augment the heating and cooling rates of the reaction chamber or chambers. In addition the system includes non-silicon-based reaction chambers such as any high thermal conductivity material used in combination with a thermoelectric cooling mechanism (i.e., Peltier device). The heat contained in the thermally conductive part of the system can be used/reused to heat the device, thereby conserving energy and expediting the heating/cooling rates. The system combines a micromachined silicon reaction chamber, for example, with an additional module/device for augmented heating/cooling using the Peltier effect. This additional module is particularly useful in extreme environments (very hot or extremely cold) where augmented heating/cooling would be useful to speed up the thermal cycling rates. The chemical reaction chamber system has various applications for synthesis or processing of organic, inorganic, or biochemical reactions, including the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction.

Development of a Polysilicon Process Based on Chemical Vapor Deposition of Dichlorosilane in an Advanced Siemen's Reactor

NASA Technical Reports Server (NTRS)

Arevidson, A. N.; Sawyer, D. H.; Muller, D. M.

1983-01-01

Dichlorosilane (DCS) was used as the feedstock for an advanced decomposition reactor for silicon production. The advanced reactor had a cool bell jar wall temperature, 300 C, when compared to Siemen's reactors previously used for DCS decomposition. Previous reactors had bell jar wall temperatures of approximately 750 C. The cooler wall temperature allows higher DCS flow rates and concentrations. A silicon deposition rate of 2.28 gm/hr-cm was achieved with power consumption of 59 kWh/kg. Interpretation of data suggests that a 2.8 gm/hr-cm deposition rate is possible. Screening of lower cost materials of construction was done as a separate program segment. Stainless Steel (304 and 316), Hastalloy B, Monel 400 and 1010-Carbon Steel were placed individually in an experimental scale reactor. Silicon was deposited from trichlorosilane feedstock. The resultant silicon was analyzed for electrically active and metallic impurities as well as carbon. No material contributed significant amounts of electrically active or metallic impurities, but all contributed carbon.

Nonlinear dynamic modeling of a V-shaped metal based thermally driven MEMS actuator for RF switches

NASA Astrophysics Data System (ADS)

Bakri-Kassem, Maher; Dhaouadi, Rached; Arabi, Mohamed; Estahbanati, Shahabeddin V.; Abdel-Rahman, Eihab

2018-05-01

In this paper, we propose a new dynamic model to describe the nonlinear characteristics of a V-shaped (chevron) metallic-based thermally driven MEMS actuator. We developed two models for the thermal actuator with two configurations. The first MEMS configuration has a small tip connected to the shuttle, while the second configuration has a folded spring and a wide beam attached to the shuttle. A detailed finite element model (FEM) and a lumped element model (LEM) are proposed for each configuration to completely characterize the electro-thermal and thermo-mechanical behaviors. The nonlinear resistivity of the polysilicon layer is extracted from the measured current-voltage (I-V) characteristics of the actuator and the simulated corresponding temperatures in the FEM model, knowing the resistivity of the polysilicon at room temperature from the manufacture’s handbook. Both developed models include the nonlinear temperature-dependent material properties. Numerical simulations in comparison with experimental data using a dedicated MEMS test apparatus verify the accuracy of the proposed LEM model to represent the complex dynamics of the thermal MEMS actuator. The LEM and FEM simulation results show an accuracy ranging from a maximum of 13% error down to a minimum of 1.4% error. The actuator with the lower thermal load to air that includes a folded spring (FS), also known as high surface area actuator is compared to the actuator without FS, also known as low surface area actuator, in terms of the I-V characteristics, power consumption, and experimental static and dynamic responses of the tip displacement.

An acetone microsensor with a ring oscillator circuit fabricated using the commercial 0.18 μm CMOS process.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang; Shih, Po-Jen

2014-07-17

This study investigates the fabrication and characterization of an acetone microsensor with a ring oscillator circuit using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The acetone microsensor contains a sensitive material, interdigitated electrodes and a polysilicon heater. The sensitive material is α-Fe2O3 synthesized by the hydrothermal method. The sensor requires a post-process to remove the sacrificial oxide layer between the interdigitated electrodes and to coat the α-Fe2O3 on the electrodes. When the sensitive material adsorbs acetone vapor, the sensor produces a change in capacitance. The ring oscillator circuit converts the capacitance of the sensor into the oscillation frequency output. The experimental results show that the output frequency of the acetone sensor changes from 128 to 100 MHz as the acetone concentration increases 1 to 70 ppm.

An Acetone Microsensor with a Ring Oscillator Circuit Fabricated Using the Commercial 0.18 μm CMOS Process

PubMed Central

Yang, Ming-Zhi; Dai, Ching-Liang; Shih, Po-Jen

2014-01-01

This study investigates the fabrication and characterization of an acetone microsensor with a ring oscillator circuit using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The acetone microsensor contains a sensitive material, interdigitated electrodes and a polysilicon heater. The sensitive material is α-Fe2O3 synthesized by the hydrothermal method. The sensor requires a post-process to remove the sacrificial oxide layer between the interdigitated electrodes and to coat the α-Fe2O3 on the electrodes. When the sensitive material adsorbs acetone vapor, the sensor produces a change in capacitance. The ring oscillator circuit converts the capacitance of the sensor into the oscillation frequency output. The experimental results show that the output frequency of the acetone sensor changes from 128 to 100 MHz as the acetone concentration increases 1 to 70 ppm. PMID:25036331

Operating principles of an electrothermal vibrometer for optical switching applications

NASA Astrophysics Data System (ADS)

Pai, Min-fan; Tien, Norman C.

1999-09-01

A compact polysilicon surface-micromachined microactuator designed for optical switching applications is described. This actuator is fabricated using the foundry MUMPs process provided by Cronos Integrated Microsystems Inc. Actuated electrothermally, the microactuator allows fast switching speeds and can be operated with a low voltage square-wave signal. The design, operation mechanisms for this long-range and high frequency thermal actuation are described. A vertical micromirror integrated with this actuator can be operated with a 10.5 V, 20 kHz 15% duty-cycle pulse signal, achieving a lateral moving speed higher than 15.6 mm/sec. The optical switch has been operated to frequencies as high as 30 kHz.

Micron-Scale Differential Scanning Calorimeter on a Chip

DOEpatents

Cavicchi, Richard E; Poirier, Gregory Ernest; Suehle, John S; Gaitan, Michael; Tea, Nim H

1998-06-30

A differential scanning microcalorimeter produced on a silicon chip enables microscopic scanning calorimetry measurements of small samples and thin films. The chip may be fabricated using standard CMOS processes. The microcalorimeter includes a reference zone and a sample zone. The reference and sample zones may be at opposite ends of a suspended platform or may reside on separate platforms. An integrated polysilicon heater provides heat to each zone. A thermopile consisting of a succession of thermocouple junctions generates a voltage representing the temperature difference between the reference and sample zones. Temperature differences between the zones provide information about the chemical reactions and phase transitions that occur in a sample placed in the sample zone.

Digital MOS integrated circuits

NASA Astrophysics Data System (ADS)

Elmasry, M. I.

MOS in digital circuit design is considered along with aspects of digital VLSI, taking into account a comparison of MOSFET logic circuits, 1-micrometer MOSFET VLSI technology, a generalized guide for MOSFET miniaturization, processing technologies, novel circuit structures for VLSI, and questions of circuit and system design for VLSI. MOS memory cells and circuits are discussed, giving attention to a survey of high-density dynamic RAM cell concepts, one-device cells for dynamic random-access memories, variable resistance polysilicon for high density CMOS Ram, high performance MOS EPROMs using a stacked-gate cell, and the optimization of the latching pulse for dynamic flip-flop sensors. Programmable logic arrays are considered along with digital signal processors, microprocessors, static RAMs, and dynamic RAMs.

Flat plate vs. concentrator solar photovoltaic cells - A manufacturing cost analysis

NASA Technical Reports Server (NTRS)

Granon, L. A.; Coleman, M. G.

1980-01-01

The choice of which photovoltaic system (flat plate or concentrator) to use for utilizing solar cells to generate electricity depends mainly on the cost. A detailed, comparative manufacturing cost analysis of the two types of systems is presented. Several common assumptions, i.e., cell thickness, interest rate, power rate, factory production life, polysilicon cost, and direct labor rate are utilized in this analysis. Process sequences, cost variables, and sensitivity analyses have been studied, and results of the latter show that the most important parameters which determine manufacturing costs are concentration ratio, manufacturing volume, and cell efficiency. The total cost per watt of the flat plate solar cell is $1.45, and that of the concentrator solar cell is $1.85, the higher cost being due to the increased process complexity and material costs.

Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line

NASA Astrophysics Data System (ADS)

Pohl, D.-L.; Hemperek, T.; Caicedo, I.; Gonella, L.; Hügging, F.; Janssen, J.; Krüger, H.; Macchiolo, A.; Owtscharenko, N.; Vigani, L.; Wermes, N.

2017-06-01

Pixel sensors using 8'' CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 × 1015 neq cm-2. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.

Rapid thermal annealing of WSi x. In-situ resistance measurements

NASA Astrophysics Data System (ADS)

Nobili, C.; Bosi, M.; Ottaviani, G.; Queirolo, G.; Bacci, L.

1991-11-01

In-situ sheet resistance measurements have been performed on amorphous WSi 2.5 alloy films deposited by low pressure chemical vapour deposition either on thermal oxide or on polysilicon. The heat treatments were performed in vacuum up to 1000°C at a heating rate ranging from 5 to 6000°C/min. The temperature was measured with a thermocouple placed underneath and in contact with the sample; the film sheet resistance was measured with a four-point probe in van der Pauw configuration. The in-depth elemental composition was determined by 2 MeV 4He + backscattering technique. Nuclear reaction was used to monitor the quantity of flourine present in the sample. The phases formed were identified by X-ray diffraction. The sheet resistance versus temperature curves are all similar and present, after a small initial decrease, first a sharp increase followed, after about 200°C, by a decrease. X-ray diffraction measurements indicate that the increase is due to the amorphous-hexagonal phase transformation; the decrease is due to the formation of the tetragonal WSi 2 phase. The temperature at which the two variations occur increases with the heating rate indicating thermally activated processes. The activation energies are 1.4 ±0.1 and 2.4 ±0.1 eV for the amorphous-hexagonal and hexagonal-tetragonal transformation, respectively. Silicon segregation at the inner interface occurs only on the samples where the silicide alloy was deposited on polysilicon and for heating rates lower than 200°C/min. The total flourine content is not affected by the kind of heat treatment performed.

Evaluation of Thermo-Mechanical Stability of COTS Dual-Axis MEMS Accelerometers for Space Applications

NASA Technical Reports Server (NTRS)

Sharma, Ashok K.; Teverovksy, Alexander; Day, John H. (Technical Monitor)

2000-01-01

Microelectromechanical systems in MEMS is one of the fastest growing technologies in microelectronics, and is of great interest for military and aerospace applications. Accelerometers are the earliest and most developed representatives of MEMS. First demonstrated in 1979, micromachined accelerometers were used in automobile industry for air bag crash- sensing applications since 1990. In 1999, N4EMS accelerometers were used in NASA-JPL Mars Microprobe. The most developed accelerometers for airbag crash- sensing are rated for a full range of +/- 50 G. The range of sensitivity for accelerometers required for military or aerospace applications is much larger, varying from 20,000 G (to measure acceleration during gun and ballistic munition launches), and to 10(exp -6) G, when used as guidance sensors (to measure attitude and position of a spacecraft). The presence of moving parts on the surface of chip is specific to MEMS, and particularly, to accelerometers. This characteristic brings new reliability issues to micromachined accelerometers, including cyclic fatigue cracking of polysilicon cantilevers and springs, mechanical stresses that are caused by packaging and contamination in the internal cavity of the package. Studies of fatigue cracks initiation and growth in polysilicon showed that the fatigue damage may influence MEMS device performance, and the presence of water vapor significantly enhances crack initiation and growth. Environmentally induced failures, particularly, failures due to thermal cycling and mechanical shock are considered as one of major reliability concerns in MEMS. These environmental conditions are also critical for space applications of the parts. For example, the Mars pathfinder mission had experienced 80 mechanical shock events during the pyrotechnic separation processes.

Microhotplate Temperature Sensor Calibration and BIST.

PubMed

Afridi, M; Montgomery, C; Cooper-Balis, E; Semancik, S; Kreider, K G; Geist, J

2011-01-01

In this paper we describe a novel long-term microhotplate temperature sensor calibration technique suitable for Built-In Self Test (BIST). The microhotplate thermal resistance (thermal efficiency) and the thermal voltage from an integrated platinum-rhodium thermocouple were calibrated against a freshly calibrated four-wire polysilicon microhotplate-heater temperature sensor (heater) that is not stable over long periods of time when exposed to higher temperatures. To stress the microhotplate, its temperature was raised to around 400 °C and held there for days. The heater was then recalibrated as a temperature sensor, and microhotplate temperature measurements were made based on the fresh calibration of the heater, the first calibration of the heater, the microhotplate thermal resistance, and the thermocouple voltage. This procedure was repeated 10 times over a period of 80 days. The results show that the heater calibration drifted substantially during the period of the test while the microhotplate thermal resistance and the thermocouple-voltage remained stable to within about plus or minus 1 °C over the same period. Therefore, the combination of a microhotplate heater-temperature sensor and either the microhotplate thermal resistance or an integrated thin film platinum-rhodium thermocouple can be used to provide a stable, calibrated, microhotplate-temperature sensor, and the combination of the three sensor is suitable for implementing BIST functionality. Alternatively, if a stable microhotplate-heater temperature sensor is available, such as a properly annealed platinum heater-temperature sensor, then the thermal resistance of the microhotplate and the electrical resistance of the platinum heater will be sufficient to implement BIST. It is also shown that aluminum- and polysilicon-based temperature sensors, which are not stable enough for measuring high microhotplate temperatures (>220 °C) without impractically frequent recalibration, can be used to measure the silicon substrate temperature if never exposed to temperatures above about 220 °C.

Silicon based multilayer photoelectrodes for photoelectrolysis of water to produce hydrogen from the sun

NASA Astrophysics Data System (ADS)

Faruque, Faisal

The main objective of this work is to study different materials for the direct photosynthesis of hydrogen from water. A variety of photocatalysts such as titanium dioxide, titanium oxy-nitride, silicon carbide, and gallium nitride are being investigated by others for the clean production of hydrogen for fuel cells and hydrogen economy. Our approach was to deposit suitable metallic regions on photocatalyst nanoparticles to direct the efficient synthesis of hydrogen to a particular site for convenient collection. We studied different electrode metals such as gold, platinum, titanium, palladium, and tungsten. We also studied different solar cell materials such as silicon (p- and n-types), silicon carbide and titanium dioxide semiconductors in order to efficiently generate electrons under illumination. We introduced a novel silicon-based multilayer photosynthesis device to take advantage of suitable properties of silicon and tungsten to efficiently produce hydrogen. The device consisted of a silicon (0.5mm) substrate, a deposited atomic layer of Al2O 3 (1nm), a doped polysilicon (0.1microm), and finally a tungsten nanoporous (5-10nm) layer acting as an interface electrode with water. The Al2O 3 layer was introduced to reduce leakage current and to prevent the spreading of the diffused p-n junction layer between the silicon and doped polysilicon layers. The surface of the photoelectrode was coated with nanotextured tungsten nanopores (TNP), which increased the surface area of the electrodes to the electrolyte, assisting in electron-hole mobility, and acting as a photocatalyst. The reported device exhibited a fill factor (%FF) of 27.22% and solar-to-hydrogen conversion efficiency of 0.03174%. This thesis describes the structures of the device, and offers a characterization and comparison between different photoelectrodes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vanheusden, K.; Warren, W.L.; Devine, R.A.B.

It is shown how mobile H{sup +} ions can be generated thermally inside the oxide layer of Si/SiO{sub 2}/Si structures. The technique involves only standard silicon processing steps: the nonvolatile field effect transistor (NVFET) is based on a standard MOSFET with thermally grown SiO{sub 2} capped with a poly-silicon layer. The capped thermal oxide receives an anneal at {approximately}1100 C that enables the incorporation of the mobile protons into the gate oxide. The introduction of the protons is achieved by a subsequent 500-800 C anneal in a hydrogen-containing ambient, such as forming gas (N{sub 2}:H{sub 2} 95:5). The mobile protonsmore » are stable and entrapped inside the oxide layer, and unlike alkali ions, their space-charge distribution can be controlled and rapidly rearranged at room temperature by an applied electric field. Using this principle, a standard MOS transistor can be converted into a nonvolatile memory transistor that can be switched between normally on and normally off. Switching speed, retention, endurance, and radiation tolerance data are presented showing that this non-volatile memory technology can be competitive with existing Si-based non-volatile memory technologies such as the floating gate technologies (e.g. Flash memory).« less

76 FR 63282 - Foreign-Trade Zone 140-Flint, Michigan; Application for Subzone; Hemlock Semiconductor...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-10-12

... DEPARTMENT OF COMMERCE Foreign-Trade Zones Board [Docket 61-2011] Foreign-Trade Zone 140--Flint, Michigan; Application for Subzone; Hemlock Semiconductor Corporation (Polysilicon); Hemlock, MI An... Hemlock Semiconductor Corporation (HSC), located in Hemlock, Michigan. The application was submitted...

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, K.H.

1998-06-30

A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, Kurt H.

1998-01-01

A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

Self-Heating Effects In Polysilicon Source Gated Transistors

PubMed Central

Sporea, R. A.; Burridge, T.; Silva, S. R. P.

2015-01-01

Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy-efficient, large-area, cost effective applications. The current through the reverse-biased source barrier has a potentially high positive temperature coefficient, which may lead to undesirable thermal runaway effects and even device failure through self-heating. Using numerical simulations we show that, even in highly thermally-confined scenarios and at high current levels, self-heating is insufficient to compromise device integrity. Performance is minimally affected through a modest increase in output conductance, which may limit the maximum attainable gain. Measurements on polysilicon devices confirm the simulated results, with even smaller penalties in performance, largely due to improved heat dissipation through metal contacts. We conclude that SGTs can be reliably used for high gain, power efficient analog and digital circuits without significant performance impact due to self-heating. This further demonstrates the robustness of SGTs. PMID:26351099

Overview Of Dry-Etch Techniques

NASA Astrophysics Data System (ADS)

Salzer, John M.

1986-08-01

With pattern dimensions shrinking, dry methods of etching providing controllable degrees of anisotropy become a necessity. A number of different configurations of equipment - inline, hex, planar, barrel - have been offered, and within each type, there are numerous significant variations. Further, each specific type of machine must be perfected over a complex, interactive parameter space to achieve suitable removal of various materials. Among the most critical system parameters are the choice of cathode or anode to hold the wafers, the chamber pressure, the plasma excitation frequency, and the electrode and magnetron structures. Recent trends include the use of vacuum load locks, multiple chambers, multiple electrodes, downstream etching or stripping, and multistep processes. A major percentage of etches in production handle the three materials: polysilicon, oxide and aluminum. Recent process developments have targeted refractory metals, their silicides, and with increasing emphasis, silicon trenching. Indeed, with new VLSI structures, silicon trenching has become the process of greatest interest. For stripping, dry processes provide advantages other than anisotropy. Here, too, new configurations and methods have been introduced recently. While wet processes are less than desirable from a number of viewpoints (handling, safety, disposal, venting, classes of clean room, automatability), dry methods are still being perfected as a direct, universal replacement. The paper will give an overview of these machine structures and process solutions, together with examples of interest. These findings and the trends discussed are based on semiannual survey of manufacturers and users of the various types of equipment.

Microelectromechanical mirrors and electrically-programmable diffraction gratings based on two-stage actuation

DOEpatents

Allen, James J.; Sinclair, Michael B.; Dohner, Jeffrey L.

2005-11-22

A microelectromechanical (MEM) device for redirecting incident light is disclosed. The MEM device utilizes a pair of electrostatic actuators formed one above the other from different stacked and interconnected layers of polysilicon to move or tilt an overlying light-reflective plate (i.e. a mirror) to provide a reflected component of the incident light which can be shifted in phase or propagation angle. The MEM device, which utilizes leveraged bending to provide a relatively-large vertical displacement up to several microns for the light-reflective plate, has applications for forming an electrically-programmable diffraction grating (i.e. a polychromator) or a micromirror array.

Memristive device based on a depletion-type SONOS field effect transistor

NASA Astrophysics Data System (ADS)

Himmel, N.; Ziegler, M.; Mähne, H.; Thiem, S.; Winterfeld, H.; Kohlstedt, H.

2017-06-01

State-of-the-art SONOS (silicon-oxide-nitride-oxide-polysilicon) field effect transistors were operated in a memristive switching mode. The circuit design is a variation of the MemFlash concept and the particular properties of depletion type SONOS-transistors were taken into account. The transistor was externally wired with a resistively shunted pn-diode. Experimental current-voltage curves show analog bipolar switching characteristics within a bias voltage range of ±10 V, exhibiting a pronounced asymmetric hysteresis loop. The experimental data are confirmed by SPICE simulations. The underlying memristive mechanism is purely electronic, which eliminates an initial forming step of the as-fabricated cells. This fact, together with reasonable design flexibility, in particular to adjust the maximum R ON/R OFF ratio, makes these cells attractive for neuromorphic applications. The relative large set and reset voltage around ±10 V might be decreased by using thinner gate-oxides. The all-electric operation principle, in combination with an established silicon manufacturing process of SONOS devices at the Semiconductor Foundry X-FAB, promise reliable operation, low parameter spread and high integration density.

Solid State Research.

DTIC Science & Technology

1996-02-15

photoconductor is no longer voltage biased—it is biased through a load impedance Z0 and responds nonlinearly in 1(f) when LTG GaAs ’pc Vo i G(t) = ol ... polysilicon ). This energy deposition contributes no signal charge, but it manifests itself as an intercept of ~ 0.5 MeV when extrapolating the CCD

Mechanical Rectification of Oscillatory Motion for High Torque Microactuators

NASA Astrophysics Data System (ADS)

You, Liang; Tabib-Azar, Massood

2004-03-01

High-torque and scalable rotational micromotors were designed, microfabricated using a 3 mask LPCVD polysilicon process, and characterized. Oscillatory motions generated by comb-drive actuators were rectified by a rotor with fins. The actuator periodically deforms the fins generating forces with tangential and normal components in the rotor. Tangential forces generate rotation. In comparison to the electrostatic side-drive micromotor (torque pN-m), the measured torques for these micromotors were much larger and reached 4.5 µN-m at 200Vpp applied to the comb-drive at 1 KHz. Both the comb-drive and the finned rotor are second-order resonant structures that, when coupled, result in interesting dynamic that manifests itself as different excitation (forward, reverse, stepping, and chaotic) modes of the rotor.

LSSA large area silicon sheet task continuous Czochralski process development

NASA Technical Reports Server (NTRS)

Rea, S. N.

1978-01-01

A Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a premelter to provide molten silicon flow into the primary crucible. The basic furnace is operational and several trial crystals were grown in the batch mode. Numerous premelter configurations were tested both in laboratory-scale equipment as well as in the actual furnace. The best arrangement tested to date is a vertical, cylindrical graphite heater containing small fused silicon test tube liner in which the incoming silicon is melted and flows into the primary crucible. Economic modeling of the continuous Czochralski process indicates that for 10 cm diameter crystal, 100 kg furnace runs of four or five crystals each are near-optimal. Costs tend to asymptote at the 100 kg level so little additional cost improvement occurs at larger runs. For these conditions, crystal cost in equivalent wafer area of around $20/sq m exclusive of polysilicon and slicing was obtained.

Thin-Film Transistors Fabricated Using Sputter Deposition of Zinc Oxide

NASA Astrophysics Data System (ADS)

Xiao, Nan

2013-01-01

Development of thin film transistors (TFTs) with conventional channel layer materials, such as amorphous silicon (a-Si) and polysilicon (poly-Si), has been extensively investigated. A-Si TFT currently serves the large flat panel industry; however advanced display products are demanding better TFT performance because of the associated low electron mobility of a-Si. This has motivated interest in semiconducting metal oxides, such as Zinc Oxide (ZnO), for TFT backplanes. This work involves the fabrication and characterization of TFTs using ZnO deposited by sputtering. An overview of the process details and results from recently fabricated TFTs following a full-factorial designed experiment will be presented. Material characterization and analysis of electrical results will be described. The investigated process variables were the gate dielectric and ZnO sputtering process parameters including power density and oxygen partial pressure. Electrical results showed clear differences in treatment combinations, with certain I-V characteristics demonstrating superior performance to preliminary work. A study of device stability will also be discussed.

Localized heating and bonding technique for MEMS packaging

NASA Astrophysics Data System (ADS)

Cheng, Yu-Ting

Localized heating and bonding techniques have been developed for hermetic and vacuum packaging of MEMS devices, including silicon-to-glass fusion, silicon-gold eutectic, and silicon-to-glass bonding using PSG, indium, aluminum, and aluminum/silicon alloy as the intermediate layer. Line shaped phosphorus-doped polysilicon or gold films are used as resistive microheaters to provide enough thermal energy for bonding. The bonding processes are conducted in the common environment of room temperature and atmospheric pressure and can achieve bonding strength comparable to the fracture toughness of bulk silicon in less than 10 minutes. About 5 watts of input power is needed for localized bonding which can seal a 500 x 500 mum2 area. The total input power is determined by the thermal properties of bonding materials, including the heat capacity and latent heat. Two important bonding results are obtained: (1) The surface step created by the electrical interconnect line can be planarized by reflowing the metal solder. (2) Small applied pressure, less than 1MPa, for intimate contact reduces mechanical damage to the device substrate. This new class of bonding technology has potential applications for MEMS fabrication and packaging that require low temperature processing at the wafer level, excellent bonding strength and hermetic sealing characteristics. A hermetic package based on localized aluminum/silicon-to-glass bonding has been successfully fabricated. Less than 0.2 MPa contact pressure with 46mA input current for two parallel 3.5mum wide polysilicon on-chip microheaters can create as high as 700°C bonding temperature and achieve a strong and reliable bond in 7.5 minutes. Accelerated testing in an autoclave shows some packages survive more than 450 hours under 3 atm, 100%RH and 128°C. Premature failure has been attributed to some unbonded regions on the failed samples. The bonding yield and reliability have been improved by increasing bonding time and applied pressure. Finally, vacuum encapsulation of folded-beam comb-drive mu-resonators used as pressure monitors has been demonstrated using localized aluminum/silicon-to-glass bonding. With 3.4 watt heating power, ˜0.2MPa applied contact pressure, and 90 minutes wait time before bonding, vacuum encapsulation can be achieved with the same vacuum level as the packaging environment which is about 25 mtorr. Metal coating used as diffusion barrier and a longer wait time before bonding are used to improve the vacuum level of the package. Long-term measurement of the Q of un-annealed vacuum-packaged mu-resonators, illustrates stable operation after 19 weeks.

Cobalt Oxide Nanosheet and CNT Micro Carbon Monoxide Sensor Integrated with Readout Circuit on Chip

PubMed Central

Dai, Ching-Liang; Chen, Yen-Chi; Wu, Chyan-Chyi; Kuo, Chin-Fu

2010-01-01

The study presents a micro carbon monoxide (CO) sensor integrated with a readout circuit-on-a-chip manufactured by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The sensing film of the sensor is a composite cobalt oxide nanosheet and carbon nanotube (CoOOH/CNT) film that is prepared by a precipitation-oxidation method. The structure of the CO sensor is composed of a polysilicon resistor and a sensing film. The sensor, which is of a resistive type, changes its resistance when the sensing film adsorbs or desorbs CO gas. The readout circuit is used to convert the sensor resistance into the voltage output. The post-processing of the sensor includes etching the sacrificial layers and coating the sensing film. The advantages of the sensor include room temperature operation, short response/recovery times and easy post-processing. Experimental results show that the sensitivity of the CO sensor is about 0.19 mV/ppm, and the response and recovery times are 23 s and 34 s for 200 ppm CO, respectively. PMID:22294897

Cobalt oxide nanosheet and CNT micro carbon monoxide sensor integrated with readout circuit on chip.

PubMed

Dai, Ching-Liang; Chen, Yen-Chi; Wu, Chyan-Chyi; Kuo, Chin-Fu

2010-01-01

The study presents a micro carbon monoxide (CO) sensor integrated with a readout circuit-on-a-chip manufactured by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The sensing film of the sensor is a composite cobalt oxide nanosheet and carbon nanotube (CoOOH/CNT) film that is prepared by a precipitation-oxidation method. The structure of the CO sensor is composed of a polysilicon resistor and a sensing film. The sensor, which is of a resistive type, changes its resistance when the sensing film adsorbs or desorbs CO gas. The readout circuit is used to convert the sensor resistance into the voltage output. The post-processing of the sensor includes etching the sacrificial layers and coating the sensing film. The advantages of the sensor include room temperature operation, short response/recovery times and easy post-processing. Experimental results show that the sensitivity of the CO sensor is about 0.19 mV/ppm, and the response and recovery times are 23 s and 34 s for 200 ppm CO, respectively.

Poly-silicon TFT AM-OLED on thin flexible metal substrates

NASA Astrophysics Data System (ADS)

Afentakis, Themis; Hatalis, Miltiadis K.; Voutsas, Apostolos T.; Hartzell, John W.

2003-05-01

Thin metal foils present an excellent alternative to polymers for the fabrication of large area, flexible displays. Their main advantage spurs from their ability to withstand higher temperatures during processing; microelectronic fabrication at elevated temperatures offers the ability to utilize a variety of crystallization processes for the active layer of devices and thermally grown gate dielectrics. This can lead to high performance (high mobility, low threshold voltage) low cost and highly reliable thin film transistors. In some cases, the conductive substrate can also be used to provide power to the active devices, thus reducing layout complexity. This paper discusses the first successful attempt to design and fabricate a variety of active matrix organic light emitting diode displays on thin, flexible stainless steel foils. Different pixel architectures, such as two- and four-transistor implementations, and addressing modes, such as voltage- or current-driven schemese are examined. This work clearly demonstrates the advantages associated with the fabrication of OLED displays on thin metal foils, which - through roll-to-roll processing - can potentially result in revolutionizing today's display processing, leading to a new generation of low cost, high performance versatile display systems.

Fabrication and Characterization of CMOS-MEMS Thermoelectric Micro Generators

PubMed Central

Kao, Pin-Hsu; Shih, Po-Jen; Dai, Ching-Liang; Liu, Mao-Chen

2010-01-01

This work presents a thermoelectric micro generator fabricated by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-CMOS process. The micro generator is composed of 24 thermocouples in series. Each thermocouple is constructed by p-type and n-type polysilicon strips. The output power of the generator depends on the temperature difference between the hot and cold parts in the thermocouples. In order to prevent heat-receiving in the cold part in the thermocouples, the cold part is covered with a silicon dioxide layer with low thermal conductivity to insulate the heat source. The hot part of the thermocouples is suspended and connected to an aluminum plate, to increases the heat-receiving area in the hot part. The generator requires a post-CMOS process to release the suspended structures. The post-CMOS process uses an anisotropic dry etching to remove the oxide sacrificial layer and an isotropic dry etching to etch the silicon substrate. Experimental results show that the micro generator has an output voltage of 67 μV at the temperature difference of 1 K. PMID:22205869

Focused ion beam-assisted technology in sub-picolitre micro-dispenser fabrication

NASA Astrophysics Data System (ADS)

Lopez, M. J.; Caballero, D.; Campo, E. M.; Perez-Castillejos, R.; Errachid, A.; Esteve, J.; Plaza, J. A.

2008-07-01

Novel medical and biological applications are driving increased interest in the fabrication of micropipette or micro-dispensers. Reduced volume samples and drug dosages are prime motivators in this effort. We have combined microfabrication technology with ion beam milling techniques to successfully produce cantilever-type polysilicon micro-dispensers with 3D enclosed microchannels. The microfabrication technology described here allows for the designing of nozzles with multiple shapes. The contribution of ion beam milling has had a large impact on the fabrication process and on further customizing shapes of nozzles and inlet ports. Functionalization tests were conducted to prove the viability of ion beam-fabricated micro-dispensers. Self-assembled monolayers were successfully formed when a gold surface was patterned with a thiol solution dispensed by the fabricated micro-dispensers.

78 FR 21099 - Grant of Authority for Subzone Status, Hemlock Semiconductor, L.L.C., (Polysilicon), Clarksville, TN

Federal Register 2010, 2011, 2012, 2013, 2014

2013-04-09

... DEPARTMENT OF COMMERCE Foreign-Trade Zones Board [Order No. 1895] Grant of Authority for Subzone... foreign commerce, and for other purposes,'' and authorizes the Foreign-Trade Zones Board to grant to..., and when the activity results in a significant public benefit and is in the public interest; Whereas...

Nanolaminates with Novel Properties Fabricated Using Atomic Layer Deposition Techniques

DTIC Science & Technology

2006-07-01

Enhance X-Ray Reflectivity of Polysilicon Micro-Mirrors at 1.54 A Wavelength", Proceedings of SPIE 5720, 241-251 (2005). 20. D.C. Miller, C.F...diodes ( OLEDs ). This project has demonstrated that the A120 3 ALD gas diffusion barrier helps to prevent H20 and 02 gases from diffusing through the

A Circuit Extraction System and Graphical Display for VLSI (Very Large Scale Integrated) Design.

DTIC Science & Technology

1989-12-01

understandable as a net-list. The file contains information on the different physical layers of a polysilicon chip, not how these layers combine to form...yperc; struct vwsurf vsurf =DEFAULT_VWSURF(pixwt-ndd); stt-uct vwsurf vsurf2 DEFAULT-VWSURF(pixwfLndd); ma in) another[ Ol =IV while (anothler[0O = ’y

Microhotplate Temperature Sensor Calibration and BIST

PubMed Central

Afridi, M.; Montgomery, C.; Cooper-Balis, E.; Semancik, S.; Kreider, K. G.; Geist, J.

2011-01-01

In this paper we describe a novel long-term microhotplate temperature sensor calibration technique suitable for Built-In Self Test (BIST). The microhotplate thermal resistance (thermal efficiency) and the thermal voltage from an integrated platinum-rhodium thermocouple were calibrated against a freshly calibrated four-wire polysilicon microhotplate-heater temperature sensor (heater) that is not stable over long periods of time when exposed to higher temperatures. To stress the microhotplate, its temperature was raised to around 400 °C and held there for days. The heater was then recalibrated as a temperature sensor, and microhotplate temperature measurements were made based on the fresh calibration of the heater, the first calibration of the heater, the microhotplate thermal resistance, and the thermocouple voltage. This procedure was repeated 10 times over a period of 80 days. The results show that the heater calibration drifted substantially during the period of the test while the microhotplate thermal resistance and the thermocouple-voltage remained stable to within about plus or minus 1 °C over the same period. Therefore, the combination of a microhotplate heater-temperature sensor and either the microhotplate thermal resistance or an integrated thin film platinum-rhodium thermocouple can be used to provide a stable, calibrated, microhotplate-temperature sensor, and the combination of the three sensor is suitable for implementing BIST functionality. Alternatively, if a stable microhotplate-heater temperature sensor is available, such as a properly annealed platinum heater-temperature sensor, then the thermal resistance of the microhotplate and the electrical resistance of the platinum heater will be sufficient to implement BIST. It is also shown that aluminum- and polysilicon-based temperature sensors, which are not stable enough for measuring high microhotplate temperatures (>220 °C) without impractically frequent recalibration, can be used to measure the silicon substrate temperature if never exposed to temperatures above about 220 °C. PMID:26989603

Contamination-Free Manufacturing: Tool Component Qualification, Verification and Correlation with Wafers

NASA Astrophysics Data System (ADS)

Tan, Samantha H.; Chen, Ning; Liu, Shi; Wang, Kefei

2003-09-01

As part of the semiconductor industry "contamination-free manufacturing" effort, significant emphasis has been placed on reducing potential sources of contamination from process equipment and process equipment components. Process tools contain process chambers and components that are exposed to the process environment or process chemistry and in some cases are in direct contact with production wafers. Any contamination from these sources must be controlled or eliminated in order to maintain high process yields, device performance, and device reliability. This paper discusses new nondestructive analytical methods for quantitative measurement of the cleanliness of metal, quartz, polysilicon and ceramic components that are used in process equipment tools. The goal of these new procedures is to measure the effectiveness of cleaning procedures and to verify whether a tool component part is sufficiently clean for installation and subsequent routine use in the manufacturing line. These procedures provide a reliable "qualification method" for tool component certification and also provide a routine quality control method for reliable operation of cleaning facilities. Cost advantages to wafer manufacturing include higher yields due to improved process cleanliness and elimination of yield loss and downtime resulting from the installation of "bad" components in process tools. We also discuss a representative example of wafer contamination having been linked to a specific process tool component.

Surface and allied studies in silicon solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1984-01-01

Significant improvements were made in the short-circuit current-decay method of measuring the recombination lifetime tau and the back surface recombination velocity S of the quasineutral base of silicon solar cells. The improvements include a circuit implementation that increases the speed of switching from the forward-voltage to the short-circuit conditions. They also include a supplementation of this method by some newly developed techniques employing small-signal admittance as a function of frequency omega. This supplementation is highly effective for determining tau for cases in which the diffusion length L greatly exceeds the base thickness W. Representative results on different solar cells are reported. Some advances made in the understanding of passivation provided by the polysilicon/silicon heterojunction are outlined. Recent measurements demonstrate that S 10,000 cm/s derive from this method of passivation.

Electrical characterization of single cells using polysilicon wire ion sensor in an isolation window.

PubMed

Wu, You-Lin; Hsu, Po-Yen; Hsu, Chung-Ping; Wang, Chih-Cheng; Lee, Li-Wen; Lin, Jing-Jenn

2011-10-01

A polysilicon wire (PSW) sensor can detect the H(+) ion density (pH value) of the medium coated on its surface, and different cells produce different extracellular acidification and hence different H(+) ion densities. Based on this, we used a PSW sensor in combination with a mold-cast polydimethylsiloxane (PDMS) isolation window to detect the adhesion, apoptosis and extracellular acidification of single normal cells and single cancer cells. Single living human normal cells WI38, MRC5, and BEAS-2B as well as non-small-cell lung cancer (NSCLC) cells A549, H1299, and CH27 were cultivated separately inside the isolation window. The current flowing through the PSW channel was measured. From the PSW channel current change as a function of time, we determined the cell adhesion time by observing the time required for the current change to saturate, since a stable extracellular ion density was established after the cells were completely adhered to the PSW surface. The apoptosis of cells can also be determined when the channel current change drops to zero. We found that all the NSCLC cells had a higher channel current change and hence a lower pH value than the normal cells anytime after they were seeded. The corresponding average pH values were 5.86 for A549, 6.00 for H1299, 6.20 for CH27, 6.90 for BEAS-2B, 6.96for MRC5, and 7.02 for WI38, respectively, after the cells were completely adhered to the PSW surface. Our results show that NSCLC cells have a stronger cell-substrate adhesion and a higher extracellular acidification rate than normal cells.

Biomimetic micromechanical adaptive flow-sensor arrays

NASA Astrophysics Data System (ADS)

Krijnen, Gijs; Floris, Arjan; Dijkstra, Marcel; Lammerink, Theo; Wiegerink, Remco

2007-05-01

We report current developments in biomimetic flow-sensors based on flow sensitive mechano-sensors of crickets. Crickets have one form of acoustic sensing evolved in the form of mechanoreceptive sensory hairs. These filiform hairs are highly perceptive to low-frequency sound with energy sensitivities close to thermal threshold. In this work we describe hair-sensors fabricated by a combination of sacrificial poly-silicon technology, to form silicon-nitride suspended membranes, and SU8 polymer processing for fabrication of hairs with diameters of about 50 μm and up to 1 mm length. The membranes have thin chromium electrodes on top forming variable capacitors with the substrate that allow for capacitive read-out. Previously these sensors have been shown to exhibit acoustic sensitivity. Like for the crickets, the MEMS hair-sensors are positioned on elongated structures, resembling the cercus of crickets. In this work we present optical measurements on acoustically and electrostatically excited hair-sensors. We present adaptive control of flow-sensitivity and resonance frequency by electrostatic spring stiffness softening. Experimental data and simple analytical models derived from transduction theory are shown to exhibit good correspondence, both confirming theory and the applicability of the presented approach towards adaptation.

Charge-Coupled Scanned IR Imaging Sensors

DTIC Science & Technology

1974-07-15

DATE 15 July 1974 O NUMBER OF PAGES 37 IS SECURITY CLASS, ( ol Ihi3 teporl) Unclassified 15a DECLASSIFICATION DOWNGRATING...SCHEDULE N/A 16 DISTRIBUTION STATEMENT’oMhi» Htpu.- A - Approved for public release; distribution unlimited. 17 DISTRIBUTION STATEMENT ( ol ...overlapping layers of polysilicon and metal for improved shift-register performance and stability. This linear array should provide the information

Synthesis of Mismatched Heterojunction/Substrate Interfaces

DTIC Science & Technology

1991-10-11

and advantages of strained layers. DD IZ JAN7 1473 EDITION OF INOV 65 IS OBSOLETE *’~~s.*. ~ ~.-A ~’ SECURITY CLASSIFICATIO14 Ol THIS PAGE (When Dsea...cross-section is shown ini 1-ig. 1.14(a), is analogous to the polysilicon -gate FET in Si-MOS devices. From the band diagam in Fig 1.14(b), it can be seen

The challenge of screen printed Ag metallization on nano-scale poly-silicon passivated contacts for silicon solar cells

NASA Astrophysics Data System (ADS)

Jiang, Lin; Song, Lixin; Yan, Li; Becht, Gregory; Zhang, Yi; Hoerteis, Matthias

2017-08-01

Passivated contacts can be used to reduce metal-induced recombination for higher energy conversion efficiency for silicon solar cells, and are obtained increasing attentions by PV industries in recent years. The reported thicknesses of passivated contact layers are mostly within tens of nanometer range, and the corresponding metallization methods are realized mainly by plating/evaporation technology. This high cost metallization cannot compete with the screen printing technology, and may affect its market potential comparing with the presently dominant solar cell technology. Very few works have been reported on screen printing metallization on passivated contact solar cells. Hence, there is a rising demand to realize screen printing metallization technology on this topic. In this work, we investigate applying screen printing metallization pastes on poly-silicon passivated contacts. The critical challenge for us is to build low contact resistance that can be competitive to standard technology while restricting the paste penetrations within the thin nano-scale passivated contact layers. The contact resistivity of 1.1mohm-cm2 and the open circuit voltages > 660mV are achieved, and the most appropriate thickness range is estimated to be around 80 150nm.

Development and fabrication of low ON resistance high current vertical VMOS power FETs

NASA Technical Reports Server (NTRS)

Kay, S.

1979-01-01

The design of a VMOS Power FET exhibiting low ON resistance, high current as well as high breakdown voltage and fast switching speeds is described. The design which is based on a 1st-order device model, features a novel polysilicon-gate structure and fieldplated groove termination to achieve high packing density and high breakdown voltage, respectively. One test chip, named VNTKI, can block 180 V at an ON resistence of 2.5 ohm. A 150 mil x 200 mil (.19 sq cm) experimental chip has demonstrated a breakdown voltage of 200v, an ON resistance of 0.12 ohm, a switching time of less than 100 ns, and a pulse drain - current of 50 A with 10 V gate drive.

Electromagnetic ray tracing model for line structures.

PubMed

Tan, C B; Khoh, A; Yeo, S H

2008-03-17

In this paper, a model for electromagnetic scattering of line structures is established based on high frequency approximation approach - ray tracing. This electromagnetic ray tracing (ERT) model gives the advantage of identifying each physical field that contributes to the total solution of the scattering phenomenon. Besides the geometrical optics field, different diffracted fields associated with the line structures are also discussed and formulated. A step by step addition of each electromagnetic field is given to elucidate the causes of a disturbance in the amplitude profile. The accuracy of the ERT model is also discussed by comparing with the reference finite difference time domain (FDTD) solution, which shows a promising result for a single polysilicon line structure with width of as narrow as 0.4 wavelength.

Leakage current conduction in metal gate junctionless nanowire transistors

NASA Astrophysics Data System (ADS)

Oproglidis, T. A.; Karatsori, T. A.; Barraud, S.; Ghibaudo, G.; Dimitriadis, C. A.

2017-05-01

In this paper, the experimental off-state drain leakage current behavior is systematically explored in n- and p-channel junctionless nanowire transistors with HfSiON/TiN/p+-polysilicon gate stack. The analysis of the drain leakage current is based on experimental data of the gate leakage current. It has been shown that the off-state drain leakage current in n-channel devices is negligible, whereas in p-channel devices it is significant and dramatically increases with drain voltage. The overall results indicate that the off-state drain leakage current in p-channel devices is mainly due to trap-assisted Fowler-Nordheim tunneling of electrons through the gate oxide of electrons from the metal gate to the silicon layer near the drain region.

Electrical Properties of Reactive Liquid Crystal Semiconductors

NASA Astrophysics Data System (ADS)

McCulloch, Iain; Coelle, Michael; Genevicius, Kristijonas; Hamilton, Rick; Heckmeier, Michael; Heeney, Martin; Kreouzis, Theo; Shkunov, Maxim; Zhang, Weimin

2008-01-01

Fabrication of display products by low cost printing technologies such as ink jet, gravure offset lithography and flexography requires solution processable semiconductors for the backplane electronics. The products will typically be of lower performance than polysilicon transistors, but comparable to amorphous silicon. A range of prototypes are under development, including rollable electrophoretic displays, active matrix liquid crystal displays (AMLCD's), and flexible organic light-emitting diode (OLED) displays. Organic semiconductors that offer both electrical performance and stability with respect to storage and operation under ambient conditions are required. This work describes the initial evaluation of reactive mesogen semiconductors, which can polymerise within mesophase temperatures, “freezing in” the order in crosslinked domains. These crosslinked domains offer mechanical stability and are inert to solvent exposure in further processing steps. Reactive mesogens containing conjugated aromatic cores, designed to facilitate charge transport and provide good oxidative stability, were prepared and their liquid crystalline properties evaluated. Both time-of-flight and field effect transistor devices were prepared and their electrical characterisation reported.

Thermal ink-jet device using single-chip silicon microchannels

NASA Astrophysics Data System (ADS)

Wuu, DongSing; Cheng, Chen-Yue; Horng, RayHua; Chan, G. C.; Chiu, Sao-Ling; Wu, Yi-Yung

1998-06-01

We present a new method to fabricate silicon microfluidic channels by through-hole etching with subsequent planarization. The method is based on etching out the deep grooves through a perforated silicon carbide membrane, followed by sealing the membrane with plasma-enhanced chemical vapor deposition (PECVD). Low-pressure-chemical-vapor- deposited (LPCVD) polysilicon was used as a sacrificial layer to define the channel structure and only one etching step is required. This permits the realization of planarization after a very deep etching step in silicon and offers the possibility for film deposition, resist spinning and film patterning across deep grooves. The process technology was demonstrated on the fabrication of a monolithic silicon microchannel structure for thermal inkjet printing. The Ta-Al heater arrays are integrated on the top of each microchannel, which connect to a common on-chip front-end ink reservoir. The fabrication of this device requires six masks and no active nozzle-to-chip alignment. Moreover, the present micromachining process is compatible with the addition of on-chip circuitry for multiplexing the heater control signals. Heat transfer efficiency to the ink is enhanced by the high thermal conductivity of the silicon carbide in the channel ceiling, while the bulk silicon maintains high interchannel isolation. The fabricated inkjet devices show the droplet sizes of 20 - 50 micrometer in diameter with various channel dimensions and stable ejection of ink droplets more than 1 million.

SiGe BiCMOS manufacturing platform for mmWave applications

NASA Astrophysics Data System (ADS)

Kar-Roy, Arjun; Howard, David; Preisler, Edward; Racanelli, Marco; Chaudhry, Samir; Blaschke, Volker

2010-10-01

TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz fT/fMAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm2 stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.

Piezoresistive sensing of bistable micro mechanism state

NASA Astrophysics Data System (ADS)

Anderson, Jeffrey K.; Howell, Larry L.; Wittwer, Jonathan W.; McLain, Timothy W.

2006-05-01

The objective of this work is to demonstrate the feasibility of on-chip sensing of bistable mechanism state using the piezoresistive properties of polysilicon, thus eliminating the need for electrical contacts. Changes in position are detected by observing changes in resistance across the mechanism. Sensing the state of bistable mechanisms is critical for various applications, including high-acceleration sensing arrays and alternative forms of nonvolatile memory. A fully compliant bistable micro mechanism was designed, fabricated and tested to demonstrate the feasibility of this sensing technique. Testing results from two fabrication processes, SUMMiT IV and MUMPs, are presented. The SUMMiT mechanism was then integrated into various Wheatstone bridge configurations to investigate their potential advantages and to demonstrate various design layouts. Repeatable and detectable results were found with independent mechanisms and with those integrated into Wheatstone bridges.

An abuttable CCD imager for visible and X-ray focal plane arrays

NASA Technical Reports Server (NTRS)

Burke, Barry E.; Mountain, Robert W.; Harrison, David C.; Bautz, Marshall W.; Doty, John P.

1991-01-01

A frame-transfer silicon charge-coupled-device (CCD) imager has been developed that can be closely abutted to other imagers on three sides of the imaging array. It is intended for use in multichip arrays. The device has 420 x 420 pixels in the imaging and frame-store regions and is constructed using a three-phase triple-polysilicon process. Particular emphasis has been placed on achieving low-noise charge detection for low-light-level imaging in the visible and maximum energy resolution for X-ray spectroscopic applications. Noise levels of 6 electrons at 1-MHz and less than 3 electrons at 100-kHz data rates have been achieved. Imagers have been fabricated on 1000-Ohm-cm material to maximize quantum efficiency and minimize split events in the soft X-ray regime.

Comparison of fabrication methods for microstructured deep UV multimode waveguides based on fused silica

NASA Astrophysics Data System (ADS)

Elmlinger, Philipp; Schreivogel, Martin; Schmid, Marc; Kaiser, Myriam; Priester, Roman; Sonström, Patrick; Kneissl, Michael

2016-04-01

The suitability of materials for deep ultraviolet (DUV) waveguides concerning transmittance, fabrication, and coupling properties is investigated and a fused silica core/ambient air cladding waveguide system is presented. This high refractive index contrast system has far better coupling efficiency especially for divergent light sources like LEDs and also a significantly smaller critical bending radius compared to conventional waveguide systems, as simulated by ray-tracing simulations. For the fabrication of 300-ffm-thick multimode waveguides a hydrouoric (HF) acid based wet etch process is compared to selective laser etching (SLE). In order to fabricate thick waveguides out of 300-ffm-thick silica wafers by HF etching, two masking materials, LPCVD silicon nitride and LPCVD poly silicon, are investigated. Due to thermal stress, the silicon nitride deposited wafers show cracks and even break. Using poly silicon as a masking material, no cracks are observed and deep etching in 50 wt% HF acid up to 180 min is performed. While the masked and unmasked silica surface is almost unchanged in terms of roughness, notching defects occur at the remaining polysilicon edge leading to jagged sidewalls. Using SLE, waveguides with high contour accuracy are fabricated and the DUV guiding properties are successfully demonstrated with propagation losses between 0.6 and 0:8 dB=mm. These values are currently limited by sidewall scattering losses.

An electromechanical material testing system for in situ electron microscopy and applications.

PubMed

Zhu, Yong; Espinosa, Horacio D

2005-10-11

We report the development of a material testing system for in situ electron microscopy (EM) mechanical testing of nanostructures. The testing system consists of an actuator and a load sensor fabricated by means of surface micromachining. This previously undescribed nanoscale material testing system makes possible continuous observation of the specimen deformation and failure with subnanometer resolution, while simultaneously measuring the applied load electronically with nanonewton resolution. This achievement was made possible by the integration of electromechanical and thermomechanical components based on microelectromechanical system technology. The system capabilities are demonstrated by the in situ EM testing of free-standing polysilicon films, metallic nanowires, and carbon nanotubes. In particular, a previously undescribed real-time instrumented in situ transmission EM observation of carbon nanotubes failure under tensile load is presented here.

Dictionary Indexing of Electron Channeling Patterns.

PubMed

Singh, Saransh; De Graef, Marc

2017-02-01

The dictionary-based approach to the indexing of diffraction patterns is applied to electron channeling patterns (ECPs). The main ingredients of the dictionary method are introduced, including the generalized forward projector (GFP), the relevant detector model, and a scheme to uniformly sample orientation space using the "cubochoric" representation. The GFP is used to compute an ECP "master" pattern. Derivative free optimization algorithms, including the Nelder-Mead simplex and the bound optimization by quadratic approximation are used to determine the correct detector parameters and to refine the orientation obtained from the dictionary approach. The indexing method is applied to poly-silicon and shows excellent agreement with the calibrated values. Finally, it is shown that the method results in a mean disorientation error of 1.0° with 0.5° SD for a range of detector parameters.

Quantum Mechanical Modeling of Ballistic MOSFETs

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan (Technical Monitor)

2001-01-01

The objective of this project was to develop theory, approximations, and computer code to model quasi 1D structures such as nanotubes, DNA, and MOSFETs: (1) Nanotubes: Influence of defects on ballistic transport, electro-mechanical properties, and metal-nanotube coupling; (2) DNA: Model electron transfer (biochemistry) and transport experiments, and sequence dependence of conductance; and (3) MOSFETs: 2D doping profiles, polysilicon depletion, source to drain and gate tunneling, understand ballistic limit.

Millimeter-Wave Voltage-Controlled Oscillators in 0.13-micrometer CMOS Technology

DTIC Science & Technology

2006-06-01

controlled oscillators. Varactor , transistor, and in- ductor designs are optimized to reduce the parasitic capacitances. An investigation of tradeoff between...quality factor and tuning range for MOS varactors at 24 GHz has shown that the polysilicon gate lengths between 0.18 and 0.24 m result both good...millimeter wave, MOS varactor , quality factor, transmission line, voltage-controlled oscillator (VCO). I. INTRODUCTION WITH THE RAPID advance of high

Two-phase charge-coupled device

NASA Technical Reports Server (NTRS)

Kosonocky, W. F.; Carnes, J. E.

1973-01-01

A charge-transfer efficiency of 99.99% per stage was achieved in the fat-zero mode of operation of 64- and 128-stage two-phase charge-coupled shift registers at 1.0-MHz clock frequency. The experimental two-phase charge-coupled shift registers were constructed in the form of polysilicon gates overlapped by aluminum gates. The unidirectional signal flow was accomplished by using n-type substrates with 0.5 to 1.0 ohm-cm resistivity in conjunction with a channel oxide thickness of 1000 A for the polysilicon gates and 3000 A for the aluminum gates. The operation of the tested shift registers with fat zero is in good agreement with the free-charge transfer characteristics expected for the tested structures. The charge-transfer losses observed when operating the experimental shift registers without the fat zero are attributed to fast interface state trapping. The analytical part of the report contains a review backed up by an extensive appendix of the free-charge transfer characteristics of CCD's in terms of thermal diffusion, self-induced drift, and fringing field drift. Also, a model was developed for the charge-transfer losses resulting from charge trapping by fast interface states. The proposed model was verified by the operation of the experimental two-phase charge-coupled shift registers.

Use of silicon oxynitride as a sacrificial material for microelectromechanical devices

DOEpatents

Habermehl, Scott D.; Sniegowski, Jeffry J.

2001-01-01

The use of silicon oxynitride (SiO.sub.x N.sub.y) as a sacrificial material for forming a microelectromechanical (MEM) device is disclosed. Whereas conventional sacrificial materials such as silicon dioxide and silicate glasses are compressively strained, the composition of silicon oxynitride can be selected to be either tensile-strained or substantially-stress-free. Thus, silicon oxynitride can be used in combination with conventional sacrificial materials to limit an accumulation of compressive stress in a MEM device; or alternately the MEM device can be formed entirely with silicon oxynitride. Advantages to be gained from the use of silicon oxynitride as a sacrificial material for a MEM device include the formation of polysilicon members that are substantially free from residual stress, thereby improving the reliability of the MEM device; an ability to form the MEM device with a higher degree of complexity and more layers of structural polysilicon than would be possible using conventional compressively-strained sacrificial materials; and improved manufacturability resulting from the elimination of wafer distortion that can arise from an excess of accumulated stress in conventional sacrificial materials. The present invention is useful for forming many different types of MEM devices including accelerometers, sensors, motors, switches, coded locks, and flow-control devices, with or without integrated electronic circuitry.

Design of Low-Noise Output Amplifiers for P-channel Charge-Coupled Devices Fabricated on High-Resistivity Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haque, S; Frost, F Dion R.; Groulx, R

2011-12-22

We describe the design and optimization of low-noise, single-stage output amplifiers for p-channel charge-coupled devices (CCDs) used for scientific applications in astronomy and other fields. The CCDs are fabricated on high-resistivity, 4000–5000 -cm, n-type silicon substrates. Single-stage amplifiers with different output structure designs and technologies have been characterized. The standard output amplifier is designed with an n{sup +} polysilicon gate that has a metal connection to the sense node. In an effort to lower the output amplifier readout noise by minimizing the capacitance seen at the sense node, buried-contact technology has been investigated. In this case, the output transistor hasmore » a p{sup +} polysilicon gate that connects directly to the p{sup +} sense node. Output structures with buried-contact areas as small as 2 μm × 2 μm are characterized. In addition, the geometry of the source-follower transistor was varied, and we report test results on the conversion gain and noise of the various amplifier structures. By use of buried-contact technology, better amplifier geometry, optimization of the amplifier biases and improvements in the test electronics design, we obtain a 45% reduction in noise, corresponding to 1.7 e{sup -} rms at 70 kpixels/sec.« less

Phase-sensitive techniques applied to a micromachined vacuum sensor

NASA Astrophysics Data System (ADS)

Chapman, Glenn H.; Sawadsky, N.; Juneja, P. P.

1996-09-01

Phase sensitive AC measurement techniques are particularly applicable to micromachined sensors detecting temperature changes at a sensor caused by a microheater. The small mass produces rapid thermal response to AC signals which are easily detectable with lock-in amplifiers. Phase sensitive measurements were applied to a CMOS compatible micromachined pressure sensor consisting a polysilicon sense line, 760 microns long, on an oxide microbridge separated by 6 microns on each horizontal side from similar polysilicon heaters, all over a micromachined cavity. Sinusoidal heater signals at 32 Hz induced temperature caused sense line resistance changes at 64 Hz. The lock-in detected this as a first harmonic sense resistor voltage from a DC constant sense current. By observing the first harmonic the lock-in rejects all AC coupling of noise by capacitance or inductance, by measuring only those signals at the 64 Hz frequency and with a fixed phase relationship to the heater driver signals. This sensor produces large signals near atmospheric pressure, declining to 7 (mu) V below 0.1 mTorr. Phase measurements between 760 and 100 Torr where the air's thermal conductivity changes little, combined with amplitude changes at low pressure generate a pressure measurement accurate at 5 percent from 760 Torr to 10 mTorr, sensing of induced temperature changes of 0.001 degree C.

A Distance Detector with a Strip Magnetic MOSFET and Readout Circuit.

PubMed

Sung, Guo-Ming; Lin, Wen-Sheng; Wang, Hsing-Kuang

2017-01-10

This paper presents a distance detector composed of two separated metal-oxide semiconductor field-effect transistors (MOSFETs), a differential polysilicon cross-shaped Hall plate (CSHP), and a readout circuit. The distance detector was fabricated using 0.18 μm 1P6M Complementary Metal-Oxide Semiconductor (CMOS) technology to sense the magnetic induction perpendicular to the chip surface. The differential polysilicon CSHP enabled the magnetic device to not only increase the magnetosensitivity but also eliminate the offset voltage generated because of device mismatch and Lorentz force. Two MOSFETs generated two drain currents with a quadratic function of the differential Hall voltages at CSHP. A readout circuit-composed of a current-to-voltage converter, a low-pass filter, and a difference amplifier-was designed to amplify the current difference between two drains of MOSFETs. Measurements revealed that the electrostatic discharge (ESD) could be eliminated from the distance sensor by grounding it to earth; however, the sensor could be desensitized by ESD in the absence of grounding. The magnetic influence can be ignored if the magnetic body (human) stays far from the magnetic sensor, and the measuring system is grounded to earth by using the ESD wrist strap (Strap E-GND). Both 'no grounding' and 'grounding to power supply' conditions were unsuitable for measuring the induced Hall voltage.

Silicon materials task of the low-cost solar array project. Phase 4: Effects of impurities and processing on silicon solar cells

NASA Technical Reports Server (NTRS)

Hopkins, R. H.; Hanes, M. H.; Davis, J. R.; Rohatgi, A.; Raichoudhury, P.; Mollenkopf, H. C.

1981-01-01

The results of the study form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost-benefit relationships for the use of less pure, less costly solar grade silicon. Cr is highly mobile in silicon even at temperatures as low as 600 C. Contrasting with earlier data for Mo, Ti, and V, Cr concentrations vary from place to place in polycrystalline silicon wafers and the electrically-active Cr concentration in the polysilicon is more than an order of magnitude smaller than would be projected from single crystal impurity data. We hypothesize that Cr diffuses during ingot cooldown after growth, preferentially segregates to grain and becomes electrically deactivated. Accelerated aging data from Ni-contaminated silicon imply that no significant impurity-induced cell performance reduction should be expected over a twenty year device lifetime.

Microfabricated microengine for use as a mechanical drive and power source in the microdomain and fabrication process

DOEpatents

Garcia, Ernest J.; Sniegowski, Jeffry J.

1997-01-01

A microengine uses two synchronized linear actuators as a power source and converts oscillatory motion from the actuators into rotational motion via direct linkage connection to an output gear or wheel. The microengine provides output in the form of a continuously rotating output gear that is capable of delivering drive torque to a micromechanism. The microengine can be operated at varying speeds and its motion can be reversed. Linear actuators are synchronized in order to provide linear oscillatory motion to the linkage means in the X and Y directions according to a desired position, rotational direction and speed of said mechanical output means. The output gear has gear teeth on its outer perimeter for directly contacting a micromechanism requiring mechanical power. The gear is retained by a retaining means which allows said gear to rotate freely. The microengine is microfabricated of polysilicon on one wafer using surface micromachining batch fabrication.

Monolithic integration of a MOSFET with a MEMS device

DOEpatents

Bennett, Reid; Draper, Bruce

2003-01-01

An integrated microelectromechanical system comprises at least one MOSFET interconnected to at least one MEMS device on a common substrate. A method for integrating the MOSFET with the MEMS device comprises fabricating the MOSFET and MEMS device monolithically on the common substrate. Conveniently, the gate insulator, gate electrode, and electrical contacts for the gate, source, and drain can be formed simultaneously with the MEMS device structure, thereby eliminating many process steps and materials. In particular, the gate electrode and electrical contacts of the MOSFET and the structural layers of the MEMS device can be doped polysilicon. Dopant diffusion from the electrical contacts is used to form the source and drain regions of the MOSFET. The thermal diffusion step for forming the source and drain of the MOSFET can comprise one or more of the thermal anneal steps to relieve stress in the structural layers of the MEMS device.

Double-blind, half-face study comparing topical vitamin C and vehicle for rejuvenation of photodamage.

PubMed

Fitzpatrick, Richard E; Rostan, Elizabeth F

2002-03-01

Aging of the population, in particular the "baby boomers," has resulted in increased interest in methods of reversal of photodamage. Non-invasive treatments are in high demand, and our knowledge of mechanisms of photodamage to skin, protection of the skin, and repair of photodamage are becoming more sophisticated and complex. The objective of this study is to determine if the topical use of a vitamin C preparation can stimulate the skin to repair photodamage and result in clinically visible differences, as well as microscopically visible improvement. Ten patients applied in a double-blind manner a newly formulated vitamin C complex having 10% ascorbic acid (water soluble) and 7% tetrahexyldecyl ascorbate (lipid soluble) in an anhydrous polysilicone gel base to one-half of the face and the inactive polysilicone gel base to the opposite side. Clincial evaluation of wrinkling, pigmentation, inflammation, and hydration was performed prior to the study and at weeks 4, 8, and 12. Two mm punch biopsies of the lateral cheeks were performed at 12 weeks in four patients and stained with hematoxylin and eosin, as well as in situ hybridization studies using an anti-sense probe for mRNA for type I collagen. A questionnaire was also completed by each patient. A statistically significant improvement of the vitamin C-treated side was seen in the decreased photoaging scores of the cheeks (P = 0.006) and the peri-oral area (P = 0.01). The peri-orbital area improved bilaterally, probably indicating improved hydration. The overall facial improvement of the vitamin C side was statistically significant (P = 0.01). Biopsies showed increased Grenz zone collagen, as well as increased staining for mRNA for type I collagen. No patients were found to have any evidence of inflammation. Hydration was improved bilaterally. Four patients felt that the vitamin C-treated side improved unilaterally. No patient felt the placebo side showed unilateral improvement. This formulation of vitamin C results in clinically visible and statistically significant improvement in wrinkling when used topically for 12 weeks. This clinical improvement correlates with biopsy evidence of new collagen formation.

Scaling and application of commercial, feature-rich, modular mixed-signal technology platforms for large format ROICs

NASA Astrophysics Data System (ADS)

Kar-Roy, Arjun; Racanelli, Marco; Howard, David; Miyagi, Glenn; Bowler, Mark; Jordan, Scott; Zhang, Tao; Krieger, William

2010-04-01

Today's modular, mixed-signal CMOS process platforms are excellent choices for manufacturing of highly integrated, large-format read out integrated circuits (ROICs). Platform features, that can be used for both cooled and un-cooled ROIC applications, can include (1) quality passives such as 4fFμm2 stacked MIM capacitors for linearity and higher density capacitance per pixel, 1kOhm high-value poly-silicon resistors, 2.8μm thick metals for efficient power distribution and reduced I-R drop; (2) analog active devices such as low noise single gate 3.3V, and 1.8V/3.3V or 1.8V/5V dual gate configurations, 40V LDMOS FETs, and NPN and PNP devices, deep n-well for substrate isolation for analog blocks and digital logic; (3) tools to assist the circuit designer such as models for cryogenic temperatures, CAD assistance for metal density uniformity determination, statistical, X-sigma and PCM-based models for corner validation and to simulate design sensitivity, and (4) sub-field stitching for large die. The TowerJazz platform of technology for 0.50μm, 0.25μm and 0.18μm CMOS nodes, with features as described above, is described in detail in this paper.

Optimal scan strategy for mega-pixel and kilo-gray-level OLED-on-silicon microdisplay.

PubMed

Ji, Yuan; Ran, Feng; Ji, Weigui; Xu, Meihua; Chen, Zhangjing; Jiang, Yuxi; Shen, Weixin

2012-06-10

The digital pixel driving scheme makes the organic light-emitting diode (OLED) microdisplays more immune to the pixel luminance variations and simplifies the circuit architecture and design flow compared to the analog pixel driving scheme. Additionally, it is easily applied in full digital systems. However, the data bottleneck becomes a notable problem as the number of pixels and gray levels grow dramatically. This paper will discuss the digital driving ability to achieve kilogray-levels for megapixel displays. The optimal scan strategy is proposed for creating ultra high gray levels and increasing light efficiency and contrast ratio. Two correction schemes are discussed to improve the gray level linearity. A 1280×1024×3 OLED-on-silicon microdisplay, with 4096 gray levels, is designed based on the optimal scan strategy. The circuit driver is integrated in the silicon backplane chip in the 0.35 μm 3.3 V-6 V dual voltage one polysilicon layer, four metal layers (1P4M) complementary metal-oxide semiconductor (CMOS) process with custom top metal. The design aspects of the optimal scan controller are also discussed. The test results show the gray level linearity of the correction schemes for the optimal scan strategy is acceptable by the human eye.

Three-dimensional integrated circuits for lab-on-chip dielectrophoresis of nanometer scale particles

NASA Astrophysics Data System (ADS)

Dickerson, Samuel J.; Noyola, Arnaldo J.; Levitan, Steven P.; Chiarulli, Donald M.

2007-01-01

In this paper, we present a mixed-technology micro-system for electronically manipulating and optically detecting virusscale particles in fluids that is designed using 3D integrated circuit technology. During the 3D fabrication process, the top-most chip tier is assembled upside down and the substrate material is removed. This places the polysilicon layer, which is used to create geometries with the process' minimum feature size, in close proximity to a fluid channel etched into the top of the stack. By taking advantage of these processing features inherent to "3D chip-stacking" technology, we create electrode arrays that have a gap spacing of 270 nm. Using 3D CMOS technology also provides the ability to densely integrate analog and digital control circuitry for the electrodes by using the additional levels of the chip stack. We show simulations of the system with a physical model of a Kaposi's sarcoma-associated herpes virus, which has a radius of approximately 125 nm, being dielectrophoretically arranged into striped patterns. We also discuss how these striped patterns of trapped nanometer scale particles create an effective diffraction grating which can then be sensed with macro-scale optical techniques.

High-voltage compatible, full-depleted CCD

DOEpatents

Holland, Stephen Edward

2007-09-18

A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high performance, especially when operated at high voltages with full or nearly full depletion of the substrate, the device can also include a guard ring positioned near channel regions, a biased channel stop, and a biased polysilicon electrode over the channel stop.

Evaluation of microfabricated deformable mirror systems

NASA Astrophysics Data System (ADS)

Cowan, William D.; Lee, Max K.; Bright, Victor M.; Welsh, Byron M.

1998-09-01

This paper presents recent result for aberration correction and beam steering experiments using polysilicon surface micromachined piston micromirror arrays. Microfabricated deformable mirrors offer a substantial cost reduction for adaptive optic systems. In addition to the reduced mirror cost, microfabricated mirrors typically require low control voltages, thus eliminating high voltage amplifiers. The greatly reduced cost per channel of adaptive optic systems employing microfabricated deformable mirrors promise high order aberration correction at low cost. Arrays of piston micromirrors with 128 active elements were tested. Mirror elements are on a 203 micrometers 12 by 12 square grid. The overall array size is 2.4 mm square. The arrays were fabricated in the commercially available DARPA supported MUMPs surface micromachining foundry process. The cost per mirror array in this prototyping process is less than 200 dollars. Experimental results are presented for a hybrid correcting element comprised of a lenslet array and piston micromirror array, and for a piston micromirror array only. Also presented is a novel digital deflection micromirror which requires no digital to analog converters, further reducing the cost of adaptive optics system.

Advanced deposition model for thermal activated chemical vapor deposition

NASA Astrophysics Data System (ADS)

Cai, Dang

Thermal Activated Chemical Vapor Deposition (TACVD) is defined as the formation of a stable solid product on a heated substrate surface from chemical reactions and/or dissociation of gaseous reactants in an activated environment. It has become an essential process for producing solid film, bulk material, coating, fibers, powders and monolithic components. Global market of CVD products has reached multi billions dollars for each year. In the recent years CVD process has been extensively used to manufacture semiconductors and other electronic components such as polysilicon, AlN and GaN. Extensive research effort has been directed to improve deposition quality and throughput. To obtain fast and high quality deposition, operational conditions such as temperature, pressure, fluid velocity and species concentration and geometry conditions such as source-substrate distance need to be well controlled in a CVD system. This thesis will focus on design of CVD processes through understanding the transport and reaction phenomena in the growth reactor. Since the in situ monitor is almost impossible for CVD reactor, many industrial resources have been expended to determine the optimum design by semi-empirical methods and trial-and-error procedures. This approach has allowed the achievement of improvements in the deposition sequence, but begins to show its limitations, as this method cannot always fulfill the more and more stringent specifications of the industry. To resolve this problem, numerical simulation is widely used in studying the growth techniques. The difficulty of numerical simulation of TACVD crystal growth process lies in the simulation of gas phase and surface reactions, especially the latter one, due to the fact that very limited kinetic information is available in the open literature. In this thesis, an advanced deposition model was developed to study the multi-component fluid flow, homogeneous gas phase reactions inside the reactor chamber, heterogeneous surface reactions on the substrate surface, conductive, convective, inductive and radiative heat transfer, species transport and thereto-elastic stress distributions. Gas phase and surface reactions are studied thermodynamically and kinetically. Based on experimental results, detailed reaction mechanisms are proposed and the deposition rates are predicted. The deposition model proposed could be used for other experiments with similar operating conditions. Four different growth systems are presented in this thesis to discuss comprehensive transport phenomena in crystal growth from vapor. The first is the polysilicon bulk growth by modified Siemens technique in which a silicon tube is used as the starting material. The research effort has been focused on system design, geometric and operating parameters optimization, and heterogeneous and homogeneous silane pyrolysis analysis. The second is the GaN thin film growth by iodine vapor phase epitaxy technique. Heat and mass transport is studied analytically and numerically. Gas phase and surface reactions are analyzed thermodynamically and kinetically. Quasi-equilibrium and kinetic deposition models are developed to predict the growth rate. The third one is the AlN thin film growth by halide vapor phase epitaxy technique. The effects of gas phase and surface reactions on the crystal growth rate and deposition uniformity are studied. The last one is the AlN sublimation growth system. The research effort has been focused on the effect of thermal environment evolution on the crystal growth process. The thermoelastic stress formed in the as-grown AlN crystal is also calculated.

Advancing MEMS Technology Usage through the MUMPS (Multi-User MEMS Processes) Program

NASA Technical Reports Server (NTRS)

Koester, D. A.; Markus, K. W.; Dhuler, V.; Mahadevan, R.; Cowen, A.

1995-01-01

In order to help provide access to advanced micro-electro-mechanical systems (MEMS) technologies and lower the barriers for both industry and academia, the Microelectronic Center of North Carolina (MCNC) and ARPA have developed a program which provides users with access to both MEMS processes and advanced electronic integration techniques. The four distinct aspects of this program, the multi-user MEMS processes (MUMP's), the consolidated micro-mechanical element library, smart MEMS, and the MEMS technology network are described in this paper. MUMP's is an ARPA-supported program created to provide inexpensive access to MEMS technology in a multi-user environment. It is both a proof-of-concept and educational tool that aids in the development of MEMS in the domestic community. MUMP's technologies currently include a 3-layer poly-silicon surface micromachining process and LIGA (lithography, electroforming, and injection molding) processes that provide reasonable design flexibility within set guidelines. The consolidated micromechanical element library (CaMEL) is a library of active and passive MEMS structures that can be downloaded by the MEMS community via the internet. Smart MEMS is the development of advanced electronics integration techniques for MEMS through the application of flip chip technology. The MEMS technology network (TechNet) is a menu of standard substrates and MEMS fabrication processes that can be purchased and combined to create unique process flows. TechNet provides the MEMS community greater flexibility and enhanced technology accessibility.

Selective etchant for oxide sacrificial material in semiconductor device fabrication

DOEpatents

Clews, Peggy J.; Mani, Seethambal S.

2005-05-17

An etching composition and method is disclosed for removing an oxide sacrificial material during manufacture of semiconductor devices including micromechanical, microelectromechanical or microfluidic devices. The etching composition and method are based on the combination of hydrofluoric acid (HF) and sulfuric acid (H.sub.2 SO.sub.4). These acids can be used in the ratio of 1:3 to 3:1 HF:H.sub.2 SO.sub.4 to remove all or part of the oxide sacrificial material while providing a high etch selectivity for non-oxide materials including polysilicon, silicon nitride and metals comprising aluminum. Both the HF and H.sub.2 SO.sub.4 can be provided as "semiconductor grade" acids in concentrations of generally 40-50% by weight HF, and at least 90% by weight H.sub.2 SO.sub.4.

Compliant displacement-multiplying apparatus for microelectromechanical systems

DOEpatents

Kota, Sridhar; Rodgers, M. Steven; Hetrick, Joel A.

2001-01-01

A pivotless compliant structure is disclosed that can be used to increase the geometric advantage or mechanical advantage of a microelectromechanical (MEM) actuator such as an electrostatic comb actuator, a capacitive-plate electrostatic actuator, or a thermal actuator. The compliant structure, based on a combination of interconnected flexible beams and cross-beams formed of one or more layers of polysilicon or silicon nitride, can provide a geometric advantage of from about 5:1 to about 60:1 to multiply a 0.25-3 .mu.m displacement provided by a short-stroke actuator so that such an actuator can be used to generate a displacement stroke of about 10-34 .mu.m to operate a ratchet-driven MEM device or a microengine. The compliant structure has less play than conventional displacement-multiplying devices based on lever arms and pivoting joints, and is expected to be more reliable than such devices. The compliant structure and an associated electrostatic or thermal actuator can be formed on a common substrate (e.g. silicon) using surface micromachining.

Piezo-Electrochemical Transducer Effect (PECT) Intercalated Graphite Micro-Electromechanical Actuators

DTIC Science & Technology

2007-11-01

fabrication foibles, and the AFRL/SN staff for being there when I couldn’t get things in the cleanroom to work. To Dr. Benji Maruyama, the insight into...Knowing these limitations, one can think back to 1974, when one man was the childhood hero of thousands of American youth. He wasn’t superman , he was...presents an example of how a single hot arm polysilicon electrothermal actuator operates. These characteristics apply equally well, albeit with

An ultra-sensitive DeltaR/R measurement system for biochemical sensors using piezoresistive micro-cantilevers.

PubMed

Nag, Sudip; Kale, Nitin S; Rao, V; Sharma, Dinesh K

2009-01-01

Piezoresistive micro-cantilevers are interesting bio-sensing tool whose base resistance value (R) changes by a few parts per million (DeltaR) in deflected conditions. Measuring such a small deviation is always being a challenge due to noise. An advanced and reliable DeltaR/R measurement scheme is presented in this paper which can sense resistance changes down to 6 parts per million. The measurement scheme includes the half-bridge connected micro-cantilevers with mismatch compensation, precision op-amp based filters and amplifiers, and a lock-in amplifier based detector. The input actuating sine wave is applied from a function generator and the output dc voltage is displayed on a digital multimeter. The calibration is performed and instrument sensitivity is calculated. An experimental set-up using a probe station is discussed that demonstrates a combined performance of the measurement system and SU8-polysilicon cantilevers. The deflection sensitivity of such polymeric cantilevers is calculated. The system will be highly useful to detect bio-markers such as myoglobin and troponin that are released in blood during or after heart attacks.

Barcode tagging of human oocytes and embryos to prevent mix-ups in assisted reproduction technologies.

PubMed

Novo, Sergi; Nogués, Carme; Penon, Oriol; Barrios, Leonardo; Santaló, Josep; Gómez-Martínez, Rodrigo; Esteve, Jaume; Errachid, Abdelhamid; Plaza, José Antonio; Pérez-García, Lluïsa; Ibáñez, Elena

2014-01-01

Is the attachment of biofunctionalized polysilicon barcodes to the outer surface of the zona pellucida an effective approach for the direct tagging and identification of human oocytes and embryos during assisted reproduction technologies (ARTs)? The direct tagging system based on lectin-biofunctionalized polysilicon barcodes of micrometric dimensions is simple, safe and highly efficient, allowing the identification of human oocytes and embryos during the various procedures typically conducted during an assisted reproduction cycle. Measures to prevent mismatching errors (mix-ups) of the reproductive samples are currently in place in fertility clinics, but none of them are totally effective and several mix-up cases have been reported worldwide. Using a mouse model, our group has previously developed an effective direct embryo tagging system which does not interfere with the in vitro and in vivo development of the tagged embryos. This system has now been tested in human oocytes and embryos. Fresh immature and mature fertilization-failed oocytes (n = 21) and cryopreserved day 1 embryos produced by in vitro fertilization (IVF) or intracytoplasmic sperm injection (ICSI) (n = 205) were donated by patients (n = 76) undergoing ARTs. In vitro development rates, embryo quality and post-vitrification survival were compared between tagged (n = 106) and non-tagged (control) embryos (n = 99). Barcode retention and identification rates were also calculated, both for embryos and for oocytes subjected to a simulated ICSI and parthenogenetic activation. Experiments were conducted from January 2012 to January 2013. Barcodes were fabricated in polysilicon and biofunctionalizated with wheat germ agglutinin lectin. Embryos were tagged with 10 barcodes and cultured in vitro until the blastocyst stage, when they were either differentially stained with propidium iodide and Hoechst or vitrified using the Cryotop method. Embryo quality was also analyzed by embryo grading and time-lapse monitoring. Injected oocytes were parthenogenetically activated using ionomycin and 6-dimethylaminopurine. Blastocyst development rates of tagged (27/58) and non-tagged embryos (24/51) were equivalent, and no significant differences in the timing of key morphokinetic parameters and the number of inner cell mass cells were detected between the two groups (tagged: 24.7 ± 2.5; non-tagged: 22.3 ± 1.9), indicating that preimplantation embryo potential and quality are not affected by the barcodes. Similarly, re-expansion rates of vitrified-warmed tagged (19/21) and non-tagged (16/19) blastocysts were similar. Global identification rates of 96.9 and 89.5% were obtained in fresh (mean barcode retention: 9.22 ± 0.13) and vitrified-warmed (mean barcode retention: 7.79 ± 0.35) tagged embryos, respectively, when simulating an automatic barcode reading process, though these rates were increased to 100% just by rotating the embryos during barcode reading. Only one of the oocytes lost one barcode during intracytoplasmic injection (100% identification rate) and all oocytes retained all the barcodes after parthenogenetic activation. Although the direct embryo tagging system developed is effective, it only allows the identification and traceability of oocytes destined for ICSI and embryos. Thus, the traceability of all reproductive samples (oocytes destined for IVF and sperm) is not yet ensured. The direct embryo tagging system developed here provides fertility clinics with a novel tool to reduce the risk of mix-ups in human ARTs. The system can also be useful in research studies that require the individual identification of oocytes or embryos and their individual tracking. This study was supported by the Sociedad Española de Fertilidad, the Spanish Ministry of Education and Science (TEC2011-29140-C03) and the Generalitat de Catalunya (2009SGR-00282 and 2009SGR-00158). The authors do not have any competing interests.

Micromachined Precision Inertial Instruments

DTIC Science & Technology

2003-11-01

vol. 40, pp. 903-908, 1993. [9] J. D. Zook, D. W. Burns, H. Guckel, J. J. Sniegowski, R . L. Engelstad, and Z. Feng, "Characteristics of polysilicon...285-288, 2000. [14] B. E. Boser and R . T. Howe, "Surface micromachined accelerometers," IEEE Journal of Solid-State Circuits, vol. 31, pp. 366-375...pp. 81-84, 2003. [23] I. O. Inc., "Si-Flex 1500-ULND Evaluation Board, Single Channel Digital Output," 2003. [24] H. Luo, G. K. Fedder, and L. R

MCT Detectors and ROICS for Various Format MWIR and LWIR Arrays

DTIC Science & Technology

2009-10-01

ABSTRACT Silicon ROICs for MCT LWIR (4x288, 6x576) and MWIR (128x128) diode matrix arrays were designed, manufactured and tested. MCT layers...of polysilicon and two metallization levels. MCT Detectors and ROICs for Various Format MWIR and LWIR Arrays RTO-MP-SET-151 7 - 1...Format MWIR and LWIR Arrays 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) 5d. PROJECT NUMBER 5e. TASK NUMBER 5f

Polysilicon photoconductor for integrated circuits

DOEpatents

Hammond, Robert B.; Bowman, Douglas R.

1989-01-01

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

Polysilicon photoconductor for integrated circuits

DOEpatents

Hammond, Robert B.; Bowman, Douglas R.

1990-01-01

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

Polysilicon photoconductor for integrated circuits

DOEpatents

Hammond, R.B.; Bowman, D.R.

1989-04-11

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response. 6 figs.

Development and Packaging of Microsystems Using Foundry Services

DTIC Science & Technology

1998-06-01

DEVELOPMENT AND PACKAGING OF MICROSYSTEMS USING FOUNDRY SERVICES Jeffrey T. Butler, BSEE, MSEE Captain, USAF Approved: Paul H . Ostdiek, PhD, Lt...structural polysilicon layers. CMOS Device Area Micromechanical Device Area arsenic-daped epitaxial layer >J1M* ’ MM t° H 0J n-type ailioon...Ö ♦ * ♦ m B 1 —i ft H 035 0.045 0.055 0.065 0.075 Power Applied to Driver (W) (b) Figure 4-4. (a) Driver output loading

Chip-To-Chip Optical Interconnection Using MEMS Mirrors

DTIC Science & Technology

2009-03-26

the Figure 2.3: SEM of a 2D micromirror with embedded polysilicon circuit paths within the frame structures which drives individual thermal actuation...single-crystal silicon micromirror for large bi-directional 2d scanning applications,” Sens. and Actuators, A, vol. 130-131, pp. 454–460, 8/14 2006. 14...thesis (m.s.), AFIT, Mar 2008. AFIT/GEO/ENP/08-03. 17. B. McCarthy, V. M. Bright, and J. A. Neff, “A multi-component solder self- assembled micromirror

Advanced Inverter Technology.

DTIC Science & Technology

1984-07-01

polysilicon gates. They have con- sistently demonstrated total dose tolerance in the l05 rad (Si) to 1 0b rad (Si) range. They have also demonstrated...FPGs. Because there are two full bridges for one direction of resonant current two SGRs uxust be fired for each bridge, :.:: oL total of tour for the...less than 0.5 W. 2.5.4.4 BLoc-k Diagram - Figure 2.5.4-6 is a block diagram ol thC three-phase unit. All of the input and output signals for the three

Modelling of gecko foot for future robot application

NASA Astrophysics Data System (ADS)

Kamaruddin, A.; Ong, N. R.; Aziz, M. H. A.; Alcain, J. B.; Haimi, W. M. W. N.; Sauli, Z.

2017-09-01

Every gecko has an approximately million microscale hairs called setae which made it easy for them to cling from different surfaces at any orientation with the aid of Van der Waals force as the primary mechanism used to adhere to any contact surfaces. In this paper, a strain simulation using Comsol Multiphysic Software was conducted on a 3D MEMS model of an actuated gecko foot with the aim of achieving optimal sticking with various polymetric materials for future robots application. Based on the stress and strain analyses done on the seven different polymers, it was found that polysilicon had the best result which was nearest to 0%, indicating the strongest elasticity among the others. PDMS on the hand, failed in the simulation due to its bulk-like nature. Thus, PDMS was not suitable to be used for further study on gecko foot robot.

Mechanical behavior simulation of MEMS-based cantilever beam using COMSOL multiphysics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Acheli, A., E-mail: aacheli@cdta.dz; Serhane, R.

This paper presents the studies of mechanical behavior of MEMS cantilever beam made of poly-silicon material, using the coupling of three application modes (plane strain, electrostatics and the moving mesh) of COMSOL Multi-physics software. The cantilevers playing a key role in Micro Electro-Mechanical Systems (MEMS) devices (switches, resonators, etc) working under potential shock. This is why they require actuation under predetermined conditions, such as electrostatic force or inertial force. In this paper, we present mechanical behavior of a cantilever actuated by an electrostatic force. In addition to the simplification of calculations, the weight of the cantilever was not taken intomore » account. Different parameters like beam displacement, electrostatics force and stress over the beam have been calculated by finite element method after having defining the geometry, the material of the cantilever model (fixed at one of ends but is free to move otherwise) and his operational space.« less

Fabrication of microfluidic integrated biosensor

NASA Astrophysics Data System (ADS)

Adam, Tijjani; Dhahi, Th S.; Mohammed, Mohammed; Hashim, U.; Noriman, N. Z.; Dahham, Omar S.

2017-09-01

An event of miniaturizing for sensor systems to carry out biological diagnostics are gaining wade spread acceptance. The system may contain several different sensor units for the detection of specific analyte, the analyte to be detected might be any kind of biological molecules (DNA, mRNA or proteins) or chemical substances. In most cases, the detection is based on receptor-ligand binding like DNA hybridization or antibody-antigen interaction, achieving this on a nanostructure. DNA or protein must be attached to certain locations within the structure. Critical for this is to have a robust binding chemistry to the surface in the microstructure. Here we successfully designed and fabricated microfluidics element for passive fluid delivery into polysilicon Nanowire sensing domain, we further demonstrated a very simple and effective way of integrating the two devices to give full functionalities of laboratory on a single chip. The sensing element was successfully surface modified and tested on real biomedical clinical sample for evaluation and validation.

Characteristics of carbon nanotubes based micro-bubble generator for thermal jet printing.

PubMed

Zhou, Wenli; Li, Yupeng; Sun, Weijun; Wang, Yunbo; Zhu, Chao

2011-12-01

We propose a conceptional thermal printhead with dual microbubble generators mounted parallel in each nozzle chamber, where multiwalled carbon nanotubes are adopted as heating elements with much higher energy efficiency than traditional approaches using noble metals or polysilicon. Tailing effect of droplet can be excluded by appropriate control of grouped bubble generations. Characteristics of the corresponding micro-fabricated microbubble generators were comprehensively studied before the formation of printhead. Electrical properties of the microheaters on glass substrate in air and performance of bubble generation underwater focusing on the relationships between input power, device resistance and bubble behavior were probed. Proof-of-concept bubble generations grouped to eliminate the tailing effect of droplet were performed indicating precise pattern with high resolution could be realized by this kind of printhead. Experimental results revealed guidance to the geometric design of the printhead as well as its fabrication margin and the electrical control of the microbubble generators.

Sensors and sensor systems for guidance and navigation II; Proceedings of the Meeting, Orlando, FL, Apr. 22, 23, 1992

NASA Astrophysics Data System (ADS)

Welch, Sharon S.

Topics discussed in this volume include aircraft guidance and navigation, optics for visual guidance of aircraft, spacecraft and missile guidance and navigation, lidar and ladar systems, microdevices, gyroscopes, cockpit displays, and automotive displays. Papers are presented on optical processing for range and attitude determination, aircraft collision avoidance using a statistical decision theory, a scanning laser aircraft surveillance system for carrier flight operations, star sensor simulation for astroinertial guidance and navigation, autonomous millimeter-wave radar guidance systems, and a 1.32-micron long-range solid state imaging ladar. Attention is also given to a microfabricated magnetometer using Young's modulus changes in magnetoelastic materials, an integrated microgyroscope, a pulsed diode ring laser gyroscope, self-scanned polysilicon active-matrix liquid-crystal displays, the history and development of coated contrast enhancement filters for cockpit displays, and the effect of the display configuration on the attentional sampling performance. (For individual items see A93-28152 to A93-28176, A93-28178 to A93-28180)

Large area tunnel oxide passivated rear contact n -type Si solar cells with 21.2% efficiency: Large area tunnel oxide passivated rear contact n -type Si solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, Yuguo; Upadhyaya, Vijaykumar; Chen, Chia-Wei

This paper reports on the implementation of carrier-selective tunnel oxide passivated rear contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent rear contact passivation with implied open-circuit voltage iVoc of 714mV and saturation current density J0b of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids,more » this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers.« less

Resonant capacitive MEMS acoustic emission transducers

NASA Astrophysics Data System (ADS)

Ozevin, D.; Greve, D. W.; Oppenheim, I. J.; Pessiki, S. P.

2006-12-01

We describe resonant capacitive MEMS transducers developed for use as acoustic emission (AE) detectors, fabricated in the commercial three-layer polysilicon surface micromachining process (MUMPs). The 1 cm square device contains six independent transducers in the frequency range between 100 and 500 kHz, and a seventh transducer at 1 MHz. Each transducer is a parallel plate capacitor with one plate free to vibrate, thereby causing a capacitance change which creates an output signal in the form of a current under a dc bias voltage. With the geometric proportions we employed, each transducer responds with two distinct resonant frequencies. In our design the etch hole spacing was chosen to limit squeeze film damping and thereby produce an underdamped vibration when operated at atmospheric pressure. Characterization experiments obtained by capacitance and admittance measurements are presented, and transducer responses to physically simulated AE source are discussed. Finally, we report our use of the device to detect acoustic emissions associated with crack initiation and growth in weld metal.

Emerging technologies in microguidance and control

NASA Technical Reports Server (NTRS)

Weinberg, Marc S.

1993-01-01

Employing recent advances in microfabrication, the Charles Stark Draper Laboratory has developed inertial guidance instruments of very small size and low cost. Microfabrication employs the batch processing techniques of solid state electronics, such as photolithography, diffusion, and etching, to carve mechanical parts. Within a few years, microfabricated gyroscopes should perform in the 10 to 100 deg/h range. Microfabricated accelerometers have demonstrated performance in the 50 to 500 microgravity range. These instruments will result in not only the redesign of conventional military products, but also new applications that could not exist without small, inexpensive sensors and computing. Draper's microfabricated accelerometers and gyroscopes will be described and test results summarized. Associated electronics and control issues will also be addressed. Gimballed, vibrating gyroscopes and force rebalance accelerometers constructed from bulk silicon, polysilicon surface-machined tuning fork gyroscopes, and quartz resonant accelerometers and gyroscopes are examined. Draper is pursuing several types of devices for the following reasons: to address wide ranges of performance, to realize construction in a flat pack, and to lessen the risks associated with emerging technologies.

Microfabricated microengine for use as a mechanical drive and power source in the microdomain and fabrication process

DOEpatents

Garcia, E.J.; Sniegowski, J.J.

1997-05-20

A microengine uses two synchronized linear actuators as a power source and converts oscillatory motion from the actuators into rotational motion via direct linkage connection to an output gear or wheel. The microengine provides output in the form of a continuously rotating output gear that is capable of delivering drive torque to a micromechanism. The microengine can be operated at varying speeds and its motion can be reversed. Linear actuators are synchronized in order to provide linear oscillatory motion to the linkage means in the X and Y directions according to a desired position, rotational direction and speed of said mechanical output means. The output gear has gear teeth on its outer perimeter for directly contacting a micromechanism requiring mechanical power. The gear is retained by a retaining means which allows said gear to rotate freely. The microengine is microfabricated of polysilicon on one wafer using surface micromachining batch fabrication. 30 figs.

Design, fabrication, and delivery of a charge injection device as a stellar tracking device

NASA Technical Reports Server (NTRS)

Burke, H. K.; Michon, G. J.; Tomlinson, H. W.; Vogelsong, T. L.; Grafinger, A.; Wilson, R.

1979-01-01

Six 128 x 128 CID imagers fabricated on bulk silicon and with thin polysilicon upper-level electrodes were tested in a star tracking mode. Noise and spectral response were measured as a function of temperature over the range of +25 C to -40 C. Noise at 0 C and below was less than 40 rms carriers/pixel for all devices at an effective noise bandwidth of 150 Hz. Quantum yield for all devices averaged 40% from 0.4 to 1.0 microns with no measurable temperature dependence. Extrapolating from these performance parameters to those of a large (400 x 400) array and accounting for design and processing improvements, indicates that the larger array would show a further improvement in noise performance -- on the order of 25 carriers. A preliminary evaluation of the projected performance of the 400 x 400 array and a representative set of star sensor requirements indicates that the CID has excellent potential as a stellar tracking device.

Correlation of Radiation Dosage With Mechanical Properties of Thin Films

NASA Technical Reports Server (NTRS)

Newton, R. L.

2003-01-01

The objective of this investigation was to examine the relationship between irradiation level (proton dose), microstructure, and stress levels in chemical vapor deposited diamond and polysilicon film using crosssectioned specimens. However, the emphasis was placed on the diamond specimen because diamond holds much promise for use in advanced technologies. The use of protons allows not only the study of the charged particle that may cause the most microstructural damage in Earth-orbit microelectromechanical systems (MEMS) devices, but also allows the study of relatively deeply buried damage inside the diamond material. Using protons allows these studies without having to resort to megaelectronvolt implant energies that may create extensive damage due to the high energy that is needed for the implantation process. Since 1 MEMS devices operating in space will not have an opportunity to reverse radiation damage via annealing, only nonannealed specimens were investigated. The following three high spatial resolution techniques were used to examine these relationships: (I) Scanning electron microscopy, (2) micro-Raman spectroscopy, and (3) micro x-ray diffraction.

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down tomore » the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gray, D.C.; Tepermeister, I.; Sawin, H.H.

A multiple beam apparatus has been constructed to facilitate the study of ion-enhanced fluorine chemistry on undoped polysilicon and silicon dioxide surfaces by allowing the fluxes of fluorine (F) atoms and argon (Ar{sup +}) ions to be independently varied over several orders of magnitude. The chemical nature of the etching surfaces has been investigated following the vacuum transfer of the sample dies to an adjoining x-ray photoelectron spectroscopy facility. The etching {open_quotes}enhancement{close_quotes} effect of normally incident Ar{sup +} ions has been quantified over a wide range of ion energy through the use of Kaufman and electron cyclotron resonance-type ion sources.more » The increase in per ion etching yield of fluorine saturated silicon and silicon dioxide surfaces with increasing ion energy (E{sub ion}) was found to scale as (E{sub ion}{sup 1/2}-E{sub th}{sup 1/2}), where E{sub th} is the etching threshold energy for the process. Simple near-surface site occupation models have been proposed for the quantification of the ion-enhanced etching kinetics in these systems. Acceptable agreement has been found in comparison of these Ar{sup +}/F etching model predictions with similar Ar{sup +}/XeF{sub 2} studies reported in the literature, as well as with etching rate measurements made in F-based plasmas of gases such as SF{sub 6} and NF{sub 3}. 69 refs., 12 figs., 6 tabs.« less

MEMS ultrasonic transducer for monitoring of steel structures

NASA Astrophysics Data System (ADS)

Jain, Akash; Greve, David W.; Oppenheim, Irving J.

2002-06-01

Ultrasonic methods can be used to monitor crack propagation, weld failure, or section loss at critical locations in steel structures. However, ultrasonic inspection requires a skilled technician, and most commonly the signal obtained at any inspection is not preserved for later use. A preferred technology would use a MEMS device permanently installed at a critical location, polled remotely, and capable of on-chip signal processing using a signal history. We review questions related to wave geometry, signal levels, flaw localization, and electromechanical design issues for microscale transducers, and then describe the design, characterization, and initial testing of a MEMS transducer to function as a detector array. The device is approximately 1-cm square and was fabricated by the MUMPS process. The chip has 23 sensor elements to function in a phased array geometry, each element containing 180 hexagonal polysilicon diaphragms with a typical leg length of 49 microns and an unloaded natural frequency near 3.5 MHz. We first report characterization studies including capacitance-voltage measurements and admittance measurements, and then report initial experiments using a conventional piezoelectric transducer for excitation, with successful detection of signals in an on-axis transmission experiment and successful source localization from phased array performance in an off-axis transmission experiment.

Spin Measurements of an Electron Bound to a Single Phosphorous Donor in Silicon

NASA Astrophysics Data System (ADS)

Luhman, D. R.; Nguyen, K.; Tracy, L. A.; Carr, S. M.; Borchardt, J.; Bishop, N. C.; Ten Eyck, G. A.; Pluym, T.; Wendt, J.; Carroll, M. S.; Lilly, M. P.

2014-03-01

The spin of an electron bound to a single donor implanted in silicon is potentially useful for quantum information processing. We report on our efforts to measure and manipulate the spin of an electron bound to a single P donor in silicon. A low number of P donors are implanted using a self-aligned process into a silicon substrate in close proximity to a single-electron-transistor (SET) defined by lithographically patterned polysilicon gates. The SET is used to sense the occupancy of the electron on the donor and for spin read-out. An adjacent transmission line allows the application of microwave pulses to rotate the spin of the electron. We will present data from various experiments designed to exploit these capabilities. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

Sources of stress gradients in electrodeposited Ni MEMS.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hearne, Sean Joseph; Floro, Jerrold Anthony; Dyck, Christopher William

2004-06-01

The ability of future integrated metal-semiconductor micro-systems such as RF MEMS to perform highly complex functions will depend on developing freestanding metal structures that offer improved conductivity and reflectivity over polysilicon structures. For example, metal-based RF MEMS technology could replace the bulky RF system presently used in communications, navigation, and avionics systems. However, stress gradients that induce warpage of active components have prevented the implementation of this technology. Figure 1, is an interference micrograph image of a series of cantilever beams fabricated from electrodeposited Ni. The curvature in the beams was the result of stress gradients intrinsic to the electrodepositionmore » process. To study the sources of the stress in electrodeposition of Ni we have incorporated a wafer curvature based stress sensor, the multibeam optical stress sensor, into an electrodeposition cell. We have determined that there are two regions of stress induced by electrodepositing Ni from a sulfamate-based bath (Fig 2). The stress evolution during the first region, 0-1000{angstrom}, was determined to be dependent only on the substrate material (Au vs. Cu), whereas the stress evolution during the second region, >1000{angstrom}, was highly dependent on the deposition conditions. In this region, the stress varied from +0.5 GPa to -0.5GPa, depending solely on the deposition rate. We examined four likely sources for the compressive intrinsic stress, i.e. reduction in tensile stress, and determined that only the adatom diffusion into grain boundaries model of Sheldon, et al. could account for the observed compressive stress. In the presentation, we shall discuss the compressive stress generation mechanisms considered and the ramifications of these results on fabrication of electrodeposited Ni for MEMS applications.« less

Single-Crystalline InGaAs/InP Dense Micro-Pillar Forest on Poly-Silicon Substrates for Low-Cost High-Efficiency Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang-Hasnain, Constance

2015-05-04

The ultimate goal of this project is to develop a photovoltaic system high conversion efficiency (>20%) using high quality III-V compound-based three-dimensional micro-structures on silicon and poly-silicon. Such a PV-system could be of very low cost due to minimum usages of III-V materials. This project will address the barriers that currently hamper the performance of solar cells based on three-dimensional micro-structures. To accomplish this goal the project is divided into 4 tasks, each dealing with a different aspect of the project: materials quality, micropillar growth control, light management, and pillar based solar cells. Materials Quality: the internal quantum efficiency (IQE)more » - by which is meant here the internal fluorescence yield - of the micro-pillars has to be increased. We aim at achieving an IQE of 45% by the end of the first year. By the end of the second year there will be a go-no-go milestone of 65% IQE. By the end of year 3 and 4 we aim to achieve 75% and 90% IQE, respectively. Micropillar growth control: dense forests of micropillars with high fill ratios need to be grown. Pillars within forests should show minimum variations in size. We aim at achieving fill ratios of 2%, 10%, >15%, >20% in years 1, 2, 3, and 4, respectively. Variations in dimension should be minimized by site-controlled growth of pillars. By the end of year 1 we will aim at achieving site-controlled growth with > 15% yield. By end of year 2 the variation of critical pillar dimensions should be less than 25%. Light management: high light absorption in the spectral range of the sun has been to be demonstrated for the micropillar forests. By the end of year 1 we will employ FDTD simulation techniques to demonstrate that pillar forests with fill ratios <20% can achieve 99% light absorption. By end of year 2 our original goal was to demonstrate >85% absorption. By end of year 3 > 90% absorption should be demonstrated. Pillar based solar cells: devices will be studied to explore ways to achieve high open-circuit voltages which will lead to high efficiency micropillar-based solar cells. We will start on single pillar devices and the findings in these studies should pave the way for devices based on forests/ arrays of pillars. By the end of the second year we aim to demonstrate a single pillar device with an open-circuit voltage of 0.7 V, as well as a pillar-forest based device with 8% conversion efficiency. By the end of year 3 these numbers should be improved to 0.9 V open-circuit voltage for single pillar devices and >15% efficiency for forest/array-based devices. We will aim to realize a device with 20% efficiency by the end of the project period.« less

MEMS Lens Scanners for Free-Space Optical Interconnects

DTIC Science & Technology

2011-12-15

22] D. C. O ? Brien , G. E. Faulkner, T. D. Wilkinson, B. Robertson, and D. G. Leyva, “Design and Analysis of an Adaptive Board-to-Board Dynamic...trenches on 20 µm device layer. (c-d) Deposit and pattern low-stress nitride and polysilicon for electrical isolation. (e) DRIE for MEMS structures...Telecentric Lateral Shift Board Translation (mm) D is p la c e m e n t o f S p o t (  m ) 0 0.5 1 1.5 2 0 100 200 300 400 Tilt Error Board Tilt (deg) D

Specific spice modeling of microcrystalline silicon TFTs

NASA Astrophysics Data System (ADS)

Moustapha, O.; Bui, V. D.; Bonnassieux, Y.; Parey, J. Y.

2008-03-01

In this paper we present a specific spice static and dynamic model of microcrystalline silicon (μc-Si) thin film transistors (TFTs) taking into account the access resistances and the capacitors contributions. The previously existing models of amorphous silicon and polysilicon TFTs were not completely suited, so we combined them to build a new specific model of μc-Si TFTs. The reliability of the model is then checked by the comparison of experimental measurements to simulations and by simulating the characteristics of some electronic devices (OLED pixels, inverters, and so on).

Investigation of optical information for a single micro grating device combined with MATA by SMart process

NASA Astrophysics Data System (ADS)

Tsai, Chien-Chung; Huang, Yi-Chao; Yang, Tsa-Hsien; Chen, Jen-Chieh

2006-01-01

The concentric circles type and saw-tooth type of micro grating device based upon the diffraction theory are proposed in this study. The geometry dimension of micro optical device is 200 × 200 μm2, the interval of grating is 4 μm, and the depth is 0.75 μm. The Micro Array Thermal Actuator, MATA, is applied to drive the micro grating device, and the pre-elevating structure is designed to lift the micro grating device by the residual stress of polysilicon combined with metal. The micro grating device is fabricated by Surface Micromachining for applications and research technology platform, SMart, common process. The incident ray of He-Ne laser focused by a lens which focal length is 250 mm is applied to be the light source for the experiment, and then analyzes the optical information of the outgoing ray. From the experimental results, the basic optical features are examined based upon the concentric circles type and saw-tooth type of micro grating device, respectively. The outgoing ray angle of central spot is 60° in theory. The measurements are 59.475° for the concentric circles type and 59.88° for the saw-tooth type. The outgoing ray angle of the first stripe is 46.9° in theory, and 46.81° for the concentric circles type and 46.67° for the saw-tooth type are measured from the experiment. The variation of outgoing ray angle is smaller than 1% compared the measurement results with theory of diffraction on the central spot and first stripe characteristics. The work successfully demonstrates the micro grating device with highly accurate performance by the verification of optical information. All of the efforts will be contributed to Controlled Blazed Diffraction micro grating device, CBDMG, and that will be the main device of Integrate Opto-Electronics applied on display to develop in the future.

Fault handling schemes in electronic systems with specific application to radiation tolerance and VLSI design

NASA Technical Reports Server (NTRS)

Attia, John Okyere

1993-01-01

Naturally occurring space radiation particles can produce transient and permanent changes in the electrical properties of electronic devices and systems. In this work, the transient radiation effects on DRAM and CMOS SRAM were considered. In addition, the effect of total ionizing dose radiation of the switching times of CMOS logic gates were investigated. Effects of transient radiation on the column and cell of MOS dynamic memory cell was simulated using SPICE. It was found that the critical charge of the bitline was higher than that of the cell. In addition, the critical charge of the combined cell-bitline was found to be dependent on the gate voltage of the access transistor. In addition, the effect of total ionizing dose radiation on the switching times of CMOS logic gate was obtained. The results of this work indicate that, the rise time of CMOS logic gates increases, while the fall time decreases with an increase in total ionizing dose radiation. Also, by increasing the size of the P-channel transistor with respect to that of the N-channel transistor, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in total ionizing dose radiation. Furthermore, a method was developed for replacing polysilicon feedback resistance of SRAMs with a switched capacitor network. A switched capacitor SRAM was implemented using MOS Technology. The critical change of the switched capacitor SRAM has a very large critical charge. The results of this work indicate that switched capacitor SRAM is a viable alternative to SRAM with polysilicon feedback resistance.

Dual-gate polysilicon nanoribbon biosensors enable high sensitivity detection of proteins.

PubMed

Zeimpekis, I; Sun, K; Hu, C; Ditshego, N M J; Thomas, O; de Planque, M R R; Chong, H M H; Morgan, H; Ashburn, P

2016-04-22

We demonstrate the advantages of dual-gate polysilicon nanoribbon biosensors with a comprehensive evaluation of different measurement schemes for pH and protein sensing. In particular, we compare the detection of voltage and current changes when top- and bottom-gate bias is applied. Measurements of pH show that a large voltage shift of 491 mV pH(-1) is obtained in the subthreshold region when the top-gate is kept at a fixed potential and the bottom-gate is varied (voltage sweep). This is an improvement of 16 times over the 30 mV pH(-1) measured using a top-gate sweep with the bottom-gate at a fixed potential. A similar large voltage shift of 175 mV is obtained when the protein avidin is sensed using a bottom-gate sweep. This is an improvement of 20 times compared with the 8.8 mV achieved from a top-gate sweep. Current measurements using bottom-gate sweeps do not deliver the same signal amplification as when using bottom-gate sweeps to measure voltage shifts. Thus, for detecting a small signal change on protein binding, it is advantageous to employ a double-gate transistor and to measure a voltage shift using a bottom-gate sweep. For top-gate sweeps, the use of a dual-gate transistor enables the current sensitivity to be enhanced by applying a negative bias to the bottom-gate to reduce the carrier concentration in the nanoribbon. For pH measurements, the current sensitivity increases from 65% to 149% and for avidin sensing it increases from 1.4% to 2.5%.

Dual-gate polysilicon nanoribbon biosensors enable high sensitivity detection of proteins

NASA Astrophysics Data System (ADS)

Zeimpekis, I.; Sun, K.; Hu, C.; Ditshego, N. M. J.; Thomas, O.; de Planque, M. R. R.; Chong, H. M. H.; Morgan, H.; Ashburn, P.

2016-04-01

We demonstrate the advantages of dual-gate polysilicon nanoribbon biosensors with a comprehensive evaluation of different measurement schemes for pH and protein sensing. In particular, we compare the detection of voltage and current changes when top- and bottom-gate bias is applied. Measurements of pH show that a large voltage shift of 491 mV pH-1 is obtained in the subthreshold region when the top-gate is kept at a fixed potential and the bottom-gate is varied (voltage sweep). This is an improvement of 16 times over the 30 mV pH-1 measured using a top-gate sweep with the bottom-gate at a fixed potential. A similar large voltage shift of 175 mV is obtained when the protein avidin is sensed using a bottom-gate sweep. This is an improvement of 20 times compared with the 8.8 mV achieved from a top-gate sweep. Current measurements using bottom-gate sweeps do not deliver the same signal amplification as when using bottom-gate sweeps to measure voltage shifts. Thus, for detecting a small signal change on protein binding, it is advantageous to employ a double-gate transistor and to measure a voltage shift using a bottom-gate sweep. For top-gate sweeps, the use of a dual-gate transistor enables the current sensitivity to be enhanced by applying a negative bias to the bottom-gate to reduce the carrier concentration in the nanoribbon. For pH measurements, the current sensitivity increases from 65% to 149% and for avidin sensing it increases from 1.4% to 2.5%.

Monolithic composite “pressure + acceleration + temperature + infrared” sensor using a versatile single-sided “SiN/Poly-Si/Al” process-module.

PubMed

Ni, Zao; Yang, Chen; Xu, Dehui; Zhou, Hong; Zhou, Wei; Li, Tie; Xiong, Bin; Li, Xinxin

2013-01-16

We report a newly developed design/fabrication module with low-cost single-sided "low-stress-silicon-nitride (LS-SiN)/polysilicon (poly-Si)/Al" process for monolithic integration of composite sensors for sensing-network-node applications. A front-side surface-/bulk-micromachining process on a conventional Si-substrate is developed, featuring a multifunctional SiN/poly-Si/Al layer design for diverse sensing functions. The first "pressure + acceleration + temperature + infrared" (PATIR) composite sensor with the chip size of 2.5 mm × 2.5 mm is demonstrated. Systematic theoretical design and analysis methods are developed. The diverse sensing components include a piezoresistive absolute-pressure sensor (up to 700 kPa, with a sensitivity of 49 mV/MPa under 3.3 V supplied voltage), a piezoresistive accelerometer (±10 g, with a sensitivity of 66 μV/g under 3.3 V and a -3 dB bandwidth of 780 Hz), a thermoelectric infrared detector (with a responsivity of 45 V/W and detectivity of 3.6 × 107 cm·Hz1/2/W) and a thermistor (-25-120 °C). This design/fabrication module concept enables a low-cost monolithically-integrated "multifunctional-library" technique. It can be utilized as a customizable tool for versatile application-specific requirements, which is very useful for small-size, low-cost, large-scale sensing-network node developments.

Flat-plate solar array project. Volume 4: High-efficiency solar cells

NASA Technical Reports Server (NTRS)

Leipold, M.; Cheng, L.; Daud, T.; Mokashi, A.; Burger, D.; Christensen, E. (Editor); Murry, J. (Editor); Bengelsdorf, I. (Editor)

1986-01-01

The High Efficiency Solar Cell Task was assigned the objective of understanding and developing high efficiency solar cell devices that would meet the cost and performance goals of the Flat Plate Solar Array (FSA) Project. The need for research dealing with high efficiency devices was considered important because of the role efficiency plays in reducing price per watt of generated energy. The R&D efforts conducted during the 1982 to 1986 period are summarized to provide understanding and control of energy conversion losses associated with crystalline silicon solar cells. New levels of conversion efficiency were demonstrated. Major contributions were made both to the understanding and reduction of bulk and surface losses in solar cells. For example, oxides, nitrides, and polysilicon were all shown to be potentially useful surface passivants. Improvements in measurement techniques were made and Auger coefficients and spectral absorption data were obtained for unique types of silicon sheets. New modelling software was developed including a program to optimize a device design based on input characteristics of a cell.

Diode laser sensor to monitor HCL in a plasma etch reactor

NASA Astrophysics Data System (ADS)

Kim, Suhong; Klimecky, Pete; Chou, Shang-I.; Jeffries, Jay B.; Terry, Fred L., Jr.; Hanson, Ronald K.

2002-09-01

Absorption measurements of HCl during plasma etching of poly-silicon are made using the P(4) transition in the first vibrational overtone band near 1.79 μm. Single path absorption provides a real-time HCl monitor during etching of six-inch wafers in a commercial Lam Research 9400SE reactor at the University of Michigan. Wavelength modulation at 10.7 MHz is used to distinguish the absorption signal from the strong plasma emission. The laser center frequency is ramp-tuned at 500 Hz providing an HCl measurement every 2ms. Direct absorption measurements without the plasma are used to calibrate the wavelength modulation signal. The minimum detectable absorbance was 5x(10)-6 with 50 ms averaging, leading to an HCl detection limit of ~(10)12cm-3. For a given ratio of the feedstock HBr/Cl2, the measured HCl concentration tracks the average etch rate. These measurements demonstrate the feasibility of a real-time diode laser-based etch rate sensor.

Designing solution-processable air-stable liquid crystalline crosslinkable semiconductors.

PubMed

McCulloch, Iain; Bailey, Clare; Genevicius, Kristijonas; Heeney, Martin; Shkunov, Maxim; Sparrowe, David; Tierney, Steven; Zhang, Weimin; Baldwin, Rodney; Kreouzis, Theo; Andreasen, Jens W; Breiby, Dag W; Nielsen, Martin M

2006-10-15

Organic electronics technology, in which at least the semiconducting component of the integrated circuit is an organic material, offers the potential for fabrication of electronic products by low-cost printing technologies, such as ink jet, gravure offset lithography and flexography. The products will typically be of lower performance than those using the present state of the art single crystal or polysilicon transistors, but comparable to amorphous silicon. A range of prototypes are under development, including rollable electrophoretic displays, active matrix liquid crystal (LC) displays, flexible organic light emitting diode displays, low frequency radio frequency identification tag and other low performance electronics. Organic semiconductors that offer both electrical performance and stability with respect to storage and operation under ambient conditions are required. This work describes the development of reactive mesogen semiconductors, which form large crosslinked LC domains on polymerization within mesophases. These crosslinked domains offer mechanical stability and are inert to solvent exposure in further processing steps. Reactive mesogens containing conjugated aromatic cores, designed to facilitate charge transport and provide good oxidative stability, were prepared and their liquid crystalline properties evaluated. The organization and alignment of the mesogens, both before and after crosslinking, were probed by grazing incidence wide-angle X-ray scattering of thin films. Both time-of-flight and field effect transistor devices were prepared and their electrical characterization reported.

Hole Trapping in Thermal Oxides Grown under Various Oxidation Conditions Using Avalanche Injection in Poly-Silicon Gate Structures

DTIC Science & Technology

1985-03-15

the avalanche field(8). These points are marked Ecrit in the figure and it is seen that they correspond well with the voltage at which Idc begins to...0 *~10-10- Ecrit 10 -11 - I -e --- -- T 20 25 30 35 40 45 50 55 60 vMox (V) Fig. 3-3 I/v characteristics of devices on wafers implanted with...start, the relationship (8) between ND and the field Ecrit was used. Ecrit was the field which will cause avalanching. Clearly, Ecrit also represents the

Design of a Novel MEMS Microgripper with Rotatory Electrostatic Comb-Drive Actuators for Biomedical Applications.

PubMed

Velosa-Moncada, Luis A; Aguilera-Cortés, Luz Antonio; González-Palacios, Max A; Raskin, Jean-Pierre; Herrera-May, Agustin L

2018-05-22

Primary tumors of patients can release circulating tumor cells (CTCs) to flow inside of their blood. The CTCs have different mechanical properties in comparison with red and white blood cells, and their detection may be employed to study the efficiency of medical treatments against cancer. We present the design of a novel MEMS microgripper with rotatory electrostatic comb-drive actuators for mechanical properties characterization of cells. The microgripper has a compact structural configuration of four polysilicon layers and a simple performance that control the opening and closing displacements of the microgripper tips. The microgripper has a mobile arm, a fixed arm, two different actuators and two serpentine springs, which are designed based on the SUMMiT V surface micromachining process from Sandia National Laboratories. The proposed microgripper operates at its first rotational resonant frequency and its mobile arm has a controlled displacement of 40 µm at both opening and closing directions using dc and ac bias voltages. Analytical models are developed to predict the stiffness, damping forces and first torsional resonant frequency of the microgripper. In addition, finite element method (FEM) models are obtained to estimate the mechanical behavior of the microgripper. The results of the analytical models agree very well respect to FEM simulations. The microgripper has a first rotational resonant frequency of 463.8 Hz without gripped cell and it can operate up to with maximum dc and ac voltages of 23.4 V and 129.2 V, respectively. Based on the results of the analytical and FEM models about the performance of the proposed microgripper, it could be used as a dispositive for mechanical properties characterization of circulating tumor cells (CTCs).

Design of a Novel MEMS Microgripper with Rotatory Electrostatic Comb-Drive Actuators for Biomedical Applications

PubMed Central

Velosa-Moncada, Luis A.; Aguilera-Cortés, Luz Antonio; Raskin, Jean-Pierre

2018-01-01

Primary tumors of patients can release circulating tumor cells (CTCs) to flow inside of their blood. The CTCs have different mechanical properties in comparison with red and white blood cells, and their detection may be employed to study the efficiency of medical treatments against cancer. We present the design of a novel MEMS microgripper with rotatory electrostatic comb-drive actuators for mechanical properties characterization of cells. The microgripper has a compact structural configuration of four polysilicon layers and a simple performance that control the opening and closing displacements of the microgripper tips. The microgripper has a mobile arm, a fixed arm, two different actuators and two serpentine springs, which are designed based on the SUMMiT V surface micromachining process from Sandia National Laboratories. The proposed microgripper operates at its first rotational resonant frequency and its mobile arm has a controlled displacement of 40 µm at both opening and closing directions using dc and ac bias voltages. Analytical models are developed to predict the stiffness, damping forces and first torsional resonant frequency of the microgripper. In addition, finite element method (FEM) models are obtained to estimate the mechanical behavior of the microgripper. The results of the analytical models agree very well respect to FEM simulations. The microgripper has a first rotational resonant frequency of 463.8 Hz without gripped cell and it can operate up to with maximum dc and ac voltages of 23.4 V and 129.2 V, respectively. Based on the results of the analytical and FEM models about the performance of the proposed microgripper, it could be used as a dispositive for mechanical properties characterization of circulating tumor cells (CTCs). PMID:29789474

Frequency- and doping-level influence on electric and dielectric properties of PolySi/SiO2/cSi (MOS) structures

NASA Astrophysics Data System (ADS)

Doukhane, N.; Birouk, B.

2018-03-01

The electric and dielectric characteristics of PolySi/SiO2/cSi (MOS) structure, such as series resistance ( R s), dielectric constants ( ɛ') and ( ɛ″), dielectric losses (tan δ), and the ac electric conductivity ( σ ac), were studied in the frequency range 100 kHz-1 MHz for various doping levels and two thicknesses for the polysilicon layer (100 and 175 nm). The experimental results show that the C and G/ ω characteristics are very sensitive to the frequency due to the presence of interface states. Series resistance R s is deduced from C and G/ ω measurements and is plotted as a function of the frequency for various doping levels. It is found to decrease with frequency and doping level. To determine {ɛ ^' }, ɛ″, tan δ, and {σ _{{ac}}}, the admittance technique was used. An interesting behavior of the constants, {ɛ ^' } and ɛ″, was noticed. The {ɛ ^' } values fit led to relations between {ɛ ^' } and the frequency, on one hand, and between {ɛ ^' } and the electric conductivity of the polysilicon layers on the other. These relations make it possible to interpolate directly between two experimental points for a given frequency. The analysis of the results shows that the values of {ɛ ^' }, ɛ″, and tan δ decrease with increasing frequency. This is due to the fact that in the region of low frequencies, interfacial polarization occurs easily, and the interface states between Si and SiO2 contribute to the improvement of the dielectric properties of the PolySi/SiO2/cSi structures. The study also emphasizes that the ac electric conductivity increases with the increase in frequency and doping level; this causes to the reduction in series resistance.

Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

NASA Astrophysics Data System (ADS)

Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

2017-09-01

Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors

NASA Astrophysics Data System (ADS)

Buchanan, D. A.; Marwick, A. D.; Dimaria, D. J.; Dori, L.

1994-09-01

Redistribution of hydrogen caused by hot-electron injection has been studied by hydrogen depth profiling with N-15 nuclear reaction analysis and electrical methods. Internal photoemission and Fowler-Nordheim injection were used for electron injection into large Al-gate and polysilicon-gate capacitors, respectively. A hydrogen-rich layer (about 10(exp 15) atoms/sq cm) observed at the Al/SiO2 interface was found to serve as the source of hydrogen during the hot-electron stress. A small fraction of the hydrogen released from this layer was found to be retrapped near the Si/SiO2 interface for large electron fluences in the Al-gate samples. Within the limit of detectability, about 10(exp 14)/sq cm, no hydrogen was measured using nuclear reaction analysis in the polysilicon-gate samples. The buildup of hydrogen at the Si/SiO2 interface exhibits a threshold at about 1 MV/cm, consistent with the threshold for electron heating in SiO2. In the 'wet' SiO2 films with purposely introduced excess hydrogen, the rate of hydrogen buildup at the Si/SiO2 interface is found to be significantly greater than that found in the 'dry' films. During electron injection, hydrogen redistribution was also confirmed via the deactivation of boron dopant in the silicon substrate. The generation rates of interface states, neutral electron traps, and anomalous positive charge are found to increase with increasing hydrogen buildup in the substrate and the initial hydrogen concentration in the film. It is concluded that the generation of defects is preceded by the hot-electron-induced release and transport of atomic hydrogen and it is the chemical reaction of this species within the metal-oxide-semiconductor structure that generates the electrically active defects.

A Radiation-Tolerant, Low-Power Non-Volatile Memory Based on Silicon Nanocrystal Quantum Dots

NASA Technical Reports Server (NTRS)

Bell, L. D.; Boer, E. A.; Ostraat, M. L.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; deBlauwe, J.; Green, M. L.

2001-01-01

Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO2 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled in program/erase threshold voltage swing was seen during 100,000 program and erase cycles. Additional near-term goals for this project include extensive testing for radiation hardness and the development of artificial layered tunnel barrier heterostructures which have the potential for large speed enhancements for read/write of nanocrystal memory elements, compared with conventional flash devices. Additional information is contained in the original extended abstract.

Monolithic Composite “Pressure + Acceleration + Temperature + Infrared” Sensor Using a Versatile Single-Sided “SiN/Poly-Si/Al” Process-Module

PubMed Central

Ni, Zao; Yang, Chen; Xu, Dehui; Zhou, Hong; Zhou, Wei; Li, Tie; Xiong, Bin; Li, Xinxin

2013-01-01

We report a newly developed design/fabrication module with low-cost single-sided “low-stress-silicon-nitride (LS-SiN)/polysilicon (poly-Si)/Al” process for monolithic integration of composite sensors for sensing-network-node applications. A front-side surface-/bulk-micromachining process on a conventional Si-substrate is developed, featuring a multifunctional SiN/poly-Si/Al layer design for diverse sensing functions. The first “pressure + acceleration + temperature + infrared” (PATIR) composite sensor with the chip size of 2.5 mm × 2.5 mm is demonstrated. Systematic theoretical design and analysis methods are developed. The diverse sensing components include a piezoresistive absolute-pressure sensor (up to 700 kPa, with a sensitivity of 49 mV/MPa under 3.3 V supplied voltage), a piezoresistive accelerometer (±10 g, with a sensitivity of 66 μV/g under 3.3 V and a −3 dB bandwidth of 780 Hz), a thermoelectric infrared detector (with a responsivity of 45 V/W and detectivity of 3.6 × 107 cm·Hz1/2/W) and a thermistor (−25–120 °C). This design/fabrication module concept enables a low-cost monolithically-integrated “multifunctional-library” technique. It can be utilized as a customizable tool for versatile application-specific requirements, which is very useful for small-size, low-cost, large-scale sensing-network node developments. PMID:23325169

Microfabricated microengine with constant rotation rate

DOEpatents

Romero, Louis A.; Dickey, Fred M.

1999-01-01

A microengine uses two synchronized linear actuators as a power source and converts oscillatory motion from the actuators into constant rotational motion via direct linkage connection to an output gear or wheel. The microengine provides output in the form of a continuously rotating output gear that is capable of delivering drive torque at a constant rotation to a micromechanism. The output gear can have gear teeth on its outer perimeter for directly contacting a micromechanism requiring mechanical power. The gear is retained by a retaining means which allows said gear to rotate freely. The microengine is microfabricated of polysilicon on one wafer using surface micromachining batch fabrication.

Characteristic analysis and simulation for polysilicon comb micro-accelerometer

NASA Astrophysics Data System (ADS)

Liu, Fengli; Hao, Yongping

2008-10-01

High force update rate is a key factor for achieving high performance haptic rendering, which imposes a stringent real time requirement upon the execution environment of the haptic system. This requirement confines the haptic system to simplified environment for reducing the computation cost of haptic rendering algorithms. In this paper, we present a novel "hyper-threading" architecture consisting of several threads for haptic rendering. The high force update rate is achieved with relatively large computation time interval for each haptic loop. The proposed method was testified and proved to be effective with experiments on virtual wall prototype haptic system via Delta Haptic Device.

Error analysis and prevention of cosmic ion-induced soft errors in static CMOS RAMs

NASA Astrophysics Data System (ADS)

Diehl, S. E.; Ochoa, A., Jr.; Dressendorfer, P. V.; Koga, P.; Kolasinski, W. A.

1982-12-01

Cosmic ray interactions with memory cells are known to cause temporary, random, bit errors in some designs. The sensitivity of polysilicon gate CMOS static RAM designs to logic upset by impinging ions has been studied using computer simulations and experimental heavy ion bombardment. Results of the simulations are confirmed by experimental upset cross-section data. Analytical models have been extended to determine and evaluate design modifications which reduce memory cell sensitivity to cosmic ions. A simple design modification, the addition of decoupling resistance in the feedback path, is shown to produce static RAMs immune to cosmic ray-induced bit errors.

Development of a CMOS-compatible PCR chip: comparison of design and system strategies

NASA Astrophysics Data System (ADS)

Erill, Ivan; Campoy, Susana; Rus, José; Fonseca, Luis; Ivorra, Antoni; Navarro, Zenón; Plaza, José A.; Aguiló, Jordi; Barbé, Jordi

2004-11-01

In the last decade research in chips for DNA amplification through the polymerase chain reaction (PCR) has been relatively abundant, but has taken very diverse approaches, leaving little common ground for a straightforward comparison of results. Here we report the development of a line of PCR chips that is fully compatible with complementary-metal-oxide-semiconductor (CMOS) technology and its revealing use as a general platform to test and compare a wide range of experimental parameters involved in PCR-chip design and operation. Peltier-heated and polysilicon thin-film driven PCR chips have been produced and directly compared in terms of efficiency, speed and power consumption, showing that thin-film systems run faster and more efficiently than Peltier-based ones, but yield inferior PCR products. Serpentine-like chamber designs have also been compared with standard rectangular designs and with the here reported rhomboidal chamber shape, showing that serpentine-like chambers do not have detrimental effects in PCR efficiency when using non-flow-through schemes, and that chamber design has a strong impact on sample insertion/extraction yields. With an accurate temperature control (±0.2 °C) we have optimized reaction kinetics to yield sound PCR amplifications of 25 µl mixtures in 20 min and with 24.4 s cycle times, confirming that a titrated amount of bovine albumin serum (BSA, 2.5 µg µl-1) is essential to counteract polymerase adsorption at chip walls. The reported use of a CMOS-compatible technological process paves the way for an easy adaption to foundry requirements and for a scalable integration of electro-optic detection and control circuitry.

Photovoltaic retinal prosthesis for restoring sight to the blind: implant design and fabrication

NASA Astrophysics Data System (ADS)

Wang, Lele; Mathieson, Keith; Kamins, Theodore I.; Loudin, James; Galambos, Ludwig; Harris, James S.; Palanker, Daniel

2012-03-01

We have designed and fabricated a silicon photodiode array for use as a subretinal prosthesis aimed at restoring sight to patients who lost photoreceptors due to retinal degeneration. The device operates in photovoltaic mode. Each pixel in the two-dimensional array independently converts pulsed infrared light into biphasic electric current to stimulate remaining retinal neurons without a wired power connection. To enhance the maximum voltage and charge injection levels, each pixel contains three photodiodes connected in series. An active and return electrode in each pixel ensure localized current flow and are sputter coated with iridium oxide to provide high charge injection. The fabrication process consists of eight mask layers and includes deep reactive ion etching, oxidation, and a polysilicon trench refill for in-pixel photodiode separation and isolation of adjacent pixels. Simulation of design parameters included TSUPREM4 computation of doping profiles for n+ and p+ doped regions and MATLAB computation of the anti-reflection coating layers thicknesses. The main process steps are illustrated in detail, and problems encountered are discussed. The IV characterization of the device shows that the dark reverse current is on the order of 10-100 pA-negligible compared to the stimulation current; the reverse breakdown voltage is higher than 20 V. The measured photo-responsivity per photodiode is about 0.33A/W at 880 nm.

Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications

NASA Astrophysics Data System (ADS)

Frewin, C. L.; Locke, C.; Wang, J.; Spagnol, P.; Saddow, S. E.

2009-08-01

The growth of highly oriented 3C-SiC directly on an oxide release layer, composed of a 20-nm-thick poly-Si seed layer and a 550-nm-thick thermally deposited oxide on a (1 1 1)Si substrate, was investigated as an alternative to using silicon-on-insulator (SOI) substrates for freestanding SiC films for MEMS applications. The resulting SiC film was characterized by X-ray diffraction (XRD) with the X-ray rocking curve of the (1 1 1) diffraction peak displaying a FWHM of 0.115° (414″), which was better than that for 3C-SiC films grown directly on (1 1 1)Si during the same deposition process. However, the XRD peak amplitude for the 3C-SiC film on the poly-Si seed layer was much less than for the (1 1 1)Si control substrate, due to slight in-plane misorientations in the film. Surprisingly, the film was solely composed of (1 1 1) 3C-SiC grains and possessed no 3C-SiC grains oriented along the <3 1 1> and <1 1 0> directions which were the original directions of the poly-Si seed layer. With this new process, MEMS structures such as cantilevers and membranes can be easily released leaving behind high-quality 3C-SiC structures.

A novel multi-actuation CMOS RF MEMS switch

NASA Astrophysics Data System (ADS)

Lee, Chiung-I.; Ko, Chih-Hsiang; Huang, Tsun-Che

2008-12-01

This paper demonstrates a capacitive shunt type RF MEMS switch, which is actuated by electro-thermal actuator and electrostatic actuator at the same time, and than latching the switching status by electrostatic force only. Since thermal actuators need relative low voltage compare to electrostatic actuators, and electrostatic force needs almost no power to maintain the switching status, the benefits of the mechanism are very low actuation voltage and low power consumption. Moreover, the RF MEMS switch has considered issues for integrated circuit compatible in design phase. So the switch is fabricated by a standard 0.35um 2P4M CMOS process and uses wet etching and dry etching technologies for postprocess. This compatible ability is important because the RF characteristics are not only related to the device itself. If a packaged RF switch and a packaged IC wired together, the parasitic capacitance will cause the problem for optimization. The structure of the switch consists of a set of CPW transmission lines and a suspended membrane. The CPW lines and the membrane are in metal layers of CMOS process. Besides, the electro-thermal actuators are designed by polysilicon layer of the CMOS process. So the RF switch is only CMOS process layers needed for both electro-thermal and electrostatic actuations in switch. The thermal actuator is composed of a three-dimensional membrane and two heaters. The membrane is a stacked step structure including two metal layers in CMOS process, and heat is generated by poly silicon resistors near the anchors of membrane. Measured results show that the actuation voltage of the switch is under 7V for electro-thermal added electrostatic actuation.

Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits

NASA Astrophysics Data System (ADS)

Sporea, R. A.; Trainor, M. J.; Young, N. D.; Shannon, J. M.; Silva, S. R. P.

2014-03-01

Ultra-large-scale integrated (ULSI) circuits have benefited from successive refinements in device architecture for enormous improvements in speed, power efficiency and areal density. In large-area electronics (LAE), however, the basic building-block, the thin-film field-effect transistor (TFT) has largely remained static. Now, a device concept with fundamentally different operation, the source-gated transistor (SGT) opens the possibility of unprecedented functionality in future low-cost LAE. With its simple structure and operational characteristics of low saturation voltage, stability under electrical stress and large intrinsic gain, the SGT is ideally suited for LAE analog applications. Here, we show using measurements on polysilicon devices that these characteristics lead to substantial improvements in gain, noise margin, power-delay product and overall circuit robustness in digital SGT-based designs. These findings have far-reaching consequences, as LAE will form the technological basis for a variety of future developments in the biomedical, civil engineering, remote sensing, artificial skin areas, as well as wearable and ubiquitous computing, or lightweight applications for space exploration.

Fabrication of directional sound sensor by silicon micromachining

NASA Astrophysics Data System (ADS)

Touse, Michael; Catterlin, Jeffrey; Sinibaldi, Jose; Karunasiri, Gamani

2009-03-01

A directional sound sensor based on the operational principle of the Ormia ochracea fly's hearing organism [1] was fabricated using micro-electromechanical system (MEMS) technology. The fly uses coupled bars hinged at the center to achieve directional sound sensing by monitoring the difference in their vibration amplitudes. The MEMS design employed in this work consisted of a 1x2 square millimeter polysilicon membrane hinged at the center and positioned about 1 micrometer above the substrate using a sacrificial silicon dioxide layer. Finite element analysis of the device shows two primary vibrational mode frequencies, one corresponding to a rocking mode which is highly dependent on angle of incidence, and the other to a bending motion which remains constant through all angles. Using a laser vibrometer to measure response, rocking and bending modes were observed at driving frequencies of 3.0 and 11.4 kHz, respectively, and angular dependence was in close agreement with modeling. [1] R.N. Miles, R. Robert, and R. R. Hoy, ``Mechanically coupled ears for directional hearing in the parasitoid fly Ormia ochracea,'' J. Acoust. Soc. Am., 98 (6), Dec. 1995

Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits

PubMed Central

Sporea, R. A.; Trainor, M. J.; Young, N. D.; Shannon, J. M.; Silva, S. R. P.

2014-01-01

Ultra-large-scale integrated (ULSI) circuits have benefited from successive refinements in device architecture for enormous improvements in speed, power efficiency and areal density. In large-area electronics (LAE), however, the basic building-block, the thin-film field-effect transistor (TFT) has largely remained static. Now, a device concept with fundamentally different operation, the source-gated transistor (SGT) opens the possibility of unprecedented functionality in future low-cost LAE. With its simple structure and operational characteristics of low saturation voltage, stability under electrical stress and large intrinsic gain, the SGT is ideally suited for LAE analog applications. Here, we show using measurements on polysilicon devices that these characteristics lead to substantial improvements in gain, noise margin, power-delay product and overall circuit robustness in digital SGT-based designs. These findings have far-reaching consequences, as LAE will form the technological basis for a variety of future developments in the biomedical, civil engineering, remote sensing, artificial skin areas, as well as wearable and ubiquitous computing, or lightweight applications for space exploration. PMID:24599023

Externally resonated linear microvibromotor for microassembly

NASA Astrophysics Data System (ADS)

Saitou, Kazuhiro; Wou, Soungjin J.

1998-10-01

A new design of a linear micro vibromotor for on-substrate fine positioning of micro-scale components is presented where a micro linear slider is actuated by vibratory impacts exerted by micro cantilever impacters. These micro cantilever impacters are selectively resonated by shaking the entire substrate with a piezoelectric vibrator, requiring no need for built-in driving mechanisms such as electrostatic comb actuators as reported previously. This selective resonance of the micro cantilever impacters via an external vibration energy field provides with a very simple means of controlling forward and backward motion of the micro linear slider, facilitating assembly and disassembly of a micro component on a substrate. The double-V beam suspension design is employed in the micro cantilever impacters for larger displacement in the lateral direction while achieving higher stiffness in the transversal direction. An analytical model of the device is derived in order to obtain, through the Simulated Annealing algorithm, an optimal design which maximizes translation speed of the linear slider at desired external input frequencies. Prototypes of the externally-resonated linear micro vibromotor are fabricated using the three-layer polysilicon surface micro machining process provided by the MCNC MUMPS service.

100-nm gate lithography for double-gate transistors

NASA Astrophysics Data System (ADS)

Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.

2001-09-01

The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

NSC 800, 8-bit CMOS microprocessor

NASA Technical Reports Server (NTRS)

Suszko, S. F.

1984-01-01

The NSC 800 is an 8-bit CMOS microprocessor manufactured by National Semiconductor Corp., Santa Clara, California. The 8-bit microprocessor chip with 40-pad pin-terminals has eight address buffers (A8-A15), eight data address -- I/O buffers (AD(sub 0)-AD(sub 7)), six interrupt controls and sixteen timing controls with a chip clock generator and an 8-bit dynamic RAM refresh circuit. The 22 internal registers have the capability of addressing 64K bytes of memory and 256 I/O devices. The chip is fabricated on N-type (100) silicon using self-aligned polysilicon gates and local oxidation process technology. The chip interconnect consists of four levels: Aluminum, Polysi 2, Polysi 1, and P(+) and N(+) diffusions. The four levels, except for contact interface, are isolated by interlevel oxide. The chip is packaged in a 40-pin dual-in-line (DIP), side brazed, hermetically sealed, ceramic package with a metal lid. The operating voltage for the device is 5 V. It is available in three operating temperature ranges: 0 to +70 C, -40 to +85 C, and -55 to +125 C. Two devices were submitted for product evaluation by F. Stott, MTS, JPL Microprocessor Specialist. The devices were pencil-marked and photographed for identification.

Anticipating and controlling mask costs within EDA physical design

NASA Astrophysics Data System (ADS)

Rieger, Michael L.; Mayhew, Jeffrey P.; Melvin, Lawrence S.; Lugg, Robert M.; Beale, Daniel F.

2003-08-01

For low k1 lithography, more aggressive OPC is being applied to critical layers, and the number of mask layers with OPC treatments is growing rapidly. The 130 nm, process node required, on average, 8 layers containing rules- or model-based OPC. The 90 nm node will have 16 OPC layers, of which 14 layers contain aggressive model-based OPC. This escalation of mask pattern complexity, coupled with the predominant use of vector-scan e-beam (VSB) mask writers contributes to the rising costs of advanced mask sets. Writing times for OPC layouts are several times longer than for traditional layouts, making mask exposure the single largest cost component for OPC masks. Lower mask yields, another key factor in higher mask costs, is also aggravated by OPC. Historical mask set costs are plotted below. The initial cost of a 90 nm-node mask set will exceed one million dollars. The relative impact of mask cost on chip depends on how many total wafers are printed with each mask set. For many foundry chips, where unit production is often well below 1000 wafers, mask costs are larger than wafer processing costs. Further increases in NRE may begin to discourage these suppliers' adoption to 90 nm and smaller nodes. In this paper we will outline several alternatives for reducing mask costs by strategically leveraging dimensional margins. Dimensional specifications for a particular masking layer usually are applied uniformly to all features on that layer. As a practical matter, accuracy requirements on different features in the design may vary widely. Take a polysilicon layer, for example: global tolerance specifications for that layer are driven by the transistor-gate requirements; but these parameters over-specify interconnect feature requirements. By identifying features where dimensional accuracy requirements can be reduced, additional margin can be leveraged to reduce OPC complexity. Mask writing time on VSB tools will drop in nearly direct proportion to reduce shot count. By inspecting masks with reference to feature-dependent margins, instead of uniform specifications, mask yield can be effectively increased further reducing delivered mask expense.

Advanced investigation of two-phase charge-coupled devices

NASA Technical Reports Server (NTRS)

Kosonocky, W. F.; Carnes, J. E.

1973-01-01

The performance of experimental two phase, charge-coupled shift registers constructed using polysilicon gates overlapped by aluminum gates was studied. Shift registers with 64, 128, and 500 stages were built and operated. Devices were operated at the maximum clock frequency of 20 MHz. Loss per transfer of less than .0001 was demonstrated for fat zero operation. The effect upon transfer efficiency of various structural and materials parameters was investigated including substrate orientation, resistivity, and conductivity type; channel width and channel length; and method of channel confinement. Operation of the devices with and without fat zero was studied as well as operation in the complete charge transfer mode and the bias charge, or bucket brigade mode.

3-D Observation of dopant distribution at NAND flash memory floating gate using Atom probe tomography

NASA Astrophysics Data System (ADS)

Lee, Ji-hyun; Chae, Byeong-Kyu; Kim, Joong-Jeong; Lee, Sun Young; Park, Chan Gyung

2015-01-01

Dopant control becomes more difficult and critical as silicon devices become smaller. We observed the dopant distribution in a thermally annealed polysilicon gate using Transmission Electron Microscopy (TEM) and Atom probe tomography (APT). Phosphorus was doped at the silicon-nitride-diffusion-barrier-layer-covered polycrystalline silicon gate. Carbon also incorporated at the gate for the enhancement of operation uniformity. The impurity distribution was observed using atom probe tomography. The carbon atoms had segregated at grain boundaries and suppressed silicon grain growth. Phosphorus atoms, on the other hand, tended to pile-up at the interface. A 1-nm-thick diffusion barrier effectively blocked P atom out-diffusion. [Figure not available: see fulltext.

Tensile-stressed microelectromechanical apparatus and microelectromechanical relay formed therefrom

DOEpatents

Fleming, James G [Albuquerque, NM

2008-03-04

A microelectromechanical (MEM) apparatus is disclosed which includes a shuttle suspended above a substrate by two or more sets of tensile-stressed beams which are operatively connected to the shuttle and which can comprise tungsten or a silicon nitride/polysilicon composite structure. Initially, the tensile stress in each set of beams is balanced. However, the tensile stress can be unbalanced by heating one or more of the sets of beams; and this can be used to move the shuttle over a distance of up to several tens of microns. The MEM apparatus can be used to form a MEM relay having relatively high contact and opening forces, and with or without a latching capability.

Silicon nitride films deposited with an electron beam created plasma

NASA Technical Reports Server (NTRS)

Bishop, D. C.; Emery, K. A.; Rocca, J. J.; Thompson, L. R.; Zamani, H.; Collins, G. J.

1984-01-01

The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

Microelectromechanical gyroscope

DOEpatents

Garcia, Ernest J.

1999-01-01

A gyroscope powered by an engine, all fabricated on a common substrate in the form of an integrated circuit. Preferably, both the gyroscope and the engine are fabricated in the micrometer domain, although in some embodiments of the present invention, the gyroscope can be fabricated in the millimeter domain. The engine disclosed herein provides torque to the gyroscope rotor for continuous rotation at varying speeds and direction. The present invention is preferably fabricated of polysilicon or other suitable materials on a single wafer using surface micromachining batch fabrication techniques or millimachining techniques that are well known in the art. Fabrication of the present invention is preferably accomplished without the need for assembly of multiple wafers which require alignment and bonding, and without piece-part assembly.

Micro/nano moire methods

NASA Astrophysics Data System (ADS)

Asundi, Anand K.; Shang, Haixia; Xie, Huimin; Li, Biao

2003-10-01

Two novel micro/nano moire method, SEM scanning moiré and AFM scanning moire techniques are discussed in this paper. The principle and applications of two scanning moire methods are described in detail. The residual deformation in a polysilicon MEMS cantilever structure with a 5000 lines/mm grating after removing the SiO2 sacrificial layer is accurately measured by SEM scanning moire method. While AFM scanning moire method is used to detect thermal deformation of electronic package components, and formation of nano-moire on a freshly cleaved mica crystal. Experimental results demonstrate the feasibility of these two moire methods, and also show they are effective methods to measure the deformation from micron to nano-scales.

Revolution Now: The Future Arrives for Four Clean Energy Technologies

DOE R&D Accomplishments Database

Tillemann, Levi; Beck, Fredric; Brodrick, James; Brown, Austin; Feldman, David; Nguyen, Tien; Ward, Jacob

2013-09-17

For decades, America has anticipated the transformational impact of clean energy technologies. But even as costs fell and technology matured, a clean energy revolution always seemed just out of reach. Critics often said a clean energy future would "always be five years away." This report focuses on four technology revolutions that are here today. In the last five years they have achieved dramatic reductions in cost and this has been accompanied by a surge in consumer, industrial and commercial deployment. Although these four technologies still represent a small percentage of their total market, they are growing rapidly. The four key technologies this report focuses on are: onshore wind power, polysilicon photovoltaic modules, LED lighting, and electric vehicles.

Micromachined optical microphone structures with low thermal-mechanical noise levels.

PubMed

Hall, Neal A; Okandan, Murat; Littrell, Robert; Bicen, Baris; Degertekin, F Levent

2007-10-01

Micromachined microphones with diffraction-based optical displacement detection have been introduced previously [Hall et al., J. Acoust. Soc. Am. 118, 3000-3009 (2005)]. The approach has the advantage of providing high displacement detection resolution of the microphone diaphragm independent of device size and capacitance-creating an unconstrained design space for the mechanical structure itself. Micromachined microphone structures with 1.5-mm-diam polysilicon diaphragms and monolithically integrated diffraction grating electrodes are presented in this work with backplate architectures that deviate substantially from traditional perforated plate designs. These structures have been designed for broadband frequency response and low thermal mechanical noise levels. Rigorous experimental characterization indicates a diaphragm displacement detection resolution of 20 fm radicalHz and a thermal mechanical induced diaphragm displacement noise density of 60 fm radicalHz, corresponding to an A-weighted sound pressure level detection limit of 24 dB(A) for these structures. Measured thermal mechanical displacement noise spectra are in excellent agreement with simulations based on system parameters derived from dynamic frequency response characterization measurements, which show a diaphragm resonance limited bandwidth of approximately 20 kHz. These designs are substantial improvements over initial prototypes presented previously. The high performance-to-size ratio achievable with this technology is expected to have an impact on a variety of instrumentation and hearing applications.

Tensile testing of thin-film microstructures

NASA Astrophysics Data System (ADS)

Greek, Staffan; Johansson, Stefan A. I.

1997-09-01

The mechanical properties of thin film microstructures depend on size and shape and on the film manufacturing process. Hence, the test structures that are used to measure mechanical properties should have dimensions of the same order of magnitude as an application structure. The microstructures are easily monitored in a scanning electron microscope (SEM), but to be handled and tested in situ a micromanipulator was developed. The parts of the micromanipulator essential to the tests are two independently moveable tables driven by electric motors. The test structures and a testing unit are mounted on the tables. A testing unit was designed to measure force and displacement with high resolution. The testing unit consists of an arm actuated by a piezoelectric element and equipped with a probe. An optical encoder measures the movement of the arm, while strain gauges measure the force in the arm. Test structures consist typically of a released beam fixed at one end with a ring at the other. The micromanipulator is used to position the probe of the testing unit in the ring. The testing unit then executed a tensile test of the beam. Test structures of polysilicon films produced under various process conditions were used to verify the possibility of measuring Young's modulus with an accuracy of +/- 5 percent, as well as fracture strength.Young's modulus is calculated using the difference in elongation for different beam lengths. The fracture strength of the beams was evaluated with Weibull statistics.

A novel CMOS transducer for giant magnetoresistance sensors.

PubMed

Luong, Van Su; Lu, Chih-Cheng; Yang, Jing-Wen; Jeng, Jen-Tzong

2017-02-01

In this work, an ASIC (application specific integrated circuits) transducer circuit for field modulated giant magnetoresistance (GMR) sensors was designed and fabricated using a 0.18-μm CMOS process. The transducer circuits consist of a frequency divider, a digital phase shifter, an instrument amplifier, and an analog mixer. These comprise a mix of analog and digital circuit techniques. The compact chip size of 1.5 mm × 1.5 mm for both analog and digital parts was achieved using the TSMC18 1P6M (1-polysilicon 6-metal) process design kit, and the characteristics of the system were simulated using an HSpice simulator. The output of the transducer circuit is the result of the first harmonic detection, which resolves the modulated field using a phase sensitive detection (PSD) technique and is proportional to the measured magnetic field. When the dual-bridge GMR sensor is driven by the transducer circuit with a current of 10 mA at 10 kHz, the observed sensitivity of the field sensor is 10.2 mV/V/Oe and the nonlinearity error was 3% in the linear range of ±1 Oe. The performance of the system was also verified by rotating the sensor system horizontally in earth's magnetic field and recording the sinusoidal output with respect to the azimuth angle, which exhibits an error of less than ±0.04 Oe. These results prove that the ASIC transducer is suitable for driving the AC field modulated GMR sensors applied to geomagnetic measurement.

Resonant-type MEMS transducers excited by two acoustic emission simulation techniques

NASA Astrophysics Data System (ADS)

Ozevin, Didem; Greve, David W.; Oppenheim, Irving J.; Pessiki, Stephen

2004-07-01

Acoustic emission testing is a passive nondestructive testing technique used to identify the onset and characteristics of damage through the detection and analysis of transient stress waves. Successful detection and implementation of acoustic emission requires good coupling, high transducer sensitivity and ability to discriminate noise from real signals. We report here detection of simulated acoustic emission signals using a MEMS chip fabricated in the multi-user polysilicon surface micromachining (MUMPs) process. The chip includes 18 different transducers with 10 different resonant frequencies in the range of 100 kHz to 1 MHz. It was excited by two different source simulation techniques; pencil lead break and impact loading. The former simulation was accomplished by breaking 0.5 mm lead on the ceramic package. Four transducer outputs were collected simultaneously using a multi-channel oscilloscope. The impact loading was repeated for five different diameter ball bearings. Traditional acoustic emission waveform analysis methods were applied to both data sets to illustrate the identification of different source mechanisms. In addition, a sliding window Fourier transform was performed to differentiate frequencies in time-frequency-amplitude domain. The arrival and energy contents of each resonant frequency were investigated in time-magnitude plots. The advantages of the simultaneous excitation of resonant transducers on one chip are discussed and compared with broadband acoustic emission transducers.

Vertical Diaphragm Electrostatic Actuator for a High Density Ink Jet Printer Head

NASA Astrophysics Data System (ADS)

Norimatsu, Takayuki; Tanaka, Shuji; Esashi, Masayoshi

This paper describes the design, fabrication process and preliminary evaluation of an electrostatic ink jet printer head with vertical diaphragms in deep trenches. By adopting the novel structure where an ink cavity is surrounded by the vertical diaphragm, the footprint of each unit (40 μm × 500 μm) becomes approximately one fifth as small as that of a conventional one. Such small footprint is advantageous in cost, resolution and printing speed. To make the vertical diaphragms, a 0.5 μm thick sacrificial thermally-oxidized layer and a 4.5 μm thick poly-silicon layer are sequentially formed in deep-reactive-ion-etched trenches, and then the sacrificial layer is etched away by fluoric acid. The nozzles are fabricated on a Pyrex glass substrate by femtosecond laser ablation, and the nozzle outside is covered with a water repellant Au/Pt/Ti layer. Impedance measurement found that the electrostatic gaps were in contact or closely approaching. This could be because the diaphragms buckled by compressive stress induced in low pressure chemical vapor deposition (LPCVD). Ink ejection was tried using commercially-available blue ink, but failed. The nozzles were covered with the ink, because the water repellant finish of the nozzle outside was not good.

Oxide driven strength evolution of silicon surfaces

DOE PAGES

Grutzik, Scott J.; Milosevic, Erik; Boyce, Brad L.; ...

2015-11-19

Previous experiments have shown a link between oxidation and strength changes in single crystal silicon nanostructures but provided no clues as to the mechanisms leading to this relationship. Using atomic force microscope-based fracture strength experiments, molecular dynamics modeling, and measurement of oxide development with angle resolved x-ray spectroscopy we study the evolution of strength of silicon (111) surfaces as they oxidize and with fully developed oxide layers. We find that strength drops with partial oxidation but recovers when a fully developed oxide is formed and that surfaces intentionally oxidized from the start maintain their high initial strengths. MD simulations showmore » that strength decreases with the height of atomic layer steps on the surface. These results are corroborated by a completely separate line of testing using micro-scale, polysilicon devices, and the slack chain method in which strength recovers over a long period of exposure to the atmosphere. Lastly, combining our results with insights from prior experiments we conclude that previously described strength decrease is a result of oxidation induced roughening of an initially flat silicon (1 1 1) surface and that this effect is transient, a result consistent with the observation that surfaces flatten upon full oxidation.« less

X-ray tests of a microchannel plate detector and amorphous silicon pixel array readout for neutron radiography

NASA Astrophysics Data System (ADS)

Ambrosi, R. M.; Street, R.; Feller, B.; Fraser, G. W.; Watterson, J. I. W.; Lanza, R. C.; Dowson, J.; Ross, D.; Martindale, A.; Abbey, A. F.; Vernon, D.

2007-03-01

High-performance large area imaging detectors for fast neutrons in the 5-14 MeV energy range do not exist at present. The aim of this project is to combine microchannel plates or MCPs (or similar electron multiplication structures) traditionally used in image intensifiers and X-ray detectors with amorphous silicon (a-Si) pixel arrays to produce a composite converter and intensifier position sensitive imaging system. This detector will provide an order of magnitude improvement in image resolution when compared with current millimetre resolution limits obtained using phosphor or scintillator-based hydrogen rich converters. In this study we present the results of the initial experimental evaluation of the prototype system. This study was carried out using a medical X-ray source for the proof of concept tests, the next phase will involve neutron imaging tests. The hybrid detector described in this study is a unique development and paves the way for large area position sensitive detectors consisting of MCP or microsphere plate detectors and a-Si or polysilicon pixel arrays. Applications include neutron and X-ray imaging for terrestrial applications. The technology could be extended to space instrumentation for X-ray astronomy.

Quantum Mechanical Study of Nanoscale MOSFET

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

2001-01-01

The steady state characteristics of MOSFETS that are of practical Interest are the drive current, off-current, dope of drain current versus drain voltage, and threshold voltage. In this section, we show that quantum mechanical simulations yield significantly different results from drift-diffusion based methods. These differences arise because of the following quantum mechanical features: (I) polysilicon gate depletion in a manner opposite to the classical case (II) dependence of the resonant levels in the channel on the gate voltage, (III) tunneling of charge across the gate oxide and from source to drain, (IV) quasi-ballistic flow of electrons. Conclusions dI/dV versus V does not increase in a manner commensurate with the increase in number of subbands. - The increase in dI/dV with bias is much smaller then the increase in the number of subbands - a consequence of bragg reflection. Our calculations show an increase in transmission with length of contact, as seen in experiments. It is desirable for molecular electronics applications to have a small contact area, yet large coupling. In this case, the circumferential dependence of the nanotube wave function dictates: - Transmission in armchair tubes saturates around unity - Transmission in zigzag tubes saturates at two.

Development of a Self Aligned CMOS Process for Flash Lamp Annealed Polycrystalline Silicon TFTs

NASA Astrophysics Data System (ADS)

Bischoff, Paul

The emerging active matrix liquid crystal (AMLCD) display market requires a high performing semiconductor material to meet rising standards of operation. Currently amorphous silicon (a-Si) dominates the market but it does not have the required mobility for it to be used in AMLCD manufacturing. Other materials have been developed including crystallizing a-Si into poly-silicon. A new approach to crystallization through the use of flash lamp annealing (FLA) decreases manufacturing time and greatly improves carrier mobility. Previous work on FLA silicon for the use in CMOS transistors revealed significant lateral dopant diffusion into the channel greatly increasing the minimum channel length required for a working device. This was further confounded by the gate overlap due to misalignment during lithography patterning steps. Through the use of furnace dopant activation instead of FLA dopant activation and a self aligned gate the minimum size transistor can be greatly reduced. A new lithography mask and process flow were developed for the furnace annealing and self aligned gate. Fabrication of the self aligned devices resulted in oxidation of the Molybdenum self aligned gate. Further development is needed to successfully manufacture these devices. Non-self aligned transistors were made simultaneously with self aligned devices and used the furnace activation. These devices showed an increase in sheet resistance from 250 O to 800 O and lower mobility from 380 to 40.2 V/cm2s. The lower mobility can be contributed to an increase in implanted trap density indicating furnace annealing is an inferior activation method over FLA. The minimum transistor size however was reduced from 20 to 5 mum. With improvements in the self aligned process high performing small devices can be manufactured.

Sub-half-micron contact window design with 3D photolithography simulator

NASA Astrophysics Data System (ADS)

Brainerd, Steve K.; Bernard, Douglas A.; Rey, Juan C.; Li, Jiangwei; Granik, Yuri; Boksha, Victor V.

1997-07-01

In state of the art IC design and manufacturing certain lithography layers have unique requirements. Latitudes and tolerances that apply to contacts and polysilicon gates are tight for such critical layers. Industry experts are discussing the most cost effective ways to use feature- oriented equipment and materials already developed for these layers. Such requirements introduce new dimensions into the traditionally challenging task for the photolithography engineer when considering various combinations of multiple factors to optimize and control the process. In addition, he/she faces a rapidly increasing cost of experiments, limited time and scarce access to equipment to conduct them. All the reasons presented above support simulation as an ideal method to satisfy these demands. However lithography engineers may be easily dissatisfied with a simulation tool when discovering disagreement between the simulation and experimental data. The problem is that several parameters used in photolithography simulation are very process specific. Calibration, i.e. matching experimental and simulation data using a specific set of procedures allows one to effectively use the simulation tool. We present results of a simulation based approach to optimize photolithography processes for sub-0.5 micron contact windows. Our approach consists of: (1) 3D simulation to explore different lithographic options, (2) calibration to a range of process conditions with extensive use of specifically developed optimization techniques. The choice of a 3D simulator is essential because of 3D nature of the problem of contact window design. We use DEPICT 4.1. This program performs fast aerial image simulation as presented before. For 3D exposure the program uses an extension to three-dimensions of the high numerical aperture model combined with Fast Fourier Transforms for maximum performance and accuracy. We use Kim (U.C. Berkeley) model and the fast marching Level Set method respectively for the calculation of resist development rates and resist surface movement during development process. Calibration efforts were aimed at matching experimental results on contact windows obtained after exposure of a binary mask. Additionally, simulation was applied to conduct quantitative analysis of PSM design capabilities, optical proximity correction, and stepper parameter optimization. Extensive experiments covered exposure (ASML 5500/100D stepper), pre- and post-exposure bake and development (2.38% TMAH, puddle process) of JSR IX725D2G and TOK iP3500 photoresists films on 200 mm test wafers. `Aquatar' was used as top antireflective coating, SEM pictures of developed patterns were analyzed and compared with simulation results for different values of defocus, exposure energies, numerical aperture and partial coherence.

Etude de la texture des rubans EPR de silicium polycristallin photovoltaïque

NASA Astrophysics Data System (ADS)

Chibani, A.; Gauthier, R.; Pinard, P.; Andonov, P.

1991-09-01

EPR polysilicon ribbons are obtained from a 5N-6N purity grade silicon powder melting followed by a recrystallization step. Being assigned to the photocell manufacture, we study the texture by X-ray diffraction method to reveal the majority of the crystal orientations and prove the eventual existence of specific orientations adapted to the best photovoltaic conversion efficiencies such as (100), (110) or (111). Moreover, we tested the possibility to induce the (111) orientation with a monocrystalline seed having this orientation. It appears that the crystal growth is essentially anisotropic and that only the orientation of the grains with their (331) planes parallel to the ribbon surface may be considered as dominant after the recrystallization step; finally, the (111) starting seed has an effect only at the recrystallization onset.

Electrostatic Microactuators for Precise Positioning of Neural Microelectrodes

PubMed Central

Muthuswamy, Jit; Okandan, Murat; Jain, Tilak; Gilletti, Aaron

2006-01-01

Microelectrode arrays used for monitoring single and multineuronal action potentials often fail to record from the same population of neurons over a period of time likely due to micromotion of neurons away from the microelectrode, gliosis around the recording site and also brain movement due to behavior. We report here novel electrostatic microactuated microelectrodes that will enable precise repositioning of the microelectrodes within the brain tissue. Electrostatic comb-drive microactuators and associated microelectrodes are fabricated using the SUMMiT V™ (Sandia's Ultraplanar Multilevel MEMS Technology) process, a five-layer polysilicon micromachining technology of the Sandia National labs, NM. The microfabricated microactuators enable precise bidirectional positioning of the microelectrodes in the brain with accuracy in the order of 1 μm. The microactuators allow for a linear translation of the microelectrodes of up to 5 mm in either direction making it suitable for positioning microelectrodes in deep structures of a rodent brain. The overall translation was reduced to approximately 2 mm after insulation of the microelectrodes with epoxy for monitoring multiunit activity. The microactuators are capable of driving the microelectrodes in the brain tissue with forces in the order of several micro-Newtons. Single unit recordings were obtained from the somatosensory cortex of adult rats in acute experiments demonstrating the feasibility of this technology. Further optimization of the insulation, packaging and interconnect issues will be necessary before this technology can be validated in long-term experiments. PMID:16235660

Development of a MEMS device for acoustic emission testing

NASA Astrophysics Data System (ADS)

Ozevin, Didem; Pessiki, Stephen P.; Jain, Akash; Greve, David W.; Oppenheim, Irving J.

2003-08-01

Acoustic emission testing is an important technology for evaluating structural materials, and especially for detecting damage in structural members. Significant new capabilities may be gained by developing MEMS transducers for acoustic emission testing, including permanent bonding or embedment for superior coupling, greater density of transducer placement, and a bundle of transducers on each device tuned to different frequencies. Additional advantages include capabilities for maintenance of signal histories and coordination between multiple transducers. We designed a MEMS device for acoustic emission testing that features two different mechanical types, a hexagonal plate design and a spring-mass design, with multiple detectors of each type at ten different frequencies in the range of 100 kHz to 1 MHz. The devices were fabricated in the multi-user polysilicon surface micromachining (MUMPs) process and we have conducted electrical characterization experiments and initial experiments on acoustic emission detection. We first report on C(V) measurements and perform a comparison between predicted (design) and measured response. We next report on admittance measurements conducted at pressures varying from vacuum to atmospheric, identifying the resonant frequencies and again providing a comparison with predicted performance. We then describe initial calibration experiments that compare the performance of the detectors to other acoustic emission transducers, and we discuss the overall performance of the device as a sensor suite, as contrasted to the single-channel performance of most commercial transducers.

Optical network of silicon micromachined sensors

NASA Astrophysics Data System (ADS)

Wilson, Mark L.; Burns, David W.; Zook, J. David

1996-03-01

The Honeywell Technology Center, in collaboration with the University of Wisconsin and the Mobil Corporation, and under funding from this ARPA sponsored program, are developing a new type of `hybrid' micromachined silicon/fiber optic sensor that utilizes the best attributes of each technology. Fiber optics provide a noise free method to read out the sensor without electrical power required at the measurement point. Micromachined silicon sensor techniques provide a method to design many different types of sensors such as temperature, pressure, acceleration, or magnetic field strength and report the sensor data using FDM methods. Our polysilicon resonant microbeam structures have a built in Fabry-Perot interferometer that offers significant advantages over other configurations described in the literature. Because the interferometer is an integral part of the structure, the placement of the fiber becomes non- critical, and packaging issues become considerably simpler. The interferometer spacing are determined by the thin-film fabrication processes and therefore can be extremely well controlled. The main advantage, however, is the integral vacuum cavity that ensures high Q values. Testing results have demonstrated relaxed alignment tolerances in packaging these devices, with an excellent Signal to Noise Ratio. Networks of 16 or more sensors are currently being developed. STORM (Strain Transduction by Optomechanical Resonant Microbeams) sensors can also provide functionality and self calibration information which can be used to improve the overall system reliability. Details of the sensor and network design, as well as test results, are presented.

Modeling of stress-induced curvature in surface-micromachined devices

NASA Astrophysics Data System (ADS)

Cowan, William D.; Bright, Victor M.; Elvin, Alex A.; Koester, David A.

1997-09-01

This paper compares measured to modeled stress-induced curvature of simple piston micromirrors. Two similar flexure-beam micromirror designs were fabricate using the 11th DARPA-supported multi-user MEMS processes (MUMPs) run. The test devices vary only in the MUMPs layers used for fabrication. In one case the mirror plate is the 1.5 micrometers thick Poly2 layer. The other mirror design employs stacked Poly1 and Poly2 layers for a total thickness of 3.5 micrometers . Both mirror structures are covered with the standard MUMPs metallization of approximately 200 angstrom of chromium and 0.5 micrometers of gold. Curvature of these devices was measured to within +/- 5 nm with a computer controlled microscope laser interferometer system. As intended, the increased thickness of the stacked polysilicon layers reduces the mirror curvature by a factor of 4. The two micromirror designs were modeled using IntelliCAD, a commercial CAD system for MEMS. The basis of analysis was the finite element method. Simulated results using MUMPs 11 film parameters showed qualitative agreement with measured data, but obvious quantitative differences. Subsequent remeasurement of the metal stress and use of the new value significantly improved model agreement with the measured data. The paper explores the effect of several film parameters on the modeled structures. Implications for MEMS film metrology, and test structures are considered.

Electrical Characterization of Semiconductor and Dielectric Materials with a Non-Damaging FastGateTM Probe

NASA Astrophysics Data System (ADS)

Robert, Hillard; William, Howland; Bryan, Snyder

2002-03-01

Determination of the electrical properties of semiconductor materials and dielectrics is highly desirable since these correlate best to final device performance. The properties of SiO2 and high k dielectrics such as Equivalent Oxide Thickness(EOT), Interface Trap Density(Dit), Oxide Effective Charge(Neff), Flatband Voltage Hysteresis(Delta Vfb), Threshold Voltage(VT) and, bulk properties such as carrier density profile and channel dose are all important parameters that require monitoring during front end processing. Conventional methods for determining these parameters involve the manufacturing of polysilicon or metal gate MOS capacitors and subsequent measurements of capacitance-voltage(CV) and/or current-voltage(IV). These conventional techniques are time consuming and can introduce changes to the materials being monitored. Also, equivalent circuit effects resulting from excessive leakage current, series resistance and stray inductance can introduce large errors in the measured results. In this paper, a new method is discussed that provides rapid determination of these critical parameters and is robust against equivalent circuit errors. This technique uses a small diameter(30 micron), elastically deformed probe to form a gate for MOSCAP CV and IV and can be used to measure either monitor wafers or test areas within scribe lines on product wafers. It allows for measurements of dielectrics thinner than 10 Angstroms. A detailed description and applications such as high k dielectrics, will be presented.

Sensitive electromechanical sensors using viscoelastic graphene-polymer nanocomposites.

PubMed

Boland, Conor S; Khan, Umar; Ryan, Gavin; Barwich, Sebastian; Charifou, Romina; Harvey, Andrew; Backes, Claudia; Li, Zheling; Ferreira, Mauro S; Möbius, Matthias E; Young, Robert J; Coleman, Jonathan N

2016-12-09

Despite its widespread use in nanocomposites, the effect of embedding graphene in highly viscoelastic polymer matrices is not well understood. We added graphene to a lightly cross-linked polysilicone, often encountered as Silly Putty, changing its electromechanical properties substantially. The resulting nanocomposites display unusual electromechanical behavior, such as postdeformation temporal relaxation of electrical resistance and nonmonotonic changes in resistivity with strain. These phenomena are associated with the mobility of the nanosheets in the low-viscosity polymer matrix. By considering both the connectivity and mobility of the nanosheets, we developed a quantitative model that completely describes the electromechanical properties. These nanocomposites are sensitive electromechanical sensors with gauge factors >500 that can measure pulse, blood pressure, and even the impact associated with the footsteps of a small spider. Copyright © 2016, American Association for the Advancement of Science.

Instability in radiatively melted silicon films

NASA Astrophysics Data System (ADS)

Jackson, K. A.; Kurtze, Douglas A.

1985-04-01

Bosch and Lemons [Phys. Rev. Letters 47 (1981) 1151] were first to report that on heating of silicon with a laser, the heated area can break up into small regions of solid and liquid. Thus phenomenon produces undesirable surface roughness on silicon which has been melted using irradiation from a laser or heat lamps. It is due to the higher reflectivity of liquid silicon so that radiative heating produces small regions of superheated solid in contact with small regions of supercooled liquid. In this paper, the instabilities resulting from this unusual thermal situation have been analyzed. It is shown that a stable pattern can develop provided that the spacing between the solid and liquid is small enough. For a 1/2 μm thick layer of polysilicon on silica, the calculated stable spacing is less than about 10 μm, in accord with experiment.

Surface--micromachined rotatable member having a low-contact-area hub

DOEpatents

Rodgers, M. Steven; Sniegowski, Jeffry J.

2002-01-01

A surface-micromachined rotatable member formed on a substrate and a method for manufacturing thereof are disclosed. The surface-micromachined rotatable member, which can be a gear or a rotary stage, has a central hub, and an annulus connected to the central hub by an overarching bridge. The hub includes a stationary axle support attached to the substrate and surrounding an axle. The axle is retained within the axle support with an air-gap spacing therebetween of generally 0.3 .mu.m or less. The rotatable member can be formed by alternately depositing and patterning layers of a semiconductor (e.g. polysilicon or a silicon-germanium alloy) and a sacrificial material and then removing the sacrificial material, at least in part. The present invention has applications for forming micromechanical or microelectromechanical devices requiring lower actuation forces, and providing improved reliability.

Surface-micromachined rotatable member having a low-contact-area hub

DOEpatents

Rodgers, M. Steven; Sniegowski, Jeffry J.; Krygowski, Thomas W.

2003-11-18

A surface-micromachined rotatable member formed on a substrate and a method for manufacturing thereof are disclosed. The surface-micromachined rotatable member, which can be a gear or a rotary stage, has a central hub, and an annulus connected to the central hub by an overarching bridge. The hub includes a stationary axle support attached to the substrate and surrounding an axle. The axle is retained within the axle support with an air-gap spacing therebetween of generally 0.3 .mu.m or less. The rotatable member can be formed by alternately depositing and patterning layers of a semiconductor (e.g. polysilicon or a silicon-germanium alloy) and a sacrificial material and then removing the sacrificial material, at least in part. The present invention has applications for forming micromechanical or microelectromechanical devices requiring lower actuation forces, and providing improved reliability.

MEMS sensing and control: an aerospace perspective

NASA Astrophysics Data System (ADS)

Schoess, Jeffrey N.; Arch, David K.; Yang, Wei; Cabuz, Cleopatra; Hocker, Ben; Johnson, Burgess R.; Wilson, Mark L.

2000-06-01

Future advanced fixed- and rotary-wing aircraft, launch vehicles, and spacecraft will incorporate smart microsensors to monitor flight integrity and provide flight control inputs. This paper provides an overview of Honeywell's MEMS technologies for aerospace applications of sensing and control. A unique second-generation polysilicon resonant microbeam sensor design is described. It incorporates a micron-level vacuum-encapsulated microbeam to optically sense aerodynamic parameters and to optically excite the sensor pick off: optically excited self-resonant microbeams form the basis for a new class of versatile, high- performance, low-cost MEMS sensors that uniquely combine silicon microfabrication technology with optoelectronic technology that can sense dynamic pressure, acceleration forces, acoustic emission, and many other aerospace parameters of interest. Honeywell's recent work in MEMS tuning fork gyros for inertial sensing and a MEMS free- piston engine are also described.

DNA Electrical Overstress - Hardness Assurance Data Volume.

DTIC Science & Technology

1980-07-28

boundaries due to its somewhat polysilicon nature. The grain boundaries and surface states increase the resistance measured for a particular structure and...1.3e0e0IE+ .go 9. 4Li,.4fE+43 1 . 𔃻L0 E - ,I E -. L , * I’ LI0O IVIE-.L"-’ j . OL )0 E It .=.. flOO ’II I . 00LIL-EI00 51 .I0.’LE*.1 I.04h.IC E’".L141...8217 .Ti0E+ :.’ 1 " aOE.C𔃻 0.00000 0 0 E ,. . Ol J.AE*0 - ?.,E-0 5 -1-6100000E-0j .- o Ei1 a.. 000e0E-00a .. ,C v3E-; Q ._*, - -4E-0N 1 4 .000E001 1.1 0aOE+OI

Enhanced Coagulation-Flocculation Performance of Iron-Based Coagulants: Effects of PO4 3- and SiO3 2- Modifiers

PubMed Central

Teng, Houkai; Wang, Yili; Zhang, Yuxin; Zhao, Chuanliang; Liao, Yong

2015-01-01

PO4 3- and SiO3 2- are often used as modifier to improve stability and aggregating ability of the iron-base coagulants, however, there are few reports about their detailed comparison between the coagulation performance and mechanisms. In this study, three coagulants—polyferric phosphoric sulfate (PFPS), polysilicon ferric sulfate (PFSS), and polyferric sulfate (PFS) were synthesized; their structure and morphology were characterized by Fourier transformed infrared (FT-IR) spectroscopy, X-ray diffraction (XRD) and Scanning electron microscope (SEM). Alkali titration and Ferron species analysis were employed to investigate the hydrolysis performance and species distribution. Jar test was conducted to measure their coagulation behaviors at different dosage, pH, and temperatures in which the flocs properties were measured. The results showed that a number of new compounds were formed due to the presence of PO4 3- and SiO3 2-. Moreover, PFPS and PFSS had similar level in Fea as well as Feb. Among them, PFPS produced more multi-core iron atoms polymer and content of Feb, and the formed flocs were larger and denser. It exhibited superior coagulation performance in terms of turbidity reduction, UV254 removal and residual ferric concentration. Jar test and floc breakage/regrowth experiments indicated other than charge neutrality, the dominated mechanism involved in PFSS was the adsorption between polysilicic acid and solution particle, while PFPS was sweeping, entrapment/adsorption resulting from larger polymer colloid of Fe-P chemistry bond. PMID:26339902

Micro-opto-mechanical devices and systems using epitaxial lift off

NASA Technical Reports Server (NTRS)

Camperi-Ginestet, C.; Kim, Young W.; Wilkinson, S.; Allen, M.; Jokerst, N. M.

1993-01-01

The integration of high quality, single crystal thin film gallium arsenide (GaAs) and indium phosphide (InP) based photonic and electronic materials and devices with host microstructures fabricated from materials such as silicon (Si), glass, and polymers will enable the fabrication of the next generation of micro-opto-mechanical systems (MOMS) and optoelectronic integrated circuits. Thin film semiconductor devices deposited onto arbitrary host substrates and structures create hybrid (more than one material) near-monolithic integrated systems which can be interconnected electrically using standard inexpensive microfabrication techniques such as vacuum metallization and photolithography. These integrated systems take advantage of the optical and electronic properties of compound semiconductor devices while still using host substrate materials such as silicon, polysilicon, glass and polymers in the microstructures. This type of materials optimization for specific tasks creates higher performance systems than those systems which must use trade-offs in device performance to integrate all of the function in a single material system. The low weight of these thin film devices also makes them attractive for integration with micromechanical devices which may have difficulty supporting and translating the full weight of a standard device. These thin film devices and integrated systems will be attractive for applications, however, only when the development of low cost, high yield fabrication and integration techniques makes their use economically feasible. In this paper, we discuss methods for alignment, selective deposition, and interconnection of thin film epitaxial GaAs and InP based devices onto host substrates and host microstructures.

Micro thrust and heat generator

DOEpatents

Garcia, Ernest J.

1998-01-01

A micro thrust and heat generator has a means for providing a combustion fuel source to an ignition chamber of the micro thrust and heat generator. The fuel is ignited by a ignition means within the micro thrust and heat generator's ignition chamber where it burns and creates a pressure. A nozzle formed from the combustion chamber extends outward from the combustion chamber and tappers down to a narrow diameter and then opens into a wider diameter where the nozzle then terminates outside of said combustion chamber. The pressure created within the combustion chamber accelerates as it leaves the chamber through the nozzle resulting in pressure and heat escaping from the nozzle to the atmosphere outside the micro thrust and heat generator. The micro thrust and heat generator can be microfabricated from a variety of materials, e.g., of polysilicon, on one wafer using surface micromachining batch fabrication techniques or high aspect ratio micromachining techniques (LIGA).

Micro thrust and heat generator

DOEpatents

Garcia, E.J.

1998-11-17

A micro thrust and heat generator have a means for providing a combustion fuel source to an ignition chamber of the micro thrust and heat generator. The fuel is ignited by a ignition means within the micro thrust and heat generator`s ignition chamber where it burns and creates a pressure. A nozzle formed from the combustion chamber extends outward from the combustion chamber and tappers down to a narrow diameter and then opens into a wider diameter where the nozzle then terminates outside of said combustion chamber. The pressure created within the combustion chamber accelerates as it leaves the chamber through the nozzle resulting in pressure and heat escaping from the nozzle to the atmosphere outside the micro thrust and heat generator. The micro thrust and heat generator can be microfabricated from a variety of materials, e.g., of polysilicon, on one wafer using surface micromachining batch fabrication techniques or high aspect ratio micromachining techniques (LIGA). 30 figs.

Semiconductor radiation detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patt, Bradley E.; Iwanczyk, Jan S.; Tull, Carolyn R.

A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can bemore » placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.« less

A novel setup for wafer curvature measurement at very high heating rates.

PubMed

Islam, T; Zechner, J; Bernardoni, M; Nelhiebel, M; Pippan, R

2017-02-01

The curvature evolution of a thin film layer stack containing a top Al layer is measured during temperature cycles with very high heating rates. The temperature cycles are generated by means of programmable electrical power pulses applied to miniaturized polysilicon heater systems embedded inside a semiconductor chip and the curvature is measured by a fast wafer curvature measurement setup. Fast temperature cycles with heating duration of 100 ms are created to heat the specimen up to 270 °C providing an average heating rate of 2500 K/s. As a second approach, curvature measurement utilizing laser scanning Doppler vibrometry is also demonstrated which verifies the results obtained from the fast wafer curvature measurement setup. Film stresses calculated from the measured curvature values compare well to literature results, indicating that the new method can be used to measure curvature during fast temperature cycling.

Enhancing Modulation of Thermal Conduction in Vanadium Dioxide Thin Film by Nanostructured Nanogaps

DOE PAGES

Choe, Hwan Sung; Suh, Joonki; Ko, Changhyun; ...

2017-08-02

Efficient thermal management at the nanoscale is important for reducing energy consumption and dissipation in electronic devices, lab-on-a-chip platforms and energy harvest/conversion systems. For many of these applications, it is much desired to have a solid-state structure that reversibly switches thermal conduction with high ON/OFF ratios and at high speed. We describe design and implementation of a novel, all-solid-state thermal switching device by nanostructured phase transformation, i.e., modulation of contact pressure an d area between two poly-silicon surfaces activated by microstructural change of a vanadium dioxide (VO 2 ) thin film. Our solid-state devices demonstrate large and reversible alteration ofmore » cross-plane thermal conductance as a function of temperature, achieving a conductance ratio of at least 2.5. This new approach using nanostructured phase transformation provides new opportunities for applications that require advanced temperature and heat regulations.« less

Enhancing Modulation of Thermal Conduction in Vanadium Dioxide Thin Film by Nanostructured Nanogaps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choe, Hwan Sung; Suh, Joonki; Ko, Changhyun

Efficient thermal management at the nanoscale is important for reducing energy consumption and dissipation in electronic devices, lab-on-a-chip platforms and energy harvest/conversion systems. For many of these applications, it is much desired to have a solid-state structure that reversibly switches thermal conduction with high ON/OFF ratios and at high speed. We describe design and implementation of a novel, all-solid-state thermal switching device by nanostructured phase transformation, i.e., modulation of contact pressure an d area between two poly-silicon surfaces activated by microstructural change of a vanadium dioxide (VO 2 ) thin film. Our solid-state devices demonstrate large and reversible alteration ofmore » cross-plane thermal conductance as a function of temperature, achieving a conductance ratio of at least 2.5. This new approach using nanostructured phase transformation provides new opportunities for applications that require advanced temperature and heat regulations.« less

JTEC panel on display technologies in Japan

NASA Technical Reports Server (NTRS)

Tannas, Lawrence E., Jr.; Glenn, William E.; Credelle, Thomas; Doane, J. William; Firester, Arthur H.; Thompson, Malcolm

1992-01-01

This report is one in a series of reports that describes research and development efforts in Japan in the area of display technologies. The following are included in this report: flat panel displays (technical findings, liquid crystal display development and production, large flat panel displays (FPD's), electroluminescent displays and plasma panels, infrastructure in Japan's FPD industry, market and projected sales, and new a-Si active matrix liquid crystal display (AMLCD) factory); materials for flat panel displays (liquid crystal materials, and light-emissive display materials); manufacturing and infrastructure of active matrix liquid crystal displays (manufacturing logistics and equipment); passive matrix liquid crystal displays (LCD basics, twisted nematics LCD's, supertwisted nematic LCD's, ferroelectric LCD's, and a comparison of passive matrix LCD technology); active matrix technology (basic active matrix technology, investment environment, amorphous silicon, polysilicon, and commercial products and prototypes); and projection displays (comparison of Japanese and U.S. display research, and technical evaluation of work).

Porous silicon technology for integrated microsystems

NASA Astrophysics Data System (ADS)

Wallner, Jin Zheng

With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially rough surface on the porous silicon sample without introducing significant thermal stress. (Abstract shortened by UMI.)

Meeting critical gate linewidth control needs at the 65 nm node

NASA Astrophysics Data System (ADS)

Mahorowala, Arpan; Halle, Scott; Gabor, Allen; Chu, William; Barberet, Alexandra; Samuels, Donald; Abdo, Amr; Tsou, Len; Yan, Wendy; Iseda, Seiji; Patel, Kaushal; Dirahoui, Bachir; Nomura, Asuka; Ahsan, Ishtiaq; Azam, Faisal; Berg, Gary; Brendler, Andrew; Zimmerman, Jeffrey; Faure, Tom

2006-03-01

With the nominal gate length at the 65 nm node being only 35 nm, controlling the critical dimension (CD) in polysilicon to within a few nanometers is essential to achieve a competitive power-to-performance ratio. Gate linewidths must be controlled, not only at the chip level so that the chip performs as the circuit designers and device engineers had intended, but also at the wafer level so that more chips with the optimum power-to-performance ratio are manufactured. Achieving tight across-chip linewidth variation (ACLV) and chip mean variation (CMV) is possible only if the mask-making, lithography, and etching processes are all controlled to very tight specifications. This paper identifies the various ACLV and CMV components, describes their root causes, and discusses a methodology to quantify them. For example, the site-to-site ACLV component is divided into systematic and random sub-components. The systematic component of the variation is attributed in part to pattern density variation across the field, and variation in exposure dose across the slit. The paper demonstrates our team's success in achieving the tight gate CD tolerances required for 65 nm technology. Certain key challenges faced, and methods employed to overcome them are described. For instance, the use of dose-compensation strategies to correct the small but systematic CD variations measured across the wafer, is described. Finally, the impact of immersion lithography on both ACLV and CMV is briefly discussed.

Electrothermal Microactuators With Peg Drive Improve Performance for Brain Implant Applications

PubMed Central

Anand, Sindhu; Sutanto, Jemmy; Baker, Michael S.; Okandan, Murat; Muthuswamy, Jit

2013-01-01

This paper presents a new actuation scheme for in-plane bidirectional translation of polysilicon microelectrodes. The new Chevron-peg actuation scheme uses microelectromechanical systems (MEMS) based electrothermal microactuators to move microelectrodes for brain implant applications. The design changes were motivated by specific needs identified by the in vivo testing of an earlier generation of MEMS microelectrodes that were actuated by the Chevron-latch type of mechanism. The microelectrodes actuated by the Chevron-peg mechanism discussed here show improved performance in the following key areas: higher force generation capability (111 μN per heat strip compared to 50 μN), reduced power consumption (91 mW compared to 360 mW), and reliable performance with consistent forward and backward movements of microelectrodes. Failure analysis of the Chevron-latch and the Chevron-peg type of actuation schemes showed that the latter is more robust to wear over four million cycles of operation. The parameters for the activation waveforms for Chevron-peg actuators were optimized using statistical analysis. Waveforms with a 1-ms time period and a 1-Hz frequency of operation showed minimal error between the expected and the actual movement of the microelectrodes. The new generation of Chevron-peg actuators and microelectrodes are therefore expected to enhance the longevity and performance of implanted microelectrodes in the brain.  [2011-0341] PMID:24431926

Analysis of out-of-plane thermal microactuators

NASA Astrophysics Data System (ADS)

Atre, Amarendra

2006-02-01

Out-of-plane thermal microactuators find applications in optical switches to motivate micromirrors. Accurate analysis of such actuators is beneficial for improving existing designs and constructing more energy efficient actuators. However, the analysis is complicated by the nonlinear deformation of the thermal actuators along with temperature-dependent properties of polysilicon. This paper describes the development, modeling issues and results of a three-dimensional multiphysics nonlinear finite element model of surface micromachined out-of-plane thermal actuators. The model includes conductive and convective cooling effects and takes into account the effect of variable air gap on the response of the actuator. The model is implemented to investigate the characteristics of two diverse MUMPs fabricated out-of-plane thermal actuators. Reasonable agreement is observed between simulated and measured results for the model that considers the influence of air gap on actuator response. The usefulness of the model is demonstrated by implementing it to observe the effect of actuator geometry variation on steady-state deflection response.

Dynamic thermal analysis of a concentrated photovoltaic system

NASA Astrophysics Data System (ADS)

Avrett, John T., II; Cain, Stephen C.; Pochet, Michael

2012-02-01

Concentrated photovoltaic (PV) technology represents a growing market in the field of terrestrial solar energy production. As the demand for renewable energy technologies increases, further importance is placed upon the modeling, design, and simulation of these systems. Given the U.S. Air Force cultural shift towards energy awareness and conservation, several concentrated PV systems have been installed on Air Force installations across the country. However, there has been a dearth of research within the Air Force devoted to understanding these systems in order to possibly improve the existing technologies. This research presents a new model for a simple concentrated PV system. This model accurately determines the steady state operating temperature as a function of the concentration factor for the optical part of the concentrated PV system, in order to calculate the optimum concentration that maximizes power output and efficiency. The dynamic thermal model derived is validated experimentally using a commercial polysilicon solar cell, and is shown to accurately predict the steady state temperature and ideal concentration factor.

High Efficiency Stacked Organic Light-Emitting Diodes Employing Li2O as a Connecting Layer

NASA Astrophysics Data System (ADS)

Kanno, Hiroshi; Hamada, Yuji; Nishimura, Kazuki; Okumoto, Kenji; Saito, Nobuo; Ishida, Hiroki; Takahashi, Hisakazu; Shibata, Kenichi; Mameno, Kazunobu

2006-12-01

We demonstrate the high-efficiency stacked organic light-emitting diodes (OLEDs) introducing new connecting layers. In the green stacked OLEDs, the external efficiencies increase proportionally to the number of the stacked units without suffering the decrease in power efficiency. The current, power and external efficiencies at 0.5 mA/cm2 of the stacked OLED with six stacked units (6-stacked OLED) have reached 235 cd/A, 46.6 lm/W, and 65.8%, respectively. Furthermore, we have applied the connecting layers to a white stacked OLED and fabricated an active-matrix full-color display with a low temperature polysilicon thin film transistor backplane. In the device, the current efficiency of the white 2-stacked OLED is enhanced by a factor of 2.2. The initial luminance drop is significantly suppressed for the white 2-stacked OLED compared to 1-stacked OLED. The proposed white stacked OLED technology can be applied to a full-color display for a practical use.

Dependence of Grain Size on the Performance of a Polysilicon Channel TFT for 3D NAND Flash Memory.

PubMed

Kim, Seung-Yoon; Park, Jong Kyung; Hwang, Wan Sik; Lee, Seung-Jun; Lee, Ki-Hong; Pyi, Seung Ho; Cho, Byung Jin

2016-05-01

We investigated the dependence of grain size on the performance of a polycrystalline silicon (poly-Si) channel TFT for application to 3D NAND Flash memory devices. It has been found that the device performance and memory characteristics are strongly affected by the grain size of the poly-Si channel. Higher on-state current, faster program speed, and poor endurance/reliability properties are observed when the poly-Si grain size is large. These are mainly attributed to the different local electric field induced by an oxide valley at the interface between the poly-Si channel and the gate oxide. In addition, the trap density at the gate oxide interface was successfully measured using a charge pumping method by the separation between the gate oxide interface traps and traps at the grain boundaries in the poly-Si channel. The poly-Si channel with larger grain size has lower interface trap density.

Label-Free Direct Detection of miRNAs with Poly-Silicon Nanowire Biosensors

PubMed Central

Gong, Changguo; Qi, Jiming; Xiao, Han; Jiang, Bin; Zhao, Yulan

2015-01-01

Background The diagnostic and prognostic value of microRNAs (miRNAs) in a variety of diseases is promising. The novel silicon nanowire (SiNW) biosensors have advantages in molecular detection because of their high sensitivity and fast response. In this study, poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) device was developed to achieve specific and ultrasensitive detection of miRNAs without labeling and amplification. Methods The poly-SiNW FET was fabricated by a top–down Complementary Metal Oxide Semiconductor (CMOS) wafer fabrication based technique. Single strand DNA (ssDNA) probe was bind to the surface of the poly-SiNW device which was silanated and aldehyde-modified. By comparing the difference of resistance value before and after ssDNA and miRNA hybridization, poly-SiNW device can be used to detect standard and real miRNA samples. Results Poly-SiNW device with different structures (different line width and different pitch) was applied to detect standard Let-7b sample with a detection limitation of 1 fM. One-base mismatched sequence could be distinguished meanwhile. Furthermore, these poly-SiNW arrays can detect snRNA U6 in total RNA samples extracted from HepG2 cells with a detection limitation of 0.2 μg/mL. In general, structures with pitch showed better results than those without pitch in detection of both Let-7b and snRNA U6. Moreover, structures with smaller pitch showed better detection efficacy. Conclusion Our findings suggest that poly-SiNW arrays could detect standard and real miRNA sample without labeling or amplification. Poly-SiNW biosensor device is promising for miRNA detection. PMID:26709827

Fully Integrated Biopotential Acquisition Analog Front-End IC

PubMed Central

Song, Haryong; Park, Yunjong; Kim, Hyungseup; Ko, Hyoungho

2015-01-01

A biopotential acquisition analog front-end (AFE) integrated circuit (IC) is presented. The biopotential AFE includes a capacitively coupled chopper instrumentation amplifier (CCIA) to achieve low input referred noise (IRN) and to block unwanted DC potential signals. A DC servo loop (DSL) is designed to minimize the offset voltage in the chopper amplifier and low frequency respiration artifacts. An AC coupled ripple rejection loop (RRL) is employed to reduce ripple due to chopper stabilization. A capacitive impedance boosting loop (CIBL) is designed to enhance the input impedance and common mode rejection ratio (CMRR) without additional power consumption, even under an external electrode mismatch. The AFE IC consists of two-stage CCIA that include three compensation loops (DSL, RRL, and CIBL) at each CCIA stage. The biopotential AFE is fabricated using a 0.18 µm one polysilicon and six metal layers (1P6M) complementary metal oxide semiconductor (CMOS) process. The core chip size of the AFE without input/output (I/O) pads is 10.5 mm2. A fourth-order band-pass filter (BPF) with a pass-band in the band-width from 1 Hz to 100 Hz was integrated to attenuate unwanted signal and noise. The overall gain and band-width are reconfigurable by using programmable capacitors. The IRN is measured to be 0.94 µVRMS in the pass band. The maximum amplifying gain of the pass-band was measured as 71.9 dB. The CIBL enhances the CMRR from 57.9 dB to 67 dB at 60 Hz under electrode mismatch conditions. PMID:26437404

Fast-response variable focusing micromirror array lens

NASA Astrophysics Data System (ADS)

Boyd, James G., IV; Cho, Gyoungil

2003-07-01

A reflective type Fresnel lens using an array of micromirrors is designed and fabricated using the MUMPs® surface micromachining process. The focal length of the lens can be rapidly changed by controlling both the rotation and translation of electrostatically actuated micromirrors. The rotation converges rays and the translation adjusts the optical path length difference of the rays to be integer multiples of the wavelength. The suspension spring, pedestal and electrodes are located under the mirror to maximize the optical efficiency. Relations are provided for the fill-factor and the numerical aperture as functions of the lens diameter, the mirror size, and the tolerances specified by the MUMPs® design rules. The fabricated lens is 1.8mm in diameter, and each micromirror is approximately 100mm x 100mm. The lens fill-factor is 83.7%, the numerical aperture is 0.018 for a wavelength of 632.8nm, and the resolution is approximately 22mm, whereas the resolution of a perfect aberration-free lens is 21.4μm for a NA of 0.018. The focal length ranges from 11.3mm to infinity. The simulated Strehl ratio, which is the ratio of the point spread function maximum intensity to the theoretical diffraction-limited PSF maximum intensity, is 31.2%. A mechanical analysis was performed using the finite element code IDEAS. The combined maximum rotation and translation produces a maximum stress of 301MPa, below the yield strength of polysilicon, 1.21 to 1.65GPa. Potential applications include adaptive microscope lenses for scanning particle imaging velocimetry and a visually aided micro-assembly.

A Novel, Aqueous Surface Treatment To Thermally Stabilize High Resolution Positive Photoresist Images*

NASA Astrophysics Data System (ADS)

Grunwald, John J.; Spencer, Allen C.

1986-07-01

The paper describes a new approach to thermally stabilize the already imaged profile of high resolution positive photoresists such as ULTRAMAC" PR-914. ***XD-4000, an aqueous emulsion of a blend of fluorine-bearing compounds is spun on top of the developed, positive photoresist-imaged wafer, and baked. This allows the photoresist to withstand temperatures up to at least 175 deg. C. while essentially maintaining vertical edge profiles. Also, adverse effects of "outgassing" in harsh environments, ie., plasma and ion implant are greatly minimized by allowing the high resolution imaged photoresist to be post-baked at "elevated" temperatures. Another type of product that accomplishes the same effect is ***XD-4005, an aqueous emulsion of a high temperature-resistant polymer. While the exact mechanism is yet to be identified, it is postulated that absorption of the "polymeric" species into the "skin" of the imaged resist forms a temperature resistant "envelope", thereby allowing high resolution photoresists to also serve in a "high temperature" mode, without reticulation, or other adverse effects due to thermal degradation. SEM's are presented showing imaged ULTRAMAC" PR-914 and ULTRAMAC" **EPA-914 geometries coated with XD-4000 or XD-4005 and followed by plasma etched oxide,polysilicon and aluminum. Selectivity ratios are compared with and without the novel treatment and are shown to be significantly better with the treatment. The surface-treated photoresist for thermal resistance remains easily strippable in solvent-based or plasma media, unlike photoresists that have undergone "PRIST" or other gaseous thermal stabilization methods.

First light from a very large area pixel array for high-throughput x-ray polarimetry

NASA Astrophysics Data System (ADS)

Bellazzini, R.; Spandre, G.; Minuti, M.; Baldini, L.; Brez, A.; Cavalca, F.; Latronico, L.; Omodei, N.; Massai, M. M.; Sgrò, C.; Costa, E.; Soffitta, P.; Krummenacher, F.; de Oliveira, R.

2006-06-01

We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which represents a big step forward both in terms of size and performance, is the last version of three generations of custom ASICs of increasing complexity. The CMOS pixel array has the top metal layer patterned in a matrix of 105600 hexagonal pixels at 50μm pitch. Each pixel is directly connected to the underneath full electronics chain which has been realized in the remaining five metal and single poly-silicon layers of a standard 0.18μm CMOS VLSI technology. The chip has customizable self-triggering capability and includes a signal pre-processing function for the automatic localization of the event coordinates. In this way it is possible to reduce significantly the readout time and the data volume by limiting the signal output only to those pixels belonging to the region of interest. The very small pixel area and the use of a deep sub-micron CMOS technology has brought the noise down to 50 electrons ENC. Results from in depth tests of this device when coupled to a fine pitch (50μm on a triangular pattern) Gas Electron Multiplier are presented. The matching of readout and gas amplification pitch allows getting optimal results. The application of this detector for Astronomical X-Ray Polarimetry is discussed. The experimental detector response to polarized and unpolarized X-ray radiation when working with two gas mixtures and two different photon energies is shown. Results from a full MonteCarlo simulation for several galactic and extragalactic astronomical sources are also reported.

ESR Experiments on a Single Donor Electron in Isotopically Enriched Silicon

NASA Astrophysics Data System (ADS)

Tracy, Lisa; Luhman, Dwight; Carr, Stephen; Borchardt, John; Bishop, Nathaniel; Ten Eyck, Gregory; Pluym, Tammy; Wendt, Joel; Witzel, Wayne; Blume-Kohout, Robin; Nielsen, Erik; Lilly, Michael; Carroll, Malcolm

In this talk we will discuss electron spin resonance experiments in single donor silicon qubit devices fabricated at Sandia National Labs. A self-aligned device structure consisting of a polysilicon gate SET located adjacent to the donor is used for donor electron spin readout. Using a cryogenic HEMT amplifier next to the silicon device, we demonstrate spin readout at 100 kHz bandwidth and Rabi oscillations with 0.96 visibility. Electron spin resonance measurements on these devices show a linewidth of 30 kHz and coherence times T2* = 10 us and T2 = 0.3 ms. We also discuss estimates of the fidelity of our donor electron spin qubit measurements using gate set tomography. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. ESR Experiments on a Single Donor Electron in Isotopically Enriched Silicon.

Mutiple Czochralski growth of silicon crystals from a single crucible

NASA Technical Reports Server (NTRS)

Lane, R. L.; Kachare, A. H.

1980-01-01

An apparatus for the Czochralski growth of silicon crystals is presented which is capable of producing multiple ingots from a single crucible. The growth chamber features a refillable crucible with a water-cooled, vacuum-tight isolation valve located between the pull chamber and the growth furnace tank which allows the melt crucible to always be at vacuum or low argon pressure when retrieving crystal or introducing recharge polysilicon feed stock. The grower can thus be recharged to obtain 100 kg of silicon crystal ingots from one crucible, and may accommodate crucibles up to 35 cm in diameter. Evaluation of the impurity contents and I-V characteristics of solar cells fabricated from seven ingots grown from two crucibles reveals a small but consistent decrease in cell efficiency from 10.4% to 9.6% from the first to the fourth ingot made in a single run, which is explained by impurity build-up in the residual melt. The crystal grower thus may offer economic benefits through the extension of crucible lifetime and the reduction of furnace downtime.

Stress-induced curvature engineering in surface-micromachined devices

NASA Astrophysics Data System (ADS)

Aksyuk, Vladimir A.; Pardo, Flavio; Bishop, David J.

1999-03-01

Residual stress and stress gradients play an important role in determining equilibrium shape and behavior of various Si surface-micromachined devices under applied loads. This is particularly true for system having large-area plates and long beams where curvature resulting from stress can lead to significant deviations from stress-free shape. To gain better understanding of these properties, we have measured the equilibrium shapes of various structures built on the MCNC MUMPs using an interferometric profiler. The structures were square plates and long beams composed of various combinations of polysilicon an oxide layers. Some of the structures had additional MUMPs metal layer on top, while on others in-house chromium-gold stacks of varying thickness have been deposited. Temperature dependence of the curvature was measured for some plates. We have used these data in conjunction with simple models to significantly improve the performance of our micromachined devices. While for some structures such as large area reflectors the curvature had to be minimized, it could be advantageously exploited by others, for example vertical actuators for self-assembly.

Surface Micromachined Silicon Carbide Accelerometers for Gas Turbine Applications

NASA Technical Reports Server (NTRS)

DeAnna, Russell G.

1998-01-01

A finite-element analysis of possible silicon carbide (SIC) folded-beam, lateral-resonating accelerometers is presented. Results include stiffness coefficients, acceleration sensitivities, resonant frequency versus temperature, and proof-mass displacements due to centripetal acceleration of a blade-mounted sensor. The surface micromachined devices, which are similar to the Analog Devices Inc., (Norwood, MA) air-bag crash detector, are etched from 2-pm thick, 3C-SiC films grown at 1600 K using atmospheric pressure chemical vapor deposition (APCVD). The substrate is a 500 gm-thick, (100) silicon wafer. Polysilicon or silicon dioxide is used as a sacrificial layer. The finite element analysis includes temperature-dependent properties, shape change due to volume expansion, and thermal stress caused by differential thermal expansion of the materials. The finite-element results are compared to experimental results for a SiC device of similar, but not identical, geometry. Along with changes in mechanical design, blade-mounted sensors would require on-chip circuitry to cancel displacements due to centripetal acceleration and improve sensitivity and bandwidth. These findings may result in better accelerometer designs for this application.

Critical issues for the application of integrated MEMS/CMOS technologies to inertial measurement units

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, J.H.; Ellis, J.R.; Montague, S.

1997-03-01

One of the principal applications of monolithically integrated micromechanical/microelectronic systems has been accelerometers for automotive applications. As integrated MEMS/CMOS technologies such as those developed by U.C. Berkeley, Analog Devices, and Sandia National Laboratories mature, additional systems for more sensitive inertial measurements will enter the commercial marketplace. In this paper, the authors will examine key technology design rules which impact the performance and cost of inertial measurement devices manufactured in integrated MEMS/CMOS technologies. These design parameters include: (1) minimum MEMS feature size, (2) minimum CMOS feature size, (3) maximum MEMS linear dimension, (4) number of mechanical MEMS layers, (5) MEMS/CMOS spacing.more » In particular, the embedded approach to integration developed at Sandia will be examined in the context of these technology features. Presently, this technology offers MEMS feature sizes as small as 1 {micro}m, CMOS critical dimensions of 1.25 {micro}m, MEMS linear dimensions of 1,000 {micro}m, a single mechanical level of polysilicon, and a 100 {micro}m space between MEMS and CMOS. This is applicable to modern precision guided munitions.« less

Analysis of the surface effects on adhesion in MEMS structures

NASA Astrophysics Data System (ADS)

Rusu, F.; Pustan, M.; Bîrleanu, C.; Müller, R.; Voicu, R.; Baracu, A.

2015-12-01

One of the main failure causes in microelectromechanical systems (MEMS) is stiction. Stiction is the adhesion of contacting surfaces due to surface forces. Adhesion force depends on the operating conditions and is influenced by the contact area. In this study, the adhesion force between MEMS materials and the AFM tips is analyzed using the spectroscopy in point mode of the AFM. The aim is to predict the stiction failure mode in MEMS. The investigated MEMS materials are silicon, polysilicon, platinum, aluminum, and gold. Three types of investigations were conducted. The first one aimed to determine the variation of the adhesion force with respect to the variation of the roughness. The roughness has a strong influence on the adhesion because the contact area between components increases if the roughness decreases. The second type of investigation aimed to determine the adhesion force in multiple points of each considered sample. The values obtained experimentally for the adhesion force were also validated using the JKR and DMT models. The third type of investigation was conducted with the purpose of determining the influence of the temperature on the adhesion force.

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

NASA Astrophysics Data System (ADS)

An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

2016-11-01

Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

First Implantation of Silicon Nanopore Membrane Hemofilters

PubMed Central

Kensinger, Clark; Karp, Seth; Kant, Rishi; Chui, Benjamin W.; Goldman, Kenneth; Yeager, Torin; Gould, Edward R.; Buck, Amanda; Laneve, David C.; Groszek, Joseph J.; Roy, Shuvo; Fissell, William H.

2016-01-01

An implantablehemofilter for the treatment of kidney failure depends critically on the transport characteristics of the membrane and the biocompatibility of the membrane, cartridge, and blood conduits. A novel membrane with slit-shaped pores optimizes the trade-off between permeability and selectivity, enabling implanted therapy. Sustained (3–8) day function of an implanted parallel-plate hemofilter with minimal anticoagulation was achieved by considering biocompatibility at the subnanometer scale of chemical interactions and the millimeter scale of blood fluid dynamics. A total of 400 nm-thick polysilicon flat sheet membranes with 5–8 nm 2 micron slit-shaped pores were surface-modified with polyethylene glycol. Hemofilter cartridge geometries were refined based on computational fluid dynamics predictions of blood flow. In an uncontrolled pilot study, silicon filters were implanted in six class A dogs. Cartridges were connected to the cardiovascular system by anastamoses to the aorta and inferior vena cava and filtrate was drained to collection pouches positioned in the peritoneum. Pain medicine and acetylsalicylic acid were administered twice daily until the hemofilters were harvested on postoperative days 3 (n = 2), 4 (n = 2), 5 (n = 1), and 8 (n = 1). No hemofilters were thrombosed. Animals treated for 5 and 8 days had microscopic fractures in the silicon nanopore membranes and 20–50 ml of transudative (albumin sieving coefficient 0.5 – 0.7) fluid in the collection pouches at the time of explant. Shorter experimental durations (3–4 days) resulted in filtration volumes similar to predictions based on mean arterial pressures and membrane hydraulic permeability and (∼ 0.2 – 0.3), similar to preimplantation measurements. In conclusion, a detailed mechanistic and materials science attention to blood–material interactions allows implanted hemofilters to resist thrombosis. Additional testing is needed to determine optimal membrane characteristics and identify limiting factors in long-term implantation. PMID:26978710

Fabrication and characterization of microsieve electrode array (µSEA) enabling cell positioning on 3D electrodes

NASA Astrophysics Data System (ADS)

Schurink, B.; Tiggelaar, R. M.; Gardeniers, J. G. E.; Luttge, R.

2017-01-01

Here the fabrication and characterization of a novel microelectrode array for electrophysiology applications is described, termed a micro sieve electrode array (µSEA). This silicon based µSEA device allows for hydrodynamic parallel positioning of single cells on 3D electrodes realized on the walls of inverted pyramidal shaped pores. To realize the µSEA, a previously realized silicon sieving structure is provided with a patterned boron doped poly-silicon, connecting the contact electrodes with the 3D sensing electrodes in the pores. A LPCVD silicon-rich silicon nitride layer was used as insulation. The selective opening of this insulation layer at the ends of the wiring lines allows to generate well-defined contact and sensing electrodes according to the layout used in commercial microelectrode array readers. The main challenge lays in the simultaneously selective etching of material at both the planar surface (contact electrode) as well as in the sieving structure containing the (3D) pores (sensing electrodes). For the generation of 3D electrodes in the pores a self-aligning technique was developed using the pore geometry to our advantage. This technique, based on sacrificial layer etching, allows for the fine tuning of the sensing electrode surface area and thus supports the positioning and coupling of single cells on the electrode surface in relation to the cell size. Furthermore, a self-aligning silicide is formed on the sensing electrodes to favour the electrical properties. Experiments were performed to demonstrate the working principle of the µSEA using different types of neuronal cells. Capture efficiency in the pores was  >70% with a 70% survival rate of the cell maintained for up to 14 DIV. The TiSi2-boron-doped-poly-silicon sensing electrodes of the µSEA were characterized, which indicated noise levels of  <15 µV and impedance values of 360 kΩ. These findings potentially allow for future electrophysiological measurements using the µSEA.

MEMS Louvers for Thermal Control

NASA Technical Reports Server (NTRS)

Champion, J. L.; Osiander, R.; Darrin, M. A. Garrison; Swanson, T. D.

1998-01-01

Mechanical louvers have frequently been used for spacecraft and instrument thermal control purposes. These devices typically consist of parallel or radial vanes, which can be opened or closed to vary the effective emissivity of the underlying surface. This project demonstrates the feasibility of using Micro-Electromechanical Systems (MEMS) technology to miniaturize louvers for such purposes. This concept offers the possibility of substituting the smaller, lighter weight, more rugged, and less costly MEMS devices for such mechanical louvers. In effect, a smart skin that self adjusts in response to environmental influences could be developed composed of arrays of thousands of miniaturized louvers. Several orders of magnitude size, weight, and volume decreases are potentially achieved using micro-electromechanical techniques. The use of this technology offers substantial benefits in spacecraft/instrument design, integration and testing, and flight operations. It will be particularly beneficial for the emerging smaller spacecraft and instruments of the future. In addition, this MEMS thermal louver technology can form the basis for related spacecraft instrument applications. The specific goal of this effort was to develop a preliminary MEMS device capable of modulating the effective emissivity of radiators on spacecraft. The concept pursued uses hinged panels, or louvers, in a manner such that heat emitted from the radiators is a function of louver angle. An electrostatic comb drive or other such actuator can control the louver position. The initial design calls for the louvers to be gold coated while the underlying surface is of high emissivity. Since, the base MEMS material, silicon, is transparent in the InfraRed (IR) spectrum, the device has a minimum emissivity when closed and a maximum emissivity when open. An initial set of polysilicon louver devices was designed at the Johns Hopkins Applied Physics Laboratory in conjunction with the Thermal Engineering Branch at NASA's Goddard Space Flight Center.

Thermoelectric properties of highly doped n-type polysilicon inverse opals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, J; Sinha, S

Nanostructured single-crystal silicon exhibits a remarkable increase in the figure of merit for thermoelectric energy conversion. Here we theoretically investigate a similar enhancement for polycrystalline silicon inverse opals. An inverse opal provides nanoscale grains and a thin-film like geometry to scatter phonons preferentially over electrons. Using solutions to the Boltzmann transport equation for electrons and phonons, we show that the figure of merit at 300 K is fifteen times that of bulk single-crystal silicon. Our models predict that grain boundaries are more effective than surfaces in enhancing the figure of merit. We provide insight into this effect and show thatmore » preserving a grain size smaller than the shell thickness of the inverse opal increases the figure of merit by as much as 50% when the ratio between the two features is a third. At 600 K, the figure of merit is as high as 0.6 for a shell thickness of 10 nm. This work advances the fundamental understanding of charge and heat transport in nanostructured inverse opals. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758382]« less

Micromachined low frequency rocking accelerometer with capacitive pickoff

DOEpatents

Lee, Abraham P.; Simon, Jonathon N.; McConaghy, Charles F.

2001-01-01

A micro electro mechanical sensor that uses capacitive readout electronics. The sensor involves a micromachined low frequency rocking accelerometer with capacitive pickoff fabricated by deep reactive ion etching. The accelerometer includes a central silicon proof mass, is suspended by a thin polysilicon tether, and has a moving electrode (capacitor plate or interdigitated fingers) located at each end the proof mass. During movement (acceleration), the tethered mass moves relative to the surrounding packaging, for example, and this defection is measured capacitively by a plate capacitor or interdigitated finger capacitor, having the cooperating fixed electrode (capacitor plate or interdigitated fingers) positioned on the packaging, for example. The micromachined rocking accelerometer has a low frequency (<500 Hz), high sensitivity (.mu.G), with minimal power usage. The capacitors are connected to a power supply (battery) and to sensor interface electronics, which may include an analog to digital (A/D) converter, logic, RF communication link, antenna, etc. The sensor (accelerometer) may be, for example, packaged along with the interface electronics and a communication system in a 2".times.2".times.2" cube. The proof mass may be asymmetric or symmetric. Additional actuating capacitive plates may be used for feedback control which gives a greater dynamic range.

EBIC investigation of hydrogenation of crystal defects in EFG solar silicon ribbons

NASA Technical Reports Server (NTRS)

Sullivan, T.; Ast, D. G.

1983-01-01

Changes in the contrast and resolution of defect structures in 205 Ohm-cm EFG polysilicon ribbon subjected to annealing and hydrogenation treatments were observed in a JEOL 733 Superprobe scanning electron microscope, using electron beam induced current (EBIC) collected at an A1 Schottky barrier. The Schottky barrier was formed by evaporation of A1 onto the cleaned and polished surface of the ribbon material. Measurement of beam energy, beam current, and the current induced in the Schottky diode enabled observations to be quantified. Exposure to hydrogen plasma increased charge collection efficiency. However, no simple causal relationship between the hydrogenation and charge collection efficiency could be inferred, because the collection efficiency also displayed an unexpected thermal dependence. Good quality intermediate-magnification (1000X-5400X) EBIC micrographs of several specific defect structures were obtained. Comparison of grown-in and stress-induced dislocations after annealing in vacuum at 500 C revealed that stress-induced dislocations are hydrogenated to a much greater degree than grown-in dislocations. The theoretical approximations used to predict EBIC contrast and resolution may not be entirely adequate to describe them under high beam energy and low beam current conditions.

Computer-aided design comparisons of monolithic and hybrid MEM-tunable VCSELs

NASA Astrophysics Data System (ADS)

Ochoa, Edward M.; Nelson, Thomas R., Jr.; Blum-Spahn, Olga; Lott, James A.

2003-07-01

We report and use our micro-electro-mechanically tunable vertical cavity surface emitting laser (MEM-TVCSEL) computer-aided design methodology to investigate the resonant frequency design space for monolithic and hybrid MEM-TVCSELs. For various initial optical air gap thickness, we examine the sensitivity of monolithic or hybrid MEM-TVCSEL resonant frequency by simulating zero, two, and four percent variations in III-V material growth thickness. As expected, as initial optical airgap increases, tuning range decreases due to less coupling between the active region and the tuning mirror. However, each design has different resonant frequency sensitivity to variations in III-V growth parameters. In particular, since the monolithic design is comprised of III-V material, the shift in all growth thicknesses significantly shifts the resonant frequency response. However, for hybrid MEMTVCSELs, less shift results, since the lower reflector is an Au mirror with reflectivity independent of III-V growth variations. Finally, since the hybrid design is comprised of a MUMPS polysilicon mechanical actuator, pull-in voltage remains independent of the initial optical airgap between the tuning reflector and the III-V material. Conversely, as the initial airgap increases in the monolithic design, the pull-in voltage significantly increases.

High fluence swift heavy ion structure modification of the SiO2/Si interface and gate insulator in 65 nm MOSFETs

NASA Astrophysics Data System (ADS)

Ma, Yao; Gao, Bo; Gong, Min; Willis, Maureen; Yang, Zhimei; Guan, Mingyue; Li, Yun

2017-04-01

In this work, a study of the structure modification, induced by high fluence swift heavy ion radiation, of the SiO2/Si structures and gate oxide interface in commercial 65 nm MOSFETs is performed. A key and novel point in this study is the specific use of the transmission electron microscopy (TEM) technique instead of the conventional atomic force microscope (AFM) or scanning electron microscope (SEM) techniques which are typically performed following the chemical etching of the sample to observe the changes in the structure. Using this method we show that after radiation, the appearance of a clearly visible thin layer between the SiO2 and Si is observed presenting as a variation in the TEM intensity at the interface of the two materials. Through measuring the EDX line scans we reveal that the Si:O ratio changed and that this change can be attributed to the migration of the Si towards interface after the Si-O bond is destroyed by the swift heavy ions. For the 65 nm MOSFET sample, the silicon substrate, the SiON insulator and the poly-silicon gate interfaces become blurred under the same irradiation conditions.

Design, characterization, and experimental use of the second generation MEMS acoustic emission device

NASA Astrophysics Data System (ADS)

Ozevin, Didem; Greve, David W.; Oppenheim, Irving J.; Pessiki, Stephen

2005-05-01

We describe the design, fabrication, testing and application (in structural experiments) of our 2004 (second generation) MEMS device, designed for acoustic emission sensing based upon experiments with our 2002 (first generation) device. Both devices feature a suite of resonant-type transducers in the frequency range between 100 kHz and 1 MHz. The 2002 device was designed to operate in an evacuated housing because of high squeeze film damping, as confirmed in our earlier experiments. In additional studies involving the 2002 device, experimental simulation of acoustic emissions in a steel plate, using pencil lead break or ball impact loading, showed that the transducers in the frequency range of 100 kHz-500 kHz presented clearer output signals than the transducers with frequencies higher than 500 kHz. Using the knowledge gained from the 2002 device, we designed and fabricated our second generation device in 2004 using the multi-user polysilicon surface micromachining (MUMPs) process. The 2004 device has 7 independent capacitive type transducers, compared to 18 independent transducers in the 2002 device, including 6 piston type transducers in the frequency range of 100 kHz to 500 kHz and 1 piston type transducer at 1 MHz to capture high frequency information. Piston type transducers developed in our research have two uncoupled modes so that twofold information can be acquired from a single transducer. In addition, the piston shape helps to reduce residual stress effect of surface micromachining process. The center to center distance between etch holes in the vibrating plate was reduced from 30 μm to 13 μm, in order to reduce squeeze film damping. As a result, the Q factor under atmospheric pressure for the 100 kHz transducer was increased to 2.37 from 0.18, and therefore the vacuum housing has been eliminated from the 2004 device. Sensitivities of transducers were also increased, by enlarging transducer area, in order to capture significant small amplitude acoustic emission events. The average individual transducer area in the 2004 device was increased to 6.97 mm2 as compared to 2.51 mm2 in the 2002 device. In this paper, we report the new experimental results on the characterization of the 2004 device and compare them with analytical results. We show improvements in sensitivity as measured by capacitance and as measured by pencil lead break experiments. Improvement in damping is also evaluated by admittance measurement in atmosphere. Pencil lead break experiments also show that transducers can operate in atmospheric pressure. Finally, we apply the device to acoustic emission experiments on crack propagation in a steel beam specimen, precracked in fatigue, in a four-point bending test.

Direct reading of charge multipliers with a self-triggering CMOS analog chip with 105 k pixels at 50 μm pitch

NASA Astrophysics Data System (ADS)

Bellazzini, R.; Spandre, G.; Minuti, M.; Baldini, L.; Brez, A.; Cavalca, F.; Latronico, L.; Omodei, N.; Massai, M. M.; Sgro', C.; Costa, E.; Soffitta, P.; Krummenacher, F.; de Oliveira, R.

2006-10-01

We report on a large area (15×15 mm2), high channel density (470 pixel/mm2), self-triggering CMOS analog chip that we have developed as a pixelized charge collecting electrode of a Micropattern Gas Detector. This device represents a big step forward both in terms of size and performance, and is in fact the last version of three generations of custom ASICs of increasing complexity. The top metal layer of the CMOS pixel array is patterned in a matrix of 105,600 hexagonal pixels with a 50 μm pitch. Each pixel is directly connected to the underlying full electronics chain which has been realized in the remaining five metal and single poly-silicon layers of a 0.18 μm VLSI technology. The chip, which has customizable self-triggering capabilities, also includes a signal pre-processing function for the automatic localization of the event coordinates. Thanks to these advances it is possible to significantly reduce the read-out time and the data volume by limiting the signal output only to those pixels belonging to the region of interest. In addition to the reduced read-out time and data volume, the very small pixel area and the use of a deep sub-micron CMOS technology has allowed bringing the noise down to 50 electrons ENC. Results from in depth tests of this device when coupled to a fine pitch (50 μm on a triangular pattern) Gas Electron Multiplier are presented. It was found that matching the read-out and gas amplification pitch allows getting optimal results. The experimental detector response to polarized and unpolarized X-ray radiation when working with two gas mixtures and two different photon energies is shown and the application of this detector for Astronomical X-ray Polarimetry is discussed. Results from a full Monte-Carlo simulation for several galactic and extragalactic astronomical sources are also reported.

Dynamically tuned vibratory micromechanical gyroscope accelerometer

NASA Astrophysics Data System (ADS)

Lee, Byeungleul; Oh, Yong-Soo; Park, Kyu-Yeon; Ha, Byeoungju; Ko, Younil; Kim, Jeong-gon; Kang, Seokjin; Choi, Sangon; Song, Ci M.

1997-11-01

A comb driving vibratory micro-gyroscope, which utilizes the dynamically tunable resonant modes for a higher rate- sensitivity without an accelerational error, has been developed and analyzed. The surface micromachining technology is used to fabricate the gyroscope having a vibrating part of 400 X 600 micrometers with 6 mask process, and the poly-silicon structural layer is deposited by LPCVD at 625 degrees C. The gyroscope and the interface electronics housed in a hermetically sealed vacuum package for low vibrational damping condition. This gyroscope is designed to be driven in parallel to the substrate by electrostatic forces and subject to coriolis forces along vertically, with a folded beam structure. In this scheme, the resonant frequency of the driving mode is located below than that of the sensing mode, so it is possible to adjust the sensing mode with a negative stiffness effect by applying inter-plate voltage to tune the vibration modes for a higher rate-sensitivity. Unfortunately, this micromechanical vibratory gyroscope is also sensitive to vertical acceleration force, especially in the case of a low stiffness of the vibrating structure for detecting a very small coriolis force. In this study, we distinguished the rate output and the accelerational error by phase sensitivity synchronous demodulator and devised a feedback loop to maintain resonant frequency of the vertical sensing mode by varying the inter-plate tuning voltage according to the accelerational output. Therefore, this gyroscope has a high rate-sensitivity without an acceleration error, and also can be used for a resonant accelerometer. This gyroscope was tested on the rotational rate table at the separation of 50(Hz) resonant frequencies by dynamically tuning feedback loop. Also self-sustained oscillating loop is used to apply dc 2(V) + ac 30(mVpk) driving voltage to the drive electrodes. The characteristics of the gyroscope at 0.1 (deg/sec) resolution, 50 (Hz) bandwidth, and 1.3 (mV/deg/sec) sensitivity.

Low-cost thermo-electric infrared FPAs and their automotive applications

NASA Astrophysics Data System (ADS)

Hirota, Masaki; Ohta, Yoshimi; Fukuyama, Yasuhiro

2008-04-01

This paper describes three low-cost infrared focal plane arrays (FPAs) having a 1,536, 2,304, and 10,800 elements and experimental vehicle systems. They have a low-cost potential because each element consists of p-n polysilicon thermocouples, which allows the use of low-cost ultra-fine microfabrication technology commonly employed in the conventional semiconductor manufacturing processes. To increase the responsivity of FPA, we have developed a precisely patterned Au-black absorber that has high infrared absorptivity of more than 90%. The FPA having a 2,304 elements achieved high resposivity of 4,300 V/W. In order to reduce package cost, we developed a vacuum-sealed package integrated with a molded ZnS lens. The camera aiming the temperature measurement of a passenger cabin is compact and light weight devices that measures 45 x 45 x 30 mm and weighs 190 g. The camera achieves a noise equivalent temperature deviation (NETD) of less than 0.7°C from 0 to 40°C. In this paper, we also present a several experimental systems that use infrared cameras. One experimental system is a blind spot pedestrian warning system that employs four infrared cameras. It can detect the infrared radiation emitted from a human body and alerts the driver when a pedestrian is in a blind spot. The system can also prevent the vehicle from moving in the direction of the pedestrian. Another system uses a visible-light camera and infrared sensors to detect the presence of a pedestrian in a rear blind spot and alerts the driver. The third system is a new type of human-machine interface system that enables the driver to control the car's audio system without letting go of the steering wheel. Uncooled infrared cameras are still costly, which limits their automotive use to high-end luxury cars at present. To promote widespread use of IR imaging sensors on vehicles, we need to reduce their cost further.

Preparation of silicon target material by adding Al-B master alloy in directional solidification

NASA Astrophysics Data System (ADS)

Li, Pengting; Wang, Kai; Ren, Shiqiang; Jiang, Dachuan; Tan, Yi

2017-03-01

The silicon target material was prepared by adding Al-6B master alloy in directional solidification. The microstructure was characterized and the resistivity was studied in this work. The results showed that the purity of the silicon target material was more than 99.999% (5N). The resistivity was ranges from 0.002 to 0.030 Ω·cm along the ingot height. It was revealed that the particles of AlB2 in Al-6B master alloy would react spontaneously and generate clusters of [B] and [Al] in molten silicon at 1723 K. After directional solidification, the content of B and Al were increasing gradually with the increase of solidified fraction. The measured values of B were in good agreement with the curve of the Scheil equation below 80% of the ingot height. The mean concentration of B was about 17.20 ppmw and the mean concentration of Al was about 8.07 ppmw after directional solidification. The measured values of Al were fitting well with the curve of values which the effective segregation coefficient was 0.00378. It was observed that B co-doped Al in directional solidification polysilicon could regulate resistivity mutually. This work provides the theoretical basis and technical support for industrial production of the silicon target material.

A 5- μ m pitch charge-coupled device optimized for resonant inelastic soft X-ray scattering

DOE PAGES

Andresen, N. C.; Denes, P.; Goldschmidt, A.; ...

2017-08-08

Here, we have developed a charge-coupled device (CCD) with 5 μm × 45 μm pixels on high-resistivity silicon. The fully depleted 200 μm-thick silicon detector is back-illuminated through a 10 nm-thick in situ doped polysilicon window and is thus highly efficient for soft through > 8 keV hard X-rays. The device described here is a 1.5 megapixel CCD with 2496 × 620 pixels. The pixel and camera geometry was optimized for Resonant Inelastic X-ray Scattering (RIXS) and is particularly advantageous for spectrometers with limited arm lengths. In this article, we describe the device architecture, construction and operation, and its performancemore » during tests at the Advance Light Source (ALS) 8.0.1 RIXS beamline. The improved spectroscopic performance, when compared with a current standard commercial camera, is demonstrated with a ~280 eV (C K) X-ray beam on a graphite sample. Readout noise is typically 3-6 electrons and the point spread function for soft C K X-rays in the 5 μm direction is 4.0 μm ± 0.2 μm. Finally, the measured quantum efficiency of the CCD is greater than 75% in the range from 200 eV to 1 keV.« less

A 5-μm pitch charge-coupled device optimized for resonant inelastic soft X-ray scattering

NASA Astrophysics Data System (ADS)

Andresen, N. C.; Denes, P.; Goldschmidt, A.; Joseph, J.; Karcher, A.; Tindall, C. S.

2017-08-01

We have developed a charge-coupled device (CCD) with 5 μm × 45 μm pixels on high-resistivity silicon. The fully depleted 200 μm-thick silicon detector is back-illuminated through a 10 nm-thick in situ doped polysilicon window and is thus highly efficient for soft through >8 keV hard X-rays. The device described here is a 1.5 megapixel CCD with 2496 × 620 pixels. The pixel and camera geometry was optimized for Resonant Inelastic X-ray Scattering (RIXS) and is particularly advantageous for spectrometers with limited arm lengths. In this article, we describe the device architecture, construction and operation, and its performance during tests at the Advance Light Source (ALS) 8.0.1 RIXS beamline. The improved spectroscopic performance, when compared with a current standard commercial camera, is demonstrated with a ˜280 eV (CK) X-ray beam on a graphite sample. Readout noise is typically 3-6 electrons and the point spread function for soft CK X-rays in the 5 μm direction is 4.0 μm ± 0.2 μm. The measured quantum efficiency of the CCD is greater than 75% in the range from 200 eV to 1 keV.

A 5-μm pitch charge-coupled device optimized for resonant inelastic soft X-ray scattering.

PubMed

Andresen, N C; Denes, P; Goldschmidt, A; Joseph, J; Karcher, A; Tindall, C S

2017-08-01

We have developed a charge-coupled device (CCD) with 5 μm × 45 μm pixels on high-resistivity silicon. The fully depleted 200 μm-thick silicon detector is back-illuminated through a 10 nm-thick in situ doped polysilicon window and is thus highly efficient for soft through >8 keV hard X-rays. The device described here is a 1.5 megapixel CCD with 2496 × 620 pixels. The pixel and camera geometry was optimized for Resonant Inelastic X-ray Scattering (RIXS) and is particularly advantageous for spectrometers with limited arm lengths. In this article, we describe the device architecture, construction and operation, and its performance during tests at the Advance Light Source (ALS) 8.0.1 RIXS beamline. The improved spectroscopic performance, when compared with a current standard commercial camera, is demonstrated with a ∼280 eV (C K ) X-ray beam on a graphite sample. Readout noise is typically 3-6 electrons and the point spread function for soft C K X-rays in the 5 μm direction is 4.0 μm ± 0.2 μm. The measured quantum efficiency of the CCD is greater than 75% in the range from 200 eV to 1 keV.

Polysilicon-chromium-gold intracellular chips for multi-functional biomedical applications

NASA Astrophysics Data System (ADS)

Patiño, Tania; Soriano, Jorge; Amirthalingam, Ezhil; Durán, Sara; González-Campo, Arántzazu; Duch, Marta; Ibáñez, Elena; Barrios, Leonardo; Plaza, Jose Antonio; Pérez-García, Lluïsa; Nogués, Carme

2016-04-01

The development of micro- and nanosystems for their use in biomedicine is a continuously growing field. One of the major goals of such platforms is to combine multiple functions in a single entity. However, achieving the design of an efficient and safe micro- or nanoplatform has shown to be strongly influenced by its interaction with the biological systems, where particle features or cell types play a critical role. In this work, the feasibility of using multi-material pSi-Cr-Au intracellular chips (MMICCs) for multifunctional applications by characterizing their interactions with two different cell lines, one tumorigenic and one non-tumorigenic, in terms of biocompatibility, internalization and intracellular fate, has been explored. Moreover, the impact of MMICCs on the induction of an inflammatory response has been assessed by evaluating TNFα, IL1b, IL6, and IL10 human inflammatory cytokines secretion by macrophages. Results show that MMICCs are biocompatible and their internalization efficiency is strongly dependent on the cell type. Finally as a proof-of-concept, MMICCs have been dually functionalized with transferrin and pHrodo™ Red, SE to target cancer cells and detect intracellular pH, respectively. In conclusion, MMICCs can be used as multi-functional devices due to their high biocompatibility, non-inflammatory properties and the ability of developing multiple functions.

Average power scaling of UV excimer lasers drives flat panel display and lidar applications

NASA Astrophysics Data System (ADS)

Herbst, Ludolf; Delmdahl, Ralph F.; Paetzel, Rainer

2012-03-01

Average power scaling of 308nm excimer lasers has followed an evolutionary path over the last two decades driven by diverse industrial UV laser microprocessing markets. Recently, a new dual-oscillator and beam management concept for high-average power upscaling of excimer lasers has been realized, for the first time enabling as much as 1.2kW of stabilized UV-laser average output power at a UV wavelength of 308nm. The new dual-oscillator concept enables low temperature polysilicon (LTPS) fabrication to be extended to generation six glass substrates. This is essential in terms of a more economic high-volume manufacturing of flat panel displays for the soaring smartphone and tablet PC markets. Similarly, the cost-effective production of flexible displays is driven by 308nm excimer laser power scaling. Flexible displays have enormous commercial potential and can largely use the same production equipment as is used for rigid display manufacturing. Moreover, higher average output power of 308nm excimer lasers aids reducing measurement time and improving the signal-to-noise ratio in the worldwide network of high altitude Raman lidar stations. The availability of kW-class 308nm excimer lasers has the potential to take LIDAR backscattering signal strength and achievable altitude to new levels.

Polysilicon-chromium-gold intracellular chips for multi-functional biomedical applications.

PubMed

Patiño, Tania; Soriano, Jorge; Amirthalingam, Ezhil; Durán, Sara; González-Campo, Arántzazu; Duch, Marta; Ibáñez, Elena; Barrios, Leonardo; Plaza, Jose Antonio; Pérez-García, Lluïsa; Nogués, Carme

2016-04-28

The development of micro- and nanosystems for their use in biomedicine is a continuously growing field. One of the major goals of such platforms is to combine multiple functions in a single entity. However, achieving the design of an efficient and safe micro- or nanoplatform has shown to be strongly influenced by its interaction with the biological systems, where particle features or cell types play a critical role. In this work, the feasibility of using multi-material pSi-Cr-Au intracellular chips (MMICCs) for multifunctional applications by characterizing their interactions with two different cell lines, one tumorigenic and one non-tumorigenic, in terms of biocompatibility, internalization and intracellular fate, has been explored. Moreover, the impact of MMICCs on the induction of an inflammatory response has been assessed by evaluating TNFα, IL1b, IL6, and IL10 human inflammatory cytokines secretion by macrophages. Results show that MMICCs are biocompatible and their internalization efficiency is strongly dependent on the cell type. Finally as a proof-of-concept, MMICCs have been dually functionalized with transferrin and pHrodo™ Red, SE to target cancer cells and detect intracellular pH, respectively. In conclusion, MMICCs can be used as multi-functional devices due to their high biocompatibility, non-inflammatory properties and the ability of developing multiple functions.

Development of a compact optical MEMS scanner with integrated VCSEL light source and diffractive optics

NASA Astrophysics Data System (ADS)

Krygowski, Thomas W.; Reyes, David; Rodgers, M. Steven; Smith, James H.; Warren, Mial E.; Sweatt, William C.; Blum-Spahn, Olga; Wendt, Joel R.; Asbill, Randolph E.

1999-09-01

In this work the design and initial fabrication results are reported for the components of a compact optical-MEMS laser scanning system. This system integrates a silicon MEMS laser scanner, a Vertical Cavity Surface Emitting Laser (VCSEL) and passive optical components. The MEMS scanner and VCSEL are mounted onto a fused silica substrate which serves as an optical interconnect between the devices. Two Diffractive Optical Elements (DOE's) are etched into the fused silica substrate to focus the VCSEL beam and increase the scan range. The silicon MEMS scanner consists of an actuator that continuously scans the position of a large polysilicon gold- coated shuttle containing a third DOE. Interferometric measurements show that the residual stress in the 50 micrometer X 1000 micrometer shuttle is extremely low, with a maximum deflection of only 0.18 micrometer over an 800 micrometer span for an unmetallized case and a deflection of 0.56 micrometer for the metallized case. A conservative estimate for the scan range is approximately plus or minus 4 degrees, with a spot size of about 0.5 mm, producing 50 resolvable spots. The basic system architecture, optical and MEMS design is reported in this paper, with an emphasis on the design and fabrication of the silicon MEMS scanner portion of the system.

Characterization and metrology implications of the 1997 NTRS

NASA Astrophysics Data System (ADS)

Class, W.; Wortman, J. J.

1998-11-01

In the Front-end (transistor forming) area of silicon CMOS device processing, several NTRS difficult challenges have been identified including; scaled and alternate gate dielectric materials, new DRAM dielectric materials, alternate gate materials, elevated contact structures, engineered channels, and large-area cost-effective silicon substrates. This paper deals with some of the characterization and metrology challenges facing the industry if it is to meet the projected needs identified in the NTRS. In the areas of gate and DRAM dielectric, scaling requires that existing material layers be thinned to maximize capacitance. For the current gate dielectric, SiO2 and its nitrided derivatives, direct tunneling will limit scaling to approximately 1.5nm for logic applications before power losses become unacceptable. Low power logic and memory applications may limit scaling to the 2.0-2.2nm range. Beyond these limits, dielectric materials having higher dielectric constant, will permit continued capacitance increases while allowing for the use of thicker dielectric layers, where tunneling may be minimized. In the near term silicon nitride is a promising SiO2 substitute material while in the longer term "high-k" materials such as tantalum pentoxide and barium strontium titanate (BST) will be required. For these latter materials, it is likely that a multilayer dielectric stack will be needed, consisting of an ultra-thin (1-2 atom layer) interfacial SiO2 layer and a high-k overlayer. Silicon wafer surface preparation control, as well as the control of composition, crystal structure, and thickness for such stacks pose significant characterization and metrology challenges. In addition to the need for new gate dielectric materials, new gate materials will be required to overcome the limitations of the current doped polysilicon gate materials. Such a change has broad ramifications on device electrical performance and manufacturing process robustness which again implies a broad range of new characterization and metrology requirements. Finally, the doped structure of the MOS transistor must scale to very small lateral and depth dimensions, and thermal budgets must be reduced to permit the retention of very abrupt highly doped drain and channel engineered structures. Eventually, the NTRS forecasts the need for an elevated contact structure. Here, there are significant challenges associated with three-dimensional dopant profiling, measurement of dopant activity in ultra-shallow device regions, as well as point defect metrology and characterization.

Interface traps contribution on transport mechanisms under illumination in metal-oxide-semiconductor structures based on silicon nanocrystals

NASA Astrophysics Data System (ADS)

Chatbouri, S.; Troudi, M.; Kalboussi, A.; Souifi, A.

2018-02-01

The transport phenomena in metal-oxide-semiconductor (MOS) structures having silicon nanocrystals (Si-NCs) inside the dielectric layer have been investigated, in dark condition and under visible illumination. At first, using deep-level transient spectroscopy (DLTS), we find the presence of series electron traps having very close energy levels (comprised between 0.28 and 0.45 eV) for ours devices (with/without Si-NCs). And a single peak appears at low temperature only for MOS with Si-NCs related to Si-NCs DLTS response. In dark condition, the conduction mechanism is dominated by the thermionic fast emission/capture of charge carriers from the highly doped polysilicon layer to Si-substrate through interface trap states for MOS without Si-NCs. The tunneling of charge carriers from highly poly-Si to Si substrate trough the trapping/detrapping mechanism in the Si-NCs, at low temperature, contributed to the conduction mechanism for MOS with Si-NCs. The light effect on transport mechanisms has been investigated using current-voltage ( I- V), and high frequency capacitance-voltage ( C- V) methods. We have been marked the photoactive trap effect in inversion zone at room temperature in I- V characteristics, which confirm the contribution of photo-generated charge on the transport mechanisms from highly poly-Si to Si substrate trough the photo-trapping/detrapping mechanism in the Si-NCs and interfaces traps levels. These results have been confirmed by an increasing about 10 pF in capacity's values for the C- V characteristics of MOS with Si-NCs, in the inversion region for inverse high voltage applied under photoexcitation at low temperature. These results are helpful to understand the principle of charge transport in dark condition and under illumination, of MOS structures having Si-NCs in the SiO x = 1.5 oxide matrix.

An examination of the challenges influencing science instruction in Florida elementary classrooms

NASA Astrophysics Data System (ADS)

North, Stephanie Gwinn

It has been shown that the mechanical properties of thin films tend to differ from their bulk counterparts. Specifically, the bulge and microtensile testing of thin films used in MEMS have revealed that these films demonstrate an inverse relationship between thickness and strength. A film dimension is not a material property, but it evidently does affect the mechanical performance of materials at very small thicknesses. A hypothetical explanation for this phenomenon is that as the thickness dimension of the film decreases, it is statistically less likely that imperfections exist in the material. It would require a very small thickness (or volume) to limit imperfections in a material, which is why this phenomenon is seen in films with thicknesses on the order of 100 nm to a few microns. Another hypothesized explanation is that the surface tension that exists in bulk material also exists in thin films but has a greater impact at such a small scale. The goal of this research is to identify a theoretical prediction of the strength of thin films based on its microstructural properties such as grain size and film thickness. This would minimize the need for expensive and complicated tests such as the bulge and microtensile tests. In this research, data was collected from the bulge and microtensile testing of copper, aluminum, gold, and polysilicon free-standing thin films. Statistical testing of this data revealed a definitive inverse relationship between thickness and strength, as well as between grain size and strength, as expected. However, due to a lack of a standardized method for either test, there were significant variations in the data. This research compares and analyzes the methods used by other researchers to develop a suggested set of instructions for a standardized bulge test and standardized microtensile test. The most important parameters to be controlled in each test were found to be strain rate, temperature, film deposition method, film length, and strain measurement.

Development of a novel configuration for a MEMS transducer for low bias and high resolution imaging applications

NASA Astrophysics Data System (ADS)

Emadi, Tahereh Arezoo; Buchanan, Douglas A.

2014-03-01

A robust capacitive micromachined ultrasonic transducer has been developed. In this novel configuration, a stack of two deflectable membranes are suspended over a fixed bottom electrode. Similar to conventional capacitive ultrasonic transducers, a generated electrostatic force between the electrodes causes the membranes to deflect and vibrate. However, in this new configuration the transducer effective cavity height is reduced due to the deflection of two membranes. Therefore, the transducer spring constant is more susceptible to bias voltage, which in return reduces the required bias voltage. The transducers have been produced employing a MEMS sacrificial technique where two different membrane anchoring (curved- and flat- anchors) structures, with similar membrane radii were fabricated. Highly doped polysilicon was used as the membrane material. The resonant frequencies of the two transducers have been investigated. It was found that the transducers with curved membrane anchors exhibits a larger resonant frequency shift compared to the transducers with flat membranes for a given bias voltage. Comparison has been made between the spring constant of the flat membrane transducer and that of a conventional single membrane transducer. It is shown that the multiple moving membrane transducer exhibits a larger reduction in the spring constant compared to the conventional transducer, when driven with the same bias voltage. This results in a transducer with a higher power generation capability and sensitivity.

Al-Si-Cu/TiN multilayer interconnection and Al-Ge reflow sputtering technologies for quarter-micron devices

NASA Astrophysics Data System (ADS)

Kikkawa, Takamaro; Kikuta, Kuniko

1993-05-01

Issues of interconnection technologies for quarter-micron devices are the reliability of metal lines with quarter-micron feature sizes and the formation of contact-hole-plugs with high aspect ratios. This paper describes a TiN/Al-Si-Cu/TiN/Al-Si-Cu/TiN/Ti multilayer conductor structure as a quarter-micron interconnection technology and aluminum-germanium (Al-Ge) reflow sputtering as a contact-hole filling technology. The TiN/Al-Si-Cu/TiN/Al-Si-Cu/TiN/Ti multilayer conductor structure could suppress stress-induced voiding and improve the electromigration mean-time to failure. These improvements are attributed to the fact that the grain boundaries for the Al-Si-Cu film and the interfaces between the Al-Si-Cu and the TiN films are strengthened by the rigid intermetallic compound, TiAl3. The Al-Ge alloy reflow sputtering is a candidate for contact- and via-hole filling technologies in terms of reducing fabrication costs. The Al-Ge reflow sputtering achieved low temperature contact hole filling at 300 degree(s)C. Contact holes with a diameter of 0.25 micrometers and aspect ratio of 4 could be filled. This is attributed to the low eutectic temperature for Al-Ge (424 degree(s)C) and the effect of thin polysilicon underlayer on the enhancement of Al-Ge reflow.

Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-10-01

The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO2) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n+-polySi) gate. The analysis utilizes the measured gate current density J G at high oxide fields E ox in 5.4 to 12 nm thick SiO2 films between 25 and 300 °C. The leakage current measured up to 300 °C was due to Fowler-Nordheim (FN) tunneling of electrons from the accumulated n +-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO2 conduction band (CB). It was observed that PF emission current I PF dominates FN electron tunneling current I FN at oxide electric fields E ox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide-semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.

Ultrasonic Microtransport

NASA Astrophysics Data System (ADS)

Moroney, Richard Morgan, III

We have observed numerous kinetic effects using ultrasonic flexural plate waves (FPWs) in 4mu -thick composite plates of low-stress silicon nitride, piezoelectric zinc oxide and aluminum. The wavelength is typically 100 mum, and the area 3 x 8 mm^2. A successful new surface micromachining fabrication process is presented here for the first time. FPWs have been used to move liquids and gasses with motion typically indicated by polysilicon blocks in air and polystyrene spheres in water; the velocity in air is 4.5 mm/s (with a zero-to-peak input of 3 V), and in water it is 100 mum/s (with an input of 7.8 V). Other observations include pumping of a liquid dye, and mixing near the FPW surface. All quantitative observations demonstrate that the kinetic effects of FPWs are proportional to the square of the wave amplitude. The amplitude for a typical device is 250 A at 9 V input; the power in a typical FPW is about 2 mW. The amplitude can be accurately measured using a laser diffraction technique. Experimental error is about +/-10%, and many of the results agree well with a simple theory to predict the FPW amplitude; extensions of the theory model the fluid loading of FPW devices, but experiment and theory disagree by about 15%. Pumping by flexural plate waves is an example of the phenomenon known as acoustic streaming. A common solution approach is the method of successive approximations, where the nonlinear equations are first linearized and solved. This "first-order" solution is then used to determine the inhomogeneous source terms in the linearized, "second -order" equations of motion. Theoretical predictions of streaming theory are in excellent agreement with experiment in the case where the FPW device contacts a half-space of fluid; predictions for flow in small channels encourage the development of integrated micropumps. Applications for microflow include thermal redistribution in integrated circuits and liquid movement in analytical instruments--particularly where a small dead volume is required. Capabilities of this technology and further applications are discussed. Microflow systems that integrate transport of fluids and solids with sensing, mixing and other useful tasks may become a new market-leading application for the sensor and actuator field.

Correction of large amplitude wavefront aberrations

NASA Astrophysics Data System (ADS)

Cornelissen, S. A.; Bierden, P. A.; Bifano, T. G.; Webb, R. H.; Burns, S.; Pappas, S.

2005-12-01

Recently, a number of research groups around the world have developed ophthalmic instruments capable of in vivo diffraction limited imaging of the human retina. Adaptive optics was used in these systems to compensate for the optical aberrations of the eye and provide high contrast, high resolution images. Such compensation uses a wavefront sensor and a wavefront corrector (usually a deformable mirror) coordinated in a closed- loop control system that continuously works to counteract aberrations. While those experiments produced promising results, the deformable mirrors have had insufficient range of motion to permit full correction of the large amplitude aberrations of the eye expected in a normal population of human subjects. Other retinal imaging systems developed to date with MEMS (micro-electromechanical systems) DMs suffer similar limitations. This paper describes the design, manufacture and testing of a 6um stroke polysilicon surface micromachined deformable mirror that, coupled with an new optical method to double the effective stroke of the MEMS-DM, will permit diffraction-limited retinal imaging through dilated pupils in at least 90% of the human population. A novel optical design using spherical mirrors provides a double pass of the wavefront over the deformable mirror such that a 6um mirror displacement results in 12um of wavefront compensation which could correct for 24um of wavefront error. Details of this design are discussed. Testing of the effective wavefront modification was performed using a commercial wavefront sensor. Results are presented demonstrating improvement in the amplitude of wavefront control using an existing high degree of freedom MEMS deformable mirror.

Analysis techniques of charging damage studied on three different high-current ion implanters

NASA Astrophysics Data System (ADS)

Felch, S. B.; Larson, L. A.; Current, M. I.; Lindsey, D. W.

1989-02-01

One of the Greater Silicon Valley Implant Users' Group's recent activities has been to sponsor a round-robin on charging damage, where identical wafers were implanted on three different state-of-the-art, high-current ion implanters. The devices studied were thin-dielectric (250 Å SiO2), polysilicon-gate MOS capacitors isolated by thick field oxide. The three implanters involved were the Varian/Extrion 160XP, the Eaton/Nova 10-80, and the Applied Materials PI9000. Each implanter vendor was given 48 wafers to implant with 100 keV As+ ions at a dose of 1 × 1016 cm-2. Parameters that were varied include the beam current, electron flood gun current, and chamber pressure. The charge-to-breakdown, breakdown voltage, and leakage current of several devices before anneal have been measured. The results from these tests were inconclusive as to the physical mechanism of charging and as to the effectiveness of techniques to reduce its impact on devices. However, the methodology of this study is discussed in detail to aid in the planning of future experiments. Authors' industrial affiliations: S.B. Felch, Varian Research Center, 611 Hansen Way, Palo Alto, CA 94303, USA; L.A. Larson, National Semiconductor Corp., P.O. Box 58090, Santa Clara, CA 95052-8090, USA; M.I. Current, Applied Materials, 3050 Bowers Ave., Santa Clara, CA 95054, USA; D.W. Lindsey, Eaton/NOVA, 931 Benicia Ave, Sunnyvale, CA 94086, USA.

An Evanescent Microwave Probe for Super-Resolution Nondestructive Imaging of Metals, Semiconductors, Dielectrics, Composites and Biological Specimens

NASA Technical Reports Server (NTRS)

Pathak, P. S.; Tabib-Azar, M.; Ponchak, G.

1998-01-01

Using evanescent microwaves with decay lengths determined by a combination of microwave wavelength (lambda) and waveguide termination geometry, we have imaged and mapped material non-uniformities and defects with a resolving capability of lambda/3800=79 microns at 1 GHz. In our method a microstrip quarter wavelength resonator was used to generate evanescent microwaves. We imaged materials with a wide range of conductivities. Carbon composites, dielectrics (Duroid, polymers), semiconductors (3C-SiC, polysilicon, natural diamond), metals (tungsten alloys, copper, zinc, steel), high-temperature superconductors, and botanical samples were scanned for defects, residual stresses, integrity of brazed junctions, subsurface features, areas of different film thickness and moisture content. The evanescent microwave probe is a versatile tool and it can be used to perform very fast, large scale mapping of a wide range of materials. This method of characterization compares favorably with ultrasound testing, which has a resolution of about 0.1 mm and suffers from high absorption in composite materials and poor transmission across boundaries. Eddy current methods which can have a resolution on the order of 50 microns are restricted to evaluating conducting materials. Evanescent microwave imaging, with careful choice of operating frequency and probe geometry, can have a resolution of up to 1 micron. In this method we can scan hot and moving objects, sample preparation is not required, testing is non-destructive, non-invasive and non-contact, and can be done in air, in liquid or in vacuum.

Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma

NASA Astrophysics Data System (ADS)

Carl, D. A.; Hess, D. W.; Lieberman, M. A.; Nguyen, T. D.; Gronsky, R.

1991-09-01

Thin (3-300-nm) oxides were grown on single-crystal silicon substrates at temperatures from 523 to 673 K in a low-pressure electron cyclotron resonance (ECR) oxygen plasma. Oxides were grown under floating, anodic or cathodic bias conditions, although only the oxides grown under floating or anodic bias conditions are acceptable for use as gate dielectrics in metal-oxide-semiconductor technology. Oxide thickness uniformity as measured by ellipsometry decreased with increasing oxidation time for all bias conditions. Oxidation kinetics under anodic conditions can be explained by negatively charged atomic oxygen, O-, transport limited growth. Constant current anodizations yielded three regions of growth: (1) a concentration gradient dominated regime for oxides thinner than 10 nm, (2) a field dominated regime with ohmic charged oxidant transport for oxide thickness in the range of 10 nm to approximately 100 nm, and (3) a space-charge limited regime for films thicker than approximately 100 nm. The relationship between oxide thickness (xox), overall potential drop (Vox) and ion current (ji) in the space-charge limited transport region was of the form: ji ∝ V2ox/x3ox. Transmission electron microscopy analysis of 5-60-nm-thick anodized films indicated that the silicon-silicon dioxide interface was indistinguishable from that of thermal oxides grown at 1123 K. High-frequency capacitance-voltage (C-V) and ramped bias current-voltage (I-V) studies performed on 5.4-30-nm gate thickness capacitors indicated that the as-grown ECR films had high levels of fixed oxide charge (≳1011 cm-2) and interface traps (≳1012 cm-2 eV-1). The fixed charge level could be reduced to ≊4×1010 cm-2 by a 20 min polysilicon gate activation anneal at 1123 K in nitrogen; the interface trap density at mid-band gap decreased to ≊(1-2)×1011 cm-2 eV-1 after this process. The mean breakdown strength for anodic oxides grown under optimum conditions was 10.87±0.83 MV cm-1. Electrical properties of the 5.4-8-nm gates compared well with thicker films and control dry thermal oxides of similar thicknesses.

Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2016-09-01

We have analyzed the mechanisms of leakage current conduction in passivating silicon dioxide (SiO2) films grown on (0 0 0 1) silicon (Si) face of n-type 4H-SiC (silicon carbide). It was observed that the experimentally measured gate current density in metal-oxide-silicon carbide (MOSiC) structures under positive gate bias at an oxide field Eox above 5 MV/cm is comprised of Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps in the SiO2 gap, IFN and IPF, respectively at temperatures between 27 and 200 °C. In MOSiC structures, PF mechanism dominates FN tunneling of electrons from the accumulation layer of n-4H-SiC due to high density (up to 1013 cm-2) of carbon-related acceptor-like traps located at about 2.5 eV below the SiO2 conduction band (CB). These current conduction mechanisms were taken into account in studying hole injection/trapping into 10 nm-thick tunnel oxide on the Si face of 4H-SiC during electron injection from n-4H-SiC under high-field electrical stress with positive bias on the heavily doped n-type polysilicon (n+-polySi) gate at a wide range of temperatures between 27 and 200 °C. Holes were generated in the n+-polySi anode material by the hot-electrons during their transport through thin oxide films at oxide electric fields Eox from 5.6 to 8.0 MV/cm (prior to the intrinsic oxide breakdown field). Time-to-breakdown tBD of the gate dielectric was found to follow reciprocal field (1/E) model irrespective of stress temperatures. Despite the significant amount of process-induced interfacial electron traps contributing to a large amount of leakage current via PF emission in thermally grown SiO2 on the Si-face of n-4H-SiC, MOSiC devices having a 10 nm-thick SiO2 film can be safely used in 5 V TTL logic circuits over a period of 10 years.

Parylene supported 20um*20um uncooled thermoelectric infrared detector with high fill factor

NASA Astrophysics Data System (ADS)

Modarres-Zadeh, Mohammad J.; Carpenter, Zachary S.; Rockley, Mark G.; Abdolvand, Reza

2012-06-01

Presented is a novel design for an uncooled surface-micromachined thermoelectric (TE) infrared (IR) detector. The detector features a P-doped polysilicon/Nichrome (Cr20-Ni80) thermocouple, which is embedded into a thin layer of Parylene-N to provide structural support. The low thermal conductivity (~0.1W/m.K), chemical resistance, and ease of deposition/patterning of Parylene-N make it an excellent choice of material for use in MEMS thermal detectors. This detector also features an umbrella-like IR absorber composed of a three layer stack of NiCr/SiN/NiCr to optimize IR absorption. The total device area is 20 um * 20 um per pixel with an absorber area of ~19 um * 19 um resulting in a fill factor of 90%. At room temperature, a DC responsivity of ~170V/W with a rise time of less than 8 ms is measured from the fabricated devices in vacuum when viewing a 500K blackbody without any concentrating optics. The dominant source of noise in thermoelectric IR detectors is typically Johnson noise when the detectors are operating in an open circuit condition. The fabricated detectors have resistances about 85KOhm which results in Johnson noise of about 38nV/Hz^0.5. The D* is calculated to be 9 * 106 cm*Hz0.5/ W. Preliminary finite element analysis indicates that the thermal conduction from the hot junction to the substrate through the TE wires is dominant ( GTE >> Gparylene) considering the fabricated dimensions of the parylene film and the TE wires. Thus, by further reducing the size of the TE wires, GTE can be decreased and hence, responsivity can be improved while the parylene film sustains the structural integrity of the cell.

Area-variable capacitive microaccelerometer with force-balancing electrodes

NASA Astrophysics Data System (ADS)

Ha, Byeoungju; Lee, Byeungleul; Sung, Sangkyung; Choi, Sangon; Shinn, Meenam; Oh, Yong-Soo; Song, Ci M.

1997-11-01

A surface micromachined accelerometer which senses an inertial motion with an area variation and a force balancing electrodes is developed. The grid-type planar mass of a 7 micrometers thick polysilicon is supported by four thin beams and suspended above a silicon substrate with a 1.5 micrometers air gap. The motion sensing electrodes are formed on the substrate. The sensor is designed as an interdigital rib structure that has a differential capacitor arrangement. The moveable electrodes are mounted on the mass and the pairs of the stationary electrodes are patterned on the substrate. In the accelerometer that has comb-type movable electrodes, the mechanical stress and the electrical pulling effects between a moveable electrodes and the fixed electrodes occur. However this grid-type structure can have a large area variation in a small area relatively without stress and pulling, high sensitivity can be achieved. In order to improve the dynamic rang and a linearity, a pair of comb shape force-balancing electrodes are implemented on both sides of the mass. The force-balancing electrodes are made of the same layer as the mass and anchored on a silicon substrate. When acceleration is applied in the lateral direction, the difference of capacitance results from the area variation between the two capacitors and is measured using a charge amplifier. As AC coupled complimentary pick- off signals are applied in paris of stationary electrodes, the undesirable effects due to temperature and electrical noise are reduced effectively. The accelerometer has a sensitivity of 28mV/g and a bandwidth of DC-120Hz. A resolution of 3mg and a non-linearity of 1.3 percent is achieved for a measurement range of +/- 9 g.

Development of n+-in-p planar pixel sensors for extremely high radiation environments, designed to retain high efficiency after irradiation

NASA Astrophysics Data System (ADS)

Unno, Y.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Takashima, R.; Tojo, J.; Kono, T.; Hanagaki, K.; Yajima, K.; Yamauchi, Y.; Hirose, M.; Homma, Y.; Jinnouchi, O.; Kimura, K.; Motohashi, K.; Sato, S.; Sawai, H.; Todome, K.; Yamaguchi, D.; Hara, K.; Sato, Kz.; Sato, Kj.; Hagihara, M.; Iwabuchi, S.

2016-09-01

We have developed n+-in-p pixel sensors to obtain highly radiation tolerant sensors for extremely high radiation environments such as those found at the high-luminosity LHC. We have designed novel pixel structures to eliminate the sources of efficiency loss under the bias rails after irradiation by removing the bias rail out of the boundary region and routing the bias resistors inside the area of the pixel electrodes. After irradiation by protons with the fluence of approximately 3 ×1015neq /cm2, the pixel structure with the polysilicon bias resistor and the bias rails removed far away from the boundary shows an efficiency loss of < 0.5 % per pixel at the boundary region, which is as efficient as the pixel structure without a biasing structure. The pixel structure with the bias rails at the boundary and the widened p-stop's underneath the bias rail also exhibits an improved loss of approximately 1% per pixel at the boundary region. We have elucidated the physical mechanisms behind the efficiency loss under the bias rail with TCAD simulations. The efficiency loss is due to the interplay of the bias rail acting as a charge collecting electrode with the region of low electric field in the silicon near the surface at the boundary. The region acts as a "shield" for the electrode. After irradiation, the strong applied electric field nearly eliminates the region. The TCAD simulations have shown that wide p-stop and large Si-SiO2 interface charge (inversion layer, specifically) act to shield the weighting potential. The pixel sensor of the old design irradiated by γ-rays at 2.4 MGy is confirmed to exhibit only a slight efficiency loss at the boundary.

Micromachined microphone array on a chip for turbulent boundary layer measurements

NASA Astrophysics Data System (ADS)

Krause, Joshua Steven

A surface micromachined microphone array on a single chip has been successfully designed, fabricated, characterized, and tested for aeroacoustic purposes. The microphone was designed to have venting through the diaphragm, 64 elements (8x8) on the chip, and used a capacitive transduction scheme. The microphone was fabricated using the MEMSCAP PolyMUMPs process (a foundry polysilicon surface micromachining process) along with facilities at Tufts Micro and Nano Fabrication Facility (TMNF) where a Parylene-C passivation layer deposition and release of the microstructures were performed. The devices are packaged with low profile interconnects, presenting a maximum of 100 mum of surface topology. The design of an individual microphone was completed through the use of a lumped element model (LEM) to determine the theoretical performance of the microphone. Off-chip electronics were created to allow the microphone array outputs to be redirected to one of two channels, allowing dynamic reconfiguration of the effective transducer shape in software and provide 80 dB off isolation. The characterization was completed through the use of laser Doppler vibrometry (LDV), acoustic plane wave tube and free-field calibration, and electrical noise floor testing in a Faraday cage. Measured microphone sensitivity is 0.15 mV/Pa for an individual microphone and 8.7 mV/Pa for the entire array, in close agreement with model predictions. The microphones and electronics operate over the 200--40 000 Hz band. The dynamic range extends from 60 dB SPL in a 1 Hz band to greater than 150 dB SPL. Element variability was +/-0.05 mV/Pa in sensitivity with an array yield of 95%. Wind tunnel testing at flow rates of up to 205.8 m/s indicates that the devices continue to operate in flow without damage, and can be successfully reconfigured on the fly. Care has been taken to systematically remove contaminating signals (acoustic, vibration, and noise floor) from the wind tunnel data to determine actual turbulent pressure fluctuations beneath the turbulent boundary layer to an uncertainty level of 1 dB. Analysis of measured boundary layer pressure spectra at six flow rates from 34.3 m/s to 205.8 m/s indicate single point wall spectral measurements in close agreement to the empirical models of Goody, Chase-Howe, and Efimtsov above Mach 0.4. The MEMS data more closely resembles the magnitude of the Efimtsov model at higher frequencies (25% higher above 3 kHz for the Mach 0.6 case); however, the shape of the spectral model is closer to the model of Goody (50% lower for the Mach 0.6 case for all frequencies). The Chase-Howe model does fall directly on the MEMS data starting at 6 kHz, but has a sharper slope and does not resemble the data at below 6 kHz.

Development of a wavelength tunable filter using MEMS technology

NASA Astrophysics Data System (ADS)

Liu, Junting

Microelectromechanical systems (MEMS) for optical applications have received intensive attention in recent years because of their potential applications in optical telecommunication. Traditional wavelength division multiplexing (WDM) offers high capacity but requires the fabrication of selective add-drop filters. MEMS technology offers an effective way to fabricate these components at low cost. This thesis presents the development of a device that tunes the Bragg wavelength by coupling into the evanescent field of the grating. A Bragg grating is a periodic perturbation of the refractive index along a fiber or a periodic perturbation of the structure of a planar waveguide. The Bragg wavelength can be tuned by changing the degree to which a dielectric slab couples into the evanescent field. The result is a change in the effective index of the grating, and thus a change in the wavelength that which it reflects. In this thesis Bragg gratings were successfully written into an optical fiber using phase mask technique. Mechanical polishing was used to side-polish the fiber and remove cladding to expose the core. Grating structures were also fabricated in planar waveguide using E-beam writing and dry etching. In order to achieve the smoothest possible morphology of the waveguide, plasma dry etching of transparent substrates was studied in great detail. It is found that the pre-etch cleaning procedure greatly influences the ability to obtain a smooth etched surface. Upper limits of evanescent field tuning were investigated by applying different index liquids such as D. I. water and index matching oils or by positioning different dielectric materials such as glass and silicon close to the grating. Planar waveguides were found to be more sensitive to effective index change. Two kinds of computer simulation were carried out to understand the mode profile and to estimate the value of effective index of planar waveguide under "dry" and "wet" conditions. The first one used an average depth of grating approximation. The second explicitly considered the corrugated structure of the waveguide. Results of both simulations were compared with the experimental results in order to find the proper simulation approach. The fiber or planar waveguide gratings were "device" integrated and their pro and cons were compared. Devices using an optical fiber employed a microactuator driven by electrothermal vibromotor to change the degree of coupling between fiber and "tuning block". Device using planar waveguides used an electrostatic force actuated membrane, flip-chip mounted atop the waveguide. All devices were fabricated using polysilicon surface micromachining processes. I concluded that devices driven by electrostatic force were easier to actuate and their integration with waveguide less challenging.

Nano-Multiplication-Region Avalanche Photodiodes and Arrays

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Pain, Bedabrata; Cunningham, Thomas

2008-01-01

Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be about 0.1 microns in diameter and between 0.3 and 0.4 nm high. The top layer in the reach-through structure would be heavily doped with electron-donor impurities (n+-doped) to make it act as a cathode. A layer beneath the cathode, between 0.1 and 0.2 nm thick, would be p-doped to a concentration .10(exp 17)cu cm. A thin n+-doped polysilicon pad would be formed on the top of the cathode to protect the cathode against erosion during a metal-silicon alloying step that would be part of the process of fabricating the array.

Separation of Semiconducting Carbon Nanotubes for Flexible and Stretchable Electronics Using Polymer Removable Method.

PubMed

Lei, Ting; Pochorovski, Igor; Bao, Zhenan

2017-04-18

Electronics that are soft, conformal, and stretchable are highly desirable for wearable electronics, prosthetics, and robotics. Among the various available electronic materials, single walled carbon nanotubes (SWNTs) and their network have exhibited high mechanical flexibility and stretchability, along with comparable electrical performance to traditional rigid materials, e.g. polysilicon and metal oxides. Unfortunately, SWNTs produced en masse contain a mixture of semiconducting (s-) and metallic (m-) SWNTs, rendering them unsuitable for electronic applications. Moreover, the poor solubility of SWNTs requires the introduction of insulating surfactants to properly disperse them into individual tubes for device fabrication. Compared to other SWNT dispersion and separation methods, e.g., DNA wrapping, density gradient ultracentrifugation, and gel chromatography, polymer wrapping can selectively disperse s-SWNTs with high selectivity (>99.7%), high concentration (>0.1 mg/mL), and high yield (>20%). In addition, this method only requires simple sonication and centrifuge equipment with short processing time down to 1 h. Despite these advantages, the polymer wrapping method still faces two major issues: (i) The purified s-SWNTs usually retain a substantial amount of polymers on their surface even after thorough rinsing. The low conductivity of the residual polymers impedes the charge transport in SWNT networks. (ii) Conjugated polymers used for SWNT wrapping are expensive. Their prices ($100-1000/g) are comparable or even higher than those of SWNTs ($10-300/g). These utilized conjugated polymers represent a large portion of the overall separation cost. In this Account, we summarize recent progresses in polymer design for selective dispersion and separation of SWNTs. We focus particularly on removable and/or recyclable polymers that enable low-cost and scalable separation methods. First, different separation methods are compared to show the advantages of the polymer wrapping methods. In specific, we compare different characterization methods used for purity evaluation. For s-SWNTs with high purity, i.e., >99%, short-channel (smaller than SWNT length) electrical measurement is more reliable than optical methods. Second, possible sorting mechanism and molecular design strategies are discussed. Polymer parameters such as backbone design and side chain engineering affect the polymer-SWNT interactions, leading to different dispersion concentration and selectivity. To address the above-mentioned limiting factors in both polymer contamination and cost issues, we describe two important polymer removal and cycling approaches: (i) changing polymer wrapping conformation to release SWNTs; (ii) depolymerization of conjugated polymer into small molecular units that have less affinity toward SWNTs. These methods allow the removal and recycling of the wrapping polymers, thus providing low-cost and clean s-SWNTs. Third, we discuss various applications of polymer-sorted s-SWNTs, including flexible/stretchable thin-film transistors, thermoelectric devices, and solar cells. In these applications, polymer-sorted s-SWNTs and their networks have exhibited good processability, attractive mechanical properties, and high electrical performance. An increasing number of studies have shown that the removable polymer approaches can completely remove polymer residues in SWNT networks and lead to enhanced charge carrier mobility, higher conductivity, and better heterojunction interface.

System and method for deriving a process-based specification

NASA Technical Reports Server (NTRS)

Hinchey, Michael Gerard (Inventor); Rouff, Christopher A. (Inventor); Rash, James Larry (Inventor)

2009-01-01

A system and method for deriving a process-based specification for a system is disclosed. The process-based specification is mathematically inferred from a trace-based specification. The trace-based specification is derived from a non-empty set of traces or natural language scenarios. The process-based specification is mathematically equivalent to the trace-based specification. Code is generated, if applicable, from the process-based specification. A process, or phases of a process, using the features disclosed can be reversed and repeated to allow for an interactive development and modification of legacy systems. The process is applicable to any class of system, including, but not limited to, biological and physical systems, electrical and electro-mechanical systems in addition to software, hardware and hybrid hardware-software systems.

Differentiating location- and distance-based processes in memory for time: an ERP study.

PubMed

Curran, Tim; Friedman, William J

2003-09-01

Memory for the time of events may benefit from reconstructive, location-based, and distance-based processes, but these processes are difficult to dissociate with behavioral methods. Neuropsychological research has emphasized the contribution of prefrontal brain mechanisms to memory for time but has not clearly differentiated location- from distance-based processing. The present experiment recorded event-related brain potentials (ERPs) while subjects completed two different temporal memory tests, designed to emphasize either location- or distance-based processing. The subjects' reports of location-based versus distance-based strategies and the reaction time pattern validated our experimental manipulation. Late (800-1,800 msec) frontal ERP effects were related to location-based processing. The results provide support for a two-process theory of memory for time and suggest that frontal memory mechanisms are specifically related to reconstructive, location-based processing.

On Intelligent Design and Planning Method of Process Route Based on Gun Breech Machining Process

NASA Astrophysics Data System (ADS)

Hongzhi, Zhao; Jian, Zhang

2018-03-01

The paper states an approach of intelligent design and planning of process route based on gun breech machining process, against several problems, such as complex machining process of gun breech, tedious route design and long period of its traditional unmanageable process route. Based on gun breech machining process, intelligent design and planning system of process route are developed by virtue of DEST and VC++. The system includes two functional modules--process route intelligent design and its planning. The process route intelligent design module, through the analysis of gun breech machining process, summarizes breech process knowledge so as to complete the design of knowledge base and inference engine. And then gun breech process route intelligently output. On the basis of intelligent route design module, the final process route is made, edited and managed in the process route planning module.

Situation awareness acquired from monitoring process plants - the Process Overview concept and measure.

PubMed

Lau, Nathan; Jamieson, Greg A; Skraaning, Gyrd

2016-07-01

We introduce Process Overview, a situation awareness characterisation of the knowledge derived from monitoring process plants. Process Overview is based on observational studies of process control work in the literature. The characterisation is applied to develop a query-based measure called the Process Overview Measure. The goal of the measure is to improve coupling between situation and awareness according to process plant properties and operator cognitive work. A companion article presents the empirical evaluation of the Process Overview Measure in a realistic process control setting. The Process Overview Measure demonstrated sensitivity and validity by revealing significant effects of experimental manipulations that corroborated with other empirical results. The measure also demonstrated adequate inter-rater reliability and practicality for measuring SA based on data collected by process experts. Practitioner Summary: The Process Overview Measure is a query-based measure for assessing operator situation awareness from monitoring process plants in representative settings.

A new window of opportunity to reject process-based biotechnology regulation

PubMed Central

Marchant, Gary E; Stevens, Yvonne A

2015-01-01

ABSTRACT. The question of whether biotechnology regulation should be based on the process or the product has long been debated, with different jurisdictions adopting different approaches. The European Union has adopted a process-based approach, Canada has adopted a product-based approach, and the United States has implemented a hybrid system. With the recent proliferation of new methods of genetic modification, such as gene editing, process-based regulatory systems, which are premised on a binary system of transgenic and conventional approaches, will become increasingly obsolete and unsustainable. To avoid unreasonable, unfair and arbitrary results, nations that have adopted process-based approaches will need to migrate to a product-based approach that considers the novelty and risks of the individual trait, rather than the process by which that trait was produced. This commentary suggests some approaches for the design of such a product-based approach. PMID:26930116

A new window of opportunity to reject process-based biotechnology regulation.

PubMed

Marchant, Gary E; Stevens, Yvonne A

2015-01-01

The question of whether biotechnology regulation should be based on the process or the product has long been debated, with different jurisdictions adopting different approaches. The European Union has adopted a process-based approach, Canada has adopted a product-based approach, and the United States has implemented a hybrid system. With the recent proliferation of new methods of genetic modification, such as gene editing, process-based regulatory systems, which are premised on a binary system of transgenic and conventional approaches, will become increasingly obsolete and unsustainable. To avoid unreasonable, unfair and arbitrary results, nations that have adopted process-based approaches will need to migrate to a product-based approach that considers the novelty and risks of the individual trait, rather than the process by which that trait was produced. This commentary suggests some approaches for the design of such a product-based approach.

Implicit Schemata and Categories in Memory-Based Language Processing

ERIC Educational Resources Information Center

van den Bosch, Antal; Daelemans, Walter

2013-01-01

Memory-based language processing (MBLP) is an approach to language processing based on exemplar storage during learning and analogical reasoning during processing. From a cognitive perspective, the approach is attractive as a model for human language processing because it does not make any assumptions about the way abstractions are shaped, nor any…

Models of Quantitative Estimations: Rule-Based and Exemplar-Based Processes Compared

ERIC Educational Resources Information Center

von Helversen, Bettina; Rieskamp, Jorg

2009-01-01

The cognitive processes underlying quantitative estimations vary. Past research has identified task-contingent changes between rule-based and exemplar-based processes (P. Juslin, L. Karlsson, & H. Olsson, 2008). B. von Helversen and J. Rieskamp (2008), however, proposed a simple rule-based model--the mapping model--that outperformed the…

Unified Modeling Language (UML) for hospital-based cancer registration processes.

PubMed

Shiki, Naomi; Ohno, Yuko; Fujii, Ayumi; Murata, Taizo; Matsumura, Yasushi

2008-01-01

Hospital-based cancer registry involves complex processing steps that span across multiple departments. In addition, management techniques and registration procedures differ depending on each medical facility. Establishing processes for hospital-based cancer registry requires clarifying specific functions and labor needed. In recent years, the business modeling technique, in which management evaluation is done by clearly spelling out processes and functions, has been applied to business process analysis. However, there are few analytical reports describing the applications of these concepts to medical-related work. In this study, we initially sought to model hospital-based cancer registration processes using the Unified Modeling Language (UML), to clarify functions. The object of this study was the cancer registry of Osaka University Hospital. We organized the hospital-based cancer registration processes based on interview and observational surveys, and produced an As-Is model using activity, use-case, and class diagrams. After drafting every UML model, it was fed-back to practitioners to check its validity and improved. We were able to define the workflow for each department using activity diagrams. In addition, by using use-case diagrams we were able to classify each department within the hospital as a system, and thereby specify the core processes and staff that were responsible for each department. The class diagrams were effective in systematically organizing the information to be used for hospital-based cancer registries. Using UML modeling, hospital-based cancer registration processes were broadly classified into three separate processes, namely, registration tasks, quality control, and filing data. An additional 14 functions were also extracted. Many tasks take place within the hospital-based cancer registry office, but the process of providing information spans across multiple departments. Moreover, additional tasks were required in comparison to using a standardized system because the hospital-based cancer registration system was constructed with the pre-existing computer system in Osaka University Hospital. Difficulty of utilization of useful information for cancer registration processes was shown to increase the task workload. By using UML, we were able to clarify functions and extract the typical processes for a hospital-based cancer registry. Modeling can provide a basis of process analysis for establishment of efficient hospital-based cancer registration processes in each institute.

A neuroanatomical model of space-based and object-centered processing in spatial neglect.

PubMed

Pedrazzini, Elena; Schnider, Armin; Ptak, Radek

2017-11-01

Visual attention can be deployed in space-based or object-centered reference frames. Right-hemisphere damage may lead to distinct deficits of space- or object-based processing, and such dissociations are thought to underlie the heterogeneous nature of spatial neglect. Previous studies have suggested that object-centered processing deficits (such as in copying, reading or line bisection) result from damage to retro-rolandic regions while impaired spatial exploration reflects damage to more anterior regions. However, this evidence is based on small samples and heterogeneous tasks. Here, we tested a theoretical model of neglect that takes in account the space- and object-based processing and relates them to neuroanatomical predictors. One hundred and one right-hemisphere-damaged patients were examined with classic neuropsychological tests and structural brain imaging. Relations between neglect measures and damage to the temporal-parietal junction, intraparietal cortex, insula and middle frontal gyrus were examined with two structural equation models by assuming that object-centered processing (involved in line bisection and single-word reading) and space-based processing (involved in cancelation tasks) either represented a unique latent variable or two distinct variables. Of these two models the latter had better explanatory power. Damage to the intraparietal sulcus was a significant predictor of object-centered, but not space-based processing, while damage to the temporal-parietal junction predicted space-based, but not object-centered processing. Space-based processing and object-centered processing were strongly intercorrelated, indicating that they rely on similar, albeit partly dissociated processes. These findings indicate that object-centered and space-based deficits in neglect are partly independent and result from superior parietal and inferior parietal damage, respectively.

Musical rhythm and reading development: does beat processing matter?

PubMed

Ozernov-Palchik, Ola; Patel, Aniruddh D

2018-05-20

There is mounting evidence for links between musical rhythm processing and reading-related cognitive skills, such as phonological awareness. This may be because music and speech are rhythmic: both involve processing complex sound sequences with systematic patterns of timing, accent, and grouping. Yet, there is a salient difference between musical and speech rhythm: musical rhythm is often beat-based (based on an underlying grid of equal time intervals), while speech rhythm is not. Thus, the role of beat-based processing in the reading-rhythm relationship is not clear. Is there is a distinct relation between beat-based processing mechanisms and reading-related language skills, or is the rhythm-reading link entirely due to shared mechanisms for processing nonbeat-based aspects of temporal structure? We discuss recent evidence for a distinct link between beat-based processing and early reading abilities in young children, and suggest experimental designs that would allow one to further methodically investigate this relationship. We propose that beat-based processing taps into a listener's ability to use rich contextual regularities to form predictions, a skill important for reading development. © 2018 New York Academy of Sciences.

Conceptual information processing: A robust approach to KBS-DBMS integration

NASA Technical Reports Server (NTRS)

Lazzara, Allen V.; Tepfenhart, William; White, Richard C.; Liuzzi, Raymond

1987-01-01

Integrating the respective functionality and architectural features of knowledge base and data base management systems is a topic of considerable interest. Several aspects of this topic and associated issues are addressed. The significance of integration and the problems associated with accomplishing that integration are discussed. The shortcomings of current approaches to integration and the need to fuse the capabilities of both knowledge base and data base management systems motivates the investigation of information processing paradigms. One such paradigm is concept based processing, i.e., processing based on concepts and conceptual relations. An approach to robust knowledge and data base system integration is discussed by addressing progress made in the development of an experimental model for conceptual information processing.

The research on construction and application of machining process knowledge base

NASA Astrophysics Data System (ADS)

Zhao, Tan; Qiao, Lihong; Qie, Yifan; Guo, Kai

2018-03-01

In order to realize the application of knowledge in machining process design, from the perspective of knowledge in the application of computer aided process planning(CAPP), a hierarchical structure of knowledge classification is established according to the characteristics of mechanical engineering field. The expression of machining process knowledge is structured by means of production rules and the object-oriented methods. Three kinds of knowledge base models are constructed according to the representation of machining process knowledge. In this paper, the definition and classification of machining process knowledge, knowledge model, and the application flow of the process design based on the knowledge base are given, and the main steps of the design decision of the machine tool are carried out as an application by using the knowledge base.

Affective-cognitive meta-bases versus structural bases of attitudes predict processing interest versus efficiency.

PubMed

See, Ya Hui Michelle; Petty, Richard E; Fabrigar, Leandre R

2013-08-01

We proposed that (a) processing interest for affective over cognitive information is captured by meta-bases (i.e., the extent to which people subjectively perceive themselves to rely on affect or cognition in their attitudes) and (b) processing efficiency for affective over cognitive information is captured by structural bases (i.e., the extent to which attitudes are more evaluatively congruent with affect or cognition). Because processing speed can disentangle interest from efficiency by being manifest as longer or shorter reading times, we hypothesized and found that more affective meta-bases predicted longer affective than cognitive reading time when processing efficiency was held constant (Study 1). In contrast, more affective structural bases predicted shorter affective than cognitive reading time when participants were constrained in their ability to allocate resources deliberatively (Study 2). When deliberation was neither encouraged nor constrained, effects for meta-bases and structural bases emerged (Study 3). Implications for affective-cognitive processing and other attitudes-relevant constructs are discussed.

Process-based Cost Estimation for Ramjet/Scramjet Engines

NASA Technical Reports Server (NTRS)

Singh, Brijendra; Torres, Felix; Nesman, Miles; Reynolds, John

2003-01-01

Process-based cost estimation plays a key role in effecting cultural change that integrates distributed science, technology and engineering teams to rapidly create innovative and affordable products. Working together, NASA Glenn Research Center and Boeing Canoga Park have developed a methodology of process-based cost estimation bridging the methodologies of high-level parametric models and detailed bottoms-up estimation. The NASA GRC/Boeing CP process-based cost model provides a probabilistic structure of layered cost drivers. High-level inputs characterize mission requirements, system performance, and relevant economic factors. Design alternatives are extracted from a standard, product-specific work breakdown structure to pre-load lower-level cost driver inputs and generate the cost-risk analysis. As product design progresses and matures the lower level more detailed cost drivers can be re-accessed and the projected variation of input values narrowed, thereby generating a progressively more accurate estimate of cost-risk. Incorporated into the process-based cost model are techniques for decision analysis, specifically, the analytic hierarchy process (AHP) and functional utility analysis. Design alternatives may then be evaluated not just on cost-risk, but also user defined performance and schedule criteria. This implementation of full-trade study support contributes significantly to the realization of the integrated development environment. The process-based cost estimation model generates development and manufacturing cost estimates. The development team plans to expand the manufacturing process base from approximately 80 manufacturing processes to over 250 processes. Operation and support cost modeling is also envisioned. Process-based estimation considers the materials, resources, and processes in establishing cost-risk and rather depending on weight as an input, actually estimates weight along with cost and schedule.

[Near infrared spectroscopy based process trajectory technology and its application in monitoring and controlling of traditional Chinese medicine manufacturing process].

PubMed

Li, Wen-Long; Qu, Hai-Bin

2016-10-01

In this paper, the principle of NIRS (near infrared spectroscopy)-based process trajectory technology was introduced.The main steps of the technique include:① in-line collection of the processes spectra of different technics; ② unfolding of the 3-D process spectra;③ determination of the process trajectories and their normal limits;④ monitoring of the new batches with the established MSPC (multivariate statistical process control) models.Applications of the technology in the chemical and biological medicines were reviewed briefly. By a comprehensive introduction of our feasibility research on the monitoring of traditional Chinese medicine technical process using NIRS-based multivariate process trajectories, several important problems of the practical applications which need urgent solutions are proposed, and also the application prospect of the NIRS-based process trajectory technology is fully discussed and put forward in the end. Copyright© by the Chinese Pharmaceutical Association.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hohimer, J.P.

The use of laser-based analytical methods in nuclear-fuel processing plants is considered. The species and locations for accountability, process control, and effluent control measurements in the Coprocessing, Thorex, and reference Purex fuel processing operations are identified and the conventional analytical methods used for these measurements are summarized. The laser analytical methods based upon Raman, absorption, fluorescence, and nonlinear spectroscopy are reviewed and evaluated for their use in fuel processing plants. After a comparison of the capabilities of the laser-based and conventional analytical methods, the promising areas of application of the laser-based methods in fuel processing plants are identified.

SEMICONDUCTOR TECHNOLOGY A signal processing method for the friction-based endpoint detection system of a CMP process

NASA Astrophysics Data System (ADS)

Chi, Xu; Dongming, Guo; Zhuji, Jin; Renke, Kang

2010-12-01

A signal processing method for the friction-based endpoint detection system of a chemical mechanical polishing (CMP) process is presented. The signal process method uses the wavelet threshold denoising method to reduce the noise contained in the measured original signal, extracts the Kalman filter innovation from the denoised signal as the feature signal, and judges the CMP endpoint based on the feature of the Kalman filter innovation sequence during the CMP process. Applying the signal processing method, the endpoint detection experiments of the Cu CMP process were carried out. The results show that the signal processing method can judge the endpoint of the Cu CMP process.

Social value and individual choice: The value of a choice-based decision-making process in a collectively funded health system.

PubMed

Espinoza, Manuel Antonio; Manca, Andrea; Claxton, Karl; Sculpher, Mark

2018-02-01

Evidence about cost-effectiveness is increasingly being used to inform decisions about the funding of new technologies that are usually implemented as guidelines from centralized decision-making bodies. However, there is also an increasing recognition for the role of patients in determining their preferred treatment option. This paper presents a method to estimate the value of implementing a choice-based decision process using the cost-effectiveness analysis toolbox. This value is estimated for 3 alternative scenarios. First, it compares centralized decisions, based on population average cost-effectiveness, against a decision process based on patient choice. Second, it compares centralized decision based on patients' subgroups versus an individual choice-based decision process. Third, it compares a centralized process based on average cost-effectiveness against a choice-based process where patients choose according to a different measure of outcome to that used by the centralized decision maker. The methods are applied to a case study for the management of acute coronary syndrome. It is concluded that implementing a choice-based process of treatment allocation may be an option in collectively funded health systems. However, its value will depend on the specific health problem and the social values considered relevant to the health system. Copyright © 2017 John Wiley & Sons, Ltd.

Pre- and Post-Processing Tools to Create and Characterize Particle-Based Composite Model Structures

DTIC Science & Technology

2017-11-01

ARL-TR-8213 ● NOV 2017 US Army Research Laboratory Pre- and Post -Processing Tools to Create and Characterize Particle-Based...ARL-TR-8213 ● NOV 2017 US Army Research Laboratory Pre- and Post -Processing Tools to Create and Characterize Particle-Based Composite...AND SUBTITLE Pre- and Post -Processing Tools to Create and Characterize Particle-Based Composite Model Structures 5a. CONTRACT NUMBER 5b. GRANT

Introduction to Radar Signal and Data Processing: The Opportunity

DTIC Science & Technology

2006-09-01

SpA) Director of Analysis of Integrated Systems Group Via Tiburtina Km. 12.400 00131 Rome ITALY e.mail: afarina@selex-si.com Key words: radar...signal processing, data processing, adaptivity, space-time adaptive processing, knowledge based systems , CFAR. 1. SUMMARY This paper introduces to...the lecture series dedicated to the knowledge-based radar signal and data processing. Knowledge-based expert system (KBS) is in the realm of

Patch-based models and algorithms for image processing: a review of the basic principles and methods, and their application in computed tomography.

PubMed

Karimi, Davood; Ward, Rabab K

2016-10-01

Image models are central to all image processing tasks. The great advancements in digital image processing would not have been made possible without powerful models which, themselves, have evolved over time. In the past decade, "patch-based" models have emerged as one of the most effective models for natural images. Patch-based methods have outperformed other competing methods in many image processing tasks. These developments have come at a time when greater availability of powerful computational resources and growing concerns over the health risks of the ionizing radiation encourage research on image processing algorithms for computed tomography (CT). The goal of this paper is to explain the principles of patch-based methods and to review some of their recent applications in CT. We first review the central concepts in patch-based image processing and explain some of the state-of-the-art algorithms, with a focus on aspects that are more relevant to CT. Then, we review some of the recent application of patch-based methods in CT. Patch-based methods have already transformed the field of image processing, leading to state-of-the-art results in many applications. More recently, several studies have proposed patch-based algorithms for various image processing tasks in CT, from denoising and restoration to iterative reconstruction. Although these studies have reported good results, the true potential of patch-based methods for CT has not been yet appreciated. Patch-based methods can play a central role in image reconstruction and processing for CT. They have the potential to lead to substantial improvements in the current state of the art.

76 FR 70878 - Revitalizing Base Closure Communities and Addressing Impacts of Realignment

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-16

... base closure process to conform to the amendment to the Defense Base Closure and Realignment Act of... departments to expedite the EDC process. Closed military bases represent a potential engine of economic... purposes of establishing EDC terms and conditions. It also eliminates the need to establish a process by...

Expert system for web based collaborative CAE

NASA Astrophysics Data System (ADS)

Hou, Liang; Lin, Zusheng

2006-11-01

An expert system for web based collaborative CAE was developed based on knowledge engineering, relational database and commercial FEA (Finite element analysis) software. The architecture of the system was illustrated. In this system, the experts' experiences, theories and typical examples and other related knowledge, which will be used in the stage of pre-process in FEA, were categorized into analysis process and object knowledge. Then, the integrated knowledge model based on object-oriented method and rule based method was described. The integrated reasoning process based on CBR (case based reasoning) and rule based reasoning was presented. Finally, the analysis process of this expert system in web based CAE application was illustrated, and an analysis example of a machine tool's column was illustrated to prove the validity of the system.

Hydrothermal Processing of Base Camp Solid Wastes To Allow Onsite Recycling

DTIC Science & Technology

2008-09-01

ER D C/ CE R L TR -0 8 -1 3 Hydrothermal Processing of Base Camp Solid Wastes To Allow Onsite Recycling Gary L. Gerdes, Deborah...release; distribution is unlimited. ERDC/CERL TR-08-13 September 2008 Hydrothermal Processing of Base Camp Solid Wastes To Allow Onsite Recycling...a technology to process domestic solid waste using a unique hydrothermal system. The process was successfully demonstrated at Forts Benning and

Collaboration processes and perceived effectiveness of integrated care projects in primary care: a longitudinal mixed-methods study.

PubMed

Valentijn, Pim P; Ruwaard, Dirk; Vrijhoef, Hubertus J M; de Bont, Antoinette; Arends, Rosa Y; Bruijnzeels, Marc A

2015-10-09

Collaborative partnerships are considered an essential strategy for integrating local disjointed health and social services. Currently, little evidence is available on how integrated care arrangements between professionals and organisations are achieved through the evolution of collaboration processes over time. The first aim was to develop a typology of integrated care projects (ICPs) based on the final degree of integration as perceived by multiple stakeholders. The second aim was to study how types of integration differ in changes of collaboration processes over time and final perceived effectiveness. A longitudinal mixed-methods study design based on two data sources (surveys and interviews) was used to identify the perceived degree of integration and patterns in collaboration among 42 ICPs in primary care in The Netherlands. We used cluster analysis to identify distinct subgroups of ICPs based on the final perceived degree of integration from a professional, organisational and system perspective. With the use of ANOVAs, the subgroups were contrasted based on: 1) changes in collaboration processes over time (shared ambition, interests and mutual gains, relationship dynamics, organisational dynamics and process management) and 2) final perceived effectiveness (i.e. rated success) at the professional, organisational and system levels. The ICPs were classified into three subgroups with: 'United Integration Perspectives (UIP)', 'Disunited Integration Perspectives (DIP)' and 'Professional-oriented Integration Perspectives (PIP)'. ICPs within the UIP subgroup made the strongest increase in trust-based (mutual gains and relationship dynamics) as well as control-based (organisational dynamics and process management) collaboration processes and had the highest overall effectiveness rates. On the other hand, ICPs with the DIP subgroup decreased on collaboration processes and had the lowest overall effectiveness rates. ICPs within the PIP subgroup increased in control-based collaboration processes (organisational dynamics and process management) and had the highest effectiveness rates at the professional level. The differences across the three subgroups in terms of the development of collaboration processes and the final perceived effectiveness provide evidence that united stakeholders' perspectives are achieved through a constructive collaboration process over time. Disunited perspectives at the professional, organisation and system levels can be aligned by both trust-based and control-based collaboration processes.

Empirical evaluation of the Process Overview Measure for assessing situation awareness in process plants.

PubMed

Lau, Nathan; Jamieson, Greg A; Skraaning, Gyrd

2016-03-01

The Process Overview Measure is a query-based measure developed to assess operator situation awareness (SA) from monitoring process plants. A companion paper describes how the measure has been developed according to process plant properties and operator cognitive work. The Process Overview Measure demonstrated practicality, sensitivity, validity and reliability in two full-scope simulator experiments investigating dramatically different operational concepts. Practicality was assessed based on qualitative feedback of participants and researchers. The Process Overview Measure demonstrated sensitivity and validity by revealing significant effects of experimental manipulations that corroborated with other empirical results. The measure also demonstrated adequate inter-rater reliability and practicality for measuring SA in full-scope simulator settings based on data collected on process experts. Thus, full-scope simulator studies can employ the Process Overview Measure to reveal the impact of new control room technology and operational concepts on monitoring process plants. Practitioner Summary: The Process Overview Measure is a query-based measure that demonstrated practicality, sensitivity, validity and reliability for assessing operator situation awareness (SA) from monitoring process plants in representative settings.

Understanding community-based processes for research ethics review: a national study.

PubMed

Shore, Nancy; Brazauskas, Ruta; Drew, Elaine; Wong, Kristine A; Moy, Lisa; Baden, Andrea Corage; Cyr, Kirsten; Ulevicus, Jocelyn; Seifer, Sarena D

2011-12-01

Institutional review boards (IRBs), designed to protect individual study participants, do not routinely assess community consent, risks, and benefits. Community groups are establishing ethics review processes to determine whether and how research is conducted in their communities. To strengthen the ethics review of community-engaged research, we sought to identify and describe these processes. In 2008 we conducted an online survey of US-based community groups and community-institutional partnerships involved in human-participants research. We identified 109 respondents who met participation criteria and had ethics review processes in place. The respondents' processes mainly functioned through community-institutional partnerships, community-based organizations, community health centers, and tribal organizations. These processes had been created primarily to ensure that the involved communities were engaged in and directly benefited from research and were protected from research harms. The primary process benefits included giving communities a voice in determining which studies were conducted and ensuring that studies were relevant and feasible, and that they built community capacity. The primary process challenges were the time and resources needed to support the process. Community-based processes for ethics review consider community-level ethical issues that institution-based IRBs often do not.

Action video games and improved attentional control: Disentangling selection- and response-based processes.

PubMed

Chisholm, Joseph D; Kingstone, Alan

2015-10-01

Research has demonstrated that experience with action video games is associated with improvements in a host of cognitive tasks. Evidence from paradigms that assess aspects of attention has suggested that action video game players (AVGPs) possess greater control over the allocation of attentional resources than do non-video-game players (NVGPs). Using a compound search task that teased apart selection- and response-based processes (Duncan, 1985), we required participants to perform an oculomotor capture task in which they made saccades to a uniquely colored target (selection-based process) and then produced a manual directional response based on information within the target (response-based process). We replicated the finding that AVGPs are less susceptible to attentional distraction and, critically, revealed that AVGPs outperform NVGPs on both selection-based and response-based processes. These results not only are consistent with the improved-attentional-control account of AVGP benefits, but they suggest that the benefit of action video game playing extends across the full breadth of attention-mediated stimulus-response processes that impact human performance.

Comparative evaluation of urban storm water quality models

NASA Astrophysics Data System (ADS)

Vaze, J.; Chiew, Francis H. S.

2003-10-01

The estimation of urban storm water pollutant loads is required for the development of mitigation and management strategies to minimize impacts to receiving environments. Event pollutant loads are typically estimated using either regression equations or "process-based" water quality models. The relative merit of using regression models compared to process-based models is not clear. A modeling study is carried out here to evaluate the comparative ability of the regression equations and process-based water quality models to estimate event diffuse pollutant loads from impervious surfaces. The results indicate that, once calibrated, both the regression equations and the process-based model can estimate event pollutant loads satisfactorily. In fact, the loads estimated using the regression equation as a function of rainfall intensity and runoff rate are better than the loads estimated using the process-based model. Therefore, if only estimates of event loads are required, regression models should be used because they are simpler and require less data compared to process-based models.

Anammox-based technologies for nitrogen removal: Advances in process start-up and remaining issues.

PubMed

Ali, Muhammad; Okabe, Satoshi

2015-12-01

Nitrogen removal from wastewater via anaerobic ammonium oxidation (anammox)-based process has been recognized as efficient, cost-effective and low energy alternative to the conventional nitrification and denitrification processes. To date, more than one hundred full-scale anammox plants have been installed and operated for treatment of NH4(+)-rich wastewater streams around the world, and the number is increasing rapidly. Since the discovery of anammox process, extensive researches have been done to develop various anammox-based technologies. However, there are still some challenges in practical application of anammox-based treatment process at full-scale, e.g., longer start-up period, limited application to mainstream municipal wastewater and poor effluent water quality. This paper aimed to summarize recent status of application of anammox process and researches on technological development for solving these remaining problems. In addition, an integrated system of anammox-based process and microbial fuel cell is proposed for sustainable and energy-positive wastewater treatment. Copyright © 2015 Elsevier Ltd. All rights reserved.

Observer-based perturbation extremum seeking control with input constraints for direct-contact membrane distillation process

NASA Astrophysics Data System (ADS)

Eleiwi, Fadi; Laleg-Kirati, Taous Meriem

2018-06-01

An observer-based perturbation extremum seeking control is proposed for a direct-contact membrane distillation (DCMD) process. The process is described with a dynamic model that is based on a 2D advection-diffusion equation model which has pump flow rates as process inputs. The objective of the controller is to optimise the trade-off between the permeate mass flux and the energy consumption by the pumps inside the process. Cases of single and multiple control inputs are considered through the use of only the feed pump flow rate or both the feed and the permeate pump flow rates. A nonlinear Lyapunov-based observer is designed to provide an estimation for the temperature distribution all over the designated domain of the DCMD process. Moreover, control inputs are constrained with an anti-windup technique to be within feasible and physical ranges. Performance of the proposed structure is analysed, and simulations based on real DCMD process parameters for each control input are provided.

Selective aqueous extraction of organics coupled with trapping by membrane separation

DOEpatents

van Eikeren, Paul; Brose, Daniel J.; Ray, Roderick J.

1991-01-01

An improvement to processes for the selective extractation of organic solutes from organic solvents by water-based extractants is disclosed, the improvement comprising coupling various membrane separation processes with the organic extraction process, the membrane separation process being utilized to continuously recycle the water-based extractant and at the same time selectively remove or concentrate organic solute from the water-based extractant.

Application of agent-based system for bioprocess description and process improvement.

PubMed

Gao, Ying; Kipling, Katie; Glassey, Jarka; Willis, Mark; Montague, Gary; Zhou, Yuhong; Titchener-Hooker, Nigel J

2010-01-01

Modeling plays an important role in bioprocess development for design and scale-up. Predictive models can also be used in biopharmaceutical manufacturing to assist decision-making either to maintain process consistency or to identify optimal operating conditions. To predict the whole bioprocess performance, the strong interactions present in a processing sequence must be adequately modeled. Traditionally, bioprocess modeling considers process units separately, which makes it difficult to capture the interactions between units. In this work, a systematic framework is developed to analyze the bioprocesses based on a whole process understanding and considering the interactions between process operations. An agent-based approach is adopted to provide a flexible infrastructure for the necessary integration of process models. This enables the prediction of overall process behavior, which can then be applied during process development or once manufacturing has commenced, in both cases leading to the capacity for fast evaluation of process improvement options. The multi-agent system comprises a process knowledge base, process models, and a group of functional agents. In this system, agent components co-operate with each other in performing their tasks. These include the description of the whole process behavior, evaluating process operating conditions, monitoring of the operating processes, predicting critical process performance, and providing guidance to decision-making when coping with process deviations. During process development, the system can be used to evaluate the design space for process operation. During manufacture, the system can be applied to identify abnormal process operation events and then to provide suggestions as to how best to cope with the deviations. In all cases, the function of the system is to ensure an efficient manufacturing process. The implementation of the agent-based approach is illustrated via selected application scenarios, which demonstrate how such a framework may enable the better integration of process operations by providing a plant-wide process description to facilitate process improvement. Copyright 2009 American Institute of Chemical Engineers

Net-centric ACT-R-Based Cognitive Architecture with DEVS Unified Process

DTIC Science & Technology

2011-04-01

effort has been spent in analyzing various forms of requirement specifications, viz, state-based, Natural Language based, UML-based, Rule- based, BPMN ...requirement specifications in one of the chosen formats such as BPMN , DoDAF, Natural Language Processing (NLP) based, UML- based, DSL or simply

A KPI-based process monitoring and fault detection framework for large-scale processes.

PubMed

Zhang, Kai; Shardt, Yuri A W; Chen, Zhiwen; Yang, Xu; Ding, Steven X; Peng, Kaixiang

2017-05-01

Large-scale processes, consisting of multiple interconnected subprocesses, are commonly encountered in industrial systems, whose performance needs to be determined. A common approach to this problem is to use a key performance indicator (KPI)-based approach. However, the different KPI-based approaches are not developed with a coherent and consistent framework. Thus, this paper proposes a framework for KPI-based process monitoring and fault detection (PM-FD) for large-scale industrial processes, which considers the static and dynamic relationships between process and KPI variables. For the static case, a least squares-based approach is developed that provides an explicit link with least-squares regression, which gives better performance than partial least squares. For the dynamic case, using the kernel representation of each subprocess, an instrument variable is used to reduce the dynamic case to the static case. This framework is applied to the TE benchmark process and the hot strip mill rolling process. The results show that the proposed method can detect faults better than previous methods. Copyright © 2017 ISA. Published by Elsevier Ltd. All rights reserved.

Automatic and controlled components of judgment and decision making.

PubMed

Ferreira, Mario B; Garcia-Marques, Leonel; Sherman, Steven J; Sherman, Jeffrey W

2006-11-01

The categorization of inductive reasoning into largely automatic processes (heuristic reasoning) and controlled analytical processes (rule-based reasoning) put forward by dual-process approaches of judgment under uncertainty (e.g., K. E. Stanovich & R. F. West, 2000) has been primarily a matter of assumption with a scarcity of direct empirical findings supporting it. The present authors use the process dissociation procedure (L. L. Jacoby, 1991) to provide convergent evidence validating a dual-process perspective to judgment under uncertainty based on the independent contributions of heuristic and rule-based reasoning. Process dissociations based on experimental manipulation of variables were derived from the most relevant theoretical properties typically used to contrast the two forms of reasoning. These include processing goals (Experiment 1), cognitive resources (Experiment 2), priming (Experiment 3), and formal training (Experiment 4); the results consistently support the author's perspective. They conclude that judgment under uncertainty is neither an automatic nor a controlled process but that it reflects both processes, with each making independent contributions.

A midas plugin to enable construction of reproducible web-based image processing pipelines

PubMed Central

Grauer, Michael; Reynolds, Patrick; Hoogstoel, Marion; Budin, Francois; Styner, Martin A.; Oguz, Ipek

2013-01-01

Image processing is an important quantitative technique for neuroscience researchers, but difficult for those who lack experience in the field. In this paper we present a web-based platform that allows an expert to create a brain image processing pipeline, enabling execution of that pipeline even by those biomedical researchers with limited image processing knowledge. These tools are implemented as a plugin for Midas, an open-source toolkit for creating web based scientific data storage and processing platforms. Using this plugin, an image processing expert can construct a pipeline, create a web-based User Interface, manage jobs, and visualize intermediate results. Pipelines are executed on a grid computing platform using BatchMake and HTCondor. This represents a new capability for biomedical researchers and offers an innovative platform for scientific collaboration. Current tools work well, but can be inaccessible for those lacking image processing expertise. Using this plugin, researchers in collaboration with image processing experts can create workflows with reasonable default settings and streamlined user interfaces, and data can be processed easily from a lab environment without the need for a powerful desktop computer. This platform allows simplified troubleshooting, centralized maintenance, and easy data sharing with collaborators. These capabilities enable reproducible science by sharing datasets and processing pipelines between collaborators. In this paper, we present a description of this innovative Midas plugin, along with results obtained from building and executing several ITK based image processing workflows for diffusion weighted MRI (DW MRI) of rodent brain images, as well as recommendations for building automated image processing pipelines. Although the particular image processing pipelines developed were focused on rodent brain MRI, the presented plugin can be used to support any executable or script-based pipeline. PMID:24416016

A midas plugin to enable construction of reproducible web-based image processing pipelines.

PubMed

Grauer, Michael; Reynolds, Patrick; Hoogstoel, Marion; Budin, Francois; Styner, Martin A; Oguz, Ipek

2013-01-01

Image processing is an important quantitative technique for neuroscience researchers, but difficult for those who lack experience in the field. In this paper we present a web-based platform that allows an expert to create a brain image processing pipeline, enabling execution of that pipeline even by those biomedical researchers with limited image processing knowledge. These tools are implemented as a plugin for Midas, an open-source toolkit for creating web based scientific data storage and processing platforms. Using this plugin, an image processing expert can construct a pipeline, create a web-based User Interface, manage jobs, and visualize intermediate results. Pipelines are executed on a grid computing platform using BatchMake and HTCondor. This represents a new capability for biomedical researchers and offers an innovative platform for scientific collaboration. Current tools work well, but can be inaccessible for those lacking image processing expertise. Using this plugin, researchers in collaboration with image processing experts can create workflows with reasonable default settings and streamlined user interfaces, and data can be processed easily from a lab environment without the need for a powerful desktop computer. This platform allows simplified troubleshooting, centralized maintenance, and easy data sharing with collaborators. These capabilities enable reproducible science by sharing datasets and processing pipelines between collaborators. In this paper, we present a description of this innovative Midas plugin, along with results obtained from building and executing several ITK based image processing workflows for diffusion weighted MRI (DW MRI) of rodent brain images, as well as recommendations for building automated image processing pipelines. Although the particular image processing pipelines developed were focused on rodent brain MRI, the presented plugin can be used to support any executable or script-based pipeline.

Process-based costing.

PubMed

Lee, Robert H; Bott, Marjorie J; Forbes, Sarah; Redford, Linda; Swagerty, Daniel L; Taunton, Roma Lee

2003-01-01

Understanding how quality improvement affects costs is important. Unfortunately, low-cost, reliable ways of measuring direct costs are scarce. This article builds on the principles of process improvement to develop a costing strategy that meets both criteria. Process-based costing has 4 steps: developing a flowchart, estimating resource use, valuing resources, and calculating direct costs. To illustrate the technique, this article uses it to cost the care planning process in 3 long-term care facilities. We conclude that process-based costing is easy to implement; generates reliable, valid data; and allows nursing managers to assess the costs of new or modified processes.

Process evaluation of the Enabling Mothers toPrevent Pediatric Obesity Through Web-Based Learning and Reciprocal Determinism (EMPOWER) randomized control trial.

PubMed

Knowlden, Adam P; Sharma, Manoj

2014-09-01

Family-and-home-based interventions are an important vehicle for preventing childhood obesity. Systematic process evaluations have not been routinely conducted in assessment of these interventions. The purpose of this study was to plan and conduct a process evaluation of the Enabling Mothers to Prevent Pediatric Obesity Through Web-Based Learning and Reciprocal Determinism (EMPOWER) randomized control trial. The trial was composed of two web-based, mother-centered interventions for prevention of obesity in children between 4 and 6 years of age. Process evaluation used the components of program fidelity, dose delivered, dose received, context, reach, and recruitment. Categorical process evaluation data (program fidelity, dose delivered, dose exposure, and context) were assessed using Program Implementation Index (PII) values. Continuous process evaluation variables (dose satisfaction and recruitment) were assessed using ANOVA tests to evaluate mean differences between groups (experimental and control) and sessions (sessions 1 through 5). Process evaluation results found that both groups (experimental and control) were equivalent, and interventions were administered as planned. Analysis of web-based intervention process objectives requires tailoring of process evaluation models for online delivery. Dissemination of process evaluation results can advance best practices for implementing effective online health promotion programs. © 2014 Society for Public Health Education.

Supervisee Art-Based Disclosure in "El Duende" Process Painting

ERIC Educational Resources Information Center

Robb, Megan; Miller, Abbe

2017-01-01

Although art-based supervision often leads to supervisee disclosure, little is known about the experience, process, or contributions of such disclosure. We investigated the phenomenon of supervisee disclosure during "El Duende" Process Painting art-based group supervision using a qualitative study. JoHari's Window was used as a grounding…

Multi-model comparison on the effects of climate change on tree species in the eastern U.S.: results from an enhanced niche model and process-based ecosystem and landscape models

Treesearch

Louis R. Iverson; Frank R. Thompson; Stephen Matthews; Matthew Peters; Anantha Prasad; William D. Dijak; Jacob Fraser; Wen J. Wang; Brice Hanberry; Hong He; Maria Janowiak; Patricia Butler; Leslie Brandt; Chris Swanston

2016-01-01

Context. Species distribution models (SDM) establish statistical relationships between the current distribution of species and key attributes whereas process-based models simulate ecosystem and tree species dynamics based on representations of physical and biological processes. TreeAtlas, which uses DISTRIB SDM, and Linkages and LANDIS PRO, process...

Numerical Study on Wake Flow Field Characteristic of the Base-Bleed Unit under Fast Depressurization Process

NASA Astrophysics Data System (ADS)

Xue, Xiaochun; Yu, Yonggang

2017-04-01

Numerical analyses have been performed to study the influence of fast depressurization on the wake flow field of the base-bleed unit (BBU) with a secondary combustion when the base-bleed projectile is propelled out of the muzzle. Two-dimensional axisymmetric Navier-Stokes equations for a multi-component chemically reactive system is solved by Fortran program to calculate the couplings of the internal flow field and wake flow field with consideration of the combustion of the base-bleed propellant and secondary combustion effect. Based on the comparison with the experiments, the unsteady variation mechanism and secondary combustion characteristic of wake flow field under fast depressurization process is obtained numerically. The results show that in the fast depressurization process, the variation extent of the base pressure of the BBU is larger in first 0.9 ms and then decreases gradually and after 1.5 ms, it remains basically stable. The pressure and temperature of the base-bleed combustion chamber experience the decrease and pickup process. Moreover, after the pressure and temperature decrease to the lowest point, the phenomenon that the external gases are flowing back into the base-bleed combustion chamber appears. Also, with the decrease of the initial pressure, the unsteady process becomes shorter and the temperature gradient in the base-bleed combustion chamber declines under the fast depressurization process, which benefits the combustion of the base-bleed propellant.

Process Analytical Technology (PAT): batch-to-batch reproducibility of fermentation processes by robust process operational design and control.

PubMed

Gnoth, S; Jenzsch, M; Simutis, R; Lübbert, A

2007-10-31

The Process Analytical Technology (PAT) initiative of the FDA is a reaction on the increasing discrepancy between current possibilities in process supervision and control of pharmaceutical production processes and its current application in industrial manufacturing processes. With rigid approval practices based on standard operational procedures, adaptations of production reactors towards the state of the art were more or less inhibited for long years. Now PAT paves the way for continuous process and product improvements through improved process supervision based on knowledge-based data analysis, "Quality-by-Design"-concepts, and, finally, through feedback control. Examples of up-to-date implementations of this concept are presented. They are taken from one key group of processes in recombinant pharmaceutical protein manufacturing, the cultivations of genetically modified Escherichia coli bacteria.

Learning-based controller for biotechnology processing, and method of using

DOEpatents

Johnson, John A.; Stoner, Daphne L.; Larsen, Eric D.; Miller, Karen S.; Tolle, Charles R.

2004-09-14

The present invention relates to process control where some of the controllable parameters are difficult or impossible to characterize. The present invention relates to process control in biotechnology of such systems, but not limited to. Additionally, the present invention relates to process control in biotechnology minerals processing. In the inventive method, an application of the present invention manipulates a minerals bioprocess to find local exterma (maxima or minima) for selected output variables/process goals by using a learning-based controller for bioprocess oxidation of minerals during hydrometallurgical processing. The learning-based controller operates with or without human supervision and works to find processor optima without previously defined optima due to the non-characterized nature of the process being manipulated.

Lubricant base oil and wax processing. [Glossary included

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sequeira, A. Jr.

1994-01-01

This book provides state-of-the-art information on all processes currently used to manufacture lubricant base oils and waxes. It furnishes helpful lists of conversion factors, construction cost data, and process licensors, as well as a glossary of essential petroleum processing terms.

Environmental Assessment: General Plan-Based Environmental Impact Analysis Process, Laughlin Air Force Base

DTIC Science & Technology

2007-05-01

BASED ENVIROMENTAL IMPACT ANALYSIS PROCESS LAUGHLIN AIR FORCE BASE, TEXAS AGENCY: 47th Flying Training Wing (FTW), Laughlin Air Force Base (AFB), Texas...8217\\ \\ \\ \\ \\\\ \\ ~ >(- \\ , ~ AOC01 \\ PS018 / WP002 \\ DP008 // WP006 \\ ~ ,/ ’----- -----·-------------~--/·/ LAUGHLIN AIR FORCE BASE ENVIROMENTAL RESTORATION

Design and Implementation of Hydrologic Process Knowledge-base Ontology: A case study for the Infiltration Process

NASA Astrophysics Data System (ADS)

Elag, M.; Goodall, J. L.

2013-12-01

Hydrologic modeling often requires the re-use and integration of models from different disciplines to simulate complex environmental systems. Component-based modeling introduces a flexible approach for integrating physical-based processes across disciplinary boundaries. Several hydrologic-related modeling communities have adopted the component-based approach for simulating complex physical systems by integrating model components across disciplinary boundaries in a workflow. However, it is not always straightforward to create these interdisciplinary models due to the lack of sufficient knowledge about a hydrologic process. This shortcoming is a result of using informal methods for organizing and sharing information about a hydrologic process. A knowledge-based ontology provides such standards and is considered the ideal approach for overcoming this challenge. The aims of this research are to present the methodology used in analyzing the basic hydrologic domain in order to identify hydrologic processes, the ontology itself, and how the proposed ontology is integrated with the Water Resources Component (WRC) ontology. The proposed ontology standardizes the definitions of a hydrologic process, the relationships between hydrologic processes, and their associated scientific equations. The objective of the proposed Hydrologic Process (HP) Ontology is to advance the idea of creating a unified knowledge framework for components' metadata by introducing a domain-level ontology for hydrologic processes. The HP ontology is a step toward an explicit and robust domain knowledge framework that can be evolved through the contribution of domain users. Analysis of the hydrologic domain is accomplished using the Formal Concept Approach (FCA), in which the infiltration process, an important hydrologic process, is examined. Two infiltration methods, the Green-Ampt and Philip's methods, were used to demonstrate the implementation of information in the HP ontology. Furthermore, a SPARQL service is provided for semantic-based querying of the ontology.

Rethinking a Negative Event: The Affective Impact of Ruminative versus Imagery-Based Processing of Aversive Autobiographical Memories.

PubMed

Slofstra, Christien; Eisma, Maarten C; Holmes, Emily A; Bockting, Claudi L H; Nauta, Maaike H

2017-01-01

Ruminative (abstract verbal) processing during recall of aversive autobiographical memories may serve to dampen their short-term affective impact. Experimental studies indeed demonstrate that verbal processing of non-autobiographical material and positive autobiographical memories evokes weaker affective responses than imagery-based processing. In the current study, we hypothesized that abstract verbal or concrete verbal processing of an aversive autobiographical memory would result in weaker affective responses than imagery-based processing. The affective impact of abstract verbal versus concrete verbal versus imagery-based processing during recall of an aversive autobiographical memory was investigated in a non-clinical sample ( n  = 99) using both an observational and an experimental design. Observationally, it was examined whether spontaneous use of processing modes (both state and trait measures) was associated with impact of aversive autobiographical memory recall on negative and positive affect. Experimentally, the causal relation between processing modes and affective impact was investigated by manipulating the processing mode during retrieval of the same aversive autobiographical memory. Main findings were that higher levels of trait (but not state) measures of both ruminative and imagery-based processing and depressive symptomatology were positively correlated with higher levels of negative affective impact in the observational part of the study. In the experimental part, no main effect of processing modes on affective impact of autobiographical memories was found. However, a significant moderating effect of depressive symptomatology was found. Only for individuals with low levels of depressive symptomatology, concrete verbal (but not abstract verbal) processing of the aversive autobiographical memory did result in weaker affective responses, compared to imagery-based processing. These results cast doubt on the hypothesis that ruminative processing of aversive autobiographical memories serves to avoid the negative emotions evoked by such memories. Furthermore, findings suggest that depressive symptomatology is associated with the spontaneous use and the affective impact of processing modes during recall of aversive autobiographical memories. Clinical studies are needed that examine the role of processing modes during aversive autobiographical memory recall in depression, including the potential effectiveness of targeting processing modes in therapy.

A novel vortex tube-based N2-expander liquefaction process for enhancing the energy efficiency of natural gas liquefaction

NASA Astrophysics Data System (ADS)

Qyyum, Muhammad Abdul; Wei, Feng; Hussain, Arif; Ali, Wahid; Sehee, Oh; Lee, Moonyong

2017-11-01

This research work unfolds a simple, safe, and environment-friendly energy efficient novel vortex tube-based natural gas liquefaction process (LNG). A vortex tube was introduced to the popular N2-expander liquefaction process to enhance the liquefaction efficiency. The process structure and condition were modified and optimized to take a potential advantage of the vortex tube on the natural gas liquefaction cycle. Two commercial simulators ANSYS® and Aspen HYSYS® were used to investigate the application of vortex tube in the refrigeration cycle of LNG process. The Computational fluid dynamics (CFD) model was used to simulate the vortex tube with nitrogen (N2) as a working fluid. Subsequently, the results of the CFD model were embedded in the Aspen HYSYS® to validate the proposed LNG liquefaction process. The proposed natural gas liquefaction process was optimized using the knowledge-based optimization (KBO) approach. The overall energy consumption was chosen as an objective function for optimization. The performance of the proposed liquefaction process was compared with the conventional N2-expander liquefaction process. The vortex tube-based LNG process showed a significant improvement of energy efficiency by 20% in comparison with the conventional N2-expander liquefaction process. This high energy efficiency was mainly due to the isentropic expansion of the vortex tube. It turned out that the high energy efficiency of vortex tube-based process is totally dependent on the refrigerant cold fraction, operating conditions as well as refrigerant cycle configurations.

An object-oriented description method of EPMM process

NASA Astrophysics Data System (ADS)

Jiang, Zuo; Yang, Fan

2017-06-01

In order to use the object-oriented mature tools and language in software process model, make the software process model more accord with the industrial standard, it’s necessary to study the object-oriented modelling of software process. Based on the formal process definition in EPMM, considering the characteristics that Petri net is mainly formal modelling tool and combining the Petri net modelling with the object-oriented modelling idea, this paper provides this implementation method to convert EPMM based on Petri net into object models based on object-oriented description.

Automated process control for plasma etching

NASA Astrophysics Data System (ADS)

McGeown, Margaret; Arshak, Khalil I.; Murphy, Eamonn

1992-06-01

This paper discusses the development and implementation of a rule-based system which assists in providing automated process control for plasma etching. The heart of the system is to establish a correspondence between a particular data pattern -- sensor or data signals -- and one or more modes of failure, i.e., a data-driven monitoring approach. The objective of this rule based system, PLETCHSY, is to create a program combining statistical process control (SPC) and fault diagnosis to help control a manufacturing process which varies over time. This can be achieved by building a process control system (PCS) with the following characteristics. A facility to monitor the performance of the process by obtaining and analyzing the data relating to the appropriate process variables. Process sensor/status signals are input into an SPC module. If trends are present, the SPC module outputs the last seven control points, a pattern which is represented by either regression or scoring. The pattern is passed to the rule-based module. When the rule-based system recognizes a pattern, it starts the diagnostic process using the pattern. If the process is considered to be going out of control, advice is provided about actions which should be taken to bring the process back into control.

The Effects of a Web-Based Nursing Process Documentation Program on Stress and Anxiety of Nursing Students in South Korea.

PubMed

Lee, Eunjoo; Noh, Hyun Kyung

2016-01-01

To examine the effects of a web-based nursing process documentation system on the stress and anxiety of nursing students during their clinical practice. A quasi-experimental design was employed. The experimental group (n = 110) used a web-based nursing process documentation program for their case reports as part of assignments for a clinical practicum, whereas the control group (n = 106) used traditional paper-based case reports. Stress and anxiety levels were measured with a numeric rating scale before, 2 weeks after, and 4 weeks after using the web-based nursing process documentation program during a clinical practicum. The data were analyzed using descriptive statistics, t tests, chi-square tests, and repeated-measures analyses of variance. Nursing students who used the web-based nursing process documentation program showed significant lower levels of stress and anxiety than the control group. A web-based nursing process documentation program could be used to reduce the stress and anxiety of nursing students during clinical practicum, which ultimately would benefit nursing students by increasing satisfaction with and effectiveness of clinical practicum. © 2015 NANDA International, Inc.

Process-based principles for restoring river ecosystems

Treesearch

Timothy J. Beechie; David A. Sear; Julian D. Olden; George R. Pess; John M. Buffington; Hamish Moir; Philip Roni; Michael M. Pollock

2010-01-01

Process-based restoration aims to reestablish normative rates and magnitudes of physical, chemical, and biological processes that sustain river and floodplain ecosystems. Ecosystem conditions at any site are governed by hierarchical regional, watershed, and reach-scale processes controlling hydrologic and sediment regimes; floodplain and aquatic habitat...

Rule-based reasoning is fast and belief-based reasoning can be slow: Challenging current explanations of belief-bias and base-rate neglect.

PubMed

Newman, Ian R; Gibb, Maia; Thompson, Valerie A

2017-07-01

It is commonly assumed that belief-based reasoning is fast and automatic, whereas rule-based reasoning is slower and more effortful. Dual-Process theories of reasoning rely on this speed-asymmetry explanation to account for a number of reasoning phenomena, such as base-rate neglect and belief-bias. The goal of the current study was to test this hypothesis about the relative speed of belief-based and rule-based processes. Participants solved base-rate problems (Experiment 1) and conditional inferences (Experiment 2) under a challenging deadline; they then gave a second response in free time. We found that fast responses were informed by rules of probability and logical validity, and that slow responses incorporated belief-based information. Implications for Dual-Process theories and future research options for dissociating Type I and Type II processes are discussed. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

An Automated Energy Detection Algorithm Based on Morphological Filter Processing with a Modified Watershed Transform

DTIC Science & Technology

2018-01-01

ARL-TR-8270 ● JAN 2018 US Army Research Laboratory An Automated Energy Detection Algorithm Based on Morphological Filter...Automated Energy Detection Algorithm Based on Morphological Filter Processing with a Modified Watershed Transform by Kwok F Tom Sensors and Electron...1 October 2016–30 September 2017 4. TITLE AND SUBTITLE An Automated Energy Detection Algorithm Based on Morphological Filter Processing with a

The Acquisition of Integrated Science Process Skills in a Web-Based Learning Environment

ERIC Educational Resources Information Center

Saat, Rohaida Mohd

2004-01-01

Web-based learning is becoming prevalent in science learning. Some use specially designed programs, while others use materials available on the Internet. This qualitative case study examined the process of acquisition of integrated science process skills, particularly the skill of controlling variables, in a web-based learning environment among…

Process-based modeling of temperature and water profiles in the seedling recruitment zone: Part II. Seedling emergence timing

USDA-ARS?s Scientific Manuscript database

Predictions of seedling emergence timing for spring wheat are facilitated by process-based modeling of the microsite environment in the shallow seedling recruitment zone. Hourly temperature and water profiles within the recruitment zone for 60 days after planting were simulated from the process-base...

Process Writing and Communicative-Task-Based Instruction: Many Common Features, but More Common Limitations?

ERIC Educational Resources Information Center

Bruton, Anthony

2005-01-01

Process writing and communicative-task-based instruction both assume productive tasks that prompt self-expression to motivate students and as the principal engine for developing L2 proficiency in the language classroom. Besides this, process writing and communicative-task-based instruction have much else in common, despite some obvious…

Process Correlation Analysis Model for Process Improvement Identification

PubMed Central

Park, Sooyong

2014-01-01

Software process improvement aims at improving the development process of software systems. It is initiated by process assessment identifying strengths and weaknesses and based on the findings, improvement plans are developed. In general, a process reference model (e.g., CMMI) is used throughout the process of software process improvement as the base. CMMI defines a set of process areas involved in software development and what to be carried out in process areas in terms of goals and practices. Process areas and their elements (goals and practices) are often correlated due to the iterative nature of software development process. However, in the current practice, correlations of process elements are often overlooked in the development of an improvement plan, which diminishes the efficiency of the plan. This is mainly attributed to significant efforts and the lack of required expertise. In this paper, we present a process correlation analysis model that helps identify correlations of process elements from the results of process assessment. This model is defined based on CMMI and empirical data of improvement practices. We evaluate the model using industrial data. PMID:24977170

Process correlation analysis model for process improvement identification.

PubMed

Choi, Su-jin; Kim, Dae-Kyoo; Park, Sooyong

2014-01-01

Software process improvement aims at improving the development process of software systems. It is initiated by process assessment identifying strengths and weaknesses and based on the findings, improvement plans are developed. In general, a process reference model (e.g., CMMI) is used throughout the process of software process improvement as the base. CMMI defines a set of process areas involved in software development and what to be carried out in process areas in terms of goals and practices. Process areas and their elements (goals and practices) are often correlated due to the iterative nature of software development process. However, in the current practice, correlations of process elements are often overlooked in the development of an improvement plan, which diminishes the efficiency of the plan. This is mainly attributed to significant efforts and the lack of required expertise. In this paper, we present a process correlation analysis model that helps identify correlations of process elements from the results of process assessment. This model is defined based on CMMI and empirical data of improvement practices. We evaluate the model using industrial data.

Enzyme-based solutions for textile processing and dye contaminant biodegradation-a review.

PubMed

Chatha, Shahzad Ali Shahid; Asgher, Muhammad; Iqbal, Hafiz M N

2017-06-01

The textile industry, as recognized conformist and stake industry in the world's economy, is facing serious environmental challenges. In numerous industries, in practice, various chemical-based processes from initial sizing to final washing are fascinating harsh environment concerns. Some of these chemicals are corrosive to equipment and cause serious damage itself. Therefore, in the twenty-first century, chemical and allied industries quest a paradigm transition from traditional chemical-based concepts to a greener, sustainable, and environmentally friendlier catalytic alternative, both at the laboratory and industrial scales. Bio-based catalysis offers numerous benefits in the context of biotechnological industry and environmental applications. In recent years, bio-based processing has received particular interest among the scientist for inter- and multi-disciplinary investigations in the areas of natural and engineering sciences for the application in biotechnology sector at large and textile industries in particular. Different enzymatic processes such as chemical substitution have been developed or in the process of development for various textile wet processes. In this context, the present review article summarizes current developments and highlights those areas where environment-friendly enzymatic textile processing might play an increasingly important role in the textile industry. In the first part of the review, a special focus has been given to a comparative discussion of the chemical-based "classical/conventional" treatments and the modern enzyme-based treatment processes. Some relevant information is also reported to identify the major research gaps to be worked out in future.

Developing cloud-based Business Process Management (BPM): a survey

NASA Astrophysics Data System (ADS)

Mercia; Gunawan, W.; Fajar, A. N.; Alianto, H.; Inayatulloh

2018-03-01

In today’s highly competitive business environment, modern enterprises are dealing difficulties to cut unnecessary costs, eliminate wastes and delivery huge benefits for the organization. Companies are increasingly turning to a more flexible IT environment to help them realize this goal. For this reason, the article applies cloud based Business Process Management (BPM) that enables to focus on modeling, monitoring and process management. Cloud based BPM consists of business processes, business information and IT resources, which help build real-time intelligence systems, based on business management and cloud technology. Cloud computing is a paradigm that involves procuring dynamically measurable resources over the internet as an IT resource service. Cloud based BPM service enables to address common problems faced by traditional BPM, especially in promoting flexibility, event-driven business process to exploit opportunities in the marketplace.

Testing the Digital Thread in Support of Model-Based Manufacturing and Inspection

PubMed Central

Hedberg, Thomas; Lubell, Joshua; Fischer, Lyle; Maggiano, Larry; Feeney, Allison Barnard

2016-01-01

A number of manufacturing companies have reported anecdotal evidence describing the benefits of Model-Based Enterprise (MBE). Based on this evidence, major players in industry have embraced a vision to deploy MBE. In our view, the best chance of realizing this vision is the creation of a single “digital thread.” Under MBE, there exists a Model-Based Definition (MBD), created by the Engineering function, that downstream functions reuse to complete Model-Based Manufacturing and Model-Based Inspection activities. The ensemble of data that enables the combination of model-based definition, manufacturing, and inspection defines this digital thread. Such a digital thread would enable real-time design and analysis, collaborative process-flow development, automated artifact creation, and full-process traceability in a seamless real-time collaborative development among project participants. This paper documents the strengths and weaknesses in the current, industry strategies for implementing MBE. It also identifies gaps in the transition and/or exchange of data between various manufacturing processes. Lastly, this paper presents measured results from a study of model-based processes compared to drawing-based processes and provides evidence to support the anecdotal evidence and vision made by industry. PMID:27325911

On the fractal characterization of Paretian Poisson processes

NASA Astrophysics Data System (ADS)

Eliazar, Iddo I.; Sokolov, Igor M.

2012-06-01

Paretian Poisson processes are Poisson processes which are defined on the positive half-line, have maximal points, and are quantified by power-law intensities. Paretian Poisson processes are elemental in statistical physics, and are the bedrock of a host of power-law statistics ranging from Pareto's law to anomalous diffusion. In this paper we establish evenness-based fractal characterizations of Paretian Poisson processes. Considering an array of socioeconomic evenness-based measures of statistical heterogeneity, we show that: amongst the realm of Poisson processes which are defined on the positive half-line, and have maximal points, Paretian Poisson processes are the unique class of 'fractal processes' exhibiting scale-invariance. The results established in this paper are diametric to previous results asserting that the scale-invariance of Poisson processes-with respect to physical randomness-based measures of statistical heterogeneity-is characterized by exponential Poissonian intensities.

A new intuitionistic fuzzy rule-based decision-making system for an operating system process scheduler.

PubMed

Butt, Muhammad Arif; Akram, Muhammad

2016-01-01

We present a new intuitionistic fuzzy rule-based decision-making system based on intuitionistic fuzzy sets for a process scheduler of a batch operating system. Our proposed intuitionistic fuzzy scheduling algorithm, inputs the nice value and burst time of all available processes in the ready queue, intuitionistically fuzzify the input values, triggers appropriate rules of our intuitionistic fuzzy inference engine and finally calculates the dynamic priority (dp) of all the processes in the ready queue. Once the dp of every process is calculated the ready queue is sorted in decreasing order of dp of every process. The process with maximum dp value is sent to the central processing unit for execution. Finally, we show complete working of our algorithm on two different data sets and give comparisons with some standard non-preemptive process schedulers.

Reading Remediation Based on Sequential and Simultaneous Processing.

ERIC Educational Resources Information Center

Gunnison, Judy; And Others

1982-01-01

The theory postulating a dichotomy between sequential and simultaneous processing is reviewed and its implications for remediating reading problems are reviewed. Research is cited on sequential-simultaneous processing for early and advanced reading. A list of remedial strategies based on the processing dichotomy addresses decoding and lexical…

The poetics of mourning and faith-based intervention in maladaptive grieving processes in Ethiopia.

PubMed

Hussein, Jeylan Wolyie

2018-08-01

The paper is an inquiry into the poetics of mourning and faith-based intervention in maladaptive grieving processes in Ethiopia. The paper discusses the ways that loss is signified and analyzes the meanings of ethnocultural and psychospiritual practices employed to deal with maladaptive grief processes and their psychological and emotional after-effects. Hermeneutics provided the methodological framework and informed the analysis. The thesis of the paper is that the poetics of mourning and faith-based social interventions are interactionally based meaning making processes. The paper indicates the limitations of the study and their implications for further inquiry.

A Petri Net-Based Software Process Model for Developing Process-Oriented Information Systems

NASA Astrophysics Data System (ADS)

Li, Yu; Oberweis, Andreas

Aiming at increasing flexibility, efficiency, effectiveness, and transparency of information processing and resource deployment in organizations to ensure customer satisfaction and high quality of products and services, process-oriented information systems (POIS) represent a promising realization form of computerized business information systems. Due to the complexity of POIS, explicit and specialized software process models are required to guide POIS development. In this chapter we characterize POIS with an architecture framework and present a Petri net-based software process model tailored for POIS development with consideration of organizational roles. As integrated parts of the software process model, we also introduce XML nets, a variant of high-level Petri nets as basic methodology for business processes modeling, and an XML net-based software toolset providing comprehensive functionalities for POIS development.

Process-based organization design and hospital efficiency.

PubMed

Vera, Antonio; Kuntz, Ludwig

2007-01-01

The central idea of process-based organization design is that organizing a firm around core business processes leads to cost reductions and quality improvements. We investigated theoretically and empirically whether the implementation of a process-based organization design is advisable in hospitals. The data came from a database compiled by the Statistical Office of the German federal state of Rheinland-Pfalz and from a written questionnaire, which was sent to the chief executive officers (CEOs) of all 92 hospitals in this federal state. We used data envelopment analysis (DEA) to measure hospital efficiency, and factor analysis and regression analysis to test our hypothesis. Our principal finding is that a high degree of process-based organization has a moderate but significant positive effect on the efficiency of hospitals. The main implication is that hospitals should implement a process-based organization to improve their efficiency. However, to actually achieve positive effects on efficiency, it is of paramount importance to observe some implementation rules, in particular to mobilize physician participation and to create an adequate organizational culture.

Process-Based Governance in Public Administrations Using Activity-Based Costing

NASA Astrophysics Data System (ADS)

Becker, Jörg; Bergener, Philipp; Räckers, Michael

Decision- and policy-makers in public administrations currently lack on missing relevant information for sufficient governance. In Germany the introduction of New Public Management and double-entry accounting enable public administrations to get the opportunity to use cost-centered accounting mechanisms to establish new governance mechanisms. Process modelling in this case can be a useful instrument to help the public administrations decision- and policy-makers to structure their activities and capture relevant information. In combination with approaches like Activity-Based Costing, higher management level can be supported with a reasonable data base for fruitful and reasonable governance approaches. Therefore, the aim of this article is combining the public sector domain specific process modelling method PICTURE and concept of activity-based costing for supporting Public Administrations in process-based Governance.

DEVS Unified Process for Web-Centric Development and Testing of System of Systems

DTIC Science & Technology

2008-05-20

gathering from the user. Further, methodologies have been developed to generate DEVS models from BPMN /BPEL-based and message-based requirement specifications...27] 3. BPMN /BPEL based system specifications: Business Process Modeling Notation ( BPMN ) [bpm] or Business Process Execution Language (BPEL) provide a...information is stored in .wsdl and .bpel files for BPEL but in proprietary format for BPMN . 4. DoDAF-based requirement specifications: Department of

Problem Based Learning: Cognitive and Metacognitive Processes during Problem Analysis.

ERIC Educational Resources Information Center

De Grave, W. S.; And Others

1996-01-01

To investigate whether problem-based learning leads to conceptual change, the cognitive and metacognitive processes of a group of medical students were studied during the problem analysis phase, and their verbal communication and thinking processes were analyzed. Stimulated recall of the thinking process during the discussion detected a conceptual…