Plasma and urine profiles of Delta9-tetrahydrocannabinol and its metabolites 11-hydroxy-Delta9-tetrahydrocannabinol and 11-nor-9-carboxy-Delta9-tetrahydrocannabinol after cannabis smoking by male volunteers to estimate recent consumption by athletes.

PubMed

Brenneisen, Rudolf; Meyer, Pascale; Chtioui, Haithem; Saugy, Martial; Kamber, Matthias

2010-04-01

Since 2004, cannabis has been prohibited by the World Anti-Doping Agency for all sports competitions. In the years since then, about half of all positive doping cases in Switzerland have been related to cannabis consumption. In doping urine analysis, the target analyte is 11-nor-9-carboxy-Delta(9)-tetrahydrocannabinol (THC-COOH), the cutoff being 15 ng/mL. However, the wide urinary detection window of the long-term metabolite of Delta(9)-tetrahydrocannabinol (THC) does not allow a conclusion to be drawn regarding the time of consumption or the impact on the physical performance. The purpose of the present study on light cannabis smokers was to evaluate target analytes with shorter urinary excretion times. Twelve male volunteers smoked a cannabis cigarette standardized to 70 mg THC per cigarette. Plasma and urine were collected up to 8 h and 11 days, respectively. Total THC, 11-hydroxy-Delta(9)-tetrahydrocannabinol (THC-OH), and THC-COOH were determined after hydrolysis followed by solid-phase extraction and gas chromatography/mass spectrometry. The limits of quantitation were 0.1-1.0 ng/mL. Eight puffs delivered a mean THC dose of 45 mg. Plasma levels of total THC, THC-OH, and THC-COOH were measured in the ranges 0.2-59.1, 0.1-3.9, and 0.4-16.4 ng/mL, respectively. Peak concentrations were observed at 5, 5-20, and 20-180 min. Urine levels were measured in the ranges 0.1-1.3, 0.1-14.4, and 0.5-38.2 ng/mL, peaking at 2, 2, and 6-24 h, respectively. The times of the last detectable levels were 2-8, 6-96, and 48-120 h. Besides high to very high THC-COOH levels (245 +/- 1,111 ng/mL), THC (3 +/- 8 ng/mL) and THC-OH (51 +/- 246 ng/mL) were found in 65 and 98% of cannabis-positive athletes' urine samples, respectively. In conclusion, in addition to THC-COOH, the pharmacologically active THC and THC-OH should be used as target analytes for doping urine analysis. In the case of light cannabis use, this may allow the estimation of more recent consumption, probably influencing performance during competitions. However, it is not possible to discriminate the intention of cannabis use, i.e., for recreational or doping purposes. Additionally, pharmacokinetic data of female volunteers are needed to interpret cannabis-positive doping cases of female athletes.

A Ten-year Assessment of Anabolic Steroid Misuse among Competitive Athletes in Puerto Rico

PubMed Central

Acevedo, P; Jorge, JC; Cruz-Sánchez, A; Amy, E; Barreto-Estrada, JL

2012-01-01

Objective Little is known about anabolic androgenic steroids (AAS) misuse in the Caribbean region in spite of increased popularity among athletes and adolescents. The present study examines the usage of AAS among competitive athletes in Puerto Rico. Methods Doping test results of competitive athletes obtained by random sampling out of competition during the 2000–2009 period were analysed. Doping tests were executed by the Centre for Sports, Health and Exercise Sciences (Albergue Olímpico, Salinas, Puerto Rico). A total of 550 athletes were monitored during 2000–2009. Information was collected with regard to competitive sport, gender and AAS compounds whenever a positive test result was encountered. Results From the total sample of monitored cases during the past decade, 5.4% showed adverse analytical findings. Anabolic androgenic steroids misuse was detected among male (62%) and female (38%) athletes. Weightlifting showed the greatest percentage of positive AAS doping test results (70% of total cases) and stanozolol was the most commonly misused exogenous androgen (60% of abused AAS whether alone or as part of a cocktail). Testosterone was the most common endogenous misused steroid (10% of misused compounds). Conclusion In Puerto Rico, AAS misuse was detected across competitive sports for both genders. Although AAS misuse among Puerto Rican athletes shares some features that are consistent with the international sports community, it is imperative to address AAS misuse in the Caribbean region. PMID:22519228

Fast analysis of doping agents in urine by ultra-high-pressure liquid chromatography-quadrupole time-of-flight mass spectrometry. II: Confirmatory analysis.

PubMed

Badoud, F; Grata, E; Perrenoud, L; Saugy, M; Rudaz, S; Veuthey, J-L

2010-06-18

For doping control, analyses of samples are generally achieved in two steps: a rapid screening and, in the case of a positive result, a confirmatory analysis. A two-step methodology based on ultra-high-pressure liquid chromatography coupled to a quadrupole time-of-flight mass spectrometry (UHPLC-QTOF-MS) was developed to screen and confirm 103 doping agents from various classes (e.g., beta-blockers, stimulants, diuretics, and narcotics). The screening method was presented in a previous article as part I (i.e., Fast analysis of doping agents in urine by ultra-high-pressure liquid chromatography-quadrupole time-of-flight mass spectrometry. Part I: screening analysis). For the confirmatory method, basic, neutral and acidic compounds were extracted by a dedicated solid-phase extraction (SPE) in a 96-well plate format and detected by MS in the tandem mode to obtain precursor and characteristic product ions. The mass accuracy and the elemental composition of precursor and product ions were used for compound identification. After validation including matrix effect determination, the method was considered reliable to confirm suspect results without ambiguity according to the positivity criteria established by the World Anti-Doping Agency (WADA). Moreover, an isocratic method was developed to separate ephedrine from its isomer pseudoephedrine and cathine from phenylpropanolamine in a single run, what allowed their direct quantification in urine. Copyright (c) 2010 Elsevier B.V. All rights reserved.

All fiber passively Q-switched laser

DOEpatents

Soh, Daniel B. S.; Bisson, Scott E

2015-05-12

Embodiments relate to an all fiber passively Q-switched laser. The laser includes a large core doped gain fiber having a first end. The large core doped gain fiber has a first core diameter. The laser includes a doped single mode fiber (saturable absorber) having a second core diameter that is smaller than the first core diameter. The laser includes a mode transformer positioned between a second end of the large core doped gain fiber and a first end of the single mode fiber. The mode transformer has a core diameter that transitions from the first core diameter to the second core diameter and filters out light modes not supported by the doped single mode fiber. The laser includes a laser cavity formed between a first reflector positioned adjacent the large core doped gain fiber and a second reflector positioned adjacent the doped single mode fiber.

Electrical properties of aluminum-doped zinc oxide (AZO) nanoparticles synthesized by chemical vapor synthesis.

PubMed

Hartner, Sonja; Ali, Moazzam; Schulz, Christof; Winterer, Markus; Wiggers, Hartmut

2009-11-04

Aluminum-doped zinc oxide nanoparticles have been prepared by chemical vapor synthesis, which facilitates the incorporation of a higher percentage of dopant atoms, far above the thermodynamic solubility limit of aluminum. The electrical properties of aluminum-doped and undoped zinc oxide nanoparticles were investigated by impedance spectroscopy. The impedance is measured under hydrogen and synthetic air between 323 and 673 K. The measurements under hydrogen as well as under synthetic air show transport properties depending on temperature and doping level. Under hydrogen atmosphere, a decreasing conductivity with increasing dopant content is observed, which can be explained by enhanced scattering processes due to an increasing disorder in the nanocrystalline material. The temperature coefficient for the doped samples switches from positive temperature coefficient behavior to negative temperature coefficient behavior with increasing dopant concentration. In the presence of synthetic air, the conductivity firstly increases with increasing dopant content by six orders of magnitude. The origin of the increasing conductivity is the generation of free charge carriers upon dopant incorporation. It reaches its maximum at a concentration of 7.7% of aluminum, and drops for higher doping levels. In all cases, the conductivity under hydrogen is higher than under synthetic air and can be changed reversibly by changing the atmosphere.

The Prevalence and Covariates of Potential Doping Behavior in Kickboxing; Analysis among High-Level Athletes

PubMed Central

Sekulic, Damir; Zenic, Natasa; Versic, Sime; Maric, Dora; Gabrilo, Goran; Jelicic, Mario

2017-01-01

Abstract The official reports on doping behavior in kickboxing are alarming, but there have been no empirical studies that examined this problem directly. The aim of this study was to investigate the prevalence, gender differences and covariates of potential-doping-behavior, in kickboxing athletes. A total of 130 high-level kickboxing athletes (92 males, 21.37 ± 4.83 years of age, 8.39 ± 5.73 years of training experience; 38 women, 20.31 ± 2.94 years of age; 9.84 ± 4.74 years of training experience) completed questionnaires to study covariates and potential-doping behavior. The covariates were: sport factors (i.e. experience, success), doping-related factors (i.e. opinion about penalties for doping users, number of doping testing, potential-doping-behavior, etc.), sociodemographic variables, task- and ego-motivation, knowledge on sports nutrition, and knowledge on doping. Gender-based differences were established by independent t-tests, and the Mann-Whitney test. Multinomial logistic regression analyses were performed to define the relationships between covariates and a tendency toward potential-doping behavior (positive tendency – neutral – negative tendency). The potential-doping behavior was higher in those athletes who perceived kickboxing as doping contaminated sport. The more experienced kickboxers were associated with positive intention toward potential-doping behavior. Positive intention toward potential-doping behavior was lower in those who had better knowledge on sports nutrition. The task- and ego-motivation were not associated to potential-doping behavior. Because of the high potential-doping-behavior (less than 50% of athletes showed a negative tendency toward doping), and similar prevalence of potential-doping behavior between genders, this study highlights the necessity of a systematic anti-doping campaign in kickboxing. Future studies should investigate motivational variables as being potentially related to doping behavior in younger kickboxers. PMID:29134049

Positive hysteresis of Ce-doped GAGG scintillator

NASA Astrophysics Data System (ADS)

Yanagida, Takayuki; Fujimoto, Yutaka; Koshimizu, Masanori; Watanabe, Kenichi; Sato, Hiroki; Yagi, Hideki; Yanagitani, Takagimi

2014-10-01

Positive hysteresis and radiation tolerance to high-dose radiation exposure were investigated for Ce 1% and 3% doped Gd3(Al, Ga)5O12 (Ce:GAGG) crystal scintillator on comparison with other garnet scintillators such Ce:YAG, Ce:LuAG, Pr:LuAG, and ceramic Ce:GAGG. When they were irradiated by several Gy 60Co γ-rays, Ce 1% doped GAGG crystal exhibited ∼20% light yield enhancement (positive hysteresis). This is the first time to observe positive hysteresis in Ce doped GAGG. On the other hand, other garnet materials did not show the positive hysteresis and their light yields were stable after 800 Gy irradiation except Pr:LuAG. The light yield of Pr:LuAG decreased largely. When irradiated Ce:GAGG which showed positive hysteresis was evaluated in Synchrotron facility (UVSOR), new excitation band was created around 60 nm.

Synthesis, structural and optical properties of nanocrystalline vanadium doped zinc oxide aerogel

NASA Astrophysics Data System (ADS)

El Ghoul, J.; Barthou, C.; El Mir, L.

2012-06-01

We report the synthesis of vanadium-doped ZnO nanoparticles prepared by a sol-gel processing technique. In our approach, the water for hydrolysis was slowly released by esterification reaction followed by a supercritical drying in ethyl alcohol. Vanadium doping concentration of 10 at% has been investigated. After treatment in air at different temperatures, the obtained nanopowder was characterized by various techniques such as scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and photoluminescence (PL). Analysis by scanning electron microscopy at high resolution shows that the grain size increases with increasing temperature. Thus, in the case of thermal treatment at 500 °C in air, the powder with an average particle size of 25 nm shows a strong luminescence band in the visible range. The intensity and energy position of the obtained PL band depends on the temperature measurement increase. The mechanism of this emission band is discussed.

[Doping in sports. Cases reported to the Poison Control Center of Marseille from 1992 to 2000].

PubMed

Spadari, M; Coja, C; Rodor, F; Monnier, B; Affaton, M F; Arditti, J; Hayek-Lanthois, M; David, J M; Valli, M

2001-11-24

To study the doping substances used in sport and their toxicity. Retrospective analysis from January 1992 to December 2000 of the cases of use of doping substances in sport reported by telephone to the anti-poison center in Marseilles. Fifty-one cases were reported concerning 48 men and 3 women with a mean age of 30, ranging from 10 to 55 years. Sixty-three percent of cases were reported over the last four years. The sport practiced was bodybuilding, except in 2 cases (cycling in one case and running in the other). The products used were mainly anabolizing hormones (15 times), clenbuterol (14 times) and creatine (7 times). A third of cases concerned associations of substances and 19 cases presented with symptomatology. The diversity in nature and status of the substances mentioned and their association requires enhanced vigilance with regard to the use of drugs in sport. The recent measures voted within the framework of the anti-doping law dated 23/3/99 are aimed at increasing surveillance with the development of anti-doping antennae.

[Anti-doping policy development process in the sports world (1968~1999): focusing on IOC activities and passive response from Korea].

PubMed

Hwang, Eui-Ryong; Kim, Tae-Young

2014-08-01

This study investigated the anti-doping policy promoted by the IOC historical sociologically focusing on the period from 1968 to 1999. Public opinion surrounding doping control has emerged as a large amount of drug possession by athletes who had participated in the 1952 Olympics was caught, as well as following the accident where an athlete had died during the competition as a result of doping. From 1960, as many doping cases in sports games were exposed, several international organizations proclaimed fight against doping in order to seek a preventive measure. In 1961, the IOC newly established a medical commission within the organization. It was decided to implement doping control and female sex testing at the same time for all athletes who participated in the 1967 Olympics, and they were implemented from 1968 winter and summer Olympic Games. In 1971, the provisions for the tests were prescribed as mandatory on the IOC charter. From 1989, the OCT system was introduced as a measure to overcome limitations of the detection during competition period. As political problems and limitations emerged, WADA (World Anti-Doping Agency) was established in 1999 to professionally manage and push for doping control. Female sex testing policy contributed to preventing males from participating in female competition by deceiving their gender to some extent. However, it was abolished due to strong public condemnation such as women's rights issues, social stigma and pain, and gender discrimination debate. In 1984, a doping control center was established in Korea, which enabled drug use or doping in the sports world to emerge to the surface in our society. Korea Sports Council and KOC articles of association that supervise doping related matters of Korean athletes were revised in 1990. The action of inserting doping related issue in the articles of association was taken 20 years after the start of IOC doping policy. Beginning with two international competitions in the 1980s, Korean athletes experienced doping test directly, yet education about doping was limited. However, some national team level athletes tested positive on the doping test and underwent disciplinary action. In addition, athletic federation or leaders acquiesced athletes doping made secretly; this indicated that South Korea was also not free from doping. It was found that Korea world of sports showed very passive countermeasures and development process.

A comparative study of performance parameters of n(+)-p InP solar cells made by closed-ampoule sulfur diffusion into Cd- and Zn-doped p-type InP substrates

NASA Technical Reports Server (NTRS)

Faur, Mircea; Faur, Maria; Goradia, Chandra; Goradia, Manju; Thomas, Ralph D.; Brinker, David J.; Fatemi, Navid S.; Honecy, Frank S.

1991-01-01

Preliminary results indicate that Cd-doped substrates are better candidates for achieving high efficiency solar cells fabricated by closed-ampoule sulfur (S) diffusion than Zn-doped substrates. The differences in performance parameters (i.e., 14.3 percent efficiency for Cd-doped vs. 11.83 percent in the case of Zn-doped substrates of comparable doping and etch pit densities) were explained in terms of a large increase in dislocation density as a result of S diffusion in the case of Zn-doped as compared to Cd-doped substrates. The In(x)S(y) and probably Zn(S) precipitates in the case of Zn-doped substrates, produce a dead layer which extends deep below the surface and strongly affects the performance parameters. It should be noted that the cells had an unoptimized single layer antireflective coating of SiO, a grid shadowing of 6.25 percent, and somewhat poor contacts, all contributing to a reduction in efficiency. It is believed that by reducing the external losses and further improvement in cell design, efficiencies approaching 17 percent at 1 AMO, 25 degrees should be possible for cells fabricated on these relatively high defect density Cd-doped substrates. Even higher efficiencies, 18 to 19 percent should be possible by using long-lifetime substrates and further improving front surface passivation. If solar cells fabricated on Cd-doped substrates turn out to have comparable radiation tolerance as those reported in the case of cells fabricated on Zn-doped substrates, then for certain space missions 18 to 19 percent efficient cells made by this method of fabrication would be viable.

Carbon-doping-induced negative differential resistance in armchair phosphorene nanoribbons

NASA Astrophysics Data System (ADS)

Guo, Caixia; Xia, Congxin; Wang, Tianxing; Liu, Yufang

2017-03-01

By using a combined method of density functional theory and non-equilibrium Green’s function formalism, we investigate the electronic transport properties of carbon-doped armchair phosphorene nanoribbons (APNRs). The results show that C atom doping can strongly affect the electronic transport properties of the APNR and change it from semiconductor to metal. Meanwhile, obvious negative differential resistance (NDR) behaviors are obtained by tuning the doping position and concentration. In particular, with reducing doping concentration, NDR peak position can enter into mV bias range. These results provide a theoretical support to design the related nanodevice by tuning the doping position and concentration in the APNRs. Project supported by the National Natural Science Foundation of China (No. 11274096), the University Science and Technology Innovation Team Support Project of Henan Province (No. 13IRTSTHN016), the University key Science Research Project of Henan Province (No.16A140043). The calculation about this work was supported by the High Performance Computing Center of Henan Normal University.

Role of oxygen vacancies on the structure and density of states of iron-doped zirconia

NASA Astrophysics Data System (ADS)

Sangalli, Davide; Lamperti, Alessio; Cianci, Elena; Ciprian, Roberta; Perego, Michele; Debernardi, Alberto

2013-02-01

In this paper, we study the effect of iron doping in zirconia using both theoretical and experimental approaches. Combining density functional theory (DFT) simulations with the experimental characterization of thin films, we show that iron is in the Fe3+ oxidation state and, accordingly, the films are rich in oxygen vacancies (VO••). VO•• favor the formation of the tetragonal phase in doped zirconia (ZrO2:Fe) and affect the density of states at the Fermi level as well as the local magnetization of Fe atoms. We also show that the Fe(2p) and Fe(3p) energy levels can be used as a marker for the presence of vacancies in the doped system. In particular, the computed position of the Fe(3p) peak is strongly sensitive to the VO•• to Fe atoms ratio. A comparison of the theoretical and experimental Fe(3p) peak positions suggests that in our films this ratio is close to 0.5. Besides the interest in the material by itself, ZrO2:Fe constitutes a test case for the application of DFT on transition metals embedded in oxides. In ZrO2:Fe, the inclusion of the Hubbard U correction significantly changes the electronic properties of the system. However, the inclusion of this correction, at least for the value U=3.3 eV chosen in the present work, worsen the agreement with the measured photoemission valence band spectra.

A call for policy guidance on psychometric testing in doping control in sport.

PubMed

Petróczi, Andrea; Backhouse, Susan H; Barkoukis, Vassilis; Brand, Ralf; Elbe, Anne-Marie; Lazuras, Lambros; Lucidi, Fabio

2015-11-01

One of the fundamental challenges in anti-doping is identifying athletes who use, or are at risk of using, prohibited performance enhancing substances. The growing trend to employ a forensic approach to doping control aims to integrate information from social sciences (e.g., psychology of doping) into organised intelligence to protect clean sport. Beyond the foreseeable consequences of a positive identification as a doping user, this task is further complicated by the discrepancy between what constitutes a doping offence in the World Anti-Doping Code and operationalized in doping research. Whilst psychology plays an important role in developing our understanding of doping behaviour in order to inform intervention and prevention, its contribution to the array of doping diagnostic tools is still in its infancy. In both research and forensic settings, we must acknowledge that (1) socially desirable responding confounds self-reported psychometric test results and (2) that the cognitive complexity surrounding test performance means that the response-time based measures and the lie detector tests for revealing concealed life-events (e.g., doping use) are prone to produce false or non-interpretable outcomes in field settings. Differences in social-cognitive characteristics of doping behaviour that are tested at group level (doping users vs. non-users) cannot be extrapolated to individuals; nor these psychometric measures used for individual diagnostics. In this paper, we present a position statement calling for policy guidance on appropriate use of psychometric assessments in the pursuit of clean sport. We argue that, to date, both self-reported and response-time based psychometric tests for doping have been designed, tested and validated to explore how athletes feel and think about doping in order to develop a better understanding of doping behaviour, not to establish evidence for doping. A false 'positive' psychological profile for doping affects not only the individual 'clean' athlete but also their entourage, their organisation and sport itself. The proposed policy guidance aims to protect the global athletic community against social, ethical and legal consequences from potential misuse of psychological tests, including erroneous or incompetent applications as forensic diagnostic tools in both practice and research. Copyright © 2015 Elsevier B.V. All rights reserved.

The complexities of anti-doping violations: a case study of sanctioned cases in all performance levels of USA cycling

PubMed Central

Henning, April D; Dimeo, Paul

2015-01-01

The use of banned substances and techniques in sport is regulated by anti-doping rules co-ordinated by the World Anti-Doping Agency. The purposes of these rules are to protect the health of the athlete, the level playing field and what WADA refers to as the spirit of sport. In this article, we review the known cases of sanctions in USA cycling since 2001. We show that the diversity of cases expands upon the simplistic, one-dimensional understanding of doping as risky and cheating. Contrary to this paradigm, we establish a typology of cases that challenges the one size fits all approach and, more specifically, we argue that WADA should develop new policies with independent standards for amateur and masters athletes. PMID:26688790

Electrochemical supercapacitors

DOEpatents

Rudge, Andrew J.; Ferraris, John P.; Gottesfeld, Shimshon

1996-01-01

A new class of electrochemical capacitors provides in its charged state a positive electrode including an active material of a p-doped material and a negative electrode including an active material of an n-doped conducting polymer, where the p-doped and n-doped materials are separated by an electrolyte. In a preferred embodiment, the positive and negative electrode active materials are selected from conducting polymers consisting of polythiophene, polymers having an aryl group attached in the 3-position, polymers having aryl and alkyl groups independently attached in the 3- and 4-positions, and polymers synthesized from bridged dimers having polythiophene as the backbone. A preferred electrolyte is a tetraalykyl ammonium salt, such as tetramethylammonium trifluoromethane sulphonate (TMATFMS), that provides small ions that are mobile through the active material, is soluble in acetonitrile, and can be used in a variety of capacitor configurations.

Structural, electronic and magnetic properties of carbon doped boron nitride nanowire: Ab initio study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jalilian, Jaafar, E-mail: JaafarJalilian@gmail.com; Kanjouri, Faramarz, E-mail: kanjouri@khu.ac.ir

2016-11-15

Using spin-polarized density functional theory calculations, we demonstrated that carbon doped boron nitride nanowire (C-doped BNNW) has diverse electronic and magnetic properties depending on position of carbon atoms and their percentages. Our results show that only when one carbon atom is situated on the edge of the nanowire, C-doped BNNW is transformed into half-metal. The calculated electronic structure of the C-doped BNNW suggests that doping carbon can induce localized edge states around the Fermi level, and the interaction among localized edge states leads to semiconductor to half-metal transition. Overall, the bond reconstruction causes of appearance of different electronic behavior suchmore » as semiconducting, half-metallicity, nonmagnetic metallic, and ferromagnetic metallic characters. The formation energy of the system shows that when a C atom is doped on surface boron site, system is more stable than the other positions of carbon impurity. Our calculations show that C-doped BNNW may offer unique opportunities for developing nanoscale spintronic materials.« less

Cerebral Correlates of Automatic Associations Towards Performance Enhancing Substances

PubMed Central

Schindler, Sebastian; Wolff, Wanja

2015-01-01

The direct assessment of explicit attitudes toward performance enhancing substances, for example Neuroenhancement or doping in sports, can be affected by social desirability biases and cheating attempts. According to Dual Process Theories of cognition, indirect measures like the Implicit Association Test (IAT) measure automatic associations toward a topic (as opposed to explicit attitudes measured by self-report measures). Such automatic associations are thought to occur rapidly and to evade voluntary control. However, whether or not such indirect tests actually reflect automatic associations is difficult to validate. Electroencephalography (EEG) has a superior time resolution which can differentiate between highly automatic compared to more elaborate processing stages. We therefore used EEG to examine on which processing stages cortical differences between negative or positive attitudes to doping occur, and whether or not these differences can be related to BIAT scores. We tested 42 university students (31 females, 24.43 ± 3.17 years old), who were requested to complete a brief doping IAT (BIAT) on attitudes toward doping. Cerebral activity during doping BIAT completion was assessed using high-density EEG. Behaviorally, participants D-scores exhibited negative attitudes toward doping, represented by faster reaction times in the doping + dislike pairing task. Event-related potentials (ERPs) revealed earliest effects between 200 and 300 ms. Here, a relatively larger occipital positivity was found for the doping + dislike pairing task. Further, in the LPP time range between 400 and 600 ms a larger late positive potential was found for the doping + dislike pairing task over central regions. These LPP amplitude differences were successfully predicting participants' BIAT D-scores. Results indicate that event-related potentials differentiate between positive and negative doping attitudes at stages of mid-latency. However, it seems that IAT scores can be predicted only by the later occurring LPP. Our study is the first to investigate the cerebral correlates that contribute to test scores obtained in the indirect testing of automatic associations toward doping. The implications of our results for the broader NE concept are discussed in light of the conceptual similarity of doping and NE. PMID:26733914

Health Psychological Constructs as Predictors of Doping Susceptibility in Adolescent Athletes

PubMed Central

Blank, Cornelia; Schobersberger, Wolfgang; Leichtfried, Veronika; Duschek, Stefan

2016-01-01

Background Doping is a highly relevant problem in sport, even in adolescent athletes. Knowledge of the psychological factors that influence doping susceptibility in young elite athletes remains sparse. Objectives This study investigated the predictive potential of different health-psychological constructs and well-being on doping susceptibility. The main hypotheses to be tested were positive associations of fear of failure, external locus of control, and ego-oriented goal orientation as well as negative associations of confidence of success, task orientation, internal locus of control, and performance motivation with doping susceptibility. Low levels of well-being are furthermore expected to be associated with doping susceptibility. Methods Within this cross-sectional study, 1,265 Austrian junior athletes aged between 14 and 19 years responded to a paper-pencil questionnaire. Results Performance motivation was a negative, while depressive mood, self-esteem, fear of failure and ego-oriented goal orientation were positive predictors of doping susceptibility. In addition, participants who were offered performance enhancing substances in the past were particularly susceptible to doping. Conclusions The study corroborates the predictive value of classical psychological constructs in doping research, initially analyzed in view of adult athletes, also for adolescents’ doping susceptibility. PMID:28144408

Photoconductive gain and quantum efficiency of remotely doped Ge/Si quantum dot photodetectors

NASA Astrophysics Data System (ADS)

Yakimov, A. I.; Kirienko, V. V.; Armbrister, V. A.; Bloshkin, A. A.; Dvurechenskii, A. V.; Shklyaev, A. A.

2016-10-01

We study the effect of quantum dot charging on the mid-infrared photocurrent, optical gain, hole capture probability, and absorption quantum efficiency in remotely delta-doped Ge/Si quantum dot photodetectors. The dot occupation with holes is controlled by varying dot and doping densities. From our investigations of samples doped to contain from about one to nine holes per dot we observe an over 10 times gain enhancement and similar suppression of the hole capture probability with increased carrier population. The data are explained by quenching the capture process and increasing the photoexcited hole lifetime due to formation of the repulsive Coulomb potential of the extra holes inside the quantum dots. The normal incidence quantum efficiency is found to be strongly asymmetric with respect to applied bias polarity. Based on the polarization-dependent absorption measurements it is concluded that, at a positive voltage, when holes move toward the nearest δ-doping plane, photocurrent is originated from the bound-to-continuum transitions of holes between the ground state confined in Ge dots and the extended states of the Si matrix. At a negative bias polarity, the photoresponse is caused by optical excitation to a quasibound state confined near the valence band edge with subsequent tunneling to the Si valence band. In a latter case, the possibility of hole transfer into continuum states arises from the electric field generated by charge distributed between quantum dots and delta-doping planes.

The Ni and Co substitutions in iron chalcogenide single crystals

NASA Astrophysics Data System (ADS)

Bezusyy, V. L.; Gawryluk, D. J.; Malinowski, A.; Berkowski, M.; Cieplak, Marta Z.

2015-03-01

We study the ab-plane resistivity and Hall effect in Fe1-yMyTe0.65Se0.35 single crystals with M =Co or Ni, and y up to 0.2. The crystals are grown by Bridgman's method. The low-temperature Hall coefficient RH changes sign to negative for crystals with y exceeding 0.135 (Co) and 0.06 (Ni), consistent with the electron doping induced by these impurities. However, the RH remains positive for all samples at high T, suggesting that remnant hole pockets survive the doping, but the holes become localized at low T in heavily doped crystals. Superconducting transition temperature (Tc) approaches zero for y = 0.14 (Co), and 0.03 (Ni), while the resistivity at the Tc onset is only weakly affected by Co doping, but it increases strongly for the Ni. These results suggest that in case of Co impurity the Tc suppression may be attributed to electron doping. On the other hand, the Ni substitution, in addition to electron doping, induces strong localization effects at small impurity contents. Using two-band conduction model we argue that the localization of electron carriers is responsible for strong superconductivity suppression by Ni impurity. Supported by EC through the FunDMS Advanced Grant of the ERC (FP7 Ideas), by the Polish NCS Grant 2011/01/B/ST3/00462, and by the French-Polish Program PICS 2012. Performed in the laboratories co-financed by NanoFun Project POIG.02.02.00-00-025/09.

Synthesis by sol-gel process, structural and optical properties of nanoparticles of zinc oxide doped vanadium

NASA Astrophysics Data System (ADS)

El Ghoul, J.; Barthou, C.; El Mir, L.

2012-06-01

We report the elaboration of vanadium-doped ZnO nanoparticles prepared by a sol-gel processing technique. In our approach, the water for hydrolysis was slowly released by esterification reaction followed by a supercritical drying in ethyl alcohol. Vanadium doping concentration of 10 at.% has been investigated. After treatment in air at different temperatures, the obtained nanopowder was characterised by various techniques such as scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and photoluminescence (PL). Analysis by scanning electron microscopy at high resolution shows that the grain size increases with increasing temperature. Thus, in the case of thermal treatment at 500 °C in air, the powder with an average particle size of 25 nm shows a strong luminescence band in the visible range. The intensity and energy position of the obtained PL band depends on the temperature measurement increase. The mechanism of this emission band is discussed.

Cu doped diamond: Effect of charge state and defect aggregation on spin interactions in a 3d transition metal doped wide band-gap semiconductor

NASA Astrophysics Data System (ADS)

Benecha, E. M.; Lombardi, E. B.

2018-05-01

We present a first principles study of Cu in diamond using DFT+U electronic structure methods, by carefully considering the impact of co-doping, charge state, and Fermi level position on its stability, lattice location, spin states, and electronic properties. We show that the energetic stability and spin states of Cu are strongly dependent on the Fermi level position and the type of diamond co-doping, with Cu being energetically more favorable in n-type or p-type co-doped diamond compared to intrinsic diamond. Since Cu has been predicted to order magnetically in a number of other wide band-gap semiconductors, we have also evaluated this possibility for Cu doped diamond. We show that while Cu exhibits strong spin interactions at specific interatomic separations in diamond, a detailed consideration of the impact of Fermi level position and Cu aggregation precludes magnetic ordering, with Cu forming non-magnetic, antiferromagnetic, or paramagnetic clusters. These results have important implications in the understanding of the properties of transition metal dopants in diamond for device applications.

The use of performance-enhancing substances (doping) by athletes in Saudi Arabia

PubMed Central

Al Ghobain, Mohammed

2017-01-01

BACKGROUND: Data on doping violation in Saudi Arabia are scarce. Our aim was to investigate the Saudi experience of anti-doping and review all positive samples and adverse analytical findings (AAFs) of Saudi athletes. MATERIALS AND METHODS: This study analyzed databases of the Saudi Arabian Anti-Doping Committee from 2008 to May 2016. The samples originated from various sporting events and were collected in and outside sport competitions. The substances investigated were those included in the annual lists of prohibited substances produced by the World Anti-Doping Agency (WADA). All urine samples were tested in laboratories accredited by the WADA. Samples were declared positive if they contained any prohibited substance on the WADA list for that year. RESULTS: In 4482 urine samples tested, 141 positive samples (3.1%) and 195 AAFs of prohibited substances were detected. The prevalence of positive samples was highest in 2012 (6.6%) and lowest in 2015 (1%). The most prevalent prohibited substances detected were anabolic steroids (32.8%) and stimulants (27.6%). The most frequently detected compounds were amphetamines (22%) and tetrahydrocannabinol (12.8%). The highest prevalence of AAFs was in bodybuilders. CONCLUSION: The prevalence of doping in Saudi Arabia seems to be higher than western countries, but this needs to be confirmed with further research. PMID:28932159

The use of performance-enhancing substances (doping) by athletes in Saudi Arabia.

PubMed

Al Ghobain, Mohammed

2017-01-01

Data on doping violation in Saudi Arabia are scarce. Our aim was to investigate the Saudi experience of anti-doping and review all positive samples and adverse analytical findings (AAFs) of Saudi athletes. This study analyzed databases of the Saudi Arabian Anti-Doping Committee from 2008 to May 2016. The samples originated from various sporting events and were collected in and outside sport competitions. The substances investigated were those included in the annual lists of prohibited substances produced by the World Anti-Doping Agency (WADA). All urine samples were tested in laboratories accredited by the WADA. Samples were declared positive if they contained any prohibited substance on the WADA list for that year. In 4482 urine samples tested, 141 positive samples (3.1%) and 195 AAFs of prohibited substances were detected. The prevalence of positive samples was highest in 2012 (6.6%) and lowest in 2015 (1%). The most prevalent prohibited substances detected were anabolic steroids (32.8%) and stimulants (27.6%). The most frequently detected compounds were amphetamines (22%) and tetrahydrocannabinol (12.8%). The highest prevalence of AAFs was in bodybuilders. The prevalence of doping in Saudi Arabia seems to be higher than western countries, but this needs to be confirmed with further research.

Can We Better Integrate the Role of Anti-Doping in Sports and Society? A Psychological Approach to Contemporary Value-Based Prevention.

PubMed

Petróczi, Andrea; Norman, Paul; Brueckner, Sebastian

2017-01-01

In sport, a wide array of substances with established or putative performance-enhancing properties is used. Most substances are fully acceptable, whilst a defined set, revised annually, is prohibited; thus, using any of these prohibited substances is declared as cheating. In the increasingly tolerant culture of pharmacological and technical human enhancements, the traditional normative approach to anti-doping, which involves telling athletes what they cannot do to improve their athletic ability and performance, diverges from the otherwise positive values attached to human improvement and enhancement in society. Today, doping is the epitome of conflicting normative expectations about the goal (performance enhancement) and the means by which the goal is achieved (use of drugs). Owing to this moral-functional duality, addressing motivations for doping avoidance at the community level is necessary, but not sufficient, for effective doping prevention. Relevant and meaningful anti-doping must also recognise and respect the values of those affected, and consolidate them with the values underpinning structural, community level anti-doping. Effective anti-doping efforts are pragmatic, positive, preventive, and proactive. They acknowledge the progressive nature of how a "performance mindset" forms in parallel with the career transition to elite level, encompasses all levels and abilities, and directly addresses the reasons behind doping use with tangible solutions. For genuine integration into sport and society, anti-doping should consistently engage athletes and other stakeholders in developing positive preventive strategies to ensure that anti-doping education not only focuses on the intrinsic values associated with the spirit of sport but also recognises the values attached to performance enhancement, addresses the pressures athletes are under, and meets their needs for practical solutions to avoid doping. Organisations involved in anti- doping should avoid the image of "controlling" but, instead, work in partnerships with all stakeholders to involve and ensure integration of the targeted individuals in global community-based preventive interventions. © 2017 S. Karger AG, Basel.

Valley-orbit splitting in doped nanocrystalline silicon: k•p calculations

NASA Astrophysics Data System (ADS)

Belyakov, Vladimir A.; Burdov, Vladimir A.

2007-07-01

The valley-orbit splitting in silicon quantum dots with shallow donors has been theoretically studied. In particular, the chemical-shift calculation was carried out within the frames of k•p approximation for single- and many-donor cases. For both cases, the great value of the chemical shift has been obtained compared to its bulk value. Such increase of the chemical shift becomes possible due to the quantum confinement effect in a dot. It is shown for the single-donor case that the level splitting and chemical shift strongly depend on the dot radius and donor position inside the nanocrystal. In the many-donor case, the chemical shift is almost proportional to the number of donors.

Determination of theoretical capacity of metal ion-doped LiMn 2O 4 as the positive electrode in Li-ion batteries

NASA Astrophysics Data System (ADS)

Todorov, Yanko M.; Hideshima, Yasufumi; Noguchi, Hideyuki; Yoshio, Masaki

The theoretical capacity and cation vacancy of metal ion (M)-doped LiMn 2- xM xO 4 spinel compounds serving as positive electrodes in a 4-V lithium ion batteries are calculated. The capacity depends strongly on the mole fraction of doped metal ion and vacancies. The theoretical capacity increases with increasing oxidation number of the doped metal ion in the 16d site of LiMn 2O 4 at the same doping fraction. The validity of the proposed equation for calculation of the capacity has been initially confirmed using a metal ion with well-known valence, such as the Al ion. The oxidation state of Co, Ni and Cr ions in the spinel structure is found to be trivalent, divalent and trivalent, respectively. Analysis shows that metal ion-doped spinel compounds with low vacancy content promote high capacity.

Influence of Dopants in ZnO Films on Defects

NASA Astrophysics Data System (ADS)

Peng, Cheng-Xiao; Weng, Hui-Min; Zhang, Yang; Ma, Xing-Ping; Ye, Bang-Jiao

2008-12-01

The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet SAl > Sun > SAg for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.

ACCEPTOR DOPANTS FOR LEAD TELLURIDE

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCaldin, J.O.

1961-12-01

Alternative P-type dopants such as, Th, P, and As were studied. Ingots were grown from a melt containing one at.% dopant and their electrical properties evaluated. Also, sintered pellets of PbTe were doped by exposure at high temperature to gaseous dopants. In most cases, the doping concentrations obtained were insufficient for SNAP 10A requirements. In the case of As, however, doping of Te-rich PbTe, the desired heavy doping was obtained. These preliminary studies suggest that dopants other than Na might be suitable for SNAP 10A requirements. (auth)

Application of the Athlete's Performance Passport for Doping Control: A Case Report.

PubMed

Iljukov, Sergei; Bermon, Stephane; Schumacher, Yorck O

2018-01-01

The efficient use of testing resources is a key issue in the fight against doping. The longitudinal tracking of sporting performances to identify unusual improvements possibly caused by doping, so-called "athlete's performance passport" (APP) is a new concept to improve targeted anti-doping testing. In fact, unusual performances by an athlete would trigger a more thorough testing program. In the present case report, performance data is modeled using the critical power concept for a group of athletes based on their past performances. By these means, an athlete with unusual deviations from his predicted performances was identified. Subsequent target testing using blood testing and the athlete biological passport resulted in an anti-doping rule violation procedure and suspension of the athlete. This case demonstrates the feasibility of the APP approach where athlete's performance is monitored and might serve as an example for the practical implementation of the method.

Application of the Athlete's Performance Passport for Doping Control: A Case Report

PubMed Central

Iljukov, Sergei; Bermon, Stephane; Schumacher, Yorck O.

2018-01-01

The efficient use of testing resources is a key issue in the fight against doping. The longitudinal tracking of sporting performances to identify unusual improvements possibly caused by doping, so-called “athlete's performance passport” (APP) is a new concept to improve targeted anti-doping testing. In fact, unusual performances by an athlete would trigger a more thorough testing program. In the present case report, performance data is modeled using the critical power concept for a group of athletes based on their past performances. By these means, an athlete with unusual deviations from his predicted performances was identified. Subsequent target testing using blood testing and the athlete biological passport resulted in an anti-doping rule violation procedure and suspension of the athlete. This case demonstrates the feasibility of the APP approach where athlete's performance is monitored and might serve as an example for the practical implementation of the method. PMID:29651247

Doping in sport: an analysis of sanctioned UK rugby union players between 2009 and 2015.

PubMed

Whitaker, L; Backhouse, S

2017-08-01

To inform anti-doping policy and practice, it is important to understand the complexities of doping. The purpose of this study was to collate and systematically examine the reasoned decisions published by UK Anti-Doping for doping sanctions in rugby union in the UK since the introduction of the 2009 World Anti-Doping Code. Case files were content analysed to extract demographic information and details relating to the anti-doping rule violation (ADRV), including individuals' explanations for how/why the ADRV occurred. Between 2009 and 2015, 49 rugby union players and one coach from across the UK were sanctioned. Over 50% of the cases involved players under the age of 25, competing at sub-elite levels. Reasons in defence of the ADRV focused on functional use and lifestyle factors rather than performance enhancement. An a priori assessment of the "need", "risk" and "consequence" of using a substance was not commonplace; further strengthening calls for increasing the reach of anti-doping education. The findings also deconstruct the view that "doped" athletes are the same. Consequently, deepening understanding of the social and cultural conditions that encourage doping remains a priority.

Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pooth, Alexander, E-mail: a.pooth@bristol.ac.uk; IQE; Uren, Michael J.

2015-12-07

Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs.

THz emission of donor and acceptor doped GaAs/AlGaAs quantum well structures with inserted thin AlAs monolayer

NASA Astrophysics Data System (ADS)

van Dommelen, Paphavee; Daengngam, Chalongrat; Kalasuwan, Pruet

2018-04-01

In this paper, we explore THz range optical intersubband transition energies in a donor doped quantum well of a GaAs/AlGaAs system as a function of the insertion position of an AlAs monolayer in the GaAs quantum well. In simulated models, the optical transition energies between electron subband levels 1 and 2 were higher in the doped structure than in the undoped structure. This may be because the envelope wave function of the second electron subband strongly overlapped the envelope wave function of the first electron subband and influenced the optical intersubband transition between the two levels in the THz range. At different levels of bias voltage at the Schottky barrier on the donor doped structure, the electric field in the growth direction of the structure linearly increased the further away the AlAs monolayer was placed from the reference position. We also simulated the optical transition energies between acceptor energy levels of the acceptor doped structure as a function of the insertion position of the AlAs monolayer. The acceptor doped structure induced THz range emission whereas the undoped structure induced mid-IR emission.

Systematics of the temperature-dependent interplane resistivity in Ba(Fe 1-xM x)₂As₂ (M=Co, Rh, Ni, and Pd)

DOE PAGES

Tanatar, M. A.; Ni, N.; Thaler, A.; ...

2011-07-27

Temperature-dependent interplane resistivity ρ c(T) was measured systematically as a function of transition-metal substitution in the iron-arsenide superconductors Ba(Fe 1-xM x)₂As₂, M=Ni, Pd, Rh. The data are compared with the behavior found in Ba(Fe 1-xCo x)₂As₂, revealing resistive signatures of pseudogap. In all compounds we find resistivity crossover at a characteristic pseudogap temperature T* from nonmetallic to metallic temperature dependence on cooling. Suppression of T* proceeds very similarly in cases of Ni and Pd doping and much faster than in similar cases of Co and Rh doping. In cases of Co and Rh doping an additional minimum in the temperature-dependentmore » ρ c emerges for high dopings, when superconductivity is completely suppressed. These features are consistent with the existence of a charge gap covering part of the Fermi surface. The part of the Fermi surface affected by this gap is notably larger for Ni- and Pd-doped compositions than in Co- and Rh-doped compounds.« less

Structural characteristics of Mg-doped (1-x)(K0.5Na0.5)NbO3-xLiSbO3 lead-free ceramics as revealed by Raman spectroscopy

NASA Astrophysics Data System (ADS)

Zhu, W. L.; Zhu, J. L.; Meng, Y.; Wang, M. S.; Zhu, B.; Zhu, X. H.; Zhu, J. G.; Xiao, D. Q.; Pezzotti, G.

2011-12-01

This paper presents a Raman spectroscopic study of compositional-change-induced structure variation and of the related mechanism of Mg doping in LiSbO3 (LS)-modified (K0.5Na0.5)NbO3 (KNN) ceramics. With increasing LS content from 0 to 0.06, a discontinuous shift towards higher wavenumbers was found for the band position of the A1g(v1) stretching mode of KNN, accompanied by a clearly nonlinear broadening of this band and a decrease in its intensity. Such morphological changes in the Raman spectrum result from two factors: (i) changes in polarizability/binding strength of the O-Nb-O vibration upon incorporation of Li ions in the KNN perovskitic structure and (ii) a polymorphic phase transition (PPT) from orthorhombic to tetragonal (O → T) phase at x > 0.04. Upon increasing the amount, w, of Mg dopant incorporated into the (1-x)KNN-xLS ceramic structure, the intensity of the Raman bands are enhanced, while the peak position and the full width at half maximum of the A1g(v1) mode was found to experience a clear dependence on both w and x. Raman characterization revealed that the mechanism of Mg doping is strongly correlated with the concentration of Li in the perovskite structure: Mg2+ ions will preferentially replace Li+ ions for low Mg doping while replace K/Na ions for higher doping of Mg. The PPT O → T was also found to be altered by the introduction of Mg and the critical value of LS concentration, xO-T, for incipient O → T transition in the KNN-xLS-wMT system was strongly dependent on Mg content, with xO → T being roughly equal to 0.04 + 2w, for the case of dilute Mg alloying.

Silver-doped manganese dioxide and trioxide nanoparticles inhibit both gram positive and gram negative pathogenic bacteria.

PubMed

Kunkalekar, R K; Prabhu, M S; Naik, M M; Salker, A V

2014-01-01

Palladium, ruthenium and silver-doped MnO2 and silver doped Mn2O3 nanoparticles were synthesized by simple co-precipitation technique. SEM-TEM analysis revealed the nano-size of these synthesized samples. XPS data illustrates that Mn is present in 4+ and 3+ oxidation states in MnO2 and Mn2O3 respectively. Thermal analysis gave significant evidence for the phase changes with increasing temperature. Antibacterial activity of these synthesized nanoparticles on three Gram positive bacterial cultures (Staphylococcus aureus ATCC 6538, Streptococcus epidermis ATCC 12228, Bacillus subtilis ATCC 6633) and three Gram negative cultures (Escherichia coli ATCC 8739, Salmonella abony NCTC 6017 and Klebsiella pneumoniae ATCC 1003) was investigated using a disc diffusion method and live/dead assay. Only Ag-doped MnO2 and Ag-doped Mn2O3 nanoparticles showed antibacterial property against all six-test bacteria but Ag-doped MnO2 was found to be more effective than Ag-doped Mn2O3. Copyright © 2013 Elsevier B.V. All rights reserved.

Semiconductor P-I-N detector

DOEpatents

Sudharsanan, Rengarajan; Karam, Nasser H.

2001-01-01

A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

Potassium-doped n-type bilayer graphene

NASA Astrophysics Data System (ADS)

Yamada, Takatoshi; Okigawa, Yuki; Hasegawa, Masataka

2018-01-01

Potassium-doped n-type bilayer graphene was obtained. Chemical vapor deposited bilayer and single layer graphene on copper (Cu) foils were used. After etching of Cu foils, graphene was dipped in potassium hydroxide aqueous solutions to dope potassium. Graphene on silicon oxide was characterized by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), and Raman spectroscopy. Both XPS and EDX spectra indicated potassium incorporation into the bilayer graphene via intercalation between the graphene sheets. The downward shift of the 2D peak position of bilayer graphene after the potassium hydroxide (KOH) treatment was confirmed in Raman spectra, indicating that the KOH-treated bilayer graphene was doped with electrons. Electrical properties were measured using Hall bar structures. The Dirac points of bilayer graphene were shifted from positive to negative by the KOH treatment, indicating that the KOH-treated bilayer graphene was n-type conduction. For single layer graphene after the KOH treatment, although electron doping was confirmed from Raman spectra, the peak of potassium in the X-ray photoelectron spectroscopy (XPS) spectrum was not detected. The Dirac points of single layer graphene with and without the KOH treatment showed positive.

Linking Narcissism, Motivation, and Doping Attitudes in Sport: A Multilevel Investigation Involving Coaches and Athletes.

PubMed

Matosic, Doris; Ntoumanis, Nikos; Boardley, Ian David; Stenling, Andreas; Sedikides, Constantine

2016-12-01

Research on coaching (Bartholomew, Ntoumanis, & Thøgersen-Ntoumani, 2009) has shown that coaches can display controlling behaviors that have detrimental effects on athletes' basic psychological needs and quality of sport experiences. The current study extends this literature by considering coach narcissism as a potential antecedent of coaches' controlling behaviors. Further, the study tests a model linking coaches' (n = 59) own reports of narcissistic tendencies with athletes' (n = 493) perceptions of coach controlling behaviors, experiences of need frustration, and attitudes toward doping. Multilevel path analysis revealed that coach narcissism was directly and positively associated with athletes' perceptions of controlling behaviors and was indirectly and positively associated with athletes' reports of needs frustration. In addition, athletes' perceptions of coach behaviors were positively associated-directly and indirectly-with attitudes toward doping. The findings advance understanding of controlling coach behaviors, their potential antecedents, and their associations with athletes' attitudes toward doping.

Temperature dependence of nonlinear optical properties in Li doped nano-carbon bowl material

NASA Astrophysics Data System (ADS)

Li, Wei-qi; Zhou, Xin; Chang, Ying; Quan Tian, Wei; Sun, Xiu-Dong

2013-04-01

The mechanism for change of nonlinear optical (NLO) properties with temperature is proposed for a nonlinear optical material, Li doped curved nano-carbon bowl. Four stable conformations of Li doped corannulene were located and their electronic properties were investigated in detail. The NLO response of those Li doped conformations varies with relative position of doping agent on the curved carbon surface of corannulene. Conversion among those Li doped conformations, which could be controlled by temperature, changes the NLO response of bulk material. Thus, conformation change of alkali metal doped carbon nano-material with temperature rationalizes the variation of NLO properties of those materials.

[Doping and urologic tumors].

PubMed

Pinto, F; Sacco, E; Volpe, A; Gardi, M; Totaro, A; Calarco, A; Racioppi, M; Gulino, G; D'Addessi, A; Bassi, P F

2010-01-01

Several substances such as growth hormone (GH), erythropoietin (Epo), and anabolic steroids (AS) are improperly utilized to increase the performance of athletes. Evaluating the potential cancer risk associated with doping agents is difficult since these drugs are often used at very high doses and in combination with other licit or illicit drugs. The GH, via its mediator, the insulin-like growth factor 1 (IGF-1), is involved in the development and progression of cancer. Animal studies suggested that high levels of GH/IGF-1 increase progression of androgen-independent prostate cancer. Clinical data regarding prostate cancer are mostly based on epidemiological studies or indirect data such as IGF-1 high levels in patients with prostate cancer. Even if experimental studies showed a correlation between Epo and cancer, no clinical data are currently available on cancer development related to Epo as a doping agent. Androgens are involved in prostate carcinogenesis modulating genes that regulate cell proliferation, apoptosis and angiogenesis. Most information on AS is anecdotal (case reports on prostate, kidney and testicular cancers). Prospective epidemiologic studies failed to support the hypothesis that circulating androgens are positively associated with prostate cancer risk. Currently, clinical and epidemiological studies supporting association between doping and urological neoplasias are not available. Nowadays, exposure to doping agents starts more prematurely with a consequent longer exposition period; drugs are often used at very high doses and in combination with other licit or illicit drugs. Due to all these elements it is impossible to predict all the side effects, including cancer; more detailed studies are therefore necessary.

Chlorine Incorporation in the CH3NH3PbI3 Perovskite: Small Concentration, Big Effect.

PubMed

Quarti, Claudio; Mosconi, Edoardo; Umari, Paolo; De Angelis, Filippo

2017-01-03

The role of chlorine doping in CH 3 NH 3 PbI 3 represents an important open issue in the use of hybrid perovskites for photovoltaic applications. In particular, even if a positive role of chlorine doping on perovskite film formation and on material morphology has been demonstrated, an inherent positive effect on the electronic and photovoltaic properties cannot be excluded. Here we carried out periodic density functional theory and Car-Parrinello molecular dynamics simulations, going down to ∼1% doping, to investigate the effect of chlorine on CH 3 NH 3 PbI 3 . We found that such a small doping has important effects on the dynamics of the crystalline structure, both with respect to the inorganic framework and with respect to the cation libration motion. Together, we observe a dynamic spatial localization of the valence and conduction states in separated spatial material regions, which takes place in the 10 -1 ps time scale and which could be the key to ease of exciton dissociation and, likely, to small charge recombination in hybrid perovskites. Moreover, such localization is enhanced by chlorine doping, demonstrating an inherent positive role of chlorine doping on the electronic properties of this class of materials.

[Forensic-medical diagnostics of doping cases in sports].

PubMed

Khodasevich, L S; Kuzin, S G; Khodasevich, A L

2013-01-01

The present review of the literature is focused on the problem of forensic-medical diagnostics of doping cases in sports, with special reference to the main classes of pharmaceutical products forbidden for use by the International Olympic Committee. The main causes of death among the athletes as a result of using doping substances are considered. Much attention is given to adverse reactions induced by long-time intake of anabolic steroids many of which can be identified at autopsy.

Site-selective substitutional doping with atomic precision on stepped Al (111) surface by single-atom manipulation

PubMed Central

2014-01-01

In fabrication of nano- and quantum devices, it is sometimes critical to position individual dopants at certain sites precisely to obtain the specific or enhanced functionalities. With first-principles simulations, we propose a method for substitutional doping of individual atom at a certain position on a stepped metal surface by single-atom manipulation. A selected atom at the step of Al (111) surface could be extracted vertically with an Al trimer-apex tip, and then the dopant atom will be positioned to this site. The details of the entire process including potential energy curves are given, which suggests the reliability of the proposed single-atom doping method. PMID:24899871

Site-selective substitutional doping with atomic precision on stepped Al (111) surface by single-atom manipulation.

PubMed

Chen, Chang; Zhang, Jinhu; Dong, Guofeng; Shao, Hezhu; Ning, Bo-Yuan; Zhao, Li; Ning, Xi-Jing; Zhuang, Jun

2014-01-01

In fabrication of nano- and quantum devices, it is sometimes critical to position individual dopants at certain sites precisely to obtain the specific or enhanced functionalities. With first-principles simulations, we propose a method for substitutional doping of individual atom at a certain position on a stepped metal surface by single-atom manipulation. A selected atom at the step of Al (111) surface could be extracted vertically with an Al trimer-apex tip, and then the dopant atom will be positioned to this site. The details of the entire process including potential energy curves are given, which suggests the reliability of the proposed single-atom doping method.

Doping in Two Elite Athletics Competitions Assessed by Randomized-Response Surveys.

PubMed

Ulrich, Rolf; Pope, Harrison G; Cléret, Léa; Petróczi, Andrea; Nepusz, Tamás; Schaffer, Jay; Kanayama, Gen; Comstock, R Dawn; Simon, Perikles

2018-01-01

Doping in sports compromises fair play and endangers health. To deter doping among elite athletes, the World Anti-Doping Agency (WADA) oversees testing of several hundred thousand athletic blood and urine samples annually, of which 1-2% test positive. Measures using the Athlete Biological Passport suggest a higher mean prevalence of about 14% positive tests. Biological testing, however, likely fails to detect many cutting-edge doping techniques, and thus the true prevalence of doping remains unknown. We surveyed 2167 athletes at two sporting events: the 13th International Association of Athletics Federations Word Championships in Athletics (WCA) in Daegu, South Korea in August 2011 and the 12th Quadrennial Pan-Arab Games (PAG) in Doha, Qatar in December 2011. To estimate the prevalence of doping, we utilized a "randomized response technique," which guarantees anonymity for individuals when answering a sensitive question. We also administered a control question at PAG assessing past-year use of supplements. The estimated prevalence of past-year doping was 43.6% (95% confidence interval 39.4-47.9) at WCA and 57.1% (52.4-61.8) at PAG. The estimated prevalence of past-year supplement use at PAG was 70.1% (65.6-74.7%). Sensitivity analyses, assessing the robustness of these estimates under numerous hypothetical scenarios of intentional or unintentional noncompliance by respondents, suggested that we were unlikely to have overestimated the true prevalence of doping. Doping appears remarkably widespread among elite athletes, and remains largely unchecked despite current biological testing. The survey technique presented here will allow future investigators to generate continued reference estimates of the prevalence of doping.

Doping and Performance Enhancing Drug Use in Athletes Living in Sivas, Mid-Anatolia: A Brief Report

PubMed Central

Özdemir, Levent; Nur, Naim; Bagcivan, Ihsan; Bulut, Okay; Sümer, Haldun; Tezeren, Gündüz

2005-01-01

The aim of this study was to determine the rate of doping and performance enhancing drug use in athletes in Sivas, Turkey, and to analyze the main reasons for the use. This was a cross-sectional study based on a self-report questionnaire. The subjects filled the questionnaires under the supervision of the investigators during interviews. This questionnaire included 24 items describing the population in terms of demographics, sport practice, doping in sport and substance use. Moreover, we assessed the frequency of doping drug use. The number of respondents was 883, of which 433 athletes and 450 healthy non-athletes (control group). The mean age of the total volunteers was 21.8 ± 3.7 yrs. The male and female ratios were 78.2% and 21.8% respectively. Doping and performance enhancing drug usage rate was 8.0% (71cases in 883 subjects). Doping drug use among the athletes was significantly (p < 0.05) higher (14.5%) compared with the non-athletes (1.8%). The agents used were anabolic steroids in 60.5%, l-carnitene in 12.7%, erythropoietin in 5.4%, Na-bicarbonate in 11.3% and creatinine in 14.1% of 71 cases. The reasons for doping use were to have a better body condition in 34 cases (47.9%) and to solve weight (gaining or loosing) problems in 8 (11.3%) cases. Since the potential side effects of doping drugs are not satisfactorily familiar to the most users, the education of athletes on the matter must be a top priority. Key Points Doping and performance enhancing drug use was 71 (8.0%) in 883 subjects, and it was significantly higher (14.5%) in the athletes compared with the non-athletes (1.8%) in Sivas, Turkey. The rate of athletes who experienced such drugs at least once in their life was 29.0%. The 52.4% of doping and performance enhancing drug users accepted that they were unaware of the drugs full and/or potential side effects. PMID:24453528

Alternative medicine and doping in sports.

PubMed

Koh, Benjamin; Freeman, Lynne; Zaslawski, Christopher

2012-01-01

Athletes are high achievers who may seek creative or unconventional methods to improve performance. The literature indicates that athletes are among the heaviest users of complementary and alternative medicine (CAM) and thus may pioneer population trends in CAM use. Unlike non-athletes, athletes may use CAM not just for prevention, treatment or rehabilitation from illness or injuries, but also for performance enhancement. Assuming that athletes' creative use of anything unconventional is aimed at "legally" improving performance, CAM may be used because it is perceived as more "natural" and erroneously assumed as not potentially doping. This failure to recognise CAMs as pharmacological agents puts athletes at risk of inadvertent doping.The general position of the World Anti-Doping Authority (WADA) is one of strict liability, an application of the legal proposition that ignorance is no excuse and the ultimate responsibility is on the athlete to ensure at all times whatever is swallowed, injected or applied to the athlete is both safe and legal for use. This means that a violation occurs whether or not the athlete intentionally or unintentionally, knowingly or unknowingly, used a prohibited substance/method or was negligent or otherwise at fault. Athletes are therefore expected to understand not only what is prohibited, but also what might potentially cause an inadvertent doping violation. Yet, as will be discussed, athlete knowledge on doping is deficient and WADA itself sometimes changes its position on prohibited methods or substances. The situation is further confounded by the conflicting stance of anti-doping experts in the media. These highly publicised disagreements may further portray inconsistencies in anti-doping guidelines and suggest to athletes that what is considered doping is dependent on the dominant political zeitgeist. Taken together, athletes may believe that unless a specific and explicit ruling is made, guidelines are open to interpretation. Therefore doping risk-taking behaviours may occur because of the potential financial, social and performance gains and the optimistically biased interpretation (that trying alternatives is part of the "spirit of sport") and doping risk-taking behaviours may occur.This discussion paper seeks to situate the reader in a world where elite level sports and CAM intersects. It posits that an understanding of the underlying motivation for CAM use and doping is currently lacking and that anti-doping rules need to be repositioned in the context of the emerging phenomenon and prevalence of CAM use.

Possible superconductivity in Sr₂IrO₄ probed by quasiparticle interference.

PubMed

Gao, Yi; Zhou, Tao; Huang, Huaixiang; Wang, Qiang-Hua

2015-03-18

Based on the possible superconducting (SC) pairing symmetries recently proposed, the quasiparticle interference (QPI) patterns in electron- and hole-doped Sr₂IrO₄ are theoretically investigated. In the electron-doped case, the QPI spectra can be explained based on a model similar to the octet model of the cuprates while in the hole-doped case, both the Fermi surface topology and the sign of the SC order parameter resemble those of the iron pnictides and there exists a QPI vector resulting from the interpocket scattering between the electron and hole pockets. In both cases, the evolution of the QPI vectors with energy and their behaviors in the nonmagnetic and magnetic impurity scattering cases can well be explained based on the evolution of the constant-energy contours and the sign structure of the SC order parameter. The QPI spectra presented in this paper can be compared with future scanning tunneling microscopy experiments to test whether there are SC phases in electron- and hole-doped Sr₂IrO₄ and what the pairing symmetry is.

Self-control, self-regulation, and doping in sport: a test of the strength-energy model.

PubMed

Chan, Derwin K; Lentillon-Kaestner, Vanessa; Dimmock, James A; Donovan, Robert J; Keatley, David A; Hardcastle, Sarah J; Hagger, Martin S

2015-04-01

We applied the strength-energy model of self-control to understand the relationship between self-control and young athletes' behavioral responses to taking illegal performance-enhancing substances, or "doping." Measures of trait self-control, attitude and intention toward doping, intention toward, and adherence to, doping-avoidant behaviors, and the prevention of unintended doping behaviors were administered to 410 young Australian athletes. Participants also completed a "lollipop" decision-making protocol that simulated avoidance of unintended doping. Hierarchical linear multiple regression analyses revealed that self-control was negatively associated with doping attitude and intention, and positively associated with the intention and adherence to doping-avoidant behaviors, and refusal to take or eat the unfamiliar candy offered in the "lollipop" protocol. Consistent with the strength-energy model, athletes with low self-control were more likely to have heightened attitude and intention toward doping, and reduced intention, behavioral adherence, and awareness of doping avoidance.

Anti-doping analyses at the Sochi Olympic and Paralympic Games 2014.

PubMed

Sobolevsky, Tim; Krotov, Grigory; Dikunets, Marina; Nikitina, Maria; Mochalova, Elena; Rodchenkov, Grigory

2014-01-01

The laboratory anti-doping services during XXII Winter Olympic and XI Paralympic games in Sochi in 2014 were provided by a satellite laboratory facility located within the strictly secured Olympic Park. This laboratory, established and operated by the personnel of Antidoping Center, Moscow, has been authorized by the World Anti-Doping Agency (WADA) to conduct doping control analyses. The 4-floor building accommodated the most advanced analytical instrumentation and became a place of attraction for more than 50 Russian specialists and 25 foreign experts, including independent observers. In total, 2134 urine and 479 blood samples were delivered to the laboratory and analyzed during the Olympic Games (OG), and 403 urine and 108 blood samples - during the Paralympic Games (PG). The number of erythropoietin tests requested in urine was 946 and 166 at the OG and PG, respectively. Though included in the test distribution plan, a growth hormone analysis was cancelled by the Organizing Committee just before the Games. Several adverse analytical findings have been reported including pseudoephedrine (1 case), methylhexaneamine (4 cases), trimetazidine (1 case), dehydrochloromethyltestosterone (1 case), clostebol (1 case), and a designer stimulant N-ethyl-1-phenylbutan-2-amine (1 case). Copyright © 2014 John Wiley & Sons, Ltd.

Study of the photocatalytic activity of Fe 3+, Cr 3+, La 3+ and Eu 3+ single-doped and co-doped TiO 2 catalysts produced by aqueous sol-gel processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malengreaux, Charline M.; Pirard, Sophie L.; Léonard, Géraldine

An aqueous sol-gel process, previously developed for producing undoped and Cu 2+, Ni 2+, Zn 2+ or Pb 2+ doped TiO 2 photocatalysts with remarkably high photocatalytic activity without requiring any calcination step, has been adapted to produce Fe 3+, Cr 3+, La 3+ or Eu 3+ single-doped TiO 2 photocatalysts as well as La3+-Fe3+ and Eu3+-Fe3+ co-doped TiO 2 catalysts. The physicochemical properties of the obtained catalysts have been characterized using a suite of complementary techniques, including ICP-AES, XRD, UV-Vis spectroscopy, nitrogen adsorption-desorption and Fe-57 M ssbauer. The active crystalline phase is obtained without requiring any calcination step andmore » all the different catalysts are composed of nanocrystallites of anatase with a size of 6-7 nm and a high specific surface area varying from 181 to 298 m 2 g -1. In this study, the effect of the NO 3:Ti(IV) mole ratio used to induce the peptisation reaction during the synthesis has been studied and the results revealed that this ratio can influence significantly the textural properties of the resulting catalyst. A screening of the photocatalytic activity of the undoped and Fe 3+, Cr 3+, La 3+ or Eu 3+ single-doped and co-doped photocatalysts has been performed by evaluating the degradation of 4-nitrophenol under UV-Visible light (330 nm < < 800 nm). This study suggests that the photocatalytic activity is significantly influenced by the dopant nature and content with an optimal dopant content being observed in the case of Fe 3+ or La 3+ single-doped as well as in the case of La 3+-Fe 3+ and Eu 3+-Fe 3+ co-doped catalysts. In the case of Cr 3+ single-doped catalysts, a detrimental effect of the dopant on the photocatalytic degradation of 4-nitrophenol has been observed while no significant influence of the dopant has been detected in the case of Eu 3+ single-doped catalysts. In conclusion, the role of the different dopants in modulating the photocatalytic activity is discussed.« less

Study of the photocatalytic activity of Fe 3+, Cr 3+, La 3+ and Eu 3+ single-doped and co-doped TiO 2 catalysts produced by aqueous sol-gel processing

DOE PAGES

Malengreaux, Charline M.; Pirard, Sophie L.; Léonard, Géraldine; ...

2016-08-30

An aqueous sol-gel process, previously developed for producing undoped and Cu 2+, Ni 2+, Zn 2+ or Pb 2+ doped TiO 2 photocatalysts with remarkably high photocatalytic activity without requiring any calcination step, has been adapted to produce Fe 3+, Cr 3+, La 3+ or Eu 3+ single-doped TiO 2 photocatalysts as well as La3+-Fe3+ and Eu3+-Fe3+ co-doped TiO 2 catalysts. The physicochemical properties of the obtained catalysts have been characterized using a suite of complementary techniques, including ICP-AES, XRD, UV-Vis spectroscopy, nitrogen adsorption-desorption and Fe-57 M ssbauer. The active crystalline phase is obtained without requiring any calcination step andmore » all the different catalysts are composed of nanocrystallites of anatase with a size of 6-7 nm and a high specific surface area varying from 181 to 298 m 2 g -1. In this study, the effect of the NO 3:Ti(IV) mole ratio used to induce the peptisation reaction during the synthesis has been studied and the results revealed that this ratio can influence significantly the textural properties of the resulting catalyst. A screening of the photocatalytic activity of the undoped and Fe 3+, Cr 3+, La 3+ or Eu 3+ single-doped and co-doped photocatalysts has been performed by evaluating the degradation of 4-nitrophenol under UV-Visible light (330 nm < < 800 nm). This study suggests that the photocatalytic activity is significantly influenced by the dopant nature and content with an optimal dopant content being observed in the case of Fe 3+ or La 3+ single-doped as well as in the case of La 3+-Fe 3+ and Eu 3+-Fe 3+ co-doped catalysts. In the case of Cr 3+ single-doped catalysts, a detrimental effect of the dopant on the photocatalytic degradation of 4-nitrophenol has been observed while no significant influence of the dopant has been detected in the case of Eu 3+ single-doped catalysts. In conclusion, the role of the different dopants in modulating the photocatalytic activity is discussed.« less

Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serrao, Felcy Jyothi, E-mail: jyothiserrao@gmail.com; Department of Physics, Karnataka Government Research centre SCEM, Mangalore, 575007; Sandeep, K. M.

2016-05-23

Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnOmore » thin films. The minimum resistivity of 2.54 × 10{sup −3} Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.« less

First-principles study of nitrogen-doped CuAlO2

NASA Astrophysics Data System (ADS)

Xu, Ying; Ao, Zhi Min; Yuan, Ding Wang

2012-08-01

The electronic structure and formation energies of N-doped CuAlO2 are studied using first-principles calculations. It is found that, when a N atom is doped into CuAlO2, the N atom prefers to substitute an O atom rather than to occupy an interstitial site of the Cu layer. The NO acts as a shallow accepter while the Ni acts as a deep accepter. The results of the electronic structure show that the N-doping doesn't alter the band gap of CuAlO2 for the both cases. In the substitutional case, the N impurity states occur at the top of valance band maximum (VBM), which provides holes and increases the p-type conductivity. However, in the interstitial case, the N impurity states occur in the middle of the band gap, which are more localized and this indicates that it is not good for p-type conductivity.

Doping in sport: effects, harm and misconceptions.

PubMed

Birzniece, V

2015-03-01

Doping in sport is a widespread problem not just among elite athletes, but even more so in recreational sports. In scientific literature, major emphasis is placed on doping detection, whereas detrimental effects of doping agents on athletes' health are seldom discussed. Androgenic anabolic steroids are well known for their positive effects on muscle mass and strength. Human growth hormone also increases muscle mass, although the majority of that is an increase in extracellular fluid and not the functional muscle mass. In recreational athletes, growth hormone does not have major effect on muscle strength, power or aerobic capacity, but stimulates anaerobic exercise capacity. Erythropoietin administration increases oxygen-carrying capacity of blood improving endurance measures, whereas systemic administration of beta-adrenergic agonists may have positive effect on sprint capacity, and beta-adrenergic antagonists reduce muscle tremor. Thus, there are certain drugs that can improve selective aspects of physical performance. However, most of the doping agents exert serious side-effects, especially when used in combination, at high doses and for a long duration. The extent of long-term health consequences is difficult to predict, but likely to be substantial, especially when gene doping is considered. This review summarises the main groups of doping agents used by athletes, with the main focus on their effects on athletic performance and adverse effects. © 2014 Royal Australasian College of Physicians.

Computational discovery of lanthanide doped and Co-doped Y{sub 3}Al{sub 5}O{sub 12} for optoelectronic applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choudhary, Kamal; Chernatynskiy, Aleksandr; Phillpot, Simon R.

2015-09-14

We systematically elucidate the optoelectronic properties of rare-earth doped and Ce co-doped yttrium aluminum garnet (YAG) using hybrid exchange-correlation functional based density functional theory. The predicted optical transitions agree with the experimental observations for single doped Ce:YAG, Pr:YAG, and co-doped Er,Ce:YAG. We find that co-doping of Ce-doped YAG with any lanthanide except Eu and Lu lowers the transition energies; we attribute this behavior to the lanthanide-induced change in bonding environment of the dopant atoms. Furthermore, we find infrared transitions only in case of the Er, Tb, and Tm co-doped Ce:YAG and suggest Tm,Ce:YAG and Tb,Ce:YAG as possible functional materials formore » efficient spectral up-conversion devices.« less

Effect of modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot lasers having different external loss

NASA Astrophysics Data System (ADS)

Korenev, V. V.; Savelyev, A. V.; Maximov, M. V.; Zubov, F. I.; Shernyakov, Yu. M.; Kulagina, M. M.; Zhukov, A. E.

2017-09-01

The influence of the modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot (QD) lasers is studied experimentally for devices having various external losses. It is shown that in the case of short cavities (high external loss), there is an increase in the lasing power component corresponding to the ground-state optical transitions of QDs as the p-doping level grows. However, in the case of long cavities (small external loss), higher dopant concentrations may have an opposite effect on the output power. Based on these observations, an optimal design of laser geometry and an optimal doping level are discussed.

Possible superconductivity in Sr2IrO4 probed by quasiparticle interference

PubMed Central

Gao, Yi; Zhou, Tao; Huang, Huaixiang; Wang, Qiang-Hua

2015-01-01

Based on the possible superconducting (SC) pairing symmetries recently proposed, the quasiparticle interference (QPI) patterns in electron- and hole-doped Sr2IrO4 are theoretically investigated. In the electron-doped case, the QPI spectra can be explained based on a model similar to the octet model of the cuprates while in the hole-doped case, both the Fermi surface topology and the sign of the SC order parameter resemble those of the iron pnictides and there exists a QPI vector resulting from the interpocket scattering between the electron and hole pockets. In both cases, the evolution of the QPI vectors with energy and their behaviors in the nonmagnetic and magnetic impurity scattering cases can well be explained based on the evolution of the constant-energy contours and the sign structure of the SC order parameter. The QPI spectra presented in this paper can be compared with future scanning tunneling microscopy experiments to test whether there are SC phases in electron- and hole-doped Sr2IrO4 and what the pairing symmetry is. PMID:25783417

Personal and psychosocial predictors of doping use in physical activity settings: a meta-analysis.

PubMed

Ntoumanis, Nikos; Ng, Johan Y Y; Barkoukis, Vassilis; Backhouse, Susan

2014-11-01

There is a growing body of empirical evidence on demographic and psychosocial predictors of doping intentions and behaviors utilizing a variety of variables and conceptual models. However, to date there has been no attempt to quantitatively synthesize the available evidence and identify the strongest predictors of doping. Using meta-analysis, we aimed to (i) determine effect sizes of psychological (e.g. attitudes) and social-contextual factors (e.g. social norms), and demographic (e.g. sex and age) variables on doping intentions and use; (ii) examine variables that moderate such effect sizes; and (iii) test a path analysis model, using the meta-analyzed effect sizes, based on variables from the theory of planned behavior (TPB). Articles were identified from online databases, by contacting experts in the field, and searching the World Anti-Doping Agency website. Studies that measured doping behaviors and/or doping intentions, and at least one other demographic, psychological, or social-contextual variable were included. We identified 63 independent datasets. Study information was extracted by using predefined data fields and taking into account study quality indicators. A random effects meta-analysis was carried out, correcting for sampling and measurement error, and identifying moderator variables. Path analysis was conducted on a subset of studies that utilized the TPB. Use of legal supplements, perceived social norms, and positive attitudes towards doping were the strongest positive correlates of doping intentions and behaviors. In contrast, morality and self-efficacy to refrain from doping had the strongest negative association with doping intentions and behaviors. Furthermore, path analysis suggested that attitudes, perceived norms, and self-efficacy to refrain from doping predicted intentions to dope and, indirectly, doping behaviors. Various meta-analyzed effect sizes were based on a small number of studies, which were correlational in nature. This is a limitation of the extant literature. This review identifies a number of important correlates of doping intention and behavior, many of which were measured via self-reports and were drawn from an extended TPB framework. Future research might benefit from embracing other conceptual models of doping behavior and adopting experimental methodologies that will test some of the identified correlates in an effort to develop targeted anti-doping policies and programs.

Fabrication of ZnO and doped ZnO waveguides deposited by Spin Coating

NASA Astrophysics Data System (ADS)

Mohan, Rosmin Elsa; R, Neha P.; T, Shalu; C, Darshana K.; Sreelatha, K. S.

2015-02-01

In this paper, the synthesis of ZnO and doped Zn1-xAgxO (where x=0.03) nanoparticles by co- precipitation is reported. The precursors used were Zinc Nitrate and Potassium hydroxide pellets. For doping, 3% AgNO3 in ZnNO3 was considered as a separate buffer solution. The prepared nanoparticles were subsequently spin coated onto silica glass substrates at a constant chuck rate of 3000 rpm. The substrate acts as the lower cladding of a waveguide structure. The upper cladding is assumed to be air in the present investigation. The nanostructures of the ZnO powders in the doped and undoped cases were studied using X-ray Diffraction patterns. There was a decrease in the grain size with doping which increase the tunability of the powders to be used as photoluminescent devices. The optical characteristics of the sample were also investigated using UV-Visible spectrophotometer at 200-900 nm wavelengths. The photoluminescence peaks also report a dramatic increase in intensity at the same wavelength for the doped case compared to the undoped one.

Adsorption of cyanogen chloride on the surface of boron nitride nanotubes for CNCl sensing

NASA Astrophysics Data System (ADS)

Movlarooy, Tayebeh; Fadradi, Mahboobeh Amiri

2018-05-01

The adsorption of CNCl gas, on the surface of boron nitride nanotubes in pure form, as well as doped with Al and Ga, based on the density functional theory (DFT) has been studied. The electron and structural properties of pristine and doped nanotubes have been investigated. By calculating the adsorption energy, the most stable positions and the equilibrium distance are obtained, and charge transferred and electronic properties have been calculated. The most stable molecule adsorption position for pure nanotube is obtained at the center of the hexagon and for doped nanotube above the impurity atom from N side.

Effects of single atom doping on the ultrafast electron dynamics of M1Au24(SR)18 (M = Pd, Pt) nanoclusters

NASA Astrophysics Data System (ADS)

Zhou, Meng; Qian, Huifeng; Sfeir, Matthew Y.; Nobusada, Katsuyuki; Jin, Rongchao

2016-03-01

Atomically precise, doped metal clusters are receiving wide research interest due to their synergistic properties dependent on the metal composition. To understand the electronic properties of doped clusters, it is highly desirable to probe the excited state behavior. Here, we report the ultrafast relaxation dynamics of doped M1@Au24(SR)18 (M = Pd, Pt; R = CH2CH2Ph) clusters using femtosecond visible and near infrared transient absorption spectroscopy. Three relaxation components are identified for both mono-doped clusters: (1) sub-picosecond relaxation within the M1Au12 core states; (2) core to shell relaxation in a few picoseconds; and (3) relaxation back to the ground state in more than one nanosecond. Despite similar relaxation pathways for the two doped nanoclusters, the coupling between the metal core and surface ligands is accelerated by over 30% in the case of the Pt dopant compared with the Pd dopant. Compared to Pd doping, the case of Pt doping leads to much more drastic changes in the steady state and transient absorption of the clusters, which indicates that the 5d orbitals of the Pt atom are more strongly mixed with Au 5d and 6s orbitals than the 4d orbitals of the Pd dopant. These results demonstrate that a single foreign atom can lead to entirely different excited state spectral features of the whole cluster compared to the parent Au25(SR)18 cluster. The detailed excited state dynamics of atomically precise Pd/Pt doped gold clusters help further understand their properties and benefit the development of energy-related applications.Atomically precise, doped metal clusters are receiving wide research interest due to their synergistic properties dependent on the metal composition. To understand the electronic properties of doped clusters, it is highly desirable to probe the excited state behavior. Here, we report the ultrafast relaxation dynamics of doped M1@Au24(SR)18 (M = Pd, Pt; R = CH2CH2Ph) clusters using femtosecond visible and near infrared transient absorption spectroscopy. Three relaxation components are identified for both mono-doped clusters: (1) sub-picosecond relaxation within the M1Au12 core states; (2) core to shell relaxation in a few picoseconds; and (3) relaxation back to the ground state in more than one nanosecond. Despite similar relaxation pathways for the two doped nanoclusters, the coupling between the metal core and surface ligands is accelerated by over 30% in the case of the Pt dopant compared with the Pd dopant. Compared to Pd doping, the case of Pt doping leads to much more drastic changes in the steady state and transient absorption of the clusters, which indicates that the 5d orbitals of the Pt atom are more strongly mixed with Au 5d and 6s orbitals than the 4d orbitals of the Pd dopant. These results demonstrate that a single foreign atom can lead to entirely different excited state spectral features of the whole cluster compared to the parent Au25(SR)18 cluster. The detailed excited state dynamics of atomically precise Pd/Pt doped gold clusters help further understand their properties and benefit the development of energy-related applications. Electronic supplementary information (ESI) available: The pump dependent transient absorption spectra and the corresponding global analysis results. See DOI: 10.1039/c6nr01008c

Insight into doping efficiency of organic semiconductors from the analysis of the density of states in n-doped C60 and ZnPc

NASA Astrophysics Data System (ADS)

Gaul, Christopher; Hutsch, Sebastian; Schwarze, Martin; Schellhammer, Karl Sebastian; Bussolotti, Fabio; Kera, Satoshi; Cuniberti, Gianaurelio; Leo, Karl; Ortmann, Frank

2018-05-01

Doping plays a crucial role in semiconductor physics, with n-doping being controlled by the ionization energy of the impurity relative to the conduction band edge. In organic semiconductors, efficient doping is dominated by various effects that are currently not well understood. Here, we simulate and experimentally measure, with direct and inverse photoemission spectroscopy, the density of states and the Fermi level position of the prototypical materials C60 and zinc phthalocyanine n-doped with highly efficient benzimidazoline radicals (2-Cyc-DMBI). We study the role of doping-induced gap states, and, in particular, of the difference Δ1 between the electron affinity of the undoped material and the ionization potential of its doped counterpart. We show that this parameter is critical for the generation of free carriers and influences the conductivity of the doped films. Tuning of Δ1 may provide alternative strategies to optimize the electronic properties of organic semiconductors.

Co and Fe doping effect on negative temperature coefficient characteristics of nano-grained NiMn2O4 thick films fabricated by aerosol-deposition.

PubMed

Ryu, Jungho; Han, Guifang; Lee, Jong-Pil; Lim, Dong-Soo; Park, Yun-Soo; Jeong, Dae-Yong

2013-05-01

Spinel structured highly dense NiMn2O4-based (NMO) negative temperature coefficient (NTC) thermistor thick films were fabricated by aerosol-deposition at room temperature. To enhance the thermistor B constant, which represents the temperature sensitivity of the NMO thermistor material, Co and Co-Fe doping was applied. In the case of single element doping of Co, 5 mol% doped NMO showed a high B constant of over 5000 K, while undoped NMO showed -4000 K. By doping Fe to the 5 mol% Co doped NMO, the B constant was more enhanced at over 5600 K. The aging effect on the NTC characteristics of Co doped and Fe-Co co-doped NMO thick film showed very stable resistivity-time characteristics because of the highly dense microstructure.

Optical method for the screening of doping substances

NASA Astrophysics Data System (ADS)

Lademann, J.; Shevtsova, J.; Patzelt, A.; Richter, H.; Gladkowa, N. D.; Gelikonov, V. M.; Gonchukov, S. A.; Sterry, W.; Blume-Peytavi, U.

2008-12-01

During the last years, an increased misuse of doping substances in sport has been observed. The action of doping substances characterized by the stimulation of blood flow and metabolic processes is also reflected in the hair structure. In the present study it was demonstrated that optical coherent tomography is well suited for the analysis of hair parameters influenced by doping. Analyzing 20 patients, systemically treated with steroids which also represent doping substances, it was found that in all cases a significant increase in the cross-section of the hairs could be detected. The results obtained in the study are not only important for the screening of doping substances but also for medical diagnostics and control of compliance of patients.

Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

NASA Technical Reports Server (NTRS)

Ho, C.-T.

1982-01-01

The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

Current switching ratio optimization using dual pocket doping engineering

NASA Astrophysics Data System (ADS)

Dash, Sidhartha; Sahoo, Girija Shankar; Mishra, Guru Prasad

2018-01-01

This paper presents a smart idea to maximize current switching ratio of cylindrical gate tunnel FET (CGT) by growing pocket layers in both source and channel region. The pocket layers positioned in the source and channel of the device provides significant improvement in ON-state and OFF-state current respectively. The dual pocket doped cylindrical gate TFET (DP-CGT) exhibits much superior performance in term of drain current, transconductance and current ratio as compared to conventional CGT, channel pocket doped CGT (CP-CGT) and source pocket doped CGT (SP-CGT). Further, the current ratio has been optimized w.r.t. width and instantaneous position both the pocket layers. The much improved current ratio and low power consumption makes the proposed device suitable for low-power and high speed application. The simulation work of DP-CGT is done using 3D Sentaurus TCAD device simulator from Synopsys.

Positron annihilation study of Sr Doping in La(2-x)Sr(x)CuO4

NASA Astrophysics Data System (ADS)

Sterne, P. A.; Howell, R. H.; Fluss, M. J.; Kaiser, J. H.

1993-04-01

A combined experimental and threshold study of effects of Sr doping on electronic structure of La(2-x)Sr(x)CuO(4) was presented. Electron-positron momentum distributions were measured to high statistical precision (greater than 4 x 10(exp 8) counts) at room temperature for samples with Sr concentrations of x = 0.0, 0.1, 0.13, and 0.2. Analysis of all four spectra reveal strong features due to electron-positron wavefunction overlap, in quantitative agreement with theoretical calculations. The Sr doped samples show discontinuities consistent with presence of a Fermi surface. The form and position of these features are in general agreement with the predictions of band theory. Correspondence between theory and experiment, as well as some differences, are revealed by a detailed study of the changes in electron-position momentum density with increasing Sr doping.

Effects of fabrication methods on spin relaxation and crystallite quality in Tm-doped ? powders studied using spectral hole burning

NASA Astrophysics Data System (ADS)

Lutz, Thomas; Veissier, Lucile; Thiel, Charles W.; Woodburn, Philip J. T.; Cone, Rufus L.; Barclay, Paul E.; Tittel, Wolfgang

2016-01-01

High-quality rare-earth-ion (REI) doped materials are a prerequisite for many applications such as quantum memories, ultra-high-resolution optical spectrum analyzers and information processing. Compared to bulk materials, REI doped powders offer low-cost fabrication and a greater range of accessible material systems. Here we show that crystal properties, such as nuclear spin lifetime, are strongly affected by mechanical treatment, and that spectral hole burning can serve as a sensitive method to characterize the quality of REI doped powders. We focus on the specific case of thulium doped ? (Tm:YAG). Different methods for obtaining the powders are compared and the influence of annealing on the spectroscopic quality of powders is investigated on a few examples. We conclude that annealing can reverse some detrimental effects of powder fabrication and, in certain cases, the properties of the bulk material can be reached. Our results may be applicable to other impurities and other crystals, including color centers in nano-structured diamond.

Effects of B site doping on electronic structures of InNbO4 based on hybrid density functional calculations

NASA Astrophysics Data System (ADS)

Lu, M. F.; Zhou, C. P.; Li, Q. Q.; Zhang, C. L.; Shi, H. F.

2018-01-01

In order to improve the photocatalytic activity under visible-light irradiation, we adopted first principle calculations based on density functional theory (DFT) to calculate the electronic structures of B site transition metal element doped InNbO4. The results indicated that the complete hybridization of Nb 4d states and some Ti 3d states contributed to the new conduction band of Ti doped InNbO4, barely changing the position of band edge. For Cr doping, some localized Cr 3d states were introduced into the band gap. Nonetheless, the potential of localized levels was too positive to cause visible-light reaction. When it came to Cu doping, the band gap was almost same with that of InNbO4 as well as some localized Cu 3d states appeared above the top of VB. The introduction of localized energy levels benefited electrons to migrate from valence band (VB) to conduction band (CB) by absorbing lower energy photons, realizing visible-light response.

First-principle study of phosphors for white-LED applications : absorption and emission energies for Ce- and Eu-doped hosts.

NASA Astrophysics Data System (ADS)

Gonze, Xavier; Jia, Yongchao; Miglio, Anna; Giantomassi, Matteo; Ponce, Samuel; Mikami, Masayoshi

After the invasion of compact fluorescent lamps, white LED lighting is becoming a major contender in ecofriendly light sources, with a combination of yellow-, green- and/or red-emitting phosphors partly absorbing the blue light emitted by an InGaN LED. After introducing the semi-empirical Dorenbos model for 4f' 5d transition energies of rare earth ions, I present a first-principle study of two dozen compounds, pristine as well as doped with Ce3+ or Eu2+ ions, in view of explaining their different emission color. The neutral excitation of the ions is simulated through a constrained density functional theory method coupled with a delta SCF analysis of total energies, yielding absorption energies. Then, atomic positions in the excited state are relaxed, yielding emission energies and Stokes shifts, and identification of luminescent centers. In case of the Ce doped materials, the first-principle approach matches experimental data within 0.3 eV for both absorption and emission energies, covering a range of values between 2.0 eV and 5.0 eV, and provides Stokes shifts within 30%, with two exceptions. This is significantly better than the semi-empirical Dorenbos model. A similar analysis is performed for Eu-doped materials, also examining the thermal quenching of two oxynitride hosts. The work was supported by the FRS-FNRS Belgium (PDR Grant T.0238.13 - AIXPHO).

Doping in sport: a review of medical practitioners' knowledge, attitudes and beliefs.

PubMed

Backhouse, Susan H; McKenna, Jim

2011-05-01

Central to the work of many medical practitioners is the provision of pharmaceutical support for patients. Patients can include athletes who are subject to anti-doping rules and regulations which prohibit the use of certain substances in and out of competition. This paper examines the evidence on medical practitioners' knowledge, attitudes and beliefs towards doping in sport. A systematic search strategy was followed. Research questions and relevance criteria were developed a priori. Potentially relevant studies were located through electronic and hand searches limited to English language articles published between 1990 and 2010. Articles were assessed for relevance by two independent assessors and the results of selected studies were abstracted and synthesised. Outcomes of interest were knowledge, attitudes and beliefs in relation to doping in sport. Six studies met the inclusion criteria and were examined in detail. Samples reflected a range of medical practitioners drawn from the UK, France (2), Greece, Italy and Ireland. The investigations varied with respect to outcome focus and quality of evidence presented. Whilst the extant empirical research posits a negative attitude towards illegal performance enhancement combined with a positive inclination towards doping prevention, it also exposes a limited knowledge of anti-doping rules and regulations. Insufficient education, leading to a lack of awareness and understanding, could render this professional group at risk of doping offences considering Article 2.8 of the World Anti-Doping Agency Code (WADC). Moreover, in light of the incongruence between professional medical codes and WADC Article 2.8, medical professionals may face doping dilemmas and therefore further discourse is required. At present, the current evidence-base makes it difficult to plan developmentally appropriate education to span the exposure spectrum. Addressing this situation appears warranted. Copyright © 2011 Elsevier B.V. All rights reserved.

Education in Anti-Doping: The Art of Self-Imposed Constraints.

PubMed

Loland, Sigmund

2017-01-01

The pillars of anti-doping are detection, deterrence, and prevention. Detection takes the form of testing for banned substances. Deterrence builds on testing and gathering evidence. Athletes who test positive are exposed to penalties. The main tool of prevention is education. Education takes many forms and can be implemented in many ways. This chapter addresses the nature and challenges of current anti-doping education. Firstly, general goals of education and their connection to sport are discussed. Secondly, three normative interpretations of sport are presented, and their implications for anti-doping education are examined. Instrumentalist interpretations and interpretations with emphasis on performance and enhancement challenge the anti-doping campaign. A human excellence interpretation is advocated in which anti-doping is considered a consistent and integral part of sport. Thirdly, future challenges for anti-doping education are reflected upon. © 2017 S. Karger AG, Basel.

Modulation of electronic transport properties in armchair phosphorene nanoribbons by doping and edge passivation.

PubMed

Guo, Caixia; Wang, Tianxing; Xia, Congxin; Liu, Yufang

2017-10-09

The electronic structures and transport properties of group IV atoms (C, Si, Ge)-doped armchair phosphorene nanoribbons (APNRs) are investigated using first-principles calculations, considering different edge passivation. The results show that the C, Si, Ge dopants can induce the transition occur from semiconductor to metal in the APNRs. The negative differential resistance (NDR) behavior in the doped APNR system is robust with respect to the doping concentration and edge passivation type. However, their current peak positions and peak-to-valley ratio (PVR) values are correlated with doping concentration and edge passivation type. In particular, for the C, Si-doped APNRs, the low bias NDR behavior with the PVR (10 5 -10 8 ) can be observed when doping concentration is low in the APNRs with the F and H edge passivation. These results may play an important role for the fabrication of future low power consumption nano-electronic devices.

Empathic and Self-Regulatory Processes Governing Doping Behavior

PubMed Central

Boardley, Ian D.; Smith, Alan L.; Mills, John P.; Grix, Jonathan; Wynne, Ceri

2017-01-01

Evidence associating doping behavior with moral disengagement (MD) has accumulated over recent years. However, to date, research examining links between MD and doping has not considered key theoretically grounded influences and outcomes of MD. As such, there is a need for quantitative research in relevant populations that purposefully examines the explanatory pathways through which MD is thought to operate. Toward this end, the current study examined a conceptually grounded model of doping behavior that incorporated empathy, doping self-regulatory efficacy (SRE), doping MD, anticipated guilt and self-reported doping/doping susceptibility. Participants were specifically recruited to represent four key physical-activity contexts and consisted of team- (n = 195) and individual- (n = 169) sport athletes and hardcore- (n = 125) and corporate- (n = 121) gym exercisers representing both genders (nmale = 371; nfemale = 239); self-reported lifetime prevalence of doping across the sample was 13.6%. Each participant completed questionnaires assessing the aforementioned variables. Structural equation modeling indicated strong support for all study hypotheses. Specifically, we established: (a) empathy and doping SRE negatively predicted reported doping; (b) the predictive effects of empathy and doping SRE on reported doping were mediated by doping MD and anticipated guilt; (c) doping MD positively predicted reported doping; (d) the predictive effects of doping MD on reported doping were partially mediated by anticipated guilt. Substituting self-reported doping for doping susceptibility, multisample analyses then demonstrated these predictive effects were largely invariant between males and females and across the four physical-activity contexts represented. These findings extend current knowledge on a number of levels, and in doing so aid our understanding of key psychosocial processes that may govern doping behavior across key physical-activity contexts. PMID:29018370

Empathic and Self-Regulatory Processes Governing Doping Behavior.

PubMed

Boardley, Ian D; Smith, Alan L; Mills, John P; Grix, Jonathan; Wynne, Ceri

2017-01-01

Evidence associating doping behavior with moral disengagement (MD) has accumulated over recent years. However, to date, research examining links between MD and doping has not considered key theoretically grounded influences and outcomes of MD. As such, there is a need for quantitative research in relevant populations that purposefully examines the explanatory pathways through which MD is thought to operate. Toward this end, the current study examined a conceptually grounded model of doping behavior that incorporated empathy, doping self-regulatory efficacy (SRE), doping MD, anticipated guilt and self-reported doping/doping susceptibility. Participants were specifically recruited to represent four key physical-activity contexts and consisted of team- ( n = 195) and individual- ( n = 169) sport athletes and hardcore- ( n = 125) and corporate- ( n = 121) gym exercisers representing both genders ( n male = 371; n female = 239); self-reported lifetime prevalence of doping across the sample was 13.6%. Each participant completed questionnaires assessing the aforementioned variables. Structural equation modeling indicated strong support for all study hypotheses. Specifically, we established: (a) empathy and doping SRE negatively predicted reported doping; (b) the predictive effects of empathy and doping SRE on reported doping were mediated by doping MD and anticipated guilt; (c) doping MD positively predicted reported doping; (d) the predictive effects of doping MD on reported doping were partially mediated by anticipated guilt. Substituting self-reported doping for doping susceptibility, multisample analyses then demonstrated these predictive effects were largely invariant between males and females and across the four physical-activity contexts represented. These findings extend current knowledge on a number of levels, and in doing so aid our understanding of key psychosocial processes that may govern doping behavior across key physical-activity contexts.

Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamada, Michihiro; Uematsu, Masashi; Itoh, Kohei M., E-mail: kitoh@appi.keio.ac.jp

2015-09-28

We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.

Reduced-graphene-oxide supported tantalum-based electrocatalysts: Controlled nitrogen doping and oxygen reduction reaction

NASA Astrophysics Data System (ADS)

Yang, Xiaoyun; Mo, Qijie; Guo, Yulin; Chen, Nana; Gao, Qingsheng

2018-03-01

Controlled N-doping is feasible to engineer the surface stoichiometry and the electronic configuration of metal-oxide electrocatalysts toward efficient oxygen reduction reactions (ORR). Taking reduced graphene oxide supported tantalum-oxides (TaOx/RGO) for example, this work illustrated the controlled N-doping in both metal-oxides and carbon supports, and the contribution to the improved ORR activity. The active N-doped TaOx/RGO electrocatalysts were fabricated via SiO2-assisted pyrolysis, in which the amount and kind of N-doping were tailored toward efficient electrocatalysis. The optimal nanocomposites showed a quite positive half-wave potential (0.80 V vs. RHE), the excellent long-term stability, and the outstanding tolerance to methanol crossing. The improvement in ORR was reasonably attributed to the synergy between N-doped TaOx and N-doped RGO. Elucidating the importance of controlled N-doping for electrocatalysis, this work will open up new opportunities to explore noble-metal-free materials for renewable energy applications.

A position-dependent mass model for the Thomas–Fermi potential: Exact solvability and relation to δ-doped semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulze-Halberg, Axel, E-mail: xbataxel@gmail.com; García-Ravelo, Jesús; Pacheco-García, Christian

We consider the Schrödinger equation in the Thomas–Fermi field, a model that has been used for describing electron systems in δ-doped semiconductors. It is shown that the problem becomes exactly-solvable if a particular effective (position-dependent) mass distribution is incorporated. Orthogonal sets of normalizable bound state solutions are constructed in explicit form, and the associated energies are determined. We compare our results with the corresponding findings on the constant-mass problem discussed by Ioriatti (1990) [13]. -- Highlights: ► We introduce an exactly solvable, position-dependent mass model for the Thomas–Fermi potential. ► Orthogonal sets of solutions to our model are constructed inmore » closed form. ► Relation to delta-doped semiconductors is discussed. ► Explicit subband bottom energies are calculated and compared to results obtained in a previous study.« less

The effect of p-doping on multi-state lasing in InAs/InGaAs quantum dot lasers for different cavity lengths

NASA Astrophysics Data System (ADS)

Korenev, V. V.; Savelyev, A. V.; Maximov, M. V.; Zubov, F. I.; Shernyakov, Yu M.; Zhukov, A. E.

2017-11-01

The effect of modulation p-doping on multi-state lasing in InAs/InGaAs quantum dot (QD) lasers is studied for different levels of acceptor concentration. It is shown that in case of the short laser cavities, p-doping results in higher output power of the ground-state optical transitions of InAs/InGaAs QDs whereas in longer samples p-doping may result in the decrease of this power component. On the basis of this observation, the optimal design of laser active region and optimal doping level are discussed in details.

Understanding the photoluminescence characteristics of Eu{sup 3+}-doped double-perovskite by electronic structure calculation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghosh, Binita; Halder, Saswata; Sinha, T. P.

2016-05-23

Europium-doped luminescent barium samarium tantalum oxide Ba{sub 2}SmTaO{sub 6} (BST) has been investigated by first-principles calculation, and the crystal structure, electronic structure, and optical properties of pure BST and Eu-doped BST have been examined and compared. Based on the calculated results, the luminescence properties and mechanism of Eu-doped BST has been discussed. In the case of Eu-doped BST, there is an impurity energy band at the Fermi level, which is formed by seven spin up energy levels of Eu and act as the luminescent centre, which is evident from the band structure calculations.

Structure prediction of boron-doped graphene by machine learning

NASA Astrophysics Data System (ADS)

M. Dieb, Thaer; Hou, Zhufeng; Tsuda, Koji

2018-06-01

Heteroatom doping has endowed graphene with manifold aspects of material properties and boosted its applications. The atomic structure determination of doped graphene is vital to understand its material properties. Motivated by the recently synthesized boron-doped graphene with relatively high concentration, here we employ machine learning methods to search the most stable structures of doped boron atoms in graphene, in conjunction with the atomistic simulations. From the determined stable structures, we find that in the free-standing pristine graphene, the doped boron atoms energetically prefer to substitute for the carbon atoms at different sublattice sites and that the para configuration of boron-boron pair is dominant in the cases of high boron concentrations. The boron doping can increase the work function of graphene by 0.7 eV for a boron content higher than 3.1%.

Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

NASA Astrophysics Data System (ADS)

Chung, S. J.; Senthil Kumar, M.; Lee, Y. S.; Suh, E.-K.; An, M. H.

2010-05-01

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

Electronic and magnetic properties of SnS2 monolayer doped with 4d transition metals

NASA Astrophysics Data System (ADS)

Xiao, Wen-Zhi; Xiao, Gang; Rong, Qing-Yan; Chen, Qiao; Wang, Ling-Ling

2017-09-01

We investigate the electronic structures and magnetic properties of SnS2 monolayers substitutionally doped with 4-d transition-metal through systematic first principles calculations. The doped complexes exhibit interesting electronic and magnetic behaviors, depending on the interplay between crystal field splitting, Hund's rule, and 4d levels. The system doped with Y is nonmagnetic metal. Both the Zr- and Pd-doped systems remain nonmagnetic semiconductors. Doping results in half-metallic states for Nb-, Ru-, Rh-, Ag, and Cd doped cases, and magnetic semiconductors for systems with Mo and Tc dopants. In particular, the Nb- and Mo-doped systems display long-ranged ferromagnetic ordering with Curie temperature above room temperature, which are primarily attributable to the double-exchange mechanism, and the p-d/p-p hybridizations, respectively. Moreover, The Mo-doped system has excellent energetic stability and flexible mechanical stability, and also possesses remarkable dynamic and thermal (500 K) stability. Our studies demonstrate that Nb- and Mo-doped SnS2 monolayers are promising candidates for preparing 2D diluted magnetic semiconductors, and hence will be a helpful clue for experimentalists.

Local symmetry breaking in SnO2 nanocrystals with cobalt doping and its effect on optical properties.

PubMed

Roy, S; Joshi, Amish G; Chatterjee, S; Ghosh, Anup K

2018-06-07

X-ray photoemission spectroscopy (XPS), X-ray diffraction (XRD) and transmission electron microscopy (TEM) have been used to study the structural and morphological characteristics of cobalt doped tin(iv) oxide (Sn1-xCoxO2; 0 ≤ x ≤ 0.04) nanocrystals synthesized by a chemical co-precipitation technique. Electronic structure analysis using X-ray photoemission spectroscopy (XPS) shows the formation of tin interstitials (Sni) and reduction of oxygen vacancies (VO) in the host lattice on Co doping and that the doped Co exists in mixed valence states of +2 and +3. Using XRD, the preferential position of the Sni and doped Co in the unit cell of the nanocrystals have been estimated. Rietveld refinement of XRD data shows that samples are of single phase and variation of lattice constants follows Vegard's law. XRD and TEM measurements show that the crystallite size of the nanocrystals decrease with increase in Co doping concentration. SAED patterns confirm the monocrystalline nature of the samples. The study of the lattice dynamics using Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy shows the existence of many disorder activated forbidden optical phonon modes, along with the corresponding classical modes, signifying Co induced local symmetry breaking in the nanocrystals. UV-Vis spectroscopy shows that the optical band gap has red shifted with increase in doping concentration. The study of Urbach energy confirms the increase in disorder in the nanocrystals with Co doping. Local symmetry breaking induced UV emission along with violet, blue and green luminescence has been observed from the PL study. The spectral contribution of UV emission decreases and green luminescence increases with increase in doping. Using PL, in conjunction with Raman spectroscopy, the type of oxygen vacancy induced in the nanocrystals on Co doping has been confirmed and the position of the defect levels in the forbidden zone (w.r.t. the optical band gap) has been studied.

Cr:SnO2 thin films-synthesis and characterization

NASA Astrophysics Data System (ADS)

Varghese, Anitta Rose; B. Bhadrapriya, C.; Amarendra, G.; Hussain, Shamima

2018-04-01

Thin films of pure and Chromium doped SnO2 were synthesized using sol-gel method by spin coating technique. XRD studies confirmed the formation of tetragonal structure for SnO2 thin films. Variations in peak width and position were identified with doping. The optical band gap of the undoped films was found to be 3.8eV and varied with doping. Raman spectrum gave signature peaks of Sn-O and Cr-O bonds for undoped and doped films. The uniformity of the samples and formation of aggregates were observed from FESEM analysis.

Ablation characteristics of carbon-doped glycerol irradiated by a 1064 nm nanosecond pulse laser

NASA Astrophysics Data System (ADS)

Jing, QI; Siqi, ZHANG; Tian, LIANG; Ke, XIAO; Weichong, TANG; Zhiyuan, ZHENG

2018-03-01

The ablation characteristics of carbon-doped glycerol were investigated in laser plasma propulsion using a pulse laser with 10 ns pulse width and 1064 nm wavelength. The results showed that with the incident laser intensity increasing, the target momentum decreased. Results still indicated that the strong plasma shielded the consumption loss and resulted in a low coupling coefficient. Furthermore, the carbon-doping gave rise to variations in the laser focal position and laser intensity, which in turn reduced the glycerol splashing. Based on the glycerol viscosity and the carbon doping, a high specific impulse is anticipated.

Structural and optical properties of Tb and Na-Tb co-doped Ca3V2O8 phosphors prepared by sol-gel process

NASA Astrophysics Data System (ADS)

Parab, Shambhu S.; Salker, A. V.

2018-01-01

A malic acid assisted sol-gel route was successfully employed to prepare two distinct series of green emitting Ca3V2O8 phosphors. In the first series, Tb was solely doped whereas in the second series Na and Tb were doped simultaneously in the Ca3V2O8 crystal lattice. X-ray diffraction studies proved the utility of adopted preparative method by confirming the monophasic formation of all compounds from both the series. Spectral analysis like Raman spectroscopy, UV-DRS were undertaken to analyse the local structure, crystallinity and absorptive characteristics. XPS validated the presence of desired oxidation states of all the elements present. Finally, photoluminescence studies were done to elucidate the scope of prepared compounds as green emitting phosphors and also to understand the effect of both doping schemes on the luminescence. Intense green emission was observed in both the cases. Tb concentration of 0.08 was found to be optimum in case of Tb singly doped compounds whereas Tb = 0.12 showed highest intensity among the Na-Tb co-doped samples. Moreover, a red shift in the excitation wavelength was observed after Na doping signifying a change in the local electronic environment which in turn has affected the luminescence pattern. Local crystallinity and vacancy concentrations were found to have a major say on the emission intensities.

Doping induced carrier and band-gap modulation in bulk versus nano for topological insulators: A test case of Stibnite

NASA Astrophysics Data System (ADS)

Maji, Tuhin Kumar; Pal, Samir Kumar; Karmakar, Debjani

2018-04-01

We aim at comparing the electronic properties of topological insulator Sb2S3 in bulk and Nanorod using density-functional scheme and investigating the effects of Se-doping at chalcogen-site. While going from bulk to nano, there is a drastic change in the band gap due to surface-induced strain. However, the trend of band gap modulation with increased Se doping is more prominent in bulk. Interestingly, Se-doping introduces different type of carriers in bulk and nano.

Degenerate doping of metallic anodes

DOEpatents

Friesen, Cody A; Zeller, Robert A; Johnson, Paul B; Switzer, Elise E

2015-05-12

Embodiments of the invention relate to an electrochemical cell comprising: (i) a fuel electrode comprising a metal fuel, (ii) a positive electrode, (iii) an ionically conductive medium, and (iv) a dopant; the electrodes being operable in a discharge mode wherein the metal fuel is oxidized at the fuel electrode and the dopant increases the conductivity of the metal fuel oxidation product. In an embodiment, the oxidation product comprises an oxide of the metal fuel which is doped degenerately. In an embodiment, the positive electrode is an air electrode that absorbs gaseous oxygen, wherein during discharge mode, oxygen is reduced at the air electrode. Embodiments of the invention also relate to methods of producing an electrode comprising a metal and a doped metal oxidation product.

Stability of boron-doped graphene/copper interface: DFT, XPS and OSEE studies

NASA Astrophysics Data System (ADS)

Boukhvalov, D. W.; Zhidkov, I. S.; Kukharenko, A. I.; Slesarev, A. I.; Zatsepin, A. F.; Cholakh, S. O.; Kurmaev, E. Z.

2018-05-01

Two different types of boron-doped graphene/copper interfaces synthesized using two different flow rates of Ar through the bubbler containing the boron source were studied. X-ray photoelectron spectra (XPS) and optically stimulated electron emission (OSEE) measurements have demonstrated that boron-doped graphene coating provides a high corrosion resistivity of Cu-substrate with the light traces of the oxidation of carbon cover. The density functional theory calculations suggest that for the case of substitutional (graphitic) boron-defect only the oxidation near boron impurity is energetically favorable and creation of the vacancies that can induce the oxidation of copper substrate is energetically unfavorable. In the case of non-graphitic boron defects oxidation of the area, a nearby impurity is metastable that not only prevent oxidation but makes boron-doped graphene. Modeling of oxygen reduction reaction demonstrates high catalytic performance of these materials.

Comparison of carrier transport mechanism under UV/Vis illumination in an AZO photodetector and an AZO/p-Si heterojunction photodiode produced by spray pyrolysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shasti, M.; Mortezaali, A., E-mail: mortezaali@alzahra.ac.ir; Dariani, R. S.

2015-01-14

In this study, Aluminum doped Zinc Oxide (AZO) layer is deposited on p-type silicon (p-Si) by spray pyrolysis method to fabricate ultraviolet-visible (UV/Vis) photodetector as Al doping process can have positive effect on the photodetector performance. Morphology, crystalline structure, and Al concentration of AZO layer are investigated by SEM, XRD, and EDX. The goal of this study is to analyze the mechanism of carrier transport by means of current-voltage characteristics under UV/Vis illumination in two cases: (a) electrodes connected to the surface of AZO layer and (b) electrodes connected to cross section of heterojunction (AZO/p-Si). Measurements indicate that the AZO/p-Simore » photodiode exhibits a higher photocurrent and lower photoresponse time under visible illumination with respect to AZO photodetector; while under UV illumination, the above result is inversed. Besides, the internal junction field of AZO/p-Si heterojunction plays an important role on this mechanism.« less

Hole spectral functions in lightly doped quantum antiferromagnets

NASA Astrophysics Data System (ADS)

Kar, Satyaki; Manousakis, Efstratios

2011-11-01

We study the hole and magnon spectral functions as a function of hole doping in the two-dimensional t-J and t-t'-t''-J models working within the limits of spin-wave theory by linearizing the hole-spin-deviation interaction and by adapting the noncrossing approximation. We find that the staggered magnetization decreases rather rapidly with doping and it goes to zero at a few percent of hole concentration in both t-J and t-t'-t''-J models. Furthermore, our results show that the residue of the quasiparticle peak at G⃗=(±π/2,±π/2) decreases very rapidly with doping. We also find pockets centered at G⃗, (i) with an elliptical shape with large eccentricity along the antinodal direction in the case of the t-J model and (ii) with an almost circular shape in the case of the t-t'-t''-J model. Last, we show that the spectral intensity distribution in the doped antiferromagnet has a waterfall-like pattern along the nodal direction of the Brillouin zone, a feature that is also seen in angle-resolved photoemission spectroscopy measurements.

Effects of single atom doping on the ultrafast electron dynamics of M1Au24(SR)18 (M = Pd, Pt) nanoclusters.

PubMed

Zhou, Meng; Qian, Huifeng; Sfeir, Matthew Y; Nobusada, Katsuyuki; Jin, Rongchao

2016-04-07

Atomically precise, doped metal clusters are receiving wide research interest due to their synergistic properties dependent on the metal composition. To understand the electronic properties of doped clusters, it is highly desirable to probe the excited state behavior. Here, we report the ultrafast relaxation dynamics of doped M1@Au24(SR)18 (M = Pd, Pt; R = CH2CH2Ph) clusters using femtosecond visible and near infrared transient absorption spectroscopy. Three relaxation components are identified for both mono-doped clusters: (1) sub-picosecond relaxation within the M1Au12 core states; (2) core to shell relaxation in a few picoseconds; and (3) relaxation back to the ground state in more than one nanosecond. Despite similar relaxation pathways for the two doped nanoclusters, the coupling between the metal core and surface ligands is accelerated by over 30% in the case of the Pt dopant compared with the Pd dopant. Compared to Pd doping, the case of Pt doping leads to much more drastic changes in the steady state and transient absorption of the clusters, which indicates that the 5d orbitals of the Pt atom are more strongly mixed with Au 5d and 6s orbitals than the 4d orbitals of the Pd dopant. These results demonstrate that a single foreign atom can lead to entirely different excited state spectral features of the whole cluster compared to the parent Au25(SR)18 cluster. The detailed excited state dynamics of atomically precise Pd/Pt doped gold clusters help further understand their properties and benefit the development of energy-related applications.

Effects of single atom doping on the ultrafast electron dynamics of M 1Au 24(SR) 18 (M = Pd, Pt) nanoclusters

DOE PAGES

Zhou, Meng; Qian, Huifeng; Sfeir, Matthew Y.; ...

2016-02-29

Atomically precise, doped metal clusters are receiving wide research interest due to their synergistic properties dependent on the metal composition. To understand the electronic properties of doped clusters, it is highly desirable to probe the excited state behavior. Here, we report the ultrafast relaxation dynamics of doped M 1@Au 24(SR) 18 (M = Pd, Pt; R = CH 2CH 2Ph) clusters using femtosecond visible and near infrared transient absorption spectroscopy. Three relaxation components are identified for both mono-doped clusters: (1) sub-picosecond relaxation within the M 1Au 12 core states; (2) core to shell relaxation in a few picoseconds; and (3)more » relaxation back to the ground state in more than one nanosecond. Despite similar relaxation pathways for the two doped nanoclusters, the coupling between the metal core and surface ligands is accelerated by over 30% in the case of the Pt dopant compared with the Pd dopant. Compared to Pd doping, the case of Pt doping leads to much more drastic changes in the steady state and transient absorption of the clusters, which indicates that the 5d orbitals of the Pt atom are more strongly mixed with Au 5d and 6s orbitals than the 4d orbitals of the Pd dopant. These results demonstrate that a single foreign atom can lead to entirely different excited state spectral features of the whole cluster compared to the parent Au 25(SR) 18 cluster. As a result, the detailed excited state dynamics of atomically precise Pd/Pt doped gold clusters help further understand their properties and benefit the development of energy-related applications.« less

Room temperature ferromagnetism in transition metal-doped black phosphorous

NASA Astrophysics Data System (ADS)

Jiang, Xiaohong; Zhang, Xinwei; Xiong, Fang; Hua, Zhenghe; Wang, Zhihe; Yang, Shaoguang

2018-05-01

High pressure high temperature synthesis of transition metal (TM = V, Cr, Mn, Fe, Co, Ni, and Cu) doped black phosphorus (BP) was performed. Room temperature ferromagnetism was observed in Cr and Mn doped BP samples. X-ray diffraction and Raman measurements revealed pure phase BP without any impurity. Transport measurements showed us semiconducting character in 5 at. % doped BP samples Cr5%P95% and Mn5%P95%. The magnetoresistance (MR) studies presented positive MR in the relatively high temperature range and negative MR in the low temperature range. Compared to that of pure BP, the maximum MR was enhanced in Cr5%P95%. However, paramagnetism was observed in V, Fe, Co, Ni, and Cu doped BP samples.

Spin polarized first principles study of Mn doped gallium nitride monolayer nanosheet

NASA Astrophysics Data System (ADS)

Sharma, Venus; Kaur, Sumandeep; Srivastava, Sunita; Kumar, Tankeshwar

2017-05-01

The structural, electronic and magnetic properties of gallium nitride nanosheet (GaNs) doped with Mn atoms have been studied using spin polarized density functional theory. The binding energy per atom, Energy Band gap, Fermi energy, magnetic moment, electric dipole moment have been found. The doped nanosheet is found to be more stable than pure GaN monolayer nanosheet. Adsorption of Mn atom has been done at four different sites on GaNs which affects the fermi level position. It is found that depending on the doping site, Mn can behave both like p-type semiconductor and also as n-type semiconductor. Also, it is ascertained that Mn doped GaNs (GaNs-Mn) exhibits ferromagnetic behavior.

Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition

NASA Astrophysics Data System (ADS)

Wang, Jin-Liang; Wu, Er-Xing

2007-03-01

The B- and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) are prepared by plasma-enhanced chemical vapour deposition (PECVD). The microstructures of doped nc-Si:H films are carefully and systematically characterized by using high resolution electron microscopy (HREM), Raman scattering, x-ray diffraction (XRD), Auger electron spectroscopy (AES), and resonant nucleus reaction (RNR). The results show that as the doping concentration of PH3 increases, the average grain size (d) tends to decrease and the crystalline volume percentage (Xc) increases simultaneously. For the B-doped samples, as the doping concentration of B2H6 increases, no obvious change in the value of d is observed, but the value of Xc is found to decrease. This is especially apparent in the case of heavy B2H6 doped samples, where the films change from nanocrystalline to amorphous.

Effect of Co doping concentration on structural properties and optical parameters of Co-doped ZnO thin films by sol-gel dip-coating method.

PubMed

Nam, Giwoong; Yoon, Hyunsik; Kim, Byunggu; Lee, Dong-Yul; Kim, Jong Su; Leem, Jae-Young

2014-11-01

The structural and optical properties of Co-doped ZnO thin films prepared by a sol-gel dip-coating method were investigated. X-ray diffraction analysis showed that the thin films were grown with a c-axis preferred orientation. The position of the (002) peak was almost the same in all samples, irrespective of the Co concentration. It is thus clear that Co doping had little effect on the position of the (002) peak. To confirm that Co2+ was substituted for Zn2+ in the wurtzite structure, optical measurements were conducted at room temperature by a UV-visible spectrometer. Three absorption peaks are apparent in the Co-doped ZnO thin films that do not appear for the undoped ZnO thin film. As the Co concentration was increased, absorption related to characteristic Co2+ transitions increased because three absorption band intensities and the area underneath the absorption wells between 500 and 700 nm increased with increasing Co concentration. The optical band gap and static dielectric constant decreased and the Urbach energy and extinction coefficient increased with increasing Co concentration.

Photo-oxidative doping in π-conjugated zig-zag chain of carbon atoms with sulfur-functional group

NASA Astrophysics Data System (ADS)

Ikeura-Sekiguchi, Hiromi; Sekiguchi, Tetsuhiro

2017-12-01

Photo-oxidative doping processes were studied for the trans-polyacetylene backbone with the -SCH3 side group as a chemically representative of the precisely controlled S-functionalized zig-zag graphene nanoribbon edge. Sulfur K-edge X-ray absorption near edge structure (XANES) spectroscopy indicates that photochemical reaction of S-CH3 with atmospheric O2 forms selectively oxidized products such as -S(O)CH3 and -SO3- bound to the polyacetylene (PA) backbone. Using the correlation between the oxidation states of sulfur and the XANES peak positions, the partial charge distribution of CH3Sδ+-PAδ- has been estimated. Such positively charged sulfur atoms can attract higher electronegative oxygen atoms and expect to enhance the photooxidization capabilities. The formation of the -SO3- side group is evidently responsible for hole doping into the PA backbone. The results can provide some strategy for area-selective and controllable doping processes of atomic-scale molecular systems with the assistance of UV light.

A Moral Foundation for Anti-Doping: How Far Have We Progressed? Where Are the Limits?

PubMed

Murray, Thomas H

2017-01-01

Clarity about the ethical justification of anti-doping is essential. In its absence, critics multiply and confusion abounds. Three broad reasons are typically offered in anti-doping's defense: to protect athletes' health; to promote fairness; and to preserve meaning and values in sport - what the World Anti-Doping Agency (WADA) Code refers to as the spirit of sport. Protecting health is itself an important value, but many sports encourage athletes to take significant risks. The case against doping is buttressed by concern for athletes' health, but it cannot be the sole foundation. Promoting fairness is vital in all sports as the metaphor of the level playing field attests. But playing fields can be leveled by providing performance-enhancing drugs to all competitors. When doping is prohibited, fairness is aided by effective anti-doping. But the fundamental justification for anti-doping is found in the meanings and values we pursue in and through sport. © 2017 S. Karger AG, Basel.

Dual doped monolayer and bilayer graphene: The case of 4p and 2p elements

NASA Astrophysics Data System (ADS)

Denis, Pablo A.; Iribarne, Federico

2016-08-01

4p/2p dual-doped monolayer and bilayer graphene were studied via first principle calculations. Generally, dopants prefer to be agglomerated. A second dopant significantly reduces formation energies. Thus, partially reduced graphene oxide would favor substitutional doping by facilitating the introduction of the 4p dopants. Dual-doping can tune the band gap from 0.1 to 0.8 eV. For bilayer graphene, large atomic radii elements (Gallium and Germanium) form interlayer bonds with the undoped sheet. For some dual-doped graphenes, interlayer GaC and GeC bonds were formed, increasing the chemical reactivity of the undoped layer and affecting its electronic structure, with metallic or semiconducting characters observed.

Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

NASA Astrophysics Data System (ADS)

Korhonen, E.; Prozheeva, V.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; White, M. E.; Galazka, Z.; Liu, H.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2015-02-01

We present positron annihilation results on Sb-doped SnO2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO2 the concentrations appear too low to cause significant compensation.

Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects

NASA Astrophysics Data System (ADS)

Hamzah, Afiq; Hamid, Fatimah A.; Ismail, Razali

2016-12-01

An explicit solution for long-channel surrounding-gate (SRG) MOSFETs is presented from intrinsic to heavily doped body including the effects of interface traps and fixed oxide charges. The solution is based on the core SRGMOSFETs model of the Unified Charge Control Model (UCCM) for heavily doped conditions. The UCCM model of highly doped SRGMOSFETs is derived to obtain the exact equivalent expression as in the undoped case. Taking advantage of the undoped explicit charge-based expression, the asymptotic limits for below threshold and above threshold have been redefined to include the effect of trap states for heavily doped cases. After solving the asymptotic limits, an explicit mobile charge expression is obtained which includes the trap state effects. The explicit mobile charge model shows very good agreement with respect to numerical simulation over practical terminal voltages, doping concentration, geometry effects, and trap state effects due to the fixed oxide charges and interface traps. Then, the drain current is obtained using the Pao-Sah's dual integral, which is expressed as a function of inversion charge densities at the source/drain ends. The drain current agreed well with the implicit solution and numerical simulation for all regions of operation without employing any empirical parameters. A comparison with previous explicit models has been conducted to verify the competency of the proposed model with the doping concentration of 1× {10}19 {{cm}}-3, as the proposed model has better advantages in terms of its simplicity and accuracy at a higher doping concentration.

On Defect Cluster Aggregation and Non-Reducibilty in Tin-Doped Indium Oxide

NASA Astrophysics Data System (ADS)

Warschkow, Oliver; Ellis, Donald E.; Gonzalez, Gabriela; Mason, Thomas O.

2003-03-01

The conductivity of tin-doped indium oxide (ITO), a transparent conductor, is critically dependent on the amount of tin-doping and oxygen partial pressure during preparation and annealing. Frank and Kostlin (Appl. Phys. A 27 (1982) 197-206) rationalized the carrier concentration dependence by postulating the formation of two types of neutral defect clusters at medium tin-doping levels: "Reducible" and "non-reducible" defect clusters; so named to indicate their ability to create carriers under reduction. According to Frank and Kostlin, both are composed of a single oxygen interstitial and two tin atoms substituting for indium, positioned in non-nearest and nearest coordination, respectively. This present work, seeking to distinguish reducible and non-reducible clusters by use of an atomistic model, finds only a weak correlation of oxygen interstitial binding energies with the relative positioning of dopants. Instead, the number of tin-dopants in the vicinity of the interstitial has a much larger effect on how strongly it is bound, a simple consequence of Coulomb interactions. We postulate that oxygen interstitials become non-reducible when clustered with three or more Sn_In. This occurs at higher doping levels as reducible clusters aggregate and share tin atoms. A simple probabilistic model, estimating the average number of clusters so aggregated, provides a qualitatively correct description of the carrier density in reduced ITO as a function of Sn doping level.

Positronium formation at Si surfaces

NASA Astrophysics Data System (ADS)

Kawasuso, A.; Maekawa, M.; Miyashita, A.; Wada, K.; Kaiwa, T.; Nagashima, Y.

2018-06-01

Positronium formation at Si(111) and Si(001) surfaces has been investigated by changing the doping level systematically over the range 300-1000 K. The temperature dependence of the positronium fraction varied with the doping condition, and there were practically no differences between the two surface orientations. In heavily doped n -type Si (n ≳1018cm-3) , the positronium fraction (IPs) increased above 700 K and reached more than 95% at 1000 K. In undoped and lightly doped Si (n , p ≲1015cm-3 ), IPs decreased from 300 to 500 K and increased above 700 K. In heavily doped p -type Si (p ≳1018cm-3 ), IPs increased in two steps: one at 500-600 K and one above 700 K. Overall, the positronium fraction increased with the amount of n -type doping. These phenomena were found to be dominated by two kinds of positronium with energies of 0.6-1.5 eV and 0.1-0.2 eV, which were attributed to the work-function mechanism and the surface-positron-mediated process, respectively, with contributions from conduction electrons. The positron work function was estimated to be positive. This agrees with first-principles calculation. The positive positron work function implies that the formation of excitonic electron-positron bound states begins in the bulk subsurface region and transits to the final positronium state in the vacuum.

Static and dynamic properties of heavily doped quantum vortices

NASA Astrophysics Data System (ADS)

Pshenichnyuk, I. A.

2017-10-01

Quantum vortices in superfluids may capture matter and deposit it inside their core. By doping vortices with foreign particles one can effectively visualize them and study them experimentally. To acquire a better understanding of the interaction between quantum vortices and matter, and clarify the details of recent experiments, the properties of doped vortices are investigated here theoretically in the regimes where the doping mass becomes close to the total mass of superfluid particles forming a vortex. Such formations are dynamically stable and, possessing both vorticity and enhanced inertia, demonstrate properties that are different from the pure vortex case. The goal of this paper is to define and investigate the universal aspects of heavily doped vortex behavior, which can be realized in different types of quantum mixtures. The proposed 3D model is based on a system of coupled semiclassical matter wave equations that are solved numerically in a wide range of physical parameters. The size, geometry and binding energy of dopants in different regimes are discussed. The coupled motion of a vortex-dopant complex and decoupling conditions are studied. The reconnection of vortices, taken as an example of a fundamental process responsible for the evolution of a quantum turbulent state, is modeled to illustrate the difference between the light and heavy doping cases.

Influence of impurities on the high temperature conductivity of SrTiO3

NASA Astrophysics Data System (ADS)

Bowes, Preston C.; Baker, Jonathon N.; Harris, Joshua S.; Behrhorst, Brian D.; Irving, Douglas L.

2018-01-01

In studies of high temperature electrical conductivity (HiTEC) of dielectrics, the impurity in the highest concentration is assumed to form a single defect that controls HiTEC. However, carrier concentrations are typically at or below the level of background impurities, and all impurities may complex with native defects. Canonical defect models ignore complex formation and lump defects from multiple impurities into a single effective defect to reduce the number of associated reactions. To evaluate the importance of background impurities and defect complexes on HiTEC, a grand canonical defect model was developed with input from density functional theory calculations using hybrid exchange correlation functionals. The influence of common background impurities and first nearest neighbor complexes with oxygen vacancies (vO) was studied for three doping cases: nominally undoped, donor doped, and acceptor doped SrTiO3. In each case, conductivity depended on the ensemble of impurity defects simulated with the extent of the dependence governed by the character of the dominant impurity and its tendency to complex with vO. Agreement between simulated and measured conductivity profiles as a function of temperature and oxygen partial pressure improved significantly when background impurities were included in the nominally undoped case. Effects of the impurities simulated were reduced in the Nb and Al doped cases as both elements did not form complexes and were present in concentrations well exceeding all other active impurities. The influence of individual impurities on HiTEC in SrTiO3 was isolated and discussed and motivates further experiments on singly doped SrTiO3.

Examination of Factors Explaining Coaching Strategy and Training Methodology as Correlates of Potential Doping Behavior in High-Level Swimming

PubMed Central

Liposek, Silvester; Zenic, Natasa; Saavedra, Jose M; Sekulic, Damir; Rodek, Jelena; Marinsek, Miha; Sajber, Dorica

2018-01-01

Although coaching is considered an important determinant of athletes’ potential doping behavior (PDB), there is an evident lack of studies that have examined coaching-strategy-and-training-methodology (CS&TM) in relation to PDB. This study was aimed to identify the specific associations that may exist between CS&TM -factors and other factors, and PDB in high-level swimming. The sample comprised 94 swimmers (35 females; 19.7 ± 2.3 years of age) and consisted of swimmers older than 18 years who participated in the 2017 National Championship. Variables were collected by previously validated questionnaires, with the addition of questions where athletes were asked about CS&TM to which they had been exposed. Multinomial logistic regression was applied for the criterion PDB (Negative PDB – Neutral PDB – Positive PDB). The higher risk for positive-PDB was found in males (OR: 6.58; 95%CI: 1.01-9.12); therefore, all regressions were adjusted for gender. Those swimmers who achieved better competitive result were less prone to neutral-PDB (0.41; 0.17-0.98). The positive-PDB was evidenced in those swimmers who perceived that their training was monotonous and lacked diversity (1.82; 1.41-5.11), and who were involved in training which was mostly oriented toward volume (1.76; 1.11-7.12). The lower likelihood of positive-PDB is found in those who replied that technique is practiced frequently (0.12; 0.01-0.81), those who replied that coach regularly provided the attention to explain the training aims (0.21; 0.04-0.81), and that coach frequently reviewed and discussed the quality of execution of specific tasks (0.41; 0.02-0.81). The findings on the relationships between the studied variables and PDB should be incorporated into targeted anti-doping efforts in swimming. Further studies examining sport-specific variables of CS&TM in younger swimmers and other sports are warranted. Key points The opinions about doping presence in swimming were not associated with athletes’ doping susceptibility, but a higher doping tendency is found in male swimmers Swimmers were generally more susceptible to doping if they perceived that their training lacked work on improvement and mastering of the swimming technique Those swimmers who are more prone to doping frequently stated that their coach did not provide the necessary attention to explain the training aims, and did not sufficiently review and discuss the quality of the athlete’s execution of specific tasks Results highlight importance of coaching strategy and training methodology as possible covariates of doping susceptibility in sports. PMID:29535581

Engineered gadolinium-doped carbon dots for magnetic resonance imaging-guided radiotherapy of tumors.

PubMed

Du, Fengyi; Zhang, Lirong; Zhang, Li; Zhang, Miaomiao; Gong, Aihua; Tan, Youwen; Miao, Jiawen; Gong, Yuhua; Sun, Mingzhong; Ju, Huixiang; Wu, Chaoyang; Zou, Shenqiang

2017-03-01

The effectiveness of radiotherapy can decrease due to inaccurate positioning of machinery and inherent radioresistance of tumors. To address this issue, we present a novel theranostic nanoplatform based on gadolinium-doped carbon dots (Gd-doped CDs) designed specifically for magnetic resonance imaging (MRI)-guided radiotherapy of tumors. The Gd-doped CDs (∼18 nm) with dispersibility in water and stable photoluminescence were synthesized via a one-step hydrothermal approach. After tail vein injection of the Gd-doped CDs, they exhibited a relatively long circulation time (∼6 h), enabled efficient passive tumor targeting. Gd-doped CDs accumulate in the kidney and could be cleared out of the body from bladder. Importantly, they exhibited favorable biocompatibility with excellent performance in longitudinal relaxivity rate (r 1 ) of 6.45 mM -1 S -1 and radiosensitization enhancements. These results show that Gd-doped CDs are excellent T 1 contrast agents and radiosensitizers, possessing great promise for MRI-guided radiotherapy of tumors. Copyright © 2016 Elsevier Ltd. All rights reserved.

Fast Response and Spontaneous Alignment in Liquid Crystals Doped with 12-Hydroxystearic Acid Gelators.

PubMed

Lin, Hui-Chi; Wang, Chih-Hung; Wang, Jyun-Kai; Tsai, Sheng-Feng

2018-05-07

The spontaneous vertical alignment of liquid crystals (LCs) in gelator (12-hydroxystearic acid)-doped LC cells was studied. Gelator-induced alignment can be used in both positive and negative LC cells. The electro-optical characteristics of the gelator-doped negative LC cell were similar to those of an LC cell that contained a vertically aligned (VA) host. The rise time of the gelator-doped LC cell was two orders of magnitude shorter than that of the VA host LC cell. The experimental results indicate that the gelator-induced vertical alignment of LC molecules occurred not only on the surface of the indium tin oxide (ITO) but also on the homogeneous alignment layer. Various LC alignments (planar, hybrid, multistable hybrid, and vertical alignments) were achieved by modulating the doped gelator concentrations. The multistable characteristic of LCs doped with the gelator is also presented. The alignment by doping with a gelator reduces the manufacturing costs and provides a means of fabricating fast-responding, flexible LC displays using a low-temperature process.

Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Yiping; Zhang, Zi-Hui; Tan, Swee Tiam; Hernandez-Martinez, Pedro Ludwig; Zhu, Binbin; Lu, Shunpeng; Kang, Xue Jun; Sun, Xiao Wei; Demir, Hilmi Volkan

2017-01-01

Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach.

Local atomic arrangement and scintillation properties of Eu- and Ce-doped NaYP{sub 2}O{sub 7}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novais, S.M.V., E-mail: suellen.mvn@gmail.com; Macedo, Z.S.

2016-01-15

Direct determination of rare earth location and local environment in NaYP{sub 2}O{sub 7} are presented. Undoped and Ln-doped NaYP{sub 2}O{sub 7} (Ln=Eu, Ce) were produced via PVA-assisted sol–gel method. Lattice parameters were determined from Rietveld refinement, showing monoclinic structure. XAS results suggested Eu{sup 3+} and Ce{sup 3+} are incorporated into NaYP{sub 2}O{sub 7} host in substitution to Y{sup 3+} site, with first coordination shell formed by six oxygen ions. Measurements at Eu edge showed a single peak in R space for Eu–O distribution. In this case, uniform interatomic distances implied to absence of significant disorder. Analysis at Ce edge presentedmore » different behavior, with Ce–O distribution characterized by a split peak in R space. Nearest neighborhood was found to be distributed with Ce occupying an off-center position in Y site. Under X-ray excitation, {sup 5}D{sub 0}→{sup 7}F{sub J} emission lines of Eu{sup 3+} were identified for NaYP{sub 2}O{sub 7}:Eu. NaYP{sub 2}O{sub 7}:Ce presented a broad emission formed by 5d→{sup 2}F{sub J} transitions of Ce{sup 3+}, with the superposition attributed to the effect of distorted oxygen octahedra around the dopant ions. - Graphical abstract: EuO{sub 6} and CeO{sub 6} octahedral arrangement relative to Y site in NaYP{sub 2}O{sub 7} host, and XEOL emission of corresponding doped samples. - Highlights: • Lattice parameters of NaYP{sub 2}O{sub 7} undoped sample confirmed monoclinic structure. • Dopants Eu and Ce are incorporated in the trivalent state. • Local order of Eu{sup 3+} and Ce{sup 3+} dopants substituting Y{sup 3+} consist of octahedral symmetry. • Off-center displacement in the case of Ce{sup 3+} position was discussed. • Luminescent properties under X-ray excitation may allow practical applications.« less

History of mass spectrometry at the Olympic Games.

PubMed

Hemmersbach, Peter

2008-07-01

Mass spectrometry has played a decisive role in doping analysis and doping control in human sport for almost 40 years. The standard of qualitative and quantitative determinations in body fluids has always attracted maximum attention from scientists. With its unique sensitivity and selectivity properties, mass spectrometry provides state-of-the-art technology in analytical chemistry. Both anti-doping organizations and the athletes concerned expect the utmost endeavours to prevent false-positive and false-negative results of the analytical evidence. The Olympic Games play an important role in international sport today and are milestones for technical development in doping analysis. This review of the part played by mass spectrometry in doping control from Munich 1972 to Beijing 2008 Olympics gives an overview of how doping analysis has developed and where we are today. In recognizing the achievements made towards effective doping control, it is of the utmost importance to applaud the joint endeavours of the World Anti-Doping Agency, the International Olympic Committee, the international federations and national anti-doping agencies to combat doping. Advances against the misuse of prohibited substances and methods, which are performance-enhancing, dangerous to health and violate the spirit of sport, can be achieved only if all the stakeholders work together. Copyright 2008 John Wiley & Sons, Ltd.

Morphological Effect of Doping Environment on Silicon Nanowires Grown by Plasma-Assisted Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Lohn, Andrew J.; Cormia, Robert D.; Fryauf, David M.; Zhang, Junce; Norris, Kate J.; Kobayashi, Nobuhiko P.

2012-11-01

Physical properties of semiconductor nanowires are tied intimately to their specific morphologies such as length and diameter. We studied the growth of silicon nanowires and found their lengths and diameters to vary over orders of magnitude in different doping environments. In all cases we examined, doping resulted in increased diameters. In addition, boron doping was found to accelerate volume growth rate while arsenic and antimony both appeared to slow it down. We further studied the formation of the native oxides that cover the nanowires. X-ray photoelectron spectroscopy indicated that properties of the native oxides are also dependent on doping environment and correlated to doping-dependent shifts in apparent binding energy of the Si 2p3/2 peak illustrating that the electronic contribution is the dominant mechanism for the oxide growth.

Hydrogen sensor based on Sm-doped SnO{sub 2} nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Gurpreet; Hastir, Anita; Singh, Ravi Chand, E-mail: ravichand.singh@gmail.com

2016-05-23

In this paper the effect of samarium doping on the structural and hydrogen gas sensing properties of SnO{sub 2} nanoparticles has been reported. X-ray Diffraction (XRD) results revealed tetragonal rutile structure of both undoped and Sm-doped SnO{sub 2} nanoparticles. It has been observed that doping with samarium led to reduction in crystallite size of SnO{sub 2} nanoparticles which was confirmed from XRD analysis. Shifting and broadening of Raman peaks in case of doped nanoparticles has been explained by well-known phonon confinement model. The optimum operable temperature of both the sensors was found to 400 °C and the sensor response towardsmore » hydrogen gas has been improved after doping with samarium which was attributed to increase in sensing sites for the gas adsorption.« less

High-power thulium-doped fibre laser with intracavity dispersion management

NASA Astrophysics Data System (ADS)

Krylov, Aleksandr A.; Chernyshova, M. A.; Chernykh, D. S.; Senatorov, A. K.; Tupitsyn, I. M.; Kryukov, P. G.; Dianov, Evgenii M.

2012-05-01

This paper reports a scheme for the generation and amplification of pico- and femtosecond pulses in the range 1.93-1.97 μm using thulium-doped silica fibres. Group velocity dispersion (GVD) management in the cavity of the thulium-doped fibre laser oscillator is ensured by a single-mode germanosilicate fibre (75 mol % GeO2 in the core) with a positive GVD. Pulses are obtained down to 200 fs in duration and up to 56 nJ in energy.

Very fast doped LaBr.sub.3 scintillators and time-of-flight PET

DOEpatents

Shah, Kanai S.

2006-10-31

The present invention concerns very fast scintillator materials capable of resolving the position of an annihilation event within a portion of a human body cross-section. In one embodiment, the scintillator material comprises LaBr.sub.3 doped with cerium. Particular attention is drawn to LaBr.sub.3 doped with a quantity of Ce that is chosen for improving the timing properties, in particular the rise time and resultant timing resolution of the scintillator, and locational capabilities of the scintillator.

Molecular adsorption of hydrogen peroxide on N- and Fe-doped titania nanoclusters

NASA Astrophysics Data System (ADS)

Mohajeri, Afshan; Dashti, Nasimeh Lari

2017-06-01

Titanium dioxide (titania) nanoparticles have been extensively investigated for photocatalytic applications such as the decomposition and adsorption of pollutant and undesirable compound in air and waste water. In this context, the present article reports the molecular adsorption of hydrogen peroxide on the surface of doped titania clusters. Density functional theory calculations were performed to investigate the structures and electronic properties of two nanoscale (TiO2)n clusters (n = 5,6) modified by nitrogen and iron dopants. The relative stability of all possible N-doped and Fe-doped isomers has been compared with each other and with the parent cluster. It was found that the Fe-doped clusters are in general more stable than the N-doped counterparts. Moreover, after N/Fe doping an enhanced in the magnetization of the clusters is observed. In the second part, we have investigated different modes of H2O2 adsorption on the lowest-energy isomers of doped clusters. In almost all the cases, the adsorptions on the doped clusters are found to be less exothermic than on the corresponding undoped parent cluster. Our results highlight the essential role of charge transfer into the interaction between H2O2 and doped (TiO2)n clusters, especially for Fe-doped clusters.

True Dopers or Negligent Athletes? An Analysis of Anti-Doping Rule Violations Reported to the World Anti-Doping Agency 2010-2012.

PubMed

de Hon, Olivier; van Bottenburg, Maarten

2017-12-06

The sanction that an athlete receives when an anti-doping rule violation has been committed depends on the specific circumstances of the case. Anti-doping tribunals decide on the final sanction, following the rules of the World Anti-Doping Code. To assess the athletes' degree of fault based on the length of sanctions imposed on them to feed policy-related discussions. Analysing data from the results management database of the World Anti-Doping Agency for anonymous information of anti-doping rule violations in eight selected sports covering the years 2010-2012. Four out of ten athletes who committed an anti-doping rule violation received a suspension that was lower than the standard. This is an indication that tribunals in many instances are not convinced that the athletes concerned were completely at fault, that mitigating circumstances were applicable, or that full responsibility of the suspected violation should not be held against them. Anabolic agents, peptide hormones, and hormone modulators lead to higher sanctions, as do combinations of several anti-doping rule violations. This first analysis of information from the World Anti-Doping Agency's results management database indicates that a large proportion of the athletes who commit anti-doping rule violations may have done this unintentionally. Anti-doping professionals should strive to improve this situation in various ways.

Ferromagnetism in doped or undoped spintronics nanomaterials

NASA Astrophysics Data System (ADS)

Qiang, You

2010-10-01

Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

Conductive Boron-Doped Graphene as an Ideal Material for Electrocatalytically Switchable and High-Capacity Hydrogen Storage.

PubMed

Tan, Xin; Tahini, Hassan A; Smith, Sean C

2016-12-07

Electrocatalytic, switchable hydrogen storage promises both tunable kinetics and facile reversibility without the need for specific catalysts. The feasibility of this approach relies on having materials that are easy to synthesize, possessing good electrical conductivities. Graphitic carbon nitride (g-C 4 N 3 ) has been predicted to display charge-responsive binding with molecular hydrogen-the only such conductive sorbent material that has been discovered to date. As yet, however, this conductive variant of graphitic carbon nitride is not readily synthesized by scalable methods. Here, we examine the possibility of conductive and easily synthesized boron-doped graphene nanosheets (B-doped graphene) as sorbent materials for practical applications of electrocatalytically switchable hydrogen storage. Using first-principle calculations, we find that the adsorption energy of H 2 molecules on B-doped graphene can be dramatically enhanced by removing electrons from and thereby positively charging the adsorbent. Thus, by controlling charge injected or depleted from the adsorbent, one can effectively tune the storage/release processes which occur spontaneously without any energy barriers. At full hydrogen coverage, the positively charged BC 5 achieves high storage capacities up to 5.3 wt %. Importantly, B-doped graphene, such as BC 49 , BC 7 , and BC 5 , have good electrical conductivity and can be easily synthesized by scalable methods, which positions this class of material as a very good candidate for charge injection/release. These predictions pave the route for practical implementation of electrocatalytic systems with switchable storage/release capacities that offer high capacity for hydrogen storage.

Realizing luminescent downshifting in ZnO thin films by Ce doping with enhancement of photocatalytic activity

NASA Astrophysics Data System (ADS)

Narayanan, Nripasree; Deepak, N. K.

2018-04-01

ZnO thin films doped with Ce at different concentration were deposited on glass substrates by spray pyrolysis technique. XRD analysis revealed the phase purity and polycrystalline nature of the films with hexagonal wurtzite geometry and the composition analysis confirmed the incorporation of Ce in the ZnO lattice in the case of doped films. Crystalline quality and optical transmittance diminished while electrical conductivity enhanced with Ce doping. Ce doping resulted in a red-shift of optical energy gap due to the downshift of the conduction band minimum after merging with Ce related impurity bands formed below the conduction band in the forbidden gap. In the room temperature photoluminescence spectra, UV emission intensity of the doped films decreased while the intensity of the visible emission band increased drastically implying the degradation in crystallinity as well as the incorporation of defect levels capable of luminescence downshifting. Ce doping showed improvement in photocatalytic efficiency by effectively trapping the free carriers and then transferring for dye degradation. Thus Ce doped ZnO thin films are capable of acting as luminescent downshifters as well as efficient photocatalysts.

Adverse analytical findings with clenbuterol among U-17 soccer players attributed to food contamination issues.

PubMed

Thevis, Mario; Geyer, Lina; Geyer, Hans; Guddat, Sven; Dvorak, Jiri; Butch, Anthony; Sterk, Saskia S; Schänzer, Wilhelm

2013-05-01

The illicit use of growth promoters in animal husbandry has frequently been reported in the past. Among the drugs misused to illegally increase the benefit of stock farming, clenbuterol has held a unique position due to the substance's composition, mechanism of action, metabolism, and disposition. Particularly clenbuterol's disposition in animals' edible tissues destined for food production can cause considerable issues on consumption by elite athletes registered in national and international doping control systems as demonstrated in this case-related study. Triggered by five adverse analytical findings with clenbuterol among the Mexican national soccer team in out-of-competition controls in May 2011, the Fédération Internationale de Football Association (FIFA) initiated an inquest into a potential food contamination (and thus sports drug testing) problem in Mexico, the host country of the FIFA U-17 World Cup 2011. Besides 208 regular doping control samples, which were subjected to highly sensitive mass spectrometric test methods for anabolic agents, 47 meat samples were collected in team hotels during the period of the tournament and forwarded to Institute of Food Safety, RIKILT. In 14 out of 47 meat samples (30%), clenbuterol was detected at concentrations between 0.06 and 11 µg/kg. A total of 109 urine samples out of 208 doping control specimens (52%) yielded clenbuterol findings at concentrations ranging from 1-1556 pg/ml, and only 5 out of 24 teams provided urine samples that did not contain clenbuterol. At least one of these teams was on a strict 'no-meat' diet reportedly due to the known issue of clenbuterol contamination in Mexico. Eventually, owing to the extensive evidence indicating meat contamination as the most plausible reason for the extraordinary high prevalence of clenbuterol findings, none of the soccer players were sanctioned. However, elite athletes have to face severe consequences when testing positive for a prohibited anabolic agent and sufficient supporting information corroborating the scenario of inadvertent ingestion are required to be acquitted from anti-doping rule violations. Hence, governmental contribution is urgently needed to combat the illegal use of clenbuterol in stock breading. Copyright © 2013 John Wiley & Sons, Ltd.

Connecting Dopant Bond Type with Electronic Structure in N-Doped Graphene

DTIC Science & Technology

2012-06-29

dopant forms one σ-bond with its C neighbor, forms σ-bonds to two H (or one N-lone-pair orbital in the unhydrogenated case). Two electrons go into the...pyridinic groups (Table 1), the additional charge from nitrogen is forced to go to the extended carbon π-network, essentially neutralizing the p-doping...T.; Bouchet-Fabre, B.; Granier, A.; Turban, G. XPS and NEXAFS characterisation of plasma deposited vertically aligned N-doped MWCNT . Diamond Relat

Effect of Li doping on the electric and pyroelectric properties of ZnO thin films

NASA Astrophysics Data System (ADS)

Trinca, L. M.; Galca, A. C.; Boni, A. G.; Botea, M.; Pintilie, L.

2018-01-01

Un-doped ZnO (UDZO) and Li-doped ZnO (LZO) polycrystalline thin films were grown on platinized silicon by pulsed laser deposition (PLD). The electrical properties were investigated on as-grown and annealed UDZO and LZO films with capacitor configuration, using top and bottom platinum electrodes. In the case of the as-grown films it was found that the introduction of Li increases the resistivity of ZnO and induces butterfly shape in the C-V characteristic, suggesting ferroelectric-like behavior in LZO films. The properties of LZO samples does not significantly changes after thermal annealing while the properties of UDZO samples show significant changes upon annealing, manifested in a butterfly shape of the C-V characteristic and resistive-like switching. However, the butterfly shape disappears if long delay time is used in the C-V measurement, the characteristic remaining non-linear. Pyroelectric signal could be measured only on annealed films. Comparing the UDZO results with those obtained in the case of Li:ZnO, it was found that the pyroelectric properties are considerably enhanced by Li doping, leading to pyroelectric signal with about one order of magnitude larger at low modulation frequencies than for un-doped samples. Although the results of this study hint towards a ferroelectric-like behavior of Li doped ZnO, the presence of real ferroelectricity in this material remains controversial.

Doping Nitrogen in InGaZnO Thin Film Transistor with Double Layer Channel Structure.

PubMed

Chang, Sheng-Po; Shan, Deng

2018-04-01

This paper presents the electrical characteristics of doping nitrogen in an amorphous InGaZnO thin film transistor. The IGZO:N film, which acted as a channel layer, was deposited using RF sputtering with a nitrogen and argon gas mixture at room temperature. The optimized parameters of the IGZO:N/IGZO TFT are as follows: threshold voltage is 0.5 V, field effect mobility is 14.34 cm2V-1S-1. The on/off current ratio is 106 and subthreshold swing is 1.48 V/decade. The positive gate bias stress stability of InGaZnO doping with nitrogen shows improvement compared to doping with oxygen.

Correlation of doping, structure, and carrier dynamics in a single GaN nanorod

NASA Astrophysics Data System (ADS)

Zhou, Xiang; Lu, Ming-Yen; Lu, Yu-Jung; Gwo, Shangjr; Gradečak, Silvija

2013-06-01

We report the nanoscale optical investigation of a single GaN p-n junction nanorod by cathodoluminescence (CL) in a scanning transmission electron microscope. CL emission characteristic of dopant-related transitions was correlated to doping and structural defect in the nanorod, and used to determine p-n junction position and minority carrier diffusion lengths of 650 nm and 165 nm for electrons and holes, respectively. Temperature-dependent CL study reveals an activation energy of 19 meV for non-radiative recombination in Mg-doped GaN nanorods. These results directly correlate doping, structure, carrier dynamics, and optical properties of GaN nanostructure, and provide insights for device design and fabrication.

Niobium Doping Effects on TiO2 Mesoscopic Electron Transport Layer-Based Perovskite Solar Cells.

PubMed

Kim, Dong Hoe; Han, Gill Sang; Seong, Won Mo; Lee, Jin-Wook; Kim, Byeong Jo; Park, Nam-Gyu; Hong, Kug Sun; Lee, Sangwook; Jung, Hyun Suk

2015-07-20

Perovskite solar cells (PSCs) are the most promising candidates as next-generation solar energy conversion systems. To design a highly efficient PSC, understanding electronic properties of mesoporous metal oxides is essential. Herein, we explore the effect of Nb doping of TiO2 on electronic structure and photovoltaic properties of PSCs. Light Nb doping (0.5 and 1.0 at %) increased the optical band gap slightly, but heavy doping (5.0 at %) distinctively decreased it. The relative Fermi level position of the conduction band is similar for the lightly Nb-doped TiO2 (NTO) and the undoped TiO2 whereas that of the heavy doped NTO decreased by as much as ∼0.3 eV. The lightly doped NTO-based PSCs exhibit 10 % higher efficiency than PSCs based on undoped TiO2 (from 12.2 % to 13.4 %) and 52 % higher than the PSCs utilizing heavy doped NTO (from 8.8 % to 13.4 %), which is attributed to fast electron injection/transport and preserved electron lifetime, verified by transient photocurrent decay and impedance studies. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhancement of ORR catalytic activity by multiple heteroatom-doped carbon materials.

PubMed

Kim, Dae-wook; Li, Oi Lun; Saito, Nagahiro

2015-01-07

Heteroatom-doped carbon matrices have been attracting significant attention due to their superior electrochemical stability, light weight and low cost. Hence, in this study, various types of heteroatom, including single dopants of N, B and P and multiple dopants of B-N and P-N with a carbon matrix were synthesized by an innovative method named the solution plasma process. The heteroatom was doped into the carbon matrix during the discharge process by continuous dissociation and recombination of precursors. The chemical bonding structure, ORR activity and electrochemical performance were compared in detail for each single dopant and multiple dopants. According to the Raman spectra, the carbon structures were deformed by the doped heteroatoms in the carbon matrix. In comparison with N-doped structures (NCNS), the ORR potential of PN-doped structures (PNCNS) was positively shifted from -0.27 V to -0.24 V. It was observed that doping with N decreased the bonding between P and C in the matrix. The multiple doping induced additional active sites for ORR which further enhanced ORR activity and stability. Therefore, PNCNS is a promising metal-free catalyst for ORR at the cathode in a fuel cell.

Effect of impurities of selenium and iron on the Anderson localization of 1T-TaS 2

NASA Astrophysics Data System (ADS)

Ōnuki, Y.; Inada, R.; Tanuma, S.

1980-01-01

The temperature dependence of electrical resistivities θ( T) of 1T-TaS 2, 1T-TaS 2- xSe x and 1T-Fe xTa 1- xS 2 is found to be θ( T) ∝ exp( T0/ T) 1/n in the temperature range of 4 K to the measured lowest temperature, 0.1 K, showing the variable range hopping of Anderson localized states. The n-value is nearly 3 for selenium doping and nearly 2 for non-doping and iron doping. The positive magnetoresistance, which is sizable only in the temperature range of 2 K to 0.5 K in 1T-TaS 2, is found to be remarkably enhanced by the selenium doping, while the tendency is reversed by the iron doping.

Doping Among Professional Athletes in Iran: A Test of Akers's Social Learning Theory.

PubMed

Kabiri, Saeed; Cochran, John K; Stewart, Bernadette J; Sharepour, Mahmoud; Rahmati, Mohammad Mahdi; Shadmanfaat, Syede Massomeh

2018-04-01

The use of performance-enhancing drugs (PED) is common among Iranian professional athletes. As this phenomenon is a social problem, the main purpose of this research is to explain why athletes engage in "doping" activity, using social learning theory. For this purpose, a sample of 589 professional athletes from Rasht, Iran, was used to test assumptions related to social learning theory. The results showed that there are positive and significant relationships between the components of social learning theory (differential association, differential reinforcement, imitation, and definitions) and doping behavior (past, present, and future use of PED). The structural modeling analysis indicated that the components of social learning theory accounts for 36% of the variance in past doping behavior, 35% of the variance in current doping behavior, and 32% of the variance in future use of PED.

Theoretical study of nitrogen-doped graphene nanoflakes: Stability and spectroscopy depending on dopant types and flake sizes.

PubMed

Lin, Chih-Kai

2018-03-05

As nitrogen-doped graphene has been widely applied in optoelectronic devices and catalytic reactions, in this work we have investigated where the nitrogen atoms tend to reside in the material and how they affect the electron density and spectroscopic properties from a theoretical point of view. DFT calculations on N-doped hexagonal and rectangular graphene nanoflakes (GNFs) showed that nitrogen atoms locating on zigzag edges are obviously more stable than those on armchair edges or inside flakes, and interestingly, the N-hydrogenated pyridine moiety could be preferable to pure pyridine moiety in large models. The UV-vis absorption spectra of these nitrogen-doped GNFs display strong dependence on flake sizes, where the larger flakes have their major peaks in lower energy ranges. Moreover, the spectra exhibit different connections to various dopant types and positions: the graphitic-type dopant species present large variety in absorption profiles, while the pyridinic-type ones show extraordinary uniform stability and spectra independent of dopant positions/numbers and hence are hardly distinguishable from each other. © 2018 Wiley Periodicals, Inc. © 2018 Wiley Periodicals, Inc.

Electrical and optical properties of Si-doped Ga2O3

NASA Astrophysics Data System (ADS)

Li, Yin; Yang, Chuanghua; Wu, Liyuan; Zhang, Ru

2017-05-01

The charge densities, band structure, density of states, dielectric functions of Si-doped β-Ga2O3 have been investigated based on the density functional theory (DFT) within the hybrid functional HSE06. The heavy doping makes conduction band split out more bands and further influences the band structure. It decreases the band gap and changes from a direct gap to an indirect gap. After doping, the top of the valence bands is mainly composed by the O-2p states, Si-3p states and Ga-4p states and the bottom of the conduction bands is almost formed by the Si-3s, Si-3p and Ga-4s orbits. The anisotropic optical properties have been investigated by means of the complex dielectric function. After the heavy Si doping, the position of absorption band edges did not change much. The slope of the absorption curve descends and indicates that the absorption became more slow for Si-doped β-Ga2O3 than undoped one due to the indirect gap of Si-doped β-Ga2O3.

Fast Response and Spontaneous Alignment in Liquid Crystals Doped with 12-Hydroxystearic Acid Gelators

PubMed Central

Lin, Hui-Chi; Wang, Chih-Hung; Wang, Jyun-Kai; Tsai, Sheng-Feng

2018-01-01

The spontaneous vertical alignment of liquid crystals (LCs) in gelator (12-hydroxystearic acid)-doped LC cells was studied. Gelator-induced alignment can be used in both positive and negative LC cells. The electro-optical characteristics of the gelator-doped negative LC cell were similar to those of an LC cell that contained a vertically aligned (VA) host. The rise time of the gelator-doped LC cell was two orders of magnitude shorter than that of the VA host LC cell. The experimental results indicate that the gelator-induced vertical alignment of LC molecules occurred not only on the surface of the indium tin oxide (ITO) but also on the homogeneous alignment layer. Various LC alignments (planar, hybrid, multistable hybrid, and vertical alignments) were achieved by modulating the doped gelator concentrations. The multistable characteristic of LCs doped with the gelator is also presented. The alignment by doping with a gelator reduces the manufacturing costs and provides a means of fabricating fast-responding, flexible LC displays using a low-temperature process. PMID:29735937

Distribution of caffeine levels in urine in different sports in relation to doping control before and after the removal of caffeine from the WADA doping list.

PubMed

Van Thuyne, W; Delbeke, F T

2006-09-01

Caffeine concentrations were measured in the urine of 4633 athletes tested for doping control in the Ghent Doping Control Laboratory in 2004. Determination of these concentrations was done using an alkaline extraction with a mixture of dichloromethane and methanol (9 : 1; v/v) followed by high performance liquid chromatography and ultraviolet detection (HPLC-UV). The method was validated according to ISO 17 025 standards (International Organisation for Standardisation). Quantification was done by using a linear calibration curve in the range from 0 to 20 microg/ml. The limit of quantification (LOQ) was 0.10 microg/ml. Because the results were not normally distributed, transformation of the data was done to evaluate the difference in detected concentrations in several sports. This resulted in an overall average concentration of 1.12 +/- 2.68 microg/ml. Comparison of the most frequently tested sports in 2004 demonstrated that caffeine concentrations in samples originating from power lifters are significantly higher in comparison to urines taken in other sports. Also, a significant difference between caffeine concentrations found in cycling and concentrations found in other sports, including athletics and some ball sports, was observed. A comparison was made between results obtained in 2004 and results obtained before the removal of caffeine from the WADA (World Anti-Doping Agency) doping list indicating that average caffeine concentrations decreased after the withdrawal of caffeine from the list of prohibited substances. The overall percentage of positive samples between the two periods remained the same although the percentage of positive samples noticed in cycling increased after the removal of caffeine from the doping list.

Doping of AlxGa1-xN

NASA Astrophysics Data System (ADS)

Stampfl, C.; Van de Walle, Chris G.

1998-01-01

N-type AlxGa1-xN exhibits a dramatic decrease in the free-carrier concentration for x⩾0.40. Based on first-principles calculations, we propose that two effects are responsible for this behavior: (i) in the case of doping with oxygen (the most common unintentional donor), a DX transition occurs, which converts the shallow donor into a deep level; and (ii) compensation by the cation vacancy (VGa or VAl), a triple acceptor, increases with alloy composition x. For p-type doping, the calculations indicate that the doping efficiency decreases due to compensation by the nitrogen vacancy. In addition, an increase in the acceptor ionization energy is found with increasing x.

Electronic, magnetic and transport properties of transition metal-doped holely C2N-h2D nanoribbons

NASA Astrophysics Data System (ADS)

He, Jing-Jing; Guo, Yan-Dong; Yan, Xiao-Hong; Zeng, Hong-Li

2018-01-01

A novel layered two-dimensional graphene-like material C2N-h2D with evenly distributed holes and nitrogen atoms has been synthesized via a bottom-up wet-chemical reaction [Nat. Commun. 6, 6486 (2015)]. The presence of holes provides a ground for further functionalization by doping. By performing a first-principles study, we have doped transition metals at the center of the holes of C2N-h2D nanoribbons and explored their doping effects on electronic, magnetic and transport properties. It is found that the doping can essentially regulate the electronic properties of C2N-h2D nanoribbons. The metallic zigzag ribbon is tuned into a semiconductor for Mn, Fe and Co-doped cases, but half-metal for Ni-doping. This transition is derived from the peculiar band morphology which has a big band gap between the edge state and the higher band, so when the energy of the edge state is reduced by the impurity state, the band gap falls too and crosses the Fermi level. In contrast, the pristine semiconducting armchair C2N-h2D nanoribbon is changed into metallic. Different from the zigzag case, its physical mechanism originates from the hybridization of 3 d orbitals of transition metal atoms and the p orbitals of carbon and nitrogen atoms which introduces several resonant peaks at the Fermi level in the density of states. Furthermore, the magnetic moments of all doped materials are enhanced compared to the pristine structures but decrease as the atomic number of the transition metal atom increases. And the spin polarization of armchair C2N-h2D nanoribbon is increased, while that of the zigzag structure is decreased except the Ni-doped one which is completely spin-polarized suggesting great prospects in the future of spintronics and nanoelectronics.

Intended or Unintended Doping? A Review of the Presence of Doping Substances in Dietary Supplements Used in Sports.

PubMed

Martínez-Sanz, José Miguel; Sospedra, Isabel; Ortiz, Christian Mañas; Baladía, Eduard; Gil-Izquierdo, Angel; Ortiz-Moncada, Rocio

2017-10-04

The use of dietary supplements is increasing among athletes, year after year. Related to the high rates of use, unintentional doping occurs. Unintentional doping refers to positive anti-doping tests due to the use of any supplement containing unlisted substances banned by anti-doping regulations and organizations, such as the World Anti-Doping Agency (WADA). The objective of this review is to summarize the presence of unlabeled doping substances in dietary supplements that are used in sports. A review of substances/metabolites/markers banned by WADA in ergonutritional supplements was completed using PubMed. The inclusion criteria were studies published up until September 2017, which analyzed the content of substances, metabolites and markers banned by WADA. 446 studies were identified, 23 of which fulfilled all the inclusion criteria. In most of the studies, the purpose was to identify doping substances in dietary supplements. Substances prohibited by WADA were found in most of the supplements analyzed in this review. Some of them were prohormones and/or stimulants. With rates of contamination between 12 and 58%, non-intentional doping is a point to take into account before establishing a supplementation program. Athletes and coaches must be aware of the problems related to the use of any contaminated supplement and should pay special attention before choosing a supplement, informing themselves fully and confirming the guarantees offered by the supplement.

Rational design of mixed ionic and electronic conducting perovskite oxides for solid oxide fuel cell anode materials: A case study for doped SrTiO3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suthirakun, Suwit; Xiao, Guoliang; Ammal, Salai Cheettu

2014-01-01

The effect of p- and n-type dopants on ionic and electronic conductivity of SrTiO3 based perovskites were investigated both computationally and experimentally. Specifically, we performed density functional theory (DFT) calculations of Na- and La-doped SrTiO3 and Na- and Nb-doped SrTiO3 systems. Constrained ab initio thermodynamic calculations were used to evaluate the phase stability and reducibility of doped SrTiO3 under both oxidizing and reducing synthesis conditions, as well as under anodic solid oxide fuel cell (SOFC) conditions. The density of states (DOS) of these materials was analyzed to study the effects of p- and n-doping on the electronic conductivity. Furthermore, Na-more » and La-doped SrTiO3 and Na- and Nb-doped SrTiO3 samples were experimentally prepared and the conductivity was measured to confirm our computational predictions. The experimental observations are in very good agreement with the theoretical predictions that doping n-doped SrTiO3 with small amounts of p-type dopants promotes both the ionic and electronic conductivity of the material. This doping strategy is valid independent of p- and n-doping site and permits the synthesis of perovskite based mixed ionic/electronic conductors.« less

Effect of Mo-doping concentration on the physical behaviour of sprayed ZnO layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reddy, T. Sreenivasulu; Reddy, M. Vasudeva; Reddy, K. T. Ramakrishna, E-mail: ktrkreddy@gmail.com

2015-06-24

Mo-doped zinc oxide layers (MZO) have been prepared on cleaned glass substrates by chemical spray pyrolysis technique by varying Mo-doping concentration in the range, 0 – 5 at. %. The X-ray diffraction studies revealed that all the as prepared layers were polycrystalline in nature and exhibited wurtzite structure. The layers prepared with lower Mo-doping concentration (<2 at. %) were preferably oriented along the (100) plane, whereas in the case of higher Mo-doping concentration (>2 at. %), the films showed the (002) plane as the dominant peak. The optical analysis indicated that all the layers had an average optical transmittance ofmore » 80% in the visible region and the evaluated band gap varied in the range, 3.28 - 3.50 eV.« less

Back wall solar cell

NASA Technical Reports Server (NTRS)

Brandhorst, H. W., Jr. (Inventor)

1978-01-01

A solar cell is disclosed which comprises a first semiconductor material of one conductivity type with one face having the same conductivity type but more heavily doped to form a field region arranged to receive the radiant energy to be converted to electrical energy, and a layer of a second semiconductor material, preferably highly doped, of opposite conductivity type on the first semiconductor material adjacent the first semiconductor material at an interface remote from the heavily doped field region. Instead of the opposite conductivity layer, a metallic Schottky diode layer may be used, in which case no additional back contact is needed. A contact such as a gridded contact, previous to the radiant energy may be applied to the heavily doped field region of the more heavily doped, same conductivity material for its contact.

Enhanced optical, thermal and piezoelectric behavior in dye doped potassium acid phthalate (KAP) single crystal

NASA Astrophysics Data System (ADS)

Rao, G. Babu; Rajesh, P.; Ramasamy, P.

2017-06-01

Dye inclusion crystals have attracted researchers in the context of crystal growth for applications in solid state lasers. Pure and 0.1 mol% amaranth doped KAP single crystals, were grown from aqueous solutions by slow evaporation technique at room temperature. The grown crystals are up to the dimension of 12×10×3 mm3. Attempt is made to improve the growth rate, optical, piezoelectric and photoconductive properties of pure KAP single crystal with addition of amaranth dye as a dopant. Various characterization studies were made for both pure and dye doped KAP. Thermal stability of the crystals is tested from thermogravimetric and differential thermal analysis (TG/DTA). There is only one endothermic peak indicating decomposition point. Higher optical transparency for dye doped KAP crystal was identified from the UV-vis spectrum. Etching studies showed an improvement in the optical quality of the KAP crystal after doping with amaranth dye. The positive photoconductive nature is observed from both pure and amaranth doped KAP.

Chemical analysis of superconducting phase in K-doped picene

NASA Astrophysics Data System (ADS)

Kambe, Takashi; Nishiyama, Saki; Nguyen, Huyen L. T.; Terao, Takahiro; Izumi, Masanari; Sakai, Yusuke; Zheng, Lu; Goto, Hidenori; Itoh, Yugo; Onji, Taiki; Kobayashi, Tatsuo C.; Sugino, Hisako; Gohda, Shin; Okamoto, Hideki; Kubozono, Yoshihiro

2016-11-01

Potassium-doped picene (K3.0picene) with a superconducting transition temperature (T C) as high as 14 K at ambient pressure has been prepared using an annealing technique. The shielding fraction of this sample was 5.4% at 0 GPa. The T C showed a positive pressure-dependence and reached 19 K at 1.13 GPa. The shielding fraction also reached 18.5%. To investigate the chemical composition and the state of the picene skeleton in the superconducting sample, we used energy-dispersive x-ray (EDX) spectroscopy, MALDI-time-of-flight (MALDI-TOF) mass spectroscopy and x-ray diffraction (XRD). Both EDX and MALDI-TOF indicated no contamination with materials other than K-doped picene or K-doped picene fragments, and supported the preservation of the picene skeleton. However, it was also found that a magnetic K-doped picene sample consisted mainly of picene fragments or K-doped picene fragments. Thus, removal of the component contributing the magnetic quality to a superconducting sample should enhance the volume fraction.

Interplay of superconductivity and magnetic fluctuations in single crystals of BaFe2-xCoxAs2

NASA Astrophysics Data System (ADS)

Bag, Biplab; Kumar, Ankit; Banerjee, S. S.; Vinod, K.; Bharathi, A.

2018-04-01

We report unusual pinning response in optimally doped and overdoped single crystals of BaFe2-xCoxAs2. Here we use magneto-optical imaging technique to measure the local magnetization response which shows an unusual transformation from low temperature diamagnetic state to high temperature positive magnetization response. Our data suggests coexistence of magnetic fluctuation along with superconductivity in the optimally doped crystal. The strength of magnetic fluctuations is the strongest in the optimally doped compound with the highest Tc.

Fast and slow light property improvement in erbium-doped amplifier

NASA Astrophysics Data System (ADS)

Peng, P. C.; Wu, F. K.; Kao, W. C.; Chen, J.; Lin, C. T.; Chi, S.

2013-01-01

This work experimentally demonstrates improvement of the fast light property in erbium-doped amplifiers at room temperature. The difference between the signal power and the pump power associated with bending loss is used to control the signal power at the different positions of the erbium-doped fiber (EDF) to improve the fast light property. Periodic bending of the EDF increases the time advance of the probe signal by over 288%. Additionally, this concept also could improve the fast light property using coherent population oscillations in semiconductor optical amplifiers.

Controlling the Electronic Structure of Graphene Using Surface-adsorbate Interactions

DTIC Science & Technology

2015-07-21

substrate via n doping, with or without intercalation, suggests that the graphene-to-substrate interaction could be controlled dynamically. DOI : 10.1103...which form a Dirac cone and are degenerate at the Fermi level [1]. These states change in response to atoms adsorbed on top of graphene (doping) or when...coupling to the substrate is strong. In the case of graphene on metals, the energy of the Dirac cone can change as a result of interfacial doping, or

Tunable, rare earth-doped solid state lasers

DOEpatents

Emmett, John L.; Jacobs, Ralph R.; Krupke, William F.; Weber, Marvin J.

1980-01-01

Laser apparatus comprising combinations of an excimer pump laser and a rare earth-doped solid matrix, utilizing the 5d-4f radiative transition in a rare earth ion to produce visible and ultra-violet laser radiation with high overall efficiency in selected cases and relatively long radiative lifetimes.

Photoluminescence Studies of P-type Modulation Doped GaAs/AlGaAs Quantum Wells in the High Doping Regime

NASA Astrophysics Data System (ADS)

Wongmanerod, S.; Holtz, P. O.; Reginski, K.; Bugaiski, M.; Monemar, B.

The influence of high Be-acceptor doping on the modulation-doped GaAs/Al0.3Ga0.7As quantum wells structures has been optically studied by using the low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques.The modulation doped samples were grown by the molecular-beam epitaxy technique with a varying Be acceptor concentration ranging from 1×1018 to 8×1018cm-3. Several novels physical effects were observed. The main effect is a significant shift of the main emission towards lower energies as the doping concentrations increase. There are two contradictory mechanisms, which determine the peak energy of the main emission; the shrinkage of the effective bandgap due to many body effects and the reduction of the exciton binding energy due to the carrier screening effect. We conclude that the first one is the dominating effect. At a sufficiently high doping concentration (roughly 2×1018cm-3), the lineshape of the main PL emission is modified, and a new feature, the so called Fermi-edge singularity (FES), appears on the high energy side of the PL emission and exhibits a blue-shift as a function of doping concentration. This feature has been found to be very sensitive to a temperature change, already in the range of 4.4-50K. In addition, PLE spectra with a suitable detection energy show that the absorption edge is blue-shifted with respect to the PL main emission. The resulting Stoke shift is due to phase-space-filling of the carriers, in agreement with the FES interpretation. Finally, we have found from the PLE spectra that the exciton quenching is initiated in the same doping regime. Compared to the exciton quenching in other p-type structures, the critical acceptor concentration required to quench the excitons is significantly lower than in the case of 2D structures with acceptor doping within the well, but larger than in the case of 3D bulk.

Visible light photocatalytic antibacterial activity of Ni-doped and N-doped TiO2 on Staphylococcus aureus and Escherichia coli bacteria.

PubMed

Ananpattarachai, Jirapat; Boonto, Yuphada; Kajitvichyanukul, Puangrat

2016-03-01

The Ni-doped and N-doped TiO2 nanoparticles were investigated for their antibacterial activities on Staphylococcus aureus (S. aureus) and Escherichia coli (E. coli) bacteria. Their morphological features and characteristics such as particle size, surface area, and visible light absorbing capacity were compared and discussed. Scanning electron microscopy, X-ray diffraction, and UV-visible spectrophotometry were used to characterize both materials. The inactivation of E. coli (as an example of Gram-negative bacteria) and S. aureus (as an example of Gram-positive bacteria) with Ni-doped and N-doped TiO2 was investigated in the absence and presence of visible light. Antibacterial activity tests were conducted using undoped, Ni-doped, and N-doped TiO2. The N-doped TiO2 nanoparticles show higher antibacterial activity than Ni-doped TiO2. The band gap narrowing of N-doped TiO2 can induce more visible light absorption and leads to the superb antibacterial properties of this material. The complete inactivation time for E. coli at an initial cell concentration of 2.7 × 10(4) CFU/mL was 420 min which is longer than the 360 min required for S. aureus inactivation. The rate of inactivation of S. aureus using the doped TiO2 nanoparticles in the presence of visible light is greater than that of E. coli. The median lethal dose (LD50) values of S. aureus and E. coli by antibacterial activity under an 18-W visible light intensity were 80 and 350 mg/ml for N-doped TiO2, respectively.

Psychological and social correlates of doping attitudes among Italian athletes.

PubMed

Zucchetti, Giulia; Candela, Filippo; Villosio, Carlo

2015-02-01

This study aims to identify the main psychological and social correlates of doping attitudes among Italian athletes. It is well recognized that athlete disposition and attitude towards doping is one of the factors responsible for doping behavior. Less is known, however, about the factors that sustain the level of athletes' attitudes towards doping. The main psychological (i.e., perfectionism, sport motivation, self-confidence and life satisfaction) and social correlates (i.e., social network and contact with people who use sports drugs) of attitudes towards doping among Italian athletes are examined in this paper. Differences are hypothesized regarding the type of sport (resistance sport vs. non-resistance sport) and athlete participation in competitive sport (i.e., agonistics) or in non-competitive sport (i.e., amateurs) on the level of attitude towards doping. The research hypothesis is that each of these constructs affects the level of athletes' attitudes toward doping. Data were collected from a sample of athletes (N=109), aged from 15 to 45 (M=31.5; SD=13.78) recruited in a Sports Medicine Center. Socio-demographic information, attitude towards doping, psychological and social variables were assessed through self-report questionnaire. Hierarchical multiple regression showed that both psychological (i.e., extrinsic motivation, perfectionism) and social variables (i.e., athletes' contact with doping users) were associated with athletes' attitudes towards doping. The results highlighted that athletes with excessive perfectionism, extrinsically motivated and who have contact with doping users have a positive attitude toward doping. Athletes who exhibit these characteristics should be considered at risk and monitored to prevent possible future sports drug use. Copyright © 2014 Elsevier B.V. All rights reserved.

Bipolar charge storage characteristics in copper and cobalt co-doped zinc oxide (ZnO) thin film.

PubMed

Kumar, Amit; Herng, Tun Seng; Zeng, Kaiyang; Ding, Jun

2012-10-24

The bipolar charge phenomenon in Cu and Co co-doped zinc oxide (ZnO) film samples has been studied using scanning probe microscopy (SPM) techniques. Those ZnO samples are made using a pulsed laser deposition (PLD) technique. It is found that the addition of Cu and Co dopants suppresses the electron density in ZnO and causes a significant change in the work function (Fermi level) value of the ZnO film; this results in the ohmic nature of the contact between the electrode (probe tip) and codoped sample, whereas this contact exhibits a Schottky nature in the undoped and single-element-doped samples. These results are verified by Kelvin probe force microscopy (KPFM) and ultraviolet photoelectron spectroscopy (UPS) measurements. It is also found that the co-doping (Cu and Co) can stabilize the bipolar charge, whereas Cu doping only stabilizes the positive charge in ZnO thin films.

Photoluminescence-detected magnetic-resonance study of fullerene-doped π-conjugated polymers

NASA Astrophysics Data System (ADS)

Lane, P. A.; Shinar, J.; Yoshino, K.

1996-10-01

X-band photoluminescence (PL)-detected magnetic resonance (PLDMR) spectra of C60- and C70-doped 2,5-dihexoxy poly(p-phenylenevinylene) (DHO-PPV), 2,5-dibutoxy poly(p-phenylene ethynylene) (DBO-PPE), and poly(3-dodecylthiophene) (P3DT) are described and discussed. While light doping of DHO-PPV by both fullerenes quenches the PL, both the polaron and triplet exciton resonances are dramatically enhanced. This is attributed to the creation of conformational defects which enhance the fission of 11Bu singlet excitons to polaron pairs and intersystem crossing to 13Bu triplet excitons. The triplet resonance in all polymers is quenched at relatively low doping levels of C60 and C70, which is attributed to quenching of triplets by positive polarons injected onto the polymer chain. Increased doping by C60, but not C70, quenches the polaron resonance, also due to photoinduced charge transfer.

Ultrasound accelerated Claisen Schmidt condensation: A green route to chalcones

NASA Astrophysics Data System (ADS)

Calvino, V.; Picallo, M.; López-Peinado, A. J.; Martín-Aranda, R. M.; Durán-Valle, C. J.

2006-06-01

Chalcones have been synthesized under sonochemical irradiation by Claisen-Schmidt condensation between benzaldehyde and acetophenone. Two basic activated carbons (Na and Cs-Norit) have been used as catalysts. The effect of the ultrasound activation has been studied. A substantial enhancing effect in the yield was observed when the carbon catalyst was activated under ultrasonic waves. This "green" method (combination of alkaline-doped carbon catalyst and ultrasound waves) has been applied to the synthesis of several chalcones with antibacterial properties achieving, in all cases, excellent activities and selectivities. A comparative study under non-sonic activation has showed that the yields are lower in silent conditions, indicating that the sonication exerts a positive effect on the activity of the catalyst. Cs-doped carbon is presented as the optimum catalyst, giving excellent activity for this type of condensation. Cs-Norit carbon catalyst can compete with the traditional NaOH/EtOH when the reaction is carried out under ultrasounds. The role of solvent in this reaction was studied with ethanol. High conversion was obtained in absence of solvent. The carbons were characterized by thermal analysis, nitrogen adsorption and X-ray photoelectron spectroscopy.

Magnetic properties of manganites doped with gallium, iron, and chromium ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Troyanchuk, I. O., E-mail: troyan@physics.by; Bushinsky, M. V.; Tereshko, N. V.

The magnetization and the crystal structure of the La{sub 0.7}Sr{sub 0.3}Mn{sub 1−x}M{sub x}O{sub 3} (M = Ga, Fe, Cr; x ≤ 0.3) systems are studied. The substitution of gallium and chromium is shown to cause phase separation into antiferromagnetic and ferromagnetic phases, whereas the substitution of iron for manganese stabilizes a spinglass state. The ferromagnetic phase in the chromium-substituted compositions is much more stable than that in the case of substitution by iron ions or diamagnetic gallium ions. The magnetic properties are explained in terms of the model of superexchange interactions and the localization of most e{sub g} electrons ofmore » manganese. The stabilization of ferromagnetism in the chromium-substituted compositions can be caused by the fact that the positive and negative contributions to the superexchange interaction between Mn{sup 3+} and Cr{sup 3+} ions are close to each other but the antiferromagnetic part of the exchange is predominant. Moreover, some chromium ions are in the tetravalent state, which maintains the optimum doping conditions.« less

Synthesis and nonlinear optical properties of zirconia-protected gold nanoparticles embedded in sol-gel derived silica glass

NASA Astrophysics Data System (ADS)

Le Rouge, A.; El Hamzaoui, H.; Capoen, B.; Bernard, R.; Cristini-Robbe, O.; Martinelli, G.; Cassagne, C.; Boudebs, G.; Bouazaoui, M.; Bigot, L.

2015-05-01

A new approach to dope a silica glass with gold nanoparticles (GNPs) is presented. It consisted in embedding zirconia-coated GNPs in a silica sol to form a doped silica gel. Then, the sol-doped nanoporous silica xerogel is densified leading to the formation of a glass monolith. The spectral position and shape of the surface plasmon resonance (SPR) reported around 520 nm remain compatible with small spherical GNPs in a silica matrix. The saturable absorption behavior of this gold/zirconia-doped silica glass has been evidenced by Z-scan technique. A second-order nonlinear absorption coefficient β of about -13.7 cm GW-1 has been obtained at a wavelength near the SPR of the GNPs.

The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

DOE PAGES

Venkatesh, S.; Baras, A.; Lee, J. -S.; ...

2016-03-24

Here, we studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (~40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetismmore » in doped/un-doped ZnO.« less

Optical spectroscopy of disordered Ca3Ga2Ge4O14 crystal doped with manganese

NASA Astrophysics Data System (ADS)

Burkov, Vladimir; Alyabyeva, Liudmila; Mill, Boris; Kotov, Viacheslav

2018-05-01

Circular dichroism, absorption and luminescence spectra of single crystalline manganese doped calcium gallogermanate Ca3Ga2Ge4O14:Mn were investigated in 300-850 nm wavelength region in wide temperature range 8-300 K. Careful analysis of experimental results revealed presence of electron transitions typical for sixfold coordinated trivalent manganese ions with d4 electron configuration. Thus, manganese ions doping the crystal matrix of CCG incorporate into lattice in 1a octahedral site-positions substituting Ga3+ ions. The results obtained were compared with investigation of isostructural to CGG manganese doped langasite crystals, La3Ga5SiO14:Mn where dopant is in octahedral Mn4+ state.

Electrical and Luminescent Properties of Color-Changeable Organic Electroluminescent Diode Using Squarylium Dyes

NASA Astrophysics Data System (ADS)

Mori, Tatsuo; Miyachi, Kiyokazu; Kichimi, Tomoaki; Mizutani, Teruyoshi

1994-12-01

The organic electoluminescent diode (LED) with squarylium (Sq) dye-doped Alq3 changes color upon application of voltage (current). The luminescent color from the organic LED changes from red (electroluminescence (EL) of Sq dye) at low voltage to light green (EL of Alq3) at high voltage. We studied the EL efficiency and EL spectrum of organic Sq-doped Alq3 LED with various doping positions in the emission layer. Consequentially, it was clarified that Sq doping near TPD considerably reduced the EL efficiency. The EL mechanism of the organic LED was concluded to be associated with the energy transfer from the excited Alq3 to the guest dye and hole trapping of the guest dye in Alq3.

Challenges and threats to implementing the fight against doping in sport.

PubMed

Dvorak, Jiri; Saugy, Martial; Pitsiladis, Yannis P

2014-05-01

Prominent doping cases in certain sports have recently raised public awareness of doping and reinforced the perception that doping is widespread. Efforts to deal with doping in sport have intensified in recent years, yet the general public believes that the 'cheaters' are ahead of the testers. Therefore, there is an urgent need to change the antidoping strategy. For example, the increase in the number of individual drug tests conducted between 2005 and 2012 was approximately 90 000 and equivalent to an increase of about 50%, yet the number of adverse analytical findings remained broadly the same. There is also a strikingly different prevalence of doping substances and methods in sports such as a 0.03% prevalence of anabolic steroids in football compared to 0.4% in the overall WADA statistics. Future efforts in the fight against doping should therefore be more heavily based on preventative strategies such as education and on the analysis of data and forensic intelligence and also on the experiences of relevant stakeholders such as the national antidoping organisations, the laboratories, athletes or team physicians and related biomedical support staff. This strategy is essential to instigate the change needed to more effectively fight doping in sport.

Questions of fairness and anti-doping in US cycling: The contrasting experiences of professionals and amateurs

PubMed Central

Henning, April D.; Dimeo, Paul

2015-01-01

Abstract The focus of researchers, media and policy on doping in cycling is often limited to the professional level of the sport. However, anti-doping test results since 2001 demonstrate that banned substances are also used by US cyclists at lower levels of the sport, necessitating a broader view of the patterns and motivations of substance use within the sport. In this article, we describe and explain the doping culture that has emerged in domestic US cycling among amateur and semi-professionals. Through analysis of records from sports governing bodies and journalistic reports, we assess the range of violation types and discuss the detection and punishing of riders who were not proven to have intended to cheat but became “collateral damage” in the war on doping. We argue that the phenomenon of doping is more complex than what has been shown to occur in elite sport, as it includes a wider variety of behaviours, situations and motivations. We develop fresh insights by examining cases where doping has been accidental, intrinsically motivated, non-performance enhancing or the result of prescribed medical treatments banned by anti-doping authorities. Such trends call into question the fairness of anti-doping measures, and we discuss the possibility of developing localised solutions to testing and sanctioning amateur athletes. PMID:26692658

[How reliable is the monitoring for doping?].

PubMed

Hüsler, J

1990-12-01

The reliability of the dope control, of the chemical analysis of the urine probes in the accredited laboratories and their decisions, is discussed using probabilistic and statistical methods. Basically, we evaluated and estimated the positive predictive value which means the probability that an urine probe contains prohibited dope substances given a positive test decision. Since there are not statistical data and evidence for some important quantities in relation to the predictive value, an exact evaluation is not possible, only conservative, lower bounds can be given. We found that the predictive value is at least 90% or 95% with respect to the analysis and decision based on the A-probe only, and at least 99% with respect to both A- and B-probes. A more realistic observation, but without sufficient statistical confidence, points to the fact that the true predictive value is significantly larger than these lower estimates.

Stark shift of impurity doped quantum dots: Role of noise

NASA Astrophysics Data System (ADS)

Arif, Sk. Md.; Bera, Aindrila; Ghosh, Anuja; Ghosh, Manas

2018-02-01

Present study makes a punctilious investigation of the profiles of Stark shift (SS) of doped GaAs quantum dot (QD) under the supervision of Gaussian white noise. A few physical parameters have been varied and the consequent variations in the SS profiles have been monitored. The said physical parameters comprise of magnetic field, confinement potential, dopant location, dopant potential, noise strength, aluminium concentration (only for AlxGa1-x As alloy QD), position-dependent effective mass (PDEM), position-dependent dielectric screening function (PDDSF), anisotropy, hydrostatic pressure (HP) and temperature. The SS profiles unfurl interesting features that heavily depend upon the particular physical quantity concerned, presence/absence of noise and the manner (additive/multiplicative) noise enters the system. The study highlights feasible means of maximizing SS of doped QD in presence of noise by suitable adjustment of several control parameters. The study deems importance in view of technological applications of QD devices where noise plays some prominent role.

Defect characterization in Mg-doped GaN studied using a monoenergetic positron beam

NASA Astrophysics Data System (ADS)

Uedono, A.; Ishibashi, S.; Tenjinbayashi, K.; Tsutsui, T.; Nakahara, K.; Takamizu, D.; Chichibu, S. F.

2012-01-01

Vacancy-type defects in Mg-doped GaN grown by metalorganic vapor phase epitaxy were probed using a monoenergetic positron beam. For a sample fabricated with a high H2-flow rate, before post-growth annealing the major defect species detected by positrons was identified as vacancy-clusters. Evidence suggested that other donor-type defects such as nitrogen vacancies also existed. The defects increased the Fermi level position, and enhanced the diffusion of positrons toward the surface. The annihilation of positrons at the top surface was suppressed by Mg-doping. This was attributed to the introduction of a subsurface layer (<6 nm) with a low defect concentration, where the Fermi level position was considered to decrease due to partial activation of Mg. For samples after annealing, the trapping of positrons by residual vacancy-type defects was observed, and the sample crystal quality was found to depend on that before annealing.

Electronic excitations in electron-doped cuprate superconductors

NASA Astrophysics Data System (ADS)

Unger, P.; Fulde, P.

1995-04-01

We calculate the electronic single-particle spectrum of an electron-doped cuprate superconductor such as Nd2-xCexCuO4-y. The dynamics of holes in the Cu-O planes is described by the extended Hubbard or Emery model. We consider the system at half-filling (one hole per unit cell, nh=1) and in the case of electron doping where the ground state is paramagnetic. The projection technique of Mori and Zwanzig is applied to derive the equations of motion for the Green's functions of Cu and O holes. These equations are solved self-consistently as in a previous calculation, where we considered the case of hole doping. At half-filling the system exhibits a charge-transfer gap bounded by Zhang-Rice singlet states and the upper Hubbard band. Upon electron doping the upper Hubbard band crosses the Fermi level and the system becomes metallic. With increasing electron doping the singlet band loses intensity and finally vanishes for nh=0. The corresponding spectral weight is transferred to the upper Hubbard band, which becomes a usual tight-binding band for zero hole concentration. The shape of the flat band crossing the Fermi level fits well to angle-resolved photoemission spectra of Nd2-xCexCuO4-y for x=0.15 and 0.22. Furthermore, our findings are in excellent agreement with exact diagonalization studies of 2×2 CuO2 cluster with periodic boundary conditions.

Chemical doping in pnictides superconductors: The case of Ca(Fe1-xXx) 2As2 , X = Co, Ni, Pt

NASA Astrophysics Data System (ADS)

Continenza, Alessandra; Profeta, Gianni

2018-04-01

We present a comparative and detailed study of transition metal doping in CaFe2As2. Comparing with several experimental results and carefully analyzing how the states at the Fermi level are affected by doping we show that: i) simulation of real doping and considering induces structural relaxations are crucial to correctly address the physical mechanisms induced by transition metal substitutions; ii) different dopant concentration induces changes on the band structure that can not be described within a simple rigid-band picture; iii) careful comparison with the available ARPES results shows that the main effects on band filling and symmetry can be caught within DFT.

Boron doping a semiconductor particle

DOEpatents

Stevens, G.D.; Reynolds, J.S.; Brown, L.K.

1998-06-09

A method of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried, with the boron film then being driven into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out into piles and melted/fused with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements. 2 figs.

Boron doping a semiconductor particle

DOEpatents

Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

1998-06-09

A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

Analysis of pure and malachite green doped polysulfone sample using FT-IR technique

NASA Astrophysics Data System (ADS)

Nayak, Rashmi J.; Khare, P. K.; Nayak, J. G.

2018-05-01

The sample of pure and malachite green doped Polysulfone in the form of foil was prepared by isothermal immersion technique. For the preparation of pure sample 4 gm of Polysulfone was dissolved in 50 ml of Dimethyl farmamide (DMF) solvent, while for the preparation of doped sample 10 mg, 50 mg and 100 mg Malachite Green was mixed with 4 gm of Polysulfone respectively. For the study of structural characterization of these pure and doped sample, Fourier Transform Infra-Red Spectroscopy (FT-IR) technique was used. This study shows that the intensity of transmittance decreases as the ratio of doping increases in pure polysulfone. The reduction in intensity of transmittance is clearly apparent in the present case more over the bands were broader which indicates towards charge transfer interaction between the donar and acceptor molecule.

Phase diagram of the isovalent phosphorous-substituted 122-type iron pnictides

DOE PAGES

Zhao, YuanYuan; Tai, Yuan -Yen; Ting, C. S.

2015-05-11

Recent experiments demonstrated that the isovalent doping system gives a similar phase diagram as the heterovalent doped cases. For example, with the phosphorous (P) doping, the magnetic order in BaFe 2(As 1–xP x) 2 compound is first suppressed, then the superconductivity dome emerges to an extended doping region but eventually it disappears at large x. With the help of a minimal two-orbital model for both BaFe 2As 2 and BaFe 2P 2, together with the self-consistent lattice Bogoliubov-de Gennes (BdG) equation, we calculate the phase diagram against the P content x in which the doped isovalent P atoms are treatedmore » as impurities. Furthermore, we show that our numerical results can qualitatively compare with the experimental measurements.« less

Room temperature ferromagnetism with large magnetic moment at low field in rare-earth-doped BiFeO₃ thin films.

PubMed

Kim, Tae-Young; Hong, Nguyen Hoa; Sugawara, T; Raghavender, A T; Kurisu, M

2013-05-22

Thin films of rare earth (RE)-doped BiFeO3 (where RE=Sm, Ho, Pr and Nd) were grown on LaAlO3 substrates by using the pulsed laser deposition technique. All the films show a single phase of rhombohedral structure with space group R3c. The saturated magnetization in the Ho- and Sm-doped films is much larger than the values reported in the literature, and is observed at quite a low field of 0.2 T. For Ho and Sm doping, the magnetization increases as the film becomes thinner, suggesting that the observed magnetism is mostly due to a surface effect. In the case of Nd doping, even though the thin film has a large magnetic moment, the mechanism seems to be different.

Study on photoemission surface of varied doping GaN photocathode

NASA Astrophysics Data System (ADS)

Qiao, Jianliang; Du, Ruijuan; Ding, Huan; Gao, Youtang; Chang, Benkang

2014-09-01

For varied doping GaN photocathode, from bulk to surface the doping concentrations are distributed from high to low. The varied doping GaN photocathode may produce directional inside electric field within the material, so the higher quantum efficiency can be obtained. The photoemission surface of varied doping GaN photocathode is very important to the high quantum efficiency, but the forming process of the surface state after Cs activation or Cs/O activation has been not known completely. Encircling the photoemission mechanism of varied GaN photocathode, considering the experiment phenomena during the activation and the successful activation results, the varied GaN photocathode surface model [GaN(Mg):Cs]:O-Cs after activation with cesium and oxygen was given. According to GaN photocathode activation process and the change of electronic affinity, the comparatively ideal NEA property can be achieved by Cs or Cs/O activation, and higher quantum efficiency can be obtained. The results show: The effective NEA characteristic of GaN can be gotten only by Cs. [GaN(Mg):Cs] dipoles form the first dipole layer, the positive end is toward the vacuum side. In the activation processing with Cs/O, the second dipole layer is formed by O-Cs dipoles, A O-Cs dipole includes one oxygen atom and two Cs atoms, and the positive end is also toward the vacuum side thus the escape of electrons can be promoted.

Korean national athletes' knowledge, practices, and attitudes of doping: a cross-sectional study.

PubMed

Kim, Taegyu; Kim, Young Hoon

2017-02-14

Despite the efforts of the World Anti-Doping Agency and national anti-doping agencies at the international level, a relatively low and steady rate of positive doping tests still persists all over the world. Evidence on adolescents using doping substances exists, and the proportion of adolescents engaging in doping practices is small but significant. In relation to the international research trends on anti-doping, this study aims to evaluate doping knowledge, practices, and attitudes among Korean adult and adolescent elite athletes to provide effective information on anti-doping policies and education programs. This study was a cross-sectional study of 454 Korean elite athletes (249 adults in 23 events and 205 adolescents in 22 events). Data were collected by an interviewer-administered questionnaire containing items regarding doping practices and knowledge, brief definitions of performance-enhancing substances/methods and recreational substances, and the Performance Enhancement Attitude Scale (PEAS). Adolescent (47.3%) and adult (57.0%) athletes received information on banned substances of their respective sports from the Korea Anti-Doping Agency, and 39.0 and 53.4% of adolescents and adults, respectively, had knowledge of banned substances and had permissive attitudes toward doping compared to those who were unaware. Adolescent and adult athletes have inadvertently (1.5 and 3.6%, respectively) or knowingly (1.0 and 2.8%, respectively) taken banned performance-enhancing substances, and 2.4 and 3.2%, respectively, knew someone who had taken banned substances. And the adolescent athletes in motor skill category (PEAS: 40.24 ± 10.91) were more permissive toward doping than those in team category (PEAS: 35.08 ± 10.21). An in-depth anti-doping education for Korean athletes should be more widely implemented, and effective anti-doping policy should meet the athletes' demographic characteristics, personalities, and values.

Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance.

PubMed

Khalil, Hafiz M W; Khan, Muhammad Farooq; Eom, Jonghwa; Noh, Hwayong

2015-10-28

The development of low resistance contacts to 2D transition-metal dichalcogenides (TMDs) is still a big challenge for the future generation field effect transistors (FETs) and optoelectronic devices. Here, we report a chemical doping technique to achieve low contact resistance by keeping the intrinsic properties of few layers WS2. The transfer length method has been used to investigate the effect of chemical doping on contact resistance. After doping, the contact resistance (Rc) of multilayer (ML) WS2 has been reduced to 0.9 kΩ·μm. The significant reduction of the Rc is mainly due to the high electron doping density, thus a reduction in Schottky barrier height, which limits the device performance. The threshold voltage of ML-WS2 FETs confirms a negative shift upon the chemical doping, as further confirmed from the positions of E(1)2g and A1g peaks in Raman spectra. The n-doped samples possess a high drain current of 65 μA/μm, with an on/off ratio of 1.05 × 10(6) and a field effect mobility of 34.7 cm(2)/(V·s) at room temperature. Furthermore, the photoelectric properties of doped WS2 flakes were also measured under deep ultraviolet light. The potential of using LiF doping in contact engineering of TMDs opens new ways to improve the device performance.

Intended or Unintended Doping? A Review of the Presence of Doping Substances in Dietary Supplements Used in Sports

PubMed Central

Mañas Ortiz, Christian; Ortiz-Moncada, Rocio

2017-01-01

Introduction: The use of dietary supplements is increasing among athletes, year after year. Related to the high rates of use, unintentional doping occurs. Unintentional doping refers to positive anti-doping tests due to the use of any supplement containing unlisted substances banned by anti-doping regulations and organizations, such as the World Anti-Doping Agency (WADA). The objective of this review is to summarize the presence of unlabeled doping substances in dietary supplements that are used in sports. Methodology: A review of substances/metabolites/markers banned by WADA in ergonutritional supplements was completed using PubMed. The inclusion criteria were studies published up until September 2017, which analyzed the content of substances, metabolites and markers banned by WADA. Results: 446 studies were identified, 23 of which fulfilled all the inclusion criteria. In most of the studies, the purpose was to identify doping substances in dietary supplements. Discussion: Substances prohibited by WADA were found in most of the supplements analyzed in this review. Some of them were prohormones and/or stimulants. With rates of contamination between 12 and 58%, non-intentional doping is a point to take into account before establishing a supplementation program. Athletes and coaches must be aware of the problems related to the use of any contaminated supplement and should pay special attention before choosing a supplement, informing themselves fully and confirming the guarantees offered by the supplement. PMID:28976928

Electrochemical corrosion behavior, microstructure and magnetic properties of sintered Nd-Fe-B permanent magnet doped by CuZn5 powders

NASA Astrophysics Data System (ADS)

Liu, W. Q.; Wang, Z.; Sun, C.; Yue, M.; Liu, Y. Q.; Zhang, D. T.; Zhang, J. X.

2014-05-01

Nd-Fe-B permanent magnets with a small amount of CuZn5 powders doping were prepared by conventional sintered method. The effects of CuZn5 contents on magnetic properties and microstructure, electrochemical corrosion resistance of sintered Nd-Fe-B magnets were systematically studied. The results show that the magnetic properties of magnets do not have a significant variation by CuZn5 powders doping; the coercivity of magnets rises gradually, while the remanence of the magnets decreases a little with increasing of the CuZn5 amount. The CuZn5 doped magnets have more positive corrosion potential, Ecorr, and much lower corrosion current density, icorr, than the magnets without CuZn5 doping, indicating CuZn5 doping could improve the corrosion resistance. Both Zn and Cu enrich mainly into the Nd-rich phase, fully improve the wettability between the Nd-rich phase and the Nd2Fe14B phase, and repair the defects of the main phase, so the coercivity of magnets doped with CuZn5 powders rises. Such microstructure modification effectively restrains the aggressive inter-granular corrosion. As a result, the CuZn5 doped magnet possesses excellent corrosion resistance in NaCl electrolyte.

Microstructural and electrical characteristics of rare earth oxides doped ZnO varistor films

NASA Astrophysics Data System (ADS)

Jiao, Lei; Mei, Yunzhu; Xu, Dong; Zhong, Sujuan; Ma, Jia; Zhang, Lei; Bao, Li

2018-02-01

ZnO-Bi2O3 varistor films doped with two kinds of rare earth element oxides (Lu2O3 and Yb2O3) were prepared by the sol-gel method. The effects of Lu2O3/Yb2O3 doping on the microstructure and electrical characteristics of ZnO-Bi2O3 varistor films were investigated. All samples show a homogenized morphology and an improved nonlinear relationship between the electric field (E) and current density (I). Both Yb2O3 and Lu2O3 doping can decrease the grain size of ZnO-Bi2O3 varistor films and improve the electrical properties, which have a positive effect on the development of ZnO varistor ceramics. Yb2O3 doping significantly increases the dielectric constant at low frequency. 0.2 mol. % Yb2O3 doped ZnO-Bi2O3 varistor films exhibit the highest nonlinear coefficient (2.5) and the lowest leakage current (328 μA) among Lu2O3/Yb2O3 doped ZnO-Bi2O3 varistor films. Similarly, 0.1 mol. % Lu2O3 doping increases the nonlinear coefficient to 1.9 and decrease the leakage current to 462 μA.

Current anti-doping policy: a critical appraisal

PubMed Central

Kayser, Bengt; Mauron, Alexandre; Miah, Andy

2007-01-01

Background Current anti-doping in competitive sports is advocated for reasons of fair-play and concern for the athlete's health. With the inception of the World Anti Doping Agency (WADA), anti-doping effort has been considerably intensified. Resources invested in anti-doping are rising steeply and increasingly involve public funding. Most of the effort concerns elite athletes with much less impact on amateur sports and the general public. Discussion We review this recent development of increasingly severe anti-doping control measures and find them based on questionable ethical grounds. The ethical foundation of the war on doping consists of largely unsubstantiated assumptions about fairness in sports and the concept of a "level playing field". Moreover, it relies on dubious claims about the protection of an athlete's health and the value of the essentialist view that sports achievements reflect natural capacities. In addition, costly antidoping efforts in elite competitive sports concern only a small fraction of the population. From a public health perspective this is problematic since the high prevalence of uncontrolled, medically unsupervised doping practiced in amateur sports and doping-like behaviour in the general population (substance use for performance enhancement outside sport) exposes greater numbers of people to potential harm. In addition, anti-doping has pushed doping and doping-like behaviour underground, thus fostering dangerous practices such as sharing needles for injection. Finally, we argue that the involvement of the medical profession in doping and anti-doping challenges the principles of non-maleficience and of privacy protection. As such, current anti-doping measures potentially introduce problems of greater impact than are solved, and place physicians working with athletes or in anti-doping settings in an ethically difficult position. In response, we argue on behalf of enhancement practices in sports within a framework of medical supervision. Summary Current anti-doping strategy is aimed at eradication of doping in elite sports by means of all-out repression, buttressed by a war-like ideology similar to the public discourse sustaining international efforts against illicit drugs. Rather than striving for eradication of doping in sports, which appears to be an unattainable goal, a more pragmatic approach aimed at controlled use and harm reduction may be a viable alternative to cope with doping and doping-like behaviour. PMID:17394662

Electron transport through triangular potential barriers with doping-induced disorder

NASA Astrophysics Data System (ADS)

Elpelt, R.; Wolst, O.; Willenberg, H.; Malzer, S.; Döhler, G. H.

2004-05-01

Electron transport through single-, double-, and triple-barrier structures created by the insertion of suitably δ-doped layers in GaAs is investigated. The results are compared with experiments on barriers of similar shape, but obtained by linear grading of the Al fraction x in AlxGa1-xAs structures. In the case of the doping-induced space-charge potential it is found that the effective barrier height for transport is much lower than expected from a simple model, in which uniform distribution of the doping charge within the doped layers is assumed. This reduction is quantitatively explained by taking into account the random distribution of the acceptor atoms within the δp-doped layers, which results in large spatial fluctuations of the barrier potential. The transport turns out to be dominated by small regions around the energetically lowest saddle points of the random space-charge potential. Additionally, independent on the dimensionality of the transport [three-dimensional (3D) to 3D in the single barrier, from 3D through 2D to 3D in the double barrier, and from 3D through 2D through 2D to 3D in the triple-barrier structure], fingerprints of 2D subband resonances are neither experimentally observed nor theoretically expected in the doping-induced structures. This is attributed to the disorder-induced random spatial fluctuations of the subband energies in the n layers which are uncorrelated for neighboring layers. Our interpretations of the temperature-dependent current-voltage characteristics are corroborated by comparison with the experimental and theoretical results obtained from the corresponding fluctuation-free AlxGa1-xAs structures. Quantitative agreement between theory and experiment is observed in both cases.

Observation of non-Fermi liquid behavior in hole-doped Eu2Ir2O7

NASA Astrophysics Data System (ADS)

Banerjee, A.; Sannigrahi, J.; Giri, S.; Majumdar, S.

2017-12-01

The Weyl semimetallic compound Eu2Ir2O7 and its hole-doped derivatives (which are achieved by substituting trivalent Eu by divalent Sr) are investigated through transport, magnetic, and calorimetric studies. The metal-insulator transition (MIT) temperature is found to get substantially reduced with hole doping, and for 10% Sr doping the composition is metallic down to temperature as low as 5 K. These doped compositions are found to violate the Mott-Ioffe-Regel condition for minimum electrical conductivity and show a distinct signature of non-Fermi liquid behavior at low temperature. The MIT in the doped compounds does not correlate with the magnetic transition point, and Anderson-Mott-type disorder-induced localization may be attributed to the ground-state insulating phase. The observed non-Fermi liquid behavior can be understood on the basis of disorder-induced distribution of the spin-orbit-coupling parameter, which is markedly different in the case of Ir4 + and Ir5 + ions.

Knowledge of pharmacy students about doping, and the need for doping education: a questionnaire survey.

PubMed

Shibata, Keita; Ichikawa, Koichi; Kurata, Naomi

2017-08-11

Anti-doping activities are carried out on a global scale. Based on these activities, the specialty of "sports pharmacist," which entails a deeper comprehension of doping, use of supplements, and appropriate drug use for athletes, was established in 2009 in Japan. It is difficult to say whether the education on doping is adequate for pharmacy students who will be eligible to become sports pharmacists. It is also unclear how well these students understand doping. Therefore, the aim of this study was to investigate pharmacy students' current knowledge of appropriate drug use, doping and use of supplements, and to explore the need for further education on these topics. A questionnaire survey was conducted from July 3rd to August 2nd in 2014 at Showa University in Japan. A total of 406 respondents (2nd- to 6th-year students) were assessed as eligible. Group comparison was used to compare those who had attended a lecture about doping and those who had not. Most of the students only knew the word doping and had not attended a lecture on the subject, but 72% of them expressed a desire to attend one. Over half did not know that the most common doping violation in Japan is unintentional doping, and were unfamiliar with certain past cases of doping. In addition, 41% did not know that over-the-counter medicines and dietary supplements might contain prohibited substances, and 87% were unaware that names of prohibited substances might not appear on the ingredient labels of dietary supplements. In contrast, attending a lecture on doping was effective in facilitating the acquisition of all these types of knowledge. It is important to provide more opportunities for appropriate education of pharmacy students on the topic of doping, given that interest exists and attending a lecture on the topic appears to be useful. More education about doping for pharmacy students would be as effective for anti-doping activities as is education of athletes.

From two-dimension to one-dimension: the curvature effect of silicon-doped graphene and carbon nanotubes for oxygen reduction reaction.

PubMed

Zhang, Peng; Hou, Xiuli; Mi, Jianli; He, Yanqiong; Lin, Lin; Jiang, Qing; Dong, Mingdong

2014-09-07

For the goal of practical industrial development of fuel cells, inexpensive, sustainable, and highly efficient electrocatalysts for oxygen reduction reactions (ORR) are highly desirable alternatives to platinum (Pt) and other rare metals. In this work, based on density functional theory, silicon (Si)-doped carbon nanotubes (CNTs) and graphene as metal-free, low cost, and high-performance electrocatalysts for ORR are studied systematically. It is found that the curvature effect plays an important role in the adsorption and reduction of oxygen. The adsorption of O2 becomes weaker as the curvature varies from positive values (outside CNTs) to negative values (inside CNTs). The free energy change of the rate-determining step of ORR on the concave inner surface of Si-doped CNTs is smaller than that on the counterpart of Si-doped graphene, while that on the convex outer surface of Si-doped CNTs is larger than that on Si-doped graphene. Uncovering this new ORR mechanism on silicon-doped carbon electrodes is significant as the same principle could be applied to the development of various other metal-free efficient ORR catalysts for fuel cell applications.

Tuning near-gap electronic structure, interface charge transfer and visible light response of hybrid doped graphene and Ag3PO4 composite: Dopant effects

PubMed Central

He, Chao-Ni; Huang, Wei-Qing; Xu, Liang; Yang, Yin-Cai; Zhou, Bing-Xin; Huang, Gui-Fang; Peng, P.; Liu, Wu-Ming

2016-01-01

The enhanced photocatalytic performance of doped graphene (GR)/semiconductor nanocomposites have recently been widely observed, but an understanding of the underlying mechanisms behind it is still out of reach. As a model system to study the dopant effects, we investigate the electronic structures and optical properties of doped GR/Ag3PO4 nanocomposites using the first-principles calculations, demonstrating that the band gap, near-gap electronic structure and interface charge transfer of the doped GR/Ag3PO4(100) composite can be tuned by the dopants. Interestingly, the doping atom and C atoms bonded to dopant become active sites for photocatalysis because they are positively or negatively charged due to the charge redistribution caused by interaction. The dopants can enhance the visible light absorption and photoinduced electron transfer. We propose that the N atom may be one of the most appropriate dopants for the GR/Ag3PO4 photocatalyst. This work can rationalize the available experimental results about N-doped GR-semiconductor composites, and enriches our understanding on the dopant effects in the doped GR-based composites for developing high-performance photocatalysts. PMID:26923338

Photoluminescence of phosphorus atomic layer doped Ge grown on Si

NASA Astrophysics Data System (ADS)

Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

2017-10-01

Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

Vibration responses of h-BN sheet to charge doping and external strain

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Wei; Yang, Yu; Zheng, Fawei

2013-12-07

Based on density functional theory and density functional perturbation theory calculations, we systematically investigate the vibration responses of h-BN sheet to charge doping and external strains. It is found that under hole doping, the phonon frequencies of the ZO and TO branches at different wave vector q shift linearly with different slopes. Under electron doping, although the phonon frequencies shift irregularly, the shifting values are different at different phonon wave vectors. Interestingly, we find that external strain can restrain the irregular vibration responses of h-BN sheet to electron doping. The critical factor is revealed to be the relative position ofmore » the nearly free electron and boron p{sub z} states of h-BN sheet. Under external strains, the vibration responses of h-BN sheet are also found to be highly dependent on the phonon branches. Different vibration modes at different q points are revealed to be responsible for the vibration responses of h-BN sheet to charge doping and external strain. Our results point out a new way to detect the doping or strain status of h-BN sheet by measuring the vibration frequencies at different wave vector.« less

Positive Ion Induced Solidification of He4

NASA Astrophysics Data System (ADS)

Moroshkin, P.; Lebedev, V.; Weis, A.

2009-03-01

We have observed bulk solidification of He4 induced by nucleation on positive alkali ions in pressurized superfluid helium. The ions are extracted into the liquid from alkali-doped solid He by a static electric field. The experiments prove the existence of charged particles in a solid structure composed of doped He that was recently shown to coexist with superfluid helium below the He solidification pressure. This supports our earlier suggestion that the Coulomb interaction of positive ions surrounded by a solid He shell (snowballs) and electrons trapped in spherical cavities (electron bubbles), together with surface tension, is responsible for the stability of that structure against melting. We have determined the density of charges in the sample by two independent methods.

Electrical characterization of Bi1.50-xYxZn0.92Nb1.5O6.92 varactors

NASA Astrophysics Data System (ADS)

Qasrawi, A. F.; Muis, Khalil O. Abu; Rob, Osama H. Abu Al; Mergen, A.

2014-05-01

The electrical properties of yttrium doped bismuth zinc niobium oxide (BZN) pyrochlore ceramics are explored by means of temperature dependent electrical conductivity dielectric constant and capacitance spectra in the frequency range of 0-3 GHz. It is observed that the doped BZN exhibit a conductivity type conversion from intrinsic to extrinsic as the doping content increased from 0.04 to 0.06. The thermal energy bandgap of the intrinsic type is 3.45 eV. The pyrochlore is observed to exhibit a dielectric breakdown at 395 K. In addition, a negative capacitance (NC) spectrum with main resonance peak position of 23.2 MHz is detected. The NC effect is ascribed to the increased polarization and the availability of more free carriers in the device. When the NC signal amplitude is attenuated in the range of 0-20 dBm at 50 MHz and 150 MHz, wide tunability is monitored. Such characteristics of the Y-doped BZN are attractive for using them to cancel the positive parasitic capacitance of electronic circuits. The canceling of parasitic capacitance improves the high frequency performance of filter inductors and reduces the common mode noise of the resonance signal.

Effect of absorption recovery in bismuth-doped silica glass at 1450 nm on soliton grouping in fiber laser

PubMed Central

Gumenyuk, R.; Melkumov, M. A.; Khopin, V. F.; Dianov, E. M.; Okhotnikov, O. G.

2014-01-01

Saturable absorption in bismuth-doped glasses was found to have a noticeable influence on soliton interaction and group formation. This phenomenon, observed in 1450 nm mode-locked bismuth-doped fiber laser, shows the distinct feature of the multiple pulse regime, which appears as a stationary pulse group whose length can be spread over the whole cavity length by variation of the pump power and polarization. Pulse positioning within the ensemble depends on the saturation fluence and the relatively fast recovery dynamics of bismuth fiber. PMID:25391808

Doping-dependent correlation effects in (Sr1-xLax) 3Ir2O7

NASA Astrophysics Data System (ADS)

Affeldt, Gregory; Hogan, Tom; Denlinger, Jonathan D.; Vishwanath, Ashvin; Wilson, Stephen D.; Lanzara, Alessandra

2018-03-01

We have measured the signatures of electronic energy scales and their doping evolution in the band structure of (Sr1-xLax) 3Ir2O7 using angle-resolved photoemission spectroscopy. While band splittings and positions corresponding to the bilayer splitting and spin-orbit coupling undergo only small changes, the Mott gap and effective mass of both the lower Hubbard band and conduction band exhibit strong variations with doping. These changes correspond to similar observations in the cuprate superconductors, and are likely connected to the changing effective Coulomb interaction upon addition of itinerant carriers.

Combined optical/MCD/ODMR investigations of photochromism in doubly-doped Bi12GeO20

NASA Astrophysics Data System (ADS)

Briat, B.; Borowiec, M. T.; Rjeily, H. B.; Ramaz, F.; Hamri, A.; Szymczak, H.

Electron paramagnetic resonance is detected optically via the change of magnetic circular dichroism under microwaves at 35 GHz. The technique is applied to Bi12GeO20 samples co-doped with vanadium and a second transition metal (Cr, Mn, Co, Cu). The optical and magnetic properties of several paramagnetic defects (V-Ge(4+) and Cr-Ge(4+)) are directly correlated. The basic photochromic processes occuring in samples doped with V, Mn, and Mn+V are explained. The V-Ge(4+/5+) level is positioned roughly 2.2 eV above the valence band.

Determination of gap solution and critical temperature in doped graphene superconductivity

NASA Astrophysics Data System (ADS)

Xu, Chenmei; Yang, Yisong

2017-04-01

It is shown that the gap solution and critical transition temperature are significantly enhanced by doping in a recently developed BCS formalism for graphene superconductivity in such a way that positive gap and transition temperature both occur in arbitrary pairing coupling as far as doping is present. The analytic construction of the BCS gap and transition temperature offers highly effective globally convergent iterative methods for the computation of these quantities. A series of numerical examples are presented as illustrations which are in agreement with the theoretical and experimental results obtained in the physics literature and consolidate the analytic understanding achieved.

Cosmetic doping--when anabolic-androgenic steroids are not enough.

PubMed

Figueiredo, Vandré Casagrande; Silva, Paulo Rodrigo Pedroso da

2014-07-01

Doping is considered to be a major sports problem. This article describes a new threat and challenge to the sport of bodybuilding; the nonmedical use of a chemical in order to mimic muscle hypertrophy. Although muscle fillers are not new, being used for cosmetic purposes in medicine for a long time, the illegal use of muscle fillers has been increasing during the last few years and decades. The history of cosmetic doping, with particular attention to the Brazilian case, is discussed. Limitations are noted and future needed research is suggested.

Electrolytic photodissociation of chemical compounds by iron oxide electrodes

DOEpatents

Somorjai, Gabor A.; Leygraf, Christofer H.

1984-01-01

Chemical compounds can be dissociated by contacting the same with a p/n type semi-conductor diode having visible light as its sole source of energy. The diode consists of low cost, readily available materials, specifically polycrystalline iron oxide doped with silicon in the case of the n-type semi-conductor electrode, and polycrystalline iron oxide doped with magnesium in the case of the p-type electrode. So long as the light source has an energy greater than 2.2 electron volts, no added energy source is needed to achieve dissociation.

Electrolytic photodissociation of chemical compounds by iron oxide photochemical diodes

DOEpatents

Somorjai, Gabor A.; Leygraf, Christofer H.

1985-01-01

Chemical compounds can be dissociated by contacting the same with a p/n type semi-conductor photochemical diode having visible light as its sole source of energy. The photochemical diode consists of low cost, readily available materials, specifically polycrystalline iron oxide doped with silicon in the case of the n-type semi-conductor electrode, and polycrystalline iron oxide doped with magnesium in the case of the p-type electrode. So long as the light source has an energy greater than 2.2 electron volts, no added energy source is needed to achieve dissociation.

Virtue or Pretense? Looking behind Self-Declared Innocence in Doping

PubMed Central

Petróczi, Andrea; Aidman, Eugene V.; Hussain, Iltaf; Deshmukh, Nawed; Nepusz, Tamás; Uvacsek, Martina; Tóth, Miklós; Barker, James; Naughton, Declan P.

2010-01-01

Background Social science studies of doping practices in sport rely predominantly on self-reports. Studies of psychoactive drug use indicate that self-reporting is characterised by under-reporting. Likewise doping practice is likely to be equally under-reported, if not more so. This calls for more sophisticated methods for such reporting and for independent, objective validation of its results. The aims of this study were: i) to contrast self-reported doping use with objective results from chemical hair analysis and ii) to investigate the influence of the discrepancy on doping attitudes, social projection, descriptive norms and perceived pressure to use doping. Methodology/Principal Findings A doping attitudes questionnaire was developed and combined with a response latency-based implicit association test and hair sample analysis for key doping substances in 14 athletes selected from a larger sample (N = 82) to form contrast comparison groups. Results indicate that patterns of group differences in social projection, explicit attitude about and perceived pressure to use doping, vary depending on whether the user and non-user groups are defined by self-report or objectively verified through hair analysis. Thus, self-confessed users scored higher on social projection, explicit attitude to doping and perceived pressure. However, when a doping substance was detected in the hair of an athlete who denied doping use, their self-report evidenced extreme social desirability (negative attitude, low projection and low perceived pressure) and contrasted sharply with a more positive estimate of their implicit doping attitude. Conclusions/Significance Hair analysis for performance enhancing substances has shown considerable potential in validating athletes' doping attitude estimations and admissions of use. Results not only confirm the need for improved self-report methodology for future research in socially-sensitive domains but also indicate where the improvements are likely to come from: as chemical validation remains expensive, a more realistic promise for large scale studies and online data collection efforts is held by measures of implicit social cognition. PMID:20463978

Top-gate organic depletion and inversion transistors with doped channel and injection contact

NASA Astrophysics Data System (ADS)

Liu, Xuhai; Kasemann, Daniel; Leo, Karl

2015-03-01

Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

Doping of vanadium to nanocrystalline diamond films by hot filament chemical vapor deposition

PubMed Central

2012-01-01

Doping an impure element with a larger atomic volume into crystalline structure of buck crystals is normally blocked because the rigid crystalline structure could not tolerate a larger distortion. However, this difficulty may be weakened for nanocrystalline structures. Diamonds, as well as many semiconductors, have a difficulty in effective doping. Theoretical calculations carried out by DFT indicate that vanadium (V) is a dopant element for the n-type diamond semiconductor, and their several donor state levels are distributed between the conduction band and middle bandgap position in the V-doped band structure of diamond. Experimental investigation of doping vanadium into nanocrystalline diamond films (NDFs) was first attempted by hot filament chemical vapor deposition technique. Acetone/H2 gas mixtures and vanadium oxytripropoxide (VO(OCH2CH2CH3)3) solutions of acetone with V and C elemental ratios of 1:5,000, 1:2,000, and 1:1,000 were used as carbon and vanadium sources, respectively. The resistivity of the V-doped NDFs decreased two orders with the increasing V/C ratios. PMID:22873631

Fabrication of a nanometer thick nitrogen delta doped layer at the sub-surface region of (100) diamond

NASA Astrophysics Data System (ADS)

Chandran, Maneesh; Michaelson, Shaul; Saguy, Cecile; Hoffman, Alon

2016-11-01

In this letter, we report on the proof of a concept of an innovative delta doping technique to fabricate an ensemble of nitrogen vacancy centers at shallow depths in (100) diamond. A nitrogen delta doped layer with a concentration of ˜1.8 × 1020 cm-3 and a thickness of a few nanometers was produced using this method. Nitrogen delta doping was realized by producing a stable nitrogen terminated (N-terminated) diamond surface using the RF nitridation process and subsequently depositing a thin layer of diamond on the N-terminated diamond surface. The concentration of nitrogen on the N-terminated diamond surface and its stability upon exposure to chemical vapor deposition conditions are determined by x-ray photoelectron spectroscopy analysis. The SIMS profile exhibits a positive concentration gradient of 1.9 nm/decade and a negative gradient of 4.2 nm/decade. The proposed method offers a finer control on the thickness of the delta doped layer than the currently used ion implantation and delta doping techniques.

Substance use and misuse among professional ballet dancers.

PubMed

Sekulic, Damir; Peric, Mia; Rodek, Jelena

2010-07-01

This study investigated substance use and misuse among 16 female and 9 male Croatian ballet professionals in 2008 using an original questionnaire. We analyzed social, personal, activity- and training-related, and educational factors, and criteria such as: binge alcohol drinking, cigarette smoking, appetite suppressant consumption, analgesic use, and actual and potential "doping" habits. Frequency tables and rank-order correlation were calculated. More than one third of the male dancers reported binge drinking, while 20% of the females smoked more than a box of cigarettes per day. Almost 25% of these dancers will use "doping" if it will ensure successful ballet performance, regardless of negative health consequences. In males, the risk of potential "doping" behavior increased with age. In females, education level was negatively related to cigarette smoking, but positively correlated to potential "doping" habits and behavior. In both genders, religiousness was the factor negatively related to the following: (1) potential "doping" behavior and (2) belief that "doping" exists in professional ballet. Results suggest that there is evident need for more specific medical and/or psychological services in professional ballet. The study's limitations are noted.

Doping He droplets by laser ablation with a pulsed supersonic jet source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katzy, R.; Singer, M.; Izadnia, S.

Laser ablation offers the possibility to study a rich number of atoms, molecules, and clusters in the gas phase. By attaching laser ablated materials to helium nanodroplets, one can gain highly resolved spectra of isolated species in a cold, weakly perturbed system. Here, we present a new setup for doping pulsed helium nanodroplet beams by means of laser ablation. In comparison to more well-established techniques using a continuous nozzle, pulsed nozzles show significant differences in the doping efficiency depending on certain experimental parameters (e.g., position of the ablation plume with respect to the droplet formation, nozzle design, and expansion conditions).more » In particular, we demonstrate that when the ablation region overlaps with the droplet formation region, one also creates a supersonic beam of helium atoms seeded with the sample material. The processes are characterized using a surface ionization detector. The overall doping signal is compared to that of conventional oven cell doping showing very similar dependence on helium stagnation conditions, indicating a comparable doping process. Finally, the ablated material was spectroscopically studied via laser induced fluorescence.« less

Accurate X-ray diffraction studies of KTiOPO{sub 4} single crystals doped with niobium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novikova, N. E., E-mail: natnov@ns.crys.ras.ru; Sorokina, N. I.; Alekseeva, O. A.

2017-01-15

Single crystals of potassium titanyl phosphate doped with 4% of niobium (КТР:4%Nb) and 6% of niobium (KTP:6%Nb) are studied by accurate X-ray diffraction at room temperature. The niobium atoms are localized near the Ti1 and Ti2 atomic positions, and their positions are for the first time refined independent of the titanium atomic positions. Maps of difference electron density in the vicinity of K1 and K2 atomic positions are analyzed. It is found that in the structure of crystal КТР:4%Nb, additional positions of K atoms are located farther from the main positions and from each other than in КТР and KTP:6%Nbmore » crystals. The nonuniform distribution of electron density found in the channels of the КТР:4%Nb structure is responsible for ~20% increase in the signal of second harmonic generation.« less

Isolated molecular dopants in pentacene observed by scanning tunneling microscopy

NASA Astrophysics Data System (ADS)

Ha, Sieu D.; Kahn, Antoine

2009-11-01

Doping is essential to the control of electronic structure and conductivity of semiconductor materials. Whereas doping of inorganic semiconductors is well established, doping of organic molecular semiconductors is still relatively poorly understood. Using scanning tunneling microscopy, we investigate, at the molecular scale, surface and subsurface tetrafluoro-tetracyanoquinodimethane p -dopants in the prototypical molecular semiconductor pentacene. Surface dopants diffuse to pentacene vacancies and appear as negatively charged centers, consistent with the standard picture of an ionized acceptor. Subsurface dopants, however, have the effect of a positive charge, evidence that the donated hole is localized by the parent acceptor counterion, in contrast to the model of doping in inorganic semiconductors. Scanning tunneling spectroscopy shows that the electron potential energy is locally lowered near a subsurface dopant feature, in agreement with the localized hole model.

Magnetic properties and magnetocaloric effect in Pt doped Ni-Mn-Ga

NASA Astrophysics Data System (ADS)

Singh, Sanjay; D'Souza, S. W.; Mukherjee, K.; Kushwaha, P.; Barman, S. R.; Agarwal, Sandeep; Mukhopadhyay, P. K.; Chakrabarti, Aparna; Sampathkumaran, E. V.

2014-06-01

Large magnetocaloric effect is observed in Ni1.8Pt0.2MnGa close to room temperature. The entropy change shows a crossover from positive to negative sign at the martensite transition. It is negative above 1.6 T and its magnitude increases linearly with magnetic field. An increase in the saturation magnetic moment is observed with Pt doping in Ni2MnGa. Ab initio theoretical calculations show that the increase in magnetic moment with Pt doping in Ni2MnGa is associated with increase in the Mn and Pt local moments in the ferromagnetic ground state. The Curie temperature calculated from the exchange interaction parameters is in good agreement with experiment, showing the absence of any antiferromagnetic correlation due to Pt doping.

Metal-Doped Silver Oxide Films as a Mask Layer for the Super-RENS Disk

NASA Astrophysics Data System (ADS)

Shima, Takayuki; Buechel, Dorothea; Mihalcea, Christophe; Kim, Jooho; Atoda, Nobufumi; Tominaga, Junji

Various kinds of metal (Co, Pd, Pt and Au) were doped into Ag2O and AgO sputtered films to study its effect on the thermal decomposition process. The oxygen composition ratio was evaluated by the X-ray fluorescence spectroscopy method after annealing up to 260,oC. The optical transmittance change was measured during heating of the film to 600,oC. Noble metal doping was found to modify the AgO decomposition process, and the oxygen content decreased gradually compared to the undoped case. Super-RENS disks with a metal-doped AgO mask were prepared, and the laser power necessary for super-resolutional readout was evaluated. It slightly shifted to the higher-power side when the noble metal was doped, and this agrees with the modification of the decomposition process.Japan Science and Technology Corporation, Domestic Research Fellow

Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals.

PubMed

Buckeridge, J; Catlow, C R A; Scanlon, D O; Keal, T W; Sherwood, P; Miskufova, M; Walsh, A; Woodley, S M; Sokol, A A

2015-01-09

We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing on the technologically important case of Mg doping, using a model that takes into consideration both the effect of hole localization and dipolar polarization of the host material, and includes a well-defined reference level. Defect formation and ionization energies show that divalent dopants are counterbalanced in GaN by nitrogen vacancies and not by holes, which explains both the difficulty in achieving p-type conductivity in GaN and the associated major spectroscopic features, including the ubiquitous 3.46 eV photoluminescence line, a characteristic of all lightly divalent-metal-doped GaN materials that has also been shown to occur in pure GaN samples. Our results give a comprehensive explanation for the observed behavior of GaN doped with low concentrations of divalent metals in good agreement with relevant experiment.

Challenges to promoting health for amateur athletes through anti-doping policy.

PubMed

Henning, April

2017-01-01

Anti-doping regulations are intended, at least in part, to promote the health of athletes. While most anti-doping efforts target elite and professional competitors, there have been recent moves by sport governing bodies to expand anti-doping testing to include amateur athletes. Drawing on previous critiques of anti-doping policies and illustrating cases, this article outlines five of the challenges to health promotion of applying the current detect and ban model to the amateur level of sport. I argue that the current approach is not effective and, in some ways, may undermine the goal of health promotion at the amateur level. In order to address these challenges, I propose alternative, health-centred strategies that focus on athlete empowerment and choice through critical awareness of a variety of substances, associated risks and rewards, and the role of expertise in decision-making.

Challenges to promoting health for amateur athletes through anti-doping policy

PubMed Central

Henning, April

2017-01-01

Anti-doping regulations are intended, at least in part, to promote the health of athletes. While most anti-doping efforts target elite and professional competitors, there have been recent moves by sport governing bodies to expand anti-doping testing to include amateur athletes. Drawing on previous critiques of anti-doping policies and illustrating cases, this article outlines five of the challenges to health promotion of applying the current detect and ban model to the amateur level of sport. I argue that the current approach is not effective and, in some ways, may undermine the goal of health promotion at the amateur level. In order to address these challenges, I propose alternative, health-centred strategies that focus on athlete empowerment and choice through critical awareness of a variety of substances, associated risks and rewards, and the role of expertise in decision-making. PMID:28736489

Doping in sports and its spread to at-risk populations: an international review

PubMed Central

BARON, DAVID A; MARTIN, DAVID M; ABOL MAGD, SAMIR

2007-01-01

Doping is now a global problem that follows international sporting events worldwide. International sports federations, led by the International Olympic Committee, have for the past half century attempted to stop the spread of this problem, with little effect. It was expected that, with educational programs, testing, and supportive medical treatment, this substance-abusing behavior would decrease. Unfortunately, this has not been the case. In fact, new, more powerful and undetectable doping techniques and substances are now abused by professional athletes, while sophisticated networks of distribution have developed. Professional athletes are often the role models of adolescent and young adult populations, who often mimic their behaviors, including the abuse of drugs. This review of doping within international sports is to inform the international psychiatric community and addiction treatment professionals of the historical basis of doping in sport and its spread to vulnerable athletic and non-athletic populations. PMID:18235871

Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals

NASA Astrophysics Data System (ADS)

Buckeridge, J.; Catlow, C. R. A.; Scanlon, D. O.; Keal, T. W.; Sherwood, P.; Miskufova, M.; Walsh, A.; Woodley, S. M.; Sokol, A. A.

2015-01-01

We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing on the technologically important case of Mg doping, using a model that takes into consideration both the effect of hole localization and dipolar polarization of the host material, and includes a well-defined reference level. Defect formation and ionization energies show that divalent dopants are counterbalanced in GaN by nitrogen vacancies and not by holes, which explains both the difficulty in achieving p -type conductivity in GaN and the associated major spectroscopic features, including the ubiquitous 3.46 eV photoluminescence line, a characteristic of all lightly divalent-metal-doped GaN materials that has also been shown to occur in pure GaN samples. Our results give a comprehensive explanation for the observed behavior of GaN doped with low concentrations of divalent metals in good agreement with relevant experiment.

Magneto-Resistance in thin film boron carbides

NASA Astrophysics Data System (ADS)

Echeverria, Elena; Luo, Guangfu; Liu, J.; Mei, Wai-Ning; Pasquale, F. L.; Colon Santanta, J.; Dowben, P. A.; Zhang, Le; Kelber, J. A.

2013-03-01

Chromium doped semiconducting boron carbide devices were fabricated based on a carborane icosahedra (B10C2H12) precursor via plasma enhanced chemical vapor deposition, and the transition metal atoms found to dope pairwise on adjacent icosahedra site locations. Models spin-polarized electronic structure calculations of the doped semiconducting boron carbides indicate that some transition metal (such as Cr) doped semiconducting boron carbides may act as excellent spin filters when used as the dielectric barrier in a magnetic tunnel junction structure. In the case of chromium doping, there may be considerable enhancements in the magneto-resistance of the heterostructure. To this end, current to voltage curves and magneto-transport measurements were performed in various semiconducting boron carbide both in and out plane. The I-V curves as a function of external magnetic field exhibit strong magnetoresistive effects which are enhanced at liquid Nitrogen temperatures. The mechanism for these effects will be discussed in the context of theoretical calculations.

Directed Atom-by-Atom Assembly of Dopants in Silicon.

PubMed

Hudak, Bethany M; Song, Jiaming; Sims, Hunter; Troparevsky, M Claudia; Humble, Travis S; Pantelides, Sokrates T; Snijders, Paul C; Lupini, Andrew R

2018-05-17

The ability to controllably position single atoms inside materials is key for the ultimate fabrication of devices with functionalities governed by atomic-scale properties. Single bismuth dopant atoms in silicon provide an ideal case study in view of proposals for single-dopant quantum bits. However, bismuth is the least soluble pnictogen in silicon, meaning that the dopant atoms tend to migrate out of position during sample growth. Here, we demonstrate epitaxial growth of thin silicon films doped with bismuth. We use atomic-resolution aberration-corrected imaging to view the as-grown dopant distribution and then to controllably position single dopants inside the film. Atomic-scale quantum-mechanical calculations corroborate the experimental findings. These results indicate that the scanning transmission electron microscope is of particular interest for assembling functional materials atom-by-atom because it offers both real-time monitoring and atom manipulation. We envision electron-beam manipulation of atoms inside materials as an achievable route to controllable assembly of structures of individual dopants.

Charge trapping and current-conduction mechanisms of metal-oxide-semiconductor capacitors with La xTa y dual-doped HfON dielectrics

NASA Astrophysics Data System (ADS)

Cheng, Chin-Lung; Horng, Jeng-Haur; Chang-Liao, Kuei-Shu; Jeng, Jin-Tsong; Tsai, Hung-Yang

2010-10-01

Charge trapping and related current-conduction mechanisms in metal-oxide-semiconductor (MOS) capacitors with La xTa y dual-doped HfON dielectrics have been investigated under various post-deposition annealing (PDA). The results indicate that by La xTa y incorporation into HfON dielectric enhances electrical and reliability characteristics, including equivalent-oxide-thickness (EOT), stress-induced leakage current (SILC), and trap energy level. The mechanisms related to larger positive charge generation in the gate dielectric bulk can be attributed to La xTa y dual-doped HfON dielectric. The results of C- V measurement indicate that more negative charges are induced with increasing PDA temperature for the La xTa y dual-doped HfON dielectric. The charge current transport mechanisms through various dielectrics have been analyzed with current-voltage ( I- V) measurements under various temperatures. The current-conduction mechanisms of HfLaTaON dielectric at the low-, medium-, and high-electrical fields were dominated by Schottky emission (SE), Frenkel-Poole emission (F-P), and Fowler-Nordheim (F-N), respectively. A low trap energy level ( Φ trap) involved in Frenkel-Pool conduction in an HfLaTaON dielectric was estimated to be around 0.142 eV. Although a larger amount of positive charges generated in the HfLaTaON dielectric was obtained, the Φ trap of these positive charges in the HfLaTaON dielectric are shallow compared with HfON dielectric.

Electronic transport properties of graphene doped by gallium.

PubMed

Mach, J; Procházka, P; Bartošík, M; Nezval, D; Piastek, J; Hulva, J; Švarc, V; Konečný, M; Kormoš, L; Šikola, T

2017-10-13

In this work we present the effect of low dose gallium (Ga) deposition (<4 ML) performed in UHV (10 -7 Pa) on the electronic doping and charge carrier scattering in graphene grown by chemical vapor deposition. In situ graphene transport measurements performed with a graphene field-effect transistor structure show that at low Ga coverages a graphene layer tends to be strongly n-doped with an efficiency of 0.64 electrons per one Ga atom, while the further deposition and Ga cluster formation results in removing electrons from graphene (less n-doping). The experimental results are supported by the density functional theory calculations and explained as a consequence of distinct interaction between graphene and Ga atoms in case of individual atoms, layers, or clusters.

Electronic transport properties of graphene doped by gallium

NASA Astrophysics Data System (ADS)

Mach, J.; Procházka, P.; Bartošík, M.; Nezval, D.; Piastek, J.; Hulva, J.; Švarc, V.; Konečný, M.; Kormoš, L.; Šikola, T.

2017-10-01

In this work we present the effect of low dose gallium (Ga) deposition (<4 ML) performed in UHV (10-7 Pa) on the electronic doping and charge carrier scattering in graphene grown by chemical vapor deposition. In situ graphene transport measurements performed with a graphene field-effect transistor structure show that at low Ga coverages a graphene layer tends to be strongly n-doped with an efficiency of 0.64 electrons per one Ga atom, while the further deposition and Ga cluster formation results in removing electrons from graphene (less n-doping). The experimental results are supported by the density functional theory calculations and explained as a consequence of distinct interaction between graphene and Ga atoms in case of individual atoms, layers, or clusters.

Itinerant magnetism in doped semiconducting β-FeSi2 and CrSi2

PubMed Central

Singh, David J.; Parker, David

2013-01-01

Novel or unusual magnetism is a subject of considerable interest, particularly in metals and degenerate semiconductors. In such materials the interplay of magnetism, transport and other Fermi liquid properties can lead to fascinating physical behavior. One example is in magnetic semiconductors, where spin polarized currents may be controlled and used. We report density functional calculations predicting magnetism in doped semiconducting β-FeSi2 and CrSi2 at relatively low doping levels particularly for n-type. In this case, there is a rapid cross-over to a half-metallic state as a function of doping level. The results are discussed in relation to the electronic structure and other properties of these compounds. PMID:24343332

Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chavanapranee, Tosaporn; Horikoshi, Yoshiji

The characteristics of heavily Sn-doped GaAs samples grown at 300 deg. C by a migration-enhanced epitaxy (MEE) technique are investigated in comparison with those of the samples grown by a conventional molecular-beam epitaxy (MBE) at 580 deg. C. While no discernible difference is observed in the low doping regime, the difference in doping characteristics between the MBE- and MEE-grown samples becomes apparent when the doping concentration exceeds 1x10{sup 19} cm{sup -3}. Sn atoms as high as 4x10{sup 21} cm{sup -3} can be incorporated into MEE-grown GaAs films, unlike the MBE-grown samples that have a maximum doping level limited around 1x10{supmore » 19} cm{sup -3}. Due to an effective suppression of Sn segregation in the MEE growth case, high quality GaAs films with abrupt high-concentration Sn-doping profiles are achieved with the doping concentrations of up to 2x10{sup 21} cm{sup -3}. It has been shown that even though a high concentration of Sn atoms is incorporated into the GaAs film, the electron concentration saturates at 6x10{sup 19} cm{sup -3} and then gradually decreases with Sn concentration. The uniform doping limitation, as well as the electron concentration saturation, is discussed by means of Hall-effect measurement, x-ray diffraction, and Raman scattering spectroscopy.« less

Enhanced Stability of PtRu Supported on N-Doped Carbon for the Anode of a DMFC

DTIC Science & Technology

2012-09-18

nitrogen functionalities are most likely limited to pyrrolic , N-C=O and amine groups. In the case of PtRu/C (N- doped), the ion implantation introduces...suggesting the presence of graphitic, quaternary, pyridinic, C-N=O, pyrrolic , amine and nitrile groups.32,46 Initial DMFC performance and electrochemical

Simulation based comparative analysis of photoresponse in front- and back-illuminated GaN P-I-N ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Wang, Jun; Guo, Jin; Xie, Feng; Wang, Guosheng; Wu, Haoran; Song, Man; Yi, Yuanyuan

2016-10-01

This paper presents the comparative analysis of influence of doping level and doping profile of the active region on zero bias photoresponse characteristics of GaN-based p-i-n ultraviolet (UV) photodetectors operating at front- and back-illuminated. A two dimensional physically-based computer simulation of GaN-based p-i-n UV photodetectors is presented. We implemented GaN material properties and physical models taken from the literature. It is shown that absorption layer doping profile has notable impacts on the photoresponse of the device. Especially, the effect of doping concentration and distribution of the absorption layer on photoresponse is discussed in detail. In the case of front illumination, comparative to uniform n-type doping, the device with n-type Gaussian doping profiles at absorption layer has higher responsivity. Comparative to front illumination, back illuminated detector with p-type doping profiles at absorption layer has higher maximum photoresponse, while the Gaussian doping profiles have a weaker ability to enhance the device responsivity. It is demonstrated that electric field distribution, mobility degradation, and recombinations are jointly responsible for the variance of photoresponse. Our work enriches the understanding and utilization of GaN based p-i-n UV photodetectors.

Children's First Experience of Taking Anabolic-Androgenic Steroids can Occur before Their 10th Birthday: A Systematic Review Identifying 9 Factors That Predicted Doping among Young People

PubMed Central

Nicholls, Adam R.; Cope, Ed; Bailey, Richard; Koenen, Katrin; Dumon, Detlef; Theodorou, Nikolaos C.; Chanal, Benoit; Saint Laurent, Delphine; Müller, David; Andrés, Mar P.; Kristensen, Annemarie H.; Thompson, Mark A.; Baumann, Wolfgang; Laurent, Jean-Francois

2017-01-01

Taking performance-enhancing drugs (PEDs) can cause serious and irreversible health consequences, which can ultimately lead to premature death. Some young people may take PEDs without fully understanding the ramifications of their actions or based on the advice from others. The purpose of this systematic review was to identify the main factors that predicted doping among young people. The literature was systematically reviewed using search engines, manually searching specialist journals, and pearl growing. Fifty-two studies, which included 187,288 young people aged between 10 and 21 years of age, 883 parents of adolescent athletes, and 11 adult coaches, who were interviewed regarding young athletes, were included in this review. Nine factors predicted doping among young people: gender; age; sports participation; sport type; psychological variables; entourage; ethnicity; nutritional supplements; and health harming behaviors. In regards to psychological variables, 22 different constructs were associated with doping among young people. Some psychological constructs were negatively associated with doping (e.g., self-esteem, resisting social pressure, and perfectionist strivings), whereas other were positively associated with doping (e.g., suicide risk, anticipated regret, and aggression). Policy makers and National Anti-Doping Organizations could use these findings to help identify athletes who are more at risk of doping and then expose these individuals to anti-doping education. Based on the current findings, it also appears that education programs should commence at the onset of adolescence or even late childhood, due to the young age in which some individuals start doping. PMID:28676778

Children's First Experience of Taking Anabolic-Androgenic Steroids can Occur before Their 10th Birthday: A Systematic Review Identifying 9 Factors That Predicted Doping among Young People.

PubMed

Nicholls, Adam R; Cope, Ed; Bailey, Richard; Koenen, Katrin; Dumon, Detlef; Theodorou, Nikolaos C; Chanal, Benoit; Saint Laurent, Delphine; Müller, David; Andrés, Mar P; Kristensen, Annemarie H; Thompson, Mark A; Baumann, Wolfgang; Laurent, Jean-Francois

2017-01-01

Taking performance-enhancing drugs (PEDs) can cause serious and irreversible health consequences, which can ultimately lead to premature death. Some young people may take PEDs without fully understanding the ramifications of their actions or based on the advice from others. The purpose of this systematic review was to identify the main factors that predicted doping among young people. The literature was systematically reviewed using search engines, manually searching specialist journals, and pearl growing. Fifty-two studies, which included 187,288 young people aged between 10 and 21 years of age, 883 parents of adolescent athletes, and 11 adult coaches, who were interviewed regarding young athletes, were included in this review. Nine factors predicted doping among young people: gender; age; sports participation; sport type; psychological variables; entourage; ethnicity; nutritional supplements; and health harming behaviors. In regards to psychological variables, 22 different constructs were associated with doping among young people. Some psychological constructs were negatively associated with doping (e.g., self-esteem, resisting social pressure, and perfectionist strivings), whereas other were positively associated with doping (e.g., suicide risk, anticipated regret, and aggression). Policy makers and National Anti-Doping Organizations could use these findings to help identify athletes who are more at risk of doping and then expose these individuals to anti-doping education. Based on the current findings, it also appears that education programs should commence at the onset of adolescence or even late childhood, due to the young age in which some individuals start doping.

Influence of Co doping on combined photocatalytic and antibacterial activity of ZnO nanoparticles

NASA Astrophysics Data System (ADS)

Anandan, M.; Dinesh, S.; Krishnakumar, N.; Balamurugan, K.

2016-11-01

The present work aims to investigate the structural, optical, photocatalyst and antibacterial properties of bare and cobalt doped ZnO nanoparticles (NPs) with different concentrations Zn1-x Co x O (x = 0, 0.03, 0.06 and 0.09) synthesized by co-precipitation method. The XRD patterns confirmed that all samples of cobalt doped ZnO nanostructures revealed the formation of single phase having hexagonal wurtzite structure with crystallite size in the range of 31-41 nm. Further, the decreasing trend in lattice parameters and grain sizes were also seen with increasing doping concentrations which confirms the incorporation of Co ions into the ZnO lattice. This result was further supported by the FT-IR data. HR-TEM images demonstrated the distinct hexagonal like morphology with small agglomeration. The UV-visible absorption spectra exhibits red shift with increase in Co doping concentration in ZnO while corresponding bandgap energy of cobalt doped ZnO NPs decreased with increased Co doping concentration. PL spectra showed a weak UV and visible emission band which may be ascribed to the reduction in oxygen vacancy and defects by cobalt doping. XPS and EDX spectral results confirm the composition and the purity of Co doped ZnO NPs. Furthermore, the Co doped ZnO NPs were found to exhibit lesser photocatalytic activity for the degradation of methyl green dye under UV light illumination in comparison with the bare ZnO NPs. Moreover, anti-bacterial studies reveals that the Co doped ZnO NPs possess more antibacterial effect against gram positive Basillus subtills and gram negative Klebsiella pneumoniae bacterial strains than the bare ZnO NPs.

Hemoglobin mass and biological passport for the detection of autologous blood doping.

PubMed

Pottgiesser, Torben; Echteler, Tobias; Sottas, Pierre-Edouard; Umhau, Markus; Schumacher, Yorck Olaf

2012-05-01

The most promising attempt to reveal otherwise undetectable autologous blood doping is the Athlete Biological Passport enabling a longitudinal monitoring of hematological measures. Recently, the determination of hemoglobin mass (tHb) was suggested to be incorporated in the adaptive model of the Athlete Biological Passport. The purpose therefore was to evaluate the performance of tHb as part of the adaptive model for the detection of autologous blood transfusions in a longitudinal blinded study. Twenty-one subjects were divided into a doped group (n = 11) and a control group (n = 10). During the time course of a simulated cycling season (42 wk) including three major competitions (Classics, Grand Tour, World Championships), multiple autologous transfusions of erythrocyte concentrates were assigned in the doped group. A blinded investigator ordered up to 10 tHb measurements (carbon monoxide rebreathing) per subject, mimicking an intelligent doping testing approach in obtaining hematological data (tHb, OFFmass (novel marker including reticulocytes), and respective sequences) for the adaptive model. The final analysis included 199 of 206 overall tHb measurements. The use of tHb, OFFmass, and their sequences as markers of the adaptive model at the 99% specificity level allowed identification of 10 of 11 doped subjects (91% sensitivity) including one false positive in the control group. At the 99.9% specificity level, 8 of 11 subjects were identified without false positives (73% sensitivity). It seems that the problems of tHb determination by carbon monoxide rebreathing limit the application of this method in antidoping. Because of its potential to detect individual abnormalities associated with autologous blood transfusions shown in this study, a method for tHb determination that is compatible with today's standards of testing should be the focus of future research.

Studying Structural, Optical, Electrical, and Sensing Properties of Nanocrystalline SnO2:Cu Films Prepared by Sol-Gel Method for CO Gas Sensor Application at Low Temperature

NASA Astrophysics Data System (ADS)

Al-Jawad, Selma M. H.; Elttayf, Abdulhussain K.; Saber, Amel S.

Nanocrystalline SnO2 and SnO2:Cu thin films derived from SnCl2ṡ2H2O precursors have been prepared on glass substrates using sol-gel dip-coating technique. The deposited film was 300±20nm thick and the films were annealed in air at 500∘C for 1h. Structural, optical and sensing properties of the films were studied under different preparation conditions, such as Cu-doping concentration of 2%, 4% and 6wt.%. X-ray diffraction studies show the polycrystalline nature with tetragonal rutile structure of SnO2 and Cu:SnO2 thin films. The films have highly preferred orientation along (110). The crystallite size of the prepared samples reduced with increasing Cu-doping concentrations and the addition of Cu as dopants changed the structural properties of the thin films. Surface morphology was determined through scanning electron microscopy and atomic force microscopy. Results show that the particle size decreased as doping concentration increased. The films have moderate optical transmission (up to 82.4% at 800nm), and the transmittance, absorption coefficient and energy gap at different Cu-doping concentration were measured and calculated. Results show that Cu-doping decreased the transmittance and energy gap whereas it increased the absorption coefficient. Two peaks were noted with Cu-doping concentration of 0-6wt.%; the first peak was positioned exactly at 320nm ultraviolet emission and the second was positioned at 430-480nm. Moreover, emission bands were noticed in the photoluminescence spectra of Cu:SnO2. The electrical properties of SnO2 films include DC electrical conductivity, showing that the films have two activation energies, namely, Ea1 and Ea2, which increase as Cu-doping concentration increases. Cudoped nanocrystalline SnO2 gas-sensing material has better sensitivity to CO gas compared with pure SnO2.

Final-state effect on x-ray photoelectron spectrum of nominally d1 and n -doped d0 transition-metal oxides

NASA Astrophysics Data System (ADS)

Lin, Chungwei; Posadas, Agham; Hadamek, Tobias; Demkov, Alexander A.

2015-07-01

We investigate the x-ray photoelectron spectroscopy (XPS) of nominally d1 and n -doped d0 transition-metal oxides including NbO2,SrVO3, and LaTiO3 (nominally d1), as well as n -doped SrTiO3 (nominally d0). In the case of single phase d1 oxides, we find that the XPS spectra (specifically photoelectrons from Nb 3 d , V 2 p , Ti 2 p core levels) all display at least two, and sometimes three distinct components, which can be consistently identified as d0,d1, and d2 oxidation states (with decreasing order in binding energy). Electron doping increases the d2 component but decreases the d0 component, whereas hole doping reverses this trend; a single d1 peak is never observed, and the d0 peak is always present even in phase-pure samples. In the case of n -doped SrTiO3, the d1 component appears as a weak shoulder with respect to the main d0 peak. We argue that these multiple peaks should be understood as being due to the final-state effect and are intrinsic to the materials. Their presence does not necessarily imply the existence of spatially localized ions of different oxidation states nor of separate phases. A simple model is provided to illustrate this interpretation, and several experiments are discussed accordingly. The key parameter to determine the relative importance between the initial-state and final-state effects is also pointed out.

Ultrahigh sensitivity of anomalous Hall effect sensor based on Cr-doped Bi 2Te 3 topological insulator thin films

DOE PAGES

Ni, Y.; Zhang, Z.; Nlebedim, I. C.; ...

2016-07-01

Anomalous Hall effect (AHE) was recently discovered in magnetic element-doped topological insulators (TIs), which promises low power consumption and high efficiency spintronics and electronics. This discovery broadens the family of Hall sensors. In this paper, AHE sensors based on Cr-doped Bi 2Te 3 topological insulator thin films are studied with two thicknesses (15 and 65 nm). It is found, in both cases, that ultrahigh Hall sensitivity can be obtained in Cr-doped Bi 2Te 3. Hall sensitivity reaches 1666 Ω/T in the sensor with the 15 nm TI thin film, which is higher than that of the conventional semiconductor HE sensor.more » The AHE of 65 nm sensors is even stronger, which causes the sensitivity increasing to 2620 Ω/T. Furthermore, after comparing Cr-doped Bi 2Te 3 with the previously studied Mn-doped Bi 2Te 3 TI Hall sensor, the sensitivity of the present AHE sensor shows about 60 times higher in 65 nm sensors. Furthermore, the implementation of AHE sensors based on a magnetic-doped TI thin film indicates that the TIs are good candidates for ultrasensitive AHE sensors.« less

Observation of hole hopping via dopant in MoOx-doped organic semiconductors: Mechanism analysis and application for high performance organic light-emitting devices

NASA Astrophysics Data System (ADS)

Qiao, Xianfeng; Chen, Jiangshan; Li, Xinglin; Ma, Dongge

2010-05-01

Conduction mechanism in molybdenum trioxide (MoOx)-doped hole- and electron-type organic semiconductors is investigated. The used hole-transporting materials are N ,N'-diphenyl-N ,N'-bis(1-naphthylphenyl)-1, 1'-biphen4, 4'-diamine, 4',4″-tri(N-carbazolyl)triphenylamine, 4, 4'-N,N-dicarbazole-biphenyl, and pentacene and the used electron-transporting material is (8-quinolinolato) aluminum (Alq3). It can be seen that the hole conductivity is significantly enhanced upon MoOx doping, and more importantly, dominant hole current could be realized in a typical electron-transport material Alq3 by doping MoOx. Hence, high efficiency organic light-emitting devices can also be achieved even using MoOx-doped Alq3 film as hole transporting layer. The mechanism investigation indicates that the MoOx plays an important role in the hole transport. It is showed that the MoOx serves as the hole hopping sites, whereas the used organic materials serve as the transport medium and determine the magnitude of transport current. Furthermore, it is found that doping MoOx into the organic materials also reduces the energy and position disorders of the doped organic films, which are well demonstrated by the study on transport characteristics of the doped films at various temperatures.

Observation of non-Fermi liquid behavior in hole-doped LiFe 1-x V xAs

DOE PAGES

Xing, L. Y.; Shi, X.; Richard, P.; ...

2016-09-28

Here we synthesized a series of V-doped LiFe 1₋xV xAs single crystals. The superconducting transition temperature T c of LiFeAs decreases rapidly at a rate of 7 K per 1% V. The Hall coefficient of LiFeAs switches from negative to positive with 4.2% V doping, showing that V doping introduces hole carriers. This observation is further confirmed by the evaluation of the Fermi surface volume measured by angle-resolved photoemission spectroscopy (ARPES), from which a 0.3 hole doping per V atom introduced is deduced. Interestingly, the introduction of holes does not follow a rigid band shift. We also show that themore » temperature evolution of the electrical resistivity as a function of doping is consistent with a crossover from a Fermi liquid to a non-Fermi liquid. Our ARPES data indicate that the non-Fermi liquid behavior is mostly enhanced when one of the hole d xz/dyz Fermi surfaces is well nested by the antiferromagnetic wave vector to the inner electron Fermi surface pocket with the d xy orbital character. In conclusion, the magnetic susceptibility of LiFe 1₋xV xAs suggests the presence of strong magnetic impurities following V doping, thus providing a natural explanation to the rapid suppression of superconductivity upon V doping.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Yi; Wang, Ziyu; Liu, Shuo

Chromium dioxide (CrO{sub 2}) is an ideal material for spin electronic devices since it has almost 100% spin polarization near Fermi level. However, it is thermally unstable and easily decomposes to Cr{sub 2}O{sub 3} even at room temperature. In this study, we try to improve the thermal stability of CrO{sub 2} thin films by doping with Sn whose oxide has the same structure as CrO{sub 2}. High quality epitaxial CrO{sub 2} and Sn-doped CrO{sub 2} films were grown on single crystalline TiO{sub 2} (100) substrates by chemical vapor deposition. Sn{sup 4+} ions were believed to be doped into CrO{sub 2}more » lattice and take the lattice positions of Cr{sup 4+}. The magnetic measurements show that Sn-doping leads to a decrease of magnetocrystalline anisotropy. The thermal stabilities of the films were evaluated by annealing the films at different temperatures. Sn-doped films can withstand a temperature up to 510 °C, significantly higher than what undoped films can do (lower than 435 °C), which suggests that Sn-doping indeed enhances the thermal stability of CrO{sub 2} films. Our study also indicates that Sn-doping may not change the essential half metallic properties of CrO{sub 2}. Therefore, Sn-doped CrO{sub 2} is expected to be very promising for applications in spintronic devices.« less

Observation of non-Fermi liquid behavior in hole-doped LiFe 1-x V xAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xing, L. Y.; Shi, X.; Richard, P.

Here we synthesized a series of V-doped LiFe 1₋xV xAs single crystals. The superconducting transition temperature T c of LiFeAs decreases rapidly at a rate of 7 K per 1% V. The Hall coefficient of LiFeAs switches from negative to positive with 4.2% V doping, showing that V doping introduces hole carriers. This observation is further confirmed by the evaluation of the Fermi surface volume measured by angle-resolved photoemission spectroscopy (ARPES), from which a 0.3 hole doping per V atom introduced is deduced. Interestingly, the introduction of holes does not follow a rigid band shift. We also show that themore » temperature evolution of the electrical resistivity as a function of doping is consistent with a crossover from a Fermi liquid to a non-Fermi liquid. Our ARPES data indicate that the non-Fermi liquid behavior is mostly enhanced when one of the hole d xz/dyz Fermi surfaces is well nested by the antiferromagnetic wave vector to the inner electron Fermi surface pocket with the d xy orbital character. In conclusion, the magnetic susceptibility of LiFe 1₋xV xAs suggests the presence of strong magnetic impurities following V doping, thus providing a natural explanation to the rapid suppression of superconductivity upon V doping.« less

Studies on visible light photocatalytic and antibacterial activities of nanostructured cobalt doped ZnO thin films prepared by sol-gel spin coating method.

PubMed

Poongodi, G; Anandan, P; Kumar, R Mohan; Jayavel, R

2015-09-05

Nanostructured cobalt doped ZnO thin films were deposited on glass substrate by sol-gel spin coating technique and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and UV-Vis spectroscopy. The XRD results showed that the thin films were well crystalline with hexagonal wurtzite structure. The results of EDAX and XPS revealed that Co was doped into ZnO structure. FESEM images revealed that the films possess granular morphology without any crack and confirm that Co doping decreases the grain size. UV-Vis transmission spectra show that the substitution of Co in ZnO leads to band gap narrowing. The Co doped ZnO films were found to exhibit improved photocatalytic activity for the degradation of methylene blue dye under visible light in comparison with the undoped ZnO film. The decrease in grain size and extending light absorption towards the visible region by Co doping in ZnO film contribute equally to the improved photocatalytic activity. The bactericidal efficiency of Co doped ZnO films were investigated against a Gram negative (Escherichia coli) and a Gram positive (Staphylococcus aureus) bacteria. The optical density (OD) measurement showed better bactericidal activity at higher level of Co doping in ZnO. Copyright © 2015 Elsevier B.V. All rights reserved.

Magneto-optical spectrum and the effective excitonic Zeeman splitting energies of Mn and Co-doped CdSe nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiong, Wen, E-mail: wenxiong@cqu.edu.cn; Chen, Wensuo

2013-12-21

The electronic structure of Mn and Co-doped CdSe nanowires are calculated based on the six-band k·p effective-mass theory. Through the calculation, it is found that the splitting energies of the degenerate hole states in Mn-doped CdSe nanowires are larger than that in Co-doped CdSe nanowires when the concentration of these two kinds of magnetic ions is the same. In order to analysis the magneto-optical spectrum of Mn and Co-doped CdSe nanowires, the four lowest electron states and the four highest hole states are sorted when the magnetic field is applied, and the 10 lowest optical transitions between the conduction subbandsmore » and the valence subbands at the Γ point in Mn and Co-doped CdSe nanowires are shown in the paper, it is found that the order of the optical transitions at the Γ point almost do not change although two different kinds of magnetic ions are doped in CdSe nanowires. Finally, the effective excitonic Zeeman splitting energies at the Γ point are found to increase almost linearly with the increase of the concentration of the magnetic ions and the magnetic field; meanwhile, the giant positive effective excitonic g factors in Mn and Co-doped CdSe nanowires are predicted based on our theoretical calculation.« less

High-rate and ultralong cycle-life LiFePO4 nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Feng, Jinpeng; Wang, Youlan

2016-12-01

An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO4. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO4 is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO4@B0.4-C can reach 164.1 mAh g-1 at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g-1). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g-1 and can be maintained at 124.5 mAh g-1 after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO4@B-C composite for high-performance lithium-ion batteries.

Substitutional Cd and Cd-Oxygen Vacancy Complexes in ZrO2 and Ce-doped ZrO_2

NASA Astrophysics Data System (ADS)

Zacate, Matthew O.; Karapetrova, E.; Platzer, R.; Gardner, J. A.; Evenson, W. E.; Sommers, J. A.

1996-03-01

We are using Perturbed Angular Correlation Spectroscopy (PAC) to study oxygen vacancy (V_O) dynamics in tetragonal ZrO2 and Ce-doped ZrO_2. PAC requires a radioactive probe atom, Cd in this study, which sits substitutionally for a Zr ion. Cd is doubly-negatively charged relative to the lattice and attracts doubly-positively charged V_Os. Pure tetragonal zirconia exists only above 950 ^circC and in this temperature range, the V_Os are very mobile. Above 950 ^circC we observe V_Os rapidly hopping about the Cd allowing us to determine the VO concentration and the trapping energy. We have been Ce-doping to stabilize the tetragonal phase to lower temperature to determine the electric field gradient the Cd experiences due to a stationary V_O. As a consequence of the Ce-doping, we observe a local lattice distortion about the Cd which increases with Ce-doping.

Lattice Location of Mg in GaN: A Fresh Look at Doping Limitations.

PubMed

Wahl, U; Amorim, L M; Augustyns, V; Costa, A; David-Bosne, E; Lima, T A L; Lippertz, G; Correia, J G; da Silva, M R; Kappers, M J; Temst, K; Vantomme, A; Pereira, L M C

2017-03-03

Radioactive ^{27}Mg (t_{1/2}=9.5  min) was implanted into GaN of different doping types at CERN's ISOLDE facility and its lattice site determined via β^{-} emission channeling. Following implantations between room temperature and 800 °C, the majority of ^{27}Mg occupies the substitutional Ga sites; however, below 350 °C significant fractions were also found on interstitial positions ∼0.6  Å from ideal octahedral sites. The interstitial fraction of Mg was correlated with the GaN doping character, being highest (up to 31%) in samples doped p type with 2×10^{19}  cm^{-3} stable Mg during epilayer growth, and lowest in Si-doped n-GaN, thus giving direct evidence for the amphoteric character of Mg. Implanting above 350 °C converts interstitial ^{27}Mg to substitutional Ga sites, which allows estimating the activation energy for migration of interstitial Mg as between 1.3 and 2.0 eV.

Lattice Location of Mg in GaN: A Fresh Look at Doping Limitations

NASA Astrophysics Data System (ADS)

Wahl, U.; Amorim, L. M.; Augustyns, V.; Costa, A.; David-Bosne, E.; Lima, T. A. L.; Lippertz, G.; Correia, J. G.; da Silva, M. R.; Kappers, M. J.; Temst, K.; Vantomme, A.; Pereira, L. M. C.

2017-03-01

Radioactive 27Mg (t1 /2=9.5 min ) was implanted into GaN of different doping types at CERN's ISOLDE facility and its lattice site determined via β- emission channeling. Following implantations between room temperature and 800 °C , the majority of 27Mg occupies the substitutional Ga sites; however, below 350 °C significant fractions were also found on interstitial positions ˜0.6 Å from ideal octahedral sites. The interstitial fraction of Mg was correlated with the GaN doping character, being highest (up to 31%) in samples doped p type with 2 ×1019 cm-3 stable Mg during epilayer growth, and lowest in Si-doped n -GaN, thus giving direct evidence for the amphoteric character of Mg. Implanting above 350 °C converts interstitial 27Mg to substitutional Ga sites, which allows estimating the activation energy for migration of interstitial Mg as between 1.3 and 2.0 eV.

Weak doping dependence of the antiferromagnetic coupling between nearest-neighbor Mn2 + spins in (Ba1 -xKx) (Zn1-yMny) 2As2

NASA Astrophysics Data System (ADS)

Surmach, M. A.; Chen, B. J.; Deng, Z.; Jin, C. Q.; Glasbrenner, J. K.; Mazin, I. I.; Ivanov, A.; Inosov, D. S.

2018-03-01

Dilute magnetic semiconductors (DMS) are nonmagnetic semiconductors doped with magnetic transition metals. The recently discovered DMS material (Ba1 -xKx) (Zn1-yMny) 2As2 offers a unique and versatile control of the Curie temperature TC by decoupling the spin (Mn2 +, S =5 /2 ) and charge (K+) doping in different crystallographic layers. In an attempt to describe from first-principles calculations the role of hole doping in stabilizing ferromagnetic order, it was recently suggested that the antiferromagnetic exchange coupling J between the nearest-neighbor Mn ions would experience a nearly twofold suppression upon doping 20% of holes by potassium substitution. At the same time, further-neighbor interactions become increasingly ferromagnetic upon doping, leading to a rapid increase of TC. Using inelastic neutron scattering, we have observed a localized magnetic excitation at about 13 meV associated with the destruction of the nearest-neighbor Mn-Mn singlet ground state. Hole doping results in a notable broadening of this peak, evidencing significant particle-hole damping, but with only a minor change in the peak position. We argue that this unexpected result can be explained by a combined effect of superexchange and double-exchange interactions.

Comparative physical, chemical and biological assessment of simple and titanium-doped ovine dentine-derived hydroxyapatite coatings fabricated by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Duta, L.; Mihailescu, N.; Popescu, A. C.; Luculescu, C. R.; Mihailescu, I. N.; Çetin, G.; Gunduz, O.; Oktar, F. N.; Popa, A. C.; Kuncser, A.; Besleaga, C.; Stan, G. E.

2017-08-01

We report on the synthesis by Pulsed Laser Deposition of simple and Ti doped hydroxyapatite thin films of biological (ovine dentine) origin. Detailed physical, chemical, mechanical and biological investigations were performed. Morphological examination of films showed a surface composed of spheroidal particulates, of micronic size. Compositional analyses pointed to the presence of typical natural doping elements of bone, along with a slight non-stoichiometry of the deposited films. Structural investigations proved the monophasic hydroxyapatite nature of both simple and Ti doped films. Ti doping of biological hydroxyapatite induced an overall downgrade of the films crystallinity together with an increase of the films roughness. It is to be emphasized that bonding strength values measured at film/Ti substrate interface were superior to the minimum value imposed by International Standards regulating the load-bearing implant coatings. In vitro tests on Ti doped structures, compared to simple ones, revealed excellent biocompatibility in human mesenchymal stem cell cultures, a higher proliferation rate and a good cytocompatibility. The obtained results aim to elucidate the overall positive role of Ti doping on the hydroxyapatite films performance, and demonstrate the possibility to use this novel type of coatings as feasible materials for future implantology applications.

Structural and electrical properties of Ge-on-Si(0 0 1) layers with ultra heavy n-type doping grown by MBE

NASA Astrophysics Data System (ADS)

Yurasov, D. V.; Antonov, A. V.; Drozdov, M. N.; Yunin, P. A.; Andreev, B. A.; Bushuykin, P. A.; Baydakova, N. A.; Novikov, A. V.

2018-06-01

In this paper we report about the formation of ultra heavy doped n-Ge layers on Si(0 0 1) substrates by molecular beam epitaxy and their characterization by different independent techniques. Combined study of structural and electrical properties of fabricated layers using secondary ion mass spectroscopy, X-ray diffraction, Hall effect and reflection measurements was carried out and it has revealed the achievable charge carrier densities exceeding 1020 cm-3 without deterioration of crystalline quality of such doped layers. It was also shown that X-ray analysis can be used as a fast, reliable and non-destructive method for evaluation of the electrically active Sb concentration in heavy doped Ge layers. The appropriate set of doping density allowed to adjust the plasmonic resonance position in Ge:Sb layers in a rather wide range reaching the wavelength of 3.6 μm for the highest doping concentration. Room temperature photoluminescence confirmed the high crystalline quality of such doped layers. Our results indicated the attainability of high electron concentration in Ge:Sb layers grown on Si substrates without crystalline quality deterioration which may find potential applications in the fields of Si-based photonics and mid-IR plasmonics.

Theory of a Carbon-Nanotube Polarization Switch

NASA Astrophysics Data System (ADS)

Sasaki, Ken-ichi; Tokura, Yasuhiro

2018-03-01

Recently, it was suggested that the polarization dependence of light absorption to a single-walled carbon nanotube is altered by carrier doping. We specify theoretically the doping level at which the polarization anisotropy is reversed by plasmon excitation. The plasmon energy is mainly determined by the diameter of a nanotube because pseudospin makes the energy independent of the details of the band structure. We find that the effect of doping on the Coulomb interaction appears through the screened exchange energy, which can be observed as changes in the absorption peak positions. Our results strongly suggest the possibility that oriented nanotubes function as a polarization switch.

An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb0.25Bi2Se3

NASA Astrophysics Data System (ADS)

Smylie, M. P.; Willa, K.; Ryan, K.; Claus, H.; Kwok, W.-K.; Qiu, Y.; Hor, Y. S.; Welp, U.

2017-12-01

We report a positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator Nb0.25Bi2Se3 via dc SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to reports on the homologues CuxBi2Se3 and SrxBi2Se3 where smooth suppression of Tc is observed. This difference may be attributable to an electronic structure composed of multiple bands whereas the other materials in the superconducting doped Bi2Se3 family are believed to be single-band.

Electronic structure evolution in doping of fullerene (C{sub 60}) by ultra-thin layer molybdenum trioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Chenggong; Wang, Congcong; Kauppi, John

2015-08-28

Ultra-thin layer molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The highest occupied molecular orbital (HOMO) can be observed directly with UPS. It is observed that the Fermi level position in fullerene is modified by ultra-thin-layer molybdenum oxide doping, and the HOMO onset is shifted to less than 1.3 eV below the Fermi level. The XPS results indicate that charge transfer was observed from the C{sub 60} to MoO{sub x} and Mo{sup 6+} oxides is the basis as hole dopants.

An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb 0.25Bi 2Se 3

DOE PAGES

Smylie, M. P.; Willa, K.; Ryan, K.; ...

2017-10-26

Here, we report a positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator Nb 0.25Bi 2Se 3 via dc SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to reports on the homologues Cu xBi 2Se 3 and Sr xBi 2Se 3 where smooth suppression of T c is observed. This difference may be attributable to an electronic structure composed of multiple bands whereas the other materials in the superconducting doped Bi 2Se 3 family are believed to be single-band.

Effects of ionizing radiations on the optical properties of ionic copper-activated sol-gel silica glasses

NASA Astrophysics Data System (ADS)

Al Helou, Nissrine; El Hamzaoui, Hicham; Capoen, Bruno; Ouerdane, Youcef; Boukenter, Aziz; Girard, Sylvain; Bouazaoui, Mohamed

2018-01-01

Studying the impact of radiations on doped silica glasses is essential for several technological applications. Herein, bulk silica glasses, activated with various concentrations of luminescent monovalent copper (Cu+), have been prepared using the sol-gel technique. Thereafter, these glasses were subjected to X- or γ-rays irradiation at 1 MGy(SiO2) accumulated dose. The effect of these ionizing radiations on the optical properties of these glasses, as a function of the Cu-doping content, were investigated using optical absorption and photoluminescence spectroscopies. Before any irradiation, the glass with the lowest copper concentration exhibits blue and green luminescence bands under UV excitation, suggesting that Cu+ ions occupy both cubic and tetragonal symmetry sites. However, at higher Cu-doping level, only the green emission band exists. Moreover, we showed that the hydroxyl content decreases with increasing copper doping concentration. Both X and γ radiation exposures induced visible absorption due to HC1 color centers in the highly Cu-doped glasses. In the case of the lower Cu-doped glass, the Cu+ sites with a cubic symmetry are transformed into sites with tetragonal symmetry.

Numerically exploring the 1D-2D dimensional crossover on spin dynamics in the doped Hubbard model

DOE PAGES

Kung, Y. F.; Bazin, C.; Wohlfeld, K.; ...

2017-11-02

Using determinant quantum Monte Carlo (DQMC) simulations, we systematically study the doping dependence of the crossover from one to two dimensions and its impact on the magnetic properties of the Hubbard model. A square lattice of chains is used, in which the dimensionality can be tuned by varying the interchain coupling t ⊥. The dynamical spin structure factor and static quantities, such as the static spin susceptibility and nearest-neighbor spin correlation function, are characterized in the one- and two-dimensional limits as a benchmark. When the dimensionality is tuned between these limits, the magnetic properties, while evolving smoothly from one tomore » two dimensions, drastically change regardless of the doping level. This suggests that the spin excitations in the two-dimensional Hubbard model, even in the heavily doped case, cannot be explained using the spinon picture known from one dimension. In conclusion, the DQMC calculations are complemented by cluster perturbation theory studies to form a more complete picture of how the crossover occurs as a function of doping and how doped holes impact magnetic order.« less

Effect of the next-nearest-neighbor hopping on the charge collective modes in the paramagnetic phase of the Hubbard model

NASA Astrophysics Data System (ADS)

Dao, Vu Hung; Frésard, Raymond

2017-10-01

The charge dynamical response function of the t-t'-U Hubbard model is investigated on the square lattice in the thermodynamical limit. The correlation function is calculated from Gaussian fluctuations around the paramagnetic saddle-point within the Kotliar and Ruckenstein slave-boson representation. The next-nearest-neighbor hopping only slightly affects the renormalization of the quasiparticle mass. In contrast a negative t'/t notably decreases (increases) their velocity, and hence the zero-sound velocity, at positive (negative) doping. For low (high) density n ≲ 0.5 (n ≳ 1.5) we find that it enhances (reduces) the damping of the zero-sound mode. Furthermore it softens (hardens) the upper-Hubbard-band collective mode at positive (negative) doping. It is also shown that our results differ markedly from the random-phase approximation in the strong-coupling limit, even at high doping, while they compare favorably with existing quantum Monte Carlo numerical simulations.

Optical absorption of Mg-doped layers and InGaN quantum wells on c-plane and semipolar GaN structures

NASA Astrophysics Data System (ADS)

Sizov, Dmitry; Bhat, Rajaram; Zah, Chung-en

2013-05-01

We studied optical absorption of Mg-doped AlInGaN layers using excitation-position dependent and polarization resolved photoluminescence from the slab-waveguide edge of a laser structure. The major absorption in the Mg-doped layers was found only when p-doping is activated. It increases with the removal of residual hydrogen, which in case of Mg doping is a p-type passivation impurity, and reversibly disappears after passivation by hydrogen. This absorption is weakly wavelength and temperature dependent, and isotropic. This can be attributed to acceptor-bound hole absorption, because those holes concentration is nearly equal to that of activated acceptors and weakly temperature dependent (unlike the free hole concentration, which is much lower and is an exponential function of temperature due to high ionization energy). The cross section of photon absorption on such activated acceptor was quantified to be in the order of 10-17 cm-2. The absorption cross section of free electrons was found to be at least one order of magnitude lower and below detection limit. The same technique was used to experimentally quantify band structure polarization components along basis directions for green InGaN quantum wells (QWs) grown on c- and semipolar planes. The A1 and B1 valence subbands of c-plane QW were found to comprise mostly |X⟩ and |Y⟩ states. There was rather minor amount of |Z⟩ states with average square fraction of only 0.02. In (20-21) plane, due to small band anticrossing near gamma-point, we observed highly polarized absorption edges of A1- and B1-subbands consisting mainly of |Y⟩ and |X⟩ states, respectively, and found their energy splitting to be ˜40 meV. For (11-22) plane with smaller band splitting and polarization, we observed polarization switching with indium (In) concentration greater than 30% in the QW (or photon energy less than 2.3 eV). We confirmed our study of valence band structures by optical gain measurements.

Numerical analysis of band tails in nanowires and their effects on the performance of tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Tanaka, Takahisa; Uchida, Ken

2018-06-01

Band tails in heavily doped semiconductors are one of the important parameters that determine transfer characteristics of tunneling field-effect transistors. In this study, doping concentration and doing profile dependences of band tails in heavily doped Si nanowires were analyzed by a nonequilibrium Green function method. From the calculated band tails, transfer characteristics of nanowire tunnel field-effect transistors were numerically analyzed by Wentzel–Kramer–Brillouin approximation with exponential barriers. The calculated transfer characteristics demonstrate that the band tails induced by dopants degrade the subthreshold slopes of Si nanowires from 5 to 56 mV/dec in the worst case. On the other hand, surface doping leads to a high drain current while maintaining a small subthreshold slope.

A DFT study of pure and lithium doped gold clusters

NASA Astrophysics Data System (ADS)

Rani, Babita

2018-05-01

First principles calculations on Aun and Aun-1Li (n=1-6) clusters are performed to understand the effect of size and composition on their structural and energy parameters. It has been found that binding energy increases continuously with increase in the size of pure Aun and doped Aun-1Li clusters and attains its maximum at n=6. Also, Li doping results in the improvement of relative stabilities of pure gold clusters, owing to higher bond strength (i.e. shorter bond length) of Au- Li bond as compared to Au-Au bonds. Moreover, Aun-1Li clusters are found to be more compact. Structural transformations are observed in case of gold clusters doped with Li atom which may affect their application in the field of catalysis.

Sports Nutrition and Doping Factors in Synchronized Swimming: Parallel Analysis among Athletes and Coaches.

PubMed

Furjan Mandic, Gordana; Peric, Mia; Krzelj, Lucijana; Stankovic, Sladana; Zenic, Natasa

2013-01-01

Although nutrition and doping are important factors in sports, neither is often investigated in synchronized swimming (Synchro).This study aimed to define and compare Synchro athletes and their coaches on their knowledge of sports nutrition (KSN)and knowledge of doping (KD); and to study factors related to KSN and KD in each of these groups. Additionally, the KSNand KD questionnaires were evaluated for their reliability and validity. Altogether, 82 athletes (17.2 ± 1.92 years of age) and 28 coaches (30.8 ± 5.26 years of age) from Croatia and Serbia were included in the study, with a 99% response rate. The testand retest correlations were 0.94 and 0.90 for the KD and KSN,respectively. Subjects responded equally to 91% queries of the KD and 89% queries of the KSN. Although most of the coache sare highly educated, they declared self-education as the primary source of information about doping and sport-nutrition. Coaches scored higher than their athletes on both questionnaires which defined appropriate discriminative validity of the questionnaires. Variables such as age, sports experience and formal education are positively correlated to KSN and KD scores among athletes. The athletes who scored better on the KD are less prone to doping behavior in the future. These data reinforce the need for systematic educational programs on doping and sports nutrition in synchronized swimming. Special attention should be placed on younger athletes. Key PointsAlthough most of the synchro coaches are highly educated, self-education is declared as the primary source of information about doping and sportnutrition.The knowledge of doping and doping-health hazards are negatively related to potential doping behavior in the future among synchronized swimmersThe data reinforce the need for systematic educational programs on doping and sports nutrition in synchronized swimming.We advocate improving the knowledge of sports nutrition among older coaches and the knowledge of doping among younger coaches, while among athletes,younger swimmers should be targeted.

Using response-time latencies to measure athletes' doping attitudes: the brief implicit attitude test identifies substance abuse in bodybuilders.

PubMed

Brand, Ralf; Wolff, Wanja; Thieme, Detlef

2014-09-10

Knowing and, if necessary, altering competitive athletes' real attitudes towards the use of banned performance-enhancing substances is an important goal of worldwide doping prevention efforts. However athletes will not always be willing to reporting their real opinions. Reaction time-based attitude tests help conceal the ultimate goal of measurement from the participant and impede strategic answering. This study investigated how well a reaction time-based attitude test discriminated between athletes who were doping and those who were not. We investigated whether athletes whose urine samples were positive for at least one banned substance (dopers) evaluated doping more favorably than clean athletes (non-dopers). We approached a group of 61 male competitive bodybuilders and collected urine samples for biochemical testing. The pictorial doping Brief Implicit Association Test (BIAT) was used for attitude measurement. This test quantifies the difference in response latencies (in milliseconds) to stimuli representing related concepts (i.e. doping-dislike/like-[health food]). Prohibited substances were found in 43% of all tested urine samples. Dopers had more lenient attitudes to doping than non-dopers (Hedges's g = -0.76). D-scores greater than -0.57 (CI95 = -0.72 to -0.46) might be indicative of a rather lenient attitude to doping. In urine samples evidence of administration of combinations of substances, complementary administration of substances to treat side effects and use of stimulants to promote loss of body fat was common. This study demonstrates that athletes' attitudes to doping can be assessed indirectly with a reaction time-based test, and that their attitudes are related to their behavior. Although bodybuilders may be more willing to reveal their attitude to doping than other athletes, these results still provide evidence that the pictorial doping BIAT may be useful in athletes from other sports, perhaps as a complementary measure in evaluations of the effectiveness of doping prevention interventions.

Sports Nutrition and Doping Factors in Synchronized Swimming: Parallel Analysis among Athletes and Coaches

PubMed Central

Furjan Mandic, Gordana; Peric, Mia; Krzelj, Lucijana; Stankovic, Sladana; Zenic, Natasa

2013-01-01

Although nutrition and doping are important factors in sports, neither is often investigated in synchronized swimming (Synchro).This study aimed to define and compare Synchro athletes and their coaches on their knowledge of sports nutrition (KSN)and knowledge of doping (KD); and to study factors related to KSN and KD in each of these groups. Additionally, the KSNand KD questionnaires were evaluated for their reliability and validity. Altogether, 82 athletes (17.2 ± 1.92 years of age) and 28 coaches (30.8 ± 5.26 years of age) from Croatia and Serbia were included in the study, with a 99% response rate. The testand retest correlations were 0.94 and 0.90 for the KD and KSN,respectively. Subjects responded equally to 91% queries of the KD and 89% queries of the KSN. Although most of the coache sare highly educated, they declared self-education as the primary source of information about doping and sport-nutrition. Coaches scored higher than their athletes on both questionnaires which defined appropriate discriminative validity of the questionnaires. Variables such as age, sports experience and formal education are positively correlated to KSN and KD scores among athletes. The athletes who scored better on the KD are less prone to doping behavior in the future. These data reinforce the need for systematic educational programs on doping and sports nutrition in synchronized swimming. Special attention should be placed on younger athletes. Key Points Although most of the synchro coaches are highly educated, self-education is declared as the primary source of information about doping and sportnutrition. The knowledge of doping and doping-health hazards are negatively related to potential doping behavior in the future among synchronized swimmers The data reinforce the need for systematic educational programs on doping and sports nutrition in synchronized swimming. We advocate improving the knowledge of sports nutrition among older coaches and the knowledge of doping among younger coaches, while among athletes,younger swimmers should be targeted PMID:24421736

Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Mahesh; Central Research Laboratory, Bharat Electronics, Bangalore 560 013; Bhat, Thirumaleshwara N.

Highlights: ► The n-type GaN layers were grown by plasma-assisted molecular beam epitaxy. ► The optical characteristics of a donor level in Si-doped GaN were studied. ► Activation energy of a Si-related donor was estimated from temperature dependent PL measurements. ► PL peak positions, FWHM of PL and activation energies are found to be proportional to the cube root of carrier density. ► The involvement of donor levels is supported by the temperature-dependent electron concentration measurements. -- Abstract: The n-type GaN layers were grown by plasma-assisted MBE and either intentionally doped with Si or unintentionally doped. The optical characteristics ofmore » a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration. Temperature dependent PL measurements allowed us to estimate the activation energy of a Si-related donor from temperature-induced decay of PL intensity. PL peak positions, full width at half maximum of PL and activation energies are found to be proportional to the cube root of carrier density. The involvement of donor levels is supported by the temperature-dependent electron concentration measurements.« less

[Doping: health risks and relation to addictive behaviors].

PubMed

Siri, Françoise; Roques, Bernard P

2003-11-01

The paper presents the health hazards of the major doping substances and raises some questions about the relationship between doping and addictive behavior. Current definitions of doping and addictive behavior are examined. The paper's goal is: 1- to assess the risks of neurotoxicity and overall toxicity of doping substances: stimulants, narcotics (seldom used as doping substances), and hormones, and assess their addictive potential; 2- to present available data on drug-dependent patients with a record of early prolonged and intensive physical activity or athletic practice. Some doping substances present high risks for health at large doses, but usually low addictive potential and neurotoxicity. Dependency on doping substances and drift towards dependency to addictive drugs, if any, are therefore determined by genetic and environmental factors. A significant susceptibility to drug dependence has been observed in some cases of very intensive and competitive practice. Over-representation of intensive and competitive athletic antecedents among some drug-dependent patients could be accounted for in either of two ways. On the first account, the causal factor is a sensation-seeking character trait, with a likely genetic component, which predisposes the individual to the use of drugs or doping substances, as the opportunities arise. On the second account, the sudden interruption of intensive practice, and of the associated organic stress and hypersensitization of the hedonic pathway, creates a weaning syndrome and leads to the search for relief through drugs. Further exploration of this hypothesis is called for.

Magnetization reversal process and evaluation of thermal stability factor in Cu doped granular L10 FePt films

NASA Astrophysics Data System (ADS)

Jain, S.; Papusoi, C.; Admana, R.; Yuan, H.; Acharya, R.

2018-05-01

Curie temperature TC distributions and magnetization reversal mechanism in Cu doped L10 FePt granular films is investigated as a function of film thickness in the range of ˜5-12 nm with Cu mol. % varying in the range of 0%-6%. It is shown that Cu doping increases the FePt tetragonality and chemical ordering. For Cu doped FePt-X films, coercivity (HC) exhibits a non-monotonic behavior with increasing film thickness, i.e., HC increases initially up to tcr ˜ 7 nm, and decreases thereafter. We attribute this behavior to the change in magnetization reversal mechanism from coherent to an incoherent (domain-wall driven) mode. While in un-doped films, the domain-walls nucleate at the grain boundaries, in doped films the Cu atoms may act as domain-wall nucleation and pinning sites, isolating magnetic spin clusters of reduced dimensionality with respect to the physical grain size. This is experimentally supported by a much poorer dependence of the AC susceptibility (both, real and imaginary components) on the film thickness above 7 nm than in the case of un-doped films. The formation of magnetic spin clusters inside the grains as a consequence of the reduced coupling between Fe-Fe and Fe-Pt-Fe atoms with increasing Cu doping can explain the experimentally evidenced reduction of both, the film Curie temperature, TC, and intrinsic anisotropy energy density, KC, with increasing Cu doping.

Tailoring the electronic structure of β-Ga2O3 by non-metal doping from hybrid density functional theory calculations.

PubMed

Guo, Weiyan; Guo, Yating; Dong, Hao; Zhou, Xin

2015-02-28

A systematic study using density functional theory has been performed for β-Ga2O3 doped with non-metal elements X (X = C, N, F, Si, P, S, Cl, Se, Br, and I) to evaluate the effect of doping on the band edges and photocatalytic activity of β-Ga2O3. The utilization of a more reliable hybrid density functional, as prescribed by Heyd, Scuseria and Ernzerhof, is found to be effective in predicting the band gap of β-Ga2O3 (4.5 eV), in agreement with the experimental result (4.59 eV). Based on the relaxed structures of X-doped systems, the defect formation energies and the plots of density of states have been calculated to analyze the band edges, the band gap states and the preferred doping sites. Our results show that the doping is energetically favored under Ga-rich growth conditions with respect to O-rich growth conditions. It is easier to replace the threefold coordinated O atom with non-metal elements compared to the fourfold coordinated O atom. X-doped systems (X = C, Si, P) show no change in the band gap, with the presence of discrete midgap states, which have adverse effect on the photocatalytic properties. The photocatalytic redox ability can be improved to a certain extent by doping with N, S, Cl, Se, Br, and I. The band alignments for Se-doped and I-doped β-Ga2O3 are well positioned for the feasibility of both photo-oxidation and photo-reduction of water, which are promising photocatalysts for water splitting in the visible region.

Cellular Response to Doping of High Porosity Foamed Alumina with Ca, P, Mg, and Si.

PubMed

Soh, Edwin; Kolos, Elizabeth; Ruys, Andrew J

2015-03-13

Foamed alumina was previously synthesised by direct foaming of sulphate salt blends varying ammonium mole fraction (AMF), foaming heating rate and sintering temperature. The optimal product was produced with 0.33AMF, foaming at 100 °C/h and sintering at 1600 °C. This product attained high porosity of 94.39%, large average pore size of 300 µm and the highest compressive strength of 384 kPa. To improve bioactivity, doping of porous alumina by soaking in dilute or saturated solutions of Ca, P, Mg, CaP or CaP + Mg was done. Saturated solutions of Ca, P, Mg, CaP and CaP + Mg were made with excess salt in distilled water and decanted. Dilute solutions were made by diluting the 100% solution to 10% concentration. Doping with Si was done using the sol gel method at 100% concentration only. Cell culture was carried out with MG63 osteosarcoma cells. Cellular response to the Si and P doped samples was positive with high cell populations and cell layer formation. The impact of doping with phosphate produced a result not previously reported. The cellular response showed that both Si and P doping improved the biocompatibility of the foamed alumina.

Optical properties of pure and PbSe doped TiS2 nanodiscs

NASA Astrophysics Data System (ADS)

Parvaz, M.; Islamuddin; Khan, Zishan H.

2018-06-01

Titanium disulfide, being one of the popular transition-metal dichalcogenide (TMD) materials, shows wonderful properties owing to tunable optical band gap. Pure and PbSe doped titanium disulfide nanodiscs have been synthesized by solid-state reaction method. FESEM, TEM and Raman images confirm the synthesis of nanodiscs. XRD spectra suggest the polycrystalline structure of as-prepared as well as PbSe doped TiS2 nanodiscs. PL spectra of the as-synthesized nanodiscs has been studied in the wavelength range of (300–550 nm), at room temperature. The position of the peak shifts towards the lower wavelength (blue shift) and intensity of the PL increases after the doping of PbSe, which may be due to a broadening of the optical band gap. UV–vis spectra has been used to calculate optical band gap of pure and PbSe doped titanium disulfide nanodiscs. The calculated value are found to be 1.93 eV and 2.03 eV respectively. Various optical constants such as n and k have been calculated. The value of extinction coefficient (k) of pure and doped titanium disulfide increases while the value of the refractive index (n) decreases with increase in photon energy.

Layered Double Hydroxides: Potential Release-on-Demand Fertilizers for Plant Zinc Nutrition.

PubMed

López-Rayo, Sandra; Imran, Ahmad; Bruun Hansen, Hans Chr; Schjoerring, Jan K; Magid, Jakob

2017-10-11

A novel zinc (Zn) fertilizer concept based on Zn-doped layered double hydroxides (Zn-doped Mg-Fe-LDHs) has been investigated. Zn-doped Mg-Fe-LDHs were synthesized, their chemical composition was analyzed, and their nutrient release was studied in buffered solutions with different pH values. Uptake of Zn by barley (Hordeum vulgare cv. Antonia) was evaluated in short- (8 weeks), medium- (11 weeks), and long-term (28 weeks) experiments in quartz sand and in a calcareous soil enriched with Zn-doped Mg-Fe-LDHs. The Zn release rate of the Zn-doped Mg-Fe-LDHs was described by a first-order kinetics equation showing maximum release at pH 5.2, reaching approximately 45% of the total Zn content. The Zn concentrations in the plants receiving the LDHs were between 2- and 9.5-fold higher than those in plants without Zn addition. A positive effect of the LDHs was also found in soil. This work documents the long-term Zn release capacity of LDHs complying with a release-on-demand behavior and serves as proof-of-concept that Zn-doped Mg-Fe-LDHs can be used as Zn fertilizers.

Magnetoresistance and charge transport in graphene governed by nitrogen dopants.

PubMed

Rein, Markus; Richter, Nils; Parvez, Khaled; Feng, Xinliang; Sachdev, Hermann; Kläui, Mathias; Müllen, Klaus

2015-02-24

We identify the influence of nitrogen-doping on charge- and magnetotransport of single layer graphene by comparing doped and undoped samples. Both sample types are grown by chemical vapor deposition (CVD) and transferred in an identical process onto Si/SiO2 wafers. We characterize the samples by Raman spectroscopy as well as by variable temperature magnetotransport measurements. Over the entire temperature range, the charge transport properties of all undoped samples are in line with literature values. The nitrogen doping instead leads to a 6-fold increase in the charge carrier concentration up to 4 × 10(13) cm(-2) at room temperature, indicating highly effective doping. Additionally it results in the opening of a charge transport gap as revealed by the temperature dependence of the resistance. The magnetotransport exhibits a conspicuous sign change from positive Lorentz magnetoresistance (MR) in undoped to large negative MR that we can attribute to the doping induced disorder. At low magnetic fields, we use quantum transport signals to quantify the transport properties. Analyses based on weak localization models allow us to determine an orders of magnitude decrease in the phase coherence and scattering times for doped samples, since the dopants act as effective scattering centers.

Significant enhancement of compositional and superconducting homogeneity in Ti rather than Ta-doped Nb 3Sn

DOE PAGES

Tarantini, C.; Sung, Z. -H.; Lee, P. J.; ...

2016-01-25

Nb 3Sn wires are now very close to their final optimization but despite its classical nature, detailed understanding of the role of Ta and Ti doping in the A15 is not fully understood. Long thought to be essentially equivalent in their influence on H c2, they were interchangeably applied. Here we show that Ti produces significantly more homogeneous chemical and superconducting properties. Despite Ta-doped samples having a slightly higher T c onset in zero-field, they always have a wider Tc-distribution. In particular, whereas the Ta-doped A15 has a T c-distribution extending from 18 down to 5-6 K (the lowest expectedmore » Tc for the binary A15 phase), the Ti-doped samples have no A15 phase with T c below ~12 K. The much narrower T c distribution in the Ti-doped samples has a positive effect on their in-field T c-distribution too, leading to an extrapolated μ0H c2(0) 2 Tesla larger than the Ta-doped one. Ti-doping also appears to be very homogeneous even when the Sn content is reduced in order to inhibit breakdown of the diffusion barriers in very high Jc conductors. As a result, the enhanced homogeneity of the Ti-doped samples appears to result from its assistance of rapid diffusion of Sn into the filaments and by its incorporation into the A15 phase interchangeably with Sn on the Sn sites of the A15 phase.« less

A first-principles study of the preventive effects of Al and Mg doping on the degradation in LiNi0.8Co0.1Mn0.1O2 cathode materials.

PubMed

Min, Kyoungmin; Seo, Seung-Woo; Song, You Young; Lee, Hyo Sug; Cho, Eunseog

2017-01-18

First-principles calculations have been used to investigate the effects of Al and Mg doping on the prevention of degradation phenomena in Li(Ni 0.8 Co 0.1 Mn 0.1 )O 2 cathode materials. Specifically, we have examined the effects of dopants on the suppression of oxygen evolution and cation disordering, as well as their correlation. It is found that Al doping can suppress the formation of oxygen vacancies effectively, while Mg doping prevents the cation disordering behaviors, i.e., excess Ni and Li/Ni exchange, and Ni migration. This study also demonstrates that formation of oxygen vacancies can facilitate the construction of the cation disordering, and vice versa. Delithiation can increase the probabilities of formation of all defect types, especially oxygen vacancies. When oxygen vacancies are present, Ni can migrate to the Li site during delithiation. However, Al and Mg doping can inhibit Ni migration, even in structures with preformed oxygen defects. The analysis of atomic charge variations during delithiation demonstrates that the degree of oxidation behavior in oxygen atoms is alleviated in the case of Al doping, indicating the enhanced oxygen stability in this structure. In addition, changes in the lattice parameters during delithiation are suppressed in the Mg-doped structure, which suggests that Mg doping may improve the lattice stability.

Fast analysis of doping agents in urine by ultra-high-pressure liquid chromatography-quadrupole time-of-flight mass spectrometry I. Screening analysis.

PubMed

Badoud, F; Grata, E; Perrenoud, L; Avois, L; Saugy, M; Rudaz, S; Veuthey, J-L

2009-05-15

The general strategy to perform anti-doping analyses of urine samples starts with the screening for a wide range of compounds. This step should be fast, generic and able to detect any sample that may contain a prohibited substance while avoiding false negatives and reducing false positive results. The experiments presented in this work were based on ultra-high-pressure liquid chromatography coupled to hybrid quadrupole time-of-flight mass spectrometry. Thanks to the high sensitivity of the method, urine samples could be diluted 2-fold prior to injection. One hundred and three forbidden substances from various classes (such as stimulants, diuretics, narcotics, anti-estrogens) were analysed on a C(18) reversed-phase column in two gradients of 9min (including two 3min equilibration periods) for positive and negative electrospray ionisation and detected in the MS full scan mode. The automatic identification of analytes was based on retention time and mass accuracy, with an automated tool for peak picking. The method was validated according to the International Standard for Laboratories described in the World Anti-Doping Code and was selective enough to comply with the World Anti-Doping Agency recommendations. In addition, the matrix effect on MS response was measured on all investigated analytes spiked in urine samples. The limits of detection ranged from 1 to 500ng/mL, allowing the identification of all tested compounds in urine. When a sample was reported positive during the screening, a fast additional pre-confirmatory step was performed to reduce the number of confirmatory analyses.

Oxygen adsorption onto pure and doped Al surfaces--the role of surface dopants.

PubMed

Lousada, Cláudio M; Korzhavyi, Pavel A

2015-01-21

Using density functional theory (DFT) with the PBE0 density functional we investigated the role of surface dopants in the molecular and dissociative adsorption of O2 onto Al clusters of types Al50, Al50Alad, Al50X and Al49X, where X represents a dopant atom of the following elements Si, Mg, Cu, Sc, Zr, and Ti. Each dopant atom was placed on the Al(111) surface as an adatom or as a substitutional atom, in the last case replacing a surface Al atom. We found that for the same dopant geometry, the closer is the ionization energy of the dopant element to that of elemental Al, the more exothermic is the dissociative adsorption of O2 and the stronger are the bonds between the resulting O atoms and the surface. Additionally we show that the Mulliken concept of electronegativity can be applied in the prediction of the dissociative adsorption energy of O2 on the doped surfaces. The Mulliken modified second-stage electronegativity of the dopant atom is proportional to the exothermicity of the dissociative adsorption of O2. For the same dopant element in an adatom position the dissociation of O2 is more exothermic when compared to the case where the dopant occupies a substitutional position. These observations are discussed in view of the overlap population densities of states (OPDOS) computed as the overlap between the electronic states of the adsorbate O atoms and the clusters. It is shown that a more covalent character in the bonding between the Al surface and the dopant atom causes a more exothermic dissociation of O2 and stronger bonding with the O atoms when compared to a more ionic character in the bonding between the dopant and the Al surface. The extent of the adsorption site reconstruction is dopant atom dependent and is an important parameter for determining the mode of adsorption, adsorption energy and electronic structure of the product of O2 adsorption. The PBE0 functional could predict the existence of the O2 molecular adsorption product for many of the cases investigated here.

Phase stabilisation of hexagonal barium titanate doped with transition metals: A computational study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dawson, J.A., E-mail: mtp09jd@sheffield.ac.uk; Freeman, C.L.; Harding, J.H.

Interatomic potentials recently developed for the modelling of BaTiO{sub 3} have been used to explore the stabilisation of the hexagonal polymorph of BaTiO{sub 3} by doping with transition metals (namely Mn, Co, Fe and Ni) at the Ti-site. Classical simulations have been completed on both the cubic and hexagonal polymorphs to investigate the energetic consequences of transition metal doping on each polymorph. Ti-site charge compensation mechanisms have been used for the multi-valent transition metal ions and cluster binding energies have been considered. Simulations show a significant energetic gain when doping occurs at Ti sites in the face sharing dimers (Ti{submore » 2} sites) of the hexagonal polymorph compared with the doping of the cubic polymorph. This energetic difference between the two polymorphs is true for all transition metals tested and all charge states and in the case of tri- and tetra-valent dopants negative solution energies are found for the hexagonal polymorph suggesting actual polymorph stabilisation occurs with the incorporation of these ions as observed experimentally. Oxidation during incorporation of Ni{sup 2+} and Fe{sup 3+} ions has also been considered. - Graphical abstract: The representation of the strongest binding energy clusters for tri-valent dopants—(a) Ti{sub 2}/O{sub 1} cluster and (b) Ti{sub 2}/O{sub 2} cluster. Highlights: ► Classical simulations show a significant energetic gain when doping occurs at Ti sites in the face sharing dimers (Ti2 sites) of the hexagonal polymorph compared with the doping of the cubic polymorph. ► This energetic difference between the two polymorphs is true for all transition metals tested and all charge states. ► In the case of tri- and tetra- valent dopants negative solution energies are found for the hexagonal polymorph suggesting actual polymorph stabilisation occurs with the incorporation of these ions.« less

Ag-doped Lithium alumino silicate photostructurable glass for microdevice fabrication

NASA Astrophysics Data System (ADS)

Mishra, Richa; Goswami, Madhumita; Krishnan, Madangopal

2018-04-01

Ag-doped LAS glass of composition (wt.%):74SiO2-6Al2O3-15Li2O-5X (X=other additives) were prepared by melt-quench technique and characterized for thermal and optical properties using DTA and UV-Visible spectrometer. XRD technique was used for phase identification in the heat treated glasses. Glass samples were exposed to UV-light for conversion of Ce3+ to Ce4+ state and Ag+ into Ago metallic state. DTA shows a lower crystallization temperature (Tp) at around 605°C for exposed samples as compared to unexposed base glass which is at around 625°C. UV-Visible spectra shows a broad band at around 305nm which indicates Ce3+ in base glass whereas in case of UV-exposed sample the reduced peak intensity indicates conversion of Ce3+ to Ce4+ ions, which also confirm formation of Ago in glass samples. Ag agglomeration was also confirmed from the band position at 430nm in heat treated sample, found responsible for early growth of meta-silicate phase in exposed sample. The meta-silicate phase was selectively etched for fabrication of micro-devices.

Synthesis of highly efficient antibacterial agent Ag doped ZnO nanorods: Structural, Raman and optical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jan, Tariq; Iqbal, Javed, E-mail: javed.saggu@iiu.edu.pk; Ismail, Muhammad

Here, synthesis, structural, morphological, Raman, optical properties and antibacterial activity of undoped and Ag doped ZnO nanorods by chemical co-precipitation technique have been reported. Structural analysis has revealed that Ag doping cannot deteriorate the structure of ZnO and wurtzite phase is maintained. Lattice constants are found to be decreased with the Ag doping. Fourier transform infrared and Raman spectroscopy also confirm the X-ray diffraction results. Scanning electron microscopy results have demonstrated the formation of ZnO nanorods with average diameter and length of 96 nm and 700 nm, respectively. Raman spectroscopy results suggest that the Ag doping enhances the number of defects inmore » ZnO crystal. It has been found from optical study that Ag doping results in positional shift of band edge absorption peak. This is attributed to the successful incorporation of Ag dopant into ZnO host matrix. The antibacterial activity of prepared nanorods has been determined by two different methods and compared to that of undoped ZnO nanorods. Ag doped ZnO nanorods exhibit excellent antibacterial activity as compared to that of undoped ZnO nanorods. This excellent antibacterial activity may be attributed to the presence of oxygen vacancies and Zn{sup 2+} interstitial defects. Our preliminary findings suggest that Ag doped ZnO nanorods can be used externally to control the spreading of infections related with tested bacterial strains.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tarantini, C.; Sung, Z. -H.; Lee, P. J.

Nb 3Sn wires are now very close to their final optimization but despite its classical nature, detailed understanding of the role of Ta and Ti doping in the A15 is not fully understood. Long thought to be essentially equivalent in their influence on H c2, they were interchangeably applied. Here we show that Ti produces significantly more homogeneous chemical and superconducting properties. Despite Ta-doped samples having a slightly higher T c onset in zero-field, they always have a wider Tc-distribution. In particular, whereas the Ta-doped A15 has a T c-distribution extending from 18 down to 5-6 K (the lowest expectedmore » Tc for the binary A15 phase), the Ti-doped samples have no A15 phase with T c below ~12 K. The much narrower T c distribution in the Ti-doped samples has a positive effect on their in-field T c-distribution too, leading to an extrapolated μ0H c2(0) 2 Tesla larger than the Ta-doped one. Ti-doping also appears to be very homogeneous even when the Sn content is reduced in order to inhibit breakdown of the diffusion barriers in very high Jc conductors. As a result, the enhanced homogeneity of the Ti-doped samples appears to result from its assistance of rapid diffusion of Sn into the filaments and by its incorporation into the A15 phase interchangeably with Sn on the Sn sites of the A15 phase.« less

Gene doping in sports.

PubMed

Unal, Mehmet; Ozer Unal, Durisehvar

2004-01-01

Gene or cell doping is defined by the World Anti-Doping Agency (WADA) as "the non-therapeutic use of genes, genetic elements and/or cells that have the capacity to enhance athletic performance". New research in genetics and genomics will be used not only to diagnose and treat disease, but also to attempt to enhance human performance. In recent years, gene therapy has shown progress and positive results that have highlighted the potential misuse of this technology and the debate of 'gene doping'. Gene therapies developed for the treatment of diseases such as anaemia (the gene for erythropoietin), muscular dystrophy (the gene for insulin-like growth factor-1) and peripheral vascular diseases (the gene for vascular endothelial growth factor) are potential doping methods. With progress in gene technology, many other genes with this potential will be discovered. For this reason, it is important to develop timely legal regulations and to research the field of gene doping in order to develop methods of detection. To protect the health of athletes and to ensure equal competitive conditions, the International Olympic Committee, WADA and International Sports Federations have accepted performance-enhancing substances and methods as being doping, and have forbidden them. Nevertheless, the desire to win causes athletes to misuse these drugs and methods. This paper reviews the current status of gene doping and candidate performance enhancement genes, and also the use of gene therapy in sports medicine and ethics of genetic enhancement. Copyright 2004 Adis Data Information BV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kung, Y. F.; Bazin, C.; Wohlfeld, K.

Using determinant quantum Monte Carlo (DQMC) simulations, we systematically study the doping dependence of the crossover from one to two dimensions and its impact on the magnetic properties of the Hubbard model. A square lattice of chains is used, in which the dimensionality can be tuned by varying the interchain coupling t ⊥. The dynamical spin structure factor and static quantities, such as the static spin susceptibility and nearest-neighbor spin correlation function, are characterized in the one- and two-dimensional limits as a benchmark. When the dimensionality is tuned between these limits, the magnetic properties, while evolving smoothly from one tomore » two dimensions, drastically change regardless of the doping level. This suggests that the spin excitations in the two-dimensional Hubbard model, even in the heavily doped case, cannot be explained using the spinon picture known from one dimension. In conclusion, the DQMC calculations are complemented by cluster perturbation theory studies to form a more complete picture of how the crossover occurs as a function of doping and how doped holes impact magnetic order.« less

Extrinsic doping of the half-Heusler compounds

NASA Astrophysics Data System (ADS)

Stern, Robin; Dongre, Bonny; Madsen, Georg K. H.

2016-08-01

Controlling the p- and n-type doping is a key tool to improve the power-factor of thermoelectric materials. In the present work we provide a detailed understanding of the defect thermochemistry in half-Heusler compounds. We calculate the formation energies of intrinsic and extrinsic defects in state of the art n-type TiNiSn and p-type TiCoSb thermoelectric materials. It is shown how the incorporation of online repositories can reduce the workload in these calculations. In TiNiSn we find that Ni- and Ti-interstitial defects play a crucial role in the carrier concentration of TiNiSn. Furthermore, we find that extrinsic doping with Sb can substantially enhance the carrier concentration, in agreement with experiment. In case of TiCoSb, we find ScTi, FeCo and SnSb being possible p-type dopants. While experimental work has mainly focussed on Sn-doping of the Sb site, the present result underlines the possibility to p-dope TiCoSb on all lattice sites.

Synthesis and impurity doping of GaN powders by the two-stage vapor-phase method for phosphor applications

NASA Astrophysics Data System (ADS)

Hara, K.; Okuyama, E.; Yonemura, A.; Uchida, T.; Okamoto, N.

2006-09-01

The analysis of particle formation and the doping of luminescent impurities during the two-stage vapor-phase synthesis of GaN powder were carried. GaN particles were grown very fast during the second stage of this method, and the increment in particle size was larger for higher reaction temperature in the region between 800 and 1000 °C. The analysis on the behaviour of particle growth based on the reaction kinetics suggested that the growth almost finishes in a few seconds with an extremely high rate at the early stage at 1000 °C, whereas the growth lasts with relatively low rates for a time longer than the actual growth duration for the case of lower temperature synthesis. GaN powders doped with various impurity atoms were synthesized by supplying impurity sources with GaCl during the second stage. The samples doped with Zn, Mg and Tb showed emissions characteristic for each doped impurity.

Deposition of undoped and Al doped ZnO thin films using RF magnetron sputtering and study of their structural, optical and electrical properties

NASA Astrophysics Data System (ADS)

Parvathy Venu, M.; Shrisha B., V.; Balakrishna, K. M.; Naik, K. Gopalakrishna

2017-05-01

Undoped ZnO and Al doped ZnO thin films were deposited on glass and p-Si(100) substrates by RF magnetron sputtering technique at room temperature using homemade targets. ZnO target containing 5 at% of Al2O3 as doping source was used for the growth of Al doped ZnO thin films. XRD revealed that the films have hexagonal wurtzite structure with high crystallinity. Morphology and chemical composition of the films have been indicated by FESEM and EDAX studies. A blue shift of the band gap energy and higher optical transmittance has been observed in the case of Al doped ZnO (ZnO:Al) thin films with respect to the ZnO thin films. The as deposited films on p-Si were used to fabricate n-ZnO/p-Si(100) and n-ZnO:Al/p-Si(100) heterojunction diodes and their room temperature current-voltage characteristics were studied.

Preparation and accreditation of anti-doping laboratories for the Olympic Games.

PubMed

Botrè, Francesco; Wu, Moutian; Boghosian, Thierry

2012-07-01

This article outlines the process of preparation of an anti-doping laboratory in view of the activities to be performed on the occasion of the Olympic Games, focusing in particular on the accreditation requirements of the World Anti-Doping Agency (WADA) and ISO/IEC 17025, as well as on the additional obligations required by the International Olympic Committee, which is the testing authority responsible for the anti-doping activities at the Olympics. Due to the elevated workload expected on the occasion of the Olympic Games, the designated anti-doping laboratory needs to increase its analytical capacity (samples processed/time) and capability by increasing the laboratory's resources in terms of space, instrumentation and personnel. Two representative cases, one related to the Winter Olympic Games (Torino 2006) and one related to the Summer Olympic Games (Beijing 2008), are presented in detail, in order to discuss the main aspects of compliance with both the WADA and ISO/IEC 17025 accreditation requirements.

Effect of severe plastic deformation on the structure and crystal-lattice distortions in the Ni3(Al, X) ( X = Ti, Nb) intermetallic compound

NASA Astrophysics Data System (ADS)

Kazantseva, N. V.; Pilyugin, V. P.; Danilov, S. E.; Kolosov, V. Yu.

2015-05-01

A systematic combined study of crystal lattice distortions caused by doping and by severe plastic deformation (SPD) of Ti- and Nb-doped Ni3Al intermetallic compound has been carried out using methods of X-ray diffraction, electron microscopy, and electrical-resistance measurements. The degree of imperfection of the alloys has been estimated based on the results obtained by all three methods. The degree of structural perfection of niobium-doped crystals was found to be higher than in the case of Ti doping. The character of stresses (tensile stresses after doping; and compressive stresses after SPD) in the crystal lattice has been established and their values have been calculated. A significant increase in the density of dislocations, point defects, and lattice curvature has been found after SPD. A nanocrystalline structure is formed in these alloys, but no complete disordering of the intermetallic phase is observed.

Effect of Mo and Ti doping concentration on the structural and optical properties of ZnS nanoparticles

NASA Astrophysics Data System (ADS)

Naz, Hina; Ali, Rai Nauman; Zhu, Xingqun; Xiang, Bin

2018-06-01

In this paper, we report the effect of single phase Mo and Ti doping concentration on the structural and optical properties of the ZnS nanoparticles. The structural and optical properties of the as-synthesized samples have been examined by x-ray diffraction, transmission electron microscopy (TEM), UV-visible near infrared absorption spectroscopy and x-ray photoelectron spectroscopy. TEM characterizations reveal a variation in the doped ZnS nanoparticle size distribution by utilizing different dopants of Mo and Ti. In absorption spectra, a clear red shift of 14 nm is observed with increasing Mo concentration as compared to pure ZnS nanoparticles, while by increasing Ti doping concentration, blue shift of 14 nm is obtained. Moreover, it demonstrates that the value of energy band gap decreases from 4.03 eV to 3.89 eV in case of Mo doping. However, the value of energy band gap have shown a remarkable increase from 4.11 eV to 4.27 eV with increasing Ti doping concentration. Our results provide a new pathway to understand the effect of Mo and Ti doping concentrations on the structural and optical properties of ZnS nanoparticles as it could be the key to tune the properties for future optoelectronic devices.

Physicochemical Properties and Cellular Responses of Strontium-Doped Gypsum Biomaterials

PubMed Central

Pouria, Amir; Bandegani, Hadis; Pourbaghi-Masouleh, Milad; Hesaraki, Saeed; Alizadeh, Masoud

2012-01-01

This paper describes some physical, structural, and biological properties of gypsum bioceramics doped with various amounts of strontium ions (0.19–2.23 wt%) and compares these properties with those of a pure gypsum as control. Strontium-doped gypsum (gypsum:Sr) was obtained by mixing calcium sulfate hemihydrate powder and solutions of strontium nitrate followed by washing the specimens with distilled water to remove residual salts. Gypsum was the only phase found in the composition of both pure and gypsum:Sr, meanwhile a shift into lower diffraction angles was observed in the X-ray diffraction patterns of doped specimens. Microstructure of all gypsum specimens consisted of many rod-like small crystals entangled to each other with more elongation and higher thickness in the case of gypsum:Sr. The Sr-doped sample exhibited higher compressive strength and lower solubility than pure gypsum. A continuous release of strontium ions was observed from the gypsum:Sr during soaking it in simulated body fluid for 14 days. Compared to pure gypsum, the osteoblasts cultured on strontium-doped samples showed better proliferation rate and higher alkaline phosphatase activity, depending on Sr concentration. These observations can predict better in vivo behavior of strontium-doped gypsum compared to pure one. PMID:22719270

Doping dependence of charge order in electron-doped cuprate superconductors

NASA Astrophysics Data System (ADS)

Mou, Yingping; Feng, Shiping

2017-12-01

In the recent studies of the unconventional physics in cuprate superconductors, one of the central issues is the interplay between charge order and superconductivity. Here the mechanism of the charge-order formation in the electron-doped cuprate superconductors is investigated based on the t-J model. The experimentally observed momentum dependence of the electron quasiparticle scattering rate is qualitatively reproduced, where the scattering rate is highly anisotropic in momentum space, and is intriguingly related to the charge-order gap. Although the scattering strength appears to be weakest at the hot spots, the scattering in the antinodal region is stronger than that in the nodal region, which leads to the original electron Fermi surface is broken up into the Fermi pockets and their coexistence with the Fermi arcs located around the nodal region. In particular, this electron Fermi surface instability drives the charge-order correlation, with the charge-order wave vector that matches well with the wave vector connecting the hot spots, as the charge-order correlation in the hole-doped counterparts. However, in a striking contrast to the hole-doped case, the charge-order wave vector in the electron-doped side increases in magnitude with the electron doping. The theory also shows the existence of a quantitative link between the single-electron fermiology and the collective response of the electron density.

Li-adsorption on doped Mo2C monolayer: A novel electrode material for Li-ion batteries

NASA Astrophysics Data System (ADS)

Mehta, Veenu; Tankeshwar, K.; Saini, Hardev S.

2018-04-01

A first principle calculation has been used to study the electronic and magnetic properties of pristine and N/Mn-doped Mo2C with and without Li-adsorption. The pseudopotential method implemented in SIESTA code based on density functional theory with generalized gradient approximation (GGA) as exchange-correlation (XC) potential has been employed. Our calculated results revealed that the Li gets favorably adsorbed on the hexagonal centre in pristine Mo2C and at the top of C-atom in case of N/Mn-doped Mo2C. The doping of Mn and N atom increases the adsorption of Li in Mo2C monolayer which may results in enhancement of storage capacity in Li-ion batteries. The metallic nature of Li-adsorbed pristine and N/Mn-doped Mo2C monolayer implies a good electronic conduction which is crucial for anode materials for its applications in rechargeable batteries. Also, the open circuit voltage for single Li-adsorption in doped Mo2C monolayer comes in the range of 0.4-1.0 eV which is the optimal range for any material to be used as an anode material. Our result emphasized the enhanced performance of doped Mo2C as an anode material in Li-ion batteries.

Functionalised hexagonal-domain graphene for position-sensitive photodetectors

NASA Astrophysics Data System (ADS)

De Sanctis, Adolfo; Barnes, Matthew D.; Amit, Iddo; Craciun, Monica F.; Russo, Saverio

2017-03-01

Graphene’s unique photoresponse has been largely used in a multitude of optoelectronics applications ranging from broadband photodetectors to wave-guide modulators. In this work we extend the range of applications to position-sensitive photodetectors (PSDs) using FeCl3-intercalated hexagonal domains of graphene grown by atmospheric pressure chemical vapour deposition (APCVD). The FeCl3-based chemical functionalisation of APCVD graphene crystals is affected by the presence of wrinkles and results in a non-uniform doping of the graphene layers. This doping profile creates multiple p-p+ photoactive junctions which show a linear and bipolar photoresponse with respect to the position of a focused light spot, which is ideal for the realization of a PSD. Our study paves the way towards the fabrication of flexible and transparent PSDs that could be embedded in smart textile and wearable electronics.

Synthesis and Antimicrobial Activity of Silver-Doped Hydroxyapatite Nanoparticles

PubMed Central

Ciobanu, Carmen Steluta; Iconaru, Simona Liliana; Chifiriuc, Mariana Carmen; Costescu, Adrian; Le Coustumer, Philippe; Predoi, Daniela

2013-01-01

The synthesis of nanosized particles of Ag-doped hydroxyapatite with antibacterial properties is of great interest for the development of new biomedical applications. The aim of this study was the evaluation of Ca10−xAgx(PO4)6(OH)2 nanoparticles (Ag:HAp-NPs) for their antibacterial and antifungal activity. Resistance to antimicrobial agents by pathogenic bacteria has emerged in the recent years and became a major health problem. Here, we report a method for synthesizing Ag doped nanocrystalline hydroxyapatite. A silver-doped nanocrystalline hydroxyapatite was synthesized at 100°C in deionised water. Also, in this paper Ag:HAp-NPs are evaluated for their antimicrobial activity against Gram-positive and Gram-negative bacteria and fungal strains. The specific antimicrobial activity revealed by the qualitative assay is demonstrating that our compounds are interacting differently with the microbial targets, probably due to the differences in the microbial wall structures. PMID:23509801

Synthesis and antimicrobial activity of silver-doped hydroxyapatite nanoparticles.

PubMed

Ciobanu, Carmen Steluta; Iconaru, Simona Liliana; Chifiriuc, Mariana Carmen; Costescu, Adrian; Le Coustumer, Philippe; Predoi, Daniela

2013-01-01

The synthesis of nanosized particles of Ag-doped hydroxyapatite with antibacterial properties is of great interest for the development of new biomedical applications. The aim of this study was the evaluation of Ca(10-x)Ag(x)(PO4)6(OH)2 nanoparticles (Ag:HAp-NPs) for their antibacterial and antifungal activity. Resistance to antimicrobial agents by pathogenic bacteria has emerged in the recent years and became a major health problem. Here, we report a method for synthesizing Ag doped nanocrystalline hydroxyapatite. A silver-doped nanocrystalline hydroxyapatite was synthesized at 100°C in deionised water. Also, in this paper Ag:HAp-NPs are evaluated for their antimicrobial activity against gram-positive and gram-negative bacteria and fungal strains. The specific antimicrobial activity revealed by the qualitative assay is demonstrating that our compounds are interacting differently with the microbial targets, probably due to the differences in the microbial wall structures.

Optical and electrical properties of copper-incorporated ZnS films applicable as solar cell absorbers

NASA Astrophysics Data System (ADS)

Mehrabian, M.; Esteki, Z.; Shokrvash, H.; Kavei, G.

2016-10-01

Un-doped and Cu-doped ZnS (ZnS:Cu) thin films were synthesized by Successive Ion Layer Absorption and Reaction (SILAR) method. The UV-visible absorption studies have been used to calculate the band gap values of the fabricated ZnS:Cu thin films. It was observed that by increasing the concentration of Cu2+ ions, the Fermi level moves toward the edge of the valence band of ZnS. Photoluminescence spectra of un-doped and Cu-doped ZnS thin films was recorded under 355 nm. The emission spectrum of samples has a blue emission band at 436 nm. The peak positions of the luminescence showed a red shift as the Cu2+ ion concentration was increased, which indicates that the acceptor level (of Cu2+) is getting close to the valence band of ZnS.

Photocatalytic Antibacterial Performance of Glass Fibers Thin Film Coated with N-Doped SnO 2 /TiO 2

PubMed Central

Sikong, Lek; Niyomwas, Sutham; Rachpech, Vishnu

2014-01-01

Both N-doped and undoped thin films of 3SnO2/TiO2 composite were prepared, by sol-gel and dip-coating methods, and then calcined at 600°C for 2 hours. The films were characterized by FTIR, XRD, UV-Vis, SEM, and XPS, and their photocatalytic activities to degrade methylene blue in solution were determined, expecting these activities to correlate with the inactivation of bacteria, which was confirmed. The doped and undoped films were tested for activities against Gram-negative Escherichia coli (E. coli) and Salmonella typhi (S. typhi), and Gram-positive Staphylococcus aureus (S. aureus). The effects of doping on these composite films included reduced energy band gap, high crystallinity of anatase phase, and small crystallite size as well as increased photocatalytic activity and water disinfection efficiency. PMID:24693250

Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

PubMed Central

Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

2016-01-01

A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm−3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab. PMID:27550805

Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides.

PubMed

Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

2016-08-23

A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 10(18) cm(-3) was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.

Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

NASA Astrophysics Data System (ADS)

Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

2016-08-01

A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm-3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.

Sulfur doped reduced graphene oxides with enhanced catalytic activity for oxygen reduction via molten salt redox-sulfidation.

PubMed

Gu, Yuxing; Chen, Zhigang; Tang, Juanjuan; Xiao, Wei; Mao, Xuhui; Zhu, Hua; Wang, Dihua

2016-12-07

A spontaneous redox reaction of reduced graphene oxide (rGO) in molten Li 2 CO 3 -Na 2 CO 3 -K 2 CO 3 with a small amount of Li 2 SO 4 at 550 °C was applied to synthesize sulfur and sulfur-cobalt doped rGOs (S-rGO/S-Co-rGO). The obtained S-rGOs and S-Co-rGOs show enhanced catalytic activity for the oxygen reduction reaction (ORR) in alkaline aqueous solutions. The onset reduction potential and the half-wave potential of S-Co-rGO are 60 and 40 mV more positive than those of the original rGO, respectively. The reduction current density of S-Co-rGO increases by nearly five times. This study provides a green and continuous molten salt doping approach for the fabrication of heteroatom-doped graphene with excellent catalytic activity for the ORR.

Reversal of spontaneous magnetization and spontaneous exchange bias for Sm1-xYxCrO3: The effect of Y doping

NASA Astrophysics Data System (ADS)

Zhang, Hongguang; Wang, Jianhua; Xie, Liang; Fu, Dexiang; Guo, Yanyan; Li, Yongtao

2017-11-01

We report the crystal and electronic structures and magnetic properties of non-magnetic Y3+ ion doped SmCrO3 crystals. Structural distortion and electronic structure variation are caused by cation disorder due to Y doping. Although the spin moment of Sm3+ is diluted by nonmagnetic Y ions, spin reorientation continues to exist, and the temperature-dependent magnetization reversal effect and the spontaneous exchange bias effect under zero field cooling are simultaneously induced below Neel temperature. Significantly, the method of doping promotes the achievement of temperature dependent tunable switching of magnetization and sign of a spontaneous exchange bias from positive to negative. Our work provides more tunable ways to the sign reversal of magnetization and exchange bias, which have potential application in designing magnetic random access memory devices, thermomagnetic switches and spin-valve devices.

From melamine sponge towards 3D sulfur-doping carbon nitride as metal-free electrocatalysts for oxygen reduction reaction

NASA Astrophysics Data System (ADS)

Xu, Jingjing; Li, Bin; Li, Songmei; Liu, Jianhua

2017-07-01

Development of new and efficient metal-free electrocatalysts for replacing Pt to improve the sluggish kinetics of oxygen reduction reaction (ORR) is of great importance to emerging renewable energy technologies such as metal-air batteries and polymer electrolyte fuel cells. Herein, 3D sulfur-doping carbon nitride (S-CN) as a novel metal-free ORR electrocatalyst was synthesized by exploiting commercial melamine sponge as raw material. The sulfur atoms were doping on CN networks uniformly through numerous S-C bonds which can provide additional active sites. And it was found that the S-CN exhibited high catalytic activity for ORR in term of more positive onset potential, higher electron transfer number and higher cathodic density. This work provides a novel choice of metal-free ORR electrocatalysts and highlights the importance of sulfur-doping CN in metal-free ORR electrocatalysts.

Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe) 5(Bi 2Se 3) 3

DOE PAGES

Ren, Xiaochen; Singh, Arunima K.; Fang, Lei; ...

2016-09-07

Impurity doping in two-dimensional (2D) materials can provide a route to tuning electronic properties, so it is important to be able to determine the distribution of dopant atoms within and between layers. Here we report the totnographic mapping of dopants in layered 2D materials with atomic sensitivity and subnanometer spatial resolution using atom, probe tomography (APT). Also, APT analysis shows that Ag dopes both Bi 2Se 3 and PbSe layers in (PbSe) 5(Bi 2Se 3) 3, and correlations :in the position of Ag atoms suggest a pairing across neighboring Bi 2Se 3 and PbSe layers. Finally, density functional theory (DFT)more » calculations confirm the favorability of substitutional-doping for both Pb and Bi and provide insights into the,observed spatial correlations in dopant locations.« less

The t J model for the oxide high-Tc superconductors

NASA Astrophysics Data System (ADS)

Ogata, Masao; Fukuyama, Hidetoshi

2008-03-01

A theoretical review is given on high temperature superconductivity in copper oxides (cuprates) by focusing on the hole doping cases based on the view that it is realized in carrier doped Mott insulators, as noted by Anderson in the initial stage. From the detailed knowledge of electronic states deduced from experiments that showed the undoped parent case is Mott insulators (charge transfer type insulators, to be precise) and that the hole doping is mainly on oxygen sites, the t-J model, as derived by Zhang and Rice, is shown to be a canonical model for hole doped cuprates and values of various parameters of the model have been assessed. Results of many different numerical methods so far obtained for this t-J model, especially the variational Monte Carlo method, have clearly indicated the stability of the \\rmd_{x^2-y^2} -wave superconductivity at absolute zero for the parameter region of actual experimental interest and the particular doping dependences of the condensation energy of superconductivity reflecting particular features of doped Mott insulators. For finite temperatures, on the other hand, the field theoretical slave-boson approximation based on the spin (spinons) and charge (holons) separations and the gauge fields as a glue combining them predicts qualitatively particular features of the existence of characteristic crossover temperatures of the spin singlet of the resonating valence bond (RVB) state, TRVB and the onset of Bose condensation of holons, TB, triggering coherent motion of electrons as convoluted particles of spinons and holons. The considerations based on the gauge field indicate that the onset temperature of superconductivity, Tc, is the lower one of these two, i.e. either TB (overdoped cases) or TRVB (underdoped cases), respectively. These characteristic features of the 'phase diagram' at finite temperatures are in overall agreement with various experimental observations, especially with the existence of spin-gap or pseudo-gap phases. In more detailed examinations of the underdoped region, the antiferromagnetic long-range order and superconductivity show a very intricate relationship at low temperatures depending on the system; they coexist as clarified in the inner layer of Hg-1245 but spin glass states intervene between them in La2-xSrxCuO4 (LSCO). It is argued that these differences can be attributed to the different degrees of disorder. Actually, theories based on the t-J model have also predicted the coexistence of antiferromagnetism and superconductivity in the ground state of clean systems. On the other hand, interesting experimental findings of large Nernst effect and 'Fermi arc' in LSCO and impurity effects in YBCO have prompted the necessity of theoretical investigations of electronic states of lightly doped Mott insulators in the presence of strong disorder.

Epidemiological investigation of the UGT2B17 polymorphism in doping control urine samples and its correlation to T/E ratios.

PubMed

Anielski, Patricia; Simmchen, Juliane; Wassill, Lars; Ganghofner, Dirk; Thieme, Detlef

2011-10-01

The deletion polymorphism of the enzyme UGT2B17 is known to correlate with the level of the testosterone to epitestosterone (T/E) ratio in urine specimen. Due to the importance of the T/E ratio to detect testosterone abuse in doping analysis, a PCR-ELISA system (Genotype® UGT test, AmplexDiagnostics) was established to identify the UGT2B17 phenotype in urine samples. Epidemiological investigations in a set of 674 routine doping controls (in- and out-of-competition) resulted in 22.8% homozygote gene-deleted and 74.5% UGT2B17-positive athletes. The validated test system has shown to be robust and sensitive: in only 18 cases (2.7%) isolation of cell material from urine failed. Following hydrolysis of glucuronidated conjugates, steroids were analyzed as bis-TMS derivatives by gas chromatography-mass spectrometry (GC-MS), for example, testosterone (T) and epitestosterone (E). Additionally, isotope ration mass spectrometry (IRMS) analysis and luteinizing hormone (LH) measurement were applied. Mean T/E ratios significantly correlated with the UGT2B17 phenotype (del: T/E 0.9; pos: 1.7), however the values did not differ as distinctive as reported in previous studies. Additionally, the T/E ratios in the gene-deleted group did not show a normal curve of distribution (median of T/E 0.5). Obviously, beside the UGT2B17 deletion further influences have to be taken into account, for example, polymorphisms or induction of other metabolizing enzymes. Our results indicate that the UGT2B17 polymorphism might be insufficient when utilized solely as a crucial parameter for individual interpretation of T/E in urine. Nevertheless, the detection of the UGT2B17-gene deletion in urine samples would provide additional information important for gathering evidence in analysis of steroids in doping control. Copyright © 2011 John Wiley & Sons, Ltd.

Abnormal temperature dependence of conductance of single Cd-doped ZnO nanowires

NASA Astrophysics Data System (ADS)

Li, Q. H.; Wan, Q.; Wang, Y. G.; Wang, T. H.

2005-06-01

Positive temperature coefficient of resistance is observed on single Cd-doped ZnO nanowires. The current along the nanowire increases linearly with the bias and saturates at large biases. The conductance is greatly enhanced either by ultraviolet illumination or infrared illumination. However, the conductance decreases with increasing temperature, in contrast to the reported temperature behavior either for ZnO nanostructures or for CdO nanoneedles. The increase of the conductance under illumination is related to surface effect and the decrease with increasing temperature to bulk effect. These results show that Cd doping does not change surface effect but affects bulk effect. Such a bulk effect could be used to realize on-chip temperature-independent varistors.

Spin properties of charged Mn-doped quantum dota)

NASA Astrophysics Data System (ADS)

Besombes, L.; Léger, Y.; Maingault, L.; Mariette, H.

2007-04-01

The optical properties of individual quantum dots doped with a single Mn atom and charged with a single carrier are analyzed. The emission of the neutral, negatively and positively charged excitons coupled with a single magnetic atom (Mn) are observed in the same individual quantum dot. The spectrum of the charged excitons in interaction with the Mn atom shows a rich pattern attributed to a strong anisotropy of the hole-Mn exchange interaction slightly perturbed by a small valence-band mixing. The anisotropy in the exchange interaction between a single magnetic atom and a single hole is revealed by comparing the emission of a charged Mn-doped quantum dot in longitudinal and transverse magnetic field.

Magnetic and resonance properties of ferrihydrite nanoparticles doped with cobalt

NASA Astrophysics Data System (ADS)

Stolyar, S. V.; Yaroslavtsev, R. N.; Iskhakov, R. S.; Bayukov, O. A.; Balaev, D. A.; Dubrovskii, A. A.; Krasikov, A. A.; Ladygina, V. P.; Vorotynov, A. M.; Volochaev, M. N.

2017-03-01

Powders of undoped ferrihydrite nanoparticles and ferrihydrite nanoparticles doped with cobalt in the ratio of 5: 1 have been prepared by hydrolysis of 3 d-metal salts. It has been shown using Mössbauer spectroscopy that cobalt is uniformly distributed over characteristic crystal-chemical positions of iron ions. The blocking temperatures of ferrihydrite nanoparticles have been determined. The nanoparticle sizes, magnetizations, surface anisotropy constants, and bulk anisotropy constants have been estimated. The doping of ferrihydrite nanoparticles with cobalt leads to a significant increase in the anisotropy constant of a nanoparticle and to the formation of surface rotational anisotropy with the surface anisotropy constant K u = 1.6 × 10-3 erg/cm2.

Photoinduced charge-carrier modulation of inkjet-printed carbon nanotubes via poly(vinyl acetate) doping and dedoping for thermoelectric generators

NASA Astrophysics Data System (ADS)

Horike, Shohei; Fukushima, Tatsuya; Saito, Takeshi; Koshiba, Yasuko; Ishida, Kenji

2018-01-01

Here, we studied the charge-carrier modulation of single-walled carbon nanotubes (SWCNTs) via poly(vinyl acetate) (PVAc) doping and dedoping under ultraviolet (UV) light irradiation with the aim of pairing several p- and n-type SWCNTs as thermoelectric (TE) elements. The Seebeck coefficient of the SWCNTs was first made negative by doping with PVAc and then made positive again through UV-induced PVAc dedoping. A possible TE module configuration and the process for its fabrication are proposed, wherein prints and photopatterns can be obtained without the use of additional electrodes. Our findings enable the fabrication of fine TE modules using simple materials and techniques.

Structural, optical and morphological studies of Cd2+ doping in CH3NH3PbI3 perovskite semiconductor at Pb2+ site for photovoltaic applications

NASA Astrophysics Data System (ADS)

Parrey, Khursheed; Warish, Mohd.; Devi, Nisha; Niazi, A.; Aziz, A.; Ansari, S. G.

2018-05-01

Doping of semiconductors in a controlled mannner have paramount technological importance as far as the optical and electronic properties of the devices are concerned. Hybrid organic-inorganic perovskites (HOPs) as intrinsic semiconductors have sensational properties required for both the solar photovoltaics and perovskite light emitting diodes. However, undoped and complexity in the dpoing process of HOPs have limited their exploitation in the field of elcronics. In this papper we present the synthesis of HOP semiconductor (CH3NH3PbI3) doped in Pb2+ position by Cd2+. We studied the effect of the incorporation of Cd2+ into the crystalline structure and analysed the changes in the properties like crystal structure, optical absorption and the surface morphology. The structure of HOPs confirmed by X-ray diffraction analysis is tetragonal perovskite type. It can be found that the crystallinity of the samples was enhanced with the doping concentration as the intensity of diffraction peaks were observed to increase with doping. The absorption spectra as obtained from UV-Visible spectrophotometry and Tauc plot analysis indicated that the band gap observed (1.73 eV) is direct type and gets reduced to 1.67 eV with the doping concentration. The red shift may be due to the increase in the size of nanocrystalline material with doping.

Suppression of the Hall number due to charge density wave order in high-Tc cuprates

NASA Astrophysics Data System (ADS)

Sharma, Girish; Nandy, S.; Taraphder, A.; Tewari, Sumanta

2018-05-01

Understanding the pseudogap phase in hole-doped high-temperature cuprate superconductors remains a central challenge in condensed-matter physics. From a host of recent experiments there is now compelling evidence of translational-symmetry-breaking charge density wave (CDW) order in a wide range of doping inside this phase. Two distinct types of incommensurate charge order, bidirectional at zero or low magnetic fields and unidirectional at high magnetic fields close to the upper critical field Hc 2, have been reported so far in approximately the same doping range between p ≃0.08 and p ≃0.16 . In concurrent developments, recent high-field Hall experiments have also revealed two indirect but striking signatures of Fermi surface reconstruction in the pseudogap phase, namely, a sign change of the Hall coefficient to negative values at low temperatures in the intermediate range of hole doping and a rapid suppression of the positive Hall number without a change in sign near optimal doping p ˜0.19 . We show that the assumption of a unidirectional incommensurate CDW (with or without a coexisting weak bidirectional order) at high magnetic fields near optimal doping and the coexistence of both types of orders of approximately equal magnitude at high magnetic fields in the intermediate range of doping may help explain the striking behavior of the low-temperature Hall effect in the entire pseudogap phase.

Structural and optical properties of Mg doped ZnS quantum dots and biological applications

NASA Astrophysics Data System (ADS)

Ashokkumar, M.; Boopathyraja, A.

2018-01-01

Zn1-xMgxS (x = 0, 0.2 and 0.4) quantum dots (QDs) were prepared by co-precipitation method. The Mg dopant did not modify the cubic blende structure of ZnS QDs. The Mg related secondary phase was not detected even for 40% of Mg doping. The size mismatch between host Zn ion and dopant Mg ion created distortion around the dopant. The creation of distortion centres produced small changes in the lattice parameters and diffraction peak position. All the QDs showed small sulfur deficiency and the deficiency level were increased by Mg doping. Band gap of the QD was decreased due to the dominated quantum confinement effect over compositional effect at initial doping of Mg. But at higher doping the band gap was increased due to compositional effect, since there was no change in average crystallite size. The prepared QDs had three emission bands in the UV and Visible regions corresponding to near band edge emission and defect related emissions. The electron transport reaction chain which forms free radicals was broken by sulfur vacancy trap sites. Therefore, the ZnS QDs had better antioxidant activity and the antioxidant behaviour was enhanced by Mg doping. The enhanced UV absorption and emission of 20% of Mg doped ZnS QDs let to maximize the zone of inhibition against E. Coli bacterial strain.

N-doping effectively enhances the adsorption capacity of biochar for heavy metal ions from aqueous solution.

PubMed

Yu, Wenchao; Lian, Fei; Cui, Guannan; Liu, Zhongqi

2018-02-01

N-doping was successfully employed to improve the adsorption capacity of biochar (BC) for Cu 2+ and Cd 2+ by direct annealing of crop straws in NH 3 . The surface N content of BC increased more than 20 times by N-doping; meanwhile the content of oxidized-N was gradually diminished but graphitic-N was formed and increased with increasing annealing temperature and duration time. After N-doping, a high graphitic-N percentage (46.4%) and S BET (418.7 m 2 /g) can be achieved for BC. As a result, the N-doped BC exhibited an excellent adsorption capacity for Cu 2+ (1.63 mmol g -1 ) and Cd 2+ (1.76 mmol g -1 ), which was up to 4.0 times higher than that of the original BC. Furthermore, the adsorption performance of the N-doped BC remained stable even at acidic conditions. A positive correlation can be found between adsorption capacity with the graphitic N content on BC surface. The surface chemistry of N-doped BC before and after the heavy metal ions adsorption was carefully examined by XPS and FTIR techniques, which indicated that the adsorption mechanisms mainly included cation-π bonding and complexation with graphitic-N and hydroxyl groups of carbon surfaces. Copyright © 2017 Elsevier Ltd. All rights reserved.

Acoustic Behavior of Hollow Blocks and Bricks Made of Concrete Doped with Waste-Tire Rubber.

PubMed

Fraile-Garcia, Esteban; Ferreiro-Cabello, Javier; Defez, Beatriz; Peris-Fajanes, Guillermo

2016-11-26

In this paper, we investigate the acoustic behaviour of building elements made of concrete doped with waste-tire rubber. Three different mixtures were created, with 0%, 10%, and 20% rubber in their composition. Bricks, lattice joists, and hollow blocks were manufactured with each mixture, and three different cells were built and tested against aerial and impact noise. The values of the global acoustic isolation and the reduction of the sound pressure level of impacts were measured. Results proved that highly doped elements are an excellent option to isolate low frequency sounds, whereas intermediate and standard elements constitute a most interesting option to block middle and high frequency sounds. In both cases, the considerable amount of waste-tire rubber recycled could justify the employment of the doped materials for the sake of the environment.

The dependence of graphene Raman D-band on carrier density.

PubMed

Liu, Junku; Li, Qunqing; Zou, Yuan; Qian, Qingkai; Jin, Yuanhao; Li, Guanhong; Jiang, Kaili; Fan, Shoushan

2013-01-01

Raman spectroscopy has been an integral part of graphene research and can provide information about graphene structure, electronic characteristics, and electron-phonon interactions. In this study, the characteristics of the graphene Raman D-band, which vary with carrier density, are studied in detail, including the frequency, full width half-maximum, and intensity. We find the Raman D-band frequency increases for hole doping and decreases for electron doping. The Raman D-band intensity increases when the Fermi level approaches half of the excitation energy and is higher in the case of electron doping than that of hole doping. These variations can be explained by electron-phonon interaction theory and quantum interference between different Raman pathways in graphene. The intensity ratio of Raman D- and G-band, which is important for defects characterization in graphene, shows a strong dependence on carrier density.

Photoluminescence study of ZnS and ZnS:Pb nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Virpal,, E-mail: virpalsharma.sharma@gmail.com; Hastir, Anita; Kaur, Jasmeet

2015-05-15

Photoluminescence (PL) study of pure and 5wt. % lead doped ZnS prepared by co-precipitation method was conducted at room temperature. The prepared nanoparticles were characterized by X-ray Diffraction (XRD), UV-Visible (UV-Vis) spectrophotometer, Photoluminescence (PL) and Raman spectroscopy. XRD patterns confirm cubic structure of ZnS and PbS in doped sample. The band gap energy value increased in case of Pb doped ZnS nanoparticles. The PL spectrum of pure ZnS was de-convoluted into two peaks centered at 399nm and 441nm which were attributed to defect states of ZnS. In doped sample, a shoulder peak at 389nm and a broad peak centered atmore » 505nm were observed. This broad green emission peak originated due to Pb activated ZnS states.« less

Acoustic Behavior of Hollow Blocks and Bricks Made of Concrete Doped with Waste-Tire Rubber

PubMed Central

Fraile-Garcia, Esteban; Ferreiro-Cabello, Javier; Defez, Beatriz; Peris-Fajanes, Guillermo

2016-01-01

In this paper, we investigate the acoustic behaviour of building elements made of concrete doped with waste-tire rubber. Three different mixtures were created, with 0%, 10%, and 20% rubber in their composition. Bricks, lattice joists, and hollow blocks were manufactured with each mixture, and three different cells were built and tested against aerial and impact noise. The values of the global acoustic isolation and the reduction of the sound pressure level of impacts were measured. Results proved that highly doped elements are an excellent option to isolate low frequency sounds, whereas intermediate and standard elements constitute a most interesting option to block middle and high frequency sounds. In both cases, the considerable amount of waste-tire rubber recycled could justify the employment of the doped materials for the sake of the environment. PMID:28774084

Using response-time latencies to measure athletes’ doping attitudes: the brief implicit attitude test identifies substance abuse in bodybuilders

PubMed Central

2014-01-01

Background Knowing and, if necessary, altering competitive athletes’ real attitudes towards the use of banned performance-enhancing substances is an important goal of worldwide doping prevention efforts. However athletes will not always be willing to reporting their real opinions. Reaction time-based attitude tests help conceal the ultimate goal of measurement from the participant and impede strategic answering. This study investigated how well a reaction time-based attitude test discriminated between athletes who were doping and those who were not. We investigated whether athletes whose urine samples were positive for at least one banned substance (dopers) evaluated doping more favorably than clean athletes (non-dopers). Methods We approached a group of 61 male competitive bodybuilders and collected urine samples for biochemical testing. The pictorial doping Brief Implicit Association Test (BIAT) was used for attitude measurement. This test quantifies the difference in response latencies (in milliseconds) to stimuli representing related concepts (i.e. doping–dislike/like–[health food]). Results Prohibited substances were found in 43% of all tested urine samples. Dopers had more lenient attitudes to doping than non-dopers (Hedges’s g = -0.76). D-scores greater than -0.57 (CI95 = -0.72 to -0.46) might be indicative of a rather lenient attitude to doping. In urine samples evidence of administration of combinations of substances, complementary administration of substances to treat side effects and use of stimulants to promote loss of body fat was common. Conclusion This study demonstrates that athletes’ attitudes to doping can be assessed indirectly with a reaction time-based test, and that their attitudes are related to their behavior. Although bodybuilders may be more willing to reveal their attitude to doping than other athletes, these results still provide evidence that the pictorial doping BIAT may be useful in athletes from other sports, perhaps as a complementary measure in evaluations of the effectiveness of doping prevention interventions. PMID:25209168

Nanopores creation in boron and nitrogen doped polycrystalline graphene: A molecular dynamics study

NASA Astrophysics Data System (ADS)

Izadifar, Mohammadreza; Abadi, Rouzbeh; Nezhad Shirazi, Ali Hossein; Alajlan, Naif; Rabczuk, Timon

2018-05-01

In the present paper, molecular dynamic simulations have been conducted to investigate the nanopores creation on 10% of boron and nitrogen doped polycrystalline graphene by silicon and diamond nanoclusters. Two types of nanoclusters based on silicon and diamond are used to investigate their effect for the fabrication of nanopores. Therefore, three different diameter sizes of the clusters with five kinetic energies of 10, 50, 100, 300 and 500 eV/atom at four different locations in boron or nitrogen doped polycrystalline graphene nanosheets have been perused. We also study the effect of 3% and 6% of boron doped polycrystalline graphene with the best outcome from 10% of doping. Our results reveal that the diamond cluster with diameter of 2 and 2.5 nm fabricates the largest nanopore areas on boron and nitrogen doped polycrystalline graphene, respectively. Furthermore, the kinetic energies of 10 and 50 eV/atom can not fabricate nanopores in some cases for silicon and diamond clusters on boron doped polycrystalline graphene nanosheets. On the other hand, silicon and diamond clusters fabricate nanopores for all locations and all tested energies on nitrogen doped polycrystalline graphene. The area sizes of nanopores fabricated by silicon and diamond clusters with diameter of 2 and 2.5 nm are close to the actual area size of the related clusters for the kinetic energy of 300 eV/atom in all locations on boron doped polycrystalline graphene. The maximum area and the average maximum area of nanopores are fabricated by the kinetic energy of 500 eV/atom inside the grain boundary at the center of the nanosheet and in the corner of nanosheet with diameters of 2 and 3 nm for silicon and diamond clusters on boron and nitrogen doped polycrystalline graphene.

Electron doping evolution of the neutron spin resonance in NaFe 1-xCo xAs

DOE PAGES

Zhang, Chenglin; Song, Yu; Carr, Scott Victor; ...

2016-05-31

Neutron spin resonance, a collective magnetic excitation coupled to superconductivity, is one of the most prominent features shared by a broad family of unconventional superconductors including copper oxides, iron pnictides, and heavy fermions. In this paper, we study the doping evolution of the resonances in NaFe 1–xCo xAs covering the entire superconducting dome. For the underdoped compositions, two resonance modes coexist. As doping increases, the low-energy resonance gradually loses its spectral weight to the high-energy one but remains at the same energy. By contrast, in the overdoped regime we only find one single resonance, which acquires a broader width inmore » both energy and momentum but retains approximately the same peak position even when T c drops by nearly a half compared to optimal doping. Furthermore, these results suggest that the energy of the resonance in electron overdoped NaFe 1–xCo xAs is neither simply proportional to T c nor the superconducting gap but is controlled by the multiorbital character of the system and doped impurity scattering effect.« less

Synthesis, characterization and anti-bacterial activities of pure and Co-doped BaSO4 nanoparticles via chemical precipitation route

NASA Astrophysics Data System (ADS)

Sivakumar, S.; Soundhirarajan, P.; Venkatesan, A.; Khatiwada, Chandra Prasad

2015-02-01

In the present study, we reported that the synthesis and characterization of pure and diverse mole Co-doped BaSO4 nanoparticles have been synthesized by chemical precipitation technique. X-ray diffraction analysis (XRD) brought out the information about the synthesized products is orthorhombic structure and highly crystalline in nature. The average grain size of the samples was determined by using the Debye-Scherer's equation. The existence of functional groups and band area of the samples were confirmed by Fourier transform infrared (FTIR) spectroscopy. The direct and indirect band gap energy of pure and doped samples was carried out using UV-VIS-DRS. The surface micrograph, morphological distribution and elemental compositions of the synthesized products were assessed by scanning electron microscopy (SEM) and Energy dispersive X-ray (EDS). Thermo gravimetric and differential thermal analysis (TG-DTA) techniques were analyzed thermal behaviour of pure and Co-doped samples. Finally, antibacterial activities found the Gram-positive and Gram-negative bacteria are more active in transporter, dehydrogenize and periplasmic enzymatic activities of pure and doped samples.

Cu2+, Co2+ and Cr3+ doping of a calcium phosphate cement influences materials properties and response of human mesenchymal stromal cells.

PubMed

Schamel, Martha; Bernhardt, Anne; Quade, Mandy; Würkner, Claudia; Gbureck, Uwe; Moseke, Claus; Gelinsky, Michael; Lode, Anja

2017-04-01

The application of biologically active metal ions to stimulate cellular reactions is a promising strategy to accelerate bone defect healing. Brushite-forming calcium phosphate cements were modified with low doses of Cu 2+ , Co 2+ and Cr 3+ . The modified cements released the metal ions in vitro in concentrations which were shown to be non-toxic for cells. The release kinetics correlated with the solubility of the respective metal phosphates: 17-45 wt.-% of Co 2+ and Cu 2+ , but <1 wt.-% of Cr 3+ were released within 28days. Moreover, metal ion doping led to alterations in the exchange of calcium and phosphate ions with cell culture medium. In case of cements modified with 50mmol Cr 3+ /mol β-tricalcium phosphate (β-TCP), XRD and SEM analyses revealed a significant amount of monetite and a changed morphology of the cement matrix. Cell culture experiments with human mesenchymal stromal cells indicated that the observed cell response is not only influenced by the released metal ions but also by changed cement properties. A positive effect of modifications with 50mmol Cr 3+ or 10mmol Cu 2+ per mol β-TCP on cell behaviour was observed in indirect and direct culture. Modification with Co 2+ resulted in a clear suppression of cell proliferation and osteogenic differentiation. In conclusion, metal ion doping of the cement influences cellular activities in addition to the effect of released metal ions by changing properties of the ceramic matrix. Copyright © 2016 Elsevier B.V. All rights reserved.

Electronic Structure, Phonon Dynamical Properties, and CO 2 Capture Capability of Na 2 - x M x Zr O 3 ( M = Li ,K): Density-Functional Calculations and Experimental Validations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Yuhua; Lekse, Jonathan; Wang, Xianfeng

2015-04-22

The electronic structural and phonon properties of Na 2-αM αZrO 3 (M ¼ Li,K, α = ¼ 0.0,0.5,1.0,1.5,2.0) are investigated by first-principles density-functional theory and phonon dynamics. The thermodynamic properties of CO 2 absorption and desorption in these materials are also analyzed. With increasing doping level α, the binding energies of Na 2-αLi αZrO 3 are increased while the binding energies of Na 2-α K αZrO 3 are decreased to destabilize the structures. The calculated band structures and density of states also show that, at the same doping level, the doping sites play a significant role in the electronic properties.more » The phonon dispersion results show that few soft modes are found in several doped configurations, which indicates that these structures are less stable than other configurations with different doping levels. From the calculated relationships among the chemical-potential change, the CO 2 pressure, and the temperature of the CO 2 capture reactions by Na 2-αM αZrO 3, and from thermogravimetric-analysis experimental measurements, the Li- and K-doped mixtures Na 2-αM αZrO 3 have lower turnover temperatures (T t) and higher CO 2 capture capacities, compared to pure Na 2ZrO 3. The Li-doped systems have a larger T t decrease than the K-doped systems. When increasing the Li-doping level α, the T t of the corresponding mixture Na 2-αLi αZrO 3 decreases further to a low-temperature range. However, in the case of K-doped systems Na 2-αK αZrO 3, although doping K into Na 2ZrO 3 initially shifts its T t to lower temperatures, further increases of the K-doping level α causes T t to increase. Therefore, doping Li into Na 2ZrO 3 has a larger influence on its CO 2 capture performance than the K-doped Na 2ZrO 3. Compared with pure solidsM 2ZrO 3, after doping with other elements, these doped systems’ CO 2 capture performances are improved.« less

Effect of charging on silicene with alkali metal atom adsorption

NASA Astrophysics Data System (ADS)

Li, Manman; Li, Zhongyao; Gong, Shi-Jing

2018-02-01

Based on first-principles calculations, we studied the effects of charging on the structure, binding energy and electronic properties of silicene with alkali metal (AM) atom (Li, Na or K) adsorption. In AMSi2, electron doping enlarges the lattice constant of silicene, while the influence of hole doping is non-monotonic. In AMSi8, the lattice constant increases/decreases almost linearly with the increase in electron/hole doping. In addition, the AM-Si vertical distance can be greatly enlarged by excessive hole doping in both AMSi2 and AMSi8 systems. When the hole doping is as large as  +e per unit cell, both AMSi2 and AMSi8 can be transformed from metal to semiconductor. However, the binding energy would be negative in the AM+ Si2 semiconductor. It suggests AM+ Si2 is unstable in this case. In addition, the electron doping and the AM-Si vertical distance would greatly influence the band gap of silicene in LiSi8 and NaSi8, while the band gap in KSi8 is relatively stable. Therefore, KSi8 may be a more practicable material in nanotechnology.

2.05 µm holmium-doped all-fiber laser diode-pumped at 1.125 µm

NASA Astrophysics Data System (ADS)

Kir'yanov, A. V.; Barmenkov, Y. O.; Villegas Garcia, I.

2017-08-01

We report a holmium-doped all-fiber laser oscillating at ~2.05 µm in continuous wave at direct in-core pumping by a 1.125 µm laser diode. Two types of home-made holmium-doped alumino-germano-silicate fiber (HDF), differentiated in the Ho3+ doping level, were fabricated to implement the laser, for revealing the effect of Ho3+ concentration upon the laser output. Firstly, the fibers were characterized thoroughly from the material and optical viewpoints. Then, laser action with both HDFs was assessed using the simplest Fabry-Perot cavity, assembled by a couple of spectrally adjusted fiber Bragg gratings, also made-in-house. In the best case, when using the lower-doped HDF of proper length (1.4 m), low threshold (~370 mW) and moderate slope efficiency (~13%) of ~2.05 µm lasing were obtained at 1.125 µm diode pumping. Long-term stability, high brightness, low noise, and purely CW operation are shown to be the laser’s attractive features. Yet, when utilizing the heavier-doped HDF, laser output is revealed to be overall worse, with a possible reason being the deteriorating Ho3+ concentration-related effects.

Electrospark doping of steel with tungsten

DOE Office of Scientific and Technical Information (OSTI.GOV)

Denisova, Yulia, E-mail: yukolubaeva@mail.ru; Shugurov, Vladimir, E-mail: shugurov@opee.hcei.tsc.ru; Petrikova, Elizaveta, E-mail: elizmarkova@yahoo.com

2016-01-15

The paper is devoted to the numerical modeling of thermal processes and the analysis of the structure and properties of the surface layer of carbon steel subjected to electrospark doping with tungsten. The problem of finding the temperature field in the system film (tungsten) / substrate (iron) is reduced to the solution of the heat conductivity equation. A one-dimensional case of heating and cooling of a plate with the thickness d has been considered. Calculations of temperature fields formed in the system film / substrate synthesized using methods of electrospark doping have been carried out as a part of one-dimensionalmore » approximation. Calculations have been performed to select the mode of the subsequent treatment of the system film / substrate with a high-intensity pulsed electron beam. Authors revealed the conditions of irradiation allowing implementing processes of steel doping with tungsten. A thermodynamic analysis of phase transformations taking place during doping of iron with tungsten in equilibrium conditions has been performed. The studies have been carried out on the surface layer of the substrate modified using the method of electrospark doping. The results showed the formation in the surface layer of a structure with a highly developed relief and increased strength properties.« less

2.05-μm Holmium-doped all-fiber continuous-wave laser at in-core diode-pumping at 1.125 μm

NASA Astrophysics Data System (ADS)

Kir'yanov, Alexander V.; Barmenkov, Yuri O.

2017-08-01

We report a Holmium-doped all-fiber laser oscillating in continuous-wave at 2.05 μm, at in-core pumping by a 1.125-μm laser diode. The active fibers employed are alumino-germano-silicate fibers doped with Ho3+ at concentrations of 1.2×1019 and 1.8×1019 cm-3. The laser is implemented in non-optimized Fabry-Perot cavity's geometry, composed of a couple of fiber Bragg gratings with reflectivity of 99 and 90%. When using the lower doped Holmium-doped fiber of proper length (1.4 m), low threshold ( 370 mW) and moderate slope efficiency ( 13%) of 2.05-μm lasing were obtained. High-brightness (laser line's width is 60 pm) and good noise-to-signal ratio (<0.006) are the laser's attractivities. In case of the heavier doped fiber of optimal length (1.2 m), the laser output (threshold of 430 mW, slope efficiency of 9%, output power of 9 mW, laser line's width of 110 pm, noise-to-signal ratio of <0.009) is worse, with a probable reason being deteriorating Ho3+ concentration effects.

Effect of cobalt doping on the mechanical properties of ZnO nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vahtrus, Mikk; Šutka, Andris

In this work, we investigate the influence of doping on the mechanical properties of ZnO nanowires (NWs) by comparing the mechanical properties of pure and Co-doped ZnO NWs grown in similar conditions and having the same crystallographic orientation [0001]. The mechanical characterization included three-point bending tests made with atomic force microscopy and cantilever beam bending tests performed inside scanning electron microscopy. It was found that the Young's modulus of ZnO NWs containing 5% of Co was approximately a third lower than that of the pure ZnO NWs. Bending strength values were comparable for both materials and in both cases weremore » close to theoretical strength indicating high quality of NWs. Dependence of mechanical properties on NW diameter was found for both doped and undoped ZnO NWs. - Highlights: •Effect of Co doping on the mechanical properties of ZnO nanowires is studied. •Co substitutes Zn atoms in ZnO crystal lattice. •Co addition affects crystal lattice parameters. •Co addition results in significantly decreased Young's modulus of ZnO. •Bending strength for doped and undoped wires is close to the theoretical strength.« less

Suppression of Random Dopant-Induced Threshold Voltage Fluctuations in Sub-0.1-(micron)meter MOSFET's with Epitaxial and (delta)-Doped Channels

NASA Technical Reports Server (NTRS)

Asenov, Asen; Saini, Subhash

1999-01-01

A detailed three-dimensional (3-D) statistical 'atomistic' simulation study of fluctuation-resistant sub-0.1-(micron)meter MOSFET architectures with epitaxial channels and delta doping is presented. The need for enhancing the fluctuation resistance of the sub-0.1-(micron)meter generation transistors is highlighted by presenting summarized results from atomistic simulations of a wide range of conventional devices with uniformly doped channel. According to our atomistic results, the doping concentration dependence of the random dopant-induced threshold voltage fluctuations in conventional devices is stronger than the analytically predicted fourth-root dependence. As a result of this, the scaling of such devices will be restricted by the "intrinsic" random dopant-induced fluctuations earlier than anticipated. Our atomistic simulations confirm that the introduction of a thin epitaxial layer in the MOSFET's channel can efficiently suppress the random dopant-induced threshold voltage fluctuations in sub-0.1-(micron)meter devices. For the first time, we observe an "anomalous" reduction in the threshold voltage fluctuations with an increase in the doping concentration behind the epitaxial channel, which we attribute to screening effects. Also, for the first time we study the effect of a delta-doping, positioned behind the epitaxial layer, on the intrinsic threshold voltage fluctuations. Above a certain thickness of epitaxial layer, we observe a pronounced anomalous decrease in the threshold voltage fluctuation with the increase of the delta doping. This phenomenon, which is also associated with screening, enhances the importance of the delta doping in the design of properly scaled fluctuation-resistant sub-0.1-(micron)meter MOSFET's. Index Terms-Doping, fluctuations, MOSFET, semiconductor device simulation, silicon devices, threshold.

Metal Doping Effect of the M-Co2P/Nitrogen-Doped Carbon Nanotubes (M = Fe, Ni, Cu) Hydrogen Evolution Hybrid Catalysts.

PubMed

Pan, Yuan; Liu, Yunqi; Lin, Yan; Liu, Chenguang

2016-06-08

The enhancement of catalytic performance of cobalt phosphide-based catalysts for the hydrogen evolution reaction (HER) is still challenging. In this work, the doping effect of some transition metal (M = Fe, Ni, Cu) on the electrocatalytic performance of the M-Co2P/NCNTs (NCNTs, nitrogen-doped carbon nanotubes) hybrid catalysts for the HER was studied systematically. The M-Co2P/NCNTs hybrid catalysts were synthesized via a simple in situ thermal decomposition process. A series of techniques, including X-ray diffraction, X-ray photoelectron spectroscopy, inductively coupled plasma-optical emission spectrometry, transmission electron microscopy, and N2 sorption were used to characterize the as-synthesized M-Co2P/NCNTs hybrid catalysts. Electrochemical measurements showed the catalytic performance according to the following order of Fe-Co2P/NCNTs > Ni-Co2P/NCNTs > Cu-Co2P/NCNTs, which can be ascribed to the difference of structure, morphology, and electronic property after doping. The doping of Fe atoms promote the growth of the [111] crystal plane, resulting in a large specific area and exposing more catalytic active sites. Meanwhile, the Fe(δ+) has the highest positive charge among all the M-Co2P/NCNTs hybrid catalysts after doping. All these changes can be used to contribute the highest electrocatalytic activity of the Fe-Co2P/NCNTs hybrid catalyst for HER. Furthermore, an optimal HER electrocatalytic activity was obtained by adjusting the doping ratio of Fe atoms. Our current research indicates that the doping of metal is also an important strategy to improve the electrocatalytic activity for the HER.

Manipulating charge density waves in 1 T -TaS2 by charge-carrier doping: A first-principles investigation

NASA Astrophysics Data System (ADS)

Shao, D. F.; Xiao, R. C.; Lu, W. J.; Lv, H. Y.; Li, J. Y.; Zhu, X. B.; Sun, Y. P.

2016-09-01

The transition-metal dichalcogenide 1 T -TaS2 exhibits a rich set of charge-density-wave (CDW) orders. Recent investigations suggested that using light or an electric field can manipulate the commensurate CDW (CCDW) ground state. Such manipulations are considered to be determined by charge-carrier doping. Here we use first-principles calculations to simulate the carrier-doping effect on the CCDW in 1 T -TaS2 . We investigate the charge-doping effects on the electronic structures and phonon instabilities of the 1 T structure, and we analyze the doping-induced energy and distortion ratio variations in the CCDW structure. We found that both in bulk and monolayer 1 T -TaS2 , the CCDW is stable upon electron doping, while hole doping can significantly suppress the CCDW, implying different mechanisms of such reported manipulations. Light or positive perpendicular electric-field-induced hole doping increases the energy of the CCDW, so that the system transforms to a nearly commensurate CDW or a similar metastable state. On the other hand, even though the CCDW distortion is more stable upon in-plane electric-field-induced electron injection, some accompanied effects can drive the system to cross over the energy barrier from the CCDW to a nearly commensurate CDW or a similar metastable state. We also estimate that hole doping can introduce potential superconductivity with a Tc of 6-7 K. Controllable switching of different states such as a CCDW/Mott insulating state, a metallic state, and even a superconducting state can be realized in 1 T -TaS2 . As a result, this material may have very promising applications in future electronic devices.

Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

NASA Astrophysics Data System (ADS)

Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S. K.

2014-06-01

We have carried out comprehensive computational and experimental study on the face-centered cubic Ge2Sb2Te5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In2Te3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation α hν = β (hν - E_{{g }} )2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials.

Antidoping program: an important factor in the promotion and protection of the integrity of sport and athlete's health.

PubMed

Mazzeo, Filomena; Monda, Vincenzo; Santamaria, Stefania; Nigro, Ersilia; Valenzano, Anna; Villano, Ines; Cibelli, Giuseppe; Messina, Antonietta; Messina, Giovanni

2017-07-24

Use of performance-enhancing drugs concern not only elite Olympic and Paralympic Games' athletes but also amateur athletes, who are making increasing use of substances and/or methods. Furthermore, a new frontier reached by the doping is the use of genes. World Anti- Doping Agency (WADA), expressly prohibited the participation in competitive sports by the athlete in case of taking banned substances to treat disease in the event that the above assumption implies an excessive improvement of performance. This study aims to analyze and show the doping control as an essential part of the anti-doping program to promote and protect the integrity of sport and athlete's health. Testing is carried out in accordance with the World Anti-Doping Code and several international standards (ISs). The ISs were developed for laboratories, testing, the prohibited list, and for therapeutic use exemptions (TUE). It seems that the 2009 version of the World Anti-Doping Code (WADC) obliges all the healthcare professionals not to assist athletes engaged in doping behaviours; they can be removed from working with athletes. Many people do not know doping's dangerous effects on health. It is necessary, therefore, implement the knowledge on this issue through public and sports institutions information and awareness campaigns. For this reason, local institutions and the National Olympic Committee shall give tools, in particular economic, to carry out the work of education, training, and control.

Effect Of Fluorine Doping On Radiation Hardness Of Graded Index Optical Fibers

NASA Astrophysics Data System (ADS)

Wei, T.; Singh, M. P.; Miniscalco, W. J.; Onorato, P. I. K.; Wall, J. A.

1987-01-01

We report an experimental and theoretical investigation of the effects of doping and processing on precursor defects in graded index multimode fibers. Fabrication parameters that significantly influence radiation sensitivity have been identified. In particular, we examined the role of fluorine doping in defect formation and its relationship to radiation sensitivity. The experimental effort included fiber fabrication and radiation-induced loss measurements on graded index, Ge-doped core fibers. Fluorine was added to the core and/or the cladding of test fibers. Two critical parameters, barrier layer thickness and core dopants, have been identified and correlate with induced loss. In addition, the reproducibility of both fiber fabrication and measurement with respect to induced loss has been tested and found to be excellent. Induced loss was found to be proportional to Ge concentration in the core; however, the trend with fluorine doping was less clear. The experimental results are consistent with molecular dynamics simulations which indicate the types and numbers of structural defects in the glasses. The simulations revealed significant differences in defect types and concentrations among glass corn-positions that included pure silica, Ge-doped silica, and Ge/F-codoped silica. Fluorine codoping decreases the number of germanium-related defects but increases the number of defects associated with silicon.

Synthesis and thermochromic property studies on W doped VO2 films fabricated by sol-gel method.

PubMed

Pan, Guoping; Yin, Jinhua; Ji, Keli; Li, Xiang; Cheng, Xingwang; Jin, Haibo; Liu, Jiping

2017-07-21

Tungsten-doped VO 2 thin films have been synthesized by a modified sol-gel process and followed by a post annealing. Vanadium pentoxide and tungstic acid as raw materials with the addition of hydrogen peroxide, concentrated hydrochloric acid (catalyst) and oxalic acid used as reducing agent were reacted in isobutanol. Finally, the uniform sol of vanadyl oxalate in isobutanol solvent was obtained as precursor. Detailed study suggested that W doped in VO 2 introduces additional electron carriers and induces the formation of V 3+ . Post annealing under vacuum promotes the releasing of chemical stress and generates oxygen vacancies in the samples. Temperature dependent transmittance study revealed that the releasing of chemical stress and deliberately introducing oxygen vacancies in W-doped VO 2 films have positive effects on enhancing its switching ability in the infrared transmittance as the metal-insulator transition (MIT) occurs. The largest switching of transmittance was obtained about 48% in the infrared range at 43 °C in 1.5%W doped VO 2 films, which is significantly larger than the reported ones. The findings in this work open a new way to synthesize the novel and thermochromic W doped VO 2 films with facility and low cost. Therefore, it has extensive application to construct smart windows and electronic devices.

Theoretical analysis of nBn infrared photodetectors

NASA Astrophysics Data System (ADS)

Ting, David Z.; Soibel, Alexander; Khoshakhlagh, Arezou; Gunapala, Sarath D.

2017-09-01

The depletion and surface leakage dark current suppression properties of unipolar barrier device architectures such as the nBn have been highly beneficial for III-V semiconductor-based infrared detectors. Using a one-dimensional drift-diffusion model, we theoretically examine the effects of contact doping, minority carrier lifetime, and absorber doping on the dark current characteristics of nBn detectors to explore some basic aspects of their operation. We found that in a properly designed nBn detector with highly doped excluding contacts the minority carriers are extracted to nonequilibrium levels under reverse bias in the same manner as the high operating temperature (HOT) detector structure. Longer absorber Shockley-Read-Hall (SRH) lifetimes result in lower diffusion and depletion dark currents. Higher absorber doping can also lead to lower diffusion and depletion dark currents, but the benefit should be weighted against the possibility of reduced diffusion length due to shortened SRH lifetime. We also briefly examined nBn structures with unintended minority carrier blocking barriers due to excessive n-doping in the unipolar electron barrier, or due to a positive valence band offset between the barrier and the absorber. Both types of hole blocking structures lead to higher turn-on bias, although barrier n-doping could help suppress depletion dark current.

The effect of air stable n-doping through mild plasma on the mechanical property of WSe2 layers

NASA Astrophysics Data System (ADS)

Xu, Linyan; Qian, Shuangbei; Xie, Yuan; Wu, Enxiu; Hei, Haicheng; Feng, Zhihong; Wu, Sen; Hu, Xiaodong; Guo, Tong; Zhang, Daihua

2018-04-01

Two-dimensional transition metal dichalcogenides have been widely applied to electronic and optoelectronic device owing to their remarkable material properties. Many studies present the platform for regulating the contact resistance via various doping schemes. Here, we report the alteration of mechanical properties of few top layers of the WSe2 flake which are processed by air stable n-doping of N2O with a constant gas flow through mild plasma and present better manufacturability and friability. The single-line nanoscratching experiments on the WSe2 flakes with different doping time reveal that the manufacturable depths are positively correlated with the exposure time at a certain range and tend to be stable afterwards. Meanwhile, material characterization by x-ray photoelectron spectroscopy confirms that the alteration of mechanical properties is owing to the creation of Se vacancies and substitution of O atoms, which breaks the primary molecular structure of the WSe2 flakes. The synchronous Kelvin probe force microscopy and topography results of ROI nanoscratching of a stepped WSe2 sample confirmed that the depth of the degenerate doping is five layers, which was consistent with the single-line scratching experiments. Our results reveal the interrelationship of the mechanical property, chemical bonds and work function changes of the doped WSe2 flakes.

The Influence of Different Metal Ions on the Absorption Properties of Nano-Nickel Zinc Ferrite

PubMed Central

Ma, Zhijun; Mang, Changye; Weng, Xingyuan; Si, Liwei; Zhao, Haitao

2018-01-01

The hydrothermal method was used to dope different amounts of Co2+, Mn2+, and Cu2+ in nano-nickel zinc ferrite powder. X-ray diffraction (XRD), a scanning electron microscopy (TEM), and a vector network analyzer (VNA) were used to explore the influence of doping on particle size, morphology, and electromagnetic wave absorption performance. Pure nanometer cobalt nickel zinc ferrite phase was prepared using the hydrothermal method with an increasing Co2+ content. Results showed that the grain type structure changed from a spherical structure to an irregular quadrilateral structure with the average particle size increasing from 35 nm to 60 nm. The lattice constant increased from 0.8352 to 0.8404 nm with Co2+ doping. The increasing Co2+ can change the position of the absorption peak, increase the bandwidth of the absorber, and improve the performance of the materials in GHz low frequency. The doping ratio of Mn2+ can affect the size of the lattice constant, but nanocrystals are easy to reunite without improving the electromagnetic loss. However, the absorbance performance decreases. For the doping of Cu2+, there is an agglomeration phenomenon. When the doping quantity is 0.15, the absorbing wave performance becomes better. PMID:29641477

The Influence of Different Metal Ions on the Absorption Properties of Nano-Nickel Zinc Ferrite.

PubMed

Ma, Zhijun; Mang, Changye; Weng, Xingyuan; Zhang, Qi; Si, Liwei; Zhao, Haitao

2018-04-11

The hydrothermal method was used to dope different amounts of Co 2+ , Mn 2+ , and Cu 2+ in nano-nickel zinc ferrite powder. X-ray diffraction (XRD), a scanning electron microscopy (TEM), and a vector network analyzer (VNA) were used to explore the influence of doping on particle size, morphology, and electromagnetic wave absorption performance. Pure nanometer cobalt nickel zinc ferrite phase was prepared using the hydrothermal method with an increasing Co 2+ content. Results showed that the grain type structure changed from a spherical structure to an irregular quadrilateral structure with the average particle size increasing from 35 nm to 60 nm. The lattice constant increased from 0.8352 to 0.8404 nm with Co 2+ doping. The increasing Co 2+ can change the position of the absorption peak, increase the bandwidth of the absorber, and improve the performance of the materials in GHz low frequency. The doping ratio of Mn 2+ can affect the size of the lattice constant, but nanocrystals are easy to reunite without improving the electromagnetic loss. However, the absorbance performance decreases. For the doping of Cu 2+ , there is an agglomeration phenomenon. When the doping quantity is 0.15, the absorbing wave performance becomes better.

Energy transfer mechanism of Sm3+/Eu3+ co-doped 2CaO-B2O3-P2O5 phosphors

NASA Astrophysics Data System (ADS)

Prasad, V. Reddy; Damodaraiah, S.; Ratnakaram, Y. C.

2018-04-01

Sm3+/Eu3+ co-doped calcium borophosphate phosphors were synthesized by solid state reaction method. 2CaO-B2O3-P2O5: Sm3+/Eu3+ co-doped phosphors were characterized by XRD, SEM, 31P solid state NMR, excitation, photoluminescence (PL) and decay profiles.. XRD profiles showed that the prepared phosphors exhibit a hexagonal phase in crystal structure and SEM results showed that the particles are more irregular morphologies. From 31P NMR spectra of Sm3+/Eu3+ co-doped 2CaO-B2O3-P2O5 phosphors, the chemical shifts located in the positive frequency region indicating the presence of mono-phosphate complexes Q0-(PO43 - ) . Photoluminescence spectra of Sm3+/Eu3+ co-doped 2CaO-B2O3-P2O5 phosphors show enhancement in emission intensity of Eu3+ ion due to co-doping with Sm3+ ions through energy transfer process. The energy level mechanism between Sm3+ and Eu3+ ions has been clearly explained. The energy transfer process has also been evidenced by lifetime decay profiles. These results suggest that the prepared phosphors are potential red luminescent optical materials.

The effect of air stable n-doping through mild plasma on the mechanical property of WSe2 layers.

PubMed

Xu, Linyan; Qian, Shuangbei; Xie, Yuan; Wu, Enxiu; Hei, Haicheng; Feng, Zhihong; Wu, Sen; Hu, Xiaodong; Guo, Tong; Zhang, Daihua

2018-04-27

Two-dimensional transition metal dichalcogenides have been widely applied to electronic and optoelectronic device owing to their remarkable material properties. Many studies present the platform for regulating the contact resistance via various doping schemes. Here, we report the alteration of mechanical properties of few top layers of the WSe 2 flake which are processed by air stable n-doping of N 2 O with a constant gas flow through mild plasma and present better manufacturability and friability. The single-line nanoscratching experiments on the WSe 2 flakes with different doping time reveal that the manufacturable depths are positively correlated with the exposure time at a certain range and tend to be stable afterwards. Meanwhile, material characterization by x-ray photoelectron spectroscopy confirms that the alteration of mechanical properties is owing to the creation of Se vacancies and substitution of O atoms, which breaks the primary molecular structure of the WSe 2 flakes. The synchronous Kelvin probe force microscopy and topography results of ROI nanoscratching of a stepped WSe 2 sample confirmed that the depth of the degenerate doping is five layers, which was consistent with the single-line scratching experiments. Our results reveal the interrelationship of the mechanical property, chemical bonds and work function changes of the doped WSe 2 flakes.

Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films

NASA Astrophysics Data System (ADS)

Zhan, Peng; Wang, Weipeng; Liu, Can; Hu, Yang; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2012-02-01

ZnO films became ferromagnetic when defects were introduced by thermal-annealing in flowing argon. This ferromagnetism, as shown by the photoluminescence measurement and positron annihilation analysis, was induced by the singly occupied oxygen vacancy with a saturated magnetization dependent positively on the amount of this vacancy. This study clarified the origin of the ferromagnetism of un-doped ZnO thin films and provides possibly an alternative way to prepare ferromagnetic ZnO films.

Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

NASA Astrophysics Data System (ADS)

Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho Kyun; You, Min Youl; Jin, Jun-Eon; Choi, Miri; Cho, Jiung; Kim, Gyu-Tae

2018-02-01

Doping effects in devices based on two-dimensional (2D) materials have been widely studied. However, detailed analysis and the mechanism of the doping effect caused by encapsulation layers has not been sufficiently explored. In this work, we present experimental studies on the n-doping effect in WSe2 field effect transistors (FETs) with a high-k encapsulation layer (Al2O3) grown by atomic layer deposition. In addition, we demonstrate the mechanism and origin of the doping effect. After encapsulation of the Al2O3 layer, the threshold voltage of the WSe2 FET negatively shifted with the increase of the on-current. The capacitance-voltage measurements of the metal insulator semiconductor (MIS) structure proved the presence of the positive fixed charges within the Al2O3 layer. The flat-band voltage of the MIS structure of Au/Al2O3/SiO2/Si was shifted toward the negative direction on account of the positive fixed charges in the Al2O3 layer. Our results clearly revealed that the fixed charges in the Al2O3 encapsulation layer modulated the Fermi energy level via the field effect. Moreover, these results possibly provide fundamental ideas and guidelines to design 2D materials FETs with high-performance and reliability.

The effect of ionic Co presence on the structural, optical and photocatalytic properties of modified cobalt-titanate nanotubes.

PubMed

Barrocas, B; Silvestre, A J; Rolo, A G; Monteiro, O C

2016-07-21

With the aim of producing materials with enhanced optical and photocatalytic properties, titanate nanotubes (TNTs) modified by cobalt doping (Co-TNT) and by Na(+)→ Co ion-exchange (TNT/Co) were successfully prepared by a hydrothermal method. The influence of the doping level and of the cobalt position in the TNT crystalline structure was studied. Although no perceptible influence of the cobalt ion position on the morphology of the prepared titanate nanotubes was observed, the optical behaviour of the cobalt modified samples is clearly dependent on the cobalt ions either substituting the Ti(4+) ions in the TiO6 octahedra building blocks of the TNT structure (doped samples) or replacing the Na(+) ions between the TiO6 interlayers (ion-exchange samples). The catalytic ability of these materials on pollutant photodegradation was investigated. First, the evaluation of hydroxyl radical formation using the terephthalic acid as a probe was performed. Afterwards, phenol, naphthol yellow S and brilliant green were used as model pollutants. Anticipating real world situations, photocatalytic experiments were performed using solutions combining these pollutants. The results show that the Co modified TNT materials (Co-TNT and TNT/Co) are good catalysts, the photocatalytic performance being dependent on the Co/Ti ratio and on the structural metal location. The Co(1%)-TNT doped sample was the best photocatalyst for all the degradation processes studied.

Effects of shape, size, and pyrene doping on electronic properties of graphene nanoflakes.

PubMed

Kuamit, Thanawit; Ratanasak, Manussada; Rungnim, Chompoonut; Parasuk, Vudhichai

2017-11-25

Effects of size, shape, and pyrene doping on electronic properties of graphene nanoflakes (GNFs) were theoretically investigated using density functional theory method with PBE, B3PW91, and M06-2X functionals and cc-pVDZ basis set. Two shapes of zigzag GNFs, hexagonal (HGN) and rhomboidal (RGN), were considered. The energy band gap of GNF depends on shape and decreases with size. The HGN has larger band gap energy (1.23-3.96 eV) than the RGN (0.13-2.12 eV). The doping of pyrene and pyrene derivatives on both HGN and RGN was also studied. The adsorption energy of pyrene and pyrene derivatives on GNF does not depend on the shape of GNFs with energies between 21 and 27 kcal mol -1 . The substituent on pyrene enhances the binding to GNF but the strength does not depend on electron withdrawing or donating capability. The doping by pyrene and pyrene derivatives also shifts the HOMO and LUMO energies of GNFs. Both positive (destabilizing) and negative (stabilizing) shifts on HOMO and LUMO of GNFs were seen. The direction and magnitude of the shift do not follow the electron withdrawing and donating capability of pyrene substituents. However, only a slight shift was observed for doped RGN. A shift of 0.19 eV was noticed for HOMO of HGN doped with 1-aminopyrene (pyNH 2 ) and of 0.04 eV for LUMO of HGN doped with 1-pyrenecarboxylic acid (pyCOOH). Graphical Abstract HOMO and LUMO Energies of pyrene/pyrene derivatives doped Graphene Nanoflakes.

Androgens and doping tests: genetic variation and pit-falls

PubMed Central

Rane, Anders; Ekström, Lena

2012-01-01

The large variation in disposition known for most drugs is also true for anabolic androgenic steroids. Genetic factors are probably the single most important cause of this variation. Further, there are reasons to believe that there is a corresponding variation in efficacy of doping agents. Doped individuals employ a large variety of doping strategies in respect of choice of substance, dose, dose interval, duration of treatment and use of other drugs for enforcement of effects or correction of side effects. Metabolic steps up-stream and down-stream of testosterone are genetically variable and contribute substantially to the variation in disposition of testosterone, the most common doping agent in sports and in society. Large inter- and intra-ethnic variation in testosterone glucuronidation and excretion is described as well as the pit-falls in evaluation of testosterone doping test results. The hydrolysis and bioactivation of testosterone enanthate is also genetically variable yielding a 2–3 fold variation in excretion rate and serum concentration, thereby implicating a substantial variation in ‘efficacy’ of testosterone. Given this situation it is logical to adopt the new findings in the doping control programme. The population based cut-off level for the testosterone : epitestosterone ratio should be replaced by a Bayesian interpretation of consecutive tests in the same individual. When combined with the above genetic information the sensitivity of the test is considerably improved. The combination of the three approaches should reduce the rate of falsely negative or positive results and the number of expensive follow-up tests, stipulated by the World Anti-Doping Agency. PMID:22506612

Electronic structure and p-type doping of ZnSnN2

NASA Astrophysics Data System (ADS)

Wang, Tianshi; Janotti, Anderson; Ni, Chaoying

ZnSnN2 is a promising solar-cell absorber material composed of earth abundant elements. Little is known about doping, defects, and how the valence and conduction bands in this material align with the bands in other semiconductors. Using density functional theory with the the Heyd-Scuseria-Ernzerhof hybrid functional (HSE06), we investigate the electronic structure of ZnSnN2, its band alignment to other semiconductors, such as GaN and ZnO, the possibility of p-type doping, and the possible causes of the observed unintentional n-type conductivity. We find that the position of the valence-band maximum of ZnSnN2 is 0.55 eV higher than that of GaN, yet the conduction-band minimum is close to that in ZnO. As possible p-type dopants, we explore Li, Na, and K substituting on the Zn site. Finally, we discuss the cause of unintentional n-type conductivity by analyzing the position of the conduction-band minimum with respect to that of GaN and ZnO.

The Pseudogap in Multiband Superconductivity

NASA Astrophysics Data System (ADS)

Kristoffel, N.; Rubin, P.

2012-11-01

The pseudogap (PG) excitation is analyzed as a natural event in multiband superconductivity. It corresponds to minimal quasiparticle excitation energy of an electron band not touched by the chemical potential. The critical points of the phase diagram are determined by vanishing conditions for normal state pseudogaps (NPG). For two bands (gapped or overlapping) these are positioned on edges of the superconducting dome. Theoretical background for a three-band system with two interband pairing channels is developed. There are three independent superconducting gaps (SCG). The PG is associated with the band component possessing a bare gap which can be quenched by doping. At low doping the PG and the SCG of another band component coexist. The critical point is not fixed in respect of the transition temperature (Tc) dome background. The depletion of the PG associated states is restored here. This effect can also be indirect by the participation of these states in determining the chemical potential position. At the critical point the PG looses its normal state contribution and continues as the SCG of the same band. Illustrative examples on the doping scale have been calculated.

Ultrafast Spectral Photoresponse of Bilayer Graphene: Optical Pump-Terahertz Probe Spectroscopy.

PubMed

Kar, Srabani; Nguyen, Van Luan; Mohapatra, Dipti R; Lee, Young Hee; Sood, A K

2018-02-27

Photoinduced terahertz conductivity Δσ(ω) of Bernal stacked bilayer graphene (BLG) with different dopings is measured by time-resolved optical pump terahertz probe spectroscopy. The real part of photoconductivity Δσ(ω) (Δσ Re (ω)) is positive throughout the spectral range 0.5-2.5 THz in low-doped BLG. This is in sharp contrast to Δσ(ω) for high-doped bilayer graphene where Δσ Re (ω) is negative at low frequency and positive on the high frequency side. We use Boltzmann transport theory to understand quantitatively the frequency dependence of Δσ(ω), demanding the energy dependence of different scattering rates such as short-range impurity scattering, Coulomb scattering, carrier-acoustic phonon scattering, and substrate surface optical phonon scattering. We find that the short-range disorder scattering dominates over other processes. The calculated photoconductivity captures very well the experimental conductivity spectra as a function of lattice temperature varying from 300 to 4 K, without any empirical fitting procedures adopted so far in the literature. This helps us to understand the intraband conductivity of photoexcited hot carriers in 2D materials.

Experimental study of partial substitution of copper with 3d elements in 123 superconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Estrada, J.A.

1989-01-01

About forty superconducting samples of Y and Sm, doped with different concentrations of Mn, Fe, Co, Ni and Zn, were prepared. These samples were characterized by x-ray diffractometry, microprobe analysis, resistance measurements, and SQUID susceptometry. Emphasis was given to the magnetic aspects of the specimens. Two standard procedures were followed with each sample. Mainly, the zero field cooling procedure (ZFC) and the field cooling procedure (FC). In both cases, the magnetic moment was measured at different temperatures after the sample was thermalized. Paramagnetic behavior above T, was observed in all the cases. The experimental results were fitted to the Curie-Weissmore » law, by using SAS (Statistical Analysis System) programs. From this analysis, a range for the effective magnetic moments of the dopant ions was calculated. Also, the density of states at the Fermi level per Cu ion and the Sommerfeld constants were found for each case. In general, lower transition temperatures and higher density of states D({var epsilon}{sub b}F) for Sm doped specimens were observed. The variation of the density of states or {gamma} with the doping has also been analyzed as a function of N. The author notices {gamma} to be linear in N about N{sub max}. Samarium doped samples showed a larger {gamma}, but the slope {alpha} = (d{gamma}/dN) was generally not rare earth dependent. {alpha} did not correlate with {beta} = (dt{sub c}/dN). It was found that {beta}(Zn) {approximately} {beta}(Mn). This decrease in y at N{sub max} was not anticipated in the Matthias' rule.« less

Functional anion concept: effect of fluorine anion on hydrogen storage of sodium alanate.

PubMed

Yin, Li-Chang; Wang, Ping; Kang, Xiang-Dong; Sun, Cheng-Hua; Cheng, Hui-Ming

2007-03-28

Doping NaAlH(4) with Ti-catalyst has produced a promising hydrogen storage system that can be reversibly operated at moderate temperature conditions. Of the various dopant precursors, TiCl(3) was well recognized due to its pronounced catalytic effect on the reversible dehydrogenation processes of sodium aluminium hydrides. Quite recently we experimentally found that TiF(3) was even better than TiCl(3) in terms of the critical hydrogen storage properties of the doped hydrides, in particular the dehydriding performance at Na(3)AlH(6)/NaH + Al step at moderate temperature. We present here the DFT calculation results of the TiF(3) or TiCl(3) doped Na(3)AlH(6). Our computational studies have demonstrated that F(-) and Cl(-) anions differ substantially from each other with regard to the state and function in the doped sodium aluminium hydride. In great contrast to the case of chloride doping where Cl(-) anion constitutes the "dead weight" NaCl, the fluoride doping results in a substitution of H(-) by F(-) anion in the hydride lattice and accordingly, a favorable thermodynamics adjustment. These results well explain the observed dehydriding performance associated with TiF(3)/TiCl(3)-doping. More significantly, the coupled computational and experimental efforts allow us to put forward a "functional anion" concept. This renews the current mechanism understanding in the catalytically enhanced sodium alanate.

Theoretical modeling and experiments on a DBR waveguide laser fabricated by the femtosecond laser direct-write technique.

PubMed

Duan, Yuwen; McKay, Aaron; Jovanovic, Nemanja; Ams, Martin; Marshall, Graham D; Steel, M J; Withford, Michael J

2013-07-29

We present a model for a Yb-doped distributed Bragg reflector (DBR) waveguide laser fabricated in phosphate glass using the femtosecond laser direct-write technique. The model gives emphasis to transverse integrals to investigate the energy distribution in a homogenously doped glass, which is an important feature of femtosecond laser inscribed waveguide lasers (WGLs). The model was validated with experiments comparing a DBR WGL and a fiber laser, and then used to study the influence of distributed rare earth dopants on the performance of such lasers. Approximately 15% of the pump power was absorbed by the doped "cladding" in the femtosecond laser inscribed Yb doped WGL case with the length of 9.8 mm. Finally, we used the model to determine the parameters that optimize the laser output such as the waveguide length, output coupler reflectivity and refractive index contrast.

Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage

NASA Astrophysics Data System (ADS)

E, Lotfi; H, Rezania; B, Arghavaninia; M, Yarmohammadi

2016-07-01

We address the electrical conductivity of bilayer graphene as a function of temperature, impurity concentration, and scattering strength in the presence of a finite bias voltage at finite doping, beginning with a description of the tight-binding model using the linear response theory and Green’s function approach. Our results show a linear behavior at high doping for the case of high bias voltage. The effects of electron doping on the electrical conductivity have been studied via changing the electronic chemical potential. We also discuss and analyze how the bias voltage affects the temperature behavior of the electrical conductivity. Finally, we study the behavior of the electrical conductivity as a function of the impurity concentration and scattering strength for different bias voltages and chemical potentials respectively. The electrical conductivity is found to be monotonically decreasing with impurity scattering strength due to the increased scattering among electrons at higher impurity scattering strength.

Influence of doping on thermal diffusivity of single crystals used in photonics: measurements based on thermal wave methods.

PubMed

Bodzenta, Jerzy; Kaźmierczak-Bałata, Anna; Wokulska, Krystyna B; Kucytowski, Jacek; Łukasiewicz, Tadeusz; Hofman, Władysław

2009-03-01

Three crystals used in solid-state lasers, namely, yttrium aluminum garnet (YAG), yttrium orthovanadate (YVO(4)), and gadolinium calcium oxoborate (GdCOB), were investigated to determine the influence of dopants on their thermal diffusivity. The thermal diffusivity was measured by thermal wave method with a signal detection based on mirage effect. The YAG crystals were doped with Yb or V, the YVO(4) with Nd or Ca and Tm, and the GdCOB crystals contained Nd or Yb. In all cases, the doping caused a decrease in thermal diffusivity. The analysis of complementary measurements of ultrasound velocity changes caused by dopants leads to the conclusion that impurities create phonon scattering centers. This additional scattering reduces the phonon mean free path and accordingly results in the decrease of the thermal diffusivity of the crystal. The influence of doping on lattice parameters was investigated, additionally.

Influence of Nb-doped TiO2 blocking layers as a cascading band structure for enhanced photovoltaic properties

NASA Astrophysics Data System (ADS)

Koo, Bon-Ryul; Oh, Dong-Hyeun; Ahn, Hyo-Jin

2018-03-01

Nb-doped TiO2 (Nb-TiO2) blocking layers (BLs) were developed using horizontal ultrasonic spray pyrolysis deposition (HUSPD). In order to improve the photovoltaic properties of the dye-sensitized solar cells (DSSCs), we optimized the Nb doping level of the Nb-TiO2 BLs by controlling the Nb/Ti molar ratio (0, 5, 6, and 7) of the precursor solution for HUSPD. Compared to bare TiO2 BLs, the Nb-TiO2 BLs formed a cascading band structure using the positive shift of the conduction band minimum of the Nb-TiO2 positioned between fluorine-doped tin oxide (FTO) and TiO2. This results in the increase of the potential current and the suppression of the electron recombination. Hence, it led to the improvement of the electrical conductivity, due to the increased electron concentration by the Nb doping into TiO2. Therefore, the DSSC fabricated with the Nb-TiO2 BLs at a Nb/Ti molar ratio of 6 showed superior photoconversion efficiency (∼7.50 ± 0.20%) as a result of the improved short-circuit current density. This is higher than those with the other Nb-TiO2 BLs and without BL. This improvement of the photovoltaic properties for the DSSCs can be attributed to the synergistic effects of uniform and compact BL relative to the prevention of the backward electron transport at the FTO/electrolyte interface, efficient electron transport at interfaces relative to a cascading band structure of FTO/Nb-TiO2/TiO2 multilayers and the facilitated electron transport at the BLs relative to the increased electrical conductivity of the optimized Nb-TiO2 BLs.

Structurally controllable spin spatial splitter in a hybrid ferromagnet and semiconductor nanostructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Mao-Wang, E-mail: maowanglu@126.com; Cao, Xue-Li; Huang, Xin-Hong

2014-05-07

We theoretically investigate modulation of a tunable δ-potential to the lateral displacement of electrons across a magnetically modulated semiconductor nanostructure. Experimentally, this nanostructure can be produced by depositing a nanosized ferromagnetic stripe with in-plane magnetization on top of a semiconductor heterostructure, while the δ-potential can be realized by means of the atomic layer doping technique. Theoretical analysis reveals that this δ-doping can break the intrinsic symmetry in nanostructure and a considerable spin polarization in the lateral displacement will appear. Numerical calculations demonstrate that both magnitude and sign of spin polarization can be manipulated by changing the height and/or position ofmore » the δ-doping, giving rise to a structurally tunable spin spatial splitter.« less

Pancharatnam-Berry phase and kinetic magnetoelectric effect in trigonal tellurium

NASA Astrophysics Data System (ADS)

Şahin, C.; Rou, J.; Ma, J.; Pesin, D. A.

2018-05-01

We study the kinetic magnetoelectric effect (current-induced magnetization including both the orbital and spin contributions) in three-dimensional conductors, specializing to the case of p -doped trigonal tellurium. We include both intrinsic and extrinsic contributions to the effect, which stem from the band structure of the crystal, and from disorder scattering, respectively. Specifically, we determine the dependence of the kinetic magnetoelectric response on the hole doping in tellurium, and show that the intrinsic and extrinsic effects dominate for low and high levels of doping, respectively. The results of this work imply that three-dimensional helical metals are promising for spintronics applications, in particular, they can provide robust control over current-induced magnetic torques.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thi, Trinh Cham, E-mail: s1240009@jaist.ac.jp; Koyama, Koichi; Ohdaira, Keisuke

We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN{sub x}) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH{sub 3} molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN{sub x}/P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN{sub x} passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRVmore » is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN{sub x} films. The outstanding results obtained imply that SiN{sub x}/P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.« less

Enhancement of surface migration by Mg doping in the metalorganic vapor phase epitaxy of N-polar (000\\bar{1}) GaN/sapphire

NASA Astrophysics Data System (ADS)

Tanikawa, Tomoyuki; Shojiki, Kanako; Aisaka, Takashi; Kimura, Takeshi; Kuboya, Shigeyuki; Hanada, Takashi; Katayama, Ryuji; Matsuoka, Takashi

2014-01-01

With respect to N-polar (000\\bar{1}) GaN grown on a sapphire substrate, the effects of Mg doping on the surface morphology, and the optical, and electrical properties are precisely investigated. By doping Mg, hillocks observed on the surface of (000\\bar{1}) GaN can be suppressed, while step bunching becomes severe. The atomic terrace width is extended with increasing Mg/Ga precursor ratio. Mg doping can promote the surface migration of Ga adatoms on a GaN surface during growth. In the case of heavily Mg-doped GaN, atomic steps become wavy. From photoluminescence spectra, the dominant transition was found to change from near-band-edge transition to donor-acceptor-pair transition. Hall-effect measurement shows p-type conduction at room temperature for a sample grown with the Mg/Ga precursor ratio of 4.5 × 10-3. The activation energy is 143 meV, which is comparable to that of Mg in the conventional Ga-polar (0001) GaN.

Lifshitz topological transitions, induced by doping and deformation in single-crystal bismuth wires

NASA Astrophysics Data System (ADS)

Nikolaeva, A. A.; Konopko, L. A.; Huber, T. E.; Kobylianskaya, A. K.; Para, Gh. I.

2017-02-01

The features associated with the manifestation of Lifshitz electron topological transitions (ETT) in glass-insulated bismuth wires upon qualitative changes to the topology of the Fermi surface are investigated. The variation of the energy spectrum parameters was implemented by doping Bi with an acceptor impurity Sn and using elastic strain of up to 2%, relative to the elongation in the weakly-doped p-type Bi wires. Pure and doped glass-insulated single-crystal bismuth with different diameters and (1011) orientations along the axis were prepared by the Ulitovsky liquid phase casting method. For the first time, ETT-induced anomalies are observed along the temperature dependences of the thermoemf α(T) as triple-changes of the α sign (given heavy doping of Bi wires with an acceptor impurity Sn). The concentration and energy position of the Σ-band given a high degree of bismuth doping with Sn was assessed using the Shubnikov-de Haas effect oscillations, which were detected both from L-electrons and from T-holes in magnetic fields of up to 14 T. It is shown that the Lifshitz electron-topological transitions with elastic deformation of weakly-doped p-type Bi wires are accompanied by anomalies along the deformation dependences of the thermoemf at low temperatures. The effect is interpreted in terms of the formation of a selective scattering channel of L-carriers into the T-band with a high density of states, which is in good agreement with existing theoretical ETT models.

Enlightening the ultrahigh electrical conductivities of doped double-wall carbon nanotube fibers by Raman spectroscopy and first-principles calculations.

PubMed

Tristant, Damien; Zubair, Ahmed; Puech, Pascal; Neumayer, Frédéric; Moyano, Sébastien; Headrick, Robert J; Tsentalovich, Dmitri E; Young, Colin C; Gerber, Iann C; Pasquali, Matteo; Kono, Junichiro; Leotin, Jean

2016-12-01

Highly aligned, packed, and doped carbon nanotube (CNT) fibers with electrical conductivities approaching that of copper have recently become available. These fibers are promising for high-power electrical applications that require light-weight, high current-carrying capacity cables. However, a microscopic understanding of how doping affects the electrical conductance of such CNT fibers in a quantitative manner has been lacking. Here, we performed Raman spectroscopy measurements combined with first-principles calculations to determine the position of the average Fermi energy and to obtain the temperature of chlorosulfonic-acid-doped double-wall CNT fibers under high current. Due to the unique way in which double-wall CNT Raman spectra depend on doping, it is possible to use Raman data to determine the doping level quantitatively. The correspondence between the Fermi level shift and the carbon charge transfer is derived from a tight-binding model and validated by several calculations. For the doped fiber, we were able to associate an average Fermi energy shift of ∼-0.7 eV with a conductance increase by a factor of ∼5. Furthermore, since current induces heating, local temperature determination is possible. Through the Stokes-to-anti-Stokes intensity ratio of the G-band peaks, we estimated a temperature rise at the fiber surface of ∼135 K at a current density of 2.27 × 10 8 A m -2 identical to that from the G-band shift, suggesting that thermalization between CNTs is well achieved.

Role of associated defects in oxygen ion conduction and surface exchange reaction for epitaxial samaria-doped ceria thin films as catalytic coatings

DOE PAGES

Yang, Nan; Shi, Yanuo; Schweiger, Sebastian; ...

2016-05-18

Samaria-doped ceria (SDC) thin films are particularly important for energy and electronic applications such as micro-solid oxide fuel cells, electrolysers, sensors and memristors. In this paper we report a comparative study investigating ionic conductivity and surface reactions for well-grown epitaxial SDC films varying the samaria doping concentration. With increasing doping above 20 mol% of samaria, an enhancement in the defect association was observed by Raman spectroscopy. The role of such defect associates on the films` oxygen ion transport and exchange was investigated by electrochemical impedance spectroscopy and electrochemical strain microscopy (ESM). The measurements reveal that the ionic transport has amore » sharp maximum in ionic conductivity and drop in its activation energy down to 0.6 eV for 20 mol% doping. Increasing the doping concentration further up to 40 mol%, raises the activation energy substantially by a factor of two. We ascribe the sluggish transport kinetics to the "bulk" ionic-near ordering in case of the heavily doped epitaxial films. Analysis of the ESM first order reversal curve measurements indicate that these associated defects may have a beneficial role by lowering the activation of the oxygen exchange "surface" reaction for heavily doped 40 mol% of samaria. We reveal in a model experiment through a solid solution series of samaria doped ceria epitaxial films that the occurrence of associate defects in the bulk affects the surface charging state of the films to increase the exchange rates. Lastly, the implication of these findings are the design of coatings with tuned oxygen surface exchange by control of bulk associate clusters for future electro-catalytic applications.« less

Origin of the defects-induced ferromagnetism in un-doped ZnO single crystals

NASA Astrophysics Data System (ADS)

Zhan, Peng; Xie, Zheng; Li, Zhengcao; Wang, Weipeng; Zhang, Zhengjun; Li, Zhuoxin; Cheng, Guodong; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2013-02-01

We clarified, in this Letter, that in un-doped ZnO single crystals after thermal annealing in flowing argon, the defects-induced room-temperature ferromagnetism was originated from the surface defects and specifically, from singly occupied oxygen vacancies denoted as F+, by the optical and electrical properties measurements as well as positron annihilation analysis. In addition, a positive linear relationship was observed between the ferromagnetism and the F+ concentration, which is in support with the above clarification.

Bacterial-cellulose-derived carbon nanofiber@MnO₂ and nitrogen-doped carbon nanofiber electrode materials: an asymmetric supercapacitor with high energy and power density.

PubMed

Chen, Li-Feng; Huang, Zhi-Hong; Liang, Hai-Wei; Guan, Qing-Fang; Yu, Shu-Hong

2013-09-14

A new kind of high-performance asymmetric supercapacitor is designed with pyrolyzed bacterial cellulose (p-BC)-coated MnO₂ as a positive electrode material and nitrogen-doped p-BC as a negative electrode material via an easy, efficient, large-scale, and green fabrication approach. The optimal asymmetric device possesses an excellent supercapacitive behavior with quite high energy and power density. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dielectric Properties of Polymer Matrix Composites Prepared from Conductive Polymer Treated Fabrics

DTIC Science & Technology

1992-02-01

JPS 09827 finish. The doping agent used was anthraquinone-2 sulfonic acid. (3) A 5 x 5 S2-glass 24 oz. woven roving with an Owens Corning 463 finish...x- I S2-glass 27 oz. woven roving with an Owens Corning 933 finish, nominally equiv- alent to the JPS 09827 finish. The doping agent used was...were fabricated by laminating the layers of Fabric with wet polyester resin ( Owens Corning E-780) and subsequently processing the com- posites using the

Magnetic field effect on pentacene-doped sexithiophene diodes

NASA Astrophysics Data System (ADS)

Pham, Song-Toan; Fayolle, Marine; Ohto, Tatsuhiko; Tada, Hirokazu

2017-11-01

We studied the effect of impurities on the magnetoresistance of sexithiophene-based diodes using impedance spectroscopy. The impurities were introduced by doping pentacene molecules into a sexithiophene film through a co-evaporation process. The pentacene molecules act as charge-scattering centers, which trigger the negative magnetoresistance of the device. This makes it possible to tune the value of magnetoresistance from positive to negative by increasing the applied voltage. The beneficial properties induced by impurities suggest a potential route to integrate additional functions into organic devices.

a Study of Oxygen Precipitation in Heavily Doped Silicon.

NASA Astrophysics Data System (ADS)

Graupner, Robert Kurt

Gettering of impurities with oxygen precipitates is widely used during the fabrication of semiconductors to improve the performance and yield of the devices. Since the effectiveness of the gettering process is largely dependent on the initial interstitial oxygen concentration, accurate measurements of this parameter are of considerable importance. Measurements of interstitial oxygen following thermal cycles are required for development of semiconductor fabrication processes and for research into the mechanisms of oxygen precipitate nucleation and growth. Efforts by industrial associations have led to the development of standard procedures for the measurement of interstitial oxygen in wafers. However practical oxygen measurements often do not satisfy the requirements of such standard procedures. An additional difficulty arises when the silicon wafer has a low resitivity (high dopant concentration). In such cases the infrared light used for the measurement is severely attenuated by the electrons of holes introduced by the dopant. Since such wafers are the substrates used for the production of widely used epitaxial wafers, this measurement problem is economically important. Alternative methods such as Secondary Ion Mass Spectroscopy or Gas Fusion Analysis have been developed to measure oxygen in these cases. However, neither of these methods is capable of distinguishing interstitial oxygen from precipitated oxygen as required for precipitation studies. In addition to the commercial interest in heavily doped silicon substrates, they are also of interest for research into the role of point defects in nucleation and precipitation processes. Despite considerable research effort, there is still disagreement concerning the type of point defect and its role in semiconductor processes. Studies of changes in the interstitial oxygen concentration of heavily doped and lightly doped silicon wafers could help clarify the role of point defects in oxygen nucleation and precipitation processes. This could lead to more effective control and use of oxygen precipitation for gettering. One of the principal purposes of this thesis is the extension of the infrared interstitial oxygen measurement technique to situations outside the measurement capacities of the standard technique. These situations include silicon slices exhibiting interfering precipitate absorption bands and heavily doped n-type silicon wafers. A new method is presented for correcting for the effect of multiple reflections in silicon wafers with optically rough surfaces. The technique for the measurement of interstitial oxygen in heavily doped n-type wafers is then used to perform a comparative study of oxygen precipitation in heavily antimony doped (.035 ohm-cm) silicon and lightly doped p-type silicon. A model is presented to quantitatively explain the observed suppression of defect formation in heavily doped n-type wafers.

Analgesics use in competitive triathletes: its relationship to doping and on predicting its usage.

PubMed

Dietz, Pavel; Dalaker, Robert; Letzel, Stephan; Ulrich, Rolf; Simon, Perikles

2016-10-01

The two major objectives of this study were (i) to assess variables that predict the use of analgesics in competitive athletes and (ii) to test whether the use of analgesics is associated with the use of doping. A questionnaire primarily addressing the use of analgesics and doping was distributed among 2,997 triathletes. Binary logistic regression analysis was performed to predict the use of analgesics. Moreover, the randomised response technique (RRT) was used to estimate the prevalence of doping in order to assess whether users of analgesics have a higher potential risk for doping than non-users. Statistical power analyses were performed to determine sample size. The bootstrap method was used to assess the statistical significance of the prevalence difference for doping between users and non-users of analgesics. Four variables from a pool of 16 variables were identified that predict the use of analgesics. These were: "version of questionnaire (English)", "gender (female)", "behaviour in case of pain (continue training)", and "hours of training per week (>12 h/week)". The 12-month prevalence estimate for the use of doping substances (overall estimate 13.0%) was significantly higher in athletes that used analgesics (20.4%) than in those athletes who did not use analgesics (12.4%). The results of this study revealed that athletes who use analgesics prior to competition may be especially prone to using doping substances. The predictors of analgesic use found in the study may be of importance to prepare education material and prevention models against the misuse of drugs in athletes.

Native defect properties and p -type doping efficiency in group-IIA doped wurtzite AlN

NASA Astrophysics Data System (ADS)

Zhang, Yong; Liu, Wen; Niu, Hanben

2008-01-01

Using the first-principles full-potential linearized augmented plane-wave (FPLAPW) method based on density functional theory (DFT), we have investigated the native defect properties and p -type doping efficiency in AlN doped with group-IIA elements such as Be, Mg, and Ca. It is shown that nitrogen vacancies (VN) have low formation energies and introduce deep donor levels in wurtzite AlN, while in zinc blende AlN and GaN, these levels are reported to be shallow. The calculated acceptor levels γ(0/-) for substitutional Be (BeAl) , Mg (MgAl) , and Ca (CaAl) are 0.48, 0.58, and 0.95eV , respectively. In p -type AlN, Be interstitials (Bei) , which act as donors, have low formation energies, making them a likely compensating center in the case of acceptor doping. Whereas, when N-rich growth conditions are applied, Bei are energetically not favorable. It is found that p -type doping efficiency of substitutional Be, Mg, and Ca impurities in w-AlN is affected by atomic size and electronegativity of dopants. Among the three dopants, Be may be the best candidate for p -type w-AlN . N-rich growth conditions help us to increase the concentration of BeAl , MgAl , and CaAl .

Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Takatsu, J.; Fuji, R.; Tatebayashi, J.; Timmerman, D.; Lesage, A.; Gregorkiewicz, T.; Fujiwara, Y.

2018-04-01

We report on the growth and optical properties of Tm-doped AlGaN layers by organometallic vapor phase epitaxy (OMVPE). The morphological and optical properties of Tm-doped GaN (GaN:Tm) and Tm-doped AlGaN (AlGaN:Tm) were investigated by Nomarski differential interference contrast microscopy and photoluminescence (PL) characterization. Nomarski images reveal an increase of surface roughness upon doping Tm into both GaN and AlGaN layers. The PL characterization of GaN:Tm shows emission in the near-infrared range originating from intra-4f shell transitions of Tm3+ ions. In contrast, AlGaN:Tm also exhibits blue light emission from Tm3+ ions. In that case, the wider band gap of the AlGaN host allows energy transfer to higher states of the Tm3+ ions. With time-resolved PL measurements, we could distinguish three types of luminescent sites of Tm3+ in the AlGaN:Tm layer, having different decay times. Our results confirm that Tm ions can be doped into GaN and AlGaN by OMVPE, and show potential for the fabrication of novel high-color-purity blue light emitting diodes.

A simplified approach to the band gap correction of defect formation energies: Al, Ga, and In-doped ZnO

NASA Astrophysics Data System (ADS)

Saniz, R.; Xu, Y.; Matsubara, M.; Amini, M. N.; Dixit, H.; Lamoen, D.; Partoens, B.

2013-01-01

The calculation of defect levels in semiconductors within a density functional theory approach suffers greatly from the band gap problem. We propose a band gap correction scheme that is based on the separation of energy differences in electron addition and relaxation energies. We show that it can predict defect levels with a reasonable accuracy, particularly in the case of defects with conduction band character, and yet is simple and computationally economical. We apply this method to ZnO doped with group III elements (Al, Ga, In). As expected from experiment, the results indicate that Zn substitutional doping is preferred over interstitial doping in Al, Ga, and In-doped ZnO, under both zinc-rich and oxygen-rich conditions. Further, all three dopants act as shallow donors, with the +1 charge state having the most advantageous formation energy. Also, doping effects on the electronic structure of ZnO are sufficiently mild so as to affect little the fundamental band gap and lowest conduction bands dispersion, which secures their n-type transparent conducting behavior. A comparison with the extrapolation method based on LDA+U calculations and with the Heyd-Scuseria-Ernzerhof hybrid functional (HSE) shows the reliability of the proposed scheme in predicting the thermodynamic transition levels in shallow donor systems.

Modulation-Doped In2 O3 /ZnO Heterojunction Transistors Processed from Solution.

PubMed

Khim, Dongyoon; Lin, Yen-Hung; Nam, Sungho; Faber, Hendrik; Tetzner, Kornelius; Li, Ruipeng; Zhang, Qiang; Li, Jun; Zhang, Xixiang; Anthopoulos, Thomas D

2017-05-01

This paper reports the controlled growth of atomically sharp In 2 O 3 /ZnO and In 2 O 3 /Li-doped ZnO (In 2 O 3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In 2 O 3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In 2 O 3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In 2 O 3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In 2 O 3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Negative differential resistance and rectifying performance induced by doped graphene nanoribbons p-n device

NASA Astrophysics Data System (ADS)

Zhou, Yuhong; Qiu, Nianxiang; Li, Runwei; Guo, Zhansheng; Zhang, Jian; Fang, Junfeng; Huang, Aisheng; He, Jian; Zha, Xianhu; Luo, Kan; Yin, Jingshuo; Li, Qiuwu; Bai, Xiaojing; Huang, Qing; Du, Shiyu

2016-03-01

Employing nonequilibrium Green's Functions in combination with density functional theory, the electronic transport properties of armchair graphene nanoribbon (GNR) devices with various widths are investigated in this work. In the adopted model, two semi-infinite graphene electrodes are periodically doped with boron or nitrogen atoms. Our calculations reveal that these devices have a striking nonlinear feature and show notable negative differential resistance (NDR). The results also indicate the diode-like properties are reserved and the rectification ratios are high. It is found the electronic transport properties are strongly dependent on the width of doped nanoribbons and the positions of dopants and three distinct families are elucidated for the current armchair GNR devices. The NDR as well as rectifying properties can be well explained by the variation of transmission spectra and the relative shift of discrete energy states with applied bias voltage. These findings suggest that the doped armchair GNR is a promising candidate for the next generation nanoscale device.

Correlation between defect transition levels and thermoelectric operational temperature of doped CrSi2

NASA Astrophysics Data System (ADS)

Singh, Abhishek; Pandey, Tribhuwan

2014-03-01

The performance of a thermoelectric material is quantified by figure of merit ZT. The challenge in achieving high ZT value requires simultaneously high thermopower, high electrical conductivity and low thermal conductivity at optimal carrier concentration. So far doping is the most versatile approach used for modifying thermoelectric properties. Previous studies have shown that doping can significantly improve the thermoelectric performance, however the tuning the operating temperature of a thermoelectric device is a main issue. Using first principles density functional theory, we report for CrSi2, a linear relationship between thermodynamic charge state transition levels of defects and temperature at which thermopower peaks. We show for doped CrSi2 that the peak of thermopower occurs at the temperature Tm, which corresponds to the position of defect transition level. Therefore, by modifying the defect transition level, a thermoelectric material with a given operational temperature can be designed. The authors thankfully acknowledge support from ADA under NpMASS.

Cannabis in sport: anti-doping perspective.

PubMed

Huestis, Marilyn A; Mazzoni, Irene; Rabin, Olivier

2011-11-01

Since 2004, when the World Anti-Doping Agency assumed the responsibility for establishing and maintaining the list of prohibited substances and methods in sport (i.e. the Prohibited List), cannabinoids have been prohibited in all sports during competition. The basis for this prohibition can be found in the World Anti-Doping Code, which defines the three criteria used to consider banning a substance. In this context, we discuss the potential of cannabis to enhance sports performance, the risk it poses to the athlete's health and its violation of the spirit of sport. Although these compounds are prohibited in-competition only, we explain why the pharmacokinetics of their main psychoactive compound, Δ(9)-tetrahydrocannabinol, may complicate the results management of adverse analytical findings. Passive inhalation does not appear to be a plausible explanation for a positive test. Although the prohibition of cannabinoids in sports is one of the most controversial issues in anti-doping, in this review we stress the reasons behind this prohibition, with strong emphasis on the evolving knowledge of cannabinoid pharmacology.

Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors.

PubMed

Baek, Eunhye; Rim, Taiuk; Schütt, Julian; Baek, Chang-Ki; Kim, Kihyun; Baraban, Larysa; Cuniberti, Gianaurelio

2017-11-08

We report the first observation of negative photoconductance (NPC) in n- and p-doped Si nanowire field-effect transistors (FETs) and demonstrate the strong influence of doping concentrations on the nonconventional optical switching of the devices. Furthermore, we show that the NPC of Si nanowire FETs is dependent on the wavelength of visible light due to the phonon-assisted excitation to multiple conduction bands with different band gap energies that would be a distinct optoelectronic property of indirect band gap semiconductor. We attribute the main driving force of NPC in Si nanowire FETs to the photogenerated hot electrons trapping by dopants ions and interfacial states. Finally, comparing back- and top-gate modulation, we derive the mechanisms of the transition between negative and positive photoconductance regimes in nanowire devices. The transition is decided by the competition between the light-induced interfacial trapping and the recombination of mobile carriers, which is dependent on the light intensity and the doping concentration.

A one-pot hydrothermal synthesis of 3D nitrogen-doped graphene aerogels-supported NiS2 nanoparticles as efficient electrocatalysts for the oxygen-reduction reaction

NASA Astrophysics Data System (ADS)

Yuan, Wen-Jing; Li, Ju-Chuan; Chen, Ping; Shen, Yu-Hua; Xie, An-Jian

2014-03-01

Nitrogen-doped graphene aerogels-supported NiS2 nanoparticles (NiS2/NG) were synthesized by a one-pot hydrothermal method. In the process, l-cysteine was used not only as the nitrogen source to form the nitrogen-doped graphene aerogels, but also the sulfur source to form NiS2. The nitrogen-doped graphene (NG) hybrids show an interconnected reticulation of NG sheets with uniform deposition of NiS2 NPs, and the NiS2 NPs are deposited on the NG layers. In studying the effects of the NG and NiS2/NG for the ORR, we found that NiS2/NG shows a more positive onset potential, higher current density, and higher electron transfer number (˜4) for the oxygen-reduction reaction (ORR) in alkaline media than NG. Furthermore, NiS2/NG shows better durability and methanol tolerance than the commercial Pt/C catalyst.

Pure and zinc doped nano-hydroxyapatite: Synthesis, characterization, antimicrobial and hemolytic studies

NASA Astrophysics Data System (ADS)

Tank, Kashmira P.; Chudasama, Kiran S.; Thaker, Vrinda S.; Joshi, Mihir J.

2014-09-01

The structural, antimicrobial, and hemolytic properties and bioactivity have been studied of pure hydroxyapatite (HAP) and zinc doped hydroxyapatite (Zn-HAP) nano-particles for their medical applications. Pure HAP and Zn-HAP nano-particles were synthesized by the surfactant mediated approach. The doping of zinc was estimated by EDAX. The average particle size was determined by applying Scherrer's formula to powdered XRD patterns. The nano-particle morphology was studied by TEM and the presence of various functional groups was identified by FTIR spectroscopy. Good antimicrobial activity of nano-HAP and nano-Zn-HAP was found against five organisms, viz., Pseudomonas aeruginosa and Shigella flexneri as Gram negative as well as Micrococcus luteus, Staphylococcous aureus and Bacillus cereus as Gram positive. The ability of new apatite formation on the surface of pure and doped HAP samples was studied by using Simulated Body Fluid (SBF) in vitro. Hemolytic study indicated that all samples were non-hemolytic and suggesting potential application as bone implant material.

The Effects of Added Hydrogen on Noble Gas Discharges Used as Ambient Desorption/Ionization Sources for Mass Spectrometry

NASA Astrophysics Data System (ADS)

Ellis, Wade C.; Lewis, Charlotte R.; Openshaw, Anna P.; Farnsworth, Paul B.

2016-09-01

We demonstrate the effectiveness of using hydrogen-doped argon as the support gas for the dielectric barrier discharge (DBD) ambient desorption/ionization (ADI) source in mass spectrometry. Also, we explore the chemistry responsible for the signal enhancement observed when using both hydrogen-doped argon and hydrogen-doped helium. The hydrogen-doped argon was tested for five analytes representing different classes of molecules. Addition of hydrogen to the argon plasma gas enhanced signals for gas-phase analytes and for analytes coated onto glass slides in positive and negative ion mode. The enhancements ranged from factors of 4 to 5 for gas-phase analytes and factors of 2 to 40 for coated slides. There was no significant increase in the background. The limit of detection for caffeine was lowered by a factor of 79 using H2/Ar and 2 using H2/He. Results are shown that help explain the fundamental differences between the pure-gas discharges and those that are hydrogen-doped for both argon and helium. Experiments with different discharge geometries and grounding schemes indicate that observed signal enhancements are strongly dependent on discharge configuration.

Effects of Pretreatment on the Electronic Properties of Plasma Enhanced Chemical Vapor Deposition Hetero-Epitaxial Graphene Devices

NASA Astrophysics Data System (ADS)

Zhang, Lian-Chang; Shi, Zhi-Wen; Yang, Rong; Huang, Jian

2014-09-01

Quasi-monolayer graphene is successfully grown by the plasma enhanced chemical vapor deposition heteroepitaxial method we reported previously. To measure its electrical properties, the prepared graphene is fabricated into Hall ball shaped devices by the routine micro-fabrication method. However, impurity molecules adsorbed onto the graphene surface will impose considerable doping effects on the one-atom-thick film material. Our experiment demonstrates that pretreatment of the device by heat radiation baking and electrical annealing can dramatically influence the doping state of the graphene and consequently modify the electrical properties. While graphene in the as-fabricated device is highly p-doped, as confirmed by the position of the Dirac point at far more than +60 V, baking treatment at temperatures around 180°C can significantly lower the doping level and reduce the conductivity. The following electrical annealing is much more efficient to desorb the extrinsic molecules, as confirmed by the in situ measurement, and as a result, further modify the doping state and electrical properties of the graphene, causing a considerable drop of the conductivity and a shifting of Dirac point from beyond +60 V to 0 V.

Optical and structural properties of Mo-doped NiTiO3 materials synthesized via modified Pechini methods

NASA Astrophysics Data System (ADS)

Pham, Thanh-Truc; Kang, Sung Gu; Shin, Eun Woo

2017-07-01

In this study, molybdenum (Mo)-doped nickel titanate (NiTiO3) materials were successfully synthesized as a function of Mo content through a modified Pechini method followed by a solvothermal treatment process. Various characterization methods were employed to investigate the optical and structural properties of the materials. XRD patterns clearly showed that the NiTiO3 structure maintained a single phase with no observed crystalline structure transformations, even after the addition of 10 wt.% Mo. In the Raman spectra and XRD patterns, peak positions shifted with a change in Mo content, confirming that the NiTiO3 lattice was doped with Mo. On the other hand, Mo doping of NiTiO3 materials changed their optical properties. DRS-UV demonstrated that the addition of Mo increased photon absorption within the UV region. Relaxation processes were inhibited by Mo doping, which was evident in the PL spectra. Structural properties of the prepared materials were studied via FE-SEM and HR-TEM. The measured surface area increased proportionally with Mo content due to a reduction in grain size of the materials.

Nuclear Magnetic Resonance Reveals Disordered Level-Crossing Physics in the Bose-Glass Regime of the Br-Doped Ni(Cl_{1-x}Br_{x})_{2}-4SC(NH_{2})_{2} Compound at a High Magnetic Field.

PubMed

Orlova, Anna; Blinder, Rémi; Kermarrec, Edwin; Dupont, Maxime; Laflorencie, Nicolas; Capponi, Sylvain; Mayaffre, Hadrien; Berthier, Claude; Paduan-Filho, Armando; Horvatić, Mladen

2017-02-10

By measuring the nuclear magnetic resonance (NMR) T_{1}^{-1} relaxation rate in the Br (bond) doped DTN compound, Ni(Cl_{1-x}Br_{x})_{2}-4SC(NH_{2})_{2}(DTNX), we show that the low-energy spin dynamics of its high magnetic field "Bose-glass" regime is dominated by a strong peak of spin fluctuations found at the nearly doping-independent position H^{*}≅13.6  T. From its temperature and field dependence, we conclude that this corresponds to a level crossing of the energy levels related to the doping-induced impurity states. Observation of the local NMR signal from the spin adjacent to the doped Br allowed us to fully characterize this impurity state. We have thus quantified a microscopic theoretical model that paves the way to better understanding of the Bose-glass physics in DTNX, as revealed in the related theoretical study [M. Dupont, S. Capponi, and N. Laflorencie, Phys. Rev. Lett. 118, 067204 (2017).PRLTAO0031-900710.1103/PhysRevLett.118.067204].

Electropolymerization of camphorsulfonic acid doped conductive polypyrrole anti-corrosive coating for 304SS bipolar plates

NASA Astrophysics Data System (ADS)

Jiang, Li; Syed, Junaid Ali; Gao, Yangzhi; Zhang, Qiuxiang; Zhao, Junfeng; Lu, Hongbin; Meng, Xiangkang

2017-12-01

Conductive polymer coating doped with large molecular organic acid is an alternative method used to protect stainless steel (SS) bipolar plates in proton exchange membrane fuel cells (PEMFCs). However, it is difficult to select the proper doping acid, which improves the corrosion resistance of the coating without affecting its conductivity. In this study, large spatial molecular group camphorsulfonic acid (CSA) doped polypyrrole (PPY) conductive coating was prepared by galvanostatic electropolymerization on 304SS. The electrochemical properties of the coating were evaluated in 0.1 M H2SO4 solution in order to simulate the PEMFC service environment. The results indicate that the coating increased the corrosion potential and shifted Ecorr towards more positive value, particularly the jcorr value of PPY-CSA coated 304SS was dropped from 97.3 to 0.00187 μA cm-2. The long-term immersion tests (660 h) show that the PPY-CSA coating exhibits better corrosion resistance in comparison with the small acid (SO42-) doped PPY-SO42- or PPY/PPY-SO42- coatings. Moreover, the PPY-CSA coating presents low contact resistance and maintains strong corrosion resistance during the prolonged exposure time due to barrier effect and anodic protection.

Phenomenological theories of the low-temperature pseudogap: Hall number, specific heat, and Seebeck coefficient

NASA Astrophysics Data System (ADS)

Verret, S.; Simard, O.; Charlebois, M.; Sénéchal, D.; Tremblay, A.-M. S.

2017-09-01

Since its experimental discovery, many phenomenological theories successfully reproduced the rapid rise of the Hall number nH, going from p at low doping to 1 +p at the critical doping p* of the pseudogap in superconducting cuprates. Further comparison with experiments is now needed in order to narrow down candidates. In this paper, we consider three previously successful phenomenological theories in a unified formalism—an antiferromagnetic mean field (AF), a spiral incommensurate antiferromagnetic mean field (sAF), and the Yang-Rice-Zhang (YRZ) theory. We find a rapid rise in the specific heat and a rapid drop in the Seebeck coefficient for increasing doping across the transition in each of those models. The predicted rises and drops are locked, not to p*, but to the doping where antinodal electron pockets, characteristic of each model, appear at the Fermi surface shortly before p*. While such electron pockets are still to be found in experiments, we discuss how they could provide distinctive signatures for each model. We also show that the range of doping where those electron pockets would be found is strongly affected by the position of the van Hove singularity.

Thermoelectric properties of hole-doped SrTiO3 thin films

NASA Astrophysics Data System (ADS)

Ferreiro-Vila, Elias; Sarantopoulos, Alexandros; Leboran, Victor; Bui, Cong-Tinh; Rivadulla, Francisco; Condense matter Chemistry Group Team

2014-03-01

Two dimensional conductors are expected to show an improved thermoelectric performance due the positive effect of quantum confinement on the thermoelectric power, and the decrease of thermal conductivity by interface boundary scattering. The recent report of a large increase of the thermoelectric power in quantum wells of Nb-doped SrTiO3 (STO) seems to be in agreement with this hypothesis. However, extrinsic effects like the existence of oxygen vacancies that propagate away from the interface cannot be ruled out, and the results are far from clear. Here we will show the thermoelectric properties (electrical conductivity, Seebeck coefficient, and Hall effect), of epitaxial thin-films of (La,Nb)-doped STO. The films have been deposited by PLD on different substrates (STO, LAO...) to study the effect of tensile/compressive stress on the thermoelectric properties of the system. The oxygen pressure during the deposition was carefully controlled to tune the amount of oxygen vacancies and to compare with the cation doping. We have performed a systematic study of the transport properties as a function of thickness and doping, which along with the effect of stress, allows to understand the effect of charge density and dimensionality in an oxide system with promising thermoelectric properties.

Modeling pair distribution functions of rare-earth phosphate glasses using principal component analysis

DOE PAGES

Cole, Jacqueline M.; Cheng, Xie; Payne, Michael C.

2016-10-18

The use of principal component analysis (PCA) to statistically infer features of local structure from experimental pair distribution function (PDF) data is assessed on a case study of rare-earth phosphate glasses (REPGs). Such glasses, co-doped with two rare-earth ions (R and R’) of different sizes and optical properties, are of interest to the laser industry. The determination of structure-property relationships in these materials is an important aspect of their technological development. Yet, realizing the local structure of co-doped REPGs presents significant challenges relative to their singly-doped counterparts; specifically, R and R’ are difficult to distinguish in terms of establishing relativemore » material compositions, identifying atomic pairwise correlation profiles in a PDF that are associated with each ion, and resolving peak overlap of such profiles in PDFs. This study demonstrates that PCA can be employed to help overcome these structural complications, by statistically inferring trends in PDFs that exist for a restricted set of experimental data on REPGs, and using these as training data to predict material compositions and PDF profiles in unknown co-doped REPGs. The application of these PCA methods to resolve individual atomic pairwise correlations in t(r) signatures is also presented. The training methods developed for these structural predictions are pre-validated by testing their ability to reproduce known physical phenomena, such as the lanthanide contraction, on PDF signatures of the structurally simpler singly-doped REPGs. The intrinsic limitations of applying PCA to analyze PDFs relative to the quality control of source data, data processing, and sample definition, are also considered. Furthermore, while this case study is limited to lanthanide-doped REPGs, this type of statistical inference may easily be extended to other inorganic solid-state materials, and be exploited in large-scale data-mining efforts that probe many t(r) functions.« less

Investigation of defect modes in a defective photonic crystal with a semiconductor metamaterial defect

NASA Astrophysics Data System (ADS)

Wu, Meng-Ru; Wu, Chien-Jang; Chang, Shoou-Jinn

2014-11-01

In this work, we theoretically investigate the properties of defect modes in a defective photonic crystal containing a semiconductor metamaterial defect. We consider the structure, (LH)N/DP/(LH)N, where N and P are respectively the stack numbers, L is SiO2, H is InP, and defect layer D is a semiconductor metamaterial composed of Al-doped ZnO (AZO) and ZnO. It is found that, within the photonic band gap, the number of defect modes (transmission peaks) will decrease as the defect thickness increases, in sharp contrast to the case of using usual dielectric defect. The peak height and position can be changed by the variation in the thickness of defect layer. In the angle-dependent defect mode, its position is shown to be blue-shifted as the angle of incidence increases for both TE and TM waves. The analysis of defect mode provides useful information for the design of tunable transmission filter in semiconductor optoelectronics.

Facile microwave-assisted synthesis of Te-doped hydroxyapatite nanorods and nanosheets and their characterizations for bone cement applications.

PubMed

Yahia, I S; Shkir, Mohd; AlFaify, S; Ganesh, V; Zahran, H Y; Kilany, Mona

2017-03-01

In this work, the authors have fabricated the nanorods and nanosheets of pure and Te-doped HAp with different Te concentrations (0.04, 0.08, 0.16, 0.24wt%) by microwave-assisted technique at low temperature. The crystallite size, degree of crystallinity and lattice parameters are calculated. FE-SEM study confirms that the fabricated nanostructures are nanorods of diameter about 10nm in undoped and at low concentration of Te doping. However, at and higher concentration, it becomes nanosheets of about 5nm thickness. X-ray diffraction, FT-IR and FT-Raman studies shows that the prepared products are of HAp and Te has been successfully incorporated. From EDX the Ca/P molar ratio of the pure HAp is about 1.740, while this ratio for 0.04, 0.08, 0.16, 0.24 wt% Te doped is about 1.53, 1.678, 1.724, 1.792, respectively. Crystallite size was found to be increased with Te doping from 15nm to 62nm. The value of dielectric constant is found to be enhanced at higher concentrations of Te. The values of linear absorption coefficient were also determined and show that the prepared material with Te doping is more absorbable than pure and will be highly applicable in radiation detection applications. Furthermore, the antimicrobial potential of pure and Te doped HAp was examined against some Gram- negative and positive bacteria and fungi by agar disk diffusion method. The results demonstrated that the antimicrobial activity of Te doped HAp is stronger than that of pure HAp where it exhibited the highest activity against Bacillus subtilis>Candida albicans>Shigella dysenteriae. Copyright © 2016 Elsevier B.V. All rights reserved.

First-principle study of single TM atoms X (X=Fe, Ru or Os) doped monolayer WS2 systems

NASA Astrophysics Data System (ADS)

Zhu, Yuan-Yan; Zhang, Jian-Min

2018-05-01

We report the structural, magnetic and electronic properties of the pristine and single TM atoms X (X = Fe, Ru or Os) doped monolayer WS2 systems based on first-principle calculations. The results show that the W-S bond shows a stronger covalent bond, but the covalency is obviously weakened after the substitution of W atom with single X atoms, especially for Ru (4d75s1) with the easily lost electronic configuration. The smaller total energies of the doped systems reveal that the spin-polarized states are energetically favorable than the non-spin-polarized states, and the smallest total energy of -373.918 eV shows the spin-polarized state of the Os doped monolayer WS2 system is most stable among three doped systems. In addition, although the pristine monolayer WS2 system is a nonmagnetic-semiconductor with a direct band gap of 1.813 eV, single TM atoms Fe and Ru doped monolayer WS2 systems transfer to magnetic-HM with the total moments Mtot of 1.993 and 1.962 μB , while single TM atom Os doped monolayer WS2 systems changes to magnetic-metal with the total moments Mtot of 1.569 μB . Moreover, the impurity states with a positive spin splitting energies of 0.543, 0.276 and 0.1999 eV near the Fermi level EF are mainly contributed by X-dxy and X-dx2-y2 states hybridized with its nearest-neighbor atom W-dz2 states for Fe, Ru and Os doped monolayer WS2 system, respectively. Finally, we hope that the present study on monolayer WS2 will provide a useful theoretical guideline for exploring low-dimensional spintronic materials in future experiments.

Self-determined motivation in sport predicts anti-doping motivation and intention: a perspective from the trans-contextual model.

PubMed

Chan, D K C; Dimmock, J A; Donovan, R J; Hardcastle, S; Lentillon-Kaestner, V; Hagger, M S

2015-05-01

Motivation in sport has been frequently identified as a key factor of young athletes' intention of doping in sport, but there has not been any attempt in scrutinizing the motivational mechanism involved. The present study applied the trans-contextual model of motivation to explain the relationship between motivation in a sport context and motivation and the social-cognitive factors (attitude, subjective norm, perceived behavioral control, and intention) from the theory of planned behavior (TPB) in an anti-doping context. A cross-sectional survey was conducted. Questionnaire data was collected from 410 elite and sub-elite young athletes in Australia (Mean age [17.7±3.9 yr], 55.4% male, Years in sport [9.1±3.2]). We measured the key model variables of study in relation to sport motivation (Behavioral Regulation in Sport Questionnaire), and the motivation (adapted version of the Treatment Self-Regulation Questionnaire) and social cognitive patterns (the theory of planned behavior questionnaire) of doping avoidance. The data was analyzed by variance-based structural equation modeling with bootstrapping of 999 replications. The goodness-of-fit of the hypothesized model was acceptable. The bootstrapped parameter estimates revealed that autonomous motivation and amotivation in sport were positively associated with the corresponding types of motivation for the avoidance of doping. Autonomous motivation, subjective norm, and perceived behavioral control in doping avoidance fully mediated the relationship between autonomous motivation in sport and intention for doping avoidance. The findings support the tenets of the trans-contextual model, and explain how motivation in sport is related to athletes' motivation and intention with respect to anti-doping behaviors. Copyright © 2014 Sports Medicine Australia. Published by Elsevier Ltd. All rights reserved.

Hydrothermally formed three-dimensional hexagon-like P doped Ni(OH)2 rod arrays for high performance all-solid-state asymmetric supercapacitors

NASA Astrophysics Data System (ADS)

Li, Kunzhen; Li, Shikuo; Huang, Fangzhi; Lu, Yan; Wang, Lei; Chen, Hong; Zhang, Hui

2018-01-01

Three dimensional hexagon-like phosphrous (P) doped Ni(OH)2 rod arrays grown on Ni foam (NF) are fabricated by a facile and green one-step hydrothermal process. Ni foam is only reacted in a certain concentration of P containing H2O2 aqueous solution. The possible growth mechanism of the P doped Ni(OH)2 rod arrays is discussed. As a battery-type electrode material in situ formed on Ni foam, the binder-free P doped Ni(OH)2 rod arrays electrode displays a ultrahigh specific areal capacitance of 2.11C cm-2 (3.51 F cm-2) at 2 mA cm-2, and excellent cycling stability (95.5% capacitance retention after 7500 cycles). The assembled all-solid-state asymmetric supercapacitor (AAS) based on such P doped Ni(OH)2 rod arrays as the positive electrode and activated carbon as the negative electrode achieves an energy density of 81.3 Wh kg-1 at the power density of 635 W kg-1. The AAS device also exhibits excellent practical performance, which can easily drive an electric fan (3 W rated power) when two AAS devices are assembled in series. Thus, our synthesized P doped Ni(OH)2 rod arrays has a lot of potential applications in future energy storage prospects.

Thin Film Materials and Devices for Resistive Temperature Sensing Applications

DTIC Science & Technology

2015-05-21

materials are metals, their alloys, semiconducting materials, and thermistor materials such as spinels of manganese, cobalt and nickel oxides. 16 10...improved by doping of the thin films to increase the available carriers for transport. In the case of SiGe:H thin films, Ajmera et al. and Saint John et al...Conference, Freiburg, Fed. Rep. of Germany, 1989. [55] M. Stutzmann, J. Stuke and H. Dersch, "Electron Spin Resonance of Doped Glow-discharge

Ultrasensitive interplay between ferromagnetism and superconductivity in NbGd composite thin films

PubMed Central

Bawa, Ambika; Gupta, Anurag; Singh, Sandeep; Awana, V.P.S.; Sahoo, Sangeeta

2016-01-01

A model binary hybrid system composed of a randomly distributed rare-earth ferromagnetic (Gd) part embedded in an s-wave superconducting (Nb) matrix is being manufactured to study the interplay between competing superconducting and ferromagnetic order parameters. The normal metallic to superconducting phase transition appears to be very sensitive to the magnetic counterpart and the modulation of the superconducing properties follow closely to the Abrikosov-Gor’kov (AG) theory of magnetic impurity induced pair breaking mechanism. A critical concentration of Gd is obtained for the studied NbGd based composite films (CFs) above which superconductivity disappears. Besides, a magnetic ordering resembling the paramagnetic Meissner effect (PME) appears in DC magnetization measurements at temperatures close to the superconducting transition temperature. The positive magnetization related to the PME emerges upon doping Nb with Gd. The temperature dependent resistance measurements evolve in a similar fashion with the concentration of Gd as that with an external magnetic field and in both the cases, the transition curves accompany several intermediate features indicating the traces of magnetism originated either from Gd or from the external field. Finally, the signatures of magnetism appear evidently in the magnetization and transport measurements for the CFs with very low (<1 at.%) doping of Gd. PMID:26725684

Metal-insulator transition in Ba3Fe1 -xRu2 +xO9 : Interplay between site disorder, chemical percolation, and electronic structure

NASA Astrophysics Data System (ADS)

Middey, S.; Aich, Payel; Meneghini, C.; Mukherjee, K.; Sampathkumaran, E. V.; Siruguri, V.; Mahadevan, P.; Ray, Sugata

2016-11-01

Perovskites containing barium metal at the A site often take up unusual hexagonal structures having more than one type of possible sites for the B cation to occupy. This opens up various different B -B - or B -O-B -type connectivities and consequent physical properties which are naturally missing in cubic perovskites. BaRuO3 is one such system where doping of Ru (4 d4 ) by other transition metals (Mn +) creates similar conditions, giving rise to various M -Ru interactions. Interestingly, the 6 H hexagonal structure of doped barium ruthenate triple perovskite (Ba3M Ru2O9 ) seems to possess some internal checks because within the structure M ion always occupies the 2 a site and Ru goes to the 4 f site, allowing only M -O-Ru 180∘ and Ru-O-Ru 90∘ interactions to occur. The only exception is observed in the case of the Fe dopant, which allows us to study almost the full Ba3Fe1 -xRu2 +xO9 series of compounds with wide ranges of x because here Fe ions have the ability to freely go to the 4 f sites and Ru readily takes up the 2 a positions. Therefore, here one has the opportunity to probe the evolution of electronic and magnetic properties as a function of doping by going from BaRuO3 (paramagnetic metal) to BaFeO3 (ferromagnetic insulator). Our detailed experimental and theoretical results show that the series does exhibit a percolative metal-insulator transition with an accompanying but not coincidental magnetic transition as a function of x .

Tuning the electronic hybridization in the heavy fermion cage compound YbFe2Zn20 with Cd doping

NASA Astrophysics Data System (ADS)

Cabrera-Baez, M.; Ribeiro, R. A.; Avila, M. A.

2016-09-01

The tuning of the electronic properties of heavy fermion compounds by chemical substitution provides excellent opportunities for further understanding the physics of hybridized ions in crystal lattices. Here we present an investigation on the effects of Cd doping in flux-grown single crystals of the complex intermetallic cage compound YbFe2Zn20, which has been described as a heavy fermion with a Sommerfeld coefficient of 535 mJ mol-1 · K-2. The substitution of Cd for Zn disturbs the system by expanding the unit cell and, in this case, the size of the Zn cages that surround the Yb and Fe. With an increasing amount of Cd, the hybridization between the Yb 4f electrons and the conduction electrons is weakened, as shown by a decrease in the Sommerfeld coefficient, which should be accompanied by a valence shift of the Yb3+ due to the negative chemical pressure effect. This scenario is also supported by the low temperature DC magnetic susceptibility, which is gradually suppressed and shows an increment of the Kondo temperature, based on a shift to higher temperatures of the characteristic broad susceptibility peak. Furthermore, the DC resistivity decreases with the isoelectronic substitution of Cd for Zn, contrary to expectations in an increasingly disordered system, and implying that the valence shift is not related to charge carrier doping. The combined results demonstrate the excellent complementarity between positive physical pressure and negative chemical pressure, and point to a rich playground for exploring the physics and chemistry of strongly correlated electron systems in the general family of Zn20 compounds, despite their structural complexity.

Study on the adsorption properties of O{sub 3}, SO{sub 2}, and SO{sub 3} on B-doped graphene using DFT calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rad, Ali Shokuhi, E-mail: a.shokuhi@gmail.com; Shabestari, Sahand Sadeghi; Mohseni, Soheil

2016-05-15

We investigated the structure, adsorption, electronic states, and charge transfer of O{sub 3}, SO{sub 2} and SO{sub 3} molecules on the surface of a B-doped graphene using density functional theory (DFT). We found weak physisorption of SO{sub 2} (−10.9 kJ/mole, using B3LYP-D) and SO{sub 3} (−15.7 kJ/mole, using B3LYP-D) on the surface of B-doped graphene while there is strong chemisorption for O{sub 3} (−96.3 kJ/mole, using B3LYP-D ) on this surface. Our results suggest the potential of B-doped graphene as a selective sensor/adsorbent for O{sub 3} molecule. We noticed some change in hybridizing of boron from sp{sup 2} to sp{supmore » 3} upon adsorption of O{sub 3} which cases transformation of the adsorbent from 2D to 3D. - Graphical abstract: The electronic property of B-doped graphene is responsible to highly adsorption of O{sub 3} molecules while the adsorption of SO{sub 2} and SO{sub 3} molecules on this surface exhibits only a weak interaction. - Highlights: • B-doped graphene clearly is n-type semiconductor. • High negatively charge of C-atoms neighboring the boron dopant. • Chemisorption of O{sub 3} and physisorption of SO{sub 2} and SO{sub 3} on the surface of B-doped graphene.« less

Anabolic agents: recent strategies for their detection and protection from inadvertent doping

PubMed Central

Geyer, Hans; Schänzer, Wilhelm; Thevis, Mario

2014-01-01

According to the World Anti-Doping Agency (WADA) Prohibited List, anabolic agents consist of exogenous anabolic androgenic steroids (AAS), endogenous AAS and other anabolic agents such as clenbuterol and selective androgen receptor modulators (SARMs). Currently employed strategies for their improved detection include the prolongation of the detection windows for exogenous AAS, non-targeted and indirect analytical approaches for the detection of modified steroids (designer steroids), the athlete’s biological passport and isotope ratio mass spectrometry for the detection of the misuse of endogenous AAS, as well as preventive doping research for the detection of SARMs. The recent use of these strategies led to 4–80-fold increases of adverse analytical findings for exogenous AAS, to the detection of the misuse of new designer steroids, to adverse analytical findings of different endogenous AAS and to the first adverse analytical findings of SARMs. The strategies of the antidoping research are not only focused on the development of methods to catch the cheating athlete but also to protect the clean athlete from inadvertent doping. Within the past few years several sources of inadvertent doping with anabolic agents have been identified. Among these are nutritional supplements adulterated with AAS, meat products contaminated with clenbuterol, mycotoxin (zearalenone) contamination leading to zeranol findings, and natural products containing endogenous AAS. The protection strategy consists of further investigations in case of reasonable suspicion of inadvertent doping, publication of the results, education of athletes and development of methods to differentiate between intentional and unintentional doping. PMID:24632537

Plasmonic doped semiconductor nanocrystals: Properties, fabrication, applications and perspectives

NASA Astrophysics Data System (ADS)

Kriegel, Ilka; Scotognella, Francesco; Manna, Liberato

2017-02-01

Degenerately doped semiconductor nanocrystals (NCs) are of recent interest to the NC community due to their tunable localized surface plasmon resonances (LSPRs) in the near infrared (NIR). The high level of doping in such materials with carrier densities in the range of 1021cm-3 leads to degeneracy of the doping levels and intense plasmonic absorption in the NIR. The lower carrier density in degenerately doped semiconductor NCs compared to noble metals enables LSPR tuning over a wide spectral range, since even a minor change of the carrier density strongly affects the spectral position of the LSPR. Two classes of degenerate semiconductors are most relevant in this respect: impurity doped semiconductors, such as metal oxides, and vacancy doped semiconductors, such as copper chalcogenides. In the latter it is the density of copper vacancies that controls the carrier concentration, while in the former the introduction of impurity atoms adds carriers to the system. LSPR tuning in vacancy doped semiconductor NCs such as copper chalcogenides occurs by chemically controlling the copper vacancy density. This goes in hand with complex structural modifications of the copper chalcogenide crystal lattice. In contrast the LSPR of degenerately doped metal oxide NCs is modified by varying the doping concentration or by the choice of host and dopant atoms, but also through the addition of capacitive charge carriers to the conduction band of the metal oxide upon post-synthetic treatments, such as by electrochemical- or photodoping. The NIR LSPRs and the option of their spectral fine-tuning make accessible important new features, such as the controlled coupling of the LSPR to other physical signatures or the enhancement of optical signals in the NIR, sensing application by LSPR tracking, energy production from the NIR plasmon resonance or bio-medical applications in the biological window. In this review we highlight the recent advances in the synthesis of various different plasmonic semiconductor NCs with LSPRs covering the entire spectral range, from the mid- to the NIR. We focus on copper chalcogenide NCs and impurity doped metal oxide NCs as the most investigated alternatives to noble metals. We shed light on the structural changes upon LSPR tuning in vacancy doped copper chalcogenide NCs and deliver a picture for the fundamentally different mechanism of LSPR modification of impurity doped metal oxide NCs. We review on the peculiar optical properties of plasmonic degenerately doped NCs by highlighting the variety of different optical measurements and optical modeling approaches. These findings are merged in an exhaustive section on new and exciting applications based on the special characteristics that plasmonic semiconductor NCs bring along.

Magnetic properties of Mn-doped GaN with defects: ab-initio calculations

NASA Astrophysics Data System (ADS)

Salmani, E.; Benyoussef, A.; Ez-Zahraouy, H.; H. Saidi, E.

2011-08-01

According to first-principles density functional calculations, we have investigated the magnetic properties of Mn-doped GaN with defects, Ga1-x-yVGxMny N1-z-tVNzOt with Mn substituted at Ga sites, nitrogen vacancies VN, gallium vacancies VG and oxygen substituted at nitrogen sites. The magnetic interaction in Mn-doped GaN favours the ferromagnetic coupling via the double exchange mechanism. The ground state is found to be well described by a model based on a Mn3+-d5 in a high spin state coupled via a double exchange to a partially delocalized hole accommodated in the 2p states of neighbouring nitrogen ions. The effect of defects on ferromagnetic coupling is investigated. It is found that in the presence of donor defects, such as oxygen substituted at nitrogen sites, nitrogen vacancy antiferromagnetic interactions appear, while in the case of Ga vacancies, the interactions remain ferromagnetic; in the case of acceptor defects like Mg and Zn codoping, ferromagnetism is stabilized. The formation energies of these defects are computed. Furthermore, the half-metallic behaviours appear in some studied compounds.

Numerical analysis of lasing characteristics in highly bend-compensated large-mode-area ytterbium-doped double-clad leakage channel fibers.

PubMed

Thavasi Raja, G; Halder, Raktim; Varshney, S K

2015-12-10

The bend-induced mode-area reduction and thermal effects are vital factors that affect the power scaling of fiber lasers. Recently, bend-compensated large-mode-area double-clad modified hybrid leakage channel fiber (M-HLCF) has been reported with a mode area greater than 1000  μm, while sustaining the single-mode behavior at 1064 nm for high-temperature environments. In this work, the lasing characteristics of a newly designed ytterbium-doped double-clad M-HLCF (YDMHLCF) have been numerically investigated for strongly pumped conditions. The doped region size is optimally found through simulations, equivalent to the size of core diameter ∼38  μm in order to achieve maximum conversion efficiency for the bent and straight cases. Numerical simulations further confirm that a 2 m long YDMHLCF exhibits slope efficiency of 78% and conversion efficiency of 79% for the straight case and also almost the same for the practical bending radius of 7.5 cm when pumped with a 975 nm laser source.

Exchange Enhancement of the Electron-Phonon Interaction: The Case of Weakly Doped Two-Dimensional Multivalley Semiconductors

NASA Astrophysics Data System (ADS)

Pamuk, Betül; Zoccante, Paolo; Baima, Jacopo; Mauri, Francesco; Calandra, Matteo

2018-04-01

The effect of the exchange interaction on the vibrational properties and on the electron-phonon coupling were investigated in several recent works. In most of the cases, exchange tends to enhance the electron-phonon interaction, although the motivations for such behaviour are not completely understood. Here we consider the class of weakly doped two-dimensional multivalley semiconductors and we demonstrate that a more global picture emerges. In particular we show that in these systems, at low enough doping, even a moderate electron-electron interaction enhances the response to any perturbation inducing a valley polarization. If the valley polarization is due to the electron-phonon coupling, the electron-electron interaction results in an enhancement of the superconducting critical temperature. We demonstrate the applicability of the theory by performing random phase approximation and first principles calculations in transition metal chloronitrides. We find that exchange is responsible for the enhancement of the superconducting critical temperature in LixZrNCl and that much larger Tcs could be obtained in intercalated HfNCl if the synthesis of cleaner samples could remove the Anderson insulating state competing with superconductivity.

Development and characterization of camphor sulphonic acid doped polyaniline film with broadband negative dielectric constant for microwave applications

NASA Astrophysics Data System (ADS)

Sreekala, P. S.; Honey, John; Aanandan, C. K.

2018-05-01

In this communication, the broadband artificial dielectric plasma behavior of Camphor Sulphonic acid doped Polyaniline (PANI-CSA) film at microwave frequencies is experimentally verified. The fabricated PANI-CSA films have been experimentally characterized by rectangular wave guide measurements for a broad range of frequencies within the X band and the effective material parameters, skin depth and conductivity have been extracted from the scattering parameters. Since most of the artificial materials available today are set up by consolidating two structured materials which independently demonstrates negative permittivity and negative permeability, this open another strategy for creation of compact single negative materials for microwave applications. The proposed doping can shift the double positive material parameter of the sample to single negative in nature.

Comparative study of Ni and Cu doped ZnO nanoparticles: Structural and optical properties

NASA Astrophysics Data System (ADS)

Thakur, Shaveta; Thakur, Samita; Sharma, Jyoti; Kumar, Sanjay

2018-05-01

Nanoparticles of undoped and doped (0.1 M Ni2+ and Cu2+) ZnO are synthesized using chemical precipitation method. The crystallite size, morphology, chemical bonding and optical properties of as prepared nanoparticles are determined by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) spectroscopy and UV-visible spectra. XRD analysis shows that the prepared samples are single phase and have hexagonal wurtzite structure. The crystallite size of the doped and undoped nanoparticles is determined using Scherrer method. The crystallite size is found to be increased with concentration of nickel and copper. All stretching and vibrational bands are observed at their specific positions through FTIR. The increase in band gap can be attributed to the different chemical nature of dopant and host cation.

Rectification induced in N2AA-doped armchair graphene nanoribbon device

NASA Astrophysics Data System (ADS)

Chen, Tong; Li, Xiao-Fei; Wang, Ling-Ling; Luo, Kai-Wu; Xu, Liang

2014-07-01

By using non-equilibrium Green function formalism in combination with density functional theory, we investigated the electronic transport properties of armchair graphene nanoribbon devices in which one lead is undoped and the other is N2AA-doped with two quasi-adjacent substitutional nitrogen atoms incorporating pairs of neighboring carbon atoms in the same sublattice A. Two kinds of N2AA-doped style are considered, for N dopants substitute the center or the edge carbon atoms. Our results show that the rectification behavior with a large rectifying ratio can be found in these devices and the rectifying characteristics can be modulated by changing the width of graphene nanoribbons or the position of the N2AA dopant. The mechanisms are revealed to explain the rectifying behaviors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Xiaochen; Singh, Arunima K.; Fang, Lei

Impurity doping in two-dimensional (2D) materials can provide a route to tuning electronic properties, so it is important to be able to determine the distribution of dopant atoms within and between layers. Here we report the totnographic mapping of dopants in layered 2D materials with atomic sensitivity and subnanometer spatial resolution using atom, probe tomography (APT). Also, APT analysis shows that Ag dopes both Bi 2Se 3 and PbSe layers in (PbSe) 5(Bi 2Se 3) 3, and correlations :in the position of Ag atoms suggest a pairing across neighboring Bi 2Se 3 and PbSe layers. Finally, density functional theory (DFT)more » calculations confirm the favorability of substitutional-doping for both Pb and Bi and provide insights into the,observed spatial correlations in dopant locations.« less

Superconductivity in Doped sp3 Semiconductors: The Case of the Clathrates

NASA Astrophysics Data System (ADS)

Connétable, D.; Timoshevskii, V.; Masenelli, B.; Beille, J.; Marcus, J.; Barbara, B.; Saitta, A. M.; Rignanese, G.-M.; Mélinon, P.; Yamanaka, S.; Blase, X.

2003-12-01

We present a joint experimental and theoretical study of the superconductivity in doped silicon clathrates. The critical temperature in Ba8@Si-46 is shown to strongly decrease with applied pressure. These results are corroborated by ab initio calculations using MacMillan's formulation of the BCS theory with the electron-phonon coupling constant λ calculated from perturbative density functional theory. Further, the study of I8@Si-46 and of gedanken pure silicon diamond and clathrate phases doped within a rigid-band approach show that the superconductivity is an intrinsic property of the sp3 silicon network. As a consequence, carbon clathrates are predicted to yield large critical temperatures with an effective electron-phonon interaction much larger than in C60.

Neodymium-doped nanoparticles for infrared fluorescence bioimaging: The role of the host

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rosal, Blanca del; Pérez-Delgado, Alberto; Rocha, Ueslen

2015-10-14

The spectroscopic properties of different infrared-emitting neodymium-doped nanoparticles (LaF{sub 3}:Nd{sup 3+}, SrF{sub 2}:Nd{sup 3+}, NaGdF{sub 4}: Nd{sup 3+}, NaYF{sub 4}: Nd{sup 3+}, KYF{sub 4}: Nd{sup 3+}, GdVO{sub 4}: Nd{sup 3+}, and Nd:YAG) have been systematically analyzed. A comparison of the spectral shapes of both emission and absorption spectra is presented, from which the relevant role played by the host matrix is evidenced. The lack of a “universal” optimum system for infrared bioimaging is discussed, as the specific bioimaging application and the experimental setup for infrared imaging determine the neodymium-doped nanoparticle to be preferentially used in each case.

αTCP ceramic doped with dicalcium silicate for bone regeneration applications prepared by powder metallurgy method: in vitro and in vivo studies.

PubMed

Velasquez, Pablo; Luklinska, Zofia B; Meseguer-Olmo, Luis; Mate-Sanchez de Val, Jose E; Delgado-Ruiz, Rafael A; Calvo-Guirado, Jose L; Ramirez-Fernandez, Ma P; de Aza, Piedad N

2013-07-01

This study reports on the in vitro and in vivo behavior of α-tricalcium phosphate (αTCP) and also αTCP doped with either 1.5 or 3.0 wt % of dicalcium silicate (C2 S). The ceramics were successfully prepared by powder metallurgy method combined with homogenization and heat treatment procedures. All materials were composed of a single-phase, αTCP in the case of a pure material, or solid solution of C2 S in αTCP for the doped αTCP, which were stable at room temperature. The ceramics were tested for bioactivity in simulated body fluid, cell culture medium containing adult mesenchymal stem cells of human origin, and in animals. Analytical scanning electron microscopy combined with chemical elemental analysis was used and Fourier transform infrared and conventional histology methods. The in vivo behavior of the ceramics matched the in vitro results, independently of the C2 S content in αTCP. Carbonated hydroxyapatite (CHA) layer was formed on the surface and within the inner parts of the specimens in all cases. A fully mineralized new bone growing in direct contact with the implants was found under the in vivo conditions. The bioactivity and biocompatibility of the implants increased with the C2 S content in αTCP. The C2 S doped ceramics also favoured a phase transformation of αTCP into CHA, important for full implant integration during the natural bone healing processes. αTCP ceramic doped with 3.0 wt % C2 S showed the best bioactive in vitro and in vivo properties of all the compositions and hence could be of interest in specific applications for bone restorative purposes. Copyright © 2012 Wiley Periodicals, Inc.

Systematic approach on the fabrication of Co doped ZnO semiconducting nanoparticles by mixture of fuel approach for Antibacterial applications

NASA Astrophysics Data System (ADS)

Rajendar, V.; Dayakar, T.; Shobhan, K.; Srikanth, I.; Venkateswara Rao, K.

2014-11-01

Zinc oxide (ZnO) is a wide band gap semiconductor (3.2 eV) with a high exciton binding energy (60 meV), where it has wide applications in advanced spintronic devices. The theoretical prediction of room temperature ferromagnetism and also antibacterial activity will be possible through the investigation of diluted magnetic semiconductors (DMS), such as transition metal doped ZnO, especially Cobalt doped ZnO. The aim of the work is the synthesis of Cobalt (Co) doped ZnO nanopowders were prepared Zn1-xCoxO (0 ⩽ x ⩾ 0.09) nanopowders from Sol-Gel auto combustion method have been synthesized with precursors such as Zinc and Cobalt nitrates with the assistance Ammonium acetate & Urea as fuel by increasing the cobalt concentration in zinc oxide and their structural, morphological, optical, Thermal, magnetic and antibacterial properties were studied by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), Transmission Electron microscope (TEM), UV-visible spectroscopy, thermo gravimetric/differential thermal analysis (TG/DTA) and vibrating sample magneto meter (VSM). From the antibacterial studies, against gram positive Bacillus subtilis bacteria is most abundant bacteria in soil and indoor atmosphere, which affects the stored spintronic devices so that the devices should be made with antibacterial activity of DMS like Co doped ZnO. In this article is found that ZnO:Co nanopowders with higher Co doping level (0.07 and 0.09 wt%) exhibit good antibacterial efficiency. The magnetization curves obtained using vibrating sample magnetometer (VSM) show a sign of strong room temperature ferromagnetic behavior when the Co doping level is 0.05 wt% and a weak room temperature ferromagnetic behavior Co doping level is below 0.07 wt%, and also they found to exhibit antiferromagnetic and paramagnetic properties, when the Co doping levels are 0.07 and 0.09 wt%, respectively, to enhance and increase the special magnetic and antibacterial property for sophisticated devices for the sustainable technologies.

Unraveling the impact of hydroxylation on interactions of bile acid cationic lipids with model membranes by in-depth calorimetry studies.

PubMed

Singh, Manish; Bajaj, Avinash

2014-09-28

We used eight bile acid cationic lipids differing in the number of hydroxyl groups and performed in-depth differential scanning calorimetry studies on model membranes doped with different percentages of these cationic bile acids. These studies revealed that the number and positioning of free hydroxyl groups on bile acids modulate the phase transition and co-operativity of membranes. Lithocholic acid based cationic lipids having no free hydroxyl groups gel well with dipalmitoylphosphatidylcholine (DPPC) membranes. Chenodeoxycholic acid lipids having one free hydroxyl group at the 7'-carbon position disrupt the membranes and lower their co-operativity. Deoxycholic acid and cholic acid based cationic lipids have free hydroxyl groups at the 12'-carbon position, and at 7'- and 12'-carbon positions respectively. Doping of these lipids at high concentrations increases the co-operativity of membranes suggesting that these lipids might induce self-assembly in DPPC membranes. These different modes of interactions between cationic lipids and model membranes would help in future for exploring their use in DNA/drug delivery.

Effect of (Mn,Cr) co-doping on structural, electronic and magnetic properties of zinc oxide by first-principles studies

NASA Astrophysics Data System (ADS)

Aimouch, D. E.; Meskine, S.; Boukortt, A.; Zaoui, A.

2018-04-01

In this study, structural, electronic and magnetic properties of Mn doped (ZnO:Mn) and (Mn,Cr) co-doped zinc oxide (ZnO:(Mn,Cr)) have been calculated with the FP-LAPW method by using the LSDA and LSDA+U approximations. Going through three configurations of Mn,Cr co-doped ZnO corresponding to three different distances between manganese and chromium, we have analyzed that ZnO:(Mn,Cr) system is more stable in its preferred configuration2. The lattice constant of undoped ZnO that has been calculated in this study is in a good agreement with the experimental and theoretical values. It was found to be increased by doping with Mn or (Mn,Cr) impurities. The band structure calculations showed the metallic character of Mn doped and Mn,Cr co-doped ZnO. As results, by using LSDA+U (U = 6eV), we show the half-metallic character of ZnO:Mn and ZnO:Mn,Cr. We present the calculated exchange couplings d-d of Mn doped ZnO which is in a good agreement with the former FPLO calculation data and the magnetization step measurement of the experimental work. The magnetic coupling between neighboring Mn impurities in ZnO is found to be antiferromagnetic. In the case of (Mn,Cr) co-doped ZnO, the magnetic coupling between Mn and Cr impurities is found to be antiferromagnetic for configuration1 and 3, and ferromagnetic for configuration2. Thus, the ferromagnetic coupling is weak in ZnO:Mn. Chromium co-doping greatly enhance the ferromagnetism, especially when using configuration2. At last, we present the 2D and 3D spin-density distribution of ZnO:Mn and ZnO:(Mn,Cr) where the ferromagnetic state in ZnO:(Mn,Cr) comes from the strong p-d and d-d interactions between 2p-O, 3d-Mn and 3d-Cr electrons. The results of our calculations suggest that the co-doping ZnO(Mn, Cr) can be among DMS behavior for spintronic applications.

Determination of designer doping agent--2-ethylamino-1-phenylbutane--in dietary supplements and excretion study following single oral supplement dose.

PubMed

Wójtowicz, Marzena; Jarek, Anna; Chajewska, Katarzyna; Turek-Lepa, Ewa; Kwiatkowska, Dorota

2015-11-10

The quantitative analysis of a new designer doping agent, 2-ethylamino-1-phenylbutane (EAPB) and its metabolite, 2-amino-1-phenylbutane (APB) in urine samples, and the determination of EAPB in dietary supplement samples, have been presented. The main purpose of the present study was to develop simple and reliable gas chromatography-mass spectrometry method (GC-MS) for excretion study following a single oral administration of dietary supplements containing EAPB. Three analytical methods for the determination of EAPB in urine and supplement samples, and APB in urine samples using the GC-MS system, have been validated. The method of the determination of EAPB in supplement samples was applied to analyze seventeen dietary supplements, CRAZE and DETONATE. Two other methods were used to determine the urinary excretion profile of EAPB and APB in the case of three healthy volunteers and, on further investigation, it was applied to the anti-doping control in sport. Quantification was obtained on the basis of the ions at m/z 86, 58 and 169, monitored for EAPB, APB and diphenylamine (used as an internal standard), respectively. The limits of detection and quantification were 2.4 and 7.3μg/g for EAPB in the case of supplement analysis, 2.9 and 8.8ng/mL for EAPB in the case of urine analysis, and 3.2 and 9.7ng/mL for APB. The other validation parameters as linearity, precision and trueness have been also investigated with the acceptable results. The extraction yield of all presented methods was above 69%. EAPB was detected in fourteen analyzed supplements (not included EAPB in their labels) and its content varied between 1.8 and 16.1mg/g. Following oral administration of three supplements with EAPB to one male and two female volunteers, the parent compound of EAPB and its metabolite were monitored and the excretion parameters as the maximum concentration of the analyte in urine (2.2-4.2μg/mL for EAPB; 1.1-5.1μg/mL for APB) and the time for the maximum height of the excretion peak (2-8h and 22h in one case for EAPB; 20-22h and 4h in one case for APB) have been indicated. EAPB and APB were detected at the level above 50ng/mL (50% of the minimum required performance level for stimulants in the anti-doping control in-competition in sport) in the urine up to 46-106h and 58-120h, respectively. Additionally, the result of the anti-doping control during swimming competition of one athlete, whose urine sample was analyzed for stimulants and narcotics, has been presented. The qualitative and quantitative analyses of new designer agents in urine samples and the excretion studies of these substances are of a great importance in the anti-doping control in sport. Moreover, the presentation of detection examples of these agents in supplements that haven't got included an information about them in the labeling, make athletes (and other supplement customers) more and more aware of the risk of the supplement use and possible health and doping consequences. Copyright © 2015 Elsevier B.V. All rights reserved.

Ferroelectricity of Sn-doped SrTiO3 perovskites with tin at both A and B sites

NASA Astrophysics Data System (ADS)

Suzuki, Shoichiro; Honda, Atsushi; Iwaji, Naoki; Higai, Shin'ichi; Ando, Akira; Takagi, Hiroshi; Kasatani, Hirofumi; Deguchi, Kiyoshi

2012-08-01

We successfully obtained Sn-doped SrTiO3 (SSTO) perovskites, and clarified their ferroelectricity and structural properties by using first-principles theoretical calculations. The ferroelectricity of SSTO was confirmed by the appearance of a dielectric permittivity maximum and a clear hysteresis loop of the relationship between the external electric field and the electric flux density below 180 K. X-ray diffraction and Raman spectra revealed the structural phase transition of SSTO at approximately 200 K. We directly observed by spherical aberration corrected scanning transmission electron microscopy with energy-dispersive x-ray spectroscopy that Sn ions are doped into both Sr and Ti sites (SnA and SnB), and that SnA is located at an off-centered position. We also performed theoretical analyses of SSTO and related perovskites, and found that SnA is preferentially located in an off-centered position and that SnA and the O6 octahedron, which includes SnB in its center, oscillate along the antiphase direction in the soft mode. Thus, we propose that the ferroelectricity of SSTO originates from the antiphase off-centering, which induces ferroelectric nanoregions in paraelectric SrTiO3.

Effect of B, N, Ge, Sn, K doping on electronic-transport properties of (5, 0) zigzag carbon nanotube

NASA Astrophysics Data System (ADS)

Kamalian, Monir; Seyed Jalili, Yousef; Abbasi, Afshin

2018-04-01

In this paper the effect of impurity on the electronic properties and quantum conductance of zigzag (5, 0) carbon nanotube have been studied by using the Density Functional Theory (DFT) combined with Non-Equilibrium Green’s Function (NEGF) formalism with TranSIESTA software. The effect of Boron (B), Nitrogen (N), Germanium (Ge), Tin (Sn) and Potassium (K) impurities on the CNT conduction behavior and physical characteristics, like density of states (DOS), band structure, transmission coefficients and quantum conductance was considered and discussed simultaneously. The current‑voltage (I‑V) curves of all the proposed models were studied for comparative study under low-bias conditions. The distinct changes in conductance reported as the positions, number and type of dopants was varied in central region of the CNT between two electrodes at different bias voltages. This suggested conductance enhancement mechanism for the charge transport in the doped CNT at different positions is important for the design of CNT based nanoelectronic devices. The results show that Germanium, Tin and Potassium dopant atoms has increased the conductance of the model manifold than other doping atoms furthermore 10 Boron and 10 Nitrogen dopant atoms showed the amazing property of Negative Differential Resistance (NDR).

Exploring DC-Kerr effect of impurity doped quantum dots under the aegis of noise

NASA Astrophysics Data System (ADS)

Arif, Sk. Md.; Bera, Aindrila; Ghosh, Anuja; Ghosh, Manas

2018-02-01

Present study performs an extensive exploration of the profiles of DC-Kerr effect (DCKE) of doped GaAs quantum dot (QD) under the control of Gaussian white noise. A large number of important physical parameters have been varied over a range and the resultant changes in the DCKE profiles have been thoroughly analyzed. The said physical parameters comprise of electric field, magnetic field, confinement potential, dopant location, dopant potential, noise strength, aluminium concentration (only for Alx Ga1 - x As alloy QD), carrier density, relaxation time, position-dependent effective mass (PDEM), position-dependent dielectric screening function (PDDSF), anisotropy, hydrostatic pressure (HP) and temperature. The particular physical quantity being varied, presence of noise and its pathway of application, in combination, lead to emergence of diverse features in the DCKE profiles. As a technologically significant aspect we often find maximization of DCKE for some typical combinations as mentioned above. Presence of multiplicative noise, in general, causes greater shift and greater augmentation of DCKE profiles from a noise-free condition than its additive counterpart. The outcomes of the study indicate ample scope of tailoring DCKE of doped QD systems in presence of noise by minute adjustment of several control parameters.

On the photo-luminescence properties of sol–gel derived undoped and Dy{sup 3+} ion doped nanocrystalline Scheelite type AMoO{sub 4} (A = Ca, Sr and Ba)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jena, Paramananda; Gupta, Santosh K., E-mail: santufrnd@gmail.com; Natarajan, V.

2015-04-15

Nanocrystalline Scheelite type Dy doped AMoO{sub 4} [where A = Ba, Sr and Ca] samples were prepared by acrylamide assisted sol–gel process and characterized by XRD, FT-Raman, FTIR, SEM and photoluminescence (PL). PL of undoped sample shows blue/green emission in CaMoO{sub 4} and SrMoO{sub 4} but multicolour visible emission leading to near white light in BaMoO{sub 4} nanoparticles; the origin of which is explained. It was observed that on doping 0.5 mol% of Dy{sup 3+} in molybdate samples complete energy transfer takes place in case of SrMoO{sub 4} and BaMoO{sub 4}, but host contributed substantially in Dy doped BaMoO{sub 4}more » sample, resulting in biexponential decay. It was also observed that symmetry around Dy{sup 3+} decreases as the size of alkaline earth ion increases. Due to combined blue, yellow and red colour emission in dysprosium doped sample; all samples showed near white light emission under UV and near UV excitation.« less

Continuous-flow extraction system for elemental association study: a case of synthetic metal-doped iron hydroxide.

PubMed

Hinsin, Duangduean; Pdungsap, Laddawan; Shiowatana, Juwadee

2002-12-06

A continuous-flow extraction system originally developed for sequential extraction was applied to study elemental association of a synthetic metal-doped amorphous iron hydroxide phase. The homogeneity and metal association of the precipitates were evaluated by gradual leaching using the system. Leachate was collected in fractions for determination of elemental concentrations. The result obtained as extractograms indicated that the doped metals were adsorbed more on the outermost surface rather than homogeneously distributed in the precipitates. The continuous-flow extraction method was also used for effective removal of surface adsorbed metals to obtain a homogeneous metal-doped synthetic iron hydroxide by a sequential extraction using acetic acid and small volume of hydroxylamine hydrochloride solution. The system not only ensures complete washing, but the extent of metal immobilization in the synthetic iron hydroxide could be determined with high accuracy from the extractograms. The initial metal/iron mole ratio (M/Fe) in solution affected the M/Fe mole ratio in homogeneous doped iron hydroxide phase. The M/Fe mole ratio of metal incorporation was approximately 0.01-0.02 and 0.03-0.06, for initial solution M/Fe mole ratio of 0.025 and 0.100, respectively.

Anomalous electron doping independent two-dimensional superconductivity

NASA Astrophysics Data System (ADS)

Zhou, Wei; Xing, Xiangzhuo; Zhao, Haijun; Feng, Jiajia; Pan, Yongqiang; Zhou, Nan; Zhang, Yufeng; Qian, Bin; Shi, Zhixiang

2017-07-01

Transition metal (Co and Ni) co-doping effects are investigated on an underdoped Ca0.94La0.06Fe2As2 compound. It is discovered that electron doping from substituting Fe with transition metal (TM = Co, Ni) can trigger high-{T}{{c}} superconductivity around 35 K, which emerges abruptly before the total suppression of the innate spin-density-wave/anti-ferromagnetism (SDW/AFM) state. Remarkably, the critical temperature for the high-{T}{{c}} superconductivity remains constant against a wide range of TM doping levels. And the net electron doping density dependence of the superconducting {T}{{c}} based on the rigid band model can be nicely scaled into a single curve for Co and Ni substitutions, in stark contrast to the case of Ba(Fe1-x TM x )2As2. This carrier density independent superconductivity and the unusual scaling behavior are presumably resulted from the interface superconductivity based on the similarity with the interface superconductivity in a La2-x Sr x CuO4-La2CuO4 bilayer. Evidence of the two-dimensional character of the superfluid by angle-resolved magneto-resistance measurements can further strengthen the interface nature of the high-{T}{{c}} superconductivity.

Defect phase diagram for doping of Ga2O3

NASA Astrophysics Data System (ADS)

Lany, Stephan

2018-04-01

For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn), a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T), O partial pressures (pO2), and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor) center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association of dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO2) conditions. Considering further the stability constraints due to sublimation of molecular Ga2O, specific predictions of optimized pO2 and Si dopant concentrations are given. The incomplete passivation of dopant-defect complexes in β-Ga2O3 suggests a design rule for metastable doping above the solubility limit.

Successes and failures of Hubbard-corrected density functional theory. The case of Mg doped LiCoO 2

DOE PAGES

Santana Palacio, Juan A.; Kim, Jeongnim; Kent, Paul R.; ...

2014-10-28

We have evaluated the successes and failures of the Hubbard-corrected density functional theory approach to study Mg doping of LiCoO 2. We computed the effect of the U parameter on the energetic, geometric, and electronic properties of two possible doping mechanisms: (1) substitution of Mg onto a Co (or Li) site with an associated impurity state and (2) formation of impurity-state-free complexes of substitutional Mg and point defects in LiCoO 2. We find that formation of impurity states results in changes on the valency of Co in LiCoO 2. Variation of the Co U shifts the energy of the impuritymore » state, resulting in energetic, geometric, and electronic properties that depend significantly on the specific value of U. In contrast, the properties of the impurity-state-free complexes are insensitive to U. These results identify reasons for the strong dependence on the doping properties on the chosen value of U and for the overall difficulty of achieving agreement with the experimentally known energetic and electronic properties of doped transition metal oxides such as LiCoO 2.« less

Mesoporous nanostructured Nb-doped titanium dioxide microsphere catalyst supports for PEM fuel cell electrodes.

PubMed

Chevallier, Laure; Bauer, Alexander; Cavaliere, Sara; Hui, Rob; Rozière, Jacques; Jones, Deborah J

2012-03-01

Crystalline microspheres of Nb-doped TiO(2) with a high specific surface area were synthesized using a templating method exploiting ionic interactions between nascent inorganic components and an ionomer template. The microspheres exhibit a porosity gradient, with a meso-macroporous kernel, and a mesoporous shell. The material has been investigated as cathode electrocatalyst support for polymer electrolyte membrane (PEM) fuel cells. A uniform dispersion of Pt particles on the Nb-doped TiO(2) support was obtained using a microwave method, and the electrochemical properties assessed by cyclic voltammetry. Nb-TiO(2) supported Pt demonstrated very high stability, as after 1000 voltammetric cycles, 85% of the electroactive Pt area remained compared to 47% in the case of commercial Pt on carbon. For the oxygen reduction reaction (ORR), which takes place at the cathode, the highest stability was again obtained with the Nb-doped titania-based material even though the mass activity calculated at 0.9 V vs RHE was slightly lower. The microspherical structured and mesoporous Nb-doped TiO(2) is an alternative support to carbon for PEM fuel cells. © 2012 American Chemical Society

The effect of gap fluctuations on interacting and non-interacting polarization for nano-superconducting grains in electron- and hole-doped cuprates

NASA Astrophysics Data System (ADS)

Afzali, R.; Alizadeh, A.

2017-12-01

The behavior of non-interacting and interacting polarization under influence of fluctuations of the superconducting gap with D-wave symmetry and under consideration of the gap dependence on nano- grain size is obtained in terms of the frequency, temperature and the size at zero and finite temperatures for rectangular cuprate nano-superconducting grains. By using Eliashberg equations and applying the relations of the fermionic dispersion for the hole-doped and electron-doped cuprates, we numerically compute the real part of size-dependent polarization for both types of cuprates. We show that the peak of real part of polarization moves to higher frequency by including the additional fluctuating part of gap (or the nano-size effect). Also, we obtain the temperatures for different frequencies, in which the effect of gap fluctuations fades. In the case of size-dependent gap, there is a critical frequency; for frequencies lower (higher) than the critical frequency, the nano-effect weakens (improves) the superconducting state. Moreover, it is concluded that the real part of polarization for hole- doped cuprates in terms of the grain size has more significant amount in comparison with electron-doped ones.

Ce Core-Level Spectroscopy, and Magnetic and Electrical Transport Properties of Lightly Ce-Doped YCoO3

NASA Astrophysics Data System (ADS)

Kobayashi, Yoshihiko; Koike, Tsuyoshi; Okawa, Mario; Takayanagi, Ryohei; Takei, Shohei; Minohara, Makoto; Kobayashi, Masaki; Horiba, Koji; Kumigashira, Hiroshi; Yasui, Akira; Ikenaga, Eiji; Saitoh, Tomohiko; Asai, Kichizo

2016-11-01

We have investigated the Ce and Co core level spectroscopy, and the magnetic and electrical transport properties of lightly Ce-doped YCoO3. We have successfully synthesized single-phase Y1-xCexCoO3 for 0.0 ≤ x ≤ 0.1 by the sol-gel method. Hard X-ray photoelectron and X-ray absorption spectroscopy experiments reveal that the introduced Ce ions are tetravalent, which is considered to be the first case of electron doping into bulk trivalent Co oxides with perovskite RECoO3 (RE: rare-earth element or Y) caused by RE site substitution. The magnitude of the effective magnetic moment peff obtained from the temperature dependence of magnetic susceptibility χ(T) at higher temperatures is close to that for high-spin Co2+ introduced by the Ce doping, implying that the electrons doped into the Co site induce Co2+ with a high-spin state. For x = 0.1, ferromagnetic ordering is observed below about 7 K. Electrical transport properties such as resistivity and thermoelectric power show that negative electron-like carriers are introduced by Ce substitution.

Reflective Silvered Polyimide Films Via In Situ Thermal Reduction Silver (I) Complexes

NASA Technical Reports Server (NTRS)

Southward, Robin E. (Inventor); Thompson, David W. (Inventor); St.Clair, Anne K. (Inventor); Stoakley, Diane M. (Inventor)

2000-01-01

Self-metallizing. flexible polyimide films with highly reflective surfaces are prepared by an in situ self-metallization procedure involving thermally initiated reduction of polymer-soluble silver(I) complexes. Polyamic acid solutions are doped with silver(I) acetate and solubilizing agents. Thermally curing the silver(I) doped resins leads to flexible. metallized films which have reflectivities as high as 100%. abrasion-resistant surfaces. thermal stability and, in some cases, electrical conductivity, rendering them useful for space applications.

High Average Power Raman Conversion in Diamond: ’Eyesafe’ Output and Fiber Laser Conversion

DTIC Science & Technology

2015-06-19

Eyesafe’ output and fiber laser conversion 5a. CONTRACT NUMBER FA2386-12-1-4055 5b. GRANT NUMBER Grant 12RSZ077_124055 5c. PROGRAM ELEMENT...generating 380 W was demonstrated using a 630 W Ybdoped fiber laser system. In each case the performance was unsaturated and limited by the available pump...converter for conventional high power laser technologies including Nd doped lasers and Yb-doped fiber lasers. Diamond’s power handling capability now

Diffusion, swelling, cross linkage study and mechanical properties of ZnO doped PVA/NaAlg blend polymer nanocomposite

NASA Astrophysics Data System (ADS)

Guruswamy, B.; Ravindrachary, V.; Shruthi, C.; Hegde, Shreedatta; Sagar, Rohan N.

2018-04-01

ZnO nano particles were synthesized using a chemical precipitation method. Pure and ZnO nano particle doped PVA-NaAlg blend composite films were prepared using solution casing method. Structural information of these composites was studied using FTIR. Diffusion kinetics of these polymer blend composite were studied using Flory-Huggins theory. Using these diffusion studies, cross-linking density and swelling properties of the films were analyzed. Mechanical properties of these composite are also studied.

Mitragynine (Kratom) - monitoring in sports drug testing.

PubMed

Guddat, Sven; Görgens, Christian; Steinhart, Vanessa; Schänzer, Wilhelm; Thevis, Mario

2016-11-01

In 2014, mitragynine (Kratom) was placed on the Monitoring List of the World Anti-Doping Agency to gain information of its current use in professional sports. Therefore, analytical strategies in sports drug testing are presented and the first Kratom case in professional sports is described. It is outlined that thorough monitoring by anti-doping laboratories is of utmost importance to obtain data on Kratom's misuse and to protect athletes from potential health hazards. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

Large capacitance enhancement induced by metal-doping in graphene-based supercapacitors: a first-principles-based assessment.

PubMed

Paek, Eunsu; Pak, Alexander J; Hwang, Gyeong S

2014-08-13

Chemically doped graphene-based materials have recently been explored as a means to improve the performance of supercapacitors. In this work, we investigate the effects of 3d transition metals bound to vacancy sites in graphene with [BMIM][PF6] ionic liquid on the interfacial capacitance; these results are compared to the pristine graphene case with particular attention to the relative contributions of the quantum and electric double layer capacitances. Our study highlights that the presence of metal-vacancy complexes significantly increases the availability of electronic states near the charge neutrality point, thereby enhancing the quantum capacitance drastically. In addition, the use of metal-doped graphene electrodes is found to only marginally influence the microstructure and capacitance of the electric double layer. Our findings indicate that metal-doping of graphene-like electrodes can be a promising route toward increasing the interfacial capacitance of electrochemical double layer capacitors, primarily by enhancing the quantum capacitance.

Strongly correlated superconductivity and quantum criticality

NASA Astrophysics Data System (ADS)

Tremblay, A.-M. S.

Doped Mott insulators and doped charge-transfer insulators describe classes of materials that can exhibit unconventional superconducting ground states. Examples include the cuprates and the layered organic superconductors of the BEDT family. I present results obtained from plaquette cellular dynamical mean-field theory. Continuous-time quantum Monte Carlo evaluation of the hybridization expansion allows one to study the models in the large interaction limit where quasiparticles can disappear. The normal state which is unstable to the superconducting state exhibits a first-order transition between a pseudogap and a correlated metal phase. That transition is the finite-doping extension of the metal-insulator transition obtained at half-filling. This transition serves as an organizing principle for the normal and superconducting states of both cuprates and doped organic superconductors. In the less strongly correlated limit, these methods also describe the more conventional case where the superconducting dome surrounds an antiferromagnetic quantum critical point. Sponsored by NSERC RGPIN-2014-04584, CIFAR, Research Chair in the Theory of Quantum Materials.

Hybrid density functional theory band structure engineering in hematite

NASA Astrophysics Data System (ADS)

Pozun, Zachary D.; Henkelman, Graeme

2011-06-01

We present a hybrid density functional theory (DFT) study of doping effects in α-Fe2O3, hematite. Standard DFT underestimates the band gap by roughly 75% and incorrectly identifies hematite as a Mott-Hubbard insulator. Hybrid DFT accurately predicts the proper structural, magnetic, and electronic properties of hematite and, unlike the DFT+U method, does not contain d-electron specific empirical parameters. We find that using a screened functional that smoothly transitions from 12% exact exchange at short ranges to standard DFT at long range accurately reproduces the experimental band gap and other material properties. We then show that the antiferromagnetic symmetry in the pure α-Fe2O3 crystal is broken by all dopants and that the ligand field theory correctly predicts local magnetic moments on the dopants. We characterize the resulting band gaps for hematite doped by transition metals and the p-block post-transition metals. The specific case of Pd doping is investigated in order to correlate calculated doping energies and optical properties with experimentally observed photocatalytic behavior.

On the intra- and interband plasmon modes in doped armchair graphene nanoribbons

NASA Astrophysics Data System (ADS)

Hoi, Bui Dinh; Davoudiniya, Masoumeh; Yarmohammadi, Mohsen

2018-01-01

With the help of the simple tight-binding Hamiltonian and Green's function technique, we study how intraband and interband plasmon modes of both semiconducting and metallic armchair graphene nanoribbons are influenced by the width, chemical doping, and incident momentum direction. In particular, we investigate the behavior of the frequency-dependent susceptibility when the system is exposed to photons or electrons. Injecting electrons by doping creates a new collective mode due to new states between the valence and conduction bands corresponding to intraband transition for which the effect of ribbon width on these transitions in the semiconducting case is much more sensitive than metallic ones. Furthermore, some critical chemical potential and momentum values for both intraband and interband modes lead to different behaviors for resonant peaks. Another remarkable point is the high sensitivity of intraband plasmons to the direction of incident momentum. In particular, the susceptibility of doped nanoribbons vanishes at perpendicular directions, i.e., the intraband plasmons disappear.

Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires

DOE PAGES

Sapkota, Keshab R.; Chen, Weimin; Maloney, F. Scott; ...

2016-10-14

We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior wasmore » modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. Finally, this work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smylie, M. P.; Willa, K.; Ryan, K.

Here, we report a positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator Nb 0.25Bi 2Se 3 via dc SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to reports on the homologues Cu xBi 2Se 3 and Sr xBi 2Se 3 where smooth suppression of T c is observed. This difference may be attributable to an electronic structure composed of multiple bands whereas the other materials in the superconducting doped Bi 2Se 3 family are believed to be single-band.

Nanoscale interplay of strain and doping in a high-temperature superconductor

DOE PAGES

Zeljkovic, Ilija; Gu, Genda; Nieminen, Jouko; ...

2014-11-07

The highest temperature superconductors are electronically inhomogeneous at the nanoscale, suggesting the existence of a local variable which could be harnessed to enhance the superconducting pairing. Here we report the relationship between local doping and local strain in the cuprate superconductor Bi₂Sr₂CaCu₂O₈₊ x. We use scanning tunneling microscopy to discover that the crucial oxygen dopants are periodically distributed, in correlation with local strain. Our picoscale investigation of the intra-unit-cell positions of all oxygen dopants provides essential structural input for a complete microscopic theory.

P-Doped NiCo2S4 nanotubes as battery-type electrodes for high-performance asymmetric supercapacitors.

PubMed

Lin, Jinghuang; Wang, Yiheng; Zheng, Xiaohang; Liang, Haoyan; Jia, Henan; Qi, Junlei; Cao, Jian; Tu, Jinchun; Fei, Weidong; Feng, Jicai

2018-06-19

NiCo2S4 is a promising electrode material for supercapacitors, due to its rich redox reactions and intrinsically high conductivity. Unfortunately, in most cases, NiCo2S4-based electrodes often suffer from low specific capacitance, low rate capability and fast capacitance fading. Herein, we have rationally designed P-doped NiCo2S4 nanotube arrays to improve the electrochemical performance through a phosphidation reaction. Characterization results demonstrate that the P element is successfully doped into NiCo2S4 nanotube arrays. Electrochemical results demonstrate that P-doped NiCo2S4 nanotube arrays exhibit better electrochemical performance than pristine NiCo2S4, e.g. higher specific capacitance (8.03 F cm-2 at 2 mA cm-2), good cycling stability (87.5% capacitance retention after 5000 cycles), and lower charge transfer resistance. More importantly, we also assemble an asymmetric supercapacitor using P-doped NiCo2S4 nanotube arrays and activated carbon on carbon cloth, which delivers a maximum energy density of 42.1 W h kg-1 at a power density of 750 W kg-1. These results demonstrate that the as-fabricated P-doped NiCo2S4 nanotube arrays on carbon cloth show great potential as a battery-type electrode for high-performance supercapacitors.

Composition and crystal structure of N doped TiO2 film deposited at different O2 flow rate by direct current sputtering.

PubMed

Ding, Wanyu; Ju, Dongying; Chai, Weiping

2011-06-01

N doped Ti02 films were deposited by direct current pulse magnetron sputtering system at room temperature. The influence of 02 flow rate on the crystal structure of deposited films was studied by Stylus profilometer, X-ray photoelectron spectroscopy, and X-ray diffractometer. The results indicate that the 02 flow rate strongly controls the growth behavior and crystal structure of N doped Ti02 film. It is found that N element mainly exists as substitutional doped state and the chemical stiochiometry is near to TiO1.68±0.06N0.11±0.01 for all film samples. N doped Ti02 film deposited with 2 sccm (standard-state cubic centimeter per minute) 02 flow rate is amorphous structure with high growth rate, which contains both anatase phase and rutile phase crystal nucleuses. In this case, the film displays the mix-phase of anatase and rutile after annealing treatment. While N doped Ti02 film deposited with 12 cm(3)/min 02 flow rate displays anatase phase before and after annealing treatment. And it should be noticed that no TiN phase appears for all samples before and after annealing treatment. Copyright © 2011 The Research Centre for Eco-Environmental Sciences, Chinese Academy of Sciences. Published by Elsevier B.V. All rights reserved.

Investigation into the effect on structure of oxoanion doping in Na{sub 2}M(SO{sub 4}){sub 2}·2H{sub 2}O

DOE Office of Scientific and Technical Information (OSTI.GOV)

Driscoll, L.L.; Kendrick, E.; Sharp Laboratories Europe, Oxford Science Park, Edmund Halley Road, Oxford OX4 4GB

2016-10-15

In this paper an investigation into the effect of transition metal ion and selenate/fluorophosphate doping on the structures of Na{sub 2}M(SO{sub 4}){sub 2}·2H{sub 2}O (M=transition metal) materials is reported. In agreement with previous reports, the monoclinic (Kröhnkite) structure is adopted for M=Mn, Fe, Co, Cu, while for the smallest first row divalent transition metal ion, M=Ni, the triclinic (Fairfieldite structure) is adopted. On selenate doping there is a changeover in structure from monoclinic to triclinic for M=Fe, Co, Cu, with the larger Fe{sup 2+} system requiring the highest level of selenate to complete the changeover. Thus the results suggest thatmore » the relative stability of the two structure types is influenced by the relative size of the transition metal: oxoanion group, with the triclinic structure favoured for small transition metals/large oxoanions. The successful synthesis of fluorophosphate doped samples, Na{sub 2}M(SO{sub 4}){sub 2−x}(PO{sub 3}F){sub x}·2H{sub 2}O was also obtained for M=Fe, Co, Cu, with the results showing a changeover in structure from monoclinic to triclinic for M=Co, Cu for very low levels (x=0.1) of fluorophosphate. In the case of M=Fe, the successful synthesis of fluorophosphates samples was achieved for x≤0.3, although no change in cell symmetry was observed. Rather in this particular case, the X-ray diffraction patterns showed evidence for selective peak broadening, attributed to local disorder as a result of the fluorophosphate group disrupting the H-bonding network. Overall the work highlights how isovalent doping can be exploited to alter the structures of Na{sub 2}M(SO{sub 4}){sub 2}·2H{sub 2}O systems. - Graphical abstract: Partial substitution of sulfate in Na{sub 2}M(SO{sub 4}){sub 2}0.2H{sub 2}O (M=Co, Cu) by selenate or fluorophosphate leads to a structural change from the monoclinic Kröhnkite to the triclinic Fairfieldite structure. - Highlights: • The successful synthesis of Na{sub 2}M(SO{sub 4}){sub 2}·2H{sub 2}O (M=transition metal) phases doped with selenate and fluorophosphate. • A change in structure is observed on selenate doping for M=Fe, Co, Cu. • This change in structure is also observed on fluorophosphate doping for M=Co, Cu. • The work highlights how isovalent doping can be exploited to alter the structures of Na{sub 2}M(SO{sub 4}){sub 2}·2H{sub 2}O systems.« less

Low-toxic Mn-doped ZnSe@ZnS quantum dots conjugated with nano-hydroxyapatite for cell imaging

NASA Astrophysics Data System (ADS)

Zhou, Ronghui; Li, Mei; Wang, Shanling; Wu, Peng; Wu, Lan; Hou, Xiandeng

2014-11-01

Fluorescent bio-imaging has received significant attention in a myriad of research disciplines, and QDs are playing an increasingly important role in these areas. Doped QDs, an important alternative to conventional heavy metal-containing QDs are employed for biomedical applications. However, since QDs are exogenous substances to the biological environment, the biocompatibility of QDs is expected to be challenging in some cases. Herein, nano fluorine-doped hydroxyapatite (FAp, a well-known biocompatible material) was introduced to endow biocompatibility to Cd-free Mn-doped ZnSe@ZnS QDs. Thus, a nano-FAp-QD conjugate was developed and the biocompatibility, as well as potential cell imaging application, was investigated. To construct the proposed conjugate, Cd-free highly luminescent Mn-doped ZnSe@ZnS QDs and monodispersed nano-FAp were first prepared in high-temperature organic media. For facilitating the conjugation, hydrophobic nano-FAp was made water soluble via o-phosphoethanolamine (PEA) coating, which further provides conjugating sites for QDs to anchor. Cytotoxicity studies indicated the developed conjugate indeed possesses good compatibility and low toxicity to cells. The nano-FAp-QDs conjugate was successfully employed for cancer cell staining for at least 24 h, demonstrating the potential usefulness of this material in future biomedical research.Fluorescent bio-imaging has received significant attention in a myriad of research disciplines, and QDs are playing an increasingly important role in these areas. Doped QDs, an important alternative to conventional heavy metal-containing QDs are employed for biomedical applications. However, since QDs are exogenous substances to the biological environment, the biocompatibility of QDs is expected to be challenging in some cases. Herein, nano fluorine-doped hydroxyapatite (FAp, a well-known biocompatible material) was introduced to endow biocompatibility to Cd-free Mn-doped ZnSe@ZnS QDs. Thus, a nano-FAp-QD conjugate was developed and the biocompatibility, as well as potential cell imaging application, was investigated. To construct the proposed conjugate, Cd-free highly luminescent Mn-doped ZnSe@ZnS QDs and monodispersed nano-FAp were first prepared in high-temperature organic media. For facilitating the conjugation, hydrophobic nano-FAp was made water soluble via o-phosphoethanolamine (PEA) coating, which further provides conjugating sites for QDs to anchor. Cytotoxicity studies indicated the developed conjugate indeed possesses good compatibility and low toxicity to cells. The nano-FAp-QDs conjugate was successfully employed for cancer cell staining for at least 24 h, demonstrating the potential usefulness of this material in future biomedical research. Electronic supplementary information (ESI) available: Experimental details. See DOI: 10.1039/c4nr04473h

Microscopic effects of Dy doping in the topological insulator Bi2Te3

NASA Astrophysics Data System (ADS)

Duffy, L. B.; Steinke, N.-J.; Krieger, J. A.; Figueroa, A. I.; Kummer, K.; Lancaster, T.; Giblin, S. R.; Pratt, F. L.; Blundell, S. J.; Prokscha, T.; Suter, A.; Langridge, S.; Strocov, V. N.; Salman, Z.; van der Laan, G.; Hesjedal, T.

2018-05-01

Magnetic doping with transition metal ions is the most widely used approach to break time-reversal symmetry in a topological insulator (TI)—a prerequisite for unlocking the TI's exotic potential. Recently, we reported the doping of Bi2Te3 thin films with rare-earth ions, which, owing to their large magnetic moments, promise commensurately large magnetic gap openings in the topological surface states. However, only when doping with Dy has a sizable gap been observed in angle-resolved photoemission spectroscopy, which persists up to room temperature. Although disorder alone could be ruled out as a cause of the topological phase transition, a fundamental understanding of the magnetic and electronic properties of Dy-doped Bi2Te3 remained elusive. Here, we present an x-ray magnetic circular dichroism, polarized neutron reflectometry, muon-spin rotation, and resonant photoemission study of the microscopic magnetic and electronic properties. We find that the films are not simply paramagnetic but that instead the observed behavior can be well explained by the assumption of slowly fluctuating, inhomogeneous, magnetic patches with increasing volume fraction as the temperature decreases. At liquid helium temperatures, a large effective magnetization can be easily introduced by the application of moderate magnetic fields, implying that this material is very suitable for proximity coupling to an underlying ferromagnetic insulator or in a heterostructure with transition-metal-doped layers. However, the introduction of some charge carriers by the Dy dopants cannot be excluded at least in these highly doped samples. Nevertheless, we find that the magnetic order is not mediated via the conduction channel in these samples and therefore magnetic order and carrier concentration are expected to be independently controllable. This is not generally the case for transition-metal-doped topological insulators, and Dy doping should thus allow for improved TI quantum devices.

How the Story Unfolds: Exploring Ways Faculty Develop Open-Ended and Closed-Ended Case Designs

ERIC Educational Resources Information Center

Nesbitt, Leslie M.; Cliff, William H.

2008-01-01

Open-ended or closed-ended case study design schemes offer different educational advantages. Anatomy and physiology faculty members who participated in a conference workshop were given an identical case about blood doping and asked to build either an open-ended study or a closed-ended study. The workshop participants created a rich array of case…

Antimicrobial peptides at work: interaction of myxinidin and its mutant WMR with lipid bilayers mimicking the P. aeruginosa and E. coli membranes

NASA Astrophysics Data System (ADS)

Lombardi, Lucia; Stellato, Marco Ignazio; Oliva, Rosario; Falanga, Annarita; Galdiero, Massimiliano; Petraccone, Luigi; D'Errico, Geradino; de Santis, Augusta; Galdiero, Stefania; Del Vecchio, Pompea

2017-03-01

Antimicrobial peptides are promising candidates as future therapeutics in order to face the problem of antibiotic resistance caused by pathogenic bacteria. Myxinidin is a peptide derived from the hagfish mucus displaying activity against a broad range of bacteria. We have focused our studies on the physico-chemical characterization of the interaction of myxinidin and its mutant WMR, which contains a tryptophan residue at the N-terminus and four additional positive charges, with two model biological membranes (DOPE/DOPG 80/20 and DOPE/DOPG/CL 65/23/12), mimicking respectively Escherichia coli and Pseudomonas aeruginosa membrane bilayers. All our results have coherently shown that, although both myxinidin and WMR interact with the two membranes, their effect on membrane microstructure and stability are different. We further have shown that the presence of cardiolipin plays a key role in the WMR-membrane interaction. Particularly, WMR drastically perturbs the DOPE/DOPG/CL membrane stability inducing a segregation of anionic lipids. On the contrary, myxinidin is not able to significantly perturb the DOPE/DOPG/CL bilayer whereas interacts better with the DOPE/DOPG bilayer causing a significant perturbing effect of the lipid acyl chains. These findings are fully consistent with the reported greater antimicrobial activity of WMR against P. aeruginosa compared with myxinidin.

Use of nutritional supplements by Danish elite athletes and fitness customers.

PubMed

Solheim, S A; Nordsborg, N B; Ritz, C; Berget, J; Kristensen, A H; Mørkeberg, J

2017-08-01

The nutritional supplement (NS) industry is one of the fastest growing in the world, and NS use in Denmark is among the highest in Europe. However, the exact use in elite athletes and fitness customers targeted for doping control is unknown. Information from 634 doping control forms obtained in 2014 was evaluated (elite athletes: n = 361; fitness customers: n = 273). The majority of female (92.6%) and male (85.0%) elite athletes and female (100.0%) and male (94.0%) fitness customers declared using one or more NS. The use of non-ergogenic NS was more prevalent in women than in men and in younger (15-34 years) compared with older (35-49 years) subjects, but it was less prevalent in intermittent compared with endurance and power/strength sports. Additionally, fitness customers who tested positive for doping also reported using more NS than subjects testing negative, indicating an association between NS and doping abuse. The present results demonstrate a very high prevalence of NS usage in both elite athletes and fitness customers. This highlights the importance of a strong national regulation of NS to avoid contamination of NS with doping substances. © 2016 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires.

PubMed

Li, Zhen; Xu, Enzhi; Losovyj, Yaroslav; Li, Nan; Chen, Aiping; Swartzentruber, Brian; Sinitsyn, Nikolai; Yoo, Jinkyoung; Jia, Quanxi; Zhang, Shixiong

2017-09-14

The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indium doped SnTe is of particular interest because, depending on the doping level, it can either generate resonant states in the bulk valence band leading to enhanced thermoelectric properties, or induce superconductivity that coexists with topological states. Here we report on the vapor deposition of In-doped SnTe nanowires and the study of their surface oxidation and thermoelectric properties. The nanowire growth is assisted by Au catalysts, and their morphologies vary as a function of substrate position and temperature. Transmission electron microscopy characterization reveals the formation of an amorphous surface in single crystalline nanowires. X-ray photoelectron spectroscopy studies suggest that the nanowire surface is composed of In 2 O 3 , SnO 2 , Te and TeO 2 which can be readily removed by argon ion sputtering. Exposure of the cleaned nanowires to atmosphere leads to rapid oxidation of the surface within only one minute. Characterization of electrical conductivity σ, thermopower S, and thermal conductivity κ was performed on the same In-doped nanowire which shows suppressed σ and κ but enhanced S yielding an improved thermoelectric figure of merit ZT compared to the undoped SnTe.

First-principles calculations of the magnetic properties of (Cd,Mn)Te nanocrystals

NASA Astrophysics Data System (ADS)

Echeverría-Arrondo, C.; Pérez-Conde, J.; Ayuela, A.

2009-04-01

We investigate the electronic and magnetic properties of Mn-doped CdTe nanocrystals (NCs) with ˜2nm in diameter which can be experimentally synthesized with Mn atoms inside. Using the density-functional theory, we consider two doping cases: NCs containing one or two Mn impurities. Although the Mnd peaks carry five up electrons in the dot, the local magnetic moment on the Mn site is 4.65μB . It is smaller than 5μB because of the sp-d hybridization between the localized 3d electrons of the Mn atoms and the s - and p -type valence states of the host compound. The sp-d hybridization induces small magnetic moments on the Mn-nearest-neighbor Te sites, antiparallel to the Mn moment affecting the p -type valence states of the undoped dot, as usual for a kinetic-mediated exchange magnetic coupling. Furthermore, we calculate the parameters standing for the sp-d exchange interactions. Conduction N0α and valence N0β are close to the experimental bulk values when the Mn impurities occupy bulklike NCs’ central positions, and they tend to zero close to the surface. This behavior is further explained by an analysis of valence-band-edge states showing that symmetry breaking splits the states and in consequence reduces the exchange. For two Mn atoms in several positions, the valence edge states show a further departure from an interpretation based in a perturbative treatment. We also calculate the d-d exchange interactions |Jdd| between Mn spins. The largest |Jdd| value is also for Mn atoms on bulklike central sites; in comparison with the experimental d-d exchange constant in bulk Cd0.95Mn0.05Te , it is four times smaller.

Anomalous behavior of B{sub 1g} mode in highly transparent anatase nano-crystalline Nb-doped Titanium Dioxide (NTO) thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gautam, Subodh K., E-mail: subodhkgtm@gmail.com, E-mail: fouran@gmail.com; Ojha, S.; Singh, Fouran, E-mail: subodhkgtm@gmail.com, E-mail: fouran@gmail.com

2015-12-15

The effect of Niobium doping and size of crystallites on highly transparent nano-crystalline Niobium doped Titanium Dioxide (NTO) thin films with stable anatase phase are reported. The Nb doping concentration is varied within the solubility limit in TiO{sub 2} lattice. Films were annealed in controlled environment for improving the crystallinity and size of crystallites. Elemental and thickness analysis were carried out using Rutherford backscattering spectrometry and cross sectional field emission scanning electron microscopy. Structural characteristics reveal a substitutional incorporation of Nb{sup +5} in the TiO{sub 2} lattice which inhibits the anatase crystallites growth with increasing the doping percentage. The micro-Ramanmore » (MR) spectra of films with small size crystallites shows stiffening of about 4 cm{sup −1} for the E{sub g(1)} mode and is ascribed to phonon confinement and non-stoichiometry. In contrast, B{sub 1g} mode exhibits a large anomalous softening of 20 cm{sup −1} with asymmetrical broadening; which was not reported for the case of pure TiO{sub 2} crystallites. This anomalous behaviour is explained by contraction of the apical Ti-O bonds at the surface upon substitutional Nb{sup 5+} doping induced reduction of Ti{sup 4+} ions also known as hetero-coordination effect. The proposed hypotheses is manifested through studying the electronic structure and phonon dynamics by performing the near edge x-ray absorption fine structure (NEXAFS) and temperature dependent MR down to liquid nitrogen temperature on pure and 2.5 at.% doped NTO films, respectively.« less

Generic sample preparation combined with high-resolution liquid chromatography-time-of-flight mass spectrometry for unification of urine screening in doping-control laboratories.

PubMed

Peters, R J B; Oosterink, J E; Stolker, A A M; Georgakopoulos, C; Nielen, M W F

2010-04-01

A unification of doping-control screening procedures of prohibited small molecule substances--including stimulants, narcotics, steroids, beta2-agonists and diuretics--is highly urgent in order to free resources for new classes such as banned proteins. Conceptually this may be achieved by the use of a combination of one gas chromatography-time-of-flight mass spectrometry method and one liquid chromatography-time-of-flight mass spectrometry method. In this work a quantitative screening method using high-resolution liquid chromatography in combination with accurate-mass time-of-flight mass spectrometry was developed and validated for determination of glucocorticosteroids, beta2-agonists, thiazide diuretics, and narcotics and stimulants in urine. To enable the simultaneous isolation of all the compounds of interest and the necessary purification of the resulting extracts, a generic extraction and hydrolysis procedure was combined with a solid-phase extraction modified for these groups of compounds. All 56 compounds are determined using positive electrospray ionisation with the exception of the thiazide diuretics for which the best sensitivity was obtained by using negative electrospray ionisation. The results show that, with the exception of clenhexyl, procaterol, and reproterol, all compounds can be detected below the respective minimum required performance level and the results for linearity, repeatability, within-lab reproducibility, and accuracy show that the method can be used for quantitative screening. If qualitative screening is sufficient the instrumental analysis may be limited to positive ionisation, because all analytes including the thiazides can be detected at the respective minimum required levels in the positive mode. The results show that the application of accurate-mass time-of-flight mass spectrometry in combination with generic extraction and purification procedures is suitable for unification and expansion of the window of screening methods of doping laboratories. Moreover, the full-scan accurate-mass data sets obtained still allow retrospective examination for emerging doping agents, without re-analyzing the samples.

Generalization of the van der Pauw Method: Analyzing Longitudinal Magnetoresistance Asymmetry to Quantify Doping Gradients

NASA Astrophysics Data System (ADS)

Grayson, M.; Zhou, Wang; Yoo, Heun-Mo; Prabhu-Gaunkar, S.; Tiemann, L.; Reichl, C.; Wegscheider, W.

A longitudinal magnetoresistance asymmetry (LMA) between a positive and negative magnetic field is known to occur in both the extreme quantum limit and the classical Drude limit in samples with a nonuniform doping density. By analyzing the current stream function in van der Pauw measurement geometry, it is shown that the electron density gradient can be quantitatively deduced from this LMA in the Drude regime. Results agree with gradients interpolated from local densities calibrated across an entire wafer, establishing a generalization of the van der Pauw method to quantify density gradients. Results will be shown of various semoconductor systems where this method is applied, from bulk doped semiconductors, to exfoliated 2D materials. McCormick Catalyst Award from Northwestern University, EECS Bridge Funding, and AFOSR FA9550-15-1-0247.

Rare-earth doped nanocomposites enable multiscale targeted short-wave infrared imaging of metastatic breast cancer

NASA Astrophysics Data System (ADS)

Pierce, Mark C.; Higgins, Laura M.; Ganapathy, Vidya; Kantamneni, Harini; Riman, Richard E.; Roth, Charles M.; Moghe, Prabhas V.

2017-02-01

We are investigating the ability of targeted rare earth (RE) doped nanocomposites to detect and track micrometastatic breast cancer lesions to distant sites in pre-clinical in vivo models. Functionalizing RE nanocomposites with AMD3100 promotes targeting to CXCR4, a recognized marker for highly metastatic disease. Mice were inoculated with SCP-28 (CXCR4 positive) and 4175 (CXCR4 negative) cell lines. Whole animal in vivo SWIR fluorescence imaging was performed after bioluminescence imaging confirmed tumor burden in the lungs. Line-scanning confocal fluorescence microscopy provided high-resolution imaging of RE nanocomposite uptake and native tissue autofluorescence in ex vivo lung specimens. Co-registered optical coherence tomography imaging allowed assessment of tissue microarchitecture. In conclusion, multiscale optical molecular imaging can be performed in pre-clinical models of metastatic breast cancer, using targeted RE-doped nanocomposites.

Synthesis and luminescence properties of vanadium-doped nanosized zinc oxide aerogel

NASA Astrophysics Data System (ADS)

El Mir, L.; El Ghoul, J.; Alaya, S.; Ben Salem, M.; Barthou, C.; von Bardeleben, H. J.

2008-05-01

We report the elaboration of vanadium-doped ZnO nanoparticles prepared by a sol-gel processing technique. In our approach, the water for hydrolysis was slowly released by esterification reaction followed by a supercritical drying in ethyl alcohol. Vanadium doping concentration of 10 at% has been investigated. The obtained nanopowder was characterised by various techniques such as particle size analysis, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and photoluminescence (PL). In the as-prepared state, the powder with an average particle size of 25 nm presents a strong luminescence band in the visible range after thermal treatment at 500 °C in air. The energy position of the obtained PL band depends on the wavelength excitation and presents a blue shift with measurement temperature increase. Different possible attributions of this emission band will be discussed.

Phosphorus Doping Effect in a Zinc Oxide Channel Layer to Improve the Performance of Oxide Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Han, Dong-Suk; Moon, Yeon-Keon; Lee, Sih; Kim, Kyung-Taek; Moon, Dae-Yong; Lee, Sang-Ho; Kim, Woong-Sun; Park, Jong-Wan

2012-09-01

In this study, we fabricated phosphorus-doped zinc oxide-based thin-film transistors (TFTs) using direct current (DC) magnetron sputtering at a relatively low temperature of 100°C. To improve the TFT device performance, including field-effect mobility and bias stress stability, phosphorus dopants were employed to suppress the generation of intrinsic defects in the ZnO-based semiconductor. The positive and negative bias stress stabilities were dramatically improved by introducing the phosphorus dopants, which could prevent turn-on voltage ( V ON) shift in the TFTs caused by charge trapping within the active channel layer. The study showed that phosphorus doping in ZnO was an effective method to control the electrical properties of the active channel layers and improve the bias stress stability of oxide-based TFTs.

Rectification induced in N{sub 2}{sup AA}-doped armchair graphene nanoribbon device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Tong; Wang, Ling-Ling, E-mail: llwang@hnu.edu.cn; Luo, Kai-Wu

2014-07-07

By using non-equilibrium Green function formalism in combination with density functional theory, we investigated the electronic transport properties of armchair graphene nanoribbon devices in which one lead is undoped and the other is N{sub 2}{sup AA}-doped with two quasi-adjacent substitutional nitrogen atoms incorporating pairs of neighboring carbon atoms in the same sublattice A. Two kinds of N{sub 2}{sup AA}-doped style are considered, for N dopants substitute the center or the edge carbon atoms. Our results show that the rectification behavior with a large rectifying ratio can be found in these devices and the rectifying characteristics can be modulated by changingmore » the width of graphene nanoribbons or the position of the N{sub 2}{sup AA} dopant. The mechanisms are revealed to explain the rectifying behaviors.« less

Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jing; Zhao, Degang, E-mail: dgzhao@red.semi.ac.cn; Jiang, Desheng

2015-03-15

The effects of hydrogen impurities on p-type resistivity in Mg-doped GaN films were investigated. It was found that hydrogen impurities may have the dual role of passivating Mg{sub Ga} acceptors and passivating donor defects. A decrease in p-type resistivity when O{sub 2} is introduced during the postannealing process is attributed to the fact that annealing in an O{sub 2}-containing environment can enhance the dissociation of Mg{sub Ga}-H complexes as well as the outdiffusion of H atoms from p-GaN films. However, low H concentrations are not necessarily beneficial in Mg-doped GaN films, as H atoms may also be bound at donormore » species and passivate them, leading to the positive effect of reduced compensation.« less

Thermoluminescence (TL) dosimeter of dysprosium doped strontium borate glass for different glass modifiers (Na, Li, Ca) subjected from 1 to 9 Gy doses

NASA Astrophysics Data System (ADS)

Hamzah, S. A.; Saeed, M. A.; Wagiran, H.; Hashim, I. H.

2017-10-01

This article reports TL response for different glass modifier and doping concentration. Alkali oxides (Na2O and Li2O) and alkali earth oxide (CaO) will be used as a glass modifier for strontium borate based glass. The samples were prepared by melt quenching technique. Dy2O3 concentrations ranging from 0.00 to 0.70 mol% and exposure doses of 1 to 9 Gy will be varied. All glass samples exhibit the prominent peak temperature positioned at 186 oC to 232 oC. From all the samples, one of the samples shows an excellent linearity dose response, higher TL and show good reproducibility after 5 cycles exposure which is sodium strontium borate doped with 0.1 mol% Dy2O3 (optimum concentration).

Electrical and photocatalytic properties of boron-doped ZnO nanostructure grown on PET-ITO flexible substrates by hydrothermal method

NASA Astrophysics Data System (ADS)

Wang, Wei; Ai, Taotao; Yu, Qi

2017-02-01

Boron-doped zinc oxide sheet-spheres were synthesized on PET-ITO flexible substrates using a hydrothermal method at 90 °C for 5 h. The results of X-ray diffraction and X-ray photoelectron spectroscopy indicated that the B atoms were successfully doped into the ZnO lattice, the incorporation of B led to an increase in the lattice constant of ZnO and a change in its internal stress. The growth mechanism of pure ZnO nanorods and B-doped ZnO sheet-spheres was specifically investigated. The as-prepared BZO/PET-ITO heterojunction possessed obvious rectification properties and its positive turn-on voltage was 0.4 V. The carrier transport mechanisms involved three models such as hot carrier tunneling theory, tunneling recombination, and series-resistance effect were explored. The BZO/PET-ITO nanostructures were more effective than pure ZnO to degrade the RY 15, and the degradation rate reached 41.45%. The decomposition process with BZO nanostructure followed first-order reaction kinetics. The photocurrent and electrochemical impedance spectroscopy revealed that the B-doping could promote the separation of photo-generated electron-hole pairs, which was beneficial to enhance the photocatalytic activity. The photocurrent density of B-doped and pure ZnO/PET-ITO were 0.055 mA/cm2 and 0.016 mA/cm2, respectively. The photocatalytic mechanism of the sample was analyzed by the energy band theory.

Pressure Dependence of the Liquid-Liquid Phase Transition of Nanopore Water Doped Slightly with Hydroxylamine, and a Phase Behavior Predicted for Pure Water

NASA Astrophysics Data System (ADS)

Nagoe, Atsushi; Iwaki, Shinji; Oguni, Masaharu; Tôzaki, Ken-ichi

2014-09-01

Phase transition behaviors of confined pure water and confined water doped with a small amount of hydroxylamine (HA) with a mole fraction of xHA = 0.03 were examined by high-pressure differential thermal analyses at 0.1, 50, 100, and 150 MPa; the average diameters of silica pores used were 2.0 and 2.5 nm. A liquid-liquid phase transition (LLPT) of the confined HA-doped water was clearly observed and its pressurization effect could be evaluated, unlike in the experiments on undoped water. It was found that pressurization causes the transition temperature (Ttrs) to linearly decrease, indicating that the low-temperature phase has a lower density than the high-temperature one. Transition enthalpy (ΔtrsH) decreased steeply with increasing pressure. Considering the linear decrease in Ttrs with increasing pressure, the steep decrease in ΔtrsH indicates that the LLPT effect of the HA-doped water attenuates with pressure. We present a new scenario of the phase behavior concerning the LLPT of pure water based on the analogy from the behavior of slightly HA-doped water, where a liquid-liquid critical point (LLCP) and a coexistence line are located in a negative-pressure regime but not in a positive-pressure one. It is reasonably understood that doping a small amount of HA into water results in negative chemical pressurization and causes the LLPT to occur even at ambient pressure.

Photocatalytic degradation of Rhodamine B dye using Fe doped TiO2 nanocomposites

NASA Astrophysics Data System (ADS)

Barkhade, Tejal; Banerjee, Indrani

2018-05-01

The unique properties of titanium dioxide (TiO2) such as high photo catalytic activity, high chemical stability and low toxicity have made it a suitable photocatalyst in recent decades. The effect of modification of TiO2 with doping of iron on its characteristics and photo catalytic efficiency was studied. The change in band gap energy of TiO2 nanoparticles after doping with Fe has been studied. Significant enhancement in photo catalytic property of TiO2 after Fe doping under light exposure conditions has been investigated. Acute exposure to non-biodegradable Rhodamine B resulted in many health problems like burning of eyes, skin irritation, nasal burning, and chest pain etc. Therefore, degradation of this dye is needed to save environment and animals. Considering the similar radius of Fe3+ and Ti4+ ions (respectively 0.64 Å and 0.68 Å), titanium position in the lattice of TiO2 can be replaced by iron cations easily. The undoped and Fe doped TiO2 nano composites were synthesized by sol-gel method, in which 1.0M% of Fe was doped with TiO2 and then the samples were characterized by using FE-SEM, UV-Visible diffuse spectroscopy, Raman Spectroscopy, and FTIR. Photo catalytic degradation of Rhodamine B dye experiment was carried out in visible light range. After 90 min time duration pink colour of dye turned colourless, indicating significant degradation rate with time.

Three-dimensional gold nanorods-doped multicolor microstructures

NASA Astrophysics Data System (ADS)

Lien, C.-H.; Cho, K.-C.; Kuo, W.-S.; Lin, C.-Y.; Chui, C.-L.; Chen, S.-J.

2012-03-01

In this study, three-dimensional (3D) crosslinked bovine serum albumin (BSA) microstructures containing gold nanorods (AuNRs) at different absorption wavelengths were fabricated via multiphoton excited photochemistry using rose Bengal (RB) as the photoactivator. After the processing, a higher laser power, greater than the threshold of the AuNR photothermal damage at the matched wavelength for the longitudinal plasmon resonance of AuNR, is adopted to reshape the AuNRs into gold nanospheres at the designed positions of the 3D structure. As a result, 3D BSA microstructures containing different color AuNRs at the designed positions can be successfully fabricated. The AuNRs-doped BSA multicolor microstructures not only can be applied in biomedical scaffolds with plasmonic properties such as two-photon luminescence imaging and photothermal therapy but also can be a specific 3D biomaterial microdevice for plasmonic field.

Implications of orbital hybridization on the electronic properties of doped quantum dots: the case of Cu:CdSe

NASA Astrophysics Data System (ADS)

Wright, Joshua T.; Forsythe, Kyle; Hutchins, Jamie; Meulenberg, Robert W.

2016-04-01

This paper investigates how chemical dopants affect the electronic properties of CdSe quantum dots (QDs) and why a model that incorporates the concepts of orbital hybridization must be used to understand these properties. Extended X-ray absorption fine structure spectroscopy measurements show that copper dopants in CdSe QDs occur primarily through a statistical doping mechanism. Ultraviolet photoemission spectroscopy (UPS) experiments provide a detailed insight on the valence band (VB) structure of doped and undoped QDs. Using UPS measurements, we are able to observe photoemission from the Cu d-levels above VB maximum of the QDs which allows a complete picture of the energy band landscape of these materials. This information provides insights into many of the physical properties of doped QDs, including the highly debated near-infrared photoluminescence in Cu doped CdSe QDs. We show that all our results point to a common theme of orbital hybridization in Cu doped CdSe QDs which leads to optically and electronically active states below the conduction band minimum. Our model is supported from current-voltage measurements of doped and undoped materials, which exhibit Schottky to Ohmic behavior with Cu doping, suggestive of a tuning of the lowest energy states near the Fermi level.This paper investigates how chemical dopants affect the electronic properties of CdSe quantum dots (QDs) and why a model that incorporates the concepts of orbital hybridization must be used to understand these properties. Extended X-ray absorption fine structure spectroscopy measurements show that copper dopants in CdSe QDs occur primarily through a statistical doping mechanism. Ultraviolet photoemission spectroscopy (UPS) experiments provide a detailed insight on the valence band (VB) structure of doped and undoped QDs. Using UPS measurements, we are able to observe photoemission from the Cu d-levels above VB maximum of the QDs which allows a complete picture of the energy band landscape of these materials. This information provides insights into many of the physical properties of doped QDs, including the highly debated near-infrared photoluminescence in Cu doped CdSe QDs. We show that all our results point to a common theme of orbital hybridization in Cu doped CdSe QDs which leads to optically and electronically active states below the conduction band minimum. Our model is supported from current-voltage measurements of doped and undoped materials, which exhibit Schottky to Ohmic behavior with Cu doping, suggestive of a tuning of the lowest energy states near the Fermi level. Electronic supplementary information (ESI) available: Thermogravimetric analysis and X-ray photoelectron spectroscopy of QD films. See DOI: 10.1039/C6NR00494F

Influence of Ga doping ratio on the saturable absorption mechanism in Ga doped ZnO thin solid films processed by sol-gel spin coating technique

NASA Astrophysics Data System (ADS)

Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.; Byrappa, K.

2017-03-01

In the present study, the nonlinear optical properties of sol-gel spin coated gallium doped zinc oxide (GZO) thin solid films are explored with nanosecond laser pulses using the z-scan technique. The higher doping ratios of Ga result in a large redshift of the energy gap (0.38 eV) due to the existence of enhanced grain boundary defects in GZO films. A positive nonlinear absorption coefficient is observed in undoped 1 at.wt.% GZO and 2 at.wt.% GZO films, and a negative nonlinear absorption coefficient in 3 at.wt.% GZO film. Fewer defects in undoped 1% GZO and 2% GZO films resulted in reverse saturable absorption (RSA), whereas a saturable absorption (SA) mechanism is observed in 3% GZO films and is attributed to the enhanced defect concentration in the band structure of GZO. However, all the films showed a self-defocusing mechanism, derived by a closed aperture z-scan technique. The present work sheds light on the defect mechanism involved in the observed nonlinear properties of GZO films.

Thermal, structural, functional, optical and magnetic studies of pure and Ba doped CdO nanoparticles.

PubMed

Sivakumar, S; Venkatesan, A; Soundhirarajan, P; Khatiwada, Chandra Prasad

2015-12-05

In this research, a chemical precipitation method was used to synthesize undoped and doped cadmium oxide nanoparticles and studied by TG-DTA, XRD, FT-IR, SEM, with EDX and antibacterial activities, respectively. The melting points, thermal stability and the kinetic parameters like entropy (ΔS), enthalpy (ΔH), Gibb's energy (ΔG), activation energy (E), frequency factor (A) were evaluated from TG-DTA measurements. X-ray diffraction analysis (XRD) brought out the information about the synthesized products exist in spherical in shape with cubic structure. The functional groups and band area of the samples were established by Fourier transform infrared (FT-IR) spectroscopy. The direct and indirect band gap energy of pure and doped samples were determined by UV-Vis-DRS. The surface morphological, elemental compositions and particles sizes were evaluated by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). Finally, antibacterial activities indicated the Gram-positive and Gram-negative bacteria are more active in transporter, dehydrogenize and periplasmic enzymatic activities of pure and doped samples. Copyright © 2015 Elsevier B.V. All rights reserved.

The electronic structures and work functions of (100) surface of typical binary and doped REB6 single crystals

NASA Astrophysics Data System (ADS)

Liu, Hongliang; Zhang, Xin; Xiao, Yixin; Zhang, Jiuxing

2018-03-01

The density function theory been used to calculate the electronic structures of binary and doped rare earth hexaborides (REB6), which exhibits the large density of states (DOS) near Fermi level. The d orbital elections of RE element contribute the electronic states of election emission near the Fermi level, which imply that the REB6 (RE = La, Ce, Gd) with wide distribution of high density d orbital electrons could provide a lower work function and excellent emission properties. Doping RE elements into binary REB6 can adjust DOS and the position of the Fermi energy level. The calculated work functions of considered REB6 (100) surface show that the REB6 (RE = La, Ce, Gd) have lower work function and doping RE elements with active d orbital electrons can significantly reduce work function of binary REB6. The thermionic emission test results are basically accordant with the calculated value, proving the first principles calculation could provide a good theoretical guidance for the study of electron emission properties of REB6.

Methanol adsorption and dissociation on LaMnO 3 and Sr doped LaMnO 3 (001) surfaces

DOE PAGES

Beste, Ariana

2017-06-20

Using density functional theory, we investigate in this paper methanol adsorption and dissociation on the MnO 2- and LaO-terminated LaMnO 3 (001) surface as a function of Sr dopant enrichment in and near the surface. In response to bulk cleavage, we find electron depletion of the negatively charged MnO 2 surface layer that is enhanced by Sr doping in the subsurface. In contrast, we observe electron accumulation in the positively charged LaO surface layer that is reduced by Sr doping in the surface layer. Methanol adsorbs dissociatively on the LaO termination of the LaMnO 3 (001) surface. Methanol adsorption onmore » the LaO termination is strongly preferred over adsorption on the MnO 2 termination. While moderate doping has a small influence on methanol adsorption and dissociation, when 100% of La is replaced by Sr in the surface or subsurface, the adsorption preference of methanol is reversed. Finally, if the surface is highly dopant enriched, methanol favours dissociative adsorption on the MnO 2-terminated surface.« less

Methanol adsorption and dissociation on LaMnO 3 and Sr doped LaMnO 3 (001) surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beste, Ariana

Using density functional theory, we investigate in this paper methanol adsorption and dissociation on the MnO 2- and LaO-terminated LaMnO 3 (001) surface as a function of Sr dopant enrichment in and near the surface. In response to bulk cleavage, we find electron depletion of the negatively charged MnO 2 surface layer that is enhanced by Sr doping in the subsurface. In contrast, we observe electron accumulation in the positively charged LaO surface layer that is reduced by Sr doping in the surface layer. Methanol adsorbs dissociatively on the LaO termination of the LaMnO 3 (001) surface. Methanol adsorption onmore » the LaO termination is strongly preferred over adsorption on the MnO 2 termination. While moderate doping has a small influence on methanol adsorption and dissociation, when 100% of La is replaced by Sr in the surface or subsurface, the adsorption preference of methanol is reversed. Finally, if the surface is highly dopant enriched, methanol favours dissociative adsorption on the MnO 2-terminated surface.« less

Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoo, Jinkyoung; Ahmed, Towfiq; Tang, Wei

ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. Here, we report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO.more » Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. Lastly, the reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.« less

Solution-processed gadolinium doped indium-oxide thin-film transistors with oxide passivation

NASA Astrophysics Data System (ADS)

Lee, Seung-Hun; Kim, Taehun; Lee, Jihun; Avis, Christophe; Jang, Jin

2017-03-01

We studied the effect of Gd doping on the structural properties of solution processed, crystalline In2O3 for thin-film transistor (TFT) application. With increasing Gd in In2O3 up to 20%, the material structure changes into amorphous phase, and the oxygen vacancy concentration decreases from 15.4 to 8.4%, and M-OH bonds from 33.5 to 23.7%. The field-effect mobility for the Gd doped In2O3 TFTs decreases and threshold voltage shifts to the positive voltage with increasing Gd concentration. In addition, the stability of the solution processed TFTs can also be improved by increasing Gd concentration. As a result, the optimum Gd concentration is found to be ˜5% in In2O3 and the 5% Gd doped In2O3 TFTs with the Y2O3 passivation layer exhibit the linear mobility of 9.74 cm2/V s, the threshold voltage of -0.27 V, the subthreshold swing of 79 mV/dec., and excellent bias stability.

The effect of shallow vs. deep level doping on the performance of thermoelectric materials

NASA Astrophysics Data System (ADS)

Song, Qichen; Zhou, Jiawei; Meroueh, Laureen; Broido, David; Ren, Zhifeng; Chen, Gang

2016-12-01

It is well known that the efficiency of a good thermoelectric material should be optimized with respect to doping concentration. However, much less attention has been paid to the optimization of the dopant's energy level. Thermoelectric materials doped with shallow levels may experience a dramatic reduction in their figures of merit at high temperatures due to the excitation of minority carriers that reduces the Seebeck coefficient and increases bipolar heat conduction. Doping with deep level impurities can delay the excitation of minority carriers as it requires a higher temperature to ionize all dopants. We find through modeling that, depending on the material type and temperature range of operation, different impurity levels (shallow or deep) will be desired to optimize the efficiency of a thermoelectric material. For different materials, we further clarify where the most preferable position of the impurity level within the bandgap falls. Our research provides insight on why different dopants often affect thermoelectric transport properties differently and directions in searching for the most appropriate dopants for a thermoelectric material in order to maximize the device efficiency.

Research of green emitting rare-earth doped materials as potential quantum-cutter

NASA Astrophysics Data System (ADS)

Moine, Bernard; Beauzamy, Lena; Gredin, Patrick; Wallez, Gilles; Labeguerie, Jessica

2008-03-01

Because the energy of vacuum ultraviolet (VUV) photons emitted by xenon plasma discharge is more than twice that of visible photons, quantum cutting appears to be a promising process in rare-earth doped materials in order to obtain efficient phosphors for mercury free lighting devices as well as for plasma display panels. With an aim of application, it is important to take into account the emitting color of the developed new phosphors. Most of the time, this leads to use systems with at least two kinds of rare earth ions: one of them playing the role of energy sensitizer, and the other one being in charge of emitting the light of the suitable color. We focus our attention on green rare-earth doped materials. In order to get very efficient phosphors, it is not only necessary to get the highest possible quantum yield, but also to have a material characterized by a strong absorption in the VUV range. Borate and fluoride matrices doped with Dy 3+/Tb 3+ couples of ions are selected according to the position of the 5d band of dysprosium as green emitters.

Theory of nitrogen doping of carbon nanoribbons: Edge effects

DOE PAGES

Jiang, Jie; Turnbull, Joseph; Lu, Wenchang; ...

2012-01-01

Nitrogen doping of a carbon nanoribbon is profoundly affected by its one-dimensional character, symmetry, and interaction with edge states. Using state-of-the-art ab initio calculations, including hybrid exact-exchange density functional theory, we find that, for N-doped zigzag ribbons, the electronic properties are strongly dependent upon sublattice effects due to the non-equivalence of the two sublattices. For armchair ribbons, N-doping effects are different depending upon the ribbon family: for families 2 and 0, the N-induced levels are in the conduction band, while for family 1 the N levels are in the gap. In zigzag nanoribbons, nitrogen close to the edge is amore » deep center, while in armchair nanoribbons its behavior is close to an effective-mass-like donor with the ionization energy dependent on the value of the band gap. In chiral nanoribbons, we find strong dependence of the impurity level and formation energy upon the edge position of the dopant, while such site-specificity is not manifested in the magnitude of the magnetization.« less

Cobalt-doped nanohydroxyapatite: synthesis, characterization, antimicrobial and hemolytic studies

NASA Astrophysics Data System (ADS)

Tank, Kashmira P.; Chudasama, Kiran S.; Thaker, Vrinda S.; Joshi, Mihir J.

2013-05-01

Hydroxyapatite (Ca10(PO4)6(OH)2; HAP) is a major mineral component of the calcified tissues, and it has various applications in medicine and dentistry. In the present investigation, cobalt-doped hydroxyapatite (Co-HAP) nanoparticles were synthesized by surfactant-mediated approach and characterized by different techniques. The EDAX was carried out to estimate the amount of doping in Co-HAP. The transmission electron microscopy result suggested the transformation of morphology from needle shaped to spherical type on increasing the doping concentration. The powder XRD study indicated the formation of a new phase of brushite for higher concentration of cobalt. The average particle size and strain were calculated using Williamson-Hall analysis. The average particle size was found to be 30-60 nm. The FTIR study confirmed the presence of various functional groups in the samples. The antimicrobial activity was evaluated against four organisms Pseudomonas aeruginosa and Shigella flexneri as Gram negative as well as Micrococcus luteus and Staphylococcus aureus as Gram positive. The hemolytic test result suggested that all samples were non-hemolytic. The photoluminescence study was carried out to identify its possible applicability as a fluorescent probe.

Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

DOE PAGES

Yoo, Jinkyoung; Ahmed, Towfiq; Tang, Wei; ...

2017-09-05

ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. Here, we report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO.more » Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. Lastly, the reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.« less

Study of morphology effects on magnetic interactions and band gap variations for 3d late transition metal bi-doped ZnO nanostructures by hybrid DFT calculations

NASA Astrophysics Data System (ADS)

Datta, Soumendu; Kaphle, Gopi Chandra; Baral, Sayan; Mookerjee, Abhijit

2015-08-01

Using density functional theory (DFT) based electronic structure calculations, the effects of morphology of semiconducting nanostructures on the magnetic interaction between two magnetic dopant atoms as well as a possibility of tuning band gaps have been studied in the case of the bi-doped (ZnO)24 nanostructures with the impurity dopant atoms of the 3d late transition metals—Mn, Fe, Co, Ni, and Cu. To explore the morphology effect, three different structures of the host (ZnO)24 nano-system, having different degrees of spatial confinement, have been considered: a two dimensional nanosheet, a one dimensional nanotube, and a finite cage-shaped nanocluster. The present study employs hybrid density functional theory to accurately describe the electronic structure of all the systems. It is shown here that the magnetic coupling between the two dopant atoms remains mostly anti-ferromagnetic in the course of changing the morphology from the sheet geometry to the cage-shaped geometry of the host systems, except for the case of energetically most stable bi-Mn doping, which shows a transition from ferromagnetic to anti-ferromagnetic coupling with decreasing aspect ratio of the host system. The effect of the shape change, however, has a significant effect on the overall band gap variations of both the pristine as well as all the bi-doped systems, irrespective of the nature of the dopant atoms and provides a means for easy tunability of their optoelectronic properties.

Addict to win? A different approach to doping.

PubMed

D'Angelo, Carlos; Tamburrini, Claudio

2010-11-01

Traditionally the doping debate has been dominated by those who want to see doping forbidden (the prohibitionist view) and those who want to see it permitted (the ban abolitionist view). In this article, the authors analyse a third position starting from the assertion that doping use is a symptom of the paradigm of highly competitive elite sports, in the same way as addictions reflect current social paradigms in wider society. Based upon a conceptual distinction between occasional use, habitual use and addiction, and focusing on the physical and/or mental dependency caused by the addictive use of a certain drug, we argue that marihuana, stimulants and anabolic steroid abuse--the most frequently detected substances in doping tests--satisfies at least one, often both, of these conditions. A conclusion to be drawn from the authors' arguments is that the prohibitionist view is inappropriate for dealing with doping, as the severe sanctions attached to it will cut the doper off her/his social and professional environment, thereby risking reinforcing her/his addictive conduct. But the ban abolitionist view seems inappropriate as well. At first sight, it seems neither rational nor humane not to intervene when confronted with conduct which is highly harmful for the individual and upon which she has reduced or no control whatsoever. Instead the authors' proposal will be to contextualise dopers' conduct within sport healthcare and see it strictly in relation to each athlete's personal background. Developing preventive programmes--implemented through person-tailored counselling and eventually treatment, rather than severe sanctions or the mere lifting of the ban--seems to be a more reasonable, and probably more efficient, way of conducting 'the war against doping'.

Growth and electrical properties of (Mn,F) co-doped 0.92Pb(Zn 1/3Nb 2/3)O 3-0.08PbTiO 3 single crystal

NASA Astrophysics Data System (ADS)

Zhang, Shujun; Lebrun, Laurent; Randall, Clive A.; Shrout, Thomas R.

2004-06-01

The growth and characterization of (Mn,F) doped Pb(Zn 1/3Nb 2/3)O 3-PbTiO 3 (PZNT) single crystals are reported in this paper. The typical single crystal obtained is up to 30 mm size with dark brown color. The crystal lattice parameters of doped PZNT crystal are slightly decreased compared to the pure one. The room temperature dielectric permittivity along <0 0 1> direction is about 6000, which is lower than that of the pure PZNT8 because of the dopants. The Curie temperature of the doped crystal is about 180°C while the ferroelectric phase transition temperature is around 100°C, which are higher than those of the pure PZNT8 single crystal. The remnant polarization and coercive field of <0 0 1> oriented doped crystal measured at 1 Hz and 10 kV/cm field are about 27 μC/cm 2 and 4.2 kV/cm, respectively. The room temperature mechanical quality factor is ˜300. Piezoelectric coefficient of <0 0 1> oriented doped crystal is higher than 3500 pC/N and the longitudinal electromechanical coupling factor is larger than 93%. The piezoelectric properties of doped PZNT single crystal with temperature and orientations are also reported in this paper. The valence state of the manganese dopant was determined by electron spin resonance, indicating no Mn 4+ in the crystals, suggesting the valence of manganese ions in PZNT crystals may be 2+, which acts as a hardener, stabilizes the domain wall and pins the domain wall motion, on the other hand, the dopant will enter Ti 4+ position, shifting the crystal composition to higher PT content.

The influence of A-site rare-earth for barium substitution on the chemical structure and ferroelectric properties of BZT thin films

NASA Astrophysics Data System (ADS)

Ostos, C.; Martínez-Sarrión, M. L.; Mestres, L.; Delgado, E.; Prieto, P.

2009-10-01

Rare-earth ( RE) doped Ba(Zr,Ti)O 3 (BZT) thin films were prepared by rf-magnetron sputtering from a Ba 0.90Ln0.067Zr 0.09Ti 0.91O 3 ( Ln=La, Nd) target. The films were deposited at a substrate temperature of 600 °C in a high oxygen pressure atmosphere. X-ray diffraction (XRD) patterns of RE-BZT films revealed a <001> epitaxial crystal growth on Nb-doped SrTiO 3, <001> and <011> growth on single-crystal Si, and a <111>-preferred orientation on Pt-coated Si substrates. Scanning electron microscopy (SEM) showed uniform growth of the films deposited, along with the presence of crystals of about half-micron size on the film's surface. Transmission electron microscopy (TEM) evidenced high crystalline films with thicknesses of about 100 nm for 30 min of sputtering. Electron-probe microanalysis (EPMA) corroborated the growth rate (3.0-3.5 nm/min) of films deposited on Pt-coated Si substrates. X-ray photoelectron spectroscopy (XPS), in depth profile mode, showed variations in photoelectron Ti 2 p doublet positions at lower energies with spin-orbital distances characteristic of BaTiO 3-based compounds. The XPS analysis revealed that lanthanide ions positioned onto the A-site of the BZT-perovskite structure increasing the MO 6-octahedra distortion ( M=Ti, Zr) and, thereby, modifying the Ti-O binding length. Polarization-electric field hysteresis loops on Ag/ RE-doped BZT/Pt capacitor showed good ferroelectric behavior and higher remanent polarization values than corresponding non-doped system.

Optical Properties of the Organic Semiconductor Polyacetylene.

NASA Astrophysics Data System (ADS)

Feldblum, Avinoam Y.

Polyacetylene is the prototype conducting organic polymer. In its pristine form, it exhibits physical properties closely resembling those of a conventional inorganic semiconductor. When chemically or electrochemically doped, the polymer undergoes a semiconductor-metal transition. The nature of lightly doped polyacetylene, prior to the metallic transition, is not well understood. In addition, there still remain questions as to the nature of the pristine film itself. In this thesis, optical absorption experiments were performed in order to gain a clearer understanding of the electronic structure of polyacetylene. To attain this understanding, opto-electrochemical spectroscopy (OES), a new technique combining optical measurements with in situ electrochemical doping was developed. Optical absorption measurements were performed on cis-(CH)(,x) in order to examine doping induced isomerization. When doped to metallic levels followed by compensation or undoping, cis-(CH)(,x) isomerizes to trans-(CH)(,x). Using OES, one finds that with light doping, the main contribution to the midgap transition comes from the small trans content in the film. Electrochemical cycling shows isomerization beginning below y = 0.01 and repeated cycling to different concentrations indicate that the total isomerization depends on the value of the highest dopant level. These results suggest that upon light doping, the trans-(CH)(,x) dopes first, followed by enough cis-(CH)(,x) isomerizing to accomodate the injected charge. A quantitative study of the effects of doping on the absorption coefficient of trans-(CH)(,x) was carried out using OES. Upon doping, the interband absorption uniformly decreases over an extremely wide range. A strong absorbtion appeared at mid-gap; its oscillator strength increasing linearly with dopant concentration. A weak shoulder is observed on the interband edge which grows at low concentrations and then decreases to zero by 4%. These results agree with the predictions of the soliton model--the midgap absorption is identified as a soliton level and the shoulder as a transition between localized polaron levels. The pressure dependence of the photoabsorption of cis- and trans-(CH)(,x) has been measured. In both cases the bandedge shifted to a lower energy, and the value of the peak absorption coefficient decreased. These results suggest that the observed bandwidth is due primarily to the transverse transfer integral.

Effect of doping on the forward current-transport mechanisms in a metal-insulator-semiconductor contact to INP:ZN grown by metal organic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Cova, P.; Singh, A.; Medina, A.; Masut, R. A.

1998-04-01

A detailed study of the effect of doping density on current transport was undertaken in Au metal-insulator-semiconductor (MIS) contacts fabricated on Zn-doped InP layers grown by metal organic vapor phase epitaxy. A recently developed method was used for the simultaneous analysis of the current-voltage ( I- V) and capacitance-voltage ( C- V) characteristics in an epitaxial MIS diode which brings out the contributions of different current-transport mechanisms to the total current. I- V and high-frequency C- V measurements were performed on two MIS diodes at different temperatures in the range 220-395 K. The barrier height at zero bias of Au/InP:Zn MIS diodes, φ0 (1.06 V±10%), was independent both of the Zn-doping density and of the surface preparation. The interface state density distribution Nss as well as the thickness of the oxide layer (2.2±15% nm) unintentionally grown before Au deposition were independent of the Zn-doping concentration in the range 10 16< NA<10 17 cm -3; not so the effective potential barrier χ of the insulator layer and the density of the mid-gap traps. χ was much lower for the highly-doped sample. Our results indicate that at high temperatures, independent of the Zn-doping concentration, the interfacial layer-thermionic (ITE) and interfacial layer-diffusion (ID) mechanisms compete with each other to control the current transport. At intermediate temperatures, however, ITE and ID will no longer be the only dominant mechanisms in the MIS diode fabricated on the highly-doped sample. In this case, the assumption of a generation-recombination current permits a better fit to the experimental data. Analysis of the data suggests that the generation-recombination current, observed only in the highly-doped sample, is associated with an increase in the Zn-doping density. From the forward I- V data for this diode we obtained the energy level (0.60 eV from the conduction band) for the most effective recombination centers.

Bipolar Electrode Array Embedded in a Polymer Light-Emitting Electrochemical Cell.

PubMed

Gao, Jun; Chen, Shulun; AlTal, Faleh; Hu, Shiyu; Bouffier, Laurent; Wantz, Guillaume

2017-09-20

A linear array of aluminum discs is deposited between the driving electrodes of an extremely large planar polymer light-emitting electrochemical cell (PLEC). The planar PLEC is then operated at a constant bias voltage of 100 V. This promotes in situ electrochemical doping of the luminescent polymer from both the driving electrodes and the aluminum discs. These aluminum discs function as discrete bipolar electrodes (BPEs) that can drive redox reactions at their extremities. Time-lapse fluorescence imaging reveals that p- and n-doping that originated from neighboring BPEs can interact to form multiple light-emitting p-n junctions in series. This provides direct evidence of the working principle of bulk homojunction PLECs. The propagation of p-doping is faster from the BPEs than from the positive driving electrode due to electric field enhancement at the extremities of BPEs. The effect of field enhancement and the fact that the doping fronts only need to travel the distance between the neighboring BPEs to form a light-emitting junction greatly reduce the response time for electroluminescence in the region containing the BPE array. The near simultaneous formation of multiple light-emitting p-n junctions in series causes a measurable increase in cell current. This indicates that the region containing a BPE is much more conductive than the rest of the planar cell despite the latter's greater width. The p- and n-doping originating from the BPEs is initially highly confined. Significant expansion and divergence of doping occurred when the region containing the BPE array became more conductive. The shape and direction of expanded doping strongly suggest that the multiple light-emitting p-n junctions, formed between and connected by the array of metal BPEs, have functioned as a single rod-shaped BPE. This represents a new type of BPE that is formed in situ and as a combination of metal, doped polymers, and forward-biased p-n junctions connected in series.

Crossover between weak anti-localization and weak localization by Co doping and annealing in gapless PbPdO{sub 2} and spin gapless Co-doped PbPdO{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choo, S. M.; Lee, K. J.; Park, S. M.

2015-04-27

The magnetotransport properties of Pb(Pd,Co)O{sub 2} and PbPdO{sub 2} thin films were investigated. In magnetoconductance curves, we observed a crossover between weak anti-localization (WAL) and weak localization (WL) depending on the annealing and Co doping in PbPdO{sub 2} thin films. For the Pb(Pd,Co)O{sub 2} case showing WAL signals, the ex-situ annealing weakens the Pd-O hybridization by stabilizing Co{sup 3+} states and generating Pd{sup 1+} states, instead of Pd{sup 2+}, so that the spin-orbit coupling (SOC) strength is significantly reduced. It causes the dominant magnetotransport mechanism change from WAL to WL. This annealing effect is compared with the PbPdO{sub 2} case,more » which possesses WL signals. The annealing process stabilizes the oxygen states and enhances the Pd-O hybridization, and consequently the SOC strength is enhanced. Our experimental results are well explained by the Hikami-Larkin-Nagaoka theory in terms of two important physical parameters; SOC strength-related α and inelastic scattering length l{sub ϕ}.« less

Tunable reactivity of supported single metal atoms by impurity engineering of the MgO(001) support.

PubMed

Pašti, Igor A; Johansson, Börje; Skorodumova, Natalia V

2018-02-28

Development of novel materials may often require a rational use of high price components, like noble metals, in combination with the possibility to tune their properties in a desirable way. Here we present a theoretical DFT study of Au and Pd single atoms supported by doped MgO(001). By introducing B, C and N impurities into the MgO(001) surface, the interaction between the surface and the supported metal adatoms can be adjusted. Impurity atoms act as strong binding sites for Au and Pd adatoms and can help to produce highly dispersed metal particles. The reactivity of metal atoms supported by doped MgO(001), as probed by CO, is altered compared to their counterparts on pristine MgO(001). We find that Pd atoms on doped MgO(001) are less reactive than on perfect MgO(001). In contrast, Au adatoms bind CO much more strongly when placed on doped MgO(001). In the case of Au on N-doped MgO(001) we find that charge redistribution between the metal atom and impurity takes place even when not in direct contact, which enhances the interaction of Au with CO. The presented results suggest possible ways for optimizing the reactivity of oxide supported metal catalysts through impurity engineering.

Defect phase diagram for doping of Ga 2O 3

DOE PAGES

Lany, Stephan

2018-04-01

For the case of n-type doping of β-Ga 2O 3 by group 14 dopants (C, Si, Ge, Sn), a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T), O partial pressures (pO 2), and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor) center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association ofmore » dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO 2) conditions. Considering further the stability constraints due to sublimation of molecular Ga 2O, specific predictions of optimized pO 2 and Si dopant concentrations are given. To conclude, the incomplete passivation of dopant-defect complexes in β-Ga 2O 3 suggests a design rule for metastable doping above the solubility limit.« less

Magnetic core mesoporous silica nanoparticles doped with dacarbazine and labelled with 99mTc for early and differential detection of metastatic melanoma by single photon emission computed tomography.

PubMed

Portilho, Filipe Leal; Helal-Neto, Edward; Cabezas, Santiago Sánchez; Pinto, Suyene Rocha; Dos Santos, Sofia Nascimento; Pozzo, Lorena; Sancenón, Félix; Martínez-Máñez, Ramón; Santos-Oliveira, Ralph

2018-02-27

Cancer is responsible for more than 12% of all causes of death in the world, with an annual death rate of more than 7 million people. In this scenario melanoma is one of the most aggressive ones with serious limitation in early detection and therapy. In this direction we developed, characterized and tested in vivo a new drug delivery system based on magnetic core-mesoporous silica nanoparticle that has been doped with dacarbazine and labelled with technetium 99 m to be used as nano-imaging agent (nanoradiopharmaceutical) for early and differential diagnosis and melanoma by single photon emission computed tomography. The results demonstrated the ability of the magnetic core-mesoporous silica to be efficiently (>98%) doped with dacarbazine and also efficiently labelled with 99mTc (technetium 99 m) (>99%). The in vivo test, using inducted mice with melanoma, demonstrated the EPR effect of the magnetic core-mesoporous silica nanoparticles doped with dacarbazine and labelled with technetium 99 metastable when injected intratumorally and the possibility to be used as systemic injection too. In both cases, magnetic core-mesoporous silica nanoparticles doped with dacarbazine and labelled with technetium 99 metastable showed to be a reliable and efficient nano-imaging agent for melanoma.

High-T c superconductivity in undoped ThFeAsN.

PubMed

Shiroka, T; Shang, T; Wang, C; Cao, G-H; Eremin, I; Ott, H-R; Mesot, J

2017-07-31

Unlike the widely studied ReFeAsO series, the newly discovered iron-based superconductor ThFeAsN exhibits a remarkably high critical temperature of 30 K, without chemical doping or external pressure. Here we investigate in detail its magnetic and superconducting properties via muon-spin rotation/relaxation and nuclear magnetic resonance techniques and show that ThFeAsN exhibits strong magnetic fluctuations, suppressed below ~35 K, but no magnetic order. This contrasts strongly with the ReFeAsO series, where stoichiometric parent materials order antiferromagnetically and superconductivity appears only upon doping. The ThFeAsN case indicates that Fermi-surface modifications due to structural distortions and correlation effects are as important as doping in inducing superconductivity. The direct competition between antiferromagnetism and superconductivity, which in ThFeAsN (as in LiFeAs) occurs at already zero doping, may indicate a significant deviation of the s-wave superconducting gap in this compound from the standard s ± scenario.Exploring the interplay between the superconducting gap and the antiferromagnetic phase in Fe-based superconductors remains an open issue. Here, the authors show that Fermi-surface modifications by means of structural distortions and correlation effects are as important as doping in inducing superconductivity in undoped ThFeAsN.

One-Step Synthesis of B/N Co-doped Graphene as Highly Efficient Electrocatalyst for the Oxygen Reduction Reaction: Synergistic Effect of Impurities.

PubMed

Mazánek, Vlastimil; Matějková, Stanislava; Sedmidubský, David; Pumera, Martin; Sofer, Zdeněk

2018-01-19

In the last decade, numerous studies of graphene doping by various metal and nonmetal elements have been done in order to obtain tailored properties, such as non-zero band gap, electrocatalytic activity, or controlled optical properties. From nonmetal elements, boron and nitrogen were the most studied dopants. Recently, it has been shown that in some cases the enhanced electrocatalytic activity of graphene and its derivatives can be attributed to metal impurities rather than to nonmetal elements. In this paper, we investigated the electrocatalytical properties of B/N co-doped graphene with respect to the content of metallic impurities introduced by the synthesis procedures. For this purpose, a permanganate (Hummers) and a chlorate (Hofmann) route were used for the preparation of the starting graphene oxides (GO). The GO used for the synthesis of B/N co-doped graphene had significantly difference compositions of oxygen functionalities as well as metallic impurities introduced by the different synthetic procedures. We performed a detailed structural and chemical analysis of the doped graphene samples to correlate their electrocatalytic activity with the concentration of incorporated boron and nitrogen as well as metallic impurities. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

First-principles study of Sr2Ir1-xRhxO4: charge transfer, spin-orbit coupling change, and the metal-insulator transition

NASA Astrophysics Data System (ADS)

Sim, Jae-Hoon; Kim, Heung-Sik; Han, Myung Joon

2015-03-01

Using first-principles density functional theory (DFT) calculations, we investigated the electronic structure of Rh-doped iridate, Sr2Ir1-xRhxO4 for which the doping (x) dependent metal-insulator transition (MIT) has been reported experimentally and the controversial discussion developed regarding the origin of this transition. Our DFT+U calculation shows that the value of < L . S > remains largely intact over the entire doping range considered here (x = 0 . 0 , 0 . 125 , 0 . 25 , 0 . 50 , 0 . 75 , and 1 . 0) in good agreement with the branching ratio measured by x-ray absorption spectroscopy. Also contrary to a previous picture to explain MIT based on the charge transfer between the transition-metal sites, our calculation clearly shows that those sites remain basically isoelectronic while the impurity bands of predominantly rhodium character are introduced near the Fermi level. As the doping increases, this impurity band overlaps with lower Hubbard band of iridium, leading to metal-insulator transition. The results will be discussed with comparison to the case of Ru doping. Computational resources were suported by The National Institute of Supercomputing and Networking/Korea Institute of Science and Technology Information with supercomputing resources including technical spport (Grant No. KSC-2013-C2-23).

Probing the structural evolution of ruthenium doped germanium clusters: Photoelectron spectroscopy and density functional theory calculations

PubMed Central

Jin, Yuanyuan; Lu, Shengjie; Hermann, Andreas; Kuang, Xiaoyu; Zhang, Chuanzhao; Lu, Cheng; Xu, Hongguang; Zheng, Weijun

2016-01-01

We present a combined experimental and theoretical study of ruthenium doped germanium clusters, RuGen− (n = 3–12), and their corresponding neutral species. Photoelectron spectra of RuGen− clusters are measured at 266 nm. The vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) are obtained. Unbiased CALYPSO structure searches confirm the low-lying structures of anionic and neutral ruthenium doped germanium clusters in the size range of 3 ≤ n ≤ 12. Subsequent geometry optimizations using density functional theory (DFT) at PW91/LANL2DZ level are carried out to determine the relative stability and electronic properties of ruthenium doped germanium clusters. It is found that most of the anionic and neutral clusters have very similar global features. Although the global minimum structures of the anionic and neutral clusters are different, their respective geometries are observed as the low-lying isomers in either case. In addition, for n > 8, the Ru atom in RuGen−/0 clusters is absorbed endohedrally in the Ge cage. The theoretically predicted vertical and adiabatic detachment energies are in good agreement with the experimental measurements. The excellent agreement between DFT calculations and experiment enables a comprehensive evaluation of the geometrical and electronic structures of ruthenium doped germanium clusters. PMID:27439955

Defect phase diagram for doping of Ga 2O 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lany, Stephan

For the case of n-type doping of β-Ga 2O 3 by group 14 dopants (C, Si, Ge, Sn), a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T), O partial pressures (pO 2), and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor) center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association ofmore » dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO 2) conditions. Considering further the stability constraints due to sublimation of molecular Ga 2O, specific predictions of optimized pO 2 and Si dopant concentrations are given. To conclude, the incomplete passivation of dopant-defect complexes in β-Ga 2O 3 suggests a design rule for metastable doping above the solubility limit.« less

Surface plasmon enhanced SWIR absorption at the ultra n-doped substrate/PbSe nanostructure layer interface

NASA Astrophysics Data System (ADS)

Wittenberg, Vladimir; Rosenblit, Michael; Sarusi, Gabby

2017-08-01

This work presents simulation results of the plasmon enhanced absorption that can be achieved in the short wavelength infrared (SWIR - 1200 nm to 1800 nm) spectral range at the interface between ultra-heavily doped substrates and a PbSe nanostructure non-epitaxial growth absorbing layer. The absorption enhancement simulated in this study is due to surface plasmon polariton (SPP) excitation at the interface between these ultra-heavily n-doped GaAs or GaN substrates, which are nearly semimetals to SWIR light, and an absorption layer made of PbSe nano-spheres or nano-columns. The ultra-heavily doped GaAs or GaN substrates are simulated as examples, based on the Drude-Lorentz permittivity model. In the simulation, the substrates and the absorption layer were patterned jointly to forma blazed lattice, and then were back-illuminated using SWIR with a central wavelength of 1500 nm. The maximal field enhancement achieved was 17.4 with a penetration depth of 40 nm. Thus, such architecture of an ultra-heavily doped semiconductor and infrared absorbing layer can further increase the absorption due to the plasmonic enhanced absorption effect in the SWIR spectral band without the need to use a metallic layer as in the case of visible light.

Electronic structure of O-doped SiGe calculated by DFT + U method

NASA Astrophysics Data System (ADS)

Zhao, Zong-Yan; Yang, Wen; Yang, Pei-Zhi

2016-12-01

To more in depth understand the doping effects of oxygen on SiGe alloys, both the micro-structure and properties of O-doped SiGe (including: bulk, (001) surface, and (110) surface) are calculated by DFT + U method in the present work. The calculated results are as follows. (i) The (110) surface is the main exposing surface of SiGe, in which O impurity prefers to occupy the surface vacancy sites. (ii) For O interstitial doping on SiGe (110) surface, the existences of energy states caused by O doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers. (iii) The finding about decreased surface work function of O-doped SiGe (110) surface can confirm previous experimental observations. (iv) In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-SiGe-based solar cells in the future. Project supported by the Natural Science Foundation of Yunnan Province, China (Grant No. 2015FB123), the 18th Yunnan Province Young Academic and Technical Leaders Reserve Talent Project, China (Grant No. 2015HB015), and the National Natural Science Foundation of China (Grant No. U1037604).

Spin Dynamics in the electron-doped high-Tc superconductors Pr0.88LaCe0.12CuO4-δ

NASA Astrophysics Data System (ADS)

Dai, Pengcheng

2007-03-01

We briefly review results of recent neutron scattering experiments designed to probe the evolution of antiferromagnetic (AF) order and spin dynamics in the electron- doped Pr0.88LaCe0.12CuO4-δ (PLCCO) as the system is tuned from its as-grown non-superconducting AF state into an optimally doped superconductor (Tc = 27.5 K) without static AF order [1-3]. For under doped materials, a quasi-two- dimensional spin-density wave was found to coexist with three- dimensional AF order and superconductivity. In addition, the low-energy spin excitations follow Bose statistics. In the case of optimally doped material, we have discovered a magnetic resonance intimately related to superconductivity analogous to the resonance in hole-doped materials. On the other hand, the low energy spin excitations have very weak temperature dependence and do not follow Bose statistics, in sharp contrast to the as-grown nonsuperconducting materials. 1 Stephen D. Wilson, Pengcheng Dai, Shiliang Li, Songxue Chi, H. J. Kang, and J. W. Lynn, Nature (London) 442, 59 (2006). 2 Stephen D. Wilson, Shiliang Li, Hyungje Woo, Pengcheng Dai, H. A. Mook, C. D. Frost, S. Komiya, and Y. Ando, Phys. Rev. Lett. 96, 157001 (2006). 3. Stephen D. Wilson, Shiliang Li, Pengcheng Dai, Wei Bao, J. H. Chung, H. J. Kang, S.-H. Lee, S. Komiya, and Y. Ando, Phys. Rev. B 74, 144514 (2006).

Effect of Ag doping on the structural, electrical and optical properties of ZnO grown by MOCVD at different substrate temperatures

NASA Astrophysics Data System (ADS)

Ievtushenko, A.; Karpyna, V.; Eriksson, J.; Tsiaoussis, I.; Shtepliuk, I.; Lashkarev, G.; Yakimova, R.; Khranovskyy, V.

2018-05-01

ZnO films and nanostructures were deposited on Si substrates by MOCVD using single source solid state zinc acetylacetonate (Zn(AA)) precursor. Doping by silver was realized in-situ via adding 1 and 10 wt. % of Ag acetylacetonate (Ag(AA)) to zinc precursor. Influence of Ag on the microstructure, electrical and optical properties of ZnO at temperature range 220-550 °C was studied by scanning, transmission electron and Kelvin probe force microscopy, photoluminescence and four-point probe electrical measurements. Ag doping affects the ZnO microstructure via changing the nucleation mode into heterogeneous and thus transforming the polycrystalline films into a matrix of highly c-axis textured hexagonally faceted nanorods. Increase of the work function value from 4.45 to 4.75 eV was observed with Ag content increase, which is attributed to Ag behaviour as a donor impurity. It was observed, that near-band edge emission of ZnO NS was enhanced with Ag doping as a result of quenching deep-level emission. Upon high doping of ZnO by Ag it tends to promote the formation of basal plane stacking faults defect, as it was observed by HR TEM and PL study in the case of 10 wt.% of Ag. Based on the results obtained, it is suggested that NS deposition at lower temperatures (220-300 °C) is more favorable for p-type doping of ZnO.