Effect of sulfur hexafluoride gas and post-annealing treatment for inductively coupled plasma etched barium titanate thin films

PubMed Central

2014-01-01

Aerosol deposition- (AD) derived barium titanate (BTO) micropatterns are etched via SF6/O2/Ar plasmas using inductively coupled plasma (ICP) etching technology. The reaction mechanisms of the sulfur hexafluoride on BTO thin films and the effects of annealing treatment are verified through X-ray photoelectron spectroscopy (XPS) analysis, which confirms the accumulation of reaction products on the etched surface due to the low volatility of the reaction products, such as Ba and Ti fluorides, and these residues could be completely removed by the post-annealing treatment. The exact peak positions and chemicals shifts of Ba 3d, Ti 2p, O 1 s, and F 1 s are deduced by fitting the XPS narrow-scan spectra on as-deposited, etched, and post-annealed BTO surfaces. Compared to the as-deposited BTOs, the etched Ba 3d 5/2 , Ba 3d 3/2 , Ti 2p 3/2 , Ti 2p 1/2 , and O 1 s peaks shift towards higher binding energy regions by amounts of 0.55, 0.45, 0.4, 0.35, and 0.85 eV, respectively. A comparison of the as-deposited film with the post-annealed film after etching revealed that there are no significant differences in the fitted XPS narrow-scan spectra except for the slight chemical shift in the O 1 s peak due to the oxygen vacancy compensation in O2-excessive atmosphere. It is inferred that the electrical properties of the etched BTO film can be restored by post-annealing treatment after the etching process. Moreover, the relative permittivity and loss tangent of the post-annealed BTO thin films are remarkably improved by 232% and 2,695%, respectively. PMID:25249824

Effect of Post-deformation Annealing Treatment on the Microstructural Evolution of a Cold-Worked Corrosion-Resistant Superalloy (CRSA) Steel

NASA Astrophysics Data System (ADS)

Mirzaei, A.; Zarei-Hanzaki, A.; Mohamadizadeh, A.; Lin, Y. C.

2018-03-01

The post-deformation annealing treatments of a commercial cold-worked corrosion-resistant superalloy steel (Sanicro 28 steel) were carried out at different temperatures in the range of 900-1100 °C for different holding durations of 5, 10, and 15 min. The effects of post-deformation annealing time and temperature on the microstructural evolution and subsequent mechanical properties of the processed Sanicro 28 steel were investigated. The observations indicated that twin-twin hardening in cold deformation condition mainly correlates with abundant nucleation of mechanical twins in multiple directions resulting in considerable strain hardening behavior. Microstructural investigations showed that the static recrystallization takes place after isothermal holding at 900 °C for 5 min. Increasing the annealing temperature from 900 to 1050 °C leads to recrystallization development and grain refinement in the as-recrystallized state. In addition, an increase in annealing duration from 5 to 15 min leads to subgrain coarsening and subsequently larger recrystallized grains size. The occurrence of large proportion of the grain refinement, which is achieved in the first annealing stage at 1050 °C after 5 min, is considered as the main factor for the maximum elongation at this stage.

Rapid and Checkable Electrical Post-Treatment Method for Organic Photovoltaic Devices

PubMed Central

Park, Sangheon; Seo, Yu-Seong; Shin, Won Suk; Moon, Sang-Jin; Hwang, Jungseek

2016-01-01

Post-treatment processes improve the performance of organic photovoltaic devices by changing the microscopic morphology and configuration of the vertical phase separation in the active layer. Thermal annealing and solvent vapor (or chemical) treatment processes have been extensively used to improve the performance of bulk-heterojunction (BHJ) organic photovoltaic (OPV) devices. In this work we introduce a new post-treatment process which we apply only electrical voltage to the BHJ-OPV devices. We used the commercially available P3HT [Poly(3-hexylthiophene)] and PC61BM (Phenyl-C61-Butyric acid Methyl ester) photovoltaic materials as donor and acceptor, respectively. We monitored the voltage and current applied to the device to check for when the post-treatment process had been completed. This electrical treatment process is simpler and faster than other post-treatment methods, and the performance of the electrically treated solar cell is comparable to that of a reference (thermally annealed) device. Our results indicate that the proposed treatment process can be used efficiently to fabricate high-performance BHJ-OPV devices. PMID:26932767

Micro-cutting of silicon implanted with hydrogen and post-implantation thermal treatment

NASA Astrophysics Data System (ADS)

Jelenković, Emil V.; To, Suet; Sundaravel, B.; Xiao, Gaobo; Huang, Hu

2016-07-01

It was reported that non-amorphizing implantation by hydrogen has a potential in improving silicon machining. Post-implantation high-temperature treatment will affect implantation-induced damage, which can have impact on silicon machining. In this article, a relation of a thermal annealing of hydrogen implanted in silicon to micro-cutting experiment is investigated. Hydrogen ions were implanted into 4″ silicon wafers with 175 keV, 150 keV, 125 keV and doses of 2 × 1016 cm-2, 2 × 1016 cm-2 and 3 × 1016 cm-2, respectively. In this way, low hydrogen atom-low defect concentration was created in the region less than ~0.8 μm deep and high hydrogen atom-high defect concentration was obtained at silicon depth of ~0.8-1.5 μm. The post-implantation annealing was carried out at 300 and 400 °C in nitrogen for 1 h. Physical and electrical properties of implanted and annealed samples were characterized by secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD), Rutherford backscattering (RBS) and nanoindentation. Plunge cutting experiment was carried out in <110> and <100> silicon crystal direction. The critical depth of cut and cutting force were monitored and found to be influenced by the annealing. The limits of hydrogen implantation annealing contribution to the cutting characteristics of silicon are discussed in light of implantation process and redistribution of hydrogen and defects generation during annealing process.

Effect of Annealing on Microstructures and Hardening of Helium-Hydrogen-Implanted Sequentially Vanadium Alloys

NASA Astrophysics Data System (ADS)

Jiang, Shaoning; Wang, Zhiming

2018-03-01

The effect of post-irradiation annealing on the microstructures and mechanical properties of V-4Cr-4Ti alloys was studied. Helium-hydrogen-irradiated sequentially V-4Cr-4Ti alloys at room temperature (RT) were undergone post-irradiation annealing at 450 °C over periods of up to 30 h. These samples were carried out by high-resolution transmission electron microscopy (HRTEM) observation and nanoindentation test. With the holding time, large amounts of point defects produced during irradiation at RT accumulated into large dislocation loops and then dislocation nets which promoted the irradiation hardening. Meanwhile, bubbles appeared. As annealing time extended, these bubbles grew up and merged, and finally broke up. In the process, the size of bubbles increased and the number density decreased. Microstructural changes due to post-irradiation annealing corresponded to the change of hardening. Dislocations and bubbles are co-contributed to irradiation hardening. With the holding time up to 30 h, the recovery of hardening is not obvious. The phenomenon was discussed by dispersed barrier hardening model and Friedel-Kroupa-Hirsch relationship.

Preparation of mesoporous carbon nitride structure by the dealloying of Ni/a-CN nanocomposite films

NASA Astrophysics Data System (ADS)

Zhou, Han; Shen, Yongqing; Huang, Jie; Liao, Bin; Wu, Xianying; Zhang, Xu

2018-05-01

The preparation of mesoporous carbon nitride (p-CN) structure by the selective dealloying process of Ni/a-CN nanocomposite films is investigated. The composition and structure of the Ni/a-CN nanocomposite films and porous carbon nitride (p-CN) films are determined by scan electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Phase separated structure including nickel carbide phase and the surrounding amorphous carbon nitride (a-CN) matrix are detected for the as-deposited films. Though the bulk diffusion is introduced in the film during the annealing process, the grain sizes for the post-annealed films are around 10 nm and change little comparing with the ones of the as-deposited films, which is associated with the thermostability of the CN surrounding in the film. The p-CN skeleton with its pore size around 12.5 nm is formed by etching the post-annealed films, indicative of the stability of the phase separated structure during the annealing process.

Fast wettability transition from hydrophilic to superhydrophobic laser-textured stainless steel surfaces under low-temperature annealing

NASA Astrophysics Data System (ADS)

Ngo, Chi-Vinh; Chun, Doo-Man

2017-07-01

Recently, the fabrication of superhydrophobic metallic surfaces by means of pulsed laser texturing has been developed. After laser texturing, samples are typically chemically coated or aged in ambient air for a relatively long time of several weeks to achieve superhydrophobicity. To accelerate the wettability transition from hydrophilicity to superhydrophobicity without the use of additional chemical treatment, a simple annealing post process has been developed. In the present work, grid patterns were first fabricated on stainless steel by a nanosecond pulsed laser, then an additional low-temperature annealing post process at 100 °C was applied. The effect of 100-500 μm step size of the textured grid upon the wettability transition time was also investigated. The proposed post process reduced the transition time from a couple of months to within several hours. All samples showed superhydrophobicity with contact angles greater than 160° and sliding angles smaller than 10° except samples with 500 μm step size, and could be applied in several potential applications such as self-cleaning and control of water adhesion.

Post-annealing effect on optical absorbance of hydrothermally grown zinc oxide nanorods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohar, Rahmat Setiawan; Djuhana, Dede; Imawan, Cuk

In this study, the optical absorbance of zinc oxide (ZnO) nanorods was investigated. The ZnO thin film were deposited on indium tin oxide (ITO) layers using ultrasonic spray pyrolysis (USP) method and then grown by hydrothermal method. In order to improve the optical absorbance, the ZnO nanorods were then post-annealed for one hour at three different of temperatures, namely 250, 400, and 500 °C. The X-ray diffraction (XRD) spectra and FESEM images show that the ZnO nanorods have the hexagonal wurtzite crystal structure and the increasing of post-annealing temperature resulted in the increasing of crystallite size from 38.2 nm to 48.4 nm.more » The UV-vis spectra shows that all samples of ZnO nanorods exhibited the identical sharp absorption edge at 390 nm indicating that all samples have the same bandgap. The post-annealing process seemed to decrease the optical absorbance in the region of 300-550 nm and increase the optical absorbance in the region of 550-700 nm..« less

Influence of high-pressure torsion on formation/destruction of nano-sized spinodal structures

NASA Astrophysics Data System (ADS)

Alhamidi, Ali; Edalati, Kaveh; Horita, Zenji

2018-04-01

The microstructures and hardness of Al - 30 mol.% Zn are investigated after processing by high-pressure torsion (HPT) for different numbers of revolutions, N = 1, 3, 10 or 25, as well as after post-HPT annealing at different temperatures, T = 373 K, 473 K, 573 K and 673 K. It was found that a work softening occurs by decreasing the grain size to the submicrometer level and increasing the fraction of high-angle boundaries. As a result of HPT processing, a complete decomposition of supersaturated solid solution of Zn in Al occurs and the spinodal structure is destroyed. This suggests that softening of the Al-Zn alloys after HPT is due to the decomposition of the supersaturated solid solution and destruction of spinodal decomposition. After post-HPT annealing, ultrafine-grained Al-Zn alloys show an unusual mechanical properties and its hardness increased to 187 HV. Microstructural analysis showed that the high hardness after post-HPT annealing is due to the formation of spinodal structures.

Enhancing the performance of tungsten doped InZnO thin film transistors via sequential ambient annealing

NASA Astrophysics Data System (ADS)

Park, Hyun-Woo; Song, Aeran; Kwon, Sera; Choi, Dukhyun; Kim, Younghak; Jun, Byung-Hyuk; Kim, Han-Ki; Chung, Kwun-Bum

2018-03-01

This study suggests a sequential ambient annealing process as an excellent post-treatment method to enhance the device performance and stability of W (tungsten) doped InZnO thin film transistors (WIZO-TFTs). Sequential ambient annealing at 250 °C significantly enhanced the device performance and stability of WIZO-TFTs, compared with other post-treatment methods, such as air ambient annealing and vacuum ambient annealing at 250 °C. To understand the enhanced device performance and stability of WIZO-TFT with sequential ambient annealing, we investigate the correlations between device performance and stability and electronic structures, such as band alignment, a feature of the conduction band, and band edge states below the conduction band. The enhanced performance of WIZO-TFTs with sequential ambient annealing is related to the modification of the electronic structure. In addition, the dominant mechanism responsible for the enhanced device performance and stability of WIZO-TFTs is considered to be a change in the shallow-level and deep-level band edge states below the conduction band.

Post Deformation at Room and Cryogenic Temperature Cooling Media on Severely Deformed 1050-Aluminum

NASA Astrophysics Data System (ADS)

Khorrami, M. Sarkari; Kazeminezhad, M.

2018-03-01

The annealed 1050-aluminum sheets were initially subjected to the severe plastic deformation through two passes of constrained groove pressing (CGP) process. The obtained specimens were post-deformed by friction stir processing at room and cryogenic temperature cooling media. The microstructure evolutions during mentioned processes in terms of grain structure, misorientation distribution, and grain orientation spread (GOS) were characterized using electron backscattered diffraction. The annealed sample contained a large number of "recrystallized" grains and relatively large fraction (78%) of high-angle grain boundaries (HAGBs). When CGP process was applied on the annealed specimen, the elongated grains with interior substructure were developed, which was responsible for the formation of 80% low-angle grain boundaries. The GOS map of the severely deformed specimen manifested the formation of 43% "distorted" and 51% "substructured" grains. The post deformation of severely deformed aluminum at room temperature led to the increase in the fraction of HAGBs from 20 to 60%. Also, it gave rise to the formation of "recrystallized" grains with the average size of 13 μm, which were coarser than the grains predicted by Zener-Hollomon parameter. This was attributed to the occurrence of appreciable grain growth during post deformation. In the case of post deformation at cryogenic temperature cooling medium, the grain size was decreased, which was in well agreement with the predicted grain size. The cumulative distribution of misorientation was the same for both processing routes. Mechanical properties characterizations in terms of nano-indentation and tensile tests revealed that the post deformation process led to the reduction in hardness, yield stress, and ultimate tensile strength of the severely deformed aluminum.

Manufacture of radio frequency micromachined switches with annealing.

PubMed

Lin, Cheng-Yang; Dai, Ching-Liang

2014-01-17

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

Manufacture of Radio Frequency Micromachined Switches with Annealing

PubMed Central

Lin, Cheng-Yang; Dai, Ching-Liang

2014-01-01

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V. PMID:24445415

Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

NASA Astrophysics Data System (ADS)

Esakky, Papanasam; Kailath, Binsu J.

2017-08-01

HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

Strategies for gallium removal after focused ion beam patterning of ferroelectric oxide nanostructures

NASA Astrophysics Data System (ADS)

Schilling, A.; Adams, T.; Bowman, R. M.; Gregg, J. M.

2007-01-01

As part of a study into the properties of ferroelectric single crystals at nanoscale dimensions, the effects that focused ion beam (FIB) processing can have, in terms of structural damage and ion implantation, on perovskite oxide materials has been examined, and a post-processing procedure developed to remove such effects. Single crystal material of the perovskite ferroelectric barium titanate (BaTiO3) has been patterned into thin film lamellae structures using a FIB microscope. Previous work had shown that FIB patterning induced gallium impregnation and associated creation of amorphous layers in a surface region of the single crystal material some 20 nm thick, but that both recrystallization and expulsion of gallium could be achieved through thermal annealing in air. Here we confirm this observation, but find that thermally induced gallium expulsion is associated with the formation of gallium-rich platelets on the surface of the annealed material. These platelets are thought to be gallium oxide. Etching using nitric and hydrochloric acids had no effect on the gallium-rich platelets. Effective platelet removal involved thermal annealing at 700 °C for 1 h in a vacuum followed by 1 h in oxygen, and then a post-annealing low-power plasma clean in an Ar/O atmosphere. Similar processing is likely to be necessary for the full recovery of post FIB-milled nanostructures in oxide ceramic systems in general.

Epitaxial growth of iridate pyrochlore Nd 2Ir 2O 7 films

DOE PAGES

Gallagher, J. C.; Esser, B. D.; Morrow, R.; ...

2016-02-29

Epitaxial films of the pyrochlore Nd 2Ir 2O 7 have been grown on (111)-oriented yttria-stabilized zirconia (YSZ) substrates by off-axis sputtering followed by post-growth annealing. X-ray diffraction (XRD) results demonstrate phase-pure epitaxial growth of the pyrochlore films on YSZ. Scanning transmission electron microscopy (STEM) investigation of an Nd 2Ir 2O 7 film with a short post-annealing provides insight into the mechanism for crystallization of Nd 2Ir 2O 7 during the post-annealing process. STEM images reveal clear pyrochlore ordering of Nd and Ir in the films. As a result, the epitaxial relationship between the YSZ and Nd 2Ir 2O 7 ismore » observed clearly while some interfacial regions show a thin region with polycrystalline Ir nanocrystals.« less

Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing

NASA Astrophysics Data System (ADS)

Kim, Honghyuk; Guan, Yingxin; Babcock, Susan E.; Kuech, Thomas F.; Mawst, Luke J.

2018-03-01

Laser diodes employing a strain-compensated GaAs1-xBix/GaAs1-yPy single quantum well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High resolution x-ray diffraction, room temperature photoluminescence, and real-time optical reflectance measurements during the OMVPE growth were used to find the optimum process window for the growth of the active region material. Systematic post-growth in situ thermal anneals of various lengths were carried out in order to investigate the impacts of thermal annealing on the laser device performance characteristics. While the lowest threshold current density was achieved after the thermal annealing for 30 min at 630 °C, a gradual decrease in the external differential quantum efficiency was observed as the annealing time increases. It was observed that the temperature sensitivities of the threshold current density increase while those of lasing wavelength and slope efficiency remain nearly constant with increasing annealing time. Z-contrast scanning transmission electron microscopic) analysis revealed inhomogeneous Bi distribution within the QW active region.

Bloating in (Pb0.95Sn0.05Te)0.92(PbS)0.08-0.055%PbI2 Thermoelectric Specimens as a Result of Processing Conditions

NASA Astrophysics Data System (ADS)

Ni, Jennifer E.; Case, Eldon D.; Stewart, Ryan; Wu, Chun-I.; Hogan, Timothy P.; Kanatzidis, Mercouri G.

2012-06-01

Lead chalcogenides such as (Pb0.95Sn0.05Te)0.92(PbS)0.08-0.055%PbI2 have received attention due to their encouraging thermoelectric properties. For the hot pressing (HP) and pulsed electric current sintering (PECS) techniques used in this study, decomposition reactions can generate porosity (bloating). Porosity in turn can degrade electrical, thermal, and mechanical properties. In this study, microstructural observations (scanning electron microscopy) and room-temperature elasticity measurements (resonant ultrasound spectroscopy) were used to characterize bloating generated during post-densification anneals. Although every HP specimen bloated during post-densification annealing, no bloating was observed for the PECS specimens processed from dry milled only powders. The lack of bloating for the annealed PECS specimens may be related to the electrical discharge intrinsic in the PECS process, which reportedly cleans the powder particle surfaces during densification.

Effects of surface morphology of ZnO seed layers on growth of ZnO nanostructures prepared by hydrothermal method and annealing.

PubMed

Yim, Kwang Gug; Kim, Min Su; Leem, Jae-Young

2013-05-01

ZnO nanostructures were grown on Si (111) substrates by a hydrothermal method. Prior to growing the ZnO nanostructures, ZnO seed layers with different post-heat temperatures were prepared by a spin-coating process. Then, the ZnO nanostructures were annealed at 500 degrees C for 20 min under an Ar atmosphere. Scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) were carried out at room temperature (RT) to investigate the structural and optical properties of the as-grown and annealed ZnO nanostructures. The surface morphologies of the seed layers changed from a smooth surface to a mountain chain-like structure as the post-heating temperatures increased. The as-grown and annealed ZnO nanostructures exhibited a strong (002) diffraction peak. Compared to the as-grown ZnO nanostructures, the annealed ZnO nanostructures exhibited significantly strong enhancement in the PL intensity ratio by almost a factor of 2.

Effect of post-implantation annealing on Al-N isoelectronic trap formation in silicon: Al-N pair formation and defect recovery mechanisms

NASA Astrophysics Data System (ADS)

Mori, Takahiro; Morita, Yukinori; Matsukawa, Takashi

2018-05-01

The effect of post-implantation annealing (PIA) on Al-N isoelectronic trap (IET) formation in silicon has been experimentally investigated to discuss the Al-N IET formation and implantation-induced defect recovery mechanisms. We performed a photoluminescence study, which indicated that self-interstitial clusters and accompanying vacancies are generated in the ion implantation process. It is supposed that Al and N atoms move to the vacancy sites and form stable Al-N pairs in the PIA process. Furthermore, the PIA process recovers self-interstitial clusters while transforming their atomic configuration. The critical temperature for the formation/dissociation of Al-N pairs was found to be 450 °C, with which we describe the process integration for devices utilizing Al-N IET technology.

Effect of annealing on structural, optical and electrical properties of SILAR synthesized CuO thin film

NASA Astrophysics Data System (ADS)

Das, M. R.; Mukherjee, A.; Mitra, P.

2017-05-01

Nano crystalline CuO thin films were synthesize on glass substrate using SILAR technique. The structural, optical and electrical properties of the films were carried out for as deposited as well as for films post annealed in the temperature range 300 - 500° C. The X-ray diffraction pattern shows all the films are polycrystalline in nature with monoclinic phase. The crystallite size increase and lattice strain decreases with increase of annealing temperature indicating high quality of the films for annealed films. The value of band gap decreases with increases of annealing temperature of the film. The effect of annealing temperature on ionic conductivity and activation energy to electrical conduction process are discussed.

Thermodynamics of post-growth annealing of cadmium zinc telluride nuclear radiation detectors

NASA Astrophysics Data System (ADS)

Adams, Aaron Lee

Nuclear Radiation Detectors are used for detecting, tracking, and identifying radioactive materials which emit high-energy gamma and X-rays. The use of Cadmium Zinc Telluride (CdZnTe) detectors is particularly attractive because of the detector's ability to operate at room temperature and measure the energy spectra of gamma-ray sources with a high resolution, typically less than 1% at 662 keV. While CdZnTe detectors are acceptable imperfections in the crystals limit their full market potential. One of the major imperfections are Tellurium inclusions generated during the crystal growth process by the retrograde solubility of Tellurium and Tellurium-rich melt trapped at the growth interface. Tellurium inclusions trap charge carriers generated by gamma and X-ray photons and thus reduce the portion of generated charge carriers that reach the electrodes for collection and conversion into a readable signal which is representative of the ionizing radiation's energy and intensity. One approach in resolving this problem is post-growth annealing which has the potential of removing the Tellurium inclusions and associated impurities. The goal of this project is to use experimental techniques to study the thermodynamics of Tellurium inclusion migration in post-growth annealing of CdZnTe nuclear detectors with the temperature gradient zone migration (TGZM) technique. Systematic experiments will be carried out to provide adequate thermodynamic data that will inform the engineering community of the optimum annealing parameters. Additionally, multivariable correlations that involve the Tellurium diffusion coefficient, annealing parameters, and CdZnTe properties will be analyzed. The experimental approach will involve systematic annealing experiments (in Cd vapor overpressure) on different sizes of CdZnTe crystals at varying temperature gradients ranging from 0 to 60°C/mm (used to migrate the Tellurium inclusion to one side of the crystal), and at annealing temperatures ranging from 500 to 800°C. The characterization techniques that will be used to quantify the effects of the post-growth annealing experiments include: 1) 3D infrared transmission microscopy to measure the size, distribution, and concentration of Tellurium inclusions; 2) current-voltage measurements to determine the effect of post-growth annealing on the resistivity of CdZnTe crystals; and 3) X-ray diffraction topography, available at the National Synchrotron Light Source (NSLS) facilities at Brookhaven National Laboratory (BNL), to measure the correlation between device performance and annealing conditions

Influence of processing conditions on the optical properties of chemically deposited zinc sulphide (ZnS) thin film

NASA Astrophysics Data System (ADS)

Igweoko, A. E.; Augustine, C.; Idenyi, N. E.; Okorie, B. A.; Anyaegbunam, F. N. C.

2018-03-01

In this paper, we present the influence of post deposition annealing and varying concentration on the optical properties of ZnS thin films fabricated by chemical bath deposition (CBD) at 65 °C from chemical baths comprising NH3/SC(NH2)2/ZnSO4 solutions at pH of about 10. The film samples were annealed at temperatures ranging from 373 K–473 K and the concentration of the film samples vary from 0.1 M–0.7 M. Post deposition annealing and concentration played an important role on the optical parameters investigated which includes absorbance, transmittance, reflectance, absorption coefficient, band gap, refractive index and extinction coefficient. The optical parameters were found to vary with post deposition annealing in one direction and concentration of Zn2+ in the reverse direction. For instance, post deposition annealing increases the band gap from 3.65 eV for as-deposited to 3.70 eV, 3.75 eV and 3.85 eV for annealed at 373 K, 423 K and 473 K respectively whereas concentration of Zn2+ decreases the band gap from 3.95 eV at 0.1 M to 3.90 eV, 3.85 eV and 3.80 eV at 0.3 M, 0.5 M and 0.7 M respectively. The fundamental absorption edge of ZnS thin films shifted toward the highest photon energies (blue shift) after annealing and shifted toward the lowest photon energies (red shift) with increasing Zn ions concentration. A linear relation between band gap energy and Urbach energy was found. After annealing, the Urbach energy increases form 3.10 eV to 3.50 eV and decreases from 3.40 eV to 3.10 eV at varying Zn2+ concentration. The property of wide band gap makes ZnS suitable for buffer layer of film solar cells, permitting more light especially the short wavelength light into absorber layer.

TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

NASA Astrophysics Data System (ADS)

Kato, Kimihiko; Matsui, Hiroaki; Tabata, Hitoshi; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Control of fabrication processes for a gate stack structure with a ZnO thin channel layer and an Al2O3 gate insulator has been examined for enhancing the performance of a top-gate ZnO thin film transistor (TFT). The Al2O3/ZnO interface and the ZnO layer are defective just after the Al2O3 layer formation by atomic layer deposition. Post treatments such as plasma oxidation, annealing after the Al2O3 deposition, and gate metal formation (PMA) are promising to improve the interfacial and channel layer qualities drastically. Post-plasma oxidation effectively reduces the interfacial defect density and eliminates Fermi level pinning at the Al2O3/ZnO interface, which is essential for improving the cut-off of the drain current of TFTs. A thermal effect of post-Al2O3 deposition annealing at 350 °C can improve the crystalline quality of the ZnO layer, enhancing the mobility. On the other hand, impacts of post-Al2O3 deposition annealing and PMA need to be optimized because the annealing can also accompany the increase in the shallow-level defect density and the resulting electron concentration, in addition to the reduction in the deep-level defect density. The development of the interfacial control technique has realized the excellent TFT performance with a large ON/OFF ratio, steep subthreshold characteristics, and high field-effect mobility.

Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment.

PubMed

Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yuanjian; Wei, Changchun; Xu, Shengzhi; Zhao, Ying

2014-10-07

In this study, hydrogenated amorphous silicon (a-Si:H) thin films are deposited using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) system. The Si-H configuration of the a-Si:H/c-Si interface is regulated by optimizing the deposition temperature and post-annealing duration to improve the minority carrier lifetime (τeff) of a commercial Czochralski (Cz) silicon wafer. The mechanism of this improvement involves saturation of the microstructural defects with hydrogen evolved within the a-Si:H films due to the transformation from SiH2 into SiH during the annealing process. The post-annealing temperature is controlled to ∼180 °C so that silicon heterojunction solar cells (SHJ) could be prepared without an additional annealing step. To achieve better performance of the SHJ solar cells, we also optimize the thickness of the a-Si:H passivation layer. Finally, complete SHJ solar cells are fabricated using different temperatures for the a-Si:H film deposition to study the influence of the deposition temperature on the solar cell parameters. For the optimized a-Si:H deposition conditions, an efficiency of 18.41% is achieved on a textured Cz silicon wafer.

Simulated annealing with probabilistic analysis for solving traveling salesman problems

NASA Astrophysics Data System (ADS)

Hong, Pei-Yee; Lim, Yai-Fung; Ramli, Razamin; Khalid, Ruzelan

2013-09-01

Simulated Annealing (SA) is a widely used meta-heuristic that was inspired from the annealing process of recrystallization of metals. Therefore, the efficiency of SA is highly affected by the annealing schedule. As a result, in this paper, we presented an empirical work to provide a comparable annealing schedule to solve symmetric traveling salesman problems (TSP). Randomized complete block design is also used in this study. The results show that different parameters do affect the efficiency of SA and thus, we propose the best found annealing schedule based on the Post Hoc test. SA was tested on seven selected benchmarked problems of symmetric TSP with the proposed annealing schedule. The performance of SA was evaluated empirically alongside with benchmark solutions and simple analysis to validate the quality of solutions. Computational results show that the proposed annealing schedule provides a good quality of solution.

Toward understanding dynamic annealing processes in irradiated ceramics

NASA Astrophysics Data System (ADS)

Myers, Michael Thomas

High energy particle irradiation inevitably generates defects in solids in the form of collision cascades. The ballistic formation and thermalization of cascades occur rapidly and are believed to be reasonably well understood. However, knowledge of the evolution of defects after damage cascade thermalization, referred to as dynamic annealing, is quite limited. Unraveling the mechanisms associated with dynamic an- nealing is crucial since such processes play an important role in the formation of stable post-irradiation disorder in ion-beam-processed semiconductors and determines the "radiation tolerance" of many nuclear materials. The purpose of this dissertation is to further our understanding of the processes involved in dynamic annealing. In order to achieve this, two main tasks are undertaken. First, the effects of dynamic annealing are investigated in ZnO, a technologically relevant material that exhibits very high dynamic defect annealing at room temper- ature. Such high dynamic annealing leads to unusual defect accumulation in heavy ion bombarded ZnO. Through this work, the puzzling features that were observed more than a decade ago in ion-channeling spectra have finally been explained. We show that the presence of a polar surface substantially alters damage accumulation. Non-polar surface terminations of ZnO are shown to exhibit enhanced dynamic an- nealing compared to polar surface terminated ZnO. Additionally, we demonstrate one method to reduce radiation damage in polar surface terminated ZnO by means of a surface modification. These results advance our efforts in the long-sought-after goal of understanding complex radiation damage processes in ceramics. Second, a pulsed-ion-beam method is developed and demonstrated in the case of Si as a prototypical non-metallic target. Such a method is shown to be a novel experimental technique for direct extraction of dynamic annealing parameters. The relaxation times and effective diffusion lengths of mobile defects during the dynamic annealing process play a vital role in damage accumulation. We demonstrate that these parameters dominate the formation of stable post-irradiation disorder. In Si, a defect lifetime of ˜ 6 ms and a characteristic defect diffusion length of ˜ 30 nm are measured. These results should nucleate future pulsed-beam studies of dynamic defect interaction processes in technologically relevant materials. In particular, un- derstanding length- and time-scales of defect interactions are essential for extending laboratory findings to nuclear material lifetimes and to the time-scales of geological storage of nuclear waste.

Effects of annealing temperature on the H2-sensing properties of Pd-decorated WO3 nanorods

NASA Astrophysics Data System (ADS)

Lee, Sangmin; Lee, Woo Seok; Lee, Jae Kyung; Hyun, Soong Keun; Lee, Chongmu; Choi, Seungbok

2018-03-01

The temperature of the post-annealing treatment carried out after noble metal deposition onto semiconducting metal oxides (SMOs) must be carefully optimized to maximize the sensing performance of the metal-decorated SMO sensors. WO3 nanorods were synthesized by thermal evaporation of WO3 powders and decorated with Pd nanoparticles using a sol-gel method, followed by an annealing process. The effects of the annealing temperature on the hydrogen gas-sensing properties of the Pd-decorated WO3 nanorods were then examined; the optimal annealing temperature, leading to the highest response of the WO3 nanorod sensor to H2, was determined to be 600 °C. Post-annealing at 600 °C resulted in nanorods with the highest surface area-to-volume ratio, as well as in the optimal size and the largest number of deposited Pd nanoparticles, leading to the highest response and the shortest response/recovery times toward H2. The improved H2-sensing performance of the Pd-decorated WO3 nanorod sensor, compared to a sensor based on pristine WO3 nanorods, is attributed to the enhanced catalytic activity, increased surface area-to-volume ratio, and higher amounts of surface defects.

Post-processing optimization of electrospun submicron poly(3-hydroxybutyrate) fibers to obtain continuous films of interest in food packaging applications.

PubMed

Cherpinski, Adriane; Torres-Giner, Sergio; Cabedo, Luis; Lagaron, Jose M

2017-10-01

Polyhydroxyalkanoates (PHAs) are one of the most researched family of biodegradable polymers based on renewable materials due to their thermoplastic nature and moisture resistance. The present study was targeted to investigate the preparation and characterization of poly(3-hydroxybutyrate) (PHB) films obtained through the electrospinning technique. To convert them into continuous films and then to increase their application interest in packaging, the electrospun fiber mats were subsequently post-processed by different physical treatments. Thus, the effect of annealing time and cooling method on morphology, molecular order, thermal, optical, mechanical, and barrier properties of the electrospun submicron PHB fibers was studied. Annealing at 160°C, well below the homopolyester melting point, was found to be the minimum temperature at which homogeneous transparent films were produced. The film samples that were cooled slowly after annealing showed the lowest permeability to oxygen, water vapor, and limonene. The optimally post-processed electrospun PHB fibers exhibited similar rigidity to conventional compression-molded PHA films, but with enhanced elongation at break and toughness. Films made by this electrospinning technique have many potential applications, such as in the design of barrier layers, adhesive interlayers, and coatings for fiber- and plastic-based food packaging materials.

Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

PubMed Central

Hussain, Sajjad; Singh, Jai; Vikraman, Dhanasekaran; Singh, Arun Kumar; Iqbal, Muhammad Zahir; Khan, Muhammad Farooq; Kumar, Pushpendra; Choi, Dong-Chul; Song, Wooseok; An, Ki-Seok; Eom, Jonghwa; Lee, Wan-Gyu; Jung, Jongwan

2016-01-01

We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ~29 cm2/Vs and current on/off ratio on the order of ~104 were obtained for bilayer MoS2. The mobility increased up to ~173–181 cm2/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film. PMID:27492282

A low thermal impact annealing process for SiO2-embedded Si nanocrystals with optimized interface quality

NASA Astrophysics Data System (ADS)

Hiller, Daniel; Gutsch, Sebastian; Hartel, Andreas M.; Löper, Philipp; Gebel, Thoralf; Zacharias, Margit

2014-04-01

Silicon nanocrystals (Si NCs) for 3rd generation photovoltaics or optoelectronic applications can be produced by several industrially compatible physical or chemical vapor deposition technologies. A major obstacle for the integration into a fabrication process is the typical annealing to form and crystallize these Si quantum dots (QDs) which involves temperatures ≥1100 °C for 1 h. This standard annealing procedure allows for interface qualities that correspond to more than 95% dangling bond defect free Si NCs. We study the possibilities to use rapid thermal annealing (RTA) and flash lamp annealing to crystallize the Si QDs within seconds or milliseconds at high temperatures. The Si NC interface of such samples exhibits huge dangling bond defect densities which makes them inapplicable for photovoltaics or optoelectronics. However, if the RTA high temperature annealing is combined with a medium temperature inert gas post-annealing and a H2 passivation, luminescent Si NC fractions of up to 90% can be achieved with a significantly reduced thermal load. A new figure or merit, the relative dopant diffusion length, is introduced as a measure for the impact of a Si NC annealing procedure on doping profiles of device structures.

Oxygen Annealing in the Synthesis of the Electron-Doped Cuprates

NASA Astrophysics Data System (ADS)

Higgins, J. S.; Bach, P. L.; Yu, W.; Weaver, B. D.; Greene, R. L.

2015-03-01

Post-synthesis oxygen reduction (annealing) in the electron-doped, high-temperature superconducting cuprates is necessary for the establishment of superconductivity. It is not established what effect this reduction has microscopically on the lattice structure. Several mechanisms have been put forth as explanations; they range from disorder minimization1, antiferromagnetic suppression2, and copper migration3. Here we present an electronic transport study on electron-doped cuprate Pr2-xCexCuO4+/-δ (PCCO) thin films in an attempt to better understand the need for this post-synthesis process. Several different cerium doping concentrations of PCCO were grown. Within each doping, a series of films were grown with varying levels of oxygen concentration. As a measure of disorder on the properties of PCCO, several films were irradiated with various doses of 2 MeV protons. Analysis within each series, and among the different dopings, favors disorder minimization through the removal of apical oxygen as the explanation for the necessary post-synthesis annealing process. 1P. K. Mang, et al., Physical Review Letters, 93(2):027002, 2004. 2P. Richard, et al., Physical Review B, 70 (6), 064513, 2004. 3Hye Jung Kang, et al., Nature Materials, 2007. Supported by NSF DMR 1104256.

Kinetics modeling of precipitation with characteristic shape during post-implantation annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Kun-Dar, E-mail: kundar@mail.nutn.edu.tw; Chen, Kwanyu

2015-11-15

In this study, we investigated the precipitation with characteristic shape in the microstructure during post-implantation annealing via a theoretical modeling approach. The processes of precipitates formation and evolution during phase separation were based on a nucleation and growth mechanism of atomic diffusion. Different stages of the precipitation, including the nucleation, growth and coalescence, were distinctly revealed in the numerical simulations. In addition, the influences of ion dose, temperature and crystallographic symmetry on the processes of faceted precipitation were also demonstrated. To comprehend the kinetic mechanism, the simulation results were further analyzed quantitatively by the Kolmogorov-Johnson-Mehl-Avrami (KJMA) equation. The Avrami exponentsmore » obtained from the regression curves varied from 1.47 to 0.52 for different conditions. With the increase of ion dose and temperature, the nucleation and growth of precipitations were expedited in accordance with the shortened incubation time and the raised coefficient of growth rate. A miscellaneous shape of precipitates in various crystallographic symmetry systems could be simulated through this anisotropic model. From the analyses of the kinetics, more fundamental information about the nucleation and growth mechanism of faceted precipitation during post-implantation annealing was acquired for future application.« less

Effects of thermal treatment on the co-rolled U-Mo fuel foils

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dennis D. Keiser, Jr.; Tammy L. Trowbridge; Cynthia R. Breckenridge

2014-11-01

A monolithic fuel type is being developed to convert US high performance research and test reactors such as Advanced Test Reactor (ATR) at Idaho National Laboratory from highly enriched uranium (HEU) to low-enriched uranium (LEU). The interaction between the cladding and the U-Mo fuel meat during fuel fabrication and irradiation is known to have negative impacts on fuel performance, such as mechanical integrity and dimensional stability. In order to eliminate/minimize the direct interaction between cladding and fuel meat, a thin zirconium diffusion barrier was introduced between the cladding and U-Mo fuel meat through a co-rolling process. A complex interface betweenmore » the zirconium and U-Mo was developed during the co-rolling process. A predictable interface between zirconium and U-Mo is critical to achieve good fuel performance since the interfaces can be the weakest link in the monolithic fuel system. A post co-rolling annealing treatment is expected to create a well-controlled interface between zirconium and U-Mo. A systematic study utilizing post co-rolling annealing treatment has been carried out. Based on microscopy results, the impacts of the annealing treatment on the interface between zirconium and U-Mo will be presented and an optima annealing treatment schedule will be suggested. The effects of the annealing treatment on the fuel performance will also be discussed.« less

Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si

NASA Astrophysics Data System (ADS)

Ali, Ahmad Hadi; Hassan, Zainuriah; Shuhaimi, Ahmad

2018-06-01

This paper reports on the enhancement of optical transmittance and electrical resistivity of indium tin oxide (ITO) transparent conductive oxides (TCO) deposited by radio frequency (RF) sputtering on Si substrate. Post-annealing was conducted on the samples at temperature ranges of 500-700 °C. From X-ray diffraction analysis (XRD), ITO (2 2 2) peak was observed after post-annealing indicating crystallization phase of the films. From UV-vis measurements, the ITO thin film shows highest transmittance of more than 90% at post-annealing temperature of 700 °C as compared to the as-deposited thin films. From atomic force microscope (AFM), the surface roughness becomes smoother after post-annealing as compared to the as-deposited. The lowest electrical resistivity for ITO sample is 6.68 × 10-4 Ω cm after post-annealed at 700 °C that are contributed by high carrier concentration and mobility. The improved structural and surface morphological characteristics helps in increasing the optical transmittance and reducing the electrical resistivity of the ITO thin films.

Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-k Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing

NASA Astrophysics Data System (ADS)

Park, Hokyung; Choi, Rino; Lee, Byoung Hun; Hwang, Hyunsang

2007-09-01

High pressure deuterium annealing on the hot carrier reliability characteristics of HfSiO metal oxide semiconductor field effect transistor (MOSFET) was investigated. Comparing with the conventional forming gas (H2/Ar=10%/96%, 480 °C, 30 min) annealed sample, MOSFET annealed in 5 atm pure deuterium ambient at 400 °C showed the improvement of linear drain current, reduction of interface trap density, and improvement of the hot carrier reliability characteristics. These improvements can be attributed to the effective passivation of the interface trap site after high pressure annealing and heavy mass effect of deuterium. These results indicate that high pressure pure deuterium annealing can be a promising process for improving device performance as well as hot carrier reliability, together.

Regulation of multispanning membrane protein topology via post-translational annealing.

PubMed

Van Lehn, Reid C; Zhang, Bin; Miller, Thomas F

2015-09-26

The canonical mechanism for multispanning membrane protein topogenesis suggests that protein topology is established during cotranslational membrane integration. However, this mechanism is inconsistent with the behavior of EmrE, a dual-topology protein for which the mutation of positively charged loop residues, even close to the C-terminus, leads to dramatic shifts in its topology. We use coarse-grained simulations to investigate the Sec-facilitated membrane integration of EmrE and its mutants on realistic biological timescales. This work reveals a mechanism for regulating membrane-protein topogenesis, in which initially misintegrated configurations of the proteins undergo post-translational annealing to reach fully integrated multispanning topologies. The energetic barriers associated with this post-translational annealing process enforce kinetic pathways that dictate the topology of the fully integrated proteins. The proposed mechanism agrees well with the experimentally observed features of EmrE topogenesis and provides a range of experimentally testable predictions regarding the effect of translocon mutations on membrane protein topogenesis.

Effects of homogenization treatment on recrystallization behavior of 7150 aluminum sheet during post-rolling annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Zhanying; Department of Applied Science, University of Québec at Chicoutimi, Saguenay, QC G7H 2B1; Zhao, Gang

2016-04-15

The effects of two homogenization treatments applied to the direct chill (DC) cast billet on the recrystallization behavior in 7150 aluminum alloy during post-rolling annealing have been investigated using the electron backscatter diffraction (EBSD) technique. Following hot and cold rolling to the sheet, measured orientation maps, the recrystallization fraction and grain size, the misorientation angle and the subgrain size were used to characterize the recovery and recrystallization processes at different annealing temperatures. The results were compared between the conventional one-step homogenization and the new two-step homogenization, with the first step being pretreated at 250 °C. Al{sub 3}Zr dispersoids with highermore » densities and smaller sizes were obtained after the two-step homogenization, which strongly retarded subgrain/grain boundary mobility and inhibited recrystallization. Compared with the conventional one-step homogenized samples, a significantly lower recrystallized fraction and a smaller recrystallized grain size were obtained under all annealing conditions after cold rolling in the two-step homogenized samples. - Highlights: • Effects of two homogenization treatments on recrystallization in 7150 Al sheets • Quantitative study on the recrystallization evolution during post-rolling annealing • Al{sub 3}Zr dispersoids with higher densities and smaller sizes after two-step treatment • Higher recrystallization resistance of 7150 sheets with two-step homogenization.« less

Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

NASA Astrophysics Data System (ADS)

Shin, Joong-Won; Cho, Won-Ju

2017-07-01

In this paper, we investigate a low thermal budget post-deposition-annealing (PDA) process for amorphous In-Ga-ZnO (a-IGZO) oxide semiconductor thin-film-transistors (TFTs). To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA) and rapid thermal annealing (RTA) methods were applied, and the results were compared with those of the conventional annealing (CTA) method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C) and short annealing time (2 min) because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

Thermal annealing of lattice-matched InGaAs/InAlAs Quantum-Cascade Lasers

NASA Astrophysics Data System (ADS)

Mathonnière, Sylvain; Semtsiv, M. P.; Ted Masselink, W.

2017-11-01

We describe the evolution of optical power, threshold current, and emission wavelength of a lattice-matched InGaAs/InAlAs Quantum-Cascade Laser (QCL) emitting at 13 μm grown by gas-source molecular-beam epitaxy under thermal annealing. Pieces from the same 2-in wafer were annealed at 600 °C, 650 °C, or 700 °C for 1 h; one control piece remained unannealed. No change in threshold current and emission wavelength was observed. The slope efficiency and maximum emission power increase for the 600 °C anneal, but higher annealing temperatures resulted in degraded performance. This result stands in contrast with the observation that strain-compensated structures cannot withstand annealing temperature of 600 °C. Useful information for post-growth processing steps and the role of interface roughness in QCL performance are obtained.

Controlling CH3NH3PbI(3-x)Cl(x) Film Morphology with Two-Step Annealing Method for Efficient Hybrid Perovskite Solar Cells.

PubMed

Liu, Dong; Wu, Lili; Li, Chunxiu; Ren, Shengqiang; Zhang, Jingquan; Li, Wei; Feng, Lianghuan

2015-08-05

The methylammonium lead halide perovskite solar cells have become very attractive because they can be prepared with low-cost solution-processable technology and their power conversion efficiency have been increasing from 3.9% to 20% in recent years. However, the high performance of perovskite photovoltaic devices are dependent on the complicated process to prepare compact perovskite films with large grain size. Herein, a new method is developed to achieve excellent CH3NH3PbI3-xClx film with fine morphology and crystallization based on one step deposition and two-step annealing process. This method include the spin coating deposition of the perovskite films with the precursor solution of PbI2, PbCl2, and CH3NH3I at the molar ratio 1:1:4 in dimethylformamide (DMF) and the post two-step annealing (TSA). The first annealing is achieved by solvent-induced process in DMF to promote migration and interdiffusion of the solvent-assisted precursor ions and molecules and realize large size grain growth. The second annealing is conducted by thermal-induced process to further improve morphology and crystallization of films. The compact perovskite films are successfully prepared with grain size up to 1.1 μm according to SEM observation. The PL decay lifetime, and the optic energy gap for the film with two-step annealing are 460 ns and 1.575 eV, respectively, while they are 307 and 327 ns and 1.577 and 1.582 eV for the films annealed in one-step thermal and one-step solvent process. On the basis of the TSA process, the photovoltaic devices exhibit the best efficiency of 14% under AM 1.5G irradiation (100 mW·cm(-2)).

Investigation of impact of post-metallization annealing on reliability of 65 nm NOR floating-gate flash memories

NASA Astrophysics Data System (ADS)

Chiu, Shengfen; Xu, Yue; Ji, Xiaoli; Yan, Feng

2016-12-01

This paper investigates the impact of post-metallization annealing (PMA) in pure nitrogen ambient on the reliability of 65 nm NOR-type floating-gate flash memory devices. The experimental results show that, with PMA process, the cycling performance of flash cells, especially for the erasing speed is obviously degraded compared to that without PMA. It is found that the bulk oxide traps and tunnel oxide/Si interface traps are significantly increased with PMA treatment. The water/moisture residues left in the interlayer dielectric layers diffuse to tunnel oxide during PMA process is considered to be responsible for these traps generation, which further enhances the degradation of erase performance. Skipping PMA treatment is proposed to suppress the water diffusion effect on erase performance degradation of flash cells.

Optical properties of Mg doped p-type GaN nanowires

NASA Astrophysics Data System (ADS)

Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S.; Tyagi, A. K.

2015-06-01

Mg doped p-type GaN nanowires are grown using chemical vapor deposition technique in vapor-liquid-solid (VLS) process. Morphological and structural studies confirm the VLS growth process of nanowires and wurtzite phase of GaN. We report the optical properties of Mg doped p-type GaN nanowires. Low temperature photoluminescence studies on as-grown and post-growth annealed samples reveal the successful incorporation of Mg dopants. The as-grwon and annealed samples show passivation and activation of Mg dopants, respectively, in GaN nanowires.

Thermal Assisted Oxygen Annealing for High Efficiency Planar CH3NH3PbI3 Perovskite Solar Cells

PubMed Central

Ren, Zhiwei; Ng, Annie; Shen, Qian; Gokkaya, Huseyin Cem; Wang, Jingchuan; Yang, Lijun; Yiu, Wai-Kin; Bai, Gongxun; Djurišić, Aleksandra B.; Leung, Wallace Woon-fong; Hao, Jianhua; Chan, Wai Kin; Surya, Charles

2014-01-01

We report investigations on the influences of post-deposition treatments on the performance of solution-processed methylammonium lead triiodide (CH3NH3PbI3)-based planar solar cells. The prepared films were stored in pure N2 at room temperature or annealed in pure O2 at room temperature, 45°C, 65°C and 85°C for 12 hours prior to the deposition of the metal electrodes. It is found that annealing in O2 leads to substantial increase in the power conversion efficiencies (PCEs) of the devices. Furthermore, strong dependence on the annealing temperature for the PCEs of the devices suggests that a thermally activated process may underlie the observed phenomenon. It is believed that the annealing process may facilitate the diffusion of O2 into the spiro-MeOTAD for inducing p-doping of the hole transport material. Furthermore, the process can result in lowering the localized state density at the grain boundaries as well as the bulk of perovskite. Utilizing thermal assisted O2 annealing, high efficiency devices with good reproducibility were attained. A PCE of 15.4% with an open circuit voltage (VOC) 1.04 V, short circuit current density (JSC) 23 mA/cm2, and fill factor 0.64 had been achieved for our champion device. PMID:25341527

The influence of post-deposition annealing on the structure, morphology and luminescence properties of pulsed laser deposited La0.5Gd1.5SiO5 doped Dy3+ thin films

NASA Astrophysics Data System (ADS)

Ogugua, Simon N.; Swart, Hendrik C.; Ntwaeaborwa, Odireleng M.

2018-04-01

The influence of post-deposition annealing on the structure, particle morphology and photoluminescence properties of dysprosium (Dy3+) doped La0.5Gd1.5SiO5 thin films grown on Si(111) substrates at different substrate temperatures using pulsed laser deposition (PLD) technique were studied. The X-ray diffractometer results showed an improved crystallinity after post-annealing. The topography and morphology of the post-annealed films were studied using atomic force microscopy and field emission scanning electron microscopy respectively. The elemental composition in the surface region of the films were analyzed using energy dispersive X-ray spectroscopy. The photoluminescence studies showed an improved luminescent after post-annealing. The cathodoluminescence properties of the films are also reported. The CIE colour coordinates calculated from the photoluminescence and cathodoluminescence data suggest that the films can have potential application in white light emitting diode (LED) and field emission display (FED) applications.

Improved optoelectronics properties of ITO-based transparent conductive electrodes with the insertion of Ag/Ni under-layer

NASA Astrophysics Data System (ADS)

Ali, Ahmad Hadi; Abu Bakar, Ahmad Shuhaimi; Hassan, Zainuriah

2014-10-01

ITO-based transparent conductive electrodes (TCE) with Ag/Ni thin metal under-layer were deposited on Si and glass substrates by thermal evaporator and RF magnetron sputtering system. Ceramic ITO with purity of 99.99% and In2O3:SnO2 weight ratio of 90:10 was used as a target at room temperature. Post-deposition annealing was performed on the TCE at moderate temperature of 500 °C, 600 °C and 700 °C under N2 ambient. It was observed that the structural properties, optical transmittance, electrical characteristics and surface morphology were improved significantly after the post-annealing process. Post-annealed ITO/Ag/Ni at 600 °C shows the best quality of TCE with figure-of-merit (FOM) of 1.5 × 10-2 Ω-1 and high optical transmittance of 83% at 470 nm as well as very low electrical resistivity of 4.3 × 10-5 Ω-cm. The crystalline quality and surface morphological plays an important role in determining the quality of the TCE multilayer thin films properties.

Effects of annealing on arrays of Ge nanocolumns formed by glancing angle deposition

NASA Astrophysics Data System (ADS)

Khare, C.; Gerlach, J. W.; Höche, T.; Fuhrmann, B.; Leipner, H. S.; Rauschenbach, B.

2012-10-01

Post-deposition thermal annealing of glancing angle deposited Ge nanocolumn arrays was carried out in a continuous Ar-flow at temperatures ranging from TA = 300 to 800 °C for different annealing durations. Morphological alterations and the recrystallization process induced by the thermal annealing treatment were investigated for the Ge nanocolumns deposited on planar and pre-patterned Si substrates. From X-ray diffraction (XRD) measurements, the films annealed at TA ≥ 500 °C were found to be polycrystalline. On planar Si substrates, at TA = 600 °C nanocolumns exhibited strong coarsening and merging, while a complete disintegration of the nanocolumns was detected at TA = 700 °C. The morphology of nanostructures deposited on pre-patterned substrates differs substantially, where the merging or column-disintegration effect was absent at elevated annealing temperatures. The two-arm-chevron nanostructures grown on pre-patterned substrates retained their complex shape and morphology, after extended annealing intervals. Investigations by transmission electron microscopy revealed nanocrystalline domains of the order of 5-30 nm (in diameter) present within the chevron structures after the annealing treatment.

Laser post-processing of halide perovskites for enhanced photoluminescence and absorbance

NASA Astrophysics Data System (ADS)

Tiguntseva, E. Y.; Saraeva, I. N.; Kudryashov, S. I.; Ushakova, E. V.; Komissarenko, F. E.; Ishteev, A. R.; Tsypkin, A. N.; Haroldson, R.; Milichko, V. A.; Zuev, D. A.; Makarov, S. V.; Zakhidov, A. A.

2017-11-01

Hybrid halide perovskites have emerged as one of the most promising type of materials for thin-film photovoltaic and light-emitting devices. Further boosting their performance is critically important for commercialization. Here we use femtosecond laser for post-processing of organo-metalic perovskite (MAPbI3) films. The high throughput laser approaches include both ablative silicon nanoparticles integration and laser-induced annealing. By using these techniques, we achieve strong enhancement of photoluminescence as well as useful light absorption. As a result, we observed experimentally 10-fold enhancement of absorbance in a perovskite layer with the silicon nanoparticles. Direct laser annealing allows for increasing of photoluminescence over 130%, and increase absorbance over 300% in near-IR range. We believe that the developed approaches pave the way to novel scalable and highly effective designs of perovskite based devices.

Forming an age hardenable aluminum alloy with intermediate annealing

NASA Astrophysics Data System (ADS)

Wang, Kaifeng; Carsley, John E.; Stoughton, Thomas B.; Li, Jingjing; Zhang, Lianhong; He, Baiyan

2013-12-01

A method to improve formability of aluminum sheet alloys by a two-stage stamping process with intermediate annealing was developed for a non-age hardenable Al-Mg alloy where the annealing heat treatment provided recovery of cold work from the initial stamping and recrystallization of the microstructure to enhance the forming limits of the material. This method was extended to an age hardenable, Al-Mg-Si alloy, which is complicated by the competing metallurgical effects during heat treatment including recovery (softening effect) vs. precipitation (hardening effect). An annealing heat treatment process condition was discovered wherein the stored strain energy from an initial plastic deformation can be sufficiently recovered to enhance formability in a second deformation; however, there is a deleterious effect on subsequent precipitation hardening. The improvement in formability was quantified with uniaxial tensile tests as well as with the forming limit diagram. Since strain-based forming limit curves (FLC) are sensitive to pre-strain history, both stress-based FLCs and polar-effective-plastic-strain (PEPS) FLCs, which are path-independent, were used to evaluate the forming limits after preform annealing. A technique was developed to calculate the stress-based FLC in which a residual-effective-plastic-strain (REPS) was determined by overlapping the hardening curve of the pre-strained and annealed material with that of the simply-annealed- material. After converting the strain-based FLCs using the constant REPS method, it was found that the stress-based FLCs and the PEPS FLCs of the post-annealed materials were quite similar and both tools are applicable for evaluating the forming limits of Al-Mg-Si alloys for a two-step stamping process with intermediate annealing.

Effect of Hydrogen Post-Annealing on Transparent Conductive ITO/Ga2O3 Bi-Layer Films for Deep Ultraviolet Light-Emitting Diodes.

PubMed

Kim, Kyeong Heon; Kim, Su Jin; Park, Sang Young; Kim, Tae Geun

2015-10-01

The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples--an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture--were prepared and annealed at different temperatures ranging from 100 °C to 500 °C for comparison. Among these samples, the sample annealed at 300 °C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/square and a high UV transmittance of 87.1% at 300 nm.

Post annealing effects on the electrical characteristics of pentacene thin film transistors on flexible substrates.

PubMed

Oh, Tae-Yeon; Jeong, Shin Woo; Chang, Seongpil; Park, Jung-Ho; Kim, Jong-Woo; Choi, Kookhyun; Ha, Hyeon-Jun; Hwang, Bo-Yeon; Ju, Byeong-Kwon

2013-05-01

This work studies the effect of post annealing of pentacene on a flexible substrate through the examination of electrical properties and surface morphologies. It is confirmed that the best performance of devices is achieved when the post annealing temperature is 60 degrees C, since the grain size increases, which decrease grain boundaries caused charge transport limit. We can also confirmed the large threshold voltage shift of device annealed at 60 degrees C that means the lower trap density between channel and insulator interface. The device annealed at 60 degrees C exhibits a saturation mobility of 1.99 cm2/V x s, an on/off ratio of 1.87 x 10(4), and a subthreshold slope of 2.5 V/decade.

Growth of Cu 0.5Tl 0.5Ba 2Ca 3Cu 4-yZn yO 12-δ superconductor with optimum carriers

NASA Astrophysics Data System (ADS)

Mumtaz, M.; Khan, Nawazish A.; Khan, E. U.

2010-05-01

We have tried to vary the carriers concentration in Cu 0.5Tl 0.5Ba 2Ca 3Cu 4-yZn yO 12-δ ( y = 0, 1, 1.5, 2, 2.5) superconductor with the help of post-annealing experiments carried out in nitrogen, oxygen and air and to investigate its effects on the superconductivity parameters. The zero resistivity critical temperature [ T c( R = 0)], the magnitude of diamagnetism and critical current [ I c( H = 0)] are found to increase in Zn free samples after post-annealing in oxygen and air, while these superconducting properties have been suppressed after post-annealing in nitrogen at 550 °C for 6 h. The post-annealing of Zn-doped samples in air has marginally increased the superconducting properties, while these properties have been suppressed after post-annealing in nitrogen and oxygen. These studies have led us to the definite conclusion that the Zn-doped material has grown with optimum carriers concentration.

Influence of annealing temperature on the microstructure and magnetic properties of Ni/NiO core-shell nanowires

NASA Astrophysics Data System (ADS)

Xiang, Wenfeng; Liu, Yuan; Yao, Jiangfeng; Sun, Rui

2018-03-01

Ni/NiO core-shell nanowires (NWs) were synthesized by thermal annealing of Ni NWs and variations in the microstructure, surface morphology, and magnetic properties of the NWs as a function of annealing temperature were investigated. The results showed that the grain size and crystal quality of NiO increased with an increasing annealing temperature. Specially, the effect of annealing temperature was much greater than annealing time for the formation of Ni/NiO NWs during the oxidization process. The total weight gain of the Ni/NiO NWs continuously increased when the annealing temperature was lower than 400 °C and the annealing time was more than 2 h; however, the weight gain of the Ni/NiO NWs was almost constant after annealing for 40 min when the annealing temperature was higher than 500 °C. The thorns on the surface of the Ni/NiO NWs gradually passivated and magnetic properties declined when the annealing temperature was increased from 300 °C to 400 °C. Smooth Ni/NiO NWs with no magnetic properties were prepared when the annealing temperature was over 500 °C. The detail study regarding the formation and evolution of Ni/NiO NWs is of considerable value and may provide useful information regarding the choice of post-treatment parameters for different applications of Ni/NiO NWs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Sungho, E-mail: shochoi@krict.re.kr; Park, Byung-Yoon; Jung, Ha-Kyun

Highlights: {yields} Systematic study of the fluorides doped solution-processed ZnO thin films via the luminescence and electrical behaviors. {yields} Defect-related visible emission bands are affected by annealing ambient and fluoride addition. {yields} Adding lithium fluoride followed by annealing in oxygen ambient leads to a controlled defect density with proper TFT performance. -- Abstract: To develop an efficient channel layer for thin film transistors (TFTs), understanding the defect-related luminescence and electrical property is crucial for solution-processed ZnO thin films. Film growth with the fluorides addition, especially using LiF, followed by the oxygen ambient post-annealing leads to decreased defect-related emission as wellmore » as enhanced switching property. The saturation mobility and current on/off ratio are 0.31 cm{sup 2} V{sup -1} s{sup -1} and 1.04 x 10{sup 3}. Consequently, we can visualize an optimized process condition and characterization method for solution-processed TFT based on the fluorine-doped ZnO film channel layer by considering the overall emission behavior.« less

Synthesis and properties of silicon nanowire devices

NASA Astrophysics Data System (ADS)

Byon, Kumhyo

Silicon nanowire (SiNW) is a very attractive one-dimensional material for future nanoelectronic applications. Reliable control of key field effect transistor (FET) parameters such as conductance, mobility, threshold voltage and on/off ratio is crucial to the applications of SiNW to working logic devices and integrated circuits. In this thesis, we fabricated silicon nanowire field effect transistors (SiNW FETs) and studied the dependence of their electrical transport properties upon various parameters including SiNW growth conditions, post-growth doping, and contact annealing. From these studies, we found how different processes control important FET characteristics. Key accomplishments of this thesis include p-channel enhancement mode FETs, n-channel FETs by post-growth vapor doping and high performance ambipolar devices. In the first part of this work, single crystalline SiNWs were synthesized by thermal evaporation without gold catalysts. FETs were fabricated using both as-grown SiNWs and post-growth n-doped SiNWs. FET from p-type source materials behaves as a p-channel enhancement mode FET which is predominant in logic devices due to its fast operation and low power consumption. Using bismuth vapor, the as-grown SiNWs were doped into n-type materials. The majority carriers in SiNWs can therefore be controlled by proper choice of the vapor phase dopant species. Post-growth doping using vapor phase is applicable to other nanowire systems. In the second part, high performance ambipolar FETs were fabricated. A two step annealing process was used to control the Schottky barrier between SiNW and metal contacts in order to enhance device performance. Initial p-channel SiNW FETs were converted into ambipolar SiNW FETs after contact annealing. Furthermore, significant increases in both on/off ratio and channel mobilities were achieved after contact annealing. Promising device structures to implement ambipolar devices into large scale integrated circuits were proposed. The contributions of this study are to further understanding of the electrical transport properties of SiNWs and to provide optimized processes to fabricate emerging high performance nanoelectronic devices using SiNWs for future generation beyond bulk silicon.

NMOS contact resistance reduction with selenium implant into NiPt silicide

NASA Astrophysics Data System (ADS)

Rao, K. V.; Khaja, F. A.; Ni, C. N.; Muthukrishnan, S.; Darlark, A.; Lei, J.; Peidous, I.; Brand, A.; Henry, T.; Variam, N.; Erokhin, Y.

2012-11-01

A 25% reduction in NMOS contact resistance (Rc) was achieved by Selenium implantation into NiPt silicide film in VIISta Trident high-current single-wafer implanter. The Trident implanter is designed for shallow high-dose implants with high beam currents to maintain high throughput (for low CoO), with improved micro-uniformity and no energy contamination. The integration of Se implant was realized using a test chip dedicated to investigating silicide/junction related electrical properties and testable after silicidation. The silicide module processes were optimized, including the pre-clean (prior to RF PVD NiPt dep) and pre- and post-implant anneals. A 270°C soak anneal was used for RTP1, whereas a msec laser anneal was employed for RTP2 with sufficient process window (800-850°C), while maintaining excellent junction characteristics without Rs degradation.

Annealing Induced Re-crystallization in CH3NH3PbI3−xClx for High Performance Perovskite Solar Cells

PubMed Central

Yang, Yingguo; Feng, Shanglei; Li, Meng; Xu, Weidong; Yin, Guangzhi; Wang, Zhaokui; Sun, Baoquan; Gao, Xingyu

2017-01-01

Using poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as hole conductor, a series of inverted planar CH3NH3PbI3−xClx perovskite solar cells (PSCs) were fabricated based on perovskite annealed by an improved time-temperature dependent (TTD) procedure in a flowing nitrogen atmosphere for different time. Only after an optimum annealing time, an optimized power conversion efficiency of 14.36% could be achieved. To understand their performance dependence on annealing time, an in situ real-time synchrotron-based grazing incidence X-ray diffraction (GIXRD) was used to monitor a step-by-step gradual structure transformation from distinct mainly organic-inorganic hybrid materials into highly ordered CH3NH3PbI3 crystal during annealing. However, a re-crystallization process of perovskite crystal was observed for the first time during such an annealing procedure, which helps to enhance the perovskite crystallization and preferential orientations. The present GIXRD findings could well explain the drops of the open circuit voltage (Voc) and the fill factor (FF) during the ramping of temperature as well as the optimized power conversion efficiency achieved after an optimum annealing time. Thus, the present study not only illustrates clearly the decisive roles of post-annealing in the formation of solution-processed perovskite to better understand its formation mechanism, but also demonstrates the crucial dependences of device performance on the perovskite microstructure in PSCs. PMID:28429762

Optimization of Urea-EnFET Based on Ta2O5 Layer with Post Annealing

PubMed Central

Lue, Cheng-En; Yu, Ting-Chun; Yang, Chia-Ming; Pijanowska, Dorota G.; Lai, Chao-Sung

2011-01-01

In this study, the urea-enzymatic field effect transistors (EnFETs) were investigated based on pH-ion sensitive field effect transistors (ISFETs) with tantalum pentoxide (Ta2O5) sensing membranes. In addition, a post N2 annealing was used to improve the sensing properties. At first, the pH sensitivity, hysteresis, drift, and light induced drift of the ISFETs were evaluated. After the covalent bonding process and urease immobilization, the urea sensitivity of the EnFETs were also investigated and compared with the conventional Si3N4 sensing layer. The ISFETs and EnFETs with annealed Ta2O5 sensing membranes showed the best responses, including the highest pH sensitivity (56.9 mV/pH, from pH 2 to pH 12) and also corresponded to the highest urea sensitivity (61 mV/pCurea, from 1 mM to 7.5 mM). Besides, the non-ideal factors of pH hysteresis, time drift, and light induced drift of the annealed samples were also lower than the controlled Ta2O5 and Si3N4 sensing membranes. PMID:22163862

Optimization of urea-EnFET based on Ta2O5 layer with post annealing.

PubMed

Lue, Cheng-En; Yu, Ting-Chun; Yang, Chia-Ming; Pijanowska, Dorota G; Lai, Chao-Sung

2011-01-01

In this study, the urea-enzymatic field effect transistors (EnFETs) were investigated based on pH-ion sensitive field effect transistors (ISFETs) with tantalum pentoxide (Ta(2)O(5)) sensing membranes. In addition, a post N(2) annealing was used to improve the sensing properties. At first, the pH sensitivity, hysteresis, drift, and light induced drift of the ISFETs were evaluated. After the covalent bonding process and urease immobilization, the urea sensitivity of the EnFETs were also investigated and compared with the conventional Si(3)N(4) sensing layer. The ISFETs and EnFETs with annealed Ta(2)O(5) sensing membranes showed the best responses, including the highest pH sensitivity (56.9 mV/pH, from pH 2 to pH 12) and also corresponded to the highest urea sensitivity (61 mV/pC(urea), from 1 mM to 7.5 mM). Besides, the non-ideal factors of pH hysteresis, time drift, and light induced drift of the annealed samples were also lower than the controlled Ta(2)O(5) and Si(3)N(4) sensing membranes.

Effects of rapid thermal annealing on the optical properties of strain-free quantum ring solar cells

PubMed Central

2013-01-01

Strain-free GaAs/Al0.33Ga0.67As quantum rings are fabricated by droplet epitaxy. Both photoresponse and photoluminescence spectra confirm optical transitions in quantum rings, suggesting that droplet epitaxial nanomaterials are applicable to intermediate band solar cells. The effects of post-growth annealing on the quantum ring solar cells are investigated, and the optical properties of the solar cells with and without thermal treatment are characterized by photoluminescence technique. Rapid thermal annealing treatment has resulted in the significant improvement of material quality, which can be served as a standard process for quantum structure solar cells grown by droplet epitaxy. PMID:23281811

Luminescence of Er/Yb and Tm/Yb doped FAp nanoparticles and ceramics

NASA Astrophysics Data System (ADS)

Grigorjeva, L.; Smits, K.; Millers, D.; Jankoviča, Dz

2015-03-01

The nanoparticles of hydroxiapatite and fluorapatite doped with Er/Yb and Tm/Yb were synthesized and characterized by FTIR, XRD, SEM and TEM methods. The results of up-conversion luminescence studies were presented for the samples as prepared, annealed at 500°C and at 900-1000 °C. At annealing above 800°C the ceramic state was formed. It is shown that fluorapatite host is more appropriate than hydroxiapatite host for rare ions luminescence and up-conversion processes. The post preparing annealing of nanarticles significantly enhanced the luminescence intensity. The Tm/Yb doped fluorapatite shows intense up-conversion luminescence in 790-800 nm spectral region and is potentially useful for biomedical applications.

Investigation of post-thermal annealing on material properties of Cu-In-Zn-Se thin films

NASA Astrophysics Data System (ADS)

Güllü, H. H.; Parlak, M.

2017-12-01

The Cu-In-Zn-Se thin film was synthesized by changing the contribution of In in chalcopyrite CuInSe2 with Zn. The XRD spectra of the films showed the characteristic diffraction peaks in a good agreement with the quaternary Cu-In-Zn-Se compound. They were in the polycrystalline nature without any post-thermal process, and the main orientation was found to be in the (112) direction with tetragonal crystalline structure. With increasing annealing temperature, the peak intensities in preferred orientation became more pronounced and grain sizes were in increasing behavior from 6.0 to 25.0 nm. The samples had almost the same atomic composition of Cu0.5In0.5ZnSe2. However, EDS results of the deposited films indicated that there was Se re-evaporation and/or segregation with the annealing in the structure of the film. According to the optical analysis, the transmittance values of the films increased with the annealing temperature. The absorption coefficient of the films was calculated as around 105 cm-1 in the visible region. Moreover, optical band gap values were found to be changing in between 2.12 and 2.28 eV depending on annealing temperature. The temperature-dependent dark- and photo-conductivity measurements were carried out to investigate the electrical characteristics of the films.

Low-temperature wafer direct bonding of silicon and quartz glass by a two-step wet chemical surface cleaning

NASA Astrophysics Data System (ADS)

Wang, Chenxi; Xu, Jikai; Zeng, Xiaorun; Tian, Yanhong; Wang, Chunqing; Suga, Tadatomo

2018-02-01

We demonstrate a facile bonding process for combining silicon and quartz glass wafers by a two-step wet chemical surface cleaning. After a post-annealing at 200 °C, strong bonding interfaces with no defects or microcracks were obtained. On the basis of the detailed surface and bonding interface characterizations, the bonding mechanism was explored and discussed. The amino groups terminated on the cleaned surfaces might contribute to the bonding strength enhancement during the annealing. This cost-effective bonding process has great potentials for silicon- and glass-based heterogeneous integrations without requiring a vacuum system.

Controlling Spatial Confinement Effects in La0.3Pr0.4Ca0.3MnO3 Microbridges via Post Ar and Air Annealing

NASA Astrophysics Data System (ADS)

Jeon, Jaechun; Jung, Jan; Chow, Kim H.

2017-08-01

We report the effects of post Ar and air annealing of La0.3Pr0.4Ca0.3MnO3 microbridges which do not initially show spatial confinement effects. The removal or addition of oxygen via the post annealing changes the sizes and distribution of the metallic and insulating phase domains within these films and can create spatial confinement effects such as percolation induced resistance jumps and tunneling magnetoresistance.

Optical and electrical responses of magnetron-sputtered amorphous Nb-doped TiO2 thin films annealed at low temperature

NASA Astrophysics Data System (ADS)

Quynh, Luu Manh; Tien, Nguyen Thi; Thanh, Pham Van; Hieu, Nguyen Minh; Doanh, Sai Cong; Thuat, Nguyen Tran; Tuyen, Nguyen Viet; Luong, Nguyen Hoang; Hoang, Ngoc Lam Huong

2018-03-01

Nb-doped TiO2 (TNO) thin films were prepared by annealing at 300 °C for 30 min after a magnetron-sputter process. A laser-irradiated post-annealing Raman scattering analysis indirectly showed the possible formation of small size anatase TNO clusters within the thin film matrix Although the TNO thin films were not crystallized, oxygen vacancies were created by adding H2 into the sputter gas during the deposition process. This improved the conductivity and carrier concentration of the thin films. As the ratio of H2 in sputter gas is f(H2) = [H2/Ar+H2] = 10%, the carrier concentration of the amorphous TNO thin film reached 1022 (cm-3) with the resistivity being about 10-2 (Ω.cm). Even though a new methodology to decrease the fabrication temperature is not presented; this study demonstrates an efficient approach to shorten the annealing process, which ends prior to the crystallization of the thin films. Besides, in situ H2 addition into the sputter atmosphere is proven to be a good solution to enhance the electrical conductivity of semiconductor thin films like TNOs, despite the fact that they are not well crystallized.

Formation of vacancy-impurity complexes in heavily Zn-doped InP

NASA Astrophysics Data System (ADS)

Slotte, J.; Saarinen, K.; Salmi, A.; Simula, S.; Aavikko, R.; Hautojärvi, P.

2003-03-01

Positron annihilation spectroscopy has been applied to observe the spontaneous formation of vacancy-type defects by annealing of heavily Zn-doped InP at 500 700 K. The defect is identified as the VP-Zn pair by detecting the annihilation of positrons with core electrons. We conclude that the defect is formed through a diffusion process; a phosphorus vacancy migrates until trapped by a Zn impurity and forms a negatively charged VP-Zn pair. The kinetics of the diffusion process is investigated by measuring the average positron lifetime as a function of annealing time and by fitting a diffusion model to the experimental results. We deduce a migration energy of 1.8±0.2 eV for the phosphorus vacancy. Our results explain both the presence of native VP-Zn pairs in Zn-doped InP and their disappearance in post-growth annealings.

Improved Turn-On and Operating Voltages in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

2017-10-01

While good ohmic contact formation has been achieved on both p-GaN and n-AlGaN surfaces, the turn-on and operating voltages of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) remain very high. We find that this critical problem is mainly caused by the large difference between the annealing temperatures required for ohmic contact formation on the p-GaN and high Al-fraction n-AlGaN surfaces. We studied the effects of the high-temperature annealing treatments required for n-ohmic contact formation on the subsequent p-ohmic contact formation process in DUV-LEDs. The results show that post-annealing treatment at high temperature is necessary to form an ohmic contact on n-Al0.7Ga0.3N, but a treatment temperature of 900°C or more could cause severe degradation of the specific contact resistivity and the bulk resistivity of p-GaN. We conclude that 900°C is the optimum temperature to form an ohmic contact on n-Al0.7Ga0.3N in DUV-LEDs, where p-GaN and n-Al0.7Ga0.3N act as the p- and n-ohmic contact layers, respectively. We also found that the specific contact resistivity of p-GaN can be reduced by an additional low-temperature annealing treatment after the high-temperature annealing step; this effect can be attributed to the enhancement of the hole concentration in the p-GaN surface contact region. Finally, DUV-LEDs that emit at 280 nm were fabricated using four different annealing treatments during processing. A considerable reduction in the series resistance and thereby in the operating voltage was confirmed using the annealing process proposed above, consisting of a high-temperature anneal at 900°C followed by a low-temperature anneal at 500°C for 3 min.

Synthesis of Platinum-nickel Nanowires and Optimization for Oxygen Reduction Performance.

PubMed

Alia, Shaun M; Pivovar, Bryan S

2018-04-27

Platinum-nickel (Pt-Ni) nanowires were developed as fuel cell electrocatalysts, and were optimized for the performance and durability in the oxygen reduction reaction. Spontaneous galvanic displacement was used to deposit Pt layers onto Ni nanowire substrates. The synthesis approach produced catalysts with high specific activities and high Pt surface areas. Hydrogen annealing improved Pt and Ni mixing and specific activity. Acid leaching was used to preferentially remove Ni near the nanowire surface, and oxygen annealing was used to stabilize near-surface Ni, improving durability and minimizing Ni dissolution. These protocols detail the optimization of each post-synthesis processing step, including hydrogen annealing to 250 °C, exposure to 0.1 M nitric acid, and oxygen annealing to 175 °C. Through these steps, Pt-Ni nanowires produced increased activities more than an order of magnitude than Pt nanoparticles, while offering significant durability improvements. The presented protocols are based on Pt-Ni systems in the development of fuel cell catalysts. These techniques have also been used for a variety of metal combinations, and can be applied to develop catalysts for a number of electrochemical processes.

Solution-Based Synthesis of Crystalline Silicon from Liquid Silane through Laser and Chemical Annealing

DOE PAGES

Iyer, Ganjigunte R. S.; Hobbie, Erik K.; Guruvenket, Srinivasan; ...

2012-05-23

We report a solution process for the synthesis of crystalline silicon from the liquid silane precursor cyclohexasilane (Si 6H 12). Polysilane films were crystallized through thermal and laser annealing, with plasma hydrogenation at atmospheric pressure generating further structural changes in the films. The evolution from amorphous to microcrystalline is characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and impedance spectroscopy. A four-decade enhancement in the electrical conductivity is attributed to a disorder-order transition in a bonded Si network. Lastly, our results demonstrate a potentially attractive approach that employs a solution process coupled with ambient post-processing tomore » produce crystalline silicon thin films.« less

Effect of Annealing Treatments on the Microstructure, Mechanical Properties and Corrosion Behavior of Direct Metal Laser Sintered Ti-6Al-4V

NASA Astrophysics Data System (ADS)

Xu, Yangzi; Lu, Yuan; Sundberg, Kristin L.; Liang, Jianyu; Sisson, Richard D.

2017-05-01

An experimental investigation on the effects of post-annealing treatments on the microstructure, mechanical properties and corrosion behavior of direct metal laser sintered Ti-6Al-4V alloys has been conducted. The microstructure and phase evolution as affected by annealing treatment temperature were examined through scanning electron microscopy and x-ray diffraction. The tensile properties and Vickers hardness were measured and compared to the commercial Grade 5 Ti-6Al-4V alloy. Corrosion behavior of the parts was analyzed electrochemically in simulated body fluid at 37 °C. It was found out that the as-printed parts mainly composed of non-equilibrium α' phase. Annealing treatment allowed the transformation from α' to α phase and the development of β phase. The tensile test results indicated that post-annealing treatment could improve the ductility and decrease the strength. The as-printed Ti-6Al-4V part exhibits inferior corrosion resistance compared to the commercial alloy, and post-annealing treatment can reduce its susceptibility to corrosion by reducing the two-phase interface area.

Effects of rolling temperature and subsequent annealing on mechanical properties of ultrafine-grained Cu–Zn–Si alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Xiangkai; Yang, Xuyue, E-mail: yangxuyue@csu.edu.cn; Institute for Materials Microstructure, Central South University, Changsha 410083

2015-08-15

The effects of rolling temperature and subsequent annealing on mechanical properties of Cu–Zn–Si alloy were investigated by using X-ray diffraction, transmission electron microscope, electron back scattered diffraction and tensile tests. The Cu–Zn–Si alloy has been processed at cryogenic temperature (approximately 77 K) and room temperature up to different rolling strains. It has been identified that the cryorolled Cu–Zn–Si alloy samples show a higher strength compared with those room temperature rolled samples. The improved strength of cryorolled samples is resulted from grain size effect and higher densities of dislocations and deformation twins. And subsequent annealing, as a post-heat treatment, enhanced themore » ductility. An obvious increase in uniform elongation appears when the volume fraction of static recrystallization grains exceeds 25%. The strength–ductility combination of the annealed cryorolled samples is superior to that of annealed room temperature rolled samples, owing to the finer grains, high fractions of high angle grain boundaries and twins. - Highlights: • An increase in hardness of Cu–Zn–Si alloy is noticed during annealing process. • Thermal stability is reduced in Cu–Zn–Si alloy by cryorolling. • An obvious enhancement in UE is noticed when fraction of SRX grains exceeds 25%. • A superior strength–ductility combination is achieved in the cryorolling samples.« less

Field electron emission enhancement in lithium implanted and annealed nitrogen-incorporated nanocrystalline diamond films

NASA Astrophysics Data System (ADS)

Sankaran, K. J.; Srinivasu, K.; Yeh, C. J.; Thomas, J. P.; Drijkoningen, S.; Pobedinskas, P.; Sundaravel, B.; Leou, K. C.; Leung, K. T.; Van Bael, M. K.; Schreck, M.; Lin, I. N.; Haenen, K.

2017-06-01

The field electron emission (FEE) properties of nitrogen-incorporated nanocrystalline diamond films were enhanced due to Li-ion implantation/annealing processes. Li-ion implantation mainly induced the formation of electron trap centers inside diamond grains, whereas post-annealing healed the defects and converted the a-C phase into nanographite, forming conduction channels for effective transport of electrons. This resulted in a high electrical conductivity of 11.0 S/cm and enhanced FEE performance with a low turn-on field of 10.6 V/μm, a high current density of 25.5 mA/cm2 (at 23.2 V/μm), and a high lifetime stability of 1,090 min for nitrogen incorporated nanocrystalline diamond films.

Phase-selective vanadium dioxide (VO2) nanostructured thin films by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Masina, B. N.; Lafane, S.; Wu, L.; Akande, A. A.; Mwakikunga, B.; Abdelli-Messaci, S.; Kerdja, T.; Forbes, A.

2015-10-01

Thin films of monoclinic nanostructured vanadium dioxide are notoriously difficult to produce in a selective manner. To date, post-annealing, after pulsed laser deposition (PLD), has been used to revert the crystal phase or to remove impurities, and non-glass substrates have been employed, thus reducing the efficacy of the transparency switching. Here, we overcome these limitations in PLD by optimizing a laser-ablation and deposition process through optical imaging of the laser-induced plasma. We report high quality monoclinic rutile-type vanadium dioxide (VO2) (M1) nanoparticles without post-annealing, and on a glass substrate. Our samples demonstrate a reversible metal-to-insulator transition at ˜43 °C, without any doping, paving the way to switchable transparency in optical materials at room temperature.

Layer-controllable graphene by plasma thinning and post-annealing

NASA Astrophysics Data System (ADS)

Zhang, Lufang; Feng, Shaopeng; Xiao, Shaoqing; Shen, Gang; Zhang, Xiumei; Nan, Haiyan; Gu, Xiaofeng; Ostrikov, Kostya (Ken)

2018-05-01

The electronic structure of graphene depends crucially on its layer number and therefore engineering the number of graphene's atomic stacking layers is of great importance for the preparation of graphene-based devices. In this paper, we demonstrated a relatively less invasive, high-throughput and uniform large-area plasma thinning of graphene based on direct bombardment effect of fast-moving ionic hydrogen or argon species. Any desired number of graphene layers including trilayer, bilayer and monolayer can be obtained. Structural changes of graphene layers are studied by optical microscopy, Raman spectroscopy and atomic force microscopy. Post annealing is adopted to self-heal the lattice defects induced by the ion bombardment effect. This plasma etching technique is efficient and compatible with semiconductor manufacturing processes, and may find important applications for graphene-based device fabrication.

Polycrystalline La1-xSrxMnO3 films on silicon: Influence of post-Deposition annealing on structural, (Magneto-)Optical, and (Magneto-)Electrical properties

NASA Astrophysics Data System (ADS)

Thoma, Patrick; Monecke, Manuel; Buja, Oana-Maria; Solonenko, Dmytro; Dudric, Roxana; Ciubotariu, Oana-Tereza; Albrecht, Manfred; Deac, Iosif G.; Tetean, Romulus; Zahn, Dietrich R. T.; Salvan, Georgeta

2018-01-01

The integration of La1-xSrxMnO3 (LSMO) thin film technology into established industrial silicon processes is regarded as challenging due to lattice mismatch, thermal expansion, and chemical reactions at the interface of LSMO and silicon. In this work, we investigated the physical properties of thin La0.73Sr0.27MnO3 films deposited by magnetron sputtering on silicon without a lattice matching buffer layer. The influence of a post-deposition annealing treatment on the structural, (magneto-)optical, and (magneto-)electrical properties was investigated by a variety of techniques. Using Rutherford backscattering spectroscopy, atomic force microscopy, Raman spectroscopy, and X-ray diffraction we could show that the thin films exhibit a polycrystalline, rhombohedral structure after a post-deposition annealing of at least 700 °C. The dielectric tensor in the spectral range from 1.7 eV to 5 eV determined from spectroscopic ellipsometry in combination with magneto-optical Kerr effect spectroscopy was found to be comparable to that of lattice matched films on single crystal substrates reported in literature [1]. The values of the metal-isolator transition temperature and temperature-dependent resistivities also reflect a high degree of crystalline quality of the thermally treated films.

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

PubMed

Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

2017-12-01

Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

10 CFR 50.66 - Requirements for thermal annealing of the reactor pressure vessel.

Code of Federal Regulations, 2014 CFR

2014-01-01

... be determined using the same basis as that used for the pre-anneal operating period. (B) The post... Annealing Report must include: a Thermal Annealing Operating Plan; a Requalification Inspection and Test... operation using appropriate test data. (iii) The methods, including heat source, instrumentation and...

10 CFR 50.66 - Requirements for thermal annealing of the reactor pressure vessel.

Code of Federal Regulations, 2013 CFR

2013-01-01

... be determined using the same basis as that used for the pre-anneal operating period. (B) The post... Annealing Report must include: a Thermal Annealing Operating Plan; a Requalification Inspection and Test... operation using appropriate test data. (iii) The methods, including heat source, instrumentation and...

10 CFR 50.66 - Requirements for thermal annealing of the reactor pressure vessel.

Code of Federal Regulations, 2012 CFR

2012-01-01

... be determined using the same basis as that used for the pre-anneal operating period. (B) The post... Annealing Report must include: a Thermal Annealing Operating Plan; a Requalification Inspection and Test... operation using appropriate test data. (iii) The methods, including heat source, instrumentation and...

10 CFR 50.66 - Requirements for thermal annealing of the reactor pressure vessel.

Code of Federal Regulations, 2010 CFR

2010-01-01

... be determined using the same basis as that used for the pre-anneal operating period. (B) The post... Annealing Report must include: a Thermal Annealing Operating Plan; a Requalification Inspection and Test... operation using appropriate test data. (iii) The methods, including heat source, instrumentation and...

Study of thermal annealing effect on Bragg gratings photo-inscribed in step-index polymer optical fibers

NASA Astrophysics Data System (ADS)

Hu, X.; Kinet, D.; Mégret, P.; Caucheteur, C.

2016-04-01

In this paper, both non-annealed and annealed trans-4-stilbenemethanol-doped step-index polymer optical fibers were photo-inscribed using a 325 nm HeCd laser with two different beam power densities reaching the fiber core. In the high density regime where 637 mW/mm2 are used, the grating reflectivity is stable over time after the photo-writing process but the reflected spectrum is of limited quality, as the grating physical length is limited to 1.2 mm. To produce longer gratings exhibiting more interesting spectral features, the beam is enlarged to 6 mm, decreasing the power density to 127 mW/mm2. In this second regime, the grating reflectivity is not stable after the inscription process but tends to decay for both kinds of fibers. A fortunate property in this case results from the possibility to fully recover the initial reflectivity using a post-inscription thermal annealing, where the gratings are annealed at 80 °C during 2 days. The observed evolutions for both regimes are attributed to the behavior of the excited intermediate states between the excited singlet and the ground singlet state of trans- and cis-isomers as well as the temperature-dependent glassy polymer matrix.

Thermal annealing evolution to physical properties of ZnS thin films as buffer layer for solar cell applications

NASA Astrophysics Data System (ADS)

Kaushalya; Patel, S. L.; Purohit, A.; Chander, S.; Dhaka, M. S.

2018-07-01

The conventional CdS window layer in solar cells is found to be hazardous for the environment due to toxic nature of the cadmium. Therefore, in order to seek an alternative, a study on effect of post-annealing treatment on physical properties of e-beam evaporated ZnS thin films has been carried out where films of thickness 150 nm were deposited on glass and indium tin oxide (ITO) substrates. The post annealing treatment was performed in air atmosphere within the temperature range from 100 °C to 500 °C. X-ray diffraction analysis reveals that the films on glass substrate are found to be amorphous at low temperature annealing (≤300 °C) while have α-ZnS hexagonal phase (wurtzite structure) at higher annealing. The patterns also show that the possibility of oxidation is increased significantly at temperature 500 °C which leads to decrease in direct band gap from 3.28 eV to 3.18 eV except films annealed at 300 °C (i.e. 3.39 eV). The maximum transmittance is found about 95% as a result of Doppler blue shift while electrical analysis indicated almost ohmic behavior between current and voltage and surface roughness is increased with post-annealing treatment.

Raman Studies on Pre- and Post-Processed CVD Graphene Films Grown under Various Nitrogen Carrier Gas Flows

NASA Astrophysics Data System (ADS)

Beh, K. P.; Yam, F. K.; Abdalrheem, Raed; Ng, Y. Z.; Suhaimi, F. H. A.; Lim, H. S.; Mat Jafri, M. Z.

2018-04-01

In this work, graphene films were grown on copper substrates using chemical vapour deposition method under various N2 carrier flow rate. The samples were characterized using Raman spectroscopy. Three sets of Raman measurements have been performed: graphene/Cu (as-grown samples), pre-annealed graphene/glass, and post-annealed graphene/glass. It was found that the Raman spectra of graphene/Cu samples possessed a hump-shaped baseline, additionally higher signal-to-noise ratio (SNR) that leads to attenuation graphene-related bands. Significant improvement of SNR and flat baseline were observed for graphene films transferred on glass substrate. Further analysis on the remaining sets of Raman spectra highlighted minute traces of polymethyl methacrylate (PMMA) could yield misleading results. Hence, the set of Raman spectra on annealed graphene/glass samples would be suitable in further elucidating the effects of N2 carrier flow towards graphene growth. From there, higher N2 flow implied dilution of methanol/H2 mixture, limiting interactions between reactants and substrate. This leads to smaller crystallite size and lesser graphene layers.

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells.

PubMed

Di, Dawei; Perez-Wurfl, Ivan; Gentle, Angus; Kim, Dong-Ho; Hao, Xiaojing; Shi, Lei; Conibeer, Gavin; Green, Martin A

2010-08-01

As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO(2)) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H(3)PO(4)) etching, nitrogen (N(2)) gas anneal and forming gas (Ar: H(2)) anneal on the cells' electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I-V, light I-V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.

Thermal process induced change of conductivity in As-doped ZnO

NASA Astrophysics Data System (ADS)

Su, S. C.; Fan, J. C.; Ling, C. C.

2012-02-01

Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method with different substrate temperature TS. Growing with the low substrate temperature of TS=200°C yielded n-type semi-insulating sample. Increasing the substrate temperature would yield p-type ZnO film and reproducible p-type film could be produced at TS~450°C. Post-growth annealing of the n-type As-doped ZnO sample grown at the low substrate temperature (TS=200°C) in air at 500°C also converted the film to p-type conductivity. Further increasing the post-growth annealing temperature would convert the p-type sample back to n-type. With the results obtained from the studies of positron annihilation spectroscopy (PAS), photoluminescence (PL), cathodoluminescence (CL), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and nuclear reaction analysis (NRA), we have proposed mechanisms to explain for the thermal process induced conduction type conversion as observed in the As-doped ZnO films.

Annealing of (DU-10Mo)-Zr Co-Rolled Foils

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pacheco, Robin Montoya; Alexander, David John; Mccabe, Rodney James

2017-01-20

Producing uranium-10wt% molybdenum (DU-10Mo) foils to clad with Al first requires initial bonding of the DU-10Mo foil to zirconium (Zr) by hot rolling, followed by cold rolling to final thickness. Rolling often produces wavy (DU-10Mo)-Zr foils that should be flattened before further processing, as any distortions could affect the final alignment and bonding of the Al cladding to the Zr co-rolled surface layer; this bonding is achieved by a hot isostatic pressing (HIP) process. Distortions in the (DU-10Mo)-Zr foil may cause the fuel foil to press against the Al cladding and thus create thinner or thicker areas in the Almore » cladding layer during the HIP cycle. Post machining is difficult and risky at this stage in the process since there is a chance of hitting the DU-10Mo. Therefore, it is very important to establish a process to flatten and remove any waviness. This study was conducted to determine if a simple annealing treatment could flatten wavy foils. Using the same starting material (i.e. DU-10Mo coupons of the same thickness), five different levels of hot rolling and cold rolling, combined with five different annealing treatments, were performed to determine the effect of these processing variables on flatness, bonding of layers, annealing response, microstructure, and hardness. The same final thickness was reached in all cases. Micrographs, textures, and hardness measurements were obtained for the various processing combinations. Based on these results, it was concluded that annealing at 650°C or higher is an effective treatment to appreciably reduce foil waviness.« less

Tunable ferromagnetic resonance behavior in Co2FeSi film by post-annealing

NASA Astrophysics Data System (ADS)

Xu, Zhan; Zhang, Zhi; Hu, Fang; Li, Xia; Liu, Peng; Liu, Er; Xu, Feng

2018-05-01

Co2FeSi film is potential in the spintronics applications, due to its low damping factor, which is reflected in the ferromagnetic resonance behavior. In this work, we demonstrate that the ferromagnetic resonance behavior in Co2FeSi film can be well engineered by post-annealing. After 450 °C post-annealing for 1 hour, the Gilbert damping factor decreases drastically from 0.039 at as-deposited state to 0.006, and the inhomogeneity contribution of ferromagnetic resonance linewidth decreases to 60.5 Oe. These decreases are ascribed to the crystallization of film from amorphous state to an ordered B2 phase. Higher annealing temperature, however, leads to the formation of the A2 phase with higher atomic disorder, instead of B2 phase, and brings about the increase of Gilbert damping.

10 CFR 50.66 - Requirements for thermal annealing of the reactor pressure vessel.

Code of Federal Regulations, 2011 CFR

2011-01-01

... be determined using the same basis as that used for the pre-anneal operating period. (B) The post... Annealing Report must include: a Thermal Annealing Operating Plan; a Requalification Inspection and Test... insulation, and on detrimental effects, if any, on containment and the biological shield. If the design...

Shock, Post-Shock Annealing, and Post-Annealing Shock in Ureilites

NASA Technical Reports Server (NTRS)

Rubin, Alan E.

2006-01-01

The thermal and shock histories of ureilites can be divided into four periods: 1) formation, 2) initial shock, 3) post-shock annealing, and 4) post-annealing shock. Period 1 occurred approx.4.55 Ga ago when ureilites formed by melting chondritic material. Impact events during period 2 caused silicate darkening, undulose to mosaic extinction in olivines, and the formation of diamond, lonsdaleite, and chaoite from indigenous carbonaceous material. Alkali-rich fine-grained silicates may have been introduced by impact injection into ureilites during this period. About 57% of the ureilites were unchanged after period 2. During period 3 events, impact-induced annealing caused previously mosaicized olivine grains to become aggregates of small unstrained crystals. Some ureilites experienced reduction as FeO at the edges of olivine grains reacted with C from the matrix. Annealing may also be responsible for coarsening of graphite in a few ureilites, forming euhedral-appearing, idioblastic crystals. Orthopyroxene in Meteorite Hills (MET) 78008 may have formed from pigeonite by annealing during this period. The Rb-Sr internal isochron age of approx.4.0 Ga for MET 78008 probably dates the annealing event. At this late date, impacts are the only viable heat source. About 36% of ureilites experienced period 3 events, but remained unchanged afterwards. During period 4, approx.7% of the ureilites were shocked again, as is evident in the polymict breccia, Elephant Moraine (EET) 83309. This rock contains annealed mosaicized olivine aggregates composed of small individual olivine crystals that exhibit undulose extinction. Ureilites may have formed by impact-melting chondritic material on a primitive body with heterogeneous O isotopes. Plagioclase was preferentially lost from the system due to its low impedance to shock compression. Brief melting and rapid burial minimized the escape of planetary-type noble gases from the ureilitic melts. Incomplete separation of metal from silicates during impact melting left ureilites with relatively high concentrations of trace siderophile elements.

Effects of heat treatment on U-Mo fuel foils with a zirconium diffusion barrier

NASA Astrophysics Data System (ADS)

Jue, Jan-Fong; Trowbridge, Tammy L.; Breckenridge, Cynthia R.; Moore, Glenn A.; Meyer, Mitchell K.; Keiser, Dennis D.

2015-05-01

A monolith fuel design based on U-Mo alloy has been selected as the fuel type for conversion of the United States' high performance research reactors (HPRRs) from highly enriched uranium (HEU) to low-enriched uranium (LEU). In this fuel design, a thin layer of zirconium is used to eliminate the direct interaction between the U-Mo fuel meat and the aluminum-alloy cladding during irradiation. The co-rolling process used to bond the Zr barrier layer to the U-Mo foil during fabrication alters the microstructure of both the U-10Mo fuel meat and the U-Mo/Zr interface. This work studied the effects of post-rolling annealing treatment on the microstructure of the co-rolled U-Mo fuel meat and the U-Mo/Zr interaction layer. Microscopic characterization shows that the grain size of U-Mo fuel meat increases with the annealing temperature, as expected. The grain sizes were ∼9, ∼13, and ∼20 μm for annealing temperature of 650, 750, and 850 °C, respectively. No abnormal grain growth was observed. The U-Mo/Zr interaction-layer thickness increased with the annealing temperature with an Arrhenius constant for growth of 184 kJ/mole, consistent with a previous diffusion-couple study. The interaction layer thickness was 3.2 ± 0.5 μm, 11.1 ± 2.1 μm, 27.1 ± 0.9 μm for annealing temperature of 650, 750, to 850 °C, respectively. The homogeneity of Mo improves with post rolling annealing temperature and with U-Mo coupon homogenization. The phases in the Zr/U-Mo interaction layer produced by co-rolling, however, differ from those reported in the previous diffusion couple studies.

Effects of heat treatment on U–Mo fuel foils with a zirconium diffusion barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jue, Jan-Fong; Trowbridge, Tammy L.; Breckenridge, Cynthia R.

A monolith fuel design based on U–Mo alloy has been selected as the fuel type for conversion of the United States’ high performance research reactors (HPRRs) from highly enriched uranium (HEU) to low-enriched uranium (LEU). In this fuel design, a thin layer of zirconium is used to eliminate the direct interaction between the U–Mo fuel meat and the aluminum-alloy cladding during irradiation. The co-rolling process used to bond the Zr barrier layer to the U–Mo foil during fabrication alters the microstructure of both the U–10Mo fuel meat and the U–Mo/Zr interface. This work studied the effects of post-rolling annealing treatmentmore » on the microstructure of the co-rolled U–Mo fuel meat and the U–Mo/Zr interaction layer. Microscopic characterization shows that the grain size of U–Mo fuel meat increases with the annealing temperature, as expected. The grain sizes were ~9, ~13, and ~20 μm for annealing temperature of 650, 750, and 850 °C, respectively. No abnormal grain growth was observed. The U–Mo/Zr interaction-layer thickness increased with the annealing temperature with an Arrhenius constant for growth of 184 kJ/mole, consistent with a previous diffusion-couple study. The interaction layer thickness was 3.2 ± 0.5 μm, 11.1 ± 2.1 μm, 27.1 ± 0.9 μm for annealing temperature of 650, 750, to 850 °C, respectively. The homogeneity of Mo improves with post rolling annealing temperature and with U–Mo coupon homogenization. The phases in the Zr/U–Mo interaction layer produced by co-rolling, however, differ from those reported in the previous diffusion couple studies.« less

Defect reduction in MBE-grown AlN by multicycle rapid thermal annealing

NASA Astrophysics Data System (ADS)

Greenlee, Jordan D.; Gunning, Brendan; Feigelson, Boris N.; Anderson, Travis J.; Koehler, Andrew D.; Hobart, Karl D.; Kub, Francis J.; Doolittle, W. Alan

2016-01-01

Multicycle rapid thermal annealing (MRTA) is shown to reduce the defect density of molecular beam epitaxially grown AlN films. No damage to the AlN surface occurred after performing the MRTA process at 1520°C. However, the individual grain structure was altered, with the emergence of step edges. This change in grain structure and diffusion of AlN resulted in an improvement in the crystalline structure. The Raman E2 linewidth decreased, confirming an improvement in crystal quality. The optical band edge of the AlN maintained the expected value of 6.2 eV throughout MRTA annealing, and the band edge sharpened after MRTA annealing at increased temperatures, providing further evidence of crystalline improvement. X-ray diffraction shows a substantial improvement in the (002) and (102) rocking curve FWHM for both the 1400 and 1520°C MRTA annealing conditions compared to the as-grown films, indicating that the screw and edge type dislocation densities decreased. Overall, the MRTA post-growth annealing of AlN lowers defect density, and thus will be a key step to improving optoelectronic and power electronic devices. [Figure not available: see fulltext.

Phase-selective vanadium dioxide (VO{sub 2}) nanostructured thin films by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Masina, B. N., E-mail: BMasina@csir.co.za, E-mail: slafane@cdta.dz; School of Physics, University of KwaZulu-Natal, Private Bag X54001, Durban 4000; Lafane, S., E-mail: BMasina@csir.co.za, E-mail: slafane@cdta.dz

2015-10-28

Thin films of monoclinic nanostructured vanadium dioxide are notoriously difficult to produce in a selective manner. To date, post-annealing, after pulsed laser deposition (PLD), has been used to revert the crystal phase or to remove impurities, and non-glass substrates have been employed, thus reducing the efficacy of the transparency switching. Here, we overcome these limitations in PLD by optimizing a laser-ablation and deposition process through optical imaging of the laser-induced plasma. We report high quality monoclinic rutile-type vanadium dioxide (VO{sub 2}) (M1) nanoparticles without post-annealing, and on a glass substrate. Our samples demonstrate a reversible metal-to-insulator transition at ∼43 °C, withoutmore » any doping, paving the way to switchable transparency in optical materials at room temperature.« less

Mesoscopic homogenization of semi-insulating GaAs by two-step post growth annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoffmann, B.; Jurisch, M.; Koehler, A.

1996-12-31

Mesoscopic homogenization of the electrical properties of s.i. LEC-GaAs is commonly realized by thermal treatment of the crystals including the steps of dissolution of arsenic precipitates, homogenization of excess As and re-precipitation by creating a controlled supersaturation. Caused by the inhomogeneous distribution of dislocations and the corresponding cellular structure along and across LEC-grown crystals a proper choice of the time-temperature program is necessary to minimize fluctuations of mesoscopic homogeneity. A modified two-step ingot annealing process is demonstrated to ensure the homogeneous distribution of mesoscopic homogeneity.

Synthesis of Platinum-nickel Nanowires and Optimization for Oxygen Reduction Performance

DOE PAGES

Alia, Shaun M.; Pivovar, Bryan S.

2018-01-01

Platinum-nickel (Pt-Ni) nanowires were developed as fuel cell electrocatalysts, and were optimized for the performance and durability in the oxygen reduction reaction. Spontaneous galvanic displacement was used to deposit Pt layers onto Ni nanowire substrates. The synthesis approach produced catalysts with high specific activities and high Pt surface areas. Hydrogen annealing improved Pt and Ni mixing and specific activity. Acid leaching was used to preferentially remove Ni near the nanowire surface, and oxygen annealing was used to stabilize near-surface Ni, improving durability and minimizing Ni dissolution. These protocols detail the optimization of each post-synthesis processing step, including hydrogen annealing tomore » 250 degrees C, exposure to 0.1 M nitric acid, and oxygen annealing to 175 degrees C. Through these steps, Pt-Ni nanowires produced increased activities more than an order of magnitude than Pt nanoparticles, while offering significant durability improvements. The presented protocols are based on Pt-Ni systems in the development of fuel cell catalysts. Furthermore, these techniques have also been used for a variety of metal combinations, and can be applied to develop catalysts for a number of electrochemical processes.« less

In-Flight Annealing of Magnetic Nanoparticles, Produced by the Particle Gun Technique

NASA Astrophysics Data System (ADS)

Stoyanov, S.; Skumryev, V.; Zhang, Y.; Huang, Y.; Hadjipanayis, G. C.

2003-03-01

The need of post annealing of nanocomposite structures aimed to form nanoparticles or to obtain a desired crystal structure often results in particles growth and/or a harmful alloying with the matrix material. In this study, we present a new technique to perform an in situ phase transformation of particles produced by the gas condensation process in a Particle Gun (PG). Particles are heat treated during their flight from the PG to the substrate, by absorption of light in a specially designed Heating Stage (HS), placed on the top of the PG. The total power of the light sources used is 2 kWatt. A simple model for the thermodynamic conditions in a single particle during the annealing process is developed. It is shown that the temperature of the particle depends on the light power and the size of the particle and can easily reach the required annealing values of 400 to 900^oC in a millisecond time scale. The versatility of this technique is demonstrated on the fabrication of high anisotropy FePt and SmCo particles, embedded in a carbon matrix. Work supported by NSF DMR9972035

Synthesis of Platinum-nickel Nanowires and Optimization for Oxygen Reduction Performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alia, Shaun M.; Pivovar, Bryan S.

Platinum-nickel (Pt-Ni) nanowires were developed as fuel cell electrocatalysts, and were optimized for the performance and durability in the oxygen reduction reaction. Spontaneous galvanic displacement was used to deposit Pt layers onto Ni nanowire substrates. The synthesis approach produced catalysts with high specific activities and high Pt surface areas. Hydrogen annealing improved Pt and Ni mixing and specific activity. Acid leaching was used to preferentially remove Ni near the nanowire surface, and oxygen annealing was used to stabilize near-surface Ni, improving durability and minimizing Ni dissolution. These protocols detail the optimization of each post-synthesis processing step, including hydrogen annealing tomore » 250 degrees C, exposure to 0.1 M nitric acid, and oxygen annealing to 175 degrees C. Through these steps, Pt-Ni nanowires produced increased activities more than an order of magnitude than Pt nanoparticles, while offering significant durability improvements. The presented protocols are based on Pt-Ni systems in the development of fuel cell catalysts. Furthermore, these techniques have also been used for a variety of metal combinations, and can be applied to develop catalysts for a number of electrochemical processes.« less

Photothermal heating as a methodology for post processing of polymeric nanofibers

NASA Astrophysics Data System (ADS)

Gorga, Russell; Clarke, Laura; Bochinski, Jason; Viswanath, Vidya; Maity, Somsubhra; Dong, Ju; Firestone, Gabriel

2015-03-01

Metal nanoparticles embedded within polymeric systems can be made to act as localized heat sources thereby aiding in-situ polymer processing. This is made possible by the surface plasmon resonance (SPR) mediated photothermal effect of metal (in this case gold) nanoparticles, wherein incident light absorbed by the nanoparticle generates a non-equilibrium electron distribution which subsequently transfers this energy into the surrounding medium, resulting in a temperature increase in the immediate region around the particle. Here we demonstrate this effect in polymer nanocomposite systems, specifically electrospun polyethylene oxide nanofibrous mats, which have been annealed at temperatures above the glass transition. A non-contact temperature measurement technique utilizing embedded fluorophores (perylene) has been used to monitor the average temperature within samples. The effect of annealing methods (conventional and photothermal) and annealing conditions (temperature and time) on the fiber morphology, overall crystallinity, and mechanical properties is discussed. This methodology is further utilized in core-sheath nanofibers to crosslink the core material, which is a pre-cured epoxy thermoset. NSF Grant CMMI-1069108.

Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

DOE PAGES

Campbell, Anne A.; Porter, Wallace D.; Katoh, Yutai; ...

2016-01-14

Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperaturemore » and removes possible user-introduced error while standardizing the analysis. In addition, this method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.« less

Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

NASA Astrophysics Data System (ADS)

Campbell, Anne A.; Porter, Wallace D.; Katoh, Yutai; Snead, Lance L.

2016-03-01

Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperature and removes possible user-introduced error while standardizing the analysis. This method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.

Evaluation of quantum confinement effect in nanocrystal Si dot layer by Raman spectroscopy.

PubMed

Mizukami, Y; Kosemura, D; Numasawa, Y; Ohshita, Y; Ogura, A

2012-11-01

Quantum confinement effect in the nanocrystal-Si (nc-Si) was evaluated by Raman spectroscopy. The nc-Si dot layers were fabricated by the H2 plasma treatment for the nucleation site formation followed by the SiH4 irradiation for the nc-Si growth. Post-oxidation annealing was also performed to improve the crystalline quality. After post-oxidation annealing for 5 or 10 min, the asymmetric broadening on the lower frequency sides in Raman spectra were obtained, which can be attributed to the phonon confinement effect in nc-Si. Furthermore we confirmed that hydrostatic stress of approximately 500 MPa was induced in nc-Si after post-oxidation annealing.

Effect of annealing on doping of graphene with molybdenum oxide

NASA Astrophysics Data System (ADS)

Ishikawa, Ryousuke; Watanabe, Sho; Nishida, Hiroki; Aoyama, Yuki; Oya, Tomoya; Nomoto, Takahiro; Tsuboi, Nozomu

2018-04-01

We investigated the effect of post-annealing on the doping of graphene with MoO3 in this study. The as-deposited molybdenum oxide thin film prepared using our method was not completely oxidized; in addition, it was in an amorphous state, due to which its doping effect was not significant. As the post-deposition annealing temperature was increased, the oxidation and crystallization of the molybdenum oxide progressed and the doping effect increased accordingly. After annealing at 350 °C, the holes were the most doped and the sheet resistance was the lowest. The doped graphene film obtained in this study shows higher doping effect and stability compared to other dopants.

Structural, optical, and ferromagnetic characterization of Sm-doped LaOCl nanocrystalline synthesized by solvothermal route: Significant effect of hydrogen post treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dakhel, A.A.

Pure and Sm-doped lanthanum oxychloride (LaOCl) nanomaterials were synthesized by solvothermal route followed by a subsequent heat treatment process. The objective of the present work is to study and develop conditions required to create stable room-temperature ferromagnetic (RT-FM) properties in LaOCl. To achieve that aim, magnetic samarium Sm{sup 3+} ions were used as dopant sources for stable FM properties. Systematic structural, optical, and magnetic properties of undoped and Sm-doped LaOCl samples were investigated as function of post-annealing conditions (temperature and atmosphere). The optical absorption properties were studied by diffuse reflection spectroscopy (DRS). The magnetic measurements reveal that Sm-doped LaOCl nanopowdersmore » have partial RT-FM properties due to the doped ions. The variations of magnetic properties with pre-annealing temperature were investigated. Furthermore, the electronic medium of host LaOCl crystalline lattice, which carries the spin-spin (S.S) exchange interaction between localised dopant Sm{sup 3+}(4f{sup 5}) spins, was developed by annealing in hydrogen gas (hydrogenation). It was established that annealing in hydrogen atmosphere boosts the RT-FM properties so that the saturation magnetisation could be increased by more than 100%. Physical explanations and discussions were given in this paper. Thus, it was proved that the magnetic properties could be tailored to diamagnetic LaOCl compound by Sm-doping and post treatment under H{sub 2} atmosphere. Therefore, LaOCl nanocrystals could be used as a potential candidate for optical phosphor applications with magnetic properties. - Graphical abstract: M-H dependence of Sm-doped LaOCl powders. Study the effect of hydrogenation. - Highlights: • Synthesis of Sm-doped LaOCl nanoparticles. • DM LaOCl transforms to FM with dilute concentration of Sm doping. • Annealing under H{sub 2} atmosphere induces drastic boost in the FM properties. • Saturation magnetization attained 29 memu/g with little doping and hydrogenation.« less

Influence of thermal annealing and radiation enhanced diffusion processes on surface plasmon resonance of gold implanted dielectric matrices

NASA Astrophysics Data System (ADS)

Devi, Ksh. Devarani; Ojha, Sunil; Singh, Fouran

2018-03-01

Gold nanoparticles (AuNPs) embedded in fused silica and sapphire dielectric matrices were synthesized by Au ion implantation. Systematic investigations were carried out to study the influence of implantation dose, post annealing temperature, swift heavy ion (SHI) irradiation and radiation enhanced diffusion (RED). Rutherford Backscattering Spectrometry (RBS) measurements were carried out to quantify concentration and depth profile of Au present in the host matrices. X-ray diffraction (XRD) was employed to characterize AuNPs formation. As-implanted and post-annealed films were irradiated using 100 MeV Ag ions to investigate the effect of electronic energy deposition on size and shape of NPs, which is estimated indirectly by the peak shape analysis of surface plasmon resonance (SPR). The effect of volume fraction of Au and their redistribution is also reported. A strong absorption in near infra red region is also noticed and understood by the formation of percolated NPs in dielectric matrices. It is quite clear from these results that the effect of RED assisted Oswald ripening is much more pronounced than the conventional Oswald ripening for the growth of NPs in the case of silica host matrices. However for sapphire matrices, it seems that growth of NPs already completed during implantation and it may be attributed to the high diffusivity of Au in sapphire matrices during implantation process.

Building mechanism for a high open-circuit voltage in an all-solution-processed tandem polymer solar cell.

PubMed

Kong, Jaemin; Lee, Jongjin; Kim, Geunjin; Kang, Hongkyu; Choi, Youna; Lee, Kwanghee

2012-08-14

Additional post-processing techniques, such as post-thermal annealing and UV illumination, were found to be required to obtain desirable values of the cell parameters in a tandem polymer solar cell incorporated with solution-processed basic n-type titanium sub-oxide (TiO(x))/acidic p-type poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) interlayers. Subsequent to the fabrication of the tandem polymer solar cells, the open-circuit voltage (V(OC)) of the cells exhibited half of the expected value. Only after the application of the post-treatments, the V(OC) of a tandem cell increased from the initial half-cell value (∼0.6 V) to its full-cell value (∼1.2 V). The selective light-biased incident photon-to-current efficiency (IPCE) measurements indicated that the initial V(OC) originated from the back subcell and that the application of the post-processing treatments revived the front subcell, such that the net photocurrent of the tandem cell was finally governed by a recombination process of holes from the back subcell and electrons from the front subcell. Based on our experimental results, we suggest that a V(OC) enhancement could be ascribed to two types of subsequent junction formations at the interface between the TiO(x) and PEDOT:PSS interlayers: an 'ion-mediated dipole junction', resulting from the electro-kinetic migration of cationic ions in the interlayers during post-thermal annealing in the presence of a low-work-function metal cathode, and a 'photoinduced Schottky junction', formed by increasing the charge carrier density in the n-type TiO(x) interlayer during UV illumination process. The two junctions separately contributed to the formation of a recombination junction through which the electrons in TiO(x) and the holes in PEDOT:PSS were able to recombine without substantial voltage drops.

Annealing of Co-Cr dental alloy: effects on nanostructure and Rockwell hardness.

PubMed

Ayyıldız, Simel; Soylu, Elif Hilal; Ide, Semra; Kılıç, Selim; Sipahi, Cumhur; Pişkin, Bulent; Gökçe, Hasan Suat

2013-11-01

The aim of the study was to evaluate the effect of annealing on the nanostructure and hardness of Co-Cr metal ceramic samples that were fabricated with a direct metal laser sintering (DMLS) technique. Five groups of Co-Cr dental alloy samples were manufactured in a rectangular form measuring 4 × 2 × 2 mm. Samples fabricated by a conventional casting technique (Group I) and prefabricated milling blanks (Group II) were examined as conventional technique groups. The DMLS samples were randomly divided into three groups as not annealed (Group III), annealed in argon atmosphere (Group IV), or annealed in oxygen atmosphere (Group V). The nanostructure was examined with the small-angle X-ray scattering method. The Rockwell hardness test was used to measure the hardness changes in each group, and the means and standard deviations were statistically analyzed by one-way ANOVA for comparison of continuous variables and Tukey's HSD test was used for post hoc analysis. P values of <.05 were accepted as statistically significant. The general nanostructures of the samples were composed of small spherical entities stacked atop one another in dendritic form. All groups also displayed different hardness values depending on the manufacturing technique. The annealing procedure and environment directly affected both the nanostructure and hardness of the Co-Cr alloy. Group III exhibited a non-homogeneous structure and increased hardness (48.16 ± 3.02 HRC) because the annealing process was incomplete and the inner stress was not relieved. Annealing in argon atmosphere of Group IV not only relieved the inner stresses but also decreased the hardness (27.40 ± 3.98 HRC). The results of fitting function presented that Group IV was the most homogeneous product as the minimum bilayer thickness was measured (7.11 Å). After the manufacturing with DMLS technique, annealing in argon atmosphere is an essential process for Co-Cr metal ceramic substructures. The dentists should be familiar with the materials that are used in clinic for prosthodontics treatments.

Evolution of Helium Bubbles and Discs in Irradiated 6H-SiC during Post-Implantation Annealing.

PubMed

Shen, Qiang; Zhou, Wei; Ran, Guang; Li, Ruixiang; Feng, Qijie; Li, Ning

2017-01-24

The single crystal 6H-SiC with [0001] crystal direction irradiated by 400 keV He⁺ ions with 1 × 10 17 ions/cm² fluence at 400 °C were annealed at 600, 900, 1200 and 1400 °C for different durations. The evolution of helium bubbles and discs was investigated by transmission electron microscopy. An irradiated layer distributed with fine helium bubbles was formed with a width of ~170 nm after helium ion irradiation. The size of gas bubbles increased with increasing annealing time and temperature and finally reached stable values at a given annealing temperature. According to the relationship between the bubble radii and annealing time, an empirical formula for calculating the bubble radii at the annealing temperature ranged from 600 to 1400 °C was given by fitting the experiment data. Planar bubble clusters (discs) were found to form on (0001) crystal plane at both sides of the bubble layer when the annealing temperature was at the range of 800-1200 °C. The mechanism of bubble growth during post-implantation annealing and the formation of bubble discs were also analyzed and discussed.

Northwest Africa 428: Impact-induced Annealing of an L6 Chondrite Breccia

NASA Technical Reports Server (NTRS)

Rubin, Alan E.

2006-01-01

Northwest Africa (NWA) 428 is an L chondrite that was successively thermally metamorphosed to petrologic type-6, shocked to stage S4-S5, brecciated, and annealed to approximately petrologic type-4. Its thermal and shock history resembles that of the previously studied LL6 chondrite, Miller Range (MIL) 99301, which formed on a different asteroid. The petrologic type-6 classification of NWA 428 is based on its highly recrystallized texture, coarse metal (150 +/- 150 micron), troilite (100 +/- 170 micron), and plagioclase (20-60 micron) grains, and relatively homogeneous olivine (Fa(sub 24.4 +/- 0.6)), low-Ca pyroxene (FS(sub 2.5+/- 0,4) , and plagioclase (Ab(sub 84.2 +/- 0.4) compositions. The petrographic criteria that indicate shock stage S4-S5 include the presence of chromite veinlets, chromite-plagioclase assemblages, numerous occurrences of metallic Cu, irregular troilite grains within metallic Fe-Ni, polycrystalline troilite, duplex plessite, metal and troilite veins, large troilite nodules, and low-Ca clinopyroxene with polysynthetic twins. If the rock had been shocked before thermal metamorphism, low-Ca clinopyroxene produced by the shock event would have transformed into orthopyroxene. Post-shock brecciation is indicated by the presence of recrystallized clasts and highly shocked clasts that form sharp boundaries with the host. Post-shock annealing is indicated by the sharp optical extinction of the olivine grains; during annealing, the damaged olivine crystal lattices healed. If temperatures exceeded those approximating petrologic type-4 (approximately 600-700 C) during annealing, the low-Ca clinopyroxene would have transformed into orthopyroxene. The other shock indicators, likewise, survived the mild annealing. An impact event is the most plausible source of post-metamorphic, post-shock annealing because any A1-26 that may have been present when the asteroid accreted would have decayed away by the time NWA 428 was annealed. The similar inferred histories of NWA 428 (L6) and MIL 99301 (LL6) indicate that impact heating affected more than 1 ordinary chondrite parent body.

Annealing texture of nanostructured IF steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jamaati, Roohollah, E-mail: jamaati@nit.ac.ir

In the present work, the evolution of annealing texture in nanostructured interstitial free steel fabricated via accumulative roll bonding (ARB) process was investigated. Textural evolution after post-annealing of ARB-processed samples was evaluated using X-ray diffraction. There were several texture transitions in the γ-fiber and ζ-fiber during ARB and post-annealing treatment. It was found that with increasing the number of ARB cycles, the volume fraction of the low angle grain boundary decreased and the high angle grain boundary fraction increased. Also, the shear texture was dominant after the first cycle, while for other samples, the rolling texture was dominant. The one-cyclemore » sample clearly indicated a weak α-fiber and γ-fiber and a relatively strong ζ-fiber. In addition, during the recrystallization and before the grain growth, the intensity of α-fiber and γ-fiber decreased, the intensity of ζ-fiber increased, and the intensity of (011)〈100〉 orientation in the ε-fiber and η-fiber increased. Moreover, it was concluded that the transition from the rolling texture to the shear one was a sign of occurrence of the recrystallization (before the grain growth). Finally, with increasing the number of ARB cycles, the intensity of rolling and shear textures saturated and a stable texture formed. - Highlights: • There were texture transitions in the γ-fiber and ζ-fiber. • When the number of cycles increased, the low angle grain boundaries decreased. • The shear texture was dominant after the first cycle. • Transition from rolling texture to shear one was a sign of recrystallization. • With increasing the number of ARB cycles, a stable texture formed.« less

Characterisation of a complex thin walled structure fabricated by selective laser melting using a ferritic oxide dispersion strengthened steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boegelein, Thomas, E-mail: t.boegelein@liv.ac.uk; Louvis, Eleftherios; Dawson, Karl

2016-02-15

Oxide dispersion strengthened (ODS) alloys exhibit superior mechanical and physical properties due to the presence of nanoscopic Y(Al, Ti) oxide precipitates, but their manufacturing process is complex. The present study is aimed at further investigation of the application of an alternative, Additive Manufacturing (AM) technique, Selective Laser Melting (SLM), to the production of consolidated ODS alloy components. Mechanically alloyed PM2000 (ODS-FeCrAl) powders have been consolidated and a fine dispersion of Y-containing precipitates were observed in an as built thin-walled component, but these particles were typically poly-crystalline and contained a variety of elements including O, Al, Ti, Cr and Fe. Applicationmore » of post-build heat treatments resulted in the modification of particle structures and compositions; in the annealed condition most precipitates were transformed to single crystal yttrium aluminium oxides. During the annealing treatment, precipitate distributions homogenised and localised variations in number density were diminished. The resulting volume fractions of those precipitates were 25–40% lower than have been reported in conventionally processed PM2000, which was attributed to Y-rich slag-like surface features and inclusions formed during SLM. - Highlights: • A wall structure was grown from ODS steel powder using selective laser melting. • A fine dispersion of nano-precipitates was apparent in as-build material. • Precipitates were multi-phased containing several elements, e.g. O, Ti, Al, Fe, Cr, Y. • Post-build annealing changed those into typically single-crystalline Y–Al–O. • The anneal also reduced and stabilised the volume fraction of precipitates to ~ 0.006.« less

Spade: An H Chondrite Impact-melt Breccia that Experienced Post-shock Annealing

NASA Technical Reports Server (NTRS)

Rubin, Alan E.; Jones, Rhian H.

2006-01-01

The low modal abundances of relict chondrules (1.8 Vol%) and of coarse (i.e. >= 2200 micron-size) isolated mafic silicate grains (1.8 Vol%) in Spade relative to mean H6 chondrites (11.4 and 9.8 vol%, respectively) show Spade to be a rock that has experienced a significant degree of melting. Various petrographic features (e.g., chromite-plagioclase assemblages, chromite veinlets, silicate darkening) indicate that melting was caused by shock. Plagioclase was melted during the shock event and flowed so that it partially to completely surrounded nearby mafic silicate grains. During crystallization, plagioclase developed igneous zoning. Low-Ca pyroxene that crystallized from the melt (or equilibrated with the melt at high temperatures) acquired relatively high amounts of CaO. Metallic Fe-Ni cooled rapidly below the Fe-Ni solws and transformed into martensite. Subsequent reheating of the rock caused transformation of martensite into abundant duplex plessite. Ambiguities exist in the shock stage assignment of Spade. The extensive silicate darkening, the occurrence of chromite-plagioclase assemblages, and the impact-melted characteristics of Spade are consistent with shock stage S6. Low shock (stage S2) is indicated by the undulose extinction and lack of planar fractures in olivine. This suggests that Spade reached a maximum prior shock level equivalent to stage S6 and then experienced post-shock annealing (probably to stage Sl). These events were followed by a less intense impact that produced the undulose extinction in the olivine, characteristic of shock stage S2. Annealing could have occurred if Spade were emplaced near impact melts beneath the crater floor or deposited in close proximity to hot debris within an ejecta blanket. Spade firmly establishes the case for post-shock annealing. This may have been a common process on ordinary chondrites (OC) asteroids.

Rapid Polyol-Assisted Microwave Synthesis of Nanocrystalline LiFePO4/C Cathode for Lithium-Ion Batteries.

PubMed

Paul, Baboo Joseph; Gim, Jihyeon; Baek, Sora; Kang, Jungwon; Song, Jinju; Kim, Sungjin; Kim, Jaekook

2015-08-01

Nanocrystalline LiFePO4/C has been synthesized under a very short period of time (90 sec) using a polyol-assisted microwave heating synthesis technique. The X-ray diffraction (XRD) data indicates that the rapidly synthesized materials correspond to phase pure olivine. Post-annealing of the as-prepared sample at 600 °C in argon atmosphere yields highly crystalline LiFePO4/C. The morphology of the samples studied using scanning electron microscopy (SEM) reveals the presence of secondary particles formed from aggregation of primary particles in the range of 30-50 nm. Transmission electron microscopy (TEM) images reveal a thin carbon layer coating on the surface of the primary particle. The charge/discharge studies indicate that the as-prepared and annealed LiFePO4/C samples delivered initial discharge capacities of 126 and 160 mA h g-1, respectively, with good capacity retentions at 0.05 mA cm-2 current densities. The post-annealing process indeed improves the crystallinity of the LiFePO4 nanocrystals, which enhances the electrode performance of LiFePO4/C.

Surface modification of cellulose acetate membrane using thermal annealing to enhance produced water treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kusworo, T. D., E-mail: tdkusworo@che.undip.ac.id; Aryanti, N., E-mail: nita.aryanti@gmail.com; Firdaus, M. M. H.

2015-12-29

This study is performed primarily to investigate the effect of surface modification of cellulose acetate using thermal annealing on the enhancement of membrane performance for produced water treatment. In this study, Cellulose Acetate membranes were casted using dry/wet phase inversion technique. The effect of additive and post-treatment using thermal annealing on the membrane surface were examined for produced water treatment. Therma annealing was subjected to membrane surface at 60 and 70 °C for 5, 10 and 15 second, respectively. Membrane characterizations were done using membrane flux and rejection with produced water as a feed, Scanning Electron Microscopy (SEM) and Fouriermore » Transform Infra Red (FTIR) analysis. Experimental results showed that asymmetric cellulose acetate membrane can be made by dry/wet phase inversion technique. The results from the Scanning Electron Microscopy (FESEM) analysis was also confirmed that polyethylene glycol as additivie in dope solution and thermal annealing was affected the morphology and membrane performance for produced water treatment, respectively. Scanning electron microscopy micrographs showed that the selective layer and the substructure of membrane became denser and more compact after the thermal annealing processes. Therefore, membrane rejection was significantly increased while the flux was slighty decreased, respectively. The best membrane performance is obtained on the composition of 18 wt % cellulose acetate, poly ethylene glycol 5 wt% with thermal annealing at 70° C for 15 second.« less

Post Deformation Annealing Behaviour of Mg-Al-Sn Alloys

NASA Astrophysics Data System (ADS)

Kabir, Abu Syed Humaun; Su, Jing; Sanjari, Mehdi; Jung, In-Ho; Yue, Stephen

In this study, effects of dynamically formed precipitates on the microstructure and texture evolutions were investigated after the post deformation annealing for various times. Two ternary alloys of Mg, Al and Sn were designed, produced and deformed at 300°C at a strain rate of 0.01s-1 to form different amounts of strain induced precipitates during deformation. Subsequent annealing at deformation temperature was performed for up to 4 hours. Microstructures and precipitation were investigated by optical and scanning electron microscopes and macro and micro-texture were measured by X-ray diffraction (XRD) and Electron Back-Scattered Diffraction (EBSD) techniques, respectively. It was found that certain amount of strain induced precipitates was necessary to prevent grain growth for a certain time during annealing by grain boundary pinning effect. Also, texture randomization was possible with the presence of precipitates after certain time of annealing.

Near-infrared localized surface plasmon resonance of self-growing W-doped VO2 nanoparticles at room temperature

NASA Astrophysics Data System (ADS)

Nishikawa, Kazutaka; Kishida, Yoshihiro; Ito, Kota; Tamura, Shin-ichi; Takeda, Yasuhiko

2017-11-01

Nanoparticles (NPs) of vanadium dioxide (VO2) in the metal state exhibit localized surface plasmon resonance (LSPR) at 1200-1600 nm, which fills the gap between the absorption ranges of silicon and the LSPR of conventional transparent conductor NPs (ZnO:Al, In2O3:Sn, etc.). However, two issues of the lithographic process for NP formation and the metal-insulator transition temperature (69 °C) higher than room temperature have made it difficult to use VO2 NPs for applications such as energy conversion devices, near infrared (NIR) light detectors, and bio-therapy. In this study, we developed a self-growing process for tungsten (W)-doped VO2 NPs that are in the metal state at room temperature, using sputter deposition and post-lamp annealing. The changes in the LSPR peak wavelengths with the NP size were well controlled by changing the deposited film thickness and oxygen pressure during the post-annealing treatment. The presented results resolve the difficulties of using the metal-insulator transition material VO2 for practical NIR utilization.

Effect of post annealing on spin accumulation and transport signals in Co{sub 2}FeSi/MgO/n{sup +}-Si on insulator devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiwari, Ajay, E-mail: ajay1.tiwari@toshiba.co.jp; Inokuchi, Tomoaki; Ishikawa, Mizue

The post annealing temperature dependence of spin accumulation and transport signals in Co{sub 2}FeSi/MgO/n{sup +}-Si on insulator were investigated. The spin signals were detected using 3- and 4-terminal Hanle, 2-terminal local and 4-terminal nonlocal magnetoresistance measurements. The post annealing temperature (T{sub A}) dependence of the magnitude in 3-terminal narrow Hanle signals is nearly constant up to T{sub A} < 400°C, however a slight decrease above T{sub A} ≥ 400°C is observed. This behavior is consistent with the T{sub A} dependence of the magnitude of 4-terminal nonlocal magnetoresistance (MR) signals. The spin polarization estimated from the 3-terminal narrow Hanle signals andmore » the magnitude of 2-terminal local MR signals show a slight improvement with increasing post annealing temperature with a peak at around 325°C and then start reducing slowly. The slight increase in the spin signal would be due to high spin polarization of Co{sub 2}FeSi as a result of structural ordering. The 2-terminal local MR signals do not vary significantly by annealing between as-deposited and T{sub A} = 400°C, indicating the robustness of our device. This result would be useful for future Si spintronics devices.« less

Optical properties and surface topography of CdCl2 activated CdTe thin films

NASA Astrophysics Data System (ADS)

Patel, S. L.; Purohit, A.; Chander, S.; Dhaka, M. S.

2018-05-01

The effect of post-CdCl2 heat treatment on optical properties and surface topography of evaporated CdTe thin films is investigated. The pristine and thermally annealed films were subjected to UV-Vis spectrophotometer and atomic force microscopy (AFM) to investigate the optical properties and surface topography, respectively. The absorbance is found to be maximum (˜90%) at 320°C temperature and transmittance found to be minimum and almost constant in ultraviolet and visible regions. The direct band gap is increased from 1.42 eV to 2.12 eV with post-CdCl2 annealing temperature. The surface topography revealed that the uniformity is improved with annealing temperature and average surface roughness is found in the range of 83.3-144.3 nm as well as grains have cylindrical hill-like shapes. The investigated results indicate that the post-CdCl2 treated films annealed at 320°C may be well-suitable for thin film solar cells as an absorber layer.

Surface characteristics, corrosion and bioactivity of chemically treated biomedical grade NiTi alloy.

PubMed

Chembath, Manju; Balaraju, J N; Sujata, M

2015-11-01

The surface of NiTi alloy was chemically modified using acidified ferric chloride solution and the characteristics of the alloy surface were studied from the view point of application as a bioimplant. Chemically treated NiTi was also subjected to post treatments by annealing at 400°C and passivation in nitric acid. The surface of NiTi alloy after chemical treatment developed a nanogrid structure with a combination of one dimensional channel and two dimensional network-like patterns. From SEM studies, it was found that the undulations formed after chemical treatment remained unaffected after annealing, while after passivation process the undulated surface was filled with oxides of titanium. XPS analysis revealed that the surface of passivated sample was enriched with oxides of titanium, predominantly TiO2. The influence of post treatment on the corrosion resistance of chemically treated NiTi alloy was monitored using Potentiodynamic Polarization and Electrochemical Impedance Spectroscopy (EIS) in Phosphate Buffered Saline (PBS) solution. In the chemically treated condition, NiTi alloy exhibited poor corrosion resistance due to the instability of the surface. On the other hand, the breakdown potential (0.8V) obtained was highest for the passivated samples compared to other surface treated samples. During anodic polarization, chemically treated samples displayed dissolution phenomenon which was predominantly activation controlled. But after annealing and passivation processes, the behavior of anodic polarization was typical of a diffusion controlled process which confirmed the enhanced passivity of the post treated surfaces. The total resistance, including the porous and barrier layer, was in the range of mega ohms for passivated surfaces, which could be attributed to the decrease in surface nickel content and formation of compact titanium oxide. The passivated sample displayed good bioactivity in terms of hydroxyapatite growth, noticed after 14days immersion in Hanks' solution. Copyright © 2015 Elsevier B.V. All rights reserved.

Annealing kinetics of radiation defects in boron-implanted p-Hg1‑xCdxTe

NASA Astrophysics Data System (ADS)

Talipov, Niyaz; Voitsekhovskii, Alexander

2018-06-01

The results of studying the annealing kinetics of the radiation-induced donor-type defects in boron implanted p-type Hg1‑x Cd x Te (MCT) are presented. The annealing kinetics of the radiation donor centers depend significantly on the dose of B+ ions, that is on the initial level of structural defects generated in the MCT lattice by ion bombardment. The activation energy E A of annealing of donor defects generated by implantation of B+ ions increases with increasing dose and temperature of the post-implantation heat treatment under the SiO2 cap. The smaller the dose and the higher the initial hole concentration in p-MCT, the lower the temperature of a complete annealing of donor centers, which lies in the range 220–275 °C. In the initial stages of the post-implantation heat treatment, primary donor defects are annealed, and then, more stable secondary impurity-defect complexes are annealed. It was established for the first time that the activation energy of the donor defects annealing in bulk crystals and heteroepitaxial structures of MCT has two clearly pronounced regions: at low temperatures 90–130 °C, E A = 0.06 eV and at Т = 150–250 °C, E A = 0.71–0.86 eV.

Impurity-induced disorder in III-nitride materials and devices

DOEpatents

Wierer, Jr., Jonathan J; Allerman, Andrew A

2014-11-25

A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.

Impact of time-dependent annealing on TiO2 films for CMOS application

NASA Astrophysics Data System (ADS)

Gyanan, Mondal, Sandip; Kumar, Arvind

2017-05-01

Post-deposition annealing (PDA) is the inherent part of sol-gel fabrication process to achieve the optimum device performance, especially in CMOS applications. The annealing removes the oxygen vacancies and improves the structural order of dielectric films. The process also reduces the interface related defects and improves the interfacial properties. In this work, we have integrated the sol-gel spin-coating deposited high-κ TiO2 films in MOS. The films are fired at 400°C for the duration of 20, 40, 60 and 80 min. The thicknesses of the films were found to be of ˜ 30 nm using ellipsometry. The (Al/TiO2/p-Si) devices were examined with current-voltage (I-V) and capacitance-voltage (C-V) at room temperature to understand the influence of firing time. The C-V and I-V characteristic showed a significant dependence on annealing time such as variation in dielectric constant and leakage current. The accumulation capacitance (Cox), dielectric constant (κ) and the equivalent oxide thickness (EOT) of the film fired for 60 min were found to be 458 pF, 33, and 4.25nm, respectively with a low leakage current density (1.09 × 10-6 A/cm2) fired for 80 min at +1 V.

Thermomechanical In Situ Monitoring of Bi2Te3 Thin Film and Its Relationship with Microstructure and Thermoelectric Performances

NASA Astrophysics Data System (ADS)

Jeong, Min-Woo; Na, Sekwon; Shin, Haishan; Park, Hong-Bum; Lee, Hoo-Jeong; Joo, Young-Chang

2018-07-01

Performance enhancement has been studied for thin-film thermoelectric materials for small-scale energy applications. The microstructural evolution of bismuth telluride (Bi2Te3) was investigated with respect to performance enhancement via in situ thermomechanical analysis due to the post-annealing process. The thermomechanical behavior of Bi2Te3 changes gradually at approximately 200 °C with the formation of a quintuple-layer structure, which was confirmed by X-ray diffraction, transmission electron microscopy and Raman spectroscopy. It was found that highly oriented (006), (0015) was formed with a quintuple-layer structure parallel to the substrate, and the E g 2 Raman vibration mode of Bi2Te3 significantly increased after forming the layer structure with decreased defects. Therefore, the slope of the stress curve was affected by the longer atomic distance of the van der Waals bonds with the formation of (00 l) oriented layered-structure grain. The decreased number of defects in the layer structure affects the electrical and thermal properties of the Bi2Te3 thin film. Due to the microstructural evolution, the power factor of Bi2Te3 was enhanced by approximately 14.8 times by the quintuple-layer structure of Bi2Te3 formed during the annealing process, which contributed to a better understanding of the performance enhancement via post-annealing and to research on other highly oriented layer structure materials.

Thermomechanical In Situ Monitoring of Bi2Te3 Thin Film and Its Relationship with Microstructure and Thermoelectric Performances

NASA Astrophysics Data System (ADS)

Jeong, Min-Woo; Na, Sekwon; Shin, Haishan; Park, Hong-Bum; Lee, Hoo-Jeong; Joo, Young-Chang

2018-04-01

Performance enhancement has been studied for thin-film thermoelectric materials for small-scale energy applications. The microstructural evolution of bismuth telluride (Bi2Te3) was investigated with respect to performance enhancement via in situ thermomechanical analysis due to the post-annealing process. The thermomechanical behavior of Bi2Te3 changes gradually at approximately 200 °C with the formation of a quintuple-layer structure, which was confirmed by X-ray diffraction, transmission electron microscopy and Raman spectroscopy. It was found that highly oriented (006), (0015) was formed with a quintuple-layer structure parallel to the substrate, and the Eg 2Raman vibration mode of Bi2Te3 significantly increased after forming the layer structure with decreased defects. Therefore, the slope of the stress curve was affected by the longer atomic distance of the van der Waals bonds with the formation of (00l) oriented layered-structure grain. The decreased number of defects in the layer structure affects the electrical and thermal properties of the Bi2Te3 thin film. Due to the microstructural evolution, the power factor of Bi2Te3 was enhanced by approximately 14.8 times by the quintuple-layer structure of Bi2Te3 formed during the annealing process, which contributed to a better understanding of the performance enhancement via post-annealing and to research on other highly oriented layer structure materials.

XANES study of Fe-implanted strontium titanate

NASA Astrophysics Data System (ADS)

Lobacheva, O.; Goncharova, L. V.; Chavarha, M.; Sham, T. K.

2014-03-01

Properties of strontium titanate SrTiO3 (STO) depend to a great extent on the substitutional dopants and defects of crystal structure. The ion beam implantation method was used for doping STO (001) crystals with Fe at different doses. Implanted samples were then annealed at 350°C in oxygen to induce recrystallization and remove oxygen vacancies produced during ion implantation process. The effect of Fe doping and post-implantation annealing was studied by X-ray Absorption Near Edge Spectroscopy (XANES) method and Superconducting Quantum Interference Device (SQUID). XANES allowed to monitor the change in structure of STO crystals and in the local environment of Fe following the implantation and annealing steps. SQUID measurements revealed correlation between magnetic moment and Fe implantation dose. Ferromagnetic hysteresis was observed on selected Fe-implanted STO at 5 K. The observed magnetic properties can be correlated with the several Fe oxide phases in addition to the presence of O/Ti vacancies.

Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors

NASA Astrophysics Data System (ADS)

Ha, Tae-Jun

2015-03-01

Metal-oxide based thin-film transistors (oxide-TFTs) are very promising for use in next generation electronics such as transparent displays requiring high switching and driving performance. In this study, we demonstrate an optimized process to secure excellent device performance with a favorable shift of the threshold voltage toward 0V in amorphous hafnium-indium-zinc-oxide (a-HfIZO) TFTs by using post-treatment with oxygen annealing. This enhancement results from the improved interfacial characteristics between gate dielectric and semiconductor layers due to the reduction in the density of interfacial states related to oxygen vacancies afforded by oxygen annealing. The device statistics confirm the improvement in the device-to-device and run-to-run uniformity. We also report on the photo-induced stability in such oxide-TFTs against long-term UV irradiation, which is significant for transparent displays.

High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC

NASA Astrophysics Data System (ADS)

Liu, Yu-Zhu; Li, Bing-Sheng; Zhang, Li

2017-05-01

Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The < 0001> -oriented 6H-SiC wafers are implanted with 15 keV helium ions at a dose of 1× 1017 cm-2 at room temperature. The samples with post-implantation are annealed at temperatures of 1073, 1173, 1273, and 1473 K for 30 min. He bubbles in the wafers are examined via cross-sectional transmission electron microscopy (XTEM) analysis. The results present that nanoscale bubbles are almost homogeneously distributed in the damaged layer of the as-implanted sample, and no significant change is observed in the He-implanted sample after 1073 K annealing. Upon 1193 K annealing, almost full recrystallization of He-implantation-induced amorphization in 6H-SiC is observed. In addition, the diameters of He bubbles increase obviously. With continually increasing temperatures to 1273 K and 1473 K, the diameters of He bubbles increase and the number density of lattice defects decreases. The growth of He bubbles after high temperature annealing abides by the Ostwald ripening mechanism. The mean diameter of He bubbles located at depths of 120-135 nm as a function of annealing temperature is fitted in terms of a thermal activated process which yields an activation energy of 1.914+0.236 eV. Supported by the National Natural Science Foundation of China under Grant No 11475229.

Influence of post-deposition annealing on structural, morphological and optical properties of copper (II) acetylacetonate thin films.

PubMed

Abdel-Khalek, H; El-Samahi, M I; El-Mahalawy, Ahmed M

2018-05-21

In this study, the effect of thermal annealing under vacuum conditions on structural, morphological and optical properties of thermally evaporated copper (II) acetylacetonate, cu(acac) 2 , thin films were investigated. The copper (II) acetylacetonate thin films were deposited using thermal evaporation technique at vacuum pressure ~1 × 10 -5  mbar. The deposited films were thermally annealed at 323, 373, 423, and 473 K for 2 h in vacuum. The thermogravimetric analysis of cu(acac) 2 powder indicated a thermal stability of cu(acac) 2 up to 423 K. The effects of thermal annealing on the structural properties of cu(acac) 2 were evaluated employing X-ray diffraction method and the analysis showed a polycrystalline nature of the as-deposited and annealed films with a preferred orientation in [1¯01] direction. Fourier transformation infrared (FTIR) technique was used to negate the decomposition of copper (II) acetylacetonate during preparation or/and annealing up to 423 K. The surface morphology of the prepared films was characterized by means of field emission scanning electron microscopy (FESEM). A significant enhancement of the morphological properties of cu(acac) 2 thin films was obtained till the annealing temperature reaches 423 K. The variation of optical constants that estimated from spectrophotometric measurements of the prepared thin films was investigated as a function of annealing temperature. The annealing process presented significantly impacted the nonlinear optical properties such as third-order optical susceptibility χ (3) and nonlinear refractive index n 2 of cu(acac) 2 thin films. Copyright © 2018 Elsevier B.V. All rights reserved.

Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics

NASA Astrophysics Data System (ADS)

Gyanan; Mondal, Sandip; Kumar, Arvind

2016-12-01

Post-deposition annealing (PDA) is an inherent part of a sol-gel fabrication process to achieve the optimum device performance, especially in CMOS applications. Annealing removes the oxygen vacancies and improves the structural order of the dielectric films. The process also reduces the interface related defects and improves the interfacial properties. Here, we applied a sol-gel spin-coating technique to prepare high-k TiO2 films on the p-Si substrate. These films were fired at 400 °C for the duration of 20, 40, 60 and 80 min to know the effects of annealing time on the device characteristics. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of annealed TiO2 films were examined in Al/TiO2/p-Si device configuration at room temperature. The 60 min annealed film gives the optimum performance and contained 69.5% anatase and 39.5% rutile phase with refractive index 2.40 at 550 nm. The C-V and I-V characteristic showed a significant dependence on annealing time such as variation in dielectric constant and leakage current. This allows us to tune the various electrical properties of MOS systems. The accumulation capacitance (Cox), dielectric constant (κ) and the equivalent oxide thickness (EOT) of the film fired for 60 min were found to be 458 pF, 33, and 4.25 nm, respectively with a low leakage current density (3.13 × 10-7 A/cm2) fired for 80 min at -1 V. The current conduction mechanisms at high bias voltage were dominated by trap-charge limited current (TCLC), while at small voltages, space charge limited current (SCLC) was more prominent.

Annealing of Co-Cr dental alloy: effects on nanostructure and Rockwell hardness

PubMed Central

Soylu, Elif Hilal; İde, Semra; Kılıç, Selim; Sipahi, Cumhur; Pişkin, Bulent; Gökçe, Hasan Suat

2013-01-01

PURPOSE The aim of the study was to evaluate the effect of annealing on the nanostructure and hardness of Co-Cr metal ceramic samples that were fabricated with a direct metal laser sintering (DMLS) technique. MATERIALS AND METHODS Five groups of Co-Cr dental alloy samples were manufactured in a rectangular form measuring 4 × 2 × 2 mm. Samples fabricated by a conventional casting technique (Group I) and prefabricated milling blanks (Group II) were examined as conventional technique groups. The DMLS samples were randomly divided into three groups as not annealed (Group III), annealed in argon atmosphere (Group IV), or annealed in oxygen atmosphere (Group V). The nanostructure was examined with the small-angle X-ray scattering method. The Rockwell hardness test was used to measure the hardness changes in each group, and the means and standard deviations were statistically analyzed by one-way ANOVA for comparison of continuous variables and Tukey's HSD test was used for post hoc analysis. P values of <.05 were accepted as statistically significant. RESULTS The general nanostructures of the samples were composed of small spherical entities stacked atop one another in dendritic form. All groups also displayed different hardness values depending on the manufacturing technique. The annealing procedure and environment directly affected both the nanostructure and hardness of the Co-Cr alloy. Group III exhibited a non-homogeneous structure and increased hardness (48.16 ± 3.02 HRC) because the annealing process was incomplete and the inner stress was not relieved. Annealing in argon atmosphere of Group IV not only relieved the inner stresses but also decreased the hardness (27.40 ± 3.98 HRC). The results of fitting function presented that Group IV was the most homogeneous product as the minimum bilayer thickness was measured (7.11 Å). CONCLUSION After the manufacturing with DMLS technique, annealing in argon atmosphere is an essential process for Co-Cr metal ceramic substructures. The dentists should be familiar with the materials that are used in clinic for prosthodontics treatments. PMID:24353888

Effect of annealing on optical properties and structure of the vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Zhu, Huiqun; Li, Yi; Li, Yuming; Huang, Yize; Tong, Guoxiang; Fang, Baoying; Zheng, Qiuxin; Li, Liu; Shen, Yujian

2012-10-01

VO2 thin films were prepared on soda-lime glass substrates by DC magnetron sputtering at room temperature using vanadium target and post annealing in air. X-ray diffraction and FTIR spectroscopy analyses showed that the films obtained at the optimized parameters have high VO2 (011) orientation. Both low temperature deposition and post annealing method were beneficial to grow the nano-films with pure VO2 phase-structure and composition. Metalinsulator transition properties of the VO2 films in terms of infrared transmittance, transmittance variation and film thickness were investigated under varying annealing temperature. Results showed that infrared transmittance variation and transition temperature of the nano-films were significantly improved and reduced respectively. Therefore, this study was able to develop practical low-cost preparation methods for high-performance intelligent energy-saving thin films.

Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride

PubMed Central

2013-01-01

The effects of different post-deposition annealing ambients (oxygen, argon, forming gas (95% N2 + 5% H2), and nitrogen) on radio frequency magnetron-sputtered yttrium oxide (Y2O3) films on n-type gallium nitride (GaN) substrate were studied in this work. X-ray photoelectron spectroscopy was utilized to extract the bandgap of Y2O3 and interfacial layer as well as establishing the energy band alignment of Y2O3/interfacial layer/GaN structure. Three different structures of energy band alignment were obtained, and the change of band alignment influenced leakage current density-electrical breakdown field characteristics of the samples subjected to different post-deposition annealing ambients. Of these investigated samples, ability of the sample annealed in O2 ambient to withstand the highest electric breakdown field (approximately 6.6 MV/cm) at 10−6 A/cm2 was related to the largest conduction band offset of interfacial layer/GaN (3.77 eV) and barrier height (3.72 eV). PMID:23360596

Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing

NASA Astrophysics Data System (ADS)

Huang, Shyh-Jer; Chou, Cheng-Wei; Su, Yan-Kuin; Lin, Jyun-Hao; Yu, Hsin-Chieh; Chen, De-Long; Ruan, Jian-Long

2017-04-01

In this paper, we present a technique to fabricate normally off GaN-based high-electron mobility transistor (HEMT) by sputtering and post-annealing p-NiOx capping layer. The p-NiOx layer is produced by sputtering at room temperature and post-annealing at 500 °C for 30 min in pure O2 environment to achieve high hole concentration. The Vth shifts from -3 V in the conventional transistor to 0.33 V, and on/off current ratio became 107. The forward and reverse gate breakdown increase from 3.5 V and -78 V to 10 V and -198 V, respectively. The reverse gate leakage current is 10-9 A/mm, and the off-state drain-leakage current is 10-8 A/mm. The Vth hysteresis is extremely small at about 33 mV. We also investigate the mechanism that increases hole concentration of p-NiOx after annealing in oxygen environment resulted from the change of Ni2+ to Ni3+ and the surge of (111)-orientation.

Impact of annealing on physical properties of e-beam evaporated polycrystalline CdO thin films for optoelectronic applications

NASA Astrophysics Data System (ADS)

Purohit, Anuradha; Chander, S.; Dhaka, M. S.

2017-04-01

An impact of annealing on the physical properties of polycrystalline CdO thin films is carried out in this study. CdO thin films of thickness 650 nm were fabricated on glass and indium tin oxide (ITO) substrates employing e-beam evaporation technique. The pristine thin films were annealed in air atmosphere at 250 °C, 400 °C and 550 °C for one hour followed by investigation of structural, optical, electrical and morphological properties along with elemental composition using X-ray diffraction (XRD), UV-Vis spectrophotometer, Fourier transform infrared (FTIR) spectrometer, source meter, scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS), respectively. XRD patterns confirmed the polycrystalline nature and cubic structure (with space group Fm 3 bar m) of the films. The crystallographic parameters are calculated and found to be influenced by the post-air annealing treatment. The optical study shows that direct band gap is ranging from 1.98 eV to 2.18 eV and found to be decreased with post-annealing. The refractive index and optical conductivity are also increased with annealing temperature. The current-voltage characteristics show ohmic behaviour of the annealed films. The surface morphology is observed to be improved with annealing and grain-size is increased as well as EDS spectrum confirmed the presence of cadmium (Cd) and oxygen (O) in the deposited films.

Interface trapping in (2 ¯ 01 ) β-Ga2O3 MOS capacitors with deposited dielectrics

NASA Astrophysics Data System (ADS)

Jayawardena, Asanka; Ramamurthy, Rahul P.; Ahyi, Ayayi C.; Morisette, Dallas; Dhar, Sarit

2018-05-01

The electrical properties of interfaces and the impact of post-deposition annealing have been investigated in gate oxides formed by low pressure chemical vapor deposition (LPCVD SiO2) and atomic layer deposition (Al2O3) on ( 2 ¯ 01 ) oriented n-type β-Ga2O3 single crystals. Capacitance-voltage based methods have been used to extract the interface state densities, including densities of slow `border' traps at the dielectric-Ga2O3 interfaces. It was observed that SiO2-β-Ga2O3 has a higher interface and border trap density than the Al2O3-β-Ga2O3. An increase in shallow interface states was also observed at the Al2O3-β-Ga2O3 interface after post-deposition annealing at higher temperature suggesting the high temperature annealing to be detrimental for Al2O3-Ga2O3 interfaces. Among the different dielectrics studied, LPCVD SiO2 was found to have the lowest dielectric leakage and the highest breakdown field, consistent with a higher conduction band-offset. These results are important for the processing of high performance β-Ga2O3 MOS devices as these factors will critically impact channel transport, threshold voltage stability, and device reliability.

Thermoluminescence, ESR and x-ray diffraction studies of CaSO4 : Dy phosphor subjected to post preparation high temperature thermal treatment

NASA Astrophysics Data System (ADS)

Bakshi, A. K.; Patwe, S. J.; Bhide, M. K.; Sanyal, B.; Natarajan, V.; Tyagi, A. K.; Kher, R. K.

2008-01-01

Thermoluminescence (TL), electron spin resonance (ESR) and x ray diffraction studies of CaSO4 : Dy phosphor subjected to post preparation high temperature treatment were carried out. Analysis of the TL glow curve indicated that the dosimetric glow peak at 240 °C reduces, whereas the low temperature satellite peak increases with the increase in the annealing temperature in the range 650-1000 °C. The influence of the annealing atmosphere on the TL glow curve structure was also observed. Reduction of the photoluminescence intensity of the annealed phosphor indicated that the environment of Dy3+ ions might have undergone some change due to high temperature treatment. Reduction in the ESR signal intensity corresponding to O_{3}^{-} and SO_{3}^{-} radicals was observed initially with the increase in the annealing temperaure; subsequently their intensity increased with temperature. Signals due to the SO_{4}^{-} radical vanished, when the phosphor was annealed beyond 800 °C. A signal corresponding to SH2- radicals was also observed in the ESR spectra for samples subjected to annealing in the temperature regime 800-1000 °C. XRD of the in situ annealed phosphor showed a change in the unit cell parameters. An endothermic peak at 860 °C in the DTA spectrum was observed.

Infrared defect dynamics—Nitrogen-vacancy complexes in float zone grown silicon introduced by electron irradiation

NASA Astrophysics Data System (ADS)

Inoue, Naohisa; Kawamura, Yuichi

2018-05-01

The interaction of nitrogen and intrinsic point defects, vacancy (V) and self-interstitial (I), was examined by infrared absorption spectroscopy on the electron irradiated and post-annealed nitrogen doped float zone (FZ) silicon crystal. Various absorption lines were observed, at 551 cm-1 in as-grown samples, at 726 and 778 cm-1 in as-irradiated samples (Ir group), at 689 cm-1 after post-annealing at 400 °C and above (400 °C group), at 762 and 951 cm-1 after annealing at 600 °C (600 °C group), and at 714 cm-1 up to 800 °C (800 °C group). By irradiation, a part of N2 was changed into the Ir group. VN2 is the candidate for the origin of the Ir group. By the post annealing at 400 and 600 °C, a part of N2 and the Ir group were changed into the 400 °C group, to less extent at 600 °C. V2N2 is the candidate for the origin of the 400 °C group. By annealing at 600 °C, most of the Ir group turned into 400 °C and 600 °C groups. By annealing at 800 °C, N2 recovered almost completely, and most other complexes were not observed. Recently, lifetime degradation has been observed in the nitrogen doped FZ Si annealed at between 450 and 800 °C. The N-V interaction in the same temperature range revealed here will help to understand the lifetime degradation mechanism. The behavior of the 689 cm-1 line corresponded well to the lifetime degradation.

Welding processes for Inconel 718- A brief review

NASA Astrophysics Data System (ADS)

Tharappel, Jose Tom; Babu, Jalumedi

2018-03-01

Inconel 718 is being extensively used for high-temperature applications, rocket engines, gas turbines, etc. due to its ability to maintain high strength at temperatures range 450-700°C complimented by excellent oxidation and corrosion resistance and its outstanding weldability in either the age hardened or annealed condition. Though alloy 718 is reputed to possess good weldability in the context of their resistance to post weld heat treatment cracking, heat affected zone (HAZ) and weld metal cracking problems persist. This paper presents a brief review on welding processes for Inconel 718 and the weld defects, such as strain cracking during post weld heat treatment, solidification cracking, and liquation cracking. The effect of alloy chemistry, primary and secondary processing on the HAZ cracking susceptibility, influence of post/pre weld heat treatments on precipitation, segregation reactions, and effect of grain size etc. discussed and concluded with future scope for research.

Self-Healing Thermal Annealing: Surface Morphological Restructuring Control of GaN Nanorods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Conroy, Michele; Li, Haoning; Zubialevich, Vitaly Z.

With advances in nanolithography and dry etching, top-down methods of nanostructuring have become a widely used tool for improving the efficiency of optoelectronics. These nano dimensions can offer various benefits to the device performance in terms of light extraction and efficiency, but often at the expense of emission color quality. Broadening of the target emission peak and unwanted yellow luminescence are characteristic defect-related effects due to the ion beam etching damage, particularly for III–N based materials. In this article we focus on GaN based nanorods, showing that through thermal annealing the surface roughness and deformities of the crystal structure canmore » be “self-healed”. Correlative electron microscopy and atomic force microscopy show the change from spherical nanorods to faceted hexagonal structures, revealing the temperature-dependent surface morphology faceting evolution. The faceted nanorods were shown to be strain- and defect-free by cathodoluminescence hyperspectral imaging, micro-Raman, and transmission electron microscopy (TEM). In-situ TEM thermal annealing experiments allowed for real time observation of dislocation movements and surface restructuring observed in ex-situ annealing TEM sampling. This thermal annealing investigation gives new insight into the redistribution path of GaN material and dislocation movement post growth, allowing for improved understanding and in turn advances in optoelectronic device processing of compound semiconductors.« less

Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

NASA Astrophysics Data System (ADS)

To, C. K.; Yang, B.; Su, S. C.; Ling, C. C.; Beling, C. D.; Fung, S.

2011-12-01

Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 °C. Post-growth annealing in air was carried out up to a temperature of 1000 °C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 °C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 × 1017 cm-3 at the annealing temperature of 600 °C. The origin of the p-type conductivity was consistent with the AsZn(VZn)2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the AsZn(VZn)2 acceptor and the creation of the deep level defect giving rise to the green luminescence.

Effects of Neutron Irradiation and Post-irradiation Annealing on the Microstructure of HT-UPS Stainless Steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Chi; Chen, Wei-Ying; Zhang, Xuan

Microstructural changes resulted from neutron irradiation and post-irradiation annealing in a high-temperature ultra-fine precipitate strengthened (HT-UPS) stainless steel were characterized using transmission electron microscopy (TEM) and atom probe tomography (APT). Three HT-UPS samples were neutron-irradiated to 3 dpa at 500 °C, and after irradiation, two of them were annealed for 1 h at 600 °C and 700 °C, respectively. Frank dislocation loops were the dominant defect structure in both the as-irradiated and 600 °C post-irradiation-annealed (PIAed) samples, and the loop sizes and densities were similar in these two samples. Unfaulted dislocation loops were observed in the 700 °C PIAed sample, and the loop density was greatly reducedmore » in comparison with that in the as-irradiated sample. Nano-sized MX precipitates were observed under TEM in the 700 °C PIAed sample, but not in the 600 °C PIAed or the as-irradiated samples. The titanium-rich clusters were identified in all three samples using APT. The post-irradiation annealing (PIA) caused the growth of the Ti-rich clusters with a stronger effect at 700 °C than at 600 °C. The irradiation caused elemental segregations at the grain boundary and the grain interior, and the grain boundary segregation behavior is consistent with observations in other irradiated austenitic steels. APT results showed that PIA reduced the magnitude of irradiation induced segregations.« less

Effect of Annealing Processes on Cu-Zr Alloy Film for Copper Metallization

NASA Astrophysics Data System (ADS)

Wang, Ying; Li, Fu-yin; Tang, Bin-han

2017-12-01

The effect of two different annealing processes on the microstructure and barrier-forming ability of Cu-Zr alloy films has been investigated. Cu-Zr alloy films were deposited directly onto SiO2/Si substrates via direct current magnetron sputtering and subsequently annealed by the vacuum annealing process (VAP) or rapid annealing process under argon atmosphere at temperatures 350°C, 450°C, and 550°C. Then, the microstructure, interface characteristics, and electrical properties of the samples were measured. After annealing, the samples showed a preferential (111) crystal orientation, independent of the annealing process. After two annealing methods, Zr aggregated at the Cu-Zr/SiO2 interface and no serious interdiffusion occurred between Cu and Si. The leakage current measurements revealed that the samples annealed by VAP show a higher reliability. According to the results, the vacuum annealing has better barrier performance than the rapid annealing when used for the fabrication of Cu-based interconnects.

The Effects of Prior Cold Work on the Shock Response of Copper

NASA Astrophysics Data System (ADS)

Millett, J. C. F.; Higgins, D. L.; Chapman, D. J.; Whiteman, G.; Jones, I. P.; Chiu, Y.-L.

2018-04-01

A series of experiments have been performed to probe the effects of dislocation density on the shock response of copper. The shear strength immediately behind the shock front has been measured using embedded manganin stress gauges, whilst the post shock microstructural and mechanical response has been monitored via one-dimensional recovery experiments. Material in the half hard (high dislocation density) condition was shown to have both a higher shear strength and higher rate of change of shear strength with impact stress than its annealed (low dislocation density) counterpart. Microstructural analysis showed a much higher dislocation density in the half hard material compared to the annealed after shock loading, whilst post shock mechanical examination showed a significant degree of hardening in the annealed state with reduced, but still significant amount in the half hard state, thus showing a correlation between temporally resolved stress gauge measurements and post shock microstructural and mechanical properties.

Single-crystal-like GdNdO{sub x} thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ziwei; Xiao, Lei; Liang, Renrong, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn

2016-06-15

Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibitedmore » a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.« less

Dense nanocrystalline yttrium iron garnet films formed at room temperature by aerosol deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Scooter D., E-mail: scooter.johnson@nrl.navy.mil; Glaser, Evan R.; Cheng, Shu-Fan

Highlights: • We deposit yttrium iron garnet films at room temperature using aerosol deposition. • Films are 96% of theoretical density for yttrium iron garnet. • We report magnetic and structural properties post-deposition and post-annealing. • Low-temperature annealing decreases the FMR linewidth. • We discuss features of the FMR spectra at each anneal temperature. - Abstract: We have employed aerosol deposition to form polycrystalline yttrium iron garnet (YIG) films on sapphire at room temperature that are 90–96% dense. We characterize the structural and dynamic magnetic properties of the dense films using scanning electron microscopy, X-ray diffraction, and ferromagnetic resonance techniques.more » We find that the as-deposited films are pure single-phase YIG formed of compact polycrystallites ∼20 nm in size. The ferromagnetic resonance mode occurs at 2829 G with a linewidth of 308 G. We perform a series of successive anneals up to 1000 °C on a film to explore heat treatment on the ferromagnetic resonance linewidth. We find the narrowest linewidth of 98 G occurs after a 750 °C anneal.« less

Carrier Compensation Induced by Thermal Annealing in Al-Doped ZnO Films

PubMed Central

Koida, Takashi; Kaneko, Tetsuya; Shibata, Hajime

2017-01-01

This study investigated carrier compensation induced by thermal annealing in sputtered ZnO:Al (Al2O3: 0.25, 0.5, 1.0, and 2.0 wt %) films. The films were post-annealed in a N2 atmosphere at low (1 × 10−23 atm) and high (1 × 10−4 atm) oxygen partial pressures (PO2). In ZnO:Al films with low Al contents (i.e., 0.25 wt %), the carrier density (n) began to decrease at annealing temperatures (Ta) of 600 °C at low PO2. At higher PO2 and/or Al contents, n values began to decrease significantly at lower Ta (ca. 400 °C). In addition, Zn became desorbed from the films during heating in a high vacuum (i.e., <1 × 10−7 Pa). These results suggest the following: (i) Zn interstitials and Zn vacancies are created in the ZnO lattice during post-annealing treatments, thereby leading to carrier compensation by acceptor-type Zn vacancies; (ii) The compensation behavior is significantly enhanced for ZnO:Al films with high Al contents. PMID:28772501

Design and Fabrication of Full Wheatstone-Bridge-Based Angular GMR Sensors.

PubMed

Yan, Shaohua; Cao, Zhiqiang; Guo, Zongxia; Zheng, Zhenyi; Cao, Anni; Qi, Yue; Leng, Qunwen; Zhao, Weisheng

2018-06-05

Since the discovery of the giant magnetoresistive (GMR) effect, GMR sensors have gained much attention in last decades due to their high sensitivity, small size, and low cost. The full Wheatstone-bridge-based GMR sensor is most useful in terms of the application point of view. However, its manufacturing process is usually complex. In this paper, we present an efficient and concise approach to fabricate a full Wheatstone-bridge-based angular GMR sensor by depositing one GMR film stack, utilizing simple patterned processes, and a concise post-annealing procedure based on a special layout. The angular GMR sensor is of good linear performance and achieves a sensitivity of 0.112 mV/V/Oe at the annealing temperature of 260 °C in the magnetic field range from -50 to +50 Oe. This work provides a design and method for GMR-sensor manufacturing that is easy for implementation and suitable for mass production.

Control over photo-inscription and thermal annealing to obtain high-quality Bragg gratings in doped PMMA optical fibers.

PubMed

Hu, Xuehao; Kinet, Damien; Mégret, Patrice; Caucheteur, Christophe

2016-07-01

Bragg gratings are photo-inscribed in trans-4-stilbenemethanol doped PMMA fibers using a 325 nm He-Cd laser and a phase mask. Two distinct behaviors are reported depending on the laser power density. In the high-density regime with 637  mW/mm², the grating reflectivity is stable over time after the writing process, but the reflected spectrum is of limited quality, as the grating length is limited to the laser width (1.2 mm). The beam is then enlarged to 6 mm, decreasing the power density to 127  mW/mm². In this case, the grating reflectivity strongly decays after the writing process. A fortunate property here results from the recovery of the initial reflectivity using a post-inscription thermal annealing. Both behaviors are attributed to the evolution between trans- and cis-isomers.

High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications.

PubMed

Horng, Ray-Hua; Shen, Kun-Ching; Yin, Chen-Yang; Huang, Chiung-Yi; Wuu, Dong-Sing

2013-06-17

High performance of Ga-doped ZnO (GZO) prepared using metalorganic chemical vapor deposition (MOCVD) was employed in GaN blue light-emitting diodes (LEDs) as transparent conductive layers (TCL). By the post-annealing process, the annealed 800°C GZO films exhibited a high transparency above 97% at wavelength of 450 nm. The contact resistance of GZO decreased with the annealing temperature increasing. It was attributed to the improvement of the GZO crystal quality, leading to an increase in electron concentration. It was also found that some Zn atom caused from the decomposition process diffused into the p-GaN surface of LED, which generated a stronger tunneling effect at the GZO/p-GaN interface and promoted the formation of ohmic contact. Moreover, contrast to the ITO-LED, a high light extraction efficiency of 77% was achieved in the GZO-LED at injection current of 20 mA. At 350 mA injection current, the output power of 256.51 mW of GZO-LEDs, corresponding to a 21.5% enhancement as compared to ITO-LEDs was obtained; results are promising for the development of GZO using the MOCVD technique for GaN LED applications.

Fabrication of Cu2SnS3 thin films by ethanol-ammonium solution process by doctor-blade technique

NASA Astrophysics Data System (ADS)

Wang, Yaguang; Li, Jianmin; Xue, Cong; Zhang, Yan; Jiang, Guoshun; Liu, Weifeng; Zhu, Changfei

2017-11-01

In the present study, a low-cost and simple method is applied to fabricate Cu2SnS3 (CTS) thin films. Namely CTS thin films are prepared by a doctor-blade method with a slurry dissolving the Cu2O and SnS powders obtained from CBD reaction solution into ethanol-ammonium solvents. Series of characterization methods including XRD, Raman spectra, SEM and UV-Vis analyses are introduced to investigate the phase structure, morphology and optical properties of CTS thin films. As a result, monoclinic CTS films have been obtained with the disappearance of binary phases CuS and SnS2 while increasing the annealing temperature and time, high quality monoclinic CTS thin films consisting of compact and large grains have been successfully prepared by this ethanol-ammonium method. Moreover, the secondary phase Cu2Sn3S7 is also observed during the annealing process. In addition, the post-annealed CTS film with a band-gap about 0.89 eV shows excellent absorbance between 400 and 1200 nm, which is proper for the bottom layer in multi-junction thin film solar cells.[Figure not available: see fulltext.

Investigation of Thermal Processing on the Properties of PS304: A Solid Lubricant Coating

NASA Technical Reports Server (NTRS)

Benoy, Patricia A.; Williams, Syreeta (Technical Monitor)

2002-01-01

The effect of thermal processing on PS304, a solid lubricant coating, was investigated. PS304 is a plasma sprayed solid lubricant consisting of 10% Ag and 10% BaF2 and CaF2 in a eutectic mixture for low and high temperature lubricity respectively. In addition, PS304 contains 20% Cr2O3 for increased hardness and 60% NiCr which acts as a binder. All percents are in terms of weight not volume. Previous research on thermal processing (NAG3-2245) of PS304 revealed that substrate affected both the pre- and post-anneal hardness of the plasma spray coating. The objective of this grant was to both quantify this effect and determine whether the root cause was an artifact of the substrate or an actual difference in hardness due to interaction between the substrate and the coating. In addition to clarifying past research developments new data was sought in terms of coating growth due to annealing.

Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC

NASA Astrophysics Data System (ADS)

Suvanam, Sethu Saveda; Usman, Muhammed; Martin, David; Yazdi, Milad. G.; Linnarsson, Margareta; Tempez, Agnès; Götelid, Mats; Hallén, Anders

2018-03-01

In this paper we demonstrate a process optimization of atomic layer deposited Al2O3 on 4H-SiC resulting in an improved interface and electrical properties. For this purpose the samples have been treated with two pre deposition surface cleaning processes, namely CP1 and CP2. The former is a typical surface cleaning procedure used in SiC processing while the latter have an additional weak RCA1 cleaning step. In addition to the cleaning and deposition, the effects of post dielectric annealing (PDA) at various temperatures in N2O ambient have been investigated. Analyses by scanning electron microscopy show the presence of structural defects on the Al2O3 surface after annealing at 500 and 800 °C. These defects disappear after annealing at 1100 °C, possibly due to densification of the Al2O3 film. Interface analyses have been performed using X-ray photoelectron spectroscopy (XPS) and time-of-flight medium energy ion scattering (ToF MEIS). Both these measurements show the formation of an interfacial SiOx (0 < x < 2) layer for both the CP1 and CP2, displaying an increased thickness for higher temperatures. Furthermore, the quality of the sub-oxide interfacial layer was found to depend on the pre deposition cleaning. In conclusion, an improved interface with better electrical properties is shown for the CP2 sample annealed at 1100 °C, resulting in lower oxide charges, strongly reduced flatband voltage and leakage current, as well as higher breakdown voltage.

Finding Maximum Cliques on the D-Wave Quantum Annealer

DOE PAGES

Chapuis, Guillaume; Djidjev, Hristo; Hahn, Georg; ...

2018-05-03

This work assesses the performance of the D-Wave 2X (DW) quantum annealer for finding a maximum clique in a graph, one of the most fundamental and important NP-hard problems. Because the size of the largest graphs DW can directly solve is quite small (usually around 45 vertices), we also consider decomposition algorithms intended for larger graphs and analyze their performance. For smaller graphs that fit DW, we provide formulations of the maximum clique problem as a quadratic unconstrained binary optimization (QUBO) problem, which is one of the two input types (together with the Ising model) acceptable by the machine, andmore » compare several quantum implementations to current classical algorithms such as simulated annealing, Gurobi, and third-party clique finding heuristics. We further estimate the contributions of the quantum phase of the quantum annealer and the classical post-processing phase typically used to enhance each solution returned by DW. We demonstrate that on random graphs that fit DW, no quantum speedup can be observed compared with the classical algorithms. On the other hand, for instances specifically designed to fit well the DW qubit interconnection network, we observe substantial speed-ups in computing time over classical approaches.« less

Controlling the optical parameters of self-assembled silver films with wetting layers and annealing

NASA Astrophysics Data System (ADS)

Ciesielski, Arkadiusz; Skowronski, Lukasz; Trzcinski, Marek; Szoplik, Tomasz

2017-11-01

We investigated the influence of presence of Ni and Ge wetting layers as well as annealing on the permittivity of Ag films with thicknesses of 20, 35 and 65 nm. Most of the research on thin silver films deals with very small (<20 nm) or relatively large (≥50 nm) thicknesses. We studied the transition region (around 30 nm) from charge percolation pathways to fully continuous films and compared the values of optical parameters among silver layers with at least one fixed attribute (thickness, wetting and capping material, post-process annealing). Our study, based on atomic force microscopy, ellipsometric and X-ray photoelectron spectroscopy measurements, shows that utilizing a wetting layer is comparable to increasing the thickness of the silver film. Both operations decrease the roughness-to-thickness ratio, thus decreasing the scattering losses and both narrow the Lorentz-shaped interband transition peak. However, while increasing silver thickness increases absorption on the free carriers, the use of wetting layers influences the self-assembled internal structure of silver films in such a way, that the free carrier absorption decreases. Wetting layers also introduce additional contributions from effects like segregation or diffusion, which evolve in time and due to annealing.

Finding Maximum Cliques on the D-Wave Quantum Annealer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chapuis, Guillaume; Djidjev, Hristo; Hahn, Georg

This work assesses the performance of the D-Wave 2X (DW) quantum annealer for finding a maximum clique in a graph, one of the most fundamental and important NP-hard problems. Because the size of the largest graphs DW can directly solve is quite small (usually around 45 vertices), we also consider decomposition algorithms intended for larger graphs and analyze their performance. For smaller graphs that fit DW, we provide formulations of the maximum clique problem as a quadratic unconstrained binary optimization (QUBO) problem, which is one of the two input types (together with the Ising model) acceptable by the machine, andmore » compare several quantum implementations to current classical algorithms such as simulated annealing, Gurobi, and third-party clique finding heuristics. We further estimate the contributions of the quantum phase of the quantum annealer and the classical post-processing phase typically used to enhance each solution returned by DW. We demonstrate that on random graphs that fit DW, no quantum speedup can be observed compared with the classical algorithms. On the other hand, for instances specifically designed to fit well the DW qubit interconnection network, we observe substantial speed-ups in computing time over classical approaches.« less

Effect of annealing induced residual stress on the resonance frequency of SiO2 microcantilevers

NASA Astrophysics Data System (ADS)

Balasubramanian, S.; Prabakar, K.; Tripura Sundari, S.

2018-04-01

In the present work, effect of residual stress, induced due to annealing of SiO2 microcantilevers (MCs) on their resonance frequency is studied. SiO2MCs of various dimensions were fabricated using direct laser writer & wet chemical etching method and were annealed at 800 °C in oxygen environment, post release. The residual stress was estimated from the deflection profile of the MCs measured using 3D optical microscope, before and after annealing. Resonance frequency of the MCs was measured using nano-vibration analyzer and was found to change after annealing. Further the frequency shift was found to depend on the MC dimensions. This is attributed to the large stress gradients induced by annealing and associated stiffness changes.

Evolution of Residual Stress and Distortion of Cold-Rolled Bearing Ring from Annealing to Quenched-Tempered Heat Treatment

NASA Astrophysics Data System (ADS)

Lu, Bohan; Lu, Xiaohui

2018-02-01

This study investigates the correlation between the residual stress and distortion behavior of a cold-rolled ring from the annealing to quenching-tempering (QT) process. Due to the cold-rolled process, the external periphery of the bearing ring experiences a compressive residual stress. To relieve the residual stress, cold-rolled rings are annealed at 700 °C which is higher than the starting temperature of recrystallization. When cold-rolled rings are annealed at 700 °C for 15 min, the compressive residual stress is reduced to zero and the outer diameter of the annealed ring becomes larger than that of a non-annealed sample, which is unrelated to annealing time. Simultaneously, the roundness and taper deviation do not obviously change compared with those of non-annealed sample. The stress relaxation during the annealing process was attributed to the recovery and recrystallization of ferrite. Annealing has a genetic influence on the following QT heat treatment, wherein the lowest residual stress is in the non-annealed cold-rolled ring. From the annealing to QT process, the deviation of the outer diameter, roundness, and taper increased with annealing time, a large extend than that of non-annealed samples.

Microstructural Evolution of Dy2O3-TiO2 Powder Mixtures during Ball Milling and Post-Milled Annealing

PubMed Central

Huang, Jinhua; Ran, Guang; Lin, Jianxin; Shen, Qiang; Lei, Penghui; Wang, Xina; Li, Ning

2016-01-01

The microstructural evolution of Dy2O3-TiO2 powder mixtures during ball milling and post-milled annealing was investigated using XRD, SEM, TEM, and DSC. At high ball-milling rotation speeds, the mixtures were fined, homogenized, nanocrystallized, and later completely amorphized, and the transformation of Dy2O3 from the cubic to the monoclinic crystal structure was observed. The amorphous transformation resulted from monoclinic Dy2O3, not from cubic Dy2O3. However, at low ball-milling rotation speeds, the mixtures were only fined and homogenized. An intermediate phase with a similar crystal structure to that of cubic Dy2TiO5 was detected in the amorphous mixtures annealed from 800 to 1000 °C, which was a metastable phase that transformed to orthorhombic Dy2TiO5 when the annealing temperature was above 1050 °C. However, at the same annealing temperatures, pyrochlore Dy2Ti2O7 initially formed and subsequently reacted with the remaining Dy2O3 to form orthorhombic Dy2TiO5 in the homogenous mixtures. The evolutionary mechanism of powder mixtures during ball milling and subsequent annealing was analyzed. PMID:28772375

Microstructure and Texture Evolution in a Yttrium-Containing ZM31 Alloy: Effect of Pre- and Post-deformation Annealing

NASA Astrophysics Data System (ADS)

Tahreen, N.; Zhang, D. F.; Pan, F. S.; Jiang, X. Q.; Li, D. Y.; Chen, D. L.

2016-12-01

Microstructure and texture evolution of as-extruded ZM31 magnesium alloys with different amounts of yttrium (Y) during pre- and post-deformation annealing were examined with special attention given to the effect of Y on recrystallization. It was observed that the extruded ZM31 alloys exhibited a basal texture with the basal planes parallel to the extrusion direction (ED). The compression of the extruded alloys in the ED to a strain amount of 10 pct resulted in c-axes of hcp unit cells rotating toward the anti-compression direction due to the occurrence of extension twinning. Annealing of the extruded alloys altered the microstructure and texture, and the subsequent compression after annealing showed a relatively weak texture and a lower degree of twinning. A reverse procedure of pre-compression and subsequent annealing was found to further weaken the texture with a more scattered distribution of orientations and to lead to the vanishing of the original basal texture. With increasing Y content, both the extent of extension twinning during compression and the fraction of recrystallization during annealing decreased due to the role of Y present in the substitutional solid solution and in the second-phase particles, leading to a significant increase in the compressive yield strength.

Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba,Sr)TiO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, Z. Q.; Podpirka, A.; Kirchoefer, S. W.

2015-05-04

We report on the native defect and microwave properties of 1 μm thick Ba{sub 0.50}Sr{sub 0.50}TiO{sub 3} (BST) films grown on MgO (100) substrates by molecular beam epitaxy (MBE). Depth-resolved cathodoluminescence spectroscopy (DRCLS) showed high densities of native point defects in as-deposited BST films, causing strong subgap emission between 2.0 eV and 3.0 eV due to mixed cation V{sub C} and oxygen Vo vacancies. Post growth air anneals reduce these defects with 2.2, 2.65, and 3.0 eV V{sub O} and 2.4 eV V{sub C} intensities decreasing with increasing anneal temperature and by nearly two orders of magnitude after 950 °C annealing. These low-defect annealed BSTmore » films exhibited high quality microwave properties, including room temperature interdigitated capacitor tunability of 13% under an electric bias of 40 V and tan δ of 0.002 at 10 GHz and 40 V bias. The results provide a feasible route to grow high quality BST films by MBE through post-air annealing guided by DRCLS.« less

Boron depth profiles and residual damage following rapid thermal annealing of low-temperature BSi molecular ion implantation in silicon

NASA Astrophysics Data System (ADS)

Liang, J. H.; Wang, S. C.

2007-08-01

The influence of substrate temperature on both the implantation and post-annealing characteristics of molecular-ion-implanted 5 × 1014 cm-2 77 keV BSi in silicon was investigated in terms of boron depth profiles and damage microstructures. The substrate temperatures under investigation consisted of room temperature (RT) and liquid nitrogen temperature (LT). Post-annealing treatments were performed using rapid thermal annealing (RTA) at 1050 °C for 25 s. Boron depth profiles and damage microstructures in both the as-implanted and as-annealed specimens were determined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), respectively. The as-implanted results revealed that, compared to the RT specimen, the LT specimen yields a shallower boron depth profile with a reduced tail into the bulk. An amorphous layer containing a smooth amorphous-to-crystalline (a/c) interface is evident in the LT specimen while just the opposite is true in the as-implanted RT one. The as-annealed results illustrated that the extension of the boron depth profile into the bulk via transient-enhanced diffusion (TED) in the LT specimen is less than it is in the RT one. Only residual defects are visible in the LT specimen while two clear bands of dislocation loops appear in the RT one.

Advanced processing of gallium nitride and gallium nitride-based devices: Ultra-high temperature annealing and implantation incorporation

NASA Astrophysics Data System (ADS)

Yu, Haijiang

This dissertation is focused on three fields: ultra-high temperature annealing of GaN, activation of implanted GaN and the implantation incorporation into AlGaN/GaN HEMT processing, with an aim to increase the performance, manufacturability and reliability of AlGaN/GaN HEMTs. First, the ultra high temperature (around 1500°C) annealing of MOCVD grown GaN on sapphire has been studied, and a thermally induced threading dislocation (TD) motion and reaction are reported. Using a rapid thermal annealing (RTA) approach capable of heating 2 inch wafers to around 1500°C with 100 bar N2 over-pressure, evidence of dislocation motion was first observed in transmission electron microscopy (TEM) micrographs of both planar and patterned GaN films protected by an AIN capping layer. An associated decrease in x-ray rocking curve (XRC) full-width-half-maximum (FWHM) was also observed for both the symmetric and asymmetric scans. After annealing, the AIN capping layer remained intact, and optical measurements showed no degradation of the opto-electronic properties of the films. Then activation annealing of Si implants in MOCVD grown GaN has been studied for use in ohmic contacts. Si was implanted in semi-insulating GaN at 100 keV with doses from 5 x 1014 cm-2 to 1.5 x 1016 cm-2. Rapid thermal annealing at 1500°C with 100 bar N2 over-pressure was used for dopant activation, resulting in a minimum sheet resistance of 13.9 O/square for a dose of 7 x 1015 cm-2. Secondary ion mass spectroscopy measurements showed a post-activation broadening of the dopant concentration peak by 20 nm (at half the maximum), while X-Ray triple axis o-2theta scans indicated nearly complete implant damage recovery. Transfer length method measurements of the resistance of Ti/Al/Ni/Au contacts to activated GaN:Si (5 x 1015 cm-2 at 100 keV) indicated lowest contact resistances of 0.07 Omm and 0.02 Omm for as-deposited and subsequently annealed contacts, respectively. Finally, the incorporation of Si implantation into AlGaN/GaN high electron mobility transistor processing has been first demonstrated. An ultra-high temperature (1500°C) rapid thermal annealing technique was developed for the activation of Si dopants implanted in the source and drain. In comparison to control devices processed by conventional fabrication, the implanted device with nonalloyed ohmic contact showed comparable device performance with a contact resistance of 0.4 Omm Imax 730 mA/mm ft/f max; 26/62 GHz and power 3.4 W/mm on sapphire. These early results demonstrate the feasibility of implantation incorporation into GaN based device processing as well as the potential to increase yield, reproducibility and reliability in AlGaN/GaN HEMTs.

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

NASA Astrophysics Data System (ADS)

Zheng, Meijuan; Zhang, Guozhen; Wang, Xiao; Wan, Jiaxian; Wu, Hao; Liu, Chang

2017-04-01

GaN-based metal-oxide-semiconductor capacitors with ZrO2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from -4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A minimum leakage current density of 3 × 10-9 A/cm2 at 1 V was obtained when O3 was used for the growth of ZrO2. Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms.

Air-stable, solution-processed oxide p-n heterojunction ultraviolet photodetector.

PubMed

Kim, Do Young; Ryu, Jiho; Manders, Jesse; Lee, Jaewoong; So, Franky

2014-02-12

Air-stable solution processed all-inorganic p-n heterojunction ultraviolet photodetector is fabricated with a high gain (EQE, 25 300%). Solution-processed NiO and ZnO films are used as p-type and n-type ultraviolet sensitizing materials, respectively. The high gain in the detector is due to the interfacial trap-induced charge injection that occurs at the ITO/NiO interface by photogenerated holes trapped in the NiO film. The gain of the detector is controlled by the post-annealing temperature of the solution-processed NiO films, which are studied by X-ray photoelectron spectroscopy (XPS).

Effects of oxygen partial pressure, deposition temperature, and annealing on the optical response of CdS:O thin films as studied by spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Junda, Maxwell M.; Grice, Corey R.; Subedi, Indra; Yan, Yanfa; Podraza, Nikolas J.

2016-07-01

Ex-situ spectroscopic ellipsometry measurements are made on radio frequency magnetron sputtered oxygenated cadmium sulfide (CdS:O) thin films. Films are deposited onto glass substrates at room temperature and at 270 °C with varying oxygen to total gas flow ratios in the sputtering ambient. Ellipsometric spectra from 0.74 to 5.89 eV are collected before and after annealing at 607 °C to simulate the thermal processes during close-space sublimation of overlying cadmium telluride in that solar cell configuration. Complex dielectric function (ɛ = ɛ1 + iɛ2) spectra are extracted for films as a function of oxygen gas flow ratio, deposition temperature, and post-deposition annealing using a parametric model accounting for critical point transitions and an Urbach tail for sub-band gap absorption. The results suggest an inverse relationship between degree of crystallinity and oxygen gas flow ratio, whereas annealing is shown to increase crystallinity in all samples. Direct band gap energies are determined from the parametric modeling of ɛ and linear extrapolations of the square of the absorption coefficient. As-deposited samples feature a range of band gap energies whereas annealing is shown to result in gap energies ranging only from 2.40 to 2.45 eV, which is close to typical band gaps for pure cadmium sulfide.

Effect of post-irradiation annealing on the irradiated microstructure of neutron-irradiated 304L stainless steel

NASA Astrophysics Data System (ADS)

Jiao, Z.; Hesterberg, J.; Was, G. S.

2018-03-01

Post-irradiation annealing was performed on a 304L SS that was irradiated to 5.9 dpa in the Barsebäck 1 BWR reactor. Evolution of dislocation loops, radiation-induced solute clusters and radiation-induced segregation at the grain boundary was investigated following thermal annealing at 500 °C and 550 °C up to 20 h. Dislocation loops, Ni-Si and Al-Cu clusters, and enrichment of Ni, Si and depletion of Cr at the grain boundary were observed in the as-irradiated condition. Dislocation loop size did not change significantly after annealing at 550 °C for 5 h but the loop number density decreased considerably and loops mostly disappeared after annealing at 550 °C for 20 h. The average size of Ni-Si and Al-Cu clusters increased while the number density decreased with annealing. The increase in cluster size was due to diffusion of solutes rather than cluster coarsening. Significant volume fractions of Ni-Si and Al-Cu clusters still remained after annealing at 550 °C for 20 h. Substantial recovery of Cr and Ni at the grain boundary was observed after annealing at 550 °C for 5 h but neither Cr nor Ni was fully recovered after 20 h. Annihilation of dislocation loops, driven by the thermal vacancy concentration gradient caused by the strain field and stacking fault associated with the loops appeared to be faster than annihilation of solute clusters and recovery of Ni and Si at the grain boundary, both of which are driven by the solute concentration gradients.

Effects of cooling rate and stabilization annealing on fatigue behavior of β-processed Ti-6Al-4V alloys

NASA Astrophysics Data System (ADS)

Seo, Wongyu; Jeong, Daeho; Lee, Dongjun; Sung, Hyokyung; Kwon, Yongnam; Kim, Sangshik

2017-07-01

The effects of stabilization annealing and cooling rate on high cycle fatigue (HCF) and fatigue crack propagation (FCP) behaviors of β-processed Ti64 alloys were examined. After β-process heating above β transus, two different cooling rates of air cooling (β-annealing) and water quenching (β-quenching) were utilized. Selected specimens were then underwent stabilization annealing. The tensile tests, HCF and FCP tests on conducted on the β-processed Ti64 specimens with and without stabilization annealing. No notable microstructural and mechanical changes with stabilization annealing was observed for the β-annealed Ti64 alloys. However, significant effect of stabilization annealing was found on the FCP behavior of β-quenched Ti64 alloys, which appeared to be related to the built-up of residual stress after quenching. The mechanical behavior of β-processed Ti64 alloys with and with stabilization annealing was discussed based on the micrographic examination, including crack growth path and crack nucleation site, and fractographic analysis.

Polycrystalline Terfenol-D thin films grown at CMOS compatible temperature

NASA Astrophysics Data System (ADS)

Panduranga, Mohanchandra K.; Lee, Taehwan; Chavez, Andres; Prikhodko, Sergey V.; Carman, Gregory P.

2018-05-01

Terfenol-D thin films have the largest magnetoelastic coefficient at room temperature of any material system and thus are ideal for voltage induced strain multiferroics. However, Terfenol-D requires 500 0C processing temperature which prohibits its use in CMOS devices where processing temperatures must be below 450 0C. In this paper, we describe a deposition process that produces quality Terfenol-D film with processing temperature below 450 0C. These films have extremely smooth surfaces (Ra˜1nm) with excellent magnetoelastic properties (λs=880 microstrain) similar to its bulk polycrystalline counterpart. The films are produced by DC magnetron sputtering and deposited on heated substrates at 250 0C and post annealed at either 250 0C, 400 0C or 450 0C. Among these films only the film annealed at 450 0C produces crystalline Terfenol-D with a face centered cubic crystal structure and saturation magnetization of ˜700 emu/cc. MOKE Magnetic hysteresis loops measured with four point bending fixture show compressive strain dramatically alter the coercive field from 2300 Oe to 1600 Oe.

Effects of post-deposition magnetic field annealing on magnetic properties of NiO/Co90Fe10 bilayers

NASA Astrophysics Data System (ADS)

Zheng, Chao; Su, Shan; Chiu, Chun-Cheng; Skoropata, Elizabeth; Desautels, Ryan D.; van Lierop, Johan; Lin, Ko-Wei; Pong, Philip W. T.

2018-01-01

The ferromagnetic (FM)/antiferromagnetic (AF) bilayer structures have drawn intensive attention because of their wide applications in modern spintronic devices. While abundant published works have been reported on the interface effects of the FM/AF bilayers caused by the magnetic field annealing (MFA) process, the volume effects caused by the MFA treatment have been rarely considered. In this work, the microstructural and magnetic properties of the NiO/CoFe bilayers with various CoFe thicknesses were investigated under different annealing temperatures. At high annealing temperature, the interlayer mixing and exchange coupling between NiO and CoFe layers were promoted and consequently the interface effects were facilitated. The interfacial oxides acted as pinning centers and randomly pinned the FM domains, leading to an increase of coercivity and a considerable degradation of uniaxial anisotropy. The increase of coercivity was also contributed by the enhancement of the interfacial exchange coupling between the NiO and CoFe layers after MFA. As the CoFe thickness increased, the volume effects tended to dominate over the interface effects, resulting in the preservation the uniaxially anisotropic features of CoFe. These results indicate that both the coercivity and anisotropic features of the NiO/CoFe bilayers can be directly affected by the MFA process, opening up the possibility of modifying the magnetism in the NiO/CoFe bilayers and offering an effective way to improve the performance of modern spintronic devices.

Carbon- and oxygen-free Cu(InGa)(SSe)₂ solar cell with a 4.63% conversion efficiency by electrostatic spray deposition.

PubMed

Yoon, Hyun; Na, Seung Heon; Choi, Jae Young; Kim, Min Woo; Kim, Hayong; An, Hee Sang; Min, Byoung Koun; Ahn, SeJin; Yun, Jae Ho; Gwak, Jihye; Yoon, KyungHoon; Kolekar, Sanjay S; van Hest, Maikel F A M; Al-Deyab, Salem S; Swihart, Mark T; Yoon, Sam S

2014-06-11

We have demonstrated the first example of carbon- and oxygen-free Cu(In,Ga)(SSe)2 (CIGSSe) absorber layers prepared by electrospraying a CuInGa (CIG) precursor followed by annealing, sulfurization, and selenization at elevated temperature. X-ray diffraction and scanning electron microscopy showed that the amorphous as-deposited (CIG) precursor film was converted into polycrystalline CIGSSe with a flat-grained morphology after post-treatment. The optimal post-treatment temperature was 300 °C for annealing and 500 °C for both sulfurization and selenization, with a ramp rate of 5 °C/min. The carbon impurities in the precursor film were removed by air annealing, and oxide that was formed during annealing was removed by sulfurization. The fabricated CIGSSe solar cell showed a conversion efficiency of 4.63% for a 0.44 cm(2) area, with Voc = 0.4 V, Jsc = 21 mA/cm(2), and FF = 0.53.

Surface faceting and elemental diffusion behaviour at atomic scale for alloy nanoparticles during in situ annealing

PubMed Central

Chi, Miaofang; Wang, Chao; Lei, Yinkai; Wang, Guofeng; Li, Dongguo; More, Karren L.; Lupini, Andrew; Allard, Lawrence F.; Markovic, Nenad M.; Stamenkovic, Vojislav R.

2015-01-01

The catalytic performance of nanoparticles is primarily determined by the precise nature of the surface and near-surface atomic configurations, which can be tailored by post-synthesis annealing effectively and straightforwardly. Understanding the complete dynamic response of surface structure and chemistry to thermal treatments at the atomic scale is imperative for the rational design of catalyst nanoparticles. Here, by tracking the same individual Pt3Co nanoparticles during in situ annealing in a scanning transmission electron microscope, we directly discern five distinct stages of surface elemental rearrangements in Pt3Co nanoparticles at the atomic scale: initial random (alloy) elemental distribution; surface platinum-skin-layer formation; nucleation of structurally ordered domains; ordered framework development and, finally, initiation of amorphization. Furthermore, a comprehensive interplay among phase evolution, surface faceting and elemental inter-diffusion is revealed, and supported by atomistic simulations. This work may pave the way towards designing catalysts through post-synthesis annealing for optimized catalytic performance. PMID:26576477

Surface faceting and elemental diffusion behaviour at atomic scale for alloy nanoparticles during in situ annealing

DOE PAGES

Chi, Miaofang; Wang, Chao; Lei, Yinkai; ...

2015-11-18

The catalytic performance of nanoparticles is primarily determined by the precise nature of the surface and near-surface atomic configurations, which can be tailored by post-synthesis annealing effectively and straightforwardly. Understanding the complete dynamic response of surface structure and chemistry to thermal treatments at the atomic scale is imperative for the rational design of catalyst nanoparticles. Here, by tracking the same individual Pt 3Co nanoparticles during in situ annealing in a scanning transmission electron microscope, we directly discern five distinct stages of surface elemental rearrangements in Pt 3Co nanoparticles at the atomic scale: initial random (alloy) elemental distribution; surface platinum-skin-layer formation;more » nucleation of structurally ordered domains; ordered framework development and, finally, initiation of amorphization. Furthermore, a comprehensive interplay among phase evolution, surface faceting and elemental inter-diffusion is revealed, and supported by atomistic simulations. In conlcusion, this work may pave the way towards designing catalysts through post-synthesis annealing for optimized catalytic performance.« less

Crystallization behavior of amorphous indium-gallium-zinc-oxide films and its effects on thin-film transistor performance

NASA Astrophysics Data System (ADS)

Suko, Ayaka; Jia, JunJun; Nakamura, Shin-ichi; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki; Shigesato, Yuzo

2016-03-01

Amorphous indium-gallium-zinc oxide (a-IGZO) films were deposited by DC magnetron sputtering and post-annealed in air at 300-1000 °C for 1 h to investigate the crystallization behavior in detail. X-ray diffraction, electron beam diffraction, and high-resolution electron microscopy revealed that the IGZO films showed an amorphous structure after post-annealing at 300 °C. At 600 °C, the films started to crystallize from the surface with c-axis preferred orientation. At 700-1000 °C, the films totally crystallized into polycrystalline structures, wherein the grains showed c-axis preferred orientation close to the surface and random orientation inside the films. The current-gate voltage (Id-Vg) characteristics of the IGZO thin-film transistor (TFT) showed that the threshold voltage (Vth) and subthreshold swing decreased markedly after the post-annealing at 300 °C. The TFT using the totally crystallized films also showed the decrease in Vth, whereas the field-effect mobility decreased considerably.

A Novel Approach to Enhance the Mechanical Strength and Electrical and Thermal Conductivity of Cu-GNP Nanocomposites

NASA Astrophysics Data System (ADS)

Saboori, Abdollah; Pavese, Matteo; Badini, Claudio; Fino, Paolo

2018-01-01

Copper/graphene nanoplatelet (GNP) nanocomposites were produced by a wet mixing method followed by a classical powder metallurgy technique. A qualitative evaluation of the structure of graphene after mixing indicated that wet mixing is an appropriate dispersion method. Thereafter, the effects of two post-processing techniques such as repressing-annealing and hot isostatic pressing (HIP) on density, interfacial bonding, hardness, and thermal and electrical conductivity of the nanocomposites were analyzed. Density evaluations showed that the relative density of specimens increased after the post-processing steps so that after HIPing almost full densification was achieved. The Vickers hardness of specimens increased considerably after the post-processing techniques. The thermal conductivity of pure copper was very low in the case of the as-sintered samples containing 2 to 3 pct porosity and increased considerably to a maximum value in the case of HIPed samples which contained only 0.1 to 0.2 pct porosity. Electrical conductivity measurements showed that by increasing the graphene content electrical conductivity decreased.

Theoretical optimization of multi-layer InAs/GaAs quantum dots subject to post-growth thermal annealing for tailoring the photoluminescence emission beyond 1.3 μm

NASA Astrophysics Data System (ADS)

Ghosh, K.; Naresh, Y.; Srichakradhar Reddy, N.

2012-07-01

In this paper, we present theoretical analysis and computation for tuning the ground state (GS) photoluminescence (PL) emission of InAs/GaAs quantum dots (QDs) at telecommunication window of 1.3-1.55 μm by optimizing its height and base dimensions through quantum mechanical concepts. For this purpose, numerical modelling is carried out to calculate the quantized energy states of finite dimensional QDs so as to obtain the GS PL emission at or beyond 1.3 μm. Here, we also explored strain field altering the QD size distribution in multilayer heterostructure along with the changes in the PL spectra, simulation on post growth thermal annealing process which blueshifts the operating wavelength away from the vicinity of 1.3 μm and improvement of optical properties by varying the thickness of GaAs spacing. The results are discussed in detail which will serve as an important information tool for device scientist fabricating high quality semiconductor quantum structures with reduced defects at telecommunication wavelengths.

Advantages of a Special Post-Growth THM Program for the Reduction of Inclusions in CdTe Crystals

NASA Astrophysics Data System (ADS)

Fochuk, P.; Zakharuk, Z.; Nykonyuk, Ye.; Rarenko, A.; Kolesnik, M.; Bolotnikov, A. E.; Yang, G.; James, R. B.

2016-06-01

CdTe crystals are used widely for manufacturing gamma-ray radiation sensors, and we can improve their properties if we eliminate as many as possible of their Te inclusions. In this paper, we describe our two modes of removing them; first, we used the traveling heater method for growing them, and then we applied post-growth cooling, for which we used a special slow-cooling program. Here, we placed the CdTe ingot, containing inclusions, into a quartz container, and moved a narrow heater zone along it. The molten inclusions moved together with the hot zone, and, at end of the process, they were concentrated heavily at the ingot's surface. Consequently, very few inclusions were observed in much of the CdTe ingot. Hall effect measurements showed that after such annealing the value of the carrier mobility was increased significantly, and the concentration of ionized centers was reduced. One major advantage of this treatment, compared to thermal annealing alone, is that both the inclusions and impurities are eliminated simultaneously.

Low-temperature post-deposition annealing investigation for 3D charge trap flash memory by Kelvin probe force microscopy

NASA Astrophysics Data System (ADS)

Huo, Zongliang; Jin, Lei; Han, Yulong; Li, Xinkai; Ye, Tianchun; Liu, Ming

2015-01-01

The influence of post-deposition annealing (PDA) temperature condition on charge distribution behavior of HfO2 thin films was systematically investigated by various-temperature Kelvin probe force microscopy technology. Contact potential difference profiles demonstrated that charge storage capability shrinks with decreasing annealing temperature from 1,000 to 500 °C and lower. Compared to 1,000 °C PDA, it was found that 500 °C PDA causes deeper effective trap energy level, suppresses lateral charge spreading, and improves the retention characteristics. It is concluded that low-temperature PDA can be adopted in 3D HfO2-based charge trap flash memory to improve the thermal treatment compatibility of the bottom peripheral logic and upper memory arrays.

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers.

PubMed

Zheng, Meijuan; Zhang, Guozhen; Wang, Xiao; Wan, Jiaxian; Wu, Hao; Liu, Chang

2017-12-01

GaN-based metal-oxide-semiconductor capacitors with ZrO 2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from -4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A minimum leakage current density of 3 × 10 -9  A/cm 2 at 1 V was obtained when O 3 was used for the growth of ZrO 2 . Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms.

Effect of post-annealing on the magnetic properties of sputtered Mn56Al44 thin films

NASA Astrophysics Data System (ADS)

Gupta, Nanhe Kumar; Husain, Sajid; Barwal, Vineet; Behera, Nilamani; Chaudhary, Sujeet

2018-05-01

Mn56Al44 (MnAl) thin films of constant thickness (˜30nm) were grown on naturally oxidized Si substrates using DC-magnetron sputtering. Effect of deposition parameters such as sputtering power, substrate temperature (Ts), and post-annealing temperature have been systematically invstigated. X-ray diffraction patterns revealed the presence of mixed phases, namely the τ- and β-MnAl. The highest saturation magnetization (MS) was found to be 65emu/cc using PPMS-VSM in film grown at Ts=500°C. The magnetic ordering was found to get significantly improved by performing post-annealing of these as-grwon at 400°C for 1 hr in the presence of out-of-plane magnetic field of ˜1500Oe in vacuum. In particular, at room temperature (RT), the MS got enhanced after magnetic annealing from 65emu/cc to 500 emu/cc in MnAl films grown at Ts=500°C. This sample exhibited a magneto-resistance of ˜1.5% at RT. The tuning of the structural and magnetic properties of MnAl binary alloy thin films as established here by varying the growth parameters is critical with regards to the prospective applications of MnAl, a metastable ferromagnetic system which possesses the highest perpendicular magnetic anisotropy at RT till date.

Effect of thermal annealing on the redistribution of alkali metals in Cu(In,Ga)Se2 solar cells on glass substrate

NASA Astrophysics Data System (ADS)

Kamikawa, Yukiko; Nishinaga, Jiro; Ishizuka, Shogo; Tayagaki, Takeshi; Guthrey, Harvey; Shibata, Hajime; Matsubara, Koji; Niki, Shigeru

2018-03-01

The precise control of alkali-metal concentrations in Cu(In,Ga)Se2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance from the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.

Properties of NiO thin films deposited by chemical spray pyrolysis using different precursor solutions

NASA Astrophysics Data System (ADS)

Cattin, L.; Reguig, B. A.; Khelil, A.; Morsli, M.; Benchouk, K.; Bernède, J. C.

2008-07-01

NiO thin films have been deposited by chemical spray pyrolysis using a perfume atomizer to grow the aerosol. The influence of the precursor, nickel chloride hexahydrate (NiCl 2·6H 2O), nickel nitrate hexahydrate (Ni(NO 3) 2·6H 2O), nickel hydroxide hexahydrate (Ni(OH) 2·6H 2O), nickel sulfate tetrahydrate (NiSO 4·4H 2O), on the thin films properties has been studied. In the experimental conditions used (substrate temperature 350 °C, precursor concentration 0.2-0.3 M, etc.), pure NiO thin films crystallized in the cubic phase can be achieved only with NiCl 2 and Ni(NO 3) 2 precursors. These films have been post-annealed at 425 °C for 3 h either in room atmosphere or under vacuum. If all the films are p-type, it is shown that the NiO films conductivity and optical transmittance depend on annealing process. The properties of the NiO thin films annealed under room atmosphere are not significantly modified, which is attributed to the fact that the temperature and the environment of this annealing is not very different from the experimental conditions during spray deposition. The annealing under vacuum is more efficient. This annealing being proceeded in a vacuum no better than 10 -2 Pa, it is supposed that the modifications of the NiO thin film properties, mainly the conductivity and optical transmission, are related to some interaction between residual oxygen and the films.

Annealing effects on electron-beam evaporated Al 2O 3 films

NASA Astrophysics Data System (ADS)

Shuzhen, Shang; Lei, Chen; Haihong, Hou; Kui, Yi; Zhengxiu, Fan; Jianda, Shao

2005-04-01

The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 °C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 °C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given.

Deformation and annealing response of TD-nickel chromium

NASA Technical Reports Server (NTRS)

Kane, R. D.; Ebert, L. J.

1975-01-01

The recrystallization and grain growth processes occurring in TD-NiCr were examined with respect to deformation severity, annealing time, and temperature. Results indicated that two different annealing responses of TD-NiCr are possible, depending on the initial state and processing history prior to annealing. As-received sheet showed a dramatic increase in grain size with decreasing annealing temperature, whereas sheet prior-annealed at 1316 C for 1 hr exhibited very little variation with subsequent annealing temperature.

Improvement of multi-level resistive switching characteristics in solution-processed AlO x -based non-volatile resistive memory using microwave irradiation

NASA Astrophysics Data System (ADS)

Kim, Seung-Tae; Cho, Won-Ju

2018-01-01

We fabricated a resistive random access memory (ReRAM) device on a Ti/AlO x /Pt structure with solution-processed AlO x switching layer using microwave irradiation (MWI), and demonstrated multi-level cell (MLC) operation. To investigate the effect of MWI power on the MLC characteristics, post-deposition annealing was performed at 600-3000 W after AlO x switching layer deposition, and the MLC operation was compared with as-deposited (as-dep) and conventional thermally annealing (CTA) treated devices. All solution-processed AlO x -based ReRAM devices exhibited bipolar resistive switching (BRS) behavior. We found that these devices have four-resistance states (2 bits) of MLC operation according to the modulation of the high-resistance state (HRSs) through reset voltage control. Particularly, compared to the as-dep and CTA ReRAM devices, the MWI-treated ReRAM devices showed a significant increase in the memory window and stable endurance for multi-level operation. Moreover, as the MWI power increased, excellent MLC characteristics were exhibited because the resistance ratio between each resistance state was increased. In addition, it exhibited reliable retention characteristics without deterioration at 25 °C and 85 °C for 10 000 s. Finally, the relationship between the chemical characteristics of the solution-processed AlO x switching layer and BRS-based multi-level operation according to the annealing method and MWI power was investigated using x-ray photoelectron spectroscopy.

Use of inverse quasi-epitaxy to modify order during post-deposition processing of organic photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Forrest, Stephen R.; Zimmerman, Jeramy D.; Lassiter, Brian E .

Disclosed herein are methods for fabricating an organic photovoltaic device comprising depositing an amorphous organic layer and a crystalline organic layer over a first electrode, wherein the amorphous organic layer and the crystalline organic layer contact one another at an interface; annealing the amorphous organic layer and the crystalline organic layer for a time sufficient to induce at least partial crystallinity in the amorphous organic layer; and depositing a second electrode over the amorphous organic layer and the crystalline organic layer. In the methods and devices herein, the amorphous organic layer may comprise at least one material that undergoes inverse-quasimore » epitaxial (IQE) alignment to a material of the crystalline organic layer as a result of the annealing.« less

Damage mechanisms of MoN/SiN multilayer optics for next-generation pulsed XUV light sources.

PubMed

Sobierajski, R; Bruijn, S; Khorsand, A R; Louis, E; van de Kruijs, R W E; Burian, T; Chalupsky, J; Cihelka, J; Gleeson, A; Grzonka, J; Gullikson, E M; Hajkova, V; Hau-Riege, S; Juha, L; Jurek, M; Klinger, D; Krzywinski, J; London, R; Pelka, J B; Płociński, T; Rasiński, M; Tiedtke, K; Toleikis, S; Vysin, L; Wabnitz, H; Bijkerk, F

2011-01-03

We investigated the damage mechanism of MoN/SiN multilayer XUV optics under two extreme conditions: thermal annealing and irradiation with single shot intense XUV pulses from the free-electron laser facility in Hamburg - FLASH. The damage was studied "post-mortem" by means of X-ray diffraction, interference-polarizing optical microscopy, atomic force microscopy, and scanning transmission electron microscopy. Although the timescale of the damage processes and the damage threshold temperatures were different (in the case of annealing it was the dissociation temperature of Mo2N and in the case of XUV irradiation it was the melting temperature of MoN) the main damage mechanism is very similar: molecular dissociation and the formation of N2, leading to bubbles inside the multilayer structure.

Synthesis Of Noble Metal Nanoparticle Composite Glasses Using Low Energy Ion Beam Mixing

NASA Astrophysics Data System (ADS)

Varma, Ranjana S.; Kothari, D. C.; Mahadkar, A. G.; Kulkarni, N. A.; Kanjilal, D.; Kumar, P.

2010-12-01

Carbon coated thin films of Cu or Au on fused silica glasses have been irradiated using 100 keV Ar+ ions at different fluences ranging from 1×1013 to 1×1016 ion/cm2. In this article, we explore a route to form noble metal nanoparticles in amorphous glass matrices without post irradiation annealing using low energy ion beam mixing where nuclear energy loss process is dominant. Optical and structural properties were studied using UV-Vis-NIR absorbance spectroscopy and Glancing angle X-ray Diffraction (GXRD). Results showed that Cu and Au nanoparticles are formed at higher fluence of 1×1016 ion/cm2 used in this work without annealing. The diameters of metal nanoparticles obtained from UV-Vis NIR and GXRD are in agreement.

Thermal Spraying of CuAlFe Powder on Cu5Sn Alloy

NASA Astrophysics Data System (ADS)

Roata, I. C.; Pascu, A.; Croitoru, C.; Stanciu, E. M.; Pop, M. A.

2017-06-01

To improve the corrosion and wear resistance of copper and its alloys, flame spraying has been employed to obtain a relatively homogenous Cu/Al/Fe-based coating. To minimize the defects that usually occur by using this method, a post-coating annealing step has been employed, by using concentrated solar energy as means of thermal surface treatment. Scanning electron micrographs have indicated a reduction in the cracks/pores density and accelerated corrosion testing have indicated a higher performance of the solar-annealed sample, in comparison with the initial reference material. The coating approach mentioned in this paper could be successfully applied to restore several worn tools and instruments, and could also be of use in the renewable energy field (IR-absorbent coatings) or in advanced oxidation processes, such as photocatalysis.

Structural, mechanical and in vitro characterization of individually structured Ti-6Al-4V produced by direct laser forming.

PubMed

Hollander, Dirk A; von Walter, Matthias; Wirtz, Tobias; Sellei, Richard; Schmidt-Rohlfing, Bernhard; Paar, Othmar; Erli, Hans-Josef

2006-03-01

Direct laser forming (DLF) is a rapid prototyping technique which enables prompt modelling of metal parts with high bulk density on the base of individual three-dimensional data, including computer tomography models of anatomical structures. In our project, we tested DLF-produced material on the basis of the titanium alloy Ti-6Al-4V for its applicability as hard tissue biomaterial. To this end, we investigated mechanical and structural properties of DLF-Ti-6Al-4V. While the tensile and yield strengths of untreated DLF alloy ranged beyond 1000 MPa, a breaking elongation of 6.5+/-0.6% was determined for this material. After an additional post-DLF annealing treatment, this parameter was increased two-fold to 13.0+/-0.6%, while tensile and yield strengths were reduced by approx. 8%. A Young's modulus of 118.000+/-2.300 MPa was determined for post-DLF annealed Ti-6Al-4V. All data gained from tensile testing of post-DLF annealed Ti-6Al-4V matched American Society of Testing and Materials (ASTM) specifications for the usage of this alloy as medical material. Rotating bending tests revealed that the fatigue profile of post-DLF annealed Ti-6Al-4V was comparable to casted/hot isostatic pressed alloy. We characterized the structure of non-finished DLF-Ti-6Al-4V by scanning electron microscopy and observed a surface-associated layer of particles, which was removable by sandblasting as a finishing step. We manufactured porous specimens with nominal pore diameters of 500, 700 and 1000 microm. The diameters were reduced by the used DLF processing by approx. 300 microm. In an in vitro investigation, we cultured human osteoblasts on non-porous and porous blasted DLF-Ti-6Al-4V specimens to study morphology, vitality, proliferation and differentiation of the cells. The cells spreaded and proliferated on DLF-Ti-6Al-4V over a culture time of 14 days. On porous specimens, osteoblasts grew along the rims of the pores and formed circle-shaped structures, as visualized by live/dead staining as well as scanning electron microscopy. Overall, the DLF-Ti-6Al-4V approach proved to be efficient and could be further advanced in the field of hard tissue biomaterials.

Correlation of lattice defects and thermal processing in the crystallization of titania nanotube arrays

NASA Astrophysics Data System (ADS)

Hosseinpour, Pegah M.; Yung, Daniel; Panaitescu, Eugen; Heiman, Don; Menon, Latika; Budil, David; Lewis, Laura H.

2014-12-01

Titania nanotubes have the potential to be employed in a wide range of energy-related applications such as solar energy-harvesting devices and hydrogen production. As the functionality of titania nanostructures is critically affected by their morphology and crystallinity, it is necessary to understand and control these factors in order to engineer useful materials for green applications. In this study, electrochemically-synthesized titania nanotube arrays were thermally processed in inert and reducing environments to isolate the role of post-synthesis processing conditions on the crystallization behavior, electronic structure and morphology development in titania nanotubes, correlated with the nanotube functionality. Structural and calorimetric studies revealed that as-synthesized amorphous nanotubes crystallize to form the anatase structure in a three-stage process that is facilitated by the creation of structural defects. It is concluded that processing in a reducing gas atmosphere versus in an inert environment provides a larger unit cell volume and a higher concentration of Ti3+ associated with oxygen vacancies, thereby reducing the activation energy of crystallization. Further, post-synthesis annealing in either reducing or inert atmospheres produces pronounced morphological changes, confirming that the nanotube arrays thermally transform into a porous morphology consisting of a fragmented tubular architecture surrounded by a network of connected nanoparticles. This study links explicit data concerning morphology, crystallization and defects, and shows that the annealing gas environment determines the details of the crystal structure, the electronic structure and the morphology of titania nanotubes. These factors, in turn, impact the charge transport and consequently the functionality of these nanotubes as photocatalysts.

Observation of glassy state relaxation during annealing of frozen sugar solutions by X-ray computed tomography.

PubMed

Nakagawa, Kyuya; Tamiya, Shinri; Do, Gabsoo; Kono, Shinji; Ochiai, Takaaki

2018-06-01

Glassy phase formation in a frozen product determines various properties of the freeze-dried products. When an aqueous solution is subjected to freezing, a glassy phase forms as a consequence of freeze-concentration. During post-freezing annealing, the relaxation of the glassy phase and the ripening of ice crystals (i.e. Ostwald ripening) spontaneously occur, where the kinetics are controlled by the annealing and glass transition temperatures. This study was motivated to observe the progress of glassy state relaxation separate from ice coarsening during annealing. X-ray computed tomography (CT) was used to observe a frozen and post-freezing annealed solutions by using monochromatized X-ray from the synchrotron radiation. CT images were successfully obtained, and the frozen matrix were analyzed based on the gray level values that were equivalent to the linear X-ray attenuation coefficients of the observed matters. The CT images obtained from rapidly frozen sucrose and dextrin solutions with different concentrations gave clear linear relationships between the linear X-ray attenuation coefficients values and the solute concentrations. It was confirmed that the glassy state relaxation progressed as increasing annealing time, and this trend was larger in the order of the glass transition temperature of the maximally freeze-concentrated phase. The sucrose-water system required nearly 20 h of annealing time at -5 °C for the completion of the glassy phase relaxation, whereas dextrin-water systems required much longer periods because of their higher glass transition temperatures. The trends of ice coarsening, however, did not perfectly correspond to the trends of the relaxation, suggesting that the glassy phase relaxation and Ostwald ripening would jointly control the ice crystal growth/ripening kinetics, and the dominant mechanism differed by the annealing stage. Copyright © 2018 Elsevier B.V. All rights reserved.

Low-Temperature-Annealed Reduced Graphene Oxide-Polyaniline Nanocomposites for Supercapacitor Applications

NASA Astrophysics Data System (ADS)

Liao, Chen-Yu; Chien, Hung-Hua; Hao, Yu-Chuan; Chen, Chieh-Wen; Yu, Ing-Song; Chen, Jian-Zhang

2018-04-01

Screen-printed reduced graphene oxide (rGO)-polyaniline (PANI) nanocomposites with/without post-annealing were used as the electrode of a supercapacitor with a polyvinyl alcohol/H2SO4 quasi-solid-state gel electrolyte. Annealing can remove part of the ineffective organic binders and thus enhance the supercapacitive performance. However, too high an annealing temperature may damage PANI, thus reducing the pseudocapacitance. Annealing at 100°C for 10 min results in the best achieved areal capacitance of 102.73 mF/cm2, as evaluated by cyclic voltammetry (CV) under a potential scan rate of 2 mV/s. The capacitance retention rate is 88% after 1000 CV cycles under bending with a bending radius of 0.55 cm.

Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

DOE PAGES

Shi, Jianwei; Boccard, Mathieu; Holman, Zachary

2016-07-19

The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300°C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline siliconwafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450°C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450°C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltagemore » of over 710 mV and an efficiency of over 19%.« less

Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Jianwei; Boccard, Mathieu; Holman, Zachary

The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300°C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline siliconwafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450°C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450°C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltagemore » of over 710 mV and an efficiency of over 19%.« less

Pressurized Anneal of Consolidated Powders

NASA Technical Reports Server (NTRS)

Nemir, David Charles (Inventor); Rubio, Edward S. (Inventor); Beck, Jan Bastian (Inventor)

2017-01-01

Systems and methods for producing a dense, well bonded solid material from a powder may include consolidating the powder utilizing any suitable consolidation method, such as explosive shockwave consolidation. The systems and methods may also include a post-processing thermal treatment that exploits a mismatch between the coefficients of thermal expansion between the consolidated material and the container. Due to the mismatch in the coefficients, internal pressure on the consolidated material during the heat treatment may be increased.

Modification and Utilization of Nanoporous Gold for Loading and Release of Drugs

NASA Astrophysics Data System (ADS)

Al-badri, Ibtisam

Nanoporous gold (np-Au) is a sponge-like structure of gold, which can be created by removing the less noble element from the precursor alloy, most typically silver or copper, using different chemical or electrochemical methods. It consists of interconnected ligaments and gaps between the ligaments, whose width can range from a few nanometers to a few hundreds of nanometers, creating a high surface area-to-volume ratio. Due to its many important properties (e.g., conductivity, high surface area-to-volume ratio, plasmonic response, biocompatibility, chemically inertness, and physically robustness), np-Au is suitable for different types of applications, including as a transducer for biosensors, in catalysis, for biomolecule separation, as a substrate for enzyme immobilization, and in drug delivery. The widths of the ligaments and gaps of np-Au can be easily tuned by varying conditions during the pre- or post-production process, for example, time kept in an acid bath and post-annealing (e.g. thermal, chemical, and electrochemical), depending on the requirement of the study. Thermal annealing is a commonly used process for tuning the ligaments and pore size of np-Au. However, the effects of thermal annealing on modification of ligaments and gaps sizes are not completely understood and more research needs to be done. Herein, we have explored the effect of annealing time and thickness of the np-Au sample on modification of ligaments and gaps. Furthermore, we used the electroless plating method to cover the pores or gaps partially on the surface without modifying the interior of np-Au. As-prepared np-Au was then studied as a platform for molecular loading and releasing kinetics for the possible use in drug delivery. We have found that simply applying the electroless deposition for 1 to 5 min can drastically decrease the rate of release of the molecules, and flow cell-based loading is the preferred way to load the molecules inside np-Au compared to the static method. The structure of the np-Au monoliths before and after the modification was characterized using Energy-Dispersive X-ray Spectroscopy (EDS) and scanning electron microscopy (SEM), whereas the molecular loading and releasing studies were performed using UV-Vis spectrophotometer.

Stress-anneal-induced magnetic anisotropy in highly textured Fe-Ga and Fe-Al magnetostrictive strips for bending-mode vibrational energy harvesters

NASA Astrophysics Data System (ADS)

Park, Jung Jin; Na, Suok-Min; Raghunath, Ganesh; Flatau, Alison B.

2016-05-01

Magnetostrictive Fe-Ga and Fe-Al alloys are promising materials for use in bending-mode vibrational energy harvesters. For this study, 50.8 mm × 5.0 mm × 0.5 mm strips of Fe-Ga and Fe-Al were cut from 0.50-mm thick rolled sheet. An atmospheric anneal was used to develop a Goss texture through an abnormal grain growth process. The anneal lead to large (011) grains that covered over 90% of sample surface area. The resulting highly-textured Fe-Ga and Fe-Al strips exhibited saturation magnetostriction values (λsat = λ∥ - λ⊥) of ˜280 ppm and ˜130 ppm, respectively. To maximize 90° rotation of magnetic moments during bending of the strips, we employed compressive stress annealing (SA). Samples were heated to 500°C, and a 100-150 MPa compressive stress was applied while at 500°C for 30 minutes and while being cooled. The effectiveness of the SA on magnetic moment rotation was inferred by comparing post-SA magnetostriction with the maximum possible yield of rotated magnetic moments, which is achieved when λ∥ = λsat and λ⊥ = 0. The uniformity of the SA along the sample length and the impact of the SA on sensing/energy harvesting performance were then assessed by comparing pre- and post-SA bending-stress-induced changes in magnetization at five different locations along the samples. The SA process with a 150 MPa compressive load improved Fe-Ga actuation along the sample length from 170 to 225 ppm (from ˜60% to within ˜80% of λsat). The corresponding sensing/energy harvesting performance improved by as much as a factor of eight in the best sample, however the improvement was not at all uniform along the sample length. The SA process with a 100 MPa compressive load improved Fe-Al actuation along the sample length from 60 to 73 ppm (from ˜46% to ˜56% of λsat, indicating only a marginally effective SA and suggesting the need for modification of the SA protocol. In spite of this, the SA was effective at improving the sensing/energy harvesting performance by a factor of ˜2.5 in the best sample. As with the Fe-Ga strip, improvement in performance was quite varied along the strip length.

Parent-Body Modification of Chondritic Meteorites

NASA Technical Reports Server (NTRS)

Rubin, Alan

2003-01-01

This proposal focused on the parent-body modification of chondritic materials and substantial progress was made in the last year. A summary of the work accomplished during this period is discussed. The topics include: 1) Chromite-Plagioclase Assemblages in Ordinary Chondrites; 2) The Gujba Bencubbin-like meteorite fall; 3) NWA428: A rock that Experienced Impact-induced Annealing; 4) Spade: An Annealed H-chondrite Impact-melt Breccia; and 5) Post-shock Annealing in Ordinary Chondrites. A list of the papers submitted or published during the period is also presented.

Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity

PubMed Central

Zhang, Yiyu; Qian, Ling-Xuan; Wu, Zehan; Liu, Xingzhao

2017-01-01

Recently, amorphous InGaZnO ultraviolet photo thin-film transistors have exhibited great potential for application in future display technologies. Nevertheless, the transmittance of amorphous InGaZnO (~80%) is still not high enough, resulting in the relatively large sacrifice of aperture ratio for each sensor pixel. In this work, the ultraviolet photo thin-film transistor based on amorphous InGaMgO, which processes a larger bandgap and higher transmission compared to amorphous InGaZnO, was proposed and investigated. Furthermore, the effects of post-deposition annealing in oxygen on both the material and ultraviolet detection characteristics of amorphous InGaMgO were also comprehensively studied. It was found that oxygen post-deposition annealing can effectively reduce oxygen vacancies, leading to an optimized device performance, including lower dark current, higher sensitivity, and larger responsivity. We attributed it to the combined effect of the reduction in donor states and recombination centers, both of which are related to oxygen vacancies. As a result, the 240-min annealed device exhibited the lowest dark current of 1.7 × 10−10 A, the highest photosensitivity of 3.9 × 106, and the largest responsivity of 1.5 × 104 A/W. Therefore, our findings have revealed that amorphous InGaMgO photo thin-film transistors are a very promising alternative for UV detection, especially for application in touch-free interactive displays. PMID:28772529

Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity.

PubMed

Zhang, Yiyu; Qian, Ling-Xuan; Wu, Zehan; Liu, Xingzhao

2017-02-13

Recently, amorphous InGaZnO ultraviolet photo thin-film transistors have exhibited great potential for application in future display technologies. Nevertheless, the transmittance of amorphous InGaZnO (~80%) is still not high enough, resulting in the relatively large sacrifice of aperture ratio for each sensor pixel. In this work, the ultraviolet photo thin-film transistor based on amorphous InGaMgO, which processes a larger bandgap and higher transmission compared to amorphous InGaZnO, was proposed and investigated. Furthermore, the effects of post-deposition annealing in oxygen on both the material and ultraviolet detection characteristics of amorphous InGaMgO were also comprehensively studied. It was found that oxygen post-deposition annealing can effectively reduce oxygen vacancies, leading to an optimized device performance, including lower dark current, higher sensitivity, and larger responsivity. We attributed it to the combined effect of the reduction in donor states and recombination centers, both of which are related to oxygen vacancies. As a result, the 240-min annealed device exhibited the lowest dark current of 1.7 × 10 -10 A, the highest photosensitivity of 3.9 × 10⁶, and the largest responsivity of 1.5 × 10⁴ A/W. Therefore, our findings have revealed that amorphous InGaMgO photo thin-film transistors are a very promising alternative for UV detection, especially for application in touch-free interactive displays.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajachidambaram, Jaana Saranya; Sanghavi, Shail P.; Nachimuthu, Ponnusamy

Amorphous zinc tin oxide (ZTO) was investigated to determine the effect of deposition and post annealing conditions on film structure, composition, surface contamination, and thin film transistor (TFT) device performance. X-ray diffraction results indicated that the ZTO films remain amorphous even after annealing to 600 °C. We found that the bulk Zn:Sn ratio of the sputter deposited films were slightly tin rich compared to the composition of the ceramic sputter target, and there was a significant depletion of zinc at the surface. X-ray photoelectron spectroscopy also indicated that residual surface contamination depended strongly on the sample post-annealing conditions where water,more » carbonate and hydroxyl species were absorbed to the surface. Electrical characterization of ZTO films, using TFT test structures, indicated that mobilities as high as 17 cm2/Vs could be obtained for depletion mode devices.« less

Doping β-Ga2O3 with europium: influence of the implantation and annealing temperature

NASA Astrophysics Data System (ADS)

Peres, M.; Lorenz, K.; Alves, E.; Nogales, E.; Méndez, B.; Biquard, X.; Daudin, B.; Víllora, E. G.; Shimamura, K.

2017-08-01

β-Ga2O3 bulk single crystals were doped by ion implantation at temperatures from room temperature to 1000 °C, using a 300 keV Europium beam with a fluence of 1  ×  1015 at cm-2. Rising the implantation temperature from room temperature to 400-600 °C resulted in a significant increase of the substitutional Eu fraction and of the number of Eu ions in the 3+  charge state as well as in a considerable decrease of implantation damage. Eu is found in both charge states 2+  and 3+  and their relative fractions are critically dependent on the implantation and annealing temperature, suggesting that defects play an important role in stabilizing one of the charge states. The damage recovery during post-implant annealing is a complex process and typically defect levels first increase for intermediate annealing temperatures and a significant recovery of the crystal only starts around 1000 °C. Cathodoluminescence spectra are dominated by the sharp Eu3+ related intra-ionic 4f transition lines in the red spectral region. They show a strong increase of the emission intensity with increasing annealing temperature, in particular for samples implanted at elevated temperature, indicating the optical activation of Eu3+ ions. However, no direct correlation of emission intensity and Eu3+ fraction was found, again pointing to the important role of defects on the physical properties of these luminescent materials.

Ultrahigh-Temperature Regeneration of Long Period Gratings (LPGs) in Boron-Codoped Germanosilicate Optical Fibre

PubMed Central

Liu, Wen; Cook, Kevin; Canning, John

2015-01-01

The regeneration of UV-written long period gratings (LPG) in boron-codoped germanosilicate “W” fibre is demonstrated and studied. They survive temperatures over 1000 °C. Compared with regenerated FBGs fabricated in the same type of fibre, the evolution curves of LPGs during regeneration and post-annealing reveal even more detail of glass relaxation. Piece-wise temperature dependence is observed, indicating the onset of a phase transition of glass in the core and inner cladding at ~500 °C and ~250 °C, and the melting of inner cladding between 860 °C and 900 °C. An asymmetric spectral response with increasing and decreasing annealing temperature points to the complex process dependent material system response. Resonant wavelength tuning by adjusting the dwell temperature at which regeneration is undertaken is demonstrated, showing a shorter resonant wavelength and shorter time for stabilisation with higher dwell temperatures. All the regenerated LPGs are nearly strain-insensitive and cannot be tuned by applying loads during annealing as done for regenerated FBGs. PMID:26307991

In-situ XRD vs ex-situ vacuum annealing of tantalum oxynitride thin films: Assessments on the structural evolution

NASA Astrophysics Data System (ADS)

Cunha, L.; Apreutesei, M.; Moura, C.; Alves, E.; Barradas, N. P.; Cristea, D.

2018-04-01

The purpose of this work is to discuss the main structural characteristics of a group of tantalum oxynitride (TaNxOy) thin films, with different compositions, prepared by magnetron sputtering, and to interpret and compare the structural changes, by X-ray diffraction (XRD), when the samples are vacuum annealed under two different conditions: i) annealing, followed by ex-situ XRD: one sample of each deposition run was annealed at a different temperature, until a maximum of 800 °C, and the XRD patterns were obtained, at room temperature, after each annealing process; ii) annealing with in-situ XRD: the diffraction patterns are obtained, at certain temperatures, during the annealing process, using always the same sample. In-situ XRD annealing could be an interesting process to perform annealing, and analysing the evolution of the structure with the temperature, when compared to the classical process. A higher structural stability was observed in some of the samples, particularly on those with highest oxygen content, but also on the sample with non-metal (O + N) to metal (Ta) ratio around 0.5.

Mitigating Abnormal Grain Growth for Friction Stir Welded Al-Li 2195 Spun Formed Domes

NASA Technical Reports Server (NTRS)

Chen, Po-Shou; Russell, Carolyn

2012-01-01

Formability and abnormal grain growth (AGG) are the two major issues that have been encountered for Al alloy spun formed dome development using friction stir welded blanks. Material properties that have significant influence on the formability include forming range and strain hardening exponent. In this study, tensile tests were performed for two 2195 friction stir weld parameter sets at 400 F to study the effects of post weld anneal on the forming range and strain hardening exponent. It was found that the formability can be enhanced by applying a newly developed post weld anneal to heat treat the friction stir welded panels. This new post weld anneal leads to a higher forming range and much improved strain hardening exponent. AGG in the weld nugget is known to cause a significant reduction of ductility and fracture toughness. This study also investigated how AGG may be influenced by the heating rate to the solution heat treatment temperature. After post-weld annealing, friction stir welds were strained to 15% and 39% by compression at 400 F before they were subjected to SHT at 950 F for 1 hour. Salt bath SHT is very effective in reducing the grain size as it helps arrest the onset of AGG and promote normal recrystallization and grain growth. However, heat treating a 18 ft dome using a salt bath is not practical. Efforts are continuing at Marshall Space Flight Center to identify the welding parameters and heat treating parameters that can help mitigate the AGG in the friction stir welds.

Laser post-processing of Inconel 625 made by selective laser melting

NASA Astrophysics Data System (ADS)

Witkin, David; Helvajian, Henry; Steffeney, Lee; Hansen, William

2016-04-01

The effect of laser remelting of surfaces of as-built Selective Laser Melted (SLM) Inconel 625 was evaluated for its potential to improve the surface roughness of SLM parts. Many alloys made by SLM have properties similar to their wrought counterparts, but surface roughness of SLM-made parts is much higher than found in standard machine shop operations. This has implications for mechanical properties of SLM materials, such as a large debit in fatigue properties, and in applications of SLM, where surface roughness can alter fluid flow characteristics. Because complexity and netshape fabrication are fundamental advantages of Additive Manufacturing (AM), post-processing by mechanical means to reduce surface roughness detracts from the potential utility of AM. Use of a laser to improve surface roughness by targeted remelting or annealing offers the possibility of in-situ surface polishing of AM surfaces- the same laser used to melt the powder could be amplitude modulated to smooth the part during the build. The effects of remelting the surfaces of SLM Inconel 625 were demonstrated using a CW fiber laser (IPG: 1064 nm, 2-50 W) that is amplitude modulated with a pulse profile to induce remelting without spallation or ablation. The process achieved uniform depth of melting and improved surface roughness. The results show that with an appropriate pulse profile that meters the heat-load, surface features such as partially sintered powder particles and surface connected porosity can be mitigated via a secondary remelting/annealing event.

Rietveld analysis of the effect of annealing atmosphere on phase evolution of nanocrystalline TiO2 powders.

PubMed

Salari, M; Rezaee, M; Chidembo, A T; Konstantinov, K; Liu, H K

2012-06-01

The structural evolution of nanocrystalline TiO2 was studied by X-ray diffraction (XRD) and the Rietveld refinement method (RRM). TiO2 powders were prepared by the sol-gel technique. Post annealing of as-synthesized powders in the temperature range from 500 degrees C to 800 degrees C under air and argon atmospheres led to the formation of TiO2 nanoparticles with mean crystallite size in the range of 37-165 nm, based on the Rietveld refinement results. It was found that the phase structure, composition, and crystallite size of the resulting particles were dependent on not only the annealing temperature, but also the annealing atmosphere. Rietveld refinement of the XRD data showed that annealing the powders under argon atmosphere promoted the polymorphic phase transformation from anatase to rutile. Field emission scanning electron microscopy (FESEM) was employed to investigate the morphology and size of the annealed powders.

Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering

NASA Astrophysics Data System (ADS)

Ke, Shaoying; Lin, Shaoming; Ye, Yujie; Mao, Danfeng; Huang, Wei; Xu, Jianfang; Li, Cheng; Chen, Songyan

2018-03-01

We report a near-bubble-free low-temperature silicon (Si) wafer bonding with a thin amorphous Ge (a-Ge) intermediate layer. The DC-magnetron-sputtered a-Ge film on Si is demonstrated to be extremely flat (RMS = 0.28 nm) and hydrophilic (contact angle = 3°). The effect of the post-annealing temperature on the surface morphology and crystallinity of a-Ge film at the bonded interface is systematically identified. The relationship among the bubble density, annealing temperature, and crystallinity of a-Ge film is also clearly clarified. The crystallization of a-Ge film firstly appears at the bubble region. More interesting feature is that the crystallization starts from the center of the bubbles and sprawls to the bubble edge gradually. The H2 by-product is finally absorbed by intermediate Ge layer with crystalline phase after post annealing. Moreover, the whole a-Ge film out of the bubble totally crystallizes when the annealing time increases. This Ge integration at the bubble region leads to the decrease of the bubble density, which in turn increases the bonding strength.

Properties of WO3-x Electrochromic Thin Film Prepared by Reactive Sputtering with Various Post Annealing Temperatures

NASA Astrophysics Data System (ADS)

Kim, Min Hong; Choi, Hyung Wook; Kim, Kyung Hwan

2013-11-01

The WO3-x thin films were prepared on indium tin oxide (ITO) coated glass at 0.7 oxygen flow ratio [O2/(Ar+O2)] using the facing targets sputtering (FTS) system at room temperature. In order to obtain the annealing effect, as-deposited thin films were annealed at temperatures of 100, 200, 300, 400, and 500 °C for 1 h in open air. The structural properties of the WO3-x thin film were measured using an X-ray diffractometer. The WO3-x thin films annealed at up to 300 °C indicated amorphous properties, while those annealed above 400 °C indicated crystalline properties. The electrochemical and optical properties of WO3-x thin films were measured using cyclic voltammetry and a UV/vis spectrometer. The maximum value of coloration efficiency obtained was 34.09 cm2/C for thin film annealed at 200 °C. The WO3-x thin film annealed at 200 °C showed superior electrochromic properties.

Improved electrical properties after post annealing of Ba0.7Sr0.3TiO3 thin films for MIM capacitor applications

NASA Astrophysics Data System (ADS)

Rouahi, A.; Kahouli, A.; Sylvestre, A.; Jomni, F.; Defaÿ, E.; Yangui, B.

2012-11-01

Dielectric measurements have been performed on ion beam sputtering (IBS) barium strontium titanate Ba0.7Sr0.3TiO3 thin films at annealing temperatures 470 and 700 °C using impedance spectroscopy. The effect of the annealing temperature upon the electrical properties of the films is also investigated using capacitance-voltage techniques. Increasing annealing temperature suggested the increases of density and grain size, whereas the density of the trapped oxygen vacancy may be decreasing with increasing annealing temperature. The barrier height ( E a) of the oxygen vacancy decreases with increasing annealing temperature. The C- V characteristics were investigated in relation to the annealing temperature to identify the anomalous capacitance in the MIM configuration films. Among all measurement temperatures, it was observed that the data fit well by the "LGD" model. The interfacial effect and its dependence of morphology structure have been studied, and the results are discussed.

Improvements in the bias illumination stability of amorphous InGaZnO thin-film transistors by using thermal treatments

NASA Astrophysics Data System (ADS)

Kim, Woo-Byung; Lee, Dong Keun; Ryu, Sang Ouk

2014-07-01

The a-IGZO deposited by using the rf sputtering method features a conductive or an insulator characteristic based on amount of oxygen. We demonstrated that a post-treatment affects the resistance patterns of particular-sized InGaZnO(IGZO) thin films in a-IGZO thin-film transistors (TFTs). Post-annealing shifted the driving voltage of a-IGZO TFT to positive or negative values, depending on the annealing temperatures. Post-annealing may introduce oxygen vacancies or desorbed oxygen in the IGZO thin film. The changed driving voltage of IGZO TFTs coincides with the shift of the resistance pattern of IGZO. The fabricated a-IGZO TFTs exhibited a field effect mobility of 6.2 cm2/Vs, an excellent subthreshold gate swing of 0.32 V/decade, and a high I on/off ratio of > 109. Under positive bias illumination stress (PBIS) and negative bias illumination stress (NBIS), after 3,600 seconds, the device threshold voltage shifted about 0.2 V and 0.3 V, respectively.

Formation of pure Cu nanocrystals upon post-growth annealing of Cu-C material obtained from focused electron beam induced deposition: comparison of different methods.

PubMed

Szkudlarek, Aleksandra; Rodrigues Vaz, Alfredo; Zhang, Yucheng; Rudkowski, Andrzej; Kapusta, Czesław; Erni, Rolf; Moshkalev, Stanislav; Utke, Ivo

2015-01-01

In this paper we study in detail the post-growth annealing of a copper-containing material deposited with focused electron beam induced deposition (FEBID). The organometallic precursor Cu(II)(hfac)2 was used for deposition and the results were compared to that of compared to earlier experiments with (hfac)Cu(I)(VTMS) and (hfac)Cu(I)(DMB). Transmission electron microscopy revealed the deposition of amorphous material from Cu(II)(hfac)2. In contrast, as-deposited material from (hfac)Cu(I)(VTMS) and (hfac)Cu(I)(DMB) was nano-composite with Cu nanocrystals dispersed in a carbonaceous matrix. After annealing at around 150-200 °C all deposits showed the formation of pure Cu nanocrystals at the outer surface of the initial deposit due to the migration of Cu atoms from the carbonaceous matrix containing the elements carbon, oxygen, and fluorine. Post-irradiation of deposits with 200 keV electrons in a transmission electron microscope favored the formation of Cu nanocrystals within the carbonaceous matrix of freestanding rods and suppressed the formation on their surface. Electrical four-point measurements on FEBID lines from Cu(hfac)2 showed five orders of magnitude improvement in conductivity when being annealed conventionally and by laser-induced heating in the scanning electron microscope chamber.

Annealing of Solar Cells and Other Thin Film Devices

NASA Technical Reports Server (NTRS)

Escobar, Hector; Kuhlman, Franz; Dils, D. W.; Lush, G. B.; Mackey, Willie R. (Technical Monitor)

2001-01-01

Annealing is a key step in most semiconductor fabrication processes, especially for thin films where annealing enhances performance by healing defects and increasing grain sizes. We have employed a new annealing oven for the annealing of CdTe-based solar cells and have been using this system in an attempt to grow US on top of CdTe by annealing in the presence of H2S gas. Preliminary results of this process on CdTe solar cells and other thin-film devices will be presented.

Effect of thermal annealing on the redistribution of alkali metals in Cu(In,Ga)Se 2 solar cells on glass substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamikawa, Yukiko; Nishinaga, Jiro; Ishizuka, Shogo

The precise control of alkali-metal concentrations in Cu(In,Ga)Se 2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance frommore » the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.« less

Effect of thermal annealing on the redistribution of alkali metals in Cu(In,Ga)Se 2 solar cells on glass substrate

DOE PAGES

Kamikawa, Yukiko; Nishinaga, Jiro; Ishizuka, Shogo; ...

2018-03-07

The precise control of alkali-metal concentrations in Cu(In,Ga)Se 2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance frommore » the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.« less

Directly spheroidizing during hot deformation in GCr15 steels

NASA Astrophysics Data System (ADS)

Zhu, Guo-hui; Zheng, Gang

2008-03-01

The spheroidizing heat treatment is normally required prior to the cold forming in GCr15 steel in order to improve its machinability. In the conventional spheroidizing process, very long annealing time, generally more than 10 h, is needed to assure proper spheroidizing. It results in low productivity, high cost, and especially high energy consumption. Therefore, the possibility of directly spheroidizing during hot deformation in GCr15 steel is preliminarily explored. The effect of hot deformation parameters on the final microstructure and hardness is investigated systematically in order to develop a directly spheroidizing technology. Experimental results illustrate that low deformation temperature and slow cooling rate is the favorite in directly softening and/or spheroidizing during hot deformation, which allows the properties of asrolled GCr15 to be applicable for post-machining without requirement of prior annealing.

Effect of annealing on the laser induced damage of polished and CO2 laser-processed fused silica surfaces

NASA Astrophysics Data System (ADS)

Doualle, T.; Gallais, L.; Cormont, P.; Donval, T.; Lamaignère, L.; Rullier, J. L.

2016-06-01

We investigate the effect of different heat treatments on the laser-induced damage probabilities of fused silica samples. Isothermal annealing in a furnace is applied, with different temperatures in the range 700-1100 °C and 12 h annealing time, to super-polished fused silica samples. The surface flatness and laser damage probabilities at 3 ns, 351 nm are measured before and after the different annealing procedures. We have found a significant improvement of the initial laser damage probabilities of the silica surface after annealing at 1050 °C for 12 h. A similar study has been conducted on CO2 laser-processed sites on the surface of the samples. Before and after annealing, we have studied the morphology of the sites, the evolution of residual stress, and the laser-induced damage threshold measured at 351 nm, 3 ns. In this case, we observe that the laser damage resistance of the laser created craters can reach the damage level of the bare fused silica surface after the annealing process, with a complete stress relieve. The obtained results are then compared to the case of local annealing process by CO2 laser irradiation during 1 s, and we found similar improvements in both cases. The different results obtained in the study are compared to numerical simulations made with a thermo-mechanical model based on finite-element method that allows the simulation of the isothermal or the local annealing process, the evolution of stress and fictive temperature. The simulation results were found to be very consistent with experimental observations for the stresses evolution after annealing and estimation of the heat affected area during laser-processing based on the density dependence with fictive temperature. Following this work, the temperature for local annealing should reach 1330-1470 °C for an optimized reduction of damage probability and be below the threshold for material removal, whereas furnace annealing should be kept below the annealing point to avoid sample deformation.

Process development of two high strength tantalum base alloys (ASTAR-1211C and ASTAR-1511C)

NASA Technical Reports Server (NTRS)

Ammon, R. L.

1974-01-01

Two tantalum base alloys, Ta-12W-1.0Re-0.7Hf-0.025C(ASTAR-1211C) and Ta-15W-1.0Re-0.7Hf-0.025C(ASTAR-1511C), were cast as 12.5 cm (5 inch) diameter ingots and processed to swaged rod, sheet, forged plate, and tubing. Swaged rod was evaluated with respect to low temperature ductility, elevated temperature tensile properties, and elevated temperature creep behavior. A standard swaging process and final annealing schedule were determined. Elevated temperature tensile properties, low temperature impact properties, low temperature DBTT behavior, and extended elevated temperature creep properties were determined. A process for producing ASTAR-1211C and ASTAR-1511C sheet were developed. The DBTT properties of GTA and EB weld sheet given post-weld anneal and thermal aging treatments were determined using bend and tensile specimens. High and low temperature mechanical properties of forging ASTAR-1211C and ASTAR-1511C plate were determined as well as elevated temperature creep properties. Attempts to produce ASTAR-1211C tubing were partially successful while attempts to make ASTAR-1511C tubing were completely unsuccessful.

Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing

NASA Astrophysics Data System (ADS)

Wang, Xinglu; Qin, Xiaoye; Wang, Wen; Liu, Yue; Shi, Xiaoran; Sun, Yong; Liu, Chen; Zhao, Jiali; Zhang, Guanhua; Liu, Hui; Cho, Kyeongjae; Wu, Rui; Wang, Jiaou; Zhang, Sen; Wallace, Robert M.; Dong, Hong

2018-06-01

A systematic study of the interfacial chemistry for the HCl pretreated and native oxide InAs(100) samples upon atomic layer deposition (ALD) of Al2O3, and the post deposition annealing (PDA) process has been carried out, using in situ synchrotron radiation photoelectron spectroscopy. The "clean up" effect for the native oxide sample is detected, but it is not observed for the HCl pretreated sample. The out-diffusion and desorption of both In and As oxides have been characterized during the ALD process and the following PDA process. The surface morphology evolution during the PDA process is studied by in situ photo-emission electron microscopy. The bubbles emerged after PDA at 360 °C and grew up at 370 °C. After PDA at 400 °C and at higher temperatures, pits are seen in some areas, and the tear up of the Al2O3 film is seen in other areas with the formation of indium droplets. This study gives insight in the mechanism of elemental diffusion/desorption, which may associate the reliability of III-V semiconductor based devices.

Mitigating IASCC of Reactor Core Internals by Post-Irradiation Annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Was, Gary

This final report summarizes research performed during the period between September 2012 and December 2016, with the objective of establishing the effectiveness of post-irradiation annealing (PIA) as an advanced mitigation strategy for irradiation-assisted stress corrosion cracking (IASCC). This was completed by using irradiated 304SS control blade material to conduct crack initiation and crack growth rate (CGR) experiments in simulated BWR environment. The mechanism by which PIA affects IASCC susceptibility will also be verified. The success of this project will provide a foundation for the use of PIA as a mitigation strategy for core internal components in commercial reactors.

Domain Engineered Magnetoelectric Thin Films for High Sensitivity Resonant Magnetic Field Sensors

DTIC Science & Technology

2011-12-01

synthesis and texture analysis Sol-gel deposition and RF sputtering process was developed for deposition of PZT on Pt/Ti/Si02/Si (hereafter...well textured (i.e. with preferred crystalline orientation). To texture and obtain crack-free thick PZT RF films, we employed pre- treated substrates...and post-deposition annealing. One pre-treatment was the use of seed layer of textured PZT sol-gel thin film of thickness 65-85nm [1]. • Oean

Magneto-optical properties of nanometer crystal giant magneto-optical BiAlDyIG thin film materials post-treated by rapid recurrent thermal annealing method

NASA Astrophysics Data System (ADS)

Qing-hui, Yang; Huai-wu, Zhang; Ying-li, Liu; Qiye, Wen

2014-05-01

In this paper, high quality BiAlDyIG thin films with different bismuth contents have been prepared by using a sol-gel method and post-treated by a rapid recurrent thermal annealing (RRTA) method. Results indicate that the RRTA method improves the Faraday Effect of the films notably, a maximum Faraday angle of -4.9° in the 450 nm thickness film (Bi1.96Dy1.04Fe4AlO12) was obtained at the wavelength of 520 nm, which is about two times larger than that of the common thermal annealed sample, and furthermore the reason of giant Faraday angle was also analyzed in detail. These results are potentially helpful to improve the recording density and signal-to-noise ratio of magneto-optical disk.

Study of SiO{sub 2}/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chanthaphan, Atthawut, E-mail: chanthaphan@asf.mls.eng.osaka-u.ac.jp; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi

An alternative and effective method to perform interface nitridation for 4H-SiC metal-oxide-semiconductor (MOS) devices was developed. We found that the high-temperature post-oxidation annealing (POA) in N{sub 2} ambient was beneficial to incorporate a sufficient amount of nitrogen atoms directly into thermal SiO{sub 2}/SiC interfaces. Although N{sub 2}-POA was ineffective for samples with thick thermal oxide layers, interface nitridation using N{sub 2}-POA was achieved under certain conditions, i.e., thin SiO{sub 2} layers (< 15 nm) and high annealing temperatures (>1350°C). Electrical characterizations of SiC-MOS capacitors treated with high-temperature N{sub 2}-POA revealed the same evidence of slow trap passivation and fast trapmore » generation that occurred in NO-treated devices fabricated with the optimized nitridation conditions.« less

Annealing effect on the magnetic induced austenite transformation in polycrystalline freestanding Ni-Co-Mn-In films produced by co-sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crouïgneau, G., E-mail: guillaume.crouigneau@neel.cnrs.fr; Univ. Grenoble Alpes, CRETA, F-38000 Grenoble; CNRS, Inst. NEEL, F-38000 Grenoble

2015-01-21

Ni-Co-Mn-In freestanding films, with a magneto-structural transformation at room temperature were successfully produced by co-sputtering and post-annealing methods leading to film composition mastering. For a post-annealing temperature of 700 °C, the phase transformation occurs slightly above room temperature, with a twisted martensitic microstructure phase observed at 300 K by Field Emission Scanning Electron Microscopy. Magnetization measurements on a polycrystalline film showed a phase transformation from a weakly magnetic martensite to a magnetic austenite phase. Moreover, an inverse magnetocaloric effect with an entropy variation of 4 J/kg K under 5 T was also measured. A simple magneto-actuation experiment based on the magnetic induced austenite transformation wasmore » also successfully completed. The possibility to insert such films in microsystems is clearly demonstrated in this work.« less

Post-Growth Annealing of Bridgman-grown CdZnTe and CdMnTe Crystals for Room-temperature Nuclear Radiation Detectors

DOE PAGES

Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander; ...

2015-02-11

Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an ordermore » of 10 2. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10 -5 mbar, we observed the diffusion of Te from the sample, causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10 -5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on certain conditions.« less

L10-Ordered Thin Films with High Perpendicular Magnetic Anisotropy for STT-MRAM Applications

NASA Astrophysics Data System (ADS)

Huang, Efrem Yuan-Fu

The objective of the research conducted herein was to develop L10-ordered materials and thin film stack structures with high perpendicular magnetic anisotropy (PMA) for spin-transfertorque magnetoresistive random access memory (STT-MRAM) applications. A systematic approach was taken in this dissertation, culminating in exchange coupled L1 0-FePt and L10- MnAl heterogeneous structures showing great promise for developing perpendicular magnetic tunnel junctions (pMTJs) with both high thermal stability and low critical switching current. First, using MgO underlayers on Si substrates, sputtered MnAl films were systematically optimized, ultimately producing a Si substrate/MgO (20 nm)/MnAl (30)/Ta (5) film stack with a high degree of ordering and large PMA. Next, noting the incompatibility of insulating MgO underlayers with industrial-scale CMOS processes, attention was turned to using conductive underlayers. TiN was found to excel at promoting growth of L10-MnAl, with optimized films showing improved magnetic properties over those fabricated on MgO underlayers. The use of different post-annealing processes was then studied as an alternative to in situ annealing. Rapid thermal annealing (RTA) was found to produce PMA in films at lower annealing temperatures than tube furnace annealing, but tube furnace annealing produced films with higher maximum PMA than RTA. While annealed samples had lower surface roughness than those ordered by high in situ deposition temperatures, relying solely on annealing to achieve L10-ordering resulted drastically reduced PMA. Finally, heterogeneous L10-ordered FePt/MgO/MnAl film stacks were explored for pMTJs. Film stacks with MgO barrier layers thinner than 2 nm showed significant interdiffusion between the FePt and MnAl, while film stacks with thicker MgO barrier layers exhibited good ordering and high PMA in both the FePt and MnAl films. It is believed that this limitation is caused by the roughness of the underlying FePt, which was thicker than 2 nm. Unfortunately, MgO barrier layers thinner than 2 nm are needed to make good MTJs. With further study, thin, continuous barriers may be achievable for high-PMA, L10- ordered materials with more materials exploration, deposition optimization, and more advanced thin film processing techniques and fabrication equipment. Use of appropriate underlayers, capping layers, dopant elements, and improved fabrication techniques may help reduce surface roughness while preserving PMA. If smooth electrodes can be developed, the heterogeneous structures discussed have great potential in taking advantage of exchange coupling for developing pMTJs with both high thermal stability and low critical switching current. (Abstract shortened by ProQuest.).

Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

NASA Astrophysics Data System (ADS)

Vinattieri, A.; Batignani, F.; Bogani, F.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Zhu, D.; Humphreys, C. J.

2014-02-01

By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Congfei; Liang, Xiaojuan, E-mail: lxj6126@126

The titanate, is a material of interest for various energy applications, including photovoltaics, catalysts, and high-rate energy storage devices. Herein, its related materials, CuO/CaTi{sub 4}O{sub 9} [CCTO] thin films, were successfully fabricated on SrTiO{sub 3} (100) substrates by RF magnetron sputtering assisted with subsequent oxygen annealing. This obtained CCTO thin films were then systemically studied by X-ray powder diffraction (XRD), atomic force microscopy (AFM), scan electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). It was found that CuO and CaTi{sub 4}O{sub 9} (001) particles were closely accumulated together on the surface of the substrate inmore » the annealing process after comparing with that of the as-prepared thin film, which was verified by SEM and AFM results. Furthermore, we investigated the third-order nonlinear optical (NLO) properties of the as-prepared and annealed CCTO thin film by means of the Z-scan technique using 650 nm femtosecond laser pulse. Post-deposition oxygen annealing was found to modify the morphological characteristics of the films, resulting in enhancing their NLO properties. The observation of NLO performance of annealed CCTO thin film indicates that RF magnetron sputtering is a feasible method for the fabrication of optical thin films, which can be expanded to fabricate other NLO materials from the corresponding dispersions. Naturally, we concluded that the CCTO thin film occupy a better NLO property, and thus enlarge its application in nonlinear optics. - Highlights: • The CCTO thin film was prepared using the RF magnetron sputtering and oxygen annealing. • The film was prepared on the SrTiO{sub 3}(100) substrates with a Ca{sub 2}CuO{sub 3} target. • The oxygen annealing was found can effectively enhance the film quality and NLO property. • The film was characterized using XPS, SEM, AFM, TEM, XRD and Z-scan techniques.« less

Insights on the fundamental lithium storage behavior of all-solid-state lithium batteries containing the LiNi0.8Co0.15Al0.05O2 cathode and sulfide electrolyte

NASA Astrophysics Data System (ADS)

Peng, Gang; Yao, Xiayin; Wan, Hongli; Huang, Bingxin; Yin, Jingyun; Ding, Fei; Xu, Xiaoxiong

2016-03-01

An insightful study on the fundamental lithium storage behavior of all-solid-state lithium battery with a structure of LiNi0.8Co0.15Al0.05O2 (NCA)/Li10GeP2S12/Li-In is carried out in this work. The relationship between electrochemical performances and particle size, surface impurities and defects of the NCA positive material is systematically investigated. It is found that a ball-milling technique can decrease the particle size and remove surface impurities of the NCA cathode while also give rise to surface defects which could be recovered by a post-annealing process. The results indicate that the interfacial resistance between the NCA and Li10GeP2S12 is obviously decreased during the ball-milling followed by a post-annealing. Consequently, the discharge capacity of NCA in the NCA/Li10GeP2S12/Li-In solid-state battery is significantly enhanced, which exhibits a discharge capacity of 146 mAh g-1 at 25 °C.

Structural characterization of nanocrystalline hydroxyapatite and adhesion of pre-osteoblast cells

NASA Astrophysics Data System (ADS)

Zhu, Xiaolong; Eibl, Oliver; Berthold, Christoph; Scheideler, Lutz; Geis-Gerstorfer, Jürgen

2006-06-01

Nanocrystalline hydroxyapatite (Nano HA), a prototype of minerals of bones and teeth, attracts increasing interest in medicine and dentistry. Different parameters for synthesis and post-treatment were investigated to determine their effects on crystallinity of nano HA, and in vitro cell responses to nano HA were studied. XRD and TEM analyses indicate that the crystallinity of nano HA synthesized by a chemical method was within the range of 15-50 nm, which is adapted to natural minerals of hard tissues. Increasing the ageing temperature significantly increased the crystallinity of nano HA, while lengthening the ageing time or varying the post-ageing drying process did not have any influence on its crystallinity. Nano HA annealed between 300 and 900 °C showed a small increase in crystallinity with increasing annealing temperature due to the long-range ordering effect. Cell attachment and spreading on nano HA were lower than those on pure titanium, and decreased as the crystallinity of nano HA increased. However, cells on nano HA demonstrated well-developed filopodia and lamelliopodia, which facilitate migration of the cells on it. This may benefit osteogenesis at the interface between bone and nano HA in vivo.

Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

NASA Astrophysics Data System (ADS)

Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander A.; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Giuseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

2015-06-01

Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 102. During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10-5 mbar, we observed the diffusion of Te from the sample, so causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10-5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 μm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on the conditions in local regions, such as composition and structure, as well as on the annealing conditions.

Post-activation of in situ Bsbnd F codoped g-C3N4 for enhanced photocatalytic H2 evolution

NASA Astrophysics Data System (ADS)

Cui, Yanjuan; Wang, Hao; Yang, Chuanfeng; Li, Ming; Zhao, Yimeng; Chen, Fangyan

2018-05-01

Porous graphitic carbon nitride polymer (p-CN-BF) with enhanced photoproduction of H2 from water was prepared by a two-step treatment process including in-situ Boron and fluorine codoping using [Emim]BF4 as dopants followed by post-calcination in air. Several techniques were employed to characterize the modified structure and elucidate the doping state of B and F. It was shown that in-situ doping method is necessary for efficient doping of heteroatoms into the molecular composition of CN. The difference of doping state of B and F was that B doping primary existing in the inside skeleton of CN, but F doping merely presents in the surface layer. The inside doped B made for the enhanced visible light absorption and the production of uniform porous structure during post-sintering process. By the synergistic effect of Bsbnd F codoping and post-activation, p-CN-BF showed much enhanced photoelectron generation, transmission and separation, therefore, it performs high photocatalytic activity for H2 evolution (351 μmol h-1), which was 13 and 5 times higher than samples only modified by Bsbnd F codoping (CN-BF) or post-annealing (P-CN).

Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gillinger, M.; Schneider, M.; Bittner, A.

2015-02-14

Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 hmore » in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.« less

Reconstructing the energy band electronic structure of pulsed laser deposited CZTS thin films intended for solar cell absorber applications

NASA Astrophysics Data System (ADS)

Pandiyan, Rajesh; Oulad Elhmaidi, Zakaria; Sekkat, Zouheir; Abd-lefdil, Mohammed; El Khakani, My Ali

2017-02-01

We report here on the use of pulsed KrF-laser deposition (PLD) technique for the growth of high-quality Cu2ZnSnS4 (CZTS) thin films onto Si, and glass substrates without resorting to any post sulfurization process. The PLD-CZTS films were deposited at room temperature (RT) and then subjected to post annealing at different temperatures ranging from 200 to 500 °C in Argon atmosphere. The X-ray diffraction and Raman spectroscopy confirmed that the PLD films crystallize in the characteristic kesterite CZTS structure regardless of their annealing temperature (Ta), but their crystallinity is much improved for Ta ≥ 400 °C. The PLD-CZTS films were found to exhibit a relatively dense morphology with a surface roughness (RMS) that increases with Ta (from ∼14 nm at RT to 70 nm at Ta = 500 °C with a value around 40 nm for Ta = 300-400 °C). The optical bandgap of the PLD-CZTS films, was derived from UV-vis transmission spectra analysis, and found to decrease from 1.73 eV for non-annealed films to ∼1.58 eV for those annealed at Ta = 300 °C. These band gap values are very close to the optimum value needed for an ideal solar cell absorber. In order to achieve a complete reconstruction of the one-dimensional energy band structure of these PLD-CZTS absorbers, we have combined both XPS and UPS spectroscopies to determine their chemical bondings, the position of their valence band maximum (relative to Fermi level), and their work function values. This enabled us to sketch out, as accurately as possible, the band alignment of the heterojunction interface formed between CZTS and both CdS and ZnS buffer layer materials.

Grain engineering by ultrasonic substrate vibration post-treatment of wet perovskite films for annealing-free, high performance, and stable perovskite solar cells.

PubMed

Xiong, Hao; Zabihi, Fatemeh; Wang, Hongzhi; Zhang, Qinghong; Eslamian, Morteza

2018-05-10

Perovskite solar cells (PSCs) have gained great interest, owing to a fast increase in their power conversion efficiency (PCE), within a few years. However, their wide application and scale-up are hampered due to multiple obstacles, such as chemical instability, which leads to a short lifetime, and their complicated reaction and crystallization, which requires thermal annealing. Here, we address these issues using the ultrasonic substrate vibration post treatment (SVPT) applied on the as-spun perovskite wet films, so as to achieve a uniform, microscale and stable mixed-halide and mixed-cation perovskite layer, (FAPbI3)0.85(MAPbBr3)0.15, without the need for a conventional thermal annealing step. This is achieved by the creation of fluid micromixing and in situ annealing within the solution, caused by the ultrasonic excitation of the wet film. The optoelectronic properties of the perovskite films subjected to the SVPT, including photoemission, carrier lifetime and band gap, are remarkably improved compared to the conventionally annealed films. When incorporated into a planar PSC, a maximum PCE of 18.55% was achieved, compared to 15.17% for the control device, with high reproducibility and no hysteresis, and the device retained 80% of its initial PCE, over a period of 20 days of storage under ambient conditions.

P-type doping of GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wong, Raechelle Kimberly

2000-04-01

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C.more » The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.« less

Effect of thermal annealing Super Yellow emissive layer on efficiency of OLEDs

PubMed Central

Burns, Samantha; MacLeod, Jennifer; Trang Do, Thu; Sonar, Prashant; Yambem, Soniya D.

2017-01-01

Thermal annealing of the emissive layer of an organic light emitting diode (OLED) is a common practice for solution processable emissive layers and reported annealing temperatures varies across a wide range of temperatures. We have investigated the influence of thermal annealing of the emissive layer at different temperatures on the performance of OLEDs. Solution processed polymer Super Yellow emissive layers were annealed at different temperatures and their performances were compared against OLEDs with a non-annealed emissive layer. We found a significant difference in the efficiency of OLEDs with different annealing temperatures. The external quantum efficiency (EQE) reached a maximum of 4.09% with the emissive layer annealed at 50 °C. The EQE dropped by ~35% (to 2.72%) for OLEDs with the emissive layers annealed at 200 °C. The observed performances of OLEDs were found to be closely related to thermal properties of polymer Super Yellow. The results reported here provide an important guideline for processing emissive layers and are significant for OLED and other organic electronics research communities. PMID:28106082

The charge-discharge characteristics and diffusion mechanism of Ti-Si-Al thin film anode using an electrically induced crystallization process

NASA Astrophysics Data System (ADS)

Chen, Yen-Ting; Hung, Fei-Yi; Lui, Truan-Sheng

2018-04-01

In this study, an Al-Si-Ti multilayer thin film structure is designed as the anode of a lithium ion battery. The novel structure restricts the expansion of Si during charge-discharge, and its battery capacity can reach 1112 mA h g-1 after a 100-cycle charge-charging test under a 0.2 C charge-discharge rate without annealing. Notably, after a 200 °C vacuum annealing process, the cyclic capacity of the anode rises to 1208 mA h g-1 through crystallization of the Al and Ti buffer layer. However, its thermal diffusion behavior in the Al/Si or Ti/Si interfaces seriously reduces the performance and restricts the expansion of Si. The electrically induced crystallization (EIC) process not only performs crystallization but also controls the interfacial stability, after which its capacity can obviously improve to 1602 mA h g-1 after 100 cycles. Using EIC, the electron flow drives the Cu and Al atoms to endow the Si matrix with doping properties and further increases the electron conductivity of the anode. This result demonstrates that the EIC process is a suitable post-treatment process for multilayer anodes and provides a reference for future battery designs.

Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Sobri, M.; Shuhaimi, A.; Hakim, K. M.; Ganesh, V.; Mamat, M. H.; Mazwan, M.; Najwa, S.; Ameera, N.; Yusnizam, Y.; Rusop, M.

2014-06-01

Nickel (Ni)/indium tin oxide (ITO) nanostructures were deposited on glass and silicon (1 1 1) substrates by RF magnetron sputtering using nickel and ITO (In-Sn, 90-10%) targets. The post-deposition annealing has been performed for Ni/ITO films in air. The effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. We found the appearance of (6 2 2) peak in addition to (4 0 0) and (2 2 2) major peaks, which indicates an enhancement of the film crystallinity at high temperature annealing of 650 °C. The samples show higher transmittance of more than 90% at 470 nm after annealing which is suitable for blue light emitting diode (LED) application. The optical energy bandgap is shifted from 3.51 to 3.65 eV for the Ni/ITO film after annealing at 650 °C. In addition, increasing the annealing temperature improves the film electrical properties. The resistivity value decreases from 3.77 × 10-5 Ω cm to 1.09 × 10-6 Ω cm upon increasing annealing temperature.

Method of making low work function component

DOEpatents

Robinson, Vance [Niskayuna, NY; Weaver, Stanton Earl [Northville, NY; Michael, Joseph Darryl [Delmar, NY

2011-11-15

A method for fabricating a component is disclosed. The method includes: providing a member having an effective work function of an initial value, disposing a sacrificial layer on a surface of the member, disposing a first agent within the member to obtain a predetermined concentration of the agent at said surface of the member, annealing the member, and removing the sacrificial layer to expose said surface of the member, wherein said surface has a post-process effective work function that is different from the initial value.

Effect of Post-HALT Annealing on Leakage Currents in Solid Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2010-01-01

Degradation of leakage currents is often observed during life testing of tantalum capacitors and is sometimes attributed to the field-induced crystallization in amorphous anodic tantalum pentoxide dielectrics. However, degradation of leakage currents and the possibility of annealing of degraded capacitors have not been investigated yet. In this work the effect of annealing after highly accelerated life testing (HALT) on leakage currents in various types of solid tantalum capacitors was analyzed. Variations of leakage currents with time during annealing at temperatures from 125 oC to 180 oC, thermally stimulated depolarization (TSD) currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. Annealing resulted in a gradual decrease of leakage currents and restored their initial values. Repeat HALT after annealing resulted in reproducible degradation of leakage currents. The observed results are explained based on ionic charge instability (drift/diffusion of oxygen vacancies) in the tantalum pentoxide dielectrics using a modified Schottky conduction mechanism.

Post-Annealing Effects on Surface Morphological, Electrical and Optical Properties of Nanostructured Cr-Doped CdO Thin Films

NASA Astrophysics Data System (ADS)

Hymavathi, B.; Rajesh Kumar, B.; Subba Rao, T.

2018-01-01

Nanostructured Cr-doped CdO thin films were deposited on glass substrates by reactive direct current magnetron sputtering and post-annealed in vacuum from 200°C to 500°C. X-ray diffraction studies confirmed that the films exhibit cubic nature with preferential orientation along the (111) plane. The crystallite size, lattice parameters, unit cell volume and strain in the films were determined from x-ray diffraction analysis. The surface morphology of the films has been characterized by field emission scanning electron microscopy and atomic force microscopy. The electrical properties of the Cr-doped CdO thin films were measured by using a four-probe method and Hall effect system. The lowest electrical resistivity of 2.20 × 10-4 Ω cm and a maximum optical transmittance of 88% have been obtained for the thin films annealed at 500°C. The optical band gap of the films decreased from 2.77 eV to 2.65 eV with the increase of annealing temperature. The optical constants, packing density and porosity of Cr-doped CdO thin films were also evaluated from the transmittance spectra.

Ferromagnetic cobalt nanocrystals achieved by soft annealing approach—From individual behavior to mesoscopic organized properties

NASA Astrophysics Data System (ADS)

Petit, C.; Wang, Z. L.; Pileni, M. P.

2007-05-01

By gentle annealing, 7 nm cobalt nanoparticles synthesized by soft chemistry, are transformed to hard magnetic hexagonal close packed (HCP) cobalt nanocrystals without changing the size, size distribution and passivating layer. This method permits to recover the nanocrystals isolated in solution after the annealing process and then to study the magnetic properties of the HCP cobalt nanocrystals at isolated status or in a self-organized film. Monolayer self-assembly of the HCP cobalt nanocrystals is obtained, and due to the dipolar interaction, ferromagnetic behavior close to room temperature has been observed. The magnetic properties differ significantly due to the influence of the substrate on the annealing process. This different approach of the annealing process of nanocrystals is compared to the classical approach of annealing in which the nanocrystals are first deposited on a substrate and then annealed.

Rapid, cool sintering of wet processed yttria-stabilized zirconia ceramic electrolyte thin films.

PubMed

Park, Jun-Sik; Kim, Dug-Joong; Chung, Wan-Ho; Lim, Yonghyun; Kim, Hak-Sung; Kim, Young-Beom

2017-09-29

Here we report a photonic annealing process for yttria-stabilized zirconia films, which are one of the most well-known solid-state electrolytes for solid oxide fuel cells (SOFCs). Precursor films were coated using a wet-chemical method with a simple metal-organic precursor solution and directly annealed at standard pressure and temperature by two cycles of xenon flash lamp irradiation. The residual organics were almost completely decomposed in the first pre-annealing step, and the fluorite crystalline phases and good ionic conductivity were developed during the second annealing step. These films showed properties comparable to those of thermally annealed films. This process is much faster than conventional annealing processes (e.g. halogen furnaces); a few seconds compared to tens of hours, respectively. The significance of this work includes the treatment of solid-state electrolyte oxides for SOFCs and the demonstration of the feasibility of other oxide components for solid-state energy devices.

Influence of low-temperature annealing time on the evolution of the structure and mechanical properties of a titanium Ti-Al-V alloy in the submicrocrystalline state

NASA Astrophysics Data System (ADS)

Ratochka, I. V.; Lykova, O. N.; Naidenkin, E. V.

2015-03-01

The effect of annealing at 673 K for 6-24 h on the structural and phase state and mechanical properties of the titanium alloy of a Ti-Al-V system that was previously subjected to severe plastic deformation by uniform compression deformation, has been studied. It has been established that these annealings lead to a nonmontonic dependence of the mechanical properties of the alloy on the annealing time. It has been shown that the annealing of the Ti-Al-V alloy in a submicrocrystalline state is accompanied by simultaneous hardening processes, i.e., the formation of fine particles during phase transformations and the formation of new nanosized grains, and softening processes, i.e., recovery processes and the growth grains to micron sizes. The prevalence of a given process during annealing determines the deterioration or improvement of the alloy's mechanical properties.

Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques

NASA Astrophysics Data System (ADS)

López-Escalante, M. C.; Ściana, B.; Dawidowski, W.; Bielak, K.; Gabás, M.

2018-03-01

This work presents the results of X-ray photoelectron spectroscopy studies on the bonding N configuration in InGaAsN epilayers grown by atmospheric pressure metal organic vapour phase epitaxy. Growth temperature has been tuned in order to obtain both, relaxed and strained layers. The studies were concentrated on analysing the influence of the growth temperature, post growth thermal annealing process and surface quality on the formation of Ga-N and In-N bonds as well as N-related defects. The contamination of InGaAsN films by growth precursor residues and oxides has also been addressed. The growth temperature stands out as a decisive factor boosting In-N bonds formation, while the thermal annealing seems to affect the N-related defects density in the layers.

Ion implantation damage, annealing and dopant activation in epitaxial gallium nitride

NASA Astrophysics Data System (ADS)

Suvkhanov, Agajan

2001-07-01

Successful n- and p-doping of GaN is an extremely important technological problem. More recently, ion implantation has been used to achieve both n- and p-type GaN. The ion implantation process is accompanied by the presence of radiation defects as the result of the ion-solid interactions. The temperatures (above 1000°C) required for recovery of the implantation induced damage and dopant activation strongly affect the GaN's surface integrity due to the significant nitrogen vapor pressure. Preservation of the surface integrity of GaN during high temperature post-implantation annealing is one of the key issues in the fabrication of GaN-based light-emitting devices. The radiation damage build-up in the implanted GaN layers has been investigated as a function of ion dose and the substrate's temperature. Results of measurements of structural damage by the Rutherford backscattering/Channeling (RBS/C) and the spectroscopic ellipsometry (SE) techniques have demonstrated the complex nature of the damage build-up. Analysis of GaN implanted at high temperature has demonstrated the presence of competing processes of layer-by-layer damage build-up and defect annihilation. Using a capping layer and annealing in a sealed quartz capsule filled with dry nitrogen can preserve the integrity of the GaN's surface. In this work the ion-implanted GaN samples were capped with 40 run MOCVD (Metal Organic Chemical Vapor Deposition) grown AlN film prior to annealing. The results of this work showed the advantage of high-temperature annealing of implanted GaN in a quartz capsule with nitrogen ambient, as compared with annealing in argon and nitrogen gas flow. Partial to complete decomposition of the AlN cap and underlying GaN has been observed by RBS/C and SEM (Scanning electron microscopy) for the samples annealed in flowing argon, as well as for the samples processed in flowing nitrogen. Encapsulation with nitrogen overpressure prevented the decomposition of the AlN capping film and the GaN crystal, and made it possible to achieve optical activation of the implanted Mg + and Si+ ions. PL measurements at 16 K of GaN samples implanted with Mg+ and annealed in a capsule showed three relatively strong peaks at 211, 303, and 395 meV from the band-edge emission. The relative intensity of the "yellow" band emission (i.e. defect band) was several times lower in the case of annealing in a sealed capsule as compared to that of open anneals in flowing argon or nitrogen. A separate set of specially-grown GaN samples was used for low temperature (1.8 K) PL analysis of the activation properties of Mg+-implanted and Mg+/P+-implanted samples. The samples were annealed in Rapid thermal processor (RTP) at 1300°C for 10 s with AlON encapsulation in flowing N2. The Mg+ implants showed good optical activation, producing a dose-correlated acceptor bound exciton peak with 12.2 meV localization energy, and donor-to-acceptor and band-to-acceptor peaks at 3.270 and 3.284 eV, respectively. The spectroscopic Mg acceptor binding energy was found to be 224 meV. A broad peak at 2.35 eV is attributed to implantation-induced defects stable in p-type material.

Thermal stability of atomic layer deposition Al2O3 film on HgCdTe

NASA Astrophysics Data System (ADS)

Zhang, P.; Sun, C. H.; Zhang, Y.; Chen, X.; He, K.; Chen, Y. Y.; Ye, Z. H.

2015-06-01

Thermal stability of Atomic Layer Deposition Al2O3 film on HgCdTe was investigated by Al2O3 film post-deposition annealing treatment and Metal-Insulator-Semiconductor device low-temperature baking treatment. The effectiveness of Al2O3 film was evaluated by measuring the minority carrier lifetime and capacitance versus voltage characteristics. After annealing treatment, the minority carrier lifetime of the HgCdTe sample presented a slight decrease. Furthermore, the fixed charge density and the slow charge density decreased significantly in the annealed MIS device. After baking treatment, the fixed charge density and the slow charge density of the unannealed and annealed MIS devices decreased and increased, respectively.

Effect of In Situ Annealing Treatment on the Mobility and Morphology of TIPS-Pentacene-Based Organic Field-Effect Transistors.

PubMed

Yang, Fuqiang; Wang, Xiaolin; Fan, Huidong; Tang, Ying; Yang, Jianjun; Yu, Junsheng

2017-08-23

In this work, organic field-effect transistors (OFETs) with a bottom gate top contact structure were fabricated by using a spray-coating method, and the influence of in situ annealing treatment on the OFET performance was investigated. Compared to the conventional post-annealing method, the field-effect mobility of OFET with 60 °C in situ annealing treatment was enhanced nearly four times from 0.056 to 0.191 cm 2 /Vs. The surface morphologies and the crystallization of TIPS-pentacene films were characterized by optical microscope, atomic force microscope, and X-ray diffraction. We found that the increased mobility was mainly attributed to the improved crystallization and highly ordered TIPS-pentacene molecules.

Effect of In Situ Annealing Treatment on the Mobility and Morphology of TIPS-Pentacene-Based Organic Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Yang, Fuqiang; Wang, Xiaolin; Fan, Huidong; Tang, Ying; Yang, Jianjun; Yu, Junsheng

2017-08-01

In this work, organic field-effect transistors (OFETs) with a bottom gate top contact structure were fabricated by using a spray-coating method, and the influence of in situ annealing treatment on the OFET performance was investigated. Compared to the conventional post-annealing method, the field-effect mobility of OFET with 60 °C in situ annealing treatment was enhanced nearly four times from 0.056 to 0.191 cm2/Vs. The surface morphologies and the crystallization of TIPS-pentacene films were characterized by optical microscope, atomic force microscope, and X-ray diffraction. We found that the increased mobility was mainly attributed to the improved crystallization and highly ordered TIPS-pentacene molecules.

Precise control of photoinduced birefringence in azobenzene-containing liquid-crystalline polymers by post functionalization.

PubMed

Yu, Haifeng; Kobayashi, Takaomi; Ge, Ziyi

2009-10-19

A series of functionalized liquid-crystalline polymer materials with different degrees of functionality was synthesized by a post Sonogashira cross-coupling reaction of a polymer precursor. The post-functionalization was carried out under mild conditions and showed a high yield. Although a highly birefringent azotolane group was introduced into the polymer precursor, the photoresponse of the functionalized liquid-crystalline materials was not obviously changed. By adjusting the content of azotolane groups, precise control of the photoinduced birefringence was successfully obtained after thermal enhancement upon annealing. The present method to gain precise control of photoinduced birefringence might enable one to finely photocontrol the optical performances of materials, and may have a potential application as an advanced process for photonic materials. Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

On the formation and stability of nanometer scale precipitates in ferritic alloys during processing and high temperature service

NASA Astrophysics Data System (ADS)

Alinger, Matthew J.

Iron powders containing ≈14wt%Cr and smaller amounts of W and Ti were mechanically alloyed (MA) by ball milling with Y2O3 and subsequently either hot consolidated by hot extrusion or isostatic pressing, or powder annealed, producing very high densities of nm-scale coherent transition phase precipitates, or Y-Ti-O nano-clusters (NCs), along with fine-scale grains. These so-called nanostructured ferritic alloys (NFAs) manifest very high strength (static and creep) and corrosion-oxidation resistance up to temperatures in excess of 800°C. We used a carefully designed matrix of model MA powders and consolidated alloys to systematically assess the NC evolutions during each processing step, and to explore the combined effects of alloy composition and a number of processing variables, including the milling energy, consolidation method and the time and temperature of annealing of the as-milled powders. The stability of the NCs was also characterized during high-temperate post-consolidation annealing of a commercial NFA, MA957. The micro-nanostructural evolutions, and their effects on the alloy strength, were characterized by a combination of techniques, including XRD, TEM, atom-probe tomography (APT) and positron annihilation spectroscopy (PAS). However, small angle neutron scattering (SANS) was the primary tool used to characterize the nm-scale precipitates. The effect of the micro-nanostructure on the alloy strength was assessed by microhardness measurements. The studies revealed the critical sequence-of-events in forming the NCs, involves dissolution of Y, Ti and O during ball milling. The supersaturated solutes then precipitate during hot consolidation or powder annealing. The precipitate volume fraction increases with both the milling energy and Ti additions at lower consolidation and annealing temperatures (850°C), and at higher processing temperatures (1150°C) both are needed to produce NCs. The non-equilibrium kinetics of NC formation are nucleation controlled and independent of time with an effective activation energy of ≈60 kJ/mole. High temperature precipitate coarsening and transformations to oxide phases show a high effective activation energy (≈880 kJ/mole) and have a time dependence characteristic of a dislocation pipe diffusion mechanism. The NCs act as weak to moderately strong (alpha = 0.1 to 0.5) obstacles that can be sheared by dislocations, where the obstacle strength increases with alpha ≈0.37log(r/2b).

Analysis of Al diffusion processes in TiN barrier layers for the application in silicon solar cell metallization

NASA Astrophysics Data System (ADS)

Kumm, J.; Samadi, H.; Chacko, R. V.; Hartmann, P.; Wolf, A.

2016-07-01

An evaporated Al layer is known as an excellent rear metallization for highly efficient solar cells, but suffers from incompatibility with a common solder process. To enable solar cell-interconnection and module integration, in this work the Al layer is complemented with a solder stack of TiN/Ti/Ag or TiN/NiV/Ag, in which the TiN layer acts as an Al diffusion barrier. X-ray photoelectron spectroscopy measurements prove that diffusion of Al through the stack and the formation of an Al2O3 layer on the stack's surface are responsible for a loss of solderability after a strong post-metallization anneal, which is often mandatory to improve contact resistance and passivation quality. An optimization of the reactive TiN sputter process results in a densification of the TiN layer, which improves its barrier quality against Al diffusion. However, measurements with X-ray diffraction and scanning electron microscopy show that small grains with vertical grain boundaries persist, which still offer fast diffusion paths. Therefore, the concept of stuffing is introduced. By incorporating oxygen into the grain boundaries of the sputtered TiN layer, Al diffusion is strongly reduced as confirmed by secondary ion mass spectroscopy profiles. A quantitative analysis reveals a one order of magnitude lower Al diffusion coefficient for stuffed TiN layers. This metallization system maintains its solderability even after strong post-metallization annealing at 425 °C for 15 min. This paper thus presents an industrially feasible, conventionally solderable, and long-term stable metallization scheme for highly efficient silicon solar cells.

Annealing effects on capacitance-voltage characteristics of a-Si/SiN(x) multilayer prepared using hot-wire chemical vapour deposition.

PubMed

Panchal, A K; Rai, D K; Solanki, C S

2011-04-01

Post-deposition annealing of a-Si/SiN(x) multilayer films at different temperature shows varying shift in high frequency (1 MHz) capacitance-voltage (HFCV) characteristics. Various a-Si/SiN(x) multilayer films were deposited using hot wire chemical vapor deposition (HWCVD) and annealed in the temperature range of 800 to 900 degrees C to precipitate Si quantum dots (Si-QD) in a-Si layers. HFCV measurements of the as-deposited and annealed films in metal-insulator-semiconductor (MIS) structures show hysterisis in C-V curves. The hysteresis in the as-deposited films and annealed films is attributed to charge trapping in Si-dangling bonds in a-Si layer and in Si-QD respectively. The charge trapping density in Si-QD increases with temperature while the interface defects density (D(it)) remains constant.

Preparation of nitrogen-doped graphene/activated carbon composite papers to enhance energy storage in supercapacitors

NASA Astrophysics Data System (ADS)

Li, Yong-feng; Liu, Yan-zhen; Liang, Yu; Guo, Xiao-hui; Chen, Cheng-meng

2017-09-01

This report presents a facile and effective method to synthesize freestanding nitrogen-doped reduced graphene oxide (rGO)/activated carbon (AC) composite papers for supercapacitors by a method combining vacuum filtration with post-annealing in NH3 atmosphere. The effect of activated carbon contents on the microstructure and capacitive behavior of the resulting composite papers before and after the annealing was investigated by X-ray diffraction, scanning electron microscopy, and Raman and X-ray photoelectron spectroscopy. Results show that the composite paper with a 30% activated carbon loading has a high nitrogen content of 14.6 at% and superior capacitive performance (308 F/g, 1 A/g) to the other composite papers with various activated carbon loadings. Nitrogen was doped and GO reduced during the annealing. The rGO nanosheets acted as a framework, and the AC particles served as spacers to avoid agglomeration of graphene sheets. The high capacitance of the composite paper is ascribed to the electric double-layer behavior and the reversible redox reactions of the nitrogen and oxygen groups. The entire process is simple, environmental friendly and easily scalable for mass production.

Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices.

PubMed

Batra, Nitin M; Patole, Shashikant P; Abdelkader, Ahmed; Anjum, Dalaver H; Deepak, Francis L; Costa, Pedro M F J

2015-11-06

The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode-interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode-nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

Comparative study of post-growth annealing of Cu(hfac)2, Co2(CO)8 and Me2Au(acac) metal precursors deposited by FEBID.

PubMed

Puydinger Dos Santos, Marcos Vinicius; Szkudlarek, Aleksandra; Rydosz, Artur; Guerra-Nuñez, Carlos; Béron, Fanny; Pirota, Kleber Roberto; Moshkalev, Stanislav; Diniz, José Alexandre; Utke, Ivo

2018-01-01

Non-noble metals, such as Cu and Co, as well as noble metals, such as Au, can be used in a number modern technological applications, which include advanced scanning-probe systems, magnetic memory and storage, ferroelectric tunnel junction memristors, metal interconnects for high performance integrated circuits in microelectronics and nano-optics applications, especially in the areas of plasmonics and metamaterials. Focused-electron-beam-induced deposition (FEBID) is a maskless direct-write tool capable of defining 3-dimensional metal deposits at nanometre scale for above applications. However, codeposition of organic ligands when using organometallic precursors is a typical problem that limits FEBID of pure metal nanostructures. In this work, we present a comparative study using a post-growth annealing protocol at 100, 200, and 300 °C under high vacuum on deposits obtained from Co 2 (CO) 8 , Cu(II)(hfac) 2 , and Me 2 Au(acac) to study improvements on composition and electrical conductivity. Although the as-deposited material was similar for all precursors, metal grains embedded in a carbonaceous matrix, the post-growth annealing results differed. Cu-containing deposits showed the formation of pure Cu nanocrystals at the outer surface of the initial deposit for temperatures above 100 °C, due to the migration of Cu atoms from the carbonaceous matrix containing carbon, oxygen, and fluorine atoms. The average size of the Cu crystals doubles between 100 and 300 °C of annealing temperature, while the composition remains constant. In contrast, for Co-containing deposits oxygen release was observed upon annealing, while the carbon content remained approximately constant; the cobalt atoms coalesced to form a metallic film. The as-deposited Au-containing material shows subnanometric grains that coalesce at 100 °C, maintaining the same average size at annealing temperatures up to 300 °C. Raman analysis suggests that the amorphous carbonaceous matrix of the as-written Co, Cu and Au deposits turned into nanocrystalline graphite with comparable crystal sizes of 12-14 nm at 300 °C annealing temperature. However, we observed a more effective formation of graphite clusters in Co- than in Cu- and Au-containing deposits. The graphitisation has a minor influence on the electrical conductivity improvements of Co-C deposits, which is attributed to the high as-deposited Co content and the related metal grain percolation. On the contrary, electrical conductivity improvements by factors of 30 and 12 for, respectively, Cu-C and Au-C deposits with low metal content are mainly attributed to the graphitisation. This relatively simple vacuum-based post-growth annealing protocol may be useful for other precursors as it proved to be efficient in reliably tuning the electrical properties of as-deposited FEBID materials. Finally, a H 2 -assisted gold purification protocol is demonstrated at temperatures around 300 °C by fully removing the carbon matrix and drastically reducing the electrical resistance of the deposit.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doualle, T.; Gallais, L., E-mail: laurent.gallais@fresnel.fr; Cormont, P.

We investigate the effect of different heat treatments on the laser-induced damage probabilities of fused silica samples. Isothermal annealing in a furnace is applied, with different temperatures in the range 700–1100 °C and 12 h annealing time, to super-polished fused silica samples. The surface flatness and laser damage probabilities at 3 ns, 351 nm are measured before and after the different annealing procedures. We have found a significant improvement of the initial laser damage probabilities of the silica surface after annealing at 1050 °C for 12 h. A similar study has been conducted on CO{sub 2} laser-processed sites on the surface of the samples. Before andmore » after annealing, we have studied the morphology of the sites, the evolution of residual stress, and the laser-induced damage threshold measured at 351 nm, 3 ns. In this case, we observe that the laser damage resistance of the laser created craters can reach the damage level of the bare fused silica surface after the annealing process, with a complete stress relieve. The obtained results are then compared to the case of local annealing process by CO{sub 2} laser irradiation during 1 s, and we found similar improvements in both cases. The different results obtained in the study are compared to numerical simulations made with a thermo-mechanical model based on finite-element method that allows the simulation of the isothermal or the local annealing process, the evolution of stress and fictive temperature. The simulation results were found to be very consistent with experimental observations for the stresses evolution after annealing and estimation of the heat affected area during laser-processing based on the density dependence with fictive temperature. Following this work, the temperature for local annealing should reach 1330–1470 °C for an optimized reduction of damage probability and be below the threshold for material removal, whereas furnace annealing should be kept below the annealing point to avoid sample deformation.« less

Effects of V addition on recrystallization resistance of 7150 aluminum alloy after simulative hot deformation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lai, Jing; Shi, Cangji; Chen, X.-Grant, E-mail: xgrant_chen@uqac.ca

2014-10-15

The effects of different V contents (0.01 to 0.19 wt.%) on the recrystallization resistance of 7150 aluminum alloys during post-deformation heat treatment were investigated. The microstructural evolutions at as-cast, as-homogenized conditions and after post-deformation annealing were studied using optical, scanning electron and transmission electron microscopes and using the electron backscattered diffraction technique. The precipitation of Al{sub 21}V{sub 2} dispersoids was observed in alloys containing 0.11 to 0.19 wt.% V after homogenization. The dispersoids were mainly distributed in the dendrite cells, and the precipitate-free zones occurred in the interdendritic regions and near grain boundaries. V addition could significantly enhance the recrystallizationmore » resistance during post-deformation annealing, particularly in the presence of a great number of Al{sub 21}V{sub 2} dispersoids. Recrystallized grain growth was effectively restricted because of the dispersoid pinning effect. The alloy containing 0.15 wt.% V exhibited the highest recrystallization resistance amongst all V-containing alloys studied. - Highlights: • Investigated the effect of V level on microstructure and flow stress of 7150 alloys • Characterized microstructures using optical microscopy, SEM, TEM and EBSD • Described the precipitation behavior of V-dispersoids in the dendritic structure • Studied the V effect on recrystallization resistance during post heat treatment • V addition greatly enhanced the recrystallization resistance during annealing.« less

Optimal design of minimum mean-square error noise reduction algorithms using the simulated annealing technique.

PubMed

Bai, Mingsian R; Hsieh, Ping-Ju; Hur, Kur-Nan

2009-02-01

The performance of the minimum mean-square error noise reduction (MMSE-NR) algorithm in conjunction with time-recursive averaging (TRA) for noise estimation is found to be very sensitive to the choice of two recursion parameters. To address this problem in a more systematic manner, this paper proposes an optimization method to efficiently search the optimal parameters of the MMSE-TRA-NR algorithms. The objective function is based on a regression model, whereas the optimization process is carried out with the simulated annealing algorithm that is well suited for problems with many local optima. Another NR algorithm proposed in the paper employs linear prediction coding as a preprocessor for extracting the correlated portion of human speech. Objective and subjective tests were undertaken to compare the optimized MMSE-TRA-NR algorithm with several conventional NR algorithms. The results of subjective tests were processed by using analysis of variance to justify the statistic significance. A post hoc test, Tukey's Honestly Significant Difference, was conducted to further assess the pairwise difference between the NR algorithms.

Glass transition dynamics of stacked thin polymer films

NASA Astrophysics Data System (ADS)

Fukao, Koji; Terasawa, Takehide; Oda, Yuto; Nakamura, Kenji; Tahara, Daisuke

2011-10-01

The glass transition dynamics of stacked thin films of polystyrene and poly(2-chlorostyrene) were investigated using differential scanning calorimetry and dielectric relaxation spectroscopy. The glass transition temperature Tg of as-stacked thin polystyrene films has a strong depression from that of the bulk samples. However, after annealing at high temperatures above Tg, the stacked thin films exhibit glass transition at a temperature almost equal to the Tg of the bulk system. The α-process dynamics of stacked thin films of poly(2-chlorostyrene) show a time evolution from single-thin-film-like dynamics to bulk-like dynamics during the isothermal annealing process. The relaxation rate of the α process becomes smaller with increase in the annealing time. The time scale for the evolution of the α dynamics during the annealing process is very long compared with that for the reptation dynamics. At the same time, the temperature dependence of the relaxation time for the α process changes from Arrhenius-like to Vogel-Fulcher-Tammann dependence with increase of the annealing time. The fragility index increases and the distribution of the α-relaxation times becomes smaller with increase in the annealing time for isothermal annealing. The observed change in the α process is discussed with respect to the interfacial interaction between the thin layers of stacked thin polymer films.

Very thick mixture oxide ion beam sputtering films for investigation of nonlinear material properties

NASA Astrophysics Data System (ADS)

Steinecke, Morten; Kiedrowski, Kevin; Jupé, Marco; Ristau, Detlev

2017-11-01

Currently, optical coating technology is facing a multitude of new challenges. Some of the new requirements are addressed to the spectral behavior of complex coatings, but in addition, the power handling capabilities gain in importance. Often, both demands are combined in the same component, for example in chirped mirrors for ultra-short pulse applications. The consequent demands on the accuracy of the layer thicknesses and the stability of the refractive indices require a deposition by sputtering processes. For high end components, Ion Beam Sputtering (IBS) is often the method of choice. Utilizing the Co-sputtering technique, IBS additionally allows a higher flexibility in the possible coating materials by mixing two pure oxides into one ternary composite material. These composite materials are also advantageous for researching third order nonlinear effects, which can limit the functionality of optics at high powers. The layer thicknesses required for this fundamental research often exceed 100 µm, which therefore makes low stress and absorption in the layer materials mandatory. A reduction of these decisive properties can be achieved by a thermal treatment of the sample. Usually, this is performed by a post-deposition annealing. Alternatively, the coating temperature can be increased. This is rarely done for IBS processes, but it can be assumed, that the effect is comparable to that of ex-situ annealing. In this work, different ternary mixtures of Al2O3/SiO2, HfO2/Al2O3 as well as Nb2O5/Al2O3 were investigated for their layer stress and absorption, applying both, in-situ temperature treatment as well as post manufacturing annealing. It is observed that suitable thermal treatment as well as material composition can significantly reduce layer stress and absorption in the deposited layer. This enabled the manufacturing of layers with thicknesses of over 180 µm as well as the measurement of nonlinear properties of the deposited materials. Contribution to the topical issue "Plasma Sources and Plasma Processes (PSPP)", edited by Luis Lemos Alves, Thierry Belmonte and Tiberiu Minea

Enhancing performance and uniformity of CH3NH3PbI3-xClx perovskite solar cells by air-heated-oven assisted annealing under various humidities

NASA Astrophysics Data System (ADS)

Zhou, Qing; Jin, Zhiwen; Li, Hui; Wang, Jizheng

2016-02-01

To fabricate high-performance metal-halide perovskite solar cells, a thermal annealing process is indispensable in preparing high quality perovskite film. And usually such annealing is performed on hot plate. However hot-plate annealing could cause problems such as inhomogeneous heating (induced by non-tight contact between the sample and the plate), it is also not fit for large scale manufactory. In this paper, we conduct the annealing process in air-heated oven under various humidity environments, and compared the resulted films (CH3NH3PbI3-xClx) and devices (Al/PC61BM/CH3NH3PbI3-xClx/PEDOT:PSS/ITO/glass) with that obtained via hot-plate annealing. It is found that the air-heated-oven annealing is superior to the hot-plate annealing: the annealing time is shorter, the films are more uniform, and the devices exhibit higher power conversion efficiency and better uniformity. The highest efficiencies achieved for the oven and hot-plate annealing processes are 14.9% and 13.5%, and the corresponding standard deviations are 0.5% and 0.8%, respectively. Our work here indicates that air-heated-oven annealing could be a more reliable and more efficient way for both lab research and large-scale production.

Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.

PubMed

Chen, Hong-Chih; Chang, Ting-Chang; Lai, Wei-Chih; Chen, Guan-Fu; Chen, Bo-Wei; Hung, Yu-Ju; Chang, Kuo-Jui; Cheng, Kai-Chung; Huang, Chen-Shuo; Chen, Kuo-Kuang; Lu, Hsueh-Hsing; Lin, Yu-Hsin

2018-02-26

This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

Formation of a Polycrystalline Silicon Thin Film by Using Blue Laser Diode Annealing

NASA Astrophysics Data System (ADS)

Choi, Young-Hwan; Ryu, Han-Youl

2018-04-01

We report the crystallization of an amorphous silicon thin film deposited on a SiO2/Si wafer using an annealing process with a high-power blue laser diode (LD). The laser annealing process was performed using a continuous-wave blue LD of 450 nm in wavelength with varying laser output power in a nitrogen atmosphere. The crystallinity of the annealed poly-silicon films was investigated using ellipsometry, electron microscope observation, X-ray diffraction, and Raman spectroscopy. Polysilicon grains with > 100-nm diameter were observed to be formed after the blue LD annealing. The crystal quality was found to be improved as the laser power was increased up to 4 W. The demonstrated blue LD annealing is expected to provide a low-cost and versatile solution for lowtemperature poly-silicon processes.

Rapid curing of solution-processed zinc oxide films by pulse-light annealing for thin-film transistor applications

NASA Astrophysics Data System (ADS)

Kim, Dong Wook; Park, Jaehoon; Hwang, Jaeeun; Kim, Hong Doo; Ryu, Jin Hwa; Lee, Kang Bok; Baek, Kyu Ha; Do, Lee-Mi; Choi, Jong Sun

2015-01-01

In this study, a pulse-light annealing method is proposed for the rapid fabrication of solution-processed zinc oxide (ZnO) thinfilm transistors (TFTs). Transistors that were fabricated by the pulse-light annealing method, with the annealing being carried out at 90℃ for 15 s, exhibited a mobility of 0.05 cm2/Vs and an on/off current ratio of 106. Such electrical properties are quite close to those of devices that are thermally annealed at 165℃ for 40 min. X-ray photoelectron spectroscopy analysis of ZnO films showed that the activation energy required to form a Zn-O bond is entirely supplied within 15 s of pulse-light exposure. We conclude that the pulse-light annealing method is viable for rapidly curing solution-processable oxide semiconductors for TFT applications.

Implant Monitoring Measurements On Ultra Shallow Implants Before And After Anneal Using Photomodulated Reflection And Junction Photovoltage Measurement Techniques

NASA Astrophysics Data System (ADS)

Tallian, M.; Pap, A.; Mocsar, K.; Somogyi, A.; Nadudvari, Gy.; Kosztka, D.; Pavelka, T.

2011-01-01

Ultra shallow junctions are becoming widely used in the micro- and nanoelectronic devices, and novel measurement methods are needed to monitor the manufacturing processes. Photomodulated Reflection measurements before anneal and Junction Photovoltage-based sheet resistance measurements after anneal are non-contact, nondestructive techniques suitable for characterizing both the implantation and the annealing process. Tests verify that these methods are consistent with each other and by using them together, defects originating in the implantation and anneal steps can be separated.

Effects of neutron irradiation on carbon doped MgB2 wire segments

NASA Astrophysics Data System (ADS)

Wilke, R. H. T.; Bud'ko, S. L.; Canfield, P. C.; Finnemore, D. K.; Suplinskas, Raymond J.; Farmer, J.; Hannahs, S. T.

2006-06-01

We have studied the evolution of superconducting and normal state properties of neutron irradiated Mg(B0.962C0.038)2 wire segments as a function of post-exposure annealing time and temperature. The initial fluence fully suppressed superconductivity and resulted in an anisotropic expansion of the unit cell. Superconductivity was restored by post-exposure annealing. The upper critical field, Hc2(T = 0), approximately scales with Tc, starting with an undamaged Tc near 37 K and Hc2(T = 0) near 32 T. Up to an annealing temperature of 400 °C the recovery of Tc tends to coincide with a decrease in the normal state resistivity and a systematic recovery of the lattice parameters. Above 400 °C a decrease in ordering along the c-direction coincides with an increase in resistivity, but no apparent change in the evolution of Tc and Hc2. To a first order approximation, it appears that carbon doping and neutron damage affect the superconducting properties of MgB2 independently.

First principles study of the effect of hydrogen annealing on SiC MOSFETs

NASA Astrophysics Data System (ADS)

Chokawa, Kenta; Shiraishi, Kenji

2018-04-01

The high interfacial defect density at SiC/SiO2 interfaces formed by thermal oxidation is a crucial problem. Although post-oxidation annealing with H2 can reduce the defect density, some defects still remain at the interface. We investigate the termination of vacancy defects by H atoms at the 4H-SiC(0001)/SiO2 interface and discuss the stability of these H termination structures. Si vacancy defects can be terminated with H atoms to reduce the defect density, and the termination structure is stable even at high temperatures. On the other hand, it is difficult to terminate C vacancy defects with H atoms because the H atoms desorb from the dangling bonds and form H2 molecules below room temperature. However, we confirm that N atoms are effective for reducing the C vacancy defect states. Therefore, a defect-less interface can be achieved by post-oxidation annealing with H2 and N2.

Electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces as dependent on MBE growth conditions and ex situ annealing

NASA Astrophysics Data System (ADS)

Komissarova, T. A.; Lebedev, M. V.; Sorokin, S. V.; Klimko, G. V.; Sedova, I. V.; Gronin, S. V.; Komissarov, K. A.; Calvet, W.; Drozdov, M. N.; Ivanov, S. V.

2017-04-01

A study of electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces (HI) in dependence on molecular beam epitaxy (MBE) growth conditions and post-growth annealing was performed. Initial GaAs surface reconstructions ((2 × 4)As or c(4 × 4)As) and ZnSe growth mode (MBE or migration-enhanced epitaxy (MEE)) were varied for different undoped and n-doped heterovalent structures. Although all the structures have low extended defect density (less than 106 cm-2) and rather small (less than 5 nm) atomic interdiffusion at the HI, the structural, chemical and electronic properties of the near-interface area (short-distance interdiffusion effects, dominant chemical bonds, and valence band offset values) as well as electrical properties of the n-GaAs/n-ZnSe heterovalent structures were found to be influenced strongly by the MBE growth conditions and post-growth annealing.

Advantages of Unfair Quantum Ground-State Sampling.

PubMed

Zhang, Brian Hu; Wagenbreth, Gene; Martin-Mayor, Victor; Hen, Itay

2017-04-21

The debate around the potential superiority of quantum annealers over their classical counterparts has been ongoing since the inception of the field. Recent technological breakthroughs, which have led to the manufacture of experimental prototypes of quantum annealing optimizers with sizes approaching the practical regime, have reignited this discussion. However, the demonstration of quantum annealing speedups remains to this day an elusive albeit coveted goal. We examine the power of quantum annealers to provide a different type of quantum enhancement of practical relevance, namely, their ability to serve as useful samplers from the ground-state manifolds of combinatorial optimization problems. We study, both numerically by simulating stoquastic and non-stoquastic quantum annealing processes, and experimentally, using a prototypical quantum annealing processor, the ability of quantum annealers to sample the ground-states of spin glasses differently than thermal samplers. We demonstrate that (i) quantum annealers sample the ground-state manifolds of spin glasses very differently than thermal optimizers (ii) the nature of the quantum fluctuations driving the annealing process has a decisive effect on the final distribution, and (iii) the experimental quantum annealer samples ground-state manifolds significantly differently than thermal and ideal quantum annealers. We illustrate how quantum annealers may serve as powerful tools when complementing standard sampling algorithms.

Improved cost-effectiveness of the block co-polymer anneal process for DSA

NASA Astrophysics Data System (ADS)

Pathangi, Hari; Stokhof, Maarten; Knaepen, Werner; Vaid, Varun; Mallik, Arindam; Chan, Boon Teik; Vandenbroeck, Nadia; Maes, Jan Willem; Gronheid, Roel

2016-04-01

This manuscript first presents a cost model to compare the cost of ownership of DSA and SAQP for a typical front end of line (FEoL) line patterning exercise. Then, we proceed to a feasibility study of using a vertical furnace to batch anneal the block co-polymer for DSA applications. We show that the defect performance of such a batch anneal process is comparable to the process of record anneal methods. This helps in increasing the cost benefit for DSA compared to the conventional multiple patterning approaches.

Influences of annealing temperature on sprayed CuFeO2 thin films

NASA Astrophysics Data System (ADS)

Abdelwahab, H. M.; Ratep, A.; Abo Elsoud, A. M.; Boshta, M.; Osman, M. B. S.

2018-06-01

Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray pyrolysis technique. Post annealing under nitrogen atmosphere for 2 h was necessary to form delafossite CuFeO2 phase. The effect of alteration in annealing temperature (TA) 800, 850 and 900 °C was study on structural, morphology and optical properties. The XRD results for thin film annealed at TA = 850 °C show single phase CuFeO2 with rhombohedral crystal system and R 3 bar m space group with preferred orientation along (0 1 2). The prepared copper iron oxide thin films have an optical transmission ranged ∼40% in the visible region. The optical direct optical band gap of the prepared thin films was ranged ∼2.9 eV.

Upscaling high-quality CVD graphene devices to 100 micron-scale and beyond

NASA Astrophysics Data System (ADS)

Lyon, Timothy J.; Sichau, Jonas; Dorn, August; Zurutuza, Amaia; Pesquera, Amaia; Centeno, Alba; Blick, Robert H.

2017-03-01

We describe a method for transferring ultra large-scale chemical vapor deposition-grown graphene sheets. These samples can be fabricated as large as several cm2 and are characterized by magneto-transport measurements on SiO2 substrates. The process we have developed is highly effective and limits damage to the graphene all the way through metal liftoff, as shown in carrier mobility measurements and the observation of the quantum Hall effect. The charge-neutral point is shown to move drastically to near-zero gate voltage after a 2-step post-fabrication annealing process, which also allows for greatly diminished hysteresis.

Effects of annealing process on magnetic properties and structures of Nd-Pr-Ce-Fe-B melt-spun powders

NASA Astrophysics Data System (ADS)

Pei, Kun; Lin, Min; Yan, Aru; Zhang, Xing

2016-05-01

The effects of annealing process on magnetic properties and structures of Nd-Pr-Ce-Fe-B melt-spun powders have been investigated. The magnetic properties improve a lot when the annealing temperature is 590-650 °C and the annealing time exceeds 1 min. The magnetic properties is stable when the annealing time is 590-650 °C. The powders contains obvious grains when the annealing time is only 1 min, while the grains grow up obviously, leading to the decrease of Br and (BH)max, when the annealing time is more than 9 min. The Hcj changes little for different annealing time. The cooling rate also affects the magnetic properties of powders with different Ce-content. Faster cooling rate is favorable to improve magnetic properties with low Ce-content powders, while high Ce-content powders need slower cooling rate.

The annealing investigation on morphology and photoluminescence properties of In2O3 1-D nanostructures in resistive evaporation mechanism

NASA Astrophysics Data System (ADS)

Shariati, Mohsen; Ghafouri, Vahid

2014-02-01

Synthesis of In2O3 nanostructures grown on Si substrate by the resistive evaporation of metallic indium granules followed by dry oxidation process has been articulated. To prepare nucleation growth sites, selected samples pre-annealed around indium melting point in free-oxygen atmosphere and then to fabricate 1-D nanostructures, they annealed in a horizontal thermal furnace in presence of argon and oxygen. For comparison, one sample, the same origin as initially pre-annealed samples, was excluded in pre-annealing process but presented in annealing step. Characterization of the products with FESEM revealed that the pre-annealed obtained nanostructures are mostly nanorod and nanowire with different morphologies. For the comparative sample, no 1-D structures achieved. X-ray diffraction (XRD) patterns for pre-annealed samples indicated that they are crystalline and the comparative one is polycrystalline. Photoluminescence (PL) measurements carried out at room temperature revealed that emission band shifted to shorter wavelength from pre-annealed samples to comparative one.

Tuning of deep level emission in highly oriented electrodeposited ZnO nanorods by post growth annealing treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simimol, A.; Department of Physics, National Institute of Technology, Calicut 673601; Manikandanath, N. T.

Highly dense and c-axis oriented zinc oxide (ZnO) nanorods with hexagonal wurtzite facets were deposited on fluorine doped tin oxide coated glass substrates by a simple and cost-effective electrodeposition method at low bath temperature (80 °C). The as-grown samples were then annealed at various temperatures (T{sub A} = 100–500 °C) in different environments (e.g., zinc, oxygen, air, and vacuum) to understand their photoluminescence (PL) behavior in the ultra-violet (UV) and the visible regions. The PL results revealed that the as-deposited ZnO nanorods consisted of oxygen vacancy (V{sub O}), zinc interstitial (Zn{sub i}), and oxygen interstitial (O{sub i}) defects and these can be reduced significantlymore » by annealing in different environments at optimal annealing temperatures. However, the intensity of deep level emission increased for T{sub A} greater than the optimized values for the respective environments due to the introduction of various defect centers. For example, for T{sub A} ≥ 450 °C in the oxygen and air environments, the density of O{sub i} defects increased, whereas, the green emission associated with V{sub O} is dominant in the vacuum annealed (T{sub A} = 500 °C) ZnO nanorods. The UV peak red shifted after the post-growth annealing treatments in all the environments and the vacuum annealed sample exhibited highest UV peak intensity. The observations from the PL data are supported by the micro-Raman spectroscopy. The present study gives new insight into the origin of different defects that exist in the electrodeposited ZnO nanorods and how these defects can be precisely controlled in order to get the desired emissions for the opto-electronic applications.« less

Annealing-temperature-dependent voltage-sign reversal in all-oxide spin Seebeck devices using RuO2

NASA Astrophysics Data System (ADS)

Kirihara, Akihiro; Ishida, Masahiko; Yuge, Ryota; Ihara, Kazuki; Iwasaki, Yuma; Sawada, Ryohto; Someya, Hiroko; Iguchi, Ryo; Uchida, Ken-ichi; Saitoh, Eiji; Yorozu, Shinichi

2018-04-01

Thermoelectric converters based on the spin Seebeck effect (SSE) have attracted great attention due to their potential to offer novel applications such as energy harvesting and heat-flow sensing. For converting a SSE-induced spin current into an electric current, a transition metal film such as Pt, which exhibits large inverse spin-Hall effect (ISHE), has been typically used. In this work, we show an all-oxide SSE device using ruthenium oxide (RuO2) as a conductive film. We found that both the sign and magnitude of the SSE-induced ISHE voltage V appearing in the RuO2 film changes depending on the post annealing temperature, and that the magnitude can become larger than that of a standard SSE device using Pt. The similar sign change was also observed in Hall-resistance measurements of the RuO2 films. X-ray absorption fine structure (XAFS) spectra of as-deposited and annealed RuO2 revealed that the annealing process substantially improved the long-range crystalline order in RuO2. This suggests that change in the crystalline order may modify the dominant ISHE mechanism or electronic states in RuO2, leading to the sign reversal of V as well as the Hall coefficient. Our result demonstrates that RuO2 is an interesting material not only as a practical ISHE film but also as a testbed to study physics of spin-to-charge converters that depend on their crystalline order.

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes

PubMed Central

Hsu, Kai-Chiang; Hsiao, Wei-Hua; Lee, Ching-Ting; Chen, Yan-Ting; Liu, Day-Shan

2015-01-01

This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n-ZnO/p-GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The origins of the light emission for these LEDs annealed at various temperatures were studied using measurements of electrical property, photoluminescence, and Auger electron spectroscopy (AES) depth profiles. A blue-violet emission located at 430 nm was associated with intrinsic transitions between the bandgap of n-ZnO and p-GaN, the green-yellow emission at 550 nm mainly originating from the deep-level transitions of native defects in the n-ZnO and p-GaN surfaces, and the red emission at 610 nm emerging from the Ga-O interlayer due to interdiffusion at the n-ZnO/p-GaN interface. The above-mentioned emissions also supported the EL spectra of LEDs annealed at 700 °C under air, nitrogen, and oxygen atmospheres, respectively. PMID:28793675

Post-deposition annealing temperature dependence TiO{sub 2}-based EGFET pH sensor sensitivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zulkefle, M. A., E-mail: alhadizulkefle@gmail.com; Rahman, R. A., E-mail: rohanieza.abdrahman@gmail.com; Yusoff, K. A., E-mail: khairul.aimi.yusof@gmail.com

EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO{sub 2} sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO{sub 2} deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO{sub 2} thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFETmore » as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.« less

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes.

PubMed

Hsu, Kai-Chiang; Hsiao, Wei-Hua; Lee, Ching-Ting; Chen, Yan-Ting; Liu, Day-Shan

2015-11-16

This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n -ZnO/ p -GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The origins of the light emission for these LEDs annealed at various temperatures were studied using measurements of electrical property, photoluminescence, and Auger electron spectroscopy (AES) depth profiles. A blue-violet emission located at 430 nm was associated with intrinsic transitions between the bandgap of n -ZnO and p -GaN, the green-yellow emission at 550 nm mainly originating from the deep-level transitions of native defects in the n -ZnO and p -GaN surfaces, and the red emission at 610 nm emerging from the Ga-O interlayer due to interdiffusion at the n -ZnO/ p -GaN interface. The above-mentioned emissions also supported the EL spectra of LEDs annealed at 700 °C under air, nitrogen, and oxygen atmospheres, respectively.

Annealing effect of the InAs dot-in-well structure grown by MBE

NASA Astrophysics Data System (ADS)

Zhao, Xuyi; Wang, Peng; Cao, Chunfang; Yan, Jinyi; Zha, Fangxing; Wang, Hailong; Gong, Qian

2017-12-01

We have demonstrated that in situ annealing effect has to be taken into account in order to realize the 1.31 μm InAs quantum dot (QD) lasers with the dot-in-well (DWELL) structure. The photoluminescence (PL) properties have been investigated for the InAs DWELL samples annealed at different temperatures in situ, simulating the annealing process during the growth of the top cladding AlGaAs layer in the laser structure. The QDs with large size in the DWELL structure are vulnerable to the annealing process at temperatures above 550 °C, revealed by the drastic change in the PL spectra. However, the DWELL structure is stable during the annealing process at 540 °C for three hours. The thermal stability of the QDs in the DWELL structure has to be considered in the growth of QD lasers for long wavelength operation.

Growth, characterization and post-processing of inorganic and hybrid organic-inorganic thin films deposited using atomic and molecular layer deposition techniques

NASA Astrophysics Data System (ADS)

Abdulagatov, Aziz Ilmutdinovich

Atomic layer deposition (ALD) and molecular layer deposition (MLD) are advanced thin film coating techniques developed for deposition of inorganic and hybrid organic-inorganic films respectively. Decreasing device dimensions and increasing aspect ratios in semiconductor processing has motivated developments in ALD. The beginning of this thesis will cover study of new ALD chemistry for high dielectric constant Y 2O3. In addition, the feasibility of conducting low temperature ALD of TiN and TiAlN is explored using highly reactive hydrazine as a new nitrogen source. Developments of these ALD processes are important for the electronics industry. As the search for new materials with more advanced properties continues, attention has shifted toward exploring the synthesis of hierarchically nanostructured thin films. Such complex architectures can provide novel functions important to the development of state of the art devices for the electronics industry, catalysis, energy conversion and memory storage as a few examples. Therefore, the main focus of this thesis is on the growth, characterization, and post-processing of ALD and MLD films for fabrication of novel composite (nanostructured) thin films. Novel composite materials are created by annealing amorphous ALD oxide alloys in air and by heat treatment of hybrid organic-inorganic MLD films in inert atmosphere (pyrolysis). The synthesis of porous TiO2 or Al2O3 supported V2O5 for enhanced surface area catalysis was achieved by the annealing of inorganic TiVxOy and AlV xOy ALD films in air. The interplay between phase separation, surface energy difference, crystallization, and melting temperature of individual oxides were studied for their control of film morphology. In other work, a class of novel metal oxide-graphitic carbon composite thin films was produced by pyrolysis of MLD hybrid organic-inorganic films. For example, annealing in argon of titania based hybrid films enabled fabrication of thin films of intimately mixed TiO2 and nanographitized carbon. The graphitized carbon in the film was formed as a result of the removal of hydrogen by pyrolysis of the organic constituency of the MLD film. The presence of graphitic carbon allowed a 14 orders of magnitude increase in the electrical conductivity of the composite material compared fully oxidized rutile TiO 2.

Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots

NASA Astrophysics Data System (ADS)

Alireza, Samavati; Othaman, Z.; K. Ghoshal, S.; K. Mustafa, M.

2015-02-01

The influences of thermal annealing on the structural and optical features of radio frequency (rf) magnetron sputtered self-assembled Ge quantum dots (QDs) on Si (100) are investigated. Preferentially oriented structures of Ge along the (220) and (111) directions together with peak shift and reduced strain (4.9% to 2.7%) due to post-annealing at 650 °C are discerned from x-ray differaction (XRD) measurement. Atomic force microscopy (AFM) images for both pre-annealed and post-annealed (650 °C) samples reveal pyramidal-shaped QDs (density ˜ 0.26× 1011 cm-2) and dome-shape morphologies with relatively high density ˜ 0.92 × 1011 cm-2, respectively. This shape transformation is attributed to the mechanism of inter-diffusion of Si in Ge interfacial intermixing and strain non-uniformity. The annealing temperature assisted QDs structural evolution is explained using the theory of nucleation and growth kinetics where free energy minimization plays a pivotal role. The observed red-shift ˜ 0.05 eV in addition to the narrowing of the photoluminescence peaks results from thermal annealing, and is related to the effect of quantum confinement. Furthermore, the appearance of a blue-violet emission peak is ascribed to the recombination of the localized electrons in the Ge-QDs/SiO2 or GeOx and holes in the ground state of Ge dots. Raman spectra of both samples exhibit an intense Ge-Ge optical phonon mode which shifts towards higher frequency compared with those of the bulk counterpart. An experimental Raman profile is fitted to the models of phonon confinement and size distribution combined with phonon confinement to estimate the mean dot sizes. A correlation between thermal annealing and modifications of the structural and optical behavior of Ge QDs is established. Tunable growth of Ge QDs with superior properties suitable for optoelectronic applications is demonstrated. Project supported by Ibnu Sina Institute for Fundamental Science Study, Universiti Teknologi Malaysia through Vote Q.J130000.2526.02H94, O5 and Postdoctoral Research Grant.

Room temperature ferromagnetism in non-magnetic doped TiO2 nanoparticles

NASA Astrophysics Data System (ADS)

Gómez-Polo, C.; Larumbe, S.; Pastor, J. M.

2013-05-01

Room-temperature ferromagnetism in non-magnetic doped TiO2 semiconductor nanoparticles is analyzed in the present work. Undoped and N-doped TiO2 nanoparticles were obtained employing sol-gel procedure using urea as the nitrogen source. The obtained gels were first dried at 70 °C and afterwards calcined in air at 300 °C. A residual carbon concentration was retained in the samples as a consequence of the organic decomposition process. Post-annealing treatments at 300 °C under air and vacuum conditions were also performed. The crystallographic structure of nanoparticles was analyzed by X-ray diffraction, obtaining a single anatase crystalline phase after the calcinations (mean nanoparticle diameters around 5-8 nm). SQUID magnetometry was employed to analyze the magnetic response of the samples. Whereas for the undoped samples synthesized with hydrolysis rate h = 6, paramagnetic like behavior is observed at room temperature, the N-doped nanoparticles (h = 3) show a weak ferromagnetic response (saturation magnetization ≈10-3 emu/g). Moreover, a clear reinforcement of the room-temperature ferromagnetism response is found with the post-annealing treatments, in particular that performed in vacuum. Thus, the results indicate the dominant role of the oxygen stoichiometry and the oxygen vacancies in the room temperature ferromagnetic response of these TiO2 nanoparticles.

Synthesis and thermochromic property studies on W doped VO2 films fabricated by sol-gel method.

PubMed

Pan, Guoping; Yin, Jinhua; Ji, Keli; Li, Xiang; Cheng, Xingwang; Jin, Haibo; Liu, Jiping

2017-07-21

Tungsten-doped VO 2 thin films have been synthesized by a modified sol-gel process and followed by a post annealing. Vanadium pentoxide and tungstic acid as raw materials with the addition of hydrogen peroxide, concentrated hydrochloric acid (catalyst) and oxalic acid used as reducing agent were reacted in isobutanol. Finally, the uniform sol of vanadyl oxalate in isobutanol solvent was obtained as precursor. Detailed study suggested that W doped in VO 2 introduces additional electron carriers and induces the formation of V 3+ . Post annealing under vacuum promotes the releasing of chemical stress and generates oxygen vacancies in the samples. Temperature dependent transmittance study revealed that the releasing of chemical stress and deliberately introducing oxygen vacancies in W-doped VO 2 films have positive effects on enhancing its switching ability in the infrared transmittance as the metal-insulator transition (MIT) occurs. The largest switching of transmittance was obtained about 48% in the infrared range at 43 °C in 1.5%W doped VO 2 films, which is significantly larger than the reported ones. The findings in this work open a new way to synthesize the novel and thermochromic W doped VO 2 films with facility and low cost. Therefore, it has extensive application to construct smart windows and electronic devices.

Nano-pathways: Bridging the divide between water-processable nanoparticulate and bulk heterojunction organic photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holmes, Natalie P.; Marks, Melissa; Kumar, Pankaj

2015-11-26

In this paper, we report the application of a conjugated copolymer based on thiophene and quinoxaline units, namely poly[2,3-bis-(3-octyloxyphenyl)quinoxaline-5,8-diyl-alt-thiophene-2,5-diyl] (TQ1), to nanoparticle organic photovoltaics (NP-OPVs). TQ1 exhibits more desirable material properties for NP-OPV fabrication and operation, particularly a high glass transition temperature (T g) and amorphous nature, compared to the commonly applied semicrystalline polymer poly(3-hexylthiophene) (P3HT). This study reports the optimisation of TQ1:PC 71BM (phenyl C 71 butyric acid methyl ester) NP-OPV device performance by the application of mild thermal annealing treatments in the range of the T g (sub-T g and post-T g), both in the active layer dryingmore » stage and post-cathode deposition annealing stage of device fabrication, and an in-depth study of the effect of these treatments on nanoparticle film morphology. Finally and in addition, we report a type of morphological evolution in nanoparticle films for OPV active layers that has not previously been observed, that of PC 71BM nano-pathway formation between dispersed PC 71BM-rich nanoparticle cores, which have the benefit of making the bulk film more conducive to charge percolation and extraction.« less

Note: Improving long-term stability of hot-wire anemometer sensors by means of annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lundström, H., E-mail: hans.lundstrom@hig.se

2015-08-15

Annealing procedures for hot-wire sensors of platinum and platinum-plated tungsten have been investigated experimentally. It was discovered that the two investigated sensor metals behave quite differently during the annealing process, but for both types annealing may improve long-term stability considerably. Measured drift of sensors both without and with prior annealing is presented. Suggestions for suitable annealing temperatures and times are given.

Hafnium oxide films for application as gate dielectrics

NASA Astrophysics Data System (ADS)

Hsu, Shuo-Lin

The deposition and characterization of HfO2 films for potential application as a high-kappa gate dielectric in MOS devices has been investigated. DC magnetron reactive sputtering was utilized to prepare the HfO2 films. Structural, chemical, and electrical analyses were performed to characterize the various physical, chemical and electrical properties of the sputtered HfO2 films. The sputtered HfO2 films were annealed to simulate the dopant activation process used in semiconductor processing, and to study the thermal stability of the high-kappa, films. The changes in the film properties due to the annealing are also discussed in this work. Glancing angle XRD was used to analyse the atomic scale structure of the films. The as deposited films exhibit an amorphous, regardless of the film thickness. During post-deposition annealing, the thicker films crystallized at lower temperature (< 600°C), and ultra-thin (5.8 nm) film crystallized at higher temperature (600--720°C). The crystalline phase which formed depended on the thickness of the films. The low temperature phase (monoclinic) formed in the 10--20 nm annealed films, and high temperature phase (tetragonal) formed in the ultra-thin annealed HfO2 film. TEM cross-section studies of as deposited samples show that an interfacial layer (< 1nm) exists between HfO2/Si for all film thicknesses. The interfacial layer grows thicker during heat treatment, and grows more rapidly when grain boundaries are present. XPS surface analysis shows the as deposited films are fully oxidized with an excess of oxygen. Interfacial chemistry analysis indicated that the interfacial layer is a silicon-rich silicate layer, which tends to transform to silica-like layer during heat treatment. I-V measurements show the leakage current density of the Al/as deposited-HfO 2/Si MOS diode is of the order of 10-3 A/cm 2, two orders of magnitude lower than that of a ZrO2 film with similar physical thickness. Carrier transport is dominated by Schottky emission at lower electric fields, and by Frenkel-Poole emission in the higher electric field region. After annealing, the leakage current density decreases significantly as the structure remains amorphous structure. It is suggested that this decrease is assorted with the densification and defect healing which accures when the porous as-deposited amorphous structure is annealed. The leakage current density increases of the HfO2 layer crystallizes on annealing, which is attributed to the presence of grain boundaries. C-V measurements of the as deposited film shows typical C-V characteristics, with negligible hystersis, a small flat band voltage shift, but great frequency dispersion. The relative permittivity of HfO2/interfacial layer stack obtained from the capacitance at accumulation is 15, which corresponds to an EOT (equivalent oxide thickness) = 1.66 nm. After annealing, the frequency dispersion is greatly enhanced, and the C-V curve is shifted toward the negative voltage. Reliability tests show that the HfO2 films which remain amorphous after annealing possess superior resistance to constant voltage stress and ambient aging. This study concluded that the sputtered HfO 2 films exhibit an amorphous as deposited. Postdeposition annealing alters the crystallinity, interfacial properties, and electrical characteristics. The HfO2 films which remain amorphous structure after annealing possess the best electrical properties.

Phase Engineering of Perovskite Materials for High-Efficiency Solar Cells: Rapid Conversion of CH3NH3PbI3 to Phase-Pure CH3NH3PbCl3 via Hydrochloric Acid Vapor Annealing Post-Treatment.

PubMed

Zhou, Weiran; Zhou, Pengcheng; Lei, Xunyong; Fang, Zhimin; Zhang, Mengmeng; Liu, Qing; Chen, Tao; Zeng, Hualing; Ding, Liming; Zhu, Jun; Dai, Songyuan; Yang, Shangfeng

2018-01-17

Organometal halide CH 3 NH 3 PbI 3 (MAPbI 3 ) has been commonly used as the light absorber layer of perovskite solar cells (PSCs), and, especially, another halide element chlorine (Cl) has been often incorporated to assist the crystallization of perovskite film. However, in most cases, a predominant MAPbI 3 phase with trace of Cl - is obtained ultimately and the role of Cl involvement remains unclear. Herein, we develop a low-cost and facile method, named hydrochloric acid vapor annealing (HAVA) post-treatment, and realize a rapid conversion of MAPbI 3 to phase-pure MAPbCl 3 , demonstrating a new concept of phase engineering of perovskite materials toward efficiency enhancement of PSCs for the first time. The average grain size of perovskite film after HAVA post-treatment increases remarkably through an Ostwald ripening process, leading to a denser and smoother perovskite film with reduced trap states and enhanced crystallinity. More importantly, the generation of MAPbCl 3 secondary phase via phase engineering is beneficial for improving the carrier mobility with a more balanced carrier transport rate and enlarging the band gap of perovskite film along with optimized energy level alignment. As a result, under the optimized HAVA post-treatment time (2 min), we achieved a significant enhancement of the power conversion efficiency (PCE) of the MAPbI 3 -based planar heterojunction-PSC device from 14.02 to 17.40% (the highest PCE reaches 18.45%) with greatly suppressed hysteresis of the current-voltage response.

Silicon Carbide Temperature Monitor Processing Improvements. Status Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Unruh, Troy Casey; Daw, Joshua Earl; Ahamad Al Rashdan

2016-01-29

Silicon carbide (SiC) temperature monitors are used as temperature sensors in Advanced Test Reactor (ATR) irradiations at the Idaho National Laboratory (INL). Although thermocouples are typically used to provide real-time temperature indication in instrumented lead tests, other indicators, such as melt wires, are also often included in such tests as an independent technique of detecting peak temperatures incurred during irradiation. In addition, less expensive static capsule tests, which have no leads attached for real-time data transmission, often rely on melt wires as a post-irradiation technique for peak temperature indication. Melt wires are limited in that they can only detect whethermore » a single temperature is or is not exceeded. SiC monitors are advantageous because a single monitor can be used to detect for a range of temperatures that occurred during irradiation. As part of the process initiated to make SiC temperature monitors available at the ATR, post-irradiation evaluations of these monitors have been previously completed at the High Temperature Test Laboratory (HTTL). INL selected the resistance measurement approach for determining irradiation temperature from SiC temperature monitors because it is considered to be the most accurate measurement. The current process involves the repeated annealing of the SiC monitors at incrementally increasing temperature, with resistivity measurements made between annealing steps. The process is time consuming and requires the nearly constant attention of a trained staff member. In addition to the expensive and lengthy post analysis required, the current process adds many potential sources of error in the measurement, as the sensor must be repeatedly moved from furnace to test fixture. This time-consuming post irradiation analysis is a significant portion of the total cost of using these otherwise inexpensive sensors. An additional consideration of this research is that, if the SiC post processing can be automated, it could be performed in an MFC hot cell, further reducing the time and expense of lengthy decontaminations prior to processing. Sections of this report provide a general description of resistivity techniques currently used to infer peak irradiation temperature from silicon carbide temperature monitors along with some representative data, the proposed concepts to improve the process of analyzing irradiated SiC temperature monitors, the completed efforts to prove the proposed concepts, and future activities. The efforts detailed here succeeded in designing and developing a real-time automated SiC resistivity measurement system, and performed two initial test runs. Activities carried out include the assembly and integration of the system hardware; the design and development of a preliminary monitor fixture; the design of a technique to automate the data analysis and processing; the development of the communication, coordination, and user software; and the execution and troubleshooting of test run experiments using the box furnace. Although the automation system performed as required, the designed fixture did not succeed in establishing the needed electrical contacts with the SiC monitor.« less

Effect of annealing temperature on the microstructure and optical-electrical properties of Cu-Al-O thin films

NASA Astrophysics Data System (ADS)

Zhang, Y. J.; Liu, Z. T.; Zang, D. Y.; Che, X. S.; Feng, L. P.; Bai, X. X.

2013-12-01

We have successfully prepared Cu-Al-O thin films on silicon (100) and quartz substrates by radio frequency (RF) magnetron sputtering method. The as-deposited Cu-Al-O film is amorphous in nature and post-annealing treatment in argon ambience results in crystallization of the films and the formation of CuAlO2. The annealing temperature plays an important role in the surface morphology, phase constitution and preferred growth orientation of CuAlO2 phase, thus affecting the properties of the film. The film annealed at 900 °C is mainly composed of CuAlO2 phase and shows smooth surface morphology with well-defined grain boundaries, thus exhibiting the optimum optical-electrical properties with electrical resistivity being 79.7 Ω·cm at room temperature and optical transmittance being 80% in visible region. The direct optical band gaps of the films are found in the range of 3.3-3.8 eV depending on the annealing temperature.

The change of steel surface chemistry regarding oxygen partial pressure and dew point

NASA Astrophysics Data System (ADS)

Norden, Martin; Blumenau, Marc; Wuttke, Thiemo; Peters, Klaus-Josef

2013-04-01

By investigating the surface state of a Ti-IF, TiNb-IF and a MnCr-DP after several series of intercritical annealing, the impact of the annealing gas composition on the selective oxidation process is discussed. On behalf of the presented results, it can be concluded that not the general oxygen partial pressure in the annealing furnace, which is a result of the equilibrium reaction of water and hydrogen, is the main driving force for the selective oxidation process. It is shown that the amounts of adsorbed gases at the strip surface and the effective oxygen partial pressure resulting from the adsorbed gases, which is mainly dependent on the water content of the annealing furnace, is driving the selective oxidation processes occurring during intercritical annealing. Thus it is concluded, that for industrial applications the dew point must be the key parameter value for process control.

Analysis of Al diffusion processes in TiN barrier layers for the application in silicon solar cell metallization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumm, J.; Samadi, H.; Chacko, R. V.

An evaporated Al layer is known as an excellent rear metallization for highly efficient solar cells, but suffers from incompatibility with a common solder process. To enable solar cell-interconnection and module integration, in this work the Al layer is complemented with a solder stack of TiN/Ti/Ag or TiN/NiV/Ag, in which the TiN layer acts as an Al diffusion barrier. X-ray photoelectron spectroscopy measurements prove that diffusion of Al through the stack and the formation of an Al{sub 2}O{sub 3} layer on the stack's surface are responsible for a loss of solderability after a strong post-metallization anneal, which is often mandatorymore » to improve contact resistance and passivation quality. An optimization of the reactive TiN sputter process results in a densification of the TiN layer, which improves its barrier quality against Al diffusion. However, measurements with X-ray diffraction and scanning electron microscopy show that small grains with vertical grain boundaries persist, which still offer fast diffusion paths. Therefore, the concept of stuffing is introduced. By incorporating oxygen into the grain boundaries of the sputtered TiN layer, Al diffusion is strongly reduced as confirmed by secondary ion mass spectroscopy profiles. A quantitative analysis reveals a one order of magnitude lower Al diffusion coefficient for stuffed TiN layers. This metallization system maintains its solderability even after strong post-metallization annealing at 425 °C for 15 min. This paper thus presents an industrially feasible, conventionally solderable, and long-term stable metallization scheme for highly efficient silicon solar cells.« less

Evolution of secondary-phase precipitates during annealing of the 12Kh18N9T steel irradiated with neutrons to a dose of 5 DPA

NASA Astrophysics Data System (ADS)

Tsai, K. V.; Maksimkin, O. P.; Turubarova, L. G.

2007-03-01

The formation and evolution of thermally-induced secondary precipitates in an austenitic stainless steel 12Kh18N9T irradiated in the core of a laboratory reactor VVR-K to a dose of 5 dpa and subjected to post-radiation isochronous annealings for 1 h in a temperature range from 450 to 1050°C have been studied using transmission electron microscopy (TEM) and microhardness measurements. It has been shown that the formation of stitch (secondary) titanium carbides and M 23C6 carbides at grain and twin boundaries after annealing at 1050°C is preceded by a complex evolution of fineparticles of secondary phases (titanium carbides and nitrides) precipitated at dislocation loops and dislocations during annealing at temperatures above 750°C.

Significant improvement in the thermal annealing process of optical resonators

NASA Astrophysics Data System (ADS)

Salzenstein, Patrice; Zarubin, Mikhail

2017-05-01

Thermal annealing performed during process improves the quality of the roughness of optical resonators reducing stresses at the periphery of their surface thus allowing higher Q-factors. After a preliminary realization, the design of the oven and the electronic method were significantly improved thanks to nichrome resistant alloy wires and chopped basalt fibers for thermal isolation during the annealing process. Q-factors can then be improved.

In-Line Monitoring of Fab Processing Using X-Ray Diffraction

NASA Astrophysics Data System (ADS)

Gittleman, Bruce; Kozaczek, Kris

2005-09-01

As the materials shift that started with Cu continues to advance in the semiconductor industry, new issues related to materials microstructure have arisen. While x-ray diffraction (XRD) has long been used in development applications, in this paper we show that results generated in real time by a unique, high throughput, fully automated XRD metrology tool can be used to develop metrics for qualification and monitoring of critical processes in current and future manufacturing. It will be shown that these metrics provide a unique set of data that correlate to manufacturing issues. For example, ionized-sputtering is the current deposition method of choice for both the Cu seed and TaNx/Ta barrier layers. The alpha phase of Ta is widely used in production for the upper layer of the barrier stack, but complete elimination of the beta phase requires a TaNx layer with sufficient N content, but not so much as to start poisoning the target and generating particle issues. This is a well documented issue, but traditional monitoring by sheet resistance methods cannot guarantee the absence of the beta phase, whereas XRD can determine the presence of even small amounts of beta. Nickel silicide for gate metallization is another example where monitoring of phase is critical. As well being able to qualify an anneal process that gives only the desired NiSi phase everywhere across the wafer, XRD can be used to determine if full silicidation of the Ni has occurred and characterize the crystallographic microstructure of the Ni to determine any effect of that microstructure on the anneal process. The post-anneal nickel silicide phase and uniformity of the silicide microstructure can all be monitored in production. Other examples of the application of XRD to process qualification and production monitoring are derived from the dependence of certain processes, some types of defect generation, and device performance on crystallographic texture. The data presented will show that CMP dishing problems could be traced to texture of the barrier layer and mitigated by adjusting the barrier process. The density of pits developed during CMP of electrochemically deposited (ECD) Cu depends on the fraction of (111) oriented grains. It must be emphasized that the crystallographic texture is not only a key parameter for qualification of high yielding and reliable processes, but also serves as a critical parameter for monitoring tool health. The texture of Cu and W are sensitive not only to deviations in performance of the tool depositing or annealing a particular film, but also highly sensitive to the texture of the barrier underlayers and thus any performance deviations in those tools. The XRD metrology tool has been designed with production monitoring in mind and has been fully integrated into both 200 mm and 300 mm fabs. Rapid analysis is achieved by using a high intensity fixed x-ray source, coupled with a large area 2D detector. The output metrics from one point are generated while the tool is measuring a subsequent point, giving true on-the-fly analysis; no post-processing of data is necessary. Spatial resolution on the wafer surface ranging from 35 μm to 1 mm is available, making the tool suitable for monitoring of product wafers. Typical analysis times range from 10 seconds to 2 minutes per point, depending on the film thickness and spot size. Current metrics used for process qualification and production monitoring are phase, FWHM of the primary phase peaks (for mean grain size tracking), and crystallographic texture.

Local Resistance Profiling of Ultra Shallow Junction Annealed with Combination of Spike Lamp and Laser Annealing Processes using Scanning Spreading Resistance Microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abo, Satoshi; Nishikawa, Kazuhisa; Ushigome, Naoya

2011-01-07

Local resistance profiles of ultra shallow boron and arsenic implanted into silicon with energies of 2.0 and 4.0 keV and doses of 2.0x10{sup 15} and 1.0x10{sup 15} ions/cm{sup 2} activated by a combination of conventional spike lamp and laser annealing processes were measured by scanning spreading resistance microscope (SSRM) with a depth resolution of less than 10 nm. The lowest local resistance at the low resistance region in 2.0 keV boron implanted silicon with 1050 deg. C spike lamp annealing followed by 0.35 kW/mm{sup 2} laser annealing was half of that without laser annealing. The lowest local resistance at themore » low resistance region in the arsenic implanted silicon activated by 1050 deg. C spike lamp annealing followed by 0.39 kW/mm{sup 2} laser annealing was 74% lower than that followed by 0.36 kW/mm{sup 2} laser annealing. The lowest local resistances at the low resistance regions in the arsenic implanted silicon with 0.36 and 0.39 kW/mm{sup 2} laser annealing followed by 1050 deg. C spike lamp annealing were 41 and 33% lower than those with spike lamp annealing followed by laser annealing. Laser annealing followed by spike lamp annealing could suppress the diffusion of the impurities and was suitable for making the ultra shallow and low resistance regions.« less

Influence of annealing temperature on optical properties of Al doped ZnO nanoparticles via sol-gel methods

NASA Astrophysics Data System (ADS)

Rashid, Affa Rozana Abd; Hazwani, Tuan Nur; Mukhtar, Wan Maisarah; Taib, Nur Athirah Mohd

2018-06-01

Zinc oxide (ZnO) thin films have become technologically important materials due to their wide range of electrical and optical properties. The characteristics can be further adjusted by adequate doping processes. The effect of dopant concentration of Al, heating treatment and annealing in reducing atmosphere on the optical properties of the thin films is discussed. Undoped and aluminum-doped zinc oxide (AZO) thin films are prepared by the sol-gel method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine are used as precursor, solvent and stabilizer. In the case of AZO, aluminum nitrate nanohydrate is added to the precursor solution with an atomic percentage equal to 0 %, 1 %, 2 % and 3 % of Al. The multi thin layers are transformed into ZnO upon annealing at 450 °C and 500 °C. The optical properties such as transmittance, absorbance, band gap and refractive index of the thin films have been investigated by using UV-Visible Spectroscopy (UV-Vis). The results show that the effect of aluminium dopant concentration on the optical properties is depend on the post-heat treatment of the films. By doping with Al, the transmittance spectra in visible range increased and widen the band gap of ZnO which might due to Burstein-moss effects.

Microstructure and Mechanical Properties of V-Nb Microalloyed Ultrafine-Grained Dual-Phase Steels Processed Through Severe Cold Rolling and Intercritical Annealing

NASA Astrophysics Data System (ADS)

Papa Rao, M.; Subramanya Sarma, V.; Sankaran, S.

2017-03-01

Ultrafine-grained (UFG) dual-phase (DP) steel was produced by severe cold rolling (true strain of 2.4) and intercritical annealing of a low carbon V-Nb microalloyed steel in a temperature range of 1003 K to 1033 K (730 °C to 760 °C) for 2 minutes, and water quenching. The microstructure of UFG DP steels consisted of polygonal ferrite matrix with homogeneously distributed martensite islands (both of size <1 µm) and a small fraction of the inter lath films of retained austenite. The UFG DP steel produced through intercritical annealing at 1013 K (740 °C) has good combination of strength (1295 MPa) and ductility (uniform elongation, 13 pct). The nanoscale V- and Nb-based carbides/carbonitrides and spheroidized cementite particles have played a crucial role in achieving UFG DP microstructure and in improving the strength and work hardening. Analysis of work hardening behavior of the UFG DP steels through modified Crussard-Jaoul analysis showed a continuously varying work hardening rate response which could be approximated by 2 or 3 linear regimes. The transmission electron microscopy analysis on post tensile-tested samples indicated that these regimes are possibly related to the work hardening of ferrite, lath, and twin martensite, respectively.

Joining of alumina via copper/niobium/copper interlayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marks, Robert A.; Chapman, Daniel R.; Danielson, David T.

2000-03-15

Alumina has been joined at 1150 degrees C and 1400 degrees C using multilayer copper/niobium/copper interlayers. Four-point bend strengths are sensitive to processing temperature, bonding pressure, and furnace environment (ambient oxygen partial pressure). Under optimum conditions, joints with reproducibly high room temperature strengths (approximately equal 240 plus/minus 20 MPa) can be produced; most failures occur within the ceramic. Joints made with sapphire show that during bonding an initially continuous copper film undergoes a morphological instability, resulting in the formation of isolated copper-rich droplets/particles at the sapphire/interlayer interface, and extensive regions of direct bonding between sapphire and niobium. For optimized aluminamore » bonds, bend tests at 800 degrees C-1100 degrees C indicate significant strength is retained; even at the highest test temperature, ceramic failure is observed. Post-bonding anneals at 1000 degrees C in vacuum or in gettered argon were used to assess joint stability and to probe the effect of ambient oxygen partial pressure on joint characteristics. Annealing in vacuum for up to 200 h causes no significant decrease in room temperature bend strength or change in fracture path. With increasing anneal time in a lower oxygen partial pressure environment, the fracture strength decreases only slightly, but the fracture path shifts from the ceramic to the interface.« less

Performance improvement for solution-processed high-mobility ZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Sha Li, Chen; Li, Yu Ning; Wu, Yi Liang; Ong, Beng S.; Loutfy, Rafik O.

2008-06-01

The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

Effect of Post-annealing on the Electrochromic Properties of Layer-by-Layer Arrangement FTO-WO3-Ag-WO3-Ag

NASA Astrophysics Data System (ADS)

Hoseinzadeh, S.; Ghasemiasl, R.; Bahari, A.; Ramezani, A. H.

2018-03-01

In the current study, composites of tungsten trioxide (W03) and silver (Ag) are deposited in a layer-by-layer electrochromic (EC) arrangement onto a fluorine-doped tin oxide coated glass substrate. Tungsten oxide nanoparticles are an n-type semiconductor that can be used as EC cathode material. Nano-sized silver is a metal that can serve as an electron trap center that facilitates charge departure. In this method, the WO3 and Ag nanoparticle powder were deposited by physical vapor deposition onto the glass substrate. The fabricated electrochromic devices (ECD) were post-annealed to examine the effect of temperature on their EC properties. The morphology of the thin film was characterized by scanning electron microscopy and atomic force microscopy. Structural analysis showed that the addition of silver dopant increased the size of the aggregation of the film. The film had an average approximate roughness of about 17.8 nm. The electro-optical properties of the thin film were investigated using cyclic voltammetry and UV-visible spectroscopy to compare the effects of different post-annealing temperatures. The ECD showed that annealing at 200°C provided better conductivity (maximum current of about 90 mA in the oxidation state) and change of transmittance (ΔT = 90% at the continuous switching step) than did the other thin films. The optical band gaps of the thin film showed that it allowed direct transition at 3.85 eV. The EC properties of these combinations of coloration efficiency and response time indicate that the WO3-Ag-WO3-Ag arrangement is a promising candidate for use in such ECDs.

Effects of annealing on the physical properties of therapeutic proteins during freeze drying process.

PubMed

Lim, Jun Yeul; Lim, Dae Gon; Kim, Ki Hyun; Park, Sang-Koo; Jeong, Seong Hoon

2018-02-01

Effects of annealing steps during the freeze drying process on etanercept, model protein, were evaluated using various analytical methods. The annealing was introduced in three different ways depending on time and temperature. Residual water contents of dried cakes varied from 2.91% to 6.39% and decreased when the annealing step was adopted, suggesting that they are directly affected by the freeze drying methods Moreover, the samples were more homogenous when annealing was adopted. Transition temperatures of the excipients (sucrose, mannitol, and glycine) were dependent on the freeze drying steps. Size exclusion chromatography showed that monomer contents were high when annealing was adopted and also they decreased less after thermal storage at 60°C. Dynamic light scattering results exhibited that annealing can be helpful in inhibiting aggregation and that thermal storage of freeze-dried samples preferably induced fragmentation over aggregation. Shift of circular dichroism spectrum and of the contents of etanercept secondary structure was observed with different freeze drying steps and thermal storage conditions. All analytical results suggest that the physicochemical properties of etanercept formulation can differ in response to different freeze drying steps and that annealing is beneficial for maintaining stability of protein and reducing the time of freeze drying process. Copyright © 2017 Elsevier B.V. All rights reserved.

Thin film transistor performance of amorphous indium–zinc oxide semiconductor thin film prepared by ultraviolet photoassisted sol–gel processing

NASA Astrophysics Data System (ADS)

Kodzasa, Takehito; Nobeshima, Taiki; Kuribara, Kazunori; Yoshida, Manabu

2018-05-01

We have fabricated an amorphous indium–zinc oxide (IZO, In/Zn = 3/1) semiconductor thin-film transistor (AOS-TFT) by the sol–gel technique using ultraviolet (UV) photoirradiation and post-treatment in high-pressure O2 at 200 °C. The obtained TFT showed a hole carrier mobility of 0.02 cm2 V‑1 s‑1 and an on/off current ratio of 106. UV photoirradiation leads to the decomposition of the organic agents and hydroxide group in the IZO gel film. Furthermore, the post-treatment annealing at a high O2 pressure of more than 0.6 MPa leads to the filling of the oxygen vacancies in a poor metal–oxygen network in the IZO film.

Amplified Self-replication of DNA Origami Nanostructures through Multi-cycle Fast-annealing Process

NASA Astrophysics Data System (ADS)

Zhou, Feng; Zhuo, Rebecca; He, Xiaojin; Sha, Ruojie; Seeman, Nadrian; Chaikin, Paul

We have developed a non-biological self-replication process using templated reversible association of components and irreversible linking with annealing and UV cycles. The current method requires a long annealing time, up to several days, to achieve the specific self-assembly of DNA nanostructures. In this work, we accomplished the self-replication with a shorter time and smaller replication rate per cycle. By decreasing the ramping time, we obtained the comparable replication yield within 90 min. Systematic studies show that the temperature and annealing time play essential roles in the self-replication process. In this manner, we can amplify the self-replication process to a factor of 20 by increasing the number of cycles within the same amount of time.

Comment on ``heating rate effects in thermoluminescent glow-peaks''

NASA Astrophysics Data System (ADS)

Horowitz, Y.

1993-12-01

In a recent article, Kitis et al. [Nucl. Instr. and Meth. B 73 (1993) 367] discuss the effect of heating rate on three well-known thermoluminescence (TL) glow peaks; the 110°C glow peak of Norwegian quartz, the 210°C "dosimetry" glow peak of LiF:Mg,Ti (peak 5 in TLD-700) and the 250°C glow peak of natural Cap 2 : MBLE. The authors state that they focus their attention on "single, well-separated, glow peaks" in order to "test the theory", presumably charge detrapping kinetic theory. To achieve this rather elusive goal for the 210°C peak in LiF:Mg,Ti, the authors employ a 140°C/60 min post-irradiation anneal to depopulate the low temperature peaks. There is, however, substantial evidence in the TL literature over the past three decades that an anneal of this duration at elevated temperatures induces various thermally activated clustering and precipitation processes leading to trap modification and possible creation of new traps.

Oxygen-induced high diffusion rate of magnesium dopants in GaN/AlGaN based UV LED heterostructures.

PubMed

Michałowski, Paweł Piotr; Złotnik, Sebastian; Sitek, Jakub; Rosiński, Krzysztof; Rudziński, Mariusz

2018-05-23

Further development of GaN/AlGaN based optoelectronic devices requires optimization of the p-type material growth process. In particular, uncontrolled diffusion of Mg dopants may decrease the performance of a device. Thus it is meaningful to study the behavior of Mg and the origins of its diffusion in detail. In this work we have employed secondary ion mass spectrometry to study the diffusion of magnesium in GaN/AlGaN structures. We show that magnesium has a strong tendency to form Mg-H complexes which immobilize Mg atoms and restrain their diffusion. However, these complexes are not present in samples post-growth annealed in an oxygen atmosphere or Al-rich AlGaN structures which naturally have a high oxygen concentration. In these samples, more Mg atoms are free to diffuse and thus the average diffusion length is considerably larger than for a sample annealed in an inert atmosphere.

Modifying ultrafast optical response of sputtered VOX nanostructures in a broad spectral range by altering post annealing atmosphere

NASA Astrophysics Data System (ADS)

Kürüm, U.; Yaglioglu, H. G.; Küçüköz, B.; Oksuzoglu, R. M.; Yıldırım, M.; Yağcı, A. M.; Yavru, C.; Özgün, S.; Tıraş, T.; Elmali, A.

2015-01-01

Nanostructured VOX thin films were grown in a dc magnetron sputter system under two different Ar:O2 gas flow ratios. The films were annealed under vacuum and various ratios of O2/N2 atmospheres. The insulator-to-metal transition properties of the thin films were investigated by temperature dependent resistance measurement. Photo induced insulator-to-metal transition properties were investigated by Z-scan and ultrafast white light continuum pump probe spectroscopy measurements. Experiments showed that not only insulator-to-metal transition, but also wavelength dependence (from NIR to VIS) and time scale (from ns to ultrafast) of nonlinear optical response of the VOX thin films could be fine tuned by carefully adjusting post annealing atmosphere despite different initial oxygen content in the production. Fabricated VO2 thin films showed reflection change in the visible region due to photo induced phase transition. The results have general implications for easy and more effective fabrication of the nanostructured oxide systems with controllable electrical, optical, and ultrafast optical responses.

Ta2O5 Polycrystalline Silicon Capacitors with CF4 Plasma Treatment

NASA Astrophysics Data System (ADS)

Kao, Chyuan-Haur; Chen, Hsiang

2012-04-01

In this research, the effects of CF4 plasma treatment with post annealing on the electrical characteristics and material properties of Ta2O5 dielectrics were determined. The dielectric performance characteristics of samples under different treatment conditions were measured using equivalent oxide thickness (EOT), current density-electric field (J-E) characteristics, gate voltage shift versus time, and Weibull plots. In addition, X-ray diffraction (XRD) analysis provided insight into the changes in crystalline structure, atomic force microscopy (AFM) measurements visualized the surface roughness, and secondary ion mass spectroscopy (SIMS) revealed the distribution of fluorine ions inside the dielectric samples. Findings indicate that dielectric performance can be significantly improved by CF4 plasma treatment for 1 min with post annealing at 800 °C. The improvements in electrical characteristics were caused by the appropriate incorporation of the fluorine atoms and the removal of the dangling bonds and traps. The Ta2O5 dielectric incorporated with appropriate CF4 plasma and annealing treatments shows great promise for future generation of nonvolatile memory applications.

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1991-01-01

The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

Attachment of 3-(Aminopropyl)triethoxysilane on silicon oxide surfaces: dependence on solution temperature.

PubMed

Pasternack, Robert M; Rivillon Amy, Sandrine; Chabal, Yves J

2008-11-18

Parameters important to the self-assembly of 3-(aminopropyl)triethoxysilane (APTES) on chemically grown silicon oxide (SiO 2) to form an aminopropyl silane (APS) film have been investigated using in situ infrared (IR) absorption spectroscopy. Preannealing to approximately 70 degrees C produces significant improvements in the quality of the film: the APS film is denser, and the Si-O-Si bonds between the molecules and the SiO 2 surface are more structured and ordered with only a limited number of remaining unreacted ethoxy groups. In contrast, post-annealing the functionalized SiO 2 samples after room temperature reaction with APTES (i.e., ex situ annealing) does not lead to any spectral change, suggesting that post-annealing has no strong effect on the horizontal polymerization as suggested earlier. Both IR and ellipsometry data show that the higher the solution temperature, the denser and thinner the APS layer is for a given immersion time. Finally, the APS layer obtained by preannealing the solution at 70 degrees C exhibits a better stability in deionized water than the APS layer prepared at room temperature.

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1991-01-01

Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), and static induction transistors (SITs) are given. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Postirradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

Preparation and characterization of VO₂(M)-SnO₂ thermochromic films for application as energy-saving smart coatings.

PubMed

Li, Wenjing; Ji, Shidong; Qian, Kun; Jin, Ping

2015-10-15

Novel VO2(M)/SnO2 heterostructured nanorods are prepared by combining the conventional hydrothermal synthesis method and post annealing process. The results reveal that the nanosized SnO2 particles are not only successfully grown on the surface of the VO2 nanorods but also uniformly distribute on VO2 without aggregation. The existence of the SnO2 nanoparticles inhibits the aggregation during the annealing process and widens the band gap of the VO2 crystals from 0.75 to 1.7 eV. The two aspects can both improve the optical properties of the VO2(M)/SnO2 composite film. The visible transmittance is up to 35.7% and the IR modulation at 2500 nm is more than 56%, which were much higher than the pure VO2(M) film. In addition, the SnO2 layer could reduce the width of the hysteresis from 17.8 to 10.7°C caused by Sn-doping and enhance the sensitivity. We believe that the VO2(M)/SnO2 heterostructured coating is a good candidate for smart windows. Copyright © 2015 Elsevier Inc. All rights reserved.

Fabrication of doped TiO2 nanotube array films with enhanced photo-catalytic activity

NASA Astrophysics Data System (ADS)

Peighambardoust, Naeimeh-Sadat; Khameneh-asl, Shahin; Khademi, Adib

2018-01-01

In the present work, we investigate the N and Fe-doped TiO2 nanotube array film prepared by treating TiO2 nanotube array film with ammonia solution and anodizing in Fe(NO3)3 solution respectively. This method avoided the use of hazardous ammonia gas, or laborious ion implantation process. N and Fe-doped TiO2 nanotube arrays (TiO2 NTs) were prepared by electrochemical anodization process in 0.5 wt % HF aqueous solution. The anodization was performed at the conditions of 20 V and 20 min, Followed by a wet immersion in NH3.H2O (1M) for N-doping for 2 hr and annealing post-treatment at 450 °C. The morphology and structure of the nanotube films were characterized by field emission scanning electron microscope (FESEM) and EDX. UV-vis. illumination test were done to observe photo-enhanced catalysis. The effect of different annealing temperature on the structure and photo-absorption property of the TiO2-TNTs was investigated. The results showed that N-TNTs nanotubes exhibited higher photocatalytic activity compared whit the Fe-doped and pure TNTs, because doping N promoted the separation of the photogenerated electrons and holes.

Electrical and optical characteristics of n-Zno/p-GaN hetero-junction diode fabricated by ultra-high vacuum sputter.

PubMed

Cho, Seong Gook; Lee, Dong Uk; Kim, Eun Kyu

2013-09-01

We investigated the electrical and optical properties of n-ZnO/p-GaN hetero-junction diode fabricated by an ultra-high vacuum radio frequency magnetron sputter. A physical relationship between the rotation rate during deposition process and post annealing conditions after deposited ZnO layer on p-GaN layer was discussed. When the rotation rates during deposition process of n-ZnO layer were 5 rpm and 15 rpm, the full width at half maximum of photoluminescence spectra of ZnO layer on the p-GaN layer was about 106 and 133 meV, respectively. Also, the ratio of deep level emission to near band edge emission was dramatically increased as increasing the rotation rate from 5 to 15 rpm. The n-ZnO/p-GaN hetero-junction diode grown at 5 rpm has a higher ratio of forward to reverse currents than the diode grown at 15 rpm. Also, the 600 degrees C-annealed diodes with 5 rpm showed good rectifying behavior with the barrier height of 0.74 eV, the ideality factor of 12.2, and the forward to reverse current ratio of 614 at +/- 8 V.

Room temperature photoluminescence properties of ZnO nanorods grown by hydrothermal reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwan, S., E-mail: iwan-sugihartono@unj.ac.id; Prodi Ilmu Material, Departemen Fisika, FMIPA, Universitas Indonesia, Kampus UI Depok; Fauzia, Vivi

Zinc oxide (ZnO) nanorods were fabricated by a hydrothermal reaction on silicon (Si) substrate at 95 °C for 6 hours. The ZnO seed layer was fabricated by depositing ZnO thin films on Si substrates by ultrasonic spray pyrolisis (USP). The annealing effects on crystal structure and optical properties of ZnO nanorods were investigated. The post-annealing treatment was performed at 800 °C with different environments. The annealed of ZnO nanorods were characterized by X-ray diffraction (XRD) and photoluminescence (PL) in order to analyze crystal structure and optical properties, respectively. The results show the orientations of [002], [101], [102], and [103] diffractionmore » peaks were observed and hexagonal wurtzite structure of ZnO nanorods were vertically grown on Si substrates. The room temperature PL spectra show ultra-violet (UV) and visible emissions. The annealed of ZnO nanorods in vacuum condition (3.8 × 10{sup −3} Torr) has dominant UV emission. Meanwhile, non-annealed of ZnO nanorods has dominant visible emission. It was expected that the annealed of ZnO in vacuum condition suppresses the existence of native defects in ZnO nanorods.« less

3D nanostructured inkjet printed graphene via UV-pulsed laser irradiation enables paper-based electronics and electrochemical devices.

PubMed

Das, Suprem R; Nian, Qiong; Cargill, Allison A; Hondred, John A; Ding, Shaowei; Saei, Mojib; Cheng, Gary J; Claussen, Jonathan C

2016-09-21

Emerging research on printed and flexible graphene-based electronics is beginning to show tremendous promise for a wide variety of fields including wearable sensors and thin film transistors. However, post-print annealing/reduction processes that are necessary to increase the electrical conductivity of the printed graphene degrade sensitive substrates (e.g., paper) and are whole substrate processes that are unable to selectively anneal/reduce only the printed graphene-leaving sensitive device components exposed to damaging heat or chemicals. Herein a pulsed laser process is introduced that can selectively irradiate inkjet printed reduced graphene oxide (RGO) and subsequently improve the electrical conductivity (Rsheet∼0.7 kΩ□(-1)) of printed graphene above previously published reports. Furthermore, the laser process is capable of developing 3D petal-like graphene nanostructures from 2D planar printed graphene. These visible morphological changes display favorable electrochemical sensing characteristics-ferricyanide cyclic voltammetry with a redox peak separation (ΔEp) ≈ 0.7 V as well as hydrogen peroxide (H2O2) amperometry with a sensitivity of 3.32 μA mM(-1) and a response time of <5 s. Thus this work paves the way for not only paper-based electronics with graphene circuits, it enables the creation of low-cost and disposable graphene-based electrochemical electrodes for myriad applications including sensors, biosensors, fuel cells, and theranostic devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berdova, Maria; Liu, Xuwen; Franssila, Sami, E-mail: sami.franssila@aalto.fi

The investigation of mechanical properties of atomic layer deposition HfO{sub 2} films is important for implementing these layers in microdevices. The mechanical properties of films change as a function of composition and structure, which accordingly vary with deposition temperature and post-annealing. This work describes elastic modulus, hardness, and wear resistance of as-grown and annealed HfO{sub 2}. From nanoindentation measurements, the elastic modulus and hardness remained relatively stable in the range of 163–165 GPa and 8.3–9.7 GPa as a function of deposition temperature. The annealing of HfO{sub 2} caused significant increase in hardness up to 14.4 GPa due to film crystallization and densification. Themore » structural change also caused increase in the elastic modulus up to 197 GPa. Wear resistance did not change as a function of deposition temperature, but improved upon annealing.« less

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition.

PubMed

Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng; Wang, Yongte

2017-12-01

La 2 O 3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La 2 O 3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La 2 O 3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La 2 O 3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La 2 O 3 . Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La 2 O 3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

Effects of Post Annealing on I-V-T Characteristics of (Ni/Au)/Al0.09Ga0.91N Schottky Barrier Diodes

NASA Astrophysics Data System (ADS)

Akkaya, Abdullah; Ayyıldız, Enise

2016-04-01

Post annealing is a simple, effective and suitable method for improving the diode parameters, especially when the used chemically stable substrates like Si, III-N and ternary alloys. In our work, we were applied this method to (Ni/Au)/Al0.09Ga0.91N Schottky Barrier Diodes (SBDs) and investigated by temperature-dependent current-voltage (I-V-T) characteristics at optimum conditions. Optimum annealing temperature was 600°C, which it’s determined with respect to have a highest barrier height value. The temperature-dependent electrical characteristics of the annealed at 600°C (Ni/Au)/Al0.09Ga0.91N SBDs were investigated in the wide temperature range of 95-315K. The diode parameters such as ideality factor (n) and Schottky barrier height (Vb0) were obtained to be strongly temperature dependent. The observed variation in Vb0 and n can be attributed to the spatial barrier inhomogeneities in Schottky barrier height by assuming a triple Gaussian distribution (TGD) of barrier heights (BHs) at 95-145K, 145-230K and 230-315K. The modified Richardson plots and T0 analysis was performed to provide an experimental Richardson constants and bias coefficients of the mean barrier height. Furthermore, the chemical composition of the contacts was examined by the XPS depth profile analysis.

Fast annealing DSA materials designed for sub-5 nm resolution

NASA Astrophysics Data System (ADS)

Deng, Hai; Li, Xuemiao; Peng, Yu; Zhou, Jianuo

2018-03-01

In recent years, high-χ block copolymers (BCPs) have been reported to achieve sub-5 nm resolution. These BCPs always require long annealing time at high annealing temperature, which may limit their implementation into semiconductor process. Since hot baking time in conventional semiconductor process is normally less than 3 minutes, how to shorter the thermal annealing time at lower temperature becomes a new topic for the sub-5 nm high-χ BCPs. In this manuscript, various fluoro-containing BCPs are synthesized by living anionic polymerization or atom transfer radical polymerization. The best BCP formed thermal equilibrium sub-5 nm nano domains after mere 1 min annealing at temperature lower than 100 °C, which is the fastest thermal annealing process reported so far. BCPs with various morphology and domain size are obtained by precise control of both the length and the molar ratio of the two blocks. The resulted smallest half-pitch of the BCPs are less than 5 nm in lamella and hexagonal morphologies. Linear and starshaped BCPs containing PMMA and fluoro-block are also synthesized, which also shows best phase separation into ca. 6 nm half-pitch, however, the annealing time is 1 hour at 180 °C.

Thermal stress modification in regenerated fiber Bragg grating via manipulation of glass transition temperature based on CO₂-laser annealing.

PubMed

Lai, Man-Hong; Lim, Kok-Sing; Gunawardena, Dinusha S; Yang, Hang-Zhou; Chong, Wu-Yi; Ahmad, Harith

2015-03-01

In this work, we have demonstrated thermal stress relaxation in regenerated fiber Bragg gratings (RFBGs) by using direct CO₂-laser annealing technique. After the isothermal annealing and slow cooling process, the Bragg wavelength of the RFBG has been red-shifted. This modification is reversible by re-annealing and rapid cooling. It is repeatable with different cooling process in the subsequent annealing treatments. This phenomenon can be attributed to the thermal stress modification in the fiber core by means of manipulation of glass transition temperature with different cooling rates. This finding in this investigation is important for accurate temperature measurement of RFBG in dynamic environment.

Effect of intermediate annealing on the microstructure and mechanical property of ZK60 magnesium alloy produced by twin roll casting and hot rolling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Hongmei, E-mail: hmchen@just.edu.cn; Zang, Qianhao; Yu, Hui

2015-08-15

Twin roll cast (designated as TRC in short) ZK60 magnesium alloy strip with 3.5 mm thickness was used in this paper. The TRC ZK60 strip was multi-pass rolled at different temperatures, intermediate annealing heat treatment was performed when the thickness of the strip changed from 3.5 mm to 1 mm, and then continued to be rolled until the thickness reached to 0.5 mm. The effect of intermediate annealing during rolling process on microstructure, texture and room temperature mechanical properties of TRC ZK60 strip was studied by using OM, TEM, XRD and electronic universal testing machine. The introduction of intermediate annealingmore » can contribute to recrystallization in the ZK60 sheet which was greatly deformed, and help to reduce the stress concentration generated in the rolling process. Microstructure uniformity and mechanical properties of the ZK60 alloy sheet were also improved; in particular, the room temperature elongation was greatly improved. When the TRC ZK60 strip was rolled at 300 °C and 350 °C, the room temperature elongation of the rolled sheet with 0.5 mm thickness which was intermediate annealed during the rolling process was increased by 95% and 72% than that of no intermediate annealing, respectively. - Highlights: • Intermediate annealing was introduced during hot rolling process of twin roll cast ZK60 alloy. • Intermediate annealing can contribute to recrystallization and reduce the stress concentration in the deformed ZK60 sheet. • Microstructure uniformity and mechanical properties of the ZK60 sheet were improved, in particular, the room temperature elongation. • The elongation of the rolled ZK60 sheet after intermediate annealed was increased by 95% and 72% than that of no intermediate annealing.« less

Effect of annealing procedure on the bonding of ceramic to cobalt-chromium alloys fabricated by rapid prototyping.

PubMed

Tulga, Ayca

2018-04-01

An annealing procedure is a heat treatment process to improve the mechanical properties of cobalt-chromium (Co-Cr) alloys. However, information is lacking about the effect of the annealing process on the bonding ability of ceramic to Co-Cr alloys fabricated by rapid prototyping. The purpose of this in vitro study was to evaluate the effects of the fabrication techniques and the annealing procedure on the shear bond strength of ceramic to Co-Cr alloys fabricated by different techniques. Ninety-six cylindrical specimens (10-mm diameter, 10-mm height) made of Co-Cr alloy were prepared by casting (C), milling (M), direct process powder-bed (LaserCUSING) with and without annealing (CL+, CL), and direct metal laser sintering (DMLS) with annealing (EL+) and without annealing (EL). After the application of ceramic to the metal specimens, the metal-ceramic bond strength was assessed using a shear force test at a crosshead speed of 0.5 mm/min. Shear bond strength values were statistically analyzed by 1-way ANOVA and Tukey multiple comparison tests (α=.05). Although statistically significant differences were found among the 3 groups (M, 29.87 ±2.06; EL, 38.92 ±2.04; and CL+, 40.93 ±2.21; P=.002), no significant differences were found among the others (P>.05). The debonding surfaces of all specimens exhibited mixed failure mode. These results showed that the direct process powder-bed method is promising in terms of metal-ceramic bonding ability. The manufacturing technique of Co-Cr alloys and the annealing process influence metal-ceramic bonding. Copyright © 2017 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

Annealing of gallium nitride under high-N 2 pressure

NASA Astrophysics Data System (ADS)

Porowski, S.; Jun, J.; Krukowski, S.; Grzegory, I.; Leszczynski, M.; Suski, T.; Teisseyre, H.; Foxon, C. T.; Korakakis, D.

1999-04-01

GaN is the key material for blue and ultraviolet optoelectronics. It is a strongly bonded wurztite structure semiconductor with the direct energy gap 3.5 eV. Due to strong bonding, the diffusion processes require high temperatures, above 1300 K. However at this temperature range at ambient pressure, GaN becomes unstable and dissociates into Ga and N 2. Therefore high pressure of N 2 is required to study the diffusion and other annealing related processes. We studied annealing of bulk GaN nitride single crystals grown under high pressure and also annealing of homo- and heteroepitaxial GaN layers grown by MOCVD technique. Annealing at temperatures above 1300 K influences strongly the structural and optical properties of GaN crystals and layers. At this temperature diffusion of the Mg and Zn acceptors have been observed. In spite of very interesting experimental observations the understanding of microscopic mechanisms of these processes is limited.

Powder processing and mechanical properties of Silver0.86Lead19Antimony telluride20 (LAST) and Lead0.95Tin0.05Tellurium - Lead sulfide 8% (Lead telluride -Lead sulfide) thermoelectric materials

NASA Astrophysics Data System (ADS)

Ni, Jennifer Elisabeth

Thermoelectric (TE) materials convert between thermal and electrical energy and when used with existing processes will increase the efficiency via waste heat recovery. Ag0.86Pb19SbTe20 (LAST) and Pb0.95Sn0.05Te - PbS 8% (PbTe-PbS) materials exhibit good thermoelectric (TE) properties and have potential applications as thermoelectric generators in waste heat recovery. However, to fully characterize the thermo-mechanical behavior of LAST and PbTe-PbS materials under in-service conditions, knowledge is needed of the mechanical and thermal properties at room and high temperature. As fracture strength is inversely proportional to the square root of grain size, cast ingots were powder processed to reduce powder particle size. Three different powder processing methods were used (1) dry milling only, (2) wet milling only, or (3) dry milling and wet milling The specimens were fabricated using hot pressing or pulsed electric current sintering (PECS) from planetary ball milled powders. In this study, elastic moduli, including Young's modulus, shear modulus, and Poisson's ratio, were measured dynamically using resonant ultrasound spectroscopy (RUS) at room temperature and as a function of temperature up to 663 K. The room temperature porosity dependence for Young's modulus followed the empirical exponential relationships common for brittle materials, with a material dependent constant bPE of 3.5 and 1.3 for LAST and PbTe-PbS, respectively. The room temperature Young's modulus for a theoretically dense specimen was 58.4 +/- 0.6 GPa and 56.2 +/- 0.4 GPa for for LAST and PbTe-PbS, respectively. For hot pressed PbTe-PbS specimens, the Vickers indentations mean hardness and fracture toughness was 1.18 + 0.09 GPa and 0.35 +/- 0.04 MPa·m 1/2. The coefficient of thermal expansion is important for understanding the mechanical response of a material to a thermal gradient or a thermal transient. For PbTe-PbS the coefficient of thermal expansion measured using dilatometry and high temperature x-ray diffraction was 21.5 x 10-6 K -1. Bloating during post-densification annealing was measured indirectly using resonant ultrasound spectroscopy and dilatometry and directly using scanning electron microscopy. Dry milled only PECS-processed PbTe-PbS specimens did not bloat during post-densification anneals up to 936 K. Hot pressed and PECS-processed specimens processed from wet milled and dry and wet milled powder bloated during densification anneals at temperatures over 603 K.

Evidence for the formation of SiGe nanoparticles in Ge-implanted Si 3N 4

DOE PAGES

Mirzaei, S.; Kremer, F.; Feng, R.; ...

2017-03-14

SiGe nanoparticles were formed in an amorphous Si 3N 4 matrix by Ge + ion implantation and thermal annealing. The size of the nanoparticles was determined by transmission electron microscopy and their atomic structure by x-ray absorption spectroscopy. Nanoparticles were observed for excess Ge concentrations in the range from 9 to 12 at. % after annealing at temperatures in the range from 700 to 900 °C. The average nanoparticle size increased with excess Ge concentration and annealing temperature and varied from an average diameter of 1.8±0.2 nm for the lowest concentration and annealing temperature to 3.2±0.5 nm for the highestmore » concentration and annealing temperature. Our study demonstrates that the structural properties of embedded SiGe nanoparticles in amorphous Si 3N 4 are sensitive to the implantation and post implantation conditions. Furthermore, we demonstrate that ion implantation is a novel pathway to fabricate and control the SiGe nanoparticle structure and potentially useful for future optoelectronic device applications.« less

Influence of annealing on the photodeposition of silver on periodically poled lithium niobate

DOE PAGES

Carville, N. Craig; Neumayer, Sabine M.; Manzo, Michele; ...

2016-02-03

Here, the preferential deposition of metal nanoparticles onto periodically poled lithium niobate surfaces, whereby photogenerated electrons accumulate in accordance with local electric fields and reduce metal ions from solution, is known to depend on the intensity and wavelength of the illumination and the concentration of the solution used. Here, it is shown that for identical deposition conditions (wavelength, intensity, concentration), post-poling annealing for 10 h at 200 °C modifies the surface reactivity through the reorientation of internal defect fields. Whereas silver nanoparticles deposit preferentially on the +z domains on unannealed crystals, the deposition occurs preferentially along 180 degrees domain wallsmore » for annealed crystals. In neither case is the deposition selective; limited deposition occurs also on the unannealed -z domain surface and on both annealed domain surfaces. The observed behavior is attributed to a relaxation of the poling-induced defect frustration mediated by Li + ion mobility during annealing, which affects the accumulation of electrons, thereby changing the surface reactivity. The evolution of the defect field with temperature is corroborated using Raman spectroscopy.« less

Aerosol-Assisted Chemical Vapor Deposited Thin Films for Space Photovoltaics

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; McNatt, Jeremiah; Dickman, John E.; Jin, Michael H.-C.; Banger, Kulbinder K.; Kelly, Christopher V.; AquinoGonzalez, Angel R.; Rockett, Angus A.

2006-01-01

Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395 C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45, 1.43, 1.37, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03 percent.

Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

NASA Astrophysics Data System (ADS)

Yokoyama, Masafumi; Asakura, Yuji; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi

2014-06-01

We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al2O3/GaSb MOS interface properties. The Al2O3/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (Dit) of ˜4.5 × 1013 cm-2 eV-1. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al2O3/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.

Temperature-assisted morphological transition in CuPc thin films

NASA Astrophysics Data System (ADS)

Bae, Yu Jeong; Pham, Thi Kim Hang; Kim, Tae Hee

2016-05-01

Ex-situ and in-situ morphological analyses were performed for Cu-phthalocyanine (CuPc) organic semiconductor films by using atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED). The focus was the effects of post-annealing on the structural characteristics of CuPc films grown on MgO(001) layers by using an ultra-high-vacuum thermal evaporator. Sphere-to-nanofibril and 2-D to 3-D morphological transitions were observed with increasing CuPc thickness beyond 3 nm. The surface morphology and the crystallinity were drastically improved after an additional cooling of the post-annealed CuPc films thinner than 3 nm. Our results highlight that molecular orientation and structural ordering can be effectively controlled by using different temperature treatments and a proper combination of material, film thickness, and substrate.

On the solid phase crystallization of In{sub 2}O{sub 3}:H transparent conductive oxide films prepared by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Macco, Bart; Verheijen, Marcel A.; Black, Lachlan E.

2016-08-28

Hydrogen-doped indium oxide (In{sub 2}O{sub 3}:H) has emerged as a highly transparent and conductive oxide, finding its application in a multitude of optoelectronic devices. Recently, we have reported on an atomic layer deposition (ALD) process to prepare high quality In{sub 2}O{sub 3}:H. This process consists of ALD of In{sub 2}O{sub 3}:H films at 100 °C, followed by a solid phase crystallization step at 150–200 °C. In this work, we report on a detailed electron microscopy study of this crystallization process which reveals new insights into the crucial aspects for achieving the large grain size and associated excellent properties of the material. Themore » key finding is that the best optoelectronic properties are obtained by preparing the films at the lowest possible temperature prior to post-deposition annealing. Electron microscopy imaging shows that such films are mostly amorphous, but feature a very low density of embedded crystallites. Upon post-deposition annealing, crystallization proceeds merely from isotropic crystal grain growth of these embedded crystallites rather than by the formation of additional crystallites. The relatively high hydrogen content of 4.2 at. % in these films is thought to cause the absence of additional nucleation, thereby rendering the final grain size and optoelectronic properties solely dependent on the density of embedded crystallites. The temperature-dependent grain growth rate has been determined, from which an activation energy of (1.39 ± 0.04) eV has been extracted. Finally, on the basis of the observed crystallization mechanism, a simple model to fully describe the crystallization process has been developed. This model has been validated with a numerical implementation thereof, which accurately predicts the observed temperature-dependent crystallization behaviour.« less

Reduction in number of crystal defects in a p+Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing

NASA Astrophysics Data System (ADS)

Murakoshi, Atsushi; Harada, Tsubasa; Miyano, Kiyotaka; Harakawa, Hideaki; Aoyama, Tomonori; Yamashita, Hirofumi; Kohyama, Yusuke

2017-09-01

To reduce the number of crystal defects in a p+Si diffusion layer by a low-thermal-budget annealing process, we have examined crystal recovery in the amorphous layer formed by the cryogenic implantation of germanium and boron combined with sub-melt laser spike annealing (LSA). The cryogenic implantation at -150 °C is very effective in suppressing vacancy clustering, which is advantageous for rapid crystal recovery during annealing. The crystallinity after LSA is shown to be very high and comparable to that after rapid thermal annealing (RTA) owing to the cryogenic implantation, although LSA is a low-thermal-budget annealing process that can suppress boron diffusion effectively. It is also shown that in the p+Si diffusion layer, there is high contact resistance due to the incomplete formation of a metal silicide contact, which originates from insufficient outdiffusion of surface contaminants such as fluorine. To widely utilize the marked reduction in the number of crystal defects, sufficient removal of surface contaminants will be required in the low-thermal-budget process.

Thermal engineering of FAPbI3 perovskite material via radiative thermal annealing and in situ XRD

PubMed Central

Pool, Vanessa L.; Dou, Benjia; Van Campen, Douglas G.; Klein-Stockert, Talysa R.; Barnes, Frank S.; Shaheen, Sean E.; Ahmad, Md I.; van Hest, Maikel F. A. M.; Toney, Michael F.

2017-01-01

Lead halide perovskites have emerged as successful optoelectronic materials with high photovoltaic power conversion efficiencies and low material cost. However, substantial challenges remain in the scalability, stability and fundamental understanding of the materials. Here we present the application of radiative thermal annealing, an easily scalable processing method for synthesizing formamidinium lead iodide (FAPbI3) perovskite solar absorbers. Devices fabricated from films formed via radiative thermal annealing have equivalent efficiencies to those annealed using a conventional hotplate. By coupling results from in situ X-ray diffraction using a radiative thermal annealing system with device performances, we mapped the processing phase space of FAPbI3 and corresponding device efficiencies. Our map of processing-structure-performance space suggests the commonly used FAPbI3 annealing time, 10 min at 170 °C, can be significantly reduced to 40 s at 170 °C without affecting the photovoltaic performance. The Johnson-Mehl-Avrami model was used to determine the activation energy for decomposition of FAPbI3 into PbI2. PMID:28094249

Thermal engineering of FAPbI 3 perovskite material via radiative thermal annealing and in situ XRD

DOE PAGES

Pool, Vanessa L.; Dou, Benjia; Van Campen, Douglas G.; ...

2017-01-17

Lead halide perovskites have emerged as successful optoelectronic materials with high photovoltaic power conversion efficiencies and low material cost. However, substantial challenges remain in the scalability, stability and fundamental understanding of the materials. Here we present the application of radiative thermal annealing, an easily scalable processing method for synthesizing formamidinium lead iodide (FAPbI 3) perovskite solar absorbers. Devices fabricated from films formed via radiative thermal annealing have equivalent efficiencies to those annealed using a conventional hotplate. By coupling results from in situ X-ray diffraction using a radiative thermal annealing system with device performances, we mapped the processing phase space ofmore » FAPbI 3 and corresponding device efficiencies. Our map of processing-structure-performance space suggests the commonly used FAPbI 3 annealing time, 10 min at 170 degrees C, can be significantly reduced to 40 s at 170 degrees C without affecting the photovoltaic performance. Lastly, the Johnson-Mehl-Avrami model was used to determine the activation energy for decomposition of FAPbI 3 into PbI 2.« less

Effect of post annealing on structural, optical and dielectric properties of MgTiO3 thin films deposited by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Santhosh Kumar, T.; Bhuyan, R. K.; Pamu, D.

2013-01-01

MgTiO3 (MTO) thin films have been deposited on to quartz and platinized silicon (Pt/TiO2/SiO2/Si) substrates by RF magnetron sputtering. The metal-MTO-metal (Ag-MTO-Pt/TiO2/SiO2/Si) thin film capacitors have been fabricated at different oxygen mixing percentage (OMP). The effects of OMP and post annealing on the structural, microstructural, optical and dielectric properties of MTO films were studied. The MTO target has been synthesized by mechanochemical synthesis method. The phase purity of the sputtering target was confirmed from X-ray diffraction pattern and refined to R3bar space group with lattice parameters a = b = 5.0557(12) Å, c = 13.9003(9) Å. The chemical composition of the deposited films was confirmed from EDS spectra and all the films exhibited the composition of the sputtering target. The XRD patterns of the as-deposited films are amorphous and annealing at 700 °C for 1 h induced nanocrystallinity with the improved optical and dielectric properties. The annealed films exhibit refractive index in the range of 2.12-2.19 at 600 nm with an optical bandgap value in between 4.11 and 4.19 eV. The increase in the refractive index and bandgap upon annealing can be attributed to the improvement in packing density, crystallinity, and decrease in porosity ratio. Both the dielectric constant and tan δ decrease with the increase in frequency and were in the range of 13.7-31.11 and 0.006-0.124, respectively. The improvement in dielectric properties with the increase in OMP has been correlated to the reduction in oxygen vacancies, increase in crystallinity and grain size of the films.

Pulsed-Current Electrochemical Codeposition and Heat Treatment of Ti-Dispersed Ni-Matrix Layers

NASA Astrophysics Data System (ADS)

Janetaisong, Pathompong; Boonyongmaneerat, Yuttanant; Techapiesancharoenkij, Ratchatee

2016-08-01

An electrochemical deposition is a fast and cost-efficient process to produce film or coating. In this research, Ni-Ti electrodeposition is developed by codepositing a Ti-dispersed Ni-matrix layer from a Ni-plating solution suspended with Ti particles. To enhance the coating uniformity and control the atomic composition, the pulsed current was applied to codeposit Ni-Ti layers with varying pulse duty cycles (10 to 100 pct) and frequencies (10 to 100 Hz). The microstructures and compositions of the codeposited layers were analyzed by scanning electron microscopy, X-ray diffraction, and X-ray fluorescent techniques. The pulsed current significantly improved the quality of the Ni-Ti layer as compared to a direct current. The Ni-Ti layers could be electroplated with a controlled composition within 48 to 51 at. pct of Ti. The optimal pulse duty cycle and frequency are 50 pct and 10 Hz, respectively. The standalone Ni-49Ti layers were removed from copper substrates by selective etching method and subsequently heat-treated under Ar-fed atmosphere at 1423 K (1150 °C) for 5 hours. The phase and microstructures of the post-annealed samples exhibit different Ni-Ti intermetallic compounds, including NiTi, Ni3Ti, and NiTi2. Yet, the contamination of TiN and TiO2 was also present in the post-annealed samples.

Low-loss 3D-laser-written mid-infrared LiNbO₃ depressed-index cladding waveguides for both TE and TM polarizations.

PubMed

Nguyen, Huu-Dat; Ródenas, Airán; Vázquez de Aldana, Javier R; Martín, Guillermo; Martínez, Javier; Aguiló, Magdalena; Pujol, Maria Cinta; Díaz, Francesc

2017-02-20

We report mid-infrared LiNbO₃ depressed-index microstructured cladding waveguides fabricated by three-dimensional laser writing showing low propagation losses (~1.5 dB/cm) at 3.68 µm wavelength for both the transverse electric and magnetic polarized modes, a feature previously unachieved due to the strong anisotropic properties of this type of laser microstructured waveguides and which is of fundamental importance for many photonic applications. Using a heuristic modeling-testing iteration design approach which takes into account cladding induced stress-optic index changes, the fabricated cladding microstructure provides low-loss single mode operation for the mid-IR for both orthogonal polarizations. The dependence of the localized refractive index changes within the cladding microstructure with post-fabrication thermal annealing processes was also investigated, revealing its complex dependence of the laser induced refractive index changes on laser fabrication conditions and thermal post-processing steps. The waveguide modes properties and their dependence on thermal post-processing were numerically modeled and fitted to the experimental values by systematically varying three fundamental parameters of this type of waveguides: depressed refractive index values at sub-micron laser-written tracks, track size changes, and piezo-optic induced refractive index changes.

Segmental and local dynamics of stacked thin films of poly(methyl methacrylate)

NASA Astrophysics Data System (ADS)

Hayashi, Tatsuhiko; Fukao, Koji

2014-02-01

The glass transition temperature and the dynamics of the α and β processes have been investigated using differential scanning calorimetry and dielectric relaxation spectroscopy during successive annealing processes above the glass transition temperature for stacked thin films of poly(methyl methacrylate) (PMMA) of various thicknesses. The glass transition temperature and the dynamics of the α process (segmental motion) of as-stacked PMMA thin films exhibit thin-film-like behavior, insofar as the glass transition temperature is depressed and the dynamics of the α process are faster than those of the bulk system. Annealing at high temperature causes the glass transition temperature to increase from the reduced value and causes the dynamics of the α process to become slower approaching those of the bulk. Contrary to the segmental motion, the relaxation time of the β process (local motion) of the stacked PMMA thin films is almost equal to that of the bulk PMMA and is unaffected by the annealing process. However, the relaxation strengths of both the α process and β process show a strong correlation between each other. The sum of the relaxation strengths remains almost unchanged, while the individual relaxation strengths change during the annealing process. The fragility index of the stacked PMMA thin films increases with annealing, which suggests that the glassy state of the stacked thin films changes from strong to fragile.

GRCop-84 Rolling Parameter Study

NASA Technical Reports Server (NTRS)

Loewenthal, William S.; Ellis, David L.

2008-01-01

This report is a section of the final report on the GRCop-84 task of the Constellation Program and incorporates the results obtained between October 2000 and September 2005, when the program ended. NASA Glenn Research Center (GRC) has developed a new copper alloy, GRCop-84 (Cu-8 at.% Cr-4 at.% Nb), for rocket engine main combustion chamber components that will improve rocket engine life and performance. This work examines the sensitivity of GRCop-84 mechanical properties to rolling parameters as a means to better define rolling parameters for commercial warm rolling. Experiment variables studied were total reduction, rolling temperature, rolling speed, and post rolling annealing heat treatment. The responses were tensile properties measured at 23 and 500 C, hardness, and creep at three stress-temperature combinations. Understanding these relationships will better define boundaries for a robust commercial warm rolling process. The four processing parameters were varied within limits consistent with typical commercial production processes. Testing revealed that the rolling-related variables selected have a minimal influence on tensile, hardness, and creep properties over the range of values tested. Annealing had the expected result of lowering room temperature hardness and strength while increasing room temperature elongations with 600 C (1112 F) having the most effect. These results indicate that the process conditions to warm roll plate and sheet for these variables can range over wide levels without negatively impacting mechanical properties. Incorporating broader process ranges in future rolling campaigns should lower commercial rolling costs through increased productivity.

Effect of Annealing Treatment on Mechanical Properties of Nanocrystalline α-iron: an Atomistic Study

PubMed Central

Tong, Xuhang; Zhang, Hao; Li, D. Y.

2015-01-01

Claims are often found in the literature that metallic materials can be nanocrystallized by severe plastic deformation (SPD). However, SPD does not generate a well-defined nanocrystalline (NC) material, which can be achieved by subsequent annealing/recovery treatment. In this study, molecular dynamics (MD) simulation is employed to study the effect of annealing on structure and mechanical properties of cyclic deformed NC α-iron, which simulates SPD-processed α-iron. It is demonstrated that grain boundaries in the deformed NC α-iron evolve to a more equilibrium state during annealing, eliminating or minimizing the residual stress. The annealing treatment increases the system's strength by reducing dislocation emission sources, and improves material ductility through strengthening grain boundaries' resistance to intergranular cracks. The results indicate that the annealing treatment is an essential process for obtaining a well-defined NC structure with superior mechanical properties. PMID:25675978

Novel thermal annealing methodology for permanent tuning polymer optical fiber Bragg gratings to longer wavelengths.

PubMed

Pospori, A; Marques, C A F; Sagias, G; Lamela-Rivera, H; Webb, D J

2018-01-22

The Bragg wavelength of a polymer optical fiber Bragg grating can be permanently shifted by utilizing the thermal annealing method. In all the reported fiber annealing cases, the authors were able to tune the Bragg wavelength only to shorter wavelengths, since the polymer fiber shrinks in length during the annealing process. This article demonstrates a novel thermal annealing methodology for permanently tuning polymer optical fiber Bragg gratings to any desirable spectral position, including longer wavelengths. Stretching the polymer optical fiber during the annealing process, the period of Bragg grating, which is directly related with the Bragg wavelength, can become permanently longer. The methodology presented in this article can be used to multiplex polymer optical fiber Bragg gratings at any desirable spectral position utilizing only one phase-mask for their photo-inscription, reducing thus their fabrication cost in an industrial setting.

Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing.

PubMed

Lu, Qifeng; Zhao, Chun; Mu, Yifei; Zhao, Ce Zhou; Taylor, Stephen; Chalker, Paul R

2015-07-29

A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111) substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD). The results indicated that: (1) more traps were observed compared to the conventional capacitance-voltage characterization method in LaZrO x ; (2) the time-dependent trapping/de-trapping was influenced by the edge time, width and peak-to-peak voltage of a gate voltage pulse. Post deposition annealing was performed at 700 °C, 800 °C and 900 °C in N₂ ambient for 15 s to the samples with 200 ALD cycles. The effect of the high temperature annealing on oxide traps and leakage current were subsequently explored. It showed that more traps were generated after annealing with the trap density increasing from 1.41 × 10 12 cm -2 for as-deposited sample to 4.55 × 10 12 cm -2 for the 800 °C annealed one. In addition, the leakage current density increase from about 10 - ⁶ A/cm² at V g = +0.5 V for the as-deposited sample to 10 -3 A/cm² at V g = +0.5 V for the 900 °C annealed one.

TiOx-based thin-film transistors prepared by femtosecond laser pre-annealing

NASA Astrophysics Data System (ADS)

Shan, Fei; Kim, Sung-Jin

2018-02-01

We report on thin-film transistors (TFTs) based on titanium oxide (TiOx) prepared using femtosecond laser pre-annealing for electrical application of n-type channel oxide transparent TFTs. Amorphous TFTs using TiOx semiconductors as an active layer have a low-temperature process and show remarkable electrical performance. And the femtosecond laser pre-annealing process has greater flexibility and development space for semiconductor production activity, with a fast preparation method. TFTs with a TiOx semiconductor pre-annealed via femtosecond laser at 3 W have a pinhole-free and smooth surface without crystal grains.

Pattern Laser Annealing by a Pulsed Laser

NASA Astrophysics Data System (ADS)

Komiya, Yoshio; Hoh, Koichiro; Murakami, Koichi; Takahashi, Tetsuo; Tarui, Yasuo

1981-10-01

Preliminary experiments with contact-type pattern laser annealing were made for local polycrystallization of a-Si, local evaporation of a-Si and local formation of Ni-Si alloy. These experiments showed that the mask patterns can be replicated as annealed regions with a resolution of a few microns on substrates. To overcome shortcomings due to the contact type pattern annealing, a projection type reduction pattern laser annealing system is proposed for resistless low temperature pattern forming processes.

Enhanced reactivity of nanoscale iron particles through a vacuum annealing process

NASA Astrophysics Data System (ADS)

Riba, Olga; Barnes, Robert J.; Scott, Thomas B.; Gardner, Murray N.; Jackman, Simon A.; Thompson, Ian P.

2011-10-01

A reactivity study was undertaken to compare and assess the rate of dechlorination of chlorinated aliphatic hydrocarbons (CAHs) by annealed and non-annealed nanoscale iron particles. The current study aims to resolve the uncertainties in recently published work studying the effect of the annealing process on the reduction capability of nanoscale Fe particles. Comparison of the normalized rate constants (m2/h/L) obtained for dechlorination reactions of trichloroethene (TCE) and cis-1,2-dichloroethene (cis-1,2-DCE) indicated that annealing nanoscale Fe particles increases their reactivity 30-fold. An electron transfer reaction mechanism for both types of nanoscale particles was found to be responsible for CAH dechlorination, rather than a reduction reaction by activated H2 on the particle surface (i.e., hydrogenation, hydrogenolysis). Surface analysis of the particulate material using X-ray diffraction (XRD) and transmission electron microscopy (TEM) together with surface area measurement by Brunauer, Emmett, Teller (BET) indicate that the vacuum annealing process decreases the surface area and increases crystallinity. BET surface area analysis recorded a decrease in nanoscale Fe particle surface area from 19.0 to 4.8 m2/g and crystallite dimensions inside the particle increased from 8.7 to 18.2 nm as a result of annealing.

Effect of annealing temperature on the properties of copper oxide films prepared by dip coating technique

NASA Astrophysics Data System (ADS)

Raship, N. A.; Sahdan, M. Z.; Adriyanto, F.; Nurfazliana, M. F.; Bakri, A. S.

2017-01-01

Copper oxide films were grown on silicon substrates by sol-gel dip coating method. In order to study the effects of annealing temperature on the properties of copper oxide films, the temperature was varied from 200 °C to 450 °C. In the process of dip coating, the substrate is withdrawn from the precursor solution with uniform velocity to obtain a uniform coating before undergoing an annealing process to make the copper oxide film polycrystalline. The physical properties of the copper oxide films were measured by an X-ray diffraction (XRD), a field emission scanning electron microscope (FESEM), an atomic force microscopy (AFM) and a four point probe instrument. From the XRD results, we found that pure cuprite (Cu2O) phase can be obtained by annealing the films annealed at 200 °C. Films annealed at 300 °C had a combination phase which consists of tenorite (CuO) and cuprite (Cu2O) phase while pure tenorite (CuO) phase can be obtained at 450 °C annealing temperature. The surface microstructure showed that the grains size is increased whereas the surface roughness is increased and then decreases by increasing in annealing temperature. The films showed that the resistivity decreased with increasing annealing temperature. Consequently, it was observed that annealing temperature has strong effects on the structural, morphological and electrical properties of copper oxide films.

The Mechanical Property of Batch Annealed High Strength Low Alloy Steel HC260LA

NASA Astrophysics Data System (ADS)

Yang, Xiaojiang; Xia, Mingsheng; Zhang, Hongbo; Han, Bin; Li, Guilan

Cold rolled high strength low alloy steel is widely applied in the automotive parts due to its excellent formability and weldability. In this paper, the steel grade HC260LA according to European Norm was developed with batch annealing process. With commercial C-Mn mild steel as a benchmark, three different groups of chemistry namely C-Mn-Si, C-Mn-Nb-Ti and C-Mn-Nb were compared in terms of yield-tensile strength (Y/T) ratio. Microstructure and mechanical properties were characterized as well. Based on industrial production results, chemistry and detailed process parameters for batch annealing were identified. In the end the optimal Y/T ratio was proposed for this steel grade under batch annealing process.

Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

NASA Technical Reports Server (NTRS)

Danchenko, V.; Fang, P. H.; Brashears, S. S.

1982-01-01

Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

Low-temperature volume radiation annealing of cold-worked bands of Al-Li-Cu-Mg alloy by 20-40 keV Ar+ ion

NASA Astrophysics Data System (ADS)

Ovchinnikov, V. V.; Gushchina, N. V.; Mozharovsky, S. M.; Kaigorodova, L. I.

2017-01-01

The processes of radiation-dynamic nature (in contrast to the thermally-activated processes) in the course of short-term irradiation of 1 mm thick bands of cold-worked aluminum alloy 1441 (of system Al-Li-Cu-Mg) with Ar+ 20-40 keV were studied. An effect of in-the-bulk (throughout the whole of metal bands thickness) low-temperature radiation annealing of the named alloy, multiply accelerated as compared with common thermal annealing processes was registered (with projected ranges of ions of considered energies definitely not exceeding 0.1 μm). The processes of recrystallization and intermetallic structure changes (occurring within a few seconds of Ar+ irradiation) have the common features as well as the differences in comparison with the results of two hour standard thermal annealing.

Development of Annealing-Free, Solution-Processable Inverted Organic Solar Cells with N-Doped Graphene Electrodes using Zinc Oxide Nanoparticles.

PubMed

Jung, Seungon; Lee, Junghyun; Seo, Jihyung; Kim, Ungsoo; Choi, Yunseong; Park, Hyesung

2018-02-14

An annealing-free process is considered as a technological advancement for the development of flexible (or wearable) organic electronic devices, which can prevent the distortion of substrates and damage to the active components of the device and simplify the overall fabrication process to increase the industrial applications. Owing to its outstanding electrical, optical, and mechanical properties, graphene is seen as a promising material that could act as a transparent conductive electrode for flexible optoelectronic devices. Owing to their high transparency and electron mobility, zinc oxide nanoparticles (ZnO-NP) are attractive and promising for their application as charge transporting materials for low-temperature processes in organic solar cells (OSCs), particularly because most charge transporting materials require annealing treatments at elevated temperatures. In this study, graphene/annealing-free ZnO-NP hybrid materials were developed for inverted OSC by successfully integrating ZnO-NP on the hydrophobic surface of graphene, thus aiming to enhance the applicability of graphene as a transparent electrode in flexible OSC systems. Chemical, optical, electrical, and morphological analyses of ZnO-NPs showed that the annealing-free process generates similar results to those provided by the conventional annealing process. The approach was effectively applied to graphene-based inverted OSCs with notable power conversion efficiencies of 8.16% and 7.41% on the solid and flexible substrates, respectively, which promises the great feasibility of graphene for emerging optoelectronic device applications.

Influence of Welding Process and Post Weld Heat Treatment on Microstructure and Pitting Corrosion Behavior of Dissimilar Aluminium Alloy Welds

NASA Astrophysics Data System (ADS)

Venkata Ramana, V. S. N.; Mohammed, Raffi; Madhusudhan Reddy, G.; Srinivasa Rao, K.

2018-03-01

Welding of dissimilar Aluminum alloy welds is becoming important in aerospace, shipbuilding and defence applications. In the present work, an attempt has been made to weld dissimilar aluminium alloys using conventional gas tungsten arc welding (GTAW) and friction stir welding (FSW) processes. An attempt was also made to study the effect of post weld heat treatment (T4 condition) on microstructure and pitting corrosion behaviour of these welds. Results of the present investigation established the differences in microstructures of the base metals in T4 condition and in annealed conditions. It is evident that the thickness of the PMZ is relatively more on AA2014 side than that of AA6061 side. In FS welds, lamellar like shear bands are well noticed on the top of the stir zone. The concentration profile of dissimilar friction stir weld in T4 condition revealed that no diffusion has taken place at the interface. Poor Hardness is observed in all regions of FS welds compared to that of GTA welds. Pitting corrosion resistance of the dissimilar FS welds in all regions was improved by post weld heat treatment.

Influence of annealing temperature on the Dy diffusion process in NdFeB magnets

NASA Astrophysics Data System (ADS)

Hu, Sheng-qing; Peng, Kun; Chen, Hong

2017-03-01

Sintered NdFeB magnets were coated with a layer of Dy metal using electron beam evaporation method and then annealed at various temperatures to investigate the temperature dependence of Dy diffusion process in NdFeB magnets. A Dy-rich phase was observed along the grain boundaries after the grain boundary diffusion process, the diffusion coefficients of various temperatures were obtained, the diffusion coefficients of Dy along the grain boundaries at 800 °C and 900 °C were determined to be 9.8×10-8 cm2 s-1 and 2.4×10-7 cm2 s-1, respectively. The diffusion length depended on the annealing temperature and the maximum diffusion length of approximately 1.8 mm and 3.0 mm can be obtained after annealing at 800 °C and 900 °C for 8 h. Higher diffusion temperature results in the diffusion not only along the grain boundaries but also into grains and then decrease in magnetic properties. The optimum annealing conditions can be determined as 900 °C for 8 h. The coercivity was improved from 1040 kA/m to 1450 kA/m and its magnetization has no significant reduction after the grain boundary diffusion process at the optimum annealing conditions.

Post-growth annealing of germanium-tin alloys using pulsed excimer laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lanxiang; Wang, Wei; Zhou, Qian

2015-07-14

We investigate the impact of pulsed excimer laser anneal on fully strained germanium-tin alloys (Ge{sub 1−x}Sn{sub x}) epitaxially grown on Ge substrate by molecular beam epitaxy. Using atomic force microscopy, X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy, the morphological and compositional evolution of Ge{sub 1−x}Sn{sub x} with Sn content up to 17% after annealing using various conditions is studied. Ge{sub 0.83}Sn{sub 0.17} samples annealed at 80 mJ/cm{sup 2} or 150 mJ/cm{sup 2} have no observable changes with respect to the as-grown sample. However, Ge{sub 0.83}Sn{sub 0.17} samples annealed at 250 mJ/cm{sup 2} or 300 mJ/cm{sup 2} have Sn-richmore » islands on the surface, which is due to Sn segregation in the compressively strained epitaxial film. For Ge{sub 0.89}Sn{sub 0.11}, significant Sn redistribution occurs only when annealed at 300 mJ/cm{sup 2}, indicating that it has better thermal stability than Ge{sub 0.83}Sn{sub 0.17}. A mechanism is proposed to explain the formation of Sn-rich islands and Sn-depleted regions.« less

Terahertz detectors from Be-doped low-temperature grown InGaAs/InAlAs: Interplay of annealing and terahertz performance

NASA Astrophysics Data System (ADS)

Globisch, B.; Dietz, R. J. B.; Nellen, S.; Göbel, T.; Schell, M.

2016-12-01

The influence of post-growth annealing on the electrical properties, the transient carrier dynamics and the performance as THz photoconductive receiver of Beryllium (Be) doped InGaAs/InAlAs multilayer heterostructures grown at 130 °C in a molecular beam epitaxy (MBE) system was investigated. We studied samples with nominally Be doping concentrations of 8 ×10 17 cm-3 - 1.2 ×1019 cm3 annealed for 15 min. - 120 min. at temperatures between 500 °C - 600 °C. In contrast to previous publications, the results show consistently that annealing increases the electron lifetime of the material. In analogy to the annealing properties of low-temperature grown (LTG) GaAs we explain our findings by the precipitation of arsenic antisite defects. The knowledge of the influence of annealing on the material properties allowed for the fabrication of broadband THz photoconductive receivers with an electron lifetime below 300 fs and varying electrical properties. We found that the noise of the detected THz pulse trace in time-domain spectroscopy (TDS) was directly determined by the resistance of the photoconductive receiver and the peak-to-peak amplitude of the THz pulse correlated with the electron mobility.

Different annealing temperature suitable for different Mg doped P-GaN

NASA Astrophysics Data System (ADS)

Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.

2017-04-01

In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.

Homogenization of CZ Si wafers by Tabula Rasa annealing

NASA Astrophysics Data System (ADS)

Meduňa, M.; Caha, O.; Kuběna, J.; Kuběna, A.; Buršík, J.

2009-12-01

The precipitation of interstitial oxygen in Czochralski grown silicon has been investigated by infrared absorption spectroscopy, chemical etching, transmission electron microscopy and X-ray diffraction after application of homogenization annealing process called Tabula Rasa. The influence of this homogenization step consisting in short time annealing at high temperature has been observed for various temperatures and times. The experimental results involving the interstitial oxygen decay in Si wafers and absorption spectra of SiOx precipitates during precipitation annealing at 1000∘ C were compared with other techniques for various Tabula Rasa temperatures. The differences in oxygen precipitation, precipitate morphology and evolution of point defects in samples with and without Tabula Rasa applied is evident from all used experimental techniques. The results qualitatively correlate with prediction of homogenization annealing process based on classical nucleation theory.

Efficient optical activation of Eu3+ ions doped in ZnGa2O4 thin films: Correlation between crystalline phase and photoluminescence

NASA Astrophysics Data System (ADS)

Akazawa, Housei; Shinojima, Hiroyuki

2018-06-01

The physicochemical properties of Eu-doped zinc gallate (ZnGaxO1+1.5x:Eu) (1 < x < 6) thin films were investigated by means of photoluminescence (PL) triggered by band-to-band transitions of the host crystal at λ = 325 nm. Close correspondence between PL spectra and crystalline phases was verified by performing combinatorial measurements over four-inch substrates on which there was a spread of Ga/Zn composition ratios. The phase formation kinetics for deposition with H2O as an oxygen source gas followed by post annealing were similar to those of hydrothermal synthesis. ZnGa2O4 preferentially formed for a wide range of compositions between 1 < x < 4 and post annealing temperatures between 400 and 800 °C; intense emissions from Eu3+ ions were observed from the films. In contrast, the phase formation kinetics for deposition with O2 gas followed by post annealing were similar to those of solid-state reactions. Vacuum annealing above 500 °C caused preferential losses of Ga atoms and precipitation of Zn2Ga2O5 crystallites at x < 4, whereas ZnGa2O4 formed when a large amount of Ga (x > 6) was initially contained in the as-deposited state. The resulting PL spectra from Zn2Ga2O5 exhibited only a broad emission band from 450 to 700 nm, which was ascribed to defects in the poorly crystallized Zn:Ga = 1:1 phase. When the films deposited with O2 were post annealed in an O2 ambient, Zn atoms were lost, producing β-Ga2O3 as the primary phase accompanied with ZnGa2O4. The resulting Eu3+ emission was very weak, possibly because the Eu3+ ions attached to Ga2O3 domains were not emission-active and/or could not be efficiently excited due to wide bandgap (5 eV). When ZnGa2O4:Eu films were crystallized during deposition at elevated temperatures, weak emissions only from Eu3+ ions were observed. Taken together, these experimental results indicate that Eu3+ ions attached to ZnGa2O4 are highly emission-active; i.e., ZnGa2O4 is a particularly good host crystal with which to secure optical activation of doped Eu3+ ions.

Applying Thienyl Side Chains and Different π-Bridge to Aromatic Side-Chain Substituted Indacenodithiophene-Based Small Molecule Donors for High-Performance Organic Solar Cells.

PubMed

Wang, Jin-Liang; Liu, Kai-Kai; Liu, Sha; Liu, Feng; Wu, Hong-Bin; Cao, Yong; Russell, Thomas P

2017-06-14

A pair of linear tetrafluorinated small molecular donors, named as ThIDTTh4F and ThIDTSe4F, which are with tetrathienyl-substituted IDT as electron-rich central core, electron-deficient difluorobenzothiadiazole as acceptor units, and donor end-capping groups, but having differences in the π-bridge (thiophene and selenophene), were successfully synthesized and evaluated as donor materials in organic solar cells. Such π-bridge and core units in these small molecules play a decisive role in the formation of the nanoscale separation of the blend films, which were systematically investigated through absorption spectra, grazing incidence X-ray diffraction pattern, transmission electron microscopy images, resonant soft X-ray scattering profiles, and charge mobility measurement. The ThIDTSe4F (with selenophene π-bridge)-based device exhibited superior performance than devices based on ThIDTh4F (with thiophene π-bridge) after post annealing treatment owing to optimized film morphology and improved charge transport. Power conversion efficiency of 7.31% and fill factor of ∼0.70 were obtained by using a blend of ThIDTSe4F and PC 71 BM with thermal annealing and solvent vapor annealing treatments, which is the highest PCE from aromatic side-chain substituted IDT-based small molecular solar cells. The scope of this study is to reveal the structure-property relationship of the aromatic side-chain substituted IDT-based donor materials as a function of π-bridge and the post annealing conditions.

Effects of substrate heating and post-deposition annealing on characteristics of thin MOCVD HfO2 films

NASA Astrophysics Data System (ADS)

Gopalan, Sundararaman; Ramesh, Sivaramakrishnan; Dutta, Shibesh; Virajit Garbhapu, Venkata

2018-02-01

It is well known that Hf-based dielectrics have replaced the traditional SiO2 and SiON as gate dielectric materials for conventional CMOS devices. By using thicker high-k materials such as HfO2 rather than ultra-thin SiO2, we can bring down leakage current densities in MOS devices to acceptable levels. HfO2 is also one of the potential candidates as a blocking dielectric for Flash memory applications for the same reason. In this study, effects of substrate heating and oxygen flow rate while depositing HfO2 thin films using CVD and effects of post deposition annealing on the physical and electrical characteristics of HfO2 thin films are presented. It was observed that substrate heating during deposition helps improve the density and electrical characteristics of the films. At higher substrate temperature, Vfb moved closer to zero and also resulted in significant reduction in hysteresis. Higher O2 flow rates may improve capacitance, but also results in slightly higher leakage. The effect of PDA depended on film thickness and O2 PDA improved characteristics only for thick films. For thinner films forming gas anneal resulted in better electrical characteristics.

Effect of diffusion annealing regimes on the structure of Nb3Sn layers in ITER-type bronze-processed wires

NASA Astrophysics Data System (ADS)

Valova-Zaharevskaya, E. G.; Popova, E. N.; Deryagina, I. L.; Abdyukhanov, I. M.; Tsapleva, A. S.

2018-03-01

The goal of the present study is to characterize the growth kinetics and structural parameters of the Nb3Sn layers formed under various regimes of the diffusion annealing of bronze-processed Nb/Cu-Sn composites. The structure of the superconducting layers is characterized by their thickness, average size of equiaxed grains and by the ratio of fractions of columnar and equiaxed grains. It was found that at higher diffusion annealing temperatures (above 650°C) thicker superconducting layers are obtained, but the average sizes of equiaxed Nb3Sn grains even under short exposures (10 h) are much larger than after the long low-temperature annealing. At the low-temperature (575 °C) annealing the relative fraction of columnar grains increases with increasing annealing time. Based on the data obtained, optimal regimes of the diffusion annealing can be chosen, which would on the one hand ensure complete transformation of Nb into Nb3Sn of close to the stoichiometric composition, and on the other hand prevent the formation of coarse and columnar grains.

Full Sputtering Deposition of Thin Film Solar Cells: A Way of Achieving High Efficiency Sustainable Tandem Cells?

NASA Astrophysics Data System (ADS)

Vilcot, J.-P.; Ayachi, B.; Aviles, T.; Miska, P.

2017-11-01

In the first part of this paper, we will show that a sputtering-based fabrication process exhibiting a low environmental footprint has been developed for the fabrication of copper indium gallium selenide (CIGS) absorbing material. Its originality lies in using room temperature sputtering in a pulsed—direct current mode of a single quaternary target followed by a post-anneal. At any stage of the process, selenium or sulfur atmosphere is used. Inert gas is used, respectively argon and a forming gas, for the deposition and annealing step, respectively. CIGS cells have been fabricated using such an absorbing layer. They exhibit an efficiency close to 12%. A tandem cell approach, using a thin film technology in conjunction with the well-established Si technology, is a promising technique, achieving cells with 30%, and higher, efficiency. Such cells are awaited, jointly with a stronger implementation of low environmental footprint technologies, as a vision for 2030. In the first section, sputtering technique has shown its ability to be developed in such a way achieving an environmentally friendly process that can be moreover compatible to be co-integrated with, for example, Si technology. In a second section, we will present a prospective discussion on the materials that can be applied to produce a sustainable approach for such a tandem cell configuration.

Comparison Between Different Processing Schedules for the Development of Ultrafine-Grained Dual-Phase Steel

NASA Astrophysics Data System (ADS)

Karmakar, Anish; Sivaprasad, S.; Nath, S. K.; Misra, R. D. K.; Chakrabarti, Debalay

2014-05-01

A comparative study was carried out on the development of ultrafine-grained dual-phase (DP) (ferrite-martensite) structures in a low-carbon microalloyed steel processed using two thermomechanical processing routes, (i) intercritical deformation and (ii) warm-deformation and intercritical annealing. The samples were deformed using Gleeble3500® simulator, maintaining a constant total strain ( ɛ = 1) and strain rate ( = 1/s). Evolution of microstructure and micro-texture was investigated by SEM, TEM, and EBSD. Ultrafine-grained DP structures could be formed by careful selection of deformation temperature, T def (for intercritical deformation) or annealing temperature, T anneal (for warm-deformation and annealing). Overall, the ferrite grain sizes ranged from 1.5 to 4.0 μm, and the sizes and fractions of the uniformly distributed fine-martensitic islands ranged from 1.5 to 3.0 μm and 15 to 45 pct, respectively. Dynamic strain-induced austenite-to-ferrite transformation followed by continuous (dynamic) recrystallization of the ferrite dictated the grain refinement during intercritical deformation, while, continuous (static) recrystallization by pronounced recovery dictated the grain refinement during the warm-deformation and the annealing. Regarding intercritical deformation, the samples cooled to T def indicated finer grain size compared with the samples heated to T def, which are explained in terms of the effects of strain partitioning on the ferrite and the heating during deformation. Alpha-fiber components dominated the texture in all the samples, and the fraction of high-angle boundaries (with >15 deg misorientation) increased with the increasing T def or T anneal, depending on the processing schedule. Fine carbide particles, microalloyed precipitates and austenitic islands played important roles in defining the mechanism of grain refinement that involved retarding conventional ferrite recrystallization and ferrite grain growth. With regard to the intercritical deformation, warm-deformation followed by annealing is a simpler process to control in the rolling mill; however, the need for high-power rolling mill and controlled annealing facility imposes industrial challenges.

Sputtered magnesium diboride thin films: Growth conditions and surface morphology

NASA Astrophysics Data System (ADS)

O'Brien, April; Villegas, Brendon; Gu, J. Y.

2009-01-01

Magnesium diboride (MgB 2) thin films were deposited on C-plane sapphire substrates by sputtering pure B and Mg targets at different substrate temperatures, and were followed by in situ annealing. A systematic study about the effects of the various growth and annealing parameters on the physical properties of MgB 2 thin films showed that the substrate temperature is the most critical factor that determines the superconducting transition temperature ( Tc), while annealing plays a minor role. There was no superconducting transition in the thin films grown at room temperature without post-annealing. The highest Tc of the samples grown at room temperature after the optimized annealing was 22 K. As the temperature of the substrate ( Ts) increased, Tc rose. However, the maximum Ts was limited due to the low magnesium sticking coefficient and thus the Tc value was limited as well. The highest Tc, 29 K, was obtained for the sample deposited at 180 °C, annealed at 620 °C, and was subsequently annealed a second time at 800 °C. Three-dimensional (3D) AFM images clearly demonstrated that the thin films with no transition, or very low Tc, did not have the well-developed MgB 2 grains while the films with higher Tc displayed the well-developed grains and smooth surface. Although the Tc of sputtered MgB 2 films in the current work is lower than that for the bulk and ex situ annealed thin films, this work presents an important step towards the fabrication of MgB 2 heterostructures using rather simple physical vapor deposition method such as sputtering.

Sensitizing properties of luminescence centers on the emission of Er3+ in Si-rich SiO2 film

NASA Astrophysics Data System (ADS)

Fu, Qianyu; Gao, Yuhan; Li, Dongsheng; Yang, Deren

2016-05-01

In this paper, we report on the luminescence-center (LC)-mediated excitation of Er3+ as a function of annealing temperature in Er-doped Si-rich SiO2 (SRO) films fabricated by electron beam evaporation. It is found that the annealing temperature has significant effects on the emission of Er3+ and the specific optical-active point-defects called LCs within Er-doped SRO films. Different luminescence centers generated by the evolution of microstructures during annealing process act as efficient sensitizers for Er3+ in the films when the annealing temperature is below 1100 °C. Moreover, the temperature dependence of the energy coupling between LCs and Er3+ demonstrates the effective phonon-mediated energy transfer process. In addition, when the annealing temperature reaches 1100 °C, the decreased density of activable erbium ions induced by the aggregation of Er will bring detrimental effects on the emission of Er3+. It is demonstrated that an appropriate annealing process can be designed to achieve efficiently enhanced emissions from Er3+ ions by optimizing the density of LCs and the coupling between Er3+ and LCs.

Characterization of nanostructured VO2 thin films grown by magnetron controlled sputtering deposition and post annealing method.

PubMed

Chen, Sihai; Lai, Jianjun; Dai, Jun; Ma, Hong; Wang, Hongchen; Yi, Xinjian

2009-12-21

By magnetron controlled sputtering system, a new nanostructured metastable monoclinic phase VO2 (B) thin film has been fabricated. The testing result shows that this nanostructured VO2 (B) thin film has high temperature coefficient of resistance (TCR) of -7%/K. Scanning electron microscopy measurement shows that the average grain diameter of the VO2 (B) crystallite is between 100 and 250 nm. After post annealed, VO2 (B) crystallite is changed into monoclinic (M) phase VO2 (M) crystallite with the average grain diameter between 20 and 50 nm. A set up of testing the thin film switching time is established. The test result shows the switching time is about 50 ms. With the nanostructured VO2 (B) and VO2 (M) thin films, optical switches and high sensitivity detectors will be presented.

Electronic and Optical Properties of Atomic Layer-Deposited ZnO and TiO2

NASA Astrophysics Data System (ADS)

Ates, H.; Bolat, S.; Oruc, F.; Okyay, A. K.

2018-05-01

Metal oxides are attractive for thin film optoelectronic applications. Due to their wide energy bandgaps, ZnO and TiO2 are being investigated by many researchers. Here, we have studied the electrical and optical properties of ZnO and TiO2 as a function of deposition and post-annealing conditions. Atomic layer deposition (ALD) is a novel thin film deposition technique where the growth conditions can be controlled down to atomic precision. ALD-grown ZnO films are shown to exhibit tunable optical absorption properties in the visible and infrared region. Furthermore, the growth temperature and post-annealing conditions of ZnO and TiO2 affect the electrical properties which are investigated using ALD-grown metal oxide as the electron transport channel on thin film field-effect devices.

Effect of annealing on the structural and optical properties of TiO2 powder prepared by sol-gel route

NASA Astrophysics Data System (ADS)

Halder, Nilanjan; Misra, Kamakhya Prakash

2016-05-01

Using titanium isopropoxide as the precursor, Titanium dioxide (TiO2) powder was synthesized via sol-gel method, a promising low temperature route for preparing nanosized metal oxide semiconductors with good homogeneity at low cost. The as-prepared nano powder was thermally treated in air at 550, 650, 750, 900 and 1100°C for 1hr after drying at room temperature and used for further characterization. X-ray diffraction measurements showed that the annealing treatment has a strong impact on the crystal phase of TiO2 samples. The crystallite size as calculated from Debye Scherer formula lies in the range 29-69 nm and is found to increase with increase in annealing temperature. Photoluminescence studies exhibit an improvement in the optical efficiency of the samples with post synthesis heat treatment. Annealing at temperature above 900°C results in a degradation of the structural and optical quality of the TiO2 nano powder samples.

The effect of annealing on structural and optical properties of α-Fe2O3/CdS/α-Fe2O3 multilayer heterostructures

NASA Astrophysics Data System (ADS)

Saleem, M.; Durrani, S. M. A.; Saheb, N.; Al-Kuhaili, M. F.; Bakhtiari, I. A.

2014-11-01

Multilayered thin film heterostructures of α-Fe2O3/CdS/α-Fe2O3 were prepared through physical vapor deposition. Each α-Fe2O3 layer was deposited by e-beam evaporation of iron in an oxygen atmosphere. The CdS layer was deposited by thermal evaporation in a vacuum. The effect of post annealing of multilayered thin films in air in the temperature range 250 °C to 450 °C was investigated. Structural characterization indicated the growth of the α-Fe2O3 phase with a polycrystalline structure without any CdS crystalline phase. As-deposited multilayer heterostructures were amorphous and transformed into polycrystalline upon annealing. The surface modification of the films during annealing was revealed by scanning electron microscopy. Spectrophotometric measurements were used to determine the optical properties, including the transmittance, absorbance, and band gap. All the films had both direct as well as indirect band gaps.

Influence of growth flux solvent on anneal-tuning of ground states in CaFe2As2

NASA Astrophysics Data System (ADS)

Roncaioli, Connor; Drye, Tyler; Saha, Shanta R.; Paglione, Johnpierre

2018-04-01

The effects of anneal-tuning of single-crystalline samples of CaFe2As2 synthesized via a molten Sn-flux method are investigated using x-ray diffraction, chemical composition, electrical transport, and magnetic susceptibility measurements in order to understand the role of growth conditions on the resultant phase diagram. Previous studies of CaFe2As2 crystals synthesized using a self-flux (FeAs) method revealed an ability to tune the structural and magnetic properties of this system by control of post-synthesis annealing conditions, resulting in an ambient pressure phase diagram that spans from tetragonal/orthorhombic antiferromagnetism to the collapsed tetragonal phase of this system. In this work, we compare previous results to those obtained on crystals synthesized via Sn flux, finding similar tunability in both self- and Sn-flux cases, but less sensitivity to annealing temperatures in the latter case, resulting in a temperature-shifted phase diagram.

Radiation damage in lithium-counterdoped n/p silicon solar cells

NASA Technical Reports Server (NTRS)

Hermann, A. M.; Swartz, C. K.; Brandhorst, H. W., Jr.; Weinberg, I.

1980-01-01

Lithium counterdoped n+/p silicon solar cells were irradiated with 1 MV electrons and their post irradiation performance and low temperature annealing properties were compared to that of the 0.35 ohm cm control cells. Cells fabricated from float zone and Czochralski grown silicon were investigated. It was found that the float zone cells exhibited superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Room temperature and 60 C annealing studies were conducted. The annealing was found to be a combination of first and second order kinetics for short times. It was suggested that the principal annealing mechanism was migration of lithium to a radiation induced defect with subsequent neutralization of the defect by combination with lithium. The effects of base lithium gradient were investigated. It was found that cells with negative base lithium gradients exhibited poor radiation resistance and performance compared to those with positive or no lithium gradients; the latter being preferred for overall performance and radiation resistance.

High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide

NASA Astrophysics Data System (ADS)

Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

1992-05-01

High resolution x-ray diffraction methods have been used to characterize GaAs grown at low substrate temperatures by molecular beam epitaxy and to examine the effects of post-growth annealing on the structure of the layers. Double crystal rocking curves from the as-deposited epitaxial layer show well-defined interference fringes, indicating a high level of structural perfection despite the presence of excess arsenic. Annealing at temperatures from 700 to 900 °C resulted in a decrease in the perpendicular lattice mismatch between the GaAs grown at low temperature and the substrate from 0.133% to 0.016% and a decrease (but not total elimination) of the visibility of the interference fringes. Triple-crystal diffraction scans around the 004 point in reciprocal space exhibited an increase in the apparent mosaic spread of the epitaxial layer with increasing anneal temperature. The observations are explained in terms of the growth of arsenic precipitates in the epitaxial layer.

Effects of post-annealing treatment on the structure and photoluminescence properties of CdS/PS nanocomposites prepared by sol-gel method

NASA Astrophysics Data System (ADS)

Zhang, Hong-yan

2016-03-01

CdS nanocrystals have been successfully grown on porous silicon (PS) by sol-gel method. The plan-view field emission scanning electron microscopy (FESEM) shows that the pore size of PS is smaller than 5 μm in diameter and the agglomerates of CdS are broadly distributed on the surface of PS substrate. With the increase of annealing time, the CdS nanoparticles grow in both length and diameter along the preferred orientation. The cross-sectional FESEM images of ZnO/PS show that CdS nanocrystals are uniformly penetrated into all PS layers and adhere to them very well. photoluminescence (PL) spectra demonstrate that the intensity of PL peak located at about 425 nm has almost no change after the annealing time increases. The range of emission wavelength of CdS/PS is from 425 nm to 455 nm and the PL intensity is decreasing with the annealing temperature increasing from 100 °C to 200 °C.

Atomic layer deposition of VO2 films with Tetrakis-dimethyl-amino vanadium (IV) as vanadium precursor

NASA Astrophysics Data System (ADS)

Lv, Xinrui; Cao, Yunzhen; Yan, Lu; Li, Ying; Song, Lixin

2017-02-01

VO2 thin films have been grown on Si(100) (VO2/Si) and fused silica substrates (VO2/SiO2) by atomic layer deposition (ALD) using tetrakis-dimethyl-amino vanadium (IV) (TDMAV) as a novel vanadium precursor and water as reactant gas. The quartz crystal microbalance (QCM) measurement was performed to study the ALD process of VO2 thin film deposition, and a constant growth rate of about 0.95 Å/cycle was obtained at the temperature range of 150-200 °C. XRD measurement was performed to study the influence of deposition temperature and post-annealing condition on the crystallization of VO2 films, which indicated that the films deposited between 150 and 200 °C showed well crystallinity after annealing at 475 °C for 100 min in Ar atmosphere. XPS measurement verified that the vanadium oxidation state was 4+ for both as-deposited film and post-annealed VO2/Si film. AFM was applied to study the surface morphology of VO2/Si films, which showed a dense polycrystalline film with roughness of about 1 nm. The resistance of VO2/Si films deposited between 150 °C and 200 °C as a function of temperature showed similar semiconductor-to-metal transition (SMT) characters with the transition temperature for heating branch (Tc,h) of about 72 °C, a hysteresis width of about 10 °C and the resistance change of two orders of magnitude. The increase of Tc,h compared with the bulk VO2 (68 °C) may be attributed to the tensile stress along the c-axis in the film. Transmittance measurement of VO2/SiO2 films showed typical thermochromic property with a NIR switching efficiency of above 50% at 2 μm across the transition.

Control of morphology and function of low band gap polymer–bis-fullerene mixed heterojunctions in organic photovoltaics with selective solvent vapor annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Huipeng; Hsiao, Yu-Che; Hu, Bin

2014-05-07

We reported how by replacing PCBM with a bis-adduct fullerene (i.e. ICBA) we significantly improve the open circuit voltage (VOC) and power conversion efficiency (PCE) in P3HT bulk heterojunctions. But, for the most promising low band-gap polymer (LBP) systems, replacing PCBM with ICBA results in very poor shortcircuit current (JSC) and PCE although the VOC is significantly improved. Therefore, in this work, we have completed small angle neutron scattering and neutron reflectometry experiments to study the impact of post-deposition solvent annealing (SA) with control of solvent quality on the morphology and performance of LBP bis-fullerene BHJ photovoltaics. Our results showmore » that SA in a solvent that is selective for the LBP results in a depletion of bis-fullerene near the air surface, which limits device performance. SA in a solvent vapor which has similar solubility for polymer and bis-fullerene results in a higher degree of polymer ordering, bis-fullerene phase separation, and segregation of the bis-fullerene to the air surface, which facilitates charge transport and increases power conversion efficiency (PCE) by 100%. The highest degree of polymer ordering combined with significant bis-fullerene phase separation and segregation of bis-fullerene to the air surface is obtained by SA in a solvent vapor that is selective for the bis-fullerene. The resultant morphology increases PCE by 190%. These results indicate that solvent annealing with judicious solvent choice provides a unique tool to tune the morphology of LBP bisfullerene BHJ system, providing sufficient polymer ordering, formation of a bis-fullerene pure phase, and segregation of bis-fullerene to the air surface to optimize the morphology of the active layer. Furthermore, this process is broadly applicable to improving current disappointing LBP bis-fullerene systems to optimize their morphology and OPV performance post-deposition, including higher VOC and power conversion efficiency.« less

Processing-Structure-Property Relationships in Laser-Annealed PbSe Nanocrystal Thin Films.

PubMed

Treml, Benjamin E; Robbins, Andrew B; Whitham, Kevin; Smilgies, Detlef-M; Thompson, Michael O; Hanrath, Tobias

2015-01-01

As nanocrystal (NC) synthesis techniques and device architectures advance, it becomes increasingly apparent that new ways of connecting NCs with each other and their external environment are required to realize their considerable potential. Enhancing inter-NC coupling by thermal annealing has been a long-standing challenge. Conventional thermal annealing approaches are limited by the challenge of annealing the NC at sufficiently high temperatures to remove surface-bound ligands while at the same time limiting the thermal budget to prevent large-scale aggregation. Here we investigate nonequilibrium laser annealing of NC thin films that enables separation of the kinetic and thermodynamic aspects of nanocrystal fusion. We show that laser annealing of NC assemblies on nano- to microsecond time scales can transform initially isolated NCs in a thin film into an interconnected structure in which proximate dots "just touch". We investigate both pulsed laser annealing and laser spike annealing and show that both annealing methods can produce "confined-but-connected" nanocrystal films. We develop a thermal transport model to rationalize the differences in resulting film morphologies. Finally we show that the insights gained from study of nanocrystal mono- and bilayers can be extended to three-dimensional NC films. The basic processing-structure-property relationships established in this work provide guidance to future advances in creating functional thin films in which constituent NCs can purposefully interact.

Improved perovskite phototransistor prepared using multi-step annealing method

NASA Astrophysics Data System (ADS)

Cao, Mingxuan; Zhang, Yating; Yu, Yu; Yao, Jianquan

2018-02-01

Organic-inorganic hybrid perovskites with good intrinsic physical properties have received substantial interest for solar cell and optoelectronic applications. However, perovskite film always suffers from a low carrier mobility due to its structural imperfection including sharp grain boundaries and pinholes, restricting their device performance and application potential. Here we demonstrate a straightforward strategy based on multi-step annealing process to improve the performance of perovskite photodetector. Annealing temperature and duration greatly affects the surface morphology and optoelectrical properties of perovskites which determines the device property of phototransistor. The perovskite films treated with multi-step annealing method tend to form highly uniform, well-crystallized and high surface coverage perovskite film, which exhibit stronger ultraviolet-visible absorption and photoluminescence spectrum compare to the perovskites prepared by conventional one-step annealing process. The field-effect mobilities of perovskite photodetector treated by one-step direct annealing method shows mobility as 0.121 (0.062) cm2V-1s-1 for holes (electrons), which increases to 1.01 (0.54) cm2V-1s-1 for that treated with muti-step slow annealing method. Moreover, the perovskite phototransistors exhibit a fast photoresponse speed of 78 μs. In general, this work focuses on the influence of annealing methods on perovskite phototransistor, instead of obtains best parameters of it. These findings prove that Multi-step annealing methods is feasible to prepared high performance based photodetector.

Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films.

PubMed

Vandana; Batra, Neha; Gope, Jhuma; Singh, Rajbir; Panigrahi, Jagannath; Tyagi, Sanjay; Pathi, P; Srivastava, S K; Rauthan, C M S; Singh, P K

2014-10-21

Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV <10 cm s(-1)). The deduced values are close to the best reported SRV obtained by the high thermal budget process (with annealing time between 10-30 min), conventionally used for improved surface passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anthony D. Rollett; Hasso Weiland; Mohammed Alvi

Carnegie Mellon University was teamed with the Alcoa Technical Center with support from the US Dept. of Energy (Office of Industrial Technology) and the Pennsylvania Technology Investment Authority (PTIA) to make processing of aluminum less costly and more energy efficient. Researchers in the Department of Materials Science and Engineering have investigated how annealing processes in the early stages of aluminum processing affect the structure and properties of the material. Annealing at high temperatures consumes significant amounts of time and energy. By making detailed measurements of the crystallography and morphology of internal structural changes they have generated new information that willmore » provide a scientific basis for shortening processing times and consuming less energy during annealing.« less

Thermal annealing recovery of fracture toughness in HT9 steel after irradation to high doses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Byun, Thak Sang; Baek, Jong-Hyuk; Anderoglu, Osman

2013-08-03

The HT9 ferritic/martensitic steel with a nominal chemistry of Fe(bal.)–12%Cr–1%MoVW has been used as a primary core material for fast fission reactors such as FFTF because of its high resistance to radiationinduced swelling and embrittlement. Both static and dynamic fracture test results have shown that the HT9 steel can become brittle when it is exposed to high dose irradiation at a relatively low temperature 430 °C). This article aims at a comprehensive discussion on the thermal annealing recovery of fracture toughness in the HT9 steel after irradiation up to 3–148 dpa at 378–504 °C. A specimen reuse technique has beenmore » established and applied to this study: the fracture specimens were tested Charpy specimens or broken halves of Charpy bars (13 3 4 mm). The post-anneal fracture test results indicated that much of the radiation-induced damage can be recovered by a simple thermal annealing schedule: the fracture toughness was incompletely recovered by 550 °C annealing, while nearly complete or complete recovery occurred after 650 °C annealing. This indicates that thermal annealing is a feasible damage mitigation technique for the reactor components made of HT9 steel. The partial recovery is probably due to the non-removable microstructural damages such as void or gas bubble formation, elemental segregation and precipitation.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Zhiqian; Yamamoto, Yukinori

The processability of a Mo-containing FeCrAl alloy (Fe-13Cr-5.2Al-2Mo base, in wt%), developed for accident-tolerant nuclear fuel claddings, was evaluated through a stepwise rolling process at 400 °C under two different inter-pass annealing conditions (i.e., 650 °C for 1 h and at 870 °C for 30 min). The inter-pass annealing at 870 °C easily softened the FeCrAl alloy; however, it led to the formation of coarse grains of ~200 µm. On the other hand, the FeCrAl alloy maintained elongated, deformed grains with the inter-pass annealing at 650 °C, but the annealed samples showed relatively high deformation resistance and strong texture. Importantmore » aspects concerning the processability and microstructural control of FeCrAl alloys, such as deformation inhomogeneity, texture development, and grain coarsening, were discussed. Optimized processing conditions were recommended, based on the results, to achieve desirable microstructures with balanced processability and mechanical properties.« less

Evaluation of the ion implantation process for production of solar cells from silicon sheet materials

NASA Technical Reports Server (NTRS)

Spitzer, M. B.

1983-01-01

The objective of this program is the investigation and evaluation of the capabilities of the ion implantation process for the production of photovoltaic cells from a variety of present-day, state-of-the-art, low-cost silicon sheet materials. Task 1 of the program concerns application of ion implantation and furnace annealing to fabrication of cells made from dendritic web silicon. Task 2 comprises the application of ion implantation and pulsed electron beam annealing (PEBA) to cells made from SEMIX, SILSO, heat-exchanger-method (HEM), edge-defined film-fed growth (EFG) and Czochralski (CZ) silicon. The goals of Task 1 comprise an investigation of implantation and anneal processes applied to dendritic web. A further goal is the evaluation of surface passivation and back surface reflector formation. In this way, processes yielding the very highest efficiency can be evaluated. Task 2 seeks to evaluate the use of PEBA for various sheet materials. A comparison of PEBA to thermal annealing will be made for a variety of ion implantation processes.

Rapid Selective Annealing of Cu Thin Films on Si Using Microwaves

NASA Technical Reports Server (NTRS)

Brain, R. A.; Atwater, H. A.; Watson, T. J.; Barmatz, M.

1994-01-01

A major goal of the semiconductor indurstry is to lower the processing temperatures needed for interconnects in silicon integrated circuits. Typical rapid thermal annealing processes heat the film as well as the substrate, creating device problems.

Deformation and thermal histories of ordinary chondrites: Evidence for post-deformation annealing and syn-metamorphic shock

NASA Astrophysics Data System (ADS)

Ruzicka, Alex; Hugo, Richard; Hutson, Melinda

2015-08-01

We show that olivine microstructures in seven metamorphosed ordinary chondrites of different groups studied with optical and transmission electron microscopy can be used to evaluate the post-deformation cooling setting of the meteorites, and to discriminate between collisions affecting cold and warm parent bodies. The L6 chondrites Park (shock stage S1), Bruderheim (S4), Leedey (S4), and Morrow County (S5) were affected by variable shock deformation followed by relatively rapid cooling, and probably cooled as fragments liberated by impact in near-surface settings. In contrast, Kernouvé (H6 S1), Portales Valley (H6/7 S1), and MIL 99301 (LL6 S1) appear to have cooled slowly after shock, probably by deep burial in warm materials. In these chondrites, post-deformation annealing lowered apparent optical strain levels in olivine. Additionally, Kernouvé, Morrow County, Park, MIL 99301, and possibly Portales Valley, show evidence for having been deformed at an elevated temperature (⩾800-1000 °C). The high temperatures for Morrow County can be explained by dynamic heating during intense shock, but Kernouvé, Park, and MIL 99301 were probably shocked while the H, L and LL parent bodies were warm, during early, endogenically-driven thermal metamorphism. Thus, whereas the S4 and S5 chondrites experienced purely shock-induced heating and cooling, all the S1 chondrites examined show evidence for static heating consistent with either syn-metamorphic shock (Kernouvé, MIL 99301, Park), post-deformation burial in warm materials (Kernouvé, MIL 99301, Portales Valley), or both. The results show the pitfalls in relying on optical shock classification alone to infer an absence of shock and to construct cooling stratigraphy models for parent bodies. Moreover, they provide support for the idea that "secondary" metamorphic and "tertiary" shock processes overlapped in time shortly after the accretion of chondritic planetesimals, and that impacts into warm asteroidal bodies were common.

Cold sintering and electrical characterization of lead zirconate titanate piezoelectric ceramics

NASA Astrophysics Data System (ADS)

Wang, Dixiong; Guo, Hanzheng; Morandi, Carl S.; Randall, Clive A.; Trolier-McKinstry, Susan

2018-01-01

This paper describes a cold sintering process for Pb(Zr,Ti)O3 ceramics and the associated processing-property relations. Pb(Zr,Ti)O3 has a very small, incongruent solubility that is a challenge during cold sintering. To circumvent this, a Pb(NO3)2 solution was used as the transient liquid phase. A bimodal lead zirconate titanate powder was densified to a relative density of 89% by cold sintering at 300 °C and 500 MPa. After the cold sintering step, the permittivity was 200, and the dielectric loss was 2.0%. A second heat-treatment involving a 3 h anneal at 900 °C increased the relative density to 99%; the resulting relative dielectric permittivity was 1300 at room temperature and 100 kHz. The samples showed well-defined ferroelectric hysteresis loops, having a remanent polarization of 28 μC/cm2. On poling, the piezoelectric coefficient d33 was ˜200 pC/N. With a 700 °C 3 h post-annealing, samples show a lower room temperature relative permittivity (950 at 100 kHz), but a 24 h hold time at 700 °C produces ceramics where there is an improved relative dielectric constant (1050 at 100 kHz).

Hot Ductility Characterization of Sanicro-28 Super-Austenitic Stainless Steel

NASA Astrophysics Data System (ADS)

Mirzaei, A.; Zarei-Hanzaki, A.; Abedi, H. R.

2016-05-01

The hot ductility behavior of a super-austenitic stainless steel has been studied using tensile testing method in the temperature range from 1073 K to 1373 K (800 °C to 1100 °C) under the strain rates of 0.1, 0.01, and 0.001 s-1. The hot compression tests were also performed at the same deformation condition to identify the activated restoration mechanisms. At lower temperatures [ i.e., 1073 K and 1173 K (800 °C and 900 °C)], the serration of initial grain boundaries confirms the occurrence of dynamic recovery as the predominant restoration process. However, in the course of applied deformation, the initial microstructure is recrystallized at higher temperatures [ i.e., 1273 K and 1373 K (1000 °C and 1100 °C)]. In this respect, annealing the twin boundaries could well stimulate the recrystallization kinetic through initiation new annealing twins on prior annealing twin boundaries. The hot tensile results show that there is a general trend of increasing ductility by temperature. However, two regions of ductility drop are recognized at 1273 K and 1373 K (1000°C)/0.1s-1 and (1100°C)/0.01s-1. The ductility variations at different conditions of temperature and strain rate are discussed in terms of simultaneous activation of grain boundary sliding and restoration processes. The observed ductility troughs are attributed to the occurrence of grain boundary sliding and the resulting R-type and W-type cracks. The occurrence of dynamic recrystallization is also considered as the main factor increasing the ductility at higher temperatures. The enhanced ductility is primarily originated from the post-uniform elongation behavior, which is directly associated with the strain rate sensitivity of the experimental material.

Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

NASA Astrophysics Data System (ADS)

van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

2016-09-01

We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment

NASA Technical Reports Server (NTRS)

Thakoor, Sarita (Inventor)

1992-01-01

Thin film ferroelectric capacitors comprising a ferroelectric film sandwiched between electrodes for nonvolatile memory operations are rendered more stable by subjecting the capacitors to an anneal following deposition of the top electrode. The anneal is done so as to form the interface between the ferroelectric film and the top electrode. Heating in an air oven, laser annealing, or electron bombardment may be used to form the interface. Heating in an air oven is done at a temperature at least equal to the crystallization temperature of the ferroelectric film. Where the ferroelectric film comprises lead zirconate titanate, annealing is done at about 550 to 600 C for about 10 to 15 minutes. The formation treatment reduces the magnitude of charge associated with the nonswitching pulse in the thin film ferroelectric capacitors. Reduction of this charge leads to significantly more stable nonvolatile memory operations in both digital and analog memory devices. The formation treatment also reduces the ratio of change of the charge associated with the nonswitching pulse as a function of retention time. These improved memory devices exhibit greater performance in retention and reduced fatigue in memory arrays.

Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment

NASA Technical Reports Server (NTRS)

Thakoor, Sarita (Inventor)

1994-01-01

Thin film ferroelectric capacitors (10) comprising a ferroelectric film (18) sandwiched between electrodes (16 and 20) for nonvolatile memory operations are rendered more stable by subjecting the capacitors to an anneal following deposition of the top electrode (20). The anneal is done so as to form the interface (22) between the ferroelectric film and the top electrode. Heating in an air oven, laser annealing, or electron bombardment may be used to form the interface. Heating in an air oven is done at a temperature at least equal to the crystallization temperature of the ferroelectric film. Where the ferroelectric film comprises lead zirconate titanate, annealing is done at about 550.degree. to 600.degree. C. for about 10 to 15 minutes. The formation treatment reduces the magnitude of charge associated with the non-switching pulse in the thin film ferroelectric capacitors. Reduction of this charge leads to significantly more stable nonvolatile memory operations in both digital and analog memory devices. The formation treatment also reduces the ratio of change of the charge associated with the non-switching pulse as a function of retention time. These improved memory devices exhibit greater performance in retention and reduced fatigue in memory arrays.

The effect of a simple annealing heat treatment on the mechanical properties of cold-sprayed aluminum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hall, Aaron Christopher; Roemer, Timothy John; Hirschfeld, Deidre A.

2004-11-01

Cold spray, a new member of the thermal spray process family, can be used to prepare dense, thick metal coatings. It has tremendous potential as a spray-forming process. However, it is well known that significant cold work occurs during the cold spray deposition process. This cold work results in hard coatings but relatively brittle bulk deposits. This work investigates the mechanical properties of cold-sprayed aluminum and the effect of annealing on those properties. Cold spray coatings approximately 1 cm thick were prepared using three different feedstock powders: Valimet H-10; Valimet H-20; and Brodmann Flomaster. ASTM E8 tensile specimens were machinedmore » from these coatings and tested using standard tensile testing procedures. Each material was tested in two conditions: as-sprayed; and after a 300 C, 22 h air anneal. The as-sprayed material showed high ultimate strength and low ductility, with <1% elongation. The annealed samples showed a reduction in ultimate strength but a dramatic increase in ductility, with up to 10% elongation. The annealed samples exhibited mechanical properties that were similar to those of wrought 1100 H14 aluminum. Microstructural examination and fractography clearly showed a change in fracture mechanism between the as-sprayed and annealed materials. These results indicate good potential for cold spray as a bulk-forming process.« less

The effect of a simple annealing heat treatement on the mechanical properties of cold-sprayed aluminium.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hall, Aaron Christopher; Roemer, Timothy John; Hirschfeld, Deidre A.

2005-08-01

Cold spray, a new member of the thermal spray process family, can be used to prepare dense, thick metal coatings. It has tremendous potential as a spray-forming process. However, it is well known that significant cold work occurs during the cold spray deposition process. This cold work results in hard coatings but relatively brittle bulk deposits. This work investigates the mechanical properties of cold-sprayed aluminum and the effect of annealing on those properties. Cold spray coatings approximately 1 cm thick were prepared using three different feedstock powders: Valimet H-10: Valimet H-20: and Brodmann Flomaster. ASTM E8 tensile specimens were machinedmore » from these coatings and tested using standard tensile testing procedures. Each material was tested in two conditions: as-sprayed; and after a 300 C, 22h air anneal. The as-sprayed material showed high ultimate strength and low ductility, with <1% elongation. The annealed samples showed a reduction in ultimate strength but a dramatic increase in ductility, with up to 10% elongation. The annealed samples exhibited mechanical properties that were similar to those of wrought 1100 H14 aluminum. Microstructural examination and fractography clearly showed a change in fracture mechanism between the as-sprayed and annealed materials. These results indicate good potential for cold spray as a bulkforming process.« less

[Comporison Sduty of Microstructure by Metallographicalk on the Polarized Light and Texture by XRD of CC 5083 and CC 5182 Aluminium Alloy after Cold Rolling and Recrystallization].

PubMed

Chen, Ming-biao; Li, Yong-wei; Tan, Yuan-biao; Ma, Min; Wang, Xue-min; Liu, Wen-chang

2015-03-01

At present the study of relation between microstructure, texture and performance of CC 5083 aluminium alloy after cold tolling and recrystallization processes is still finitude. So that the use of the CC 5083 aluminium alloy be influenced. Be cased into electrical furnace, hot up with unlimited speed followed the furnace hot up to different temperature and annealed 2h respectively, and be cased into salt-beth furnace, hot up quickly to different temperature and annealed 30 min respectively for CC 5083 and CC 5182 aluminum alloy after cold roling with 91.5% reduction. The microstructure be watched use metallographic microscope, the texture be inspected by XRD. The start temperature of recrystallization and grain grow up temperature within annealing in the electric furnace of CC 5083 aluminum alloy board is 343 degrees C, and the shap of grain after grow up with long strip (the innovation point ); The start temperature of recrystallization within annealling in the salt bath furnace of CC 5083 is 343 degrees C. The start temperature and end temperature of recrystallization within annealling of CC 5083 and CC 5182 aluminum alloy is 371 degrees C. The grain grow up outstanding of cold rooled CC 5152 aluminum alloy after annealed with 454 degrees C in the electric furnace and salt bath furnace. The start temperature of grain grow up of CC 5083 alluminurn alloy annealed in the electric furnace and salt bath furnace respectively is higher than the start temperature of grain grow up of CC 5182 alluminum alloy annealed in the electric furnace and salt bath furnace respectively. The strat temperature of recrystallization grain grow up is higher than which annealled with other three manner annealing process. The recrystallization temperature of CC 5182 annealed in the salt bath furnace is higher than which annealed in the electric furnace. The recrystallization temperature of the surface layer of CC 5083 and CC 5182 aluminum alloy is higher than the inner layer (the innovation point). There is a difference each other of the structure and the texture of the four manner annealing aluminum alloy (the innovation point). There is a little difference at the recrystallization processes course reflectived by the observe results of structure transform and by the examination results of texture transmission.

Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

NASA Astrophysics Data System (ADS)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N.; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi; Uraoka, Yukiharu

2016-01-01

We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ~13 cm2 V-1 s-1 and small threshold voltage which varied from ~0-3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs.

A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation

NASA Astrophysics Data System (ADS)

Yau, J.-B.; Cai, J.; Hashemi, P.; Balakrishnan, K.; D'Emic, C.; Ning, T. H.

2018-04-01

We report a systematic study of process-related electrical defects in symmetric lateral NPN transistors on silicon-on-insulator (SOI) fabricated using ion implantation for all the doped regions. A primary objective of this study is to see if pipe defects (emitter-collector shorts caused by locally enhanced dopant diffusion) are a show stopper for such bipolar technology. Measurements of IC-VCE and Gummel currents in parallel-connected transistor chains as a function of post-fabrication rapid thermal anneal cycles allow several process-related electrical defects to be identified. They include defective emitter-base and collector-base diodes, pipe defects, and defects associated with a dopant-deficient region in an extrinsic base adjacent its intrinsic base. There is no evidence of pipe defects being a major concern in SOI lateral bipolar transistors.

Post-annealing-free, room temperature processed nanocrystalline indium tin oxide thin films for plastic electronics

NASA Astrophysics Data System (ADS)

Nyoung Jang, Jin; Jong Lee, You; Jang, YunSung; Yun, JangWon; Yi, Seungjun; Hong, MunPyo

2016-06-01

In this study, we confirm that bombardment by high energy negative oxygen ions (NOIs) is the key origin of electro-optical property degradations in indium tin oxide (ITO) thin films formed by conventional plasma sputtering processes. To minimize the bombardment effect of NOIs, which are generated on the surface of the ITO targets and accelerated by the cathode sheath potential on the magnetron sputter gun (MSG), we introduce a magnetic field shielded sputtering (MFSS) system composed of a permanent magnetic array between the MSG and the substrate holder to block the arrival of energetic NOIs. The MFSS processed ITO thin films reveal a novel nanocrystal imbedded polymorphous structure, and present not only superior electro-optical characteristics but also higher gas diffusion barrier properties. To the best of our knowledge, no gas diffusion barrier composed of a single inorganic thin film formed by conventional plasma sputtering processes achieves such a low moisture permeability.

Shape Memory Characteristics of Ti(sub 49.5)Ni(sub 25)Pd(sub 25)Sc(sub 0.5) High-Temperature Shape Memory Alloy After Severe Plastic Deformation

NASA Technical Reports Server (NTRS)

Atli, K. C.; Karaman, I.; Noebe, R. D.; Garg, A.; Chumlyakov, Y. I.; Kireeva, I. V.

2011-01-01

A Ti(49.5)Ni25Pd25Sc(0.5) high-temperature shape memory alloy is thermomechanically processed to obtain enhanced shape-memory characteristics: in particular, dimensional stability upon repeated thermal cycles under constant loads. This is accomplished using severe plastic deformation via equal channel angular extrusion (ECAE) and post-processing annealing heat treatments. The results of the thermomechanical experiments reveal that the processed materials display enhanced shape memory response, exhibiting higher recoverable transformation and reduced irrecoverable strain levels upon thermal cycling compared with the unprocessed material. This improvement is attributed to the increased strength and resistance of the material against defect generation upon phase transformation as a result of the microstructural refinement due to the ECAE process, as supported by the electron microscopy observations.

Synthesis of cobalt doped BiFeO3 multiferroic thin films on p-Si substrate by sol-gel method

NASA Astrophysics Data System (ADS)

Prasannakumara, R.; Shrisha, B. V.; Naik, K. Gopalakrishna

2018-05-01

Bismuth ferrite (BiFeO3) and cobalt doped BiFeO3 (BiFe1-xCoxO3) nanostructure thin films were grown on p-silicon substrates by sol-gel spin coating method with a sequence of coating and annealing process. The post-annealing of the grown films was carried out under high pure argon atmosphere. The grown nanostructure thin films were characterized using XRD, FESEM, and AFM for the structural, morphological and topological studies, respectively. The elemental compositions of the samples were studied by EDX spectra. The PL spectra of the grown sample shows a narrow emission peak around 559 nm which corresponds to the energy band gap of BFO thin films. The XRD peaks of the BiFeO3 nanostructure thin film reveals the rhombohedral structure and transformed from rhombohedral to orthorhombic or tetragonal structure in Co doped BiFeO3 thin films. The Co substitution in BiFeO3 helped to obtain higher dense nanostructure thin films with smaller grain size than the BiFeO3 thin films.

Thermodynamic and nonstoichiometric behavior of the lead-doped Bi-2223 system

NASA Astrophysics Data System (ADS)

Tetenbaum, M.; Hash, M.; Tani, B. S.; Luo, J. S.; Maroni, V. A.

1994-12-01

Electromotive force (EMF) measurements of oxygen fugacities as a function of stoichiometry have been made in the lead-doped Bi-2223 superconducting system in the temperature range 700-815°C by means of an oxygen titration technique. The results of our studies indicate that processing or annealing lead-doped Bi-2223 at temperatures ranging from 700 to 815°C and at oxygen partial pressures ranging from ∼0.02 to 0.2 atm should tend to preserve Bi-2223 as essentially single-phase material. Thermodynamic assessments of partial molar quantities indicate that the plateau regions can be represented by the diphasic CuOCu 2O system. In accord with the EMF measurements, it was found that lead-doped Bi-2223 in a silver sheath is stable at 815°C for oxygen partial pressures between 0.02 and 0.13 atm. Long-duration post anneals of silver-clad Bi-2223 filaments at 825°C and an oxygen partial pressure of 0.075 atm eliminated Bi-2212 intergrowths with a concomitant increase in the superconducting transition sharpness.

Controlling Crystal Microstructure to Minimize Loss in Polymer Dielectrics

NASA Astrophysics Data System (ADS)

Miranda, Daniel; Iacob, Ciprian; Zhang, Shihai; Runt, James

Polymer dielectric films are of great importance for high performance capacitors. For these films it is critical to reduce dielectric loss, as it diminishes efficiency and contributes to waste heat generation during device operation. Here, a model semi-crystalline polymer, poly(ethylene naphthalate) (PEN), was used to examine how morphological factors inhibit chain relaxations responsible for loss. This was achieved by manipulating the extent of crystallization and the crystalline microstructure through a combination of annealing and uniaxial drawing, and investigating their effects on dielectric performance. Varying crystallization conditions influenced the dynamic Tg and extent of rigid amorphous fraction formation, but had a limited effect on loss magnitude. Film orientation however greatly reduced loss, through strain-induced crystallization and development of oriented amorphous mesophasic regions. Post-drawing annealing conditions were capable of further refining the crystal microstructure and, in turn, the dielectric properties. These findings demonstrate that semi-crystalline polymer morphology has a very strong influence on amorphous chain relaxations, and understanding how processing conditions affect morphology is critical to the rational design of polymer dielectrics. Office of Naval Research.

Apparatuses and methods for laser reading of thermoluminescent phosphors

DOEpatents

Braunlich, Peter F.; Tetzlaff, Wolfgang

1989-01-01

Apparatuses and methods for rapidly reading thermoluminescent phosphors to determine the amount of luminescent energy stored therein. The stored luminescent energy is interpreted as a measure of the total exposure of the thermoluminescent phosphor to ionizing radiation. The thermoluminescent phosphor reading apparatus uses a laser to generate a laser beam. The laser beam power level is monitored by a laser power detector and controlled to maintain the power level at a desired value or values which can vary with time. A shutter or other laser beam interrupting means is used to control exposure of the thermoluminescent phosphor to the laser beam. The laser beam can be equalized using an opitcal equalizer so that the laser beam has an approximately uniform power density across the beam. The heated thermoluminescent phosphor emits a visible or otherwise detectable luminescent emission which is measured as an indication of the radiation exposure of the thermoluminscent phosphors. Also disclosed are preferred signal processing and control circuits including one system using a digital computer. Also disclosed are time-profiled laser power cycles for pre-anneal, read and post-anneal treatment of phosphors.

Annealing to optimize the primary drying rate, reduce freezing-induced drying rate heterogeneity, and determine T(g)' in pharmaceutical lyophilization.

PubMed

Searles, J A; Carpenter, J F; Randolph, T W

2001-07-01

In a companion paper we show that the freezing of samples in vials by shelf-ramp freezing results in significant primary drying rate heterogeneity because of a dependence of the ice crystal size on the nucleation temperature during freezing.1 The purpose of this study was to test the hypothesis that post-freezing annealing, in which the product is held at a predetermined temperature for a specified duration, can reduce freezing-induced heterogeneity in sublimation rates. In addition, we test the impact of annealing on primary drying rates. Finally, we use the kinetics of relaxations during annealing to provide a simple measurement of T(g)', the glass transition temperature of the maximally freeze-concentrated amorphous phase, under conditions and time scales most appropriate for industrial lyophilization cycles. Aqueous solutions of hydroxyethyl starch (HES), sucrose, and HES:sucrose were either frozen by placement on a shelf while the temperature was reduced ("shelf-ramp frozen") or by immersion into liquid nitrogen. Samples were then annealed for various durations over a range of temperatures and partially lyophilized to determine the primary drying rate. The morphology of fully dried liquid nitrogen-frozen samples was examined using scanning electron microscopy. Annealing reduced primary drying rate heterogeneity for shelf-ramp frozen samples, and resulted in up to 3.5-fold increases in the primary drying rate. These effects were due to increased ice crystal sizes, simplified amorphous structures, and larger and more numerous holes on the cake surface of annealed samples. Annealed HES samples dissolved slightly faster than their unannealed counterparts. Annealing below T(g)' did not result in increased drying rates. We present a simple new annealing-lyophilization method of T(g)' determination that exploits this phenomenon. It can be carried out with a balance and a freeze-dryer, and has the additional advantage that a large number of candidate formulations can be evaluated simultaneously.

Bragg reflector based gate stack architecture for process integration of excimer laser annealing

NASA Astrophysics Data System (ADS)

Fortunato, G.; Mariucci, L.; Cuscunà, M.; Privitera, V.; La Magna, A.; Spinella, C.; Magrı, A.; Camalleri, M.; Salinas, D.; Simon, F.; Svensson, B.; Monakhov, E.

2006-12-01

An advanced gate stack structure, which incorporates a Bragg reflector, has been developed for the integration of excimer laser annealing into the power metal-oxide semiconductor (MOS) transistor fabrication process. This advanced gate structure effectively protects the gate stack from melting, thus solving the problem related to protrusion formation. By using this gate stack configuration, power MOS transistors were fabricated with improved electrical characteristics. The Bragg reflector based gate stack architecture can be applied to other device structures, such as scaled MOS transistors, thus extending the possibilities of process integration of excimer laser annealing.

Processability evaluation of a Mo-containing FeCrAl alloy for seamless thin-wall tube fabrication

DOE PAGES

Sun, Zhiqian; Yamamoto, Yukinori

2017-06-10

The processability of a Mo-containing FeCrAl alloy (Fe-13Cr-5.2Al-2Mo base, in wt%), developed for accident-tolerant nuclear fuel claddings, was evaluated through a stepwise rolling process at 400 °C under two different inter-pass annealing conditions (i.e., 650 °C for 1 h and at 870 °C for 30 min). The inter-pass annealing at 870 °C easily softened the FeCrAl alloy; however, it led to the formation of coarse grains of ~200 µm. On the other hand, the FeCrAl alloy maintained elongated, deformed grains with the inter-pass annealing at 650 °C, but the annealed samples showed relatively high deformation resistance and strong texture. Importantmore » aspects concerning the processability and microstructural control of FeCrAl alloys, such as deformation inhomogeneity, texture development, and grain coarsening, were discussed. Optimized processing conditions were recommended, based on the results, to achieve desirable microstructures with balanced processability and mechanical properties.« less

Intrinsic and metal-doped gallium oxide based high-temperature oxygen sensors for combustion processes

NASA Astrophysics Data System (ADS)

Rubio, Ernesto Javier

Currently, there is enormous interest in research, development and optimization of the combustion processes for energy harvesting. Recent statistical and economic analyses estimated that by improving the coal-based firing/combustion processes in the power plants, savings up to $450-500 million yearly can be achieved. Advanced sensors and controls capable of withstanding extreme environments such as high temperatures, highly corrosive atmospheres, and high pressures are critical to such efficiency enhancement and cost savings. For instance, optimization of the combustion processes in power generation systems can be achieved by sensing, monitoring and control of oxygen, which is a measure of the completeness of the process and can lead to enhanced efficiency and reduced greenhouse gas emissions. However, despite the fact that there exists a very high demand for advanced sensors, the existing technologies suffer from poor 'response and recovery times' and 'long-term stability.' Motivated by the aforementioned technological challenges, the present work was focused on high-temperature (≥700 °C) oxygen sensors for application in power generation systems. The objective of the present work is to investigate nanostructured gallium oxide (2O3) based sensors for oxygen sensing, where we propose to conduct in-depth exploration of the role of refractory metal (tungsten, W, in this case) doping into 2O 3 to enhance the sensitivity, selectivity, stability ("3S" criteria) and reliability of such sensors while keeping cost economical. Tungsten (W) doped gallium oxide (2O3) thin films were deposited via rf-magnetron co-sputtering of W-metal and Ga2O3-ceramic targets. Films were produced by varying the sputtering power applied to the W-target in order to achieve variable W content into 2O3 films while substrate temperature was kept constant at 500 °C. Chemical composition, chemical valence states, microstructure and crystal structure of as-grown and post-annealed W-doped 2O3 films were evaluated as a function of W-content. The structural analyses indicate the formation of monoclinic beta-phase 2O3 in as-grown W-doped 2O3 films for all W-content. Thermally induced secondary phase (W-oxide) formation was observed after the annealing process. Chemical analysis demonstrates the increasing W atomic percentage in the films with increasing sputtering power, whereas the main metallic ionic species for the films are W6+ and Ga3+. Evidence of W interdiffusion due to the annealing process is presented, and the mechanism of diffusion is discussed. Surface morphology of the films is also discussed, and the transition to mesoporous surface is observed after annealing. Finally, the oxygen sensor performance evaluation demonstrated that the W-incorporated 2O3 exhibits improved response time compared to intrinsic 2O3 based oxygen sensors.

Luminescence parameters of InP/ZnS@AAO nanostructures

NASA Astrophysics Data System (ADS)

Savchenko, S. S.; Vokhmintsev, A. S.; Weinstein, I. A.

2016-03-01

Nanostructured membranes of anodic aluminum oxide (AAO) with InP/ZnS semiconductor nanocrystals deposited in pores were synthesized by electrochemical technique, physical deposition and post processing in an ultrasonic bath. Photoluminescence spectra of the samples were studied. Fluorescent properties of the quantum dots are found to be retained after the deposition. The color range is illustrated that can be covered using membranes annealed at temperatures < 900°C and by varying the concentration of the deposited InP/ZnS nanocrystals. Chromaticity coordinates and correlated color temperature for the fabricated white InP/ZnS@AAO phosphor are (0.21, 0.26) and 4115 K, respectively.

Vacancy dynamic in Ni-Mn-Ga ferromagnetic shape memory alloys

NASA Astrophysics Data System (ADS)

Merida, D.; García, J. A.; Sánchez-Alarcos, V.; Pérez-Landazábal, J. I.; Recarte, V.; Plazaola, F.

2014-06-01

Vacancies control any atomic ordering process and consequently most of the order-dependent properties of the martensitic transformation in ferromagnetic shape memory alloys. Positron annihilation spectroscopy demonstrates to be a powerful technique to study vacancies in NiMnGa alloys quenched from different temperatures and subjected to post-quench isothermal annealing treatments. Considering an effective vacancy type the temperature dependence of the vacancy concentration has been evaluated. Samples quenched from 1173 K show a vacancy concentration of 1100 ± 200 ppm. The vacancy migration and formation energies have been estimated to be 0.55 ± 0.05 eV and 0.90 ± 0.07 eV, respectively.

Structure, Surface Morphology, and Optical and Electronic Properties of Annealed SnS Thin Films Obtained by CBD

NASA Astrophysics Data System (ADS)

Reghima, Meriem; Akkari, Anis; Guasch, Cathy; Turki-Kamoun, Najoua

2014-09-01

SnS thin films were initially coated onto Pyrex substrates by the chemical bath deposition (CBD) method and annealed at various temperatures ranging from 200°C to 600°C for 30 min in nitrogen gas. X-ray diffraction (XRD) analysis revealed that a structural transition from face-centered cubic to orthorhombic occurs when the annealing temperature is over 500°C. The surface morphology of all thin layers was investigated by means of scanning electron microscopy and atomic force microscopy. The elemental composition of Sn and S, as measured by energy dispersive spectroscopy, is near the stoichiometric ratio. Optical properties studied by means of transmission and reflection measurements show an increase in the absorption coefficient with increasing annealing temperatures. The band gap energy is close to 1.5 eV, which corresponds to the optimum for photovoltaic applications. Last, the thermally stimulated current measurements show that the electrically active traps located in the band gap disappear after annealing at 500°C. These results suggest that, once again, annealing as a post-deposition treatment may be useful for improving the physical properties of the SnS layers included in photovoltaic applications. Moreover, the thermo-stimulated current method may be of practical relevance to explore the electronic properties of more conventional industrial methods, such as sputtering and chemical vapor deposition.

Baking a mass-spectrometry data PIE with McMC and simulated annealing: predicting protein post-translational modifications from integrated top-down and bottom-up data.

PubMed

Jefferys, Stuart R; Giddings, Morgan C

2011-03-15

Post-translational modifications are vital to the function of proteins, but are hard to study, especially since several modified isoforms of a protein may be present simultaneously. Mass spectrometers are a great tool for investigating modified proteins, but the data they provide is often incomplete, ambiguous and difficult to interpret. Combining data from multiple experimental techniques-especially bottom-up and top-down mass spectrometry-provides complementary information. When integrated with background knowledge this allows a human expert to interpret what modifications are present and where on a protein they are located. However, the process is arduous and for high-throughput applications needs to be automated. This article explores a data integration methodology based on Markov chain Monte Carlo and simulated annealing. Our software, the Protein Inference Engine (the PIE) applies these algorithms using a modular approach, allowing multiple types of data to be considered simultaneously and for new data types to be added as needed. Even for complicated data representing multiple modifications and several isoforms, the PIE generates accurate modification predictions, including location. When applied to experimental data collected on the L7/L12 ribosomal protein the PIE was able to make predictions consistent with manual interpretation for several different L7/L12 isoforms using a combination of bottom-up data with experimentally identified intact masses. Software, demo projects and source can be downloaded from http://pie.giddingslab.org/

Ultra-thin multilayer capacitors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Renk, Timothy Jerome; Monson, Todd C.

2009-06-01

The fabrication of ultra-thin lanthanum-doped lead zirconium titanate (PLZT) multilayer ceramic capacitors (MLCCs) using a high-power pulsed ion beam was studied. The deposition experiments were conducted on the RHEPP-1 facility at Sandia National Laboratories. The goal of this work was to increase the energy density of ceramic capacitors through the formation of a multilayer device with excellent materials properties, dielectric constant, and standoff voltage. For successful device construction, there are a number of challenging requirements including achieving correct stoichiometric and crystallographic composition of the deposited PLZT, as well as the creation of a defect free homogenous film. This report detailsmore » some success in satisfying these requirements, although 900 C temperatures were necessary for PLZT perovskite phase formation. These temperatures were applied to a previously deposited multi-layer film which was then post-annealed to this temperature. The film exhibited mechanical distress attributable to differences in the coefficient of thermal expansion (CTE) of the various layers. This caused significant defects in the deposited films that led to shorts across devices. A follow-on single layer deposition without post-anneal produced smooth layers with good interface behavior, but without the perovskite phase formation. These issues will need to be addressed in order for ion beam deposited MLCCs to become a viable technology. It is possible that future in-situ heating during deposition may address both the CTE issue, and result in lowered processing temperatures, which in turn could raise the probability of successful MLCC formation.« less

Sensitizing properties of luminescence centers on the emission of Er{sup 3+} in Si-rich SiO{sub 2} film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Qianyu; Gao, Yuhan; Li, Dongsheng, E-mail: mselds@zju.edu.cn

2016-05-28

In this paper, we report on the luminescence-center (LC)-mediated excitation of Er{sup 3+} as a function of annealing temperature in Er-doped Si-rich SiO{sub 2} (SRO) films fabricated by electron beam evaporation. It is found that the annealing temperature has significant effects on the emission of Er{sup 3+} and the specific optical-active point-defects called LCs within Er-doped SRO films. Different luminescence centers generated by the evolution of microstructures during annealing process act as efficient sensitizers for Er{sup 3+} in the films when the annealing temperature is below 1100 °C. Moreover, the temperature dependence of the energy coupling between LCs and Er{sup 3+}more » demonstrates the effective phonon-mediated energy transfer process. In addition, when the annealing temperature reaches 1100 °C, the decreased density of activable erbium ions induced by the aggregation of Er will bring detrimental effects on the emission of Er{sup 3+}. It is demonstrated that an appropriate annealing process can be designed to achieve efficiently enhanced emissions from Er{sup 3+} ions by optimizing the density of LCs and the coupling between Er{sup 3+} and LCs.« less

A new bottom-up synthesis of MnBi particles with high magnetic performance

NASA Astrophysics Data System (ADS)

Liu, Shoufa; Wang, Jinpeng; Dong, Feng

2018-01-01

Mn and Bi nanoparticles were synthesized by a wet chemistry reduction process. The as-synthesized Mn and Bi nanoparticles were mixed in hexane with the molar ratio of 1 to 1, and annealed at 250 °C in an inert gas environment. In four parallel experiments, the annealing time was controlled to be 2, 4, 6, and 8 h. The impacts of annealing time on product morphology, crystallization, and magnetic properties were investigated. The results showed that within 6 h annealing, an increased annealing time resulted in more sintering among the particles in the products, enhanced crystallization, and improved magnetic properties. When the annealing time exceeded 6 h, further annealing did not bring much difference in morphology, crystallization, and magnetic properties, indicating a thermally stable state of the product.

Transparent and Flexible Zinc Tin Oxide Thin Film Transistors and Inverters using Low-pressure Oxygen Annealing Process

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Kim, Jiwan; Oh, Min Suk

2018-05-01

We report on the transparent and flexible enhancement-load inverters which consist of zinc tin oxide (ZTO) thin film transistors (TFTs) fabricated at low process temperature. To control the electrical characteristics of oxide TFTs by oxygen vacancies, we applied low-pressure oxygen rapid thermal annealing (RTA) process to our devices. When we annealed the ZTO TFTs in oxygen ambient of 2 Torr, they showed better electrical characteristics than those of the devices annealed in the air ambient of 760 Torr. To realize oxide thin film transistor and simple inverter circuits on flexible substrate, we annealed the devices in O2 of 2 Torr at 150° C and could achieve the decent electrical properties. When we used transparent conductive oxide electrodes such as indium zinc oxide (IZO) and indium tin oxide (ITO), our transparent and flexible inverter showed the total transmittance of 68% in the visible range and the voltage gain of 5. And the transition voltage in voltage transfer curve was located well within the range of operation voltage.

Improvement of the Mechanical Properties of 1022 Carbon Steel Coil by Using the Taguchi Method to Optimize Spheroidized Annealing Conditions.

PubMed

Yang, Chih-Cheng; Liu, Chang-Lun

2016-08-12

Cold forging is often applied in the fastener industry. Wires in coil form are used as semi-finished products for the production of billets. This process usually requires preliminarily drawing wire coil in order to reduce the diameter of products. The wire usually has to be annealed to improve its cold formability. The quality of spheroidizing annealed wire affects the forming quality of screws. In the fastener industry, most companies use a subcritical process for spheroidized annealing. Various parameters affect the spheroidized annealing quality of steel wire, such as the spheroidized annealing temperature, prolonged heating time, furnace cooling time and flow rate of nitrogen (protective atmosphere). The effects of the spheroidized annealing parameters affect the quality characteristics of steel wire, such as the tensile strength and hardness. A series of experimental tests on AISI 1022 low carbon steel wire are carried out and the Taguchi method is used to obtain optimum spheroidized annealing conditions to improve the mechanical properties of steel wires for cold forming. The results show that the spheroidized annealing temperature and prolonged heating time have the greatest effect on the mechanical properties of steel wires. A comparison between the results obtained using the optimum spheroidizing conditions and the measures using the original settings shows the new spheroidizing parameter settings effectively improve the performance measures over their value at the original settings. The results presented in this paper could be used as a reference for wire manufacturers.

Electron backscatter and X-ray diffraction studies on the deformation and annealing textures of austenitic stainless steel 310S

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nezakat, Majid, E-mail: majid.nezakat@usask.ca

We studied the texture evolution of thermo-mechanically processed austenitic stainless steel 310S. This alloy was cold rolled up to 90% reduction in thickness and subsequently annealed at 1050 °C. At the early stages of deformation, strain-induced martensite was formed from deformed austenite. By increasing the deformation level, slip mechanism was found to be insufficient to accommodate higher deformation strains. Our results demonstrated that twinning is the dominant deformation mechanism at higher deformation levels. Results also showed that cold rolling in unidirectional and cross rolling modes results in Goss/Brass and Brass dominant textures in deformed samples, respectively. Similar texture components aremore » observed after annealing. Thus, the annealing texture was greatly affected by texture of the deformed parent phase and martensite did not contribute as it showed an athermal reversion during annealing. Results also showed that when the fraction of martensite exceeds a critical point, its grain boundaries impeded the movement of austenite grain boundaries during annealing. As a result, recrystallization incubation time would increase. This caused an incomplete recrystallization of highly deformed samples, which led to a rational drop in the intensity of the texture components. - Highlights: •Thermo-mechanical processing through different cold rolling modes can induce different textures. •Martensite reversion is athermal during annealing. •Higher fraction of deformation-induced martensite can increase the annealing time required for complete recrystallization. •Annealing texture is mainly influenced by the deformation texture of austenite.« less

The effects of different heat treatment annealing on structural properties of LaFe11.5Si1.5 compound

NASA Astrophysics Data System (ADS)

Norizan, Yang Nurhidayah Asnida; Din, Muhammad Faiz Md; Zamri, Wan Fathul Hakim W.; Hashim, Fakroul Ridzuan; Jusoh, Mohd Taufik; Rahman, Mohd Rashid Abdul

2018-02-01

The cubic NaZn13-type LaFe13-xSix based compounds have been studied systematically and has become one of the most interesting systems for exploring large MCE. Its magnetic properties are strongly doping dependent and provides many of advantage compare to other as magnetic materials for magnetic refrigerator application. In other to produce high quality of cubic NaZn13-type structure, the structural properties of LaFe11.5Si1.5 compounds annealed at different temperature have been investigated. The LaFe11.5Si1.5 compounds was prepared by arc melting and annealed at two different heat treatment which are 1323 K for 14 days and 1523 K for 4 hour. The powder X-ray diffraction (XRD) shows that a short time and high temperature annealing process has benefits for the formation of the NaZn13-type phase compared to a long time and low temperature annealing process. This is shown by the weight fraction of cubic NaZn13- type structure increases from 80% for low temperature annealing to 83% for high temperature annealing. At the same time, high temperature annealing increase the main structure and decrease the impurity (α-Fe and LaFeSi). Furthermore, it can be clearly seen in the Rietveld refinement results that the lattice parameter is increase at the high temperature annealing because of more cubic NaZn13 is formed at higher temperature.

HST/WFC3 Characteristics: gain, post-flash stability, UVIS low-sensitivity pixels, persistence, IR flats and bad pixel table

NASA Astrophysics Data System (ADS)

Gunning, Heather C.; Baggett, Sylvia; Gosmeyer, Catherine M.; Long, Knox S.; Ryan, Russell E.; MacKenty, John W.; Durbin, Meredith

2015-08-01

The Wide Field Camera 3 (WFC3) is a fourth-generation imaging instrument on the Hubble Space Telescope (HST). Installed in May 2009, WFC3 is comprised of two observational channels covering wavelengths from UV/Visible (UVIS) to infrared (IR); both have been performing well on-orbit. We discuss the gain stability of both WFC3 channel detectors from ground testing through present day. For UVIS, we detail a low-sensitivity pixel population that evolves during the time between anneals, but is largely reset by the annealing procedure. We characterize the post-flash LED lamp stability, used and recommended to mitigate CTE effects for observations with less than 12e-/pixel backgrounds. We present mitigation options for IR persistence during and after observations. Finally, we give an overview on the construction of the IR flats and provide updates on the bad pixel table.

Reduction of shunt current in buffer-free IrMn based spin-valve structures

NASA Astrophysics Data System (ADS)

Kocaman, B.; Akdoğan, N.

2018-06-01

The presence of thick buffer layers in magnetic sensor devices decreases sensor sensitivity due to shunt currents. With this motivation, we produced IrMn-based spin-valve multilayers without using buffer layer. We also studied the effects of post-annealing and IrMn thickness on exchange bias field (HEB) and blocking temperature (TB) of the system. Magnetization measurements indicate that both HEB and TB values are significantly enhanced with post-annealing of IrMn layer. In addition, we report that IrMn thickness of the system strongly influences the magnetization and transport characteristics of the spin-valve structures. We found that the minimum thickness of IrMn layer is 6 nm in order to achieve the lowest shunt current and high blocking temperature (>300 K). We also investigated the training of exchange bias to check the long-term durability of IrMn-based spin-valve structures for device applications.

Mechanism for accurate, protein-assisted DNA annealing by Deinococcus radiodurans DdrB

PubMed Central

Sugiman-Marangos, Seiji N.; Weiss, Yoni M.; Junop, Murray S.

2016-01-01

Accurate pairing of DNA strands is essential for repair of DNA double-strand breaks (DSBs). How cells achieve accurate annealing when large regions of single-strand DNA are unpaired has remained unclear despite many efforts focused on understanding proteins, which mediate this process. Here we report the crystal structure of a single-strand annealing protein [DdrB (DNA damage response B)] in complex with a partially annealed DNA intermediate to 2.2 Å. This structure and supporting biochemical data reveal a mechanism for accurate annealing involving DdrB-mediated proofreading of strand complementarity. DdrB promotes high-fidelity annealing by constraining specific bases from unauthorized association and only releases annealed duplex when bound strands are fully complementary. To our knowledge, this mechanism provides the first understanding for how cells achieve accurate, protein-assisted strand annealing under biological conditions that would otherwise favor misannealing. PMID:27044084

Testing of electroformed deposited iridium/powder metallurgy rhenium rockets

NASA Technical Reports Server (NTRS)

Reed, Brian D.; Dickerson, Robert

1996-01-01

High-temperature, oxidation-resistant chamber materials offer the thermal margin for high performance and extended lifetimes for radiation-cooled rockets. Rhenium (Re) coated with iridium (Ir) allow hours of operation at 2200 C on Earth-storable propellants. One process for manufacturing Ir/Re rocket chambers is the fabrication of Re substrates by powder metallurgy (PM) and the application of Ir coatings by using electroformed deposition (ED). ED Ir coatings, however, have been found to be porous and poorly adherent. The integrity of ED Ir coatings could be improved by densification after the electroforming process. This report summarizes the testing of two 22-N, ED Ir/PM Re rocket chambers that were subjected to post-deposition treatments in an effort to densify the Ir coating. One chamber was vacuum annealed, while the other chamber was subjected to hot isostatic pressure (HIP). The chambers were tested on gaseous oxygen/gaseous hydrogen propellants, at mixture ratios that simulated the oxidizing environments of Earth-storable propellants. ne annealed ED Ir/PM Re chamber was tested for a total of 24 firings and 4.58 hr at a mixture ratio of 4.2. After only 9 firings, the annealed ED Ir coating began to blister and spall upstream of the throat. The blistering and spalling were similar to what had been experienced with unannealed, as-deposited ED Ir coatings. The HIP ED Ir/PM Re chamber was tested for a total of 91 firings and 11.45 hr at mixture ratios of 3.2 and 4.2. The HIP ED Ir coating remained adherent to the Re substrate throughout testing; there were no visible signs of coating degradation. Metallography revealed, however, thinning of the HIP Ir coating and occasional pores in the Re layer upstream of the throat. Pinholes in the Ir coating may have provided a path for oxidation of the Re substrate at these locations. The HIP ED Ir coating proved to be more effective than vacuum annealed and as-deposited ED Ir. Further densification is still required to match the integrity of chemically vapor deposited Ir coatings. Despite this, the successful long duration testing of the HIP ED Ir chamber, in an oxidizing environment comparable to Earth-storable propellants, demonstrated the viability of this Ir/Re rocket fabrication process.

X-ray Characterization and Defect Control of III-Nitrides

NASA Astrophysics Data System (ADS)

Tweedie, James

A process for controlling point defects in a semiconductor using excess charge carriers was developed in theory and practice. A theoretical framework based on first principles was developed to model the effect of excess charge carriers on the formation energy and concentration of charged point defects in a semiconductor. The framework was validated for the completely general case of a generic carrier source and a generic point defect in a generic semiconductor, and then refined for the more specific case of a generic carrier source applied during the growth of a doped semiconductor crystal. It was theoretically demonstrated that the process as defined will always reduce the degree of compensation in the semiconductor. The established theoretical framework was applied to the case of above-bandgap illumination on both the MOCVD growth and the post-growth annealing of Mg-doped GaN thin films. It was theoretically demonstrated that UV light will lower the concentration of compensating defects during growth and will facilitate complete activation of the Mg acceptor at lower annealing temperatures. Annealing experiments demonstrated that UV illumination of GaN:Mg thin films during annealing lowers the resistivity of the film at any given temperature below the 650 °C threshold at which complete activation is achieved without illumination. Broad spectrum analysis of the photoluminescence (PL) spectra together with a correlation between the acceptor-bound exciton transition and room temperature resistivity demonstrated that UV light only acts to enhance the activation Mg. Surface chemistry and interface chemistry of AlN and high Al mole fraction AlGaN films were studied using x-ray photoelectron spectroscopy (XPS). It was seen that surfaces readily form stable surface oxides. The Schottky barrier height (SBH) of various metals contacted to these surfaces was using XPS. Finally, an x-ray diffraction method (XRD) was developed to quantify strain and composition of alloy films in the context of a processing environment. Reciprocal space mapping revealed intensity limitations on the accuracy of the method. The method was used to demonstrate a bimodal strain distribution across the composition spectrum for 200 nm AlGaN thin films grown on GaN. A weak, linear strain dependence on composition was observed for Al mole fractions below 30%. Above this threshold the films were observed to be completely relaxed by cracking.

Dielectric characterization of neutralized and nonneutralized chitosan upon drying.

PubMed

Viciosa, M T; Dionísio, M; Mano, J F

2006-02-15

Isothermal dielectric loss spectra of neutralized and nonneutralized chitosan were acquired in successive runs from -130 degrees C up to increasing final temperatures, in a frequency range between 20 Hz and 1 MHz. Essentially, three relaxation processes were detected in the temperature range covered: (i) a beta-wet process, detected when the sample has a higher water content that vanishes after heating to 150 degrees C; (ii) a beta process, which is located at temperatures below 0 degrees C, becoming better defined and maintaining its location after annealing at 150 degrees C independently of the protonation state of the amino side group; and (iii) a sigma process that deviates to higher temperatures with drying, being more mobile in the nonneutralized form. Moreover, in dried neutralized chitosan, a fourth process was detected in the low frequency side of the secondary beta process that diminishes after annealing. Whether this process is a distinct relaxation of the dried polymer or a deviated beta-wet process due to the loss of water residues achieved by annealing is not straightforward. Only beta and sigma processes persist after annealing at 150 degrees C. The changes in molecular mobility upon drying of these two relaxation processes were evaluated. Copyright (c) 2005 Wiley Periodicals, Inc.

Functional fatigue behavior of superelastic beta Ti-22Nb-6Zr(at%) alloy for load-bearing biomedical applications.

PubMed

Sheremetyev, V; Brailovski, V; Prokoshkin, S; Inaekyan, K; Dubinskiy, S

2016-01-01

Ti-22Nb-6Zr (at.%) alloy with different processing-induced microstructures (highly-dislocated partially recovered substructure, polygonized nanosubgrained (NSS) dislocation substructure, and recrystallized structure) was subjected to strain-controlled tension-tension fatigue testing in the 0.2...1.5% strain range (run-out at 10^6 cycles). The NSS alloy obtained after cold-rolling with 0.3 true strain and post-deformation annealing at 600 °C showed the lowest Young's modulus and globally superior fatigue performance due to the involvement of reversible stress-induced martensitic transformation in the deformation process. This NSS structure appears to be suitable for biomedical applications with an extended variation range of loading conditions (orthopedic implants). Copyright © 2015 Elsevier B.V. All rights reserved.

Inert gas annealing effect in solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Lee, Seungwoon; Jeong, Jaewook

2017-08-01

In this paper, the annealing effect of solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs), under ambient He (He-device), is systematically analyzed by comparison with those under ambient O2 (O2-device) and N2 (N2-device), respectively. The He-device shows high field-effect mobility and low subthreshold slope owing to the minimization of the ambient effect. The degradation of the O2- and N2-device performances originate from their respective deep acceptor-like and shallow donor-like characteristics, which can be verified by comparison with the He-device. However, the three devices show similar threshold voltage instability under prolonged positive bias stress due to the effect of excess oxygen. Therefore, annealing in ambient He is the most suitable method for the fabrication of reference TFTs to study the various effects of the ambient during the annealing process in solution-processed a-IGZO TFTs.

Unipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO2/TaN memory device

NASA Astrophysics Data System (ADS)

Tsai, Tsung-Ling; Ho, Tsung-Han; Tseng, Tseung-Yuen

2015-01-01

The effects of Ni/ZrO2/TaN resistive switching memory devices without and with a 400 °C annealing process on switching properties are investigated. The devices exhibit unipolar resistive switching behaviors with low set and reset voltages because of a large amount of Ni diffusion with no reaction with ZrO2 after the annealing process, which is confirmed by ToF-SIMS and XPS analyses. A physical model based on a Ni filament is constructed to explain such phenomena. The device that undergoes the 400 °C annealing process exhibits an excellent endurance of more than 1.5  ×  104 cycles. The improvement can be attributed to the enhancement of oxygen ion migration along grain boundaries, which result in less oxygen ion consumption during the reset process. The device also performs good retention up to 105 s at 150 °C. Therefore, it has great potential for high-density nonvolatile memory applications.

Exponential Speedup of Quantum Annealing by Inhomogeneous Driving of the Transverse Field

NASA Astrophysics Data System (ADS)

Susa, Yuki; Yamashiro, Yu; Yamamoto, Masayuki; Nishimori, Hidetoshi

2018-02-01

We show, for quantum annealing, that a certain type of inhomogeneous driving of the transverse field erases first-order quantum phase transitions in the p-body interacting mean-field-type model with and without longitudinal random field. Since a first-order phase transition poses a serious difficulty for quantum annealing (adiabatic quantum computing) due to the exponentially small energy gap, the removal of first-order transitions means an exponential speedup of the annealing process. The present method may serve as a simple protocol for the performance enhancement of quantum annealing, complementary to non-stoquastic Hamiltonians.

Structural and electrical properties of Se-hyperdoped Si via ion implantation and flash lamp annealing

NASA Astrophysics Data System (ADS)

Liu, Fang; Prucnal, S.; Yuan, Ye; Heller, R.; Berencén, Y.; Böttger, R.; Rebohle, L.; Skorupa, W.; Helm, M.; Zhou, S.

2018-06-01

We report on the hyperdoping of silicon with selenium obtained by ion implantation followed by flash lamp annealing. It is shown that the degree of crystalline lattice recovery of the implanted layers and the Se substitutional fraction depend on the pulse duration and energy density of the flash. While the annealing at low energy densities leads to an incomplete recrystallization, annealing at high energy densities results in a decrease of the substitutional fraction of impurities. The electrical properties of the implanted layers are well-correlated with the structural properties resulting from different annealing processing.

Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO-₂x Thin Films.

PubMed

Wang, Chun-Min; Huang, Chun-Chieh; Kuo, Jui-Chao; Sahu, Dipti Ranjan; Huang, Jow-Lay

2015-08-14

Tin oxide (SnO 2-x ) thin films were prepared under various flow ratios of O₂/(O₂ + Ar) on unheated glass substrate using the ion beam sputtering (IBS) deposition technique. This work studied the effects of the flow ratio of O₂/(O₂ + Ar), chamber pressures and post-annealing treatment on the physical properties of SnO₂ thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM). Auger electron spectroscopy (AES) analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor.

Atomic-resolution characterization of the effects of CdCl2 treatment on poly-crystalline CdTe thin films

NASA Astrophysics Data System (ADS)

Paulauskas, T.; Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Chan, M. K. Y.; Klie, R. F.

2014-08-01

Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl2 environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl2, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

Microstructure based simulations for prediction of flow curves and selection of process parameters for inter-critical annealing in DP steel

NASA Astrophysics Data System (ADS)

Deepu, M. J.; Farivar, H.; Prahl, U.; Phanikumar, G.

2017-04-01

Dual phase steels are versatile advanced high strength steels that are being used for sheet metal applications in automotive industry. It also has the potential for application in bulk components like gear. The inter-critical annealing in dual phase steels is one of the crucial steps that determine the mechanical properties of the material. Selection of the process parameters for inter-critical annealing, in particular, the inter-critical annealing temperature and time is important as it plays a major role in determining the volume fractions of ferrite and martensite, which in turn determines the mechanical properties. Selection of these process parameters to obtain a particular required mechanical property requires large number of experimental trials. Simulation of microstructure evolution and virtual compression/tensile testing can help in reducing the number of such experimental trials. In the present work, phase field modeling implemented in the commercial software Micress® is used to predict the microstructure evolution during inter-critical annealing. Virtual compression tests are performed on the simulated microstructure using finite element method implemented in the commercial software, to obtain the effective flow curve of the macroscopic material. The flow curves obtained by simulation are experimentally validated with physical simulation in Gleeble® and compared with that obtained using linear rule of mixture. The methodology could be used in determining the inter-critical annealing process parameters required for achieving a particular flow curve.

SAGRAD: A Program for Neural Network Training with Simulated Annealing and the Conjugate Gradient Method.

PubMed

Bernal, Javier; Torres-Jimenez, Jose

2015-01-01

SAGRAD (Simulated Annealing GRADient), a Fortran 77 program for computing neural networks for classification using batch learning, is discussed. Neural network training in SAGRAD is based on a combination of simulated annealing and Møller's scaled conjugate gradient algorithm, the latter a variation of the traditional conjugate gradient method, better suited for the nonquadratic nature of neural networks. Different aspects of the implementation of the training process in SAGRAD are discussed, such as the efficient computation of gradients and multiplication of vectors by Hessian matrices that are required by Møller's algorithm; the (re)initialization of weights with simulated annealing required to (re)start Møller's algorithm the first time and each time thereafter that it shows insufficient progress in reaching a possibly local minimum; and the use of simulated annealing when Møller's algorithm, after possibly making considerable progress, becomes stuck at a local minimum or flat area of weight space. Outlines of the scaled conjugate gradient algorithm, the simulated annealing procedure and the training process used in SAGRAD are presented together with results from running SAGRAD on two examples of training data.

MoO3 Thickness, Thermal Annealing and Solvent Annealing Effects on Inverted and Direct Polymer Photovoltaic Solar Cells

PubMed Central

Chambon, Sylvain; Derue, Lionel; Lahaye, Michel; Pavageau, Bertrand; Hirsch, Lionel; Wantz, Guillaume

2012-01-01

Several parameters of the fabrication process of inverted polymer bulk heterojunction solar cells based on titanium oxide as an electron selective layer and molybdenum oxide as a hole selective layer were tested in order to achieve efficient organic photovoltaic solar cells. Thermal annealing treatment is a common process to achieve optimum morphology, but it proved to be damageable for the performance of this kind of inverted solar cells. We demonstrate using Auger analysis combined with argon etching that diffusion of species occurs from the MoO3/Ag top layers into the active layer upon thermal annealing. In order to achieve efficient devices, the morphology of the bulk heterojunction was then manipulated using the solvent annealing technique as an alternative to thermal annealing. The influence of the MoO3 thickness was studied on inverted, as well as direct, structure. It appeared that only 1 nm-thick MoO3 is enough to exhibit highly efficient devices (PCE = 3.8%) and that increasing the thickness up to 15 nm does not change the device performance.

High Mobility Flexible Amorphous IGZO Thin-Film Transistors with a Low Thermal Budget Ultra-Violet Pulsed Light Process.

PubMed

Benwadih, M; Coppard, R; Bonrad, K; Klyszcz, A; Vuillaume, D

2016-12-21

Amorphous, sol-gel processed, indium gallium zinc oxide (IGZO) transistors on plastic substrate with a printable gate dielectric and an electron mobility of 4.5 cm 2 /(V s), as well as a mobility of 7 cm 2 /(V s) on solid substrate (Si/SiO 2 ) are reported. These performances are obtained using a low temperature pulsed light annealing technique. Ultraviolet (UV) pulsed light system is an innovative technique compared to conventional (furnace or hot-plate) annealing process that we successfully implemented on sol-gel IGZO thin film transistors (TFTs) made on plastic substrate. The photonic annealing treatment has been optimized to obtain IGZO TFTs with significant electrical properties. Organic gate dielectric layers deposited on this pulsed UV light annealed films have also been optimized. This technique is very promising for the development of amorphous IGZO TFTs on plastic substrates.

A helium-based model for the effects of radiation damage annealing on helium diffusion kinetics in apatite

NASA Astrophysics Data System (ADS)

Willett, Chelsea D.; Fox, Matthew; Shuster, David L.

2017-11-01

Widely used to study surface processes and the development of topography through geologic time, (U-Th)/He thermochronometry in apatite depends on a quantitative description of the kinetics of 4He diffusion across a range of temperatures, timescales, and geologic scenarios. Empirical observations demonstrate that He diffusivity in apatite is not solely a function of temperature, but also depends on damage to the crystal structure from radioactive decay processes. Commonly-used models accounting for the influence of thermal annealing of radiation damage on He diffusivity assume the net effects evolve in proportion to the rate of fission track annealing, although the majority of radiation damage results from α-recoil. While existing models adequately quantify the net effects of damage annealing in many geologic scenarios, experimental work suggests different annealing rates for the two damage types. Here, we introduce an alpha-damage annealing model (ADAM) that is independent of fission track annealing kinetics, and directly quantifies the influence of thermal annealing on He diffusivity in apatite. We present an empirical fit to diffusion kinetics data and incorporate this fit into a model that tracks the competing effects of radiation damage accumulation and annealing on He diffusivity in apatite through geologic time. Using time-temperature paths to illustrate differences between models, we highlight the influence of damage annealing on data interpretation. In certain, but not all, geologic scenarios, the interpretation of low-temperature thermochronometric data can be strongly influenced by which model of radiation damage annealing is assumed. In particular, geologic scenarios involving 1-2 km of sedimentary burial are especially sensitive to the assumed rate of annealing and its influence on He diffusivity. In cases such as basement rocks in Grand Canyon and the Canadian Shield, (U-Th)/He ages predicted from the ADAM can differ by hundreds of Ma from those predicted by other models for a given thermal path involving extended residence between ∼40-80 °C.

Chemical characterization of surface precipitates in La0.7Sr0.3Co0.2Fe0.8O3-δ as cathode material for solid oxide fuel cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Yang; Nikiforov, Alexey Y.; Kaspar, Tiffany C.

2016-11-01

In this study, a strontium doped lanthanum cobalt ferrite thin film with 30% Sr on A-site, denoted as La0.7Sr0.3Co0.2Fe0.8O3-δ or LSCF-7328, was investigated before and after annealing at 800 °C under CO2 containing atmosphere for 9 hours. The formation of secondary phases on surface of post-annealed LSCF-7328 has been observed using atomic force microscope (AFM) and scanning electron microscope (SEM). The extent of Sr segregation at the film surface was observed using the synchrotron-based total reflection X-ray fluorescence (TXRF) technique. The bonding environment of the secondary phases formed on the surface was investigated by synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES).more » Transmission electron microscope (TEM) and related spectroscopy techniques were used for microstructural and quantitative elemental analyses of the secondary phases on surface. These studies revealed that the secondary phases on surface consisted of SrO covered with a capping layer of SrCO3. The formation of Co-rich phases has also been observed on the surface of post-annealed LSCF-7328.« less

Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi

We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The Al{sub 2}O{sub 3}/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (D{sub it}) of ∼4.5 × 10{sup 13 }cm{sup −2} eV{sup −1}. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situmore » ALD process to avoid the high-temperature-induced degradations.« less

The influence of flash lamp annealing on the minority carrier lifetime of Czochralski silicon wafers

NASA Astrophysics Data System (ADS)

Kissinger, G.; Kot, D.; Sattler, A.

2014-02-01

Flash lamp annealing of moderately B-doped CZ silicon wafers for 20 ms with a normalized irradiance of about 0.9 was used to efficiently suppress oxygen precipitation during subsequent thermal processing. In this way, the minority carrier lifetime measured at high injection level by microwave-detected photo-conductance decay (μ-PCD) was increased from about 30 microseconds to about 300 microseconds after a thermal process consisting of 780 °C 3 h + 1000 °C 16 h. The grown-in oxide precipitate nuclei were shrunken to a subcritical size during the flash lamp anneal which prevents further growth during subsequent thermal processing.

Combustion-Assisted Photonic Annealing of Printable Graphene Inks via Exothermic Binders.

PubMed

Secor, Ethan B; Gao, Theodore Z; Dos Santos, Manuel H; Wallace, Shay G; Putz, Karl W; Hersam, Mark C

2017-09-06

High-throughput and low-temperature processing of high-performance nanomaterial inks is an important technical challenge for large-area, flexible printed electronics. In this report, we demonstrate nitrocellulose as an exothermic binder for photonic annealing of conductive graphene inks, leveraging the rapid decomposition kinetics and built-in energy of nitrocellulose to enable versatile process integration. This strategy results in superlative electrical properties that are comparable to extended thermal annealing at 350 °C, using a pulsed light process that is compatible with thermally sensitive substrates. The resulting porous microstructure and broad liquid-phase patterning compatibility are exploited for printed graphene microsupercapacitors on paper-based substrates.

Properties of solid polymer electrolyte fluorocarbon film. [used in hydrogen/oxygen fuel cells

NASA Technical Reports Server (NTRS)

Alston, W. B.

1973-01-01

The ionic fluorocarbon film used as the solid polymer electrolyte in hydrogen/oxygen fuel cells was found to exhibit delamination failures. Polarized light microscopy of as-received film showed a lined region at the center of the film thickness. It is shown that these lines were not caused by incomplete saponification but probably resulted from the film extrusion process. The film lines could be removed by an annealing process. Chemical, physical, and tensile tests showed that annealing improved or sustained the water contents, spectral properties, thermo-oxidative stability, and tensile properties of the film. The resistivity of the film was significantly decreased by the annealing process.

An electron microscopy examination of primary recrystallization in TD-nickel.

NASA Technical Reports Server (NTRS)

Petrovic, J. J.; Ebert, L. J.

1972-01-01

Primary recrystallization in TD-nickel 1 in. bar has previously been regarded as the process by which the initial fine grain structure is converted to a coarse grain size (increases in grain size by 500 times) under suitable deformation and annealing conditions. This process is dependent on deformation mode. While it occurs readily after rolling transverse to the bar axis and annealing (800 C), it is completely inhibited by longitudinal rolling and swaging deformations, even for very high (1320 C) annealing temperatures. A transmission electron microscopy examination of deformation and annealing substructures indicates that primary recrystallization in TD-nickel 1 in. bar actually occurs on the sub-light optical level, to produce a grain structure similar in size to the initial fine grained state.

Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

NASA Astrophysics Data System (ADS)

Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

2018-01-01

The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

Influence of film structure on the dewetting kinetics of thin polymer films in the solvent annealing process.

PubMed

Zhang, Huanhuan; Xu, Lin; Lai, Yuqing; Shi, Tongfei

2016-06-28

On a non-wetting solid substrate, the solvent annealing process of a thin polymer film includes the swelling process and the dewetting process. Owing to difficulties in the in situ analysis of the two processes simultaneously, a quantitative study on the solvent annealing process of thin polymer films on the non-wetting solid substrate is extremely rare. In this paper, we design an experimental method by combining spectroscopic ellipsometry with optical microscopy to achieve the simultaneous in situ study. Using this method, we investigate the influence of the structure of swollen film on its dewetting kinetics during the solvent annealing process. The results show that for a thin PS film with low Mw (Mw = 4.1 kg mol(-1)), acetone molecules can form an ultrathin enriched layer between the PS film and the solid substrate during the swelling process. The presence of the acetone enriched layer accounts for the exponential kinetic behavior in the case of a thin PS film with low Mw. However, the acetone enriched layer is not observed in the case of a thin PS film with high Mw (Mw = 400 kg mol(-1)) and the slippage effect of polymer chains is valid during the dewetting process.

Thermomechanical Processing of Fe-6.9Al-2Cr-0.88C Steel: Intercritical Annealing Followed by Quench Tempering

NASA Astrophysics Data System (ADS)

Farahat, Ahmed Ismail Zaky; Mohamed, Masoud Ibrahim

2015-01-01

A hot forged Fe-0.88 pct C-6.9 pct Al steel was intercritically annealed at temperatures in the range of 1173 K to 1283 K (900 °C to 1010 °C), and subsequently tempered at 623 K (350 °C) to enhance the mechanical properties by microstructure modification. Room temperature compression tests were carried out to evaluate the influence of the intercritical annealing temperature on the mechanical properties. A substructure was present in the microstructure after each intercritical annealing treatment. The substructure was absent after annealing at 1263 K (990 °C) and higher temperatures. Over-aging occurred when the annealing temperature was increased to 1283 K (1010 °C). A remarkable increase in strength and ductility was achieved after annealing at 1263 K (990 °C).

Development of microstructure and mechanical properties during annealing of a cold-swaged Co-Cr-Mo alloy rod.

PubMed

Mori, Manami; Sato, Nanae; Yamanaka, Kenta; Yoshida, Kazuo; Kuramoto, Koji; Chiba, Akihiko

2016-12-01

In this study, we investigated the evolution of the microstructure and mechanical properties during annealing of a cold-swaged Ni-free Co-Cr-Mo alloy for biomedical applications. A Co-28Cr-6Mo-0.14N-0.05C (mass%) alloy rod was processed by cold swaging, with a reduction in area of 27.7%, and then annealed at 1173-1423K for various periods up to 6h. The duplex microstructure of the cold-swaged rod consisted of a face-centered cubic γ-matrix and hexagonal closed-packed ε-martensite developed during cold swaging. This structure transformed nearly completely to the γ-phase after annealing and many annealing twin boundaries were observed as a result of the heat treatment. A small amount of the ε-phase was identified in specimens annealed at 1173K. Growth of the γ-grains occurred with increasing annealing time at temperatures ≥1273K. Interestingly, the grain sizes remained almost unchanged at 1173K and a very fine grain size of approximately 8μm was obtained. The precipitation that occurred during annealing was attributed to the limited grain coarsening during heat treatment. Consequently, the specimens treated at this temperature showed the highest tensile strength and lowest ductility among the specimens prepared. An elongation-to-failure value larger than 30% is sufficient for the proposed applications. The other specimens treated at higher temperatures possessed similar tensile properties and did not show any significant variations with different annealing times. Optimization of the present rod manufacturing process, including cold swaging and interval annealing heat treatment, is discussed. Copyright © 2016 Elsevier Ltd. All rights reserved.

Competitive annealing of multiple DNA origami: formation of chimeric origami

NASA Astrophysics Data System (ADS)

Majikes, Jacob M.; Nash, Jessica A.; LaBean, Thomas H.

2016-11-01

Scaffolded DNA origami are a robust tool for building discrete nanoscale objects at high yield. This strategy ensures, in the design process, that the desired nanostructure is the minimum free energy state for the designed set of DNA sequences. Despite aiming for the minimum free energy structure, the folding process which leads to that conformation is difficult to characterize, although it has been the subject of much research. In order to shed light on the molecular folding pathways, this study intentionally frustrates the folding process of these systems by simultaneously annealing the staple pools for multiple target or parent origami structures, forcing competition. A surprising result of these competitive, simultaneous anneals is the formation of chimeric DNA origami which inherit structural regions from both parent origami. By comparing the regions inherited from the parent origami, relative stability of substructures were compared. This allowed examination of the folding process with typical characterization techniques and materials. Anneal curves were then used as a means to rapidly generate a phase diagram of anticipated behavior as a function of staple excess and parent staple ratio. This initial study shows that competitive anneals provide an exciting way to create diverse new nanostructures and may be used to examine the relative stability of various structural motifs.

Efficiency of quantum vs. classical annealing in nonconvex learning problems

PubMed Central

Zecchina, Riccardo

2018-01-01

Quantum annealers aim at solving nonconvex optimization problems by exploiting cooperative tunneling effects to escape local minima. The underlying idea consists of designing a classical energy function whose ground states are the sought optimal solutions of the original optimization problem and add a controllable quantum transverse field to generate tunneling processes. A key challenge is to identify classes of nonconvex optimization problems for which quantum annealing remains efficient while thermal annealing fails. We show that this happens for a wide class of problems which are central to machine learning. Their energy landscapes are dominated by local minima that cause exponential slowdown of classical thermal annealers while simulated quantum annealing converges efficiently to rare dense regions of optimal solutions. PMID:29382764

Single-aliquot EPR dosimetry of wallboard (drywall).

PubMed

Mistry, R; Thompson, J W; Boreham, D R; Rink, W J

2011-11-01

Electron paramagnetic resonance spectra and dose-response curves are presented for a variety of wallboard samples obtained from different manufacturing facilities, as well as for source gypsum and anhydrite. The intensity of the CO(3)(-) paramagnetic centre (G2) is enhanced with gamma radiation. Isothermal decay curves are used to propose annealing methods for the removal of the radiosensitive CO(3)(-) radical without affecting the unirradiated baseline. Post-irradiation annealing of wallboard prevents recuperation of the radiosensitive CO(3)(-) radical with additional irradiation. A single-aliquot additive dose procedure is developed that successfully measures test doses as low as 0.76 Gy.

In situ growth of sol-gel-derived nano-VO2 film and its phase transition characteristics

NASA Astrophysics Data System (ADS)

Shi, Qiwu; Huang, Wanxia; Lu, Tiecheng; Yue, Fang; Xiao, Yang; Hu, Yanyan

2014-10-01

We reported the growth of VO2 film deposited by an inorganic sol-gel method, followed by post-annealing. An in situ evolution of the grain size in the films with different annealing temperatures (300, 500, and 700 °C for 90 min), annealing times (500 °C for 20, 40, 60, and 90 min), and film thicknesses (30, 150 and 320 nm) was observed. The results indicated that the grain size distribution in the sol-gel-derived VO2 films was mediated by the density of nucleation center, which was varied in the films with different extents of thermal deformation during the annealing. By increasing the film thickness from 30 to 320 nm, a compact nanostructure with uniform distribution of grain size could be formed. It suggested that the in situ-evolved nanostructure in the thicker VO2 film will lead to lower threshold temperature and enhanced transition intensity in the phase transition. The effect of nanoscale grain size on the lower phase transition temperature in the VO2 film was discussed.

Effect of annealing on the structural and optical properties of TiO{sub 2} powder prepared by sol-gel route

DOE Office of Scientific and Technical Information (OSTI.GOV)

Halder, Nilanjan; Misra, Kamakhya Prakash

2016-05-06

Using titanium isopropoxide as the precursor, Titanium dioxide (TiO{sub 2}) powder was synthesized via sol-gel method, a promising low temperature route for preparing nanosized metal oxide semiconductors with good homogeneity at low cost. The as-prepared nano powder was thermally treated in air at 550, 650, 750, 900 and 1100°C for 1hr after drying at room temperature and used for further characterization. X-ray diffraction measurements showed that the annealing treatment has a strong impact on the crystal phase of TiO{sub 2} samples. The crystallite size as calculated from Debye Scherer formula lies in the range 29-69 nm and is found to increasemore » with increase in annealing temperature. Photoluminescence studies exhibit an improvement in the optical efficiency of the samples with post synthesis heat treatment. Annealing at temperature above 900°C results in a degradation of the structural and optical quality of the TiO{sub 2} nano powder samples.« less

Effect of annealing temperature on the structural, morphological, and mechanical properties of polycrystalline zirconium oxynitride composite films deposited by plasma focus device

NASA Astrophysics Data System (ADS)

Khan, Ijaz A.; Kashif, Muhammad; Farid, Amjad; Rawat, Rajdeep S.; Ahmad, Riaz

2017-12-01

In this article, we reveal the post deposition annealing effect on the structural, morphological, and mechanical properties of polycrystalline zirconium oxynitride (P-ZrON) composite films deposited for 40 focus shots using a plasma focus device. The development of Zr(101), ZrN(111), ZrN(200), Zr3N4(320), ZrN0.28(002), and m-ZrO2(200) diffraction peaks confirms the deposition of P-ZrON composite films. The peak intensity, crystallite size, dislocation density, compressive stress, and texture coefficient of the Zr3N4(320) plane and the microstructural features such as the shape, size and distribution of nanoparticles as well as the film compactness are influenced by the annealing temperature. Elemental analysis confirms the presence of Zr, N, and O in the deposited films. The microhardness of the P-ZrON composite film annealed at 500 °C is found to be 11.87 GPa which is 7.8 times that of virgin zirconium.

Characterization of Cu2ZnSnS4 thin films prepared by photo-chemical deposition

NASA Astrophysics Data System (ADS)

Moriya, Katsuhiko; Watabe, Jyunichi; Tanaka, Kunihiko; Uchiki, Hisao

2006-09-01

Cu2ZnSnS4 (CZTS) thin films were prepared by post-annealing films of metal sulfides of Cu2S, ZnS and SnS2 precursors deposited on soda-lime glass substrates by photo-chemical deposition (PCD) from aqueous solution containing CuSO4, ZnSO4, SnSO4 and Na2S2O3. In this study, sulfurization was employed to prepare high quality CZTS thin films. Deposited films of metal sulfides were annealed in a furnace in an atmosphere of N2 or N2+H2S(5%) at the temperature of 300°, 400° or 500 °C. The sulfured films showed X-ray diffraction peaks from (112), (220), and (312) planes of CZTS and the peaks became sharp by an increase in the sulfurization temperature. CZTS thin film annealed in atmosphere of N2 was S-poor. After annealing atmosphere was changed from N2 into N2+H2S(5%), the decrease of a composi- tional ratio of sulfur could be suppressed.

Isochronal annealing effects on local structure, crystalline fraction, and undamaged region size of radiation damage in Ga-stabilized δ-Pu

DOE PAGES

Olive, D. T.; Booth, C. H.; Wang, D. L.; ...

2016-07-19

The effects on the local structure due to self-irradiation damage of Ga stabilized δ-Pu stored at cryogenic temperatures have been examined using extended x-ray absorption fine structure (EXAFS) experiments. Extensive damage, seen as a loss of local order, was evident after 72 days of storage below 15 K. The effect was observed from both the Pu and the Ga sites, although less pronounced around Ga. Isochronal annealing was performed on this sample to study the annealing processes that occur between cryogenic and room temperature storage conditions, where damage is mostly reversed. Damage fractions at various points along the annealing curvemore » have been determined using an amplitude-ratio method, a standard EXAFS fitting, and a spherical crystallite model, and provide information complementary to the previous electrical resistivity- and susceptibility-based isochronal annealing studies. The use of a spherical crystallite model accounts for the changes in EXAFS spectra using just two parameters, namely, the crystalline fraction and the particle radius. Altogether, these results are discussed in terms of changes to the local structure around Ga and Pu throughout the annealing process and highlight the unusual role of Ga in the behavior of the lowest temperature anneals.« less

Isochronal annealing effects on local structure, crystalline fraction, and undamaged region size of radiation damage in Ga-stabilized δ-Pu

DOE Office of Scientific and Technical Information (OSTI.GOV)

Olive, D. T.; Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545; Wang, D. L.

2016-07-21

The effects on the local structure due to self-irradiation damage of Ga stabilized δ-Pu stored at cryogenic temperatures have been examined using extended x-ray absorption fine structure (EXAFS) experiments. Extensive damage, seen as a loss of local order, was evident after 72 days of storage below 15 K. The effect was observed from both the Pu and the Ga sites, although less pronounced around Ga. Isochronal annealing was performed on this sample to study the annealing processes that occur between cryogenic and room temperature storage conditions, where damage is mostly reversed. Damage fractions at various points along the annealing curve havemore » been determined using an amplitude-ratio method, a standard EXAFS fitting, and a spherical crystallite model, and provide information complementary to the previous electrical resistivity- and susceptibility-based isochronal annealing studies. The use of a spherical crystallite model accounts for the changes in EXAFS spectra using just two parameters, namely, the crystalline fraction and the particle radius. Together, these results are discussed in terms of changes to the local structure around Ga and Pu throughout the annealing process and highlight the unusual role of Ga in the behavior of the lowest temperature anneals.« less

Reduced water vapor transmission rates of low-temperature solution-processed metal oxide barrier films via ultraviolet annealing

NASA Astrophysics Data System (ADS)

Park, Seonuk; Jeong, Yong Jin; Baek, Yonghwa; Kim, Lae Ho; Jang, Jin Hyuk; Kim, Yebyeol; An, Tae Kyu; Nam, Sooji; Kim, Se Hyun; Jang, Jaeyoung; Park, Chan Eon

2017-08-01

Here, we report the fabrication of low-temperature sol-gel-derived aluminum oxide (AlOx) films via ultraviolet (UV) annealing and the investigation of their water vapor blocking properties by measuring the water vapor transmission rates (WVTRs). The UV annealing process induced the formation of a dense metal-oxygen-metal bond (Al-O-Al structure) at low temperatures (<200 °C) that are compatible with commercial plastic substrates. The density of the UV-annealed AlOx thin film at 180 °C was comparable to that of AlOx thin films that have been thermally annealed at 350 °C. Furthermore, the UV-annealed AlOx thin films exhibited a high optical transparency in the visible region (>99%) and good electrical insulating properties (∼10-7 A/cm2 at 2 MV/cm). Finally, we confirmed that a dense AlOx thin film was successfully deposited onto the plastic substrate via UV annealing at low temperatures, leading to a substantial reduction in the WVTRs. The Ca corrosion test was used to measure the WVTRs of AlOx thin films deposited onto polyethylene naphthalate or polyimide substrates, determined to be 0.0095 g m-2 day-1 (25 °C, 50% relative humidity) and 0.26 g m-2 day-1, respectively.

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

NASA Astrophysics Data System (ADS)

Greenlee, Jordan D.; Feigelson, Boris N.; Anderson, Travis J.; Tadjer, Marko J.; Hite, Jennifer K.; Mastro, Michael A.; Eddy, Charles R.; Hobart, Karl D.; Kub, Francis J.

2014-08-01

The first step of a multi-cycle rapid thermal annealing process was systematically studied. The surface, structure, and optical properties of Mg implanted GaN thin films annealed at temperatures ranging from 900 to 1200 °C were investigated by Raman spectroscopy, photoluminescence, UV-visible spectroscopy, atomic force microscopy, and Nomarski microscopy. The GaN thin films are capped with two layers of in-situ metal organic chemical vapor deposition -grown AlN and annealed in 24 bar of N2 overpressure to avoid GaN decomposition. The crystal quality of the GaN improves with increasing annealing temperature as confirmed by UV-visible spectroscopy and the full widths at half maximums of the E2 and A1 (LO) Raman modes. The crystal quality of films annealed above 1100 °C exceeds the quality of the as-grown films. At 1200 °C, Mg is optically activated, which is determined by photoluminescence measurements. However, at 1200 °C, the GaN begins to decompose as evidenced by pit formation on the surface of the samples. Therefore, it was determined that the optimal temperature for the first step in a multi-cycle rapid thermal anneal process should be conducted at 1150 °C due to crystal quality and surface morphology considerations.

V6O13 films by control of the oxidation state from aqueous precursor to crystalline phase.

PubMed

Peys, Nick; Ling, Yun; Dewulf, Daan; Gielis, Sven; De Dobbelaere, Christopher; Cuypers, Daniel; Adriaensens, Peter; Van Doorslaer, Sabine; De Gendt, Stefan; Hardy, An; Van Bael, Marlies K

2013-01-28

An aqueous deposition process for V(6)O(13) films is developed whereby the vanadium oxidation state is continuously controlled throughout the entire process. In the precursor stage, a controlled wet chemical reduction of the vanadium(V) source with oxalic acid is achieved and monitored by (51)Vanadium Nuclear Magnetic Resonance ((51)V-NMR) and Ultraviolet-Visible (UV-Vis) spectroscopy. The resulting vanadium(IV) species in the aqueous solution are identified as mononuclear citrato-oxovanadate(IV) complexes by Electron Paramagnetic Resonance (EPR) and Fourier Transform Infra-Red (FTIR) spectroscopy. This precursor is successfully employed for the deposition of uniform, thin films. The optimal deposition and annealing conditions for the formation of crystalline V(6)O(13), including the control of the vanadium oxidation state, are determined through an elaborate study of processing temperature and O(2) partial pressure. To ensure a sub 100 nm adjustable film thickness, a non-oxidative intermediate thermal treatment is carried out at the end of each deposition cycle, allowing maximal precursor decomposition while still avoiding V(IV) oxidation. The resulting surface hydrophilicity, indispensable for the homogeneous deposition of the next layer, is explained by an increased surface roughness and the increased availability of surface vanadyl groups. Crystalline V(6)O(13) with a preferential (002) orientation is obtained after a post deposition annealing in a 0.1% O(2) ambient for thin films with a thickness of 20 nm.

Electrical properties of radio-frequency sputtered HfO2 thin films for advanced CMOS technology

NASA Astrophysics Data System (ADS)

Sarkar, Pranab Kumar; Roy, Asim

2015-08-01

The Hafnium oxide (HfO2) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GI-XRD analysis revealed that at annealing temperatures of 350°C, films phases change to crystalline from amorphous. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the annealed HfO2 film have been studied employing Al/HfO2/p-Si metal-oxide-semiconductor (MOS) structures. The electrical properties such as dielectric constant, interface trap density and leakage current density have been also extracted from C-V and I-V Measurements. The value of dielectric constant, interface trap density and leakage current density of annealed HfO2 film is obtained as 23,7.57×1011eV-1 cm-2 and 2.7×10-5 Acm-2, respectively. In this work we also reported the influence of post deposition annealing onto the trapping properties of hafnium oxide and optimized conditions under which no charge trapping is observed into the dielectric stack.

The local structure and ferromagnetism in Fe-implanted SrTiO3 single crystals

NASA Astrophysics Data System (ADS)

Lobacheva, O.; Chavarha, M.; Yiu, Y. M.; Sham, T. K.; Goncharova, L. V.

2014-07-01

We report a connection between the local structure of low-level Fe impurities and vacancies as the cause of ferromagnetic behavior observed in strontium titanate single crystals (STO), which were implanted with Fe and Si ions at different doses then annealed in oxygen. The effects of Fe doping and post-implantation annealing of STO were studied by X-ray Absorption Near Edge Structure (XANES) spectroscopy and Superconducting Quantum Interference Device magnetometry. XANES spectra for Fe and Ti K- and L-edge reveal the changes in the local environment of Fe and Ti following the implantation and annealing steps. The annealing in oxygen atmosphere partially healed implantation damages and changed the oxidation state of the implanted iron from metallic Fe0 to Fe2+/Fe3+ oxide. The STO single crystals were weak ferromagnets prior to implantation. The maximum saturation moment was obtained after our highest implantation dose of 2 × 1016 Fe atom/cm2, which could be correlated with the metallic Fe0 phases in addition to the presence of O/Ti vacancies. After recrystallization annealing, the ferromagnetic response disappears. Iron oxide phases with Fe2+ and Fe3+ corresponding to this regime were identified and confirmed by calculations using Real Space Multiple Scattering program (FEFF9).

Reversible and irreversible reactions of three oxygen precursors on InAs(0 0 1)-(4 × 2)/ c(8 × 2)

NASA Astrophysics Data System (ADS)

Clemens, Jonathon B.; Droopad, Ravi; Kummel, Andrew C.

2010-10-01

The substrate reactions of three common oxygen sources for gate oxide deposition on the group III rich InAs(0 0 1)-(4 × 2)/ c(8 × 2) surface are compared: water, hydrogen peroxide (HOOH), and isopropyl alcohol (IPA). Scanning tunneling microscopy reveals that surface atom displacement occurs in all cases, but via different mechanisms for each oxygen precursor. The reactions are examined as a function of post-deposition annealing temperature. Water reaction shows displacement of surface As atoms, but it does not fully oxidize the As; the reaction is reversed by high temperature (450 °C) annealing. Exposure to IPA and subsequent low-temperature annealing (100 °C) show the preferential reaction on the row features of InAs(0 0 1)-(4 × 2)/ c(8 × 2), but higher temperature anneals result in permanent surface atom displacement/etching. Etching of the substrate is observed with HOOH exposure for all annealing temperatures. While nearly all oxidation reactions on group IV semiconductors are irreversible, the group III rich surface of InAs(0 0 1) shows that oxidation displacement reactions can be reversible at low temperature, thereby providing a mechanism of self-healing during oxidation reactions.

SERS-active silver nanoparticle aggregates produced in high-iron float glass by ion exchange process

NASA Astrophysics Data System (ADS)

Karvonen, L.; Chen, Y.; Säynätjoki, A.; Taiviola, K.; Tervonen, A.; Honkanen, S.

2011-11-01

Silver nanoparticles were produced in iron containing float glasses by silver-sodium ion exchange and post-annealing. In particular, the effect of the concentration and the oxidation state of iron in the host glass on the nanoparticle formation was studied. After the nanoparticle fabrication process, the samples were characterized by optical absorption measurements. The samples were etched to expose nanoparticle aggregates on the surface, which were studied by optical microscopy and scanning electron microscopy. The SERS-activity of these glass samples was demonstrated and compared using a dye molecule Rhodamine 6G (R6G) as an analyte. The importance of the iron oxidation level for reduction process is discussed. The glass with high concentration of Fe 2+ ions was found to be superior in SERS applications of silver nanoparticles. The optimal surface features in terms of SERS enhancement are also discussed.

Silicon Dioxide Planarization: Impacts on Optical Coatings for High Energy Laser

NASA Astrophysics Data System (ADS)

Day, Travis E.

The work of this thesis is devoted to examining the impact of silicon dioxide (silica or SiO2) planarization on the optical properties and laser damage resistance of thin-film coatings. SiO2 planarization is a process to smooth out fluence limiting nodular defects within multilayer coatings for high-energy laser applications. Mitigating these defects will improve the power handling abilities and improve the lifetime of laser coatings. Presented here is a combination of work with the aim of evaluating the optical and laser damage properties of SiO2 planarization within single layers, bilayers, and multilayers. As compared to control (non-planarized) samples, a 2-3x increase in the thin-film absorption, which decreases with post-process annealing, was discovered for SiO2 planarized samples. This suggests that planarization creates oxygen-related defects which can be annealed out and little impurity implantation. Investigations of laser damage resistance were carried out at lambda = 1030nm and pulse durations of tau = 220ps and 9ps. The laser damage of single and bilayer coatings is known to be dependent on the substrate-coating interface and this is further evidenced within this thesis. This is because the effects of planarization are masked by the extrinsic laser damage processes within the single and bilayers. Slight change (< 15%) in the laser induced damage threshold (LIDT) at 220ps and 9ps was observed for planarized single and bilayers. Depending on coating design, post-process annealing was shown to increase the LIDT by 10% to 75% at 220ps and 10% to 45% at 9ps. Although the fused silica substrate surface LIDT was shown to follow the √tau pulse scaling law for pulses above 10ps, the single and bilayer coatings do not follow this pulse scaling. The divergence from the √tau pulse scaling on the coatings suggests a variation in the laser damage initiation mechanisms between 220ps and 9ps. Multilayer high-reflecting (HR) mirrors with varying planarization design were also damage tested. A 6-7 J/cm2 LIDT, with 220ps, was observed for HR coatings with SiO2 planarization layers within high electric-field areas within the coating. However, SiO2 planarization at the substrate-coating interface, where the electric-field is minimal, and control (non-planarized) was shown to have a LIDT of 63 +/- 1.2 J/cm 2 and 21.5 +/- 0.5 J/cm2 for 220ps, respectively. At 9ps, the LIDT varied less than 90% difference between the various planarization designs. The substrate-coating planarization multilayer and control coating had an equal LIDT of 9.6 +/- .3 J/cm2 at 9ps.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leppäniemi, J., E-mail: jaakko.leppaniemi@vtt.fi; Ojanperä, K.; Kololuoma, T.

We propose a combined far ultraviolet (FUV) and thermal annealing method of metal-nitrate-based precursor solutions that allows efficient conversion of the precursor to metal-oxide semiconductor (indium zinc oxide, IZO, and indium oxide, In{sub 2}O{sub 3}) both at low-temperature and in short processing time. The combined annealing method enables a reduction of more than 100 °C in annealing temperature when compared to thermally annealed reference thin-film transistor (TFT) devices of similar performance. Amorphous IZO films annealed at 250 °C with FUV for 5 min yield enhancement-mode TFTs with saturation mobility of ∼1 cm{sup 2}/(V·s). Amorphous In{sub 2}O{sub 3} films annealed for 15 min with FUV atmore » temperatures of 180 °C and 200 °C yield TFTs with low-hysteresis and saturation mobility of 3.2 cm{sup 2}/(V·s) and 7.5 cm{sup 2}/(V·s), respectively. The precursor condensation process is clarified with x-ray photoelectron spectroscopy measurements. Introducing the FUV irradiation at 160 nm expedites the condensation process via in situ hydroxyl radical generation that results in the rapid formation of a continuous metal-oxygen-metal structure in the film. The results of this paper are relevant in order to upscale printed electronics fabrication to production-scale roll-to-roll environments.« less

Rapid Annealing Of Amorphous Hydrogenated Carbon

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Pouch, John J.; Warner, Joseph D.

1989-01-01

Report describes experiments to determine effects of rapid annealing on films of amorphous hydrogenated carbon. Study represents first efforts to provide information for applications of a-C:H films where rapid thermal processing required. Major finding, annealing causes abrupt increase in absorption and concomitant decrease in optical band gap. Most of change occurs during first 20 s, continues during longer annealing times. Extend of change increases with annealing temperature. Researchers hypothesize abrupt initial change caused by loss of hydrogen, while gradual subsequent change due to polymerization of remaining carbon into crystallites or sheets of graphite. Optical band gaps of unannealed specimens on silicon substrates lower than those of specimens on quartz substrates.

Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ayedh, H. M.; Svensson, B. G.; Hallén, A.

The carbon vacancy (V{sub C}) is a prevailing point defect in high-purity 4H-SiC epitaxial layers, and it plays a decisive role in controlling the charge carrier lifetime. One concept of reducing the V{sub C}-concentration is based on carbon self-ion implantation in a near surface layer followed by thermal annealing. This leads to injection of carbon interstitials (C{sub i}'s) and annihilation of V{sub C}'s in the epi-layer “bulk”. Here, we show that the excess of C atoms introduced by the self-ion implantation plays a negligible role in the V{sub C} annihilation. Actually, employing normalized implantation conditions with respect to displaced Cmore » atoms, other heavier ions like Al and Si are found to be more efficient in annihilating V{sub C}'s. Concentrations of V{sub C} below ∼2 × 10{sup 11} cm{sup −3} can be reached already after annealing at 1400 °C, as monitored by deep-level transient spectroscopy. This corresponds to a reduction in the V{sub C}-concentration by about a factor of 40 relative to the as-grown state of the epi-layers studied. The negligible role of the implanted species itself can be understood from simulation results showing that the concentration of displaced C atoms exceeds the concentration of implanted species by two to three orders of magnitude. The higher efficiency for Al and Si ions is attributed to the generation of collision cascades with a sufficiently high energy density to promote C{sub i}-clustering and reduce dynamic defect annealing. These C{sub i}-related clusters will subsequently dissolve during the post-implant annealing giving rise to enhanced C{sub i} injection. However, at annealing temperatures above 1500 °C, thermodynamic equilibrium conditions start to apply for the V{sub C}-concentration, which limit the net effect of the C{sub i} injection, and a competition between the two processes occurs.« less

Controlling superconductivity in La 2-xSr xCuO 4+δ by ozone and vacuum annealing

DOE PAGES

Leng, Xiang; Bozovic, Ivan

2014-11-21

In this study we performed a series of ozone and vacuum annealing experiments on epitaxial La 2-xSr xCuO 4+δ thin films. The transition temperature after each annealing step has been measured by the mutual inductance technique. The relationship between the effective doping and the vacuum annealing time has been studied. Short-time ozone annealing at 470 °C oxidizes an underdoped film all the way to the overdoped regime. The subsequent vacuum annealing at 350 °C to 380 °C slowly brings the sample across the optimal doping point back to the undoped, non-superconducting state. Several ozone and vacuum annealing cycles have beenmore » done on the same sample and the effects were found to be repeatable and reversible Vacuum annealing of ozone-loaded LSCO films is a very controllable process, allowing one to tune the doping level of LSCO in small steps across the superconducting dome, which can be used for fundamental physics studies.« less

Controlling superconductivity in La 2-xSr xCuO 4+δ by ozone and vacuum annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leng, Xiang; Bozovic, Ivan

In this study we performed a series of ozone and vacuum annealing experiments on epitaxial La 2-xSr xCuO 4+δ thin films. The transition temperature after each annealing step has been measured by the mutual inductance technique. The relationship between the effective doping and the vacuum annealing time has been studied. Short-time ozone annealing at 470 °C oxidizes an underdoped film all the way to the overdoped regime. The subsequent vacuum annealing at 350 °C to 380 °C slowly brings the sample across the optimal doping point back to the undoped, non-superconducting state. Several ozone and vacuum annealing cycles have beenmore » done on the same sample and the effects were found to be repeatable and reversible Vacuum annealing of ozone-loaded LSCO films is a very controllable process, allowing one to tune the doping level of LSCO in small steps across the superconducting dome, which can be used for fundamental physics studies.« less

Effect of Starting As-cast Structure on the Microstructure-Texture Evolution During Subsequent Processing and Finally Ridging Behavior of Ferritic Stainless Steel

NASA Astrophysics Data System (ADS)

Modak, Pranabananda; Patra, Sudipta; Mitra, Rahul; Chakrabarti, Debalay

2018-03-01

Effect of the initial as-cast structure on the microstructure-texture evolution during thermomechanical processing of 409L grade ferritic stainless steel was studied. Samples from the regions of cast slab having `columnar,' `equiaxed,' and a mixture of `columnar' and `equiaxed' grains were subjected to two different processing schedules: one with intermediate hot-band annealing before cold-rolling followed by final annealing, and another without any hot-band annealing. EBSD study reveals that large columnar crystals with cube orientation are very difficult to deform and recrystallize uniformly. Resultant variations in ferrite grain structure and retention of cube-textured band in cold-rolled and annealed sheet contribute to ridging behavior during stretch forming. Initial equiaxed grain structure is certainly beneficial to reduce or even eliminate ridging defect by producing uniform ferrite grain structure, free from any texture banding. Application of hot-band annealing treatment is also advantageous as it can maximize the evolution of beneficial gamma-fiber texture and eliminate the ridging defect in case of completely `equiaxed' starting structure. Such treatment reduces the severity of ridging even if the initial structure contains typically mixed `columnar-equiaxed' grains.

Effect of Starting As-cast Structure on the Microstructure-Texture Evolution During Subsequent Processing and Finally Ridging Behavior of Ferritic Stainless Steel

NASA Astrophysics Data System (ADS)

Modak, Pranabananda; Patra, Sudipta; Mitra, Rahul; Chakrabarti, Debalay

2018-06-01

Effect of the initial as-cast structure on the microstructure-texture evolution during thermomechanical processing of 409L grade ferritic stainless steel was studied. Samples from the regions of cast slab having `columnar,' `equiaxed,' and a mixture of `columnar' and `equiaxed' grains were subjected to two different processing schedules: one with intermediate hot-band annealing before cold-rolling followed by final annealing, and another without any hot-band annealing. EBSD study reveals that large columnar crystals with cube orientation are very difficult to deform and recrystallize uniformly. Resultant variations in ferrite grain structure and retention of cube-textured band in cold-rolled and annealed sheet contribute to ridging behavior during stretch forming. Initial equiaxed grain structure is certainly beneficial to reduce or even eliminate ridging defect by producing uniform ferrite grain structure, free from any texture banding. Application of hot-band annealing treatment is also advantageous as it can maximize the evolution of beneficial gamma-fiber texture and eliminate the ridging defect in case of completely `equiaxed' starting structure. Such treatment reduces the severity of ridging even if the initial structure contains typically mixed `columnar-equiaxed' grains.

The lateral In2O3 nanowires and pyramid networks manipulation by controlled substrate surface energy in annealing evolution

NASA Astrophysics Data System (ADS)

Shariati, Mohsen; Darjani, Mojtaba

2016-02-01

The continuous laterally aligned growth of In2O3 nanocrystal networks extended with nanowire and pyramid connections under annealing influence has been reported. These nanostructures have been grown on Si substrate by using oxygen-assisted annealing process through PVD growth technique. The formation of In2O3 nanocrystals has been achieved by the successive growth of critical self-nucleated condensation in three orientations. The preferred direction was the route between two pyramids especially in the smallest surface energy. The effects of substrate temperature in annealing process on the morphological properties of the as-grown nanostructures were investigated. The annealing technique showed that by controlling the surface energy, the morphology of structures was changed from unregulated array to defined nanostructures; especially nanowires 50 nm in width. The obtained nanostructures also were investigated by the (transmission electron microscopy) TEM, Raman spectrum and the (X-ray diffraction) XRD patterns. They indicated that the self-assembled In2O3 nanocrystal networks have been fabricated by the vapor-solid (VS) growth mechanism. The growth mechanism process was prompted to attribute the relationship among the kinetics parameters, surface diffusion and morphology of nanostructures.

Growth and evolution of nickel germanide nanostructures on Ge(001).

PubMed

Grzela, T; Capellini, G; Koczorowski, W; Schubert, M A; Czajka, R; Curson, N J; Heidmann, I; Schmidt, Th; Falta, J; Schroeder, T

2015-09-25

Nickel germanide is deemed an excellent material system for low resistance contact formation for future Ge device modules integrated into mainstream, Si-based integrated circuit technologies. In this study, we present a multi-technique experimental study on the formation processes of nickel germanides on Ge(001). We demonstrate that room temperature deposition of ∼1 nm of Ni on Ge(001) is realized in the Volmer-Weber growth mode. Subsequent thermal annealing results first in the formation of a continuous NixGey wetting layer featuring well-defined terrace morphology. Upon increasing the annealing temperature to 300 °C, we observed the onset of a de-wetting process, characterized by the appearance of voids on the NixGey terraces. Annealing above 300 °C enhances this de-wetting process and the surface evolves gradually towards the formation of well-ordered, rectangular NixGey 3D nanostructures. Annealing up to 500 °C induces an Ostwald ripening phenomenon, with smaller nanoislands disappearing and larger ones increasing their size. Subsequent annealing to higher temperatures drives the Ni-germanide diffusion into the bulk and the consequent formation of highly ordered, {111} faceted Ni-Ge nanocrystals featuring an epitaxial relationship with the substrate Ni-Ge (101); (010) || Ge(001); (110).

Deformation and annealing study of Nicraly

NASA Technical Reports Server (NTRS)

Trela, D. M.; Ebert, L. J.

1975-01-01

Extensive experiments were carried out on the ODS alloy Nicraly, (an alloy prepared by mechanical alloying and consolidating a powder blend consisting of 16% chromium, 4% aluminum, 2-3% yttria, balance nickel), in efforts to develop methods of controlling the grain size and grain shape of the material. The experiments fell into two general categories: variations in the annealing parameters using the as-extruded material as it was received, and various thermomechanical processing schedules (various combinations of cold work and annealing). Success was achieved in gaining grain size and grain shape control by annealing of the as-extruded material. By proper selection of annealing temperature and cooling rates, the grain size of the as-received material was increased almost two orders of magnitude (from an average grain dimension of 0.023 mm to 1.668 mm) while the aspect ratio was increased by some 50% (from 20:1 to 30:1). No success was achieved in gaining significant control of the grain size and shape of the material by thermo-mechanical processing.

Direct Immersion Annealing of Thin Block Copolymer Films.

PubMed

Modi, Arvind; Bhaway, Sarang M; Vogt, Bryan D; Douglas, Jack F; Al-Enizi, Abdullah; Elzatahry, Ahmed; Sharma, Ashutosh; Karim, Alamgir

2015-10-07

We demonstrate ordering of thin block copolymer (BCP) films via direct immersion annealing (DIA) at enhanced rate leading to stable morphologies. The BCP films are immersed in carefully selected mixtures of good and marginal solvents that can impart enhanced polymer mobility, while inhibiting film dissolution. DIA is compatible with roll-to-roll assembly manufacturing and has distinct advantages over conventional thermal annealing and batch processing solvent-vapor annealing methods. We identify three solvent composition-dependent BCP film ordering regimes in DIA for the weakly interacting polystyrene-poly(methyl methacrylate) (PS-PMMA) system: rapid short-range order, optimal long-range order, and a film instability regime. Kinetic studies in the "optimal long-range order" processing regime as a function of temperature indicate a significant reduction of activation energy for BCP grain growth compared to oven annealing at conventional temperatures. An attractive feature of DIA is its robustness to ordering other BCP (e.g. PS-P2VP) and PS-PMMA systems exhibiting spherical, lamellar and cylindrical ordering.

The effect of annealing temperature on the properties of powder metallurgy processed Ti-35Nb-2Zr-0.5O alloy.

PubMed

Málek, Jaroslav; Hnilica, František; Veselý, Jaroslav; Smola, Bohumil; Medlín, Rostislav

2017-11-01

Ti-35Nb-2Zr-0.5O (wt%) alloy was prepared via a powder metallurgy process (cold isostatic pressing of blended elemental powders and subsequent sintering) with the primary aim of using it as a material for bio-applications. Sintered specimens were swaged and subsequently the influence of annealing temperature on the mechanical and structural properties was studied. Specimens were annealed at 800, 850, 900, 950, and 1000°C for 0.5h and water quenched. Significant changes in microstructure (i.e. precipitate dissolution or grain coarsening) were observed in relation to increasing annealing temperature. In correlation with those changes, the mechanical properties were also studied. The ultimate tensile strength increased from 925MPa (specimen annealed at 800°C) to 990MPa (900°C). Also the elongation increased from ~ 13% (800°C) to more than 20% (900, 950, and 1000°C). Copyright © 2017 Elsevier Ltd. All rights reserved.

The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

DOE PAGES

Wallace, J. B.; Aji, L. B. Bayu; Martin, A. A.; ...

2017-01-06

The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from -20 to 140 °C with 500 keV Ar ions. Results reveal a defect relaxation time constant of ~10–0.2 ms, which decreases monotonically with increasing temperature. The dynamic annealing rate shows an Arrhenius dependence with two well-defined activation energies of 73 ± 5 meV andmore » 420 ± 10 meV, below and above 60 °C, respectively. Rate theory modeling, bench-marked against this data, suggests a crucial role of both vacancy and interstitial diffusion, with the dynamic annealing rate limited by the migration and interaction of vacancies.« less

The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wallace, J. B.; Aji, L. B. Bayu; Martin, A. A.

The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from -20 to 140 °C with 500 keV Ar ions. Results reveal a defect relaxation time constant of ~10–0.2 ms, which decreases monotonically with increasing temperature. The dynamic annealing rate shows an Arrhenius dependence with two well-defined activation energies of 73 ± 5 meV andmore » 420 ± 10 meV, below and above 60 °C, respectively. Rate theory modeling, bench-marked against this data, suggests a crucial role of both vacancy and interstitial diffusion, with the dynamic annealing rate limited by the migration and interaction of vacancies.« less

Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing

NASA Astrophysics Data System (ADS)

Yuan, Zhishan; Wang, Chengyong; Chen, Ke; Ni, Zhonghua; Chen, Yunfei

2017-08-01

In this paper, amorphous silicon nanowires (α-SiNWs) were synthesized on (100) Si substrate with silicon oxide film by Cu catalyst-driven solid-liquid-solid mechanism (SLS) during annealing process (1080 °C for 30 min under Ar/H2 atmosphere). Micro size Cu pattern fabrication decided whether α-SiNWs can grow or not. Meanwhile, those micro size Cu patterns also controlled the position and density of wires. During the annealing process, Cu pattern reacted with SiO2 to form Cu silicide. More important, a diffusion channel was opened for Si atoms to synthesis α-SiNWs. What is more, the size of α-SiNWs was simply controlled by the annealing time. The length of wire was increased with annealing time. However, the diameter showed the opposite tendency. The room temperature resistivity of the nanowire was about 2.1 × 103 Ω·cm (84 nm diameter and 21 μm length). This simple fabrication method makes application of α-SiNWs become possible.

The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

NASA Astrophysics Data System (ADS)

Wallace, J. B.; Aji, L. B. Bayu; Martin, A. A.; Shin, S. J.; Shao, L.; Kucheyev, S. O.

2017-01-01

The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from -20 to 140 °C with 500 keV Ar ions. Results reveal a defect relaxation time constant of ~10-0.2 ms, which decreases monotonically with increasing temperature. The dynamic annealing rate shows an Arrhenius dependence with two well-defined activation energies of 73 ± 5 meV and 420 ± 10 meV, below and above 60 °C, respectively. Rate theory modeling, bench-marked against this data, suggests a crucial role of both vacancy and interstitial diffusion, with the dynamic annealing rate limited by the migration and interaction of vacancies.

Direct Immersion Annealing of Thin Block Copolymer Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Modi, Arvind; Bhaway, Sarang M.; Vogt, Bryan D.

2015-09-09

We demonstrate ordering of thin block copolymer (BCP) films via direct immersion annealing (DIA) at enhanced rate leading to stable morphologies. The BCP films are immersed in carefully selected mixtures of good and marginal solvents that can impart enhanced polymer mobility, while inhibiting film dissolution. DIA is compatible with roll-to-roll assembly manufacturing and has distinct advantages over conventional thermal annealing and batch processing solvent-vapor annealing methods. We identify three solvent composition-dependent BCP film ordering regimes in DIA for the weakly interacting polystyrene–poly(methyl methacrylate) (PS–PMMA) system: rapid short-range order, optimal long-range order, and a film instability regime. Kinetic studies in themore » “optimal long-range order” processing regime as a function of temperature indicate a significant reduction of activation energy for BCP grain growth compared to oven annealing at conventional temperatures. An attractive feature of DIA is its robustness to ordering other BCP (e.g. PS-P2VP) and PS-PMMA systems exhibiting spherical, lamellar and cylindrical ordering.« less

Experiences with serial and parallel algorithms for channel routing using simulated annealing

NASA Technical Reports Server (NTRS)

Brouwer, Randall Jay

1988-01-01

Two algorithms for channel routing using simulated annealing are presented. Simulated annealing is an optimization methodology which allows the solution process to back up out of local minima that may be encountered by inappropriate selections. By properly controlling the annealing process, it is very likely that the optimal solution to an NP-complete problem such as channel routing may be found. The algorithm presented proposes very relaxed restrictions on the types of allowable transformations, including overlapping nets. By freeing that restriction and controlling overlap situations with an appropriate cost function, the algorithm becomes very flexible and can be applied to many extensions of channel routing. The selection of the transformation utilizes a number of heuristics, still retaining the pseudorandom nature of simulated annealing. The algorithm was implemented as a serial program for a workstation, and a parallel program designed for a hypercube computer. The details of the serial implementation are presented, including many of the heuristics used and some of the resulting solutions.

Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing.

PubMed

Ye, Chao; Ran, Guang; Zhou, Wei; Shen, Qiang; Feng, Qijie; Lin, Jianxin

2017-10-25

Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Ion irradiation induced SiC amorphization, but the surface was smooth and did not have special structures. During the annealing process, the amorphous SiC was recrystallized to form columnar crystals that had a large amount of twin structures. The longer the annealing time was, the greater the amount of recrystallized SiC would be. The recrystallization volume fraction was accorded with the law of the Johnson-Mehl-Avrami equation. The surface morphology consisted of tiny pieces with an average width of approximately 30 nm in the annealed SiC. The volume shrinkage of irradiated SiC layer and the anisotropy of newly born crystals during annealing process produced internal stress and then induced not only a large number of dislocation walls in the non-irradiated layer but also the initiation and propagation of the cracks. The direction of dislocation walls was perpendicular to the growth direction of the columnar crystal. The longer the annealing time was, the larger the length and width of the formed crack would be. A quantitative model of the crack growth was provided to calculate the length and width of the cracks at a given annealing time.

Thermally activated decomposition of (Ga,Mn)As thin layer at medium temperature post growth annealing

NASA Astrophysics Data System (ADS)

Melikhov, Y.; Konstantynov, P.; Domagala, J.; Sadowski, J.; Chernyshova, M.; Wojciechowski, T.; Syryanyy, Y.; Demchenko, I. N.

2016-05-01

The redistribution of Mn atoms in Ga1-xMnxAs layer during medium-temperature annealing, 250-450 oC, by Mn K-edge X-ray absorption fine structure (XAFS) recorded at ALBA facility, was studied. For this purpose Ga1-xMnxAs thin layer with x=0.01 was grown on AlAs buffer layer deposited on GaAs(100) substrate by molecular beam epitaxy (MBE) followed by annealing. The examined layer was detached from the substrate using a “lift-off” procedure in order to eliminate elastic scattering in XAFS spectra. Fourier transform analysis of experimentally obtained EXAFS spectra allowed to propose a model which describes a redistribution/diffusion of Mn atoms in the host matrix. Theoretical XANES spectra, simulated using multiple scattering formalism (FEFF code) with the support of density functional theory (WIEN2k code), qualitatively describe the features observed in the experimental fine structure.