Microfabricated thermoelectric power-generation devices

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Ryan, Margaret A. (Inventor); Borshchevsky, Alex (Inventor); Phillips, Wayne (Inventor); Kolawa, Elizabeth A. (Inventor); Snyder, G. Jeffrey (Inventor); Caillat, Thierry (Inventor); Kascich, Thorsten (Inventor); Mueller, Peter (Inventor)

2004-01-01

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

Architectured Materials to Improve the Reliability of Power Electronics Modules: Substrate and Lead-Free Solder

NASA Astrophysics Data System (ADS)

Kaabi, Abderrahmen; Bienvenu, Yves; Ryckelynck, David; Pierre, Bertrand

2014-03-01

Power electronics modules (>100 A, >500 V) are essential components for the development of electrical and hybrid vehicles. These modules are formed from silicon chips (transistors and diodes) assembled on copper substrates by soldering. Owing to the fact that the assembly is heterogeneous, and because of thermal gradients, shear stresses are generated in the solders and cause premature damage to such electronics modules. This work focuses on architectured materials for the substrate and on lead-free solders to reduce the mechanical effects of differential expansion, improve the reliability of the assembly, and achieve a suitable operating temperature (<175°C). These materials are composites whose thermomechanical properties have been optimized by numerical simulation and validated experimentally. The substrates have good thermal conductivity (>280 W m-1 K-1) and a macroscopic coefficient of thermal expansion intermediate between those of Cu and Si, as well as limited structural evolution in service conditions. An approach combining design, optimization, and manufacturing of new materials has been followed in this study, leading to improved thermal cycling behavior of the component.

The Influence of Chitosan Substrate and Its Nanometric Form Toward the Green Power Generation in Sediment Microbial Fuel Cell.

PubMed

Karthikeyan, C; Sathishkumar, Y; Lee, Yang Soo; Kim, Ae Rhan; Yoo, Dong Jin; Kumar, G Gnana

2017-01-01

A simple, environmental friendly and biologically important sediment interfaced fuel cell was developed for the green energy generation. The soil sediment used for the study is enriched of rich anthropogenic free organic carbon, sufficient manganese and high level potassium contents as evidenced from the geochemical characterizations. The saccharides produced by the catalytic reaction of substrate chitosan were utilized for the growth of microorganisms and electron shuttling processes. Chitosan substrate influenced sediment microbial fuel cells exhibited the nearly two fold power increment over the substrate free fuel cells. The fuel cell efficiencies were further increased by bringing the substrate chitosan at nanometric level, which is nearly three and two fold higher than that of substrate free and chitosan influenced sediment microbial fuel cells, respectively, and the influential parameters involved in the power and longevity issues were addressed with different perspectives.

Swelling and Contraction of Corn Mitochondria 1

PubMed Central

Stoner, C. D.; Hanson, J. B.

1966-01-01

A survey has been made of the properties of corn mitochondria in swelling and contraction. The mitochondria swell spontaneously in KCl but not in sucrose. Aged mitochondria will swell rapidly in sucrose if treated with citrate or EDTA. Swelling does not impair oxidative phosphorylation if bovine serum albumin is present. Contraction can be maintained or initiated with ATP + Mg or an oxidizable substrate, contraction being more rapid with the substrate. Magnesium is not required for substrate powered contraction. Contraction powered by ATP is accompanied by the release of phosphate. Oligomycin inhibits both ATP-powered contraction and the release of phosphate. However, it does not affect substrate-powered contraction. Substrate powered contraction is inhibited by electron-transport inhibitors. The uncoupler, carbonyl cyanide m-chlorophenyl hydrazone, accelerates swelling and inhibits both ATP-and substrate-powered contraction. However, the concentrations required are well in excess of those required to produce uncoupling and to accelerate adenosine triphosphatase; the concentrations required inhibit respiration in a phosphorylating medium. Phosphate is a very effective inhibitor of succinate-powered contraction. Neither oligomycin nor Mg affects the phosphate inhibition. Phosphate is less inhibitory with the ATP-powered contraction. The results are discussed in terms of a hypothesis that contraction is associated with a nonphosphorylated high energy intermediate of oxidative phosphorylation. Images PMID:16656248

Very High Efficiency, Miniaturized, Long-Lived Alpha Particle Power Source Using Diamond Devices for Extreme Space Environments

NASA Technical Reports Server (NTRS)

Kolawa, Elizabeth A. (Inventor); Patel, Jagdishbhai U. (Inventor); Fleurial, Jean-Pierre (Inventor)

2004-01-01

A power source that converts a-particle energy into electricity by coulomb collision in doped diamond films is described. Alpha particle decay from curium-244 creates electron-hole pairs by free- ing electrons and holes inside the crystal lattice in N- and P-doped diamond films. Ohmic contacts provide electrical connection to an electronic device. Due to the built-in electric field at the rectifying junction across the hT- and P-doped diamond films, the free electrons are constrained to traveling in generally one direction. This one direction then supplies electrons in a manner similar to that of a battery. The radioactive curium layer may be disposed on diamond films for even distribution of a-particle radiation. The resulting power source may be mounted on a diamond substrate that serves to insulate structures below the diamond substrate from a-particle emission. Additional insulation or isolation may be provided in order to prevent damage from a-particle collision. N-doped silicon may be used instead of N-doped diamond.

High-efficiency robust perovskite solar cells on ultrathin flexible substrates

PubMed Central

Li, Yaowen; Meng, Lei; Yang, Yang (Michael); Xu, Guiying; Hong, Ziruo; Chen, Qi; You, Jingbi; Li, Gang; Yang, Yang; Li, Yongfang

2016-01-01

Wide applications of personal consumer electronics have triggered tremendous need for portable power sources featuring light-weight and mechanical flexibility. Perovskite solar cells offer a compelling combination of low-cost and high device performance. Here we demonstrate high-performance planar heterojunction perovskite solar cells constructed on highly flexible and ultrathin silver-mesh/conducting polymer substrates. The device performance is comparable to that of their counterparts on rigid glass/indium tin oxide substrates, reaching a power conversion efficiency of 14.0%, while the specific power (the ratio of power to device weight) reaches 1.96 kW kg−1, given the fact that the device is constructed on a 57-μm-thick polyethylene terephthalate based substrate. The flexible device also demonstrates excellent robustness against mechanical deformation, retaining >95% of its original efficiency after 5,000 times fully bending. Our results confirmed that perovskite thin films are fully compatible with our flexible substrates, and are thus promising for future applications in flexible and bendable solar cells. PMID:26750664

An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

NASA Astrophysics Data System (ADS)

Shealy, J. R.; Kaper, V.; Tilak, V.; Prunty, T.; Smart, J. A.; Green, B.; Eastman, L. F.

2002-04-01

The AlGaN/GaN high-electron-mobility transistor requires a thermally conducting, semi-insulating substrate to achieve the best possible microwave performance. The semi-insulating SiC substrate is currently the best choice for this device technology; however, fringing fields which penetrate the GaN buffer layer at pinch-off introduce significant substrate conduction at modest drain bias if channel electrons are not well confined to the nitride structure. The addition of an insulating AlN sub-buffer on the semi-insulating SiC substrate suppresses this parasitic conduction, which results in dramatic improvements in the AlGaN/GaN transistor performance. A pronounced reduction in both the gate-lag and the gate-leakage current are observed for structures with the AlN sub-buffer layer. These structures operate up to 50 V drain bias under drive, corresponding to a peak voltage of 80 V, for a 0.30 µm gate length device. The devices have achieved high-efficiency operation at 10 GHz (>70% power-added efficiency in class AB mode at 15 V drain bias) and the highest output power density observed thus far (11.2 W mm-1). Large-periphery devices (1.5 mm gate width) deliver 10 W (continuous wave) of maximum saturated output power at 10 GHz. The growth, processing, and performance of these devices are briefly reviewed.

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

NASA Technical Reports Server (NTRS)

Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

2004-01-01

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

High power RF window deposition apparatus, method, and device

DOEpatents

Ives, Lawrence R.; Lucovsky, Gerald; Zeller, Daniel

2017-07-04

A process for forming a coating for an RF window which has improved secondary electron emission and reduced multipactor for high power RF waveguides is formed from a substrate with low loss tangent and desirable mechanical characteristics. The substrate has an RPAO deposition layer applied which oxygenates the surface of the substrate to remove carbon impurities, thereafter has an RPAN deposition layer applied to nitrogen activate the surface of the substrate, after which a TiN deposition layer is applied using Titanium tert-butoxide. The TiN deposition layer is capped with a final RPAN deposition layer of nitridation to reduce the bound oxygen in the TiN deposition layer. The resulting RF window has greatly improved titanium layer adhesion, reduced multipactor, and is able to withstand greater RF power levels than provided by the prior art.

Geometrical and morphological optimizations of plasmonic nanoarrays for high-performance SERS detection

NASA Astrophysics Data System (ADS)

Li, W. Q.; Wang, G.; Zhang, X. N.; Geng, H. P.; Shen, J. L.; Wang, L. S.; Zhao, J.; Xu, L. F.; Zhang, L. J.; Wu, Y. Q.; Tai, R. Z.; Chen, G.

2015-09-01

Here we present an in-depth and comprehensive study of the effect of the geometry and morphology of nanoarray (NA) substrates on their surface-enhanced Raman scattering (SERS) performance. The high-quality SERS-active NA substrates of various unit shapes and pitches are assembled through electron beam lithography and fabricated by electron beam physical vapor deposition. Good agreement is found on comparing the Raman scattering results with the integrals of the fourth power of local electric fields from the three-dimensional numerical simulations. A novel type of hybrid NA substrate composed of disordered nanoparticles and a periodic NA is fabricated and characterized. The morphology of NAs has little influence on the SERS performance of hybrid NA substrates and they perform better than both their counterparts pure NA and disordered nanoparticle substrates.

Geometrical and morphological optimizations of plasmonic nanoarrays for high-performance SERS detection.

PubMed

Li, W Q; Wang, G; Zhang, X N; Geng, H P; Shen, J L; Wang, L S; Zhao, J; Xu, L F; Zhang, L J; Wu, Y Q; Tai, R Z; Chen, G

2015-10-07

Here we present an in-depth and comprehensive study of the effect of the geometry and morphology of nanoarray (NA) substrates on their surface-enhanced Raman scattering (SERS) performance. The high-quality SERS-active NA substrates of various unit shapes and pitches are assembled through electron beam lithography and fabricated by electron beam physical vapor deposition. Good agreement is found on comparing the Raman scattering results with the integrals of the fourth power of local electric fields from the three-dimensional numerical simulations. A novel type of hybrid NA substrate composed of disordered nanoparticles and a periodic NA is fabricated and characterized. The morphology of NAs has little influence on the SERS performance of hybrid NA substrates and they perform better than both their counterparts pure NA and disordered nanoparticle substrates.

Maltodextrin-powered enzymatic fuel cell through a non-natural enzymatic pathway

NASA Astrophysics Data System (ADS)

Zhu, Zhiguang; Wang, Yiran; Minteer, Shelley D.; Percival Zhang, Y.-H.

Enzymatic fuel cells (EFCs) use a variety of fuels to generate electricity through oxidoreductase enzymes, such as oxidases or dehydrogenases, as catalysts on electrodes. We have developed a novel synthetic enzymatic pathway containing two free enzymes (maltodextrin phosphorylase and phosphoglucomutase) and one immobilized glucose-6-phosphate dehydrogenase that can utilize an oligomeric substrate maltodextrin for producing electrons mediated via a diaphorase and vitamin K 3 electron shuttle system. Three different enzyme immobilization approaches were compared based on electrostatic force entrapment, chemical cross-linking, and cross-linking with the aid of carbon nanotubes. At 10 mM glucose-6-phosphate (G6P) as a substrate concentration, the maximum power density of 0.06 mW cm -2 and retaining 42% of power output after 11 days were obtained through the method of chemical cross-linking with carbon nanotubes, approximately 6-fold and 3.5-fold better than those of the electrostatic force-based method, respectively. When changed to maltodextrin (degree of polymerization = 19) as the substrate, the EFC achieved a maximum power density of 0.085 mW cm -2. With the advantages of stable, low cost, high energy density, non-inhibitor to enzymes, and environmental friendly, maltodextrin is suggested to be an ideal fuel to power enzymatic fuel cells.

Microfluidic stretchable RF electronics.

PubMed

Cheng, Shi; Wu, Zhigang

2010-12-07

Stretchable electronics is a revolutionary technology that will potentially create a world of radically different electronic devices and systems that open up an entirely new spectrum of possibilities. This article proposes a microfluidic based solution for stretchable radio frequency (RF) electronics, using hybrid integration of active circuits assembled on flex foils and liquid alloy passive structures embedded in elastic substrates, e.g. polydimethylsiloxane (PDMS). This concept was employed to implement a 900 MHz stretchable RF radiation sensor, consisting of a large area elastic antenna and a cluster of conventional rigid components for RF power detection. The integrated radiation sensor except the power supply was fully embedded in a thin elastomeric substrate. Good electrical performance of the standalone stretchable antenna as well as the RF power detection sub-module was verified by experiments. The sensor successfully detected the RF radiation over 5 m distance in the system demonstration. Experiments on two-dimensional (2D) stretching up to 15%, folding and twisting of the demonstrated sensor were also carried out. Despite the integrated device was severely deformed, no failure in RF radiation sensing was observed in the tests. This technique illuminates a promising route of realizing stretchable and foldable large area integrated RF electronics that are of great interest to a variety of applications like wearable computing, health monitoring, medical diagnostics, and curvilinear electronics.

Transparent and flexible heaters based on Al:ZnO degenerate semiconductor

NASA Astrophysics Data System (ADS)

Roul, Monee K.; Obasogie, Brandon; Kogo, Gilbert; Skuza, J. R.; Mundle, R. M.; Pradhan, A. K.

2017-10-01

We report on high performance transparent Al:ZnO (AZO) thin film heaters on flexible polymer (polyethylene terephthalate) and glass substrates which demonstrate low sheet resistivity. AZO thin films were grown by radio-frequency magnetron sputtering at low Ts (below 200 °C) on flexible, transparent polyethylene terephthalate substrates that show stable and reproducible results by applying low (<10 V) voltages. This study also examined identical AZO thin films on glass substrates that showed highly reproducible heating effects due to the Joule heating effect. The potential applications are foldable and wearable electronics, pain/injury therapy smart windows, automobile window defrosters, and low-cost power electronics.

Power Electronics Thermal Management R&D (Presentation)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waye, S.

2014-11-01

This project will investigate and develop thermal-management strategies for wide bandgap (WBG)-based power electronics systems. Research will be carried out to deal with thermal aspects at the module- and system-level. Module-level research will focus on die- and substrate-integrated cooling strategies and heat-transfer enhancement technologies. System-level research will focus on thermal-management strategies for the entire power electronics system to enable smart packaging solutions. One challenge with WBG device-based power electronics is that although losses in the form of heat may be lower, the footprint of the components is also likely to be reduced to reduce cost, weight, and volume. Combined withmore » higher operational temperatures, this creates higher heat fluxes which much be removed from a smaller footprint, requiring advanced cooling strategies.« less

Fabrication of Si3N4 thin films on phynox alloy substrates for electronic applications

NASA Astrophysics Data System (ADS)

Shankernath, V.; Naidu, K. Lakshun; Krishna, M. Ghanashyam; Padmanabhan, K. A.

2018-04-01

Thin films of Si3N4 are deposited on Phynox alloy substrates using radio frequency magnetron sputtering. The thickness of the films was varied between 80-150 nm by increasing the duration of deposition from 1 to 3 h at a fixed power density and working pressure. X-ray diffraction patterns reveal that the Si3N4 films had crystallized inspite of the substrates not being heated during deposition. This was confirmed using selected area electron diffraction and high resolution transmission electron microscopy also. It is postulated that a low lattice misfit between Si3N4 and Phynox provides energetically favourable conditions for ambient temperature crystallization. The hardness of the films is of the order of 6 to 9 GPa.

Cathodoluminescent characteristics and light technical parameters of thin-film screens based on oxides and oxysulfides of rare-earth elements

NASA Astrophysics Data System (ADS)

Bondar, Vyacheslav D.; Grytsiv, Myroslav; Groodzinsky, Arkady; Vasyliv, Mykhailo

1995-11-01

Results on creation of thin-film single-crystal high-resolution screens with energy control of luminescence color are presented. In order to create phosphor films ion-plasma technology for deposition of yttrium and lanthanum oxides and oxysulfides activated by rare earth elements has been developed. The screen consists of phosphor film on phosphor substrate with different colors of luminescence (e.g. Y2O3-Eu film with red color on Y3Al5O12- Tb, Ce substrate with green color of luminescence). Electron irradiation causes luminescence with color that depends on energy of the electron beam. The physical reason for color change is that electron beam energy defines electron penetration depth. If the energy is weak, only the film is excited. More powerful beam penetrates into the substrate and thus changes the color of luminescence.

Composite electrode/electrolyte structure

DOEpatents

Visco, Steven J.; Jacobson, Craig P.; DeJonghe, Lutgard C.

2004-01-27

Provided is an electrode fabricated from highly electronically conductive materials such as metals, metal alloys, or electronically conductive ceramics. The electronic conductivity of the electrode substrate is maximized. Onto this electrode in the green state, a green ionic (e.g., electrolyte) film is deposited and the assembly is co-fired at a temperature suitable to fully densify the film while the substrate retains porosity. Subsequently, a catalytic material is added to the electrode structure by infiltration of a metal salt and subsequent low temperature firing. The invention allows for an electrode with high electronic conductivity and sufficient catalytic activity to achieve high power density in ionic (electrochemical) devices such as fuel cells and electrolytic gas separation systems.

Slow domain reconfiguration causes power-law kinetics in a two-state enzyme.

PubMed

Grossman-Haham, Iris; Rosenblum, Gabriel; Namani, Trishool; Hofmann, Hagen

2018-01-16

Protein dynamics are typically captured well by rate equations that predict exponential decays for two-state reactions. Here, we describe a remarkable exception. The electron-transfer enzyme quiescin sulfhydryl oxidase (QSOX), a natural fusion of two functionally distinct domains, switches between open- and closed-domain arrangements with apparent power-law kinetics. Using single-molecule FRET experiments on time scales from nanoseconds to milliseconds, we show that the unusual open-close kinetics results from slow sampling of an ensemble of disordered domain orientations. While substrate accelerates the kinetics, thus suggesting a substrate-induced switch to an alternative free energy landscape of the enzyme, the power-law behavior is also preserved upon electron load. Our results show that the slow sampling of open conformers is caused by a variety of interdomain interactions that imply a rugged free energy landscape, thus providing a generic mechanism for dynamic disorder in multidomain enzymes.

Wearable Large-Scale Perovskite Solar-Power Source via Nanocellular Scaffold.

PubMed

Hu, Xiaotian; Huang, Zengqi; Zhou, Xue; Li, Pengwei; Wang, Yang; Huang, Zhandong; Su, Meng; Ren, Wanjie; Li, Fengyu; Li, Mingzhu; Chen, Yiwang; Song, Yanlin

2017-11-01

Dramatic advances in perovskite solar cells (PSCs) and the blossoming of wearable electronics have triggered tremendous demands for flexible solar-power sources. However, the fracturing of functional crystalline films and transmittance wastage from flexible substrates are critical challenges to approaching the high-performance PSCs with flexural endurance. In this work, a nanocellular scaffold is introduced to architect a mechanics buffer layer and optics resonant cavity. The nanocellular scaffold releases mechanical stresses during flexural experiences and significantly improves the crystalline quality of the perovskite films. The nanocellular optics resonant cavity optimizes light harvesting and charge transportation of devices. More importantly, these flexible PSCs, which demonstrate excellent performance and mechanical stability, are practically fabricated in modules as a wearable solar-power source. A power conversion efficiency of 12.32% for a flexible large-scale device (polyethylene terephthalate substrate, indium tin oxide-free, 1.01 cm 2 ) is achieved. This ingenious flexible structure will enable a new approach for development of wearable electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High mobility La-doped BaSnO3 on non-perovskite MgO substrate

NASA Astrophysics Data System (ADS)

Kim, Youjung; Shin, Juyeon; Kim, Young Mo; Char, Kookrin

(Ba,La)SnO3 is a transparent perovskite oxide with high electron mobility and excellent oxygen stability. Field effect device with (Ba,La)SnO3 channel was reported to show good output characteristics on STO substrate. Here, we fabricated (Ba,La)SnO3\\ films and field effect devices with (Ba,La)SnO3 channel on non-perovskite MgO substrates, which are available in large size wafers. X-ray diffraction and transmission electron microscope (TEM) images of (Ba,La)SnO3\\ films on MgO substrates show that the films are epitaxial with many threading dislocations. (Ba,La)SnO3 exhibits the high mobility with 97.2 cm2/Vs at 2 % La doping on top of 150 nm thick BaSnO3 buffer layer. Excellent carrier modulation was observed in field effect devices. FET performances on MgO substrates are slightly better than those on SrTiO3 substrates in spite of the higher dislocation density on MgO than on SrTiO3 substrates. These high mobility BaSnO3 thin films and transistors on MgO substrates will accelerate development for applications in high temperature and high power electronics. Samsung Science and Technology Foundation.

CarbAl Heat Transfer Material

NASA Technical Reports Server (NTRS)

Fink, Richard

2015-01-01

The increasing use of power electronics, such as high-current semiconductor devices and modules, within space vehicles is driving the need to develop specialty thermal management materials in both the packaging of these discrete devices and the packaging of modules consisting of these device arrays. Developed by Applied Nanotech, Inc. (ANI), CarbAl heat transfer material is uniquely characterized by its low density, high thermal diffusivity, and high thermal conductivity. Its coefficient of thermal expansion (CTE) is similar to most power electronic materials, making it an effective base plate substrate for state-of-the-art silicon carbide (SiC) super junction transistors. The material currently is being used to optimize hybrid vehicle inverter packaging. Adapting CarbAl-based substrates to space applications was a major focus of the SBIR project work. In Phase I, ANI completed modeling and experimentation to validate its deployment in a space environment. Key parameters related to cryogenic temperature scaling of CTE, thermal conductivity, and mechanical strength. In Phase II, the company concentrated on improving heat sinks and thermally conductive circuit boards for power electronic applications.

Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

DOEpatents

Sherohman, John W [Livermore, CA; Coombs, III, Arthur W.; Yee, Jick Hong [Livermore, CA; Wu, Kuang Jen J [Cupertino, CA

2007-05-29

For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

Next Generation Ceramic Substrate Fabricated at Room Temperature.

PubMed

Kim, Yuna; Ahn, Cheol-Woo; Choi, Jong-Jin; Ryu, Jungho; Kim, Jong-Woo; Yoon, Woon-Ha; Park, Dong-Soo; Yoon, Seog-Young; Ma, Byungjin; Hahn, Byung-Dong

2017-07-26

A ceramic substrate must not only have an excellent thermal performance but also be thin, since the electronic devices have to become thin and small in the electronics industry of the next generation. In this manuscript, a thin ceramic substrate (thickness: 30-70 µm) is reported for the next generation ceramic substrate. It is fabricated by a new process [granule spray in vacuum (GSV)] which is a room temperature process. For the thin ceramic substrates, AlN GSV films are deposited on Al substrates and their electric/thermal properties are compared to those of the commercial ceramic substrates. The thermal resistance is significantly reduced by using AlN GSV films instead of AlN bulk-ceramics in thermal management systems. It is due to the removal of a thermal interface material which has low thermal conductivity. In particular, the dielectric strengths of AlN GSV films are much higher than those of AlN bulk-ceramics which are commercialized, approximately 5 times. Therefore, it can be expected that this GSV film is a next generation substrate in thermal management systems for the high power application.

Electron emission from diamond films seeded using kitchen-wrap polyethylene

NASA Astrophysics Data System (ADS)

Varshney, D.; Makarov, V. I.; Saxena, P.; Guinel, M. J. F.; Kumar, A.; Scott, J. F.; Weiner, B. R.; Morell, G.

2011-03-01

Diamond has many potential electronic applications, but the diamond seeding methods are generally harsh on the substrates rendering them unsuitable for integration in electronics. We report a non-abrasive, scalable and economic process of diamond film seeding using kitchen-wrap polyethylene employing hot filament chemical vapour reaction of H2S/CH4/H2 gas mixtures on Cu substrates. The fabricated diamond films were characterized with scanning electron microscopy, transmission electron microscopy and Raman spectroscopy, which confirm that the deposited film consists of a microcrystalline diamond of size in the range 0.5-1.0 µm. The synthesized diamond films exhibit a turn-on field of about 8.5 V µm-1 and long-term stability. Diamond film synthesis using polyethylene will enable the integration of diamond heat sinks into high-power and high-temperature electronic devices.

A simple microbial fuel cell model for improvement of biomedical device powering times.

PubMed

Roxby, Daniel N; Tran, Nham; Nguyen, Hung T

2014-01-01

This study describes a Matlab based Microbial Fuel Cell (MFC) model for a suspended microbial population, in the anode chamber for the use of the MFC in powering biomedical devices. The model contains three main sections including microbial growth, microbial chemical uptake and secretion and electrochemical modeling. The microbial growth portion is based on a Continuously Stirred Tank Reactor (CSTR) model for the microbial growth with substrate and electron acceptors. Microbial stoichiometry is used to determine chemical concentrations and their rates of change and transfer within the MFC. These parameters are then used in the electrochemical modeling for calculating current, voltage and power. The model was tested for typically exhibited MFC characteristics including increased electrode distances and surface areas, overpotentials and operating temperatures. Implantable biomedical devices require long term powering which is the main objective for MFCs. Towards this end, our model was tested with different initial substrate and electron acceptor concentrations, revealing a four-fold increase in concentrations decreased the power output time by 50%. Additionally, the model also predicts that for a 35.7% decrease in specific growth rate, a 50% increase in power longevity is possible.

A Study on the Formation of 2-Dimensional Tungsten Disulfide Thin Films on Sapphire Substrate by Sputtering and High Temperature Rapid Thermal Processing.

PubMed

Nam, Hanyeob; Kim, Hong-Seok; Han, Jae-Hee; Kwon, Sang Jik; Cho, Eou Sik

2018-09-01

As direct formation of p-type two-dimensional transition metal dichalcogenides (TMDC) films on substrates, tungsten disulfide (WS2) thin films were deposited onto sapphire glass substrate through shadow mask patterns by radio-frequency (RF) sputtering at different sputtering powers ranging from 60 W to 150 W and annealed by rapid thermal processing (RTP) at various high temperatures ranging from 500 °C to 800 °C. Based on scanning electron microscope (SEM) images and Raman spectra, better surface roughness and mode dominant E12g and A1g peaks were found for WS2 thin films prepared at higher RF sputtering powers. It was also possible to obtain high mobilities and carrier densities for all WS2 thin films based on results of Hall measurements. Process conditions for these WS2 thin films on sapphire substrate were optimized to low RF sputtering power and high temperature annealing.

Characterization of a novel strain phylogenetically related to Kocuria rhizophila and its chemical modification to improve performance of microbial fuel cells.

PubMed

Luo, Jianmei; Li, Ming; Zhou, Minghua; Hu, Youshuang

2015-07-15

It is certainly an important research area to discovery new exoelectrogens for microbial fuel cells (MFCs), and how to effectively manipulate its cell property to improve power performance is still a great challenge. In this study, a new electrochemically active bacterium phylogenetically related to Kocuria rhizophila was first isolated and found electrogenic in MFCs, which was identified through the combination methods of molecular biology, physiological, biochemical and morphological characteristics. The MFCs inoculated with this strain generated power from a wide variety of substrates, reached a maximum power density of 75mW/m(2) in the substrate of 1g/L glucose. And the electron transfer mechanism was confirmed to be dominantly direct biofilm mechanism. Chemical treatment with five reagents was verified to be a feasible strategy to improve the power density of MFCs, increasing approximately 1.75 fold at most after treated with lysozyme. This enhancement was contributed to the significant enhancement on cell permeability, cell membrane fluidity and Coenzyme Q10 (the electron carrier). Thus this work offered a novel Gram-positive electrogenic bacterium and proved chemical treatment was a feasible strategy to improve electron transfer for application in MFCs. Copyright © 2015 Elsevier B.V. All rights reserved.

Electron gun controlled smart structure

DOEpatents

Martin, Jeffrey W.; Main, John Alan; Redmond, James M.; Henson, Tammy D.; Watson, Robert D.

2001-01-01

Disclosed is a method and system for actively controlling the shape of a sheet of electroactive material; the system comprising: one or more electrodes attached to the frontside of the electroactive sheet; a charged particle generator, disposed so as to direct a beam of charged particles (e.g. electrons) onto the electrode; a conductive substrate attached to the backside of the sheet; and a power supply electrically connected to the conductive substrate; whereby the sheet changes its shape in response to an electric field created across the sheet by an accumulation of electric charge within the electrode(s), relative to a potential applied to the conductive substrate. Use of multiple electrodes distributed across on the frontside ensures a uniform distribution of the charge with a single point of e-beam incidence, thereby greatly simplifying the beam scanning algorithm and raster control electronics, and reducing the problems associated with "blooming". By placing a distribution of electrodes over the front surface of a piezoelectric film (or other electroactive material), this arrangement enables improved control over the distribution of surface electric charges (e.g. electrons) by creating uniform (and possibly different) charge distributions within each individual electrode. Removal or deposition of net electric charge can be affected by controlling the secondary electron yield through manipulation of the backside electric potential with the power supply. The system can be used for actively controlling the shape of space-based deployable optics, such as adaptive mirrors and inflatable antennae.

Hot-Electron Bolometer Mixers on Silicon-on-Insulator Substrates for Terahertz Frequencies

NASA Technical Reports Server (NTRS)

Skalare, Anders; Stern, Jeffrey; Bumble, Bruce; Maiwald, Frank

2005-01-01

A terahertz Hot-Electron Bolometer (HEB) mixer design using device substrates based on Silicon-On-Insulator (SOI) technology is described. This substrate technology allows very thin chips (6 pm) with almost arbitrary shape to be manufactured, so that they can be tightly fitted into a waveguide structure and operated at very high frequencies with only low risk for power leakages and resonance modes. The NbTiN-based bolometers are contacted by gold beam-leads, while other beamleads are used to hold the chip in place in the waveguide test fixture. The initial tests yielded an equivalent receiver noise temperature of 3460 K double-sideband at a local oscillator frequency of 1.462 THz and an intermediate frequency of 1.4 GHz.

Stretchable batteries with self-similar serpentine interconnects and integrated wireless recharging systems

NASA Astrophysics Data System (ADS)

Xu, Sheng; Zhang, Yihui; Cho, Jiung; Lee, Juhwan; Huang, Xian; Jia, Lin; Fan, Jonathan A.; Su, Yewang; Su, Jessica; Zhang, Huigang; Cheng, Huanyu; Lu, Bingwei; Yu, Cunjiang; Chuang, Chi; Kim, Tae-Il; Song, Taeseup; Shigeta, Kazuyo; Kang, Sen; Dagdeviren, Canan; Petrov, Ivan; Braun, Paul V.; Huang, Yonggang; Paik, Ungyu; Rogers, John A.

2013-02-01

An important trend in electronics involves the development of materials, mechanical designs and manufacturing strategies that enable the use of unconventional substrates, such as polymer films, metal foils, paper sheets or rubber slabs. The last possibility is particularly challenging because the systems must accommodate not only bending but also stretching. Although several approaches are available for the electronics, a persistent difficulty is in power supplies that have similar mechanical properties, to allow their co-integration with the electronics. Here we introduce a set of materials and design concepts for a rechargeable lithium ion battery technology that exploits thin, low modulus silicone elastomers as substrates, with a segmented design in the active materials, and unusual ‘self-similar’ interconnect structures between them. The result enables reversible levels of stretchability up to 300%, while maintaining capacity densities of ~1.1 mAh cm-2. Stretchable wireless power transmission systems provide the means to charge these types of batteries, without direct physical contact.

Mechanics analysis and design of fractal interconnects for stretchable batteries

NASA Astrophysics Data System (ADS)

Huang, Yonggang

2014-03-01

An important trend in electronics involves the development of materials, mechanical designs and manufacturing strategies that enable the use of unconventional substrates, such as polymer films, metal foils, paper sheets or rubber slabs. The last possibility is particularly challenging because the systems must accommodate not only bending but also stretching. Although several approaches are available for the electronics, a persistent difficulty is in power supplies that have similar mechanical properties, to allow their co-integration with the electronics. Here we introduce a set of materials and design concepts for a rechargeable lithium ion battery technology that exploits thin, low modulus silicone elastomers as substrates, with a segmented design in the active materials, and unusual ``self-similar'' interconnect structures between them. The result enables reversible levels of stretchability up to 300%, while maintaining capacity densities of ~1.1 mAh cm-2. Stretchable wireless power transmission systems provide the means to charge these types of batteries, without direct physical contact.

Stretchable batteries with self-similar serpentine interconnects and integrated wireless recharging systems.

PubMed

Xu, Sheng; Zhang, Yihui; Cho, Jiung; Lee, Juhwan; Huang, Xian; Jia, Lin; Fan, Jonathan A; Su, Yewang; Su, Jessica; Zhang, Huigang; Cheng, Huanyu; Lu, Bingwei; Yu, Cunjiang; Chuang, Chi; Kim, Tae-Il; Song, Taeseup; Shigeta, Kazuyo; Kang, Sen; Dagdeviren, Canan; Petrov, Ivan; Braun, Paul V; Huang, Yonggang; Paik, Ungyu; Rogers, John A

2013-01-01

An important trend in electronics involves the development of materials, mechanical designs and manufacturing strategies that enable the use of unconventional substrates, such as polymer films, metal foils, paper sheets or rubber slabs. The last possibility is particularly challenging because the systems must accommodate not only bending but also stretching. Although several approaches are available for the electronics, a persistent difficulty is in power supplies that have similar mechanical properties, to allow their co-integration with the electronics. Here we introduce a set of materials and design concepts for a rechargeable lithium ion battery technology that exploits thin, low modulus silicone elastomers as substrates, with a segmented design in the active materials, and unusual 'self-similar' interconnect structures between them. The result enables reversible levels of stretchability up to 300%, while maintaining capacity densities of ~1.1 mAh cm(-2). Stretchable wireless power transmission systems provide the means to charge these types of batteries, without direct physical contact.

Particle formation in SiOx film deposition by low frequency plasma enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Yamaguchi, Tomoyo; Sakamoto, Naoshi; Shimozuma, Mitsuo; Yoshino, Masaki; Tagashira, Hiroaki

1998-01-01

Dust particle formation dynamics in the process of SiOx film deposition from a SiH4 and N2O gas mixture by a low frequency plasma enhanced chemical vapor deposition have been investigated using scanning electron microscopy and laser light scattering. The deposited films are confirmed to be SiOx from the measurements of Auger electron spectroscopy, x-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy. It is observed by scanning electron microscopy that particles are deposited on Si substrate at the plasma power frequency f=5 kHz and above both with and without substrate heating (400 °C), while no particle is deposited below f=1 kHz. Moreover, the laser light scattering indicates that particles are generated at the plasma power frequency of f=3 kHz and above in the gas phase, and that they are not generated in the gas phase at below f=3 kHz. Properties (the refractive index, resistivity, and Vickers hardness) of the films with particles are inferior to those of the films without particles. This article has revealed experimentally the effect of plasma power frequency on SiOx particle formation and makes a contribution to the explication of the particle formation mechanism. We suggest that high-quality film deposition with the low frequency plasma enhanced chemical vapor deposition method is attained at f=1 kHz or less without substrate heating.

Polymer substrates for flexible photovoltaic cells application in personal electronic system

NASA Astrophysics Data System (ADS)

Znajdek, K.; Sibiński, M.; Strąkowska, A.; Lisik, Z.

2016-01-01

The article presents an overview of polymeric materials for flexible substrates in photovoltaic (PV) structures that could be used as power supply in the personal electronic systems. Four types of polymers have been elected for testing. The first two are the most specialized and heat resistant polyimide films. The third material is transparent polyethylene terephthalate film from the group of polyesters which was proposed as a cheap and commercially available substrate for the technology of photovoltaic cells in a superstrate configuration. The last selected polymeric material is a polysiloxane, which meets the criteria of high elasticity, is temperature resistant and it is also characterized by relatively high transparency in the visible light range. For the most promising of these materials additional studies were performed in order to select those of them which represent the best optical, mechanical and temperature parameters according to their usage for flexible substrates in solar cells.

Laser Cladding of Ultra-Thin Nickel-Based Superalloy Sheets.

PubMed

Gabriel, Tobias; Rommel, Daniel; Scherm, Florian; Gorywoda, Marek; Glatzel, Uwe

2017-03-10

Laser cladding is a well-established process to apply coatings on metals. However, on substrates considerably thinner than 1 mm it is only rarely described in the literature. In this work 200 µm thin sheets of nickel-based superalloy 718 are coated with a powder of a cobalt-based alloy, Co-28Cr-9W-1.5Si, by laser cladding. The process window is very narrow, therefore, a precisely controlled Yb fiber laser was used. To minimize the input of energy into the substrate, lines were deposited by setting single overlapping points. In a design of experiments (DoE) study, the process parameters of laser power, laser spot area, step size, exposure time, and solidification time were varied and optimized by examining the clad width, weld penetration, and alloying depth. The microstructure of the samples was investigated by optical microscope (OM) and scanning electron microscopy (SEM), combined with electron backscatter diffraction (EBSD) and energy dispersive X-ray spectroscopy (EDX). Similarly to laser cladding of thicker substrates, the laser power shows the highest influence on the resulting clad. With a higher laser power, the clad width and alloying depth increase, and with a larger laser spot area the weld penetration decreases. If the process parameters are controlled precisely, laser cladding of such thin sheets is manageable.

Laser Cladding of Ultra-Thin Nickel-Based Superalloy Sheets

PubMed Central

Gabriel, Tobias; Rommel, Daniel; Scherm, Florian; Gorywoda, Marek; Glatzel, Uwe

2017-01-01

Laser cladding is a well-established process to apply coatings on metals. However, on substrates considerably thinner than 1 mm it is only rarely described in the literature. In this work 200 µm thin sheets of nickel-based superalloy 718 are coated with a powder of a cobalt-based alloy, Co–28Cr–9W–1.5Si, by laser cladding. The process window is very narrow, therefore, a precisely controlled Yb fiber laser was used. To minimize the input of energy into the substrate, lines were deposited by setting single overlapping points. In a design of experiments (DoE) study, the process parameters of laser power, laser spot area, step size, exposure time, and solidification time were varied and optimized by examining the clad width, weld penetration, and alloying depth. The microstructure of the samples was investigated by optical microscope (OM) and scanning electron microscopy (SEM), combined with electron backscatter diffraction (EBSD) and energy dispersive X-ray spectroscopy (EDX). Similarly to laser cladding of thicker substrates, the laser power shows the highest influence on the resulting clad. With a higher laser power, the clad width and alloying depth increase, and with a larger laser spot area the weld penetration decreases. If the process parameters are controlled precisely, laser cladding of such thin sheets is manageable. PMID:28772639

Piezoelectric polymer multilayer on flexible substrate for energy harvesting.

PubMed

Zhang, Lei; Oh, Sharon Roslyn; Wong, Ting Chong; Tan, Chin Yaw; Yao, Kui

2013-09-01

A piezoelectric polymer multilayer structure formed on a flexible substrate is investigated for mechanical energy harvesting under bending mode. Analytical and numerical models are developed to clarify the effect of material parameters critical to the energy harvesting performance of the bending multilayer structure. It is shown that the maximum power is proportional to the square of the piezoelectric stress coefficient and the inverse of dielectric permittivity of the piezoelectric polymer. It is further found that a piezoelectric multilayer with thinner electrodes can generate more electric energy in bending mode. The effect of improved impedance matching in the multilayer polymer on energy output is remarkable. Comparisons between piezoelectric ceramic multilayers and polymer multilayers on flexible substrate are discussed. The fabrication of a P(VDF-TrFE) multilayer structure with a thin Al electrode layer is experimentally demonstrated by a scalable dip-coating process on a flexible aluminum substrate. The results indicate that it is feasible to produce a piezoelectric polymer multilayer structure on flexible substrate for harvesting mechanical energy applicable for many low-power electronics.

Aligned Carbon Nanotube Carpets on Carbon Substrates for High Power Electronic Applications

DTIC Science & Technology

2016-06-01

SiOx by a vapor-solid-solid mechanism ,” J. Am. Chem. Soc., vol. 133, pp. 197–199, 2011. [146] B. Liu, W. Ren, C. Liu, C.-H. Sun , L. Gao, S. Li, C... Mechanical and Thermal Systems Branch Power and Control Division JUNE 2016 Interim Report DISTRIBUTION STATEMENT A: Approved for public release...Advisor Program Engineer Mechanical and Thermal Systems Branch Mechanical and Thermal Systems Branch Power and Control Division Power and Control

Methods for fabrication of flexible hybrid electronics

NASA Astrophysics Data System (ADS)

Street, Robert A.; Mei, Ping; Krusor, Brent; Ready, Steve E.; Zhang, Yong; Schwartz, David E.; Pierre, Adrien; Doris, Sean E.; Russo, Beverly; Kor, Siv; Veres, Janos

2017-08-01

Printed and flexible hybrid electronics is an emerging technology with potential applications in smart labels, wearable electronics, soft robotics, and prosthetics. Printed solution-based materials are compatible with plastic film substrates that are flexible, soft, and stretchable, thus enabling conformal integration with non-planar objects. In addition, manufacturing by printing is scalable to large areas and is amenable to low-cost sheet-fed and roll-to-roll processes. FHE includes display and sensory components to interface with users and environments. On the system level, devices also require electronic circuits for power, memory, signal conditioning, and communications. Those electronic components can be integrated onto a flexible substrate by either assembly or printing. PARC has developed systems and processes for realizing both approaches. This talk presents fabrication methods with an emphasis on techniques recently developed for the assembly of off-the-shelf chips. A few examples of systems fabricated with this approach are also described.

Noncontact measurement of substrate temperature by optical low-coherence interferometry in high-power pulsed magnetron sputtering

NASA Astrophysics Data System (ADS)

Hattori, Katsuhiro; Ohta, Takayuki; Oda, Akinori; Kousaka, Hiroyuki

2018-01-01

Substrate temperature is one of the important parameters that affect the quality of deposited films. The monitoring of the substrate temperature is an important technique of controlling the deposition process precisely. In this study, the Si substrate temperature in high-power pulse magnetron sputtering (HPPMS) was measured by a noncontact method based on optical low-coherence interferometry (LCI). The measurement was simultaneously performed using an LCI system and a thermocouple (TC) as a contact measurement method. The difference in measured value between the LCI system and the TC was about 7.4 °C. The reproducibilities of measurement for the LCI system and TC were ±0.7 and ±2.0 °C, respectively. The heat influx from the plasma to the substrate was estimated using the temporal variation of substrate temperature and increased from 19.7 to 160.0 mW/cm2 with increasing target applied voltage. The major factor for the enhancement of the heat influx would be charged species such as ions and electrons owing to the high ionization degree of sputtered metal particles in HPPMS.

Ultra high speed image processing techniques. [electronic packaging techniques

NASA Technical Reports Server (NTRS)

Anthony, T.; Hoeschele, D. F.; Connery, R.; Ehland, J.; Billings, J.

1981-01-01

Packaging techniques for ultra high speed image processing were developed. These techniques involve the development of a signal feedthrough technique through LSI/VLSI sapphire substrates. This allows the stacking of LSI/VLSI circuit substrates in a 3 dimensional package with greatly reduced length of interconnecting lines between the LSI/VLSI circuits. The reduced parasitic capacitances results in higher LSI/VLSI computational speeds at significantly reduced power consumption levels.

Enhancement of Ti-containing hydrogenated carbon (Tisbnd C:H) films by high-power plasma-sputtering

NASA Astrophysics Data System (ADS)

Gwo, Jyh; Chu, Chun-Lin; Tsai, Ming-Jui; Lee, Shyong

2012-02-01

Ti-containing amorphous hydrogenated carbon (Tisbnd C:H) thin films were deposited on stainless steel SS304 substrates by high-power pulsed magnetron sputtering (HPPMS) in an atmosphere of mixed Ar and C2H2 gases using titanium metal as the cathodic material. The multilayer structure of the deposited film had a Tisbnd TiCsbnd DLC gradient to improve adhesion and reduce residual stress. This study investigates the effects of substrate bias and target-to-substrate distance on the mechanical properties of Tisbnd C:H films. Film properties, including composition, morphology, microstructure, mechanical, and tribology, were examined by glow discharge spectroscopy (GDS), scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, and a nanoindenter and a pin-on-disk tribometer. Experiments revealed impressive results.

Organic electronics: Battery-like artificial synapses

NASA Astrophysics Data System (ADS)

Yang, J. Joshua; Xia, Qiangfei

2017-04-01

Borrowing the operating principles of a battery, a three-terminal organic switch has been developed on a flexible plastic substrate. The device consumes very little power and can be used as an artificial synapse for brain-inspired computing.

Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates

DOE PAGES

Burmistrova, Polina V.; Zakharov, Dmitri N.; Favaloro, Tela; ...

2015-03-14

Four epitaxial ScN(001) thin films were successfully deposited on MgO(001) substrates by dc reactive magnetron sputtering at 2, 5, 10, and 20 mTorr in an Ar/N2 ambient atmosphere at 650 °C. The microstructure of the resultant films was analyzed by x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Electrical resistivity, electron mobility and concentration were measured using the room temperature Hall technique, and temperature dependent in-plain measurements of the thermoelectric properties of the ScN thin films were performed. The surface morphology and film crystallinity significantly degrade with increasing deposition pressure. The ScN thin film deposited at 20 mTorr exhibitsmore » the presence of <221> oriented secondary grains resulting in decreased electric properties and a low thermoelectric power factor of 0.5 W/m-K² at 800 K. ScN thin films grown at 5 and 10 mTorr are single crystalline, yielding the power factor of approximately 2.5 W/m-K² at 800 K. The deposition performed at 2 mTorr produces the highest quality ScN thin film with the electron mobility of 98 cm² V⁻¹ s⁻¹ and the power factor of 3.3 W/m-K² at 800 K.« less

Quasi-steady-state voltammetry of rapid electron transfer reactions at the macroscopic substrate of the scanning electrochemical microscope.

PubMed

Nioradze, Nikoloz; Kim, Jiyeon; Amemiya, Shigeru

2011-02-01

We report on a novel theory and experiment for scanning electrochemical microscopy (SECM) to enable quasi-steady-state voltammetry of rapid electron transfer (ET) reactions at macroscopic substrates. With this powerful approach, the substrate potential is cycled widely across the formal potential of a redox couple while the reactant or product of a substrate reaction is amperometrically detected at the tip in the feedback or substrate generation/tip collection mode, respectively. The plot of tip current versus substrate potential features the retraceable sigmoidal shape of a quasi-steady-state voltammogram although a transient voltammogram is obtained at the macroscopic substrate. Finite element simulations reveal that a short tip-substrate distance and a reversible substrate reaction (except under the tip) are required for quasi-steady-state voltammetry. Advantageously, a pair of quasi-steady-state voltammograms is obtained by employing both operation modes to reliably determine all transport, thermodynamic, and kinetic parameters as confirmed experimentally for rapid ET reactions of ferrocenemethanol and 7,7,8,8-tetracyanoquinodimethane at a Pt substrate with ∼0.5 μm-radius Pt tips positioned at 90 nm-1 μm distances. Standard ET rate constants of ∼7 cm/s were obtained for the latter mediator as the largest determined for a substrate reaction by SECM. Various potential applications of quasi-steady-state voltammetry are also proposed.

Micro solid oxide fuel cell fabricated on porous stainless steel: a new strategy for enhanced thermal cycling ability

PubMed Central

Kim, Kun Joong; Park, Byung Hyun; Kim, Sun Jae; Lee, Younki; Bae, Hongyeul; Choi, Gyeong Man

2016-01-01

Miniaturized solid oxide fuel cells (micro-SOFCs) are being extensively studied as a promising alternative to Li batteries for next generation portable power. A new micro-SOFC is designed and fabricated which shows enhanced thermal robustness by employing oxide-based thin-film electrode and porous stainless steel (STS) substrate. To deposit gas-tight thin-film electrolyte on STS, nano-porous composite oxide is proposed and applied as a new contact layer on STS. The micro-SOFC fabricated on composite oxide- STS dual layer substrate shows the peak power density of 560 mW cm−2 at 550 °C and maintains this power density during rapid thermal cycles. This cell may be suitable for portable electronic device that requires high power-density and fast thermal cycling. PMID:26928921

Micro solid oxide fuel cell fabricated on porous stainless steel: a new strategy for enhanced thermal cycling ability.

PubMed

Kim, Kun Joong; Park, Byung Hyun; Kim, Sun Jae; Lee, Younki; Bae, Hongyeul; Choi, Gyeong Man

2016-03-01

Miniaturized solid oxide fuel cells (micro-SOFCs) are being extensively studied as a promising alternative to Li batteries for next generation portable power. A new micro-SOFC is designed and fabricated which shows enhanced thermal robustness by employing oxide-based thin-film electrode and porous stainless steel (STS) substrate. To deposit gas-tight thin-film electrolyte on STS, nano-porous composite oxide is proposed and applied as a new contact layer on STS. The micro-SOFC fabricated on composite oxide- STS dual layer substrate shows the peak power density of 560 mW cm(-2) at 550 °C and maintains this power density during rapid thermal cycles. This cell may be suitable for portable electronic device that requires high power-density and fast thermal cycling.

AZO nanorods thin films by sputtering method

NASA Astrophysics Data System (ADS)

Rosli, A. B.; Shariffudin, S. S.; Awang, Z.; Herman, S. H.

2018-05-01

Al-doped zinc oxide (AZO) nanorods thin film were deposited on Au catalyst using RF sputtering at 300 °C. The 15 nm thickness Au catalyst were deposited on glass substrates by sputtering method followed by annealing for 15 min at 500 °C to form Au nanostructures on the glass substrate. The AZO thin films were then deposited on Au catalyst at different RF power ranging from 50 - 200 W. The morphology of AZO was characterized using Field Emission Scanning Electron Microscopy while X-ray Diffraction was used to examine crystallinity of AZO thin films. From this work, the AZO nanorods was found grow at 200 W RF power.

Wireless hydrotherapy smart suit for monitoring handicapped people

NASA Astrophysics Data System (ADS)

Correia, Jose H.; Mendes, Paulo M.

2005-02-01

This paper presents a smart suit, water impermeable, containing sensors and electronics for monitoring handicapped people at hydrotherapy sessions in swimming-pools. For integration into textiles, electronic components should be designed in a functional, robust and inexpensive way. Therefore, small-size electronics microsystems are a promising approach. The smart suit allows the monitoring of individual biometric data, such as heart rate, temperature and movement of the body. Two solutions for transmitting the data wirelessly are presented: through a low-voltage (3.0 V), low-power, CMOS RF IC (1.6 mm x 1.5 mm size dimensions) operating at 433 MHz, with ASK modulation and a patch antenna built on lossy substrates compatible with integrated circuits fabrication. Two different substrates were used for antenna implementation: high-resistivity silicon (HRS) and Corning Pyrex #7740 glass. The antenna prototypes were built to operate close to the 5 GHz ISM band. They operate at a center frequency of 5.705 GHz (HRS) and 5.995 GHz (Pyrex). The studied parameters were: substrate thickness, substrate losses, oxide thickness, metal conductivity and thickness. The antenna on HRS uses an area of 8 mm2, providing a 90 MHz bandwidth and ~0.3 dBi of gain. On a glass substrate, the antenna uses 12 mm2, provides 100 MHz bandwidth and ~3 dBi of gain.

Testing the effects of temperature and humidity on printed passive UHF RFID tags on paper substrate

NASA Astrophysics Data System (ADS)

Linnea Merilampi, Sari; Virkki, Johanna; Ukkonen, Leena; Sydänheimo, Lauri

2014-05-01

This article is an interesting substrate material for environmental-friendly printable electronics. In this study, screen-printed RFID tags on paper substrate are examined. Their reliability was tested with low temperature, high temperature, slow temperature cycling, high temperature and high humidity and water dipping test. Environmental stresses affect the tag antenna impedance, losses and radiation characteristics due to their impact on the ink film and paper substrate. Low temperature, temperature cycling and high humidity did not have a radical effect on the measured parameters: threshold power, backscattered signal power or read range of the tags. However, the frequency response and the losses of the tags were slightly affected. Exposure to high temperature was found to even improve the tag performance due to the positive effect of high temperature on the ink film. The combined high humidity and high temperature had the most severe effect on the tag performance. The threshold power increased, backscattered power decreased and the read range was shortened. On the whole, the results showed that field use of these tags in high, low and changing temperature conditions and high humidity conditions is possible. Use of these tags in combined high-humidity and high-temperature conditions should be carefully considered.

Endocrine disruptive estrogens role in electron transfer: bio-electrochemical remediation with microbial mediated electrogenesis.

PubMed

Kumar, A Kiran; Reddy, M Venkateswar; Chandrasekhar, K; Srikanth, S; Mohan, S Venkata

2012-01-01

Bioremediation of selected endocrine disrupting compounds (EDCs)/estrogens viz. estriol (E3) and ethynylestradiol (EE2) was evaluated in bio-electrochemical treatment (BET) system with simultaneous power generation. Estrogens supplementation along with wastewater documented enhanced electrogenic activity indicating their function in electron transfer between biocatalyst and anode as electron shuttler. EE2 addition showed more positive impact on the electrogenic activity compared to E3 supplementation. Higher estrogen concentration showed inhibitory effect on the BET performance. Poising potential during start up phase showed a marginal influence on the power output. The electrons generated during substrate degradation might have been utilized for the EDCs break down. Fuel cell behavior and anodic oxidation potential supported the observed electrogenic activity with the function of estrogens removal. Voltammetric profiles, dehydrogenase and phosphatase enzyme activities were also found to be in agreement with the power generation, electron discharge and estrogens removal. Copyright © 2011 Elsevier Ltd. All rights reserved.

High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate

NASA Astrophysics Data System (ADS)

Huang, Hung-Wen; Huang, Jhi-Kai; Kuo, Shou-Yi; Lee, Kang-Yuan; Kuo, Hao-Chung

2010-06-01

In this paper, GaN-based LEDs with a nanoscale patterned sapphire substrate (NPSS) and a SiO2 photonic quasicrystal (PQC) structure on an n-GaN layer using nanoimprint lithography are fabricated and investigated. The light output power of LED with a NPSS and a SiO2 PQC structure on an n-GaN layer was 48% greater than that of conventional LED. Strong enhancement in output power is attributed to better epitaxial quality and higher reflectance resulted from NPSS and PQC structures. Transmission electron microscopy images reveal that threading dislocations are blocked or bended in the vicinities of NPSS layer. These results provide promising potential to increase output power for commercial light emitting devices.

Direct observation of small cluster mobility and ripening. [during annealing of metal films on amorphous substrates

NASA Technical Reports Server (NTRS)

Heinemann, K.; Poppa, H.

1975-01-01

Direct evidence is reported for the simultaneous occurrence of Ostwald ripening and short-distance cluster mobility during annealing of discontinuous metal films on clean amorphous substrates. The annealing characteristics of very thin particulate deposits of silver on amorphized clean surfaces of single crystalline thin graphite substrates were studied by in-situ transmission electron microscopy (TEM) under controlled environmental conditions (residual gas pressure of 10 to the minus 9th power torr) in the temperature range from 25 to 450 C. Sputter cleaning of the substrate surface, metal deposition, and annealing were monitored by TEM observation. Pseudostereographic presentation of micrographs in different annealing stages, the observation of the annealing behavior at cast shadow edges, and measurements with an electronic image analyzing system were employed to aid the visual perception and the analysis of changes in deposit structure recorded during annealing. Slow Ostwald ripening was found to occur in the entire temperature range, but the overriding surface transport mechanism was short-distance cluster mobility.

Gold/silver coated nanoporous ceramic membranes: a new substrate for SERS studies

NASA Astrophysics Data System (ADS)

Kassu, A.; Robinson, P.; Sharma, A.; Ruffin, P. B.; Brantley, C.; Edwards, E.

2010-08-01

Surface Enhanced Raman Scattering (SERS) is a recently discovered powerful technique which has demonstrated sensitivity and selectivity for detecting single molecules of certain chemical species. This is due to an enhancement of Raman scattered light by factors as large as 1015. Gold and Silver-coated substrates fabricated by electron-beam lithography on Silicon are widely used in SERS technique. In this paper, we report the use of nanoporous ceramic membranes for SERS studies. Nanoporous membranes are widely used as a separation membrane in medical devices, fuel cells and other studies. Three different pore diameter sizes of commercially available nanoporous ceramic membranes: 35 nm, 55nm and 80nm are used in the study. To make the membranes SERS active, they are coated with gold/silver using sputtering techniques. We have seen that the membranes coated with gold layer remain unaffected even when immersed in water for several days. The results show that gold coated nanoporous membranes have sensitivity comparable to substrates fabricated by electron-beam lithography on Silicon substrates.

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs).

PubMed

Kumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao

2017-12-11

Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an I ON /I OFF ratio of more than 10 6 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.

Active vacuum brazing of CNT films to metal substrates for superior electron field emission performance

NASA Astrophysics Data System (ADS)

Longtin, Rémi; Sanchez-Valencia, Juan Ramon; Shorubalko, Ivan; Furrer, Roman; Hack, Erwin; Elsener, Hansrudolf; Gröning, Oliver; Greenwood, Paul; Rupesinghe, Nalin; Teo, Kenneth; Leinenbach, Christian; Gröning, Pierangelo

2015-02-01

The joining of macroscopic films of vertically aligned multiwalled carbon nanotubes (CNTs) to titanium substrates is demonstrated by active vacuum brazing at 820 °C with a Ag-Cu-Ti alloy and at 880 °C with a Cu-Sn-Ti-Zr alloy. The brazing methodology was elaborated in order to enable the production of highly electrically and thermally conductive CNT/metal substrate contacts. The interfacial electrical resistances of the joints were measured to be as low as 0.35 Ω. The improved interfacial transport properties in the brazed films lead to superior electron field-emission properties when compared to the as-grown films. An emission current of 150 μA was drawn from the brazed nanotubes at an applied electric field of 0.6 V μm-1. The improvement in electron field-emission is mainly attributed to the reduction of the contact resistance between the nanotubes and the substrate. The joints have high re-melting temperatures up to the solidus temperatures of the alloys; far greater than what is achievable with standard solders, thus expanding the application potential of CNT films to high-current and high-power applications where substantial frictional or resistive heating is expected.

Active vacuum brazing of CNT films to metal substrates for superior electron field emission performance

PubMed Central

Longtin, Rémi; Ramon Sanchez-Valencia, Juan; Shorubalko, Ivan; Furrer, Roman; Hack, Erwin; Elsener, Hansrudolf; Gröning, Oliver; Greenwood, Paul; Rupesinghe, Nalin; Teo, Kenneth; Leinenbach, Christian; Gröning, Pierangelo

2015-01-01

The joining of macroscopic films of vertically aligned multiwalled carbon nanotubes (CNTs) to titanium substrates is demonstrated by active vacuum brazing at 820 °C with a Ag–Cu–Ti alloy and at 880 °C with a Cu–Sn–Ti–Zr alloy. The brazing methodology was elaborated in order to enable the production of highly electrically and thermally conductive CNT/metal substrate contacts. The interfacial electrical resistances of the joints were measured to be as low as 0.35 Ω. The improved interfacial transport properties in the brazed films lead to superior electron field-emission properties when compared to the as-grown films. An emission current of 150 μA was drawn from the brazed nanotubes at an applied electric field of 0.6 V μm−1. The improvement in electron field-emission is mainly attributed to the reduction of the contact resistance between the nanotubes and the substrate. The joints have high re-melting temperatures up to the solidus temperatures of the alloys; far greater than what is achievable with standard solders, thus expanding the application potential of CNT films to high-current and high-power applications where substantial frictional or resistive heating is expected. PMID:27877755

[Performance of Electricity Generation and Feasibility of Discontinuous Power Supply of MFC by Using Pretreated Excess Sludge as Fuel].

PubMed

Zhao, Yan-hui; Zhao, Yang-guo; Guo, Liang

2016-03-15

The feasibility of treating pretreated excess sludge and capacity of supplying continuous power of microbial fuel cells (MFCs) were investigated. Two-chamber microbial fuel cells were started up and operated by using thermal pretreated excess sludge as the substrate. Potential fluctuations were achieved by changing the cathode electron acceptor. During the changes of electron acceptor, the operational stability of MFCs was assessed. The results indicated that the MFCs started successfully with oxygen as the cathode electron acceptor and reached 0.24 V after 148 hours. When the cathode electron acceptor was replaced by potassium ferricyanide, MFCs could obtain the maximum output voltage and maximum power density of 0.66 V and 4.21 W · m⁻³, respectively. When the cathode electron acceptor was changed from oxygen to potassium ferricyanide or the MFCs were closed circuit, the output power of MFCs recovered rapidly. In addition, changes of electron acceptor showed no effect on the removal of COD and ammonia nitrogen. Their removal efficiencies approached to 70% and 80%, respectively. This study concluded that MFC could treat the pretreated excess sludge and produce electricity simultaneously with a high power density. The MFC could also achieve discontinuous electricity supply during operation.

Effect of Laser Power on Metallurgical, Mechanical and Tribological Characteristics of Hardfaced Surfaces of Nickel-Based Alloy

NASA Astrophysics Data System (ADS)

Gnanasekaran, S.; Padmanaban, G.; Balasubramanian, V.

2017-12-01

In this present work, nickel based alloy was deposited on 316 LN austenitic stainless steel (ASS) by a laser hardfacing technique to investigate the influence of laser power on macrostructure, microstructure, microhardness, dilution and wear characteristics. The laser power varied from 1.1 to 1.9 kW. The phase constitution, microstructure and microhardness were examined by optical microscope, scanning electron microscopy, energy dispersion spectroscopy and Vickers microhardness tester. The wear characteristics of the hardfaced surfaces and substrate were evaluated at room temperature (RT) under dry sliding wear condition (pin-on-disc). The outcome demonstrates that as the laser power increases, dilution increases and hardness of the deposit decreases. This is because excess heat melts more volume of substrate material and increases the dilution; subsequently it decreases the hardness of the deposit. The microstructure of the deposit is characterized by Ni-rich carbide, boride and silicide.

Synthesis of Poly-Silicon Thin Films on Glass Substrate Using Laser Initiated Metal Induced Crystallization of Amorphous Silicon for Space Power Application

NASA Technical Reports Server (NTRS)

Abu-Safe, Husam H.; Naseem, Hameed A.; Brown, William D.

2007-01-01

Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.

Tape transfer atomization patterning of liquid alloys for microfluidic stretchable wireless power transfer.

PubMed

Jeong, Seung Hee; Hjort, Klas; Wu, Zhigang

2015-02-12

Stretchable electronics offers unsurpassed mechanical compliance on complex or soft surfaces like the human skin and organs. To fully exploit this great advantage, an autonomous system with a self-powered energy source has been sought for. Here, we present a new technology to pattern liquid alloys on soft substrates, targeting at fabrication of a hybrid-integrated power source in microfluidic stretchable electronics. By atomized spraying of a liquid alloy onto a soft surface with a tape transferred adhesive mask, a universal fabrication process is provided for high quality patterns of liquid conductors in a meter scale. With the developed multilayer fabrication technique, a microfluidic stretchable wireless power transfer device with an integrated LED was demonstrated, which could survive cycling between 0% and 25% strain over 1,000 times.

Tape Transfer Atomization Patterning of Liquid Alloys for Microfluidic Stretchable Wireless Power Transfer

PubMed Central

Jeong, Seung Hee; Hjort, Klas; Wu, Zhigang

2015-01-01

Stretchable electronics offers unsurpassed mechanical compliance on complex or soft surfaces like the human skin and organs. To fully exploit this great advantage, an autonomous system with a self-powered energy source has been sought for. Here, we present a new technology to pattern liquid alloys on soft substrates, targeting at fabrication of a hybrid-integrated power source in microfluidic stretchable electronics. By atomized spraying of a liquid alloy onto a soft surface with a tape transferred adhesive mask, a universal fabrication process is provided for high quality patterns of liquid conductors in a meter scale. With the developed multilayer fabrication technique, a microfluidic stretchable wireless power transfer device with an integrated LED was demonstrated, which could survive cycling between 0% and 25% strain over 1,000 times. PMID:25673261

Study of the Fracture Mechanisms of Electroplated Metallization Systems Using In Situ Microtension Test

NASA Astrophysics Data System (ADS)

Msolli, Sabeur; Kim, Heung Soo

2018-07-01

This framework assesses the mechanical behavior of some potential thin/thick metallization systems in use as either ohmic contacts for diamond semi-conductors or for metallization on copper double bounded ceramic substrates present in the next-generation power electronics packaging. The interesting and unique characteristic of this packaging is the use of diamond as a semi-conductor material instead of silicon to increase the lifetime of embedded power converters for use in aeronautical applications. Theoretically, such packaging is able to withstand temperatures of up to 300 °C without breaking the semi-conductor, provided that the constitutive materials of the packaging are compatible. Metallization is very important to protect the chips and substrates. Therefore, we address this issue in the present work. The tested metallization systems are Ni/Au, Ni/Cr/Au and Ni/Cr. These specific systems were studied since they can be used in conjunction with existing bonding technologies, including AuGe soldering, Ag-In Transient liquid Phase Bonding and silver nanoparticle sintering. The metallization is achieved via electrodeposition, and a mechanical test, consisting of a microtension technique, is carried out at room temperature inside a scanning electron microscopy chamber. The technique permits observations the cracks initiation and growth in the metallization to locate the deformation zones and identify the fracture mechanisms. Different failure mechanisms were shown to occur depending on the metallic layers deposited on top of the copper substrate. The density of these cracks depends on the imposed load and the involved metallization. These observations will help choose the metallization that is compatible with the particular bonding material, and manage mechanical stress due to thermal cycling so that they can be used as a constitutive component for high-temperature power electronics packaging.

Study of the Fracture Mechanisms of Electroplated Metallization Systems Using In Situ Microtension Test

NASA Astrophysics Data System (ADS)

Msolli, Sabeur; Kim, Heung Soo

2018-03-01

This framework assesses the mechanical behavior of some potential thin/thick metallization systems in use as either ohmic contacts for diamond semi-conductors or for metallization on copper double bounded ceramic substrates present in the next-generation power electronics packaging. The interesting and unique characteristic of this packaging is the use of diamond as a semi-conductor material instead of silicon to increase the lifetime of embedded power converters for use in aeronautical applications. Theoretically, such packaging is able to withstand temperatures of up to 300 °C without breaking the semi-conductor, provided that the constitutive materials of the packaging are compatible. Metallization is very important to protect the chips and substrates. Therefore, we address this issue in the present work. The tested metallization systems are Ni/Au, Ni/Cr/Au and Ni/Cr. These specific systems were studied since they can be used in conjunction with existing bonding technologies, including AuGe soldering, Ag-In Transient liquid Phase Bonding and silver nanoparticle sintering. The metallization is achieved via electrodeposition, and a mechanical test, consisting of a microtension technique, is carried out at room temperature inside a scanning electron microscopy chamber. The technique permits observations the cracks initiation and growth in the metallization to locate the deformation zones and identify the fracture mechanisms. Different failure mechanisms were shown to occur depending on the metallic layers deposited on top of the copper substrate. The density of these cracks depends on the imposed load and the involved metallization. These observations will help choose the metallization that is compatible with the particular bonding material, and manage mechanical stress due to thermal cycling so that they can be used as a constitutive component for high-temperature power electronics packaging.

Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Frazier, Donald Odell (Inventor); Ray, William Johnstone (Inventor); Fuller, Kirk A. (Inventor); Lowenthal, Mark David (Inventor); Shotton, Neil O. (Inventor)

2014-01-01

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.

Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system

NASA Technical Reports Server (NTRS)

Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor); Blanchard, Richard A. (Inventor); Lowenthal, Mark D. (Inventor); Lewandowski, Mark Allan (Inventor); Ray, William Johnstone (Inventor); Shotton, Neil O. (Inventor)

2012-01-01

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.

Final Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hameed A. Naseem, Husam H. Abu-Safe

2007-02-09

The purpose of this project was to investigate metal-induced crystallization of amorphous silicon at low temperatures using excitation sources such as laser and rapid thermal annealing, as well as, electric field. Deposition of high quality crystalline silicon at low temperatures allows the use of low cost soda-lime glass and polymeric films for economically viable photovoltaic solar cells and low cost large area flat panel displays. In light of current and expected demands on Si supply due to expanding use of consumer electronic products throughout the world and the incessant demand for electric power the need for developing high grade Simore » thin films on low cost substrate becomes even more important. We used hydrogenated and un-hydrogenated amorphous silicon deposited by plasma enhanced chemical vapor deposition and sputtering techniques (both of which are extensively used in electronic and solar cell industries) to fabricate nano-crystalline, poly-crystalline (small as well as large grain), and single-crystalline (epitaxial) films at low temperatures. We demonstrated Si nanowires on flat surfaces that can be used for fabricating nanometer scale transistors. We also demonstrated lateral crystallization using Al with and without an applied electric field. These results are critical for high mobility thin film transistors (TFT) for large area display applications. Large grain silicon (~30-50 µm grain size for < 0.5 µm thick films) was demonstrated on glass substrates at low temperatures. We also demonstrated epitaxial growth of silicon on (100) Si substrates at temperatures as low as 450°C. Thin film Si solar cells are being projected as the material of choice for low cost high efficiency solar cells when properly coupled with excellent light-trapping schemes. Ar ion laser (CW) was shown to produce dendritic nanowire structures at low power whereas at higher powers yielded continuous polycrystalline films. The power density required for films in contact with Al was demonstrated to be at least two orders of magnitude lower that that reported in the literature before. Polysilicon was successfully achieved on polyimide (Kapton©) films. Thin film Si solar cells on lightweight stoable polymer offer great advantage for terrestrial and space power applications. In summary we have demonstrated through this research the viability of producing low cost nano-, poly-, and epitaxial Si material on substrates of choice for applications in economically viable environmentally friendly sustainable solar power systems. This truly enabling technology has widespread applications in multibillion dollar electronic industry and consumer products.« less

Origins of large light induced voltage in magnetic tunnel junctions grown on semiconductor substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Y.; Lin, W.; Petit-Watelot, S.

2016-01-14

Recently, the study of interactions between electron spins and heat currents has given rise to the field of “Spin Caloritronics”. Experimental studies of these interactions have shown a possibility to combine the use of heat and light to power magnetic tunnel junction (MTJ) devices. Here we present a careful study of an MTJ device on Si substrate that can be powered entirely by light. We analyze the influence of the material properties, device geometry, and laser characteristics on the electric response of the sample. We demonstrate that by engineering the MTJ and its electrical contact, a large photovoltage reaching 100 mVmore » can be generated. This voltage originates from the Si substrate and depends on the MTJ magnetic configuration. Finally, we discuss the origin of the photo-voltage in terms of Seebeck and photovoltaic effects.« less

Orthogonal Chip Based Electronic Sensors for Chemical Agents

DTIC Science & Technology

2012-04-06

operation with ultralow power requirements. This work has been carried out with the aid of substrate wafers provided by Qualcomm . The initial...produced by Qualcomm as a less expensive OTFT platform for sensors. 8. New Discoveries Air-stable organic thin-film transistor (OTFT) sensors

Formation of conductive copper lines by femtosecond laser irradiation of copper nitride film on plastic substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xiaodong; Yuan, Ningyi, E-mail: nyyuan@cczu.edu.cn; Center for Low-Dimensional Materials, Micro-Nano Devices and Systems, Changzhou University, Changzhou 213164, Jiangsu

2015-05-15

In this paper, we report a simple method to form conductive copper lines by scanning a single-beam femtosecond pulse laser on a plastic substrate covered with copper nitride (Cu{sub 3}N) film. The Cu{sub 3}N films were prepared by DC magnetron sputtering in the presence of an Ar + N{sub 2} atmosphere at 100 °C. The influence of the laser power and scanning speed on the formed copper line width, surface features, and morphology was analyzed by means of optical microscopy, X-ray diffraction, non-contact 3D profilometer, and scanning electron microscopy. The experimental results demonstrate that low laser power and low scanningmore » speed favor the formation of uniform and flat Cu lines. After process optimization, copper lines with a width less than 5 μm were obtained, which provides an attractive application prospect in the field of flexible electronic devices.« less

Effects of solution pH and electrical parameters on hydroxyapatite coatings deposited by a plasma-assisted electrophoresis technique.

PubMed

Nie, X; Leyland, A; Matthews, A; Jiang, J C; Meletis, E I

2001-12-15

Hydroxyapatite (HA) coatings can be deposited using a hybrid process of plasma electrolysis and electrophoresis, called plasma-assisted electrophoretic deposition (PEPD). HA aqueous suspensions with various pH values were prepared using a modified ultrasonic cleaning bath as an agitator/stirrer. Both DC and unbalanced AC power supplies were used to bias the titanium alloy substrate materials employed in this work. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffractometry (XRD), and Fourier transform infrared spectroscopy (FTIR) were used to observe and analyze coating morphology and microstructure. It was shown that the morphology and composition of the calcium phosphate coatings were significantly influenced by solution pH values; the level of "pure" HA in the coatings' composition corresponded to both solution pH and the type of power supply employed. Loss of hydroxyl radials (i.e., dehydroxylation), which degrades the performance of the hydroxyapatite coating in terms of long-term chemical and mechanical stability, can be virtually eliminated by a combination of high pH and unbalanced AC plasma power. In addition, the underlying TiO2 coatings used to support the HA layer (preproduced by plasma electrolysis process) have a nanoscaled (10-20 nm) polycrystalline structure. TEM studies also revealed a dense, continuous amorphous titania layer (10 nm in thickness) at the interface between the Ti alloy substrate and the TiO2 layer, which may play a role in improving the corrosion resistance of the substrate. Such a nanophase TiO2 layer (if used as a coating alone) may also provide a further improvement in osteoinductive properties, compared to a conventional TiO2 coating on the Ti alloy substrate. Copyright 2001 John Wiley & Sons, Inc. J Biomed Mater Res 57: 612-618, 2001

Research Area 4: Electronics: A Special Event at the International Conference on Molecular Beam Epitaxy

DTIC Science & Technology

2015-09-30

cell temperature is shown in Fig. 4. Here we begin with the premise when both In and Ga are incident on the wafer, the Sb consumption rate should be a...monitor the Sb consumption rate while slowly raising the cell temperature . It is evident from the data that the correct rate of total Sb consumption ...rise the substrate temperature during DE phase of DETA technique owing to the heat reflectance effect , while the power supplied to a substrate heater

Alternatives for joining Si wafers to strain-accommodating Cu for high-power electronics

NASA Astrophysics Data System (ADS)

Faust, Nicholas; Messler, Robert W.; Khatri, Subhash

2001-10-01

Differences in the coefficients of thermal expansion (CTE) between silicon wafers and underlying copper electrodes have led to the use of purely mechanical dry pressure contacts for primary electrical and thermal connections in high-power solid-state electronic devices. These contacts are limited by their ability to dissipate I2R heat from within the device and by their thermal fatigue life. To increase heat dissipation and effectively deal with the CTE mismatch, metallurgical bonding of the silicon to a specially-structured, strain-accommodating copper electrode has been proposed. This study was intended to seek alternative methods for and demonstrate the feasibility of bonding Si to structured Cu in high-power solid-state devices. Three different but fundamentally related fluxless approaches identified and preliminarily assessed were: (1) conventional Sn-Ag eutectic solder; (2) a new, commercially-available active solder based on the Sn-Ag eutectic; and (3) solid-liquid interdiffusion bonding using the Au-In system. Metallurgical joints were made with varying quality levels (according to nonde-structive ultrasonic C-scan mapping, SEM, and electron microprobe) using each approach. Mechanical shear testing resulted in cohesive failure within the Si or the filler alloys. The best approach, in which eutectic Sn-Ag solder in pre-alloyed foil form was employed on Si and Cu substrates metallized (from the substrate outward) with Ti, Ni and Au, exhibited joint thermal conduction 74% better than dry pressure contacts.

Large theoretical thermoelectric power factor of suspended single-layer MoS{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babaei, Hasan, E-mail: babaei@illinois.edu, E-mail: babaei@auburn.edu; Mechanical Engineering Department, Auburn University, Auburn, Alabama 36849-5341; Khodadadi, J. M.

2014-11-10

We have calculated the semi-classical thermoelectric power factor of suspended single-layer (SL)- MoS{sub 2} utilizing electron relaxation times derived from ab initio calculations. Measurements of the thermoelectric power factor of SL-MoS{sub 2} on substrates reveal poor power factors. In contrast, we find the thermoelectric power factor of suspended SL-MoS{sub 2} to peak at ∼2.8 × 10{sup 4} μW/m K{sup 2} at 300 K, at an electron concentration of 10{sup 12} cm{sup −2}. This figure is higher than that in bulk Bi{sub 2}Te{sub 3}, for example. Given its relatively high thermal conductivity, suspended SL-MoS{sub 2} may hold promise for in-plane thin-film Peltiermore » coolers, provided reasonable mobilities can be realized.« less

Natural substrate lift-off technique for vertical light-emitting diodes

NASA Astrophysics Data System (ADS)

Lee, Chia-Yu; Lan, Yu-Pin; Tu, Po-Min; Hsu, Shih-Chieh; Lin, Chien-Chung; Kuo, Hao-Chung; Chi, Gou-Chung; Chang, Chun-Yen

2014-04-01

Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical light-emitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to 1 × 108 cm-2. Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved.

Characterization and device applications of ZnO films deposited by high power impulse magnetron sputtering (HiPIMS)

NASA Astrophysics Data System (ADS)

Partridge, J. G.; Mayes, E. L. H.; McDougall, N. L.; Bilek, M. M. M.; McCulloch, D. G.

2013-04-01

ZnO films have been reactively deposited on sapphire substrates at 300 °C using a high impulse power magnetron sputtering deposition system and characterized structurally, optically and electronically. The unintentionally doped n-type ZnO films exhibit high transparency, moderate carrier concentration (˜5 × 1018 cm-3) and a Hall mobility of 8.0 cm2 V-1 s-1, making them suitable for electronic device applications. Pt/ZnO Schottky diodes formed on the HiPIMS deposited ZnO exhibited rectification ratios up to 104 at ±2 V and sensitivity to UV light.

GaP betavoltaic cells as a power source

NASA Technical Reports Server (NTRS)

Pool, F. S.; Stella, Paul M.; Anspaugh, B.

1991-01-01

Maximum power output for the GaP cells of this study was found to be on the order of 1 microW. This resulted from exposure to 200 and 40 KeV electrons at a flux of 2 x 10(exp 9) electrons/sq cm/s, equivalent to a 54 mCurie source. The efficiencies of the cells ranged from 5 to 9 percent for 200 and 40 KeV electrons respectively. The lower efficiency at higher energy is due to a substantial fraction of energy deposition in the substrate, further than a diffusion length from the depletion region of the cell. Radiation damage was clearly observed in GaP after exposure to 200 KeV electrons at a fluence of 2 x 10(exp 12) electrons/sq cm. No discernable damage was observed after exposure to 40 KeV electrons at the same fluence. Analysis indicates that a GaP betavoltaic system would not be practical if limited to low energy beta sources. The power available would be too low even in the ideal case. By utilizing high activity beta sources, such as Sr-90/Y-90, it may be possible to achieve performance that could be suitable for some space power applications. However, to utilize such a source the problem of radiation damage in the beta cell material must be overcome.

Ultralight Cut-Paper-Based Self-Charging Power Unit for Self-Powered Portable Electronic and Medical Systems.

PubMed

Guo, Hengyu; Yeh, Min-Hsin; Zi, Yunlong; Wen, Zhen; Chen, Jie; Liu, Guanlin; Hu, Chenguo; Wang, Zhong Lin

2017-05-23

The development of lightweight, superportable, and sustainable power sources has become an urgent need for most modern personal electronics. Here, we report a cut-paper-based self-charging power unit (PC-SCPU) that is capable of simultaneously harvesting and storing energy from body movement by combining a paper-based triboelectric nanogenerator (TENG) and a supercapacitor (SC), respectively. Utilizing the paper as the substrate with an assembled cut-paper architecture, an ultralight rhombic-shaped TENG is achieved with highly specific mass/volume charge output (82 nC g -1 /75 nC cm -3 ) compared with the traditional acrylic-based TENG (5.7 nC g -1 /5.8 nC cm -3 ), which can effectively charge the SC (∼1 mF) to ∼1 V in minutes. This wallet-contained PC-SCPU is then demonstrated as a sustainable power source for driving wearable and portable electronic devices such as a wireless remote control, electric watch, or temperature sensor. This study presents a potential paper-based portable SCPU for practical and medical applications.

Electricity from methane by reversing methanogenesis

PubMed Central

McAnulty, Michael J.; G. Poosarla, Venkata; Kim, Kyoung-Yeol; Jasso-Chávez, Ricardo; Logan, Bruce E.; Wood, Thomas K.

2017-01-01

Given our vast methane reserves and the difficulty in transporting methane without substantial leaks, the conversion of methane directly into electricity would be beneficial. Microbial fuel cells harness electrical power from a wide variety of substrates through biological means; however, the greenhouse gas methane has not been used with much success previously as a substrate in microbial fuel cells to generate electrical current. Here we construct a synthetic consortium consisting of: (i) an engineered archaeal strain to produce methyl-coenzyme M reductase from unculturable anaerobic methanotrophs for capturing methane and secreting acetate; (ii) micro-organisms from methane-acclimated sludge (including Paracoccus denitrificans) to facilitate electron transfer by providing electron shuttles (confirmed by replacing the sludge with humic acids), and (iii) Geobacter sulfurreducens to produce electrons from acetate, to create a microbial fuel cell that converts methane directly into significant electrical current. Notably, this methane microbial fuel cell operates at high Coulombic efficiency. PMID:28513579

Electricity from methane by reversing methanogenesis

NASA Astrophysics Data System (ADS)

McAnulty, Michael J.; G. Poosarla, Venkata; Kim, Kyoung-Yeol; Jasso-Chávez, Ricardo; Logan, Bruce E.; Wood, Thomas K.

2017-05-01

Given our vast methane reserves and the difficulty in transporting methane without substantial leaks, the conversion of methane directly into electricity would be beneficial. Microbial fuel cells harness electrical power from a wide variety of substrates through biological means; however, the greenhouse gas methane has not been used with much success previously as a substrate in microbial fuel cells to generate electrical current. Here we construct a synthetic consortium consisting of: (i) an engineered archaeal strain to produce methyl-coenzyme M reductase from unculturable anaerobic methanotrophs for capturing methane and secreting acetate; (ii) micro-organisms from methane-acclimated sludge (including Paracoccus denitrificans) to facilitate electron transfer by providing electron shuttles (confirmed by replacing the sludge with humic acids), and (iii) Geobacter sulfurreducens to produce electrons from acetate, to create a microbial fuel cell that converts methane directly into significant electrical current. Notably, this methane microbial fuel cell operates at high Coulombic efficiency.

Stabilized chromium oxide film

DOEpatents

Nyaiesh, A.R.; Garwin, E.L.

1986-08-04

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Stabilized chromium oxide film

DOEpatents

Garwin, Edward L.; Nyaiesh, Ali R.

1988-01-01

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Remote Joule heating by a carbon nanotube.

PubMed

Baloch, Kamal H; Voskanian, Norvik; Bronsgeest, Merijntje; Cumings, John

2012-04-08

Minimizing Joule heating remains an important goal in the design of electronic devices. The prevailing model of Joule heating relies on a simple semiclassical picture in which electrons collide with the atoms of a conductor, generating heat locally and only in regions of non-zero current density, and this model has been supported by most experiments. Recently, however, it has been predicted that electric currents in graphene and carbon nanotubes can couple to the vibrational modes of a neighbouring material, heating it remotely. Here, we use in situ electron thermal microscopy to detect the remote Joule heating of a silicon nitride substrate by a single multiwalled carbon nanotube. At least 84% of the electrical power supplied to the nanotube is dissipated directly into the substrate, rather than in the nanotube itself. Although it has different physical origins, this phenomenon is reminiscent of induction heating or microwave dielectric heating. Such an ability to dissipate waste energy remotely could lead to improved thermal management in electronic devices.

Remote Joule heating by a carbon nanotube

NASA Astrophysics Data System (ADS)

Baloch, Kamal H.; Voskanian, Norvik; Bronsgeest, Merijntje; Cumings, John

2012-05-01

Minimizing Joule heating remains an important goal in the design of electronic devices. The prevailing model of Joule heating relies on a simple semiclassical picture in which electrons collide with the atoms of a conductor, generating heat locally and only in regions of non-zero current density, and this model has been supported by most experiments. Recently, however, it has been predicted that electric currents in graphene and carbon nanotubes can couple to the vibrational modes of a neighbouring material, heating it remotely. Here, we use in situ electron thermal microscopy to detect the remote Joule heating of a silicon nitride substrate by a single multiwalled carbon nanotube. At least 84% of the electrical power supplied to the nanotube is dissipated directly into the substrate, rather than in the nanotube itself. Although it has different physical origins, this phenomenon is reminiscent of induction heating or microwave dielectric heating. Such an ability to dissipate waste energy remotely could lead to improved thermal management in electronic devices.

Graphene revisited: From orbital mapping to its impact as a substrate

NASA Astrophysics Data System (ADS)

Draxl, Claudia

Graphene, the material of the 21st century, is without doubt one of the best characterized solids. Despite the enormous amount of investigations and related publications, it still it offers a variety of exciting aspects to explore, in particular in view of its excitations. Combining density-functional theory with many-body perturbation theory, as implemented in the all-electron full-potential package exciting, provides a powerful framework for this purpose. (i) The first example concerns the question, whether we can ``see'' orbitals in an electron microscope. Indeed, transmission electron microscopy can be used for mapping atomic orbitals, as demonstrated recently by a first-principles approach. For defected graphene, exhibiting either an isolated vacancy or a substitutional nitrogen atom different kinds of images are to be expected, depending on the orbital character. (ii) Graphene/BN heterostructures absorb light over a broad frequency range, from the near-infrared to the ultraviolet region, exhibiting novel features induced by the stacking. Peculiar features of their excitations are inter-layer excitons that can be modulated upon layer patterning. By choosing the stacking arrangement, the electronic coupling between the individual components can be tuned to enhance light-matter interaction. (iii) As demonstrated for azobenzene monolayers, graphene as a substrate strongly impacts the photo-switching behavior of molecules. Despite the weak hybridization, the photo-absorption of the molecules is remarkably modulated. While substrate polarization reduces the band-gap of the adsorbate, enhanced dielectric screening weakens the attractive interaction between electrons and holes. Furthermore, excitations corresponding to intermolecular electron-hole pairs, which are dark in the isolated monolayers, are activated by the presence of the substrate. (iv) Finally, we ask how first- and second-order Raman spectra of graphene are affected by strain that may be induced by an underlying substrate. Support from the DFG and the FWF is appreciated.

Dilution effect on the formation of amorphous phase in the laser cladded Ni-Fe-B-Si-Nb coatings after laser remelting process

NASA Astrophysics Data System (ADS)

Li, Ruifeng; Li, Zhuguo; Huang, Jian; Zhu, Yanyan

2012-08-01

Ni-Fe-B-Si-Nb coatings have been deposited on mild steel substrates using high power diode laser cladding. Scanning laser beam at high speeds was followed to remelt the surface of the coatings. Different laser cladding powers in the range of 700-1000 W were used to obtain various dilution ratios in the coating. The dilution effect on the chemical characterization, phase composition and microstructure is analyzed by energy dispersive spectroscopy, X-ray diffraction and scanning-electron microscopy. The microhardness distribution of the coatings after laser processing is also measured. The results reveal that Ni-based amorphous composite coatings have successfully been fabricated on mild steel substrate at low dilution ratio when the cladding power was 700 W, 800 W and 900 W. While at high laser power of 1000 W, no amorphous phase was found. The coatings with low dilution ratio exhibit the highest microhardness of 1200 HV0.5 due to their largest volume fraction of amorphous phase.

Advanced Power Electronics Components

NASA Technical Reports Server (NTRS)

Schwarze, Gene E.

2004-01-01

This paper will give a description and status of the Advanced Power Electronics Materials and Components Technology program being conducted by the NASA Glenn Research Center for future aerospace power applications. The focus of this research program is on the following: 1) New and/or significantly improved dielectric materials for the development of power capacitors with increased volumetric efficiency, energy density, and operating temperature. Materials being investigated include nanocrystalline and composite ceramic dielectrics and diamond-like carbon films; 2) New and/or significantly improved high frequency, high temperature, low loss soft magnetic materials for the development of transformers/inductors with increased power/energy density, electrical efficiency, and operating temperature. Materials being investigated include nanocrystalline and nanocomposite soft magnetic materials; 3) Packaged high temperature, high power density, high voltage, and low loss SiC diodes and switches. Development of high quality 4H- and 6H- SiC atomically smooth substrates to significantly improve device performance is a major emphasis of the SiC materials program; 4) Demonstration of high temperature (> 200 C) circuits using the components developed above.

Diamond-based heat spreaders for power electronic packaging applications

NASA Astrophysics Data System (ADS)

Guillemet, Thomas

As any semiconductor-based devices, power electronic packages are driven by the constant increase of operating speed (higher frequency), integration level (higher power), and decrease in feature size (higher packing density). Although research and innovation efforts have kept these trends continuous for now more than fifty years, the electronic packaging technology is currently facing a challenge that must be addressed in order to move toward any further improvements in terms of performances or miniaturization: thermal management. Thermal issues in high-power packages strongly affect their reliability and lifetime and have now become one of the major limiting factors of power modules development. Thus, there is a strong need for materials that can sustain higher heat flux levels while safely integrating into the electronic package architecture. In such context, diamond is an attractive candidate because of its outstanding thermal conductivity, low thermal expansion, and high electrical resistivity. Its low heat capacity relative to metals such as aluminum or copper makes it however preferable for heat spreading applications (as a heat-spreader) rather than for dissipating the heat flux itself (as a heat sink). In this study, a dual diamond-based heat-spreading solution is proposed. Polycrystalline diamond films were grown through laser-assisted combustion synthesis on electronic substrates (in the U.S) while, in parallel, diamond-reinforced copper-matrix composite films were fabricated through tape casting and hot pressing (in France). These two types of diamond-based heat-spreading films were characterized and their microstructure and chemical composition were related to their thermal performances. Particular emphasize was put on the influence of interfaces on the thermal properties of the materials, either inside a single material (grain boundaries) or between dissimilar materials (film/substrate interface, matrix/reinforcement interface). Finally, the packaging potential of the two heat-spreading solutions invoked was evaluated. This study was carried out within the framework of a French-American collaboration between the Electrical Engineering department of the University of Nebraska-Lincoln (United States, U.S.) and the Institute of Condensed Matter Chemistry of the University of Bordeaux (France). This study was financed by the Office of Naval Research in the U.S., and by the Region Aquitaine in France.

Self-powered textile for wearable electronics by hybridizing fiber-shaped nanogenerators, solar cells, and supercapacitors.

PubMed

Wen, Zhen; Yeh, Min-Hsin; Guo, Hengyu; Wang, Jie; Zi, Yunlong; Xu, Weidong; Deng, Jianan; Zhu, Lei; Wang, Xin; Hu, Chenguo; Zhu, Liping; Sun, Xuhui; Wang, Zhong Lin

2016-10-01

Wearable electronics fabricated on lightweight and flexible substrate are believed to have great potential for portable devices, but their applications are limited by the life span of their batteries. We propose a hybridized self-charging power textile system with the aim of simultaneously collecting outdoor sunshine and random body motion energies and then storing them in an energy storage unit. Both of the harvested energies can be easily converted into electricity by using fiber-shaped dye-sensitized solar cells (for solar energy) and fiber-shaped triboelectric nanogenerators (for random body motion energy) and then further stored as chemical energy in fiber-shaped supercapacitors. Because of the all-fiber-shaped structure of the entire system, our proposed hybridized self-charging textile system can be easily woven into electronic textiles to fabricate smart clothes to sustainably operate mobile or wearable electronics.

Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces

NASA Astrophysics Data System (ADS)

So, Hongyun; Senesky, Debbie G.

2016-01-01

In this letter, three-dimensional gateless AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with 54% reduction in electrical resistance and 73% increase in surface area compared with conventional gateless HEMTs on planar substrates. Inverted pyramidal AlGaN/GaN surfaces were microfabricated using potassium hydroxide etched silicon with exposed (111) surfaces and metal-organic chemical vapor deposition of coherent AlGaN/GaN thin films. In addition, electrical characterization of the devices showed that a combination of series and parallel connections of the highly conductive two-dimensional electron gas along the pyramidal geometry resulted in a significant reduction in electrical resistance at both room and high temperatures (up to 300 °C). This three-dimensional HEMT architecture can be leveraged to realize low-power and reliable power electronics, as well as harsh environment sensors with increased surface area.

High Temperature Solar Reflector, Its Preparation and Use

NASA Technical Reports Server (NTRS)

Jaworske, Donald A. (Inventor)

1999-01-01

A coating-substrate combination having high specular reflectivity at high temperatures reaching 8000 C in a vacuum is described. The substrate comprises pure nickel metal or a nickel-containing metal alloy such as stainless steel having a highly polished reflective surface. The coating is a layer of silver deposited on the substrate to a thickness of 300 A to 3000 A. A 300 A to 5000 A protective coating of silica, alumina or magnesium fluoride is used to cover the silver and to protect it from oxidation. The combination is useful as a parabolic shaped secondary concentrator for collecting solar radiation for generating power or thermal energy for satellite uses. The reflective layer and protective coating preferably are applied to the reflective surface of the substrate by electron beam evaporation or by ion sputtering.

Laser cutting of ultra-thin glasses based on a nonlinear laser interaction effect

NASA Astrophysics Data System (ADS)

Chen, Jian; Wu, Zhouling

2013-07-01

Glass panel substrates have been widely used in consumer electronics such as in flat panel TVs, laptops, and cell phones. With the advancement in the industry, the glass substrates are becoming thinner and stronger for reduced weight and volume, which brings great challenges for traditional mechanical processes in terms of cut quality, yield, and throughput. Laser glass cutting provides a non-contact process with minimum impact and superior quality compared to the mechanical counterparts. In this paper, we presented recent progresses in advanced laser processing of ultra-thin glass substrates, especially laser-cutting of ultra-thin glasses by a high power laser through a nonlinear interaction effect. Our results indicate that this technique has great potential of application for mass production of ultra-thin glass substrates.

Self-powered gustation electronic skin for mimicking taste buds based on piezoelectric-enzymatic reaction coupling process

NASA Astrophysics Data System (ADS)

Zhao, Tianming; Fu, Yongming; He, Haoxuan; Dong, Chuanyi; Zhang, Linlin; Zeng, Hui; Xing, Lili; Xue, Xinyu

2018-02-01

A new self-powered wearable gustation electronic skin for mimicking taste buds has been realized based on enzyme-modified/ZnO nanowire arrays on patterned-electrode flexible substrate. The e-skin can actively taste beverages or fruits without any external electric power. Through the piezoelectric-enzymatic reaction coupling effect, the nanowires can harvest the mechanical energy of body movement and output piezoelectric signal. The piezoelectric output is significantly dependent on the concentration of target analyte. The response for detecting 2 × 10-2 M ascorbic acid (ascorbate acid oxidase@ZnO) is up to 171.747, and the selectivity is high. The response for detecting 50% alcohol (alcohol oxidase@ZnO) is up to 45.867. Our results provide a new research direction for the development of multifunctional e-skin and expand the study scope for self-powered bionic systems.

Note: long-range scanning tunneling microscope for the study of nanostructures on insulating substrates.

PubMed

Molina-Mendoza, Aday J; Rodrigo, José G; Island, Joshua; Burzuri, Enrique; Rubio-Bollinger, Gabino; van der Zant, Herre S J; Agraït, Nicolás

2014-02-01

The scanning tunneling microscope (STM) is a powerful tool for studying the electronic properties at the atomic level, however, it is of relatively small scanning range and the fact that it can only operate on conducting samples prevents its application to study heterogeneous samples consisting of conducting and insulating regions. Here we present a long-range scanning tunneling microscope capable of detecting conducting micro and nanostructures on insulating substrates using a technique based on the capacitance between the tip and the sample and performing STM studies.

Prediction and Measurement of Temperature Fields in Silicon-on-Insulator Electronic Circuits

DTIC Science & Technology

1995-08-01

common dimensions are given in Table 1. Almost all of the device power is dissipated in the channel. The electri- cally insulating implanted layer...data. Region or Component substrate Material SOI implanted insulating layers single-crystal silicon, 3 x 1015 boron atoms cm -3 Thermal... implanted silicon-dioxide layer in SOI wafers. The data for each device for varying powers fall near a line originating at P = 0 and T0 = 303 K

Molecular dynamics simulation of Coulomb explosion, melting and shock wave creation in silicon after an ionization pulse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Zhongyu; Shao, Lin, E-mail: lshao@tamu.edu; Chen, Di

Strong electronic stopping power of swift ions in a semiconducting or insulating substrate can lead to localized electron stripping. The subsequent repulsive interactions among charged target atoms can cause Coulomb explosion. Using molecular dynamics simulation, we simulate Coulomb explosion in silicon by introducing an ionization pulse lasting for different periods, and at different substrate temperatures. We find that the longer the pulse period, the larger the melting radius. The observation can be explained by a critical energy density model assuming that melting required thermal energy density is a constant value and the total thermal energy gained from Coulomb explosion ismore » linearly proportional to the ionization period. Our studies also show that melting radius is larger at higher substrate temperatures. The temperature effect is explained due to a longer structural relaxation above the melting temperature at original ionization boundary due to lower heat dissipation rates. Furthermore, simulations show the formation of shock waves, created due to the compression from the melting core.« less

Tapered-Wiggler Free-Electron Laser Oscillator Program.

DTIC Science & Technology

1984-05-01

16 ) are usually ruled in substrates of pyrex or copper (for infrared applications). Typical CW S damage levels at 2.06 /lm wavelength are 10 XW/cm 2...degradation limit WW2 ; 2r/.D, (1) where r is either the average power or single-pulse integrated energy exposure within the cavity, whichever is

Development of CVD-W coatings on CuCrZr and graphite substrates with a PVD intermediate layer

NASA Astrophysics Data System (ADS)

Song, Jiupeng; Lian, Youyun; Lv, Yanwei; Liu, Junyong; Yu, Yang; Liu, Xiang; Yan, Binyou; Chen, Zhigang; Zhuang, Zhigang; Zhao, Ximeng; Qi, Yang

2014-12-01

In order to apply tungsten (W) coatings by chemical vapor deposition (CVD) for repairing or updating the plasma facing components (PFCs) of the first wall and divertor in existing or future tokomaks, where CuCrZr or graphite is the substrate material, an intermediate layer by physical vapor deposition (PVD) has been used to accommodate the interface stress due to the mismatch of thermal expansion or act as a diffusion barrier between the CVD-W coating and the substrate. The prepared CuCrZr/PVD-Cu/CVD-W sample with active cooling has passed thermal fatigue tests by electron beam with an absorbed power of 2.2 MW/m2, 50 s on/50 s off, for 100 cycles. Another graphite/PVD-Si/CVD-W sample without active cooling underwent thermal fatigue testing with an absorbed power density of 4.62 MW/m2, 5 s on/25 s off, for 200 cycles, and no catastrophic failure was found.

High-current electron gun with a planar magnetron integrated with an explosive-emission cathode

NASA Astrophysics Data System (ADS)

Kiziridi, P. P.; Ozur, G. E.

2017-05-01

A new high-current electron gun with plasma anode and explosive-emission cathode integrated with planar pulsed powered magnetron is described. Five hundred twelve copper wires 1 mm in diameter and 15 mm in height serve as emitters. These emitters are installed on stainless steel disc (substrate) with 3-mm distance between them. Magnetron discharge plasma provides increased ion density on the periphery of plasma anode formed by high-current Penning discharge ignited within several milliseconds after starting of the magnetron discharge. The increased on the periphery ion density improves the uniformity of high-current electron beam produced in such an electron gun.

AC power generation from microbial fuel cells

NASA Astrophysics Data System (ADS)

Lobo, Fernanda Leite; Wang, Heming; Forrestal, Casey; Ren, Zhiyong Jason

2015-11-01

Microbial fuel cells (MFCs) directly convert biodegradable substrates to electricity and carry good potential for energy-positive wastewater treatment. However, the low and direct current (DC) output from MFC is not usable for general electronics except small sensors, yet commercial DC-AC converters or inverters used in solar systems cannot be directly applied to MFCs. This study presents a new DC-AC converter system for MFCs that can generate alternating voltage in any desired frequency. Results show that AC power can be easily achieved in three different frequencies tested (1, 10, 60 Hz), and no energy storage layer such as capacitors was needed. The DC-AC converter efficiency was higher than 95% when powered by either individual MFCs or simple MFC stacks. Total harmonic distortion (THD) was used to investigate the quality of the energy, and it showed that the energy could be directly usable for linear electronic loads. This study shows that through electrical conversion MFCs can be potentially used in household electronics for decentralized off-grid communities.

Vertical GaN Devices for Power Electronics in Extreme Environments

DTIC Science & Technology

2016-03-31

electronics applications. In this paper vertical p-n diodes and transistors fabricated on pseudo bulk low defect density (104 to 106 cm-2) GaN substrates are...holes in p-GaN has deleterious effect on p-n junction behavior (Fig. 2), p-GaN contacts, and channel control in junction field-effect transistors at...and transistors ) utilizing p-n junctions are suitable for most practical applications including automotive (210K < T < 423K) but may have limitations

Action mechanism of tyrosinase on meta- and para-hydroxylated monophenols.

PubMed

Fenoll, L G; Rodríguez-López, J N; Varón, R; García-Ruiz, P A; García-Cánovas, F; Tudela, J

2000-04-01

The relationship between the structure and activity of meta- and para-hydroxylated monophenols was studied during their tyrosinase-catalysed hydroxylation and the rate-limiting steps of the reaction mechanism were identified. The para-hydroxylated substrates permit us to study the effect of a substituent (R) in the carbon-1 position (C-1) of the benzene ring on the nucleophilic attack step, while the meta group permits a similar study of the effect on the electrophilic attack step. Substrates with a -OCH3 group on C-1, as p-hydroxyanisol (4HA) and m-hydroxyanisol (3HA), or with a -CH2OH group, as p-hydroxybenzylalcohol (4HBA) and m-hydroxybenzylalcohol (3HBA), were used because the effect of the substituent (R) size was assumed to be similar. However, the electron-donating effect of the -OCH3 group means that the carbon-4 position (C-4) is favoured for nucleophilic attack (para-hydroxylated substrates) or for electrophilic attack (meta-hydroxylated substrates). The electron-attracting effect of the -CH2OH group has the opposite effect, hindering nucleophilic (para) or electrophilic (meta) attack of C-4. The experimental data point to differences between the maximum steady-state rate (V(M)Max) of the different substrates, the value of this parameter depends on the nucleophilic and electrophilic attack. However, differences are greatest in the Michaelis constants (K(M)m), with the meta-hydroxylated substrates having very large values. The catalytic efficiency k(M)cat/K(M)m is much greater for thepara-hydroxylated substrates although it varies greatly between one substrate and the other. However, it varies much less in the meta-hydroxylated substrates since this parameter describes the power of the nucleophilic attack, which is weaker in the meta OH. The large increase in the K(M)m of the meta-hydroxylated substrates might suggest that the phenolic OH takes part in substrate binding. Since this is a weaker nucleophil than the para-hydroxylated substrates, the binding constant decreases, leading to an increase in K(M)m. The catalytic efficiency of tyrosinase on a monophenol (para or meta) is directly related to the nucleophilic power of the oxygen of the phenolic OH. The oxidation step is not limiting since if this were the case, the para and meta substrates would have the same V(M)max. The small difference between the absolute values of V(M)max suggests that the rate constants of the nucleophilic and electrophilic attacks are on the same order of magnitude.

Diffractive optical elements on non-flat substrates using electron beam lithography

NASA Technical Reports Server (NTRS)

Maker, Paul D. (Inventor); Muller, Richard E. (Inventor); Wilson, Daniel W. (Inventor)

2002-01-01

The present disclosure describes a technique for creating diffraction gratings on curved surfaces with electron beam lithography. The curved surface can act as an optical element to produce flat and aberration-free images in imaging spectrometers. In addition, the fabrication technique can modify the power structure of the grating orders so that there is more energy in the first order than for a typical grating. The inventors noticed that by using electron-beam lithography techniques, a variety of convex gratings that are well-suited to the requirements of imaging spectrometers can be manufactured.

Substrate-Directed Catalytic Selective Chemical Reactions.

PubMed

Sawano, Takahiro; Yamamoto, Hisashi

2018-05-04

The development of highly efficient reactions at only the desired position is one of the most important subjects in organic chemistry. Most of the reactions in current organic chemistry are reagent- or catalyst-controlled reactions, and the regio- and stereoselectivity of the reactions are determined by the inherent nature of the reagent or catalyst. In sharp contrast, substrate-directed reaction determines the selectivity of the reactions by the functional group on the substrate and can strictly distinguish sterically and electronically similar multiple reaction sites in the substrate. In this Perspective, three topics of substrate-directed reaction are mainly reviewed: (1) directing group-assisted epoxidation of alkenes, (2) ring-opening reactions of epoxides by various nucleophiles, and (3) catalytic peptide synthesis. Our newly developed synthetic methods with new ligands including hydroxamic acid derived ligands realized not only highly efficient reactions but also pinpointed reactions at the expected position, demonstrating the substrate-directed reaction as a powerful method to achieve the desired regio- and stereoselective functionalization of molecules from different viewpoints of reagent- or catalyst-controlled reactions.

Application of lasers and pulsed power to coating removal

NASA Astrophysics Data System (ADS)

Young, Chris M.; Moeny, William M.; Curry, Randy D.; McDonald, Ken; Bosma, John T.

1995-03-01

Lasers and other pulsed power systems are uniquely suited for removal of coatings from a wide variety of substrates. Coatings which can be removed by these systems include paint, adhesives, epoxies, dips, rust, scale, and bird droppings. Suitable substrates include wood, metal, cloth, stone, ceramic, plastics, and even skin. These systems have the advantage over chemical stripping or mechanical abrasion in that the substrate is left virtually unharmed and in many cases the residue is reduced to a form that is more easily disposed of without toxic byproducts or expensive refurbishment. Furthermore, laser and other pulsed power based systems can be operated using only local containment without the need for special operator protective gear or complete enclosure of the substrate structure. Additional advantages are gained in these systems because they typically combine multiple removal mechanisms for greater effectiveness. For example, pulsed lasers create rapid heating of the coating. This rapid heating can result in chemical breakdown of the coating, thermomechanical stress induced dislocation, shock wave agitation, and physical ablation. This paper presents some of the latest research findings on coating removal using these systems. A comparative survey of the system technology, effectiveness, cost, and application is presented. Also presented is a survey of the commercial potential for the systems. Systems which are presented include lasers (CW, pulsed, Infrared, UV, etc.), flashlamps, electro-cathodic debonders, electron beams, and glow discharges.

GaN Initiative for Grid Applications (GIGA)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Turner, George

2015-07-03

For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -evenmore » for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.« less

Can zinc aluminate-titania composite be an alternative for alumina as microelectronic substrate?

PubMed Central

Roshni, Satheesh Babu; Sebastian, Mailadil Thomas; Surendran, Kuzhichalil Peethambharan

2017-01-01

Alumina, thanks to its superior thermal and dielectric properties, has been the leading substrate over several decades, for power and microelectronics circuits. However, alumina lacks thermal stability since its temperature coefficient of resonant frequency (τf) is far from zero (−60 ppmK−1). The present paper explores the potentiality of a ceramic composite 0.83ZnAl2O4-0.17TiO2 (in moles, abbreviated as ZAT) substrates for electronic applications over other commercially-used alumina-based substrates and synthesized using a non-aqueous tape casting method. The present substrate has τf of + 3.9 ppmK−1 and is a valuable addition to the group of thermo-stable substrates. The ZAT substrate shows a high thermal conductivity of 31.3 Wm−1K−1 (thermal conductivity of alumina is about 24.5 Wm−1K−1), along with promising mechanical, electrical and microwave dielectric properties comparable to that of alumina-based commercial substrates. Furthermore, the newly-developed substrate material shows exceptionally good thermal stability of dielectric constant, which cannot be met with any of the alumina-based HTCC substrates. PMID:28084459

Heteroepitaxial Cu 2O thin film solar cell on metallic substrates

DOE PAGES

Wee, Sung Hun; Huang, Po-Shun; Lee, Jung-Kun; ...

2015-11-06

Heteroepitaxial, single-crystal-like Cu 2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu 2O films on low cost, flexible, textured metallic substrates. Cu 2O films were deposited on the metallic templates via pulsed laser deposition under various processing conditions to study the influence of processing parameters on the structural and electronic properties of the films. It is found that pure, epitaxial Cu 2O phase without any trace of CuO phase is only formed in a limited deposition window of P(Omore » 2) - temperature. The (00l) single-oriented, highly textured, Cu 2O films deposited under optimum P(O 2) - temperature conditions exhibit excellent electronic properties with carrier mobility in the range of 40-60 cm 2 V -1 s -1 and carrier concentration over 10 16 cm -3. The power conversion efficiency of 1.65% is demonstrated from a proof-of-concept Cu 2O solar cell based on epitaxial Cu 2O film prepared on the textured metal substrate.« less

Heteroepitaxial Cu2O thin film solar cell on metallic substrates

PubMed Central

Wee, Sung Hun; Huang, Po-Shun; Lee, Jung-Kun; Goyal, Amit

2015-01-01

Heteroepitaxial, single-crystal-like Cu2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu2O films on low cost, flexible, textured metallic substrates. Cu2O films were deposited on the metallic templates via pulsed laser deposition under various processing conditions to study the influence of processing parameters on the structural and electronic properties of the films. It is found that pure, epitaxial Cu2O phase without any trace of CuO phase is only formed in a limited deposition window of P(O2) - temperature. The (00l) single-oriented, highly textured, Cu2O films deposited under optimum P(O2) - temperature conditions exhibit excellent electronic properties with carrier mobility in the range of 40–60 cm2 V−1 s−1 and carrier concentration over 1016 cm−3. The power conversion efficiency of 1.65% is demonstrated from a proof-of-concept Cu2O solar cell based on epitaxial Cu2O film prepared on the textured metal substrate. PMID:26541499

Method for reworkable packaging of high speed, low electrical parasitic power electronics modules through gate drive integration

DOEpatents

Passmore, Brandon; Cole, Zach; Whitaker, Bret; Barkley, Adam; McNutt, Ty; Lostetter, Alexander

2016-08-02

A multichip power module directly connecting the busboard to a printed-circuit board that is attached to the power substrate enabling extremely low loop inductance for extreme environments such as high temperature operation. Wire bond interconnections are taught from the power die directly to the busboard further enabling enable low parasitic interconnections. Integration of on-board high frequency bus capacitors provide extremely low loop inductance. An extreme environment gate driver board allows close physical proximity of gate driver and power stage to reduce overall volume and reduce impedance in the control circuit. Parallel spring-loaded pin gate driver PCB connections allows a reliable and reworkable power module to gate driver interconnections.

Structural and mechanical characterization of Al/Al2O3 nanotube thin film on TiV alloy

NASA Astrophysics Data System (ADS)

Sarraf, M.; Zalnezhad, E.; Bushroa, A. R.; Hamouda, A. M. S.; Baradaran, S.; Nasiri-Tabrizi, B.; Rafieerad, A. R.

2014-12-01

In this study, the fabrication and characterization of Al/Al2O3 nanotubular arrays on Ti-6Al-4V substrate were carried out. To this end, aluminum thin films were deposited as a first coating layer by direct current (DC) magnetron sputtering with the coating conditions of 300 W, 150 °C and 75 V substrate bias voltage. Al2O3 nanotube array as a second layer was grown on the Al layer by electrochemical anodisation at the constant potential of 20 V within different time periods in an electrolyte solution. For annealing the coated substrates, plasma treatment (PT) technique was utilized under various conditions to get the best adhesion strength of coating to the substrate. To characterize the coating layers, micro scratch test, Vickers hardness and field emission of scanning electron microscopy (FESEM) were used. Results show that after the deposition of pure aluminum on the substrate the scratch length, load and failure point were 794.37 μm, 1100 mN and 411.43 μm, respectively. After PT, the best adhesion strength (2038 mN) was obtained at RF power of 60 W. With the increase of the RF power up to 80 W, a reduction in adhesion strength was observed (1525.22 mN). From the microstructural point of view, a homogenous porous structure with an average pore size of 40-60 nm was formed after the anodisation for 10-45 min. During PT, the porous structure was converted to dense alumina layer when the RF power rose from 40 to 80 W. This led to an increase in hardness value from 2.7 to 3.4 GPa. Based on the obtained data, the RF power of 60 W was the optimum condition for plasma treatment of Al/Al2O3 nanotubular arrays on Ti-6Al-4V substrate.

Performance of epitaxial back surface field cells

NASA Technical Reports Server (NTRS)

Brandhorst, H. W., Jr.; Baraona, C. R.; Swartz, C. K.

1973-01-01

Epitaxial back surface field structures were formed by depositing a 10 micron thick 10 Omega-cm epitaxial silicon layer onto substrates with resistivities of 0.01, 0.1, 1.0 and 10 Omega-cm. A correlation between cell open-circuit voltage and substrate resistivity was observed and was compared to theory. The cells were also irradiated with 1 MeV electrons to a fluence of 5 X 10 to the 15th power e/cm2. The decrease of cell open-circuit voltage was in excellent agreement with theoretical predictions and the measured short circuit currents were within 2% of the prediction. Calculations are presented of optimum cell performance as functions of epitaxial layer thickness, radiation fluence and substrate diffusion length.

Amorphous oxides as electron transport layers in Cu(In,Ga)Se 2 superstrate devices: Amorphous oxides in Cu(In,Ga)Se 2 superstrate devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heinemann, M. D.; van Hest, M. F. A. M.; Contreras, M.

Cu(In,Ga)Se2 (CIGS) solar cells in superstrate configuration promise improved light management and higher stability compared to substrate devices, but they have yet to deliver comparable power conversion efficiencies (PCEs). Chemical reactions between the CIGS layer and the front contact were shown in the past to deteriorate the p-n junction in superstrate devices, which led to lower efficiencies compared to the substrate-type devices. This work aims to solve this problem by identifying a buffer layer between the CIGS layer and the front contact, acting as the electron transport layer, with an optimized electron affinity, doping density and chemical stability. Using combinatorialmore » material exploration we identified amorphous gallium oxide (a-GaOx) as a potentially suitable buffer layer material. The best results were obtained for a-GaOx with an electron affinity that was found to be comparable to that of CIGS. Based on the results of device simulations, it is assumed that detrimental interfacial acceptor states are present at the interface between CIGS and a-GaOx. However, these initial experiments indicate the potential of a-GaOx in this application, and how to reach performance parity with substrate devices, by further increase of its n-type doping density.« less

Particle shape effect on erosion of optical glass substrates due to microparticles

NASA Astrophysics Data System (ADS)

Waxman, Rachel; Gray, Perry; Guven, Ibrahim

2018-03-01

Impact experiments using sand particles and soda lime glass spheres were performed on four distinct glass substrates. Sand particles were characterized using optical and scanning electron microscopy. High-speed video footage from impact tests was used to calculate incoming and rebound velocities of the individual impact events, as well as the particle volume and two-dimensional sphericity. Furthermore, video analysis was used in conjunction with optical and scanning electron microscopy to relate the incoming velocity and particle shape to subsequent fractures, including both radial and lateral cracks. Indentation theory [Marshall et al., J. Am. Ceram. Soc. 65, 561-566 (1982)] was applied and correlated with lateral crack lengths. Multi-variable power law regression was performed, incorporating the particle shape into the model and was shown to have better fit to damage data than the previous indentation model.

Flexible Transparent Supercapacitors Based on Hierarchical Nanocomposite Films.

PubMed

Chen, Fanhong; Wan, Pengbo; Xu, Haijun; Sun, Xiaoming

2017-05-31

Flexible transparent electronic devices have recently gained immense popularity in smart wearable electronics and touch screen devices, which accelerates the development of the portable power sources with reliable flexibility, robust transparency and integration to couple these electronic devices. For potentially coupled as energy storage modules in various flexible, transparent and portable electronics, the flexible transparent supercapacitors are developed and assembled from hierarchical nanocomposite films of reduced graphene oxide (rGO) and aligned polyaniline (PANI) nanoarrays upon their synergistic advantages. The nanocomposite films are fabricated from in situ PANI nanoarrays preparation in a blended solution of aniline monomers and rGO onto the flexible, transparent, and stably conducting film (FTCF) substrate, which is obtained by coating silver nanowires (Ag NWs) layer with Meyer rod and then coating of rGO layer on polyethylene terephthalate (PET) substrate. Optimization of the transparency, the specific capacitance, and the flexibility resulted in the obtained all-solid state nanocomposite supercapacitors exhibiting enhanced capacitance performance, good cycling stability, excellent flexibility, and superior transparency. It provides promising application prospects for exploiting flexible, low-cost, transparent, and high-performance energy storage devices to be coupled into various flexible, transparent, and wearable electronic devices.

Magnetism of epitaxial Tb films on W(110) studied by spin-polarized low-energy electron microscopy

NASA Astrophysics Data System (ADS)

Prieto, J. E.; Chen, Gong; Schmid, A. K.; de la Figuera, J.

2016-11-01

Thin epitaxial films of Tb metal were grown on a clean W(110) substrate in ultrahigh vacuum and studied in situ by low-energy electron microscopy. Annealed films present magnetic contrast in spin-polarized low-energy electron microscopy. The energy dependence of the electron reflectivity was determined and a maximum value of its spin asymmetry of about 1% was measured. The magnetization direction of the Tb films is in-plane. Upon raising the temperature, no change in the domain distribution is observed, while the asymmetry in the electron reflectivity decreases when approaching the critical temperature, following a power law ˜(1-T /TC) β with a critical exponent β of 0.39.

Amorphous silicon and organic thin film transistors for electronic applications

NASA Astrophysics Data System (ADS)

Zhou, Lisong

Recently, flexible thin film electronics has attracted huge research interest, and as now, many prototypes are being developed and demonstrated by companies around the world, including displays, logic circuit, and solar cells. Flexible electronics offers many potential advantages: it can not only generate new functions like flexible displays or solar cells, also allow very low cost manufacturing through the use of cheap polymeric substrates and roll-to-roll fabrication. a-Si:H TFT fabrications are compatible with flexible polyimide substrate materials. With the interests in the space environment, for the first time, we tested the performance changes of flexible a-Si:H TFTs, on polyimide substrates, due to irradiation and mechanical stress. Significant changes were found on TFTs after irradiation with fast electrons, which, however, was essentially removed by post-irradiation thermal annealing. On the other hand, few changes were found in TFTs by mechanical stress. These preliminary results indicate that it can be readily engineered for space applications. Furthermore, for the first time, we designed and fabricated ungated n+ muC-Si and gated a-Si:H strain sensors on flexible polyimide substrates. Compared with commercial metallic foil strain sensors, ungated muC-Si sensors and gated a-Si:H sensors are two orders of magnitude smaller in area and consume two orders or magnitude less power. Integration with a-Si:H TFTs can also allow large arrays of strain sensors to be fabricated. To take advantage of lower glass-transition-temperature polymeric substrate materials, reduced processing temperature is desired. The 150°C low-temperature deposition process is achieved by using hydrogen dilution in the PECVD process. The TFT performance and bias stability property are tested similar to that of a 250°C process. These results suggest its viability for practical applications. For even lower process temperature, we have considered organic TFTs. As a practical demonstration, we integrated pentacene TFTs with OLEDs in a simple display. Pentacene TFT passivation techniques were researched, and a PVA and parylene bilayer structure was used. We designed and demonstrated 48 x 48-pixel active matrix OTFTOLED displays, and to our best knowledge, they are the largest on glass substrates and the first on flexible PET substrates. Device performance, uniformity and stability are also compared. These results demonstrate that pentacene TFTs are viable candidates for active-matrix OLED displays and other flexible electronics applications.

Multi-junction Thin-film Solar Cells on Flexible Substrates for Space Power

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Smith, Mark; Scofield, John H.; Dickman, John E.; Lush, Gregory B.; Morel, Donald L.; Ferekides, Christos; Dhere, Neelkanth G.

2002-01-01

The ultimate objective of the thin-film program at NASA GRC is development of a 20 percent AM0 thin-film device technology with high power/weight ratio. Several approaches are outlined to improve overall device efficiency and power/weight ratio. One approach involves the use of very lightweight flexible substrates such as polyimides (i.e., Kapton(Trademark)) or metal foil. Also, a compound semiconductor tandem device structure that can meet this objective is proposed and simulated using Analysis of Microelectronic and Photonic Structures (AMPS). AMPS modeling of current devices in tandem format indicate that AM0 efficiencies near 20 percent can be achieved. And with improvements in materials, efficiencies approaching 25 percent are achievable. Several important technical issues need to be resolved to realize these complex devices: development of a wide bandgap material with good electronic properties, development of transparent contacts, and targeting a 2-terminal device structure (with more complicated processing and tunnel junction) or 4-terminal device. Recent progress in the NASA GRC program is outlined.

Analysis of epitaxial drift field N on P silicon solar cells

NASA Technical Reports Server (NTRS)

Baraona, C. R.; Brandhorst, H. W., Jr.

1976-01-01

The performance of epitaxial drift field silicon solar cell structures having a variety of impurity profiles was calculated. These structures consist of a uniformly doped P-type substrate layer, and a P-type epitaxial drift field layer with a variety of field strengths. Several N-layer structures were modeled. A four layer solar cell model was used to calculate efficiency, open circuit voltage and short circuit current. The effect on performance of layer thickness, doping level, and diffusion length was determined. The results show that peak initial efficiency of 18.1% occurs for a drift field thickness of about 30 micron with the doping rising from 10 to the 17th power atoms/cu cm at the edge of the depletion region to 10 to the 18th power atoms/cu cm in the substrate. Stronger drift fields (narrow field regions) allowed very high performance (17% efficiency) even after irradiation to 3x10 to the 14th power 1 MeV electrons/sq cm.

A Carbon-Neutral Photosynthetic Microbial Fuel Cell Powered by Microcystis aeruginosa.

PubMed

Ma, Meirong; Cao, Limin; Chen, Li; Ying, Xiaofang; Deng, Zongwu

2015-07-01

A photosynthetic microbial fuel cell (m-PMFC) is developed for generating electricity by harnessing solar energy using Microcystis aeruginosa. In this m-PMFC, commensal bacteria can consume the nutrients that Microcystis aeruginosa produces to generate electricity so that no net CO₂production occurs. A b-MFC is constructed to confirm the role of commensal bacteria in electric generation. An s-PMFC is constructed to confirm the contribution of Microcystis aeruginosa as substrates. The power outputs of m-PMFCs exhibit no significant difference in terms of different inoculation amount of Microcystis aeruginosa or light/dark cycles. The power density of m-PMFC exhibits similar response to bubbling of N₂and O₂as that of b-MFC, as confirmed by cyclic voltammetry analysis of m-PMFC and b-MFC. Scanning electron microscope images demonstrate that the biofilm of m-PMFC consists mainly of commensal bacteria. These results suggest that commensal bacteria act as the main biocatalysts and Microcystis aeruginosa as the anode substrates in the m-PMFC.

Flexible, transparent and exceptionally high power output nanogenerators based on ultrathin ZnO nanoflakes

NASA Astrophysics Data System (ADS)

van Ngoc, Huynh; Kang, Dae Joon

2016-02-01

Novel nanogenerator structures composed of ZnO nanoflakes of less than 10 nm thickness were fabricated using a novel method involving a facile synthetic route and a rational design. The fabricated nanogenerators exhibited a short-circuit current density of 67 μA cm-2, a peak-to-peak open-circuit voltage of 110 V, and an overall output power density exceeding 1.2 mW cm-2, and to the best of our knowledge, these are the best values that have been reported so far in the literature on ZnO-based nanogenerators. We demonstrated that our nanogenerator design could instantaneously power 20 commercial green light-emitting diodes without any additional energy storage processes. Both the facile synthetic route for the ZnO nanoflakes and the straightforward device fabrication process present great scaling potential in order to power mobile and personal electronics that can be used in smart wearable systems, transparent and flexible devices, implantable telemetric energy receivers, electronic emergency equipment, and other self-powered nano/micro devices.Novel nanogenerator structures composed of ZnO nanoflakes of less than 10 nm thickness were fabricated using a novel method involving a facile synthetic route and a rational design. The fabricated nanogenerators exhibited a short-circuit current density of 67 μA cm-2, a peak-to-peak open-circuit voltage of 110 V, and an overall output power density exceeding 1.2 mW cm-2, and to the best of our knowledge, these are the best values that have been reported so far in the literature on ZnO-based nanogenerators. We demonstrated that our nanogenerator design could instantaneously power 20 commercial green light-emitting diodes without any additional energy storage processes. Both the facile synthetic route for the ZnO nanoflakes and the straightforward device fabrication process present great scaling potential in order to power mobile and personal electronics that can be used in smart wearable systems, transparent and flexible devices, implantable telemetric energy receivers, electronic emergency equipment, and other self-powered nano/micro devices. Electronic supplementary information (ESI) available: FE-SEM images of ZnO NFs grown on textile and FTO/glass substrates, XRD patterns of synthesized ZnO NFs, nitrogen adsorption isotherms for ZnO NWs and ZnO NFs, effect of different coating layers on ZnO NFNGs, P(VDF-TrFE) coating on ZnO NFs, output open-circuit voltages of a textile electrostatic NG based on P(VDF-TrFE) coated on ZnO NFs and a textile ZnO NFNG without an insulating layer generated by a sonic wave, NG-based triboelectric effects and PDMS-coated ZnO NF-based NGs grown on an ITO/PET substrate. See DOI: 10.1039/c5nr08324a

High Packing Density Unidirectional Arrays of Vertically Aligned Graphene with Enhanced Areal Capacitance for High-Power Micro-Supercapacitors.

PubMed

Zheng, Shuanghao; Li, Zhilin; Wu, Zhong-Shuai; Dong, Yanfeng; Zhou, Feng; Wang, Sen; Fu, Qiang; Sun, Chenglin; Guo, Liwei; Bao, Xinhe

2017-04-25

Interfacial integration of a shape-engineered electrode with a strongly bonded current collector is the key for minimizing both ionic and electronic resistance and then developing high-power supercapacitors. Herein, we demonstrated the construction of high-power micro-supercapacitors (VG-MSCs) based on high-density unidirectional arrays of vertically aligned graphene (VG) nanosheets, derived from a thermally decomposed SiC substrate. The as-grown VG arrays showed a standing basal plane orientation grown on a (0001̅) SiC substrate, tailored thickness (3.5-28 μm), high-density structurally ordering alignment of graphene consisting of 1-5 layers, vertically oriented edges, open intersheet channels, high electrical conductivity (192 S cm -1 ), and strong bonding of the VG edges to the SiC substrate. As a result, the demonstrated VG-MSCs displayed a high areal capacitance of ∼7.3 mF cm -2 and a fast frequency response with a short time constant of 9 ms. Furthermore, VG-MSCs in both an aqueous polymer gel electrolyte and nonaqueous ionic liquid of 1-ethyl-3-methylimidazolium tetrafluoroborate operated well at high scan rates of up to 200 V s -1 . More importantly, VG-MSCs offered a high power density of ∼15 W cm -3 in gel electrolyte and ∼61 W cm -3 in ionic liquid. Therefore, this strategy of producing high-density unidirectional VG nanosheets directly bonded on a SiC current collector demonstrated the feasibility of manufacturing high-power compact supercapacitors.

Graphene-Based Integrated Photovoltaic Energy Harvesting/Storage Device.

PubMed

Chien, Chih-Tao; Hiralal, Pritesh; Wang, Di-Yan; Huang, I-Sheng; Chen, Chia-Chun; Chen, Chun-Wei; Amaratunga, Gehan A J

2015-06-24

Energy scavenging has become a fundamental part of ubiquitous sensor networks. Of all the scavenging technologies, solar has the highest power density available. However, the energy source is erratic. Integrating energy conversion and storage devices is a viable route to obtain self-powered electronic systems which have long-term maintenance-free operation. In this work, we demonstrate an integrated-power-sheet, consisting of a string of series connected organic photovoltaic cells (OPCs) and graphene supercapacitors on a single substrate, using graphene as a common platform. This results in lighter and more flexible power packs. Graphene is used in different forms and qualities for different functions. Chemical vapor deposition grown high quality graphene is used as a transparent conductor, while solution exfoliated graphene pastes are used as supercapacitor electrodes. Solution-based coating techniques are used to deposit the separate components onto a single substrate, making the process compatible with roll-to-roll manufacture. Eight series connected OPCs based on poly(3-hexylthiophene)(P3HT):phenyl-C61-butyric acid methyl ester (PC60 BM) bulk-heterojunction cells with aluminum electrodes, resulting in a ≈5 V open-circuit voltage, provide the energy harvesting capability. Supercapacitors based on graphene ink with ≈2.5 mF cm(-2) capacitance provide the energy storage capability. The integrated-power-sheet with photovoltaic (PV) energy harvesting and storage functions had a mass of 0.35 g plus the substrate. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The optimization functions of ICP discharge in preparation of Cu-Zn-Sn precursors and CZTS films by co-evaporation

NASA Astrophysics Data System (ADS)

Ye, Li; Junfang, Chen; Junhui, Ma; Lifen, Zhou

2016-02-01

Cu-Zn-Sn (CZT) precursors were successfully prepared on glass substrate with the introduction of the assistant technology ICP (inductively coupled plasma) based on the conventional co-evaporation process. The deposition was performed with the substrate temperature at 220 °C and the chamber pressure at 6.5 × 10-2 Pa. Argon plasma was investigated with a Langmuir probe. The plasma density and the electron temperature increased with the increasing of the discharge power. The impact of ICP discharge power on the structural and morphological properties of the CZT film were investigated with energy dispersive X-ray spectrometers (EDS), X-ray diffraction (XRD), and scanning electron microscopy (SEM). XRD and EDS were combined to investigate the structure of the film. The results show that Zn loss exists during the evaporation and the loss can be reduced by increasing the ICP discharge power. From the observation on the scanning electron microscope, the grain size becomes larger with argon plasma's assistance. The preparation of the Cu2ZnSnS4 (CZTS) film and the measured properties demonstrate that the ICP would optimize the growth of the film. Project supported by the Natural Science Foundation of Guangdong Province, China (No. S2013010012548), the Natural Science Foundation of Guangdong Province, China (No. 10151063101000048), the Key Program of the National Natural Science Foundation of China (No. 61072028), the Guangdong Provincial Natural Science Foundation of China (No. 2014A030313441), and the Guangdong Province and Chinese Ministry of Education Cooperation Project of Industry, Education and Academy (No. 2013B090600063).

1.6 V nanogenerator for mechanical energy harvesting using PZT nanofibers.

PubMed

Chen, Xi; Xu, Shiyou; Yao, Nan; Shi, Yong

2010-06-09

Energy harvesting technologies that are engineered to miniature sizes, while still increasing the power delivered to wireless electronics, (1, 2) portable devices, stretchable electronics, (3) and implantable biosensors, (4, 5) are strongly desired. Piezoelectric nanowire- and nanofiber-based generators have potential uses for powering such devices through a conversion of mechanical energy into electrical energy. (6) However, the piezoelectric voltage constant of the semiconductor piezoelectric nanowires in the recently reported piezoelectric nanogenerators (7-12) is lower than that of lead zirconate titanate (PZT) nanomaterials. Here we report a piezoelectric nanogenerator based on PZT nanofibers. The PZT nanofibers, with a diameter and length of approximately 60 nm and 500 microm, were aligned on interdigitated electrodes of platinum fine wires and packaged using a soft polymer on a silicon substrate. The measured output voltage and power under periodic stress application to the soft polymer was 1.63 V and 0.03 microW, respectively.

THz generation by laser coupling to carbon nanotube array

NASA Astrophysics Data System (ADS)

Malik, Rakhee; Uma, R.

2018-01-01

A viable scheme of THz radiation generation by beating of two lasers ( ω1 , k→ 1 ; ω2 , k→ 2 ) in a nanotube array, mounted on a dielectric substrate, is proposed and studied. The free electrons of the nanotubes acquire a large oscillatory velocity and experience a beat frequency ponderomotive force that turns nanotubes into oscillating dipole antennae emitting THz radiation. The THz power peaks in directions where a phase difference between fields due to successive nanotubes is integral multiple of 2 π . The THz power is large when the beat frequency equals ωp/√{2 } (where ωp is the electron plasma frequency) and surface plasmon resonance occurs. For our set of laser and carbon nanotube parameters, the generated THz is about 0.1 kW for CO2 laser power of 10 GW and pulse length of a few picoseconds.

Photo-electronic current transport in back-gated graphene transistor

NASA Astrophysics Data System (ADS)

Srivastava, Ashok; Chen, Xinlu; Pradhan, Aswini K.

2017-04-01

In this work, we have studied photo-electronic current transport in a back-gated graphene field-effect transistor. Under the light illumination, band bending at the metal/graphene interface develops a built-in potential which generates photonic current at varying back-gate biases. A typical MOSFET type back-gated transistor structure uses a monolayer graphene as the channel layer formed over the silicon dioxide/silicon substrate. It is shown that the photo-electronic current consists of current contributions from photovoltaic, photo-thermoelectric and photo-bolometric effects. A maximum external responsivity close to 0.0009A/W is achieved at 30μW laser power source and 633nm wavelength.

Creation and Ordering of Oxygen Vacancies at WO 3-δ and Perovskite Interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Kelvin H. L.; Li, Guoqiang; Spurgeon, Steven R.

Changes in structure and composition resulting from oxygen deficiency can strongly impact the physical and chemical properties of transition metal oxides, which may lead to new functionalities for novel electronic devices. Oxygen vacancies (V o) can be readily formed to accomodate the lattice mismatch during epitixial thin film growth. In this paper, the effects of substrate strain and oxidizing power on the creation and distribution of V o in WO 3-δ thin films are investigated in detail. An 18O 2 isotope labeled time-of-flight secondary ion mass spectrometry study reveals that WO 3-δ films grown on SrTiO 3 substrates display amore » significantly larger oxygen vacancy gradient along the growth direction compared to those grown on LaAlO 3 substrates. This result is corroborated by scanning transmission electron microscopy imaging which reveals a large number of defects close to the interface to accommodate interfacial tensile strain, leading to the ordering of V o and the formation of semi-aligned Magnéli phases. The strain is gradually released and tetragonal phase with much better crystallinity is observed at the film/vacuum interface. The changes in structure resulting from oxygen defect creation are shown to have a direct impact on the electronic and optical properties of the films.« less

Optical and electrical properties of GaN-based light emitting diodes grown on micro- and nano-scale patterned Si substrate

NASA Astrophysics Data System (ADS)

Chiu, Ching-Hsueh; Lin, Chien-Chung; Deng, Dongmei; Kuo, Hao-Chung; Lau, Kei-May

2011-10-01

We investigate the optical and electrical characteristics of the GaN-based light emitting diodes (LEDs) grown on Micro and Nano-scale Patterned silicon substrate (MPLEDs and NPLEDs). The transmission electron microscopy (TEM) images reveal the suppression of threading dislocation density in InGaN/GaN structure on nano-pattern substrate due to nanoscale epitaxial lateral overgrowth (NELOG). The plan-view and cross-section cathodoluminescence (CL) mappings show less defective and more homogeneous active quantum well region growth on nano-porous substrates. From temperature dependent photoluminescence (PL) and low temperature time-resolved photoluminescence (TRPL) measurement, NPLEDs has better carrier confinement and higher radiative recombination rate than MPLEDs. In terms of device performance, NPLEDs exhibits smaller electroluminescence (EL) peak wavelength blue shift, lower reverse leakage current and decreases efficiency droop compared with the MPLEDs. These results suggest the feasibility of using NPSi for the growth of high quality and power LEDs on Si substrates.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Chun-Lan; Yuan, Hongtao; Li, Yanbin

Electric-double-layer (EDL) gating with liquid electrolyte has been a powerful tool widely used to explore emerging interfacial electronic phenomena. Due to the large EDL capacitance, a high carrier density up to 10 14 cm –2 can be induced, directly leading to the realization of field-induced insulator to metal (or superconductor) transition. However, the liquid nature of the electrolyte has created technical issues including possible side electrochemical reactions or intercalation, and the potential for huge strain at the interface during cooling. In addition, the liquid coverage of active devices also makes many surface characterizations and in situ measurements challenging. Here, wemore » demonstrate an all solid-state EDL device based on a solid superionic conductor LaF 3, which can be used as both a substrate and a fluorine ionic gate dielectric to achieve a wide tunability of carrier density without the issues of strain or electrochemical reactions and can expose the active device surface for external access. Based on LaF 3 EDL transistors (EDLTs), we observe the metal–insulator transition in MoS 2. Interestingly, the well-defined crystal lattice provides a more uniform potential distribution in the substrate, resulting in less interface electron scattering and therefore a higher mobility in MoS 2 transistors. Finally, this result shows the powerful gating capability of LaF 3 solid electrolyte for new possibilities of novel interfacial electronic phenomena.« less

Woven electronics: a new perspective for wearable technology.

PubMed

Locci, Simone; Maccioni, Maurizio; Orgiu, Emanuele; Bonfiglio, Annalisa

2007-01-01

Endowing a textile substrate (i.e. fibers, yarns, fabrics) with active functions is a new powerful concept, that has recently given rise to several interesting contributions. In this paper, we will describe a possible approach to this intriguing objective, focusing on the technology and on the electronic model. Future applications for this technology will allow to obtain, for instance, matrices of sensors assembled by textile technology and will ensure to obtain for wearable devices the necessary properties of drapability and conformity to the body that are required for these applications.

Electron transport in erbium arsenide:indium gallium(aluminum)arsenide metal/semiconductor nanocomposites for thermoelectric power generation

NASA Astrophysics Data System (ADS)

Bahk, Je-Hyeong

Electron transport in thin film ErAs:InGa(Al)As metal/semiconductor nanocomposite materials grown by molecular beam epitaxy is investigated experimentally and theoretically for efficient thermoelectric power generation. Thermoelectric properties such as the Seebeck coefficient, the electrical conductivity, and the thermal conductivity are measured for the various compositions of the material up to 840 K. A special sample preparation method is proposed to protect the thin films from damage and/or decomposition, and prevent the parasitic substrate conduction effect during the high temperature measurements. The sample preparation method includes surface passivation, high temperature metallization with a diffusion barrier, and the covalent oxide bonding technique for substrate removal. The experimental results for the nanocomposite materials are analyzed using the Boltzmann transport equation under the relaxation time approximation. The scattering characteristics of free electrons in the InGa(Al)As is defined by four major scattering mechanisms such as the polar optical phonon scattering, the ionized impurity scattering, the alloy scattering, and the acoustic phonon deformation potential scattering. Combining these scattering mechanisms, the electron transport model successfully fits the temperature-dependent thermoelectric properties of Si-doped InGaAlAs materials, and predicts the figure of merits at various doping levels in various Al compositions. The nanoparticle-electron interaction is modeled as a momentum scattering for free electrons caused by the electrostatic potential perturbation around nanoparticles and the band offset at the interface. The ErAs nanoparticles are assumed to be semi-metals that can donate electrons to the matrix, and positively charged after the charge transfer to build up the screened coulomb potential outside them. The nanoparticle scattering rate is calculated for this potential profile using the partial wave method, and used to analyze the enhancement of the Seebeck coefficient. Finally, the experimental results for the various compositions of the ErAs:InGa(Al)As nanocomposites are fit using the electron transport model and the nanoparticle scattering. It is shown that nanoparticle scattering can enhance the power factor via energy-dependent electron scattering in ErAs:InGaAs system. The figure of merit for the 0.6% ErAs:(InGaAs)0.8(InAlAs) 0.2 lattice matched to InP is measured to be 1.3 at 800 K, and the theory predicts that it can reach 1.9 at 1000 K.

Strained InGaAs/InAlAs Quantum Wells for Complementary III-V Transistors

DTIC Science & Technology

2014-01-01

GaAs substrates for low power and high frequency applications, J. Appl. Phys. 109 (2011) 033706. [28] A. Ali, H. Madan , A. Agrawal, I. Ramirez, R...Growth of InAsSb-channel high electron mobility transistor structures, J. Vac. Sci. Technol. B 23 (2005) 1441–1444. [30] A. Ali, H. Madan , M.J

Co removal and phase transformations during high power diode laser irradiation of cemented carbide

NASA Astrophysics Data System (ADS)

Barletta, M.; Rubino, G.; Gisario, A.

2011-02-01

The use of a continuous wave-high power diode laser for removing surface Co-binder from Co-cemented tungsten carbide (WC-Co (5.8 wt%.)) hardmetal slabs was investigated. Combined scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction analyses were performed in order to study the phase transformations and micro-structural modifications of the WC-Co substrates occurring during and after laser irradiation. The micro-structure of the WC-Co progressively transforms as energy density increased, exhibiting stronger removal of Co and WC grain growth. At very high energy density, local melting of the WC grains with the formation of big agglomerates of interlaced grains is observed, and the crystalline structure of the irradiated substrate shows the presence of a brittle ternary eutectic phase of W, Co and C (often referred to as the η-phase). The latter can be detrimental to the mechanical properties of WC-Co. Therefore, the proper adjustment of the laser processing parameters plays a crucial role in surface treatments of WC-Co substrates prior to post-processing like diamond deposition.

Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics.

PubMed

Mánuel, J M; Jiménez, J J; Morales, F M; Lacroix, B; Santos, A J; García, R; Blanco, E; Domínguez, M; Ramírez, M; Beltrán, A M; Alexandrov, D; Tot, J; Dubreuil, R; Videkov, V; Andreev, S; Tzaneva, B; Bartsch, H; Breiling, J; Pezoldt, J; Fischer, M; Müller, J

2018-05-02

This work presents results in the field of advanced substrate solutions in order to achieve high crystalline quality group-III nitrides based heterostructures for high frequency and power devices or for sensor applications. With that objective, Low Temperature Co-fired Ceramics has been used, as a non-crystalline substrate. Structures like these have never been developed before, and for economic reasons will represent a groundbreaking material in these fields of Electronic. In this sense, the report presents the characterization through various techniques of three series of specimens where GaN was deposited on this ceramic composite, using different buffer layers, and a singular metal-organic chemical vapor deposition related technique for low temperature deposition. Other single crystalline ceramic-based templates were also utilized as substrate materials, for comparison purposes.

High free carrier concentration in p-GaN grown on AlN substrates

NASA Astrophysics Data System (ADS)

Sarkar, Biplab; Mita, Seiji; Reddy, Pramod; Klump, Andrew; Kaess, Felix; Tweedie, James; Bryan, Isaac; Bryan, Zachary; Kirste, Ronny; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

2017-07-01

A high free hole concentration in III-nitrides is important for next generation optoelectronic and high power electronic devices. The free hole concentration exceeding 1018 cm-3 and resistivity as low as 0.7 Ω cm are reported for p-GaN layers grown by metalorganic vapor phase epitaxy on single crystal AlN substrates. Temperature dependent Hall measurements confirmed a much lower activation energy, 60-80 mV, for p-GaN grown on AlN as compared to sapphire substrates; the lowering of the activation energy was due to screening of Coulomb potential by free carriers. It is also shown that a higher doping density (more than 5 × 1019 cm-3) can be achieved in p-GaN/AlN without the onset of self-compensation.

A global plasma model for reactive deposition of compound films by modulated pulsed power magnetron sputtering discharges

NASA Astrophysics Data System (ADS)

Zheng, B. C.; Wu, Z. L.; Wu, B.; Li, Y. G.; Lei, M. K.

2017-05-01

A spatially averaged, time-dependent global plasma model has been developed to describe the reactive deposition of a TiAlSiN thin film by modulated pulsed power magnetron sputtering (MPPMS) discharges in Ar/N2 mixture gas, based on the particle balance and the energy balance in the ionization region, and considering the formation and erosion of the compound at the target surface. The modeling results show that, with increasing the N2 partial pressure from 0% to 40% at a constant working pressure of 0.3 Pa, the electron temperature during the strongly ionized period increases from 4 to 7 eV and the effective power transfer coefficient, which represents the power fraction that effectively heats the electrons and maintains the discharge, increases from about 4% to 7%; with increasing the working pressure from 0.1 to 0.7 Pa at a constant N2 partial pressure of 25%, the electron temperature decreases from 10 to 4 eV and the effective power transfer coefficient decreases from 8% to 5%. Using the modeled plasma parameters to evaluate the kinetic energy of arriving ions, the ion-to-neutral flux ratio of deposited species, and the substrate heating, the variations of process parameters that increase these values lead to an enhanced adatom mobility at the target surface and an increased input energy to the substrate, corresponding to the experimental observation of surface roughness reduction, the microstructure transition from the columnar structure to the dense featureless structure, and the enhancement of phase separation. At higher N2 partial pressure or lower working pressure, the modeling results demonstrate an increase in electron temperature, which shifts the discharge balance of Ti species from Ti+ to Ti2+ and results in a higher return fraction of Ti species, corresponding to the higher Al/Ti ratio of deposited films at these conditions. The modeling results are well correlated with the experimental observation of the composition variation and the microstructure transition of deposited TiAlSiN compound films, demonstrating the applicability of this approach in understanding the characteristics of reactive MPPMS discharges as well as the composition and microstructure of deposited compound films. The model for reactive MPPMS discharges has no special limitations and is applicable to high power impulse magnetron sputtering discharges as well.

Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronics.

PubMed

Heo, Jinseong; Byun, Kyung-Eun; Lee, Jaeho; Chung, Hyun-Jong; Jeon, Sanghun; Park, Seongjun; Hwang, Sungwoo

2013-01-01

Graphene heterostructures in which graphene is combined with semiconductors or other layered 2D materials are of considerable interest, as a new class of electronic devices has been realized. Here we propose a technology platform based on graphene-thin-film-semiconductor-metal (GSM) junctions, which can be applied to large-scale and power-efficient electronics compatible with a variety of substrates. We demonstrate wafer-scale integration of vertical field-effect transistors (VFETs) based on graphene-In-Ga-Zn-O (IGZO)-metal asymmetric junctions on a transparent 150 × 150 mm(2) glass. In this system, a triangular energy barrier between the graphene and metal is designed by selecting a metal with a proper work function. We obtain a maximum current on/off ratio (Ion/Ioff) up to 10(6) with an average of 3010 over 2000 devices under ambient conditions. For low-power logic applications, an inverter that combines complementary n-type (IGZO) and p-type (Ge) devices is demonstrated to operate at a bias of only 0.5 V.

Buckling analysis of stiff thin films suspended on a substrate with tripod surface relief structure

NASA Astrophysics Data System (ADS)

Yu, Qingmin; Chen, Furong; Li, Ming; Cheng, Huanyu

2017-09-01

A wavy configuration is a simple yet powerful structural design strategy, which has been widely used in flexible and stretchable electronics. A buckled structure created from a prestretch-contact-release process represents an early effort. Substrates with engineered surface relief structures (e.g., rectangular islands or tripod structure) have enabled stretchability to the devices without sacrificing their electric performance (e.g., high areal coverage for LEDs/photovoltaics/batteries/supercapacitors). In particular, the substrate with a tripod surface relief structure allows wrinkled devices to be suspended on a soft tripod substrate. This minimizes the contact area between devices and the deformed substrate, which contributes to a significantly reduced interfacial stress/strain. To uncover the underlying mechanism of such a design, we exploit the energy method to analytically investigate the buckling and postbuckling behaviors of stiff films suspended on a stretchable polymeric substrate with a tripod surface relief structure. Validated by finite element analysis, the predications from such an analytical study elucidate the deformed profile and maximum strain in the buckled and postbuckled stiff thin device films, providing a useful toolkit for future experimental designs.

A graphene Zener-Klein transistor cooled by a hyperbolic substrate

NASA Astrophysics Data System (ADS)

Yang, Wei; Berthou, Simon; Lu, Xiaobo; Wilmart, Quentin; Denis, Anne; Rosticher, Michael; Taniguchi, Takashi; Watanabe, Kenji; Fève, Gwendal; Berroir, Jean-Marc; Zhang, Guangyu; Voisin, Christophe; Baudin, Emmanuel; Plaçais, Bernard

2018-01-01

The engineering of cooling mechanisms is a bottleneck in nanoelectronics. Thermal exchanges in diffusive graphene are mostly driven by defect-assisted acoustic phonon scattering, but the case of high-mobility graphene on hexagonal boron nitride (hBN) is radically different, with a prominent contribution of remote phonons from the substrate. Bilayer graphene on a hBN transistor with a local gate is driven in a regime where almost perfect current saturation is achieved by compensation of the decrease in the carrier density and Zener-Klein tunnelling (ZKT) at high bias. Using noise thermometry, we show that the ZKT triggers a new cooling pathway due to the emission of hyperbolic phonon polaritons in hBN by out-of-equilibrium electron-hole pairs beyond the super-Planckian regime. The combination of ZKT transport and hyperbolic phonon polariton cooling renders graphene on BN transistors a valuable nanotechnology for power devices and RF electronics.

Promising features of low-temperature grown Ge nanostructures on Si(001) substrates

NASA Astrophysics Data System (ADS)

Wang, Ze; Wang, Shuguang; Yin, Yefei; Liu, Tao; Lin, Dongdong; Li, De-hui; Yang, Xinju; Jiang, Zuimin; Zhong, Zhenyang

2017-03-01

High-quality Ge nanostructures are obtained by molecular beam epitaxy of Ge on Si(001) substrates at 200 °C and ex situ annealing at 400 °C. Their structural properties are comprehensively characterized by atomic force microscopy, transmission electron microscopy and Raman spectroscopy. It is disclosed that they are almost defect free except for some defects at the Ge/Si interface and in the subsequent Si capping layer. The misfit strain in the nanostructure is substantially relaxed. Dramatically strong photoluminescence (PL) from the Ge nanostructures is observed. Detailed analyses on the power- and temperature-dependent PL spectra, together with a self-consistent calculation, indicate the confinement and the high quantum efficiency of excitons within the Ge nanostructures. Our results demonstrate that the Ge nanostructures obtained via the present feasible route may have great potential in optoelectronic devices for monolithic optical-electronic integration circuits.

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

NASA Astrophysics Data System (ADS)

Dogmus, Ezgi; Zegaoui, Malek; Medjdoub, Farid

2018-03-01

We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-µm-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩ·cm2.

Sonoelectrochemical one-pot synthesis of Pt - Carbon black nanocomposite PEMFC electrocatalyst.

PubMed

Karousos, Dionysios S; Desdenakis, Kostantinos I; Sakkas, Petros M; Sourkouni, Georgia; Pollet, Bruno G; Argirusis, Christos

2017-03-01

Simultaneous electrocatalytic Pt-nanoparticle synthesis and decoration of Vulcan XC-72 carbon black substrate was achieved in a novel one-step-process, combining galvanostatic pulsed electrodeposition and pulsed ultrasonication with high power, low-frequency (20kHz) ultrasound. Aqueous chloroplatinic acid precursor baths, as well as carbon black suspensions in the former, were examined and decoration was proven by a combination of characterization methods, namely: dynamic light scattering, transmission electron microscopy, scanning electron microscopy with EDX-analysis and cyclic voltammetry. In particular, PVP was shown to have a beneficial stabilizing effect against free nanoparticle aggregation, ensuring narrow size distributions of the nanoparticles synthesized, but is also postulated to prevent the establishment of a strong metal-substrate interaction. Current pulse amplitude was identified as the most critical nanoparticle size-determining parameters, while only small size particles, under 10nm, appeared to be attached to carbon black. Copyright © 2016 Elsevier B.V. All rights reserved.

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

NASA Astrophysics Data System (ADS)

Ju, Sanghyun; Facchetti, Antonio; Xuan, Yi; Liu, Jun; Ishikawa, Fumiaki; Ye, Peide; Zhou, Chongwu; Marks, Tobin J.; Janes, David B.

2007-06-01

The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including `see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with bulk or thin-film transistors made from the same materials, the prospect of processing at low temperatures compatible with plastic substrates, as well as their optical transparency and inherent mechanical flexibility. Here we report fully transparent In2O3 and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with ~82% optical transparency. These NWTs should be attractive as pixel-switching and driving transistors in active-matrix organic light-emitting diode (AMOLED) displays. The transparency of the entire pixel area should significantly enhance aperture ratio efficiency in active-matrix arrays and thus substantially decrease power consumption.

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics.

PubMed

Ju, Sanghyun; Facchetti, Antonio; Xuan, Yi; Liu, Jun; Ishikawa, Fumiaki; Ye, Peide; Zhou, Chongwu; Marks, Tobin J; Janes, David B

2007-06-01

The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with bulk or thin-film transistors made from the same materials, the prospect of processing at low temperatures compatible with plastic substrates, as well as their optical transparency and inherent mechanical flexibility. Here we report fully transparent In(2)O(3) and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with approximately 82% optical transparency. These NWTs should be attractive as pixel-switching and driving transistors in active-matrix organic light-emitting diode (AMOLED) displays. The transparency of the entire pixel area should significantly enhance aperture ratio efficiency in active-matrix arrays and thus substantially decrease power consumption.

Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Lowenthal, Mark D. (Inventor); Shotton, Neil O. (Inventor); Lewandowski, Mark Allan (Inventor); Frazier, Donald Odell (Inventor); Ray, William Johnstone (Inventor); Blanchard, Richard A. (Inventor); Fuller, Kirk A. (Inventor)

2013-01-01

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes forming at least one first conductor coupled to a base; coupling a plurality of substrate particles to the at least one first conductor; converting the plurality of substrate particles into a plurality of diodes; forming at least one second conductor coupled to the plurality of spherical diodes; and depositing or attaching a plurality of substantially spherical lenses suspended in a first polymer, with the lenses and the suspending polymer having different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. In various embodiments, the forming, coupling and converting steps are performed by or through a printing process.

Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Blanchard, Richard A. (Inventor); Fuller, Kirk A. (Inventor); Ray, William Johnstone (Inventor); Shotton, Neil O. (Inventor); Frazier, Donald Odell (Inventor); Lowenthal, Mark D. (Inventor); Lewandowski, Mark Allan (Inventor)

2013-01-01

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes forming at least one first conductor coupled to a base; coupling a plurality of substantially spherical substrate particles to the at least one first conductor; converting the substrate particles into a plurality of substantially spherical diodes; forming at least one second conductor coupled to the substantially spherical diodes; and depositing or attaching a plurality of substantially spherical lenses suspended in a first polymer. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. In various embodiments, the forming, coupling and converting steps are performed by or through a printing process.

Highly efficient TiO2-based microreactor for photocatalytic applications.

PubMed

Krivec, Matic; Žagar, Kristina; Suhadolnik, Luka; Čeh, Miran; Dražić, Goran

2013-09-25

A photocatalytic, TiO2-based microreactor is designed and fabricated on a metal-titanium foil. The microchannel is mechanically engraved in the substrate foil, and a double-layered TiO2 anatase film is immobilized on its inner walls with a two-step synthesis, which included anodization and a hydrothermal treatment. X-ray diffraction (XRD) and scanning electron microscopy (SEM) confirm the presence of an approximately 10-μm-thick layer of titania nanotubes and anatase nanoparticles. The SEM and transmission electron microscopy (TEM) of the cross sections show a dense interface between the titanium substrate and the TiO2 nanotubes. An additional layer of TiO2-anatase nanoparticles on the top of the film provides a large, photocatalytic surface area. The metal-titanium substrate with a functionalized serpentine channel is sealed with UV-transparent Plexiglas, and four 0.8-mW UV LEDs combined with a power controller on a small printed-circuit board are fixed over the substrate. The photocatalytic activity and the kinetic properties for the degradation of caffeine are provided, and the longer-term stability of the TiO2 film is evaluated. The results show that after 6 months of use and 3600 working cycles the microreactor still exhibits 60% of its initial efficiency.

Control method and system for use when growing thin-films on semiconductor-based materials

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

2001-01-01

A process and system for use during the growth of a thin film upon the surface of a substrate by exposing the substrate surface to vaporized material in a high vacuum (HV) facility involves the directing of an electron beam generally toward the surface of the substrate as the substrate is exposed to vaporized material so that electrons are diffracted from the substrate surface by the beam and the monitoring of the pattern of electrons diffracted from the substrate surface as vaporized material settles upon the substrate surface. When the monitored pattern achieves a condition indicative of the desired condition of the thin film being grown upon the substrate, the exposure of the substrate to the vaporized materials is shut off or otherwise adjusted. To facilitate the adjustment of the crystallographic orientation of the film relative to the electron beam, the system includes a mechanism for altering the orientation of the surface of the substrate relative to the electron beam.

Fabrication of ZnO Nanowire Based Piezoelectric Generators and Related Structures

NASA Astrophysics Data System (ADS)

Opoku, Charles; Dahiya, Abhishek Singh; Oshman, Christopher; Cayrel, Frederic; Poulin-Vittrant, Guylaine; Alquier, Daniel; Camara, Nicolas

Using vertically grown hydrothermal ZnO nanowires, we demonstrate the assembly of fully functional piezoelectric energy harvesters on plastics substrates. A seedless hydrothermal process is employed for the growth of single crystalline vertically orientated ZnO NWs at around 100oC. Flexible NG are assembled using ∼7 μm thick PDMS polymer matrix on a 3x3cm substrate. A representative device with an active area of 4cm2 is characterised revealing average output voltage generation of ∼22mV (±1.2) and -32mV (±0.16) in the positive and negative cycles after 3-4mm periodic deflection at 20Hz. A power density of ∼288nW/cm3 is estimated for the device. It is envisaged that such energy scavengers may find potential applications targeting self-powered systems, sensors and on-body charging of electronics.

Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pooth, Alexander, E-mail: a.pooth@bristol.ac.uk; IQE; Uren, Michael J.

2015-12-07

Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs.

Gallium nitride optoelectronic devices

NASA Technical Reports Server (NTRS)

Chu, T. L.; Chu, S. S.

1972-01-01

The growth of bulk gallium nitride crystals was achieved by the ammonolysis of gallium monochloride. Gallium nitride single crystals up to 2.5 x 0.5 cm in size were produced. The crystals are suitable as substrates for the epitaxial growth of gallium nitride. The epitaxial growth of gallium nitride on sapphire substrates with main faces of (0001) and (1T02) orientations was achieved by the ammonolysis of gallium monochloride in a gas flow system. The grown layers had electron concentrations in the range of 1 to 3 x 10 to the 19th power/cu cm and Hall mobilities in the range of 50 to 100 sq cm/v/sec at room temperature.

Structural pathway of regulated substrate transfer and threading through an Hsp100 disaggregase.

PubMed

Deville, Célia; Carroni, Marta; Franke, Kamila B; Topf, Maya; Bukau, Bernd; Mogk, Axel; Saibil, Helen R

2017-08-01

Refolding aggregated proteins is essential in combating cellular proteotoxic stress. Together with Hsp70, Hsp100 chaperones, including Escherichia coli ClpB, form a powerful disaggregation machine that threads aggregated polypeptides through the central pore of tandem adenosine triphosphatase (ATPase) rings. To visualize protein disaggregation, we determined cryo-electron microscopy structures of inactive and substrate-bound ClpB in the presence of adenosine 5'- O -(3-thiotriphosphate), revealing closed AAA+ rings with a pronounced seam. In the substrate-free state, a marked gradient of resolution, likely corresponding to mobility, spans across the AAA+ rings with a dynamic hotspot at the seam. On the seam side, the coiled-coil regulatory domains are locked in a horizontal, inactive orientation. On the opposite side, the regulatory domains are accessible for Hsp70 binding, substrate targeting, and activation. In the presence of the model substrate casein, the polypeptide threads through the entire pore channel and increased nucleotide occupancy correlates with higher ATPase activity. Substrate-induced domain displacements indicate a pathway of regulated substrate transfer from Hsp70 to the ClpB pore, inside which a spiral of loops contacts the substrate. The seam pore loops undergo marked displacements, along with ordering of the regulatory domains. These asymmetric movements suggest a mechanism for ATPase activation and substrate threading during disaggregation.

Away from silicon era: the paper electronics

NASA Astrophysics Data System (ADS)

Martins, R.; Brás, B.; Ferreira, I.; Pereira, L.; Barquinha, P.; Correia, N.; Costa, R.; Busani, T.; Gonçalves, A.; Pimentel, A.; Fortunato, E.

2011-02-01

Today there is a strong interest in the scientific and industrial community concerning the use of biopolymers for electronic applications, mainly driven by low-cost and disposable applications. Adding to this interest, we must recognize the importance of the wireless auto sustained and low energy consumption electronics dream. This dream can be fulfilled by cellulose paper, the lightest and the cheapest known substrate material, as well as the Earth's major biopolymer and of tremendous global economic importance. The recent developments of oxide thin film transistors and in particular the production of paper transistors at room temperature had contributed, as a first step, for the development of disposable, low cost and flexible electronic devices. To fulfil the wireless demand, it is necessary to prove the concept of self powered devices. In the case of paper electronics, this implies demonstrating the idea of self regenerated thin film paper batteries and its integration with other electronic components. Here we demonstrate this possibility by actuating the gate of paper transistors by paper batteries. We found that when a sheet of cellulose paper is covered in both faces with thin layers of opposite electrochemical potential materials, a voltage appears between both electrodes -paper battery, which is also self-regenerated. The value of the potential depends upon the materials used for anode and cathode. An open circuit voltage of 0.5V and a short-circuit current density of 1μA/cm2 were obtained in the simplest structure produced (Cu/paper/Al). For actuating the gate of the paper transistor, seven paper batteries were integrated in the same substrate in series, supplying a voltage of 3.4V. This allows proper ON/OFF control of the paper transistor. Apart from that transparent conductive oxides can be also used as cathode/anode materials allowing so the production of thin film batteries with transparent electrodes compatible with flexible, invisible, self powered and wireless electronics.

A high efficiency C-band internally-matched harmonic tuning GaN power amplifier

NASA Astrophysics Data System (ADS)

Lu, Y.; Zhao, B. C.; Zheng, J. X.; Zhang, H. S.; Zheng, X. F.; Ma, X. H.; Hao, Y.; Ma, P. J.

2016-09-01

In this paper, a high efficiency C-band gallium nitride (GaN) internally-matched power amplifier (PA) is presented. This amplifier consists of 2-chips of self-developed GaN high-electron mobility transistors (HEMTs) with 16 mm total gate width on SiC substrate. New harmonic manipulation circuits are induced both in the input and output matching networks for high efficiency matching at fundamental and 2nd-harmonic frequency, respectively. The developed amplifier has achieved 72.1% power added efficiency (PAE) with 107.4 W output power at 5 GHz. To the best of our knowledge, this amplifier exhibits the highest PAE in C-band GaN HEMT amplifiers with over 100 W output power. Additionally, 1000 hours' aging test reveals high reliability for practical applications.

Laser profilometer module based on a low-temperature cofired ceramic substrate

NASA Astrophysics Data System (ADS)

Heikkinen, Veli; Heikkinen, Mikko; Keranen, Kimmo; Mitikka, Risto S.; Putila, Veli-Pekka; Tukkiniemi, Kari

2005-09-01

We realized a laser profilometer module using low temperature cofired ceramics technology. The device consists of a vertical-cavity surface-emitting laser as the light source and a complementary metal oxide semiconductor image sensor as the detector. The laser transmitter produces a thin light stripe on the measurable object, and the receiver calculates the distance profile using triangulation. Because the design of optoelectronic modules, such as the laser profilometer, is usually carried out using specialized software, its electronic compatibility is very important. We developed a data transmission network using commercial optical, electrical, and mechanical design software, which enabled us to electronically transfer data between the designers. The module electronics were realized with multilayer ceramics technology that eases component assembly by providing precision alignment features in the substrate. The housing was manufactured from aluminum using electronic data transfer from the mechanical design software to the five-axis milling workstation. Target distance profiles were obtained from 100 points with an accuracy varying from 0.1 mm at a 5-cm distance to 2 cm at 1.5 m. The module has potential for distance measurement in portable devices where small size, light weight, and low power consumption are important.

Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics.

PubMed

Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol; Park, Won-Tae; Kim, Mincheol; Lee, Seungwon; Bong, Jae Hoon; Noh, Yong-Young; Cho, Byung Jin; Yoo, Seunghyup; Im, Sung Gap

2015-06-01

Insulating layers based on oxides and nitrides provide high capacitance, low leakage, high breakdown field and resistance to electrical stresses when used in electronic devices based on rigid substrates. However, their typically high process temperatures and brittleness make it difficult to achieve similar performance in flexible or organic electronics. Here, we show that poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) prepared via a one-step, solvent-free technique called initiated chemical vapour deposition (iCVD) is a versatile polymeric insulating layer that meets a wide range of requirements for next-generation electronic devices. Highly uniform and pure ultrathin films of pV3D3 with excellent insulating properties, a large energy gap (>8 eV), tunnelling-limited leakage characteristics and resistance to a tensile strain of up to 4% are demonstrated. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable pV3D3 to be grown conformally on plastic substrates to yield flexible field-effect transistors as well as on a variety of channel layers, including organics, oxides, and graphene.

The dependence of the sporicidal effects on the power and pressure of RF-generated plasma processes.

PubMed

Lassen, Klaus S; Nordby, Bolette; Grün, Reinar

2005-07-01

The sporicidal effect of 20 different radio-frequency plasma processes produced by combining five different gas mixtures [O(2), Ar/H(2) (50/50%), Ar/H(2) (5/95%), O(2)/H(2) (50/50%), O(2)/H(2) (95/5%)] with four power/pressure settings were tested. Sporicidal effects of oxygen-containing plasmas were dependent on power at low pressure settings but not at high pressure settings. In the absence of oxygen no power dependency was observed at either high or low pressure settings. Survivor curves obtained with the use of nonoxygen plasmas typically had a tailing tendency. Only a mixture-optimized Ar/H(2) (15/85%) plasma process was not encumbered by tailing, and produced a decimal reduction time (D value) below 2 min for Bacillus stearothermophilus spores. Scanning electron microscopy showed that a CF(4)/O(2) plasma did more damage to the substrate than the 15/85% Ar/H(2) plasma. The present results indicate that UV irradiation inactivation is swift and power and pressure independent. Additionally, it is produced at low energy. However, it is not complete. Inactivation through etching is highly power and pressure dependent; finally, inactivation by photodesorption is moderately power and pressure dependent. A sterilization process relying on this mechanism is very advantageous because it combines a highly sporicidal effect with low substrate damage. Copyright 2005 Wiley Periodicals, Inc.

Effect of plasma power on reduction of printable graphene oxide thin films on flexible substrates

NASA Astrophysics Data System (ADS)

Banerjee, Indrani; Mahapatra, Santosh K.; Pal, Chandana; Sharma, Ashwani K.; Ray, Asim K.

2018-05-01

Room temperature hydrogen plasma treatment on solution processed 300 nm graphene oxide (GO) films on flexible indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates has been performed by varying the plasma power between 20 W and 60 W at a constant exposure time of 30 min with a view to examining the effect of plasma power on reduction of GO. X-ray powder diffraction (XRD) and Raman spectroscopic studies show that high energy hydrogen species generated in the plasma assist fast exfoliation of the oxygenated functional groups present in the GO samples. Significant decrease in the optical band gap is observed from 4.1 eV for untreated samples to 0.5 eV for 60 W plasma treated samples. The conductivity of the films treated with 60 W plasma power is estimated to be six orders of magnitude greater than untreated GO films and this enhancement of conductivity on plasma reduction has been interpreted in terms of UV-visible absorption spectra and density functional based first principle computational calculations. Plasma reduction of GO/ITO/PET structures can be used for efficiently tuning the electrical and optical properties of reduced graphene oxide (rGO) for flexible electronics applications.

Phylogenetic and Metagenomic Analyses of Substrate-Dependent Bacterial Temporal Dynamics in Microbial Fuel Cells

PubMed Central

Zhang, Husen; Chen, Xi; Braithwaite, Daniel; He, Zhen

2014-01-01

Understanding the microbial community structure and genetic potential of anode biofilms is key to improve extracellular electron transfers in microbial fuel cells. We investigated effect of substrate and temporal dynamics of anodic biofilm communities using phylogenetic and metagenomic approaches in parallel with electrochemical characterizations. The startup non-steady state anodic bacterial structures were compared for a simple substrate, acetate, and for a complex substrate, landfill leachate, using a single-chamber air-cathode microbial fuel cell. Principal coordinate analysis showed that distinct community structures were formed with each substrate type. The bacterial diversity measured as Shannon index decreased with time in acetate cycles, and was restored with the introduction of leachate. The change of diversity was accompanied by an opposite trend in the relative abundance of Geobacter-affiliated phylotypes, which were acclimated to over 40% of total Bacteria at the end of acetate-fed conditions then declined in the leachate cycles. The transition from acetate to leachate caused a decrease in output power density from 243±13 mW/m2 to 140±11 mW/m2, accompanied by a decrease in Coulombic electron recovery from 18±3% to 9±3%. The leachate cycles selected protein-degrading phylotypes within phylum Synergistetes. Metagenomic shotgun sequencing showed that leachate-fed communities had higher cell motility genes including bacterial chemotaxis and flagellar assembly, and increased gene abundance related to metal resistance, antibiotic resistance, and quorum sensing. These differentially represented genes suggested an altered anodic biofilm community in response to additional substrates and stress from the complex landfill leachate. PMID:25202990

Phylogenetic and metagenomic analyses of substrate-dependent bacterial temporal dynamics in microbial fuel cells.

PubMed

Zhang, Husen; Chen, Xi; Braithwaite, Daniel; He, Zhen

2014-01-01

Understanding the microbial community structure and genetic potential of anode biofilms is key to improve extracellular electron transfers in microbial fuel cells. We investigated effect of substrate and temporal dynamics of anodic biofilm communities using phylogenetic and metagenomic approaches in parallel with electrochemical characterizations. The startup non-steady state anodic bacterial structures were compared for a simple substrate, acetate, and for a complex substrate, landfill leachate, using a single-chamber air-cathode microbial fuel cell. Principal coordinate analysis showed that distinct community structures were formed with each substrate type. The bacterial diversity measured as Shannon index decreased with time in acetate cycles, and was restored with the introduction of leachate. The change of diversity was accompanied by an opposite trend in the relative abundance of Geobacter-affiliated phylotypes, which were acclimated to over 40% of total Bacteria at the end of acetate-fed conditions then declined in the leachate cycles. The transition from acetate to leachate caused a decrease in output power density from 243±13 mW/m2 to 140±11 mW/m2, accompanied by a decrease in Coulombic electron recovery from 18±3% to 9±3%. The leachate cycles selected protein-degrading phylotypes within phylum Synergistetes. Metagenomic shotgun sequencing showed that leachate-fed communities had higher cell motility genes including bacterial chemotaxis and flagellar assembly, and increased gene abundance related to metal resistance, antibiotic resistance, and quorum sensing. These differentially represented genes suggested an altered anodic biofilm community in response to additional substrates and stress from the complex landfill leachate.

Innovative Electrostatic Adhesion Technologies

NASA Technical Reports Server (NTRS)

Bryan, Tom; Macleod, Todd; Gagliano, Larry; Williams, Scott; McCoy, Brian

2015-01-01

Developing specialized Electro-Static grippers (commercially used in Semiconductor Manufacturing and in package handling) will allow gentle and secure Capture, Soft Docking, and Handling of a wide variety of materials and shapes (such as upper-stages, satellites, arrays, and possibly asteroids) without requiring physical features or cavities for a pincher or probe or using harpoons or nets. Combined with new rigid boom mechanisms or small agile chaser vehicles, flexible, high speed Electro-Static Grippers can enable compliant capture of spinning objects starting from a safe stand-off distance. Electroadhesion (EA) can enable lightweight, ultra-low-power, compliant attachment in space by using an electrostatic force to adhere similar and dissimilar surfaces. A typical EA enabled device is composed of compliant space-rated materials, such as copper-clad polyimide encapsulated by polymers. Attachment is induced by strong electrostatic forces between any substrate material, such as an exterior satellite panel and a compliant EA gripper pad surface. When alternate positive and negative charges are induced in adjacent planar electrodes in an EA surface, the electric fields set up opposite charges on the substrate and cause an electrostatic adhesion between the electrodes and the induced charges on the substrate. Since the electrodes and the polymer are compliant and can conform to uneven or rough surfaces, the electrodes can remain intimately close to the entire surface, enabling high clamping pressures. Clamping pressures of more than 3 N/cm2 in shear can be achieved on a variety of substrates with ultra-low holding power consumption (measured values are less than 20 microW/Newton weight held). A single EA surface geometry can be used to clamp both dielectric and conductive substrates, with slightly different physical mechanisms. Furthermore EA clamping requires no normal force be placed on the substrate, as conventional docking requires. Internally funded research and development has demonstrated that EA can function effectively in space, even in the presence of strong ultraviolet radiation, atomic oxygen, and free electrons. We created a test setup in an existing vacuum chamber to simulate low-Earth-orbit conditions. An EA mechanism was fabricated and installed in the chamber, instrumented, operated in a vacuum, and subjected to ultraviolet photons and free electrons generated by an in-chamber multipactor electron emitter. Extensions to EA that can add value include proximity and contact sensing and transverse motion or rotation, both of which could enhance docking or assembly applications. Possible next steps include development of targeted applications for ground investigation or on-orbit subsystem performance demonstrations using low cost access to space such as CubeSats.

Innovative Electrostatic Adhesion Technologies

NASA Astrophysics Data System (ADS)

Gagliano, L.; Bryan, T.; Williams, S.; McCoy, B.; MacLeod, T.

Developing specialized Electro-Static grippers (commercially used in Semiconductor Manufacturing and in package handling) will allow gentle and secure Capture, Soft Docking, and Handling of a wide variety of materials and shapes (such as upper-stages, satellites, arrays, and possibly asteroids) without requiring physical features or cavities for a pincher or probe or using harpoons or nets. Combined with new rigid boom mechanisms or small agile chaser vehicles, flexible, high speed Electro-Static Grippers can enable compliant capture of spinning objects starting from a safe stand-off distance. Electroadhesion (EA) can enable lightweight, ultra-low-power, compliant attachment in space by using an electrostatic force to adhere similar and dissimilar surfaces. A typical EA enabled device is composed of compliant space-rated materials, such as copper-clad polyimide encapsulated by polymers. Attachment is induced by strong electrostatic forces between any substrate material, such as an exterior satellite panel and a compliant EA surface. When alternate positive and negative charges are induced in adjacent planar electrodes in an EA surface, the electric fields set up opposite charges on the substrate and cause an electrostatic adhesion between the electrodes and the induced charges on the substrate. Since the electrodes and the polymer are compliant and can conform to uneven or rough surfaces, the electrodes can remain intimately close to the entire surface, enabling high clamping pressures. Clamping pressures of more than 3 N/cm2 in shear can be achieved on a variety of substrates with ultra-low holding power consumption (measured values are less than 20 microW/Newton weight held). A single EA surface geometry can be used to clamp both dielectric and conductive substrates, with slightly different physical mechanisms. Furthermore EA clamping requires no normal force be placed on the substrate, as conventional docking requires. Internally funded research and development has demonstrated that EA can function effectively in space, even in the presence of strong ultraviolet radiation, atomic oxygen, and free electrons. We created a test setup in an existing vacuum chamber to simulate low-Earth-orbit conditions. An EA mechanism was fabricated and installed in the chamber, instrumented, operated in a vacuum, and subjected to ultraviolet photons and free electrons generated by an in-chamber multipactor electron emitter. Extensions to EA that can add value include proximity and contact sensing and transverse motion or rotation, both of which could enhance docking or assembly applications. Possible next steps include development of targeted applications for ground investigation or on-orbit subsystem performance demonstrations using low cost access to space such as CubeSats.

Growth and high rate reactive ion etching of epitaxially grown barium hexaferrite films on single crystal silicon carbide substrates

NASA Astrophysics Data System (ADS)

Chen, Zhaohui

Ferrites are an invaluable group of insulating magnetic materials used for high frequency microwave applications in such passive electronic devices as isolators, phase shifters, and circulators. Because of their high permeability, non-reciprocal electromagnetic properties, and low eddy current losses, there are no other materials that serve such a broad range of applications. Until recently, they have been widely employed in bulk form, with little success in thin film-based applications in commercial or military microwave technologies. In today's technology, emerging electronic systems, such as high frequency, high power wireless and satellite communications (GPS, Bluetooth, WLAN, commercial radar, etc) thin film materials are in high demand. It is widely recognized that as high frequency devices shift to microwave frequencies the integration of passive devices with semiconductor electronics holds significant advantages in the realization of miniaturization, broader bandwidths, higher performance, speed, power and lower production costs. Thus, the primary objective of this thesis is to explore the integration of ferrite films with wide band gap semiconductor substrates for the realization of monolithic integrated circuits (MICs). This thesis focuses on two key steps for the integration of barium hexaferrite (Ba M-type or BaM) devices on semiconductor substrates. First, the development of high crystal quality ferrite film growth via pulsed laser deposition on wide band gap silicon carbide semiconductor substrates, and second, the effective patterning of BaM films using dry etching techniques. To address part one, BaM films were deposited on 6H silicon carbide (0001) substrates by Pulsed Laser Deposition. X-ray diffraction showed strong crystallographic alignment while pole figures exhibited reflections consistent with epitaxial growth. After optimized annealing, BaM films have a perpendicular magnetic anisotropy field of 16,900 Oe, magnetization (4piMs) of 4.4 kG, and ferromagnetic resonance peak-to-peak derivative linewidth at 53 GHz of 96 Oe. This combination of properties qualifies these films for microwave device applications. This marks the first growth of a microwave ferrite on SiC substrates and offers a new approach in the design and development of mu-wave and mm-wave monolithic integrated circuits. In part two, high-rate reactive ion etching using CHF3/SF6 gas mixtures was successfully demonstrated on BaM films, resulting in high aspect profile features of less than 50 nm in lateral dimension. These demonstrations enable the future integration of ferrites into MIC devices and technologies.

Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons

PubMed Central

Braun, Kai; Wang, Xiao; Kern, Andreas M; Adler, Hilmar; Peisert, Heiko; Chassé, Thomas; Zhang, Dai

2015-01-01

Summary Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip) of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode) into the highest occupied orbital of the closest substrate-bound molecule (lower level) and radiative recombination with an electron from above the Fermi level (upper level), hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode. PMID:26171286

Hydride vapor phase epitaxy of high structural perfection thick AlN layers on off-axis 6H-SiC

NASA Astrophysics Data System (ADS)

Volkova, Anna; Ivantsov, Vladimir; Leung, Larry

2011-01-01

The employment of more than 10 μm thick AlN epilayers on SiC substrates for AlGaN/GaN high-electron-mobility transistors (HEMTs) substantially raises their performance in high-power energy-efficient amplifiers for 4G wireless mobile stations. In this paper, structural properties and surface morphology of thick AlN epilayers deposited by hydride vapor phase epitaxy (HVPE) on off-axis conductive 6H-SiC substrates are reported. The epilayers were examined in detail by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), Nomarski differential interference contrast (DIC), scanning electron microscopy (SEM), and selective wet chemical etching. At optimal substrate preparation and growth conditions, a full width at half-maximum (FWHM) of the XRD rocking curve (RC) for the symmetric (00.2) reflex was very close to that of the substrate (less than 40 arcsec) suggesting low screw dislocation density in the epilayer (˜10 6 cm -2) and small in-plane tilt misorientation. Reciprocal space mapping around asymmetric reflexes and measured lattice parameters indicated a fully relaxed state of the epilayers. The unit-cell-high stepped areas of the epilayers with 0.5 nm root mean square (RMS) roughness over 1×1 μm 2 scan were alternated with step-bunching instabilities up to 350 nm in height. Low warp of the substrates makes them suitable for precise epitaxy of HEMT structures.

30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

NASA Astrophysics Data System (ADS)

Murugapandiyan, P.; Ravimaran, S.; William, J.

2017-08-01

The DC and RF performance of 30 nm gate length enhancement mode (E-mode) InAlN/AlN/GaN high electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, InGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance {g}{{m}} of 1050 mS/mm, current gain cut-off frequency {f}{{t}} of 350 GHz and power gain cut-off frequency {f}\\max of 340 GHz. At room temperature the measured carrier mobility (μ), sheet charge carrier density ({n}{{s}}) and breakdown voltage are 1580 cm2/(V \\cdot s), 1.9× {10}13 {{cm}}-2, and 10.7 V respectively. The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.

Mechanically Flexible and High-Performance CMOS Logic Circuits.

PubMed

Honda, Wataru; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

2015-10-13

Low-power flexible logic circuits are key components required by the next generation of flexible electronic devices. For stable device operation, such components require a high degree of mechanical flexibility and reliability. Here, the mechanical properties of low-power flexible complementary metal-oxide-semiconductor (CMOS) logic circuits including inverter, NAND, and NOR are investigated. To fabricate CMOS circuits on flexible polyimide substrates, carbon nanotube (CNT) network films are used for p-type transistors, whereas amorphous InGaZnO films are used for the n-type transistors. The power consumption and voltage gain of CMOS inverters are <500 pW/mm at Vin = 0 V (<7.5 nW/mm at Vin = 5 V) and >45, respectively. Importantly, bending of the substrate is not found to cause significant changes in the device characteristics. This is also observed to be the case for more complex flexible NAND and NOR logic circuits for bending states with a curvature radius of 2.6 mm. The mechanical stability of these CMOS logic circuits makes them ideal candidates for use in flexible integrated devices.

Mechanically Flexible and High-Performance CMOS Logic Circuits

PubMed Central

Honda, Wataru; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

2015-01-01

Low-power flexible logic circuits are key components required by the next generation of flexible electronic devices. For stable device operation, such components require a high degree of mechanical flexibility and reliability. Here, the mechanical properties of low-power flexible complementary metal–oxide–semiconductor (CMOS) logic circuits including inverter, NAND, and NOR are investigated. To fabricate CMOS circuits on flexible polyimide substrates, carbon nanotube (CNT) network films are used for p-type transistors, whereas amorphous InGaZnO films are used for the n-type transistors. The power consumption and voltage gain of CMOS inverters are <500 pW/mm at Vin = 0 V (<7.5 nW/mm at Vin = 5 V) and >45, respectively. Importantly, bending of the substrate is not found to cause significant changes in the device characteristics. This is also observed to be the case for more complex flexible NAND and NOR logic circuits for bending states with a curvature radius of 2.6 mm. The mechanical stability of these CMOS logic circuits makes them ideal candidates for use in flexible integrated devices. PMID:26459882

Power inverters

DOEpatents

Miller, David H [Redondo Beach, CA; Korich, Mark D [Chino Hills, CA; Smith, Gregory S [Woodland Hills, CA

2011-11-15

Power inverters include a frame and a power module. The frame has a sidewall including an opening and defining a fluid passageway. The power module is coupled to the frame over the opening and includes a substrate, die, and an encasement. The substrate includes a first side, a second side, a center, an outer periphery, and an outer edge, and the first side of the substrate comprises a first outer layer including a metal material. The die are positioned in the substrate center and are coupled to the substrate first side. The encasement is molded over the outer periphery on the substrate first side, the substrate second side, and the substrate outer edge and around the die. The encasement, coupled to the substrate, forms a seal with the metal material. The second side of the substrate is positioned to directly contact a fluid flowing through the fluid passageway.

MOCVD Growth of III-V Photodetectors and Light Emitters for Integration of Optoelectronic Devices on Si substrates

NASA Astrophysics Data System (ADS)

Geng, Yu

With the increase of clock speed and wiring density in integrated circuits, inter-chip and intra-chip interconnects through conventional electrical wires encounter increasing difficulties because of the large power loss and bandwidth limitation. Optical interconnects have been proposed as an alternative to copper-based interconnects and are under intense study due to their large data capacity, high data quality and low power consumption. III-V compound semiconductors offer high intrinsic electron mobility, small effective electron mass and direct bandgap, which make this material system advantageous for high-speed optoelectronic devices. The integration of III-V optoelectronic devices on Si substrates will provide the combined advantage of a high level of integration and large volume production of Si-based electronic circuitry with the superior electrical and optical performance of III-V components, paving the way to a new generation of hybrid integrated circuits. In this thesis, the direct heteroepitaxy of photodetectors (PDs) and light emitters using metal-organic chemical vapor deposition for the integration of photonic devices on Si substrates were studied. First we studied the selective-area growth of InP/GaAs on patterned Si substrates for PDs. To overcome the loading effect, a multi-temperature composite growth technique for GaAs was developed. By decreasing various defects such as dislocations and anti-phase domains, the GaAs and InP buffer layers are with good crystalline quality and the PDs show high speed and low dark current performance both at the edge and center of the large growth well. Then the growth and fabrication of GaAs/AlGaAs QW lasers were studied. Ellipsometry was used to calibrate the Al composition of AlGaAs. Thick p and n type AlGaAs with a mirrorlike surface were grown by high V/III ratio and high temperature. The GaAs/AlGaAs broad area QW laser was successfully grown and fabricated on GaAs substrate and showed a pulsed lasing result with a threshold current density of about 800 A/cm2. For the integration of lasers on Si substrate, quantum dot (QD) lasers were studied. A flow-and-stop process of TBA was used to grow InAs QDs with the in-situ monitor EpiRas. QDs with a PL wavelength of ˜1.3 mum were grown on GaAs and Si substrates. To decrease the PL degradation problem caused by the contaminations from AlGaAs, an InGaAs insertion layer was inserted in between the AlGaAs and QDs region. Microdisk and a-Si waveguide lasers are designed and fabricated.

Laser ablated high T(sub c) superconducting thin YBa2Cu3O(7-x) films on substrates suitable for microwave applications

NASA Astrophysics Data System (ADS)

Warner, J. D.; Meola, J. E.; Jenkins, K. A.; Bhasin, K. B.

1990-04-01

The development of high temperature superconducting YBa2Cu3O(7-x) thin films on substrates suitable for microwave applications is of great interest for evaluating their applications for space radar, communication, and sensor systems. Thin films of YBa2Cu3O(7-x) were formed on SrTiO3, ZrO2, MgO, and LaAlO3 substrates by laser ablation. The wavelength used was 248 nm from a KrF excimer laser. During deposition the films were heated to 600 C in a flowing oxygen environment, and required no post annealing. The low substrate temperature during deposition with no post annealing gave films which were smooth, which had their c-axis aligned to the substrates, and which had grains ranging from 0.2 to 0.5 microns in size. The films being c-axis aligned gave excellent surface resistance at 35 GHz which was lower than that of copper at 77 K. At present, LaAlO3 substrates with a dielectric constant of 22, appears suitable as a substrate for microwave and electronic applications. The films were characterized by resistance-temperature measurements, scanning electron microscopy, and x ray diffraction. The highest critical transition temperatures (T sub c) are above 89 K for films on SrTiO3 and LaAlO3, above 88 K for ZrO2, and above 86 K for MgO. The critical current density (J sub c) of the films on SrTiO3 is above 2 x 10(exp 6) amperes/sq cm at 77 K. The T(sub c) and J(sub c) are reported as a function of laser power, composition of the substrate, and temperature of the substrate during deposition.

Gate-Induced Metal–Insulator Transition in MoS 2 by Solid Superionic Conductor LaF 3

DOE PAGES

Wu, Chun-Lan; Yuan, Hongtao; Li, Yanbin; ...

2018-03-23

Electric-double-layer (EDL) gating with liquid electrolyte has been a powerful tool widely used to explore emerging interfacial electronic phenomena. Due to the large EDL capacitance, a high carrier density up to 10 14 cm –2 can be induced, directly leading to the realization of field-induced insulator to metal (or superconductor) transition. However, the liquid nature of the electrolyte has created technical issues including possible side electrochemical reactions or intercalation, and the potential for huge strain at the interface during cooling. In addition, the liquid coverage of active devices also makes many surface characterizations and in situ measurements challenging. Here, wemore » demonstrate an all solid-state EDL device based on a solid superionic conductor LaF 3, which can be used as both a substrate and a fluorine ionic gate dielectric to achieve a wide tunability of carrier density without the issues of strain or electrochemical reactions and can expose the active device surface for external access. Based on LaF 3 EDL transistors (EDLTs), we observe the metal–insulator transition in MoS 2. Interestingly, the well-defined crystal lattice provides a more uniform potential distribution in the substrate, resulting in less interface electron scattering and therefore a higher mobility in MoS 2 transistors. Finally, this result shows the powerful gating capability of LaF 3 solid electrolyte for new possibilities of novel interfacial electronic phenomena.« less

Printed energy storage devices by integration of electrodes and separators into single sheets of paper

NASA Astrophysics Data System (ADS)

Hu, Liangbing; Wu, Hui; Cui, Yi

2010-05-01

We report carbon nanotube thin film-based supercapacitors fabricated with printing methods, where electrodes and separators are integrated into single sheets of commercial paper. Carbon nanotube films are easily printed with Meyer rod coating or ink-jet printing onto a paper substrate due to the excellent ink absorption of paper. A specific capacity of 33 F/g at a high specific power of 250 000 W/kg is achieved with an organic electrolyte. Such a lightweight paper-based supercapacitor could be used to power paper electronics such as transistors or displays.

A Fully-Sealed Carbon-Nanotube Cold-Cathode Terahertz Gyrotron

PubMed Central

Yuan, Xuesong; Zhu, Weiwei; Zhang, Yu; Xu, Ningsheng; Yan, Yang; Wu, Jianqiang; Shen, Yan; Chen, Jun; She, Juncong; Deng, Shaozhi

2016-01-01

Gigahertz to terahertz radiation sources based on cold-cathode vacuum electron technology are pursued, because its unique characteristics of instant switch-on and power saving are important to military and space applications. Gigahertz gyrotron was reported using carbon nanotube (CNT) cold-cathode. It is reported here in first time that a fully-sealed CNT cold-cathode 0.22 THz-gyrotron is realized, typically with output power of 500 mW. To achieve this, we have studied mechanisms responsible for CNTs growth on curved shape metal surface, field emission from the sidewall of a CNT, and crystallized interface junction between CNT and substrate material. We have obtained uniform growth of CNTs on and direct growth from cone-cylinder stainless-steel electrode surface, and field emission from both tips and sidewalls of CNTs. It is essential for the success of a CNT terahertz gyrotron to have such high quality, high emitting performance CNTs. Also, we have developed a magnetic injection electron gun using CNT cold-cathode to exploit the advantages of such a conventional gun design, so that a large area emitting surface is utilized to deliver large current for electron beam. The results indicate that higher output power and higher radiation frequency terahertz gyrotron may be made using CNT cold-cathode electron gun. PMID:27609247

A Fully-Sealed Carbon-Nanotube Cold-Cathode Terahertz Gyrotron.

PubMed

Yuan, Xuesong; Zhu, Weiwei; Zhang, Yu; Xu, Ningsheng; Yan, Yang; Wu, Jianqiang; Shen, Yan; Chen, Jun; She, Juncong; Deng, Shaozhi

2016-09-09

Gigahertz to terahertz radiation sources based on cold-cathode vacuum electron technology are pursued, because its unique characteristics of instant switch-on and power saving are important to military and space applications. Gigahertz gyrotron was reported using carbon nanotube (CNT) cold-cathode. It is reported here in first time that a fully-sealed CNT cold-cathode 0.22 THz-gyrotron is realized, typically with output power of 500 mW. To achieve this, we have studied mechanisms responsible for CNTs growth on curved shape metal surface, field emission from the sidewall of a CNT, and crystallized interface junction between CNT and substrate material. We have obtained uniform growth of CNTs on and direct growth from cone-cylinder stainless-steel electrode surface, and field emission from both tips and sidewalls of CNTs. It is essential for the success of a CNT terahertz gyrotron to have such high quality, high emitting performance CNTs. Also, we have developed a magnetic injection electron gun using CNT cold-cathode to exploit the advantages of such a conventional gun design, so that a large area emitting surface is utilized to deliver large current for electron beam. The results indicate that higher output power and higher radiation frequency terahertz gyrotron may be made using CNT cold-cathode electron gun.

From Playroom to Lab: Tough Stretchable Electronics Analyzed with a Tabletop Tensile Tester Made from Toy‐Bricks

PubMed Central

Kettlgruber, Gerald; Siket, Christian M.; Drack, Michael; Graz, Ingrid M.; Cakmak, Umut; Major, Zoltan; Kaltenbrunner, Martin; Bauer, Siegfried

2016-01-01

Toy bricks are an ideal platform for the cost‐effective rapid prototyping of a tabletop tensile tester with measurement accuracy on par with expensive, commercially available laboratory equipment. Here, a tester is presented that is not only a versatile demonstration device in mechanics, electronics, and physics education and an eye‐catcher on exhibitions, but also a powerful tool for stretchable electronics research. Following the “open‐source movement” the build‐up of the tester is described and all the details for easy reproduction are disclosed. A a new design of highly conformable all‐elastomer based graded rigid island printed circuit boards is developed. Tough bonded to this elastomer substrate are imperceptible electronic foils bearing conductors and off‐the‐shelf microelectronics, paving the way for next generation smart electronic appliances. PMID:27588259

A Solution Processable High-Performance Thermoelectric Copper Selenide Thin Film.

PubMed

Lin, Zhaoyang; Hollar, Courtney; Kang, Joon Sang; Yin, Anxiang; Wang, Yiliu; Shiu, Hui-Ying; Huang, Yu; Hu, Yongjie; Zhang, Yanliang; Duan, Xiangfeng

2017-06-01

A solid-state thermoelectric device is attractive for diverse technological areas such as cooling, power generation and waste heat recovery with unique advantages of quiet operation, zero hazardous emissions, and long lifetime. With the rapid growth of flexible electronics and miniature sensors, the low-cost flexible thermoelectric energy harvester is highly desired as a potential power supply. Herein, a flexible thermoelectric copper selenide (Cu 2 Se) thin film, consisting of earth-abundant elements, is reported. The thin film is fabricated by a low-cost and scalable spin coating process using ink solution with a truly soluble precursor. The Cu 2 Se thin film exhibits a power factor of 0.62 mW/(m K 2 ) at 684 K on rigid Al 2 O 3 substrate and 0.46 mW/(m K 2 ) at 664 K on flexible polyimide substrate, which is much higher than the values obtained from other solution processed Cu 2 Se thin films (<0.1 mW/(m K 2 )) and among the highest values reported in all flexible thermoelectric films to date (≈0.5 mW/(m K 2 )). Additionally, the fabricated thin film shows great promise to be integrated with the flexible electronic devices, with negligible performance change after 1000 bending cycles. Together, the study demonstrates a low-cost and scalable pathway to high-performance flexible thin film thermoelectric devices from relatively earth-abundant elements. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanoporous Ca3Co4O9 Thin Films for Transferable Thermoelectrics

PubMed Central

2018-01-01

The development of high-performance and transferable thin-film thermoelectric materials is important for low-power applications, e.g., to power wearable electronics, and for on-chip cooling. Nanoporous films offer an opportunity to improve thermoelectric performance by selectively scattering phonons without affecting electronic transport. Here, we report the growth of nanoporous Ca3Co4O9 thin films by a sequential sputtering-annealing method. Ca3Co4O9 is promising for its high Seebeck coefficient and good electrical conductivity and important for its nontoxicity, low cost, and abundance of its constituent raw materials. To grow nanoporous films, multilayered CaO/CoO films were deposited on sapphire and mica substrates by rf-magnetron reactive sputtering from elemental Ca and Co targets, followed by annealing at 700 °C to form the final phase of Ca3Co4O9. This phase transformation is accompanied by a volume contraction causing formation of nanopores in the film. The thermoelectric propoperties of the nanoporous Ca3Co4O9 films can be altered by controlling the porosity. The lowest electrical resistivity is ∼7 mΩ cm, yielding a power factor of 2.32 × 10–4 Wm–1K–2 near room temperature. Furthermore, the films are transferable from the primary mica substrates to other arbitrary polymer platforms by simple dry transfer, which opens an opportunity of low-temperature use these materials. PMID:29905306

Graphene-based in-plane micro-supercapacitors with high power and energy densities

PubMed Central

Wu, Zhong–Shuai; Parvez, Khaled; Feng, Xinliang; Müllen, Klaus

2013-01-01

Micro-supercapacitors are important on-chip micro-power sources for miniaturized electronic devices. Although the performance of micro-supercapacitors has been significantly advanced by fabricating nanostructured materials, developing thin-film manufacture technologies and device architectures, their power or energy densities remain far from those of electrolytic capacitors or lithium thin-film batteries. Here we demonstrate graphene-based in-plane interdigital micro-supercapacitors on arbitrary substrates. The resulting micro-supercapacitors deliver an area capacitance of 80.7 μF cm−2 and a stack capacitance of 17.9 F cm−3. Further, they show a power density of 495 W cm−3 that is higher than electrolytic capacitors, and an energy density of 2.5 mWh cm−3 that is comparable to lithium thin-film batteries, in association with superior cycling stability. Such microdevices allow for operations at ultrahigh rate up to 1,000 V s−1, three orders of magnitude higher than that of conventional supercapacitors. Micro-supercapacitors with an in-plane geometry have great promise for numerous miniaturized or flexible electronic applications. PMID:24042088

Graphene-based in-plane micro-supercapacitors with high power and energy densities.

PubMed

Wu, Zhong-Shuai; Parvez, Khaled; Feng, Xinliang; Müllen, Klaus

2013-01-01

Micro-supercapacitors are important on-chip micro-power sources for miniaturized electronic devices. Although the performance of micro-supercapacitors has been significantly advanced by fabricating nanostructured materials, developing thin-film manufacture technologies and device architectures, their power or energy densities remain far from those of electrolytic capacitors or lithium thin-film batteries. Here we demonstrate graphene-based in-plane interdigital micro-supercapacitors on arbitrary substrates. The resulting micro-supercapacitors deliver an area capacitance of 80.7 μF cm⁻² and a stack capacitance of 17.9 F cm⁻³. Further, they show a power density of 495 W cm⁻³ that is higher than electrolytic capacitors, and an energy density of 2.5 mWh cm⁻³ that is comparable to lithium thin-film batteries, in association with superior cycling stability. Such microdevices allow for operations at ultrahigh rate up to 1,000 V s⁻¹, three orders of magnitude higher than that of conventional supercapacitors. Micro-supercapacitors with an in-plane geometry have great promise for numerous miniaturized or flexible electronic applications.

Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride.

PubMed

Choi, David; Poudel, Nirakar; Park, Saungeun; Akinwande, Deji; Cronin, Stephen B; Watanabe, Kenji; Taniguchi, Takashi; Yao, Zhen; Shi, Li

2018-04-04

Scanning thermal microscopy measurements reveal a significant thermal benefit of including a high thermal conductivity hexagonal boron nitride (h-BN) heat-spreading layer between graphene and either a SiO 2 /Si substrate or a 100 μm thick Corning flexible Willow glass (WG) substrate. At the same power density, an 80 nm thick h-BN layer on the silicon substrate can yield a factor of 2.2 reduction of the hot spot temperature, whereas a 35 nm thick h-BN layer on the WG substrate is sufficient to obtain a factor of 4.1 reduction. The larger effect of the h-BN heat spreader on WG than on SiO 2 /Si is attributed to a smaller effective heat transfer coefficient per unit area for three-dimensional heat conduction into the thick, low-thermal conductivity WG substrate than for one-dimensional heat conduction through the thin oxide layer on silicon. Consequently, the h-BN lateral heat-spreading length is much larger on WG than on SiO 2 /Si, resulting in a larger degree of temperature reduction.

Incorporation of Mg in Free-Standing HVPE GaN Substrates

NASA Astrophysics Data System (ADS)

Zvanut, M. E.; Dashdorj, J.; Freitas, J. A.; Glaser, E. R.; Willoughby, W. R.; Leach, J. H.; Udwary, K.

2016-06-01

Mg, the only effective p-type dopant for nitrides, is well studied in thin films due to the important role of the impurity in light-emitting diodes and high-power electronics. However, there are few reports of Mg in thick free-standing GaN substrates. Here, we demonstrate successful incorporation of Mg into GaN grown by hydride vapor-phase epitaxy (HVPE) using metallic Mg as the doping source. The concentration of Mg obtained from four separate growth runs ranged between 1016 cm-3 and 1019 cm-3. Raman spectroscopy and x-ray diffraction revealed that Mg did not induce stress or perturb the crystalline quality of the HVPE GaN substrates. Photoluminescence (PL) and electron paramagnetic resonance (EPR) spectroscopies were performed to investigate the types of point defects in the crystals. The near-band-edge excitonic and shallow donor-shallow acceptor radiative recombination processes involving shallow Mg acceptors were prominent in the PL spectrum of a sample doped to 3 × 1018 cm-3, while the EPR signal was also thought to represent a shallow Mg acceptor. Detection of this signal reflects minimization of nonuniform strain obtained in the thick free-standing HVPE GaN compared with heteroepitaxial thin films.

Is Oxidized Thioredoxin a Major Trigger for Cysteine Oxidation? Clues from a Redox Proteomics Approach

PubMed Central

García-Santamarina, Sarela; Boronat, Susanna; Calvo, Isabel A.; Rodríguez-Gabriel, Miguel; Ayté, José; Molina, Henrik

2013-01-01

Abstract Cysteine oxidation mediates oxidative stress toxicity and signaling. It has been long proposed that the thioredoxin (Trx) system, which consists of Trx and thioredoxin reductase (Trr), is not only involved in recycling classical Trx substrates, such as ribonucleotide reductase, but it also regulates general cytoplasmic thiol homeostasis. To investigate such a role, we have performed a proteome-wide analysis of cells expressing or not the two components of the Trx system. We have compared the reversibly oxidized thiol proteomes of wild-type Schizosaccharomyces pombe cells with mutants lacking Trx or Trr. Specific Trx substrates are reversibly-oxidized in both strain backgrounds; however, in the absence of Trr, Trx can weakly recycle its substrates at the expense of an alternative electron donor. A massive thiol oxidation occurs only in cells lacking Trr, with 30% of all cysteine-containing peptides being reversibly oxidized; this oxidized cysteine proteome depends on the presence of Trxs. Our observations lead to the hypothesis that, in the absence of its reductase, the natural electron donor Trx becomes a powerful oxidant and triggers general thiol oxidation. Antioxid. Redox Signal. 18, 1549–1556. PMID:23121505

A novel design for a wearable thermoelectric generator based on 3D fabric structure

NASA Astrophysics Data System (ADS)

Wu, Qian; Hu, Jinlian

2017-04-01

A flexible and wearable thermoelectric generator (TEG) could enable the conversion of human body heat into electrical power, which would help to realize a self-powered wearable electronic system. To overcome the difficulty of wearing existing flexible film TEGs, a novel 3D fabric TEG structure is designed in this study. By using a 3D fabric as the substrate and yarns coated with thermoelectric materials as legs, a wearable and flexible TEG can be realized. The designed generator has a sandwich structure, similar to the classical inorganic generator, which allows the generation of a temperature difference in the fabric thickness direction, thus making it wearable and showing promising application in body heat conversion. To verify the effectiveness of the designed generator structure, a prototype was fabricated, using a locknit spacer fabric as the substrate and yarns coated with waterborne polyurethane/carbon nanotube thermoelectric composites as legs. The results suggest that the fabricated spacer fabric TEG prototype could work successfully, although the performance of this prototype is of a low level. To further improve the efficiency of the 3D fabric generator and apply it in wearable electronics in the future, highly efficient inorganic thermoelectric materials can be applied, and modifications on the conductive connections can be made.

Synthesis of AzPhchitosan-bifenthrin-PVC to protect cables against termites.

PubMed

Zhang, Lingkun; Cai, Weiwei; Chen, Wu-Ya; Zhang, Li; Hu, Kaikai; Guan, Yan-Qing

2016-03-30

The destruction of PVC cables by termites is a continuing and long-standing problem, which can lead to power leakage and power cut. Given the environmental demerits of insecticide overuse, alternative methods of addressing this problem are a highly desirable goal. In this study, we used photo-immobilization to develop a chitosan carrier system to help bifenthrin immobilize on the surface of the PVC substrate. The immobilization was analyzed using nuclear magnetic resonance (NMR), UV absorption, reverse-phase high-performance liquid chromatography (RP-HPLC), Raman absorption spectroscopy, and thermal gravimetric analysis (TGA). The surface structure and biological activity of the embedded and immobilized bifenthrin were examined using scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray photon-electron spectroscopy (XPS). Its efficacy was assessed in pest experiments. The results indicate a successful embedding and immobilization of bifenthrin. Furthermore, the chemical bonding network between AzPhchitosan, bifenthrin, and PVC is stable, guaranteeing no environmental release of bifenthrin, and also providing more efficacious protection against termites. The evidence suggests that this photo-immobilization of bifenthrin-embedded chitosan on the surface of PVC substrates is a novel and environmentally friendly technique for termite control. This paper also reports a modification of chitosan with respect to its novel application in environmental protection. Copyright © 2015 Elsevier Ltd. All rights reserved.

Modeling and Characterization of cMUT-based Devices Applied to Galvanic Isolation

NASA Astrophysics Data System (ADS)

Heller, Jacques; Boulmé, Audren; Alquier, Daniel; Ngo, Sophie; Perroteau, Marie; Certon, Domnique

This paper describes a new way of using cMUT technology: galvanic isolation for power electronics. These devices work like acoustic transformers, except that piezoelectricity is replaced by cMUT technology. Primary and secondary circuits are two cMUT-based transducers respectively layered on each side of a silicon substrate, through which the ultrasonic triggering signal is transmitted. A specific model based on a commercial finite element code was implemented to simulate these devices. A particular attention was paid on the modeling of the cMUT/substrate coupling which is a key feature for the intended application. First experimental results performed for model validation are presented here and discussed.

All-inorganic large-area low-cost and durable flexible perovskite solar cells using copper foil as a substrate.

PubMed

Abdollahi Nejand, B; Nazari, P; Gharibzadeh, S; Ahmadi, V; Moshaii, A

2017-01-05

Here, a low-cost perovskite solar cell using CuI and ZnO as the respective inorganic hole and electron transport layers is introduced. Copper foil is chosen as a cheap and low-weight conductive substrate which has a similar work function to ITO. Besides, copper foil is an interesting copper atom source for the growth of the upper cuprous iodide layer on copper foil. A spray coating of a transparent silver nanowire electrode is used as a top contact. The prepared device shows a maximum power conversion efficiency of 12.80% and long-term durability providing an environmentally and market friendly perovskite solar cell.

Production of electricity from acetate or butyrate using a single-chamber microbial fuel cell.

PubMed

Liu, Hong; Cheng, Shaoan; Logan, Bruce E

2005-01-15

Hydrogen can be recovered by fermentation of organic material rich in carbohydrates, but much of the organic matter remains in the form of acetate and butyrate. An alternative to methane production from this organic matter is the direct generation of electricity in a microbial fuel cell (MFC). Electricity generation using a single-chambered MFC was examined using acetate or butyrate. Power generated with acetate (800 mg/L) (506 mW/m2 or 12.7 mW/ L) was up to 66% higher than that fed with butyrate (1000 mg/L) (305 mW/m2 or 7.6 mW/L), demonstrating that acetate is a preferred aqueous substrate for electricity generation in MFCs. Power output as a function of substrate concentration was well described by saturation kinetics, although maximum power densities varied with the circuit load. Maximum power densities and half-saturation constants were Pmax = 661 mW/m2 and Ks = 141 mg/L for acetate (218 ohms) and Pmax = 349 mW/m2 and Ks = 93 mg/L for butyrate (1000 ohms). Similar open circuit potentials were obtained in using acetate (798 mV) or butyrate (795 mV). Current densities measured for stable power outputwere higher for acetate (2.2 A/m2) than those measured in MFCs using butyrate (0.77 A/m2). Cyclic voltammograms suggested that the main mechanism of power production in these batch tests was by direct transfer of electrons to the electrode by bacteria growing on the electrode and not by bacteria-produced mediators. Coulombic efficiencies and overall energy recovery were 10-31 and 3-7% for acetate and 8-15 and 2-5% for butyrate, indicating substantial electron and energy losses to processes other than electricity generation. These results demonstrate that electricity generation is possible from soluble fermentation end products such as acetate and butyrate, but energy recoveries should be increased to improve the overall process performance.

A membraneless biofuel cell powered by ethanol and alcoholic beverage.

PubMed

Deng, Liu; Shang, Li; Wen, Dan; Zhai, Junfeng; Dong, Shaojun

2010-09-15

In this study, we reported on the construction of a stable single-chamber ethanol/O(2) biofuel cell harvesting energy from the ethanol and alcoholic beverage. We prepared a composite film which consisted of partially sulfonated (3-mercaptopropyl)-trimethoxysilane sol-gel (PSSG) and chitosan (CHI). The combination of ion-exchange capacity sol-gel and biopolymer chitosan not only provided the attached sites for mediator MDB and AuNPs to facilitate the electron transfer along the substrate reaction, but also gave the suitable microenvironment to retain the enzyme activity in long term. The ethanol bioanode was constructed with the film coimmobilized dehydrogenase (ADH), Meldola's blue (MDB) and gold nanoparticles (AuNPs). The MDB/AuNPs/PSSG-CHI-ADH composite modified electrode showed prominent electrocatalytic activity towards the oxidation of ethanol. The oxygen biocathode consisted of laccase and AuNPs immobilized on the PSSG-CHI composite membrane. The AuNPs/PSSG-CHI-laccase modified electrode catalyzed four-electron reduction of O(2) to water, without any mediator. The assembled single-chamber biofuel cell exhibited good stability and power output towards ethanol. The open-circuit voltage of this biofuel cell was 860 mV. The maximum power density of the biofuel cell was 1.56 mWcm(-2) at 550 mV. Most interestingly, this biofuel cell showed the similar performance when the alcoholic beverage acted as the fuel. When this biofuel cell ran with wine as the fuel, the maximum power output density was 3.21 mAcm(-2) and the maximum power density was 1.78 mWcm(-2) at 680 mV of the cell voltage. Our system exhibited stable and high power output in the multi-component substrate condition. This cell has great potential for the development and practical application of bioethanol fuel cell. Copyright 2010 Elsevier B.V. All rights reserved.

Redox-coupled proton transfer mechanism in nitrite reductase revealed by femtosecond crystallography.

PubMed

Fukuda, Yohta; Tse, Ka Man; Nakane, Takanori; Nakatsu, Toru; Suzuki, Mamoru; Sugahara, Michihiro; Inoue, Shigeyuki; Masuda, Tetsuya; Yumoto, Fumiaki; Matsugaki, Naohiro; Nango, Eriko; Tono, Kensuke; Joti, Yasumasa; Kameshima, Takashi; Song, Changyong; Hatsui, Takaki; Yabashi, Makina; Nureki, Osamu; Murphy, Michael E P; Inoue, Tsuyoshi; Iwata, So; Mizohata, Eiichi

2016-03-15

Proton-coupled electron transfer (PCET), a ubiquitous phenomenon in biological systems, plays an essential role in copper nitrite reductase (CuNiR), the key metalloenzyme in microbial denitrification of the global nitrogen cycle. Analyses of the nitrite reduction mechanism in CuNiR with conventional synchrotron radiation crystallography (SRX) have been faced with difficulties, because X-ray photoreduction changes the native structures of metal centers and the enzyme-substrate complex. Using serial femtosecond crystallography (SFX), we determined the intact structures of CuNiR in the resting state and the nitrite complex (NC) state at 2.03- and 1.60-Å resolution, respectively. Furthermore, the SRX NC structure representing a transient state in the catalytic cycle was determined at 1.30-Å resolution. Comparison between SRX and SFX structures revealed that photoreduction changes the coordination manner of the substrate and that catalytically important His255 can switch hydrogen bond partners between the backbone carbonyl oxygen of nearby Glu279 and the side-chain hydroxyl group of Thr280. These findings, which SRX has failed to uncover, propose a redox-coupled proton switch for PCET. This concept can explain how proton transfer to the substrate is involved in intramolecular electron transfer and why substrate binding accelerates PCET. Our study demonstrates the potential of SFX as a powerful tool to study redox processes in metalloenzymes.

Photoelectrochemically driven self-assembly method

DOEpatents

Nielson, Gregory N.; Okandan, Murat

2017-01-17

Various technologies described herein pertain to assembling electronic devices into a microsystem. The electronic devices are disposed in a solution. Light can be applied to the electronic devices in the solution. The electronic devices can generate currents responsive to the light applied to the electronic devices in the solution, and the currents can cause electrochemical reactions that functionalize regions on surfaces of the electronic devices. Additionally or alternatively, the light applied to the electronic devices in the solution can cause the electronic devices to generate electric fields, which can orient the electronic devices and/or induce movement of the electronic devices with respect to a receiving substrate. Further, electrodes on a receiving substrate can be biased to attract and form connections with the electronic devices having the functionalized regions on the surfaces. The microsystem can include the receiving substrate and the electronic devices connected to the receiving substrate.

Low energy electron catalyst: the electronic origin of catalytic strategies.

PubMed

Davis, Daly; Sajeev, Y

2016-10-12

Using a low energy electron (LEE) as a catalyst, the electronic origin of the catalytic strategies corresponding to substrate selectivity, reaction specificity and reaction rate enhancement is investigated for a reversible unimolecular elementary reaction. An electronic energy complementarity between the catalyst and the substrate molecule is the origin of substrate selectivity and reaction specificity. The electronic energy complementarity is induced by tuning the electronic energy of the catalyst. The energy complementarity maximizes the binding forces between the catalyst and the molecule. Consequently, a new electronically metastable high-energy reactant state and a corresponding new low barrier reaction path are resonantly created for a specific reaction of the substrate through the formation of a catalyst-substrate transient adduct. The LEE catalysis also reveals a fundamental structure-energy correspondence in the formation of the catalyst-substrate transient adduct. Since the energy complementarities corresponding to the substrate molecules of the forward and the backward steps of the reversible reactions are not the same due to their structural differences, the LEE catalyst exhibits a unique one-way catalytic strategy, i.e., the LEE catalyst favors the reversible reaction more effectively in one direction. A characteristic stronger binding of the catalyst to the transition state of the reaction than in the initial reactant state and the final product state is the molecular origin of barrier lowering.

Adsorbates in a Box: Titration of Substrate Electronic States

NASA Astrophysics Data System (ADS)

Cheng, Zhihai; Wyrick, Jonathan; Luo, Miaomiao; Sun, Dezheng; Kim, Daeho; Zhu, Yeming; Lu, Wenhao; Kim, Kwangmoo; Einstein, T. L.; Bartels, Ludwig

2010-08-01

Nanoscale confinement of adsorbed CO molecules in an anthraquinone network on Cu(111) with a pore size of ≈4nm arranges the CO molecules in a shell structure that coincides with the distribution of substrate confined electronic states. Molecules occupy the states approximately in the sequence of rising electron energy. Despite the sixfold symmetry of the pore boundary itself, the adsorbate distribution adopts the threefold symmetry of the network-substrate system, highlighting the importance of the substrate even for such quasi-free-electron systems.

InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion

NASA Astrophysics Data System (ADS)

Kim, T. W.; Albert, B. R.; Kimerling, L. C.; Michel, J.

2018-02-01

InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2-5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 104-3 × 107 cm-2. We demonstrate that the open circuit voltage (Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 106 cm-2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ˜0.5 Sun. The estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9-2.4 eV varies from 16.6% to 34.3%.

MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics

DOE PAGES

Hong, Wen-Chiang; Ku, Chieh-Jen; Li, Rui; ...

2016-10-10

Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. But, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. We designed devices with unique ring-type structures andmore » use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass.« less

Growth and structure of Bi 0.5(Na 0.7K 0.2Li 0.1) 0.5TiO 3 thin films prepared by pulsed laser deposition technique

NASA Astrophysics Data System (ADS)

Lu, Lei; Xiao, Dingquan; Lin, Dunmin; Zhang, Yongbin; Zhu, Jianguo

2009-02-01

Bi 0.5(Na 0.7K 0.2Li 0.1) 0.5TiO 3 (BNKLT) thin films were prepared on Pt/Ti/SiO 2/Si substrates by pulsed laser deposition (PLD) technique. The films prepared were examined by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The effects of the processing parameters, such as oxygen pressure, substrate temperature and laser power, on the crystal structure, surface morphology, roughness and deposition rates of the thin films were investigated. It was found that the substrate temperature of 600 °C and oxygen pressure of 30 Pa are the optimized technical parameters for the growth of textured film, and all the thin films prepared have granular structure, homogeneous grain size and smooth surfaces.

MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics.

PubMed

Hong, Wen-Chiang; Ku, Chieh-Jen; Li, Rui; Abbaslou, Siamak; Reyes, Pavel; Wang, Szu-Ying; Li, Guangyuan; Lu, Ming; Sheng, Kuang; Lu, Yicheng

2016-10-10

Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. However, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. The devices are designed with unique ring-type structures and use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass.

Epitaxial Ge Solar Cells Directly Grown on Si (001) by MOCVD Using Isobutylgermane

NASA Astrophysics Data System (ADS)

Kim, Youngjo; Kim, Kangho; Lee, Jaejin; Kim, Chang Zoo; Kang, Ho Kwan; Park, Won-Kyu

2018-03-01

Epitaxial Ge layers have been grown on Si (001) substrates by metalorganic chemical vapor deposition (MOCVD) using an isobutylgermane (IBuGe) metalorganic source. Low and high temperature two-step growth and post annealing techniques are employed to overcome the lattice mismatch problem between Ge and Si. It is demonstrated that high quality Ge epitaxial layers can be grown on Si (001) by using IBuGe with surface RMS roughness of 2 nm and an estimated threading dislocation density of 4.9 × 107 cm -2. Furthermore, single-junction Ge solar cells have been directly grown on Si substrates with an in situ MOCVD growth. The epitaxial Ge p- n junction structures are investigated with transmission electron microscopy and electrochemical C- V measurements. As a result, a power conversion efficiency of 1.69% was achieved for the Ge solar cell directly grown on Si substrate under AM1.5G condition.

MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics

PubMed Central

Hong, Wen-Chiang; Ku, Chieh-Jen; Li, Rui; Abbaslou, Siamak; Reyes, Pavel; Wang, Szu-Ying; Li, Guangyuan; Lu, Ming; Sheng, Kuang; Lu, Yicheng

2016-01-01

Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. However, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. The devices are designed with unique ring-type structures and use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass. PMID:27721484

Additive Manufacturing of Nickel-Base Superalloy IN100 Through Scanning Laser Epitaxy

NASA Astrophysics Data System (ADS)

Basak, Amrita; Das, Suman

2018-01-01

Scanning laser epitaxy (SLE) is a laser powder bed fusion (LPBF)-based additive manufacturing process that uses a high-power laser to consolidate metal powders facilitating the fabrication of three-dimensional objects. In the present study, SLE is used to produce samples of IN100, a high-γ' non-weldable nickel-base superalloy on similar chemistry substrates. A thorough analysis is performed using various advanced material characterization techniques such as high-resolution optical microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, and Vickers microhardness measurements to characterize and compare the quality of the SLE-fabricated IN100 deposits with the investment cast IN100 substrates. The results show that the IN100 deposits have a finer γ/γ' microstructure, weaker elemental segregation, and higher microhardness compared with the substrate. Through this study, it is demonstrated that the SLE process has tremendous potential in the repair and manufacture of gas turbine hot-section components.

ZnO Thin Film Electronics for More than Displays

NASA Astrophysics Data System (ADS)

Ramirez, Jose Israel

Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow discharging time constants. Finally, to circumvent fabrication challenges on predetermined complex shapes, like curved mirror optics, a technique to transfer electronics from a rigid substrate to a flexible substrate is used. This technique allows various thin films, regardless of their deposition temperature, to be transferred to flexible substrates. Finally, ultra-low power operation of ZnO TFT gas sensors was demonstrated. The ZnO ozone sensors were optimized to operate with excellent electrical stability in ambient conditions, without using elevated temperatures, while still providing good gas sensitivity. This was achieved by using a post-deposition anneal and by partially passivating the contact regions while leaving the semiconductor sensing area open to the ambient. A novel technique to reset the gas sensor using periodic pulsing of a UV light over the sensor results in less than 25 milliseconds recovery time. A pathway to achieve gas selectivity by using organic thin-film layers as filters deposited over the gas sensors tis demonstrated. The ZnO ozone sensor TFTs and the UV light operate at room temperature with an average power below 1 muW.

Printed electronic on flexible and glass substrates

NASA Astrophysics Data System (ADS)

Futera, Konrad; Jakubowska, Małgorzata; Kozioł, Grażyna

2010-09-01

Organic electronics is a platform technology that enables multiple applications based on organic electronics but varied in specifications. Organic electronics is based on the combination of new materials and cost-effective, large area production processes that provide new fields of application. Organic electronic by its size, weight, flexibility and environmental friendliness electronics enables low cost production of numerous electrical components and provides for such promising fields of application as: intelligent packaging, low cost RFID, flexible solar cells, disposable diagnostic devices or games, and printed batteries [1]. The paper presents results of inkjetted electronics elements on flexible and glass substrates. The investigations was target on characterizing shape, surface and geometry of printed structures. Variety of substrates were investigated, within some, low cost, non specialized substrate, design for other purposes than organic electronic.

Growth of diamond by RF plasma-assisted chemical vapor deposition

NASA Technical Reports Server (NTRS)

Meyer, Duane E.; Ianno, Natale J.; Woollam, John A.; Swartzlander, A. B.; Nelson, A. J.

1988-01-01

A system has been designed and constructed to produce diamond particles by inductively coupled radio-frequency, plasma-assisted chemical vapor deposition. This is a low-pressure, low-temperature process used in an attempt to deposit diamond on substrates of glass, quartz, silicon, nickel, and boron nitride. Several deposition parameters have been varied including substrate temperature, gas concentration, gas pressure, total gas flow rate, RF input power, and deposition time. Analytical methods employed to determine composition and structure of the deposits include scanning electron microscopy, absorption spectroscopy, scanning Auger microprobe spectroscopy, and Raman spectroscopy. Analysis indicates that particles having a thin graphite surface, as well as diamond particles with no surface coatings, have been deposited. Deposits on quartz have exhibited optical bandgaps as high as 4.5 eV. Scanning electron microscopy analysis shows that particles are deposited on a pedestal which Auger spectroscopy indicates to be graphite. This is a phenomenon that has not been previously reported in the literature.

Advanced Microstructural Study of Suspension Plasma Sprayed Hydroxyapatite Coatings

NASA Astrophysics Data System (ADS)

Podlesak, Harry; Pawlowski, Lech; D'Haese, Romain; Laureyns, Jacky; Lampke, Thomas; Bellayer, Severine

2010-03-01

Fine, home-synthesized, hydroxyapatite powder was formulated with water and alcohol to obtain a suspension used to plasma spray coatings onto a titanium substrate. The deposition process was optimized using statistical design of 2 n experiments with two variables: spray distance and electric power input to plasma. X-ray diffraction (XRD) was used to determine quantitatively the phase composition of obtained deposits. Raman microscopy and electron probe microanalysis (EPMA) enabled localization of the phases in different positions of the coating cross sections. Transmission electron microscopic (TEM) study associated with energy-dispersive x-ray spectroscopy (EDS) enabled visualization and analysis of a two-zone microstructure. One zone contained crystals of hydroxyapatite, tetracalcium phosphate, and a phase rich in calcium oxide. This zone included lamellas, usually observed in thermally sprayed coatings. The other zone contained fine hydroxyapatite grains that correspond to nanometric and submicrometric solids from the suspension that were agglomerated and sintered in the cold regions of plasma jet and on the substrate.

Metalorganic Chemical Vapor Deposition of Ruthenium-Doped Diamond like Carbon Films

NASA Technical Reports Server (NTRS)

Sunkara, M. K.; Ueno, M.; Lian, G.; Dickey, E. C.

2001-01-01

We investigated metalorganic precursor deposition using a Microwave Electron Cyclotron Resonance (ECR) plasma for depositing metal-doped diamondlike carbon films. Specifically, the deposition of ruthenium doped diamondlike carbon films was investigated using the decomposition of a novel ruthenium precursor, Bis(ethylcyclopentadienyl)-ruthenium (Ru(C5H4C2H5)2). The ruthenium precursor was introduced close to the substrate stage. The substrate was independently biased using an applied RF power. Films were characterized using Fourier Transform Infrared Spectroscopy (FTIR), Transmission Electron Microscopy (TEM) and Four Point Probe. The conductivity of the films deposited using ruthenium precursor showed strong dependency on the deposition parameters such as pressure. Ruthenium doped sample showed the presence of diamond crystallites with an average size of approx. 3 nm while un-doped diamondlike carbon sample showed the presence of diamond crystallites with an average size of 11 nm. TEM results showed that ruthenium was atomically dispersed within the amorphous carbon network in the films.

Functional integrity of flexible n-channel metal-oxide-semiconductor field-effect transistors on a reversibly bistable platform

NASA Astrophysics Data System (ADS)

Alfaraj, Nasir; Hussain, Aftab M.; Torres Sevilla, Galo A.; Ghoneim, Mohamed T.; Rojas, Jhonathan P.; Aljedaani, Abdulrahman B.; Hussain, Muhammad M.

2015-10-01

Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal-oxide-semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.

Substrate Effects for Atomic Chain Electronics

NASA Technical Reports Server (NTRS)

Yamada, Toshishige; Saini, Subhash (Technical Monitor)

1998-01-01

A substrate for future atomic chain electronics, where adatoms are placed at designated positions and form atomically precise device components, is studied theoretically. The substrate has to serve as a two-dimensional template for adatom mounting with a reasonable confinement barrier and also provide electronic isolation, preventing unwanted coupling between independent adatom structures. For excellent structural stability, we demand chemical bonding between the adatoms and substrate atoms, but then good electronic isolation may not be guaranteed. Conditions are clarified for good isolation. Because of the chemical bonding, fundamental adatom properties are strongly influenced: a chain with group IV adatoms having two chemical bonds, or a chain with group III adatoms having one chemical bond is semiconducting. Charge transfer from or to the substrate atoms brings about unintentional doping, and the electronic properties have to be considered for the entire combination of the adatom and substrate systems even if the adatom modes are well localized at the surface.

Bio-Nanobattery Development and Characterization

NASA Technical Reports Server (NTRS)

King, Glen C.; Choi, Sang H.; Chu, Sang-Hyon; Kim, Jae-Woo; Watt, Gerald D.; Lillehei, Peter T.; Park, Yeonjoon; Elliott, James R.

2005-01-01

A bio-nanobattery is an electrical energy storage device that utilizes organic materials and processes on an atomic, or nanometer-scale. The bio-nanobattery under development at NASA s Langley Research Center provides new capabilities for electrical power generation, storage, and distribution as compared to conventional power storage systems. Most currently available electronic systems and devices rely on a single, centralized power source to supply electrical power to a specified location in the circuit. As electronic devices and associated components continue to shrink in size towards the nanometer-scale, a single centralized power source becomes impractical. Small systems, such as these, will require distributed power elements to reduce Joule heating, to minimize wiring quantities, and to allow autonomous operation of the various functions performed by the circuit. Our research involves the development and characterization of a bio-nanobattery using ferritins reconstituted with both an iron core (Fe-ferritin) and a cobalt core (Co-ferritin). Synthesis and characterization of the Co-ferritin and Fe-ferritin electrodes were performed, including reducing capability and the half-cell electrical potentials. Electrical output of nearly 0.5 V for the battery cell was measured. Ferritin utilizing other metallic cores were also considered to increase the overall electrical output. Two dimensional ferritin arrays were produced on various substrates to demonstrate the feasibility of a thin-film nano-scaled power storage system for distributed power storage applications. The bio-nanobattery will be ideal for nanometerscaled electronic applications, due to the small size, high energy density, and flexible thin-film structure. A five-cell demonstration article was produced for concept verification and bio-nanobattery characterization. Challenges to be addressed include the development of a multi-layered thin-film, increasing the energy density, dry-cell bionanobattery development, and selection of ferritin core materials to allow the broadest range of applications. The potential applications for the distributed power system include autonomously-operating intelligent chips, flexible thin-film electronic circuits, nanoelectromechanical systems (NEMS), ultra-high density data storage devices, nanoelectromagnetics, quantum electronic devices, biochips, nanorobots for medical applications and mechanical nano-fabrication, etc.

Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate.

PubMed

Schmitt, S W; Brönstrup, G; Shalev, G; Srivastava, S K; Bashouti, M Y; Döhler, G H; Christiansen, S H

2014-07-21

Vertically aligned silicon nanowire (SiNW) diodes are promising candidates for the integration into various opto-electronic device concepts for e.g. sensing or solar energy conversion. Individual SiNW p-n diodes have intensively been studied, but to date an assessment of their device performance once integrated on a silicon substrate has not been made. We show that using a scanning electron microscope (SEM) equipped with a nano-manipulator and an optical fiber feed-through for tunable (wavelength, power using a tunable laser source) sample illumination, the dark and illuminated current-voltage (I-V) curve of individual SiNW diodes on the substrate wafer can be measured. Surprisingly, the I-V-curve of the serially coupled system composed of SiNW/wafers is accurately described by an equivalent circuit model of a single diode and diode parameters like series and shunting resistivity, diode ideality factor and photocurrent can be retrieved from a fit. We show that the photo-carrier collection efficiency (PCE) of the integrated diode illuminated with variable wavelength and intensity light directly gives insight into the quality of the device design at the nanoscale. We find that the PCE decreases for high light intensities and photocurrent densities, due to the fact that considerable amounts of photo-excited carriers generated within the substrate lead to a decrease in shunting resistivity of the SiNW diode and deteriorate its rectification. The PCE decreases systematically for smaller wavelengths of visible light, showing the possibility of monitoring the effectiveness of the SiNW device surface passivation using the shown measurement technique. The integrated device was pre-characterized using secondary ion mass spectrometry (SIMS), TCAD simulations and electron beam induced current (EBIC) measurements to validate the properties of the characterized material at the single SiNW diode level.

Effect of 3C-SiC intermediate layer in GaN—based light emitting diodes grown on Si(111) substrate

NASA Astrophysics Data System (ADS)

Zhu, Youhua; Wang, Meiyu; Li, Yi; Tan, Shuxin; Deng, Honghai; Guo, Xinglong; Yin, Haihong; Egawa, Takashi

2017-03-01

GaN-based light emitting diodes (LEDs) have been grown by metalorganic chemical vapor deposition on Si(111) substrate with and without 3C-SiC intermediate layer (IL). Structural property has been characterized by means of atomic force microscope, X-ray diffraction, and transmission electron microscope measurements. It has been revealed that a significant improvement in crystalline quality of GaN and superlattice epitaxial layers can be achieved by using 3C-SiC as IL. Regarding of electrical and optical characteristics, it is clearly observed that the LEDs with its IL have a smaller leakage current and higher light output power comparing with the LEDs without IL. The better performance of LEDs using 3C-SiC IL can be contributed to both of the improvements in epitaxial layers quality and light extraction efficiency. As a consequence, in terms of optical property, a double enhancement of the light output power and external quantum efficiency has been realized.

Highly Conductive Aromatic Functionalized Multi-Walled Carbon Nanotube for Inkjet Printable High Performance Supercapacitor Electrodes

PubMed Central

Attri, Pankaj

2015-01-01

We report the functionalization of multiwalled carbon nanotubes (MWCNT) via the 1,3-dipolar [3+2] cycloaddition of aromatic azides, which resulted in a detangled CNT as shown by transmission electron microscopy (TEM). Carboxylic moieties (-COOH) on aromatic azide result in highly stable aqueous dispersion (max. conc. ~ 10 mg/mL H2O), making the suitable for inkjet printing. Printed patterns on polyethylene terephthalate (PET) flexible substrate exhibit low sheet resistivity ~65 Ω. cm, which is attributed to enhanced conductivity. Fabricated Supercapacitors (SC) assembled using these printed substrates exhibit good electrochemical performance in organic as well as aqueous electrolytes. High energy and power density (57.8 Wh/kg and 0.85 kW/kg) in 1M H2SO4 aqueous electrolyte demonstrate the excellent performance of the proposed supercapacitor. Capacitive retention varies from ~85–94% with columbic efficiency ~95% after 1000 charge/discharge cycles in different electrolytes, demonstrating the excellent potential of the device for futuristic power applications. PMID:26153688

Laser Cladding of TiAl Intermetallic Alloy on Ti6Al4V -Process Optimization and Properties

NASA Astrophysics Data System (ADS)

Cárcel, B.; Serrano, A.; Zambrano, J.; Amigó, V.; Cárcel, A. C.

In order to improve Ti6Al4V high-temperature resistance and its tribological properties, the deposition of TiAl intermetallic (Ti-48Al-2Cr-2Nb) coating on a Ti6Al4V substrate by coaxial laser cladding has been investigated. Laser cladding by powder injection is an emerging laser material processing technique that allows the deposition of thick protective coatings on substrates,using a high power laser beam as heat source. Laser cladding is a multiple-parameter-dependent process. The main process parameters involved (laser power, powder feeding rate, scanning speed and preheating temperature) has been optimized. The microstructure and geometrical quantities (clad area and dilution) of the coating was characterized by optical microscopy and scanning electron microscopy (SEM). In addition the cooling rate of the clad during the process was measured by a dual-color pyrometer. This result has been related to defectology and mechanical coating properties.

Printable Silicon Nanomembranes for Solar-Powered, Bi-Directional Phased-Array-Antenna Communication System on Flexible Substrates

DTIC Science & Technology

2013-04-01

Identification (RFID), Large Area Flexible Displays, Electronic Paper, Bio - Sensors , Large Area Conformal and Flexible Antennas, Smart and Interactive Textiles...Lepeshkin, R. W. Boyd, C. Chase, and J. E. Fajardo, “An environmental sensor based on an integrated optical whispering gallery mode disk resonator ...Ubiquitous Sensor Networks (USN), Vehicle Clickers Readers, Real Time Locating Systems, Lighting, Photovoltaics etc. FA9550-11-C-0014 STTR Phase II

Flexible and stretchable lithium-ion batteries and supercapacitors based on electrically conducting carbon nanotube fiber springs.

PubMed

Zhang, Ye; Bai, Wenyu; Cheng, Xunliang; Ren, Jing; Weng, Wei; Chen, Peining; Fang, Xin; Zhang, Zhitao; Peng, Huisheng

2014-12-22

The construction of lightweight, flexible and stretchable power systems for modern electronic devices without using elastic polymer substrates is critical but remains challenging. We have developed a new and general strategy to produce both freestanding, stretchable, and flexible supercapacitors and lithium-ion batteries with remarkable electrochemical properties by designing novel carbon nanotube fiber springs as electrodes. These springlike electrodes can be stretched by over 300 %. In addition, the supercapacitors and lithium-ion batteries have a flexible fiber shape that enables promising applications in electronic textiles. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry

PubMed Central

Förster, Arno; Stock, Jürgen; Montanari, Simone; Lepsa, Mihail Ion; Lüth, Hans

2006-01-01

GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.

Field Effect Transistor Behavior in Electrospun Polyaniline/Polyethylene Oxide Nanofibers

NASA Technical Reports Server (NTRS)

Miranda, Felix A.; Theofylaktos, Noulle; Robinson, Daryl C.; Mueller, Carl H.; Pinto, Nicholas J.

2004-01-01

Novel translators and logic devices based on nanotechnology concepts are under intense development. The potential for ultra-low power circuitry makes nanotechnology attractive for applications such as digital electronics and sensors. Furthermore, the ability to form devices on flexible substrates expands the range of applications where electronic circuitry can be introduced. For NASA, nonotechndogy offers opportunities for increased onboard data processing and thus autonomous decision-making ability, ad novel sensors that detect and respond to external stimuli with few oversight requirements. The goat of this work is to demonstrate transistor behavior in polyaniline/ polyethylene oxide nanofibers, thus creating a foundation for future logic devices.

Cellulose Nanofiber Composite Substrates for Flexible Electronics

Treesearch

Ronald Sabo; Jung-Hun Seo; Zhenqiang Ma

2012-01-01

Flexible electronics have a large number of potential applications including malleable displays and wearable computers. The current research into high-speed, flexible electronic substrates employs the use of plastics for the flexible substrate, but these plastics typically have drawbacks, such as high thermal expansion coefficients. Transparent films made from...

Chapter 2.3 Cellulose Nanofibril Composite Substrates for Flexible Electronics

Treesearch

Ronald Sabo; Jung-Hun Seo; Zhenqiang Ma

2013-01-01

Flexible electronics have a large number of potential applications, including malleable displays and wearable computers. Current research into high-speed, flexible electronic substrates uses plastics for the flexible substrate, but these plastics typically have drawbacks, such as high thermal expansion coefficients. Transparent films made from cellulose...

Betavoltaic device in por-SiC/Si C-Nuclear Energy Converter

NASA Astrophysics Data System (ADS)

Akimchenko, Alina; Chepurnov, Victor; Dolgopolov, Mikhail; Gurskaya, Albina; Kuznetsov, Oleg; Mashnin, Alikhan; Radenko, Vitaliy; Radenko, Alexander; Surnin, Oleg; Zanin, George

2017-10-01

The miniature and low-power devices with long service life in hard operating conditions like the Carbon-14 beta-decay energy converters indeed as eternal resource for integrated MEMS and NEMS are considered. Authors discuss how to create the power supply for MEMS/NEMS devices, based on porous SiC/Si structure, which are tested to be used as the beta-decay energy converters of radioactive C-14 into electrical energy. This is based on the silicon carbide obtaining by self-organizing mono 3C-SiC endotaxy on the Si substrate. The new idea is the C-14 atoms including in molecules in the silicon carbide porous structure by this technology, which will increase the efficiency of the converter due to the greater intensity of electron-hole pairs generation rate in the space charge region. The synthesis of C-14 can be also performed by using the electronically controlled magneto-optic chamber.

Silicon etching of difluoromethane atmospheric pressure plasma jet combined with its spectroscopic analysis

NASA Astrophysics Data System (ADS)

Sung, Yu-Ching; Wei, Ta-Chin; Liu, You-Chia; Huang, Chun

2018-06-01

A capacitivly coupled radio-frequency double-pipe atmospheric-pressure plasma jet is used for etching. An argon carrier gas is supplied to the plasma discharge jet; and CH2F2 etch gas is inserted into the plasma discharge jet, near the silicon substrate. Silicon etchings rate can be efficiently-controlled by adjusting the feeding etching gas composition and plasma jet operating parameters. The features of silicon etched by the plasma discharge jet are discussed in order to spatially spreading plasma species. Electronic excitation temperature and electron density are detected by increasing plasma power. The etched silicon profile exhibited an anisotropic shape and the etching rate was maximum at the total gas flow rate of 4500 sccm and CH2F2 concentration of 11.1%. An etching rate of 17 µm/min was obtained at a plasma power of 100 W.

Experimental and analytical parametric study of single-crystal unimorph beams for vibration energy harvesting.

PubMed

Karami, M Amin; Bilgen, Onur; Inman, Daniel J; Friswell, Michael I

2011-07-01

This research presents an experimental and theoretical energy harvesting characterization of beam-like, uniform cross-section, unimorph structures employing single-crystal piezoelectrics. Different piezoelectric materials, substrates, and configurations are examined to identify the best design configuration for lightweight energy harvesting devices for low-power applications. Three types of piezoelectrics (singlecrystal PMN-PZT, polycrystalline PZT-5A, and PZT-5H-type monolithic ceramics) are evaluated in a unimorph cantilevered beam configuration. The devices have been excited by harmonic base acceleration. All of the experimental characteristics have been used to validate an exact electromechanical model of the harvester. The study shows the optimum choice of substrate material for single-crystal piezoelectric energy harvesting. Comparison of energy scavengers with stainless steel substrates reveals that single-crystal harvesters produce superior power compared with polycrystalline devices. To further optimize the power harvesting, we study the relation between the thickness of the substrate and the power output for different substrate materials. The relation between power and substrate thickness profoundly varies among different substrate materials. The variation is understood by examining the change of mechanical transmissibility and the variations of the coupling figure of merit of the harvesters with thickness ratio. The investigation identifies the optimal thickness of the substrate for different substrate materials. The study also shows that the densities of the substrates and their mechanical damping coefficients have significant effects on the power output.

Hole doping, hybridization gaps, and electronic correlation in graphene on a platinum substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hwang, Jinwoong; Hwang, Hwihyeon; Kim, Min-Jeong

The interaction between graphene and substrates provides a viable route to enhance the functionality of both materials. Depending on the nature of electronic interaction at the interface, the electron band structure of graphene is strongly influenced, allowing us to make use of the intrinsic properties of graphene or to design additional functionalities in graphene. In this paper, we present an angle-resolved photoemission study on the interaction between graphene and a platinum substrate. The formation of an interface between graphene and platinum leads to a strong deviation in the electronic structure of graphene not only from its freestanding form but alsomore » from the behavior observed on typical metals. Finally, the combined study on the experimental and theoretical electron band structure unveils the unique electronic properties of graphene on a platinum substrate, which singles out graphene/platinum as a model system investigating graphene on a metallic substrate with strong interaction.« less

Hole doping, hybridization gaps, and electronic correlation in graphene on a platinum substrate

DOE PAGES

Hwang, Jinwoong; Hwang, Hwihyeon; Kim, Min-Jeong; ...

2017-08-02

The interaction between graphene and substrates provides a viable route to enhance the functionality of both materials. Depending on the nature of electronic interaction at the interface, the electron band structure of graphene is strongly influenced, allowing us to make use of the intrinsic properties of graphene or to design additional functionalities in graphene. In this paper, we present an angle-resolved photoemission study on the interaction between graphene and a platinum substrate. The formation of an interface between graphene and platinum leads to a strong deviation in the electronic structure of graphene not only from its freestanding form but alsomore » from the behavior observed on typical metals. Finally, the combined study on the experimental and theoretical electron band structure unveils the unique electronic properties of graphene on a platinum substrate, which singles out graphene/platinum as a model system investigating graphene on a metallic substrate with strong interaction.« less

Molecular-beam heteroepitaxial growth and characterization of wide-band-gap semiconductor films and devices

NASA Astrophysics Data System (ADS)

Piquette, Eric Charles

The thesis consists of two parts. Part I describes work on the molecular beam epitaxial (MBE) growth of GaN, AlN, and AlxGa 1-xN alloys, as well as efforts in the initial technical development and demonstration of nitride-based high power electronic devices. The major issues pertaining to MBE growth are discussed, including special requirements of the growth system, substrates, film nucleation, n - and p-type doping, and the dependence of film quality on growth parameters. The GaN films were characterized by a variety of methods, including high resolution x-ray diffraction, photoluminescence, and Hall effect measurement. It is found that the film polarity and extended defect density as well as quality of photoluminescence and electrical transport properties depend crucially on how the nitride layer is nucleated on the substrate and how the subsequent film surface morphology evolves, which can be controlled by the growth conditions. A technique is proposed and demonstrated that utilizes the control of morphology evolution to reduce defect density and improve the structural quality of MBE GaN films. In addition to growth, the design and processing of high voltage GaN Schottky diodes is presented, as well as an experimental study of sputter-deposited ohmic and rectifying metal contacts to GaN. Simple models for high power devices, based on materials properties such as minority carrier diffusion length and critical electric breakdown field, are used to estimate the voltage standoff capability, current carrying capacity, and maximum operating frequency of unipolar and bipolar GaN power devices. The materials and transport properties of GaN pertinent to high power device design were measured experimentally. High voltage Schottky rectifiers were fabricated which verify the impressive electric breakdown field of GaN (2--5 MV/cm). Electron beam induced current (EBIC) experiments were also conducted to measure the minority carrier diffusion length for both electrons and holes in GaN. Part II of the thesis describes studies of the MBE growth of ZnS and investigations of ZnS/GaN fight emitting heterojunctions which show promise for application as blue and green light emitters. Zinc sulfide layers doped with Ag and Al were grown by MBE on sapphire, GaAs, and GaN substrates and characterized by x-ray diffraction and photoluminescence. Preliminary current-voltage and electroluminescence results are presented for a processed ZnS:Al,Ag/GaN:Mg prototype blue light emitting device.

Development of Thin-Film Battery Powered Transdermal Medical Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bates, J.B.; Sein, T.

1999-07-06

Research carried out at ORNL has led to the development of solid state thin-film rechargeable lithium and lithium-ion batteries. These unique devices can be fabricated in a variety of shapes and to any required size, large or small, on virtually any type of substrate. Because they have high energies per unit of volume and mass and because they are rechargeable, thin-film lithium batteries have potentially many applications as small power supplies in consumer and special electronic products. Initially, the objective of this project was to develop thin-film battery powered products. Initially, the objective of this project was to develop thin-filmmore » battery powered transdermal electrodes for recording electrocardiograms and electroencephalograms. These ''active'' electrode would eliminate the effect of interference and improve the reliability in diagnosing heart or brain malfunctions. Work in the second phase of this project was directed at the development of thin-film battery powered implantable defibrillators.« less

Npn double heterostructure bipolar transistor with ingaasn base region

DOEpatents

Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.

2004-07-20

An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

Efficient Color-Stable Inverted White Organic Light-Emitting Diodes with Outcoupling-Enhanced ZnO Layer.

PubMed

Zhao, Xin-Dong; Li, Yan-Qing; Xiang, Heng-Yang; Zhang, Yi-Bo; Chen, Jing-De; Xu, Lu-Hai; Tang, Jian-Xin

2017-01-25

Inverted organic light-emitting diode (OLED) has attracted extensive attention due to the demand in active-matrix OLED display panels as its geometry enables the direct connection with n-channel transistor backplane on the substrate. One key challenge of high-performance inverted OLED is an efficient electron-injection layer with superior electrical and optical properties to match the indium tin oxide cathode on substrate. We here propose a synergistic electron-injection architecture using surface modification of ZnO layer to simultaneously promote electron injection into organic emitter and enhance out-coupling of waveguided light. An efficient inverted white OLED is realized by introducing the nanoimprinted aperiodic nanostructure of ZnO for broadband and angle-independent light out-coupling and inserting an n-type doped interlayer for energy level tuning and injection barrier lowering. As a result, the optimized inverted white OLEDs have an external quantum efficiency of 42.4% and a power efficiency of 85.4 lm W 1- , which are accompanied by the superiority of angular color stability over the visible wavelength range. Our results may inspire a promising approach to fabricate high-efficiency inverted OLEDs for large-scale display panels.

Nucleation, growth, and strain relaxation of lattice-mismatched 3-5 semiconductor epitaxial layers

NASA Technical Reports Server (NTRS)

Welser, R. E.; Guido, L. J.

1994-01-01

We have investigated the early stages of evolution of highly strained 2-D InAs layers and 3-D InAs islands grown by metal-organic chemical vapor deposition (MOCVD) on (100) and (111)B GaAs substrates. The InAs epilayer/GaAs substrate combination has been chosen because the lattice-mismatch is severe (approximately 7.2 percent), yet these materials are otherwise very similar. By examining InAs-on-GaAs composites instead of the more common In(x)Ga(1-x)As alloy we remove an additional degree of freedom (x) and thereby simplify data interpretation. A matrix of experiments is described in which the MOCVD growth parameters - susceptor temperature, Thin flux, and AsH3 flux - have been varied over a wide range. Scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and electron microprobe analysis have been employed to observe the thin film surface morphology. In the case of 3-D growth, we have extracted activation energies and power-dependent exponents that characterize the nucleation process. As a consequence, optimized growth conditions have been identified for depositing approximately 250 A thick (100) and (111)B oriented InAs layers with relatively smooth surfaces. Together with preliminary data on the strain relaxation of these layers, the above results on the evolution of thin InAs films indicate that the (111)B orientation is particularly promising for yielding lattice-mismatched films that are fully relaxed with only misfit dislocations at the epilayer/substrate interface.

Integration of planar transformer and/or planar inductor with power switches in power converter

DOEpatents

Chen, Kanghua; Ahmed, Sayeed; Zhu, Lizhi

2007-10-30

A power converter integrates at least one planar transformer comprising a multi-layer transformer substrate and/or at least one planar inductor comprising a multi-layer inductor substrate with a number of power semiconductor switches physically and thermally coupled to a heat sink via one or more multi-layer switch substrates.

Two-dimensional materials based transparent flexible electronics

NASA Astrophysics Data System (ADS)

Yu, Lili; Ha, Sungjae; El-Damak, Dina; McVay, Elaine; Ling, Xi; Chandrakasan, Anantha; Kong, Jing; Palacios, Tomas

2015-03-01

Two-dimensional (2D) materials have generated great interest recently as a set of tools for electronics, as these materials can push electronics beyond traditional boundaries. These materials and their heterostructures offer excellent mechanical flexibility, optical transparency, and favorable transport properties for realizing electronic, sensing, and optical systems on arbitrary surfaces. These thin, lightweight, bendable, highly rugged and low-power devices may bring dramatic changes in information processing, communications and human-electronic interaction. In this report, for the first time, we demonstrate two complex transparent flexible systems based on molybdenum disulfide (MoS2) grown by chemical vapor method: a transparent active-matrix organic light-emitting diode (AMOLED) display and a MoS2 wireless link for sensor nodes. The 1/2 x 1/2 square inch, 4 x 5 pixels AMOLED structures are built on transparent substrates, containing MoS2 back plane circuit and OLEDs integrated on top of it. The back plane circuit turns on and off the individual pixel with two MoS2 transistors and a capacitor. The device is designed and fabricated based on SPICE simulation to achieve desired DC and transient performance. We have also demonstrated a MoS2 wireless self-powered sensor node. The system consists of as energy harvester, rectifier, sensor node and logic units. AC signals from the environment, such as near-field wireless power transfer, piezoelectric film and RF signal, are harvested, then rectified into DC signal by a MoS2 diode. CIQM, CICS, SRC.

Development of refractory armored silicon carbide by infrared transient liquid phase processing

NASA Astrophysics Data System (ADS)

Hinoki, Tatsuya; Snead, Lance L.; Blue, Craig A.

2005-12-01

Tungsten (W) and molybdenum (Mo) were coated on silicon carbide (SiC) for use as a refractory armor using a high power plasma arc lamp at powers up to 23.5 MW/m 2 in an argon flow environment. Both tungsten powder and molybdenum powder melted and formed coating layers on silicon carbide within a few seconds. The effect of substrate pre-treatment (vapor deposition of titanium (Ti) and tungsten, and annealing) and sample heating conditions on microstructure of the coating and coating/substrate interface were investigated. The microstructure was observed by scanning electron microscopy (SEM) and optical microscopy (OM). The mechanical properties of the coated materials were evaluated by four-point flexural tests. A strong tungsten coating was successfully applied to the silicon carbide substrate. Tungsten vapor deposition and pre-heating at 5.2 MW/m 2 made for a refractory layer containing no cracks propagating into the silicon carbide substrate. The tungsten coating was formed without the thick reaction layer. For this study, small tungsten carbide grains were observed adjacent to the interface in all conditions. In addition, relatively large, widely scattered tungsten carbide grains and a eutectic structure of tungsten and silicon were observed through the thickness in the coatings formed at lower powers and longer heating times. The strength of the silicon carbide substrate was somewhat decreased as a result of the processing. Vapor deposition of tungsten prior to powder coating helped prevent this degradation. In contrast, molybdenum coating was more challenging than tungsten coating due to the larger coefficient of thermal expansion (CTE) mismatch as compared to tungsten and silicon carbide. From this work it is concluded that refractory armoring of silicon carbide by Infrared Transient Liquid Phase Processing is possible. The tungsten armored silicon carbide samples proved uniform, strong, and capable of withstanding thermal fatigue testing.

Design of an ultra low power CMOS pixel sensor for a future neutron personal dosimeter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y.; Hu-Guo, C.; Husson, D.

2011-07-01

Despite a continuously increasing demand, neutron electronic personal dosimeters (EPDs) are still far from being completely established because their development is a very difficult task. A low-noise, ultra low power consumption CMOS pixel sensor for a future neutron personal dosimeter has been implemented in a 0.35 {mu}m CMOS technology. The prototype is composed of a pixel array for detection of charged particles, and the readout electronics is integrated on the same substrate for signal processing. The excess electrons generated by an impinging particle are collected by the pixel array. The charge collection time and the efficiency are the crucial pointsmore » of a CMOS detector. The 3-D device simulations using the commercially available Synopsys-SENTAURUS package address the detailed charge collection process. Within a time of 1.9 {mu}s, about 59% electrons created by the impact particle are collected in a cluster of 4 x 4 pixels with the pixel pitch of 80 {mu}m. A charge sensitive preamplifier (CSA) and a shaper are employed in the frond-end readout. The tests with electrical signals indicate that our prototype with a total active area of 2.56 x 2.56 mm{sup 2} performs an equivalent noise charge (ENC) of less than 400 e - and 314 {mu}W power consumption, leading to a promising prototype. (authors)« less

Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics.

PubMed

Kim, Janghyuk; Oh, Sooyeoun; Mastro, Michael A; Kim, Jihyun

2016-06-21

This study demonstrated the exfoliation of a two-dimensional (2D) β-Ga2O3 nano-belt and subsequent processing into a thin film transistor structure. This mechanical exfoliation and transfer method produces β-Ga2O3 nano-belts with a pristine surface as well as a continuous defect-free interface with the SiO2/Si substrate. This β-Ga2O3 nano-belt based transistor displayed an on/off ratio that increased from approximately 10(4) to 10(7) over the operating temperature range of 20 °C to 250 °C. No electrical breakdown was observed in our measurements up to VDS = +40 V and VGS = -60 V between 25 °C and 250 °C. Additionally, the electrical characteristics were not degraded after a month-long storage in ambient air. The demonstration of high-temperature/high-voltage operation of quasi-2D β-Ga2O3 nano-belts contrasts with traditional 2D materials such as transition metal dichalcogenides that intrinsically have limited temperature and power operational envelopes owing to their narrow bandgap. This work motivates the application of 2D β-Ga2O3 to high power nano-electronic devices for harsh environments such as high temperature chemical sensors and photodetectors as well as the miniaturization of power circuits and cooling systems in nano-electronics.

Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin films

PubMed Central

2013-01-01

In this study, radio frequency magnetron sputtering was used to deposit nickel oxide thin films (NiO, deposition power of 100 W) and titanium-doped zinc oxide thin films (TZO, varying deposition powers) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. The structural, optical, and electrical properties of the TZO and NiO thin films and NiO/TZO heterojunction devices were investigated with scanning electron microscopy, X-ray diffraction (XRD) patterns, UV-visible spectroscopy, Hall effect analysis, and current-voltage (I-V) analysis. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of TZO were observable in the NiO/TZO heterojunction devices, indicating that the TZO thin films showed a good c-axis orientation perpendicular to the glass substrates. When the sputtering deposition power for the TZO thin films was 100, 125, and 150 W, the I-V characteristics confirmed that a p-n junction characteristic was successfully formed in the NiO/TZO heterojunction devices. We show that the NiO/TZO heterojunction diode was dominated by the space-charge limited current theory. PMID:23634999

Arbitrary-Shaped Graphene-Based Planar Sandwich Supercapacitors on One Substrate with Enhanced Flexibility and Integration.

PubMed

Zheng, Shuanghao; Tang, Xingyan; Wu, Zhong-Shuai; Tan, Yuan-Zhi; Wang, Sen; Sun, Chenglin; Cheng, Hui-Ming; Bao, Xinhe

2017-02-28

The emerging smart power source-unitized electronics represent an utmost innovative paradigm requiring dramatic alteration from materials to device assembly and integration. However, traditional power sources with huge bottlenecks on the design and performance cannot keep pace with the revolutionized progress of shape-confirmable integrated circuits. Here, we demonstrate a versatile printable technology to fabricate arbitrary-shaped, printable graphene-based planar sandwich supercapacitors based on the layer-structured film of electrochemically exfoliated graphene as two electrodes and nanosized graphene oxide (lateral size of 100 nm) as a separator on one substrate. These monolithic planar supercapacitors not only possess arbitrary shapes, e.g., rectangle, hollow-square, "A" letter, "1" and "2" numbers, circle, and junction-wire shape, but also exhibit outstanding performance (∼280 F cm -3 ), excellent flexibility (no capacitance degradation under different bending states), and applicable scalability, which are far beyond those achieved by conventional technologies. More notably, such planar supercapacitors with superior integration can be readily interconnected in parallel and series, without use of metal interconnects and contacts, to modulate the output current and voltage of modular power sources for designable integrated circuits in various shapes and sizes.

Foldable graphene electronic circuits based on paper substrates.

PubMed

Hyun, Woo Jin; Park, O Ok; Chin, Byung Doo

2013-09-14

Graphene electronic circuits are prepared on paper substrates by using graphene nanoplates and applied to foldable paper-based electronics. The graphene circuits show a small change in conductance under various folding angles and maintain an electronic path on paper substrates after repetition of folding and unfolding. Foldable paper-based applications with graphene circuits exhibit excellent folding stability. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photoelectrochemical molecular comb

DOEpatents

Thundat, Thomas G.; Ferrell, Thomas L.; Brown, Gilbert M.

2006-08-15

A method and apparatus for separating molecules. The apparatus includes a substrate having a surface. A film in contact with the surface defines a substrate/film interface. An electrode electrically connected to the film applies a voltage potential between the electrode and the substrate to form a depletion region in the substrate at the substrate/film interface. A photon energy source having an energy level greater than the potential is directed at the depletion region to form electron-hole pairs in the depletion region. At least one of the electron-hole pairs is separated by the potential into an independent electron and an independent hole having opposite charges and move in opposing directions. One of the electron and hole reach the substrate/film interface to create a photopotential in the film causing charged molecules in the film to move in response to the localized photovoltage.

Investigation of the hard x-ray background in backlit pinhole imagers.

PubMed

Fein, J R; Peebles, J L; Keiter, P A; Holloway, J P; Klein, S R; Kuranz, C C; Manuel, M J-E; Drake, R P

2014-11-01

Hard x-rays from laser-produced hot electrons (>10 keV) in backlit pinhole imagers can give rise to a background signal that decreases signal dynamic range in radiographs. Consequently, significant uncertainties are introduced to the measured optical depth of imaged plasmas. Past experiments have demonstrated that hard x-rays are produced when hot electrons interact with the high-Z pinhole substrate used to collimate the softer He-α x-ray source. Results are presented from recent experiments performed on the OMEGA-60 laser to further study the production of hard x-rays in the pinhole substrate and how these x-rays contribute to the background signal in radiographs. Radiographic image plates measured hard x-rays from pinhole imagers with Mo, Sn, and Ta pinhole substrates. The variation in background signal between pinhole substrates provides evidence that much of this background comes from x-rays produced in the pinhole substrate itself. A Monte Carlo electron transport code was used to model x-ray production from hot electrons interacting in the pinhole substrate, as well as to model measurements of x-rays from the irradiated side of the targets, recorded by a bremsstrahlung x-ray spectrometer. Inconsistencies in inferred hot electron distributions between the different pinhole substrate materials demonstrate that additional sources of hot electrons beyond those modeled may produce hard x-rays in the pinhole substrate.

Investigation of the hard x-ray background in backlit pinhole imagers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fein, J. R., E-mail: jrfein@umich.edu; Holloway, J. P.; Peebles, J. L.

Hard x-rays from laser-produced hot electrons (>10 keV) in backlit pinhole imagers can give rise to a background signal that decreases signal dynamic range in radiographs. Consequently, significant uncertainties are introduced to the measured optical depth of imaged plasmas. Past experiments have demonstrated that hard x-rays are produced when hot electrons interact with the high-Z pinhole substrate used to collimate the softer He-α x-ray source. Results are presented from recent experiments performed on the OMEGA-60 laser to further study the production of hard x-rays in the pinhole substrate and how these x-rays contribute to the background signal in radiographs. Radiographicmore » image plates measured hard x-rays from pinhole imagers with Mo, Sn, and Ta pinhole substrates. The variation in background signal between pinhole substrates provides evidence that much of this background comes from x-rays produced in the pinhole substrate itself. A Monte Carlo electron transport code was used to model x-ray production from hot electrons interacting in the pinhole substrate, as well as to model measurements of x-rays from the irradiated side of the targets, recorded by a bremsstrahlung x-ray spectrometer. Inconsistencies in inferred hot electron distributions between the different pinhole substrate materials demonstrate that additional sources of hot electrons beyond those modeled may produce hard x-rays in the pinhole substrate.« less

Substrate dependence of electron-stimulated O - yields from dissociative electron attachment to physisorbed O2

NASA Astrophysics Data System (ADS)

Huels, M. A.; Parenteau, L.; Sanche, L.

1994-03-01

We present measurements of O- electron stimulated desorption yields obtained under identical experimental conditions from 0.15 monolayers (ML) of O2 deposited onto disordered substrates consisting of 4 ML of either Kr, Xe, C2H6, C2H4, N2O, CH3Cl, or H2O, all condensed on Pt (polycrystalline). The resulting O- yield functions, for incident electron energies below 20 eV, are compared to that obtained from the O2/Kr solid; this allows us to assess the order of magnitude effects of the local substrate environment on dissociative electron attachment (DEA) via the 2Πu and gas phase forbidden 2Σ+g,u resonances of O-2. We note that, in addition to electron energy losses in the substrate prior to DEA to O2 and post-dissociation interactions of the O- with the substrate molecules, charge or energy transfer from the O-2 transient anion to a substrate molecule, and capture of the incident electron into a dissociative anion resonance of the substrate molecule may contribute to a reduced O- yield from the physisorbed O2. In the case of O2 deposited on amorphous ice, we find that the O- signal from DEA to O2 is completely absent for electron energies below 14 eV; we attribute this to a complete quenching of the dissociative O-2(2Πu, 2Σ+) resonances by the adjacent water molecules.

Carbon Nanotube Patterning on a Metal Substrate

NASA Technical Reports Server (NTRS)

Nguyen, Cattien V. (Inventor)

2016-01-01

A CNT electron source, a method of manufacturing a CNT electron source, and a solar cell utilizing a CNT patterned sculptured substrate are disclosed. Embodiments utilize a metal substrate which enables CNTs to be grown directly from the substrate. An inhibitor may be applied to the metal substrate to inhibit growth of CNTs from the metal substrate. The inhibitor may be precisely applied to the metal substrate in any pattern, thereby enabling the positioning of the CNT groupings to be more precisely controlled. The surface roughness of the metal substrate may be varied to control the density of the CNTs within each CNT grouping. Further, an absorber layer and an acceptor layer may be applied to the CNT electron source to form a solar cell, where a voltage potential may be generated between the acceptor layer and the metal substrate in response to sunlight exposure.

Electronic transport in heterostructures of chemical vapor deposited graphene and hexagonal boron nitride.

PubMed

Qi, Zhengqing John; Hong, Sung Ju; Rodríguez-Manzo, Julio A; Kybert, Nicholas J; Gudibande, Rajatesh; Drndić, Marija; Park, Yung Woo; Johnson, A T Charlie

2015-03-25

CVD graphene devices on stacked CVD hexagonal boron nitride (hBN) are demonstrated using a novel low-contamination transfer method, and their electrical performance is systematically compared to devices on SiO(2). An order of magnitude improvement in mobility, sheet resistivity, current density, and sustained power is reported when the oxide substrate is covered with five-layer CVD hBN. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microstructure and Sn crystal orientation evolution in Sn-3.5Ag lead-free solders in high temperature packaging applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Bite; Muralidharan, Govindarajan; Kurumaddali, Nalini Kanth

2014-01-01

Understanding the reliability of eutectic Sn-3.5Ag lead-free solders in high temperature packaging applications is of significant interest in power electronics for the next generation electric grid. Large area (2.5mm 2.5mm) Sn-3.5Ag solder joints between silicon dies and direct bonded copper substrates were thermally cycled between 5 C and 200 C. Sn crystal orientation and microstructure evolution during thermal cycling were characterized by electron backscatter diffraction (EBSD) in scanning electron microscope (SEM). Comparisons are made between observed initial texture and microstructure and its evolution during thermal cycling. Gradual lattice rotation and grain boundary misorientation evolution suggested the continuous recrystallization mechanism. Recrystallizationmore » behavior was correlated with dislocation slip activities.« less

Nanocomposites in Multifuntional Structures for Spacecraft Platforms

NASA Astrophysics Data System (ADS)

Marcos, J.; Mendizabal, M.; Elizetxea, C.; Florez, S.; Atxaga, G.; Del Olmo, E.

2012-07-01

The integration of functionalities as electrical, thermal, power or radiation shielding inside carrier electronic boxes, solar panels or platform structures allows reducing weight, volume, and harness for spacecraft. The multifunctional structures represent an advanced design approach for space components and subsystems. The development of such multifunctional structures aims the re-engineering traditional metallic structures by composites in space, which request to provide specific solutions for thermal conductivity, EMI-EMC, radiation shielding and integration. The use of nanomaterials as CNF and nano-adds to reinforce composite structures allows obtaining local solutions for improving electrical conductivity, thermal conductivity and radiation shielding. The paper summarises the results obtained in of three investigations conducted by Tecnalia based on carbon nanofillers for improving electro-thermal characteristics of spacecraft platform, electronic substrates and electronics boxes respectively.

Optical and electronic properties of self-assembled nanoparticle-ligand metasurfaces

NASA Astrophysics Data System (ADS)

Fontana, Jake; Livenere, John; Caldwell, Joshua; Spillmann, Christopher; Naciri, Jawad; Rendell, Ronald; Ratna, Banahalli

2013-03-01

The optical and electronic properties of inorganic nanoparticles organized into two-dimensional lattices sensitively depend on the properties of the organic ligand shell coating the nanoparticles. We study the optical and electronic properties of these two-dimensional metasurfaces consisting of gold nanoparticles functionalized with ligands and self-assembled into macroscopic monolayers on non-templated substrates. Using these metasurfaces we demonstrate an average surface-enhanced Raman scattering (SERS) enhancement factor on the order of 108 for benzenethiol ligands and study the mechanisms that influence the enhancement. These metasurfaces may provide a platform for the development of low-power, low-cost next-generation chem/bio-sensors and new insights into the organic-inorganic interface at the nanoscale. This work was supported with funding provided from the Office of Naval Research

Advanced in-situ control for III-nitride RF power device epitaxy

NASA Astrophysics Data System (ADS)

Brunner, F.; Zettler, J.-T.; Weyers, M.

2018-04-01

In this contribution, the latest improvements regarding wafer temperature measurement on 4H-SiC substrates and, based on this, of film thickness and composition control of GaN and AlGaN layers in power electronic device structures are presented. Simultaneous pyrometry at different wavelengths (950 nm and 405 nm) reveal the advantages and limits of the different temperature measurement approaches. Near-UV pyrometry gives a very stable wafer temperature signal without oscillations during GaN growth since the semi-insulating 4H-SiC substrate material becomes opaque at temperatures above 550 °C at the wavelength of 405 nm. A flat wafer temperature profile across the 100 mm substrate diameter is demonstrated despite a convex wafer shape at AlGaN growth conditions. Based on the precise assignment of wafer temperature during MOVPE we were able to improve the accuracy of the high-temperature n-k database for the materials involved. Consequently, the measurement accuracy of all film thicknesses grown under fixed temperature conditions improved. Comparison of in situ and ex situ determined layer thicknessess indicate an unintended etching of the topmost layer during cool-down. The details and limitations of real-time composition analysis for lower Al-content AlGaN barrier layers during transistor device epitaxy are shown.

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

Electricity-driven metabolic shift through direct electron uptake by electroactive heterotroph Clostridium pasteurianum

PubMed Central

Choi, Okkyoung; Kim, Taeyeon; Woo, Han Min; Um, Youngsoon

2014-01-01

Although microbes directly accepting electrons from a cathode have been applied for CO2 reduction to produce multicarbon-compounds, a high electron demand and low product concentration are critical limitations. Alternatively, the utilization of electrons as a co-reducing power during fermentation has been attempted, but there must be exogenous mediators due to the lack of an electroactive heterotroph. Here, we show that Clostridium pasteurianum DSM 525 simultaneously utilizes both cathode and substrate as electron donors through direct electron transfer. In a cathode compartment poised at +0.045 V vs. SHE, a metabolic shift in C. pasteurianum occurs toward NADH-consuming metabolite production such as butanol from glucose (20% shift in terms of NADH consumption) and 1,3-propandiol from glycerol (21% shift in terms of NADH consumption). Notably, a small amount of electron uptake significantly induces NADH-consuming pathways over the stoichiometric contribution of the electrons as reducing equivalents. Our results demonstrate a previously unknown electroactivity and metabolic shift in the biochemical-producing heterotroph, opening up the possibility of efficient and enhanced production of electron-dense metabolites using electricity. PMID:25376371

A study of the effects of aligned vertically growth time on ZnO nanorods deposited for the first time on Teflon substrate

NASA Astrophysics Data System (ADS)

Farhat, O. F.; Halim, M. M.; Ahmed, Naser M.; Oglat, Ammar A.; Abuelsamen, A. A.; Bououdina, M.; Qaeed, M. A.

2017-12-01

In this study, ZnO nanorods (NRs) were well deposited on Teflon substrates (PTFE) via a chemical bath deposition (CBD) method at low temperature. The consequences of growth time (1 h-4 h) on the structural and optical properties of the aligned ZnO (NRs) were investigated through X-ray diffraction, field-emission scanning electron microscopy (FESEM), and photoluminescence (PL) analyses. The results show that the ZnO (NRs) were preferred to grew aligned along the c-axis as hexagonal wurtzite structure as proved by the sharp and strong ZnO (002) peaks of the ZnO (NRs). Irrespective of the growth continuation, FESEM photos confirmed that the ZnO nanorods arrays were fit to be aligned along the c-axis and perpendicular to (PTFE) substrates. The ZnO nanorods that exhibited the sharper stand most intense PL peaks among the sample were grown for 3hs as demonstrated by PL spectra. The device further showed a sensitivity of 4068 to low-power (1.25 mW/cm2) 375 nm light pulses without an external bias. The measurements of photoresponse demonstrated the highly reproducible characteristics of the fabricated UV detector with rapid response and baseline recovery times of 48.05 ms. Thus, this work introduced a simple, low-cost method of fabricating rapid-response, and highly photosensitive UV detectors with zero power consumption on Teflon substrates.

Growth (AlCrNbSiTiV)N thin films on the interrupted turning and properties using DCMS and HIPIMS system

NASA Astrophysics Data System (ADS)

Chang, Kai-Sheng; Chen, Kuan-Ta; Hsu, Chun-Yao; Hong, Po-Da

2018-05-01

This paper determines the optimal settings in the deposition parameters for (AlCrNbSiTiV)N high-entropy alloy (HEAs) nitride films that are deposited on CBN cutting tools and glass substrates. We use direct current magnetron sputtering (DCMS) and high power impulse magnetron sputtering (HIPIMS), with Ar plasma and N2 reactive gases. Experiments with the grey-Taguchi method are conducted to determine the effect of deposition parameters (deposition time, substrate DC bias, DC power and substrate temperature) on interrupted turning 50CrMo4 steel machining and the films' structural properties. Experimental result shows that the multiple performance characteristics for these (AlCrNbSiTiV)N HEAs film coatings can be improved using the grey-Taguchi method. As can be seen, the coated film is homogeneous, very compact and exhibits perfect adherence to the substrate. The distribution of elements is homogeneous through the depth of the (AlCrNbSiTiV)N film, as measured by an auger electron nanoscope. After interrupted turning with an (AlCrNbSiTiV)N film coated tool, we obtain much longer tool life than when using uncoated tools. The correlation of these results with microstructure analysis and tool life indicates that HIPIMS discharge induced a higher (AlCrNbSiTiV)N film density, a smoother surface structure and a higher hardness surface.

Zero-static power radio-frequency switches based on MoS2 atomristors.

PubMed

Kim, Myungsoo; Ge, Ruijing; Wu, Xiaohan; Lan, Xing; Tice, Jesse; Lee, Jack C; Akinwande, Deji

2018-06-28

Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS 2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS 2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS 2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (f c ), is about 10 THz for sub-μm 2 switches with favorable scaling that can afford f c above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.

High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance

NASA Astrophysics Data System (ADS)

Oh, Seung Kyu; Cho, Moon Uk; Dallas, James; Jang, Taehoon; Lee, Dong Gyu; Pouladi, Sara; Chen, Jie; Wang, Weijie; Shervin, Shahab; Kim, Hyunsoo; Shin, Seungha; Choi, Sukwon; Kwak, Joon Seop; Ryou, Jae-Hyun

2017-09-01

We investigate thermo-electronic behaviors of flexible AlGaN/GaN heterostructure field-effect transistors (HFETs) for high-power operation of the devices using Raman thermometry, infrared imaging, and current-voltage characteristics. A large negative differential conductance observed in HFETs on polymeric flexible substrates is confirmed to originate from the decreasing mobility of the two-dimensional electron gas channel caused by the self-heating effect. We develop high-power transistors by suppressing the negative differential conductance in the flexible HFETs using chemical lift-off and modified Ti/Au/In metal bonding processes with copper (Cu) tapes for high thermal conductivity and low thermal interfacial resistance in the flexible hybrid structures. Among different flexible HFETs, the ID of the HFETs on Cu with Ni/Au/In structures decreases only by 11.3% with increasing drain bias from the peak current to the current at VDS = 20 V, which is close to that of the HFETs on Si (9.6%), solving the problem of previous flexible AlGaN/GaN transistors.

Understanding and controlling the substrate effect on graphene electron-transfer chemistry via reactivity imprint lithography

NASA Astrophysics Data System (ADS)

Wang, Qing Hua; Jin, Zhong; Kim, Ki Kang; Hilmer, Andrew J.; Paulus, Geraldine L. C.; Shih, Chih-Jen; Ham, Moon-Ho; Sanchez-Yamagishi, Javier D.; Watanabe, Kenji; Taniguchi, Takashi; Kong, Jing; Jarillo-Herrero, Pablo; Strano, Michael S.

2012-09-01

Graphene has exceptional electronic, optical, mechanical and thermal properties, which provide it with great potential for use in electronic, optoelectronic and sensing applications. The chemical functionalization of graphene has been investigated with a view to controlling its electronic properties and interactions with other materials. Covalent modification of graphene by organic diazonium salts has been used to achieve these goals, but because graphene comprises only a single atomic layer, it is strongly influenced by the underlying substrate. Here, we show a stark difference in the rate of electron-transfer reactions with organic diazonium salts for monolayer graphene supported on a variety of substrates. Reactions proceed rapidly for graphene supported on SiO2 and Al2O3 (sapphire), but negligibly on alkyl-terminated and hexagonal boron nitride (hBN) surfaces, as shown by Raman spectroscopy. We also develop a model of reactivity based on substrate-induced electron-hole puddles in graphene, and achieve spatial patterning of chemical reactions in graphene by patterning the substrate.

Functional energy nanocomposites surfaces based on mesoscopic microspheres, polymers and graphene flakes

NASA Astrophysics Data System (ADS)

Alekseev, S. A.; Dmitriev, A. S.; Dmitriev, A. A.; Makarov, P. G.; Mikhailova, I. A.

2017-11-01

In recent years, there has been a great interest in the development and creation of new functional energy materials, including for improving the energy efficiency of power equipment and for effectively removing heat from energy devices, microelectronics and optoelectronics (power micro electronics, supercapacitors, cooling of processors, servers and Data centers). In this paper, the technology of obtaining a new nanocomposite based on mesoscopic microspheres, polymers and graphene flakes is considered. The methods of sequential production of functional materials from graphite flakes of different volumetric concentration using polymers based on epoxy resins and polyimide, as well as the addition of a mesoscopic medium in the form of monodisperse microspheres are described. The data of optical and electron microscopy of such nanocomposites are presented, the main problems in the appearance of defects in such materials are described, the possibilities of their elimination by the selection of different concentrations and sizes of the components. Data are given on the measurement of the hysteresis of the contact angle and the evaporation of droplets on similar substrates. The results of studying the mechanical, electrophysical and thermal properties of such nanocomposites are presented. Particular attention is paid to the investigation of the thermal conductivity of these nanocomposites with respect to the creation of thermal interface materials for cooling devices of electronics, optoelectronics and power engineering.

Graphene-on-semiconductor substrates for analog electronics

DOEpatents

Lagally, Max G.; Cavallo, Francesca; Rojas-Delgado, Richard

2016-04-26

Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a semiconductor substrate. The graphene layer and the substrate are separated by an interfacial region that promotes transfer of charge carriers from the surface of the substrate to the graphene.

The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC

NASA Astrophysics Data System (ADS)

Alfieri, G.; Knoll, L.; Kranz, L.; Sundaramoorthy, V.

2018-05-01

High-purity semi-insulating 4H-SiC can find a variety of applications, ranging from power electronics to quantum computing applications. However, data on the electronic properties of deep levels in this material are scarce. For this reason, we present a deep level transient spectroscopy study on HPSI 4H-SiC substrates, both as-grown and irradiated with low-energy electrons (to displace only C-atoms). Our investigation reveals the presence of four deep levels with activation energies in the 0.4-0.9 eV range. The concentrations of three of these levels increase by at least one order of magnitude after irradiation. Furthermore, we analyzed the behavior of these traps under sub- and above-band gap illumination. The nature of the traps is discussed in the light of the present data and results reported in the literature.

Electricity generation by Rhodopseudomonas palustris DX-1.

PubMed

Xing, Defeng; Zuo, Yi; Cheng, Shaoan; Regan, John M; Logan, Bruce E

2008-06-01

Bacteria able to generate electricity in microbial fuel cells (MFCs) are of great interest, but there are few strains capable of high power production in these systems. Here we report that the phototrophic purple nonsulfur bacterium Rhodopseudomonas palustris DX-1, isolated from an MFC, produced electricity at higher power densities (2720 +/- 60 mW/m2) than mixed cultures in the same device. While Rhodopseudomonas species are known for their ability to generate hydrogen, they have not previously been shown to generate power in an MFC, and current was generated without the need for light or hydrogen production. Strain DX-1 utilizes a wide variety of substrates (volatile acids, yeast extract, and thiosulfate) for power production in different metabolic modes, making it highly useful for studying power generation in MFCs and generating power from a range of simple and complex sources of organic matter. These results demonstrate that a phototrophic purple nonsulfur bacterium can efficiently generate electricity by direct electron transfer in MFCs, providing another model microorganism for MFC investigations.

Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alfaraj, Nasir; Hussain, Aftab M.; Torres Sevilla, Galo A.

Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrappedmore » around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal–oxide–semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.« less

Carbon-Based Oxamate Cobalt(III) Complexes as Bioenzyme Mimics for Contaminant Elimination in High Backgrounds of Complicated Constituents.

PubMed

Li, Nan; Zheng, Yun; Jiang, Xuemei; Zhang, Ran; Pei, Kemei; Chen, Wenxing

2017-10-12

Complex wastewater with massive components is now a serious environmental issue facing humanity. Selective removal of low-concentration contaminants in mixed constituents holds great promise for increasing water supplies. Bioenzymes like horseradish peroxidase exhibit oxidizing power and selectivity. Here, we manufactured its mimic through immobilizing non-heme oxamate anionic cobalt(III) complex ([Co III (opba)] - , opba = o-phenylenebis(oxamate)) onto pyridine (Py) modified multiwalled carbon nanotubes ([Co III (opba)] - -Py-MWCNTs, MWCNTs = multiwalled carbon nanotubes), where MWCNTs captured substrates and Py functioned as the fifth ligand. We chose typical azo dye (C.I. Acid Red 1) and antibiotic (ciprofloxacin) as model substrates. Without •OH, this catalyst could detoxify target micropollutants efficiently at pH from 8 to 11. It also remained efficient in repetitive tests, and the final products were non-poisonous OH-containing acids. Combined with radical scavenger tests and electron paramagnetic resonance result, we speculated that high-valent cobalt-oxo active species and oxygen atom transfer reaction dominated in the reaction pathway. According to density functional theory calculations, the electron spin density distribution order showed that electron-withdrawing ligand was beneficial for inward pulling the excess electron and lowering the corresponding energy levels, achieving an electrophilic-attack enhancement of the catalyst. With target removal property and recyclability, this catalyst is prospective in water detoxication.

Silicon/III-V laser with super-compact diffraction grating for WDM applications in electronic-photonic integrated circuits.

PubMed

Wang, Yadong; Wei, Yongqiang; Huang, Yingyan; Tu, Yongming; Ng, Doris; Lee, Cheewei; Zheng, Yunan; Liu, Boyang; Ho, Seng-Tiong

2011-01-31

We have demonstrated a heterogeneously integrated III-V-on-Silicon laser based on an ultra-large-angle super-compact grating (SCG). The SCG enables single-wavelength operation due to its high-spectral-resolution aberration-free design, enabling wavelength division multiplexing (WDM) applications in Electronic-Photonic Integrated Circuits (EPICs). The SCG based Si/III-V laser is realized by fabricating the SCG on silicon-on-insulator (SOI) substrate. Optical gain is provided by electrically pumped heterogeneous integrated III-V material on silicon. Single-wavelength lasing at 1550 nm with an output power of over 2 mW and a lasing threshold of around 150 mA were achieved.

A hydrogel capsule as gate dielectric in flexible organic field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dumitru, L. M.; Manoli, K.; Magliulo, M.

2015-01-01

A jellified alginate based capsule serves as biocompatible and biodegradable electrolyte system to gate an organic field-effect transistor fabricated on a flexible substrate. Such a system allows operating thiophene based polymer transistors below 0.5 V through an electrical double layer formed across an ion-permeable polymeric electrolyte. Moreover, biological macro-molecules such as glucose-oxidase and streptavidin can enter into the gating capsules that serve also as delivery system. An enzymatic bio-reaction is shown to take place in the capsule and preliminary results on the measurement of the electronic responses promise for low-cost, low-power, flexible electronic bio-sensing applications using capsule-gated organic field-effect transistors.

Method of forming crystalline silicon devices on glass

DOEpatents

McCarthy, A.M.

1995-03-21

A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

Method for electrostatic deposition of graphene on a substrate

NASA Technical Reports Server (NTRS)

Sumanasekera, Gamini (Inventor); Sidorov, Anton N. (Inventor); Ouseph, P. John (Inventor); Yazdanpanah, Mehdi M. (Inventor); Cohn, Robert W. (Inventor); Jalilian, Romaneh (Inventor)

2010-01-01

A method for electrostatic deposition of graphene on a substrate comprises the steps of securing a graphite sample to a first electrode; electrically connecting the first electrode to a positive terminal of a power source; electrically connecting a second electrode to a ground terminal of the power source; placing the substrate over the second electrode; and using the power source to apply a voltage, such that graphene is removed from the graphite sample and deposited on the substrate.

Electricity generation from bio-treatment of sewage sludge with microbial fuel cell.

PubMed

Jiang, Junqiu; Zhao, Qingliang; Zhang, Jinna; Zhang, Guodong; Lee, Duu-Jong

2009-12-01

A two-chambered microbial fuel cell (MFC) with potassium ferricyanide as its electron acceptor was utilized to degrade excess sewage sludge and to generate electricity. Stable electrical power was produced continuously during operation for 250 h. Total chemical oxygen demand (TCOD) of sludge was reduced by 46.4% when an initial TCOD was 10,850 mg/l. The MFC power output did not significantly depend on process parameters such as substrate concentration, cathode catholyte concentration, and anodic pH. However, the MFC produced power was in close correlation with the soluble chemical oxygen demand (SCOD) of sludge. Furthermore, ultrasonic pretreatment of sludge accelerated organic matter dissolution and, hence, TCOD removal rate in the MFC was increased, but power output was insignificantly enhanced. This study demonstrates that this MFC can generate electricity from sewage sludge over a wide range of process parameters.

High-Sensitivity and Low-Power Flexible Schottky Hydrogen Sensor Based on Silicon Nanomembrane.

PubMed

Cho, Minkyu; Yun, Jeonghoon; Kwon, Donguk; Kim, Kyuyoung; Park, Inkyu

2018-04-18

High-performance and low-power flexible Schottky diode-based hydrogen sensor was developed. The sensor was fabricated by releasing Si nanomembrane (SiNM) and transferring onto a plastic substrate. After the transfer, palladium (Pd) and aluminum (Al) were selectively deposited as a sensing material and an electrode, respectively. The top-down fabrication process of flexible Pd/SiNM diode H 2 sensor is facile compared to other existing bottom-up fabricated flexible gas sensors while showing excellent H 2 sensitivity (Δ I/ I 0 > 700-0.5% H 2 concentrations) and fast response time (τ 10-90 = 22 s) at room temperature. In addition, selectivity, humidity, and mechanical tests verify that the sensor has excellent reliability and robustness under various environments. The operating power consumption of the sensor is only in the nanowatt range, which indicates its potential applications in low-power portable and wearable electronics.

Temperature Gradient Effect on Gas Discrimination Power of a Metal-Oxide Thin-Film Sensor Microarray

PubMed Central

Sysoev, Victor V.; Kiselev, Ilya; Frietsch, Markus; Goschnick, Joachim

2004-01-01

The paper presents results concerning the effect of spatial inhomogeneous operating temperature on the gas discrimination power of a gas-sensor microarray, with the latter based on a thin SnO2 film employed in the KAMINA electronic nose. Three different temperature distributions over the substrate are discussed: a nearly homogeneous one and two temperature gradients, equal to approx. 3.3 °C/mm and 6.7 °C/mm, applied across the sensor elements (segments) of the array. The gas discrimination power of the microarray is judged by using the Mahalanobis distance in the LDA (Linear Discrimination Analysis) coordinate system between the data clusters obtained by the response of the microarray to four target vapors: ethanol, acetone, propanol and ammonia. It is shown that the application of a temperature gradient increases the gas discrimination power of the microarray by up to 35 %.

Low-power chip-level optical interconnects based on bulk-silicon single-chip photonic transceivers

NASA Astrophysics Data System (ADS)

Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Kim, In Gyoo; Kim, Sun Ae; Oh, Jin Hyuk; Park, Jaegyu; Kim, Sanggi

2016-03-01

We present new scheme for chip-level photonic I/Os, based on monolithically integrated vertical photonic devices on bulk silicon, which increases the integration level of PICs to a complete photonic transceiver (TRx) including chip-level light source. A prototype of the single-chip photonic TRx based on a bulk silicon substrate demonstrated 20 Gb/s low power chip-level optical interconnects between fabricated chips, proving that this scheme can offer compact low-cost chip-level I/O solutions and have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, 3D-IC, and LAN/SAN/data-center and network applications.

Additive Manufacturing of Aerospace Alloys for Aircraft Structures

DTIC Science & Technology

2006-05-01

power and traverse speed on microstructure, porosity , and build height in laser-deposited Ti- 6Al - 4V ”, Scripta Mater., Vol. 43, pp. 299-305, 2000. [10...laser additive manufacturing) process to produce Ti- 6Al - 4V structures. Many similar processes are under development elsewhere, including electron-beam...wattage CO2 laser and a powder feed system to deposit wide, thick beads (~ 0.5” x 0.15”) of Ti- 6Al - 4V onto a substrate. The primary LAMSM deposition

Performance and Reliability of Bonded Interfaces for High-Temperature Packaging (Presentation)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Devoto, D.

2014-11-01

The thermal performance and reliability of sintered-silver is being evaluated for power electronics packaging applications. This will be experimentally accomplished by the synthesis of large-area bonded interfaces between metalized substrates that will be subsequently subjected to thermal cycles. A finite element model of crack initiation and propagation in these bonded interfaces will allow for the interpretation of degradation rates by a crack-velocity (V)-stress intensity factor (K) analysis. The experiment is outlined, and the modeling approach is discussed.

Ternary Precursors for Depositing I-III-VI2 Thin Films for Solar Cells via Spray CVD

NASA Technical Reports Server (NTRS)

Banger, K. K.; Hollingsworth, J. A.; Jin, M. H.-C.; Harris, J. D.; Duraj, S. A.; Smith, M.; Scheiman, D.; Bohannan, E. W.; Switzer, J. A.; Buhro, W. E.

2002-01-01

The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power (W/kg). Thin-film fabrication studies demonstrate that ternary single source precursors (SSP's) can be used in either a hot or cold-wall spray chemical vapour deposition (CVD) reactor, for depositing CuInS2, CuGaS2, and CuGaInS2 at reduced temperatures (400 to 450 C), which display good electrical and optical properties suitable for photovoltaic (PV) devices. X-ray diffraction studies, energy dispersive spectroscopy (EDS), and scanning electron microscopy (SEM) confirmed the formation of the single phase CIS, CGS, CIGS thin-films on various substrates at reduced temperatures.

Amorphous metallizations for high-temperature semiconductor device applications

NASA Technical Reports Server (NTRS)

Wiley, J. D.; Perepezko, J. H.; Nordman, J. E.; Kang-Jin, G.

1981-01-01

The initial results of work on a class of semiconductor metallizations which appear to hold promise as primary metallizations and diffusion barriers for high temperature device applications are presented. These metallizations consist of sputter-deposited films of high T sub g amorphous-metal alloys which (primarily because of the absence of grain boundaries) exhibit exceptionally good corrosion-resistance and low diffusion coefficients. Amorphous films of the alloys Ni-Nb, Ni-Mo, W-Si, and Mo-Si were deposited on Si, GaAs, GaP, and various insulating substrates. The films adhere extremely well to the substrates and remain amorphous during thermal cycling to at least 500 C. Rutherford backscattering and Auger electron spectroscopy measurements indicate atomic diffussivities in the 10 to the -19th power sq cm/S range at 450 C.

Packaging Technologies for 500 C SiC Electronics and Sensors: Challenges in Material Science and Technology

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Behelm, Glenn M.; Spry, David J.; Meredith, Roger D.; Hunter, Gary W.

2015-01-01

This paper presents ceramic substrates and thick-film metallization based packaging technologies in development for 500C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550C. The 96 alumina packaging system composed of chip-level packages and PCBs has been successfully tested with high temperature SiC discrete transistor devices at 500C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC junction field-effect-transistor (JFET) with a packaging system composed of a 96 alumina chip-level package and an alumina printed circuit board was tested on low earth orbit for eighteen months via a NASA International Space Station experiment. In addition to packaging systems for electronics, a spark-plug type sensor package based on this high temperature interconnection system for high temperature SiC capacitive pressure sensors was also developed and tested. In order to further significantly improve the performance of packaging system for higher packaging density, higher operation frequency, power rating, and even higher temperatures, some fundamental material challenges must be addressed. This presentation will discuss previous development and some of the challenges in material science (technology) to improve high temperature dielectrics for packaging applications.

Summary of Workshop on InP: Status and Prospects

NASA Technical Reports Server (NTRS)

Walters, R. J.; Weinberg, I.

1994-01-01

The primary objective of most of the programs in InP solar cells is the development of the most radiation hard solar cell technology. In the workshop, it was generally agreed that the goal is a cell which displays high radiation tolerance in a radiation environment equivalent to a 1 MeV electron fluence of about 10(exp 16)/sq cm. Furthermore, it is desired that the radiation response of the cell be essentially flat out to this fluence - i.e. that the power output of the cell not decrease from its beginning of life (BOL) value in this radiation environment. It was also agreed in the workshop that the manufacturability of InP solar cells needs to be improved. In particular, since InP wafers are relatively dense and brittle, alternative substrates need to be developed. Research on hetero-epitaxial InP cells grown on Si, Ge, and GaAs substrates is currently underway. The ultimate goal is to develop hetero-epitaxial InP solar cells using a cheap, strong, and lightweight substrate.

Cyclic oxidation behavior of plasma sprayed NiCrAlY/WC-Co/cenosphere coating

NASA Astrophysics Data System (ADS)

Mathapati, Mahantayya; Ramesh M., R.; Doddamani, Mrityunjay

2018-04-01

Components working at elevated temperature like boiler tubes of coal and gas fired power generation plants, blades of gas and steam turbines etc. experience degradation owing to oxidation. Oxidation resistance of such components can be increased by developing protective coatings. In the present investigation NiCrAlY-WC-Co/Cenosphere coating is deposited on MDN 321 steel substrate using plasma spray coating. Thermo cyclic oxidation behavior of coating and substrate is studied in static air at 600 °C for 20 cycles. The thermo gravimetric technique is used to approximate the kinetics of oxidation. X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Energy Dispersive Spectroscopy (EDS) and X-ray mapping techniques are used to characterize the oxidized samples. NiCrAlY-WC-Co/Cenosphere coating exhibited lower oxidation rate in comparison to MDN 321 steel substrate. The lower oxidation rate of coating is attributed to formation of Al2O3, Cr2O3, NiO and CoWO4 oxides on the outermost surface.

Effect of substrate preheating on the photovoltaic performance of ZnO nanorod-based perovskite solar cells

NASA Astrophysics Data System (ADS)

Li, Wei-Shuo; Lin, Tsyr-Rou; Yang, Hsiu-Ting; Li, Yu-Ren; Chuang, Kai-Chi; Li, Yi-Shao; Luo, Jun-Dao; Hus, Chain-Shu; Cheng, Huang-Chung

2018-06-01

In this study, zinc oxide nanorods (ZnO-NRs) grown via a low-temperature hydrothermal growth process are used as the electron transport layer (ETL) owing to their low temperature process and three-dimensional structure, which increases the surface area and thereby improves photovoltaic performance. To further improve the performance of solar cells, substrate preheating before spin-coating PbI2 and perovskite films was conducted. With the increase in preheating temperature, the grain size, surface uniformity, and crystallinity of perovskite increased. Consequently, the photovoltaic performances of the devices with 150-nm-long ZnO-NRs and substrate preheating at 150 °C showed an optimum open-circuit voltage (V oc) of 0.84 V, a short-circuit current (J sc) of 21.43 mA/cm2, a fill factor (FF) of 57.42%, and a power conversion efficiency (PCE) of 10.34% owing to the superior quality of the perovskite films having smooth surfaces with fewer pinholes.

Fabrication of volcano-shaped nano-patterned sapphire substrates using colloidal self-assembly and wet chemical etching.

PubMed

Geng, Chong; Zheng, Lu; Fang, Huajing; Yan, Qingfeng; Wei, Tongbo; Hao, Zhibiao; Wang, Xiaoqing; Shen, Dezhong

2013-08-23

Patterned sapphire substrates (PSS) have been widely used to enhance the light output power in GaN-based light emitting diodes. The shape and feature size of the pattern in a PSS affect its enhancement efficiency to a great degree. In this work we demonstrate the nanoscale fabrication of volcano-shaped PSS using a wet chemical etching approach in combination with a colloidal monolayer templating strategy. Detailed analysis by scanning electron microscopy reveals that the unique pattern shape is a result of the different corrosion-resistant abilities of silica masks of different effective heights during wet chemical etching. The formation of silica etching masks of different effective heights has been ascribed to the silica precursor solution in the interstice of the colloidal monolayer template being distributed unevenly after infiltration. In the subsequent wet chemical etching process, the active reaction sites altered as etching duration was prolonged, resulting in the formation of volcano-shaped nano-patterned sapphire substrates.

Substrateless Welding of Self-Assembled Silver Nanowires at Air/Water Interface.

PubMed

Hu, Hang; Wang, Zhongyong; Ye, Qinxian; He, Jiaqing; Nie, Xiao; He, Gufeng; Song, Chengyi; Shang, Wen; Wu, Jianbo; Tao, Peng; Deng, Tao

2016-08-10

Integrating connected silver nanowire networks with flexible polymers has appeared as a popular way to prepare flexible electronics. To reduce the contact resistance and enhance the connectivity between silver nanowires, various welding techniques have been developed. Herein, rather than welding on solid supporting substrates, which often requires complicated transferring operations and also may pose damage to heat-sensitive substrates, we report an alternative approach to prepare easily transferrable conductive networks through welding of self-assembled silver nanowires at the air/water interface using plasmonic heating. The intriguing welding behavior of partially aligned silver nanowires was analyzed with combined experimental observation and theoretical modeling. The underlying water not only physically supports the assembled silver nanowires but also buffers potential overheating during the welding process, thereby enabling effective welding within a broad range of illumination power density and illumination duration. The welded networks could be directly integrated with PDMS substrates to prepare high-performance stable flexible heaters that are stretchable, bendable, and can be easily patterned to explore selective heating applications.

Rapid Growth of Nanostructured Diamond Film on Silicon and Ti-6Al-4V Alloy Substrates.

PubMed

Samudrala, Gopi K; Vohra, Yogesh K; Walock, Michael J; Miles, Robin

2014-01-13

Nanostructured diamond (NSD) films were grown on silicon and Ti-6Al-4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 µm/h on silicon, and 4 µm/h on Ti-6Al-4V were achieved. In a chemistry of H₂/CH₄/N₂, varying ratios of CH₄/H₂ and N₂/CH₄ were employed in this research and their effect on the resulting diamond films were studied by X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. As a result of modifying the stock cooling stage of CVD system, we were able to utilize plasma with high power densities in our NSD growth experiments, enabling us to achieve high growth rates. Substrate temperature and N₂/CH₄ ratio have been found to be key factors in determining the diamond film quality. NSD films grown as part of this study were shown to contain 85% to 90% sp³ bonded carbon.

Low energy electron irradiation induced carbon etching: Triggering carbon film reacting with oxygen from SiO{sub 2} substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Cheng; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060; Wang, Chao, E-mail: cwang367@szu.edu.cn, E-mail: dfdiao@szu.edu.cn

2016-08-01

We report low-energy (50–200 eV) electron irradiation induced etching of thin carbon films on a SiO{sub 2} substrate. The etching mechanism was interpreted that electron irradiation stimulated the dissociation of the carbon film and SiO{sub 2}, and then triggered the carbon film reacting with oxygen from the SiO{sub 2} substrate. A requirement for triggering the etching of the carbon film is that the incident electron penetrates through the whole carbon film, which is related to both irradiation energy and film thickness. This study provides a convenient electron-assisted etching with the precursor substrate, which sheds light on an efficient pathway to themore » fabrication of nanodevices and nanosurfaces.« less

Preparation of MgO/B₂O₃ coatings by plasma spraying on SUS304 surface and effects of heat-resistant.

PubMed

Song, Bo; Zhou, Ningning; Ju, Dongying

2013-12-01

This study mainly deals with the preparation of MgO/B2O3 coatings by plasma spraying on the SUS304 surface and the effects of heat-resistant. The power materials of low thermal conductivity were selected to control the heat divergent performance of high temperature parts. The reticular micro-structure between the cover thermal layer and the substrate was prepared by using the plasma spraying method. The powder mixture of MgO and B2O3 were selected as spraying materials and the SUS304 was used as the substrate material. The MgO/B2O3 coating was prepared on the surface of the SUS304 to provide better cover thermal performance. The properties of the microstructures and the morphologies were studied by Optical Microscope, Scanning Electron Microscope, Electron Probe Microanalyzer, and X-ray Diffraction. The results showed that the cover thermal performance has been improved. Copyright © 2013 The Research Centre for Eco-Environmental Sciences, Chinese Academy of Sciences. Published by Elsevier B.V. All rights reserved.

Direct mapping of electrical noise sources in molecular wire-based devices

PubMed Central

Cho, Duckhyung; Lee, Hyungwoo; Shekhar, Shashank; Yang, Myungjae; Park, Jae Yeol; Hong, Seunghun

2017-01-01

We report a noise mapping strategy for the reliable identification and analysis of noise sources in molecular wire junctions. Here, different molecular wires were patterned on a gold substrate, and the current-noise map on the pattern was measured and analyzed, enabling the quantitative study of noise sources in the patterned molecular wires. The frequency spectra of the noise from the molecular wire junctions exhibited characteristic 1/f2 behavior, which was used to identify the electrical signals from molecular wires. This method was applied to analyze the molecular junctions comprising various thiol molecules on a gold substrate, revealing that the noise in the junctions mainly came from the fluctuation of the thiol bonds. Furthermore, we quantitatively compared the frequencies of such bond fluctuations in different molecular wire junctions and identified molecular wires with lower electrical noise, which can provide critical information for designing low-noise molecular electronic devices. Our method provides valuable insights regarding noise phenomena in molecular wires and can be a powerful tool for the development of molecular electronic devices. PMID:28233821

Direct mapping of electrical noise sources in molecular wire-based devices

NASA Astrophysics Data System (ADS)

Cho, Duckhyung; Lee, Hyungwoo; Shekhar, Shashank; Yang, Myungjae; Park, Jae Yeol; Hong, Seunghun

2017-02-01

We report a noise mapping strategy for the reliable identification and analysis of noise sources in molecular wire junctions. Here, different molecular wires were patterned on a gold substrate, and the current-noise map on the pattern was measured and analyzed, enabling the quantitative study of noise sources in the patterned molecular wires. The frequency spectra of the noise from the molecular wire junctions exhibited characteristic 1/f2 behavior, which was used to identify the electrical signals from molecular wires. This method was applied to analyze the molecular junctions comprising various thiol molecules on a gold substrate, revealing that the noise in the junctions mainly came from the fluctuation of the thiol bonds. Furthermore, we quantitatively compared the frequencies of such bond fluctuations in different molecular wire junctions and identified molecular wires with lower electrical noise, which can provide critical information for designing low-noise molecular electronic devices. Our method provides valuable insights regarding noise phenomena in molecular wires and can be a powerful tool for the development of molecular electronic devices.

Enhancement of the performance of cadmium sulfide quantum dot solar cells using a platinum-polyaniline counter electrode and a silver nanoparticle-sensitized photoanode

NASA Astrophysics Data System (ADS)

Nourolahi, Hamzeh; Bolorizadeh, Mohammadagha A.; Dorri, Navid; Behjat, Abbas

2017-07-01

A metal-polymer nanocomposite of platinum-polyaniline (Pt/PANI) was deposited on fluorine-doped tin oxide glass substrates to function as a counter electrode for polysulfide redox reactions in cadmium sulfide quantum dot-sensitized solar cells. In addition, front-side illuminated photoelectrodes were sensitized by silver (Ag) nanoparticles (NPs) as an interfacial layer between a transparent conducting oxide substrate and a TiO2 layer. This configuration, i.e., both the Pt/PANI counter electrode and the Ag NPs in the photoanode, leads to 1.92% in the power-conversion efficiency (PCE) of the fabricated cells. A PCE enhancement of around 21% was obtained for the Ag NPs-sensitized photoanodes, as compared with the Ag NPs-free one. The improved performance can be attributed to the easier transport of excited electrons and the inhibition of charge recombination due to the application of an Ag NPs layer. Electrochemical impedance spectroscopy measurements showed that once Ag NPs are incorporated in a photoanode, electron transport time decreases in the photoanode structure.

Transformational electronics: a powerful way to revolutionize our information world

NASA Astrophysics Data System (ADS)

Rojas, Jhonathan P.; Torres Sevilla, Galo A.; Ghoneim, Mohamed T.; Hussain, Aftab M.; Ahmed, Sally M.; Nassar, Joanna M.; Bahabry, Rabab R.; Nour, Maha; Kutbee, Arwa T.; Byas, Ernesto; Al-Saif, Bidoor; Alamri, Amal M.; Hussain, Muhammad M.

2014-06-01

With the emergence of cloud computation, we are facing the rising waves of big data. It is our time to leverage such opportunity by increasing data usage both by man and machine. We need ultra-mobile computation with high data processing speed, ultra-large memory, energy efficiency and multi-functionality. Additionally, we have to deploy energy-efficient multi-functional 3D ICs for robust cyber-physical system establishment. To achieve such lofty goals we have to mimic human brain, which is inarguably the world's most powerful and energy efficient computer. Brain's cortex has folded architecture to increase surface area in an ultra-compact space to contain its neuron and synapses. Therefore, it is imperative to overcome two integration challenges: (i) finding out a low-cost 3D IC fabrication process and (ii) foldable substrates creation with ultra-large-scale-integration of high performance energy efficient electronics. Hence, we show a low-cost generic batch process based on trench-protect-peel-recycle to fabricate rigid and flexible 3D ICs as well as high performance flexible electronics. As of today we have made every single component to make a fully flexible computer including non-planar state-of-the-art FinFETs. Additionally we have demonstrated various solid-state memory, movable MEMS devices, energy harvesting and storage components. To show the versatility of our process, we have extended our process towards other inorganic semiconductor substrates such as silicon germanium and III-V materials. Finally, we report first ever fully flexible programmable silicon based microprocessor towards foldable brain computation and wirelessly programmable stretchable and flexible thermal patch for pain management for smart bionics.

Low-Dimensional Nanomaterials and Molecular Dielectrics for Radiation-Hard Electronics

NASA Astrophysics Data System (ADS)

McMorrow, Julian

The electronic materials research driving Moore's law has provided several decades of increasingly powerful yet simultaneously miniaturized computer technologies. As we approach the physical and practical limits of what can be accomplished with silicon electronics, we look to new materials to drive innovation in future electronic applications. New materials paradigms require the development of understanding from first principles to the demonstration of applications that comes with mature technologies. Semiconducting single-walled carbon nanotubes (SWCNTs), single- and few-layer molybdenum disulfide (MoS2) and self-assembled nanodielectric (SAND) gate materials have all made significant impacts in the research field of unconventional electronic materials. The materials selection, interfaces between materials, processing steps to assemble them, and their interaction with their environment all have significant bearing on the operation of the overall device. Operating in harsh radiation environments, like those of satellites orbiting the Earth, present unique challenges to the functionality and reliability of electronic devices. Because the future of space-bound electronics is often informed by the technology of terrestrial devices, a proactive approach is adopted to identify and understand the radiation response of new materials systems as they emerge and develop. The work discussed here drives the innovation and development of multiple nanomaterial based electronic technologies while simultaneously exploring their relevant radiation response mechanisms. First, collaborative efforts result in the demonstration of a SWCNT-based circuit technology that is solution processed, large-area, and compatible with flexible substrates. The statistical characterization of SWCNT transistors enables the development of robust doping and encapsulation schemes, which make the SWCNT circuits stable, scalable, and low-power. These SWCNTs are then integrated into static random access memory (SRAM) cells, an accomplishment that illustrates the technological relevance of this work by implementing a highly utilized component of modern day computing. Next, these SRAM devices demonstrate functionality as true random number generators (TRNGs), which are critical components in cryptography and encryption. The randomness of these SWCNT TRNGs is verified by a suite of statistical tests. This achievement has implications for securing data and communication in future solution-processed, large-area, flexible electronics. The unprecedented integration achieved by the underlying SWCNT doping and encapsulation motivates the study of this technology in a radiation environment. Doing so results in an understanding of the fundamental charge trapping mechanisms responsible for the radiation response in this system. The integrated nature of these devices enables, for the first time, the observation of system-level effects in a SWCNT integrated circuit technology. This technology is found to be total ionizing dose-hard, a promising result for the adoption of SWCNTs in future space-bound applications. Compared to SWCNTs, the field of MoS2 electronics is relatively nascent. As a result, studies of radiation effects in MoS2 devices focus on the fundamental mechanisms at play in the materials system. Here, we reveal the critical role of atmospheric adsorbates in the radiation effects of MoS2 transistors by measuring their response to vacuum ultraviolet radiation. These results highlight the importance of controlling the atmosphere of MoS2 devices during irradiation. Furthermore, we make recommendations for radiation-hard MoS2-based devices in the future as the technology continues to mature. One such recommendation is the incorporation of specialized dielectrics with proven radiation hardness. To this end, we address the materials integration challenge of incorporating SAND gate dielectrics on arbitrary substrates. We explore a novel approach for preparing metal substrates for SAND deposition, supporting the SAND superlattice structure and its superlative electronic properties on a metal surface. This result is critical for conducting fundamental transport studies when integrating SAND with novel semiconductor materials, as well as enabling complex circuit integration and SAND on flexible substrates. Altogether, these works drive the integration of novel nanoelectronic materials for future electronics while providing an understanding of their varying radiation response mechanisms to enable their adoption in future space-bound applications.

Three-dimensional architecture for solid state radiation detectors

DOEpatents

Parker, S.

1999-03-30

A radiation-damage resistant radiation detector is formed on a substrate formed of a material doped with a first conductivity type dopant. The detector includes at least one first electrode formed of first conductivity type dopant, and at least one second electrode that is spaced-apart from the first electrode and formed of a second conductivity type dopant. Each first and second electrode penetrates into the substrate from a substrate surface, and one or more electrodes may penetrate entirely through the substrate, that is traversing from one surface to the other surface. Particulate and/or electromagnetic radiation penetrating at least a surface of the substrate releases electrons and holes in substrate regions. Because the electrodes may be formed entirely through the substrate thickness, the released charges will be a relatively small distance from at least a portion of such an electrode, e.g., a distance less than the substrate thickness. The electrons and/or holes traverse the small distance and are collected by said electrodes, thus promoting rapid detection of the radiation. By providing one or more electrodes with a dopant profile radially graded in a direction parallel to a substrate surface, an electric field results that promotes rapid collection of released electrons and said holes. Monolithic combinations of such detectors may be fabricated including CMOS electronics to process radiation signals. 45 figs.

Three-dimensional architecture for solid state radiation detectors

DOEpatents

Parker, Sherwood

1999-01-01

A radiation-damage resistant radiation detector is formed on a substrate formed of a material doped with a first conductivity type dopant. The detector includes at least one first electrode formed of first conductivity type dopant, and at least one second electrode that is spaced-apart from the first electrode and formed of a second conductivity type dopant. Each first and second electrode penetrates into the substrate from a substrate surface, and one or more electrodes may penetrate entirely through the substrate, that is traversing from one surface to the other surface. Particulate and/or electromagnetic radiation penetrating at least a surface of the substrate releases electrons and holes in substrate regions. Because the electrodes may be formed entirely through the substrate thickness, the released charges will be a relatively small distance from at least a portion of such an electrode, e.g., a distance less than the substrate thickness. The electrons and/or holes traverse the small distance and are collected by said electrodes, thus promoting rapid detection of the radiation. By providing one or more electrodes with a dopant profile radially graded in a direction parallel to a substrate surface, an electric field results that promotes rapid collection of released electrons and said holes. Monolithic combinations of such detectors may be fabricated including CMOS electronics to process radiation signals.

Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khan, Majid, E-mail: majids@hotmail.com; Islam, Mohammad, E-mail: mohammad.islam@gmail.com

2013-12-15

Molebdenum (Mo) thin films were deposited on well-cleaned soda-lime glass substrates using DC-plasma magnetron sputtering. In the design of experiment deposition was optimized for maximum beneficial characteristics by monitoring effect of process variables such as deposition power (100–200 W). Their electrical, structural and morphological properties were analyzed to study the effect of these variables. The electrical resistivity of Mo thin films could be reduced by increasing deposition power. Within the range of analyzed deposition power, Mo thin films showed a mono crystalline nature and the crystallites were found to have an orientation along [110] direction. The surface morphology of thinmore » films showed that a highly dense micro structure has been obtained. The surface roughness of films increased with deposition power. The adhesion of Mo thin films could be improved by increasing the deposition power. Atomic force microscopy was used for the topographical study of the films and to determine the roughness of the films. X-ray diffractrometer and scanning electron microscopy analysis were used to investigate the crystallinity and surface morphology of the films. Hall effect measurement system was used to find resistivity, carrier mobility and carrier density of deposited films. The adhesion test was performed using scotch hatch tape adhesion test. Mo thin films prepared at deposition power of 200 W, substrate temperature of 23°C and Ar pressure of 0.0123 mbar exhibited a mono crystalline structure with an orientation along (110) direction, thickness of ∼550 nm and electrical resistivity value of 0.57 × 10{sup −4} Ω cm.« less

Novel nano-OLED based probes for very high resolution optical microscopy

NASA Astrophysics Data System (ADS)

Zhao, Yiying

Near-field scanning optical microscopy (NSOM) has been applied in the study of nanomaterials, microelectronics, photonics, plasmonics, cells, and molecules. However, conventional NSOM relies on optically pumped probes, suffering low optical transmission, heating of the tip, and poor reproducibility of probe fabrication, increasing the cost, impeding usability, reducing practical imaging resolution, and limiting NSOM's utility. In this thesis, I demonstrate a novel probe based on a nanoscale, electrically pumped organic light-emitting device (OLED) formed on the tip of a low-cost, commercially available atomic force microscopy (AFM) probe. I describe the structure, fabrication, and principles of this novel probe's operation, and discuss its potential to overcome the limitations of conventional NSOM probes. The broader significance of this work in the field of organic optoelectronics is also discussed. Briefly, OLEDs consist of organic thin films sandwiched between two electrodes. Under bias, electrons and holes are injected into the organic layers, leading to radiative recombination. Depositing a small molecular OLED in vacuum onto a pyramid-tipped AFM probe results in a laminar structure that is highly curved at the tip. Simple electrical modeling predicts concentration of electric field and localized electron injection into the organic layers at the tip, improving the local charge balance in an otherwise electron-starved OLED. Utilizing an "inverted" OLED structure (i.e. cathode on the "bottom"), light emission is localized to sub-200 nm sized, green light emitting regions on probe vertices; light output power in the range of 0.1-0.5 nanowatts was observed, comparable to that of typical fiber based NSOM probes but with greater power efficiency. Massive arrays of similar sub-micron OLEDs were also fabricated by depositing onto textured silicon substrates, demonstrating the superior scalability of the probe fabrication process (e.g. relative to pulled glass fibers). The investigation of the effect of non-planar substrate geometry on charge injection, transport and recombination provides broader insights into OLEDs made on rough substrates, general understanding of OLED operation (e.g. filamentary charge conduction) and degradation, and potentially helps to improve technologically important "inverted" OLED structures.

Substrate removal and electricity generation in a membrane-less microbial fuel cell for biological treatment of wastewater.

PubMed

Wang, Haiping; Jiang, Sunny C; Wang, Yun; Xiao, Bo

2013-06-01

Microbial fuel cells have gained popularity in recent years due to its promise in converting organic wastewater into renewable electrical energy. In this study, a membrane-less MFC with a biocathode was developed to evaluate its performance in electricity generation while simultaneously treating wastewater. The MFC fed with a continuous flow of 2g/day acetate produced a power density of 30 mW/m(2) and current density of 245 mA/m(2). A substrate degradation efficiency (SDE) of 75.9% was achieved with 48.7% attributed to the anaerobic process and 27.2% to the aerobic process. Sequencing analysis of the microbial consortia using 16S rDNA pryosequencing showed the predominance of Bacteroidia in the anode after one month of operation, while the microbial community in the cathode chamber was dominated by Gamma-proteobacteria and Beta-proteobacteria. Coulombic efficiencies varied from 19.8% to 58.1% using different acetate concentrations, indicating power density can be further improved through the accumulation of electron-transferring bacteria. Copyright © 2013 Elsevier Ltd. All rights reserved.

Nanomesh of Cu fabricated by combining nanosphere lithography and high power pulsed magnetron sputtering and a preliminary study about its function

NASA Astrophysics Data System (ADS)

Xie, Wanchuan; Chen, Jiang; Jiang, Lang; Yang, Ping; Sun, Hong; Huang, Nan

2013-10-01

The Cu nanomesh was obtained by a combination of nanosphere lithography (NSL) and high power pulsed magnetron sputtering (HiPPMS). A deposition mask was formed on TiO2 substrates by the self-assembly of polystyrene latex spheres with a diameter of 1 μm, then Cu nanomesh structure was produced on the substrate using sputtering. The structures were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The results show the increase of temperature of the polystyrene mask caused by the thermal radiation from the target and the bombardment of sputtering particles would affect the quality of the final nanopattern. The tests of photocatalytic degradation, platelet adhesion and human umbilical artery smooth muscle cells (HUASMCs) culture show Cu deposition could promote the photocatalytic efficiency of TiO2, affect platelet adhesion and inhibit smooth muscle cell adhesion and proliferation. It is highlighted that these findings may serve as a guide for the research of multifunctional surface structure.

Acoustic emission analysis on tensile failure of steam-side oxide scales formed on T22 alloy superheater tubes

NASA Astrophysics Data System (ADS)

Huang, Jun-Lin; Zhou, Ke-Yi; Wang, Xin-Meng; Tu, Yi-You; Xu, Jian-Qun

2014-07-01

Failure of steam-side oxide scales on boiler tubes can seriously influence the safety of coal-fired power plants. Uniaxial tensile tests employing acoustic emission (AE) monitoring were performed, in this work, to investigate the failure behavior of steam-side oxide scales on T22 alloy boiler superheater tubes. The characteristic frequency spectra of the captured AE signals were obtained by performing fast Fourier transform. Three distinct peak frequency bands, 100-170, 175-250, and 280-390 kHz, encountered in different testing stages were identified in the frequency spectra, which were confirmed to, respectively, correspond to substrate plastic deformation, oxide vertical cracking, and oxide spalling with the aid of scanning electronic microscopy observations, and can thus be used for distinguishing different oxide failure mechanisms. Finally, the critical cracking strain of the oxide scale and the interfacial shear strength of the oxide/substrate interface were estimated, which are the critical parameters urgently desired for modeling the failure behavior of steam-side oxide scales on boiler tubes of coal-fired power plants.

Growth of carbon nanotubes at low powers by impedance-matched microwave plasma enhanced chemical vapor deposition method.

PubMed

Chen, S Y; Chang, L W; Peng, C W; Miao, H Y; Lue, Juh-Tzeng

2005-11-01

A solo carbon nanotube (CNT) was successfully grown on nickel electrodes by a microwave plasma enhanced chemical vapor deposition (MPECVD) method equipped with an impedance-matched substrate holder with the reaction gases composed of hydrogen (H2), carbon dioxide (CO2), and methane (CH4) mixtures. An introduction of carbon dioxide gas before CNTs growth, the substrate temperature can easily be reached above 610 degrees C even heated at a low microwave power. This can be enunciated from fact that carbon dioxide inherits with higher bond energy for molecular dissociation, lower thermal conductivity, and higher heat capacity in comparing to other gases. The electron field emissions for randomly aligned CNTs and well-aligned CNTs grown by MPECVD and by radio frequency assisted hot-filament methods, respectively, are measured and compared. The higher field emission characteristic of the randomly aligned CNTs is presumed to be due to the protruded CNTs, which inheriting with less screening effect and manifesting with defects are crucial to play the effective emission sites.

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

PubMed

Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

2015-09-02

High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

Electronic transport in graphene-based heterostructures

NASA Astrophysics Data System (ADS)

Tan, J. Y.; Avsar, A.; Balakrishnan, J.; Koon, G. K. W.; Taychatanapat, T.; O'Farrell, E. C. T.; Watanabe, K.; Taniguchi, T.; Eda, G.; Castro Neto, A. H.; Özyilmaz, B.

2014-05-01

While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this Letter, we study the surface morphology of 2D BN, gallium selenide (GaSe), and transition metal dichalcogenides (tungsten disulfide (WS2) and molybdenum disulfide (MoS2)) crystals and their influence on graphene's electronic quality. Atomic force microscopy analysis shows that these crystals have improved surface roughness (root mean square value of only ˜0.1 nm) compared to conventional SiO2 substrate. While our results confirm that graphene devices exhibit very high electronic mobility (μ) on BN substrates, graphene devices on WS2 substrates (G/WS2) are equally promising for high quality electronic transport (μ ˜ 38 000 cm2/V s at room temperature), followed by G/MoS2 (μ ˜ 10 000 cm2/V s) and G/GaSe (μ ˜ 2200 cm2/V s). However, we observe a significant asymmetry in electron and hole conduction in G/WS2 and G/MoS2 heterostructures, most likely due to the presence of sulphur vacancies in the substrate crystals. GaSe crystals are observed to degrade over time even under ambient conditions, leading to a large hysteresis in graphene transport making it a less suitable substrate.

Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.

PubMed

Das, Tanmoy; Chen, Xiang; Jang, Houk; Oh, Il-Kwon; Kim, Hyungjun; Ahn, Jong-Hyun

2016-11-01

2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal-oxide-semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS 2 n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly Stretchable and Conductive Superhydrophobic Coating for Flexible Electronics.

PubMed

Su, Xiaojing; Li, Hongqiang; Lai, Xuejun; Chen, Zhonghua; Zeng, Xingrong

2018-03-28

Superhydrophobic materials integrating stretchability with conductivity have huge potential in the emerging application horizons such as wearable electronic sensors, flexible power storage apparatus, and corrosion-resistant circuits. Herein, a facile spraying method is reported to fabricate a durable superhydrophobic coating with excellent stretchable and electrical performance by combing 1-octadecanethiol-modified silver nanoparticles (M-AgNPs) with polystyrene- b-poly(ethylene- co-butylene)- b-polystyrene (SEBS) on a prestretched natural rubber (NR) substrate. The embedding of M-AgNPs in elastic SEBS matrix and relaxation of prestretched NR substrate construct hierarchical rough architecture and endow the coating with dense charge-transport pathways. The fabricated coating exhibits superhydrophobicity with water contact angle larger than 160° and a high conductivity with resistance of about 10 Ω. The coating not only maintains superhydrophobicity at low/high stretch ratio for the newly generated small/large protuberances but also responds to stretching and bending with good sensitivity, broad sensing range, and stable response cycles. Moreover, the coating exhibits excellent durability to heat and strong acid/alkali and mechanical forces including droplet impact, kneading, torsion, and repetitive stretching-relaxation. The findings conceivably stand out as a new tool to fabricate multifunctional superhydrophobic materials with excellent stretchability and conductivity for flexible electronics under wet or corrosive environments.

Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

NASA Astrophysics Data System (ADS)

Gao, Haiyong; Yan, Fawang; Zhang, Yang; Li, Jinmin; Zeng, Yiping; Wang, Guohong

2008-01-01

Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale to enhance the light output power of InGaN/GaN light-emitting diodes (LEDs). InGaN/GaN LEDs on a pyramidal patterned sapphire substrate in the microscale (MPSS) and pyramidal patterned sapphire substrate in the nanoscale (NPSS) were grown by metalorganic chemical vapor deposition. The characteristics of the LEDs fabricated on the MPSS and NPSS prepared by wet etching were studied and the light output powers of the LEDs fabricated on the MPSS and NPSS increased compared with that of the conventional LEDs fabricated on planar sapphire substrates. In comparison with the planar sapphire substrate, an enhancement in output power of about 29% and 48% is achieved with the MPSS and NPSS at an injection current of 20 mA, respectively. This significant enhancement is attributable to the improvement of the epitaxial quality of GaN-based epilayers and the improvement of the light extraction efficiency by patterned sapphire substrates. Additionally, the NPSS is more effective to enhance the light output power than the MPSS.

Large-Scale Direct-Writing of Aligned Nanofibers for Flexible Electronics.

PubMed

Ye, Dong; Ding, Yajiang; Duan, Yongqing; Su, Jiangtao; Yin, Zhouping; Huang, Yong An

2018-05-01

Nanofibers/nanowires usually exhibit exceptionally low flexural rigidities and remarkable tolerance against mechanical bending, showing superior advantages in flexible electronics applications. Electrospinning is regarded as a powerful process for this 1D nanostructure; however, it can only be able to produce chaotic fibers that are incompatible with the well-patterned microstructures in flexible electronics. Electro-hydrodynamic (EHD) direct-writing technology enables large-scale deposition of highly aligned nanofibers in an additive, noncontact, real-time adjustment, and individual control manner on rigid or flexible, planar or curved substrates, making it rather attractive in the fabrication of flexible electronics. In this Review, the ground-breaking research progress in the field of EHD direct-writing technology is summarized, including a brief chronology of EHD direct-writing techniques, basic principles and alignment strategies, and applications in flexible electronics. Finally, future prospects are suggested to advance flexible electronics based on orderly arranged EHD direct-written fibers. This technology overcomes the limitations of the resolution of fabrication and viscosity of ink of conventional inkjet printing, and represents major advances in manufacturing of flexible electronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Computational imaging of defects in commercial substrates for electronic and photonic devices

NASA Astrophysics Data System (ADS)

Fukuzawa, Masayuki; Kashiwagi, Ryo; Yamada, Masayoshi

2012-03-01

Computational defect imaging has been performed in commercial substrates for electronic and photonic devices by combining the transmission profile acquired with an imaging type of linear polariscope and the computational algorithm to extract a small amount of birefringence. The computational images of phase retardation δ exhibited spatial inhomogeneity of defect-induced birefringence in GaP, LiNbO3, and SiC substrates, which were not detected by conventional 'visual inspection' based on simple optical refraction or transmission because of poor sensitivity. The typical imaging time was less than 30 seconds for 3-inch diameter substrate with the spatial resolution of 200 μm, while that by scanning polariscope was 2 hours to get the same spatial resolution. Since our proposed technique have been achieved high sensitivity, short imaging time, and wide coverage of substrate materials, which are practical advantages over the laboratory-scale apparatus such as X-ray topography and electron microscope, it is useful for nondestructive inspection of various commercial substrates in production of electronic and photonic devices.

Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balasubramaniam, Y.; Pobedinskas, P., E-mail: paulius.pobedinskas@uhasselt.be; Janssens, S. D.

2016-08-08

The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 μm thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 μm h{sup −1}. A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 × 10{sup 16} cm{sup −3} phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates formore » future use in high-power electronic applications.« less

Orthogonal feeding techniques for tapered slot antennas

NASA Technical Reports Server (NTRS)

Lee, Richard Q.; Simons, Rainee N.

1998-01-01

For array of "brick" configuration there are electrical and mechanical advantages to feed the antenna with a feed on a substrate perpendicular to the antenna substrate. Different techniques have been proposed for exciting patch antennas using such a feed structure.Rncently, an aperture-coupled dielectric resonator antenna using a perpendicular feed substrate has been demonstrated to have very good power coupling efficiency. For a two-dimensional rectangular array with tapered slot antenna elements, a power combining network on perpendicular substrate is generally required to couple power to or from the array. In this paper, we will describe two aperture-coupled techniques for coupling microwave power from a linearly tapered slot antenna (LTSA) to a microstrip feed on a perpendicular substrate. In addition, we will present measured results for return losses and radiation patterns.

High temperature thermal management with boron nitride nanosheets.

PubMed

Wang, Yilin; Xu, Lisha; Yang, Zhi; Xie, Hua; Jiang, Puqing; Dai, Jiaqi; Luo, Wei; Yao, Yonggang; Hitz, Emily; Yang, Ronggui; Yang, Bao; Hu, Liangbing

2017-12-21

The rapid development of high power density devices requires more efficient heat dissipation. Recently, two-dimensional layered materials have attracted significant interest due to their superior thermal conductivity, ease of production and chemical stability. Among them, hexagonal boron nitride (h-BN) is electrically insulating, making it a promising thermal management material for next-generation electronics. In this work, we demonstrated that an h-BN thin film composed of layer-by-layer laminated h-BN nanosheets can effectively enhance the lateral heat dissipation on the substrate. We found that by using the BN-coated glass instead of bare glass as the substrate, the highest operating temperature of a reduced graphene oxide (RGO) based device could increase from 700 °C to 1000 °C, and at the same input power, the operating temperature of the RGO device is effectively decreased. The remarkable performance improvement using the BN coating originates from its anisotropic thermal conductivity: a high in-plane thermal conductivity of 14 W m -1 K -1 for spreading and a low cross-plane thermal conductivity of 0.4 W m -1 K -1 to avoid a hot spot right underneath the device. Our results provide an effective approach to improve the heat dissipation in integrated circuits and high power devices.

Plasma Sprayed Hydroxyapatite Coatings: Influence of Spraying Power on Microstructure

NASA Astrophysics Data System (ADS)

Mohd, S. M.; Abd, M. Z.; Abd, A. N.

2010-03-01

The plasma sprayed hydroxyapatite (HA) coatings are used on metallic implants to enhance the bonding between the implant and bone in human body. The coating process was implemented at different spraying power for each spraying condition. The coatings formed from a rapid solidification of molten and partly molten particles that impact on the surface of substrate at high velocity and high temperature. The study was concentrated on different spraying power that is between 23 to 31 kW. The effect of different power on the coatings microstructure was investigated using scanning electron microscope (SEM) and phase composition was evaluated using X-ray diffraction (XRD) analysis. The coatings surface morphology showed distribution of molten, partially melted particles and some micro-cracks. The produced coatings were found to be porous as observed from the cross-sectional morphology. The coatings XRD results indicated the presence of crystalline phase of HA and each of the patterns was similar to the initial powder. Regardless of different spraying power, all the coatings were having similar XRD patterns.

Atomic force microscopy and nanoindentation investigation of polydimethylsiloxane elastomeric substrate compliancy for various sputtered thin film morphologies.

PubMed

Maji, Debashis; Das, Soumen

2018-03-01

Crack free electrically continuous metal thin films over soft elastomeric substrates play an integral part in realization of modern day flexible bioelectronics and biosensors. Under nonoptimized deposition conditions, delamination, and/or cracking of the top film as well as the underlying soft substrate hinders optimal performance of these devices. Hence it is very important to understand and control not only the various deposition factors like power, time, or deposition pressure but also investigate the various interfacial physics playing a critical role in assuring thin film adhesion and substrate compliancy. In the present study, various nanomechanical information of the underlying substrate, namely, crack profile, average roughness, Young's modulus, and adhesion force were studied for uncracked and cracked polydimethylsiloxane (PDMS) surfaces along with pristine and conventional plasma treated PDMS samples as control. Quantification of the above parameters were done using three-dimensional surface profiler, scanning electron microscopy, nanoindentation, and atomic force microscopy techniques to elucidate the modulus range, average roughness, and adhesion force. Comparative analysis with control revealed remarkable similarity between increased modulus values, increased surface roughness, and reduced adhesion force accounting for reduced substrate compliancy and resulting in film cracking or buckling which are critical for development of various bioflexible devices. © 2017 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 106A: 725-737, 2018. © 2017 Wiley Periodicals, Inc.

Preliminary investigation of single chamber single electrode microbial fuel cell using sewage sludge as a substrate

NASA Astrophysics Data System (ADS)

Sai Chaithanya, M.; Thakur, Somil; Sonu, Kumar; Das, Bhaskar

2017-11-01

A microbial fuel cell (MFC) consists of a cathode and anode; micro-organisms transfer electrons acquired from the degradation of organic matter in the substrate to anode; and thereby to cathode; by using an external circuit to generate electricity. In the present study, a single chamber single electrode microbial fuel cell has been fabricated to generate electricity from the sludge of the sewage treatment plant at two different ambient temperature range of 25 ± 4°C and 32 ± 4°C under aerobic condition. No work has been done yet by using the single electrode in any MFC system; it is hypothesized that single electrode submerged partially in substrate and rest to atmosphere can function as both cathode and anode. The maximum voltage obtained was about 2890 mV after 80 (hrs) at temperature range of 25 ± 4°C, with surface power density of 1108.29 mW/m2. When the ambient temperature was 32 ± 4°C, maximum voltage obtained was 1652 mV after 40 (hrs.) surface power density reduced to 865.57 mW/m2. When amount of substrate was decreased for certain area of electrode at 25 ± 4°C range, electricity generation decreased and it also shortened the time to reach peak voltage. On the other hand, when the ambient temperature was increased to 32 ± 4°C, the maximum potential energy generated was less than that of previous experiment at 25 ± 4°C for the same substrate Also the time to reach peak voltage decreased to 40 hrs. When comparing with other single chamber single electrode MFC, the present model is generating more electricity that any MFC using sewage sludge as substrate except platinum electrode, which is much costlier that electrode used in the present study.

Uncooled pulsed zinc oxide semiconductor laser

NASA Astrophysics Data System (ADS)

Bogdankevich, O. V.; Darznek, S. A.; Zverev, M. M.; Kostin, N. N.; Krasavina, E. M.

1985-02-01

An optimized ZnO laser which operates at ambient temperature without cooling is reported, along with extension of the design to form a multielement high-power laser. ZnO single crystal plane-parallel wafers 0.22 mm thick, covered with total and semi-transparent coatings, were exposed to a 200 keV electron beam with a 10 nsec pulse and a current density up to 1 kA/sq cm. No damage was observed in the crystals at saturation. A 7 percent maximum efficiency at a reflection coefficient (RC) of 0.4 was associated with a maximum output of 25 kW and a light power density of 3 MW/sq cm. Cementing a ZnO wafer to a sapphire substrate, applying the same type of coatings and working with a RC of 0.6 yielded a maximum power of 300 kW/sq cm.

Scalable fabrication of high-power graphene micro-supercapacitors for flexible and on-chip energy storage

NASA Astrophysics Data System (ADS)

El-Kady, Maher F.; Kaner, Richard B.

2013-02-01

The rapid development of miniaturized electronic devices has increased the demand for compact on-chip energy storage. Microscale supercapacitors have great potential to complement or replace batteries and electrolytic capacitors in a variety of applications. However, conventional micro-fabrication techniques have proven to be cumbersome in building cost-effective micro-devices, thus limiting their widespread application. Here we demonstrate a scalable fabrication of graphene micro-supercapacitors over large areas by direct laser writing on graphite oxide films using a standard LightScribe DVD burner. More than 100 micro-supercapacitors can be produced on a single disc in 30 min or less. The devices are built on flexible substrates for flexible electronics and on-chip uses that can be integrated with MEMS or CMOS in a single chip. Remarkably, miniaturizing the devices to the microscale results in enhanced charge-storage capacity and rate capability. These micro-supercapacitors demonstrate a power density of ~200 W cm-3, which is among the highest values achieved for any supercapacitor.

High-temperature superconductivity in space-charge regions of lanthanum cuprate induced by two-dimensional doping

PubMed Central

Baiutti, F.; Logvenov, G.; Gregori, G.; Cristiani, G.; Wang, Y.; Sigle, W.; van Aken, P. A.; Maier, J.

2015-01-01

The exploitation of interface effects turned out to be a powerful tool for generating exciting material properties. Such properties include magnetism, electronic and ionic transport and even superconductivity. Here, instead of using conventional homogeneous doping to enhance the hole concentration in lanthanum cuprate and achieve superconductivity, we replace single LaO planes with SrO dopant planes using atomic-layer-by-layer molecular beam epitaxy (two-dimensional doping). Electron spectroscopy and microscopy, conductivity measurements and zinc tomography reveal such negatively charged interfaces to induce layer-dependent superconductivity (Tc up to 35 K) in the space-charge zone at the side of the planes facing the substrate, where the strontium (Sr) profile is abrupt. Owing to the growth conditions, the other side exhibits instead a Sr redistribution resulting in superconductivity due to conventional doping. The present study represents a successful example of two-dimensional doping of superconducting oxide systems and demonstrates its power in this field. PMID:26481902

Stress Intensity of Delamination in a Sintered-Silver Interconnection: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeVoto, D. J.; Paret, P. P.; Wereszczak, A. A.

2014-08-01

In automotive power electronics packages, conventional thermal interface materials such as greases, gels, and phase-change materials pose bottlenecks to heat removal and are also associated with reliability concerns. The industry trend is toward high thermal performance bonded interfaces for large-area attachments. However, because of coefficient of thermal expansion mismatches between materials/layers and resultant thermomechanical stresses, adhesive and cohesive fractures could occur, posing a reliability problem. These defects manifest themselves in increased thermal resistance. This research aims to investigate and improve the thermal performance and reliability of sintered-silver for power electronics packaging applications. This has been experimentally accomplished by the synthesismore » of large-area bonded interfaces between metalized substrates and copper base plates that have subsequently been subjected to thermal cycles. A finite element model of crack initiation and propagation in these bonded interfaces will allow for the interpretation of degradation rates by a crack-velocity (V)-stress intensity factor (K) analysis. A description of the experiment and the modeling approach are discussed.« less

Light-Emitting GaAs Nanowires on a Flexible Substrate.

PubMed

Valente, João; Godde, Tillmann; Zhang, Yunyan; Mowbray, David J; Liu, Huiyun

2018-06-18

Semiconductor nanowire-based devices are among the most promising structures used to meet the current challenges of electronics, optics and photonics. Due to their high surface-to-volume ratio and excellent optical and electrical properties, devices with low power, high efficiency and high density can be created. This is of major importance for environmental issues and economic impact. Semiconductor nanowires have been used to fabricate high performance devices, including detectors, solar cells and transistors. Here, we demonstrate a technique for transferring large-area nanowire arrays to flexible substrates while retaining their excellent quantum efficiency in emission. Starting with a defect-free self-catalyzed molecular beam epitaxy (MBE) sample grown on a Si substrate, GaAs core-shell nanowires are embedded in a dielectric, removed by reactive ion etching and transferred to a plastic substrate. The original structural and optical properties, including the vertical orientation, of the nanowires are retained in the final plastic substrate structure. Nanowire emission is observed for all stages of the fabrication process, with a higher emission intensity observed for the final transferred structure, consistent with a reduction in nonradiative recombination via the modification of surface states. This transfer process could form the first critical step in the development of flexible nanowire-based light-emitting devices.

Impact of laser anneal on NiPt silicide texture and chemical composition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feautrier, C.; Ozcan, A. S.; Lavoie, C.

We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. Themore » laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.« less

Impact of laser anneal on NiPt silicide texture and chemical composition

NASA Astrophysics Data System (ADS)

Feautrier, C.; Ozcan, A. S.; Lavoie, C.; Valery, A.; Beneyton, R.; Borowiak, C.; Clément, L.; Pofelski, A.; Salem, B.

2017-06-01

We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. The laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.

System and method for interfacing large-area electronics with integrated circuit devices

DOEpatents

Verma, Naveen; Glisic, Branko; Sturm, James; Wagner, Sigurd

2016-07-12

A system and method for interfacing large-area electronics with integrated circuit devices is provided. The system may be implemented in an electronic device including a large area electronic (LAE) device disposed on a substrate. An integrated circuit IC is disposed on the substrate. A non-contact interface is disposed on the substrate and coupled between the LAE device and the IC. The non-contact interface is configured to provide at least one of a data acquisition path or control path between the LAE device and the IC.

An improved electrical and thermal model of a microbolometer for electronic circuit simulation

NASA Astrophysics Data System (ADS)

Würfel, D.; Vogt, H.

2012-09-01

The need for uncooled infrared focal plane arrays (IRFPA) for imaging systems has increased since the beginning of the nineties. Examples for the application of IRFPAs are thermography, pedestrian detection for automotives, fire fighting, and infrared spectroscopy. It is very important to have a correct electro-optical model for the simulation of the microbolometer during the development of the readout integrated circuit (ROIC) used for IRFPAs. The microbolometer as the sensing element absorbs infrared radiation which leads to a change of its temperature due to a very good thermal insulation. In conjunction with a high temperature coefficient of resistance (TCR) of the sensing material (typical vanadium oxide or amorphous silicon) this temperature change results in a change of the electrical resistance. During readout, electrical power is dissipated in the microbolometer, which increases the temperature continuously. The standard model for the electro-optical simulation of a microbolometer includes the radiation emitted by an observed blackbody, radiation emitted by the substrate, radiation emitted by the microbolometer itself to the surrounding, a heat loss through the legs which connect the microbolometer electrically and mechanically to the substrate, and the electrical power dissipation during readout of the microbolometer (Wood, 1997). The improved model presented in this paper takes a closer look on additional radiation effects in a real IR camera system, for example the radiation emitted by the casing and the lens. The proposed model will consider that some parts of the radiation that is reflected from the casing and the substrate is also absorbed by the microbolometer. Finally, the proposed model will include that some fraction of the radiation is transmitted through the microbolometer at first and then absorbed after the reflection at the surface of the substrate. Compared to the standard model temperature and resistance of the microbolometer can be modelled more realistically when these higher order effects are taken into account. A Verilog-A model for electronic circuit simulations is developed based on the improved thermal model of the microbolometer. Finally, a simulation result of a simple circuit is presented.

Gallium Arsenide Monolithic Optoelectronic Circuits

NASA Astrophysics Data System (ADS)

Bar-Chaim, N.; Katz, J.; Margalit, S.; Ury, I.; Wilt, D.; Yariv, A.

1981-07-01

The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional silicon devices. Monolithic optoelectronic circuits are formed by the integration of optical and electronic devices on a single GaAs substrate. Integration of many devices is most easily accomplished on a semi-insulating (SI) sub-strate. Several laser structures have been fabricated on SI GaAs substrates. Some of these lasers have been integrated with Gunn diodes and with metal semiconductor field effect transistors (MESFETs). An integrated optical repeater has been demonstrated in which MESFETs are used for optical detection and electronic amplification, and a laser is used to regenerate the optical signal. Monolithic optoelectronic circuits have also been constructed on conducting substrates. A heterojunction bipolar transistor driver has been integrated with a laser on an n-type GaAs substrate.

Hydrodynamic and thermal modeling of two-dimensional microdroplet arrays for digitized heat transfer

NASA Astrophysics Data System (ADS)

Baird, Eric S.

This document describes hydrodynamic and thermal modeling of two-dimensional microdroplet arrays for use in digitized heat transfer (DHT), a novel active thermal management technique for high power density electronics and integrated microsystems. In DHT, thermal energy is transported by a discrete array of electrostatically activated microdroplets of liquid metals, alloys or aqueous solutions with the potential of supporting significantly higher heat transfer rates than classical air-cooled heat sinks. Actuation methods for dispensing and transporting individual fluid slugs with a high degree of precision and programmability are described, with simple approximate formulae for net forces for steady state and transient velocities in terms of known parameters. A modified cavity flow solver is developed to provide details on the internal flow properties of a translating microdroplet and used to detail the effects of droplet curvature, internal mixing, Peclet number and other parameters on the heat transfer capabilities of a discretized liquid flow. The concept of Nusselt number is generalized to an individual fluid slug and shown to oscillate with a period equal to the droplet's mixing rate. In whole, DHT is demonstrated to be a viable new alternative for achieving the most important objectives of electronic cooling (i.e., minimization of the maximum substrate temperature, reduction of the substrate temperature gradient and removal of substrate hot spots) and a sound fundamental description of the method's electro-, hydro- and thermodynamics is provided.

Synchrotron Bragg diffraction imaging characterization of synthetic diamond crystals for optical and electronic power device applications1 1

PubMed Central

Tran Thi, Thu Nhi; Morse, J.; Caliste, D.; Fernandez, B.; Eon, D.; Härtwig, J.; Mer-Calfati, C.; Tranchant, N.; Arnault, J. C.; Lafford, T. A.; Baruchel, J.

2017-01-01

Bragg diffraction imaging enables the quality of synthetic single-crystal diamond substrates and their overgrown, mostly doped, diamond layers to be characterized. This is very important for improving diamond-based devices produced for X-ray optics and power electronics applications. The usual first step for this characterization is white-beam X-ray diffraction topography, which is a simple and fast method to identify the extended defects (dislocations, growth sectors, boundaries, stacking faults, overall curvature etc.) within the crystal. This allows easy and quick comparison of the crystal quality of diamond plates available from various commercial suppliers. When needed, rocking curve imaging (RCI) is also employed, which is the quantitative counterpart of monochromatic Bragg diffraction imaging. RCI enables the local determination of both the effective misorientation, which results from lattice parameter variation and the local lattice tilt, and the local Bragg position. Maps derived from these parameters are used to measure the magnitude of the distortions associated with polishing damage and the depth of this damage within the volume of the crystal. For overgrown layers, these maps also reveal the distortion induced by the incorporation of impurities such as boron, or the lattice parameter variations associated with the presence of growth-incorporated nitrogen. These techniques are described, and their capabilities for studying the quality of diamond substrates and overgrown layers, and the surface damage caused by mechanical polishing, are illustrated by examples. PMID:28381981

Paper electronics.

PubMed

Tobjörk, Daniel; Österbacka, Ronald

2011-05-03

Paper is ubiquitous in everyday life and a truly low-cost substrate. The use of paper substrates could be extended even further, if electronic applications would be applied next to or below the printed graphics. However, applying electronics on paper is challenging. The paper surface is not only very rough compared to plastics, but is also porous. While this is detrimental for most electronic devices manufactured directly onto paper substrates, there are also approaches that are compatible with the rough and absorptive paper surface. In this review, recent advances and possibilities of these approaches are evaluated and the limitations of paper electronics are discussed. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible organic light emitting diodes fabricated on biocompatible silk fibroin substrate

NASA Astrophysics Data System (ADS)

Liu, Yuqiang; Xie, Yuemin; Liu, Yuan; Song, Tao; Zhang, Ke-Qin; Liao, Liangsheng; Sun, Baoquan

2015-10-01

Flexible and biodegradable electronics are currently under extensive investigation for biocompatible and environmentally-friendly applications. Synthetic plastic foils are widely used as substrates for flexible electronics. But typical plastic substrates such as polyethylene naphthalate (PEN) could not be degraded in a natural bio-environment. A great demand still exists for a next-generation biocompatible and biodegradable substrate for future application. For example, electronic devices can be potentially integrated into the human body. In this work, we demonstrate that the biocompatible and biodegradable natural silk fibroin (SF) films embedded with silver nanowires (AgNWs) mesh could be employed as conductive transparent substrates to fabricate flexible organic light emitting diodes (OLEDs). Compared with commercial PEN substrates coated with indium tin oxide, the AgNWs/SF composite substrates exhibit a similar sheet resistance of 12 Ω sq-1, a lower surface roughness, as well as a broader light transmission range. Flexible OLEDs based on AgNWs/SF substrates achieve a current efficiency of 19 cd A-1, demonstrating the potential of the flexible AgNWs/SF films as conductive and transparent substrates for next-generation biodegradable devices.

Interface microstructure engineering by high power impulse magnetron sputtering for the enhancement of adhesion

NASA Astrophysics Data System (ADS)

Ehiasarian, A. P.; Wen, J. G.; Petrov, I.

2007-03-01

An excellent adhesion of hard coatings to steel substrates is paramount in practically all application areas. Conventional methods utilize Ar glow etching or cathodic arc discharge pretreatments that have the disadvantage of producing weak interfaces or adding droplets, respectively. One tool for interface engineering is high power impulse magnetron sputtering (HIPIMS). HIPIMS is based on conventional sputtering with extremely high peak power densities reaching 3kWcm-2 at current densities of >2Acm-2. HIPIMS of Cr and Nb was used to prepare interfaces on 304 stainless steel and M2 high speed steel (HSS). During the pretreatment, the substrates were biased to Ubias=-600V and Ubias=-1000V in the environment of a HIPIMS of Cr and Nb plasma. The bombarding flux density reached peak values of 300mAcm-2 and consisted of highly ionized metal plasma containing a high proportion of Cr1+ and Nb1+. Pretreatments were also carried out with Ar glow discharge and filtered cathodic arc as comparison. The adhesion was evaluated for coatings consisting of a 0.3μm thick CrN base layer and a 4μm thick nanolayer stack of CrN /NbN with a period of 3.4nm, hardness of HK0.025=3100, and residual stress of -1.8GPa. For HIPIMS of Cr pretreatment, the adhesion values on M2 HSS reached scratch test critical load values of LC=70N, thus comparing well to LC=51N for interfaces pretreated by arc discharge plasmas and to LC=25N for Ar etching. Cross sectional transmission electron microscopy studies revealed a clean interface and large areas of epitaxial growth in the case of HIPIMS pretreatment. The HIPIMS pretreatment promoted strong registry between the orientation of the coating and polycrystalline substrate grains due to the incorporation of metal ions and the preservation of crystallinity of the substrate. Evidence and conditions for the formation of cube-on-cube epitaxy and axiotaxy on steel and γ-TiAl substrates are presented.

Thin film transistors on plastic substrates with reflective coatings for radiation protection

DOEpatents

Wolfe, Jesse D.; Theiss, Steven D.; Carey, Paul G.; Smith, Patrick M.; Wickboldt, Paul

2003-11-04

Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.

Thin film transistors on plastic substrates with reflective coatings for radiation protection

DOEpatents

Wolfe, Jesse D [Fairfield, CA; Theiss, Steven D [Woodbury, MN; Carey, Paul G [Mountain View, CA; Smith, Patrick M [San Ramon, CA; Wickbold, Paul [Walnut Creek, CA

2006-09-26

Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.

Mogul-Patterned Elastomeric Substrate for Stretchable Electronics.

PubMed

Lee, Han-Byeol; Bae, Chan-Wool; Duy, Le Thai; Sohn, Il-Yung; Kim, Do-Il; Song, You-Joon; Kim, Youn-Jea; Lee, Nae-Eung

2016-04-01

A mogul-patterned stretchable substrate with multidirectional stretchability and minimal fracture of layers under high stretching is fabricated by double photolithography and soft lithography. Au layers and a reduced graphene oxide chemiresistor on a mogul-patterned poly(dimethylsiloxane) substrate are stable and durable under various stretching conditions. The newly designed mogul-patterned stretchable substrate shows great promise for stretchable electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of substrate on the femtosecond laser-induced damage properties of gold films

NASA Astrophysics Data System (ADS)

Huang, Haopeng; Wang, Leilei; Kong, Fanyu; Xia, Zhilin; Jin, Yunxia; Xu, Jiao; Chen, Junming; Cui, Yun; Shao, Jianda

2018-07-01

In this work, gold films on two different types of substrates were fabricated by electron beam (e-beam) evaporation, and the femtosecond laser-induced damage properties were evaluated. The first sample was gold film deposited on fused silica, whereas the second was gold deposited on photoresist. 1-on-1 damage tests were implemented by an 800 ± 30 nm laser with pulse duration of 30 fs. Different damage thresholds and morphologies were obtained for the two samples. The damage threshold of the gold film on fused silica was 0.64 J/cm2, with the typical damage morphology of thermal ablation and melting; the damage threshold of the gold film on photoresist was 0.30 J/cm2, with the typical damage morphology of blisters or peeling off. In order to better understand the impact of the substrate on the properties of the whole sample, the normalized electric field intensity, temperature, and thermal stress distributions were calculated. The adhesion between the gold film and substrate were measured and the experimental results well agreed with the theoretical analysis. The results indicate that gold films deposited onto grating-structured fused silica will have more powerful laser damage resistance performance.

Flexible bottom-gate graphene transistors on Parylene C substrate and the effect of current annealing

PubMed Central

Kim, Hyungsoo; Bong, Jihye; Mikael, Solomon; Kim, Tong June; Williams, Justin C.; Ma, Zhenqiang

2016-01-01

Flexible graphene transistors built on a biocompatible Parylene C substrate would enable active circuitry to be integrated into flexible implantable biomedical devices. An annealing method to improve the performance of a flexible transistor without damaging the flexible substrate is also desirable. Here, we present a fabrication method of a flexible graphene transistor with a bottom-gate coplanar structure on a Parylene C substrate. Also, a current annealing method and its effect on the device performance have been studied. The localized heat generated by the current annealing method improves the drain current, which is attributed to the decreased contact resistance between graphene and S/D electrodes. A maximum current annealing power in the Parylene C-based graphene transistor has been extracted to provide a guideline for an appropriate current annealing. The fabricated flexible graphene transistor shows a field-effect mobility, maximum transconductance, and a Ion/Ioff ratio of 533.5 cm2/V s, 58.1 μS, and 1.76, respectively. The low temperature process and the current annealing method presented here would be useful to fabricate two-dimensional materials-based flexible electronics. PMID:27795570

Planar digital nanoliter dispensing system based on thermocapillary actuation.

PubMed

Darhuber, Anton A; Valentino, Joseph P; Troian, Sandra M

2010-04-21

We provide guidelines for the design and operation of a planar digital nanodispensing system based on thermocapillary actuation. Thin metallic microheaters embedded within a chemically patterned glass substrate are electronically activated to generate and control 2D surface temperature distributions which either arrest or trigger liquid flow and droplet formation on demand. This flow control is a consequence of the variation of a liquid's surface tension with temperature, which is used to draw liquid toward cooler regions of the supporting substrate. A liquid sample consisting of several microliters is placed on a flat rectangular supply cell defined by chemical patterning. Thermocapillary switches are then activated to extract a slender fluid filament from the cell and to divide the filament into an array of droplets whose position and volume are digitally controlled. Experimental results for the power required to extract a filament and to divide it into two or more droplets as a function of geometric and operating parameters are in excellent agreement with hydrodynamic simulations. The capability to dispense ultralow volumes onto a 2D substrate extends the functionality of microfluidic devices based on thermocapillary actuation previously shown effective in routing and mixing nanoliter liquid samples on glass or silicon substrates.

Wearable Electricity Generators Fabricated Utilizing Transparent Electronic Textiles Based on Polyester/Ag Nanowires/Graphene Core-Shell Nanocomposites.

PubMed

Wu, Chaoxing; Kim, Tae Whan; Li, Fushan; Guo, Tailiang

2016-07-26

The technological realization of wearable triboelectric generators is attractive because of their promising applications in wearable self-powered intelligent systems. However, the low electrical conductivity, the low electrical stability, and the low compatibility of current electronic textiles (e-textiles) and clothing restrict the comfortable and aesthetic integration of wearable generators into human clothing. Here, we present high-performance, transparent, smart e-textiles that employ commercial textiles coated with silver nanowire/graphene sheets fabricated by using a scalable, environmentally friendly, full-solution process. The smart e-textiles show superb and stable conduction of below 20 Ω/square as well as excellent flexibility, stretchability, foldability, and washability. In addition, wearable electricity-generating textiles, in which the e-textiles act as electrodes as well as wearable substrates, are presented. Because of the high compatibility of smart e-textiles and clothing, the electricity-generating textiles can be easily integrated into a glove to harvest the mechanical energy induced by the motion of the fingers. The effective output power generated by a single generator due to that motion reached as high as 7 nW/cm(2). The successful demonstration of the electricity-generating glove suggests a promising future for polyester/Ag nanowire/graphene core-shell nanocomposite-based smart e-textiles for real wearable electronic systems and self-powered clothing.

Three-Dimensional Printed Poly(vinyl alcohol) Substrate with Controlled On-Demand Degradation for Transient Electronics.

PubMed

Yoon, Jinsu; Han, Jungmin; Choi, Bongsik; Lee, Yongwoo; Kim, Yeamin; Park, Jinhee; Lim, Meehyun; Kang, Min-Ho; Kim, Dae Hwan; Kim, Dong Myong; Kim, Sungho; Choi, Sung-Jin

2018-05-25

Electronics that degrade after stable operation for a desired operating time, called transient electronics, are of great interest in many fields, including biomedical implants, secure memory devices, and environmental sensors. Thus, the development of transient materials is critical for the advancement of transient electronics and their applications. However, previous reports have mostly relied on achieving transience in aqueous solutions, where the transience time is largely predetermined based on the materials initially selected at the beginning of the fabrication. Therefore, accurate control of the transience time is difficult, thereby limiting their application. In this work, we demonstrate transient electronics based on a water-soluble poly(vinyl alcohol) (PVA) substrate on which carbon nanotube (CNT)-based field-effect transistors were fabricated. We regulated the structural parameters of the PVA substrate using a three-dimensional (3D) printer to accurately control and program the transience time of the PVA substrate in water. The 3D printing technology can produce complex objects directly, thus enabling the efficient fabrication of a transient substrate with a prescribed and controlled transience time. In addition, the 3D printer was used to develop a facile method for the selective and partial destruction of electronics.

Electronic structures of 1-ML C84/Ag(111): Energy level alignment and work function variation

NASA Astrophysics Data System (ADS)

Wang, Peng; Zhao, Li-Li; Zhang, Jin-Juan; Li, Wen-Jie; Liu, Wei-Hui; Chen, Da; Sheng, Chun-Qi; Wang, Jia-Ou; Qian, Hai-Jie; Ibrahim, Kurash; Li, Hong-Nian

2017-12-01

The electronic structures of fullerene/metal interface are critical to the performance of devices based on fullerene in molecular electronics and organic electronics. Herein, we investigate the electronic structures at the interface between C84 and Ag(111) by photoelectron spectroscopy and soft X-ray absorption spectroscopy techniques. It is observed that C84 monolayer on Ag(111) surface (1-ML C84/Ag(111)) has metallic nature. A charge transfer from substrate to the unoccupied states of C84 is determined to be 1.3 electrons per molecule. However, the work function of 1-ML C84 (4.72 eV) is observed slightly larger than that of the clean Ag(111) substrate (4.50 eV). A bidirectional charge transfer model is introduced to understand the work function variation of the fullerene/metal system. In addition to the charge transfer from substrate to the adsorbate's unoccupied states, there exists non-negligible back charge transfer from fullerene occupied molecular orbital to the metal substrate through interfacial hybridization. The Fermi level will be pinned at ∼4.72 eV for C84 monolayer on coinage metal substrate.

Nanofabrication of densely packed metal-polymer arrays for surface-enhanced Raman spectrometry.

PubMed

De Jesús, M A; Giesfeldt, K S; Oran, J M; Abu-Hatab, N A; Lavrik, N V; Sepaniak, M J

2005-12-01

A key element to improve the analytical capabilities of surface-enhanced Raman spectroscopy (SERS) resides in the performance characteristics of the SERS-active substrate. Variables such as shape, size, and homogeneous distribution of the metal nanoparticles throughout the substrate surface are important in the design of more analytically sensitive and reliable substrates. Electron-beam lithography (EBL) has emerged as a powerful tool for the systematic fabrication of substrates with periodic nanoscale features. EBL also allows the rational design of nanoscale features that are optimized to the frequency of the Raman laser source. In this work, the efficiency of EBL fabricated substrates are studied by measuring the relative SERS signals of Rhodamine 6G and 1,10-phenanthro-line adsorbed on a series of cubic, elliptical, and hexagonal nanopatterned pillars of ma-N 2403 directly coated by physical vapor deposition with 25 nm films of Ag or Au. The raw analyte SERS signals, and signals normalized to metal nanoparticle surface area or numbers of loci, are used to study the effects of nanoparticle morphology on the performance of a rapidly created, diverse collection of substrates. For the excitation wavelength used, the nanoparticle size, geometry, and orientation of the particle primary axis relative to the excitation polarization vector, and particularly the density of nanoparticles, are shown to strongly influence substrate performance. A correlation between the inverse of the magnitude of the laser backscatter passed by the spectrometer and SERS activities of the various substrate patterns is also noted and provides a simple means to evaluate possible efficient coupling of the excitation radiation to localized surface plasmons for Raman enhancement.

Density gradient free electron collisionally excited x-ray laser

DOEpatents

Campbell, E.M.; Rosen, M.D.

1984-11-29

An operational x-ray laser is provided that amplifies 3p-3s transition x-ray radiation along an approximately linear path. The x-ray laser is driven by a high power optical laser. The driving line focused optical laser beam illuminates a free-standing thin foil that may be associated with a substrate for improved structural integrity. This illumination produces a generally cylindrically shaped plasma having an essentially uniform electron density and temperature, that exists over a long period of time, and provides the x-ray laser gain medium. The x-ray laser may be driven by more than one optical laser beam. The x-ray laser has been successfully demonstrated to function in a series of experimental tests.

Electronic structure of graphene- and BN-supported phosphorene

NASA Astrophysics Data System (ADS)

Davletshin, Artur R.; Ustiuzhanina, Svetlana V.; Kistanov, Andrey A.; Saadatmand, Danial; Dmitriev, Sergey V.; Zhou, Kun; Korznikova, Elena A.

2018-04-01

By using first-principles calculations, the effects of graphene and boron nitride (BN) substrates on the electronic properties of phosphorene are studied. Graphene-supported phosphorene is found to be metallic, while the BN-supported phosphorene is a semiconductor with a moderate band gap of 1.02 eV. Furthermore, the effects of the van der Waals interactions between the phosphorene and graphene or BN layers by means of the interlayer distance change are investigated. It is shown that the interlayer distance change leads to significant band gap size modulations and direct-indirect band gap transitions in the phosphorene-BN heterostructure. The presented band gap engineering of phosphorene may be a powerful technique for the fabrication of high-performance phosphorene-based nanodevices.

Processing of silicon solar cells by ion implantation and laser annealing

NASA Technical Reports Server (NTRS)

Minnucci, J. A.; Matthei, K. W.; Greenwald, A. C.

1981-01-01

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

On Substrate for Atomic Chain Electronics

NASA Technical Reports Server (NTRS)

Yamada, Toshishige; Bauschlicher, Charles W., Jr.; Partridge, Harry; Saini, Subhash (Technical Monitor)

1998-01-01

A substrate for future atomic chain electronics, where adatoms are placed at designated positions and form atomically precise device components, is studied theoretically. The substrate has to serve as a two-dimensional template for adatom mounting with a reasonable confinement barrier and also provide electronic isolation, preventing unwanted coupling between independent adatom structures. However, the two requirements conflict. For excellent electronic isolation, we may seek adatom confinement via van der Waals interaction without chemical bonding to the substrate atoms, but the confinement turns out to be very weak and hence unsatisfactory. An alternative chemical bonding scheme with excellent structural strength is examined, but even fundamental adatom chain properties such as whether chains are semiconducting or metallic are strongly influenced by the nature of the chemical bonding, and electronic isolation is not always achieved. Conditions for obtaining semiconducting chains with well-localized surface-modes, leading to good isolation, are clarified and discussed.

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

NASA Technical Reports Server (NTRS)

1996-01-01

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Investigation of ionized metal flux in enhanced high power impulse magnetron sputtering discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stranak, Vitezslav, E-mail: stranak@prf.jcu.cz; Hubicka, Zdenek; Cada, Martin

2014-04-21

The metal ionized flux fraction and production of double charged metal ions Me{sup 2+} of different materials (Al, Cu, Fe, Ti) by High Power Impulse Magnetron Sputtering (HiPIMS) operated with and without a pre-ionization assistance is compared in the paper. The Electron Cyclotron Wave Resonance (ECWR) discharge was employed as the pre-ionization agent providing a seed of charge in the idle time of HiPIMS pulses. A modified grid-free biased quartz crystal microbalance was used to estimate the metal ionized flux fraction ξ. The energy-resolved mass spectrometry served as a complementary method to distinguish particular ion contributions to the total ionizedmore » flux onto the substrate. The ratio between densities of doubly Me{sup 2+} and singly Me{sup +} charged metal ions was determined. It is shown that ECWR assistance enhances Me{sup 2+} production with respect of absorbed rf-power. The ECWR discharge also increases the metal ionized flux fraction of about 30% especially in the region of lower pressures. Further, the suppression of the gas rarefaction effect due to enhanced secondary electron emission of Me{sup 2+} was observed.« less

A flexible Li-ion battery with design towards electrodes electrical insulation

NASA Astrophysics Data System (ADS)

Vieira, E. M. F.; Ribeiro, J. F.; Sousa, R.; Correia, J. H.; Goncalves, L. M.

2016-08-01

The application of micro electromechanical systems (MEMS) technology in several consumer electronics leads to the development of micro/nano power sources with high power and MEMS integration possibility. This work presents the fabrication of a flexible solid-state Li-ion battery (LIB) (~2.1 μm thick) with a design towards electrodes electrical insulation, using conventional, low cost and compatible MEMS fabrication processes. Kapton® substrate provides flexibility to the battery. E-beam deposited 300 nm thick Ge anode was coupled with LiCoO2/LiPON (cathode/solid-state electrolyte) in a battery system. LiCoO2 and LiPON films were deposited by RF-sputtering with a power source of 120 W and 100 W, respectively. LiCoO2 film was annealed at 400 °C after deposition. The new design includes Si3N4 and LiPO thin-films, providing electrode electrical insulation and a battery chemical stability safeguard, respectively. Microstructure and battery performance were investigated by scanning electron microscopy, electric resistivity and electrochemical measurements (open circuit potential, charge/discharge cycles and electrochemical impedance spectroscopy). A rechargeable thin-film and lightweight flexible LIB using MEMS processing compatible materials and techniques is reported.

Modification of graphene by ion beam

NASA Astrophysics Data System (ADS)

Gawlik, G.; Ciepielewski, P.; Jagielski, J.; Baranowski, J.

2017-09-01

Ion induced defect generation in graphene was analyzed using Raman spectroscopy. A single layer graphene membrane produced by chemical vapor deposition (CVD) on copper foil and then transferred on glass substrate was subjected to helium, carbon, nitrogen, argon and krypton ions bombardment at energies from the range 25 keV to 100 keV. A density of ion induced defects and theirs mean size were estimated by using Raman measurements. Increasing number of defects generated by ion with increase of ion mass and decrease of ion energy was observed. Dependence of ion defect efficiency (defects/ion) on ion mass end energy was proportional to nuclear stopping power simulated by SRIM. No correlation between ion defect efficiency and electronic stopping power was observed.

Bandgap-Engineered Zinc-Tin-Oxide Thin Films for Ultraviolet Sensors.

PubMed

Cheng, Tien-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn

2018-07-01

Zinc-tin-oxide thin-film transistors were prepared by radio frequency magnetron co-sputtering, while an identical zinc-tin-oxide thin film was deposited simultaneously on a clear glass substrate to facilitate measurements of the optical properties. When we adjusted the deposition power of ZnO and SnO2, the bandgap of the amorphous thin film was dominated by the deposition power of SnO2. Since the thin-film transistor has obvious absorption in the ultraviolet region owing to the wide bandgap, the drain current increases with the generation of electron-hole pairs. As part of these investigations, a zinc-tin-oxide thin-film transistor has been fabricated that appears to be very promising for ultraviolet applications.

SVGA and XGA active matrix microdisplays for head-mounted applications

NASA Astrophysics Data System (ADS)

Alvelda, Phillip; Bolotski, Michael; Brown, Imani L.

2000-03-01

The MicroDisplay Corporation's liquid crystal on silicon (LCOS) display devices are based on the union of several technologies with the extreme integration capability of conventionally fabricated CMOS substrates. The fast liquid crystal operation modes and new scalable high-performance pixel addressing architectures presented in this paper enable substantially improved color, contrast, and brightness while still satisfying the optical, packaging, and power requirements of portable applications. The entire suite of MicroDisplay's technologies was devised to create a line of mixed-signal application-specific integrated circuits (ASICs) in single-chip display systems. Mixed-signal circuits can integrate computing, memory, and communication circuitry on the same substrate as the display drivers and pixel array for a multifunctional complete system-on-a-chip. System-on-a-chip benefits also include reduced head supported weight requirements through the elimination of off-chip drive electronics.

Role of Hole Trap Sites in MoS2 for Inconsistency in Optical and Electrical Phenomena.

PubMed

Tran, Minh Dao; Kim, Ji-Hee; Kim, Hyun; Doan, Manh Ha; Duong, Dinh Loc; Lee, Young Hee

2018-03-28

Because of strong Coulomb interaction in two-dimensional van der Waals-layered materials, the trap charges at the interface strongly influence the scattering of the majority carriers and thus often degrade their electrical properties. However, the photogenerated minority carriers can be trapped at the interface, modulate the electron-hole recombination, and eventually influence the optical properties. In this study, we report the role of the hole trap sites on the inconsistency in the electrical and optical phenomena between two systems with different interfacial trap densities, which are monolayer MoS 2 -based field-effect transistors (FETs) on hexagonal boron nitride (h-BN) and SiO 2 substrates. Electronic transport measurements indicate that the use of h-BN as a gate insulator can induce a higher n-doping concentration of the monolayer MoS 2 by suppressing the free-electron transfer from the intrinsically n-doped MoS 2 to the SiO 2 gate insulator. Nevertheless, optical measurements show that the electron concentration in MoS 2 /SiO 2 is heavier than that in MoS 2 /h-BN, manifested by the relative red shift of the A 1g Raman peak. The inconsistency in the evaluation of the electron concentration in MoS 2 by electrical and optical measurements is explained by the trapping of the photogenerated holes in the spatially modulated valence band edge of the monolayer MoS 2 caused by the local strain from the SiO 2 /Si substrate. This photoinduced electron doping in MoS 2 /SiO 2 is further confirmed by the development of the trion component in the power-dependent photoluminescence spectra and negative shift of the threshold voltage of the FET after illumination.

Design of hybrid nanoheterostructure systems for enhanced quantum and solar conversion efficiencies in dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Kılıç, Bayram; Telli, Hakan; Tüzemen, Sebahattin; Başaran, Ali; Pirge, Gursev

2015-04-01

Dye sensitized solar cells (DSSCs) with an innovative design involving controlled-morphology vertically aligned (VA) ZnO nanowires within mesoporous TiO2 structures with ultrahigh surface area for implementation as photoanodes are herein reported. Although TiO2 nanostructures exhibit excellent power conversion efficiency, the electron transport rate is low owing to low electron mobility. To overcome this, ZnO nanowires with high electron mobility have been investigated as potential candidates for photoanodes. However, the power conversion efficiency of ZnO nanowires is still lower than that of TiO2 owing to their low internal surface area. Consequently, in this work, vertical growth of ZnO nanowires within mesoporous TiO2 structures is carried out to increase their solar power conversion efficiency. The photovoltaic performance of solar cells using ZnO nanowires, mesoporous TiO2, and TiO2/ZnO hybrid structures are compared. The VA TiO2/ZnO hybrid structures are found to provide direct electron transfer compared with the tortuous pathway of zero-dimensional nanostructures, resulting in an increased conversion efficiency. It is demonstrated that the light scattering of the photoanode film is increased and electron recombination is decreased when an appropriate amount of mesoporous TiO2 is used as a substrate for ZnO nanowires. The DSSC fabricated with the TiO2/ZnO hybrid photoanode prepared with 15.8 wt. % TiO2 showed the highest conversion efficiency of 7.30%, approximately 5%, 18%, and 40% higher than that of DSSCs fabricated with 3.99 wt. % TiO2, pure TiO2, and pure ZnO photoanodes, respectively.

Highly adhesive and high fatigue-resistant copper/PET flexible electronic substrates

NASA Astrophysics Data System (ADS)

Park, Sang Jin; Ko, Tae-Jun; Yoon, Juil; Moon, Myoung-Woon; Oh, Kyu Hwan; Han, Jun Hyun

2018-01-01

A voidless Cu/PET substrate is fabricated by producing a superhydrophilic PET surface comprised of nanostructures with large width and height and then by Cu electroless plating. Effect of PET surface nanostructure size on the failure mechanism of the Cu/PET substrate is studied. The fabricated Cu/PET substrate exhibits a maximum peel strength of 1300 N m-1 without using an interlayer, and virtually no increase in electrical resistivity under the extreme cyclic bending condition of 1 mm curvature radius after 300 k cycles. The authors find that there is an optimum nanostructure size for the highest Cu/PET adhesion strength, and the failure mechanism of the Cu/PET flexible substrate depends on the PET surface nanostructure size. Thus, this work presents the possibility to produce flexible metal/polymer electronic substrates that have excellent interfacial adhesion between the metal and polymer and high fatigue resistance against repeated bending. Such metal/polymer substrates provides new design opportunities for wearable electronic devices that can withstand harsh environments and have extended lifetimes.

Virtual substrate method for nanomaterials characterization

PubMed Central

Da, Bo; Liu, Jiangwei; Yamamoto, Mahito; Ueda, Yoshihiro; Watanabe, Kazuyuki; Cuong, Nguyen Thanh; Li, Songlin; Tsukagoshi, Kazuhito; Yoshikawa, Hideki; Iwai, Hideo; Tanuma, Shigeo; Guo, Hongxuan; Gao, Zhaoshun; Sun, Xia; Ding, Zejun

2017-01-01

Characterization techniques available for bulk or thin-film solid-state materials have been extended to substrate-supported nanomaterials, but generally non-quantitatively. This is because the nanomaterial signals are inevitably buried in the signals from the underlying substrate in common reflection-configuration techniques. Here, we propose a virtual substrate method, inspired by the four-point probe technique for resistance measurement as well as the chop-nod method in infrared astronomy, to characterize nanomaterials without the influence of underlying substrate signals from four interrelated measurements. By implementing this method in secondary electron (SE) microscopy, a SE spectrum (white electrons) associated with the reflectivity difference between two different substrates can be tracked and controlled. The SE spectrum is used to quantitatively investigate the covering nanomaterial based on subtle changes in the transmission of the nanomaterial with high efficiency rivalling that of conventional core-level electrons. The virtual substrate method represents a benchmark for surface analysis to provide ‘free-standing' information about supported nanomaterials. PMID:28548114

Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lovygin, M. V., E-mail: lemi@miee.ru; Borgardt, N. I.; Seibt, M.

2015-12-15

The results of electron-microscopy studies of a thin epitaxial aluminum layer deposited onto a misoriented gallium-arsenide substrate are reported. It is established that the layer consists of differently oriented grains, whose crystal lattices are coherently conjugated with the substrate with the formation of misfit dislocations, as in the case of a layer on a singular substrate. Atomic steps on the substrate surface are visualized, and their influence on the growth of aluminum crystal grains is discussed.

Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si(111)

NASA Astrophysics Data System (ADS)

Ravikiran, L.; Radhakrishnan, K.; Dharmarasu, N.; Agrawal, M.; Wang, Zilong; Bruno, Annalisa; Soci, Cesare; Lihuang, Tng; Kian Siong, Ang

2016-09-01

GaN Schottky metal-semiconductor-metal (MSM) UV photodetectors were fabricated on a 600 nm thick GaN layer, grown on 100 mm Si (111) substrate using an ammonia-MBE growth technique. In this report, the effect of device dimensions, applied bias and input power on the linearity of the GaN Schottky-based MSM photodetectors on Si substrate were investigated. Devices with larger interdigitated spacing, ‘S’ of 9.0 μm between the fingers resulted in good linearity and flat responsivity characteristics as a function of input power with an external quantum efficiency (EQE) of ˜33% at an applied bias of 15 V and an input power of 0.8 W m-2. With the decrease of ‘S’ to 3.0 μm, the EQE was found to increase to ˜97%. However, devices showed non linearity and drop in responsivity from flatness at higher input power. Moreover, the position of dropping from flatter responsivity was found to shift to lower powers with increased bias. The drop in the responsivity was attributed to the modulation of conductance in the MSM due to the trapping of electrons at the dislocations, resulting in the formation of depletion regions around them. In devices with lower ‘S’, both the image force reduction and the enhanced collection efficiency increased the photocurrent as well as the charging of the dislocations. This resulted in the increased depletion regions around the dislocations leading to the modulation of conductance and non-linearity.

High-efficiency S-band harmonic tuning GaN amplifier

NASA Astrophysics Data System (ADS)

Cao, Meng-Yi; Zhang, Kai; Chen, Yong-He; Zhang, Jin-Cheng; Ma, Xiao-Hua; Hao, Yue

2014-03-01

In this paper, we present a high-efficiency S-band gallium nitride (GaN) power amplifier (PA). This amplifier is fabricated based on a self-developed GaN high-electron-mobility transistor (HEMT) with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2nd harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm (~70 W) with a power-added efficiency (PAE) of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz (20% relative bandwidth), the amplifier provides an output power higher than 48 dBm (~ 65 W), with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave (CW) operating conditions, the amplifier gives an output power over 46 dBm (40 W) with PAE beyond 60% over the whole operation frequency range.

Emerging Carbon and Post-Carbon Nanomaterial Inks for Printed Electronics.

PubMed

Secor, Ethan B; Hersam, Mark C

2015-02-19

Carbon and post-carbon nanomaterials present desirable electrical, optical, chemical, and mechanical attributes for printed electronics, offering low-cost, large-area functionality on flexible substrates. In this Perspective, recent developments in carbon nanomaterial inks are highlighted. Monodisperse semiconducting single-walled carbon nanotubes compatible with inkjet and aerosol jet printing are ideal channels for thin-film transistors, while inkjet, gravure, and screen-printable graphene-based inks are better-suited for electrodes and interconnects. Despite the high performance achieved in prototype devices, additional effort is required to address materials integration issues encountered in more complex systems. In this regard, post-carbon nanomaterial inks (e.g., electrically insulating boron nitride and optically active transition-metal dichalcogenides) present promising opportunities. Finally, emerging work to extend these nanomaterial inks to three-dimensional printing provides a path toward nonplanar devices. Overall, the superlative properties of these materials, coupled with versatile assembly by printing techniques, offer a powerful platform for next-generation printed electronics.

Polymer-metal hybrid transparent electrodes for flexible electronics

NASA Astrophysics Data System (ADS)

Kang, Hongkyu; Jung, Suhyun; Jeong, Soyeong; Kim, Geunjin; Lee, Kwanghee

2015-03-01

Despite nearly two decades of research, the absence of ideal flexible and transparent electrodes has been the largest obstacle in realizing flexible and printable electronics for future technologies. Here we report the fabrication of ‘polymer-metal hybrid electrodes’ with high-performance properties, including a bending radius <1 mm, a visible-range transmittance>95% and a sheet resistance <10 Ω sq-1. These features arise from a surface modification of the plastic substrates using an amine-containing nonconjugated polyelectrolyte, which provides ideal metal-nucleation sites with a surface-density on the atomic scale, in combination with the successive deposition of a facile anti-reflective coating using a conducting polymer. The hybrid electrodes are fully functional as universal electrodes for high-end flexible electronic applications, such as polymer solar cells that exhibit a high power conversion efficiency of 10% and polymer light-emitting diodes that can outperform those based on transparent conducting oxides.

Polymer-metal hybrid transparent electrodes for flexible electronics

PubMed Central

Kang, Hongkyu; Jung, Suhyun; Jeong, Soyeong; Kim, Geunjin; Lee, Kwanghee

2015-01-01

Despite nearly two decades of research, the absence of ideal flexible and transparent electrodes has been the largest obstacle in realizing flexible and printable electronics for future technologies. Here we report the fabrication of ‘polymer-metal hybrid electrodes’ with high-performance properties, including a bending radius <1 mm, a visible-range transmittance>95% and a sheet resistance <10 Ω sq−1. These features arise from a surface modification of the plastic substrates using an amine-containing nonconjugated polyelectrolyte, which provides ideal metal-nucleation sites with a surface-density on the atomic scale, in combination with the successive deposition of a facile anti-reflective coating using a conducting polymer. The hybrid electrodes are fully functional as universal electrodes for high-end flexible electronic applications, such as polymer solar cells that exhibit a high power conversion efficiency of 10% and polymer light-emitting diodes that can outperform those based on transparent conducting oxides. PMID:25790133

Silicon/Carbon Nanotube Photocathode for Splitting Water

NASA Technical Reports Server (NTRS)

Amashukeli, Xenia; Manohara, Harish; Greer, Harold F.; Hall, Lee J.; Gray, Harry B.; Subbert, Bryan

2013-01-01

A proof-of-concept device is being developed for hydrogen gas production based on water-splitting redox reactions facilitated by cobalt tetra-aryl porphyrins (Co[TArP]) catalysts stacked on carbon nanotubes (CNTs) that are grown on n-doped silicon substrates. The operational principle of the proposed device is based on conversion of photoelectron energy from sunlight into chemical energy, which at a later point, can be turned into electrical and mechanical power. The proposed device will consist of a degenerately n-doped silicon substrate with Si posts covering the surface of a 4-in. (approximately equal to 10cm) wafer. The substrate will absorb radiation, and electrons will move radially out of Si to CNT. Si posts are designed such that the diameters are small enough to allow considerable numbers of electrons to transport across to the CNT layer. CNTs will be grown on top of Si using conformal catalyst (Fe/Ni) deposition over a thin alumina barrier layer. Both metallic and semiconducting CNT will be used in this investigation, thus allowing for additional charge generation from CNT in the IR region. Si post top surfaces will be masked from catalyst deposition so as to prevent CNT growth on the top surface. A typical unit cell will then consist of a Si post covered with CNT, providing enhanced surface area for the catalyst. The device will then be dipped into a solution of Co[TArP] to enable coating of CNT with Co(P). The Si/CNT/Co [TArP] assembly then will provide electrons for water splitting and hydrogen gas production. A potential of 1.23 V is needed to split water, and near ideal band gap is approximately 1.4 eV. The combination of doped Si/CNT/Co [TArP] will enable this redox reaction to be more efficient.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Michaelos, Thoe K.; Shopov, Dimitar Y.; Sinha, Shashi Bhushan

Here, water-oxidation catalysis is a critical bottleneck in the direct generation of solar fuels by artificial photosynthesis. Catalytic oxidation of difficult substrates such as water requires harsh conditions, so that the ligand must be designed both to stabilize high oxidation states of the metal center and to strenuously resist ligand degradation. Typical ligand choices either lack sufficient electron donor power or fail to stand up to the oxidizing conditions. This research on Ir-based water-oxidation catalysts (WOCs) has led us to identify a ligand, 2-(2'-pyridyl)-2-propanoate or “pyalk” that fulfills these requirements.

Low-Heat-Leak Electrical Leads For Cryogenic Systems

NASA Technical Reports Server (NTRS)

Wise, Stephanie A.; Hooker, Matthew W.

1994-01-01

Electrical leads offering high electrical conductivity and low thermal conductivity developed for use in connecting electronic devices inside cryogenic systems to power supplies, signal-processing circuits, and other circuitry located in nearby warmer surroundings. Strip of superconductive leads on ceramic substrate, similar to ribbon cable, connects infrared detectors at temperature of liquid helium with warmer circuitry. Electrical leads bridging thermal gradient at boundary of cryogenic system designed both to minimize conduction of heat from surroundings through leads into system and to minimize resistive heating caused by electrical currents flowing in leads.

Massively Parallel Optical-to-Electronic Data Transfer

DTIC Science & Technology

1992-07-27

is an angle of 0.43 degrees (0.75 mrad). A TeO2 Bragg cell with an acoustic velocity of 6.16 x 10 cm/sec and a center frequency of 60 Mhz has an...laminated face to face and attached to a glass substrate. As shown in Figure 5-1, the diffracted 632.8 nm power exhibits a true maximum because, unlike the...in Photopolymers An attempt was made to stabilize the geometry of the photopolymer by infiltrating a solution of the photopolymer into a porus glass

Synthesis of graphene nanomaterials and their application in electrochemical energy storage

NASA Astrophysics Data System (ADS)

Xiong, Guoping

The need to store and use energy on diverse scales in a modern technological society necessitates the design of large and small energy systems, among which electrical energy storage systems such as batteries and capacitors have attracted much interest in the past several decades. Supercapacitors, also known as ultracapacitors, or electrochemical capacitors, with fast power delivery and long cycle life are complementing or even replacing batteries in many applications. The rapid development of miniaturized electronic devices has led to a growing need for rechargeable micro-power sources with high performance. Among different sources, electrochemical micro-capacitors or micro-supercapacitors provide higher power density than their counterparts and are gaining increased interest from the research and engineering communities. Rechargeable Li ion batteries with high energy and power density, long cycling life, high charge-discharge rate (1C - 3C) and safe operation are in high demand as power sources and power backup for hybrid electric vehicles and other applications. In the present work, graphene-based graphene materials have been designed and synthesized for electrochemical energy storage applications, e.g., conventional supercapacitors (macro-supercapacitors), microsupercapacitors and lithium ion batteries. Factors influencing the formation and structure of graphitic petals grown by microwave plasma-enhanced chemical vapor deposition on oxidized silicon substrates were investigated through process variation and materials analysis. Insights gained into the growth mechanism of these graphitic petals suggest a simple scribing method can be used to control both the location and formation of petals on flat Si substrates. Transitional metal oxides and conducting polymers have been coated on the graphitic petal-based electrodes by facile chemical methods for multifunctional energy storage applications. Detailed electrochemical characterization (e.g., cyclic voltammetry and constant galvanostatic charge/discharge) has been carried out to evaluate the performance of electrodes.

A low-power CMOS operational amplifier IC for a heterogeneous paper-based potentiostat

NASA Astrophysics Data System (ADS)

Bezuidenhout, P.; Land, K.; Joubert, T.-H.

2016-02-01

Electrochemical biosensing is used to detect specific analytes in fluids, such as bacterial and chemical contaminants. A common implementation of an electrochemical readout is a potentiostat, which usually includes potentiometric, amperometric, and impedimetric detection. Recently several researchers have developed small, low-cost, single-chip silicon-based potentiostats. With the advances in heterogeneous integration technology, low-power potentiostats can be implemented on paper and similar low cost substrates. This paper deals with the design of a low-power paper-based amperometric front-end for a low-cost and rapid detection environment. In amperometric detection a voltage signal is provided to a sensor system, while a small current value generated by an electrochemical redox reaction in the system is measured. In order to measure low current values, the noise of the circuit must be minimized, which is accomplished with a pre-amplification front-end stage, typically designed around an operational amplifier core. An appropriate circuit design for a low-power and low-cost amperometric front-end is identified, taking the heterogeneous integration of various components into account. The operational amplifier core is on a bare custom CMOS chip, which will be integrated onto the paper substrate alongside commercial off-the-shelf electronic components. A general-purpose low-power two-stage CMOS amplifier circuit is designed and simulated for the ams 350 nm 5 V process. After the layout design and verification, the IC was submitted for a multi-project wafer manufacturing run. The simulated results are a bandwidth of 2.4 MHz, a common-mode rejection ratio of 70.04 dB, and power dissipation of 0.154 mW, which are comparable with the analytical values.

Finite element analysis on deformation of stretchable electronic interconnect substrate using polydimethylsiloxanes (PDMS)

NASA Astrophysics Data System (ADS)

Roslan, M. F.; Shaffiar, N. M.; Khairusshima, M. K. N.; Sharifah, I. S. S.

2018-01-01

Over the years, the technology of electronic industry has growth tremendously. Open ended research on how to make a better concept of electronic circuit is ongoing especially on the stretchable electronic devices. There are many designs to achieve stretchability in electronic circuits. The problem occurs when deformation applied to the stretchable electronic circuit, it cannot maintain its functionality. Fracture may happen on the conductor. In this research, the study on deformation of stretchable electronic interconnects substrate using Polydimethlysiloxanes is carried out. The purpose of this research are to study the axial deformation occur, to determine the optimum shape of the conductor designs (horseshoe, rectangular and u-shape design) for the stretchable electronic interconnect and to compare the mechanical properties of Polydimethlysiloxanes (PDMS) with Polyurethane (PU) using Finite Element Analysis (FEA). The simulation was done on the FE model of the stretchable circuit with dimension of 2.4 X 2.4 X 0.5 mm. The stretching of the FE model was simulated with the range of elongation at 10, 20 and 30 percent from its original length in order to find the strain value for all three of the conductor designs. The best conductor design is used to simulate with different types of substrate (PDMS and PU). From the simulation result, Horseshoe design record the lowest strain value for each elongation, followed by rectangular and U-shape design. Thus, Horseshoe is considered as the optimum design for the conductor compared to the other two designs. From the result also, it shows that PDMS substrate will offer more maximum allowable stretchability compared to PU substrates. Thus PDMS is considered as a better substrate compare to PU. PDMS is a good material to replace PU since it can perform under tension much better mechanically.

Epitaxial growth of CoO films on semiconductor and metal substrates by constructing a complex heterostructure

NASA Astrophysics Data System (ADS)

Entani, S.; Kiguchi, M.; Saiki, K.; Koma, A.

2003-01-01

Epitaxial growth of CoO films was studied using reflection high-energy electron diffraction (RHEED), electron energy loss spectroscopy (EELS), ultraviolet photoelectron spectroscopy (UPS) and Auger electron spectroscopy (AES). The RHEED results indicated that an epitaxial CoO film grew on semiconductor and metal substrates (CoO (0 0 1)∥GaAs (0 0 1), Cu (0 0 1), Ag (0 0 1) and [1 0 0]CoO∥[1 0 0] substrates) by constructing a complex heterostructure with two alkali halide buffer layers. The AES, EELS and UPS results showed that the grown CoO film had almost the same electronic structure as bulk CoO. We could show that use of alkali halide buffer layers was a good way to grow metal oxide films on semiconductor and metal substrates in an O 2 atmosphere. The alkali halide layers not only works as glue to connect very dissimilar materials but also prevents oxidation of metal and semiconductor substrates.

AlGaN/GaN high electron mobility transistor grown on GaN template substrate by molecule beam epitaxy system

NASA Astrophysics Data System (ADS)

Tsai, Jenn-Kai; Chen, Y. L.; Gau, M. H.; Pang, W. Y.; Hsu, Y. C.; Lo, Ikai; Hsieh, C. H.

2008-03-01

In this study, AlGaN/GaN high electron mobility transistor (HEMT) structure was grow on GaN template substrate radio frequency plasma assisted molecular beam epitaxy (MBE) equipped with an EPI UNI-Bulb nitrogen plasma source. The undoped GaN template substrate was grown on c-sapphire substrate by metal organic vapor phase epitaxy system (MOPVD). After growth of MOVPE and MBE, the samples are characterized by double crystal X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (SEM), atomic force microscopy (AFM), and Hall effect measurements. We found that the RMS roughness of template substrate play the major role in got the high value of mobility on AlGaN/GaN HEMT. When the roughness was lower than 0.77 nm in a 25 μm x 25 μm area, the mobility of HEMT at the temperature of 77 K was over 10000 cm^2/Vs.

Substrate influence on the interlayer electron-phonon couplings in fullerene films probed with doubly-resonant SFG spectroscopy.

PubMed

Elsenbeck, Dennis; Das, Sushanta K; Velarde, Luis

2017-07-19

We present doubly-resonant sum frequency generation (DR-SFG) spectra of fullerene thin films on metallic and dielectric substrates as a way to investigate the interplay between nuclear and electronic coupling at buried interfaces. Modal and substrate selectivity in the electronic enhancement of the C 60 vibrational signatures is demonstrated for excitation wavelengths spanning the visible range. While the SFG response of the totally symmetric A g (2) mode of fullerene is distinctly coupled to the optically allowed electronic transition corresponding to the HOMO-LUMO+1 of C 60 (ca. 2.6 eV), the T 1u (4) vibrational mode appears to be coupled to a symmetry-forbidden HOMO-LUMO transition at lower energies (ca. 2.0 eV). For dielectric substrates, the DR-SFG intensity of the T 1u (4) mode shows lack of enhancement for upconversion wavelengths off-resonance with the optically-dark LUMO. However, the T 1u (4) mode shows a unique coupling to an intermediate state (∼2.4 eV) only for the fullerene films on the gold substrate. We attribute this coupling to unique interactions at the buried C 60 /gold interface. These results demonstrate the occurrence of clear electron-phonon couplings at the C 60 /substrate interfaces and shed light on the impact of these couplings on the optical response of electronically excited fullerene. This coupling may influence charge and energy transport in organic electronic devices mediated by vibrational motions. We also demonstrate a potential use of this added selectivity in chemical imaging.

High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier

NASA Astrophysics Data System (ADS)

Umezawa, T.; Katshima, K.; Kanno, A.; Akahane, K.; Matsumoto, A.; Yamamoto, N.; Kawanishi, T.

2016-02-01

A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.

Dramatic switching behavior in suspended MoS2 field-effect transistors

NASA Astrophysics Data System (ADS)

Chen, Huawei; Li, Jingyu; Chen, Xiaozhang; Zhang, David; Zhou, Peng

2018-02-01

When integrating MoS2 flakes into scaling-down transistors, the short-channel effect, which is severe in silicon technology below 5-nanometer, can be avoided effectively. MoS2 transistors not only exhibit a high on/off ratio but also demonstrate a rapid switching speed. According to the theoretical calculation, the thermionic limit subthreshold slope (SS) of the ideal device could reach 60 mV/dec. However, due to the confinement of defects from substrates or contamination during the process, the SS deteriorates to more than 300 mV/dec, causing serious power consumption. In this work, we optimize the SS through structure design of MoS2 transistors. The suspended transistors exhibit a high on/off ratio of 107 and a minimum SS of 63 mV/dec with an ultralow standby power at room temperature. This study demonstrates the promising potential of structure design for electronic devices with ultralow-power switching behaviors.

Collection of low-grade waste heat for enhanced energy harvesting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dede, Ercan M., E-mail: eric.dede@tema.toyota.com; Schmalenberg, Paul; Wang, Chi-Ming

Enhanced energy harvesting through the collection of low-grade waste heat is experimentally demonstrated. A structural optimization technique is exploited in the design of a thermal-composite substrate to guide and gather the heat emanating from multiple sources to a predetermined location. A thermoelectric generator is then applied at the selected focusing region to convert the resulting low-grade waste heat to electrical power. The thermal characteristics of the device are experimentally verified by direct temperature measurements of the system and numerically validated via heat conduction simulations. Electrical performance under natural and forced convection is measured, and in both cases, the device withmore » optimized heat flow control plus energy harvesting demonstrates increased power generation when compared with a baseline waste heat recovery system. Electronics applications include energy scavenging for autonomously powered sensor networks or self-actuated devices.« less

Adaption of a microwave plasma source for low temperature diamond deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ulczynski, M.; Reinhard, D.K.; Asmussen, J.

1996-12-31

This report describes the adaption of a microwave plasma reactor for low temperature diamond deposition. The reactor is of a resonant cavity design. Three approaches have been taken to establish plasma conditions for diamond deposition on substrates which are in the range of 450 C to 550 C. In the first, the substrate is heated only by the plasma and the source is operated at pressures on the order of 10 torr, such that the volumetric power density is sufficiently low to achieve these temperatures. In the second, the plasma pressure and microwave input power were reduced and a substratemore » heater was used to maintain the desired deposition temperatures. In the third approach, the plasma pressure and microwave power were increased and a substrate cooler was used to keep the substrate temperature in the desired range. Reactor performance and deposition results will be described for the three configurations. For the plasma heated substrate assembly, substrate dimensions were up to 10 cm diameter. For the heated and cooled substrate assemblies, substrate dimensions were up to 7.5 cm diameter. Deposition results on a variety of substrates will be reported including low-temperature substrates such as borosilicate glass.« less

Appendage mountable electronic devices conformable to surfaces

DOEpatents

Rogers, John; Ying, Ming; Bonifas, Andrew; Lu, Nanshu

2017-01-24

Disclosed are appendage mountable electronic systems and related methods for covering and conforming to an appendage surface. A flexible or stretchable substrate has an inner surface for receiving an appendage, including an appendage having a curved surface, and an opposed outer surface that is accessible to external surfaces. A stretchable or flexible electronic device is supported by the substrate inner and/or outer surface, depending on the application of interest. The electronic device in combination with the substrate provides a net bending stiffness to facilitate conformal contact between the inner surface and a surface of the appendage provided within the enclosure. In an aspect, the system is capable of surface flipping without adversely impacting electronic device functionality, such as electronic devices comprising arrays of sensors, actuators, or both sensors and actuators.

Characteristics of Various Photodiode Structures in CMOS Technology with Monolithic Signal Processing Electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mukhopadhyay, Sourav; Chandratre, V. B.; Sukhwani, Menka

2011-10-20

Monolithic optical sensor with readout electronics are needed in optical communication, medical imaging and scintillator based gamma spectroscopy system. This paper presents the design of three different CMOS photodiode test structures and two readout channels in a commercial CMOS technology catering to the need of nuclear instrumentation. The three photodiode structures each of 1 mm{sup 2} with readout electronics are fabricated in 0.35 um, 4 metal, double poly, N-well CMOS process. These photodiode structures are based on available P-N junction of standard CMOS process i.e. N-well/P-substrate, P+/N-well/P-substrate and inter-digitized P+/N-well/P-substrate. The comparisons of typical characteristics among three fabricated photo sensorsmore » are reported in terms of spectral sensitivity, dark current and junction capacitance. Among the three photodiode structures N-well/P-substrate photodiode shows higher spectral sensitivity compared to the other two photodiode structures. The inter-digitized P+/N-well/P-substrate structure has enhanced blue response compared to N-well/P-substrate and P+/N-well/P-substrate photodiode. Design and test results of monolithic readout electronics, for three different CMOS photodiode structures for application related to nuclear instrumentation, are also reported.« less

Method and apparatus for improved high power impulse magnetron sputtering

DOEpatents

Anders, Andre

2013-11-05

A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

Method for integrating microelectromechanical devices with electronic circuitry

DOEpatents

Montague, Stephen; Smith, James H.; Sniegowski, Jeffry J.; McWhorter, Paul J.

1998-01-01

A method for integrating one or more microelectromechanical (MEM) devices with electronic circuitry. The method comprises the steps of forming each MEM device within a cavity below a device surface of the substrate; encapsulating the MEM device prior to forming electronic circuitry on the substrate; and releasing the MEM device for operation after fabrication of the electronic circuitry. Planarization of the encapsulated MEM device prior to formation of the electronic circuitry allows the use of standard processing steps for fabrication of the electronic circuitry.

Microautoradiographic study of Rhodocyclus-related polyphosphate-accumulating bacteria in full-scale enhanced biological phosphorus removal plants.

PubMed

Kong, Yunhong; Nielsen, Jeppe Lund; Nielsen, Per Halkjaer

2004-09-01

The ecophysiology of uncultured Rhodocyclus-related polyphosphate-accumulating organisms (PAO) present in three full-scale enhanced biological phosphorus removal (EBPR) activated sludge plants was studied by using microautoradiography combined with fluorescence in situ hybridization. The investigations showed that these organisms were present in all plants examined and constituted 5 to 10, 10 to 15, and 17 to 22% of the community biomass. The behavior of these bacteria generally was consistent with the biochemical models proposed for PAO, based on studies of lab-scale investigations of enriched and often unknown PAO cultures. Rhodocyclus-related PAO were able to accumulate short-chain substrates, including acetate, propionate, and pyruvate, under anaerobic conditions, but they could not assimilate many other low-molecular-weight compounds, such as ethanol and butyrate. They were able to assimilate two substrates (e.g., acetate and propionate) simultaneously. Leucine and thymidine could not be assimilated as sole substrates and could only be assimilated as cosubstrates with acetate, perhaps serving as N sources. Glucose could not be assimilated by the Rhodocyclus-related PAO, but it was easily fermented in the sludge to products that were subsequently consumed. Glycolysis, and not the tricarboxylic acid cycle, was the source that provided the reducing power needed by the Rhodocyclus-related PAO to form the intracellular polyhydroxyalkanoate storage compounds during anaerobic substrate assimilation. The Rhodocyclus-related PAO were able to take up orthophosphate and accumulate polyphosphate when oxygen, nitrate, or nitrite was present as an electron acceptor. Furthermore, in the presence of acetate growth was sustained by using oxygen, as well as nitrate or nitrite, as an electron acceptor. This strongly indicates that Rhodocyclus-related PAO were able to denitrify and thus played a role in the denitrification occurring in full-scale EBPR plants.

The use of low resistivity substrates for optimal noise reduction, ground referencing, and current conduction in mixed signal ASICs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zimmerman, T.

1997-12-01

This paper is distilled from a talk given at the 3rd International Meeting on Front End Electronics in Taos, N.M. on Nov. 7,1997. It is based on experience gained by designing and testing the SVX3 128 channel silicon strip detector readout chip. The SVX3 chip organization is shown in Fig. 1. The Front End section consists of an integrator and analog pipeline designed at Fermilab, and the Back End section is an ADC plus sparsification and readout logic designed at LBL. SVX3 is a deadtimeless readout chip, which means that the front end is acquiring low level analog signals whilemore » the back end is digitizing and reading out digital signals. It is thus a true mixed signal chip, and demands close attention to avoid disastrous coupling from the digital to the analog sections. SVX3 is designed in a bulk CMOS process (i.e., the circuits sit in a silicon substrate). In such a process, the substrate becomes a potential coupling path. This paper discusses the effect of the substrate resistivity on coupling, and also goes into a more general discussion of grounding and referencing in mixed signal designs and how low resistivity substrates can be used to advantage. Finally, an alternative power supply current conduction method for ASICs is presented as an additional advantage which can be obtained with low resistivity substrates. 1 ref., 13 figs., 1 tab.« less

Electron Beam "Writes" Silicon On Sapphire

NASA Technical Reports Server (NTRS)

Heinemann, Klaus

1988-01-01

Method of growing silicon on sapphire substrate uses beam of electrons to aid growth of semiconductor material. Silicon forms as epitaxial film in precisely localized areas in micron-wide lines. Promising fabrication method for fast, densely-packed integrated circuits. Silicon deposited preferentially in contaminated substrate zones and in clean zone irradiated by electron beam. Electron beam, like surface contamination, appears to stimulate decomposition of silane atmosphere.

Electricity generation and wastewater treatment of oil refinery in microbial fuel cells using Pseudomonas putida.

PubMed

Majumder, Dip; Maity, Jyoti Prakash; Tseng, Min-Jen; Nimje, Vanita Roshan; Chen, Hau-Ren; Chen, Chien-Cheng; Chang, Young-Fo; Yang, Tsui-Chu; Chen, Chen-Yen

2014-09-22

Microbial fuel cells (MFCs) represent a novel platform for treating wastewater and at the same time generating electricity. Using Pseudomonas putida (BCRC 1059), a wild-type bacterium, we demonstrated that the refinery wastewater could be treated and also generate electric current in an air-cathode chamber over four-batch cycles for 63 cumulative days. Our study indicated that the oil refinery wastewater containing 2213 mg/L (ppm) chemical oxygen demand (COD) could be used as a substrate for electricity generation in the reactor of the MFC. A maximum voltage of 355 mV was obtained with the highest power density of 0.005 mW/cm² in the third cycle with a maximum current density of 0.015 mA/cm² in regard to the external resistor of 1000 Ω. A maximum coulombic efficiency of 6 × 10⁻²% was obtained in the fourth cycle. The removal efficiency of the COD reached 30% as a function of time. Electron transfer mechanism was studied using cyclic voltammetry, which indicated the presence of a soluble electron shuttle in the reactor. Our study demonstrated that oil refinery wastewater could be used as a substrate for electricity generation.

Electricity Generation and Wastewater Treatment of Oil Refinery in Microbial Fuel Cells Using Pseudomonas putida

PubMed Central

Majumder, Dip; Maity, Jyoti Prakash; Tseng, Min-Jen; Nimje, Vanita Roshan; Chen, Hau-Ren; Chen, Chien-Cheng; Chang, Young-Fo; Yang, Tsui-Chu; Chen, Chen-Yen

2014-01-01

Microbial fuel cells (MFCs) represent a novel platform for treating wastewater and at the same time generating electricity. Using Pseudomonas putida (BCRC 1059), a wild-type bacterium, we demonstrated that the refinery wastewater could be treated and also generate electric current in an air-cathode chamber over four-batch cycles for 63 cumulative days. Our study indicated that the oil refinery wastewater containing 2213 mg/L (ppm) chemical oxygen demand (COD) could be used as a substrate for electricity generation in the reactor of the MFC. A maximum voltage of 355 mV was obtained with the highest power density of 0.005 mW/cm2 in the third cycle with a maximum current density of 0.015 mA/cm2 in regard to the external resistor of 1000 Ω. A maximum coulombic efficiency of 6 × 10−2% was obtained in the fourth cycle. The removal efficiency of the COD reached 30% as a function of time. Electron transfer mechanism was studied using cyclic voltammetry, which indicated the presence of a soluble electron shuttle in the reactor. Our study demonstrated that oil refinery wastewater could be used as a substrate for electricity generation. PMID:25247576

Surface-structured bacterial cellulose with guided assembly-based biolithography (GAB).

PubMed

Bottan, Simone; Robotti, Francesco; Jayathissa, Prageeth; Hegglin, Alicia; Bahamonde, Nicolas; Heredia-Guerrero, José A; Bayer, Ilker S; Scarpellini, Alice; Merker, Hannes; Lindenblatt, Nicole; Poulikakos, Dimos; Ferrari, Aldo

2015-01-27

A powerful replica molding methodology to transfer on-demand functional topographies to the surface of bacterial cellulose nanofiber textures is presented. With this method, termed guided assembly-based biolithography (GAB), a surface-structured polydimethylsiloxane (PDMS) mold is introduced at the gas-liquid interface of an Acetobacter xylinum culture. Upon bacterial fermentation, the generated bacterial cellulose nanofibers are assembled in a three-dimensional network reproducing the geometric shape imposed by the mold. Additionally, GAB yields directional alignment of individual nanofibers and memory of the transferred geometrical features upon dehydration and rehydration of the substrates. Scanning electron and atomic force microscopy are used to establish the good fidelity of this facile and affordable method. Interaction of surface-structured bacterial cellulose substrates with human fibroblasts and keratinocytes illustrates the efficient control of cellular activities which are fundamental in skin wound healing and tissue regeneration. The deployment of surface-structured bacterial cellulose substrates in model animals as skin wound dressing or body implant further proves the high durability and low inflammatory response to the material over a period of 21 days, demonstrating beneficial effects of surface structure on skin regeneration.

Rapid Growth of Nanostructured Diamond Film on Silicon and Ti–6Al–4V Alloy Substrates

PubMed Central

Samudrala, Gopi K.; Vohra, Yogesh K.; Walock, Michael J.; Miles, Robin

2014-01-01

Nanostructured diamond (NSD) films were grown on silicon and Ti–6Al–4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 μm/h on silicon, and 4 μm/h on Ti–6Al–4V were achieved. In a chemistry of H2/CH4/N2, varying ratios of CH4/H2 and N2/CH4 were employed in this research and their effect on the resulting diamond films were studied by X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. As a result of modifying the stock cooling stage of CVD system, we were able to utilize plasma with high power densities in our NSD growth experiments, enabling us to achieve high growth rates. Substrate temperature and N2/CH4 ratio have been found to be key factors in determining the diamond film quality. NSD films grown as part of this study were shown to contain 85% to 90% sp3 bonded carbon. PMID:28788461

Electromagnetic interference filter for automotive electrical systems

DOEpatents

Herron, Nicholas Hayden; Carlson, Douglas S; Tang, David; Korich, Mark D

2013-07-02

A filter for an automotive electrical system includes a substrate having first and second conductive members. First and second input terminals are mounted to the substrate. The first input terminal is electrically connected to the first conductive member, and the second input terminal is electrically connected to the second conductive member. A plurality of capacitors are mounted to the substrate. Each of the capacitors is electrically connected to at least one of the first and second conductive members. First and second power connectors are mounted to the substrate. The first power connector is electrically connected to the first conductive member, and the second power connector is electrically connected to the second conductive member. A common mode choke is coupled to the substrate and arranged such that the common mode choke extends around at least a portion of the substrate and the first and second conductive members.

Catalyst free growth of CNTs by CVD on nanoscale rough surfaces of silicon substrates

NASA Astrophysics Data System (ADS)

Damodar, D.; Sahoo, R. K.; Jacob, C.

2013-06-01

Catalyst free growth of carbon nanotubes (CNT) has been achieved using atmospheric pressure chemical vapor deposition (APCVD) on surface modified Si(111) substrates. The effect of the substrate surface has been observed by partially etching with KOH (potassium hydroxide) solution which is an anisotropic etchant. Scanning electron microscopy (SEM) confirmed the formation of CNTs over most of the area of the substrate where substrates were anisotropically etched. Transmission electron microscopy (TEM) was used to observe the internal structure of the CNTs. Raman spectroscopy further confirmed the formation of the carbon nanostructures and also their graphitic crystallinity.

Material growth and characterization for solid state devices

NASA Technical Reports Server (NTRS)

Stefanakos, E. K.; Collis, W. J.; Abul-Fadl, A.; Iyer, S.

1984-01-01

During the reporting period, InGaAs was grown on Fe-doped (semi-insulating) (100) InP substrates by current controlled liquid phase epitaxy (CCLPE) at 640 C and current densities of 2.5A sq/cm to 5 A/sq cm for periods from 5 to 30 minutes. Special efforts were made to reduce the background carrier concentration in the grown layers as much as possible. The best layers exhibited carrier concentrations in the mid-10 to the 15th power/cu cm range and up to 10,900 sq cm/V-sec room temperature mobility. InGaAsP quaternary layers of energy gap corresponding to wavelengths of approximately 1.5 microns and 1.3 microns were grown on (100) InP substrates by CCLPE. In the device fabrication area, work was directed toward processing MISFET's using InGaAs. SiO2, Si3N4 and Al2O3 were deposited by ion beam sputtering, electron beam evaporation and chemical vapor reaction on Si, GaAs, and InGaAs substrates. SiO2 and Si3N4 sputtered layers were found to possess a high density of pinhole defects that precluded capacitance-voltage analysis. Chemical vapor deposited Al2O3 layers on Si, GaAs and InGaAs substrates also exhibited a large number of pinhole defects. This prevented achieving good MIS devices over most of the substrate surface area.

Method for integrating microelectromechanical devices with electronic circuitry

DOEpatents

Barron, Carole C.; Fleming, James G.; Montague, Stephen

1999-01-01

A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry on a common substrate. The MEM device can be fabricated within a substrate cavity and encapsulated with a sacrificial material. This allows the MEM device to be annealed and the substrate planarized prior to forming electronic circuitry on the substrate using a series of standard processing steps. After fabrication of the electronic circuitry, the electronic circuitry can be protected by a two-ply protection layer of titanium nitride (TiN) and tungsten (W) during an etch release process whereby the MEM device is released for operation by etching away a portion of a sacrificial material (e.g. silicon dioxide or a silicate glass) that encapsulates the MEM device. The etch release process is preferably performed using a mixture of hydrofluoric acid (HF) and hydrochloric acid (HCI) which reduces the time for releasing the MEM device compared to use of a buffered oxide etchant. After release of the MEM device, the TiN:W protection layer can be removed with a peroxide-based etchant without damaging the electronic circuitry.

Engineering of Porphyrin Molecules for Use as Effective Cathode Interfacial Modifiers in Organic Solar Cells of Enhanced Efficiency and Stability.

PubMed

Tountas, Marinos; Verykios, Apostolis; Polydorou, Ermioni; Kaltzoglou, Andreas; Soultati, Anastasia; Balis, Nikolaos; Angaridis, Panagiotis A; Papadakis, Michael; Nikolaou, Vasilis; Auras, Florian; Palilis, Leonidas C; Tsikritzis, Dimitris; Evangelou, Evangelos K; Gardelis, Spyros; Koutsoureli, Matroni; Papaioannou, George; Petsalakis, Ioannis D; Kennou, Stella; Davazoglou, Dimitris; Argitis, Panagiotis; Falaras, Polycarpos; Coutsolelos, Athanassios G; Vasilopoulou, Maria

2018-06-20

In the present work, we effectively modify the TiO 2 electron transport layer of organic solar cells with an inverted architecture using appropriately engineered porphyrin molecules. The results show that the optimized porphyrin modifier bearing two carboxylic acids as the anchoring groups and a triazine electron-withdrawing spacer significantly reduces the work function of TiO 2 , thereby reducing the electron extraction barrier. Moreover, the lower surface energy of the porphyrin-modified substrate results in better physical compatibility between the latter and the photoactive blend. Upon employing porphyrin-modified TiO 2 electron transport layers in PTB7:PC 71 BM-based organic solar cells we obtained an improved average power conversion efficiency up to 8.73%. Importantly, porphyrin modification significantly increased the lifetime of the devices, which retained 80% of their initial efficiency after 500 h of storage in the dark. Because of its simplicity and efficacy, this approach should give tantalizing glimpses and generate an impact into the potential of porphyrins to facilitate electron transfer in organic solar cells and related devices.

Bolometer detection of magnetic resonances in nanoscaled objects

NASA Astrophysics Data System (ADS)

Rod, Irina; Meckenstock, Ralf; Zähres, Horst; Derricks, Christian; Mushenok, Fedor; Reckers, Nathalie; Kijamnajsuk, Puchong; Wiedwald, Ulf; Farle, Michael

2014-10-01

We report on a nanoscaled thermocouple (ThC) as a temperature sensor of a highly sensitive bolometer for probing the dissipative damping of spin dynamics in nanosized Permalloy (Py) stripes. The Au-Pd ThC based device is fabricated by standard electron beam lithography on a 200 nm silicon nitride membrane to minimize heat dissipation through the substrate. We show that this thermal sensor allows not only measurements of the temperature change on the order of a few mK due to the uniform resonant microwave (MW) absorption by the Py stripe but also detection of standing spin waves of different mode numbers. Using a 3D finite element method, we estimate the absorbed MW power by the stripe in resonance and prove the necessity of using substrates with an extremely low heat dissipation like a silicon nitride membrane for successful thermal detection. The voltage responsivity and the noise equivalent power for the ThC-based bolometer are equal to 15 V W-1 and 3 nW Hz-1/2, respectively. The ThC device offers a magnetic resonance response of 1 nV/(μB W) corresponding to a sensitivity of 109 spins and a temperature resolution of 300 μK under vacuum conditions.

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

PubMed Central

Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

2015-01-01

High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This “compliant” buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 105 cm−2. In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6” wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors. PMID:26329829

Ultra-slim flexible glass for roll-to-roll electronic device fabrication

NASA Astrophysics Data System (ADS)

Garner, Sean; Glaesemann, Scott; Li, Xinghua

2014-08-01

As displays and electronics evolve to become lighter, thinner, and more flexible, the choice of substrate continues to be critical to their overall optimization. The substrate directly affects improvements in the designs, materials, fabrication processes, and performance of advanced electronics. With their inherent benefits such as surface quality, optical transmission, hermeticity, and thermal and dimensional stability, glass substrates enable high-quality and long-life devices. As substrate thicknesses are reduced below 200 μm, ultra-slim flexible glass continues to provide these inherent benefits to high-performance flexible electronics such as displays, touch sensors, photovoltaics, and lighting. In addition, the reduction in glass thickness also allows for new device designs and high-throughput, continuous manufacturing enabled by R2R processes. This paper provides an overview of ultra-slim flexible glass substrates and how they enable flexible electronic device optimization. Specific focus is put on flexible glass' mechanical reliability. For this, a combination of substrate design and process optimizations has been demonstrated that enables R2R device fabrication on flexible glass. Demonstrations of R2R flexible glass processes such as vacuum deposition, photolithography, laser patterning, screen printing, slot die coating, and lamination have been made. Compatibility with these key process steps has resulted in the first demonstration of a fully functional flexible glass device fabricated completely using R2R processes.

Refining the reaction mechanism of O2 towards its co-substrate in cofactor-free dioxygenases

PubMed Central

2016-01-01

Cofactor-less oxygenases perform challenging catalytic reactions between singlet co-substrates and triplet oxygen, in spite of apparently violating the spin-conservation rule. In 1-H-3-hydroxy-4-oxoquinaldine-2,4-dioxygenase, the active site has been suggested by quantum chemical computations to fine tune triplet oxygen reactivity, allowing it to interact rapidly with its singlet substrate without the need for spin inversion, and in urate oxidase the reaction is thought to proceed through electron transfer from the deprotonated substrate to an aminoacid sidechain, which then feeds the electron to the oxygen molecule. In this work, we perform additional quantum chemical computations on these two systems to elucidate several intriguing features unaddressed by previous workers. These computations establish that in both enzymes the reaction proceeds through direct electron transfer from co-substrate to O2 followed by radical recombination, instead of minimum-energy crossing points between singlet and triplet potential energy surfaces without formal electron transfer. The active site does not affect the reactivity of oxygen directly but is crucial for the generation of the deprotonated form of the co-substrates, which have redox potentials far below those of their protonated forms and therefore may transfer electrons to oxygen without sizeable thermodynamic barriers. This mechanism seems to be shared by most cofactor-less oxidases studied so far. PMID:28028471

Refining the reaction mechanism of O2 towards its co-substrate in cofactor-free dioxygenases.

PubMed

Silva, Pedro J

2016-01-01

Cofactor-less oxygenases perform challenging catalytic reactions between singlet co-substrates and triplet oxygen, in spite of apparently violating the spin-conservation rule. In 1- H -3-hydroxy-4-oxoquinaldine-2,4-dioxygenase, the active site has been suggested by quantum chemical computations to fine tune triplet oxygen reactivity, allowing it to interact rapidly with its singlet substrate without the need for spin inversion, and in urate oxidase the reaction is thought to proceed through electron transfer from the deprotonated substrate to an aminoacid sidechain, which then feeds the electron to the oxygen molecule. In this work, we perform additional quantum chemical computations on these two systems to elucidate several intriguing features unaddressed by previous workers. These computations establish that in both enzymes the reaction proceeds through direct electron transfer from co-substrate to O 2 followed by radical recombination, instead of minimum-energy crossing points between singlet and triplet potential energy surfaces without formal electron transfer. The active site does not affect the reactivity of oxygen directly but is crucial for the generation of the deprotonated form of the co-substrates, which have redox potentials far below those of their protonated forms and therefore may transfer electrons to oxygen without sizeable thermodynamic barriers. This mechanism seems to be shared by most cofactor-less oxidases studied so far.

Nernst-ping-pong model for evaluating the effects of the substrate concentration and anode potential on the kinetic characteristics of bioanode.

PubMed

Peng, Sikan; Liang, Da-Wei; Diao, Peng; Liu, Yanyan; Lan, Fei; Yang, Yuhan; Lu, Shanfu; Xiang, Yan

2013-05-01

Understanding the electron-transfer mechanism and kinetic characteristics of bioanodes is greatly significant to enhance the electron-generating efficiencies in bioelectrochemical systems (BESs). A Nernst-ping-pong model is proposed here to investigate the kinetics and biochemical processes of bioanodes in a microbial electrolysis cell. This model can accurately describe the effects of the substrate (including substrate inhibition) and the anode potential on the current of bioanodes. Results show that the half-wave potential positively shifts as the substrate concentration increases, indicating that the rate-determining steps of anodic processes change from substrate oxidation to intracellular electron transport reaction. The anode potential has negligible effects on the enzymatic catalysis of anodic microbes in the range of -0.25 V to +0.1 V vs. a saturated calomel electrode. It turns out that to reduce the anodic energy loss caused by overpotential, higher substrate concentrations are preferred, if the substrate do not significantly and adversely affect the output current. Copyright © 2013 Elsevier Ltd. All rights reserved.

Geant4 calculations for space radiation shielding material Al2O3

NASA Astrophysics Data System (ADS)

Capali, Veli; Acar Yesil, Tolga; Kaya, Gokhan; Kaplan, Abdullah; Yavuz, Mustafa; Tilki, Tahir

2015-07-01

Aluminium Oxide, Al2O3 is the most widely used material in the engineering applications. It is significant aluminium metal, because of its hardness and as a refractory material owing to its high melting point. This material has several engineering applications in diverse fields such as, ballistic armour systems, wear components, electrical and electronic substrates, automotive parts, components for electric industry and aero-engine. As well, it is used as a dosimeter for radiation protection and therapy applications for its optically stimulated luminescence properties. In this study, stopping powers and penetrating distances have been calculated for the alpha, proton, electron and gamma particles in space radiation shielding material Al2O3 for incident energies 1 keV - 1 GeV using GEANT4 calculation code.

Galvanic displacement assembly of ultrathin Co3O4 nanosheet arrays on nickel foam for a high-performance supercapacitor

NASA Astrophysics Data System (ADS)

You, Yuxiu; Zheng, Maojun; Ma, Liguo; Yuan, Xiaoliang; Zhang, Bin; Li, Qiang; Wang, Faze; Song, Jingnan; Jiang, Dongkai; Liu, Pengjie; Ma, Li; Shen, Wenzhong

2017-03-01

High-performance supercapacitors are very desirable for many portable electronic devices, electric vehicles and high-power electronic devices. Herein, a facile and binder-free synthesis method, galvanic displacement of the precursor followed by heat treatment, is used to fabricate ultrathin Co3O4 nanosheet arrays on nickel foam substrate. When used as a supercapacitor electrode the prepared Co3O4 on nickel foam exhibits a maximum specific capacitance of 1095 F g-1 at a current density of 1 A g-1 and good cycling stability of 71% retention after 2000 cycling tests. This excellent electrochemical performance can be ascribed to the high specific surface area of each Co3O4 nanosheet that comprises numerous nanoparticles.

Electron-beam lithography for micro and nano-optical applications

NASA Technical Reports Server (NTRS)

Wilson, Daniel W.; Muller, Richard E.; Echternach, Pierre M.

2005-01-01

Direct-write electron-beam lithography has proven to be a powerful technique for fabricating a variety of micro- and nano-optical devices. Binary E-beam lithography is the workhorse technique for fabricating optical devices that require complicated precision nano-scale features. We describe a bi-layer resist system and virtual-mark height measurement for improving the reliability of fabricating binary patterns. Analog E-beam lithography is a newer technique that has found significant application in the fabrication of diffractive optical elements. We describe our techniques for fabricating analog surface-relief profiles in E-beam resist, including some discussion regarding overcoming the problems of resist heating and charging. We also describe a multiple-field-size exposure scheme for suppression of field-stitch induced ghost diffraction orders produced by blazed diffraction gratings on non-flat substrates.

Density gradient free electron collisionally excited X-ray laser

DOEpatents

Campbell, Edward M.; Rosen, Mordecai D.

1989-01-01

An operational X-ray laser (30) is provided that amplifies 3p-3s transition X-ray radiation along an approximately linear path. The X-ray laser (30) is driven by a high power optical laser. The driving line focused optical laser beam (32) illuminates a free-standing thin foil (34) that may be associated with a substrate (36) for improved structural integrity. This illumination produces a generally cylindrically shaped plasma having an essentially uniform electron density and temperature, that exists over a long period of time, and provides the X-ray laser gain medium. The X-ray laser (30) may be driven by more than one optical laser beam (32, 44). The X-ray laser (30) has been successfully demonstrated to function in a series of experimental tests.

Inkjet-/3D-/4D-printed autonomous wearable RF modules for biomonitoring, positioning and sensing applications

NASA Astrophysics Data System (ADS)

Bito, Jo; Bahr, Ryan; Hester, Jimmy; Kimionis, John; Nauroze, Abdullah; Su, Wenjing; Tehrani, Bijan; Tentzeris, Manos M.

2017-05-01

In this paper, numerous inkjet-/3D-/4D-printed wearable flexible antennas, RF electronics, modules and sensors fabricated on paper and other polymer (e.g. LCP) substrates are introduced as a system-level solution for ultra-low-cost mass production of autonomous Biomonitoring, Positioning and Sensing applications. This paper briefly discusses the state-of-the-art area of fully-integrated wearable wireless sensor modules on paper or flexible LCP and show the first ever 4D sensor module integration on paper, as well as numerous 3D and 4D multilayer paper-based and LCP-based RF/microwave, flexible and wearable structures, that could potentially set the foundation for the truly convergent wireless sensor ad-hoc "on-body networks of the future with enhanced cognitive intelligence and "rugged" packaging. Also, some challenges concerning the power sources of "nearperpetual" wearable RF modules, including flexible miniaturized batteries as well as power-scavenging approaches involving electromagnetic and solar energy forms are discuessed. The final step of the paper will involve examples from mmW wearable (e.g. biomonitoring) antennas and RF modules, as well as the first examples of the integration of inkjet-printed nanotechnology-based (e.g.CNT) sensors on paper and organic substrates for Internet of Things (IoT) applications. It has to be noted that the paper will review and present challenges for inkjetprinted organic active and nonlinear devices as well as future directions in the area of environmentally-friendly "green") wearable RF electronics and "smart-skin conformal sensors.

Influence of the Raman laser power on the opto-electronics properties in graphene with water molecule

NASA Astrophysics Data System (ADS)

Rey-GonzáLez, R. R.; Champi, A.; Rojas Cuervo, A. M.

The study of physical and chemical properties of nanostructures has contributed in great part with advance of the nanotechnology, which is important for the development of present and future technological applications. An important key in this purpose is the interaction of atoms and molecules with nanostructures. The principal interest of this experimental work is to study these processes on the interaction between liquid and vapor phases water with a graphene bilayer which is obtained through micromechanical exfoliation technique from a sample of natural graphite deposited on a SiO2 substrate. The number of layers and the interaction water-bilayer are analyzed systematically by means of Raman spectroscopy λ = 532nm). Also, the influence of variation of the Raman laser power and its effects in the opto-electronic properties of the system are studied. From the usual G, D and 2D bands of these spectra, we analyze the relation between the laser power and some band parameters, such as its area, position and wide. Finally, these results permit us to quantify the density of defects and the distance among them as function of Raman power before and after of the water vapor incorporation in bilayers Authors would like to thank the Programa Latino Americano de Física of Sociedade Brasileira de Física for their financial support. A. M. Rojas-Cuervo would also like to thank the Colciencias, Colombia.

Indirect X-ray Detectors Based on Inkjet-Printed Photodetectors with a Screen-Printed Scintillator Layer.

PubMed

Oliveira, Juliana; Correia, Vitor; Sowade, Enrico; Etxebarria, Ikerne; Rodriguez, Raul D; Mitra, Kalyan Y; Baumann, Reinhard R; Lanceros-Mendez, Senentxu

2018-04-18

Organic photodetectors (PDs) based on printing technologies will allow to expand the current field of PD applications toward large-area and flexible applications in areas such as medical imaging, security, and quality control, among others. Inkjet printing is a powerful digital tool for the deposition of smart and functional materials on various substrates, allowing the development of electronic devices such as PDs on various substrates. In this work, inkjet-printed PD arrays, based on the organic thin-film transistor architecture, have been developed and applied for the indirect detection of X-ray radiation using a scintillator ink as an X-ray absorber. The >90% increase of the photocurrent of the PDs under X-ray radiation, from about 53 nA without the scintillator film to about 102 nA with the scintillator located on top of the PD, proves the suitability of the developed printed device for X-ray detection applications.

Thermal conductance of Nb thin films at sub-kelvin temperatures.

PubMed

Feshchenko, A V; Saira, O-P; Peltonen, J T; Pekola, J P

2017-02-03

We determine the thermal conductance of thin niobium (Nb) wires on a silica substrate in the temperature range of 0.1-0.6 K using electron thermometry based on normal metal-insulator-superconductor tunnel junctions. We find that at 0.6 K, the thermal conductance of Nb is two orders of magnitude lower than that of Al in the superconducting state, and two orders of magnitude below the Wiedemann-Franz conductance calculated with the normal state resistance of the wire. The measured thermal conductance exceeds the prediction of the Bardeen-Cooper-Schrieffer theory, and demonstrates a power law dependence on temperature as T 4.5 , instead of an exponential one. At the same time, we monitor the temperature profile of the substrate along the Nb wire to observe possible overheating of the phonon bath. We show that Nb can be successfully used for thermal insulation in a nanoscale circuit while simultaneously providing an electrical connection.

Thermal conductance of Nb thin films at sub-kelvin temperatures

NASA Astrophysics Data System (ADS)

Feshchenko, A. V.; Saira, O.-P.; Peltonen, J. T.; Pekola, J. P.

2017-02-01

We determine the thermal conductance of thin niobium (Nb) wires on a silica substrate in the temperature range of 0.1-0.6 K using electron thermometry based on normal metal-insulator-superconductor tunnel junctions. We find that at 0.6 K, the thermal conductance of Nb is two orders of magnitude lower than that of Al in the superconducting state, and two orders of magnitude below the Wiedemann-Franz conductance calculated with the normal state resistance of the wire. The measured thermal conductance exceeds the prediction of the Bardeen-Cooper-Schrieffer theory, and demonstrates a power law dependence on temperature as T4.5, instead of an exponential one. At the same time, we monitor the temperature profile of the substrate along the Nb wire to observe possible overheating of the phonon bath. We show that Nb can be successfully used for thermal insulation in a nanoscale circuit while simultaneously providing an electrical connection.

Self-assembled single-crystal silicon circuits on plastic

PubMed Central

Stauth, Sean A.; Parviz, Babak A.

2006-01-01

We demonstrate the use of self-assembly for the integration of freestanding micrometer-scale components, including single-crystal, silicon field-effect transistors (FETs) and diffusion resistors, onto flexible plastic substrates. Preferential self-assembly of multiple microcomponent types onto a common platform is achieved through complementary shape recognition and aided by capillary, fluidic, and gravitational forces. We outline a microfabrication process that yields single-crystal, silicon FETs in a freestanding, powder-like collection for use with self-assembly. Demonstrations of self-assembled FETs on plastic include logic inverters and measured electron mobility of 592 cm2/V-s. Finally, we extend the self-assembly process to substrates each containing 10,000 binding sites and realize 97% self-assembly yield within 25 min for 100-μm-sized elements. High-yield self-assembly of micrometer-scale functional devices as outlined here provides a powerful approach for production of macroelectronic systems. PMID:16968780

Large-Area All-Textile Pressure Sensors for Monitoring Human Motion and Physiological Signals.

PubMed

Liu, Mengmeng; Pu, Xiong; Jiang, Chunyan; Liu, Ting; Huang, Xin; Chen, Libo; Du, Chunhua; Sun, Jiangman; Hu, Weiguo; Wang, Zhong Lin

2017-11-01

Wearable pressure sensors, which can perceive and respond to environmental stimuli, are essential components of smart textiles. Here, large-area all-textile-based pressure-sensor arrays are successfully realized on common fabric substrates. The textile sensor unit achieves high sensitivity (14.4 kPa -1 ), low detection limit (2 Pa), fast response (≈24 ms), low power consumption (<6 µW), and mechanical stability under harsh deformations. Thanks to these merits, the textile sensor is demonstrated to be able to recognize finger movement, hand gestures, acoustic vibrations, and real-time pulse wave. Furthermore, large-area sensor arrays are successfully fabricated on one textile substrate to spatially map tactile stimuli and can be directly incorporated into a fabric garment for stylish designs without sacrifice of comfort, suggesting great potential in smart textiles or wearable electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Performance and Reliability of Bonded Interfaces for High-Temperature Packaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paret, Paul P

2017-08-02

Sintered silver has proven to be a promising candidate for use as a die-attach and substrate-attach material in automotive power electronics components. It holds promise of greater reliability than lead-based and lead-free solders, especially at higher temperatures (>200 degrees C). Accurate predictive lifetime models of sintered silver need to be developed and its failure mechanisms thoroughly characterized before it can be deployed as a die-attach or substrate-attach material in wide-bandgap device-based packages. Mechanical characterization tests that result in stress-strain curves and accelerated tests that produce cycles-to-failure result will be conducted. Also, we present a finite element method (FEM) modeling methodologymore » that can offer greater accuracy in predicting the failure of sintered silver under accelerated thermal cycling. A fracture mechanics-based approach is adopted in the FEM model, and J-integral/thermal cycle values are computed.« less

Silver Nanowire Top Electrodes in Flexible Perovskite Solar Cells using Titanium Metal as Substrate.

PubMed

Lee, Minoh; Ko, Yohan; Min, Byoung Koun; Jun, Yongseok

2016-01-08

Flexible perovskite solar cells (FPSCs) have various applications such as wearable electronic textiles and portable devices. In this work, we demonstrate FPSCs on a titanium metal substrate employing solution-processed silver nanowires (Ag NWs) as the top electrode. The Ag NW electrodes were deposited on top of the spiro-MeOTAD hole transport layer by a carefully controlled spray-coating method at moderate temperatures. The power conversion efficiency (PCE) reached 7.45 % under AM 1.5 100 mW cm(-2) illumination. Moreover, the efficiency for titanium-based FPSCs decreased only slightly (by 2.6 % of the initial value) after the devices were bent 100 times. With this and other advances, fully solution-based indium-free flexible photovoltaics, advantageous in terms of price and processing, have the potential to be scaled into commercial production. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cathodes for secondary electrochemical power-producing cells. [layers of porous substrates impregnated with S alternate with layers containing electrolyte

DOEpatents

Cairns, E.J.; Kyle, M.; Shimotake, H.

1973-02-13

A secondary electrochemical power-producing cell includes an anode containing lithium, an electrolyte containing lithium ions, and a cathode containing sulfur. The cathode comprises plates of a porous substrate material impregnated with sulfur alternating with layers (which may also comprise porous substrate plates) containing electrolyte.

Two-dimensional array of cold-electron bolometers for high-sensitivity polarization measurements

NASA Astrophysics Data System (ADS)

Kuzmin, L. S.

2012-01-01

A new concept of a two-dimensional array of cold-electron bolometers with distributed dipole antennas in the focal plane for high-sensitivity polarization measurements is proposed. The concept gives a unique combination of high polarization resolution due to a large uniforms array of cold-electron bolometers and optimal matching with junction field effect transistor (JFET) amplifiers because of flexibility in direct-current connections. The noise characteristics are improved due to arriving-signal power distribution among numerous cold-electron bolometers and an increase in their response. This should lead to a significant increase in the sensitivity and dynamic range compared with competing alternative bolometer technologies. The reliability of the twodimensional array significantly increases due to a series-parallel connection of a large number of cold-electron bolometers. High polarization resolution should be ensured due to uniform covering of a substrate by a two-dimensional array over a large area and the absence of the beam compression to small lumped elements. The fundamental sensitivity limit of the cold-electron bolometer array is smaller than photon noise which is considered to be the ultimate level restricted by the background radiation. Estimates of noise of bolometers with the JFET reading system show the possibility of realizing the ultimate sensitivity below the photon-noise level 5 ・10-17 W/Hz1/2 at a frequency of 350 GHz for an optical load with a power of 5 pW. These parameters correspond to the requirements to the receiving system of a BOOMERanG balloon telescope.

Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR CVD plasma

NASA Astrophysics Data System (ADS)

Manera, L. T.; Zoccal, L. B.; Diniz, J. A.; Tatsch, P. J.; Doi, I.

2008-07-01

In this paper we have developed a passivation technique with silicon-nitride (SiN X) film that requires no surface pre-treatment, and is fully compatible to monolithic microwave integrated circuits (MMICs). The nitride depositions were carried out by ECR-CVD (electron cyclotron resonance-chemical vapor deposition) directly over InGaP/GaAs heterojunction structures, which are used for heterojunction bipolar transistors (HBTs). Optical emission spectrometry (OES) was used for plasma characterization, and low formation of H and NH molecules in the gas phase was detected at pressure of 2.5 mTorr. These molecules can degrade III-V semiconductor surfaces due to the preferential loss of As or P and hydrogen incorporation at the substrate. The substrates were cleaned with organic solvents using a Sox-let distillate. The ECR depositions were carried out at a fixed substrate temperature of 20 °C, SiH 4/N 2 flow ratio of 1, Ar flow of 5 sccm pressure of 2.5 mTorr and microwave (2.45 GHz) power of 250 W and RF (13.56 MHz) power of 4 W. We have applied this film for InGaP/GaAs HBT fabrication process with excellent results, where two major contribuiton is related to this passivation technique, the enhancement in the transistor dc gain β and the improvement in the signal-to-noise ratio when compared unpassivated and passivated devices.

Moisture interaction and stability of ZOT (Zinc Orthotitanate) thermal control spacecraft coating

NASA Technical Reports Server (NTRS)

Mon, Gordon R.; Gonzalez, Charles C.; Ross, Ronald G., Jr.; Wen, Liang C.; Odonnell, Timothy

1988-01-01

Two of the many performance requirements of the zinc orthotitanate (ZOT) ceramic thermal control paint covering parts of the Jupiter-bound Galileo spacecraft are that it be sufficiently electrically conductive so as to prevent electrostatic discharge (ESD) damage to onboard electronics and that it adhere to and protect the substrate from corrosion in terrestrial environments. The bulk electrical resistivity of ZOT on an aluminum substrate was measured over the ranges 22 C to 90 C and 0 percent RH to 100 percent RH, and also in soft (10 (minus 2) Torr) and hard (10 (minus 7) Torr) vacuums. No significant temperature dependence was evident, but measured resistivity values ranged over 9 orders of magnitude: 10 to the 5th power ohm-cm at 100 percent RH greater than 10 to the 12th power ohm-cm in a hard vacuum. The latter value violates the ESD criterion for a typical 0.019 cm thick coating. The corrosion study involved exposing typical ZOT substrate combinations to two moisture environments - 30 C/85 percent RH and 85 C/85 percent RH - for 2000 hours, during which time the samples were periodically removed for front-to-back electrical resistance and scratch/peel test measurements. It was determined that the ZOT/Al and ZOT/Mg systems are stable (no ZOT delamination), although some corrosion (oxide formation) and resistivity increases observed among the ZOT/Mg samples warrant that exposure of some parts to humid environments be minimized.

Advanced Electrical Materials and Components Development: An Update

NASA Technical Reports Server (NTRS)

Schwarze, Gene E.

2005-01-01

The primary means to develop advanced electrical components is to develop new and improved materials for magnetic components (transformers, inductors, etc.), capacitors, and semiconductor switches and diodes. This paper will give an update of the Advanced Power Electronics and Components Technology being developed by the NASA Glenn Research Center for use in future Power Management and Distribution subsystems used in space power systems for spacecraft and lunar and planetary surface power. The initial description and status of this technology program was presented two years ago at the First International Energy Conversion Engineering Conference held at Portsmouth, Virginia, August 2003. The present paper will give a brief background of the previous work reported and a summary of research performed the past several years on soft magnetic materials characterization, dielectric materials and capacitor developments, high quality silicon carbide atomically smooth substrates, and SiC static and dynamic device characterization under elevated temperature conditions. The rationale for and the benefits of developing advanced electrical materials and components for the PMAD subsystem and also for the total power system will also be briefly discussed.

Thermal Performance Benchmarking: Annual Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Xuhui

In FY16, the thermal performance of the 2014 Honda Accord Hybrid power electronics thermal management systems were benchmarked. Both experiments and numerical simulation were utilized to thoroughly study the thermal resistances and temperature distribution in the power module. Experimental results obtained from the water-ethylene glycol tests provided the junction-to-liquid thermal resistance. The finite element analysis (FEA) and computational fluid dynamics (CFD) models were found to yield a good match with experimental results. Both experimental and modeling results demonstrate that the passive stack is the dominant thermal resistance for both the motor and power electronics systems. The 2014 Accord power electronicsmore » systems yield steady-state thermal resistance values around 42- 50 mm to the 2nd power K/W, depending on the flow rates. At a typical flow rate of 10 liters per minute, the thermal resistance of the Accord system was found to be about 44 percent lower than that of the 2012 Nissan LEAF system that was benchmarked in FY15. The main reason for the difference is that the Accord power module used a metalized-ceramic substrate and eliminated the thermal interface material layers. FEA models were developed to study the transient performance of 2012 Nissan LEAF, 2014 Accord, and two other systems that feature conventional power module designs. The simulation results indicate that the 2012 LEAF power module has lowest thermal impedance at a time scale less than one second. This is probably due to moving low thermally conductive materials further away from the heat source and enhancing the heat spreading effect from the copper-molybdenum plate close to the insulated gate bipolar transistors. When approaching steady state, the Honda system shows lower thermal impedance. Measurement results of the thermal resistance of the 2015 BMW i3 power electronic system indicate that the i3 insulated gate bipolar transistor module has significantly lower junction-to-liquid thermal resistance as compared to the other systems. At a flow rate of 12 liters per minute, the thermal resistance of the i3 systems is only 30 percent of the Accord system and 15 percent of the LEAF system.« less

Monolithic Carbide-Derived Carbon Films for Micro-Supercapacitors

NASA Astrophysics Data System (ADS)

Chmiola, John; Largeot, Celine; Taberna, Pierre-Louis; Simon, Patrice; Gogotsi, Yury

2010-04-01

Microbatteries with dimensions of tens to hundreds of micrometers that are produced by common microfabrication techniques are poised to provide integration of power sources onto electronic devices, but they still suffer from poor cycle lifetime, as well as power and temperature range of operation issues that are alleviated with the use of supercapacitors. There have been a few reports on thin-film and other micro-supercapacitors, but they are either too thin to provide sufficient energy or the technology is not scalable. By etching supercapacitor electrodes into conductive titanium carbide substrates, we demonstrate that monolithic carbon films lead to a volumetric capacity exceeding that of micro- and macroscale supercapacitors reported thus far, by a factor of 2. This study also provides the framework for integration of high-performance micro-supercapacitors onto a variety of devices.

Monolithic carbide-derived carbon films for micro-supercapacitors.

PubMed

Chmiola, John; Largeot, Celine; Taberna, Pierre-Louis; Simon, Patrice; Gogotsi, Yury

2010-04-23

Microbatteries with dimensions of tens to hundreds of micrometers that are produced by common microfabrication techniques are poised to provide integration of power sources onto electronic devices, but they still suffer from poor cycle lifetime, as well as power and temperature range of operation issues that are alleviated with the use of supercapacitors. There have been a few reports on thin-film and other micro-supercapacitors, but they are either too thin to provide sufficient energy or the technology is not scalable. By etching supercapacitor electrodes into conductive titanium carbide substrates, we demonstrate that monolithic carbon films lead to a volumetric capacity exceeding that of micro- and macroscale supercapacitors reported thus far, by a factor of 2. This study also provides the framework for integration of high-performance micro-supercapacitors onto a variety of devices.

Investigation of the silicon ion density during molecular beam epitaxy growth

NASA Astrophysics Data System (ADS)

Eifler, G.; Kasper, E.; Ashurov, Kh.; Morozov, S.

2002-05-01

Ions impinging on a surface during molecular beam epitaxy influence the growth and the properties of the growing layer, for example, suppression of dopant segregation and the generation of crystal defects. The silicon electron gun in the molecular beam epitaxy (MBE) equipment is used as a source for silicon ions. To use the effect of ion bombardment the mechanism of generation and distribution of ions was investigated. A monitoring system was developed and attached at the substrate position in the MBE growth chamber to measure the ion and electron densities towards the substrate. A negative voltage was applied to the substrate to modify the ion energy and density. Furthermore the current caused by charge carriers impinging on the substrate was measured and compared with the results of the monitoring system. The electron and ion densities were measured by varying the emission current of the e-gun achieving silicon growth rates between 0.07 and 0.45 nm/s and by changing the voltage applied to the substrate between 0 to -1000 V. The dependencies of ion and electron densities were shown and discussed within the framework of a simple model. The charged carrier densities measured with the monitoring system enable to separate the ion part of the substrate current and show its correlation to the generation rate. Comparing the ion density on the whole substrate and in the center gives a hint to the ion beam focusing effect. The maximum ion and electron current densities obtained were 0.40 and 0.61 μA/cm2, respectively.

Silicon nitride films deposited with an electron beam created plasma

NASA Technical Reports Server (NTRS)

Bishop, D. C.; Emery, K. A.; Rocca, J. J.; Thompson, L. R.; Zamani, H.; Collins, G. J.

1984-01-01

The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

Electron beam enhanced surface modification for making highly resolved structures

DOEpatents

Pitts, John R.

1986-01-01

A method for forming high resolution submicron structures on a substrate is provided by direct writing with a submicron electron beam in a partial pressure of a selected gas phase characterized by the ability to dissociate under the beam into a stable gaseous leaving group and a reactant fragment that combines with the substrate material under beam energy to form at least a surface compound. Variations of the method provide semiconductor device regions on doped silicon substrates, interconnect lines between active sites, three dimensional electronic chip structures, electron beam and optical read mass storage devices that may include color differentiated data areas, and resist areas for use with selective etching techniques.

Electron beam enhanced surface modification for making highly resolved structures

DOEpatents

Pitts, J.R.

1984-10-10

A method for forming high resolution submicron structures on a substrate is provided by direct writing with a submicron electron beam in a partial pressure of a selected gas phase characterized by the ability to dissociate under the beam into a stable gaseous leaving group and a reactant fragment that combines with the substrate material under beam energy to form at least a surface compound. Variations of the method provide semiconductor device regions on doped silicon substrates, interconnect lines between active sites, three dimensional electronic chip structures, electron beam and optical read mass storage devices that may include color differentiated data areas, and resist areas for use with selective etching techniques.

GaAs VLSI for aerospace electronics

NASA Technical Reports Server (NTRS)

Larue, G.; Chan, P.

1990-01-01

Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

Development of Enterobacter aerogenes fuel cells: from in situ biohydrogen oxidization to direct electroactive biofilm.

PubMed

Zhuang, Li; Zhou, Shungui; Yuan, Yong; Liu, Tinglin; Wu, Zhifeng; Cheng, Jiong

2011-01-01

This study described an Enterobacter aerogenes-catalyzed microbial fuel cell (MFC) with a carbon-based anode that exhibited a maximum power density of 2.51 W/m(3) in the absence of artificial electron mediators. The MFC was started up rapidly, within hours, and the current generation in the early stage was demonstrated to result from in situ oxidation of biohydrogen produced by E. aerogenes during glucose fermentation. Over periodic replacement of substrate, both planktonic biomass in the culture liquid and hydrogen productivity decreased, while increased power density and coulombic efficiency and decreased internal resistance were unexpectedly observed. Using scanning electron microscopy and cyclic voltammetry, it was found that the enhanced MFC performance was associated with the development of electroactive biofilm on the anodic surface, proposed to involve an acclimation and selection process of E. aerogenes cells under electrochemical tension. The significant advantage of rapid start-up and the ability to develop an electroactive biofilm identifies E. aerogenes as a suitable biocatalyst for MFC applications. Copyright © 2010 Elsevier Ltd. All rights reserved.

Size and shape dependence of CO adsorption sites on sapphire supported Fe microcrystals

NASA Technical Reports Server (NTRS)

Papageorgopoulos, C.; Heinemann, K.

1985-01-01

The surface structure and stoichiometry of alumina substrates, as well as the size, growth characteristics, and shape of Fe deposits on sapphire substrates have been investigated by low energy electron diffraction (LEED), Auger electron spectroscopy, electron energy loss spectroscopy, and X-ray photoemission spectroscopy (XPS), as well as work function measurements, in conjunction with transition electron microscopy observations. The substrates used in this work were the following: (1) new, clean Al2O3; (2) same surface amorphized by Ar ion bombardment; (3) same surface regenerated by 650 C annealing; (4) amorphous alumina films on Ta slab; and (5) polycrystal alumina films, obtained by heating amorphous films to 600 C. Substrate cleaning was found to be most effective in producing a reproducible surface upon oxygen RF plasma treatment. The Fe nucleation and growth process was found to depend strongly on the type of substrate surface and deposition conditions. Ar ion bombardment under beam flooding, and subsequent annealing at 650 C was found an effective means to restore the original Al2O3 (1102) surface for renewed Fe deposition.

The use of nanomaterials for mass spectrometry can be uplifting for analyte detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, J.; Lipson, R. H.

2014-03-31

Surface-Assisted Laser Desorption Ionization (SALDI) involves desorbing and ionizing analyte molecules from a nanoporous substrate by laser irradiation for detection in a mass spectrometer. In this work experiments were designed to better understand the mechanisms governing desorption and ionization for Desorption Ionization On Silicon (DIOS), a variant of SALDI which uses porous silicon (pSi) as a substrate. Experiments are also reported for other nanoporous semiconducting materials (WO{sub 3}, TiO{sub 2}) which exhibit very similar behaviors; specifically, that both protonated analyte ions and analyte radical cations can be generated with relative intensities that depend on the position of the incident lasermore » focus relative to substrate surface. While thermal desorption appears to be important, preliminary evidence suggests that the ionization mechanism leading to protonated analytes involves in part electrons and holes formed when photoexciting the substrate above its electronic band gap, and the presence of defect states within the band gap. Radical cation formation appears to be driven in part by electron transfer due to the large electron affinity of each substrate used in this work.« less

Method for integrating microelectromechanical devices with electronic circuitry

DOEpatents

Montague, S.; Smith, J.H.; Sniegowski, J.J.; McWhorter, P.J.

1998-08-25

A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry. The method comprises the steps of forming each MEM device within a cavity below a device surface of the substrate; encapsulating the MEM device prior to forming electronic circuitry on the substrate; and releasing the MEM device for operation after fabrication of the electronic circuitry. Planarization of the encapsulated MEM device prior to formation of the electronic circuitry allows the use of standard processing steps for fabrication of the electronic circuitry. 13 figs.

A thin porous substrate using bonded particles for reverse-emulsion electrophoretic displays

NASA Astrophysics Data System (ADS)

Ahumada, M.; Bryning, M.; Cromer, R.; Hartono, M.; Lee, S. J.

2012-03-01

A thin porous layer of bonded ceramic microparticles has been developed to provide structural integrity and a stationary matrix for use in reflective-mode reverse-emulsion electrophoretic displays (REED), based on self-assembled nanodroplets dispersed in a non-polar liquid. REED ink uses low-cost materials and manufacturing processes, yet is capable of video speed and low voltage operation below 10 V. Porous layers of titanium dioxide (TiO2) are prepared as thin as 10 microns by fluidizing the particles in a water-based slurry with polymeric adhesive. The slurry is distributed between glass shear plates, one of which serves as the substrate for the working device. Particle morphology is examined using scanning electron microscopy and layer uniformity is characterized by opacity measurements using a throughbeam fiber optic sensor. Performance of the bonded matrix with REED ink is compared to baseline performance of a paste mixture, comprised of the same ink and unbonded TiO2 particles. Results show that at 25% volume fraction, the bonded substrate improves image bistability and is better able to maintain both light and dark intensity after extensive switching. The same bonded substrate also improves image bistability when power is disconnected, even compared to a paste with 40% volume fraction of TiO2.

Interface characterization of Cu-Mo coating deposited on Ti-Al alloys by arc spraying

NASA Astrophysics Data System (ADS)

Bai, Shengqiang; Li, Fei; Wu, Ting; Yin, Xianglin; Shi, Xun; Chen, Lidong

2015-03-01

Cu-Mo pseudobinary alloys are promising candidates as electrode materials in CoSb3-based skutterudite thermoelectric (TE) devices for TE power generation. In this study, Cu-Mo coatings were deposited onto Ti-Al substrates by applying a dual-wire electric arc spraying coating technique. The microstructure of the surfaces, cross sections and coating interfaces were analyzed by scanning electron microscopy (SEM) and energy dispersion spectrometry (EDS). Cu-Mo coatings showed a typical banded splat with compact microstructures, and have no coarse pores nor micro-cracks. The thermal shock resistance of the Cu-Mo coating was also investigated to show good combinations with Ti-Al substrates. After 50 thermal shock cycles, there were no cracks observed at the interface. In contrast, the test of the thermal shock resistance of the Cu coating on the Ti-Al substrate was also investigated. Due to a large difference in the thermal expansion coefficients between Cu and Ti-Al alloys, the Cu coating flaked from the Ti-Al substrate completely after 10 thermal shock cycles. The contact resistivity of the Ti-Al/Cu-Mo interface was about 1.6 μΩṡcm2 and this value was unchanged after 50 thermal shock cycles, indicating the low electric resistance and high thermal stability of the Cu-Mo/Ti-Al interface.

Micromotors Powered by Enzyme Catalysis.

PubMed

Dey, Krishna K; Zhao, Xi; Tansi, Benjamin M; Méndez-Ortiz, Wilfredo J; Córdova-Figueroa, Ubaldo M; Golestanian, Ramin; Sen, Ayusman

2015-12-09

Active biocompatible systems are of great current interest for their possible applications in drug or antidote delivery at specific locations. Herein, we report the synthesis and study of self-propelled microparticles powered by enzymatic reactions and their directed movement in substrate concentration gradient. Polystyrene microparticles were functionalized with the enzymes urease and catalase using a biotin-streptavidin linkage procedure. The motion of the enzyme-coated particles was studied in the presence of the respective substrates, using optical microscopy and dynamic light scattering analysis. The diffusion of the particles was found to increase in a substrate concentration dependent manner. The directed chemotactic movement of these enzyme-powered motors up the substrate gradient was studied using three-inlet microfluidic channel architecture.

Hydrogenated amorphous silicon solar cells fabricated at low substrate temperature 110°C on flexible PET substrate

NASA Astrophysics Data System (ADS)

Ramakrishna, M.; Kumari, Juhi; Venkanna, K.; Agarwal, Pratima

2018-05-01

In this paper, we report a-Si:H solar cells fabricated on flexible Polyethylene terephthalate (PET) and corning glass. The a-Si:H thin films were prepared at low substrate temperature (110oC) on corning 1737 glass with different rf powers. The influence of rf power on structural and optoelectronic properties of i-a-Si:H were studied. The films deposited at rf power 50W show less broadening of <ɛ2> peak. This indicates these films are more ordered. With this optimized parameter for i-layer, solar cells fabricated on flexible PET substrate show best efficiency of 3.3% whereas on corning glass 3.82%.

Alkylamine capped metal nanoparticle "inks" for printable SERS substrates, electronics and broadband photodetectors.

PubMed

Polavarapu, Lakshminarayana; Manga, Kiran Kumar; Yu, Kuai; Ang, Priscilla Kailian; Cao, Hanh Duyen; Balapanuru, Janardhan; Loh, Kian Ping; Xu, Qing-Hua

2011-05-01

We report a facile and general method for the preparation of alkylamine capped metal (Au and Ag) nanoparticle "ink" with high solubility. Using these metal nanoparticle "inks", we have demonstrated their applications for large scale fabrication of highly efficient surface enhanced Raman scattering (SERS) substrates by a facile solution processing method. These SERS substrates can detect analytes down to a few nM. The flexible plastic SERS substrates have also been demonstrated. The annealing temperature dependent conductivity of the nanoparticle films indicated a transition temperature above which high conductivity was achieved. The transition temperature could be tailored to the plastic compatible temperatures by using proper alkylamine as the capping agent. The ultrafast electron relaxation studies of the nanoparticle films demonstrated that faster electron relaxation was observed at higher annealing temperatures due to stronger electronic coupling between the nanoparticles. The applications of these highly concentrated alkylamine capped metal nanoparticle inks for the printable electronics were demonstrated by printing the oleylamine capped gold nanoparticles ink as source and drain for the graphene field effect transistor. Furthermore, the broadband photoresponse properties of the Au and Ag nanoparticle films have been demonstrated by using visible and near-infrared lasers. These investigations demonstrate that these nanoparticle "inks" are promising for applications in printable SERS substrates, electronics, and broadband photoresponse devices. © The Royal Society of Chemistry 2011

Simulation of electron transport during electron-beam-induced deposition of nanostructures

PubMed Central

Jeschke, Harald O; Valentí, Roser

2013-01-01

Summary We present a numerical investigation of energy and charge distributions during electron-beam-induced growth of tungsten nanostructures on SiO2 substrates by using a Monte Carlo simulation of the electron transport. This study gives a quantitative insight into the deposition of energy and charge in the substrate and in the already existing metallic nanostructures in the presence of the electron beam. We analyze electron trajectories, inelastic mean free paths, and the distribution of backscattered electrons in different compositions and at different depths of the deposit. We find that, while in the early stages of the nanostructure growth a significant fraction of electron trajectories still interacts with the substrate, when the nanostructure becomes thicker the transport takes place almost exclusively in the nanostructure. In particular, a larger deposit density leads to enhanced electron backscattering. This work shows how mesoscopic radiation-transport techniques can contribute to a model that addresses the multi-scale nature of the electron-beam-induced deposition (EBID) process. Furthermore, similar simulations can help to understand the role that is played by backscattered electrons and emitted secondary electrons in the change of structural properties of nanostructured materials during post-growth electron-beam treatments. PMID:24367747

High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

NASA Technical Reports Server (NTRS)

Connolly, J. C.; Goldstein, B.; Pultz, G. N.; Slavin, S. E.; Carlin, D. B.; Ettenberg, M.

1988-01-01

A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.

Microfabrication of passive electronic components with printed graphene-oxide deposition

NASA Astrophysics Data System (ADS)

Sinar, Dogan; Knopf, George K.; Nikumb, Suwas

2014-03-01

Flexible electronic circuitry is an emerging technology that will significantly impact the future of healthcare and medicine, food safety inspection, environmental monitoring, and public security. Recent advances in drop-on-demand printing technology and electrically conductive inks have enabled simple electronic circuits to be fabricated on mechanically flexible polymers, paper, and bioresorbable silk. Research has shown that graphene, and its derivative formulations, can be used to create low-cost electrically conductive inks. Graphene is a one atom thick two-dimensional layer composed of carbon atoms arranged in a hexagonal lattice forming a material with very high fracture strength, high Young's Modulus, and low electrical resistance. Non-conductive graphene-oxide (GO) inks can also be synthesized from inexpensive graphite powders. Once deposited on the flexible substrate the electrical conductivity of the printed GO microcircuit traces can be restored through thermal reduction. In this paper, a femtosecond laser with a wavelength of 775nm and pulse width of 120fs is used to transform the non-conductive printed GO film into electrically conductive oxygen reduced graphene-oxide (rGO) passive electronic components by the process of laser assisted thermal reduction. The heat affected zone produced during the process was minimized because of the femtosecond pulsed laser. The degree of conductivity exhibited by the microstructure is directly related to the laser power level and exposure time. Although rGO films have higher resistances than pristine graphene, the ability to inkjet print capacitive elements and modify local resistive properties provides for a new method of fabricating sensor microcircuits on a variety of substrate surfaces.

Deployable Propulsion, Power and Communication Systems for Solar System Exploration

NASA Technical Reports Server (NTRS)

Johnson, Les; Carr, John A.; Boyd, Darren

2017-01-01

NASA is developing thin-film based, deployable propulsion, power, and communication systems for small spacecraft that could provide a revolutionary new capability allowing small spacecraft exploration of the solar system. By leveraging recent advancements in thin films, photovoltaics, and miniaturized electronics, new mission-level capabilities will be enabled aboard lower-cost small spacecraft instead of their more expensive, traditional counterparts, enabling a new generation of frequent, inexpensive deep space missions. Specifically, thin-film technologies are allowing the development and use of solar sails for propulsion, small, lightweight photovoltaics for power, and omnidirectional antennas for communication. Like their name implies, solar sails 'sail' by reflecting sunlight from a large, lightweight reflective material that resembles the sails of 17th and 18th century ships and modern sloops. Instead of wind, the sail and the ship derive their thrust by reflecting solar photons. Solar sail technology has been discussed in the literature for quite some time, but it is only since 2010 that sails have been proven to work in space. Thin-film photovoltaics are revolutionizing the terrestrial power generation market and have been found to be suitable for medium-term use in the space environment. When mounted on the thin-film substrate, these photovoltaics can be packaged into very small volumes and used to generate significant power for small spacecraft. Finally, embedded antennas are being developed that can be adhered to thin-film substrates to provide lightweight, omnidirectional UHF and X-band coverage, increasing bandwidth or effective communication ranges for small spacecraft. Taken together, they may enable a host of new deep space destinations to be reached by a generation of spacecraft smaller and more capable than ever before.

Electronic characterization of silicon intercalated chevron graphene nanoribbons on Au(111).

PubMed

Deniz, O; Sánchez-Sánchez, C; Jaafar, R; Kharche, N; Liang, L; Meunier, V; Feng, X; Müllen, K; Fasel, R; Ruffieux, P

2018-02-08

Electronic and thermal properties of chevron-type graphene nanoribbons can be widely tuned, making them interesting candidates for electronic and thermoelectric applications. Here, we use post-growth silicon intercalation to unambiguously access nanoribbons' energy position of their electronic frontier states. These are otherwise obscured by substrate effects when investigated directly on the growth substrate. In agreement with first-principles calculations we find a band gap of 2.4 eV.

Effect of Few-Layered Graphene-Based CdO Nanocomposite-Enhanced Power Conversion Efficiency of Dye-Sensitized Solar Cell

NASA Astrophysics Data System (ADS)

Bykkam, Satish; Kalagadda, Bikshalu; Kalagadda, Venkateswara Rao; Ahmadipour, Mohsen; Chakra, Ch. Shilpa; Rajendar, V.

2018-01-01

A few-layered graphene (FLG)/cadmium oxide (CdO) nanocomposite was sucessfully prepared through ultrasonic-assisted synthesis. The morphology of FLG (1.0 wt.%, 2.0 wt.%, and 3.0 wt.%)/CdO nanocomposites were characterized using high-resolution transmission electron microscopy and field emission scanning electron microscopy techniques. The optical properties were studied with the help of UV-Vis diffuse reflectance spectroscopy and Raman spectroscopy, while the crystalline phases were analyzed using x-ray diffraction. The doctor blade method was used to deposit FLG/CdO nanocomposites on fluorine-doped tin oxide conductive glass substrates. The effect of FLG weight percentage (1.0 wt.%, 2.0 wt.%, and 3.0 wt.%) was studied on the power conversion efficiency of dye-sensitized solar cell applications. The photovoltaic characteristics, current density-voltage curves were measured with ruthenium (II)-based dye under air mass condition 1.5G, 100 m W m-2 of a solar simulator. The results showed that higher power conversion efficiency of 3.54% was achieved at the appropriate weight percentage of FLG (1.0 wt.%)/CdO nanocomposite, compared to the CdO and other nanocomposite working electrodes FLG (2.0 wt.%, and 3.0 wt.%)/CdO.

Van der Waals Epitaxy of Functional Oxide Heterostructures

NASA Astrophysics Data System (ADS)

Chu, Ying-Hao

In the diligent pursuit of low-power consumption, multifunctional, and environmentally friendly electronics, more sophisticated requirements on functional materials are on demand. Recently, the discovery of 2D layered materials has created a revolution to this field. Pioneered by graphene, these new 2D materials exhibit abundant unusual physical phenomena that is undiscovered in bulk forms. These materials are characterized with their layer form and almost pure 2D electronic behavior. The confinement of charge and heat transport at such ultrathin planes offers possibilities to overcome the bottleneck of present device development in thickness limitation, and thus push the technologies into next generation. Van der Waals epitaxy, an epitaxial growth method to combine 2D and 3D materials, is one of current reliable manufacturing processes to fabricate 2D materials by growing these 2D materials epitaxially on 3D materials. Then, transferring the 2D materials to the substrates for practical applications. In the mean time, van der Waals epitaxy has also been used to create free-standing 3D materials by growing 3D materials on 2D materials and then removing them from 2D materials since the interfacial boding between 2D and 3D materials should be weak van der Waals bonds. In this study, we intend to take the same concept, but to integrate a family of functional materials in order to open new avenue to flexible electronics. Due to the interplay of lattice, charge, orbital, and spin degrees of freedom, correlated electrons in oxides generate a rich spectrum of competing phases and physical properties. Recently, lots of studies have suggested that oxide heterostructures provide a powerful route to create and manipulate the degrees of freedom and offer new possibilities for next generation devices, thus create a new playground for researchers to investigate novel physics and the emergence of fascinating states of condensed matter. In this talk, we use a 2D layered material as the substrate. And we take several oxides as examples to demonstrate a pathway to integrate 3D functional oxides on 2D layered materials.

Method of producing an electronic unit having a polydimethylsiloxane substrate and circuit lines

DOEpatents

Davidson, James Courtney [Livermore, CA; Krulevitch, Peter A [Pleasanton, CA; Maghribi, Mariam N [Livermore, CA; Benett, William J [Livermore, CA; Hamilton, Julie K [Tracy, CA; Tovar, Armando R [San Antonio, TX

2012-06-19

A system of metalization in an integrated polymer microsystem. A flexible polymer substrate is provided and conductive ink is applied to the substrate. In one embodiment the flexible polymer substrate is silicone. In another embodiment the flexible polymer substrate comprises poly(dimethylsiloxane).

Nanoelectronics and Plasma Processing---The Next 15 Years and Beyond

NASA Astrophysics Data System (ADS)

Lieberman, Michael A.

2006-10-01

The number of transistors per chip has doubled every 2 years since 1959, and this doubling will continue over the next 15 years as transistor sizes shrink. There has been a 25 million-fold decrease in cost for the same performance, and in 15 years a desktop computer will be hundreds of times more powerful than one today. Transistors now have 37 nm (120 atoms) gate lengths and 1.5 nm (5 atoms) gate oxide thicknesses. The smallest working transistor has a 5 nm (17 atoms) gate length, close to the limiting gate length, from simulations, of about 4 nm. Plasma discharges are used to fabricate hundreds of billions of these nano-size transistors on a silicon wafer. These discharges have evolved from a first generation of ``low density'' reactors capacitively driven by a single source, to a second generation of ``high density'' reactors (inductive and electron cyclotron resonance) having two rf power sources, in order to control independently the ion flux and ion bombarding energy to the substrate. A third generation of ``moderate density'' reactors, driven capacitively by one high and one low frequency rf source, is now widely used. Recently, triple frequency and combined dc/dual frequency discharges have been investigated, to further control processing characteristics, such as ion energy distributions, uniformity, and plasma etch selectivities. There are many interesting physics issues associated with these discharges, including stochastic heating of discharge electrons by dual frequency sheaths, nonlinear frequency interactions, powers supplied by the multi-frequency sources, and electromagnetic effects such as standing waves and skin effects. Beyond the 4 nm transistor limit lies a decade of further performance improvements for conventional nanoelectronics, and beyond that, a dimly-seen future of spintronics, single-electron transistors, cross-bar latches, and molecular electronics.

Damage induced to DNA by low-energy (0-30 eV) electrons under vacuum and atmospheric conditions.

PubMed

Brun, Emilie; Cloutier, Pierre; Sicard-Roselli, Cécile; Fromm, Michel; Sanche, Léon

2009-07-23

In this study, we show that it is possible to obtain data on DNA damage induced by low-energy (0-30 eV) electrons under atmospheric conditions. Five monolayer films of plasmid DNA (3197 base pairs) deposited on glass and gold substrates are irradiated with 1.5 keV X-rays in ultrahigh vacuum and under atmospheric conditions. The total damage is analyzed by agarose gel electrophoresis. The damage produced on the glass substrate is attributed to energy absorption from X-rays, whereas that produced on the gold substrate arises from energy absorption from both the X-ray beam and secondary electrons emitted from the gold surface. By analysis of the energy of these secondary electrons, 96% are found to have energies below 30 eV with a distribution peaking at 1.4 eV. The differences in damage yields recorded with the gold and glass substrates is therefore essentially attributed to the interaction of low-energy electrons with DNA under vacuum and hydrated conditions. From these results, the G values for low-energy electrons are determined to be four and six strand breaks per 100 eV, respectively.

Substrate Engineered Interconnected Graphene Electrodes with Ultrahigh Energy and Power Densities for Energy Storage Applications.

PubMed

Chaichi, Ardalan; Wang, Ying; Gartia, Manas Ranjan

2018-06-27

Supercapacitors combine the advantages of electrochemical storage technologies such as high energy density batteries and high power density capacitors. At 5-10 W h kg -1 , the energy densities of current supercapacitors are still significantly lower than the energy densities of lead acid (20-35 W h kg -1 ), Ni-metal hydride (40-100 W h kg -1 ), and Li-ion (120-170 W h kg -1 ) batteries. Recently, graphene-based supercapacitors have shown an energy density of 40-80 W h kg -1 . However, their performance is mainly limited because of the reversible agglomeration and restacking of individual graphene layers caused by π-π interactions. The restacking of graphene layers leads to significant decrease of ion-accessible surface area and the low capacitance of graphene-based supercapacitors. Here, we introduce a microstructure substrate-based method to produce a fully delaminated and stable interconnected graphene structure using flash reduction of graphene oxide in a few seconds. With this structure, we achieve the highest amount of volumetric capacitance obtained so far by any type of a pure carbon-based material. The affordable and scalable production method is capable of producing electrodes with an energy density of 0.37 W h cm -3 and a power density of 416.6 W cm -3 . This electrode maintained more than 91% of its initial capacitance after 5000 cycles. Moreover, combining with ionic liquid, this solvent-free graphene electrode material is highly promising for on-chip electronics, micro-supercapacitors, as well as high-power applications.

PtCu substrates subjected to AC and DC electric fields in a solution of benzene sulfonic acid-phenol as novel batteries and their use in glucose biofuel cells

NASA Astrophysics Data System (ADS)

Ammam, Malika; Fransaer, Jan

2013-11-01

We describe how bi-metal PtCu connected wires, immersed in a solution of benzene sulfonic acid (BSA)-phenol (P) or 2,2‧-azino-bis(3-ethylbenzothiazoline-6-sulphonic acid) (ABTS)-phenol (P), then subjected to simultaneous alternating current (AC) and direct current (DC) electric fields generate power. We discovered that PtCu substrate covered by the deposit containing (BSA-PP-Pt-Cu), abbreviated as PtCu(BSA-PP-Pt-Cu) electrode, plays the role of a substantial anode and cathode. The latter was related to the formation of micro-batteries in the deposited film (BSA-PP-Pt-Cu) that are able to take or deliver electrons from the deposited Pt and Cu, respectively. PP-BSA plays probably the role of bridge for proton conduction in the formed micro-batteries. The power density of the fuel cell (FC)-based PtCu(BSA-PP-Pt-Cu) anode and PtCu(BSA-PP-Pt-Cu) cathode in phosphate buffer solution pH 7.4 at room temperature reaches ˜10.8 μW mm-2. Addition of enzymes, glucose oxidase at the anode and laccase at the cathode and, replacement of BSA by ABTS at the cathode in the deposited films increases the power density to 13.3 μW mm-2. This new procedure might be of great relevance for construction of a new generation of FCs operating at mild conditions or boost the power outputs of BFCs and make them suitable for diverse applications.

Exploration of CIGAS Alloy System for Thin-Film Photovoltaics on Novel Lightweight and Flexible Substrates

NASA Technical Reports Server (NTRS)

Woods, Lawrence M.; Kalla, Ajay; Ribelin, Rosine

2007-01-01

Thin-film photovoltaics (TFPV) on lightweight and flexible substrates offer the potential for very high solar array specific power (W/kg). ITN Energy Systems, Inc. (ITN) is developing flexible TFPV blanket technology that has potential for specific power greater than 2000 W/kg (including space coatings) that could result in solar array specific power between 150 and 500 W/kg, depending on array size, when mated with mechanical support structures specifically designed to take advantage of the lightweight and flexible substrates.(1) This level of specific power would far exceed the current state of the art for spacecraft PV power generation, and meet the needs for future spacecraft missions.(2) Furthermore the high specific power would also enable unmanned aircraft applications and balloon or high-altitude airship (HAA) applications, in addition to modular and quick deploying tents for surface assets or lunar base power, as a result of the high power density (W/sq m) and ability to be integrated into the balloon, HAA or tent fabric. ITN plans to achieve the high specific power by developing single-junction and two-terminal monolithic tandem-junction PV cells using thin-films of high-efficiency and radiation resistant CuInSe2 (CIS) partnered with bandgap-tunable CIS-alloys with Ga (CIGS) or Al (CIAS) on novel lightweight and flexible substrates. Of the various thin-film technologies, single-junction and radiation resistant CIS and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of TFPV device performance, with the best efficiency reaching 19.5% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys will achieve the highest levels of thin-film space and HAA solar array performance.

Support effects on adsorption and catalytic activation of O2 in single atom iron catalysts with graphene-based substrates.

PubMed

Gao, Zheng-Yang; Yang, Wei-Jie; Ding, Xun-Lei; Lv, Gang; Yan, Wei-Ping

2018-03-07

The adsorption and catalytic activation of O 2 on single atom iron catalysts with graphene-based substrates were investigated systematically by density functional theory calculation. It is found that the support effects of graphene-based substrates have a significant influence on the stability of the single atom catalysts, the adsorption configuration, the electron transfer mechanism, the adsorption energy and the energy barrier. The differences in the stable adsorption configuration of O 2 on single atom iron catalysts with different graphene-based substrates can be well understood by the symmetrical matching principle based on frontier molecular orbital analysis. There are two different mechanisms of electron transfer, in which the Fe atom acts as the electron donor in single vacancy graphene-based substrates while the Fe atom mainly acts as the bridge for electron transfer in double vacancy graphene-based substrates. The Fermi softness and work function are good descriptors of the adsorption energy and they can well reveal the relationship between electronic structure and adsorption energy. This single atom iron catalyst with single vacancy graphene modified by three nitrogen atoms is a promising non-noble metal single atom catalyst in the adsorption and catalytic oxidation of O 2 . Furthermore, the findings can lay the foundation for the further study of graphene-based support effects and provide a guideline for the development and design of new non-noble-metal single atom catalysts.

Tribological and structural properties of titanium nitride and titanium aluminum nitride coatings deposited with modulated pulsed power magnetron sputtering

NASA Astrophysics Data System (ADS)

Ward, Logan

The demand for economical high-performance materials has brought attention to the development of advanced coatings. Recent advances in high power magnetron sputtering (HPPMS) have shown to improve tribological properties of coatings. These coatings offer increased wear and oxidation resistance, which may facilitate the use of more economical materials in harsh applications. This study demonstrates the use of novel forms of HPPMS, namely modulated pulsed-power magnetron sputtering (MPPMS) and deep oscillation magnetron sputtering (DOMS), for depositing TiN and Ti1-xAlxN tribological coatings on commonly used alloys, such as Ti-6Al-4V and Inconel 718. Both technologies have been shown to offer unique plasma characteristics in the physical vapor deposition (PVD) process. High power pulses lead to a high degree of ionization compared to traditional direct-current magnetron sputtering (DCMS) and pulsed magnetron sputtering (PMS). Such a high degree of ionization was previously only achievable by cathodic arc deposition (CAD); however, CAD can lead to increased macroparticles that are unfavorable in high friction and corrosive environments. MPPMS, DOMS, and other HPPMS techniques offer unique plasma characteristics and have been shown to produce coatings with refined grain structure, improved density, hardness, adhesion, and wear resistance. Using DOMS and MPPMS, TiN and Ti1-xAlxN coatings were deposited using PMS to compare microstructures and tribological performance. For Ti1-xAlxN, two sputtering target compositions, Ti 0.5Al0.5 and Ti0.3Al0.7, were used to evaluate the effects of MPPMS on the coating's composition and tribological properties. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD) were used to characterize microstructure and crystallographic texture. Several tribological properties were evaluated including: wear rate, coefficient of friction, adhesion, and nanohardness. Results show that substrate material can have a significant effect on adhesion and the mechanical response between the coating and substrate. Depending on deposition parameters and the selected material MPPMS and DOMS are promising alternatives to DCMS, PMS, and CAD.

Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector

NASA Astrophysics Data System (ADS)

Dalla Betta, G. F.; Tyzhnevyi, V.; Bosi, A.; Bonaiuti, M.; Angelini, C.; Batignani, G.; Bettarini, S.; Bosi, F.; Forti, F.; Giorgi, M. A.; Morsani, F.; Paoloni, E.; Rizzo, G.; Walsh, J.; Lusiani, A.; Ciolini, R.; Curzio, G.; D'Errico, F.; Del Gratta, A.; Bidinelli, L.; Rovati, L.; Saguatti, D.; Verzellesi, G.; Bosisio, L.; Rachevskaia, I.; Boscardin, M.; Giacomini, G.; Picciotto, A.; Piemonte, C.; Zorzi, N.; Calamosca, M.; Penzo, S.; Cardellini, F.

2013-08-01

A battery-powered, wireless Radon sensor has been designed and realized using a BJT, fabricated on a high-resistivity-silicon substrate, as a radiation detector. Radon daughters are electrostatically collected on the detector surface. Thanks to the BJT internal amplification, real-time α particle detection is possible using simple readout electronics, which records the particle arrival time and charge. Functional tests at known Radon concentrations, demonstrated a sensitivity up to 4.9 cph/(100 Bq/m3) and a count rate of 0.05 cph at nominally-zero Radon concentration.

A model for adatom structures

NASA Astrophysics Data System (ADS)

Kappus, W.

1981-06-01

A model concerning adatom structures is proposed. Attractive nearest neighbour interactions, which may be of electronic nature lead to 2-dimensional condensation. Every pair bond causes and elastic dipole. The elastic dipoles interact via substrate strains with an anisotropic s -3 power law. Different types of adatoms or sites are permitted and many-body effects result, from the assumptions. Electric dipole interactions of adatoms are included for comparison. The model is applied to the W(110) surface and compared with superstructures experimentally found in the W(110)-0 system. It is found that there is still lack for an additional next-nearest neighbour interaction.

Photoredox Catalysis in Organic Chemistry

PubMed Central

2016-01-01

In recent years, photoredox catalysis has come to the forefront in organic chemistry as a powerful strategy for the activation of small molecules. In a general sense, these approaches rely on the ability of metal complexes and organic dyes to convert visible light into chemical energy by engaging in single-electron transfer with organic substrates, thereby generating reactive intermediates. In this Perspective, we highlight the unique ability of photoredox catalysis to expedite the development of completely new reaction mechanisms, with particular emphasis placed on multicatalytic strategies that enable the construction of challenging carbon–carbon and carbon–heteroatom bonds. PMID:27477076

Annealing effect and photovoltaic properties of nano-ZnS/textured p-Si heterojunction.

PubMed

Ji, Liang-Wen; Hsiao, Yu-Jen; Tang, I-Tseng; Meen, Teen-Hang; Liu, Chien-Hung; Tsai, Jenn-Kai; Wu, Tien-Chuan; Wu, Yue-Sian

2013-11-09

The preparation and characterization of heterojunction solar cell with ZnS nanocrystals synthesized by chemical bath deposition method were studied in this work. The ZnS nanocrystals were characterized by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Lower reflectance spectra were found as the annealing temperature of ZnS film increased on the textured p-Si substrate. It was found that the power conversion efficiency (PCE) of the AZO/ZnS/textured p-Si heterojunction solar cell with an annealing temperature of 250°C was η = 3.66%.

Annealing effect and photovoltaic properties of nano-ZnS/textured p-Si heterojunction

PubMed Central

2013-01-01

The preparation and characterization of heterojunction solar cell with ZnS nanocrystals synthesized by chemical bath deposition method were studied in this work. The ZnS nanocrystals were characterized by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Lower reflectance spectra were found as the annealing temperature of ZnS film increased on the textured p-Si substrate. It was found that the power conversion efficiency (PCE) of the AZO/ZnS/textured p-Si heterojunction solar cell with an annealing temperature of 250°C was η = 3.66%. PMID:24206942

Annealing effect and photovoltaic properties of nano-ZnS/textured p-Si heterojunction

NASA Astrophysics Data System (ADS)

Ji, Liang-Wen; Hsiao, Yu-Jen; Tang, I.-Tseng; Meen, Teen-Hang; Liu, Chien-Hung; Tsai, Jenn-Kai; Wu, Tien-Chuan; Wu, Yue-Sian

2013-11-01

The preparation and characterization of heterojunction solar cell with ZnS nanocrystals synthesized by chemical bath deposition method were studied in this work. The ZnS nanocrystals were characterized by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Lower reflectance spectra were found as the annealing temperature of ZnS film increased on the textured p-Si substrate. It was found that the power conversion efficiency (PCE) of the AZO/ZnS/textured p-Si heterojunction solar cell with an annealing temperature of 250°C was η = 3.66%.

Porous tungsten prepared by atmospheric-pressure chemical vapor deposition with WF6 and its characterization

NASA Astrophysics Data System (ADS)

Li, Ying; Yu, Xiaodong; Tan, Chengwen; Wang, Fuchi; Ma, Honglei; Yue, Jintao

2017-05-01

Porous tungsten (W) is used in aeronautic and aerospace engineering, power electronics field and metallurgical industry. In this study, porous W with 98wt% W was prepared on a carbon foam substrate by atmospheric-pressure chemical vapor deposition (CVD) with tungsten fluoride (WF6) as the precursor. The porous W with 78.1346% porosity displayed a pure α-W phase and the uniform surface. The mode pore diameter of porous W is 208.0 µm. In a compression test, the fracture strength of porous W is 20.3 MPa.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marrakchi, G.; Barbier, D.; Guillot, G.

Electrical and deep level transient spectroscopy measurements on Schottky barriers were performed in order to characterize electrically active defects in n-type GaAs (Bridgman substrates or liquid-phase epitaxial layers) after pulsed electron beam annealing. Both surface damage and bulk defects were observed in the Bridgman substrates depending on the pulse energy density. No electron traps were detected in the liquid-phase epitaxial layers before and after annealing for an energy density of 0.4 J/cm/sup 2/. The existence of an interfacial insulating layer at the metal-semiconductor interface, associated with As out-diffusion during the pulsed electron irradiation, was revealed by the abnormally high valuesmore » of the Schottky barrier diffusion potential. Moreover, two new electron traps with activation energy of 0.35 and 0.43 eV, called EP1 and EP2, were introduced in the Bridgman substrates after pulsed electron beam annealing. The presence of these traps, related to the As evaporation, was tentatively attributed to the decrease of the EL2 electron trap signal after 0.4-J/cm/sup 2/ annealing. It is proposed that these new defects states are due to the decomposition of the As/sub Ga/-As/sub i/ complex recently considered as the most probable defect configuration for the dominant EL2 electron trap usually detected in as-grown GaAs substrates.« less

Precise Nanoelectronics with Adatom Chains

NASA Technical Reports Server (NTRS)

Yamada, Toshishige

1999-01-01

Adatom chains on an atomically regulated substrate will be building components in future precise nanoelectronics. Adatoms need to be secured with chemical bonding, but then electronic isolation between the adatom and substrate systems is not guaranteed. A one-dimensional model shows that good isolation with existence of surface states is expected on an s-p crossing substrate such as Si, Ge, or GaAs, reflecting the bulk nature of the substrate. Isolation is better if adatoms are electronically similar to the substrate atoms, and can be manipulated by hydrogenation. Chain structures with group IV adatoms with two chemical bonds, or group III adatoms with one chemical bond, are semiconducting, reflecting the surface nature of the substrate. These structures are unintentionally doped due to the charge transfer across the chemical bonds. Physical properties of adatom chains have to be determined for the unified adatom-substrate system.

A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography

NASA Astrophysics Data System (ADS)

Mingyan, Yu; Shirui, Zhao; Yupeng, Jing; Yunbo, Shi; Baoqin, Chen

2014-12-01

Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1 solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of poly-methyl-methacrylate polymer resist on glass for phased array device application. This method can restrain the influence of the charging effect on the insulating substrate effectively. Experimental results show that the novel process can solve the problems of the distortion of resist patterns and electron beam main field stitching error, thus ensuring the accuracy of the stitching and overlay of the electron beam lithography system. The main characteristic of the novel process is that it is compatible to the multi-layer semiconductor process inside a clean room, and is a green process, quite simple, fast, and low cost. It can also provide a broad scope in the device development on insulating the substrate, such as high density biochips, flexible electronics and liquid crystal display screens.

RF Sputtering for preparing substantially pure amorphous silicon monohydride

DOEpatents

Jeffrey, Frank R.; Shanks, Howard R.

1982-10-12

A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

Development of a Bio-nanobattery for Distributed Power Storage Systems

NASA Technical Reports Server (NTRS)

King, Glen C.; Choi, Sang H.; Chu, Sang-Hyon; Kim, Jae-Woo; Park, Yeonjoon; Lillehei, Peter; Watt, Gerald D.; Davis, Robert; Harb, John N.

2004-01-01

Currently available power storage systems, such as those used to supply power to microelectronic devices, typically consist of a single centralized canister and a series of wires to supply electrical power to where it is needed in a circuit. As the size of electrical circuits and components become smaller, there exists a need for a distributed power system to reduce Joule heating, wiring, and to allow autonomous operation of the various functions performed by the circuit. Our research is being conducted to develop a bio-nanobattery using ferritins reconstituted with both an iron core (Fe-ferritin) and a cobalt core (Co-ferritin). Both Co-ferritin and Fe-ferritin were synthesized and characterized as candidates for the bio-nanobattery. The reducing capability was determined as well as the half-cell electrical potentials, indicating an electrical output of nearly 0.5 V for the battery cell. Ferritins having other metallic cores are also being investigated, in order to increase the overall electrical output. Two dimensional ferritin arrays were also produced on various substrates, demonstrating the necessary building blocks for the bio-nanobattery. The bio-nanobattery will play a key role in moving to a distributed power storage system for electronic applications.

High-power 0.87-micron channel substrate planar lasers for spaceborne communications

NASA Technical Reports Server (NTRS)

Connolly, J. C.; Stewart, T. R.; Gilbert, D. B.; Slavin, S. E.; Carlin, D. B.

1988-01-01

High-power single-mode channeled-substrate planar AlGaAs diode lasers are being developed for reliable high-power operation for use as sources in spaceborne optical communication systems. The CSP laser structure has been optimized for operation at an emission wavelength of 870 nm. Such devices have exhibited output powers in excess of 80 mW CW at an operating temperature of 80 C.

Electron beam recrystallization of amorphous semiconductor materials

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr.

1968-01-01

Nucleation and growth of crystalline films of silicon, germanium, and cadmium sulfide on substrates of plastic and glass were investigated. Amorphous films of germanium, silicon, and cadmium sulfide on amorphous substrates of glass and plastic were converted to the crystalline condition by electron bombardment.

Electronic characterization of silicon intercalated chevron graphene nanoribbons on Au(111)

DOE PAGES

Deniz, O.; Sánchez-Sánchez, C.; Jaafar, R.; ...

2018-01-08

Electronic and thermal properties of chevron-type graphene nanoribbons can be widely tuned, making them interesting candidates for electronic and thermoelectric applications. In this paper, we use post-growth silicon intercalation to unambiguously access nanoribbons’ energy position of their electronic frontier states. These are otherwise obscured by substrate effects when investigated directly on the growth substrate. Finally, in agreement with first-principles calculations we find a band gap of 2.4 eV.

High power density microbial fuel cell with flexible 3D graphene-nickel foam as anode

NASA Astrophysics Data System (ADS)

Wang, Hanyu; Wang, Gongming; Ling, Yichuan; Qian, Fang; Song, Yang; Lu, Xihong; Chen, Shaowei; Tong, Yexiang; Li, Yat

2013-10-01

The structure and electrical conductivity of anode play a significant role in the power generation of microbial fuel cells (MFCs). In this study, we developed a three-dimensional (3D) reduced graphene oxide-nickel (denoted as rGO-Ni) foam as an anode for MFC through controlled deposition of rGO sheets onto the nickel foam substrate. The loading amount of rGO sheets and electrode surface area can be controlled by the number of rGO loading cycles. 3D rGO-Ni foam anode provides not only a large accessible surface area for microbial colonization and electron mediators, but also a uniform macro-porous scaffold for effective mass diffusion of the culture medium. Significantly, at a steady state of the power generation, the MFC device with flexible rGO-Ni electrodes produced an optimal volumetric power density of 661 W m-3 calculated based on the volume of anode material, or 27 W m-3 based on the volume of the anode chamber. These values are substantially higher than that of plain nickel foam, and other conventional carbon based electrodes (e.g., carbon cloth, carbon felt, and carbon paper) measured in the same conditions. To our knowledge, this is the highest volumetric power density reported for mL-scale MFC device with a pure strain of Shewanella oneidensis MR-1. We also demonstrated that the MFC device can be operated effectively in a batch-mode at least for a week. These new 3D rGO-Ni electrodes show great promise for improving the power generation of MFC devices.The structure and electrical conductivity of anode play a significant role in the power generation of microbial fuel cells (MFCs). In this study, we developed a three-dimensional (3D) reduced graphene oxide-nickel (denoted as rGO-Ni) foam as an anode for MFC through controlled deposition of rGO sheets onto the nickel foam substrate. The loading amount of rGO sheets and electrode surface area can be controlled by the number of rGO loading cycles. 3D rGO-Ni foam anode provides not only a large accessible surface area for microbial colonization and electron mediators, but also a uniform macro-porous scaffold for effective mass diffusion of the culture medium. Significantly, at a steady state of the power generation, the MFC device with flexible rGO-Ni electrodes produced an optimal volumetric power density of 661 W m-3 calculated based on the volume of anode material, or 27 W m-3 based on the volume of the anode chamber. These values are substantially higher than that of plain nickel foam, and other conventional carbon based electrodes (e.g., carbon cloth, carbon felt, and carbon paper) measured in the same conditions. To our knowledge, this is the highest volumetric power density reported for mL-scale MFC device with a pure strain of Shewanella oneidensis MR-1. We also demonstrated that the MFC device can be operated effectively in a batch-mode at least for a week. These new 3D rGO-Ni electrodes show great promise for improving the power generation of MFC devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr03487a

Interface effects in the dissolution of silicon into thin gold films

NASA Technical Reports Server (NTRS)

Sankur, H.; Mccaldin, J. O.

1975-01-01

The dissolution of crystalline Si and amorphous Si substrates into thin films of evaporated Au was studied with an electron microprobe and scanning electron microscopy. The dissolution pattern was found to be nonuniform along the plane of the surface and dependent on the crystalline orientation of the Si substrate. The dissolution is greatly facilitated when a very thin layer of Pd is evaporated between the Si substrate and the Au film.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deniz, O.; Sánchez-Sánchez, C.; Jaafar, R.

Electronic and thermal properties of chevron-type graphene nanoribbons can be widely tuned, making them interesting candidates for electronic and thermoelectric applications. In this paper, we use post-growth silicon intercalation to unambiguously access nanoribbons’ energy position of their electronic frontier states. These are otherwise obscured by substrate effects when investigated directly on the growth substrate. Finally, in agreement with first-principles calculations we find a band gap of 2.4 eV.

Oxidase catalysis via aerobically generated hypervalent iodine intermediates

NASA Astrophysics Data System (ADS)

Maity, Asim; Hyun, Sung-Min; Powers, David C.

2018-02-01

The development of sustainable oxidation chemistry demands strategies to harness O2 as a terminal oxidant. Oxidase catalysis, in which O2 serves as a chemical oxidant without necessitating incorporation of oxygen into reaction products, would allow diverse substrate functionalization chemistry to be coupled to O2 reduction. Direct O2 utilization suffers from intrinsic challenges imposed by the triplet ground state of O2 and the disparate electron inventories of four-electron O2 reduction and two-electron substrate oxidation. Here, we generate hypervalent iodine reagents—a broadly useful class of selective two-electron oxidants—from O2. This is achieved by intercepting reactive intermediates of aldehyde autoxidation to aerobically generate hypervalent iodine reagents for a broad array of substrate oxidation reactions. The use of aryl iodides as mediators of aerobic oxidation underpins an oxidase catalysis platform that couples substrate oxidation directly to O2 reduction. We anticipate that aerobically generated hypervalent iodine reagents will expand the scope of aerobic oxidation chemistry in chemical synthesis.

Highly Efficient Flexible Quantum Dot Solar Cells with Improved Electron Extraction Using MgZnO Nanocrystals.

PubMed

Zhang, Xiaoliang; Santra, Pralay Kanti; Tian, Lei; Johansson, Malin B; Rensmo, Håkan; Johansson, Erik M J

2017-08-22

Colloidal quantum dot (CQD) solar cells have high potential for realizing an efficient and lightweight energy supply for flexible or wearable electronic devices. To achieve highly efficient and flexible CQD solar cells, the electron transport layer (ETL), extracting electrons from the CQD solid layer, needs to be processed at a low-temperature and should also suppress interfacial recombination. Herein, a highly stable MgZnO nanocrystal (MZO-NC) layer is reported for efficient flexible PbS CQD solar cells. Solar cells fabricated with MZO-NC ETL give a high power conversion efficiency (PCE) of 10.4% and 9.4%, on glass and flexible plastic substrates, respectively. The reported flexible CQD solar cell has the record efficiency to date of flexible CQD solar cells. Detailed theoretical simulations and extensive characterizations reveal that the MZO-NCs significantly enhance charge extraction from CQD solids and diminish the charge accumulation at the ETL/CQD interface, suppressing charge interfacial recombination. These important results suggest that the low-temperature processed MZO-NCs are very promising for use in efficient flexible solar cells or other flexible optoelectronic devices.

Ultrathin and lightweight organic solar cells with high flexibility

PubMed Central

Kaltenbrunner, Martin; White, Matthew S.; Głowacki, Eric D.; Sekitani, Tsuyoshi; Someya, Takao; Sariciftci, Niyazi Serdar; Bauer, Siegfried

2012-01-01

Application-specific requirements for future lighting, displays and photovoltaics will include large-area, low-weight and mechanical resilience for dual-purpose uses such as electronic skin, textiles and surface conforming foils. Here we demonstrate polymer-based photovoltaic devices on plastic foil substrates less than 2 μm thick, with equal power conversion efficiency to their glass-based counterparts. They can reversibly withstand extreme mechanical deformation and have unprecedented solar cell-specific weight. Instead of a single bend, we form a random network of folds within the device area. The processing methods are standard, so the same weight and flexibility should be achievable in light emitting diodes, capacitors and transistors to fully realize ultrathin organic electronics. These ultrathin organic solar cells are over ten times thinner, lighter and more flexible than any other solar cell of any technology to date. PMID:22473014

High-Temperature High-Power Packaging Techniques for HEV Traction Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elshabini, Aicha; Barlow, Fred D.

A key issue associated with the wider adoption of hybrid-electric vehicles (HEV) and plug in hybrid-electric vehicles (PHEV) is the implementation of the power electronic systems that are required in these products. One of the primary industry goals is the reduction in the price of these vehicles relative to the cost of traditional gasoline powered vehicles. Today these systems, such as the Prius, utilize one coolant loop for the engine at approximately 100 C coolant temperatures, and a second coolant loop for the inverter at 65 C. One way in which significant cost reduction of these systems could be achievedmore » is through the use of a single coolant loop for both the power electronics as well as the internal combustion engine (ICE). This change in coolant temperature significantly increases the junction temperatures of the devices and creates a number of challenges for both device fabrication and the assembly of these devices into inverters and converters for HEV and PHEV applications. Traditional power modules and the state-of-the-art inverters in the current HEV products, are based on chip and wire assembly and direct bond copper (DBC) on ceramic substrates. While a shift to silicon carbide (SiC) devices from silicon (Si) devices would allow the higher operating temperatures required for a single coolant loop, it also creates a number of challenges for the assembly of these devices into power inverters. While this traditional packaging technology can be extended to higher temperatures, the key issues are the substrate material and conductor stability, die bonding material, wire bonds, and bond metallurgy reliability as well as encapsulation materials that are stable at high operating temperatures. The larger temperature differential during power cycling, which would be created by higher coolant temperatures, places tremendous stress on traditional aluminum wire bonds that are used to interconnect power devices. Selection of the bond metallurgy and wire bond geometry can play a key role in mitigating this stress. An alternative solution would be to eliminate the wire bonds completely through a fundamentally different method of forming a reliable top side interconnect. Similarly, the solders used in most power modules exhibit too low of a liquidus to be viable solutions for maximum junction temperatures of 200 C. Commonly used encapsulation materials, such as silicone gels, also suffer from an inability to operate at 200 C for extended periods of time. Possible solutions to these problems exist in most cases but require changes to the traditional manufacturing process used in these modules. In addition, a number of emerging technologies such as Si nitride, flip-chip assembly methods, and the elimination of base-plates would allow reliable module development for operation of HEV and PHEV inverters at elevated junction temperatures.« less

Powder-in-tube and thick-film methods of fabricating high temperature superconductors having enhanced biaxial texture

DOEpatents

Goyal, Amit; Kroeger, Donald M.

2003-11-11

A method for forming an electronically active biaxially textured article includes the steps of providing a substrate having a single crystal metal or metal alloy surface, deforming the substrate to form an elongated substrate surface having biaxial texture and depositing an epitaxial electronically active layer on the biaxially textured surface. The method can include at least one annealing step after the deforming step to produce the biaxially textured substrate surface. The invention can be used to form improved biaxially textured articles, such as superconducting wire and tape articles having improved J.sub.c values.

Interfacial electronic structures revealed at the rubrene/CH3NH3PbI3 interface.

PubMed

Ji, Gengwu; Zheng, Guanhaojie; Zhao, Bin; Song, Fei; Zhang, Xiaonan; Shen, Kongchao; Yang, Yingguo; Xiong, Yimin; Gao, Xingyu; Cao, Liang; Qi, Dong-Chen

2017-03-01

The electronic structures of rubrene films deposited on CH 3 NH 3 PbI 3 perovskite have been investigated using in situ ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). It was found that rubrene molecules interacted weakly with the perovskite substrate. Due to charge redistribution at their interface, a downward 'band bending'-like energy shift of ∼0.3 eV and an upward band bending of ∼0.1 eV were identified at the upper rubrene side and the CH 3 NH 3 PbI 3 substrate side, respectively. After the energy level alignment was established at the rubrene/CH 3 NH 3 PbI 3 interface, its highest occupied molecular orbital (HOMO)-valence band maximum (VBM) offset was found to be as low as ∼0.1 eV favoring the hole extraction with its lowest unoccupied molecular orbital (LUMO)-conduction band minimum (CBM) offset as large as ∼1.4 eV effectively blocking the undesired electron transfer from perovskite to rubrene. As a demonstration, simple inverted planar solar cell devices incorporating rubrene and rubrene/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hole transport layers (HTLs) were fabricated in this work and yielded a champion power conversion efficiency of 8.76% and 13.52%, respectively. Thus, the present work suggests that a rubrene thin film could serve as a promising hole transport layer for efficient perovskite-based solar cells.

Dark-field image contrast in transmission scanning electron microscopy: Effects of substrate thickness and detector collection angle.

PubMed

Woehl, Taylor; Keller, Robert

2016-12-01

An annular dark field (ADF) detector was placed beneath a specimen in a field emission scanning electron microscope operated at 30kV to calibrate detector response to incident beam current, and to create transmission images of gold nanoparticles on silicon nitride (SiN) substrates of various thicknesses. Based on the linear response of the ADF detector diodes to beam current, we developed a method that allowed for direct determination of the percentage of that beam current forward scattered to the ADF detector from the sample, i.e. the transmitted electron (TE) yield. Collection angles for the ADF detector region were defined using a masking aperture above the detector and were systematically varied by changing the sample to detector distance. We found the contrast of the nanoparticles, relative to the SiN substrate, decreased monotonically with decreasing inner exclusion angle and increasing substrate thickness. We also performed Monte Carlo electron scattering simulations, which showed quantitative agreement with experimental contrast associated with the nanoparticles. Together, the experiments and Monte Carlo simulations revealed that the decrease in contrast with decreasing inner exclusion angle was due to a rapid increase in the TE yield of the low atomic number substrate. Nanoparticles imaged at low inner exclusion angles (<150mrad) and on thick substrates (>50nm) showed low image contrast in their centers surrounded by a bright high-contrast halo on their edges. This complex image contrast was predicted by Monte Carlo simulations, which we interpreted in terms of mixing of the nominally bright field (BF) and ADF electron signals. Our systematic investigation of inner exclusion angle and substrate thickness effects on ADF t-SEM imaging provides fundamental understanding of the contrast mechanisms for image formation, which in turn suggest practical limitations and optimal imaging conditions for different substrate thicknesses. Copyright © 2016. Published by Elsevier B.V.

Hot electron generation by aluminum oligomers in plasmonic ultraviolet photodetectors.

PubMed

Ahmadivand, Arash; Sinha, Raju; Vabbina, Phani Kiran; Karabiyik, Mustafa; Kaya, Serkan; Pala, Nezih

2016-06-13

We report on an integrated plasmonic ultraviolet (UV) photodetector composed of aluminum Fano-resonant heptamer nanoantennas deposited on a Gallium Nitride (GaN) active layer which is grown on a sapphire substrate to generate significant photocurrent via formation of hot electrons by nanoclusters upon the decay of nonequilibrium plasmons. Using the plasmon hybridization theory and finite-difference time-domain (FDTD) method, it is shown that the generation of hot carriers by metallic clusters illuminated by UV beam leads to a large photocurrent. The induced Fano resonance (FR) minimum across the UV spectrum allows for noticeable enhancement in the absorption of optical power yielding a plasmonic UV photodetector with a high responsivity. It is also shown that varying the thickness of the oxide layer (Al₂O₃) around the nanodisks (tox) in a heptamer assembly adjusted the generated photocurrent and responsivity. The proposed plasmonic structure opens new horizons for designing and fabricating efficient opto-electronics devices with high gain and responsivity.

Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zhu-Jun; Dong, Jichen; Cui, Yi

In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene graphene and graphene substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy andmore » density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite.« less

Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

DOE PAGES

Wang, Zhu-Jun; Dong, Jichen; Cui, Yi; ...

2016-10-19

In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene graphene and graphene substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy andmore » density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite.« less

Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

PubMed Central

Wang, Zhu-Jun; Dong, Jichen; Cui, Yi; Eres, Gyula; Timpe, Olaf; Fu, Qiang; Ding, Feng; Schloegl, R.; Willinger, Marc-Georg

2016-01-01

In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene–graphene and graphene–substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite. PMID:27759024

Integrated electrochemical treatment systems for facilitating the bioremediation of oil spill contaminated soil.

PubMed

Cheng, Ying; Wang, Liang; Faustorilla, Vilma; Megharaj, Mallavarapu; Naidu, Ravi; Chen, Zuliang

2017-05-01

Bioremediation plays an important role in oil spill management and bio-electrochemical treatment systems are supposed to represent a new technology for both effective remediation and energy recovery. Diesel removal rate increased by four times in microbial fuel cells (MFCs) since the electrode served as an electron acceptor, and high power density (29.05 W m -3 ) at current density 72.38 A m -3 was achieved using diesel (v/v 1%) as the sole substrate. As revealed by Scanning electron microscope images, carbon fibres in the anode electrode were covered with biofilm and the bacterial colloids which build the link between carbon fibres and enhance electron transmission. Trace metabolites produced during the anaerobic biodegradation were identified by gas chromatography-mass spectrometry. These metabolites may act as emulsifying agents that benefit oil dispersion and play a vital role in bioremediation of oil spills in field applications. Copyright © 2017 Elsevier Ltd. All rights reserved.

Review of Batteryless Wireless Sensors Using Additively Manufactured Microwave Resonators.

PubMed

Memon, Muhammad Usman; Lim, Sungjoon

2017-09-09

The significant improvements observed in the field of bulk-production of printed microchip technologies in the past decade have allowed the fabrication of microchip printing on numerous materials including organic and flexible substrates. Printed sensors and electronics are of significant interest owing to the fast and low-cost fabrication techniques used in their fabrication. The increasing amount of research and deployment of specially printed electronic sensors in a number of applications demonstrates the immense attention paid by researchers to this topic in the pursuit of achieving wider-scale electronics on different dielectric materials. Although there are many traditional methods for fabricating radio frequency (RF) components, they are time-consuming, expensive, complicated, and require more power for operation than additive fabrication methods. This paper serves as a summary/review of improvements made to the additive printing technologies. The article focuses on three recently developed printing methods for the fabrication of wireless sensors operating at microwave frequencies. The fabrication methods discussed include inkjet printing, three-dimensional (3D) printing, and screen printing.

Review of Batteryless Wireless Sensors Using Additively Manufactured Microwave Resonators

PubMed Central

2017-01-01

The significant improvements observed in the field of bulk-production of printed microchip technologies in the past decade have allowed the fabrication of microchip printing on numerous materials including organic and flexible substrates. Printed sensors and electronics are of significant interest owing to the fast and low-cost fabrication techniques used in their fabrication. The increasing amount of research and deployment of specially printed electronic sensors in a number of applications demonstrates the immense attention paid by researchers to this topic in the pursuit of achieving wider-scale electronics on different dielectric materials. Although there are many traditional methods for fabricating radio frequency (RF) components, they are time-consuming, expensive, complicated, and require more power for operation than additive fabrication methods. This paper serves as a summary/review of improvements made to the additive printing technologies. The article focuses on three recently developed printing methods for the fabrication of wireless sensors operating at microwave frequencies. The fabrication methods discussed include inkjet printing, three-dimensional (3D) printing, and screen printing. PMID:28891947

Influence of electron beam irradiation on nonlinear optical properties of Al doped ZnO thin films for optoelectronic device applications in the cw laser regime

NASA Astrophysics Data System (ADS)

Antony, Albin; Pramodini, S.; Poornesh, P.; Kityk, I. V.; Fedorchuk, A. O.; Sanjeev, Ganesh

2016-12-01

We present the studies on third-order nonlinear optical properties of Al doped ZnO thin films irradiated with electron beam at different dose rate. Al doped ZnO thin films were deposited on a glass substrate by spray pyrolysis deposition technique. The thin films were irradiated using the 8 MeV electron beam from microtron ranging from 1 kG y to 5 kG y. Nonlinear optical studies were carried out by employing the single beam Z-scan technique to determine the sign and magnitude of absorptive and refractive nonlinearities of the irradiated thin films. Continuous wave He-Ne laser operating at 633 nm was used as source of excitation. The open aperture Z-scan measurements indicated the sample displays reverse saturable absorption (RSA) process. The negative sign of the nonlinear refractive index n2 was noted from the closed aperture Z-scan measurements indicates, the films exhibit self-defocusing property due to thermal nonlinearity. The third-order nonlinear optical susceptibility χ(3) varies from 8.17 × 10-5 esu to 1.39 × 10-3 esu with increase in electron beam irradiation. The present study reveals that the irradiation of electron beam leads to significant changes in the third-order optical nonlinearity. Al doped ZnO displays good optical power handling capability with optical clamping of about ∼5 mW. The irradiation study endorses that the Al doped ZnO under investigation is a promising candidate photonic device applications such as all-optical power limiting.

Substrate preparation effects on defect density in molecular beam epitaxial growth of CdTe on CdTe (100) and (211)B

DOE PAGES

Burton, George L.; Diercks, David R.; Perkins, Craig L.; ...

2017-07-01

Recent studies have demonstrated that growth of CdTe on CdTe (100) and (211)B substrates via molecular beam epitaxy (MBE) results in planar defect densities 2 and 3 orders of magnitude higher than growth on InSb (100) substrates, respectively. To understand this shortcoming, MBE growth on CdTe substrates with a variety of substrate preparation methods is studied by scanning electron microscopy, secondary ion mass spectrometry, x-ray photoelectron spectroscopy, cross sectional transmission electron microscopy, and atom probe tomography (APT). Prior to growth, carbon is shown to remain on substrate surfaces even after atomic hydrogen cleaning. APT revealed that following the growth ofmore » films, trace amounts of carbon remained at the substrate/film interface. This residual carbon may lead to structural degradation, which was determined as the main cause of higher defect density.« less

Optimization of flexible substrate by gradient elastic modulus design for performance improvement of flexible electronic devices

NASA Astrophysics Data System (ADS)

Xia, Minggang; Liang, Chunping; Hu, Ruixue; Cheng, Zhaofang; Liu, Shiru; Zhang, Shengli

2018-05-01

It is imperative and highly desirable to buffer the stress in flexible electronic devices. In this study, we designed and fabricated lamellate poly(dimethylsiloxane) (PDMS) samples with gradient elastic moduli, motivated by the protection of the pomelo pulp by its skin, followed by the measurements of their elastic moduli. We demonstrated that the electrical and fatigue performances of a Ag-nanowire thin film device on the PDMS substrate with a gradient elastic modulus are significantly better than those of a device on a substrate with a monolayer PDMS. This study provides a robust scheme to effectively protect flexible electronic devices.

Stretchable metal oxide thin film transistors on engineered substrate for electronic skin applications.

PubMed

Romeo, Alessia; Lacour, Stphanie P

2015-08-01

Electronic skins aim at providing distributed sensing and computation in a large-area and elastic membrane. Control and addressing of high-density soft sensors will be achieved when thin film transistor matrices are also integrated in the soft carrier substrate. Here, we report on the design, manufacturing and characterization of metal oxide thin film transistors on these stretchable substrates. The TFTs are integrated onto an engineered silicone substrate with embedded strain relief to protect the devices from catastrophic cracking. The TFT stack is composed of an amorphous In-Ga-Zn-O active layer, a hybrid AlxOy/Parylene dielectric film, gold electrodes and interconnects. All layers are prepared and patterned with planar, low temperature and dry processing. We demonstrate the interconnected IGZO TFTs sustain applied tensile strain up to 20% without electrical degradation and mechanical fracture. Active devices are critical for distributed sensing. The compatibility of IGZO TFTs with soft and biocompatible substrates is an encouraging step towards wearable electronic skins.

Electronic structure of BaO/W cathode surfaces

NASA Technical Reports Server (NTRS)

Muller, Wolfgang

1989-01-01

The local electronic structure of the emissive layer of barium dispenser thermionic cathodes is investigated theoretically using the relativistic scattered-wave approach. The interaction of Ba and O with W, Os, and W-Os alloy surfaces is studied with atomic clusters modeling different absorption environments representative of B- and M-type cathodes. Ba is found to be strongly oxidized, while O and the metal substrate are in a reduced chemical state. The presence of O enhances the surface dipole and Ba binding energy relative to Ba on W. Model results for W-Os alloy substrates show only relatively small changes in Ba and O for identical geometries, but very large charge redistributions inside the substrate, which are attributed to the electronegativity difference between Os and W. If Os is present in the surface layer, the charge transfer from Ba to the substrate and the Ba binding energy increase relative to W. Explanations are offered for the improved electron emission from alloy surfaces and the different emission enhancement for different alloy substrates.

Organic photochemical storage of solar energy. Progress report, July 1, 1977--Feburary 28, 1978

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jones, G. II

1978-03-01

The prospects for driving endoergic reactions of simple, relatively abundant organic chemicals by photochemical means have been examined. Strategies for utilization of light of varying wavelength involve sensitization mechanisms which depend on the redox properties of energy storing substrates and photosensitizers. Of principal interest is valence isomerization which can be induced by electron donor-acceptor interaction between substrate and sensitizer in an excited complex or exciplex. Photophysical studies show that potentially isomerizable substrates efficiently intercept redox photosensitizers. The quenching of emission of electron acceptor sensitizers by non conjugated hydrocarbon dienes is indeed a function of the reduction potential of the acceptorsmore » (a series of aromatics with varying absorption characteristics) and the oxidation potentials of the substrates. Electron deficient dienes have been shown alternatively to be efficient quenchers of excited donor sensitizers. That exciplexes are formed between isomerizable substrates and donor or acceptor sensitizers has been confirmed by emission spectroscopy. The rearrangement of hexamethyldewarbenzene, a model exciplex isomerization has been examined in some detail.« less

Organic substrates as electron donors in permeable reactive barriers for removal of heavy metals from acid mine drainage.

PubMed

Kijjanapanich, P; Pakdeerattanamint, K; Lens, P N L; Annachhatre, A P

2012-12-01

This research was conducted to select suitable natural organic substrates as potential carbon sources for use as electron donors for biological sulphate reduction in a permeable reactive barrier (PRB). A number of organic substrates were assessed through batch and continuous column experiments under anaerobic conditions with acid mine drainage (AMD) obtained from an abandoned lignite coal mine. To keep the heavy metal concentration at a constant level, the AMD was supplemented with heavy metals whenever necessary. Under anaerobic conditions, sulphate-reducing bacteria (SRB) converted sulphate into sulphide using the organic substrates as electron donors. The sulphide that was generated precipitated heavy metals as metal sulphides. Organic substrates, which yielded the highest sulphate reduction in batch tests, were selected for continuous column experiments which lasted over 200 days. A mixture of pig-farm wastewater treatment sludge, rice husk and coconut husk chips yielded the best heavy metal (Fe, Cu, Zn and Mn) removal efficiencies of over 90%.

A photosynthetic-plasmonic-voltaic cell: Excitation of photosynthetic bacteria and current collection through a plasmonic substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samsonoff, Nathan; Ooms, Matthew D.; Sinton, David

2014-01-27

Excitation of photosynthetic biofilms using surface-confined evanescent light fields enables energy dense photobioreactors, while electrode-adhered biofilms can provide electricity directly. Here, we demonstrate concurrent light delivery and electron transport through a plasmonically excited metal film. Biofilms of cyanobacterium Synechococcus bacillaris on 50-nm gold films are excited via the Kretschmann configuration at λ = 670 nm. Cells show light/dark response to plasmonic excitation and grow denser biofilms, closer to the electrode surface, as compared to the direct irradiated case. Directly irradiated biofilms produced average electrical powers of 5.7 μW/m{sup 2} and plasmonically excited biofilms produced average electrical powers of 5.8 μW/m{sup 2}, with individual biofilmsmore » producing as much as 12 μW/m{sup 2}.« less

Microwave integrated circuits for space applications

NASA Technical Reports Server (NTRS)

Leonard, Regis F.; Romanofsky, Robert R.

1991-01-01

Monolithic microwave integrated circuits (MMIC), which incorporate all the elements of a microwave circuit on a single semiconductor substrate, offer the potential for drastic reductions in circuit weight and volume and increased reliability, all of which make many new concepts in electronic circuitry for space applications feasible, including phased array antennas. NASA has undertaken an extensive program aimed at development of MMICs for space applications. The first such circuits targeted for development were an extension of work in hybrid (discrete component) technology in support of the Advanced Communication Technology Satellite (ACTS). It focused on power amplifiers, receivers, and switches at ACTS frequencies. More recent work, however, focused on frequencies appropriate for other NASA programs and emphasizes advanced materials in an effort to enhance efficiency, power handling capability, and frequency of operation or noise figure to meet the requirements of space systems.