Modular power converter having fluid cooled support

DOEpatents

Beihoff, Bruce C.; Radosevich, Lawrence D.; Meyer, Andreas A.; Gollhardt, Neil; Kannenberg, Daniel G.

2005-12-06

A support may receive one or more power electronic circuits. The support may aid in removing heat from the circuits through fluid circulating through the support. The support, in conjunction with other packaging features may form a shield from both external EMI/RFI and from interference generated by operation of the power electronic circuits. Features may be provided to permit and enhance connection of the circuitry to external circuitry, such as improved terminal configurations. Modular units may be assembled that may be coupled to electronic circuitry via plug-in arrangements or through interface with a backplane or similar mounting and interconnecting structures.

A multi-channel isolated power supply in non-equipotential circuit

NASA Astrophysics Data System (ADS)

Li, Xiang; Zhao, Bo-Wen; Zhang, Yan-Chi; Xie, Da

2018-04-01

A multi-channel isolation power supply is designed for the problems of different MOSFET or IGBT in the non-equipotential circuit in this paper. It mainly includes the square wave generation circuit, the high-frequency transformer and the three-terminal stabilized circuit. The first part is used to generate the 24V square wave, and as the input of the magnetic ring transformer. In the second part, the magnetic ring transformer consists of one input and three outputs to realize multi-channel isolation output. The third part can output different potential and realize non-equal potential function through the three-terminal stabilized chip. In addition, the multi-channel isolation power source proposed in this paper is Small size, high reliability and low price, and it is convenient for power electronic switches that operate on multiple different potentials. Therefore, the research on power supply of power electronic circuit has practical significance.

Compact self-powered synchronous energy extraction circuit design with enhanced performance

NASA Astrophysics Data System (ADS)

Liu, Weiqun; Zhao, Caiyou; Badel, Adrien; Formosa, Fabien; Zhu, Qiao; Hu, Guangdi

2018-04-01

Synchronous switching circuit is viewed as an effective solution of enhancing the generator’s performance and providing better adaptability for load variations. A critical issue for these synchronous switching circuits is the self-powered realization. In contrast with other methods, the electronic breaker possesses the advantage of simplicity and reliability. However, beside the energy consumption of the electronic breakers, the parasitic capacitance decreases the available piezoelectric voltage. In this technical note, a new compact design of the self-powered switching circuit using electronic breaker is proposed. The envelope diodes are excluded and only a single envelope capacitor is used. The parasitic capacitance is reduced to half with boosted performance while the components are reduced with cost saved.

Cooled electrical terminal assembly and device incorporating same

DOEpatents

Beihoff, Bruce C.; Radosevich, Lawrence D.; Phillips, Mark G.; Kehl, Dennis L.; Kaishian, Steven C.; Kannenberg, Daniel G.

2006-08-22

A terminal structure provides interfacing with power electronics circuitry and external circuitry. The thermal support may receive one or more power electronic circuits. The support may aid in removing heat from the terminal structure and the circuits through fluid circulating through the support. The support may form a shield from both external EMI/RFI and from interference generated by operation of the power electronic circuits. Features may be provided to permit and enhance connection of the circuitry to external circuitry, such as improved terminal configurations. Modular units may be assembled that may be coupled to electronic circuitry via plug-in arrangements or through interface with a backplane or similar mounting and interconnecting structures.

Cooled electrical terminal assembly and device incorporating same

DOEpatents

Beihoff, Bruce C.; Radosevich, Lawrence D.; Phillips, Mark G.; Kehl, Dennis L.; Kaishian, Steven C.; Kannenberg, Daniel G.

2005-05-24

A terminal structure provides interfacing with power electronics circuitry and external circuitry. The thermal support may receive one or more power electronic circuits. The support may aid in removing heat from the terminal structure and the circuits through fluid circulating through the support. The support may form a shield from both external EMI/RFI and from interference generated by operation of the power electronic circuits. Features may be provided to permit and enhance connection of the circuitry to external circuitry, such as improved terminal configurations. Modular units may be assembled that may be coupled to electronic circuitry via plug-in arrangements or through interface with a backplane or similar mounting and interconnecting structures.

Analysis and Design of Power Factor Pre-Regulator Based on a Symmetrical Charge Pump Circuit Applied to Electronic Ballast

NASA Astrophysics Data System (ADS)

Lazcano Olea, Miguel; Ramos Astudillo, Reynaldo; Sanhueza Robles, René; Rodriguez Rubke, Leopoldo; Ruiz-Caballero, Domingo Antonio

This paper presents the analysis and design of a power factor pre-regulator based on a symmetrical charge pump circuit applied to electronic ballast. The operation stages of the circuit are analyzed and its main design equations are obtained. Simulation and experimental results are presented in order to show the design methodology feasibility.

Radiation damage in MOS integrated circuits, Part 1

NASA Technical Reports Server (NTRS)

Danchenko, V.

1971-01-01

Complementary and p-channel MOS integrated circuits made by four commercial manufacturers were investigated for sensitivity to radiation environment. The circuits were irradiated with 1.5 MeV electrons. The results are given for electrons and for the Co-60 gamma radiation equivalent. The data are presented in terms of shifts in the threshold potentials and changes in transconductances and leakages. Gate biases of -10V, +10V and zero volts were applied to individual MOS units during irradiation. It was found that, in most of circuits of complementary MOS technologies, noticable changes due to radiation appear first as increased leakage in n-channel MOSFETs somewhat before a total integrated dose 10 to the 12th power electrons/sg cm is reached. The inability of p-channel MOSFETs to turn on sets in at about 10 to the 13th power electrons/sq cm. Of the circuits tested, an RCA A-series circuit was the most radiation resistant sample.

AIN-Based Packaging for SiC High-Temperature Electronics

NASA Technical Reports Server (NTRS)

Savrun, Ender

2004-01-01

Packaging made primarily of aluminum nitride has been developed to enclose silicon carbide-based integrated circuits (ICs), including circuits containing SiC-based power diodes, that are capable of operation under conditions more severe than can be withstood by silicon-based integrated circuits. A major objective of this development was to enable packaged SiC electronic circuits to operate continuously at temperatures up to 500 C. AlN-packaged SiC electronic circuits have commercial potential for incorporation into high-power electronic equipment and into sensors that must withstand high temperatures and/or high pressures in diverse applications that include exploration in outer space, well logging, and monitoring of nuclear power systems. This packaging embodies concepts drawn from flip-chip packaging of silicon-based integrated circuits. One or more SiC-based circuit chips are mounted on an aluminum nitride package substrate or sandwiched between two such substrates. Intimate electrical connections between metal conductors on the chip(s) and the metal conductors on external circuits are made by direct bonding to interconnections on the package substrate(s) and/or by use of holes through the package substrate(s). This approach eliminates the need for wire bonds, which have been the most vulnerable links in conventional electronic circuitry in hostile environments. Moreover, the elimination of wire bonds makes it possible to pack chips more densely than was previously possible.

Electrical power converter method and system employing multiple output converters

DOEpatents

Beihoff, Bruce C [Wauwatosa, WI; Radosevich, Lawrence D [Muskego, WI; Meyer, Andreas A [Richmond Heights, OH; Gollhardt, Neil [Fox Point, WI; Kannenberg, Daniel G [Waukesha, WI

2007-05-01

A support may receive one or more power electronic circuits. The support may aid in removing heat from the circuits through fluid circulating through the support. The support, in conjunction with other packaging features may form a shield from both external EMI/RFI and from interference generated by operation of the power electronic circuits. Features may be provided to permit and enhance connection of the circuitry to external circuitry, such as improved terminal configurations. Modular units may be assembled that may be coupled to electronic circuitry via plug-in arrangements or through interface with a backplane or similar mounting and interconnecting structures.

Electrical power converter method and system employing multiple-output converters

DOEpatents

Beihoff, Bruce C.; Radosevich, Lawrence D.; Meyer, Andreas A.; Gollhardt, Neil; Kannenberg, Daniel G.

2006-03-21

A support may receive one or more power electronic circuits. The support may aid in removing heat from the circuits through fluid circulating through the support. The support, in conjunction with other packaging features may form a shield from both external EMI/RFI and from interference generated by operation of the power electronic circuits. Features may be provided to permit and enhance connection of the circuitry to external circuitry, such as improved terminal configurations. Modular units may be assembled that may be coupled to electronic circuitry via plug-in arrangements or through interface with a backplane or similar mounting and interconnecting structures.

Maximum Acceleration Recording Circuit

NASA Technical Reports Server (NTRS)

Bozeman, Richard J., Jr.

1995-01-01

Coarsely digitized maximum levels recorded in blown fuses. Circuit feeds power to accelerometer and makes nonvolatile record of maximum level to which output of accelerometer rises during measurement interval. In comparison with inertia-type single-preset-trip-point mechanical maximum-acceleration-recording devices, circuit weighs less, occupies less space, and records accelerations within narrower bands of uncertainty. In comparison with prior electronic data-acquisition systems designed for same purpose, circuit simpler, less bulky, consumes less power, costs and analysis of data recorded in magnetic or electronic memory devices. Circuit used, for example, to record accelerations to which commodities subjected during transportation on trucks.

Compact vehicle drive module having improved thermal control

DOEpatents

Meyer, Andreas A.; Radosevich, Lawrence D.; Beihoff, Bruce C.; Kehl, Dennis L.; Kannenberg, Daniel G.

2006-01-03

An electric vehicle drive includes a thermal support may receive one or more power electronic circuits. The support may aid in removing heat from the circuits through fluid circulating through the support, which may be controlled in a closed-loop manner. Interfacing between circuits, circuit mounting structure, and the support provide for greatly enhanced cooling. The support may form a shield from both external EMI/RFI and from interference generated by operation of the power electronic circuits. Features may be provided to permit and enhance connection of the circuitry to external circuitry, such as improved terminal configurations. Modular units may be assembled that may be coupled to electronic circuitry via plug-in arrangements or through interface with a backplane or similar mounting and interconnecting structures.

Evolutionary Technique for Automated Synthesis of Electronic Circuits

NASA Technical Reports Server (NTRS)

Stoica, Adrian (Inventor); Salazar-Lazaro, Carlos Harold (Inventor)

2007-01-01

An evolvable circuit includes a plurality of reconfigurable switches, a plurality of transistors within a region of the circuit, the plurality of transistors having terminals, the plurality of transistors being coupled between a power source terminal and a power sink terminal so as to be capable of admitting power between the power source terminal and the power sink terminal, the plurality of transistors being coupled so that every transistor to transistor terminal coupling within the region of the circuit comprises a reconfigurable switch.

Small, Optically-Driven Power Source

NASA Technical Reports Server (NTRS)

Cockrum, Richard H.; Wang, Ke-Li J.

1988-01-01

Power transmitted along fiber-optic cables. Transmitted as infrared light along fiber-optic cable, converted to electricity to supply small electronic circuit. Power source and circuit remains electrically isolated from each other for safety or reduces electromagnetic interference. Array of diodes made by standard integrated-circuit techniques and packaged for mounting at end of fiber-optic cable.

High power ferrite microwave switch

NASA Technical Reports Server (NTRS)

Bardash, I.; Roschak, N. K.

1975-01-01

A high power ferrite microwave switch was developed along with associated electronic driver circuits for operation in a spaceborne high power microwave transmitter in geostationary orbit. Three units were built and tested in a space environment to demonstrate conformance to the required performance characteristics. Each unit consisted of an input magic-tee hybrid, two non-reciprocal latching ferrite phase shifters, an out short-slot 3 db quadrature coupler, a dual driver electronic circuit, and input logic interface circuitry. The basic mode of operation of the high power ferrite microwave switch is identical to that of a four-port, differential phase shift, switchable circulator. By appropriately designing the phase shifters and electronic driver circuits to operate in the flux-transfer magnetization mode, power and temperature insensitive operation was achieved. A list of the realized characteristics of the developed units is given.

Chip-integrated optical power limiter based on an all-passive micro-ring resonator

NASA Astrophysics Data System (ADS)

Yan, Siqi; Dong, Jianji; Zheng, Aoling; Zhang, Xinliang

2014-10-01

Recent progress in silicon nanophotonics has dramatically advanced the possible realization of large-scale on-chip optical interconnects integration. Adopting photons as information carriers can break the performance bottleneck of electronic integrated circuit such as serious thermal losses and poor process rates. However, in integrated photonics circuits, few reported work can impose an upper limit of optical power therefore prevent the optical device from harm caused by high power. In this study, we experimentally demonstrate a feasible integrated scheme based on a single all-passive micro-ring resonator to realize the optical power limitation which has a similar function of current limiting circuit in electronics. Besides, we analyze the performance of optical power limiter at various signal bit rates. The results show that the proposed device can limit the signal power effectively at a bit rate up to 20 Gbit/s without deteriorating the signal. Meanwhile, this ultra-compact silicon device can be completely compatible with the electronic technology (typically complementary metal-oxide semiconductor technology), which may pave the way of very large scale integrated photonic circuits for all-optical information processors and artificial intelligence systems.

AIN-Coated Al(2)O(3) Substrates For Electronic Circuits

NASA Technical Reports Server (NTRS)

Kolawa, Elzbieta; Lowry, Lynn; Herman, Martin; Lee, Karen

1996-01-01

Type of improved ceramic substrate for high-frequency, high-power electronic circuits combines relatively high thermal conductivity of aluminum nitride with surface smoothness of alumina. Consists of 15-micrometer layer of AIN deposited on highly polished alumina. Used for packaging millimeter-wave gallium arsenide transmitter chips, power silicon chips, and like.

Molecular interfaces for plasmonic hot electron photovoltaics

NASA Astrophysics Data System (ADS)

Pelayo García de Arquer, F.; Mihi, Agustín; Konstantatos, Gerasimos

2015-01-01

The use of self-assembled monolayers (SAMs) to improve and tailor the photovoltaic performance of plasmonic hot-electron Schottky solar cells is presented. SAMs allow the simultaneous control of open-circuit voltage, hot-electron injection and short-circuit current. To that end, a plurality of molecule structural parameters can be adjusted: SAM molecule's length can be adjusted to control plasmonic hot electron injection. Modifying SAMs dipole moment allows for a precise tuning of the open-circuit voltage. The functionalization of the SAM can also be selected to modify short-circuit current. This allows the simultaneous achievement of high open-circuit voltages (0.56 V) and fill-factors (0.58), IPCE above 5% at the plasmon resonance and maximum power-conversion efficiencies of 0.11%, record for this class of devices.The use of self-assembled monolayers (SAMs) to improve and tailor the photovoltaic performance of plasmonic hot-electron Schottky solar cells is presented. SAMs allow the simultaneous control of open-circuit voltage, hot-electron injection and short-circuit current. To that end, a plurality of molecule structural parameters can be adjusted: SAM molecule's length can be adjusted to control plasmonic hot electron injection. Modifying SAMs dipole moment allows for a precise tuning of the open-circuit voltage. The functionalization of the SAM can also be selected to modify short-circuit current. This allows the simultaneous achievement of high open-circuit voltages (0.56 V) and fill-factors (0.58), IPCE above 5% at the plasmon resonance and maximum power-conversion efficiencies of 0.11%, record for this class of devices. Electronic supplementary information (ESI) available: Contact-potential differentiometry measurements, FTIR characterization, performance statistics and gold devices. See DOI: 10.1039/c4nr06356b

Reliability Assessment of Critical Electronic Components

DTIC Science & Technology

1992-07-01

Failures FLHP - Full Horse Power FSN - Federal Stock Number I Current IC - Integrated Circuit IPB - Illustrated Parts Breakdown K - Boltzmans Constant L...Classified P - Power PC - Printed Circuit PCB - Printed Circuit Board PGA - Pin Grid Array PPM - Parts Per Million PWB - Printed Wiring Board 0...4-59 4.4.3.2.3 Circuit Brcakers ......................................................... 4-59 4.4.3.2.4 Thermal

High power and ultra-low-noise photodetector for squeezed-light enhanced gravitational wave detectors.

PubMed

Grote, Hartmut; Weinert, Michael; Adhikari, Rana X; Affeldt, Christoph; Kringel, Volker; Leong, Jonathan; Lough, James; Lück, Harald; Schreiber, Emil; Strain, Kenneth A; Vahlbruch, Henning; Wittel, Holger

2016-09-05

Current laser-interferometric gravitational wave detectors employ a self-homodyne readout scheme where a comparatively large light power (5-50 mW) is detected per photosensitive element. For best sensitivity to gravitational waves, signal levels as low as the quantum shot noise have to be measured as accurately as possible. The electronic noise of the detection circuit can produce a relevant limit to this accuracy, in particular when squeezed states of light are used to reduce the quantum noise. We present a new electronic circuit design reducing the electronic noise of the photodetection circuit in the audio band. In the application of this circuit at the gravitational-wave detector GEO 600 the shot-noise to electronic noise ratio was permanently improved by a factor of more than 4 above 1 kHz, while the dynamic range was improved by a factor of 7. The noise equivalent photocurrent of the implemented photodetector and circuit is about 5μA/Hz above 1 kHz with a maximum detectable photocurrent of 20 mA. With the new circuit, the observed squeezing level in GEO 600 increased by 0.2 dB. The new circuit also creates headroom for higher laser power and more squeezing to be observed in the future in GEO 600 and is applicable to other optics experiments.

Specifying and calibrating instrumentations for wideband electronic power measurements. [in switching circuits

NASA Technical Reports Server (NTRS)

Lesco, D. J.; Weikle, D. H.

1980-01-01

The wideband electric power measurement related topics of electronic wattmeter calibration and specification are discussed. Tested calibration techniques are described in detail. Analytical methods used to determine the bandwidth requirements of instrumentation for switching circuit waveforms are presented and illustrated with examples from electric vehicle type applications. Analog multiplier wattmeters, digital wattmeters and calculating digital oscilloscopes are compared. The instrumentation characteristics which are critical to accurate wideband power measurement are described.

USSR and Eastern Europe Scientific Abstracts, Electronics and Electrical Engineering, Number 27

DTIC Science & Technology

1977-02-10

input and output conditions. The power section of the circuit is modified to permit triacs and thyristors, respectively, to function. The purpose of the...electronic materials, components, and devices, on circuit theory, pulse techniques, electromagnetic wave propagation, radar, quantum electronic theory...Lasers, Masers, Holography, Quasi-Optical 20 Microelectronics and General Circuit Theory and Information 21 Radars and Radio Wavigati on 22

Comparative methods to assess harmonic response of nonlinear piezoelectric energy harvesters interfaced with AC and DC circuits

NASA Astrophysics Data System (ADS)

Lan, Chunbo; Tang, Lihua; Harne, Ryan L.

2018-05-01

Nonlinear piezoelectric energy harvester (PEH) has been widely investigated during the past few years. Among the majority of these researches, a pure resistive load is used to evaluate power output. To power conventional electronics in practical application, the alternating current (AC) generated by nonlinear PEH needs to be transformed into a direct current (DC) and rectifying circuits are required to interface the device and electronic load. This paper aims at exploring the critical influences of AC and DC interface circuits on nonlinear PEH. As a representative nonlinear PEH, we fabricate and evaluate a monostable PEH in terms of generated power and useful operating bandwidth when it is connected to AC and DC interface circuits. Firstly, the harmonic balance analysis and equivalent circuit representation method are utilized to tackle the modeling of nonlinear energy harvesters connected to AC and DC interface circuits. The performances of the monostable PEH connected to these interface circuits are then analyzed and compared, focusing on the influences of the varying load, excitation and electromechanical coupling strength on the nonlinear dynamics, bandwidth and harvested power. Subsequently, the behaviors of the monostable PEH with AC and DC interface circuits are verified by experiment. Results indicate that both AC and DC interface circuits have a peculiar influence on the power peak shifting and operational bandwidth of the monostable PEH, which is quite different from that on the linear PEH.

Fluid cooled vehicle drive module

DOEpatents

Beihoff, Bruce C.; Radosevich, Lawrence D.; Meyer, Andreas A.; Gollhardt, Neil; Kannenberg, Daniel G.

2005-11-15

An electric vehicle drive includes a support may receive one or more power electronic circuits. The support may aid in removing heat from the circuits through fluid circulating through the support. The support, in conjunction with other packaging features may form a shield from both external EM/RFI and from interference generated by operation of the power electronic circuits. Features may be provided to permit and enhance connection of the circuitry to external circuitry, such as improved terminal configurations. Modular units may be assembled that may be coupled to electronic circuitry via plug-in arrangements or through interface with a backplane or similar mounting and interconnecting structures.

Screen printed passive components for flexible power electronics

NASA Astrophysics Data System (ADS)

Ostfeld, Aminy E.; Deckman, Igal; Gaikwad, Abhinav M.; Lochner, Claire M.; Arias, Ana C.

2015-10-01

Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components—inductors, capacitors, and resistors—perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application.

Screen printed passive components for flexible power electronics

PubMed Central

Ostfeld, Aminy E.; Deckman, Igal; Gaikwad, Abhinav M.; Lochner, Claire M.; Arias, Ana C.

2015-01-01

Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components—inductors, capacitors, and resistors—perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application. PMID:26514331

Screen printed passive components for flexible power electronics.

PubMed

Ostfeld, Aminy E; Deckman, Igal; Gaikwad, Abhinav M; Lochner, Claire M; Arias, Ana C

2015-10-30

Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components-inductors, capacitors, and resistors-perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application.

Development of a W-band Serpentine Waveguide Amplifier based on a UV-LIGA Microfabricated Copper Circuit

DTIC Science & Technology

2013-03-01

beam tunnel [5,6] for a high - power , wideband W- band traveling-wave tube (TWT) amplifier. UV-LIGA is also a promising technique at higher...wide- band , high - power operation of the amplifier [7, 8]. The interaction circuit consists of two traveling-wave stages separated by a power ...technique produces monolithic all-copper circuits, integrated with electron beam tunnel, suitable for high - power continuous-wave operation [1]. We

Detecting short circuits during assembly

NASA Technical Reports Server (NTRS)

Deboo, G. J.

1980-01-01

Detector circuit identifies shorts between bus bars of electronic equipment being wired. Detector sounds alarm and indicates which planes are shorted. Power and ground bus bars are scanned continuously until short circuit occurs.

HEMT Amplifiers and Equipment for their On-Wafer Testing

NASA Technical Reports Server (NTRS)

Fung, King man; Gaier, Todd; Samoska, Lorene; Deal, William; Radisic, Vesna; Mei, Xiaobing; Lai, Richard

2008-01-01

Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for onwafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local-oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits.

Automatic cross-sectioning and monitoring system locates defects in electronic devices

NASA Technical Reports Server (NTRS)

Jacobs, G.; Slaughter, B.

1971-01-01

System consists of motorized grinding and lapping apparatus, sample holder, and electronic control circuit. Low power microscope examines device to pinpoint location of circuit defect, and monitor displays output signal when defect is located exactly.

Fundamentals handbook of electrical and computer engineering. Volume 1 Circuits fields and electronics

NASA Astrophysics Data System (ADS)

Chang, S. S. L.

State of the art technology in circuits, fields, and electronics is discussed. The principles and applications of these technologies to industry, digital processing, microwave semiconductors, and computer-aided design are explained. Important concepts and methodologies in mathematics and physics are reviewed, and basic engineering sciences and associated design methods are dealt with, including: circuit theory and the design of magnetic circuits and active filter synthesis; digital signal processing, including FIR and IIR digital filter design; transmission lines, electromagnetic wave propagation and surface acoustic wave devices. Also considered are: electronics technologies, including power electronics, microwave semiconductors, GaAs devices, and magnetic bubble memories; digital circuits and logic design.

Design and Implementation of RF Energy Harvesting System for Low-Power Electronic Devices

NASA Astrophysics Data System (ADS)

Uzun, Yunus

2016-08-01

Radio frequency (RF) energy harvester systems are a good alternative for energizing of low-power electronics devices. In this work, an RF energy harvester is presented to obtain energy from Global System for Mobile Communications (GSM) 900 MHz signals. The energy harvester, consisting of a two-stage Dickson voltage multiplier circuit and L-type impedance matching circuits, was designed, simulated, fabricated and tested experimentally in terms of its performance. Simulation and experimental works were carried out for various input power levels, load resistances and input frequencies. Both simulation and experimental works have been carried out for this frequency band. An efficiency of 45% is obtained from the system at 0 dBm input power level using the impedance matching circuit. This corresponds to the power of 450 μW and this value is sufficient for many low-power devices. The most important parameters affecting the efficiency of the RF energy harvester are the input power level, frequency band, impedance matching and voltage multiplier circuits, load resistance and the selection of diodes. RF energy harvester designs should be optimized in terms of these parameters.

Module Six: Parallel Circuits; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

In this module the student will learn the rules that govern the characteristics of parallel circuits; the relationships between voltage, current, resistance and power; and the results of common troubles in parallel circuits. The module is divided into four lessons: rules of voltage and current, rules for resistance and power, variational analysis,…

Unstable behaviour of normally-off GaN E-HEMT under short-circuit

NASA Astrophysics Data System (ADS)

Martínez, P. J.; Maset, E.; Sanchis-Kilders, E.; Esteve, V.; Jordán, J.; Bta Ejea, J.; Ferreres, A.

2018-04-01

The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving their SC ruggedness.

Power Electronics Design of a Solar Powered In-car Wireless Tag for Asset Tracking and Parking Applications

NASA Astrophysics Data System (ADS)

Zhu, D.; Henaut, J.; Beeby, S. P.

2014-11-01

This paper reports the design and testing of a power conditioning circuit for a solar powered in-car wireless tag for asset tracking and parking application. Existing long range asset tracking is based on the GSM/GPRS network, which requires expensive subscriptions. The EU FP7 project CEWITT aims at developing a credit card sized autonomous wireless tag with GNSS geo-positioning capabilities to ensure the integrity and cost effectiveness for parking applications. It was found in previous research that solar cells are the most suitable energy sources for this application. This study focused on the power electronics design for the wireless tag. A suitable solar cell was chosen for its high power density. Charging circuit, hysteresis control circuit and LDO were designed and integrated to meet the system requirement. Test results showed that charging efficiency of 80 % had been achieved.

Assessment of SOI Devices and Circuits at Extreme Temperatures

NASA Technical Reports Server (NTRS)

Elbuluk, Malik; Hammoud, Ahmad; Patterson, Richard L.

2007-01-01

Electronics designed for use in future NASA space exploration missions are expected to encounter extreme temperatures and wide thermal swings. Such missions include planetary surface exploration, bases, rovers, landers, orbiters, and satellites. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of mission. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical devices, circuits, and systems suitable for applications in deep space exploration missions and aerospace environment. Silicon-On-Insulator (SOI) technology has been under active consideration in the electronics industry for many years due to the advantages that it can provide in integrated circuit (IC) chips and computer processors. Faster switching, less power, radiationtolerance, reduced leakage, and high temp-erature capability are some of the benefits that are offered by using SOI-based devices. A few SOI circuits are available commercially. However, there is a noticeable interest in SOI technology for different applications. Very little data, however, exist on the performance of such circuits under cryogenic temperatures. In this work, the performance of SOI integrated circuits, evaluated under low temperature and thermal cycling, are reported. In particular, three examples of SOI circuits that have been tested for operation at low at temperatures are given. These circuits are SOI operational amplifiers, timers and power MOSFET drivers. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these circuits for use in space exploration missions at cryogenic temperatures. The findings are useful to mission planners and circuit designers so that proper selection of electronic parts can be made, and risk assessment can be established for such circuits for use in space missions.

Voltage and power relationships in lithium-containing solar cells.

NASA Technical Reports Server (NTRS)

Faith, T. J.

1972-01-01

Photovoltaic characteristics have been measured on a large number of crucible-grown lithium-containing solar cells irradiated by 1-MeV electrons to fluences ranging from 3 x 10 to the 13th power to 3 x 10 to the 15th power electrons per sq cm. These measurements have established empirical relationships between cell photovoltaic parameters and lithium donor density gradient. Short-circuit current and maximum power measured immediately after irradiation decrease logarithmically with lithium gradient. Open-circuit voltage increases logarithmically with lithium gradient both immediately after irradiation and after recovery, the degree of recovery being strongly gradient-dependent at high fluence. As a result, the maximum power and the power at 0.43 V after recovery from 3 x 10 to the 15th power electrons per sq cm increase with increasing lithium gradient.

Fully Electrical Modeling of Thermoelectric Generators with Contact Thermal Resistance Under Different Operating Conditions

NASA Astrophysics Data System (ADS)

Siouane, Saima; Jovanović, Slaviša; Poure, Philippe

2017-01-01

The Seebeck effect is used in thermoelectric generators (TEGs) to supply electronic circuits by converting the waste thermal into electrical energy. This generated electrical power is directly proportional to the temperature difference between the TEG module's hot and cold sides. Depending on the applications, TEGs can be used either under constant temperature gradient between heat reservoirs or constant heat flow conditions. Moreover, the generated electrical power of a TEG depends not only on these operating conditions, but also on the contact thermal resistance. The influence of the contact thermal resistance on the generated electrical power have already been extensively reported in the literature. However, as reported in Park et al. (Energy Convers Manag 86:233, 2014) and Montecucco and Knox (IEEE Trans Power Electron 30:828, 2015), while designing TEG-powered circuit and systems, a TEG module is mostly modeled with a Thévenin equivalent circuit whose resistance is constant and voltage proportional to the temperature gradient applied to the TEG's terminals. This widely used simplified electrical TEG model is inaccurate and not suitable under constant heat flow conditions or when the contact thermal resistance is considered. Moreover, it does not provide realistic behaviour corresponding to the physical phenomena taking place in a TEG. Therefore, from the circuit designer's point of view, faithful and fully electrical TEG models under different operating conditions are needed. Such models are mainly necessary to design and evaluate the power conditioning electronic stages and the maximum power point tracking algorithms of a TEG power supply. In this study, these fully electrical models with the contact thermal resistance taken into account are presented and the analytical expressions of the Thévenin equivalent circuit parameters are provided.

Superconductor Digital Electronics: -- Current Status, Future Prospects

NASA Astrophysics Data System (ADS)

Mukhanov, Oleg

2011-03-01

Two major applications of superconductor electronics: communications and supercomputing will be presented. These areas hold a significant promise of a large impact on electronics state-of-the-art for the defense and commercial markets stemming from the fundamental advantages of superconductivity: simultaneous high speed and low power, lossless interconnect, natural quantization, and high sensitivity. The availability of relatively small cryocoolers lowered the foremost market barrier for cryogenically-cooled superconductor electronic systems. These fundamental advantages enabled a novel Digital-RF architecture - a disruptive technological approach changing wireless communications, radar, and surveillance system architectures dramatically. Practical results were achieved for Digital-RF systems in which wide-band, multi-band radio frequency signals are directly digitized and digital domain is expanded throughout the entire system. Digital-RF systems combine digital and mixed signal integrated circuits based on Rapid Single Flux Quantum (RSFQ) technology, superconductor analog filter circuits, and semiconductor post-processing circuits. The demonstrated cryocooled Digital-RF systems are the world's first and fastest directly digitizing receivers operating with live satellite signals, enabling multi-net data links, and performing signal acquisition from HF to L-band with 30 GHz clock frequencies. In supercomputing, superconductivity leads to the highest energy efficiencies per operation. Superconductor technology based on manipulation and ballistic transfer of magnetic flux quanta provides a superior low-power alternative to CMOS and other charge-transfer based device technologies. The fundamental energy consumption in SFQ circuits defined by flux quanta energy 2 x 10-19 J. Recently, a novel energy-efficient zero-static-power SFQ technology, eSFQ/ERSFQ was invented, which retains all advantages of standard RSFQ circuits: high-speed, dc power, internal memory. The voltage bias regulation, determined by SFQ clock, enables the zero-power at zero-activity regimes, indispensable for sensor and quantum bit readout.

Modeling of power electronic systems with EMTP

NASA Technical Reports Server (NTRS)

Tam, Kwa-Sur; Dravid, Narayan V.

1989-01-01

In view of the potential impact of power electronics on power systems, there is need for a computer modeling/analysis tool to perform simulation studies on power systems with power electronic components as well as to educate engineering students about such systems. The modeling of the major power electronic components of the NASA Space Station Freedom Electric Power System is described along with ElectroMagnetic Transients Program (EMTP) and it is demonstrated that EMTP can serve as a very useful tool for teaching, design, analysis, and research in the area of power systems with power electronic components. EMTP modeling of power electronic circuits is described and simulation results are presented.

46 CFR 116.202 - Plans and information required.

Code of Federal Regulations, 2014 CFR

2014-10-01

... electronic format. Information for submitting the VSP electronically can be found at http://www.uscg.mil/HQ... movers; (v) Type and size of generator cables, bus-tie cables, feeders, and branch circuit cables; (vi) Power, lighting, and interior communication panelboards with number of circuits and rating of energy...

46 CFR 116.202 - Plans and information required.

Code of Federal Regulations, 2013 CFR

2013-10-01

... electronic format. Information for submitting the VSP electronically can be found at http://www.uscg.mil/HQ... movers; (v) Type and size of generator cables, bus-tie cables, feeders, and branch circuit cables; (vi) Power, lighting, and interior communication panelboards with number of circuits and rating of energy...

High-Voltage MOSFET Switching Circuit

NASA Technical Reports Server (NTRS)

Jensen, Kenneth A.

1995-01-01

Circuit reliably switches power at supply potential of minus 1,500 V, with controlled frequency and duty cycle. Used in argon-plasma ion-bombardment equipment for texturing copper electrodes, as described in "Texturing Copper To Reduce Secondary Emission of Electrons" (LEW-15898), also adapted to use in powering gaseous flash lamps and stroboscopes.

Higher Efficiency HVAC Motors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flynn, Charles Joseph

The objective of this project was to design and build a cost competitive, more efficient heating, ventilation, and air conditioning (HVAC) motor than what is currently available on the market. Though different potential motor architectures among QMP’s primary technology platforms were investigated and evaluated, including through the building of numerous prototypes, the project ultimately focused on scaling up QM Power, Inc.’s (QMP) Q-Sync permanent magnet synchronous motors from available sub-fractional horsepower (HP) sizes for commercial refrigeration fan applications to larger fractional horsepower sizes appropriate for HVAC applications, and to add multi-speed functionality. The more specific goal became the research, design,more » development, and testing of a prototype 1/2 HP Q-Sync motor that has at least two operating speeds and 87% peak efficiency compared to incumbent electronically commutated motors (EC or ECM, also known as brushless direct current (DC) motors), the heretofore highest efficiency HVACR fan motor solution, at approximately 82% peak efficiency. The resulting motor prototype built achieved these goals, hitting 90% efficiency and .95 power factor at full load and speed, and 80% efficiency and .7 power factor at half speed. Q-Sync, developed in part through a DOE SBIR grant (Award # DE-SC0006311), is a novel, patented motor technology that improves on electronically commutated permanent magnet motors through an advanced electronic circuit technology. It allows a motor to “sync” with the alternating current (AC) power flow. It does so by eliminating the constant, wasteful power conversions from AC to DC and back to AC through the synthetic creation of a new AC wave on the primary circuit board (PCB) by a process called pulse width modulation (PWM; aka electronic commutation) that is incessantly required to sustain motor operation in an EC permanent magnet motor. The Q-Sync circuit improves the power factor of the motor by removing all failure prone capacitors from the power stage. Q-Sync’s simpler electronics also result in higher efficiency because it eliminates the power required by the PCB to perform the obviated power conversions and PWM processes after line synchronous operating speed is reached in the first 5 seconds of operation, after which the PWM circuits drop out and a much less energy intensive “pass through” circuit takes over, allowing the grid-supplied AC power to sustain the motor’s ongoing operation.« less

A Q-band low noise GaAs pHEMT MMIC power amplifier for pulse electron spin resonance spectrometer

NASA Astrophysics Data System (ADS)

Sitnikov, A.; Kalabukhova, E.; Oliynyk, V.; Kolisnichenko, M.

2017-05-01

We present the design and development of a single stage pulse power amplifier working in the frequency range 32-38 GHz based on a monolithic microwave integrated circuit (MMIC). We have designed the MMIC power amplifier by using the commercially available packaged GaAs pseudomorphic high electron mobility transistor. The circuit fabrication and assembly process includes the elaboration of the matching networks for the MMIC power amplifier and their assembling as well as the topology outline and fabrication of the printed circuit board of the waveguide-microstrip line transitions. At room ambient temperature, the measured peak output power from the prototype amplifier is 35.5 dBm for 16.6 dBm input driving power, corresponding to 19 dB gain. The measured rise/fall time of the output microwave signal modulated by a high-speed PIN diode was obtained as 5-6 ns at 20-250 ns pulse width with 100 kHz pulse repetition rate frequency.

A Q-band low noise GaAs pHEMT MMIC power amplifier for pulse electron spin resonance spectrometer.

PubMed

Sitnikov, A; Kalabukhova, E; Oliynyk, V; Kolisnichenko, M

2017-05-01

We present the design and development of a single stage pulse power amplifier working in the frequency range 32-38 GHz based on a monolithic microwave integrated circuit (MMIC). We have designed the MMIC power amplifier by using the commercially available packaged GaAs pseudomorphic high electron mobility transistor. The circuit fabrication and assembly process includes the elaboration of the matching networks for the MMIC power amplifier and their assembling as well as the topology outline and fabrication of the printed circuit board of the waveguide-microstrip line transitions. At room ambient temperature, the measured peak output power from the prototype amplifier is 35.5 dBm for 16.6 dBm input driving power, corresponding to 19 dB gain. The measured rise/fall time of the output microwave signal modulated by a high-speed PIN diode was obtained as 5-6 ns at 20-250 ns pulse width with 100 kHz pulse repetition rate frequency.

Power Electronics Design Laboratory Exercise for Final-Year M.Sc. Students

ERIC Educational Resources Information Center

Max, L.; Thiringer, T.; Undeland, T.; Karlsson, R.

2009-01-01

This paper presents experiences and results from a project task in power electronics for students at Chalmers University of Technology, Goteborg, Sweden, based on a flyback test board. The board is used in the course Power Electronic Devices and Applications. In the project task, the students design snubber circuits, improve the control of the…

Over-voltage protection system and method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chi, Song; Dong, Dong; Lai, Rixin

An over-voltage protection system includes an electronic valve connected across two terminals of a circuit and an over-voltage detection circuit connected across one of the plurality of semiconductor devices for detecting an over-voltage across the circuit. The electronic valve includes a plurality of semiconductor devices connected in series. The over-voltage detection circuit includes a voltage divider circuit connected to a break-over diode in a way to provide a representative low voltage to the break-over diode and an optocoupler configured to receive a current from the break-over diode when the representative low voltage exceeds a threshold voltage of the break-over diodemore » indicating an over-voltage condition. The representative low voltage provided to the break-over diode represents a voltage across the one semiconductor device. A plurality of self-powered gate drive circuits are connected to the plurality of semiconductor devices, wherein the plurality of self-powered gate drive circuits receive over-voltage triggering pulses from the optocoupler during the over-voltage condition and switch on the plurality of semiconductor devices to bypass the circuit.« less

Redundant electronic circuit provides fail-safe control

NASA Technical Reports Server (NTRS)

Archer, J. W.

1970-01-01

Circuit using dual control amplifiers and dual position demand potentiometers powered from separate sources is used for reliable hydraulic valve controller that prevents closure of valve when control circuits fail, and maintains valve control to close tolerance for more common modes of controller failure.

Fixation of operating point and measurement of turn on characteristics of IGBT F4-75R06W1E3

NASA Astrophysics Data System (ADS)

Haseena, A.; Subhash Joshi T., G.; George, Saly

2018-05-01

For the proficient operation of the Power electronic circuit, signal level performance of power electronic devices are very important. For getting good signal level characteristics, fixing operating point is very critical. Device deviates from the typical characteristics given in the datasheet due to the presence of stray components in the circuit lay out. Fixation of operating point of typical silicon IGBT and its turn on characteristics is discussed in this paper.

Analysis of a Distributed Pulse Power System Using a Circuit Analysis Code

DTIC Science & Technology

1979-06-01

dose rate was then integrated to give a number that could be compared with measure- ments made using thermal luminescent dosimeters ( TLD ’ s). Since...NM 8 7117 AND THE BDM CORPORATION, ALBUQUERQUE, NM 87106 Abstract A sophisticated computer code (SCEPTRE), used to analyze electronic circuits...computer code (SCEPTRE), used to analyze electronic circuits, was used to evaluate the performance of a large flash X-ray machine. This device was

Triple Hybrid Energy Harvesting Interface Electronics

NASA Astrophysics Data System (ADS)

Uluşan, H.; Chamanian, S.; Pathirana, W. M. P. R.; Zorlu, Ö.; Muhtaroğlu, A.; Külah, H.

2016-11-01

This study presents a novel triple hybrid system that combines simultaneously generated power from thermoelectric (TE), vibration-based electromagnetic (EM) and piezoelectric (PZT) harvesters for a relatively high power supply capability. In the proposed solution each harvesting source utilizes a distinct power management circuit that generates a DC voltage suitable for combining the three parallel supplies. The circuits are designed and implemented in 180 nm standard CMOS technology, and are terminated with a schottky diode to avoid reverse current flow. The harvested AC signal from the EM harvester is rectified with a self-powered AC-DC doubler, which utilizes active diode structures to minimize the forward- bias voltage drop. The PZT interface electronics utilizes a negative voltage converter as the first stage, followed by synchronous power extraction and DC-to-DC conversion through internal switches, and an external inductor. The ultra-low voltage DC power harvested by the TE generator is stepped up through a charge-pump driven by an LC oscillator with fully- integrated center-tapped differential inductors. Test results indicate that hybrid energy harvesting circuit provides more than 1 V output for load resistances higher than 100 kΩ (10 μW) where the stand-alone harvesting circuits are not able to reach 1 V output. This is the first hybrid harvester circuit that simultaneously extracts energy from three independent sources, and delivers a single DC output.

Compact Circuit Preprocesses Accelerometer Output

NASA Technical Reports Server (NTRS)

Bozeman, Richard J., Jr.

1993-01-01

Compact electronic circuit transfers dc power to, and preprocesses ac output of, accelerometer and associated preamplifier. Incorporated into accelerometer case during initial fabrication or retrofit onto commercial accelerometer. Made of commercial integrated circuits and other conventional components; made smaller by use of micrologic and surface-mount technology.

Circuit for Communication over DC Power Line Using High Temperature Electronics

NASA Technical Reports Server (NTRS)

Krasowski, Michael J. (Inventor); Prokop, Norman F. (Inventor)

2014-01-01

A high temperature communications circuit includes a power conductor for concurrently conducting electrical energy for powering circuit components and transmitting a modulated data signal, and a demodulator for demodulating the data signal and generating a serial bit stream based on the data signal. The demodulator includes an absolute value amplifier for conditionally inverting or conditionally passing a signal applied to the absolute value amplifier. The absolute value amplifier utilizes no diodes to control the conditional inversion or passing of the signal applied to the absolute value amplifier.

Teaching Behavioral Modeling and Simulation Techniques for Power Electronics Courses

ERIC Educational Resources Information Center

Abramovitz, A.

2011-01-01

This paper suggests a pedagogical approach to teaching the subject of behavioral modeling of switch-mode power electronics systems through simulation by general-purpose electronic circuit simulators. The methodology is oriented toward electrical engineering (EE) students at the undergraduate level, enrolled in courses such as "Power…

CMOS Ultra Low Power Radiation Tolerant (CULPRiT) Microelectronics

NASA Technical Reports Server (NTRS)

Yeh, Penshu; Maki, Gary

2007-01-01

Space Electronics needs Radiation Tolerance or hardness to withstand the harsh space environment: high-energy particles can change the state of the electronics or puncture transistors making them disfunctional. This viewgraph document reviews the use of CMOS Ultra Low Power Radiation Tolerant circuits for NASA's electronic requirements.

Wide-Temperature Electronics for Thermal Control of Nanosats

NASA Technical Reports Server (NTRS)

Dickman, John Ellis; Gerber, Scott

2000-01-01

This document represents a presentation which examines the wide and low-temperature electronics required for NanoSatellites. In the past, larger spacecraft used Radioisotope Heating Units (RHU's). The advantage of the use of these electronics is that they could eliminate or reduce the requirement for RHU's, reduce system weight and simplify spacecraft design by eliminating containment/support structures for RHU's. The Glenn Research Center's Wide/Low Temperature Power Electronics Program supports the development of power systems capable of reliable, efficient operation over wide and low temperature ranges. Included charts review the successes and failures of various electronic devices, the IRF541 HEXFET, The NE76118n-Channel GaAS MESFET, the Lithium Carbon Monofluoride Primary Battery, and a COTS DC-DC converter. The preliminary result of wide/low temperature testing of CTS and custom parts and power circuit indicate that through careful selection of components and technologies it is possible to design and build power circuits which operate from room temperature to near 100K.

Simple photometer circuits using modular electronic components

NASA Technical Reports Server (NTRS)

Wampler, J. E.

1975-01-01

Operational and peak holding amplifiers are discussed as useful circuits for bioluminescence assays. Circuit diagrams are provided. While analog methods can give a good integration on short time scales, digital methods were found best for long term integration in bioluminescence assays. Power supplies, a general photometer circuit with ratio capability, and variations in the basic photometer design are also considered.

Power inverter with optical isolation

DOEpatents

Duncan, Paul G.; Schroeder, John Alan

2005-12-06

An optically isolated power electronic power conversion circuit that includes an input electrical power source, a heat pipe, a power electronic switch or plurality of interconnected power electronic switches, a mechanism for connecting the switch to the input power source, a mechanism for connecting comprising an interconnecting cable and/or bus bar or plurality of interconnecting cables and/or input bus bars, an optically isolated drive circuit connected to the switch, a heat sink assembly upon which the power electronic switch or switches is mounted, an output load, a mechanism for connecting the switch to the output load, the mechanism for connecting including an interconnecting cable and/or bus bar or plurality of interconnecting cables and/or output bus bars, at least one a fiber optic temperature sensor mounted on the heat sink assembly, at least one fiber optic current sensor mounted on the load interconnection cable and/or output bus bar, at least one fiber optic voltage sensor mounted on the load interconnection cable and/or output bus bar, at least one fiber optic current sensor mounted on the input power interconnection cable and/or input bus bar, and at least one fiber optic voltage sensor mounted on the input power interconnection cable and/or input bus bar.

Micropower circuits for bidirectional wireless telemetry in neural recording applications.

PubMed

Neihart, Nathan M; Harrison, Reid R

2005-11-01

State-of-the art neural recording systems require electronics allowing for transcutaneous, bidirectional data transfer. As these circuits will be implanted near the brain, they must be small and low power. We have developed micropower integrated circuits for recovering clock and data signals over a transcutaneous power link. The data recovery circuit produces a digital data signal from an ac power waveform that has been amplitude modulated. We have also developed an FM transmitter with the lowest power dissipation reported for biosignal telemetry. The FM transmitter consists of a low-noise biopotential amplifier and a voltage controlled oscillator used to transmit amplified neural signals at a frequency near 433 MHz. All circuits were fabricated in a standard 0.5-microm CMOS VLSI process. The resulting chip is powered through a wireless inductive link. The power consumption of the clock and data recovery circuits is measured to be 129 microW; the power consumption of the transmitter is measured to be 465 microW when using an external surface mount inductor. Using a parasitic antenna less than 2 mm long, a received power level was measured to be -59.73 dBm at a distance of one meter.

Electronic ripple indicator

NASA Technical Reports Server (NTRS)

Davidson, J. K.; Houck, W. H.

1971-01-01

Electronic circuit for monitoring excessive ripple voltage on dc power lines senses voltage variations from few millivolts to maximum of 10 volts rms. Instrument is used wherever power supply fluctuations might endanger system operations or damage equipment. Device is inexpensive and easily packaged in small chassis.

High-Power, High-Frequency Si-Based (SiGe) Transistors Developed

NASA Technical Reports Server (NTRS)

Ponchak, George E.

2002-01-01

Future NASA, DOD, and commercial products will require electronic circuits that have greater functionality and versatility but occupy less space and cost less money to build and integrate than current products. System on a Chip (SOAC), a single semiconductor substrate containing circuits that perform many functions or containing an entire system, is widely recognized as the best technology for achieving low-cost, small-sized systems. Thus, a circuit technology is required that can gather, process, store, and transmit data or communications. Since silicon-integrated circuits are already used for data processing and storage and the infrastructure that supports silicon circuit fabrication is very large, it is sensible to develop communication circuits on silicon so that all the system functions can be integrated onto a single wafer. Until recently, silicon integrated circuits did not function well at the frequencies required for wireless or microwave communications, but with the introduction of small amounts of germanium into the silicon to make silicon-germanium (SiGe) transistors, silicon-based communication circuits are possible. Although microwavefrequency SiGe circuits have been demonstrated, there has been difficulty in obtaining the high power from their transistors that is required for the amplifiers of a transmitter, and many researchers have thought that this could not be done. The NASA Glenn Research Center and collaborators at the University of Michigan have developed SiGe transistors and amplifiers with state-of-the-art output power at microwave frequencies from 8 to 20 GHz. These transistors are fabricated using standard silicon processing and may be integrated with CMOS integrated circuits on a single chip. A scanning electron microscope image of a typical SiGe heterojunction bipolar transistor is shown in the preceding photomicrograph. This transistor achieved a record output power of 550 mW and an associated power-added efficiency of 33 percent at 8.4 GHz, as shown. Record performance was also demonstrated at 12.6 and 18 GHz. Developers have combined these state-of-the-art transistors with transmission lines and micromachined passive circuit components, such as inductors and capacitors, to build multistage amplifiers. Currently, a 1-W, 8.4-GHz power amplifier is being built for NASA deep space communication architectures.

Development of an X-Band 50 MW Multiple Beam Klystron

NASA Astrophysics Data System (ADS)

Song, Liqun; Ferguson, Patrick; Ives, R. Lawrence; Miram, George; Marsden, David; Mizuhara, Max

2003-12-01

Calabazas Creek Research, Inc. is developing an X-band 50 MW multiple beam klystron (MBK) on a DOE SBIR Phase II grant. The electrical design and preliminary mechanical design were completed on the Phase I. This MBK consists of eight discrete klystron circuits driven by eight electron beams located symmetrically on a circle with a radius of 6.3 cm. Each beam operates at 190 kV and 66 A. The eight beam electron gun is in development on a DOE SBIR Phase II grant. Each circuit consists of an input cavity, two gain cavities, three penultimate cavities, and a three cavity output circuit operating in the PI/2 mode. Ring resonators were initially proposed for the complete circuit; however, low beam — wave interaction resulted in the necessity to use discrete cavities for all eight circuits. The input cavities are coupled via hybrid waveguides to ensure constant drive power amplitude and phase. The output circuits can either be combined using compact waveguide twists driving a TE01 high power window or combined into a TM04 mode converter driving the same TE01 window. The gain and efficiency for a single circuit has been optimized using KLSC, a 2 1/2D large signal klystron code. Simulations for a single circuit predict an efficiency of 53% for a single output cavity and 55% for the three cavity output resonator. The total RF output power for this MBK is 55 MW. During the Phase II emphasis will be given to cost reduction techniques resulting in a robust — high efficient — long life high power amplifier.

Module Eleven: Capacitance; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

In this module the student will learn about another circuit quantity, capacitance, and discover the effects of this component on circuit current, voltage, and power. The module is divided into seven lessons: the capacitor, theory of capacitance, total capacitance, RC (resistive-capacitive circuit) time constant, capacitive reactance, phase and…

Reproducible Growth of High-Quality Cubic-SiC Layers

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Powell, J. Anthony

2004-01-01

Semiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Miniature Radioisotope Thermoelectric Power Cubes

NASA Technical Reports Server (NTRS)

Patel, Jagdish U.; Fleurial, Jean-Pierre; Snyder, G. Jeffrey; Caillat, Thierry

2004-01-01

Cube-shaped thermoelectric devices energized by a particles from radioactive decay of Cm-244 have been proposed as long-lived sources of power. These power cubes are intended especially for incorporation into electronic circuits that must operate in dark, extremely cold locations (e.g., polar locations or deep underwater on Earth, or in deep interplanetary space). Unlike conventional radioisotope thermoelectric generators used heretofore as central power sources in some spacecraft, the proposed power cubes would be small enough (volumes would range between 0.1 and 0.2 cm3) to play the roles of batteries that are parts of, and dedicated to, individual electronic-circuit packages. Unlike electrochemical batteries, these power cubes would perform well at low temperatures. They would also last much longer: given that the half-life of Cm-244 is 18 years, a power cube could remain adequate as a power source for years, depending on the power demand in its particular application.

47 CFR 15.103 - Exempted devices.

Code of Federal Regulations, 2011 CFR

2011-10-01

... exclusively as an electronic control or power system utilized by a public utility or in an industrial plant... circuit to convert the signal to the format required (e.g., an integrated circuit for analog to digital...

47 CFR 15.103 - Exempted devices.

Code of Federal Regulations, 2010 CFR

2010-10-01

... exclusively as an electronic control or power system utilized by a public utility or in an industrial plant... circuit to convert the signal to the format required (e.g., an integrated circuit for analog to digital...

47 CFR 15.103 - Exempted devices.

Code of Federal Regulations, 2013 CFR

2013-10-01

... exclusively as an electronic control or power system utilized by a public utility or in an industrial plant... circuit to convert the signal to the format required (e.g., an integrated circuit for analog to digital...

47 CFR 15.103 - Exempted devices.

Code of Federal Regulations, 2014 CFR

2014-10-01

... exclusively as an electronic control or power system utilized by a public utility or in an industrial plant... circuit to convert the signal to the format required (e.g., an integrated circuit for analog to digital...

47 CFR 15.103 - Exempted devices.

Code of Federal Regulations, 2012 CFR

2012-10-01

... exclusively as an electronic control or power system utilized by a public utility or in an industrial plant... circuit to convert the signal to the format required (e.g., an integrated circuit for analog to digital...

Design of a Compact Coaxial Magnetized Plasma Gun for Magnetic Bubble Expansion Experiments

DTIC Science & Technology

2009-06-01

a peak a current Igun~ 80 kA and gun voltages Vgun~1 kV utine operation at a bank voltage of 7.5 kV yiel plasm after breakdown. Typical Igun and...and D2 are power electronic diodes, SW is the dump relay and C is the bias flux capacitor bank. The SCR, controlled by a 1 kV Trigger Pulse...capacitor charging circuit is shown in Figure 8. Figure 8. Gas valve capacitor charging circuit diagram 0 kΩ. 1, D2 and D3 are power electronic

Formalization, equivalence and generalization of basic resonance electrical circuits

NASA Astrophysics Data System (ADS)

Penev, Dimitar; Arnaudov, Dimitar; Hinov, Nikolay

2017-12-01

In the work are presented basic resonance circuits, which are used in resonance energy converters. The following resonant circuits are considered: serial, serial with parallel load parallel capacitor, parallel and parallel with serial loaded inductance. For the circuits under consideration, expressions are generated for the frequencies of own oscillations and for the equivalence of the active power emitted in the load. Mathematical expressions are graphically constructed and verified using computer simulations. The results obtained are used in the model based design of resonant energy converters with DC or AC output. This guaranteed the output indicators of power electronic devices.

Field-Sequential Color Converter

NASA Technical Reports Server (NTRS)

Studer, Victor J.

1989-01-01

Electronic conversion circuit enables display of signals from field-sequential color-television camera on color video camera. Designed for incorporation into color-television monitor on Space Shuttle, circuit weighs less, takes up less space, and consumes less power than previous conversion equipment. Incorporates state-of-art memory devices, also used in terrestrial stationary or portable closed-circuit television systems.

Power electronics for low power arcjets

NASA Technical Reports Server (NTRS)

Hamley, John A.; Hill, Gerald M.

1991-01-01

In anticipation of the needs of future light-weight, low-power spacecraft, arcjet power electronics in the 100 to 400 W operating range were developed. Limited spacecraft power and thermal control capacity of these small spacecraft emphasized the need for high efficiency. Power topologies similar to those in the higher 2 kW and 5 to 30 kW power range were implemented, including a four transistor bridge switching circuit, current mode pulse-width modulated control, and an output current averaging inductor with an integral pulse generation winding. Reduction of switching transients was accomplished using a low inductance power distribution network, and no passive snubber circuits were necessary for power switch protection. Phase shift control of the power bridge was accomplished using an improved pulse width modulation to phase shift converter circuit. These features, along with conservative magnetics designs allowed power conversion efficiencies of greater than 92.5 percent to be achieved into resistive loads over the entire operating range of the converter. Electromagnetic compatibility requirements were not considered in this work, and control power for the converter was derived from AC mains. Addition of input filters and control power converters would result in an efficiency of on the order of 90 percent for a flight unit. Due to the developmental nature of arcjet systems at this power level, the exact nature of the thruster/power processor interface was not quantified. Output regulation and current ripple requirements of 1 and 20 percent respectively, as well as starting techniques, were derived from the characteristics of the 2 kW system but an open circuit voltage in excess of 175 V was specified. Arcjet integration tests were performed, resulting in successful starts and stable arcjet operation at power levels as low as 240 W with simulated hydrazine propellants.

A power management circuit with 50% efficiency and large load capacity for triboelectric nanogenerator

NASA Astrophysics Data System (ADS)

Bao, Dechun; Luo, Lichuan; Zhang, Zhaohua; Ren, Tianling

2017-09-01

Recently, triboelectric nanogenerators (TENGs), as a collection technology with characteristics of high reliability, high energy density and low cost, has attracted more and more attention. However, the energy coming from TENGs needs to be stored in a storage unit effectively due to its unstable ac output. The traditional energy storage circuit has an extremely low energy storage efficiency for TENGs because of their high internal impedance. This paper presents a new power management circuit used to optimize the energy using efficiency of TENGs, and realize large load capacity. The power management circuit mainly includes rectification storage circuit and DC-DC management circuit. A rotating TENG with maximal energy output of 106 mW at 170 rpm based on PCB is used for the experimental verification. Experimental results show that the power energy transforming to the storage capacitor reach up to 53 mW and the energy using efficiency is calculated as 50%. When different loading resistances range from 0.82 to 34.5 k {{Ω }} are connected to the storage capacitor in parallel, the power energy stored in the storage capacitor is all about 52.5 mW. Getting through the circuit, the power energy coming from the TENGs can be used to drive numerous conventional electronics, such as wearable watches.

SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments

NASA Astrophysics Data System (ADS)

Godignon, P.; Alexandru, M.; Banu, V.; Montserrat, J.; Jorda, X.; Vellvehi, M.; Schmidt, B.; Michel, P.; Millan, J.

2014-08-01

The currently developed SiC electronic devices are more robust to high temperature operation and radiation exposure damage than correspondingly rated Si ones. In order to integrate the existent SiC high power and high temperature electronics into more complex systems, a SiC integrated circuit (IC) technology capable of operation at temperatures substantially above the conventional ones is required. Therefore, this paper is a step towards the development of ICs-control electronics that have to attend the harsh environment power applications. Concretely, we present the development of SiC MESFET-based digital circuitry, able to integrate gate driver for SiC power devices. Furthermore, a planar lateral power MESFET is developed with the aim of its co-integration on the same chip with the previously mentioned SiC digital ICs technology. And finally, experimental results on SiC Schottky-gated devices irradiated with protons and electrons are presented. This development is based on the Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.

Integrated circuits and logic operations based on single-layer MoS2.

PubMed

Radisavljevic, Branimir; Whitwick, Michael Brian; Kis, Andras

2011-12-27

Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental limits in the near future. Two-dimensional materials such as single-layer MoS(2) represent the ultimate limit of miniaturization in the vertical dimension, are interesting as building blocks of low-power nanoelectronic devices, and are suitable for integration due to their planar geometry. Because they are less than 1 nm thin, 2D materials in transistors could also lead to reduced short channel effects and result in fabrication of smaller and more power-efficient transistors. Here, we report on the first integrated circuit based on a two-dimensional semiconductor MoS(2). Our integrated circuits are capable of operating as inverters, converting logical "1" into logical "0", with room-temperature voltage gain higher than 1, making them suitable for incorporation into digital circuits. We also show that electrical circuits composed of single-layer MoS(2) transistors are capable of performing the NOR logic operation, the basis from which all logical operations and full digital functionality can be deduced.

Interface For MIL-STD-1553B Data Bus

NASA Technical Reports Server (NTRS)

Davies, Bryan L.; Osborn, Stephen H.; Sullender, Craig C.

1993-01-01

Electronic control-logic subsystem acts as interface between microcontroller and MIL-STD-1553B data bus. Subsystem made of relatively small number of integrated circuits. Advantages include low power, few integrated-circuit chips, and little need for control signals.

Apparatus for Teaching Physics

ERIC Educational Resources Information Center

Gottlieb, Herbert H., Ed.

1977-01-01

Describes an electronic digital counter, a speed-of-light experiment using a television, a simple out-of-circuit method for determining if a transistor is made of silicon or germanium, and the use of dry cells to power TTL integrated circuits. (MLH)

Thermionic Power Cell To Harness Heat Energies for Geothermal Applications

NASA Technical Reports Server (NTRS)

Manohara, Harish; Mojarradi, Mohammad; Greer, Harold F.

2011-01-01

A unit thermionic power cell (TPC) concept has been developed that converts natural heat found in high-temperature environments (460 to 700 C) into electrical power for in situ instruments and electronics. Thermionic emission of electrons occurs when an emitter filament is heated to gwhite hot h temperatures (>1,000 C) allowing electrons to overcome the potential barrier and emit into the vacuum. These electrons are then collected by an anode, and transported to the external circuit for energy storage.

Ultra Low Energy Binary Decision Diagram Circuits Using Few Electron Transistors

NASA Astrophysics Data System (ADS)

Saripalli, Vinay; Narayanan, Vijay; Datta, Suman

Novel medical applications involving embedded sensors, require ultra low energy dissipation with low-to-moderate performance (10kHz-100MHz) driving the conventional MOSFETs into sub-threshold operation regime. In this paper, we present an alternate ultra-low power computing architecture using Binary Decision Diagram based logic circuits implemented using Single Electron Transistors (SETs) operating in the Coulomb blockade regime with very low supply voltages. We evaluate the energy - performance tradeoff metrics of such BDD circuits using time domain Monte Carlo simulations and compare them with the energy-optimized CMOS logic circuits. Simulation results show that the proposed approach achieves better energy-delay characteristics than CMOS realizations.

Resonant Circuits and Introduction to Vacuum Tubes, Industrial Electronics 2: 9325.03. Course Outline.

ERIC Educational Resources Information Center

Dade County Public Schools, Miami, FL.

The 135 clock-hour course for the 11th year consists of outlines for blocks of instruction on series resonant circuits, parallel resonant circuits, transformer theory and application, vacuum tube fundamentals, diode vacuum tubes, triode tube construction and parameters, vacuum tube tetrodes and pentodes, beam-power and multisection tubes, and…

Module Five: Relationships of Current, Voltage, and Resistance; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

This module covers the relationships between current and voltage; resistance in a series circuit; how to determine the values of current, voltage, resistance, and power in resistive series circuits; the effects of source internal resistance; and an introduction to the troubleshooting of series circuits. This module is divided into five lessons:…

Physically separating printed circuit boards with a resilient, conductive contact

NASA Technical Reports Server (NTRS)

Baker, John D. (Inventor); Montalvo, Alberto (Inventor)

1999-01-01

A multi-board module provides high density electronic packaging in which multiple printed circuit boards are stacked. Electrical power, or signals, are conducted between the boards through a resilient contact. One end of the contact is located at a via in the lower circuit board and soldered to a pad near the via. The top surface of the contact rests against a via of the facing printed circuit board.

Thermal Peak Management Using Organic Phase Change Materials for Latent Heat Storage in Electronic Applications

PubMed Central

Maxa, Jacob; Novikov, Andrej; Nowottnick, Mathias

2017-01-01

Modern high power electronics devices consists of a large amount of integrated circuits for switching and supply applications. Beside the benefits, the technology exhibits the problem of an ever increasing power density. Nowadays, heat sinks that are directly mounted on a device, are used to reduce the on-chip temperature and dissipate the thermal energy to the environment. This paper presents a concept of a composite coating for electronic components on printed circuit boards or electronic assemblies that is able to buffer a certain amount of thermal energy, dissipated from a device. The idea is to suppress temperature peaks in electronic components during load peaks or electronic shorts, which otherwise could damage or destroy the device, by using a phase change material to buffer the thermal energy. The phase change material coating could be directly applied on the chip package or the PCB using different mechanical retaining jigs.

Transmission-line-circuit model of an 85-TW, 25-MA pulsed-power accelerator

NASA Astrophysics Data System (ADS)

Hutsel, B. T.; Corcoran, P. A.; Cuneo, M. E.; Gomez, M. R.; Hess, M. H.; Hinshelwood, D. D.; Jennings, C. A.; Laity, G. R.; Lamppa, D. C.; McBride, R. D.; Moore, J. K.; Myers, A.; Rose, D. V.; Slutz, S. A.; Stygar, W. A.; Waisman, E. M.; Welch, D. R.; Whitney, B. A.

2018-03-01

We have developed a physics-based transmission-line-circuit model of the Z pulsed-power accelerator. The 33-m-diameter Z machine generates a peak electrical power as high as 85 TW, and delivers as much as 25 MA to a physics load. The circuit model is used to design and analyze experiments conducted on Z. The model consists of 36 networks of transmission-line-circuit elements and resistors that represent each of Zs 36 modules. The model of each module includes a Marx generator, intermediate-energy-storage capacitor, laser-triggered gas switch, pulse-forming line, self-break water switches, and tri-plate transmission lines. The circuit model also includes elements that represent Zs water convolute, vacuum insulator stack, four parallel outer magnetically insulated vacuum transmission lines (MITLs), double-post-hole vacuum convolute, inner vacuum MITL, and physics load. Within the vacuum-transmission-line system the model conducts analytic calculations of current loss. To calculate the loss, the model simulates the following processes: (i) electron emission from MITL cathode surfaces wherever an electric-field threshold has been exceeded; (ii) electron loss in the MITLs before magnetic insulation has been established; (iii) flow of electrons emitted by the outer-MITL cathodes after insulation has been established; (iv) closure of MITL anode-cathode (AK) gaps due to expansion of cathode plasma; (v) energy loss to MITL conductors operated at high lineal current densities; (vi) heating of MITL-anode surfaces due to conduction current and deposition of electron kinetic energy; (vii) negative-space-charge-enhanced ion emission from MITL anode surfaces wherever an anode-surface-temperature threshold has been exceeded; and (viii) closure of MITL AK gaps due to expansion of anode plasma. The circuit model is expected to be most accurate when the fractional current loss is small. We have performed circuit simulations of 52 Z experiments conducted with a variety of accelerator configurations and load-impedance time histories. For these experiments, the apparent fractional current loss varies from 0% to 20%. Results of the circuit simulations agree with data acquired on 52 shots to within 2%.

Wideband energy harvesting for piezoelectric devices with linear resonant behavior.

PubMed

Luo, Cheng; Hofmann, Heath F

2011-07-01

In this paper, an active energy harvesting technique for a spring-mass-damper mechanical resonator with piezoelectric electromechanical coupling is investigated. This technique applies a square-wave voltage to the terminals of the device at the same frequency as the mechanical excitation. By controlling the magnitude and phase angle of this voltage, an effective impedance matching can be achieved which maximizes the amount of power extracted from the device. Theoretically, the harvested power can be the maximum possible value, even at off-resonance frequencies. However, in actual implementation, the efficiency of the power electronic circuit limits the amount of power harvested. A power electronic full-bridge converter is built to implement the technique. Experimental results show that the active technique can increase the effective bandwidth by a factor of more than 2, and harvests significantly higher power than rectifier-based circuits at off-resonance frequencies.

Design criteria: data acquisition system for waste tank liquid level gauges and SX Tank Farm thermocouples

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martin, G.E.; Oliver, R.G.

1972-02-17

This design criteria revision (revision 2) will cancel revision 1 and will provide complete functional supervision of the liquid level gauges. A new.counter and an electronic supervisory circuit will be installed in each waste tank liquid level gauge. The electronic supervisory circuit will monitor (via the new counter and a signal from the gauge electronics) cycling of the gauge on a one minute time cycle. This supervisory circuit will fulfill the intent of revision 1 (monitor AC power to the gauge) and, in addition, will supervise all other aspects of the gauge including: the electronics, the drive motor, all sprocketsmore » and chain linkages, and the counter. If a gauge failure should occur, this circuit will remove the +12 volts excitation from the data acquisition system inferface board; and the computer will be programmed to recognize this condition as a gauge failure. (auth)« less

Multifunctional Logic Gate Controlled by Supply Voltage

NASA Technical Reports Server (NTRS)

Stoica, Adrian; Zebulum, Ricardo

2005-01-01

A complementary metal oxide/semiconductor (CMOS) electronic circuit functions as a NAND gate at a power-supply potential (V(sub dd)) of 3.3 V and as NOR gate for V(sub dd) = 1.8 V. In the intermediate V(sub dd) range of 1.8 to 3.3 V, this circuit performs a function intermediate between NAND and NOR with degraded noise margin. Like the circuit of the immediately preceding article, this circuit serves as a demonstration of the evolutionary approach to design of polymorphic electronics -- a technological discipline that emphasizes evolution of the design of a circuit to perform different analog and/or digital functions under different conditions. In this instance, the different conditions are different values of V(sub dd).

European roadmap on superconductive electronics - status and perspectives

NASA Astrophysics Data System (ADS)

Anders, S.; Blamire, M. G.; Buchholz, F.-Im.; Crété, D.-G.; Cristiano, R.; Febvre, P.; Fritzsch, L.; Herr, A.; Il'ichev, E.; Kohlmann, J.; Kunert, J.; Meyer, H.-G.; Niemeyer, J.; Ortlepp, T.; Rogalla, H.; Schurig, T.; Siegel, M.; Stolz, R.; Tarte, E.; ter Brake, H. J. M.; Toepfer, H.; Villegier, J.-C.; Zagoskin, A. M.; Zorin, A. B.

2010-12-01

Executive SummaryFor four decades semiconductor electronics has followed Moore’s law: with each generation of integration the circuit features became smaller, more complex and faster. This development is now reaching a wall so that smaller is no longer any faster. The clock rate has saturated at about 3-5 GHz and the parallel processor approach will soon reach its limit. The prime reason for the limitation the semiconductor electronics experiences is not the switching speed of the individual transistor, but its power dissipation and thus heat. Digital superconductive electronics is a circuit- and device-technology that is inherently faster at much less power dissipation than semiconductor electronics. It makes use of superconductors and Josephson junctions as circuit elements, which can provide extremely fast digital devices in a frequency range - dependent on the material - of hundreds of GHz: for example a flip-flop has been demonstrated that operated at 750 GHz. This digital technique is scalable and follows similar design rules as semiconductor devices. Its very low power dissipation of only 0.1 μW per gate at 100 GHz opens the possibility of three-dimensional integration. Circuits like microprocessors and analogue-to-digital converters for commercial and military applications have been demonstrated. In contrast to semiconductor circuits, the operation of superconducting circuits is based on naturally standardized digital pulses the area of which is exactly the flux quantum Φ0. The flux quantum is also the natural quantization unit for digital-to-analogue and analogue-to-digital converters. The latter application is so precise, that it is being used as voltage standard and that the physical unit ‘Volt’ is defined by means of this standard. Apart from its outstanding features for digital electronics, superconductive electronics provides also the most sensitive sensor for magnetic fields: the Superconducting Quantum Interference Device (SQUID). Amongst many other applications SQUIDs are used as sensors for magnetic heart and brain signals in medical applications, as sensor for geological surveying and food-processing and for non-destructive testing. As amplifiers of electrical signals, SQUIDs can nearly reach the theoretical limit given by Quantum Mechanics. A further important field of application is the detection of very weak signals by ‘transition-edge’ bolometers, superconducting nanowire single-photon detectors, and superconductive tunnel junctions. Their application as radiation detectors in a wide frequency range, from microwaves to X-rays is now standard. The very low losses of superconductors have led to commercial microwave filter designs that are now widely used in the USA in base stations for cellular phones and in military communication applications. The number of demonstrated applications is continuously increasing and there is no area in professional electronics, in which superconductive electronics cannot be applied and surpasses the performance of classical devices. Superconductive electronics has to be cooled to very low temperatures. Whereas this was a bottleneck in the past, cooling techniques have made a huge step forward in recent years: very compact systems with high reliability and a wide range of cooling power are available commercially, from microcoolers of match-box size with milli-Watt cooling power to high-reliability coolers of many Watts of cooling power for satellite applications. Superconductive electronics will not replace semiconductor electronics and similar room-temperature techniques in standard applications, but for those applications which require very high speed, low-power consumption, extreme sensitivity or extremely high precision, superconductive electronics is superior to all other available techniques. To strengthen the European competitiveness in superconductor electronics research projects have to be set-up in the following field: Ultra-sensitive sensing and imaging. Quantum measurement instrumentation. Advanced analogue-to-digital converters. Superconductive electronics technology.

A Charge-Based Low-Power High-SNR Capacitive Sensing Interface Circuit

PubMed Central

Peng, Sheng-Yu; Qureshi, Muhammad S.; Hasler, Paul E.; Basu, Arindam; Degertekin, F. L.

2008-01-01

This paper describes a low-power approach to capacitive sensing that achieves a high signal-to-noise ratio. The circuit is composed of a capacitive feedback charge amplifier and a charge adaptation circuit. Without the adaptation circuit, the charge amplifier only consumes 1 μW to achieve the audio band SNR of 69.34dB. An adaptation scheme using Fowler-Nordheim tunneling and channel hot electron injection mechanisms to stabilize the DC output voltage is demonstrated. This scheme provides a very low frequency pole at 0.2Hz. The measured noise spectrums show that this slow-time scale adaptation does not degrade the circuit performance. The DC path can also be provided by a large feedback resistance without causing extra power consumption. A charge amplifier with a MOS-bipolar pseudo-resistor feedback scheme is interfaced with a capacitive micromachined ultrasonic transducer to demonstrate the feasibility of this approach for ultrasound applications. PMID:18787650

Integrated Power Adapter: Isolated Converter with Integrated Passives and Low Material Stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-09-01

ADEPT Project: CPES at Virginia Tech is developing an extremely efficient power converter that could be used in power adapters for small, lightweight laptops and other types of mobile electronic devices. Power adapters convert electrical energy into useable power for an electronic device, and they currently waste a lot of energy when they are plugged into an outlet to power up. CPES at Virginia Tech is integrating high-density capacitors, new magnetic materials, high-frequency integrated circuits, and a constant-flux transformer to create its efficient power converter. The high-density capacitors enable the power adapter to store more energy. The new magnetic materialsmore » also increase energy storage, and they can be precisely dispensed using a low-cost ink-jet printer which keeps costs down. The high-frequency integrated circuits can handle more power, and they can handle it more efficiently. And, the constant-flux transformer processes a consistent flow of electrical current, which makes the converter more efficient.« less

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

PubMed

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-05-09

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

PubMed Central

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-01-01

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V−1 sec−1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity. PMID:27157914

Enhancement of the output power of terahertz folded waveguide oscillator by two parallel electron beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Ke, E-mail: like.3714@163.com; Cao, Miaomiao, E-mail: mona486@yeah.net; University of Chinese Academy of Sciences, Beijing 100190

2015-11-15

A novel two-beam folded waveguide (FW) oscillator is presented for the purpose of gaining higher power with a small-size circuit compared with the normal FW oscillator. The high-frequency characteristics of the two-beam FW, including dispersion and interaction impedance, were investigated by the numerical simulation and compared with the one-beam FW. The radio-frequency loss of the two-beam FW was also analyzed. A 3-D particle-in-cell code CHIPIC was applied to analyze and optimize the performance of a G-band two-beam FW oscillator. The influences of the distance between the two beam tunnels, beam voltage, the number of periods, magnetic field, radius of beammore » tunnel, and the packing ratio on the circuit performance are investigated in detail. Compared with a one-beam circuit, a larger output power of the two-beam circuit with the same beam power was observed by the simulation. Moreover, the start-oscillation current of two-beam circuit is much lower than the one-beam circuit with better performance. It will favor the miniaturized design of the high-power terahertz oscillator.« less

Investigation of noise insensitive electronic circuits for automotive applications with particular regard to MOS circuits

NASA Astrophysics Data System (ADS)

Gorille, I.

1980-11-01

The application of MOS switching circuits of high complexity in essential automobile systems, such as ignition and injection, was investigated. A bipolar circuit technology, current hogging logic (CHL), was compared to MOS technologies for its competitiveness. The functional requirements of digital automotive systems can only be met by technologies allowing large packing densities and medium speeds. The properties of n-MOS and CMOS are promising whereas the electrical power needed by p-MOS circuits is in general prohibitively large.

Smart Power: New power integrated circuit technologies and their applications

NASA Astrophysics Data System (ADS)

Kuivalainen, Pekka; Pohjonen, Helena; Yli-Pietilae, Timo; Lenkkeri, Jaakko

1992-05-01

Power Integrated Circuits (PIC) is one of the most rapidly growing branches of the semiconductor technology. The PIC markets has been forecast to grow from 660 million dollars in 1990 to 1658 million dollars in 1994. It has even been forecast that at the end of the 1990's the PIC markets would correspond to the value of the whole semiconductor production in 1990. Automotive electronics will play the leading role in the development of the standard PIC's. Integrated motor drivers (36 V/4 A), smart integrated switches (60 V/30 A), solenoid drivers, integrated switch-mode power supplies and regulators are the latest standard devices of the PIC manufactures. ASIC (Application Specific Integrated Circuits) PIC solutions are needed for the same reasons as other ASIC devices: there are no proper standard devices, a company has a lot of application knowhow, which should be kept inside the company, the size of the product must be reduced, and assembly costs are wished to be reduced by decreasing the number of discrete devices. During the next few years the most probable ASIC PIC applications in Finland will be integrated solenoid and motor drivers, an integrated electronic lamp ballast circuit and various sensor interface circuits. Application of the PIC technologies to machines and actuators will strongly be increased all over the world. This means that various PIC's, either standard PIC's or full custom ASIC circuits, will appear in many products which compete with the corresponding Finnish products. Therefore the development of the PIC technologies must be followed carefully in order to immediately be able to apply the latest development in the smart power technologies and their design methods.

47 CFR 36.121 - General.

Code of Federal Regulations, 2013 CFR

2013-10-01

...: Central Office Switching Account 2210. Non-digital Switching Account 2211. Digital Electronic Switching... Account 2231. Circuit Equipment Account 2232. (b) Records of the cost of central office equipment are... directly to that category, e.g., 130 volt power supply provided for circuit equipment. The cost of...

47 CFR 36.121 - General.

Code of Federal Regulations, 2014 CFR

2014-10-01

...: Central Office Switching Account 2210. Non-digital Switching Account 2211. Digital Electronic Switching... Account 2231. Circuit Equipment Account 2232. (b) Records of the cost of central office equipment are... directly to that category, e.g., 130 volt power supply provided for circuit equipment. The cost of...

47 CFR 36.121 - General.

Code of Federal Regulations, 2011 CFR

2011-10-01

...: Central Office Switching Account 2210. Non-digital Switching Account 2211. Digital Electronic Switching... Account 2231. Circuit Equipment Account 2232. (b) Records of the cost of central office equipment are... directly to that category, e.g., 130 volt power supply provided for circuit equipment. The cost of...

47 CFR 36.121 - General.

Code of Federal Regulations, 2010 CFR

2010-10-01

...: Central Office Switching Account 2210. Non-digital Switching Account 2211. Digital Electronic Switching... Account 2231. Circuit Equipment Account 2232. (b) Records of the cost of central office equipment are... directly to that category, e.g., 130 volt power supply provided for circuit equipment. The cost of...

47 CFR 36.121 - General.

Code of Federal Regulations, 2012 CFR

2012-10-01

...: Central Office Switching Account 2210. Non-digital Switching Account 2211. Digital Electronic Switching... Account 2231. Circuit Equipment Account 2232. (b) Records of the cost of central office equipment are... directly to that category, e.g., 130 volt power supply provided for circuit equipment. The cost of...

An Approach to Average Modeling and Simulation of Switch-Mode Systems

ERIC Educational Resources Information Center

Abramovitz, A.

2011-01-01

This paper suggests a pedagogical approach to teaching the subject of average modeling of PWM switch-mode power electronics systems through simulation by general-purpose electronic circuit simulators. The paper discusses the derivation of PSPICE/ORCAD-compatible average models of the switch-mode power stages, their software implementation, and…

TIMING CIRCUIT

DOEpatents

Heyd, J.W.

1959-07-14

An electronic circuit is described for precisely controlling the power delivered to a load from an a-c source, and is particularly useful as a welder timer. The power is delivered in uniform pulses, produced by a thyratron, the number of pulses being controlled by a one-shot multivibrator. The starting pulse is synchronized with the a-c line frequency so that each multivlbrator cycle begins at about the same point in the a-c cycle.

Nanophotonic integrated circuits from nanoresonators grown on silicon.

PubMed

Chen, Roger; Ng, Kar Wei; Ko, Wai Son; Parekh, Devang; Lu, Fanglu; Tran, Thai-Truong D; Li, Kun; Chang-Hasnain, Connie

2014-07-07

Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

Cryogenic applications of commercial electronic components

NASA Astrophysics Data System (ADS)

Buchanan, Ernest D.; Benford, Dominic J.; Forgione, Joshua B.; Harvey Moseley, S.; Wollack, Edward J.

2012-10-01

We have developed a range of techniques useful for constructing analog and digital circuits for operation in a liquid Helium environment (4.2 K), using commercially available low power components. The challenges encountered in designing cryogenic electronics include finding components that can function usefully in the cold and possess low enough power dissipation so as not to heat the systems they are designed to measure. From design, test, and integration perspectives it is useful for components to operate similarly at room and cryogenic temperatures; however this is not a necessity. Some of the circuits presented here have been used successfully in the MUSTANG [1] and in the GISMO [2] camera to build a complete digital to analog multiplexer (which will be referred to as the Cryogenic Address Driver board). Many of the circuit elements described are of a more general nature rather than specific to the Cryogenic Address Driver board, and were studied as a part of a more comprehensive approach to addressing a larger set of cryogenic electronic needs.

Cryogenic Applications of Commercial Electronic Components

NASA Technical Reports Server (NTRS)

Buchanan, Ernest D.; Benford, Dominic J.; Forgione, Joshua B.; Moseley, S. Harvey; Wollack, Edward J.

2012-01-01

We have developed a range of techniques useful for constructing analog and digital circuits for operation in a liquid Helium environment (4.2K), using commercially available low power components. The challenges encountered in designing cryogenic electronics include finding components that can function usefully in the cold and possess low enough power dissipation so as not to heat the systems they are designed to measure. From design, test, and integration perspectives it is useful for components to operate similarly at room and cryogenic temperatures; however this is not a necessity. Some of the circuits presented here have been used successfully in the MUSTANG and in the GISMO camera to build a complete digital to analog multiplexer (which will be referred to as the Cryogenic Address Driver board). Many of the circuit elements described are of a more general nature rather than specific to the Cryogenic Address Driver board, and were studied as a part of a more comprehensive approach to addressing a larger set of cryogenic electronic needs.

Flexible, transparent and exceptionally high power output nanogenerators based on ultrathin ZnO nanoflakes

NASA Astrophysics Data System (ADS)

van Ngoc, Huynh; Kang, Dae Joon

2016-02-01

Novel nanogenerator structures composed of ZnO nanoflakes of less than 10 nm thickness were fabricated using a novel method involving a facile synthetic route and a rational design. The fabricated nanogenerators exhibited a short-circuit current density of 67 μA cm-2, a peak-to-peak open-circuit voltage of 110 V, and an overall output power density exceeding 1.2 mW cm-2, and to the best of our knowledge, these are the best values that have been reported so far in the literature on ZnO-based nanogenerators. We demonstrated that our nanogenerator design could instantaneously power 20 commercial green light-emitting diodes without any additional energy storage processes. Both the facile synthetic route for the ZnO nanoflakes and the straightforward device fabrication process present great scaling potential in order to power mobile and personal electronics that can be used in smart wearable systems, transparent and flexible devices, implantable telemetric energy receivers, electronic emergency equipment, and other self-powered nano/micro devices.Novel nanogenerator structures composed of ZnO nanoflakes of less than 10 nm thickness were fabricated using a novel method involving a facile synthetic route and a rational design. The fabricated nanogenerators exhibited a short-circuit current density of 67 μA cm-2, a peak-to-peak open-circuit voltage of 110 V, and an overall output power density exceeding 1.2 mW cm-2, and to the best of our knowledge, these are the best values that have been reported so far in the literature on ZnO-based nanogenerators. We demonstrated that our nanogenerator design could instantaneously power 20 commercial green light-emitting diodes without any additional energy storage processes. Both the facile synthetic route for the ZnO nanoflakes and the straightforward device fabrication process present great scaling potential in order to power mobile and personal electronics that can be used in smart wearable systems, transparent and flexible devices, implantable telemetric energy receivers, electronic emergency equipment, and other self-powered nano/micro devices. Electronic supplementary information (ESI) available: FE-SEM images of ZnO NFs grown on textile and FTO/glass substrates, XRD patterns of synthesized ZnO NFs, nitrogen adsorption isotherms for ZnO NWs and ZnO NFs, effect of different coating layers on ZnO NFNGs, P(VDF-TrFE) coating on ZnO NFs, output open-circuit voltages of a textile electrostatic NG based on P(VDF-TrFE) coated on ZnO NFs and a textile ZnO NFNG without an insulating layer generated by a sonic wave, NG-based triboelectric effects and PDMS-coated ZnO NF-based NGs grown on an ITO/PET substrate. See DOI: 10.1039/c5nr08324a

LED lamp power management system and method

DOEpatents

Gaines, James; Clauberg, Bernd; Van Erp, Josephus A. M.

2013-03-19

An LED lamp power management system and method including an LED lamp having an LED controller 58; a plurality of LED channels 60 operably connected to the LED controller 58, each of the plurality of LED channels 60 having a channel switch 62 in series with at least one shunted LED circuit 83, the shunted LED circuit 83 having a shunt switch 68 in parallel with an LED source 80. The LED controller 58 reduces power loss in one of the channel switch 62 and the shunt switch 68 when LED lamp electronics power loss (P.sub.loss) exceeds an LED lamp electronics power loss limit (P.sub.lim); and each of the channel switches 62 receives a channel switch control signal 63 from the LED controller 58 and each of the shunt switches 68 receives a shunt switch control signal 69 from the LED controller 58.

Estimation and harvesting of human heat power for wearable electronic devices

NASA Astrophysics Data System (ADS)

Dziurdzia, P.; Brzozowski, I.; Bratek, P.; Gelmuda, W.; Kos, A.

2016-01-01

The paper deals with the issue of self-powered wearable electronic devices that are capable of harvesting free available energy dissipated by the user in the form of human heat. The free energy source is intended to be used as a secondary power source supporting primary battery in a sensor bracelet. The main scope of the article is a presentation of the concept for a measuring setup used to quantitative estimation of heat power sources in different locations over the human body area. The crucial role in the measurements of the human heat plays a thermoelectric module working in the open circuit mode. The results obtained during practical tests are confronted with the requirements of the dedicated thermoelectric generator. A prototype design of a human warmth energy harvester with an ultra-low power DC-DC converter based on the LTC3108 circuit is analysed.

Highly sensitive, self-powered and wearable electronic skin based on pressure-sensitive nanofiber woven fabric sensor.

PubMed

Zhou, Yuman; He, Jianxin; Wang, Hongbo; Qi, Kun; Nan, Nan; You, Xiaolu; Shao, Weili; Wang, Lidan; Ding, Bin; Cui, Shizhong

2017-10-11

The wearable electronic skin with high sensitivity and self-power has shown increasing prospects for applications such as human health monitoring, robotic skin, and intelligent electronic products. In this work, we introduced and demonstrated a design of highly sensitive, self-powered, and wearable electronic skin based on a pressure-sensitive nanofiber woven fabric sensor fabricated by weaving PVDF electrospun yarns of nanofibers coated with PEDOT. Particularly, the nanofiber woven fabric sensor with multi-leveled hierarchical structure, which significantly induced the change in contact area under ultra-low load, showed combined superiority of high sensitivity (18.376 kPa -1 , at ~100 Pa), wide pressure range (0.002-10 kPa), fast response time (15 ms) and better durability (7500 cycles). More importantly, an open-circuit voltage signal of the PPNWF pressure sensor was obtained through applying periodic pressure of 10 kPa, and the output open-circuit voltage exhibited a distinct switching behavior to the applied pressure, indicating the wearable nanofiber woven fabric sensor could be self-powered under an applied pressure. Furthermore, we demonstrated the potential application of this wearable nanofiber woven fabric sensor in electronic skin for health monitoring, human motion detection, and muscle tremor detection.

On-chip remote charger model using plasmonic island circuit

NASA Astrophysics Data System (ADS)

Ali, J.; Youplao, P.; Pornsuwancharoen, N.; Aziz, M. S.; Chiangga, S.; Amiri, I. S.; Punthawanunt, S.; Singh, G.; Yupapin, P.

2018-06-01

We propose the remote charger model using the light fidelity (LiFi) transmission and integrate microring resonator circuit. It consists of the stacked layers of silicon-graphene-gold materials known as a plasmonic island placed at the center of the modified add-drop filter. The input light power from the remote LiFi can enter into the island via a silicon waveguide. The optimized input power is obtained by the coupled micro-lens on the silicon surface. The induced electron mobility generated in the gold layer by the interfacing layer between silicon-graphene. This is the reversed interaction of the whispering gallery mode light power of the microring system, in which the generated power is fed back into the microring circuit. The electron mobility is the required output and obtained at the device ports and characterized for the remote current source applications. The obtained calculation results have shown that the output current of ∼2.5 × 10-11 AW-1, with the gold height of 1.0 μm and the input power of 5.0 W is obtained at the output port, which is shown the potential application for a short range free pace remote charger.

Electrically driven monolithic subwavelength plasmonic interconnect circuits

PubMed Central

Liu, Yang; Zhang, Jiasen; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

2017-01-01

In the post-Moore era, an electrically driven monolithic optoelectronic integrated circuit (OEIC) fabricated from a single material is pursued globally to enable the construction of wafer-scale compact computing systems with powerful processing capabilities and low-power consumption. We report a monolithic plasmonic interconnect circuit (PIC) consisting of a photovoltaic (PV) cascading detector, Au-strip waveguides, and electrically driven surface plasmon polariton (SPP) sources. These components are fabricated from carbon nanotubes (CNTs) via a CMOS (complementary metal-oxide semiconductor)–compatible doping-free technique in the same feature size, which can be reduced to deep-subwavelength scale (~λ/7 to λ/95, λ = 1340 nm) compared with the 14-nm technique node. An OEIC could potentially be configured as a repeater for data transport because of its “photovoltaic” operation mode to transform SPP energy directly into electricity to drive subsequent electronic circuits. Moreover, chip-scale throughput capability has also been demonstrated by fabricating a 20 × 20 PIC array on a 10 mm × 10 mm wafer. Tailoring photonics for monolithic integration with electronics beyond the diffraction limit opens a new era of chip-level nanoscale electronic-photonic systems, introducing a new path to innovate toward much faster, smaller, and cheaper computing frameworks. PMID:29062890

Ultralow-power organic complementary circuits.

PubMed

Klauk, Hagen; Zschieschang, Ute; Pflaum, Jens; Halik, Marcus

2007-02-15

The prospect of using low-temperature processable organic semiconductors to implement transistors, circuits, displays and sensors on arbitrary substrates, such as glass or plastics, offers enormous potential for a wide range of electronic products. Of particular interest are portable devices that can be powered by small batteries or by near-field radio-frequency coupling. The main problem with existing approaches is the large power consumption of conventional organic circuits, which makes battery-powered applications problematic, if not impossible. Here we demonstrate an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc). The monolayer dielectric is grown on patterned metal gates at room temperature and is optimized to provide a large gate capacitance and low gate leakage currents. By combining low-voltage p-channel and n-channel organic thin-film transistors in a complementary circuit design, the static currents are reduced to below 100 pA per logic gate. We have fabricated complementary inverters, NAND gates, and ring oscillators that operate with supply voltages between 1.5 and 3 V and have a static power consumption of less than 1 nW per logic gate. These organic circuits are thus well suited for battery-powered systems such as portable display devices and large-surface sensor networks as well as for radio-frequency identification tags with extended operating range.

A wave shaping approach of ferrite inductors exhibiting hysteresis using orthogonal field bias

NASA Astrophysics Data System (ADS)

Adly, A. A.; Abd-El-Hafiz, S. K.; Mahgoub, A. O.

2018-05-01

Advances in power electronic systems have considerably contributed to a wide spectrum of applications. In most power electronic circuits, inductors play crucial functions. Utilization of ferrite cores becomes a must when large inductances are required. Nevertheless, this results in an additional complexity due to their hysteresis nature. Recently, an efficient approach for modeling vector hysteresis using tri-node Hopfield neural networks (HNNs) has been introduced. This paper presents a wave shaping approach using hollow cylindrical ferrite core inductors having axial and toroidal windings. The approach investigates the possibility of tuning the inductor permeability to minimize circuit harmonics. Details of the approach are given in the paper.

Hybrid measurement chains for the SAS-C spacecraft. [advantages over analog signal processing circuits

NASA Technical Reports Server (NTRS)

Goeke, R. F.

1975-01-01

Spacecraft electronic systems usually demand tight packaging. It was this consideration which initially forced us to consider hybrid circuits for the analog signal processing circuits in the Small Astronomy Satellite-C (SAS-C) scientific payload. We gradually discovered that increased reliability, low power consumption, and reduced program costs all followed. This paper will attempt to share our laboratory's first experience with hybrid circuits and indicate those areas which we found to be important.

Computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems

NASA Astrophysics Data System (ADS)

Ku, Walter H.

1989-05-01

The objectives of this research are to develop analytical and computer aided design techniques for monolithic microwave and millimeter wave integrated circuits (MMIC and MIMIC) and subsystems and to design and fabricate those ICs. Emphasis was placed on heterojunction-based devices, especially the High Electron Mobility Transition (HEMT), for both low noise and medium power microwave and millimeter wave applications. Circuits to be considered include monolithic low noise amplifiers, power amplifiers, and distributed and feedback amplifiers. Interactive computer aided design programs were developed, which include large signal models of InP MISFETs and InGaAs HEMTs. Further, a new unconstrained optimization algorithm POSM was developed and implemented in the general Analysis and Design program for Integrated Circuit (ADIC) for assistance in the design of largesignal nonlinear circuits.

Operation and Maintenance Manual, TECS 18.

DTIC Science & Technology

1978-11-01

width modulated variable output voltage and frequency using a three-phase transistor bridge circuit . Reduced power line electromagnetic interference...Description 3-1 Section II. Circuit Fundamentals 3-1 Section III. System Description 3-2 CHAPTER 4. Protection and Maintenance 4-1 Section I. Internal...Number I-la TECS 18 Electronic Module Location-Evaporator Side 1-3 1-lb TECS 18 Electronic Module Location-Condenser Side 1-4 1-2 Remote Control Panel 1-5

High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes

NASA Astrophysics Data System (ADS)

Thomas, Christopher; Portnoff, Samuel; Spencer, M. G.

2016-01-01

Realization of an 18.6% efficient 4H-silicon carbide (4H-SiC) large area betavoltaic power source using the radioisotope tritium is reported. A 200 nm 4H-SiC P+N junction is used to collect high-energy electrons. The electron source is a titanium tritide (TiH3x) foil, or an integrated titanium tritide region formed by the diffusion of tritium into titanium. The specific activity of the source is directly measured. Dark current measured under short circuit conditions was less than 6.1 pA/cm2. Samples measured with an external tritium foil produced an open circuit voltage of 2.09 V, short circuit current of 75.47 nA/cm2, fill factor of 0.86, and power efficiency of 18.6%. Samples measured with an integrated source produced power efficiencies of 12%. Simulations were done to determine the beta spectrum (modified by self absorption) exiting the source and the electron hole pair generation function in the 4H-SiC. The electron-hole pair generation function in 4H-SiC was modeled as a Gaussian distribution, and a closed form solution of the continuity equation was used to analyze the cell performance. The effective surface recombination velocity in our samples was found to be 105-106 cm/s. Our analysis demonstrated that the surface recombination dominates the performance of a tritium betavoltaic device but that using a thin P+N junction structure can mitigate some of the negative effects.

Electrical/electronics working group summary

NASA Technical Reports Server (NTRS)

Schoenfeld, A. D.

1984-01-01

The electrical/electronics, technology area was considered. It was found that there are no foreseeable circuit or component problems to hinder the implementation of the flywheel energy storage concept. The definition of the major component or technology developments required to permit a technology ready date of 1987 was addressed. Recommendations: motor/generators, suspension electronics, power transfer, power conditioning and distribution, and modeling. An introduction to the area of system engineering is also included.

All-semiconductor metamaterial-based optical circuit board at the microscale

DOE Office of Scientific and Technical Information (OSTI.GOV)

Min, Li; Huang, Lirong, E-mail: lrhuang@hust.edu.cn

2015-07-07

The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arrangingmore » anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.« less

The record of electrical and communication engineering conversazione Tohoku University Volume 63, No. 3

NASA Astrophysics Data System (ADS)

1995-05-01

English abstracts contained are from papers authored by the research staff of the Research Institute of Electrical Communication and the departments of Electrical Engineering, Electrical Communications, Electronic Engineering, and Information Engineering, Tohoku University, which originally appeared in scientific journals in 1994. The abstracts are organized under the following disciplines: electromagnetic theory; physics; fundamental theory of information; communication theory and systems; signal and image processing; systems control; computers; artificial intelligence; recording; acoustics and speech; ultrasonic electronics; antenna, propagation, and transmission; optoelectronics and optical communications; quantum electronics; superconducting materials and applications; magnetic materials and magnetics; semiconductors; electronic materials and parts; electronic devices and integrated circuits; electronic circuits; medical electronics and bionics; measurements and applied electronics; electric power; and miscellaneous.

Fiber-Optic Distribution Of Pulsed Power To Multiple Sensors

NASA Technical Reports Server (NTRS)

Kirkham, Harold

1996-01-01

Optoelectronic systems designed according to time-sharing scheme distribute optical power to multiple integrated-circuit-based sensors in fiber-optic networks. Networks combine flexibility of electronic sensing circuits with advantage of electrical isolation afforded by use of optical fibers instead of electrical conductors to transmit both signals and power. Fiber optics resist corrosion and immune to electromagnetic interference. Sensor networks of this type useful in variety of applications; for example, in monitoring strains in aircraft, buildings, and bridges, and in monitoring and controlling shapes of flexible structures.

Materials Integration and Doping of Carbon Nanotube-based Logic Circuits

NASA Astrophysics Data System (ADS)

Geier, Michael

Over the last 20 years, extensive research into the structure and properties of single- walled carbon nanotube (SWCNT) has elucidated many of the exceptional qualities possessed by SWCNTs, including record-setting tensile strength, excellent chemical stability, distinctive optoelectronic features, and outstanding electronic transport characteristics. In order to exploit these remarkable qualities, many application-specific hurdles must be overcome before the material can be implemented in commercial products. For electronic applications, recent advances in sorting SWCNTs by electronic type have enabled significant progress towards SWCNT-based integrated circuits. Despite these advances, demonstrations of SWCNT-based devices with suitable characteristics for large-scale integrated circuits have been limited. The processing methodologies, materials integration, and mechanistic understanding of electronic properties developed in this dissertation have enabled unprecedented scales of SWCNT-based transistor fabrication and integrated circuit demonstrations. Innovative materials selection and processing methods are at the core of this work and these advances have led to transistors with the necessary transport properties required for modern circuit integration. First, extensive collaborations with other research groups allowed for the exploration of SWCNT thin-film transistors (TFTs) using a wide variety of materials and processing methods such as new dielectric materials, hybrid semiconductor materials systems, and solution-based printing of SWCNT TFTs. These materials were integrated into circuit demonstrations such as NOR and NAND logic gates, voltage-controlled ring oscillators, and D-flip-flops using both rigid and flexible substrates. This dissertation explores strategies for implementing complementary SWCNT-based circuits, which were developed by using local metal gate structures that achieve enhancement-mode p-type and n-type SWCNT TFTs with widely separated and symmetric threshold voltages. Additionally, a novel n-type doping procedure for SWCNT TFTs was also developed utilizing a solution-processed organometallic small molecule to demonstrate the first network top-gated n-type SWCNT TFTs. Lastly, new doping and encapsulation layers were incorporated to stabilize both p-type and n-type SWCNT TFT electronic properties, which enabled the fabrication of large-scale memory circuits. Employing these materials and processing advances has addressed many application specific barriers to commercialization. For instance, the first thin-film SWCNT complementary metal-oxide-semi-conductor (CMOS) logic devices are demonstrated with sub-nanowatt static power consumption and full rail-to-rail voltage transfer characteristics. With the introduction of a new n-type Rh-based molecular dopant, the first SWCNT TFTs are fabricated in top-gate geometries over large areas with high yield. Then by utilizing robust encapsulation methods, stable and uniform electronic performance of both p-type and n-type SWCNT TFTs has been achieved. Based on these complementary SWCNT TFTs, it is possible to simulate, design, and fabricate arrays of low-power static random access memory (SRAM) circuits, achieving large-scale integration for the first time based on solution-processed semiconductors. Together, this work provides a direct pathway for solution processable, large scale, power-efficient advanced integrated logic circuits and systems.

46 CFR 116.202 - Plans and information required.

Code of Federal Regulations, 2011 CFR

2011-10-01

... Safety Center, 2100 2nd St. SW., Stop 7102, Washington, DC 20593-7102, in a written or electronic format... cables, bus-tie cables, feeders, and branch circuit cables; (vi) Power, lighting, and interior communication panelboards with number of circuits and rating of energy consuming devices; (vii) Type and...

46 CFR 116.202 - Plans and information required.

Code of Federal Regulations, 2012 CFR

2012-10-01

... Safety Center, 2100 2nd St. SW., Stop 7102, Washington, DC 20593-7102, in a written or electronic format... cables, bus-tie cables, feeders, and branch circuit cables; (vi) Power, lighting, and interior communication panelboards with number of circuits and rating of energy consuming devices; (vii) Type and...

Operational compatibility of 30-centimeter-diameter ion thruster with integrally regulated solar array power source

NASA Technical Reports Server (NTRS)

Gooder, S. T.

1977-01-01

System tests were performed in which Integrally Regulated Solar Arrays (IRSA's) were used to directly power the beam and accelerator loads of a 30-cm-diameter, electron bombardment, mercury ion thruster. The remaining thruster loads were supplied from conventional power-processing circuits. This combination of IRSA's and conventional circuits formed a hybrid power processor. Thruster performance was evaluated at 3/4- and 1-A beam currents with both the IRSA-hybrid and conventional power processors and was found to be identical for both systems. Power processing is significantly more efficient with the hybrid system. System dynamics and IRSA response to thruster arcs are also examined.

Bio-Nanobattery Development and Characterization

NASA Technical Reports Server (NTRS)

King, Glen C.; Choi, Sang H.; Chu, Sang-Hyon; Kim, Jae-Woo; Watt, Gerald D.; Lillehei, Peter T.; Park, Yeonjoon; Elliott, James R.

2005-01-01

A bio-nanobattery is an electrical energy storage device that utilizes organic materials and processes on an atomic, or nanometer-scale. The bio-nanobattery under development at NASA s Langley Research Center provides new capabilities for electrical power generation, storage, and distribution as compared to conventional power storage systems. Most currently available electronic systems and devices rely on a single, centralized power source to supply electrical power to a specified location in the circuit. As electronic devices and associated components continue to shrink in size towards the nanometer-scale, a single centralized power source becomes impractical. Small systems, such as these, will require distributed power elements to reduce Joule heating, to minimize wiring quantities, and to allow autonomous operation of the various functions performed by the circuit. Our research involves the development and characterization of a bio-nanobattery using ferritins reconstituted with both an iron core (Fe-ferritin) and a cobalt core (Co-ferritin). Synthesis and characterization of the Co-ferritin and Fe-ferritin electrodes were performed, including reducing capability and the half-cell electrical potentials. Electrical output of nearly 0.5 V for the battery cell was measured. Ferritin utilizing other metallic cores were also considered to increase the overall electrical output. Two dimensional ferritin arrays were produced on various substrates to demonstrate the feasibility of a thin-film nano-scaled power storage system for distributed power storage applications. The bio-nanobattery will be ideal for nanometerscaled electronic applications, due to the small size, high energy density, and flexible thin-film structure. A five-cell demonstration article was produced for concept verification and bio-nanobattery characterization. Challenges to be addressed include the development of a multi-layered thin-film, increasing the energy density, dry-cell bionanobattery development, and selection of ferritin core materials to allow the broadest range of applications. The potential applications for the distributed power system include autonomously-operating intelligent chips, flexible thin-film electronic circuits, nanoelectromechanical systems (NEMS), ultra-high density data storage devices, nanoelectromagnetics, quantum electronic devices, biochips, nanorobots for medical applications and mechanical nano-fabrication, etc.

Ultra-Wideband Harmonic Radar for Locating Radio-Frequency Electronics

DTIC Science & Technology

2015-03-01

13  Fig. A-1 Measured S-parameters for the MiniCircuits SLP ...MiniCircuits SLP -1000+ lowpass filters. The relatively weak signal at f0 is increased by 40 dB by the Amplifier Research AR4W1000 power amplifier. The...Fig. A-1 Measured S-parameters for the MiniCircuits SLP -1000+ lowpass filter pair Fig. A-2 Measured S-parameters for the Amplifier Research

Mechanically Flexible and High-Performance CMOS Logic Circuits.

PubMed

Honda, Wataru; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

2015-10-13

Low-power flexible logic circuits are key components required by the next generation of flexible electronic devices. For stable device operation, such components require a high degree of mechanical flexibility and reliability. Here, the mechanical properties of low-power flexible complementary metal-oxide-semiconductor (CMOS) logic circuits including inverter, NAND, and NOR are investigated. To fabricate CMOS circuits on flexible polyimide substrates, carbon nanotube (CNT) network films are used for p-type transistors, whereas amorphous InGaZnO films are used for the n-type transistors. The power consumption and voltage gain of CMOS inverters are <500 pW/mm at Vin = 0 V (<7.5 nW/mm at Vin = 5 V) and >45, respectively. Importantly, bending of the substrate is not found to cause significant changes in the device characteristics. This is also observed to be the case for more complex flexible NAND and NOR logic circuits for bending states with a curvature radius of 2.6 mm. The mechanical stability of these CMOS logic circuits makes them ideal candidates for use in flexible integrated devices.

Mechanically Flexible and High-Performance CMOS Logic Circuits

PubMed Central

Honda, Wataru; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

2015-01-01

Low-power flexible logic circuits are key components required by the next generation of flexible electronic devices. For stable device operation, such components require a high degree of mechanical flexibility and reliability. Here, the mechanical properties of low-power flexible complementary metal–oxide–semiconductor (CMOS) logic circuits including inverter, NAND, and NOR are investigated. To fabricate CMOS circuits on flexible polyimide substrates, carbon nanotube (CNT) network films are used for p-type transistors, whereas amorphous InGaZnO films are used for the n-type transistors. The power consumption and voltage gain of CMOS inverters are <500 pW/mm at Vin = 0 V (<7.5 nW/mm at Vin = 5 V) and >45, respectively. Importantly, bending of the substrate is not found to cause significant changes in the device characteristics. This is also observed to be the case for more complex flexible NAND and NOR logic circuits for bending states with a curvature radius of 2.6 mm. The mechanical stability of these CMOS logic circuits makes them ideal candidates for use in flexible integrated devices. PMID:26459882

Electronics Demonstrated for Low- Temperature Operation

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammond, Ahmad; Gerber, Scott S.

2000-01-01

The operation of electronic systems at cryogenic temperatures is anticipated for many NASA spacecraft, such as planetary explorers and deep space probes. For example, an unheated interplanetary probe launched to explore the rings of Saturn would experience an average temperature near Saturn of about 183 C. Electronics capable of low-temperature operation in the harsh deep space environment also would help improve circuit performance, increase system efficiency, and reduce payload development and launch costs. An ongoing research and development program on low-temperature electronics at the NASA Glenn Research Center at Lewis Field is focusing on the design of efficient power systems that can survive and exploit the advantages of low-temperature environments. The targeted systems, which are mission driven, include converters, inverters, controls, digital circuits, and special-purpose circuits. Initial development efforts successfully demonstrated the low-temperature operation and cold-restart of several direct-current/direct-current (dc/dc) converters based on different types of circuit design, some with superconducting inductors. The table lists some of these dc/dc converters with their properties, and the photograph shows a high-voltage, high-power dc/dc converter designed for an ion propulsion system for low-temperature operation. The development efforts of advanced electronic systems and the supporting technologies for low-temperature operation are being carried out in-house and through collaboration with other Government agencies, industry, and academia. The Low Temperature Electronics Program supports missions and development programs at NASA s Jet Propulsion Laboratory and Goddard Space Flight Center. The developed technologies will be transferred to commercial end users for applications such as satellite infrared sensors and medical diagnostic equipment.

Feedback module for evaluating optical-power stabilization methods

NASA Astrophysics Data System (ADS)

Downing, John

2016-03-01

A feedback module for evaluating the efficacy of optical-power stabilization without thermoelectric coolers (TECs) is described. The module comprises a pickoff optic for sampling a light beam, a photodiode for converting the sample power to electrical current, and a temperature sensor. The components are mounted on an optical bench that makes accurate (0.05°) beam alignment practical as well as providing high thermal-conductivity among the components. The module can be mounted on existing light sources or the components can be incorporated in new designs. Evaluations of optical and electronic stabilization methods are also reported. The optical method combines a novel, weakly reflective, weakly polarizing coating on the pickoff optic with a photodiode and an automatic-power-control (APC) circuit in a closed loop. The shift of emitter wavelength with temperature, coupled with the wavelength-dependent reflectance of the pickoff optic, enable the APC circuit to compensate for temperature errors. In the electronic method, a mixed-signal processor in a quasiclosed loop generates a control signal from temperature and photocurrent inputs and feeds it back to an APC circuit to compensate for temperature errors. These methods result in temperature coefficients less than 20 ppm/°C and relative rms power equal to 05% for the optical method and 0.02% for the electronic method. The later value represents an order of magnitude improvement over rms specifications for cooled, laser-diode modules and a five-fold improvement in wall-plug efficiency is achieved by eliminating TECs.

Extended Pulse-Powered Humidity-Freeze Cycling for Testing Module-Level Power Electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hacke, Peter L; Rodriguez, Miguel; Kempe, Michael D

An EMI suppression capacitor (polypropylene film type) failed by 'popcorning' due to vapor outgassing in pulse powered humidity-freeze cycles. No shorts or shunts could be detected despite mildly corroded metallization visible in the failed capacitor. Humidity-freeze cycling is optimized to break into moisture barriers. However, further studies will be required on additional module level power electronic (MLPE) devices to optimize the stress testing for condensation to precipitate any weakness to short circuiting and other humidity/bias failure modes.

Microwave integrated circuits for space applications

NASA Technical Reports Server (NTRS)

Leonard, Regis F.; Romanofsky, Robert R.

1991-01-01

Monolithic microwave integrated circuits (MMIC), which incorporate all the elements of a microwave circuit on a single semiconductor substrate, offer the potential for drastic reductions in circuit weight and volume and increased reliability, all of which make many new concepts in electronic circuitry for space applications feasible, including phased array antennas. NASA has undertaken an extensive program aimed at development of MMICs for space applications. The first such circuits targeted for development were an extension of work in hybrid (discrete component) technology in support of the Advanced Communication Technology Satellite (ACTS). It focused on power amplifiers, receivers, and switches at ACTS frequencies. More recent work, however, focused on frequencies appropriate for other NASA programs and emphasizes advanced materials in an effort to enhance efficiency, power handling capability, and frequency of operation or noise figure to meet the requirements of space systems.

Development and investigation of silicon converter beta radiation 63Ni isotope

NASA Astrophysics Data System (ADS)

Krasnov, A. A.; Legotin, S. A.; Murashev, V. N.; Didenko, S. I.; Rabinovich, O. I.; Yurchuk, S. Yu; Omelchenko, Yu K.; Yakimov, E. B.; Starkov, V. V.

2016-02-01

In this paper the results of the creation and researching characteristics of, experimental betavoltaic converters (BVC), based on silicon are discussed. It was presented the features of structural and technological performance of planar 2 D- structure of BVC. To study the parameters of the converter stream the beta particles of the radioisotope was simulated by 63Ni electron flux from scanning electron microscope. It was investigated the dependence of the collecting electrons efficiency from the beam energy current-voltage characteristic was measured when irradiated by an electron beam, from which the value of the short-circuit current density equal to 126 nA / cm2 and the value of the open circuit voltage of 150 mV were obtained. The maximum power density at 70 mV is 9.5 nW / cm2, and the conversion efficiency is 2.1%. It was presented the results of experimental studies of the current-voltage characteristics of samples by irradiating a film 63Ni. The values of load voltage 111 mV and short circuit current density of 27 nA / cm2 were obtained. Maximum power density was 1.52 nW / cm2.

Voltage equaliser for Li-Fe battery

NASA Astrophysics Data System (ADS)

Wu, Jinn-Chang; Jou, Hurng-Liahng; Chuang, Ping-Hao

2013-10-01

In this article, a voltage equaliser is proposed for a battery string with four Li-Fe batteries. The proposed voltage equaliser is developed from a flyback converter, which comprises a transformer, a power electronic switch and a resonant clamped circuit. The transformer contains a primary winding and four secondary windings with the same number of turns connected to each battery. The resonant clamped circuit is for recycling the energy of leakage inductance of the transformer and for performing zero-voltage switching (ZVS) of the power electronic switch. When the power electronic switch is switched on, the energy is stored in the transformer; and when the power electronic switch is switched off, the energy stored in the transformer will automatically charge the battery whose voltage is the lowest. In this way, the voltage of individual batteries in the battery string is balanced. The salient features of the proposed voltage equaliser are that only one switch is used, the energy stored in the leakage inductance of the transformer can be recycled and ZVS is obtained. A prototype is developed and tested to verify the performance of the proposed voltage equaliser. The experimental results show that the proposed voltage equaliser achieves the expected performance.

Very high speed integrated circuits - Into the second generation. V - The issues of standardization and technology insertion

NASA Astrophysics Data System (ADS)

Martin, J.

1982-04-01

It is shown that the fulfillment of very high speed integrated circuit (VHSIC) device development goals entails the restructuring of military electronics acquisition policy, standardization which produces the maximum number of systems and subsystems by means of the minimum number of flexible, broad-purpose, high-power semiconductors, and especially the standardization of bus structures incorporating a priorization system. It is expected that the Design Specification Handbook currently under preparation by the VHSIC program office of the DOD will make the design of such systems a task whose complexity is comparable to that of present integrated circuit electronics.

Associative Pattern Recognition In Analog VLSI Circuits

NASA Technical Reports Server (NTRS)

Tawel, Raoul

1995-01-01

Winner-take-all circuit selects best-match stored pattern. Prototype cascadable very-large-scale integrated (VLSI) circuit chips built and tested to demonstrate concept of electronic associative pattern recognition. Based on low-power, sub-threshold analog complementary oxide/semiconductor (CMOS) VLSI circuitry, each chip can store 128 sets (vectors) of 16 analog values (vector components), vectors representing known patterns as diverse as spectra, histograms, graphs, or brightnesses of pixels in images. Chips exploit parallel nature of vector quantization architecture to implement highly parallel processing in relatively simple computational cells. Through collective action, cells classify input pattern in fraction of microsecond while consuming power of few microwatts.

Electronic amplifiers: A compilation

NASA Technical Reports Server (NTRS)

1971-01-01

Several types of amplifiers and amplifier systems are considered. These include preamplifiers, high power amplifiers, buffer and isolation amplifiers, amplifier circuits, and general purpose amplifiers.

Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

NASA Astrophysics Data System (ADS)

England, Troy; Lilly, Michael; Curry, Matthew; Carr, Stephen; Carroll, Malcolm

Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will introduce two new amplifier topologies that provide excellent gain versus power tradeoffs using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The AC HBT allows in-situ adjustment of power dissipation during an experiment and can provide gain in the millikelvin temperature regime while dissipating less than 500 nW. The AC Current Amplifier maximizes gain at nearly 800 A/A. We will also show results of using these amplifiers with SETs at 4 K. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout.

Chaotic behaviors of operational amplifiers.

PubMed

Yim, Geo-Su; Ryu, Jung-Wan; Park, Young-Jai; Rim, Sunghwan; Lee, Soo-Young; Kye, Won-Ho; Kim, Chil-Min

2004-04-01

We investigate nonlinear dynamical behaviors of operational amplifiers. When the output terminal of an operational amplifier is connected to the inverting input terminal, the circuit exhibits period-doubling bifurcation, chaos, and periodic windows, depending on the voltages of the positive and the negative power supplies. We study these nonlinear dynamical characteristics of this electronic circuit experimentally.

78 FR 75360 - Notice of Issuance of Final Determination Concerning Certain Ethernet Switches

Federal Register 2010, 2011, 2012, 2013, 2014

2013-12-11

... printed circuit board assembly (``PCBA''), chassis, top cover, power supply, and fans. The switches... printed circuit board is populated with various electronic components to make a PCBA. 2. The PCBA is... Singapore. You argue that without the EOS software, the units exported from Singapore lack the intelligence...

Measurement, modeling, and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout

NASA Astrophysics Data System (ADS)

England, Troy; Curry, Matthew; Carr, Steve; Swartzentruber, Brian; Lilly, Michael; Bishop, Nathan; Carrol, Malcolm

2015-03-01

Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance typical of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will discuss calibration data, as well as modeling and simulation of cryogenic silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) circuits connected to a silicon SET and operating at 4 K. We find a continuum of solutions from simple, single-HBT amplifiers to more complex, multi-HBT circuits suitable for integration, with varying noise levels and power vs. bandwidth tradeoffs. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

A miniature electronic nose system based on an MWNT-polymer microsensor array and a low-power signal-processing chip.

PubMed

Chiu, Shih-Wen; Wu, Hsiang-Chiu; Chou, Ting-I; Chen, Hsin; Tang, Kea-Tiong

2014-06-01

This article introduces a power-efficient, miniature electronic nose (e-nose) system. The e-nose system primarily comprises two self-developed chips, a multiple-walled carbon nanotube (MWNT)-polymer based microsensor array, and a low-power signal-processing chip. The microsensor array was fabricated on a silicon wafer by using standard photolithography technology. The microsensor array comprised eight interdigitated electrodes surrounded by SU-8 "walls," which restrained the material-solvent liquid in a defined area of 650 × 760 μm(2). To achieve a reliable sensor-manufacturing process, we used a two-layer deposition method, coating the MWNTs and polymer film as the first and second layers, respectively. The low-power signal-processing chip included array data acquisition circuits and a signal-processing core. The MWNT-polymer microsensor array can directly connect with array data acquisition circuits, which comprise sensor interface circuitry and an analog-to-digital converter; the signal-processing core consists of memory and a microprocessor. The core executes the program, classifying the odor data received from the array data acquisition circuits. The low-power signal-processing chip was designed and fabricated using the Taiwan Semiconductor Manufacturing Company 0.18-μm 1P6M standard complementary metal oxide semiconductor process. The chip consumes only 1.05 mW of power at supply voltages of 1 and 1.8 V for the array data acquisition circuits and the signal-processing core, respectively. The miniature e-nose system, which used a microsensor array, a low-power signal-processing chip, and an embedded k-nearest-neighbor-based pattern recognition algorithm, was developed as a prototype that successfully recognized the complex odors of tincture, sorghum wine, sake, whisky, and vodka.

Photonic Integrated Circuits

NASA Technical Reports Server (NTRS)

Krainak, Michael; Merritt, Scott

2016-01-01

Integrated photonics generally is the integration of multiple lithographically defined photonic and electronic components and devices (e.g. lasers, detectors, waveguides passive structures, modulators, electronic control and optical interconnects) on a single platform with nanometer-scale feature sizes. The development of photonic integrated circuits permits size, weight, power and cost reductions for spacecraft microprocessors, optical communication, processor buses, advanced data processing, and integrated optic science instrument optical systems, subsystems and components. This is particularly critical for small spacecraft platforms. We will give an overview of some NASA applications for integrated photonics.

Developing a 300C Analog Tool for EGS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Normann, Randy

2015-03-23

This paper covers the development of a 300°C geothermal well monitoring tool for supporting future EGS (enhanced geothermal systems) power production. This is the first of 3 tools planed. This is an analog tool designed for monitoring well pressure and temperature. There is discussion on 3 different circuit topologies and the development of the supporting surface electronics and software. There is information on testing electronic circuits and component. One of the major components is the cable used to connect the analog tool to the surface.

Reversible Conversion of Dominant Polarity in Ambipolar Polymer/Graphene Oxide Hybrids

PubMed Central

Zhou, Ye; Han, Su-Ting; Sonar, Prashant; Ma, Xinlei; Chen, Jihua; Zheng, Zijian; Roy, V. A. L.

2015-01-01

The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits. PMID:25801827

Application of a high-energy-density permanent magnet material in underwater systems

NASA Astrophysics Data System (ADS)

Cho, C. P.; Egan, C.; Krol, W. P.

1996-06-01

This paper addresses the application of high-energy-density permanent magnet (PM) technology to (1) the brushless, axial-field PM motor and (2) the integrated electric motor/pump system for under-water applications. Finite-element analysis and lumped parameter magnetic circuit analysis were used to calculate motor parameters and performance characteristics and to conduct tradeoff studies. Compact, efficient, reliable, and quiet underwater systems are attainable with the development of high-energy-density PM material, power electronic devices, and power integrated-circuit technology.

A Concept for Power Cycling the Electronics of CALICE-AHCAL with the Train Structure of ILC

NASA Astrophysics Data System (ADS)

Göottlicher, Peter; The Calice-Collaboration

Particle flow algorithm calorimetry requires high granularity three-dimensional readout. The tight power requirement of 40 μW/channel is reached by enabling readout ASIC currents only during beam delivery, corresponding to a 1% duty cycle. EMI noise caused by current switching needs to be minimized by the power system and this paper presents ideas, simulations and first measurements for minimizing disturbances. A carefully design of circuits, printed circuit boards, grounding scheme and use of floating supplies allows current loops to be closed locally, stabilized voltages and minimal currents in the metal structures.

Method for reworkable packaging of high speed, low electrical parasitic power electronics modules through gate drive integration

DOEpatents

Passmore, Brandon; Cole, Zach; Whitaker, Bret; Barkley, Adam; McNutt, Ty; Lostetter, Alexander

2016-08-02

A multichip power module directly connecting the busboard to a printed-circuit board that is attached to the power substrate enabling extremely low loop inductance for extreme environments such as high temperature operation. Wire bond interconnections are taught from the power die directly to the busboard further enabling enable low parasitic interconnections. Integration of on-board high frequency bus capacitors provide extremely low loop inductance. An extreme environment gate driver board allows close physical proximity of gate driver and power stage to reduce overall volume and reduce impedance in the control circuit. Parallel spring-loaded pin gate driver PCB connections allows a reliable and reworkable power module to gate driver interconnections.

Integrated logic circuits using single-atom transistors

PubMed Central

Mol, J. A.; Verduijn, J.; Levine, R. D.; Remacle, F.

2011-01-01

Scaling down the size of computing circuits is about to reach the limitations imposed by the discrete atomic structure of matter. Reducing the power requirements and thereby dissipation of integrated circuits is also essential. New paradigms are needed to sustain the rate of progress that society has become used to. Single-atom transistors, SATs, cascaded in a circuit are proposed as a promising route that is compatible with existing technology. We demonstrate the use of quantum degrees of freedom to perform logic operations in a complementary-metal–oxide–semiconductor device. Each SAT performs multilevel logic by electrically addressing the electronic states of a dopant atom. A single electron transistor decodes the physical multivalued output into the conventional binary output. A robust scalable circuit of two concatenated full adders is reported, where by utilizing charge and quantum degrees of freedom, the functionality of the transistor is pushed far beyond that of a simple switch. PMID:21808050

Power SEMICONDUCTORS—STATE of Art and Future Trends

NASA Astrophysics Data System (ADS)

Benda, Vitezslav

2011-06-01

The importance of effective energy conversion control, including power generation from renewable and environmentally clean energy sources, increases due to rising energy demand. Power electronic systems for controlling and converting electrical energy have become the workhorse of modern society in many applications, both in industry and at home. Power electronics plays a very important role in traction and can be considered as brawns of robotics and automated manufacturing systems. Power semiconductor devices are the key electronic components used in power electronic systems. Advances in power semiconductor technology have improved the efficiency, size, weight and cost of power electronic systems. At present, IGCTs, IGBTs, and MOSFETs represent modern switching devices. Power integrated circuits (PIC) have been developed for the use of power converters for portable, automotive and aerospace applications. For advanced applications, new materials (SiC and GaN) have been introduced. This paper reviews the state of these devices and elaborates on their potentials in terms of higher voltages, higher power density, and better switching performance.

Pulse width modulated push-pull driven parallel resonant converter with active free-wheel

DOEpatents

Reass, William A.; Schrank, Louis

2004-06-22

An apparatus and method for high frequency alternating power generation to control kilowatts of supplied power in microseconds. The present invention includes a means for energy storage, push-pull switching means, control electronics, transformer means, resonant circuitry and means for excess energy recovery, all in electrical communication. A push-pull circuit works synchronously with a force commutated free-wheel transistor to provide current pulses to a transformer. A change in the conduction angle of the push-pull circuit changes the amount of energy coupled into the transformer's secondary oscillating circuit, thereby altering the induced secondary resonating voltage. At the end of each pulse, the force commutated free-wheel transistor causes residual excess energy in the primary circuit to be transmitted back to the storage capacitor for later use.

Integrated testing system FiTest for diagnosis of PCBA

NASA Astrophysics Data System (ADS)

Bogdan, Arkadiusz; Lesniak, Adam

2016-12-01

This article presents the innovative integrated testing system FiTest for automatic, quick inspection of printed circuit board assemblies (PCBA) manufactured in Surface Mount Technology (SMT). Integration of Automatic Optical Inspection (AOI), In-Circuit Tests (ICT) and Functional Circuit Tests (FCT) resulted in universal hardware platform for testing variety of electronic circuits. The platform provides increased test coverage, decreased level of false calls and optimization of test duration. The platform is equipped with powerful algorithms performing tests in a stable and repetitive way and providing effective management of diagnosis.

Electronic Components and Circuits for Extreme Temperature Environments

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad; Dickman, John E.; Gerber, Scott

2003-01-01

Planetary exploration missions and deep space probes require electrical power management and control systems that are capable of efficient and reliable operation in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures will not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures; thereby reducing system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results from better behavior and tolerance in the electrical and thermal properties of semiconductor and dielectric materials at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial-off-the-shelf as well as developed components that are being characterized include switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being investigated for potential use in low temperature applications. An overview of the NASA Glenn Research Center Low Temperature Electronic Program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained through in-house component and circuit testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.

Using mathematical software to design power electronic converters

NASA Astrophysics Data System (ADS)

Hinov, Nikolay; Hranov, Tsveti

2017-12-01

In the paper is presented mathematical software, which was used for design of power electronic devices. Examined to different example, which are applied to designing electronic converters. In this way, it is possible to play different combinations of the circuit elements by simple means, thus optimizing according to certain criteria and limitations. Free software with a simple and intuitive interface is selected. No special user training is required to work with it and no further training is required. The use of mathematical software greatly facilitates the design, assists and makes it attractive and accessible to a wider range of students and specialists in power electronics training.

Integration of Thermal Energy Harvesting in Semi-Active Piezoelectric Shunt-Damping Systems

NASA Astrophysics Data System (ADS)

Lubieniecki, Michał; Uhl, Tadeusz

2015-01-01

The opportunities to energize a broad range of devices by use of energy available almost anywhere and in many forms are almost unlimited. A major advantage of energy harvesting is the manufacture of small autonomous electronic devices with no need for power supply and maintenance. Shunt damping circuits, although unfavorably affected by the size and mass of bulky coil inductors, started to base on synthetic inductors losing their passivity. In this paper we report a study of the feasibility of powering shunt damping circuits by use of thermal energy otherwise irrevocably lost from a bearing. The heat generated in the bearing is converted thermoelectrically into electric energy which is then used to power synthetic inductance circuitry. We show that the power demand of such circuit can be satisfied by use of a thermoelectric generator paired with a moderately loaded bearing.

Competencies for Articulation: Electronics.

ERIC Educational Resources Information Center

Southeast Community Coll., Lincoln, NE.

Designed to help articulate vocational education student progress from one level of training to another and to employment, this electronics education guide lists competencies for soldering; performing basic operations with test equipment; servicing basic logic circuits; servicing DC power supplies; servicing solid state amplifiers; and servicing…

Deep Charging Evaluation of Satellite Power and Communication System Components

NASA Technical Reports Server (NTRS)

Schneider, T. A.; Vaughn, J. A.; Chu, B.; Wong, F.; Gardiner, G.; Wright, K. H.; Phillips, B.

2016-01-01

A set of deep charging tests has been carried out by NASA's Marshall Space Flight Center on subscale flight-like samples developed by Space Systems/Loral, LLC. The samples, which included solar array wire coupons, a photovoltaic cell coupon, and a coaxial microwave transmission cable, were placed in passive and active (powered) circuit configurations and exposed to electron radiation. The energy of the electron radiation was chosen to deeply penetrate insulating (dielectric) materials on each sample. Each circuit configuration was monitored to determine if potentially damaging electrostatic discharge events (arcs) were developed on the coupon as a result of deep charging. The motivation for the test, along with charging levels, experimental setup, sample details, and results will be discussed.

Microelectronic bioinstrumentation systems

NASA Technical Reports Server (NTRS)

Ko, W. H.

1976-01-01

Progress was made in the development of an RF cage, a single channel RF powered ECG telemetry system, and a three channel RF powered ECG, aortic blood pressure, and body temperature telemetry system. Encapsulation materials for chronic implantation of electronic circuits in the body were also evaluated.

Annual Summary Report on Thermionic Cathode Project.

DTIC Science & Technology

1986-01-09

Voltage Operation The electron gun cathode is driven negative by a high voltageRadiation pulse modulator in the circuit of Figure 3-1. Typical current...tungsten filament. The bombardment heating system is stabilized by a feed- back control circuit . The power required to heat tne cathode is 315 W bom...project. The primary purpose of the first phase was to develop the bombardment heating circuit used to heat the LaB 6 cathode, and to test the beam

Engineering Design Handbook: Reliable Military Electronics

DTIC Science & Technology

1976-01-15

p. 30. CBS-Hytron: "I..ow-o::stPower Trall8istors," E1a::Drnic Design, 1 Nov. 1956, p. 24. Chang, C. M.: "An NPN High-Power Fast Germanium Col:e...34Monovibrator Has Fast Recovery Time," Electronics, Dec. 1957, p. 158. Carlson, A W. : "Junction Transistor Counters," EledronicDesign, 1 March 1957, p. 28...Method Makes Fast Pulses in Transistor Circuits," Electronic Design, 28 May 1958, p. 44. Stassior, R. A : "Pulse Applications cf a Diffused-Meltback

Liquid-Metal-Based Super-Stretchable and Structure-Designable Triboelectric Nanogenerator for Wearable Electronics.

PubMed

Yang, Yanqin; Sun, Na; Wen, Zhen; Cheng, Ping; Zheng, Hechuang; Shao, Huiyun; Xia, Yujian; Chen, Chen; Lan, Huiwen; Xie, Xinkai; Zhou, Changjie; Zhong, Jun; Sun, Xuhui; Lee, Shuit-Tong

2018-02-27

The rapid advancement of intelligent wearable electronics imposes the emergent requirement for power sources that are deformable, compliant, and stretchable. Power sources with these characteristics are difficult and challenging to achieve. The use of liquid metals as electrodes may provide a viable strategy to produce such power sources. In this work, we propose a liquid-metal-based triboelectric nanogenerator (LM-TENG) by employing Galinstan as the electrode and silicone rubber as the triboelectric and encapsulation layer. The small Young's modulus of the liquid metal ensures the electrode remains continuously conductive under deformations, stretching to a strain as large as ∼300%. The surface oxide layer of Galinstan effectively prevents the liquid Galinstan electrode from further oxidization and permeation into silicone rubber, yielding outstanding device stability. Operating in the single-electrode mode at 3 Hz, the LM-TENG with an area of 6 × 3 cm 2 produces an open-circuit voltage of 354.5 V, transferred short-circuit charge of 123.2 nC, short-circuit current of 15.6 μA, and average power density of 8.43 mW/m 2 , which represent outstanding performance values for TENGs. Further, the LM-TENG maintains stable performance under various deformations, such as stretching, folding, and twisting. LM-TENGs in different forms, such as bulk-shaped, bracelet-like, and textile-like, are all able to harvest mechanical energy from human walking, arm shaking, or hand patting to sustainably drive wearable electronic devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Dinesh; Thapliyal, Himanshu; Mohammad, Azhar

Differential Power Analysis (DPA) attack is considered to be a main threat while designing cryptographic processors. In cryptographic algorithms like DES and AES, S-Box is used to indeterminate the relationship between the keys and the cipher texts. However, S-box is prone to DPA attack due to its high power consumption. In this paper, we are implementing an energy-efficient 8-bit S-Box circuit using our proposed Symmetric Pass Gate Adiabatic Logic (SPGAL). SPGAL is energy-efficient as compared to the existing DPAresistant adiabatic and non-adiabatic logic families. SPGAL is energy-efficient due to reduction of non-adiabatic loss during the evaluate phase of the outputs.more » Further, the S-Box circuit implemented using SPGAL is resistant to DPA attacks. The results are verified through SPICE simulations in 180nm technology. SPICE simulations show that the SPGAL based S-Box circuit saves upto 92% and 67% of energy as compared to the conventional CMOS and Secured Quasi-Adiabatic Logic (SQAL) based S-Box circuit. From the simulation results, it is evident that the SPGAL based circuits are energy-efficient as compared to the existing DPAresistant adiabatic and non-adiabatic logic families. In nutshell, SPGAL based gates can be used to build secure hardware for lowpower portable electronic devices and Internet-of-Things (IoT) based electronic devices.« less

Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids

DOE PAGES

Zhou, Ye; Han, Su -Ting; Sonar, Prashant; ...

2015-03-24

The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. Wemore » conclude that this hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.« less

High frequency x-ray generator basics.

PubMed

Sobol, Wlad T

2002-02-01

The purpose of this paper is to present basic functional principles of high frequency x-ray generators. The emphasis is put on physical concepts that determine the engineering solutions to the problem of efficient generation and control of high voltage power required to drive the x-ray tube. The physics of magnetically coupled circuits is discussed first, as a background for the discussion of engineering issues related to high-frequency power transformer design. Attention is paid to physical processes that influence such factors as size, efficiency, and reliability of a high voltage power transformer. The basic electrical circuit of a high frequency generator is analyzed next, with focus on functional principles. This section investigates the role and function of basic components, such as power supply, inverter, and voltage doubler. Essential electronic circuits of generator control are then examined, including regulation of voltage, current and timing of electrical power delivery to the x-ray tube. Finally, issues related to efficient feedback control, including basic design of the AEC circuitry are reviewed.

Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device.

PubMed

Park, Sangsu; Noh, Jinwoo; Choo, Myung-Lae; Sheri, Ahmad Muqeem; Chang, Man; Kim, Young-Bae; Kim, Chang Jung; Jeon, Moongu; Lee, Byung-Geun; Lee, Byoung Hun; Hwang, Hyunsang

2013-09-27

Efforts to develop scalable learning algorithms for implementation of networks of spiking neurons in silicon have been hindered by the considerable footprints of learning circuits, which grow as the number of synapses increases. Recent developments in nanotechnologies provide an extremely compact device with low-power consumption.In particular, nanoscale resistive switching devices (resistive random-access memory (RRAM)) are regarded as a promising solution for implementation of biological synapses due to their nanoscale dimensions, capacity to store multiple bits and the low energy required to operate distinct states. In this paper, we report the fabrication, modeling and implementation of nanoscale RRAM with multi-level storage capability for an electronic synapse device. In addition, we first experimentally demonstrate the learning capabilities and predictable performance by a neuromorphic circuit composed of a nanoscale 1 kbit RRAM cross-point array of synapses and complementary metal-oxide-semiconductor neuron circuits. These developments open up possibilities for the development of ubiquitous ultra-dense, ultra-low-power cognitive computers.

Embedded electronics for a 64-channel wireless brain implant

NASA Astrophysics Data System (ADS)

Burgert, Johann D.; Malasek, Jan; Martel, Sylvain M.; Wiseman, Colette; Fofonoff, Timothy; Dyer, Robert; Hunter, Ian W.; Hatsopoulos, Nicholas; Donoghue, John

2001-10-01

The Telemetric Electrode Array System (TEAS) is a surgically implantable device for the study of neural activity in the brain. An 8x8 array of electrodes collects intra-cortical neural signals and connects them to an analog front end. The front end amplifies and digitizes these microvolt-level signals with 12 bits of resolution and at 31KHz per channel. Peak detection is used to extract the information carrying features of these signals, which are transmitted over a Bluetooth-based radio link at 725 Kbit/sec. The electrode array is made up of 1mm tall, 60-micron square electrodes spaced 500 microns tip-to-tip. A flex circuit connector provides mechanical isolation between the brain and the electronics, which are mounted to the cranium. Power consumption and management is a critical aspect of the design. The entire system must operate off a surgically implantable battery. With this power source, the system must provide the functionality of a wireless, 64-channel oscilloscope for several hours. The system also provides a low-power sleep mode during which the battery can be inductively charged. Power dissipation and biocompatibility issues also affect the design of the electronics for the probe. The electronics system must fit between the skull and the skin of the test subject. Thus, circuit miniaturization and microassembly techniques are essential to construct the probe's electronics.

Capillarics: pre-programmed, self-powered microfluidic circuits built from capillary elements.

PubMed

Safavieh, Roozbeh; Juncker, David

2013-11-07

Microfluidic capillary systems employ surface tension effects to manipulate liquids, and are thus self-powered and self-regulated as liquid handling is structurally and chemically encoded in microscale conduits. However, capillary systems have been limited to perform simple fluidic operations. Here, we introduce complex capillary flow circuits that encode sequential flow of multiple liquids with distinct flow rates and flow reversal. We first introduce two novel microfluidic capillary elements including (i) retention burst valves and (ii) robust low aspect ratio trigger valves. These elements are combined with flow resistors, capillary retention valves, capillary pumps, and open and closed reservoirs to build a capillary circuit that, following sample addition, autonomously delivers a defined sequence of multiple chemicals according to a preprogrammed and predetermined flow rate and time. Such a circuit was used to measure the concentration of C-reactive protein. This work illustrates that as in electronics, complex capillary circuits may be built by combining simple capillary elements. We define such circuits as "capillarics", and introduce symbolic representations. We believe that more complex circuits will become possible by expanding the library of building elements and formulating abstract design rules.

Noise in Neuronal and Electronic Circuits: A General Modeling Framework and Non-Monte Carlo Simulation Techniques.

PubMed

Kilinc, Deniz; Demir, Alper

2017-08-01

The brain is extremely energy efficient and remarkably robust in what it does despite the considerable variability and noise caused by the stochastic mechanisms in neurons and synapses. Computational modeling is a powerful tool that can help us gain insight into this important aspect of brain mechanism. A deep understanding and computational design tools can help develop robust neuromorphic electronic circuits and hybrid neuroelectronic systems. In this paper, we present a general modeling framework for biological neuronal circuits that systematically captures the nonstationary stochastic behavior of ion channels and synaptic processes. In this framework, fine-grained, discrete-state, continuous-time Markov chain models of both ion channels and synaptic processes are treated in a unified manner. Our modeling framework features a mechanism for the automatic generation of the corresponding coarse-grained, continuous-state, continuous-time stochastic differential equation models for neuronal variability and noise. Furthermore, we repurpose non-Monte Carlo noise analysis techniques, which were previously developed for analog electronic circuits, for the stochastic characterization of neuronal circuits both in time and frequency domain. We verify that the fast non-Monte Carlo analysis methods produce results with the same accuracy as computationally expensive Monte Carlo simulations. We have implemented the proposed techniques in a prototype simulator, where both biological neuronal and analog electronic circuits can be simulated together in a coupled manner.

High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thomas, Christopher; Portnoff, Samuel; Spencer, M. G.

Realization of an 18.6% efficient 4H-silicon carbide (4H-SiC) large area betavoltaic power source using the radioisotope tritium is reported. A 200 nm 4H-SiC P{sup +}N junction is used to collect high-energy electrons. The electron source is a titanium tritide (TiH{sup 3}{sub x}) foil, or an integrated titanium tritide region formed by the diffusion of tritium into titanium. The specific activity of the source is directly measured. Dark current measured under short circuit conditions was less than 6.1 pA/cm{sup 2}. Samples measured with an external tritium foil produced an open circuit voltage of 2.09 V, short circuit current of 75.47 nA/cm{sup 2}, fill factor of 0.86,more » and power efficiency of 18.6%. Samples measured with an integrated source produced power efficiencies of 12%. Simulations were done to determine the beta spectrum (modified by self absorption) exiting the source and the electron hole pair generation function in the 4H-SiC. The electron-hole pair generation function in 4H-SiC was modeled as a Gaussian distribution, and a closed form solution of the continuity equation was used to analyze the cell performance. The effective surface recombination velocity in our samples was found to be 10{sup 5}–10{sup 6 }cm/s. Our analysis demonstrated that the surface recombination dominates the performance of a tritium betavoltaic device but that using a thin P{sup +}N junction structure can mitigate some of the negative effects.« less

Inverted organic photovoltaic device with a new electron transport layer

NASA Astrophysics Data System (ADS)

Kim, Hyeong Pil; Yusoff, Abd Rashid bin Mohd; Kim, Hyo Min; Lee, Hee Jae; Seo, Gi Jun; Jang, Jin

2014-03-01

We demonstrate that there is a new solution-processed electron transport layer, lithium-doped zinc oxide (LZO), with high-performance inverted organic photovoltaic device. The device exhibits a fill factor of 68.58%, an open circuit voltage of 0.86 V, a short-circuit current density of -9.35 cm/mA2 along with 5.49% power conversion efficiency. In addition, we studied the performance of blend ratio dependence on inverted organic photovoltaics. Our device also demonstrates a long stability shelf life over 4 weeks in air.

The ac power line protection for an IEEE 587 Class B environment

NASA Technical Reports Server (NTRS)

Roehr, W. D.; Clark, O. M.

1984-01-01

The 587B series of protectors are unique, low clamping voltage transient suppressors to protect ac-powered equipment from the 6000V peak open-circuit voltage and 3000A short circuit current as defined in IEEE standard 587 for Category B transients. The devices, which incorporate multiple-stage solid-state protector components, were specifically designed to operate under multiple exposures to maximum threat levels in this severe environment. The output voltage peaks are limited to 350V under maximum threat conditions for a 120V ac power line, thus providing adequate protection to vulnerable electronic equipment. The principle of operation and test performance data is discussed.

Microfabrication and Cold Testing of Copper Circuits for a 50 Watt, 220 GHz Traveling Wave Tube

DTIC Science & Technology

2013-01-11

Dobbs, R. J., Joye, C. D., Kory, C. L., Neil, G. R., Park, G. S ., Park, J. H., Temkin, R. J., “Vacuum electronic high power terahertz sources,” Trans...Steer, B., Hyttinen, M., Roitman, A., Horoyski, P., Smith, G. M., Bolton, D. R., Cruickshank, P. A. S ., Robertson, D. A., "Compact, high power EIK...precise circuits with high yield. It was found that slight beam tunnel misalignment can cause very strong stopbands to appear in the operating band

DEAL annual report.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Misra, Shashank

2017-11-01

The digital electronics at the atomic limit (DEAL) project seeks to leverage Sandia's atomic-precision fabrication capability to realize the theorized orders-of-magnitude improvement in operating voltage for tunnel field effect transistors (TFETs) compared to CMOS. Not only are low-power digital circuits a critical element of many national security systems (e.g. satellites), TFETs can perform circuit functions inaccessible to CMOS (e.g. polymorphism).

10 CFR 431.324 - Uniform test method for the measurement of energy efficiency and standby mode energy consumption...

Code of Federal Regulations, 2014 CFR

2014-01-01

... extinguishing the lamp is impossible or for low-frequency electronic ballasts, the following alternative... (V), and current, using an ammeter (A) connected to the ballast in accordance with the circuit shown... ballast in accordance with the circuit shown in Figure 2. ER09MR10.006 (iii) Power Line Carrier (PLC...

10 CFR 431.324 - Uniform test method for the measurement of energy efficiency and standby mode energy consumption...

Code of Federal Regulations, 2013 CFR

2013-01-01

... extinguishing the lamp is impossible or for low-frequency electronic ballasts, the following alternative... (V), and current, using an ammeter (A) connected to the ballast in accordance with the circuit shown... ballast in accordance with the circuit shown in Figure 2. ER09MR10.006 (iii) Power Line Carrier (PLC...

10 CFR 431.324 - Uniform test method for the measurement of energy efficiency and standby mode energy consumption...

Code of Federal Regulations, 2012 CFR

2012-01-01

... extinguishing the lamp is impossible or for low-frequency electronic ballasts, the following alternative... (V), and current, using an ammeter (A) connected to the ballast in accordance with the circuit shown... ballast in accordance with the circuit shown in Figure 2. ER09MR10.006 (iii) Power Line Carrier (PLC...

Integrated three-dimensional module heat exchanger for power electronics cooling

DOEpatents

Bennion, Kevin; Lustbader, Jason

2013-09-24

Embodiments discussed herein are directed to a power semiconductor packaging that removes heat from a semiconductor package through one or more cooling zones that are located in a laterally oriented position with respect to the semiconductor package. Additional embodiments are directed to circuit elements that are constructed from one or more modular power semiconductor packages.

The SPS interference problem-electronic system effects and mitigation techniques

NASA Technical Reports Server (NTRS)

Juroshek, J. R.

1980-01-01

The potential for interference between solar power satellites (SPS) and other Earth satellite operations was examined along with interference problems involving specific electronic devices. Conclusions indicate that interference is likely in the 2500 MHz to 2690 MHz direct broadcast satellite band adjacent to SPS. Estimates of the adjacent channel noise from SPS in this band are as high as -124 dBc/4 kHz and -100 dBc/MHz, where dBc represents decibels relative to the total power in the fundamental. A second potential problem is the 7350 MHz, 3d harmonic from SPS that falls within the 7300 MHz to 7450 MHz space to Earth, government, satellite assignment. Catastrophic failures can be produced in integrated circuits when the microwave power levels coupled into inputs and power leads reach 1 to 100 watts. The failures are typically due to bonding wire melting, metallization failures, and junction shorting. Nondestructive interaction or interference, however, generally occurs with coupled power levels of the order of 10 milliwatts. This integration is due to the rectification of microwave energy by the numerous pn junctions within these circuits.

The Art of Electronics

NASA Astrophysics Data System (ADS)

Horowitz, Paul; Hill, Winfield

2015-04-01

1. Foundations; 2. Bipolar transistors; 3. Field effect transistors; 4. Operational amplifiers; 5. Precision circuits; 6. Filters; 7. Oscillators and timers; 8. Low noise techniques and transimpedance; 9. Power regulation; 10. Digital electronics; 11. Programmable logic devices; 12. Logical interfacing; 13. Digital meets analog; 14. Computers, controllers, and data links; 15. Microcontrollers.

Proceedings of the Conference on High-temperature Electronics

NASA Technical Reports Server (NTRS)

1981-01-01

The development of electronic devices for use in high temperature environments is addressed. The instrumentational needs of planetary exploration, fossil and nuclear power reactors, turbine engine monitoring, and well logging are defined. Emphasis is place on the fabrication and performance of materials and semiconductor devices, circuits and systems and packaging.

An open-source laser electronics suite

NASA Astrophysics Data System (ADS)

Pisenti, Neal C.; Reschovsky, Benjamin J.; Barker, Daniel S.; Restelli, Alessandro; Campbell, Gretchen K.

2016-05-01

We present an integrated set of open-source electronics for controlling external-cavity diode lasers and other instruments in the laboratory. The complete package includes a low-noise circuit for driving high-voltage piezoelectric actuators, an ultra-stable current controller based on the design of, and a high-performance, multi-channel temperature controller capable of driving thermo-electric coolers or resistive heaters. Each circuit (with the exception of the temperature controller) is designed to fit in a Eurocard rack equipped with a low-noise linear power supply capable of driving up to 5 A at +/- 15 V. A custom backplane allows signals to be shared between modules, and a digital communication bus makes the entire rack addressable by external control software over TCP/IP. The modular architecture makes it easy for additional circuits to be designed and integrated with existing electronics, providing a low-cost, customizable alternative to commercial systems without sacrificing performance.

Highest integration in microelectronics: Development of digital ASICs for PARS3-LR

NASA Astrophysics Data System (ADS)

Scholler, Peter; Vonlutz, Rainer

Essential electronic system components by PARS3-LR, show high requirements in calculation power, power consumption and reliability, by immediately increasing integration thicknesses. These problems are solved by using integrated circuits, developed by LSI LOGIC, that uses the technical and economic advantages of this leading edge technology.

Solar cell system having alternating current output

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1980-01-01

A monolithic multijunction solar cell was modified by fabricating an integrated circuit inverter on the back of the cell to produce a device capable of generating an alternating current output. In another embodiment, integrated curcuit power conditioning electronics was incorporated in a module containing a solar cell power supply.

Comparing SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

NASA Astrophysics Data System (ADS)

England, Troy; Curry, Matthew; Carr, Stephen; Mounce, Andrew; Jock, Ryan; Sharma, Peter; Bureau-Oxton, Chloe; Rudolph, Martin; Hardin, Terry; Carroll, Malcolm

Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will compare two amplifiers based on single-transistor circuits implemented with silicon germanium heterojunction bipolar transistors. Both amplifiers provide gain at low power levels, but the dynamics of each circuit vary significantly. We will explore the gain mechanisms, linearity, and noise of each circuit and explain the situations in which each amplifier is best used. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

Multi-objective optimization of MOSFETs channel widths and supply voltage in the proposed dual edge-triggered static D flip-flop with minimum average power and delay by using fuzzy non-dominated sorting genetic algorithm-II.

PubMed

Keivanian, Farshid; Mehrshad, Nasser; Bijari, Abolfazl

2016-01-01

D Flip-Flop as a digital circuit can be used as a timing element in many sophisticated circuits. Therefore the optimum performance with the lowest power consumption and acceptable delay time will be critical issue in electronics circuits. The newly proposed Dual-Edge Triggered Static D Flip-Flop circuit layout is defined as a multi-objective optimization problem. For this, an optimum fuzzy inference system with fuzzy rules is proposed to enhance the performance and convergence of non-dominated sorting Genetic Algorithm-II by adaptive control of the exploration and exploitation parameters. By using proposed Fuzzy NSGA-II algorithm, the more optimum values for MOSFET channel widths and power supply are discovered in search space than ordinary NSGA types. What is more, the design parameters involving NMOS and PMOS channel widths and power supply voltage and the performance parameters including average power consumption and propagation delay time are linked. To do this, the required mathematical backgrounds are presented in this study. The optimum values for the design parameters of MOSFETs channel widths and power supply are discovered. Based on them the power delay product quantity (PDP) is 6.32 PJ at 125 MHz Clock Frequency, L = 0.18 µm, and T = 27 °C.

Low cost electronic ultracapacitor interface technique to provide load leveling of a battery for pulsed load or motor traction drive applications

DOEpatents

King, Robert Dean; DeDoncker, Rik Wivina Anna Adelson

1998-01-01

A battery load leveling arrangement for an electrically powered system in which battery loading is subject to intermittent high current loading utilizes a passive energy storage device and a diode connected in series with the storage device to conduct current from the storage device to the load when current demand forces a drop in battery voltage. A current limiting circuit is connected in parallel with the diode for recharging the passive energy storage device. The current limiting circuit functions to limit the average magnitude of recharge current supplied to the storage device. Various forms of current limiting circuits are disclosed, including a PTC resistor coupled in parallel with a fixed resistor. The current limit circuit may also include an SCR for switching regenerative braking current to the device when the system is connected to power an electric motor.

Optically Isolated Control of the MOCHI LabJet High Power Pulsed Plasma Experiment

NASA Astrophysics Data System (ADS)

Carroll, Evan; Quinley, Morgan; von der Linden, Jens; You, Setthivoine

2014-10-01

The MOCHI LabJet experiment designed to investigate the dynamics of astrophysical jets at the University of Washington, requires high energy pulsed power supplies for plasma generation and sustainment. Two 600 μ F, 10 kV DC, pulse forming, power supplies have been specifically developed for this application. For safe and convenient user operation, the power supplies are controlled remotely with optical isolation. Three input voltage signals are required for relay actuation, adjusting bank charging voltage, and to fire the experiment: long duration DC signals, long duration user adjustable DC signals and fast trigger pulses with < μ s rise times. These voltage signals are generated from National Instruments timing cards via LabVIEW and are converted to optical signals by coupling photodiodes with custom electronic circuits. At the experiment, the optical signals are converted back to usable voltage signals using custom circuits. These custom circuits and experimental set-up are presented. This work is supported by US DOE Grant DE-SC0010340.

GaAs-based JFET and PHEMT technologies for ultra-low-power microwave circuits operating at frequencies up to 2.4 GHz

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, A.G.; Hietala, V.M.; Greenway, D.

1998-05-01

In this work the authors report results of narrowband amplifiers designed for milliwatt and submilliwatt power consumption using JFET and pseudomorphic high electron mobility transistors (PHEMT) GaAs-based technologies. Enhancement-mode JFETs were used to design both a hybrid amplifier with off-chip matching as well as a monolithic microwave integrated circuit (MMIC) with on-chip matching. The hybrid amplifier achieved 8--10 dB of gain at 2.4 GHz and 1 mW. The MMIC achieved 10 dB of gain at 2.4 GHz and 2 mW. Submilliwatt circuits were also explored by using 0.25 {micro}m PHEMTs. 25 {micro}W power levels were achieved with 5 dB ofmore » gain for a 215 MHz hybrid amplifier. These results significantly reduce power consumption levels achievable with the JFETs or prior MESFET, heterostructure field effect transistor (HFET), or Si bipolar results from other laboratories.« less

A wireless transmission system powered by an enzyme biofuel cell implanted in an orange.

PubMed

MacVittie, Kevin; Conlon, Tyler; Katz, Evgeny

2015-12-01

A biofuel cell composed of catalytic electrodes made of "buckypaper" modified with PQQ-dependent glucose dehydrogenase and FAD-dependent fructose dehydrogenase on the anode and with laccase on the cathode was used to activate a wireless information transmission system. The cathode/anode pair was implanted in orange pulp extracting power from its content (glucose and fructose in the juice). The open circuit voltage, Voc, short circuit current density, jsc, and maximum power produced by the biofuel cell, Pmax, were found as ca. 0.6 V, ca. 0.33 mA·cm(-2) and 670 μW, respectively. The voltage produced by the biofuel cell was amplified with an energy harvesting circuit and applied to a wireless transmitter. The present study continues the research line where different implantable biofuel cells are used for the activation of electronic devices. The study emphasizes the biosensor and environmental monitoring applications of implantable biofuel cells harvesting power from natural sources, rather than their biomedical use. Copyright © 2014 Elsevier B.V. All rights reserved.

Multiple piezo-patch energy harvesters integrated to a thin plate with AC-DC conversion: analytical modeling and numerical validation

NASA Astrophysics Data System (ADS)

Aghakhani, Amirreza; Basdogan, Ipek; Erturk, Alper

2016-04-01

Plate-like components are widely used in numerous automotive, marine, and aerospace applications where they can be employed as host structures for vibration based energy harvesting. Piezoelectric patch harvesters can be easily attached to these structures to convert the vibrational energy to the electrical energy. Power output investigations of these harvesters require accurate models for energy harvesting performance evaluation and optimization. Equivalent circuit modeling of the cantilever-based vibration energy harvesters for estimation of electrical response has been proposed in recent years. However, equivalent circuit formulation and analytical modeling of multiple piezo-patch energy harvesters integrated to thin plates including nonlinear circuits has not been studied. In this study, equivalent circuit model of multiple parallel piezoelectric patch harvesters together with a resistive load is built in electronic circuit simulation software SPICE and voltage frequency response functions (FRFs) are validated using the analytical distributedparameter model. Analytical formulation of the piezoelectric patches in parallel configuration for the DC voltage output is derived while the patches are connected to a standard AC-DC circuit. The analytic model is based on the equivalent load impedance approach for piezoelectric capacitance and AC-DC circuit elements. The analytic results are validated numerically via SPICE simulations. Finally, DC power outputs of the harvesters are computed and compared with the peak power amplitudes in the AC output case.

Power supply and pulsing strategies for the future linear colliders

NASA Astrophysics Data System (ADS)

Brogna, A. S.; Göttlicher, P.; Weber, M.

2012-02-01

The concept of the power delivery systems of the future linear colliders exploits the pulsed bunch structure of the beam in order to minimize the average current in the cables and the electronics and thus to reduce the material budget and heat dissipation. Although modern integrated circuit technologies are already available to design a low-power system, the concepts on how to pulse the front-end electronics and further reduce the power are not yet well understood. We propose a possible implementation of a power pulsing system based on a DC/DC converter and we choose the Analog Hadron Calorimeter as a specific example. The model features large switching currents of electronic modules in short time intervals to stimulate the inductive components along the cables and interconnections.

Thin, nearly wireless adaptive optical device

NASA Technical Reports Server (NTRS)

Knowles, Gareth (Inventor); Hughes, Eli (Inventor)

2008-01-01

A thin, nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

Thin, nearly wireless adaptive optical device

NASA Technical Reports Server (NTRS)

Knowles, Gareth (Inventor); Hughes, Eli (Inventor)

2007-01-01

A thin, nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

Thin nearly wireless adaptive optical device

NASA Technical Reports Server (NTRS)

Knowles, Gareth J. (Inventor); Hughes, Eli (Inventor)

2009-01-01

A thin nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

NASA Astrophysics Data System (ADS)

Di Pendina, G.; Zianbetov, E.; Beigne, E.

2015-05-01

Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.

The TELEC - A plasma type of direct energy converter. [Thermo-Electronic Laser Energy Converter for electric power generation

NASA Technical Reports Server (NTRS)

Britt, E. J.

1978-01-01

The Thermo-Electronic Laser Energy Converter (TELEC) is a high-power density plasma device designed to convert a 10.6-micron CO2 laser beam into electric power. Electromagnetic radiation is absorbed in plasma electrons, creating a high-electron temperature. Energetic electrons diffuse from the plasma and strike two electrodes having different areas. The larger electrode collects more electrons and there is a net transport of current. An electromagnetic field is generated in the external circuit. A computer program has been designed to analyze TELEC performance allowing parametric variation for optimization. Values are presented for TELEC performance as a function of cesium pressure and for current density and efficiency as a function of output voltage. Efficiency is shown to increase with pressure, reaching a maximum over 45%.

Simulation of absolute amplitudes of ultrasound signals using equivalent circuits.

PubMed

Johansson, Jonny; Martinsson, Pär-Erik; Delsing, Jerker

2007-10-01

Equivalent circuits for piezoelectric devices and ultrasonic transmission media can be used to cosimulate electronics and ultrasound parts in simulators originally intended for electronics. To achieve efficient system-level optimization, it is important to simulate correct, absolute amplitude of the ultrasound signal in the system, as this determines the requirements on the electronics regarding dynamic range, circuit noise, and power consumption. This paper presents methods to achieve correct, absolute amplitude of an ultrasound signal in a simulation of a pulse-echo system using equivalent circuits. This is achieved by taking into consideration loss due to diffraction and the effect of the cable that connects the electronics and the piezoelectric transducer. The conductive loss in the transmission line that models the propagation media of the ultrasound pulse is used to model the loss due to diffraction. Results show that the simulated amplitude of the echo follows measured values well in both near and far fields, with an offset of about 10%. The use of a coaxial cable introduces inductance and capacitance that affect the amplitude of a received echo. Amplitude variations of 60% were observed when the cable length was varied between 0.07 m and 2.3 m, with simulations predicting similar variations. The high precision in the achieved results show that electronic design and system optimization can rely on system simulations alone. This will simplify the development of integrated electronics aimed at ultrasound systems.

Trap Healing for High-Performance Low-Voltage Polymer Transistors and Solution-Based Analog Amplifiers on Foil.

PubMed

Pecunia, Vincenzo; Nikolka, Mark; Sou, Antony; Nasrallah, Iyad; Amin, Atefeh Y; McCulloch, Iain; Sirringhaus, Henning

2017-06-01

Solution-processed semiconductors such as conjugated polymers have great potential in large-area electronics. While extremely appealing due to their low-temperature and high-throughput deposition methods, their integration in high-performance circuits has been difficult. An important remaining challenge is the achievement of low-voltage circuit operation. The present study focuses on state-of-the-art polymer thin-film transistors based on poly(indacenodithiophene-benzothiadiazole) and shows that the general paradigm for low-voltage operation via an enhanced gate-to-channel capacitive coupling is unable to deliver high-performance device behavior. The order-of-magnitude longitudinal-field reduction demanded by low-voltage operation plays a fundamental role, enabling bulk trapping and leading to compromised contact properties. A trap-reduction technique based on small molecule additives, however, is capable of overcoming this effect, allowing low-voltage high-mobility operation. This approach is readily applicable to low-voltage circuit integration, as this work exemplifies by demonstrating high-performance analog differential amplifiers operating at a battery-compatible power supply voltage of 5 V with power dissipation of 11 µW, and attaining a voltage gain above 60 dB at a power supply voltage below 8 V. These findings constitute an important milestone in realizing low-voltage polymer transistors for solution-based analog electronics that meets performance and power-dissipation requirements for a range of battery-powered smart-sensing applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Spacecraft transformer and inductor design

NASA Technical Reports Server (NTRS)

Mclyman, W. T.

1977-01-01

The conversion process in spacecraft power electronics requires the use of magnetic components which frequently are the heaviest and bulkiest items in the conversion circuit. This handbook pertains to magnetic material selection, transformer and inductor design tradeoffs, transformer design, iron core dc inductor design, toroidal power core inductor design, window utilization factors, regulation, and temperature rise. Relationships are given which simplify and standardize the design of transformers and the analysis of the circuits in which they are used. The interactions of the various design parameters are also presented in simplified form so that tradeoffs and optimizations may easily be made.

Multicoil resonance-based parallel array for smart wireless power delivery.

PubMed

Mirbozorgi, S A; Sawan, M; Gosselin, B

2013-01-01

This paper presents a novel resonance-based multicoil structure as a smart power surface to wirelessly power up apparatus like mobile, animal headstage, implanted devices, etc. The proposed powering system is based on a 4-coil resonance-based inductive link, the resonance coil of which is formed by an array of several paralleled coils as a smart power transmitter. The power transmitter employs simple circuit connections and includes only one power driver circuit per multicoil resonance-based array, which enables higher power transfer efficiency and power delivery to the load. The power transmitted by the driver circuit is proportional to the load seen by the individual coil in the array. Thus, the transmitted power scales with respect to the load of the electric/electronic system to power up, and does not divide equally over every parallel coils that form the array. Instead, only the loaded coils of the parallel array transmit significant part of total transmitted power to the receiver. Such adaptive behavior enables superior power, size and cost efficiency then other solutions since it does not need to use complex detection circuitry to find the location of the load. The performance of the proposed structure is verified by measurement results. Natural load detection and covering 4 times bigger area than conventional topologies with a power transfer efficiency of 55% are the novelties of presented paper.

21 CFR 870.3600 - External pacemaker pulse generator.

Code of Federal Regulations, 2010 CFR

2010-04-01

... power supply and electronic circuits that produce a periodic electrical pulse to stimulate the heart. This device, which is used outside the body, is used as a temporary substitute for the heart's...

21 CFR 870.3600 - External pacemaker pulse generator.

Code of Federal Regulations, 2013 CFR

2013-04-01

... power supply and electronic circuits that produce a periodic electrical pulse to stimulate the heart. This device, which is used outside the body, is used as a temporary substitute for the heart's...

21 CFR 870.3600 - External pacemaker pulse generator.

Code of Federal Regulations, 2014 CFR

2014-04-01

... power supply and electronic circuits that produce a periodic electrical pulse to stimulate the heart. This device, which is used outside the body, is used as a temporary substitute for the heart's...

21 CFR 870.3600 - External pacemaker pulse generator.

Code of Federal Regulations, 2012 CFR

2012-04-01

... power supply and electronic circuits that produce a periodic electrical pulse to stimulate the heart. This device, which is used outside the body, is used as a temporary substitute for the heart's...

21 CFR 870.3600 - External pacemaker pulse generator.

Code of Federal Regulations, 2011 CFR

2011-04-01

... power supply and electronic circuits that produce a periodic electrical pulse to stimulate the heart. This device, which is used outside the body, is used as a temporary substitute for the heart's...

A large-area wireless power-transmission sheet using printed organic transistors and plastic MEMS switches.

PubMed

Sekitani, Tsuyoshi; Takamiya, Makoto; Noguchi, Yoshiaki; Nakano, Shintaro; Kato, Yusaku; Sakurai, Takayasu; Someya, Takao

2007-06-01

The electronics fields face serious problems associated with electric power; these include the development of ecologically friendly power-generation systems and ultralow-power-consuming circuits. Moreover, there is a demand for developing new power-transmission methods in the imminent era of ambient electronics, in which a multitude of electronic devices such as sensor networks will be used in our daily life to enhance security, safety and convenience. We constructed a sheet-type wireless power-transmission system by using state-of-the-art printing technologies using advanced electronic functional inks. This became possible owing to recent progress in organic semiconductor technologies; the diversity of chemical syntheses and processes on organic materials has led to a new class of organic semiconductors, dielectric layers and metals with excellent electronic functionalities. The new system directly drives electronic devices by transmitting power of the order of tens of watts without connectors, thereby providing an easy-to-use and reliable power source. As all of the components are manufactured on plastic films, it is easy to place the wireless power-transmission sheet over desks, floors, walls and any other location imaginable.

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Alterovitz, Samuel A.; Katehi, Linda P. B.; Bhattacharya, Pallab K.

1997-01-01

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

Smart cards: a specific application in the hospital.

PubMed

Güler, I; Zengin, R M; Sönmez, M

1998-12-01

Computers have the ability to process and access tremendous amounts of information in our daily lives. But, now, individuals have this ability by carrying a smart card in their own wallets. These cards provide us the versatility, power, and security of computers. This study begins with a short description of smart cards and their advantages. Then, an electronic circuit that is designed for healthcare application in hospitals is introduced. This circuit functions as a smart card holder identifier, access controller for hospital doors and also can be used as a smart card reader/writer. Design steps of this electronic circuit, operation principles, serial communication with P.C., and the software are examined. Finally a complete access control network for hospital doors that functions with smart cards is discussed.

Gm-Realization of Controlled-Gain Current Follower Transconductance Amplifier

PubMed Central

Tangsrirat, Worapong

2013-01-01

This paper describes the conception of the current follower transconductance amplifier (CFTA) with electronically and linearly current tunable. The newly modified element is realized based on the use of transconductance cells (G m s) as core circuits. The advantage of this element is that the current transfer ratios (i z/i p and i x/i z) can be tuned electronically and linearly by adjusting external DC bias currents. The circuit is designed and analyzed in 0.35 μm TSMC CMOS technology. Simulation results for the circuit with ±1.25 V supply voltages show that it consumes only 0.43 mw quiescent power with 70 MHz bandwidth. As an application example, a current-mode KHN biquad filter is designed and simulated. PMID:24381513

Dynamic and Tunable Threshold Voltage in Organic Electrochemical Transistors.

PubMed

Doris, Sean E; Pierre, Adrien; Street, Robert A

2018-04-01

In recent years, organic electrochemical transistors (OECTs) have found applications in chemical and biological sensing and interfacing, neuromorphic computing, digital logic, and printed electronics. However, the incorporation of OECTs in practical electronic circuits is limited by the relative lack of control over their threshold voltage, which is important for controlling the power consumption and noise margin in complementary and unipolar circuits. Here, the threshold voltage of OECTs is precisely tuned over a range of more than 1 V by chemically controlling the electrochemical potential at the gate electrode. This threshold voltage tunability is exploited to prepare inverters and amplifiers with improved noise margin and gain, respectively. By coupling the gate electrode with an electrochemical oscillator, single-transistor oscillators based on OECTs with dynamic time-varying threshold voltages are prepared. This work highlights the importance of electrochemistry at the gate electrode in determining the electrical properties of OECTs, and opens a path toward the system-level design of low-power OECT-based electronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

GaAs VLSI for aerospace electronics

NASA Technical Reports Server (NTRS)

Larue, G.; Chan, P.

1990-01-01

Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

Critical Review of Commercial Secondary Lithium-Ion Battery Safety Standards

NASA Astrophysics Data System (ADS)

Jones, Harry P.; Chapin, Thomas, J.; Tabaddor, Mahmod

2010-09-01

The development of Li-ion cells with greater energy density has lead to safety concerns that must be carefully assessed as Li-ion cells power a wide range of products from consumer electronics to electric vehicles to space applications. Documented field failures and product recalls for Li-ion cells, mostly for consumer electronic products, highlight the risk of fire, smoke, and even explosion. These failures have been attributed to the occurrence of internal short circuits and the subsequent thermal runaway that can lead to fire and explosion. As packaging for some applications include a large number of cells, the risk of failure is likely to be magnified. To address concerns about the safety of battery powered products, safety standards have been developed. This paper provides a review of various international safety standards specific to lithium-ion cells. This paper shows that though the standards are harmonized on a host of abuse conditions, most lack a test simulating internal short circuits. This paper describes some efforts to introduce internal short circuit tests into safety standards.

Advanced combined iodine dispenser and detector. [for microorganism annihilation in potable water

NASA Technical Reports Server (NTRS)

Lantz, J. B.; Schubert, F. H.; Jensen, F. C.; Powell, J. D.

1977-01-01

A total weight of 1.23 kg (2.7 lb), a total volume of 1213 cu m (74 cu in), and an average power consumption of 5.5W was achieved in the advanced combined iodine dispenser/detector by integrating the detector with the iodine source, arranging all iodinator components within a compact package and lowering the parasitic power to the detector and electronics circuits. These achievements surpassed the design goals of 1.36 kg (3.0 lb), 1671 cu m (102 cu in) and 8W. The reliability and maintainability were improved by reducing the detector lamp power, using an interchangeable lamp concept, making the electronic circuit boards easily accessible, providing redundant water seals and improving the accessibility to the iodine accumulator for refilling. The system was designed to iodinate (to 5 ppm iodine) the fuel cell water generated during 27 seven-day orbiter missions (equivalent to 18,500 kg (40,700 lb) of water) before the unit must be recharged with iodine crystals.

Control and Analysis for a Self-Excited Induction Generator for Wind Turbine and Electrolyzer Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muljadi, Eduard; Na, Woonki; Leighty, Bill

Self-Excited Induction Generation(SEIG) is very rugged, simple, lightweight, and it is easy and inexpensive to implement, very simple to control, and requires a very little maintenance. In this variable-speed operation, the SEIG needs a power electronics interface to convert from the variable frequency output voltage of the generator to a DC output voltage for battery or other DC applications. In our study, a SEIG is connected to the power electronics interface such as diode rectifier and DC/DC converter and then an electrolyzer is connected as a final DC load for fuel cell applications. An equivalent circuit model for an electrolyzermore » is utilized for our application. The control and analysis for the proposed system is carried out by using PSCAD and MATLAB software. This study would be useful for designing and control analysis of power interface circuits for SEIG for a variable speed wind turbine generation with fuel cell applications before the actual implementation.« less

Internet of "printed" Things: low-cost fabrication of autonomous sensing nodes by inkjet printing

NASA Astrophysics Data System (ADS)

Kawahara, Yoshihiro

2014-11-01

"What if electronics devices are printed using an inkjet printer even at home?" "What if those devices no longer need a battery?" I will introduce two enabling technologies for the Internet of Things concept. 1. Instant Inkjet Circuits: A low cost, fast and accessible technology to support the rapid prototyping of electronic devices. We demonstrated that "sintering-free" silver nano particle ink with a commodity inkjet printer can be used to fabricate printed circuit board and high-frequency applications such as antennas and sensors. The technology is now commercialized by AgIC, Inc. 2. Wireless Power: Although large amounts of data can be exchanged over a wireless communication link, mobile devices are still tethered by power cables. We are trying to solve this problem by two different approaches: energy harvesting. A simple circuitry comprised of diodes and capacitor can convert ambient radio signals into DC current. Our research revealed the signals from TV tower located 6.5km apart could be used to feed 100 microwatts to power microcontrollers.

Electron emission controller with pulsed heating of filament

NASA Astrophysics Data System (ADS)

Durakiewicz, Tomasz

1996-11-01

A novel circuit has been invented for the versatile and safe stabilization of the electron emission current (Ie) produced by a hot filament in mass spectrometers or in ionization gauges. The voltage signal, which is directly proportional to Ie, is provided to the inverting input of a comparator, whereas the noninverting input is connected to the reference voltage. In addition to the commonly used negative feedback loop, a positive feedback loop was introduced by siting a resistor between the noninverting input and the output of the comparator, which results in a pulsation of the filament voltage. The pulses are rectangular, so that the power dissipated by the transistor in the filament power supply circuit is radically reduced. To refine the switching action of the transistor, the output of the comparator is connected through a capacitor to the transistor gate. A concise discussion of the phase shift between Ie, the filament temperature Tf, and the filament voltage Vf, including time constants for different modes of power dissipation, is included.

Monolithic circuits for barium fluoride detectors used in nuclear physics experiments. CRADA final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varner, R.L.; Blankenship, J.L.; Beene, J.R.

1998-02-01

Custom monolithic electronic circuits have been developed recently for large detector applications in high energy physics where subsystems require tens of thousands of channels of signal processing and data acquisition. In the design and construction of these enormous detectors, it has been found that monolithic circuits offer significant advantages over discrete implementations through increased performance, flexible packaging, lower power and reduced cost per channel. Much of the integrated circuit design for the high energy physics community is directly applicable to intermediate energy heavy-ion and electron physics. This STTR project conducted in collaboration with researchers at the Holifield Radioactive Ion Beammore » Facility (HRIBF) at Oak Ridge National Laboratory, sought to develop a new integrated circuit chip set for barium fluoride (BaF{sub 2}) detector arrays based upon existing CMOS monolithic circuit designs created for the high energy physics experiments. The work under the STTR Phase 1 demonstrated through the design, simulation, and testing of several prototype chips the feasibility of using custom CMOS integrated circuits for processing signals from BaF{sub 2} detectors. Function blocks including charge-sensitive amplifiers, comparators, one shots, time-to-amplitude converters, analog memory circuits and buffer amplifiers were implemented during Phase 1 effort. Experimental results from bench testing and laboratory testing with sources were documented.« less

Systematic Computation of Nonlinear Cellular and Molecular Dynamics with Low-Power CytoMimetic Circuits: A Simulation Study

PubMed Central

Papadimitriou, Konstantinos I.; Stan, Guy-Bart V.; Drakakis, Emmanuel M.

2013-01-01

This paper presents a novel method for the systematic implementation of low-power microelectronic circuits aimed at computing nonlinear cellular and molecular dynamics. The method proposed is based on the Nonlinear Bernoulli Cell Formalism (NBCF), an advanced mathematical framework stemming from the Bernoulli Cell Formalism (BCF) originally exploited for the modular synthesis and analysis of linear, time-invariant, high dynamic range, logarithmic filters. Our approach identifies and exploits the striking similarities existing between the NBCF and coupled nonlinear ordinary differential equations (ODEs) typically appearing in models of naturally encountered biochemical systems. The resulting continuous-time, continuous-value, low-power CytoMimetic electronic circuits succeed in simulating fast and with good accuracy cellular and molecular dynamics. The application of the method is illustrated by synthesising for the first time microelectronic CytoMimetic topologies which simulate successfully: 1) a nonlinear intracellular calcium oscillations model for several Hill coefficient values and 2) a gene-protein regulatory system model. The dynamic behaviours generated by the proposed CytoMimetic circuits are compared and found to be in very good agreement with their biological counterparts. The circuits exploit the exponential law codifying the low-power subthreshold operation regime and have been simulated with realistic parameters from a commercially available CMOS process. They occupy an area of a fraction of a square-millimetre, while consuming between 1 and 12 microwatts of power. Simulations of fabrication-related variability results are also presented. PMID:23393550

Modeling recombination processes and predicting energy conversion efficiency of dye sensitized solar cells from first principles

NASA Astrophysics Data System (ADS)

Ma, Wei; Meng, Sheng

2014-03-01

We present a set of algorithms based on solo first principles calculations, to accurately calculate key properties of a DSC device including sunlight harvest, electron injection, electron-hole recombination, and open circuit voltages. Two series of D- π-A dyes are adopted as sample dyes. The short circuit current can be predicted by calculating the dyes' photo absorption, and the electron injection and recombination lifetime using real-time time-dependent density functional theory (TDDFT) simulations. Open circuit voltage can be reproduced by calculating energy difference between the quasi-Fermi level of electrons in the semiconductor and the electrolyte redox potential, considering the influence of electron recombination. Based on timescales obtained from real time TDDFT dynamics for excited states, the estimated power conversion efficiency of DSC fits nicely with the experiment, with deviation below 1-2%. Light harvesting efficiency, incident photon-to-electron conversion efficiency and the current-voltage characteristics can also be well reproduced. The predicted efficiency can serve as either an ideal limit for optimizing photovoltaic performance of a given dye, or a virtual device that closely mimicking the performance of a real device under different experimental settings.

Liquid crystal display (LCD) drive electronics

NASA Astrophysics Data System (ADS)

Loudin, Jeffrey A.; Duffey, Jason N.; Booth, Joseph J.; Jones, Brian K.

1995-03-01

A new drive circuit for the liquid crystal display (LCD) of the InFocus TVT-6000 video projector is currently under development at the U.S. Army Missile Command. The new circuit will allow individual pixel control of the LCD and increase the frame rate by a factor of two while yielding a major reduction in space and power requirements. This paper will discuss results of the effort to date.

Ultra high speed image processing techniques. [electronic packaging techniques

NASA Technical Reports Server (NTRS)

Anthony, T.; Hoeschele, D. F.; Connery, R.; Ehland, J.; Billings, J.

1981-01-01

Packaging techniques for ultra high speed image processing were developed. These techniques involve the development of a signal feedthrough technique through LSI/VLSI sapphire substrates. This allows the stacking of LSI/VLSI circuit substrates in a 3 dimensional package with greatly reduced length of interconnecting lines between the LSI/VLSI circuits. The reduced parasitic capacitances results in higher LSI/VLSI computational speeds at significantly reduced power consumption levels.

A study on the maximum power transfer condition in an inductively coupled plasma using transformer circuit model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Young-Do; Lee, Hyo-Chang; Chung, Chin-Wook

Correlations between the external discharge parameters (the driving frequency ω and the chamber dimension R) and plasma characteristics (the skin depth δ and the electron-neutral collision frequency ν{sub m}) are studied using the transformer circuit model [R. B. Piejak et al., Plasma Sources Sci. Technol. 1, 179 (1992)] when the absorbed power is maximized in an inductively coupled plasma. From the analysis of the transformer circuit model, the maximum power transfer conditions, which depend on the external discharge parameters and the internal plasma characteristics, were obtained. It was found that a maximum power transfer occurs when δ≈0.38R for the dischargemore » condition at which ν{sub m}/ω≪1, while it occurs when δ≈√(2)√(ω/ν{sub m})R for the discharge condition at which ν{sub m}/ω≫1. The results of this circuit analysis are consistent with the stable last inductive mode region of an inductive-to-capacitive mode transition [Lee and Chung, Phys. Plasmas 13, 063510 (2006)], which was theoretically derived from Maxwell's equations. Our results were also in agreement with the experimental results. From this work, we demonstrate that a simple circuit analysis can be applied to explain complex physical phenomena to a certain extent.« less

Design and Evaluation of a Clock Multiplexing Circuit for the SSRL Booster Accelerator Timing System - Oral Presentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Araya, Million

2015-08-25

SPEAR3 is a 234 m circular storage ring at SLAC’s synchrotron radiation facility (SSRL) in which a 3 GeV electron beam is stored for user access. Typically the electron beam decays with a time constant of approximately 10hr due to electron lose. In order to replenish the lost electrons, a booster synchrotron is used to accelerate fresh electrons up to 3GeV for injection into SPEAR3. In order to maintain a constant electron beam current of 500mA, the injection process occurs at 5 minute intervals. At these times the booster synchrotron accelerates electrons for injection at a 10Hz rate. A 10Hzmore » 'injection ready' clock pulse train is generated when the booster synchrotron is operating. Between injection intervalswhere the booster is not running and hence the 10 Hz ‘injection ready’ signal is not present-a 10Hz clock is derived from the power line supplied by Pacific Gas and Electric (PG&E) to keep track of the injection timing. For this project I constructed a multiplexing circuit to 'switch' between the booster synchrotron 'injection ready' clock signal and PG&E based clock signal. The circuit uses digital IC components and is capable of making glitch-free transitions between the two clocks. This report details construction of a prototype multiplexing circuit including test results and suggests improvement opportunities for the final design.« less

Design and Evaluation of a Clock Multiplexing Circuit for the SSRL Booster Accelerator Timing System - Final Paper

DOE Office of Scientific and Technical Information (OSTI.GOV)

Araya, Million

2015-08-21

SPEAR3 is a 234 m circular storage ring at SLAC’s synchrotron radiation facility (SSRL) in which a 3 GeV electron beam is stored for user access. Typically the electron beam decays with a time constant of approximately 10hr due to electron lose. In order to replenish the lost electrons, a booster synchrotron is used to accelerate fresh electrons up to 3GeV for injection into SPEAR3. In order to maintain a constant electron beam current of 500mA, the injection process occurs at 5 minute intervals. At these times the booster synchrotron accelerates electrons for injection at a 10Hz rate. A 10Hzmore » 'injection ready' clock pulse train is generated when the booster synchrotron is operating. Between injection intervals-where the booster is not running and hence the 10 Hz ‘injection ready’ signal is not present-a 10Hz clock is derived from the power line supplied by Pacific Gas and Electric (PG&E) to keep track of the injection timing. For this project I constructed a multiplexing circuit to 'switch' between the booster synchrotron 'injection ready' clock signal and PG&E based clock signal. The circuit uses digital IC components and is capable of making glitch-free transitions between the two clocks. This report details construction of a prototype multiplexing circuit including test results and suggests improvement opportunities for the final design.« less

A novel interface circuit for triboelectric nanogenerator

NASA Astrophysics Data System (ADS)

Yu, Wuqi; Ma, Jiahao; Zhang, Zhaohua; Ren, Tianling

2017-10-01

For most triboelectric nanogenerators (TENGs), the electric output should be a short AC pulse, which has the common characteristic of high voltage but low current. Thus it is necessary to convert the AC to DC and store the electric energy before driving conventional electronics. The traditional AC voltage regulator circuit which commonly consists of transformer, rectifier bridge, filter capacitor, and voltage regulator diode is not suitable for the TENG because the transformer’s consumption of power is appreciable if the TENG output is small. This article describes an innovative design of an interface circuit for a triboelectric nanogenerator that is transformerless and easily integrated. The circuit consists of large-capacity electrolytic capacitors that can realize to intermittently charge lithium-ion batteries and the control section contains the charging chip, the rectifying circuit, a comparator chip and switch chip. More important, the whole interface circuit is completely self-powered and self-controlled. Meanwhile, the chip is widely used in the circuit, so it is convenient to integrate into PCB. In short, this work presents a novel interface circuit for TENGs and makes progress to the practical application and industrialization of nanogenerators. Project supported by the National Natural Science Foundation of China (No. 61434001) and the ‘Thousands Talents’ Program for Pioneer Researchers and Its Innovation Team, China.

Initiative in Concurrent Engineering (DICE). Phase 1.

DTIC Science & Technology

1990-02-09

and power of commercial and military electronics systems. The continual evolution of HDE technology offers far greater flexibility in circuit design... powerful magnetic field of the permanent magnets in the sawyer motors. This makes it possible to have multiple robots in the workcell and to have them...Controller. The Adept IC was chosen because of its extensive processing power , integrated grayscale vision, standard 28 industrial I/O control

MIMIC-compatible GaAs and InP field effect controlled transferred electron (FECTED) oscillators

NASA Astrophysics Data System (ADS)

Scheiber, Helmut; Luebke, Kurt; Diskus, Christian G.; Thim, Hartwig W.; Gruetzmacher, D.

1989-12-01

A MIMIC-(millimeter and microwave integrated circuit) compatible transferred electron oscillator is investigated which utilizes the frequency-independent negative resistance of the stationary charge dipole domain that forms in the channel of a MESFET. The device structure, analysis, and simulation are described. Devices fabricated from GaAs and InP exhibit very high power levels of 56 mW at 29 GHz and 55 mW at 34 GHz, respectively. Continuous wave power levels are somewhat lower (30 mW).

Development of a Bio-nanobattery for Distributed Power Storage Systems

NASA Technical Reports Server (NTRS)

King, Glen C.; Choi, Sang H.; Chu, Sang-Hyon; Kim, Jae-Woo; Park, Yeonjoon; Lillehei, Peter; Watt, Gerald D.; Davis, Robert; Harb, John N.

2004-01-01

Currently available power storage systems, such as those used to supply power to microelectronic devices, typically consist of a single centralized canister and a series of wires to supply electrical power to where it is needed in a circuit. As the size of electrical circuits and components become smaller, there exists a need for a distributed power system to reduce Joule heating, wiring, and to allow autonomous operation of the various functions performed by the circuit. Our research is being conducted to develop a bio-nanobattery using ferritins reconstituted with both an iron core (Fe-ferritin) and a cobalt core (Co-ferritin). Both Co-ferritin and Fe-ferritin were synthesized and characterized as candidates for the bio-nanobattery. The reducing capability was determined as well as the half-cell electrical potentials, indicating an electrical output of nearly 0.5 V for the battery cell. Ferritins having other metallic cores are also being investigated, in order to increase the overall electrical output. Two dimensional ferritin arrays were also produced on various substrates, demonstrating the necessary building blocks for the bio-nanobattery. The bio-nanobattery will play a key role in moving to a distributed power storage system for electronic applications.

Medium power amplifiers covering 90 - 130 GHz for telescope local oscillators

NASA Technical Reports Server (NTRS)

Samoska, Lorene A.; Bryerton, Eric; Pukala, David; Peralta, Alejandro; Hu, Ming; Schmitz, Adele

2005-01-01

This paper describes a set of power amplifier (PA) modules containing InP High Electron Mobility Transistor (HEMT) Monolithic Millimeter-wave Integrated Circuit (MMIC) chips. The chips were designed and optimized for local oscillator sources in the 90-130 GHz band for the Atacama Large Millimeter Array telescope. The modules feature 20-45 mW of output power, to date the highest power from solid state HEMT MMIC modules above 110 GHz.

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

PubMed Central

2015-01-01

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%. PMID:25679010

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

PubMed

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

2014-12-17

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

Design for low-power and reliable flexible electronics

NASA Astrophysics Data System (ADS)

Huang, Tsung-Ching (Jim)

Flexible electronics are emerging as an alternative to conventional Si electronics for large-area low-cost applications such as e-paper, smart sensors, and disposable RFID tags. By utilizing inexpensive manufacturing methods such as ink-jet printing and roll-to-roll imprinting, flexible electronics can be made on low-cost plastics just like printing a newspaper. However, the key elements of exible electronics, thin-film transistors (TFTs), have slower operating speeds and less reliability than their Si electronics counterparts. Furthermore, depending on the material property, TFTs are usually mono-type -- either p- or n-type -- devices. Making air-stable complementary TFT circuits is very challenging and not applicable to most TFT technologies. Existing design methodologies for Si electronics, therefore, cannot be directly applied to exible electronics. Other inhibiting factors such as high supply voltage, large process variation, and lack of trustworthy device modeling also make designing larger-scale and robust TFT circuits a significant challenge. The major goal of this dissertation is to provide a viable solution for robust circuit design in exible electronics. I will first introduce a reliability simulation framework that can predict the degraded TFT circuits' performance under bias-stress. This framework has been validated using the amorphous-silicon (a-Si) TFT scan driver for TFT-LCD displays. To reuse the existing CMOS design ow for exible electronics, I propose a Pseudo-CMOS cell library that can make TFT circuits operable under low supply voltage and which has post-fabrication tunability for reliability and performance enhancement. This cell library has been validated using 2V self-assembly-monolayer (SAM) organic TFTs with a low-cost shadow-mask deposition process. I will also demonstrate a 3-bit 1.25KS/s Flash ADC in a-Si TFTs, which is based on the proposed Pseudo-CMOS cell library, and explore more possibilities in display, energy, and sensing applications.

Inverted battery design as ion generator for interfacing with biosystems

DOE PAGES

Wang, Chengwei; Fu, Kun; Dai, Jiaqi; ...

2017-07-24

In a lithium-ion battery, electrons are released from the anode and go through an external electronic circuit to power devices, while ions simultaneously transfer through internal ionic media to meet with electrons at the cathode. Inspired by the fundamental electrochemistry of the lithium-ion battery, we envision a cell that can generate a current of ions instead of electrons, so that ions can be used for potential applications in biosystems. Based on this concept, we report an ‘electron battery’ configuration in which ions travel through an external circuit to interact with the intended biosystem whereas electrons are transported internally. As amore » proof-of-concept, we demonstrate the application of the electron battery by stimulating a monolayer of cultured cells, which fluoresces a calcium ion wave at a controlled ionic current. Electron batteries with the capability to generate a tunable ionic current could pave the way towards precise ion-system control in a broad range of biological applications« less

Inverted battery design as ion generator for interfacing with biosystems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Chengwei; Fu, Kun; Dai, Jiaqi

In a lithium-ion battery, electrons are released from the anode and go through an external electronic circuit to power devices, while ions simultaneously transfer through internal ionic media to meet with electrons at the cathode. Inspired by the fundamental electrochemistry of the lithium-ion battery, we envision a cell that can generate a current of ions instead of electrons, so that ions can be used for potential applications in biosystems. Based on this concept, we report an ‘electron battery’ configuration in which ions travel through an external circuit to interact with the intended biosystem whereas electrons are transported internally. As amore » proof-of-concept, we demonstrate the application of the electron battery by stimulating a monolayer of cultured cells, which fluoresces a calcium ion wave at a controlled ionic current. Electron batteries with the capability to generate a tunable ionic current could pave the way towards precise ion-system control in a broad range of biological applications« less

Inverted battery design as ion generator for interfacing with biosystems

PubMed Central

Wang, Chengwei; Fu, Kun (Kelvin); Dai, Jiaqi; Lacey, Steven D.; Yao, Yonggang; Pastel, Glenn; Xu, Lisha; Zhang, Jianhua; Hu, Liangbing

2017-01-01

In a lithium-ion battery, electrons are released from the anode and go through an external electronic circuit to power devices, while ions simultaneously transfer through internal ionic media to meet with electrons at the cathode. Inspired by the fundamental electrochemistry of the lithium-ion battery, we envision a cell that can generate a current of ions instead of electrons, so that ions can be used for potential applications in biosystems. Based on this concept, we report an ‘electron battery’ configuration in which ions travel through an external circuit to interact with the intended biosystem whereas electrons are transported internally. As a proof-of-concept, we demonstrate the application of the electron battery by stimulating a monolayer of cultured cells, which fluoresces a calcium ion wave at a controlled ionic current. Electron batteries with the capability to generate a tunable ionic current could pave the way towards precise ion-system control in a broad range of biological applications. PMID:28737174

Identification of Microbial Communities in Open and Closed Circuit Bioelectrochemical MBRs by High-Throughput 454 Pyrosequencing

PubMed Central

Huang, Jian; Wang, Zhiwei; Zhu, Chaowei; Ma, Jinxing; Zhang, Xingran; Wu, Zhichao

2014-01-01

Two bioelectrochemical membrane bioreactors (MBRs) developed by integrating microbial fuel cell and MBR technology were operated under closed-circuit and open-circuit modes, and high-throughput 454 pyrosequencing was used to investigate the effects of the power generation on the microbial community of bio-anode and bio-cathode. Microbes on the anode under open-circuit operation (AO) were enriched and highly diverse when compared to those on the anode under closed-circuit operation (AC). However, among the cathodes the closed-circuit mode (CC) had richer and more diverse microbial community compared to the cathode under open-circuit mode (CO). On the anodes AO and AC, Proteobacteria and Bacteroidetes were the dominant phyla, while Firmicutes was enriched only on AC. Deltaproteobacteria affiliated to Proteobacteria were also more abundant on AC than AO. Furthermore, the relative abundance of Desulfuromonas, which are well-known electrogenic bacteria, were much higher on AC (10.2%) when compared to AO (0.11%), indicating that closed-circuit operation was more conducive for the growth of electrogenic bacteria on the anodes. On the cathodes, Protebacteria was robust on CC while Bacteroidetes was more abundant on CO. Rhodobacter and Hydrogenophaga were also enriched on CC than CO, suggesting that these genera play a role in electron transfer from the cathode surface to the terminal electron acceptors in the bioelectrochemical MBR under closed-circuit operation. PMID:24705450

NASA Tech Briefs, August 1995. Volume 19, No. 8

NASA Technical Reports Server (NTRS)

1995-01-01

There is a special focus on computer graphics and simulation in this issue. Topics covered include : Electronic Components and Circuits; Electronic Systems; Physical Sciences; Materials; Computer programs, Mechanics; Machinery; Fabrication Technology; and Mathematics and Information Sciences. There is a section on for Laser Technology, which includes a feature on Moving closer to the suns power.

Synthesis of a fully-integrated digital signal source for communications from chaotic dynamics-based oscillations

NASA Astrophysics Data System (ADS)

Glenn, Chance Michael, Sr.

This work is the conceptualization, derivation, analysis, and fabrication of a fully practical digital signal source designed from a chaotic oscillator. In it we show how a simple electronic circuit based upon the Colpitts oscillator, can be made to produce highly complex signals capable of carrying digital information. We show a direct relationship between the continuous-time chaotic oscillations produced by the circuit and the logistic map, which is discrete-time, one-dimensional map that is a fundamental paradigm for the study of chaotic systems. We demonstrate the direct encoding of binary information into the oscillations of the chaotic circuit. We demonstrate a new concept in power amplification, called syncrodyne amplification , which uses fundamental properties of chaotic oscillators to provide high-efficiency, high gain amplification of standard communication waveforms as well as typical chaotic oscillations. We show modeling results of this system providing nearly 60-dB power gain and 80% PAE for communications waveforms conforming to GMSK modulation. Finally we show results from a fabricated syncrodyne amplifier circuit operating at 2 MHz, providing over 40-dB power gain and 72% PAE, and propose design criteria for an 824--850 MHz circuit utilizing heterojunction bipolar transistors (HBTs), providing the basis for microwave frequency realization.

Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes.

PubMed

McMorrow, Julian J; Cress, Cory D; Gaviria Rojas, William A; Geier, Michael L; Marks, Tobin J; Hersam, Mark C

2017-03-28

Increasingly complex demonstrations of integrated circuit elements based on semiconducting single-walled carbon nanotubes (SWCNTs) mark the maturation of this technology for use in next-generation electronics. In particular, organic materials have recently been leveraged as dopant and encapsulation layers to enable stable SWCNT-based rail-to-rail, low-power complementary metal-oxide-semiconductor (CMOS) logic circuits. To explore the limits of this technology in extreme environments, here we study total ionizing dose (TID) effects in enhancement-mode SWCNT-CMOS inverters that employ organic doping and encapsulation layers. Details of the evolution of the device transport properties are revealed by in situ and in operando measurements, identifying n-type transistors as the more TID-sensitive component of the CMOS system with over an order of magnitude larger degradation of the static power dissipation. To further improve device stability, radiation-hardening approaches are explored, resulting in the observation that SWNCT-CMOS circuits are TID-hard under dynamic bias operation. Overall, this work reveals conditions under which SWCNTs can be employed for radiation-hard integrated circuits, thus presenting significant potential for next-generation satellite and space applications.

Controllable Bidirectional dc Power Sources For Large Loads

NASA Technical Reports Server (NTRS)

Tripp, John S.; Daniels, Taumi S.

1995-01-01

System redesigned for greater efficiency, durability, and controllability. Modern electronically controlled dc power sources proposed to supply currents to six electromagnets used to position aerodynamic test model in wind tunnel. Six-phase bridge rectifier supplies load with large current at voltage of commanded magnitude and polarity. Current-feedback circuit includes current-limiting feature giving some protection against overload.

Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Y.; Zhong, Y. P.; Deng, Y. F.

2013-12-21

Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices.

Ferruleless coupled-cavity traveling-wave tube cold-test characteristics simulated with micro-SOS

NASA Technical Reports Server (NTRS)

Schroeder, Dana L.; Wilson, Jeffrey D.

1993-01-01

The three-dimensional, electromagnetic circuit analysis code, Micro-SOS, can be used to reduce expensive and time consuming experimental 'cold-testing' of traveling-wave tube (TWT) circuits. The frequency-phase dispersion and beam interaction impedance characteristics of a ferruleless coupled-cavity traveling-wave tube slow-wave circuit were simulated using the code. Computer results agree closely with experimental data. Variations in the cavity geometry dimensions of period length and gap-to-period ratio were modeled. These variations can be used in velocity taper designs to reduce the radiofrequency (RF) phase velocity in synchronism with the decelerating electron beam. Such circuit designs can result in enhanced TWT power and efficiency.

Toward Revealing the Critical Role of Perovskite Coverage in Highly Efficient Electron-Transport Layer-Free Perovskite Solar Cells: An Energy Band and Equivalent Circuit Model Perspective.

PubMed

Huang, Like; Xu, Jie; Sun, Xiaoxiang; Du, Yangyang; Cai, Hongkun; Ni, Jian; Li, Juan; Hu, Ziyang; Zhang, Jianjun

2016-04-20

Currently, most efficient perovskite solar cells (PVKSCs) with a p-i-n structure require simultaneously electron transport layers (ETLs) and hole transport layers (HTLs) to help collecting photogenerated electrons and holes for obtaining high performance. ETL free planar PVKSC is a relatively new and simple structured solar cell that gets rid of the complex and high temperature required ETL (such as compact and mesoporous TiO2). Here, we demonstrate the critical role of high coverage of perovskite in efficient ETL free PVKSCs from an energy band and equivalent circuit model perspective. From an electrical point of view, we confirmed that the low coverage of perovskite does cause localized short circuit of the device. With coverage optimization, a planar p-i-n(++) device with a power conversion efficiency of over 11% was achieved, implying that the ETL layer may not be necessary for an efficient device as long as the perovskite coverage is approaching 100%.

Correlation of energy disorder and open-circuit voltage in hybrid perovskite solar cells

DOE PAGES

Shao, Yuchuan; Yuan, Yongbo; Huang, Jinsong

2016-01-11

Organometal trihalide perovskites have been demonstrated as excellent light absorbers for high efficiency photovoltaic applications. Previous approaches to increasing the solar cell efficiency have focussed on optimisation of the grain morphology of perovskite thin films. Here, we show that the structural order of the electron-transport layers also has a significant impact on solar cell performance. We demonstrate that the power conversion efficiency of CH 3NH 3PbI 3 planar-heterojunction photovoltaic cells increases from 17.1% to 19.4% when the energy disorder in the fullerene electron-transport layer is reduced by a simple solvent annealing process. The increase in efficiency is the result ofmore » the enhancement in open-circuit voltage from 1.04 V to 1.13 V without sacrificing the short-circuit current and fill factor. Finally, these results shed light on the origin of open-circuit voltage in perovskite solar cells, and provide a new path to further increase their efficiency« less

Development of the automatic test pattern generation for NPP digital electronic circuits using the degree of freedom concept

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, D.S.; Seong, P.H.

1995-08-01

In this paper, an improved algorithm for automatic test pattern generation (ATG) for nuclear power plant digital electronic circuits--the combinational type of logic circuits is presented. For accelerating and improving the ATG process for combinational circuits the presented ATG algorithm has the new concept--the degree of freedom (DF). The DF, directly computed from the system descriptions such as types of gates and their interconnections, is the criterion to decide which among several alternate lines` logic values required along each path promises to be the most effective in order to accelerate and improve the ATG process. Based on the DF themore » proposed ATG algorithm is implemented in the automatic fault diagnosis system (AFDS) which incorporates the advanced fault diagnosis method of artificial intelligence technique, it is shown that the AFDS using the ATG algorithm makes Universal Card (UV Card) testing much faster than the present testing practice or by using exhaustive testing sets.« less

On Polymorphic Circuits and Their Design Using Evolutionary Algorithms

NASA Technical Reports Server (NTRS)

Stoica, Adrian; Zebulum, Ricardo; Keymeulen, Didier; Lohn, Jason; Clancy, Daniel (Technical Monitor)

2002-01-01

This paper introduces the concept of polymorphic electronics (polytronics) - referring to electronics with superimposed built-in functionality. A function change does not require switches/reconfiguration as in traditional approaches. Instead the change comes from modifications in the characteristics of devices involved in the circuit, in response to controls such as temperature, power supply voltage (VDD), control signals, light, etc. The paper illustrates polytronic circuits in which the control is done by temperature, morphing signals, and VDD respectively. Polytronic circuits are obtained by evolutionary design/evolvable hardware techniques. These techniques are ideal for the polytronics design, a new area that lacks design guidelines, know-how,- yet the requirements/objectives are easy to specify and test. The circuits are evolved/synthesized in two different modes. The first mode explores an unstructured space, in which transistors can be interconnected freely in any arrangement (in simulations only). The second mode uses a Field Programmable Transistor Array (FPTA) model, and the circuit topology is sought as a mapping onto a programmable architecture (these experiments are performed both in simulations and on FPTA chips). The experiments demonstrated the synthesis. of polytronic circuits by evolution. The capacity of storing/hiding "extra" functions provides for watermark/invisible functionality, thus polytronics may find uses in intelligence/security applications.

Electro-Thermal Transient Simulation of Silicon Carbide Power Mosfet

DTIC Science & Technology

2013-06-01

ionization rate than electron in silicon carbide , the breakdown voltage almost remains constant even at elevated temperatures . This is due to the positive... temperature coefficient of holes in case of silicon carbide as discussed in [7, 8]. The higher ambient temperature influences the leakage current...in the RLC ring down circuit . E. Power Dissipation and Lattice Temperature The power dissipation for any switching device is dependent on the

A High Performance Delta-Sigma Modulator for Neurosensing

PubMed Central

Xu, Jian; Zhao, Menglian; Wu, Xiaobo; Islam, Md. Kafiul; Yang, Zhi

2015-01-01

Recorded neural data are frequently corrupted by large amplitude artifacts that are triggered by a variety of sources, such as subject movements, organ motions, electromagnetic interferences and discharges at the electrode surface. To prevent the system from saturating and the electronics from malfunctioning due to these large artifacts, a wide dynamic range for data acquisition is demanded, which is quite challenging to achieve and would require excessive circuit area and power for implementation. In this paper, we present a high performance Delta-Sigma modulator along with several design techniques and enabling blocks to reduce circuit area and power. The modulator was fabricated in a 0.18-μm CMOS process. Powered by a 1.0-V supply, the chip can achieve an 85-dB peak signal-to-noise-and-distortion ratio (SNDR) and an 87-dB dynamic range when integrated over a 10-kHz bandwidth. The total power consumption of the modulator is 13 μW, which corresponds to a figure-of-merit (FOM) of 45 fJ/conversion step. These competitive circuit specifications make this design a good candidate for building high precision neurosensors. PMID:26262623

The assessment of exploitation process of power for access control system

NASA Astrophysics Data System (ADS)

Wiśnios, Michał; Paś, Jacek

2017-10-01

The safety of public utility facilities is a function not only of effectiveness of the electronic safety systems, used for protection of property and persons, but it also depends on the proper functioning of their power supply systems. The authors of the research paper analysed the power supply systems, which are used in buildings for the access control system that is integrated with the closed-circuit TV. The Access Control System is a set of electronic, electromechanical and electrical devices and the computer software controlling the operation of the above-mentioned elements, which is aimed at identification of people, vehicles allowed to cross the boundary of the reserved area, to prevent from crossing the reserved area and to generate the alarm signal informing about the attempt of crossing by an unauthorised entity. The industrial electricity with appropriate technical parameters is a basis of proper functioning of safety systems. Only the electricity supply to the systems is not equivalent to the operation continuity provision. In practice, redundant power supply systems are used. In the carried out reliability analysis of the power supply system, various power circuits of the system were taken into account. The reliability and operation requirements for this type of system were also included.

Control voltage and power fluctuations when connecting wind farms

NASA Astrophysics Data System (ADS)

Berinde, Ioan; Bǎlan, Horia; Oros Pop, Teodora Susana

2015-12-01

Voltage, frequency, active power and reactive power are very important parameters in terms of power quality. These parameters are followed when connecting any power plant, the more the connection of wind farms. Connecting wind farms to the electricity system must not cause interference outside the limits set by regulations. Modern solutions for fast and automatic voltage control and power fluctuations using electronic control systems of reactive power flows. FACTS (Flexible Alternating Current Transmision System) systems, established on the basis of power electronic circuits ensure control of electrical status quantities to achieve the necessary transfer of power to the power grid. FACTS devices can quickly control parameters and sizes of state power lines, such as impedance line voltages and phase angles of the voltages of the two ends of the line. Their use can lead to improvement in power system operation by increasing the transmission capacity of power lines, power flow control lines, improved static and transient stability reserve.

Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Di Pendina, G., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr; Zianbetov, E., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr; CNRS, SPINTEC, F-38000 Grenoble

2015-05-07

Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remainingmore » in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.« less

Simplified Design Equations for Class-E Neural Prosthesis Transmitters

PubMed Central

Troyk, Philip; Hu, Zhe

2013-01-01

Extreme miniaturization of implantable electronic devices is recognized as essential for the next generation of neural prostheses, owing to the need for minimizing the damage and disruption of the surrounding neural tissue. Transcutaneous power and data transmission via a magnetic link remains the most effective means of powering and controlling implanted neural prostheses. Reduction in the size of the coil, within the neural prosthesis, demands the generation of a high-intensity radio frequency magnetic field from the extracoporeal transmitter. The Class-E power amplifier circuit topology has been recognized as a highly effective means of producing large radio frequency currents within the transmitter coil. Unfortunately, design of a Class-E circuit is most often fraught by the need to solve a complex set of equations so as to implement both the zero-voltage-switching and zero-voltage-derivative-switching conditions that are required for efficient operation. This paper presents simple explicit design equations for designing the Class-E circuit topology. Numerical design examples are presented to illustrate the design procedure. PMID:23292784

A self-powered glucose biosensor based on pyrolloquinoline quinone glucose dehydrogenase and bilirubin oxidase operating under physiological conditions.

PubMed

Kulkarni, Tanmay; Slaughter, Gymama

2017-07-01

A novel biosensing system capable of simultaneously sensing glucose and powering portable electronic devices such as a digital glucometer is described. The biosensing system consists of enzymatic glucose biofuel cell bioelectrodes functionalized with pyrolloquinoline quinone glucose dehydrogenase (PQQ-GDH) and bilirubin oxidase (BOD) at the bioanode and biocathode, respectively. A dual-stage power amplification circuit is integrated with the single biofuel cell to amplify the electrical power generated. In addition, a capacitor circuit was incorporated to serve as the transducer for sensing glucose. The open circuit voltage of the optimized biofuel cell reached 0.55 V, and the maximum power density achieved was 0.23 mW/ cm 2 at 0.29 V. The biofuel cell exhibited a sensitivity of 0.312 mW/mM.cm 2 with a linear dynamic range of 3 mM - 20 mM glucose. The overall self-powered glucose biosensor is capable of selectively screening against common interfering species, such as ascorbate and urate and exhibited an operational stability of over 53 days, while maintaining 90 % of its activity. These results demonstrate the system's potential to replace the current glucose monitoring devices that rely on external power supply, such as a battery.

Threshold self-powered gamma detector for use as a monitor of power in a nuclear reactor

DOEpatents

LeVert, Francis E.; Cox, Samson A.

1978-01-01

A self-powered gamma monitor for placement near the core of a nuclear reactor comprises a lead prism surrounded by a coaxial thin nickel sheet, the combination forming a collector. A coaxial polyethylene electron barrier encloses the collector and is separated from the nickel sheet by a vacuum region. The electron barrier is enclosed by a coaxial stainless steel emitter which, in turn, is enclosed within a lead casing. When the detector is placed in a flux of gamma rays, a measure of the current flow in an external circuit between emitter and collector provides a measure of the power level of the reactor.

Power electronic interface circuits for batteries and ultracapacitors in electric vehicles and battery storage systems

DOEpatents

King, Robert Dean; DeDoncker, Rik Wivina Anna Adelson

1998-01-01

A method and apparatus for load leveling of a battery in an electrical power system includes a power regulator coupled to transfer power between a load and a DC link, a battery coupled to the DC link through a first DC-to-DC converter and an auxiliary passive energy storage device coupled to the DC link through a second DC-to-DC converter. The battery is coupled to the passive energy storage device through a unidirectional conducting device whereby the battery can supply power to the DC link through each of the first and second converters when battery voltage exceeds voltage on the passive storage device. When the load comprises a motor capable of operating in a regenerative mode, the converters are adapted for transferring power to the battery and passive storage device. In this form, resistance can be coupled in circuit with the second DC-to-DC converter to dissipate excess regenerative power.

Power electronic interface circuits for batteries and ultracapacitors in electric vehicles and battery storage systems

DOEpatents

King, R.D.; DeDoncker, R.W.A.A.

1998-01-20

A method and apparatus for load leveling of a battery in an electrical power system includes a power regulator coupled to transfer power between a load and a DC link, a battery coupled to the DC link through a first DC-to-DC converter and an auxiliary passive energy storage device coupled to the DC link through a second DC-to-DC converter. The battery is coupled to the passive energy storage device through a unidirectional conducting device whereby the battery can supply power to the DC link through each of the first and second converters when battery voltage exceeds voltage on the passive storage device. When the load comprises a motor capable of operating in a regenerative mode, the converters are adapted for transferring power to the battery and passive storage device. In this form, resistance can be coupled in circuit with the second DC-to-DC converter to dissipate excess regenerative power. 8 figs.

Laboratory and Field Testing of NYCTA Power Frequency Track Circuits

DOT National Transportation Integrated Search

1986-02-01

This report addresses the possible electromagnetic interference between the electronic AC propulsion control systems and the signaling and train control systems. The potential exists for AC-drive propulsion systems to cause EMI that can adversely aff...

Design of an FPGA-based electronic flow regulator (EFR) for spacecraft propulsion system

NASA Astrophysics Data System (ADS)

Manikandan, J.; Jayaraman, M.; Jayachandran, M.

2011-02-01

This paper describes a scheme for electronically regulating the flow of propellant to the thruster from a high-pressure storage tank used in spacecraft application. Precise flow delivery of propellant to thrusters ensures propulsion system operation at best efficiency by maximizing the propellant and power utilization for the mission. The proposed field programmable gate array (FPGA) based electronic flow regulator (EFR) is used to ensure precise flow of propellant to the thrusters from a high-pressure storage tank used in spacecraft application. This paper presents hardware and software design of electronic flow regulator and implementation of the regulation logic onto an FPGA.Motivation for proposed FPGA-based electronic flow regulation is on the disadvantages of conventional approach of using analog circuits. Digital flow regulation overcomes the analog equivalent as digital circuits are highly flexible, are not much affected due to noise, accurate performance is repeatable, interface is easier to computers, storing facilities are possible and finally failure rate of digital circuits is less. FPGA has certain advantages over ASIC and microprocessor/micro-controller that motivated us to opt for FPGA-based electronic flow regulator. Also the control algorithm being software, it is well modifiable without changing the hardware. This scheme is simple enough to adopt for a wide range of applications, where the flow is to be regulated for efficient operation.The proposed scheme is based on a space-qualified re-configurable field programmable gate arrays (FPGA) and hybrid micro circuit (HMC). A graphical user interface (GUI) based application software is also developed for debugging, monitoring and controlling the electronic flow regulator from PC COM port.

The 20 kilovolt rocket borne electron accelerator. [equipment specifications

NASA Technical Reports Server (NTRS)

Harrison, R.

1973-01-01

The accelerator system is a preprogrammed multi-voltage system capable of operating at a current level of 1/2 ampere at the 20 kilovolt level. The five major functional areas which comprise this system are: (1) Silver zinc battery packs; (2) the electron gun assembly; (3) gun control and opening circuits; (4) the telemetry conditioning section; and (5) the power conversion section.

Microcomputer control of an electronically commutated dc motor

NASA Astrophysics Data System (ADS)

El-Sharkawi, M. A.; Coleman, J. S.; Mehdi, I. S.; Sommer, D. L.

A microcomputer control system for an electronically commutated dc motor (ECM) has been designed, built and tested. A 3-hp, 270-volt, samarium-cobalt brushless dc motor is controlled by an Intel 8086-based microcomputer. The main functions of the microcomputer are to control the speed of the motor, to provide forward or reverse rotation, to brake, and to protect the motor and its power electronic switching circuits from overcurrents. The necessary interface circuits were designed and built, and the system components have been integrated and tested. It is shown that the proposed ECM system with the microcomputer control operate the motor reliably over a wide range of speeds. The purpose of this effort is to develop the motorcontroller for driving electromechanical actuators for flight control and other aircraft applications.

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO 2 Contact

DOE PAGES

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; ...

2014-09-25

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (~10 nm) of amorphous TiO 2 deposited at 120°C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. Lastly, a hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency ofmore » 19.2%.« less

Two-dimensional materials based transparent flexible electronics

NASA Astrophysics Data System (ADS)

Yu, Lili; Ha, Sungjae; El-Damak, Dina; McVay, Elaine; Ling, Xi; Chandrakasan, Anantha; Kong, Jing; Palacios, Tomas

2015-03-01

Two-dimensional (2D) materials have generated great interest recently as a set of tools for electronics, as these materials can push electronics beyond traditional boundaries. These materials and their heterostructures offer excellent mechanical flexibility, optical transparency, and favorable transport properties for realizing electronic, sensing, and optical systems on arbitrary surfaces. These thin, lightweight, bendable, highly rugged and low-power devices may bring dramatic changes in information processing, communications and human-electronic interaction. In this report, for the first time, we demonstrate two complex transparent flexible systems based on molybdenum disulfide (MoS2) grown by chemical vapor method: a transparent active-matrix organic light-emitting diode (AMOLED) display and a MoS2 wireless link for sensor nodes. The 1/2 x 1/2 square inch, 4 x 5 pixels AMOLED structures are built on transparent substrates, containing MoS2 back plane circuit and OLEDs integrated on top of it. The back plane circuit turns on and off the individual pixel with two MoS2 transistors and a capacitor. The device is designed and fabricated based on SPICE simulation to achieve desired DC and transient performance. We have also demonstrated a MoS2 wireless self-powered sensor node. The system consists of as energy harvester, rectifier, sensor node and logic units. AC signals from the environment, such as near-field wireless power transfer, piezoelectric film and RF signal, are harvested, then rectified into DC signal by a MoS2 diode. CIQM, CICS, SRC.

Buck-boost converter for simultaneous semi-active vibration control and energy harvesting for electromagnetic regenerative shock absorber

NASA Astrophysics Data System (ADS)

Li, Peng; Zhang, Chongxiao; Kim, Junyoung; Yu, Liangyao; Zuo, Lei

2014-04-01

Regenerative semi-active suspensions can capture the previously dissipated vibration energy and convert it to usable electrical energy for powering on-board electronic devices, while achieve both the better ride comfort and improved road handling performance at the same time when certain control is applied. To achieve this objective, the power electronics interface circuit connecting the energy harvester and the electrical loads, which can perform simultaneous vibration control and energy harvesting function is in need. This paper utilized a buck-boost converter for simultaneous semi-active vibration control and energy harvesting with electromagnetic regenerative shock absorber, which utilizes a rotational generator to converter the vibration energy to electricity. It has been found that when the circuit works in discontinuous current mode (DCM), the ratio between the input voltage and current is only related to the duty cycle of the switch pulse width modulation signal. Using this property, the buck-boost converter can be used to perform semi-active vibration control by controlling the load connected between the terminals of the generator in the electromagnetic shock absorber. While performing the vibration control, the circuit always draw current from the shock absorber and the suspension remain dissipative, and the shock absorber takes no additional energy to perform the vibration control. The working principle and dynamics of the circuit has been analyzed and simulations were performed to validate the concept.

Porous polymer composite membrane based nanogenerator: A realization of self-powered wireless green energy source for smart electronics applications

NASA Astrophysics Data System (ADS)

Ghosh, Sujoy Kumar; Sinha, Tridib Kumar; Mahanty, Biswajit; Jana, Santanu; Mandal, Dipankar

2016-11-01

An efficient, flexible and unvaryingly porous polymer composite membrane based nanogenerator (PPCNG) without any electrical poling treatment has been realised as wireless green energy source to power up smart electronic gadgets. Owing to self-polarized piezo- and ferro-electretic phenomenon of in situ platinum nanoparticles (Pt-NPs) doped porous poly(vinylidenefluoride-co-hexafluoropropylene)-membrane, a simple, inexpensive and scalable PPCNG fabrication is highlighted. The molecular orientations of the -CH2/-CF2 dipoles that cause self-polarization phenomenon has been realized by angular dependent near edge X-ray absorption fine structure spectroscopy. The square-like hysteresis loop with giant remnant polarization, Pr ˜ 68 μC/cm2 and exceptionally high piezoelectric charge coefficient, d33 ˜ - 836 pC/N promises a best suited ferro- and piezo-electretic membrane. The PPCNG exhibits a high electrical throughput such as, ranging from 2.7 V to 23 V of open-circuit voltage (Voc) and 2.9 μA to 24.7 μA of short-circuit current (Isc) under 0.5 MPa to 4.3 MPa of imparted stress amplitude by periodic human finger motion. The harvested mechanical and subsequent electrical energy by PPCNG is shown to transfer wirelessly via visible and infrared transmitter-receiver systems, where 17% and 49% of wireless power transfer efficiency, respectively, has been realized to power up several consumer electronics.

An in situ trap capacitance measurement and ion-trapping detection scheme for a Penning ion trap facility.

PubMed

Reza, Ashif; Banerjee, Kumardeb; Das, Parnika; Ray, Kalyankumar; Bandyopadhyay, Subhankar; Dam, Bivas

2017-03-01

This paper presents the design and implementation of an in situ measurement setup for the capacitance of a five electrode Penning ion trap (PIT) facility at room temperature. For implementing a high Q resonant circuit for the detection of trapped electrons/ions in a PIT, the value of the capacitance of the trap assembly is of prime importance. A tunable Colpitts oscillator followed by a unity gain buffer and a low pass filter is designed and successfully implemented for a two-fold purpose: in situ measurement of the trap capacitance when the electric and magnetic fields are turned off and also providing RF power at the desired frequency to the PIT for exciting the trapped ions and subsequent detection. The setup is tested for the in situ measurement of trap capacitance at room temperature and the results are found to comply with those obtained from measurements using a high Q parallel resonant circuit setup driven by a standard RF signal generator. The Colpitts oscillator is also tested successfully for supplying RF power to the high Q resonant circuit, which is required for the detection of trapped electrons/ions.

Low power signal processing electronics for wearable medical devices.

PubMed

Casson, Alexander J; Rodriguez-Villegas, Esther

2010-01-01

Custom designed microchips, known as Application Specific Integrated Circuits (ASICs), offer the lowest possible power consumption electronics. However, this comes at the cost of a longer, more complex and more costly design process compared to one using generic, off-the-shelf components. Nevertheless, their use is essential in future truly wearable medical devices that must operate for long periods of time from physically small, energy limited batteries. This presentation will demonstrate the state-of-the-art in ASIC technology for providing online signal processing for use in these wearable medical devices.

Space power plants

NASA Astrophysics Data System (ADS)

Khudyakov, S. A.

1985-05-01

Power generators in space are examined. A semiconducting photoelectric converter (FEP) which converts the energy of solar radiation directly into electrical energy is discussed. The operating principle of an FEP is based on the interaction of solar light with a crystal semiconductor, in the process of which the photons produce free electrons, carriers of an electrical charge, in the crystal. Areas with a strong electrical field created specially under the effect of the p-n junction trap the freed electrons and divide them in such a fashion that a current and corresponding electrical power appear in the load circuit. The absorption of light in metals and pure semiconductors is outlined.

Waveguide Power-Amplifier Module for 80 to 150 GHz

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Weinreb, Sander; Peralta, Alejandro

2006-01-01

A waveguide power-amplifier module capable of operating over the frequency range from 80 to 150 GHz has been constructed. The module comprises a previously reported power amplifier packaged in a waveguide housing that is compatible with WR-8 waveguides. (WR- 8 is a standard waveguide size for the nominal frequency range from 90 to 140 GHz.) The waveguide power-amplifier module is robust and can be bolted to test equipment and to other electronic circuits with which the amplifier must be connected for normal operation.

Radio frequency analog electronics based on carbon nanotube transistors

PubMed Central

Kocabas, Coskun; Kim, Hoon-sik; Banks, Tony; Rogers, John A.; Pesetski, Aaron A.; Baumgardner, James E.; Krishnaswamy, S. V.; Zhang, Hong

2008-01-01

The potential to exploit single-walled carbon nanotubes (SWNTs) in advanced electronics represents a continuing, major source of interest in these materials. However, scalable integration of SWNTs into circuits is challenging because of difficulties in controlling the geometries, spatial positions, and electronic properties of individual tubes. We have implemented solutions to some of these challenges to yield radio frequency (RF) SWNT analog electronic devices, such as narrow band amplifiers operating in the VHF frequency band with power gains as high as 14 dB. As a demonstration, we fabricated nanotube transistor radios, in which SWNT devices provide all of the key functions, including resonant antennas, fixed RF amplifiers, RF mixers, and audio amplifiers. These results represent important first steps to practical implementation of SWNTs in high-speed analog circuits. Comparison studies indicate certain performance advantages over silicon and capabilities that complement those in existing compound semiconductor technologies. PMID:18227509

Pulsed depressed collector

DOEpatents

Kemp, Mark A

2015-11-03

A high power RF device has an electron beam cavity, a modulator, and a circuit for feed-forward energy recovery from a multi-stage depressed collector to the modulator. The electron beam cavity include a cathode, an anode, and the multi-stage depressed collector, and the modulator is configured to provide pulses to the cathode. Voltages of the electrode stages of the multi-stage depressed collector are allowed to float as determined by fixed impedances seen by the electrode stages. The energy recovery circuit includes a storage capacitor that dynamically biases potentials of the electrode stages of the multi-stage depressed collector and provides recovered energy from the electrode stages of the multi-stage depressed collector to the modulator. The circuit may also include a step-down transformer, where the electrode stages of the multi-stage depressed collector are electrically connected to separate taps on the step-down transformer.

Radiation damage in high voltage silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Brandhorst, H., Jr.; Swartz, C. K.; Weizer, V. G.

1980-01-01

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE cell). The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Surface and allied studies in silicon solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1984-01-01

Measuring small-signal admittance versus frequency and forward bias voltage together with a new transient measurement apparently provides the most reliable and flexible method available for determining back surface recombination velocity and low-injection lifetime of the quasineutral base region of silicon solar cells. The new transient measurement reported here is called short-circuit-current decay (SCCD). In this method, forward voltage equal to about the open-circuit or the maximum power voltage establishes excess holes and electrons in the junction transition region and in the quasineutral regions. The sudden application of a short circuit causes an exiting of the excess holes and electrons in the transition region within about ten picoseconds. From observing the slope and intercept of the subsequent current decay, the base lifetime and surface recombination velocity can be determined. The admittance measurement previously mentioned then enters to increase accuracy particularly for devices for which the diffusion length exceeds the base thickness.

A cryogenic DAC operating down to 4.2 K

NASA Astrophysics Data System (ADS)

Rahman, M. T.; Lehmann, T.

2016-04-01

This paper presents a 10 bit CMOS current steering digital to analog converter (DAC) that operates from room temperature to as low as 4.2 K. It works as the core part of a cryogenic Silicon quantum computer controller circuit producing rapid control gate voltage pulses for quantum bits (qubits) initialization. An improved analog calibration method with a unique unit current cell design is included in the D/A converter structure to overcome the extended cryogenic nonlinear and mismatch effects. The DAC retains its 10 bit linear monotonic behavior over the wide temperature range and it drives a 50 Ω load to 516 mV with a full scale rise time of 10 ns. The differential non-linearity (DNL) of the converter is 0.35LSB while its average power consumption is 32.18 mW from a 3 V power supply. The complete converter is fabricated using a commercial 0.5 μm 1 poly 3 metal Silicon on Sapphire (SOS) CMOS process. He briefly worked as a Lecturer in the Stamford University Bangladesh prior to starting his Ph.D. in 2012 in the School of Electrical Engineering and Telecommunications, UNSW. His Ph.D. research is focused on cryogenic electronics for Quantum Computer Interface. His main research interests are in designing data converters for ultra-low temperature electronics and biomedical applications. He spent two years as a Research Fellow at the University of Edinburgh, U.K., where he worked with biologically inspired artificial neural systems. From 1997 to 2000, he was an Assistant Professor in electronics at the Technical University of Denmark, working with low-power low-noise low-voltage analog and mixed analog-digital integrated circuits. From 2001 to 2003 he was Principal Engineer with Cochlear Ltd., Australia, where he was involved in the design of the world's first fully implantable cochlear implant. Today he is Associate Professor in microelectronics at the University of New South Wales, Australia. He has authored over 100 journal papers, conference papers, book chapters and patents in microelectronic circuit design for a range of applications. His main research interests are in solid-state circuits and systems (analog and digital), biomedical microelectronics, ultra-low temperature electronics, nanometre CMOS, and green electronics.

Packaging printed circuit boards: A production application of interactive graphics

NASA Technical Reports Server (NTRS)

Perrill, W. A.

1975-01-01

The structure and use of an Interactive Graphics Packaging Program (IGPP), conceived to apply computer graphics to the design of packaging electronic circuits onto printed circuit boards (PCB), were described. The intent was to combine the data storage and manipulative power of the computer with the imaginative, intuitive power of a human designer. The hardware includes a CDC 6400 computer and two CDC 777 terminals with CRT screens, light pens, and keyboards. The program is written in FORTRAN 4 extended with the exception of a few functions coded in COMPASS (assembly language). The IGPP performs four major functions for the designer: (1) data input and display, (2) component placement (automatic or manual), (3) conductor path routing (automatic or manual), and (4) data output. The most complex PCB packaged to date measured 16.5 cm by 19 cm and contained 380 components, two layers of ground planes and four layers of conductors mixed with ground planes.

A synthetic mammalian electro-genetic transcription circuit.

PubMed

Weber, Wilfried; Luzi, Stefan; Karlsson, Maria; Sanchez-Bustamante, Carlota Diaz; Frey, Urs; Hierlemann, Andreas; Fussenegger, Martin

2009-03-01

Electric signal processing has evolved to manage rapid information transfer in neuronal networks and muscular contraction in multicellular organisms and controls the most sophisticated man-built devices. Using a synthetic biology approach to assemble electronic parts with genetic control units engineered into mammalian cells, we designed an electric power-adjustable transcription control circuit able to integrate the intensity of a direct current over time, to translate the amplitude or frequency of an alternating current into an adjustable genetic readout or to modulate the beating frequency of primary heart cells. Successful miniaturization of the electro-genetic devices may pave the way for the design of novel hybrid electro-genetic implants assembled from electronic and genetic parts.

A synthetic mammalian electro-genetic transcription circuit

PubMed Central

Weber, Wilfried; Luzi, Stefan; Karlsson, Maria; Sanchez-Bustamante, Carlota Diaz; Frey, Urs; Hierlemann, Andreas; Fussenegger, Martin

2009-01-01

Electric signal processing has evolved to manage rapid information transfer in neuronal networks and muscular contraction in multicellular organisms and controls the most sophisticated man-built devices. Using a synthetic biology approach to assemble electronic parts with genetic control units engineered into mammalian cells, we designed an electric power-adjustable transcription control circuit able to integrate the intensity of a direct current over time, to translate the amplitude or frequency of an alternating current into an adjustable genetic readout or to modulate the beating frequency of primary heart cells. Successful miniaturization of the electro-genetic devices may pave the way for the design of novel hybrid electro-genetic implants assembled from electronic and genetic parts. PMID:19190091

Silicon/III-V laser with super-compact diffraction grating for WDM applications in electronic-photonic integrated circuits.

PubMed

Wang, Yadong; Wei, Yongqiang; Huang, Yingyan; Tu, Yongming; Ng, Doris; Lee, Cheewei; Zheng, Yunan; Liu, Boyang; Ho, Seng-Tiong

2011-01-31

We have demonstrated a heterogeneously integrated III-V-on-Silicon laser based on an ultra-large-angle super-compact grating (SCG). The SCG enables single-wavelength operation due to its high-spectral-resolution aberration-free design, enabling wavelength division multiplexing (WDM) applications in Electronic-Photonic Integrated Circuits (EPICs). The SCG based Si/III-V laser is realized by fabricating the SCG on silicon-on-insulator (SOI) substrate. Optical gain is provided by electrically pumped heterogeneous integrated III-V material on silicon. Single-wavelength lasing at 1550 nm with an output power of over 2 mW and a lasing threshold of around 150 mA were achieved.

A Low Noise CMOS Readout Based on a Polymer-Coated SAW Array for Miniature Electronic Nose

PubMed Central

Wu, Cheng-Chun; Liu, Szu-Chieh; Chiu, Shih-Wen; Tang, Kea-Tiong

2016-01-01

An electronic nose (E-Nose) is one of the applications for surface acoustic wave (SAW) sensors. In this paper, we present a low-noise complementary metal–oxide–semiconductor (CMOS) readout application-specific integrated circuit (ASIC) based on an SAW sensor array for achieving a miniature E-Nose. The center frequency of the SAW sensors was measured to be approximately 114 MHz. Because of interference between the sensors, we designed a low-noise CMOS frequency readout circuit to enable the SAW sensor to obtain frequency variation. The proposed circuit was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm 1P6M CMOS process technology. The total chip size was nearly 1203 × 1203 μm2. The chip was operated at a supply voltage of 1 V for a digital circuit and 1.8 V for an analog circuit. The least measurable difference between frequencies was 4 Hz. The detection limit of the system, when estimated using methanol and ethanol, was 0.1 ppm. Their linearity was in the range of 0.1 to 26,000 ppm. The power consumption levels of the analog and digital circuits were 1.742 mW and 761 μW, respectively. PMID:27792131

A Low Noise CMOS Readout Based on a Polymer-Coated SAW Array for Miniature Electronic Nose.

PubMed

Wu, Cheng-Chun; Liu, Szu-Chieh; Chiu, Shih-Wen; Tang, Kea-Tiong

2016-10-25

An electronic nose (E-Nose) is one of the applications for surface acoustic wave (SAW) sensors. In this paper, we present a low-noise complementary metal-oxide-semiconductor (CMOS) readout application-specific integrated circuit (ASIC) based on an SAW sensor array for achieving a miniature E-Nose. The center frequency of the SAW sensors was measured to be approximately 114 MHz. Because of interference between the sensors, we designed a low-noise CMOS frequency readout circuit to enable the SAW sensor to obtain frequency variation. The proposed circuit was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm 1P6M CMOS process technology. The total chip size was nearly 1203 × 1203 μm². The chip was operated at a supply voltage of 1 V for a digital circuit and 1.8 V for an analog circuit. The least measurable difference between frequencies was 4 Hz. The detection limit of the system, when estimated using methanol and ethanol, was 0.1 ppm. Their linearity was in the range of 0.1 to 26,000 ppm. The power consumption levels of the analog and digital circuits were 1.742 mW and 761 μW, respectively.

Conductive surge testing of circuits and systems

NASA Technical Reports Server (NTRS)

Richman, P.

1980-01-01

Techniques are given for conductive surge testing of powered electronic equipment. The correct definitions of common and normal mode are presented. Testing requires not only spike-surge generators with a suitable range of open-circuit voltage and short-circuit current waveshapes, but also appropriate means, termed couplers, for connecting test surges to the equipment under test. Key among coupler design considerations is minimization of fail positives resulting from reduction in delivered surge energy due to the coupler. Back-filters and the lines on which they are necessary, are considered as well as ground-fault and ground potential rise. A method for monitoring delivered and resulting surge waves is mentioned.

A Hybrid Converter for Improving Light Load Efficiency

NASA Astrophysics Data System (ADS)

Takahashi, Masaya; Nishijima, Kimihiro; Nagao, Michihiko; Sato, Terukazu; Nabeshima, Takashi

In order to reduce power consumption of electronic equipment in stand-by mode, idle-mode and sleep-mode, a simple efficiency improvement technique for switching regulator in light load region is proposed. In this technique, under the light load, the small switching elements in a MOSFET driver circuit are used instead of the switching elements in a main regulator circuit to reduce driving losses. Of course, under the load heavier than light load, the MOSFET driver drives the switching elements in the main regulator circuit. The efficiency of a 2.5V/5A prototype buck converter is improved from 47.1% to 72.7% by using the proposed technique.

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

PubMed

Yu, Lili; Zubair, Ahmad; Santos, Elton J G; Zhang, Xu; Lin, Yuxuan; Zhang, Yuhao; Palacios, Tomás

2015-08-12

Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (∼38) and small static power (picowatts), paving the way for low power electronic system in 2D materials.

A triple hybrid micropower generator with simultaneous multi-mode energy harvesting

NASA Astrophysics Data System (ADS)

Uluşan, H.; Chamanian, S.; Pathirana, W. P. M. R.; Zorlu, Ö.; Muhtaroğlu, A.; Külah, H.

2018-01-01

This study presents a triple hybrid energy harvesting system that combines harvested power from thermoelectric (TE), vibration-based electromagnetic (EM) and piezoelectric (PZT) harvesters into a single DC supply. A power management circuit is designed and implemented in 180 nm standard CMOS technology based on the distinct requirements of each harvester, and is terminated with a Schottky diode to avoid reverse current flow. The system topology hence supports simultaneous power generation and delivery from low and high frequency vibrations as well as temperature differences in the environment. The ultra-low DC voltage harvested from TE generator is boosted with a cross-coupled charge-pump driven by an LC oscillator with fully-integrated center-tapped differential inductors. The EM harvester output was rectified with a self-powered and low drop-out AC/DC doubler circuit. The PZT interface electronics benefits from peak-to-peak cycle of the harvested voltage through a negative voltage converter followed by synchronous power extraction and DC-to-DC conversion through internal switches, and an external inductor. The hybrid system was tested with a wearable in-house EM energy harvester placed wrist of a jogger, a commercial low volume PZT harvester, and DC supply as the TE generator output. The system generates more than 1.2 V output for load resistances higher than 50 kΩ, which corresponds to 24 μW to power wearable sensors. Simultaneous multi-mode operation achieves higher voltage and power compared to stand-alone harvesting circuits, and generates up to 110 μW of output power. This is the first hybrid harvester circuit that simultaneously extracts energy from three independent sources, and delivers a single DC output.

Space Electronic Test Engineering

NASA Technical Reports Server (NTRS)

Chambers, Rodney D.

2004-01-01

The Space Power and Propulsion Test Engineering Branch at NASA Glenn Research center has the important duty of controlling electronic test engineering services. These services include test planning and early assessment of Space projects, management and/or technical support required to safely and effectively prepare the article and facility for testing, operation of test facilities, and validation/delivery of data to customer. The Space Electronic Test Engineering Branch is assigned electronic test engineering responsibility for the GRC Space Simulation, Microgravity, Cryogenic, and Combustion Test Facilities. While working with the Space Power and Propulsion Test Engineering Branch I am working on several different assignments. My primary assignment deals with an electrical hardware unit known as Sunny Boy. Sunny Boy is a DC load Bank that is designed for solar arrays in which it is used to convert DC power form the solar arrays into AC power at 60 hertz to pump back into the electricity grid. However, there are some researchers who decided that they would like to use the Sunny Boy unit in a space simulation as a DC load bank for a space shuttle or even the International Space Station hardware. In order to do so I must create a communication link between a computer and the Sunny Boy unit so that I can preset a few of the limits (such power, set & constant voltage levels) that Sunny Boy will need to operate using the applied DC load. Apart from this assignment I am also working on a hi-tech circuit that I need to have built at a researcher s request. This is a high voltage analog to digital circuit that will be used to record data from space ion propulsion rocket booster tests. The problem that makes building this circuit so difficult is that it contains high voltage we must find a way to lower the voltage signal before the data is transferred into the computer to be read. The solution to this problem was to transport the signal using infrared light which will lower the voltage signal down low enough so that it is harmless to a computer. Along with my involvement in the Space Power and Propulsion Test Engineering Branch, I am obligated to assist all other members of the branch in their work. This will help me to strengthen and extend my knowledge of Electrical Engineering.

Circuit Design Optimization Using Genetic Algorithm with Parameterized Uniform Crossover

NASA Astrophysics Data System (ADS)

Bao, Zhiguo; Watanabe, Takahiro

Evolvable hardware (EHW) is a new research field about the use of Evolutionary Algorithms (EAs) to construct electronic systems. EHW refers in a narrow sense to use evolutionary mechanisms as the algorithmic drivers for system design, while in a general sense to the capability of the hardware system to develop and to improve itself. Genetic Algorithm (GA) is one of typical EAs. We propose optimal circuit design by using GA with parameterized uniform crossover (GApuc) and with fitness function composed of circuit complexity, power, and signal delay. Parameterized uniform crossover is much more likely to distribute its disruptive trials in an unbiased manner over larger portions of the space, then it has more exploratory power than one and two-point crossover, so we have more chances of finding better solutions. Its effectiveness is shown by experiments. From the results, we can see that the best elite fitness, the average value of fitness of the correct circuits and the number of the correct circuits of GApuc are better than that of GA with one-point crossover or two-point crossover. The best case of optimal circuits generated by GApuc is 10.18% and 6.08% better in evaluating value than that by GA with one-point crossover and two-point crossover, respectively.

Combined Effects of Radio Frequency and Electron Radiation on CMOS Inverters

DTIC Science & Technology

2011-03-01

equipment that comes from taking real- time , in-situ measurements. To overcome this, a test circuit was designed and built to allow for real- time in...situ measurement of the output voltage, current and the inverter power. This test circuit provides real– time measurement of the inverter’s...now. To the “Operator of the Dynamitron at WSU”, thank you for your time , advice, and patience with all of my “why and how” questions. LTC McClory

Biocompatible circuit-breaker chip for thermal management of biomedical microsystems

NASA Astrophysics Data System (ADS)

Luo, Yi; Dahmardeh, Masoud; Takahata, Kenichi

2015-05-01

This paper presents a thermoresponsive micro circuit breaker for biomedical applications specifically targeted at electronic intelligent implants. The circuit breaker is micromachined to have a shape-memory-alloy cantilever actuator as a normally closed temperature-sensitive switch to protect the device of interest from overheating, a critical safety feature for smart implants including those that are electrothermally driven with wireless micro heaters. The device is fabricated in a size of 1.5  ×  2.0  ×  0.46 mm3 using biocompatible materials and a chip-based titanium package, exhibiting a nominal cold-state resistance of 14 Ω. The breaker rapidly enters the full open condition when the chip temperature exceeds 63 °C, temporarily breaking the circuit of interest to lower its temperature until chip temperature drops to 51 °C, at which the breaker closes the circuit to allow current to flow through it again, physically limiting the maximum temperature of the circuit. This functionality is tested in combination with a wireless resonant heater powered by radio-frequency electromagnetic radiation, demonstrating self-regulation of heater temperature. The developed circuit-breaker chip operates in a fully passive manner that removes the need for active sensor and circuitry to achieve temperature regulation in a target device, contributing to the miniaturization of biomedical microsystems including electronic smart implants where thermal management is essential.

Reliability Assessment of GaN Power Switches

DTIC Science & Technology

2015-04-17

Possibilities for single event burnout testing were examined as well. Device simulation under the conditions of some of the testing was performed on...reverse-bias (HTRB) and single electron burnout (SEE) tests. 8. Refine test structures, circuits, and procedures, and, if possible, develop

The 5-kW arcjet power electronics

NASA Technical Reports Server (NTRS)

Gruber, R. P.; Gott, R. W.; Haag, T. W.

1989-01-01

The initial design and evaluation of a 5 kW arcjet power electronics breadboard which as been integrated with a modified 1 kW design laboratory arcjet is presented. A single stage, 5 kW full bridge, pulse width modulated (PWM), power converter was developed which was phase shift regulated. The converter used metal oxide semiconductor field effect transistor (MOSFET) power switches and incorporated current mode control and an integral arcjet pulse ignition circuit. The unoptimized power efficiency was 93.5 and 93.9 percent at 5 kW and 50A output at input voltages of 130 and 150V, respectively. Line and load current regulation at 50A output was within one percent. The converter provided up to 6.6 kW to the arcjet with simulated ammonia used as a propellant.

High bandwidth magnetically isolated signal transmission circuit

NASA Technical Reports Server (NTRS)

Repp, John Donald (Inventor)

2005-01-01

Many current electronic systems incorporate expensive or sensitive electrical components. Because electrical energy is often generated or transmitted at high voltages, the power supplies to these electronic systems must be carefully designed. Power supply design must ensure that the electrical system being supplied with power is not exposed to excessive voltages or currents. In order to isolate power supplies from electrical equipment, many methods have been employed. These methods typically involve control systems or signal transfer methods. However, these methods are not always suitable because of their drawbacks. The present invention relates to transmitting information across an interface. More specifically, the present invention provides an apparatus for transmitting both AC and DC information across a high bandwidth magnetic interface with low distortion.

IPACS Electronics: Comments on the Original Design and Current Efforts at Langley Research Center

NASA Technical Reports Server (NTRS)

Gowdey, J. C.

1983-01-01

The development of the integrated power altitude control system (IPACS) is described. The power bridge was fabricated, and all major parts are in hand. The bridge was tested with a 1/4 HP motor for another program. The PWM, Control Logic, and upper bridge driver power supply are breadboarded and are debugged prior to starting testing on a passive load. The Hall sensor circuit for detecting rotor position is in design.

A Battery Charger and State of Charge Indicator

NASA Technical Reports Server (NTRS)

Latos, T. S.

1984-01-01

A battery charger which has a full wave rectifier in series with a transformer isolated 20 kHz dc-dc converter with high frequency switches, which are programmed to actively shape the input dc line current to be a mirror image of the ac line voltage is discussed. The power circuit operates at 2 kW peak and 1 kW average power. The BC/SCI has two major subsystems: (1) the battery charger power electronics with its controls; and (2) a microcomputer subsystem which is used to acquire battery terminal data and exercise the state of charge software programs. The state of charge definition employed is the energy remaining in the battery when extracted at a 10 kW rate divided by the energy capacity of a fully charged new battery. The battery charger circuit is an isolated boost converter operating at an internal frequency of 20 kHz. The switches selected for the battery charger are the single most important item in determining its efficiency. The combination of voltage and current requirements dictate the use of high power NPN Darlington switching transistors. The power circuit topology is a three switch design which utilizes a power FET on the center tap of the isolation transformer and the power Darlingtons on each of the two ends. An analog control system is employed to accomplish active input current waveshaping as well as the necessary regulation.

Ultrahigh-rate supercapacitors based on eletrochemically reduced graphene oxide for ac line-filtering.

PubMed

Sheng, Kaixuan; Sun, Yiqing; Li, Chun; Yuan, Wenjing; Shi, Gaoquan

2012-01-01

The recent boom in multifunction portable electronic equipments requires the development of compact and miniaturized electronic circuits with high efficiencies, low costs and long lasting time. For the operation of most line-powered electronics, alternating current (ac) line-filters are used to attenuate the leftover ac ripples on direct current (dc) voltage busses. Today, aluminum electrolytic capacitors (AECs) are widely applied for this purpose. However, they are usually the largest components in electronic circuits. Replacing AECs by more compact capacitors will have an immense impact on future electronic devices. Here, we report a double-layer capacitor based on three-dimensional (3D) interpenetrating graphene electrodes fabricated by electrochemical reduction of graphene oxide (ErGO-DLC). At 120-hertz, the ErGO-DLC exhibited a phase angle of -84 degrees, a specific capacitance of 283 microfaradays per centimeter square and a resistor-capacitor (RC) time constant of 1.35 milliseconds, making it capable of replacing AECs for the application of 120-hertz filtering.

Ultrahigh-rate supercapacitors based on eletrochemically reduced graphene oxide for ac line-filtering

NASA Astrophysics Data System (ADS)

Sheng, Kaixuan; Sun, Yiqing; Li, Chun; Yuan, Wenjing; Shi, Gaoquan

2012-02-01

The recent boom in multifunction portable electronic equipments requires the development of compact and miniaturized electronic circuits with high efficiencies, low costs and long lasting time. For the operation of most line-powered electronics, alternating current (ac) line-filters are used to attenuate the leftover ac ripples on direct current (dc) voltage busses. Today, aluminum electrolytic capacitors (AECs) are widely applied for this purpose. However, they are usually the largest components in electronic circuits. Replacing AECs by more compact capacitors will have an immense impact on future electronic devices. Here, we report a double-layer capacitor based on three-dimensional (3D) interpenetrating graphene electrodes fabricated by electrochemical reduction of graphene oxide (ErGO-DLC). At 120-hertz, the ErGO-DLC exhibited a phase angle of -84 degrees, a specific capacitance of 283 microfaradays per centimeter square and a resistor-capacitor (RC) time constant of 1.35 milliseconds, making it capable of replacing AECs for the application of 120-hertz filtering.

Ultrahigh-rate supercapacitors based on eletrochemically reduced graphene oxide for ac line-filtering

PubMed Central

Sheng, Kaixuan; Sun, Yiqing; Li, Chun; Yuan, Wenjing; Shi, Gaoquan

2012-01-01

The recent boom in multifunction portable electronic equipments requires the development of compact and miniaturized electronic circuits with high efficiencies, low costs and long lasting time. For the operation of most line-powered electronics, alternating current (ac) line-filters are used to attenuate the leftover ac ripples on direct current (dc) voltage busses. Today, aluminum electrolytic capacitors (AECs) are widely applied for this purpose. However, they are usually the largest components in electronic circuits. Replacing AECs by more compact capacitors will have an immense impact on future electronic devices. Here, we report a double-layer capacitor based on three-dimensional (3D) interpenetrating graphene electrodes fabricated by electrochemical reduction of graphene oxide (ErGO-DLC). At 120-hertz, the ErGO-DLC exhibited a phase angle of −84 degrees, a specific capacitance of 283 microfaradays per centimeter square and a resistor-capacitor (RC) time constant of 1.35 milliseconds, making it capable of replacing AECs for the application of 120-hertz filtering. PMID:22355759

Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour

NASA Astrophysics Data System (ADS)

Donoval, Daniel; Vrbicky, Andrej; Marek, Juraj; Chvala, Ales; Beno, Peter

2008-06-01

High-voltage power MOSFETs have been widely used in switching mode power supply circuits as output drivers for industrial and automotive electronic control systems. However, as the device size is reduced, the energy handling capability is becoming a very important issue to be addressed together with the trade-off between the series on-resistance RON and breakdown voltage VBR. Unclamped inductive switching (UIS) condition represents the circuit switching operation for evaluating the "ruggedness", which characterizes the device capability to handle high avalanche currents during the applied stress. In this paper we present an experimental method which modifies the standard UIS test and allows extraction of the maximum device temperature after the applied standard stress pulse vanishes. Corresponding analysis and non-destructive prediction of the ruggedness of power DMOSFETs devices supported by advanced 2-D mixed mode electro-thermal device and circuit simulation under UIS conditions using calibrated physical models is provided also. The results of numerical simulation are in a very good correlation with experimental characteristics and contribute to their physical interpretation by identification of the mechanism of heat generation and heat source location and continuous temperature extraction.

Control voltage and power fluctuations when connecting wind farms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berinde, Ioan, E-mail: ioan-berinde@yahoo.com; Bălan, Horia, E-mail: hbalan@mail.utcluj.ro; Oros, Teodora Susana, E-mail: teodoraoros-87@yahoo.com

2015-12-23

Voltage, frequency, active power and reactive power are very important parameters in terms of power quality. These parameters are followed when connecting any power plant, the more the connection of wind farms. Connecting wind farms to the electricity system must not cause interference outside the limits set by regulations. Modern solutions for fast and automatic voltage control and power fluctuations using electronic control systems of reactive power flows. FACTS (Flexible Alternating Current Transmision System) systems, established on the basis of power electronic circuits ensure control of electrical status quantities to achieve the necessary transfer of power to the power grid.more » FACTS devices can quickly control parameters and sizes of state power lines, such as impedance line voltages and phase angles of the voltages of the two ends of the line. Their use can lead to improvement in power system operation by increasing the transmission capacity of power lines, power flow control lines, improved static and transient stability reserve.« less

A maximum power point tracking algorithm for photovoltaic applications

NASA Astrophysics Data System (ADS)

Nelatury, Sudarshan R.; Gray, Robert

2013-05-01

The voltage and current characteristic of a photovoltaic (PV) cell is highly nonlinear and operating a PV cell for maximum power transfer has been a challenge for a long time. Several techniques have been proposed to estimate and track the maximum power point (MPP) in order to improve the overall efficiency of a PV panel. A strategic use of the mean value theorem permits obtaining an analytical expression for a point that lies in a close neighborhood of the true MPP. But hitherto, an exact solution in closed form for the MPP is not published. This problem can be formulated analytically as a constrained optimization, which can be solved using the Lagrange method. This method results in a system of simultaneous nonlinear equations. Solving them directly is quite difficult. However, we can employ a recursive algorithm to yield a reasonably good solution. In graphical terms, suppose the voltage current characteristic and the constant power contours are plotted on the same voltage current plane, the point of tangency between the device characteristic and the constant power contours is the sought for MPP. It is subject to change with the incident irradiation and temperature and hence the algorithm that attempts to maintain the MPP should be adaptive in nature and is supposed to have fast convergence and the least misadjustment. There are two parts in its implementation. First, one needs to estimate the MPP. The second task is to have a DC-DC converter to match the given load to the MPP thus obtained. Availability of power electronics circuits made it possible to design efficient converters. In this paper although we do not show the results from a real circuit, we use MATLAB to obtain the MPP and a buck-boost converter to match the load. Under varying conditions of load resistance and irradiance we demonstrate MPP tracking in case of a commercially available solar panel MSX-60. The power electronics circuit is simulated by PSIM software.

Effects of a parallel resistor on electrical characteristics of a piezoelectric transformer in open-circuit transient state.

PubMed

Chang, Kuo-Tsai

2007-01-01

This paper investigates electrical transient characteristics of a Rosen-type piezoelectric transformer (PT), including maximum voltages, time constants, energy losses and average powers, and their improvements immediately after turning OFF. A parallel resistor connected to both input terminals of the PT is needed to improve the transient characteristics. An equivalent circuit for the PT is first given. Then, an open-circuit voltage, involving a direct current (DC) component and an alternating current (AC) component, and its related energy losses are derived from the equivalent circuit with initial conditions. Moreover, an AC power control system, including a DC-to-AC resonant inverter, a control switch and electronic instruments, is constructed to determine the electrical characteristics of the OFF transient state. Furthermore, the effects of the parallel resistor on the transient characteristics at different parallel resistances are measured. The advantages of adding the parallel resistor also are discussed. From the measured results, the DC time constant is greatly decreased from 9 to 0.04 ms by a 10 k(omega) parallel resistance under open output.

Probes for measuring noise current in an electronic cable

NASA Technical Reports Server (NTRS)

Lundy, C. C.

1974-01-01

Electromagnetic interference in deep-space network receiver is often caused by stray coupling from power lines. These stray signals create potential differences between ground terminals, which leads to excessive noise in receiver circuits. Pair of probes detect and measure noise currents in conductors.

Optimal time-domain technique for pulse width modulation in power electronics

NASA Astrophysics Data System (ADS)

Mayergoyz, I.; Tyagi, S.

2018-05-01

Optimal time-domain technique for pulse width modulation is presented. It is based on exact and explicit analytical solutions for inverter circuits, obtained for any sequence of input voltage rectangular pulses. Two optimal criteria are discussed and illustrated by numerical examples.

Electronic Switch Arrays for Managing Microbattery Arrays

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad; Alahmad, Mahmoud; Sukumar, Vinesh; Zghoul, Fadi; Buck, Kevin; Hess, Herbert; Li, Harry; Cox, David

2008-01-01

Integrated circuits have been invented for managing the charging and discharging of such advanced miniature energy-storage devices as planar arrays of microscopic energy-storage elements [typically, microscopic electrochemical cells (microbatteries) or microcapacitors]. The architecture of these circuits enables implementation of the following energy-management options: dynamic configuration of the elements of an array into a series or parallel combination of banks (subarrarys), each array comprising a series of parallel combination of elements; direct addressing of individual banks for charging/or discharging; and, disconnection of defective elements and corresponding reconfiguration of the rest of the array to utilize the remaining functional elements to obtain the desited voltage and current performance. An integrated circuit according to the invention consists partly of a planar array of field-effect transistors that function as switches for routing electric power among the energy-storage elements, the power source, and the load. To connect the energy-storage elements to the power source for charging, a specific subset of switches is closed; to connect the energy-storage elements to the load for discharging, a different specific set of switches is closed. Also included in the integrated circuit is circuitry for monitoring and controlling charging and discharging. The control and monitoring circuitry, the switching transistors, and interconnecting metal lines are laid out on the integrated-circuit chip in a pattern that registers with the array of energy-storage elements. There is a design option to either (1) fabricate the energy-storage elements in the corresponding locations on, and as an integral part of, this integrated circuit; or (2) following a flip-chip approach, fabricate the array of energy-storage elements on a separate integrated-circuit chip and then align and bond the two chips together.

Small Cold Temperature Instrument Packages

NASA Astrophysics Data System (ADS)

Clark, P. E.; Millar, P. S.; Yeh, P. S.; Feng, S.; Brigham, D.; Beaman, B.

We are developing a small cold temperature instrument package concept that integrates a cold temperature power system with ultra low temperature ultra low power electronics components and power supplies now under development into a 'cold temperature surface operational' version of a planetary surface instrument package. We are already in the process of developing a lower power lower temperature version for an instrument of mutual interest to SMD and ESMD to support the search for volatiles (the mass spectrometer VAPoR, Volatile Analysis by Pyrolysis of Regolith) both as a stand alone instrument and as part of an environmental monitoring package. We build on our previous work to develop strategies for incorporating Ultra Low Temperature/Ultra Low Power (ULT/ULP) electronics, lower voltage power supplies, as well as innovative thermal design concepts for instrument packages. Cryotesting has indicated that our small Si RHBD CMOS chips can deliver >80% of room temperature performance at 40K (nominal minimum lunar surface temperature). We leverage collaborations, past and current, with the JPL battery development program to increase power system efficiency in extreme environments. We harness advances in MOSFET technology that provide lower voltage thresholds for power switching circuits incorporated into our low voltage power supply concept. Conventional power conversion has a lower efficiency. Our low power circuit concept based on 'synchronous rectification' could produce stable voltages as low as 0.6 V with 85% efficiency. Our distributed micro-battery-based power supply concept incorporates cold temperature power supplies operating with a 4 V or 8 V battery. This work will allow us to provide guidelines for applying the low temperature, low power system approaches generically to the widest range of surface instruments.

Electronics for Piezoelectric Smart Structures

NASA Technical Reports Server (NTRS)

Warkentin, D. J.; Tani, J.

1997-01-01

This paper briefly presents work addressing some of the basic considerations for the electronic components used in smart structures incorporating piezoelectric elements. After general remarks on the application of piezoelectric elements to the problem of structural vibration control, three main topics are described. Work to date on the development of techniques for embedding electronic components within structural parts is presented, followed by a description of the power flow and dissipation requirements of those components. Finally current work on the development of electronic circuits for use in an 'active wall' for acoustic noise is introduced.

Effect of Sensors on the Reliability and Control Performance of Power Circuits in the Web of Things (WoT)

PubMed Central

Bae, Sungwoo; Kim, Myungchin

2016-01-01

In order to realize a true WoT environment, a reliable power circuit is required to ensure interconnections among a range of WoT devices. This paper presents research on sensors and their effects on the reliability and response characteristics of power circuits in WoT devices. The presented research can be used in various power circuit applications, such as energy harvesting interfaces, photovoltaic systems, and battery management systems for the WoT devices. As power circuits rely on the feedback from voltage/current sensors, the system performance is likely to be affected by the sensor failure rates, sensor dynamic characteristics, and their interface circuits. This study investigated how the operational availability of the power circuits is affected by the sensor failure rates by performing a quantitative reliability analysis. In the analysis process, this paper also includes the effects of various reconstruction and estimation techniques used in power processing circuits (e.g., energy harvesting circuits and photovoltaic systems). This paper also reports how the transient control performance of power circuits is affected by sensor interface circuits. With the frequency domain stability analysis and circuit simulation, it was verified that the interface circuit dynamics may affect the transient response characteristics of power circuits. The verification results in this paper showed that the reliability and control performance of the power circuits can be affected by the sensor types, fault tolerant approaches against sensor failures, and the response characteristics of the sensor interfaces. The analysis results were also verified by experiments using a power circuit prototype. PMID:27608020

30 CFR 57.12017 - Work on power circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... shall prevent the power circuits from being energized without the knowledge of the individuals working... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on power circuits. 57.12017 Section 57... Surface and Underground § 57.12017 Work on power circuits. Power circuits shall be deenergized before work...

Long life testing of spare Mariner Venus '67 hardware. [power conditioning electronics

NASA Technical Reports Server (NTRS)

Silverman, S. W.

1976-01-01

The faultless performance of the Mariner Venus '67 Power Conditioning Electronics (PCE) throughout six years of continuous operation in a simulated space environment is reported. Weekly functional tests supplemented by daily monitoring verified that the PCE equipment can perform to its intended functions for at least six years without apparent performance degradation. Performance throughout the test period was very stable, there are no circuit or redundancy improvements to be considered. When the equipment was examined after the test was completed, there was no evidence of any physical damage nor any difficulty in disconnecting the wiring connectors.

Materials for bioresorbable radio frequency electronics.

PubMed

Hwang, Suk-Won; Huang, Xian; Seo, Jung-Hun; Song, Jun-Kyul; Kim, Stanley; Hage-Ali, Sami; Chung, Hyun-Joong; Tao, Hu; Omenetto, Fiorenzo G; Ma, Zhenqiang; Rogers, John A

2013-07-12

Materials, device designs and manufacturing approaches are presented for classes of RF electronic components that are capable of complete dissolution in water or biofluids. All individual passive/active components as well as system-level examples such as wireless RF energy harvesting circuits exploit active materials that are biocompatible. The results provide diverse building blocks for physically transient forms of electronics, of particular potential value in bioresorbable medical implants with wireless power transmission and communication capabilities. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

VHSIC Electronics and the Cost of Air Force Avionics in the 1990s

DTIC Science & Technology

1990-11-01

circuit. LRM Line replaceable module. LRU Line replaceable unit. LSI Large-scale integration. LSTTL Tow-power Schottky Transitor -to-Transistor Logic...displays, communications/navigation/identification, electronic combat equipment, dispensers, and computers. These CERs, which statistically relate the...some of the reliability numbers, and adding the F-15 and F-16 to obtain the data sample shown in Table 6. Both suite costs and reliability statistics

Status of the use of microwave power transmission technology in the solar power satellite

NASA Technical Reports Server (NTRS)

Brown, W. C.

1985-01-01

Attention is given to recent advances in the technologies needed to build and transport a Solar Power satellite. Among the areas of NASA sponsored SPS research are: the application of ground-based, electronically steerable arrays to the SPS space-based microwave transmitting antenna; and the application of microwave transmission technology to a low-cost LEO-to-GEO transportation system to build the SPS. A photograph of a thin-film etched circuit rectenna for powering the LEO-to-GEO transportation system is provided.

Results on 3D interconnection from AIDA WP3

NASA Astrophysics Data System (ADS)

Moser, Hans-Günther; AIDA-WP3

2016-09-01

From 2010 to 2014 the EU funded AIDA project established in one of its work packages (WP3) a network of groups working collaboratively on advanced 3D integration of electronic circuits and semiconductor sensors for applications in particle physics. The main motivation came from the severe requirements on pixel detectors for tracking and vertexing at future Particle Physics experiments at LHC, super-B factories and linear colliders. To go beyond the state-of-the-art, the main issues were studying low mass, high bandwidth applications, with radiation hardness capabilities, with low power consumption, offering complex functionality, with small pixel size and without dead regions. The interfaces and interconnects of sensors to electronic readout integrated circuits are a key challenge for new detector applications.

VLSI implementation of a bio-inspired olfactory spiking neural network.

PubMed

Hsieh, Hung-Yi; Tang, Kea-Tiong

2012-07-01

This paper presents a low-power, neuromorphic spiking neural network (SNN) chip that can be integrated in an electronic nose system to classify odor. The proposed SNN takes advantage of sub-threshold oscillation and onset-latency representation to reduce power consumption and chip area, providing a more distinct output for each odor input. The synaptic weights between the mitral and cortical cells are modified according to an spike-timing-dependent plasticity learning rule. During the experiment, the odor data are sampled by a commercial electronic nose (Cyranose 320) and are normalized before training and testing to ensure that the classification result is only caused by learning. Measurement results show that the circuit only consumed an average power of approximately 3.6 μW with a 1-V power supply to discriminate odor data. The SNN has either a high or low output response for a given input odor, making it easy to determine whether the circuit has made the correct decision. The measurement result of the SNN chip and some well-known algorithms (support vector machine and the K-nearest neighbor program) is compared to demonstrate the classification performance of the proposed SNN chip.The mean testing accuracy is 87.59% for the data used in this paper.

More Efficient Power Conversion for EVs: Gallium-Nitride Advanced Power Semiconductor and Packaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-02-01

Broad Funding Opportunity Announcement Project: Delphi is developing power converters that are smaller and more energy efficient, reliable, and cost-effective than current power converters. Power converters rely on power transistors which act like a very precisely controlled on-off switch, controlling the electrical energy flowing through an electrical circuit. Most power transistors today use silicon (Si) semiconductors. However, Delphi is using semiconductors made with a thin layer of gallium-nitride (GaN) applied on top of the more conventional Si material. The GaN layer increases the energy efficiency of the power transistor and also enables the transistor to operate at much higher temperatures,more » voltages, and power-density levels compared to its Si counterpart. Delphi is packaging these high-performance GaN semiconductors with advanced electrical connections and a cooling system that extracts waste heat from both sides of the device to further increase the device’s efficiency and allow more electrical current to flow through it. When combined with other electronic components on a circuit board, Delphi’s GaN power transistor package will help improve the overall performance and cost-effectiveness of HEVs and EVs.« less

Aviation Maintenance Technology. General. G105 Aviation Electricity and Electronics. Instructor Material.

ERIC Educational Resources Information Center

Oklahoma State Board of Vocational and Technical Education, Stillwater. Curriculum and Instructional Materials Center.

These instructor materials for an aviation maintenance technology course contain five instructional modules. The modules cover the following topics: determining the relationship of voltage, current, resistance, and power in electrical circuits; computing and measuring capacitance and inductance; measuring voltage, current, resistance, and…

A Wide Range Temperature Sensor Using SOI Technology

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Elbuluk, Malik E.; Hammoud, Ahmad

2009-01-01

Silicon-on-insulator (SOI) technology is becoming widely used in integrated circuit chips for its advantages over the conventional silicon counterpart. The decrease in leakage current combined with lower power consumption allows electronics to operate in a broader temperature range. This paper describes the performance of an SOIbased temperature sensor under extreme temperatures and thermal cycling. The sensor comprised of a temperature-to-frequency relaxation oscillator circuit utilizing an SOI precision timer chip. The circuit was evaluated under extreme temperature exposure and thermal cycling between -190 C and +210 C. The results indicate that the sensor performed well over the entire test temperature range and it was able to re-start at extreme temperatures.

Plasma physics and related challenges of millimeter-wave-to-terahertz and high power microwave generationa)

NASA Astrophysics Data System (ADS)

Booske, John H.

2008-05-01

Homeland security and military defense technology considerations have stimulated intense interest in mobile, high power sources of millimeter-wave (mmw) to terahertz (THz) regime electromagnetic radiation, from 0.1 to 10THz. While vacuum electronic sources are a natural choice for high power, the challenges have yet to be completely met for applications including noninvasive sensing of concealed weapons and dangerous agents, high-data-rate communications, high resolution radar, next generation acceleration drivers, and analysis of fluids and condensed matter. The compact size requirements for many of these high frequency sources require miniscule, microfabricated slow wave circuits. This necessitates electron beams with tiny transverse dimensions and potentially very high current densities for adequate gain. Thus, an emerging family of microfabricated, vacuum electronic devices share many of the same plasma physics challenges that are currently confronting "classic" high power microwave (HPM) generators including long-life bright electron beam sources, intense beam transport, parasitic mode excitation, energetic electron interaction with surfaces, and rf air breakdown at output windows. The contemporary plasma physics and other related issues of compact, high power mmw-to-THz sources are compared and contrasted to those of HPM generation, and future research challenges and opportunities are discussed.

Pulse width modulation inverter with battery charger

DOEpatents

Slicker, James M.

1985-01-01

An inverter is connected between a source of DC power and a three-phase AC induction motor, and a microprocessor-based circuit controls the inverter using pulse width modulation techniques. In the disclosed method of pulse width modulation, both edges of each pulse of a carrier pulse train are equally modulated by a time proportional to sin .theta., where .theta. is the angular displacement of the pulse center at the motor stator frequency from a fixed reference point on the carrier waveform. The carrier waveform frequency is a multiple of the motor stator frequency. The modulated pulse train is then applied to each of the motor phase inputs with respective phase shifts of 120.degree. at the stator frequency. Switching control commands for electronic switches in the inverter are stored in a random access memory (RAM) and the locations of the RAM are successively read out in a cyclic manner, each bit of a given RAM location controlling a respective phase input of the motor. The DC power source preferably comprises rechargeable batteries and all but one of the electronic switches in the inverter can be disabled, the remaining electronic switch being part of a "flyback" DC-DC converter circuit for recharging the battery.

A CMOS application-specified-integrated-circuit for 40 GHz high-electron-mobility-transistors automatic biasing

NASA Astrophysics Data System (ADS)

De Matteis, M.; De Blasi, M.; Vallicelli, E. A.; Zannoni, M.; Gervasi, M.; Bau, A.; Passerini, A.; Baschirotto, A.

2017-02-01

This paper presents the design and the experimental results of a CMOS Automatic Control System (ACS) for the biasing of High-Electron-Mobility-Transistors (HEMT). The ACS is the first low-power mixed-signal Application-Specified-Integrated-Circuit (ASIC) able to automatically set and regulate the operating point of an off-chip 6 HEMT Low-Noise-Amplifiers (LNAs), hence it composes a two-chip system (the ACS+LNAs) to be used in the Large Scale Polarization Explorer (LSPE) stratospheric balloon for Cosmic Microwave Background (CMB) signal observation. The hereby presented ACS ASIC provides a reliable instrumentation for gradual and very stable LNAs characterization, switching-on, and operating point (<4 mV accuracy). Moreover, it simplifies the electronic instrumentation needed for biasing the LNAs, since it replaces several off-the-shelf and digital programmable device components. The ASIC prototype has been implemented in a CMOS 0.35 μ m technology (12 mm2 area occupancy). It operates at 4 kHz clock frequency. The power consumption of one-channel ASIC (biasing one LNA) is 3.6 mW, whereas 30 mW are consumed by a single LNA device.

A CMOS application-specified-integrated-circuit for 40 GHz high-electron-mobility-transistors automatic biasing.

PubMed

De Matteis, M; De Blasi, M; Vallicelli, E A; Zannoni, M; Gervasi, M; Bau, A; Passerini, A; Baschirotto, A

2017-02-01

This paper presents the design and the experimental results of a CMOS Automatic Control System (ACS) for the biasing of High-Electron-Mobility-Transistors (HEMT). The ACS is the first low-power mixed-signal Application-Specified-Integrated-Circuit (ASIC) able to automatically set and regulate the operating point of an off-chip 6 HEMT Low-Noise-Amplifiers (LNAs), hence it composes a two-chip system (the ACS+LNAs) to be used in the Large Scale Polarization Explorer (LSPE) stratospheric balloon for Cosmic Microwave Background (CMB) signal observation. The hereby presented ACS ASIC provides a reliable instrumentation for gradual and very stable LNAs characterization, switching-on, and operating point (<4 mV accuracy). Moreover, it simplifies the electronic instrumentation needed for biasing the LNAs, since it replaces several off-the-shelf and digital programmable device components. The ASIC prototype has been implemented in a CMOS 0.35 μm technology (12 mm 2 area occupancy). It operates at 4 kHz clock frequency. The power consumption of one-channel ASIC (biasing one LNA) is 3.6 mW, whereas 30 mW are consumed by a single LNA device.

Pulse width modulation inverter with battery charger

NASA Technical Reports Server (NTRS)

Slicker, James M. (Inventor)

1985-01-01

An inverter is connected between a source of DC power and a three-phase AC induction motor, and a microprocessor-based circuit controls the inverter using pulse width modulation techniques. In the disclosed method of pulse width modulation, both edges of each pulse of a carrier pulse train are equally modulated by a time proportional to sin .theta., where .theta. is the angular displacement of the pulse center at the motor stator frequency from a fixed reference point on the carrier waveform. The carrier waveform frequency is a multiple of the motor stator frequency. The modulated pulse train is then applied to each of the motor phase inputs with respective phase shifts of 120.degree. at the stator frequency. Switching control commands for electronic switches in the inverter are stored in a random access memory (RAM) and the locations of the RAM are successively read out in a cyclic manner, each bit of a given RAM location controlling a respective phase input of the motor. The DC power source preferably comprises rechargeable batteries and all but one of the electronic switches in the inverter can be disabled, the remaining electronic switch being part of a flyback DC-DC converter circuit for recharging the battery.

Radiation damage and annealing in large area n+/p/p+ GaAs shallow homojunction solar cells

NASA Technical Reports Server (NTRS)

Flood, D. J.; Brinker, D. J.; Swartz, C. K.; Hart, R. E., Jr.; Fan, J. C. C.

1982-01-01

Annealing of radiation damage was observed for the first time in VPE-grown, 2- by 2-cm, n+/p/p+ GaAs shallow homojunction solar cells. Electrical performance of several cells was determined as a function of 1-MeV electron fluence in the range of 10 to the 13th power to 10 to the 15th power e-/sq cm and as a function of thermal annealing time at various temperatures. Degradation of normalized power output after a fluence of 10 to the 15th power 1-MeV electrons/sq cm ranged from a low of 24 to 31 percent of initial maximum power. Normalized short circuit current degradation was limited to the range from 10 to 19 percent of preirradiated values. Thermal annealing was carried out in a flowing nitrogen gas ambient, with annealing temperatures spanning the range from 125 to 200 C. Substantial recovery of short circuit current was observed at temperatures as low as 175 C. In one case improvement by as much as 10 percent of the postirradiated value was observed. The key features of these cells are their extremely thin emitter layers (approxmately 0.05 micrometers), the absence of any Al sub xGd sub 1-x As passivating window layer, and their fabrication by vapor phase epitaxy.

Chemoelectronic circuits based on metal nanoparticles

NASA Astrophysics Data System (ADS)

Yan, Yong; Warren, Scott C.; Fuller, Patrick; Grzybowski, Bartosz A.

2016-07-01

To develop electronic devices with novel functionalities and applications, various non-silicon-based materials are currently being explored. Nanoparticles have unique characteristics due to their small size, which can impart functions that are distinct from those of their bulk counterparts. The use of semiconductor nanoparticles has already led to improvements in the efficiency of solar cells, the processability of transistors and the sensitivity of photodetectors, and the optical and catalytic properties of metal nanoparticles have led to similar advances in plasmonics and energy conversion. However, metals screen electric fields and this has, so far, prevented their use in the design of all-metal nanoparticle circuitry. Here, we show that simple electronic circuits can be made exclusively from metal nanoparticles functionalized with charged organic ligands. In these materials, electronic currents are controlled by the ionic gradients of mobile counterions surrounding the ‘jammed’ nanoparticles. The nanoparticle-based electronic elements of the circuitry can be interfaced with metal nanoparticles capable of sensing various environmental changes (humidity, gas, the presence of various cations), creating electronic devices in which metal nanoparticles sense, process and ultimately report chemical signals. Because the constituent nanoparticles combine electronic and chemical sensing functions, we term these systems ‘chemoelectronic’. The circuits have switching times comparable to those of polymer electronics, selectively transduce parts-per-trillion chemical changes into electrical signals, perform logic operations, consume little power (on the scale of microwatts), and are mechanically flexible. They are also ‘green’, in the sense that they comprise non-toxic nanoparticles cast at room temperature from alcohol solutions.

Chemoelectronic circuits based on metal nanoparticles.

PubMed

Yan, Yong; Warren, Scott C; Fuller, Patrick; Grzybowski, Bartosz A

2016-07-01

To develop electronic devices with novel functionalities and applications, various non-silicon-based materials are currently being explored. Nanoparticles have unique characteristics due to their small size, which can impart functions that are distinct from those of their bulk counterparts. The use of semiconductor nanoparticles has already led to improvements in the efficiency of solar cells, the processability of transistors and the sensitivity of photodetectors, and the optical and catalytic properties of metal nanoparticles have led to similar advances in plasmonics and energy conversion. However, metals screen electric fields and this has, so far, prevented their use in the design of all-metal nanoparticle circuitry. Here, we show that simple electronic circuits can be made exclusively from metal nanoparticles functionalized with charged organic ligands. In these materials, electronic currents are controlled by the ionic gradients of mobile counterions surrounding the 'jammed' nanoparticles. The nanoparticle-based electronic elements of the circuitry can be interfaced with metal nanoparticles capable of sensing various environmental changes (humidity, gas, the presence of various cations), creating electronic devices in which metal nanoparticles sense, process and ultimately report chemical signals. Because the constituent nanoparticles combine electronic and chemical sensing functions, we term these systems 'chemoelectronic'. The circuits have switching times comparable to those of polymer electronics, selectively transduce parts-per-trillion chemical changes into electrical signals, perform logic operations, consume little power (on the scale of microwatts), and are mechanically flexible. They are also 'green', in the sense that they comprise non-toxic nanoparticles cast at room temperature from alcohol solutions.

A 15 MHz bandwidth, 60 V{sub pp}, low distortion power amplifier for driving high power piezoelectric transducers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Capineri, Lorenzo, E-mail: lorenzo.capineri@unifi.it

2014-10-01

This paper presents the design and the realization of a linear power amplifier with large bandwidth (15 MHz) capable of driving low impedance ultrasonic transducers. The output current driving capability (up to 5 A) and low distortion makes it suitable for new research applications using high power ultrasound in the medical and industrial fields. The electronic design approach is modular so that the characteristics can be scaled according to specific applications and implementation details for the circuit layout are reported. Finally the characterization of the power amplifier module is presented.

MPPT Algorithm Development for Laser Powered Surveillance Camera Power Supply Unit

NASA Astrophysics Data System (ADS)

Zhang, Yungui; Dushantha Chaminda, P. R.; Zhao, Kun; Cheng, Lin; Jiang, Yi; Peng, Kai

2018-03-01

Photovoltaics (PV) cells, modules which are semiconducting materials, convert light energy into electricity. Operation of a PV cell requires 3 basic features. When the light is absorbed it generate pairs of electron holes or excitons. An external circuit carrier opposite types of electrons irrespective of the source (sunlight or LASER light). The PV arrays have photovoltaic effect and the PV cells are defined as a device which has electrical characteristics: such as current, voltage and resistance. It varies when exposed to light, that the power output is depend on direct Laser-light. In this paper Laser-light to electricity by direct conversion with the use of PV cells and its concept of Band gap Energy, Series Resistance, Conversion Efficiency and Maximum Power Point Tracking (MPPT) methods [1].

High Power Broadband Millimeter Wave TWTs

NASA Astrophysics Data System (ADS)

James, Bill G.

1998-04-01

In the early 1980's the requirement for high power broadband millimeter wave sources encouraged the development of microwave vacuum device amplifiers for radar and communication systems. Many government funded programs were implemented for the development of high power broadband millimeter wave amplifiers that would meet the needs of the high power community. The tube design capable of meeting these goals was the slow wave coupled cavity traveling wave device, which had a proven technology base at the lower frequencies (X Band). However scaling this technology to the millimeter frequencies had severe shortcomings in both thermal and manufacturing design. These shortcomings were overcome with the development of the Ladder Circuit technology. In conjunction with the circuit development high power electron beam systems had to be developed for the generation of high rf powers. These beam systems had to be capable of many megawatts of beam power density and high current densities. The cathode technology required to be capable of operating at current densities of 10 amperes per square centimeter at long pulse lengths and high duty cycle. Since the introduction of the Ladder Circuit technology a number of high power broadband millimeter wave amplifiers have been developed and deployed in operating radar and communication systems. Broadband millimeter wave sources have been manufactured in the frequency range from 27 GHz to 100 GHz with power levels ranging from 100 watts CW to 10 kilowatts Peak at W band over a 2 GHz bandwidth. Also a 50 kW peak power and 10 kW average power device at Ka band with 2 GHz bandwidth has been developed. Today the power levels achieved by these devices are nearing the limits of this technology; therefore to gain a significant increase in power at the millimeter wave frequencies, other technologies will have to be considered, particularly fast wave devices. This paper will briefly review the ladder circuit technology and present the designs of a number of broadband high power devices developed at Ka and W band. The discussion will include the beam systems employed in these devices which are the highest power density linear beams generated to date. In conclusion the limits of the power generating capability of this technology will be presented.

Preliminary design development of 100 KW rotary power transfer device

NASA Technical Reports Server (NTRS)

Weinberger, S. M.

1981-01-01

Contactless power transfer devices for transferring electrical power across a rotating spacecraft interface were studied. A power level of 100 KW was of primary interest and the study was limited to alternating current devices. Rotary transformers and rotary capacitors together with the required dc to ac power conditioning electronics were examined. Microwave devices were addressed. The rotary transformer with resonant circuit power conditioning was selected as the most feasible approach. The rotary capacitor would be larger while microwave devices would be less efficient. A design analysis was made of a 100 KW, 20 kHz power transfer device consisting of a rotary transformer, power conditioning electronics, drive mechanism and heat rejection system. The size, weight and efficiency of the device were determined. The characteristics of a baseline slip ring were presented. Aspects of testing the 100 KW power transfer device were examined. The power transfer device is a feasible concept which can be implemented using presently available technologies.

Advanced Data Acquisition Systems

NASA Technical Reports Server (NTRS)

Perotti, J.

2003-01-01

Current and future requirements of the aerospace sensors and transducers field make it necessary for the design and development of new data acquisition devices and instrumentation systems. New designs are sought to incorporate self-health, self-calibrating, self-repair capabilities, allowing greater measurement reliability and extended calibration cycles. With the addition of power management schemes, state-of-the-art data acquisition systems allow data to be processed and presented to the users with increased efficiency and accuracy. The design architecture presented in this paper displays an innovative approach to data acquisition systems. The design incorporates: electronic health self-check, device/system self-calibration, electronics and function self-repair, failure detection and prediction, and power management (reduced power consumption). These requirements are driven by the aerospace industry need to reduce operations and maintenance costs, to accelerate processing time and to provide reliable hardware with minimum costs. The project's design architecture incorporates some commercially available components identified during the market research investigation like: Field Programmable Gate Arrays (FPGA) Programmable Analog Integrated Circuits (PAC IC) and Field Programmable Analog Arrays (FPAA); Digital Signal Processing (DSP) electronic/system control and investigation of specific characteristics found in technologies like: Electronic Component Mean Time Between Failure (MTBF); and Radiation Hardened Component Availability. There are three main sections discussed in the design architecture presented in this document. They are the following: (a) Analog Signal Module Section, (b) Digital Signal/Control Module Section and (c) Power Management Module Section. These sections are discussed in detail in the following pages. This approach to data acquisition systems has resulted in the assignment of patent rights to Kennedy Space Center under U.S. patent # 6,462,684. Furthermore, NASA KSC commercialization office has issued licensing rights to Circuit Avenue Netrepreneurs, LLC , a minority-owned business founded in 1999 located in Camden, NJ.

30 CFR 57.12053 - Circuits powered from trolley wires.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Circuits powered from trolley wires. 57.12053... Electricity Surface and Underground § 57.12053 Circuits powered from trolley wires. Ground wires for lighting circuits powered from trolley wires shall be connected securely to the ground return circuit. Surface Only ...

30 CFR 57.12053 - Circuits powered from trolley wires.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Circuits powered from trolley wires. 57.12053... Electricity Surface and Underground § 57.12053 Circuits powered from trolley wires. Ground wires for lighting circuits powered from trolley wires shall be connected securely to the ground return circuit. Surface Only ...

An introduction to the BANNING design automation system for shuttle microelectronic hardware development

NASA Technical Reports Server (NTRS)

Mcgrady, W. J.

1979-01-01

The BANNING MOS design system is presented. It complements rather than supplant the normal design activities associated with the design and fabrication of low-power digital electronic equipment. BANNING is user-oriented and requires no programming experience to use effectively. It provides the user a simulation capability to aid in his circuit design and it eliminates most of the manual operations involved in the layout and artwork generation of integrated circuits. An example of its operation is given and some additional background reading is provided.

PHEMT as a circuit element for high impedance nanopower amplifiers for ultra-low temperatures application

NASA Astrophysics Data System (ADS)

Korolev, A. M.; Shulga, V. M.; Gritsenko, I. A.; Sheshin, G. A.

2015-04-01

In this work, high electron mobility transistor (HEMT) was studied as a circuit element for amplifiers operating at temperatures of the order of 10-100 mK. To characterize the HEMT, the relative parameters are proposed to be used. HEMT characteristics were measured at a temperature of 50 mK for the first time. It follows from the reported studies that the power consumption of high-impedance HEMT-based amplifiers can be reduced down to hundreds of nanowatt or even lower.

Organic–Inorganic Eu3+/Tb3+ codoped hybrid films for temperature mapping in integrated circuits

PubMed Central

Brites, Carlos D. S.; Lima, Patrícia P.; Silva, Nuno J. O.; Millán, Angel; Amaral, Vitor S.; Palacio, Fernando; Carlos, Luís D.

2013-01-01

The continuous decrease on the geometric size of electronic devices and integrated circuits generates higher local power densities and localized heating problems that cannot be characterized by conventional thermographic techniques. Here, a self-referencing intensity-based molecular thermometer involving a di-ureasil organic-inorganic hybrid thin film co-doped with Eu3+ and Tb3+ tris (β-diketonate) chelates is used to obtain the temperature map of a FR4 printed wiring board with spatio-temporal resolutions of 0.42 μm/4.8 ms. PMID:24790938

Fabrication Of High-Tc Superconducting Integrated Circuits

NASA Technical Reports Server (NTRS)

Bhasin, Kul B.; Warner, Joseph D.

1992-01-01

Microwave ring resonator fabricated to demonstrate process for fabrication of passive integrated circuits containing high-transition-temperature superconductors. Superconductors increase efficiencies of communication systems, particularly microwave communication systems, by reducing ohmic losses and dispersion of signals. Used to reduce sizes and masses and increase aiming accuracies and tracking speeds of millimeter-wavelength, electronically steerable antennas. High-Tc superconductors preferable for such applications because they operate at higher temperatures than low-Tc superconductors do, therefore, refrigeration systems needed to maintain superconductivity designed smaller and lighter and to consume less power.

High-efficiency S-band harmonic tuning GaN amplifier

NASA Astrophysics Data System (ADS)

Cao, Meng-Yi; Zhang, Kai; Chen, Yong-He; Zhang, Jin-Cheng; Ma, Xiao-Hua; Hao, Yue

2014-03-01

In this paper, we present a high-efficiency S-band gallium nitride (GaN) power amplifier (PA). This amplifier is fabricated based on a self-developed GaN high-electron-mobility transistor (HEMT) with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2nd harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm (~70 W) with a power-added efficiency (PAE) of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz (20% relative bandwidth), the amplifier provides an output power higher than 48 dBm (~ 65 W), with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave (CW) operating conditions, the amplifier gives an output power over 46 dBm (40 W) with PAE beyond 60% over the whole operation frequency range.

Overview of space power electronic's technology under the CSTI High Capacity Power Program

NASA Technical Reports Server (NTRS)

Schwarze, Gene E.

1994-01-01

The Civilian Space Technology Initiative (CSTI) is a NASA Program targeted at the development of specific technologies in the areas of transportation, operations and science. Each of these three areas consists of major elements and one of the operation's elements is the High Capacity Power element. The goal of this element is to develop the technology base needed to meet the long duration, high capacity power requirements for future NASA initiatives. The High Capacity Power element is broken down into several subelements that includes energy conversion in the areas of the free piston Stirling power converter and thermoelectrics, thermal management, power management, system diagnostics, and environmental compatibility and system's lifetime. A recent overview of the CSTI High capacity Power element and a description of each of the program's subelements is given by Winter (1989). The goals of the Power Management subelement are twofold. The first is to develop, test, and demonstrate high temperature, radiation-resistant power and control components and circuits that will be needed in the Power Conditioning, Control and Transmission (PCCT) subsystem of a space nuclear power system. The results obtained under this goal will also be applicable to the instrumentation and control subsystem of a space nuclear reactor. These components and circuits must perform reliably for lifetimes of 7-10 years. The second goal is to develop analytical models for use in computer simulations of candidate PCCT subsystems. Circuits which will be required for a specific PCCT subsystem will be designed and built to demonstrate their performance and, also, to validate the analytical models and simulations. The tasks under the Power Management subelement will now be described in terms of objectives, approach and present status of work.

Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Latorre-Rey, Alvaro D.; Sabatti, Flavio F. M.; Albrecht, John D.; Saraniti, Marco

2017-07-01

In order to assess the underlying physical mechanisms of hot carrier-related degradation such as defect generation in millimeter-wave GaN power amplifiers, we have simulated the electron energy distribution function under large-signal radio frequency conditions in AlGaN/GaN high-electron-mobility transistors. Our results are obtained through a full band Monte Carlo particle-based simulator self-consistently coupled to a harmonic balance circuit solver. At lower frequency, simulations of a Class AB power amplifier at 10 GHz show that the peak hot electron generation is up to 43% lower under RF drive than it is under DC conditions, regardless of the input power or temperature of operation. However, at millimeter-wave operation up to 40 GHz, RF hot carrier generation reaches that from DC biasing and even exceeds it up to 75% as the amplifier is driven into compression. Increasing the temperature of operation also shows that degradation of DC and RF characteristics are tightly correlated and mainly caused by increased phonon scattering. The accurate determination of the electron energy mapping is demonstrated to be a powerful tool for the extraction of compact models used in lifetime and reliability analysis.

Power system with an integrated lubrication circuit

DOEpatents

Hoff, Brian D [East Peoria, IL; Akasam, Sivaprasad [Peoria, IL; Algrain, Marcelo C [Peoria, IL; Johnson, Kris W [Washington, IL; Lane, William H [Chillicothe, IL

2009-11-10

A power system includes an engine having a first lubrication circuit and at least one auxiliary power unit having a second lubrication circuit. The first lubrication circuit is in fluid communication with the second lubrication circuit.

80-GHz MMIC HEMT Voltage-Controlled Oscillator

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Radisic, Vesna; Micovic, Miro; Hu, Ming; Janke, Paul; Ngo, Catherine; Nguyen, Loi

2003-01-01

A voltage-controlled oscillator (VCO) that operates in the frequency range from 77.5 to 83.5 GHz has been constructed in the form of a monolithic microwave integrated circuit (MMIC) that includes high-electron-mobility transistors (HEMTs). This circuit is a prototype of electronically tunable signal sources in the 75-to-110-GHz range, needed for communication, imaging, and automotive radar applications, among others. This oscillator (see Figure 1) includes two AlInAs/GaInAs/InP HEMTs. One HEMT serves mainly as an oscillator gain element. The other HEMT serves mainly as a varactor for controlling the frequency: the frequency-control element is its gate-to-source capacitance, which is varied by changing its gate supply voltage. The gain HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle). Grounded coplanar waveguides are used as impedance-matching transmission lines, the input and output matching being chosen to sustain oscillation and maximize output power. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. A high density of vias is necessary for suppressing a parallel-plate electromagnetic mode that is undesired because it can propagate energy into the MMIC substrate. Previous attempts at constructing HEMT-based oscillators yielded circuits with relatively low levels of output power and narrow tuning ranges. For example, one HEMT VCO reported in the literature had an output power of 7 dBm (.5 mW) and a tuning range 2-GHz wide centered approximately at a nominal frequency of 77 GHz. In contrast, as shown in Figure 2, the present MMIC HEMT VCO puts out a power of 12.5 dBm (.18 mW) or more over the 6-GHz-wide frequency range from 77.5 to 83.5 GHz

An Electronic System for Ultra-low Power Hearing Implants

DTIC Science & Technology

2013-02-15

analyzers [1], [2], useful in several hearing systems. 4) We have designed and built a lithium - ion battery -recharging circuit that exploits a novel analog...control strategy with a tanh-like transconductance amplifier to automatically cause the charging in of a lithium - ion battery to transition from

Multipurpose silicon photonics signal processor core.

PubMed

Pérez, Daniel; Gasulla, Ivana; Crudgington, Lee; Thomson, David J; Khokhar, Ali Z; Li, Ke; Cao, Wei; Mashanovich, Goran Z; Capmany, José

2017-09-21

Integrated photonics changes the scaling laws of information and communication systems offering architectural choices that combine photonics with electronics to optimize performance, power, footprint, and cost. Application-specific photonic integrated circuits, where particular circuits/chips are designed to optimally perform particular functionalities, require a considerable number of design and fabrication iterations leading to long development times. A different approach inspired by electronic Field Programmable Gate Arrays is the programmable photonic processor, where a common hardware implemented by a two-dimensional photonic waveguide mesh realizes different functionalities through programming. Here, we report the demonstration of such reconfigurable waveguide mesh in silicon. We demonstrate over 20 different functionalities with a simple seven hexagonal cell structure, which can be applied to different fields including communications, chemical and biomedical sensing, signal processing, multiprocessor networks, and quantum information systems. Our work is an important step toward this paradigm.Integrated optical circuits today are typically designed for a few special functionalities and require complex design and development procedures. Here, the authors demonstrate a reconfigurable but simple silicon waveguide mesh with different functionalities.

Portable Cytometry Using Microscale Electronic Sensing

PubMed Central

Emaminejad, Sam; Paik, Kee-Hyun; Tabard-Cossa, Vincent; Javanmard, Mehdi

2015-01-01

In this manuscript, we present three different micro-impedance sensing architectures for electronic counting of cells and beads. The first method of sensing is based on using an open circuit sensing electrode integrated in a micro-pore, which measures the shift in potential as a micron-sized particle passes through. Our micro-pore, based on a funnel shaped microchannel, was fabricated in PDMS and was bound covalently to a glass substrate patterned with a gold open circuit electrode. The amplification circuitry was integrated onto a battery-powered custom printed circuit board. The second method is based on a three electrode differential measurement, which opens up the potential of using signal processing techniques to increase signal to noise ratio post measurement. The third architecture uses a contactless sensing approach, which significantly minimizes the cost of the consumable component of the impedance cytometer. We demonstrated proof of concept for the three sensing architectures by measuring the detected signal due to the passage of micron sized beads through the pore. PMID:27647950

A discrete component low-noise preamplifier readout for a linear (1×16) SiC photodiode array

NASA Astrophysics Data System (ADS)

Kahle, Duncan; Aslam, Shahid; Herrero, Federico A.; Waczynski, Augustyn

2016-09-01

A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1×16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analog signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

A Discrete Component Low-Noise Preamplifier Readout for a Linear (1x16) SiC Photodiode Array

NASA Technical Reports Server (NTRS)

Kahle, Duncan; Aslam, Shahid; Herrero, Frederico A.; Waczynski, Augustyn

2016-01-01

A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1x16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analogue signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

Battery charger and state of charge indicator. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Latos, T.S.

1984-04-15

The battery charger has a full-wave rectifier in series with a transformer isolated 20 kHz dc-dc converter with high frequency switches which are programmed to actively shape the input ac line current to be a mirror image of the ac line voltage. The power circuit is capable of operating at 2 kW peak and 1 kW average power. The BC/SCI has two major subsystems: (1) the battery charger power electronics with its controls; and (2) a microcomputer subsystem which is used to acquire battery terminal data and exercise the state-of-charge software programs. The state-of-charge definition employed is the energy remainingmore » in the battery when extracted at a 10 kW rate divided by the energy capacity of a fully charged new battery. The battery charger circuit is an isolated boost converter operating at an internal frequency of 20 kHz. The switches selected for the battery charger are the single most important item in determining its efficiency. The combination of voltage and current requirements dictated the use of high power NPN Darlington switching transistors. The power circuit topology developed is a three switch design utilizing a power FET on the center tap of the isolation transformer and the power Darlingtons on each of the two ends. An analog control system is employed to accomplish active input current waveshaping as well as the necessary regulation.« less

Behaviour of one-step spray-coated carbon nanotube supercapacitor in ambient light harvester circuit with printed organic solar cell and electrochromic display.

PubMed

Tuukkanen, Sampo; Välimäki, Marja; Lehtimäki, Suvi; Vuorinen, Tiina; Lupo, Donald

2016-03-09

A printed energy harvesting and storage circuit powered by ambient office lighting and its use to power a printed display is reported. The autonomous device is composed of three printed electronic components: an organic photovoltaic module, a carbon-nanotubes-only supercapacitor and an electrochromic display element. Components are fabricated from safe and environmentally friendly materials, and have been fabricated using solution processing methods, which translate into low-cost and high-throughput manufacturing. A supercapacitor made of spray-coated carbon nanotube based ink and aqueous NaCl electrolyte was charged using a printed organic photovoltaic module exposed to office lighting conditions. The supercapacitor charging rate, self-discharge rate and display operation were studied in detail. The supercapacitor self-discharge rate was found to depend on the charging rate. The fully charged supercapacitor was used as a power source to run the electrochromic display over 50 times.

Transmission line pulse system for avalanche characterization of high power semiconductor devices

NASA Astrophysics Data System (ADS)

Riccio, Michele; Ascione, Giovanni; De Falco, Giuseppe; Maresca, Luca; De Laurentis, Martina; Irace, Andrea; Breglio, Giovanni

2013-05-01

Because of the increasing in power density of electronic devices for medium and high power application, reliabilty of these devices is of great interest. Understanding the avalanche behaviour of a power device has become very important in these last years because it gives an indication of the maximum energy ratings which can be seen as an index of the device ruggedness. A good description of this behaviour is given by the static IV blocking characteristc. In order to avoid self heating, very relevant in high power devices, very short pulses of current have to be used, whose value can change from few milliamps up to tens of amps. The most used method to generate short pulses is the TLP (Transmission Line Pulse) test, which is based on charging the equivalent capacitance of a transmission line to high value of voltage and subsequently discharging it onto a load. This circuit let to obtain very short square pulses but it is mostly used for evaluate the ESD capability of semiconductor and, in this environment, it generates pulses of low amplitude which are not high enough to characterize the avalanche behaviour of high power devices . Advanced TLP circuit able to generate high current are usually very expensive and often suffer of distorption of the output pulse. In this article is proposed a simple, low cost circuit, based on a boosted-TLP configuration, which is capable to produce very square pulses of about one hundreds of nanosecond with amplitude up to some tens of amps. A prototype is implemented which can produce pulses up to 20A of amplitude with 200 ns of duration which can characterize power devices up to 1600V of breakdown voltage. Usage of microcontroller based logic make the circuit very flexible. Results of SPICE simulation are provided, together with experimental results. To prove the effectiveness of the circuit, the I-V blocking characteristics of two commercial devices, namely a 600V PowerMOS and a 1200V Trench-IGBT, are measured at different operating temperature.

[Performance of Electricity Generation and Feasibility of Discontinuous Power Supply of MFC by Using Pretreated Excess Sludge as Fuel].

PubMed

Zhao, Yan-hui; Zhao, Yang-guo; Guo, Liang

2016-03-15

The feasibility of treating pretreated excess sludge and capacity of supplying continuous power of microbial fuel cells (MFCs) were investigated. Two-chamber microbial fuel cells were started up and operated by using thermal pretreated excess sludge as the substrate. Potential fluctuations were achieved by changing the cathode electron acceptor. During the changes of electron acceptor, the operational stability of MFCs was assessed. The results indicated that the MFCs started successfully with oxygen as the cathode electron acceptor and reached 0.24 V after 148 hours. When the cathode electron acceptor was replaced by potassium ferricyanide, MFCs could obtain the maximum output voltage and maximum power density of 0.66 V and 4.21 W · m⁻³, respectively. When the cathode electron acceptor was changed from oxygen to potassium ferricyanide or the MFCs were closed circuit, the output power of MFCs recovered rapidly. In addition, changes of electron acceptor showed no effect on the removal of COD and ammonia nitrogen. Their removal efficiencies approached to 70% and 80%, respectively. This study concluded that MFC could treat the pretreated excess sludge and produce electricity simultaneously with a high power density. The MFC could also achieve discontinuous electricity supply during operation.

Modeling, Simulation, and Analysis of Quantum Transport.

DTIC Science & Technology

1991-03-15

mode operation is important to prevent standby power dissipation in circuits. The relevant struc- ture consists of a quantum well one half of which...is intentionally doped while the other half is left undoped. In the absence of any external electric field, electrons mostly reside in the doped half ...electron wavefunction to the undoped half in which the mobility is much higher because of the absence of in-situ impurity scatterir". Consequently the

Modular assembly of optical nanocircuits.

PubMed

Shi, Jinwei; Monticone, Francesco; Elias, Sarah; Wu, Yanwen; Ratchford, Daniel; Li, Xiaoqin; Alù, Andrea

2014-05-29

A key element enabling the microelectronic technology advances of the past decades has been the conceptualization of complex circuits with versatile functionalities as being composed of the proper combination of basic 'lumped' circuit elements (for example, inductors and capacitors). In contrast, modern nanophotonic systems are still far from a similar level of sophistication, partially because of the lack of modularization of their response in terms of basic building blocks. Here we demonstrate the design, assembly and characterization of relatively complex photonic nanocircuits by accurately positioning a number of metallic and dielectric nanoparticles acting as modular lumped elements. The nanoparticle clusters produce the desired spectral response described by simple circuit rules and are shown to be dynamically reconfigurable by modifying the direction or polarization of impinging signals. Our work represents an important step towards extending the powerful modular design tools of electronic circuits into nanophotonic systems.

Modular assembly of optical nanocircuits

NASA Astrophysics Data System (ADS)

Shi, Jinwei; Monticone, Francesco; Elias, Sarah; Wu, Yanwen; Ratchford, Daniel; Li, Xiaoqin; Alù, Andrea

2014-05-01

A key element enabling the microelectronic technology advances of the past decades has been the conceptualization of complex circuits with versatile functionalities as being composed of the proper combination of basic ‘lumped’ circuit elements (for example, inductors and capacitors). In contrast, modern nanophotonic systems are still far from a similar level of sophistication, partially because of the lack of modularization of their response in terms of basic building blocks. Here we demonstrate the design, assembly and characterization of relatively complex photonic nanocircuits by accurately positioning a number of metallic and dielectric nanoparticles acting as modular lumped elements. The nanoparticle clusters produce the desired spectral response described by simple circuit rules and are shown to be dynamically reconfigurable by modifying the direction or polarization of impinging signals. Our work represents an important step towards extending the powerful modular design tools of electronic circuits into nanophotonic systems.

Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zheyu; Dix, Jeffery; Wang, Fei Fred

This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiCmore » MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.« less

Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

DOE PAGES

Zhang, Zheyu; Dix, Jeffery; Wang, Fei Fred; ...

2017-01-19

This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiCmore » MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.« less

TOFPET 2: A high-performance circuit for PET time-of-flight

NASA Astrophysics Data System (ADS)

Di Francesco, Agostino; Bugalho, Ricardo; Oliveira, Luis; Rivetti, Angelo; Rolo, Manuel; Silva, Jose C.; Varela, Joao

2016-07-01

We present a readout and digitization ASIC featuring low-noise and low-power for time-of flight (TOF) applications using SiPMs. The circuit is designed in standard CMOS 110 nm technology, has 64 independent channels and is optimized for time-of-flight measurement in Positron Emission Tomography (TOF-PET). The input amplifier is a low impedance current conveyor based on a regulated common-gate topology. Each channel has quad-buffered analogue interpolation TDCs (time binning 20 ps) and charge integration ADCs with linear response at full scale (1500 pC). The signal amplitude can also be derived from the measurement of time-over-threshold (ToT). Simulation results show that for a single photo-electron signal with charge 200 (550) fC generated by a SiPM with (320 pF) capacitance the circuit has 24 (30) dB SNR, 75 (39) ps r.m.s. resolution, and 4 (8) mW power consumption. The event rate is 600 kHz per channel, with up to 2 MHz dark counts rejection.

High power broadband millimeter wave TWTs

NASA Astrophysics Data System (ADS)

James, Bill G.

1999-05-01

In the early 1980's the requirement for high power broadband millimeter wave sources encouraged the development of microwave vacuum device amplifiers for radar and communication systems. Many government funded programs were implemented for the development of high power broadband millimeter wave amplifiers that would meet the needs of the high power community. The tube design capable of meeting these goals was the slow wave coupled cavity traveling wave device, which had a proven technology base at the lower frequencies (X Band). However scaling this technology to the millimeter frequencies had severe shortcomings in both thermal and manufacturing design. These shortcomings were overcome with the development of the Ladder Circuit technology. In conjunction with the circuit development high power electron beam systems had to be developed for the generation of high rf powers. These beam systems had to be capable of many megawatts of beam power density and high current densities. The cathode technology required to be capable of operating at current densities of 10 amperes per square centimeter at long pulse lengths and high duty cycle. Since the introduction of the Ladder Circuit technology a number of high power broadband millimeter wave amplifiers have been developed using this technology, and have been deployed in operating radar and communication systems. Broadband millimeter wave sources have been manufactured in the frequency range from 27 GHz to 100 GHz with power levels ranging from 100 watts to 50 kilowatts. Today the power levels achieved by these devices are nearing the limits of this technology; therefore to gain a significant increase in power at the millimeter wave frequencies other technologies will have to be considered particularly fast wave devices. This paper will briefly review the ladder circuit technology and present the designs of a number of broadband high power devices developed at Ka and W band. The discussion will include the beam systems employed in these devices which are the highest power density linear beams generated to date. In conclusion the limits of the power generating capability of this technology will be presented.

Use of a Frequency Divider to Evaluate an SOI NAND Gate Device, Type CHT-7400, for Wide Temperature Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2010-01-01

Frequency dividers constitute essential elements in designing phase-locked loop circuits and microwave systems. In addition, they are used in providing required clocking signals to microprocessors and can be utilized as digital counters. In some applications, particularly space missions, electronics are often exposed to extreme temperature conditions. Therefore, it is required that circuits designed for such applications incorporate electronic parts and devices that can tolerate and operate efficiently in harsh temperature environments. While present electronic circuits employ COTS (commercial-off- the-shelf) parts that necessitate and are supported with some form of thermal control systems to maintain adequate temperature for proper operation, it is highly desirable and beneficial if the thermal conditioning elements are eliminated. Amongst these benefits are: simpler system design, reduced weight and size, improved reliability, simpler maintenance, and reduced cost. Devices based on silicon-on-insulator (SOI) technology, which utilizes the addition of an insulation layer in the device structure to reduce leakage currents and to minimize parasitic junctions, are well suited for high temperatures due to reduced internal heating as compared to the conventional silicon devices, and less power consumption. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a divide-by-two frequency divider circuit built using COTS SOI logic gates was evaluated over a wide temperature range and thermal cycling to determine suitability for use in space exploration missions and terrestrial fields under extreme temperature conditions.

ESRDC - Designing and Powering the Future Fleet

DTIC Science & Technology

2018-02-22

Awards Management 301 Main Street University of South Carolina Columbia, SC 29208 1600 Hampton St, Suite 414 Phone: 803-777-7890 Columbia, SC 29208... managing short circuit faults in MVDC Systems, and 5) modeling of SiC-based electronic power converters to support accurate scalable models in S3D...Research in advanced thermal management followed three tracks. We developed models of thermal system components that are suitable for use in early stage

Electronic Equipment Proposal to Improve the Photovoltaic Systems Efficiency

NASA Astrophysics Data System (ADS)

Flores-Mena, J. E.; Juárez Morán, L. A.; Díaz Reyes, J.

2011-05-01

This paper reports a new technique proposal to improve the photovoltaic systems. It was made to design and implement an electronic system that will detect, capture, and transfer the maximum power of the photovoltaic (PV) panel to optimize the supplied power of a solar panel. The electronic system works on base technical proposal of electrical sweeping of electric characteristics using capacitive impedance. The maximum power is transformed and the solar panel energy is sent to an automotive battery. This electronic system reduces the energy lost originated when the solar radiation level decreases or the PV panel temperature is increased. This electronic system tracks, captures, and stores the PV module's maximum power into a capacitor. After, a higher voltage level step-up circuit was designed to increase the voltage of the PV module's maximum power and then its current can be sent to a battery. The experimental results show that the developed electronic system has 95% efficiency. The measurement was made to 50 W, the electronic system works rightly with solar radiation rate from 100 to 1,000 W m - 2 and the PV panel temperature rate changed from 1 to 75°C. The main advantage of this electronic system compared with conventional methods is the elimination of microprocessors, computers, and sophisticated numerical approximations, and it does not need any small electrical signals to track the maximum power. The proposed method is simple, fast, and it is also cheaper.

Radiation Hardened Electronics Destined For Severe Nuclear Reactor Environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holbert, Keith E.; Clark, Lawrence T.

Post nuclear accident conditions represent a harsh environment for electronics. The full station blackout experience at Fukushima shows the necessity for emergency sensing capabilities in a radiation-enhanced environment. This NEET (Nuclear Energy Enabling Technologies) research project developed radiation hardened by design (RHBD) electronics using commercially available technology that employs commercial off-the-shelf (COTS) devices and present generation circuit fabrication techniques to improve the total ionizing dose (TID) hardness of electronics. Such technology not only has applicability to severe accident conditions but also to facilities throughout the nuclear fuel cycle in which radiation tolerance is required. For example, with TID tolerance tomore » megarads of dose, electronics could be deployed for long-term monitoring, inspection and decontamination missions. The present work has taken a two-pronged approach, specifically, development of both board and application-specific integrated circuit (ASIC) level RHBD techniques. The former path has focused on TID testing of representative microcontroller ICs with embedded flash (eFlash) memory, as well as standalone flash devices that utilize the same fabrication technologies. The standalone flash devices are less complicated, allowing better understanding of the TID response of the crucial circuits. Our TID experiments utilize biased components that are in-situ tested, and in full operation during irradiation. A potential pitfall in the qualification of memory circuits is the lack of rigorous testing of the possible memory states. For this reason, we employ test patterns that include all ones, all zeros, a checkerboard of zeros and ones, an inverse checkerboard, and random data. With experimental evidence of improved radiation response for unbiased versus biased conditions, a demonstration-level board using the COTS devices was constructed. Through a combination of redundancy and power gating, the demonstration board exhibits radiation resilience to over 200 krad. Furthermore, our ASIC microprocessor using RHBD techniques was shown to be fully functional after an exposure of 2.5 Mrad whereas the COTS microcontroller units failed catastrophically at <100 krad. The methods developed in this work can facilitate the long-term viability of radiation-hard robotic systems, thereby avoiding obsolescence issues. As a case in point, the nuclear industry with its low purchasing power does not drive the semiconductor industry strategic plans, and the rapid advancements in electronics technology can leave legacy systems stranded.« less

Research on the EDM Technology for Micro-holes at Complex Spatial Locations

NASA Astrophysics Data System (ADS)

Y Liu, J.; Guo, J. M.; Sun, D. J.; Cai, Y. H.; Ding, L. T.; Jiang, H.

2017-12-01

For the demands on machining micro-holes at complex spatial location, several key technical problems are conquered such as micro-Electron Discharge Machining (micro-EDM) power supply system’s development, the host structure’s design and machining process technical. Through developing low-voltage power supply circuit, high-voltage circuit, micro and precision machining circuit and clearance detection system, the narrow pulse and high frequency six-axis EDM machining power supply system is developed to meet the demands on micro-hole discharging machining. With the method of combining the CAD structure design, CAE simulation analysis, modal test, ODS (Operational Deflection Shapes) test and theoretical analysis, the host construction and key axes of the machine tool are optimized to meet the position demands of the micro-holes. Through developing the special deionized water filtration system to make sure that the machining process is stable enough. To verify the machining equipment and processing technical developed in this paper through developing the micro-hole’s processing flow and test on the real machine tool. As shown in the final test results: the efficient micro-EDM machining pulse power supply system, machine tool host system, deionized filtration system and processing method developed in this paper meet the demands on machining micro-holes at complex spatial locations.

An area and power-efficient analog li-ion battery charger circuit.

PubMed

Do Valle, Bruno; Wentz, Christian T; Sarpeshkar, Rahul

2011-04-01

The demand for greater battery life in low-power consumer electronics and implantable medical devices presents a need for improved energy efficiency in the management of small rechargeable cells. This paper describes an ultra-compact analog lithium-ion (Li-ion) battery charger with high energy efficiency. The charger presented here utilizes the tanh basis function of a subthreshold operational transconductance amplifier to smoothly transition between constant-current and constant-voltage charging regimes without the need for additional area- and power-consuming control circuitry. Current-domain circuitry for end-of-charge detection negates the need for precision-sense resistors in either the charging path or control loop. We show theoretically and experimentally that the low-frequency pole-zero nature of most battery impedances leads to inherent stability of the analog control loop. The circuit was fabricated in an AMI 0.5-μm complementary metal-oxide semiconductor process, and achieves 89.7% average power efficiency and an end voltage accuracy of 99.9% relative to the desired target 4.2 V, while consuming 0.16 mm(2) of chip area. To date and to the best of our knowledge, this design represents the most area-efficient and most energy-efficient battery charger circuit reported in the literature.

Photonic Integrated Circuit (PIC) Device Structures: Background, Fabrication Ecosystem, Relevance to Space Systems Applications, and Discussion of Related Radiation Effects

NASA Technical Reports Server (NTRS)

Alt, Shannon

2016-01-01

Electronic integrated circuits are considered one of the most significant technological advances of the 20th century, with demonstrated impact in their ability to incorporate successively higher numbers transistors and construct electronic devices onto a single CMOS chip. Photonic integrated circuits (PICs) exist as the optical analog to integrated circuits; however, in place of transistors, PICs consist of numerous scaled optical components, including such "building-block" structures as waveguides, MMIs, lasers, and optical ring resonators. The ability to construct electronic and photonic components on a single microsystems platform offers transformative potential for the development of technologies in fields including communications, biomedical device development, autonomous navigation, and chemical and atmospheric sensing. Developing on-chip systems that provide new avenues for integration and replacement of bulk optical and electro-optic components also reduces size, weight, power and cost (SWaP-C) limitations, which are important in the selection of instrumentation for specific flight projects. The number of applications currently emerging for complex photonics systems-particularly in data communications-warrants additional investigations when considering reliability for space systems development. This Body of Knowledge document seeks to provide an overview of existing integrated photonics architectures; the current state of design, development, and fabrication ecosystems in the United States and Europe; and potential space applications, with emphasis given to associated radiation effects and reliability.

Low power interface IC's for electrostatic energy harvesting applications

NASA Astrophysics Data System (ADS)

Kempitiya, Asantha

The application of wireless distributed micro-sensor systems ranges from equipment diagnostic and control to real time structural and biomedical monitoring. A major obstacle in developing autonomous micro-sensor networks is the need for local electric power supply, since using a battery is often not a viable solution. This void has sparked significant interest in micro-scale power generators based on electrostatic, piezoelectric and electromagnetic energy conversion that can scavenge ambient energy from the environment. In comparison to existing energy harvesting techniques, electrostatic-based power generation is attractive as it can be integrated using mainstream silicon technologies while providing higher power densities through miniaturization. However the power output of reported electrostatic micro-generators to date does not meet the communication and computation requirements of wireless sensor nodes. The objective of this thesis is to investigate novel CMOS-based energy harvesting circuit (EHC) architectures to increase the level of harvested mechanical energy in electrostatic converters. The electronic circuits that facilitate mechanical to electrical energy conversion employing variable capacitors can either have synchronous or asynchronous architectures. The later does not require synchronization of electrical events with mechanical motion, which eliminates difficulties in gate clocking and the power consumption associated with complex control circuitry. However, the implementation of the EHC with the converter can be detrimental to system performance when done without concurrent optimization of both elements, an aspect mainly overlooked in the literature. System level analysis is performed to show that there is an optimum value for either the storage capacitor or cycle number for maximum scavenging of ambient energy. The analysis also shows that maximum power is extracted when the system approaches synchronous operation. However, there is a region of interest where the storage capacitor can be optimized to produce almost 70% of the ideal power taken as the power harvested with synchronous converters when neglecting the power consumption associated with synchronizing control circuitry. Theoretical predictions are confirmed by measurements on an asynchronous EHC implemented with a macro-scale electrostatic converter prototype. Based on the preceding analysis, the design of a novel ultra low power electrostatic integrated energy harvesting circuit is proposed for efficient harvesting of mechanical energy. The fundamental challenges of designing reliable low power sensing circuits for charge constrained electrostatic energy harvesters with capacity to self power its controller and driver stages are addressed. Experimental results are presented for a controller design implemented in AMI 0.7muM high voltage CMOS process using a macro-scale electrostatic converter prototype. The EHC produces 1.126muW for a power investment of 417nW with combined conduction and controller losses of 450nW which is a 20-30% improvement compared to prior art on electrostatic EHCs operating under charge constrain. Inherently dual plate variable capacitors harvest energy only during half of the mechanical cycle with the other half unutilized for energy conversion. To harvest mechanical energy over the complete mechanical vibration cycle, a low power energy harvesting circuit (EHC) that performs charge constrained synchronous energy conversion on a tri-plate variable capacitor for maximizing energy conversion is proposed. The tri-plate macro electrostatic generator with capacitor variation of 405pF to 1.15nF and 405pF to 1.07nF on two complementary adjacent capacitors is fabricated and used in the characterization of the designed EHC. The integrated circuit fabricated in AMI 0.7muM high voltage CMOS process, produces a total output power of 497nW to a 10muF reservoir capacitor from a 98Hz vibration signal. In summary, the thesis lays out the theoretical and experimental foundation for overcoming the main challenges associated with the design of charge constrained synchronous EHC's, making electrostatic converters a possible candidate for powering emerging communication transceivers and portable electronics.

Enhanced performance of polymer solar cells by employing a ternary cascade energy structure.

PubMed

An, Qiaoshi; Zhang, Fujun; Li, Lingliang; Zhuo, Zuliang; Zhang, Jian; Tang, Weihua; Teng, Feng

2014-08-14

We present a route to successfully tackle the two main limitations, low open circuit voltage (Voc) and limited short circuit-density (Jsc), of polymer solar cells (PSCs) based on poly(3-hexylthiophene) (P3HT) as an electron-donor. The indene-C60 bisadduct (ICBA) was selected as an electron acceptor to improve the open circuit voltage (Voc). The narrow band gap polymer poly[(4,8-bis-(2-ethylhexyloxy)-benzo[1,2-b:4,5-b']dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene)-2,6-diyl] (PBDTTT-C), as a complementary electron-donor material, was doped into the host system of P3HT:ICBA to form ternary cascade energy structured PSCs with increased Jsc. The power conversion efficiency (PCE) of P3HT:ICBA-based cells was improved from 3.32% to 4.38% by doping with 3 wt% PBDTTT-C with 1 min 150 °C annealing treatment. The 4.38% PCE of ternary PSCs is still larger than the 3.79% PCE of PSCs based on P3HT:ICBA with 10 minutes 150 °C annealing treatment.

Aging of electronics with application to nuclear power plant instrumentation. [PWR; BWR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Jr, R T; Thome, F V; Craft, C M

1983-01-01

A survey to identify areas of needed research to understand aging mechanisms for electronics in nuclear power plant instrumentation has been completed. The emphasis was on electronic components such as semiconductors, capacitors, and resistors used in safety-related instrumentation in the reactor containment area. The environmental and operational stress factors which may produce degradation during long-term operation were identified. Some attention was also given to humidity effects as related to seals and encapsulants, and failures in printed circuit boards and bonds and solder joints. Results suggest that neutron as well as gamma irradiations should be considered in simulating the aging environmentmore » for electronic components. Radiation dose-rate effects in semiconductor devices and organic capacitors need to be further investigated, as well as radiation-voltage bias synergistic effects in semiconductor devices and leakage and permeation of moisture through seals in electronics packages.« less

Free electron laser

DOEpatents

Villa, Francesco

1990-01-01

A high gain, single-pass free electron laser formed of a high brilliance electron injector source, a linear accelerator which imparts high energy to the electron beam, and an undulator capable of extremely high magnetic fields, yet with a very short period. The electron injector source is the first stage (gap) of the linear accelerator or a radial line transformer driven by fast circular switch. The linear accelerator is formed of a plurality of accelerating gaps arranged in series. These gaps are energized in sequence by releasing a single pulse of energy which propagates simultaneously along a plurality of transmission lines, each of which feeds the gaps. The transmission lines are graduated in length so that pulse power is present at each gap as the accelerated electrons pass therethrough. The transmission lines for each gap are open circuited at their ends. The undualtor has a structure similar to the accelerator, except that the transmission lines for each gap are substantially short circuited at their ends, thus converting the electric field into magnetic field. A small amount of resistance is retained in order to generate a small electric field for replenishing the electron bunch with the energy lost as it traverses through the undulator structure.

Evaluation of high temperature dielectric films for high voltage power electronic applications

NASA Technical Reports Server (NTRS)

Suthar, J. L.; Laghari, J. R.

1992-01-01

Three high temperature films, polyimide, Teflon perfluoroalkoxy and poly-P-xylene, were evaluated for possible use in high voltage power electronic applications, such as in high energy density capacitors, cables and microelectronic circuits. The dielectric properties, including permittivity and dielectric loss, were obtained in the frequency range of 50 Hz to 100 kHz at temperatures up to 200 C. The dielectric strengths at 60 Hz were determined as a function of temperature to 250 C. Confocal laser microscopy was performed to diagnose for voids and microimperfections within the film structure. The results obtained indicate that all films evaluated are capable of maintaining their high voltage properties, with minimal degradation, at temperatures up to 200 C. However, above 200 C, they lose some of their electrical properties. These films may therefore become viable candidates for high voltage power electronic applications at high temperatures.

Electronics for Deep Space Cryogenic Applications

NASA Technical Reports Server (NTRS)

Patterson, R. L.; Hammond, A.; Dickman, J. E.; Gerber, S. S.; Elbuluk, M. E.; Overton, E.

2002-01-01

Deep space probes and planetary exploration missions require electrical power management and control systems that are capable of efficient and reliable operation in very cold temperature environments. Typically, in deep space probes, heating elements are used to keep the spacecraft electronics near room temperature. The utilization of power electronics designed for and operated at low temperature will contribute to increasing efficiency and improving reliability of space power systems. At NASA Glenn Research Center, commercial-off-the-shelf devices as well as developed components are being investigated for potential use at low temperatures. These devices include semiconductor switching devices, magnetics, and capacitors. Integrated circuits such as digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being evaluated. In this paper, results will be presented for selected analog-to-digital converters, oscillators, DC/DC converters, and pulse width modulation (PWM) controllers.

Ultralow-power electronics for biomedical applications.

PubMed

Chandrakasan, Anantha P; Verma, Naveen; Daly, Denis C

2008-01-01

The electronics of a general biomedical device consist of energy delivery, analog-to-digital conversion, signal processing, and communication subsystems. Each of these blocks must be designed for minimum energy consumption. Specific design techniques, such as aggressive voltage scaling, dynamic power-performance management, and energy-efficient signaling, must be employed to adhere to the stringent energy constraint. The constraint itself is set by the energy source, so energy harvesting holds tremendous promise toward enabling sophisticated systems without straining user lifestyle. Further, once harvested, efficient delivery of the low-energy levels, as well as robust operation in the aggressive low-power modes, requires careful understanding and treatment of the specific design limitations that dominate this realm. We outline the performance and power constraints of biomedical devices, and present circuit techniques to achieve complete systems operating down to power levels of microwatts. In all cases, approaches that leverage advanced technology trends are emphasized.

Piezoelectric-based self-powered electronic adjustable impulse switches

NASA Astrophysics Data System (ADS)

Rastegar, Jahangir; Kwok, Philip

2018-03-01

Novel piezoelectric-based self-powered impulse detecting switches are presented. The switches are designed to detect shock loading events resulting in acceleration or deceleration above prescribed levels and durations. The prescribed acceleration level and duration thresholds are adjustable. They are provided with false trigger protection logic. The impulse switches are provided with electronic and logic circuitry to detect prescribed impulse events and reject events such as high amplitude but short duration shocks, and transportation vibration and similar low amplitude and relatively long duration events. They can be mounted directly onto electronics circuit boards, thereby significantly simplifying the electrical and electronic circuitry, simplifying the assembly process and total cost, significantly reducing the occupied volume, and in some applications eliminating the need for physical wiring to and from the impulse switches. The design of prototypes and testing under realistic conditions are presented.

Solid state microelectronics tolerant to radiation and high temperature. [JFET thick film hybrids

NASA Technical Reports Server (NTRS)

Draper, B. L.; Palmer, D. W.

1981-01-01

The 300 C electronics technology based on JFET thick film hybrids was tested up to 10 to the 9th power rad gamma (Si) and 10 to the 15th power neutrons/sq cm. Circuits and individual components from this technology all survived this total dose although some devices required 1 hour of annealing at 200 or 300 C to regain functionality. This technology used with real time annealing should function to levels greater than 10 to the 10th power rad gamma and 10 to the 16th power n/sq cm.

A Measurement Method for the Power Generation Characteristics of Piezoelectric Elements

NASA Astrophysics Data System (ADS)

Ichiki, Masaaki; Maeda, Ryutaro; Kitahara, Tokio

The electrical and mechanical properties of piezoelectrics for power generation in wearable electronic devices were measured using an experimental apparatus. With a 40 N applied load, the peak output power of PZT system transducers was measured at 3 μW, comprising 1.8 V and 1.7 μA. The electro-mechanical coupling constant was measured at 0.53 using PZT in the same apparatus in short- and open-circuit conditions. It is possible to harness mW power by installing piezoelectric transducers on the soles of footwear, where the total weight of a human is applied most efficiently.

Nuclear Science Symposium, 19th, and Nuclear Power Systems Symposium, 4th, Miami, Fla., December 6-8, 1972, Proceedings.

NASA Technical Reports Server (NTRS)

1973-01-01

Major topics covered include radiation monitoring instrumentation, nuclear circuits and systems, biomedical applications of nuclear radiation in diagnosis and therapy, plasma research for fusion power, reactor control and instrumentation, nuclear power standards, and applications of digital computers in nuclear power plants. Systems and devices for space applications are described, including the Apollo alpha spectrometer, a position sensitive detection system for UV and X-ray photons, a 4500-volt electron multiplier bias supply for satellite use, spark chamber systems, proportional counters, and other devices. Individual items are announced in this issue.

Experimental observation of sub-terahertz backward-wave amplification in a multi-level microfabricated slow-wave circuit

NASA Astrophysics Data System (ADS)

Baik, Chan-Wook; Ahn, Ho Young; Kim, Yongsung; Lee, Jooho; Hong, Seogwoo; Lee, Sang Hun; Choi, Jun Hee; Kim, Sunil; Jeon, So-Yeon; Yu, SeGi; Collins, George; Read, Michael E.; Lawrence Ives, R.; Kim, Jong Min; Hwang, Sungwoo

2015-11-01

In our earlier paper dealing with dispersion retrieval from ultra-deep, reactive-ion-etched, slow-wave circuits on silicon substrates, it was proposed that splitting high-aspect-ratio circuits into multilevels enabled precise characterization in sub-terahertz frequency regime. This achievement prompted us to investigate beam-wave interaction through a vacuum-sealed integration with a 15-kV, 85-mA, thermionic, electron gun. Our experimental study demonstrates sub-terahertz, backward-wave amplification driven by an external oscillator. The measured output shows a frequency downshift, as well as power amplification, from beam loading even with low beam perveance. This offers a promising opportunity for the development of terahertz radiation sources, based on silicon technologies.

Numerical approach of the quantum circuit theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silva, J.J.B., E-mail: jaedsonfisica@hotmail.com; Duarte-Filho, G.C.; Almeida, F.A.G.

2017-03-15

In this paper we develop a numerical method based on the quantum circuit theory to approach the coherent electronic transport in a network of quantum dots connected with arbitrary topology. The algorithm was employed in a circuit formed by quantum dots connected each other in a shape of a linear chain (associations in series), and of a ring (associations in series, and in parallel). For both systems we compute two current observables: conductance and shot noise power. We find an excellent agreement between our numerical results and the ones found in the literature. Moreover, we analyze the algorithm efficiency formore » a chain of quantum dots, where the mean processing time exhibits a linear dependence with the number of quantum dots in the array.« less

Experimental observation of sub-terahertz backward-wave amplification in a multi-level microfabricated slow-wave circuit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baik, Chan-Wook, E-mail: cw.baik@samsung.com; Ahn, Ho Young; Kim, Yongsung

2015-11-09

In our earlier paper dealing with dispersion retrieval from ultra-deep, reactive-ion-etched, slow-wave circuits on silicon substrates, it was proposed that splitting high-aspect-ratio circuits into multilevels enabled precise characterization in sub-terahertz frequency regime. This achievement prompted us to investigate beam-wave interaction through a vacuum-sealed integration with a 15-kV, 85-mA, thermionic, electron gun. Our experimental study demonstrates sub-terahertz, backward-wave amplification driven by an external oscillator. The measured output shows a frequency downshift, as well as power amplification, from beam loading even with low beam perveance. This offers a promising opportunity for the development of terahertz radiation sources, based on silicon technologies.

Performance of epitaxial back surface field cells

NASA Technical Reports Server (NTRS)

Brandhorst, H. W., Jr.; Baraona, C. R.; Swartz, C. K.

1973-01-01

Epitaxial back surface field structures were formed by depositing a 10 micron thick 10 Omega-cm epitaxial silicon layer onto substrates with resistivities of 0.01, 0.1, 1.0 and 10 Omega-cm. A correlation between cell open-circuit voltage and substrate resistivity was observed and was compared to theory. The cells were also irradiated with 1 MeV electrons to a fluence of 5 X 10 to the 15th power e/cm2. The decrease of cell open-circuit voltage was in excellent agreement with theoretical predictions and the measured short circuit currents were within 2% of the prediction. Calculations are presented of optimum cell performance as functions of epitaxial layer thickness, radiation fluence and substrate diffusion length.

Design and Fabrication of Multifunctional Portable Bi2Te3-Based Thermoelectric Camping Lamp

NASA Astrophysics Data System (ADS)

Zhou, Yi; Li, Gongping

2018-05-01

Camping lamps have been widely used in the lighting, power supply, and intelligent electronic equipment fields. However, applications of traditional chemical and solar camping lamps are largely limited by the physical size of the source and operating conditions. A new prototype multifunctional portable Bi2Te3-based thermoelectric camping lamp (TECL) has been designed and fabricated. Ten parallel light-emitting diodes were lit directly by a Bi2Te3-based thermoelectric generator (TEG). The highest short-circuit current of 0.38 A and open-circuit voltage of 4.2 V were obtained at temperature difference of 115 K. This TECL is attractive for use in multifunctional and extreme applications as it integrates a portable heat source, high-performance TEG, and power management unit.

Design and Fabrication of Multifunctional Portable Bi2Te3-Based Thermoelectric Camping Lamp

NASA Astrophysics Data System (ADS)

Zhou, Yi; Li, Gongping

2018-07-01

Camping lamps have been widely used in the lighting, power supply, and intelligent electronic equipment fields. However, applications of traditional chemical and solar camping lamps are largely limited by the physical size of the source and operating conditions. A new prototype multifunctional portable Bi2Te3-based thermoelectric camping lamp (TECL) has been designed and fabricated. Ten parallel light-emitting diodes were lit directly by a Bi2Te3-based thermoelectric generator (TEG). The highest short-circuit current of 0.38 A and open-circuit voltage of 4.2 V were obtained at temperature difference of 115 K. This TECL is attractive for use in multifunctional and extreme applications as it integrates a portable heat source, high-performance TEG, and power management unit.

A universal self-charging system driven by random biomechanical energy for sustainable operation of mobile electronics

NASA Astrophysics Data System (ADS)

Niu, Simiao; Wang, Xiaofeng; Yi, Fang; Zhou, Yu Sheng; Wang, Zhong Lin

2015-12-01

Human biomechanical energy is characterized by fluctuating amplitudes and variable low frequency, and an effective utilization of such energy cannot be achieved by classical energy-harvesting technologies. Here we report a high-efficient self-charging power system for sustainable operation of mobile electronics exploiting exclusively human biomechanical energy, which consists of a high-output triboelectric nanogenerator, a power management circuit to convert the random a.c. energy to d.c. electricity at 60% efficiency, and an energy storage device. With palm tapping as the only energy source, this power unit provides a continuous d.c. electricity of 1.044 mW (7.34 W m-3) in a regulated and managed manner. This self-charging unit can be universally applied as a standard `infinite-lifetime' power source for continuously driving numerous conventional electronics, such as thermometers, electrocardiograph system, pedometers, wearable watches, scientific calculators and wireless radio-frequency communication system, which indicates the immediate and broad applications in personal sensor systems and internet of things.

A universal self-charging system driven by random biomechanical energy for sustainable operation of mobile electronics.

PubMed

Niu, Simiao; Wang, Xiaofeng; Yi, Fang; Zhou, Yu Sheng; Wang, Zhong Lin

2015-12-11

Human biomechanical energy is characterized by fluctuating amplitudes and variable low frequency, and an effective utilization of such energy cannot be achieved by classical energy-harvesting technologies. Here we report a high-efficient self-charging power system for sustainable operation of mobile electronics exploiting exclusively human biomechanical energy, which consists of a high-output triboelectric nanogenerator, a power management circuit to convert the random a.c. energy to d.c. electricity at 60% efficiency, and an energy storage device. With palm tapping as the only energy source, this power unit provides a continuous d.c. electricity of 1.044 mW (7.34 W m(-3)) in a regulated and managed manner. This self-charging unit can be universally applied as a standard 'infinite-lifetime' power source for continuously driving numerous conventional electronics, such as thermometers, electrocardiograph system, pedometers, wearable watches, scientific calculators and wireless radio-frequency communication system, which indicates the immediate and broad applications in personal sensor systems and internet of things.

Vacuum Microelectronic Field Emission Array Devices for Microwave Amplification.

NASA Astrophysics Data System (ADS)

Mancusi, Joseph Edward

This dissertation presents the design, analysis, and measurement of vacuum microelectronic devices which use field emission to extract an electron current from arrays of silicon cones. The arrays of regularly-spaced silicon cones, the field emission cathodes or emitters, are fabricated with an integrated gate electrode which controls the electric field at the tip of the cone, and thus the electron current. An anode or collector electrode is placed above the array to collect the emission current. These arrays, which are fabricated in a standard silicon processing facility, are developed for use as high power microwave amplifiers. Field emission has been studied extensively since it was first characterized in 1928, however due to the large electric fields required practical field emission devices are difficult to make. With the development of the semiconductor industry came the development of fabrication equipment and techniques which allow for the manufacture of the precision micron-scale structures necessary for practical field emission devices. The active region of a field emission device is a vacuum, therefore the electron travel is ballistic. This analysis of field emission devices includes electric field and electron emission modeling, development of a device equivalent circuit, analysis of the parameters in the equivalent circuit, and device testing. Variations in device structure are taken into account using a statistical model based upon device measurements. Measurements of silicon field emitter arrays at DC and RF are presented and analyzed. In this dissertation, the equivalent circuit is developed from the analysis of the device structure. The circuit parameters are calculated from geometrical considerations and material properties, or are determined from device measurements. It is necessary to include the emitter resistance in the equivalent circuit model since relatively high resistivity silicon wafers are used. As is demonstrated, the circuit model accurately predicts the magnitude of the emission current at a number of typical bias current levels when the device is operating at frequencies within the range of 10 MHz to 1 GHz. At low frequencies and at high frequencies within this range, certain parameters are negligible, and simplifications may be made in the equivalent circuit model.

Modeling of power control schemes in induction cooking devices

NASA Astrophysics Data System (ADS)

Beato, Alessio; Conti, Massimo; Turchetti, Claudio; Orcioni, Simone

2005-06-01

In recent years, with remarkable advancements of power semiconductor devices and electronic control systems, it becomes possible to apply the induction heating technique for domestic use. In order to achieve the supply power required by these devices, high-frequency resonant inverters are used: the force commutated, half-bridge series resonant converter is well suited for induction cooking since it offers an appropriate balance between complexity and performances. Power control is a key issue to attain efficient and reliable products. This paper describes and compares four power control schemes applied to the half-bridge series resonant inverter. The pulse frequency modulation is the most common control scheme: according to this strategy, the output power is regulated by varying the switching frequency of the inverter circuit. Other considered methods, originally developed for induction heating industrial applications, are: pulse amplitude modulation, asymmetrical duty cycle and pulse density modulation which are respectively based on variation of the amplitude of the input supply voltage, on variation of the duty cycle of the switching signals and on variation of the number of switching pulses. Each description is provided with a detailed mathematical analysis; an analytical model, built to simulate the circuit topology, is implemented in the Matlab environment in order to obtain the steady-state values and waveforms of currents and voltages. For purposes of this study, switches and all reactive components are modelled as ideal and the "heating-coil/pan" system is represented by an equivalent circuit made up of a series connected resistance and inductance.

Capacitive charge generation apparatus and method for testing circuits

DOEpatents

Cole, E.I. Jr.; Peterson, K.A.; Barton, D.L.

1998-07-14

An electron beam apparatus and method for testing a circuit are disclosed. The electron beam apparatus comprises an electron beam incident on an outer surface of an insulating layer overlying one or more electrical conductors of the circuit for generating a time varying or alternating current electrical potential on the surface; and a measurement unit connected to the circuit for measuring an electrical signal capacitively coupled to the electrical conductors to identify and map a conduction state of each of the electrical conductors, with or without an electrical bias signal being applied to the circuit. The electron beam apparatus can further include a secondary electron detector for forming a secondary electron image for registration with a map of the conduction state of the electrical conductors. The apparatus and method are useful for failure analysis or qualification testing to determine the presence of any open-circuits or short-circuits, and to verify the continuity or integrity of electrical conductors buried below an insulating layer thickness of 1-100 {micro}m or more without damaging or breaking down the insulating layer. The types of electrical circuits that can be tested include integrated circuits, multi-chip modules, printed circuit boards and flexible printed circuits. 7 figs.

Capacitive charge generation apparatus and method for testing circuits

DOEpatents

Cole, Jr., Edward I.; Peterson, Kenneth A.; Barton, Daniel L.

1998-01-01

An electron beam apparatus and method for testing a circuit. The electron beam apparatus comprises an electron beam incident on an outer surface of an insulating layer overlying one or more electrical conductors of the circuit for generating a time varying or alternating current electrical potential on the surface; and a measurement unit connected to the circuit for measuring an electrical signal capacitively coupled to the electrical conductors to identify and map a conduction state of each of the electrical conductors, with or without an electrical bias signal being applied to the circuit. The electron beam apparatus can further include a secondary electron detector for forming a secondary electron image for registration with a map of the conduction state of the electrical conductors. The apparatus and method are useful for failure analysis or qualification testing to determine the presence of any open-circuits or short-circuits, and to verify the continuity or integrity of electrical conductors buried below an insulating layer thickness of 1-100 .mu.m or more without damaging or breaking down the insulating layer. The types of electrical circuits that can be tested include integrated circuits, multi-chip modules, printed circuit boards and flexible printed circuits.

Direct current hybrid breakers: A design and its realization

NASA Astrophysics Data System (ADS)

Atmadji, Ali Mahfudz Surya

2000-12-01

The use of semiconductors for electric power circuit breakers instead of conventional breakers remains a utopia when designing fault current interrupters for high power networks. The major problems concerning power semiconductor circuit breakers are the excessive heat losses and their sensitivity to transients. However, conventional breakers are capable of dealing with such matters. A combination of the two methods, or so-called `hybrid breakers', would appear to be a solution; however, hybrid breakers use separate parallel branches for conducting the main current and interrupting the short-circuit current. Such breakers are intended for protecting direct current (DC) traction systems. In this thesis hybrid switching techniques for current limitation and purely solidstate current interruption are investigated for DC breakers. This work analyzes the transient behavior of hybrid breakers and compares their operations with conventional breakers and similar solid-state devices in DC systems. Therefore a hybrid breaker was constructed and tested in a specially designed high power test circuit. A vacuum breaker was chosen as the main breaker in the main conducting path; then a commutation path was connected across the vacuum breaker where it provided current limitation and interruption. The commutation path operated only during any current interruption and the process required additional circuits. These included a certain energy storage, overvoltage suppressor and commutation switch. So that when discharging this energy, a controlled counter-current injection could be produced. That counter-current opposed the main current in the breaker by superposition in order to create a forced current-zero. One-stage and two-stage commutation circuits have been treated extensively. This study project contains both theoretical and experimental investigations. A direct current shortcircuit source was constructed capable of delivering power equivalent to a fault. It supplied a direct voltage of 1kVDC which was rectified having been obtained from a 3-phase lOkV/380V supply. The source was successfully tested to deliver a fault current of 7kA with a time constant of 5ms. The hybrid breaker that was developed could provide protection for 750VDC traction systems. The breaker was equipped with a fault- recognizing circuit based on a current level triggering. An electronic circuit was built for this need and was included in the system. It monitored the system continuously and took action by generating trip signals when a fault was recognized. Interruption was followed by a suitable timing of the fast contact separation in the main breaker and the current-zero creation. An electrodynamically driven mechanism was successfully tested having a dead-time of 300μs to separate the main breaker contacts. Furthermore, a maximum peak current injection of RA at a frequency of 500Hz could be obtained in order to produce an artificial current-zero in the vacuum breaker. A successful current interruption with a prospective value of RA was achieved by the hybrid switching technique. In addition, measures were taken to prevent overvoltages. Experimentally, the concept of a hybrid breaker was compared with the functioning of all mechanical (air breaker) and all electronical (IGCT breaker) versions. Although a single stage interrupting method was verified experimentally, two two-stage interrupting methods were analyzed theoretically.

Magnetically Controlled Variable Transformer

NASA Technical Reports Server (NTRS)

Kleiner, Charles T.

1994-01-01

Improved variable-transformer circuit, output voltage and current of which controlled by use of relatively small current supplied at relatively low power to control windings on its magnetic cores. Transformer circuits of this type called "magnetic amplifiers" because ratio between controlled output power and power driving control current of such circuit large. This ratio - power gain - can be as large as 100 in present circuit. Variable-transformer circuit offers advantages of efficiency, safety, and controllability over some prior variable-transformer circuits.

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

2002-01-01

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

Three-dimensional architecture hybrid perovskite solar cells using CdS nanorod arrays as an electron transport layer

NASA Astrophysics Data System (ADS)

Song, Zihang; Tong, Guoqing; Li, Huan; Li, Guopeng; Ma, Shuai; Yu, Shimeng; Liu, Qian; Jiang, Yang

2018-01-01

Three-dimensional (3D) architecture perovskite solar cells (PSCs) using CdS nanorod (NR) arrays as an electron transport layer were designed and prepared layer-by-layer via a physical-chemical vapor deposition (P-CVD) process. The CdS NRs not only provided a scaffold to the perovskite film, but also increased the interfacial contact between the perovskite film and electron transport layer. As an optimized result, a high power conversion efficiency of 12.46% with a short-circuit current density of 19.88 mA cm-2, an open-circuit voltage of 1.01 V and a fill factor of 62.06% was obtained after 12 h growth of CdS NRs. It was four times the efficiency of contrast planar structure with a similar thickness. The P-CVD method assisted in achieving flat and voidless CH3NH3PbI3-x Cl x perovskite film and binding the CdS NRs and perovskite film together. The different density of CdS NRs had obvious effects on light transmittance of 350-550 nm, the interfacial area and the difficulty of combining layers. Moreover, the efficient 1D transport paths for electrons and multiple absorption of light, which are generated in 3D architecture, were beneficial to realize a decent power conversion efficiency.

Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas

NASA Astrophysics Data System (ADS)

Vendik, O. G.; Vendik, I. B.; Tural'chuk, P. A.; Parnes, Ya. M.; Parnes, M. D.

2016-11-01

A technique for synthesis of microwave power amplifiers based on transistors with a AlGaN/GaN heterojunction is discussed. Special focus is on the development of a technique for synthesis of transformation circuits of the power amplifier to increase efficiency with a retained high output power. The use of independent matching at the harmonic frequencies and fundamental frequency makes it possible to control the attainable efficiency in a wide frequency band along with the total suppression of harmonics beyond the operational band. Microwave power amplifiers for operation at 4 and 9 GHz have been developed and experimentally investigated.

NREL Technologies Honored at R&D 100 Awards Ceremony | News | NREL

Science.gov Websites

Buildings research group. The award in the Analytical/Test category went to the Battery Internal Short -Circuit Device developed by Matthew Keyser and Ahmad Pesaran from NREL's Energy Storage research group Advanced Power Electronics and Electric Machines research group were part of that project. Booten and

Fundamental Issues in Space Electronics Reliability: Negative Bias Temperature Instability

DTIC Science & Technology

2010-12-01

Mintarno, S. Mitra, S. Krishnan, Y. Cao, “Circuit Aging Prediction for Low-Power Operation,” Proc. IEEE/CICC (2009) [7] D. A Neaman , Semiconductor Physics...dielectric based field effect transistors,” J. Appl. Phys. 104 124109 (2008) [6] D. A Neaman , Semiconductor Physics and Devices, NY: McGraw Hill

78 FR 57648 - Notice of Issuance of Final Determination Concerning Video Teleconferencing Server

Federal Register 2010, 2011, 2012, 2013, 2014

2013-09-19

... the Chinese- origin Video Board and the Filter Board, impart the essential character to the video... includes the codec; a network filter electronic circuit board (``Filter Board''); a housing case; a power... (``Linux software''). The Linux software allows the Filter Board to inspect each Ethernet packet of...

Applying the Multisim Technology to Teach the Course of High Frequency Power Amplifier

ERIC Educational Resources Information Center

Lv, Gang; Xue, Yuan-Sheng

2011-01-01

As one important professional base course in the electric information specialty, the course of "high frequency electronic circuit" has strong theoretical characteristic and abstract content. To enhance the teaching quality of this course, the computer simulation technology based on Multisim is introduced into the teaching of "high…

Christmas Light Display

NASA Astrophysics Data System (ADS)

Ross, Arthur; Renfro, Timothy

2012-03-01

The Digital Electronics class at McMurry University created a Christmas light display that toggles the power of different strands of lights, according to what frequencies are played in a song, as an example of an analog to digital circuit. This was accomplished using a BA3830S IC six-band audio filter and six solid-state relays.

30 CFR 75.519 - Main power circuits; disconnecting switches.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Main power circuits; disconnecting switches. 75... MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Electrical Equipment-General § 75.519 Main power circuits; disconnecting switches. [Statutory Provision] In all main power circuits...

KENNEDY SPACE CENTER, FLA. - During power-up of the orbiter Discovery in the Orbiter Processing Facility, a technician (left) looks at the circuit breaker lights in the cabin. Discovery has been undergoing Orbiter Major Modifications in the past year, ranging from wiring, control panels and black boxes to gaseous and fluid systems tubing and components. These systems were deserviced, disassembled, inspected, modified, reassembled, checked out and reserviced, as were most other systems onboard. The work includes the installation of the Multifunction Electronic Display Subsystem (MEDS) - a state-of-the-art “glass cockpit.”

NASA Image and Video Library

2003-08-27

KENNEDY SPACE CENTER, FLA. - During power-up of the orbiter Discovery in the Orbiter Processing Facility, a technician (left) looks at the circuit breaker lights in the cabin. Discovery has been undergoing Orbiter Major Modifications in the past year, ranging from wiring, control panels and black boxes to gaseous and fluid systems tubing and components. These systems were deserviced, disassembled, inspected, modified, reassembled, checked out and reserviced, as were most other systems onboard. The work includes the installation of the Multifunction Electronic Display Subsystem (MEDS) - a state-of-the-art “glass cockpit.”

Prediction and Measurement of Temperature Fields in Silicon-on-Insulator Electronic Circuits

DTIC Science & Technology

1995-08-01

common dimensions are given in Table 1. Almost all of the device power is dissipated in the channel. The electri- cally insulating implanted layer...data. Region or Component substrate Material SOI implanted insulating layers single-crystal silicon, 3 x 1015 boron atoms cm -3 Thermal... implanted silicon-dioxide layer in SOI wafers. The data for each device for varying powers fall near a line originating at P = 0 and T0 = 303 K

Electronic circuits: A compilation. [for electronic equipment in telecommunication

NASA Technical Reports Server (NTRS)

1976-01-01

A compilation containing articles on newly developed electronic circuits and systems is presented. It is divided into two sections: (1) section 1 on circuits and techniques of particular interest in communications technology, and (2) section 2 on circuits designed for a variety of specific applications. The latest patent information available is also given. Circuit diagrams are shown.

Experimental characterization of a bi-dimensional array of negative capacitance piezo-patches for vibroacoustic control

NASA Astrophysics Data System (ADS)

Tateo, F.; Collet, M.; Ouisse, M.; Ichchou, M. N.; Cunefare, K. A.

2013-04-01

A recent technological revolution in the fields of integrated MEMS has finally rendered possible the mechanical integration of active smart materials, electronics and power supply systems for the next generation of smart composite structures. Using a bi-dimensional array of electromechanical transducers, composed by piezo-patches connected to a synthetic negative capacitance, it is possible to modify the dynamics of the underlying structure. In this study, we present an application of the Floquet-Bloch theorem for vibroacoustic power flow optimization, by means of distributed shunted piezoelectric material. In the context of periodically distributed damped 2D mechanical systems, this numerical approach allows one to compute the multi-modal waves dispersion curves into the entire first Brillouin zone. This approach also permits optimization of the piezoelectric shunting electrical impedance, which controls energy diffusion into the proposed semi-active distributed set of cells. Furthermore, we present experimental evidence that proves the effectiveness of the proposed control method. The experiment requires a rectangular metallic plate equipped with seventy-five piezo-patches, controlled independently by electronic circuits. More specifically, the out-of-plane displacements and the averaged kinetic energy of the controlled plate are compared in two different cases (open-circuit and controlled circuit). The resulting data clearly show how this proposed technique is able to damp and selectively reflect the incident waves.

Local instability driving extreme events in a pair of coupled chaotic electronic circuits

NASA Astrophysics Data System (ADS)

de Oliveira, Gilson F.; Di Lorenzo, Orlando; de Silans, Thierry Passerat; Chevrollier, Martine; Oriá, Marcos; Cavalcante, Hugo L. D. de Souza

2016-06-01

For a long time, extreme events happening in complex systems, such as financial markets, earthquakes, and neurological networks, were thought to follow power-law size distributions. More recently, evidence suggests that in many systems the largest and rarest events differ from the other ones. They are dragon kings, outliers that make the distribution deviate from a power law in the tail. Understanding the processes of formation of extreme events and what circumstances lead to dragon kings or to a power-law distribution is an open question and it is a very important one to assess whether extreme events will occur too often in a specific system. In the particular system studied in this paper, we show that the rate of occurrence of dragon kings is controlled by the value of a parameter. The system under study here is composed of two nearly identical chaotic oscillators which fail to remain in a permanently synchronized state when coupled. We analyze the statistics of the desynchronization events in this specific example of two coupled chaotic electronic circuits and find that modifying a parameter associated to the local instability responsible for the loss of synchronization reduces the occurrence of dragon kings, while preserving the power-law distribution of small- to intermediate-size events with the same scaling exponent. Our results support the hypothesis that the dragon kings are caused by local instabilities in the phase space.

A pacemaker powered by an implantable biofuel cell operating under conditions mimicking the human blood circulatory system--battery not included.

PubMed

Southcott, Mark; MacVittie, Kevin; Halámek, Jan; Halámková, Lenka; Jemison, William D; Lobel, Robert; Katz, Evgeny

2013-05-07

Biocatalytic electrodes made of buckypaper were modified with PQQ-dependent glucose dehydrogenase on the anode and with laccase on the cathode and were assembled in a flow biofuel cell filled with serum solution mimicking the human blood circulatory system. The biofuel cell generated an open circuitry voltage, Voc, of ca. 470 mV and a short circuitry current, Isc, of ca. 5 mA (a current density of 0.83 mA cm(-2)). The power generated by the implantable biofuel cell was used to activate a pacemaker connected to the cell via a charge pump and a DC-DC converter interface circuit to adjust the voltage produced by the biofuel cell to the value required by the pacemaker. The voltage-current dependencies were analyzed for the biofuel cell connected to an Ohmic load and to the electronic loads composed of the interface circuit, or the power converter, and the pacemaker to study their operation. The correct pacemaker operation was confirmed using a medical device - an implantable loop recorder. Sustainable operation of the pacemaker was achieved with the system closely mimicking human physiological conditions using a single biofuel cell. This first demonstration of the pacemaker activated by the physiologically produced electrical energy shows promise for future electronic implantable medical devices powered by electricity harvested from the human body.

RF MEMS and Their Applications in NASA's Space Communication Systems

NASA Technical Reports Server (NTRS)

Williams, W. Daniel; Ponchak, George E.; Simons, Rainee N.; Zaman, Afroz; Kory, Carol; Wintucky, Edwin; Wilson, Jeffrey D.; Scardelletti, Maximilian; Lee, Richard; Nguyen, Hung

2001-01-01

Radio frequency (RF) and microwave communication systems rely on frequency, amplitude, and phase control circuits to efficiently use the available spectrum. Phase control circuits are required for electronically scanning phase array antennas that enable radiation pattern shaping, scanning, and hopping. Two types of phase shifters, which are the phase control circuits, are most often used. The first is comprised of two circuits with different phase characteristics such as two transmission lines of different lengths or a high pass and low pass filter and a switch that directs the RF power through one of the two circuits. Alternatively, a variable capacitor, or varactor, is used to change the effective electrical path length of a transmission line, which changes the phase characteristics. Filter banks are required for the diplexer at the front end of wide band communication satellites. These filters greatly increase the size and mass of the RF/microwave systems, but smaller diplexers may be made with a low loss varactor or a group of capacitors, a switch and an inductor.

Design and development of line type modulators for high impedance electron gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dixit, Kavita P.; Tillu, Abhijit; Chavan, Ramchandra

Conventional line type modulators are routinely used for powering pulsed power microwave devices such as magnetrons and klystrons used for radar, medical and scientific applications. The load impedance (operating point) is fairly well defined in these cases, and makes the design of the discharging circuit of the modulator straight forward. This paper describes the Line type modulators that have been developed and being routinely used for powering the Triode Electron Gun of industrial electron linacs. The beam parameters of such guns are user defined and the pulse current varies from few mA to 800mA (typ). The beam energies requirement variesmore » from 40 keV to 80 keV. Hence the impedance offered by the electron gun to the power source (modulator) is not well defined. The load capacitance which is inclusive of the various stray capacitances along with the intrinsic gun capacitance is ∼ 200-400 pF. This capacitance, which depends on the configuration, shunts the load and makes the effective load highly capacitive with the resistive part varying over a wide range. The paper describes the design and development of conventional line type modulators for powering Electron gun load of the type described above. (author)« less

Electronic circuits and systems: A compilation. [including integrated circuits, logic circuits, varactor diode circuits, low pass filters, and optical equipment circuits

NASA Technical Reports Server (NTRS)

1975-01-01

Technological information is presented electronic circuits and systems which have potential utility outside the aerospace community. Topics discussed include circuit components such as filters, converters, and integrators, circuits designed for use with specific equipment or systems, and circuits designed primarily for use with optical equipment or displays.

Electronic circuit for measuring series connected electrochemical cell voltages

DOEpatents

Ashtiani, Cyrus N.; Stuart, Thomas A.

2000-01-01

An electronic circuit for measuring voltage signals in an energy storage device is disclosed. The electronic circuit includes a plurality of energy storage cells forming the energy storage device. A voltage divider circuit is connected to at least one of the energy storage cells. A current regulating circuit is provided for regulating the current through the voltage divider circuit. A voltage measurement node is associated with the voltage divider circuit for producing a voltage signal which is proportional to the voltage across the energy storage cell.

Multiple output power supply circuit for an ion engine with shared upper inverter

NASA Technical Reports Server (NTRS)

Cardwell, Jr., Gilbert I. (Inventor); Phelps, Thomas K. (Inventor)

2001-01-01

A power supply circuit for an ion engine suitable for a spacecraft is coupled to a bus having a bus input and a bus return. The power supply circuit has a first primary winding of a first transformer. An upper inverter circuit is coupled to the bus input and the first primary winding. The power supply circuit further includes a first lower inverter circuit coupled to the bus return and the first primary winding. The second primary winding of a second transformer is coupled to the upper inverter circuit. A second lower inverter circuit is coupled to the bus return and the second primary winding.

Preliminary validation of a new magnetic wireless blood pump.

PubMed

Kim, Sung Hoon; Ishiyama, Kazushi; Hashi, Shuichiro; Shiraishi, Yasuyuki; Hayatsu, Yukihiro; Akiyama, Masatoshi; Saiki, Yoshikatsu; Yambe, Tomoyuki

2013-10-01

In general, a blood pump must be small, have a simple configuration, and have sufficient hydrodynamic performance. Herein, we introduce new mechanisms for a wireless blood pump that is small and simple and provides wireless and battery-free operation. To achieve wireless and battery-free operation, we implement magnetic torque and force control methods that use two external drivers: an external coil and a permanent magnet with a DC-motor, respectively. Power harvesting can be used to drive an electronic circuit for wireless monitoring (the observation of the pump conditions and temperature) without the use of an internal battery. The power harvesting will be used as a power source to drive other electronic devices, such as various biosensors with their driving circuits. To have both a compact size and sufficient pumping capability, the fully magnetic impeller has five stages and each stage includes four backward-curved blades. The pump has total and inner volumes of 20 and 9.8 cc, respectively, and weighs 52 g. The pump produces a flow rate of approximately 8 L/min at 80 mm Hg and the power generator produces 0.3 W of electrical power at 120 Ω. The pump also produces a minimum flow rate of 1.5 L/min and a pressure of 30 mm Hg for circulation at a maximum distance of 7.5 cm. © 2013 Wiley Periodicals, Inc. and International Center for Artificial Organs and Transplantation.

Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage

NASA Astrophysics Data System (ADS)

Namai, Masaki; An, Junjie; Yano, Hiroshi; Iwamuro, Noriyuki

2018-07-01

In this study, the experimental evaluation and numerical analysis of short-circuit mechanisms of 1200 V SiC planar and trench MOSFETs were conducted at various DC bus voltages from 400 to 800 V. Investigation of the impact of DC bus voltage on short-circuit capability yielded results that are extremely useful for many existing power electronics applications. Three failure mechanisms were identified in this study: thermal runaway, MOS channel current following device turn-off, and rupture of the gate oxide layer (gate oxide layer damage). The SiC MOSFETs experienced lattice temperatures exceeding 1000 K during the short-circuit transient; as Si insulated gate bipolar transistors (IGBTs) are not typically subject to such temperatures, the MOSFETs experienced distinct failure modes, and the mode experienced was significantly influenced by the DC bus voltage. In conclusion, suggestions regarding the SiC MOSFET design and operation methods that would enhance device robustness are proposed.

30 CFR 75.519 - Main power circuits; disconnecting switches.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Main power circuits; disconnecting switches. 75... § 75.519 Main power circuits; disconnecting switches. [Statutory Provision] In all main power circuits, disconnecting switches shall be installed underground within 500 feet of the bottoms of shafts and boreholes...

30 CFR 75.519 - Main power circuits; disconnecting switches.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Main power circuits; disconnecting switches. 75... § 75.519 Main power circuits; disconnecting switches. [Statutory Provision] In all main power circuits, disconnecting switches shall be installed underground within 500 feet of the bottoms of shafts and boreholes...

30 CFR 75.519 - Main power circuits; disconnecting switches.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Main power circuits; disconnecting switches. 75... § 75.519 Main power circuits; disconnecting switches. [Statutory Provision] In all main power circuits, disconnecting switches shall be installed underground within 500 feet of the bottoms of shafts and boreholes...

30 CFR 75.519 - Main power circuits; disconnecting switches.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Main power circuits; disconnecting switches. 75... § 75.519 Main power circuits; disconnecting switches. [Statutory Provision] In all main power circuits, disconnecting switches shall be installed underground within 500 feet of the bottoms of shafts and boreholes...

30 CFR 77.500 - Electric power circuits and electric equipment; deenergization.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Electric power circuits and electric equipment... OF UNDERGROUND COAL MINES Electrical Equipment-General § 77.500 Electric power circuits and electric equipment; deenergization. Power circuits and electric equipment shall be deenergized before work is done on...

30 CFR 77.500 - Electric power circuits and electric equipment; deenergization.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Electric power circuits and electric equipment... OF UNDERGROUND COAL MINES Electrical Equipment-General § 77.500 Electric power circuits and electric equipment; deenergization. Power circuits and electric equipment shall be deenergized before work is done on...

30 CFR 77.500 - Electric power circuits and electric equipment; deenergization.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Electric power circuits and electric equipment... OF UNDERGROUND COAL MINES Electrical Equipment-General § 77.500 Electric power circuits and electric equipment; deenergization. Power circuits and electric equipment shall be deenergized before work is done on...

30 CFR 77.500 - Electric power circuits and electric equipment; deenergization.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Electric power circuits and electric equipment... OF UNDERGROUND COAL MINES Electrical Equipment-General § 77.500 Electric power circuits and electric equipment; deenergization. Power circuits and electric equipment shall be deenergized before work is done on...

30 CFR 77.500 - Electric power circuits and electric equipment; deenergization.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Electric power circuits and electric equipment... OF UNDERGROUND COAL MINES Electrical Equipment-General § 77.500 Electric power circuits and electric equipment; deenergization. Power circuits and electric equipment shall be deenergized before work is done on...

High current density sheet-like electron beam generator

NASA Astrophysics Data System (ADS)

Chow-Miller, Cora; Korevaar, Eric; Schuster, John

Sheet electron beams are very desirable for coupling to the evanescent waves in small millimeter wave slow-wave circuits to achieve higher powers. In particular, they are critical for operation of the free-electron-laser-like Orotron. The program was a systematic effort to establish a solid technology base for such a sheet-like electron emitter system that will facilitate the detailed studies of beam propagation stability. Specifically, the effort involved the design and test of a novel electron gun using Lanthanum hexaboride (LaB6) as the thermionic cathode material. Three sets of experiments were performed to measure beam propagation as a function of collector current, beam voltage, and heating power. The design demonstrated its reliability by delivering 386.5 hours of operation throughout the weeks of experimentation. In addition, the cathode survived two venting and pump down cycles without being poisoned or losing its emission characteristics. A current density of 10.7 A/sq cm. was measured while operating at 50 W of ohmic heating power. Preliminary results indicate that the nearby presence of a metal plate can stabilize the beam.

Power supply circuit for an ion engine sequentially operated power inverters

NASA Technical Reports Server (NTRS)

Cardwell, Jr., Gilbert I. (Inventor)

2000-01-01

A power supply circuit for an ion engine suitable for a spacecraft has a voltage bus having input line and a return line. The power supply circuit includes a pulse width modulation circuit. A plurality of bridge inverter circuits is coupled to the bus and the pulse width modulation circuit. The pulse width modulation circuit generates operating signals having a variable duty cycle. Each bridge inverter has a primary winding and a secondary winding. Each secondary winding is coupled to a rectifier bridge. Each secondary winding is coupled in series with another of the plurality of rectifier bridges.

An Electronics Course Emphasizing Circuit Design

ERIC Educational Resources Information Center

Bergeson, Haven E.

1975-01-01

Describes a one-quarter introductory electronics course in which the students use a variety of inexpensive integrated circuits to design and construct a large number of useful circuits. Presents the subject matter of the course in three parts: linear circuits, digital circuits, and more complex circuits. (GS)

Method and apparatus for pulse width modulation control of an AC induction motor

DOEpatents

Geppert, Steven; Slicker, James M.

1984-01-01

An inverter is connected between a source of DC power and a three-phase AC induction motor, and a micro-processor-based circuit controls the inverter using pulse width modulation techniques. In the disclosed method of pulse width modulation, both edges of each pulse of a carrier pulse train are equally modulated by a time proportional to sin .THETA., where .THETA. is the angular displacement of the pulse center at the motor stator frequency from a fixed reference point on the carrier waveform. The carrier waveform frequency is a multiple of the motor stator frequency. The modulated pulse train is then applied to each of the motor phase inputs with respective phase shifts of 120.degree. at the stator frequency. Switching control commands of electronic switches in the inverter are stored in a random access memory (RAM) and the locations of the RAM are successively read out in a cyclic manner, each bit of a given RAM location controlling a respective phase input of the motor. The DC power source preferably comprises rechargeable batteries and all but one of the electronic switches in the inverter can be disabled, the remaining electronic switch being part of a "flyback" DC-DC converter circuit for recharging the battery.

Analysis on electronic control unit of continuously variable transmission

NASA Astrophysics Data System (ADS)

Cao, Shuanggui

Continuously variable transmission system can ensure that the engine work along the line of best fuel economy, improve fuel economy, save fuel and reduce harmful gas emissions. At the same time, continuously variable transmission allows the vehicle speed is more smooth and improves the ride comfort. Although the CVT technology has made great development, but there are many shortcomings in the CVT. The CVT system of ordinary vehicles now is still low efficiency, poor starting performance, low transmission power, and is not ideal controlling, high cost and other issues. Therefore, many scholars began to study some new type of continuously variable transmission. The transmission system with electronic systems control can achieve automatic control of power transmission, give full play to the characteristics of the engine to achieve optimal control of powertrain, so the vehicle is always traveling around the best condition. Electronic control unit is composed of the core processor, input and output circuit module and other auxiliary circuit module. Input module collects and process many signals sent by sensor and , such as throttle angle, brake signals, engine speed signal, speed signal of input and output shaft of transmission, manual shift signals, mode selection signals, gear position signal and the speed ratio signal, so as to provide its corresponding processing for the controller core.

Method and apparatus for pulse width modulation control of an AC induction motor

NASA Technical Reports Server (NTRS)

Geppert, Steven (Inventor); Slicker, James M. (Inventor)

1984-01-01

An inverter is connected between a source of DC power and a three-phase AC induction motor, and a micro-processor-based circuit controls the inverter using pulse width modulation techniques. In the disclosed method of pulse width modulation, both edges of each pulse of a carrier pulse train are equally modulated by a time proportional to sin .THETA., where .THETA. is the angular displacement of the pulse center at the motor stator frequency from a fixed reference point on the carrier waveform. The carrier waveform frequency is a multiple of the motor stator frequency. The modulated pulse train is then applied to each of the motor phase inputs with respective phase shifts of 120.degree. at the stator frequency. Switching control commands of electronic switches in the inverter are stored in a random access memory (RAM) and the locations of the RAM are successively read out in a cyclic manner, each bit of a given RAM location controlling a respective phase input of the motor. The DC power source preferably comprises rechargeable batteries and all but one of the electronic switches in the inverter can be disabled, the remaining electronic switch being part of a flyback DC-DC converter circuit for recharging the battery.

Fabrication, characterization, and modeling of a biodegradable battery for transient electronics

NASA Astrophysics Data System (ADS)

Edupuganti, Vineet; Solanki, Raj

2016-12-01

Traditionally, emphasis has been placed on durable, long-lasting electronics. However, electronics that are meant to intentionally degrade over time can actually have significant practical applications. Biodegradable, or transient, electronics would open up opportunities in the field of medical implants, where the need for surgical removal of devices could be eliminated. Environmental sensors and, eventually, consumer electronics would also greatly benefit from this technology. An essential component of transient electronics is the battery, which serves as a biodegradable power source. This work involves the fabrication, characterization, and modeling of a magnesium-based biodegradable battery. Galvanostatic discharge tests show that an anode material of magnesium alloy AZ31 extends battery lifetime by over six times, as compared to pure magnesium. With AZ31, the maximum power and capacity of the fabricated device are 67 μW and 5.2 mAh, respectively, though the anode area is just 0.8 cm2. The development of an equivalent circuit model provided insight into the battery's behavior by extracting fitting parameters from experimental data. The model can accurately simulate device behavior, taking into account its intentional degradation. The size of the device and the power it produces are in accordance with typical levels for low-power transient systems.

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

NASA Technical Reports Server (NTRS)

1996-01-01

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

30 CFR 57.12017 - Work on power circuits.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Work on power circuits. 57.12017 Section 57... Surface and Underground § 57.12017 Work on power circuits. Power circuits shall be deenergized before work... the individuals who are to do the work. Switches shall be locked out or other measures taken which...

A 5 nW Quasi-Linear CMOS Hot-Electron Injector for Self-Powered Monitoring of Biomechanical Strain Variations.

PubMed

Zhou, Liang; Abraham, Adam C; Tang, Simon Y; Chakrabartty, Shantanu

2016-12-01

Piezoelectricity-driven hot-electron injectors (p-HEI) are used for self-powered monitoring of mechanical activity in biomechanical implants and structures. Previously reported p-HEI devices operate by harvesting energy from a piezoelectric transducer to generate current and voltage references which are then used for initiating and controlling the process of hot-electron injection. As a result, the minimum energy required to activate the device is limited by the power requirements of the reference circuits. In this paper we present a p-HEI device that operates by directly exploiting the self-limiting capability of an energy transducer when driving the process of hot-electron injection in a pMOS floating-gate transistor. As a result, the p-HEI device can activate itself at input power levels less than 5 nW. Using a prototype fabricated in a 0.5- [Formula: see text] bulk CMOS process we validate the functionality of the proposed injector and show that for a fixed input power, its dynamics is quasi-linear with respect to time. The paper also presents measurement results using a cadaver phantom where the fabricated p-HEI device has been integrated with a piezoelectric transducer and is used for self-powered monitoring of mechanical activity.

Two color interferometric electron density measurement in an axially blown arc

NASA Astrophysics Data System (ADS)

Stoller, Patrick; Carstensen, Jan; Galletti, Bernardo; Doiron, Charles; Sokolov, Alexey; Salzmann, René; Simon, Sandor; Jabs, Philipp

2016-09-01

High voltage circuit breakers protect the power grid by interrupting the current in case of a short circuit. To do so an arc is ignited between two contacts as they separate; transonic gas flow is used to cool and ultimately extinguish the arc at a current-zero crossing of the alternating current. A detailed understanding of the arc interruption process is needed to improve circuit breaker design. The conductivity of the partially ionized gas remaining after the current-zero crossing, a key parameter in determining whether the arc will be interrupted or not, is a function of the electron density. The electron density, in turn, is a function of the detailed dynamics of the arc cooling process, which does not necessarily occur under local thermodynamic equilibrium (LTE) conditions. In this work, we measure the spatially resolved line-integrated index of refraction in a near-current-zero arc stabilized in an axial flow of synthetic air with two nanosecond pulsed lasers at wavelengths of 532 nm and 671 nm. Generating a stable, cylindrically symmetric arc enables us to determine the three-dimensional index of refraction distribution using Abel inversion. Due to the wavelength dependence of the component of the index of refraction related to the free electrons, the information at two different wavelengths can be used to determine the electron density. This information allows us to determine how important it is to take into account non-equilibrium effects for accurate modeling of the physics of decaying arcs.

A fully integrated oven controlled microelectromechanical oscillator -- Part I. Design and fabrication

DOE PAGES

Wojciechowski, Kenneth E.; Baker, Michael S.; Clews, Peggy J.; ...

2015-06-24

Our paper reports the design and fabrication of a fully integrated oven controlled microelectromechanical oscillator (OCMO). This paper begins by describing the limits on oscillator frequency stability imposed by the thermal drift and electronic properties (Q, resistance) of both the resonant tank circuit and feedback electronics required to form an electronic oscillator. An OCMO is presented that takes advantage of high thermal isolation and monolithic integration of both micromechanical resonators and electronic circuitry to thermally stabilize or ovenize all the components that comprise an oscillator. This was achieved by developing a processing technique where both silicon-on-insulator complementary metal-oxide-semiconductor (CMOS) circuitrymore » and piezoelectric aluminum nitride, AlN, micromechanical resonators are placed on a suspended platform within a standard CMOS integrated circuit. Operation at microscale sizes achieves high thermal resistances (~10 °C/mW), and hence thermal stabilization of the oscillators at very low-power levels when compared with the state-of-the-art ovenized crystal oscillators, OCXO. This constant resistance feedback circuit is presented that incorporates on platform resistive heaters and temperature sensors to both measure and stabilize the platform temperature. Moreover, the limits on temperature stability of the OCMO platform and oscillator frequency imposed by the gain of the constant resistance feedback loop, placement of the heater and temperature sensing resistors, as well as platform radiative and convective heat losses are investigated.« less

Controlled conjugated backbone twisting for an increased open-circuit voltage while having a high short-circuit current in poly(hexylthiophene) derivatives.

PubMed

Ko, Sangwon; Hoke, Eric T; Pandey, Laxman; Hong, Sanghyun; Mondal, Rajib; Risko, Chad; Yi, Yuanping; Noriega, Rodrigo; McGehee, Michael D; Brédas, Jean-Luc; Salleo, Alberto; Bao, Zhenan

2012-03-21

Conjugated polymers with nearly planar backbones have been the most commonly investigated materials for organic-based electronic devices. More twisted polymer backbones have been shown to achieve larger open-circuit voltages in solar cells, though with decreased short-circuit current densities. We systematically impose twists within a family of poly(hexylthiophene)s and examine their influence on the performance of polymer:fullerene bulk heterojunction (BHJ) solar cells. A simple chemical modification concerning the number and placement of alkyl side chains along the conjugated backbone is used to control the degree of backbone twisting. Density functional theory calculations were carried out on a series of oligothiophene structures to provide insights on how the sterically induced twisting influences the geometric, electronic, and optical properties. Grazing incidence X-ray scattering measurements were performed to investigate how the thin-film packing structure was affected. The open-circuit voltage and charge-transfer state energy of the polymer:fullerene BHJ solar cells increased substantially with the degree of twist induced within the conjugated backbone--due to an increase in the polymer ionization potential--while the short-circuit current decreased as a result of a larger optical gap and lower hole mobility. A controlled, moderate degree of twist along the poly(3,4-dihexyl-2,2':5',2''-terthiophene) (PDHTT) conjugated backbone led to a 19% enhancement in the open-circuit voltage (0.735 V) vs poly(3-hexylthiophene)-based devices, while similar short-circuit current densities, fill factors, and hole-carrier mobilities were maintained. These factors resulted in a power conversion efficiency of 4.2% for a PDHTT:[6,6]-phenyl-C(71)-butyric acid methyl ester (PC(71)BM) blend solar cell without thermal annealing. This simple approach reveals a molecular design avenue to increase open-circuit voltage while retaining the short-circuit current.

Soft switching circuit to improve efficiency of all solid-state Marx modulator for DBDs

NASA Astrophysics Data System (ADS)

Liqing, TONG; Kefu, LIU; Yonggang, WANG

2018-02-01

For an all solid-state Marx modulator applied in dielectric barrier discharges (DBDs), hard switching results in a very low efficiency. In this paper, a series resonant soft switching circuit, which series an inductance with DBD capacitor, is proposed to reduce the power loss. The power loss of the all circuit status with hard switching was analyzed, and the maximum power loss occurred during discharging at the rising and falling edges. The power loss of the series resonant soft switching circuit was also presented. A comparative analysis of the two circuits determined that the soft switching circuit greatly reduced power loss. The experimental results also demonstrated that the soft switching circuit improved the power transmission efficiency of an all solid-state Marx modulator for DBDs by up to 3 times.

Noncontact power/interrogation system for smart structures

NASA Astrophysics Data System (ADS)

Spillman, William B., Jr.; Durkee, S.

1994-05-01

The field of smart structures has been largely driven by the development of new high performance designed materials. Use of these materials has been generally limited due to the fact that they have not been in use long enough for statistical data bases to be developed on their failure modes. Real time health monitoring is therefore required for the benefits of structures using these materials to be realized. In this paper a non-contact method of powering and interrogating embedded electronic and opto-electronic systems is described. The technique utilizes inductive coupling between external and embedded coils etched on thin electronic circuit cards. The technique can be utilized to interrogate embedded sensors and to provide > 250 mW for embedded electronics. The system has been successfully demonstrated with a number of composite and plastic materials through material thicknesses up to 1 cm. An analytical description of the system is provided along with experimental results.

High-Efficiency Nonfullerene Polymer Solar Cell Enabling by Integration of Film-Morphology Optimization, Donor Selection, and Interfacial Engineering.

PubMed

Zhang, Xin; Li, Weiping; Yao, Jiannian; Zhan, Chuanlang

2016-06-22

Carrier mobility is a vital factor determining the electrical performance of organic solar cells. In this paper we report that a high-efficiency nonfullerene organic solar cell (NF-OSC) with a power conversion efficiency of 6.94 ± 0.27% was obtained by optimizing the hole and electron transportations via following judicious selection of polymer donor and engineering of film-morphology and cathode interlayers: (1) a combination of solvent annealing and solvent vapor annealing optimizes the film morphology and hence both hole and electron mobilities, leading to a trade-off of fill factor and short-circuit current density (Jsc); (2) the judicious selection of polymer donor affords a higher hole and electron mobility, giving a higher Jsc; and (3) engineering the cathode interlayer affords a higher electron mobility, which leads to a significant increase in electrical current generation and ultimately the power conversion efficiency (PCE).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bacon, L. D.

Hybrid Band{trademark} (H-band) is a Lockheed Martin Missiles and Fire Control (LMMFC) designation for a specific RF modulation that causes disruption of select electronic components and circuits. H-Band enables conventional high-power microwave (HPM) effects (with a center frequency of 1 to 2 GHz, for example) using a higher frequency carrier signal. The primary technical objective of this project was to understand the fundamental physics of Hybrid Band{trademark} Radio Frequency effects on electronic systems. The follow-on objective was to develop and validate a Hybrid Band{trademark} effects analysis process.

Advanced Power Electronics Components

NASA Technical Reports Server (NTRS)

Schwarze, Gene E.

2004-01-01

This paper will give a description and status of the Advanced Power Electronics Materials and Components Technology program being conducted by the NASA Glenn Research Center for future aerospace power applications. The focus of this research program is on the following: 1) New and/or significantly improved dielectric materials for the development of power capacitors with increased volumetric efficiency, energy density, and operating temperature. Materials being investigated include nanocrystalline and composite ceramic dielectrics and diamond-like carbon films; 2) New and/or significantly improved high frequency, high temperature, low loss soft magnetic materials for the development of transformers/inductors with increased power/energy density, electrical efficiency, and operating temperature. Materials being investigated include nanocrystalline and nanocomposite soft magnetic materials; 3) Packaged high temperature, high power density, high voltage, and low loss SiC diodes and switches. Development of high quality 4H- and 6H- SiC atomically smooth substrates to significantly improve device performance is a major emphasis of the SiC materials program; 4) Demonstration of high temperature (> 200 C) circuits using the components developed above.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lai, Jih-Sheng

This paper introduces control system design based softwares, SIMNON and MATLAB/SIMULINK, for power electronics system simulation. A complete power electronics system typically consists of a rectifier bridge along with its smoothing capacitor, an inverter, and a motor. The system components, featuring discrete or continuous, linear or nonlinear, are modeled in mathematical equations. Inverter control methods,such as pulse-width-modulation and hysteresis current control, are expressed in either computer algorithms or digital circuits. After describing component models and control methods, computer programs are then developed for complete systems simulation. Simulation results are mainly used for studying system performances, such as input and outputmore » current harmonics, torque ripples, and speed responses. Key computer programs and simulation results are demonstrated for educational purposes.« less

Enhancement of ethanol-oxygen biofuel cell output using a CNT based nano-composite as bioanode.

PubMed

Gouranlou, Farideh; Ghourchian, Hedayatollah

2016-04-15

The present research, describes preparation and application of a novel bioanode for ethanol-oxygen biofuel cells. We applied an enzyme based nanocomposite consisting of polymethylene green as electron transfer mediator, carboxylated-multiwall carbon nanotubes as electron transfer accelerator, alcohol dehydrogenase as biocatalyst and polydiallyldimethylammonium chloride as supporting agent. In the presence of β-nicotinamide adenine dinucleotide as cofactor, and ethanol as fuel, the feasibility of the bioanode for increasing the power was evaluated under the ambient conditions. In the optimum conditions the biofuel cell produced the power density of 1.713 mW cm(-2) and open circuit voltage of 0.281 V. Copyright © 2015 Elsevier B.V. All rights reserved.

New method for designing serial resonant power converters

NASA Astrophysics Data System (ADS)

Hinov, Nikolay

2017-12-01

In current work is presented one comprehensive method for design of serial resonant energy converters. The method is based on new simplified approach in analysis of such kind power electronic devices. It is grounded on supposing resonant mode of operation when finding relation between input and output voltage regardless of other operational modes (when controlling frequency is below or above resonant frequency). This approach is named `quasiresonant method of analysis', because it is based on assuming that all operational modes are `sort of' resonant modes. An estimation of error was made because of the a.m. hypothesis and is compared to the classic analysis. The `quasiresonant method' of analysis gains two main advantages: speed and easiness in designing of presented power circuits. Hence it is very useful in practice and in teaching Power Electronics. Its applicability is proven with mathematic modelling and computer simulation.

46 CFR 169.672 - Wiring for power and lighting circuits.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 7 2013-10-01 2013-10-01 false Wiring for power and lighting circuits. 169.672 Section... Volts on Vessels of Less Than 100 Gross Tons § 169.672 Wiring for power and lighting circuits. (a) Wiring for power and lighting circuits must have copper conductors, of 14 AWG or larger, and— (1) Meet...

46 CFR 169.672 - Wiring for power and lighting circuits.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 7 2014-10-01 2014-10-01 false Wiring for power and lighting circuits. 169.672 Section... Volts on Vessels of Less Than 100 Gross Tons § 169.672 Wiring for power and lighting circuits. (a) Wiring for power and lighting circuits must have copper conductors, of 14 AWG or larger, and— (1) Meet...

180-GHz I-Q Second Harmonic Resistive Mixer MMIC

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka P.; Lai, Richard; Mei, Xiaobing

2010-01-01

An indium phosphide MMIC (monolithic microwave integrated circuit) mixer was developed, processed, and tested in the NGC 35-nm-gate-length HEMT (high electron mobility transistor) process. This innovation is very compact in size and operates with very low LO power. Because it is a resistive mixer, this innovation does not require DC power. This is an enabling technology for the miniature receiver modules for the GeoSTAR instrument, which is the only viable option for the NRC decadal study mission PATH.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Chao; Santhanagopalan, Shriram; Sprague, Michael A.

Lithium-ion batteries are currently the state-of-the-art power sources for a variety of applications, from consumer electronic devices to electric-drive vehicles (EDVs). Being an energized component, failure of the battery is an essential concern, which can result in rupture, smoke, fire, or venting. The failure of Lithium-ion batteries can be due to a number of external abusive conditions (impact/crush, overcharge, thermal ramp, etc.) or internal conditions (internal short circuits, excessive heating due to resistance build-up, etc.), of which the mechanical-abuse-induced short circuit is a very practical problem. In order to better understand the behavior of Lithium-ion batteries under mechanical abuse, amore » coupled modeling methodology encompassing the mechanical, thermal and electrical response has been developed for predicting short circuit under external crush.« less

A front-end electronic system for large arrays of bolometers

NASA Astrophysics Data System (ADS)

Arnaboldi, C.; Carniti, P.; Cassina, L.; Gotti, C.; Liu, X.; Maino, M.; Pessina, G.; Rosenfeld, C.; Zhu, B. X.

2018-02-01

CUORE is an array of thermal calorimeters composed of 988 crystals held at about 10 mK, whose absorbed energy is read out with semiconductor thermistors. The composition of the crystal is TeO2, and the aim is the study of the double beta decay of 130Te on very long and stable runs. CUPID-0 is an array of 26 Zn82Se crystals with double thermistor readout to study the double beta decay of 82Se. In the present paper, we present an overview of the entire front-end electronic readout chain, from the preamplifier to the anti-aliasing filter. This overview includes motivations, design strategies, circuit implementation and performance results of the electronic system, including other auxiliary yet important elements like power supplies and the slow control communication system. The stringent requirements of stability on the very long experimental runs that are foreseen during CUORE and CUPID-0 operation, are achieved thanks to novel solutions of the front-end preamplifier and of the detector bias circuit setup.

Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor

NASA Astrophysics Data System (ADS)

Curry, M. J.; England, T. D.; Bishop, N. C.; Ten-Eyck, G.; Wendt, J. R.; Pluym, T.; Lilly, M. P.; Carr, S. M.; Carroll, M. S.

2015-05-01

We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10-100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.

Silicon-On-Insulator (SOI) Devices and Mixed-Signal Circuits for Extreme Temperature Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Electronic systems in planetary exploration missions and in aerospace applications are expected to encounter extreme temperatures and wide thermal swings in their operational environments. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of the missions. Electronic parts based on silicon-on-insulator (SOI) technology are known, based on device structure, to provide faster switching, consume less power, and offer better radiation-tolerance compared to their silicon counterparts. They also exhibit reduced current leakage and are often tailored for high temperature operation. However, little is known about their performance at low temperature. The performance of several SOI devices and mixed-signal circuits was determined under extreme temperatures, cold-restart, and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these devices for use in space exploration missions under extreme temperatures. The experimental results obtained on selected SOI devices are presented and discussed in this paper.

TiO2-ZnS Cascade Electron Transport Layer for Efficient Formamidinium Tin Iodide Perovskite Solar Cells.

PubMed

Ke, Weijun; Stoumpos, Constantinos C; Logsdon, Jenna Leigh; Wasielewski, Michael R; Yan, Yanfa; Fang, Guojia; Kanatzidis, Mercouri G

2016-11-16

Achieving high open-circuit voltage (V oc ) for tin-based perovskite solar cells is challenging. Here, we demonstrate that a ZnS interfacial layer can improve the V oc and photovoltaic performance of formamidinium tin iodide (FASnI 3 ) perovskite solar cells. The TiO 2 -ZnS electron transporting layer (ETL) with cascade conduction band structure can effectively reduce the interfacial charge recombination and facilitate electron transfer. Our best-performing FASnI 3 perovskite solar cell using the cascaded TiO 2 -ZnS ETL has achieved a power conversion efficiency of 5.27%, with a higher V oc of 0.380 V, a short-circuit current density of 23.09 mA cm -2 , and a fill factor of 60.01%. The cascade structure is further validated with a TiO 2 -CdS ETL. Our results suggest a new approach for further improving the performance of tin-based perovskite solar cells with a higher V oc .

Stretchable polymer-based electronic device

DOEpatents

Maghribi, Mariam N [Livermore, CA; Krulevitch, Peter A [Pleasanton, CA; Davidson, James Courtney [Livermore, CA; Wilson, Thomas S [Castro Valley, CA; Hamilton, Julie K [Tracy, CA; Benett, William J [Livermore, CA; Tovar, Armando R [San Antonio, TX

2008-02-26

A stretchable electronic circuit or electronic device and a polymer-based process to produce a circuit or electronic device containing a stretchable conducting circuit. The stretchable electronic apparatus has a central longitudinal axis and the apparatus is stretchable in a longitudinal direction generally aligned with the central longitudinal axis. The apparatus comprises a stretchable polymer body and at least one circuit line operatively connected to the stretchable polymer body. The circuit line extends in the longitudinal direction and has a longitudinal component that extends in the longitudinal direction and has an offset component that is at an angle to the longitudinal direction. The longitudinal component and the offset component allow the apparatus to stretch in the longitudinal direction while maintaining the integrity of the circuit line.

The Circuit Theory Behind Coupled-Mode Magnetic Resonance-Based Wireless Power Transmission.

PubMed

Kiani, Mehdi; Ghovanloo, Maysam

2012-09-01

Inductive coupling is a viable scheme to wirelessly energize devices with a wide range of power requirements from nanowatts in radio frequency identification tags to milliwatts in implantable microelectronic devices, watts in mobile electronics, and kilowatts in electric cars. Several analytical methods for estimating the power transfer efficiency (PTE) across inductive power transmission links have been devised based on circuit and electromagnetic theories by electrical engineers and physicists, respectively. However, a direct side-by-side comparison between these two approaches is lacking. Here, we have analyzed the PTE of a pair of capacitively loaded inductors via reflected load theory (RLT) and compared it with a method known as coupled-mode theory (CMT). We have also derived PTE equations for multiple capacitively loaded inductors based on both RLT and CMT. We have proven that both methods basically result in the same set of equations in steady state and either method can be applied for short- or midrange coupling conditions. We have verified the accuracy of both methods through measurements, and also analyzed the transient response of a pair of capacitively loaded inductors. Our analysis shows that the CMT is only applicable to coils with high quality factor ( Q ) and large coupling distance. It simplifies the analysis by reducing the order of the differential equations by half compared to the circuit theory.

The Circuit Theory Behind Coupled-Mode Magnetic Resonance-Based Wireless Power Transmission

PubMed Central

Kiani, Mehdi; Ghovanloo, Maysam

2014-01-01

Inductive coupling is a viable scheme to wirelessly energize devices with a wide range of power requirements from nanowatts in radio frequency identification tags to milliwatts in implantable microelectronic devices, watts in mobile electronics, and kilowatts in electric cars. Several analytical methods for estimating the power transfer efficiency (PTE) across inductive power transmission links have been devised based on circuit and electromagnetic theories by electrical engineers and physicists, respectively. However, a direct side-by-side comparison between these two approaches is lacking. Here, we have analyzed the PTE of a pair of capacitively loaded inductors via reflected load theory (RLT) and compared it with a method known as coupled-mode theory (CMT). We have also derived PTE equations for multiple capacitively loaded inductors based on both RLT and CMT. We have proven that both methods basically result in the same set of equations in steady state and either method can be applied for short- or midrange coupling conditions. We have verified the accuracy of both methods through measurements, and also analyzed the transient response of a pair of capacitively loaded inductors. Our analysis shows that the CMT is only applicable to coils with high quality factor (Q) and large coupling distance. It simplifies the analysis by reducing the order of the differential equations by half compared to the circuit theory. PMID:24683368

Thermoelectronic laser energy conversion for power transmission in space

NASA Technical Reports Server (NTRS)

Britt, E. J.; Yuen, C.

1977-01-01

Long distance transmission of power in space by means of laser beams is an attractive concept because of the very narrow beam divergence. Such a system requires efficient means to both generate the laser beam and to convert the light energy in the beam into useful electric output at the receiver. A plasma-type device known as a Thermo-Electronic Laser Energy Converter (TELEC) has been studied as a method of converting a 10.6 micron CO2 laser beam into electric power. In the TELEC process, electromagnetic radiation is absorbed directly in the plasma electrons producing a high electron temperature. The energetic electrons diffuse out of the plasma striking two electrodes with different areas. Since more electrons are collected by the larger electrode there is a net transport of current, and an EMF is generated in the external circuit. The smaller electrode functions as an electron emitter to provide continuity of the current. Waste heat is rejected from the large electrode. A design for a TELEC system with an input 1 MW laser beam was developed as part of the study. The calculated performance of the system showed an overall efficiency of about 42%.

A combined source of electron bunches and microwave power

NASA Astrophysics Data System (ADS)

Xie, J. L.; Wang, F. Y.; Yang, X. P.; Shen, B.; Gu, W.; Zhang, L. W.

2003-12-01

In this article, the possibility of using a high power klystron amplifier simultaneously as a microwave power source as usual and an electron bunches source by extracting the spent beam with a magnet and also as an oscillator by feedback is investigated. The purpose of this study is to demonstrate the feasibility of constructing a very compact electron linear accelerator or for other applications of electron bunches. The feasibility of the idea was first examined by computer simulation of the electron motion in a 5 MW klystron and the characteristics of the klystron spent beam. Experimental study was then carried out by installing a radio frequency cavity and a Faraday cage in sequence at the exit end of a bending magnet located at the top of the klystron collector. The energy and current of the chopped spent electron beam can then be measured. By properly choosing the feedback circuit elements, the frequency stability of the klystron in oscillator mode was proved to be good enough for linac operation. According to the results presented in this article, it is evident that an extremely compact linac for research and education with better affordability can be constructed to promote the applications of linacs.

Quantum-Circuit Refrigerator

NASA Astrophysics Data System (ADS)

MöTtöNen, Mikko; Tan, Kuan Y.; Masuda, Shumpei; Partanen, Matti; Lake, Russell E.; Govenius, Joonas; Silveri, Matti; Grabert, Hermann

Quantum technology holds great potential in providing revolutionizing practical applications. However, fast and precise cooling of the functional quantum degrees of freedom on demand remains a major challenge in many solid-state implementations, such as superconducting circuits. We demonstrate direct cooling of a superconducting resonator mode using voltage-controllable quantum tunneling of electrons in a nanoscale refrigerator. In our first experiments on this type of a quantum-circuit refrigerator, we measure the drop in the mode temperature by electron thermometry at a resistor which is coupled to the resonator mode through ohmic losses. To eliminate unwanted dissipation, we remove the probe resistor and directly observe the power spectrum of the resonator output in agreement with the so-called P(E) theory. We also demonstrate in microwave reflection experiments that the internal quality factor of the resonator can be tuned by orders of magnitude. In the future, our refrigerator can be integrated with different quantum electric devices, potentially enhancing their performance. For example, it may prove useful in the initialization of superconducting quantum bits and in dissipation-assisted quantum annealing. We acknowledge European Research Council Grant SINGLEOUT (278117) and QUESS (681311) for funding.

The present situation and forecasts of semiconductor elements performance within the microwave range, 1970-1985

NASA Technical Reports Server (NTRS)

Peterson, B.

1978-01-01

The present situation and possible developments over the period 1970-1985 for active semiconductor elements in the microwave range are outlined. After a short historical survey of FT techniques, the following are discussed: Generation, power amplification, amplification of small signals, frequency conversion, detection, electronic signal control and integrated microwave circuits.

Self-similar and fractal design for stretchable electronics

DOEpatents

Rogers, John A.; Fan, Jonathan; Yeo, Woon-Hong; Su, Yewang; Huang, Yonggang; Zhang, Yihui

2017-04-04

The present invention provides electronic circuits, devices and device components including one or more stretchable components, such as stretchable electrical interconnects, electrodes and/or semiconductor components. Stretchability of some of the present systems is achieved via a materials level integration of stretchable metallic or semiconducting structures with soft, elastomeric materials in a configuration allowing for elastic deformations to occur in a repeatable and well-defined way. The stretchable device geometries and hard-soft materials integration approaches of the invention provide a combination of advance electronic function and compliant mechanics supporting a broad range of device applications including sensing, actuation, power storage and communications.

Flexible one-structure arched triboelectric nanogenerator based on common electrode for high efficiency energy harvesting and self-powered motion sensing

NASA Astrophysics Data System (ADS)

Chen, Xi; He, Jian; Song, Linlin; Zhang, Zengxing; Tian, Zhumei; Wen, Tao; Zhai, Cong; Chen, Yi; Cho, Jundong; Chou, Xiujian; Xue, Chenyang

2018-04-01

Triboelectric nanogenerators are widely used because of low cost, simple manufacturing process and high output performance. In this work, a flexible one-structure arched triboelectric nanogenerator (FOAT), based on common electrode to combine the single-electrode mode and contact-separation, was designed using silicone rubber, epoxy resin and flexible electrode. The peak-to-peak short circuit current of 18μ A and the peak-to-peak open circuit voltage of 570V can be obtained from the FOAT with the size of 5×7 cm2 under the frequency of 3Hz and the pressure of 300N. The peak-to-peak short circuit current of FOAT is increased by 29% and 80%, and the peak-to-peak open circuit voltage is increased by 33% and 54% compared with single-electrode mode and contact-separation mode, respectively. FOAT realizes the combination of two generation modes, which improves the output performance of triboelectric nanogenerator (TENG). 62 light-emitting-diodes (LEDs) can be completely lit up and 2.2μ F capacitor can be easily charged to 1.2V in 9s. When the FOAT is placed at different parts of the human body, the human motion energy can be harvested and be the sensing signal for motion monitoring sensor. Based on the above characteristics, FOAT exhibits great potential in illumination, power supplies for wearable electronic devices and self-powered motion monitoring sensor via harvesting the energy of human motion.

Onboard calibration circuit for the DAMPE BGO calorimeter front-end electronics

NASA Astrophysics Data System (ADS)

Zhang, De-Liang; Feng, Chang-Qing; Zhang, Jun-Bin; Wang, Qi; Ma, Si-Yuan; Shen, Zhong-Tao; Jiang, Di; Gao, Shan-Shan; Zhang, Yun-Long; Guo, Jian-Hua; Liu, Shu-Bin; An, Qi

2016-05-01

DAMPE (DArk Matter Particle Explorer) is a scientific satellite which is mainly aimed at indirectly searching for dark matter in space. One critical sub-detector of the DAMPE payload is the BGO (bismuth germanium oxide) calorimeter, which contains 1848 PMT (photomultiplier tube) dynodes and 16 FEE (Front-End Electronics) boards. VA160 and VATA160, two 32-channel low power ASICs (Application Specific Integrated Circuits), are adopted as the key components on the FEEs to perform charge measurement for the PMT signals. In order to monitor the parameter drift which may be caused by temperature variation, aging, or other environmental factors, an onboard calibration circuit is designed for the VA160 and VATA160 ASICs. It is mainly composed of a 12-bit DAC (Digital to Analog Converter), an operational amplifier and an analog switch. Test results showed that a dynamic range of 0-30 pC with a precision of 5 fC (Root Meam Square, RMS) was achieved, which covers the VA160’s input range. It can be used to compensate for the temperature drift and test the trigger function of the FEEs. The calibration circuit has been implemented for the front-end electronics of the BGO Calorimeter and verified by all the environmental tests for both Qualification Model and Flight Model of DAMPE. The DAMPE satellite was launched at the end of 2015 and the calibration circuit will operate periodically in space. Supported by Strategic Priority Research Program on Space Science of Chinese Academy of Sciences (XDA04040202-4), and National Basic Research Program (973 Program) of China (2010CB833002) and National Natural Science Foundation of China (11273070)

Overload protection system for power inverter

NASA Technical Reports Server (NTRS)

Nagano, S. (Inventor)

1977-01-01

An overload protection system for a power inverter utilized a first circuit for monitoring current to the load from the power inverter to detect an overload and a control circuit to shut off the power inverter, when an overload condition was detected. At the same time, a monitoring current inverter was turned on to deliver current to the load at a very low power level. A second circuit monitored current to the load, from the monitoring current inverter, to hold the power inverter off through the control circuit, until the overload condition was cleared so that the control circuit may be deactivated in order for the power inverter to be restored after the monitoring current inverter is turned off completely.

Foldable graphene electronic circuits based on paper substrates.

PubMed

Hyun, Woo Jin; Park, O Ok; Chin, Byung Doo

2013-09-14

Graphene electronic circuits are prepared on paper substrates by using graphene nanoplates and applied to foldable paper-based electronics. The graphene circuits show a small change in conductance under various folding angles and maintain an electronic path on paper substrates after repetition of folding and unfolding. Foldable paper-based applications with graphene circuits exhibit excellent folding stability. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits

NASA Astrophysics Data System (ADS)

Sporea, R. A.; Trainor, M. J.; Young, N. D.; Shannon, J. M.; Silva, S. R. P.

2014-03-01

Ultra-large-scale integrated (ULSI) circuits have benefited from successive refinements in device architecture for enormous improvements in speed, power efficiency and areal density. In large-area electronics (LAE), however, the basic building-block, the thin-film field-effect transistor (TFT) has largely remained static. Now, a device concept with fundamentally different operation, the source-gated transistor (SGT) opens the possibility of unprecedented functionality in future low-cost LAE. With its simple structure and operational characteristics of low saturation voltage, stability under electrical stress and large intrinsic gain, the SGT is ideally suited for LAE analog applications. Here, we show using measurements on polysilicon devices that these characteristics lead to substantial improvements in gain, noise margin, power-delay product and overall circuit robustness in digital SGT-based designs. These findings have far-reaching consequences, as LAE will form the technological basis for a variety of future developments in the biomedical, civil engineering, remote sensing, artificial skin areas, as well as wearable and ubiquitous computing, or lightweight applications for space exploration.

A memristor-based nonvolatile latch circuit

NASA Astrophysics Data System (ADS)

Robinett, Warren; Pickett, Matthew; Borghetti, Julien; Xia, Qiangfei; Snider, Gregory S.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley

2010-06-01

Memristive devices, which exhibit a dynamical conductance state that depends on the excitation history, can be used as nonvolatile memory elements by storing information as different conductance states. We describe the implementation of a nonvolatile synchronous flip-flop circuit that uses a nanoscale memristive device as the nonvolatile memory element. Controlled testing of the circuit demonstrated successful state storage and restoration, with an error rate of 0.1%, during 1000 power loss events. These results indicate that integration of digital logic devices and memristors could open the way for nonvolatile computation with applications in small platforms that rely on intermittent power sources. This demonstrated feasibility of tight integration of memristors with CMOS (complementary metal-oxide-semiconductor) circuitry challenges the traditional memory hierarchy, in which nonvolatile memory is only available as a large, slow, monolithic block at the bottom of the hierarchy. In contrast, the nonvolatile, memristor-based memory cell can be fast, fine-grained and small, and is compatible with conventional CMOS electronics. This threatens to upset the traditional memory hierarchy, and may open up new architectural possibilities beyond it.

Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits

PubMed Central

Sporea, R. A.; Trainor, M. J.; Young, N. D.; Shannon, J. M.; Silva, S. R. P.

2014-01-01

Ultra-large-scale integrated (ULSI) circuits have benefited from successive refinements in device architecture for enormous improvements in speed, power efficiency and areal density. In large-area electronics (LAE), however, the basic building-block, the thin-film field-effect transistor (TFT) has largely remained static. Now, a device concept with fundamentally different operation, the source-gated transistor (SGT) opens the possibility of unprecedented functionality in future low-cost LAE. With its simple structure and operational characteristics of low saturation voltage, stability under electrical stress and large intrinsic gain, the SGT is ideally suited for LAE analog applications. Here, we show using measurements on polysilicon devices that these characteristics lead to substantial improvements in gain, noise margin, power-delay product and overall circuit robustness in digital SGT-based designs. These findings have far-reaching consequences, as LAE will form the technological basis for a variety of future developments in the biomedical, civil engineering, remote sensing, artificial skin areas, as well as wearable and ubiquitous computing, or lightweight applications for space exploration. PMID:24599023

Behaviour of one-step spray-coated carbon nanotube supercapacitor in ambient light harvester circuit with printed organic solar cell and electrochromic display

PubMed Central

Tuukkanen, Sampo; Välimäki, Marja; Lehtimäki, Suvi; Vuorinen, Tiina; Lupo, Donald

2016-01-01

A printed energy harvesting and storage circuit powered by ambient office lighting and its use to power a printed display is reported. The autonomous device is composed of three printed electronic components: an organic photovoltaic module, a carbon-nanotubes-only supercapacitor and an electrochromic display element. Components are fabricated from safe and environmentally friendly materials, and have been fabricated using solution processing methods, which translate into low-cost and high-throughput manufacturing. A supercapacitor made of spray-coated carbon nanotube based ink and aqueous NaCl electrolyte was charged using a printed organic photovoltaic module exposed to office lighting conditions. The supercapacitor charging rate, self-discharge rate and display operation were studied in detail. The supercapacitor self-discharge rate was found to depend on the charging rate. The fully charged supercapacitor was used as a power source to run the electrochromic display over 50 times. PMID:26957019

Analysis of epitaxial drift field N on P silicon solar cells

NASA Technical Reports Server (NTRS)

Baraona, C. R.; Brandhorst, H. W., Jr.

1976-01-01

The performance of epitaxial drift field silicon solar cell structures having a variety of impurity profiles was calculated. These structures consist of a uniformly doped P-type substrate layer, and a P-type epitaxial drift field layer with a variety of field strengths. Several N-layer structures were modeled. A four layer solar cell model was used to calculate efficiency, open circuit voltage and short circuit current. The effect on performance of layer thickness, doping level, and diffusion length was determined. The results show that peak initial efficiency of 18.1% occurs for a drift field thickness of about 30 micron with the doping rising from 10 to the 17th power atoms/cu cm at the edge of the depletion region to 10 to the 18th power atoms/cu cm in the substrate. Stronger drift fields (narrow field regions) allowed very high performance (17% efficiency) even after irradiation to 3x10 to the 14th power 1 MeV electrons/sq cm.

A miniaturized neuroprosthesis suitable for implantation into the brain

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad; Binkley, David; Blalock, Benjamin; Andersen, Richard; Ulshoefer, Norbert; Johnson, Travis; Del Castillo, Linda

2003-01-01

This paper presents current research on a miniaturized neuroprosthesis suitable for implantation into the brain. The prosthesis is a heterogeneous integration of a 100-element microelectromechanical system (MEMS) electrode array, front-end complementary metal-oxide-semiconductor (CMOS) integrated circuit for neural signal preamplification, filtering, multiplexing and analog-to-digital conversion, and a second CMOS integrated circuit for wireless transmission of neural data and conditioning of wireless power. The prosthesis is intended for applications where neural signals are processed and decoded to permit the control of artificial or paralyzed limbs. This research, if successful, will allow implantation of the electronics into the brain, or subcutaneously on the skull, and eliminate all external signal and power wiring. The neuroprosthetic system design has strict size and power constraints with each of the front-end preamplifier channels fitting within the 400 x 400-microm pitch of the 100-element MEMS electrode array and power dissipation resulting in less than a 1 degree C temperature rise for the surrounding brain tissue. We describe the measured performance of initial micropower low-noise CMOS preamplifiers for the neuroprosthetic.

Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.

PubMed

Das, Tanmoy; Chen, Xiang; Jang, Houk; Oh, Il-Kwon; Kim, Hyungjun; Ahn, Jong-Hyun

2016-11-01

2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal-oxide-semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS 2 n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

SiC Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Silicon Carbide Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2006-01-01

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Laser patterning of highly conductive flexible circuits

NASA Astrophysics Data System (ADS)

Ji, Seok Young; Muhammed Ajmal, C.; Kim, Taehun; Chang, Won Seok; Baik, Seunghyun

2017-04-01

There has been considerable attention paid to highly conductive flexible adhesive (CFA) materials as electrodes and interconnectors for future flexible electronic devices. However, the patterning technology still needs to be developed to construct micro-scale electrodes and circuits. Here we developed the selective laser sintering technology where the pattering and curing were accomplished simultaneously without making additional masks. The CFA was composed of micro-scale Ag flakes, multiwalled carbon nanotubes decorated with Ag nanoparticles, and a nitrile-butadiene-rubber matrix. The Teflon-coated polyethylene terephthalate film was used as a flexible substrate. The width of lines (50-500 μm) and circuit patterns were controlled by the programmable scanning of a focused laser beam (power = 50 mW, scanning speed = 1 mm s-1). The laser irradiation removed solvent and induced effective coalescence among fillers providing a conductivity as high as 25 012 S cm-1. The conductivity stability was excellent under the ambient air and humid environments. The normalized resistance change of the pattern was smaller than 1.2 at the bending radius of 5 mm. The cyclability and adhesion of the laser-sintered line pattern on the substrate was excellent. A flexible circuit was fabricated sequentially for operating light emitting diodes during the bending motion, demonstrating excellent feasibility for practical applications in flexible electronics.

Laser patterning of highly conductive flexible circuits.

PubMed

Ji, Seok Young; Ajmal, C Muhammed; Kim, Taehun; Chang, Won Seok; Baik, Seunghyun

2017-04-21

There has been considerable attention paid to highly conductive flexible adhesive (CFA) materials as electrodes and interconnectors for future flexible electronic devices. However, the patterning technology still needs to be developed to construct micro-scale electrodes and circuits. Here we developed the selective laser sintering technology where the pattering and curing were accomplished simultaneously without making additional masks. The CFA was composed of micro-scale Ag flakes, multiwalled carbon nanotubes decorated with Ag nanoparticles, and a nitrile-butadiene-rubber matrix. The Teflon-coated polyethylene terephthalate film was used as a flexible substrate. The width of lines (50-500 μm) and circuit patterns were controlled by the programmable scanning of a focused laser beam (power = 50 mW, scanning speed = 1 mm s -1 ). The laser irradiation removed solvent and induced effective coalescence among fillers providing a conductivity as high as 25 012 S cm -1 . The conductivity stability was excellent under the ambient air and humid environments. The normalized resistance change of the pattern was smaller than 1.2 at the bending radius of 5 mm. The cyclability and adhesion of the laser-sintered line pattern on the substrate was excellent. A flexible circuit was fabricated sequentially for operating light emitting diodes during the bending motion, demonstrating excellent feasibility for practical applications in flexible electronics.

Integrated low power digital gyro control electronics

NASA Technical Reports Server (NTRS)

M'Closkey, Robert (Inventor); Grayver, Eugene (Inventor); Challoner, A. Dorian (Inventor); Hayworth, Ken J. (Inventor)

2005-01-01

Embodiments of the invention generally encompass a digital, application specific integrated circuit (ASIC) has been designed to perform excitation of a selected mode within a vibratory rate gyroscope, damping, or force-rebalance, of other modes within the sensor, and signal demodulation of the in-phase and quadrature components of the signal containing the angular rate information. The ASIC filters dedicated to each channel may be individually programmed to accommodate different rate sensor designs/technology or variations within the same class of sensors. The ASIC architecture employs a low-power design, making the ASIC, particularly suitable for use in power-sensitive applications.

Multi-Kilowatt Power Module for High-Power Hall Thrusters

NASA Technical Reports Server (NTRS)

Pinero, Luis R.; Bowers, Glen E.

2005-01-01

Future NASA missions will require high-performance electric propulsion systems. Hall thrusters are being developed at NASA Glenn for high-power, high-specific impulse operation. These thrusters operate at power levels up to 50 kW of power and discharge voltages in excess of 600 V. A parallel effort is being conducted to develop power electronics for these thrusters that push the technology beyond the 5kW state-of-the-art power level. A 10 kW power module was designed to produce an output of 500 V and 20 A from a nominal 100 V input. Resistive load tests revealed efficiencies in excess of 96 percent. Load current share and phase synchronization circuits were designed and tested that will allow connecting multiple modules in parallel to process higher power.

Concept Developed for an Implanted Stimulated Muscle-Powered Piezoelectric Generator

NASA Technical Reports Server (NTRS)

Lewandowski, Beth; Kilgore, Kevin; Ercegovic, David; Gustafson, Kenneth

2005-01-01

Implanted electronic devices are typically powered by batteries or transcutaneous power transmission. Batteries must be replaced or recharged, and transcutaneous power sources burden the patient or subject with external equipment prone to failure. A completely self-sustaining implanted power source would alleviate these limitations. Skeletal muscle provides an available autologous power source containing native chemical energy that produces power in excess of the requirements for muscle activation by motor nerve stimulation. A concept has been developed to convert stimulated skeletal muscle power into electrical energy (see the preceding illustration). We propose to connect a piezoelectric generator between a muscle tendon and bone. Electrically stimulated muscle contractions would exert force on the piezoelectric generator, charging a storage circuit that would be used to power the stimulator and other devices.

Compact atmospheric pressure plasma self-resonant drive circuits

NASA Astrophysics Data System (ADS)

Law, V. J.; Anghel, S. D.

2012-02-01

This paper reports on compact solid-state self-resonant drive circuits that are specifically designed to drive an atmospheric pressure plasma jet and a parallel-plate dielectric barrier discharge of small volume (0.5 cm3). The atmospheric pressure plasma (APP) device can be operated with helium, argon or a mixture of both. Equivalent electrical models of the self-resonant drive circuits and discharge are developed and used to estimate the plasma impedance, plasma power density, current density or electron number density of three APP devices. These parameters and the kinetic gas temperature are dependent on the self-resonant frequency of the APP device. For a fixed switching frequency and APP device geometry, the plasma parameters are controlled by adjusting the dc voltage at the primary coil and the gas flow rate. The resonant frequency is controlled by the selection of the switching power transistor and means of step-up voltage transformation (ferrite core, flyback transformer, or Tesla coil). The flyback transformer operates in the tens of kHz, the ferrite core in the hundreds of kHz and Tesla coil in the MHz range. Embedded within this work is the principle of frequency pulling which is exemplified in the flyback transformer circuit that utilizes a pickup coil for feedback control of the switching frequency.

49 CFR 234.213 - Grounds.

Code of Federal Regulations, 2014 CFR

2014-10-01

...: circuits that include track rail; alternating current power distribution circuits that are grounded in the...) Circuits that include track rail; (2) Alternating current power distribution circuits that are grounded in...