21 CFR 886.4400 - Electronic metal locator.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Electronic metal locator. 886.4400 Section 886...) MEDICAL DEVICES OPHTHALMIC DEVICES Surgical Devices § 886.4400 Electronic metal locator. (a) Identification. An electronic metal locator is an AC-powered device with probes intended to locate metallic...

21 CFR 886.4400 - Electronic metal locator.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Electronic metal locator. 886.4400 Section 886...) MEDICAL DEVICES OPHTHALMIC DEVICES Surgical Devices § 886.4400 Electronic metal locator. (a) Identification. An electronic metal locator is an AC-powered device with probes intended to locate metallic...

21 CFR 886.4400 - Electronic metal locator.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Electronic metal locator. 886.4400 Section 886...) MEDICAL DEVICES OPHTHALMIC DEVICES Surgical Devices § 886.4400 Electronic metal locator. (a) Identification. An electronic metal locator is an AC-powered device with probes intended to locate metallic...

21 CFR 886.4400 - Electronic metal locator.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Electronic metal locator. 886.4400 Section 886...) MEDICAL DEVICES OPHTHALMIC DEVICES Surgical Devices § 886.4400 Electronic metal locator. (a) Identification. An electronic metal locator is an AC-powered device with probes intended to locate metallic...

Center for High-Frequency Microelectronics

DTIC Science & Technology

1992-08-31

34 IEEE Transactions on Electron Devices, 38, No. 6, pp. 1324-1333, June 1991. 185. C. C. Chen, R. K. Mains and G. I. Haddad, " High - Power Generation in...Weiss, J. Hu and W.-P. Hong, "Electronic 0 Properties of Power High Electron Mobility Transistors," Conference on Ballistic Electrons for Transistors...method at higher frequencies than previously believed. - Calculations of high - power generation modes in Si IMPATT devices in the 100-200 GHz range have

SiC Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Silicon Carbide Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2006-01-01

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Thin, nearly wireless adaptive optical device

NASA Technical Reports Server (NTRS)

Knowles, Gareth (Inventor); Hughes, Eli (Inventor)

2008-01-01

A thin, nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

Thin, nearly wireless adaptive optical device

NASA Technical Reports Server (NTRS)

Knowles, Gareth (Inventor); Hughes, Eli (Inventor)

2007-01-01

A thin, nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

Thin nearly wireless adaptive optical device

NASA Technical Reports Server (NTRS)

Knowles, Gareth J. (Inventor); Hughes, Eli (Inventor)

2009-01-01

A thin nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

Control Structures for VSC-based FACTS Devices under Normal and Faulted AC-systems

NASA Astrophysics Data System (ADS)

Babaei, Saman

This thesis is concerned with improving the Flexible AC Transmission Systems (FACTS) devices performance under the normal and fault AC-system conditions by proposing new control structures and also converter topologies. The combination of the increasing electricity demand and restrictions in expanding the power system infrastructures has urged the utility owners to deploy the utility-scaled power electronics in the power system. Basically, FACTS is referred to the application of the power electronics in the power systems. Voltage Source Converter (VSC) is the preferred building block of the FACTS devices and many other utility-scale power electronics applications. Despite of advances in the semiconductor technology and ultra-fast microprocessor based controllers, there are still many issues to address and room to improve[25]. An attempt is made in this thesis to address these important issues of the VSC-based FACTS devices and provide solutions to improve them.

European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (5th)

DTIC Science & Technology

1994-10-07

Characterisation and Modelling WEDNESDAY 5th OCTOBER Session C Hot Carriers Session D Oxide States Session E Power Devices Workshop 2 Power Devices Session F...Medium Enterprises .......... 17 W2 Power Devices Workshop "Reliability of Power Semiconductors for Traction Applications...New Mexico, USA Sandia National Laboratories, Albuquerque, New Mexico, USA SESSION E Power Devices El Reliability Issues in New Technology

Low inductance power electronics assembly

DOEpatents

Herron, Nicholas Hayden; Mann, Brooks S.; Korich, Mark D.; Chou, Cindy; Tang, David; Carlson, Douglas S.; Barry, Alan L.

2012-10-02

A power electronics assembly is provided. A first support member includes a first plurality of conductors. A first plurality of power switching devices are coupled to the first support member. A first capacitor is coupled to the first support member. A second support member includes a second plurality of conductors. A second plurality of power switching devices are coupled to the second support member. A second capacitor is coupled to the second support member. The first and second pluralities of conductors, the first and second pluralities of power switching devices, and the first and second capacitors are electrically connected such that the first plurality of power switching devices is connected in parallel with the first capacitor and the second capacitor and the second plurality of power switching devices is connected in parallel with the second capacitor and the first capacitor.

Prolonged energy harvesting for ingestible devices.

PubMed

Nadeau, Phillip; El-Damak, Dina; Glettig, Dean; Kong, Yong Lin; Mo, Stacy; Cleveland, Cody; Booth, Lucas; Roxhed, Niclas; Langer, Robert; Chandrakasan, Anantha P; Traverso, Giovanni

2017-01-01

Ingestible electronics have revolutionized the standard of care for a variety of health conditions. Extending the capacity and safety of these devices, and reducing the costs of powering them, could enable broad deployment of prolonged monitoring systems for patients. Although prior biocompatible power harvesting systems for in vivo use have demonstrated short minute-long bursts of power from the stomach, not much is known about the capacity to power electronics in the longer term and throughout the gastrointestinal tract. Here, we report the design and operation of an energy-harvesting galvanic cell for continuous in vivo temperature sensing and wireless communication. The device delivered an average power of 0.23 μW per mm 2 of electrode area for an average of 6.1 days of temperature measurements in the gastrointestinal tract of pigs. This power-harvesting cell has the capacity to provide power for prolonged periods of time to the next generation of ingestible electronic devices located in the gastrointestinal tract.

Piezoelectric-based hybrid reserve power sources for munitions

NASA Astrophysics Data System (ADS)

Rastegar, J.; Kwok, P.

2017-04-01

Reserve power sources are used extensively in munitions and other devices, such as emergency devices or remote sensors that need to be powered only once and for a relatively short duration. Current chemical reserve power sources, including thermal batteries and liquid reserve batteries sometimes require more than 100 msec to become fully activated. In many applications, however, electrical energy is required in a few msec following the launch event. In such applications, other power sources are needed to provide power until the reserve battery is fully activated. The amount of electrical energy that is required by most munitions before chemical reserve batteries are fully activated is generally small and can be provided by properly designed piezoelectric-based energy harvesting devices. In this paper, the development of a hybrid reserve power source that is constructed by integration of a piezoelectric-based energy harvesting device with a reserve battery to provide power almost instantaneously upon munitions firing or other similar events is being reported. A review of the state of the art in piezoelectric-based electrical energy harvesting methods and devices and their charge collection electronics for use in the developed hybrid power sources is provided together with the results of testing of the piezoelectric component of the power source and its electronic safety and charge collection electronics.

A 5 nW Quasi-Linear CMOS Hot-Electron Injector for Self-Powered Monitoring of Biomechanical Strain Variations.

PubMed

Zhou, Liang; Abraham, Adam C; Tang, Simon Y; Chakrabartty, Shantanu

2016-12-01

Piezoelectricity-driven hot-electron injectors (p-HEI) are used for self-powered monitoring of mechanical activity in biomechanical implants and structures. Previously reported p-HEI devices operate by harvesting energy from a piezoelectric transducer to generate current and voltage references which are then used for initiating and controlling the process of hot-electron injection. As a result, the minimum energy required to activate the device is limited by the power requirements of the reference circuits. In this paper we present a p-HEI device that operates by directly exploiting the self-limiting capability of an energy transducer when driving the process of hot-electron injection in a pMOS floating-gate transistor. As a result, the p-HEI device can activate itself at input power levels less than 5 nW. Using a prototype fabricated in a 0.5- [Formula: see text] bulk CMOS process we validate the functionality of the proposed injector and show that for a fixed input power, its dynamics is quasi-linear with respect to time. The paper also presents measurement results using a cadaver phantom where the fabricated p-HEI device has been integrated with a piezoelectric transducer and is used for self-powered monitoring of mechanical activity.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilbert; Bennion, Kevin

This project will develop thermal management strategies to enable efficient and high-temperature wide-bandgap (WBG)-based power electronic systems (e.g., emerging inverter and DC-DC converter designs). The use of WBG-based devices in automotive power electronics will improve efficiency and increase driving range in electric-drive vehicles; however, the implementation of this technology is limited, in part, due to thermal issues. This project will develop system-level thermal models to determine the thermal limitations of current automotive power modules under elevated device temperature conditions. Additionally, novel cooling concepts and material selection will be evaluated to enable high-temperature silicon and WBG devices in power electronics components.more » WBG devices (silicon carbide [SiC], gallium nitride [GaN]) promise to increase efficiency, but will be driven as hard as possible. This creates challenges for thermal management and reliability.« less

All-in-One Shape-Adaptive Self-Charging Power Package for Wearable Electronics.

PubMed

Guo, Hengyu; Yeh, Min-Hsin; Lai, Ying-Chih; Zi, Yunlong; Wu, Changsheng; Wen, Zhen; Hu, Chenguo; Wang, Zhong Lin

2016-11-22

Recently, a self-charging power unit consisting of an energy harvesting device and an energy storage device set the foundation for building a self-powered wearable system. However, the flexibility of the power unit working under extremely complex deformations (e.g., stretching, twisting, and bending) becomes a key issue. Here, we present a prototype of an all-in-one shape-adaptive self-charging power unit that can be used for scavenging random body motion energy under complex mechanical deformations and then directly storing it in a supercapacitor unit to build up a self-powered system for wearable electronics. A kirigami paper based supercapacitor (KP-SC) was designed to work as the flexible energy storage device (stretchability up to 215%). An ultrastretchable and shape-adaptive silicone rubber triboelectric nanogenerator (SR-TENG) was utilized as the flexible energy harvesting device. By combining them with a rectifier, a stretchable, twistable, and bendable, self-charging power package was achieved for sustainably driving wearable electronics. This work provides a potential platform for the flexible self-powered systems.

SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments

NASA Astrophysics Data System (ADS)

Godignon, P.; Alexandru, M.; Banu, V.; Montserrat, J.; Jorda, X.; Vellvehi, M.; Schmidt, B.; Michel, P.; Millan, J.

2014-08-01

The currently developed SiC electronic devices are more robust to high temperature operation and radiation exposure damage than correspondingly rated Si ones. In order to integrate the existent SiC high power and high temperature electronics into more complex systems, a SiC integrated circuit (IC) technology capable of operation at temperatures substantially above the conventional ones is required. Therefore, this paper is a step towards the development of ICs-control electronics that have to attend the harsh environment power applications. Concretely, we present the development of SiC MESFET-based digital circuitry, able to integrate gate driver for SiC power devices. Furthermore, a planar lateral power MESFET is developed with the aim of its co-integration on the same chip with the previously mentioned SiC digital ICs technology. And finally, experimental results on SiC Schottky-gated devices irradiated with protons and electrons are presented. This development is based on the Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilbert

The objective for this project is to develop thermal management strategies to enable efficient and high-temperature wide-bandgap (WBG)-based power electronic systems (e.g., emerging inverter and DC-DC converter). Device- and system-level thermal analyses are conducted to determine the thermal limitations of current automotive power modules under elevated device temperature conditions. Additionally, novel cooling concepts and material selection will be evaluated to enable high-temperature silicon and WBG devices in power electronics components. WBG devices (silicon carbide [SiC], gallium nitride [GaN]) promise to increase efficiency, but will be driven as hard as possible. This creates challenges for thermal management and reliability.

Body motion for powering biomedical devices.

PubMed

Romero, Edwar; Warrington, Robert O; Neuman, Michael R

2009-01-01

Kinetic energy harvesting has been demonstrated as a useful technique for powering portable electronic devices. Body motion can be used to generate energy to power small electronic devices for biomedical applications. These scavengers can recharge batteries, extending their operation lifetime or even replace them. This paper addresses the generation of energy from human activities. An axial flux generator is presented using body motion for powering miniature biomedical devices. This generator presents a gear-shaped planar coil and a multipole NdFeB permanent magnet (PM) ring with an attached eccentric weight. The device generates energy by electromagnetic induction on the planar coil when subject to a changing magnetic flux due to the generator oscillations produced by body motion. A 1.5 cm(3) prototype has generated 3.9 microW of power while walking with the generator placed laterally on the ankle.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waye, Scot

Power electronics that use high-temperature devices pose a challenge for thermal management. With the devices running at higher temperatures and having a smaller footprint, the heat fluxes increase from previous power electronic designs. This project overview presents an approach to examine and design thermal management strategies through cooling technologies to keep devices within temperature limits, dissipate the heat generated by the devices and protect electrical interconnects and other components for inverter, converter, and charger applications. This analysis, validation, and demonstration intends to take a multi-scale approach over the device, module, and system levels to reduce size, weight, and cost.

Single-Event Effects in Silicon and Silicon Carbide Power Devices

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Research on fault characteristics about switching component failures for distribution electronic power transformers

NASA Astrophysics Data System (ADS)

Sang, Z. X.; Huang, J. Q.; Yan, J.; Du, Z.; Xu, Q. S.; Lei, H.; Zhou, S. X.; Wang, S. C.

2017-11-01

The protection is an essential part for power device, especially for those in power grid, as the failure may cost great losses to the society. A study on the voltage and current abnormality in the power electronic devices in Distribution Electronic Power Transformer (D-EPT) during the failures on switching components is presented, as well as the operational principles for 10 kV rectifier, 10 kV/400 V DC-DC converter and 400 V inverter in D-EPT. Derived from the discussion on the effects of voltage and current distortion, the fault characteristics as well as a fault diagnosis method for D-EPT are introduced.

Wireless Power Transfer to Millimeter-Sized Gastrointestinal Electronics Validated in a Swine Model.

PubMed

Abid, Abubakar; O'Brien, Jonathan M; Bensel, Taylor; Cleveland, Cody; Booth, Lucas; Smith, Brian R; Langer, Robert; Traverso, Giovanni

2017-04-27

Electronic devices placed in the gastrointestinal (GI) tract for prolonged periods have the potential to transform clinical evaluation and treatment. One challenge to the deployment of such gastroresident electronics is the difficulty in powering millimeter-sized electronics devices without using batteries, which compromise biocompatibility and long-term residence. We examined the feasibility of leveraging mid-field wireless powering to transfer power from outside of the body to electronics at various locations along the GI tract. Using simulations and ex vivo measurements, we designed mid-field antennas capable of operating efficiently in tissue at 1.2 GHz. These antennas were then characterized in vivo in five anesthetized pigs, by placing one antenna outside the body, and the other antenna inside the body endoscopically, at the esophagus, stomach, and colon. Across the animals tested, mean transmission efficiencies of -41.2, -36.1, and -34.6 dB were achieved in vivo while coupling power from outside the body to the esophagus, stomach, and colon, respectively. This corresponds to power levels of 37.5 μW, 123 μW and 173 μW received by antennas in the respective locations, while keeping radiation exposure levels below safety thresholds. These power levels are sufficient to wirelessly power a range of medical devices from outside of the body.

Wireless Power Transfer to Millimeter-Sized Gastrointestinal Electronics Validated in a Swine Model

NASA Astrophysics Data System (ADS)

Abid, Abubakar; O'Brien, Jonathan M.; Bensel, Taylor; Cleveland, Cody; Booth, Lucas; Smith, Brian R.; Langer, Robert; Traverso, Giovanni

2017-04-01

Electronic devices placed in the gastrointestinal (GI) tract for prolonged periods have the potential to transform clinical evaluation and treatment. One challenge to the deployment of such gastroresident electronics is the difficulty in powering millimeter-sized electronics devices without using batteries, which compromise biocompatibility and long-term residence. We examined the feasibility of leveraging mid-field wireless powering to transfer power from outside of the body to electronics at various locations along the GI tract. Using simulations and ex vivo measurements, we designed mid-field antennas capable of operating efficiently in tissue at 1.2 GHz. These antennas were then characterized in vivo in five anesthetized pigs, by placing one antenna outside the body, and the other antenna inside the body endoscopically, at the esophagus, stomach, and colon. Across the animals tested, mean transmission efficiencies of -41.2, -36.1, and -34.6 dB were achieved in vivo while coupling power from outside the body to the esophagus, stomach, and colon, respectively. This corresponds to power levels of 37.5 μW, 123 μW and 173 μW received by antennas in the respective locations, while keeping radiation exposure levels below safety thresholds. These power levels are sufficient to wirelessly power a range of medical devices from outside of the body.

Gallium nitride vertical power devices on foreign substrates: a review and outlook

NASA Astrophysics Data System (ADS)

Zhang, Yuhao; Dadgar, Armin; Palacios, Tomás

2018-07-01

Vertical gallium nitride (GaN) power devices have attracted increased attention due to their superior high-voltage and high-current capacity as well as easier thermal management than lateral GaN high electron mobility transistors. Vertical GaN devices are promising candidates for next-generation power electronics in electric vehicles, data centers, smart grids and renewable energy process. The use of low-cost foreign substrates such as silicon (Si) substrates, instead of the expensive free-standing GaN substrates, could greatly trim material cost and enable large-diameter wafer processing while maintaining high device performance. This review illustrates recent progress in material epitaxy, device design, device physics and processing technologies for the development of vertical GaN power devices on low-cost foreign substrates. Although the device technologies are still at the early stage of development, state-of-the-art vertical GaN-on-Si power diodes have already shown superior Baliga’s figure of merit than commercial SiC and Si power devices at the voltage classes beyond 600 V. Furthermore, we unveil the design space of vertical GaN power devices on native and different foreign substrates, from the analysis of the impact of dislocation and defects on device performance. We conclude by identifying the application space, current challenges and exciting research opportunities in this very dynamic research field.

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

2002-01-01

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

Control of Spin Wave Dynamics in Spatially Twisted Magnetic Structures

DTIC Science & Technology

2017-06-27

realize high-performance spintronic and magnetic storage devices. 15. SUBJECT TERMS nano- electronics , spin, wave, magnetic, multi-functional, device 16... electronics has required us to develop high-performance and multi-functional electronic devices driven with extremely low power consumption...Spintronics”, simultaneously utilizing the charge and the spin of electrons , provides us with solutions to essential problems for semiconductor-based

DC Linked Hybrid Generation System with an Energy Storage Device including a Photo-Voltaic Generation and a Gas Engine Cogeneration for Residential Houses

NASA Astrophysics Data System (ADS)

Lung, Chienru; Miyake, Shota; Kakigano, Hiroaki; Miura, Yushi; Ise, Toshifumi; Momose, Toshinari; Hayakawa, Hideki

For the past few years, a hybrid generation system including solar panel and gas cogeneration is being used for residential houses. Solar panels can generate electronic power at daytime; meanwhile, it cannot generate electronic power at night time. But the power consumption of residential houses usually peaks in the evening. The gas engine cogeneration system can generate electronic power without such a restriction, and it also can generate heat power to warm up house or to produce hot water. In this paper, we propose the solar panel and gas engine co-generation hybrid system with an energy storage device that is combined by dc bus. If a black out occurs, the system still can supply electronic power for special house loads. We propose the control scheme for the system which are related with the charging level of the energy storage device, the voltage of the utility grid which can be applied both grid connected and stand alone operation. Finally, we carried out some experiments to demonstrate the system operation and calculation for loss estimation.

Thermal Peak Management Using Organic Phase Change Materials for Latent Heat Storage in Electronic Applications

PubMed Central

Maxa, Jacob; Novikov, Andrej; Nowottnick, Mathias

2017-01-01

Modern high power electronics devices consists of a large amount of integrated circuits for switching and supply applications. Beside the benefits, the technology exhibits the problem of an ever increasing power density. Nowadays, heat sinks that are directly mounted on a device, are used to reduce the on-chip temperature and dissipate the thermal energy to the environment. This paper presents a concept of a composite coating for electronic components on printed circuit boards or electronic assemblies that is able to buffer a certain amount of thermal energy, dissipated from a device. The idea is to suppress temperature peaks in electronic components during load peaks or electronic shorts, which otherwise could damage or destroy the device, by using a phase change material to buffer the thermal energy. The phase change material coating could be directly applied on the chip package or the PCB using different mechanical retaining jigs.

Fabrication, characterization, and modeling of a biodegradable battery for transient electronics

NASA Astrophysics Data System (ADS)

Edupuganti, Vineet; Solanki, Raj

2016-12-01

Traditionally, emphasis has been placed on durable, long-lasting electronics. However, electronics that are meant to intentionally degrade over time can actually have significant practical applications. Biodegradable, or transient, electronics would open up opportunities in the field of medical implants, where the need for surgical removal of devices could be eliminated. Environmental sensors and, eventually, consumer electronics would also greatly benefit from this technology. An essential component of transient electronics is the battery, which serves as a biodegradable power source. This work involves the fabrication, characterization, and modeling of a magnesium-based biodegradable battery. Galvanostatic discharge tests show that an anode material of magnesium alloy AZ31 extends battery lifetime by over six times, as compared to pure magnesium. With AZ31, the maximum power and capacity of the fabricated device are 67 μW and 5.2 mAh, respectively, though the anode area is just 0.8 cm2. The development of an equivalent circuit model provided insight into the battery's behavior by extracting fitting parameters from experimental data. The model can accurately simulate device behavior, taking into account its intentional degradation. The size of the device and the power it produces are in accordance with typical levels for low-power transient systems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kar, Durga P.; Nayak, Praveen P.; Bhuyan, Satyanarayan

In order to power or charge electronic devices wirelessly, a bi-directional wireless power transfer method has been proposed and experimentally investigated. In the proposed design, two receiving coils are used on both sides of a transmitting coil along its central axis to receive the power wirelessly from the generated magnetic fields through strongly coupled magnetic resonance. It has been observed experimentally that the maximum power transfer occurs at the operating resonant frequency for optimum electric load connected across the receiving coils on both side. The optimum wireless power transfer efficiency is 88% for the bi-directional power transfer technique compared 84%more » in the one side receiver system. By adopting the developed bi-directional power transfer method, two electronic devices can be powered up or charged simultaneously instead of a single device through usual one side receiver system without affecting the optimum power transfer efficiency.« less

Modern Microwave and Millimeter-Wave Power Electronics

NASA Astrophysics Data System (ADS)

Barker, Robert J.; Luhmann, Neville C.; Booske, John H.; Nusinovich, Gregory S.

2005-04-01

A comprehensive study of microwave vacuum electronic devices and their current and future applications While both vacuum and solid-state electronics continue to evolve and provide unique solutions, emerging commercial and military applications that call for higher power and higher frequencies to accommodate massive volumes of transmitted data are the natural domain of vacuum electronics technology. Modern Microwave and Millimeter-Wave Power Electronics provides systems designers, engineers, and researchers-especially those with primarily solid-state training-with a thoroughly up-to-date survey of the rich field of microwave vacuum electronic device (MVED) technology. This book familiarizes the R&D and academic communities with the capabilities and limitations of MVED and highlights the exciting scientific breakthroughs of the past decade that are dramatically increasing the compactness, efficiency, cost-effectiveness, and reliability of this entire class of devices. This comprehensive text explores a wide range of topics: * Traveling-wave tubes, which form the backbone of satellite and airborne communications, as well as of military electronic countermeasures systems * Microfabricated MVEDs and advanced electron beam sources * Klystrons, gyro-amplifiers, and crossed-field devices * "Virtual prototyping" of MVEDs via advanced 3-D computational models * High-Power Microwave (HPM) sources * Next-generation microwave structures and circuits * How to achieve linear amplification * Advanced materials technologies for MVEDs * A Web site appendix providing a step-by-step walk-through of a typical MVED design process Concluding with an in-depth examination of emerging applications and future possibilities for MVEDs, Modern Microwave and Millimeter-Wave Power Electronics ensures that systems designers and engineers understand and utilize the significant potential of this mature, yet continually developing technology. SPECIAL NOTE: All of the editors' royalties realized from the sale of this book will fund the future research and publication activities of graduate students in the vacuum electronics field.

High power microwave generator

DOEpatents

Minich, Roger W.

1988-01-01

A device (10) for producing high-powered and coherent microwaves is described. The device comprises an evacuated, cylindrical, and hollow real cathode (20) that is driven to inwardly field emit relativistic electrons. The electrons pass through an internally disposed cylindrical and substantially electron-transparent cylindrical anode (24), proceed toward a cylindrical electron collector electrode (26), and form a cylindrical virtual cathode (32). Microwaves are produced by spatial and temporal oscillations of the cylindrical virtual cathode (32), and by electrons that reflex back and forth between the cylindrical virtual cathode (32) and the cylindrical real cathode (20).

Power Electronics Thermal Management Research: Annual Progress Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilberto

The objective for this project is to develop thermal management strategies to enable efficient and high-temperature wide-bandgap (WBG)-based power electronic systems (e.g., emerging inverter and DC-DC converter). Reliable WBG devices are capable of operating at elevated temperatures (≥ 175 °Celsius). However, packaging WBG devices within an automotive inverter and operating them at higher junction temperatures will expose other system components (e.g., capacitors and electrical boards) to temperatures that may exceed their safe operating limits. This creates challenges for thermal management and reliability. In this project, system-level thermal analyses are conducted to determine the effect of elevated device temperatures on invertermore » components. Thermal modeling work is then conducted to evaluate various thermal management strategies that will enable the use of highly efficient WBG devices with automotive power electronic systems.« less

Millimeter-wave generation with spiraling electron beams

NASA Technical Reports Server (NTRS)

Kulke, B.

1971-01-01

The feasibility of using the interaction between a thin, solid, spiraling electron beam of 10 to 20 kV energy and a microwave cavity to generate watts of CW millimeter-wave power was investigated. Experimental results are given for several prototype devices operating at 9.4 GHz and at 94 GHz. Power outputs of 5 W, and electronic efficiencies near 3%, were obtained at X band, and moderate gain was obtained at 94 GHz. The small-signal theory gives a good fit to the X-band data, and the device behavior at 94 GHz is as expected from the given beam characteristics. The performance is limited chiefly by the velocity spread in the spiraling electron beam, and once this can be brought under control, high-power generation of millimeter waves appears quite feasible with this type of device.

Single-Event Effects in Silicon Carbide Power Devices

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Ikpe, Stanley; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2015-01-01

This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

Evaluation of a Silicon 90Sr Betavoltaic Power Source.

PubMed

Dixon, Jefferson; Rajan, Aravindh; Bohlemann, Steven; Coso, Dusan; Upadhyaya, Ajay D; Rohatgi, Ajeet; Chu, Steven; Majumdar, Arun; Yee, Shannon

2016-12-01

Betavoltaic energy converters (i.e., β-batteries) are attractive power sources because of their potential for high energy densities (>200 MWh/kg) and long duration continuous discharge (>1 year). However, conversion efficiencies have been historically low (<3%). High efficiency devices can be achieved by matching β-radiation transport length scales with the device physics length scales. In this work, the efficiency of c-Si devices using high-energy (>1 MeV) electrons emitted from 90 Sr as a power source is investigated. We propose a design for a >10% efficient betavoltaic device, which generates 1 W of power. A Varian Clinac iX is used to simulate the high-energy electrons emitted from 90 Sr, and a high efficiency c-Si photovoltaic cell is used as the converter. The measured conversion efficiency is 16%. This relatively high value is attributed to proper length scale matching and the generation of secondary electrons in c-Si by the primary β-particles.

Evaluation of a Silicon 90Sr Betavoltaic Power Source

PubMed Central

Dixon, Jefferson; Rajan, Aravindh; Bohlemann, Steven; Coso, Dusan; Upadhyaya, Ajay D.; Rohatgi, Ajeet; Chu, Steven; Majumdar, Arun; Yee, Shannon

2016-01-01

Betavoltaic energy converters (i.e., β-batteries) are attractive power sources because of their potential for high energy densities (>200 MWh/kg) and long duration continuous discharge (>1 year). However, conversion efficiencies have been historically low (<3%). High efficiency devices can be achieved by matching β-radiation transport length scales with the device physics length scales. In this work, the efficiency of c-Si devices using high-energy (>1 MeV) electrons emitted from 90Sr as a power source is investigated. We propose a design for a >10% efficient betavoltaic device, which generates 1 W of power. A Varian Clinac iX is used to simulate the high-energy electrons emitted from 90Sr, and a high efficiency c-Si photovoltaic cell is used as the converter. The measured conversion efficiency is 16%. This relatively high value is attributed to proper length scale matching and the generation of secondary electrons in c-Si by the primary β-particles. PMID:27905521

Evaluation of a Silicon 90Sr Betavoltaic Power Source

NASA Astrophysics Data System (ADS)

Dixon, Jefferson; Rajan, Aravindh; Bohlemann, Steven; Coso, Dusan; Upadhyaya, Ajay D.; Rohatgi, Ajeet; Chu, Steven; Majumdar, Arun; Yee, Shannon

2016-12-01

Betavoltaic energy converters (i.e., β-batteries) are attractive power sources because of their potential for high energy densities (>200 MWh/kg) and long duration continuous discharge (>1 year). However, conversion efficiencies have been historically low (<3%). High efficiency devices can be achieved by matching β-radiation transport length scales with the device physics length scales. In this work, the efficiency of c-Si devices using high-energy (>1 MeV) electrons emitted from 90Sr as a power source is investigated. We propose a design for a >10% efficient betavoltaic device, which generates 1 W of power. A Varian Clinac iX is used to simulate the high-energy electrons emitted from 90Sr, and a high efficiency c-Si photovoltaic cell is used as the converter. The measured conversion efficiency is 16%. This relatively high value is attributed to proper length scale matching and the generation of secondary electrons in c-Si by the primary β-particles.

Flexible piezoelectric energy harvesting from jaw movements

NASA Astrophysics Data System (ADS)

Delnavaz, Aidin; Voix, Jérémie

2014-10-01

Piezoelectric fiber composites (PFC) represent an interesting subset of smart materials that can function as sensor, actuator and energy converter. Despite their excellent potential for energy harvesting, very few PFC mechanisms have been developed to capture the human body power and convert it into an electric current to power wearable electronic devices. This paper provides a proof of concept for a head-mounted device with a PFC chin strap capable of harvesting energy from jaw movements. An electromechanical model based on the bond graph method is developed to predict the power output of the energy harvesting system. The optimum resistance value of the load and the best stretch ratio in the strap are also determined. A prototype was developed and tested and its performances were compared to the analytical model predictions. The proposed piezoelectric strap mechanism can be added to all types of head-mounted devices to power small-scale electronic devices such as hearing aids, electronic hearing protectors and communication earpieces.

Percussive mole boring device with electronic transmitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stangl, G.A.; Lee, D.W.; Wilson, D.A.

This patent describes an improvement in an unguided percussive mole boring device. It is for use with a flexible hose connected to the mole boring device for providing a source of percussive power to drive the mole boring device, percussive means connected to the flexible hose and driven by a percussive power source for impacting the mole boring device.

GaN Initiative for Grid Applications (GIGA)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Turner, George

2015-07-03

For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -evenmore » for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.« less

Wireless Power Transfer to Millimeter-Sized Gastrointestinal Electronics Validated in a Swine Model

PubMed Central

Abid, Abubakar; O’Brien, Jonathan M.; Bensel, Taylor; Cleveland, Cody; Booth, Lucas; Smith, Brian R.; Langer, Robert; Traverso, Giovanni

2017-01-01

Electronic devices placed in the gastrointestinal (GI) tract for prolonged periods have the potential to transform clinical evaluation and treatment. One challenge to the deployment of such gastroresident electronics is the difficulty in powering millimeter-sized electronics devices without using batteries, which compromise biocompatibility and long-term residence. We examined the feasibility of leveraging mid-field wireless powering to transfer power from outside of the body to electronics at various locations along the GI tract. Using simulations and ex vivo measurements, we designed mid-field antennas capable of operating efficiently in tissue at 1.2 GHz. These antennas were then characterized in vivo in five anesthetized pigs, by placing one antenna outside the body, and the other antenna inside the body endoscopically, at the esophagus, stomach, and colon. Across the animals tested, mean transmission efficiencies of −41.2, −36.1, and −34.6 dB were achieved in vivo while coupling power from outside the body to the esophagus, stomach, and colon, respectively. This corresponds to power levels of 37.5 μW, 123 μW and 173 μW received by antennas in the respective locations, while keeping radiation exposure levels below safety thresholds. These power levels are sufficient to wirelessly power a range of medical devices from outside of the body. PMID:28447624

Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

NASA Astrophysics Data System (ADS)

Su, Ming; Chen, Chingchi; Rajan, Siddharth

2013-07-01

GaN, a wide bandgap semiconductor successfully implemented in optical and high-speed electronic devices, has gained momentum in recent years for power electronics applications. Along with rapid progress in material and device processing technologies, high-voltage transistors over 600 V have been reported by a number of teams worldwide. These advances make GaN highly attractive for the growing market of electrified vehicles, which currently employ bipolar silicon devices in the 600-1200 V class for the traction inverter. However, to capture this billion-dollar power market, GaN has to compete with existing IGBT products and deliver higher performance at comparable or lower cost. This paper reviews key achievements made by the GaN semiconductor industry, requirements of the automotive electric drive system and remaining challenges for GaN power devices to fit in the inverter application of hybrid vehicles.

A large-area wireless power-transmission sheet using printed organic transistors and plastic MEMS switches.

PubMed

Sekitani, Tsuyoshi; Takamiya, Makoto; Noguchi, Yoshiaki; Nakano, Shintaro; Kato, Yusaku; Sakurai, Takayasu; Someya, Takao

2007-06-01

The electronics fields face serious problems associated with electric power; these include the development of ecologically friendly power-generation systems and ultralow-power-consuming circuits. Moreover, there is a demand for developing new power-transmission methods in the imminent era of ambient electronics, in which a multitude of electronic devices such as sensor networks will be used in our daily life to enhance security, safety and convenience. We constructed a sheet-type wireless power-transmission system by using state-of-the-art printing technologies using advanced electronic functional inks. This became possible owing to recent progress in organic semiconductor technologies; the diversity of chemical syntheses and processes on organic materials has led to a new class of organic semiconductors, dielectric layers and metals with excellent electronic functionalities. The new system directly drives electronic devices by transmitting power of the order of tens of watts without connectors, thereby providing an easy-to-use and reliable power source. As all of the components are manufactured on plastic films, it is easy to place the wireless power-transmission sheet over desks, floors, walls and any other location imaginable.

Device for timing and power level setting for microwave applications

NASA Astrophysics Data System (ADS)

Ursu, M.-P.; Buidoş, T.

2016-08-01

Nowadays, the microwaves are widely used for various technological processes. The microwaves are emitted by magnetrons, which have strict requirements concerning power supplies for anode and filament cathodes, intensity of magnetic field, cooling and electromagnetic shielding. The magnetrons do not tolerate any alteration of their required voltages, currents and magnetic fields, which means that their output microwave power is fixed, so the only way to alter the power level is to use time-division, by turning the magnetron on and off by repetitive time patterns. In order to attain accurate and reproducible results, as well as correct and safe operation of the microwave device, all these requirements must be fulfilled. Safe, correct and reproducible operation of the microwave appliance can be achieved by means of a specially built electronic device, which ensures accurate and reproducible exposure times, interlocking of the commands and automatic switch off when abnormal operating conditions occur. This driving device, designed and realized during the completion of Mr.Ursu's doctoral thesis, consists of a quartz time-base, several programmable frequency and duration dividers, LED displays, sensors and interlocking gates. The active and passive electronic components are placed on custom-made PCB's, designed and made by means of computer-aided applications and machines. The driving commands of the electronic device are delivered to the magnetron power supplies by means of optic zero-passing relays. The inputs of the electronic driving device can sense the status of the microwave appliance. The user is able to enter the total exposure time, the division factor that sets the output power level and, as a novelty, the clock frequency of the time divider.

Silicon carbide, an emerging high temperature semiconductor

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.; Powell, J. Anthony

1991-01-01

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

Air-Cooled Heat Exchanger for High-Temperature Power Electronics: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waye, S. K.; Lustbader, J.; Musselman, M.

2015-05-06

This work demonstrates a direct air-cooled heat exchanger strategy for high-temperature power electronic devices with an application specific to automotive traction drive inverters. We present experimental heat dissipation and system pressure curves versus flow rate for baseline and optimized sub-module assemblies containing two ceramic resistance heaters that provide device heat fluxes. The maximum allowable junction temperature was set to 175 deg.C. Results were extrapolated to the inverter scale and combined with balance-of-inverter components to estimate inverter power density and specific power. The results exceeded the goal of 12 kW/L and 12 kW/kg for power density and specific power, respectively.

Triggering Mechanism for Neutron Induced Single-Event Burnout in Power Devices

NASA Astrophysics Data System (ADS)

Shoji, Tomoyuki; Nishida, Shuichi; Hamada, Kimimori

2013-04-01

Cosmic ray neutrons can trigger catastrophic failures in power devices. It has been reported that parasitic transistor action causes single-event burnout (SEB) in power metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). However, power diodes do not have an inherent parasitic transistor. In this paper, we describe the mechanism triggering SEB in power diodes for the first time using transient device simulation. Initially, generated electron-hole pairs created by incident recoil ions generate transient current, which increases the electron density in the vicinity of the n-/n+ boundary. The space charge effect of the carriers leads to an increase in the strength of the electric field at the n-/n+ boundary. Finally, the onset of impact ionization at the n-/n+ boundary can trigger SEB. Furthermore, this failure is closely related to diode secondary breakdown. It was clarified that the impact ionization at the n-/n+ boundary is a key point of the mechanism triggering SEB in power devices.

77 FR 31274 - Hazardous Materials: Harmonization With the United Nations Recommendations on the Transport of...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-05-25

... (ICAO) Dangerous Goods Panel (DGP) regarding certain lithium ion battery-powered mobility aids (e.g... devices on an aircraft and providing for the intentional removal of a lithium ion battery from a device... limit lithium ion batteries used to power portable electronic devices and medical devices to 160 watt...

Reproducible Growth of High-Quality Cubic-SiC Layers

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Powell, J. Anthony

2004-01-01

Semiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Analysis on IGBT and Diode Failures in Distribution Electronic Power Transformers

NASA Astrophysics Data System (ADS)

Wang, Si-cong; Sang, Zi-xia; Yan, Jiong; Du, Zhi; Huang, Jia-qi; Chen, Zhu

2018-02-01

Fault characteristics of power electronic components are of great importance for a power electronic device, and are of extraordinary importance for those applied in power system. The topology structures and control method of Distribution Electronic Power Transformer (D-EPT) are introduced, and an exploration on fault types and fault characteristics for the IGBT and diode failures is presented. The analysis and simulation of different fault types for the fault characteristics lead to the D-EPT fault location scheme.

Applications and research on nano power electronics: an adventure beyond quantum electronics

NASA Astrophysics Data System (ADS)

Chakraborty, Arindam; Emadi, Ali

2005-06-01

This paper is a roadmap to the exhaustive role of the newly emerging field of nanotechnology in various application and research areas. Some of the today's important topics are plasma, dielectric layer semiconductor, and carbon nanoparticle based technologies. Carbon nanotubes are very useful for the purpose of fabricating nano opto power devices. The basic concept behind tunneling of electrons has been utilized to define another scope of this technology, and thus came many quantum scale tunneling devices and elements. Fabrication of crystal semiconductors of high quality along with oxides of nano aspect would give rise to superior device performance and find applications such as LEDs, LASER, VLSI technology and also in highly efficient solar cells. Many nano-research based organizations are fully devoted to develop nano power cells, which would give birth to new battery cells, tunneling devises, with high power quality, longer lives, and higher activation rates. Different electronics industries as well as the military organizations would be largely benefited due to this major component and system design ideas of 'Smart Power' technologies. The contribution of nano scale power electronics would be realized in various fields like switching devices, electromechanical systems and quantum science. Such a sophisticated technology will have great impact on the modernization of robotics; space systems, automotive systems and many other fields. The highly emerging field of nanomedicine according to specialists would bring a dramatic revolution in the present century. However nanomedicine is nothing but an integration of biology, medicine and technology. Thermoelectric materials as been referred earlier also are used in case of implantable medical equipments for generation of electric power sufficient for those equipments.

Chip-integrated optical power limiter based on an all-passive micro-ring resonator

NASA Astrophysics Data System (ADS)

Yan, Siqi; Dong, Jianji; Zheng, Aoling; Zhang, Xinliang

2014-10-01

Recent progress in silicon nanophotonics has dramatically advanced the possible realization of large-scale on-chip optical interconnects integration. Adopting photons as information carriers can break the performance bottleneck of electronic integrated circuit such as serious thermal losses and poor process rates. However, in integrated photonics circuits, few reported work can impose an upper limit of optical power therefore prevent the optical device from harm caused by high power. In this study, we experimentally demonstrate a feasible integrated scheme based on a single all-passive micro-ring resonator to realize the optical power limitation which has a similar function of current limiting circuit in electronics. Besides, we analyze the performance of optical power limiter at various signal bit rates. The results show that the proposed device can limit the signal power effectively at a bit rate up to 20 Gbit/s without deteriorating the signal. Meanwhile, this ultra-compact silicon device can be completely compatible with the electronic technology (typically complementary metal-oxide semiconductor technology), which may pave the way of very large scale integrated photonic circuits for all-optical information processors and artificial intelligence systems.

Field emission device driven by self-powered contact-electrification: Simulation and experimental analysis

NASA Astrophysics Data System (ADS)

Chen, Xiangyu; Jiang, Tao; Sun, Zhuo; Ou-Yang, Wei

2015-09-01

A self-powered field emission device (FED) driven by a single-electrode tribo-electric nanogenerator (TENG) is demonstrated. The mechanical motion works as both a power supply to drive the FED and a control unit to regulate the amount of emitted electrons. By using the Fowler-Nordheim equation and Kirchhoff laws, a theoretical model of this self-powered FED is proposed, and accordingly the real-time output characteristics of the device are systematically investigated. It is found that the motion distance of the TENG controls switch-on of the FED and determines the charge amount for emission, while the motion velocity regulates the amplitude of emission current. The minimum contact area for the TENG to generate field emission is about 9 cm2, which can be improved by optimizing FED structure and the tribo-materials of TENG. The demonstrated concept of this self-powered FED as well as the proposed physical analysis can serve as guidance for further applications of FED in such fields of self-powered electronics and soft electronics.

Field emission device driven by self-powered contact-electrification: Simulation and experimental analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Xiangyu, E-mail: chenxiangyu@binn.cas.cn, E-mail: ouyangwei@phy.ecnu.edu.cn; Jiang, Tao; Sun, Zhuo

A self-powered field emission device (FED) driven by a single-electrode tribo-electric nanogenerator (TENG) is demonstrated. The mechanical motion works as both a power supply to drive the FED and a control unit to regulate the amount of emitted electrons. By using the Fowler-Nordheim equation and Kirchhoff laws, a theoretical model of this self-powered FED is proposed, and accordingly the real-time output characteristics of the device are systematically investigated. It is found that the motion distance of the TENG controls switch-on of the FED and determines the charge amount for emission, while the motion velocity regulates the amplitude of emission current.more » The minimum contact area for the TENG to generate field emission is about 9 cm{sup 2}, which can be improved by optimizing FED structure and the tribo-materials of TENG. The demonstrated concept of this self-powered FED as well as the proposed physical analysis can serve as guidance for further applications of FED in such fields of self-powered electronics and soft electronics.« less

Power Electronics Design Laboratory Exercise for Final-Year M.Sc. Students

ERIC Educational Resources Information Center

Max, L.; Thiringer, T.; Undeland, T.; Karlsson, R.

2009-01-01

This paper presents experiences and results from a project task in power electronics for students at Chalmers University of Technology, Goteborg, Sweden, based on a flyback test board. The board is used in the course Power Electronic Devices and Applications. In the project task, the students design snubber circuits, improve the control of the…

Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

DOEpatents

Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

2014-11-11

Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

Bio-Nanobattery Development and Characterization

NASA Technical Reports Server (NTRS)

King, Glen C.; Choi, Sang H.; Chu, Sang-Hyon; Kim, Jae-Woo; Watt, Gerald D.; Lillehei, Peter T.; Park, Yeonjoon; Elliott, James R.

2005-01-01

A bio-nanobattery is an electrical energy storage device that utilizes organic materials and processes on an atomic, or nanometer-scale. The bio-nanobattery under development at NASA s Langley Research Center provides new capabilities for electrical power generation, storage, and distribution as compared to conventional power storage systems. Most currently available electronic systems and devices rely on a single, centralized power source to supply electrical power to a specified location in the circuit. As electronic devices and associated components continue to shrink in size towards the nanometer-scale, a single centralized power source becomes impractical. Small systems, such as these, will require distributed power elements to reduce Joule heating, to minimize wiring quantities, and to allow autonomous operation of the various functions performed by the circuit. Our research involves the development and characterization of a bio-nanobattery using ferritins reconstituted with both an iron core (Fe-ferritin) and a cobalt core (Co-ferritin). Synthesis and characterization of the Co-ferritin and Fe-ferritin electrodes were performed, including reducing capability and the half-cell electrical potentials. Electrical output of nearly 0.5 V for the battery cell was measured. Ferritin utilizing other metallic cores were also considered to increase the overall electrical output. Two dimensional ferritin arrays were produced on various substrates to demonstrate the feasibility of a thin-film nano-scaled power storage system for distributed power storage applications. The bio-nanobattery will be ideal for nanometerscaled electronic applications, due to the small size, high energy density, and flexible thin-film structure. A five-cell demonstration article was produced for concept verification and bio-nanobattery characterization. Challenges to be addressed include the development of a multi-layered thin-film, increasing the energy density, dry-cell bionanobattery development, and selection of ferritin core materials to allow the broadest range of applications. The potential applications for the distributed power system include autonomously-operating intelligent chips, flexible thin-film electronic circuits, nanoelectromechanical systems (NEMS), ultra-high density data storage devices, nanoelectromagnetics, quantum electronic devices, biochips, nanorobots for medical applications and mechanical nano-fabrication, etc.

Flexible self-powered piezo-supercapacitor system for wearable electronics.

PubMed

Gilshteyn, Evgenia P; Amanbaev, Daler; Silibin, Maxim V; Sysa, Artem; Kondrashov, Vladislav A; Anisimov, Anton S; Kallio, Tanja; Nasibulin, Albert G

2018-08-10

The integration of energy harvesting and energy storage in a single device both enables the conversion of ambient energy into electricity and provides a sustainable power source for various electronic devices and systems. On the other hand, mechanical flexibility, coupled with optical transparency of the energy storage devices, is required for many applications, ranging from self-powered rolled-up displays to wearable optoelectronic devices. We integrate a piezoelectric poly(vinylidene-trifluoroethylene) (P(VDF-TrFE)) film into a flexible supercapacitor system to harvest and store the energy. The asymmetric output characteristics of the piezoelectric P(VDF-TrFE) film under mechanical impacts results in effective charging of the supercapacitors. The integrated piezo-supercapacitor exhibits a specific capacitance of 50 F g -1 . The open-circuit voltage of the flexible and transparent supercapacitor reached 500 mV within 20 s during the mechanical action. Our hybridized energy harvesting and storage device can be further extended to provide a sustainable power source for various types of sensors integrated into wearable units.

Electron beam gun with kinematic coupling for high power RF vacuum devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borchard, Philipp

An electron beam gun for a high power RF vacuum device has components joined by a fixed kinematic coupling to provide both precise alignment and high voltage electrical insulation of the components. The kinematic coupling has high strength ceramic elements directly bonded to one or more non-ductile rigid metal components using a high temperature active metal brazing alloy. The ceramic elements have a convex surface that mates with concave grooves in another one of the components. The kinematic coupling, for example, may join a cathode assembly and/or a beam shaping focus electrode to a gun stem, which is preferably composedmore » of ceramic. The electron beam gun may be part of a high power RF vacuum device such as, for example, a gyrotron, klystron, or magnetron.« less

Wideband energy harvesting for piezoelectric devices with linear resonant behavior.

PubMed

Luo, Cheng; Hofmann, Heath F

2011-07-01

In this paper, an active energy harvesting technique for a spring-mass-damper mechanical resonator with piezoelectric electromechanical coupling is investigated. This technique applies a square-wave voltage to the terminals of the device at the same frequency as the mechanical excitation. By controlling the magnitude and phase angle of this voltage, an effective impedance matching can be achieved which maximizes the amount of power extracted from the device. Theoretically, the harvested power can be the maximum possible value, even at off-resonance frequencies. However, in actual implementation, the efficiency of the power electronic circuit limits the amount of power harvested. A power electronic full-bridge converter is built to implement the technique. Experimental results show that the active technique can increase the effective bandwidth by a factor of more than 2, and harvests significantly higher power than rectifier-based circuits at off-resonance frequencies.

Low power signal processing electronics for wearable medical devices.

PubMed

Casson, Alexander J; Rodriguez-Villegas, Esther

2010-01-01

Custom designed microchips, known as Application Specific Integrated Circuits (ASICs), offer the lowest possible power consumption electronics. However, this comes at the cost of a longer, more complex and more costly design process compared to one using generic, off-the-shelf components. Nevertheless, their use is essential in future truly wearable medical devices that must operate for long periods of time from physically small, energy limited batteries. This presentation will demonstrate the state-of-the-art in ASIC technology for providing online signal processing for use in these wearable medical devices.

Thermal electron-tunneling devices as coolers and amplifiers

NASA Astrophysics Data System (ADS)

Su, Shanhe; Zhang, Yanchao; Chen, Jincan; Shih, Tien-Mo

2016-02-01

Nanoscale thermal systems that are associated with a pair of electron reservoirs have been previously studied. In particular, devices that adjust electron tunnels relatively to reservoirs’ chemical potentials enjoy the novelty and the potential. Since only two reservoirs and one tunnel exist, however, designers need external aids to complete a cycle, rendering their models non-spontaneous. Here we design thermal conversion devices that are operated among three electron reservoirs connected by energy-filtering tunnels and also referred to as thermal electron-tunneling devices. They are driven by one of electron reservoirs rather than the external power input, and are equivalent to those coupling systems consisting of forward and reverse Carnot cycles with energy selective electron functions. These previously-unreported electronic devices can be used as coolers and thermal amplifiers and may be called as thermal transistors. The electron and energy fluxes of devices are capable of being manipulated in the same or oppsite directions at our disposal. The proposed model can open a new field in the application of nano-devices.

Thermal electron-tunneling devices as coolers and amplifiers

PubMed Central

Su, Shanhe; Zhang, Yanchao; Chen, Jincan; Shih, Tien-Mo

2016-01-01

Nanoscale thermal systems that are associated with a pair of electron reservoirs have been previously studied. In particular, devices that adjust electron tunnels relatively to reservoirs’ chemical potentials enjoy the novelty and the potential. Since only two reservoirs and one tunnel exist, however, designers need external aids to complete a cycle, rendering their models non-spontaneous. Here we design thermal conversion devices that are operated among three electron reservoirs connected by energy-filtering tunnels and also referred to as thermal electron-tunneling devices. They are driven by one of electron reservoirs rather than the external power input, and are equivalent to those coupling systems consisting of forward and reverse Carnot cycles with energy selective electron functions. These previously-unreported electronic devices can be used as coolers and thermal amplifiers and may be called as thermal transistors. The electron and energy fluxes of devices are capable of being manipulated in the same or oppsite directions at our disposal. The proposed model can open a new field in the application of nano-devices. PMID:26893109

Flexible power fabrics made of carbon nanotubes for harvesting thermoelectricity.

PubMed

Kim, Suk Lae; Choi, Kyungwho; Tazebay, Abdullah; Yu, Choongho

2014-03-25

Thermoelectric energy conversion is very effective in capturing low-grade waste heat to supply electricity particularly to small devices such as sensors, wireless communication units, and wearable electronics. Conventional thermoelectric materials, however, are often inadequately brittle, expensive, toxic, and heavy. We developed both p- and n-type fabric-like flexible lightweight materials by functionalizing the large surfaces and junctions in carbon nanotube (CNT) mats. The poor thermopower and only p-type characteristics of typical CNTs have been converted into both p- and n-type with high thermopower. The changes in the electronic band diagrams of the CNTs were experimentally investigated, elucidating the carrier type and relatively large thermopower values. With our optimized device design to maximally utilize temperature gradients, an electrochromic glucose sensor was successfully operated without batteries or external power supplies, demonstrating self-powering capability. While our fundamental study provides a method of tailoring electronic transport properties, our device-level integration shows the feasibility of harvesting electrical energy by attaching the device to even curved surfaces like human bodies.

Automatic cross-sectioning and monitoring system locates defects in electronic devices

NASA Technical Reports Server (NTRS)

Jacobs, G.; Slaughter, B.

1971-01-01

System consists of motorized grinding and lapping apparatus, sample holder, and electronic control circuit. Low power microscope examines device to pinpoint location of circuit defect, and monitor displays output signal when defect is located exactly.

Shape Memory Polymers for Body Motion Energy Harvesting and Self-Powered Mechanosensing.

PubMed

Liu, Ruiyuan; Kuang, Xiao; Deng, Jianan; Wang, Yi-Cheng; Wang, Aurelia C; Ding, Wenbo; Lai, Ying-Chih; Chen, Jun; Wang, Peihong; Lin, Zhiqun; Qi, H Jerry; Sun, Baoquan; Wang, Zhong Lin

2018-02-01

Growing demand in portable electronics raises a requirement to electronic devices being stretchable, deformable, and durable, for which functional polymers are ideal choices of materials. Here, the first transformable smart energy harvester and self-powered mechanosensation sensor using shape memory polymers is demonstrated. The device is based on the mechanism of a flexible triboelectric nanogenerator using the thermally triggered shape transformation of organic materials for effectively harvesting mechanical energy. This work paves a new direction for functional polymers, especially in the field of mechanosensation for potential applications in areas such as soft robotics, biomedical devices, and wearable electronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications

NASA Astrophysics Data System (ADS)

Erlbacher, T.; Huerner, A.; Bauer, A. J.; Frey, L.

2012-09-01

Anti-fuse devices based on non-volatile memory cells and suitable for power electronic applications are demonstrated for the first time using silicon technology. These devices may be applied as stand alone devices or integrated using standard junction-isolation into application-specific and smart-power integrated circuits. The on-resistance of such devices can be permanently switched by nine orders of magnitude by triggering the anti-fuse with a positive voltage pulse. Extrapolation of measurement data and 2D TCAD process and device simulations indicate that 20 A anti-fuses with 10 mΩ can be reliably fabricated in 0.35 μm technology with a footprint of 2.5 mm2. Moreover, this concept offers distinguished added-values compared to existing mechanical relays, e.g. pre-test, temporary and permanent reset functions, gradual turn-on mode, non-volatility, and extendibility to high voltage capability.

A Survey of Power Electronics Applications in Aerospace Technologies

NASA Technical Reports Server (NTRS)

Kankam, M. David; Elbuluk, Malik E.

2001-01-01

The insertion of power electronics in aerospace technologies is becoming widespread. The application of semiconductor devices and electronic converters, as summarized in this paper, includes the International Space Station, satellite power system, and motor drives in 'more electric' technology applied to aircraft, starter/generators and reusable launch vehicles. Flywheels, servo systems embodying electromechanical actuation, and spacecraft on-board electric propulsion are discussed. Continued inroad by power electronics depends on resolving incompatibility of using variable frequency for 400 Hz-operated aircraft equipment. Dual-use electronic modules should reduce system development cost.

Driver electronics design and control for a total artificial heart linear motor.

PubMed

Unthan, Kristin; Cuenca-Navalon, Elena; Pelletier, Benedikt; Finocchiaro, Thomas; Steinseifer, Ulrich

2018-01-27

For any implantable device size and efficiency are critical properties. Thus, a linear motor for a Total Artificial Heart was optimized with focus on driver electronics and control strategies. Hardware requirements were defined from power supply and motor setup. Four full bridges were chosen for the power electronics. Shunt resistors were set up for current measurement. Unipolar and bipolar switching for power electronics control were compared regarding current ripple and power losses. Here, unipolar switching showed smaller current ripple and required less power to create the necessary motor forces. Based on calculations for minimal power losses Lorentz force was distributed to the actor's four coils. The distribution was determined as ratio of effective magnetic flux through each coil, which was captured by a force test rig. Static and dynamic measurements under physiological conditions analyzed interaction of control and hardware and all efficiencies were over 89%. In conclusion, the designed electronics, optimized control strategy and applied current distribution create the required motor force and perform optimal under physiological conditions. The developed driver electronics and control offer optimized size and efficiency for any implantable or portable device with multiple independent motor coils. Graphical Abstract ᅟ.

Development of Multi-Functional Voltage Restore System

NASA Astrophysics Data System (ADS)

Suzuki, Satoshi; Ueda, Yoshinobu; Koganezawa, Takehisa; Ogihara, Yoshinori; Mori, Kenjiro; Fukazu, Naoaki

Recently, with the dawn of the electric deregulation, the installation of distributed generation with power electronics device has grown. This current causes a greater concern of power quality, primarily voltage disturbance for power companies, and their interest in power quality is peaking. Utilities are also interested in keeping their customers satisfied, as well as keeping them on-line and creating more revenue for the utility. As a countermeasure against the above surroundings, a variety type of devices based on power electronics has been developed to protect customers' load from power line voltage disturbance. One of them is the series type voltage restore. The series device is an active device, designed to provide a pure sinusoidal load voltage at all times, correcting voltage disturbance. Series type device compensates for voltage anomalies by inserting the ‘missing’ voltage onto the line through insertion transformer and inverter. This paper shows the setting guideline of target level to compensate voltage disturbance, that is, voltage dip, voltage harmonics, voltage imbalance and voltage flicker, and the design approach of the prototype of series voltage restores to accomplish the required compensation level. The prototype system gives satisfactory compensation performance through evaluation tests, which confirm the validity and effectiveness of the system.

Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices

NASA Astrophysics Data System (ADS)

Gamzina, Diana

Diana Gamzina March 2016 Mechanical and Aerospace Engineering Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices Abstract A methodology for performing thermo-mechanical design and analysis of high frequency and high average power vacuum electron devices is presented. This methodology results in a "first-pass" engineering design directly ready for manufacturing. The methodology includes establishment of thermal and mechanical boundary conditions, evaluation of convective film heat transfer coefficients, identification of material options, evaluation of temperature and stress field distributions, assessment of microscale effects on the stress state of the material, and fatigue analysis. The feature size of vacuum electron devices operating in the high frequency regime of 100 GHz to 1 THz is comparable to the microstructure of the materials employed for their fabrication. As a result, the thermo-mechanical performance of a device is affected by the local material microstructure. Such multiscale effects on the stress state are considered in the range of scales from about 10 microns up to a few millimeters. The design and analysis methodology is demonstrated on three separate microwave devices: a 95 GHz 10 kW cw sheet beam klystron, a 263 GHz 50 W long pulse wide-bandwidth sheet beam travelling wave tube, and a 346 GHz 1 W cw backward wave oscillator.

Transcap: A new integrated hybrid supercapacitor and electrolyte-gated transistor device (Presentation Recording)

NASA Astrophysics Data System (ADS)

Santato, Clara

2015-10-01

The boom in multifunctional, flexible, and portable electronics and the increasing need of low-energy cost and autonomy for applications ranging from wireless sensor networks for smart environments to biomedical applications are triggering research efforts towards the development of self-powered sustainable electronic devices. Within this context, the coupling of electronic devices (e.g. sensors, transistors) with small size energy storage systems (e.g. micro-batteries or micro-supercapacitors) is actively pursued. Micro-electrochemical supercapacitors are attracting much attention in electronics for their capability of delivering short power pulses with high stability over repeated charge/discharge cycling. For their high specific pseudocapacitance, electronically conducting polymers are well known as positive materials for hybrid supercapacitors featuring high surface carbon negative electrodes. The processability of both polymer and carbon is of great relevance for the development of flexible miniaturised devices. Electronically conducting polymers are even well known to feature an electronic conductivity that depends on their oxidation (p-doped state) and that it is modulated by the polymer potential. This property and the related pseudocapacitive response make polymer very attracting channel materials for electrolyte-gated (EG) transistors. Here, we propose a novel concept of "Trans-capacitor", an integrated device that exhibits the storage properties of a polymer/carbon hybrid supercapacitor and the low-voltage operation of an electrolyte-gated transistor.

GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

NASA Astrophysics Data System (ADS)

Liu, Dong; Sun, Huarui; Pomeroy, James W.; Francis, Daniel; Faili, Firooz; Twitchen, Daniel J.; Kuball, Martin

2015-12-01

The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.

Electronics for Deep Space Cryogenic Applications

NASA Technical Reports Server (NTRS)

Patterson, R. L.; Hammond, A.; Dickman, J. E.; Gerber, S. S.; Elbuluk, M. E.; Overton, E.

2002-01-01

Deep space probes and planetary exploration missions require electrical power management and control systems that are capable of efficient and reliable operation in very cold temperature environments. Typically, in deep space probes, heating elements are used to keep the spacecraft electronics near room temperature. The utilization of power electronics designed for and operated at low temperature will contribute to increasing efficiency and improving reliability of space power systems. At NASA Glenn Research Center, commercial-off-the-shelf devices as well as developed components are being investigated for potential use at low temperatures. These devices include semiconductor switching devices, magnetics, and capacitors. Integrated circuits such as digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being evaluated. In this paper, results will be presented for selected analog-to-digital converters, oscillators, DC/DC converters, and pulse width modulation (PWM) controllers.

Numerical characterization of the edge transport conditions and limiter fluxes of the HIDRA stellarator

NASA Astrophysics Data System (ADS)

Marcinko, Steven; Curreli, Davide

2018-02-01

The Hybrid Illinois Device for Research and Applications (HIDRA) is a new device for education and Plasma-Material Interaction research at the University of Illinois at Urbana-Champaign. In advance of its first operational campaign, EMC3-EIRENE simulations have been run on the device. EMC3-EIRENE has been modified to calculate a per-plasma-cell relaxed Bohm-like diffusivity simultaneously with the electron temperature at each iteration. In our characterization, the electron temperature, diffusivity, heat fluxes, and particle fluxes have been obtained for varying power levels on a HIDRA magnetic grid, and scaling laws have been extracted, using constraints from previous experimental data taken when the device was operated in Germany (WEGA facility). Peak electron temperatures and heat fluxes were seen to follow a power-law dependence on the deposited radiofrequency (RF) power of type f (PR F)∝a PRF b , with typical exponents in the range of b ˜0.55 to 0.60. Higher magnetic fields have the tendency to linearize the heat flux dependence on the RF power, with exponents in the range of b ˜ 0.75. Particle fluxes are seen to saturate first, and then slightly decline for RF powers above 120 kW in the low-field case and 180 kW in the high-field case.

[Test of thermal deformation for electronic devices of high thermal reliability].

PubMed

Li, Hai-yuan; Li, Bao-ming

2002-06-01

Thermal deformation can be caused by high partial heat flux and greatly reduce thermal reliability of electronic devices. In this paper, an attempt is made to measure the thermal deformation of high power electronic devices under working condition using laser holographic interferometry with double exposure. Laser holographic interferometry is an untouched measurement with measurement precision up to micron dimension. The electronic device chosen for measurement is a type of solid state relay which is used for ignition of rockets. The output circuit of the solid state relay is made up of a MOSFET chip and the power density of the chip can reach high value. In particular situations thermal deformation and stress may significantly influence working performance of the solid state relay. The bulk deformation of the chip and its mount is estimated by number of interferential stripes on chip surface. While thermal stress and deformation can be estimated by curvature of interferential stripes on chip surface. Experimental results indicate that there are more interferential stripes on chip surface and greater flexural degree of stripes under high power. Therefore, these results reflect large out-of-plain displacement and deformed size of the chip with the increase of load current.

From nanoelectronics to nano-spintronics.

PubMed

Wang, Kang L; Ovchinnikov, Igor; Xiu, Faxian; Khitun, Alex; Bao, Ming

2011-01-01

Today's electronics uses electron charge as a state variable for logic and computing operation, which is often represented as voltage or current. In this representation of state variable, carriers in electronic devices behave independently even to a few and single electron cases. As the scaling continues to reduce the physical feature size and to increase the functional throughput, two most outstanding limitations and major challenges, among others, are power dissipation and variability as identified by ITRS. This paper presents the expose, in that collective phenomena, e.g., spintronics using appropriate order parameters of magnetic moment as a state variable may be considered favorably for a new room-temperature information processing paradigm. A comparison between electronics and spintronics in terms of variability, quantum and thermal fluctuations will be presented. It shows that the benefits of the scalability to smaller sizes in the case of spintronics (nanomagnetics) include a much reduced variability problem as compared with today's electronics. In addition, another advantage of using nanomagnets is the possibility of constructing nonvolatile logics, which allow for immense power savings during system standby. However, most of devices with magnetic moment usually use current to drive the devices and consequently, power dissipation is a major issue. We will discuss approaches of using electric-field control of ferromagnetism in dilute magnetic semiconductor (DMS) and metallic ferromagnetic materials. With the DMSs, carrier-mediated transition from paramagnetic to ferromagnetic phases make possible to have devices work very much like field effect transistor, plus the non-volatility afforded by ferromagnetism. Then we will describe new possibilities of the use of electric field for metallic materials and devices: Spin wave devices with multiferroics materials. We will also further describe a potential new method of electric field control of metallic ferromagnetism via field effect of the Thomas Fermi surface layer.

Photonic-powered cable assembly

DOEpatents

Sanderson, Stephen N.; Appel, Titus James; Wrye, IV, Walter C.

2013-01-22

A photonic-cable assembly includes a power source cable connector ("PSCC") coupled to a power receive cable connector ("PRCC") via a fiber cable. The PSCC electrically connects to a first electronic device and houses a photonic power source and an optical data transmitter. The fiber cable includes an optical transmit data path coupled to the optical data transmitter, an optical power path coupled to the photonic power source, and an optical feedback path coupled to provide feedback control to the photonic power source. The PRCC electrically connects to a second electronic device and houses an optical data receiver coupled to the optical transmit data path, a feedback controller coupled to the optical feedback path to control the photonic power source, and a photonic power converter coupled to the optical power path to convert photonic energy received over the optical power path to electrical energy to power components of the PRCC.

Photonic-powered cable assembly

DOEpatents

Sanderson, Stephen N; Appel, Titus James; Wrye, IV, Walter C

2014-06-24

A photonic-cable assembly includes a power source cable connector ("PSCC") coupled to a power receive cable connector ("PRCC") via a fiber cable. The PSCC electrically connects to a first electronic device and houses a photonic power source and an optical data transmitter. The fiber cable includes an optical transmit data path coupled to the optical data transmitter, an optical power path coupled to the photonic power source, and an optical feedback path coupled to provide feedback control to the photonic power source. The PRCC electrically connects to a second electronic device and houses an optical data receiver coupled to the optical transmit data path, a feedback controller coupled to the optical feedback path to control the photonic power source, and a photonic power converter coupled to the optical power path to convert photonic energy received over the optical power path to electrical energy to power components of the PRCC.

Collaborative designing and job satisfaction of airplane manufacturing engineers: A case study

NASA Astrophysics Data System (ADS)

Johnson, Michael David, Sr.

The group III-nitride system of materials has had considerable commercial success in recent years in the solid state lighting (SSL) and power electronics markets. The need for high efficient general lighting applications has driven research into InGaN based blue light emitting diodes (LEDs), and demand for more efficient power electronics for telecommunications has driven research into AlGaN based high electron mobility transistors (HEMTs). However, the group III-nitrides material properties make them attractive for several other applications that have not received as much attention. This work focuses on developing group III-nitride based devices for novel applications. GaN is a robust, chemically inert, piezoelectric material, making it an ideal candidate for surface acoustic wave (SAW) devices designed for high temperature and/or harsh environment sensors. In this work, SAW devices based on GaN are developed for use in high temperature gas or chemical sensor applications. To increase device sensitivity, while maintaining a simple one-step photolithography fabrication process, devices were designed to operate at high harmonic frequencies. This allows for GHz regime operation without sub-micron fabrication. One potential market for this technology is continuous emissions monitoring of combustion gas vehicles. In addition to SAW devices, high electron mobility transistors (HEMTs) were developed. The epitaxial structure was characterized and the 2-D electron gas concentrations were simulated and compared to experimental results. Device fabrication processes were developed and are outlined. Fabricated devices were electrically measured and device performance is discussed.

Low-Noise Wide Bandwith, Hot Electron Bolometer Mixers for Submillimeter Wavelengths

NASA Technical Reports Server (NTRS)

McGrath, W. R.

1995-01-01

Recently a novel superconductive hot-electron micro-bolometer has been proposed which is both fast and sensitive (D. E. Prober, Appl. Phys. Lett. 62, 2119, 1993). This device has several important properties which make it useful as a heterodyne sensor for radioastronomy applications at frequencies above 1 THz. The thermal response time of the device is fast enough, several 10's of picoseconds, to allow for IF's of several GHz. This bolometer mixer should operate well up to at least 10 THz. There is no energy gap limitation as in an SIS mixer, since the mixing process relies on heating of the electron gas. In fact, rf power is absorbed more uniformly above the gap frequency. The mixer noise should be near quantum-limited, and the local oscillator (LO) power requirement is very low: / 10 nW for a Nb device. One of the unique features of this device is that it employs rapid electron diffusion into a normal metal, rather than phonon emission, as the thermal conductance that cools the heated electrons. In order for diffusion to dominate over phonon emission, the device must be short, less than 0.5.

Theoretical insights into multiscale electronic processes in organic photovoltaics

NASA Astrophysics Data System (ADS)

Tretiak, Sergei

Present day electronic devices are enabled by design and implementation of precise interfaces that control the flow of charge carriers. This requires robust and predictive multiscale approaches for theoretical description of underlining complex phenomena. Combined with thorough experimental studies such approaches provide a reliable estimate of physical properties of nanostructured materials and enable a rational design of devices. From this perspective I will discuss first principle modeling of small-molecule bulk-heterojunction organic solar cells and push-pull chromophores for tunable-color organic light emitters. The emphasis is on electronic processes involving intra- and intermolecular energy or charge transfer driven by strong electron-phonon coupling inherent to pi-conjugated systems. Finally I will describe how precise manipulation and control of organic-organic interfaces in a photovoltaic device can increase its power conversion efficiency by 2-5 times in a model bilayer system. Applications of these design principles to practical architectures like bulk heterojunction devices lead to an enhancement in power conversion efficiency from 4.0% to 7.0%. These interface manipulation strategies are universally applicable to any donor-acceptor interface, making them both fundamentally interesting and technologically important for achieving high efficiency organic electronic devices.

Inverted organic electronic and optoelectronic devices

NASA Astrophysics Data System (ADS)

Small, Cephas E.

The research and development of organic electronics for commercial application has received much attention due to the unique properties of organic semiconductors and the potential for low-cost high-throughput manufacturing. For improved large-scale processing compatibility and enhanced device stability, an inverted geometry has been employed for devices such as organic light emitting diodes and organic photovoltaic cells. These improvements are attributed to the added flexibility to incorporate more air-stable materials into the inverted device geometry. However, early work on organic electronic devices with an inverted geometry typically showed reduced device performance compared to devices with a conventional structure. In the case of organic light emitting diodes, inverted devices typically show high operating voltages due to insufficient carrier injection. Here, a method for enhancing hole injection in inverted organic electronic devices is presented. By incorporating an electron accepting interlayer into the inverted device, a substantial enhancement in hole injection efficiency was observed as compared to conventional devices. Through a detailed carrier injection study, it is determined that the injection efficiency enhancements in the inverted devices are due to enhanced charge transfer at the electron acceptor/organic semiconductor interface. A similar situation is observed for organic photovoltaic cells, in which devices with an inverted geometry show limited carrier extraction in early studies. In this work, enhanced carrier extraction is demonstrated for inverted polymer solar cells using a surface-modified ZnO-polymer composite electron-transporting layer. The insulating polymer in the composite layer inhibited aggregation of the ZnO nanoparticles, while the surface-modification of the composite interlayer improved the electronic coupling with the photoactive layer. As a result, inverted polymer solar cells with power conversion efficiencies of over 8% were obtained. To further study carrier extraction in inverted polymer solar cells, the active layer thickness dependence of the efficiency was investigated. For devices with active layer thickness < 200 nm, power conversion efficiencies over 8% was obtained. This result is important for demonstrating improved large-scale processing compatibility. Above 200 nm, significant reduction in cell efficiency were observed. A detailed study of the loss processes that contributed to the reduction in efficiency for thick-film devices are presented.

Chemical Vapor Deposition Of Silicon Carbide

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

1993-01-01

Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

DOE PAGES

Kaplar, R. J.; Allerman, A. A.; Armstrong, A. M.; ...

2016-12-20

“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludesmore » with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.« less

Graded junction termination extensions for electronic devices

NASA Technical Reports Server (NTRS)

Merrett, J. Neil (Inventor); Isaacs-Smith, Tamara (Inventor); Sheridan, David C. (Inventor); Williams, John R. (Inventor)

2006-01-01

A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

Graded junction termination extensions for electronic devices

NASA Technical Reports Server (NTRS)

Merrett, J. Neil (Inventor); Isaacs-Smith, Tamara (Inventor); Sheridan, David C. (Inventor); Williams, John R. (Inventor)

2007-01-01

A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

Power-Efficient, High-Current-Density, Long-Life Thermionic Cathode Developed for Microwave Amplifier Applications

NASA Technical Reports Server (NTRS)

Wintucky, Edwin G.

2002-01-01

A power-efficient, miniature, easily manufactured, reservoir-type barium-dispenser thermionic cathode has been developed that offers the significant advantages of simultaneous high electron-emission current density (>2 A/sq cm) and very long life (>100,000 hr of continuous operation) when compared with the commonly used impregnated-type barium-dispenser cathodes. Important applications of this cathode are a wide variety of microwave and millimeter-wave vacuum electronic devices, where high output power and reliability (long life) are essential. We also expect it to enable the practical development of higher purveyance electron guns for lower voltage and more reliable device operation. The low cathode heater power and reduced size and mass are expected to be particularly beneficial in traveling-wave-tube amplifiers (TWTA's) for space communications, where future NASA mission requirements include smaller onboard spacecraft systems, higher data transmission rates (high frequency and output power) and greater electrical efficiency.

Using Wireless Power Meters to Measure Energy Use of Miscellaneous and Electronic Devices in Buildings

DOE Office of Scientific and Technical Information (OSTI.GOV)

UC Berkeley, Berkeley, CA USA; Brown, Richard; Lanzisera, Steven

2011-05-24

Miscellaneous and electronic devices consume about one-third of the primary energy used in U.S. buildings, and their energy use is increasing faster than other end-uses. Despite the success of policies, such as Energy Star, that promote more efficient miscellaneous and electronic products, much remains to be done to address the energy use of these devices if we are to achieve our energy and carbon reduction goals. Developing efficiency strategies for these products depends on better data about their actual usage, but very few studies have collected field data on the long-term energy used by a large sample of devices duemore » to the difficulty and expense of collecting device-level energy data. This paper describes the development of an improved method for collecting device-level energy and power data using small, relatively inexpensive wireless power meters. These meters form a mesh network based on Internet standard protocols and can form networks of hundreds of metering points in a single building. Because the meters are relatively inexpensive and do not require manual data downloading, they can be left in the field for months or years to collect long time-series energy use data. In addition to the metering technology, we also describe a field protocol used to collect comprehensive, robust data on the miscellaneous and electronic devices in a building. The paper presents sample results from several case study buildings, in which all the plug-in devices for several homes were metered, and a representative sample of several hundred plug-in devices in a commercial office building were metered for several months.« less

Developments in space power components for power management and distribution

NASA Technical Reports Server (NTRS)

Renz, D. D.

1984-01-01

Advanced power electronic components development for space applications is discussed. The components described include transformers, inductors, semiconductor devices such as transistors and diodes, remote power controllers, and transmission lines.

Summary: Disabled Submarine Heat Stress Conference

DTIC Science & Technology

2009-09-11

by dry bulb thermometer and humidity using either a sling psychrometer or a portable battery-powered electronic device providing a direct readout of...and sling psychrometer in each compartment 3) One battery-powered electronic thermometer/hygrometer in each compartment Heat Stress When-To

Electronic ripple indicator

NASA Technical Reports Server (NTRS)

Davidson, J. K.; Houck, W. H.

1971-01-01

Electronic circuit for monitoring excessive ripple voltage on dc power lines senses voltage variations from few millivolts to maximum of 10 volts rms. Instrument is used wherever power supply fluctuations might endanger system operations or damage equipment. Device is inexpensive and easily packaged in small chassis.

Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices

NASA Astrophysics Data System (ADS)

Zanoni, Enrico; Meneghesso, Gaudenzio; Menozzi, Roberto

2000-03-01

Hot electron in III-V FETs can be indirectly monitored by measuring the current coming out from the gate when the device is biased at high electric fields. This negative current is due to the collection of holes generated by impact ionization in the gate-to drain region. Electroluminescence represents a powerful tool in order to characterize not only hot electrons but also material properties. By using spatially resolved emission microscopy it is possible to show that the light due to cold electron/hole recombination is emitted between the gate and the source (low electric field region), while the contribution due to hot electrons is emitted between the gate and the drain (high electric field region). Deep-traps created in the device by hot carriers can be analysed by means of drain current deep level transient spectroscopy and by transconductance frequency dispersion. Cathodoluminescence, optical beam induced current, X-ray spectroscopy, electron energy loss spectroscopy in combination with a transmission electron microscopy are powerful tools in order to identify and localize surface modification following hot-electron stress tests.

Microfabricated Millimeter-Wave High-Power Vacuum Electronic Amplifiers

DTIC Science & Technology

2015-01-01

Applications filed 2012). In spite of the challenges, high power sources of electromagnetic radiation are needed in the mmW bands for advanced DoD...Research Laboratory is demonstrating and developing millimeter-wave vacuum electronic traveling wave tube amplifiers at W- and G- band in the 10’ s to 100... s of watts power range at several percent instantaneous bandwidth. Keywords: Traveling wave tube; millimeter wave; vacuum electron device

Basic Mechanisms of Radiation Effects in Electronic Materials and Devices

DTIC Science & Technology

1987-09-01

power as function of particle energy for electrons and protons Incident on silic,,n...8217-Mev 0000 Neutrons0 0 Fluenoe n/oma e 1-MeV equivalent fluenos n/orm DlSlLAOUMllW Ionizing radltlon O Stopping power (linear energy MeV/(g/om...from the interaction of radiation energy that goes Into ionization Is given by the stop- with electronic materials are Ionization (primarily ping power

Prognostics of Power Electronics, Methods and Validation Experiments

NASA Technical Reports Server (NTRS)

Kulkarni, Chetan S.; Celaya, Jose R.; Biswas, Gautam; Goebel, Kai

2012-01-01

Abstract Failure of electronic devices is a concern for future electric aircrafts that will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. As a result, investigation of precursors to failure in electronics and prediction of remaining life of electronic components is of key importance. DC-DC power converters are power electronics systems employed typically as sourcing elements for avionics equipment. Current research efforts in prognostics for these power systems focuses on the identification of failure mechanisms and the development of accelerated aging methodologies and systems to accelerate the aging process of test devices, while continuously measuring key electrical and thermal parameters. Preliminary model-based prognostics algorithms have been developed making use of empirical degradation models and physics-inspired degradation model with focus on key components like electrolytic capacitors and power MOSFETs (metal-oxide-semiconductor-field-effect-transistor). This paper presents current results on the development of validation methods for prognostics algorithms of power electrolytic capacitors. Particularly, in the use of accelerated aging systems for algorithm validation. Validation of prognostics algorithms present difficulties in practice due to the lack of run-to-failure experiments in deployed systems. By using accelerated experiments, we circumvent this problem in order to define initial validation activities.

Hybrid thermionic-photovoltaic converter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Datas, A.

2016-04-04

A conceptual device for the direct conversion of heat into electricity is presented. This concept hybridizes thermionic (TI) and thermophotovoltaic (TPV) energy conversion in a single thermionic-photovoltaic (TIPV) solid-state device. This device transforms into electricity both the electron and photon fluxes emitted by an incandescent surface. This letter presents an idealized analysis of this device in order to determine its theoretical potential. According to this analysis, the key advantage of this converter, with respect to either TPV or TI, is the higher power density in an extended temperature range. For low temperatures, TIPV performs like TPV due to the negligiblemore » electron flux. On the contrary, for high temperatures, TIPV performs like TI due to the great enhancement of the electron flux, which overshadows the photon flux contribution. At the intermediate temperatures, ∼1650 K in the case of this particular study, I show that the power density potential of TIPV converter is twice as great as that of TPV and TI. The greatest impact concerns applications in which the temperature varies in a relatively wide range, for which averaged power density enhancement above 500% is attainable.« less

Slot-Antenna/Permanent-Magnet Device for Generating Plasma

NASA Technical Reports Server (NTRS)

Foster, John E.

2007-01-01

A device that includes a rectangular-waveguide/slot-antenna structure and permanent magnets has been devised as a means of generating a substantially uniform plasma over a relatively large area, using relatively low input power and a low gas flow rate. The device utilizes electron cyclotron resonance (ECR) excited by microwave power to efficiently generate plasma in a manner that is completely electrodeless in the sense that, in principle, there is no electrical contact between the plasma and the antenna. Plasmas generated by devices like this one are suitable for use as sources of ions and/or electrons for diverse material-processing applications (e.g., etching or deposition) and for ion thrusters. The absence of plasma/electrode contact essentially prevents plasma-induced erosion of the antenna, thereby also helping to minimize contamination of the plasma and of objects exposed to the plasma. Consequently, the operational lifetime of the rectangular-waveguide/ slot-antenna structure is long and the lifetime of the plasma source is limited by the lifetime of the associated charged-particle-extraction grid (if used) or the lifetime of the microwave power source. The device includes a series of matched radiating slot pairs that are distributed along the length of a plasma-source discharge chamber (see figure). This arrangement enables the production of plasma in a distributed fashion, thereby giving rise to a uniform plasma profile. A uniform plasma profile is necessary for uniformity in any electron- or ion-extraction electrostatic optics. The slotted configuration of the waveguide/ antenna structure makes the device scalable to larger areas and higher powers. All that is needed for scaling up is the attachment of additional matched radiating slots along the length of the discharge chamber. If it is desired to make the power per slot remain constant in scaling up, then the input microwave power must be increased accordingly. Unlike in prior ECR microwave plasma-generating devices, there is no need for an insulating window on the antenna. Such windows are sources of contamination and gradually become ineffective as they become coated with erosion products over time. These characteristics relegate prior ECR microwave plasma-generating devices to non-ion beam, non-deposition plasma applications. In contrast, the lack of need for an insulating window in the present device makes it possible to use the device in both ion-beam (including deposition) and electron-beam applications. The device is designed so that ECR takes place above each slot and the gradient of the magnetic field at each slot is enough to prevent backflow of plasma.

Design of spherical electron gun for ultra high frequency, CW power inductive output tube

NASA Astrophysics Data System (ADS)

Kaushik, Meenu; Joshi, L. M.

2016-03-01

Inductive Output Tube (IOT) is an amplifier that usually operates in UHF range. It is an electron tube whose basic structure is similar to conventional vacuum devices. This device is widely used in broadcast applications but is now being explored for scientific applications also specifically, particle accelerators and fusion plasma heating purposes. The paper describes the design approach of a spherical gridded electron gun of a 500 MHz, 100 kW CW power IOT. The electron gun structure has been simulated and optimized for operating voltage and current of 40kV and 3.5 A respectively. The electromagnetic analysis of this spherical electron gun has been carried out in CST and TRAK codes.

Design of spherical electron gun for ultra high frequency, CW power inductive output tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaushik, Meenu, E-mail: mkceeri@gmail.com; Joshi, L. M., E-mail: lmj1953@gmail.com; Academy of Scientific and Innovative Research

Inductive Output Tube (IOT) is an amplifier that usually operates in UHF range. It is an electron tube whose basic structure is similar to conventional vacuum devices. This device is widely used in broadcast applications but is now being explored for scientific applications also specifically, particle accelerators and fusion plasma heating purposes. The paper describes the design approach of a spherical gridded electron gun of a 500 MHz, 100 kW CW power IOT. The electron gun structure has been simulated and optimized for operating voltage and current of 40kV and 3.5 A respectively. The electromagnetic analysis of this spherical electron gunmore » has been carried out in CST and TRAK codes.« less

CHARGING OF DEVICES BY MICROWAVE POWER BEAMING

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A. (Inventor)

2005-01-01

A system for providing wireless, charging power and/or primary power to electronic/electrical devices is described whereby microwave energy is employed. Microwave energy is focused by a power transmitter comprising one or more adaptively-phased microwave array emitters onto a device to be charged. Rectennas within the device to be charged receive and rectify the microwave energy and use it for battery charging and/or for primary power. A locator signal generated by the device to be charged is analyzed by the system to determine the location of the device to be charged relative to the microwave array emitters, permitting thc microwave energy to be directly specifically towards the device to be charged. Backscatter detectors respond to backscatter energy reflected off of any obstacle between the device to be charged and the microwave array emitters. Power to any obstructed microwave array emitter is reduced until the obstruction is removed. Optionally, data can be modulated onto microwave energy beams produced by the array emitter and demodulated by the device, thereby providing means of data communication from the power transmitter to the device. Similarly, data can be modulated onto the locator signal and demodulated in the power transmitter, thereby providing means of data communication from the device to the power transmitter.

Nanogenerator-based dual-functional and self-powered thin patch loudspeaker or microphone for flexible electronics.

PubMed

Li, Wei; Torres, David; Díaz, Ramón; Wang, Zhengjun; Wu, Changsheng; Wang, Chuan; Lin Wang, Zhong; Sepúlveda, Nelson

2017-05-16

Ferroelectret nanogenerators were recently introduced as a promising alternative technology for harvesting kinetic energy. Here we report the device's intrinsic properties that allow for the bidirectional conversion of energy between electrical and mechanical domains; thus extending its potential use in wearable electronics beyond the power generation realm. This electromechanical coupling, combined with their flexibility and thin film-like form, bestows dual-functional transducing capabilities to the device that are used in this work to demonstrate its use as a thin, wearable and self-powered loudspeaker or microphone patch. To determine the device's performance and applicability, sound pressure level is characterized in both space and frequency domains for three different configurations. The confirmed device's high performance is further validated through its integration in three different systems: a music-playing flag, a sound recording film and a flexible microphone for security applications.

Nanogenerator-based dual-functional and self-powered thin patch loudspeaker or microphone for flexible electronics

NASA Astrophysics Data System (ADS)

Li, Wei; Torres, David; Díaz, Ramón; Wang, Zhengjun; Wu, Changsheng; Wang, Chuan; Lin Wang, Zhong; Sepúlveda, Nelson

2017-05-01

Ferroelectret nanogenerators were recently introduced as a promising alternative technology for harvesting kinetic energy. Here we report the device's intrinsic properties that allow for the bidirectional conversion of energy between electrical and mechanical domains; thus extending its potential use in wearable electronics beyond the power generation realm. This electromechanical coupling, combined with their flexibility and thin film-like form, bestows dual-functional transducing capabilities to the device that are used in this work to demonstrate its use as a thin, wearable and self-powered loudspeaker or microphone patch. To determine the device's performance and applicability, sound pressure level is characterized in both space and frequency domains for three different configurations. The confirmed device's high performance is further validated through its integration in three different systems: a music-playing flag, a sound recording film and a flexible microphone for security applications.

Nanogenerator-based dual-functional and self-powered thin patch loudspeaker or microphone for flexible electronics

PubMed Central

Li, Wei; Torres, David; Díaz, Ramón; Wang, Zhengjun; Wu, Changsheng; Wang, Chuan; Lin Wang, Zhong; Sepúlveda, Nelson

2017-01-01

Ferroelectret nanogenerators were recently introduced as a promising alternative technology for harvesting kinetic energy. Here we report the device's intrinsic properties that allow for the bidirectional conversion of energy between electrical and mechanical domains; thus extending its potential use in wearable electronics beyond the power generation realm. This electromechanical coupling, combined with their flexibility and thin film-like form, bestows dual-functional transducing capabilities to the device that are used in this work to demonstrate its use as a thin, wearable and self-powered loudspeaker or microphone patch. To determine the device's performance and applicability, sound pressure level is characterized in both space and frequency domains for three different configurations. The confirmed device's high performance is further validated through its integration in three different systems: a music-playing flag, a sound recording film and a flexible microphone for security applications. PMID:28508862

MIMIC-compatible GaAs and InP field effect controlled transferred electron (FECTED) oscillators

NASA Astrophysics Data System (ADS)

Scheiber, Helmut; Luebke, Kurt; Diskus, Christian G.; Thim, Hartwig W.; Gruetzmacher, D.

1989-12-01

A MIMIC-(millimeter and microwave integrated circuit) compatible transferred electron oscillator is investigated which utilizes the frequency-independent negative resistance of the stationary charge dipole domain that forms in the channel of a MESFET. The device structure, analysis, and simulation are described. Devices fabricated from GaAs and InP exhibit very high power levels of 56 mW at 29 GHz and 55 mW at 34 GHz, respectively. Continuous wave power levels are somewhat lower (30 mW).

Fixation of operating point and measurement of turn on characteristics of IGBT F4-75R06W1E3

NASA Astrophysics Data System (ADS)

Haseena, A.; Subhash Joshi T., G.; George, Saly

2018-05-01

For the proficient operation of the Power electronic circuit, signal level performance of power electronic devices are very important. For getting good signal level characteristics, fixing operating point is very critical. Device deviates from the typical characteristics given in the datasheet due to the presence of stray components in the circuit lay out. Fixation of operating point of typical silicon IGBT and its turn on characteristics is discussed in this paper.

Proceedings of the Conference on High-temperature Electronics

NASA Technical Reports Server (NTRS)

1981-01-01

The development of electronic devices for use in high temperature environments is addressed. The instrumentational needs of planetary exploration, fossil and nuclear power reactors, turbine engine monitoring, and well logging are defined. Emphasis is place on the fabrication and performance of materials and semiconductor devices, circuits and systems and packaging.

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

NASA Technical Reports Server (NTRS)

1996-01-01

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Electrothermal energy conversion using electron gas volumetric change inside semiconductors

NASA Astrophysics Data System (ADS)

Yazawa, K.; Shakouri, A.

2016-07-01

We propose and analyze an electrothermal energy converter using volumetric changes in non-equilibrium electron gas inside semiconductors. The geometric concentration of electron gas under an electric field increases the effective pressure of the electrons, and then a barrier filters out cold electrons, acting like a valve. Nano- and micro-scale features enable hot electrons to arrive at the contact in a short enough time to avoid thermalization with the lattice. Key length and time scales, preliminary device geometry, and anticipated efficiency are estimated for electronic analogs of Otto and Brayton power generators and Joule-Thomson micro refrigerators on a chip. The power generators convert the energy of incident photons from the heat source to electrical current, and the refrigerator can reduce the temperature of electrons in a semiconductor device. The analytic calculations show that a large energy conversion efficiency or coefficient of performance may be possible.

Self-similar and fractal design for stretchable electronics

DOEpatents

Rogers, John A.; Fan, Jonathan; Yeo, Woon-Hong; Su, Yewang; Huang, Yonggang; Zhang, Yihui

2017-04-04

The present invention provides electronic circuits, devices and device components including one or more stretchable components, such as stretchable electrical interconnects, electrodes and/or semiconductor components. Stretchability of some of the present systems is achieved via a materials level integration of stretchable metallic or semiconducting structures with soft, elastomeric materials in a configuration allowing for elastic deformations to occur in a repeatable and well-defined way. The stretchable device geometries and hard-soft materials integration approaches of the invention provide a combination of advance electronic function and compliant mechanics supporting a broad range of device applications including sensing, actuation, power storage and communications.

5 CFR 1201.52 - Public hearings.

Code of Federal Regulations, 2013 CFR

2013-01-01

.... Any objections to the order will be made a part of the record. (b) Electronic devices. Absent express... room; all cell phones, text devices, and all other two-way communications devices shall be powered off in the hearing room. Further, no cameras, recording devices, and/or transmitting devices may be...

5 CFR 1201.52 - Public hearings.

Code of Federal Regulations, 2014 CFR

2014-01-01

.... Any objections to the order will be made a part of the record. (b) Electronic devices. Absent express... room; all cell phones, text devices, and all other two-way communications devices shall be powered off in the hearing room. Further, no cameras, recording devices, and/or transmitting devices may be...

Design and Implementation of RF Energy Harvesting System for Low-Power Electronic Devices

NASA Astrophysics Data System (ADS)

Uzun, Yunus

2016-08-01

Radio frequency (RF) energy harvester systems are a good alternative for energizing of low-power electronics devices. In this work, an RF energy harvester is presented to obtain energy from Global System for Mobile Communications (GSM) 900 MHz signals. The energy harvester, consisting of a two-stage Dickson voltage multiplier circuit and L-type impedance matching circuits, was designed, simulated, fabricated and tested experimentally in terms of its performance. Simulation and experimental works were carried out for various input power levels, load resistances and input frequencies. Both simulation and experimental works have been carried out for this frequency band. An efficiency of 45% is obtained from the system at 0 dBm input power level using the impedance matching circuit. This corresponds to the power of 450 μW and this value is sufficient for many low-power devices. The most important parameters affecting the efficiency of the RF energy harvester are the input power level, frequency band, impedance matching and voltage multiplier circuits, load resistance and the selection of diodes. RF energy harvester designs should be optimized in terms of these parameters.

Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry

PubMed Central

Kumarasinghe, Chathurangi S.; Premaratne, Malin; Gunapala, Sarath D.; Agrawal, Govind P.

2016-01-01

We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors. PMID:26887286

Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry.

PubMed

Kumarasinghe, Chathurangi S; Premaratne, Malin; Gunapala, Sarath D; Agrawal, Govind P

2016-02-18

We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors.

NASA Electronic Parts and Packaging (NEPP) Program - Update

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Sampson, Michael J.

2010-01-01

This slide presentation reviews the goals and mission of the NASA Electronic Parts and Packaging (NEPP) Program. The NEPP mission is to provide guidance to NASA for the selection and application of microelectronics technologies, to improve understanding of the risks related to the use of these technologies in the space environment and to ensure that appropriate research is performed to meet NASA mission assurance needs. The program has been supporting NASA for over 20 years. The focus is on the reliability aspects of electronic devices. In this work the program also supports the electronics industry. There are several areas that the program is involved in: Memories, systems on a chip (SOCs), data conversion devices, power MOSFETS, power converters, scaled CMOS, capacitors, linear devices, fiber optics, and other electronics such as sensors, cryogenic and SiGe that are used in space systems. Each of these area are reviewed with the work that is being done in reliability and effects of radiation on these technologies.

High energy density redox flow device

DOEpatents

Chiang, Yet-Ming; Carter, W. Craig; Ho, Bryan Y; Duduta, Mihai; Limthongkul, Pimpa

2014-05-13

Redox flow devices are described in which at least one of the positive electrode or negative electrode-active materials is a semi-solid or is a condensed ion-storing electroactive material, and in which at least one of the electrode-active materials is transported to and from an assembly at which the electrochemical reaction occurs, producing electrical energy. The electronic conductivity of the semi-solid is increased by the addition of conductive particles to suspensions and/or via the surface modification of the solid in semi-solids (e.g., by coating the solid with a more electron conductive coating material to increase the power of the device). High energy density and high power redox flow devices are disclosed. The redox flow devices described herein can also include one or more inventive design features. In addition, inventive chemistries for use in redox flow devices are also described.

Adaptive oxide electronics: A review

NASA Astrophysics Data System (ADS)

Ha, Sieu D.; Ramanathan, Shriram

2011-10-01

Novel information processing techniques are being actively explored to overcome fundamental limitations associated with CMOS scaling. A new paradigm of adaptive electronic devices is emerging that may reshape the frontiers of electronics and enable new modalities. Creating systems that can learn and adapt to various inputs has generally been a complex algorithm problem in information science, albeit with wide-ranging and powerful applications from medical diagnosis to control systems. Recent work in oxide electronics suggests that it may be plausible to implement such systems at the device level, thereby drastically increasing computational density and power efficiency and expanding the potential for electronics beyond Boolean computation. Intriguing possibilities of adaptive electronics include fabrication of devices that mimic human brain functionality: the strengthening and weakening of synapses emulated by electrically, magnetically, thermally, or optically tunable properties of materials.In this review, we detail materials and device physics studies on functional metal oxides that may be utilized for adaptive electronics. It has been shown that properties, such as resistivity, polarization, and magnetization, of many oxides can be modified electrically in a non-volatile manner, suggesting that these materials respond to electrical stimulus similarly as a neural synapse. We discuss what device characteristics will likely be relevant for integration into adaptive platforms and then survey a variety of oxides with respect to these properties, such as, but not limited to, TaOx, SrTiO3, and Bi4-xLaxTi3O12. The physical mechanisms in each case are detailed and analyzed within the framework of adaptive electronics. We then review theoretically formulated and current experimentally realized adaptive devices with functional oxides, such as self-programmable logic and neuromorphic circuits. Finally, we speculate on what advances in materials physics and engineering may be needed to realize the full potential of adaptive oxide electronics.

Enhancing the bioremediation by harvesting electricity from the heavily contaminated sediments.

PubMed

Yang, Yonggang; Lu, Zijiang; Lin, Xunke; Xia, Chunyu; Sun, Guoping; Lian, Yingli; Xu, Meiying

2015-03-01

To test the long-term applicability of scaled-up sediment microbial fuel cells (SMFCs) in simultaneous bioremediation of toxic-contaminated sediments and power-supply for electronic devices, a 100 L SMFC inoculate with heavily contaminated sediments has been assembled and operated for over 2 years without external electron donor addition. The total organic chemical (TOC) degradation efficiency was 22.1% in the electricity generating SMFCs, which is significantly higher than that in the open-circuited SMFC (3.8%). The organic matters including contaminants in the contaminated sediments were sufficient for the electricity generation of SMFCs, even up to 8.5 years by the present SMFC theoretically. By using a power management system (PMS), the SMFC electricity could be harvested into batteries and used by commercial electronic devices. The results indicated that the SMFC-PMS system could be applied as a long-term and effective tool to simultaneously stimulate the bioremediation of the contaminated sediments and supply power for commercial devices. Copyright © 2014 Elsevier Ltd. All rights reserved.

Monitoring of Vital Signs with Flexible and Wearable Medical Devices.

PubMed

Khan, Yasser; Ostfeld, Aminy E; Lochner, Claire M; Pierre, Adrien; Arias, Ana C

2016-06-01

Advances in wireless technologies, low-power electronics, the internet of things, and in the domain of connected health are driving innovations in wearable medical devices at a tremendous pace. Wearable sensor systems composed of flexible and stretchable materials have the potential to better interface to the human skin, whereas silicon-based electronics are extremely efficient in sensor data processing and transmission. Therefore, flexible and stretchable sensors combined with low-power silicon-based electronics are a viable and efficient approach for medical monitoring. Flexible medical devices designed for monitoring human vital signs, such as body temperature, heart rate, respiration rate, blood pressure, pulse oxygenation, and blood glucose have applications in both fitness monitoring and medical diagnostics. As a review of the latest development in flexible and wearable human vitals sensors, the essential components required for vitals sensors are outlined and discussed here, including the reported sensor systems, sensing mechanisms, sensor fabrication, power, and data processing requirements. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Big power from walking

NASA Astrophysics Data System (ADS)

Illenberger, Patrin K.; Madawala, Udaya K.; Anderson, Iain A.

2016-04-01

Dielectric Elastomer Generators (DEG) offer an opportunity to capture the energy otherwise wasted from human motion. By integrating a DEG into the heel of standard footwear, it is possible to harness this energy to power portable devices. DEGs require substantial auxiliary systems which are commonly large, heavy and inefficient. A unique challenge for these low power generators is the combination of high voltage and low current. A void exists in the semiconductor market for devices that can meet these requirements. Until these become available, existing devices must be used in an innovative way to produce an effective DEG system. Existing systems such as the Bi-Directional Flyback (BDFB) and Self Priming Circuit (SPC) are an excellent example of this. The BDFB allows full charging and discharging of the DEG, improving power gained. The SPC allows fully passive voltage boosting, removing the priming source and simplifying the electronics. This paper outlines the drawbacks and benefits of active and passive electronic solutions for maximizing power from walking.

Cotton-textile-enabled flexible self-sustaining power packs via roll-to-roll fabrication

PubMed Central

Gao, Zan; Bumgardner, Clifton; Song, Ningning; Zhang, Yunya; Li, Jingjing; Li, Xiaodong

2016-01-01

With rising energy concerns, efficient energy conversion and storage devices are required to provide a sustainable, green energy supply. Solar cells hold promise as energy conversion devices due to their utilization of readily accessible solar energy; however, the output of solar cells can be non-continuous and unstable. Therefore, it is necessary to combine solar cells with compatible energy storage devices to realize a stable power supply. To this end, supercapacitors, highly efficient energy storage devices, can be integrated with solar cells to mitigate the power fluctuations. Here, we report on the development of a solar cell-supercapacitor hybrid device as a solution to this energy requirement. A high-performance, cotton-textile-enabled asymmetric supercapacitor is integrated with a flexible solar cell via a scalable roll-to-roll manufacturing approach to fabricate a self-sustaining power pack, demonstrating its potential to continuously power future electronic devices. PMID:27189776

Silicon Carbide Solar Cells Investigated

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Raffaelle, Ryne P.

2001-01-01

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Accelerated Aging with Electrical Overstress and Prognostics for Power MOSFETs

NASA Technical Reports Server (NTRS)

Saha, Sankalita; Celaya, Jose Ramon; Vashchenko, Vladislav; Mahiuddin, Shompa; Goebel, Kai F.

2011-01-01

Power electronics play an increasingly important role in energy applications as part of their power converter circuits. Understanding the behavior of these devices, especially their failure modes as they age with nominal usage or sudden fault development is critical in ensuring efficiency. In this paper, a prognostics based health management of power MOSFETs undergoing accelerated aging through electrical overstress at the gate area is presented. Details of the accelerated aging methodology, modeling of the degradation process of the device and prognostics algorithm for prediction of the future state of health of the device are presented. Experiments with multiple devices demonstrate the performance of the model and the prognostics algorithm as well as the scope of application. Index Terms Power MOSFET, accelerated aging, prognostics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiang, Yet-Ming; Carter, Craig W.; Ho, Bryan Y.

Redox flow devices are described in which at least one of the positive electrode or negative electrode-active materials is a semi-solid or is a condensed ion-storing electroactive material, and in which at least one of the electrode-active materials is transported to and from an assembly at which the electrochemical reaction occurs, producing electrical energy. The electronic conductivity of the semi-solid is increased by the addition of conductive particles to suspensions and/or via the surface modification of the solid in semi-solids (e.g., by coating the solid with a more electron conductive coating material to increase the power of the device). Highmore » energy density and high power redox flow devices are disclosed. The redox flow devices described herein can also include one or more inventive design features. In addition, inventive chemistries for use in redox flow devices are also described.« less

The Experimental Study of Novel Pseudospark Hollow Cathode Plasma Electron Gun

NASA Astrophysics Data System (ADS)

Gu, Xiaowei; Meng, Lin; Sun, Yiqin; Yu, Xinhua

2008-11-01

The high-power microwave devices with plasma-filled have unique properties. One of the major problems associated with plasma-filled microwave sources is that ions from the plasma drift toward the gun regions of the tube. This bombardment is particularly dangerous for the gun, where high-energy ion impacts can damage the cathode surface and degrade its electron emission capabilities. One of the techniques investigated to mitigate this issue is to replace the material cathode with plasma cathode. Now, we study the novel electron gun (E-gun) that can be suitable for high power microwave device applications, adopting two forms of discharge channel, 1: a single hole channel, the structure can produce a solid electron beam; 2: porous holes channel, the structure can generate multiple electronic injection which is similar to the annular electron beam.

High-Temperature High-Power Packaging Techniques for HEV Traction Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barlow, F.D.; Elshabini, A.

A key issue associated with the wider adoption of hybrid-electric vehicles (HEV) and plug in hybrid-electric vehicles (PHEV) is the implementation of the power electronic systems that are required in these products [1]. To date, many consumers find the adoption of these technologies problematic based on a financial analysis of the initial cost versus the savings available from reduced fuel consumption. Therefore, one of the primary industry goals is the reduction in the price of these vehicles relative to the cost of traditional gasoline powered vehicles. Part of this cost reduction must come through optimization of the power electronics requiredmore » by these vehicles. In addition, the efficiency of the systems must be optimized in order to provide the greatest range possible. For some drivers, any reduction in the range associated with a potential HEV or PHEV solution in comparison to a gasoline powered vehicle represents a significant barrier to adoption and the efficiency of the power electronics plays an important role in this range. Likewise, high efficiencies are also important since lost power further complicates the thermal management of these systems. Reliability is also an important concern since most drivers have a high level of comfort with gasoline powered vehicles and are somewhat reluctant to switch to a less proven technology. Reliability problems in the power electronics or associated components could not only cause a high warranty cost to the manufacturer, but may also taint these technologies in the consumer's eyes. A larger vehicle offering in HEVs is another important consideration from a power electronics point of view. A larger vehicle will need more horsepower, or a larger rated drive. In some ways this will be more difficult to implement from a cost and size point of view. Both the packaging of these modules and the thermal management of these systems at competitive price points create significant challenges. One way in which significant cost reduction of these systems could be achieved is through the use of a single coolant loop for both the power electronics as well as the internal combustion engine (ICE) [2]. This change would reduce the complexity of the cooling system which currently relies on two loops to a single loop [3]. However, the current nominal coolant temperature entering these inverters is 65 C [3], whereas a normal ICE coolant temperature would be much higher at approximately 100 C. This change in coolant temperature significantly increases the junction temperatures of the devices and creates a number of challenges for both device fabrication and the assembly of these devices into inverters and converters for HEV and PHEV applications. With this change in mind, significant progress has been made on the use of SiC devices for inverters that can withstand much higher junction temperatures than traditional Si based inverters [4,5,6]. However, a key problem which the single coolant loop and high temperature devices is the effective packaging of these devices and related components into a high temperature inverter. The elevated junction temperatures that exist in these modules are not compatible with reliable inverters based on existing packaging technology. This report seeks to provide a literature survey of high temperature packaging and to highlight the issues related to the implementation of high temperature power electronic modules for HEV and PHEV applications. For purposes of discussion, it will be assumed in this report that 200 C is the targeted maximum junction temperature.« less

Modeling of planar varactor frequency multiplier devices with blocking barriers

NASA Technical Reports Server (NTRS)

Lieneweg, Udo; Tolmunen, T. J.; Frerking, Margaret A.; Maserjian, Joseph

1992-01-01

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

Modeling of planar varactor frequency multiplier devices with blocking barriers

NASA Astrophysics Data System (ADS)

Lieneweg, Udo; Tolmunen, T. J.; Frerking, Margaret A.; Maserjian, Joseph

1992-05-01

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

High temperature electronics applications in space exploration

NASA Technical Reports Server (NTRS)

Jurgens, R. F.

1981-01-01

The extension of the range of operating temperatures of electronic components and systems for planetary exploration is examined. In particular, missions which utilize balloon-borne instruments to study the Venusian and Jovian atmospheres are discussed. Semiconductor development and devices including power sources, ultrastable oscillators, transmitters, antennas, electromechanical devices, and deployment systems are addressed.

Recent advances on enzymatic glucose/oxygen and hydrogen/oxygen biofuel cells: Achievements and limitations

NASA Astrophysics Data System (ADS)

Cosnier, Serge; J. Gross, Andrew; Le Goff, Alan; Holzinger, Michael

2016-09-01

The possibility of producing electrical power from chemical energy with biological catalysts has induced the development of biofuel cells as viable energy sources for powering portable and implanted electronic devices. These power sources employ biocatalysts, called enzymes, which are highly specific and catalytic towards the oxidation of a biofuel and the reduction of oxygen or hydrogen peroxide. Enzymes, on one hand, are promising candidates to replace expensive noble metal-based catalysts in fuel cell research. On the other hand, they offer the exciting prospect of a new generation of fuel cells which harvest energy from body fluids. Biofuel cells which use glucose as a fuel are particularly interesting for generating electricity to power electronic devices inside a living body. Hydrogen consuming biofuel cells represent an emerging alternative to platinum catalysts due to comparable efficiencies and the capability to operate at lower temperatures. Currently, these technologies are not competitive with existing commercialised fuel cell devices due to limitations including insufficient power outputs and lifetimes. The advantages and challenges facing glucose biofuel cells for implantation and hydrogen biofuel cells will be summarised along with recent promising advances and the future prospects of these exotic energy-harvesting devices.

Materials Advances for Next-Generation Ingestible Electronic Medical Devices.

PubMed

Bettinger, Christopher J

2015-10-01

Electronic medical implants have collectively transformed the diagnosis and treatment of many diseases, but have many inherent limitations. Electronic implants require invasive surgeries, operate in challenging microenvironments, and are susceptible to bacterial infection and persistent inflammation. Novel materials and nonconventional device fabrication strategies may revolutionize the way electronic devices are integrated with the body. Ingestible electronic devices offer many advantages compared with implantable counterparts that may improve the diagnosis and treatment of pathologies ranging from gastrointestinal infections to diabetes. This review summarizes current technologies and highlights recent materials advances. Specific focus is dedicated to next-generation materials for packaging, circuit design, and on-board power supplies that are benign, nontoxic, and even biodegradable. Future challenges and opportunities are also highlighted. Copyright © 2015 Elsevier Ltd. All rights reserved.

Flexible, transparent and exceptionally high power output nanogenerators based on ultrathin ZnO nanoflakes

NASA Astrophysics Data System (ADS)

van Ngoc, Huynh; Kang, Dae Joon

2016-02-01

Novel nanogenerator structures composed of ZnO nanoflakes of less than 10 nm thickness were fabricated using a novel method involving a facile synthetic route and a rational design. The fabricated nanogenerators exhibited a short-circuit current density of 67 μA cm-2, a peak-to-peak open-circuit voltage of 110 V, and an overall output power density exceeding 1.2 mW cm-2, and to the best of our knowledge, these are the best values that have been reported so far in the literature on ZnO-based nanogenerators. We demonstrated that our nanogenerator design could instantaneously power 20 commercial green light-emitting diodes without any additional energy storage processes. Both the facile synthetic route for the ZnO nanoflakes and the straightforward device fabrication process present great scaling potential in order to power mobile and personal electronics that can be used in smart wearable systems, transparent and flexible devices, implantable telemetric energy receivers, electronic emergency equipment, and other self-powered nano/micro devices.Novel nanogenerator structures composed of ZnO nanoflakes of less than 10 nm thickness were fabricated using a novel method involving a facile synthetic route and a rational design. The fabricated nanogenerators exhibited a short-circuit current density of 67 μA cm-2, a peak-to-peak open-circuit voltage of 110 V, and an overall output power density exceeding 1.2 mW cm-2, and to the best of our knowledge, these are the best values that have been reported so far in the literature on ZnO-based nanogenerators. We demonstrated that our nanogenerator design could instantaneously power 20 commercial green light-emitting diodes without any additional energy storage processes. Both the facile synthetic route for the ZnO nanoflakes and the straightforward device fabrication process present great scaling potential in order to power mobile and personal electronics that can be used in smart wearable systems, transparent and flexible devices, implantable telemetric energy receivers, electronic emergency equipment, and other self-powered nano/micro devices. Electronic supplementary information (ESI) available: FE-SEM images of ZnO NFs grown on textile and FTO/glass substrates, XRD patterns of synthesized ZnO NFs, nitrogen adsorption isotherms for ZnO NWs and ZnO NFs, effect of different coating layers on ZnO NFNGs, P(VDF-TrFE) coating on ZnO NFs, output open-circuit voltages of a textile electrostatic NG based on P(VDF-TrFE) coated on ZnO NFs and a textile ZnO NFNG without an insulating layer generated by a sonic wave, NG-based triboelectric effects and PDMS-coated ZnO NF-based NGs grown on an ITO/PET substrate. See DOI: 10.1039/c5nr08324a

System and Method for an Integrated Satellite Platform

NASA Technical Reports Server (NTRS)

Starin, Scott R. (Inventor); Sheikh, Salman I. (Inventor); Hesse, Michael (Inventor); Clagett, Charles E. (Inventor); Santos Soto, Luis H. (Inventor); Hesh, Scott V. (Inventor); Paschalidis, Nikolaos (Inventor); Ericsson, Aprille J. (Inventor); Johnson, Michael A. (Inventor)

2018-01-01

A system, method, and computer-readable storage devices for a 6U CubeSat with a magnetometer boom. The example 6U CubeSat can include an on-board computing device connected to an electrical power system, wherein the electrical power system receives power from at least one of a battery and at least one solar panel, a first fluxgate sensor attached to an extendable boom, a release mechanism for extending the extendable boom, at least one second fluxgate sensor fixed within the satellite, an ion neutral mass spectrometer, and a relativistic electron/proton telescope. The on-board computing device can receive data from the first fluxgate sensor, the at least one second fluxgate sensor, the ion neutral mass spectrometer, and the relativistic electron/proton telescope via the bus, and can then process the data via an algorithm to deduce a geophysical signal.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Toufexis, Filippos; Tantawi, Sami G.; Jensen, Aaron

Here, we report the experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum electronic device, which uses an over-moded spherical sector output cavity. In this device, a pencil electron beam is helically deflected in a transverse deflecting cavity before entering the output cavity. No magnetic field is required to focus or guide the beam. We built and tested a proof-of-principle device with an output frequency of 57.12 GHz. The measured peak power was 52.67 W at the 5th harmonic of the drive frequency. Power at the 4th, 6th, and 7th harmonics was 33.28 dB lower than that at themore » 5th harmonic.« less

High-Performance electronics at ultra-low power consumption for space applications: From superconductor to nanoscale semiconductor technology

NASA Technical Reports Server (NTRS)

Duncan, Robert V.; Simmons, Jerry; Kupferman, Stuart; McWhorter, Paul; Dunlap, David; Kovanis, V.

1995-01-01

A detailed review of Sandia's work in ultralow power dissipation electronics for space flight applications, including superconductive electronics, new advances in quantum well structures, and ultra-high purity 3-5 materials, and recent advances in micro-electro-optical-mechanical systems (MEMS) is presented. The superconductive electronics and micromechanical devices are well suited for application in micro-robotics, micro-rocket engines, and advanced sensors.

Advanced development of double-injection, deep-impurity semiconductor switches

NASA Technical Reports Server (NTRS)

Hanes, M. H.

1987-01-01

Deep-impurity, double-injection devices, commonly refered to as (DI) squared devices, represent a class of semiconductor switches possessing a very high degree of tolerance to electron and neutron irradiation and to elevated temperature operation. These properties have caused them to be considered as attractive candidates for space power applications. The design, fabrication, and testing of several varieties of (DI) squared devices intended for power switching are described. All of these designs were based upon gold-doped silicon material. Test results, along with results of computer simulations of device operation, other calculations based upon the assumed mode of operation of (DI) squared devices, and empirical information regarding power semiconductor device operation and limitations, have led to the conculsion that these devices are not well suited to high-power applications. When operated in power circuitry configurations, they exhibit high-power losses in both the off-state and on-state modes. These losses are caused by phenomena inherent to the physics and material of the devices and cannot be much reduced by device design optimizations. The (DI) squared technology may, however, find application in low-power functions such as sensing, logic, and memory, when tolerance to radiation and temperature are desirable (especially is device performance is improved by incorporation of deep-level impurities other than gold.

Self-Powered Wearable Electronics Based on Moisture Enabled Electricity Generation.

PubMed

Shen, Daozhi; Xiao, Ming; Zou, Guisheng; Liu, Lei; Duley, Walter W; Zhou, Y Norman

2018-05-01

Most state-of-the-art electronic wearable sensors are powered by batteries that require regular charging and eventual replacement, which would cause environmental issues and complex management problems. Here, a device concept is reported that can break this paradigm in ambient moisture monitoring-a new class of simple sensors themselves can generate moisture-dependent voltage that can be used to determine the ambient humidity level directly. It is demonstrated that a moisture-driven electrical generator, based on the diffusive flow of water in titanium dioxide (TiO 2 ) nanowire networks, can yield an output power density of up to 4 µW cm -2 when exposed to a highly moist environment. This performance is two orders of magnitude better than that reported for carbon-black generators. The output voltage is strongly dependent on humidity of ambient environment. As a big breakthrough, this new type of device is successfully used as self-powered wearable human-breathing monitors and touch pads, which is not achievable by any existing moisture-induced-electricity technology. The availability of high-output self-powered electrical generators will facilitate the design and application of a wide range of new innovative flexible electronic devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Evaluation of induction motor performance using an electronic power factor controller

NASA Technical Reports Server (NTRS)

1978-01-01

The concept of reducing the losses in an induction motor by electronically controlling the time interval between the zero crossing of the applied voltage and the zero crossing of the armature current was evaluated. The effect on power losses and power factor of reducing the applied sinusoidal voltages below the rated value was investigated experimentally. The reduction in power losses was measured using an electronic controller designed and built at MSFC. Modifications to the MSFC controller are described as well as a manually controlled electronic device which does not require that the motor be wye connected and the neutral available. Possible energy savings are examined.

Power electronic interface circuits for batteries and ultracapacitors in electric vehicles and battery storage systems

DOEpatents

King, Robert Dean; DeDoncker, Rik Wivina Anna Adelson

1998-01-01

A method and apparatus for load leveling of a battery in an electrical power system includes a power regulator coupled to transfer power between a load and a DC link, a battery coupled to the DC link through a first DC-to-DC converter and an auxiliary passive energy storage device coupled to the DC link through a second DC-to-DC converter. The battery is coupled to the passive energy storage device through a unidirectional conducting device whereby the battery can supply power to the DC link through each of the first and second converters when battery voltage exceeds voltage on the passive storage device. When the load comprises a motor capable of operating in a regenerative mode, the converters are adapted for transferring power to the battery and passive storage device. In this form, resistance can be coupled in circuit with the second DC-to-DC converter to dissipate excess regenerative power.

Power electronic interface circuits for batteries and ultracapacitors in electric vehicles and battery storage systems

DOEpatents

King, R.D.; DeDoncker, R.W.A.A.

1998-01-20

A method and apparatus for load leveling of a battery in an electrical power system includes a power regulator coupled to transfer power between a load and a DC link, a battery coupled to the DC link through a first DC-to-DC converter and an auxiliary passive energy storage device coupled to the DC link through a second DC-to-DC converter. The battery is coupled to the passive energy storage device through a unidirectional conducting device whereby the battery can supply power to the DC link through each of the first and second converters when battery voltage exceeds voltage on the passive storage device. When the load comprises a motor capable of operating in a regenerative mode, the converters are adapted for transferring power to the battery and passive storage device. In this form, resistance can be coupled in circuit with the second DC-to-DC converter to dissipate excess regenerative power. 8 figs.

Internet of "printed" Things: low-cost fabrication of autonomous sensing nodes by inkjet printing

NASA Astrophysics Data System (ADS)

Kawahara, Yoshihiro

2014-11-01

"What if electronics devices are printed using an inkjet printer even at home?" "What if those devices no longer need a battery?" I will introduce two enabling technologies for the Internet of Things concept. 1. Instant Inkjet Circuits: A low cost, fast and accessible technology to support the rapid prototyping of electronic devices. We demonstrated that "sintering-free" silver nano particle ink with a commodity inkjet printer can be used to fabricate printed circuit board and high-frequency applications such as antennas and sensors. The technology is now commercialized by AgIC, Inc. 2. Wireless Power: Although large amounts of data can be exchanged over a wireless communication link, mobile devices are still tethered by power cables. We are trying to solve this problem by two different approaches: energy harvesting. A simple circuitry comprised of diodes and capacitor can convert ambient radio signals into DC current. Our research revealed the signals from TV tower located 6.5km apart could be used to feed 100 microwatts to power microcontrollers.

Nanostructured Silicon Used for Flexible and Mobile Electricity Generation.

PubMed

Sun, Baoquan; Shao, Mingwang; Lee, Shuitong

2016-12-01

The use of nanostructured silicon for the generation of electricity in flexible and mobile devices is reviewed. This field has attracted widespread interest in recent years due to the emergence of plastic electronics. Such developments are likely to alter the nature of power sources in the near future. For example, flexible photovoltaic cells can supply electricity to rugged and collapsible electronics, biomedical devices, and conformable solar panels that are integrated with the curved surfaces of vehicles or buildings. Here, the unique optical and electrical properties of nanostructured silicon are examined, with regard to how they can be exploited in flexible photovoltaics, thermoelectric generators, and piezoelectric devices, which serve as power generators. Particular emphasis is placed on organic-silicon heterojunction photovoltaic devices, silicon-nanowire-based thermoelectric generators, and core-shell silicon/silicon oxide nanowire-based piezoelectric devices, because they are flexible, lightweight, and portable. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Biologically derived melanin electrodes in aqueous sodium-ion energy storage devices

PubMed Central

Kim, Young Jo; Wu, Wei; Chun, Sang-Eun; Whitacre, Jay F.; Bettinger, Christopher J.

2013-01-01

Biodegradable electronics represents an attractive and emerging paradigm in medical devices by harnessing simultaneous advantages afforded by electronically active systems and obviating issues with chronic implants. Integrating practical energy sources that are compatible with the envisioned operation of transient devices is an unmet challenge for biodegradable electronics. Although high-performance energy storage systems offer a feasible solution, toxic materials and electrolytes present regulatory hurdles for use in temporary medical devices. Aqueous sodium-ion charge storage devices combined with biocompatible electrodes are ideal components to power next-generation biodegradable electronics. Here, we report the use of biologically derived organic electrodes composed of melanin pigments for use in energy storage devices. Melanins of natural (derived from Sepia officinalis) and synthetic origin are evaluated as anode materials in aqueous sodium-ion storage devices. Na+-loaded melanin anodes exhibit specific capacities of 30.4 ± 1.6 mAhg−1. Full cells composed of natural melanin anodes and λ-MnO2 cathodes exhibit an initial potential of 1.03 ± 0.06 V with a maximum specific capacity of 16.1 ± 0.8 mAhg−1. Natural melanin anodes exhibit higher specific capacities compared with synthetic melanins due to a combination of beneficial chemical, electrical, and physical properties exhibited by the former. Taken together, these results suggest that melanin pigments may serve as a naturally occurring biologically derived charge storage material to power certain types of medical devices. PMID:24324163

Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2015-07-21

Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10(5) times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.

Integrated Power Adapter: Isolated Converter with Integrated Passives and Low Material Stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-09-01

ADEPT Project: CPES at Virginia Tech is developing an extremely efficient power converter that could be used in power adapters for small, lightweight laptops and other types of mobile electronic devices. Power adapters convert electrical energy into useable power for an electronic device, and they currently waste a lot of energy when they are plugged into an outlet to power up. CPES at Virginia Tech is integrating high-density capacitors, new magnetic materials, high-frequency integrated circuits, and a constant-flux transformer to create its efficient power converter. The high-density capacitors enable the power adapter to store more energy. The new magnetic materialsmore » also increase energy storage, and they can be precisely dispensed using a low-cost ink-jet printer which keeps costs down. The high-frequency integrated circuits can handle more power, and they can handle it more efficiently. And, the constant-flux transformer processes a consistent flow of electrical current, which makes the converter more efficient.« less

1 mm3-sized optical neural stimulator based on CMOS integrated photovoltaic power receiver

NASA Astrophysics Data System (ADS)

Tokuda, Takashi; Ishizu, Takaaki; Nattakarn, Wuthibenjaphonchai; Haruta, Makito; Noda, Toshihiko; Sasagawa, Kiyotaka; Sawan, Mohamad; Ohta, Jun

2018-04-01

In this work, we present a simple complementary metal-oxide semiconductor (CMOS)-controlled photovoltaic power-transfer platform that is suitable for very small (less than or equal to 1-2 mm) electronic devices such as implantable health-care devices or distributed nodes for the Internet of Things. We designed a 1.25 mm × 1.25 mm CMOS power receiver chip that contains integrated photovoltaic cells. We characterized the CMOS-integrated power receiver and successfully demonstrated blue light-emitting diode (LED) operation powered by infrared light. Then, we integrated the CMOS chip and a few off-chip components into a 1-mm3 implantable optogenetic stimulator, and demonstrated the operation of the device.

A Physically Transient Form of Silicon Electronics, With Integrated Sensors, Actuators and Power Supply

PubMed Central

Hwang, Suk-Won; Tao, Hu; Kim, Dae-Hyeong; Cheng, Huanyu; Song, Jun-Kyul; Rill, Elliott; Brenckle, Mark A.; Panilaitis, Bruce; Won, Sang Min; Kim, Yun-Soung; Yu, Ki Jun; Ameen, Abid; Li, Rui; Su, Yewang; Yang, Miaomiao; Kaplan, David L.; Zakin, Mitchell R.; Slepian, Marvin J.; Huang, Yonggang; Omenetto, Fiorenzo G.; Rogers, John A.

2013-01-01

A remarkable feature of modern silicon electronics is its ability to remain functionally and physically invariant, almost indefinitely for many practical purposes. Here, we introduce a silicon-based technology that offers the opposite behavior: it gradually vanishes over time, in a well-controlled, programmed manner. Devices that are ‘transient’ in this sense create application possibilities that cannot be addressed with conventional electronics, such as active implants that exist for medically useful timeframes, but then completely dissolve and disappear via resorption by the body. We report a comprehensive set of materials, manufacturing schemes, device components and theoretical design tools for a complementary metal oxide semiconductor (CMOS) electronics of this type, together with four different classes of sensors and actuators in addressable arrays, two options for power supply and a wireless control strategy. A transient silicon device capable of delivering thermal therapy in an implantable mode and its demonstration in animal models illustrate a system-level example of this technology. PMID:23019646

Local light-induced magnetization using nanodots and chiral molecules.

PubMed

Dor, Oren Ben; Morali, Noam; Yochelis, Shira; Baczewski, Lech Tomasz; Paltiel, Yossi

2014-11-12

With the increasing demand for miniaturization, nanostructures are likely to become the primary components of future integrated circuits. Different approaches are being pursued toward achieving efficient electronics, among which are spin electronics devices (spintronics). In principle, the application of spintronics should result in reducing the power consumption of electronic devices. Recently a new, promising, effective approach for spintronics has emerged, using spin selectivity in electron transport through chiral molecules. In this work, using chiral molecules and nanocrystals, we achieve local spin-based magnetization generated optically at ambient temperatures. Through the chiral layer, a spin torque can be transferred without permanent charge transfer from the nanocrystals to a thin ferromagnetic layer, creating local perpendicular magnetization. We used Hall sensor configuration and atomic force microscopy (AFM) to measure the induced local magnetization. At low temperatures, anomalous spin Hall effects were measured using a thin Ni layer. The results may lead to optically controlled spintronics logic devices that will enable low power consumption, high density, and cheap fabrication.

A fully implantable pacemaker for the mouse: from battery to wireless power.

PubMed

Laughner, Jacob I; Marrus, Scott B; Zellmer, Erik R; Weinheimer, Carla J; MacEwan, Matthew R; Cui, Sophia X; Nerbonne, Jeanne M; Efimov, Igor R

2013-01-01

Animal models have become a popular platform for the investigation of the molecular and systemic mechanisms of pathological cardiovascular physiology. Chronic pacing studies with implantable pacemakers in large animals have led to useful models of heart failure and atrial fibrillation. Unfortunately, molecular and genetic studies in these large animal models are often prohibitively expensive or not available. Conversely, the mouse is an excellent species for studying molecular mechanisms of cardiovascular disease through genetic engineering. However, the large size of available pacemakers does not lend itself to chronic pacing in mice. Here, we present the design for a novel, fully implantable wireless-powered pacemaker for mice capable of long-term (>30 days) pacing. This design is compared to a traditional battery-powered pacemaker to demonstrate critical advantages achieved through wireless inductive power transfer and control. Battery-powered and wireless-powered pacemakers were fabricated from standard electronic components in our laboratory. Mice (n = 24) were implanted with endocardial, battery-powered devices (n = 14) and epicardial, wireless-powered devices (n = 10). Wireless-powered devices were associated with reduced implant mortality and more reliable device function compared to battery-powered devices. Eight of 14 (57.1%) mice implanted with battery-powered pacemakers died following device implantation compared to 1 of 10 (10%) mice implanted with wireless-powered pacemakers. Moreover, device function was achieved for 30 days with the wireless-powered device compared to 6 days with the battery-powered device. The wireless-powered pacemaker system presented herein will allow electrophysiology studies in numerous genetically engineered mouse models as well as rapid pacing-induced heart failure and atrial arrhythmia in mice.

Fully roll-to-roll gravure printed rectenna on plastic foils for wireless power transmission at 13.56 MHz.

PubMed

Park, Hyejin; Kang, Hwiwon; Lee, Yonggil; Park, Yongsu; Noh, Jinsoo; Cho, Gyoujin

2012-08-31

Wireless power transmission to inexpensive and disposable smart electronic devices is one of the key issues for the realization of a ubiquitous society where sensor networks such as RFID tags, price tags, smart logos, signage and sensors could be fully interconnected and utilized by DC power of less than 0.3 W. This DC power can be provided by inductively coupled AC from a 13.56 MHz power transmitter through a rectenna, consisting of an antenna, a diode and a capacitor, which would be cheap to integrate with inexpensive smart electronic devices. To integrate the rectenna with a minimum cost, a roll-to-roll (R2R) gravure printing process has been considered to print the rectenna on plastic foils. In this paper, R2R gravure printing systems including printing condition and four different nanoparticle based inks will be reported to print the rectenna (antenna, diode and capacitor) on plastic foils at a printing speed of 8 m min(-1) and more than 90% device yield for a wireless power transmission of 0.3 W using a standard 13.56 MHz power transmitter.

Fully roll-to-roll gravure printed rectenna on plastic foils for wireless power transmission at 13.56 MHz

NASA Astrophysics Data System (ADS)

Park, Hyejin; Kang, Hwiwon; Lee, Yonggil; Park, Yongsu; Noh, Jinsoo; Cho, Gyoujin

2012-08-01

Wireless power transmission to inexpensive and disposable smart electronic devices is one of the key issues for the realization of a ubiquitous society where sensor networks such as RFID tags, price tags, smart logos, signage and sensors could be fully interconnected and utilized by DC power of less than 0.3 W. This DC power can be provided by inductively coupled AC from a 13.56 MHz power transmitter through a rectenna, consisting of an antenna, a diode and a capacitor, which would be cheap to integrate with inexpensive smart electronic devices. To integrate the rectenna with a minimum cost, a roll-to-roll (R2R) gravure printing process has been considered to print the rectenna on plastic foils. In this paper, R2R gravure printing systems including printing condition and four different nanoparticle based inks will be reported to print the rectenna (antenna, diode and capacitor) on plastic foils at a printing speed of 8 m min-1 and more than 90% device yield for a wireless power transmission of 0.3 W using a standard 13.56 MHz power transmitter.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nekoogar, Faranak; Reynolds, Matthew; Lefton, Scott

A secure optionally passive RFID tag or sensor system comprises a passive RFID tag having means for receiving radio signals from at least one base station and for transmitting radio signals to at least one base station, where the tag is capable of being powered exclusively by received radio energy, and an external power and data logging device having at least one battery and electronic circuitry including a digital memory configured for storing and recalling data. The external power and data logging device has a means for powering the tag, and also has a means.

Electronics for Extreme Environments

NASA Astrophysics Data System (ADS)

Patel, J. U.; Cressler, J.; Li, Y.; Niu, G.

2001-01-01

Most of the NASA missions involve extreme environments comprising radiation and low or high temperatures. Current practice of providing friendly ambient operating environment to electronics costs considerable power and mass (for shielding). Immediate missions such as the Europa orbiter and lander and Mars landers require the electronics to perform reliably in extreme conditions during the most critical part of the mission. Some other missions planned in the future also involve substantial surface activity in terms of measurements, sample collection, penetration through ice and crust and the analysis of samples. Thus it is extremely critical to develop electronics that could reliably operate under extreme space environments. Silicon On Insulator (SOI) technology is an extremely attractive candidate for NASA's future low power and high speed electronic systems because it offers increased transconductance, decreased sub-threshold slope, reduced short channel effects, elimination of kink effect, enhanced low field mobility, and immunity from radiation induced latch-up. A common belief that semiconductor devices function better at low temperatures is generally true for bulk devices but it does not hold true for deep sub-micron SOI CMOS devices with microscopic device features of 0.25 micrometers and smaller. Various temperature sensitive device parameters and device characteristics have recently been reported in the literature. Behavior of state of the art technology devices under such conditions needs to be evaluated in order to determine possible modifications in the device design for better performance and survivability under extreme environments. Here, we present a unique approach of developing electronics for extreme environments to benefit future NASA missions as described above. This will also benefit other long transit/life time missions such as the solar sail and planetary outposts in which electronics is out open in the unshielded space at the ambient space temperatures and always exposed to radiation. Additional information is contained in the original extended abstract.

Intelligent vehicle electrical power supply system with central coordinated protection

NASA Astrophysics Data System (ADS)

Yang, Diange; Kong, Weiwei; Li, Bing; Lian, Xiaomin

2016-07-01

The current research of vehicle electrical power supply system mainly focuses on electric vehicles (EV) and hybrid electric vehicles (HEV). The vehicle electrical power supply system used in traditional fuel vehicles is rather simple and imperfect; electrical/electronic devices (EEDs) applied in vehicles are usually directly connected with the vehicle's battery. With increasing numbers of EEDs being applied in traditional fuel vehicles, vehicle electrical power supply systems should be optimized and improved so that they can work more safely and more effectively. In this paper, a new vehicle electrical power supply system for traditional fuel vehicles, which accounts for all electrical/electronic devices and complex work conditions, is proposed based on a smart electrical/electronic device (SEED) system. Working as an independent intelligent electrical power supply network, the proposed system is isolated from the electrical control module and communication network, and access to the vehicle system is made through a bus interface. This results in a clean controller power supply with no electromagnetic interference. A new practical battery state of charge (SoC) estimation method is also proposed to achieve more accurate SoC estimation for lead-acid batteries in traditional fuel vehicles so that the intelligent power system can monitor the status of the battery for an over-current state in each power channel. Optimized protection methods are also used to ensure power supply safety. Experiments and tests on a traditional fuel vehicle are performed, and the results reveal that the battery SoC is calculated quickly and sufficiently accurately for battery over-discharge protection. Over-current protection is achieved, and the entire vehicle's power utilization is optimized. For traditional fuel vehicles, the proposed vehicle electrical power supply system is comprehensive and has a unified system architecture, enhancing system reliability and security.

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

DOE PAGES

Wang, Fei; Zhang, Zheyu

2016-12-28

This article overviews the silicon carbide (SiC) technology. The focus is on the benefits of SiC based power electronics for converters and systems, as well as their ability in enabling new applications. The challenges and research trends on the design and application of SiC power electronics are also discussed.

Recent Progress of Self-Powered Sensing Systems for Wearable Electronics.

PubMed

Lou, Zheng; Li, La; Wang, Lili; Shen, Guozhen

2017-12-01

Wearable/flexible electronic sensing systems are considered to be one of the key technologies in the next generation of smart personal electronics. To realize personal portable devices with mobile electronics application, i.e., wearable electronic sensors that can work sustainably and continuously without an external power supply are highly desired. The recent progress and advantages of wearable self-powered electronic sensing systems for mobile or personal attachable health monitoring applications are presented. An overview of various types of wearable electronic sensors, including flexible tactile sensors, wearable image sensor array, biological and chemical sensor, temperature sensors, and multifunctional integrated sensing systems is provided. Self-powered sensing systems with integrated energy units are then discussed, separated as energy harvesting self-powered sensing systems, energy storage integrated sensing systems, and all-in-on integrated sensing systems. Finally, the future perspectives of self-powered sensing systems for wearable electronics are discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multidimensional materials and device architectures for future hybrid energy storage

DOE PAGES

Lukatskaya, Maria R.; Dunn, Bruce; Gogotsi, Yury

2016-09-07

Electrical energy storage plays a vital role in daily life due to our dependence on numerous portable electronic devices. Moreover, with the continued miniaturization of electronics, integration of wireless devices into our homes and clothes and the widely anticipated ‘Internet of Things’, there are intensive efforts to develop miniature yet powerful electrical energy storage devices. Here, this review addresses the cutting edge of electrical energy storage technology, outlining approaches to overcome current limitations and providing future research directions towards the next generation of electrical energy storage devices whose characteristics represent a true hybridization of batteries and electrochemical capacitors.

Multidimensional materials and device architectures for future hybrid energy storage

NASA Astrophysics Data System (ADS)

Lukatskaya, Maria R.; Dunn, Bruce; Gogotsi, Yury

2016-09-01

Electrical energy storage plays a vital role in daily life due to our dependence on numerous portable electronic devices. Moreover, with the continued miniaturization of electronics, integration of wireless devices into our homes and clothes and the widely anticipated `Internet of Things', there are intensive efforts to develop miniature yet powerful electrical energy storage devices. This review addresses the cutting edge of electrical energy storage technology, outlining approaches to overcome current limitations and providing future research directions towards the next generation of electrical energy storage devices whose characteristics represent a true hybridization of batteries and electrochemical capacitors.

Multidimensional materials and device architectures for future hybrid energy storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lukatskaya, Maria R.; Dunn, Bruce; Gogotsi, Yury

Electrical energy storage plays a vital role in daily life due to our dependence on numerous portable electronic devices. Moreover, with the continued miniaturization of electronics, integration of wireless devices into our homes and clothes and the widely anticipated ‘Internet of Things’, there are intensive efforts to develop miniature yet powerful electrical energy storage devices. Here, this review addresses the cutting edge of electrical energy storage technology, outlining approaches to overcome current limitations and providing future research directions towards the next generation of electrical energy storage devices whose characteristics represent a true hybridization of batteries and electrochemical capacitors.

Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation Using Superconducting Tunnel Junctions with Integrated Radio Frequency Single-Electron Transistors

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Prober, D. E.; Rhee, K. W.; Schoelkopf, R. J.; Stahle, C. M.; Teufel, J.; Wollack, E. J.

2004-01-01

For high resolution imaging and spectroscopy in the FIR and submillimeter, space observatories will demand sensitive, fast, compact, low-power detector arrays with 104 pixels and sensitivity less than 10(exp -20) W/Hz(sup 0.5). Antenna-coupled superconducting tunnel junctions with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique. The device consists of an antenna to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure current through junctions contacting the absorber. We describe optimization of device parameters, and results on fabrication techniques for producing devices with high yield for detector arrays. We also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

Self-healing of cracks in Ag joining layer for die-attachment in power devices

NASA Astrophysics Data System (ADS)

Chen, Chuantong; Nagao, Shijo; Suganuma, Katsuaki; Jiu, Jinting; Zhang, Hao; Sugahara, Tohru; Iwashige, Tomohito; Sugiura, Kazuhiko; Tsuruta, Kazuhiro

2016-08-01

Sintered silver (Ag) joining has attracted significant interest in power devices modules for its ability to form stable joints with a porous interconnection layer. A function for the self-healing of cracks in sintered porous Ag interlayers at high temperatures is discovered and reported here. A crack which was prepared on a Ag joining layer was closed after heating at 200 °C in air. The tensile strength of pre-cracked Ag joining layer specimens recovers to the value of non-cracked specimens after heating treatment. Transmission electron microscopy (TEM) was used to probe the self-healing mechanism. TEM images and electron diffraction patterns show that a large quantity of Ag nanoparticles formed at the gap with the size less than 10 nm, which bridges the crack in the self-healing process. This discovery provides additional motivation for the application of Ag as an interconnection material for power devices at high temperature.

Inverted organic photovoltaic device with a new electron transport layer

NASA Astrophysics Data System (ADS)

Kim, Hyeong Pil; Yusoff, Abd Rashid bin Mohd; Kim, Hyo Min; Lee, Hee Jae; Seo, Gi Jun; Jang, Jin

2014-03-01

We demonstrate that there is a new solution-processed electron transport layer, lithium-doped zinc oxide (LZO), with high-performance inverted organic photovoltaic device. The device exhibits a fill factor of 68.58%, an open circuit voltage of 0.86 V, a short-circuit current density of -9.35 cm/mA2 along with 5.49% power conversion efficiency. In addition, we studied the performance of blend ratio dependence on inverted organic photovoltaics. Our device also demonstrates a long stability shelf life over 4 weeks in air.

Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronics.

PubMed

Heo, Jinseong; Byun, Kyung-Eun; Lee, Jaeho; Chung, Hyun-Jong; Jeon, Sanghun; Park, Seongjun; Hwang, Sungwoo

2013-01-01

Graphene heterostructures in which graphene is combined with semiconductors or other layered 2D materials are of considerable interest, as a new class of electronic devices has been realized. Here we propose a technology platform based on graphene-thin-film-semiconductor-metal (GSM) junctions, which can be applied to large-scale and power-efficient electronics compatible with a variety of substrates. We demonstrate wafer-scale integration of vertical field-effect transistors (VFETs) based on graphene-In-Ga-Zn-O (IGZO)-metal asymmetric junctions on a transparent 150 × 150 mm(2) glass. In this system, a triangular energy barrier between the graphene and metal is designed by selecting a metal with a proper work function. We obtain a maximum current on/off ratio (Ion/Ioff) up to 10(6) with an average of 3010 over 2000 devices under ambient conditions. For low-power logic applications, an inverter that combines complementary n-type (IGZO) and p-type (Ge) devices is demonstrated to operate at a bias of only 0.5 V.

Field enhancement in plasmonic nanostructures

NASA Astrophysics Data System (ADS)

Piltan, Shiva; Sievenpiper, Dan

2018-05-01

Efficient generation of charge carriers from a metallic surface is a critical challenge in a wide variety of applications including vacuum microelectronics and photo-electrochemical devices. Replacing semiconductors with vacuum/gas as the medium of electron transport offers superior speed, power, and robustness to radiation and temperature. We propose a metallic resonant surface combining optical and electrical excitations of electrons and significantly reducing powers required using plasmon-induced enhancement of confined electric field. The properties of the device are modeled using the exact solution of the time-dependent Schrödinger equation at the barrier. Measurement results exhibit strong agreement with an analytical solution, and allow us to extract the field enhancement factor at the surface. Significant photocurrents are observed using combination of {{W}} {{{c}}{{m}}}-2 optical power and 10 V DC excitation on the surface. The model suggests optical field enhancement of 3 orders of magnitude at the metal interface due to plasmonic resonance. This simple planar structure provides valuable evidence on the electron emission mechanisms involved and it can be used for implementation of semiconductor compatible vacuum devices.

CarbAl Heat Transfer Material

NASA Technical Reports Server (NTRS)

Fink, Richard

2015-01-01

The increasing use of power electronics, such as high-current semiconductor devices and modules, within space vehicles is driving the need to develop specialty thermal management materials in both the packaging of these discrete devices and the packaging of modules consisting of these device arrays. Developed by Applied Nanotech, Inc. (ANI), CarbAl heat transfer material is uniquely characterized by its low density, high thermal diffusivity, and high thermal conductivity. Its coefficient of thermal expansion (CTE) is similar to most power electronic materials, making it an effective base plate substrate for state-of-the-art silicon carbide (SiC) super junction transistors. The material currently is being used to optimize hybrid vehicle inverter packaging. Adapting CarbAl-based substrates to space applications was a major focus of the SBIR project work. In Phase I, ANI completed modeling and experimentation to validate its deployment in a space environment. Key parameters related to cryogenic temperature scaling of CTE, thermal conductivity, and mechanical strength. In Phase II, the company concentrated on improving heat sinks and thermally conductive circuit boards for power electronic applications.

Architectures for Improved Organic Semiconductor Devices

NASA Astrophysics Data System (ADS)

Beck, Jonathan H.

Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes, semiconductors and substrates compatible with low-temperature, flexible, and oxygenated and aromatic solvent-free fabrication. Materials and processes must be capable of future high volume production in order to enable low costs. In this thesis we explore several techniques to improve organic semiconductor device performance and enable new fabrication processes. In Chapter 2, I describe the integration of sub-optical-wavelength nanostructured electrodes that improve fill factor and power conversion efficiency in organic photovoltaic devices. Photovoltaic fill factor performance is one of the primary challenges facing organic photovoltaics because most organic semiconductors have poor charge mobility. Our electrical and optical measurements and simulations indicate that nanostructured electrodes improve charge extraction in organic photovoltaics. In Chapter 3, I describe a general method for maximizing the efficiency of organic photovoltaic devices by simultaneously optimizing light absorption and charge carrier collection. We analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of organic photovoltaic devices. This technique may be used to improve organic photovoltaic materials with low absorption, or short exciton diffusion and carrier-recombination lengths, opening up the device design space. In Chapter 4, I describe a process for high-quality graphene transfer onto chemically sensitive, weakly interacting organic semiconductor thin-films. Graphene is a promising flexible and highly transparent electrode for organic electronics; however, transferring graphene films onto organic semiconductor devices was previously impossible. We demonstrate a new transfer technique based on an elastomeric stamp coated with an fluorinated polymer release layer. We fabricate three classes of organic semiconductor devices: field effect transistors without high temperature annealing, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices.

Challenges for single molecule electronic devices with nanographene and organic molecules. Do single molecules offer potential as elements of electronic devices in the next generation?

NASA Astrophysics Data System (ADS)

Enoki, Toshiaki; Kiguchi, Manabu

2018-03-01

Interest in utilizing organic molecules to fabricate electronic materials has existed ever since organic (molecular) semiconductors were first discovered in the 1950s. Since then, scientists have devoted serious effort to the creation of various molecule-based electronic systems, such as molecular metals and molecular superconductors. Single-molecule electronics and the associated basic science have emerged over the past two decades and provided hope for the development of highly integrated molecule-based electronic devices in the future (after the Si-based technology era has ended). Here, nanographenes (nano-sized graphene) with atomically precise structures are among the most promising molecules that can be utilized for electronic/spintronic devices. To manipulate single small molecules for an electronic device, a single molecular junction has been developed. It is a powerful tool that allows even small molecules to be utilized. External electric, magnetic, chemical, and mechanical perturbations can change the physical and chemical properties of molecules in a way that is different from bulk materials. Therefore, the various functionalities of molecules, along with changes induced by external perturbations, allows us to create electronic devices that we cannot create using current top-down Si-based technology. Future challenges that involve the incorporation of condensed matter physics, quantum chemistry calculations, organic synthetic chemistry, and electronic device engineering are expected to open a new era in single-molecule device electronic technology.

An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

NASA Astrophysics Data System (ADS)

Shealy, J. R.; Kaper, V.; Tilak, V.; Prunty, T.; Smart, J. A.; Green, B.; Eastman, L. F.

2002-04-01

The AlGaN/GaN high-electron-mobility transistor requires a thermally conducting, semi-insulating substrate to achieve the best possible microwave performance. The semi-insulating SiC substrate is currently the best choice for this device technology; however, fringing fields which penetrate the GaN buffer layer at pinch-off introduce significant substrate conduction at modest drain bias if channel electrons are not well confined to the nitride structure. The addition of an insulating AlN sub-buffer on the semi-insulating SiC substrate suppresses this parasitic conduction, which results in dramatic improvements in the AlGaN/GaN transistor performance. A pronounced reduction in both the gate-lag and the gate-leakage current are observed for structures with the AlN sub-buffer layer. These structures operate up to 50 V drain bias under drive, corresponding to a peak voltage of 80 V, for a 0.30 µm gate length device. The devices have achieved high-efficiency operation at 10 GHz (>70% power-added efficiency in class AB mode at 15 V drain bias) and the highest output power density observed thus far (11.2 W mm-1). Large-periphery devices (1.5 mm gate width) deliver 10 W (continuous wave) of maximum saturated output power at 10 GHz. The growth, processing, and performance of these devices are briefly reviewed.

Initiation of a Relativistic Magnetron

NASA Astrophysics Data System (ADS)

Kaup, D. J.

2003-10-01

We report on recent results in our studies of relativistic magnetrons. Experimentally, these devices have proven to be very difficult to operate, typically cutting off too quickly after they are initialized, and therefore not delivering the power levels expected [1]. Our analysis is based on our model of a crossed-field device, consisting only of its two dominant modes, a DC background and an RF oscillating mode [2]. This approach has produced generally quantitatively correct values for the operating regime and major features of nonrelativistic devices. We have performed a fully electromagnetic, relativistic analysis of a magnetron of the A6 cylindrical configuration. We will show that when the device should generate maximum power, it enters a regime where the DC background could become potentially unstable. In particular, when a nonrelativistic planar device enters the saturation regime, the DC electron density distribution could become unstable if the vertical DC velocity would ever become equal to the magnitude of the vertical RF velocity [3]. We find that during the initiation phase, for the highest power levels of our model of the A6, near the cathode, the DC vertical velocity does become just less than, and definitely on the order of the magnitude of the vertical RF velocity. Consequently, any localized surge in the currents near the cathode, could easily destroy the smooth upward flow of the electrons, drive the DC background unstable, and thereby shut down the operation of the device. [1] Long-pulse relativistic magnetron experiments, M.R. Lopez, R.M. Gilgenbach, Y.Y. Lau, D.W. Jordan, M.D. Johnston, M.C. Jones, V.B. Neculaes, T.A. Spencer, J.W. Luginsland, M.D. Haworth, R.W.Lemke, D. Price, and L. Ludeking, Proc. of SPIE Aerosense 4720, 10-17, (2002). [2] Theoretical modeling of crossed-field electron vacuum devices, D.J. Kaup, Phys. of Plasmas 8, 2473-80 (2001). [3] Initiation and Stationary Operating States in a Crossed-Field Vacuum Electron Device, D. J. Kaup, Proc. of SPIE Aerosense 4720, 67-74, (2002).

Status of thermoelectronic laser energy conversion, TELEC

NASA Technical Reports Server (NTRS)

Britt, E. J.

1982-01-01

A concept known as a thermo-electronic laser energy converter (TELEC), was studied as a method of converting a 10.6 micron CO2 laser beam into electric power. The calculated characteristics of a TELEC seem to be well matched to the requirements of a spacecraft laser energy conversion system. The TELEC is a high power density plasma device which absorbs an intense laser beam by inverse bremsstrahlung with the plasma electrons. In the TELEC process, electromagnetic radiation is absorbed directly in the plasma electrons producing a high electron temperature. The energetic electrons diffuse out of the plasma striking two electrodes which are in contact with the plasma at the boundaries. These two electrodes have different areas: the larger one is designated as the collector, the smaller one is designated as the emitter. The smaller electrode functions as an electron emitter provide continuity of the current. Waste heat is rejected from the collector electrode. An experiment was carried out with a high power laser using a cesium vapor TELEC cell with 30 cm active length. Laser supported plasma were produced in the TELEC device during a number of laser runs over a period of several days. Electric power from the TELEC was observed with currents in the range of several amperes and output potentials of less than 1 volt.

SUNIST Microwave Power System

NASA Astrophysics Data System (ADS)

Feng, Songlin; Yang, Xuanzong; Feng, Chunhua; Wang, Long; Rao, Jun; Feng, Kecheng

2005-06-01

Experiments on the start-up and formation of spherical tokamak plasmas by electron cyclotron heating alone without ohmic heating and electrode discharge assisted electron cyclotron wave current start-up will be carried out on the SUNIST (Sino United Spherical Tokamak) device. The 2.45 GHz/100kW/30 ms microwave power system and 1000 V/50 A power supply for electrode discharge are ready for experiments with non-inductive current drive.

A Highly Stretchable and Washable All-Yarn-Based Self-Charging Knitting Power Textile Composed of Fiber Triboelectric Nanogenerators and Supercapacitors.

PubMed

Dong, Kai; Wang, Yi-Cheng; Deng, Jianan; Dai, Yejing; Zhang, Steven L; Zou, Haiyang; Gu, Bohong; Sun, Baozhong; Wang, Zhong Lin

2017-09-26

Rapid advancements in stretchable and multifunctional wearable electronics impose a challenge on corresponding power devices that they should have comparable portability and stretchability. Here, we report a highly stretchable and washable all-yarn-based self-charging knitting power textile that enables both biomechanical energy harvesting and simultaneously energy storing by hybridizing triboelectrical nanogenerator (TENG) and supercapacitor (SC) into one fabric. With the weft-knitting technique, the power textile is qualified with high elasticity, flexibility, and stretchability, which can adapt to complex mechanical deformations. The knitting TENG fabric is able to generate electric energy with a maximum instantaneous peak power density of ∼85 mW·m -2 and light up at least 124 light-emitting diodes. The all-solid-state symmetrical yarn SC exhibits lightweight, good capacitance, high flexibility, and excellent mechanical and long-term stability, which is suitable for wearable energy storage devices. The assembled knitting power textile is capable of sustainably driving wearable electronics (for example, a calculator or temperature-humidity meter) with energy converted from human motions. Our work provides more opportunities for stretchable multifunctional power sources and potential applications in wearable electronics.

Freestanding Aligned Multi-walled Carbon Nanotubes for Supercapacitor Devices

NASA Astrophysics Data System (ADS)

Moreira, João Vitor Silva; Corat, Evaldo José; May, Paul William; Cardoso, Lays Dias Ribeiro; Lelis, Pedro Almeida; Zanin, Hudson

2016-11-01

We report on the synthesis and electrochemical properties of multi-walled carbon nanotubes (MWCNTs) for supercapacitor devices. Freestanding vertically-aligned MWCNTs and MWCNT powder were grown concomitantly in a one-step chemical vapour deposition process. Samples were characterized by scanning and transmission electron microscopies and Fourier transform infrared and Raman spectroscopies. At similar film thicknesses and surface areas, the freestanding MWCNT electrodes showed higher electrochemical capacitance and gravimetric specific energy and power than the randomly-packed nanoparticle-based electrodes. This suggests that more ordered electrode film architectures facilitate faster electron and ion transport during the charge-discharge processes. Energy storage and supply or supercapacitor devices made from these materials could bridge the gap between rechargeable batteries and conventional high-power electrostatic capacitors.

Experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum tube

NASA Astrophysics Data System (ADS)

Toufexis, Filippos; Tantawi, Sami G.; Jensen, Aaron; Dolgashev, Valery A.; Haase, Andrew; Fazio, Michael V.; Borchard, Philipp

2017-06-01

We report the experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum electronic device, which uses an over-moded spherical sector output cavity. In this device, a pencil electron beam is helically deflected in a transverse deflecting cavity before entering the output cavity. No magnetic field is required to focus or guide the beam. We built and tested a proof-of-principle device with an output frequency of 57.12 GHz. The measured peak power was 52.67 W at the 5th harmonic of the drive frequency. Power at the 4th, 6th, and 7th harmonics was 33.28 dB lower than that at the 5th harmonic.

Experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Toufexis, Filippos; Tantawi, Sami G.; Jensen, Aaron

Here, we report the experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum electronic device, which uses an over-moded spherical sector output cavity. In this device, a pencil electron beam is helically deflected in a transverse deflecting cavity before entering the output cavity. No magnetic field is required to focus or guide the beam. We built and tested a proof-of-principle device with an output frequency of 57.12 GHz. The measured peak power was 52.67 W at the 5th harmonic of the drive frequency. Power at the 4th, 6th, and 7th harmonics was 33.28 dB lower than that at themore » 5th harmonic.« less

Experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum tube

DOE PAGES

Toufexis, Filippos; Tantawi, Sami G.; Jensen, Aaron; ...

2017-06-26

Here, we report the experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum electronic device, which uses an over-moded spherical sector output cavity. In this device, a pencil electron beam is helically deflected in a transverse deflecting cavity before entering the output cavity. No magnetic field is required to focus or guide the beam. We built and tested a proof-of-principle device with an output frequency of 57.12 GHz. The measured peak power was 52.67 W at the 5th harmonic of the drive frequency. Power at the 4th, 6th, and 7th harmonics was 33.28 dB lower than that at themore » 5th harmonic.« less

Silicon on ferroelectic insulator field effect transistor (SOF-FET) a new device for the next generation ultra low power circuits

NASA Astrophysics Data System (ADS)

Es-Sakhi, Azzedin D.

Field effect transistors (FETs) are the foundation for all electronic circuits and processors. These devices have progressed massively to touch its final steps in sub-nanometer level. Left and right proposals are coming to rescue this progress. Emerging nano-electronic devices (resonant tunneling devices, single-atom transistors, spin devices, Heterojunction Transistors rapid flux quantum devices, carbon nanotubes, and nanowire devices) took a vast share of current scientific research. Non-Si electronic materials like III-V heterostructure, ferroelectric, carbon nanotubes (CNTs), and other nanowire based designs are in developing stage to become the core technology of non-classical CMOS structures. FinFET present the current feasible commercial nanotechnology. The scalability and low power dissipation of this device allowed for an extension of silicon based devices. High short channel effect (SCE) immunity presents its major advantage. Multi-gate structure comes to light to improve the gate electrostatic over the channel. The new structure shows a higher performance that made it the first candidate to substitute the conventional MOSFET. The device also shows a future scalability to continue Moor's Law. Furthermore, the device is compatible with silicon fabrication process. Moreover, the ultra-low-power (ULP) design required a subthreshold slope lower than the thermionic-emission limit of 60mV/ decade (KT/q). This value was unbreakable by the new structure (SOI-FinFET). On the other hand most of the previews proposals show the ability to go beyond this limit. However, those pre-mentioned schemes have publicized a very complicated physics, design difficulties, and process non-compatibility. The objective of this research is to discuss various emerging nano-devices proposed for ultra-low-power designs and their possibilities to replace the silicon devices as the core technology in the future integrated circuit. This thesis proposes a novel design that exploits the concept of negative capacitance. The new field effect transistor (FET) based on ferroelectric insulator named Silicon-On-Ferroelectric Insulator Field Effect Transistor (SOF-FET). This proposal is a promising methodology for future ultra-low-power applications, because it demonstrates the ability to replace the silicon-bulk based MOSFET, and offers subthreshold swing significantly lower than 60mV/decade and reduced threshold voltage to form a conducting channel. The SOF-FET can also solve the issue of junction leakage (due to the presence of unipolar junction between the top plate of the negative capacitance and the diffused areas that form the transistor source and drain). In this device the charge hungry ferroelectric film already limits the leakage.

Aging of electronics with application to nuclear power plant instrumentation. [PWR; BWR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Jr, R T; Thome, F V; Craft, C M

1983-01-01

A survey to identify areas of needed research to understand aging mechanisms for electronics in nuclear power plant instrumentation has been completed. The emphasis was on electronic components such as semiconductors, capacitors, and resistors used in safety-related instrumentation in the reactor containment area. The environmental and operational stress factors which may produce degradation during long-term operation were identified. Some attention was also given to humidity effects as related to seals and encapsulants, and failures in printed circuit boards and bonds and solder joints. Results suggest that neutron as well as gamma irradiations should be considered in simulating the aging environmentmore » for electronic components. Radiation dose-rate effects in semiconductor devices and organic capacitors need to be further investigated, as well as radiation-voltage bias synergistic effects in semiconductor devices and leakage and permeation of moisture through seals in electronics packages.« less

Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga2O3, and Diamond.

PubMed

Wellmann, Peter J

2017-11-17

Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies.

Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond

PubMed Central

2017-01-01

Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies. PMID:29200530

Maximum Acceleration Recording Circuit

NASA Technical Reports Server (NTRS)

Bozeman, Richard J., Jr.

1995-01-01

Coarsely digitized maximum levels recorded in blown fuses. Circuit feeds power to accelerometer and makes nonvolatile record of maximum level to which output of accelerometer rises during measurement interval. In comparison with inertia-type single-preset-trip-point mechanical maximum-acceleration-recording devices, circuit weighs less, occupies less space, and records accelerations within narrower bands of uncertainty. In comparison with prior electronic data-acquisition systems designed for same purpose, circuit simpler, less bulky, consumes less power, costs and analysis of data recorded in magnetic or electronic memory devices. Circuit used, for example, to record accelerations to which commodities subjected during transportation on trucks.

Fuel cells for low power applications

NASA Astrophysics Data System (ADS)

Heinzel, A.; Hebling, C.; Müller, M.; Zedda, M.; Müller, C.

Electronic devices show an ever-increasing power demand and thus, require innovative concepts for power supply. For a wide range of power and energy capacity, membrane fuel cells are an attractive alternative to conventional batteries. The main advantages are the flexibility with respect to power and capacity achievable with different devices for energy conversion and energy storage, the long lifetime and long service life, the good ecological balance, very low self-discharge. Therefore, the development of fuel cell systems for portable electronic devices is an attractive, although also a challenging, goal. The fuel for a membrane fuel cell might be hydrogen from a hydride storage system or methanol/water as a liquid alternative. The main differences between the two systems are the much higher power density for hydrogen fuel cells, the higher energy density per weight for the liquid fuel, safety aspects and infrastructure for fuel supply for hydride materials. For different applications, different system designs are required. High power cells are required for portable computers, low power methanol fuel cells required for mobile phones in hybrid systems with batteries and micro-fuel cells are required, e.g. for hand held PCs in the sub-Watt range. All these technologies are currently under development. Performance data and results of simulations and experimental investigations will be presented.

Very High Efficiency, Miniaturized, Long-Lived Alpha Particle Power Source Using Diamond Devices for Extreme Space Environments

NASA Technical Reports Server (NTRS)

Kolawa, Elizabeth A. (Inventor); Patel, Jagdishbhai U. (Inventor); Fleurial, Jean-Pierre (Inventor)

2004-01-01

A power source that converts a-particle energy into electricity by coulomb collision in doped diamond films is described. Alpha particle decay from curium-244 creates electron-hole pairs by free- ing electrons and holes inside the crystal lattice in N- and P-doped diamond films. Ohmic contacts provide electrical connection to an electronic device. Due to the built-in electric field at the rectifying junction across the hT- and P-doped diamond films, the free electrons are constrained to traveling in generally one direction. This one direction then supplies electrons in a manner similar to that of a battery. The radioactive curium layer may be disposed on diamond films for even distribution of a-particle radiation. The resulting power source may be mounted on a diamond substrate that serves to insulate structures below the diamond substrate from a-particle emission. Additional insulation or isolation may be provided in order to prevent damage from a-particle collision. N-doped silicon may be used instead of N-doped diamond.

Biological photovoltaics: intra- and extra-cellular electron transport by cyanobacteria.

PubMed

Bradley, Robert W; Bombelli, Paolo; Rowden, Stephen J L; Howe, Christopher J

2012-12-01

A large variety of new energy-generating technologies are being developed in an effort to reduce global dependence on fossil fuels, and to reduce the carbon footprint of energy generation. The term 'biological photovoltaic system' encompasses a broad range of technologies which all employ biological material that can harness light energy to split water, and then transfer the resulting electrons to an anode for power generation or electrosynthesis. The use of whole cyanobacterial cells is a good compromise between the requirements of the biological material to be simply organized and transfer electrons efficiently to the anode, and also to be robust and able to self-assemble and self-repair. The principle that photosynthetic bacteria can generate and transfer electrons directly or indirectly to an anode has been demonstrated by a number of groups, although the power output obtained from these devices is too low for biological photovoltaic devices to be useful outside the laboratory. Understanding how photosynthetically generated electrons are transferred through and out of the organism is key to improving power output, and investigations on this aspect of the technology are the main focus of the present review.

Replacement for Silicon Devices Looms Big With ORNL Discovery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belianinov, Alex; Ovchinnikova, Olga

2016-04-05

Two-dimensional electronic devices could inch closer to their ultimate promise of low power, high efficiency and mechanical flexibility with a processing technique developed at the Department of Energy’s Oak Ridge National Laboratory.

A simple microbial fuel cell model for improvement of biomedical device powering times.

PubMed

Roxby, Daniel N; Tran, Nham; Nguyen, Hung T

2014-01-01

This study describes a Matlab based Microbial Fuel Cell (MFC) model for a suspended microbial population, in the anode chamber for the use of the MFC in powering biomedical devices. The model contains three main sections including microbial growth, microbial chemical uptake and secretion and electrochemical modeling. The microbial growth portion is based on a Continuously Stirred Tank Reactor (CSTR) model for the microbial growth with substrate and electron acceptors. Microbial stoichiometry is used to determine chemical concentrations and their rates of change and transfer within the MFC. These parameters are then used in the electrochemical modeling for calculating current, voltage and power. The model was tested for typically exhibited MFC characteristics including increased electrode distances and surface areas, overpotentials and operating temperatures. Implantable biomedical devices require long term powering which is the main objective for MFCs. Towards this end, our model was tested with different initial substrate and electron acceptor concentrations, revealing a four-fold increase in concentrations decreased the power output time by 50%. Additionally, the model also predicts that for a 35.7% decrease in specific growth rate, a 50% increase in power longevity is possible.

Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices

NASA Astrophysics Data System (ADS)

Coltrin, Michael E.; Kaplar, Robert J.

2017-02-01

Mobility and critical electric field for bulk AlxGa1-xN alloys across the full composition range (0 ≤ x ≤ 1) are analyzed to address the potential application of this material system for power electronics. Calculation of the temperature-dependent electron mobility includes the potential limitations due to different scattering mechanisms, including alloy, optical polar phonon, deformation potential, and piezoelectric scattering. The commonly used unipolar figure of merit (appropriate for vertical-device architectures), which increases strongly with increasing mobility and critical electric field, is examined across the alloy composition range to estimate the potential performance in power electronics applications. Alloy scattering is the dominant limitation to mobility and thus also for the unipolar figure of merit. However, at higher alloy compositions, the limitations due to alloy scattering are overcome by increased critical electric field. These trade-offs, and their temperature dependence, are quantified in the analysis.

Batteryless implanted echosonometer

NASA Technical Reports Server (NTRS)

Kojima, G. K.

1977-01-01

Miniature ultrasonic echosonometer implanted within laboratory animals obtains energy from RF power oscillator that is electronically transduced via induction loop to power receiving loop located just under animal's skin. Method of powering device offers significant advantages over those in which battery is part of implanted package.

Electroactive polymer-based devices for e-textiles in biomedicine.

PubMed

Carpi, Federico; De Rossi, Danilo

2005-09-01

This paper describes the early conception and latest developments of electroactive polymer (EAP)-based sensors, actuators, electronic components, and power sources, implemented as wearable devices for smart electronic textiles (e-textiles). Such textiles, functioning as multifunctional wearable human interfaces, are today considered relevant promoters of progress and useful tools in several biomedical fields, such as biomonitoring, rehabilitation, and telemedicine. After a brief outline on ongoing research and the first products on e-textiles under commercial development, this paper presents the most highly performing EAP-based devices developed by our lab and other research groups for sensing, actuation, electronics, and energy generation/storage, with reference to their already demonstrated or potential applicability to electronic textiles.

A Fully Implantable Pacemaker for the Mouse: From Battery to Wireless Power

PubMed Central

Zellmer, Erik R.; Weinheimer, Carla J.; MacEwan, Matthew R.; Cui, Sophia X.; Nerbonne, Jeanne M.; Efimov, Igor R.

2013-01-01

Animal models have become a popular platform for the investigation of the molecular and systemic mechanisms of pathological cardiovascular physiology. Chronic pacing studies with implantable pacemakers in large animals have led to useful models of heart failure and atrial fibrillation. Unfortunately, molecular and genetic studies in these large animal models are often prohibitively expensive or not available. Conversely, the mouse is an excellent species for studying molecular mechanisms of cardiovascular disease through genetic engineering. However, the large size of available pacemakers does not lend itself to chronic pacing in mice. Here, we present the design for a novel, fully implantable wireless-powered pacemaker for mice capable of long-term (>30 days) pacing. This design is compared to a traditional battery-powered pacemaker to demonstrate critical advantages achieved through wireless inductive power transfer and control. Battery-powered and wireless-powered pacemakers were fabricated from standard electronic components in our laboratory. Mice (n = 24) were implanted with endocardial, battery-powered devices (n = 14) and epicardial, wireless-powered devices (n = 10). Wireless-powered devices were associated with reduced implant mortality and more reliable device function compared to battery-powered devices. Eight of 14 (57.1%) mice implanted with battery-powered pacemakers died following device implantation compared to 1 of 10 (10%) mice implanted with wireless-powered pacemakers. Moreover, device function was achieved for 30 days with the wireless-powered device compared to 6 days with the battery-powered device. The wireless-powered pacemaker system presented herein will allow electrophysiology studies in numerous genetically engineered mouse models as well as rapid pacing-induced heart failure and atrial arrhythmia in mice. PMID:24194832

Effects of Thermal Resistance on One-Dimensional Thermal Analysis of the Epidermal Flexible Electronic Devices Integrated with Human Skin

NASA Astrophysics Data System (ADS)

Li, He; Cui, Yun

2017-12-01

Nowadays, flexible electronic devices are increasingly used in direct contact with human skin to monitor the real-time health of human body. Based on the Fourier heat conduction equation and Pennes bio-heat transfer equation, this paper deduces the analytical solutions of one - dimensional heat transfer for flexible electronic devices integrated with human skin under the condition of a constant power. The influence of contact thermal resistance between devices and skin is considered as well. The corresponding finite element model is established to verify the correctness of analytical solutions. The results show that the finite element analysis agrees well with the analytical solution. With bigger thermal resistance, temperature increase of skin surface will decrease. This result can provide guidance for the design of flexible electronic devices to reduce the negative impact that exceeding temperature leave on human skin.

A Wearable All-Solid Photovoltaic Textile.

PubMed

Zhang, Nannan; Chen, Jun; Huang, Yi; Guo, Wanwan; Yang, Jin; Du, Jun; Fan, Xing; Tao, Changyuan

2016-01-13

A solution is developed to power portable electronics in a wearable manner by fabricating an all-solid photovoltaic textile. In a similar way to plants absorbing solar energy for photosynthesis, humans can wear the as-fabricated photovoltaic textile to harness solar energy for powering small electronic devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Estimation and harvesting of human heat power for wearable electronic devices

NASA Astrophysics Data System (ADS)

Dziurdzia, P.; Brzozowski, I.; Bratek, P.; Gelmuda, W.; Kos, A.

2016-01-01

The paper deals with the issue of self-powered wearable electronic devices that are capable of harvesting free available energy dissipated by the user in the form of human heat. The free energy source is intended to be used as a secondary power source supporting primary battery in a sensor bracelet. The main scope of the article is a presentation of the concept for a measuring setup used to quantitative estimation of heat power sources in different locations over the human body area. The crucial role in the measurements of the human heat plays a thermoelectric module working in the open circuit mode. The results obtained during practical tests are confronted with the requirements of the dedicated thermoelectric generator. A prototype design of a human warmth energy harvester with an ultra-low power DC-DC converter based on the LTC3108 circuit is analysed.

Ultralow-power electronics for biomedical applications.

PubMed

Chandrakasan, Anantha P; Verma, Naveen; Daly, Denis C

2008-01-01

The electronics of a general biomedical device consist of energy delivery, analog-to-digital conversion, signal processing, and communication subsystems. Each of these blocks must be designed for minimum energy consumption. Specific design techniques, such as aggressive voltage scaling, dynamic power-performance management, and energy-efficient signaling, must be employed to adhere to the stringent energy constraint. The constraint itself is set by the energy source, so energy harvesting holds tremendous promise toward enabling sophisticated systems without straining user lifestyle. Further, once harvested, efficient delivery of the low-energy levels, as well as robust operation in the aggressive low-power modes, requires careful understanding and treatment of the specific design limitations that dominate this realm. We outline the performance and power constraints of biomedical devices, and present circuit techniques to achieve complete systems operating down to power levels of microwatts. In all cases, approaches that leverage advanced technology trends are emphasized.

Extended Pulse-Powered Humidity-Freeze Cycling for Testing Module-Level Power Electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hacke, Peter L; Rodriguez, Miguel; Kempe, Michael D

An EMI suppression capacitor (polypropylene film type) failed by 'popcorning' due to vapor outgassing in pulse powered humidity-freeze cycles. No shorts or shunts could be detected despite mildly corroded metallization visible in the failed capacitor. Humidity-freeze cycling is optimized to break into moisture barriers. However, further studies will be required on additional module level power electronic (MLPE) devices to optimize the stress testing for condensation to precipitate any weakness to short circuiting and other humidity/bias failure modes.

High-Temperature, Wirebondless, Ultracompact Wide Bandgap Power Semiconductor Modules

NASA Technical Reports Server (NTRS)

Elmes, John

2015-01-01

Silicon carbide (SiC) and other wide bandgap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and ultrahigh power density for both space and commercial power electronic systems. However, this great potential is seriously limited by the lack of reliable high-temperature device packaging technology. This Phase II project developed an ultracompact hybrid power module packaging technology based on the use of double lead frames and direct lead frame-to-chip transient liquid phase (TLP) bonding that allows device operation up to 450 degC. The new power module will have a very small form factor with 3-5X reduction in size and weight from the prior art, and it will be capable of operating from 450 degC to -125 degC. This technology will have a profound impact on power electronics and energy conversion technologies and help to conserve energy and the environment as well as reduce the nation's dependence on fossil fuels.

High-Sensitivity Conjugated Polymer/Nanoparticle Nanocomposites for Infrared Sensor Applications

DTIC Science & Technology

2011-03-03

Performances of Photovoltaic devices base d on Thieno[3,4-c] pyrrole -4,6-dione-Based Donor-Acceptor Conjugated Polymers and CdSe Tetrapods Abstract: We...2-yl)thieno[3,2-b] thiophene and thieno[3,4-c] pyrrole -4,6-dione units. The AM1.5 power conversion efficiency of a photovoltaic device containing...photovoltaic devices because of their readily tunable electronic properties. The electron-deficient thieno[3,4-c] pyrrole -4,6-dione (TPD) moiety exhibits a

An Experimental Study of the Plasma Focus Device as a Charged Particle Accelerator

DTIC Science & Technology

1988-11-01

The dense plasma focus has been investigated at many laboratories as a possible fusion device. Typical plasma parameters for this device are electron...temperatures of 1 keV, densities of 10 to the 19th power per cc, and confinement times of 100 ns. Characteristic of the plasma focus discharge are...neutrons. The emphasis of this work is to investigate the electron and ion emission from the plasma focus and the development of appropriate diagnostics to

Infrared power cells for satellite power conversion

NASA Technical Reports Server (NTRS)

Summers, Christopher J.

1991-01-01

An analytical investigation is performed to assess the feasibility of long-wavelength power converters for the direct conversion of IR radiation onto electrical power. Because theses devices need to operate between 5 and 30 um the only material system possible for this application is the HgCdTe system which is currently being developed for IR detectors. Thus solar cell and IR detector theories and technologies are combined. The following subject areas are covered: electronic and optical properties of HgCdTe alloys; optimum device geometry; junction theory; model calculation for homojunction power cell efficiency; and calculation for HgCdTe power cell and power beaming.

Semiconductor optoelectronic devices for free-space optical communications

NASA Technical Reports Server (NTRS)

Katz, J.

1983-01-01

The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.

Microfabricated thermoelectric power-generation devices

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Phillips, Wayne (Inventor); Borshchevsky, Alex (Inventor); Kolawa, Elizabeth A. (Inventor); Ryan, Margaret A. (Inventor); Caillat, Thierry (Inventor); Mueller, Peter (Inventor); Snyder, G. Jeffrey (Inventor); Kascich, Thorsten (Inventor)

2002-01-01

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

Microfabricated thermoelectric power-generation devices

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Ryan, Margaret A. (Inventor); Borshchevsky, Alex (Inventor); Phillips, Wayne (Inventor); Kolawa, Elizabeth A. (Inventor); Snyder, G. Jeffrey (Inventor); Caillat, Thierry (Inventor); Kascich, Thorsten (Inventor); Mueller, Peter (Inventor)

2004-01-01

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

High Current Density Cathodes for Future Vacuum Electronics Applications

DTIC Science & Technology

2008-05-30

Tube - device for generating high levels of RF power DARPA Defense Advanced Research Agency PBG Photonic band gap W- Band 75-111 GHz dB Decibels GHz...Extended interaction klystron 1. Introduction All RF vacuum electron sources require a high quality electron beam for efficient operation. Research on...with long life. Pres- ently, only thermionic dispenser cathodes are practical for high power RF sources. Typical thermi- onic cathodes consists of a

Thermo-piezo-electro-mechanical simulation of AlGaN (aluminum gallium nitride) / GaN (gallium nitride) High Electron Mobility Transistors

NASA Astrophysics Data System (ADS)

Stevens, Lorin E.

Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researchers and scientists throughout the world who are pushing the limits of what modern electronic devices can do. The purpose of the research outlined in this paper was to better understand the mechanical stresses and strains that are present in a hybrid AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) HEMT, while under electrically-active conditions. One of the main issues currently being researched in these devices is their reliability, or their consistent ability to function properly, when subjected to high-power conditions. The researchers of this mechanical study have performed a static (i.e. frequency-independent) reliability analysis using powerful multiphysics computer modeling/simulation to get a better idea of what can cause failure in these devices. Because HEMT transistors are so small (micro/nano-sized), obtaining experimental measurements of stresses and strains during the active operation of these devices is extremely challenging. Physical mechanisms that cause stress/strain in these structures include thermo-structural phenomena due to mismatch in both coefficient of thermal expansion (CTE) and mechanical stiffness between different materials, as well as stress/strain caused by "piezoelectric" effects (i.e. mechanical deformation caused by an electric field, and conversely voltage induced by mechanical stress) in the AlGaN and GaN device portions (both piezoelectric materials). This piezoelectric effect can be triggered by voltage applied to the device's gate contact and the existence of an HEMT-unique "two-dimensional electron gas" (2DEG) at the GaN-AlGaN interface. COMSOL Multiphysics computer software has been utilized to create a finite element (i.e. piece-by-piece) simulation to visualize both temperature and stress/strain distributions that can occur in the device, by coupling together (i.e. solving simultaneously) the thermal, electrical, structural, and piezoelectric effects inherent in the device. The 2DEG has been modeled not with the typically-used self-consistent quantum physics analytical equations, rather as a combined localized heat source* (thermal) and surface charge density* (electrical) boundary condition. Critical values of stress/strain and their respective locations in the device have been identified. Failure locations have been estimated based on the critical values of stress and strain, and compared with reports in literature. The knowledge of the overall stress/strain distribution has assisted in determining the likely device failure mechanisms and possible mitigation approaches. The contribution and interaction of individual stress mechanisms including piezoelectric effects and thermal expansion caused by device self-heating (i.e. fast-moving electrons causing heat) have been quantified. * Values taken from results of experimental studies in literature.

Effects of Lightning Injection on Power-MOSFETs

NASA Technical Reports Server (NTRS)

Celaya, Jose; Saha, Sankalita; Wysocki, Phil; Ely, Jay; Nguyen, Truong; Szatkowski, George; Koppen, Sandra; Mielnik, John; Vaughan, Roger; Goebel, Kai

2009-01-01

Lightning induced damage is one of the major concerns in aircraft health monitoring. Such short-duration high voltages can cause significant damage to electronic devices. This paper presents a study on the effects of lightning injection on power metal-oxide semiconductor field effect transistors (MOSFETs). This approach consisted of pin-injecting lightning waveforms into the gate, drain and/or source of MOSFET devices while they were in the OFF-state. Analysis of the characteristic curves of the devices showed that for certain injection modes the devices can accumulate considerable damage rendering them inoperable. Early results demonstrate that a power MOSFET, even in its off-state, can incur considerable damage due to lightning pin injection, leading to significant deviation in its behavior and performance, and to possibly early device failures.

Harvesting electrostatic energy using super-hydrophobic surfaces

NASA Astrophysics Data System (ADS)

Pociecha, Dominik; Zylka, Pawel

2016-11-01

Almost all environments are now being extensively populated by miniaturized, nano-powered electronic sensor devices communicated together through wireless sensor networks building Internet of Things (IoT). Various energy harvesting techniques are being more and more frequently proposed for battery-less powering of such remote, unattended, implantable or wearable sensors or other low-power electronic gadgets. Energy harvesting relays on extracting energy from the ambient sources readily accessible at the sensor location and converting it into electrical power. The paper exploits possibility of generating electric energy safely accessible for nano-power electronics using tribo-electric and electrostatic induction phenomena displayed at super-hydrophobic surfaces impinged by water droplets. Mechanism of such interaction is discussed and illustrated by experimental results.

Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors

NASA Astrophysics Data System (ADS)

Hsu, M. K.; Chiu, S. Y.; Wu, C. H.; Guo, D. F.; Lour, W. S.

2008-12-01

Pseudomorphic Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors (DH-HEMTs) fabricated with different gate-formation structures of a single-recess gate (SRG), a double-recess gate (DRG) and a field-plate gate (FPG) were comparatively investigated. FPG devices show the best breakdown characteristics among these devices due to great reduction in the peak electric field between the drain and gate electrodes. The measured gate-drain breakdown voltages defined at a 1 mA mm-1 reverse gate-drain current density were -15.3, -19.1 and -26.0 V for SRG, DRG and FPG devices, respectively. No significant differences in their room-temperature common-source current-voltage characteristics were observed. However, FPG devices exhibit threshold voltages being the least sensitive to temperature. Threshold voltages as a function of temperature indicate a threshold-voltage variation as low as -0.97 mV K-1 for FPG devices. According to the 2.4 GHz load-pull power measurement at VDS = 3.0 V and VGS = -0.5 V, the saturated output power (POUT), power gain (GP) and maximum power-added efficiency (PAE) were 10.3 dBm/13.2 dB/36.6%, 11.2 dBm/13.1 dB/39.7% and 13.06 dBm/12.8 dB/47.3%, respectively, for SRG, DRG and FPG devices with a pi-gate in class AB operation. When the FPG device is biased at a VDS of 10 V, the saturated power density is more than 600 mW mm-1.

A cesium TELEC experiment at Lewis Research Center

NASA Technical Reports Server (NTRS)

Britt, E. J.

1979-01-01

The thermoelectronic laser energy converter (TELEC), was studied as a method of converting a 10.6 mm CO2 laser beam into electric power. The calculated characteristics of a TELEC seem to be well matched to the requirements of a spacecraft laser energy conversion system. The TELEC is a high power density plasma device which absorbs an intense laser beam by inverse bremsstrahlung with the plasma electrons. In the TELEC process, electromagnetic radiation is absorbed directly in the plasma electrons producing a high electron temperature. The energetic electrons diffuse out of the plasma striking two electrodes which are in contact with the plasma at the boundaries. These two electrodes have different areas: the larger one is designated as the collector, the smaller one is designated as the emitter. The smaller electrode functions as an electron emitter to provide continuity of the current. Waste heat is rejected from the collector electrode. An experiment was carried out with a high power laser using a cesium vapor TELEC cell with 30 cm active length. Laser supported plasma was produced in the TELEC device during a number of laser runs over a period of several days. Electric power from the TELEC was observed with currents in the range of several amperes and output potentials of less than 1 volt. The magnitudes of these electric outputs were smaller than anticipated but consistent with the power levels of the laser during this experiment.

Using mathematical software to design power electronic converters

NASA Astrophysics Data System (ADS)

Hinov, Nikolay; Hranov, Tsveti

2017-12-01

In the paper is presented mathematical software, which was used for design of power electronic devices. Examined to different example, which are applied to designing electronic converters. In this way, it is possible to play different combinations of the circuit elements by simple means, thus optimizing according to certain criteria and limitations. Free software with a simple and intuitive interface is selected. No special user training is required to work with it and no further training is required. The use of mathematical software greatly facilitates the design, assists and makes it attractive and accessible to a wider range of students and specialists in power electronics training.

A Manufacturing Cost and Supply Chain Analysis of SiC Power Electronics Applicable to Medium-Voltage Motor Drives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horowitz, Kelsey; Remo, Timothy; Reese, Samantha

Wide bandgap (WBG) semiconductor devices are increasingly being considered for use in certain power electronics applications, where they can improve efficiency, performance, footprint, and, potentially, total system cost compared to systems using traditional silicon (Si) devices. Silicon carbide (SiC) devices in particular -- which are currently more mature than other WBG devices -- are poised for growth in the coming years. Today, the manufacturing of SiC wafers is concentrated in the United States, and chip production is split roughly equally between the United States, Japan, and Europe. Established contract manufacturers located throughout Asia typically carry out manufacturing of WBG powermore » modules. We seek to understand how global manufacturing of SiC components may evolve over time by illustrating the regional cost drivers along the supply chain and providing an overview of other factors that influence where manufacturing is sited. We conduct this analysis for a particular case study where SiC devices are used in a medium-voltage motor drive.« less

Thermoelectric Properties of Complex Oxide Heterostructures

NASA Astrophysics Data System (ADS)

Cain, Tyler Andrew

Thermoelectrics are a promising energy conversion technology for power generation and cooling systems. The thermal and electrical properties of the materials at the heart of thermoelectric devices dictate conversion efficiency and technological viability. Studying the fundamental properties of potentially new thermoelectric materials is of great importance for improving device performance and understanding the electronic structure of materials systems. In this dissertation, investigations on the thermoelectric properties of a prototypical complex oxide, SrTiO3, are discussed. Hybrid molecular beam epitaxy (MBE) is used to synthesize La-doped SrTiO3 thin films, which exhibit high electron mobilities and large Seebeck coefficients resulting in large thermoelectric power factors at low temperatures. Large interfacial electron densities have been observed in SrTiO3/RTiO 3 (R=Gd,Sm) heterostructures. The thermoelectric properties of such heterostructures are investigated, including the use of a modulation doping approach to control interfacial electron densities. Low-temperature Seebeck coefficients of extreme electron-density SrTiO3 quantum wells are shown to provide insight into their electronic structure.

Simulation of electric vehicles with hybrid power systems

NASA Astrophysics Data System (ADS)

Burke, A. F.; Cole, G. H.

Computer programs for the simulation of the operation of electric vehicles with hybrid power systems are described. These programs treat cases in which high energy density ultracapacitors or high power density pulse batteries are used to load level the main energy storage battery in the vehicle. A generalized control strategy for splitting the power between the main battery and the pulse power devices is implemented such that the user can specify the nominal battery power as a function of the state-of-charge of the ultracapacitor or pulse power battery. The programs display graphically on the screen, as they run, the power from both the main battery and the pulse power device and the state-of-charge of the pulse power device. After each run is completed, a summary is printed out from which the effect of load leveling the battery on vehicle range and energy consumption can be determined. Default input files are provided with the programs so various combinations of vehicles, driveline components, and batteries of special current interest to the EV community can be run with either type of pulse power device. Typical simulation results are shown including cases in which the pulse power devices are connected in parallel with the main battery without interface electronics.

Processing and characterization of device solder interconnection and module attachment for power electronics modules

NASA Astrophysics Data System (ADS)

Haque, Shatil

This research is focused on the processing of an innovative three-dimensional packaging architecture for power electronics building blocks with soldered device interconnections and subsequent characterization of the module's critical interfaces. A low-cost approach termed metal posts interconnected parallel plate structure (MPIPPS) was developed for packaging high-performance modules of power electronics building blocks (PEBB). The new concept implemented direct bonding of copper posts, not wire bonding of fine aluminum wires, to interconnect power devices as well as joining the different circuit planes together. We have demonstrated the feasibility of this packaging approach by constructing PEBB modules (consisting of Insulated Gate Bipolar Transistors (IGBTs), diodes, and a few gate driver elements and passive components). In the 1st phase of module fabrication with IGBTs with Si3N 4 passivation, we had successfully fabricated packaged devices and modules using the MPIPPS technique. These modules were tested electrically and thermally, and they operated at pulse-switch and high power stages up to 6kW. However, in the 2nd phase of module fabrication with polyimide passivated devices, we experienced significant yield problems due to metallization difficulties of these devices. The under-bump metallurgy scheme for the development of a solderable interface involved sputtering of Ti-Ni-Cu and Cr-Cu, and an electroless deposition of Zn-Ni-Au metallization. The metallization process produced excellent yield in the case of Si3N4 passivated devices. However, under the same metallization schemes, devices with a polyimide passivation exhibited inconsistent electrical contact resistance. We found that organic contaminants such as hydrocarbons remain in the form of thin monolayers on the surface, even in the case of as-received devices from the manufacturer. Moreover, in the case of polyimide passivated devices, plasma cleaning introduced a few carbon constituents on the surface, which was not observed in the case of Si3N4 passivated devices. X-Ray Photoelectron Spectroscopy (XPS) Spectra showed evidence of possible carbon contaminants, such as carbide (˜282.9eV) and graphite (˜284.3eV) on the surface at binding energies below the binding energy of the hydrocarbon peak (C 1s at 285eV). Whereas above the hydrocarbon peak energy level, carbon-nitrogen compounds, single bond carbon compounds (˜285.9eV) and double bond carbon compounds (˜288.5eV) were evident. The majority of the carbon composition on the pad surface was associated with hydrocarbons, which were hydrophobic in nature, thus making the device contact pad less wettable. (Abstract shortened by UMI.)

Ultra-low-power conversion and management techniques for thermoelectric energy harvesting applications

NASA Astrophysics Data System (ADS)

Fleming, Jerry W.

2010-04-01

Thermoelectric energy harvesting has increasingly gained acceptance as a potential power source that can be used for numerous commercial and military applications. However, power electronic designers have struggled to incorporate energy harvesting methods into their designs due to the relatively small voltage levels available from many harvesting device technologies. In order to bridge this gap, an ultra-low input voltage power conversion method is needed to convert small amounts of scavenged energy into a usable form of electricity. Such a method would be an enabler for new and improved medical devices, sensor systems, and other portable electronic products. This paper addresses the technical challenges involved in ultra-low-voltage power conversion by providing a solution utilizing novel power conversion techniques and applied technologies. Our solution utilizes intelligent power management techniques to control unknown startup conditions. The load and supply management functionality is also controlled in a deterministic manner. The DC to DC converter input operating voltage is 20mV with a conversion efficiency of 90% or more. The output voltage is stored into a storage device such as an ultra-capacitor or lithium-ion battery for use during brown-out or unfavorable harvesting conditions. Applications requiring modular, low power, extended maintenance cycles, such as wireless instrumentation would significantly benefit from the novel power conversion and harvesting techniques outlined in this paper.

A Thermal and Electrical Analysis of Power Semiconductor Devices

NASA Technical Reports Server (NTRS)

Vafai, Kambiz

1997-01-01

The state-of-art power semiconductor devices require a thorough understanding of the thermal behavior for these devices. Traditional thermal analysis have (1) failed to account for the thermo-electrical interaction which is significant for power semiconductor devices operating at high temperature, and (2) failed to account for the thermal interactions among all the levels involved in, from the entire device to the gate micro-structure. Furthermore there is a lack of quantitative studies of the thermal breakdown phenomenon which is one of the major failure mechanisms for power electronics. This research work is directed towards addressing. Using a coupled thermal and electrical simulation, in which the drift-diffusion equations for the semiconductor and the energy equation for temperature are solved simultaneously, the thermo-electrical interactions at the micron scale of various junction structures are thoroughly investigated. The optimization of gate structure designs and doping designs is then addressed. An iterative numerical procedure which incorporates the thermal analysis at the device, chip and junction levels of the power device is proposed for the first time and utilized in a BJT power semiconductor device. In this procedure, interactions of different levels are fully considered. The thermal stability issue is studied both analytically and numerically in this research work in order to understand the mechanism for thermal breakdown.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shwehdi, M.H.; Khan, A.Z.

Building automation technology is rapidly developing towards more reliable communication systems, devices that control electronic equipments. These equipment if controlled leads to efficient energy management, and savings on the monthly electricity bill. Power Line communication (PLC) has been one of the dreams of the electronics industry for decades, especially for building automation. It is the purpose of this paper to demonstrate communication methods among electronic control devices through an AC power line carrier within the buildings for more efficient energy control. The paper outlines methods of communication over a powerline, namely the X-10 and CE bus. It also introduces themore » spread spectrum technology as to increase speed to 100--150 times faster than the X-10 system. The powerline carrier has tremendous applications in the field of building automation. The paper presents an attempt to realize a smart house concept, so called, in which all home electronic devices from a coffee maker to a water heater microwave to chaos robots will be utilized by an intelligent network whenever one wishes to do so. The designed system may be applied very profitably to help in energy management for both customer and utility.« less

Influence of confinement layers in the emitting layer of the blue phosphorescent organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Ji, Chang-Yan; Gu, Zheng-Tian; Kou, Zhi-Qi

2016-10-01

The electrical and optical properties of the blue phosphorescent organic light-emitting diodes (PHOLEDs) can be affected by the various structure of confinement layer in the emitting layer (EML). A series of devices with different electron or hole confinement layer (TCTA or Bphen) are fabricated, it is more effective to balance charge carriers injection for the device with the double electron confinement layers structure, the power efficiency and luminance can reach 17.7 lm/W (at 103 cd/m2) and 3536 cd/m2 (at 8 V). In case of the same double electron confinement layers, another series of devices with different profile of EML are fabricated by changing the confinement layers position, the power efficiency and luminance can be improved to 21.7 lm/W (at 103 cd/m2) and 7674 cd/m2 (at 8 V) when the thickness of EML separated by confinement layers increases gradually from the hole injection side to the electron injection side, the driving voltage can also be reduced.

Replacement for Silicon Devices Looms Big With ORNL Discovery

ScienceCinema

Belianinov, Alex; Ovchinnikova, Olga

2018-05-22

Two-dimensional electronic devices could inch closer to their ultimate promise of low power, high efficiency and mechanical flexibility with a processing technique developed at the Department of Energy’s Oak Ridge National Laboratory.

An ocean kinetic energy converter for low-power applications using piezoelectric disk elements

NASA Astrophysics Data System (ADS)

Viñolo, C.; Toma, D.; Mànuel, A.; del Rio, J.

2013-09-01

The main problem facing long-term electronic system deployments in the sea, is to find a feasible way to supply them with the power they require. Harvesting mechanical energy from the ocean wave oscillations and converting it into electrical energy, provides an alternative method for creating self-contained power sources. However, the very low and varying frequency of ocean waves, which generally varies from 0.1 Hz to 2 Hz, presents a hurdle which has to be overcome if this mechanical energy is to be harvested. In this paper, a new sea wave kinetic energy converter is described using low-cost disk piezoelectric elements, which has no dependence on their excitement frequency, to feed low-consumption maritime-deployed electronic devices. The operating principles of the piezoelectric device technique are presented, including analytical formulations describing the transfer of energy. Finally, a prototypical design, which generates electrical energy from the motion of a buoy, is introduced. The paper concludes with the the behavior study of the piezoelectric prototype device as a power generator.

A wearable device for continuous monitoring of heart mechanical function based on impedance cardiography.

PubMed

Panfili, G; Piccini, L; Maggi, L; Parini, S; Andreoni, G

2006-01-01

In this study we explored the possibility to realize a low power device for Cardiac Output continuous monitoring based on impedance cardiography technique. We assessed the possibility to develop a system able to record data allow an intra-subjective analysis based on the daily variations of this measure. The device was able to acquire and to send signals using a wireless Bluetooth transmission. The electronic circuit was designed in order to minimize power consumption, dimension and weight. The reported results were interesting for what concerns the power consumption and then noise level. In this way was obtained a wearable device that will permit to define specific clinical protocols based on continuous monitoring of the Cardiac Output signal.

Energy Harvesting by Subcutaneous Solar Cells: A Long-Term Study on Achievable Energy Output.

PubMed

Bereuter, L; Williner, S; Pianezzi, F; Bissig, B; Buecheler, S; Burger, J; Vogel, R; Zurbuchen, A; Haeberlin, A

2017-05-01

Active electronic implants are powered by primary batteries, which induces the necessity of implant replacement after battery depletion. This causes repeated interventions in a patients' life, which bears the risk of complications and is costly. By using energy harvesting devices to power the implant, device replacements may be avoided and the device size may be reduced dramatically. Recently, several groups presented prototypes of implants powered by subcutaneous solar cells. However, data about the expected real-life power output of subcutaneously implanted solar cells was lacking so far. In this study, we report the first real-life validation data of energy harvesting by subcutaneous solar cells. Portable light measurement devices that feature solar cells (cell area = 3.6 cm 2 ) and continuously measure a subcutaneous solar cell's output power were built. The measurement devices were worn by volunteers in their daily routine in summer, autumn and winter. In addition to the measured output power, influences such as season, weather and human activity were analyzed. The obtained mean power over the whole study period was 67 µW (=19 µW cm -2 ), which is sufficient to power e.g. a cardiac pacemaker.

Characterization and device applications of ZnO films deposited by high power impulse magnetron sputtering (HiPIMS)

NASA Astrophysics Data System (ADS)

Partridge, J. G.; Mayes, E. L. H.; McDougall, N. L.; Bilek, M. M. M.; McCulloch, D. G.

2013-04-01

ZnO films have been reactively deposited on sapphire substrates at 300 °C using a high impulse power magnetron sputtering deposition system and characterized structurally, optically and electronically. The unintentionally doped n-type ZnO films exhibit high transparency, moderate carrier concentration (˜5 × 1018 cm-3) and a Hall mobility of 8.0 cm2 V-1 s-1, making them suitable for electronic device applications. Pt/ZnO Schottky diodes formed on the HiPIMS deposited ZnO exhibited rectification ratios up to 104 at ±2 V and sensitivity to UV light.

European roadmap on superconductive electronics - status and perspectives

NASA Astrophysics Data System (ADS)

Anders, S.; Blamire, M. G.; Buchholz, F.-Im.; Crété, D.-G.; Cristiano, R.; Febvre, P.; Fritzsch, L.; Herr, A.; Il'ichev, E.; Kohlmann, J.; Kunert, J.; Meyer, H.-G.; Niemeyer, J.; Ortlepp, T.; Rogalla, H.; Schurig, T.; Siegel, M.; Stolz, R.; Tarte, E.; ter Brake, H. J. M.; Toepfer, H.; Villegier, J.-C.; Zagoskin, A. M.; Zorin, A. B.

2010-12-01

Executive SummaryFor four decades semiconductor electronics has followed Moore’s law: with each generation of integration the circuit features became smaller, more complex and faster. This development is now reaching a wall so that smaller is no longer any faster. The clock rate has saturated at about 3-5 GHz and the parallel processor approach will soon reach its limit. The prime reason for the limitation the semiconductor electronics experiences is not the switching speed of the individual transistor, but its power dissipation and thus heat. Digital superconductive electronics is a circuit- and device-technology that is inherently faster at much less power dissipation than semiconductor electronics. It makes use of superconductors and Josephson junctions as circuit elements, which can provide extremely fast digital devices in a frequency range - dependent on the material - of hundreds of GHz: for example a flip-flop has been demonstrated that operated at 750 GHz. This digital technique is scalable and follows similar design rules as semiconductor devices. Its very low power dissipation of only 0.1 μW per gate at 100 GHz opens the possibility of three-dimensional integration. Circuits like microprocessors and analogue-to-digital converters for commercial and military applications have been demonstrated. In contrast to semiconductor circuits, the operation of superconducting circuits is based on naturally standardized digital pulses the area of which is exactly the flux quantum Φ0. The flux quantum is also the natural quantization unit for digital-to-analogue and analogue-to-digital converters. The latter application is so precise, that it is being used as voltage standard and that the physical unit ‘Volt’ is defined by means of this standard. Apart from its outstanding features for digital electronics, superconductive electronics provides also the most sensitive sensor for magnetic fields: the Superconducting Quantum Interference Device (SQUID). Amongst many other applications SQUIDs are used as sensors for magnetic heart and brain signals in medical applications, as sensor for geological surveying and food-processing and for non-destructive testing. As amplifiers of electrical signals, SQUIDs can nearly reach the theoretical limit given by Quantum Mechanics. A further important field of application is the detection of very weak signals by ‘transition-edge’ bolometers, superconducting nanowire single-photon detectors, and superconductive tunnel junctions. Their application as radiation detectors in a wide frequency range, from microwaves to X-rays is now standard. The very low losses of superconductors have led to commercial microwave filter designs that are now widely used in the USA in base stations for cellular phones and in military communication applications. The number of demonstrated applications is continuously increasing and there is no area in professional electronics, in which superconductive electronics cannot be applied and surpasses the performance of classical devices. Superconductive electronics has to be cooled to very low temperatures. Whereas this was a bottleneck in the past, cooling techniques have made a huge step forward in recent years: very compact systems with high reliability and a wide range of cooling power are available commercially, from microcoolers of match-box size with milli-Watt cooling power to high-reliability coolers of many Watts of cooling power for satellite applications. Superconductive electronics will not replace semiconductor electronics and similar room-temperature techniques in standard applications, but for those applications which require very high speed, low-power consumption, extreme sensitivity or extremely high precision, superconductive electronics is superior to all other available techniques. To strengthen the European competitiveness in superconductor electronics research projects have to be set-up in the following field: Ultra-sensitive sensing and imaging. Quantum measurement instrumentation. Advanced analogue-to-digital converters. Superconductive electronics technology.

Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation using Superconducting Tunnel Junctions with Radio-Frequency Single-Electron Transistors

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Wollack, E. J.; Schoelkopf, R. J.; Krebs, Carolyn (Technical Monitor)

2002-01-01

The science drivers for the SPIRIT/SPECS missions demand sensitive, fast, compact, low-power, large-format detector arrays for high resolution imaging and spectroscopy in the far infrared and submillimeter. Detector arrays with 10,000 pixels and sensitivity less than 10(exp 20)-20 W/Hz(exp 20)0.5 are needed. Antenna-coupled superconducting tunnel junction detectors with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique when forming arrays. The device consists of an antenna structure to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure currents through tunnel junction contacts to the absorber volume. We will describe optimization of device parameters, and recent results on fabrication techniques for producing devices with high yield for detector arrays. We will also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

A summary of the research program in the broad field of electronics

NASA Technical Reports Server (NTRS)

1972-01-01

Summary reports of research projects covering solid state materials, semiconductors and devices, quantum electronics, plasmas, applied electromagnetics, electrical engineering systems to include control communication, computer and power systems, biomedical engineering and mathematical biosciences.

Market survey of fuel cells in Mexico: Niche for low power portable systems

NASA Astrophysics Data System (ADS)

Ramírez-Salgado, Joel; Domínguez-Aguilar, Marco A.

This work provides an overview of the potential market in Mexico for portable electronic devices to be potentially powered by direct methanol fuel cells. An extrapolation method based on data published in Mexico and abroad served to complete this market survey. A review of electronics consumption set the basis for the future forecast and technology assimilation. The potential market for fuel cells for mobile phones in Mexico will be around 5.5 billion USD by 2013, considering a cost of 41 USD per cell in a market of 135 million mobile phones. Likewise, the market for notebook computers, PDAs and other electronic devices will likely grow in the future, with a combined consumption of fuel cell technology equivalent to 1.6 billion USD by 2014.

Relativistic electron beam device

DOEpatents

Freeman, J.R.; Poukey, J.W.; Shope, S.L.; Yonas, G.

1975-07-01

A design is given for an electron beam device for irradiating spherical hydrogen isotope bearing targets. The accelerator, which includes hollow cathodes facing each other, injects an anode plasma between the cathodes and produces an approximately 10 nanosecond, megajoule pulse between the anode plasma and the cathodes. Targets may be repetitively positioned within the plasma between the cathodes, and accelerator diode arrangement permits materials to survive operation in a fusion power source. (auth)

Self-healing of cracks in Ag joining layer for die-attachment in power devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Chuantong, E-mail: chenchuantong@sanken.osaka-u.ac.jp; Nagao, Shijo; Suganuma, Katsuaki

Sintered silver (Ag) joining has attracted significant interest in power devices modules for its ability to form stable joints with a porous interconnection layer. A function for the self-healing of cracks in sintered porous Ag interlayers at high temperatures is discovered and reported here. A crack which was prepared on a Ag joining layer was closed after heating at 200 °C in air. The tensile strength of pre-cracked Ag joining layer specimens recovers to the value of non-cracked specimens after heating treatment. Transmission electron microscopy (TEM) was used to probe the self-healing mechanism. TEM images and electron diffraction patterns show thatmore » a large quantity of Ag nanoparticles formed at the gap with the size less than 10 nm, which bridges the crack in the self-healing process. This discovery provides additional motivation for the application of Ag as an interconnection material for power devices at high temperature.« less

Integration of OLEDs in biomedical sensor systems: design and feasibility analysis

NASA Astrophysics Data System (ADS)

Rai, Pratyush; Kumar, Prashanth S.; Varadan, Vijay K.

2010-04-01

Organic (electronic) Light Emitting Diodes (OLEDs) have been shown to have applications in the field of lighting and flexible display. These devices can also be incorporated in sensors as light source for imaging/fluorescence sensing for miniaturized systems for biomedical applications and low-cost displays for sensor output. The current device capability aligns well with the aforementioned applications as low power diffuse lighting and momentary/push button dynamic display. A top emission OLED design has been proposed that can be incorporated with the sensor and peripheral electrical circuitry, also based on organic electronics. Feasibility analysis is carried out for an integrated optical imaging/sensor system, based on luminosity and spectrum band width. A similar study is also carried out for sensor output display system that functions as a pseudo active OLED matrix. A power model is presented for device power requirements and constraints. The feasibility analysis is also supplemented with the discussion about implementation of ink-jet printing and stamping techniques for possibility of roll to roll manufacturing.

A novel coaxial Ku-band transit radiation oscillator without external guiding magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ling, Junpu, E-mail: lingjunpu@163.com; Zhang, Jiande; He, Juntao

2014-02-15

A novel coaxial transit radiation oscillator without external guiding magnetic field is designed to generate high power microwave at Ku-band. By using a coaxial structure, the space-charge potential energy is suppressed significantly, that is good for enhancing efficient beam-wave interaction. In order to improve the transmission stability of the unmagnetized intense relativistic electron beam, a Pierce-like cathode is employed in the novel device. By contrast with conventional relativistic microwave generators, this kind of device has the advantages of high stability, non-guiding magnetic field, and high efficiency. Moreover, with the coaxial design, it is possible to improve the power-handing capacity bymore » increasing the radial dimension of the Ku-band device. With a 550 keV and 7.5 kA electron beam, a 1.25 GW microwave pulse at 12.08 GHz has been obtained in the simulation. The power conversion efficiency is about 30%.« less

Impact of Total Ionizing Dose Radiation Testing and Long-Term Thermal Cycling on the Operation of CMF20120D Silicon Carbide Power MOSFET

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Scheidegger, Robert J.; Lauenstein, Jean-Marie; Casey, Megan; Scheick, Leif; Hammoud, Ahmad

2013-01-01

Power systems designed for use in NASA space missions are required to work reliably under harsh conditions including radiation, thermal cycling, and extreme temperature exposures. Silicon carbide devices show great promise for use in future power electronics systems, but information pertaining to performance of the devices in the space environment is very scarce. A silicon carbide N-channel enhancement-mode power MOSFET called the CMF20120 is of interest for use in space environments. Samples of the device were exposed to radiation followed by long-term thermal cycling to address their reliability for use in space applications. The results of the experimental work are presentd and discussed.

Nanoscale Devices for Solid State Refrigeration and Power Generation

DTIC Science & Technology

2004-01-01

techniques such as ballistic electron emission microscopy, scanning thermal microscopy, X - ray photoelectron emission spectroscopy, etc. The main emphasis is...0-7803-8363- X /04/$20.00 ©2004 IEEE 20th IEEE SEMI-THERM Symposium Nanoscale Devices for Solid State Refrigeration and Power Generation Ali...theories [9,23,24]. Since thermal conductivity is an average bulk effect involving many lattice vibrations (phonons modes), it is hard to

Large-Area Permanent-Magnet ECR Plasma Source

NASA Technical Reports Server (NTRS)

Foster, John E.

2007-01-01

A 40-cm-diameter plasma device has been developed as a source of ions for material-processing and ion-thruster applications. Like the device described in the immediately preceding article, this device utilizes electron cyclotron resonance (ECR) excited by microwave power in a magnetic field to generate a plasma in an electrodeless (noncontact) manner and without need for an electrically insulating, microwave-transmissive window at the source. Hence, this device offers the same advantages of electrodeless, windowless design - low contamination and long operational life. The device generates a uniform, high-density plasma capable of sustaining uniform ion-current densities at its exit plane while operating at low pressure [<10(exp -4) torr (less than about 1.3 10(exp -2) Pa)] and input power <200 W at a frequency of 2.45 GHz. Though the prototype model operates at 2.45 GHz, operation at higher frequencies can be achieved by straightforward modification to the input microwave waveguide. Higher frequency operation may be desirable in those applications that require even higher background plasma densities. In the design of this ECR plasma source, there are no cumbersome, power-hungry electromagnets. The magnetic field in this device is generated by a permanent-magnet circuit that is optimized to generate resonance surfaces. The microwave power is injected on the centerline of the device. The resulting discharge plasma jumps into a "high mode" when the input power rises above 150 W. This mode is associated with elevated plasma density and high uniformity. The large area and uniformity of the plasma and the low operating pressure are well suited for such material-processing applications as etching and deposition on large silicon wafers. The high exit-plane ion-current density makes it possible to attain a high rate of etching or deposition. The plasma potential is <3 V low enough that there is little likelihood of sputtering, which, in plasma processing, is undesired because it is associated with erosion and contamination. The electron temperature is low and does not vary appreciably with power.

A smart mobile pouch as a biomechanical energy harvester towards self-powered smart wireless power transfer applications.

PubMed

Chandrasekhar, Arunkumar; Alluri, Nagamalleswara Rao; Sudhakaran, M S P; Mok, Young Sun; Kim, Sang-Jae

2017-07-20

A Smart Mobile Pouch Triboelectric Nanogenerator (SMP-TENG) is introduced as a promising eco-friendly approach for scavenging biomechanical energy for powering next generation intelligent devices and smart phones. This is a cost-effective and robust method for harvesting energy from human motion, by utilizing worn fabrics as a contact material. The SMP-TENG is capable of harvesting energy in two operational modes: lateral sliding and vertical contact and separation. Moreover, the SMP-TENG can also act as a self-powered emergency flashlight and self-powered pedometer during normal human motion. A wireless power transmission setup integrated with SMP-TENG is demonstrated. This upgrades the traditional energy harvesting device into a self-powered wireless power transfer SMP-TENG. The wirelessly transferred power can be used to charge a Li-ion battery and light LEDs. The SMP-TENG opens a wide range of opportunities in the field of self-powered devices and low maintenance energy harvesting systems for portable and wearable electronic gadgets.

Development of 8-hydroxyquinoline metal based organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Feng, Xiaodong

Because of its potential application for flat panel displays, solid-state lighting and 1.5 mum emitter for fiber optical communications, organic light-emitting diodes (OLEDs) have been intensively researched. One of the major problems with current OLED technology relates to inefficient electron injection at the cathode interface, which causes high driving voltage and poor device stability. Making a low resistance cathode contact for electron injection is critical to device performance. This work mainly focuses on cathode interface design and engineering. The Ohmic contact using a structure of C60/LiF/Al has been developed in electron only devices. It is found that application of the C60/LiF/Al contact to Alq based OLEDs leads to a dramatic reduction in driving voltages, a significant improvement in power efficiency, and a much slower aging process. A new cathode structure based on metal-organic-metal (MOM) tri-layer films has been developed. It is found that MOM cathodes reduce reflection by deconstructive optical interference from two metal films. The absolute reflectance from the MOM tr-ilayer films can be reduced to as low as 7% in the visible light spectrum. In actual working devices, the reflectance can be reduced from ˜80% to ˜20%. MOM cathodes provide a potential low-cost solution for high contrast full-color OLED displays. Low voltage Erq based OLEDs at 1.5 mum emission have been developed. The Erq/Ag cathode interface has been found to be efficient for electron injection. Dramatic improvement in driving voltage and power efficiency has been realized by implementing Bphen and C60 into Erq devices as an electron transport layer. Integration of Erq devices on Si wafers has also been demonstrated.

Single-chip microprocessor that communicates directly using light

NASA Astrophysics Data System (ADS)

Sun, Chen; Wade, Mark T.; Lee, Yunsup; Orcutt, Jason S.; Alloatti, Luca; Georgas, Michael S.; Waterman, Andrew S.; Shainline, Jeffrey M.; Avizienis, Rimas R.; Lin, Sen; Moss, Benjamin R.; Kumar, Rajesh; Pavanello, Fabio; Atabaki, Amir H.; Cook, Henry M.; Ou, Albert J.; Leu, Jonathan C.; Chen, Yu-Hsin; Asanović, Krste; Ram, Rajeev J.; Popović, Miloš A.; Stojanović, Vladimir M.

2015-12-01

Data transport across short electrical wires is limited by both bandwidth and power density, which creates a performance bottleneck for semiconductor microchips in modern computer systems—from mobile phones to large-scale data centres. These limitations can be overcome by using optical communications based on chip-scale electronic-photonic systems enabled by silicon-based nanophotonic devices8. However, combining electronics and photonics on the same chip has proved challenging, owing to microchip manufacturing conflicts between electronics and photonics. Consequently, current electronic-photonic chips are limited to niche manufacturing processes and include only a few optical devices alongside simple circuits. Here we report an electronic-photonic system on a single chip integrating over 70 million transistors and 850 photonic components that work together to provide logic, memory, and interconnect functions. This system is a realization of a microprocessor that uses on-chip photonic devices to directly communicate with other chips using light. To integrate electronics and photonics at the scale of a microprocessor chip, we adopt a ‘zero-change’ approach to the integration of photonics. Instead of developing a custom process to enable the fabrication of photonics, which would complicate or eliminate the possibility of integration with state-of-the-art transistors at large scale and at high yield, we design optical devices using a standard microelectronics foundry process that is used for modern microprocessors. This demonstration could represent the beginning of an era of chip-scale electronic-photonic systems with the potential to transform computing system architectures, enabling more powerful computers, from network infrastructure to data centres and supercomputers.

Single-chip microprocessor that communicates directly using light.

PubMed

Sun, Chen; Wade, Mark T; Lee, Yunsup; Orcutt, Jason S; Alloatti, Luca; Georgas, Michael S; Waterman, Andrew S; Shainline, Jeffrey M; Avizienis, Rimas R; Lin, Sen; Moss, Benjamin R; Kumar, Rajesh; Pavanello, Fabio; Atabaki, Amir H; Cook, Henry M; Ou, Albert J; Leu, Jonathan C; Chen, Yu-Hsin; Asanović, Krste; Ram, Rajeev J; Popović, Miloš A; Stojanović, Vladimir M

2015-12-24

Data transport across short electrical wires is limited by both bandwidth and power density, which creates a performance bottleneck for semiconductor microchips in modern computer systems--from mobile phones to large-scale data centres. These limitations can be overcome by using optical communications based on chip-scale electronic-photonic systems enabled by silicon-based nanophotonic devices. However, combining electronics and photonics on the same chip has proved challenging, owing to microchip manufacturing conflicts between electronics and photonics. Consequently, current electronic-photonic chips are limited to niche manufacturing processes and include only a few optical devices alongside simple circuits. Here we report an electronic-photonic system on a single chip integrating over 70 million transistors and 850 photonic components that work together to provide logic, memory, and interconnect functions. This system is a realization of a microprocessor that uses on-chip photonic devices to directly communicate with other chips using light. To integrate electronics and photonics at the scale of a microprocessor chip, we adopt a 'zero-change' approach to the integration of photonics. Instead of developing a custom process to enable the fabrication of photonics, which would complicate or eliminate the possibility of integration with state-of-the-art transistors at large scale and at high yield, we design optical devices using a standard microelectronics foundry process that is used for modern microprocessors. This demonstration could represent the beginning of an era of chip-scale electronic-photonic systems with the potential to transform computing system architectures, enabling more powerful computers, from network infrastructure to data centres and supercomputers.

Flexible carbon micro-supercapacitors prepared by direct cw-laser writing

NASA Astrophysics Data System (ADS)

Cai, Jinguang; Watanabe, Akira

2016-03-01

Micro-/nano-scale power supply units with high energy and high power densities are critical components for the development of compact miniaturized portable electronic devices. Supercapacitors have attracted many research attentions due to their high power density, robust cycle performance, pollution-free operation, and maintenance-free features. Besides, the properties of small size, light weight, and flexibility are also required. On-chip microsupercapacitors (MSCs) have the potential acting as power supply units in portable devices, due to their simplified packaging processes and compatibility to the integrated circuits. However, the fabrication methods and materials should be cost-effective, scalable, and compatible to current electronic industry. Carbon materials own high specific surface areas, electrochemical stability, and high electrical conductivity, which are critical parameters for high-power supercapacitors. Moreover, the high mechanical tolerance makes them good candidates for flexible wearable devices. Therefore, MSCs based on carbon materials would satisfy the requirements of portable electronics. In this work, we demonstrated the fabrication of carbon MSCs by laser direct writing on commercial polyimide sheets in Ar with lowcost semiconductor cw-laser with a wavelength of 405nm. The obtained structures are macro-nanostructures comprising graphitized and amorphous carbon with relatively smooth surfaces and low resistance, in compared with the structures obtained by laser writing in air. As-prepared micro-supercapacitors show a high capacitance of about 14.9 mF/cm2 at a scanning rate of 10 mV/s, which is comparable to the reported highest capacitance of carbon-based supercapacitors fabricated by pulse-laser writing.

Nuclear Science Symposium, 19th, and Nuclear Power Systems Symposium, 4th, Miami, Fla., December 6-8, 1972, Proceedings.

NASA Technical Reports Server (NTRS)

1973-01-01

Major topics covered include radiation monitoring instrumentation, nuclear circuits and systems, biomedical applications of nuclear radiation in diagnosis and therapy, plasma research for fusion power, reactor control and instrumentation, nuclear power standards, and applications of digital computers in nuclear power plants. Systems and devices for space applications are described, including the Apollo alpha spectrometer, a position sensitive detection system for UV and X-ray photons, a 4500-volt electron multiplier bias supply for satellite use, spark chamber systems, proportional counters, and other devices. Individual items are announced in this issue.

"Juice Monsters": Sub-Ohm Vaping and Toxic Volatile Aldehyde Emissions.

PubMed

Talih, Soha; Salman, Rola; Karaoghlanian, Nareg; El-Hellani, Ahmad; Saliba, Najat; Eissenberg, Thomas; Shihadeh, Alan

2017-10-16

An emerging category of electronic cigarettes (ECIGs) is sub-Ohm devices (SODs) that operate at ten or more times the power of conventional ECIGs. Because carcinogenic volatile aldehyde (VA) emissions increase sharply with power, SODs may expose users to greater VAs. In this study, we compared VA emissions from several SODs and found that across device, VAs and power were uncorrelated unless power was normalized by coil surface area. VA emissions and liquid consumed were correlated highly. Analyzed in light of EU regulations limiting ECIG liquid nicotine concentration, these findings suggest potential regulatory levers and pitfalls for protecting public health.

Combined experimental and numerical investigation of energy harness utilizing vortex induced vibration over half cylinder using piezoelectric beams

NASA Astrophysics Data System (ADS)

Ahmed, Md. Tusher; Hossain, Md. Tanver; Rahman, Md. Ashiqur

2017-06-01

Energy harvesting technology has the ability to create self-powered electronic systems that do not rely on battery power for their operation. Wind energy can be converted into electricity via a piezoelectric transducer during the air flow over a cylinder. The vortex-induced vibration over the cylinder causes the piezoelectric beam to vibrate. Thus useful electric energy at the range 0.2-0.3V is found which can be useful for self-powering small electronic devices. In the present study, prototypes of micro-energy harvester with a shape of 65 mm × 37 mm × 0.4 mm are developed and tested for airflow over D-shaped bluff body for diameters of 15, 20 and 28mm in an experimental setup consisting of a long wind tunnel of 57cm × 57cm with variable speeds of the motor for different flow velocities and the experimental setup is connected at the downstream where flow velocity is the maximum. Experimental results show that the velocity and induced voltage follows a regular linear pattern. A maximum electrical potential of 140 mV for velocity of 1.1 ms-1 at a bluff body diameter of 15 mm is observed in the energy harvester that can be applied in many practical cases for self-powering electronic devices. The simulation of this energy harvesting phenomena is then simulated using COMSOLE multi-physics. Diameter of the bluff bodies as well as flow velocity and size of cantilever beam are varied and the experimental findings are found to be in good agreement with the simulated ones. The simulations along with the experimental data show the possibility of generating electricity from vortex induced vibration and can be applied in many practical cases for self-powering electronic devices.

Cooled electrical terminal assembly and device incorporating same

DOEpatents

Beihoff, Bruce C.; Radosevich, Lawrence D.; Phillips, Mark G.; Kehl, Dennis L.; Kaishian, Steven C.; Kannenberg, Daniel G.

2006-08-22

A terminal structure provides interfacing with power electronics circuitry and external circuitry. The thermal support may receive one or more power electronic circuits. The support may aid in removing heat from the terminal structure and the circuits through fluid circulating through the support. The support may form a shield from both external EMI/RFI and from interference generated by operation of the power electronic circuits. Features may be provided to permit and enhance connection of the circuitry to external circuitry, such as improved terminal configurations. Modular units may be assembled that may be coupled to electronic circuitry via plug-in arrangements or through interface with a backplane or similar mounting and interconnecting structures.

Cooled electrical terminal assembly and device incorporating same

DOEpatents

Beihoff, Bruce C.; Radosevich, Lawrence D.; Phillips, Mark G.; Kehl, Dennis L.; Kaishian, Steven C.; Kannenberg, Daniel G.

2005-05-24

A terminal structure provides interfacing with power electronics circuitry and external circuitry. The thermal support may receive one or more power electronic circuits. The support may aid in removing heat from the terminal structure and the circuits through fluid circulating through the support. The support may form a shield from both external EMI/RFI and from interference generated by operation of the power electronic circuits. Features may be provided to permit and enhance connection of the circuitry to external circuitry, such as improved terminal configurations. Modular units may be assembled that may be coupled to electronic circuitry via plug-in arrangements or through interface with a backplane or similar mounting and interconnecting structures.

Piezoelectric-Induced Triboelectric Hybrid Nanogenerators Based on the ZnO Nanowire Layer Decorated on the Au/polydimethylsiloxane-Al Structure for Enhanced Triboelectric Performance.

PubMed

Jirayupat, Chaiyanut; Wongwiriyapan, Winadda; Kasamechonchung, Panita; Wutikhun, Tuksadon; Tantisantisom, Kittipong; Rayanasukha, Yossawat; Jiemsakul, Thanakorn; Tansarawiput, Chookiat; Liangruksa, Monrudee; Khanchaitit, Paisan; Horprathum, Mati; Porntheeraphat, Supanit; Klamchuen, Annop

2018-02-21

Here, we demonstrate a novel device structure design to enhance the electrical conversion output of a triboelectric device through the piezoelectric effect called as the piezo-induced triboelectric (PIT) device. By utilizing the piezopotential of ZnO nanowires embedded into the polydimethylsiloxane (PDMS) layer attached on the top electrode of the conventional triboelectric device (Au/PDMS-Al), the PIT device exhibits an output power density of 50 μW/cm 2 , which is larger than that of the conventional triboelectric device by up to 100 folds under the external applied force of 8.5 N. We found that the effect of the external piezopotential on the top Au electrode of the triboelectric device not only enhances the electron transfer from the Al electrode to PDMS but also boosts the internal built-in potential of the triboelectric device through an external electric field of the piezoelectric layer. Furthermore, 100 light-emitting diodes (LEDs) could be lighted up via the PIT device, whereas the conventional device could illuminate less than 20 LED bulbs. Thus, our results highlight that the enhancement of the triboelectric output can be achieved by using a PIT device structure, which enables us to develop hybrid nanogenerators for various self-power electronics such as wearable and mobile devices.

Power Electronics Thermal Management R&D (Presentation)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waye, S.

2014-11-01

This project will investigate and develop thermal-management strategies for wide bandgap (WBG)-based power electronics systems. Research will be carried out to deal with thermal aspects at the module- and system-level. Module-level research will focus on die- and substrate-integrated cooling strategies and heat-transfer enhancement technologies. System-level research will focus on thermal-management strategies for the entire power electronics system to enable smart packaging solutions. One challenge with WBG device-based power electronics is that although losses in the form of heat may be lower, the footprint of the components is also likely to be reduced to reduce cost, weight, and volume. Combined withmore » higher operational temperatures, this creates higher heat fluxes which much be removed from a smaller footprint, requiring advanced cooling strategies.« less

Development of silicon carbide semiconductor devices for high temperature applications

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.; Powell, J. Anthony; Petit, Jeremy B.

1991-01-01

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Electronic Nose

NASA Technical Reports Server (NTRS)

1982-01-01

Grace Industries, Inc.'s Electronic Nose is a vapor and gas detector, deriving from NASA's electronic circuitry, capable for sensing the presence of accelerants several days after a fire. The device is powered by rechargeable battery and no special training needed to operate. If an accelerant is present, device will emit a beeping sound and trigger a flashing light; the faster the beep rate, the more volatile the accelerant. Its sensitivity can also detect minute traces of accelerants. Unit saves investigators of fire causes time and expense by providing speedy detection of physical evidence for use in court. Device is also useful for detecting hazardous fumes, locating and detecting gas leaks in refineries and on oil drilling rigs.

Microfluidic stretchable RF electronics.

PubMed

Cheng, Shi; Wu, Zhigang

2010-12-07

Stretchable electronics is a revolutionary technology that will potentially create a world of radically different electronic devices and systems that open up an entirely new spectrum of possibilities. This article proposes a microfluidic based solution for stretchable radio frequency (RF) electronics, using hybrid integration of active circuits assembled on flex foils and liquid alloy passive structures embedded in elastic substrates, e.g. polydimethylsiloxane (PDMS). This concept was employed to implement a 900 MHz stretchable RF radiation sensor, consisting of a large area elastic antenna and a cluster of conventional rigid components for RF power detection. The integrated radiation sensor except the power supply was fully embedded in a thin elastomeric substrate. Good electrical performance of the standalone stretchable antenna as well as the RF power detection sub-module was verified by experiments. The sensor successfully detected the RF radiation over 5 m distance in the system demonstration. Experiments on two-dimensional (2D) stretching up to 15%, folding and twisting of the demonstrated sensor were also carried out. Despite the integrated device was severely deformed, no failure in RF radiation sensing was observed in the tests. This technique illuminates a promising route of realizing stretchable and foldable large area integrated RF electronics that are of great interest to a variety of applications like wearable computing, health monitoring, medical diagnostics, and curvilinear electronics.

Optimization of power and energy densities in supercapacitors

NASA Astrophysics Data System (ADS)

Robinson, David B.

Supercapacitors use nanoporous electrodes to store large amounts of charge on their high surface areas, and use the ions in electrolytes to carry charge into the pores. Their high power density makes them a potentially useful complement to batteries. However, ion transport through long, narrow channels still limits power and efficiency in these devices. Proper design can mitigate this. Current collector geometry must also be considered once this is done. Here, De Levie's model for porous electrodes is applied to quantitatively predict device performance and to propose optimal device designs for given specifications. Effects unique to nanoscale pores are considered, including that pores may not have enough salt to fully charge. Supercapacitors are of value for electric vehicles, portable electronics, and power conditioning in electrical grids with distributed renewable sources, and that value will increase as new device fabrication methods are developed and proper design accommodates those improvements. Example design outlines for vehicle applications are proposed and compared.

The use of lithium batteries in biomedical devices

NASA Astrophysics Data System (ADS)

Owens, Boone B.

1989-06-01

Lithium batteries have played an important role in the development of useful implantable biomedical devices. The cardiac pacemaker is the most well known of these devices and high energy, long-life reliable lithium primary cells have effectively replaced all of the alkaline cells previously used in these electronic systems. The recent development of higher power devices such as drug pumps and cardiac defibrillators require the use of batteries with higher energy and power capabilities. High rate rechargeable batteries that can be configured as flat prismatic cells would be especially useful in some of these new applications. Lithium polymer electrolyte batteries may find a useful role in these new areas.

Performance and Reliability of Bonded Interfaces for High-Temperature Packaging. Annual Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeVoto, Douglas

2016-04-01

Current generation automotive power electronics packages utilize silicon devices and lead-free solder alloys. To meet stringent technical targets for 2020 and beyond (for cost, power density, specific power, efficiency and reliability), wide-bandgap devices are being considered since they offer advantages such as operation at higher frequencies, voltages, and temperatures. Traditional power electronics packages must be redesigned to utilize the full potential of wide-bandgap devices, and the die- and substrate-attach layers are key areas where new material development and validation is required. Present solder alloys do not meet the performance requirements for these new package designs while also meeting cost andmore » hazardous substance restrictions. Sintered silver (Ag) promises to meet the needs for die- and substrate-attach interfaces but synthesis optimization and reliability evaluation must be completed. Sintered Ag material was proposed as an alternative solution in power electronics packages almost 20 years back. However, synthesis pressure requirements up 40 MPa caused a higher complexity in the production process and more stringent flatness specifications for the substrates. Recently, several manufacturers have developed sintered Ag materials that require lower (3-5 MPa) or even no bonding pressures. Degradation mechanisms for these sintered Ag materials are not well known and need to be addressed. We are addressing these aspects to some extent in this project. We are developing generalized (i.e., independent of geometry) stress intensity factor versus cycles-to-failure relations for sintered Ag. Because sintered Ag is a relatively new material for automotive power electronics, the industry currently does not have a good understanding of recommended synthesis parameters or expected reliability under prescribed conditions. It is an important deliverable of this project to transfer findings to industry to eliminate barriers to using sintered Ag as a viable and commercialized die- and substrate-attach material. Only a few manufacturers produce sintered Ag pastes and may consider some processing conditions as proprietary. It is the goal of this project to openly explore and define best practices in order to impact the maximum number of power electronics module manufacturers and suppliers.« less

Evaluation of Anisotropic Biaxial Stress Induced Around Trench Gate of Si Power Transistor Using Water-Immersion Raman Spectroscopy

NASA Astrophysics Data System (ADS)

Suzuki, Takahiro; Yokogawa, Ryo; Oasa, Kohei; Nishiwaki, Tatsuya; Hamamoto, Takeshi; Ogura, Atsushi

2018-05-01

The trench gate structure is one of the promising techniques to reduce on-state resistance (R on) for silicon power devices, such as insulated gate bipolar transistors and power metal-oxide-semiconductor field-effect transistors. In addition, it has been reported that stress is induced around the trench gate area, modifying the carrier mobilities. We evaluated the one-dimensional distribution and anisotropic biaxial stress by quasi-line excitation and water-immersion Raman spectroscopy, respectively. The results clearly confirmed anisotropic biaxial stress in state-of-the-art silicon power devices. It is theoretically possible to estimate carrier mobility using piezoresistance coefficients and anisotropic biaxial stress. The electron mobility was increased while the hole mobility was decreased or remained almost unchanged in the silicon (Si) power device. The stress significantly modifies the R on of silicon power transistors. Therefore, their performance can be improved using the stress around the trench gate.

Hybrid nanogenerator for concurrently harvesting biomechanical and biochemical energy.

PubMed

Hansen, Benjamin J; Liu, Ying; Yang, Rusen; Wang, Zhong Lin

2010-07-27

Harvesting energy from multiple sources available in our personal and daily environments is highly desirable, not only for powering personal electronics, but also for future implantable sensor-transmitter devices for biomedical and healthcare applications. Here we present a hybrid energy scavenging device for potential in vivo applications. The hybrid device consists of a piezoelectric poly(vinylidene fluoride) nanofiber nanogenerator for harvesting mechanical energy, such as from breathing or from the beat of a heart, and a flexible enzymatic biofuel cell for harvesting the biochemical (glucose/O2) energy in biofluid, which are two types of energy available in vivo. The two energy harvesting approaches can work simultaneously or individually, thereby boosting output and lifetime. Using the hybrid device, we demonstrate a "self-powered" nanosystem by powering a ZnO nanowire UV light sensor.

The power of glove: Soft microbial fuel cell for low-power electronics

NASA Astrophysics Data System (ADS)

Winfield, Jonathan; Chambers, Lily D.; Stinchcombe, Andrew; Rossiter, Jonathan; Ieropoulos, Ioannis

2014-03-01

A novel, soft microbial fuel cell (MFC) has been constructed using the finger-piece of a standard laboratory natural rubber latex glove. The natural rubber serves as structural and proton exchange material whilst untreated carbon veil is used for the anode. A soft, conductive, synthetic latex cathode is developed that coats the outside of the glove. This inexpensive, lightweight reactor can without any external power supply, start up and energise a power management system (PMS), which steps-up the MFC output (0.06-0.17 V) to practical levels for operating electronic devices (>3 V). The MFC is able to operate for up to 4 days on just 2 mL of feedstock (synthetic tryptone yeast extract) without any cathode hydration. The MFC responds immediately to changes in fuel-type when the introduction of urine accelerates the cycling times (35 vs. 50 min for charge/discharge) of the MFC and PMS. Following starvation periods of up to 60 h at 0 mV the MFC is able to cold start the PMS simply with the addition of 2 mL fresh feedstock. These findings demonstrate that cheap MFCs can be developed as sole power sources and in conjunction with advancements in ultra-low power electronics, can practically operate small electrical devices.

High-efficiency robust perovskite solar cells on ultrathin flexible substrates

PubMed Central

Li, Yaowen; Meng, Lei; Yang, Yang (Michael); Xu, Guiying; Hong, Ziruo; Chen, Qi; You, Jingbi; Li, Gang; Yang, Yang; Li, Yongfang

2016-01-01

Wide applications of personal consumer electronics have triggered tremendous need for portable power sources featuring light-weight and mechanical flexibility. Perovskite solar cells offer a compelling combination of low-cost and high device performance. Here we demonstrate high-performance planar heterojunction perovskite solar cells constructed on highly flexible and ultrathin silver-mesh/conducting polymer substrates. The device performance is comparable to that of their counterparts on rigid glass/indium tin oxide substrates, reaching a power conversion efficiency of 14.0%, while the specific power (the ratio of power to device weight) reaches 1.96 kW kg−1, given the fact that the device is constructed on a 57-μm-thick polyethylene terephthalate based substrate. The flexible device also demonstrates excellent robustness against mechanical deformation, retaining >95% of its original efficiency after 5,000 times fully bending. Our results confirmed that perovskite thin films are fully compatible with our flexible substrates, and are thus promising for future applications in flexible and bendable solar cells. PMID:26750664

Multi-junction Thin-film Solar Cells on Flexible Substrates for Space Power

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Smith, Mark; Scofield, John H.; Dickman, John E.; Lush, Gregory B.; Morel, Donald L.; Ferekides, Christos; Dhere, Neelkanth G.

2002-01-01

The ultimate objective of the thin-film program at NASA GRC is development of a 20 percent AM0 thin-film device technology with high power/weight ratio. Several approaches are outlined to improve overall device efficiency and power/weight ratio. One approach involves the use of very lightweight flexible substrates such as polyimides (i.e., Kapton(Trademark)) or metal foil. Also, a compound semiconductor tandem device structure that can meet this objective is proposed and simulated using Analysis of Microelectronic and Photonic Structures (AMPS). AMPS modeling of current devices in tandem format indicate that AM0 efficiencies near 20 percent can be achieved. And with improvements in materials, efficiencies approaching 25 percent are achievable. Several important technical issues need to be resolved to realize these complex devices: development of a wide bandgap material with good electronic properties, development of transparent contacts, and targeting a 2-terminal device structure (with more complicated processing and tunnel junction) or 4-terminal device. Recent progress in the NASA GRC program is outlined.

High-temperature electronics

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.; Seng, Gary T.

1990-01-01

To meet the needs of the aerospace propulsion and space power communities, the high temperature electronics program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. This program supports a major element of the Center's mission - to perform basic and developmental research aimed at improving aerospace propulsion systems. Research is focused on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of SiC devices.

High Power Microwave Emission of Large and Small Orbit Gyrotron Devices in Rectangular Interaction Structures

NASA Astrophysics Data System (ADS)

Hochman, J. M.; Gilgenbach, R. M.; Jaynes, R. L.; Rintamaki, J. I.; Luginsland, J. W.; Lau, Y. Y.; Spencer, T. A.

1996-11-01

Experiments utilize large and small orbit e-beam gyrotron devices in a rectangular-cross-section (RCS) gyrotron. This device is being explored to examine polarization control. Other research issues include pulse shortening, and mode competition. MELBA generates electron beams with parameters of: -800kV, 1-10kA diode current, and 0.5-1.0 μ sec pulselengths. The small orbit gyrotron device is converted to a large orbit experiment by running MELBA's annular electron beam through a magnetic cusp. Initial experiments showed an increase in beam alpha (V_perp/V_par) of a factor of ~ 4 between small and large orbit devices. Experimental results from the RCS gyrotron will be compared for large-orbit and small-orbit electron beams. Beam transport data and frequency measurements will be presented. Computer modeling utilizing the MAGIC and E-gun codes will be shown.

A Self-Powered Wearable Noninvasive Electronic-Skin for Perspiration Analysis Based on Piezo-Biosensing Unit Matrix of Enzyme/ZnO Nanoarrays.

PubMed

Han, Wuxiao; He, Haoxuan; Zhang, Linlin; Dong, Chuanyi; Zeng, Hui; Dai, Yitong; Xing, Lili; Zhang, Yan; Xue, Xinyu

2017-09-06

The emerging multifunctional flexible electronic-skin for establishing body-electric interaction can enable real-time monitoring of personal health status as a new personalized medicine technique. A key difficulty in the device design is the flexible power supply. Here a self-powered wearable noninvasive electronic-skin for perspiration analysis has been realized on the basis of a piezo-biosensing unit matrix of enzyme/ZnO nanoarrays. The electronic-skin can detect lactate, glucose, uric acid, and urea in the perspiration, and no outside electrical power supply or battery is used in the biosensing process. The piezoelectric impulse of the piezo-biosensing units serves as the power supply and the data biosensor. The working mechanism can be ascribed to the piezoelectric-enzymatic-reaction coupling effect of enzyme/ZnO nanowires. The electronic-skin can real-time/continuously monitor the physiological state of a runner through analyzing the perspiration on his skin. This approach can promote the development of a new-type of body electric and self-powered biosensing electronic-skin.

Voltage regulation and power losses reduction in a wind farm integrated MV distribution network

NASA Astrophysics Data System (ADS)

Fandi, Ghaeth; Igbinovia, Famous Omar; Tlusty, Josef; Mahmoud, Rateb

2018-01-01

A medium-voltage (MV) wind production system is proposed in this paper. The system applies a medium-voltage permanent magnet synchronous generator (PMSG) as well as MV interconnection and distribution networks. The simulation scheme of an existing commercial electric-power system (Case A) and a proposed wind farm with a gearless PMSG insulated gate bipolar transistor (IGBT) power electronics converter scheme (Case B) is compared. The analyses carried out in MATLAB/Simulink environment shows an enhanced voltage profile and reduced power losses, thus, efficiency in installed IGBT power electronics devices in the wind farm. The resulting wind energy transformation scheme is a simple and controllable medium voltage application since it is not restrained by the IGBT power electronics voltage source converter (VSC) arrangement. Active and reactive power control is made possible with the aid of the gearless PMSG IGBT power converters.

Development of a high permeability cored transintegumental power transformer.

PubMed

Helmicki, A J; Melvin, D M; Henderson, H T; Nebrigic, D; Venkat, R; Glos, D L

1996-01-01

Circulatory support devices require 10-20 W. Currently, several devices are under development for the transmission of this power via transcutaneous transformers, with the secondary implanted subcutaneously and the primary worn externally. Because these devices are air cored, they have relatively large, bulky external appliances, poor coil to coil coupling, and result in significant stray fields passing through adjacent tissues. This article reports on the engineering design of a novel, high permeability cored transformer implanted in a transenteric configuration using an isolated intestinal pouch. Such an approach offers greater energy transmission efficiency, less heat dissipation, less stray electromagnetic energy, and greatly reduced device size. Two competing designs using this concept have been developed and tested. Each consists of the transformer, together with power interface electronics, forming a direct current (DC)/DC resonant converter. Operating frequencies are 90.2 and 14.7 kHz, respectively, with primary/secondary turns ratios of 10/10 and 11/14, respectively. In addition, data interface electronics allows communication across the transformer of up to four signals at a per channel sample rate of 10 Hz. Both designs are able to continuously transmit 25 W at an output level of 12 Vdc into a 5.8 omega load. Calorimetry tests indicate DC to DC efficiencies greater than 75% and coil to coil efficiencies greater than 96%. Total package size for the implantable portion of each device (including sensor internal interface electronics) is less than 40 ml, with a weight weight of less than 100 g. The results of short-term implantation studies have been favorable. Long-term implantation studies currently are under way.

Staircase Quantum Dots Configuration in Nanowires for Optimized Thermoelectric Power

PubMed Central

Li, Lijie; Jiang, Jian-Hua

2016-01-01

The performance of thermoelectric energy harvesters can be improved by nanostructures that exploit inelastic transport processes. One prototype is the three-terminal hopping thermoelectric device where electron hopping between quantum-dots are driven by hot phonons. Such three-terminal hopping thermoelectric devices have potential in achieving high efficiency or power via inelastic transport and without relying on heavy-elements or toxic compounds. We show in this work how output power of the device can be optimized via tuning the number and energy configuration of the quantum-dots embedded in parallel nanowires. We find that the staircase energy configuration with constant energy-step can improve the power factor over a serial connection of a single pair of quantum-dots. Moreover, for a fixed energy-step, there is an optimal length for the nanowire. Similarly for a fixed number of quantum-dots there is an optimal energy-step for the output power. Our results are important for future developments of high-performance nanostructured thermoelectric devices. PMID:27550093

Scalable fabrication of high-power graphene micro-supercapacitors for flexible and on-chip energy storage

NASA Astrophysics Data System (ADS)

El-Kady, Maher F.; Kaner, Richard B.

2013-02-01

The rapid development of miniaturized electronic devices has increased the demand for compact on-chip energy storage. Microscale supercapacitors have great potential to complement or replace batteries and electrolytic capacitors in a variety of applications. However, conventional micro-fabrication techniques have proven to be cumbersome in building cost-effective micro-devices, thus limiting their widespread application. Here we demonstrate a scalable fabrication of graphene micro-supercapacitors over large areas by direct laser writing on graphite oxide films using a standard LightScribe DVD burner. More than 100 micro-supercapacitors can be produced on a single disc in 30 min or less. The devices are built on flexible substrates for flexible electronics and on-chip uses that can be integrated with MEMS or CMOS in a single chip. Remarkably, miniaturizing the devices to the microscale results in enhanced charge-storage capacity and rate capability. These micro-supercapacitors demonstrate a power density of ~200 W cm-3, which is among the highest values achieved for any supercapacitor.

Study on data compression algorithm and its implementation in portable electronic device for Internet of Things applications

NASA Astrophysics Data System (ADS)

Asilah Khairi, Nor; Bahari Jambek, Asral

2017-11-01

An Internet of Things (IoT) device is usually powered by a small battery, which does not last long. As a result, saving energy in IoT devices has become an important issue when it comes to this subject. Since power consumption is the primary cause of radio communication, some researchers have proposed several compression algorithms with the purpose of overcoming this particular problem. Several data compression algorithms from previous reference papers are discussed in this paper. The description of the compression algorithm in the reference papers was collected and summarized in a table form. From the analysis, MAS compression algorithm was selected as a project prototype due to its high potential for meeting the project requirements. Besides that, it also produced better performance regarding energy-saving, better memory usage, and data transmission efficiency. This method is also suitable to be implemented in WSN. MAS compression algorithm will be prototyped and applied in portable electronic devices for Internet of Things applications.

Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device.

PubMed

Park, Sangsu; Noh, Jinwoo; Choo, Myung-Lae; Sheri, Ahmad Muqeem; Chang, Man; Kim, Young-Bae; Kim, Chang Jung; Jeon, Moongu; Lee, Byung-Geun; Lee, Byoung Hun; Hwang, Hyunsang

2013-09-27

Efforts to develop scalable learning algorithms for implementation of networks of spiking neurons in silicon have been hindered by the considerable footprints of learning circuits, which grow as the number of synapses increases. Recent developments in nanotechnologies provide an extremely compact device with low-power consumption.In particular, nanoscale resistive switching devices (resistive random-access memory (RRAM)) are regarded as a promising solution for implementation of biological synapses due to their nanoscale dimensions, capacity to store multiple bits and the low energy required to operate distinct states. In this paper, we report the fabrication, modeling and implementation of nanoscale RRAM with multi-level storage capability for an electronic synapse device. In addition, we first experimentally demonstrate the learning capabilities and predictable performance by a neuromorphic circuit composed of a nanoscale 1 kbit RRAM cross-point array of synapses and complementary metal-oxide-semiconductor neuron circuits. These developments open up possibilities for the development of ubiquitous ultra-dense, ultra-low-power cognitive computers.

Validation of a Portable Low-Power Deep Brain Stimulation Device Through Anxiolytic Effects in a Laboratory Rat Model.

PubMed

Kouzani, Abbas Z; Kale, Rajas P; Zarate-Garza, Pablo Patricio; Berk, Michael; Walder, Ken; Tye, Susannah J

2017-09-01

Deep brain stimulation (DBS) devices deliver electrical pulses to neural tissue through an electrode. To study the mechanisms and therapeutic benefits of deep brain stimulation, murine preclinical research is necessary. However, conducting naturalistic long-term, uninterrupted animal behavioral experiments can be difficult with bench-top systems. The reduction of size, weight, power consumption, and cost of DBS devices can assist the progress of this research in animal studies. A low power, low weight, miniature DBS device is presented in this paper. This device consists of electronic hardware and software components including a low-power microcontroller, an adjustable current source, an n-channel metal-oxide-semiconductor field-effect transistor, a coin-cell battery, electrode wires and a software program to operate the device. Evaluation of the performance of the device in terms of battery lifetime and device functionality through bench and in vivo tests was conducted. The bench test revealed that this device can deliver continuous stimulation current pulses of strength [Formula: see text], width [Formula: see text], and frequency 130 Hz for over 22 days. The in vivo tests demonstrated that chronic stimulation of the nucleus accumbens (NAc) with this device significantly increased psychomotor activity, together with a dramatic reduction in anxiety-like behavior in the elevated zero-maze test.

Concept Developed for an Implanted Stimulated Muscle-Powered Piezoelectric Generator

NASA Technical Reports Server (NTRS)

Lewandowski, Beth; Kilgore, Kevin; Ercegovic, David; Gustafson, Kenneth

2005-01-01

Implanted electronic devices are typically powered by batteries or transcutaneous power transmission. Batteries must be replaced or recharged, and transcutaneous power sources burden the patient or subject with external equipment prone to failure. A completely self-sustaining implanted power source would alleviate these limitations. Skeletal muscle provides an available autologous power source containing native chemical energy that produces power in excess of the requirements for muscle activation by motor nerve stimulation. A concept has been developed to convert stimulated skeletal muscle power into electrical energy (see the preceding illustration). We propose to connect a piezoelectric generator between a muscle tendon and bone. Electrically stimulated muscle contractions would exert force on the piezoelectric generator, charging a storage circuit that would be used to power the stimulator and other devices.

Thermoelectric fabrics: toward power generating clothing.

PubMed

Du, Yong; Cai, Kefeng; Chen, Song; Wang, Hongxia; Shen, Shirley Z; Donelson, Richard; Lin, Tong

2015-03-23

Herein, we demonstrate that a flexible, air-permeable, thermoelectric (TE) power generator can be prepared by applying a TE polymer (e.g. poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate)) coated commercial fabric and subsequently by linking the coated strips with a conductive connection (e.g. using fine metal wires). The poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) coated fabric shows very stable TE properties from 300 K to 390 K. The fabric device can generate a TE voltage output (V) of 4.3 mV at a temperature difference (ΔT) of 75.2 K. The potential for using fabric TE devices to harvest body temperature energy has been discussed. Fabric-based TE devices may be useful for the development of new power generating clothing and self-powered wearable electronics.

Electron-Tunneling Magnetometer

NASA Technical Reports Server (NTRS)

Kaiser, William J.; Kenny, Thomas W.; Waltman, Steven B.

1993-01-01

Electron-tunneling magnetometer is conceptual solid-state device operating at room temperature, yet offers sensitivity comparable to state-of-art magnetometers such as flux gates, search coils, and optically pumped magnetometers, with greatly reduced volume, power consumption, electronics requirements, and manufacturing cost. Micromachined from silicon wafer, and uses tunneling displacement transducer to detect magnetic forces on cantilever-supported current loop.

Over-voltage protection system and method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chi, Song; Dong, Dong; Lai, Rixin

An over-voltage protection system includes an electronic valve connected across two terminals of a circuit and an over-voltage detection circuit connected across one of the plurality of semiconductor devices for detecting an over-voltage across the circuit. The electronic valve includes a plurality of semiconductor devices connected in series. The over-voltage detection circuit includes a voltage divider circuit connected to a break-over diode in a way to provide a representative low voltage to the break-over diode and an optocoupler configured to receive a current from the break-over diode when the representative low voltage exceeds a threshold voltage of the break-over diodemore » indicating an over-voltage condition. The representative low voltage provided to the break-over diode represents a voltage across the one semiconductor device. A plurality of self-powered gate drive circuits are connected to the plurality of semiconductor devices, wherein the plurality of self-powered gate drive circuits receive over-voltage triggering pulses from the optocoupler during the over-voltage condition and switch on the plurality of semiconductor devices to bypass the circuit.« less

High Current Density Scandate Cathodes for Future Vacuum Electronics Applications

DTIC Science & Technology

2008-05-30

of Technology HFSS Ansoft Corporation’s High Frequency Structure Simulator TWT Traveling Wave Tube - device for generating high levels of RF power ...cathodes are practical for high power RF sources. Typical thermi- onic cathodes consists of a tungsten matrix impregnated with a mixture of barium oxide...electron beam with the largest possible diameter, consistent with high gain, bandwidth, and efficiency at W- Band . The research concentrated on photonic

Sustainable design of high-performance microsized microbial fuel cell with carbon nanotube anode and air cathode.

PubMed

Mink, Justine E; Hussain, Muhammad Mustafa

2013-08-27

Microbial fuel cells (MFCs) are a promising alternative energy source that both generates electricity and cleans water. Fueled by liquid wastes such as wastewater or industrial wastes, the microbial fuel cell converts waste into energy. Microsized MFCs are essentially miniature energy harvesters that can be used to power on-chip electronics, lab-on-a-chip devices, and/or sensors. As MFCs are a relatively new technology, microsized MFCs are also an important rapid testing platform for the comparison and introduction of new conditions or materials into macroscale MFCs, especially nanoscale materials that have high potential for enhanced power production. Here we report a 75 μL microsized MFC on silicon using CMOS-compatible processes and employ a novel nanomaterial with exceptional electrochemical properties, multiwalled carbon nanotubes (MWCNTs), as the on-chip anode. We used this device to compare the usage of the more commonly used but highly expensive anode material gold, as well as a more inexpensive substitute, nickel. This is the first anode material study done using the most sustainably designed microsized MFC to date, which utilizes ambient oxygen as the electron acceptor with an air cathode instead of the chemical ferricyanide and without a membrane. Ferricyanide is unsustainable, as the chemical must be continuously refilled, while using oxygen, naturally found in air, makes the device mobile and is a key step in commercializing this for portable technology such as lab-on-a-chip for point-of-care diagnostics. At 880 mA/m(2) and 19 mW/m(2) the MWCNT anode outperformed the others in both current and power densities with between 6 and 20 times better performance. All devices were run for over 15 days, indicating a stable and high-endurance energy harvester already capable of producing enough power for ultra-low-power electronics and able to consistently power them over time.

New nanocomposite surfaces and thermal interface materials based on mesoscopic microspheres, polymers and graphene flakes

NASA Astrophysics Data System (ADS)

Dmitriev, Alex A.; Dmitriev, Alex S.; Makarov, Petr; Mikhailova, Inna

2018-04-01

In recent years, there has been a great interest in the development and creation of new functional energy mate-rials, including for improving the energy efficiency of power equipment and for effectively removing heat from energy devices, microelectronics and optoelectronics (power micro electronics, supercapacitors, cooling of processors, servers and data centers). In this paper, the technology of obtaining new nanocomposites based on mesoscopic microspheres, polymers and graphene flakes is considered. The methods of sequential production of functional materials from graphene flakes of different volumetric concentration using epoxy polymers, as well as the addition of monodisperse microspheres are described. Data are given on the measurement of the contact angle and thermal conductivity of these nanocomposites with respect to the creation of thermal interface materials for cooling devices of electronics, optoelectronics and power engineering.

Nanoionics-Based Switches for Radio-Frequency Applications

NASA Technical Reports Server (NTRS)

Nessel, James; Lee, Richard

2010-01-01

Nanoionics-based devices have shown promise as alternatives to microelectromechanical systems (MEMS) and semiconductor diode devices for switching radio-frequency (RF) signals in diverse systems. Examples of systems that utilize RF switches include phase shifters for electronically steerable phased-array antennas, multiplexers, cellular telephones and other radio transceivers, and other portable electronic devices. Semiconductor diode switches can operate at low potentials (about 1 to 3 V) and high speeds (switching times of the order of nanoseconds) but are characterized by significant insertion loss, high DC power consumption, low isolation, and generation of third-order harmonics and intermodulation distortion (IMD). MEMS-based switches feature low insertion loss (of the order of 0.2 dB), low DC power consumption (picowatts), high isolation (>30 dB), and low IMD, but contain moving parts, are not highly reliable, and must be operated at high actuation potentials (20 to 60 V) generated and applied by use of complex circuitry. In addition, fabrication of MEMS is complex, involving many processing steps. Nanoionics-based switches offer the superior RF performance and low power consumption of MEMS switches, without need for the high potentials and complex circuitry necessary for operation of MEMS switches. At the same time, nanoionics-based switches offer the high switching speed of semiconductor devices. Also, like semiconductor devices, nanoionics-based switches can be fabricated relatively inexpensively by use of conventional integrated-circuit fabrication techniques. More over, nanoionics-based switches have simple planar structures that can easily be integrated into RF power-distribution circuits.

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

NASA Technical Reports Server (NTRS)

1996-01-01

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Direct cooled power electronics substrate

DOEpatents

Wiles, Randy H [Powell, TN; Wereszczak, Andrew A [Oak Ridge, TN; Ayers, Curtis W [Kingston, TN; Lowe, Kirk T [Knoxville, TN

2010-09-14

The disclosure describes directly cooling a three-dimensional, direct metallization (DM) layer in a power electronics device. To enable sufficient cooling, coolant flow channels are formed within the ceramic substrate. The direct metallization layer (typically copper) may be bonded to the ceramic substrate, and semiconductor chips (such as IGBT and diodes) may be soldered or sintered onto the direct metallization layer to form a power electronics module. Multiple modules may be attached to cooling headers that provide in-flow and out-flow of coolant through the channels in the ceramic substrate. The modules and cooling header assembly are preferably sized to fit inside the core of a toroidal shaped capacitor.

Bidirectional peripheral nerve interface and applications.

PubMed

Thakor, Nitish V; Qihong Wang; Greenwald, Elliot

2016-08-01

Peripheral nerves, due to their small size and complex innervation to organs and complex physiology, pose particularly significant challenges towards interfacing electrodes and electronics to enable neuromodulation. Here, we present a review of the technology for building such interface, including recording and stimulating electrodes and low power electronics, as well as powering. Of particular advantage to building a miniature implanted device is a "bidirectional" system that both senses from the nerves or surrogate organs and stimulates the nerves to affect the organ function. This review and presentation will cover a range of electrodes, electronics, wireless power and data schemes and system integration, and will end with some examples and applications.

The TELEC - A plasma type of direct energy converter. [Thermo-Electronic Laser Energy Converter for electric power generation

NASA Technical Reports Server (NTRS)

Britt, E. J.

1978-01-01

The Thermo-Electronic Laser Energy Converter (TELEC) is a high-power density plasma device designed to convert a 10.6-micron CO2 laser beam into electric power. Electromagnetic radiation is absorbed in plasma electrons, creating a high-electron temperature. Energetic electrons diffuse from the plasma and strike two electrodes having different areas. The larger electrode collects more electrons and there is a net transport of current. An electromagnetic field is generated in the external circuit. A computer program has been designed to analyze TELEC performance allowing parametric variation for optimization. Values are presented for TELEC performance as a function of cesium pressure and for current density and efficiency as a function of output voltage. Efficiency is shown to increase with pressure, reaching a maximum over 45%.

Self-Powered Human-Interactive Transparent Nanopaper Systems.

PubMed

Zhong, Junwen; Zhu, Hongli; Zhong, Qize; Dai, Jiaqi; Li, Wenbo; Jang, Soo-Hwan; Yao, Yonggang; Henderson, Doug; Hu, Qiyi; Hu, Liangbing; Zhou, Jun

2015-07-28

Self-powered human-interactive but invisible electronics have many applications in anti-theft and anti-fake systems for human society. In this work, for the first time, we demonstrate a transparent paper-based, self-powered, and human-interactive flexible system. The system is based on an electrostatic induction mechanism with no extra power system appended. The self-powered, transparent paper device can be used for a transparent paper-based art anti-theft system in museums or for a smart mapping anti-fake system in precious packaging and documents, by virtue of the advantages of adding/removing freely, having no impairment on the appearance of the protected objects, and being easily mass manufactured. This initial study bridges the transparent nanopaper with a self-powered and human-interactive electronic system, paving the way for the development of smart transparent paper electronics.

Radio-frequency flexible and stretchable electronics: the need, challenges and opportunities

NASA Astrophysics Data System (ADS)

Jung, Yei Hwan; Seo, Jung-Hun; Zhang, Huilong; Lee, Juhwan; Cho, Sang June; Chang, Tzu-Hsuan; Ma, Zhenqiang

2017-05-01

Successful integration of ultrathin flexible or stretchable systems with new applications, such as medical devices and biodegradable electronics, have intrigued many researchers and industries around the globe to seek materials and processes to create high-performance, non-invasive and cost-effective electronics to match those of state-of-the-art devices. Nevertheless, the crucial concept of transmitting data or power wirelessly for such unconventional devices has been difficult to realize due to limitations of radio-frequency (RF) electronics in individual components that form a wireless circuitry, such as antenna, transmission line, active devices, passive devices etc. To overcome such challenges, these components must be developed in a step-by-step manner, as each component faces a number of different challenges in ultrathin formats. Here, we report on materials and design considerations for fabricating flexible and stretchable electronics systems that operate in the microwave level. High-speed flexible active devices, including cost effective Si-based strained MOSFETs, GaAs-based HBTs and GaN-based HEMTs, performing at multi-gigahertz frequencies are presented. Furthermore, flexible or stretchable passive devices, including capacitors, inductors and transmission lines that are vital parts of a microwave circuitry are also demonstrated. We also present unique applications using the presented flexible or stretchable RF components, including wearable RF electronics and biodegradable RF electronics, which were impossible to achieve using conventional rigid, wafer-based technology. Further opportunities like implantable systems exist utilizing such ultrathin RF components, which are discussed in this report as well.

Antenna-Coupled Superconducting Tunnel Junctions with Single-Electron Transistor Readout for Detection of Sub-mm Radiation

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Wollack, E. J.; Schoelkopf, R. J.; Teufel, J.; Krebs, Carolyn (Technical Monitor)

2002-01-01

Antenna-coupled superconducting tunnel junction detectors have the potential for photon-counting sensitivity at sub-mm wavelengths. The device consists of an antenna structure to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure currents through tunnel junction contacts to the absorber volume. We will describe optimization of device parameters, and recent results on fabrication techniques for producing devices with high yield for detector arrays. We will also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

Microwave Plasma Based Single-Step Method for Generation of Carbon Nanostructures

DTIC Science & Technology

2013-07-01

Técnico, Technical University of Lisbon, Portugal 2 Mechanical and Aerospace Engeneering , Naval Postgraduate School, Monterey, CA 93943, U.S.A...Plasma environments constitute powerful tools in materials science due to their operation as thermal and chemical reactors. A microwave, atmospheric...applications include electronic devices, transparent conductive films, mechanical devices, chemical sensors, spintronic devices. Moreover, it shows enormous

Self-powered integrated systems-on-chip (energy chip)

NASA Astrophysics Data System (ADS)

Hussain, M. M.; Fahad, H.; Rojas, J.; Hasan, M.; Talukdar, A.; Oommen, J.; Mink, J.

2010-04-01

In today's world, consumer driven technology wants more portable electronic gadgets to be developed, and the next big thing in line is self-powered handheld devices. Therefore to reduce the power consumption as well as to supply sufficient power to run those devices, several critical technical challenges need to be overcome: a. Nanofabrication of macro/micro systems which incorporates the direct benefit of light weight (thus portability), low power consumption, faster response, higher sensitivity and batch production (low cost). b. Integration of advanced nano-materials to meet the performance/cost benefit trend. Nano-materials may offer new functionalities that were previously underutilized in the macro/micro dimension. c. Energy efficiency to reduce power consumption and to supply enough power to meet that low power demand. We present a pragmatic perspective on a self-powered integrated System on Chip (SoC). We envision the integrated device will have two objectives: low power consumption/dissipation and on-chip power generation for implementation into handheld or remote technologies for defense, space, harsh environments and medical applications. This paper provides insight on materials choices, intelligent circuit design, and CMOS compatible integration.

An Instantaneous Low-Cost Point-of-Care Anemia Detection Device

PubMed Central

Punter-Villagrasa, Jaime; Cid, Joan; Páez-Avilés, Cristina; Rodríguez-Villarreal, Ivón; Juanola-Feliu, Esteve; Colomer-Farrarons, Jordi; Miribel-Català, Pere Ll.

2015-01-01

We present a small, compact and portable device for point-of-care instantaneous early detection of anemia. The method used is based on direct hematocrit measurement from whole blood samples by means of impedance analysis. This device consists of a custom electronic instrumentation and a plug-and-play disposable sensor. The designed electronics rely on straightforward standards for low power consumption, resulting in a robust and low consumption device making it completely mobile with a long battery life. Another approach could be powering the system based on other solutions like indoor solar cells, or applying energy-harvesting solutions in order to remove the batteries. The sensing system is based on a disposable low-cost label-free three gold electrode commercial sensor for 50 μL blood samples. The device capability for anemia detection has been validated through 24 blood samples, obtained from four hospitalized patients at Hospital Clínic. As a result, the response, effectiveness and robustness of the portable point-of-care device to detect anemia has been proved with an accuracy error of 2.83% and a mean coefficient of variation of 2.57% without any particular case above 5%. PMID:25690552

Novel Low-Cost, Low-Power Miniature Thermionic Cathode Developed for Microwave/Millimeter Wave Tube and Cathode Ray Tube Applications

NASA Technical Reports Server (NTRS)

Wintucky, Edwin G.

1999-01-01

A low cost, small size and mass, low heater power, durable high-performance barium dispenser thermionic cathode has been developed that offers significant advancements in the design, manufacture, and performance of the electron sources used in vacuum electronic devices--such as microwave (and millimeter wave) traveling-wave tubes (TWT's)--and in display devices such as high-brightness, high-resolution cathode ray tubes (CRT's). The lower cathode heater power and the reduced size and mass of the new cathode are expected to be especially beneficial in TWT's for deep space communications, where future missions are requiring smaller spacecraft, higher data transfer rates (higher frequencies and radiofrequency output power), and greater electrical efficiency. Also expected to benefit are TWT's for commercial and government communication satellites, for both low and geosynchronous Earth orbit, with additional benefits offered by lower cost and potentially higher cathode current loading. A particularly important TWT application is in the microwave power module (MPM), which is a hybrid microwave (or millimeter wave) amplifier consisting of a low-noise solid state driver, a vacuum power booster (small TWT), and an electronic power conditioner integrated into a single compact package. The attributes of compactness and potentially high electrical efficiency make the MPM very attractive for many commercial and government (civilian and defense) applications in communication and radar systems. The MPM is already finding application in defense electronic systems and is under development by NASA for deep space communications. However, for the MPM to become competitive and commercially successful, a major reduction in cost must be achieved.

Cumulative Interference to Aircraft Radios from Multiple Portable Electronic Devices

NASA Technical Reports Server (NTRS)

Nguyen, Truong X.

2005-01-01

Cumulative interference effects from portable electronic devices (PEDs) located inside a passenger cabin are conservatively estimated for aircraft radio receivers. PEDs' emission powers in an aircraft radio frequency band are first scaled according to their locations' interference path loss (IPL) values, and the results are summed to determine the total interference power. The multiple-equipment-factor (MEF) is determined by normalizing the result against the worst case contribution from a single device. Conservative assumptions were made and MEF calculations were performed for Boeing 737's Localizer, Glide-slope, Traffic Collision Avoidance System, and Very High Frequency Communication radio systems where full-aircraft IPL data were available. The results show MEF for the systems to vary between 10 and 14 dB. The same process was also used on the more popular window/door IPL data, and the comparison show the multiple-equipment-factor results came within one decibel (dB) of each other.

Betavoltaic device in por-SiC/Si C-Nuclear Energy Converter

NASA Astrophysics Data System (ADS)

Akimchenko, Alina; Chepurnov, Victor; Dolgopolov, Mikhail; Gurskaya, Albina; Kuznetsov, Oleg; Mashnin, Alikhan; Radenko, Vitaliy; Radenko, Alexander; Surnin, Oleg; Zanin, George

2017-10-01

The miniature and low-power devices with long service life in hard operating conditions like the Carbon-14 beta-decay energy converters indeed as eternal resource for integrated MEMS and NEMS are considered. Authors discuss how to create the power supply for MEMS/NEMS devices, based on porous SiC/Si structure, which are tested to be used as the beta-decay energy converters of radioactive C-14 into electrical energy. This is based on the silicon carbide obtaining by self-organizing mono 3C-SiC endotaxy on the Si substrate. The new idea is the C-14 atoms including in molecules in the silicon carbide porous structure by this technology, which will increase the efficiency of the converter due to the greater intensity of electron-hole pairs generation rate in the space charge region. The synthesis of C-14 can be also performed by using the electronically controlled magneto-optic chamber.

Recent Progress in Micro-Supercapacitors with In-Plane Interdigital Electrode Architecture.

PubMed

Liu, Nishuang; Gao, Yihua

2017-12-01

Due to the boom of miniaturized electronic devices in the last decade, there are great demands for ultrathin and flexible on-chip rechargeable energy storage microdevices. Supercapacitor, as one of the most hopeful appearing energy storage devices, can provide a wonderful alternative to batteries or electrolytic capacitors, owing to its fast charge and discharge rates, high power density, and long cycling stability. Especially for the recently developed micro-supercapacitors, the unique in-plane interdigital electrode architecture can fully meet the integration requirements of rapidly developed miniaturized electronic devices, and improve the power density of the unit via shortening the ionic diffusion distance between the interdigital electrodes. This concept introduces the recent advances on the design, fabrication, and application of planar micro-supercapacitors for on-chip energy storage from an overall perspective. Moreover, challenges and future development trends are discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Interference with the operation of medical devices resulting from the use of radio frequency identification technology.

PubMed

Houliston, Bryan; Parry, David; Webster, Craig S; Merry, Alan F

2009-06-19

To replicate electromagnetic interference (EMI) with a common drug infusion device resulting from the use of radio frequency identification (RFID) technology in a simulated operating theatre environment. An infusion pump, of a type previously reported as having failed due to RFID EMI, was placed in radio frequency (RF) fields of various strengths, and its operation observed. Different strength RF fields were created by varying the number of RFID readers, the use of a high-gain RFID antenna, the distance between the reader(s) and the infusion pump, and the presence of an RFID tag on the infusion pump. The infusion pump was not affected by low-power RFID readers, even when in direct contact. The pump was disrupted by a high-power reader at 10 cm distance when an RFID tag was attached, and by a combination of high-power and low-power readers at 10 cm distance. Electronic medical devices may fail in the presence of high-power RFID readers, especially if the device is tagged. However, low-power RFID readers appear to be safer.

A strained silicon cold electron bolometer using Schottky contacts

NASA Astrophysics Data System (ADS)

Brien, T. L. R.; Ade, P. A. R.; Barry, P. S.; Dunscombe, C.; Leadley, D. R.; Morozov, D. V.; Myronov, M.; Parker, E. H. C.; Prest, M. J.; Prunnila, M.; Sudiwala, R. V.; Whall, T. E.; Mauskopf, P. D.

2014-07-01

We describe optical characterisation of a strained silicon cold electron bolometer (CEB), operating on a 350 mK stage, designed for absorption of millimetre-wave radiation. The silicon cold electron bolometer utilises Schottky contacts between a superconductor and an n++ doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we decrease the electron-phonon coupling in the device and increase the responsivity to incoming power. The strained silicon absorber is coupled to a planar aluminium twin-slot antenna designed to couple to 160 GHz and that serves as the superconducting contacts. From the measured optical responsivity and spectral response, we calculate a maximum optical efficiency of 50% for radiation coupled into the device by the planar antenna and an overall noise equivalent power, referred to absorbed optical power, of 1.1×10-16 W Hz-1/2 when the detector is observing a 300 K source through a 4 K throughput limiting aperture. Even though this optical system is not optimized, we measure a system noise equivalent temperature difference of 6 mK Hz-1/2. We measure the noise of the device using a cross-correlation of time stream data, measured simultaneously with two junction field-effect transistor amplifiers, with a base correlated noise level of 300 pV Hz-1/2 and find that the total noise is consistent with a combination of photon noise, current shot noise, and electron-phonon thermal noise.

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Alterovitz, Samuel A.; Katehi, Linda P. B.; Bhattacharya, Pallab K.

1997-01-01

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

Prediction and Measurement of Temperature Fields in Silicon-on-Insulator Electronic Circuits

DTIC Science & Technology

1995-08-01

common dimensions are given in Table 1. Almost all of the device power is dissipated in the channel. The electri- cally insulating implanted layer...data. Region or Component substrate Material SOI implanted insulating layers single-crystal silicon, 3 x 1015 boron atoms cm -3 Thermal... implanted silicon-dioxide layer in SOI wafers. The data for each device for varying powers fall near a line originating at P = 0 and T0 = 303 K

Hydrothermally derived nanoporous titanium dioxide nanorods/nanoparticles and their influence in dye-sensitized solar cell as a photoanode

NASA Astrophysics Data System (ADS)

Rajamanickam, Govindaraj; Narendhiran, Santhosh; Muthu, Senthil Pandian; Mukhopadhyay, Sumita; Perumalsamy, Ramasamy

2017-12-01

Titanium dioxide is a promising wide band gap semiconducting material for dye-sensitized solar cell. The poor electron transport properties still remain a challenge with conventional nanoparticles. Here, we synthesized TiO2 nanorods/nanoparticles by hydrothermal method to improve the charge transport properties. The structural and morphological information of the prepared nanorods/nanoparticles was analysed with X-ray diffraction and electron microscopy analysis, respectively. A high power conversion efficiency of 7.7% is achieved with nanorods/nanoparticles employed device under 100 mW/cm2. From the electrochemical impedance analysis, superior electron transport properties have been found for synthesized TiO2 nanorods/nanoparticles employed device than commercial P25 nanoparticles based device.

Design and Characterization of p-i-n Devices for Betavoltaic Microbatteries on Gallium Nitride

NASA Astrophysics Data System (ADS)

Khan, Muhammad Raziuddin A.

Betavoltaic microbatteries convert nuclear energy released as beta particles directly into electrical energy. These batteries are well suited for electrical applications such as micro-electro-mechanical systems (MEMS), implantable medical devices and sensors. Such devices are often located in hard to access places where long life, micro-size and lightweight are required. The working principle of a betavoltaic device is similar to a photovoltaic device; they differ only in that the electron hole pairs (EHPs) are generated in the device by electrons instead of photons. In this study, the performance of a betavoltaic device fabricated from gallium nitride (GaN) is investigated for beta particle energies equivalent to Tritium (3H) and Nickel-63 (N63) beta sources. GaN is an attractive choice for fabricating betavoltaic devices due to its wide band gap and radiation resistance. Another advantage GaN has is that it can be alloyed with aluminum (Al) to further increase the bandgap, resulting in a higher output power and increased efficiency. Betavoltaic devices were fabricated on p-i-n GaN structures grown by metalorganic chemical vapor deposition (MOCVD). The devices were characterized using current - voltage (IV) measurements without illumination (light or beta), using a laser driven light source, and under an electron beam. Dark IV measurements showed a turn on-voltage of ~ 3.4 V, specific-on-resistance of 15.1 m O-cm2, and a leakage current of 0.5 mA at -- 10 V. A clear photo-response was observed when IV curves were measured for these devices under a light source at a wavelength of 310 nm (4.0 eV). These devices were tested under an electron beam in order to evaluate their behavior as betavoltaic microbatteries without using radioactive materials. Output power of 70 nW and 640 nW with overall efficiencies of 1.2% and 4.0% were determined at the average energy emission of 3H (5.6 keV) and 63N (17 keV) respectively.

Spin Dependent Transport Properties of Metallic and Semiconducting Nanostructures

NASA Astrophysics Data System (ADS)

Sapkota, Keshab R.

Present computing and communication devices rely on two different classes of technologies; information processing devices are based on electrical charge transport in semiconducting materials while information storage devices are based on orientation of electron spins in magnetic materials. A realization of a hybrid-type device that is based on charge as well as spin properties of electrons would perform both of these actions thereby enhancing computation power to many folds and reducing power consumptions. This dissertation focuses on the fabrication of such spin-devices based on metallic and semiconducting nanostructures which can utilize spin as well as charge properties of electrons. A simplified design of the spin-device consists of a spin injector, a semiconducting or metallic channel, and a spin detector. The channel is the carrier of the spin signal from the injector to the detector and therefore plays a crucial role in the manipulation of spin properties in the device. In this work, nanostructures like nanowires and nanostripes are used to function the channel in the spin-device. Methods like electrospinning, hydrothermal, and wet chemical were used to synthesize nanowires while physical vapor deposition followed by heat treatment in controlled environment was used to synthesis nanostripes. Spin-devices fabrication of the synthesized nanostructures were carried out by electron beam lithography process. The details of synthesis of nanostructures, device fabrication procedures and measurement techniques will be discussed in the thesis. We have successfully fabricated the spin-devices of tellurium nanowire, indium nanostripe, and indium oxide nanostripe and studied their spin transport properties for the first time. These spin-devices show large spin relaxation length compared to normal metals like copper and offer potentials for the future technologies. Further, Heusler alloys nanowires like nanowires of Co 2FeAl were synthesized and studied for electrical transport properties since such systems are halfmetallic in nature and promise the possibilities of spin injection and detection. The study was extended to dilute magnetic semiconducting nanowire system of Cd1-xMnxTe which possess both magnetic and semiconducting properties. In summary, the studies made in this thesis will offer a new understanding of spin transport behavior for future technology.

Effect of increased crystallinity of single-walled carbon nanotubes used as field emitters on their electrical properties

NASA Astrophysics Data System (ADS)

Shimoi, Norihiro

2015-12-01

Single-walled carbon nanotubes (SWCNTs) synthesized by arc discharge are expected to exhibit good field emission (FE) properties at a low driving voltage. We used a coating containing homogeneously dispersed highly crystalline SWCNTs produced by a high-temperature annealing process to fabricate an FE device by a wet-coating process at a low cost. Using the coating, we succeeded in reducing the power consumption of field emitters for planar lighting devices. SWCNTs synthesized by arc discharge have crystal defects in the carbon network, which are considered to induce inelastic electron tunneling that deteriorates the electrical conductivity of the SWCNTs. In this study, the blocking of the transport of electrons in SWCNTs with crystal defects is simulated using an inelastic electron tunneling model. We succeeded in clarifying the mechanism underlying the electrical conductivity of SWCNTs by controlling their crystallinity. In addition, it was confirmed that field emitters using highly crystalline SWCNTs can lead to new applications operating with low power consumption and new devices that may change our daily lives in the future.

Effect of increased crystallinity of single-walled carbon nanotubes used as field emitters on their electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shimoi, Norihiro, E-mail: shimoi@mail.kankyo.tohoku.ac.jp

2015-12-07

Single-walled carbon nanotubes (SWCNTs) synthesized by arc discharge are expected to exhibit good field emission (FE) properties at a low driving voltage. We used a coating containing homogeneously dispersed highly crystalline SWCNTs produced by a high-temperature annealing process to fabricate an FE device by a wet-coating process at a low cost. Using the coating, we succeeded in reducing the power consumption of field emitters for planar lighting devices. SWCNTs synthesized by arc discharge have crystal defects in the carbon network, which are considered to induce inelastic electron tunneling that deteriorates the electrical conductivity of the SWCNTs. In this study, themore » blocking of the transport of electrons in SWCNTs with crystal defects is simulated using an inelastic electron tunneling model. We succeeded in clarifying the mechanism underlying the electrical conductivity of SWCNTs by controlling their crystallinity. In addition, it was confirmed that field emitters using highly crystalline SWCNTs can lead to new applications operating with low power consumption and new devices that may change our daily lives in the future.« less

A Fully Directional Universal Power Electronic Interface for EV, HEV, and PHEV Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Onar, Omer C

2012-01-01

This study focuses on a universal power electronic interface that can be utilized in any type of the electric vehicles, hybrid electric vehicles, and plug-in hybrid electric vehicles (PHEVs). Basically, the proposed converter interfaces the energy storage device of the vehicle with the motor drive and the external charger, in case of PHEVs. The proposed converter is capable of operating in all directions in buck or boost modes with a noninverted output voltage (positive output voltage with respect to the input) and bidirectional power flow.

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure.

PubMed

Kwak, Hyeon-Tak; Chang, Seung-Bo; Jung, Hyun-Gu; Kim, Hyun-Seok

2018-09-01

In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure. Then, a source-bridged field-plate (SBFP) structure was used to obtain the lower junction temperature in the 2-DEG channel layer. The peak electric field intensity was reduced, and a decrease in channel temperature resulted in an increase in electron mobility. Furthermore, the gate-to-source capacitance was increased by the SBFP structure. However, under the large current flow condition, the SBFP structure had a lower maximum temperature than the basic T-gate head structure, which improved the device electron mobility. Eventually, an optimum position of the SBFP was used, which led to higher frequency responses and improved the breakdown voltages. Hence, the optimized SBFP structure can be a promising candidate for high-power RF devices.

A megawatt-level surface wave oscillator in Y-band with large oversized structure driven by annular relativistic electron beam.

PubMed

Wang, Jianguo; Wang, Guangqiang; Wang, Dongyang; Li, Shuang; Zeng, Peng

2018-05-03

High power vacuum electronic devices of millimeter wave to terahertz regime are attracting extensive interests due to their potential applications in science and technologies. In this paper, the design and experimental results of a powerful compact oversized surface wave oscillator (SWO) in Y-band are presented. The cylindrical slow wave structure (SWS) with rectangular corrugations and large diameter about 6.8 times the radiation wavelength is proposed to support the surface wave interacting with annular relativistic electron beam. By choosing appropriate beam parameters, the beam-wave interaction takes place near the π-point of TM 01 mode dispersion curve, giving high coupling impedance and temporal growth rate compared with higher TM 0n modes. The fundamental mode operation of the device is verified by the particle-in-cell (PIC) simulation results, which also indicate its capability of tens of megawatts power output in the Y-band. Finally, a compact experimental setup is completed to validate our design. Measurement results show that a terahertz pulse with frequency in the range of 0.319-0.349 THz, duration of about 2 ns and radiation power of about 2.1 MW has been generated.

Self-heating and scaling of thin body transistors

NASA Astrophysics Data System (ADS)

Pop, Eric

The most often cited technological roadblock of nanoscale electronics is the "power problem," i.e. power densities and device temperatures reaching levels that will prevent their reliable operation. Technology roadmap (ITRS) requirements are expected to lead to more heat dissipation problems, especially with the transition towards geometrically confined device geometries (SOI, FinFET, nanowires), and new materials with poor thermal properties. This work examines the physics of heat generation in silicon, and in the context of nanoscale CMOS transistors. A new Monte Carlo code (MONET) is introduced which uses analytic descriptions of both the electron bands and the phonon dispersion. Detailed heat generation statistics are computed in bulk and strained silicon, and within simple device geometries. It is shown that non-stationary transport affects heat generation near strongly peaked electric fields, and that self-heating occurs almost entirely in the drain end of short, quasi-ballistic devices. The dissipated power is spectrally distributed between the (slow) optical and (fast) acoustic phonon modes approximately by a ratio of two to one. In addition, this work explores the limits of device design and scaling from an electrical and thermal point of view. A self-consistent electro-thermal compact model for thin-body (SOI, GOI) devices is introduced for calculating operating temperature, saturation current and intrinsic gate delay. Self-heating is sensitive to several device parameters, such as raised source/drain height and material boundary thermal resistance. An experimental method is developed for extracting via/contact thermal resistance from electrical measurements. The analysis suggests it is possible to optimize device geometry in order to simultaneously minimize operating temperature and intrinsic gate delay. Electro-thermal contact and device design are expected to become more important with continued scaling.

Intrinsic magnetic refrigeration of a single electron transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ciccarelli, C.; Ferguson, A. J.; Campion, R. P.

In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique and show that the quantity of metal used to fabricate the devices generates enough cooling power to achieve a drop of 160 mK in the electron temperature at the base temperature of our cryostat (300 mK). The cooling mechanism is based on the magneto-caloric effect from the diluted Mn moments.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilberto

Thermal modeling was conducted to evaluate and develop thermal management strategies for high-temperature wide-bandgap (WBG)-based power electronics systems. WBG device temperatures of 175 degrees C to 250 degrees C were modeled under various under-hood temperature environments. Modeling result were used to identify the most effective capacitor cooling strategies under high device temperature conditions.

High-Power, High-Efficiency Ka-Band Space Traveling-Wave Tube

NASA Technical Reports Server (NTRS)

Krawczyk, Richard; Wilson, Jeffrey; Simons, Rainee; Williams, Wallace; Bhasin, Kul; Robbins, Neal; Dibb, Daniel; Menninger, William; Zhai, Xiaoling; Benton, Robert;

Compact, Low-Profile Power Converters: Highly-Laminated, High-Saturation-Flux-Density, Magnetic Cores for On-Chip Inductors in Power Converter Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-09-01

ADEPT Project: Georgia Tech is creating compact, low-profile power adapters and power bricks using materials and tools adapted from other industries and from grid-scale power applications. Adapters and bricks convert electrical energy into useable power for many types of electronic devices, including laptop computers and mobile phones. These converters are often called wall warts because they are big, bulky, and sometimes cover up an adjacent wall socket that could be used to power another electronic device. The magnetic components traditionally used to make adapters and bricks have reached their limits; they can't be made any smaller without sacrificing performance. Georgiamore » Tech is taking a cue from grid-scale power converters that use iron alloys as magnetic cores. These low-cost alloys can handle more power than other materials, but the iron must be stacked in insulated plates to maximize energy efficiency. In order to create compact, low-profile power adapters and bricks, these stacked iron plates must be extremely thin-only hundreds of nanometers in thickness, in fact. To make plates this thin, Georgia Tech is using manufacturing tools used in microelectromechanics and other small-scale industries.« less

Switching Matrix For Optical Signals

NASA Technical Reports Server (NTRS)

Grove, Charles H.

1990-01-01

Proposed matrix of electronically controlled shutters switches signals in optical fibers between multiple input and output channels. Size, weight, and power consumption reduced. Device serves as building block for small, low-power, broad-band television- and data-signal-switching systems providing high isolation between nominally disconnected channels.

Sub-Shot Noise Power Source for Microelectronics

NASA Technical Reports Server (NTRS)

Strekalov, Dmitry V.; Yu, Nan; Mansour, Kamjou

2011-01-01

Low-current, high-impedance microelectronic devices can be affected by electric current shot noise more than they are affected by Nyquist noise, even at room temperature. An approach to implementing a sub-shot noise current source for powering such devices is based on direct conversion of amplitude-squeezed light to photocurrent. The phenomenon of optical squeezing allows for the optical measurements below the fundamental shot noise limit, which would be impossible in the domain of classical optics. This becomes possible by affecting the statistical properties of photons in an optical mode, which can be considered as a case of information encoding. Once encoded, the information describing the photon (or any other elementary excitations) statistics can be also transmitted. In fact, it is such information transduction from optics to an electronics circuit, via photoelectric effect, that has allowed the observation of the optical squeezing. It is very difficult, if not technically impossible, to directly measure the statistical distribution of optical photons except at extremely low light level. The photoelectric current, on the other hand, can be easily analyzed using RF spectrum analyzers. Once it was observed that the photocurrent noise generated by a tested light source in question is below the shot noise limit (e.g. produced by a coherent light beam), it was concluded that the light source in question possess the property of amplitude squeezing. The main novelty of this technology is to turn this well-known information transduction approach around. Instead of studying the statistical property of an optical mode by measuring the photoelectron statistics, an amplitude-squeezed light source and a high-efficiency linear photodiode are used to generate photocurrent with sub-Poissonian electron statistics. By powering microelectronic devices with this current source, their performance can be improved, especially their noise parameters. Therefore, a room-temperature sub-shot noise current source can be built that will be beneficial for a very broad range of low-power, low-noise electronic instruments and applications, both cryogenic and room-temperature. Taking advantage of recent demonstrations of the squeezed light sources based on optical micro-disks, this sub-shot noise current source can be made compatible with the size/power requirements specific of the electronic devices it will support.

A self-powered biosensing device with an integrated hybrid biofuel cell for intermittent monitoring of analytes.

PubMed

Majdecka, Dominika; Draminska, Sylwia; Janusek, Dariusz; Krysinski, Paweł; Bilewicz, Renata

2018-04-15

In this work, we propose an integrated self-powered sensing system, driven by a hybrid biofuel cell (HBFC) with carbon paper discs coated with multiwalled carbon nanotubes. The sensing system has a biocathode made from laccase or bilirubin oxidase, and the anode is made from a zinc plate. The system includes a dedicated custom-built electronic control unit for the detection of oxygen and catechol analytes, which are central to medical and environmental applications. Both the HBFC and sensors, operate in a mediatorless direct electron transfer mode. The measured characteristics of the HBFC with externally applied resistance included the power-time dependencies under flow cell conditions, the sensors performance (evaluated by cyclic voltammetry), and chronoamperometry. The HBFC is integrated with analytical devices and operating in a pulse mode form long-run monitoring experiments. The HBFC generated sufficient power for wireless data transmission to a local computer. Copyright © 2017 Elsevier B.V. All rights reserved.

Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption.

PubMed

Vurgaftman, I; Bewley, W W; Canedy, C L; Kim, C S; Kim, M; Merritt, C D; Abell, J; Lindle, J R; Meyer, J R

2011-12-13

The interband cascade laser differs from any other class of semiconductor laser, conventional or cascaded, in that most of the carriers producing population inversion are generated internally, at semimetallic interfaces within each stage of the active region. Here we present simulations demonstrating that all previous interband cascade laser performance has suffered from a significant imbalance of electron and hole densities in the active wells. We further confirm experimentally that correcting this imbalance with relatively heavy n-type doping in the electron injectors substantially reduces the threshold current and power densities relative to all earlier devices. At room temperature, the redesigned devices require nearly two orders of magnitude less input power to operate in continuous-wave mode than the quantum cascade laser. The interband cascade laser is consequently the most attractive option for gas sensing and other spectroscopic applications requiring low output power and minimum heat dissipation at wavelengths extending from 3 μm to beyond 6 μm.

Wearable Large-Scale Perovskite Solar-Power Source via Nanocellular Scaffold.

PubMed

Hu, Xiaotian; Huang, Zengqi; Zhou, Xue; Li, Pengwei; Wang, Yang; Huang, Zhandong; Su, Meng; Ren, Wanjie; Li, Fengyu; Li, Mingzhu; Chen, Yiwang; Song, Yanlin

2017-11-01

Dramatic advances in perovskite solar cells (PSCs) and the blossoming of wearable electronics have triggered tremendous demands for flexible solar-power sources. However, the fracturing of functional crystalline films and transmittance wastage from flexible substrates are critical challenges to approaching the high-performance PSCs with flexural endurance. In this work, a nanocellular scaffold is introduced to architect a mechanics buffer layer and optics resonant cavity. The nanocellular scaffold releases mechanical stresses during flexural experiences and significantly improves the crystalline quality of the perovskite films. The nanocellular optics resonant cavity optimizes light harvesting and charge transportation of devices. More importantly, these flexible PSCs, which demonstrate excellent performance and mechanical stability, are practically fabricated in modules as a wearable solar-power source. A power conversion efficiency of 12.32% for a flexible large-scale device (polyethylene terephthalate substrate, indium tin oxide-free, 1.01 cm 2 ) is achieved. This ingenious flexible structure will enable a new approach for development of wearable electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible Transparent Supercapacitors Based on Hierarchical Nanocomposite Films.

PubMed

Chen, Fanhong; Wan, Pengbo; Xu, Haijun; Sun, Xiaoming

2017-05-31

Flexible transparent electronic devices have recently gained immense popularity in smart wearable electronics and touch screen devices, which accelerates the development of the portable power sources with reliable flexibility, robust transparency and integration to couple these electronic devices. For potentially coupled as energy storage modules in various flexible, transparent and portable electronics, the flexible transparent supercapacitors are developed and assembled from hierarchical nanocomposite films of reduced graphene oxide (rGO) and aligned polyaniline (PANI) nanoarrays upon their synergistic advantages. The nanocomposite films are fabricated from in situ PANI nanoarrays preparation in a blended solution of aniline monomers and rGO onto the flexible, transparent, and stably conducting film (FTCF) substrate, which is obtained by coating silver nanowires (Ag NWs) layer with Meyer rod and then coating of rGO layer on polyethylene terephthalate (PET) substrate. Optimization of the transparency, the specific capacitance, and the flexibility resulted in the obtained all-solid state nanocomposite supercapacitors exhibiting enhanced capacitance performance, good cycling stability, excellent flexibility, and superior transparency. It provides promising application prospects for exploiting flexible, low-cost, transparent, and high-performance energy storage devices to be coupled into various flexible, transparent, and wearable electronic devices.

A Bioelectrochemical Approach to Characterize Extracellular Electron Transfer by Synechocystis sp. PCC6803

PubMed Central

Cereda, Angelo; Hitchcock, Andrew; Symes, Mark D.; Cronin, Leroy; Bibby, Thomas S.; Jones, Anne K.

2014-01-01

Biophotovoltaic devices employ photosynthetic organisms at the anode of a microbial fuel cell to generate electrical power. Although a range of cyanobacteria and algae have been shown to generate photocurrent in devices of a multitude of architectures, mechanistic understanding of extracellular electron transfer by phototrophs remains minimal. Here we describe a mediatorless bioelectrochemical device to measure the electrogenic output of a planktonically grown cyanobacterium, Synechocystis sp. PCC6803. Light dependent production of current is measured, and its magnitude is shown to scale with microbial cell concentration and light intensity. Bioelectrochemical characterization of a Synechocystis mutant lacking Photosystem II demonstrates conclusively that production of the majority of photocurrent requires a functional water splitting aparatus and electrons are likely ultimately derived from water. This shows the potential of the device to rapidly and quantitatively characterize photocurrent production by genetically modified strains, an approach that can be used in future studies to delineate the mechanisms of cyanobacterial extracellular electron transport. PMID:24637387

1.6 V nanogenerator for mechanical energy harvesting using PZT nanofibers.

PubMed

Chen, Xi; Xu, Shiyou; Yao, Nan; Shi, Yong

2010-06-09

Energy harvesting technologies that are engineered to miniature sizes, while still increasing the power delivered to wireless electronics, (1, 2) portable devices, stretchable electronics, (3) and implantable biosensors, (4, 5) are strongly desired. Piezoelectric nanowire- and nanofiber-based generators have potential uses for powering such devices through a conversion of mechanical energy into electrical energy. (6) However, the piezoelectric voltage constant of the semiconductor piezoelectric nanowires in the recently reported piezoelectric nanogenerators (7-12) is lower than that of lead zirconate titanate (PZT) nanomaterials. Here we report a piezoelectric nanogenerator based on PZT nanofibers. The PZT nanofibers, with a diameter and length of approximately 60 nm and 500 microm, were aligned on interdigitated electrodes of platinum fine wires and packaged using a soft polymer on a silicon substrate. The measured output voltage and power under periodic stress application to the soft polymer was 1.63 V and 0.03 microW, respectively.

A Demo opto-electronic power source based on single-walled carbon nanotube sheets.

PubMed

Hu, Chunhua; Liu, Changhong; Chen, Luzhuo; Meng, Chuizhou; Fan, Shoushan

2010-08-24

It is known that single-walled carbon nanotubes (SWNTs) strongly absorb light, especially in the near-infrared (NIR) region, and convert it into heat. In fact, SWNTs also have considerable ability to convert heat into electricity. In this work, we show that SWNT sheets made from as-grown SWNT arrays display a large positive thermoelectric coefficient (p-type). We designed a simple SWNT device to convert illuminating NIR light directly into a notable voltage output, which was verified by experimental tests. Furthermore, by a simple functionalization step, the p- to n-type transition was conveniently achieved for the SWNT sheets. By integrating p- and n-type elements in series, we constructed a novel NIR opto-electronic power source, which outputs a large voltage that sums over the output of every single element. Additionally, the output of the demo device has shown a good linear relationship with NIR light power density, favorable for IR sensors.

Japanese power electronics inverter technology and its impact on the American air conditioning industry

NASA Astrophysics Data System (ADS)

Ushimaru, Kenji

1990-08-01

Since 1983, technological advances and market growth of inverter-driven variable-speed heat pumps in Japan have been dramatic. The high level of market penetration was promoted by a combination of political, economic, and trade policies in Japan. A unique environment was created in which the leading domestic industries, microprocessor manufacturing, compressors for air conditioning and refrigerators, and power electronic devices, were able to direct the development and market success of inverter-driven heat pumps. As a result, leading U.S. variable-speed heat pump manufacturers should expect a challenge from the Japanese producers of power devices and microprocessors. Because of the vertically-integrated production structure in Japan, in contrast to the out-sourcing culture of the United States, price competition at the component level (such as inverters, sensors, and controls) may impact the structure of the industry more severely than final product sales.

Investigation of direct solar-to-microwave energy conversion techniques

NASA Technical Reports Server (NTRS)

Chatterton, N. E.; Mookherji, T. K.; Wunsch, P. K.

1978-01-01

Identification of alternative methods of producing microwave energy from solar radiation for purposes of directing power to the Earth from space is investigated. Specifically, methods of conversion of optical radiation into microwave radiation by the most direct means are investigated. Approaches based on demonstrated device functioning and basic phenomenologies are developed. There is no system concept developed, that is competitive with current baseline concepts. The most direct methods of conversion appear to require an initial step of production of coherent laser radiation. Other methods generally require production of electron streams for use in solid-state or cavity-oscillator systems. Further development is suggested to be worthwhile for suggested devices and on concepts utilizing a free-electron stream for the intraspace station power transport mechanism.

The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2012-01-01

Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

Power Consumption and Calculation Requirement Analysis of AES for WSN IoT.

PubMed

Hung, Chung-Wen; Hsu, Wen-Ting

2018-05-23

Because of the ubiquity of Internet of Things (IoT) devices, the power consumption and security of IoT systems have become very important issues. Advanced Encryption Standard (AES) is a block cipher algorithm is commonly used in IoT devices. In this paper, the power consumption and cryptographic calculation requirement for different payload lengths and AES encryption types are analyzed. These types include software-based AES-CB, hardware-based AES-ECB (Electronic Codebook Mode), and hardware-based AES-CCM (Counter with CBC-MAC Mode). The calculation requirement and power consumption for these AES encryption types are measured on the Texas Instruments LAUNCHXL-CC1310 platform. The experimental results show that the hardware-based AES performs better than the software-based AES in terms of power consumption and calculation cycle requirements. In addition, in terms of AES mode selection, the AES-CCM-MIC64 mode may be a better choice if the IoT device is considering security, encryption calculation requirement, and low power consumption at the same time. However, if the IoT device is pursuing lower power and the payload length is generally less than 16 bytes, then AES-ECB could be considered.

Accelerated Aging System for Prognostics of Power Semiconductor Devices

NASA Technical Reports Server (NTRS)

Celaya, Jose R.; Vashchenko, Vladislav; Wysocki, Philip; Saha, Sankalita

2010-01-01

Prognostics is an engineering discipline that focuses on estimation of the health state of a component and the prediction of its remaining useful life (RUL) before failure. Health state estimation is based on actual conditions and it is fundamental for the prediction of RUL under anticipated future usage. Failure of electronic devices is of great concern as future aircraft will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. Therefore, development of prognostics solutions for electronics is of key importance. This paper presents an accelerated aging system for gate-controlled power transistors. This system allows for the understanding of the effects of failure mechanisms, and the identification of leading indicators of failure which are essential in the development of physics-based degradation models and RUL prediction. In particular, this system isolates electrical overstress from thermal overstress. Also, this system allows for a precise control of internal temperatures, enabling the exploration of intrinsic failure mechanisms not related to the device packaging. By controlling the temperature within safe operation levels of the device, accelerated aging is induced by electrical overstress only, avoiding the generation of thermal cycles. The temperature is controlled by active thermal-electric units. Several electrical and thermal signals are measured in-situ and recorded for further analysis in the identification of leading indicators of failures. This system, therefore, provides a unique capability in the exploration of different failure mechanisms and the identification of precursors of failure that can be used to provide a health management solution for electronic devices.

Emission analysis of large number of various passenger electronic devices in aircraft

NASA Astrophysics Data System (ADS)

Schüür, Jens; Oppermann, Lukas; Enders, Achim; Nunes, Rafael R.; Oertel, Carl-Henrik

2016-09-01

The ever increasing use of PEDs (passenger or portable electronic devices) has put pressure on the aircraft industry as well as operators and administrations to reevaluate established restrictions in PED-use on airplanes in the last years. Any electronic device could cause electromagnetic interference to the electronics of the airplane, especially interference at receiving antennas of sensitive wireless navigation and communication (NAV/COM) systems. This paper presents a measurement campaign in an Airbus A320. 69 test passengers were asked to actively use a combination of about 150 electronic devices including many attached cables, preferentially with a high data load on their buses, to provoke maximal emissions. These emissions were analysed within the cabin as well as at the inputs of aircraft receiving antennas outside of the fuselage. The emissions of the electronic devices as well as the background noise are time-variant, so just comparing only one reference and one transmission measurement is not sufficient. Repeated measurements of both cases lead to a more reliable first analysis. Additional measurements of the absolute received power at the antennas of the airplane allow a good estimation of the real interference potential to aircraft NAV/COM systems. Although there were many measured emissions within the cabin, there were no disturbance signals detectable at the aircraft antennas.

Frontiers of More than Moore in Bioelectronics and the Required Metrology Needs

NASA Astrophysics Data System (ADS)

Guiseppi-Elie, Anthony; Kotanen, Christian; Wilson, A. Nolan

2011-11-01

Silicon's intersection with biology is a premise inherent in Moore's prediction. Distinct from biologically inspired molecular logic and storage devices (more Moore) are the integration of solid state electronic devices with the soft condensed state of the body (more than Moore). Developments in biomolecular recognition events per sq. cm parallel those of Moore's Law. However, challenges continue in the area of "More than Moore". Two grand challenge problems must be addressed—the biocompatibility of synthetic materials with the myriad of tissue types within the human body and the interfacing of solid state micro- and nano-electronic devices with the electronics of biological systems. Electroconductive hydrogels have been developed as soft, condensed, biomimetic but otherwise inherently electronically conductive materials to address the challenge of interfacing solid state devices with the electronics of the body, which is predominantly ionic. Nano-templated interfaces via the oriented immobilization of single walled carbon nanotubes (SWCNTs) onto metallic electrodes have engendered reagentless, direct electron transfer between biological redox enzymes and solid state electrodes. In addressing these challenges, metrology needs and opportunities are found in such widely diverse areas as single molecule counting and addressing, sustainable power requirements such as the development of implantable biofuel cells for the deployment of implantable biochips, and new manufacturing paradigms to address plura-biology needs on solid state devices.

Organic photovoltaic cell incorporating electron conducting exciton blocking layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Forrest, Stephen R.; Lassiter, Brian E.

2014-08-26

The present disclosure relates to photosensitive optoelectronic devices including a compound blocking layer located between an acceptor material and a cathode, the compound blocking layer including: at least one electron conducting material, and at least one wide-gap electron conducting exciton blocking layer. For example, 3,4,9,10 perylenetetracarboxylic bisbenzimidazole (PTCBI) and 1,4,5,8-napthalene-tetracarboxylic-dianhydride (NTCDA) function as electron conducting and exciton blocking layers when interposed between the acceptor layer and cathode. Both materials serve as efficient electron conductors, leading to a fill factor as high as 0.70. By using an NTCDA/PTCBI compound blocking layer structure increased power conversion efficiency is achieved, compared to anmore » analogous device using a conventional blocking layers shown to conduct electrons via damage-induced midgap states.« less

Experimental observation of electron-temperature-gradient turbulence in a laboratory plasma.

PubMed

Mattoo, S K; Singh, S K; Awasthi, L M; Singh, R; Kaw, P K

2012-06-22

We report the observation of electron-temperature-gradient (ETG) driven turbulence in the laboratory plasma of a large volume plasma device. The removal of unutilized primary ionizing and nonthermal electrons from uniform density plasma and the imposition and control of the gradient in the electron temperature (T[Symbol: see text] T(e)) are all achieved by placing a large (2 m diameter) magnetic electron energy filter in the middle of the device. In the dressed plasma, the observed ETG turbulence in the lower hybrid range of frequencies ν = (1-80 kHz) is characterized by a broadband with a power law. The mean wave number k perpendicular ρ(e) = (0.1-0.2) satisfies the condition k perpendicular ρ(e) ≤ 1, where ρ(e) is the electron Larmor radius.

Design of a telemetry system based on wireless power transmission for physiological parameter monitoring

NASA Astrophysics Data System (ADS)

Jia, Zhiwei; Yan, Guozheng; Zhu, Bingquan

2015-04-01

An implanted telemetry system for experimental animals with or without anaesthesia can be used to continuously monitor physiological parameters. This system is significant not only in the study of organisms but also in the evaluation of drug efficacy, artificial organs, and auxiliary devices. The system is composed of a miniature electronic capsule, a wireless power transmission module, a data-recording device, and a processing module. An electrocardiograph, a temperature sensor, and a pressure sensor are integrated in the miniature electronic capsule, in which the signals are transmitted in vitro by wireless communication after filtering, amplification, and A/D sampling. To overcome the power shortage of batteries, a wireless power transmission module based on electromagnetic induction was designed. The transmitting coil of a rectangular-section solenoid and a 3D receiving coil are proposed according to stability and safety constraints. Experiments show that at least 150 mW of power could pick up on the load in a volume of Φ10.5 mm × 11 mm, with a transmission efficiency of 2.56%. Vivisection experiments verified the feasibility of the integrated radio-telemetry system.

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamichhane, Ranjan; Ericson, Milton Nance; Frank, Steven Shane

2014-01-01

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz tomore » 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.« less

Transition metal oxides for organic electronics: energetics, device physics and applications.

PubMed

Meyer, Jens; Hamwi, Sami; Kröger, Michael; Kowalsky, Wolfgang; Riedl, Thomas; Kahn, Antoine

2012-10-23

During the last few years, transition metal oxides (TMO) such as molybdenum tri-oxide (MoO(3) ), vanadium pent-oxide (V(2) O(5) ) or tungsten tri-oxide (WO(3) ) have been extensively studied because of their exceptional electronic properties for charge injection and extraction in organic electronic devices. These unique properties have led to the performance enhancement of several types of devices and to a variety of novel applications. TMOs have been used to realize efficient and long-term stable p-type doping of wide band gap organic materials, charge-generation junctions for stacked organic light emitting diodes (OLED), sputtering buffer layers for semi-transparent devices, and organic photovoltaic (OPV) cells with improved charge extraction, enhanced power conversion efficiency and substantially improved long term stability. Energetics in general play a key role in advancing device structure and performance in organic electronics; however, the literature provides a very inconsistent picture of the electronic structure of TMOs and the resulting interpretation of their role as functional constituents in organic electronics. With this review we intend to clarify some of the existing misconceptions. An overview of TMO-based device architectures ranging from transparent OLEDs to tandem OPV cells is also given. Various TMO film deposition methods are reviewed, addressing vacuum evaporation and recent approaches for solution-based processing. The specific properties of the resulting materials and their role as functional layers in organic devices are discussed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High resolution in-operando microimaging of solar cells with pulsed electrically-detected magnetic resonance

NASA Astrophysics Data System (ADS)

Katz, Itai; Fehr, Matthias; Schnegg, Alexander; Lips, Klaus; Blank, Aharon

2015-02-01

The in-operando detection and high resolution spatial imaging of paramagnetic defects, impurities, and states becomes increasingly important for understanding loss mechanisms in solid-state electronic devices. Electron spin resonance (ESR), commonly employed for observing these species, cannot meet this challenge since it suffers from limited sensitivity and spatial resolution. An alternative and much more sensitive method, called electrically-detected magnetic resonance (EDMR), detects the species through their magnetic fingerprint, which can be traced in the device's electrical current. However, until now it could not obtain high resolution images in operating electronic devices. In this work, the first spatially-resolved electrically-detected magnetic resonance images (EDMRI) of paramagnetic states in an operating real-world electronic device are provided. The presented method is based on a novel microwave pulse sequence allowing for the coherent electrical detection of spin echoes in combination with powerful pulsed magnetic-field gradients. The applicability of the method is demonstrated on a device-grade 1-μm-thick amorphous silicon (a-Si:H) solar cell and an identical device that was degraded locally by an electron beam. The degraded areas with increased concentrations of paramagnetic defects lead to a local increase in recombination that is mapped by EDMRI with ∼20-μm-scale pixel resolution. The novel approach presented here can be widely used in the nondestructive in-operando three-dimensional characterization of solid-state electronic devices with a resolution potential of less than 100 nm.

Thermal modeling of wide bandgap semiconductor devices for high frequency power converters

NASA Astrophysics Data System (ADS)

Sharath Sundar Ram, S.; Vijayakumari, A.

2018-02-01

The emergence of wide bandgap semiconductors has led to development of new generation semiconductor switches that are highly efficient and scalable. To exploit the advantages of GaNFETs in power converters, in terms of reduction in the size of heat sinks and filters, a thorough understanding of the thermal behavior of the device is essential. This paper aims to establish a thermal model for wideband gap semiconductor GaNFETs commercially available, which will enable power electronic designers to obtain the thermal characteristics of the device more effectively. The model parameters is obtained from the manufacturer’s data sheet by adopting an exponential curve fitting technique and the thermal model is validated using PSPICE simulations. The model was developed based on the parametric equivalence that exists between the thermal and electrical components, such that it responds for transient thermal stresses. A suitable power profile has been generated to evaluate the GaNFET model under different power dissipation scenarios. The results were compared with a Silicon MOSFETs to further highlight the advantages of the GaN devices. The proposed modeling approach can be extended for other GaN devices and can provide a platform for the thermal study and heat sink optimization.

Ultralow Power Consumption Flexible Biomemristors.

PubMed

Kim, Min-Kyu; Lee, Jang-Sik

2018-03-28

Low power consumption is the important requirement in memory devices for saving energy. In particular, improved energy efficiency is essential in implantable electronic devices for operation under a limited power supply. Here, we demonstrate the use of κ-carrageenan (κ-car) as the resistive switching layer to achieve memory that has low power consumption. A carboxymethyl (CM) group is introduced to the κ-car to increase its ionic conductivity. Ag was doped in CM:κ-car to improve the resistive switching properties of the devices. Memory devices based on Ag-doped CM:κ-car showed electroforming-free resistive switching. This device exhibited low reset voltage (∼0.05 V), fast switching speed (50 ns), and high on/off ratio (>10 3 ) under low compliance current (10 -5 A). Its power consumption (∼0.35 μW) is much lower than those of the previously reported biomemristors. The resistive switching may be a result of an electrochemical redox process and Ag filament formation in the CM:κ-car under an electric field. This biopolymer memory can also be fabricated on flexible substrate. This study verifies the feasibility of using biopolymers for applications to future implantable and biocompatible nanoelectronics.

Low-noise and wideband hot-electron superconductive mixer for terahertz frequencies

NASA Astrophysics Data System (ADS)

Karasik, Boris S.; Skalare, Anders; McGrath, William R.; Bumble, Bruce; Leduc, Henry G.; Barner, J. B.; Kleinsasser, Alan W.; Burke, P. J.; Schoelkopf, Robert J.; Prober, Daniel E.

1998-11-01

Superconductive hot-electron bolometer (HEB) mixers have been built and tested in the frequency range from 1.1 THz to 2.5 THz. The mixer device is a 0.15 - 0.3 micrometer microbridge made from a 10 nm thick Nb film. This device employs diffusion as a cooling mechanism for hot electrons. The double sideband noise temperature was measured to be less than or equal to 3000 K at 2.5 THz and the mixer IF bandwidth is expected to be at least 10 GHz for a 0.1 micrometer long device. The local oscillator (LO) power dissipated in the HEB microbridge was 20 - 100 nW. Further improvement of the mixer characteristics can be potentially achieved by using Al microbridges. The advantages and parameters of such devices are evaluated. The HEB mixer is a primary candidate for ground based, airborne and spaceborne heterodyne instruments at THz frequencies. HEB receivers are planned for use on the NASA Stratospheric Observatory for Infrared Astronomy (SOFIA) and the ESA Far Infrared and Submillimeter Space Telescope (FIRST). The prospects of a submicron-size YBa2Cu3O7-(delta ) (YBCO) HEB are discussed. The expected LO power of 1 - 10 (mu) W and SSB noise temperature of approximately equals 2000 K may make this mixer attractive for various remote sensing applications.

Ultra-low power, highly uniform polymer memory by inserted multilayer graphene electrode

NASA Astrophysics Data System (ADS)

Jang, Byung Chul; Seong, Hyejeong; Kim, Jong Yun; Koo, Beom Jun; Kim, Sung Kyu; Yang, Sang Yoon; Gap Im, Sung; Choi, Sung-Yool

2015-12-01

Filament type resistive random access memory (RRAM) based on polymer thin films is a promising device for next generation, flexible nonvolatile memory. However, the resistive switching nonuniformity and the high power consumption found in the general filament type RRAM devices present critical issues for practical memory applications. Here, we introduce a novel approach not only to reduce the power consumption but also to improve the resistive switching uniformity in RRAM devices based on poly(1,3,5-trimethyl-3,4,5-trivinyl cyclotrisiloxane) by inserting multilayer graphene (MLG) at the electrode/polymer interface. The resistive switching uniformity was thereby significantly improved, and the power consumption was markedly reduced by 250 times. Furthermore, the inserted MLG film enabled a transition of the resistive switching operation from unipolar resistive switching to bipolar resistive switching and induced self-compliance behavior. The findings of this study can pave the way toward a new area of application for graphene in electronic devices.

Fundamentals handbook of electrical and computer engineering. Volume 1 Circuits fields and electronics

NASA Astrophysics Data System (ADS)

Chang, S. S. L.

State of the art technology in circuits, fields, and electronics is discussed. The principles and applications of these technologies to industry, digital processing, microwave semiconductors, and computer-aided design are explained. Important concepts and methodologies in mathematics and physics are reviewed, and basic engineering sciences and associated design methods are dealt with, including: circuit theory and the design of magnetic circuits and active filter synthesis; digital signal processing, including FIR and IIR digital filter design; transmission lines, electromagnetic wave propagation and surface acoustic wave devices. Also considered are: electronics technologies, including power electronics, microwave semiconductors, GaAs devices, and magnetic bubble memories; digital circuits and logic design.

Renewable-emodin-based wearable supercapacitors.

PubMed

Hu, Pengfei; Chen, Tinghan; Yang, Yun; Wang, Hua; Luo, Zihao; Yang, Jie; Fu, Haoran; Guo, Lin

2017-01-26

With the increasing dependency of human life on wearable electronics, the development of corresponding energy-storage devices is being insensitively pursued. Considering the special usage locations of wearable energy-storage devices, the safety and non-toxicity of electrode materials adopted should be of concern. In this work, a novel all-solid-state wearable supercapacitor based on the renewable-biomolecule emodin, naturally derivable from traditional Chinese herbal rhubarb or Polygonum cuspidatum, was successfully fabricated. Such supercapacitors exhibited excellent charge storage and rate capability with great flexibility and could be integrated into wearable electronics. As a proof of concept, a strap-shaped supercapacitor was fabricated, and it was capable of powering an electronic watch. Our work will promote the development of safe wearable electronics.

Investigations of 2.9-GHz Resonant Microwave-Sensitive Ag/MgO/Ge/Ag Tunneling Diodes

NASA Astrophysics Data System (ADS)

Qasrawi, A. F.; Khanfar, H. K.

2013-12-01

In this work, a resonant microwave-sensitive tunneling diode has been designed and investigated. The device, which is composed of a magnesium oxide (MgO) layer on an amorphous germanium (Ge) thin film, was characterized by means of temperature-dependent current ( I)-voltage ( V), room-temperature differential resistance ( R)-voltage, and capacitance ( C)-voltage characteristics. The device resonating signal was also tested and evaluated at 2.9 GHz. The I- V curves reflected weak temperature dependence and a wide tunneling region with peak-to-valley current ratio of ˜1.1. The negative differential resistance region shifts toward lower biasing voltages as temperature increases. The true operational limit of the device was determined as 350 K. A novel response of the measured R- V and C- V to the incident alternating-current (ac) signal was observed at 300 K. Particularly, the response to a 100-MHz signal power ranging from the standard Bluetooth limit to the maximum output power of third-generation mobile phones reflects a wide range of tunability with discrete switching property at particular power limits. In addition, when the tunnel device was implanted as an amplifier for a 2.90-GHz resonating signal of the power of wireless local-area network (LAN) levels, signal gain of 80% with signal quality factor of 4.6 × 104 was registered. These remarkable properties make devices based on MgO-Ge interfaces suitable as electronic circuit elements for microwave applications, bias- and time-dependent electronic switches, and central processing unit (CPU) clocks.

A dual channel three-terminal np-LDMOS with both majorities for conduction

NASA Astrophysics Data System (ADS)

Kong, Moufu; Yi, Bo; Zhang, Bingke

2018-02-01

A novel dual channel three-terminal np-LDMOS power device with both electrons and holes for conduction is proposed in this paper. Based on a new approach of inducing a large-signal which is processed by a simple circuit for controlling the gate of p-LDMOS inside the device, the new np-LDMOS only requires one external gate controlling voltage signal that can be performed as an n-LDMOS device. The SOA of the new device is improved in comparison with the n-LDMOS device, since the counteracting of electric flux density produced by the both type of carriers' currents. Furthermore, the specific on-resistance of the np-LDMOS device is reduced by about 19% when comparing with that of the conventional one. The control method and performances of the proposed power device are investigated and authenticated by numerical simulations.

Measurement technology of RF interference current in high current system

NASA Astrophysics Data System (ADS)

Zhao, Zhihua; Li, Jianxuan; Zhang, Xiangming; Zhang, Lei

2018-06-01

Current probe is a detection method commonly used in electromagnetic compatibility. With the development of power electronics technology, the power level of power conversion devices is constantly increasing, and the power current of the electric energy conversion device in the electromagnetic launch system can reach 10kA. Current probe conventionally used in EMC (electromagnetic compatibility) detection cannot meet the test requirements on high current system due to the magnetic saturation problem. The conventional high current sensor is also not suitable for the RF (Radio Frequency) interference current measurement in high current power device due to the high noise level in the output of active amplifier. In this paper, a passive flexible current probe based on Rogowski coil and matching resistance is proposed that can withstand high current and has low noise level, to solve the measurement problems of interference current in high current power converter. And both differential mode and common mode current detection can be easily carried out with the proposed probe because of the probe's flexible structure.

Methodology to model the energy and greenhouse gas emissions of electronic software distributions.

PubMed

Williams, Daniel R; Tang, Yinshan

2012-01-17

A new electronic software distribution (ESD) life cycle analysis (LCA) methodology and model structure were constructed to calculate energy consumption and greenhouse gas (GHG) emissions. In order to counteract the use of high level, top-down modeling efforts, and to increase result accuracy, a focus upon device details and data routes was taken. In order to compare ESD to a relevant physical distribution alternative, physical model boundaries and variables were described. The methodology was compiled from the analysis and operational data of a major online store which provides ESD and physical distribution options. The ESD method included the calculation of power consumption of data center server and networking devices. An in-depth method to calculate server efficiency and utilization was also included to account for virtualization and server efficiency features. Internet transfer power consumption was analyzed taking into account the number of data hops and networking devices used. The power consumed by online browsing and downloading was also factored into the model. The embedded CO(2)e of server and networking devices was proportioned to each ESD process. Three U.K.-based ESD scenarios were analyzed using the model which revealed potential CO(2)e savings of 83% when ESD was used over physical distribution. Results also highlighted the importance of server efficiency and utilization methods.

Cooling Concepts for High Power Density Magnetic Devices

NASA Astrophysics Data System (ADS)

Biela, Juergen; Kolar, Johann W.

In the area or power electronics there is a general trend to higher power densities. In order to increase the power density the systems must be designed optimally concerning topology, semiconductor selection, etc. and the volume of the components must be decreased. The decreasing volume comes along with a reduced surface for cooling. Consequently, new cooling methods are required. In the paper an indirect air cooling system for magnetic devices which combines the transformer with a heat sink and a heat transfer component is presented. Moreover, an analytic approach for calculating the temperature distribution is derived and validated by measurements. Based on these equations a transformer with an indirect air cooling system is designed for a 10kW telecom power supply.

Research and Development of a High Power-Laser Driven Electron-Accelerator Suitable for Applications

DTIC Science & Technology

2011-06-12

autocorrelator to measure the temporal duration, an optical imaging system to correct for phase front tilt and a FROG device to measure and optimize the... Phase II Task Summary . . . . . . . . . . . . . . . . . . . . . 4 D.1 Module I: High-Energy Electron Accelerator . . . . . . 4 D.2 Module II: High-Energy...During Phase I of the HRS program, the team from the University of Ne- braska, Lincoln (UNL) made use of the unique capabilities of their high-power

Control voltage and power fluctuations when connecting wind farms

NASA Astrophysics Data System (ADS)

Berinde, Ioan; Bǎlan, Horia; Oros Pop, Teodora Susana

2015-12-01

Voltage, frequency, active power and reactive power are very important parameters in terms of power quality. These parameters are followed when connecting any power plant, the more the connection of wind farms. Connecting wind farms to the electricity system must not cause interference outside the limits set by regulations. Modern solutions for fast and automatic voltage control and power fluctuations using electronic control systems of reactive power flows. FACTS (Flexible Alternating Current Transmision System) systems, established on the basis of power electronic circuits ensure control of electrical status quantities to achieve the necessary transfer of power to the power grid. FACTS devices can quickly control parameters and sizes of state power lines, such as impedance line voltages and phase angles of the voltages of the two ends of the line. Their use can lead to improvement in power system operation by increasing the transmission capacity of power lines, power flow control lines, improved static and transient stability reserve.

Silicon-On-Insulator (SOI) Devices and Mixed-Signal Circuits for Extreme Temperature Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Electronic systems in planetary exploration missions and in aerospace applications are expected to encounter extreme temperatures and wide thermal swings in their operational environments. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of the missions. Electronic parts based on silicon-on-insulator (SOI) technology are known, based on device structure, to provide faster switching, consume less power, and offer better radiation-tolerance compared to their silicon counterparts. They also exhibit reduced current leakage and are often tailored for high temperature operation. However, little is known about their performance at low temperature. The performance of several SOI devices and mixed-signal circuits was determined under extreme temperatures, cold-restart, and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these devices for use in space exploration missions under extreme temperatures. The experimental results obtained on selected SOI devices are presented and discussed in this paper.

Low-power resistive random access memory by confining the formation of conducting filaments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yi-Jen; Lee, Si-Chen, E-mail: sclee@ntu.edu.tw; Shen, Tzu-Hsien

2016-06-15

Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiO{sub x}/silver nanoparticles/TiO{sub x}/AlTiO{sub x}, fabricated between the fluorine-doped tin oxide bottom electrode and the indium tin oxide top electrode is demonstrated. The device exhibits excellent memory performances, such as low operation voltage (<±1 V), low operation power, small variation in resistance, reliable data retention, and a large memory window. The current-voltage measurement shows that the conducting mechanism in the device at the high resistancemore » state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies. The bottom AlTiO{sub x} layer in the device structure limits the formation of conducting filaments; therefore, the current and power consumption of device operation are significantly reduced.« less

Field Effect Transistor Behavior in Electrospun Polyaniline/Polyethylene Oxide Nanofibers

NASA Technical Reports Server (NTRS)

Miranda, Felix A.; Theofylaktos, Noulle; Robinson, Daryl C.; Mueller, Carl H.; Pinto, Nicholas J.

2004-01-01

Novel translators and logic devices based on nanotechnology concepts are under intense development. The potential for ultra-low power circuitry makes nanotechnology attractive for applications such as digital electronics and sensors. Furthermore, the ability to form devices on flexible substrates expands the range of applications where electronic circuitry can be introduced. For NASA, nonotechndogy offers opportunities for increased onboard data processing and thus autonomous decision-making ability, ad novel sensors that detect and respond to external stimuli with few oversight requirements. The goat of this work is to demonstrate transistor behavior in polyaniline/ polyethylene oxide nanofibers, thus creating a foundation for future logic devices.

High power density microbial fuel cell with flexible 3D graphene-nickel foam as anode

NASA Astrophysics Data System (ADS)

Wang, Hanyu; Wang, Gongming; Ling, Yichuan; Qian, Fang; Song, Yang; Lu, Xihong; Chen, Shaowei; Tong, Yexiang; Li, Yat

2013-10-01

The structure and electrical conductivity of anode play a significant role in the power generation of microbial fuel cells (MFCs). In this study, we developed a three-dimensional (3D) reduced graphene oxide-nickel (denoted as rGO-Ni) foam as an anode for MFC through controlled deposition of rGO sheets onto the nickel foam substrate. The loading amount of rGO sheets and electrode surface area can be controlled by the number of rGO loading cycles. 3D rGO-Ni foam anode provides not only a large accessible surface area for microbial colonization and electron mediators, but also a uniform macro-porous scaffold for effective mass diffusion of the culture medium. Significantly, at a steady state of the power generation, the MFC device with flexible rGO-Ni electrodes produced an optimal volumetric power density of 661 W m-3 calculated based on the volume of anode material, or 27 W m-3 based on the volume of the anode chamber. These values are substantially higher than that of plain nickel foam, and other conventional carbon based electrodes (e.g., carbon cloth, carbon felt, and carbon paper) measured in the same conditions. To our knowledge, this is the highest volumetric power density reported for mL-scale MFC device with a pure strain of Shewanella oneidensis MR-1. We also demonstrated that the MFC device can be operated effectively in a batch-mode at least for a week. These new 3D rGO-Ni electrodes show great promise for improving the power generation of MFC devices.The structure and electrical conductivity of anode play a significant role in the power generation of microbial fuel cells (MFCs). In this study, we developed a three-dimensional (3D) reduced graphene oxide-nickel (denoted as rGO-Ni) foam as an anode for MFC through controlled deposition of rGO sheets onto the nickel foam substrate. The loading amount of rGO sheets and electrode surface area can be controlled by the number of rGO loading cycles. 3D rGO-Ni foam anode provides not only a large accessible surface area for microbial colonization and electron mediators, but also a uniform macro-porous scaffold for effective mass diffusion of the culture medium. Significantly, at a steady state of the power generation, the MFC device with flexible rGO-Ni electrodes produced an optimal volumetric power density of 661 W m-3 calculated based on the volume of anode material, or 27 W m-3 based on the volume of the anode chamber. These values are substantially higher than that of plain nickel foam, and other conventional carbon based electrodes (e.g., carbon cloth, carbon felt, and carbon paper) measured in the same conditions. To our knowledge, this is the highest volumetric power density reported for mL-scale MFC device with a pure strain of Shewanella oneidensis MR-1. We also demonstrated that the MFC device can be operated effectively in a batch-mode at least for a week. These new 3D rGO-Ni electrodes show great promise for improving the power generation of MFC devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr03487a

Innovative, wearable snap connector technology for improved device networking in electronic garments

NASA Astrophysics Data System (ADS)

Kostrzewski, Andrew A.; Lee, Kang S.; Gans, Eric; Winterhalter, Carole A.; Jannson, Tomasz P.

2007-04-01

This paper discusses Physical Optics Corporation's (POC) wearable snap connector technology that provides for the transfer of data and power throughout an electronic garment (e-garment). These connectors resemble a standard garment button and can be mated blindly with only one hand. Fully compatible with military clothing, their application allows for the networking of multiple electronic devices and an intuitive method for adding/removing existing components from the system. The attached flexible cabling also permits the rugged snap connectors to be fed throughout the standard webbing found in military garments permitting placement in any location within the uniform. Variations of the snap electronics/geometry allow for integration with USB 2.0 devices, RF antennas, and are capable of transferring high bandwidth data streams such as the 221 Mbps required for VGA video. With the trend towards providing military officers with numerous electronic devices (i.e., heads up displays (HMD), GPS receiver, PDA, etc), POC's snap connector technology will greatly improve cable management resulting in a less cumbersome uniform. In addition, with electronic garments gaining widespread adoption in the commercial marketplace, POC's technology is finding applications in such areas as sporting good manufacturers and video game technology.

Stoichiometric control of lead chalcogenide nanocrystal solids to enhance their electronic and optoelectronic device performance.

PubMed

Oh, Soong Ju; Berry, Nathaniel E; Choi, Ji-Hyuk; Gaulding, E Ashley; Paik, Taejong; Hong, Sung-Hoon; Murray, Christopher B; Kagan, Cherie R

2013-03-26

We investigate the effects of stoichiometric imbalance on the electronic properties of lead chalcogenide nanocrystal films by introducing excess lead (Pb) or selenium (Se) through thermal evaporation. Hall-effect and capacitance-voltage measurements show that the carrier type, concentration, and Fermi level in nanocrystal solids may be precisely controlled through their stoichiometry. By manipulating only the stoichiometry of the nanocrystal solids, we engineer the characteristics of electronic and optoelectronic devices. Lead chalcogenide nanocrystal field-effect transistors (FETs) are fabricated at room temperature to form ambipolar, unipolar n-type, and unipolar p-type semiconducting channels as-prepared and with excess Pb and Se, respectively. Introducing excess Pb forms nanocrystal FETs with electron mobilities of 10 cm(2)/(V s), which is an order of magnitude higher than previously reported in lead chalcogenide nanocrystal devices. Adding excess Se to semiconductor nanocrystal solids in PbSe Schottky solar cells enhances the power conversion efficiency.

Ultra high vacuum test setup for electron gun

NASA Astrophysics Data System (ADS)

Pandiyar, M. L.; Prasad, M.; Jain, S. K.; Kumar, R.; Hannurkar, P. R.

2008-05-01

Ultra High Vacuum (UHV) test setup for electron gun testing has been developed. The development of next generation light sources and accelerators require development of klystron as a radio frequency power source, and in turn electron gun. This UHV electron gun test setup can be used to test the electron guns ranging from high average current, quasi-continuous wave to high peak current, single pulse etc. An electron gun has been designed, fabricated, assembled and tested for insulation up to 80 kV under the programme to develop high power klystron for future accelerators. Further testing includes the electron emission parameters characterization of the cathode, as it determines the development of a reliable and efficient electron gun with high electron emission current and high life time as well. This needs a clean ultra high vacuum to study these parameters particularly at high emission current. The cathode emission current, work function and vapour pressure of cathode surface material at high temperature studies will further help in design and development of high power electron gun The UHV electron gun test setup consists of Turbo Molecular Pump (TMP), Sputter Ion Pump (SIP), pressure gauge, high voltage and cathode power supplies, current measurement device, solenoid magnet and its power supply, residual gas analyser etc. The ultimate vacuum less than 2×10-9 mbar was achieved. This paper describes the UHV test setup for electron gun testing.

Characterization of MgB2 Superconducting Hot Electron Bolometers

NASA Technical Reports Server (NTRS)

Cunnane, D.; Kawamura, J. H.; Wolak, M. A.; Acharya, N.; Tan, T.; Xi, X. X.; Karasik, B. S.

2014-01-01

Hot-Electron Bolometer (HEB) mixers have proven to be the best tool for high-resolution spectroscopy at the Terahertz frequencies. However, the current state of the art NbN mixers suffer from a small intermediate frequency (IF) bandwidth as well as a low operating temperature. MgB2 is a promising material for HEB mixer technology in view of its high critical temperature and fast thermal relaxation allowing for a large IF bandwidth. In this work, we have fabricated and characterized thin-film (approximately 15 nanometers) MgB2-based spiral antenna-coupled HEB mixers on SiC substrate. We achieved the IF bandwidth greater than 8 gigahertz at 25 degrees Kelvin and the device noise temperature less than 4000 degrees Kelvin at 9 degrees Kelvin using a 600 gigahertz source. Using temperature dependencies of the radiation power dissipated in the device we have identified the optical loss in the integrated microantenna responsible as a cause of the limited sensitivity of the current mixer devices. From the analysis of the current-voltage (IV) characteristics, we have derived the effective thermal conductance of the mixer device and estimated the required local oscillator power in an optimized device to be approximately 1 microwatts.

Lithium battery fires: implications for air medical transport.

PubMed

Thomas, Frank; Mills, Gordon; Howe, Robert; Zobell, Jim

2012-01-01

Lithium-ion batteries provide more power and longer life to electronic medical devices, with the benefits of reduced size and weight. It is no wonder medical device manufacturers are designing these batteries into their products. Lithium batteries are found in cell phones, electronic tablets, computers, and portable medical devices such as ventilators, intravenous pumps, pacemakers, incubators, and ventricular assist devices. Yet, if improperly handled, lithium batteries can pose a serious fire threat to air medical transport personnel. Specifically, this article discusses how lithium-ion batteries work, the fire danger associated with them, preventive measures to reduce the likelihood of a lithium battery fire, and emergency procedures that should be performed in that event. Copyright © 2012 Air Medical Journal Associates. Published by Elsevier Inc. All rights reserved.

The Art of Electronics

NASA Astrophysics Data System (ADS)

Horowitz, Paul; Hill, Winfield

2015-04-01

1. Foundations; 2. Bipolar transistors; 3. Field effect transistors; 4. Operational amplifiers; 5. Precision circuits; 6. Filters; 7. Oscillators and timers; 8. Low noise techniques and transimpedance; 9. Power regulation; 10. Digital electronics; 11. Programmable logic devices; 12. Logical interfacing; 13. Digital meets analog; 14. Computers, controllers, and data links; 15. Microcontrollers.

Traveling-Wave Tubes

NASA Technical Reports Server (NTRS)

Kory, Carol L.

1998-01-01

The traveling-wave tube (TWT) is a vacuum device invented in the early 1940's used for amplification at microwave frequencies. Amplification is attained by surrendering kinetic energy from an electron beam to a radio frequency (RF) electromagnetic wave. The demand for vacuum devices has been decreased largely by the advent of solid-state devices. However, although solid state devices have replaced vacuum devices in many areas, there are still many applications such as radar, electronic countermeasures and satellite communications, that require operating characteristics such as high power (Watts to Megawatts), high frequency (below 1 GHz to over 100 GHz) and large bandwidth that only vacuum devices can provide. Vacuum devices are also deemed irreplaceable in the music industry where musicians treasure their tube-based amplifiers claiming that the solid-state and digital counterparts could never provide the same "warmth" (3). The term traveling-wave tube includes both fast-wave and slow-wave devices. This article will concentrate on slow-wave devices as the vast majority of TWTs in operation fall into this category.

Challenges facing lithium batteries and electrical double-layer capacitors.

PubMed

Choi, Nam-Soon; Chen, Zonghai; Freunberger, Stefan A; Ji, Xiulei; Sun, Yang-Kook; Amine, Khalil; Yushin, Gleb; Nazar, Linda F; Cho, Jaephil; Bruce, Peter G

2012-10-01

Energy-storage technologies, including electrical double-layer capacitors and rechargeable batteries, have attracted significant attention for applications in portable electronic devices, electric vehicles, bulk electricity storage at power stations, and "load leveling" of renewable sources, such as solar energy and wind power. Transforming lithium batteries and electric double-layer capacitors requires a step change in the science underpinning these devices, including the discovery of new materials, new electrochemistry, and an increased understanding of the processes on which the devices depend. The Review will consider some of the current scientific issues underpinning lithium batteries and electric double-layer capacitors. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Touch NMR: An NMR Data Processing Application for the iPad

ERIC Educational Resources Information Center

Li, Qiyue; Chen, Zhiwei; Yan, Zhiping; Wang, Cheng; Chen, Zhong

2014-01-01

Nuclear magnetic resonance (NMR) spectroscopy has become one of the most powerful technologies to aid research in numerous scientific disciplines. With the development of consumer electronics, mobile devices have played increasingly important roles in our daily life. However, there is currently no application available for mobile devices able to…

GaAs VLSI for aerospace electronics

NASA Technical Reports Server (NTRS)

Larue, G.; Chan, P.

1990-01-01

Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

Three-dimensional nano-heterojunction networks: a highly performing structure for fast visible-blind UV photodetectors.

PubMed

Nasiri, Noushin; Bo, Renheng; Fu, Lan; Tricoli, Antonio

2017-02-02

Visible-blind ultraviolet photodetectors are a promising emerging technology for the development of wide bandgap optoelectronic devices with greatly reduced power consumption and size requirements. A standing challenge is to improve the slow response time of these nanostructured devices. Here, we present a three-dimensional nanoscale heterojunction architecture for fast-responsive visible-blind UV photodetectors. The device layout consists of p-type NiO clusters densely packed on the surface of an ultraporous network of electron-depleted n-type ZnO nanoparticles. This 3D structure can detect very low UV light densities while operating with a near-zero power consumption of ca. 4 × 10 -11 watts and a low bias of 0.2 mV. Most notably, heterojunction formation decreases the device rise and decay times by 26 and 20 times, respectively. These drastic enhancements in photoresponse dynamics are attributed to the stronger surface band bending and improved electron-hole separation of the nanoscale NiO/ZnO interface. These findings demonstrate a superior structural design and a simple, low-cost CMOS-compatible process for the engineering of high-performance wearable photodetectors.

Metallic Junction Thermoelectric Device Simulations

NASA Technical Reports Server (NTRS)

Duzik, Adam J.; Choi, Sang H.

2017-01-01

Thermoelectric junctions made of semiconductors have existed in radioisotope thermoelectric generators (RTG) for deep space missions, but are currently being adapted for terrestrial energy harvesting. Unfortunately, these devices are inefficient, operating at only 7% efficiency. This low efficiency has driven efforts to make high-figure-of-merit thermoelectric devices, which require a high electrical conductivity but a low thermal conductivity, a combination that is difficult to achieve. Lowered thermal conductivity has increased efficiency, but at the cost of power output. An alternative setup is to use metallic junctions rather than semiconductors as thermoelectric devices. Metals have orders of magnitude more electrons and electronic conductivities higher than semiconductors, but thermal conductivity is higher as well. To evaluate the viability of metallic junction thermoelectrics, a two dimensional heat transfer MATLAB simulation was constructed to calculate efficiency and power output. High Seebeck coefficient alloys, Chromel (90%Ni-10%Cr) and Constantan (55%Cu-45%Ni), produced efficiencies of around 20-30%. Parameters such as the number of layers of junctions, lateral junction density, and junction sizes for both series- and parallel-connected junctions were explored.

Wide-Temperature Electronics for Thermal Control of Nanosats

NASA Technical Reports Server (NTRS)

Dickman, John Ellis; Gerber, Scott

2000-01-01

This document represents a presentation which examines the wide and low-temperature electronics required for NanoSatellites. In the past, larger spacecraft used Radioisotope Heating Units (RHU's). The advantage of the use of these electronics is that they could eliminate or reduce the requirement for RHU's, reduce system weight and simplify spacecraft design by eliminating containment/support structures for RHU's. The Glenn Research Center's Wide/Low Temperature Power Electronics Program supports the development of power systems capable of reliable, efficient operation over wide and low temperature ranges. Included charts review the successes and failures of various electronic devices, the IRF541 HEXFET, The NE76118n-Channel GaAS MESFET, the Lithium Carbon Monofluoride Primary Battery, and a COTS DC-DC converter. The preliminary result of wide/low temperature testing of CTS and custom parts and power circuit indicate that through careful selection of components and technologies it is possible to design and build power circuits which operate from room temperature to near 100K.

Toward Wearable Self-Charging Power Systems: The Integration of Energy-Harvesting and Storage Devices.

PubMed

Pu, Xiong; Hu, Weiguo; Wang, Zhong Lin

2018-01-01

One major challenge for wearable electronics is that the state-of-the-art batteries are inadequate to provide sufficient energy for long-term operations, leading to inconvenient battery replacement or frequent recharging. Other than the pursuit of high energy density of secondary batteries, an alternative approach recently drawing intensive attention from the research community, is to integrate energy-generation and energy-storage devices into self-charging power systems (SCPSs), so that the scavenged energy can be simultaneously stored for sustainable power supply. This paper reviews recent developments in SCPSs with the integration of various energy-harvesting devices (including piezoelectric nanogenerators, triboelectric nanogenerators, solar cells, and thermoelectric nanogenerators) and energy-storage devices, such as batteries and supercapacitors. SCPSs with multiple energy-harvesting devices are also included. Emphasis is placed on integrated flexible or wearable SCPSs. Remaining challenges and perspectives are also examined to suggest how to bring the appealing SCPSs into practical applications in the near future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Assessment of new-generation high-power electronic nicotine delivery system as thermal aerosol generation device for inhaled bronchodilators.

PubMed

Pourchez, Jérémie; de Oliveira, Fabien; Perinel-Ragey, Sophie; Basset, Thierry; Vergnon, Jean-Michel; Prévôt, Nathalie

2017-02-25

A need remains for alternative devices for aerosol drug delivery that are low cost, convenient and easy to use for the patient, but also capable of producing small-sized aerosol particles. This study investigated the potential of recent high power electronic nicotine delivery systems (ENDS) as aerosol generation devices for inhaled bronchodilators. The particle size distribution was measured using a cascade impactor. The delivery of terbutaline sulfate, a current bronchodilator used for asthma or COPD therapy by inhalation, was studied. This drug was quantified by liquid chromatography coupled with tandem mass spectrometry. The particle size distribution in terms of mass frequency (in two ways, gravimetrically and quantitatively through drug assay on each stage) and the terbutaline sulfate concentration in the aerosol were elucidated. The mass median aerodynamic diameter (MMAD) and the drug delivery rose when the power level increased, to reach 5.6±0.4μg/puff with a MMAD of 0.78±0.03μm at 25W. New generation high-power ENDS are very efficient to generate carrier-droplets in the submicron range containing drug molecules with a constant drug concentration whatever the size-fractions. ENDS appear to be highly patient-adaptive. Copyright © 2017 Elsevier B.V. All rights reserved.

Negative hydrogen ions in a linear helicon plasma device

NASA Astrophysics Data System (ADS)

Corr, Cormac; Santoso, Jesse; Samuell, Cameron; Willett, Hannah; Manoharan, Rounak; O'Byrne, Sean

2015-09-01

Low-pressure negative ion sources are of crucial importance to the development of high-energy (>1 MeV) neutral beam injection systems for the ITER experimental tokamak device. Due to their high power coupling efficiency and high plasma densities, helicon devices may be able to reduce power requirements and potentially remove the need for caesium. In helicon sources, the RF power can be coupled efficiently into the plasma and it has been previously observed that the application of a small magnetic field can lead to a significant increase in the plasma density. In this work, we investigate negative ion dynamics in a high-power (20 kW) helicon plasma source. The negative ion fraction is measured by probe-based laser photodetachment, electron density and temperature are determined by a Langmuir probe and tuneable diode laser absorption spectroscopy is used to determine the density of the H(n = 2) excited atomic state and the gas temperature. The negative ion density and excited atomic hydrogen density display a maximum at a low applied magnetic field of 3 mT, while the electron temperature displays a minimum. The negative ion density can be increased by a factor of 8 with the application of the magnetic field. Spatial and temporal measurements will also be presented. The Australian Research Grants Council is acknowledged for funding.

Solar cell system having alternating current output

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1980-01-01

A monolithic multijunction solar cell was modified by fabricating an integrated circuit inverter on the back of the cell to produce a device capable of generating an alternating current output. In another embodiment, integrated curcuit power conditioning electronics was incorporated in a module containing a solar cell power supply.

A novel thermal acoustic device based on porous graphene

NASA Astrophysics Data System (ADS)

Tao, Lu-Qi; Liu, Ying; Tian, He; Ju, Zhen-Yi; Xie, Qian-Yi; Yang, Yi; Ren, Tian-Ling

2016-01-01

A thermal acoustic (TA) device was fabricated by laser scribing technology. Polyimide (PI) can be converted into patterned porous graphene (PG) by laser's irradiation in one step. The sound pressure level (SPL) of such TA device is related to laser power. The theoretical model of TA effect was established to analyze the relationship between the SPL and laser power. The theoretical results are in good agreement with experiment results. It was found that PG has a flat frequency response in the range of 5-20 kHz. This novel TA device has the advantages of one-step procedure, high flexibility, no mechanical vibration, low cost and so on. It can open wide applications in speakers, multimedia, medical, earphones, consumer electronics and many other aspects.

Use of lithium batteries in biomedical devices. Technical report No. 8, July 1988-June 1989

DOE Office of Scientific and Technical Information (OSTI.GOV)

Owens, B.B.

1989-06-15

Lithium batteries have played an important role in the development of useful implantable biomedical devices. The cardiac pacemaker is the most well known of these devices and high-energy, long-life reliable lithium primary cells have effectively replaced all of the alkaline cells previously used in these electronic systems. The recent development of higher-power devices such as drug pumps and cardiac defibrillators require the use of batteries with higher energy and power capabilities. High rate rechargeable batteries that can be configured as flat prismatic cells would be especially useful in some of these new applications. Lithium polymer electrolyte-batteries may find a usefulmore » role in these new areas.« less

High-power microwave LDMOS transistors for wireless data transmission technologies (Review)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuznetsov, E. V., E-mail: E.Kouzntsov@tcen.ru; Shemyakin, A. V.

The fields of the application, structure, fabrication, and packaging technology of high-power microwave LDMOS transistors and the main advantages of these devices were analyzed. Basic physical parameters and some technology factors were matched for optimum device operation. Solid-state microwave electronics has been actively developed for the last 10-15 years. Simultaneously with improvement of old devices, new devices and structures are actively being adopted and developed and new semiconductor materials are being commercialized. Microwave LDMOS technology is in demand in such fields as avionics, civil and military radars, repeaters, base stations of cellular communication systems, television and broadcasting transmitters, and transceiversmore » for high-speed wireless computer networks (promising Wi-Fi and Wi-Max standards).« less

History and modern applications of nano-composite materials carrying GA/cm2 current density due to a Bose-Einstein Condensate at room temperature produced by Focused Electron Beam Induced Processing for many extraordinary novel technical applications

NASA Astrophysics Data System (ADS)

Koops, Hans W. P.

2015-12-01

The discovery of Focused Electron Beam Induced Processing and early applications of this technology led to the possible use of a novel nanogranular material “Koops-GranMat®” using Pt/C and Au/C material. which carries at room temperature a current density > 50 times the current density which high TC superconductors can carry. The explanation for the characteristics of this novel material is given. This fact allows producing novel products for many applications using Dual Beam system having a gas supply and X.Y.T stream data programming and not using GDSII layout pattern control software. Novel products are possible for energy transportation. -distribution.-switching, photon-detection above 65 meV energy for very efficient energy harvesting, for bright field emission electron sources used for vacuum electronic devices like amplifiers for HF electronics, micro-tubes, 30 GHz to 6 THz switching amplifiers with signal to noise ratio >10(!), THz power sources up to 1 Watt, in combination with miniaturized vacuum pumps, vacuum gauges, IR to THz detectors, EUV- and X-Ray sources. Since focusing electron beam induced deposition works also at low energy, selfcloning multibeam-production machines for field emitter lamps, displays, multi-beam - lithography, - imaging, and - inspection, energy harvesting, and power distribution with switches controlling field-emitter arrays for KA of currents but with < 100 V switching voltage are possible. Finally the replacement of HTC superconductors and its applications by the Koops-GranMat® having Koops-Pairs at room temperature will allow the investigation devices similar to Josephson Junctions and its applications now called QUIDART (Quantum interference devices at Room Temperature). All these possibilities will support a revolution in the optical, electric, power, and electronic technology.

Precision Strike Annual Programs Review

DTIC Science & Technology

2009-03-11

Deceleration and Stabilization Subsystem Squib Fire Unit Thermal Battery Electronic Safe and Arm Device Air Data Sensor Main ChargeControl Actuator Power ...platforms, and ground teams. • Powered , maneuverable, small, lightweight, accurate and lethal, with reduced risk of collateral damage. Raytheon Missile...requirements evolve, so will capability • Builds on powerful infrastructure • “Color of Money” timing is very different Traditional Approach Traditional IOC

Technical options for high average power free electron milimeter-wave and laser devices

NASA Technical Reports Server (NTRS)

Swingle, James C.

1989-01-01

Many of the potential space power beaming applications require the generation of directed energy beams with respectable amounts of average power (MWs). A tutorial summary is provided here on recent advances in the laboratory aimed at producing direct conversion of electrical energy to electromagnetic radiation over a wide spectral regime from microwaves to the ultraviolet.

Alternatives for joining Si wafers to strain-accommodating Cu for high-power electronics

NASA Astrophysics Data System (ADS)

Faust, Nicholas; Messler, Robert W.; Khatri, Subhash

2001-10-01

Differences in the coefficients of thermal expansion (CTE) between silicon wafers and underlying copper electrodes have led to the use of purely mechanical dry pressure contacts for primary electrical and thermal connections in high-power solid-state electronic devices. These contacts are limited by their ability to dissipate I2R heat from within the device and by their thermal fatigue life. To increase heat dissipation and effectively deal with the CTE mismatch, metallurgical bonding of the silicon to a specially-structured, strain-accommodating copper electrode has been proposed. This study was intended to seek alternative methods for and demonstrate the feasibility of bonding Si to structured Cu in high-power solid-state devices. Three different but fundamentally related fluxless approaches identified and preliminarily assessed were: (1) conventional Sn-Ag eutectic solder; (2) a new, commercially-available active solder based on the Sn-Ag eutectic; and (3) solid-liquid interdiffusion bonding using the Au-In system. Metallurgical joints were made with varying quality levels (according to nonde-structive ultrasonic C-scan mapping, SEM, and electron microprobe) using each approach. Mechanical shear testing resulted in cohesive failure within the Si or the filler alloys. The best approach, in which eutectic Sn-Ag solder in pre-alloyed foil form was employed on Si and Cu substrates metallized (from the substrate outward) with Ti, Ni and Au, exhibited joint thermal conduction 74% better than dry pressure contacts.

Dual-functional on-chip AlGaAs/GaAs Schottky diode for RF power detection and low-power rectenna applications.

PubMed

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Hollow - cathode electrode for high-power, high-pressure discharge devices

DOEpatents

Chang, Jim J.; Alger, Terry W.

1995-01-01

Several different cold cathode configurations for a gas discharge device each having a plurality of grooves of selected spacing, depth and width to improve the emission of electrons in a gas discharge device. Each of the cold cathode configurations can be machined from a single piece of a selected material. Several of the configurations can be assembled with individual elements which is easily seen from the various figures.

Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

DOEpatents

Degtiarenko, Pavel V [Williamsburg, VA; Popov, Vladimir E [Newport News, VA

2011-03-22

A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

NASA Technical Reports Server (NTRS)

Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George

2004-01-01

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Electrothermal energy conversion using electron gas volumetric change inside semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yazawa, K.; Shakouri, A.

2016-07-25

We propose and analyze an electrothermal energy converter using volumetric changes in non-equilibrium electron gas inside semiconductors. The geometric concentration of electron gas under an electric field increases the effective pressure of the electrons, and then a barrier filters out cold electrons, acting like a valve. Nano- and micro-scale features enable hot electrons to arrive at the contact in a short enough time to avoid thermalization with the lattice. Key length and time scales, preliminary device geometry, and anticipated efficiency are estimated for electronic analogs of Otto and Brayton power generators and Joule-Thomson micro refrigerators on a chip. The powermore » generators convert the energy of incident photons from the heat source to electrical current, and the refrigerator can reduce the temperature of electrons in a semiconductor device. The analytic calculations show that a large energy conversion efficiency or coefficient of performance may be possible.« less

Circuit with a Switch for Charging a Battery in a Battery Capacitor Circuit

NASA Technical Reports Server (NTRS)

Stuart, Thomas A. (Inventor); Ashtiani, Cyrus N. (Inventor)

2008-01-01

A circuit for charging a battery combined with a capacitor includes a power supply adapted to be connected to the capacitor, and the battery. The circuit includes an electronic switch connected to the power supply. The electronic switch is responsive to switch between a conducting state to allow current and a non-conducting state to prevent current flow. The circuit includes a control device connected to the switch and is operable to generate a control signal to continuously switch the electronic switch between the conducting and non-conducting states to charge the battery.

Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure

NASA Technical Reports Server (NTRS)

Celaya, Jose R.; Saxena, Abhinav; Wysocki, Philip; Saha, Sankalita; Goebel, Kai

2010-01-01

This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect transistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage. In situ measurements of key electrical and thermal parameters are collected throughout the aging process and further used for analysis and computation of the on-resistance parameter. Experimental results show that the devices experience die-attach damage and that the on-resistance captures the degradation process in such a way that it could be used for the development of prognostics algorithms (data-driven or physics-based).

Additive Manufacturing of a Microbial Fuel Cell—A detailed study

PubMed Central

Calignano, Flaviana; Tommasi, Tonia; Manfredi, Diego; Chiolerio, Alessandro

2015-01-01

In contemporary society we observe an everlasting permeation of electron devices, smartphones, portable computing tools. The tiniest living organisms on Earth could become the key to address this challenge: energy generation by bacterial processes from renewable stocks/waste through devices such as microbial fuel cells (MFCs). However, the application of this solution was limited by a moderately low efficiency. We explored the limits, if any, of additive manufacturing (AM) technology to fabricate a fully AM-based powering device, exploiting low density, open porosities able to host the microbes, systems easy to fuel continuously and to run safely. We obtained an optimal energy recovery close to 3 kWh m−3 per day that can power sensors and low-power appliances, allowing data processing and transmission from remote/harsh environments. PMID:26611142

Additive Manufacturing of a Microbial Fuel Cell—A detailed study

NASA Astrophysics Data System (ADS)

Calignano, Flaviana; Tommasi, Tonia; Manfredi, Diego; Chiolerio, Alessandro

2015-11-01

In contemporary society we observe an everlasting permeation of electron devices, smartphones, portable computing tools. The tiniest living organisms on Earth could become the key to address this challenge: energy generation by bacterial processes from renewable stocks/waste through devices such as microbial fuel cells (MFCs). However, the application of this solution was limited by a moderately low efficiency. We explored the limits, if any, of additive manufacturing (AM) technology to fabricate a fully AM-based powering device, exploiting low density, open porosities able to host the microbes, systems easy to fuel continuously and to run safely. We obtained an optimal energy recovery close to 3 kWh m-3 per day that can power sensors and low-power appliances, allowing data processing and transmission from remote/harsh environments.

Power optimization of ultrasonic friction-modulation tactile interfaces.

PubMed

Wiertlewski, Michael; Colgate, J Edward

2015-01-01

Ultrasonic friction-modulation devices provide rich tactile sensation on flat surfaces and have the potential to restore tangibility to touchscreens. To date, their adoption into consumer electronics has been in part limited by relatively high power consumption, incompatible with the requirements of battery-powered devices. This paper introduces a method that optimizes the energy efficiency and performance of this class of devices. It considers optimal energy transfer to the impedance provided by the finger interacting with the surface. Constitutive equations are determined from the mode shape of the interface and the piezoelectric coupling of the actuator. The optimization procedure employs a lumped parameter model to simplify the treatment of the problem. Examples and an experimental study show the evolution of the optimal design as a function of the impedance of the finger.

US Army Research Laboratory power sources R and D programs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Christopher, H.A.; Gilman, S.; Hamlen, R.P.

1993-05-01

The development and application of new electronic technologies over the recent past has resulted in a major evolution of new electronic battlefield equipment. The need for lighter-weight and more cost effective power sources with higher power/energy density capability is critical to the successful development and deployment of these new, high performance battlefield devices. The current status and thrust of the Army Research Laboratory's (ARL's) battery and fuel cell R and D programs that support these new and emerging applications will be reviewed. Major technical barriers will be identified along with the corresponding proposed approaches to solving these anticipated problems.

Characterization and reliability of aluminum gallium nitride/gallium nitride high electron mobility transistors

NASA Astrophysics Data System (ADS)

Douglas, Erica Ann

Compound semiconductor devices, particularly those based on GaN, have found significant use in military and civilian systems for both microwave and optoelectronic applications. Future uses in ultra-high power radar systems will require the use of GaN transistors operated at very high voltages, currents and temperatures. GaN-based high electron mobility transistors (HEMTs) have proven power handling capability that overshadows all other wide band gap semiconductor devices for high frequency and high-power applications. Little conclusive research has been reported in order to determine the dominating degradation mechanisms of the devices that result in failure under standard operating conditions in the field. Therefore, it is imperative that further reliability testing be carried out to determine the failure mechanisms present in GaN HEMTs in order to improve device performance, and thus further the ability for future technologies to be developed. In order to obtain a better understanding of the true reliability of AlGaN/GaN HEMTs and determine the MTTF under standard operating conditions, it is crucial to investigate the interaction effects between thermal and electrical degradation. This research spans device characterization, device reliability, and device simulation in order to obtain an all-encompassing picture of the device physics. Initially, finite element thermal simulations were performed to investigate the effect of device design on self-heating under high power operation. This was then followed by a study of reliability of HEMTs and other tests structures during high power dc operation. Test structures without Schottky contacts showed high stability as compared to HEMTs, indicating that degradation of the gate is the reason for permanent device degradation. High reverse bias of the gate has been shown to induce the inverse piezoelectric effect, resulting in a sharp increase in gate leakage current due to crack formation. The introduction of elevated temperatures during high reverse gate bias indicated that device failure is due to the breakdown of an unintentional gate oxide. RF stress of AlGaN/GaN HEMTs showed comparable critical voltage breakdown regime as that of similar devices stressed under dc conditions. Though RF device characteristics showed stability up to a drain bias of 20 V, Schottky diode characteristics degraded substantially at all voltages investigated. Results from both dc and RF stress conditions, under several bias regimes, confirm that the primary root for stress induced degradation was due to the Schottky contact. (Full text of this dissertation may be available via the University of Florida Libraries web site. Please check http://www.uflib.ufl.edu/etd.html)

Microfabricated Bulk Piezoelectric Transformers

NASA Astrophysics Data System (ADS)

Barham, Oliver M.

Piezoelectric voltage transformers (PTs) can be used to transform an input voltage into a different, required output voltage needed in electronic and electro- mechanical systems, among other varied uses. On the macro scale, they have been commercialized in electronics powering consumer laptop liquid crystal displays, and compete with an older, more prevalent technology, inductive electromagnetic volt- age transformers (EMTs). The present work investigates PTs on smaller size scales that are currently in the academic research sphere, with an eye towards applications including micro-robotics and other small-scale electronic and electromechanical sys- tems. PTs and EMTs are compared on the basis of power and energy density, with PTs trending towards higher values of power and energy density, comparatively, indicating their suitability for small-scale systems. Among PT topologies, bulk disc-type PTs, operating in their fundamental radial extension mode, and free-free beam PTs, operating in their fundamental length extensional mode, are good can- didates for microfabrication and are considered here. Analytical modeling based on the Extended Hamilton Method is used to predict device performance and integrate mechanical tethering as a boundary condition. This model differs from previous PT models in that the electric enthalpy is used to derive constituent equations of motion with Hamilton's Method, and therefore this approach is also more generally applica- ble to other piezoelectric systems outside of the present work. Prototype devices are microfabricated using a two mask process consisting of traditional photolithography combined with micropowder blasting, and are tested with various output electri- cal loads. 4mm diameter tethered disc PTs on the order of .002cm. 3 , two orders smaller than the bulk PT literature, had the followingperformance: a prototype with electrode area ratio (input area / output area) = 1 had peak gain of 2.3 (+/- 0.1), efficiency of 33 (+/- 0.1)% and output power density of 51.3 (+/- 4.0)W cm. -3 (for output power of80 (+/- 6)mW) at 1M? load, for an input voltage range of 3V-6V (+/- one standard deviation). The gain results are similar to those of several much larger bulk devices in the literature, but the efficiencies of the present devices are lower. Rectangular topology, free-free beam devices were also microfabricated across 3 or- ders of scale by volume, with the smallest device on the order of .00002cm. 3 . These devices exhibited higher quality factorsand efficiencies, in some cases, compared to circular devices, but lower peak gain (by roughly 1/2 ). Limitations of the microfab- rication process are determined, and future work is proposed. Overall, the devices fabricated in the present work show promise for integration into small-scale engi- neered systems, but improvements can be made in efficiency, and potentially voltage gain, depending on the application.

High Speed Terahertz Modulator on the Chip Based on Tunable Terahertz Slot Waveguide

PubMed Central

Singh, P. K.; Sonkusale, S.

2017-01-01

This paper presents an on-chip device that can perform gigahertz-rate amplitude modulation and switching of broadband terahertz electromagnetic waves. The operation of the device is based on the interaction of confined THz waves in a novel slot waveguide with an electronically tunable two dimensional electron gas (2DEG) that controls the loss of the THz wave propagating through this waveguide. A prototype device is fabricated which shows THz intensity modulation of 96% at 0.25 THz carrier frequency with low insertion loss and device length as small as 100 microns. The demonstrated modulation cutoff frequency exceeds 14 GHz indicating potential for the high-speed modulation of terahertz waves. The entire device operates at room temperature with low drive voltage (<2 V) and zero DC power consumption. The device architecture has potential for realization of the next generation of on-chip modulators and switches at THz frequencies. PMID:28102306

Performance tests of a power-electronics converter for multi-megawatt wind turbines using a grid emulator

NASA Astrophysics Data System (ADS)

Rizqy Averous, Nurhan; Berthold, Anica; Schneider, Alexander; Schwimmbeck, Franz; Monti, Antonello; De Doncker, Rik W.

2016-09-01

A vast increase of wind turbines (WT) contribution in the modern electrical grids have led to the development of grid connection requirements. In contrast to the conventional test method, testing power-electronics converters for WT using a grid emulator at Center for Wind Power Drives (CWD) RWTH Aachen University offers more flexibility for conducting test scenarios. Further analysis on the performance of the device under test (DUT) is however required when testing with grid emulator since the characteristic of the grid emulator might influence the performance of the DUT. This paper focuses on the performance analysis of the DUT when tested using grid emulator. Beside the issue regarding the current harmonics, the performance during Fault Ride-Through (FRT) is discussed in detail. A power hardware in the loop setup is an attractive solution to conduct a comprehensive study on the interaction between the power-electronics converters and the electrical grids.

Effects of 30 Mev Electron Irradiation on InGaAsP LEDs (Light Emitting Diodes) and InGaAs Photodiodes.

DTIC Science & Technology

1986-06-01

devices in satellites and military combat systems, the reliability of LEDs and photodiodes when exposed to the typical radiation of a space or nuclear ...could be exposed to: nuclear power plants, space environments or a nuclear weapon detonation. When located on the 15 surface of the earth, nuclear power...35,000 miles above the earth’s surface. Additionally, electrons, neutrons and other products from a high altitude detonation of a nuclear weapon can

Nuclear electric power sources

NASA Technical Reports Server (NTRS)

Singh, J. J.

1978-01-01

Measurements on radioactive commercial p-n junction silicon cells show that these units are capable of delivering several hundred microwatts per curie of Am-241 alpha source, indicating their usefulness in such electronic devices as hearing aids, heart pacemakers, electronic watches, delay timers and nuclear dosimeter chargers. It is concluded that the Am-241 sources are superior to the beta sources used previously, because of higher alpha specific ionization and simultaneous production of low energy photons which are easily converted into photoelectrons for additional power.

Low cost electronic ultracapacitor interface technique to provide load leveling of a battery for pulsed load or motor traction drive applications

DOEpatents

King, Robert Dean; DeDoncker, Rik Wivina Anna Adelson

1998-01-01

A battery load leveling arrangement for an electrically powered system in which battery loading is subject to intermittent high current loading utilizes a passive energy storage device and a diode connected in series with the storage device to conduct current from the storage device to the load when current demand forces a drop in battery voltage. A current limiting circuit is connected in parallel with the diode for recharging the passive energy storage device. The current limiting circuit functions to limit the average magnitude of recharge current supplied to the storage device. Various forms of current limiting circuits are disclosed, including a PTC resistor coupled in parallel with a fixed resistor. The current limit circuit may also include an SCR for switching regenerative braking current to the device when the system is connected to power an electric motor.

Analysis of counter flow of corona wind for heat transfer enhancement

NASA Astrophysics Data System (ADS)

Shin, Dong Ho; Baek, Soo Hong; Ko, Han Seo

2018-03-01

A heat sink for cooling devices using the counter flow of a corona wind was developed in this study. Detailed information about the numerical investigations of forced convection using the corona wind was presented. The fins of the heat sink using the counter flow of a corona wind were also investigated. The corona wind generator with a wire-to-plate electrode arrangement was used for generating the counter flow to the fin. The compact and simple geometric characteristics of the corona wind generator facilitate the application of the heat sink using the counter flow, demonstrating the heat sink is effective for cooling electronic devices. Parametric studies were performed to analyze the effect of the counter flow on the fins. Also, the velocity and temperature were measured experimentally for the test mock-up of the heat sink with the corona wind generator to verify the numerical results. From a numerical study, the type of fin and its optimal height, length, and pitch were suggested for various heat fluxes. In addition, the correlations to calculate the mass of the developed heat sink and its cooling performance in terms of the heat transfer coefficient were derived. Finally, the cooling efficiencies corresponding to the mass, applied power, total size, and noise of the devices were compared with the existing commercial central processing unit (CPU) cooling devices with rotor fans. As a result, it was confirmed that the heat sink using the counter flow of the corona wind showed appropriate efficiencies for cooling electronic devices, and is a suitable replacement for the existing cooling device for high power electronics.

[Wireless device for monitoring the patients with chronic disease].

PubMed

Ciorap, R; Zaharia, D; Corciovă, C; Ungureanu, Monica; Lupu, R; Stan, A

2008-01-01

Remote monitoring of chronic diseases can improve health outcomes and potentially lower health care costs. The high number of the patients, suffering of chronically diseases, who wish to stay at home rather then in a hospital increasing the need of homecare monitoring and have lead to a high demand of wearable medical devices. Also, extended patient monitoring during normal activity has become a very important target. In this paper are presented the design of the wireless monitoring devices based on ultra low power circuits, high storage memory flash, bluetooth communication and the firmware for the management of the monitoring device. The monitoring device is built using an ultra low power microcontroller (MSP430 from Texas Instruments) that offers the advantage of high integration of some circuits. The custom made electronic boards used for biosignal acquisition are also included modules for storage device (SD/MMC card) with FAT32 file system and Bluetooth device for short-range communication used for data transmission between monitoring device and PC or PDA. The work was focused on design and implementation of an ultra low power wearable device able to acquire patient vital parameters, causing minimal discomfort and allowing high mobility. The proposed wireless device could be used as a warning system for monitoring during normal activity.

Simulations of High Harmonic Fast Wave Heating on the C-2U Advanced Beam-Driven Field-Reversed Configuration Device

NASA Astrophysics Data System (ADS)

Yang, Xiaokang; Petrov, Yuri; Ceccherini, Francesco; Koehn, Alf; Galeotti, Laura; Dettrick, Sean; Binderbauer, Michl

2017-10-01

Numerous efforts have been made at Tri-Alpha Energy (TAE) to theoretically explore the physics of microwave electron heating in field-reversed configuration (FRC) plasmas. For the fixed 2D profiles of plasma density and temperature for both electrons and thermal ions and equilibrium field of the C-2U machine, simulations with GENRAY-C ray-tracing code have been conducted for the ratios of ω/ωci[D] in the range of 6 - 20. Launch angles and antenna radial and axial positions have been optimized in order to simultaneously achieve good wave penetration into the core of FRC plasmas and efficient power damping on electrons. It is found that in an optimal regime, single pass absorption efficiency is 100% and most of the power is deposited inside the separatrix of FRC plasmas, with power damping efficiency of about 72% on electrons and less than 19% on ions. Calculations have clearly demonstrated that substantial power absorption on electrons is mainly attributed to high beta enhancement of magnetic pumping; complete power damping occurs before Landau damping has a significant effect on power absorption.

Dendron engineering in self-host blue iridium dendrimers towards low-voltage-driving and power-efficient nondoped electrophosphorescent devices.

PubMed

Wang, Yang; Wang, Shumeng; Ding, Junqiao; Wang, Lixiang; Jing, Xiabin; Wang, Fosong

2016-12-20

Dendron engineering in self-host blue Ir dendrimers is reported to develop power-efficient nondoped electrophosphorescent devices for the first time, which can be operated at low voltage close to the theoretical limit (E g /e: corresponding to the optical bandgap divided by the electron charge). With increasing dendron's HOMO energy levels from B-POCz to B-CzCz and B-CzTA, effective hole injection is favored to promote exciton formation, resulting in a significant reduction of driving voltage and improvement of power efficiency. Consequently, the nondoped device of B-CzTA achieves extremely low driving voltages of 2.7/3.4/4.4 V and record high power efficiencies of 30.3/24.4/16.3 lm W -1 at 1, 100 and 1000 cd m -2 , respectively. We believe that this work will pave the way to the design of novel power-efficient self-host blue phosphorescent dendrimers used for energy-saving displays and solid-state lightings.

Nanocarbon-Based Materials for Flexible All-Solid-State Supercapacitors.

PubMed

Lv, Tian; Liu, Mingxian; Zhu, Dazhang; Gan, Lihua; Chen, Tao

2018-04-01

Because of the rapid development of flexible electronics, it is important to develop high-performance flexible energy-storage devices, such as supercapacitors and metal-ion batteries. Compared with metal-ion batteries, supercapacitors exhibit higher power density, longer cycling life, and excellent safety, and they can be easily fabricated into all-solid-state devices by using polymer gel electrolytes. All-solid-state supercapacitors (ASSSCs) have the advantages of being lightweight and flexible, thus showing great potential to be used as power sources for flexible portable electronics. Because of their high specific surface area and excellent electrical and mechanical properties, nanocarbon materials (such as carbon nanotubes, graphene, carbon nanofibers, and so on) have been widely used as efficient electrode materials for flexible ASSSCs, and great achievements have been obtained. Here, the recent advances in flexible ASSSCs are summarized, from design strategies to fabrication techniques for nanocarbon electrodes and devices. Current challenges and future perspectives are also discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

MCTs and IGBTs - A comparison of performance in power electronic circuits

NASA Technical Reports Server (NTRS)

Sul, S. K.; Profumo, F.; Cho, G. H.; Lipo, T. A.

1989-01-01

There is a continuous demand for improvements in the quality of switching power devices, such as higher switching frequency, higher withstand voltage capability, larger current-handling capability, and lower conduction losses. However, for single-conduction-mechanism devices (SCRs, GTOs, BJTs, FETs), possessing all these features is probably unrealizable for physical reasons. An attractive solution appears to be double-mechanism devices, in which the features of both a minority carrier device (BJT or SCR) and a majority carrier device (MOSFET) are embedded. Both IGBTs (insulated-gate bipolar transistors) and MCTs (MOS-controlled thyristors) belong to this family of double-mechanism devices and promise to have a major impact on converter circuit signs. The authors deal with the major features of these two devices, pointing out those that are most critical to the design of converter topologies. In particular, the two devices have been tested both in a chopper and in two resonant link converter topologies, and the experimental results are reported.

Refrigerant directly cooled capacitors

DOEpatents

Hsu, John S [Oak Ridge, TN; Seiber, Larry E [Oak Ridge, TN; Marlino, Laura D [Oak Ridge, TN; Ayers, Curtis W [Kingston, TN

2007-09-11

The invention is a direct contact refrigerant cooling system using a refrigerant floating loop having a refrigerant and refrigeration devices. The cooling system has at least one hermetic container disposed in the refrigerant floating loop. The hermetic container has at least one electronic component selected from the group consisting of capacitors, power electronic switches and gating signal module. The refrigerant is in direct contact with the electronic component.

USSR and Eastern Europe Scientific Abstracts, Electronics and Electrical Engineering, Number 27

DTIC Science & Technology

1977-02-10

input and output conditions. The power section of the circuit is modified to permit triacs and thyristors, respectively, to function. The purpose of the...electronic materials, components, and devices, on circuit theory, pulse techniques, electromagnetic wave propagation, radar, quantum electronic theory...Lasers, Masers, Holography, Quasi-Optical 20 Microelectronics and General Circuit Theory and Information 21 Radars and Radio Wavigati on 22

Enhanced confinement in electron cyclotron resonance ion source plasma.

PubMed

Schachter, L; Stiebing, K E; Dobrescu, S

2010-02-01

Power loss by plasma-wall interactions may become a limitation for the performance of ECR and fusion plasma devices. Based on our research to optimize the performance of electron cyclotron resonance ion source (ECRIS) devices by the use of metal-dielectric (MD) structures, the development of the method presented here, allows to significantly improve the confinement of plasma electrons and hence to reduce losses. Dedicated measurements were performed at the Frankfurt 14 GHz ECRIS using argon and helium as working gas and high temperature resistive material for the MD structures. The analyzed charge state distributions and bremsstrahlung radiation spectra (corrected for background) also clearly verify the anticipated increase in the plasma-electron density and hence demonstrate the advantage by the MD-method.

Flexible and stretchable microbial fuel cells with modified conductive and hydrophilic textile.

PubMed

Pang, Sumiao; Gao, Yang; Choi, Seokheun

2018-02-15

We built a flexible, stretchable microbial fuel cell (MFC) by laminating two functional components: a bioanode textile with a conductive and hydrophilic polymer coating and a solid-state cathode textile loaded with silver oxide. The textile MFC used Pseudomonas aeruginosa PAO1 as a biocatalyst to generate the maximum power and current density of 1.0µW/cm 2 and 6.3µA/cm 2 , respectively, which are comparable with or even higher than other flexible MFCs such as paper-based devices (~ a few µW/cm 2 ). Additionally, the textile MFC generated consistent power even with repeated 70 cycles of 50% stretching. A simple batch fabrication method simultaneously produced 20 individual 2cm × 2cm devices by using brushing, spraying, ironing, and computerized sewing, a process that will revolutionize the mass production of textile MFCs. This achievement is scientifically meaningful because developing textile MFCs requires integration of both electronic and fluidic components into the textile three-dimensionally. This flexible and stretchable energy harvesting device is expected to be easily integrated with the next generation stretchable electronics for realizing low-power, stand-alone, self-sustainable systems. Copyright © 2017 Elsevier B.V. All rights reserved.

Automatic Frequency Controller for Power Amplifiers Used in Bio-Implanted Applications: Issues and Challenges

PubMed Central

Hannan, Mahammad A.; Hussein, Hussein A.; Mutashar, Saad; Samad, Salina A.; Hussain, Aini

2014-01-01

With the development of communication technologies, the use of wireless systems in biomedical implanted devices has become very useful. Bio-implantable devices are electronic devices which are used for treatment and monitoring brain implants, pacemakers, cochlear implants, retinal implants and so on. The inductive coupling link is used to transmit power and data between the primary and secondary sides of the biomedical implanted system, in which efficient power amplifier is very much needed to ensure the best data transmission rates and low power losses. However, the efficiency of the implanted devices depends on the circuit design, controller, load variation, changes of radio frequency coil's mutual displacement and coupling coefficients. This paper provides a comprehensive survey on various power amplifier classes and their characteristics, efficiency and controller techniques that have been used in bio-implants. The automatic frequency controller used in biomedical implants such as gate drive switching control, closed loop power control, voltage controlled oscillator, capacitor control and microcontroller frequency control have been explained. Most of these techniques keep the resonance frequency stable in transcutaneous power transfer between the external coil and the coil implanted inside the body. Detailed information including carrier frequency, power efficiency, coils displacement, power consumption, supplied voltage and CMOS chip for the controllers techniques are investigated and summarized in the provided tables. From the rigorous review, it is observed that the existing automatic frequency controller technologies are more or less can capable of performing well in the implant devices; however, the systems are still not up to the mark. Accordingly, current challenges and problems of the typical automatic frequency controller techniques for power amplifiers are illustrated, with a brief suggestions and discussion section concerning the progress of implanted device research in the future. This review will hopefully lead to increasing efforts towards the development of low powered, highly efficient, high data rate and reliable automatic frequency controllers for implanted devices. PMID:25615728

Fundamental Studies of Electronic Properties of Materials and Devices for High Power, Compact Terahertz Vacuum Electron Devices

DTIC Science & Technology

2011-12-23

International Conference on Plasma Science, Karlsruhe, Germany, 2008. [9] K.J. Willis, S.C. Hagness, and I. Knezevic, “A global EMC/FDTD simulation...Materials,” 2010 IEEE AP-S International Symposium on Antennas and Propagation and 2010 USNC/ CNC /URSI Meeting in Toronto, ON, Canada, July 11-17...with a High-Q Quasioptical Resonator,” IEEE Int’l Conf. Plasma Sci., Chicago, IL, June 26-30, (2011), paper IO2B-4. [21] M.J. Weber, B.B. Yang, S.L

Fuzzy logic modeling of high performance rechargeable batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, P.; Fennie, C. Jr.; Reisner, D.E.

1998-07-01

Accurate battery state-of-charge (SOC) measurements are critical in many portable electronic device applications. Yet conventional techniques for battery SOC estimation are limited in their accuracy, reliability, and flexibility. In this paper the authors present a powerful new approach to estimate battery SOC using a fuzzy logic-based methodology. This approach provides a universally applicable, accurate method for battery SOC estimation either integrated within, or as an external monitor to, an electronic device. The methodology is demonstrated in modeling impedance measurements on Ni-MH cells and discharge voltage curves of Li-ion cells.

Amplified Thermionic Cooling Using Arrays of Nanowires

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok; Choi, Daniel; Shcheglov, Kirill; Hishinuma, Yoshikazu

2007-01-01

A class of proposed thermionic cooling devices would incorporate precise arrays of metal nanowires as electron emitters. The proposed devices could be highly miniaturized, enabling removal of heat from locations, very close to electronic devices, that have previously been inaccessible for heat-removal purposes. The resulting enhancement of removal of heat would enable operation of the devices at higher power levels and higher clock speeds. Moreover, the mass, complexity, and bulk of electronic circuitry incorporating these highly miniaturized cooling devices could be considerably reduced, relative to otherwise equivalent circuitry cooled by conventional electromechanical, thermoelectric, and fluidic means. In thermionic cooling, one exploits the fact that because only the highest-energy electrons are thermionically emitted, collecting those electrons to prevent their return to the emitting electrode results in the net removal of heat from that electrode. Collection is effected by applying an appropriate positive bias potential to another electrode placed near the emitting electrode. The concept underlying the proposal is that the thermionic-emission current and, hence, the cooling effect attainable by use of an array of nanowires could be significantly greater than that attainable by use of a single emitting electrode or other electron- emitting surface. The wires in an array according to the proposal would protrude perpendicularly from a planar surface and their heights would be made uniform to within a sub-nanometer level of precision

Molecular interfaces for plasmonic hot electron photovoltaics

NASA Astrophysics Data System (ADS)

Pelayo García de Arquer, F.; Mihi, Agustín; Konstantatos, Gerasimos

2015-01-01

The use of self-assembled monolayers (SAMs) to improve and tailor the photovoltaic performance of plasmonic hot-electron Schottky solar cells is presented. SAMs allow the simultaneous control of open-circuit voltage, hot-electron injection and short-circuit current. To that end, a plurality of molecule structural parameters can be adjusted: SAM molecule's length can be adjusted to control plasmonic hot electron injection. Modifying SAMs dipole moment allows for a precise tuning of the open-circuit voltage. The functionalization of the SAM can also be selected to modify short-circuit current. This allows the simultaneous achievement of high open-circuit voltages (0.56 V) and fill-factors (0.58), IPCE above 5% at the plasmon resonance and maximum power-conversion efficiencies of 0.11%, record for this class of devices.The use of self-assembled monolayers (SAMs) to improve and tailor the photovoltaic performance of plasmonic hot-electron Schottky solar cells is presented. SAMs allow the simultaneous control of open-circuit voltage, hot-electron injection and short-circuit current. To that end, a plurality of molecule structural parameters can be adjusted: SAM molecule's length can be adjusted to control plasmonic hot electron injection. Modifying SAMs dipole moment allows for a precise tuning of the open-circuit voltage. The functionalization of the SAM can also be selected to modify short-circuit current. This allows the simultaneous achievement of high open-circuit voltages (0.56 V) and fill-factors (0.58), IPCE above 5% at the plasmon resonance and maximum power-conversion efficiencies of 0.11%, record for this class of devices. Electronic supplementary information (ESI) available: Contact-potential differentiometry measurements, FTIR characterization, performance statistics and gold devices. See DOI: 10.1039/c4nr06356b

An experimental investigation of using carbon foam-PCM-MWCNTs composite materials for thermal management of electronic devices under pulsed power modes

NASA Astrophysics Data System (ADS)

Alshaer, W. G.; Rady, M. A.; Nada, S. A.; Palomo Del Barrio, Elena; Sommier, Alain

2017-02-01

The present article reports on a detailed experimental investigation of using carbon foam-PCM-MWCNTs composite materials for thermal management (TM) of electronic devices subjected to pulsed power. The TM module was fabricated by infiltrating paraffin wax (RT65) as a phase change material (PCM) and multi walled carbon nanotubes (MWCNTs) as a thermal conductivity enhancer in a carbon foam as a base structure. Two carbon foam materials of low and high values of thermal conductivities, CF20 and KL1-250 (3.1 and 40 W/m K), were tested as a base structure for the TM modules. Tests were conducted at different power intensities and power cycling/loading modes. Results showed that for all power varying modes and all carbon foams, the infiltration of RT65 into carbon foam reduces the temperature of TM module and results in damping the temperature spikes height. Infiltration of MWCNTS into RT65 further improves the effectiveness of TM module. Temperature damping was more pronounced in stand-alone pulsed power cycles as compared to pulsed power spikes modes. The effectiveness of inclusion of RT65 and RT65/MWCNTs in damping the temperature spikes height is remarkable in TM modules based on KL1-250 as compared to CF-20.

Development of Electronics for Low-Temperature Space Missions

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad; Dickman, John E.; Gerber, Scott S.; Overton, Eric

2001-01-01

Electronic systems that are capable of operating at cryogenic temperatures will be needed for many future NASA space missions, including deep space probes and spacecraft for planetary surface exploration. In addition to being able to survive the harsh deep space environment, low-temperature electronics would help improve circuit performance, increase system efficiency, and reduce payload development and launch costs. Terrestrial applications where components and systems must operate in low-temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation systems, and arctic exploration. An ongoing research and development project for the design, fabrication, and characterization of low-temperature electronics and supporting technologies at NASA Glenn Research Center focuses on efficient power systems capable of surviving in and exploiting the advantages of low-temperature environments. Supporting technologies include dielectric and insulating materials, semiconductor devices, passive power components, optoelectronic devices, and packaging and integration of the developed components into prototype flight hardware. An overview of the project is presented, including a description of the test facilities, a discussion of selected data from component testing, and a presentation of ongoing research activities being performed in collaboration with various organizations.

Four Dimensional Analysis of Free Electron Lasers in the Amplifier Configuration

DTIC Science & Technology

2007-12-01

FEL. The power capability of this device was so much greater than that of conventional klystrons and magnetrons that records for peak power ...understand the four dimensional behavior of the high power FEL amplifier. The simulation program required dimensionless input parameters, which make...33 OPTICAL PARAMETERS inP Seed laser power inT Seed pulse duration S Distance to First Optic 0Z Rayleigh length 2 0 0 WZ π λ= λ

Electronic safing of a diode laser arm-fire device

NASA Astrophysics Data System (ADS)

Willis, Kenneth E.; Chang, Suk T.

1993-06-01

The paper describes a rocket motor arm-fire device which uses a diode laser protected from unintentional function with a specially designed RF frequency attenuating coupler (RFAC). The RFAC transfers power into a Faraday cage via magnetic flux, thereby protecting the diode, its drive circuit, and the pyrotechnic from all electromagnetic and electrostatic hazards. Diagrams of the diode laser arm-fire device are presented together with a diagram illustrating the RFAC principle of operation.

Hollow-cathode electrode for high-power, high-pressure discharge devices

DOEpatents

Chang, J.J.; Alger, T.W.

1995-08-22

Several different cold cathode configurations are disclosed for a gas discharge device each having a plurality of grooves of selected spacing, depth and width to improve the emission of electrons in a gas discharge device. Each of the cold cathode configurations can be machined from a single piece of a selected material. Several of the configurations can be assembled with individual elements which is easily seen from the various figures. 8 figs.

Microfocus computed tomography in medicine

NASA Astrophysics Data System (ADS)

Obodovskiy, A. V.

2018-02-01

Recent advances in the field of high-frequency power schemes for X-ray devices allow the creation of high-resolution instruments. At the department of electronic devices and Equipment of the St. Petersburg State Electrotechnical University, a model of a microfocus computer tomograph was developed. Used equipment allows to receive projection data with an increase up to 100 times. A distinctive feature of the device is the possibility of implementing various schemes for obtaining projection data.

High Power Broadband Millimeter Wave TWTs

NASA Astrophysics Data System (ADS)

James, Bill G.

1998-04-01

In the early 1980's the requirement for high power broadband millimeter wave sources encouraged the development of microwave vacuum device amplifiers for radar and communication systems. Many government funded programs were implemented for the development of high power broadband millimeter wave amplifiers that would meet the needs of the high power community. The tube design capable of meeting these goals was the slow wave coupled cavity traveling wave device, which had a proven technology base at the lower frequencies (X Band). However scaling this technology to the millimeter frequencies had severe shortcomings in both thermal and manufacturing design. These shortcomings were overcome with the development of the Ladder Circuit technology. In conjunction with the circuit development high power electron beam systems had to be developed for the generation of high rf powers. These beam systems had to be capable of many megawatts of beam power density and high current densities. The cathode technology required to be capable of operating at current densities of 10 amperes per square centimeter at long pulse lengths and high duty cycle. Since the introduction of the Ladder Circuit technology a number of high power broadband millimeter wave amplifiers have been developed and deployed in operating radar and communication systems. Broadband millimeter wave sources have been manufactured in the frequency range from 27 GHz to 100 GHz with power levels ranging from 100 watts CW to 10 kilowatts Peak at W band over a 2 GHz bandwidth. Also a 50 kW peak power and 10 kW average power device at Ka band with 2 GHz bandwidth has been developed. Today the power levels achieved by these devices are nearing the limits of this technology; therefore to gain a significant increase in power at the millimeter wave frequencies, other technologies will have to be considered, particularly fast wave devices. This paper will briefly review the ladder circuit technology and present the designs of a number of broadband high power devices developed at Ka and W band. The discussion will include the beam systems employed in these devices which are the highest power density linear beams generated to date. In conclusion the limits of the power generating capability of this technology will be presented.

On the Properties and Design of Organic Light-Emitting Devices

NASA Astrophysics Data System (ADS)

Erickson, Nicholas C.

Organic light-emitting devices (OLEDs) are attractive for use in next-generation display and lighting technologies. In display applications, OLEDs offer a wide emission color gamut, compatibility with flexible substrates, and high power efficiencies. In lighting applications, OLEDs offer attractive features such as broadband emission, high-performance, and potential compatibility with low-cost manufacturing methods. Despite recent demonstrations of near unity internal quantum efficiencies (photons out per electron in), OLED adoption lags conventional technologies, particularly in large-area displays and general lighting applications. This thesis seeks to understand the optical and electronic properties of OLED materials and device architectures which lead to not only high peak efficiency, but also reduced device complexity, high efficiency under high excitation, and optimal white-light emission. This is accomplished through the careful manipulation of organic thin film compositions fabricated via vacuum thermal evaporation, and the introduction of a novel device architecture, the graded-emissive layer (G-EML). This device architecture offers a unique platform to study the electronic properties of varying compositions of organic semiconductors and the resulting device performance. This thesis also introduces an experimental technique to measure the spatial overlap of electrons and holes within an OLED's emissive layer. This overlap is an important parameter which is affected by the choice of materials and device design, and greatly impacts the operation of the OLED at high excitation densities. Using the G-EML device architecture, OLEDs with improved efficiency characteristics are demonstrated, achieving simultaneously high brightness and high efficiency.

Study of CdTe/CdS solar cell at low power density for low-illumination applications

NASA Astrophysics Data System (ADS)

Devi, Nisha; Aziz, Anver; Datta, Shouvik

2016-05-01

In this paper, we numerically investigate CdTe/CdS PV cell properties using a simulation program Solar Cell Capacitance Simulator in 1D (SCAPS-1D). A simple structure of CdTe PV cell has been optimized to study the effect of temperature, absorber thickness and work function at very low incident power. Objective of this research paper is to build an efficient and cost effective solar cell for portable electronic devices such as portable computers and cell phones that work at low incident power because most of such devices work at diffused and reflected sunlight. In this report, we simulated a simple CdTe PV cell at very low incident power, which gives good efficiency.

Graphene-based in-plane micro-supercapacitors with high power and energy densities

PubMed Central

Wu, Zhong–Shuai; Parvez, Khaled; Feng, Xinliang; Müllen, Klaus

2013-01-01

Micro-supercapacitors are important on-chip micro-power sources for miniaturized electronic devices. Although the performance of micro-supercapacitors has been significantly advanced by fabricating nanostructured materials, developing thin-film manufacture technologies and device architectures, their power or energy densities remain far from those of electrolytic capacitors or lithium thin-film batteries. Here we demonstrate graphene-based in-plane interdigital micro-supercapacitors on arbitrary substrates. The resulting micro-supercapacitors deliver an area capacitance of 80.7 μF cm−2 and a stack capacitance of 17.9 F cm−3. Further, they show a power density of 495 W cm−3 that is higher than electrolytic capacitors, and an energy density of 2.5 mWh cm−3 that is comparable to lithium thin-film batteries, in association with superior cycling stability. Such microdevices allow for operations at ultrahigh rate up to 1,000 V s−1, three orders of magnitude higher than that of conventional supercapacitors. Micro-supercapacitors with an in-plane geometry have great promise for numerous miniaturized or flexible electronic applications. PMID:24042088

Graphene-based in-plane micro-supercapacitors with high power and energy densities.

PubMed

Wu, Zhong-Shuai; Parvez, Khaled; Feng, Xinliang; Müllen, Klaus

2013-01-01

Micro-supercapacitors are important on-chip micro-power sources for miniaturized electronic devices. Although the performance of micro-supercapacitors has been significantly advanced by fabricating nanostructured materials, developing thin-film manufacture technologies and device architectures, their power or energy densities remain far from those of electrolytic capacitors or lithium thin-film batteries. Here we demonstrate graphene-based in-plane interdigital micro-supercapacitors on arbitrary substrates. The resulting micro-supercapacitors deliver an area capacitance of 80.7 μF cm⁻² and a stack capacitance of 17.9 F cm⁻³. Further, they show a power density of 495 W cm⁻³ that is higher than electrolytic capacitors, and an energy density of 2.5 mWh cm⁻³ that is comparable to lithium thin-film batteries, in association with superior cycling stability. Such microdevices allow for operations at ultrahigh rate up to 1,000 V s⁻¹, three orders of magnitude higher than that of conventional supercapacitors. Micro-supercapacitors with an in-plane geometry have great promise for numerous miniaturized or flexible electronic applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jia, Zhiwei, E-mail: jiayege@hotmail.com; Yan, Guozheng; Zhu, Bingquan

An implanted telemetry system for experimental animals with or without anaesthesia can be used to continuously monitor physiological parameters. This system is significant not only in the study of organisms but also in the evaluation of drug efficacy, artificial organs, and auxiliary devices. The system is composed of a miniature electronic capsule, a wireless power transmission module, a data-recording device, and a processing module. An electrocardiograph, a temperature sensor, and a pressure sensor are integrated in the miniature electronic capsule, in which the signals are transmitted in vitro by wireless communication after filtering, amplification, and A/D sampling. To overcome themore » power shortage of batteries, a wireless power transmission module based on electromagnetic induction was designed. The transmitting coil of a rectangular-section solenoid and a 3D receiving coil are proposed according to stability and safety constraints. Experiments show that at least 150 mW of power could pick up on the load in a volume of Φ10.5 mm × 11 mm, with a transmission efficiency of 2.56%. Vivisection experiments verified the feasibility of the integrated radio-telemetry system.« less

Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour

NASA Astrophysics Data System (ADS)

Donoval, Daniel; Vrbicky, Andrej; Marek, Juraj; Chvala, Ales; Beno, Peter

2008-06-01

High-voltage power MOSFETs have been widely used in switching mode power supply circuits as output drivers for industrial and automotive electronic control systems. However, as the device size is reduced, the energy handling capability is becoming a very important issue to be addressed together with the trade-off between the series on-resistance RON and breakdown voltage VBR. Unclamped inductive switching (UIS) condition represents the circuit switching operation for evaluating the "ruggedness", which characterizes the device capability to handle high avalanche currents during the applied stress. In this paper we present an experimental method which modifies the standard UIS test and allows extraction of the maximum device temperature after the applied standard stress pulse vanishes. Corresponding analysis and non-destructive prediction of the ruggedness of power DMOSFETs devices supported by advanced 2-D mixed mode electro-thermal device and circuit simulation under UIS conditions using calibrated physical models is provided also. The results of numerical simulation are in a very good correlation with experimental characteristics and contribute to their physical interpretation by identification of the mechanism of heat generation and heat source location and continuous temperature extraction.

Review of GaN-based devices for terahertz operation

NASA Astrophysics Data System (ADS)

Ahi, Kiarash

2017-09-01

GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ˜90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaN-based devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.

Addressing the efficiency roll-off in a fluorescent OLED by facile electron transport layer doping and carrier confinement

NASA Astrophysics Data System (ADS)

Soman, Anjaly; M, Manuraj; Unni, K. N. Narayanan

2018-05-01

Organic light emitting diodes (OLEDs) often face the issue of decreasing power efficiency with increasing brightness. Loss of charge carrier balance is one of the factors contributing to the efficiency roll-off. We demonstrate that by using a combination of doped electron transport layer (ETL) and a specially chosen electron blocking layer (EBL) having high hole mobility, this efficiency roll-off can be effectively suppressed. A tris-(8-hydroxyquinoline) aluminium (Alq3) based OLED has been fabricated with 2,3,6,7-Tetrahydro-1,1,7,7,-tetramethyl-1H, 5H,11H-10-(2-benzothiazolyl) quinolizino-[9,9a, 1n gh]coumarin (C545T) as the emissive dopant. Bulk doping of the ETL with lithium fluoride (LiF) was optimized to increase the luminous intensity as well as the current efficiency. An EBL with high hole mobility introduced between the EML and the hole transport layer (HTL) improved the performance drastically, and the device brightness at 9 V got improved by a factor of 2.5 compared to that of the control device. While increasing the brightness from 100 cd/m2 to 1000 cd/m2, the power efficiency drop was 47% for the control device whereas only a drop of 15% was observed for the modified device. The possible mechanisms for the enhanced performance are discussed.

Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications

NASA Astrophysics Data System (ADS)

Tiwat, Pongthavornkamol; Lei, Pang; Xinhua, Wang; Sen, Huang; Guoguo, Liu; Tingting, Yuan; Xinyu, Liu

2015-07-01

An optimized modeling method of 8 × 100 μm AlGaN/GaN-based high electron mobility transistor (HEMT) for accurate continuous wave (CW) and pulsed power simulations is proposed. Since the self-heating effect can occur during the continuous operation, the power gain from the continuous operation significantly decreases when compared to a pulsed power operation. This paper extracts power performances of different device models from different quiescent biases of pulsed current-voltage (I-V) measurements and compared them in order to determine the most suitable device model for CW and pulse RF microwave power amplifier design. The simulated output power and gain results of the models at Vgs = -3.5 V, Vds = 30 V with a frequency of 9.6 GHz are presented. Project supported by the National Natural Science Foundation of China (No. 61204086).

Miniature Radioisotope Thermoelectric Power Cubes

NASA Technical Reports Server (NTRS)

Patel, Jagdish U.; Fleurial, Jean-Pierre; Snyder, G. Jeffrey; Caillat, Thierry

2004-01-01

Cube-shaped thermoelectric devices energized by a particles from radioactive decay of Cm-244 have been proposed as long-lived sources of power. These power cubes are intended especially for incorporation into electronic circuits that must operate in dark, extremely cold locations (e.g., polar locations or deep underwater on Earth, or in deep interplanetary space). Unlike conventional radioisotope thermoelectric generators used heretofore as central power sources in some spacecraft, the proposed power cubes would be small enough (volumes would range between 0.1 and 0.2 cm3) to play the roles of batteries that are parts of, and dedicated to, individual electronic-circuit packages. Unlike electrochemical batteries, these power cubes would perform well at low temperatures. They would also last much longer: given that the half-life of Cm-244 is 18 years, a power cube could remain adequate as a power source for years, depending on the power demand in its particular application.

A novel thermal acoustic device based on porous graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, Lu-Qi; Liu, Ying; Ju, Zhen-Yi

2016-01-15

A thermal acoustic (TA) device was fabricated by laser scribing technology. Polyimide (PI) can be converted into patterned porous graphene (PG) by laser’s irradiation in one step. The sound pressure level (SPL) of such TA device is related to laser power. The theoretical model of TA effect was established to analyze the relationship between the SPL and laser power. The theoretical results are in good agreement with experiment results. It was found that PG has a flat frequency response in the range of 5-20 kHz. This novel TA device has the advantages of one-step procedure, high flexibility, no mechanical vibration,more » low cost and so on. It can open wide applications in speakers, multimedia, medical, earphones, consumer electronics and many other aspects.« less

Design of a handheld infrared imaging device based on uncooled infrared detector

NASA Astrophysics Data System (ADS)

Sun, Xianzhong; Li, Junwei; Zhang, Yazhou

2017-02-01

This paper, we introduced the system structure and operation principle of the device, and discussed our solutions for image data acquisition and storage, operating states and modes control and power management in detail. Besides, we proposed a algorithm of pseudo color for thermal image and applied it to the image processing module of the device. The thermal images can be real time displayed in a 1.8 inches TFT-LCD. The device has a compacted structure and can be held easily by one hand. It also has a good imaging performance with low power consumption, thermal sensitivity is less than 150mK. At last, we introduced one of its applications for fault diagnosis in electronic circuits, the test shows that: it's a good solution for fast fault detection.

Low-Temperature Power Electronics Program

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Dickman, John E.; Hammoud, Ahmad; Gerber, Scott

1997-01-01

Many space and some terrestrial applications would benefit from the availability of low-temperature electronics. Exploration missions to the outer planets, Earth-orbiting and deep-space probes, and communications satellites are examples of space applications which operate in low-temperature environments. Space probes deployed near Pluto must operate in temperatures as low as -229 C. Figure 1 depicts the average temperature of a space probe warmed by the sun for various locations throughout the solar system. Terrestrial applications where components and systems must operate in low-temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation system, and arctic exploration. The development of electrical power systems capable of extremely low-temperature operation represents a key element of some advanced space power systems. The Low-Temperature Power Electronics Program at NASA Lewis Research Center focuses on the design, fabrication, and characterization of low-temperature power systems and the development of supporting technologies for low-temperature operations such as dielectric and insulating materials, power components, optoelectronic components, and packaging and integration of devices, components, and systems.

Fundamental Studies and Development of III-N Visible LEDs for High-Power Solid-State Lighting Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dupuis, Russell

The goal of this program is to understand in a fundamental way the impact of strain, defects, polarization, and Stokes loss in relation to unique device structures upon the internal quantum efficiency (IQE) and efficiency droop (ED) of III-nitride (III-N) light-emitting diodes (LEDs) and to employ this understanding in the design and growth of high-efficiency LEDs capable of highly-reliable, high-current, high-power operation. This knowledge will be the basis for our advanced device epitaxial designs that lead to improved device performance. The primary approach we will employ is to exploit new scientific and engineering knowledge generated through the application of amore » set of unique advanced growth and characterization tools to develop new concepts in strain-, polarization-, and carrier dynamics-engineered and low-defect materials and device designs having reduced dislocations and improved carrier collection followed by efficient photon generation. We studied the effects of crystalline defect, polarizations, hole transport, electron-spillover, electron blocking layer, underlying layer below the multiplequantum- well active region, and developed high-efficiency and efficiency-droop-mitigated blue LEDs with a new LED epitaxial structures. We believe new LEDs developed in this program will make a breakthrough in the development of high-efficiency high-power visible III-N LEDs from violet to green spectral region.« less

Energy Harvesting from the Animal/Human Body for Self-Powered Electronics.

PubMed

Dagdeviren, Canan; Li, Zhou; Wang, Zhong Lin

2017-06-21

Living subjects (i.e., humans and animals) have abundant sources of energy in chemical, thermal, and mechanical forms. The use of these energies presents a viable way to overcome the battery capacity limitation that constrains the long-term operation of wearable/implantable devices. The intersection of novel materials and fabrication techniques offers boundless possibilities for the benefit of human health and well-being via various types of energy harvesters. This review summarizes the existing approaches that have been demonstrated to harvest energy from the bodies of living subjects for self-powered electronics. We present material choices, device layouts, and operation principles of these energy harvesters with a focus on in vivo applications. We discuss a broad range of energy harvesters placed in or on various body parts of human and animal models. We conclude with an outlook of future research in which the integration of various energy harvesters with advanced electronics can provide a new platform for the development of novel technologies for disease diagnostics, treatment, and prevention.

The development of silicon carbide-based power electronics devices

NASA Astrophysics Data System (ADS)

Hopkins, Richard H.; Perkins, John F.

1995-01-01

In 1989 Westinghouse created an internally funded initiative to develop silicon carbide materials and device technology for a variety of potential commercial and military applications. Westinghouse saw silicon carbide as having the potential for dual use. For space applications, size and weight reductions could be achieved, together with increased reliability. Terrestrially, uses in harsh-temperature environments would be enabled. Theoretically, the physical and electrical properties of silicon carbide were highly promising for high-power, high-temperature, radiation-hardened electronics. However, bulk material with the requisite electronic qualities was not available, and the methods needed to produce a silicon carbide wafer—to fabricate high-quality devices—and to transition these technologies into a commercial product were considered to be a high-risk investment. It was recognized that through a collaborative effort, the CCDS could provide scientific expertise in several areas, thus reducing this risk. These included modeling of structures, electrical contacts, dielectrics, and epitaxial growth. This collaboration has been very successful, with developed technologies being transferred to Westinghouse.

Defective TiO 2 with high photoconductive gain for efficient and stable planar heterojunction perovskite solar cells

DOE PAGES

Li, Yanbo; Cooper, Jason K.; Liu, Wenjun; ...

2016-08-18

Formation of planar heterojunction perovskite solar cells exhibiting both high efficiency and stability under continuous operation remains a challenge. Here, we show this can be achieved by using a defective TiO 2 thin film as the electron transport layer. TiO 2 layers with native defects are deposited by electron beam evaporation in an oxygen-deficient environment. Deep-level hole traps are introduced in the TiO 2 layers and contribute to a high photoconductive gain and reduced photocatalytic activity. The high photoconductivity of the TiO 2 electron transport layer leads to improved efficiency for the fabricated planar devices. A maximum power conversion efficiencymore » of 19.0% and an average PCE of 17.5% are achieved. In addition, the reduced photocatalytic activity of the TiO 2 layer leads to enhanced long-Term stability for the planar devices. Under continuous operation near the maximum power point, an efficiency of over 15.4% is demonstrated for 100 h.« less

Smart Power: New power integrated circuit technologies and their applications

NASA Astrophysics Data System (ADS)

Kuivalainen, Pekka; Pohjonen, Helena; Yli-Pietilae, Timo; Lenkkeri, Jaakko

1992-05-01

Power Integrated Circuits (PIC) is one of the most rapidly growing branches of the semiconductor technology. The PIC markets has been forecast to grow from 660 million dollars in 1990 to 1658 million dollars in 1994. It has even been forecast that at the end of the 1990's the PIC markets would correspond to the value of the whole semiconductor production in 1990. Automotive electronics will play the leading role in the development of the standard PIC's. Integrated motor drivers (36 V/4 A), smart integrated switches (60 V/30 A), solenoid drivers, integrated switch-mode power supplies and regulators are the latest standard devices of the PIC manufactures. ASIC (Application Specific Integrated Circuits) PIC solutions are needed for the same reasons as other ASIC devices: there are no proper standard devices, a company has a lot of application knowhow, which should be kept inside the company, the size of the product must be reduced, and assembly costs are wished to be reduced by decreasing the number of discrete devices. During the next few years the most probable ASIC PIC applications in Finland will be integrated solenoid and motor drivers, an integrated electronic lamp ballast circuit and various sensor interface circuits. Application of the PIC technologies to machines and actuators will strongly be increased all over the world. This means that various PIC's, either standard PIC's or full custom ASIC circuits, will appear in many products which compete with the corresponding Finnish products. Therefore the development of the PIC technologies must be followed carefully in order to immediately be able to apply the latest development in the smart power technologies and their design methods.

Amorphous oxides as electron transport layers in Cu(In,Ga)Se 2 superstrate devices: Amorphous oxides in Cu(In,Ga)Se 2 superstrate devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heinemann, M. D.; van Hest, M. F. A. M.; Contreras, M.

Cu(In,Ga)Se2 (CIGS) solar cells in superstrate configuration promise improved light management and higher stability compared to substrate devices, but they have yet to deliver comparable power conversion efficiencies (PCEs). Chemical reactions between the CIGS layer and the front contact were shown in the past to deteriorate the p-n junction in superstrate devices, which led to lower efficiencies compared to the substrate-type devices. This work aims to solve this problem by identifying a buffer layer between the CIGS layer and the front contact, acting as the electron transport layer, with an optimized electron affinity, doping density and chemical stability. Using combinatorialmore » material exploration we identified amorphous gallium oxide (a-GaOx) as a potentially suitable buffer layer material. The best results were obtained for a-GaOx with an electron affinity that was found to be comparable to that of CIGS. Based on the results of device simulations, it is assumed that detrimental interfacial acceptor states are present at the interface between CIGS and a-GaOx. However, these initial experiments indicate the potential of a-GaOx in this application, and how to reach performance parity with substrate devices, by further increase of its n-type doping density.« less

The effect of coolants on the performance of magnetic micro-refrigerators.

PubMed

Silva, D J; Bordalo, B D; Pereira, A M; Ventura, J; Oliveira, J C R E; Araújo, J P

2014-06-01

Magnetic refrigeration is an alternative cooling technique with envisaged technological applications on micro- and opto-electronic devices. Here, we present a magnetic micro-refrigerator cooling device with embedded micro-channels and based on the magnetocaloric effect. We studied the influence of the coolant fluid in the refrigeration process by numerically simulating the heat transfer processes using the finite element method. This allowed us to calculate the cooling power of the device. Our results show that gallium is the most efficient coolant fluid and, when used with Gd5Si2Ge2, a maximum power of 11.2 W/mm3 at a working frequency of -5 kHz can be reached. However, for operation frequencies around 50 Hz, water is the most efficient fluid with a cooling power of 0.137 W/mm3.

Structurally Engineered Nanoporous Ta2O5-x Selector-Less Memristor for High Uniformity and Low Power Consumption.

PubMed

Kwon, Soonbang; Kim, Tae-Wook; Jang, Seonghoon; Lee, Jae-Hwang; Kim, Nam Dong; Ji, Yongsung; Lee, Chul-Ho; Tour, James M; Wang, Gunuk

2017-10-04

A memristor architecture based on metal-oxide materials would have great promise in achieving exceptional energy efficiency and higher scalability in next-generation electronic memory systems. Here, we propose a facile method for fabricating selector-less memristor arrays using an engineered nanoporous Ta 2 O 5-x architecture. The device was fabricated in the form of crossbar arrays, and it functions as a switchable rectifier with a self-embedded nonlinear switching behavior and ultralow power consumption (∼2.7 × 10 -6 W), which results in effective suppression of crosstalk interference. In addition, we determined that the essential switching elements, such as the programming power, the sneak current, the nonlinearity value, and the device-to-device uniformity, could be enhanced by in-depth structural engineering of the pores in the Ta 2 O 5-x layer. Our results, on the basis of the structural engineering of metal-oxide materials, could provide an attractive approach for fabricating simple and cost-efficient memristor arrays with acceptable device uniformity and low power consumption without the need for additional addressing selectors.

Tubes in space - Very much alive

NASA Technical Reports Server (NTRS)

Kosmahl, H. G.

1983-01-01

Some advantages of TWTs over SSDs are discussed. Wideband TWTs have been developed which can produce 20 W of RF power at 20 GHz with 40 percent efficiency, a figure three or four times that available from SSDs such as FETs. The basic performance of TWTs exceeds that of SSDs for any given bandwidth and frequency. SSDs are transit time limited, and their performance deteriorates fundamentally as the reciprocal of the square of the operating frequency. Power limits for SSDs have been reached or are quickly being approached. Free electron devices such as tubes have an efficiency advantage because electrons in the vacuum travel faster than bulk charges in SSDs. Combined SSD devices are prone to burnout and incur penalties due to the need to dissipate heat. TWTs have a 6.7:1 advantage in radiator area ratio. Recent progress in TWT technology has produced a tenfold increase in CW output power, doubled to quadrupled the efficiency, and pushed frequency ranges into the terahertz region, orders of magnitude beyond the SSD cutoff.

Wearable energy-dense and power-dense supercapacitor yarns enabled by scalable graphene-metallic textile composite electrodes.

PubMed

Liu, Libin; Yu, You; Yan, Casey; Li, Kan; Zheng, Zijian

2015-06-11

One-dimensional flexible supercapacitor yarns are of considerable interest for future wearable electronics. The bottleneck in this field is how to develop devices of high energy and power density, by using economically viable materials and scalable fabrication technologies. Here we report a hierarchical graphene-metallic textile composite electrode concept to address this challenge. The hierarchical composite electrodes consist of low-cost graphene sheets immobilized on the surface of Ni-coated cotton yarns, which are fabricated by highly scalable electroless deposition of Ni and electrochemical deposition of graphene on commercial cotton yarns. Remarkably, the volumetric energy density and power density of the all solid-state supercapacitor yarn made of one pair of these composite electrodes are 6.1 mWh cm(-3) and 1,400 mW cm(-3), respectively. In addition, this SC yarn is lightweight, highly flexible, strong, durable in life cycle and bending fatigue tests, and integratable into various wearable electronic devices.

Wearable energy-dense and power-dense supercapacitor yarns enabled by scalable graphene–metallic textile composite electrodes

PubMed Central

Liu, Libin; Yu, You; Yan, Casey; Li, Kan; Zheng, Zijian

2015-01-01

One-dimensional flexible supercapacitor yarns are of considerable interest for future wearable electronics. The bottleneck in this field is how to develop devices of high energy and power density, by using economically viable materials and scalable fabrication technologies. Here we report a hierarchical graphene–metallic textile composite electrode concept to address this challenge. The hierarchical composite electrodes consist of low-cost graphene sheets immobilized on the surface of Ni-coated cotton yarns, which are fabricated by highly scalable electroless deposition of Ni and electrochemical deposition of graphene on commercial cotton yarns. Remarkably, the volumetric energy density and power density of the all solid-state supercapacitor yarn made of one pair of these composite electrodes are 6.1 mWh cm−3 and 1,400 mW cm−3, respectively. In addition, this SC yarn is lightweight, highly flexible, strong, durable in life cycle and bending fatigue tests, and integratable into various wearable electronic devices. PMID:26068809

Hot carrier-enhanced interlayer electron-hole pair multiplication in 2D semiconductor heterostructure photocells

NASA Astrophysics Data System (ADS)

Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger K.; Aji, Vivek; Gabor, Nathaniel M.

2017-12-01

Strong electronic interactions can result in novel particle-antiparticle (electron-hole, e-h) pair generation effects, which may be exploited to enhance the photoresponse of nanoscale optoelectronic devices. Highly efficient e-h pair multiplication has been demonstrated in several important nanoscale systems, including nanocrystal quantum dots, carbon nanotubes and graphene. The small Fermi velocity and nonlocal nature of the effective dielectric screening in ultrathin layers of transition-metal dichalcogenides (TMDs) indicates that e-h interactions are very strong, so high-efficiency generation of e-h pairs from hot electrons is expected. However, such e-h pair multiplication has not been observed in 2D TMD devices. Here, we report the highly efficient multiplication of interlayer e-h pairs in 2D semiconductor heterostructure photocells. Electronic transport measurements of the interlayer I-VSD characteristics indicate that layer-indirect e-h pairs are generated by hot-electron impact excitation at temperatures near T = 300 K. By exploiting this highly efficient interlayer e-h pair multiplication process, we demonstrate near-infrared optoelectronic devices that exhibit 350% enhancement of the optoelectronic responsivity at microwatt power levels. Our findings, which demonstrate efficient carrier multiplication in TMD-based optoelectronic devices, make 2D semiconductor heterostructures viable for a new class of ultra-efficient photodetectors based on layer-indirect e-h excitations.

Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zheyu; Dix, Jeffery; Wang, Fei Fred

This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiCmore » MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.« less

Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

DOE PAGES

Zhang, Zheyu; Dix, Jeffery; Wang, Fei Fred; ...

2017-01-19

This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiCmore » MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.« less

Stretchable Biofuel Cells as Wearable Textile-based Self-Powered Sensors.

PubMed

Jeerapan, Itthipon; Sempionatto, Juliane R; Pavinatto, Adriana; You, Jung-Min; Wang, Joseph

2016-12-21

Highly stretchable textile-based biofuel cells (BFCs), acting as effective self-powered sensors, have been fabricated using screen-printing of customized stress-enduring inks. Due to synergistic effects of nanomaterial-based engineered inks and the serpentine designs, these printable bioelectronic devices endure severe mechanical deformations, e.g., stretching, indentation, or torsional twisting. Glucose and lactate BFCs with the single enzyme and membrane-free configurations generated the maximum power density of 160 and 250 µW cm -2 with the open circuit voltages of 0.44 and 0.46 V, respectively. The textile-BFCs were able to withstand repeated severe mechanical deformations with minimal impact on its structural integrity, as was indicated from their stable power output after 100 cycles of 100% stretching. By providing power signals proportional to the sweat fuel concentration, these stretchable devices act as highly selective and stable self-powered textile sensors. Applicability to sock-based BFC and self-powered biosensor and mechanically compliant operations was demonstrated on human subjects. These stretchable skin-worn "scavenge-sense-display" devices are expected to contribute to the development of skin-worn energy harvesting systems, advanced non-invasive self-powered sensors and wearable electronics on a stretchable garment.

Start Up Application Concerns with Field Programmable Gate Arrays (FPGAs)

NASA Technical Reports Server (NTRS)

Katz, Richard B.

1999-01-01

This note is being published to improve the visibility of this subject, as we continue to see problems surface in designs, as well as to add additional information to the previously published note for design engineers. The original application note focused on designing systems with no single point failures using Actel Field Programmable Gate Arrays (FPGAs) for critical applications. Included in that note were the basic principles of operation of the Actel FPGA and a discussion of potential single-point failures. The note also discussed the issue of startup transients for that class of device. It is unfortunate that we continue to see some design problems using these devices. This note will focus on the startup properties of certain electronic components, in general, and current Actel FPGAs, in particular. Devices that are "power-on friendly" are currently being developed by Actel, as a variant of the new SX series of FPGAs. In the ideal world, electronic components would behave much differently than they do in the real world, The chain, of course, starts with the power supply. Ideally, the voltage will immediately rise to a stable V(sub cc) level, of course, it does not. Aside from practical design considerations, inrush current limits of certain capacitors must be observed and the power supply's output may be intentionally slew rate limited to prevent a large current spike on the system power bus. In any event, power supply rise time may range from less than I msec to 100 msec or more.

Safe Lock

NASA Technical Reports Server (NTRS)

1991-01-01

The Model 1150 electronic spring latch, which provides controlled and timed access to a safe, was developed by Burnett Electronics Lab, Inc., San Diego, CA, and is marketed by KeyOne, Inc. also of San Diego. The Model 1150 is a spinoff from a spinoff. The original spinoff, the acoustic pinger, is an underwater transmitting device developed by Langley Research Center and the Navy for location and recovery of sounding rocket research payloads from the ocean. Long functioning life is a vital requirement for both the acoustic pinger and the Model 1150. The electronic spring latch employs the pinger power management technology to get long life out of the battery power source.

Pursuing two-dimensional nanomaterials for flexible lithium-ion batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Bin; Zhang, Ji-Guang; Shen, Guozhen

2016-02-01

Stretchable/flexible electronics provide a foundation for various emerging applications that beyond the scope of conventional wafer/circuit board technologies due to their unique features that can satisfy a broad range of applications such as wearable devices. Stretchable electronic and optoelectronics devices require the bendable/wearable rechargeable Li-ion batteries, thus these devices can operate without limitation of external powers. Various two-dimensional (2D) nanomaterials are of great interest in flexible energy storage devices, especially Li-ion batteries. This is because 2D materials exhibit much more exposed surface area supplying abundant Li-insertion channels and shortened paths for fast lithium ion diffusion. Here, we will review themore » recent developments on the flexible Li-ion batteries based on two dimensional nanomaterials. These researches demonstrated advancements in flexible electronics by incorporating various 2D nanomaterials into bendable batteries to achieve high electrochemical performance, excellent mechanical flexibility as well as electrical stability under stretching/bending conditions.« less

Tuning open-circuit voltage in organic solar cells by magnesium modified Alq3

PubMed Central

Chou, Chi-Ta; Lin, Chien-Hung; Wu, Meng-Hsiu; Cheng, Tzu-Wei; Lee, Jiun-Haw; Liu, Chin-Hsin J.; Tai, Yian; Chattopadhyay, Surojit; Wang, Juen-Kai; Chen, Kuei-Hsien; Chen, Li-Chyong

2011-01-01

The low molecular weight tris-(8-hydroxyquinoline) aluminum (Alq3) has been incorporated with magnesium (Mg) that altered the nature of its opto-electronic characteristics. The lowering of the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) in Mg:Alq3, compared to pure Alq3, creates a stronger field (exceeding the exciton binding energy) at the donor-acceptor junction to dissociate the photo-generated exciton and also provides a low barrier for electron transport across the device. In an electron-only device (described in the text), a current enhancement in excess of 103, with respect to pure Alq3, could be observed at 10 V applied bias. Optimized Mg:Alq3 layer, when introduced in the photovoltaic device, improves the power conversion efficiencies significantly to 0.15% compared to the pure Alq3 device. The improvement in the photovoltaic performance has been attributed to the superior exciton dissociation and carrier transport. PMID:22087050

Electronic system for high power load control. [solar arrays

NASA Technical Reports Server (NTRS)

Miller, E. L. (Inventor)

1980-01-01

Parallel current paths are divided into two groups, with control devices in the current paths of one group each having a current limiting resistor, and the control devices in the other group each having no limiting resistor, so that when the control devices of the second group are turned fully on, a short circuit is achieved by the arrangement of parallel current paths. Separate but coordinated control signals are provided to turn on the control devices of the first group and increase their conduction toward saturation as a function of control input, and when fully on, or shortly before, to turn on the control devices of the second group and increase their conduction toward saturation as a function of the control input as that input continues to increase. Electronic means may be used to generate signals. The system may be used for 1-V characteristic measurements of solar arrays as well as for other load control purposes.

An overview of silicon carbide device technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Matus, Lawrence G.

1992-01-01

Recent progress in the development of silicon carbide (SiC) as a semiconductor is briefly reviewed. This material shows great promise towards providing electronic devices that can operate under the high-temperature, high-radiation, and/or high-power conditions where current semiconductor technologies fail. High quality single crystal wafers have become available, and techniques for growing high quality epilayers have been refined to the point where experimental SiC devices and circuits can be developed. The prototype diodes and transistors that have been produced to date show encouraging characteristics, but by the same token they also exhibit some device-related problems that are not unlike those faced in the early days of silicon technology development. Although these problems will not prevent the implementation of some useful circuits, the performance and operating regime of SiC electronics will be limited until these device-related issues are solved.

Formate: an Energy Storage and Transport Bridge between Carbon Dioxide and a Formate Fuel Cell in a Single Device.

PubMed

Vo, Tracy; Purohit, Krutarth; Nguyen, Christopher; Biggs, Brenna; Mayoral, Salvador; Haan, John L

2015-11-01

We demonstrate the first device to our knowledge that uses a solar panel to power the electrochemical reduction of dissolved carbon dioxide (carbonate) into formate that is then used in the same device to operate a direct formate fuel cell (DFFC). The electrochemical reduction of carbonate is carried out on a Sn electrode in a reservoir that maintains a constant carbon balance between carbonate and formate. The electron-rich formate species is converted by the DFFC into electrical energy through electron release. The product of DFFC operation is the electron-deficient carbonate species that diffuses back to the reservoir bulk. It is possible to continuously charge the device using alternative energy (e.g., solar) to convert carbonate to formate for on-demand use in the DFFC; the intermittent nature of alternative energy makes this an attractive design. In this work, we demonstrate a proof-of-concept device that performs reduction of carbonate, storage of formate, and operation of a DFFC. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Control voltage and power fluctuations when connecting wind farms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berinde, Ioan, E-mail: ioan-berinde@yahoo.com; Bălan, Horia, E-mail: hbalan@mail.utcluj.ro; Oros, Teodora Susana, E-mail: teodoraoros-87@yahoo.com

2015-12-23

Voltage, frequency, active power and reactive power are very important parameters in terms of power quality. These parameters are followed when connecting any power plant, the more the connection of wind farms. Connecting wind farms to the electricity system must not cause interference outside the limits set by regulations. Modern solutions for fast and automatic voltage control and power fluctuations using electronic control systems of reactive power flows. FACTS (Flexible Alternating Current Transmision System) systems, established on the basis of power electronic circuits ensure control of electrical status quantities to achieve the necessary transfer of power to the power grid.more » FACTS devices can quickly control parameters and sizes of state power lines, such as impedance line voltages and phase angles of the voltages of the two ends of the line. Their use can lead to improvement in power system operation by increasing the transmission capacity of power lines, power flow control lines, improved static and transient stability reserve.« less

Evaluation of Silicon-on-Insulator HTOP-01 Operational Amplifier for Wide Temperature Operation

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Electronics capable of operation under extreme temperatures are required in many of NASA space exploration missions. Aerospace and military applications, as well as some terrestrial industries constitute environments where electronic systems are anticipated to be exposed to extreme temperatures and wide-range thermal swings. Electronics that are able to withstand and operate efficiently in such harsh environments would simplify, if not eliminate, traditional thermal control elements and their associated structures for proper ambient operation. As a result, overall system mass would be reduced, design would be simplified, and reliability would be improved. Electronic parts that are built utilizing silicon-on-insulator (SOI) technology are known to offer better radiation-tolerance compared to their conventional silicon counterparts, provide faster switching, and consume less power. They also exhibit reduced leakage current and, thus, they are often tailored for high temperature operation. These attributes make SOI-based devices suitable for use in harsh environments where extreme temperatures and wide thermal swings are anticipated. A new operational amplifier, based on silicon-on-insulator technology and geared for high temperature well-logging applications, was recently introduced by Honeywell Corporation. This HTOP-01 dual precision operational amplifier is a low power device, operates on a single supply, and has an internal oscillator and an external clocking option [1]. It is rated for operation from -55 C to +225 C with a maximum output current capability of 50 mA. The amplifier chip is designed as a 14-pin, hermetically-sealed device in a ceramic package. Table I shows some of the device manufacturer s specifications.

21 CFR 870.3600 - External pacemaker pulse generator.

Code of Federal Regulations, 2010 CFR

2010-04-01

... power supply and electronic circuits that produce a periodic electrical pulse to stimulate the heart. This device, which is used outside the body, is used as a temporary substitute for the heart's...

21 CFR 870.3600 - External pacemaker pulse generator.

Code of Federal Regulations, 2013 CFR

2013-04-01

... power supply and electronic circuits that produce a periodic electrical pulse to stimulate the heart. This device, which is used outside the body, is used as a temporary substitute for the heart's...

21 CFR 870.3600 - External pacemaker pulse generator.

Code of Federal Regulations, 2014 CFR

2014-04-01

... power supply and electronic circuits that produce a periodic electrical pulse to stimulate the heart. This device, which is used outside the body, is used as a temporary substitute for the heart's...

21 CFR 870.3600 - External pacemaker pulse generator.

Code of Federal Regulations, 2012 CFR

2012-04-01

... power supply and electronic circuits that produce a periodic electrical pulse to stimulate the heart. This device, which is used outside the body, is used as a temporary substitute for the heart's...

21 CFR 870.3600 - External pacemaker pulse generator.

Code of Federal Regulations, 2011 CFR

2011-04-01

... power supply and electronic circuits that produce a periodic electrical pulse to stimulate the heart. This device, which is used outside the body, is used as a temporary substitute for the heart's...

Active high-power RF switch and pulse compression system

DOEpatents

Tantawi, Sami G.; Ruth, Ronald D.; Zolotorev, Max

1998-01-01

A high-power RF switching device employs a semiconductor wafer positioned in the third port of a three-port RF device. A controllable source of directed energy, such as a suitable laser or electron beam, is aimed at the semiconductor material. When the source is turned on, the energy incident on the wafer induces an electron-hole plasma layer on the wafer, changing the wafer's dielectric constant, turning the third port into a termination for incident RF signals, and. causing all incident RF signals to be reflected from the surface of the wafer. The propagation constant of RF signals through port 3, therefore, can be changed by controlling the beam. By making the RF coupling to the third port as small as necessary, one can reduce the peak electric field on the unexcited silicon surface for any level of input power from port 1, thereby reducing risk of damaging the wafer by RF with high peak power. The switch is useful to the construction of an improved pulse compression system to boost the peak power of microwave tubes driving linear accelerators. In this application, the high-power RF switch is placed at the coupling iris between the charging waveguide and the resonant storage line of a pulse compression system. This optically controlled high power RF pulse compression system can handle hundreds of Megawatts of power at X-band.

The merger of electrochemistry and molecular electronics.

PubMed

McCreery, Richard L

2012-02-01

Molecular Electronics has the potential to greatly enhance existing silicon-based microelectronics to realize new functions, higher device density, lower power consumption, and lower cost. Although the investigation of electron transport through single molecules and molecular monolayers in "molecular junctions" is a recent development, many of the relevant concepts and phenomena are derived from electrochemistry, as practiced for the past several decades. The past 10+ years have seen an explosion of research activity directed toward how the structure of molecules affects electron transport in molecular junctions, with the ultimate objective of "rational design" of molecular components with new electronic functions, such as chemical sensing, interactions with light, and low-cost, low-power consumer electronics. In order to achieve these scientifically and commercially important objectives, the factors controlling charge transport in molecules "connected" to conducting contacts must be understood, and methods for massively parallel manufacturing of molecular circuits must be developed. This Personal Account describes the development of reproducible and robust molecular electronic devices, starting with modified electrodes used in electrochemistry and progressing to manufacturable molecular junctions. Although the field faced some early difficulties in reliability and characterization, the pieces are now in place for rapid advances in understanding charge transport at the molecular level. Inherent in the field of Molecular Electronics are many electrochemical concepts, including tunneling, redox exchange, activated electron transfer, and electron coupling between molecules and conducting contacts. Copyright © 2012 The Japan Chemical Journal Forum and Wiley Periodicals, Inc.

Specifics of Pulsed Arc Welding Power Supply Performance Based On A Transistor Switch

NASA Astrophysics Data System (ADS)

Krampit, N. Yu; Kust, T. S.; Krampit, M. A.

2016-08-01

Specifics of designing a pulsed arc welding power supply device are presented in the paper. Electronic components for managing large current was analyzed. Strengths and shortcomings of power supply circuits based on thyristor, bipolar transistor and MOSFET are outlined. As a base unit for pulsed arc welding was chosen MOSFET transistor, which is easy to manage. Measures to protect a transistor are given. As for the transistor control device is a microcontroller Arduino which has a low cost and adequate performance of the work. Bead transfer principle is to change the voltage on the arc in the formation of beads on the wire end. Microcontroller controls transistor when the arc voltage reaches the threshold voltage. Thus there is a separation and transfer of beads without splashing. Control strategies tested on a real device and presented. The error in the operation of the device is less than 25 us, it can be used controlling drop transfer at high frequencies (up to 1300 Hz).

Flexible, highly efficient all-polymer solar cells

PubMed Central

Kim, Taesu; Kim, Jae-Han; Kang, Tae Eui; Lee, Changyeon; Kang, Hyunbum; Shin, Minkwan; Wang, Cheng; Ma, Biwu; Jeong, Unyong; Kim, Taek-Soo; Kim, Bumjoon J.

2015-01-01

All-polymer solar cells have shown great potential as flexible and portable power generators. These devices should offer good mechanical endurance with high power-conversion efficiency for viability in commercial applications. In this work, we develop highly efficient and mechanically robust all-polymer solar cells that are based on the PBDTTTPD polymer donor and the P(NDI2HD-T) polymer acceptor. These systems exhibit high power-conversion efficiency of 6.64%. Also, the proposed all-polymer solar cells have even better performance than the control polymer-fullerene devices with phenyl-C61-butyric acid methyl ester (PCBM) as the electron acceptor (6.12%). More importantly, our all-polymer solar cells exhibit dramatically enhanced strength and flexibility compared with polymer/PCBM devices, with 60- and 470-fold improvements in elongation at break and toughness, respectively. The superior mechanical properties of all-polymer solar cells afford greater tolerance to severe deformations than conventional polymer-fullerene solar cells, making them much better candidates for applications in flexible and portable devices. PMID:26449658

Electron Heating and Acceleration from High Amplitude Driven Alfvén Waves in the LAPD

NASA Astrophysics Data System (ADS)

Auerbach, David; Carter, Troy; Brugman, Brian

2006-10-01

High amplitude (δB/B ˜1 %) shear Alfvén waves are generated in the Large Plasma Device Upgrade (LAPD) at UCLA, and elevated electron temperatures and high energy electrons are observed using triple probes and Langmuir current traces. The Poynting flux of the observed waves is calculated, and wave power is compared to estimates of power input required to cause the observed heating. Theoretical calculations of power transfer from wave to plasma due to Landau damping and collisional heating are also presented and compared to experimental measurements. Heating by antenna near field effects is also being explored. The density and potential structures of these waves are explored using interferometer and triple probe measurements. Applications to Auroral generation and plasma heating are discussed.

Collective Thomson scattering of a high power electron cyclotron resonance heating beam in LHD (invited).

PubMed

Kubo, S; Nishiura, M; Tanaka, K; Shimozuma, T; Yoshimura, Y; Igami, H; Takahash, H; Mutoh, T; Tamura, N; Tatematsu, Y; Saito, T; Notake, T; Korsholm, S B; Meo, F; Nielsen, S K; Salewski, M; Stejner, M

2010-10-01

Collective Thomson scattering (CTS) system has been constructed at LHD making use of the high power electron cyclotron resonance heating (ECRH) system in Large Helical Device (LHD). The necessary features for CTS, high power probing beams and receiving beams, both with well defined Gaussian profile and with the fine controllability, are endowed in the ECRH system. The 32 channel radiometer with sharp notch filter at the front end is attached to the ECRH system transmission line as a CTS receiver. The validation of the CTS signal is performed by scanning the scattering volume. A new method to separate the CTS signal from background electron cyclotron emission is developed and applied to derive the bulk and high energy ion components for several combinations of neutral beam heated plasmas.

Electro-Thermal Transient Simulation of Silicon Carbide Power Mosfet

DTIC Science & Technology

2013-06-01

ionization rate than electron in silicon carbide , the breakdown voltage almost remains constant even at elevated temperatures . This is due to the positive... temperature coefficient of holes in case of silicon carbide as discussed in [7, 8]. The higher ambient temperature influences the leakage current...in the RLC ring down circuit . E. Power Dissipation and Lattice Temperature The power dissipation for any switching device is dependent on the

Fabric-based integrated energy devices for wearable activity monitors.

PubMed

Jung, Sungmook; Lee, Jongsu; Hyeon, Taeghwan; Lee, Minbaek; Kim, Dae-Hyeong

2014-09-01

A wearable fabric-based integrated power-supply system that generates energy triboelectrically using human activity and stores the generated energy in an integrated supercapacitor is developed. This system can be utilized as either a self-powered activity monitor or as a power supply for external wearable sensors. These demonstrations give new insights for the research of wearable electronics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Design, construction, and measurement of a large solar powered thermoacoustic cooler

NASA Astrophysics Data System (ADS)

Chen, Reh-Lin

2001-07-01

A device based on harnessing concentrated solar power in combination with using thermoacoustic principles has been built, instrumented, and tested. Its acoustic power is generated by solar radiation and is subsequently used to pump heat from external loads. The direct conversion between thermal and mechanical energy without going through any electronic stage makes the mechanism simple. Construction of the solar collector is also rather unsophisticated. It was converted from a 10-ft satellite dish with aluminized Mylar glued on the surface. The thermoacoustic device was mounted on the dish with its engine's hot side positioned near the focus of the parabolic dish, about 1 meter above the center of the dish. A 2-dimensional solar tracking system was built, using two servo motors to position the dish at pre-calculated coordinates. The solar powered thermoacoustic cooler is intended to be used where solar power is abundant and electricity may not be available or reliable. The cooler provides cooling during solar availability. Cooling can be maintained by the latent heat of ice when solar power is unattainable. The device has achieved cooling although compromised by gas leakage and thermal losses and was not able to provide temperatures low enough to freeze water. Improvements of the device are expected through modifications suggested herein.

Energy-harvesting at the Nanoscale

NASA Astrophysics Data System (ADS)

Jordan, Andrew; Sothmann, Björn; Sánchez, Rafael; Büttiker, Markus

2013-03-01

Energy harvesting is the process by which energy is taken from the environment and transformed to provide power for electronics. Specifically, the conversion of thermal energy into electrical power, or thermoelectrics, can play a crucial role in future developments of alternative sources of energy. Unfortunately, present thermoelectrics have low efficiency. Therefore, an important task in condensed matter physics is to find new ways to harvest ambient thermal energy, particularly at the smallest length scales where electronics operate. To achieve this goal, there is on one hand the miniaturizing of electrical devices, and on the other, the maximization of either efficiency or power the devices produce. We will present the theory of nano heat engines able to efficiently convert heat into electrical power. We propose a resonant tunneling quantum dot engine that can be operated either in the Carnot efficient mode, or maximal power mode. The ability to scale the power by putting many such engines in a ``Swiss cheese sandwich'' geometry gives a paradigmatic system for harvesting thermal energy at the nanoscale. This work was supported by the US NSF Grant No. DMR-0844899, the Swiss NSF, the NCCR MaNEP and QSIT, the European STREP project Nanopower, the CSIC and FSE JAE-Doc program, the Spanish MAT2011-24331 and the ITN Grant 234970 (EU)

Extended papers selected from ESSDERC 2015

NASA Astrophysics Data System (ADS)

Grasser, Tibor; Schmitz, Jurriaan; Lemme, Max C.

2016-11-01

This special issue of Solid State Electronics includes 28 papers which have been carefully selected from the best presentations given at the 45th European Solid-State Device Research Conference (ESSDERC 2015) held from September 14-18, 2015 in Graz, Austria. These papers cover a wide range of topics related to the research on solid-state devices. These topics are used also to organize the conference submissions and presentations into 7 tracks: CMOS Processes, Devices and Integration; Opto-, Power- and Microwave Devices; Modeling & Simulation; Characterization, Reliability & Yield; Advanced & Emerging Memories; MEMS, Sensors & Display Technologies; Emerging Non-CMOS Devices & Technologies.

Superlattice-based thin-film thermoelectric modules with high cooling fluxes

PubMed Central

Bulman, Gary; Barletta, Phil; Lewis, Jay; Baldasaro, Nicholas; Manno, Michael; Bar-Cohen, Avram; Yang, Bao

2016-01-01

In present-day high-performance electronic components, the generated heat loads result in unacceptably high junction temperatures and reduced component lifetimes. Thermoelectric modules can, in principle, enhance heat removal and reduce the temperatures of such electronic devices. However, state-of-the-art bulk thermoelectric modules have a maximum cooling flux qmax of only about 10 W cm−2, while state-of-the art commercial thin-film modules have a qmax <100 W cm−2. Such flux values are insufficient for thermal management of modern high-power devices. Here we show that cooling fluxes of 258 W cm−2 can be achieved in thin-film Bi2Te3-based superlattice thermoelectric modules. These devices utilize a p-type Sb2Te3/Bi2Te3 superlattice and n-type δ-doped Bi2Te3−xSex, both of which are grown heteroepitaxially using metalorganic chemical vapour deposition. We anticipate that the demonstration of these high-cooling-flux modules will have far-reaching impacts in diverse applications, such as advanced computer processors, radio-frequency power devices, quantum cascade lasers and DNA micro-arrays. PMID:26757675

Real-Time Load-Side Control of Electric Power Systems

NASA Astrophysics Data System (ADS)

Zhao, Changhong

Two trends are emerging from modern electric power systems: the growth of renewable (e.g., solar and wind) generation, and the integration of information technologies and advanced power electronics. The former introduces large, rapid, and random fluctuations in power supply, demand, frequency, and voltage, which become a major challenge for real-time operation of power systems. The latter creates a tremendous number of controllable intelligent endpoints such as smart buildings and appliances, electric vehicles, energy storage devices, and power electronic devices that can sense, compute, communicate, and actuate. Most of these endpoints are distributed on the load side of power systems, in contrast to traditional control resources such as centralized bulk generators. This thesis focuses on controlling power systems in real time, using these load side resources. Specifically, it studies two problems. (1) Distributed load-side frequency control: We establish a mathematical framework to design distributed frequency control algorithms for flexible electric loads. In this framework, we formulate a category of optimization problems, called optimal load control (OLC), to incorporate the goals of frequency control, such as balancing power supply and demand, restoring frequency to its nominal value, restoring inter-area power flows, etc., in a way that minimizes total disutility for the loads to participate in frequency control by deviating from their nominal power usage. By exploiting distributed algorithms to solve OLC and analyzing convergence of these algorithms, we design distributed load-side controllers and prove stability of closed-loop power systems governed by these controllers. This general framework is adapted and applied to different types of power systems described by different models, or to achieve different levels of control goals under different operation scenarios. We first consider a dynamically coherent power system which can be equivalently modeled with a single synchronous machine. We then extend our framework to a multi-machine power network, where we consider primary and secondary frequency controls, linear and nonlinear power flow models, and the interactions between generator dynamics and load control. (2) Two-timescale voltage control: The voltage of a power distribution system must be maintained closely around its nominal value in real time, even in the presence of highly volatile power supply or demand. For this purpose, we jointly control two types of reactive power sources: a capacitor operating at a slow timescale, and a power electronic device, such as a smart inverter or a D-STATCOM, operating at a fast timescale. Their control actions are solved from optimal power flow problems at two timescales. Specifically, the slow-timescale problem is a chance-constrained optimization, which minimizes power loss and regulates the voltage at the current time instant while limiting the probability of future voltage violations due to stochastic changes in power supply or demand. This control framework forms the basis of an optimal sizing problem, which determines the installation capacities of the control devices by minimizing the sum of power loss and capital cost. We develop computationally efficient heuristics to solve the optimal sizing problem and implement real-time control. Numerical experiments show that the proposed sizing and control schemes significantly improve the reliability of voltage control with a moderate increase in cost.

Safe Direct Current Stimulator design for reduced power consumption and increased reliability.

PubMed

Fridman, Gene

2017-07-01

Current state of the art neural prosthetics, such as cochlear implants, spinal cord stimulators, and deep brain stimulators use implantable pulse generators (IPGs) to excite neural activity. Inhibition of neural firing is typically indirect and requires excitation of neurons that then have inhibitory projections downstream. Safe Direct Current Stimulator (SDCS) technology is designed to convert electronic pulses delivered to electrodes embedded within an implantable device to ionic direct current (iDC) at the output of the device. iDC from the device can then control neural extracellular potential with the intent of being able to not only excite, but also inhibit and sensitize neurons, thereby greatly expanding the possible applications of neuromodulation therapies and neural interface mechanisms. While the potential applications and proof of concept of this device have been the focus of previous work, the published descriptions of this technology leave significant room for power and reliability optimization. We describe and model a novel device construction designed to reduce power consumption by a factor of 12 and to improve its reliability by a factor of 8.

Tools and techniques for estimating high intensity RF effects

NASA Astrophysics Data System (ADS)

Zacharias, Richard L.; Pennock, Steve T.; Poggio, Andrew J.; Ray, Scott L.

1992-01-01

Tools and techniques for estimating and measuring coupling and component disturbance for avionics and electronic controls are described. A finite-difference-time-domain (FD-TD) modeling code, TSAR, used to predict coupling is described. This code can quickly generate a mesh model to represent the test object. Some recent applications as well as the advantages and limitations of using such a code are described. Facilities and techniques for making low-power coupling measurements and for making direct injection test measurements of device disturbance are also described. Some scaling laws for coupling and device effects are presented. A method for extrapolating these low-power test results to high-power full-system effects are presented.

Plasma physics and related challenges of millimeter-wave-to-terahertz and high power microwave generationa)

NASA Astrophysics Data System (ADS)

Booske, John H.

2008-05-01

Homeland security and military defense technology considerations have stimulated intense interest in mobile, high power sources of millimeter-wave (mmw) to terahertz (THz) regime electromagnetic radiation, from 0.1 to 10THz. While vacuum electronic sources are a natural choice for high power, the challenges have yet to be completely met for applications including noninvasive sensing of concealed weapons and dangerous agents, high-data-rate communications, high resolution radar, next generation acceleration drivers, and analysis of fluids and condensed matter. The compact size requirements for many of these high frequency sources require miniscule, microfabricated slow wave circuits. This necessitates electron beams with tiny transverse dimensions and potentially very high current densities for adequate gain. Thus, an emerging family of microfabricated, vacuum electronic devices share many of the same plasma physics challenges that are currently confronting "classic" high power microwave (HPM) generators including long-life bright electron beam sources, intense beam transport, parasitic mode excitation, energetic electron interaction with surfaces, and rf air breakdown at output windows. The contemporary plasma physics and other related issues of compact, high power mmw-to-THz sources are compared and contrasted to those of HPM generation, and future research challenges and opportunities are discussed.

High power coaxial ubitron

NASA Astrophysics Data System (ADS)

Balkcum, Adam J.

In the ubitron, also known as the free electron laser, high power coherent radiation is generated from the interaction of an undulating electron beam with an electromagnetic signal and a static periodic magnetic wiggler field. These devices have experimentally produced high power spanning the microwave to x-ray regimes. Potential applications range from microwave radar to the study of solid state material properties. In this dissertation, the efficient production of high power microwaves (HPM) is investigated for a ubitron employing a coaxial circuit and wiggler. Designs for the particular applications of an advanced high gradient linear accelerator driver and a directed energy source are presented. The coaxial ubitron is inherently suited for the production of HPM. It utilizes an annular electron beam to drive the low loss, RF breakdown resistant TE01 mode of a large coaxial circuit. The device's large cross-sectional area greatly reduces RF wall heat loading and the current density loading at the cathode required to produce the moderate energy (500 keV) but high current (1-10 kA) annular electron beam. Focusing and wiggling of the beam is achieved using coaxial annular periodic permanent magnet (PPM) stacks without a solenoidal guide magnetic field. This wiggler configuration is compact, efficient and can propagate the multi-kiloampere electron beams required for many HPM applications. The coaxial PPM ubitron in a traveling wave amplifier, cavity oscillator and klystron configuration is investigated using linear theory and simulation codes. A condition for the dc electron beam stability in the coaxial wiggler is derived and verified using the 2-1/2 dimensional particle-in-cell code, MAGIC. New linear theories for the cavity start-oscillation current and gain in a klystron are derived. A self-consistent nonlinear theory for the ubitron-TWT and a new nonlinear theory for the ubitron oscillator are presented. These form the basis for simulation codes which, along with MAGIC, are used to design a representative 200 MW, 40% efficient, X-band amplifier for linear accelerators and a 1 GW, 21% efficient, S-band oscillator for directed energy. The technique of axial mode profiling in the ubitron cavity oscillator is also proposed and shown to increase the simulated interaction efficiency to 46%. These devices are realizable and their experimental implementation, including electron beam formation and spurious mode suppression techniques, is discussed.

Spaceborne electronic imaging systems

NASA Technical Reports Server (NTRS)

1971-01-01

Criteria and recommended practices for the design of the spaceborne elements of electronic imaging systems are presented. A spaceborne electronic imaging system is defined as a device that collects energy in some portion of the electromagnetic spectrum with detector(s) whose direct output is an electrical signal that can be processed (using direct transmission or delayed transmission after recording) to form a pictorial image. This definition encompasses both image tube systems and scanning point-detector systems. The intent was to collect the design experience and recommended practice of the several systems possessing the common denominator of acquiring images from space electronically and to maintain the system viewpoint rather than pursuing specialization in devices. The devices may be markedly different physically, but each was designed to provide a particular type of image within particular limitations. Performance parameters which determine the type of system selected for a given mission and which influence the design include: Sensitivity, Resolution, Dynamic range, Spectral response, Frame rate/bandwidth, Optics compatibility, Image motion, Radiation resistance, Size, Weight, Power, and Reliability.

Reliability of III-V electronic devices -- the defects that cause the trouble

NASA Astrophysics Data System (ADS)

Pantelides, Sokrates T.

2012-02-01

Degradation of electronic devices by hot electrons is universally attributed to the generation of defects, but the mechanisms for defect generation and the specific nature of the pertinent defects are not known for most systems. Here we describe three recent case studies [1] in III-V high-electron-mobility transistors that illustrate the power of combining density functional calculations and experimental data to identify the pertinent defects and associated degradation mechanisms. In all cases, benign pre-existing defects are either depassivated (irreversible degradation) or transformed to a metastable state (reversible degradation). This work was done in collaboration with R.D. Schrimpf, D.M. Fleetwood, Y. Puzyrev, X. Shen, T. Roy, S. DasGupta, and B.R. Tuttle. Devices were provided by D.F. Brown, J. Speck and U. Mishra, and by J. Bergman and B. Brar. [4pt] [1] Y. S. Puzyrev et al., Appl. Phys. Lett. 96, 053505 (2010); T. Roy et al., Appl. Phys. Lett. 96, 133503 (2010); X. Shen et al., J. Appl. Phys. 108, 114505 (2010).

Smart Technology in Lung Disease Clinical Trials.

PubMed

Geller, Nancy L; Kim, Dong-Yun; Tian, Xin

2016-01-01

This article describes the use of smart technology by investigators and patients to facilitate lung disease clinical trials and make them less costly and more efficient. By "smart technology" we include various electronic media, such as computer databases, the Internet, and mobile devices. We first describe the use of electronic health records for identifying potential subjects and then discuss electronic informed consent. We give several examples of using the Internet and mobile technology in clinical trials. Interventions have been delivered via the World Wide Web or via mobile devices, and both have been used to collect outcome data. We discuss examples of new electronic devices that recently have been introduced to collect health data. While use of smart technology in clinical trials is an exciting development, comparison with similar interventions applied in a conventional manner is still in its infancy. We discuss advantages and disadvantages of using this omnipresent, powerful tool in clinical trials, as well as directions for future research. Published by Elsevier Inc.

Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions.

PubMed

Barrett, N; Gottlob, D M; Mathieu, C; Lubin, C; Passicousset, J; Renault, O; Martinez, E

2016-05-01

Significant progress in the understanding of surfaces and interfaces of materials for new technologies requires operando studies, i.e., measurement of chemical, electronic, and magnetic properties under external stimulus (such as mechanical strain, optical illumination, or electric fields) applied in situ in order to approach real operating conditions. Electron microscopy attracts much interest, thanks to its ability to determine semiconductor doping at various scales in devices. Spectroscopic photoelectron emission microscopy (PEEM) is particularly powerful since it combines high spatial and energy resolution, allowing a comprehensive analysis of local work function, chemistry, and electronic structure using secondary, core level, and valence band electrons, respectively. Here we present the first operando spectroscopic PEEM study of a planar Si p-n junction under forward and reverse bias. The method can be used to characterize a vast range of materials at near device scales such as resistive oxides, conducting bridge memories and domain wall arrays in ferroelectrics photovoltaic devices.

Theory of electromagnetic insertion devices and the corresponding synchrotron radiation

NASA Astrophysics Data System (ADS)

Shumail, Muhammad; Tantawi, Sami G.

2016-07-01

Permanent magnet insertion devices (IDs), which are the main radiation generating devices in synchrotron light sources and free-electron lasers, use a time-invariant but space-periodic magnetic field to wiggle relativistic electrons for short-wavelength radiation generation. Recently, a high power microwave based undulator has also been successfully demonstrated at SLAC which promises the advantage of dynamic tunability of radiation spectrum and polarization. Such IDs employ transverse elecromagnetic fields which are periodic in both space and time to undulate the electrons. In this paper we develop a detailed theory of the principle of electromagnetic IDs from first principles for both linear and circular polarization modes. The electromagnetic equivalent definitions of undulator period (λu) and undulator deflection parameter (K ) are derived. In the inertial frame where the average momentum of the electron is zero, we obtain the figure-8-like trajectory for the linear polarization mode and the circular trajectory for the circular polarization mode. The corresponding radiation spectra and the intensity of harmonics is also calculated.

Design and simulation of a gyroklystron amplifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chauhan, M. S., E-mail: mschauhan.rs.ece@iitbhu.ac.in; Swati, M. V.; Jain, P. K.

2015-03-15

In the present paper, a design methodology of the gyroklystron amplifier has been described and subsequently used for the design of a typically selected 200 kW, Ka-band, four-cavity gyroklystron amplifier. This conceptual device design has been validated through the 3D particle-in-cell (PIC) simulation and nonlinear analysis. Commercially available PIC simulation code “MAGIC” has been used for the electromagnetic study at the different location of the device RF interaction structure for the beam-absent case, i.e., eigenmode study as well as for the electron beam and RF wave interaction behaviour study in the beam present case of the gyroklystron. In addition, a practicalmore » problem of misalignment of the RF cavities with drift tubes within the tube has been also investigated and its effect on device performance studied. The analytical and simulation results confirmed the validity of the gyroklystron device design. The PIC simulation results of the present gyroklystron produced a stable RF output power of ∼218 kW for 0% velocity spread at 35 GHz, with ∼45 dB gain, 37% efficiency, and a bandwidth of 0.3% for a 70 kV, 8.2 A gyrating electron beam. The simulated values of RF output power have been found in agreement with the nonlinear analysis results within ∼5%. Further, the PIC simulation has been extended to study a practical problem of misalignment of the cavities axis and drift tube axis of the gyroklystron amplifier and found that the RF output power is more sensitive to misalignments in comparison to the device bandwidth. The present paper, gyroklystron device design, nonlinear analysis, and 3D PIC simulation using commercially available code had been systematically described would be of use to the high-power gyro-amplifier tube designers and research scientists.« less

Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

DOEpatents

Sherohman, John W [Livermore, CA; Coombs, III, Arthur W.; Yee, Jick Hong [Livermore, CA; Wu, Kuang Jen J [Cupertino, CA

2007-05-29

For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

Conjugated polymers and their use in optoelectronic devices

DOEpatents

Marks, Tobin J.; Guo, Xugang; Zhou, Nanjia; Chang, Robert P. H.; Drees, Martin; Facchetti, Antonio

2016-10-18

The present invention relates to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The present compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The present compounds can have good solubility in common solvents enabling device fabrication via solution processes.